californium tellurides: Topics by WorldWideScience.org

Single-crystalline cadmium telluride anodic oxidation kinetics

... californium 252 fftf reactor mockup power density reactor cores reactor noise

1975-06-08

Optical and Structural Characteristics of Heavily Boron ...

The authors have determined quantitative characteristics for oxide films forming on (111) surfaces of cadmium telluride single crystals on anodic oxidation in 0.1 M KOH: the constants in the Guenterschulze-Betz equation and the film growth constant, which is 2.4 nm/V, from which the activation energy for cadmium telluride electrooxidation has been calculated.

1988-10-10

NASA Center - NASA Technical Reports Server

... Abstract : Cadmium telluride single crystals were subjected to multiple-energy boron ion implants with total doses up to 1.5 x 10 sq cm. ...

1988-05-24

Single-event burnout of power MOSFET devices for satellite application

telluride single crystals. NASA Center: NASA (Unspecified Center) Publication Year: 1966. Document ID: 19670033153. Accession Number: 67A11882 ...

Neutron multiplicities for the transplutonium nuclides

Single-event burnout (SEB) sensitivity was tested for power MOSFET devices, JTMCS081 and JTMCS062, which were made in Institute of Microelectronics, Chinese Academy of Sciences, using californium-252 simulation source. SEB voltage threshold was found for devices under test (DUT). It is helpful for engineers to choose devices used in satellites. (authors)

2008-12-01

Neutron multiplicities for the transplutonium nuclides

This paper continues, with respect to the transplutonium nuclides, earlier efforts to collate and evaluate data from the scientific literature on the prompt neutron multiplicity distribution from fission and its first moment = ..sigma..nuPnu. The isotopes considered here for which P/sub nu/ and or data (or both) were found in the literature are of americium (Am), curium (Cm), berkelium (Bk), californium (Cf), einsteinium (Es), fermium (Fm), and nobelium (No).

1985-01-01

Optical and Structural Characteristics of Heavily Boron-Implanted CdTe.

1985-01-01

NREL preprints for the 23rd IEEE Photovoltaic Specialists Conference

Cadmium telluride single crystals were subjected to multiple-energy boron ion implants with total doses up to 1.5 x 10 sq cm. Various diagnostic techniques were used to assess the structural and electronic properties of these crystals in their as-implante...

1988-01-01

Trace analysis in cadmium telluride by heavy ion induced X-ray emission and by SIMS

Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

1993-05-01

The Effect of Contacts on the Counting Characteristics of Heavily Doped Normal-Type Cadmium-Telluride

The possibilities of using both selective heavy ion induced X-ray emission and secondary ion mass spectroscopy (SIMS), for the identification of impurities present at low concentrations in cadmium telluride are examined. The relative concentrations of the impurities along CdTe crystals have been determined by exciting the X-ray emission of the elements in several slices with Ar and Kr ions and by comparing the relative characteristic X-ray emission yields. As a consequence of the quasimolecular inner shell ionization mechanism in heavy ion-atom collisions, Ar and Kr ions allow a strong excitation of the main impurities seen by SIMS namely Si, Cl and Ge, As, with only a minor contribution of Cd and Te. From the changes of the concentrations of the various impurities along the crystal, informations about segregation coefficients and compensation can be obtained.

2007-02-01

Studies of crystalline CdZnTe radiation detectors and polycrystalline thin film CdTe for X-ray imaging applications

Cadmium telluride single crystals were grown heavily doped with chloride by the THM method. The resulting crystals were n-type with free carrier concentrations of the order of 10('12)/cm at room temperature. Hall effect studies revealed room temperature mobilities between 30 and 350 cm('2)/v-sec and resistivites between 2 x 10('3) and 10('4) ohm-cm. Studies were made of the gamma and alpha counting characteristics of these crystals with metal, metal-semiconductor, and metal-insulator electrodes. It was found that the MIS and MSS structures resulted in significant improvement over the MS structures in counting, signal-to-noise and energy resolution.

1985-01-01

Manufacture and characterization of Pb(1-x)Sn(x)Te photoconductors

The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and gamma-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an aqueous electrolyte. The theory and ...

2001-01-01

Final Report: Planetary Instrument Definition and Design Program (PIDDP) Support Project

A general account of the properties, growing technology and annealing of lead-tin-telluride single crystals is given. Photoconductors were made for the 8 to 14 micron. spectral range and responsivity, detectivity and spectral response measurements showed satisfactory results. Improvement in the growing and annealing of the single crystals promise good performance in the near future.

1984-03-01

Determination and redetermination of the crystal structures of chromium tellurides in the composition range CrTe{sub 1.56}--CrTe{sub 1.67}: Trigonal di-chromium tri-telluride Cr{sub 2}Te{sub 3}, monoclinic penta-chromium octa-telluride Cr{sub 5}Te{sub 8} and the five layer superstructure of trigonal penta-chromium octa-telluride Cr{sub 5}Te{sub 8}

The results of Sandia National Laboratories' participation in the NASA Planetary Definition and Design Program are summarized. Areas reported include the characterization of large area cadmium zinc telluride spectrometers and the application of simulation techniques to the prediction of device performance. Also investigated was the response of mercuric iodide devices in the region from 1 to 100 KeV. A literature study to determine the status or radiation damage measurements in room temperature semiconductor devices is also reported.

1999-03-01

Recent Progress in CdTe and CdZnTe Detectors

Single crystals of trigonal Cr{sub 2}Te{sub 3}, monoclinic Cr{sub 5}Te{sub 8}, and trigonal Cr{sub 5}Te{sub 8} were prepared and the single crystal structures were determined. The structures are related to the NiAs structure type by successive removal of Cr in every second metal atom layer parallel to the c axis. The strong relationship between the structures is evidenced by their very similar X-ray powder patterns. In trigonal Cr{sub 2}Te{sub 3} excess Cr occupies only one of the two possible sites. In monoclinic Cr{sub 5}Te{sub 8} the Cr atoms occupy four different crystallographic sites. The resulting ordering of the vacancies is significantly different from the hitherto reported crystal structures of transition metal chalcogenides M{sub 5}X{sub 8}. A slight increase of the tellurium content leads to an order-disorder transition from the monoclinic to a trigonal phase. The Cr atoms are located on four crystallographically different sites leading to the formation of a five layer ...

1997-03-01

Near-infrared photodetectors based on mercury indium telluride single crystals

Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and Gamma-ray detection. The high atomic number of the materials (Z_{Cd} =48, Z_{Te} =52) gives a high quantum efficiency in comparison with Si. The large band-gap energy (Eg ~ 1.5 eV) allows us to operate the detector at room temperature. However, a considerable amount of charge loss in these detectors produces a reduced energy resolution. This problem arises due to the low mobility and short lifetime of holes. Recently, significant improvements have been achieved to improve the spectral properties based on the advances in the production of crystals and in the design of electrodes. In this overview talk, we summarize (1) advantages and disadvantages of CdTe and CdZnTe semiconductor detectors and (2) technique for improving energy resolution and photopeak efficiencies. Applications of these imaging detectors in ...

2001-01-01

Experimental Evaluation And Simulation Of Multi-pixel Cadmium-zinc-telluride Hard-x-ray Detectors

Attempt to form the Schottky barrier on mercury indium telluride (MIT) surface by deposition transparent conducting electrode (TCE) and avoid the negative results by non-rectifier contacts nature, we have investigated the oxidation of clean MIT surfaces to form an insulating layer to overcome this disadvantage by metal-insulator-semiconductor (MIS) photodetectors designing. Oxide film is grown on the MIT surface by plasma enhance chemical vapor deposition (PECVD). Previously cleaned MIT wafers were dipped and boiled in solution, which consists of mixture of bromine and an organic solvent in ratio of 1:50. By the way of using these films as intermediate slightly conducting insulator, a fast-response MIT based surface-barrier photodetectors have been developed. Pt films were used as TCE frontal electrode by vacuum magnetron sputtering (VMS). The current-voltage characteristic is described quantitatively based on the energy diagram and the found parameters of the ...

2008-03-01

Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties

This dissertation describes the evaluation of many-pixel Cadmium-Zinc-Telluride (CdZnTe) hard-X-ray detectors for future use with the High Energy Replicated Optics (HERO) telescope being developed at Marshall Space Flight Center. The detector requirements for the HERO application are good energy resolution (sufficient to resolve cyclotron features and nuclear lines), spatial resolution of ∼200 μm, minimal charge loss of absorbed X rays, and minimal sensitivity to the background environment. This research concentrates on assessing the suitability of these detectors for the focus of HERO, and includes the development of a simulation of the physics involved in an X-ray-detector interaction, a study of the intrinsic material properties, measurements with prototype detectors such as the energy and spatial resolution, charge loss, and X-ray background reduction through 3-dimensional depth sensing. Two types of detectors were available for evaluation. The ...

2004-01-01

X-ray diffraction evaluation of the structural perfection of cadmium telluride single crystals

Coaxial nanocables with a single-crystalline zinc telluride (ZnTe) nanowire core and an amorphous silicon oxide (SiO_x) shell have been synthesized via a simple one-step chemical vapor deposition (CVD) method on gold-decorated silicon substrates. The single-crystal ZnTe nanowire core is in zinc-blende structure along the [111] direction, while the uniform SiO_x shell fully covers the core with no observable pin-hole or crack. Formation mechanisms of the ZnTe-SiO_x nanocables are discussed. The ZnTe nanowire core shows p-type electrical properties while the SiO_x shell acts as an effective insulating layer. The ZnTe-SiO_x nanocables may have potential applications in nanoscale devices, such as p-type FETs and nanosensors.

2009-11-11

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Technical evaluation of Solar Cells, Inc., CdTe module and array at NREL

A high degree of structural perfection is an essential requirement for CdTe crystals used as substrates for the epitaxial growth of CdHgTe alloys. Here, a method for the evaluation of the structural perfection of CdTe crystals is proposed which is based on X-ray diffraction measurements using both two-crystal and three-crystal diffractometers (differential version). The method makes it possible to obtain more information on structural perfection both at the crystal surface and within the crystal body.

1988-08-01

Influence of Dopants on Characteristics of X-Ray Detectors Fabricated from Indium-, Gallium-, and Chlorine-Doped Cadmium Telluride Single Crystals

The Engineering and Technology Validation Team at the National Renewable Energy Laboratory (NREL) conducts in-situ technical evaluations of polycrystalline thin-film photovoltaic (PV) modules and arrays. This paper focuses on the technical evaluation of Solar Cells, Inc., (SCI) cadmium telluride (CdTe) module and array performance by attempting to correlate individual module and array performance. This is done by examining the performance and stability of the modules and array over a period of more than one year. Temperature coefficients for module and array parameters (P{sub max}, V{sub oc}, V{sub max}, I{sub sc}, I{sub max}) are also calculated.

1996-05-01

A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

Counting characteristics of X-ray detectors fabricated from indium-doped, gallium-doped, and chlorine-doped CdTe have been investigated. The detectors fabricated from indium-doped and gallium-doped crystals showed radiation-induced polarization, namely, a progressive decrease of count rate with an increase of photon fluence in the high-photon-fluence region, while the detectors fabricated from chlorine-doped crystals did not. Results from current-voltage characteristics of the detectors indicated that the different counting characteristics of these detectors originated from the difference in internal electric fields in each detector.

1995-08-01

Benchmark Analysis of Subcritical Noise Measurements on a Nickel-Reflected Plutonium Metal Sphere

One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.

2008-06-18

Rare-earth-rich tellurides: Gd_4NiTe_2 and Er_5M_2Te_2 (M=Co, Ni)

Subcritical experiments using californium source-driven noise analysis (CSDNA) and Feynman variance-to-mean methods were performed with an alpha-phase plutonium sphere reflected by nickel shells, up to a maximum thickness of 7.62 cm. Both methods provide means of determining the subcritical multiplication of a system containing nuclear material. A benchmark analysis of the experiments was performed for inclusion in the 2010 edition of the International Handbook of Evaluated Criticality Safety Benchmark Experiments. Benchmark models have been developed that represent these subcritical experiments. An analysis of the computed eigenvalues and the uncertainty in the experiment and methods was performed. The eigenvalues computed using the CSDNA method were very close to those calculated using MCNP5; however, computed eigenvalues are used in the analysis of the CSDNA method. Independent calculations using KENO-VI provided similar eigenvalues to those determined using the ...

2009-09-01

Pulse Rise Time Characterization of a High Pressure Xenon Gamma Detector for use in Resolution Enhancement

Three new rare earth metal-rich compounds, Gd_4NiTe_2, and Er_5M_2Te_2 (M=Ni, Co), were synthesized in direct reactions using R, R_3M, and R_2Te_3 (R=Gd, Er; M=Co, Ni) and single-crystal structures were determined. Gd_4NiTe_2 is orthorhombic and crystallizes in space group Pnma with four formula units per cell. Lattice parameters at 110(2)K are a=15.548(9), b=4.113(2), c=11.7521(15)A. Er_5Ni_2Te_2 and Er_5Co_2Te_2 are isostructural and crystallize in the orthorhombic space group Cmcm with two formula units per cell. Lattice parameters at 110(2)K are a=3.934(1), b=14.811(4), c=14.709(4)A, and a=3.898(1), b=14.920(3), c=14.889(3)A, respectively. Metal-metal bonding correlations were analyzed using the empirical Pauling bond order concept.

2004-11-01

Radiation damage measurements in room temperature semiconductor radiation detectors

High pressure xenon ionization chamber detectors are possible alternatives to traditional thallium doped sodium iodide (NaI(Tl)) and hyperpure germanium as gamma spectrometers in certain applications. Xenon detectors incorporating a Frisch grid exhibit energy resolutions comparable to cadmium/zinc/telluride (CZT) (e.g. 2% (at) 662keV) but with far greater sensitive volumes. The Frisch grid reduces the position dependence of the anode pulse risetimes, but it also increases the detector vibration sensitivity, anode capacitance, voltage requirements and mechanical complexity. We have been investigating the possibility of eliminating the grid electrode in high-pressure xenon detectors and preserving the high energy resolution using electronic risetime compensation methods. A two-electrode cylindrical high pressure xenon gamma detector coupled to time-to-amplitude conversion electronics was used to characterize the pulse rise time of deposited gamma photons. Time ...

2000-01-01

Radiant emittance of xenon positive column discharges

The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI{sub 2}) is reviewed and in the case of CZT supplemented by new alpha particle data. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10{sup 10} p/cm{sup 2} and significant bulk leakage after 10{sup 12} p/cm{sup 2}. CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5 {times} 10{sup 9} p/cm{sup 2} in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from moderated fission spectrum of neutrons after fluences up to 10{sup 10} n/cm{sup 2}, although activation was evident. Exposures of CZT to 5 MeV alpha particle at fluences up to 1.5 {times} 10{sup 10} {alpha}/cm{sup 2} produced a near linear decrease in peak position with fluence and increases in FWHM ...

1998-12-01

Magnetic properties and low temperature X-ray studies of the weak ferromagnetic monoclinic and trigonal chromium tellurides Cr_5Te_8

An embodiment of a mercury-free fluorescent lamp combines a low pressure rare gas discharges with a phosphor having a quantum efficiency grater than one. The choice of the rare gas depends on a number of factors, one of which is the resonance transition energy. Less demand is placed the quantum efficiency of the phosphor for a lower energy resonance photon. Xenon has the lowest energy resonance transition of the stable rare gases at 8.5 eV (147 nm) and thus is a good candidate to study. The usefulness of a xenon-based discharge depends on the radiant emittance of the discharge at the resonance wavelength of 147 nm. The radiant emittance from a low pressure xenon positive column discharge is measured using two independent techniques. The first relies on the measurement of the resonance level density using absorption techniques. The effective decay rate of the resonance level is calculated using radiation trapping theory. The product of this density and trapped decay rate yields the ...

1994-12-31