Spectroscopic and redox properties of curium and californium ions in concentrated aqueous carbonate-bicarbonate media

International Nuclear Information System (INIS)

Hobart, D.E.; Varlashkin, P.G.; Samhoun, K.; Haire, R.G.; Peterson, J.R.

1983-01-01

Multimilligram quantities of trivalent curium-248 and californium-249 were investigated by absorption spectroscopy, cyclic voltammetry, and bulk solution electrolysis in concentrated aqueous carbonate-bicarbonate solution. Actinide concentrations between 10 -4 and 10 -2 M were studied in 2 M sodium carbonate and 5.5 M potassium carbonate solutions at pH values from 8 to 14. The solution absorption spectra of Cm(III) and Cf(III) in carbonate media are presented for the first time and compared to literature spectra of these species in noncomplexing aqueous solution. It was anticipated that carbonate complexation of the actinide ions could provide a sufficient negative shift in the formal potentials of the M(IV)/M(III) couples of Cm and Cf to permit the generation and stabilization of their tetravalent states in aqueous carbonate-bicarbonate medium. No conclusive evidence was found in the present work to indicate the existence of any higher oxidation states of curium or californium in carbonate solution. Some possible reasons for our inability to generate and detect oxidized species of curium and californium in this medium are discussed

Window structure for passivating solar cells based on gallium arsenide

Science.gov (United States)

Barnett, Allen M. (Inventor)

1985-01-01

Passivated gallium arsenide solar photovoltaic cells with high resistance to moisture and oxygen are provided by means of a gallium arsenide phosphide window graded through its thickness from arsenic rich to phosphorus rich.

Californium-252

International Nuclear Information System (INIS)

1975-01-01

This meeting constituted the third phase of a project initiated by the Dosimetry Section of the IAEA in 1973. The first step, early in 1973, consisted of the development of a programme for the loan of Cf-252 sources to the Member States in support of education, training and some limited research. To date, 14 institutions in 13 Member States have participated in this loan programme. In August last year, the Agency published an instructional syllabus and laboratory manual authored by Professors Eric J. Hall and Harald H. Rossi of Columbia University (Californium-252 in Teaching and Research, Technical Reports Series No. 159). The appearance of this publication, including guidance on the design and construction of a storage and use facility, was the second phase of this programme aimed at providing some support to potential users in the fields of radiation biology and dosimetry. The objective of the programme's third phase - the convening of an Educational Seminar - was to provide a forum to bring together participants in the Agency's loan programme and experts in various scientific fields. Specifically, the Seminar consisted of a series of expert presentations in spectrometry, activation and prompt gamma analyses, on-stream analysis, dosimetry, health physics, radiology and radiotherapy. (author)

X-ray-diffraction study of californium metal to 16 GPa

International Nuclear Information System (INIS)

Peterson, J.R.; Benedict, U.; Dufour, C.; Birkel, I.; Haire, R.G.

1983-01-01

The first series of measurements to determine the structural behavior of californium (Cf) metal under pressure has been carried out. The initial dhcp structure transformed sluggishly with increasing pressure to a fcc structure. A bulk modulus of 50(5) GPa was derived for dhcp Cf metal from the relative volume (V/V 0 ) data to 10 GPa

Study of the shielding for spontaneous fission sources of Californium-252

International Nuclear Information System (INIS)

Davila R, I.

1991-06-01

A shielding study is made to attenuate, until maximum permissible levels, the neutrons radiation and photons emitted by spontaneous fission coming from a source of Californium-252. The compound package by a database (Library DLC-23) and the ANISNW code is used, in it version for personal computer. (Author)

Convenient method of simultaneously analyzing aluminum and magnesium in pharmaceutical dosage forms using californium-252 thermal neutron activation

International Nuclear Information System (INIS)

Landolt, R.R.; Hem, S.L.

1983-01-01

A commercial antacid suspension containing aluminum hydroxide and magnesium hydroxide products was used as a model sample to study the use of a californium-252 thermal neutron activation as a method for quantifying aluminum content as well as for the simultaneous assay of aluminum and magnesium. A 3.5-micrograms californium-252 source was used for the activation, and the induced aluminum-28 and magnesium-27 activity was simultaneously measured by sodium iodide crystal gamma-ray spectrometry using dual single-channel analyzers and scalers. The antacid suspension was contained in a chamber designed with the unique capability of serving as the container for counting the induced radioactivity in addition to being the irradiation chamber itself. This pilot study demonstrated that use of more intense californium-252 sources, which are commonly available, would provide a method that is competitive with the ethylenediaminetetraacetic acid titration method in precision and in other aspects as well

Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

Energy Technology Data Exchange (ETDEWEB)

Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.

1990-12-01

Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

Rutherford backscatter measurements on tellurium and cadmium implanted gallium arsenide

International Nuclear Information System (INIS)

Bell, E.C.

1979-10-01

The primary aim of the work described in this thesis was to examine implanted layers of the dopant impurities cadmium and tellurium in gallium arsenide and to experimentally assess their potential for producing electrically active layers. 1.5 MeV Rutherford backscattering measurements of lattice disorder and atom site location have been used to assess post implantation thermal annealing and elevated temperature implantations to site the dopant impurities on either gallium or arsenic lattice positions in an otherwise undisordered lattice. Pyrolitically deposited silicon dioxide was used as an encapsulant to prevent thermal dissociation of the gallium arsenide during annealing. It has been shown that high doses of cadmium and tellurium can be implanted without forming amorphous lattice disorder by heating the gallium arsenide during implantation to relatively low temperatures. Atom site location measurements have shown that a large fraction of a tellurium dose implanted at 180 0 C is located on or near lattice sites. Channeled backscatter measurements have shown that there is residual disorder or lattice strain in gallium arsenide implanted at elevated temperatures. The extent of this disorder has been shown to depend on the implanted dose and implantation temperature. The channeling effect has been used to measure annealing of the disorder. (author)

Atlantic Richfield Hanford Company californium multiplier/delayed neutron counter safety analysis

International Nuclear Information System (INIS)

Zimmer, W.H.

1976-08-01

The Californium Multiplier (CFX) is a subcritical assembly of uranium surrounding 252 Cf spontaneously fissioning neutron sources; its function is to multiply the neutron flux to a level useful for activation analysis. This document summarizes the safety analysis aspects of the CFX, DNC, pneumatic transfer system, and instrumentation and to detail all the aspects of the total facility as a starting point for the ARHCO Safety Analysis Review. Recognized hazards and steps already taken to neutralize them are itemized

Californium oxygen system for 1.50 < O/Cf < 1.72

International Nuclear Information System (INIS)

Turcotte, R.P.; Haire, R.G.

1975-01-01

The californium-oxygen system was studied as a function of temperature, oxygen pressure, and stoichiometry by manometric and x-ray diffraction methods. The results establish rhombohedral Cf 7 O 12 as the stable compound obtained by heating Cf 2 O 3 in air. The isobaric oxidation-reduction cycles Cf 2 O 3 → Cf 7 O 12 → Cf 2 O 3 , observed in constant rate of heating (cooling) experiments, occur with large hysteresis. A close parallel to other fluorite related lanthanide and actinide oxide systems is established. (auth)

Density Functional Theory Study on Defect Feature of AsGaGaAs in Gallium Arsenide

Directory of Open Access Journals (Sweden)

Deming Ma

2015-01-01

Full Text Available We investigate the defect feature of AsGaGaAs defect in gallium arsenide clusters in detail by using first-principles calculations based on the density functional theory (DFT. Our calculations reveal that the lowest donor level of AsGaGaAs defect on the gallium arsenide crystal surface is 0.85 eV below the conduction band minimum, while the lowest donor level of the AsGaGaAs defect inside the gallium arsenide bulk is 0.83 eV below the bottom of the conduction band, consistent with gallium arsenide EL2 defect level of experimental value (Ec-0.82 eV. This suggests that AsGaGaAs defect is one of the possible gallium arsenide EL2 deep-level defects. Moreover, our results also indicate that the formation energies of internal AsGaGaAs and surface AsGaGaAs defects are predicted to be around 2.36 eV and 5.54 eV, respectively. This implies that formation of AsGaGaAs defect within the crystal is easier than that of surface. Our results offer assistance in discussing the structure of gallium arsenide deep-level defect and its effect on the material.

White beam synchrotron x-ray topography of gallium arsenide

International Nuclear Information System (INIS)

Winter, J.M. Jr.; Green, R.E. Jr.; Corak, W.S.

1988-01-01

The defect structure of gallium arsenide was investigated using white beam transmission topography. The samples were cut and polished monocrystal substrates from different suppliers. The goal of the work was to determine the viability of the method for documenting various crystallographic defect structures and establishing their effect on the performance of integrated microwave circuits fabricated on the wafers. The principles of the technique, essentially identical to classical Laue x-ray diffraction, are outlined. Two distinct defect structures were determined in the topographs. Reasons for the defect structures were postulated and the application of the method for quality control assessments of manufacturer-supplied gallium arsenide substrates was assessed

Study of current instabilities in high resistivity gallium arsenide

International Nuclear Information System (INIS)

Barraud, A.

1968-01-01

We have shown the existence and made a study of the current oscillations produced in high-resistivity gallium arsenide by a strong electric field. The oscillations are associated with the slow travelling of a region of high electrical field across the whole sample. An experimental study of the properties of these instabilities has made it possible for us to distinguish this phenomenon from the Gunn effect, from acoustic-electric effects and from contact effects. In order to account for this type of instability, a differential trapping mechanism involving repulsive impurities is proposed; this mechanism can reduce the concentration of charge carriers in the conduction band at strong electrical fields and can lead to the production of a high-field domain. By developing this model qualitatively we have been able to account for all the properties of high-resistance gallium arsenide crystals subjected to a strong electrical field: increase of the Hall constant, existence of a voltage threshold for these oscillations, production of domains of high field, low rate of propagation of these domains, and finally the possibility of inverting the direction of the propagation of the domain without destroying the latter. A quantitative development of the model makes it possible to calculate the various characteristic parameters of these instabilities. Comparison with experiment shows that there is a good agreement, the small deviations coming especially from the lack of knowledge concerning transport properties in gallium arsenide subjected to high fields. From a study of this model, it appears that the instability phenomenon can occur over a wide range of repulsive centre concentrations, and also for a large range of resistivities. This is the reason why it appears systematically in gallium arsenide of medium and high resistivity. (authors) [fr

Electrical properties of indium arsenide irradiated with fast neutrons

International Nuclear Information System (INIS)

Kolin, N.G.; Osvenskii, V.B.; Rytova, N.S.; Yurova, E.S.

1987-01-01

A study was made of the influence of irradiation with fast reactor neutrons on electrical properties of indium arsenide samples with different dopant concentrations. The laws governing the formation and annealing of radiation defects in indium arsenide were found to be governed by the donor-acceptor interaction. Depending on the density of free carriers in the original crystal, irradiation could produce charged defects of predominantly donor or acceptor types. Donor defects in irradiated InAs samples were annealed practically completely, whereas a considerable fraction of residual acceptor defects was retained even after heat treatment at 900 degree C. The concentration of these residual acceptors depended on the electron density at the annealing temperature

Assessment of the neutron component in a neutron-gamma field of a californium-252 source

International Nuclear Information System (INIS)

Tetteh, G.K.

1978-12-01

Experiments have been performed to determine the percentages of the different components in the radiation field of californium-252 which has now some clinical applications. Using Rossi Chambers in conjunction with absorption investigations involving lead and aluminium thimbles, it is observed that the dose rates due to the different components are: neutrons 54%; gammas 30%; betas 16%

Assessment of arsenic exposures and controls in gallium arsenide production.

Science.gov (United States)

Sheehy, J W; Jones, J H

1993-02-01

The electronics industry is expanding the use of gallium arsenide in the production of optoelectronic devices and integrated circuits. Workers in the electronics industry using gallium arsenide are exposed to hazardous substances such as arsenic, arsine, and various acids. Arsenic requires stringent controls to minimize exposures (the current OSHA PEL for arsenic is 10 micrograms/m3 and the NIOSH REL is 2 micrograms/m3 ceiling). Inorganic arsenic is strongly implicated in respiratory tract and skin cancer. For these reasons, NIOSH researchers conducted a study of control systems for facilities using gallium arsenide. Seven walk-through surveys were performed to identify locations for detailed study which appeared to have effective controls; three facilities were chosen for in-depth evaluation. The controls were evaluated by industrial hygiene sampling. Including personal breathing zone and area air sampling for arsenic and arsine; wipe samples for arsenic also were collected. Work practices and the use of personal protective equipment were documented. This paper reports on the controls and the arsenic exposure results from the evaluation of the following gallium arsenide processes: Liquid Encapsulated Czochralski (LEC) and Horizontal Bridgeman (HB) crystal growing, LEC cleaning operations, ingot grinding/wafer sawing, and epitaxy. Results at one plant showed that in all processes except epitaxy, average arsenic exposures were at or above the OSHA action level of 5 micrograms/m3. While cleaning the LEC crystal pullers, the average potential arsenic exposure of the cleaning operators was 100 times the OSHA PEL. At the other two plants, personal exposures for arsenic were well controlled in LEC, LEC cleaning, grinding/sawing, and epitaxy operations.

Electron emission from individual indium arsenide semiconductor nanowires

NARCIS (Netherlands)

Heeres, E.C.; Bakkers, E.P.A.M.; Roest, A.L.; Kaiser, M.A.; Oosterkamp, T.H.; Jonge, de N.

2007-01-01

A procedure was developed to mount individual semiconductor indium arsenide nanowires onto tungsten support tips to serve as electron field-emission sources. The electron emission properties of the single nanowires were precisely determined by measuring the emission pattern, current-voltage curve,

Optical Characterization of Thick Growth Orientation-Patterned Gallium Arsenide

National Research Council Canada - National Science Library

Meyer, Joshua W

2006-01-01

.... Orientation patterned gallium arsenide (OPGaAs) is a promising nonlinear conversion material because it has broad transparency and can be engineered for specific pump laser and output wavelengths using quasi-phase matching techniques...

Measurements of integral cross sections in the californium-252 fission neutron spectrum

International Nuclear Information System (INIS)

Alberts, W.G.; Guenther, E.; Matzke, M.; Rassl, G.

1977-01-01

In a low-scattering arrangement cross sections averaged over the californium-252 spontaneous fission neutron spectrum were measured. The reactions 27 Al(n,α) 46 Ti, 47 Ti, 48 Ti(n,p), 54 Fe, 56 Fe(n,p), 58 Ni(n,p), 64 Zn(n,p), 115 In(n,n') were studied in order to obtain a consistent set of threshold detectors used in fast neutron flux density measurements. Overall uncertainties between 2 and 2.5% could be achieved; corrections due to neutron scattering in source and samples are discussed

Instrumental neutron activation determination of gold in mineral raw materials using a californium neutron source

International Nuclear Information System (INIS)

Shilo, N.A.; Ippolitov, E.G.; Ivanenko, V.V.; Kustov, B.N.; Zheleznov, V.V.; Aristov, G.N.; Kovalenko, V.V.; Kondrat'ev, N.B.

1983-01-01

A facility using a californium neutron source and a method for the neutron activation analysis of gold were developed. The sensitivity of the determination is 0.1 g/t. The causes of random and systematic errors have been studied. It is concluded that in prospection and evaluation of gold ore deposists, the traditional test tube analysis for gold may be replaced with the developed method. (author)

Neutron reflector design with Californium 252 neutron for Boron neutron chapter therapy facility using MCNP5 simulation method

International Nuclear Information System (INIS)

Muhammad Fakhrurreza; Kusminanto; Y Sardjono

2014-01-01

In this research has made a reflector design to provide beams of Neutron for BNCT with Californium-252 radioactive source. This collimator is useful to obtain optimum epithermal neutron flux with the smallest impurity radiation (thermal neutron, fast neutron, and gamma). The design process is done using Monte Carlo N-Particle simulation version 5 (MCNP5) code to calculate the neutron flux tally form. The chosen reflector design is the reflectors which use material such as BeO ceramic with 13 cm thick. Moderator use sulfur material with the slope angle of the cone is 30°. From the calculation result, it is obtained that Reflector with 1 gram Californium-252 source can produce a neutron output thermal which has thermal neutron specification 2.23189 x 10 9 n/s.cm 2 , epithermal neutron 3.51548 x 10 9 n/s.cm 2 , and fast neutron 4.82241 x 10 9 n/s.cm 2 From the result, it needs additional collimator because the BNCT requirement. (author)

Calibration of a Modified Californium Shuffler

International Nuclear Information System (INIS)

Sadowski, E.T.; Armstrong, F.; Oldham, R.; Ceo, R.; Williams, N.

1995-01-01

A californium shuffler originally designed to assay hollow cylindrical pieces of UA1 has been modified to assay solid cylinders. Calibration standards were characterized via chemical analysis of the molten UA1 taken during casting of the standards. The melt samples yielded much more reliable characterization data than drill samples taken from standards after the standards had solidified. By normalizing one well-characterized calibration curve to several standards at different enrichments, a relatively small number of standards was required to develop an enrichment-dependent calibration. The precision of this shuffler is 0.65%, and the typical random and systematic uncertainties are 0.53% and 0.73%, respectively, for a six minute assay of an ingot containing approximately 700 grams of 235 U. This paper will discuss (1) the discrepancies encountered when UA1 standards were characterized via melt samples versus drill samples, (2) a calibration methodology employing a small number of standards, and (3) a comparison of results from a previously unused shuffler with an existing shuffler. A small number of UA1 standards have been characterized using samples from the homogeneous molten state and have yielded enrichment-dependent and enrichment-independent calibration curves on two different shufflers

Thermodynamics of gallium arsenide electrodeposition

International Nuclear Information System (INIS)

Perrault, G.G.

1986-01-01

Gallium Arsenide is well known as a very interesting compound for photoelectrical devices. Up to now, it has been prepared mostly by high temperature technology, and the authors considered that it might be of interest to set up an electrodeposition technique suitable to prepare thin layers of this compound. A reaction sequence similar to the one observed for Cadmium Sulfide or Cadmium Telluride could be considered. In these cases, the metal chalcogenide is obtained from the precipitation of the metal ions dissolved in the solutions by the reduction product of the metalloidic compound

Prompt neutron spectrum of the spontaneous fission of californium-252

International Nuclear Information System (INIS)

Zamyatnin, Yu.S.; Kroshkin, N.I.; Korostylev, V.A.; Nefedov, V.N.; Ryazanov, D.K.; Starostov, B.I.; Semenov, A.F.

1976-01-01

The californium-252 spontaneous fission neutron spectrum was measured in the energy range of 0.01 to 10 MeV by the time-of-flight technique using various neutron detectors. The measurements of 252 Cf neutron spectrum at energies of 0.01 to 5 MeV were performed as a function of fission fragment kinetic energy. The mean neutron spectrum energy in the range of 0.7 to 10 MeV was found from the results of measurements. The irregularity in the 252 Cf neutron spectrum in the neutron energy range of less than 0.7 MeV compared to theoretical values is discussed. The mechanism of 252 Cf neutron emission is also discussed on the basis of neutron yield angle measurements. 12 references

Safety Analysis Report for Packaging (SARP) of the Oak Ridge National Laboratory TRU Californium Shipping Container

International Nuclear Information System (INIS)

Box, W.D.; Shappert, L.B.; Seagren, R.D.; Klima, B.B.; Jurgensen, M.C.; Hammond, C.R.; Watson, C.D.

1980-01-01

An analytical evaluation of the Oak Ridge National Laboratory TRU Californium Shipping Container was made in order to demonstrate its compliance with the regulations governing off-site shipment of packages that contain radioactive material. The evaluation encompassed five primary categories: structural integrity, thermal resistance, radiation shielding, nuclear criticality safety, and quality assurance. The results of this evaluation demonstrate that the container complies with the applicable regulations

Neutron emission in fission of highly excited californium nuclei (E*=76 MeV)

International Nuclear Information System (INIS)

Blinov, M.V.; Bordyug, V.M.; Kozulin, Eh.M.; Mozhaev, A.N.; Levitovich, M.; Muzychka, Yu.A.; Penionzhkevich, Yu.Eh.; Pustyl'nik, B.I.

1990-01-01

The differential cross sections for neutron production in the fission of highly excited californium nuclei formed in the 238 U+ 12 C (105 MeV) reaction have been measured. From the analysis of the experimental data is follows that the number of pre-fission neutrons substantially exceeds the value obtained in the framework of the standard statistical model. The saddle-to-scission time of the excited nucleus is estimated on the basis of the neutron multiplicity. The dependences of the neutron number and neutron average energies upon the fragment mass are determined

Neutron emission in fission of highly excited californium nuclei (E* = 76 MeV)

International Nuclear Information System (INIS)

Blinov, M.V.; Bordyug, V.M.; Kozulin, E.M.; Levitovich, M.; Mozhaev, A.N.; Muzychka, Yu.A.; Penionzhkevich, Yu.E.; Pustyl'nik, B.I.

1990-01-01

Differential cross sections for neutron production have been measured in fission of excited californium nuclei produced in the reaction 238 U + 12 C (105 MeV). It follows from analysis of the experimental results that the number of neutrons emitted before fission considerably exceeds the number obtained in the framework of the standard statistical model. On the basis of the multiplicity of neutrons they authors have estimated the time of fission of the excited nucleus. The dependence of the number of neutrons and their average energies on the mass of the fragments is determined

Optical and Electrical Characterization of Melt-Grown Bulk Indium Gallium Arsenide and Indium Arsenic Phosphide Alloys

Science.gov (United States)

2011-03-01

spectrum, photoluminescence (PL), and refractive index measurements. Other methods such as infrared imagery and micro probe wavelength dispersing ...States. AFIT/DS/ENP/11-M02 OPTICAL AND ELECTRICAL CHARACTERIZATION OF MELT- GROWN BULK INDIUM GALLIUM ARSENIDE AND INDIUM ARSENIC PHOSPHIDE ...CHARACTERIZATION OF MELT-GROWN BULK INDIUM GALLIUM ARSENIDE AND INDIUM ARSENIC PHOSPHIDE ALLOYS Jean Wei, BS, MS Approved

A californium-252 source for radiobiological studies at Hiroshima University

International Nuclear Information System (INIS)

Kato, Kazuo; Takeoka, Seiji; Kuroda, Tokue; Tsujimura, Tomotaka; Kawami, Masaharu; Hoshi, Masaharu; Sawada, Shozo

1987-01-01

A 1.93 Ci (3.6 mg) californium-252 source was installed in the radiation facility of the Research Institute for Nuclear Medicine and Biology, Hiroshima University. This source produces fission neutrons (8.7 x 10 9 n/s at the time of its installation), which are similar to neutron spectrum of the atomic bombs. It is useful for studying biological effects of fission neutrons and neutron dosimetry. An apparatus was dosigned to accomodate this source and to apply it to such studies. It has resulted in profitable fission neutron exposures, while suppressing scattered neutrons and secondary gamma rays. This apparatus incorporates many safety systems, including one which interlocks with all of doors and an elevator serving the exposure room, so as to prevent accidents involving users. (author)

Californium production at the transuranium processing plant

International Nuclear Information System (INIS)

King, L.J.

1976-01-01

The Transuranium Processing Plant (TRU) at ORNL, which is the production, storage, and distribution center for the ERDA heavy element research program, is described. About 0.5 percent of 252 Cf is currently being produced. TRU is a hot-cell, chemical processing facility of advanced design. New concepts have been incorporated into the facility for absolute containment, remote operation, remote equipment installation, and remote maintenance. The facilities include a battery of nine heavily shielded process cells served by master-slave manipulators and eight laboratories, four on each of two floors. Processing includes chemical dissolution of the targets followed by a series of solvent extraction, ion exchange, and precipitation steps to separate and purify the transuranium elements. The transcurium elements Bk, Cf, Es, and Fm are distributed to users. Remote techniques are used to fabricate the Am and Cm into target rods for reirradiation in the HFIR. Californium-252 that is in excess of the needs of the heavy element research program and the Cf sales program is stored at TRU and processed repeatedly to recover the daughter product 248 Cm, which is a highly desirable research material

Comparison of the Savannah River Site billet active well coincidence counter and two Californium Shufflers

International Nuclear Information System (INIS)

Sadowski, E.T.; Griffin, J.C.; Rinard, P.M.

1991-01-01

A Scrap Californium Shuffler at the Savannah River Site (SRS) was calibrated to assay the U-Al cores of billets (an intermediate step in the SRS reactor fuel fabrication cycle.) The precision of the Scrap Shuffler over several years has been approximately 0.50%. A typical total uncertainty for the assay of a core on the Scrap Shuffler is approximately 0.33% for a twelve minute assay. The precision over several months and a typical total uncertainty for the Billet Active Well (neutron) Coincidence Counter (BAWCC) are approximately 1.0% and 1.9%, respectively, for a fifteen minute assay. A new Billet Californium Shuffler specifically designed for assaying SRS billets has yielded precision (over one month) and total uncertainty results of 0.40% and 0.69%, respectively, for an eight minute assay. The introduction of a measurement point into the fuel fabrication cycle to replace estimates based upon material weight will greatly enhance material and process control in the Reactor Materials area of SRS. The use of all three instruments provides a comparison of the relative merits of Active Well (neutron) Coincidence Counters (AWCCs) and shufflers for assay of homogeneous and geometrically simple material containing 235 U. The measurement precisions, systematic and random uncertainties, as well as the procurement and operation of each instrument will be compared. 3 refs., 5 figs., 1 tab

Measurement of californium-252 gamma photons depth dose distribution in tissue equivalent material. Vol. 4

Energy Technology Data Exchange (ETDEWEB)

Fadel, M A; El-Fiki, M A; Eissa, H M; Abdel-Hafez, A; Naguib, S H [National Institute of Standards, Cairo (Egypt)

1996-03-01

Phantom of tissue equivalent material with and without bone was used measuring depth dose distribution of gamma-rays from californium-252 source. The source was positioned at center of perspex walled phantom. Depth dose measurements were recorded for X, Y and Z planes at different distances from source. TLD 700 was used for measuring the dose distribution. Results indicate that implantation of bone in tissue equivalent medium cause changes in the gamma depth dose distribution which varies according to variation in bone geometry. 9 figs.

Hypoxic versus normoxic external-beam irradiation of cervical carcinoma combined with californium-252 neutron brachytherapy. Comparative treatment results of a 5-year randomized study

Czech Academy of Sciences Publication Activity Database

Tačev, T.; Vacek, Antonín; Ptáčková, B.; Strnad, V.

2005-01-01

Roč. 181, č. 5 (2005), s. 273-284 ISSN 0179-7158 Institutional research plan: CEZ:AV0Z50040507 Keywords : cervical carcinoma * hypoxyradiotherapy * californium-252 Subject RIV: BO - Biophysics Impact factor: 3.490, year: 2005

Metal Contacts to Gallium Arsenide.

Science.gov (United States)

Ren, Fan

1991-07-01

While various high performance devices fabricated from the gallium arsenide (GaAs) and related materials have generated considerable interest, metallization are fundamental components to all semiconductor devices and integrated circuits. The essential roles of metallization systems are providing the desired electrical paths between the active region of the semiconductor and the external circuits through the metal interconnections and contacts. In this work, in-situ clean of native oxide, high temperature n-type, low temperature n-type and low temperature p-type ohmic metal systems have been studied. Argon ion mill was used to remove the native oxide prior to metal deposition. For high temperature process n-type GaAs ohmic contacts, Tungsten (W) and Tungsten Silicide (WSi) were used with an epitaxial grown graded Indium Gallium Arsenide (InGaAs) layer (0.2 eV) on GaAs. In addition, refractory metals, Molybdenum (Mo), was incorporated in the Gold-Germanium (AuGe) based on n-type GaAs ohmic contacts to replace conventional silver as barrier to prevent the reaction between ohmic metal and chlorine based plasma as well as the ohmic metallization intermixing which degrades the device performance. Finally, Indium/Gold-Beryllium (In/Au-Be) alloy has been developed as an ohmic contact for p-type GaAs to reduce the contact resistance. The Fermi-level pinning of GaAs has been dominated by the surface states. The Schottky barrier height of metal contacts are about 0.8 V regardless of the metal systems. By using p-n junction approach, barrier height of pulsed C-doped layers was achieved as high as 1.4 V. Arsenic implantation into GaAs method was also used to enhance the barrier height of 1.6 V.

Ab initio full-potential study of mechanical properties and magnetic phase stability of californium monopnictides (CfN and CfP)

Energy Technology Data Exchange (ETDEWEB)

Amari, S., E-mail: siham_amari@yahoo.fr [Faculté des Sciences de la Nature et de la Vie, Université Hassiba Benbouali, Chlef, 02000 (Algeria); Bouhafs, B. [Laboratoire de Modélisation et Simulation en Sciences des Matériaux, Université Djillali Liabès de Sidi Bel-Abbés, Sidi Bel-Abbés, 22000 (Algeria)

2016-09-15

Based on the first-principles methods, the structural, elastic, electronic, properties and magnetic ordering of californium monopnictides CfX (X = P) have been studied using the full-potential augmented plane wave plus local orbitals (FP-L/APW + lo) method within the framework of density functional theory (DFT). The electronic exchange correlation energy is described by generalized gradient approximation GGA and GGA+U (U is the Hubbard correction). The GGA+U method is applied to the rare-earth 5f states. We have calculated the lattice parameters, bulk modulii and the first pressure derivatives of the bulk modulii. The elastic properties of the studied compounds are only investigated in the most stable calculated phase. In order to gain further information, we have calculated Young’s modulus, shear modulus, anisotropy factor and Kleinman parameter by the aid of the calculated elastic constants. The results mainly show that californium monopnictides CfX (X = P) have an antiferromagnetic spin ordering. Density of states (DOS) and charge densities for both compounds are also computed in the NaCl (B1) structure.

Study of the shielding for spontaneous fission sources of Californium-252; Estudio de blindaje para fuentes de fision espontanea de Californio-252

Energy Technology Data Exchange (ETDEWEB)

Davila R, I

1991-06-15

A shielding study is made to attenuate, until maximum permissible levels, the neutrons radiation and photons emitted by spontaneous fission coming from a source of Californium-252. The compound package by a database (Library DLC-23) and the ANISNW code is used, in it version for personal computer. (Author)

Two years of on-orbit gallium arsenide performance from the LIPS solar cell panel experiment

Science.gov (United States)

Francis, R. W.; Betz, F. E.

1985-01-01

The LIPS on-orbit performance of the gallium arsenide panel experiment was analyzed from flight operation telemetry data. Algorithms were developed to calculate the daily maximum power and associated solar array parameters by two independent methods. The first technique utilizes a least mean square polynomial fit to the power curve obtained with intensity and temperature corrected currents and voltages; whereas, the second incorporates an empirical expression for fill factor based on an open circuit voltage and the calculated series resistance. Maximum power, fill factor, open circuit voltage, short circuit current and series resistance of the solar cell array are examined as a function of flight time. Trends are analyzed with respect to possible mechanisms which may affect successive periods of output power during 2 years of flight operation. Degradation factors responsible for the on-orbit performance characteristics of gallium arsenide are discussed in relation to the calculated solar cell parameters. Performance trends and the potential degradation mechanisms are correlated with existing laboratory and flight data on both gallium arsenide and silicon solar cells for similar environments.

Possible stabilization of the tetravalent oxidation state of berkelium and californium in acetonitrile with triphenylarsine oxide

International Nuclear Information System (INIS)

Payne, G.F.; Peterson, J.R.

1987-01-01

It appears that we may have prepared Bk(IV) nitrate.nTPAs0 and Bk(IV) perchlorate.nTPAs0 complexes which formed the corresponding Cf(IV) complexes through the beta decay of Bk-249. Definitive proof should come from similar experiments with quantities of Bk-249 large enough to allow spectrophotometric detection of the characteristic f→f transitions in these berkelium and californium species. It is clear, however, that TPAs0 and acetonitrile can play a pivotal role in the stabilization of lanact(IV) species

Lattice parameters guide superconductivity in iron-arsenides

Science.gov (United States)

Konzen, Lance M. N.; Sefat, Athena S.

2017-03-01

The discovery of superconducting materials has led to their use in technological marvels such as magnetic-field sensors in MRI machines, powerful research magnets, short transmission cables, and high-speed trains. Despite such applications, the uses of superconductors are not widespread because they function much below room-temperature, hence the costly cooling. Since the discovery of Cu- and Fe-based high-temperature superconductors (HTS), much intense effort has tried to explain and understand the superconducting phenomenon. While no exact explanations are given, several trends are reported in relation to the materials basis in magnetism and spin excitations. In fact, most HTS have antiferromagnetic undoped ‘parent’ materials that undergo a superconducting transition upon small chemical substitutions in them. As it is currently unclear which ‘dopants’ can favor superconductivity, this manuscript investigates crystal structure changes upon chemical substitutions, to find clues in lattice parameters for the superconducting occurrence. We review the chemical substitution effects on the crystal lattice of iron-arsenide-based crystals (2008 to present). We note that (a) HTS compounds have nearly tetragonal structures with a-lattice parameter close to 4 Å, and (b) superconductivity can depend strongly on the c-lattice parameter changes with chemical substitution. For example, a decrease in c-lattice parameter is required to induce ‘in-plane’ superconductivity. The review of lattice parameter trends in iron-arsenides presented here should guide synthesis of new materials and provoke theoretical input, giving clues for HTS.

Experimental studies on californium bioavailability to marine benthic invertebrates

International Nuclear Information System (INIS)

Fowler, S.W.; Carvalho, F.P.; Aston, S.R.

1986-01-01

252 Cf is readily taken up by benthic invertebrates from sea water, reaching whole-body concentration factors of 763 in the polychaete Hermione hystrix, 220 in the shrimp Lysmata seticaudata, 665 in the crab Pilumnus hirtellus and 78 in the bivalve mollusc Venerupis decussata after 3 weeks exposure. Surface sorption plays a predominant role in the uptake process. Depuration in clean sea water was a relatively slow process. The shrimp Lysmata eliminated 252 Cf very rapidly due to moulting. Absorption coefficients for ingested 252 Cf were high, approx. 23% in crabs and approx. 97% in brittlestars. The absorbed fraction was excreted twice as fast from crabs as brittlestars. Exposure of organisms to labelled sediment resulted in low transfer factors that were species dependent. There is some evidence to suggest that uptake from sediments is primarily due to 252 Cf transfer from the pore water. Comparison of these results with published experimental data on other transuranic nuclides in the same or similar species suggests that californium bioavailability is roughly equivalent to that of plutonium and americium. (author)

Properties of gallium arsenide alloyed with Ge and Se by irradiation in nuclear reactor thermal column

International Nuclear Information System (INIS)

Kolin, N.G.; Osvenskij, V.B.; Tokarevskij, V.V.; Kharchenko, V.A.; Ievlev, S.M.

1985-01-01

Dependences of electrophysical properties as well as lattice unit spacing and density of nuclear-alloyed gallium arsenide on the fluence of reactor neutrons and heat treatment are investigated. Neutron radiation of gallium arsenide with different energy spectra is shown to differently affect material properties. Fast neutrons make the main contribution to defect formation. Concentration of compensating acceptor defects formed under GaAs radiation in a thermal column practically equals concentration of introduced donor impurities. Radiation defects of acceptor type are not annealed in the material completely even at 900-1000 deg C

High purity liquid phase epitaxial gallium arsenide nuclear radiation detector

International Nuclear Information System (INIS)

Alexiev, D.; Butcher, K.S.A.

1991-11-01

Surface barrier radiation detector made from high purity liquid phase epitaxial gallium arsenide wafers have been operated as X- and γ-ray detectors at various operating temperatures. Low energy isotopes are resolved including 241 Am at 40 deg C. and the higher gamma energies of 235 U at -80 deg C. 15 refs., 1 tab., 6 figs

Liquid phase epitaxy of gallium arsenide - a review

International Nuclear Information System (INIS)

Alexiev, D.; Edmondson, M.; Butcher, K.S.A.; Tansley, T.

1992-07-01

Liquid phase epitaxy of gallium arsenide has been investigated intensively from the late 1960's to the present and has now a special place in the manufacture of wide band, compound semiconductor radiation detectors. Although this particular process appears to have gained prominence in the last three decades, the authors point out that its origins reach back to 1836 when Frankenheim made his first observations. A brief review is presented from a semiconductor applications point of view on how this subject developed. 70 refs., 5 figs

Noise suppression and long-range exchange coupling for gallium arsenide spin qubits

DEFF Research Database (Denmark)

Malinowski, Filip

This thesis presents the results of the experimental study performed on spin qubits realized in gate-defined gallium arsenide quantum dots, with the focus on noise suppression and long-distance coupling. First, we show that the susceptibility to charge noise can be reduced by reducing the gradien...

THE QUANTUM-WELL STRUCTURES OF SELF ELECTROOPTIC-EFFECT DEVICES AND GALLIUM-ARSENIDE

Directory of Open Access Journals (Sweden)

Mustafa TEMİZ

1996-02-01

Full Text Available Multiple quantum-well (MQW electroabsorptive self electro optic-effect devices (SEEDs are being extensively studied for use in optical switching and computing. The self electro-optic-effect devices which has quantum-well structures is a new optoelectronic technology with capability to obtain both optical inputs and outputs for Gallium-Arsenide/Aluminum Gallium-Arsenide (GaAs/AlGaAs electronic circuits. The optical inputs and outputs are based on quantum-well absorptive properties. These quantum-well structures consist of many thin layers of semiconductors materials of GaAs/AlGaAs which have emerged some important directions recently. The most important advance in the physics of these materials since the early days has been invention of the heterojunction structures which is based at present on GaAs technology. GaAs/AlGaAs structures present some important advantages to relevant band gap and index of refraction which allow to form the quantum-well structures and also to make semiconductor lasers, dedectors and waveguide optical switches.

Californium-252 Brachytherapy Combined With External-Beam Radiotherapy for Cervical Cancer: Long-Term Treatment Results

International Nuclear Information System (INIS)

Lei Xin; Qian Chengyuan; Qing Yi; Zhao Kewei; Yang Zhengzhou; Dai Nan; Zhong Zhaoyang; Tang Cheng; Li Zheng; Gu Xianqing; Zhou Qian; Feng Yan; Xiong Yanli; Shan Jinlu; Wang Dong

2011-01-01

Purpose: To observe, by retrospective analysis, the curative effects and complications due to californium-252 ( 252 Cf) neutron intracavitary brachytherapy (ICBT) combined with external-beam radiotherapy (EBRT) in the treatment of cervical cancer. Methods and Materials: From February 1999 to December 2007, 696 patients with cervical cancer (Stages IB to IIIB) were treated with 252 Cf-ICBT in combination of EBRT. Of all, 31 patients were at Stage IB, 104 at IIA, 363 at IIB, 64 at IIIA, and 134 at IIIB. Californium-252 ICBT was delivered at 7–12 Gy per insertion per week, with a total dose of 29–45 Gy to reference point A in three to five insertions. The whole pelvic cavity was treated with 8-MV X-ray external irradiation at 2 Gy per fraction, four times per week. After 16–38 Gy of external irradiation, the center of the whole pelvic field was blocked with a 4-cm-wide lead shield, with a total external irradiation dose of 44–56 Gy. The total treatment course was 5 to 6 weeks. Results: Overall survival rate at 3 and 5 years for all patients was 76.0% and 64.9%, respectively. Disease-free 3- and 5-year survival rates of patients were 71.2% and 58.4%, respectively. Late complications included vaginal contracture and adhesion, radiation proctitis, radiation cystitis, and inflammatory bowel, which accounted for 5.8%, 7.1%, 6.2%, and 4.9%, respectively. Univariate analysis results showed significant correlation of stage, age, histopathologic grade, and lymph node status with overall survival. Cox multiple regression analysis showed that the independent variables were stage, histopathologic grade, tumor size, and lymphatic metastasis in all patients. Conclusion: Results of this series suggest that the combined use of 252 Cf-ICBT with EBRT is an effective method for treatment of cervical cancer.

Teratogenic effect of Californium-252 irradiation in rats

International Nuclear Information System (INIS)

Satow, Yukio; Lee, Juing-Yi; Hori, Hiroshi; Okuda, Hiroe; Tsuchimoto, Shigeo; Sawada, Shozo; Yokoro, Kenjiro

1989-01-01

The teratogenicity of Californium-252 (Cf-252) irradiation which generates approximately 70% 2.3 MeV fast neutron and 30% gamma rays was evaluated. A single whole body exposure of Cf-252 at various doses was given to pregnant rats on day 8 or 9 of pregnancy, followed by microscopic autopsy of the fetuses at the terminal stage of pregnancy to search for external and internal malformations. For comparison, pregnant rats were irradiated with various doses of Cobalt-60 (Co-60) standard gamma rays at the same dose rate (1 rad/min.). The doses were 20-120 rad of Cf-252 and 80-220 rad of Co-60. Using frequency of radiation induced malformations observed on day 8 of pregnancy as an index, relative biological effectiveness (RBE) of 2.3-2.7 was obtained from the straight line obtained by modifying by the least squares method the frequency curves of malformed fetuses in total implants and in surviving fetuses. The types of malformations induced by Cf-252 and Co-60 irradiation were alike. Using fetal LD 50 as an index, 2.4 was obtained as RBE when irradiated on day 8 of pregnancy and 3.1 as that when irradiated on day 9. The results showed that Cf-252 had stronger a teratogenic effect than Co-60 gamma rays. (author)

Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals

Science.gov (United States)

Mishina, H.; Buckley, D. H.

1984-01-01

Friction experiments were conducted for the semiconductors silicon and gallium arsenide in contact with pure metals. Polycrystalline titanium, tantalum, nickel, palladium, and platinum were made to contact a single crystal silicon (111) surface. Indium, nickel, copper, and silver were made to contact a single crystal gallium arsenide (100) surface. Sliding was conducted both in room air and in a vacuum of 10 to the minus 9th power torr. The friction of semiconductors in contact with metals depended on a Schottky barrier height formed at the metal semiconductor interface. Metals with a higher barrier height on semiconductors gave lower friction. The effect of the barrier height on friction behavior for argon sputtered cleaned surfaces in vacuum was more specific than that for the surfaces containing films in room air. With a silicon surface sliding on titanium, many silicon particles back transferred. In contrast, a large quantity of indium transferred to the gallium arsenide surface.

Anomalous tensoelectric effects in gallium arsenide tunnel diodes

Energy Technology Data Exchange (ETDEWEB)

Alekseeva, Z.M.; Vyatkin, A.P.; Krivorotov, N.P.; Shchegol' , A.A.

1988-02-01

Anomalous tensoelectric phenomena induced in a tunnel p-n junction by a concentrated load and by hydrostatic compression were studied. The anomalous tensoelectric effects are caused by the action of concentrators of mechanical stresses in the vicinity of the p-n junction, giving rise to local microplastic strain. Under the conditions of hydrostatic compression prolate inclusions approx.100-200 A long play the role of concentrators. Analysis of irreversible changes in the current-voltage characteristics of tunnel p-n junctions made it possible to separate the energy levels of the defects produced with plastic strain of gallium arsenide.

Macroscopic diffusion models for precipitation in crystalline gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Kimmerle, Sven-Joachim Wolfgang

2009-09-21

Based on a thermodynamically consistent model for precipitation in gallium arsenide crystals including surface tension and bulk stresses by Dreyer and Duderstadt, we propose two different mathematical models to describe the size evolution of liquid droplets in a crystalline solid. The first model treats the diffusion-controlled regime of interface motion, while the second model is concerned with the interface-controlled regime of interface motion. Our models take care of conservation of mass and substance. These models generalise the well-known Mullins- Sekerka model for Ostwald ripening. We concentrate on arsenic-rich liquid spherical droplets in a gallium arsenide crystal. Droplets can shrink or grow with time but the centres of droplets remain fixed. The liquid is assumed to be homogeneous in space. Due to different scales for typical distances between droplets and typical radii of liquid droplets we can derive formally so-called mean field models. For a model in the diffusion-controlled regime we prove this limit by homogenisation techniques under plausible assumptions. These mean field models generalise the Lifshitz-Slyozov-Wagner model, which can be derived from the Mullins-Sekerka model rigorously, and is well understood. Mean field models capture the main properties of our system and are well adapted for numerics and further analysis. We determine possible equilibria and discuss their stability. Numerical evidence suggests in which case which one of the two regimes might be appropriate to the experimental situation. (orig.)

Photo-dissociation of hydrogen passivated dopants in gallium arsenide

International Nuclear Information System (INIS)

Tong, L.; Larsson, J.A.; Nolan, M.; Murtagh, M.; Greer, J.C.; Barbe, M.; Bailly, F.; Chevallier, J.; Silvestre, F.S.; Loridant-Bernard, D.; Constant, E.; Constant, F.M.

2002-01-01

A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the Si Ga -H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-dissociation of C As -H is not observed for photon energies up to 5.58 eV. This fundamental difference in the photo-dissociation behavior between the two dopants is explained in terms of the localized excitation energies about the Si-H and C-H bonds

Pulsed electron-beam annealing of selenium-implanted gallium arsenide

International Nuclear Information System (INIS)

Inada, T.; Tokunaga, K.; Taka, S.

1979-01-01

Electrical properties of selenium-implanted gallium arsenide annealed by a single shot of high-power pulsed electron beams have been investigated by differential Hall-effect and sheet-resistivity measurements. It has been shown that higher electrical activation of implanted selenium can be obtained after electron-beam annealing at an incident energy density of 1.2 J/cm 2 , independent of heating of GaAs substrate during implantation. Measured carrier concentrations exhibit uniformly distributed profiles having carrier concentrations of 2--3 x 10 19 /cm 3 , which is difficult to realize by conventional thermal annealing

Transport calculations of. gamma. -ray flux density and dose rate about implantable californium-252 sources

Energy Technology Data Exchange (ETDEWEB)

Shapiro, A; Lin, B I [Cincinnati Univ., Ohio (USA). Dept. of Chemical and Nuclear Engineering; Windham, J P; Kereiakes, J G

1976-07-01

..gamma.. flux density and dose rate distributions have been calculated about implantable californium-252 sources for an infinite tissue medium. Point source flux densities as a function of energy and position were obtained from a discrete-ordinates calculation, and the flux densities were multiplied by their corresponding kerma factors and added to obtain point source dose rates. The point dose rates were integrated over the line source to obtain line dose rates. Container attenuation was accounted for by evaluating the point dose rate as a function of platinum thickness. Both primary and secondary flux densities and dose rates are presented. The agreement with an independent Monte Carlo calculation was excellent. The data presented should be useful for the design of new source configurations.

Beyond Californium-A Neutron Generator Alternative for Dosimetry and Instrument Calibration in the U.S.

Science.gov (United States)

Piper, Roman K; Mozhayev, Andrey V; Murphy, Mark K; Thompson, Alan K

2017-09-01

Evaluations of neutron survey instruments, area monitors, and personal dosimeters rely on reference neutron radiations, which have evolved from the heavy reliance on (α,n) sources to a shared reliance on (α,n) and the spontaneous fission neutrons of californium-252 (Cf). Capable of producing high dose equivalent rates from an almost point source geometry, the characteristics of Cf are generally more favorable when compared to the use of (α,n) and (γ,n) sources or reactor-produced reference neutron radiations. Californium-252 is typically used in two standardized configurations: unmoderated, to yield a fission energy spectrum; or with the capsule placed within a heavy-water moderating sphere to produce a softened spectrum that is generally considered more appropriate for evaluating devices used in nuclear power plant work environments. The U.S. Department of Energy Cf Loan/Lease Program, a longtime origin of affordable Cf sources for research, testing and calibration, was terminated in 2009. Since then, high-activity sources have become increasingly cost-prohibitive for laboratories that formerly benefited from that program. Neutron generators, based on the D-T and D-D fusion reactions, have become economically competitive with Cf and are recognized internationally as important calibration and test standards. Researchers from the National Institute of Standards and Technology and the Pacific Northwest National Laboratory are jointly considering the practicality and technical challenges of implementing neutron generators as calibration standards in the U.S. This article reviews the characteristics of isotope-based neutron sources, possible isotope alternatives to Cf, and the rationale behind the increasing favor of electronically generated neutron options. The evaluation of a D-T system at PNNL has revealed characteristics that must be considered in adapting generators to the task of calibration and testing where accurate determination of a dosimetric quantity is

Detection of spin-states in Mn-doped gallium arsenide films

International Nuclear Information System (INIS)

Hofer, Werner A; Palotas, Krisztian; Teobaldi, Gilberto; Sadowski, Janusz; Mikkelsen, Anders; Lundgren, Edvin

2007-01-01

We show that isolated magnetic dipoles centred at the position of manganese impurities in a gallium arsenide lattice lead to spin polarized states in the bandgap of the III-V semiconductor. Spectroscopy simulations with a tungsten tip agree well with experimental data; in this case, no difference can be observed for the two magnetic groundstates. But if the signal is read with a magnetic iron tip, it changes by a factor of up to 20, depending on the magnetic orientation of the Mn atom

Neutron activation analysis at the Californium User Facility for Neutron Science

International Nuclear Information System (INIS)

Martin, R.C.; Smith, E.H.; Glasgow, D.C.; Jerde, E.A.; Marsh, D.L.; Zhao, L.

1997-12-01

The Californium User Facility (CUF) for Neutron Science has been established to provide 252 Cf-based neutron irradiation services and research capabilities including neutron activation analysis (NAA). A major advantage of the CUF is its accessibility and controlled experimental conditions compared with those of a reactor environment The CUF maintains the world's largest inventory of compact 252 Cf neutron sources. Neutron source intensities of ≤ 10 11 neutrons/s are available for irradiations within a contamination-free hot cell, capable of providing thermal and fast neutron fluxes exceeding 10 8 cm -2 s -1 at the sample. Total flux of ≥10 9 cm -2 s -1 is feasible for large-volume irradiation rabbits within the 252 Cf storage pool. Neutron and gamma transport calculations have been performed using the Monte Carlo transport code MCNP to estimate irradiation fluxes available for sample activation within the hot cell and storage pool and to design and optimize a prompt gamma NAA (PGNAA) configuration for large sample volumes. Confirmatory NAA irradiations have been performed within the pool. Gamma spectroscopy capabilities including PGNAA are being established within the CUF for sample analysis

Testing of gallium arsenide solar cells on the CRRES vehicle

International Nuclear Information System (INIS)

Trumble, T.M.

1985-01-01

A flight experiment was designed to determine the optimum design for gallium arsenide (GaAs) solar cell panels in a radiation environment. Elements of the experiment design include, different coverglass material and thicknesses, welded and soldered interconnects, different solar cell efficiencies, different solar cell types, and measurement of annealing properties. This experiment is scheduled to fly on the Combined Release and Radiation Effects Satellite (CRRES). This satellite will simultaneously measure the radiation environment and provide engineering data on solar cell degradation that can be directly related to radiation damage

Application of californium-252 neutron sources for analytical chemistry

International Nuclear Information System (INIS)

Ishii, Daido

1976-01-01

The researches made for the application of Cf-252 neutron sources to analytical chemistry during the period from 1970 to 1974 including partly 1975 are reviewed. The first part is the introduction to the above. The second part deals with general review of symposia, publications and the like. Attention is directed to ERDA publishing the periodical ''Californium-252 Progress'' and to a study group of Cf-252 utilization held by Japanese Radioisotope Association in 1974. The third part deals with its application for radio activation analysis. The automated absolute activation analysis (AAAA) of Savannha River is briefly explained. The joint experiment of Savannha River operation office with New Brunswick laboratory is mentioned. Cf-252 radiation source was used for the non-destructive analysis of elements in river water. East neutrons of Cf-252 were used for the quantitative analysis of lead in paints. Many applications for industrial control processes have been reported. Attention is drawn to the application of Cf-252 neutron sources for the field search of neutral resources. For example, a logging sonde for searching uranium resources was developed. the fourth part deals with the application of the analysis with gamma ray by capturing neutrons. For example, a bore hole sonde and the process control analysis of sulfur in fuel utilized capture gamma ray. The prompt gamma ray by capturing neutrons may be used for the nondestructive analysis of enrivonment. (Iwakiri, K.)

Spectral investigation of neutron radiation in three-sectional concrete labyrinth from a californium-252 source

International Nuclear Information System (INIS)

Belogorlov, E.A.; Britvich, G.I.; Getmanov, V.B.

1985-01-01

Construction of labyrinths in points of communication output from the storage-ring under construction is accompanied by numerous difficulties due to a considerable number of gas and cryogenic pipelines, which require large cross sections at the minimal length of the pipelines proper for their location. It results in unfavourable for radiation attenuation ratios between cross section and length of the labyrinth separate sections. Neutron spectra in a model concrete labyrinth, at the entrance to which a neutron source with fission spectrum (californium-252) and the same source in a polyethylene moderator are located, are measured. On the basis of the spectra obtained the formation of fluence and equivalent dose along the labyrinth geometric axis is analyzed. Conditions permitting actually to reduce radiation dose in the labyrinth (dead end provision, the use of cover materials, construction of diaphragms and shielding plates) are simulated

In-plane electronic anisotropy of underdoped '122' Fe-arsenide superconductors revealed by measurements of detwinned single crystals

International Nuclear Information System (INIS)

Fisher, I R; Shen, Z X; Degiorgi, L

2011-01-01

The parent phases of the Fe-arsenide superconductors harbor an antiferromagnetic ground state. Significantly, the Neel transition is either preceded or accompanied by a structural transition that breaks the four-fold symmetry of the high-temperature lattice. Borrowing language from the field of soft condensed matter physics, this broken discrete rotational symmetry is widely referred to as an Ising nematic phase transition. Understanding the origin of this effect is a key component of a complete theoretical description of the occurrence of superconductivity in this family of compounds, motivating both theoretical and experimental investigation of the nematic transition and the associated in-plane anisotropy. Here we review recent experimental progress in determining the intrinsic in-plane electronic anisotropy as revealed by resistivity, reflectivity and angle-resolved photoemission spectroscopy measurements of detwinned single crystals of underdoped Fe-arsenide superconductors in the '122' family of compounds.

In-Plane Electronic Anisotropy of Underdoped ___122___ Fe-Arsenide Superconductors Revealed by Measurements of Detwinned Single Crystals

Energy Technology Data Exchange (ETDEWEB)

Fisher, Ian Randal

2012-05-08

The parent phases of the Fe-arsenide superconductors harbor an antiferromagnetic ground state. Significantly, the Neel transition is either preceded or accompanied by a structural transition that breaks the four fold symmetry of the high-temperature lattice. Borrowing language from the field of soft condensed matter physics, this broken discrete rotational symmetry is widely referred to as an Ising nematic phase transition. Understanding the origin of this effect is a key component of a complete theoretical description of the occurrence of superconductivity in this family of compounds, motivating both theoretical and experimental investigation of the nematic transition and the associated in-plane anisotropy. Here we review recent experimental progress in determining the intrinsic in-plane electronic anisotropy as revealed by resistivity, reflectivity and ARPES measurements of detwinned single crystals of underdoped Fe arsenide superconductors in the '122' family of compounds.

Elastic properties of some transition metal arsenides

Science.gov (United States)

Nayak, Vikas; Verma, U. P.; Bisht, P. S.

2018-05-01

The elastic properties of transition metal arsenides (TMAs) have been studied by employing Wien2K package based on density functional theory in the zinc blende (ZB) and rock salt (RS) phase treating valance electron scalar relativistically. Further, we have also treated them non-relativistically to find out the relativistic effect. We have calculated the elastic properties by computing the volume conservative stress tensor for small strains, using the method developed by Charpin. The obtained results are discussed in paper. From the obtained results, it is clear that the values of C11 > C12 and C44 for all the compounds. The values of shear moduli of these compounds are also calculated. The internal parameter for these compounds shows that ZB structures of these compounds have high resistance against bond order. We find that the estimated elastic constants are in good agreement with the available data.

The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

Science.gov (United States)

Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

2015-05-01

The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, Pmax was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

International Nuclear Information System (INIS)

Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

2015-01-01

The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P max was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs

Ultrafast photocurrents and terahertz radiation in gallium arsenide and carbon based nanostructures

Energy Technology Data Exchange (ETDEWEB)

Prechtel, Hans Leonhard

2011-08-15

In this thesis we developed a measurement technique based on a common pump-probe scheme and coplanar stripline circuits that enables time-resolved photocurrent measurements of contacted nanosystems with a micrometer spatial and a picosecond time resolution. The measurement technique was applied to lowtemperature grown gallium arsenide (LT-GaAs), carbon nanotubes (CNTs), graphene, and p-doped gallium arsenide (GaAs) nanowires. The various mechanisms responsible for the generation of current pulses by pulsed laser excitation were reviewed. Furthermore the propagation of the resulting electromagnetic radiation along a coplanar stripline circuit was theoretically and numerically treated. The ultrafast photocurrent response of low-temperature grown GaAs was investigated. We found two photocurrent pulses in the time-resolved response. We showed that the first pulse is consistent with a displacement current pulse. We interpreted the second pulse to result from a transport current process. We further determined the velocity of the photo-generated charge carriers to exceed the drift, thermal and quantum velocities of single charge carriers. Hereby, we interpreted the transport current pulse to stem from an electron-hole plasma excitation. We demonstrated that the photocurrent response of CNTs comprises an ultrafast displacement current and a transport current. The data suggested that the photocurrent is finally terminated by the recombination lifetime of the charge carriers. To the best of our knowledge, we presented in this thesis the first recombination lifetime measurements of contacted, suspended, CVD grown CNT networks. In addition, we studied the ultrafast photocurrent dynamics of freely suspended graphene contacted by metal electrodes. At the graphene-metal interface, we demonstrated that built-in electric fields give rise to a photocurrent with a full-width-half-maximum of a few picoseconds and that a photo-thermoelectric effect generates a current with a decay time

Use of polyethylene pellets in the design and construction of a storage safe, a transport vessel and a portable shield for californium-252

International Nuclear Information System (INIS)

Sharma, S.

1986-01-01

A storage and shielding facility for 300 μg of Californium-252 sources was designed and constructed. Though the safe was in a permanent location, the fact that it consisted of a lead bucket surrounded by polyethylene pellets made it simple, movable and inexpensive. If need be, more quantities of Cf-252 could be added without altering the basic design and sacrificing the radiation protection guidelines. The measured radiation levels from 300 μg of stored Cf-252 in and around the storage vault were lower than the expected dose rates by a factor of 5. The measured radiation levels around the occupied environs of the facility were below the maximum permissible yearly dose of 500mrem for non-occupational workers. A transport vessel was designed and constructed to carry up to 50 μg of Californium-252 sources. It consisted of a standard 55 gallon steel drum on casters containing cylindrical lead shield surrounded by polyethylene pellets. The measured maximum surface dose rates on the drum and at one meter away were within the radiation protection guidelines and were less than the expected dose rates. A portable shield was designed and constructed to protect the body in afterloading operations and handling of the sources. It consisted of polyethylene pellets in an aluminum box and an attached 10 cm thick plexiglass eye shield. The simple design, with the ease of using polyethylene pellets can be extended to construct bedside shields

Significantly enhanced thermal conductivity of indium arsenide nanowires via sulfur passivation.

Science.gov (United States)

Xiong, Yucheng; Tang, Hao; Wang, Xiaomeng; Zhao, Yang; Fu, Qiang; Yang, Juekuan; Xu, Dongyan

2017-10-16

In this work, we experimentally investigated the effect of sulfur passivation on thermal transport in indium arsenide (InAs) nanowires. Our measurement results show that thermal conductivity can be enhanced by a ratio up to 159% by sulfur passivation. Current-voltage (I-V) measurements were performed on both unpassivated and S-passivated InAs nanowires to understand the mechanism of thermal conductivity enhancement. We observed a remarkable improvement in electrical conductivity upon sulfur passivation and a significant contribution of electrons to thermal conductivity, which account for the enhanced thermal conductivity of the S-passivated InAs nanowires.

Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide

DEFF Research Database (Denmark)

Fiore, A.; Oesterle, U.; Stanley, R.P.

2001-01-01

We present a comprehensive study of the structural and emission properties of self-assembled InAs quantum dots emitting at 1.3 mum. The dots are grown by molecular beam epitaxy on gallium arsenide substrates. Room-temperature emission at 1.3 mum is obtained by embedding the dots in an InGaAs layer...

The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

Energy Technology Data Exchange (ETDEWEB)

Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna [School of Microelectronic Engineering, Universiti Malaysia Perlis, Kampus Pauh Putra, 02600 Arau, Perlis (Malaysia)

2015-05-15

The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

Synchrotron white beam topographic studies of gallium arsenide crystals

International Nuclear Information System (INIS)

Wierzchowski, W.; Wieteska, K.; Graeff, W.

1997-01-01

A series of samples cut out from different types of gallium arsenide crystals with low dislocation density were studied by means of white beam synchrotron topography. The investigation was performed with transmission and black-reflection projection methods and transmission section method. Some of topographs in transmission geometry provided a very high sensitivity suitable for revealing small precipitates. The transmission section images significantly differed depending on the wavelength and absorption. In some cases a distinct Pendelloesung fringes and fine details of dislocation and precipitates images were observed. It was possible to reproduce the character of these images by means of numerical simulation based on integration of Takagi-Taupin equations. Due to more convenient choice of radiation, synchrotron back-reflection projection topography provided much better visibility of dislocations than analogous realized with conventional X-ray sources. (author)

Spin Injection in Indium Arsenide

Directory of Open Access Journals (Sweden)

Mark eJohnson

2015-08-01

Full Text Available In a two dimensional electron system (2DES, coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted this precession would manifest as an oscillation in the source-drain conductance of the channel in a spin-injected field effect transistor (Spin FET. The indium arsenide single quantum well materials system has proven to be ideal for experimental confirmation. The 2DES carriers have high mobility, low sheet resistance, and high spin orbit interaction. Techniques for electrical injection and detection of spin polarized carriers were developed over the last two decades. Adapting the proposed Spin FET to the Johnson-Silsbee nonlocal geometry was a key to the first experimental demonstration of gate voltage controlled coherent spin precession. More recently, a new technique measured the oscillation as a function of channel length. This article gives an overview of the experimental phenomenology of the spin injection technique. We then review details of the application of the technique to InAs single quantum well (SQW devices. The effective magnetic field associated with Rashba spin-orbit coupling is described, and a heuristic model of coherent spin precession is presented. The two successful empirical demonstrations of the Datta Das conductance oscillation are then described and discussed.

Extraction of Trivalent Actinides and Lanthanides from Californium Campaign Rework Solution Using TODGA-based Solvent Extraction System

Energy Technology Data Exchange (ETDEWEB)

Benker, Dennis [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Delmau, Laetitia Helene [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Dryman, Joshua Cory [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2017-07-01

This report presents the studies carried out to demonstrate the possibility of quantitatively extracting trivalent actinides and lanthanides from highly acidic solutions using a neutral ligand-based solvent extraction system. These studies stemmed from the perceived advantage of such systems over cationexchange- based solvent extraction systems that require an extensive feed adjustment to make a low-acid feed. The targeted feed solutions are highly acidic aqueous phases obtained after the dissolution of curium targets during a californium (Cf) campaign. Results obtained with actual Cf campaign solutions, but highly diluted to be manageable in a glove box, are presented, followed by results of tests run in the hot cells with Cf campaign rework solutions. It was demonstrated that a solvent extraction system based on the tetraoctyl diglycolamide molecule is capable of quantitatively extracting trivalent actinides from highly acidic solutions. This system was validated using actual feeds from a Cf campaign.

Neutron activation analysis of the calcium content in vivo, using a 50μg source of californium 252

International Nuclear Information System (INIS)

Guey, A.; Zech, P.Y.; Meary, M.F.; Leitienne, P.

1975-01-01

Owing to the recent commercialisation of californium 252 it is now possible to obtain neutron fluxes strong enough for precise activation of the calcium content of biological targets. After the preliminary measurements necessary to establish the most suitable conditions for irradiating 3 to 5cm thick targets, two parallel sets of experiments were developed. In the first the medium-term total calcium variation was studied in 20 rats, 16 suffering from chronic kidney deficiency. In the second the precision expected as a function of the calcium content of the irradiated target was examined, using 3 sets of tissue equivalent standards of calcium contents 5, 20 and 50g respectively. The first results obtained on calcium 49 in vivo show that a calcium content variation can be followed with a sensitivity threshold below that obtained by conventional methods [fr

Site preference of rare earth doping in palladium-iron-arsenide superconductors

Energy Technology Data Exchange (ETDEWEB)

Stuerzer, Christine; Schulz, Anne; Johrendt, Dirk [Department Chemie, Ludwig-Maximilians-Universitaet Muenchen (Germany)

2014-12-15

The solid solutions (Ca{sub 1-y}RE{sub y}Fe{sub 1-x}Pd{sub x}As){sub 10}Pd{sub z}As{sub 8} with RE = La, Ce, and Pr were synthesized by solid state methods and characterized by X-ray powder diffraction with subsequent Rietveld refinements [(CaFeAs){sub 10}Pt{sub 3}As{sub 8}-type structure (''1038 type''), P anti 1, Z = 1]. Substitution levels (Ca/RE, Fe/Pd, and Pd/□) obtained from Rietveld refinements coincide well with the nominal values according to EDS and the linear courses of the lattice parameters as expected from the ionic radii. The RE atoms favor the one out of five calcium sites, which is eightfold coordinated by arsenic. This leads to significant stabilization of the structure, and especially prevents palladium over-doping in the iron-arsenide layers as observed in the pristine compound (CaFe{sub 1-x}Pd{sub x}As){sub 10}Pd{sub z}As{sub 8}. While the stabilization energy is estimated to about 40 kJ.mol{sup -1} by electronic structure calculations, the reason for the diminished Fe/Pd substitution through RE doping is still not yet understood. We suggest that the electrons transferred from RE{sup 3+} to the (Fe{sub 1-x}Pd{sub x})As layer makes higher palladium concentrations unfavorable. Anyway the reduced palladium doping enables superconductivity with critical temperatures up to 20 K (onset) in the RE doped Pd1038 samples, which could not be obtained earlier due to palladium over-doping in the active iron-arsenide layers. (Copyright copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Use of californium-252 neutron irradiator for in-vivo analysis of the bone calcium content of the hand

International Nuclear Information System (INIS)

Guey, A.; Leitienne, P.; Zech, P.Y.; Traeger, J.; Doyen, J.B.; Breton, J.P.

1979-01-01

With californium-252 it is easy to obtain a high neutron flux of the order of 10 9 n/s. The mean energy of this radiation, which is close on 2 MeV, activates calcium very well. The authors describe a storage and irradiator unit with a 100 μg californium source, with which it will henceforth be possible to develop this technique of measuring the calcium of the hand in a hospital. The test programme has three distinct phases: (1) irradiation of the biological target for 10 min; (2) after a transfer period of 30 s, detection of the radiation emitted by the 49 Ca for 600 s; (3) processing of the numerical data received, which are transmitted on line to a T 1600 calculator. The weight is found by comparing the activity induced in the unknown calcium mass with that induced in a phantom chosen as the activity standard. The reproducibility of the method is of the order of 3% (5% at the worst). The gross standardized result is edited automatically. For physical and clinical reasons, the hand is chosen as the reference part of the body in 70 control subjects. The local irradiation dose is less than 2 rem. The bone calcium content is 14.3+-1.9 g in men and 10.1+-1.3 g in women. In clinical application of the technique it is necessary to differentiate between the normal calcium content and the calcium content found with a pathological state. This makes it necessary to express the measurement in the form of a volume mass (rho). The volume of the hand skeleton (V in cm 3 ) is calculated from the corresponding bone surface (S in cm 2 ) measured by planimetry with the relationship V=8.925 exp 0.0205.S, found after studying 80 hand skeletons. In our control subjects the calcium bone volume mass was 0.288 g/cm 3 in men and 0.282 g/cm 3 in women. There is a very significant difference (p<0.001) in a population of 88 subjects with chronic renal insufficiencies at the terminal stage: rho=0.233 in men and 0.235 in women

Point defects in gallium arsenide characterized by positron annihilation spectroscopy and deep level transient spectroscopy

International Nuclear Information System (INIS)

Mih, R.; Gronsky, R.; Sterne, P.A.

1995-01-01

Positron annihilation lifetime spectroscopy (PALS) is a unique technique for detection of vacancy related defects in both as-grown and irradiated materials. The authors present a systematic study of vacancy defects in stoichiometrically controlled p-type Gallium Arsenide grown by the Hot-Wall Czochralski method. Microstructural information based on PALS, was correlated to crystallographic data and electrical measurements. Vacancies were detected and compared to electrical levels detected by deep level transient spectroscopy and stoichiometry based on crystallographic data

Simulation and design of an electron beam ion source charge breeder for the californium rare isotope breeder upgrade

Directory of Open Access Journals (Sweden)

Clayton Dickerson

2013-02-01

Full Text Available An electron beam ion source (EBIS will be constructed and used to charge breed ions from the californium rare isotope breeder upgrade (CARIBU for postacceleration into the Argonne tandem linear accelerator system (ATLAS. Simulations of the EBIS charge breeder performance and the related ion transport systems are reported. Propagation of the electron beam through the EBIS was verified, and the anticipated incident power density within the electron collector was identified. The full normalized acceptance of the charge breeder with a 2 A electron beam, 0.024π  mm mrad for nominal operating parameters, was determined by simulating ion injection into the EBIS. The optics of the ion transport lines were carefully optimized to achieve well-matched ion injection, to minimize emittance growth of the injected and extracted ion beams, and to enable adequate testing of the charge bred ions prior to installation in ATLAS.

Long-term effects of an intracavitary treatment with californium-252 on normal tissue

International Nuclear Information System (INIS)

Sullivan, M.F.; Beamer, J.L.; Mahony, T.D.; Cross, F.T.; Lund, J.E.; Endres, G.W.R.

1976-01-01

About one hundred fifty swine were exposed to either radium-226 or californium-252 sources in the uterine cervix to determine an RBE for both acute and long-term effects. That value for early changes in the tissues at risk in the treatment of cervical cancer was between 6.2 and 6.8. The incidence of complications increased with time after exposure, especially among animals treated with 252 Cf. Analysis of rectal injury showed that ulceration occurred frequently within a year postexposure at doses between 1600 and 2400 rad calculated at 2 cm lateral to the source midline. Fat necrosis and smooth muscle atrophy, resulting in a local rectal stricture, were delayed changes observed in some animals. The lower ureter was the site for a greater frequency of complications than the GI tract. Ureteral stricture often occurred at doses of 1200 rad from 252 Cf and 7000 rad from 226 Ra. Observation of delayed effects in the uterine-cervix in animals held up to 4 years postexposure indicate that the RBE for 252 Cf may be increased to a value as high as 18, while repair may have even decreased it to about 5.6 in the rectum. Fifty swine are still being observed for long-term effects after doses above 800 rad from 252 Cf and 5000 rad from 226 Ra

Precision calibration of the silicon doping level in gallium arsenide epitaxial layers

Science.gov (United States)

Mokhov, D. V.; Berezovskaya, T. N.; Kuzmenkov, A. G.; Maleev, N. A.; Timoshnev, S. N.; Ustinov, V. M.

2017-10-01

An approach to precision calibration of the silicon doping level in gallium arsenide epitaxial layers is discussed that is based on studying the dependence of the carrier density in the test GaAs layer on the silicon- source temperature using the Hall-effect and CV profiling techniques. The parameters are measured by standard or certified measuring techniques and approved measuring instruments. It is demonstrated that the use of CV profiling for controlling the carrier density in the test GaAs layer at the thorough optimization of the measuring procedure ensures the highest accuracy and reliability of doping level calibration in the epitaxial layers with a relative error of no larger than 2.5%.

Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides

Directory of Open Access Journals (Sweden)

A. Schlechte, R. Niewa, M. Schmidt, G. Auffermann, Yu. Prots, W. Schnelle, D. Gnida, T. Cichorek, F. Steglich and R. Kniep

2007-01-01

Full Text Available Ternary phases in the systems Zr–As–Se and Zr–As–Te were studied using single crystals of ZrAs1.40(1Se0.50(1 and ZrAs1.60(2Te0.40(1 (PbFCl-type of structure, space group P4/nmm as well as ZrAs0.70(1Se1.30(1 and ZrAs0.75(1Te1.25(1 (NbPS-type of structure, space group Immm. The characterization covers chemical compositions, crystal structures, homogeneity ranges and electrical resistivities. At 1223 K, the Te-containing phases can be described with the general formula ZrAsxTe2−x, with 1.53(1≤x≤1.65(1 (As-rich and 0.58(1≤x≤0.75(1 (Te-rich. Both phases are located directly on the tie-line between ZrAs2 and ZrTe2, with no indication for any deviation. Similar is true for the Se-rich phase ZrAsxSe2−x with 0.70(1≤x≤0.75(1. However, the compositional range of the respective As-rich phase ZrAsx−ySe2−x (0.03(1≤y≤0.10(1; 1.42(1≤x≤1.70(1 is not located on the tie-line ZrAs2–ZrSe2, and exhibits a triangular region of existence with intrinsic deviation of the composition towards lower non-metal contents. Except for ZrAs0.75Se1.25, from the homogeneity range of the Se-rich phase, all compounds under investigation show metallic characteristics of electrical resistivity at temperatures >20 K. Related uranium and thorium arsenide selenides display a typical magnetic field-independent rise of the resistivity towards lower temperatures, which has been explained by a non-magnetic Kondo effect. However, a similar observation has been made for ZrAs1.40Se0.50, which, among the Zr-based arsenide chalcogenides, is the only system with a large concentration of intrinsic defects in the anionic substructure.

Maskless proton beam writing in gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Mistry, P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom) and Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom)]. E-mail: p.mistry@surrey.ac.uk; Gomez-Morilla, I. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Smith, R.C. [Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Thomson, D. [Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Grime, G.W. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Webb, R.P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Gwilliam, R. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Jeynes, C. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Cansell, A. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Merchant, M. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Kirkby, K.J. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom)

2007-07-15

Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed.

Maskless proton beam writing in gallium arsenide

International Nuclear Information System (INIS)

Mistry, P.; Gomez-Morilla, I.; Smith, R.C.; Thomson, D.; Grime, G.W.; Webb, R.P.; Gwilliam, R.; Jeynes, C.; Cansell, A.; Merchant, M.; Kirkby, K.J.

2007-01-01

Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed

Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

Directory of Open Access Journals (Sweden)

Ramon M. delos Santos

2008-06-01

Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

Feasibility and market potential of protein determination of wheat using californium-252

International Nuclear Information System (INIS)

Roberts, T.C. Jr.; Eckhoff, N.D.; Clack, R.W.; Roberts, T.C. Sr.

1976-01-01

To evaluate the feasibility of protein determination by capture gamma-ray analysis using californium-252 neutrons, an in-situ protein analysis system for use by grain handlers has been examined. Three 227 kilogram (approximately) lots of wheat were used to determine the amount of nitrogen present. Protein analyses by the Kjeldahl method were obtained from samples taken before and after the capture gamma-ray analyses. The 5.267-MeV gamma-ray was selected for use in this study as a compromise between efficiency and interference from other elements. The associated counting equipment was a multichannel analyzer with pulse shaping electronic and analysis computing equipment. A linear regression program was used to compare the regions of interest to the Kjeldahl protein averages. The counts composing each peak were summed and normalized using the total count of the hydrogen peak. The normalized nitrogen percentages indicate a significant correlation between the spectral regions and the Kjeldahl analyses. To a first approximation, the value of wheat is the wheat protein. At the present time, protein testing of wheat is destructive, cumbersome, and time-consuming as compared to the potential for capture gamma-ray analysis testing. Assuming that such a protein analysis unit can analyze 42 tonne of wheat per hour, over 120 units would be needed to monitor one-half the U.S. annual wheat production. A 0.5% improvement in processor realizations and grain throughput value of $167.00 per tonne will result in a projected savings of $150,000 per year per unit

Solubility of platinum-arsenide melt and sperrylite in synthetic basalt at 0.1 MPa and 1200 °C with implications for arsenic speciation and platinum sequestration in mafic igneous systems

Science.gov (United States)

Canali, A. C.; Brenan, J. M.; Sullivan, N. A.

2017-11-01

To better understand the Pt-As association in natural magmas, experiments were done at 1200 °C and 0.1 MPa to measure the solubility of Pt and Pt-arsenide phases (melt and sperrylite, PtAs2), as well as to determine the oxidation state, and identify evidence for Pt-As complexing, in molten silicate. Samples consisting of synthetic basalt contained in chromite crucibles were subject to three experimental procedures. In the first, platinum solubility in the synthetic basalt was determined without added arsenic by equilibrating the sample with a platinum source (embedded wire or bead) in a gas-mixing furnace. In the second, the sample plus a Pt-arsenide source was equilibrated in a vacuum-sealed fused quartz tube containing a solid-oxide oxygen buffer. The third approach involved two steps: first equilibrating the sample in a gas-mixing furnace, then with added arsenide melt in a sealed quartz tube. Oxygen fugacity was estimated in the latter step using chromite/melt partitioning of vanadium. Method two experiments done at high initial arsenic activity (PtAs melt + PtAs2), showed significant loss of arsenic from the sample, the result of vapour transfer to newly-formed arsenide phases in the buffer. Method three experiments showed no loss of arsenic, yielding a uniform final distribution in the sample. Analyses of run-product glasses from experiments which did not show arsenic loss reveal significant increase in arsenic concentrations with fO2, varying from ∼10 ppm (FMQ-3.25) to >10,000 ppm (FMQ + 5.5). Despite very high arsenic loadings (>1000 ppm), the solubility of Pt is similar in arsenic-bearing and arsenic-free glasses. The variation in arsenic solubility with fO2 shows a linear relationship, that when corrected for the change in the activity of dissolved arsenic with the melt ferric/ferrous ratio, yields a solubility-fO2 relationship consistent with As3+ as the dissolved species. This result is confirmed by X-ray absorption near edge structure (XANES

Manganese determination om minerals by activation analysis, using the californium-252 as a neutron source

International Nuclear Information System (INIS)

Cardoso, Antonio

1976-01-01

Neutron Activation Analysis, using a Californium-252 neutron source, has been applied for the determination of manganese in ores such as pyrolusite, rodonite (manganese silicate)' and blending used in dry-batteries The favorable nuclear properties of manganese, such as high thermal neutron cross-section for the reaction 55 Mn (n.gamma) 56 Mn, high concentration of manganese in the matrix and short half - life of 56 Mn, are an ideal combination for non-destructive analysis of manganese in ores. Samples and standards of manganese dioxide were irradiated for about 20 minutes, followed by a 4 to 15 minutes decay and counted in a single channel pulse-height discrimination using a NaI(Tl) scintillation detector. Counting time was equal to 10 minutes. The interference of nuclear reactions 56 Fe(n,p) 56 Mn and 59 Co (n, α) 56 were studied, as well as problems in connection with neutron shadowing during irradiation, gamma-rays attenuation during counting and influence of granulometry of samples. One sample,was also analysed by wet-chemical method (sodium bismuthate) in order to compare results. As a whole, i t was shown that the analytical method of neutron activation for manganese in ores and blending, is a method simple, rapid and with good precision and accuracy. (author)

Quantum oscillations in the parent magnetic phase of an iron arsenide high temperature superconductor

International Nuclear Information System (INIS)

Sebastian, Suchitra E; Gillett, J; Lau, P H C; Lonzarich, G G; Harrison, N; Mielke, C H; Singh, D J

2008-01-01

We report measurements of quantum oscillations in SrFe 2 As 2 -which is an antiferromagnetic parent of the iron arsenide family of superconductors-known to become superconducting under doping and the application of pressure. The magnetic field and temperature dependences of the oscillations between 20 and 55 T in the liquid helium temperature range suggest that the electronic excitations are those of a Fermi liquid. We show that the observed Fermi surface comprising small pockets is consistent with the formation of a spin-density wave. Our measurements thus demonstrate that high T c superconductivity can occur on doping or pressurizing a conventional metallic spin-density wave state. (fast track communication)

Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems

Science.gov (United States)

Bhasin, K. B.; Connolly, D. J.

1986-01-01

Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.

Direct observation of the orbital spin Kondo effect in gallium arsenide quantum dots

Science.gov (United States)

Shang, Ru-Nan; Zhang, Ting; Cao, Gang; Li, Hai-Ou; Xiao, Ming; Guo, Guang-Can; Guo, Guo-Ping

2018-02-01

Besides the spin Kondo effect, other degrees of freedom can give rise to the pseudospin Kondo effect. We report a direct observation of the orbital spin Kondo effect in a series-coupled gallium arsenide (GaAs) double quantum dot device where orbital degrees act as pseudospin. Electron occupation in both dots induces a pseudospin Kondo effect. In a region of one net spin impurity, complete spectra with three resonance peaks are observed. Furthermore, we observe a pseudo-Zeeman effect and demonstrate its electrical controllability for the artificial pseudospin in this orbital spin Kondo process via gate voltage control. The fourfold degeneracy point is realized at a specific value supplemented by spin degeneracy, indicating a transition from the SU(2) to the SU(4) Kondo effect.

Revealing the optoelectronic and thermoelectric properties of the Zintl quaternary arsenides ACdGeAs{sub 2} (A = K, Rb)

Energy Technology Data Exchange (ETDEWEB)

Azam, Sikander; Khan, Saleem Ayaz [New Technologies—Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Goumri-Said, Souraya, E-mail: Souraya.Goumri-Said@chemistry.gatech.edu [School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400 (United States)

2015-10-15

Highlights: • Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) are chalcopyrite and semiconductors. • Their direct band gap is suitable for PV, optolectronic and thermoelectric applications. • Combination of DFT and Boltzmann transport theory is employed. • The present arsenides are found to be covalent materials. - Abstract: Chalcopyrite semiconductors have attracted much attention due to their potential implications in photovoltaic and thermoelectric applications. First principle calculations were performed to investigate the electronic, optical and thermoelectric properties of the Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) using the full potential linear augmented plane wave method and the Engle–Vosko GGA (EV–GGA) approximation. The present compounds are found semiconductors with direct band gap and covalent bonding character. The optical transitions are investigated via the dielectric function (real and imaginary parts) along with other related optical constants including refractive index, reflectivity and energy-loss spectrum. Combining results from DFT and Boltzmann transport theory, we reported the thermoelectric properties such as the Seebeck’s coefficient, electrical and thermal conductivity, figure of merit and power factor as function of temperatures. The present chalcopyrite Zintl quaternary arsenides deserve to be explored for their potential applications as thermoelectric materials and for photovoltaic devices.

Damage structure of gallium arsenide irradiated in a high-voltage electron microscope

International Nuclear Information System (INIS)

Loretto, D.; Loretto, M.H.

1989-01-01

Semi-insulating undoped gallium arsenide has been irradiated in a high-voltage electron microscope between room temperature and about 500 0 C for doses of up to 5 x 10 22 electrons cm -2 at 1 MeV. Room-temperature irradiation produces small (less than 5 nm) damage clusters. As the temperature of the irradiation is increased, the size of these clusters increases, until at about 300 0 C a high density of dislocation loops can be resolved. The dislocation loops, 20 nm or less in diameter, which are produced at about 500 0 C have been analysed in a bright field using a two-beam inside-outside method which minimises the tilt necessary between micrographs. It is concluded that the loops are an interstitial perfect-edge type with a Burgers vector of (a/2) . (author)

Determination of frequencies of atomic oscillations along the fourth order symmetry axis in indium arsenide according to thermal diffusion scattering of X-rays

International Nuclear Information System (INIS)

Orlova, N.S.

1978-01-01

Intensity of diffusion scattering of X-rays from the plane of a monocrystal of indium arsenide has been measured on the monochromatized CuKsub(α)-radiation. The samples are made of Cl indium arsenide monocrystal of the n-type with the 1x10 18 cm -3 concentration of carriers in the form of a plate with the polished parallel cut-off with the +-5' accuracy. The investigations have been carried out on the URS-5 IM X-ray diffractometer at room temperature in vacuum. Intensities of thermal diffusion scattering of the second order have been calculated by the two-atomic chain model with different mass and four interaction paramaters. Based upon the analysis of intensity of single-phonon diffusion scattering the curves of frequencies of atomic oscillations along the direction [100] have been determined. The values of frequencies obtained experimentally on the thermal diffusion scattering of X-rays are in a satisfactory agreement with the calculated data. The frequencies obtained are compared with the results of calculation and the analysis of multiphonon spectra of IR-absorption made elsewhere

Phase diagram of (Li(1-x)Fe(x))OHFeSe: a bridge between iron selenide and arsenide superconductors.

Science.gov (United States)

Dong, Xiaoli; Zhou, Huaxue; Yang, Huaixin; Yuan, Jie; Jin, Kui; Zhou, Fang; Yuan, Dongna; Wei, Linlin; Li, Jianqi; Wang, Xinqiang; Zhang, Guangming; Zhao, Zhongxian

2015-01-14

Previous experimental results have shown important differences between iron selenide and arsenide superconductors which seem to suggest that the high-temperature superconductivity in these two subgroups of iron-based families may arise from different electronic ground states. Here we report the complete phase diagram of a newly synthesized superconducting (SC) system, (Li1-xFex)OHFeSe, with a structure similar to that of FeAs-based superconductors. In the non-SC samples, an antiferromagnetic (AFM) spin-density-wave (SDW) transition occurs at ∼127 K. This is the first example to demonstrate such an SDW phase in an FeSe-based superconductor system. Transmission electron microscopy shows that a well-known √5×√5 iron vacancy ordered state, resulting in an AFM order at ∼500 K in AyFe2-xSe2 (A = metal ions) superconductor systems, is absent in both non-SC and SC samples, but a unique superstructure with a modulation wave vector q = (1)/2(1,1,0), identical to that seen in the SC phase of KyFe2-xSe2, is dominant in the optimal SC sample (with an SC transition temperature Tc = 40 K). Hence, we conclude that the high-Tc superconductivity in (Li1-xFex)OHFeSe stems from the similarly weak AFM fluctuations as FeAs-based superconductors, suggesting a universal physical picture for both iron selenide and arsenide superconductors.

Semiconducting icosahedral boron arsenide crystal growth for neutron detection

Science.gov (United States)

Whiteley, C. E.; Zhang, Y.; Gong, Y.; Bakalova, S.; Mayo, A.; Edgar, J. H.; Kuball, M.

2011-03-01

Semiconducting icosahedral boron arsenide, B12As2, is an excellent candidate for neutron detectors, thermoelectric converters, and radioisotope batteries, for which high quality single crystals are required. Thus, the present study was undertaken to grow B12As2 crystals by precipitation from metal solutions (nickel) saturated with elemental boron (or B12As2 powder) and arsenic in a sealed quartz ampoule. B12As2 crystals of 10-15 mm were produced when a homogeneous mixture of the three elements was held at 1150 °C for 48-72 h and slowly cooled (3.5 °C/h). The crystals varied in color and transparency from black and opaque to clear and transparent. X-ray topography (XRT), and elemental analysis by energy dispersive X-ray spectroscopy (EDS) confirmed that the crystals had the expected rhombohedral structure and chemical stoichiometry. The concentrations of residual impurities (nickel, carbon, etc.) were low, as measured by Raman spectroscopy and secondary ion mass spectrometry (SIMS). Additionally, low etch-pit densities (4.4×107 cm-2) were observed after etching in molten KOH at 500 °C. Thus, the flux growth method is viable for growing large, high-quality B12As2 crystals.

Seeded growth of boron arsenide single crystals with high thermal conductivity

Science.gov (United States)

Tian, Fei; Song, Bai; Lv, Bing; Sun, Jingying; Huyan, Shuyuan; Wu, Qi; Mao, Jun; Ni, Yizhou; Ding, Zhiwei; Huberman, Samuel; Liu, Te-Huan; Chen, Gang; Chen, Shuo; Chu, Ching-Wu; Ren, Zhifeng

2018-01-01

Materials with high thermal conductivities are crucial to effectively cooling high-power-density electronic and optoelectronic devices. Recently, zinc-blende boron arsenide (BAs) has been predicted to have a very high thermal conductivity of over 2000 W m-1 K-1 at room temperature by first-principles calculations, rendering it a close competitor for diamond which holds the highest thermal conductivity among bulk materials. Experimental demonstration, however, has proved extremely challenging, especially in the preparation of large high quality single crystals. Although BAs crystals have been previously grown by chemical vapor transport (CVT), the growth process relies on spontaneous nucleation and results in small crystals with multiple grains and various defects. Here, we report a controllable CVT synthesis of large single BAs crystals (400-600 μm) by using carefully selected tiny BAs single crystals as seeds. We have obtained BAs single crystals with a thermal conductivity of 351 ± 21 W m-1 K-1 at room temperature, which is almost twice as conductive as previously reported BAs crystals. Further improvement along this direction is very likely.

Study of Gallium Arsenide Etching in a DC Discharge in Low-Pressure HCl-Containing Mixtures

Science.gov (United States)

Dunaev, A. V.; Murin, D. B.

2018-04-01

Halogen-containing plasmas are often used to form topological structures on semiconductor surfaces; therefore, spectral monitoring of the etching process is an important diagnostic tool in modern electronics. In this work, the emission spectra of gas discharges in mixtures of hydrogen chloride with argon, chlorine, and hydrogen in the presence of a semiconducting gallium arsenide plate were studied. Spectral lines and bands of the GaAs etching products appropriate for monitoring the etching rate were determined. It is shown that the emission intensity of the etching products is proportional to the GaAs etching rate in plasmas of HCl mixtures with Ar and Cl2, which makes it possible to monitor the etching process in real time by means of spectral methods.

Normal vibrations in gallium arsenide

International Nuclear Information System (INIS)

Dolling, G.; Waugh, J.L.T.

1964-01-01

The triple axis crystal spectrometer at Chalk River has been used to observe coherent slow neutron scattering from a single crystal of pure gallium arsenide at 296 o K. The frequencies of normal modes of vibration propagating in the [ζ00], (ζζζ], and (0ζζ] crystal directions have been determined with a precision of between 1 and 2·5 per cent. A limited number of normal modes have also been studied at 95 and 184 o K. Considerable difficulty was experienced in obtaining welt resolved neutron peaks corresponding to the two non-degenerate optic modes for very small wave-vector, particularly at 296 o K. However, from a comparison of results obtained under various experimental conditions at several different points in reciprocal space, frequencies (units 10 12 c/s) for these modes (at 296 o K) have been assigned: T 8·02±0·08 and L 8·55±02. Other specific normal modes, with their measured frequencies are (a) (1,0,0): TO 7·56 ± 008, TA 2·36 ± 0·015, LO 7·22 ± 0·15, LA 6·80 ± 0·06; (b) (0·5, 0·5, 0·5): TO 7·84 ± 0·12, TA 1·86 ± 0·02, LO 7·15 ± 0·07, LA 6·26 ± 0·10; (c) (0, 0·65, 0·65): optic 8·08 ±0·13, 7·54 ± 0·12 and 6·57 ± 0·11, acoustic 5·58 ± 0·08, 3·42 · 0·06 and 2·36 ± 004. These results are generally slightly lower than the corresponding frequencies for germanium. An analysis in terms of various modifications of the dipole approximation model has been carried out. A feature of this analysis is that the charge on the gallium atom appears to be very small, about +0·04 e. The frequency distribution function has been derived from one of the force models. (author)

Long-term effects of an intracavitary treatment with californium-252 on normal tissue. [Swine, /sup 226/Ra

Energy Technology Data Exchange (ETDEWEB)

Sullivan, M.F.; Beamer, J.L.; Mahony, T.D.; Cross, F.T.; Lund, J.E.; Endres, G.W.R.

1976-01-01

About one hundred fifty swine were exposed to either radium-226 or californium-252 sources in the uterine cervix to determine an RBE for both acute and long-term effects. That value for early changes in the tissues at risk in the treatment of cervical cancer was between 6.2 and 6.8. The incidence of complications increased with time after exposure, especially among animals treated with /sup 252/Cf. Analysis of rectal injury showed that ulceration occurred frequently within a year postexposure at doses between 1600 and 2400 rad calculated at 2 cm lateral to the source midline. Fat necrosis and smooth muscle atrophy, resulting in a local rectal stricture, were delayed changes observed in some animals. The lower ureter was the site for a greater frequency of complications than the GI tract. Ureteral stricture often occurred at doses of 1200 rad from /sup 252/Cf and 7000 rad from /sup 226/Ra. Observation of delayed effects in the uterine-cervix in animals held up to 4 years postexposure indicate that the RBE for /sup 252/Cf may be increased to a value as high as 18, while repair may have even decreased it to about 5.6 in the rectum. Fifty swine are still being observed for long-term effects after doses above 800 rad from /sup 252/Cf and 5000 rad from /sup 226/Ra.

Fast and efficient charge breeding of the Californium rare isotope breeder upgrade electron beam ion source

International Nuclear Information System (INIS)

Ostroumov, P. N.; Barcikowski, A.; Dickerson, C. A.; Perry, A.; Sharamentov, S. I.; Vondrasek, R. C.; Zinkann, G. P.; Pikin, A. I.

2015-01-01

The Electron Beam Ion Source (EBIS), developed to breed Californium Rare Isotope Breeder Upgrade (CARIBU) radioactive beams at Argonne Tandem Linac Accelerator System (ATLAS), is being tested off-line. A unique property of the EBIS is a combination of short breeding times, high repetition rates, and a large acceptance. Overall, we have implemented many innovative features during the design and construction of the CARIBU EBIS as compared to the existing EBIS breeders. The off-line charge breeding tests are being performed using a surface ionization source that produces singly charged cesium ions. The main goal of the off-line commissioning is to demonstrate stable operation of the EBIS at a 10 Hz repetition rate and a breeding efficiency into single charge state higher than 15%. These goals have been successfully achieved and exceeded. We have measured (20% ± 0.7%) breeding efficiency into the single charge state of 28+ cesium ions with the breeding time of 28 ms. In general, the current CARIBU EBIS operational parameters can provide charge breeding of any ions in the full mass range of periodic table with high efficiency, short breeding times, and sufficiently low charge-to-mass ratio, 1/6.3 for the heaviest masses, for further acceleration in ATLAS. In this paper, we discuss the parameters of the EBIS and the charge breeding results in a pulsed injection mode with repetition rates up to 10 Hz

Neutron flux characterization of californium-252 Neutron Research Facility at the University of Texas - Pan American by nuclear analytical technique

Science.gov (United States)

Wahid, Kareem; Sanchez, Patrick; Hannan, Mohammad

2014-03-01

In the field of nuclear science, neutron flux is an intrinsic property of nuclear reaction facilities that is the basis for experimental irradiation calculations and analysis. In the Rio Grande Valley (Texas), the UTPA Neutron Research Facility (NRF) is currently the only neutron facility available for experimental research purposes. The facility is comprised of a 20-microgram californium-252 neutron source surrounded by a shielding cascade containing different irradiation cavities. Thermal and fast neutron flux values for the UTPA NRF have yet to be fully investigated and may be of particular interest to biomedical studies in low neutron dose applications. Though a variety of techniques exist for the characterization of neutron flux, neutron activation analysis (NAA) of metal and nonmetal foils is a commonly utilized experimental method because of its detection sensitivity and availability. The aim of our current investigation is to employ foil activation in the determination of neutron flux values for the UTPA NSRF for further research purposes. Neutron spectrum unfolding of the acquired experimental data via specialized software and subsequent comparison for consistency with computational models lends confidence to the results.

High field electron-spin transport and observation of the Dyakonov-Perel spin relaxation of drifting electrons in low temperature-grown gallium arsenide

International Nuclear Information System (INIS)

Miah, M. Idrish

2008-01-01

High field electron-spin transport in low temperature-grown gallium arsenide is studied. We generate electron spins in the samples by optical pumping. During transport, we observe the Dyakonov-Perel (DP) [M.I. Dyakonov, V.I. Perel, Zh. Eksp. Teor. Fiz. 60 (1971) 1954] spin relaxation of the drifting electrons. The results are discussed and are compared with those obtained in calculations of the DP spin relaxation frequency of the hot electrons. A good agreement is obtained

High field electron-spin transport and observation of the Dyakonov-Perel spin relaxation of drifting electrons in low temperature-grown gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong-4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au

2008-11-17

High field electron-spin transport in low temperature-grown gallium arsenide is studied. We generate electron spins in the samples by optical pumping. During transport, we observe the Dyakonov-Perel (DP) [M.I. Dyakonov, V.I. Perel, Zh. Eksp. Teor. Fiz. 60 (1971) 1954] spin relaxation of the drifting electrons. The results are discussed and are compared with those obtained in calculations of the DP spin relaxation frequency of the hot electrons. A good agreement is obtained.

Photodetectors based on carbon nanotubes deposited by using a spray technique on semi-insulating gallium arsenide

Directory of Open Access Journals (Sweden)

Domenico Melisi

2014-11-01

Full Text Available In this paper, a spray technique is used to perform low temperature deposition of multi-wall carbon nanotubes on semi-insulating gallium arsenide in order to obtain photodectors. A dispersion of nanotube powder in non-polar 1,2-dichloroethane is used as starting material. The morphological properties of the deposited films has been analysed by means of electron microscopy, in scanning and transmission mode. Detectors with different layouts have been prepared and current–voltage characteristics have been recorded in the dark and under irradiation with light in the range from ultraviolet to near infrared. The device spectral efficiency obtained from the electrical characterization is finally reported and an improvement of the photodetector behavior due to the nanotubes is presented and discussed.

Selectivity control of photosensitive structures based on gallium arsenide phosphide solid solutions by changing the rate of surface recombination

International Nuclear Information System (INIS)

Tarasov, S A; Andreev, M Y; Lamkin, I A; Solomonov, A V

2016-01-01

In this paper, we demonstrate the effect of surface recombination on spectral sensitivity of structures based on gallium arsenide phosphide solid solutions. Simulation of the effect for structures based on a p-n junction and a Schottky barrier was carried out. Photodetectors with different rates of surface recombination were fabricated by using different methods of preliminary treatment of the semiconductor surface. We experimentally demonstrated the possibility to control photodetector selectivity by altering the rate of surface recombination. The full width at half maximum was reduced by almost 4 times, while a relatively small decrease in sensitivity at the maximum was observed. (paper)

Normal vibrations in gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Dolling, G; Waugh, J L T

1964-07-01

The triple axis crystal spectrometer at Chalk River has been used to observe coherent slow neutron scattering from a single crystal of pure gallium arsenide at 296{sup o}K. The frequencies of normal modes of vibration propagating in the [{zeta}00], ({zeta}{zeta}{zeta}], and (0{zeta}{zeta}] crystal directions have been determined with a precision of between 1 and 2{center_dot}5 per cent. A limited number of normal modes have also been studied at 95 and 184{sup o}K. Considerable difficulty was experienced in obtaining welt resolved neutron peaks corresponding to the two non-degenerate optic modes for very small wave-vector, particularly at 296{sup o}K. However, from a comparison of results obtained under various experimental conditions at several different points in reciprocal space, frequencies (units 10{sup 12} c/s) for these modes (at 296{sup o}K) have been assigned: T 8{center_dot}02{+-}0{center_dot}08 and L 8{center_dot}55{+-}02. Other specific normal modes, with their measured frequencies are (a) (1,0,0): TO 7{center_dot}56 {+-} 008, TA 2{center_dot}36 {+-} 0{center_dot}015, LO 7{center_dot}22 {+-} 0{center_dot}15, LA 6{center_dot}80 {+-} 0{center_dot}06; (b) (0{center_dot}5, 0{center_dot}5, 0{center_dot}5): TO 7{center_dot}84 {+-} 0{center_dot}12, TA 1{center_dot}86 {+-} 0{center_dot}02, LO 7{center_dot}15 {+-} 0{center_dot}07, LA 6{center_dot}26 {+-} 0{center_dot}10; (c) (0, 0{center_dot}65, 0{center_dot}65): optic 8{center_dot}08 {+-}0{center_dot}13, 7{center_dot}54 {+-} 0{center_dot}12 and 6{center_dot}57 {+-} 0{center_dot}11, acoustic 5{center_dot}58 {+-} 0{center_dot}08, 3{center_dot}42 {center_dot} 0{center_dot}06 and 2{center_dot}36 {+-} 004. These results are generally slightly lower than the corresponding frequencies for germanium. An analysis in terms of various modifications of the dipole approximation model has been carried out. A feature of this analysis is that the charge on the gallium atom appears to be very small, about +0{center_dot}04 e. The

The roles of the temperature on the structural and electronic properties of deep-level V{sub As}V{sub Ga} defects in gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Ma, Deming, E-mail: xautmdm@163.com; Chen, Xi; Qiao, Hongbo; Shi, Wei; Li, Enling

2015-07-15

Highlights: • The energy gap of the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} is 0.82 eV. • Proves that the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} belongs to EL2 deep-level defect in GaAs. • Proves that EL2 and EL6 deep-level defects can transform into each other. • Temperature has an important effect on the microstructure of deep-level defects. - Abstract: The roles of temperature on the structural and electronic properties of V{sub As}V{sub Ga} defects in gallium arsenide have been studied by using ab-initio molecular dynamic (MD) simulation. Our calculated results show that the relatively stable quaternary complex defect of Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} can be converted from the V{sub As}V{sub Ga} complex clusters defect between 300 K and 1173 K; however, from 1173 K to 1373 K, the decomposition of the complex defect Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} occurs, turning into a deep-level V{sub As}V{sub Ga} cluster defect and an isolated As{sub Ga} antisite defect, and relevant defect of Ga{sub As} is recovered. The properties of Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} defect has been studied by first-principles calculations based on hybrid density functional theory. Our calculated results show that the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} belongs to EL2 deep-level defect in GaAs. Thus, we reveal that the temperature has an important effect on the microstructure of deep-level defects and defect energy level in gallium arsenide that EL2 and EL6 deep-level defects have a certain correlation, which means they could transform into each other. Controlling temperature in the growth process of GaAs could change the microstructure of deep-level defects and defect energy levels in gallium arsenide materials, whereby affects the electron transport properties of materials.

Modelling of the small pixel effect in gallium arsenide X-ray imaging detectors

CERN Document Server

Sellin, P J

1999-01-01

A Monte Carlo simulation has been carried out to investigate the small pixel effect in highly pixellated X-ray imaging detectors fabricated from semi-insulating gallium arsenide. The presence of highly non-uniform weighting fields in detectors with a small pixel geometry causes the majority of the induced signal to be generated when the moving charges are close to the pixellated contacts. The response of GaAs X-ray imaging detectors is further complicated by the presence of charge trapping, particularly of electrons. In this work detectors are modelled with a pixel pitch of 40 and 150 mu m, and with thicknesses of 300 and 500 mu m. Pulses induced in devices with 40 mu m pixels are due almost totally to the movement of the lightly-trapped holes and can exhibit significantly higher charge collection efficiencies than detectors with large electrodes, in which electron trapping is significant. Details of the charge collection efficiencies as a function of interaction depth in the detector and of the incident phot...

Study of current instabilities in high resistivity gallium arsenide; Etude des instabilites de courant dans l'arseniure de gallium de haute resistivite

Energy Technology Data Exchange (ETDEWEB)

Barraud, A [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1968-07-01

We have shown the existence and made a study of the current oscillations produced in high-resistivity gallium arsenide by a strong electric field. The oscillations are associated with the slow travelling of a region of high electrical field across the whole sample. An experimental study of the properties of these instabilities has made it possible for us to distinguish this phenomenon from the Gunn effect, from acoustic-electric effects and from contact effects. In order to account for this type of instability, a differential trapping mechanism involving repulsive impurities is proposed; this mechanism can reduce the concentration of charge carriers in the conduction band at strong electrical fields and can lead to the production of a high-field domain. By developing this model qualitatively we have been able to account for all the properties of high-resistance gallium arsenide crystals subjected to a strong electrical field: increase of the Hall constant, existence of a voltage threshold for these oscillations, production of domains of high field, low rate of propagation of these domains, and finally the possibility of inverting the direction of the propagation of the domain without destroying the latter. A quantitative development of the model makes it possible to calculate the various characteristic parameters of these instabilities. Comparison with experiment shows that there is a good agreement, the small deviations coming especially from the lack of knowledge concerning transport properties in gallium arsenide subjected to high fields. From a study of this model, it appears that the instability phenomenon can occur over a wide range of repulsive centre concentrations, and also for a large range of resistivities. This is the reason why it appears systematically in gallium arsenide of medium and high resistivity. (authors) [French] Nous avons mis en evidence et etudie des oscillations de courant qui se produisent a champ electrique eleve dans l'arseniure de

Noble Metal Arsenides and Gold Inclusions in Northwest Africa 8186

Science.gov (United States)

Srinivasan, P.; McCubbin, F. M.; Rahman, Z.; Keller, L. P.; Agee, C. B.

2016-01-01

CK carbonaceous chondrites are a highly thermally altered group of carbonaceous chondrites, experiencing temperatures ranging between approximately 576-867 degrees Centigrade. Additionally, the mineralogy of the CK chondrites record the highest overall oxygen fugacity of all chondrites, above the fayalite-magnetite-quartz (FMQ) buffer. Me-tallic Fe-Ni is extremely rare in CK chondrites, but magnetite and Fe,Ni sulfides are commonly observed. Noble metal-rich inclusions have previously been found in some magnetite and sulfide grains. These arsenides, tellurides, and sulfides, which contain varying amounts of Pt, Ru, Os, Te, As, Ir, and S, are thought to form either by condensation from a solar gas, or by exsolution during metamorphism on the chondritic parent body. Northwest Africa (NWA) 8186 is a highly metamorphosed CK chondrite. This meteorite is predominately composed of NiO-rich forsteritic olivine (Fo65), with lesser amounts of plagioclase (An52), augite (Fs11Wo49), magnetite (with exsolved titanomagnetite, hercynite, and titanohematite), monosulfide solid solution (with exsolved pentlandite), and the phosphate minerals Cl-apatite and merrillite. This meteorite contains coarse-grained, homogeneous silicates, and has 120-degree triple junctions between mineral phases, which indicates a high degree of thermal metamorphism. The presence of NiO-rich olivine, oxides phases all bearing Fe3 plus, and the absence of metal, are consistent with an oxygen fugacity above the FMQ buffer. We also observed noble metal-rich phases within sulfide grains in NWA 8186, which are the primary focus of the present study.

Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide.

Science.gov (United States)

Timm, Rainer; Head, Ashley R; Yngman, Sofie; Knutsson, Johan V; Hjort, Martin; McKibbin, Sarah R; Troian, Andrea; Persson, Olof; Urpelainen, Samuli; Knudsen, Jan; Schnadt, Joachim; Mikkelsen, Anders

2018-04-12

Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first deposition cycle, which could ultimately result in atomic-scale perfection of the semiconductor-oxide interface. Here, we directly observe the chemical reactions at the surface during the first cycle of hafnium dioxide deposition on indium arsenide under realistic synthesis conditions using photoelectron spectroscopy. We find that the widely used ligand exchange model of the ALD process for the removal of native oxide on the semiconductor and the simultaneous formation of the first hafnium dioxide layer must be significantly revised. Our study provides substantial evidence that the efficiency of the self-cleaning process and the quality of the resulting semiconductor-oxide interface can be controlled by the molecular adsorption process of the ALD precursors, rather than the subsequent oxide formation.

Thermal and thermoelectric transport measurements of an individual boron arsenide microstructure

Energy Technology Data Exchange (ETDEWEB)

Kim, Jaehyun; Sellan, Daniel P.; Ou, Eric; Shi, Li, E-mail: lishi@mail.utexas.edu [Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Evans, Daniel A.; Williams, Owen M.; Cowley, Alan H. [Department of Chemistry, The University of Texas at Austin, Austin, Texas 78712 (United States)

2016-05-16

Recent first principles calculations have predicted that boron arsenide (BAs) can possess an unexpectedly high thermal conductivity that depends sensitively on the crystal size and defect concentration. However, few experimental results have been obtained to verify these predictions. In the present work, we report four-probe thermal and thermoelectric transport measurements of an individual BAs microstructure that was synthesized via a vapor transport method. The measured thermal conductivity was found to decrease slightly with temperature in the range between 250 K and 350 K. The temperature dependence suggests that the extrinsic phonon scattering processes play an important role in addition to intrinsic phonon-phonon scattering. The room temperature value of (186 ± 46) W m{sup −1 }K{sup −1} is higher than that of bulk silicon but still a factor of four lower than the calculated result for a defect-free, non-degenerate BAs rod with a similar diameter of 1.15 μm. The measured p-type Seebeck coefficient and thermoelectric power factor are comparable to those of bismuth telluride, which is a commonly used thermoelectric material. The foregoing results also suggest that it is necessary to not only reduce defect and boundary scatterings but also to better understand and control the electron scattering of phonons in order to achieve the predicted ultrahigh intrinsic lattice thermal conductivity of BAs.

Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

International Nuclear Information System (INIS)

Bhoraskar, V.N.

2001-01-01

The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

Californium interrogation prompt neutron (CIPN) instrument for non-destructive assay of spent nuclear fuel—Design concept and experimental demonstration

International Nuclear Information System (INIS)

Henzlova, D.; Menlove, H.O.; Rael, C.D.; Trellue, H.R.; Tobin, S.J.; Park, Se-Hwan; Oh, Jong-Myeong; Lee, Seung-Kyu; Ahn, Seong-Kyu; Kwon, In-Chan; Kim, Ho-Dong

2016-01-01

This paper presents results of the first experimental demonstration of the Californium Interrogation Prompt Neutron (CIPN) instrument developed within a multi-year effort launched by the Next Generation Safeguards Initiative Spent Fuel Project of the United States Department of Energy. The goals of this project focused on developing viable non-destructive assay techniques with capabilities to improve an independent verification of spent fuel assembly characteristics. For this purpose, the CIPN instrument combines active and passive neutron interrogation, along with passive gamma-ray measurements, to provide three independent observables. This paper describes the initial feasibility demonstration of the CIPN instrument, which involved measurements of four pressurized-water-reactor spent fuel assemblies with different levels of burnup and two initial enrichments. The measurements were performed at the Post-Irradiation Examination Facility at the Korea Atomic Energy Institute in the Republic of Korea. The key aim of the demonstration was to evaluate CIPN instrument performance under realistic deployment conditions, with the focus on a detailed assessment of systematic uncertainties that are best evaluated experimentally. The measurements revealed good positioning reproducibility, as well as a high degree of insensitivity of the CIPN instrument's response to irregularities in a radial burnup profile. Systematic uncertainty of individual CIPN instrument signals due to assembly rotation was found to be <4.5%, even for assemblies with fairly extreme gradients in the radial burnup profile. These features suggest that the CIPN instrument is capable of providing a good representation of assembly average characteristics, independent of assembly orientation in the instrument.

Californium interrogation prompt neutron (CIPN) instrument for non-destructive assay of spent nuclear fuel—Design concept and experimental demonstration

Energy Technology Data Exchange (ETDEWEB)

Henzlova, D., E-mail: henzlova@lanl.gov [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Menlove, H.O.; Rael, C.D.; Trellue, H.R.; Tobin, S.J. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Park, Se-Hwan; Oh, Jong-Myeong; Lee, Seung-Kyu; Ahn, Seong-Kyu; Kwon, In-Chan; Kim, Ho-Dong [Korea Atomic Energy Research Institute, Daejeong (Korea, Republic of)

2016-01-11

This paper presents results of the first experimental demonstration of the Californium Interrogation Prompt Neutron (CIPN) instrument developed within a multi-year effort launched by the Next Generation Safeguards Initiative Spent Fuel Project of the United States Department of Energy. The goals of this project focused on developing viable non-destructive assay techniques with capabilities to improve an independent verification of spent fuel assembly characteristics. For this purpose, the CIPN instrument combines active and passive neutron interrogation, along with passive gamma-ray measurements, to provide three independent observables. This paper describes the initial feasibility demonstration of the CIPN instrument, which involved measurements of four pressurized-water-reactor spent fuel assemblies with different levels of burnup and two initial enrichments. The measurements were performed at the Post-Irradiation Examination Facility at the Korea Atomic Energy Institute in the Republic of Korea. The key aim of the demonstration was to evaluate CIPN instrument performance under realistic deployment conditions, with the focus on a detailed assessment of systematic uncertainties that are best evaluated experimentally. The measurements revealed good positioning reproducibility, as well as a high degree of insensitivity of the CIPN instrument's response to irregularities in a radial burnup profile. Systematic uncertainty of individual CIPN instrument signals due to assembly rotation was found to be <4.5%, even for assemblies with fairly extreme gradients in the radial burnup profile. These features suggest that the CIPN instrument is capable of providing a good representation of assembly average characteristics, independent of assembly orientation in the instrument.

Gallium interstitial contributions to diffusion in gallium arsenide

Science.gov (United States)

Schick, Joseph T.; Morgan, Caroline G.

2011-09-01

encountered in fitting experimental results for heavily p-type, Ga-rich gallium arsenide by simply extending a model for gallium interstitial diffusion which has been used for less p-doped material.

Point defects and electric compensation in gallium arsenide single crystals; Punktdefekte und elektrische Kompensation in Galliumarsenid-Einkristallen

Energy Technology Data Exchange (ETDEWEB)

Kretzer, Ulrich

2007-12-10

In the present thesis the point-defect budget of gallium arsenide single crystals with different dopings is studied. It is shown, in which way the concentration of the single point defects depende on the concentration of the dopants, the stoichiometry deviation, and the position of the Fermi level. For this serve the results of the measurement-technical characterization of a large number of samples, in the fabrication of which these parameters were directedly varied. The main topic of this thesis lies in the development of models, which allow a quantitative description of the experimentally studied electrical and optical properties of gallium arsenide single crystals starting from the point-defect concentrations. Because from point defects charge carriers can be set free, their concentration determines essentially the charge-carrier concentration in the bands. In the ionized state point defects act as scattering centers for free charge carriers and influence by this the drift mobility of the charge carriers. A thermodynamic modeling of the point-defect formation yields statements on the equilibrium concentrations of the point defects in dependence on dopant concentration and stoichiometry deviation. It is show that the electrical properties of the crystals observed at room temperature result from the kinetic suppression of processes, via which the adjustment of a thermodynamic equilibrium between the point defects is mediated. [German] In der vorliegenden Arbeit wird der Punktdefekthaushalt von Galliumarsenid-Einkristallen mit unterschiedlichen Dotierungen untersucht. Es wird gezeigt, in welcher Weise die Konzentration der einzelnen Punktdefekte von der Konzentration der Dotierstoffe, der Stoechiometrieabweichung und der Lage des Ferminiveaus abhaengen. Dazu dienen die Ergebnisse der messtechnischen Charakterisierung einer grossen Anzahl von Proben, bei deren Herstellung diese Parameter gezielt variiert wurden. Der Schwerpunkt der Arbeit liegt in der Entwicklung

Model for transport and reaction of defects and carriers within displacement cascades in gallium arsenide

International Nuclear Information System (INIS)

Wampler, William R.; Myers, Samuel M.

2015-01-01

A model is presented for recombination of charge carriers at evolving displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with the details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers, and defects within a representative spherically symmetric cluster of defects. The initial radial defect profiles within the cluster were determined through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to displacement damage from energetic particle irradiation

Continuum modelling of silicon diffusion in indium gallium arsenide

Science.gov (United States)

Aldridge, Henry Lee, Jr.

A possible method to overcome the physical limitations experienced by continued transistor scaling and continue improvements in performance and power consumption is integration of III-V semiconductors as alternative channel materials for logic devices. Indium Gallium Arsenide (InGaAs) is such a material from the III-V semiconductor family, which exhibit superior electron mobilities and injection velocities than that of silicon. In order for InGaAs integration to be realized, contact resistances must be minimized through maximizing activation of dopants in this material. Additionally, redistribution of dopants during processing must be clearly understood and ultimately controlled at the nanometer-scale. In this work, the activation and diffusion behavior of silicon, a prominent n-type dopant in InGaAs, has been characterized and subsequently modelled using the Florida Object Oriented Process and Device Simulator (FLOOPS). In contrast to previous reports, silicon exhibits non-negligible diffusion in InGaAs, even for smaller thermal budget rapid thermal anneals (RTAs). Its diffusion is heavily concentration-dependent, with broadening "shoulder-like" profiles when doping levels exceed 1-3x1019cm -3, for both ion-implanted and Molecular Beam Epitaxy (MBE)-grown cases. Likewise a max net-activation value of ˜1.7x1019cm -3 is consistently reached with enough thermal processing, regardless of doping method. In line with experimental results and several ab-initio calculation results, rapid concentration-dependent diffusion of Si in InGaAs and the upper limits of its activation is believed to be governed by cation vacancies that serve as compensating defects in heavily n-type regions of InGaAs. These results are ultimately in line with an amphoteric defect model, where the activation limits of dopants are an intrinsic limitation of the material, rather than governed by individual dopant species or their methods of incorporation. As a result a Fermi level dependent point

The effect of hydrostatic pressure on the physical properties of magnesium arsenide in cubic and hexagonal phases

Energy Technology Data Exchange (ETDEWEB)

Mokhtari, Ali, E-mail: mokhtari@sci.sku.ac.i [Simulation Laboratory, Department of Physics, Faculty of Science, Shahrekord University, P. B. 115, Shahrekord (Iran, Islamic Republic of); Sedighi, Matin [Simulation Laboratory, Department of Physics, Faculty of Science, Shahrekord University, P. B. 115, Shahrekord (Iran, Islamic Republic of)

2010-04-01

Full potential-linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT) was applied to study the structural and electronic properties of the magnesium arsenide in both cubic and hexagonal phases. The exchange-correlation functional was approximated as a generalized gradient functional introduced by Perdew-Burke-Ernzerhof (GGA96) and Engel-Vosko (EV-GGA). The lattice parameters, bulk modulus and its pressure derivative, cohesive energy, band structures and effective mass of electrons and holes (EME and EMH) were obtained and compared to the available experimental and theoretical results. A phase transition was predicted at pressure of about 1.63 GPa from the cubic to the hexagonal phase. The effect of hydrostatic pressure on the behavior of the electronic properties such as band gap, valence bandwidths, anti-symmetry gap (the energy gap between two parts of the valence bands), EME and EMH were investigated using both GGA96 and EV-GGA methods. High applied pressure can decrease (increase) the holes mobility of cubic (hexagonal) phase of this compound.

The effect of hydrostatic pressure on the physical properties of magnesium arsenide in cubic and hexagonal phases

International Nuclear Information System (INIS)

Mokhtari, Ali; Sedighi, Matin

2010-01-01

Full potential-linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT) was applied to study the structural and electronic properties of the magnesium arsenide in both cubic and hexagonal phases. The exchange-correlation functional was approximated as a generalized gradient functional introduced by Perdew-Burke-Ernzerhof (GGA96) and Engel-Vosko (EV-GGA). The lattice parameters, bulk modulus and its pressure derivative, cohesive energy, band structures and effective mass of electrons and holes (EME and EMH) were obtained and compared to the available experimental and theoretical results. A phase transition was predicted at pressure of about 1.63 GPa from the cubic to the hexagonal phase. The effect of hydrostatic pressure on the behavior of the electronic properties such as band gap, valence bandwidths, anti-symmetry gap (the energy gap between two parts of the valence bands), EME and EMH were investigated using both GGA96 and EV-GGA methods. High applied pressure can decrease (increase) the holes mobility of cubic (hexagonal) phase of this compound.

A study of ion implanted gallium arsenide using deep level transient spectroscopy

International Nuclear Information System (INIS)

Emerson, N.G.

1981-03-01

This thesis is concerned with the study of deep energy levels in ion implanted gallium arsenide (GaAs) using deep level transient spectroscopy (D.L.T.S.). The D.L.T.S. technique is used to characterise deep levels in terms of their activation energies and capture cross-sections and to determine their concentration profiles. The main objective is to characterise the effects on deep levels, of ion implantation and the related annealing processes. In the majority of cases assessment is carried out using Schottky barrier diodes. Low doses of selenium ions 1 to 3 x 10 12 cm -2 are implanted into vapour phase epitaxial (V.P.E.) GaAs and the effects of post-implantation thermal and pulsed laser annealing are compared. The process of oxygen implantation with doses in the range 1 x 10 12 to 5 x 10 13 cm -2 followed by thermal annealing at about 750 deg C, introduces a deep level at 0.79 eV from the conduction band. Oxygen implantation, at doses of 5 x 10 13 cm -2 , into V.P.E. GaAs produces a significant increase in the concentration of the A-centre (0.83 eV). High doses of zinc (10 15 cm -2 ) are implanted into n-type V.P.E. GaAs to form shallow p-type layers. The D.L.T.S. system described in the text is used to measure levels in the range 0.16 to 1.1 eV (for GaAs) with a sensitivity of the order 1:10 3 . (U.K.)

The quaternary arsenide oxides Ce{sub 9}Au{sub 5-x}As{sub 8}O{sub 6} and Pr{sub 9}Au{sub 5-x}As{sub 8}O{sub 6}

Energy Technology Data Exchange (ETDEWEB)

Bartsch, Timo; Hoffmann, Rolf-Dieter; Poettgen, Rainer [Univ. Muenster (Germany). Inst. fuer Anorganische und Analytische Chemie

2016-07-01

The quaternary gold arsenide oxides Ce{sub 9}Au{sub 5-x}As{sub 8}O{sub 6} and Pr{sub 9}Au{sub 5-x}As{sub 8}O{sub 6} were synthesized from the rare earth elements (RE), rare earth oxides, arsenic and gold powder at maximum annealing temperatures of 1173 K. The structures were refined from single crystal X-ray diffractometer data: Pnnm, a=1321.64(6) pm, b=4073.0(3), c=423.96(2), wR2=0.0842, 3106 F{sup 2} values, 160 variables for Ce{sub 9}Au{sub 4.91(4)}As{sub 8}O{sub 6} and Pnnm, a=1315.01(4), b=4052.87(8), c=420.68(1) pm, wR2=0.0865, 5313 F{sup 2} values, 160 variables for Pr{sub 9}Au{sub 4.75(1)}As{sub 8}O{sub 6}. They represent a new structure type and show a further extension of pnictide oxide crystal chemistry. A complex polyanionic gold arsenide network [Au{sub 5}As{sub 8}]{sup 15-} (with some disorder in the gold substructure) is charge compensated with polycationic strands of condensed edge-sharing O rate at RE{sub 4/4} and O rate at RE{sub 4/3} tetrahedra ([RE{sub 4}O{sub 3}]{sub 2}{sup 12+}) as well as RE{sup 3+} cations in cavities.

Application of low-cost Gallium Arsenide light-emitting-diodes as kerma dosemeter and fluence monitor for high-energy neutrons

International Nuclear Information System (INIS)

Mukherjee, B.; Simrock, S.; Khachan, J.; Rybka, D.; Romaniuk, R.

2007-01-01

Displacement damage (DD) caused by fast neutrons in unbiased Gallium Arsenide (GaAs) light emitting diodes (LED) resulted in a reduction of the light output. On the other hand, a similar type of LED irradiated with gamma rays from a 60 Co source up to a dose level in excess of 1.0 kGy (1.0 x 10 5 rad) was found to show no significant drop of the light emission. This phenomenon was used to develop a low cost passive fluence monitor and kinetic energy released per unit mass dosemeter for accelerator-produced neutrons. These LED-dosemeters were used to assess the integrated fluence of photoneutrons, which were contaminated with a strong Bremsstrahlung gamma-background generated by the 730 MeV superconducting electron linac driving the free electron laser in Hamburg (FLASH) at Deutsches Elektronen-Synchrotron. The applications of GaAs LED as a routine neutron fluence monitor and DD precursor for the electronic components located in high-energy accelerator environment are highlighted. (authors)

Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

Science.gov (United States)

Anspaugh, B. E.; Downing, R. G.

1984-01-01

Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.

Freeze drying method for preparing radiation source material

International Nuclear Information System (INIS)

Mosley, W.C.; Smith, P.K.

1976-01-01

Fabrication of a neutron source is specifically claimed. A palladium/californium solution is freeze dried to form a powder which, through conventional powder metallurgy, is shaped into a source containing the californium evenly distributed through a palladium metal matrix. (E.C.B.)

A final report for Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

CERN Document Server

Vernon, S M

1999-01-01

This SBIR Phase I developed neutron detectors made FR-om gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the FR-ont surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed FR-om a layer of Al sub x Ga sub 1 sub - sub x As. Schottky-barrier diodes formed FR-om the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The lowest dark current measured is 1 x 10 sup - sup 1 sup 2 amps at -1 V o...

Arsenic moiety in gallium arsenide is responsible for neuronal apoptosis and behavioral alterations in rats

International Nuclear Information System (INIS)

Flora, Swaran J.S.; Bhatt, Kapil; Mehta, Ashish

2009-01-01

Gallium arsenide (GaAs), an intermetallic semiconductor finds widespread applications in high frequency microwave and millimeter wave, and ultra fast supercomputers. Extensive use of GaAs has led to increased exposure to humans working in semiconductor industry. GaAs has the ability to dissociate into its constitutive moieties at physiological pH and might be responsible for the oxidative stress. The present study was aimed at evaluating, the principle moiety (Ga or As) in GaAs to cause neurological dysfunction based on its ability to cause apoptosis, in vivo and in vitro and if this neuronal dysfunction translated to neurobehavioral changes in chronically exposed rats. Result indicated that arsenic moiety in GaAs was mainly responsible for causing oxidative stress via increased reactive oxygen species (ROS) and nitric oxide (NO) generation, both in vitro and in vivo. Increased ROS further caused apoptosis via mitochondrial driven pathway. Effects of oxidative stress were also confirmed based on alterations in antioxidant enzymes, GPx, GST and SOD in rat brain. We noted that ROS induced oxidative stress caused changes in the brain neurotransmitter levels, Acetylcholinesterase and nitric oxide synthase, leading to loss of memory and learning in rats. The study demonstrates for the first time that the slow release of arsenic moiety from GaAs is mainly responsible for oxidative stress induced apoptosis in neuronal cells causing behavioral changes.

Platinum-group elements fractionation by selective complexing, the Os, Ir, Ru, Rh-arsenide-sulfide systems above 1020 °C

Science.gov (United States)

Helmy, Hassan M.; Bragagni, Alessandro

2017-11-01

The platinum-group element (PGE) contents in magmatic ores and rocks are normally in the low μg/g (even in the ng/g) level, yet they form discrete platinum-group mineral (PGM) phases. IPGE (Os, Ir, Ru) + Rh form alloys, sulfides, and sulfarsenides while Pt and Pd form arsenides, tellurides, bismuthoids and antimonides. We experimentally investigate the behavior of Os, Ru, Ir and Rh in As-bearing sulfide system between 1300 and 1020 °C and show that the prominent mineralogical difference between IPGE (+Rh) and Pt and Pd reflects different chemical preference in the sulfide melt. At temperatures above 1200 °C, Os shows a tendency to form alloys. Ruthenium forms a sulfide (laurite RuS2) while Ir and Rh form sulfarsenides (irarsite IrAsS and hollingworthite RhAsS, respectively). The chemical preference of PGE is selective: IPGE + Rh form metal-metal, metal-S and metal-AsS complexes while Pt and Pd form semimetal complexes. Selective complexing followed by mechanical separation of IPGE (and Rh)-ligand from Pt- and Pd-ligand associations lead to PGE fractionation.

Trends in radioisotope development and utilization in the United States

Energy Technology Data Exchange (ETDEWEB)

Mott, W E [Energy Research and Development Administration, Washington, D.C. (USA)

1976-06-01

The current trends in radioisotope and radiation technology in the United States are overviewed with emphasis on the developments since the 1973 Conference. The comments focus primarily on the research and development activities receiving the most attention today from the various agencies of the Government. Among the many available radionuclides, technetium-99m has played the single most important role for making possible the developments in the field of nuclear medicine. Many other short lived medium-lived nuclides are applied in the fields of nuclear medicine, cardiac pacemaker, artificial heart, and blood irradiator. Radiation processing is now firmly established in the United States. The trends in sewage treatment, polymer-impregnated materials, bioengineering, and food irradiation are reviewed. The programs for californium-252, strontium-90, cesium-137, plutonium-238, and krypton-85 are also reviewed. The author concludes this paper with the acknowledgement that Japanese researchers have contributed to and have been closely involved in many of the programs discussed. Of particular note is the participation in the clinical phase of the californium-252 radiotherapy program. Several Japanese hospitals have been cooperating with the United States since the very beginning of the californium-252 program in determining the value of the californium-252 neutron therapy. The research being performed is unique, and will contribute greatly to the decisions on the ultimate future of californium-252 for therapeutic purposes.

Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

International Nuclear Information System (INIS)

Hu, Long; Su, Jiancang; Ding, Zhenjie; Hao, Qingsong; Yuan, Xuelin

2014-01-01

Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations. It has been demonstrated that when a voltage with amplitude of 5.2 kV is applied, after an exciting optical pulse with energy of 1 μJ arrival, the structure with thickness of 650 μm reaches a high conductivity state within 110 ps. Carriers are created due to photons absorption, and electrons and holes drift to anode and cathode terminals, respectively. Static ionizing domains appear both at anode and cathode terminals, and create impact-generated carriers which contribute to the formation of electron-hole plasma along entire channel. When the electric field in plasma region increases above the critical value (∼4 kV/cm) at which the electrons drift velocity peaks, a domain comes into being. An increase in carrier concentration due to avalanche multiplication in the domains reduces the domain width and results in the formation of an additional domain as soon as the field outside the domains increases above ∼4 kV/cm. The formation and evolution of multiple powerfully avalanching domains observed in the simulations are the physical reasons of ultrafast switching. The switch exhibits delayed breakdown with the characteristics affected by biased electric field, current density, and optical pulse energy. The dependence of threshold energy of the exciting optical pulse on the biased electric field is discussed

Non-local exchange correlation functionals impact on the structural, electronic and optical properties of III-V arsenides

KAUST Repository

Anua, N. Najwa

2013-08-20

Exchange correlation (XC) energy functionals play a vital role in the efficiency of density functional theory (DFT) calculations, more soundly in the calculation of fundamental electronic energy bandgap. In the present DFT study of III-arsenides, we investigate the implications of XC-energy functional and corresponding potential on the structural, electronic and optical properties of XAs (X = B, Al, Ga, In). Firstly we report and discuss the optimized structural lattice parameters and the band gap calculations performed within different non-local XC functionals as implemented in the DFT-packages: WIEN2k, CASTEP and SIESTA. These packages are representative of the available code in ab initio studies. We employed the LDA, GGA-PBE, GGA-WC and mBJ-LDA using WIEN2k. In CASTEP, we employed the hybrid functional, sX-LDA. Furthermore LDA, GGA-PBE and meta-GGA were employed using SIESTA code. Our results point to GGA-WC as a more appropriate approximation for the calculations of structural parameters. However our electronic bandstructure calculations at the level of mBJ-LDA potential show considerable improvements over the other XC functionals, even the sX-LDA hybrid functional. We report also the optical properties within mBJ potential, which show a nice agreement with the experimental measurements in addition to other theoretical results. © 2013 IOP Publishing Ltd.

Nematic fluctuations in iron arsenides NaFeAs and LiFeAs probed by 75As NMR

Science.gov (United States)

Toyoda, Masayuki; Kobayashi, Yoshiaki; Itoh, Masayuki

2018-03-01

75As NMR measurements have been made on single crystals to study the nematic state in the iron arsenides NaFeAs, which undergoes a structural transition from a high-temperature (high-T ) tetragonal phase to a low-T orthorhombic phase at Ts=57 K and an antiferromagnetic transition at TN=42 K, and LiFeAs having a superconducting transition at Tc=18 K. We observe the in-plane anisotropy of the electric field gradient η even in the tetragonal phase of NaFeAs and LiFeAs, showing the local breaking of tetragonal C4 symmetry. Then, η is found to obey the Curie-Weiss (CW) law as well as in Ba (Fe1-xCox) 2As2 . The good agreement between η and the nematic susceptibility obtained by electronic Raman spectroscopy indicates that η is governed by the nematic susceptibility. From comparing η in NaFeAs and LiFeAs with η in Ba (Fe1-xCox) 2As2 , we discuss the carrier-doping dependence of the nematic susceptibility. The spin contribution to nematic susceptibility is also discussed from comparing the CW terms in η with the nuclear spin-lattice relaxation rate divided by temperature 1 /T1T . Finally, we discuss the nematic transition in the paramagnetic orthorhombic phase of NaFeAs from the in-plane anisotropy of 1 /T1T .

Understanding charge carrier relaxation processes in terbium arsenide nanoparticles using transient absorption spectroscopy

Science.gov (United States)

Vanderhoef, Laura R.

Erbium arsenide nanoparticles epitaxially grown within III-V semiconductors have been shown to improve the performance of devices for applications ranging from thermoelectrics to THz pulse generation. The small size of rare-earth nanoparticles suggests that interesting electronic properties might emerge as a result of both spatial confinement and surface states. However, ErAs nanoparticles do not exhibit any signs of quantum confinement or an emergent bandgap, and these experimental observations are understood from theory. The incorporation of other rare-earth monopnictide nanoparticles into III-V hosts is a likely path to engineering carrier excitation, relaxation and transport dynamics for optoelectronic device applications. However, the electronic structure of these other rare-earth monopnictide nanoparticles remains poorly understood. The objective of this research is to explore the electronic structure and optical properties of III-V materials containing novel rare-earth monopnictides. We use ultrafast pump-probe spectroscopy to investigate the electronic structure of TbAs nanoparticles in III-V hosts. We start with TbAs:GaAs, which was expected to be similar to ErAs:GaAs. We study the dynamics of carrier relaxation into the TbAs states using optical pump terahertz probe transient absorption spectroscopy. By analyzing how the carrier relaxation rates depend on pump fluence and sample temperature, we conclude that the TbAs states are saturable. Saturable traps suggest the existence of a bandgap for TbAs nanoparticles, in sharp contrast with previous results for ErAs. We then apply the same experimental technique to two samples of TbAs nanoparticles in InGaAs with different concentrations of TbAs. We observe similar relaxation dynamics associated with trap saturation, though the ability to resolve these processes is contingent upon a high enough TbAs concentration in the sample. We have also constructed an optical pump optical probe transient absorption

Manganese determination om minerals by activation analysis, using the californium-252 as a neutron source; Determinacao de manganes em minerios, por analise por ativacao, usando californio-252 como fonte de neutrons

Energy Technology Data Exchange (ETDEWEB)

Cardoso, Antonio

1976-07-01

Neutron Activation Analysis, using a Californium-252 neutron source, has been applied for the determination of manganese in ores such as pyrolusite, rodonite (manganese silicate)' and blending used in dry-batteries The favorable nuclear properties of manganese, such as high thermal neutron cross-section for the reaction {sup 55}Mn (n.gamma){sup 56} Mn, high concentration of manganese in the matrix and short half - life of {sup 56}Mn, are an ideal combination for non-destructive analysis of manganese in ores. Samples and standards of manganese dioxide were irradiated for about 20 minutes, followed by a 4 to 15 minutes decay and counted in a single channel pulse-height discrimination using a NaI(Tl) scintillation detector. Counting time was equal to 10 minutes. The interference of nuclear reactions {sup 56}Fe(n,p){sup 56}Mn and {sup 59} Co (n, {alpha}){sup 56} were studied, as well as problems in connection with neutron shadowing during irradiation, gamma-rays attenuation during counting and influence of granulometry of samples. One sample,was also analysed by wet-chemical method (sodium bismuthate) in order to compare results. As a whole, i t was shown that the analytical method of neutron activation for manganese in ores and blending, is a method simple, rapid and with good precision and accuracy. (author)

Manganese determination om minerals by activation analysis, using the californium-252 as a neutron source; Determinacao de manganes em minerios, por analise por ativacao, usando californio-252 como fonte de neutrons

Energy Technology Data Exchange (ETDEWEB)

Cardoso, Antonio

1976-07-01

Neutron Activation Analysis, using a Californium-252 neutron source, has been applied for the determination of manganese in ores such as pyrolusite, rodonite (manganese silicate)' and blending used in dry-batteries The favorable nuclear properties of manganese, such as high thermal neutron cross-section for the reaction {sup 55}Mn (n.gamma){sup 56} Mn, high concentration of manganese in the matrix and short half - life of {sup 56}Mn, are an ideal combination for non-destructive analysis of manganese in ores. Samples and standards of manganese dioxide were irradiated for about 20 minutes, followed by a 4 to 15 minutes decay and counted in a single channel pulse-height discrimination using a NaI(Tl) scintillation detector. Counting time was equal to 10 minutes. The interference of nuclear reactions {sup 56}Fe(n,p){sup 56}Mn and {sup 59} Co (n, {alpha}){sup 56} were studied, as well as problems in connection with neutron shadowing during irradiation, gamma-rays attenuation during counting and influence of granulometry of samples. One sample,was also analysed by wet-chemical method (sodium bismuthate) in order to compare results. As a whole, i t was shown that the analytical method of neutron activation for manganese in ores and blending, is a method simple, rapid and with good precision and accuracy. (author)

Source storage and transfer cask: Users Guide

International Nuclear Information System (INIS)

Eccleston, G.W.; Speir, L.G.; Garcia, D.C.

1985-04-01

The storage and shield cask for the dual californium source is designed to shield and transport up to 3.7 mg (2 Ci) of 252 Cf. the cask meets Department of Transportation (DOT) license requirements for Type A materials (DOT-7A). The cask is designed to transfer sources to and from the Flourinel and Fuel Storage (FAST) facility delayed-neutron interrogator. Californium sources placed in the cask must be encapsulated in the SR-CF-100 package and attached to Teleflex cables. The cask contains two source locations. Each location contains a gear box that allows a Teleflex cable to be remotely moved by a hand crank into and out of the cask. This transfer procedure permits sources to be easily removed and inserted into the delayed-neutron interrogator and reduces personnel radiation exposure during transfer. The radiation dose rate with the maximum allowable quantity of californium (3.7 mg) in the cask is 30 mR/h at the surface and less than 2 mR/h 1 m from the cask surface. This manual contains information about the cask, californium sources, describes the method to ship the cask, and how to insert and remove sources from the cask. 28 figs

A novel wide range, real-time neutron fluence monitor based on commercial off the shelf gallium arsenide light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Mukherjee, B., E-mail: bhaskar.mukherjee@uk-essen.de [Westdeutsches Protonentherapiezentrum Essen (WPE) gGmbH, Hufelandstrasse 55, D-45147 Essen (Germany); Hentschel, R. [Strahlenklinik, University Hospital Essen (Germany); Lambert, J. [Westdeutsches Protonentherapiezentrum Essen (WPE) gGmbH, Hufelandstrasse 55, D-45147 Essen (Germany); Deya, W. [Strahlenklinik, University Hospital Essen (Germany); Farr, J. [Westdeutsches Protonentherapiezentrum Essen (WPE) gGmbH, Hufelandstrasse 55, D-45147 Essen (Germany)

2011-10-01

Displacement damage produced by high-energy neutrons in gallium arsenide (GaAs) light emitting diodes (LED) results in the reduction of light output. Based on this principle we have developed a simple, cost effective, neutron detector using commercial off the shelf (COTS) GaAs-LED for the assessment of neutron fluence and KERMA at critical locations in the vicinity of the 230 MeV proton therapy cyclotron operated by Westdeutsches Protonentherapiezentrum Essen (WPE). The LED detector response (mV) was found to be linear within the neutron fluence range of 3.0x10{sup 8}-1.0x10{sup 11} neutron cm{sup -2}. The response of the LED detector was proportional to neutron induced displacement damage in LED; hence, by using the differential KERMA coefficient of neutrons in GaAs, we have rescaled the calibration curve for two mono-energetic sources, i.e. 1 MeV neutrons and 14 MeV neutrons generated by D+T fusion reaction. In this paper we present the principle of the real-time GaAs-LED based neutron fluence monitor as mentioned above. The device was calibrated using fast neutrons produced by bombarding a thick beryllium target with 14 MeV deuterons from a TCC CV 28 medical cyclotron of the Strahlenklinik University Hospital Essen.

Radionuclides in rodents

International Nuclear Information System (INIS)

Taylor, G.N.

1985-01-01

Studies are being conducted in mice comparing the toxicity of radium-226, plutonium-239, americium-241, californium-249 and californium-252 in C57B1/Do (albino) mice and the toxicity of americium-241, plutonium-239 and radium-226 in deer mice (Peromyscus maniculatus) and grasshopper mice (Onychomys leucogaster). These experiments will ultimately enable comparison of the toxicity of the above actinide toxicity in man to be made using radium toxicity as the baseline

Quantum-chemical consideration of extermal valent forms of actinides

International Nuclear Information System (INIS)

Ionova, G.V.; Pershina, V.G.; Spitsyn, V.I.

1982-01-01

Stability of valent forms of actinides that has not yet studied experimentally, is considered within the framework of quantum-chemical considerations. Oxidizing potentials E 0 for actinide elements are determined theoretically. A dependence of the definite valent state stability on relativistic effect is shown. A conclusion is made that oxidizing potential E 0 (4-5) for americium should be higher than E 0 (4-5) for plutonium. A relatively small oxidizing potential E 0 (4-5) for curium speaks about principle possibility of production of five-valent curium in solution, though it is less stable than the six-valent one. Oxidizing potential corresponding to transition of three-valent californium into the four-valent state should be less than the value adopted in literature. A relatively small oxidizing potential of californium E 0 (4-5) speaks about possible existence of five-valent californium in solution

Design of a homogeneous subcritical nuclear reactor based on thorium with a source of californium 252; Diseno de un reactor nuclear subcritico homogeneo a base de Torio con una fuente de Californio 252

Energy Technology Data Exchange (ETDEWEB)

Delgado H, C. E.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas, Zac. (Mexico); Sajo B, L., E-mail: ce_delgado89@hotmail.com [Universidad Simon Bolivar, Laboratorio de Fisica Nuclear, Apdo. 89000, 1080A Caracas (Venezuela, Bolivarian Republic of)

2015-10-15

Full text: One of the energy alternatives to fossil fuels which do not produce greenhouse gases is the nuclear energy. One of the drawbacks of this alternative is the generation of radioactive wastes of long half-life and its relation to the generation of nuclear materials to produce weapons of mass destruction. An option to these drawbacks of nuclear energy is to use Thorium as part of the nuclear fuel which it becomes in U{sup 233} when capturing neutrons, that is a fissile material. In this paper Monte Carlo methods were used to design a homogeneous subcritical reactor based on thorium. As neutron reflector graphite was used. The reactor core is homogeneous and is formed of 70% light water as moderator, 12% of enriched uranium UO{sub 2}(NO{sub 3}){sub 4} and 18% of thorium Th(NO{sub 3}){sub 4} as fuel. To start the nuclear fission chain reaction an isotopic source of californium 252 was used with an intensity of 4.6 x 10{sup 7} s{sup -1}. In the design the value of the effective multiplication factor, whose value turned out k{sub eff} <1 was calculated. Also, the neutron spectra at different distances from the source and the total fluence were calculated, as well as the values of the ambient dose equivalent in the periphery of the reactor. (Author)

Study by optical spectroscopy of the interaction between a hydrogen multi-polar plasma and a gallium arsenide surface

International Nuclear Information System (INIS)

Ferdinand, Robin

1990-01-01

The objective of this research thesis has been to understand which are the involved species during the deoxidation-passivation stage of the processing of gallium arsenide platelets used in semiconductor industry. The author describes problems related to the presence of oxides, and highlights the benefit of using a hydrogen multi-polar plasma to softly remove surface oxides. The experimental set-up is notably characterised by the role of magnetic confinement and its influence on plasma. A theoretical model is then developed for a better understanding of chemical and physical-chemical reactions occurring in the hydrogen plasma. Based on the use of the Boltzmann equation, the model calculates the electron energy distribution function, and allows the follow-up of species present in the plasma with respect to available and accessible parameters (pressure, discharge current, discharge voltage). A spectroscopic study of the hydrogen plasma is then reported, and the numerical model is validated by interpreting line shapes of the hydrogen Balmer series. A second experimental approach, based on electrostatic probes, is implemented, and the Laframboise theory is applied to this technique and allows electronic and ionic densities, and electron temperature to be determined. Experimental and numerical results are compared. All this leads to the study of the interaction of plasma with a sample, with a first step of study of a mixture plasma containing 85 per cent of hydrogen and 15 per cent of arsine, in order to get a general knowledge of emissions related to the presence of AsH 3 . Finally, interaction studies are performed by using laser-induced fluorescence and conventional space-resolved optical spectroscopy

Evolution of magnetic and superconducting phases with doping and pressure in the underdoped iron-arsenide superconductor Ba{sub 1-x}K{sub x}Fe{sub 2}As{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Hassinger, Elena [Universite de Sherbrooke, Quebec (Canada); Canadian Institute for Advanced Research, Toronto, Ontario (Canada); Max Planck Institut fuer Chemische Physik fester Stoffe, Dresden (Germany); Gredat, Gregory; Valade, Fabrice; Rene de Cotret, Samuel; Juneau-Fecteau, Alexandre; Reid, Jean-Philippe; Doiron-Leyraud, Nicolas [Universite de Sherbrooke, Quebec (Canada); Kim, H.; Tanatar, Makariy A.; Prozorov, Ruslan [Ames Laboratory, Ames, Iowa (United States); Shen, B.; Wen, H.H. [Nanjing University (China); Taillefer, Louis [Universite de Sherbrooke, Quebec (Canada); Canadian Institute for Advanced Research, Toronto, Ontario (Canada)

2015-07-01

The electrical resistivity ρ of the iron-arsenide superconductor Ba{sub 1-x}K{sub x}Fe{sub 2}As{sub 2} was measured in applied pressures up to 2.75 GPa for seven underdoped samples. Six of them are antiferromagnetic at P = 0 with 0.16 < x < 0.24 and one is non-magnetic with x = 0.26. The stripe-like antiferromagnetic ordering temperature T{sub N}, detected as a sharp anomaly in ρ(T), decreases linearly with pressure. For every magnetic sample a second phase appears with pressure at a lower temperature T{sub 0}, which rises with pressure. The critical pressure above which this phase appears decreases with doping going to zero for x = 0.24 just below the critical doping for the magnetic phase. This behaviour is reminiscent of the second magnetic phase appearing in Ba{sub 0.76}Na{sub 0.24}Fe{sub 2}As{sub 2} where the tetragonal symmetry is restored in favour of the scenario in which the nematic order in the iron pnictides is of magnetic origin.

Biological monitoring of arsenic exposure of gallium arsenide- and inorganic arsenic-exposed workers by determination of inorganic arsenic and its metabolites in urine and hair

Energy Technology Data Exchange (ETDEWEB)

Yamauchi, H.; Takahashi, K.; Mashiko, M.; Yamamura, Y. (St. Marianna Univ. School of Medicine, Kawasaki (Japan))

1989-11-01

In an attempt to establish a method for biological monitoring of inorganic arsenic exposure, the chemical species of arsenic were measured in the urine and hair of gallium arsenide (GaAs) plant and copper smelter workers. Determination of urinary inorganic arsenic concentration proved sensitive enough to monitor the low-level inorganic arsenic exposure of the GaAs plant workers. The urinary inorganic arsenic concentration in the copper smelter workers was far higher than that of a control group and was associated with high urinary concentrations of the inorganic arsenic metabolites, methylarsonic acid (MAA) and dimethylarsinic acid (DMAA). The results established a method for exposure level-dependent biological monitoring of inorganic arsenic exposure. Low-level exposures could be monitored only by determining urinary inorganic arsenic concentration. High-level exposures clearly produced an increased urinary inorganic arsenic concentration, with an increased sum of urinary concentrations of inorganic arsenic and its metabolites (inorganic arsenic + MAA + DMAA). The determination of urinary arsenobetaine proved to determine specifically the seafood-derived arsenic, allowing this arsenic to be distinguished clearly from the arsenic from occupational exposure. Monitoring arsenic exposure by determining the arsenic in the hair appeared to be of value only when used for environmental monitoring of arsenic contamination rather than for biological monitoring.

Atmospheric pressure chemical vapour deposition of vanadium arsenide thin films via the reaction of VCl4 or VOCl3 with tBuAsH2

International Nuclear Information System (INIS)

Thomas, Tegan; Blackman, Christopher S.; Parkin, Ivan P.; Carmalt, Claire J.

2013-01-01

Thin films of vanadium arsenide were deposited via the dual-source atmospheric pressure chemical vapour deposition reactions of VCl 4 or VOCl 3 with t BuAsH 2 . Using the vanadium precursor VCl 4 , films were deposited at substrate temperatures of 550–600 °C, which were black-gold in appearance and were found to be metal-rich with high levels of chlorine incorporation. The use of VOCl 3 as the vanadium source resulted in films being deposited between 450 and 600 °C and, unlike when using VCl 4 , were silver in appearance. The films deposited using VOCl 3 demonstrated vanadium to arsenic ratios close to 1:1, and negligible chlorine incorporation. Films deposited using either vanadium precursor were identified as VAs using powder X-ray diffraction and possessed borderline metallic/semiconductor resistivities. - Highlights: • Formation of VAs films via atmospheric pressure chemical vapour deposition. • Films formed using VCl 4 or VOCl 3 and t BuAsH 2 . • Powder X-ray diffraction showed that crystalline VAs films were deposited. • Films from VOCl 3 had a V:As ratio close to 1 with negligible Cl incorporation. • Films were silver and possessed borderline metallic/semiconductor resistivities

Native copper in Permian Mudstones from South Devon: A natural analogue of copper canisters for high-level radioactive waste

International Nuclear Information System (INIS)

Milodowski, A.E.; Styles, M.T.; Werme, L.; Oversby, V.M.

2001-01-01

Native copper (>99.9% Cu) sheets associated with complex uraniferous and vanadiferous concretions in Upper Permian Mudstones from south Devon (United Kingdom) have been studied as a 'natural analogue' for copper canisters designed to be used in the isolation of spent fuel and high-level radioactive wastes (HLW) for deep geological disposal. Detailed analysis demonstrates that the copper formed before the mudstones were compacted. The copper displays complex corrosion and alteration. The earliest alteration was to copper oxides, followed sequentially by the formation of copper arsenides, nickel arsenide and copper sulphide, and finally nickel arsenide accompanied by nickel-copper arsenide, copper arsenide and uranium silicates. Petrographic observations demonstrate that these alteration products also formed prior to compaction. Consideration of the published history for the region indicates that maximum compaction of the rocks will have occurred by at least the Lower Jurassic (i.e. over 176 Ma ago). Since that time the copper sheets have remained isolated by the compacted mudstones and were unaffected by further corrosion until uplift and exposure to present-day surface weathering

Indium Gallium Nitride Multijunction Solar Cell Simulation Using Silvaco Atlas

Science.gov (United States)

2007-06-01

models is of great interest in space applications. By increasing the efficiency of photovoltaics, the number of solar panels is decreased. Therefore...obtained in single-junction solar cells by using Gallium Arsenide. Monocrystalline Gallium Arsenide has a maximum efficiency of approximately 25.1% [10

a Positron 2D-ACAR Study of the Silicon-Dioxide Interface and the Point Defects in the Semi-Insulating Gallium Arsenide

Science.gov (United States)

Peng, Jianping

The SiO_2-Si system has been the subject of extensive study for several decades. Particular interest has been paid to the interface between Si single crystal and the amorphous SiO_2 which determines the properties and performances of devices. This is significant because of the importance of Si technology in the semiconductor industry. The development of the high-intensity slow positron beam at Brookhaven National Laboratory make it possible to study this system for the first time using the positron two-dimensional angular correlation of annihilation radiation (2D-ACAR) technique. 2D-ACAR is a well established and is a non-destructive microscopic probe for studying the electronic structure of materials, and for doing the depth-resolved measurements. Some unique information was obtained from the measurements performed on the SiO_2-Si system: Positronium (Ps) atoms formation and trapping in microvoids in both oxide and interface regions; and positron annihilation at vacancy-like defects in the interface region which can be attributed to the famous Pb centers. The discovery of the microvoids in the interface region may have some impact on the fabrication of the next generation electronic devices. Using the conventional 2D-ACAR setup with a ^{22}Na as positron source, we also studied the native arsenic (As) vacancy in the semi -insulating gallium-arsenide (SI-GaAs), coupled with in situ infrared light illumination. The defect spectrum was obtained by comparing the spectrum taken without photo -illumination to the spectrum taken with photo-illumination. The photo-illumination excited electrons from valence band to the defect level so that positrons can become localized in the defects. The two experiments may represent a new direction of the application of positron 2D-ACAR technique on the solid state physics and materials sciences.

Polarized electron sources

Energy Technology Data Exchange (ETDEWEB)

Prepost, R. [Univ. of Wisconsin, Madison, WI (United States)

1994-12-01

The fundamentals of polarized electron sources are described with particular application to the Stanford Linear Accelerator Center. The SLAC polarized electron source is based on the principle of polarized photoemission from Gallium Arsenide. Recent developments using epitaxially grown, strained Gallium Arsenide cathodes have made it possible to obtain electron polarization significantly in excess of the conventional 50% polarization limit. The basic principles for Gallium and Arsenide polarized photoemitters are reviewed, and the extension of the basic technique to strained cathode structures is described. Results from laboratory measurements of strained photocathodes as well as operational results from the SLAC polarized source are presented.

Polarized electron sources

International Nuclear Information System (INIS)

Prepost, R.

1994-01-01

The fundamentals of polarized electron sources are described with particular application to the Stanford Linear Accelerator Center. The SLAC polarized electron source is based on the principle of polarized photoemission from Gallium Arsenide. Recent developments using epitaxially grown, strained Gallium Arsenide cathodes have made it possible to obtain electron polarization significantly in excess of the conventional 50% polarization limit. The basic principles for Gallium and Arsenide polarized photoemitters are reviewed, and the extension of the basic technique to strained cathode structures is described. Results from laboratory measurements of strained photocathodes as well as operational results from the SLAC polarized source are presented

Definitive Brachytherapy for Kaposi's Sarcoma

International Nuclear Information System (INIS)

Williams, A.; Ezzell, G.; Zalupski, M.; Fontanesi, J.

1996-01-01

Purpose: To assess the efficacy and possible complications in patients diagnosed with Kaposi's sarcoma and treated with definitive brachytherapy. Methods and Materials: Between January, 1995 and December, 1995, four patients with Kaposi's sarcoma (KS) were treated with brachytherapy. Three patients, all with positive HIV status were treated using Iridium 192 (Ir-192) sources via a high-dose rate remote afterloader. One patient with endemic KS was treated using the application of catheters loaded with Californium 252. Eight sites were treated and included scalp, feet, nose, penis, hand, neck, and back. Dose rate for Ir-192 was 330cGy/fx to a total dose of 990cGy. The Californium was delivered as 100nGy/b.i.d. to a total dose of 900nGy. Follow-up as ranged from 2-6 months. Results: All four patients remain alive. Seven of eight sites have had complete clinical response and each patient has reported durable pain relief that has not subsided through last follow-up of 1/96. Two of eight sites, both treated with surface mold technique with Californium 252 developed moist desquamation. The remaining six sites did not demonstrate significant toxicity. Conclusion: Brachytherapy can offer Kaposi's sarcoma patients results that are equivalent to external beam radiation therapy, with minimal complications, a shorter treatment time and potential cost effectiveness

Californium Recovery from Palladium Wire

Energy Technology Data Exchange (ETDEWEB)

Burns, Jon D. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2014-08-01

The recovery of ²⁵²Cf from palladium-²⁵²Cf cermet wires was investigated to determine the feasibility of implementing it into the cermet wire production operation at Oak Ridge National Laboratory’s Radiochemical Engineering Development Center. The dissolution of Pd wire in 8 M HNO₃ and trace amounts of HCl was studied at both ambient and elevated temperatures. These studies showed that it took days to dissolve the wire at ambient temperature and only 2 hours at 60°C. Adjusting the ratio of the volume of solvent to the mass of the wire segment showed little change in the kinetics of dissolution, which ranged from 0.176 mL/mg down to 0.019 mL/mg. A successful chromatographic separation of ¹⁵³Gd, a surrogate for ²⁵²Cf, from Pd was demonstrated using AG 50x8 cation exchange resin with a bed volume of 0.5 mL and an internal diameter of 0.8 cm.

Californium-252 Program Equipment Evaluation

Energy Technology Data Exchange (ETDEWEB)

Chattin, Fred Rhea [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Wilson, Kenton [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Ezold, Julie G. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2017-12-01

To successfully continue the ²⁵²Cf production and meet the needs of the customers, a comprehensive evaluation of the Building 7920 processing equipment was requested to identify equipment critical to the operational continuity of the program.

Electron tunneling transport across heterojunctions between europium sulfide and indium arsenide

Science.gov (United States)

Kallaher, Raymond L.

This dissertation presents research done on utilizing the ferromagnetic semiconductor europium sulfide (EuS) to inject spin polarized electrons into the non-magnetic semiconductor indium arsenide (InAs). There is great interest in expanding the functionality of modern day electronic circuits by creating devices that depend not only on the flow of charge in the device, but also on the transport of spin through the device. Within this mindset, there is a concerted effort to establish an efficient means of injecting and detecting spin polarized electrons in a two dimensional electron system (2DES) as the first step in developing a spin based field effect transistor. Thus, the research presented in this thesis has focused on the feasibility of using EuS, in direct electrical contact with InAs, as a spin injecting electrode into an InAs 2DES. Doped EuS is a concentrated ferromagnetic semiconductor, whose conduction band undergoes a giant Zeeman splitting when the material becomes ferromagnetic. The concomitant difference in energy between the spin-up and spin-down energy bands makes the itinerant electrons in EuS highly spin polarized. Thus, in principle, EuS is a good candidate to be used as an injector of spin polarized electrons into non-magnetic materials. In addition, the ability to adjust the conductivity of EuS by varying the doping level in the material makes EuS particularly suited for injecting spins into non-magnetic semiconductors and 2DES. For this research, thin films of EuS have been grown via e-beam evaporation of EuS powder. This growth technique produces EuS films that are sulfur deficient; these sulfur vacancies act as intrinsic electron donors and the resulting EuS films behave like heavily doped ferromagnetic semiconductors. The growth parameters and deposition procedures were varied and optimized in order to fabricate films that have minimal crystalline defects. Various properties and characteristics of these EuS films were measured and compared to

Interdigitated Back-Surface-Contact Solar Cell Modeling Using Silvaco Atlas

Science.gov (United States)

2015-06-01

and Gallium Arsenide, and triple -junction cells with Indium Gallium Phosphide, Gallium Arsenide, and Germanium. Work was also done by Fotis [4] on...output power at various points on the IV curve, from [15]. ............................18 Figure 15. IV curve with the MPP. The orange area is...53 Figure 35. Simulation results of cell power output at maximum power point for varying bulk thicknesses

Characteristics of trap-filled gallium arsenide photoconductive switches used in high gain pulsed power applications

International Nuclear Information System (INIS)

ISLAM, N.E.; SCHAMILOGLU, E.; MAR, ALAN; LOUBRIEL, GUILLERMO M.; ZUTAVERN, FRED J.; JOSHI, R.P.

2000-01-01

The electrical properties of semi-insulating (SI) Gallium Arsenide (GaAs) have been investigated for some time, particularly for its application as a substrate in microelectronics. Of late this material has found a variety of applications other than as an isolation region between devices, or the substrate of an active device. High resistivity SI GaAs is increasingly being used in charged particle detectors and photoconductive semiconductor switches (PCSS). PCSS made from these materials operating in both the linear and non-linear modes have applications such as firing sets, as drivers for lasers, and in high impedance, low current Q-switches or Pockels cells. In the non-linear mode, it has also been used in a system to generate Ultra-Wideband (UWB) High Power Microwaves (HPM). The choice of GaAs over silicon offers the advantage that its material properties allow for fast, repetitive switching action. Furthermore photoconductive switches have advantages over conventional switches such as improved jitter, better impedance matching, compact size, and in some cases, lower laser energy requirement for switching action. The rise time of the PCSS is an important parameter that affects the maximum energy transferred to the load and it depends, in addition to other parameters, on the bias or the average field across the switch. High field operation has been an important goal in PCSS research. Due to surface flashover or premature material breakdown at higher voltages, most PCSS, especially those used in high power operation, need to operate well below the inherent breakdown voltage of the material. The lifetime or the total number of switching operations before breakdown, is another important switch parameter that needs to be considered for operation at high bias conditions. A lifetime of ∼ 10 4 shots has been reported for PCSS's used in UWB-HPM generation [5], while it has exceeded 10 8 shots for electro-optic drivers. Much effort is currently being channeled in the

E1 Gap of Wurtzite InAs Single Nanowires Measured by Means of Resonant Raman Spectroscopy

International Nuclear Information System (INIS)

Moeller, M.; Lima, M. M. Jr. de; Cantarero, A.; Dacal, L. C. O.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.

2011-01-01

Indium arsenide nanowires were synthesized with an intermixing of wurtzite and zincblende structure by chemical beam epitaxy with the vapor-liquid-solid mechanism. Resonant Raman spectroscopy of the transverse optical phonon mode at 215 cm -1 reveals an E 1 gap of 2.47 eV which is assigned to the electronic band gap at the A point in the indium arsenide wurtzite phase.

E1 Gap of Wurtzite InAs Single Nanowires Measured by Means of Resonant Raman Spectroscopy

Science.gov (United States)

Möller, M.; Dacal, L. C. O.; de Lima, M. M.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.; Cantarero, A.

2011-12-01

Indium arsenide nanowires were synthesized with an intermixing of wurtzite and zincblende structure by chemical beam epitaxy with the vapor-liquid-solid mechanism. Resonant Raman spectroscopy of the transverse optical phonon mode at 215 cm-1 reveals an E1 gap of 2.47 eV which is assigned to the electronic band gap at the A point in the indium arsenide wurtzite phase.

Californium Cf-252 for pelvic radiotherapy

Energy Technology Data Exchange (ETDEWEB)

Maruyama, Y; Feola, J M; Tai, D; Wilson, L C; Van Nagell, J R; Yoneda, J

1978-01-01

Clinical data about therapy concerning tumors of the female gynecological cancers of the cervix, vagina and uterus are reviewed. Dosimetric, laboratory and radiobiological research data form the basis for an approach to such tumors using Cf-252 as a form of boost brachytherapy. Extreme personnel hazards are a real and important consideration and indicate that maximal containment and isolation procedures should be exercised in its use.

Narrowing the gap: from semiconductor to semimetal in the homologous series of rare-earth zinc arsenides RE(2-y)Zn4As4·n(REAs) and Mn-substituted derivatives RE(2-y)Mn(x)Zn(4-x)As4·n(REAs) (RE = La-Nd, Sm, Gd).

Science.gov (United States)

Lin, Xinsong; Tabassum, Danisa; Mar, Arthur

2015-12-14

A homologous series of ternary rare-earth zinc arsenides, prepared by reactions of the elements at 750 °C, has been identified with the formula RE(2-y)Zn4As4·n(REAs) (n = 2, 3, 4) for various RE members. They adopt trigonal structures: RE(4-y)Zn4As6 (RE = La-Nd), space group R3̄m1, Z = 3; RE(5-y)Zn4As7 (RE = Pr, Nd, Sm, Gd), space group P3̄m1, Z = 1; RE(6-y)Zn4As8 (RE = La-Nd, Sm, Gd), space group R3̄m1, Z = 3. The Zn atoms can be partially substituted by Mn atoms, resulting in quaternary derivatives RE(2-y)Mn(x)Zn(4-x)As4·n(REAs). Single-crystal structures were determined for nine ternary and quaternary arsenides RE(2-y)M4As4·n(REAs) (M = Mn, Zn) as representative examples of these series. The structures are built by stacking close-packed nets of As atoms, sometimes in very long sequences, with RE atoms occupying octahedral sites and M atoms occupying tetrahedral sites, resulting in an intergrowth of [REAs] and [M2As2] slabs. The recurring feature of all members of the homologous series is a sandwich of [M2As2]-[REAs]-[M2As2] slabs, while rocksalt-type blocks of [REAs] increase in thickness between these sandwiches with higher n. Similar to the previously known related homologous series REM(2-x)As2·n(REAs) which is deficient in M, this new series RE(2-y)M4As4·n(REAs) exhibits deficiencies in RE to reduce the electron excess that would be present in the fully stoichiometric formulas. Enthalpic and entropic factors are considered to account for the differences in site deficiencies in these two homologous series. Band structure calculations indicate that the semiconducting behaviour of the parent n = 0 member (with CaAl2Si2-type structure) gradually evolves, through a narrowing of the gap between valence and conduction bands, to semimetallic behaviour as the number of [REAs] blocks increases, to the limit of n = ∞ for rocksalt-type REAs.

Peeled film GaAs solar cell development

International Nuclear Information System (INIS)

Wilt, D.M.; Thomas, R.D.; Bailey, S.G.; Brinker, D.J.; DeAngelo, F.L.

1990-01-01

Thin film, single crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/Kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity (>10 6 ) of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofloric acid (HF). The intent of this work is to demonstrate the feasibility of using the peeled film technique to fabricate high efficiency, low mass GaAs solar cells. We have successfully produced a peeled film GaAs solar cell. The device, although fractured and missing the aluminum gallium arsenide (Al x Ga 1 - x As) window and antireflective (AR) coating, had a Voc of 874 mV and a fill factor of 68% under AMO illumination

Electrically Driven Photonic Crystal Nanocavity Devices

Science.gov (United States)

2012-01-01

material, here gallium arsenide and indium arsenide self- assembled quantum dots (QDs). QDs are preferred for the gain medium because they can have...blue points ) and 150 K (green points ). The black lines are linear fits to the above threshold output power of the lasers, which are used to find the...SHAMBAT et al.: ELECTRICALLY DRIVEN PHOTONIC CRYSTAL NANOCAVITY DEVICES 1707 Fig. 13. (a) Tilted SEM picture of a fabricated triple cavity device. The in

Indium Arsenide Nanowires

DEFF Research Database (Denmark)

Madsen, Morten Hannibal

-ray diffraction. InAs NWs can be used in a broad range of applications, including detectors, high speed electronics and low temperature transport measurements, but in this thesis focus will be put on biological experiments on living cells. Good control of Au-assisted InAs NW growth has been achieved......This thesis is about growth of Au-assisted and self-assisted InAs nanowires (NWs). The wires are synthesized using a solid source molecular beam epitaxy (MBE) system and characterized with several techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM) and x...... by a systematic study to optimize the growth conditions; first the Au deposition, then the growth temperature and finally the beam fluxes. For further control of the growth, Au droplets have been positioned with electron beam lithography and large scale arrays with a > 99 % yield have been made on 2 inch...

Polarization developments

International Nuclear Information System (INIS)

Prescott, C.Y.

1993-07-01

Recent developments in laser-driven photoemission sources of polarized electrons have made prospects for highly polarized electron beams in a future linear collider very promising. This talk discusses the experiences with the SLC polarized electron source, the recent progress with research into gallium arsenide and strained gallium arsenide as a photocathode material, and the suitability of these cathode materials for a future linear collider based on the parameters of the several linear collider designs that exist

Neutron spectra from radionuclide sources for cardiac pacemakers

International Nuclear Information System (INIS)

Kluge, H.

1975-01-01

Neutron spectra from Plutonium 238 radioisotope batteries powering cardiac pacemakers are measured in the energy range above 0.7 MeV. The results are used to calculate radiation doses within a cylindrical phantom. There are only minor differences between the different types of plutonium 238-batteries and californium 252-batteries

Non-stoichiometric nickel arsenides in nature: The structure of orcelite, Ni5−xAs2 (x = 0.25), from the Bon Accord oxide body, South Africa

International Nuclear Information System (INIS)

Bindi, Luca; Tredoux, Marian; Zaccarini, Federica; Miller, Duncan E.; Garuti, Giorgio

2014-01-01

Highlights: • The structure of natural orcelite has been solved for the first time. • The non-stoichiometry for orcelite previously reported was confirmed. • Non-stoichiometry could cause disorder phenomena during the crystal growth. - Abstract: The crystal structure of the mineral orcelite, a rare nickel arsenide reported in the literature with the formula Ni 5−x As 2 (with x = 0.23), was refined using intensity data collected from a crystal from the Bon Accord body, South Africa. This study revealed that the structure is hexagonal, space group P6 3 mc, with a = 6.7922(2), c = 12.4975(5) Å, and V = 499.31(3) Å 3 . The refinement of an anisotropic model led to an R index of 0.028 for 412 independent reflections. The orcelite structure can be described as a distorted variant of the Pd 5 Sb 2 structure. The smaller As atoms are in the centres of distorted tetragonal antiprisms, formed by only Ni atoms. The coordination sphere is completed with two additional Ni atoms opposite to the rectangular faces. Electron microprobe data carried out on the same crystal used for the structural study point to the following formula [on the basis of Σ(As + Fe + Sb)=2]: Ni 4.75 (As 1.93 Fe 0.05 Sb 0.02 ). According to the high-quality structure refinement, the minor elements were found to replace As in the structure. An atomic position for Ni was found to be partially occupied (75%), thus confirming the non-stoichiometry for the mineral orcelite previously reported in literature. Such a deviation from the stoichiometry could represent the driving force favouring disorder phenomena during the growth of the mineral

Single-event burnout of power MOSFET devices for satellite application

International Nuclear Information System (INIS)

Xue Yuxiong; Tian Kai; Cao Zhou; Yang Shiyu; Liu Gang; Cai Xiaowu; Lu Jiang

2008-01-01

Single-event burnout (SEB) sensitivity was tested for power MOSFET devices, JTMCS081 and JTMCS062, which were made in Institute of Microelectronics, Chinese Academy of Sciences, using californium-252 simulation source. SEB voltage threshold was found for devices under test (DUT). It is helpful for engineers to choose devices used in satellites. (authors)

Structural phase transition and elastic properties of AnAs (An= Th, U, Np, Pu) compounds at high pressure

International Nuclear Information System (INIS)

Aynyas, Mahendra; Arya, B.S.; Srivastava, Vipul; Sanyal, Sankar P.

2006-01-01

The high pressure behavior and pressure induced structural phase transition of mono arsenides (AnAs; An = Th, U, Np, Pu) have been investigated by using a three body interaction potential (TBI). This method has been found quite satisfactory in the case of other Rare-Earth compounds. The calculated compression curves of mono-arsenides obtained so have been compared with high pressure X-ray diffraction work. The theoretically predicted phase transition pressure and other structural properties for these compounds agree reasonably well with the measured values. (author)

Radioactive materials production

International Nuclear Information System (INIS)

Anon.

1985-01-01

The Radiochemical Processing Plant (RPP) at ORNL has served as the national repository and distribution center for 233 U for > 20 years. Several hundred kilograms of uranium, containing approximately 90 to 98% 233 U, are stored there in the form of metal, oxides, and nitrate solutions. All of these uranium materials contain small, but significant, concentrations of 232 U, ranging from 2 to 225 ppm. Most of the radioactivity associated with the 233 U comes from the decay daughters of 232 U (74-year half-life). The 252 Cf Industrial Sales/Loan Program involves loans of 252 Cf neutron sources to agencies of the US Government and sales of 252 Cf as the bulk oxide and as palladium-californium alloy pellets and wires. The program has been operated since 1968 in temporary facilities at the Savannah River Laboratory (SRL). The obsolete hot-cell facilities at SRL are now being decommissioned, and the program activities are being transferred to ORNL's Californium Facility in Bldg. 7930, which is managed by the staff of the Transuranium Processing Plant

Determination of trace elements in electronic materials by NAA

International Nuclear Information System (INIS)

Kobayashi, Kenji

1986-01-01

Trace amounts of elements in electronic materials were determined by instrumental neutron activation analysis (INAA), re-activation analysis and substoichiometric radioactivation analysis using gamma-ray spectrometry. Ten elements (Cr, Cu, Fe, Zn, Co, Eu, Ir, Sb, Sc, Tb) in gallium arsenide single crystal were determined by INAA and substoichiometric radioactivation analysis. Trace level of chromium (10 13 atoms/cm 3 ) and zinc (10 14 atoms/cm 3 ) in gallium arsenide single crystal were determined by INAA. The chromium concentrations in horizontal Bridgmangrown semi-insulating gallium arsenide ingot were ranged from 1.2 x 10 16 atoms/cm 3 at seed end to 3.5 x 10 16 atoms/cm 3 at tail end. The trace determinations of iron (10 14 atoms/cm 3 ) and copper (10 14 atoms/cm 3 ) in silicon, gallium arsenide and indium phoshide single crystals were carried out by substoichiometric radioactivation analysis. The reactivation analysis for the multielement determination of indium phosphide single crystal was carried out and nineteen elements were determined simultaneously by gamma-ray spectrometry. Eleven elements (Ag, As, Br, Co, Cr, Fe, K, Mn, Sb, Sc, Zn) in four NIES standard reference materials (Pond Sediment, Chlorella, Mussel and Tea Leaves) and seven elements (Co, Cr, Eu, Fe, Sc, Tb, Yb) in two NBS glasses (SRM-615 and SRM-613) were determined by INAA and substoichiometric radioactivation analysis and the analytical results obtained by the methods were in good agreement with certified values by NIES and NBS. (author)

Validation of the MCNP-DSP Monte Carlo code for calculating source-driven noise parameters of subcritical systems

International Nuclear Information System (INIS)

Valentine, T.E.; Mihalczo, J.T.

1995-01-01

This paper describes calculations performed to validate the modified version of the MCNP code, the MCNP-DSP, used for: the neutron and photon spectra of the spontaneous fission of californium 252; the representation of the detection processes for scattering detectors; the timing of the detection process; and the calculation of the frequency analysis parameters for the MCNP-DSP code

Magnetic measurements of the transuranium elements. Progress report, January 1, 1984-December 31, 1984

International Nuclear Information System (INIS)

Huray, P.G.; Nave, S.E.

1984-01-01

Measurements of the magnetic properties of dhcp californium-249 metal indicated the presence of three regions of differing magnetic character. Additional measurements are also reported. Magnetic moments and valence states of terbium in TbF 3 , BaTbO 3 , and TbO 1 8 are discussed. Progress on high-field operation of the micro-magnetic susceptometer is reported

Space station automation study: Automation requriements derived from space manufacturing concepts,volume 2

Science.gov (United States)

1984-01-01

Automation reuirements were developed for two manufacturing concepts: (1) Gallium Arsenide Electroepitaxial Crystal Production and Wafer Manufacturing Facility, and (2) Gallium Arsenide VLSI Microelectronics Chip Processing Facility. A functional overview of the ultimate design concept incoporating the two manufacturing facilities on the space station are provided. The concepts were selected to facilitate an in-depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, sensors, and artificial intelligence. While the cost-effectiveness of these facilities was not analyzed, both appear entirely feasible for the year 2000 timeframe.

Semiconducting III-V compounds

CERN Document Server

Hilsum, C; Henisch, Heinz R

1961-01-01

Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide).Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, f

Preparation and study of elemental californium-249

International Nuclear Information System (INIS)

Noe, M.; Peterson, J.R.

1975-01-01

Bulk samples of 249 Cf metal were prepared on the 10 μg scale via the Li metal vapor reduction of 249 CfF 3 . Above about 725 0 C elemental Cf exhibits a face-centered cubic (fcc) structure with an average, room-temperature lattice parameter of 5.75(1)A. Between about 600 0 C and 725 0 C, the stable form of Cf metal is another fcc structure with an average, room-temperature lattice parameter of 4.94(1)A. Below 600 0 C metallic Cf exhibits a double hexagonal closest packed (dhcp) structure with average, room temperature lattice parameters of a 0 = 3.39(1)A and c 0 = 11.01(5)A. By comparison of the metallic radii calculated for these three forms with those of the receding transuranium elements, it is suggested that the two, lower temperature modifications represent Cf with a metallic valence of three, while the highest temperature form represents a metallic valence of two. Although the data reported here are from the most complete study to date of elemental Cf, the limitations accompanying such microscale research are duly noted. (U.S.)

Non-stoichiometric nickel arsenides in nature: The structure of orcelite, Ni{sub 5−x}As{sub 2} (x = 0.25), from the Bon Accord oxide body, South Africa

Energy Technology Data Exchange (ETDEWEB)

Bindi, Luca, E-mail: luca.bindi@unifi.it [Dipartimento di Scienze della Terra, Università degli Studi di Firenze, via La Pira 4, I-50121 Firenze (Italy); Tredoux, Marian [Department of Geology, University of the Free State, Bloemfontein 9300 (South Africa); Zaccarini, Federica [Department of Applied Geosciences and Geophysics, University of Leoben, Peter Tunner str. 5, A-8700 Leoben (Austria); Miller, Duncan E. [Department of Geology, University of the Free State, Bloemfontein 9300 (South Africa); Garuti, Giorgio [Department of Applied Geosciences and Geophysics, University of Leoben, Peter Tunner str. 5, A-8700 Leoben (Austria)

2014-07-15

Highlights: • The structure of natural orcelite has been solved for the first time. • The non-stoichiometry for orcelite previously reported was confirmed. • Non-stoichiometry could cause disorder phenomena during the crystal growth. - Abstract: The crystal structure of the mineral orcelite, a rare nickel arsenide reported in the literature with the formula Ni{sub 5−x}As{sub 2} (with x = 0.23), was refined using intensity data collected from a crystal from the Bon Accord body, South Africa. This study revealed that the structure is hexagonal, space group P6{sub 3}mc, with a = 6.7922(2), c = 12.4975(5) Å, and V = 499.31(3) Å{sup 3}. The refinement of an anisotropic model led to an R index of 0.028 for 412 independent reflections. The orcelite structure can be described as a distorted variant of the Pd{sub 5}Sb{sub 2} structure. The smaller As atoms are in the centres of distorted tetragonal antiprisms, formed by only Ni atoms. The coordination sphere is completed with two additional Ni atoms opposite to the rectangular faces. Electron microprobe data carried out on the same crystal used for the structural study point to the following formula [on the basis of Σ(As + Fe + Sb)=2]: Ni{sub 4.75}(As{sub 1.93}Fe{sub 0.05}Sb{sub 0.02}). According to the high-quality structure refinement, the minor elements were found to replace As in the structure. An atomic position for Ni was found to be partially occupied (75%), thus confirming the non-stoichiometry for the mineral orcelite previously reported in literature. Such a deviation from the stoichiometry could represent the driving force favouring disorder phenomena during the growth of the mineral.

Solid-State Neutron Multiplicity Counting System Using Commercial Off-the-Shelf Semiconductor Detectors

Energy Technology Data Exchange (ETDEWEB)

Rozhdestvenskyy, S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2017-08-09

This work iterates on the first demonstration of a solid-state neutron multiplicity counting system developed at Lawrence Livermore National Laboratory by using commercial off-the-shelf detectors. The system was demonstrated to determine the mass of a californium-252 neutron source within 20% error requiring only one-hour measurement time with 20 cm² of active detector area.

Gallium arsenide injection lasers

International Nuclear Information System (INIS)

Thompson, G.H.B.

1975-01-01

The semiconductor injection laser includes a thin inner GaAs p-n junction layer between two outer GaAlAs layers which are backed by further thin outer GaAlAs layers with a heavier doping of AlAs. This reduces optical losses. Optical energy is further confined within the inner layers and the lasing threshold reduced by added outer GaAs layers of low electrical and thermal resistivity

Ion implantation in semiconductor bodies

International Nuclear Information System (INIS)

Badawi, M.H.

1984-01-01

Ions are selectively implanted into layers of a semiconductor substrate of, for example, semi-insulating gallium arsenide via a photoresist implantation mask and a metallic layer of, for example, titanium disposed between the substrate surface and the photoresist mask. After implantation the mask and metallic layer are removed and the substrate heat treated for annealing purposes. The metallic layer acts as a buffer layer and prevents possible contamination of the substrate surface, by photoresist residues, at the annealing stage. Such contamination would adversely affect the electrical properties of the substrate surface, particularly gallium arsenide substrates. (author)

Coherent light scattering from a buried dipole in a high-aperture optical system

International Nuclear Information System (INIS)

Vamivakas, A N; Mueller, T; Atatuere, M; Yurt, A; Koeklue, F H; Uenlue, M S

2011-01-01

We develop a theoretical formulation to calculate the absolute and differential transmission of a focused laser beam through a high-aperture optical system. The focused field interacts with a point dipole that is buried in a high-index material, and is situated at the Gaussian focus of the focusing and collection two-lens system. The derived expressions account for the vectorial nature of the focused electromagnetic field and the inhomogeneous focal region environment. The results obtained are in agreement with recent resonant light-scattering experiments where the buried emitter is an indium arsenide semiconductor quantum dot in gallium arsenide.

The effect of different solar simulators on the measurement of short-circuit current temperature coefficients

Science.gov (United States)

Curtis, H. B.; Hart, R. E., Jr.

1982-01-01

Gallium arsenide solar cells are considered for several high temperature missions in space. Both near-Sun and concentrator missions could involve cell temperatures on the order of 200 C. Performance measurements of cells at elevated temperatures are usually made using simulated sunlight and a matched reference cell. Due to the change in bandgap with increasing temperature at portions of the spectrum where considerable simulated irradiance is present, there are significant differences in measured short circuit current at elevated temperatures among different simulators. To illustrate this, both experimental and theoretical data are presented for gallium arsenide cells.

STANFORD: Highly polarized SLC electron beams

International Nuclear Information System (INIS)

Anon.

1993-01-01

Full text: Using specialized photocathodes made with 'strained' gallium arsenide, physicists at the Stanford Linear Accelerator Center (SLAC) have generated electron beams with polarizations in excess of 60 percent a year ahead of schedule. Together with recent luminosity increases, this breakthrough will have a major impact on the physics output of the Stanford Linear Collider (SLC). Beam polarization was almost tripled using photocathodes in which a gallium arsenide layer was grown epitaxially over a substrate of gallium arsenide phosphide. The mismatch between these two layers deforms the crystal structure and removes a degeneracy in the valence band structure, permitting selective optical pumping of one unique spin state. Whereas conventional gallium arsenide photocathodes are limited to 50 percent polarization because of this degeneracy (and realistic cathodes fall substantially below this theoretical limit), such strained crystal lattices have the potential to yield polarizations close to 100 percent. Polarization enhancement with strained lattices was first demonstrated in 1991 by a SLAC/Wisconsin/ Berkeley group (May 1991, page 6) with a 71 percent polarization in a laboratory experiment. More recently this group has achieved polarization in excess of 90 percent, reported last November at the Nagoya Spin Symposium. (In a complementary development, a Japanese KEK/ Nagoya/KEK obtains polarized beams using a 'superlattice' - May 1991, page 4.) The 1993 SLC run, the strained gallium arsenide photocathode technique's debut in an operating particle accelerator, has proved to be a resounding, unqualified success - as have physics experiments on the Z particles produced by the highly polarized beam. A conservative approach was called for, due to concerns about possible charge saturation effects. A relatively thick (0.3 micron) gallium arsenide layer was used for the photocathode in the SLC polarized electron source. With a titanium

Citric complexes of trivalent cerium and berkelium

International Nuclear Information System (INIS)

Boulhassa, S.

1977-01-01

The extraction by thenoyltrifluoroacetone (TTA) in benzene of trivalent cerium, berkelium and californium, at the indicator scale, hydrolysis and complexation by citric acid of these cations are studied. The radionuclides used were 144 Ce, 249 Bk and 249 Cf respectively γ, β and α emitters. The solvent extraction technique of the elements by TTA in benzene from a perchloric medium at the ionic stength 0.1 was employed. The distribution coefficients D were measured by the γ, β or α radiometry. Cerium and berkelium, which have a comparable redox behavior, show in solution a relatively stable valency IV. Therefore the study by solvent extraction of their trivalent form required the standing up of complete reducing conditions of these elements and their stabilization in solution at the valency III. The thermodynamic data obtained for berkelium and californium contribute to understand the chemistry of these elements and permit to complete the third 'tetrad branch' of 5f elements from Cm 3+ to Es 3+ . This tetrad effect is a manifestation of thermodynamic consequence of the 'nephelauxetic effect'. As for Ce(III), the data confirm the pronounced acid property and may be show no neglected ligand effect for f 1 configuration [fr

Directed evolution of the periodic table: probing the electronic structure of late actinides.

Science.gov (United States)

Marsh, M L; Albrecht-Schmitt, T E

2017-07-25

Recent investigations of the coordination chemistry and physical properties of berkelium (Z = 97) and californium (Z = 98) have revealed fundamental differences between post-curium elements and lighter members of the actinide series. This review highlights these developments and chronicles key findings and concepts from the last half-century that have helped usher in a new understanding of the evolution of electronic structure in the periodic table.

Properties of neutron sources

International Nuclear Information System (INIS)

1987-03-01

The Conference presentations were divided into sessions devoted to the following topics: white neutron sources, primarily pulsed (6 papers); fast neutron fields (5 papers); Californium-252 prompt fission neutron spectra (14 papers); monoenergetic sources and filtered beams (11 papers); 14 MeV neutron sources (10 papers); selected special application (one paper); and a general interest session (4 papers). Individual abstracts were prepared separately for the papers

Surface temperature measurements for ion-bombarded Si and GaAs at 1.0 to 2.0 MeV

International Nuclear Information System (INIS)

Lowe, L.F.; Kennedy, J.K.; Davies, D.E.; Deane, M.L.; Eyges, L.J.

1975-01-01

Surface temperatures of ion-bombarded silicon and gallium arsenide have been measured using an infrared detector. Ion beams of N + , N + 2 , O + , O + 2 , C + , CO + , and H + were used at energies from 1--2.0 MeV and at current densities up to 12 μAcenter-dotcm/sup -2/. No temperature dependence was found on ion species, energy, or current. The change in temperature depended only on beam power, target material, and sample mounting technique. With proper mounting temperature increases of 20 degreeC for silicon and 65 degreeC for gallium arsenide were observed for a beam power density of 1.0 Wcenter-dotcm/sup -2/

Mechanisms of Current Transfer in Electrodeposited Layers of Submicron Semiconductor Particles

Science.gov (United States)

Zhukov, N. D.; Mosiyash, D. S.; Sinev, I. V.; Khazanov, A. A.; Smirnov, A. V.; Lapshin, I. V.

2017-12-01

Current-voltage ( I- V) characteristics of conductance in multigrain layers of submicron particles of silicon, gallium arsenide, indium arsenide, and indium antimonide have been studied. Nanoparticles of all semiconductors were obtained by processing initial single crystals in a ball mill and applied after sedimentation onto substrates by means of electrodeposition. Detailed analysis of the I- V curves of electrodeposited layers shows that their behavior is determined by the mechanism of intergranular tunneling emission from near-surface electron states of submicron particles. Parameters of this emission process have been determined. The proposed multigrain semiconductor structures can be used in gas sensors, optical detectors, IR imagers, etc.

Computer-assisted nuclear fuel manufacture

International Nuclear Information System (INIS)

Maloney, J.P.; Schaumann, S.M.; Stone, E.

1976-01-01

At the ERDA Savannah River Plant, a process monitor, which incorporates an online digital computer, assists in manufacturing fuel elements used to produce nuclides such as plutonium, tritium, and californium in the plant's nuclear reactors. Also, inventory functions assist in safeguarding fissile material and protecting against accidental nuclear criticality. Terminals at strategic locations throughout the process area enable production operators to send and receive instructions and information on each manufacturing step

Automated absolute activation analysis with californium-252 sources

International Nuclear Information System (INIS)

MacMurdo, K.W.; Bowman, W.W.

1978-09-01

A 100-mg 252 Cf neutron activation analysis facility is used routinely at the Savannah River Laboratory for multielement analysis of many solid and liquid samples. An absolute analysis technique converts counting data directly to elemental concentration without the use of classical comparative standards and flux monitors. With the totally automated pneumatic sample transfer system, cyclic irradiation-decay-count regimes can be pre-selected for up to 40 samples, and samples can be analyzed with the facility unattended. An automatic data control system starts and stops a high-resolution gamma-ray spectrometer and/or a delayed-neutron detector; the system also stores data and controls output modes. Gamma ray data are reduced by three main programs in the IBM 360/195 computer: the 4096-channel spectrum and pertinent experimental timing, counting, and sample data are stored on magnetic tape; the spectrum is then reduced to a list of significant photopeak energies, integrated areas, and their associated statistical errors; and the third program assigns gamma ray photopeaks to the appropriate neutron activation product(s) by comparing photopeak energies to tabulated gamma ray energies. Photopeak areas are then converted to elemental concentration by using experimental timing and sample data, calculated elemental neutron capture rates, absolute detector efficiencies, and absolute spectroscopic decay data. Calculational procedures have been developed so that fissile material can be analyzed by cyclic neutron activation and delayed-neutron counting procedures. These calculations are based on a 6 half-life group model of delayed neutron emission; calculations include corrections for delayed neutron interference from 17 O. Detection sensitivities of 239 Pu were demonstrated with 15-g samples at a throughput of up to 140 per day. Over 40 elements can be detected at the sub-ppM level

Savannah River Plant californium-252 Shuffler electronics manual

International Nuclear Information System (INIS)

Bourret, S.C.; Crane, T.W.; Eccleston, G.W.; Gallegos, E.A.; Garcia, D.L.

1980-03-01

Detailed information is presented in this report, an electronics manual for the Savannah River Plant Shuffler, about the electronics associated with the various control and data acquisition functions of the Shuffler subsystems. Circuit diagrams, interconnection information, and details about computer control and programming are included

Savannah River Plant Californium-252 Shuffler software manual

International Nuclear Information System (INIS)

Johnson, S.S.; Crane, T.W.; Eccleston, G.W.

1979-03-01

A software manual for operating the Savannah River Plant Shuffler nondestructive assay instrument is presented. The procedures for starting up the instrument, making assays, calibrating, and checking the performance of the hardware units are described. A list of the error messages with an explanation of the circumstances prompting the message and possible corrective measures is given. A summary of the software package is included showing the names and contents of the files and subroutines. The procedure for modifying the software package is outlined

Characterizing and engineering tunable spin functionality inside indium arsenide/gallium arsenide quantum dot molecules

Science.gov (United States)

Liu, Weiwen

The continual downsizing of the basic functional units used in the electronics industry has motivated the study of the quantum computation and related topics. To overcome the limitations of classical physics and engineering, some unique quantum mechanical features, especially entanglement and superpositions have begun to be considered as important properties for future bits. Including these quantum mechanical features is attractive because the ability to utilize quantum mechanics can dramatically enhance computational power. Among the various ways of constructing the basic building blocks for quantum computation, we are particularly interested in using spins inside epitaxially grown InAs/GaAs quantum dot molecules as quantum bits (qubits). The ability to design and engineer nanostructures with tailored quantum properties is critical to engineering quantum computers and other novel electro-optical devices and is one of the key challenges for scaling up new ideas for device application. In this thesis, we will focus on how the structure and composition of quantum dot molecules can be used to control spin properties and charge interactions. Tunable spin and charge properties can enable new, more scalable, methods of initializing and manipulating quantum information. In this thesis, we demonstrate one method to enable electric-field tunability of Zeeman splitting for a single electron spin inside a quantum dot molecules by using heterostructure engineering techniques to modify the barrier that separates quantum dots. We describe how these structural changes to the quantum dot molecules also change charge interactions and propose ways to use this effect to enable accurate measurement of coulomb interactions and possibly charge occupancy inside these complicated quantum dot molecules.

Accurate determination of light elements by charged particle activation analysis

International Nuclear Information System (INIS)

Shikano, K.; Shigematsu, T.

1989-01-01

To develop accurate determination of light elements by CPAA, accurate and practical standardization methods and uniform chemical etching are studied based on determination of carbon in gallium arsenide using the 12 C(d,n) 13 N reaction and the following results are obtained: (1)Average stopping power method with thick target yield is useful as an accurate and practical standardization method. (2)Front surface of sample has to be etched for accurate estimate of incident energy. (3)CPAA is utilized for calibration of light element analysis by physical method. (4)Calibration factor of carbon analysis in gallium arsenide using the IR method is determined to be (9.2±0.3) x 10 15 cm -1 . (author)

Solar-Electrochemical Power System for a Mars Mission

Science.gov (United States)

Withrow, Colleen A.; Morales, Nelson

1994-01-01

This report documents a sizing study of a variety of solar electrochemical power systems for the intercenter NASA study known as 'Mars Exploration Reference Mission'. Power systems are characterized for a variety of rovers, habitation modules, and space transport vehicles based on requirements derived from the reference mission. The mission features a six-person crew living on Mars for 500 days. Mission power requirements range from 4 kWe to 120 kWe. Primary hydrogen and oxygen fuel cells, regenerative hydrogen and oxygen fuel cells, sodium sulfur batteries advanced photovoltaic solar arrays of gallium arsenide on germanium with tracking and nontracking mechanisms, and tent solar arrays of gallium arsenide on germanium are evaluated and compared.

Geology and mineralogy of the Cu-Ni-Co-U ore deposits at Talmessi and Meskani, Central Iran

International Nuclear Information System (INIS)

Tarkian, M.; Bock, W.D.; Neumann, M.

1983-01-01

Polymetallic hydrothermal veins and impregnations carry copper-iron sulphides (bornite, chalcopyrite, digenite, chalcocite) and nickel-cobalt arsenides (niccolite, rammelsbergite, safflorite, skutterudite) with bismuth and uranium as well as some copper arsenides (domeykite, koutekite etc.) in two dormant mines in the Anarak District. The geological and tectonic framework and the mineral associations of both occurrences have been investigated in detail. Both mineralization can be attributed to Tertiary magmatism, but were deposited in two temporally distinct periods. The older copper sulphide minerealization is structurally controlled by pre-middle Eocene tectronics and is linked to Eocene shoshonitic volcanism. The second, younger nickel-cobalt-silver-bismuth-uranium mineralization might be attributed to a granitic magmatism linked to a Miocene phase of movement. (Authors)

Circuit quantum electrodynamics with a spin qubit.

Science.gov (United States)

Petersson, K D; McFaul, L W; Schroer, M D; Jung, M; Taylor, J M; Houck, A A; Petta, J R

2012-10-18

Electron spins trapped in quantum dots have been proposed as basic building blocks of a future quantum processor. Although fast, 180-picosecond, two-quantum-bit (two-qubit) operations can be realized using nearest-neighbour exchange coupling, a scalable, spin-based quantum computing architecture will almost certainly require long-range qubit interactions. Circuit quantum electrodynamics (cQED) allows spatially separated superconducting qubits to interact via a superconducting microwave cavity that acts as a 'quantum bus', making possible two-qubit entanglement and the implementation of simple quantum algorithms. Here we combine the cQED architecture with spin qubits by coupling an indium arsenide nanowire double quantum dot to a superconducting cavity. The architecture allows us to achieve a charge-cavity coupling rate of about 30 megahertz, consistent with coupling rates obtained in gallium arsenide quantum dots. Furthermore, the strong spin-orbit interaction of indium arsenide allows us to drive spin rotations electrically with a local gate electrode, and the charge-cavity interaction provides a measurement of the resulting spin dynamics. Our results demonstrate how the cQED architecture can be used as a sensitive probe of single-spin physics and that a spin-cavity coupling rate of about one megahertz is feasible, presenting the possibility of long-range spin coupling via superconducting microwave cavities.

Computer-assisted nuclear fuel manufacture

International Nuclear Information System (INIS)

Maloney, J.P.; Schaumann, C.M.; Stone, E.

1976-06-01

At the ERDA Savannah River Plant, a process monitor, which incorporates an online digital computer, assists in manufacturing fuel elements used to produce nuclides such as plutonium, tritium, and californium in the plant's nuclear reactors. Also, inventory functions assist in safeguarding fissile material and protecting against accidental nuclear criticality. Terminals at strategic locations throughout the process area enable production operators to send and receive instructions and information on each manufacturing step. 11 fig

NASA-OAST photovoltaic energy conversion program

Science.gov (United States)

Mullin, J. P.; Loria, J. C.

1984-01-01

The NASA program in photovoltaic energy conversion research is discussed. Solar cells, solar arrays, gallium arsenides, space station and spacecraft power supplies, and state of the art devices are discussed.

Inter-granular current in iron-oxypnictide superconductors

International Nuclear Information System (INIS)

Tamegai, T.; Tsuchiya, Y.; Nakajima, Y.; Kamihara, Y.; Hosono, H.

2010-01-01

Inter- and intragranular currents, J c inter and J c intra , in LaFePO 0.94 F 0.06 polycrystalline sample are evaluated by measuring the remanent-state field profile using magneto-optical imaging method. Obtained images show the absence of magnetic field modulation associated with the weak-link nature of grain boundaries, indicating that J c inter and J c intra are comparable in magnitude in contrast to other iron-arsenide superconductors. J c inter is estimated to be 2 x 10 4 A/cm 2 in the limit of T = 0 K, which is larger than the values in other iron-arsenide superconductors. Implication of these J c behavior is discussed in relation with possible pairing symmetries.

The protective cell petrus for the production of californium 252; Cellule blindee petrus pour la production et l'etude du californium 252

Energy Technology Data Exchange (ETDEWEB)

Sontag, R; Berger, R [Commissariat a l' Energie Atomique, Fontenay-aux-Roses (France). Centre d' Etudes Nucleaires

1967-07-01

The alpha, beta, gamma, neutron cell which is described in the present paper is devoted to the transplutonium element production and study. It is located at the CEN in Fontenay-aux-Roses (France). The 4 feet ordinary concrete shielding made of stacked blocs allows the manipulation of radioactive sources as high as 1000 curies of 1 MeV gamma rays and with a fast neutrons flux of 10{sup 9} n.cm{sup -2}.s{sup -1}. The airtight alpha containment box is equipped with two transfer systems, one consists of a parallelepiped shaped airtight box located in a turntable, the other uses standard cylindrical containers made of polyethylene. The general equipment and the main setting up are also described. (authors) [French] La cellule alpha, beta, gamma, neutron, qui fait l'objet du present article, est destinee a la production et a l'etude des elements transplutoniens. Elle est construite au C.E.N. de Fontenay-aux-Roses (France). La protection biologique, calculee pour une activite de 1000 curies de rayonnement gamma d'energie 1 MeV accompagnee d'un flux de neutrons rapides de 10{sup 9}/cm{sup 2}s, est constituee par des parois en beton de 1,20 m d'epaisseur. L'enceinte alpha est une boite etanche qui comporte devx systemes de transferts: l'un consiste en une boite parallelepipedique etanche logee dans un barillet, l'autre fait appel a des recipients cylindriques standard en polyethylene. L'equipement general et les installations les plus importantes sont ensuite decrits. (auteurs)

Heavy ion tests on programmable VLSI

International Nuclear Information System (INIS)

Provost-Grellier, A.

1989-11-01

The radiation from space environment induces operation damages in onboard computers systems. The definition of a strategy, for the Very Large Scale Integrated Circuitry (VLSI) qualification and choice, is needed. The 'upset' phenomena is known to be the most critical integrated circuit radiation effect. The strategies for testing integrated circuits are reviewed. A method and a test device were developed and applied to space applications candidate circuits. Cyclotron, synchrotron and Californium source experiments were carried out [fr

Charge breeding of radioactive isotopes at the CARIBU facility with an electron beam ion source

Science.gov (United States)

Vondrasek, R. C.; Dickerson, C. A.; Hendricks, M.; Ostroumov, P.; Pardo, R.; Savard, G.; Scott, R.; Zinkann, G.

2018-05-01

An Electron Beam Ion Source Charge Breeder (EBIS-CB) has been developed at Argonne National Laboratory as part of the californium rare ion breeder upgrade. For the past year, the EBIS-CB has been undergoing commissioning as part of the ATLAS accelerator complex. It has delivered both stable and radioactive beams with A/Q 18% into a single charge state. The operation of this device, challenges during the commissioning phase, and future improvements will be discussed.

Safety analysis report for packaging: neutron shipping cask, model 0.5T

International Nuclear Information System (INIS)

Peterson, R.T.

1976-01-01

The Safety Analysis Report for Packaging demonstrates that the neutron shipping cask can safely transport, in solid or powder form, all isotopes of uranium, plutonium, americium, curium, berkelium, californium, einsteinium, and fermium. The shipping cask and its contents are described. It also evaluates transport conditions, structural parameters (e.g., load resistance, pressure and impact effects, lifting and tiedown devices), and shielding. Finally, it discusses compliance with Chapter 0529 of the Energy Research and Development Administration Manual

NWIS casting measurements taken during demonstrations to Russian visitors

International Nuclear Information System (INIS)

Mullens, J.A.; Valentine, T.E.; Mihalczo, J.T.

1998-01-01

This report describes a set of NWIS measurements made during demonstrations to Russian visitors on August 28, 1997. These measurements will be given to the Russian visitors from Arzamus-16 as part of their NWIS training (part of a DOE laboratory-to-laboratory exchange program). These measurements are made on standard highly enriched Uranium annular castings (as used for storage). Associated NWIS calibration runs were made in air (no casting, just the NWIS Californium source and detectors)

Health physics aspects of 252Cf

International Nuclear Information System (INIS)

Bhagwat, A.M.

1974-01-01

After briefly describing the methods of production, radioactive, chemical and biological properties of californium-252, its health physics aspects are reviewed in detail. Its external and internal radiation hazards can be minimised through control of radiation and contamination and proper shield design. Use of various shielding materials is evaluated. The following aspects are also discussed : (1) radiation detectors for neutrons and gamma radiation (2) personnel monitoring techniques (3) bioassay and (4) storage and transportation. (M.G.B.)

Heat load of a GaAs photocathode in an SRF electron gun

International Nuclear Information System (INIS)

Wang Erdong; Zhao Kui; Jorg Kewisch; Ilan Ben-Zvi; Andrew Burrill; Trivini Rao; Wu Qiong; Animesh Jain; Ramesh Gupta; Doug Holmes

2011-01-01

A great deal of effort has been made over the last decades to develop a better polarized electron source for high energy physics. Several laboratories operate DC guns with a gallium arsenide photocathode, which yield a highly polarized electron beam. However, the beam's emittance might well be improved by using a superconducting radio frequency (SRF) electron gun, which delivers beams of a higher brightness than that from DC guns because the field gradient at the cathode is higher. SRF guns with metal and CsTe cathodes have been tested successfully. To produce polarized electrons, a Gallium-Arsenide photo-cathode must be used: an experiment to do so in a superconducting RF gun is under way at BNL. Since a bulk gallium arsenide (GaAs) photocathode is normal conducting, a problem arises from the heat load stemming from the cathode. We present our measurements of the electrical resistance of GaAs at cryogenic temperatures, a prediction of the heat load and verification by measuring the quality factor of the gun with and without the cathode at 2 K. We simulate heat generation and flow from the GaAs cathode using the ANSYS program. By following the findings with the heat load model, we designed and fabricated a new cathode holder (plug) to decrease the heat load from GaAs. (authors)

RF-MMW Dipole Antenna Arrays From Laser Illuminated GaAs

National Research Council Canada - National Science Library

Umphenour, D

1998-01-01

High resistivity photoconductive Gallium Arsenide (GaAs) can be used as elemental Hertzian dipole antenna arrays in which the time varying dipole current is produced by temporally modulating a laser (0.63um...

Survey of potential markets for devices using Californium-252

International Nuclear Information System (INIS)

Permar, P.H.

1975-01-01

Potential applications for devices or systems containing 252 Cf in the years from 1975 to 1980 are estimated. The estimated number of devices and associated business value were derived from a survey of 46 industrial, educational and governmental organizations conducted from Jan. to May, 1975. Applications for devices and systems based on 252 Cf are expected to increase by a factor of 7 in the 6-y period from 1975 to 1980. The annual business value of 252 Cf devices should increase from 1.5 million dollars in 1975 to 10.8 million dollars in 1980. The potential European market should be several times as large as the US market, based on actual sales of 252 Cf, which have been two to four times greater in Europe than in the US

Californium-252 interstitial implants in carcinoma of the tongue

International Nuclear Information System (INIS)

Vtyurin, B.M.; Ivanov, V.N.; Medvedev, V.S.; Galantseva, G.F.; Abdulkadyrov, S.A.; Ivanova, L.F.; Petrovskaya, G.A.; Plichko, V.I.

1985-01-01

A clinical study using 252 Cf sources in brachytherapy of tumors began in the Research Institute of Medical Radiology of the Academy of Medical Sciences of the USSR in 1973. 252 Cf afterloading cells were utilized by the method of simple afterloading. Dosimetry and radiation protection of medical personnel were developed. To substantiate optimal therapeutic doses of 252 Cf neutrons, a correlation of dose, time, and treatment volume factors with clinical results of 252 Cf interstitial implants in carcinoma of the tongue for 47 patients with a minimum follow-up period of 1 year was studied. Forty-nine interstitial implants have been performed. Seventeen patients received 252 Cf implants alone (Group I), 17 other patients received 252 Cf implants in combination with external radiation (Group II), and 15 patients were treated with interstitial implants for recurrent or residual tumors (Groups III). Complete regression of carcinoma of the tongue was obtained in 48 patients (98%). Thirteen patients (27%) developed radiation necrosis. The therapeutic dose of neutron radiation from 252 Cf sources in interstitial radiotherapy of primary tongue carcinomas (Group I) was found to be 7 to 9 Gy. Optimal therapeutic neutron dose in combined interstitial and external radiotherapy of primary tumors (Group II) was 5 to 6 Gy with an external radiation dose of 40 Gy. For recurrent and residual tumors (Group III), favorable results were obtained with tumor doses of 6.5 to 7 Gy

Undergraduate experiments using the neutron radiation from californium-252

International Nuclear Information System (INIS)

Rossel, J.; Golecki, I.

1976-01-01

Three experiments designed to demonstrate and measure several properties of the neutron radiation emitted by a 3μg 252 Cf source are described. The experiments constitute a special project carried out by a third-year undergraduate student at the Institute of Physics of the University of Neuchatel. The 252 Cf source is enclosed in a shield which allows a pencil of fast neutrons to pass through a central tube, while reducing the ambient radiation below the tolerance level. The shield consists of layers of borated paraffin wax, iron and cadmium. The first experiment uses an air-alcohol diffusion cloud chamber for the demonstration of tracks of recoil protons produced by the neutrons. Semi-quantitative measurements of track lengths give the correct order of magnitude of the proton energies. In the second experiment a liquid scintillator detector is used to scan the beam profile across the radiation shield enclosing the source. A pulse-shape-discrimination system discriminates between neutrons and gamma photons. The third experiment makes use of the nuclear emulsion technique to study the neutron energy distribution of 252 Cf. Preliminary results are compared with published values. (author)

Activities of the Solid State Physics Research Institute

Science.gov (United States)

1985-01-01

Topics addressed include: muon spin rotation; annealing problems in gallium arsenides; Hall effect in semiconductors; computerized simulation of radiation damage; single-nucleon removal from Mg-24; and He-3 reaction at 200 and 400 MeV.

Electron transport in erbium arsenide:indium gallium(aluminum)arsenide metal/semiconductor nanocomposites for thermoelectric power generation

Science.gov (United States)

Bahk, Je-Hyeong

Electron transport in thin film ErAs:InGa(Al)As metal/semiconductor nanocomposite materials grown by molecular beam epitaxy is investigated experimentally and theoretically for efficient thermoelectric power generation. Thermoelectric properties such as the Seebeck coefficient, the electrical conductivity, and the thermal conductivity are measured for the various compositions of the material up to 840 K. A special sample preparation method is proposed to protect the thin films from damage and/or decomposition, and prevent the parasitic substrate conduction effect during the high temperature measurements. The sample preparation method includes surface passivation, high temperature metallization with a diffusion barrier, and the covalent oxide bonding technique for substrate removal. The experimental results for the nanocomposite materials are analyzed using the Boltzmann transport equation under the relaxation time approximation. The scattering characteristics of free electrons in the InGa(Al)As is defined by four major scattering mechanisms such as the polar optical phonon scattering, the ionized impurity scattering, the alloy scattering, and the acoustic phonon deformation potential scattering. Combining these scattering mechanisms, the electron transport model successfully fits the temperature-dependent thermoelectric properties of Si-doped InGaAlAs materials, and predicts the figure of merits at various doping levels in various Al compositions. The nanoparticle-electron interaction is modeled as a momentum scattering for free electrons caused by the electrostatic potential perturbation around nanoparticles and the band offset at the interface. The ErAs nanoparticles are assumed to be semi-metals that can donate electrons to the matrix, and positively charged after the charge transfer to build up the screened coulomb potential outside them. The nanoparticle scattering rate is calculated for this potential profile using the partial wave method, and used to analyze the enhancement of the Seebeck coefficient. Finally, the experimental results for the various compositions of the ErAs:InGa(Al)As nanocomposites are fit using the electron transport model and the nanoparticle scattering. It is shown that nanoparticle scattering can enhance the power factor via energy-dependent electron scattering in ErAs:InGaAs system. The figure of merit for the 0.6% ErAs:(InGaAs)0.8(InAlAs) 0.2 lattice matched to InP is measured to be 1.3 at 800 K, and the theory predicts that it can reach 1.9 at 1000 K.

Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs) Photoconductive Semiconductor Switch (PCSS) Fabrication

Science.gov (United States)

2016-09-27

it as-grown and it densifies as the H leaves when annealed above approximately 500 °C. This densification causes the film to contract, becoming...tensile. The final deposition recipe shown in the Appendix, Section 2 was found after numerous trials and results in a minimum between compressive...marks b) ULVAC etch: 500 -W ICP, 50-W RIE, 4 mT, 16-sccm BCl3, 4-sccm Ar, 12 s (~50 nm)  GaAs etches at 7.54 nm/s after 6-s etch delay. PR etches at

Safety analysis report for packaging: neutron shipping cask, model 4T

International Nuclear Information System (INIS)

Peterson, R.T.

1977-01-01

This Safety Analysis Report for Packaging demonstrates that the neutron shipping cask can safely transport, in solid or powder form, all isotopes of uranium, plutonium, americium, curium, berkelium, californium, einsteinium, and fermium. The cask and its contents are described. It also evaluates transport conditions, structural parameters (e.g., load resistance, pressure and impact effects, lifting and tiedown devices), and shielding. Finally, it discusses compliance with Chapter 0529 of the Energy Research and Development Administration Manual, Safety Standards for the Packaging of Fissile and Other Radioactive Materials

Coupled Photonic Crystal Cavity Array Laser

DEFF Research Database (Denmark)

Schubert, Martin

in the quadratic lattice. Processing techniques are developed and optimized in order fabricate photonic crystals membranes in gallium arsenide with quantum dots as gain medium and in indium gallium arsenide phosphide with quantum wells as gain medium. Several key issues in process to ensure good quality....... The results are in good agreement with standard coupled mode theory. Also a novel type of photonic crystal structure is proposed called lambda shifted cavity which is a twodimensional photonic crystal laser analog of a VCSEL laser. Detailed measurements of the coupled modes in the photonic crystals...... with quantum dots are carried out. In agreement with a simple gain model the structures do not show stimulated emission. The spectral splitting due to the coupling between single cavities as well as arrays of cavities is studied theoretically and experimentally. Lasing is observed for photonic crystal cavity...

Metamaterial-Enhanced Nonlinear Terahertz Spectroscopy

Directory of Open Access Journals (Sweden)

Zhang X.

2013-03-01

Full Text Available We demonstrate large nonlinear terahertz responses in the gaps of metamaterial split ring resonators in several materials and use nonlinear THz transmission and THz-pump/THz-probe spectroscopy to study the nonlinear responses and dynamics. We use the field enhancement in the SRR gaps to initiate high-field phenomena at lower incident fields. In vanadium dioxide, we drive the insulator-to-metal phase transition with high-field THz radiation. The film conductivity increases by over two orders of magnitude and the phase transition occurs on a several picosecond timescale. In gallium arsenide, we observe high-field transport phenomena, including mobility saturation and impact ionization. The carrier density increases by up to ten orders of magnitude at high fields. At the highest fields, we demonstrate THz-induced damage in both vanadium dioxide and gallium arsenide.

POLLUTION PREVENTION IN THE SEMICONDUCTOR INDUSTRY THROUGH RECOVERY AND RECYCLING OF GALLIUM AND ARSENIC FROM GAAS POLISHING WASTES

Science.gov (United States)

A process was developed for the recovery of both arsenic and gallium from gallium arsenide polishing wastes. The economics associated with the current disposal techniques utilizing ferric hydroxide precipitation dictate that sequential recovery of toxic arsenic and valuble galliu...

OM85. Basic Properties of Optical Materials Summaries of Papers.

Science.gov (United States)

1985-05-01

1984. [2] D. Marcuse : IEEE J. QE-14, 736 (1978). 163 ... . . . .. . . .. . . CALORIMETRIC MEASUREMENT OF OPTICAL ABSORPTION IN SAPPHIRE AT VISIBLE...ARSENIDE Herbert S. Bennett Semiconductor Devices and Circuits Division National Bureau of Standards Gaithersburg, MD 20899 Introduction Lasers, opto

Face to Face The IGBT and its Creator

Indian Academy of Sciences (India)

IAS Admin

HC: At RPI you had the chance to work on Indium Gallium Arsenide (InGaAs) ..... Safe operating area denotes the current and voltage conditions under which ... conditioning, refrigeration and so on, but what is the impact on the environment?

Suitability of integrated protection diodes from diverse semiconductor technologies

NARCIS (Netherlands)

van Wanum, Maurice; Lebouille, Tom; Visser, Guido; van Vliet, Frank Edward

2009-01-01

Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are

Modulation of fluorescence signals from biomolecules along nanowires due to interaction of light with oriented nanostructures

DEFF Research Database (Denmark)

Frederiksen, Rune Schøneberg; Alarcon-Llado, Esther; Madsen, Morten H.

2015-01-01

High aspect ratio nanostructures have gained increasing interest as highly sensitive platforms for biosensing. Here, well-defined biofunctionalized vertical indium arsenide nanowires are used to map the interaction of light with nanowires depending on their orientation and the excitation waveleng...

Configurational rearrangements of bistable centers in covalent semiconductors - phase transitions of the second type

International Nuclear Information System (INIS)

Ivanyukovich, V.A.; Karas', V.I.; Lomako, V.M.

1989-01-01

A new radiation configurational-bistable defect diffring from the known similar defects by the fact that it possessestemperature inversion of states is detected in gallium arsenide. Configurational-bistable rearrangements are shown to be considered as phase transitions of the second type

Neutron transmutation doping of gallium arsenide

International Nuclear Information System (INIS)

Alexiev, D.

1987-12-01

Neutron transmutation doping (NTD) was studied as a means of compensating p-type Cd-doped GaAs. By introducing specific donor concentrations, the net acceptor level was measured and showed a progressive reduction. The NTD constant K = 0.32 donor atoms.cm 3 per cm 2 was also measured. Radiation damage caused by neutron bombardment was annealed and no additional traps were generated

Gallium Arsenide and Related Compounds, 1986.

Science.gov (United States)

1986-01-01

F-Yiuang, WL,, PK Rhattacharva, UDas, A Chin , IJlackson and D L Persechini 417 -422 High quality lattice matched lnGaAs/InP heterostructures prepared...Sci. Technol. B3 1162. Schwartz G. P. 1983 Thin solid Films 103 3. Spicer W. E., Lindau I., Skeath P. R., Su C Y. and Chye P. W. 19R0 Phys. Rev. Lett... Chin R, Nakano K, and Milano R A 1981 IEEE J. Quantum Electron. QEJJ7, 275. Murgatroyd I J, Norman A G, and Booker G R 1986 Phys. Rev. Lett

The origin of the Avram Iancu U-Ni-Co-Bi-As mineralization, Băiţa (Bihor) metallogenic district, Bihor Mts., Romania

Science.gov (United States)

Zajzon, Norbert; Szentpéteri, Krisztián; Szakáll, Sándor; Kristály, Ferenc

2015-10-01

The Băiţa metallogenic district in the Bihor Mountains is a historically important mining area in Romania. Uranium mining took place between 1952 and 1998 from various deposits, but very little is known about the geology and mineralogy of these deposits. In this paper, we describe geology and mineralogy of uranium mineralization of the Avram Iancu uranium mine from waste dump samples collected before complete remediation of the site. Texturally and mineralogically complex assemblages of nickeline, cobaltite-gersdorffite solid solution, native Bi, Bi-sulfosalts, molybdenite, and pyrite-chalcopyrite-sphalerite occur with uraninite, "pitchblende," and brannerite in most of the ore samples. The association of nickel, cobalt, and arsenic with uranium is reminiscent of five-element association of vein type U-Ni-Co-Bi-As deposits; however, the Avram Iancu ores appear to be more replacement-type stratiform/stratabound. Avram Iancu ore samples contain multistage complex, skarn, uranium sulfide, arsenide assemblages that can be interpreted to have been formed in the retrograde cooling stages of the skarn hydrothermal system. This mineralizing system may have built-up along Upper Cretaceous-Paleogene "Banatite" intrusions of diorite-to-granite composition. The intrusions crosscut the underlying uraniferous Permian formations in the stacked NW-verging Biharia Nappe System. The mineralization forms stacked, multilayer replacement horizons, along carbonate-rich lithologies within the metavolcanic (tuffaceous) Muncel Series. Mineral paragenesis and some mineral chemistry suggest moderate-to-high <450, i.e., 350-310 °C, formation temperatures for the uranium sulfide stage along stratigraphically controlled replacement zones and minor veins. Uranium minerals formed abundantly in this early stage and include botryoidal, sooty and euhedral uraninite, brannerite, and coffinite. Later and/or lower-temperature mineral assemblages include heterogeneous, complexly zoned arsenide

Method for measuring multiple scattering corrections between liquid scintillators

Energy Technology Data Exchange (ETDEWEB)

Verbeke, J.M., E-mail: verbeke2@llnl.gov; Glenn, A.M., E-mail: glenn22@llnl.gov; Keefer, G.J., E-mail: keefer1@llnl.gov; Wurtz, R.E., E-mail: wurtz1@llnl.gov

2016-07-21

A time-of-flight method is proposed to experimentally quantify the fractions of neutrons scattering between scintillators. An array of scintillators is characterized in terms of crosstalk with this method by measuring a californium source, for different neutron energy thresholds. The spectral information recorded by the scintillators can be used to estimate the fractions of neutrons multiple scattering. With the help of a correction to Feynman's point model theory to account for multiple scattering, these fractions can in turn improve the mass reconstruction of fissile materials under investigation.

Nuclear assay of coal. Volume 1. Coal composition by prompt neutron activation analysis: basic experiments. Final report

International Nuclear Information System (INIS)

Reynolds, G.; Bozorganesh, H.; Elias, E.; Gozani, T.; Maung, T.; Orphan, V.

1979-01-01

Using californium-252 as a source of exciting neutrons, prompt gamma photons emitted by elemental nuclei in the coal have been measured using several detectors, including sodium--iodide and germanium--lithium. Several coal types, including bituminous, subbituminous lignite and anthracite were crushed to various top sizes and analyzed carefully be traditional ASTM wet chemistry techniques at two or three different laboratories. The elements (sulfur, hydrogen, carbon, aluminum, silicon, iron, calcium, sodium, nitrogen, and chlorine) were determined by prompt neutron activations and the quantities compared with those of the wet chemical analyses

Actinides

International Nuclear Information System (INIS)

Martinot, L.; Fuger, J.

1985-01-01

The oxidation behavior of the actinides is explained on the basis of their electronic structure. The actinide elements, actinium, thorium, protactinium, uranium, neptunium, plutonium, americium, curium, berkelium, californium, einsteinium, fermium, mendelevium, nobelium, and laurencium are included. For all except the last three elements, the points of discussion are oxidation states, Gibbs energies and potentials, and potential diagram for the element in acid solution; and thermodynamic properties of these same elements are tabulated. References are cited following discussion of each element with a total of 97 references being cited. 13 tables

Low temperature transport in p-doped InAs nanowires

DEFF Research Database (Denmark)

Upadhyay, Shivendra; Jespersen, Thomas Sand; Madsen, Morten Hannibal

2013-01-01

We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature...

Variations in first principles calculated defect energies in GaAs and ...

Indian Academy of Sciences (India)

Keywords. Ab initio calculations; semi-insulating GaAs; point defects. ... We are focusing on gallium arsenide. .... gallium vacancy in S & L, P et al and N & Z will exist in triple ... gallium antisite defect that include relaxation, a negative. U-effect is ...

Mining and Metal Pollution: Assessment of Water Quality in the ...

African Journals Online (AJOL)

Michael

2017-12-02

Dec 2, 2017 ... arsenides and metallic sulphides of As, Au, Cu, Fe,. Zn, Pb and Sb. In gold .... hydroxides of aluminium, iron, manganese and lead. Reactive minerals such ..... seen to form the complex Fe(OH)3, representing 83. % of the total ...

The Effects of Strain on the Electrical Properties of Thin Evaporated Films of Semiconductor Compounds

Science.gov (United States)

Steel, G. G.

1970-01-01

Reports on project intended to establish how electrical resistance, Hall voltage, and magnetoresistance change when a thin film specimen is subjected to mechanical strain. Found resistance of semiconducting film of indium arsenide and indium antimonide decreases with tension and increases with compression. (LS)

Multi-spectral optical absorption in substrate-free nanowire arrays

Energy Technology Data Exchange (ETDEWEB)

Zhang, Junpeng; Chia, Andrew; Boulanger, Jonathan; LaPierre, Ray, E-mail: lapierr@mcmaster.ca [Department of Engineering Physics, McMaster University, 1280 Main St. West, Hamilton, Ontario L8S 4L7 (Canada); Dhindsa, Navneet; Khodadad, Iman; Saini, Simarjeet [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Ave West, Waterloo, Ontario N2L 3G1 (Canada); Waterloo Institute of Nanotechnology, University of Waterloo, 200 University Ave West, Waterloo, Ontario N2L 3G1 (Canada)

2014-09-22

A method is presented of fabricating gallium arsenide (GaAs) nanowire arrays of controlled diameter and period by reactive ion etching of a GaAs substrate containing an indium gallium arsenide (InGaP) etch stop layer, allowing the precise nanowire length to be controlled. The substrate is subsequently removed by selective etching, using the same InGaP etch stop layer, to create a substrate-free GaAs nanowire array. The optical absorptance of the nanowire array was then directly measured without absorption from a substrate. We directly observe absorptance spectra that can be tuned by the nanowire diameter, as explained with rigorous coupled wave analysis. These results illustrate strong optical absorption suitable for nanowire-based solar cells and multi-spectral absorption for wavelength discriminating photodetectors. The solar-weighted absorptance above the bandgap of GaAs was 94% for a nanowire surface coverage of only 15%.

High-performance green flexible electronics based on biodegradable cellulose nanofibril paper.

Science.gov (United States)

Jung, Yei Hwan; Chang, Tzu-Hsuan; Zhang, Huilong; Yao, Chunhua; Zheng, Qifeng; Yang, Vina W; Mi, Hongyi; Kim, Munho; Cho, Sang June; Park, Dong-Wook; Jiang, Hao; Lee, Juhwan; Qiu, Yijie; Zhou, Weidong; Cai, Zhiyong; Gong, Shaoqin; Ma, Zhenqiang

2015-05-26

Today's consumer electronics, such as cell phones, tablets and other portable electronic devices, are typically made of non-renewable, non-biodegradable, and sometimes potentially toxic (for example, gallium arsenide) materials. These consumer electronics are frequently upgraded or discarded, leading to serious environmental contamination. Thus, electronic systems consisting of renewable and biodegradable materials and minimal amount of potentially toxic materials are desirable. Here we report high-performance flexible microwave and digital electronics that consume the smallest amount of potentially toxic materials on biobased, biodegradable and flexible cellulose nanofibril papers. Furthermore, we demonstrate gallium arsenide microwave devices, the consumer wireless workhorse, in a transferrable thin-film form. Successful fabrication of key electrical components on the flexible cellulose nanofibril paper with comparable performance to their rigid counterparts and clear demonstration of fungal biodegradation of the cellulose-nanofibril-based electronics suggest that it is feasible to fabricate high-performance flexible electronics using ecofriendly materials.

The geology of the Collins Bay uranium deposit, Saskatchewan

International Nuclear Information System (INIS)

Jones, B.E.

1980-01-01

The Collins Bay deposit lies within the Churchill Province on the western edge of the Wollaston lithostructural domain where it underlies the eastern edge of the Helikian Athabasca Formation. It is 6 miles north-northeast of the Rabbit Lake mine. Two principal zones of uranium mineralization are described. The A zone, a partly eroded, high-grade pod of metal oxide and arsenides sheathed by clay-like minerals, which trends north-northeast and lies under 25 to 40 feet of water; and the B zone, which lies 6 000 ft south of the A, subcrops under till cover and is a partly eroded zone composed of metal oxide and arsenides which occur within variably altered Athabasca Formation. The deposit is typical of the unconformity-type uranium-nickel deposits of the Athabasca Basin. Observed features fit well with the diagenetic-hydrothermal model for such deposts. (auth)

Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

Science.gov (United States)

Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

1987-01-01

Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

Properties of GaAs:Cr-based Timepix detectors

Science.gov (United States)

Smolyanskiy, P.; Bergmann, B.; Chelkov, G.; Kotov, S.; Kruchonak, U.; Kozhevnikov, D.; Mora Sierra, Y.; Stekl, I.; Zhemchugov, A.

2018-02-01

The hybrid pixel detector technology brought to the X-ray imaging a low noise level at a high spatial resolution, thanks to the single photon counting. However, silicon as the most widespread detector material is marginally sensitive to photons with energies above 30 keV. Therefore, the high-Z alternatives to silicon such as gallium arsenide and cadmium telluride are increasingly attracting attention of the community for the development of X-ray imaging systems. The results of our investigations of the Timepix detectors bump bonded to sensors made of gallium arsenide compensated by chromium (GaAs:Cr) are presented in this work. The following properties are most important from the practical point of view: the IV characteristics, the charge transport characteristics, photon detection efficiency, operational stability, homogeneity, temperature dependence, as well as energy and spatial resolution are considered. The applicability of these detectors for spectroscopic X-ray imaging is discussed.

Medical Applications and Toxicities of Gallium Compounds

Directory of Open Access Journals (Sweden)

Christopher R. Chitambar

2010-05-01

Full Text Available Over the past two to three decades, gallium compounds have gained importance in the fields of medicine and electronics. In clinical medicine, radioactive gallium and stable gallium nitrate are used as diagnostic and therapeutic agents in cancer and disorders of calcium and bone metabolism. In addition, gallium compounds have displayed anti-inflammatory and immunosuppressive activity in animal models of human disease while more recent studies have shown that gallium compounds may function as antimicrobial agents against certain pathogens. In a totally different realm, the chemical properties of gallium arsenide have led to its use in the semiconductor industry. Gallium compounds, whether used medically or in the electronics field, have toxicities. Patients receiving gallium nitrate for the treatment of various diseases may benefit from such therapy, but knowledge of the therapeutic index of this drug is necessary to avoid clinical toxicities. Animals exposed to gallium arsenide display toxicities in certain organ systems suggesting that environmental risks may exist for individuals exposed to this compound in the workplace. Although the arsenic moiety of gallium arsenide appears to be mainly responsible for its pulmonary toxicity, gallium may contribute to some of the detrimental effects in other organs. The use of older and newer gallium compounds in clinical medicine may be advanced by a better understanding of their mechanisms of action, drug resistance, pharmacology, and side-effects. This review will discuss the medical applications of gallium and its mechanisms of action, the newer gallium compounds and future directions for development, and the toxicities of gallium compounds in current use.

Clinical evaluation of dentin hypersensitivity treatment with the low intensity Gallium-Aluminum-Arsenide laser - AsGaAl Avaliação clínica do tratamento da hiperestesia dentinária com laser de baixa potência de Arseniato de Gálio-Alumínio - AsGaAl

Directory of Open Access Journals (Sweden)

Luciana Chucre Gentile

2004-12-01

Full Text Available The dentin hypersensitivity is a painful condition rather prevalent in the general population. There are several ways of treatment for such condition, including the low intensity lasers. The proposal of this study was to verify the effectiveness of the Gallium-Aluminum-Arsenide diode laser in the treatment of this painful condition, using a placebo as control. MATERIALS AND METHODS: Thirty-two patients were selected, 22 females and 10 males, with ages ranging from 20 to 52 years old. The 32 patients were randomly distributed into two groups, treated and control; the sample consisted of 68 teeth, 35 in the treated group and 33 in the control group. The treated group was exposed to six laser applications with intervals from 48 to 72 hours, and the control group received, as placebo, applications of a curing light. RESULTS: A significant reduction was observed in the pain condition between the initial phase and after six laser applications; however, such reduction could also be observed for the control group exposed to the placebo. CONCLUSION: Therapy with the low intensity Gallium-Aluminum-Arsenide laser - AsGaAl induces a statistically significant reduction in the painful condition after each application and between the beginning and end of treatment, although there was no statistically significant difference between the treated group (laser and the control group (placebo at the end of treatment and after the mediate evaluation results (after 6 weeks, this way impairing the real measurement of laser effectiveness and placebo effect.A hiperestesia dentinária trata-se de uma condição dolorosa bastante prevalente nas populações mundiais. Várias são as modalidades de tratamento para tal condição, entre elas, os lasers de baixa potência. A proposta deste estudo foi a de verificar a efetividade do laser de diodo de Arseniato de Gálio-Alumínio no tratamento desta condição dolorosa, utilizando-se um placebo como controle. MATERIAIS E M�

The protective cell petrus for the production of californium 252

International Nuclear Information System (INIS)

Sontag, R.; Berger, R.

1967-01-01

The alpha, beta, gamma, neutron cell which is described in the present paper is devoted to the transplutonium element production and study. It is located at the CEN in Fontenay-aux-Roses (France). The 4 feet ordinary concrete shielding made of stacked blocs allows the manipulation of radioactive sources as high as 1000 curies of 1 MeV gamma rays and with a fast neutrons flux of 10 9 n.cm -2 .s -1 . The airtight alpha containment box is equipped with two transfer systems, one consists of a parallelepiped shaped airtight box located in a turntable, the other uses standard cylindrical containers made of polyethylene. The general equipment and the main setting up are also described. (authors) [fr

500 MHz transient digitizers based on GaAs CCDs

International Nuclear Information System (INIS)

Bryman, D.; Cresswell, J.V.; LeNoble, M.; Poutissou, R.

1990-10-01

A wide bandwidth transient digitizer based on a recently produced gallium arsenide charged coupled device is under development. The CCDs have 128 pixels and operate at 500 MHz. Initial testing of prototype modules in Experiment 787 at Brookhaven National Laboratory is reported. (Author) (8 refs., 10 figs.)

Spin-polarized tunneling with GaAs tips in scanning tunneling microscopy

NARCIS (Netherlands)

Prins, M.W.J.; Jansen, R.; Kempen, van H.

1996-01-01

We describe a model as well as experiments on spin-polarized tunneling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to generate

Spin-dependent transport in metal/semiconductor tunnel junctions

NARCIS (Netherlands)

Prins, M.W.J.; Kempen, van H.; Leuken, Van H.; Groot, de R.A.; Roy, van W.; De Boeck, J.

1995-01-01

This paper describes a model as well as experiments on spin-polarized tunnelling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to

Study and characterization of semi-conductor materials III-V for their applications to the ionizing radiation detection

International Nuclear Information System (INIS)

Moulin, H.

1989-01-01

This work is the study of photoconduction in volume of gallium arsenide and of indium phosphide doped with iron for their applications to X-ray detection which is carried out directly in the material. After having recalled the physical characterization of materials and the principle of photoconduction, we describe two informatic simulations. The first supposes the spatial uniformity of the electric field on the semiconductor, the second takes the spatial and temporal variations of the field into consideration. Then we show the advantage of a first irradiation to neutrons of the photoconductors. With the gallium arsenide there is swiftness improvement of the detectors to the detriment of the sensitivity. The second part studies first the characterizations in the obscurity of the photoconductors according to the electric polarization field and to the neutron dose they received before and then their characterizations under X radiation. 77 refs., 221 figs., 33 tabs., 6 photos., 3 annexes

Tandem for power generation. New sandwich concentrator cell with over 30% efficiency; Im Tandem Strom erzeugen. Neue Mehrschicht-Konzentratorzelle erzielt ueber 30% Wirkungsgrad

Energy Technology Data Exchange (ETDEWEB)

Anon.

2000-11-01

The Fraunhofer-Institut fuer Solare Energiesysteme at Freiburg, Germany, claims a 'best ever' efficiency of a monolithic tandem concentrator solar cell with a sandwich structure based on gallium-indium arsenide and gallium-indium phosphide. The new solar cell can be produced in a single process based on an Aixtron AG (Aachen, Germany) separator which is also used for industrial production of solar cells for aerospace applications. [German] Das Fraunhofer-Institut fuer Solare Energiesysteme in Freiburg hat einen neuen Wirkungsgradrekord fuer monolithische Tandem-Konzentratorsolarzellen gemeldet. Die Wissenschaftler am Fraunhofer-Institut fuer Solare Energiesysteme (Fraunhofer ISE) haben neue Schichtstrukturen auf der Basis von Gallium-Indium-Arsenid und Gallium-Inidum-Phosphid entwickelt. Die neue Solarzelle kann in einem einzigen Prozess hergestellt werden. Fuer diesen Prozess setzen die Freiburger Solarzellenforscher eine Abscheideanlage der Firma Aixtron AG aus Aachen ein, wie sie auch in der Industrie zur Herstellung von Solarzellen fuer Anwendungen im Weltraum genutzt wird. (orig.)

Transformational III-V Electronics

KAUST Repository

Nour, Maha A.

2014-04-01

Flexible electronics using III-V materials for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. This thesis describes a complementary metal oxide semiconductor (CMOS) compatible process for transforming traditional III-V materials based electronics into flexible one. The thesis reports releasing 200 nm of Gallium Arsenide (GaAs) from 200 nm GaAs / 300 nm Aluminum Arsenide (AlAs) stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes that contributes to the better transparency (45 % at 724 nm wavelengths) observed. Fabrication of metal oxide semiconductor capacitor (MOSCAPs) on GaAs is followed by releasing it to have devices on flexible 200 nm GaAs. Similarly, flexible GaSb and InP fabrication process is also reported to transform traditional electronics into large-area flexible electronics.

Heat load of a P-doped GaAs photocathode in SRF electron gun

International Nuclear Information System (INIS)

Wang, E.; Ben-Zvi, I.; Kewisch, J.; Burrill, A.; Rao, T.; Wu, Q.; Jain, A.; Gupta, R.; Holmes, D.

2010-01-01

Many efforts were made over the last decades to develop a better polarized electron source for the high energy physics. Several laboratories operate DC guns with the Gallium-Arsenide photo-cathode, which yield a highly polarized electron beam. However, the beam's emittance might well be improved using a Superconducting RF electron gun, which delivers beams of higher brightness than DC guns does, because the field gradient at the cathode is higher. SRF guns with metal cathodes and CsTe cathodes have been tested successfully. To produce polarized electrons, a Gallium-Arsenide photo-cathode must be used: an experiment to do so in a superconducting RF gun is under way at BNL. Since the cathode will be normal conducting, the problem about the heat load stemming from the cathode arises. We present our measurements of the electrical resistance of GaAs at cryogenic temperatures, a prediction of the heat load and the verification by measuring the quality factor of the gun with and without cathode.

MOCVD process technology for affordable, high-yield, high-performance MESFET structures. Phase 3: MIMIC

Science.gov (United States)

1993-01-01

Under the MIMIC Program, Spire has pursued improvements in the manufacturing of low cost, high quality gallium arsenide MOCVD wafers for advanced MIMIC FET applications. As a demonstration of such improvements, Spire was tasked to supply MOCVD wafers for comparison to MBE wafers in the fabrication of millimeter and microwave integrated circuits. In this, the final technical report for Spire's two-year MIMIC contract, we report the results of our work. The main objectives of Spire's MIMIC Phase 3 Program, as outlined in the Statement of Work, were as follows: Optimize the MOCVD growth conditions for the best possible electrical and morphological gallium arsenide. Optimization should include substrate and source qualification as well as determination of the optimum reactor growth conditions; Perform all work on 75 millimeter diameter wafers, using a reactor capable of at least three wafers per run; and Evaluate epitaxial layers using electrical, optical, and morphological tests to obtain thickness, carrier concentration, and mobility data across wafers.

Diffusion in Intrinsic and Highly Doped III-V Semiconductors

CERN Multimedia

Stolwijk, N

2002-01-01

%title\\\\ \\\\Diffusion plays a key role in the fabrication of semiconductor devices. The diffusion of atoms in crystals is mediated by intrinsic point defects. Investigations of the diffusion behaviour of self- and solute atoms on the Ga sublattice of gallium arsenide led to the conclusion that in intrinsic and n-type material charged Ga vacancies are involved in diffusion processes whereas in p-type material diffusion if governed by charged Ga self-interstitials. Concerning the As sublattice of gallium arsenide there is a severe lack of reliable diffusion data. The few available literature data on intrinsic GaAs are not mutually consistent. A systematic study of the doping dependence of diffusion is completely missing. The most basic diffusion process - self-diffusion of As and its temperature and doping dependence - is practically not known. For GaP a similar statement holds.\\\\ \\\\The aim of the present project is to perform a systematic diffusion study of As diffusion in intrinsic and doped GaAs and in GaP. P...

Fast Clock Recovery for Digital Communications

Science.gov (United States)

Tell, R. G.

1985-01-01

Circuit extracts clock signal from random non-return-to-zero data stream, locking onto clock within one bit period at 1-gigabitper-second data rate. Circuit used for synchronization in opticalfiber communications. Derives speed from very short response time of gallium arsenide metal/semiconductor field-effect transistors (MESFET's).

Radiation protection data sheet. Radiation protection data sheets for the use of radionuclides in unsealed sources

International Nuclear Information System (INIS)

Anon.

1999-01-01

These radiation protection data sheet are devoted to responsible persons and employees of various laboratories or medical, pharmaceutical, university and industrial departments where radionuclides are handled as well as all the persons who attend to satisfy in this field. They contain the essential radiation protection data for the use of unsealed sources: physical characteristics, risk assessment, administrative procedures, recommendations, regulations and bibliography. This new series includes the following radionuclides: californium 252, curium 244, gallium 67, indium 113m, plutonium 238, plutonium 239, polonium 210, potassium 42, radium 226, thorium 232, uranium 238 and zinc 65. (O.M.)

Determination of the relative power density distribution in a heterogeneous reactor from the results of measurements of the reactivity effects and the neutron importance function

International Nuclear Information System (INIS)

Bobrov, A. A.; Glushkov, E. S.; Zimin, A. A.; Kapitonova, A. V.; Kompaniets, G. V.; Nosov, V. I.; Petrushenko, R. P.; Smirnov, O. N.

2012-01-01

A method for experimental determination of the relative power density distribution in a heterogeneous reactor based on measurements of fuel reactivity effects and importance of neutrons from a californium source is proposed. The method was perfected on two critical assembly configurations at the NARCISS facility of the Kurchatov Institute, which simulated a small-size heterogeneous nuclear reactor. The neutron importance measurements were performed on subcritical and critical assemblies. It is shown that, along with traditionally used activation methods, the developed method can be applied to experimental studies of special features of the power density distribution in critical assemblies and reactors.

Fundamental investigation of high temperature operation of field effect transistor devices

Science.gov (United States)

Chern, Jehn-Huar

In this dissertation copper germanium (CuGe)-based materials were investigated as potential ohmic contacts to n-type gallium arsenide (GaAs). The CuGe-based contacts to GaAs were found to not form any reaction products with GaAs and to have low contact resistance comparable to that of nickel gold germanium (NiAuGe) ohmic contacts to GaAs. The potential for high temperature applications using CuGe ohmic contacts was investigated. A guideline for further reduction of the contact resistance has been achieved after investigating the detailed mechanism of the formation of binary CuGe contacts over a wide range of Ge concentrations. The thermal stability of CuGe contacts was significantly enhanced and improved by introducing a diffusion barrier, titanium tungsten nitride (TiWNx), and a gold (Au) overlayer for high temperature applications. Novel approaches such as epitaxial thulium phosphide (TmP) Schottky contacts and the utilization of low temperature (LT)-aluminum gallium arsenide (AlGaAs) were also investigated in this dissertation and likely will be the standard technologies for a new generation of high-temperature electronics. Inserting a layer of aluminum arsenide (AlAs) underneath the channel of a GaAs-based MESFET was found to reduce substrate leakage currents by a factor of 30 compared with the same MESFET directly fabricated on a semi-insulating GaAs substrate. In addition to AlAs, and AlxGa1-xAs materials, new materials grown at low temperatures such as LT-AlGaAs were used in heterojunction FET structures as a back wall barrier. Low drain leakage currents were achieved using AlAs and LT-AlGaAs as the back wall barriers. Some fundamental properties regarding these materials are of great interest and in need of further characterization. Part of the work in this dissertation was devoted to the characterization of device performance for different structure designs at elevated temperatures. The suitability of GaAs-based and gallium arsenide (GaN)-based MESFET

An in-vacuum diffractometer for resonant elastic soft x-ray scattering

Czech Academy of Sciences Publication Activity Database

Hawthorn, D.G.; He, F.; Venema, L.; Davis, H.; Achkar, A.J.; Zhang, J.; Sutarto, R.; Wadati, H.; Radi, A.; Wilson, T.; Wright, G.; Shen, K.M.; Geck, J.; Zhang, H.; Novák, Vít; Sawatzky, G.A.

2011-01-01

Roč. 82, č. 7 (2011), 073104/1-073104/8 ISSN 0034-6748 Institutional research plan: CEZ:AV0Z10100521 Keywords : gallium arsenide * lanthanum compounds * manganese compounds * neodymium * reflectivity * semiconductor thin films * strontium compounds * X-ray diffraction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.367, year: 2011

High-performance green flexible electronics based on biodegradable cellulose nanofibril paper

Science.gov (United States)

Yei Hwan Jung; Tzu-Hsuan Chang; Huilong Zhang; Chunhua Yao; Qifeng Zheng; Vina W. Yang; Hongyi Mi; Munho Kim; Sang June Cho; Dong-Wook Park; Hao Jiang; Juhwan Lee; Yijie Qiu; Weidong Zhou; Zhiyong Cai; Shaoqin Gong; Zhenqiang Ma

2015-01-01

Today’s consumer electronics, such as cell phones, tablets and other portable electronic devices, are typically made of non-renewable, non-biodegradable, and sometimes potentially toxic (for example, gallium arsenide) materials. These consumer electronics are frequently upgraded or discarded, leading to serious environmental contamination. Thus, electronic systems...

Gallium arsenide detectors for minimum ionizing particles

International Nuclear Information System (INIS)

Beaumont, S.B.; Bertin, R.; Booth, C.N.; Buttar, C.; Capiluppi, C.; Carraresi, L.; Cindolo, F.; Colocci, M.; Combley, F.H.; D'Auria, S.; Del Papa, C.; Dogru, M.; Edwards, M.; Fiori, F.; Foster, F.; Francescato, A.; Gray, R.; Hill, G.; Hou, Y.; Houston, P.; Hughes, G.; Jones, B.K.; Lynch, J.G.; Lisowsky, B.; Matheson, J.; Nava, F.; Nuti, M.; O'Shea, V.; Pelfer, P.G.; Raine, C.; Santana, J.; Saunders, I.J.; Seller, P.H.; Shankar, K.; Sharp, P.H.; Skillicorn, I.O.; Sloan, T.; Smith, K.M.; Tartoni, N.; Ten Have, I.; Turnbull, R.M.; Vanni, U.; Vinattieri, A.; Zichichi, A.

1993-01-01

Progress on the development of GaAs solid state detectors is presented. 80% charge collection efficiency has been achieved, and double sided detectors with metal rectifying contacts have been tested. Measurements of capacitance and tests with SEM are giving more information on the behaviour of these devices. (orig.)

Development of gallium arsenide gamma spectrometric detector

International Nuclear Information System (INIS)

Kobayashi, T.; Kuru, I.

1975-03-01

GaAs semiconductor material has been considered to be a suitable material for gamma-ray spectrometer operating at room temperature since it has a wid-band gap, larger than that of silicon and germanium. The basic objective of this work is to develop a GaAs gamma-ray spectrometric detector which could be used for gamma spectrometric measurement of uranium and plutonium in nuclear fuel safeguards. Liquid phase epitaxial techniques using iron (Fe) as dopant have been developed in making high purity GaAs crystals suitable for gamma-ray spectrometer operating at room temperature. Concentration of Fe in the epitaxial crystal was controlled by initial growth temperature. The best quality epitaxial crystal was obtained under the following conditions: starting temperature is about 800degC, the proportion of Fe to Ga solvent is 1 to 300. Carrier concentration of epitaxial crystals grown distributed in the ranges of 10 12 cm -3 to 10 14 cm -3 at room temperature. The thickness of the crystals ranged from 38 μm to 120 μm. Au-GaAs surface barrier detector was made of epitaxial crystal. Some of the detector were encapsulated in a can with a 50 μm Be window by welding a can to the detector holder. The detector with high energy resolution and good charge collecting characteristics was selected by alpha spectrometry at room temperature. Energy resolution of the detector for gamma-rays up to about 200 keV was very good at room temperature operation. The best energy resolutions taken with a GaAs detector were 3 keV (fwhm) and 3.8 keV for 241 Am 59.6 keV and 57 Co 122 keV, respectively, at room temperature. In order to study the applicability of the detector for nuclear safeguards, the measurements of 235 U gamma-ray spectrum have been carried out at room temperature. It was clarified that the gamma-ray spectrum of enriched U sample could be measured in high resolution with GaAs detector at room temperature, and that the content of 235 U in enriched U sources could be determined by measuring gamma-ray spectrum with GaAs detector. However, gamma-ray counting efficiency of the detector was not enough to built portable type instrument of gamma-ray spectrometer used for routine works of nuclear safeguards. In order to improve gamma-ray counting efficiency of the detector, double-epitaxial-layer detector has been studied. The preliminary results showed that the improvement of the detector gamma-ray counting efficiency was possible by using double-epitaxial-layer structure. It was also clarified that the good quality GaAs crystal was a key to obtaining a low noise, good charge collection detector

DX centers in indium aluminum arsenide heterostructures

Science.gov (United States)

Sari, Huseyin

DX centers are point defects observed in many n-type doped III-V compound semi conductors. They have unique properties, which include large differences between their optical and thermal ionization energies, and a temperature dependence of the capture cross-sections. As a result of these properties DX centers exhibit a reduction in free carrier concentration and a large persistent photoconductivity (PPC) effect. DX centers also lead to a shift in the threshold voltage of modulation doped field effect transistors (MODFET) structures, at low temperatures. Most of the studies on this defect have been carried out on the Ga xAl1-xAs material system. However, to date there is significantly less work on DX centers in InxAl1-xAs compounds. This is partly due to difficulties associated with the growth of defect free materials other than lattice matched In0.52Al 0.48As on InP and partly because the energy level of the DX center is in resonance with the conduction band in In0.52Al0.48As. The purpose of this dissertation is to extend the DX center investigation to InAlAs compounds, primarily in the indirect portion of the InAlAs bandgap. In this work the indium composition dependence of the DX centers in In xAl1-xAs/InyGa1-yAs-based heterostructure is studied experimentally. Different InxAl 1-xAs epitaxial layers with x = 0.10, x = 0.15, x = 0.20, and x = 0.34 in a MODFET-like heterostructure were grown by Molecular Beam Epitaxy (MBE) on (001) GaAs substrates. In order to compensate the lattice mismatch between epitaxial layers and their substrates, step-graded buffer layers with indium composition increments of x = 0.10, every 2000 A, were used. For the samples grown with different indium contents Hall measurements as a function of both temperature and different cooling biases were performed in order to determine their carrier concentrations. A self consistent Poisson-Schrodinger numerical software is used to model the heterostructures. With the help of this numerical model and the grand canonical ensemble (GCE) the energy levels of the DX centers relative to the conduction band edge were estimated. The optical properties of the DX centers were also investigated using a 1.0 mum thick, Si-doped bulk-like GaAlAs epitaxial layer grown by MBE on a GaAs substrate. A conductivity modulation experiment using a stripe-patterned mask has been performed at 77°K. A conductivity difference, up to 10 4 along parallel and perpendicular directions relative to the stripes, has been measured. The difference in conductivity is a result of the large PPC effect of the DX centers and clearly indicates the localized nature of these deep levels.

Selenium implantation in epitaxial gallium arsenide layers

International Nuclear Information System (INIS)

Inada, T.; Tokunaga, K.; Taka, S.; Yuge, Y.; Kohzu, H.

1981-01-01

Selenium implantation at room temperature in S-doped epitaxial GaAs layers as a means of the formation of n + layers has been investigated. Doping profiles for Se-implanted layers have been examined by a C-V technique and/or a differential Hall effect method. It has been shown that n + layers with a maximum carrier concentration of approx. equal to1.5 x 10 18 cm -3 can be formed by implantation followed by a 15 min annealing at 950 0 C. Contact resistance of ohmic electrodes is reduced by use of the Se-implanted n + layers, resulting in the improvement on GaAs FET performance. Measured minimum noise figure of the Se-implanted GaAs FETs is 0.74 dB at 4 GHz. (orig.)

The 20 and 30 GHz MMIC technology for future space communication antenna system

Science.gov (United States)

Anzic, G.; Connolly, D. J.

1984-10-01

The development of fully monolithic gallium arsenide receive and transmit modules is described. These modules are slated for phased array antenna applications in future 30/20 gigahertz communications satellite systems. Performance goals and various approaches to achieve them are discussed. The latest design and performance results of components, submodules and modules are presented.

The Incorporation of Lithium Alloying Metals into Carbon Matrices for Lithium Ion Battery Anodes

Science.gov (United States)

Hays, Kevin A.

An increased interest in renewable energies and alternative fuels has led to recognition of the necessity of wide scale adoption of the electric vehicle. Automotive manufacturers have striven to produce an electric vehicle that can match the range of their petroleum-fueled counterparts. However, the state-of-the-art lithium ion batteries used to power the current offerings still do not come close to the necessary energy density. The energy and power densities of the lithium ion batteries must be increased significantly if they are going to make electric vehicles a viable option. The chemistry of the lithium ion battery, based on lithium cobalt oxide cathodes and graphite anodes, is limited by the amount of lithium the cathode can provide and the anode will accept. While these materials have proven themselves in portable electronics over the past two decades, plausible higher energy alternatives do exist. The focus is of this study is on anode materials that could achieve a capacity of more than 3 times greater than that of graphite anodes. The lithium alloying anode materials investigated and reported herein include tin, arsenic, and gallium arsenide. These metals were synthesized with nanoscale dimensions, improving their electrochemical and mechanical properties. Each exhibits their own benefits and challenges, but all display opportunities for incorporation in lithium ion batteries. Tin is incorporated in multilayer graphene nanoshells by introducing small amounts of metal in the core and, separately, on the outside of these spheres. Electrolyte decomposition on the anode limits cycle life of the tin cores, however, tin vii oxides introduced outside of the multilayer graphene nanoshells have greatly improved long term battery performance. Arsenic is a lithium alloying metal that has largely been ignored by the research community to date. One of the first long term battery performance tests of arsenic is reported in this thesis. Anodes were made from nanoscale

Implications of the Differential Toxicological Effects of III-V Ionic and Particulate Materials for Hazard Assessment of Semiconductor Slurries.

Science.gov (United States)

Jiang, Wen; Lin, Sijie; Chang, Chong Hyun; Ji, Zhaoxia; Sun, Bingbing; Wang, Xiang; Li, Ruibin; Pon, Nanetta; Xia, Tian; Nel, André E

2015-12-22

Because of tunable band gaps, high carrier mobility, and low-energy consumption rates, III-V materials are attractive for use in semiconductor wafers. However, these wafers require chemical mechanical planarization (CMP) for polishing, which leads to the generation of large quantities of hazardous waste including particulate and ionic III-V debris. Although the toxic effects of micron-sized III-V materials have been studied in vivo, no comprehensive assessment has been undertaken to elucidate the hazardous effects of submicron particulates and released III-V ionic components. Since III-V materials may contribute disproportionately to the hazard of CMP slurries, we obtained GaP, InP, GaAs, and InAs as micron- (0.2-3 μm) and nanoscale (particles for comparative studies of their cytotoxic potential in macrophage (THP-1) and lung epithelial (BEAS-2B) cell lines. We found that nanosized III-V arsenides, including GaAs and InAs, could induce significantly more cytotoxicity over a 24-72 h observation period. In contrast, GaP and InP particulates of all sizes as well as ionic GaCl3 and InCl3 were substantially less hazardous. The principal mechanism of III-V arsenide nanoparticle toxicity is dissolution and shedding of toxic As(III) and, to a lesser extent, As(V) ions. GaAs dissolves in the cell culture medium as well as in acidifying intracellular compartments, while InAs dissolves (more slowly) inside cells. Chelation of released As by 2,3-dimercapto-1-propanesulfonic acid interfered in GaAs toxicity. Collectively, these results demonstrate that III-V arsenides, GaAs and InAs nanoparticles, contribute in a major way to the toxicity of III-V materials that could appear in slurries. This finding is of importance for considering how to deal with the hazard potential of CMP slurries.

Nonlinear THz spectroscopy on n-type GaAs

Energy Technology Data Exchange (ETDEWEB)

Gaal, Peter

2008-06-23

In this thesis, the ultrafast dynamics of conduction band electrons in semiconductors are investigated by nonlinear terahertz (THz) spectroscopy. In particular, n-doped gallium arsenide samples with doping concentrations in the range of 10{sup 16} cm{sup -3} to 10{sup 17} cm{sup -3} are studied. A novel source for the generation of intense THz radiation is developed which yields single-cycle THz transients with field amplitudes of more then 400 kV/cm. The THz source uses ultrashort optical laser pulses provided by a Ti:sapphire oscillator. In addition, a two-color THz-pump mid-infrared-probe setup is implemented, which allows for two-dimensional time-resolved experiments in the far-infrared wavelength range. Field ionization of neutral shallow donors in gallium arsenide with intense, ultrashort THz pulses and subsequent coherent radiative recombination of electrons to impurity ground states is observed at room temperature. The superradiant decay of the nonlinear polarization results in the emission of a coherent signal with picosecond lifetimes. Such nonlinear signals, which exhibit a lifetime ten times longer than in the linear regime are observed for the first time. At low temperatures and THz field strengths below 5 kV/cm, Rabi flopping on shallow donor transitions is demonstrated. For the first time, the polar electron-LO phonon interaction is directly measured in the quantum kinetic transport regime. Quasi-instantaneous acceleration of conduction band electrons in the polar gallium arsenide lattice by the electric field of intense THz pulses and subsequent probing of the mid-infrared transmission reveals a modulation of the transmission along the THz-mid-infrared delay coordinate with the frequency of the LO phonon. These modulations directly display the relative phase between the electron motion and its surrounding virtual phonon cloud. Quantum kinetic model calculations fully account for the observed phenomena. (orig.)

Comparison of charge collection in semiconductor detectors and timing resolution, using a sub-nanosecond transimpedance amplifier

International Nuclear Information System (INIS)

Rudge, A.

1995-01-01

A transimpedance amplifier, with a risetime of <600 ps and a noise of <1000 RMS electrons in a 500 MHz bandwidth, has been used for comparison of charge collection times in silicon, gallium arsenide and diamond detectors. The use of silicon detectors as trigger counters/hodoscopes is demonstrated, together with measured timing characteristics. (orig.)

Comparison of charge collection in semiconductor detectors and timing resolution, using a sub-nanosecond transimpedance amplifier

Energy Technology Data Exchange (ETDEWEB)

Rudge, A. [European Organization for Nuclear Research, Geneva (Switzerland)

1995-06-01

A transimpedance amplifier, with a risetime of <600 ps and a noise of <1000 RMS electrons in a 500 MHz bandwidth, has been used for comparison of charge collection times in silicon, gallium arsenide and diamond detectors. The use of silicon detectors as trigger counters/hodoscopes is demonstrated, together with measured timing characteristics. (orig.).

Tunable structures and modulators for THz light

Czech Academy of Sciences Publication Activity Database

Kužel, Petr; Kadlec, Filip

2008-01-01

Roč. 9, - (2008), 197-214 ISSN 1631-0705 R&D Projects: GA AV ČR KJB100100512; GA MŠk LC512 Institutional research plan: CEZ:AV0Z10100520 Keywords : terahertz radiation * tunable devices * photonic crystals * strontium titanate * gallium arsenide Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.164, year: 2008

Spectrum-averaged cross-section measurement of /sup 103/Rh(n,n)/sup 103m/Rh in the /sup 252/Cf fission neutron spectrum

International Nuclear Information System (INIS)

Lamaze, G.P.; Schima, F.J.; Eisenhauer, C.M.; Spiegel, V.

1988-01-01

Because of the similarity in energy dependence of the /sup 103/Rh(n,n') differential cross section to the kerma muscle response function for neutrons, rhodium may be useful as a neutron kerma monitor. In support of its use as a neutron monitor, the spectrum-averaged cross section σ-bar has been measured for a /sup 252/Cf fission neutron spectrum. Pairs of thin rhodium samples were irradiated on opposite sides of a thinly encapsulated /sup 252/Cf neutron source. The neutron emission rate of the /sup 252/Cf source was determined by the manganous sulfate (MnSO/sub 4/) bath technique. In this method, the californium source emission rate is determined by comparison to the known emission rate of NBS-I, a standard radium-beryllium neutron source. The neutron fluence incident on the rhodium samples is determined from the californium source strength, average sample-to-source distance, and the duration of the irradiation. Corrections are made for neutron scattering saturation of activity, and attenuation of the X rays by the sample during counting. The X rays were detected with an intrinsic germanium detector designed specifically for low-energy X-ray detection. The activity was not determined by absolute counting so that the final results depend on the value of P/sub Κx/, to total Κ X-ray emission probability. The results of five separate irradiations yield a value of σ-bar . P/sub Κx/ = 62.3 +- 1.9 mb. Using the most recently published value of P/sub Κx/ gives a value of σ-bar = 739 +- 22 mb. A discussion of systematic uncertainties is given

Use of californium-252 sources in Hungary for teaching and research

International Nuclear Information System (INIS)

Csikai, J.

1976-01-01

An activation facility was designed to accommodate up to 50 mg of 252 Cf; it contains at present a 500 μg source. The absolute values of thermal, epithermal and fast neutron fluxes were determined by the foil activation method using In, Dy, Au, Al and Fe detectors. Cross-sections averaged for unmoderated 252 Cf neutrons were determined for 22 different reactions for elements with atomic weights lying between A=27 and 204. The sensitivity for determination of Al, Ti, Cu, As, Sr, Mo, In, Cd, Ba, Au, Hg and Pb was calculated for NaI(Tl) and Ge(Li) detectors. Average (n,2n) cross-sections for 252 Cf spectrum were calculated for 49 nuclei lying between A=14 and 204. Angular distributions and cross-sections for the fragments from 252 Cf neutron-induced fission of 232 Th and 238 U were measured. Titanium in bauxite and manganese in aluminium alloys were determined with a 252 Cf source. The applicability of solid-state track detectors for neutron dosimetry, radiography and for the determination of fuel burn-up were investigated using 252 Cf neutron and fragment sources. Characteristics of a jumping spark counter for counting fission fragments were studied with 252 Cf sources. (author)

Review of microscopic integral cross section data in fundamental reactor dosimetry benchmark neutron fields

International Nuclear Information System (INIS)

Fabry, A.; McElroy, W.N.; Kellogg, L.S.; Lippincott, E.P.; Grundl, J.A.; Gilliam, D.M.; Hansen, G.E.

1976-01-01

This paper is intended to review and critically discuss microscopic integral cross section measurement and calculation data for fundamental reactor dosimetry benchmark neutron fields. Specifically the review covers the following fundamental benchmarks: the spontaneous californium-252 fission neutron spectrum standard field; the thermal-neutron induced uranium-235 fission neutron spectrum standard field; the (secondary) intermediate-energy standard neutron field at the center of the Mol-ΣΣ, NISUS, and ITN-ΣΣ facilities; the reference neutron field at the center of the Coupled Fast Reactor Measurement Facility; the reference neutron field at the center of the 10% enriched uranium metal, cylindrical, fast critical; the (primary) Intermediate-Energy Standard Neutron Field

Development of a transportable neutron radiography system for non-destructive tests application

International Nuclear Information System (INIS)

Silva, Ademir X. da; Crispim, Verginia R.

1999-01-01

This paper presents a study of a transportable neutron radiography system utilizing californium-252. Studies about moderation, collimation and shielding are showed. A Monte Carlo Code, MCNP3b, has been used to obtain a maximum and more homogeneous thermal neutron flux in the collimator outlet next to the image plain, and an adequate radiation shielding to attend radiological protection rules. With the presented collimator, it was possible to obtain for the thermal neutron flux, at the collimator outlet and next to the image plain, a L/D ratio 7,5, for neutron flux up to 6 X 10 -6 cm -2 .s -1 per neutron source. (author)

Neutron crosstalk between liquid scintillators

Energy Technology Data Exchange (ETDEWEB)

Verbeke, J.M., E-mail: verbeke2@llnl.gov; Prasad, M.K., E-mail: prasad1@llnl.gov; Snyderman, N.J., E-mail: snyderman1@llnl.gov

2015-09-11

A method is proposed to quantify the fractions of neutrons scattering between liquid scintillators. Using a spontaneous fission source, this method can be utilized to quickly characterize an array of liquid scintillators in terms of crosstalk. The point model theory due to Feynman is corrected to account for these multiple scatterings. Using spectral information measured by the liquid scintillators, fractions of multiple scattering can be estimated, and mass reconstruction of fissile materials under investigation can be improved. Monte Carlo simulations of mono-energetic neutron sources were performed to estimate neutron crosstalk. A californium source in an array of liquid scintillators was modeled to illustrate the improvement of the mass reconstruction.

Neutron crosstalk between liquid scintillators

International Nuclear Information System (INIS)

Verbeke, J.M.; Prasad, M.K.; Snyderman, N.J.

2015-01-01

A method is proposed to quantify the fractions of neutrons scattering between liquid scintillators. Using a spontaneous fission source, this method can be utilized to quickly characterize an array of liquid scintillators in terms of crosstalk. The point model theory due to Feynman is corrected to account for these multiple scatterings. Using spectral information measured by the liquid scintillators, fractions of multiple scattering can be estimated, and mass reconstruction of fissile materials under investigation can be improved. Monte Carlo simulations of mono-energetic neutron sources were performed to estimate neutron crosstalk. A californium source in an array of liquid scintillators was modeled to illustrate the improvement of the mass reconstruction

Radiological safety considerations in the design and operation of the ORNL Transuranium Research Laboratory (TRL)

International Nuclear Information System (INIS)

Haynes, C.E.

1976-01-01

The Transuranium Research Laboratory (TRL) is the central facility at Oak Ridge National Laboratory (ORNL) for chemical and physical research involving transuranium elements. Transuranium Research Laboratory investigations are about equally divided between studies of inorganic and structural chemistry of the heavy elements and nuclear structure and properties of their isotopes. Elements studied include neptunium, plutonium, americium, curium, berkelium, californium, and einsteinium, each in microgram-to-gram quantities depending upon availability and experimental requirements. This paper describes an eight-step safety procedure followed in planning and approving individual research projects. This procedure should provide an optimum margin of safety and should permit the accomplishment of successful research

Determination of alpha activity and fissile mass content in solid waste by systems using neutron interrogation

International Nuclear Information System (INIS)

Romeyer Dherbey, J.; Lacruche, G.; Berne, R.; Auge, J.; Martin Deidier, L.; Butez, M.

1990-01-01

The Quantitative control (determination of heavy nuclides and alpha activity) of alpha radioactive wastes is necessary, particularly to determine if the waste is in accordance with the surface storage limits. In order to reduce the uncertainty on the alpha activity resulting from unknown isotopic composition, inhomogeneity of heavy nuclides in the matrix, combination of several methods is necessary. In the paper we present the Cadarache development work in the NDA of solid waste using the Californium shuffler, 14 Mev neutron generator, and also passive techniques such as neutron emission measurement and gamma spectrometry. Experimental systems combining active and passive methods are presented (COSAC, BANCO, DANAIDE, PROMETHEE)

Beam test of a grid-less multi-harmonic buncher

International Nuclear Information System (INIS)

Ostroumov, P.N.; Aseev, V.N.; Barcikowski, A.; Clifft, B.; Pardo, R.; Sharamentov, S.I.; Sengupta, M.

2008-01-01

The Argonne Tandem Linear Accelerator System (ATLAS) is the first superconducting heavy-ion linac in the world. Currently ATLAS is being upgraded with the Californium Rare Ion Breeder Upgrade (CARIBU). The latter is a funded project to expand the range of shortlived, neutron-rich rare isotope beams available for nuclear physics research at ATLAS. To avoid beam losses associated with the existing gridded multi-harmonic buncher (MHB), we have developed and built a grid-less four-harmonic buncher with fundamental frequency of 12.125 MHz. In this paper, we report the results of the MHB commissioning and ATLAS beam performance with the new buncher.

Composition containing transuranic elements for use in the homeopathic treatment of aids

International Nuclear Information System (INIS)

Lustig, D.

1996-01-01

A homeopathic remedy consisting of a composition containing one or more transuranic elements, particularly plutonium, for preventing and treating acquired immunodeficiency syndrome (AIDS) in humans, as well as seropositivity for human immunodeficiency virus (HIV). Said composition is characterized in that it uses any chemical or isotopic form of one or more transuranic elements (neptunium, plutonium, americium, curium, berkelium, californium or einsteinium), particularly plutonium, said form being diluted and dynamized according to conventional homeopathic methods, particularly the so-called Hahnemann and Korsakov methods, and provided preferably but not exclusively in the form of lactose and/or saccharose globules or granules impregnated with the active principle of said composition. (author)

PROCEEDINGS OF THE SYMPOSIUM COMMEMORATING THE 25th ANNIVERSARY OF ELEMENTS 97 and 98 HELD ON JAN. 20, 1975

Energy Technology Data Exchange (ETDEWEB)

Seaborg, Glenn T.; Street Jr., Kenneth; Thompson, Stanley G.; Ghiorso, Albert

1976-07-01

This volume includes the talks given on January 20, 1975, at a symposium in Berkeley on the occasion of the celebration of the 25th anniversary of the discovery of berkelium and californium. Talks were given at this symposium by the four people involved in the discovery of these elements and by a number of people who have made significant contributions in the intervening years to the investigation of their nuclear and chemical properties. The papers are being published here, without editing, in the form in which they were submitted by the authors in the months following the anniversary symposium, and they reflect rather faithfully the remarks made on that occasion.

TOWARD AN IMPROVED UNDERSTANDING OF STRUCTURE AND MAGNETISM IN NEPTUNIUM AND PLUTONIUM PHOSPHONATES AND SULFONATES

Energy Technology Data Exchange (ETDEWEB)

Albrecht-Schmitt, Thomas

2012-03-01

This grant supported the exploratory synthesis of new actinide materials with all of the actinides from thorium to californium with the exceptions of protactinium and berkelium. We developed detailed structure-property relationships that allowed for the identification of novel materials with selective ion-exchange, selective oxidation, and long-range magnetic ordering. We found novel bonding motifs and identified periodic trends across the actinide series. We identified structural building units that would lead to desired structural features and novel topologies. We also characterized many different spectroscopic trends across the actinide series. The grant support the preparation of approximately 1200 new compounds all of which were structurally characterized.

Triton and alpha-particle contribution from LiF converter for neutron dosimeter

CERN Document Server

Camacho, M E; Balcazar, M

1999-01-01

A personnel neutron dosimeter prototype based on chemical and electrochemical etched CR-39 detector, combined with LiF converter, has been calibrated using an ICRP-like phantom, under a heavy-water moderated Californium source neutron spectra; A conversion factor of 1.052+-126 spots cm sup - sup 2 mSv sup - sup 1 was obtained. The sealing properties of the detector holder showed a ten-fold reduction in radon background when it was tested in a high radon atmosphere. A convenient mechanical shock resistance was achieved in LiF converters by sintering to 11 tons pressure LiF powder at 650 deg. C, during one hour.

Unconstrained Heterogeneous Colloidal Quantum Dots Embedded in GaAs/GaSb Nanovoids

Science.gov (United States)

2014-04-17

hexadecylamine ( HDA ), and 5 mL of TOP were added to a three-neck flask, which was then degassed in a vacuum and heated to 130 C for 1.5 hours. Next...arsenide GaSb – gallium antimonide HDA – hexadecylamine HDD – hexadecanediol HR-SEM – high-resolution scanning electron microscope HR-TEM – high

InP solar cell with window layer

Science.gov (United States)

Jain, Raj K. (Inventor); Landis, Geoffrey A. (Inventor)

1994-01-01

The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

Short period strain balanced gallium arsenide nitride/indium arsenide nitride superlattice lattice matched to indium phosphide for mid-infrared photovoltaics

Science.gov (United States)

Bhusal, Lekhnath

Dilute nitrogen-containing III-V-N alloys have been intensively studied for their unusual electronic and optical behavior in the presence of a small amount of nitrogen. Those behaviors can further be manipulated, with a careful consideration of the strain and strain balancing, for example, in the context of a strain-balanced superlattice (SL) based on those alloys. In this work, the k.p approximation and the band anti-crossing model modified for the strain have been used to describe the electronic states of the strained bulk-like GaAs1-xNx and InAs 1-yNy ternaries in the vicinity of the center of the Brillouin zone (Gamma-point). Band-offsets between the conduction and valence bands of GaAs1-xNx and InAs1-yN y have also been evaluated, before implementing them into the SL structure. By minimizing the total mechanical energy of the stack of the alternating layers of GaAs1-xNx and InAs1-yNy in the SL, the ratio of the thicknesses of the epilayers is determined to make the structure lattice-matching on the InP(001), through the strain-balancing. Mini-band energies of the strain-balanced GaAs1-xNx/InAs 1-yNy short-period SL on InP(001) is then investigated using the transfer matrix formalism. This enabled identifying the evolution of the band edge transition energies of the superlattice structure for different nitrogen compositions. Results show the potential of the new proposed design to exceed the existing limits of bulk-like InGaAsN alloys and offer the applications for photon absorption/emission energies in the range of ~0.65-0.35eV at 300K for a typical nitrogen composition of ≤5%. The optical absorption coefficient of such a SL is then estimated under the anisotropic medium approximation, where the optical absorption of the bulk structure is modified according to the anisotropy imposed by the periodic potential in the growth direction. As an application, the developed SL structure is used to investigate the performance of double, triple and quadruple junction thermophotovoltaic devices. Integration of the SL structure, which is lattice matched to InP, in the i region of the p(InGaAs)- i(SL) n(InGaAs) diode allowed the possibility of more than two junction thermophotovoltiac device with the enhanced performance in comparison to the conventional p(InGaAs)n(InGaAs) diode.

Tritium-Powered Radiation Sensor Network

Science.gov (United States)

2015-09-01

Photomultiplier Tube, Scintillator, Geiger counter, Zigbee, Wireless Network, Radiation detector, Dirty Bomb 16. SECURITY CLASSIFICATION OF: 17...operational lifetime of 150 years. Persistent sensing of the environment with vibration and radiation (electromagnetic [ EM ], acoustic, gamma, etc.) in...Transportation E-field electric field EH electron-hole EM electromagnetic GaAs gallium arsenide GPS global positioning system InGaP indium gallium

Synthesis and characterization of actinide metal compounds formed by combustion

International Nuclear Information System (INIS)

Behrens, R.G.; King, M.A.

1985-01-01

This paper briefly describes the results of attempts to synthesize arsenides, phosphides, and antimonides of uranium and thorium using Self-Propagating High-Temperature Synthesis (SHS) techniques. This paper first summarizes the chemistry and thermodynamics of these chemical systems, describes SHS synthesis techniques, and then describes the results of the syntheses using data from powder x-ray diffraction, metallographic, and electron microprobe analyses

Space-Based Solar Power System Architecture

Science.gov (United States)

2012-12-01

to this thesis, “the Boeing 702 offers a range of power up to 18 kW. Dual and triple -junction gallium arsenide solar cells enable such high power...CONCLUSIONS ........................................................................................................85 A. KEY POINTS AND...USAF. Without the proper starting point and frame of reference, this thesis would not have been possible. Thank you to everyone who had an influence on

500 MHz transient digitizers based on GaAs CCDs

International Nuclear Information System (INIS)

Bryman, D.A.; Constable, M.; Cresswell, J.V.; Daviel, A.; LeNoble, M.; Mildenberger, J.; Poutissou, R.

1996-11-01

A system of 500 MHz transient digitizers based on gallium arsenide resistive gate charged coupled devices has been developed for an experiment studying rare K decays. CCDs with dynamic range of 8-bits and 128 or 320 pixels are used as analog pipelines. The CCD's are driven by a single phase transport system. Data readout and manipulation occurs at 15.6 MHz. (authors)

West Europe Report, Science and Technology

Science.gov (United States)

1986-01-16

according to operational needs in discrete supplies at from 200 to 350 bars. Inventories of the propellants UDMH [unsymmetric dimethylhydrazine] and N5nü...Philips, Siemens and Thomson, on advanced microprocessors, gallium arsenide integrated circuits, microwave components, high- density memories, flat-panel...centers concerned must indicate their desire to associate and regroup themselves according to flexible formulas and variable configurations. In

Study of reproducibility of measurements with the spectrometer of Bonner multispheres

International Nuclear Information System (INIS)

Azevedo, G.A.; Pereira, W.W.; Patrao, K.C.S.; Fonseca, E.S.

2013-01-01

This work aims to study the metrological behavior of the Bonner Multisphere Spectrometer (BMS) of the LN / LNMRI / IRD - Laboratorio Metrologia de Neutrons / Laboratorio Nacional de Metrologia e Radiacao Ionizante / Instituto de Radioprotecao e Dosimetria, for measurements in repeatability and reproducibility conditions. Initially, a simulation was done by applying the Monte Carlo method, using the MCNP code and respecting the ISO 8529-1 (2001), using the sources of Californium ( 252 Cf), Americium-Beryllium ( 241 AmBe) and californium in heavy water (Cf + D 2 O), all located at a distance of 100 cm from the neutron detector ( 6 Li (Eu) - crystal scintillator). In this program, the counting of neutrons that are captured by the detector was made. The source is located in the center of a sphere of radius 300 cm. Analyzes the impact of these neutrons in a point of the sphere wall, which in this case acted as a neutron detector and from there, it is estimated the number of neutrons that collide in the whole sphere. The purpose is to obtain the neutron count for different energy bands in a solid field of neutrons, since they have a spectrum ranging from a low to a high energy that can also vary within a particular environment. Wishes to obtain new fields with different sources and moderators materials to be used as new reference fields. Measurements are being conducted for these fields, with the aim of analyzing the variability conditions of the measurement (repeatability and reproducibility) in LEN - Laboratorio de Espectrometria de Neutrons of the LN/LMNRI/IRD. Thus, the spectrometer will be used to improve both the knowledge of the spectrum as the standard of neutrons of the lab, proving that a spectrometry is essential for correct measurement

Influence of the atomic force microscope tip on the multifractal analysis of rough surfaces

International Nuclear Information System (INIS)

Klapetek, Petr; Ohlidal, Ivan; Bilek, Jindrich

2004-01-01

In this paper, the influence of atomic force microscope tip on the multifractal analysis of rough surfaces is discussed. This analysis is based on two methods, i.e. on the correlation function method and the wavelet transform modulus maxima method. The principles of both methods are briefly described. Both methods are applied to simulated rough surfaces (simulation is performed by the spectral synthesis method). It is shown that the finite dimensions of the microscope tip misrepresent the values of the quantities expressing the multifractal analysis of rough surfaces within both the methods. Thus, it was concretely shown that the influence of the finite dimensions of the microscope tip changed mono-fractal properties of simulated rough surface to multifractal ones. Further, it is shown that a surface reconstruction method developed for removing the negative influence of the microscope tip does not improve the results obtained in a substantial way. The theoretical procedures concerning both the methods, i.e. the correlation function method and the wavelet transform modulus maxima method, are illustrated for the multifractal analysis of randomly rough gallium arsenide surfaces prepared by means of the thermal oxidation of smooth gallium arsenide surfaces and subsequent dissolution of the oxide films

Local emission spectroscopy of surface micrograins in A{sup III}B{sup V} semiconductors

Energy Technology Data Exchange (ETDEWEB)

Zhukov, N. D., E-mail: ndzhukov@rambler.ru; Gluhovskoy, E. G.; Mosiyash, D. S. [Saratov State University (Russian Federation)

2016-07-15

The density-of-states spectra and the parameters of levels of electron states in locally chosen surface micrograins of indium antimonide and arsenide and gallium arsenide are studied with a tunneling electron microscope in the field-emission mode of measurements. By correlating the current–voltage characteristics with the formula for the probability of emission via levels, the activation energies of the levels (ψ) and the lifetimes of electrons at the levels (τ) are determined. Two types of levels for electron localization are identified. These are levels in the micrograin bulk (ψ ≈ 0.75, 1.15, and 1.59 eV for n-InSb, n-InAs, and n-GaAs, respectively; τ ~ 10{sup –8}–10{sup –7} s) and in the surface region of an i-InSb micrograin (ψ ~ 0.73, 1.33, 1.85, 2.15, 5.1 eV; τ ≈ 5 × 10{sup –8}–3 × 10{sup –7} s). A physical model involving the Coulomb-interaction-induced localization of light electrons and their size quantization determined by the electron effective mass, energy, and concentration and by the surface curvature of the micrograin is proposed.

Environmental assessment of the thermal neutron activation explosive detection system for concourse use at US airports

Energy Technology Data Exchange (ETDEWEB)

Jones, C.G.

1990-08-01

This document is an environmental assessment of a system designed to detect the presence of explosives in checked airline baggage or cargo. The system is meant to be installed at the concourse or lobby ticketing areas of US commercial airports and uses a sealed radioactive source of californium-252 to irradiate baggage items. The major impact of the use of this system arises from direct exposure of the public to scattered or leakage radiation from the source and to induced radioactivity in baggage items. Under normal operation and the most likely accident scenarios, the environmental impacts that would be created by the proposed licensing action would not be significant. 44 refs., 19 figs., 18 tabs.

Alternative irradiation system for efficiency manganese bath determination

Energy Technology Data Exchange (ETDEWEB)

Passos Leite, Sandro, E-mail: sandro@ird.gov.b [Programa de Engenharia Nuclear/COPPE, Universidade Federal do Rio de Janeiro, Ilha do Fundao, Caixa Postal 68509, 21945-970, Rio de Janeiro, RJ (Brazil); Wagner Pereira, Walsan, E-mail: walsan@ird.gov.b [Instituto de Radioprotecao e Dosimetria LNMRI/IRD/CNEN, Av. Salvador Allende, s/no, Recreio dos Bandeirantes, CEP: 22780-160, Rio de Janeiro (Brazil); Xavier da Silva, Ademir, E-mail: ademir@con.ufrj.b [Programa de Engenharia Nuclear/COPPE, Universidade Federal do Rio de Janeiro, Ilha do Fundao, Caixa Postal 68509, 21945-970, Rio de Janeiro, RJ (Brazil); Simoes da Fonseca, Evaldo, E-mail: evaldo@ird.gov.b [Instituto de Radioprotecao e Dosimetria LNMRI/IRD/CNEN, Av. Salvador Allende, s/no, Recreio dos Bandeirantes, CEP: 22780-160, Rio de Janeiro (Brazil); Souza Patrao, Karla Cristina de, E-mail: karla@ird.gov.b [Instituto de Radioprotecao e Dosimetria LNMRI/IRD/CNEN, Av. Salvador Allende, s/no, Recreio dos Bandeirantes, CEP: 22780-160, Rio de Janeiro (Brazil)

2010-12-15

An alternative irradiation system, which works with a radionuclide neutron source and manganese sulphate solution volume have been proposed for efficiency determination of a Manganese Bath System (MBS). This irradiation system was designed by simulation with MCNP5 code, considering a californium neutron source in several manganese sulphate volumes and different neutron reflectors. Although its solution specific activity are less than those in nuclear reactors, the simulation results have showed that the irradiation system proposed takes a manganese neutron capture increase up to 200 times when it compared to manganese neutron capture from a MBS whose diameter is about 100 cm. That becomes possible to use those samples for some of the absolute specific activity measuring methods.

Experimental survey of the potential energy surfaces associated with fission

International Nuclear Information System (INIS)

Britt, H.C.

1980-01-01

Progress in the experimental determination of the properties of the potential energy surface associated with fission is reviewed. The importance of nuclear symmetry effects on the calculation of fission widths is demonstrated. Evidence is presented for the fragmentation of the mass-asymmetric second barrier in the thorium region and the axial asymmetric first barrier in the californium region. Detailed analyses of experimental data suggest the presence of two parallel second barriers; the normal mass-asymmetric, axial-symmetric barrier and a slightly higher mass-symmetric, axial-asymmetric barrier. Experimental barrier parameters are determined systematically and compared with calculations from various theoretical models. Techniques for expanding fission probability measurements to higher energies are discussed. (author)

Environmental assessment of the thermal neutron activation explosive detection system for concourse use at US airports

International Nuclear Information System (INIS)

Jones, C.G.

1990-08-01

This document is an environmental assessment of a system designed to detect the presence of explosives in checked airline baggage or cargo. The system is meant to be installed at the concourse or lobby ticketing areas of US commercial airports and uses a sealed radioactive source of californium-252 to irradiate baggage items. The major impact of the use of this system arises from direct exposure of the public to scattered or leakage radiation from the source and to induced radioactivity in baggage items. Under normal operation and the most likely accident scenarios, the environmental impacts that would be created by the proposed licensing action would not be significant. 44 refs., 19 figs., 18 tabs

Review of microscopic integral cross section data in fundamental reactor dosimetry benchmark neutron fields

International Nuclear Information System (INIS)

Fabry, A.; McElroy, W.N.; Kellogg, L.S.; Lippincott, E.P.; Grundl, J.A.; Gilliam, D.M.; Hansen, G.E.

1976-10-01

The paper is intended to review and critically discuss microscopic integral cross section measurement and calculation data for fundamental reactor dosimetry benchmark neutron fields. Specifically the review covers the following fundamental benchmarks: (1) the spontaneous californium-252 fission neutron spectrum standard field; (2) the thermal-neutron induced uranium-235 fission neutron spectrum standard field; (3) the (secondary) intermediate-energy standard neutron field at the center of the Mol-ΣΣ, NISUS, and ITN--ΣΣ facilities; (4) the reference neutron field at the center of the Coupled Fast Reactor Measurement Facility (CFRMF); (5) the reference neutron field at the center of the 10 percent enriched uranium metal, cylindrical, fast critical; and (6) the (primary) Intermediate-Energy Standard Neutron Field

Radiation annealing of gallium arsenide implanted with sulphur

CERN Document Server

Ardyshev, V M

2002-01-01

Sulfur ions were implanted in a semi-insulating GaAs. Photon annealing (805 deg C/(10-12) s) and the thermal one (800 deg C/30 min) were conducted under SiO sub 2 -films coating obtained by different ways. Contents of GaAs components in films were determined from Rutherford backscattering spectra; concentration profiles of electrons were measured by the voltage-capacitance method. Diffusion of sulfur was shown to go in two directions - to the surface and into bulk of GaAs. The first process was induced by vacancies that had been formed near the surface of semiconductors during the dielectric coating. The coefficient of the bulk-diffusion and diffusion-to-surface of sulfur ions under photon annealing was twice as much as that under thermal one. The doping efficiency was also larger

Shallow doping of gallium arsenide by recoil implantation

International Nuclear Information System (INIS)

Sadana, D.K.; Souza, J.P. de; Rutz, R.F.; Cardone, F.; Norcott, M.H.

1989-01-01

Si atoms were recoil-implanted into GaAs by bombarding neutral (As + ) or dopant (Si + ) ions through a thin Si cap. The bombarded samples were subsequently rapid thermally or furnace annealed at 815-1000 degree C in Ar or arsine ambient. The presence of the recoiled Si in GaAs and resulting n + -doping was confirmed by secondary ion mass spectrometry and Hall measurements. It was found that sheet resistance of 19 cm 3 and the annealing temperature was > 850 degree C. The present electrical data show that the recoil implant method is a viable alternative to direct shallow implant for n + doping of GaAs. 7 refs., 3 figs., 1 tab

Ultrafast Time-Resolved Photoluminescence Studies of Gallium-Arsenide

Science.gov (United States)

Johnson, Matthew Bruce

This thesis concerns the study of ultrafast phenomena in GaAs using time-resolved photoluminescence (PL). The thesis consists of five chapters. Chapter one is an introduction, which discusses the study of ultrafast phenomena in semiconductors. Chapter two is a description of the colliding-pulse mode-locked (CPM) ring dye laser, which is at the heart of the experimental apparatus used in this thesis. Chapter three presents a detailed experimental and theoretical investigation of photoluminescence excitation correlation spectroscopy (PECS), the novel technique which is used to time-resolve ultrafast PL phenomena. Chapters 4 and 5 discuss two applications of the PECS technique. In Chapter 4 the variation of PL intensity in In-alloyed GaAs substrate material is studied, while Chapter 5 discusses the variation of carrier lifetimes in ion-damaged GaAs used in photo-conductive circuit elements (PCEs). PECS is a pulse-probe technique that measures the cross correlation of photo-excited carrier populations. The theoretical model employed in this thesis is based upon the rate equation for a simple three-level system consisting of valence and conduction bands and a single trap level. In the limit of radiative band-to-band dominated recombination, no PECS signal should be observed; while in the capture -dominated recombination limit, the PECS signal from the band-to-band PL measures the cross correlation of the excited electron and hole populations and thus, the electron and hole lifetimes. PECS is experimentally investigated using a case study of PL in semi-insulating (SI) GaAs and In -alloyed GaAs. At 77 K, the PECS signal is characteristic of a capture-dominated system, yielding an electron-hole lifetime of about 200 ps. However, at 5 K the behavior is more complicated and shows saturation effects due to the C acceptor level, which is un-ionized at 5 K. As a first application, PECS is used to investigate the large band-to-band PL contrast observed near dislocations in In-alloyed GaAs. It is found that the PL intensity contrast between bright and dark areas correlates with the ratio of the lifetimes measured using PECS in these areas. Thus, the PL intensity contrast is due to the difference in the carrier lifetimes in the different regions. The carrier lifetimes in the bright and dark regions have different temperature dependences. (Abstract shortened with permission of author.).

Sources of spontaneous emission based on indium arsenide

International Nuclear Information System (INIS)

Zotova, N. V.; Il'inskaya, N. D.; Karandashev, S. A.; Matveev, B. A.; Remennyi, M. A.; Stus', N. M.

2008-01-01

The results obtained for light-emitting diodes based on heterostructures that contain InAs in the active region and are grown by the methods of liquid-phase, molecular-beam, and vapor-phase epitaxy from organometallic compounds are reviewed. The emission intensity, the near-field patterns, and the light-current and current-voltage characteristics of light-emitting diodes that have flip-chip structure or feature a point contact are analyzed.

Sources of spontaneous emission based on indium arsenide

Energy Technology Data Exchange (ETDEWEB)

Zotova, N V; Il' inskaya, N D; Karandashev, S A; Matveev, B. A., E-mail: bmat@iropt3.ioffe.rssi.ru; Remennyi, M A; Stus' , N M [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

2008-06-15

The results obtained for light-emitting diodes based on heterostructures that contain InAs in the active region and are grown by the methods of liquid-phase, molecular-beam, and vapor-phase epitaxy from organometallic compounds are reviewed. The emission intensity, the near-field patterns, and the light-current and current-voltage characteristics of light-emitting diodes that have flip-chip structure or feature a point contact are analyzed.

Superlattice Intermediate Band Solar Cell on Gallium Arsenide

Science.gov (United States)

2015-02-09

13  Figure 11. (a) Contour plot of device EOL efficiency as a function of emitter and i-region thickness for a 1MeV electron...fluence dose of 2x1015cm-2 (b) EOL I-V characteristic of the device...expanded our simulations to include the effect of radiation degradation to assess the end of life ( EOL ) efficiencies of these devices in space. Figure 10

Temperature dependence of electron concentration in cadmium arsenide

NARCIS (Netherlands)

Gelten, M.J.; Blom, F.A.P.

1979-01-01

From measurements of the temperature dependence of the electron concentration in Cd 3 As 2 , we found values for the conduction-band parameters that are in good agreement with those recently reported by Aubin, Caron, and Jay-Gerin. However, in contrast with these authors we found no small overlap,

Multifunctional homojunction gallium arsenide n–p–m-structure

Directory of Open Access Journals (Sweden)

Karimov A. V.

2009-11-01

Full Text Available The brief information about created phototransistor nGaAs–рGaAs–Ag-structure are given. The processes of photogeneration of carriers in the base and in the space-charge layers of semiconductor junction as well as of metal — semiconductor junction are analyzed depending on the mode of inclusion. It is shown the multifunctionality of offered homojunction structure that is perspective for creating the optical receiver or the optical transformer.

Organometallic compounds of the 2-6 group elements of periodic system as perspective substances for microelectrnics

International Nuclear Information System (INIS)

Fedorov, V.A.

1986-01-01

Results of investigating methods of preparation and analysis of organometallic compounds (OMC) of the 2B-6B group elements, behaviour of microimpurities in the process of their complete purification, physical-chemical properties for developing rational flowsheets of OMC purification are presented. Results of microimpurities quantitative transition from OMC to gallium arsenide epitaxial layers are presented. Prospects for OMC application in microelectronics are discussed

Thermionic photovoltaic energy converter

Science.gov (United States)

Chubb, D. L. (Inventor)

1985-01-01

A thermionic photovoltaic energy conversion device comprises a thermionic diode mounted within a hollow tubular photovoltaic converter. The thermionic diode maintains a cesium discharge for producing excited atoms that emit line radiation in the wavelength region of 850 nm to 890 nm. The photovoltaic converter is a silicon or gallium arsenide photovoltaic cell having bandgap energies in this same wavelength region for optimum cell efficiency.

Low power laser irradiation does not affect the generation of signals in a sensory receptor

Energy Technology Data Exchange (ETDEWEB)

Lundeberg, T.; Zhou, J.

1989-01-01

The effect of low power Helium-Neon (He-Ne) and Gallium-Arsenide (Ga-As) laser on the slowly adapting crustacean stretch receptor was studied. The results showed that low power laser irradiation did not affect the membrane potential of the stretch receptor. These results are discussed in relation to the use of low power laser irradiation on the skin overlaying acupuncture points in treatment of pain syndrome.

Results from the high efficiency solar panel experiment flown on CRRES

International Nuclear Information System (INIS)

Ray, K.P.; Mullen, E.G.; Trumble, T.M.

1993-01-01

This paper presents results from the High Efficiency Solar Panel Experiment (HESP) flown on the Combined Release and Radiation Effects Satellite (CRRES). The on-orbit solar cell degradation is correlated with the proton and electron environments. Comparisons between gallium arsenide germanium (GaAs/Ge) and silicon (Si) solar cells are presented, and results from three different annealing methods of like GaAs solar cells are compared

Californium-252 neutron activation analysis of high-level processed nuclear tank waste

International Nuclear Information System (INIS)

Troyer, G.L.; Purcell, M.A.

2000-01-01

The basis for production assessment of the vitrification of Hanford nuclear fuel reprocessing wastes will be high-precision measurements of the elemental sodium content. However, the chemical analysis of both radioactive and nonradioactive components in nuclear waste can be challenged by high radiation dose rates. The dose rates compromise many analytical techniques as well as pose personnel dosimetry risks. In many cases, reduction of dose rates through dilution compromises the precision and sensitivity for certain key components. The use of neutron activation analysis (NAA) provides a method of analysis that avoids the need for dilutions or extensive sample preparation. These waste materials also contain trace quantities of fissionable isotopes, which, through neutron activation, can be estimated by delayed neutron counting of fissioned fragments

Californium-252: isotope for modern radiotherapy of cervix, uterine and vaginal carcinomas

International Nuclear Information System (INIS)

Maruyama, J.; Beach, J.L.; Nagell, J.R. van

1984-01-01

Cf-252 is an isotope that can easily be afterloaded into available gynecological applicators and used for bulky cervix, uterus or vaginal cancer therapy. It is economical, time and cost effective in use, and can be applied to the therapy of many patients throughout the world. It is more effective for neutron therapy than machine fast neutron therapy and is the only form of neutron therapy producing consistent complication-free 5-year cure of advanced cancers currently available. Cf-252 is an isotope for modern gynecological tumor therapy for the future. Isodose curves for Cf-252 implants revealed dose distributions conforming well to tumor. (orig.) [de

Growth of 1.5 micron gallium indium nitrogen arsenic antimonide vertical cavity surface emitting lasers by molecular beam epitaxy

Science.gov (United States)

Wistey, Mark Allan

Fiber optics has revolutionized long distance communication and long haul networks, allowing unimaginable data speeds and noise-free telephone calls around the world for mere pennies per hour at the trunk level. But the high speeds of optical fiber generally do not extend to individual workstations or to the home, in large part because it has been difficult and expensive to produce lasers which emitted light at wavelengths which could take advantage of optical fiber. One of the most promising solutions to this problem is the development of a new class of semiconductors known as dilute nitrides. Dilute nitrides such as GaInNAs can be grown directly on gallium arsenide, which allows well-established processing techniques. More important, gallium arsenide allows the growth of vertical-cavity surface-emitting lasers (VCSELs), which can be grown in dense, 2D arrays on each wafer, providing tremendous economies of scale for manufacturing, testing, and packaging. Unfortunately, GaInNAs lasers have suffered from what has been dubbed the "nitrogen penalty," with high thresholds and low efficiency as the fraction of nitrogen in the semiconductor was increased. This thesis describes the steps taken to identify and essentially eliminate the nitrogen penalty. Protecting the wafer surface from plasma ignition, using an arsenic cap, greatly improved material quality. Using a Langmuir probe, we further found that the nitrogen plasma source produced a large number of ions which damaged the wafer during growth. The ions were dramatically reduced using deflection plates. Low voltage deflection plates were found to be preferable to high voltages, and simulations showed low voltages to be adequate for ion removal. The long wavelengths from dilute nitrides can be partly explained by wafer damage during growth. As a result of these studies, we demonstrated the first CW, room temperature lasers at wavelengths beyond 1.5mum on gallium arsenide, and the first GaInNAs(Sb) VCSELs beyond 1

A new type-B cask design for transporting 252Cf

International Nuclear Information System (INIS)

Simmons, C.M.

2000-01-01

A project to design, certify, and build a new US Department of Energy (DOE) Type B container for transporting >5 mg of 252 Cf is more than halfway to completion. This project was necessitated by the fact that the existing Oak Ridge National Laboratory (ORNL) Type B containers were designed and built many years ago and thus do not have the records and supporting data that current regulations require. Once the new cask is available, it will replace the existing Type B containers. The cask design is driven by the unique properties of 252 Cf, which is a very intense spontaneous fission neutron source and necessitates a large amount of neutron shielding. The cask is designed to contain up to 60 mg of 252 Cf in the form of californium oxide or californium oxysulfate, in pellet, wire, or sintered material forms that are sealed inside small special-form capsules. The new cask will be capable of all modes of transport (land, sea, and air). The ORNL team, composed of technical and purchasing personnel and using rigorous selection criteria, chose NAC, International (NAC), as the subcontractor for the project. In January 1997, NAC started work on developing the conceptual design and performing the analyses. The original design concept was for a tungsten alloy gamma shield surrounded by two concentric shells of NS-4-FR neutron shield material. A visit to US Nuclear Regulatory Commission (NRC) regulators in November 1997 to present the conceptual design for their comments resulted in a design modification when the question of potential straight-line cracking in the NS-4-FR neutron shield material arose. NAC's modified design includes offset, wedgelike segments of the neutron shield material. The new geometry eliminates concerns about straight-line cracking but increases the weight of the packaging and makes the fabrication more complex. NAC has now completed the cask design and performed the analyses (shielding, structural, thermal, etc.) necessary to certify the cask. The cask

Proceedings of the Fiber Optics in the Nuclear Environment Symposium 25-27 March 1980. Volume II. Radiation Physics,

Science.gov (United States)

1980-04-30

800 900 1000 Wavelength (nm) 4. Comparison of material dispersion characteristic between Corning and ITT graded index fiber. 170 _0 10 e 1060 mn Corning...Accelerator (REBA) subjected this device and conmercially available photodiodes (made from silicon, germanium, and indium gallium arsenide phosphide ) to...of wavelength and is shown in Fig. 2. Since approximately one-third of the incident light is reflected at the top surface due to index of refraction

1997 IEEE/LEOS Summer Topical Meeting on Gallium Nitride Materials, Processing and Devices Held in Montreal, Quebec, Canada on 11-15 August 1997

Science.gov (United States)

1998-01-01

refractive index differences in the two branches, their respective dispersion curves will intersect at a certain wavelength, according to our design...wavelengths, DBRs are usually grown lattice- matched to InP using quaternary and ternary phosphide alloys in spite of the low refractive in- dex...validating the refractive index model. In a third step, mirrors based on arsenide-antimonide materials were designed to operate at 1.3 ^.m

Space and Missile Systems Center Standard: Technical Requirements for Electronic Parts, Materials, and Processes used in Space Vehicles

Science.gov (United States)

2013-04-12

glass or oxide passivation over junctions . 4.3 Screening (100 percent). Screening (100 percent) shall be in accordance with section 1400 for the JAN...75 VCE = 75 IC = 75 VCE = 75 IC = 75 Hetero - junction Bipolar Transistor Gallium Arsenide 3/ 105 125 N/A N/A 75 75 Current...HDBK-339 Custom Large Scale Integrated Circuit Development and Acquisition for Space Vehicles MIL-STD-403C Preparation for and Installation of

Terahertz Technology for Defense and Security-Related Applications

OpenAIRE

Iwaszczuk, Krzysztof; Jepsen, Peter Uhd; Heiselberg, Henning

2012-01-01

Denne afhandling omhandler udvalgte aspekter af terahertz (THz) teknologi med potentiale i forsvars- og sikkerheds-relaterede applikationer. En ny metode til samtidig dataopsamling i tidsopløst THz spektroskopi eksperimenter er blevet udviklet. Denne teknik demonstreres ved bestemmelse af fladekonduktiviteten af fotogenererede ladningsbrere i semiisolerende gallium arsenid. En sammenligning med resultater opnået ved hjælp af en standard dataopsamlingsprocedure viser at den nye metode minimere...

Potential means of support for materials processing in space. A history of government support for new technology

Science.gov (United States)

Mckannan, E. C.

1983-01-01

Development of a given technology for national defense and large systems developments when the task is too large or risky for entrepreneurs, yet is clearly in the best interest of the nation are discussed. Advanced research to identify areas of interest was completed. Examples of commercial opportunities are the McDonnell-Douglas Corporation purification process for pharmaceutical products and the Microgravity Research Associates process for growing gallium arsenide crystals in space.

The growth of materials processing in space - A history of government support for new technology

Science.gov (United States)

Mckannan, E. C.

1983-01-01

Development of a given technology for national defense and large systems developments when the task is too large or risky for entrepreneurs, yet is clearly in the best interest of the nation are discussed. Advanced research to identify areas of interest was completed. Examples of commercial opportunities are the McDonnell-Douglas Corporation purification process for pharmaceutical products and the Microgravity Research Associates process for growing gallium arsenide crystals in space.

500 MHz transient digitizers based on GaAs CCDs

Energy Technology Data Exchange (ETDEWEB)

Bryman, D A; Constable, M; Cresswell, J V; Daviel, A; LeNoble, M; Mildenberger, J; Poutissou, R

1996-11-01

A system of 500 MHz transient digitizers based on gallium arsenide resistive gate charged coupled devices has been developed for an experiment studying rare K decays. CCDs with dynamic range of 8-bits and 128 or 320 pixels are used as analog pipelines. The CCD`s are driven by a single phase transport system. Data readout and manipulation occurs at 15.6 MHz. (authors). 12 refs., 15 figs.

Ab initio study of hot electrons in GaAs

OpenAIRE

Bernardi, Marco; Vigil-Fowler, Derek; Ong, Chin Shen; Neaton, Jeffrey B.; Louie, Steven G.

2015-01-01

Hot carrier dynamics critically impacts the performance of electronic, optoelectronic, photovoltaic, and plasmonic devices. Hot carriers lose energy over nanometer lengths and picosecond timescales and thus are challenging to study experimentally, whereas calculations of hot carrier dynamics are cumbersome and dominated by empirical approaches. In this work, we present ab initio calculations of hot electrons in gallium arsenide (GaAs) using density functional theory and many-body perturbation...

Physical-chemical studies of transuranium elements: Progress report for the period April 1, 1985-March 31, 1988

International Nuclear Information System (INIS)

Peterson, J.R.

1987-01-01

New knowledge is being accumulated in the role of the 5f electrons in the bonding in actinide elements and compounds, the relationships of metallic structures to metallic valence and radius, the extent and magnitude of the actinide contraction, the magnetic, thermodynamic, spectroscopic, and crystallographic properties of these materials as related to general theories, the effect of self-irradiation on chemical and physical properties, the chemical and physical consequences of radioactive decay in the bulk-phase solid state, and in general, the range of validity of the actinide hypothesis. Separate reports are given on: spectrophotometric studies of Cf(III) ions in lanthanide trihalide hosts, new ternary transplutonium chalcogenide halides, Raman spectrometric studies of lanthanide trihalides as function of T or P, and solution calorimetry of californium halides

Radionuclide toxicity

International Nuclear Information System (INIS)

Galle, P.

1982-01-01

The aim of this symposium was to review the radionuclide toxicity problems. Five topics were discussed: (1) natural and artificial radionuclides (origin, presence or emission in the environment, human irradiation); (2) environmental behaviour of radionuclides and transfer to man; (3) metabolism and toxicity of radionuclides (radioiodine, strontium, rare gas released from nuclear power plants, ruthenium-activation metals, rare earths, tritium, carbon 14, plutonium, americium, curium and einsteinium, neptunium, californium, uranium) cancerogenous effects of radon 222 and of its danghter products; (4) comparison of the hazards of various types of energy; (5) human epidemiology of radionuclide toxicity (bone cancer induction by radium, lung cancer induction by radon daughter products, liver cancer and leukaemia following the use of Thorotrast, thyroid cancer; other site of cancer induction by radionuclides) [fr

Fabrication of 50-mg 252Cf neutron sources for the FDA [Food and Drug Administration] activation analysis facility

International Nuclear Information System (INIS)

Bigelow, J.E.; Cagle, E.B.; Knauer, J.B.

1987-01-01

The Transuranium Processing Plant (TPP) at ORNL has been requested by the Food and Drug Administration (FDA) to furnish 200 mg of 252 Cf for use in their new activation analysis facility. This paper discusses the procedure to be employed in fabricating the californium into four neutron sources, each containing a nominal 50-mg of 252 Cf. The ORNL Model LSD (Large, Stainless steel, Doubly encapsulated) neutron source consists of a 6.33-mm-diam aluminum pellet doubly encapsulated in Type 304L stainless steel. The pellet is comprised of an aluminum tube holding Cf 2 O 2 SO 4 microspheres confined by pressed aluminum powder. The microspheres are prepared in a separate vessel and then transferred into the specially designed aluminum tube prior to pressing

Design of Indium Arsenide nanowire sensors for pH and biological sensing and low temperature transport through p-doped Indium Arsenide nanowires

DEFF Research Database (Denmark)

Upadhyay, Shivendra

With the goal of real time electrical detection of chemical and biological species, nanowires have shown great promise with high sensitivity due to their large surface to volume ratio. While the focus of such electrical detection has shifted to one dimensional semiconductor nanostuctures, Silicon...

Multiband Gutzwiller theory of the band magnetism of LaO iron arsenide; Multiband Gutzwiller-Theorie des Bandmagnetismus von LaO-Eisen-Arsenid

Energy Technology Data Exchange (ETDEWEB)

Schickling, Tobias

2012-02-23

In this work we apply the Gutzwiller theory for various models for LaOFeAs. It was discovered in 2008 that doped LaOFeAs is superconducting below a temperature of T{sub c} = 28 K. Soon after that discovery, more iron based materials were found which have an atomic structure that is similar to the one of LaOFeAs and which are also superconducting. These materials form the class of iron-based superconductors. Many properties of this material class are in astonishing agreement with the properties of the cuprates. Therefore, studying this new material may promote our understanding of high-T{sub c} superconductivity. Despite great efforts, however, Density Functional Theory calculations cannot reproduce the small magnetic moment in the ground state of undoped LaOFeAs. Such calculations overestimate the magnetic moment by a factor 2-3. Within our Gutzwiller approach, we take additional local Coulomb correlations into account. We show that it is necessary to work with the iron 3d-orbitals and the arsenic 4p-orbitals to obtain a realistic description of LaOFeAs. For a broad parameter regime of the electronic interactions, we find a magnetic moment that is in the region of the experimentally observed values. We claim that the magnetic phase in LaOFeAs can be described as a spin-density wave of Landau-Gutzwiller quasi-particles.

Hybrid solar collector using nonimaging optics and photovoltaic components

Science.gov (United States)

Winston, Roland; Yablonovitch, Eli; Jiang, Lun; Widyolar, Bennett K.; Abdelhamid, Mahmoud; Scranton, Gregg; Cygan, David; Kozlov, Alexandr

2015-08-01

The project team of University of California at Merced (UC-M), Gas Technology Institute, and Dr. Eli Yablonovitch of University of California at Berkeley developed a novel hybrid concentrated solar photovoltaic thermal (PV/T) collector using nonimaging optics and world record single-junction Gallium arsenide (GaAs) PV components integrated with particle laden gas as thermal transfer and storage media, to simultaneously generate electricity and high temperature dispatchable heat. The collector transforms a parabolic trough, commonly used in CSP plants, into an integrated spectrum-splitting device. This places a spectrum-sensitive topping element on a secondary reflector that is registered to the thermal collection loop. The secondary reflector transmits higher energy photons for PV topping while diverting the remaining lower energy photons to the thermal media, achieving temperatures of around 400°C even under partial utilization of the solar spectrum. The collector uses the spectral selectivity property of Gallium arsenide (GaAs) cells to maximize the exergy output of the system, resulting in an estimated exergy efficiency of 48%. The thermal media is composed of fine particles of high melting point material in an inert gas that increases heat transfer and effectively stores excess heat in hot particles for later on-demand use.

Generalized Synthesis of EAs [E = Fe, Co, Mn, Cr] Nanostructures and Investigating Their Morphology Evolution

Directory of Open Access Journals (Sweden)

P. Desai

2015-01-01

Full Text Available This paper illustrates a novel route for the synthesis of nanostructured transition metal arsenides including those of FeAs, CoAs, MnAs, and CrAs through a generalized protocol. The key feature of the method is the use of one-step hot-injection and the clever use of a combination of precursors which are low-melting and highly reactive such as metal carbonyls and triphenylarsine in a solventless setup. This method also facilitates the formation of one-dimensional nanostructures as we move across the periodic table from CrAs to CoAs. The chemical basis of this reaction is simple redox chemistry between the transition metals, wherein the transition metal is oxidized from elemental state (E0 to E3+in lieu of reduction of As3+ to As3−. While the thermodynamic analysis reveals that all these conversions are spontaneous, it is the kinetics of the process that influences morphology of the product nanostructures, which varies from extremely small nanoparticles to nanorods. Transition metal pnictides show interesting magnetic properties and these nanostructures can serve as model systems for the exploration of their intricate magnetism as well as their applications and can also function as starting materials for the arsenide based nanosuperconductors.

Design and simulation of nanoscale double-gate TFET/tunnel CNTFET

Science.gov (United States)

Bala, Shashi; Khosla, Mamta

2018-04-01

A double-gate tunnel field-effect transistor (DG tunnel FET) has been designed and investigated for various channel materials such as silicon (Si), gallium arsenide (GaAs), alminium gallium arsenide (Al x Ga1‑x As) and CNT using a nano ViDES Device and TCAD SILVACO ATLAS simulator. The proposed devices are compared on the basis of inverse subthreshold slope (SS), I ON/I OFF current ratio and leakage current. Using Si as the channel material limits the property to reduce leakage current with scaling of channel, whereas the Al x Ga1‑x As based DG tunnel FET provides a better I ON/I OFF current ratio (2.51 × 106) as compared to other devices keeping the leakage current within permissible limits. The performed silmulation of the CNT based channel in the double-gate tunnel field-effect transistor using the nano ViDES shows better performace for a sub-threshold slope of 29.4 mV/dec as the channel is scaled down. The proposed work shows the potential of the CNT channel based DG tunnel FET as a futuristic device for better switching and high retention time, which makes it suitable for memory based circuits.

Super-Planckian Thermophotovoltaics Without Vacuum Gaps

Science.gov (United States)

Mirmoosa, M. S.; Biehs, S.-A.; Simovski, C. R.

2017-11-01

We introduce the concept of a thermophotovoltaic system whose emitter is separated from the photovoltaic cell by an intermediate thick slab of gallium arsenide. Owing to the engineered structure of the emitter (a multilayer structure of negative- and positive-ɛ layers) together with a high refractiveindex and transparency of the intermediate slab, we achieve a super-Planckian and frequency-selective spectrum of radiative heat transfer which is desirable for the efficient performance of thermophotovoltaic systems.

Space station automation study. Automation requirements derived from space manufacturing concepts. Volume 1: Executive summary

Science.gov (United States)

1984-01-01

The two manufacturing concepts developed represent innovative, technologically advanced manufacturing schemes. The concepts were selected to facilitate an in depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, and artificial intelligence. While the cost effectiveness of these facilities has not been analyzed as part of this study, both appear entirely feasible for the year 2000 timeframe. The growing demand for high quality gallium arsenide microelectronics may warrant the ventures.

High-Temperature Superconductivity in Doped BaFe2As2

International Nuclear Information System (INIS)

Martin, Marianne

2011-01-01

This thesis provides a detailed look on the synthesis, structural features and physical properties of iron arsenides. Especially the properties of BaFe 2 As 2 and the solid solutions (Ba 1-x K x )Fe 2 As 2 , (Ba 1-x Sr x )Fe 2 As 2 and BaFe 2 (As 1-x P x ) 2 which were all synthesized by solid state reactions by heating mixtures of the elements, were intensively investigated.

Investigation and Development of Advanced Surface Microanalysis Techniques and Methods

Science.gov (United States)

1983-04-01

California 94402 and Stephen L. Grube Watkins-Johnson 440 Kings Village Road Scotts Valley, California 95066 as published in Analytical Chemistry , 1985, 57...34 E. Silberg , T. Y. Chang, E. A. Caridi, C. A. Evans Jr. and C. J. Hitzman in Gallium Arsenide and Related Compounds 1982, 10th International Symposium...Spectrometry," P. K. Chu and S. L. Grube, Analytical Chemistry . 13. "Direct Lateral and In-Depth Distributional Analysis for Ionic - Contaminants in

Supralinear photoconductivity of copper doped semi-insulating gallium arsenide

Science.gov (United States)

Schoenbach, K. H.; Joshi, R. P.; Peterkin, F.; Druce, R. L.

1995-05-01

The high gain effect was shown to be a threshold effect and was dependent on the photoactivation energy level. For the studied material, laser energy densities in the order of 10 mJ cm(sup - 2) for a laser pulse duration of 200 ps were needed to switch into the high gain mode. The observed supralinear behavior of the peak photoconductivity and the charge carrier lifetime can be accounted by the shifts in quasi Fermi levels and the occupancy of copper states within the forbidden gap. Numerical simulations were also presented that yielded quantitative values for the trapping cross sections and recombination center densities. From the perspective of applications, the GaAs:Si:Cu material had great potential for high-power repetitive switching and photodetection.

Supralinear photoconductivity of copper doped semi-insulating gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Schoenbach, K.H.; Joshi, R.P.; Peterkin, F. [Physical Electronics Research Institute, Old Dominion University, Norfolk, Virginia 23529 (United States); Druce, R.L. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)

1995-05-15

We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The results of our measurements show that the effective carrier lifetime can change over two orders of magnitude with variations in the intensity of the optical excitation. A threshold intensity level has been observed and can be related to the occupancy of the deep copper level. Numerical simulations have also been carried out to analyze the trapping dynamics. The intensity dependent lifetimes obtained from the simulations match the experimental data very well. Finally, based on the nonlinear intensity dependence of the effective lifetimes, a possible low-energy phototransistor application for the GaAs:Cu material system is presented. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

Nanoscale characterisation of electronic and spintronic nitrides and arsenides

International Nuclear Information System (INIS)

Fay, M W; Han, Y; Edmonds, K W; Wang, K; Campion, R P; Gallagher, B L; Foxon, C T; Hilton, K P; Masterton, A; Wallis, D; Balmer, R S; Uren, M J; Martin, T; Brown, P D

2006-01-01

The limits of applicability of the nanoscale spatial resolution analysis techniques of EFTEM, CBED and dark field imaging as applied to ohmic contacts to AlGaN/GaN and Mn distribution within Ga 1-x Mn x As epilayers are considered. EFTEM can be limited by acquisition times necessitating the post processing of images to compensate for sample drift. Complementary technique of assessment are required to address problems of peak overlaps in energy loss spectra or signal to noise problems for low elemental concentrations. The use of 002 dark field imaging to appraise Ga 1-x Mn x As epilayers is demonstrated

Indium arsenide-on-SOI MOSFETs with extreme lattice mismatch

Science.gov (United States)

Wu, Bin

Both molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) have been used to explore the growth of InAs on Si. Despite 11.6% lattice mismatch, planar InAs structures have been observed by scanning electron microscopy (SEM) when nucleating using MBE on patterned submicron Si-on-insulator (SOI) islands. Planar structures of size as large as 500 x 500 nm 2 and lines of width 200 nm and length a few microns have been observed. MOCVD growth of InAs also generates single grain structures on Si islands when the size is reduced to 100 x 100 nm2. By choosing SOI as the growth template, selective growth is enabled by MOCVD. Post-growth pattern-then-anneal process, in which MOCVD InAs is deposited onto unpatterned SOI followed with patterning and annealing of InAs-on-Si structure, is found to change the relative lattice parameters of encapsulated 17/5 nm InAs/Si island. Observed from transmission electron diffraction (TED) patterns, the lattice mismatch of 17/5 nm InAs/Si island reduces from 11.2 to 4.2% after being annealed at 800°C for 30 minutes. High-k Al2O3 dielectrics have been deposited by both electron-beam-enabled physical vapor deposition (PVD) and atomic layer deposition (ALD). Films from both techniques show leakage currents on the order of 10-9A/cm2, at ˜1 MV/cm electric field, breakdown field > ˜6 MV/cm, and dielectric constant > 6, comparable to those of reported ALD prior arts by Groner. The first MOSFETs with extreme lattice mismatch InAs-on-SOI channels using PVD Al2O3 as the gate dielectric are characterized. Channel recess was used to improve the gate control of the drain current.

Experimental studies on the photoemission of gallium arsenide crystals

International Nuclear Information System (INIS)

Westermann, M.

2003-04-01

In this thesis the study influence of residual gases on the lifetime, the temperature dependence of the quantum yield, and the influence of activation with potassium on both effects for GaAs-photocathodes is described. (HSI)

Electrodeposition of epitaxial CdSe on (111) gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Cachet, H.; Cortes, R.; Froment, M. [Universite Pierre et Marie Curie, Paris (France). Phys. des Liquides et Electrochimie; Etcheberry, A. [Institut Lavoisier (IREM) UMR CNRS C0173, Universite de Versailles- St Quentin en Yvelynes, 45 Avenue des Etats Unis, 78035, Versailles (France)

2000-02-21

Epitaxial growth of CdSe has been achieved on GaAs(111) by electrodeposition from an aqueous electrolyte. The structure of the film corresponds to the cubic modification of CdSe. The quality of epitaxy has been investigated by reflection high energy electron diffraction, transmission electron microscopy and X-ray diffraction techniques. By XPS measurements the chemistry of the CdSe/GaAs interface and the composition of CdSe are determined. (orig.)

Determination of the average number of neutrons per fission event for californium-252

International Nuclear Information System (INIS)

Aleksandrov, B.M.; Belov, L.M.; Drapchinskij, L.V.

1982-01-01

By means of a separate determination of neutron yields and fission event rates, the value of #betta#-bar( 252 Cf) has been measured for a series of new high-purity sources. The improved quality of the source active layers has reduced the error in determining the fission rate to 0.35%. The value obtained for #betta#-bar( 252 Cf) is 3.747+-0.036. A description is given of the design and the parameters of a spherical manganese bath in which the work on refining the value of #betta#-bar( 252 Cf) will be continued. (author)

Chromatographic cation exchange separation of decigram quantities of californium and other transplutonium elements

Energy Technology Data Exchange (ETDEWEB)

Benker, D.E.; Chattin, F.R.; Collins, E.D.; Knauer, J.B.; Orr, P.B.; Ross, R.G.; Wiggins, J.T.

1980-01-01

Decigram quantities of highly radioactive transplutonium elements are routinely partitioned at TRU by chromatographic elution from cation resin using AHIB eluent. By using two high-pressure ion exchange columns, a small one for the initial loading of the feed and a large one for the elution, batch runs containing up to 200 mg of /sup 252/Cf can be made in about 5 hours (2 hours to load the feed and 3 hours for the elution). The number of effluent product fractions and the amount of actinides that must be collected in intermediate fractions are minimized by monitoring response from a flow-through alpha-detector. This process has been reliable and relatively easy to operate, and will continue to be used for partitioning transplutonium elements at TRU.

Transuranium Processing Plant semiannual report of production, status, and plans for period ending June 30, 1975

International Nuclear Information System (INIS)

King, L.J.; Bigelow, J.E.; Collins, E.D.

1976-03-01

During the period January 1, 1975, through June 30, 1975, the following amounts of transuranium elements were recovered from 22 irradiated HFIR targets: 2g 243 Am, 59 g 244 Cm, 51 mg 249 Bk, 465 mg 252 Cf, 2.5 mg 253 Es, and 1.4 pg 257 Fm. In addition, 45 mg of high-purity 248 Cm was operated from 252 Cf which had been recovered and purified during earlier periods, and 56 mg of a lower-quality 248 Cm was separated from californium purification rework solutions. Five HFIR targets, each containing approximately 9 g of actinides (predominantly curium), were fabricated. A new long-term projection showed that 252 Cf production in the TRU-HFIR complex could increase to as much as 2.5 g/year. During the next 18 months, we expect to recover totals of 46 mg of 249 Bk, 520 mg of 252 Cf, 2.0 mg of 253 Es (in a mixture of isotopes), 220 μg of high-purity 253 Es, and 1.6 pg of 257 Fm. We also expect to obtain 125 mg of high-purity 248 Cm from purified californium now in storage. There are no plans to process any of the remaining SRP Pu-Al tubes or to irradiate any plutonium targets in the HFIR; thus, we do not expect to recover any 244 Pu. Two neutron sources were fabricated, bringing the total fabricated to 77. Two sources that had been used previously in various projects were returned to the TRU inventory and are available for reassignment. In special projects, we (1) produced about 1 mg of 250 Cf by irradiation of 249 Bk in HFIR rabbits, and (2) processed some irradiated 248 Cm samples and obtained yield and isotopic composition data for use in determining the capture cross section of 249 Cm in the HFIR. The values that are currently being used for transuranium element decay data and for cross-section data in planning irradiation-processing cycles, calculating production forecasts, and assaying products are tabulated in the Appendix

TEM EDS analysis of epitaxially-grown self-assembled indium islands

Directory of Open Access Journals (Sweden)

Jasmine Sears

2017-05-01

Full Text Available Epitaxially-grown self-assembled indium nanostructures, or islands, show promise as nanoantennas. The elemental composition and internal structure of indium islands grown on gallium arsenide are explored using Transmission Electron Microscopy (TEM Energy Dispersive Spectroscopy (EDS. Several sizes of islands are examined, with larger islands exhibiting high (>94% average indium purity and smaller islands containing inhomogeneous gallium and arsenic contamination. These results enable more accurate predictions of indium nanoantenna behavior as a function of growth parameters.

Neutron activation determination of phosphorus and sulfur in semiconductor materials by 32P-isotope

International Nuclear Information System (INIS)

Nikolaev, A.V.; Gol'dshtejn, M.M.; Gil'bert, Eh.N.; Verevkin, G.V.; Yudelevich, I.G.

1977-01-01

A neutron-activation method has been developed for determining phosphorus and sulphur in germanium, gallium, gallium arsenide, and silicon structures using 32 P isotope. The dioctyl-sulphoxide (DOSO) extraction of phosphoric molybdenum acid (PMA) has been used to separate 32 P in a radiochemically pure form. Correction factors have been calculated due to the 2nd order interference on 30 Si nuclei in determining phosphorus in silicon for various irradiation times and at various cadmium proportions

Effect of antimony substitution in iron pnictide compounds

OpenAIRE

Schmidt, D.; Braun, H. F.

2015-01-01

In the present study we have examined the effect of negative chemical pressure in iron pnictides. We have synthesized substitution series replacing arsenic by antimony in a number of 1111- and 122-iron arsenides and present their crystallographic and physical properties. The SDW transition temperature in LaFeAs$_{\\mathrm{1-x}}$Sb$_{\\mathrm{x}}$O decreases with increasing antimony content, while the superconducting transition temperature in LaFeAs$_{\\mathrm{1-x}}$Sb$_{\\mathrm{x}}$O$_{\\mathrm{0...

Manhattan Project Technical Series The Chemistry of Uranium (I) Chapters 1-10

International Nuclear Information System (INIS)

Rabinowitch, E. I.; Katz, J. J.

1946-01-01

This constitutes Chapters 1 through 10. inclusive, of The Survey Volume on Uranium Chemistry prepared for the Manhattan Project Technical Series. Chapters are titled: Nuclear Properties of Uranium; Properties of the Uranium Atom; Uranium in Nature; Extraction of Uranium from Ores and Preparation of Uranium Metal; Physical Properties of Uranium Metal; Chemical Properties of Uranium Metal; Intermetallic Compounds and Alloy systems of Uranium; the Uranium-Hydrogen System; Uranium Borides, Carbides, and Silicides; Uranium Nitrides, Phosphides, Arsenides, and Antimonides.

Low Level (Sub Threshold), Large Spot Laser Irradiations of the Foveas of Macaca Mulatta.

Science.gov (United States)

1981-11-01

spherules. In a portion of the block containing the macula a degenerating patch is seen, displaying considerable edema, with pyknotic and missing nuclei...6 Peripheral areas 11 Macula 11 Eye # 3 M31 2KD 15 (enucleated 7 days after focal irradiation jby gallium arsenide laser). Control areas 15 Neodymium...laser irradiations peripheral areas 23 Macula 28 TABLE OF CONTENTS continued Page Eye # 5 M443 2JD Patched Eye 32 Most areas 32 area nasal to optic disc

Effect of ion-beam gettering on the GaAs transistor structure parameters under neutron irradiation

International Nuclear Information System (INIS)

Obolenskij, S.V.; Skupov, V.D.

2000-01-01

It is established that the neutron irradiation negative effect on the parameters of the field transistors with the Schottky shut-off on the basis of the epitaxial gallium arsenide is essentially reduced when the argon ions are preliminary implanted into structure on the substrate side. The above effect is explained through remotely controlled gettering by ion irradiation of admixtures and defects in the transistor active areas related with origination of deep levels under the neutron fluence [ru

Experimental study on the production of high density electron bunches from a GaAs photocathode

International Nuclear Information System (INIS)

Calabrese, R.; Masoli, F.; Gong, J.M.; Guidi, V.; Tecchio, L.

1991-01-01

In order to obtain a high charge, low emittance electron source, useful for FEL electron injector and for e + e - collider experiments, we performed a test experiment on a gallium arsenide photocathode, activated by negative electron affinity technique and illuminated with a 10 ns long laser pulse of 532 nm wavelength. We measured a maximum charge delivered, at relatively low potentials, of about 18 nC/bunch. The mean lifetime is greater than 60 h. (orig.)

Situation and perspectives of the development of investigation on photovoltage conversion of solar energy in Kazakhstan

International Nuclear Information System (INIS)

Mansurov, Z.A.; Taurbaev, T.I.; Mikhailov, L.V.; Bychkov, S.G.

1997-01-01

The article presents the talk on the research and development on photovoltaic conversion of solar energy in Kazakhstan given at the International Workshop on applied solar energy held in Tashkent(Uzbekistan) in June 1997. It is shown that the use of solar energy devices in particular on the basis of photovoltaic cells has the economical advantage in Kazakhstan arid lands. The description of some photovoltaic cells on the basis of aluminium and gallium arsenide is presented. (A.A.D.)

Decay Curves and Half-Lives of Gamma-Emitting States from a Study of Prompt Fission Gamma Radiation

Energy Technology Data Exchange (ETDEWEB)

Albinsson, H [Chalmers Univ. of Technology, Goeteborg (SE)

1971-04-15

Measurements were made on the time distributions of the prompt gamma radiation emitted from fragments in the thermal-neutron induced fission of 235U. The gamma radiation emitted during different time intervals after the fission event was studied with the help of a collimator, the position of which was changed along the path of the fragments. In this way decay curves were obtained from which half-lives could be estimated. Time components with half-lives of 7.5, 18 and 60 ps were found and their relative intensities were calculated. Half-lives and associated intensities are in good agreement with earlier data from uranium and californium fission. Problems involved in this type of study are discussed. The collimator technique has proved to be effective for determination of half lives down to less than 10 ps

Neutron radiography for nondestructive testing

International Nuclear Information System (INIS)

John, J.

1979-01-01

Neutron radiography is similar to X-ray inspection in that both depend upon use of radiation that penetrates some materials and is absorbed by others to provide a contrast image of conditions not readily available for visual inspection. X-rays are absorbed by dense materials, such as metals, whereas neutrons readily penetrate metals, but are absorbed by materials containing hydrogen. The neutron radiography has been successfully applied to a number of inspection situations. These include the inspection of explosives, advanced composites, adhesively bonded structures and a number of aircraft engine components. With the availability of Californium-252, it has become feasible to construct mobile neutron radiography systems suitable for field use. Such systems have been used for in-situ inspection of flight line aircraft, particularly to locate and measure hidden corrosion

The CARIBU EBIS control and synchronization system

Science.gov (United States)

Dickerson, Clayton; Peters, Christopher

2015-01-01

The Californium Rare Isotope Breeder Upgrade (CARIBU) Electron Beam Ion Source (EBIS) charge breeder has been built and tested. The bases of the CARIBU EBIS electrical system are four voltage platforms on which both DC and pulsed high voltage outputs are controlled. The high voltage output pulses are created with either a combination of a function generator and a high voltage amplifier, or two high voltage DC power supplies and a high voltage solid state switch. Proper synchronization of the pulsed voltages, fundamental to optimizing the charge breeding performance, is achieved with triggering from a digital delay pulse generator. The control system is based on National Instruments realtime controllers and LabVIEW software implementing Functional Global Variables (FGV) to store and access instrument parameters. Fiber optic converters enable network communication and triggering across the platforms.

Reliability of semiconductor and gas-filled diodes for over-voltage protection exposed to ionizing radiation

Directory of Open Access Journals (Sweden)

Stanković Koviljka

2009-01-01

Full Text Available The wide-spread use of semiconductor and gas-filled diodes for non-linear over-voltage protection results in a variety of possible working conditions. It is therefore essential to have a thorough insight into their reliability in exploitation environments which imply exposure to ionizing radiation. The aim of this paper is to investigate the influence of irradiation on over-voltage diode characteristics by exposing the diodes to californium-252 combined neutron/gamma radiation field. The irradiation of semiconductor over-voltage diodes causes severe degradation of their protection characteristics. On the other hand, gas-filled over-voltage diodes exhibit a temporal improvement of performance. The results are presented with the accompanying theoretical interpretations of the observed changes in over-voltage diode behaviour, based on the interaction of radiation with materials constituting the diodes.

Designing on-line analyzer for coal on belt conveyor using neutron activation technique

International Nuclear Information System (INIS)

Rony Djokorayono; Agus Cahyono

2014-01-01

Basic design of on-line analyzer for coal on belt conveyor using neutron activation technique has been carried out. Compared with sampling technique, this neutron activation technique has some advantages in term of analysis accuracy and time. The design activities performed include the establishment of design requirements, functional requirements, technical requirements, technical specification, detection sub-system design, data acquisition subsystem design, and operator computer console design. This program will use Nal(Tl) scintillation detector to detect gamma-rays emitted by elements in coal due to neutron activation of a neutron source, "2"5"2Cf (Californium-252). This basic design of on-line analyzer for coal on belt conveyor using neutron activation technique should be followed up with the development of detailed design, prototype construction, and field testing. (author)

Nuclear assay of coal. Volume 8. Continuous nuclear assay of coal (CONAC). Final report

International Nuclear Information System (INIS)

Lagarias, J.; Irminger, P.; Dodson, W.

1979-01-01

Using californium-252 as a source of exciting neutrons, prompt gamma photons emitted by elemental nuclei in the coal have been measured using several detectors, including sodium-iodide and germanium-lithium. Several coal types, including bituminous, subbituminous lignite and anthracite were crushed to various top sizes and analyzed carefully by traditional ASTM wet chemistry techniques at two or three different laboratories. The elements (sulfur, hydrogen, carbon, aluminum, silicon, iron, calcium, sodium, nitrogen, and chlorine) were determined by prompt neutron activations and the quantities compared with those of the wet chemical analyses. Since satisfactory correlation has been obtained at bench-scale level using 100 to 200 kG samples, an apparatus has been designed to analyze a coal stream of up to 50 ton/hour, at an electric power generating station

Neutron dosimetry and spectrometry with Bonner spheres. Working out a log-normal reference matrix

International Nuclear Information System (INIS)

Zaborowski, Henrick.

1981-11-01

From the experimental and theoretical studies made upon the BONNER's spheres System with a I 6 Li(Eu) crystal and with a miniaturized 3 He counter we get the normalized energy response functions R*sub(i)(E). This normalization is obtained by the mathematization of the Resolution Function R*(i,E) in the Log-Normal distribution hypothesis to mono energetic neutrons given in April 1976 to the International Symposium on Californium 252. The fit of the Log-Normal Hypothesis with the experimental and Theoretical data is very satisfactory. The parameter's tabulated values allow a precise interpolation, at all energies between 0.4 eV and 15 MeV and for all spheres diameters between 2 and 12 inches, of the discretized R*sub(ij) Reference Matrix for the applications to neutron dosimetry and spectrometry [fr

The CARIBU EBIS control and synchronization system

Energy Technology Data Exchange (ETDEWEB)

Dickerson, Clayton, E-mail: cdickerson@anl.gov; Peters, Christopher, E-mail: cdickerson@anl.gov [Argonne National Laboratory, Argonne, IL 60439 (United States)

2015-01-09

The Californium Rare Isotope Breeder Upgrade (CARIBU) Electron Beam Ion Source (EBIS) charge breeder has been built and tested. The bases of the CARIBU EBIS electrical system are four voltage platforms on which both DC and pulsed high voltage outputs are controlled. The high voltage output pulses are created with either a combination of a function generator and a high voltage amplifier, or two high voltage DC power supplies and a high voltage solid state switch. Proper synchronization of the pulsed voltages, fundamental to optimizing the charge breeding performance, is achieved with triggering from a digital delay pulse generator. The control system is based on National Instruments realtime controllers and LabVIEW software implementing Functional Global Variables (FGV) to store and access instrument parameters. Fiber optic converters enable network communication and triggering across the platforms.

Chemical consequences of radioactive decay. 1. Study of 249Cf ingrowth into crystalline 249BkBr3: a new crystalline phase of CfBr3

International Nuclear Information System (INIS)

Young, J.P.; Haire, R.G.; Peterson, J.R.; Ensor, D.D.; Fellows, R.L.

1980-01-01

Spectrophotometric and x-ray powder diffraction methods have been applied to a study of the ingrowth of californium-249 by β - decay of berkelium-249 in crystalline 249 BkBr 3 . It was found that the Cf daughter grows in with the same oxidation state and crystal structure as the parent. Thus, six-coordinate BkBr 3 (AlCl 3 -type monoclinic structure) generates six-coordinate CfBr 3 , and eight-coordinate BkBr 3 (PuBr 3 -type orthorhombic structure) generates eight-coordinate CfBr 3 , a previously unknown form of CfBr 3 . It was also found that the daughter Cf(III) in the BkBr 3 parent compound can be reduced to Cf(II) by treatment with H 2 , as it can in pure CfBr 3 . 5 figures

Provenance and composition study on Terengganu inscribed stone using in-situ nuclear technology

International Nuclear Information System (INIS)

Jaafar Abdullah; Roslan Yahya; Hearie Hassan; Engku Mohd Fahmi Engku Chik; Mohamad Rabaie Shari; Airwan Affendi Mahmood; Abdul Quddoss Abu Bakar; Ainul Mardhiah Terry

2012-01-01

This paper focused on the analysis of trace elements and provenance study of the Inscribed Stone of Terengganu (BBPT) using Neutron-induced Prompt Gamma-Ray Techniques (NIPGAT). In this study, portable NIPGAT system was designed and developed by using volume-based measurement. It is a nondestructive testing technique for the samples. This system uses low activity of isotopic neutron radioactive source from californium-252 (Cf-252) as an irradiation source. Gamma ray spectroscopy as well as specialized computer software has been utilized to conduct the research. The study has determined that the stone was a dolerite stone based on the composition of the stone elements. Although most of the scientific data for this study have been collected, this project is still running to complete the scope of provenance study. (author)

Nuclear fission and the transuranium elements

International Nuclear Information System (INIS)

Seaborg, G.T.

1989-02-01

Many of the transuranium elements are produced and isolated in large quantities through the use of neutrons furnished by nuclear fission reactions: plutonium (atomic number 94) in ton quantities; neptunium (93), americium (95), and curium (96) in kilogram quantities; berkelium (97) in 100 milligram quantities; californium (98) in gram quantities; and einsteinium (99) in milligram quantities. Transuranium isotopes have found many practical applications---as nuclear fuel for the large-scale generation of electricity, as compact, long-lived power sources for use in space exploration, as means for diagnosis and treatment in the medical area, and as tools in numerous industrial processes. Of particular interest is the unusual chemistry and impact of these heaviest elements on the periodic table. This account will feature these aspects. 9 refs., 5 figs

Nuclear fission and the transuranium elements

Energy Technology Data Exchange (ETDEWEB)

Seaborg, G.T.

1989-02-01

Many of the transuranium elements are produced and isolated in large quantities through the use of neutrons furnished by nuclear fission reactions: plutonium (atomic number 94) in ton quantities; neptunium (93), americium (95), and curium (96) in kilogram quantities; berkelium (97) in 100 milligram quantities; californium (98) in gram quantities; and einsteinium (99) in milligram quantities. Transuranium isotopes have found many practical applications---as nuclear fuel for the large-scale generation of electricity, as compact, long-lived power sources for use in space exploration, as means for diagnosis and treatment in the medical area, and as tools in numerous industrial processes. Of particular interest is the unusual chemistry and impact of these heaviest elements on the periodic table. This account will feature these aspects. 9 refs., 5 figs.

Joint Services Electronics Program: Basic Research in Electronics (JSEP) at the University of Texas at Austin. Appendix.

Science.gov (United States)

1986-12-31

applications in tration on the temperature response, an effect also found the processing of Si and III-V compound semiconductors in silicon by Seidel et al. (5...Dannefaer, B. Hogg, and D. Kerr, "Defect Characterization in V. Ckil mo and Cofmment Gallium Arsenide By Positron Annihilation ," in Thirteenth We...unnecessary In "A ’I.I %’ S. 4 Brower et l. A schematic of the experimental arrangement emplSyed for application of the homodyne spectroscopy technique to

Using of solar energy in Republic of Georgia

International Nuclear Information System (INIS)

Meladze, N.

1997-01-01

The article presents the talk on the use of solar energy in Georgia given at the International Workshop on applied solar energy held in Tashkent(Uzbekistan) in June 1997. The main use of solar energy in the Republic is in solar heating systems developed and produced in Georgia. Presently 12 projects are in progress for effective use of renewable energy sources. Among them the research and development on photovoltaic cells on the basis of silicon and gallium arsenide solar cells. (A.A.D.)

Microwave monolithic integrated circuit development for future spaceborne phased array antennas

Science.gov (United States)

Anzic, G.; Kascak, T. J.; Downey, A. N.; Liu, D. C.; Connolly, D. J.

1984-01-01

The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented, highlighting the advantages of a distributed amplifier approach compared to the conventional single power source designs. Previously announced in STAR as N84-13399

Microwave monolithic integrated circuit development for future spaceborne phased array antennas

Science.gov (United States)

Anzic, G.; Kascak, T. J.; Downey, A. N.; Liu, D. C.; Connolly, D. J.

The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented, highlighting the advantages of a distributed amplifier approach compared to the conventional single power source designs. Previously announced in STAR as N84-13399

Infrared and millimeter waves v.14 millimeter components and techniques, pt.V

CERN Document Server

Button, Kenneth J

1985-01-01

Infrared and Millimeter Waves, Volume 14: Millimeter Components and Techniques, Part V is concerned with millimeter-wave guided propagation and integrated circuits. In addition to millimeter-wave planar integrated circuits and subsystems, this book covers transducer configurations and integrated-circuit techniques, antenna arrays, optoelectronic devices, and tunable gyrotrons. Millimeter-wave gallium arsenide (GaAs) IMPATT diodes are also discussed. This monograph is comprised of six chapters and begins with a description of millimeter-wave integrated-circuit transducers, focusing on vario

Utilization of radiation facilities at TNRC for shielding researches and related topics

Energy Technology Data Exchange (ETDEWEB)

Akki, T S [Physics Department, Nuclear Physics and Radiation Shielding Division Tajura Nuclear Research Center, Tripoli (Libyan Arab Jamahiriya)

1997-12-31

This paper presents the running shielding research activities at Tajura Nuclear research center. The main area of researches are concentrated on the investigation of different types of concrete made from local materials such as conventional concrete, Magnetite-Limonite concrete, and heat resistant concrete. The measuring techniques used were neutron-gamma spectrometry, and activation foils. The measurements were performed using collimated beam of reactor neutrons emitted from one of the horizontal channels, as well as from californium-252 neutron source. The transmitted neutron spectra through concrete barriers of different thicknesses were measured by a scintillation spectrometer with NE-213 liquid organic scintillator. A non-destructive testing of some reactor materials were also carried out using neutron and gamma ray computerized tomography technique (CT). Some experiments were also carried out related to measurements of neutron depth dose distributions inside tissue equivalent materials. 10 figs.

Dust grain charges in a nuclear-track plasma and the formation of dynamic vortex dust structures

International Nuclear Information System (INIS)

Rykov, V.A.; Khudyakov, A.V.; Filinov, V.S.; Vladimirov, V.I.; Deputatova, L.V.; Krutov, D.V.; Nefedov, A.P.; Fortov, V.E.

2002-01-01

Results are presented from Monte Carlo calculations of the electric charge of dust grains in a plasma produced during the slowing down of the radioactive decay products of californium nuclei in neon. The dust grain charging is explained for the first time as being due to the drift of electrons and ions in an external electric field. It is shown that the charges of the grains depend on their coordinates and strongly fluctuate with time. The time-averaged grain charges agree with the experimental data obtained on ordered liquidlike dust structures in a nuclear-track plasma. The time-averaged dust grain charges are used to carry out computer modeling of the formation of dynamic vortex structures observed in experiments. Evidence is obtained of the fact that the electrostatic forces experienced by the dust grains are potential in character

Transuranic biokinetic parameters for marine invertebrates--a review.

Science.gov (United States)

Ryan, T P

2002-04-01

A catalogue of biokinetic parameters for the transuranic elements plutonium, americium, curium, neptunium, and californium in marine invertebrates is presented. The parameters considered are: the seawater-animal concentration factor (CF); the sediment-animal concentration ratio (CR); transuranic assimilation efficiency; transuranic tissue distribution and transuranic elimination rates. With respect to the seawater-animal CF, authors differ considerably on how they define this parameter and a seven-point reporting system is suggested. Transuranic uptake from sediment by animals is characterised by low CRs. The assimilation efficiencies of transuranic elements in marine invertebrates are high compared to vertebrates and mammals in general and the distribution of transuranics within the body tissue of an animal is dependent on the uptake path. The elimination of transuranics from most species examined conformed to a standard biphasic exponential model though some examples with three elimination phases were identified.

Off-line commissioning of EBIS and plans for its integration into ATLAS and CARIBU

Energy Technology Data Exchange (ETDEWEB)

Ostroumov, P. N., E-mail: ostroumov@anl.gov; Barcikowski, A.; Dickerson, C. A.; Mustapha, B.; Perry, A.; Sharamentov, S. I.; Vondrasek, R. C.; Zinkann, G. [Argonne National Laboratory, Argonne, Illinois 60439 (United States)

2016-02-15

An Electron Beam Ion Source Charge Breeder (EBIS-CB) has been developed at Argonne to breed radioactive beams from the CAlifornium Rare Isotope Breeder Upgrade (CARIBU) facility at Argonne Tandem Linac Accelerator System (ATLAS). The EBIS-CB will replace the existing ECR charge breeder to increase the intensity and significantly improve the purity of reaccelerated radioactive ion beams. The CARIBU EBIS-CB has been successfully commissioned offline with an external singly charged cesium ion source. The performance of the EBIS fully meets the specifications to breed rare isotope beams delivered from CARIBU. The EBIS is being relocated and integrated into ATLAS and CARIBU. A long electrostatic beam transport system including two 180° bends in the vertical plane has been designed. The commissioning of the EBIS and the beam transport system in their permanent location will start at the end of this year.

Off-line commissioning of EBIS and plans for its integration into ATLAS and CARIBU

Science.gov (United States)

Ostroumov, P. N.; Barcikowski, A.; Dickerson, C. A.; Mustapha, B.; Perry, A.; Sharamentov, S. I.; Vondrasek, R. C.; Zinkann, G.

2016-02-01

An Electron Beam Ion Source Charge Breeder (EBIS-CB) has been developed at Argonne to breed radioactive beams from the CAlifornium Rare Isotope Breeder Upgrade (CARIBU) facility at Argonne Tandem Linac Accelerator System (ATLAS). The EBIS-CB will replace the existing ECR charge breeder to increase the intensity and significantly improve the purity of reaccelerated radioactive ion beams. The CARIBU EBIS-CB has been successfully commissioned offline with an external singly charged cesium ion source. The performance of the EBIS fully meets the specifications to breed rare isotope beams delivered from CARIBU. The EBIS is being relocated and integrated into ATLAS and CARIBU. A long electrostatic beam transport system including two 180° bends in the vertical plane has been designed. The commissioning of the EBIS and the beam transport system in their permanent location will start at the end of this year.

Robotics and remote systems applications

International Nuclear Information System (INIS)

Rabold, D.E.

1996-01-01

This article is a review of numerous remote inspection techniques in use at the Savannah River (and other) facilities. These include: (1) reactor tank inspection robot, (2) californium waste removal robot, (3) fuel rod lubrication robot, (4) cesium source manipulation robot, (5) tank 13 survey and decontamination robots, (6) hot gang valve corridor decontamination and junction box removal robots, (7) lead removal from deionizer vessels robot, (8) HB line cleanup robot, (9) remote operation of a front end loader at WIPP, (10) remote overhead video extendible robot, (11) semi-intelligent mobile observing navigator, (12) remote camera systems in the SRS canyons, (13) cameras and borescope for the DWPF, (14) Hanford waste tank camera system, (15) in-tank precipitation camera system, (16) F-area retention basin pipe crawler, (17) waste tank wall crawler and annulus camera, (18) duct inspection, and (19) deionizer resin sampling

Separation of 248Cm (III) from 252Cf (III) and its use in time resolved fluorescence spectroscopic (TRFS) studies

International Nuclear Information System (INIS)

Murali, M.S.; Nair, A.G.C.; Gujar, R.B.; Jain, A.; Tomar, B.S.; Godbole, S.V.; Reddy, A.V.R.; Manchanda, V.K.

2008-07-01

The present report gives a description of the methodology for the separation of 248 Cm(III) from decayed 252 Cf (III) waste solution. The waste solution was first assayed for 252 Cf content by neutron counting using a neutron well coincidence counter. The sample was subjected to the chemical separation of 248 Cm (III) from 252 Cf (III) following anion and cation exchange chromatography. The alpha spectrum of the separated curium fraction showed peaks due to 246 Cm and 248 Cm while the corresponding alpha spectrum of californium fraction showed 249,250,251,252 Cf. The gamma ray abundances of 249 Cf were determined with respect to its gamma rays of 387 keV and the data agreed well with that in literature. Separated Cm(III) was further characterized by recording its time resolved fluorescence spectrum (TRFS) in aqueous medium. (author)

Measurements of the neutron capture cross sections and incineration potentials of minor-actinides in high thermal neutron fluxes: Impact on the transmutation of nuclear wastes

International Nuclear Information System (INIS)

Bringer, O.

2007-10-01

This thesis comes within the framework of minor-actinide nuclear transmutation studies. First of all, we have evaluated the impact of minor actinide nuclear data uncertainties within the cases of 241 Am and 237 Np incineration in three different reactor spectra: EFR (fast), GT-MHR (epithermal) and HI-HWR (thermal). The nuclear parameters which give the highest uncertainties were thus highlighted. As a result of fact, we have tried to reduce data uncertainties, in the thermal energy region, for one part of them through experimental campaigns in the moderated high intensity neutron fluxes of ILL reactor (Grenoble). These measurements were focused onto the incineration and transmutation of the americium-241, the curium-244 and the californium-249 isotopes. Finally, the values of 12 different cross sections and the 241 Am isomeric branching ratio were precisely measured at thermal energy point. (author)

Testing of ENDF/B cross section data in the Californium-252 neutron benchmark field

International Nuclear Information System (INIS)

Mannhart, W.

1979-01-01

The fission neutron field of 252 Cf presently represents one of the most well-known neutron benchmark fields. For 13 neutron reactions which are of importance in reactor metrology, measurements of spectrum-averaged cross sections, [sigma], performed in this neutron field were compared with calculated average cross sections. This comparison allows one to draw conclusions as to the quality of different sigma(E) data taken from ENDF/B-IV, from ENDF/B-V, and from recent experiments and used in the calculation of average cross sections. The comparison includes an uncertainty analysis regarding the different uncertainty contributions of [sigma], of sigma(E), and of the spectral distribution of 252 Cf fission neutrons. Additionally, in a few examples, sensitivity studies were carried out. The sensitivity of the spectrum-averaged cross sections to individual characteristics of the sigma(E) data, such as normalization factors or shifts in the energy scale, was investigated. Similarly, the sensitivity of [sigma] to the spectral distribution of 252 Cf was determined. 4 figures, 2 tables

Total neutron cross sections of berkelium-249 and californium-249 below 100 eV

International Nuclear Information System (INIS)

Benjamin, R.W.; Harvey, J.A.; Hill, N.W.; Pandey, M.S.; Carlton, R.F.

1979-01-01

The neutron total cross sections of 249 Bk and 249 Cf have been measured from 0.03 to 100 eV using the Oak Ridge Electron Linear Accelerator (ORELA) as a source of pulsed neutrons. The 1.6 mm dia. cylindrical transmission samples contained initially up to 5.3 mg of 98% 249 Bk and 2% 249 Cf: 4.5 years later, when the final measurements were made, the composition of the samples had become 2.5% 249 Bk, 96.9% 249 Cf, and 0.6% 245 Cm. Samples were cooled with liquid nitrogen to reduce Doppler broadening. Thirty-nine resonances were identified in 249 Bk and analyzed using a single-level Breit-Wigner formalism. Fifty-five resonances were identified in 249 Cf and analyzed using an R-matrix multilevel formalism. Fifty-five resonances were identified in 249 Cf and analyzed using an R-matrix multilevel formalism. The resonance parameters obtained have been used to determine the average level spacings and the s-wave neutron and fission strength functions. Where possible, bound-level parameters were derived to fit the thermal neutron total cross section data

Lasers Induced Damage in Optical Materials: 1985. Proceedings of the Symposium on Optical Materials for High-Power Lasers (17th) Held in Boulder, Colorado on October 28-30, 1985

Science.gov (United States)

1988-07-01

1985, pp. 1626-1633. [2] S. Dannefaer, B. Hogg, and D. Kerr, "Defect Characterization in Gallium Arsenide by Positron Annihilation ," Thirteenth...23, No. 4, 5, . " J. J.R. ;-!cteil, G.A. Al-Jumaily, K.C. Jungling, and A.C. Barron, "Properties of TiO2 , aridSiO 2 Thin Films Deposited Using ion...Sputter Deposited SiO 2 / TiO2 Coatings J. R. Sites and H. Demiryont Physics Department, Colorado State University Fort Collins, CO 80523 A-ray

Radiation performance of AlGaAs concentrator cells and expected performance of cascade structures

International Nuclear Information System (INIS)

Curtis, H.B.; Swartz, C.K.; Hart, R.E. Jr.

1987-01-01

Aluminum gallium arsenide, GaAs, silicon and InGaAs cells have been irradiated with 1 MeV electrons and 37 MeV protons. These cells are candidates for individual cells in a cascade structure. Data is presented for both electron and proton irradiation studies for one sun and a concentration level of 100X AMO. Results of calculations on the radiation resistance of cascade cell structures based on the individual cell data are also presented. Both series connected and separately connected structures are investigated

Formation of radiation-induced point defects in silicon doped thin films upon ion implantation and activating annealing

International Nuclear Information System (INIS)

Bublik, V.T.; Shcherbachev, K.D.; Komarnitskaya, E.A.; Parkhomenko, Yu.N.; Vygovskaya, E.A.; Evgen'ev, S.B.

1999-01-01

The formation and relaxation processes for radiation-induced defects in the implantation of 50 keV Si + ions into gallium arsenide and subsequent 10-min annealing in arsine at 850 deg. C have been studied by the triple-crystal X-ray diffractometry and secondary-ion mass spectroscopy techniques. It is shown that the existence of the vacancy-enriched layer stimulating diffusion of introduced dopants into the substrate surface can significantly affect the distribution profile of the dopant in the course of preparation of thin implanted layers

The effect of laser radiation on eyesight and determination of safety distance when using laser simulators

International Nuclear Information System (INIS)

Rakochevicj, S.; Dugandzhija, S.

1989-01-01

The influence of laser emission from the GaAs laser in a spectrum close infrared range on human eye and skin has been discussed. The application of gallium arsenide laser injections includes laser simulators. Analytic expression is defined. It is used to calculate the safety distance for the given parameters. There is a diagram of the programme procedure for calculation and graphical analysis of safety distance. Typical dependences of safety distance on the energy and divergency of laser radiation are discussed. (author). 5 refs.; 14 figs

Magnetic properties changes of MnAs thin films irradiated with highly charged ions

OpenAIRE

Trassinelli , Martino; Gafton , V.; Eddrief , Mahmoud; Etgens , Victor H.; Hidki , S.; Lacaze , Emmanuelle; Lamour , Emily; Luo , X.; Marangolo , Massimiliano; Merot , Jacques; Prigent , Christophe; Reuschl , Regina; Rozet , Jean-Pierre; Steydli , S.; Vernhet , Dominique

2013-01-01

International audience; We present the first investigation on the effect of highly charged ion bombardment on a manganese arsenide thin film. The MnAs films, 150~nm thick, are irradiated with 90 keV Ne$^{9+}$ ions with a dose varying from $1.6\\times10^{12}$ to $1.6\\times10^{15}$~ions/cm$^2$. The structural and magnetic properties of the film after irradiation are investigated using different techniques, namely, X-ray diffraction, magneto-optic Kerr effect and magnetic force microscope. Prelim...

High temperature X-ray topography on silicon and gallium arsenide

International Nuclear Information System (INIS)

Krueger, H.E.

1976-01-01

Beginning with a review of the different theories of X-ray scattering on perfect and deformed crystals, results of the dynamic theory relevant specifically for X-ray topography are presented. The reflected intensity recorded in a X-ray topogram is discussed as a function of the angle of incidence, crystal thickness and lateral distribution. These results, together with fundamental relations of the DT which are developed in the annex, give insight into the contrasts induced by defects. Using practical examples Borrmann contrast, contrast produced by point defect agglomerates and dislocations and the Burgers vector method are explained. Thus the whole spectrum of contrast phenomena observed in the experimental part of the paper is presented. The experimental results were achieved with a high-temperature X-ray topography facility constructed for this purpose. The facility is described. (orig./HPOE) [de

First principles calculation of two dimensional antimony and antimony arsenide

Energy Technology Data Exchange (ETDEWEB)

Pillai, Sharad Babu, E-mail: sbpillai001@gmail.com; Narayan, Som; Jha, Prafulla K. [Department. of Physics, Faculty of Science, The M. S. University of Baroda, Vadodara-390002 (India); Dabhi, Shweta D. [Department of Physics, Maharaja Krishnakumarsinhji Bhavnagar University, Bhavnagar-364001 (India)

2016-05-23

This work focuses on the strain dependence of the electronic properties of two dimensional antimony (Sb) material and its alloy with As (SbAs) using density functional theory based first principles calculations. Both systems show indirect bandgap semiconducting character which can be transformed into a direct bandgap material with the application of relatively small strain.

Temperature dependence of the two photon absorption in indium arsenide

International Nuclear Information System (INIS)

Berryman, K.W.; Rella, C.W.

1995-01-01

Nonlinear optical processes in semiconductors have long been a source of interesting physics. Two photon absorption (TPA) is one such process, in which two photons provide the energy for the creation of an electron-hole pair. Researchers at other FEL centers have studied room temperature TPA in InSb, InAs, and HgCdTe. Working at the Stanford Picosecond FEL Center, we have extended and refined this work by measuring the temperature dependence of the TPA coefficient in InAs over the range from 80 to 350 K at four wavelengths: 4.5, 5.06, 6.01, and 6.3 microns. The measurements validate the functional dependence of recent band structure calculations with enough precision to discriminate parabolic from non-parabolic models, and to begin to observe smaller effects, such as contributions due to the split-off band. These experiments therefore serve as a strong independent test of the Kane band theory, as well as providing a starting point for detailed observations of other nonlinear absorption mechanisms

High-performance indium gallium phosphide/gallium arsenide heterojunction bipolar transistors

Science.gov (United States)

Ahmari, David Abbas

Heterojunction bipolar transistors (HBTs) have demonstrated the high-frequency characteristics as well as the high linearity, gain, and power efficiency necessary to make them attractive for a variety of applications. Specific applications for which HBTs are well suited include amplifiers, analog-to-digital converters, current sources, and optoelectronic integrated circuits. Currently, most commercially available HBT-based integrated circuits employ the AlGaAs/GaAs material system in applications such as a 4-GHz gain block used in wireless phones. As modern systems require higher-performance and lower-cost devices, HBTs utilizing the newer, InGaP/GaAs and InP/InGaAs material systems will begin to dominate the HBT market. To enable the widespread use of InGaP/GaAs HBTs, much research on the fabrication, performance, and characterization of these devices is required. This dissertation will discuss the design and implementation of high-performance InGaP/GaAs HBTs as well as study HBT device physics and characterization.

Magnetoelectric Effect in Gallium Arsenide-Nickel-Tin-Nickel Multilayer Structures

Science.gov (United States)

Filippov, D. A.; Tikhonov, A. A.; Laletin, V. M.; Firsova, T. O.; Manicheva, I. N.

2018-02-01

Experimental data have been presented for the magnetoelectric effect in nickel-tin-nickel multilayer structures grown on a GaAs substrate by cathodic electrodeposition. The method of fabricating these structures has been described, and the frequency dependence of the effect has been demonstrated. It has been shown that tin used as an intermediate layer reduces mechanical stresses due to the phase mismatch at the Ni-GaAs interface and, thus, makes it possible to grow good structures with a 70-μm-thick Ni layer. The grown structures offer good adhesion between layers and a high Q factor.

High-pressure phase transition and phase diagram of gallium arsenide

Science.gov (United States)

Besson, J. M.; Itié, J. P.; Polian, A.; Weill, G.; Mansot, J. L.; Gonzalez, J.

1991-09-01

Under hydrostatic pressure, cubic GaAs-I undergoes phase transitions to at least two orthorhombic structures. The initial phase transition to GaAs-II has been investigated by optical-transmittance measurements, Raman scattering, and x-ray absorption. The structure of pressurized samples, which are retrieved at ambient, has been studied by x-ray diffraction and high-resolution diffraction microscopy. Various criteria that define the domain of stability of GaAs-I are examined, such as the occurrence of crystalline defects, the local variation in atomic coordination number, or the actual change in crystal structure. These are shown not to occur at the same pressure at 300 K, the latter being observable only several GPa above the actual thermodynamic instability pressure of GaAs-I. Comparison of the evolution of these parameters on increasing and decreasing pressure locates the thermodynamic transition region GaAs-I-->GaAs-II at 12+/-1.5 GPa and at 300 K that is lower than generally reported. The use of thermodynamic relations around the triple point, and of regularities in the properties of isoelectronic and isostructural III-V compounds, yields a phase diagram for GaAs which is consistent with this value.

Optical verification of the valence band structure of cadmium arsenide

NARCIS (Netherlands)

Gelten, M.J.; Es, van C.M.; Blom, F.A.P.; Jongeneelen, J.W.F.

1980-01-01

Optical absorption measurements were performed on thin single crystalline samples of Cd3As2 at temperatures of 300 K and 10 K. At low temperature the interband absorption coefficient shows clearly two steps due to direct transitions from the heavy hole and light hole valence bands to the conduction

Size-effects in indium gallium arsenide nanowire field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Zota, Cezar B., E-mail: cezar.zota@eit.lth.se; Lind, E. [Department of Electrical and Information Technology, Lund University, Lund 22101 (Sweden)

2016-08-08

We fabricate and analyze InGaAs nanowire MOSFETs with channel widths down to 18 nm. Low-temperature measurements reveal quantized conductance due to subband splitting, a characteristic of 1D systems. We relate these features to device performance at room-temperature. In particular, the threshold voltage versus nanowire width is explained by direct observation of quantization of the first sub-band, i.e., band gap widening. An analytical effective mass quantum well model is able to describe the observed band structure. The results reveal a compromise between reliability, i.e., V{sub T} variability, and on-current, through the mean free path, in the choice of the channel material.

Photo-Ultrasonic Study of Extrinsic Photoconductivity in N-Gallium Arsenide

Science.gov (United States)

Bradshaw, Randall Grant

We have measured the velocity of piezoelectrically -active, ultrasonic shear waves between 1.5 K and 68 K for undoped and for oxygen-doped n-type GaAs, during and after illumination at 4.2 K. The results reveal photoconductivity, persistent photoconductivity, and thermally stimulated conductivity. In both samples the Fermi level in the dark is controlled by excess non-shallow donors near 0.2 eV below the conduction band. Analysis of these effects in oxygen-doped material indicates that there are mid-gap and much shallower photoionizable levels and that there is an electron trap near 20 meV below the conduction band. The undoped n-GaAs sample exhibits photoconductivity quenching with photons in the range 0.95-1.26 eV which, by analysis of the quenching rate, is attributed to the EL2 defect. In addition, levels with large hole capture coefficients have been detected.

Electrical properties of gallium arsenide irradiated with electrons and neutrons

International Nuclear Information System (INIS)

Kol'chenko, T.I.; Lomako, V.M.

1975-01-01

A study was made of changes in the electrical properties of GaAs doped with Te, S, Se, Si, Ge, Sn (n 0 approximately 10 16 -10 18 cm -3 ) and irradiated either with 2.5-28 MeV electrons or with fast reactor neutrons. An analysis of changes in the electron density indicated that the rate of carrier removal by electron bombardment was independent of the dopant but was governed by isolated radiation defects. The change in the mobility due to irradiation with 2.5-10 MeV electrons was also governed by isolated defects. When the electron energy was increased to 28 MeV the main contribution to the change in the mobility was made by defect clusters. In the neutron-irradiation case the changes in the carrier density and mobility were mainly due to defect clusters and the nature of changes in the electrical properties was again independent of the dopant

Quasilinear quantum magnetoresistance in pressure-induced nonsymmorphic superconductor chromium arsenide.

Science.gov (United States)

Niu, Q; Yu, W C; Yip, K Y; Lim, Z L; Kotegawa, H; Matsuoka, E; Sugawara, H; Tou, H; Yanase, Y; Goh, Swee K

2017-06-05

In conventional metals, modification of electron trajectories under magnetic field gives rise to a magnetoresistance that varies quadratically at low field, followed by a saturation at high field for closed orbits on the Fermi surface. Deviations from the conventional behaviour, for example, the observation of a linear magnetoresistance, or a non-saturating magnetoresistance, have been attributed to exotic electron scattering mechanisms. Recently, linear magnetoresistance has been observed in many Dirac materials, in which the electron-electron correlation is relatively weak. The strongly correlated helimagnet CrAs undergoes a quantum phase transition to a nonmagnetic superconductor under pressure. Here we observe, near the magnetic instability, a large and non-saturating quasilinear magnetoresistance from the upper critical field to 14 T at low temperatures. We show that the quasilinear magnetoresistance may arise from an intricate interplay between a nontrivial band crossing protected by nonsymmorphic crystal symmetry and strong magnetic fluctuations.

Development of III-Sb Quantum Dot Systems for High Efficiency Intermediate Band Solar Cells

Energy Technology Data Exchange (ETDEWEB)

Huffaker, Diana [Univ. of California, Los Angeles, CA (United States); Hubbard, Seth [Rochester Inst. of Technology, NY (United States); Norman, Andrew [National Renewable Energy Lab. (NREL), Golden, CO (United States)

2015-07-31

This project aimed to develop solar cells that can help reduce cost per watt. This work focused on developing solar cells that utilize quantum dot (QD) nanomaterials to provide multijunction solar cell efficiency at the cost of single junction solar cell. We focused on a novel concept known as intermediate band solar cells (IBSC) where an additional energy band is inserted in a single solar cell to accommodate sub-bandgap photons absorption which otherwise are lost through transmission. The additional energy band can be achieved by growing QDs within a solar cell p-n junction. Though numerous studies have been conducted to develop such QD systems, very small improvements in solar energy conversion efficiency have been reported. This is mainly due to non-optimal material parameters such as band gap, band offset etc. In this work, we identified and developed a novel QD material system that meets the requirements of IBSC more closely than the current state-of-the-art technology. To achieve these goals, we focused on three important areas of solar cell design: band structure calculations of new materials, efficient device design for high efficiency, and development of new semiconductor materials. In this project, we focused on III-Sb materials as they possess a wide range of energy bandgaps from 0.2 eV to 2eV. Despite the difficulty involved in realizing these materials, we were successfully developed these materials through a systematic approach. Materials studied in this work are AlAsSb (Aluminum Arsenide Antimonide), InAlAs (Indium Aluminum Arsenide) and InAs (Indium Arsenide). InAs was used to develop QD layers within AlAsSb and InAlAs p-n junctions. As the QDs have very small volume, up to 30 QD layers been inserted into the p-n junction to enhance light absorption. These QD multi-stack devices helped in understanding the challenges associated with the development of quantum dot solar cells. The results from this work show that the quantum dot solar cells indeed

III - V semiconductor structures for biosensor and molecular electronics applications

Energy Technology Data Exchange (ETDEWEB)

Luber, S M

2007-01-15

The present work reports on the employment of III-V semiconductor structures to biosensor and molecular electronics applications. In the first part a sensor based on a surface-near two dimensional electron gas for a use in biological environment is studied. Such a two dimensional electron gas inherently forms in a molecular beam epitaxy (MBE) grown, doped aluminum gallium arsenide - gallium arsenide (AlGaAs-GaAs) heterostructure. Due to the intrinsic instability of GaAs in aqueous solutions the device is passivated by deposition of a monolayer of 4'-substituted mercaptobiphenyl molecules. The influence of these molecules which bind to the GaAs via a sulfur group is investigated by Kelvin probe measurements in air. They reveal a dependence of GaAs electron affinity on the intrinsic molecular dipole moment of the mercaptobiphenyls. Furthermore, transient surface photovoltage measurements are presented which demonstrate an additional influence of mercaptobiphenyl chemisorption on surface carrier recombination rates. As a next step, the influence of pH-value and salt concentration upon the sensor device is discussed based on the results obtained from sensor conductance measurements in physiological solutions. A dependence of the device surface potential on both parameters due to surface charging is deduced. Model calculations applying Poisson-Boltzmann theory reveal as possible surface charging mechanisms either the adsorption of OH- ions on the surface, or the dissociation of OH groups in surface oxides. A comparison between simulation settings and physical device properties indicate the OH- adsorption as the most probable mechanism. In the second part of the present study the suitability of MBE grown III-V semiconductor structures for molecular electronics applications is examined. In doing so, a method to fabricate nanometer separated, coplanar, metallic electrodes based on the cleavage of a supporting AlGaAs-GaAs heterostructure is presented. This is followed by a

III - V semiconductor structures for biosensor and molecular electronics applications

Energy Technology Data Exchange (ETDEWEB)

Luber, S.M.

2007-01-15

The present work reports on the employment of III-V semiconductor structures to biosensor and molecular electronics applications. In the first part a sensor based on a surface-near two dimensional electron gas for a use in biological environment is studied. Such a two dimensional electron gas inherently forms in a molecular beam epitaxy (MBE) grown, doped aluminum gallium arsenide - gallium arsenide (AlGaAs-GaAs) heterostructure. Due to the intrinsic instability of GaAs in aqueous solutions the device is passivated by deposition of a monolayer of 4'-substituted mercaptobiphenyl molecules. The influence of these molecules which bind to the GaAs via a sulfur group is investigated by Kelvin probe measurements in air. They reveal a dependence of GaAs electron affinity on the intrinsic molecular dipole moment of the mercaptobiphenyls. Furthermore, transient surface photovoltage measurements are presented which demonstrate an additional influence of mercaptobiphenyl chemisorption on surface carrier recombination rates. As a next step, the influence of pH-value and salt concentration upon the sensor device is discussed based on the results obtained from sensor conductance measurements in physiological solutions. A dependence of the device surface potential on both parameters due to surface charging is deduced. Model calculations applying Poisson-Boltzmann theory reveal as possible surface charging mechanisms either the adsorption of OH- ions on the surface, or the dissociation of OH groups in surface oxides. A comparison between simulation settings and physical device properties indicate the OH- adsorption as the most probable mechanism. In the second part of the present study the suitability of MBE grown III-V semiconductor structures for molecular electronics applications is examined. In doing so, a method to fabricate nanometer separated, coplanar, metallic electrodes based on the cleavage of a supporting AlGaAs-GaAs heterostructure is presented. This is followed

Fermi Surface with Dirac Fermions in CaFeAsF Determined via Quantum Oscillation Measurements

Science.gov (United States)

Terashima, Taichi; Hirose, Hishiro T.; Graf, David; Ma, Yonghui; Mu, Gang; Hu, Tao; Suzuki, Katsuhiro; Uji, Shinya; Ikeda, Hiroaki

2018-02-01

Despite the fact that 1111-type iron arsenides hold the record transition temperature of iron-based superconductors, their electronic structures have not been studied much because of the lack of high-quality single crystals. In this study, we comprehensively determine the Fermi surface in the antiferromagnetic state of CaFeAsF, a 1111 iron-arsenide parent compound, by performing quantum oscillation measurements and band-structure calculations. The determined Fermi surface consists of a symmetry-related pair of Dirac electron cylinders and a normal hole cylinder. From analyses of quantum-oscillation phases, we demonstrate that the electron cylinders carry a nontrivial Berry phase π . The carrier density is of the order of 10-3 per Fe. This unusual metallic state with the extremely small carrier density is a consequence of the previously discussed topological feature of the band structure which prevents the antiferromagnetic gap from being a full gap. We also report a nearly linear-in-B magnetoresistance and an anomalous resistivity increase above about 30 T for B ∥c , the latter of which is likely related to the quantum limit of the electron orbit. Intriguingly, the electrical resistivity exhibits a nonmetallic temperature dependence in the paramagnetic tetragonal phase (T >118 K ), which may suggest an incoherent state. Our study provides a detailed knowledge of the Fermi surface in the antiferromagnetic state of 1111 parent compounds and moreover opens up a new possibility to explore Dirac-fermion physics in those compounds.

Fermi Surface with Dirac Fermions in CaFeAsF Determined via Quantum Oscillation Measurements

Directory of Open Access Journals (Sweden)

Taichi Terashima

2018-02-01

Full Text Available Despite the fact that 1111-type iron arsenides hold the record transition temperature of iron-based superconductors, their electronic structures have not been studied much because of the lack of high-quality single crystals. In this study, we comprehensively determine the Fermi surface in the antiferromagnetic state of CaFeAsF, a 1111 iron-arsenide parent compound, by performing quantum oscillation measurements and band-structure calculations. The determined Fermi surface consists of a symmetry-related pair of Dirac electron cylinders and a normal hole cylinder. From analyses of quantum-oscillation phases, we demonstrate that the electron cylinders carry a nontrivial Berry phase π. The carrier density is of the order of 10^{-3} per Fe. This unusual metallic state with the extremely small carrier density is a consequence of the previously discussed topological feature of the band structure which prevents the antiferromagnetic gap from being a full gap. We also report a nearly linear-in-B magnetoresistance and an anomalous resistivity increase above about 30 T for B∥c, the latter of which is likely related to the quantum limit of the electron orbit. Intriguingly, the electrical resistivity exhibits a nonmetallic temperature dependence in the paramagnetic tetragonal phase (T>118  K, which may suggest an incoherent state. Our study provides a detailed knowledge of the Fermi surface in the antiferromagnetic state of 1111 parent compounds and moreover opens up a new possibility to explore Dirac-fermion physics in those compounds.

Voltage adjusting characteristics in terahertz transmission through Fabry-Pérot-based metamaterials

Directory of Open Access Journals (Sweden)

Jun Luo

2015-10-01

Full Text Available Metallic electric split-ring resonators (SRRs with featured size in micrometer scale, which are connected by thin metal wires, are patterned to form a periodically distributed planar array. The arrayed metallic SRRs are fabricated on an n-doped gallium arsenide (n-GaAs layer grown directly over a semi-insulating gallium arsenide (SI-GaAs wafer. The patterned metal microstructures and n-GaAs layer construct a Schottky diode, which can support an external voltage applied to modify the device properties. The developed architectures present typical functional metamaterial characters, and thus is proposed to reveal voltage adjusting characteristics in the transmission of terahertz waves at normal incidence. We also demonstrate the terahertz transmission characteristics of the voltage controlled Fabry-Pérot-based metamaterial device, which is composed of arrayed metallic SRRs. To date, many metamaterials developed in earlier works have been used to regulate the transmission amplitude or phase at specific frequencies in terahertz wavelength range, which are mainly dominated by the inductance-capacitance (LC resonance mechanism. However, in our work, the external voltage controlled metamaterial device is developed, and the extraordinary transmission regulation characteristics based on both the Fabry-Pérot (FP resonance and relatively weak surface plasmon polariton (SPP resonance in 0.025-1.5 THz range, are presented. Our research therefore shows a potential application of the dual-mode-resonance-based metamaterial for improving terahertz transmission regulation.

Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As

Czech Academy of Sciences Publication Activity Database

Mašek, Jan; Máca, František; Kudrnovský, Josef; Makarovský, O.; Eaves, L.; Campion, R. P.; Edmonds, K. W.; Rushforth, A.W.; Foxon, C. T.; Gallagher, B. L.; Novák, Vít; Sinova, Jairo; Jungwirth, Tomáš

2010-01-01

Roč. 105, č. 22 (2010), 227202/1-227202/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/07/0456; GA MŠk LC510; GA AV ČR KAN400100652 EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100520 Keywords : gallium arsenide * semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.621, year: 2010

Small-scale and large-scale testing of photo-electrochemically activated leaching technology in Aprelkovo and Delmachik Mines

Science.gov (United States)

Sekisov, AG; Lavrov, AYu; Rubtsov, YuI

2017-02-01

The paper gives a description of tests and trials of the technology of heap gold leaching from rebellious ore in Aprelkovo and Delmachik Mines. Efficiency of leaching flowsheets with the stage-wise use of activated solutions of different reagents, including active forms of oxygen, is evaluated. Carbonate-peroxide solutions are used at the first stage of leaching to oxidize sulfide and sulfide-arsenide ore minerals to recover iron and copper from them. The second stage leaching uses active cyanide solutions to leach encapsulated and disperse gold and silver.

Electric field and space-charge distribution in SI GaAs: effect of high-energy proton irradiation

CERN Document Server

Castaldini, A; Polenta, L; Canali, C; Nava, F

1999-01-01

The effect of irradiation on semi-insulating gallium arsenide Schottky diodes has been investigated by means of surface potential measurements and spectroscopic techniques. Before and after irradiation the electric field exhibits a Mott barrier-like distribution, and the box-shaped space charge modifies its distribution with irradiation. The increase in density or the generation of some traps changes the compensation ratio producing a deeper active region and a more homogeneous distribution of the electric field. The latter phenomenon is also observed by EBIC images of edge-mounted diodes.

The semiconductor doping with radiation defects via proton and alpha-particle irradiation. Review

CERN Document Server

Kozlov, V A

2001-01-01

Paper presents an analytical review devoted to semiconductor doping with radiation defects resulted from irradiation by light ions, in particular, by protons and alpha-particles. One studies formation of radiation defects in silicon, gallium arsenide and indium phosphide under light ion irradiation. One analyzes effect of proton and alpha-particle irradiation on electric conductivity of the above-listed semiconducting materials. Semiconductor doping with radiation defects under light ion irradiation enables to control their electrophysical properties and to design high-speed opto-, micro- and nanoelectronic devices on their basis

Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching

DEFF Research Database (Denmark)

Kallesoe, C.; Mølhave, Kristian; Larsen, K. F.

2010-01-01

Epitaxial growth of heterostructure nanowires allows for the definition of narrow sections with specific semiconductor composition. The authors demonstrate how postgrowth engineering of III-V heterostructure nanowires using selective etching can form gaps, sharpening of tips, and thin sections...... lithography is used for deposition of catalyst particles on trench sidewalls and the lateral growth of III-V nanowires is achieved from such catalysts. The selectivity of a bromine-based etch on gallium arsenide segments in gallium phosphide nanowires is examined, using a hydrochloride etch to remove the III...

Diffusion length variation and proton damage coefficients for InP/In(x)Ga(1-x)As/GaAs solar cells

Science.gov (United States)

Jain, R. K.; Weinberg, I.; Flood, D. J.

1993-01-01

Indium phosphide solar cells are more radiation resistant than gallium arsenide and silicon solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of lighter, mechanically strong and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5 and 3 MeV proton irradiations are explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence is calculated by simulating the cell performance. The diffusion length damage coefficient K(L) is plotted as a function of proton fluence.

Intact mammalian cell function on semi-conductor nanowire arrays: new perspectives for cell-based biosensing

DEFF Research Database (Denmark)

Berthing, Trine; Bonde, Sara; Sørensen, Claus Birger

2011-01-01

. A selection of critical cell functions and pathways are shown not to be impaired, including cell adhesion, membrane integrity, intracellular enzyme activity, DNA uptake, cytosolic and membrane protein expression, and the neuronal maturation pathway. The results demonstrate the low invasiveness of InAs NW......Nanowires (NWs) are attracting more and more interest due to their potential cellular applications, such as delivery of compounds or sensing platforms. Arrays of vertical indium-arsenide (InAs) NWs are interfaced with human embryonic kidney cells and rat embryonic dorsal root ganglion neurons...

Possible power source found for fiber optic lasers

International Nuclear Information System (INIS)

Krupa, Tyler J.

2000-01-01

Scientists at the US Department of Energy's Sandia National Laboratory are researching ways to use a new semiconductor alloy, indium gallium arsenide nitride (InGaAsN), as as photovoltaic power source for lasers in fiber optics and space communication satellites. The efficiency of electricity-generating solar cells utilizing InGaAsN is predicted to be 40%-nearly twice the efficiency rate of a standard silicon solar cell. The use of InGaAsN in solar cells is a potential power source for satellites and other space systems. (AIP) (c)

Errors in short circuit measurements due to spectral mismatch between sunlight and solar simulators

Science.gov (United States)

Curtis, H. B.

1976-01-01

Errors in short circuit current measurement were calculated for a variety of spectral mismatch conditions. The differences in spectral irradiance between terrestrial sunlight and three types of solar simulator were studied, as well as the differences in spectral response between three types of reference solar cells and various test cells. The simulators considered were a short arc xenon lamp AMO sunlight simulator, an ordinary quartz halogen lamp, and an ELH-type quartz halogen lamp. Three types of solar cells studied were a silicon cell, a cadmium sulfide cell and a gallium arsenide cell.

Plating on difficult-to-plate metals: what's new

International Nuclear Information System (INIS)

Wiesner, H.J.

1980-01-01

Some of the changes since 1970 in procedures for plating on such materials as titanium, molybdenum, silicon, aluminum, and gallium arsenide are summarized. While basic procedures for plating some of these materials were developed as many as 30 to 40 years ago, changes in the end uses of the plated products have necessitated new plating processes. In some cases, vacuum techniques - such as ion bombardment, ion implantation, and vacuum metallization - have been introduced to improve the adhesion of electrodeposits. In other cases, these techniques have been used to deposit materials upon which electrodeposits are required

Measurements of electrophysical characteristics of semiconductor structures with the use of microwave photonic crystals

Energy Technology Data Exchange (ETDEWEB)

Usanov, D. A., E-mail: UsanovDA@info.sgu.ru [Chernyshevsky National Research State University (Russian Federation); Nikitov, S. A. [Russian Academy of Sciences, Kotelnikov Institute of Radio Engineering and Electronics (Russian Federation); Skripal, A. V.; Ponomarev, D. V.; Latysheva, E. V. [Chernyshevsky National Research State University (Russian Federation)

2016-12-15

A method is proposed for the measurement of the electrophysical characteristics of semiconductor structures: the electrical conductivity of the n layer, which plays the role of substrate for a semiconductor structure, and the thickness and electrical conductivity of the strongly doped epitaxial n{sup +} layer. The method is based on the use of a one-dimensional microwave photonic crystal with a violation of periodicity containing the semiconductor structure under investigation. The characteristics of epitaxial gallium-arsenide structures consisting of an epitaxial layer and the semi-insulating substrate measured by this method are presented.

Photovoltaic energy technologies: Health and environmental effects document

Science.gov (United States)

Moskowitz, P. D.; Hamilton, L. D.; Morris, S. C.; Rowe, M. D.

1980-09-01

The potential health and environmental consequences of producing electricity by photovoltaic energy systems was analyzed. Potential health and environmental risks are identified in representative fuel and material supply cycles including extraction, processing, refining, fabrication, installation, operation, and isposal for four photovoltaic energy systems (silicon N/P single crystal, silicon metal/insulator/semiconductor (MIS) cell, cadmium sulfide/copper sulfide backwall cell, and gallium arsenide heterojunction cell) delivering equal amounts of useful energy. Each step of the fuel and material supply cycles, materials demands, byproducts, public health, occupational health, and environmental hazards is identified.

Studies of the phase transitions in UAs with neutron scattering

International Nuclear Information System (INIS)

Sinha, S.K.; Lander, G.H.; Shapiro, S.M.; Vogt, O.

1980-01-01

Uranium arsenide is known to order with the type-I antiferromagnetic (AF) structure at approx. 126 K, and exhibit a first-order transition to the type-IA AF structure at T/sub N//2. We have now reexamined these transitions with a single crystal. Above T/sub N/ UAs exhibits critical scattering suggesting a tendency to order with an incommensurate wavevector, but then suddenly orders with the AF-I structure. The analysis of the data shows the need to consider anisotropic exchange interactions of cubic symmetry between U moments

Research of the voltage and current stabilization processes by using the silicon field-effect transistor

International Nuclear Information System (INIS)

Karimov, A.V.; Yodgorova, D.M.; Kamanov, B.M.; Giyasova, F.A.; Yakudov, A.A.

2012-01-01

The silicon field-effect transistors were investigated to use in circuits for stabilization of current and voltage. As in gallium arsenide field-effect transistors, in silicon field-effect transistors with p-n-junction a new mechanism of saturation of the drain current is experimentally found out due to both transverse and longitudinal compression of channel by additional resistance between the source and the gate of the transistor. The criteria for evaluating the coefficients of stabilization of transient current suppressors and voltage stabilizator based on the field-effect transistor are considered. (authors)

Proceedings of the ninth symposium on thermophysical properties: special symposium Issue 5

International Nuclear Information System (INIS)

Anon.

1986-01-01

Among the topics discussed in this volume of the symposium are: the establishment of accuracy limits and standards for comparative thermal conductivity measurements; thermal conductivity and electrical resistivity of cadmium arsenide in the temperature range 4.2-40 K; suggestions regarding thermal diffusivity measurements on pyrolytic graphite and pyrolytic boron nitride by the laser pulse method; experimental study of the viscosity of lithium vapor at high temperatures and pressures; transport coefficients of fluid mixtures; an equation of state for isobutane-isopentane mixtures with corrections for impurities, and the importance of thermophysical data in process simulation

High thermal conductivity materials for thermal management applications

Science.gov (United States)

Broido, David A.; Reinecke, Thomas L.; Lindsay, Lucas R.

2018-05-29

High thermal conductivity materials and methods of their use for thermal management applications are provided. In some embodiments, a device comprises a heat generating unit (304) and a thermally conductive unit (306, 308, 310) in thermal communication with the heat generating unit (304) for conducting heat generated by the heat generating unit (304) away from the heat generating unit (304), the thermally conductive unit (306, 308, 310) comprising a thermally conductive compound, alloy or composite thereof. The thermally conductive compound may include Boron Arsenide, Boron Antimonide, Germanium Carbide and Beryllium Selenide.

Transuranium Processing Plant semiannual report of production, status, and plans for period ending June 30, 1975

Energy Technology Data Exchange (ETDEWEB)

King, L.J.; Bigelow, J.E.; Collins, E.D.

1976-03-01

During the period January 1, 1975, through June 30, 1975, the following amounts of transuranium elements were recovered from 22 irradiated HFIR targets: 2g /sup 243/Am, 59 g /sup 244/Cm, 51 mg /sup 249/Bk, 465 mg /sup 252/Cf, 2.5 mg /sup 253/Es, and 1.4 pg /sup 257/Fm. In addition, 45 mg of high-purity /sup 248/Cm was operated from /sup 252/Cf which had been recovered and purified during earlier periods, and 56 mg of a lower-quality /sup 248/Cm was separated from californium purification rework solutions. Five HFIR targets, each containing approximately 9 g of actinides (predominantly curium), were fabricated. A new long-term projection showed that /sup 252/Cf production in the TRU-HFIR complex could increase to as much as 2.5 g/year. During the next 18 months, we expect to recover totals of 46 mg of /sup 249/Bk, 520 mg of /sup 252/Cf, 2.0 mg of /sup 253/Es (in a mixture of isotopes), 220 ..mu..g of high-purity /sup 253/Es, and 1.6 pg of /sup 257/Fm. We also expect to obtain 125 mg of high-purity /sup 248/Cm from purified californium now in storage. There are no plans to process any of the remaining SRP Pu-Al tubes or to irradiate any plutonium targets in the HFIR; thus, we do not expect to recover any /sup 244/Pu. No changes were made in the chemical processing flowsheets normally used at TRU. Two neutron sources were fabricated, bringing the total fabricated to 77. In special projects, we (1) produced about 1 mg of /sup 250/Cf by irradiation of /sup 249/Bk in HFIR rabbits, and (2) processed some irradiated /sup 248/Cm samples and obtained yield and isotopic composition data for use in determining the capture cross section of /sup 249/Cm in the HFIR. The values that are currently being used for transuranium element decay data and for cross-section data in planning irradiation-processing cycles, calculating production forecasts, and assaying products are tabulated in the Appendix.

Microscopic nature of inhomogeneous line broadening: Analysis of the excitation-line-narrowing spectra of Cf4+ in CeF4

International Nuclear Information System (INIS)

Liu, G.K.; Huang, J.; Beitz, J.V.

1993-01-01

Optical transitions between 5f states of tetravalent californium ion doped (1 metal-atom %) into CeF 4 exhibit unusually large inhomogeneous broadening. The nature of the inhomogeneous broadening in this system has been studied by using fluorescence line narrowing and excitation line narrowing (ELN). It is shown that the energy distributions of different electronic states of Cf 4+ in this system are correlated. In the ELN experiments, reduced excitation linewidth was obtained when selectively monitoring fluorescence emission. A linear relation was observed between the excitation energies of crystal-field states of the 5 G 4' manifold and the fluorescence wavelength monitored across the inhomogeneous profile of a 5 G 6' -- 7 F 6' transition. Analysis of these results by means of a microscopic theory proposed by Laird and Skinner [J. Chem. Phys. 90, 3880 (1989)] has provided insights into the structural properties of this disordered system

Chelation and stabilization of berkelium in oxidation state +IV

Science.gov (United States)

Deblonde, Gauthier J.-P.; Sturzbecher-Hoehne, Manuel; Rupert, Peter B.; An, Dahlia D.; Illy, Marie-Claire; Ralston, Corie Y.; Brabec, Jiri; de Jong, Wibe A.; Strong, Roland K.; Abergel, Rebecca J.

2017-09-01

Berkelium (Bk) has been predicted to be the only transplutonium element able to exhibit both +III and +IV oxidation states in solution, but evidence of a stable oxidized Bk chelate has so far remained elusive. Here we describe the stabilization of the heaviest 4+ ion of the periodic table, under mild aqueous conditions, using a siderophore derivative. The resulting Bk(IV) complex exhibits luminescence via sensitization through an intramolecular antenna effect. This neutral Bk(IV) coordination compound is not sequestered by the protein siderocalin—a mammalian metal transporter—in contrast to the negatively charged species obtained with neighbouring trivalent actinides americium, curium and californium (Cf). The corresponding Cf(III)-ligand-protein ternary adduct was characterized by X-ray diffraction analysis. Combined with theoretical predictions, these data add significant insight to the field of transplutonium chemistry, and may lead to innovative Bk separation and purification processes.

Operation manual for the INEL on-line mass-separator facility

International Nuclear Information System (INIS)

Anderl, R.A.

1984-06-01

This report is an operation manual for an on-line mass-separator facility which is located in Building 661 at the Test Reactor Area of the Idaho National Engineering Laboratory. The facility provides mass-separated sources of short-lived fission-product radionuclides whose decay properties can be studied using a variety of nuclear spectroscopic techniques. This facility is unique in that it utilizes the gas-jet technique to transport fission products from a 252 Cf source located in a hot cell to the ion source of the mass separator. This document includes the following: (a) a detailed description of the facility, (b) identification of equipment hazards and safety controls, (c) detailed operating procedures for startup, continuous operation and shutdown, (d) operating procedures for the californium hot cell, and (e) an operator's manual for the automated moving tape collector/data acquisition system. 7 references, 16 figures, 8 tables

Measurements of the neutron capture cross sections and incineration potentials of minor-actinides in high thermal neutron fluxes: Impact on the transmutation of nuclear wastes; Mesures des sections efficaces de capture et potentiels d'incineration des actinides mineurs dans les hauts flux de neutrons: Impact sur la transmutation des dechets

Energy Technology Data Exchange (ETDEWEB)

Bringer, O

2007-10-15

This thesis comes within the framework of minor-actinide nuclear transmutation studies. First of all, we have evaluated the impact of minor actinide nuclear data uncertainties within the cases of {sup 241}Am and {sup 237}Np incineration in three different reactor spectra: EFR (fast), GT-MHR (epithermal) and HI-HWR (thermal). The nuclear parameters which give the highest uncertainties were thus highlighted. As a result of fact, we have tried to reduce data uncertainties, in the thermal energy region, for one part of them through experimental campaigns in the moderated high intensity neutron fluxes of ILL reactor (Grenoble). These measurements were focused onto the incineration and transmutation of the americium-241, the curium-244 and the californium-249 isotopes. Finally, the values of 12 different cross sections and the {sup 241}Am isomeric branching ratio were precisely measured at thermal energy point. (author)

Operational safety at the radiometallurgy laboratory of Fontenay-aux-Roses

International Nuclear Information System (INIS)

Hayet, Lucien; Petit, Pierre; Conche, Roger.

1976-01-01

Opened in 1967, the Radiometallurgy Laboratory is responsible for the examination of plutonium 239 based nuclear fuels of breeder reactors such as Rapsodie and Phenix. Part of the same laboratory is also responsible for the manufacture of californium 252 sources. These neutron sources can have a neutron fluency yield of 2,3 10 10 n/s/4π (i.e. 10mg of 252cf). This large laboratory includes a total area of 117m 2 of hot surfaces. It also includes 14 high activity cells with a capacity of 100000Ci at 1MeV. Located only 7km from the center of Paris, it must incorporate a special design and a particularly sure safety policy. Several statistics are given: irradiations, contaminations, incidents, quantity of fissile material, solid and liquid wastes etc... The principles of safety management are outlined and an analysis given of this basic nuclear facility [fr

Multiplicity and correlated energy of gamma rays emitted in the spontaneous fission of Californium-252

International Nuclear Information System (INIS)

Brunson, G.S. Jr.

1982-06-01

An array of eight high-speed plastic scintillation detectors has been used to infer a mathematical model for the emission multipliciy of prompt gammas in the spontaneous fission of 252 Cf. Exceptional time resolution and coincidence capability permitted the separation of gammas from fast neutrons over a flight path of approximately 10 cm. About 20 different distribution models were tested. The average energy of the prompt gammas is inversely related to the number emitted; however, this inverse relationship is not strong and the total gamma energy does increase with increasing gamma number. An extension of the experiment incorporated a lithium-drifted germanium gamma spectrometer that resolved nearly 100 discrete gammas associated with fission. Of these gammas, some were preferentially associated with fission in which few gammas were emitted. Certain others were more frequent when many gammas were emitted. Results are presented

Remarkably High Stability of Late Actinide Dioxide Cations: Extending Chemistry to Pentavalent Berkelium and Californium.

Science.gov (United States)

Dau, Phuong D; Vasiliu, Monica; Peterson, Kirk A; Dixon, David A; Gibson, John K

2017-12-06

Actinyl chemistry is extended beyond Cm to BkO 2 + and CfO 2 + through transfer of an O atom from NO 2 to BkO + or CfO + , establishing a surprisingly high lower limit of 73 kcal mol -1 for the dissociation energies, D[O-(BkO + )] and D[O-(CfO + )]. CCSD(T) computations are in accord with the observed reactions, and characterize the newly observed dioxide ions as linear pentavalent actinyls; these being the first Bk and Cf species with oxidation states above IV. Computations of actinide dioxide cations AnO 2 + for An=Pa to Lr reveal an unexpected minimum for D[O-(CmO + )]. For CmO 2 + , and AnO 2 + beyond EsO 2 + , the most stable structure has side-on bonded η 2 -(O 2 ), as An III peroxides for An=Cm and Lr, and as An II superoxides for An=Fm, Md, and No. It is predicted that the most stable structure of EsO 2 + is linear [O=Es V =O] + , einsteinyl, and that FmO 2 + and MdO 2 + , like CmO 2 + , also have actinyl(V) structures as local energy minima. The results expand actinide oxidation state chemistry, the realm of the distinctive actinyl moiety, and the non-periodic character towards the end of the periodic table. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Neutron Protection Factor Determination and Validation for a Vehicle Surrogate Using a Californium Fission Source

Science.gov (United States)

2017-06-01

study the laws governing shock wave propagation, and evaluate the suitability of military operations after being subjected to their use. During...14]. MCNP6.1 then outputs a dose spectrum, instead of the standard fluence spectrum created from the “ f4 ” tally [14]. In order to produce the dose...manually, an unmodified fluence tally ( f4 ) was exported externally to a spreadsheet. The energy bins were summed and grouped to mimic the energy bin

Study on the occurrence of platinum in Xinjie Cu-Ni sulfide deposits by a combination of SPM and NAA

International Nuclear Information System (INIS)

Li Xiaolin; Zhu Jieqing; Lu Rongrong; Gu Yingmei; Wu Xiankang; Chen Youhong

1997-01-01

A combination of neutron-activation analysis (NAA) and scanning proton microprobe (SPM) was used to study the distribution of platinum-group elements (PGEs) in rocks and ores from Xinjie Cu-Ni deposit. The minimum detection limits of PGEs by NAA had been much improved by means of a nickel-sulfide fire-assay technique for pre-concentration of PGEs in the ore samples. A simple and effective method was developed for true element mapping in SPM experiments. A pair of moveable absorption filters was set up in the target chamber for high sensitivities of both major and trace elements. The bulk analysis results by NNA indicated that the PGE mineralization occurred at the base of Xinjie layered intrusion in clino-pyroxenite rocks and the Cu-Ni sulfide minerals disseminated within the rocks had high abundance level of PGEs. However, the micro-PIXE analysis of the Cu-Ni sulfide mineral grains did not find PGEs above the MDL of (6-9) x 10 -6 for Rh, Ru and Pd, and 6- x 10 -6 for Pt. The search for platinum occurrence in sulfide minerals was followed by scanning analysis of SPM when some smaller platinum enriched grains were found in the sulfide minerals. The microscopic analysis results suggested that platinum occurred in the Cu-Ni sulfide matrix as independent arsenide mineral grains. The chemical formula of the arsenide sperrylite was PtAs2. The information of the platinum occurrence was helpful to future mineralogical research and mineral processing and beneficiation of the Cu-Ni deposit

Study on the occurrence of platinum in Xinjie CuNi sulfide deposits by a combination of SPM and NAA

Science.gov (United States)

Li, Xiaolin; Zhu, Jieqing; Lu, Rongrong; Gu, Yingmei; Wu, Xiankang; Chen, Youhong

1997-07-01

A combination of neutron-activation analysis (NAA) and scanning proton microprobe (SPM) was used to study the distribution of platinum-group elements (PGEs) in rocks and ores from Xinjie CuNi deposit. The minimum detection limits of PGEs by NAA had been much improved by means of a nickel-sulfide fire-assay technique for pre-concentration of PGEs in the ore samples. A simple and effective method was developed for true element mapping in SPM experiments. A pair of moveable absorption filters was set up in the target chamber for high sensitivities of both major and trace elements. The bulk analysis results by NNA indicated that the PGE mineralization occurred at the base of Xinjie layered intrusion in clinopyroxenite rocks and the CuNi sulfide minerals disseminated within the rocks had high abundance level of PGEs. However, the micro-PIXE analysis of the CuNi sulfide mineral grains did not find PGEs above the MDL of 6-9 ppm for Rh, Ru and Pd, and 60 ppm for Pt. The search for platinum occurrence in sulfide minerals was followed by scanning analysis of SPM when some smaller platinum enriched grains were found in the sulfide minerals. The microscopic analysis results suggested that platinum occurred in the CuNi sulfide matrix as independent arsenide mineral grains. The chemical formula of the arsenide sperrylite was PtAs 2. The information of the platinum occurrence was helpful to future mineralogical research and mineral processing and beneficiation of the CuNi deposit.

Observed damage during Argon gas cluster depth profiles of compound semiconductors

Energy Technology Data Exchange (ETDEWEB)

Barlow, Anders J., E-mail: anders.barlow@ncl.ac.uk; Portoles, Jose F.; Cumpson, Peter J. [National EPSRC XPS Users' Service (NEXUS), School of Mechanical and Systems Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom)

2014-08-07

Argon Gas Cluster Ion Beam (GCIB) sources have become very popular in XPS and SIMS in recent years, due to the minimal chemical damage they introduce in the depth-profiling of polymer and other organic materials. These GCIB sources are therefore particularly useful for depth-profiling polymer and organic materials, but also (though more slowly) the surfaces of inorganic materials such as semiconductors, due to the lower roughness expected in cluster ion sputtering compared to that introduced by monatomic ions. We have examined experimentally a set of five compound semiconductors, cadmium telluride (CdTe), gallium arsenide (GaAs), gallium phosphide (GaP), indium arsenide (InAs), and zinc selenide (ZnSe) and a high-κ dielectric material, hafnium oxide (HfO), in their response to argon cluster profiling. An experimentally determined HfO etch rate of 0.025 nm/min (3.95 × 10{sup −2} amu/atom in ion) for 6 keV Ar gas clusters is used in the depth scale conversion for the profiles of the semiconductor materials. The assumption has been that, since the damage introduced into polymer materials is low, even though sputter yields are high, then there is little likelihood of damaging inorganic materials at all with cluster ions. This seems true in most cases; however, in this work, we report for the first time that this damage can in fact be very significant in the case of InAs, causing the formation of metallic indium that is readily visible even to the naked eye.

The state of the art of thin-film photovoltaics

International Nuclear Information System (INIS)

Surek, T.

1993-10-01

Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future

Site control technique for quantum dots using electron beam induced deposition

Energy Technology Data Exchange (ETDEWEB)

Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi [Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Minami-saitama, Saitama 3458501 (Japan)

2014-05-15

To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement.

Site control technique for quantum dots using electron beam induced deposition

International Nuclear Information System (INIS)

Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi

2014-01-01

To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement

Absence of phase-dependent noise in time-domain reflectivity studies of impulsively excited phonons

KAUST Repository

Hussain, A.

2010-06-17

There have been several reports of phase-dependent noise in time-domain reflectivity studies of optical phonons excited by femtosecond laser pulses in semiconductors, semimetals, and superconductors. It was suggested that such behavior is associated with the creation of squeezed phonon states although there is no theoretical model that directly supports such a proposal. We have experimentally re-examined the studies of phonons in bismuth and gallium arsenide, and find no evidence of any phase-dependent noise signature associated with the phonons. We place an upper limit on any such noise at least 40–50 dB lower than previously reported.

Detection and study of photo-generated spin currents in nonmagnetic semiconductor materials

International Nuclear Information System (INIS)

Miah, M. Idrish; Kityk, I.V.; Gray, E. MacA.

2007-01-01

The longitudinal current in Si-doped gallium arsenide was spin-polarized using circularly polarized light. The spin current was detected by the extraordinary Hall effect. An enhancement of Hall conductivity with increasing moderately Si-doping was found, indicating that the introduction of dopants increases the electronic spin polarization. This finding may provide an opportunity for controlling and manipulating nonmagnetic semiconductors via electron spin for operating device applications. Band energy calculations using pseudopotentials confirm the influence of Si content and electron-phonon interaction on the behaviour of the spin current and hence on the spin-dependent Hall voltage

Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells

Science.gov (United States)

Jain, Raj K.; Weinberg, Irving; Flood, Dennis J.

1993-01-01

Indium phosphide (InP) solar cells are more radiation resistant than gallium arsenide (GaAs) and silicon (Si) solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of light weight, mechanically strong, and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5- and 3-MeV proton irradiations have been explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence was calculated by simulating the cell performance. The diffusion length damage coefficient, K(sub L), was also plotted as a function of proton fluence.

Precision density measuring equipment: Design, selected examples

International Nuclear Information System (INIS)

Karasinski, T.; Patzelt, K.; Dieker, C.; Hansen, H.; Wenzl, H.; Schober, T.

1987-06-01

The report deals with solids density measurement using the pyknometer, the hydrostatic balance, or the floating specimen method. The mathematical relations are derived, and error sources are shown. A detailed description is given of a measuring set-up for measuring the density of solids and liquids. An error calculation is presented. After explaining the determination of density of a standard solid body, the report describes the density measurement of monocrystalline germanium, of niobium-tritide, Ni 3 Al, Ge-Si, and gallium arsenide, the determination of space-lattice expansion by hydrogen isotopes, and of the purity of H-D mixtures. (GG) [de

An EXAFS spectrometer on beam line 10B at the Photon Factory

International Nuclear Information System (INIS)

Oyanagi, Hiroyuki; Matsushita, Tadashi; Ito, Masahisa; Kuroda, Haruo.

1984-03-01

An EXAFS spectrometer installed on the beam line 10B at the Photon Factory is designed to cover the photon energy between 4 and 30 keV. Utilizing either a channel-cut or two flat silicon crystals as a monochromator, a beam intensity between 10 8 and 10 9 photons/sec is obtained at 9 keV with a resolution of 1 eV. The performance of the spectrometer, such as a signal-to-noise ratio or an energy resolution is demonstrated with examples of K edge absorption spectra of bromine, germanium, gallium arsenide, and zinc selenide. (author)

Inherent polarization entanglement generated from a monolithic semiconductor chip

DEFF Research Database (Denmark)

Horn, Rolf T.; Kolenderski, Piotr; Kang, Dongpeng

2013-01-01

Creating miniature chip scale implementations of optical quantum information protocols is a dream for many in the quantum optics community. This is largely because of the promise of stability and scalability. Here we present a monolithically integratable chip architecture upon which is built...... a photonic device primitive called a Bragg reflection waveguide (BRW). Implemented in gallium arsenide, we show that, via the process of spontaneous parametric down conversion, the BRW is capable of directly producing polarization entangled photons without additional path difference compensation, spectral...... as a serious contender on which to build large scale implementations of optical quantum processing devices....

The fractional quantum Hall effect goes organic

International Nuclear Information System (INIS)

Smet, Jurgen

2000-01-01

Physicists have been fascinated by the behaviour of two-dimensional electron gases for the past two decades. All of these experiments were performed on inorganic semiconductor devices, most of them based on gallium arsenide. Indeed, until recently it was thought that the subtle effects that arise due to electron-electron interactions in these devices required levels of purity that could not be achieved in other material systems. However, Hendrik Schoen, Christian Kloc and Bertram Batlogg of Bell Laboratories in the US have now observed the fractional quantum Hall effect - the most dramatic signature of electron-electron interactions - in two organic semiconductors. (U.K.)

Detection and study of photo-generated spin currents in nonmagnetic semiconductor materials

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au; Kityk, I.V. [Institute of Physics, J. Dlugosz University Czestochowa, PL-42201 Czestochowa (Poland); Gray, E. MacA. [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)

2007-10-15

The longitudinal current in Si-doped gallium arsenide was spin-polarized using circularly polarized light. The spin current was detected by the extraordinary Hall effect. An enhancement of Hall conductivity with increasing moderately Si-doping was found, indicating that the introduction of dopants increases the electronic spin polarization. This finding may provide an opportunity for controlling and manipulating nonmagnetic semiconductors via electron spin for operating device applications. Band energy calculations using pseudopotentials confirm the influence of Si content and electron-phonon interaction on the behaviour of the spin current and hence on the spin-dependent Hall voltage.

Cold electronics for the liquid argon hadronic end-cap calorimeter of ATLAS

International Nuclear Information System (INIS)

Ban, J.; Brettel, H.; Cwienk, W.D.; Fent, J.; Kurchaninov, L.; Ladygin, E.; Oberlack, H.; Schacht, P.; Stenzel, H.; Strizenec, P.

2006-01-01

This paper describes the on-detector electronics of the ATLAS hadronic end-cap calorimeter (HEC). The electronics is operated in liquid argon; therefore attention is paid to its performance at low temperatures. The core of the electronics are Gallium Arsenide (GaAs) preamplifiers. We present design, layout and results of various tests of the preamplifier chips and summing boards. The calibration and signal cables have been studied under laboratory conditions and the signal distortion is modeled. All parts of the electronics have been produced, tested and assembled on the calorimeter modules. The summary of the commissioning tests is presented

Magnetoelectric effect in a sandwich structure of gallium arsenide–nickel–tin–nickel

Science.gov (United States)

Galichyan, T. A.; Filippov, D. A.; Tihonov, A. A.; Laletin, V. M.; Firsova, T. O.; Manicheva, I. N.

2018-04-01

The results of investigation of the magnetoelectric effect in a nickel-tin-nickel sandwich structure obtained by galvanic deposition of gallium arsenide on a substrate are presented. The technology of constructing such structures is described and the experimental results of the frequency dependence of the effect are presented. It is shown that the use of tin as an intermediate layer reduces the mechanical stresses resulting from the incommensurability of the phases, which permits obtaining qualitative structures with the nickel thickness of about 70 μm. The resulting structures exhibit good adhesion between the layers and have a high quality factor.

Absence of phase-dependent noise in time-domain reflectivity studies of impulsively excited phonons

KAUST Repository

Hussain, A.; Andrews, S. R.

2010-01-01

There have been several reports of phase-dependent noise in time-domain reflectivity studies of optical phonons excited by femtosecond laser pulses in semiconductors, semimetals, and superconductors. It was suggested that such behavior is associated with the creation of squeezed phonon states although there is no theoretical model that directly supports such a proposal. We have experimentally re-examined the studies of phonons in bismuth and gallium arsenide, and find no evidence of any phase-dependent noise signature associated with the phonons. We place an upper limit on any such noise at least 40–50 dB lower than previously reported.

Study of the background noise in microwave GaAsFET devices

International Nuclear Information System (INIS)

Serrano S, A.

1984-01-01

One of the most important properties of the gallium arsenide field effect transistor is its low noise figure in the microwave frequency range (approx. 1 dB, 4 GHz). The applications of this device in components and systems in the high frequency range require analysis of background noise in terms of basic static and dynamic properties of the device. The purpose of this paper is to review GaAsFET noise properties; from this review, a description of precise noise measurement techniques is made. Some experimental and theoretical results on the minimum noise figure are shown for several GaAsFET devices. (author)

Formation of defects at high temperature plastic deformation of gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Mikhnovich, V.V.

2006-03-14

The purpose of the present thesis consists in acquiring more concrete information concerning the mechanism of the movement of dislocations and types of defects that appear during the process of dislocation motion on the basis of systematic experimental studies of the GaAs deformation. Experimental studies concerning the dependence of the stress of the samples from their deformation at different values of the deformation parameters (like temperature and deformation speed) were conducted in this paper. To determine the concentration of defects introduced in samples during the deformation process the positron annihilation spectroscopy (PAS) method was used. The second chapter of this paper deals with models of movement of dislocations and origination of defects during deformation of the samples. In the third chapter channels and models of positron annihilation in the GaAs samples are investigated. In the forth chapter the used experimental methods, preparation procedure of test samples and technical data of conducted experiments are described. The fifth chapter shows the results of deformation experiments. The sixth chapter shows the results of positron lifetime measurements by the PAS method. In the seventh chapter one can find analyses of the values of defects concentration that were introduced in samples during deformation. (orig.)

Digital gallium arsenide insertion into the OH-58D Scout helicopter

Science.gov (United States)

Misko, Timothy; Andrade, Norm

1990-10-01

A very-high-speed sensor processor subsystem (MSPS) is described in terms of its design, fabrication techniques, and applications to fielded military systems. Incorporated in the design are high-speed GaAs and Si integrated circuits and an algorithm for aided target recognition and multiple target tracking. The existing Mast Mounted Sight (MMS) system is described, and the MSPS system is described in detail to permit a comparison of the two system processors. The speed of the proposed system is 100 million instructions/s, and the system operates in parallel and offers 24-bit floating point multiplies and ALU operations and 16 bit integer multiplies internal with 24-bit integer operations and external memory access. The processor employs existing form factor, power supply, operational software, and interfaces, and can be operated at about the same cost with reduced operator workload.

Gallium arsenide p+–n–p+-structures with impoverished base area

Directory of Open Access Journals (Sweden)

Karimov A. V.

2009-06-01

Full Text Available It is displayed experimentally, that the current transport’s mechanism through p+GaAs–nGaAs–p+GaAs-structure is formed by injection-tunnel and generation-recombination mechanisms. Injection-tunnel current prevails at modulation of base’s part which contains defects, and generation-recombination currents are determinative at modulation of base’s part with lesser defectiveness. p+GaAs–nGaAs–p+GaAs-structures are of interest for creating voltage suppressors and electronic switches on their base.

Time-Resolved Studies of Laser-Induced Phase Transitions in Gallium Arsenide

Science.gov (United States)

Siegal, Yakir

This thesis describes a series of time-resolved experiments of the linear and nonlinear optical properties of GaAs during laser-induced phase transitions. The first set of experiments consists of a direct determination of the behavior of the linear dielectric constant at photon energies of 2.2 eV and 4.4 eV following excitation of the sample with 1.9-eV, 70-fs laser pulses spanning a fluence range from 0 to 2.5 kJ/m^2. The results from this set of experiments were used to extract the behavior of the second-order optical susceptibility from second-harmonic generation measurements made under identical excitation conditions. These experiments are unique because they provide explicit information on the behavior of intrinsic material properties--the linear and nonlinear optical susceptibilities--during laser-induced phase transitions in semiconductors without the ambiguities in interpretation that are generally inherent in reflectivity and second-harmonic generation measurements. The dielectric constant data indicate a drop in the average bonding-antibonding splitting of GaAs following the laser pulse excitation. This behavior leads to a collapse of the band-gap on a picosecond time scale for excitation at fluences near the damage threshold of 1.0 kJ/m ^2 and even faster at higher excitation fluences. The changes in the electronic band structure result from a combination of electronic screening by the excited free carriers and structural deformation of the lattice caused by the destabilization of the covalent bonds. The behavior of the second-order susceptibility shows that the material loses long-range order before the average bonding-antibonding splitting, which is more sensitive to short-range structure, changes significantly. Loss of long-range order and a drop of more than 2 eV in the average bonding-antibonding splitting are seen even at fluences below the damage threshold, a regime in which the laser-induced changes are reversible.

Gallium arsenide digital integrated circuits for controlling SLAC CW-RF systems

International Nuclear Information System (INIS)

Ronan, M.T.; Lee, K.L.; Corredoura, P.; Judkins, J.G.

1989-01-01

In order to fill the PEP and SPEAR storage rings with beams from the SLC linac and damping rings, precise control of the linac subharmonic buncher and the damping ring RF is required. Recently several companies have developed resettable GaAs master/slave D-type flip-flops which are capable of operating at frequencies of 3 GHz and higher. Using these digital devices as frequency dividers, one can phase shift the SLAC CW-RF systems to optimize the timing for filling the storage rings. The authors have evaluated the performance of integrated circuits from two vendors for our particular application. Using microstrip circuit techniques, they have built and operated in the accelerator several chassis to synchronize a reset signal from the storage rings to the SLAC 2.856 GHz RF and to phase shift divide-by-four and divide-by-sixteen frequency dividers to the nearest 350 psec bucket required for filling

Gallium arsenide digital integrated circuits for controlling SLAC CW-RF systems

International Nuclear Information System (INIS)

Ronan, M.T.; Lee, K.L.; Corredoura, P.; Judkins, J.G.

1988-10-01

In order to fill the PEP and SPEAR storage rings with beams from the SLC linac and damping rings, precise control of the linac subharmonic buncher and the damping ring RF is required. Recently several companies have developed resettable GaAs master/slave D-type flip-flops which are capable of operating at frequencies of 3 GHz and higher. Using these digital devices as frequency dividers, one can phase shift the SLAC CW-RF systems to optimize the timing for filling the storage rings. We have evaluated the performance of integrated circuits from two vendors for our particular application. Using microstrip circuit techniques, we have built and operated in the accelerator several chassis to synchronize a reset signal from the storage rings to the SLAC 2.856 GHz RF and to phase shift divide-by-four and divide-by-sixteen frequency dividers to the nearest 350 psec bucket required for filling. 4 refs., 4 figs., 2 tabs

Gallium arsenide single crystal solar cell structure and method of making

Science.gov (United States)

Stirn, Richard J. (Inventor)

1983-01-01

A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p/n or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film.

Gallium Arsenide detectors for X-ray and electron (beta particle) spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Lioliou, G.; Barnett, A.M.

2016-11-11

Results characterizing GaAs p{sup +}-i-n{sup +} mesa photodiodes with a 10 µm i layer for their spectral response under illumination of X-rays and beta particles are presented. A total of 22 devices, having diameters of 200 µm and 400 µm, were electrically characterized at room temperature. All devices showed comparable characteristics with a measured leakage current ranging from 4 nA/cm{sup 2} to 67 nA/cm{sup 2} at an internal electric field of 50 kV/cm. Their unintentionally doped i layers were found to be almost fully depleted at 0 V due to their low doping density. {sup 55}Fe X-ray spectra were obtained using one 200 µm diameter device and one 400 µm diameter device. The best energy resolution (FWHM at 5.9 keV) achieved was 625 eV using the 200 µm and 740 eV using the 400 µm diameter device, respectively. Noise analysis showed that the limiting factor for the energy resolution of the system was the dielectric noise; if this noise was eliminated by better design of the front end of the readout electronics, the achievable resolution would be 250 eV. {sup 63}Ni beta particle spectra obtained using the 200 µm diameter device showed the potential utility of these detectors for electron and beta particle detection. The development of semiconductor electron spectrometers is important particularly for space plasma physics; such devices may find use in future space missions to study the plasma environment of Jupiter and Europa and the predicted electron impact excitation of water vapor plumes from Europa hypothesized as a result of recent Hubble Space Telescope (HST) UV observations.

Structural analysis of as-deposited and annealed low-temperature gallium arsenide

Science.gov (United States)

Matyi, R. J.; Melloch, M. R.; Woodall, J. M.

1993-04-01

The structure of GaAs grown at low substrate temperatures (LT-GaAs) by molecular beam epitaxy has been studied using high resolution X-ray diffraction methods. Double crystal rocking curves from the as-deposited LT-GaAs show well defined interference fringes, indicating a high level of structural perfection. Triple crystal diffraction analysis of the as-deposited sample showed significantly less diffuse scattering near the LT-GaAs 004 reciprocal lattice point compared with the substrate 004 reciprocal lattice point, suggesting that despite the incorporation of approximately 1% excess arsenic, the epitaxial layer had superior crystalline perfection than did the GaAs substrate. Triple crystal scans of annealed LT-GaAs showed an increase in the integrated diffuse intensity by approximately a factor of three as the anneal temperature was increased from 700 to 900°C. Analogous to the effects of SiO2 precipitates in annealed Czochralski silicon, the diffuse intensity is attributed to distortions in the epitaxial LT-GaAs lattice by arsenic precipitates.

Atomistic simulation studies of iron sulphide, platinum antimonide and platinum arsenide

CSIR Research Space (South Africa)

Ngoepe, PE

2005-09-01

Full Text Available The authors present the results of atomistic simulations using derived interatomic potentials for the pyrite-structured metal chalcogenides FeS2, PtSb2 and PtAs2. Structural and elastic constants were calculated and compared with experimental...

Proximity annealing of sulfur-implanted gallium arsenide using a strip heater

International Nuclear Information System (INIS)

Banerjee, S.; Baker, J.

1985-01-01

A graphite strip heater has been employed for rapid (-- 30 s) thermal annealing (RTA), at temperatures between 850 and 1150 0 C, of Cr-doped GaAs implanted with 120 keV 32 S + with doses between 10 13 and 10 15 cm -2 . In order to minimize the incongruent evaporation of As, proximity anneals were employed by protecting the implanted samples with GaAs cover pieces. RTA yields electrical activation and donor mobilities better than or comparable to furnace annealing, with less redistribution of the implanted S and background Cr. (author)

Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides

OpenAIRE

A. Schlechte, R. Niewa, M. Schmidt, G. Auffermann, Yu. Prots, W. Schnelle, D. Gnida, T. Cichorek, F. Steglich and R. Kniep

2007-01-01

Ternary phases in the systems Zr–As–Se and Zr–As–Te were studied using single crystals of ZrAs1.40(1)Se0.50(1) and ZrAs1.60(2)Te0.40(1) (PbFCl-type of structure, space group P4/nmm) as well as ZrAs0.70(1)Se1.30(1) and ZrAs0.75(1)Te1.25(1) (NbPS-type of structure, space group Immm). The characterization covers chemical compositions, crystal structures, homogeneity ranges and electrical resistivities. At 1223 K, the Te-containing phases can be described with the general formula ZrAsxTe2−x, with...

AASERT: Rare Earth Arsenides, Magnetic Semi-Metal Epitaxy for Opto-Electronics

National Research Council Canada - National Science Library

Palmstrom, Chris

2000-01-01

...). An ultra-high vacuum sample transfer system and a variable temperature scanning tunneling microscope were attached to two already existing molecular beam epitaxy systems and surface science equipment...

A Study on the Transversal Optical Mode in Amorphous Gallium Arsenide

OpenAIRE

Grado-Caffaro, M. A.; Grado-Caffaro, M.

1998-01-01

Contributions to the far-infrared spectrum corresponding to both dynamical and structural disorders in a-GaAs are examined when frequency coincides with the transversal optical mode. Under these circumstances, dipole moment matrix element is discussed.

Gallium Arsenide detectors for X-ray and electron (beta particle) spectroscopy

Science.gov (United States)

Lioliou, G.; Barnett, A. M.

2016-11-01

Results characterizing GaAs p+-i-n+ mesa photodiodes with a 10 μm i layer for their spectral response under illumination of X-rays and beta particles are presented. A total of 22 devices, having diameters of 200 μm and 400 μm, were electrically characterized at room temperature. All devices showed comparable characteristics with a measured leakage current ranging from 4 nA/cm2 to 67 nA/cm2 at an internal electric field of 50 kV/cm. Their unintentionally doped i layers were found to be almost fully depleted at 0 V due to their low doping density. 55Fe X-ray spectra were obtained using one 200 μm diameter device and one 400 μm diameter device. The best energy resolution (FWHM at 5.9 keV) achieved was 625 eV using the 200 μm and 740 eV using the 400 μm diameter device, respectively. Noise analysis showed that the limiting factor for the energy resolution of the system was the dielectric noise; if this noise was eliminated by better design of the front end of the readout electronics, the achievable resolution would be 250 eV. 63Ni beta particle spectra obtained using the 200 μm diameter device showed the potential utility of these detectors for electron and beta particle detection. The development of semiconductor electron spectrometers is important particularly for space plasma physics; such devices may find use in future space missions to study the plasma environment of Jupiter and Europa and the predicted electron impact excitation of water vapor plumes from Europa hypothesized as a result of recent Hubble Space Telescope (HST) UV observations.

Pseudogap from preformed Cooper pairs in a platinum-iron-arsenide superconductor

Energy Technology Data Exchange (ETDEWEB)

Surmach, M.A.; Brueckner, F.; Kamusella, S.; Sarkar, R.; Portnichenko, P.Y.; Klauss, H.H.; Inosov, D.S. [TU Dresden (Germany); Park, J.T. [MLZ, Garching (Germany); Luetkens, H.; Biswas, P. [PSI, Villigen (Switzerland); Choi, W.J.; Seo, Y.I.; Kwon, Y.S. [DGIST, Daegu (Korea, Republic of)

2015-07-01

Using a combination of μSR, INS and NMR, we investigated the novel iron-based superconductor with a triclinic crystal structure (CaFe{sub 1-x}Pt{sub x}As){sub 10}Pt{sub 3}As{sub 8} (T{sub c}=13 K). The T-dependence of the superfluid density from our μSR relaxation-rate measurements indicates the presence of two superconducting gaps. According to our INS measurements, commensurate spin fluctuations are centered at the (π, 0) wave vector. Their intensity is unchanged across T{sub c}, indicating the absence of a spin resonance typical for many Fe-based superconductors. Instead, we observed a peak in the spin-excitation spectrum around ℎω{sub 0}=7 meV at the same wave vector, which persists above T{sub c}. The temperature dependence of magnetic intensity at 7 meV revealed an anomaly around T*=45 K related to the disappearance of this new mode. A suppression of the spin-lattice relaxation rate, 1/T{sub 1}T, observed by NMR immediately below T* without any notable subsequent anomaly at T{sub c}, indicates that T* could mark the onset of a pseudogap in (CaFe{sub 1-x}Pt{sub x}As){sub 10}Pt{sub 3}As{sub 8}, which is likely associated with the emergence of preformed Cooper pairs.

(CaFeAs)10PtzAs8 superconductors and related compounds

International Nuclear Information System (INIS)

Stuerzer, Tobias

2015-01-01

The main topic of this dissertation is the identification of new compounds, structure determination, and substitution dependent investigation of properties in this new branch of the family of iron arsenide superconductors (Chapter 2). Chapter 2.1 presents the identification of the superconducting compounds and the corresponding structure elucidation identifying two dif-ferent species (CaFeAs) 10 Pt 3 As 8 and (CaFeAs) 10 Pt 4 As 8 in this family (abbreviated as 1038 and 1048 according to their stoichiometry). However, a closer look revealed a more challenging structure chemistry which is covered in Chapter 2.2. The following two Chapters 2.3 and 2.4 are devoted to (CaFeAs) 10 Pt 3 As 8 and more detailed investigations on this parent compound of the new superconductor family. Furthermore, transition metal substitution series (CaFe 1-x M x As) 10 Pt 3 As 8 were synthesized to investigate the resemblance to model systems Ba(Fe 1-x M x ) 2 As x and LaO(Fe 1-x M x )As in the scope of structural changes and superconductivity as described in Chapter 2.5. Initially amazing differences in superconducting properties com-paring 1038 and 1048 compounds are analyzed in Chapter 2.6 establishing an universal dop-ing model in the (CaFe 1-x M x As) 10 Pt z As 8 family. Additionally substituent dependent properties upon rare earth substitution in electron doped (Ca 1-y RE y FeAs) 10 Pt 3 As 8 are investigated in Chapter 2.7, while a detailed study of superconducting properties and magnetism in (Ca 1-y La y FeAs) 10 Pt 3 As 8 by the local μSR technique is presented in Chapter 2.8. In Chapter 2.9 a comparison of direct and electron doping is discussed based on codoping experiments in (Ca 1-y La y Fe 1-x Pt x As) 10 Pt 3 As 8 and (CaFe 1-x Pt x As) 10 Pt 4 As 8 . Finally, in Chapter 2.10 electron doping in stoichiometric 1048 is studied by charge compensation experiments in (Ca 1-y Na y FeAs) 10 Pt 4 As 8 . Chapter 3 is dedicated to a new family of calcium iron arsenides featuring

Scanning near-field infrared microscopy on semiconductor structures

Energy Technology Data Exchange (ETDEWEB)

Jacob, Rainer

2011-01-15

literature. While the structures of the first system were in the micrometer regime, the capability to probe buried nanostructures is demonstrated at a sample of indium arsenide quantum dots. Those dots are covered by a thick layer of gallium arsenide. For the first time ever, it is shown experimentally that transitions between electron states in single quantum dots can be investigated by near-field microscopy. By monitoring the near-field response of these quantum dots while scanning the wavelength of the incident light beam, it was possible to obtain characteristic near-field signatures of single dots. Near-field contrasts up to 30 % could be measured for resonant excitation of electrons in the conduction band of the indium arsenide dots. (orig.)

Scanning near-field infrared microscopy on semiconductor structures

International Nuclear Information System (INIS)

Jacob, Rainer

2011-01-01

literature. While the structures of the first system were in the micrometer regime, the capability to probe buried nanostructures is demonstrated at a sample of indium arsenide quantum dots. Those dots are covered by a thick layer of gallium arsenide. For the first time ever, it is shown experimentally that transitions between electron states in single quantum dots can be investigated by near-field microscopy. By monitoring the near-field response of these quantum dots while scanning the wavelength of the incident light beam, it was possible to obtain characteristic near-field signatures of single dots. Near-field contrasts up to 30 % could be measured for resonant excitation of electrons in the conduction band of the indium arsenide dots. (orig.)

The significance of chromosome deletions in atomic-bomb survivors

International Nuclear Information System (INIS)

Tanaka, Kimio; Shigeta, Chiharu; Oguma, Nobuo; Kamada, Nanao; Deng, Z.; Niimi, Masanobu; Aisaka, Tadaichi.

1986-01-01

In 39 A-bomb survivors 40 years after exposure at ≤ 1,000 m from ground zero, the frequency and features of chromosome deletions in peripheral lymphocytes were examined using a differential staining technique. Simultaneously, in vitro irradiation experiment with Cf-252 was made to infer chromosome aberrations occuring immediately after exposure. Californium-252 with 100 rad induced dicentric and ring chromosomes in 40 % of the cells and acentric fragments in 44 %. Among the A-bomb survivors, chromosome aberrations were observed in 651 (21 %) of the total 3,136 cells. There were 146 cells with deletions (22 % of abnormal cells; 5 % of the total cells), and 10 cells with acentric fragment (0.3 % of the total cells). The figure for deletions was far higher than that reported in the literature. A large number of deletions were seen in chromosomes no.4, no.21, and no.22, and a few deletions in chromosomes no.7 and no.20. Significance of chromosome deletions is discussed. (Namekawa, K.)

Cleanex process: a versatile solvent extraction process for recovery and purification of lanthanides, americium, and curium

International Nuclear Information System (INIS)

Bigelow, J.E.; Collins, E.D.; King, L.J.

1979-01-01

At a concentration of 1 M in straight-chain hydrocarbon diluent, HDEHP will extract americium, curium, and other trivalent actinide and lanthanide elements from dilute acid or salt solutions. The solute is back-extracted with more concentrated acid, either nitric or hydrochloric. The process has been used in the continuous, countercurrent mode, but its greatest advantage arises in batch extractions where the excess acid can be titrated with NaOH to produce a final acidity of about 0.03 M. Under these conditions, 99% recovery can be achieved, usually in one stage. Cleanex was used on the 50-liter scale at the Transuranium Processing Plant at Oak Ridge for 12 years to provide a broad spectrum cleanup to transuranium elements before applying more sophisticated techniques for separating individual products. The process is also used routinely to recover excessive losses of curium and/or californium from plant waste streams. The solvent system is relatively resistant to radiation damage, being usable up to 200 W-h/liter

Dynamic vortex dust structures in a nuclear-track plasma

International Nuclear Information System (INIS)

Rykov, V A; Khudyakov, A V; Filinov, V S; Vladimirov, V I; Deputatova, L V; Krutov, D V; Fortov, V E

2003-01-01

Results are presented from Monte Carlo calculations of the electric charge on dust grains in a plasma produced during the slowing down of radioactive decay products of californium nuclei in neon. The dust grain charging is explained as being due to the drift of electrons and ions in an external electric field. It is shown that the charges of the grains depend on their coordinates and strongly fluctuate with time. The time-averaged grain charges agree with the experimental data obtained on ordered liquid-like dust structures in a nuclear-track plasma. The time-averaged dust grain charges are used to carry out computer modelling of the formation of dynamic vortex structures observed in experiments. Evidence is obtained for the fact that the electrostatic forces experienced by the dust grains are potential in character. The paper is supplemented by a video clip showing the typical dynamics of the simulated vortex dust structure

Monitoring taconite process streams with thermal neutron capture-gamma ray analysis. Report of investigations/1980

International Nuclear Information System (INIS)

Woodbury, F.B.W.

1980-12-01

The Bureau of Mines is evaluating alternative technologies to treat oxidized taconites. Since process control is an essential element in the application of these process technologies, research was performed on a prototype monitoring system utilizing a californium-252 (252-Cf) neutron source and a thermal neutron capture-gamma ray spectra analysis method to measure the amount of iron and percent solids in process slurries. The prototype system was used to monitor the concentrate and tailing streams in a 900-lb/hr flotation pilot plant during continuous around-the-clock tests. The iron content of the process slurries was determined by measuring the total peak areas under the capture spectrum peaks at 7.626-7.632 MeV, the associated escape peaks at 7.136-7.122 and 6.626-6.612 MeV, and the iron doublets at 4.900 and 4.998 MeV. A potential method for determining the percent solids in process slurries using the 2.22 MeV hydrogen capture peak is discussed

A survey of uses and users of 252Cf

International Nuclear Information System (INIS)

Bigelow, J.E.; Alexander, C.W.; King, L.J.; Knauer, J.B.; Notz, K.J.

1989-01-01

Californium-252, which is one of the transuranium-element isotopes being produced in the Radiochemical Engineering Development Center (REDC) at Oak Ridge National Laboratory (ORNL), has found many applications in service to industry and medicine. As a neutron source, 252 Cf is unique in providing a highly concentrated and extremely reliable neutron spectrum from a very small assembly. Over the past 22 years, 252 Cf has been applied with great success to cancer therapy, to neutron radiography of objects ranging from flowers to entire aircraft, to startup sources for nuclear reactors, to fission activation assay for quality control and safeguards of all commercial nuclear fuel, and to many other beneficial uses, some of which are now poised for further growth. The extensive exploitation of this highly specialized product has been made possible through 252 Sales/Loan programs sponsored by the US DOE Office of Nuclear Materials Production, initially at the Savannah River Laboratory and now at ORNL

Reactor production of 252Cf and transcurium isotopes

International Nuclear Information System (INIS)

Alexander, C.W.; Halperin, J.; Walker, R.L.; Bigelow, J.E.

1990-01-01

Berkelium, californium, einsteinium, and fermium are currently produced in the High Flux Isotope Reactor (HFIR) and recovered in the Radiochemical Engineering Development Center (REDC) at the Oak Ridge National Laboratory (ORNL). All the isotopes are used for research. In addition, 252 Cf, 253 Es, and 255 Fm have been considered or are used for industrial or medical applications. ORNL is the sole producer of these transcurium isotopes in the western world. A wide range of actinide samples were irradiated in special test assemblies at the Fast Flux Test Facility (FFTF) at Hanford, Washington. The purpose of the experiments was to evaluate the usefulness of the two-group flux model for transmutations in the special assemblies with an eventual goal of determining the feasibility of producing macro amounts of transcurium isotopes in the FFTF. Preliminary results from the production of 254g Es from 252 Cf will be discussed. 14 refs., 5 tabs

Actinide metals

Energy Technology Data Exchange (ETDEWEB)

Brown, Paul L. [Geochem Australia, Kiama, NSW (Australia); Ekberg, Christian [Chalmers Univ. of Technology, Goeteborg (Sweden). Nuclear Chemistry/Industrial Materials Recycling

2016-07-01

All isotopes of actinium are radioactive and exist in aqueous solution only in the trivalent state. There have been very few studies on the hydrolytic reactions of actinium(III). The hydrolysis reactions for uranium would only be important in alkaline pH conditions. Thermodynamic parameters for the hydrolysis species of uranium(VI) and its oxide and hydroxide phases can be determined from the stability and solubility constants. The hydrolytic behaviour of neptunium(VI) is quite similar to that of uranium(VI). The solubility constant of NpO{sub 2}OH(am) has been reported a number of times for both zero ionic strength and in fixed ionic strength media. Americium can form four oxidation states in aqueous solution, namely trivalent, tetravalent, pentavalent and hexavalent. Desire, Hussonnois and Guillaumont determined stability constants for the species AmOH{sup 2+} for the actinides, plutonium(III), americium(III), curium(III), berkelium(III) and californium(III) using a solvent extraction technique.

Actinide metals

International Nuclear Information System (INIS)

Brown, Paul L.; Ekberg, Christian

2016-01-01

All isotopes of actinium are radioactive and exist in aqueous solution only in the trivalent state. There have been very few studies on the hydrolytic reactions of actinium(III). The hydrolysis reactions for uranium would only be important in alkaline pH conditions. Thermodynamic parameters for the hydrolysis species of uranium(VI) and its oxide and hydroxide phases can be determined from the stability and solubility constants. The hydrolytic behaviour of neptunium(VI) is quite similar to that of uranium(VI). The solubility constant of NpO 2 OH(am) has been reported a number of times for both zero ionic strength and in fixed ionic strength media. Americium can form four oxidation states in aqueous solution, namely trivalent, tetravalent, pentavalent and hexavalent. Desire, Hussonnois and Guillaumont determined stability constants for the species AmOH 2+ for the actinides, plutonium(III), americium(III), curium(III), berkelium(III) and californium(III) using a solvent extraction technique.

Nuclear Chemistry Institute, Mainz University. Annual Report 1995

International Nuclear Information System (INIS)

Denschlag, H.O.

1996-03-01

The annual report of the Institut fuer Kernchemie addresses inter alia three main research activities. The first belongs to the area of basic research, covering studies in the fields of nuclear fission, chemistry of the super-heavy elements and of heavy-ion reactions extending from the Coulomb barrier to relativistic energies, and nuclear astrophysics in connection with the ''r process''. By means of laser technology, high-precision data could be measured of the ionization energies of berkelium and californium. Studies of atomic clusters in the vacuum of an ionization trap revealed interesting aspects. The second major activity was devoted to the analysis of environmental media, applying inter alia neutron activation analysis and resonance ionization mass spectroscopy (RIMS). The third activity resulted in the development of novel processes, or the enhancement of existing processes or methods, for applications in basic research work and in environmental analytics. Another item of interest is the summarizing report on the operation of the TRIGA research reactor. (orig./SR) [de

Test and evaluation results of the 252Cf shuffler at the Savannah River Plant

International Nuclear Information System (INIS)

Crane, T.W.

1981-03-01

The 252 Cf Shuffler, a nondestructive assay instrument employing californium neutron source irradiation and delayed-neutron counting, was developed for measuring 235 U content of scrap and waste items generated at the Savannah River Plant (SRP) reactor fuel fabrication facility. The scrap and waste items include high-purity uranium-aluminum alloy ingots as well as pieces of castings, saw and lathe chips from machining operations, low-purity items such as oxides of uranium or uranium intermixed with flux materials found in recovery operations, and materials not recoverable at SRP such as floor sweepings or residues from the uranium scrap recovery operation. The uranium contains about 60% 235 U with the remaining isotopes being 236 U, 238 U, and 234 U in descending order. The test and evaluation at SRP concluded that the accuracy, safety, reliability, and ease of use made the 252 Cf Shuffler a suitable instrument for routine use in an industrial, production-oriented plant

General purpose nuclear irradiation chamber

International Nuclear Information System (INIS)

Nurul Fadzlin Hasbullah; Nuurul Iffah Che Omar; Nahrul Khair Alang Md Rashid; Jaafar Abdullah

2013-01-01

Nuclear technology has found a great need for use in medicine, industry, and research. Smoke detectors in our homes, medical treatments and new varieties of plants by irradiating its seeds are just a few examples of the benefits of nuclear technology. Portable neutron source such as Californium-252, available at Industrial Technology Division (BTI/ PAT), Malaysian Nuclear Agency, has a 2.645 year half-life. However, 252 Cf is known to emit gamma radiation from the source. Thus, this chamber aims to provide a proper gamma shielding for samples to distinguish the use of mixed neutron with gamma-rays or pure neutron radiation. The chamber is compatible to be used with other portable neutron sources such as 241 Am-Be as well as the reactor TRIGA PUSPATI for higher neutron dose. This chamber was designed through a collaborative effort of Kulliyyah Engineering, IIUM with the Industrial Technology Division (BTI) team, Malaysian Nuclear Agency. (Author)

Geochemical zoning around the McClean uranium deposits, Saskatchewan, Canada

International Nuclear Information System (INIS)

Golightly, J.P.; Brummer, J.J.; Saracoglu

1983-01-01

The uranium mineralization of the McClean deposits can be described as belonging to two different facies; a more reduced sulphide-arsenide facies and a more oxidized hematite-'bleached' facies, superimposed on any one of three host rocks. The trace metals can be grouped according to their redox behaviour. Vanadium, Mo and U, occurring as oxides, form one group while Ni, Co, Zn, Cu and As, occurring as sulphides and/or arsenides, form intermediate and most reduced groups, respectively. The ratio of oxidized to reduced minerals can be represented by the ratio of U/Ni. This ratio can be used to estimate the variation of redox potential in the deposit at the time of deposition or alteration. A generalized Eh-pH diagram is used to qualitatively describe the significance of each mineral facies. The U/Ni ratio of the transition between the hematite and 'bleached' facies increases upwards. The phase diagram suggests that a possible cause is an upward decrease in pH and increase in Eh. Uranium analysis of the drill core shows that there is little movement of U into the overlying sandstones from basement rocks and regolith that contain no uranium deposits. Uranium in the Athabasca sandstone from these areas averages less than 1 ppm. However, where uranium zones have been found in the basement rocks, regolith and lower Athabasca sandstone, U values greater than 2-3 ppm consistently occur in the overlying sandstones at or near surface. Results suggest that target areas containing deeply buried uranium deposits could be defined by U analyses of the Athabasca sandstone from quite widely spaced holes of limited depth. (Auth.)

Application of fission track detectors to californium-252 neutron dosimetry in tissue near the radiation source

International Nuclear Information System (INIS)

Oswald, R.A.; Lanzl, L.H.; Rozenfeld, M.

1981-01-01

Fission track detectors were applied to a unique problem in neutron dosimetry. Measurements of neutron doses were required at locations within a tumor of 1 cm diameter implanted on the back of a mouse and surrounded by a square array of four 252 Cf medical sources. Measurements made in a tissue-equivalent mouse phantom showed that the neutron dose rate to the center of the tumor was 2.18 rads mg -1 h -1 +- 8.4%. The spatial variation of neutron dose to the tumor ranged from 1.88 to 2.55 rads mg -1 h -1 . These measurements agree with calculated values of neutron dose to those locations in the phantom. Fission track detectors have been found to be a reliable tool for neutron dosimetry for geometries in which one wishes to know neutron dose values which may vary considerably over distances of 1 cm or less

Application of fission track detectors to californium-252 neutron dosimetry in tissue near the radiation source

International Nuclear Information System (INIS)

Oswald, R.A.; Lanzl, L.H.; Rozenfeld, M.

1981-01-01

Fission track detectors were applied to a unique problem in neutron dosimetry. Measurements of neutron doses were required at locations within a tumor of 1 cm diameter implanted on the back of a mouse and surrounded by a square array of four 252 Cf medical sources. Measurements made in a tissue-equivalent mouse phantom showed that the neutron dose rate to the center of the tumor was 2.18 rads micrograms-1 h-1 +/- 8.4%. The spatial variation of neutron dose to the tumor ranged from 1.88 to 2.55 rads micrograms-1 h-1. These measurements agree with calculated values of neutron dose to those locations in the phantom. Fission track detectors have been found to be a reliable tool for neutron dosimetry for geometries in which one wishes to know neutron dose values which may vary considerably over distances of 1 cm or less

Theory of weak localization in ferromagnetic (Ga,Mn)As

Czech Academy of Sciences Publication Activity Database

Garate, I.; Sinova, J.; Jungwirth, Tomáš; MacDonald, A.

2009-01-01

Roč. 79, č. 15 (2009), 155702/1-155702/13 ISSN 1098-0121 R&D Projects: GA MŠk LC510; GA AV ČR KAN400100652; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 214499 - NAMASTE; European Commission(XE) 015728 - NANOSPIN Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : electrical conductivity * exchange interactions (electron) * ferromagnetic materials * gallium arsenide * magnetic semiconductors * magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.475, year: 2009 http://link.aps.org/doi/10.1103/PhysRevB.79.155207

Integrated semiconductor optical sensors for chronic, minimally-invasive imaging of brain function.

Science.gov (United States)

Lee, Thomas T; Levi, Ofer; Cang, Jianhua; Kaneko, Megumi; Stryker, Michael P; Smith, Stephen J; Shenoy, Krishna V; Harris, James S

2006-01-01

Intrinsic optical signal (IOS) imaging is a widely accepted technique for imaging brain activity. We propose an integrated device consisting of interleaved arrays of gallium arsenide (GaAs) based semiconductor light sources and detectors operating at telecommunications wavelengths in the near-infrared. Such a device will allow for long-term, minimally invasive monitoring of neural activity in freely behaving subjects, and will enable the use of structured illumination patterns to improve system performance. In this work we describe the proposed system and show that near-infrared IOS imaging at wavelengths compatible with semiconductor devices can produce physiologically significant images in mice, even through skull.

Materials processing in zero gravity. [space manufacturing

Science.gov (United States)

Wuenscher, H. F.

1973-01-01

Manufacturing processes which are expected to show drastic changes in a space environment due to the absence of earth gravity are classified according to (1) buoyancy and thermal convection sensitive processes and (2) processes where molecular forces like cohesion and adhesion remain as the relatively strongest and hence controlling factors. Some specific process demonstration experiments carried out during the Apollo 14 mission and in the Skylab program are described. These include chemical separation by electrophoresis, the M551 metals melting experiment, the M552 exothermic brazing experiment, the M553 sphere forming experiment, the M554 composite casting experiment, and the M555 gallium arsenide crystal growth experiment.

Ab-initio study of the electronic structure of sup 1 sup 9 F implanted in GaAs and GaN crystals

CERN Document Server

Park, J H; Cho, H S; Shin, Y N

1998-01-01

We have studied the nuclear quadrupole interaction of a fluorine atom implanted in gallium arsenide and gallium nitride cluster models using the ab-initio Hartree-Fock theory. For the three possible fluorine sites in GaAs and GaN, we have determined the location of the implanted fluorine atom by using a self-consistent calculation, the electric field gradient at the implanted atom, and the electronic structure. Good agreement is found with experimental data wherever they are available. Predictions are made for the implanted fluorine site associated with the total energy and the electric field gradient which are expected to be measurable by a variety of experimental techniques.

Impacts of satellite power system technology

Energy Technology Data Exchange (ETDEWEB)

Moses, H.

1979-01-01

In the Satellite Power System (SPS) considered here, energy from the sun is collected by an array, 5 km*10.5 km in area, located in geostationary orbit. The array contains either silicon or gallium aluminum arsenide photovoltaic cells whose output is transformed to 2.45 GHz microwaves. These are beamed to earth to a 10 km*15 km rectifying antenna (rectenna) which rectifies the microwaves and interfaces the power with utility power lines. This paper deals with an assessment of both the environmental and societal aspects of an SPS. Under environmental aspects, attention is devoted to the health and ecological effects of both microwave radiation and other effects. 15 refs.

Rhodium. Suppl. Vol. B1

International Nuclear Information System (INIS)

Griffith, W.P.; Jehn, H.; McCleverty, J.A.; Raub, C.J.; Robinson, S.D.

1982-01-01

The present rhodium vol. B1 is concerned largely with linary compounds and coordination complexes of this important metal, which is used either alone or in alloy form for fabrication of other materials or for heterogeneous catalysis. In first two chapters are devoted for hydrides, oxides, ternary and quaternary oxorhodates. Third chapter is on different type of complexes with nitrogen. From chapter four to seven is on halogen complexes with this metal. Next chapters are on sulphides, sulphoxide and sulphito complexes, sulphates and sulphato complexes, selenides and tellurides, borides, borane complexes, carbides, carbonato, cyno, fulminato and thiocyanato complexes. Finally, silicide, phosphides, phosphito and arsenides are treated over here. (AB)

Initial development of a laser altimeter

Science.gov (United States)

Gilio, J. P.

1985-09-01

A design study was carried out of a small, expendable, self-contained laser altimeter for overwater operation at low altitude. A .904 micrometer Gallium Arsenide laser was used to build a prototype transmitter/ receiver at a cost of less than $600 and small enough to fit inside a 5 inch diameter cylinder, 5 inches long. Tests at a height of 120 feet above the surface of a lake resulted in a signal-to-noise ratio of 6, and validated the trade-off equation used in this study. A second test model, with design improvements incorporated, is predicted to yield a SNR of over 20 for an altitude of 150 meters.

Etching of semiconductor cubic crystals: Determination of the dissolution slowness surfaces

Science.gov (United States)

Tellier, C. R.

1990-03-01

Equations of the representative surface of dissolution slowness for cubic crystals are determined in the framework of a tensorial approach of the orientation-dependent etching process. The independent dissolution constants are deduced from symmetry considerations. Using previous data on the chemical etching of germanium and gallium arsenide crystals, some possible polar diagrams of the dissolution slowness are proposed. A numerical and graphical simulation method is used to obtain the derived dissolution shapes. The influence of extrema in the dissolution slowness on the successive dissolution shapes is also examined. A graphical construction of limiting shapes of etched crystals appears possible using the tensorial representation of the dissolution slowness.