International Nuclear Information System (INIS)

High energy ion backscattering analysis in combination with recently-developed resonance scattering analysis is described, with a stress on precise and quantitative oxygen analysis and its successful application to the characterization and quality estimation of high T_c oxide superconductors. Particularly, the present status of high energy ion backscattering analysis, the review of analytical results for YBa_2Cu_3O_7 _- _x, the estimation of composition and crystalline quality of (La_1 _- _xSr_x)_2CuO_4 by 7 MeV alpha particle backscattering analysis are described.

Energy Technology Data Exchange (ETDEWEB)

This contribution analyzes elastic-backscatter lidar data and temperature and humidity profiles from radiosondes acquired in Barcelona in July 1992. Elastic-backscatter lidar data reveal the distribution of aerosols within the volume of atmosphere scanned. By comparing this information with temperature and humidity profiles of the atmosphere at a similar time, we are able to asses de relationship among aerosol distribution and atmospheric stability or water content, respectively. Comparisons have shown how lidar`s revealed layers of aerosols correspond to atmospheric layers with different stability condition and water content.

Science.gov (United States)

... Mineral and Organic Matter in the Coastal and Near-Coastal Ocean. ... Personal Author(s) : Stavn, Robert H. ; Spiering, Bruce A. ; Gould, Richard W ...

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An x-ray diffraction technique for determining thin-film thickness is presented which should prove to be a valuable alternative to the array of spectroscopies (Rutherford backscattering spectrometry, Auger electron spectroscopy, etc.) currently favored for these measurements. Some of the virtues of this x-ray diffraction approach are its nondestructive nature, fast data acquisition rate (enabling in situ observations), thickness resolution better than 5 nm, and conventional equipment requirements. Results are shown for Pd/sub 2/Si thin films grown during isothermal annealing of Pd coatings (100 nm) on Si at 200 /sup 0/C for various amounts of time. A comparison of these x-ray measurements with Rutherford backscattering spectrometry data taken from the same specimens is used to demonstrate the validity of the x-ray technique.

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In electron beam therapy, tissue overdose due to electrons backscattered from lead has been profusely studied. To quantify this dose enhancement effect, an electron backscatter factor (EBF) wasdefined as the ratio of dose at the tissue-inhomogeneity interface with and without the scatterer present. The dependence of the EBF on energy at the scatterer surface is not well known for energies lower than 3 MeV which is the most frequent clinical situation. In this work, we have done Monte Carlo calculations with the GEANT code to study EBF in lead at this energy range. The applicability of this code and the developed procedure for dose estimation has been experimentally verified. The dependence of the EBF on the beam energy incident on the scatterer has been studied for different nominal beam energies incident at the phantom's surface. The results show a trend of increase of EBF with the beam energy incident on the scatterer between 0.5 and ...

International Nuclear Information System (INIS)

The Compton backscatter technique has been applied to lap-joint in aircraft structure in order to determine mass loss due to exfoliative corrosion of the aluminum alloy sheet skin. The mass loss of each layer has been estimated from Compton backscatter A-scan including the aluminum sheet, the corrosion layer, and the sealant. A Compton backscattering imaging system has been also developed to obtain a cross-sectional profile of corroded lap-splices of aging aircraft using a specially designed slit-type camera. The camera is to focus on a small scattering volume inside the material from which the backscattered photons are collected by a collimated scintillator detector for interpretation of material characteristics. The cross section of the layered structure is scanned by moving the scattering volume through the thickness direction of the specimen. The theoretical model of the Compton scattering based on ...

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The development of a capability to infer wind velocities simultaneously at a number of ranges along one direction in real time is described. The elastic backscatter lidar data used was obtained using the XM94 lidar, developed by Los Alamos National Laboratory for the US Army Chemical and Biological Detection Command. In some respects this problem is simpler than measuring wind velocities on meso-meteorological scales. Other requirements, particularly high temporal fidelity, have driven the development of faster software algorithms and suggested opportunities for the evolution of the hardware.

International Nuclear Information System (INIS)

This work describes the ability of ion beam analysis techniques IBA to simultaneously determine the concentration and the possible depth profile of some light elements, such as carbon, oxygen and nitrogen, in matrices of high atomic number Z, such as stainless steel materials. In fact, the nitriding process of some materials has the potential to improve their tribological and mechanical properties and to offer various advantages as compared with other methods used in the modification of surfaces. Gas and Plasma nitriding were applied to certain types of steel, such as AISI-304 and H-13 which are commonly used in the industry, in order to improve their hardness and their surface corrosion resistance. The improvement was correlated with the depth profile of N and the consequent structure variations. More specifically, non-Rutherford elastic backscattering (alpha, alpha) at 5 MeV was performed on different samples, before and after nitriding, in order to determine the ...

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The Full Aperture Backscatter System (FABS) provides a measure of the spectral power, and integrated energy scattered by stimulated Brillouin (348-354 nm) and Raman (400 - 700 nm) scattering into the final focusing lens of the first four beams of the NIF laser. The system was designed to provide measurements at the highest expected fluences with: (1) spectral and temporal resolution, (2) beam aperture averaging, and (3) near-field imaging. This is accomplished with a strongly attenuating diffusive fiber coupler and streaked spectrometer and separate calibrated time integrated spectrometers, and imaging cameras. Measurement of the wavelength dependent sensitivity of the complete system is accomplished with a calibrated Xe lamp. Data from the calibration system is combined with experimental data to produce the power and energy measurements. Examples of measurements will be discussed.

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A brief overview, from an experimentalist`s point of view, of the possibilities and difficulties involved in building a photon-photon collider using beams produced in Compton backscattering from a linear e{sup +}e{sup -} or e{sup -}e{sup -}collider. Some hindsight is included from the successful March 1994 Berkeley workshop on gamma-gamma colliders. (author). 13 refs., 2 figs.

International Nuclear Information System (INIS)

The thermal stability of diffusion barriers is explored on the basis of Bi films at different expedients of deriving of films. The examinations were conducted on the electrostatic accelerator at KNU of name Karazin V.N. under conditions of an isothermal bakeout directly under a proton beam of 1,85 MeV energy.

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Future linear colliders offer unique opportunities to study {gamma}{gamma}, {gamma}e interactions. Using the laser backscattering method one can obtain {gamma}{gamma}, {gamma}e colliding beams with energy and luminosity comparable to the electron-position luminosity or even higher. In this review physical principles of photon colliders are described and various problems, concerning the accelerator, laser, interaction region and luminosity are discussed. Some examples of physical processes are given. ((orig.)).

Science.gov (United States)

We developed a model for radar scattering from the lunar reoglith layer using vector radiative transfer theory. From this model, both the radar backscattering coefficient and the circular polarization ratio can be predicted analytically as a function of regolith parameters.

International Nuclear Information System (INIS)

Effect of proton backscattering on inelastic pd-scattering is discussed in detail. The discussion was carried out on the basis of interaction mechanism if bombarding particle with flucton. It is noted that fluctons are assumed presently as time multiquark formations of nuclear matter with the size of nucleon size order and density above nucleon one. 35 refs., 10 figs.

International Nuclear Information System (INIS)

An interface-marker technique has been used to investigate the relative rates of diffusion of Si and of metal atoms during the growth of metal silicide films. The technique enables recognition of a reference plane in thin film diffusion using Rutherford backscattering, while minimizing any perturbation of the diffusion process. Examples are drawn from studies of the growth of silicides of W, Mo, Ta, Nb, Pd and Pt. (orig.).

Science.gov (United States)

We develop a 3-D model to simulate the synthetic aperture radar (SAR) image formation process of an undulated vegetation canopy such as corn grown in fields with large periodic drainage reliefs. We explain how the simulated SAR image of undulated vegetation medium is obtained by the convolution of a 2-D slice of the 3-D simulated SAR system point spread function [(PSF), emulating the SAR beam modeled by a cosine modulated Gaussian], with the 2-D projection of the observed undulated vegetation canopy (modeled with scatterers randomly distributed in 3-D undulated space) followed by the extraction of each look envelope, the summation of looks, and sampling in azimuthal and range directions. Our model is useful to study the parameters involved in the formation and the analysis of SAR images of undulated vegetation medium. Validation of simulations made with actual SAR images shows that undulated corn crop canopies are well characterized by the mean contrast of the ...

British Library Electronic Table of Contents (United Kingdom)

A novel method for non-destructive intramuscular fat (IMF) estimation via spectral ultrasound backscatter analysis of signals obtained from pig carcasses early post mortem is described. A commercial hand-held ultrasound device (center frequency: 2.7MHz) was modified to focus the sound beam to the longissimus muscle at the 2nd/3rd last rib. Time-resolved ultrasound backscatter signals of loin muscle were recorded 45minp.m. on 82 pig carcass sides. Backfat width (d"B"F=18.9+/-3.8mm) and muscle attenuation (@a"m"u"s"c"l"e=.77+/-.15dBMHz^-^1cm^-^1) were assessed from the measured pulse echo data. Other propagation properties of skin, backfat and muscle tissue obtained in a previous investigation were incorporated into the signal pre-processing to minimize parameter estimation artifacts. Spectr...

Science.gov (United States)

The identification of crystallographic phases in the scanning electron microscope (SEM) has been limited by the lack of a simple way to obtain electron diffraction data of an unknown while observing the micro structure of the specimen. With the development of Charge Coupled Device (CCD) based detectors, backscattered electron Kikuchi patterns (BEKP), alternately referred to as electron backscattered diffraction patterns (EBSP), can be easily collected. Previously, BEKP has been limited to crystallographic orientation studies due to the poor pattern quality collected with video rate detector systems. With CCD detectors, a typical BEKP can now be acquired from a micron or sub-micron-sized crystal using an exposure time of 1-10 seconds with an accelerating voltage of 10-40 kV and a beam current as low as 0.1 nA. Crystallographic phase analysis using BEKP is unique in that the properly equipped SEM permits high magnification images, BEKP`s, and ...

International Nuclear Information System (INIS)

Obtained experimental data on integral cross sections (ICS) of inelastic scattering of 50.5 MeV #alpha# particles with the excitation of "6","7Li, "9Be, "1"2","1"3C, "1"4C, "1"4N, "2"0Ne, "2"4Mg, "2"8Si nucleus low-lying energy levels are discussed. Regularities, detected in the behaviour of ICS forward scattering for 20-90 deg angles and backscattering for 90-160 deg angles for the target-nucleus under investigation are considered. Effect of reaction open channel number on #alpha#-particle scattering ICS where n,p,d- and #alpha#-channels were considered as the main channels for all the target-nuclei, is discussed. Dependence of #alpha#-particle scattering ICS on the target-nucleus level excitation energy and dependences of reaction open channel number on the channel spin, calculated for 50.5 MeV #alpha# particles and different target nuclei are shown in the diagrams. It is noted that the observed regularities in the #alpha#-particle inelastic scattering ICS are ...

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At future {gamma} {gamma} colliders a massive production of tt-bar pairs is possible. This would allow a detailed investigation of the interactions involving the top quark. The authors propose some correlations which are sensitive to tt-bar final state interactions and compute the QCD and standard model Higgs boson contributions to these correlation. QCD-induced transverse polarization of top quarks is found to be sizeable and measurable at a high-energy e{sup +} e{sup -} collider with an integrated luminosity of 10(fb){sup -1} which is converted into a photon collider by backscattering of laser photons. 16 refs.

International Nuclear Information System (INIS)

In the context of sputtering experiments, studying the back-scattering of fast ion beams is a useful way to study inelastic ion-surface interactions, since then the trajectories and energies of the particles are well defined. This same argument holds for the scattering of fast molecular ions. We give a short account of our experiment where N"+_2 was scattered from a Ni(111) surface. The measured energy distributions of scattered N atoms are discussed with regard to vibrational and rotational energy transfer during scattering. (G.Q.).

International Nuclear Information System (INIS)

Scattered radiation generated in patient and imaging system has to be considered when quality-assurance tests involve dose detection or image-quality estimations. Measurement of automatic-exposure control dose can be altered by backscattering from intensifying screens of more than 10% and the equipment transmission factor can be overestimated up to a factor of 10 when only primary radiation is used. The sensitivity of intensifying screens depends on the angle of incidence of the radiation and so primary and scattered radiation are detected differently. The quality-control aspects of anti-scatter grids are discussed. (author).

International Nuclear Information System (INIS)

The chemical properties of alloys in a given environment are to a large extent governed by the surface composition. Changes of the surface composition during passivation are important features in this respect. Previous studies of single crystal Ni-Mo alloys surfaces have been reported. The aim of this work was to obtain quantitative data, for the natural oxide and the passive films formed on Ni-6% Mo(100) and (110) alloys, using Rutherford backscattering spectroscopy and nuclear reaction analysis. (author).

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Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.

International Nuclear Information System (INIS)

Using the slow electrons spectrometer one can get information on the surface structure, its element composition, chemical bonds, adsorption phenomena, electron state density and surface oscillation. We have developed the methods and created the apparatus that makes it possible to investigate the electron backscattering by solid surface. We have studied the electron scattering by the polycrystalline and monocrystalline. GaAs surface in the energy range of 0 to 9 eV. The FWHM of electron energy distribution function was 70 meV. (author).

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The micropulse lidar (MPL) is a ground-based optical remote sensing system designed primarily to determine the altitude of clouds overhead. The physical principle is the same as for radar. Pulses of energy are transmitted into the atmosphere; the energy scattered back to the transceiver is collected and measured as a time-resolved signal. From the time delay between each outgoing transmitted pulse and the backscattered signal, the distance to the scatterer is infered. Besides real-time detection of clouds, post-processing of the lidar return can also characterize the extent and properties of aerosol or other particle-laden regions.

International Nuclear Information System (INIS)

The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd_2Si layers. (Auth.).

International Nuclear Information System (INIS)

Compton backscattering of laser photons near the interaction point of an e"+e"- or e"-e"- collider can be used to produce a #gamma#-#gamma# or #gamma#-e"- collider. This paper describes the laser requirements, including pulse duration, intensity, energy, and wavelength, for such a collider. For most of the proposed, next generation, e"+e"- colliders, the laser wavelength should be in the near-infrared, with a pulse duration of 1 ps or less and an energy of similar 1 J per pulse. Current chirped pulse amplification laser systems in solid state lasing materials are well suited to meet these requirements. These systems are described. ((orig.)).

International Nuclear Information System (INIS)

The effect of a substrate on the results of measuring tantalum coating thickness in two-layer compositions according to gamma radiation scattered by the substrate is studied. It is shown that by means of an albedo-radiometer realizing the physical model absorber-scatterer one can determine the thickness (application uniformity) of tantalum coatings up to 150-300 #mu#m depending on the substrate material (plexiglas, aluminium, iron, copper). In case of testing coatings on substrates of alloys and high-alloy steels in order to ensure high accuracy of measrurement it is expedient with the above albedo-radiometer to determine the value of the backscattered radiation flux for the substrate before coating application.

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A new band gap profile (exponential profile) for the active layer of the a-SiGe:H single junction cell has been designed and experimentally demonstrated. By computer simulations we show how bending the grading of the band gap in the i-layer contributes to the enhancement of the carrier collection, improving the fill factor and efficiency. The differences observed between experiments and simulations are studied using Rutherford Backscattering Spectrometry (RBS). The results highlight weak points during the deposition process, whose control enables us to bring together experimental and computational results.

International Nuclear Information System (INIS)

Transmission nuclear resonance fluorescence measurements were made on targets consisting of Pb and depleted U with total areal densities near 86g/cm"2. The "2"3"8U content in the targets varied from 0% to 8.5% (atom fraction). The experiment demonstrates the capability of using transmission measurements as a non-destructive technique to identify and quantify the presence of an isotope in samples with thicknesses comparable to the average thickness of a nuclear fuel assembly. The experimental data also appear to demonstrate the process of notch refilling with a predictable intensity. Comparison of measured spectra to previous backscatter "2"3"8U measurements indicates general agreement in observed excited states. Evidence of two new "2"3"8U excited states and possibly a third state have also been observed.

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The advent, in the near future, of compact X-ray sources like Thomson Back-Scattering (TBS) will allow the clinical application of advanced X-ray imaging techniques, such as phase contrast, with higher sensitivity and lower impact in terms of dose delivery. In this work, we theoretically investigated the possibility of using such sources for phase contrast imaging of micro-calcifications included in a breast tissue. In our study we analyzed the phase and amplitude distribution of the TBS source and we showed that this source can be used for phase contrast imaging since the source coherence at the sample position is sufficiently high for achieving good contrast and micrometer spatial resolution. Indeed the spatial coherence of a TBS source is closer to that of a synchrotron radiation source, and much better than that of a laboratory source. Moreover, we showed the advantages of phase imaging with respect to standard absorption imaging, in the specific case of ...

International Nuclear Information System (INIS)

Reactively sputtered tantalum nitride (Ta_2N) has been investigated as a diffusion barrier between Pd_2Si and aluminum and CoSi_2 and Al. Ta_2N is found to be an excellent matallurgical diffusion barrier for the two systems up to 555 "0C, with no intermixing observed in Rutherford backscattering and Auger electron spectroscopic studies. Schottky barrier devices n-Si/Pd_2Si/Ta_2N/Al were excellent and showed no deterioration after annealing at 500 "0C. However, similar devices with CoSi_2 contacts and Ta_2N barrier showed a creation of high contact resistance between the silicide and the as-deposited nitride.

British Library Electronic Table of Contents (United Kingdom)

Bilayers of pure palladium and gold films were evaporated alternatively on (100) and (111) monocrystalline silicon substrates. After annealing, in a vacuum furnace from 100 to 650degreeC during 30min, the growth sequence of the Pd2Si and PdSi phases that evolved as the result of the diffusion reaction was examined by means of Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), whereas the surface morphology was investigated by scanning electron microscopy (SEM) technique. The effect of the intermediate gold layer is investigated in order to test its effectiveness as barrier for Cu and Si atoms interdiffusion and its influence on the morphology of the formed palladium silicides. The effect of substrate orientation on the palladium silicides growth and formation was also e...

International Nuclear Information System (INIS)

We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence '' hot '' implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900"oC up to 20-90 nm in those annealed at 1100"oC. For the samples annealed at 900"oC a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed. (author)

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).

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New values of the factors required to convert the reading of a radiation dosemeter calibrated in terms of air kerma (or exposure) into absorbed dose to water for medium-energy x-radiation were given in a code of practice published by the International Atomic Energy Agency in 1987. These are not considered to possess sufficient support from other sources. It is therefore recommended that the F-factors given or codes of practice should continue to be used. Values of backscatter factors for low-energy x-radiation (below 140 kV) in Supplement 17 of the British Journal of Radiology appear to be inaccurate. New values based on Monte Carlo calculations, and supported by new experimental data, are given for use in radiotherapy. (author).

Science.gov (United States)

The redistribution of implanted As and Sb following metal-silicide formation of Pt, Pd, and Ni has been studied. The phases of the silicides used were PtSi, Pd/sub 2/Si, and NiSi. Investigations with Rutherford backscattering analysis showed that after the formation of the silicides, the Sb was always found in the silicide layer near the surface of the samples, whereas PtSi and Pd/sub 2/Si caused a partial rejection of As for implanted doses of 2 x 10/sup 15/ cm/sup -2/ and higher. No rejection of As was found after the formation of NiSi. The results are discussed in terms of solid solubilities and impurity-metal compound formation. The data presented has implications in the fabrication of Ohmic contacts and the adjustments of the heights of Schottky barriers on silicon.

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The morphological aspects of ternary phase formation during the Pd-GaAs reaction have been studied by application of transmission electron microscopy (TEM) and Rutherford backscattering (RBS) techniques. The TEM images show that the first product phase, ''phase I'', forms during deposition of Pd onto (100) GaAs and exhibits the preferred orientation (0001)/sub I/ approx. // (01 anti 1)/sub GaAs/. In the presence of unreacted Pd, the second phase, ''phase II'', nucleates at large-angle grain boundaries in the phase I film as the annealing temperature increases above approx.250C. Energy dispersive analysis of x-rays and RBS suggest the nominal compositions Pd3GaAs and Pd4GaAs for phases I and II, respectively.

British Library Electronic Table of Contents (United Kingdom)

The total photoabsorption cross section on a free proton was measured at the GRAAL facility in the energy range E ? = 600?1500 MeV. The large-aperture LAGRAN?E detector and a liquid hydrogen target were used in the experiment performed with a back-scattered Compton gamma beam. To improve the accuracy, two alternative methods were employed. First, a subtraction method of using empty-target measurements allowed the cross section ? tot to be evaluated directly because of a low level of the electromagnetic background. Second, an algorithm for evaluating ? tot on the basis of summing the dominating partial cross sections was developed. Experimental results obtained for ? tot by the two methods are compared with existing data.

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Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni/sub 2/Si, while Si is the diffusing species in CrSi/sub 2/. In Pd/sub 2/Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems.

International Nuclear Information System (INIS)

By using megaelectronvolt "4He ion backscattering techniques and transmission electron microscopy, the authors have investigated the interactions of ion beams with thin film structures in a number of silicide-forming systems. The mixed layer was found to be an equilibrium compound for near-noble metals and an amorphous phase for refractory metals. Differences in behavior have also been observed in near-noble metal systems. For palladium, the Pd_2Si phase grew with ion dose and remained crystalline up to high dose. For nickel, the compound Ni_2Si was formed initially and became amorphous on prolonged irradiation. All the results indicate the significance of atomic mobility at target temperatures in determining the phase formation and in explaining the sensitivity of the silicides to ion bombardment. (Auth.).

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The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

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Compton backscattering of laser photons near the interaction point of an e{sup +}e{sup -} or e{sup -}e{sup -} collider can be used to produce a {gamma}-{gamma} or {gamma}-e{sup -} collider. This paper describes the laser requirements, including pulse duration, intensity, energy, and wavelength, for such a collider. For most of the proposed, next generation, e{sup +}e{sup -} colliders, the laser wavelength should be in the near-infrared, with a pulse duration of 1 ps or less and an energy of similar 1 J per pulse. Current chirped pulse amplification laser systems in solid state lasing materials are well suited to meet these requirements. These systems are described. ((orig.)).

Energy Technology Data Exchange (ETDEWEB)

Growth mechanisms and thermal stability of ion-beam-induced epitaxial Pd/sub 2/Si films are investigated using Rutherford backscattering and channelling techniques. Epitaxial growth of Pd/sub 2/Si films was observed at room temperature by argon ion implantation into as-deposited Pd/Si(111) structures and furnace-annealed Pd/sub 2/Si(polycrystalline)/Pd/sub 2/Si(epitaxial)/Si(111) structures. Some additional experiments to check the growth mechanisms are also presented, in which the implantation energies, substrate orientations and dose rates were changed. Finally, the stability of the ion-beam-induced epitaxial Pd/sub 2/Si films on subsequent furnace annealing is studied.

British Library Electronic Table of Contents (United Kingdom)

The grain morphology developed during solidification of an Al-4.5% Cu alloy is represented generally by columnar or equiaxed dendrites. Twinned feathery grains are found in the structure formed under certain heat and flow conditions during solidification. In this work, these conditions were achieved during solidification in a cavity under forced flow. Feathery grain formation is studied by means of fluid dynamics simulations with solidification included and by experiments. In order to determine the crystallographic orientation of feathery grains, electron backscattered diffraction measurements were performed. The growth features of feathery grains were analyzed by observations made normal and parallel to the growth direction. Some correlations between twinned feathery morphology, flow and ...

Science.gov (United States)

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

International Nuclear Information System (INIS)

We have investigated the diffusion of Sb in Si in the presence of defects injected by high-energy implantation of Si ions at room temperature. MeV ion implantation increases the concentrations of vacancies, which induce transient-enhanced diffusion of Sb deposited in Si. We observed a significant enhancement of Sb diffusion. Secondary ions mass spectroscopy has been performed on the implanted samples before and after annealing. Rutherford-backscattering spectrometry has been used to characterize the high-energy implantation damage. By fitting diffusion profiles to a linear diffusive model, information about atomic scale diffusion of Sb, i.e. the generation rate of mobile state Sb and its mean migration length were extracted.

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Evaporated palladium films of 45 nm thickness on Si(111) were irradiated using 78 keV Ar/sup +/ ions with doses in the range of 1 x 10/sup 15/ to 1.5 x 10/sup 16/ cm/sup -2/ for the purpose of studying silicide formation. Rutherford backscattering analysis shows that intermixing has occurred across the Pd-Si interface at room temperature. The mixing behaviour increases with increasing dose of the bombarding ions, which agrees well with a theoretical model of isotropic cascade mixing for palladium, and radiation-enhanced diffusion associated with an interstitial mechanism for silicon.

Science.gov (United States)

The US National Aeronautics and Space Administration (NASA) has been monitoring the ozone layer from space using optical remote sensing techniques since 1970. With concern over catalytic destruction of ozone (mid-1970s) and the development of the Antarctic ozone hole (mid-1980s), long term ozone monitoring has become the primary focus of NASA's series of ozone measuring instruments. A series of TOMS (Total Ozone Mapping Spectrometer) and SBUV (Solar Backscatter Ultraviolet) instruments has produced a nearly continuous record of global ozone from 1979 to the present. These instruments infer ozone by measuring sunlight backscattered from the atmosphere in the ultraviolet through differential absorption. These measurements have documented a 15 Dobson Unit drop in global average ozone since 1980, and the declines in ozone in the antarctic each October have been far more dramatic. Instruments that measure the ozone vertical distribution, the SBUV ...

International Nuclear Information System (INIS)

The crystallite size and orientation in molybdenum films prepared by magnetron sputtering at a low rate of typical 1 (angstrom)s and a pressure of 0.45 Pa was investigated by X-ray diffraction and texture analysis. The surface topography was studied using atomic force microscopy. Increasing the film thickness from 20 nm to 3 microm, the films show a turnover from a (110) fiber texture to a (211) mosaic-like texture. In the early state of growth (20 nm thickness) the development of dome-like structures on the surface is observed. The number of these structures increases with film thickness, whereas their size is weakly influenced. The effect of texture turnover is reduced by increasing the deposition rate by a factor of six, and it is absent for samples mounted above the center of the magnetron source. The effect of texture turnover is related to the bombardment of the films with high energetic argon neutrals resulting from backscattering at the target under oblique ...

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Stress corrosion cracking tests in constant extension rate tensile (CERT) and constant load tensile (CLT) tests were conducted on Ni-xCr- 9Fe-yC in Ar, water, and a LiOH-boric acid solution. Cr and C improve the resistance of Ni-base alloys to IG cracking in both Ar and water at 360C. Since creep plays a role in IG cracking, one possible explanation for the role of the environment involves its effect on the creep. Experiments were conducted on the role of C in the deformation behavior and failure mode of Ni-16Cr-9Fe. Constant load experiments were conducted on Ni-16Cr-9Fe to determine if the CLT test is more aggressive than CERT. The electron backscattering technique in a SEM is being developed in order to extend the IG cracking studies to grain sizes typical of commercial alloys, 20-30 microns.

Energy Technology Data Exchange (ETDEWEB)

SiO/sub 2//Si samples prepared in 2% and 4% HCl/O/sub 2/ mixtures at 1200/sup 0/C have been annealed in H/sub 2/O/N/sub 2/ ambients at 1200/sup 0/C. The anneals ranged up to 16 hrs in ambients with 4 or 40 ppM H/sub 2/O in N/sub 2/. Rutherford backscattering measurements have been made to determine the amount and location of Cl incorporated in these samples. A linear loss of Cl with annealing time is found for all samples. Changes in the distribution of Cl near the SiO/sub 2//Si interface are found. These changes are interpreted in terms of morphological changes in the third (Cl containing) phase. A significant effect of the H/sub 2/O content of the N/sub 2/ ambient is observed.

International Nuclear Information System (INIS)

Diffusion during He"+, Ne"+, and Xe"+ irradiations of trace amounts of Au in melt-spun amorphous Pd/sub 78/Cu_6Si/sub 16/ has been experimentally investigated. Diffusion constants were measured by following the changes in ion-implanted Au profiles with Rutherford-backscattering spectrometry. Heat treatments and simultaneous irradiations were performed as a function of temperature (533--588 K), ion flux, and ion mass. Total integrated fluences being very small, ion-beam-mixing effects are negligible. More than an order of magnitude enhancement in the diffusion was observed because of irradiations. This enhancement saturates at higher fluxes, the level being independent of ion mass, i.e., independent of collision-cascade parameters. Except at higher temperatures, where the enhancement decreases, the temperature dependence of the diffusion-saturation level is similar to that of the diffusion without irradiation. The data suggest that vacancylike defects play a ...

International Nuclear Information System (INIS)

A book has been written to introduce the physical aspects of the radiotherapy electron beam by presenting a summary of the developments in this field. The first chapter is a brief introduction to the technology of medical accelerators with emphasis on the electron beam production facilities. Chapter 2 describes the interaction processes at the atomic level once the electron beam enters the medium. Chapter 3 is concerned with the various properties of the electron beam purely from the clinical point of view. The electron beam algorithms and models for distribution calculations are covered in Chapter 4 with inclusion of age diffusion and multiple scattering approaches. The factors affecting the beam distribution in a patient, with inhomogeneities, surface irregularities, backscattering etc. are discussed in Chapter 5. The last two chapters are devoted to electron beam dosimetry including various dosimetric methods, specification and measurement of beam energy, ...

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The reactions between (100) GaAs and the near-noble metals Ni, Pd, and Pt have been investigated by application of high-resolution transmission electron microscopy (TEM), energy-dispersive analysis of x rays in the scanning TEM and Rutherford backscattering spectrometry. Emphasis is placed on the evolution of the phase distributions, film compositions, and interface morphologies during annealing at temperatures up to 480 /sup 0/C. The first phase in the Ni/GaAs reaction is shown to have the nominal composition Ni/sub 3/GaAs. Ternary phases of the type Pd/sub x/GaAs are also found to be the dominant products of the Pd/GaAs reaction. Conversely, only binary phases result from the Pt/GaAs reaction. These observations are used to construct isothermal sections of the M--Ga--As thin-film phase diagrams. The behavior of a thin (1--2 nm) native oxide--hydrocarbon layer during the Ni/GaAs, Pd/GaAs, and Pt/GaAs reactions is also investigated. Only the Ni/GaAs reaction is ...

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The traveling-wave mode in ring lasers is achieved by two methods: by a reversing mirror, and by using an intracavity nonreciprocal device. This paper is devoted to realization of the traveling-wave mode in a mode-locked YAG-Nd ring laser by a method proposed by Tomov et al. This method uses two intracavity Q-switches. In mode-locked operation, pulses are generated that can be considered short compared with the period of modulation T = L/C (where L is the length of the perimeter of the cavity). Analysis shows that if the shift of the switching signals corresponds to the time of travel of a light pulse between Q-switches, the pulse in one direction will pass the Q-switches at instants of zero losses, while losses in the other direction will be maximized for a distance between Q-switches of L/4, and will be zero for a distance L/2. Experimental verification of the proposed method gave unidirectional lasing with an intensity ratio in the two directions of at least 600:1, the intensity of ...

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Thin Fe and Ta layers of 30-45 nm thickness, deposited via magnetron sputtering on Si (1 0 0) substrates, were bombarded at room temperature with 100 keV Ar{sup 1+} or Ar{sup 8+} or with 250 keV Xe{sup 1+} or Xe{sup 19+} ions in order to test the influence of the ion charge state on the surface sputtering and interface mixing. The samples were characterized by means of Rutherford backscattering at 0.9-3.0 MeV {alpha}-particle energy, time-of-flight elastic recoil detection analysis with a 53 MeV {sup 127}I{sup 10+} beam and atomic force microscopy. No influence of the charge state on the sputtering and athermal mixing rate was observed in the case of the Ta/Si system. However, in the case of the Fe/Si system, the ion charge was observed to have an influence on the mixing rate.

International Nuclear Information System (INIS)

High aspect ratio sub-#mu#m periodic structures fabricated by focused ion beam (FIB) lithography have been characterised by Rutherford backscattering spectrometry (RBS) using the macrochannelling technique. The technique overcomes the limitations of complementary techniques such as scanning electron microscopy (SEM) and atomic force microscopy (AFM), which can provide images with sub-#mu#m resolution of just the surface features and not of the deep sub-surface structures, without destructive cross sectioning of the sample. Here RBS macrochannelling with a 2 MeV He"+ ion beam is used to analyse a diffraction grating fabricated by FIB milling an array of 100 nm wide trenches in a 300 nm thick Ag film on a Si substrate. Using the surface structure imaged by SEM and AFM as a starting point, a numerical model for the RBS spectrum from the grating is fitted to the experimental spectrum as a function of the sub-surface structure. This process allows the width of the ...

International Nuclear Information System (INIS)

The changes in the electrical and structural properties of metal-silicide films caused byion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi"2, NiSi"2 and Pd"2Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800_0C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi"2, NiSi"2 and Pd"2Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10_1_6 Ar-ions/cm_2, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd"2Si to PdSi was also observed in the high-temperature annealing of the implanted Pd"2Si films. (author).

International Nuclear Information System (INIS)

We consider the possibility of detecting a heavy Higgs boson (m_H>2m_Z) in proposed #gamma##gamma# colliders through the semileptonic mode #gamma##gamma##->#H#->#ZZ#->#q bar ql"+l-. We show that due to the nonmonochromatic nature of the photon beams produced by the laser-backscattering method, the resultant cross section for Higgs production is much smaller than the on-resonance cross section, and generally decreases with increasing collider energy. Although continuum ZZ production is expected to be negligible, we demonstrate the presence of, and calculate sizable backgrounds from, #gamma##gamma##->#l"+l-Z,q bar qZ, with Z#->#q bar q,l"+l-, respectively, and #gamma##gamma##->#t bar t#->#b bar bl"+l-#nu# bar #nu#. This channel may be used to detect a Higgs boson of mass m_H up to around 350 GeV at a 0.5 TeV e"+e- collider, assuming a nominal yearly luminosity of 10--20 fb"-"1.

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High quality Nb_3Sn films have been fabricated using a recently developed magnetron sputtering process capable of deposition rates approaching 1 #mu#m/min at sputtering voltages less than 500 V and power levels of about 5 KW. Low sputtering voltages allow more complete thermalization at lower pressures of the material condensing on the substrate which can improve long range order. Transition temperatures of up to 18.3"0K, J/sub c/(0)'s of 15 x 10"6 A/cm"2 and Hc_2 as high as 240 k0e have been achieved in 1-3 #mu#m films deposited from a Nb_3Sn reacted powder target with substrate temperatures between 600 and 800"0C. The films exhibit smooth surfaces and, generally, a (200) preferred orientation. The growth of the film is columnar in nature. The sputtering parameters, substrate material and temperature will be related to film structure, T/sub c/ and J/sub c/(H,T) and the Nb/Sn ratio as determined by Rutherford backscattering.

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A future e{sup -}-e{sup +} (electron-positron) linear collider can be configured with perhaps minimal modification to serve as an {gamma}-{gamma} (gamma-gamma) or a e{sup -}-{gamma} collider. This is accomplished by Compton-backscattering low energy photons (from a laser source) off of the high-energy electron beams prior to the crossing of the electron beams. However, to be competitive with the e{sup -}-e{sup +} configuration, the luminosity cannot be compromised in the process. This requires that the laser source deliver a sufficient number of photons per pulse with a pulse format and rate matching that of the electron beams. As it turns out, this requires an average optical power of 5-15 kW from the laser which is beyond the current state of the art. In this paper, we address how to generate the required pulse format and how the high average power requirement can be met with conventional laser technology. We also address concerns about the survivability of ...

Science.gov (United States)

This report summarizes the results obtained under a contract from 1974 to 1977, focusing on silicide formation of thin metal films on a Si substrate. The main thrust of the effort was directed at: (1) Development of the data base on thin-film silicide formation, and the investigation of the influence of the Si substrate on the silicide formation. When taken in context with results of other studies, the data obtained exhibit a clear pattern of behavior among the various metal films, but the detailed picture appears to be complex; (2) Development of marker experiments by ion-implanted Ar or Xe markers; (3) Clarification of the role played by oxygen contamination in silicide formation; (4) Stability of silicide layers; (5) Reaction of metal layers with SiO/sub 2/; (6) Electrical characteristics of Pd/sub 2/Si; and (7) A computer program was written to synthesize backscattering spectra for thin-film samples composed of successive layers of uniform thickness and ...

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For a given linac design, the dosimetric characteristics of a photon beam are determined uniquely by the energy and radial distributions of the electron beam striking the x-ray target. However, in the usual commissioning of a beam from measured data, a large number of variables can be independently tuned, making it difficult to derive a unique and self-consistent beam model. For example, the measured dosimetric penumbra in water may be attributed in various proportions to the lateral secondary electron range, the focal spot size and the transmission through the tips of a non-divergent collimator; the head-scatter component in the tails of the transverse profiles may not be easy to resolve from phantom scatter and head leakage; and the head-scatter tails corresponding to a certain extra-focal source model may not agree self-consistently with in-air output factors measured on the central axis. To reduce the number of adjustable variables in beam modelling, we replace the focal and ...

Science.gov (United States)

The efficiency of two thin-film diffusion barriers to be used in silicide/aluminum metallization schemes for silicon integrated circuits were evaluated. Control samples of Si/CoSi{sub 2}/Al and Si/Pd{sub 2}Si/Al, and test samples of Si/CoSi{sub 2}/Ta{sub 2}N/Al, Si/CoSi{sub 2}/W/Al and Si/Pd{sub 2}Si/Ta{sub 2}N/Al were used for sheet resistance, X-ray diffraction, Rutherford backscattering, and Auger-electron spectroscopic measurements. TEM studies were carried out on representative samples to examine the nature of the interfaces. Results from the analytical tests indicated that all three types of test samples are resistant to gross diffusion and intermixing of Co, Pd, Al and Si. They also showed that in the control samples, annealing causes interdiffusion of these species, necessitating the presence of a diffusion barrier. For test contacts, results demonstrated that although diffusion barriers may be successful in preventing metallurgical interdiffusion, they may ...

International Nuclear Information System (INIS)

Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type defects that form below the amorphous-crystalline interface during implantation. A dual implantation process was applied in an ...

Energy Technology Data Exchange (ETDEWEB)

Silicon on insulator (SOI) structures are promising candidates for the fabrication of VLSI circuits with very high packing densities. The preparation of such structures can now be achieved by high dose implantation of reactive ion species such as oxygen to produce buried layers of SiO/sub 2/ in silicon. In this paper we report experiments to depth profile these layered structures by SIMS. SOI samples have been prepared by implanting (100) silicon wafers with 400 keV molecular oxygen ions at a dose of 1.8x10/sup 18/ O/sup +/ cm/sup -2/. During the implantation the wafers were maintained at temperatures between 325 and 600/sup 0/C, using beam heating, which achieved in situ-annealing and ensured that the top silicon layer remained single crystal. Analysis was carried out on an Atomika DIDA-II spectrometer using 10 keV Ar/sup +/ ions with a low current density of less than 1 mA cm/sup -2/. During analysis negative secondary ions were monitored which provided a high detection sensitivity ...

Energy Technology Data Exchange (ETDEWEB)

An extensive series of pulse height measurements have been performed in partially depleted Si surface barrier detectors, using various heavy ions (Li, B, C, O, Al and Cl), at energies between 5 and 70 MeV. After correcting for the small energy loss of the incident ions in traversing the gold surface barrier layer of the detector and for the residual nuclear stopping, the resulting pulse heights per MeV for the various heavy ions were found to be up to 2.5% larger than for the {sup 241}Am (5.486 MeV) alpha particle. This increase, although significant, is smaller than had been anticipated from an extrapolation of the earlier study of H, He and Li pulse heights by Lennard et al.. A new method of analysis of pulse height data, which significantly reduces the uncertainties associated with the dead layer energy loss and nuclear stopping corrections, was used in order to determine directly the variation of the average energy for electron-hole pair creation with increasing particle stopping ...

Science.gov (United States)

An x-ray diffraction approach has been developed for determination of the kinetics of growth of Pd/sub 2/Si layers. Epitaxial Pd/sub 2/Si films were grown on Si(111) substrates over a temperature range of 160-222/sup 0/C by a solid-state reaction between the substrates and the Pd overlayers. The parabolic rate equation was verified and rate constants showed Arrhenius behavior with an activation energy E/sub a/ = 1.06 eV and prefactor k/sub 0/ = 7 x 10/sup -4/ cm/sup 2//s. The low value of E/sub a/ suggests a short-circuit diffusion mechanism. It is reasonable to expect that impurities and microstructure may play important roles in the growth process. Impurity levels in the specimens were evaluated by analytic techniques suited to thin-film study: Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Auger electron spectrometry. No impurities were present at concentrations approaching 1 at. %. Some O, C, and F were detected at the Pd/sub ...

International Nuclear Information System (INIS)

The compositions of passive films formed on Fe-17Fr-13Ni (at. %) and Fe-18.5Cr-14Ni-1.5Mo (100) single crystals have been determined and the structure of the alloy under the film has been investigated. The alloys were passivated in 0.05M H_2SO_4 at 250 mV/SHE for 30 min. The oxygen content was measured by nuclear microanalysis using the "1"6O(d,p) "1"7O* reaction. The oxygen content in the passive film is similar for the two alloys and equal to (12#+-#2) 10"1"5 O/cm"2. The cationic compositions of the passive films have been determined by "4He channeling at two incident beam energies: 0.8 and 2.0 MeV. For the two alloys studied, a total cation content of (5#+-#2)10"1"5 at/cm"2 is found in the passive films. The corresponding thickness is about 12 A. There is an excess of oxygen, which can be attributed to the presence of hydroxyls and sulfate. A strong chromium enrichment is found in the passive film formed on both alloys: chromium represents about 50% of the cations. There is no ...

International Nuclear Information System (INIS)

In this report, I surveyed physics potential of the #gamma##gamma# option of a linear e"+e"- collider with the following questions in mind: What new discovery can be expected at a #gamma##gamma# collider in addition to what will be learned at its 'parent' e"+e"- linear collider? By taking account of the hard energy spectrum and polarization of colliding photons, produced by Compton back-scattering of laser light off incoming e"- beams, we find that a #gamma##gamma# collider is most powerful when new physics appears in the neutral spin-zero channel at an invariant mass below about 80% of the c.m. energy of the colliding e"-e"- system. If a light Higgs boson exists, its properties can be studied in detail, and if its heavier partners or a heavy Higgs boson exists in the above mass range, they may be discovered at a #gamma##gamma# collider. CP property of the scalar sector can be explored in detail by making use of linear polarization of the colliding photons, decay ...

Science.gov (United States)

Energetic ions interact with materials by collisions with the nuclei and electrons of the atoms that make up the material. In these collisions energy and momentum is transferred from the projectile particle which is a moving atom or ion, to the target particles (atomic nucleus or electron). Each collision leads to a slowing down of the moving projectile and also a deflection of the trajectory which gives rise to the term scattering which is often used synonymously to describe the energy transfer process. In this chapter, we introduce from an experimental viewpoint the underlying theory for interaction of ions for analysis and modification of nanometer scale materials. A more detailed theoretical overview of the topic can be found in the recent monographs by Sigmund. Detailed derivations of the formulae introduced will not be given here but can be found in standard texts that are indicated by references. The treatment here starts by considering an individual scattering event. The ...

International Nuclear Information System (INIS)

A next generation e"+-e"- linear collider in the TeV range can be converted into a #gamma#-#gamma# collider by converting it to e"--e"- operation and then generating #gamma#-rays via Compton backscattering with optical beams. This provides unique access to some areas of fundamental physics as well as highly desirable redundancy to the collisions. The required optical beam (with a wavelength of about 1 micron) must have very high peak power, (about 1 TW) as well as average power (about 10 kW). To achieve a 1 : 1 conversion from an electron to #gamma#-quantum, each micropulse must contain about one Joule and must be about one picosecond long, the micropulse peak power being about one Terawatt. To match the electron beam pulse structure, a macropulse consists of a sequence of about one hundred micropulses separated by about one nanosecond, and the macropulses am repeated at a rate of about 100 Hz. Thus, the time average power is about 10 kW propose and analyze a ...

Energy Technology Data Exchange (ETDEWEB)

NIF target diagnostics are being developed to observe and measure the extreme physics of targets irradiated by the 192-beam laser. The response time of target materials can be on the order of 100ps--the time it takes light to travel 3 cm--temperatures more than 100 times hotter than the surface of the sun, and pressures that exceed 109 atmospheres. Optical and x-ray diagnostics were developed and fielded to observe and record the results of the first 4-beam experiments at NIF. Hard and soft x-ray spectra were measured, and time-integrated and gated x-ray images of hydrodynamics experiments were recorded. Optical diagnostics recorded backscatter from the target, and VISAR laser velocimetry measurements were taken of laser-shocked target surfaces. Additional diagnostics are being developed and commissioned to observe and diagnose ignition implosions, including various neutron and activation diagnostics. NIF's diagnostics are being developed at LLNL and with ...

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The motivation of this work is to develop high reflectance normal-incidence multilayer mirrors in the 8-12 nm wavelength region for applications in astronomy and extreme ultraviolet lithography. To achieve this goal, Mo/Sr and Mo/Y multilayers were studied. These multilayers were deposited with a UHV magnetron sputtering system and their reflectances were measured with synchrotron radiation. High normal-incidence reflectances of 23% at 8.8 nm, 40.8% at 9.4 nm, and 48.3% at 10.5 nm were achieved. However, the reflectance of Mo/Sr multilayers decreased rapidly after exposure to air. Attempts to use thin layers of carbon to passivate the surface of Mo/Sr multilayers were unsuccessful. Experimental results on the refractive index {tilde n} = 1-{delta} + i{beta} of yttrium and molybdenum in the 50-1300 eV energy region are reported in this work. This is the first time ever that values on the refractive index of yttrium are measured in this energy range. The absorption part {beta} was ...

Energy Technology Data Exchange (ETDEWEB)

TiO{sub 2} is a vital material in several technologies including, photocatalysis, gas sensing, biomaterials and optical coatings. Among the several crystal structures of this oxide, rutile has the highest density and microhardness, the highest index of refraction and the highest temperature stability. The processing of dense polycrystalline materials often includes the addition of a liquid-forming phase at higher temperatures. This technique is known as liquid-phase sintering and has been studied extensively. Rutile boundaries containing an amorphous phase have been used to study boundary migration and grain-boundary grooving. Visible-light (VLM), scanning electron (SEM) and transmission electron microscopy (TEM) in addition to electron-backscatter diffraction (EBSD) and a focused-ion beam (FIB) tool were used to characterize boundary migration in rutile. EBSD analysis was carried out on a Philips XL30 FEG SEM equipped with a DigiView 1612 high-resolution, ...