Nanosized graphene sheets enhanced photoelectric behavior of carbon film on p-silicon substrate

International Nuclear Information System (INIS)

Yang, Lei; Hu, Gaijuan; Zhang, Dongqing; Diao, Dongfeng

2016-01-01

We found that nanosized graphene sheets enhanced the photoelectric behavior of graphene sheets embedded carbon (GSEC) film on p-silicon substrate, which was deposited under low energy electron irradiation in electron cyclotron resonance plasma. The GSEC/p-Si photodiode exhibited good photoelectric performance with photoresponsivity of 206 mA/W, rise and fall time of 2.2, and 4.3 μs for near-infrared (850 nm) light. The origin of the strong photoelectric behavior of GSEC film was ascribed to the appearance of graphene nanosheets, which led to higher barrier height and photoexcited electron-collection efficiency. This finding indicates that GSEC film has the potential for photoelectric applications.

Experimental investigation into the coupling effects of magnetic field, temperature and pressure on electrical resistivity of non-oriented silicon steel sheet

Science.gov (United States)

Xiao, Lijun; Yu, Guodong; Zou, Jibin; Xu, Yongxiang

2018-05-01

In order to analyze the performance of magnetic device which operate at high temperature and high pressure, such as submersible motor, oil well transformer, the electrical resistivity of non-oriented silicon steel sheets is necessary for precise analysis. But the reports of the examination of the measuring method suitable for high temperature up to 180 °C and high pressure up to 140 MPa are few. In this paper, a measurement system based on four-probe method and Archimedes spiral shape measurement specimens is proposed. The measurement system is suitable for measuring the electrical resistivity of unconventional specimens under high temperature and high pressure and can simultaneously consider the influence of the magnetic field on the electrical resistivity. It can be seen that the electrical resistivity of the non-oriented silicon steel sheets will fluctuate instantaneously when the magnetic field perpendicular to the conductive path of the specimens is loaded or removed. The amplitude and direction of the fluctuation are not constant. Without considering the effects of fluctuations, the electrical resistivity of the non-oriented silicon steel sheets is the same when the magnetic field is loaded or removed. And the influence of temperature on the electrical resistivity of the non-oriented silicon steel sheet is still the greatest even though the temperature and the pressure are coupled together. The measurement results also show that the electrical resistivity varies linearly with temperature, so the temperature coefficient of resistivity is given in the paper.

A bioactive metallurgical grade porous silicon-polytetrafluoroethylene sheet for guided bone regeneration applications.

Science.gov (United States)

Chadwick, E G; Clarkin, O M; Raghavendra, R; Tanner, D A

2014-01-01

The properties of porous silicon make it a promising material for a host of applications including drug delivery, molecular and cell-based biosensing, and tissue engineering. Porous silicon has previously shown its potential for the controlled release of pharmacological agents and in assisting bone healing. Hydroxyapatite, the principle constituent of bone, allows osteointegration in vivo, due to its chemical and physical similarities to bone. Synthetic hydroxyapatite is currently applied as a surface coating to medical devices and prosthetics, encouraging bone in-growth at their surface and improving osseointegration. This paper examines the potential for the use of an economically produced porous silicon particulate-polytetrafluoroethylene sheet for use as a guided bone regeneration device in periodontal and orthopaedic applications. The particulate sheet is comprised of a series of microparticles in a polytetrafluoroethylene matrix and is shown to produce a stable hydroxyapatite on its surface under simulated physiological conditions. The microstructure of the material is examined both before and after simulated body fluid experiments for a period of 1, 7, 14 and 30 days using Scanning Electron Microscopy. The composition is examined using a combination of Energy Dispersive X-ray Spectroscopy, Thin film X-ray diffraction, Attenuated Total Reflectance-Fourier Transform Infrared Spectroscopy and the uptake/release of constituents at the fluid-solid interface is explored using Inductively Coupled Plasma-Optical Emission Spectroscopy. Microstructural and compositional analysis reveals progressive growth of crystalline, 'bone-like' apatite on the surface of the material, indicating the likelihood of close bony apposition in vivo.

Meltwater storage in low-density near-surface bare ice in the Greenland ice sheet ablation zone

Science.gov (United States)

Cooper, Matthew G.; Smith, Laurence C.; Rennermalm, Asa K.; Miège, Clément; Pitcher, Lincoln H.; Ryan, Jonathan C.; Yang, Kang; Cooley, Sarah W.

2018-03-01

We document the density and hydrologic properties of bare, ablating ice in a mid-elevation (1215 m a.s.l.) supraglacial internally drained catchment in the Kangerlussuaq sector of the western Greenland ice sheet. We find low-density (0.43-0.91 g cm-3, μ = 0.69 g cm-3) ice to at least 1.1 m depth below the ice sheet surface. This near-surface, low-density ice consists of alternating layers of water-saturated, porous ice and clear solid ice lenses, overlain by a thin (sheet ablation zone surface. A conservative estimate for the ˜ 63 km2 supraglacial catchment yields 0.009-0.012 km3 of liquid meltwater storage in near-surface, porous ice. Further work is required to determine if these findings are representative of broader areas of the Greenland ice sheet ablation zone, and to assess the implications for sub-seasonal mass balance processes, surface lowering observations from airborne and satellite altimetry, and supraglacial runoff processes.

A Meteorological Experiment in the Melting Zone of the Greenland Ice Sheet

NARCIS (Netherlands)

Oerlemans, J.; Vugts, H.F.

1993-01-01

Preliminary results are described from a glaciometeorological experiment carried out in the margin (melting zone) of the Greenland ice sheet in the summers of 1990 and 1991. This work was initiated within the framework of a Dutch research program on land ice and sea level change. Seven

Simultaneous electron-proton irradiation of crucible grown and float-zone silicon solar cells

International Nuclear Information System (INIS)

Bernard, J.

1974-01-01

The realisation of an irradiation chamber which permits simultaneous irradiations by electrons, protons, photons and in-situ measurements of solar cells main parameters (diffusion length, I.V. characteristics) is described. Results obtained on 20 solar cells n/p 10Ωcm made in silicon pulled crystals and 20 solar cells n/p 10Ωcm made in silicon float-zone simultaneously irradiated with electrons and photons are given [fr

Crystal growth for high-efficiency silicon solar cells workshop: Summary

Science.gov (United States)

Dumas, K. A.

1985-01-01

The state of the art in the growth of silicon crystals for high-efficiency solar cells are reviewed, sheet requirements are defined, and furture areas of research are identified. Silicon sheet material characteristics that limit cell efficiencies and yields were described as well as the criteria for the ideal sheet-growth method. The device engineers wish list to the material engineer included: silicon sheet with long minority carrier lifetime that is uniform throughout the sheet, and which doesn't change during processing; and sheet material that stays flat throughout device processing, has uniform good mechanical strength, and is low cost. Impurities in silicon solar cells depreciate cell performance by reducing diffusion length and degrading junctions. The impurity behavior, degradation mechanisms, and variations in degradation threshold with diffusion length for silicon solar cells were described.

Laser-zone Growth in a Ribbon-to-ribbon (RTR) Process Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Solar Array Project

Science.gov (United States)

Baghdadi, A.; Gurtler, R. W.; Legge, R.; Sopori, B.; Rice, M. J.; Ellis, R. J.

1979-01-01

A technique for growing limited-length ribbons continually was demonstrated. This Rigid Edge technique can be used to recrystallize about 95% of the polyribbon feedstock. A major advantage of this method is that only a single, constant length silicon ribbon is handled throughout the entire process sequence; this may be accomplished using cassettes similar to those presently in use for processing Czochralski waters. Thus a transition from Cz to ribbon technology can be smoothly affected. The maximum size being considered, 3 inches x 24 inches, is half a square foot, and will generate 6 watts for 12% efficiency at 1 sun. Silicon dioxide has been demonstrated as an effective, practical diffusion barrier for use during the polyribbon formation.

Layer disturbances and the radio-echo free zone in ice sheets

Directory of Open Access Journals (Sweden)

R. Drews

2009-08-01

Full Text Available Radio-echo sounding of the Antarctic and Greenlandic ice sheets often reveals a layer in the lowest hundreds of meters above bedrock more or less free of radio echoes, known as the echo-free zone (EFZ. The cause of this feature is unclear, so far lacking direct evidence for its origin. We compare echoes around the EPICA drill site in Dronning Maud Land, Antarctica, with the dielectric properties, crystal orientation fabrics and optical stratigraphy of the EPICA-DML ice core. We find that echoes disappear in the depth range where the dielectric contrast is blurred, and where the coherency of the layers in the ice core is lost due to disturbances caused by the ice flow. At the drill site, the EFZ onset at ~2100 m marks a boundary, below which the ice core may have experienced flow induced disturbances on various scales. The onset may indicate changing rheology which needs to be accounted for in the modeling of ice sheet dynamics.

Formation of shallow boron emitters in crystalline silicon using flash lamp annealing: Role of excess silicon interstitials

Energy Technology Data Exchange (ETDEWEB)

Riise, Heine Nygard, E-mail: h.n.riise@fys.uio.no; Azarov, Alexander; Svensson, Bengt G.; Monakhov, Edouard [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P. O. Box 1048 Blindern, N-0316 Oslo (Norway); Schumann, Thomas; Hübner, Renè; Skorupa, Wolfgang [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P. O. Box 510119, 01314 Dresden (Germany)

2015-07-13

Shallow, Boron (B)-doped p{sup +} emitters have been realized using spin-on deposition and Flash Lamp Annealing (FLA) to diffuse B into monocrystalline float zone Silicon (Si). The emitters extend between 50 and 140 nm in depth below the surface, have peak concentrations between 9 × 10{sup 19 }cm{sup –3} and 3 × 10{sup 20 }cm{sup –3}, and exhibit sheet resistances between 70 and 3000 Ω/□. An exceptionally large increase in B diffusion occurs for FLA energy densities exceeding ∼93 J/cm{sup 2} irrespective of 10 or 20 ms pulse duration. The effect is attributed to enhanced diffusion of B caused by Si interstitial injection following a thermally activated reaction between the spin-on diffusant film and the silicon wafer.

Acoustic Gravity Waves Generated by an Oscillating Ice Sheet in Arctic Zone

Science.gov (United States)

Abdolali, A.; Kadri, U.; Kirby, J. T., Jr.

2016-12-01

We investigate the formation of acoustic-gravity waves due to oscillations of large ice blocks, possibly triggered by atmospheric and ocean currents, ice block shrinkage or storms and ice-quakes.For the idealized case of a homogeneous weakly compressible water bounded at the surface by ice sheet and a rigid bed, the description of the infinite family of acoustic modes is characterized by the water depth h and angular frequency of oscillating ice sheet ω ; The acoustic wave field is governed by the leading mode given by: Nmax=\\floor {(ω h)/(π c)} where c is the sound speed in water and the special brackets represent the floor function (Fig1). Unlike the free-surface setting, the higher acoustic modes might exhibit a larger contribution and therefore all progressive acoustic modes have to be considered.This study focuses on the characteristics of acoustic-gravity waves generated by an oscillating elastic ice sheet in a weakly compressible fluid coupled with a free surface model [Abdolali et al. 2015] representing shrinking ice blocks in realistic sea state, where the randomly oriented ice sheets cause inter modal transition and multidirectional reflections. A theoretical solution and a 3D numerical model have been developed for the study purposes. The model is first validated against the theoretical solution [Kadri, 2016]. To overcome the computational difficulties of 3D models, we derive a depth-integrated equation valid for spatially varying ice sheet thickness and water depth. We show that the generated acoustic-gravity waves contribute significantly to deep ocean currents compared to other mechanisms. In addition, these waves travel at the sound speed in water carrying information on ice sheet motion, providing various implications for ocean monitoring and detection of ice-quakes. Fig1:Snapshots of dynamic pressure given by an oscillating ice sheet; h=4500m, c=1500m/s, semi-length b=10km, ζ =1m, omega=π rad/s. Abdolali, A., Kirby, J. T. and Bellotti, G

Temperature effects on the magnetic properties of silicon-steel sheets using standardized toroidal frame.

Science.gov (United States)

Wu, Cheng-Ju; Lin, Shih-Yu; Chou, Shang-Chin; Tsai, Chia-Yun; Yen, Jia-Yush

2014-01-01

This study designed a detachable and standardized toroidal test frame to measure the electromagnetic characteristic of toroidal laminated silicon steel specimens. The purpose of the design was to provide the measurements with standardized and controlled environment. The device also can withstand high temperatures (25-300°C) for short time period to allow high temperature tests. The accompanying driving circuit facilitates testing for high frequency (50-5,000 Hz) and high magnetic flux (0.2-1.8 T) conditions and produces both sinusoidal and nonsinusoidal test waveforms. The thickness of the stacked laminated silicon-steel sheets must be 30~31 mm, with an internal diameter of 72 mm and an outer diameter of 90 mm. With the standardized setup, it is possible to carry out tests for toroidal specimen in high temperature and high flux operation. The test results show that there is a tendency of increased iron loss under high temperature operation. The test results with various driving waveforms also provide references to the required consideration in engineering designs.

Vacuum die casting of silicon sheet for photovoltaic applications. First quarterly report, March 16-June 30, 1979

Energy Technology Data Exchange (ETDEWEB)

None

1979-01-01

The obtective of this program is to develop a vacuum die-casting process for producing silicon sheet suitable for photovoltaic cells and to develop production techniques for optimization of polycrystallie silicon solar cell output. Efforts will examine process methods which are directed toward minimum cost processing of silicon into a quality suitable for producing solar cells with a terrestrial efficiency greater than 12% and having the potential to be scaled for large quantity production. In the vacuum die casting technique, silicon is melted under vacuum, and an evacuated die with a thin rectangular cavity is inserted into the melt. Liquid silicon is then injected into the die using a positive pressure of an inert gas. The major portion of the die casting work will be performed at Stanford Research Institute International under subcontract. The initial approach will follow parallel tracks: (1) obtain mechanical design parameters by using boron nitride, which has been shown to be non-wetting to silicon; (2) optimize silicon nitride material composition and coatings by sessile drop experiments; (3) test effectiveness of fluoride salt interfacial media with a graphite mold; and (4) test effect of surface finish using both boron nitride and graphite. Having established the material and mechanical boundary conditions, a finalized version of the prototype assembly will be constructed and the casting varibles determined. Polycrystalline silicon solar cells, with and without impurities, will be fabricated, characterized, and optimized at ARCCO Solar. The major activities will focus on the use of Wacker SILCO, HEM and in-house materials until vacuum die cast wafers are available. A baseline process with vacuum metallized contacts will be established and a reference mass production process with screen-printed metallization and high-throughput diffusions will also be obtained.

Towards graphite-free hot zone for directional solidification of silicon

Science.gov (United States)

Dropka, Natasha; Buchovska, Iryna; Herrmann-Geppert, Iris; Klimm, Detlef; Kiessling, Frank M.; Degenhardt, Ulrich

2018-06-01

The reduction of SiC, Si3N4 and transition metals impurities in directionally solidified Si ingots poses one of the crucial challenges in the solar cells production. Particularly strong contamination comes from the graphite parts in the hot zone. Therefore, we selected three massive ceramic materials to replace graphite, developed the novel design of the crucible support and cover and compared the crystals grown in them with ingots from the standard graphite design. The experiments were performed for phosphorus n-doped silicon of G0 size. The ingots were compared with respect to O- and C-content, metal impurities, resistivity and lifetime. The superior performance of TiC relative to other ceramics was observed, particularly due to the lower concentration of substitutional carbon in Si ingot (up to 2.6 times) and the higher minority carrier lifetime of (up to 4.4 times) with narrow red zones.

Tribology study of reduced graphene oxide sheets on silicon substrate synthesized via covalent assembly.

Science.gov (United States)

Ou, Junfei; Wang, Jinqing; Liu, Sheng; Mu, Bo; Ren, Junfang; Wang, Honggang; Yang, Shengrong

2010-10-19

Reduced graphene oxide (RGO) sheets were covalently assembled onto silicon wafers via a multistep route based on the chemical adsorption and thermal reduction of graphene oxide (GO). The formation and microstructure of RGO were analyzed by X-ray photoelectron spectroscopy (XPS), attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, Raman spectroscopy, and water contact angle (WCA) measurements. Characterization by atomic force microscopy (AFM) was performed to evaluate the morphology and microtribological behaviors of the samples. Macrotribological performance was tested on a ball-on-plate tribometer. Results show that the assembled RGO possesses good friction reduction and antiwear ability, properties ascribed to its intrinsic structure, that is, the covalent bonding to the substrate and self-lubricating property of RGO.

Low cost monocrystalline silicon sheet fabrication for solar cells by advanced ingot technology

Science.gov (United States)

Fiegl, G. F.; Bonora, A. C.

1980-01-01

The continuous liquid feed (CLF) Czochralski furnace and the enhanced I.D. slicing technology for the low-cost production of monocrystalline silicon sheets for solar cells are discussed. The incorporation of the CLF system is shown to improve ingot production rate significantly. As demonstrated in actual runs, higher than average solidification rates (75 to 100 mm/hr for 150 mm 1-0-0 crystals) can be achieved, when the system approaches steady-state conditions. The design characteristics of the CLF furnace are detailed, noting that it is capable of precise control of dopant impurity incorporation in the axial direction of the crystal. The crystal add-on cost is computed to be $11.88/sq m, considering a projected 1986 25-slice per cm conversion factor with an 86% crystal growth yield.

Continuous Czochralski growth: Silicon sheet growth development of the large area sheet task of the low cost silicon solar array project

Science.gov (United States)

Johnson, C. M.

1980-12-01

The growth of 100 kg of silicon single crystal material, ten cm in diameter or greater, and 150 kg of silicon single crystal material 15 cm or greater utilizing one common silicon container material (one crucible) is investigated. A crystal grower that is recharged with a new supply of polysilicon material while still under vacuum and at temperatures above the melting point of silicon is developed. It accepts large polysilicon charges up to 30 kg, grows large crystal ingots (to 15 cm diameter and 25 kg in weight), and holds polysilicon material for recharging (rod or lump) while, at the same time, growing crystal ingots. Special equipment is designed to recharge polysilicon rods, recharge polysilicon lumps, and handle and store large, hot silicon crystal ingots. Many continuous crystal growth runs were performed lasting as long as 109 hours and producing as many as ten crystal ingots, 15 cm with weights progressing to 27 kg.

Stable configurations of graphene on silicon

Energy Technology Data Exchange (ETDEWEB)

Javvaji, Brahmanandam; Shenoy, Bhamy Maithry [Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012 (India); Mahapatra, D. Roy, E-mail: droymahapatra@aero.iisc.ernet.in [Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012 (India); Ravikumar, Abhilash [Department of Metallurgical and Materials Engineering, National Institute of Technology Karnataka, Surathkal 575025 (India); Hegde, G.M. [Center for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012 (India); Rizwan, M.R. [Department of Metallurgical and Materials Engineering, National Institute of Technology Karnataka, Surathkal 575025 (India)

2017-08-31

Highlights: • Simulations of epitaxial growth process for silicon–graphene system is performed. • Identified the most favourable orientation of graphene sheet on silicon substrate. • Atomic local strain due to the silicon–carbon bond formation is analyzed. - Abstract: Integration of graphene on silicon-based nanostructures is crucial in advancing graphene based nanoelectronic device technologies. The present paper provides a new insight on the combined effect of graphene structure and silicon (001) substrate on their two-dimensional anisotropic interface. Molecular dynamics simulations involving the sub-nanoscale interface reveal a most favourable set of temperature independent orientations of the monolayer graphene sheet with an angle of ∽15° between its armchair direction and [010] axis of the silicon substrate. While computing the favorable stable orientations, both the translation and the rotational vibrations of graphene are included. The possible interactions between the graphene atoms and the silicon atoms are identified from their coordination. Graphene sheet shows maximum bonding density with bond length 0.195 nm and minimum bond energy when interfaced with silicon substrate at 15° orientation. Local deformation analysis reveals probability distribution with maximum strain levels of 0.134, 0.047 and 0.029 for 900 K, 300 K and 100 K, respectively in silicon surface for 15° oriented graphene whereas the maximum probable strain in graphene is about 0.041 irrespective of temperature. Silicon–silicon dimer formation is changed due to silicon–carbon bonding. These results may help further in band structure engineering of silicon–graphene lattice.

Phosphorus diffusion in float zone silicon crystal growth

DEFF Research Database (Denmark)

Larsen, Theis Leth

2000-01-01

This Ph.D thesis encompasses a global numerical simulation of the needle-eye oat zone process, used to grow silicon single crystals. The numerical models includes coupled electromagnetic and free surface models and a global heat transfer model, with moving boundaries. An axisymmetric uidow model......, including centrifugal, buoyancy, thermocapillary and electromagnetic forces, is used to determine flow field, after the phase boundaries have been determined, by the heat transfer model. A finite element model for calculating dopant transport, using the calculated unsteady flow field, has been developed...... within this project. This model has furthermore been expanded to two equations coupled by a non-zero right hand side, for simulating transport of point defects in the crystal during growth. Free surface shapes and induced electric surface current are calculated for t wo different 4'' congurations and a 0...

Tearing resistance of some co-polyester sheets

International Nuclear Information System (INIS)

Kim, Ho Sung; Karger-Kocsis, Jozsef

2004-01-01

A three-zone model consisting of initial, evolutionary and stabilised plastic zones for tearing resistance was proposed for polymer sheets. An analysis with the model, based on the essential work of fracture (EWF) approach, was demonstrated to be capable for predicting specific total work of fracture along the tear path across all the plastic zones although accuracy of specific essential work of fracture is subject to improvement. Photo-elastic images were used for identification of plastic deformation sizes and profiles. Fracture mode change during loading was described in relation with the three zones. Tearing fracture behaviour of extruded mono- and bi-layer sheets of different types of amorphous co-polyesters and different thicknesses was investigated. Thick material exhibited higher specific total work of tear fracture than thin mono-layer sheet in the case of amorphous polyethylene terephthalate (PET). This finding was explained in terms of plastic zone size formed along the tear path, i.e., thick material underwent larger plastic deformation than thin material. When PET and polyethylene terephthalate glycol (PETG) were laminated with each other, specific total work of fracture of the bi-layer sheets was not noticeably improved over that of the constituent materials

Microstructure and texture evolution of ultra-thin grain-oriented silicon steel sheet fabricated using strip casting and three-stage cold rolling method

Energy Technology Data Exchange (ETDEWEB)

Song, Hong-Yu; Liu, Hai-Tao, E-mail: liuht@ral.neu.edu.cn; Wang, Yin-Ping; Wang, Guo-Dong

2017-03-15

A 0.1 mm-thick grain-oriented silicon steel sheet was successfully produced using strip casting and three-stage cold rolling method. The microstructure, texture and inhibitor evolution during the processing was briefly analyzed. It was found that Goss texture was absent in the hot rolled sheet because of the lack of shear deformation. After normalizing, a large number of dispersed MnS precipitates with the size range of 15–90 nm were produced. During first cold rolling, dense shear bands were generated in the deformed ferrite grains, resulting in the intense Goss texture after first intermediate annealing. The microstructure was further refined and homogenized during the subsequent cold rolling and annealing processes. After primary recrystallization annealing, a homogeneous microstructure consisting of fine and equiaxed grains was produced while the associated texture was characterized by a strong γ-fiber texture. Finally, a complete secondary recrystallization microstructure consisting of entirely large Goss grains was produced. The magnetic induction B{sub 8} and iron loss P{sub 10/400} was 1.79 T and 6.9 W/kg, respectively. - Highlights: • Ultra-thin grain-oriented silicon steel was produced by strip casting process. • Microstructure, texture and inhibitor evolution was briefly investigated. • Goss texture was absent in primary recrystallization annealed sheet. • MnS precipitates with a size range of 15–90 nm formed after normalizing. • A complete secondary recrystallization microstructure was produced.

Silicon Ingot Casting - Heat Exchanger Method Multi-wire Slicing - Fixed Abrasive Slicing Technique. Phase 3 Silicon Sheet Growth Development for the Large Area Sheet Task of the Low-cost Solar Array Project

Science.gov (United States)

Schmid, F.; Khattak, C. P.

1979-01-01

Several 20 cm diameter silicon ingots, up to 6.3 kg. were cast with good crystallinity. The graphite heat zone can be purified by heating it to high temperatures in vacuum. This is important in reducing costs and purification of large parts. Electroplated wires with 45 um synthetic diamonds and 30 um natural diamonds showed good cutting efficiency and lifetime. During slicing of a 10 cm x 10 cm workpiece, jerky motion occurred in the feed and rocking mechanisms. This problem is corrected and modifications were made to reduce the weight of the bladeheat by 50%.

Efficient 3D conducting networks built by graphene sheets and carbon nanoparticles for high-performance silicon anode.

Science.gov (United States)

Zhou, Xiaosi; Yin, Ya-Xia; Cao, An-Min; Wan, Li-Jun; Guo, Yu-Guo

2012-05-01

The utilization of silicon particles as anode materials for lithium-ion batteries is hindered by their low intrinsic electric conductivity and large volume changes during cycling. Here we report a novel Si nanoparticle-carbon nanoparticle/graphene composite, in which the addition of carbon nanoparticles can effectively alleviate the aggregation of Si nanoparticles by separating them from each other, and help graphene sheets build efficient 3D conducting networks for Si nanoparticles. Such Si-C/G composite shows much improved electrochemical properties in terms of specific capacity and cycling performance (ca. 1521 mA h g(-1) at 0.2 C after 200 cycles), as well as a favorable high-rate capability.

Buffer Zone Fact Sheets

Science.gov (United States)

New requirements for buffer zones and sign posting contribute to soil fumigant mitigation and protection for workers and bystanders. The buffer provides distance between the pesticide application site and bystanders, reducing exposure risk.

Petrophysical characterization of the hydrothermal root zone in the sheeted dike complex from IODP Hole 1256D.

Science.gov (United States)

Violay, M.; Pezard, P. A.; Ildefonse, B.; Belghoul, A.; Mainprice, D.

2009-04-01

IODP (Integrated Ocean Drilling Program.) Site 1256 is located on the Cocos Plate in the Eastern Equatorial Pacific Ocean. It samples 15 Ma-old oceanic lithosphere that was formed at the EPR during a period of superfast spreading rate (> 200mm/yr). Drilling operations at Site 1256 were conducted during three ODP and IODP expeditions, and reached for the first time gabbros below the sheeted dike complex in Hole 1256D. This offers a unique opportunity to study in situ the fossil root zone of the sheeted dike complex in present-day oceanic crust. This zone is a boundary layer between the magmatic system of the melt lens (around 1100 °C), and the overlying high temperature hydrothermal system (≤ 450 °C). This boundary layer during crustal accretion is critical to our understanding of crustal processes along mid-ocean ridges. This work focuses on the petrophysical characterization of the root zone. Physical properties were determined from downhole geophysical profiles and images, and from laboratory petrophysical measurements from 21 minicores. Dikes, granoblastic dikes and gabbros testify to an important hydrothermal circulation in the vicinity of the magmatic lens. Porosity is primarily controlled by sample initial texture, hydrothermal alteration, and recrystallization processes. Green schist facies alteration of basalts is associated to relatively higher porosity values (≈ 2%) and a very variable organization of the pore space, as revealed by electrical properties. The electrical formation factor in diabase is high and variable (920 to 6087). Granoblastic dikes are characterized by locally recrystallized texture with Cpx and Opx (granulite facies) and little alteration at low temperature. The recrystallization induces abrupt decrease in porosity (fairly constant porosity, which likely consist mostly in microcracks. Crack density increases linearly with depth from 0.02 in diabase to 0.08 in gabbros. It is consistent with a fissural porosity (crack aspect ratio

Characterization of Czochralski Silicon Detectors

OpenAIRE

Luukka, Panja-Riina; Haerkoenen, Jaakko

2012-01-01

This thesis describes the characterization of irradiated and non-irradiated segmenteddetectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It isshown that the radiation hardness (RH) of the protons of these detectors is higher thanthat of devices made of traditional materials such as Float Zone (FZ) silicon or DiffusionOxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 x1017 cm-3). The MCZ devices therefore present an interesting alter...

Studies of the sensitivity dependence of float zone silicon diodes on gamma absorbed dose

International Nuclear Information System (INIS)

Pascoalino, K.C.S.; Santos, T.C. dos; Barbosa, R.F.; Camargo, F. de; Goncalves, J.A.C.; Bueno, C.C.

2011-01-01

Full text: Several advantages of silicon diodes which include small size, low cost, high sensitivity and wide availability, make them suitable for dosimetry and for radiation field mapping. However, the small radiation tolerance of ordinary silicon devices has imposed constraints on their application in intense radiation fields such as found in industrial radiation processes. This scenario has been changed with the development of radiation hard silicon devices to be used as track detectors in high-energy physics experiments. Particularly, in this work it is presented the dosimetric results obtained with a batch of nine junction silicon diodes developed, in the framework of CERN RD50 Collaboration, as good candidates for improved radiation hardness. These diodes were produced with 300 micrometer n-type silicon substrate grown by standard float zone technique and processed by the Microelectronics Center of Helsinki University of Technology. The samples irradiation was performed using a Co-60 irradiator (Gammacell 220) which delivers a dose-rate of 2 kGy/h. During the irradiation, the unbiased diodes were connected through low-noise coaxial cables to the input of a KEITHLEY 617 electrometer, in order to monitor the devices photocurrent as a function of the exposure time. To study the response uniformity of the batch of nine diodes as well the sensitivity dependence on the absorbed dose, they were irradiated with different doses from 5 kGy up to 50 kGy. The sensitivity response of each device was investigated through the on-line measurements of the current signals as a function of the exposure time. For doses up to 5 kGy, all diodes exhibited a current decay of almost six percent in comparison with the value registered at the start-time of the irradiation. However, this decrease in the current sensitivity is much smaller than those observed with ordinary diodes for the same absorbed dose. The dose-response curves of the devices were also investigated through the plot

Utility of Vaccum Pressed Silicon Sheet as a Bite Raising Appliance in the Management of TMJ Dysfunction Syndrome.

Science.gov (United States)

Datarkar, Abhay; Daware, Surendra; Dande, Ravi

2017-09-01

Temporomandibular disorders (TMDs) represent a group of painful conditions involving the muscles of mastication and the temporomandibular joint (TMJ) that frequently encountered in general clinical practice. This study is designed to assess the utility of vacuum pressed silicon sheet as a bite raising appliance in the management of TMJ dysfunction syndrome. The patients for this study were selected from those with the chief complaint of TMJ disorder. Out of 200 patients, 104 patients were diagnosed with subluxation and 96 patients were diagnosed with internal derangement of temporomandibular joint. All the reported cases were managed conservatively with physiotherapy and muscle relaxant therapy for one week period and followed with silicon bite raising appliance over both the arches in the subsequent period. All the patients had pain relief within six months duration as graded over verbal analog scale. ANOVA scale was used for comparision of VAS scores. The use of vacuum pressed bite raising appliance in the management of TMJ disorder was found to be satisfactorily effective in alleviation of pain symptom in our study group.

Reprogramming hMSCs morphology with silicon/porous silicon geometric micro-patterns.

Science.gov (United States)

Ynsa, M D; Dang, Z Y; Manso-Silvan, M; Song, J; Azimi, S; Wu, J F; Liang, H D; Torres-Costa, V; Punzon-Quijorna, E; Breese, M B H; Garcia-Ruiz, J P

2014-04-01

Geometric micro-patterned surfaces of silicon combined with porous silicon (Si/PSi) have been manufactured to study the behaviour of human Mesenchymal Stem Cells (hMSCs). These micro-patterns consist of regular silicon hexagons surrounded by spaced columns of silicon equilateral triangles separated by PSi. The results show that, at an early culture stage, the hMSCs resemble quiescent cells on the central hexagons with centered nuclei and actin/β-catenin and a microtubules network denoting cell adhesion. After 2 days, hMSCs adapted their morphology and cytoskeleton proteins from cell-cell dominant interactions at the center of the hexagonal surface. This was followed by an intermediate zone with some external actin fibres/β-catenin interactions and an outer zone where the dominant interactions are cell-silicon. Cells move into silicon columns to divide, migrate and communicate. Furthermore, results show that Runx2 and vitamin D receptors, both specific transcription factors for skeleton-derived cells, are expressed in cells grown on micropatterned silicon under all observed circumstances. On the other hand, non-phenotypic alterations are under cell growth and migration on Si/PSi substrates. The former consideration strongly supports the use of micro-patterned silicon surfaces to address pending questions about the mechanisms of human bone biogenesis/pathogenesis and the study of bone scaffolds.

Characterization of Czochralski silicon detectors

OpenAIRE

Luukka, Panja-Riina

2006-01-01

This thesis describes the characterization of irradiated and non-irradiated segmented detectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It is shown that the radiation hardness (RH) of the protons of these detectors is higher than that of devices made of traditional materials such as Float Zone (FZ) silicon or Diffusion Oxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 × 1017 cm−3). The MCZ devices therefore present an interesting ...

Low cost silicon-on-ceramic photovoltaic solar cells

Science.gov (United States)

Koepke, B. G.; Heaps, J. D.; Grung, B. L.; Zook, J. D.; Sibold, J. D.; Leipold, M. H.

1980-01-01

A technique has been developed for coating low-cost mullite-based refractory substrates with thin layers of solar cell quality silicon. The technique involves first carbonizing one surface of the ceramic and then contacting it with molten silicon. The silicon wets the carbonized surface and, under the proper thermal conditions, solidifies as a large-grained sheet. Solar cells produced from this composite silicon-on-ceramic material have exhibited total area conversion efficiencies of ten percent.

Behavior of Particle Depots in Molten Silicon During Float-Zone Growth in Strong Magnetic Fields

Science.gov (United States)

Jauss, T.; Croell, A.; SorgenFrei, T.; Azizi, M.; Reimann, C.; Friedrich, J.; Volz, M. P.

2014-01-01

Solar cells made from directionally solidified silicon cover 57% of the photovoltaic industry's market [1]. One major issue during directional solidification of silicon is the precipitation of foreign phase particles. These particles, mainly SiC and Si3N4, are precipitated from the dissolved crucible coating, which is made of silicon nitride, and the dissolution of carbon monoxide from the furnace atmosphere. Due to their hardness and size of several hundred micrometers, those particles can lead to severe problems during the wire sawing process for wafering the ingots. Additionally, SiC particles can act as a shunt, short circuiting the solar cell. Even if the particles are too small to disturb the wafering process, they can lead to a grit structure of silicon micro grains and serve as sources for dislocations. All of this lowers the yield of solar cells and reduces the performance of cells and modules. We studied the behaviour of SiC particle depots during float-zone growth under an oxide skin, and strong static magnetic fields. For high field strengths of 3T and above and an oxide layer on the sample surface, convection is sufficiently suppressed to create a diffusive like regime, with strongly dampened convection [2, 3]. To investigate the difference between atomically rough phase boundaries and facetted growth, samples with [100] and [111] orientation were processed.

Three-dimensional modelling of thermal stress in floating zone silicon crystal growth

Science.gov (United States)

Plate, Matiss; Krauze, Armands; Virbulis, Jānis

2018-05-01

During the growth of large diameter silicon single crystals with the industrial floating zone method, undesirable level of thermal stress in the crystal is easily reached due to the inhomogeneous expansion as the crystal cools down. Shapes of the phase boundaries, temperature field and elastic material properties determine the thermal stress distribution in the solid mono crystalline silicon during cylindrical growth. Excessive stress can lead to fracture, generation of dislocations and altered distribution of intrinsic point defects. Although appearance of ridges on the crystal surface is the decisive factor of a dislocation-free growth, the influence of these ridges on the stress field is not completely clear. Here we present the results of thermal stress analysis for 4” and 5” diameter crystals using a quasi-stationary three dimensional mathematical model including the material anisotropy and the presence of experimentally observed ridges which cannot be addressed with axis-symmetric models. The ridge has a local but relatively strong influence on thermal stress therefore its relation to the origin of fracture is hypothesized. In addition, thermal stresses at the crystal rim are found to increase for a particular position of the crystal radiation reflector.

Temporomandibular joint arthroplasty for osteoarthrosis: A series of 24 patients that received a uni- or bilateral inter-positional silicone sheet.

Science.gov (United States)

Boutault, F; Cavallier, Z; Lauwers, F; Prevost, A

2018-06-01

To evaluate mid-term results from using a silicone sheet for inter-positional arthroplasty in moderate or severe cases of osteoarthrosis of the temporo-mandibular joint (TMJ). To also determine any remaining indications from this method. This retrospective study included patients that underwent surgery between 2008 and 2016. Pre- and post-operative mouth opening (MO), according to inter-incisal distance (mm) and pain score (PS: 0=no pain to 4=very severe pain) were recorded for 24 patients. Patients were divided according to thickness of the silicone sheet (group A: 1.0 mm, group B: 1.5 mm). The cohort included 22 females (92%). Mean age at surgery was 55 years±13 (26-80). Mean length of follow-up was 26 months±24 (6-80). Mean improvement in MO was 8.2 mm (+33%) and of PS was 1.7 (-68%). MO was not improved for two patients and worsened for one. PS score improved for all patients. No statistical difference was found between groups A and B. There was also a tendency for degradation of outcomes over time. The poor reputation of prosthetic discoplasty was not as evident in our series, even though anatomical and functional status seemed to deteriorate over time. This is because total-joint prosthetic replacement is often proposed instead. However, for elderly or fragile patients that have severe pain, and regarding cost-benefit aspects, conventional arthroplasty can still be discussed, especially since French national health-care insurance does not yet support TMJ prosthetic replacement for osteoarthrosis. Copyright © 2018 Elsevier Masson SAS. All rights reserved.

Dacitic ash-flow sheet near Superior and Globe, Arizona

Science.gov (United States)

Peterson, Donald W.

1961-01-01

Remnants of a dacitic ash-flow sheet near Globe, Miama, and Superia, Arizona cover about 100 square miles; before erosion the area covered by the sheet was at least 400 square miles and perhaps as much as 1,500 square miles. Its maximum thickness is about 2,000 feet, its average thickness is about 500 feet, and its original volume was at least 40 cubic miles. It was erupted on an eroded surface with considerable relief. The main part of the deposit was thought by early workers to be a lava flow. Even after the distinctive character of welded tuffs and related rocks was discovered, the nature and origin of this deposit remained dubious because textures did not correspond to those in other welded tuff bodies. Yet a lava flow as silicic as this dacite would be viscous instead of spreading out as an extensive sheet. The purpose of this investigation has been to study the deposit, resolve the inconsistencies, and deduce its origin and history. Five stratigraphic zones are distinguished according to differences in the groundmass. From bottom to top the zones are basal tuff, vitrophyre, brown zone, gray zone, and white zone. The three upper zones are distinguished by colors on fresh surfaces, for each weathers to a similar shade of light reddish brown. Nonwelded basal tuff grades upward into the vitrophyre, which is a highly welded tuff. The brown and gray zones consist of highly welded tuff with a lithoidal groundmass. Degree of welding decreases progressively upward through the gray and the white zones, and the upper white zone is nonwelded. Textures are clearly outlined in the lower part of the brown zone, but upward they become more diffuse because of increasing devitrification. In the white zone, original textures are essentially obliterated, and the groundmass consists of spherulites and microcrystalline intergrowths. The chief groundmass minerals are cristobalite and sanidine, with lesser quartz and plagioclase. Phenocrysts comprise about 40 percent of the rock

How robust are in situ observations for validating satellite-derived albedo over the dark zone of the Greenland Ice Sheet?

Science.gov (United States)

Ryan, J.; Hubbard, A., II; Irvine-Fynn, T. D.; Doyle, S. H.; Cook, J.; Stibal, M.; Smith, L. C.; Box, J. E.

2017-12-01

Calibration and validation of satellite-derived ice sheet albedo data require high-quality, in situ measurements commonly acquired by up and down facing pyranometers mounted on automated weather stations (AWS). However, direct comparison between ground and satellite-derived albedo can only be justified when the measured surface is homogeneous at the length-scale of both satellite pixel and in situ footprint. We used digital imagery acquired by an unmanned aerial vehicle to evaluate point-to-pixel albedo comparisons across the western, ablating margin of the Greenland Ice Sheet. Our results reveal that in situ measurements overestimate albedo by up to 0.10 at the end of the melt season because the ground footprints of AWS-mounted pyranometers are insufficient to capture the spatial heterogeneity of the ice surface as it progressively ablates and darkens. Statistical analysis of 21 AWS across the entire Greenland Ice Sheet reveals that almost half suffer from this bias, including some AWS located within the wet snow zone.

Process research on non-CZ silicon material

Science.gov (United States)

1982-01-01

High risk, high payoff research areas associated with he process for producing photovoltaic modules using non-CZ sheet material are investigated. All investigations are being performed using dendritic web silicon, but all processes are directly applicable to other ribbon forms of sheet material. The technical feasibility of forming front and back junctions in non-CZ silicon using liquid dopant techniques was determined. Numerous commercially available liquid phosphorus and boron dopant solutions are investigated. Temperature-time profiles to achieve N(+) and P(+) sheet resistivities of 60 + or - 10 and 40 + or - s10 ohms per square centimeter respectively are established. A study of the optimal method of liquid dopant application is performed. The technical feasibility of forming a liquid applied diffusion mask to replace the more costly chemical vapor deposited SiO2 diffusion mask was also determined.

Denuded zone in Czochralski silicon wafer with high carbon content

International Nuclear Information System (INIS)

Chen Jiahe; Yang Deren; Ma Xiangyang; Que Duanlin

2006-01-01

The thermal stability of the denuded zone (DZ) created by high-low-high-temperature annealing in high carbon content (H[C]) and low carbon content (L[C]) Czochralski silicon (Cz-Si) has been investigated in a subsequent ramping and isothermal 1050 deg. C annealing. The tiny oxygen precipitates which might occur in the DZ were checked. It was found in the L[C] Cz-Si that the DZ shrank and the density of bulk micro-defects (BMDs) reduced with the increase of time spent at 1050 deg. C. Also, the DZs above 15 μm of thickness present in the H[C] Cz-Si wafers continuously and the density and total volume of BMDs first decreased then increased and finally decreased again during the treatments. Moreover, tiny oxygen precipitates were hardly generated inside the DZs, indicating that H[C] Cz-Si wafers could support the fabrication of integrated circuits

Denuded zone in Czochralski silicon wafer with high carbon content

Science.gov (United States)

Chen, Jiahe; Yang, Deren; Ma, Xiangyang; Que, Duanlin

2006-12-01

The thermal stability of the denuded zone (DZ) created by high-low-high-temperature annealing in high carbon content (H[C]) and low carbon content (L[C]) Czochralski silicon (Cz-Si) has been investigated in a subsequent ramping and isothermal 1050 °C annealing. The tiny oxygen precipitates which might occur in the DZ were checked. It was found in the L[C] Cz-Si that the DZ shrank and the density of bulk micro-defects (BMDs) reduced with the increase of time spent at 1050 °C. Also, the DZs above 15 µm of thickness present in the H[C] Cz-Si wafers continuously and the density and total volume of BMDs first decreased then increased and finally decreased again during the treatments. Moreover, tiny oxygen precipitates were hardly generated inside the DZs, indicating that H[C] Cz-Si wafers could support the fabrication of integrated circuits.

The seasonal cycle and interannual variability of surface energy balance and melt in the ablation zone of the west Greenland ice sheet

NARCIS (Netherlands)

van den Broeke, M.R.; Smeets, C.J.P.P.; van de Wal, R.S.W.

2011-01-01

We present the seasonal cycle and interannual variability of the surface energy balance (SEB) in the ablation zone of the west Greenland ice sheet, using seven years (September 2003–August 2010) of hourly observations from three automatic weather stations (AWS). The AWS are situated along the 67◦ N

Carbon nanotube-coated silicone as a flexible and electrically conductive biomedical material

International Nuclear Information System (INIS)

Matsuoka, Makoto; Akasaka, Tsukasa; Totsuka, Yasunori; Watari, Fumio

2012-01-01

Artificial cell scaffolds that support cell adhesion, growth, and organization need to be fabricated for various purposes. Recently, there have been increasing reports of cell patterning using electrical fields. We fabricated scaffolds consisting of silicone sheets coated with single-walled (SW) or multi-walled (MW) carbon nanotubes (CNTs) and evaluated their electrical properties and biocompatibility. We also performed cell alignment with dielectrophoresis using CNT-coated sheets as electrodes. Silicone coated with 10 μg/cm 2 SWCNTs exhibited the least sheet resistance (0.8 kΩ/sq); its conductivity was maintained even after 100 stretching cycles. CNT coating also improved cell adhesion and proliferation. When an electric field was applied to the cell suspension introduced on the CNT-coated scaffold, the cells became aligned in a pearl-chain pattern. These results indicate that CNT coating not only provides electro-conductivity but also promotes cell adhesion to the silicone scaffold; cells seeded on the scaffold can be organized using electricity. These findings demonstrate that CNT-coated silicone can be useful as a biocompatible scaffold. - Highlights: ► We fabricated a CNT-coated silicone which has conductivity and biocompatibility. ► The conductivity was maintained after 100 cycles of stretching. ► CNT coatings enabled C2C12 cells adhere to the silicone surface. ► Cells were aligned with dielectrophoresis between CNT-coated silicone surfaces.

Effect of Temperature and Sheet Temper on Isothermal Solidification Kinetics in Clad Aluminum Brazing Sheet

Science.gov (United States)

Benoit, Michael J.; Whitney, Mark A.; Wells, Mary A.; Winkler, Sooky

2016-09-01

Isothermal solidification (IS) is a phenomenon observed in clad aluminum brazing sheets, wherein the amount of liquid clad metal is reduced by penetration of the liquid clad into the core. The objective of the current investigation is to quantify the rate of IS through the use of a previously derived parameter, the Interface Rate Constant (IRC). The effect of peak temperature and initial sheet temper on IS kinetics were investigated. The results demonstrated that IS is due to the diffusion of silicon (Si) from the liquid clad layer into the solid core. Reduced amounts of liquid clad at long liquid duration times, a roughened sheet surface, and differences in resolidified clad layer morphology between sheet tempers were observed. Increased IS kinetics were predicted at higher temperatures by an IRC model as well as by experimentally determined IRC values; however, the magnitudes of these values are not in good agreement due to deficiencies in the model when applied to alloys. IS kinetics were found to be higher for sheets in the fully annealed condition when compared with work-hardened sheets, due to the influence of core grain boundaries providing high diffusivity pathways for Si diffusion, resulting in more rapid liquid clad penetration.

Weld Repair of Thin Aluminum Sheet

Science.gov (United States)

Beuyukian, C. S.; Mitchell, M. J.

1986-01-01

Weld repairing of thin aluminum sheets now possible, using niobium shield and copper heat sinks. Refractory niobium shield protects aluminum adjacent to hole, while copper heat sinks help conduct heat away from repair site. Technique limits tungsten/inert-gas (TIG) welding bombardment zone to melt area, leaving surrounding areas around weld unaffected. Used successfully to repair aluminum cold plates on Space Shuttle, Commercial applications, especially in sealing fractures, dents, and holes in thin aluminum face sheets or clad brazing sheet in cold plates, heat exchangers, coolers, and Solar panels. While particularly suited to thin aluminum sheet, this process also used in thicker aluminum material to prevent surface damage near weld area.

Efficient tunable luminescence of SiGe alloy sheet polymers

International Nuclear Information System (INIS)

Vogg, G.; Meyer, A. J.-P.; Miesner, C.; Brandt, M. S.; Stutzmann, M.

2001-01-01

Crystalline SiGe alloy sheet polymers were topotactically prepared from epitaxially grown calcium germanosilicide Ca(Si 1-x Ge x ) 2 precursor films in the whole composition range. These polygermanosilynes are found to be a well-defined mixture of the known siloxene and polygermyne sheet polymers with the OH groups exclusively bonded to silicon. The optical properties determined by photoluminescence and optical reflection measurements identify the mixed SiGe sheet polymers as direct semiconductors with efficient luminescence tunable in the energy range between 2.4 and 1.3 eV. [copyright] 2001 American Institute of Physics

Floating Silicon Method

Energy Technology Data Exchange (ETDEWEB)

Kellerman, Peter

2013-12-21

The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

New techniques used to realize silicon photocells

International Nuclear Information System (INIS)

Siffert, P.

1978-01-01

The techniques used to realize the terrestrial silicon solar cells being considered the possible improvements of these methods are discussed. The various approaches under development to prepare silicon sheets in a continuous way are considered for both self-supporting or substrate deposited layers. Finally, the various methods used or under investigation to obtain the surface potential barrier are considered; MIS, heterojunction and ion implantation [fr

Role of Firing Temperature, Sheet Resistance, and Contact Area in Contact Formation on Screen-Printed Metal Contact of Silicon Solar Cell

Science.gov (United States)

Ahmad, Samir Mahmmod; Leong, Cheow Siu; Sopian, K.; Zaidi, Saleem H.

2018-03-01

Formation of an Ohmic contact requires a suitable firing temperature, appropriate doping profile, and contact dimensions within resolution limits of the screen-printing process. In this study, the role of the peak firing temperature in standard rapid thermal annealing (RTA) six-zone conveyor belt furnace (CBF) and two inexpensive alternate RTA systems [a custom-designed, three-zone, 5″-diameter quartz tube furnace (QTF) and a tabletop, 3″-diameter rapid thermal processing (RTP)] has been investigated. In addition, the role of sheet resistance and contact area in achieving low-resistance ohmic contacts has been examined. Electrical measurements of ohmic contacts between silver paste/ n +-emitter layer with varying sheet resistances and aluminum paste/ p-doped wafer were carried out in transmission line method configuration. Experimental measurements of the contact resistivity ( ρ c) exhibited the lowest values for CBF at 0.14 mΩ cm2 for Ag and 100 mΩ cm2 for Al at a peak firing temperature of 870°C. For the QTF configuration, lowest measured contact resistivities were 3.1 mΩ cm2 for Ag and 74.1 mΩ cm2 for Al at a peak firing temperature of 925°C. Finally, for the RTP configuration, lowest measured contact resistivities were 1.2 mΩ cm2 for Ag and 68.5 mΩ cm2 for Al at a peak firing temperature of 780°C. The measured contact resistivity exhibits strong linear dependence on sheet resistance. The contact resistivity for Ag decreases with contact area, while for Al the opposite behavior is observed.

The intrinsic gettering in neutron irradiation Czochralski-silicon

CERN Document Server

Li Yang Xian; Niu Ping Juan; Liu Cai Chi; Xu Yue Sheng; Yang Deren; Que Duan Lin

2002-01-01

The intrinsic gettering in neutron irradiated Czochralski-silicon is studied. The result shows that a denuded zone at the surface of the neutron irradiated Czochralski-silicon wafer may be formed through one-step short-time annealing. The width of the denuded zone is dependent on the annealing temperature and the dose of neutron irradiation, while it is irrelated to the annealing time in case the denuded zone is formed. The authors conclude that the interaction between the defects induced by neutron irradiation and the oxygen in the silicon accelerates the oxygen precipitation in the bulk, and becomes the dominating factor of the quick formation of intrinsic gettering. It makes the effect of thermal history as the secondary factor

Large area sheet task. Advanced dendritic web growth development. [silicon films

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Hopkins, R. H.; Meier, D.; Frantti, E.; Schruben, J.

1981-01-01

The development of a silicon dendritic web growth machine is discussed. Several refinements to the sensing and control equipment for melt replenishment during web growth are described and several areas for cost reduction in the components of the prototype automated web growth furnace are identified. A circuit designed to eliminate the sensitivity of the detector signal to the intensity of the reflected laser beam used to measure melt level is also described. A variable speed motor for the silicon feeder is discussed which allows pellet feeding to be accomplished at a rate programmed to match exactly the silicon removed by web growth.

Heat Exchanger Tube to Tube Sheet Joints Corrosion Behavior

Directory of Open Access Journals (Sweden)

M. Iancu

2013-03-01

Full Text Available Paper presents the studies made by the authors above the tube to tube sheet fittings of heat exchanger with fixed covers from hydrofining oil reforming unit. Tube fittings are critical zones for heat exchangers failures. On a device made from material tube and tube sheet at real joints dimensions were establish axial compression force and traction force at which tube is extracted from expanded joint. Were used two shapes joints with two types of fittings surfaces, one with smooth hole of tube sheet and other in which on boring surface we made a groove. From extracted expanded tube zones were made samples for corrosion tests in order to establish the corrosion rate, corrosion potential and corrosion current in working mediums such as hydrofining oil and industrial water at different temperatures. The corrosion rate values and the temperature influence are important to evaluate joints durability and also the results obtained shows that the boring tube sheet shape with a groove on hole tube shape presents a better corrosion behavior then the shape with smooth hole tube sheet.

Modeling sheet-flow sand transport under progressive surface waves

NARCIS (Netherlands)

Kranenburg, Wouter

2013-01-01

In the near-shore zone, energetic sea waves generate sheet-flow sand transport. In present day coastal models, wave-induced sheet-flow sand transport rates are usually predicted with semi-empirical transport formulas, based on extensive research on this phenomenon in oscillatory flow tunnels.

Continuous Czochralski Growth. Silicon Sheet Growth Development of the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project

Science.gov (United States)

Merz, F.

1979-01-01

During the reporting period, a successful 100 kilogram run was performed. Six ingots of 13 cm diameter were grown, ranging in size from 15.5 kg to 17.7 kg. Melt replenishment methods included both poly rod and lump feed material. Samples from each ingot were prepared for solar cell fabrication and analyses, impurity analysis, and structural studies. The furnace was converted to the 14-inch hot zone and preliminary heat runs were performed. Two sucessful runs were demonstrated, by growing 25 kg ingots from 30 kg melts. Also, a 100 kg run was attempted, utilizing the 14 inch crucible hot zone, but was prematurely terminated due to excessive monoxide which accumulated on the viewports and a seed failure.

LSSA large area silicon sheet task continuous Czochralski process development

Science.gov (United States)

Rea, S. N.

1978-01-01

A Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a premelter to provide molten silicon flow into the primary crucible. The basic furnace is operational and several trial crystals were grown in the batch mode. Numerous premelter configurations were tested both in laboratory-scale equipment as well as in the actual furnace. The best arrangement tested to date is a vertical, cylindrical graphite heater containing small fused silicon test tube liner in which the incoming silicon is melted and flows into the primary crucible. Economic modeling of the continuous Czochralski process indicates that for 10 cm diameter crystal, 100 kg furnace runs of four or five crystals each are near-optimal. Costs tend to asymptote at the 100 kg level so little additional cost improvement occurs at larger runs. For these conditions, crystal cost in equivalent wafer area of around $20/sq m exclusive of polysilicon and slicing was obtained.

Behavior of Particle Depots in Molten Silicon During Float-Zone Growth in Strong Static Magnetic Fields

Science.gov (United States)

Jauss, T.; SorgenFrei, T.; Croell, A.; Azizi, M.; Reimann, C.; Friedrich, J.; Volz, M. P.

2014-01-01

In the photovoltaics industry, the largest market share is represented by solar cells made from multicrystalline silicon, which is grown by directional solidification. During the growth process, the silicon melt is in contact with the silicon nitride coated crucible walls and the furnace atmosphere which contains carbon monoxide. The dissolution of the crucible coating, the carbon bearing gas, and the carbon already present in the feedstock, lead to the precipitation of silicon carbide, and silicon nitride, at later stages of the growth process. The precipitation of Si3N4 and SiC particles of up to several hundred micrometers in diameter leads to severe problems during the wire sawing process for wafering the ingots. Furthermore the growth of the silicon grains can be negatively influenced by the presence of particles, which act as nucleation sources and lead to a grit structure of small grains and are sources for dislocations. If doped with Nitrogen from the dissolved crucible coating, SiC is a semi conductive material, and can act as a shunt, short circuiting parts of the solar cell. For these reasons, the incorporation of such particles needs to be avoided. In this contribution we performed model experiments in which the transport of intentionally added SiC particles and their interaction with the solid-liquid interface during float zone growth of silicon in strong steady magnetic fields was investigated. SiC particles of 7µm and 60µm size are placed in single crystal silicon [100] and [111] rods of 8mm diameter. This is achieved by drilling a hole of 2mm diameter, filling in the particles and closing the hole by melting the surface of the rod until a film of silicon covers the hole. The samples are processed under a vacuum of 1x10(exp -5) mbar or better, to prevent gas inclusions. An oxide layer to suppress Marangoni convection is applied by wet oxidation. Experiments without and with static magnetic field are carried out to investigate the influence of melt

Silylated functionalized silicon-based composite as anode with excellent cyclic performance for lithium-ion battery

Science.gov (United States)

Li, Xiao; Tian, Xiaodong; Yang, Tao; Wang, Wei; Song, Yan; Guo, Quangui; Liu, Zhanjun

2018-05-01

Inferior cycling stability and rate performance respectively caused by rigorous volume change and poor electrical conductivity were the main challenge of state-of-the-art Silicon-based electrode. In this work, silylated functionalized exfoliated graphite oxide (EGO)/silicon@amorphous carbon (3-APTS-EGO/Si@C) was synthesized by adopting silane as intermediate to connect Si particles with EGO sheets followed by introduction of amorphous carbon. The result suggested that 3-Aminopropyltriethoxysilan connected the EGO sheets and Si nanoparticles via covalent bonds. Owing to the strong covalent interaction and the synergistic effect between the silicon, EGO sheets and amorphous carbon, 3-APTS-EGO/Si@C composite possessed a high capacity of 774 mAh g-1 even after 450 cycles at 0.4 A g-1 with the retention capacity of 97%. This work also provided an effective strategy to improve the long cycling life performance of Si-based electrode.

Silicon microfabricated beam expander

Science.gov (United States)

Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

2015-03-01

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

Silicon microfabricated beam expander

International Nuclear Information System (INIS)

Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

2015-01-01

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed

Silicon microfabricated beam expander

Energy Technology Data Exchange (ETDEWEB)

Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

2015-03-30

The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

Formation of hypereutectic silicon particles in hypoeutectic Al-Si alloys under the influence of high-intensity ultrasonic vibration

Directory of Open Access Journals (Sweden)

Xiaogang Jian

2013-03-01

Full Text Available The modification of eutectic silicon is of general interest since fine eutectic silicon along with fine primary aluminum grains improves mechanical properties and ductilities. In this study, high intensity ultrasonic vibration was used to modify the complex microstructure of aluminum hypoeutectic alloys. The ultrasonic vibrator was placed at the bottom of a copper mold with molten aluminum. Hypoeutectic Al-Si alloy specimens with a unique in-depth profile of microstructure distribution were obtained. Polyhedral silicon particles, which should form in a hypereutectic alloy, were obtained in a hypoeutectic Al-Si alloy near the ultrasonic radiator where the silicon concentration was higher than the eutectic composition. The formation of hypereutectic silicon near the radiator surface indicates that high-intensity ultrasonic vibration can be used to influence the phase transformation process of metals and alloys. The size and morphology of both the silicon phase and the aluminum phase varies with increasing distance from the ultrasonic probe/radiator. Silicon morphology develops into three zones. Polyhedral primary silicon particles present in zone I, within 15 mm from the ultrasonic probe/radiator. Transition from hypereutectic silicon to eutectic silicon occurs in zone II about 15 to 20 祄 from the ultrasonic probe/radiator. The bulk of the ingot is in zone III and is hypoeutectic Al-Si alloy containing fine lamellar and fibrous eutectic silicon. The grain size is about 15 to 25 祄 in zone I, 25 to 35 祄 in zone II, and 25 to 55 祄 in zone III. The morphology of the primary ?Al phase is also changed from dendritic (in untreated samples to globular. Phase evolution during the solidification process of the alloy subjected to ultrasonic vibration is described.

Process research of non-CZ silicon material

Science.gov (United States)

Campbell, R. B.

1984-01-01

Advanced processing techniques for non-CZ silicon sheet material that might improve the cost effectiveness of photovoltaic module production were investigated. Specifically, the simultaneous diffusion of liquid boron and liquid phosphorus organometallic precursors into n-type dendritic silicon web was examined. The simultaneous junction formation method for solar cells was compared with the sequential junction formation method. The electrical resistivity of the n-n and p-n junctions was discussed. Further research activities for this program along with a program documentation schedule are given.

Numerically simulated and experimentally obtained X-ray section topographs of a spherical strain field in a floating zone silicon crystal

International Nuclear Information System (INIS)

Okitsu, Kouhei; Iida, Satoshi; Sugita, Yoshimitsu; Takeno, Hiroshi; Yagou, Yasuyoshi; Kawata, Hiroshi.

1992-01-01

An undoped floating zone (FZ) silicon crystal has been investigated by synchrotron X-radiation section topography with high-order reflections up to 14 14 0. Numerically simulated topographs based on the Takagi-Taupin equations were in good agreement with experimental distorted patterns when a spherical strain field was assumed in the crystal. The volume change of the lattice caused by the strain center was estimated to correspond to a sphere with a radius of 10 μm. (author)

Radiation Hardening of Silicon Detectors

CERN Multimedia

Leroy, C; Glaser, M

2002-01-01

%RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

Low cost silicon solar array project large area silicon sheet task: Silicon web process development

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Blais, P. D.; Davis, J. R., Jr.

1977-01-01

Growth configurations were developed which produced crystals having low residual stress levels. The properties of a 106 mm diameter round crucible were evaluated and it was found that this design had greatly enhanced temperature fluctuations arising from convection in the melt. Thermal modeling efforts were directed to developing finite element models of the 106 mm round crucible and an elongated susceptor/crucible configuration. Also, the thermal model for the heat loss modes from the dendritic web was examined for guidance in reducing the thermal stress in the web. An economic analysis was prepared to evaluate the silicon web process in relation to price goals.

Development of advanced methods for continuous Czochralski growth. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

Science.gov (United States)

Wolfson, R. G.; Sibley, C. B.

1978-01-01

The three components required to modify the furnace for batch and continuous recharging with granular silicon were designed. The feasibility of extended growth cycles up to 40 hours long was demonstrated by a recharge simulation experiment; a 6 inch diameter crystal was pulled from a 20 kg charge, remelted, and pulled again for a total of four growth cycles, 59-1/8 inch of body length, and approximately 65 kg of calculated mass.

Experimental and scale up study of the flame spread over the PMMA sheets

Directory of Open Access Journals (Sweden)

Mamourian Mojtaba

2009-01-01

Full Text Available To explore the flame spread mechanisms over the solid fuel sheets, downward flame spread over vertical polymethylmethacrylate sheets with thicknesses from 1.75 to 5.75 mm have been examined in the quiescent environment. The dependence of the flame spread rate on the thickness of sheets is obtained by one-dimensional heat transfer model. An equation for the flame spread rate based on the thermal properties and the thickness of the sheet by scale up method is derived from this model. During combustion, temperature within the gas and solid phases is measured by a fine thermocouple. The pyrolysis temperature, the length of the pyrolysis zone, the length of the preheating zone, and the flame temperature are determined from the experimental data. Mathematical analysis has yielded realistic results. This model provides a useful formula to predict the rate of flame spread over any thin solid fuel.

Supraglacial Lakes in the Percolation Zone of the Western Greenland Ice Sheet: Formation and Development using Operation IceBridge Snow Radar and ATM (2009-2014)

Science.gov (United States)

Chen, C.; Howat, I. M.; de la Peña, S.

2015-12-01

Surface meltwater lakes on the Greenland Ice Sheet have appeared at higher elevations, extending well into the percolation zone, under recent warming, with the largest expansion occurring in the western Greenland Ice Sheet. The conditions that allow lakes to form atop firn are poorly constrained, but the formation of new lakes imply changes in the permeability of the firn at high elevations, promoting meltwater runoff. We explore the formation and evolution of new surface lakes in this region above 1500 meters, using a combination of satellite imagery and repeat Snow (2-6.5 GHz) radar echograms and LIDAR measurements from NASA's Operation IceBridge of 2009-2014. We identify conditions for surface lake formation at their farthest inland extent and suggest behaviors of persistence and lake drainage are due to differences in regional ice dynamics.

Characterization of an amorphous silicon flat panel for controlling the positioning accuracy of sheet; Caracterizacion de un panel plano de silicio amorfo para control de la exactitud en el posicionamiento de laminas

Energy Technology Data Exchange (ETDEWEB)

Martinez, J.; Gonzalez, V.; Gimeno, J.; Dolores, V. de los; Pastor, V.; Crispin, V.; Guardino, C.

2011-07-01

It has established a method for measuring the position of the blades in a multi leaf collimator (MLC) used to measure dose portal imaging device (EPID) of amorphous silicon, and verified its accuracy using radiochromic films and measures water with diode Cuba, techniques perfectly well validated in our institution. This dose profiles are studied for each sheet and determine their position at the point which has 50% of the dose in the open field.

Minority carrier diffusion lengths and absorption coefficients in silicon sheet material

Science.gov (United States)

Dumas, K. A.; Swimm, R. T.

1980-01-01

Most of the methods which have been developed for the measurement of the minority carrier diffusion length of silicon wafers require that the material have either a Schottky or an ohmic contact. The surface photovoltage (SPV) technique is an exception. The SPV technique could, therefore, become a valuable diagnostic tool in connection with current efforts to develop low-cost processes for the production of solar cells. The technique depends on a knowledge of the optical absorption coefficient. The considered investigation is concerned with a reevaluation of the absorption coefficient as a function of silicon processing. A comparison of absorption coefficient values showed these values to be relatively consistent from sample to sample, and independent of the sample growth method.

LSA Large Area Silicon Sheet Task. Continuous Liquid Feed Czochralski Growth. [for solar cell fabrication

Science.gov (United States)

Fiegl, G.

1979-01-01

The design and development of equipment and processes to demonstrate continuous growth of crystals by the Czochralski method suitable for producing single silicon crystals for use in solar cells is presented. The growth of at least 150 kg of mono silicon crystal, 150 mm in diameter is continuous from one growth container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a meltdown system with a continuous solid silicon feed mechanism and a liquid transfer system, with associated automatic feedback controls is discussed. Due to the silicon monoxide build up in the furnace and its retarding effect on crystal growth the furnace conversion for operation in the low pressure range is described. Development of systems for continuous solid recharging of the meltdown chamber for various forms of poly silicon is described.

Optimization of oxidation processes to improve crystalline silicon solar cell emitters

Directory of Open Access Journals (Sweden)

L. Shen

2014-02-01

Full Text Available Control of the oxidation process is one key issue in producing high-quality emitters for crystalline silicon solar cells. In this paper, the oxidation parameters of pre-oxidation time, oxygen concentration during pre-oxidation and pre-deposition and drive-in time were optimized by using orthogonal experiments. By analyzing experimental measurements of short-circuit current, open circuit voltage, series resistance and solar cell efficiency in solar cells with different sheet resistances which were produced by using different diffusion processes, we inferred that an emitter with a sheet resistance of approximately 70 Ω/□ performed best under the existing standard solar cell process. Further investigations were conducted on emitters with sheet resistances of approximately 70 Ω/□ that were obtained from different preparation processes. The results indicate that emitters with surface phosphorus concentrations between 4.96 × 1020 cm−3 and 7.78 × 1020 cm−3 and with junction depths between 0.46 μm and 0.55 μm possessed the best quality. With no extra processing, the final preparation of the crystalline silicon solar cell efficiency can reach 18.41%, which is an increase of 0.4%abs compared to conventional emitters with 50 Ω/□ sheet resistance.

Rapid Prototyping by Single Point Incremental Forming of Sheet Metal

DEFF Research Database (Denmark)

Skjødt, Martin

2008-01-01

. The process is incremental forming since plastic deformation takes place in a small local zone underneath the forming tool, i.e. the sheet is formed as a summation of the movement of the local plastic zone. The process is slow and therefore only suited for prototypes or small batch production. On the other...... in the plastic zone. Using these it is demonstrated that the growth rate of accumulated damage in SPIF is small compared to conventional sheet forming processes. This combined with an explanation why necking is suppressed is a new theory stating that SPIF is limited by fracture and not necking. The theory...... SPIF. A multi stage strategy is presented which allows forming of a cup with vertical sides in about half of the depth. It is demonstrated that this results in strain paths which are far from straight, but strains are still limited by a straight fracture line in the principal strain space. The multi...

The Annual Glaciohydrology Cycle in the Ablation Zone of the Greenland Ice Sheet: Part 1. Hydrology Model

Science.gov (United States)

Colgan, William; Rajaram, Harihar; Anderson, Robert; Steffen. Konrad; Phillips, Thomas; Zwally, H. Jay; Abdalati, Waleed

2012-01-01

We apply a novel one-dimensional glacier hydrology model that calculates hydraulic head to the tidewater-terminating Sermeq Avannarleq flowline of the Greenland ice sheet. Within a plausible parameter space, the model achieves a quasi-steady-state annual cycle in which hydraulic head oscillates close to flotation throughout the ablation zone. Flotation is briefly achieved during the summer melt season along a approx.17 km stretch of the approx.50 km of flowline within the ablation zone. Beneath the majority of the flowline, subglacial conduit storage closes (i.e. obtains minimum radius) during the winter and opens (i.e. obtains maximum radius) during the summer. Along certain stretches of the flowline, the model predicts that subglacial conduit storage remains open throughout the year. A calculated mean glacier water residence time of approx.2.2 years implies that significant amounts of water are stored in the glacier throughout the year. We interpret this residence time as being indicative of the timescale over which the glacier hydrologic system is capable of adjusting to external surface meltwater forcings. Based on in situ ice velocity observations, we suggest that the summer speed-up event generally corresponds to conditions of increasing hydraulic head during inefficient subglacial drainage. Conversely, the slowdown during fall generally corresponds to conditions of decreasing hydraulic head during efficient subglacial drainage.

NTD Silicon; Product Characteristics, Main Uses and Growth Potential

International Nuclear Information System (INIS)

Hansen, M. G.; Bjorling, C. F.

2013-01-01

Topsil is a specialised manufacturer of ultrapure float zone silicon since 1959, headquartered in Denmark. Topsil co-pioneered the invention of Neutron Transmutation Doped (NTD) monocrystalline silicon with research institute Risoe in the 1970s and has since then been world leading manufacturer of NTD silicon for the power market. This presentation will focus on NTD silicon; its characteristics, invention and main uses. It will address the trends of the power market and market projections for NTD, and discuss the growth potential in the years ahead, including larger silicon wafers and management of the NTD supply chain

NTD Silicon; Product Characteristics, Main Uses and Growth Potential

Energy Technology Data Exchange (ETDEWEB)

Hansen, M. G.; Bjorling, C. F. [Topsil Semiconductor Materials A/S, Odense (Denmark)

2013-07-01

Topsil is a specialised manufacturer of ultrapure float zone silicon since 1959, headquartered in Denmark. Topsil co-pioneered the invention of Neutron Transmutation Doped (NTD) monocrystalline silicon with research institute Risoe in the 1970s and has since then been world leading manufacturer of NTD silicon for the power market. This presentation will focus on NTD silicon; its characteristics, invention and main uses. It will address the trends of the power market and market projections for NTD, and discuss the growth potential in the years ahead, including larger silicon wafers and management of the NTD supply chain.

Buckling of thin viscous sheets with inhomogenous viscosity under extensional flows

Science.gov (United States)

Srinivasan, Siddarth; Wei, Zhiyan; Mahadevan, L.

2016-11-01

We investigate the dynamics, shape and stability of a thin viscous sheet subjected to an extensional flow under an imposed non-uniform temperature field. Using finite element simulations, we first solve for the stretching flow to determine the pre-buckling sheet thickness and in-plane flow velocities. Next, we use this solution as the base state and solve the linearized partial differential equation governing the out-of-plane deformation of the mid-surface as a function of two dimensionless operating parameters: the normalized stretching ratio α and a dimensionless width of the heating zone β. We show the sheet can become unstable via a buckling instability driven by the development of localized compressive stresses, and determine the global shape and growth rates of the most unstable mode. The growth rate is shown to exhibit a transition from stationary to oscillatory modes in region upstream of the heating zone. Finally, we investigate the effect of surface tension and present an operating diagram that indicates regions of the parameter space that minimizes or entirely suppresses the instability while achieving desired outlet sheet thickness. Therefore, our work is directly relevant to various industrial processes including the glass redraw & float-glass method.

Reaction sintering of two-dimensional silicon carbide fiber-reinforced silicon carbide composite by sheet stacking method

International Nuclear Information System (INIS)

Yoshida, Katsumi; Mukai, Hideki; Imai, Masamitsu; Hashimoto, Kazuaki; Toda, Yoshitomo; Hyuga, Hideki; Kondo, Naoki; Kita, Hideki; Yano, Toyohiko

2007-01-01

Two-dimensionally plain woven SiC fiber-reinforced SiC composite has been developed by reaction sintering using a sheet stacking method in order to further increase mechanical and thermal properties of the composite and to obtain flexibility of manufacturing process of 2D woven SiC/SiC composites which can be applied to the fabrication of larger parts. In addition, sinterability and mechanical properties of the composite were investigated. In this study, relative density of the composites was about 90-93% and a dense composite could be obtained by reaction sintering using the sheet stacking method. The bulk density and maximum bending strength of SiC/SiC composite with a C/SiC weight ratio of 0.6 were higher than that of the composite with C/SiC ratios of 0.5 or 0.7. The values were 2.9 g/cm 3 and 200 MPa, respectively. However, the composites obtained in this study fractured in almost brittle manner due to the lower fiber volume fraction

Heterojunction Solar Cells Based on Silicon and Composite Films of Graphene Oxide and Carbon Nanotubes.

Science.gov (United States)

Yu, LePing; Tune, Daniel; Shearer, Cameron; Shapter, Joseph

2015-09-07

Graphene oxide (GO) sheets have been used as the surfactant to disperse single-walled carbon nanotubes (CNT) in water to prepare GO/CNT electrodes that are applied to silicon to form a heterojunction that can be used in solar cells. GO/CNT films with different ratios of the two components and with various thicknesses have been used as semitransparent electrodes, and the influence of both factors on the performance of the solar cell has been studied. The degradation rate of the GO/CNT-silicon devices under ambient conditions has also been explored. The influence of the film thickness on the device performance is related to the interplay of two competing factors, namely, sheet resistance and transmittance. CNTs help to improve the conductivity of the GO/CNT film, and GO is able to protect the silicon from oxidation in the atmosphere. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Characterisation of weld zone reactions in dissimilar glass-to-aluminium pulsed picosecond laser welds

Energy Technology Data Exchange (ETDEWEB)

Ciuca, Octav P., E-mail: octav.ciuca@manchester.ac.uk [School of Materials, University of Manchester, Manchester, M13 9PL (United Kingdom); Carter, Richard M. [Institute of Photonics and Quantum Sciences, Heriot-Watt University, Edinburgh, EH14 4AS (United Kingdom); Prangnell, Philip B. [School of Materials, University of Manchester, Manchester, M13 9PL (United Kingdom); Hand, Duncan P. [Institute of Photonics and Quantum Sciences, Heriot-Watt University, Edinburgh, EH14 4AS (United Kingdom)

2016-10-15

Precision welded joints, produced between fused silica glass and aluminium by a newly-developed picosecond-pulse laser technique, have been analysed for the first time using a full range of electron microscopy methods. The welds were produced as lap joints by focusing a 1.2 μm diameter laser beam through the transparent glass top sheet, slightly below the surface of the metal bottom sheet. Despite the extremely short interaction time, extensive reaction was observed in the weld zone, which involved the formation of nanocrystalline silicon and at least two transitional alumina phases, γ- and δ-Al{sub 2}O{sub 3}. The weld formation process was found to be complex and involved: the formation of a constrained plasma cavity at the joint interface, non-linear absorption in the glass, and the creation of multiple secondary keyholes in the metal substrate by beam scattering. The joint area was found to expand outside of the main interaction volume, as the energy absorbed into the low conductivity and higher melting point silica glass sheet melted the aluminium surface across a wider contact area. The reasons for the appearance of nanocrystalline Si and transitional alumina reaction products within the welds are discussed. - Highlights: •Pulsed laser welding of dissimilar materials causes extensive chemical reactivity. •Metastable Al{sub 2}O{sub 3} phases form due to laser-induced highly-transient thermal regime. •Fused silica is reduced by Al to form nanocrystalline Si. •Mechanism of joint formation is discussed.

Recovery of indium-tin-oxide/silicon heterojunction solar cells by thermal annealing

OpenAIRE

Morales Vilches, Ana Belén; Voz Sánchez, Cristóbal; Colina Brito, Mónica Alejandra; López Rodríguez, Gema; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón

2014-01-01

The emitter of silicon heterojunction solar cells consists of very thin hydrogenated amorphous silicon layers deposited at low temperature. The high sheet resistance of this type of emitter requires a transparent conductive oxide layer, which also acts as an effective antireflection coating. The deposition of this front electrode, typically by Sputtering, involves a relatively high energy ion bombardment at the surface that could degrade the emitter quality. The work function of the tra...

LSA Large Area Silicon Sheet Task Continuous Liquid Feed Czochralski Growth

Science.gov (United States)

Fiegl, G.

1979-01-01

A process for the continuous growth of crystals by the Czochralski method, suitable for producing single silicon crystals for use in solar cells was studied. Continuous growth is the growth of 100 Kg of single silicon crystals, 10 cm in diameter, from one container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a melt-down system and a liquid transfer mechanism, with associated automatic feedback controls was developed. Elements of the transfer system were further developed and tested during actual transfer runs. Considerable simplification of the heating element of the transfer tube was achieved. Accuracy and reliability of the temperature sensor, which is part of the power input control system for the transfer tube, was improved. Electrical and thermal effectiveness were increased while assembly of the transfer tube system was further simplified.

Tailoring the Electronic and Magnetic Properties of Two-Dimensional Silicon Carbide Sheets and Ribbons by Fluorination

KAUST Repository

Shi, Zhiming

2016-07-12

Fluorination has been instrumental for tuning the properties of several two-dimensional (2D) materials, including graphene, h-BN, and MoS2. However, its potential application has not yet been explored in 2D silicon carbide (SiC), a promising material for nanoelectronic devices. We investigate the structural, electronic, and magnetic properties of fully and partially fluorinated 2D SiC sheets and nanoribbons by means of density functional theory combined with cluster expansion calculations. We find that fully fluorinated 2D SiC exhibits chair configurations and a nonmagnetic semiconducting behavior. Fluorination is shown to be an efficient approach for tuning the band gap. Four ground states of partially fluorinated SiC, SiCF2x with x = 0.0625, 0.25, 0.5, 0.75, are obtained by cluster expansion calculations. All of them exhibit nanoroad patterns, with the x = 0.5 structure identified as the most stable one. The x = 0.0625 structure is a nonmagnetic metal, while the other three are all ferromagnetic half-metals, whose properties are not affected by the edge states. We propose an effective approach for modulating the electronic and magnetic behavior of 2D SiC, paving the way to applications of SiC nanostructures in integrated multifunctional and spintronic nanodevices. © 2016 American Chemical Society.

Tailoring the Electronic and Magnetic Properties of Two-Dimensional Silicon Carbide Sheets and Ribbons by Fluorination

KAUST Repository

Shi, Zhiming; Kutana, Alex; Yu, Guangtao; Chen, Wei; Yakobson, Boris I.; Schwingenschlö gl, Udo; Huang, Xuri

2016-01-01

Fluorination has been instrumental for tuning the properties of several two-dimensional (2D) materials, including graphene, h-BN, and MoS2. However, its potential application has not yet been explored in 2D silicon carbide (SiC), a promising material for nanoelectronic devices. We investigate the structural, electronic, and magnetic properties of fully and partially fluorinated 2D SiC sheets and nanoribbons by means of density functional theory combined with cluster expansion calculations. We find that fully fluorinated 2D SiC exhibits chair configurations and a nonmagnetic semiconducting behavior. Fluorination is shown to be an efficient approach for tuning the band gap. Four ground states of partially fluorinated SiC, SiCF2x with x = 0.0625, 0.25, 0.5, 0.75, are obtained by cluster expansion calculations. All of them exhibit nanoroad patterns, with the x = 0.5 structure identified as the most stable one. The x = 0.0625 structure is a nonmagnetic metal, while the other three are all ferromagnetic half-metals, whose properties are not affected by the edge states. We propose an effective approach for modulating the electronic and magnetic behavior of 2D SiC, paving the way to applications of SiC nanostructures in integrated multifunctional and spintronic nanodevices. © 2016 American Chemical Society.

CO2 Laser Cutting of Hot Stamping Boron Steel Sheets

OpenAIRE

Pasquale Russo Spena

2017-01-01

This study investigates the quality of CO2 laser cutting of hot stamping boron steel sheets that are employed in the fabrication of automotive body-in-white. For this purpose, experimental laser cutting tests were conducted on 1.2 mm sheets at varying levels of laser power, cutting speed, and oxygen pressure. The resulting quality of cut edges was evaluated in terms of perpendicularity tolerance, surface irregularity, kerf width, heat affected zone, and dross extension. Experimental tests wer...

Recent developments in low cost silicon solar cells for terrestrial applications. [sheet production methods

Science.gov (United States)

Leipold, M. H.

1978-01-01

A variety of techniques may be used for photovoltaic energy systems. Concentrated or not concentrated sunlight may be employed, and a number of materials can be used, including silicon, gallium arsenide, cadmium sulfide, and cadmium telluride. Most of the experience, however, has been obtained with silicon cells employed without sunlight concentration. An industrial base exists at present for producing solar cells at a price in the range from $15 to $30 per peak watt. A major federal program has the objective to reduce the price of power provided by silicon solar systems to approximately $1 per peak watt in the early 1980's and $0.50 per watt by 1986. The approaches considered for achieving this objective are discussed.

Sheet flow measurements on a surf-zone sandbar under shoaling and breaking waves

Science.gov (United States)

Mieras, R.; Puleo, J. A.; Cox, D. T.; Anderson, D. L.; Kim, Y.; Hsu, T. J.

2016-02-01

A large-scale experiment to quantify sheet flow processes over a sandbar under varying levels of wave steepness was conducted in the wave flume at Oregon State University's O.H. Hinsdale Wave Research Laboratory. A fixed profile was constructed with concrete slabs anchored to the flume side walls, with the exception of the sandbar crest, where a steel pit was installed and filled with well-sorted sediment (d50 0.17 mm). This hybrid approach allowed for the isolation of small-scale bed response to large-scale wave forcing over the sandbar, where an array of sensors was positioned to measure hydrodynamic forcing and sediment response. Near-bed ( 0.08 m3/m3) were approximated using Conductivity Concentration Profilers. Test conditions consisted of a regular wave train with incident wave heights for individual runs ranging from 0.4 m to 0.6 m and incident wave periods from 5 s to 9 s, encompassing a variety of skewed and asymmetric wave shapes across the shoaling and breaking regimes. Ensemble-averaged sediment concentration profiles exhibit considerable variation across the different conditions. The largest variation in sheet layer thickness occurs beneath the wave crest, ranging from 30 grain diameters for 5 sec, 0.4 m waves, up to 80 grain diameters for 7 sec, 0.6 m waves. Furthermore, the initiation and duration of sheet flow relative to the wave period differs for each condition set. It is likely that more than one mechanism plays a role in determining the aforementioned sheet layer characteristics. In the present work, we focus on the relative magnitude and phase of the near-bed flow acceleration and shear stress in determining the characteristics of the sheet layer.

Thin film silicon photovoltaics: Architectural perspectives and technological issues

Energy Technology Data Exchange (ETDEWEB)

Mercaldo, Lucia Vittoria; Addonizio, Maria Luisa; Noce, Marco Della; Veneri, Paola Delli; Scognamiglio, Alessandra; Privato, Carlo [ENEA, Portici Research Center, Piazzale E. Fermi, 80055 Portici (Napoli) (Italy)

2009-10-15

Thin film photovoltaics is a particularly attractive technology for building integration. In this paper, we present our analysis on architectural issues and technological developments of thin film silicon photovoltaics. In particular, we focus on our activities related to transparent and conductive oxide (TCO) and thin film amorphous and microcrystalline silicon solar cells. The research on TCO films is mainly dedicated to large-area deposition of zinc oxide (ZnO) by low pressure-metallorganic chemical vapor deposition. ZnO material, with a low sheet resistance (<8 {omega}/sq) and with an excellent transmittance (>82%) in the whole wavelength range of photovoltaic interest, has been obtained. ''Micromorph'' tandem devices, consisting of an amorphous silicon top cell and a microcrystalline silicon bottom cell, are fabricated by using the very high frequency plasma enhanced chemical vapor deposition technique. An initial efficiency of 11.1% (>10% stabilized) has been obtained. (author)

A flexible tactile sensitive sheet using a hetero-core fiber optic sensor

Science.gov (United States)

Fujino, S.; Yamazaki, H.; Hosoki, A.; Watanabe, K.

2014-05-01

In this report, we have designed a tactile sensitive sheet based on a hetero-core fiber-optic sensor, which realize an areal sensing by using single sensor potion in one optical fiber line. Recently, flexible and wide-area tactile sensing technology is expected to applied to acquired biological information in living space and robot achieve long-term care services such as welfare and nursing-care and humanoid technology. A hetero-core fiber-optic sensor has several advantages such as thin and flexible transmission line, immunity to EMI. Additionally this sensor is sensitive to moderate bending actions with optical loss changes and is independent of temperature fluctuation. Thus, the hetero-core fiber-optic sensor can be suitable for areal tactile sensing. We measure pressure characteristic of the proposed sensitive sheet by changing the pressure position and pinching characteristic on the surface. The proposed tactile sensitive sheet shows monotonic responses on the whole sensitive sheet surface although different sensitivity by the position is observed at the sensitive sheet surface. Moreover, the tactile sensitive sheet could sufficiently detect the pinching motion. In addition, in order to realize the discrimination between pressure and pinch, we fabricated a doubled-over sensor using a set of tactile sensitive sheets, which has different kinds of silicon robbers as a sensitive sheet surface. In conclusion, the flexible material could be given to the tactile sensation which is attached under proposed sensitive sheet.

Record high efficiency of screen-printed silicon aluminum back surface field solar cell: 20.29%

Science.gov (United States)

Kim, Ki Hyung; Park, Chang Sub; Doo Lee, Jae; Youb Lim, Jong; Yeon, Je Min; Kim, Il Hwan; Lee, Eun Joo; Cho, Young Hyun

2017-08-01

We have achieved a record high cell efficiency of 20.29% for an industrial 6-in. p-type monocrystalline silicon solar cell with a full-area aluminum back surface field (Al-BSF) by simply modifying the cell structure and optimizing the process with the existing cell production line. The cell efficiency was independently confirmed by the Solar Energy Research Institute of Singapore (SERIS). To increase the cell efficiency, for example, in four busbars, double printing, a lightly doped emitter with a sheet resistance of 90 to 100 Ω/□, and front surface passivation by using silicon oxynitride (SiON) on top of a silicon nitride (SiN x ) antireflection layer were adopted. To optimize front side processing, PC1D simulation was carried out prior to cell fabrication. The resulting efficiency gain is 0.64% compared with that in the reference cells with three busbars, a single antireflection coating layer, and a low-sheet-resistance emitter.

Innovative technologies for emitter formation of crystalline silicon solar cells using in-line diffusion; Innovative Technologien zur Emittererzeugung fuer kristalline Silizium-Solarzellen mittels Durchlaufdiffusion

Energy Technology Data Exchange (ETDEWEB)

Voyer, Catherine

2009-04-20

An in-line emitter formation process for crystalline silicon solar cells was developed. The wafers were coated at room temperature with dilute phosphoric acid (2.5 w/w% in water) using ultrasonic spraying and then heated up to temperatures around 900 C in a metal-contamination-free in-line furnace. In the first zones of the furnace, a phosphosilicate glass (PSG) is formed on the silicon surface and serves as the doping source. The PSG thickness was adjusted by varying the flow rate of dilute phosphoric acid to the spray nozzle and took on values appropriate for emitter formation, in the range of {proportional_to}40-120 nm. A surfactant mixture was added to the dilute phosphoric acid in order to obtain complete wetting of the silicon surface. The mixture, which was composed of a hydrocarbon surfactant and of a fluorosurfactant, achieved better wetting properties than would be possible when using only one of the two surfactants. The spray solution containing only the hydrocarbon surfactant achieved a faster drop flattening, while the spray solution containing only the fluorosurfactant achieved a lower static surface tension. The mixture allowed for a combination of these desired properties: The drops coalesced together sufficiently rapidly (before drying) on the silicon surface to form a complete dopant source liquid layer and this layer remains sufficiently homogeneous during the layer drying. The sprayed-on layer is thicker ({proportional_to}15 microns) than the height of the surface texture ({proportional_to}5-10 microns). The liquid strives for a state of equilibrium, a convex meniscus. The topography of the liquid surface at the time at which the increase in viscosity puts an end to the liquid flow is reflected in the topography of the PSG thickness. The corresponding variations in sheet resistance across a wafer are sufficiently small for solar cells. Furthermore, the liquid layer conforms itself, during the drying, to the surface texture on a microscopic scale

Analysis of the RPE sheet in the rd10 retinal degeneration model

Energy Technology Data Exchange (ETDEWEB)

Jiang, Yi [Los Alamos National Laboratory

2011-01-04

The normal RPE sheet in the C57Bl/6J mouse is subclassified into two major tiling patterns: A regular generally hexagonal array covering most of the surface and a 'soft network' near the ciliary body made of irregularly shaped cells. Physics models predict these two patterns based on contractility and elasticity of the RPE cell, and strength of cellular adhesion between cells. We hypothesized and identified major changes in RPE regular hexagonal tiling pattern in rdl0 compared to C57BL/6J mice. RPE sheet damage was extensive but occurred in rd10 later than expected, after most retinal degeneration. RPE sheet changes occur in zones with a bullseye pattern. In the posterior zone around the optic nerve RPE cells take on larger irregular and varied shapes to form an intact monolayer. In mid periphery, there is a higher than normal density of cells that progress into involuted layers of RPE under the retina. The periphery remains mostly normal until late stages of degeneration. The number of neighboring cells varies widely depending on zone and progression. RPE morphology continues to deteriorate long after the photoreceptors have degenerated. The RPE cells are bystanders to the rd10 degeneration within photo receptors, and the collateral damage to the RPE sheet resembles stimulation of migration or chemotaxis. Quantitative measures of the tiling patterns and histopathology detected here, scripted in a pipeline written in Perl and Cell Profiler (an open source Matlab plugin), are directly applicable to RPE sheet images from noninvasive fundus autofluorescence (FAF), adaptive optics confocal scanning laser ophthalmoscope (AO-cSLO), and spectral domain optical coherence tomography (SD-OCT) of patients with early stage AMD or RP.

Capacity spectroscopy of minority-carrier radiation traps in n-type silicon

International Nuclear Information System (INIS)

Kuchinskij, P.V.; Lomako, V.M.; Shakhlevich, L.N.

1987-01-01

Minority charge-carrier radiation traps in n-silicon, produced by neutron transmutation doping (NTD) and zone melting method, were studied using unsteady capacity spectroscopy method. Studying the parameters of defects, formed in the lower half of the restricted zone, was performed using minority carrier injection by forward current pulses. Samples were p + -n-structures, produced on the basis of silicon with different oxygen content. It is shown, that a trap with activation energy ≅E v +0.34 eV appears to be the main defect in oxygen p-silicon. Investigation into thermal stability has shown, that centers with E v +0.34 eV and E v +0.27 eV activation energies are annealed within the same temperature interval (300-400 deg C)

Large-Signal Injection-Level Spectroscopy of Impurities in Silicon

International Nuclear Information System (INIS)

Ahrenkiel, R.K.; Johnston, S.W.

1998-01-01

Deep level defects in silicon are identified by measuring the recombination lifetime as a function of the injection level. The basic models for recombination at deep and shallow centers is developed. The defect used for the theoretical model is the well-known interstitial Fe ion in silicon. Data are presented on silicon samples ranging in defect content from intentionally Fe-doped samples to an ultra-pure float-zone grown sample. These data are analyzed in terms of the injection-level spectroscopy model

Copper contamination in thin stainless steel sheet

International Nuclear Information System (INIS)

Holbert, R.K. Jr.; Dobbins, A.G.; Bennett, R.K. Jr.

1986-01-01

The standard welding technique used at Oak Ridge Y-12 Plant for joining thin stainless sheet is the gas tungsten arc (GTA) welding process. One of the reoccurring problems with the sheet welds is surface cracking in the heat-affected zone (HAZ). Metallography shows that the cracks are only about 0.05 mm (0.002 in.) deep which is significant in a 0.25 mm (0.01 in.) thick sheet. Thus, welding requirements do not permit any surfacing cracking as detected by a fluorescent dye penetrant test conducted on every part after welding. Surface cracks have been found in both of the two most common weld designs in the thin sheet fabricated at the Oak Ridge Y-12 Plant. These butt joints are welded between two 0.25 mm thick stainless steel sheets and a tube with eyelet welded to a 25 mm (0.98 in.) thick sheet. The weld between the two sheets is made on a semiautomatic seam welding unit, whereas the tube-to-eyelet-to-sheet welds are done manually. The quality of both welds is very dependent on the welding procedure and the way the parts are placed in the weld fixturing. Metallographic examination has indicated that some welded parts with surface cracking in the weld region had copper particles on the surface, and the question of copper contamination has been raised. With the aid of a scanning electron microscope and an electron microprobe, the existence of copper in an around the surface cracks has been verified. The copper is on the surface of the parts prior to welding in the form of small dust particles

The Potsdam Parallel Ice Sheet Model (PISM-PIK) - Part 2: Dynamic equilibrium simulation of the Antarctic ice sheet

Science.gov (United States)

Martin, M. A.; Winkelmann, R.; Haseloff, M.; Albrecht, T.; Bueler, E.; Khroulev, C.; Levermann, A.

2011-09-01

We present a dynamic equilibrium simulation of the ice sheet-shelf system on Antarctica with the Potsdam Parallel Ice Sheet Model (PISM-PIK). The simulation is initialized with present-day conditions for bed topography and ice thickness and then run to steady state with constant present-day surface mass balance. Surface temperature and sub-shelf basal melt distribution are parameterized. Grounding lines and calving fronts are free to evolve, and their modeled equilibrium state is compared to observational data. A physically-motivated calving law based on horizontal spreading rates allows for realistic calving fronts for various types of shelves. Steady-state dynamics including surface velocity and ice flux are analyzed for whole Antarctica and the Ronne-Filchner and Ross ice shelf areas in particular. The results show that the different flow regimes in sheet and shelves, and the transition zone between them, are captured reasonably well, supporting the approach of superposition of SIA and SSA for the representation of fast motion of grounded ice. This approach also leads to a natural emergence of sliding-dominated flow in stream-like features in this new 3-D marine ice sheet model.

External self-gettering of nickel in float zone silicon wafers

Science.gov (United States)

Gay, N.; Martinuzzi, S.

1997-05-01

During indiffusion of Ni atoms in silicon crystals at 950 °C from a nickel layer source, Ni-Si alloys can be formed close to the surface. Metal solubility in these alloys is higher than in silicon, which induces a marked segregation gettering of the Ni atoms which have diffused in the bulk of the wafers. Consequently, the regions of the wafers covered with the Ni layer are less contaminated than adjacent regions in which Ni atoms have also penetrated, as shown by the absence of precipitates and the higher diffusion length of minority carriers. The results suggest the existence of external self-gettering of Ni atoms by the nickel source.

Associations of geomagnetic activity with plasma sheet thinning and expansion: A statistical study

International Nuclear Information System (INIS)

Hones, E.W. Jr.; Pytte, T.; West, H.I. Jr.

1984-01-01

Associations of geomagnetic activity in the auroral zone with thinnings and expansions of the magnetotail plasma sheet are examined statistically in this paper. We first identified many plasma sheet thinnings and expansions in plasma and particle data from VELA satellites and from OGO 5 without reference to the ground magnetic data. These events were grouped according to the location of the detecting satellite in the magnetotail. For each such group the times of thinning or expansion were then used as fiducial times in a superposed-epoch analysis of the geomagnetic AL index values that were recorded in 8-hour intervals centered on the event times. The results show that many plasma sheet thinnings and expansions are related to discrete negative bay structures that are the classical signature of substorms. Furthermore, they support earlier findings that plasma sheet thinning and expansion at the VELA orbit (rroughly-equal18 R/sub E/) tend to be associated with the onset of the auroral zone negative bay and the beginning of its subsidence, respectively. Earthward of rroughly-equal13-15 R/sub E/, plasma sheet expansion occurs near the time of the onset of the negative bay, again in agreement with earlier findings. A large fraction of plasma sheet expansions to half thicknesses of > or approx. =6 R/sub E/ at the VELA orbit are associated not with a baylike geomagnetic disturbance but with subsidence of a prolonged interval of disturbance. The study also shows that many plasma sheet expansions are related simply to generally enhanced geomagnetic activity showing no baylike or other distinctive features

On use of weld zone temperatures for online monitoring of weld quality in friction stir welding of naturally aged aluminium alloys

International Nuclear Information System (INIS)

Imam, Murshid; Biswas, Kajal; Racherla, Vikranth

2013-01-01

Highlights: • FSWs for 6063-T4 AA are done at different process parameters and sheet thicknesses. • Weld nugget zone and heat affected zone temperatures are monitored for each case. • Microstructural and mechanical characterisation of welds is done in all cases. • Weld ductility is found to be particularly sensitive to weld zone temperatures. • Strong correlation is found between WNZ and HAZ temperatures and weld properties. - Abstract: 6063-T4 aluminium alloy sheets of 3 and 6 mm thicknesses were friction stir butt welded using a square tool pin at a wide range of tool rotational speeds. Properties of obtained welds were characterised using tensile tests, optical micrographs, X-ray diffraction, and transmission electron microscopy. Shape, size, and distribution of precipitates in weld zones, and strength and ductility of welds were seen to directly correlate with peak temperatures in weld nugget and heat affected zones, independent of sheet thickness. In addition, fluctuations in measured temperature profiles, for 3 mm sheets, were seen to correlate with an increase in scatter of weld nugget zone properties for 3 mm sheets. Optimal weld strength and ductility were obtained for peak weld nugget zone temperatures of around 450 °C and corresponding peak heat affected zone temperatures of around 360–380 °C. Results obtained suggest that, at least for naturally aged aluminium alloys, nature of temperature evolution and magnitudes of peak temperatures in weld nugget and heat affected zones provide information on uniformity of properties in weld zones, overaging of heat affected zones, and formation of tunnel defects from improper material mixing at low weld zone temperatures

A nonsteady-state firn-densification model for the percolation zone of a glacier

DEFF Research Database (Denmark)

Reeh, Niels

2008-01-01

A simple steady state firn-densification model is modified to account for short-term time variations of accumulation rate and surface temperature. The temporal surface-elevation- and mass changes at two sites in the percolation zone of an ice sheet in response to various climate histories...... are determined. It is shown that a straight-forward translation of observed short-term ice-sheet surface-elevation variations into mass changes may be completely misleading, particularly for the percolation zone of the ice sheet, where temperature driven variations of melting/re-freezing rates have a strong...... impact on near surface density. In the lower percolation zone, the mass change associated with a temperature anomaly in respect to the mean climate may for example amount to as little as 10 percent of the observed, simultaneous surface elevation change. Moreover, significant surface elevation change may...

A comparison between rad-hard float zone silicon diodes as gamma dosimeter in radiation processing

Energy Technology Data Exchange (ETDEWEB)

Camargo, Fábio de [Amazônia Azul Tecnologias de Defesa S.A. (AMAZUL), São Paulo, SP (Brazil); Gonçalves, Josemary A.C.; Bueno, Carmen C., E-mail: dcamargo@gmail.com, E-mail: ccbueno@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN-CNEN/SP), Sao Paulo, SP (Brazil)

2017-07-01

In this work, we report on the results obtained with rad-hard Standard Float Zone (STFZ) and Diffused Oxygenated Float Zone (DOFZ) silicon diodes in radiation processing dosimetry. The dosimetric probes were designed to operate in the direct current mode, as on-line radiation dosimeter. The irradiation of the samples was performed using a {sup 60}Co source with a dose rate of almost 2.4 kGy/h. The current response of each diode was measured as a function of the exposure time in steps from 5 kGy up to 50 kGy to achieve a total absorbed dose of 275 kGy. In this dose range it is observed a significant decrease in the photocurrent generated in both devices due to gamma radiation defects produced in their active volumes. To mitigate this effect, the samples were pre-irradiated with {sup 60}Co gamma rays at 700 kGy. Despite of being less sensitive, these devices presented stable and reproducible current signals with a relative sensitivity decrease of about 19% within the whole range of dose studied. The dose-response curves of the pre-irradiated diodes showed quadratic behavior with correlation coefficient higher than 0.9999 for total absorbed dose up to 275 kGy. The comparison of the FZ and DOFZ responses evidenced that the latter was slightly superior to the first. However, it is important to note that all pre-irradiated diodes can be used as gamma dosimeters in radiation processing applications. (author)

A comparison between rad-hard float zone silicon diodes as gamma dosimeter in radiation processing

International Nuclear Information System (INIS)

Camargo, Fábio de; Gonçalves, Josemary A.C.; Bueno, Carmen C.

2017-01-01

In this work, we report on the results obtained with rad-hard Standard Float Zone (STFZ) and Diffused Oxygenated Float Zone (DOFZ) silicon diodes in radiation processing dosimetry. The dosimetric probes were designed to operate in the direct current mode, as on-line radiation dosimeter. The irradiation of the samples was performed using a 60 Co source with a dose rate of almost 2.4 kGy/h. The current response of each diode was measured as a function of the exposure time in steps from 5 kGy up to 50 kGy to achieve a total absorbed dose of 275 kGy. In this dose range it is observed a significant decrease in the photocurrent generated in both devices due to gamma radiation defects produced in their active volumes. To mitigate this effect, the samples were pre-irradiated with 60 Co gamma rays at 700 kGy. Despite of being less sensitive, these devices presented stable and reproducible current signals with a relative sensitivity decrease of about 19% within the whole range of dose studied. The dose-response curves of the pre-irradiated diodes showed quadratic behavior with correlation coefficient higher than 0.9999 for total absorbed dose up to 275 kGy. The comparison of the FZ and DOFZ responses evidenced that the latter was slightly superior to the first. However, it is important to note that all pre-irradiated diodes can be used as gamma dosimeters in radiation processing applications. (author)

Purification by using the zone melting technique; Purification par la technique de la zone fondue

Energy Technology Data Exchange (ETDEWEB)

Clerc, Michel

1962-06-22

The zone melting technique has first been used in metallurgy, and has been developed for the preparation of silicon and germanium for semiconductors, and then for the preparation of organic bodies of high purity. In this research thesis, the author first presents the principle of this technique, and then discusses the influence of agitation in liquid phase, and the influence of the number of passages over the zone. He discusses issues related to matter transport, and some technical details which intervene in the design of an apparatus for purification by zone melting. He finally presents examples.

Evaluation of prototype silicon drift detectors

International Nuclear Information System (INIS)

Ellison, J.; Hall, G.; Roe, S.; Lucas, A.

1988-01-01

Operating characteristics of several prototypes of silicon drift detectors are investigated. Detectors are made of unpolished silicon produced by the zone melting method and characterized by n-type conductivity and specific resistance of 3.6-4.6 kOhmxcm. The detectors comprise 40 parallel bands of 200 μm width and 1 cm length separated by 50 μm intervals. Data characterizing the potential distribution near anodes under the operating bias voltage, dependences of capacities and leakage as well as the detector space resolution

Laser process for extended silicon thin film solar cells

International Nuclear Information System (INIS)

Hessmann, M.T.; Kunz, T.; Burkert, I.; Gawehns, N.; Schaefer, L.; Frick, T.; Schmidt, M.; Meidel, B.; Auer, R.; Brabec, C.J.

2011-01-01

We present a large area thin film base substrate for the epitaxy of crystalline silicon. The concept of epitaxial growth of silicon on large area thin film substrates overcomes the area restrictions of an ingot based monocrystalline silicon process. Further it opens the possibility for a roll to roll process for crystalline silicon production. This concept suggests a technical pathway to overcome the limitations of silicon ingot production in terms of costs, throughput and completely prevents any sawing losses. The core idea behind these thin film substrates is a laser welding process of individual, thin silicon wafers. In this manuscript we investigate the properties of laser welded monocrystalline silicon foils (100) by micro-Raman mapping and spectroscopy. It is shown that the laser beam changes the crystalline structure of float zone grown silicon along the welding seam. This is illustrated by Raman mapping which visualizes compressive stress as well as tensile stress in a range of - 147.5 to 32.5 MPa along the welding area.

Continuous Estimates of Surface Density and Annual Snow Accumulation with Multi-Channel Snow/Firn Penetrating Radar in the Percolation Zone, Western Greenland Ice Sheet

Science.gov (United States)

Meehan, T.; Marshall, H. P.; Bradford, J.; Hawley, R. L.; Osterberg, E. C.; McCarthy, F.; Lewis, G.; Graeter, K.

2017-12-01

A priority of ice sheet surface mass balance (SMB) prediction is ascertaining the surface density and annual snow accumulation. These forcing data can be supplied into firn compaction models and used to tune Regional Climate Models (RCM). RCMs do not accurately capture subtle changes in the snow accumulation gradient. Additionally, leading RCMs disagree among each other and with accumulation studies in regions of the Greenland Ice Sheet (GrIS) over large distances and temporal scales. RCMs tend to yield inconsistencies over GrIS because of sparse and outdated validation data in the reanalysis pool. Greenland Traverse for Accumulation and Climate Studies (GreenTrACS) implemented multi-channel 500 MHz Radar in multi-offset configuration throughout two traverse campaigns totaling greater than 3500 km along the western percolation zone of GrIS. The multi-channel radar has the capability of continuously estimating snow depth, average density, and annual snow accumulation, expressed at 95% confidence (+-) 0.15 m, (+-) 17 kgm-3, (+-) 0.04 m w.e. respectively, by examination of the primary reflection return from the previous year's summer surface.

The Potsdam Parallel Ice Sheet Model (PISM-PIK – Part 2: Dynamic equilibrium simulation of the Antarctic ice sheet

Directory of Open Access Journals (Sweden)

M. A. Martin

2011-09-01

Full Text Available We present a dynamic equilibrium simulation of the ice sheet-shelf system on Antarctica with the Potsdam Parallel Ice Sheet Model (PISM-PIK. The simulation is initialized with present-day conditions for bed topography and ice thickness and then run to steady state with constant present-day surface mass balance. Surface temperature and sub-shelf basal melt distribution are parameterized. Grounding lines and calving fronts are free to evolve, and their modeled equilibrium state is compared to observational data. A physically-motivated calving law based on horizontal spreading rates allows for realistic calving fronts for various types of shelves. Steady-state dynamics including surface velocity and ice flux are analyzed for whole Antarctica and the Ronne-Filchner and Ross ice shelf areas in particular. The results show that the different flow regimes in sheet and shelves, and the transition zone between them, are captured reasonably well, supporting the approach of superposition of SIA and SSA for the representation of fast motion of grounded ice. This approach also leads to a natural emergence of sliding-dominated flow in stream-like features in this new 3-D marine ice sheet model.

Effects of the Formulations of Silicon-Based Composite Anodes on their Mechanical, Storage, and Electrochemical Properties.

Science.gov (United States)

Assresahegn, Birhanu Desalegn; Bélanger, Daniel

2017-10-23

In this work, the effects of the formulation of silicon-based composite anodes on their mechanical, storage, and electrochemical properties were investigated. The electrode formulation was changed through the use of hydrogenated or modified (through the covalent attachment of a binding additive such as polyacrylic acid) silicon and acetylene black or graphene sheets as conducting additives. A composite anode with a covalently grafted binder had the highest elongation without breakages and strong adhesion to the current collector. These mechanical properties depend significantly on the conductive carbon additive used and the use of graphene sheets instead of acetylene black can improve elongation and adhesion significantly. After 180 days of storage under ambient conditions, the electronic conductivity and discharge capacity of the modified silicon electrode showed much smaller decreases in these properties than those of the hydrogenated silicon composite electrode, indicating that the modification can result in passivation and a constant composition of the active material. Moreover, the composite Si anode has a high packing density. Consequently, thin-film electrodes with very high material loadings can be prepared without decreased electrochemical performance. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Radiation hardness of silicon detectors for collider experiments

International Nuclear Information System (INIS)

Golutvin, I.; Cheremukhin, A.; Fefelova, E.

1995-01-01

The silicon planar detectors before and after fast neutron irradiation ( n o> = 1.35 MeV) at room temperature have been investigated. Maximal neutron fluence has been 8 · 10 13 cm -2 . The detectors have been manufactured of the high resistivity (1 : 10 k Ohm · cm) n-type float-zone silicon (FZ-Si) with the orientation supplied by two different producers: WACKER CHEMITRONIC and Zaporojie Titanium-Magnesium Factory (ZTMF). The influence of fast neutron irradiation of the main parameters of the starting silicon before the technological high temperature treatment has been investigated as well. 30 refs., 17 figs., 5 tabs

Optical absorption in silicon layers in the presence of charge inversion/accumulation or ion implantation

International Nuclear Information System (INIS)

Alloatti, L.; Lauermann, M.; Koos, C.; Freude, W.; Sürgers, C.; Leuthold, J.

2013-01-01

We determine the optical losses in gate-induced charge accumulation/inversion layers at a Si/SiO 2 interface. Comparison between gate-induced charge layers and ion-implanted thin silicon films having an identical sheet resistance shows that optical losses can be significantly lower for gate-induced layers. For a given sheet resistance, holes produce higher optical loss than electrons. Measurements have been performed at λ = 1550 nm

Performance of irradiated silicon microstrip detectors

International Nuclear Information System (INIS)

Catacchini, E.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Lenzi, M.; Meschini, M.; Parrini, G.; Pieri, M.

1999-01-01

Silicon microstrip devices to be installed in Large Hadron Collider (LHC) tracking detectors will have to operate in a high radiation environment. We report on performance studies of silicon microstrip detectors irradiated with neutrons or protons, up to fluences comparable to the first ten years of running at LHC. Obtained results show that irradiated detectors can still be operated with satisfactory signal-to-noise ratio,and in the case of inhomogeneously type inverted detector a very good position resolution is achieved regardless of the zone crossed by the particle

Towards neuromorphic electronics: Memristors on foldable silicon fabric

KAUST Repository

Ghoneim, Mohamed T.

2014-11-01

The advantages associated with neuromorphic computation are rich areas of complex research. We address the fabrication challenge of building neuromorphic devices on structurally foldable platform with high integration density. We present a CMOS compatible fabrication process to demonstrate for the first time memristive devices fabricated on bulk monocrystalline silicon (100) which is next transformed into a flexible thin sheet of silicon fabric with all the pre-fabricated devices. This process preserves the ultra-high integration density advantage unachievable on other flexible substrates. In addition, the memristive devices are of the size of a motor neuron and the flexible/folded architectural form factor is critical to match brain cortex\\'s folded pattern for ultra-compact design.

Flexural Strength Of Prestressed Concrete Beams With Openings And Strengthened With CFRP Sheets

Directory of Open Access Journals (Sweden)

Dr. Mustafa B. Dawood

2015-06-01

Full Text Available Abstract This paper presents an experimental investigation of flexural strength of pretensioned prestressed concrete beams with openings and strengthened with CFRP sheets tested as simply supported span subjected under two-point loading. The experimental work includes testing of nine prestressed concrete beams specimens with dimensions effective length 1800mm depth 300mm width 130mm two of which were without openings as a control beams one without and the other with strengthening by CFRP three were with openings and the remaining four with openings and strengthened with CFRP sheets. The opening was made at square shape 100100 mm in flexure zone at mid span of beam. Several design parameters were varied such as opening width opening depth and strengthening of openings of beams by CFRP sheets at compression and tension zone. Experimental results showed that the presence of square opening with ratio hH 0.333 and rectangular opening with ratio hH from 0.333-0.5 at mid span of beams decreased the ultimate load about 5.5 and 5.5-33.1 respectively when compared with beam without openings control beam. The externally strengthened prestressed concrete beams with bonded CFRP sheets showed a significant increase at the ultimate load this increase was about 10.9-28.8 for flexure beams when compared with the unstrengthened beams. Moreover the load-deflection curves for flexure beams strengthened with CFRP sheets were stiffer than the unstrengthened beams. Therefore this results gave a good indication about using CFRP sheets in improvement of deflection.

Silicon solar cells made by ion implantation and glow discharge

International Nuclear Information System (INIS)

Ponpon, J.P.; Siffert, P.

1975-01-01

Three different methods of silicon solar cell preparation are considered and investigated: low energy implantation, glow discharge and prebombarded Schottky barriers. The properties of the contact layers realized by these processes are compared in terms of junction depth and sheet resistance. Preliminary results show the usefulness of these techniques for terrestrial solar cell realization [fr

Radiation damage in silicon detectors

CERN Document Server

Lindström, G

2003-01-01

Radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects. Both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered. Basic results are taken from the work done in the CERN-RD48 (ROSE) collaboration updated by results of recent work. Preliminary studies on the use of dimerized float zone and Czochralski silicon as detector material show possible benefits. An essential progress in the understanding of the radiation-induced detector deterioration had recently been achieved in gamma irradiation, directly correlating defect analysis data with the macroscopic detector performance.

Deformation mechanisms of silicon during nanoscratching

Energy Technology Data Exchange (ETDEWEB)

Gassilloud, R.; Gasser, P.; Buerki, G.; Michler, J. [EMPA, Materials Science and Technology, Feuerwerkerstrasse 39, 3602 Thun (Switzerland); Ballif, C. [University of Neuchatel, A.-L. Breguet 2, 2000 Neuchatel (Switzerland)

2005-12-01

The deformation mechanisms of silicon {l_brace}001{r_brace} surfaces during nanoscratching were found to depend strongly on the loading conditions. Nanoscratches with increasing load were performed at 2 {mu}m/s (low velocity) and 100 {mu}m/s (high velocity). The load-penetration-distance curves acquired during the scratching process at low velocity suggests that two deformation regimes can be defined, an elasto-plastic regime at low loads and a fully plastic regime at high loads. High resolution scanning electron microscopy of the damaged location shows that the residual scratch morphologies are strongly influenced by the scratch velocity and the applied load. Micro-Raman spectroscopy shows that after pressure release, the deformed volume inside the nanoscratch is mainly composed of amorphous silicon and Si-XII at low scratch speeds and of amorphous silicon at high speeds. Transmission electron microscopy shows that Si nanocrystals are embedded in an amorphous matrix at low speeds, whereas at high speeds the transformed zone is completely amorphous. Furthermore, the extend of the transformed zone is almost independent of the scratching speed and is delimited by a dislocation rich area that extends about as deep as the contact radius into the surface. To explain the observed phase and defect distribution a contact mechanics based decompression model that takes into account the load, the velocity, the materials properties and the contact radius in scratching is proposed. It shows that the decompression rate is higher at low penetration depth, which is consistent with the observation of amorphous silicon in this case. The stress field under the tip is computed using an elastic contact mechanics model based on Hertz's theory. The model explains the observed shape of the transformed zone and suggests that during load increase, phase transformation takes place prior to dislocation nucleation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Amorphization of silicon by femtosecond laser pulses

International Nuclear Information System (INIS)

Jia, Jimmy; Li Ming; Thompson, Carl V.

2004-01-01

We have used femtosecond laser pulses to drill submicron holes in single crystal silicon films in silicon-on-insulator structures. Cross-sectional transmission electron microscopy and energy dispersive x-ray analysis of material adjacent to the ablated holes indicates the formation of a layer of amorphous Si. This demonstrates that even when material is ablated using femtosecond pulses near the single pulse ablation threshold, sufficient heating of the surrounding material occurs to create a molten zone which solidifies so rapidly that crystallization is bypassed

A parylene-filled-trench technique for thermal isolation in silicon-based microdevices

International Nuclear Information System (INIS)

Lei Yinhua; Wang Wei; Li Ting; Jin Yufeng; Zhang Haixia; Li Zhihong; Yu Huaiqiang; Luo Yingcun

2009-01-01

Microdevices prepared in a silicon substrate have been widely used in versatile fields due to the matured silicon-based microfabrication technique and the excellent physical properties of silicon material. However, the high thermal conductivity of silicon restricts its application in most thermal microdevices, especially devices comprising different temperature zones. In this work, a parylene-filled-trench technique was optimized to realize high-quality thermal isolation in silicon-based microdevices. Parylene C, a heat transfer barricading material, was deposited on parallel high-aspect-ratio trenches, which surrounded the isolated target zones. After removing the remnant silicon beneath the trenches by deep reactive ion etching from the back side, a high-quality heat transfer barrier was obtained. By using narrow trenches, only 5 µm thick parylene was required for a complete filling, which facilitated multi-layer interconnection thereafter. The parylene filling performance inside the high-aspect-ratio trench was optimized by two approaches: multiple etch–deposition cycling and trench profile controlling. A 4 × 6 array, in which each unit was kept at a constant temperature and was well thermally isolated individually, was achieved on a silicon substrate by using the present parylene-filled-trench technique. The preliminary experimental results indicated that the present parylene-filled-trench structure exhibited excellent thermal isolation performance, with a very low power requirement of 0.134 mW (K mm 2 ) −1 for heating the isolated silicon unit and a high thermal isolation efficiency of 72.5% between two adjacent units. Accompanied with high-quality isolation performance, the microdevices embedded the present parylene-filled-trench structure to retain a strong mechanical connection larger than 400 kPa between two isolated zones, which is very important for a high-reliability-required micro-electro-mechanical-system (MEMS) device. Considering its room

Silver powder effectiveness and mechanism of silver paste on silicon solar cells

International Nuclear Information System (INIS)

Tsai, Jung-Ting; Lin, Shun-Tian

2013-01-01

Highlights: ► Optimizing the silver paste in 80–85 wt.%. ► Optimizing its particle size in 1–1.5 μm spherical powder. ► The sheet resistance is 4 mΩ/sq during the 860 °C sintering process. ► Redox reaction cause Ag crystallites to grow on the interface. ► A thin layer of silicon oxide (75–150 nm) was formed. - Abstract: Since the silver paste plays a major role in the mass production of silicon solar cells, this work has succeeded in optimizing the silver paste in 80–85 wt.% and optimizing its particle size in 1–1.5 μm spherical powder. As the firing temperature is increased, the growth trend of silver grain is improved. The result of this work has showed that the lowest sheet resistance is 4 mΩ/sq during the 860 °C sintering process. The scanning electron microscope (SEM) observation has showed that the formation of silver oxide is formed during the melting process of glass and triggered redox reaction of Ag crystallites to grow on the interface. It has proven by transmission electron microscope (TEM) that a thin layer of silicon oxide (75–150 nm) was formed, respectively.

Piezoresistive pressure sensor using low-temperature aluminium induced crystallization of sputter-deposited amorphous silicon film

International Nuclear Information System (INIS)

Tiwari, Ruchi; Chandra, Sudhir

2013-01-01

In the present work, we have investigated the piezoresistive properties of silicon films prepared by the radio frequency magnetron sputtering technique, followed by the aluminium induced crystallization (AIC) process. Orientation and grain size of the polysilicon films were studied by x-ray diffraction analysis and found to be in the range 30–50 nm. Annealing of the Al–Si stack on an oxidized silicon substrate was performed in air ambient at 300–550 °C, resulting in layer exchange and transformation from amorphous to polysilicon phase. Van der Pauw and Hall measurement techniques were used to investigate the sheet resistance and carrier mobility of the resulting polycrystalline silicon film. The effect of Al thickness on the sheet resistance and mobility was also studied in the present work. A piezoresistive pressure sensor was fabricated on an oxidized silicon substrate in a Wheatstone bridge configuration, comprising of four piezoresistors made of polysilicon film obtained by the AIC process. The diaphragm was formed by the bulk-micromachining of silicon substrate. The response of the pressure sensor with applied negative pressure in 10–95 kPa range was studied. The gauge factor was estimated to be 5 and 18 for differently located piezoresistors on the diaphragm. The sensitivity of the pressure sensor was measured to be ∼ 30 mV MPa −1 , when the Wheatstone bridge was biased at 1 V input voltage. (paper)

An Angus/Argo study of the neovolcanic zone along the East Pacific rise from the Clipperton fracture zone to 12°N

Science.gov (United States)

Uchupi, E.; Schwab, W. C.; Ballard, R. D.; Cheminee, J. L.; Francheteau, J.; Hekinian, R.; Blackman, D. K.; Sigurdsson, H.

1988-09-01

Still photographs and video images collected along the Neovolcanic Zone of the East Pacific Rise from 10°15'N to 11°53'N show that recent volcanic sheet flows, possibly less than 100 years old, are superimposed on an older sediment-laden pillow terrane. This recent activity is restricted to a narrow zone that crosses two topographic highs at 10°55'N and 11°26'N and diminishes along-axis away from these highs. The association of recent sheet flows with older flows and collapse structures on the overlapping spreading centers at 11°45'N supports the evolutionary model for the occurrence and evolution of overlapping spreading centers by MacDonald and others (1986, 1988).

An Angus/Argo study of the neovolcanic zone along the East Pacific rise from the Clipperton fracture zone to 12°N

Science.gov (United States)

Uchupi, E.; Schwab, W.C.; Ballard, Richard D.; Cheminee, J.L.; Francheteau, Jean; Hekinian, R.; Blackman, D.K.; Sigurdsson, Haraldur

1988-01-01

Still photographs and video images collected along the Neovolcanic Zone of the East Pacific Rise from 10°15′N to 11°53′N show that recent volcanic sheet flows, possibly less than 100 years old, are superimposed on an older sediment-laden pillow terrane. This recent activity is restricted to a narrow zone that crosses two topographic highs at 10°55′N and 11°26′N and diminishes along-axis away from these highs. The association of recent sheet flows with older flows and collapse structures on the overlapping spreading centers at 11°45′N supports the evolutionary model for the occurrence and evolution of overlapping spreading centers by MacDonald and others (1986, 1988).

Flexural Behavior of Self-Compacting RC Continuous Beams Strengthened by CFRP Sheets

Directory of Open Access Journals (Sweden)

Sabih Z. Al-Sarraf

2018-01-01

Full Text Available This search presented an experimental study of the flexural behavior of self-compacting reinforced concrete continuous beams externally strengthened by carbon fiber reinforced polymer (CFRP Sheets. The practical study contained eight self-compacting reinforced concrete continuous beams (with two span, each span had (1500 mm length and (150x250 mm cross sectional dimensions. Seven of these beams strengthened externally by CFRP sheets with and without external anchorage. The experimental variables included location of CFRP sheets and anchor type and location. The results, shows that the beams strengthened externally by CFRP sheets provided improvement in ultimate loads reached (60.71%. The usage of CFRP in the anchorage zone indicated an effective method in comparison to increasing the CFRP sheets lengths or extending them up to the support or under the loading points. Test results also showed that side strengthening provided an effective tool for increasing the load at the cracking stage and also the load capacity and reducing flexural crack widths.

Basic design of on-line analyzer for sheet paper using X-ray fluorescence (XRF) technique

International Nuclear Information System (INIS)

Rony Djokorayono; Ahmad Suntoro; Ikhsan Shobari; Usep Setia Gunawan

2016-01-01

Basic design of on-line analyzer for sheet paper using X-ray fluorescence technique has been carried out. Compared with sampling technique, this X-ray fluorescence technique has some advantages in term of analysis accuracy and time. The design activities performed including the establishment of design requirements, functional requirements, technical requirements, technical specification, detection sub-system design, data acquisition sub-system design, and operator computer console design. This program will use silicon drift or CdTe X-ray detector to detect X-ray fluorescence emitted by elements in sheet paper due to X-ray interaction of a X-ray source, 55 Fe (Ferro-55).This basic design of on-line analyzer for sheet paper using X-ray fluorescence technique should be followed up with the development of detailed design, prototype construction, and field testing. (author)

Introduction of high oxygen concentrations into silicon wafers by high-temperature diffusion

International Nuclear Information System (INIS)

Casse, G.; Glaser, M.; Lemeilleur, F.; Ruzin, A.; Wegrzecki, M.

1999-01-01

The tolerance of silicon detectors to hadron irradiation can be improved by the introduction of a high concentration of oxygen into the starting material. High-resistivity Floating-Zone (FZ) silicon is required for detectors used in particle physics applications. A significantly high oxygen concentration (>10 17 atoms cm -3 ) cannot readily be achieved during the FZ silicon refinement. The diffusion of oxygen at elevated temperatures from a SiO 2 layer grown on both sides of a silicon wafer is a simple and effective technique to achieve high and uniform concentrations of oxygen throughout the bulk of a 300 μm thick silicon wafer

The annealing of phosphorus-implanted silicon investigated at low temperatures

International Nuclear Information System (INIS)

Wagner, C.; Burkhardt, F.

1978-01-01

Phosphorus ions are implanted at 50 keV into misaligned silicon crystals at 20 and 300 0 C, respectively. The ion doses used are 8 x 10 13 and 8 x 10 14 cm -2 , respectively. After annealing treatments the electrical properties of the samples are investigated by measuring Hall effect and sheet resistivity in the range from 300 to 4.2 K. The experimental results indicate some problems which must be taken into account for interpreting Hall effect measurements made at room temperature only. Furthermore the results give some new information on the annealing process in phosphorus implanted silicon and the influence of the implantation parameters. (author)

Radiation hardness of silicon detectors manufactured on epitaxial material and FZ bulk enriched with oxygen, carbon, tin and platinum

CERN Document Server

Ruzin, A; Glaser, M; Lemeilleur, F; Talamonti, R; Watts, S; Zanet, A

1999-01-01

Recent results on the radiation hardness of silicon detectors fabricated on epitaxial and float zone bulk silicon enriched by various impurities, such as carbon, oxygen, tin and platinum are reported. A new methodology of measurements of electrical properties of the devices has been utilized in the experiment. It has been shown that in the case of irradiation by protons, oxygen enriched silicon has better radiation hardness than standard float zone silicon. The carbon enriched silicon detectors, on the other hand, exhibited significantly inferior radiation hardness compared to standard detectors. This study shows for the first time, a violation of the widely used normalization technique of the various particle irradiations by NIEL coefficients. The study has been carried out in the framework of the RD48 (ROSE) collaboration, which studies the radiation hardening of silicon detectors. (5 refs).

Controlling microstructure and texture in magnesium alloy sheet by shear-based deformation processing

Science.gov (United States)

Sagapuram, Dinakar

Application of lightweight Mg sheet is limited by its low workability, both in production of sheet (typically by multistep hot and cold-rolling) and forming of sheet into components. Large strain extrusion machining (LSEM), a constrained chip formation process, is used to create Mg alloy AZ31B sheet in a single deformation step. The deformation in LSEM is shown to be intense simple shear that is confined to a narrow zone, which results in significant deformation-induced heating up to ~ 200°C and reduces the need for pre-heating to realize continuous sheet forms. This study focuses on the texture and microstructure development in the sheet processed by LSEM. Interestingly, deep, highly twinned steady-state layer develops in the workpiece subsurface due to the compressive field ahead of the shear zone. The shear deformation, in conjunction with this pre-deformed twinned layer, results in tilted-basal textures in the sheet with basal planes tilted well away from the surface. These textures are significantly different from those in rolled sheet, where basal planes are nearly parallel to the surface. By controlling the strain path, the basal plane inclination from the surface could be varied in the range of 32-53°. B-fiber (basal plane parallel to LSEM shear plane), associated with basal slip, is the major texture component in the sheet. An additional minor C2-fiber component appears above 250°C due to the thermal activation of pyramidal slip. Together with these textures, microstructure ranges from severely cold-worked to (dynamically) recrystallized type, with the corresponding grain sizes varying from ultrafine- (~ 200 nm) to fine- (2 mum) grained. Small-scale limiting dome height (LDH) confirmed enhanced formability (~ 50% increase in LDH) of LSEM sheet over the conventional rolled sheet. Premature, twinning-driven shear fractures are observed in the rolled sheet with the basal texture. In contrast, LSEM sheet with a tilted-basal texture favorably oriented for

Spatial Variability of accumulation across the Western Greenland Ice Sheet Percolation Zone from ground-penetrating-radar and shallow firn cores

Science.gov (United States)

Lewis, G.; Osterberg, E. C.; Hawley, R. L.; Marshall, H. P.; Birkel, S. D.; Meehan, T. G.; Graeter, K.; Overly, T. B.; McCarthy, F.

2017-12-01

The mass balance of the Greenland Ice Sheet (GrIS) in a warming climate is of critical interest to scientists and the general public in the context of future sea-level rise. Increased melting in the GrIS percolation zone over the past several decades has led to increased mass loss at lower elevations due to recent warming. Uncertainties in mass balance are especially large in regions with sparse and/or outdated in situ measurements. This study is the first to calculate in situ accumulation over a large region of western Greenland since the Program for Arctic Regional Climate Assessment campaign during the 1990s. Here we analyze 5000 km of 400 MHz ground penetrating radar data and sixteen 25-33 m-long firn cores in the western GrIS percolation zone to determine snow accumulation over the past 50 years. The cores and radar data were collected as part of the 2016-2017 Greenland Traverse for Accumulation and Climate Studies (GreenTrACS). With the cores and radar profiles we capture spatial accumulation gradients between 1850-2500 m a.s.l and up to Summit Station. We calculate accumulation rates and use them to validate five widely used regional climate models and to compare with IceBridge snow and accumulation radars. Our results indicate that while the models capture most regional spatial climate patterns, they lack the small-scale spatial variability captured by in situ measurements. Additionally, we evaluate temporal trends in accumulation at ice core locations and throughout the traverse. Finally, we use empirical orthogonal function and correlation analyses to investigate the principal drivers of radar-derived accumulation rates across the western GrIS percolation zone, including major North Atlantic climate modes such as the North Atlantic Oscillation, Atlantic Multidecadal Oscillation, and Greenland Blocking Index.

Radiation damage in lithium-counterdoped N/P silicon solar cells

Science.gov (United States)

Hermann, A. M.; Swartz, C. K.; Brandhorst, H. W., Jr.; Weinberg, I.

1980-01-01

The radiation resistance and low-temperature annealing properties of lithium-counterdoped n(+)-p silicon solar cells are investigated. Cells fabricated from float zone and Czochralski grown silicon were irradiated with 1 MeV electrons and their performance compared to that of 0.35 ohm-cm control cells. The float zone cells demonstrated superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Annealing kinetics were found to lie between first and second order for relatively short times, and the most likely annealing mechanism was found to be the diffusion of lithium to defects with the subsequent neutralization of defects by combination with lithium. Cells with zero lithium gradients exhibited the best radiation resistance.

Self-assembling peptide hydrogels immobilized on silicon surfaces

International Nuclear Information System (INIS)

Franchi, Stefano; Battocchio, Chiara; Galluzzi, Martina; Navisse, Emanuele; Zamuner, Annj; Dettin, Monica; Iucci, Giovanna

2016-01-01

The hydrogels of self-assembling ionic complementary peptides have collected in the scientific community increasing consensus as mimetics of the extracellular matrix that can offer 3D supports for cell growth or be vehicles for the delivery of stem cells or drugs. Such scaffolds have also been proposed as bone substitutes for small defects as they promote beneficial effects on human osteoblasts. In this context, our research deals with the introduction of a layer of self-assembling peptides on a silicon surface by covalent anchoring and subsequent physisorption. In this work, we present a spectroscopic investigation of the proposed bioactive scaffolds, carried out by surface-sensitive spectroscopic techniques such as XPS (X-ray photoelectron spectroscopy) and RAIRS (Reflection Absorption Infrared Spectroscopy) and by state-of-the-art synchrotron radiation methodologies such as angle dependent NEXAFS (Near Edge X-ray Absorption Fine Structure). XPS studies confirmed the change in the surface composition in agreement with the proposed enrichments, and led to assess the self-assembling peptide chemical stability. NEXAFS spectra, collected in angular dependent mode at the N K-edge, allowed to investigate the self-assembling behavior of the macromolecules, as well as to determine their molecular orientation on the substrate. Furthermore, Infrared Spectroscopy measurements demonstrated that the peptide maintains its secondary structure (β-sheet anti-parallel) after deposition on the silicon surface. The complementary information acquired by means of XPS, NEXAFS and RAIRS lead to hypothesize a “layer-by-layer” arrangement of the immobilized peptides, giving rise to an ordered 3D nanostructure. - Highlights: • A self-assembling peptide (SAP) was covalently immobilized of on a flat silicon surface. • A physisorbed SAP layer was grown on top of the covalently immobilized peptide layer. • Molecular order and orientation of the peptide overlayer on the flat silicon

Self-assembling peptide hydrogels immobilized on silicon surfaces

Energy Technology Data Exchange (ETDEWEB)

Franchi, Stefano; Battocchio, Chiara; Galluzzi, Martina; Navisse, Emanuele [Department of Sciences, University “Roma Tre”, Via della Vasca Navale 79, Roma, 00146 (Italy); Zamuner, Annj; Dettin, Monica [Department of Industrial Engineering, University of Padua, Via Marzolo, 9, Padua, 35131 (Italy); Iucci, Giovanna, E-mail: giovanna.iucci@uniroma3.it [Department of Sciences, University “Roma Tre”, Via della Vasca Navale 79, Roma, 00146 (Italy)

2016-12-01

The hydrogels of self-assembling ionic complementary peptides have collected in the scientific community increasing consensus as mimetics of the extracellular matrix that can offer 3D supports for cell growth or be vehicles for the delivery of stem cells or drugs. Such scaffolds have also been proposed as bone substitutes for small defects as they promote beneficial effects on human osteoblasts. In this context, our research deals with the introduction of a layer of self-assembling peptides on a silicon surface by covalent anchoring and subsequent physisorption. In this work, we present a spectroscopic investigation of the proposed bioactive scaffolds, carried out by surface-sensitive spectroscopic techniques such as XPS (X-ray photoelectron spectroscopy) and RAIRS (Reflection Absorption Infrared Spectroscopy) and by state-of-the-art synchrotron radiation methodologies such as angle dependent NEXAFS (Near Edge X-ray Absorption Fine Structure). XPS studies confirmed the change in the surface composition in agreement with the proposed enrichments, and led to assess the self-assembling peptide chemical stability. NEXAFS spectra, collected in angular dependent mode at the N K-edge, allowed to investigate the self-assembling behavior of the macromolecules, as well as to determine their molecular orientation on the substrate. Furthermore, Infrared Spectroscopy measurements demonstrated that the peptide maintains its secondary structure (β-sheet anti-parallel) after deposition on the silicon surface. The complementary information acquired by means of XPS, NEXAFS and RAIRS lead to hypothesize a “layer-by-layer” arrangement of the immobilized peptides, giving rise to an ordered 3D nanostructure. - Highlights: • A self-assembling peptide (SAP) was covalently immobilized of on a flat silicon surface. • A physisorbed SAP layer was grown on top of the covalently immobilized peptide layer. • Molecular order and orientation of the peptide overlayer on the flat silicon

RE Data Explorer: Supporting Renewable Energy Zones to Enable Low Emission Development

Energy Technology Data Exchange (ETDEWEB)

Cox, Sadie

2016-10-01

This fact sheet overviews the benefits of using the RE Data Explorer tool to analyze and develop renewable energy zones. Renewable energy zones are developed through a transmission planning and approval process customized for renewable energy. RE Data Explorer analysis can feed into broader stakeholder discussions and allow stakeholders to easily visualize potential zones. Stakeholders can access pertinent data to inform transmission planning and enable investment.

Next generation structural silicone glazing

Directory of Open Access Journals (Sweden)

Charles D. Clift

2015-06-01

Full Text Available This paper presents an advanced engineering evaluation, using nonlinear analysis of hyper elastic material that provides significant improvement to structural silicone glazing (SSG design in high performance curtain wall systems. Very high cladding wind pressures required in hurricane zones often result in bulky SSG profile dimensions. Architectural desire for aesthetically slender curtain wall framing sight-lines in combination with a desire to reduce aluminium usage led to optimization of silicone material geometry for better stress distribution.To accomplish accurate simulation of predicted behaviour under structural load, robust stress-strain curves of the silicone material are essential. The silicone manufacturer provided physical property testing via a specialized laboratory protocol. A series of rigorous curve fit techniques were then made to closely model test data in the finite element computer analysis that accounts for nonlinear strain of hyper elastic silicone.Comparison of this advanced design technique to traditional SSG design highlights differences in stress distribution contours in the silicone material. Simplified structural engineering per the traditional SSG design method does not provide accurate forecasting of material and stress optimization as shown in the advanced design.Full-scale specimens subject to structural load testing were performed to verify the design capacity, not only for high wind pressure values, but also for debris impact per ASTM E1886 and ASTM E1996. Also, construction of the test specimens allowed development of SSG installation techniques necessitated by the unique geometry of the silicone profile. Finally, correlation of physical test results with theoretical simulations is made, so evaluation of design confidence is possible. This design technique will introduce significant engineering advancement to the curtain wall industry.

Electrical and electron microscopy observations on defects in ion implanted silicon

International Nuclear Information System (INIS)

Ling, H.

1978-01-01

Silicon single crystals were implanted with 100 keV phosphorus ions to a dose of 2 x 10 16 ions/cm 2 at both room-temperature and 600 0 C. They were isochronally annealed at temperatures ranging from 400 0 C to 900 0 C. Sheet resistivity measurements of the specimens were taken after each anneal, together with corresponding transmission electron micrographs

Preparation and characterization of tempered tungsten layers on single crystalline silicon

International Nuclear Information System (INIS)

Nitzsche, K.; Knedlik, C.; Tippmann, H.; Spiess, L.; Harman, R.; Vanek, O.; Tvarozek, V.

1984-01-01

Tungsten layers have been deposited on single crystalline silicon by sputtering and characterized by measurements of the sheet resistance by a linear four point method and the van der Pauw method. The influence of tempering under argon on the resistance has been studied. By means of the RBS spectroscopy it was found that the increase in the specific resistance is caused by interdiffusion

Magneto-hydrodynamics of coupled fluid–sheet interface with mass suction and blowing

International Nuclear Information System (INIS)

Ahmad, R.

2016-01-01

There are large number of studies which prescribe the kinematics of the sheet and ignore the sheet's mechanics. However, the current boundary layer analysis investigates the mechanics of both the electrically conducting fluid and a permeable sheet, which makes it distinct from the other studies in the literature. One of the objectives of the current study is to (i) examine the behaviour of magnetic field effect for both the surface and the electrically conducting fluid (ii) investigate the heat and mass transfer between a permeable sheet and the surrounding electrically conducting fluid across the hydro, thermal and mass boundary layers. Self-similar solutions are obtained by considering the RK45 technique. Analytical solution is also found for the stretching sheet case. The skin friction dual solutions are presented for various types of sheet. The influence of pertinent parameters on the dimensionless velocity, shear stress, temperature, mass concentration, heat and mass transfer rates on the fluid–sheet interface is presented graphically as well as numerically. The obtained results are of potential benefit for studying the electrically conducting flow over various soft surfaces such as synthetic plastics, soft silicone sheet and soft synthetic rubber sheet. These surfaces are easily deformed by thermal fluctuations or thermal stresses. - Highlights: • The momentum equation is modelled for both the surrounding MHD fluid and the sheet with the effects of mass suction and blowing. • The current study further investigates the heat and mass transfer characteristics between a permeable sheet and the surrounding electrically conducting fluid across the thermal and mass boundary layers. • Both the approximated and analytical techniques have been included for the purpose of comparison, and the perfect numerical agreements have been established with the previous studies. • Dual solutions for the skin friction coefficients are found for various categories of

The Effect of Topographic Shadowing by Ice on Irradiance in the Greenland Ice Sheet Ablation Zone

Science.gov (United States)

Leidman, S. Z.; Rennermalm, A. K.; Ryan, J.; Cooper, M. G.; Smith, L. C.

2017-12-01

Accurately predicting runoff contributions to global sea level rise requires more refined surface mass balance (SMB) models of the Greenland Ice Sheet (GrIS). Topographic shadowing has shown to be important in the SMB of snow-covered regions, yet SMB models for the GrIS generally ignore how surface topography affects spatial variability of incoming solar radiation on a surface. In the ablation zone of Southwest Greenland, deeply incised supraglacial drainage features, fracturing, and large-scale bed deformation result in extensive areas of rough surface topography. This topography blocks direct radiation such that shadowed areas receive less energy for melting while other topographic features such as peaks recieve more energy. In this study, we quantify how shadowing from local topography features changes incoming solar radiation. We apply the ArcGIS Pro Solar Radiation Toolset to calculate the direct and diffuse irradiance in sunlit and shadowed areas by determining the sun's movement for every half hour increment of 2016. Multiple digital elevation models (DEMs) with spatial resolutions ranging from 0.06 to 5m were derived from fixed wing and quadcopter UAV imagery collected in summer 2016 and the ArcticDEM dataset. Our findings show that shadowing significantly decreases irradiance compared to smoothed surfaces where local topography is removed. This decrease is exponentially proportional to the DEM pixel sized with 5m DEMs only able to capture a small percentage of the effect. Applying these calculations to the ArcticDEM to cover a larger study area indicates that decreases in irradiance are nonlinearly proportional to elevation with highly crevassed areas showing a larger effect from shadowing. Even so, shading at higher elevations reduces irradiance enough to result in several centimeters snow water equivalence (SWE) per year of over-prediction of runoff in SMB models. Furthermore, analysis of solar radiation products shows that shadowing predicts albedo

Seismic interpretation of the triangle zone at Jumping Pound, Alberta

Energy Technology Data Exchange (ETDEWEB)

Slotboom, R. T. [Amerada Hess Canada Ltd., Calgary, AB (Canada); Lawton, D. C.; Spratt, D. A. [Calgary Univ., AB (Canada). Dept. of Geology and Geophysics

1996-06-01

The triangle zone at Jumping Point, Alberta was characterized using seismic survey data as a NW-SE-trending antiformal stack of thrust sheets involving Cretaceous rocks that have been wedged into the foreland between two detachments. Three major thrust sheets of Lower and Upper Cretaceous strata have been stacked to form the main extremity of the wedge. The structure is tightly folded at Jumping Point, and broadens northwest along the strike. 13 refs., 8 figs.

Millennial-scale instability of the Antarctic Ice Sheet during the last glaciation.

NARCIS (Netherlands)

Kanfoush, S.L.; Hodell, D.A.; Charles, C.D.; Guilderson, T.P.; Mortyn, P.G.

2000-01-01

Records of ice-rafted detritus (IRD) concentration in deep-sea cores from the southeast Atlantic Ocean reveal millennial-scale pulses of IRD delivery between 20,000 and 74,000 years ago. Prominent IRD layers correlate across the Polar Frontal Zone, suggesting episodes of Antarctic Ice Sheet

Development of low-cost silicon crystal growth techniques for terrestrial photovoltaic solar energy conversion

Science.gov (United States)

Zoutendyk, J. A.

1976-01-01

Because of the growing need for new sources of electrical energy, photovoltaic solar energy conversion is being developed. Photovoltaic devices are now being produced mainly from silicon wafers obtained from the slicing and polishing of cylindrically shaped single crystal ingots. Inherently high-cost processes now being used must either be eliminated or modified to provide low-cost crystalline silicon. Basic to this pursuit is the development of new or modified methods of crystal growth and, if necessary, crystal cutting. If silicon could be grown in a form requiring no cutting, a significant cost saving would potentially be realized. Therefore, several techniques for growth in the form of ribbons or sheets are being explored. In addition, novel techniques for low-cost ingot growth and cutting are under investigation.

Radiation damage in silicon. Defect analysis and detector properties

Energy Technology Data Exchange (ETDEWEB)

Hoenniger, F.

2008-01-15

Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after {gamma}-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO{sub i}, C{sub i}O{sub i}, C{sub i}C{sub s}, VP or V{sub 2} several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO{sub 2} defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep

Radiation damage in silicon. Defect analysis and detector properties

International Nuclear Information System (INIS)

Hoenniger, F.

2008-01-01

Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after γ-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO i , C i O i , C i C s , VP or V 2 several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO 2 defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep acceptor, a model has been introduced to

The use of silicone occlusive sheeting (Sil-K) and silicone occlusive gel (epiderm) in the prevention of hypertrophic scar formation

NARCIS (Netherlands)

Niessen, FB; Spauwen, PHM; Robinson, PH; Fidler, [No Value; Kon, M

The development of hypertrophic scars and keloids is an unsolved problem in the process of found healing. For this reason, a successful treatment to prevent excessive scar formation still has not been found. Over the last decade, however, a promising new treatment has been introduced. Silicone

Light-Weight Free-Standing Carbon Nanotube-Silicon Films for Anodes of Lithium Ion Batteries

KAUST Repository

Cui, Li-Feng; Hu, Liangbing; Choi, Jang Wook; Cui, Yi

2010-01-01

and Si as a high capacity anode material for Li-ion battery. Such free-standing film has a low sheet resistance of ∼30 Ohm/sq. It shows a high specific charge storage capacity (∼2000 mAh/g) and a good cycling life, superior to pure sputtered-on silicon

Mechanics of silicon nitride thin-film stressors on a transistor-like geometry

Directory of Open Access Journals (Sweden)

S. Reboh

2013-10-01

Full Text Available To understand the behavior of silicon nitride capping etch stopping layer stressors in nanoscale microelectronics devices, a simplified structure mimicking typical transistor geometries was studied. Elastic strains in the silicon substrate were mapped using dark-field electron holography. The results were interpreted with the aid of finite element method modeling. We show, in a counterintuitive sense, that the stresses developed by the film in the vertical sections around the transistor gate can reach much higher values than the full sheet reference. This is an important insight for advanced technology nodes where the vertical contribution of such liners is predominant over the horizontal part.

The difference of phase distributions in silicon after indentation with Berkovich and spherical indenters

International Nuclear Information System (INIS)

Zarudi, I.; Zhang, L.C.; Cheong, W.C.D.; Yu, T.X.

2005-01-01

This study analyses the microstructure of monocrystalline silicon after indentation with a Berkovich and spherical indenter. Transmission electron microscopy on cross section view samples was used to explore the detailed distributions of various phases in the subsurfaces of indented silicon. It was found that an increase of the P max would promote the growth of the crystalline R8/BC8 phase at the bottom of the deformation zone. Microcracks were always generated in the range of the P max studied. It was also found that the deformation zones formed by the Berkovich and spherical indenters have very different phase distribution characteristics. A molecular dynamics simulation and finite element analysis supported the experimental observations and suggested that the distribution of the crystalline phases in the transformation zone after indentation was highly stress-dependent

Zone refining of sintered, microwave-derived YBCO superconductors

International Nuclear Information System (INIS)

Warrier, K.G.K.; Varma, H.K.; Mani, T.V.; Damodaran, A.D.; Balachandran, U.

1993-07-01

Post-sintering treatments such as zone melting under thermal gradient has been conducted on sintered YBCO tape cast films. YBCO precursor powder was derived through decomposition of a mixture of nitrates of cations in a microwave oven for ∼4 min. The resulting powder was characterized and made into thin sheets by tape casting and then sintered at 945 C for 5 h. The sintered tapes were subjected to repeated zone refining operations at relatively high speeds of ∼30 mm/h. A microstructure having uniformly oriented grains in the a-b plane throughout the bulk of the sample was obtained by three repeated zone refining operations. Details of precursor preparation, microwave processing and its advantages, zone refining conditions, and microstructural features are presented in this paper

Silicon Ingot Casting - Heat Exchanger Method (HEM). Multi-Wire Slicing - Fixed Abrasive Slicing Technique (Fast). Phase 4 Silicon Sheet Growth Development for the Large Area Sheet Task of the Low-Cost Solar Array Project

Science.gov (United States)

Schmid, F.

1981-01-01

The crystallinity of large HEM silicon ingots as a function of heat flow conditions is investigated. A balanced heat flow at the bottom of the ingot restricts spurious nucleation to the edge of the melted-back seed in contact with the crucible. Homogeneous resistivity distribution over all the ingot has been achieved. The positioning of diamonds electroplated on wirepacks used to slice silicon crystals is considered. The electroplating of diamonds on only the cutting edge is described and the improved slicing performance of these wires evaluated. An economic analysis of value added costs of HEM ingot casting and band saw sectioning indicates the projected add on cost of HEM is well below the 1986 allocation.

Light-Weight Free-Standing Carbon Nanotube-Silicon Films for Anodes of Lithium Ion Batteries

KAUST Repository

Cui, Li-Feng

2010-07-27

Silicon is an attractive alloy-type anode material because of its highest known capacity (4200 mAh/g). However, lithium insertion into and extraction from silicon are accompanied by a huge volume change, up to 300%, which induces a strong strain on silicon and causes pulverization and rapid capacity fading due to the loss of the electrical contact between part of silicon and current collector. Si nanostructures such as nanowires, which are chemically and electrically bonded to the current collector, can overcome the pulverization problem, however, the heavy metal current collectors in these systems are larger in weight than Si active material. Herein we report a novel anode structure free of heavy metal current collectors by integrating a flexible, conductive carbon nanotube (CNT) network into a Si anode. The composite film is free-standing and has a structure similar to the steel bar reinforced concrete, where the infiltrated CNT network functions as both mechanical support and electrical conductor and Si as a high capacity anode material for Li-ion battery. Such free-standing film has a low sheet resistance of ∼30 Ohm/sq. It shows a high specific charge storage capacity (∼2000 mAh/g) and a good cycling life, superior to pure sputtered-on silicon films with similar thicknesses. Scanning electron micrographs show that Si is still connected by the CNT network even when small breaking or cracks appear in the film after cycling. The film can also "ripple up" to release the strain of a large volume change during lithium intercalation. The conductive composite film can function as both anode active material and current collector. It offers ∼10 times improvement in specific capacity compared with widely used graphite/copper anode sheets. © 2010 American Chemical Society.

Uruguay project - Metalic silicon manufacturing. Palmar location study

International Nuclear Information System (INIS)

2003-01-01

This work is about the Soriano town possibilities offered to Rima Industrial S.A in relation with the metallic silicon project in Uruguay. In this zone there is the Palmar hydroelectric plant with a capacity of 33 MW and its development is part of the Rio Negro river

A simple holistic hypothesis for the self-destruction of ice sheets

Science.gov (United States)

Hughes, T.

2011-07-01

Ice sheets are the only components of Earth's climate system that can self-destruct. This paper presents the quantitative force balance for bottom-up modeling of ice sheets, as first presented qualitatively in this journal as a way to quantify ice-bed uncoupling leading to self-destruction of ice sheets ( Hughes, 2009a). Rapid changes in sea level and climate can result if a large ice-sheet self-destructs quickly, as did the former Laurentide Ice Sheet of North America between 8100 and 7900 BP, thereby terminating the last cycle of Quaternary glaciation. Ice streams discharge up to 90 percent of ice from past and present ice sheets. A hypothesis is presented in which self-destruction of an ice sheet begins when ubiquitous ice-bed decoupling, quantified as a floating fraction of ice, proceeds along ice streams. This causes ice streams to surge and reduce thickness by some 90 percent, and height above sea level by up to 99 percent for floating ice, so the ice sheet undergoes gravitational collapse. Ice collapsing over marine embayments becomes floating ice shelves that may then disintegrate rapidly. This floods the world ocean with icebergs that reduce the ocean-to-atmosphere heat exchange, thereby triggering climate change. Calving bays migrate up low stagnating ice streams and carve out the accumulation zone of the collapsed ice sheet, which prevents its recovery, decreases Earth's albedo, and terminates the glaciation cycle. This sequence of events may coincide with a proposed life cycle of ice streams that drain the ice sheet. A first-order treatment of these life cycles is presented that depends on the longitudinal force balance along the flowbands of ice streams and gives a first approximation to ice-bed uncoupling at snapshots during gravitational collapse into ice shelves that disintegrate, thereby removing the ice sheet. The stability of the Antarctic Ice Sheet is assessed using this bottom-up approach.

Multifunctional Graphene-Silicone Elastomer Nanocomposite, Method of Making the Same, and Uses Thereof

Science.gov (United States)

Pan, Shuyang (Inventor); Aksay, Ilhan A. (Inventor); Prud'Homme, Robert K. (Inventor)

2018-01-01

A nanocomposite composition having a silicone elastomer matrix having therein a filler loading of greater than 0.05 wt %, based on total nanocomposite weight, wherein the filler is functional graphene sheets (FGS) having a surface area of from 300 sq m/g to 2630 sq m2/g; and a method for producing the nanocomposite and uses thereof.

Unequal ice-sheet erosional impacts across low-relief shield terrain in northern Fennoscandia

Science.gov (United States)

Ebert, Karin; Hall, Adrian M.; Kleman, Johan; Andersson, Jannike

2015-03-01

Much previous work on Late Cenozoic glacial erosion patterns in bedrock has focussed on mountain areas. Here we identify varying impacts of ice sheet erosion on the low-relief bedrock surface of the Fennoscandian shield, and examine the geological, topographical and glaciological controls on these patterns. We combine GIS-mapping of topographical, hydrological and weathering data with field observations. We identify and investigate areas with similar geology and general low relief that show different degrees of ice sheet erosional impact, despite similar ice cover histories. On two transects with a total area of ~ 84 000 km2 across the northern Fennoscandian shield, we first establish patterns of glacial erosion and then examine why glacially streamlined areas exist adjacent to areas of negligible glacial erosion. The northern transect includes two areas of exceptional glacial preservation, the Parkajoki area in Sweden and the so-called ice divide zone in Finland, each of which preserve tors and deep saprolite covers. The southern transect, overlapping in the northern part with the first transect, includes areas of well developed glacial streamlining, with bedrock areas stripped of loose material and barely any weathering remnants. For both areas, we firstly present contrasting indicators for ice sheet erosional impact: streamlined and non-streamlined inselbergs; parallel and dendritic/rectangular drainage patterns; and the absence and presence of Neogene weathering remnants. This is followed by an investigation of factors that possibly influence ice sheet erosional impact: ice cover history, ice cover duration and thickness, bedrock type and structure, and topography. We find that the erosional impact of the Fennoscandian ice sheet has varied across the study area. Distinct zones of ice sheet erosion are identified in which indicators of either low or high erosion coexist in the same parts of the transects. No direct impact of rock type on glacial erosion patterns

Greenland ice-sheet contribution to sea-level rise buffered by meltwater storage in firn.

Science.gov (United States)

Harper, J; Humphrey, N; Pfeffer, W T; Brown, J; Fettweis, X

2012-11-08

Surface melt on the Greenland ice sheet has shown increasing trends in areal extent and duration since the beginning of the satellite era. Records for melt were broken in 2005, 2007, 2010 and 2012. Much of the increased surface melt is occurring in the percolation zone, a region of the accumulation area that is perennially covered by snow and firn (partly compacted snow). The fate of melt water in the percolation zone is poorly constrained: some may travel away from its point of origin and eventually influence the ice sheet's flow dynamics and mass balance and the global sea level, whereas some may simply infiltrate into cold snow or firn and refreeze with none of these effects. Here we quantify the existing water storage capacity of the percolation zone of the Greenland ice sheet and show the potential for hundreds of gigatonnes of meltwater storage. We collected in situ observations of firn structure and meltwater retention along a roughly 85-kilometre-long transect of the melting accumulation area. Our data show that repeated infiltration events in which melt water penetrates deeply (more than 10 metres) eventually fill all pore space with water. As future surface melt intensifies under Arctic warming, a fraction of melt water that would otherwise contribute to sea-level rise will fill existing pore space of the percolation zone. We estimate the lower and upper bounds of this storage sink to be 322 ± 44 gigatonnes and  1,289(+388)(-252) gigatonnes, respectively. Furthermore, we find that decades are required to fill this pore space under a range of plausible future climate conditions. Hence, routing of surface melt water into filling the pore space of the firn column will delay expansion of the area contributing to sea-level rise, although once the pore space is filled it cannot quickly be regenerated.

Superplastic Forming/Adhesive Bonding of Aluminum (SPF/AB) Multi-Sheet Structures

Science.gov (United States)

Wagner, John A. (Technical Monitor); Will, Jeff D.; Cotton, James D.

2003-01-01

A significant fraction of airframe structure consists of stiffened panels that are costly and difficult to fabricate. This program explored a potentially lower-cost processing route for producing such panels. The alternative process sought to apply concurrent superplastic forming and adhesive bonding of aluminum alloy sheets. Processing conditions were chosen to balance adequate superplasticity of the alloy with thermal stability of the adhesive. As a first objective, an air-quenchable, superplastic aluminum-lithium alloy and a low-volatile content, low-viscosity adhesive with compatible forming/curing cycles were identified. A four-sheet forming pack was assembled which consisted of a welded two-sheet core separated from the face sheets by a layer of adhesive. Despite some preliminary success, of over 30 forming trials none was completely successful. The main problem was inadequate superplasticity in the heat-affected zones of the rib welds, which generally fractured prior to completion of the forming cycle. The welds are a necessary component in producing internal ribs by the 'four-sheet' process. Other challenges, such as surface preparation and adhesive bonding, were adequately solved. But without the larger issue of tearing at the weld locations, complex panel fabrication by SPF/AB does not appear viable.

Buckling instabilities of subducted lithosphere beneath the transition zone

NARCIS (Netherlands)

Ribe, N.M.; Stutzmann, E.; Ren, Y.; Hilst, R.D. van der

2007-01-01

A sheet of viscous fluid poured onto a surface buckles periodically to generate a pile of regular folds. Recent tomographic images beneath subduction zones, together with quantitative fluid mechanical scaling laws, suggest that a similar instability can occur when slabs of subducted oceanic

Defect features, texture and mechanical properties of friction stir welded lap joints of 2A97 Al-Li alloy thin sheets

Energy Technology Data Exchange (ETDEWEB)

Chen, Haiyan [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an 710072 (China); Shaanxi Key Laboratory of Friction Welding Technologies, Northwestern Polytechnical University, Xi' an 710072 (China); Fu, Li, E-mail: fuli@nwpu.edu.cn [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an 710072 (China); Shaanxi Key Laboratory of Friction Welding Technologies, Northwestern Polytechnical University, Xi' an 710072 (China); Liang, Pei; Liu, Fenjun [Shaanxi Key Laboratory of Friction Welding Technologies, Northwestern Polytechnical University, Xi' an 710072 (China)

2017-03-15

1.4 mm 2A97 Al-Li alloy thin sheets were welded by friction stir lap welding using the stirring tools with different pin length at different rotational speeds. The influence of pin length and rotational speed on the defect features and mechanical properties of lap joints were investigated in detail. Microstructure observation shows that the hook defect geometry and size mainly varies with the pin length instead of the rotational speed. The size of hook defects on both the advancing side (AS) and the retreating side (RS) increased with increasing the pin length, leading to the effective sheet thickness decreased accordingly. Electron backscatter diffraction analysis reveals that the weld zones, especially the nugget zone (NZ), have the much lower texture intensity than the base metal. Some new texture components are formed in the thermo-mechanical affected zone (TMAZ) and the NZ of joint. Lap shear test results show that the failure load of joints generally decreases with increasing the pin length and the rotational speed. The joints failed during the lap shear tests at three locations: the lap interface, the RS of the top sheet and the AS of the bottom sheet. The fracture locations are mainly determined by the hook defects. - Highlights: • Hook defect size mainly varies with the pin length of stirring tool. • The proportion of LAGBs and substructured grains increases from NZ to TMAZ. • Weld zones, especially the NZ, have the much lower texture intensity than the BM. • Lap shear failure load and fracture location of joints is relative to the hook defects.

Defect features, texture and mechanical properties of friction stir welded lap joints of 2A97 Al-Li alloy thin sheets

International Nuclear Information System (INIS)

Chen, Haiyan; Fu, Li; Liang, Pei; Liu, Fenjun

2017-01-01

1.4 mm 2A97 Al-Li alloy thin sheets were welded by friction stir lap welding using the stirring tools with different pin length at different rotational speeds. The influence of pin length and rotational speed on the defect features and mechanical properties of lap joints were investigated in detail. Microstructure observation shows that the hook defect geometry and size mainly varies with the pin length instead of the rotational speed. The size of hook defects on both the advancing side (AS) and the retreating side (RS) increased with increasing the pin length, leading to the effective sheet thickness decreased accordingly. Electron backscatter diffraction analysis reveals that the weld zones, especially the nugget zone (NZ), have the much lower texture intensity than the base metal. Some new texture components are formed in the thermo-mechanical affected zone (TMAZ) and the NZ of joint. Lap shear test results show that the failure load of joints generally decreases with increasing the pin length and the rotational speed. The joints failed during the lap shear tests at three locations: the lap interface, the RS of the top sheet and the AS of the bottom sheet. The fracture locations are mainly determined by the hook defects. - Highlights: • Hook defect size mainly varies with the pin length of stirring tool. • The proportion of LAGBs and substructured grains increases from NZ to TMAZ. • Weld zones, especially the NZ, have the much lower texture intensity than the BM. • Lap shear failure load and fracture location of joints is relative to the hook defects.

Synthesis of silicon nanocomposite for printable photovoltaic devices on flexible substrate

Science.gov (United States)

Odo, E. A.; Faremi, A. A.

2017-06-01

Renewed interest has been established in the preparation of silicon nanoparticles for electronic device applications. In this work, we report on the production of silicon powders using a simple ball mill and of silicon nanocomposite ink for screen-printable photovoltaic device on a flexible substrate. Bulk single crystalline silicon was milled for 25 h in the ball mill. The structural properties of the produced silicon nanoparticles were investigated using X-ray diffraction (XRD) and transmission electron microscopy. The results show that the particles remained highly crystalline, though transformed from their original single crystalline state to polycrystalline. The elemental composition using energy dispersive X-ray florescence spectroscopy (EDXRF) revealed that contamination from iron (Fe) and chromium (Cr) of the milling media and oxygen from the atmosphere were insignificant. The size distribution of the nanoparticles follows a lognormal pattern that ranges from 60 nm to about 1.2 μm and a mean particle size of about 103 nm. Electrical characterization of screen-printed PN structures of the nanocomposite formed by embedding the powder into a suitable water-soluble polymer on Kapton sheet reveals an enhanced photocurrent transport resulting from photo-induced carrier generation in the depletion region with energy greater that the Schottky barrier height at the metal-composite interface.

Growth of carbon fibres, sheets and tubes on diamond films under high power plasma etching conditions

Energy Technology Data Exchange (ETDEWEB)

Villalpando, I. [Centro de Investigacion de los Recursos Naturales, Antigua Normal Rural, Salaices, Lopez, Chihuahua (Mexico); John, P.; Wilson, J. I. B., E-mail: isaelav@hotmail.com [School of Engineering and Physical Sciences, Heriot-Watt University, Riccarton, Edinburgh, EH14-4AS (United Kingdom)

2017-11-01

The application of diamond as a plasma facing material for fusion reactors can be limited by unknown reactions between diamond and the chamber materials transported by the plasma. Transformation of diamond to other structures can cause problems such as contamination of the plasma with loose particles or retention of gases. We have seen that diamond thin films are eroded under hydrogen plasma etching, but if silicon is present the growth of various carbon structures on diamond films is observed. We have produced carbon with different morphologies on diamond films including fibres, sheets with flower-like shapes and tubes and proposed growth mechanisms based on the results of scanning electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Sample surfaces contain silicon and are oxidised having COO and CO groups as seen by XP S analysis. Raman analyses revealed a spectrum typical for graphite combined with that from diamond that remains on the surface after hydrogen bombardment. The results of this sturdy show the experimental conditions in which carbon fibres, sheets and tubes are produced under high-power hydrogen etching of diamond films and open the possibility to other applications such as catalysts, sensors and the production of electrodes. (Author)

Growth of carbon fibres, sheets and tubes on diamond films under high power plasma etching conditions

International Nuclear Information System (INIS)

Villalpando, I.; John, P.; Wilson, J. I. B.

2017-01-01

The application of diamond as a plasma facing material for fusion reactors can be limited by unknown reactions between diamond and the chamber materials transported by the plasma. Transformation of diamond to other structures can cause problems such as contamination of the plasma with loose particles or retention of gases. We have seen that diamond thin films are eroded under hydrogen plasma etching, but if silicon is present the growth of various carbon structures on diamond films is observed. We have produced carbon with different morphologies on diamond films including fibres, sheets with flower-like shapes and tubes and proposed growth mechanisms based on the results of scanning electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Sample surfaces contain silicon and are oxidised having COO and CO groups as seen by XP S analysis. Raman analyses revealed a spectrum typical for graphite combined with that from diamond that remains on the surface after hydrogen bombardment. The results of this sturdy show the experimental conditions in which carbon fibres, sheets and tubes are produced under high-power hydrogen etching of diamond films and open the possibility to other applications such as catalysts, sensors and the production of electrodes. (Author)

Electrical and optical properties of sub-10 nm nickel silicide films for silicon solar cells

International Nuclear Information System (INIS)

Brahmi, Hatem; Ravipati, Srikanth; Yarali, Milad; Wang, Weijie; Ryou, Jae-Hyun; Mavrokefalos, Anastassios; Shervin, Shahab

2017-01-01

Highly conductive and transparent films of ultra-thin p-type nickel silicide films have been prepared by RF magnetron sputtering of nickel on silicon substrates followed by rapid thermal annealing in an inert environment in the temperature range 400–600 °C. The films are uniform throughout the wafer with thicknesses in the range of 3–6 nm. The electrical and optical properties are presented for nickel silicide films with varying thickness. The Drude–Lorentz model and Fresnel equations were used to calculate the dielectric properties, sheet resistance, absorption and transmission of the films. These ultrathin nickel silicide films have excellent optoelectronic properties for p-type contacts with optical transparencies up to 80% and sheet resistance as low as ∼0.15 µΩ cm. Furthermore, it was shown that the use of a simple anti-reflection (AR) coating can recover most of the reflected light approaching the values of a standard Si solar cell with the same AR coating. Overall, the combination of ultra-low thickness, high transmittance, low sheet resistance and ability to recover the reflected light by utilizing standard AR coating makes them ideal for utilization in silicon based photovoltaic technologies as a p-type transparent conductor. (paper)

Electrical and optical properties of sub-10 nm nickel silicide films for silicon solar cells

Science.gov (United States)

Brahmi, Hatem; Ravipati, Srikanth; Yarali, Milad; Shervin, Shahab; Wang, Weijie; Ryou, Jae-Hyun; Mavrokefalos, Anastassios

2017-01-01

Highly conductive and transparent films of ultra-thin p-type nickel silicide films have been prepared by RF magnetron sputtering of nickel on silicon substrates followed by rapid thermal annealing in an inert environment in the temperature range 400-600 °C. The films are uniform throughout the wafer with thicknesses in the range of 3-6 nm. The electrical and optical properties are presented for nickel silicide films with varying thickness. The Drude-Lorentz model and Fresnel equations were used to calculate the dielectric properties, sheet resistance, absorption and transmission of the films. These ultrathin nickel silicide films have excellent optoelectronic properties for p-type contacts with optical transparencies up to 80% and sheet resistance as low as ~0.15 µΩ cm. Furthermore, it was shown that the use of a simple anti-reflection (AR) coating can recover most of the reflected light approaching the values of a standard Si solar cell with the same AR coating. Overall, the combination of ultra-low thickness, high transmittance, low sheet resistance and ability to recover the reflected light by utilizing standard AR coating makes them ideal for utilization in silicon based photovoltaic technologies as a p-type transparent conductor.

Magnetic Properties and Structure of Non-Oriented Electrical Steel Sheets after Different Shape Processing

Czech Academy of Sciences Publication Activity Database

Bulín, Tomáš; Švábenská, Eva; Hapla, Miroslav; Ondrůšek, Č.; Schneeweiss, Oldřich

2017-01-01

Roč. 131, č. 4 (2017), s. 819-821 ISSN 0587-4246. [CSMAG 2016 - Czech and Slovak Conference on Magnetism /16./. Košice, 13.06.2016-17.06.2016] R&D Projects: GA TA ČR(CZ) TE02000232 Institutional support: RVO:68081723 Keywords : Magnetic properties * Silicon steel * Steel sheet Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 0.469, year: 2016

X- and gamma-ray N+PP+ silicon detectors with high radiation resistance

International Nuclear Information System (INIS)

Petris, M.; Ruscu, R.; Moraru, R.; Cimpoca, V.

1998-01-01

We have investigated the use of p-type silicon detectors as starting material for X-and gamma-ray detectors because of several potential benefits it would bring: 1. high purity p-type silicon grown by the float-zone process exhibits better radial dopant uniformity than n-type float-zone silicon; 2. it is free of radiation damage due to the neutron transmutation doping process and behaves better in a radiation field because mainly acceptor like centers are created through the exposure and the bulk material type inversion does not occur as in the n-type silicon. But the p-type silicon, in combination with a passivating layer of silicon dioxide, leads to a more complex detector layout since the positive charge in the oxide causes an inversion in the surface layer under the silicon dioxide. Consequently, it would be expected that N + P diodes have a higher leakage current than P + N ones. All these facts have been demonstrated experimentally. These features set stringent requirements for the technology of p-type silicon detectors. Our work presents two new geometries and an improved technology for p-type high resistivity material to obtain low noise radiation detectors. Test structures were characterized before and after the gamma exposure with a cumulative dose in the range 10 4 - 5 x 10 6 rad ( 60 Co). Results indicate that proposed structures and their technology enable the development of reliable N + PP + silicon detectors. For some samples (0.8 - 12 mm 2 ), extremely low reverse currents were obtained and, in combination with a low noise charge preamplifier, the splitting of 241 Am X-ray lines was possible and also the Mn Kα line (5.9 keV) was extracted from the noise with a 1.9 keV FWHM at the room temperature. An experimental model of a nuclear probe based on these diodes was designed for X-ray detection applications. (authors)

Prediction of power losses in silicon iron sheets under PWM voltage supply

International Nuclear Information System (INIS)

Amar, M.; Kaczmarek, R.; Protat, F.

1994-01-01

The behavior of iron losses in silicon iron steels submitted to a PWM voltage is studied. The influence of modulation parameters (the depth of modulation and the number of eliminated harmonics) is clarified. In particular, the idea of an equivalent alternating pulse voltage that gives the same iron losses as the PWM voltage is established. An estimation formula for iron losses under the PWM voltage is developed based on the loss separation model and the voltage form factor. ((orig.))

Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers.

Science.gov (United States)

Gao, Xuejiao; Guan, Bin; Mesli, Abdelmadjid; Chen, Kaixiang; Dan, Yaping

2018-01-09

It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mass spectrometry indicate that phosphorus is the only electrically active dopant after the molecular monolayer doping. However, during this process, at least 20% of the phosphorus dopants are electrically deactivated. The deep-level transient spectroscopy shows that carbon-related defects are responsible for such deactivation.

Surface effects in segmented silicon sensors

Energy Technology Data Exchange (ETDEWEB)

Kopsalis, Ioannis

2017-05-15

Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO{sub 2} layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO{sub 2} and at the Si-SiO{sub 2} interface. In this thesis the surface radiation damage of the Si-SiO{sub 2} system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO{sub 2} of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO{sub 2}) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO{sub 2} interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface

Surface effects in segmented silicon sensors

International Nuclear Information System (INIS)

Kopsalis, Ioannis

2017-05-01

Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO 2 layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO 2 and at the Si-SiO 2 interface. In this thesis the surface radiation damage of the Si-SiO 2 system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO 2 of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO 2 ) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO 2 interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface radiation damage of silicon sensors.

Effect of Silicon on Intergranular Corrosion Resistance of Ti-stabilized 11 wt% Cr Ferritic Stainless Steels

International Nuclear Information System (INIS)

Hyun, Youngmin; Kim, Heesan

2013-01-01

Ti-stabilized 11 wt% Cr ferritic stainless steels (FSSs) for automotive exhaust systems have been experienced intergranular corrosion (IC) in some heat-affected zone (HAZ). The effects of sensitizing heat-treatment and silicon on IC were studied. Time-Temperature-Sensitization (TTS) curves showed that sensitization to IC was observed at the steels heat-treated at the temperature lower than 650 .deg. C and that silicon improved IC resistance. The sensitization was explained by chromium depletion theory, where chromium is depleted by precipitation of chromium carbide during sensitizing heat-treatment. It was confirmed with the results from the analysis of precipitates as well as the thermodynamical prediction of stable phases. In addition, the role of silicon on IC was explained with the stabilization of grain boundary. In other words, silicon promoted the formation of the grain boundaries with low energy where precipitation was suppressed and consequently, the formation of Cr-depleted zone was retarded. The effect of silicon on the formation of grain boundaries with low energy was proved by the analysis of coincidence site lattice (CSL) grain boundary, which is a typical grain boundary with low energy

Effect of Silicon on Intergranular Corrosion Resistance of Ti-stabilized 11 wt% Cr Ferritic Stainless Steels

Energy Technology Data Exchange (ETDEWEB)

Hyun, Youngmin; Kim, Heesan [Hongik Univ., Sejong (Korea, Republic of)

2013-06-15

Ti-stabilized 11 wt% Cr ferritic stainless steels (FSSs) for automotive exhaust systems have been experienced intergranular corrosion (IC) in some heat-affected zone (HAZ). The effects of sensitizing heat-treatment and silicon on IC were studied. Time-Temperature-Sensitization (TTS) curves showed that sensitization to IC was observed at the steels heat-treated at the temperature lower than 650 .deg. C and that silicon improved IC resistance. The sensitization was explained by chromium depletion theory, where chromium is depleted by precipitation of chromium carbide during sensitizing heat-treatment. It was confirmed with the results from the analysis of precipitates as well as the thermodynamical prediction of stable phases. In addition, the role of silicon on IC was explained with the stabilization of grain boundary. In other words, silicon promoted the formation of the grain boundaries with low energy where precipitation was suppressed and consequently, the formation of Cr-depleted zone was retarded. The effect of silicon on the formation of grain boundaries with low energy was proved by the analysis of coincidence site lattice (CSL) grain boundary, which is a typical grain boundary with low energy.

Decontamination sheet

International Nuclear Information System (INIS)

Hirose, Emiko; Kanesaki, Ken.

1995-01-01

The decontamination sheet of the present invention is formed by applying an adhesive on one surface of a polymer sheet and releasably appending a plurality of curing sheets. In addition, perforated lines are formed on the sheet, and a decontaminating agent is incorporated in the adhesive. This can reduce the number of curing operation steps when a plurality steps of operations for radiation decontamination equipments are performed, and further, the amount of wastes of the cured sheets, and operator's exposure are reduced, as well as an efficiency of the curing operation can be improved, and propagation of contamination can be prevented. (T.M.)

Geomagnetic activity effects on plasma sheet energy conversion

Directory of Open Access Journals (Sweden)

M. Hamrin

2010-10-01

Full Text Available In this article we use three years (2001, 2002, and 2004 of Cluster plasma sheet data to investigate what happens to localized energy conversion regions (ECRs in the plasma sheet during times of high magnetospheric activity. By examining variations in the power density, E·J, where E is the electric field and J is the current density obtained by Cluster, we have studied the influence on Concentrated Load Regions (CLRs and Concentrated Generator Regions (CGRs from variations in the geomagnetic disturbance level as expressed by the Kp, the AE, and the Dst indices. We find that the ECR occurrence frequency increases during higher magnetospheric activities, and that the ECRs become stronger. This is true both for CLRs and for CGRs, and the localized energy conversion therefore concerns energy conversion in both directions between the particles and the fields in the plasma sheet. A higher geomagnetic activity hence increases the general level of energy conversion in the plasma sheet. Moreover, we have shown that CLRs live longer during magnetically disturbed times, hence converting more electromagnetic energy. The CGR lifetime, on the other hand, seems to be unaffected by the geomagnetic activity level. The evidence for increased energy conversion during geomagnetically disturbed times is most clear for Kp and for AE, but there are also some indications that energy conversion increases during large negative Dst. This is consistent with the plasma sheet magnetically mapping to the auroral zone, and therefore being more tightly coupled to auroral activities and variations in the AE and Kp indices, than to variations in the ring current region as described by the Dst index.

Electrochemical depth profiling of multilayer metallic structures: An aluminum brazing sheet

International Nuclear Information System (INIS)

Afshar, F. Norouzi; Ambat, R.; Kwakernaak, C.; Wit, J.H.W. de; Mol, J.M.C.; Terryn, H.

2012-01-01

Highlights: ► Localized electrochemical cell and glow discharge optical emission spectrometry were used. ► An electrochemical depth profile of an aluminum brazing sheet was obtained. ► The electrochemical responses were correlated to the microstructural features. - Abstract: Combinatory localized electrochemical cell and glow discharge optical emission spectrometry (GDOES) measurements were performed to obtain a thorough in depth electrochemical characterization of an aluminum brazing sheet. By defining electrochemical criteria i.e. breakdown potential, corrosion potential, cathodic and anodic reactivities, and tracking their changes as a function of depth, the evolution of electrochemical responses through out the material thickness were analyzed and correlated to the corresponding microstructural features. Polarization curves in 1 wt% NaCl solution at pH 2.8 were obtained at different depths from the surface using controlled sputtering in a glow discharge optical emission spectrometer as a sample preparation technique. The anodic and cathodic reactivity of the top surface areas were significantly higher than that of the bulk, thus indicating these areas to be more susceptible to localized attack. Consistent with this, optical microscopy and scanning electron microscope analysis revealed a relatively high density of fine intermetallic and silicon particles at these areas. The corrosion mechanism of the top layers was identified to be intergranular and pitting corrosion, while lower sensitivity to these localized attacks were detected toward the brazing sheet core. The results highlight the successful application of the electrochemical depth profiling approach in prediction of the corrosion behavior of the aluminum brazing sheet and the importance of the electrochemical activity of the outer 10 μm in controlling the corrosion performance of the aluminum brazing sheet.

Texture and structure of VT-19 alloy thin sheets and their welded joints

International Nuclear Information System (INIS)

Ehgiz, I.V.; Babarehko, A.A.; Khorev, M.A.

1986-01-01

The phase content and texture of VT-19 alloys in all zones of welded joints (weld, a heat affected zone a base metal) after different heat treatments and the effect of the latter on mechanical properties of the welded joint are studied. It is characteristic of a 2.5 mm sheet of the VT-19 alloy rolled in the β → α phase transformation temperature range the development of β-phase plane deformation textures with (001), (112), (111) orientations in the rolling plane that compose 56% of the β-phase material volume. In this case a texture of univariant phase transformation of the above β-phase components { 1120 } - { 1122 } - { 1124 }, as well as that of α-phase plane deformation } 1014 } - { 1015 } are formed in the α-phase. Hardening with subsequent ageing of the rolled sheet leads to increasing the fraction of textured material in the β-phase up to 95% with expanding the volume with the (111) orientation, but as a whole the β-phase texture type remains the same. The α-phase texture type corresponds to the univariant β → α phase transformation, the material having the α-phase texture accounts for 70%. In the weld zone the and axes with orientation spreading to 20 deg are the β-phase crystallization axes in the trans verse direction. The textured material accounts for ∼ 70%. The same texture is observed along the normal to the sheet plane. The α-phase texture after hardening and ageing corresponds to the univariant phase transformation of the above-mentionedβ-phase orientations, the material volume with the α-phase texture is ∼80%

Cohesive zone model for direct silicon wafer bonding

Science.gov (United States)

Kubair, D. V.; Spearing, S. M.

2007-05-01

Direct silicon wafer bonding and decohesion are simulated using a spectral scheme in conjunction with a rate-dependent cohesive model. The cohesive model is derived assuming the presence of a thin continuum liquid layer at the interface. Cohesive tractions due to the presence of a liquid meniscus always tend to reduce the separation distance between the wafers, thereby opposing debonding, while assisting the bonding process. In the absence of the rate-dependence effects the energy needed to bond a pair of wafers is equal to that needed to separate them. When rate-dependence is considered in the cohesive law, the experimentally observed asymmetry in the energetics can be explained. The derived cohesive model has the potential to form a bridge between experiments and a multiscale-modelling approach to understand the mechanics of wafer bonding.

Ultrathin Silicon Sheet in the Management of Unilateral Post-traumatic Temporo-Mandibuar Joint Ankylosis in Children: A Good Alternative to Conventional Techniques.

Science.gov (United States)

Aggarwal, Sushil Kumar; Ankur, Bhatnagar; Jain, R K

2015-09-01

We have described a new technique of using ultra-thin silicon sheet (0.2 mm) between two transected bony ends for temporo-mandibular joint (TMJ) ankylosis in children with advantages of short operative time, minimal foreign material insertion and faster recovery time post-operatively which makes our technique a good alternative to conventional techniques. Our study is a non-randomized prospective study conducted on 10 children aged between 4 and 15 years who presented to our tertiary care institute with severe trismus after traumatic injury and were willing to undergo this new technique. The main outcome measure taken into consideration was difference between pre-operative, intra-operative (on table) and post-operative mouth opening (minimum 2 years follow-up). The pre-operative mouth opening in our cases varied from 1 to 5 mm. The intra-operative mouth opening achieved ranged from 2.8 to 3.2 cm. The mouth opening was about more than 2.7 cm in all our cases at 2 years of follow-up. Our technique is a good alternative to conventional techniques used for TMJ ankylosis in children but few more randomized controlled trials are required to assess its effectiveness in comparison to conventional techniques and for universal adoption of this technique.

The behavior of silicon and boron in the surface of corroded nuclear waste glasses: an EFTEM study

International Nuclear Information System (INIS)

Buck, E. C.; Smith, K. L.; Blackford, M. G.

1999-01-01

Using electron energy-loss filtered transmission electron microscopy (EFTEM), we have observed the formation of silicon-rich zones on the corroded surface of a West Valley (WV6) glass. This layer is approximately 100-200 nm thick and is directly underneath a precipitated smectite clay layer. Under conventional (C)TEM illumination, this layer is invisible; indeed, more commonly used analytical techniques, such as x-ray energy dispersive spectroscopy (EDS), have failed to describe fully the localized changes in the boron and silicon contents across this region. Similar silicon-rich and boron-depleted zones were not found on corroded Savannah River Laboratory (SRL) borosilicate glasses, including SRL-EA and SRL-51, although they possessed similar-looking clay layers. This study demonstrates a new tool for examining the corroded surfaces of materials

Modeling the Fracture of Ice Sheets on Parallel Computers

Energy Technology Data Exchange (ETDEWEB)

Waisman, Haim [Columbia Univ., New York, NY (United States); Tuminaro, Ray [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2013-10-10

The objective of this project was to investigate the complex fracture of ice and understand its role within larger ice sheet simulations and global climate change. This objective was achieved by developing novel physics based models for ice, novel numerical tools to enable the modeling of the physics and by collaboration with the ice community experts. At the present time, ice fracture is not explicitly considered within ice sheet models due in part to large computational costs associated with the accurate modeling of this complex phenomena. However, fracture not only plays an extremely important role in regional behavior but also influences ice dynamics over much larger zones in ways that are currently not well understood. To this end, our research findings through this project offers significant advancement to the field and closes a large gap of knowledge in understanding and modeling the fracture of ice sheets in the polar regions. Thus, we believe that our objective has been achieved and our research accomplishments are significant. This is corroborated through a set of published papers, posters and presentations at technical conferences in the field. In particular significant progress has been made in the mechanics of ice, fracture of ice sheets and ice shelves in polar regions and sophisticated numerical methods that enable the solution of the physics in an efficient way.

Lithium - An impurity of interest in radiation effects of silicon.

Science.gov (United States)

Naber, J. A.; Horiye, H.; Passenheim, B. C.

1971-01-01

Study of the introduction and annealing of defects produced in lithium-diffused float-zone n-type silicon by 30-MeV electrons and fission neutrons. The introduction rate of recombination centers produced by electron irradiation is dependent on lithium concentration and for neutron irradiation is independent of lithium concentration. The introduction rate of Si-B1 centers also depends on the lithium concentration. The annealing of electron- and neutron-produced recombination centers, Si-B1 centers, and Si-G7 centers in lithium-diffused silicon occurs at much lower temperatures than in nondiffused material.

Development of Novel Front Contract Pastes for Crystalline Silicon Solar Cells

Energy Technology Data Exchange (ETDEWEB)

Duty, C.; Jellison, D. G.E. P.; Joshi, P.

2012-04-05

In order to improve the efficiencies of silicon solar cells, paste to silicon contact formation mechanisms must be more thoroughly understood as a function of paste chemistry, wafer properties and firing conditions. Ferro Corporation has been involved in paste development for over 30 years and has extensive expertise in glass and paste formulations. This project has focused on the characterization of the interface between the top contact material (silver paste) and the underlying silicon wafer. It is believed that the interface between the front contact silver and the silicon wafer plays a dominant role in the electrical performance of the solar cell. Development of an improved front contact microstructure depends on the paste chemistry, paste interaction with the SiNx, and silicon (“Si”) substrate, silicon sheet resistivity, and the firing profile. Typical front contact ink contains silver metal powders and flakes, glass powder and other inorganic additives suspended in an organic medium of resin and solvent. During fast firing cycles glass melts, wets, corrodes the SiNx layer, and then interacts with underlying Si. Glass chemistry is also a critical factor in the development of an optimum front contact microstructure. Over the course of this project, several fundamental characteristics of the Ag/Si interface were documented, including a higher-than-expected distribution of voids along the interface, which could significantly impact electrical conductivity. Several techniques were also investigated for the interfacial analysis, including STEM, EDS, FIB, EBSD, and ellipsometry.

Simulating a Dynamic Antarctic Ice Sheet in the Early to Middle Miocene

Science.gov (United States)

Gasson, E.; DeConto, R.; Pollard, D.; Levy, R. H.

2015-12-01

There are a variety of sources of geological data that suggest major variations in the volume and extent of the Antarctic ice sheet during the early to middle Miocene. Simulating such variability using coupled climate-ice sheet models is problematic due to a strong hysteresis effect caused by height-mass balance feedback and albedo feedback. This results in limited retreat of the ice sheet once it has reached the continental size, as likely occurred prior to the Miocene. Proxy records suggest a relatively narrow range of atmospheric CO2 during the early to middle Miocene, which exacerbates this problem. We use a new climate forcing which accounts for ice sheet-climate feedbacks through an asynchronous GCM-RCM coupling, which is able to better resolve the narrow Antarctic ablation zone in warm climate simulations. When combined with recently suggested mechanisms for retreat into subglacial basins due to ice shelf hydrofracture and ice cliff failure, we are able to simulate large-scale variability of the Antarctic ice sheet in the Miocene. This variability is equivalent to a seawater oxygen isotope signal of ~0.5 ‰, or a sea level equivalent change of ~35 m, for a range of atmospheric CO2 between 280 - 500 ppm.

The split-cross-bridge resistor for measuring the sheet resistance, linewidth, and line spacing of conducting layers

Science.gov (United States)

Buehler, M. G.; Hershey, C. W.

1986-01-01

A new test structure was developed for evaluating the line spacing between conductors on the same layer using an electrical measurement technique. This compact structure can also be used to measure the sheet resistance, linewidth, and line pitch of the conducting layer. Using an integrated-circuit fabrication process, this structure was fabricated in diffused polycrystalline silicon and metal layers and measured optically and electrically. For the techniques used, the optical measurements were typically one-quarter micron greater than the electrical measurements. Most electrically measured line pitch values were within 2 percent of the designed value. A small difference between the measured and designed line pitch is used to validate sheet resistance, linewidth, and line spacing values.

Silicon Sheet Growth Development for the Large Area Sheet Task of the Low Cost Solar Array Project. Heat Exchanger Method - Ingot Casting Fixed Abrasive Method - Multi-Wire Slicing

Science.gov (United States)

Schmid, F.; Khattak, C. P.

1978-01-01

Solar cells fabricated from HEM cast silicon yielded up to 15% conversion efficiencies. This was achieved in spite of using unpurified graphite parts in the HEM furnace and without optimization of material or cell processing parameters. Molybdenum retainers prevented SiC formation and reduced carbon content by 50%. The oxygen content of vacuum cast HEM silicon is lower than typical Czochralski grown silicon. Impregnation of 45 micrometers diamonds into 7.5 micrometers copper sheath showed distortion of the copper layer. However, 12.5 micrometers and 15 micrometers copper sheath can be impregnated with 45 micrometers diamonds to a high concentration. Electroless nickel plating of wires impregnated only in the cutting edge showed nickel concentration around the diamonds. This has the possibility of reducing kerf. The high speed slicer fabricated can achieve higher speed and longer stroke with vibration isolation.

Electronic structures of ultra-thin silicon carbides deposited on graphite

International Nuclear Information System (INIS)

Baba, Y.; Sekiguchi, T.; Shimoyama, I.; Nath, Krishna G.

2004-01-01

Electronic structures of ultra-thin silicon carbide films have been investigated by X-ray photoelectron spectroscopy (XPS) and Si K-edge X-ray absorption near edge structure (XANES) using linearly polarized synchrotron soft X-rays. Silicon carbide films were deposited on the surface of highly oriented pyrolytic graphite (HOPG) by ion beam deposition method. Tetramethylsilane (Si(CH 3 ) 4 ) was used as a discharge gas. The XPS and XANES features for the thick layers were similar to those for the bulk SiC. For sub-monolayered films, the Si 1s binding energy in XPS was higher by 2.5 eV than that for bulk SiC. This suggests the existence of low-dimensional SiC x where the silicon atoms are more positively charged than those in bulk SiC. After annealing the sub-monolayered film at 850 deg. C, a new peak appeared around 1840 eV in the XANES spectrum. The energy of this new peak was lower than those for any other silicon compounds. The low-energy feature of the XANES peak suggests the existence of π*-like orbitals around the silicon atom. On the basis of the polarization dependencies of the XANES spectra, it was revealed that the direction of the π*-like orbitals are nearly perpendicular to the surface. We conclude that sub-monolayered SiC x film exhibits flat-lying structure of which configuration is similar to a single sheet of graphite

Laser beam welding and friction stir welding of 6013-T6 aluminium alloy sheet

International Nuclear Information System (INIS)

Braun, R.; Dalle Donne, C.; Staniek, G.

2000-01-01

Butt welds of 1.6 mm thick 6013-T6 sheet were produced using laser beam welding and friction stir welding processes. Employing the former joining technique, filler powders of the alloys Al-5%Mg and Al-12%Si were used. Microstructure, hardness profiles, tensile properties and the corrosion behaviour of the welds in the as-welded condition were investigated. The hardness in the weld zone was lower compared to that of the base material in the peak-aged temper. Hardness minima were measured in the fusion zone and in the thermomechanically affected zone for laser beam welded and friction stir welded joints, respectively. Metallographic and fractographic examinations revealed pores in the fusion zone of the laser beam welds. Porosity was higher in welds made using the filler alloy Al-5%Mg than using the filler metal Al-12%Si. Transmission electron microscopy indicated that the β '' (Mg 2 Si) hardening precipitates were dissolved in the weld zone due to the heat input of the joining processes. Joint efficiencies achieved for laser beam welds depended upon the filler powders, being about 60 and 80% using the alloys Al-5%Mg and Al-12%Si, respectively. Strength of the friction stir weld approached over 80% of the ultimate tensile strength of the 6013-T6 base material. Fracture occurred in the region of hardness minima unless defects in the weld zone led to premature failure. The heat input during welding did not cause a degradation of the corrosion behaviour of the welds, as found in continuous immersion tests in an aqueous chloride-peroxide solution. In contrast to the 6013-T6 parent material, the weld zone was not sensitive to intergranular corrosion. Alternate immersion tests in 3.5% NaCl solution indicated high stress corrosion cracking resistance of the joints. For laser beam welded sheet, the weld zone of alternately immersed specimens suffered severe degradation by pitting and intergranular corrosion, which may be associated with galvanic coupling of filler metal and

Groundwater flow modelling under ice sheet conditions in Greenland (phase II)

International Nuclear Information System (INIS)

Jaquet, Olivier; Namar, Rabah; Siegel, Pascal; Jansson, Peter

2012-11-01

Within the framework of the GAP project, this second phase of geosphere modelling has enabled the development of an improved regional model that has led to a better representation of groundwater flow conditions likely to occur under ice sheet conditions. New data in relation to talik geometry and elevation, as well as to deformation zones were integrated in the geosphere model. In addition, more realistic hydraulic properties were considered for geosphere modelling; they were taken from the Laxemar site in Sweden. The geological medium with conductive deformation zones was modelled as a 3D continuum with stochastically hydraulic properties. Surface and basal glacial meltwater rates provided by a dynamic ice sheet model were assimilated into the groundwater flow model using mixed boundary conditions. The groundwater flow system is considered to be governed by infiltration of glacial meltwater in heterogeneous faulted crystalline rocks in the presence of permafrost and taliks. The characterisation of the permafrost-depth distribution was achieved using a coupled description of flow and heat transfer under steady state conditions. Using glaciological concepts and satellite data, an improved stochastic model was developed for the description at regional scale for the subglacial permafrost distribution in correlation with ice velocity and bed elevation data. Finally, the production of glacial meltwater by the ice sheet was traced for the determination of its depth and lateral extent. The major improvements are related to the type and handling of the subglacial boundary conditions. The use of meltwater rates provided by an ice sheet model applied as input to a mixed boundary condition enables to produce a more plausible flow field in the Eastern part of the domain, in comparison to previous modelling results (Jaquet et al. 2010). In addition, the integration of all potential taliks within the modelled domain provides a better characterisation of the likely groundwater

Groundwater flow modelling under ice sheet conditions in Greenland (phase II)

Energy Technology Data Exchange (ETDEWEB)

Jaquet, Olivier; Namar, Rabah; Siegel, Pascal [In2Earth Modelling Ltd, Lausanne (Switzerland); Jansson, Peter [Dept. of Physical Geography and Quaternary Geology, Stockholm Univ., Stockholm (Sweden)

2012-11-15

Within the framework of the GAP project, this second phase of geosphere modelling has enabled the development of an improved regional model that has led to a better representation of groundwater flow conditions likely to occur under ice sheet conditions. New data in relation to talik geometry and elevation, as well as to deformation zones were integrated in the geosphere model. In addition, more realistic hydraulic properties were considered for geosphere modelling; they were taken from the Laxemar site in Sweden. The geological medium with conductive deformation zones was modelled as a 3D continuum with stochastically hydraulic properties. Surface and basal glacial meltwater rates provided by a dynamic ice sheet model were assimilated into the groundwater flow model using mixed boundary conditions. The groundwater flow system is considered to be governed by infiltration of glacial meltwater in heterogeneous faulted crystalline rocks in the presence of permafrost and taliks. The characterisation of the permafrost-depth distribution was achieved using a coupled description of flow and heat transfer under steady state conditions. Using glaciological concepts and satellite data, an improved stochastic model was developed for the description at regional scale for the subglacial permafrost distribution in correlation with ice velocity and bed elevation data. Finally, the production of glacial meltwater by the ice sheet was traced for the determination of its depth and lateral extent. The major improvements are related to the type and handling of the subglacial boundary conditions. The use of meltwater rates provided by an ice sheet model applied as input to a mixed boundary condition enables to produce a more plausible flow field in the Eastern part of the domain, in comparison to previous modelling results (Jaquet et al. 2010). In addition, the integration of all potential taliks within the modelled domain provides a better characterisation of the likely groundwater

Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal silicon

International Nuclear Information System (INIS)

Jung, Y. J.; Kim, W. K.; Jung, J. H.

2014-01-01

The highest-concentration impurity in a single-crystal silicon ingot is oxygen, which infiltrates the ingot during growth stage. This oxygen adversely affects the wafer is quality. This study was aimed at finding an optimal design for the Czochralski (Cz) process to enable high-quality and low cost (by reducing power consumption) wafer production by controlling the oxygen concentration in the silicon ingots. In the Cz process, the characteristics of silicon ingots during crystallization are greatly influenced by the design and the configuration of the hot zone, and by crystallization rate. In order to identify process conditions for obtaining an optimal oxygen concentration of 11 - 13 ppma (required for industrial-grade ingots), designed two shield shapes for the hot zone. Furthermore, oxygen concentrations corresponding to these two shapes were compared by evaluating each shape at five different production speeds. In addition, simulations were performed to identify the optimal shield design for industrial applications.

Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal silicon

Energy Technology Data Exchange (ETDEWEB)

Jung, Y. J.; Kim, W. K.; Jung, J. H. [Yeungnam University, Gyeongsan (Korea, Republic of)

2014-08-15

The highest-concentration impurity in a single-crystal silicon ingot is oxygen, which infiltrates the ingot during growth stage. This oxygen adversely affects the wafer is quality. This study was aimed at finding an optimal design for the Czochralski (Cz) process to enable high-quality and low cost (by reducing power consumption) wafer production by controlling the oxygen concentration in the silicon ingots. In the Cz process, the characteristics of silicon ingots during crystallization are greatly influenced by the design and the configuration of the hot zone, and by crystallization rate. In order to identify process conditions for obtaining an optimal oxygen concentration of 11 - 13 ppma (required for industrial-grade ingots), designed two shield shapes for the hot zone. Furthermore, oxygen concentrations corresponding to these two shapes were compared by evaluating each shape at five different production speeds. In addition, simulations were performed to identify the optimal shield design for industrial applications.

A comprehensive study of the electrically conducting water based CuO and Al2O3 nanoparticles over coupled nanofluid-sheet interface

International Nuclear Information System (INIS)

Ahmad, R

2016-01-01

Many studies on nanofluid flow over a permeable/impermeable sheet prescribe the kinematics of the sheet and disregard the sheet’s mechanics. However, the current study is one of the infrequent contributions that anticipate the mechanics of both the electrically conducting nanofluid (a homogeneous mixture of nanoparticles and base fluid) and the sheet. Two types of nanoparticles, alumina and copper, with water as a base fluid over the sheet are considered. With the help of the similarity transformations, the corresponding partial differential equations for the coupled nanofluid-sheet interface are transformed into a system of ordinary differential equations. The simulations are done by using the experimentally verified results from the previous studies for viscosity and thermal conductivity. Self-similar solutions are attained by considering both analytical and numerical techniques. Dual skin friction coefficients are attained with different copper and alumina nanoparticles over both the stretching and viscous sheets. The influence of the Eckert number, magnetic and mass suction/blowing parameters on the dimensionless velocity, temperature, skin friction and heat transfer rates over the nanofluid-sheet interface are presented graphically as well as numerically. The obtained results are of potential benefit for studying nanofluid flow over various soft surfaces such as synthetic plastics, soft silicone sheet and soft synthetic rubber sheet. These surfaces are easily deformed by thermal fluctuations. (paper)

Groundwater flow modelling under ice sheet conditions. Scoping calculations

International Nuclear Information System (INIS)

Jaquet, O.; Namar, R.; Jansson, P.

2010-10-01

The potential impact of long-term climate changes has to be evaluated with respect to repository performance and safety. In particular, glacial periods of advancing and retreating ice sheet and prolonged permafrost conditions are likely to occur over the repository site. The growth and decay of ice sheets and the associated distribution of permafrost will affect the groundwater flow field and its composition. As large changes may take place, the understanding of groundwater flow patterns in connection to glaciations is an important issue for the geological disposal at long term. During a glacial period, the performance of the repository could be weakened by some of the following conditions and associated processes: - Maximum pressure at repository depth (canister failure). - Maximum permafrost depth (canister failure, buffer function). - Concentration of groundwater oxygen (canister corrosion). - Groundwater salinity (buffer stability). - Glacially induced earthquakes (canister failure). Therefore, the GAP project aims at understanding key hydrogeological issues as well as answering specific questions: - Regional groundwater flow system under ice sheet conditions. - Flow and infiltration conditions at the ice sheet bed. - Penetration depth of glacial meltwater into the bedrock. - Water chemical composition at repository depth in presence of glacial effects. - Role of the taliks, located in front of the ice sheet, likely to act as potential discharge zones of deep groundwater flow. - Influence of permafrost distribution on the groundwater flow system in relation to build-up and thawing periods. - Consequences of glacially induced earthquakes on the groundwater flow system. Some answers will be provided by the field data and investigations; the integration of the information and the dynamic characterisation of the key processes will be obtained using numerical modelling. Since most of the data are not yet available, some scoping calculations are performed using the

Groundwater flow modelling under ice sheet conditions. Scoping calculations

Energy Technology Data Exchange (ETDEWEB)

Jaquet, O.; Namar, R. (In2Earth Modelling Ltd (Switzerland)); Jansson, P. (Dept. of Physical Geography and Quaternary Geology, Stockholm Univ., Stockholm (Sweden))

2010-10-15

The potential impact of long-term climate changes has to be evaluated with respect to repository performance and safety. In particular, glacial periods of advancing and retreating ice sheet and prolonged permafrost conditions are likely to occur over the repository site. The growth and decay of ice sheets and the associated distribution of permafrost will affect the groundwater flow field and its composition. As large changes may take place, the understanding of groundwater flow patterns in connection to glaciations is an important issue for the geological disposal at long term. During a glacial period, the performance of the repository could be weakened by some of the following conditions and associated processes: - Maximum pressure at repository depth (canister failure). - Maximum permafrost depth (canister failure, buffer function). - Concentration of groundwater oxygen (canister corrosion). - Groundwater salinity (buffer stability). - Glacially induced earthquakes (canister failure). Therefore, the GAP project aims at understanding key hydrogeological issues as well as answering specific questions: - Regional groundwater flow system under ice sheet conditions. - Flow and infiltration conditions at the ice sheet bed. - Penetration depth of glacial meltwater into the bedrock. - Water chemical composition at repository depth in presence of glacial effects. - Role of the taliks, located in front of the ice sheet, likely to act as potential discharge zones of deep groundwater flow. - Influence of permafrost distribution on the groundwater flow system in relation to build-up and thawing periods. - Consequences of glacially induced earthquakes on the groundwater flow system. Some answers will be provided by the field data and investigations; the integration of the information and the dynamic characterisation of the key processes will be obtained using numerical modelling. Since most of the data are not yet available, some scoping calculations are performed using the

Microstructure and Mechanical Performance of Friction Stir Spot-Welded Aluminum-5754 Sheets

Science.gov (United States)

Pathak, N.; Bandyopadhyay, K.; Sarangi, M.; Panda, Sushanta Kumar

2013-01-01

Friction stir spot welding (FSSW) is a recent trend of joining light-weight sheet metals while fabricating automotive and aerospace body components. For the successful application of this solid-state welding process, it is imperative to have a thorough understanding of the weld microstructure, mechanical performance, and failure mechanism. In the present study, FSSW of aluminum-5754 sheet metal was tried using tools with circular and tapered pin considering different tool rotational speeds, plunge depths, and dwell times. The effects of tool design and process parameters on temperature distribution near the sheet-tool interface, weld microstructure, weld strength, and failure modes were studied. It was found that the peak temperature was higher while welding with a tool having circular pin compared to tapered pin, leading to a bigger dynamic recrystallized stir zone (SZ) with a hook tip bending towards the upper sheet and away from the keyhole. Hence, higher lap shear separation load was observed in the welds made from circular pin compared to those made from tapered pin. Due to influence of size and hardness of SZ on crack propagation, three different failure modes of weld nugget were observed through optical cross-sectional micrograph and SEM fractographs.

Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation

CERN Document Server

Fretwurst, E.; Stahl, J.; Pintilie, I.

2002-01-01

The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon wafers during detector processing (result from CERN-RD48). An updated survey on hadron induced damage is given in the first article. Several improvements are outlined especially with respect to antiannealing problems associated with detector storage during LHC maintenance periods. Open questions are outlined in the final section, among which are a full understanding of differences found between proton and neutron induced damage, process related effects changing the radiation tolerance in addition to the oxygen content and the lack of understanding the changed detector properties on the basis of damage induced point and cluster defects. In addition to float zone silicon, so far entirely used for detector fabrication,Czochralski silicon was also studied and first promising re...

Electron spin resonance signal from a tetra-interstitial defect in silicon

CERN Document Server

Mchedlidze, T

2003-01-01

The Si-B3 electron spin resonance (ESR) signal from agglomerates of self-interstitials was detected for the first time in hydrogen-doped float-zone-grown silicon samples subjected to annealing after electron irradiation. Previously this signal had been detected only in neutron- or proton-irradiated silicon samples. The absence of obscuring ESR peaks for the investigated samples at applied measurement conditions allowed an investigation of the hyperfine structure of the Si-B3 spectra. The analysis supports assignment of a tetra-interstitial defect as the origin of the signal.

Phase transformation during silica cluster impact on crystal silicon substrate studied by molecular dynamics simulation

International Nuclear Information System (INIS)

Chen Ruling; Luo Jianbin; Guo Dan; Lu Xinchun

2008-01-01

The process of a silica cluster impact on a crystal silicon substrate is studied by molecular dynamics simulation. At the impact loading stage, crystal silicon of the impact zone transforms to a locally ordered molten with increasing the local temperature and pressure of the impact zone. And then the transient molten forms amorphous silicon directly as the local temperature and pressure decrease at the impact unloading stage. Moreover, the phase behavior between the locally ordered molten and amorphous silicon exhibits the reversible structural transition. The transient molten contains not only lots of four-fold atom but also many three- and five-fold atoms. And the five-fold atom is similar to the mixture structure of semi-Si-II and semi-bct5-Si. The structure transformation between five- and four-fold atoms is affected by both pressure and temperature. The structure transformation between three- and four-fold atoms is affected mostly by temperature. The direct structure transformation between five- and three-fold atoms is not observed. Finally, these five- and three-fold atoms are also different from the usual five- and three-fold deficient atoms of amorphous silicon. In addition, according to the change of coordination number of atoms the impact process is divided into six stages: elastic, plastic, hysteresis, phase regressive, adhesion and cooling stages

Brazil Geological Basic Survey Program - Espera River - Sheet SF.23-X-B-IV - Minas Gerais State

International Nuclear Information System (INIS)

Raposo, F.O.

1991-01-01

The present report refers to the Rio Espera sheet (SF.23.X-B-IV) systematic geological mapping, on the 1:100.000 scale. The sheet, which covers Zona da Mata region, includes the Southeastern bord of Minas Gerais Metallurgic Zone, SE of Quadrilatero Ferrifero, in the Sao Francisco craton bord, and Mantiqueira province. Since only one doubtful 2,5 thousand million year - Rb/Sr isochron was obtained in the sheet, Archacan and Proterozoic ages have been attributed to the metamorphic rocks by comparison to other ones elsewhere. An analysis of the crustal evolution pattern based on gravimetric survey data, aeromagnetometry and available geochronological data is given in the 6. Chapter, Part II of the text. Major elements oxides and rare-earths were analysed to establish parameters for the rocks environment elucidation. The geochemical survey was carried out with base on pan concentrated and stream sediments distributed throughout the sheet. (author)

Planar silicon sensors for the CMS Tracker upgrade

CERN Document Server

Junkes, Alexandra

2013-01-01

The CMS tracker collaboration has initiated a large material investigation and irradiation campaign to identify the silicon material and design that fulfills all requirements for detectors for the high-luminosity phase of the Large Hadron Collider (HL-LHC).A variety of silicon p-in-n and n-in-p test-sensors made from Float Zone, Deep-Diffused FZ and Magnetic Czochralski materials were manufactured by one single industrial producer, thus guaranteeing similar conditions for the production and design of the test-structures. Properties of different silicon materials and design choices have been systematically studied and compared.The samples have been irradiated with 1 MeV neutrons and protons corresponding to maximal fluences as expected for the positions of detector layers in the future tracker. Irradiations with protons of different energies (23 MeV and 23 GeV) have been performed to evaluate the energy dependence of the defect generation in oxygen rich material. All materials have been characterized before an...

Observation of enhanced infrared absorption in silicon supersaturated with gold by pulsed laser melting of nanometer-thick gold films

Science.gov (United States)

Chow, Philippe K.; Yang, Wenjie; Hudspeth, Quentin; Lim, Shao Qi; Williams, Jim S.; Warrender, Jeffrey M.

2018-04-01

We demonstrate that pulsed laser melting (PLM) of thin 1, 5, and 10 nm-thick vapor-deposited gold layers on silicon enhances its room-temperature sub-band gap infrared absorption, as in the case of ion-implanted and PLM-treated silicon. The former approach offers reduced fabrication complexity and avoids implantation-induced lattice damage compared to ion implantation and pulsed laser melting, while exhibiting comparable optical absorptance. We additionally observed strong broadband absorptance enhancement in PLM samples made using 5- and 10-nm-thick gold layers. Raman spectroscopy and Rutherford backscattering analysis indicate that such an enhancement could be explained by absorption by a metastable, disordered and gold-rich surface layer. The sheet resistance and the diode electrical characteristics further elucidate the role of gold-supersaturation in silicon, revealing the promise for future silicon-based infrared device applications.

Development of an in-plane biaxial test for forming limit curve (FLC) characterization of metallic sheets

International Nuclear Information System (INIS)

Zidane, I; Guines, D; Léotoing, L; Ragneau, E

2010-01-01

The main objective of this work is to propose a new experimental device able to give for a single specimen a good prediction of rheological parameters and formability under static and dynamic conditions (for intermediate strain rates). In this paper, we focus on the characterization of sheet metal forming. The proposed device is a servo-hydraulic testing machine provided with four independent dynamic actuators allowing biaxial tensile tests on cruciform specimens. The formability is evaluated thanks to the classical forming limit diagram (FLD), and one of the difficulties of this study was the design of a dedicated specimen for which the necking phenomenon appears in its central zone. If necking is located in the central zone of the specimen, then the speed ratio between the two axes controls the strain path in this zone and a whole forming limit curve can be covered. Such a specimen is proposed through a numerical and experimental validation procedure. A rigorous procedure for the detection of numerical and experimental forming strains is also presented. Finally, an experimental forming limit curve is determined and validated for an aluminium alloy dedicated to the sheet forming processes (AA5086)

Some studies on mechanical properties and microstructural characterization of automated TIG welding of thin commercially pure titanium sheets

Energy Technology Data Exchange (ETDEWEB)

Karpagaraj, A.; Siva shanmugam, N., E-mail: nsiva@nitt.edu; Sankaranarayanasamy, K.

2015-07-29

Gas Tungsten Arc Welding (GTAW) is a commonly used welding process for welding Titanium materials. Welding of titanium and its alloys poses several intricacies to the designer as they are prone to oxidation phenomenon. To overcome this contamination, a relatively new type of shielding arrangement is experimented. The proposed design and arrangement have been employed for joining commercially pure titanium sheets with variations in the GTAW process parameters namely the welding current and travel speed. Bead on plate (BoP) trials were conducted on thin sheets of 2 mm thickness by varying the process parameters. Subsequently, the macro structure images were captured. Based on these results, the process parameters are chosen for carrying out full penetration butt joints on 1.6 mm and 2 mm thick titanium sheets. The influences of these parameters of GTAW on the microstructure, mechanical properties and surface morphology at the fractured locations of the welded joints are examined. The microstructural properties of base metal, heat affected zone and fusion zone are analyzed through optical microscopy. The welded joints showed an ultimate tensile strength of about 383 MPa with 15.7% elongation. The hardness value at fusion zone and base metal are typically observed to be 191 and 153 HV-0.5, respectively. X-ray diffraction study is conducted to examine the chemical composition in the parent metal and fusion zone of the weld. Fractured surface is examined using Scanning Electron Microscopy which revealed dimple kind of rupture present at the fractured surfaces owing to insufficient or excessive heat with slight impurities that prevents the accomplishment of stronger micro-level weld integrity.

Some studies on mechanical properties and microstructural characterization of automated TIG welding of thin commercially pure titanium sheets

International Nuclear Information System (INIS)

Karpagaraj, A.; Siva shanmugam, N.; Sankaranarayanasamy, K.

2015-01-01

Gas Tungsten Arc Welding (GTAW) is a commonly used welding process for welding Titanium materials. Welding of titanium and its alloys poses several intricacies to the designer as they are prone to oxidation phenomenon. To overcome this contamination, a relatively new type of shielding arrangement is experimented. The proposed design and arrangement have been employed for joining commercially pure titanium sheets with variations in the GTAW process parameters namely the welding current and travel speed. Bead on plate (BoP) trials were conducted on thin sheets of 2 mm thickness by varying the process parameters. Subsequently, the macro structure images were captured. Based on these results, the process parameters are chosen for carrying out full penetration butt joints on 1.6 mm and 2 mm thick titanium sheets. The influences of these parameters of GTAW on the microstructure, mechanical properties and surface morphology at the fractured locations of the welded joints are examined. The microstructural properties of base metal, heat affected zone and fusion zone are analyzed through optical microscopy. The welded joints showed an ultimate tensile strength of about 383 MPa with 15.7% elongation. The hardness value at fusion zone and base metal are typically observed to be 191 and 153 HV-0.5, respectively. X-ray diffraction study is conducted to examine the chemical composition in the parent metal and fusion zone of the weld. Fractured surface is examined using Scanning Electron Microscopy which revealed dimple kind of rupture present at the fractured surfaces owing to insufficient or excessive heat with slight impurities that prevents the accomplishment of stronger micro-level weld integrity

Spatiotemporal Variability of Meltwater Refreezing in Southwest Greenland Ice Sheet Firn

Science.gov (United States)

Rennermalm, A. K.; Hock, R.; Tedesco, M.; Corti, G.; Covi, F.; Miège, C.; Kingslake, J.; Leidman, S. Z.; Munsell, S.

2017-12-01

A substantial fraction of the summer meltwater formed on the surface of the Greenland ice sheet is retained in firn, while the remaining portion runs to the ocean through surface and subsurface channels. Refreezing of meltwater in firn can create impenetrable ice lenses, hence being a crucial process in the redistribution of surface runoff. To quantify the impact of refreezing on runoff and current and future Greenland surface mass balance, a three year National Science Foundation funded project titled "Refreezing in the firn of the Greenland ice sheet: Spatiotemporal variability and implications for ice sheet mass balance" started this past year. Here we present an overview of the project and some initial results from the first field season in May 2017 conducted in proximity of the DYE-2 site in the percolation zone of the Southwest Greenland ice sheet at elevations between 1963 and 2355 m a.s.l.. During this fieldwork two automatic weather stations were deployed, outfitted with surface energy balance sensors and 16 m long thermistor strings, over 300 km of ground penetrating radar data were collected, and five 20-26 m deep firn cores were extracted and analyzed for density and stratigraphy. Winter snow accumulation was measured along the radar tracks. Preliminary work on the firn-core data reveals increasing frequency and thickness of ice lenses at lower ice-sheet elevations, in agreement with other recent work in the area. Data collected within this project will facilitate advances in our understanding of the spatiotemporal variability of firn refreezing and its role in the hydrology and surface mass balance of the Greenland Ice Sheet.

Upgraded metallurgical-grade silicon solar cells with efficiency above 20%

Energy Technology Data Exchange (ETDEWEB)

Zheng, P.; Rougieux, F. E.; Samundsett, C.; Yang, Xinbo; Wan, Yimao; Macdonald, D. [Research School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Terrritory 2601 (Australia); Degoulange, J.; Einhaus, R. [Apollon Solar, 66 Cours Charlemagne, Lyon 69002 (France); Rivat, P. [FerroPem, 517 Avenue de la Boisse, Chambery Cedex 73025 (France)

2016-03-21

We present solar cells fabricated with n-type Czochralski–silicon wafers grown with strongly compensated 100% upgraded metallurgical-grade feedstock, with efficiencies above 20%. The cells have a passivated boron-diffused front surface, and a rear locally phosphorus-diffused structure fabricated using an etch-back process. The local heavy phosphorus diffusion on the rear helps to maintain a high bulk lifetime in the substrates via phosphorus gettering, whilst also reducing recombination under the rear-side metal contacts. The independently measured results yield a peak efficiency of 20.9% for the best upgraded metallurgical-grade silicon cell and 21.9% for a control device made with electronic-grade float-zone silicon. The presence of boron-oxygen related defects in the cells is also investigated, and we confirm that these defects can be partially deactivated permanently by annealing under illumination.

Preparation of copper and silicon/copper powders by a gas ...

Indian Academy of Sciences (India)

Pure and silicon-coated metal copper nano to submicron-sized powders were prepared by gas evaporation and condensation. This powder was synthesized by using an industrial electron accelerator, ELV-6, with Ar as the carrier gas. Vapour from the liquefied metal surface was transferred to the cold zone by the carrier ...

Dense sheet Z-pinches

International Nuclear Information System (INIS)

Tetsu, Miyamoto

1999-01-01

The steady state and quasi-steady processes of infinite- and finite-width sheet z-pinches are studied. The relations corresponding to the Bennett relation and Pease-Braginskii current of cylindrical fiber z-pinches depend on a geometrical factor in the sheet z-pinches. The finite-width sheet z-pinch is approximated by a segment of infinite-width sheet z-pinch, if it is wide enough, and corresponds to a number of (width/thickness) times fiber z-pinch plasmas of the diameter that equals the sheet thickness. If the sheet current equals this number times the fiber current, the plasma created in the sheet z-pinches is as dense as in the fiber z-pinches. The total energy of plasma and magnetic field per unit mass is approximately equal in both pinches. Quasi-static transient processes are different in several aspects from the fiber z-pinch. No radiation collapse occurs in the sheet z-pinch. The stability is improved in the sheet z-pinches. The fusion criterions and the experimental arrangements to produce the sheet z-pinches are also discussed. (author)

A new subdivision of the central Sesia Zone (Aosta Valley, Italy)

Science.gov (United States)

Giuntoli, Francesco; Engi, Martin; Manzotti, Paola; Ballèvre, Michel

2015-04-01

The Sesia Zone in the Western Alps is a continental terrane probably derived from the NW-Adriatic margin and polydeformed at HP conditions during Alpine convergence. Subdivisions of the Sesia Zone classically have been based on the dominant lithotypes: Eclogitic Micaschist Complex, Seconda Zona Diorito-Kinzigitica, and Gneiss Minuti Complex. However, recent work (Regis et al., 2014) on what was considered a single internal unit has revealed that it comprises two or more tectonic slices that experienced substantially different PTDt-evolutions. Therefore, detailed regional petrographic and structural mapping (1:3k to 1:10k) was undertaken and combined with extensive sampling for petrochronological analysis. Results allow us to propose a first tectonic scheme for the Sesia Zone between the Aosta Valley and Val d'Ayas. A set of field criteria was developed and applied, aiming to recognize and delimit the first order tectonic units in this complex structural and metamorphic context. The approach rests on three criteria used in the field: (1) Discontinuously visible metasedimentary trails (mostly carbonates) considered to be monocyclic (Permo-Mesozoic protoliths); (2) mappable high-strain zones; and (3) visible differences in the metamorphic imprint. None of these key features used are sufficient by themselves, but in combination they allow us to propose a new map that delimits main units. We propose an Internal Complex with three eclogitic sheets, each 0.5-3 km thick. Dominant lithotypes include micaschists associated with mafic rocks and minor orthogneiss. The main foliation is of HP, dipping moderately NW. Each of these sheets is bounded by (most likely monometamorphic) sediments, <10-50 m thick. HP-relics (of eclogite facies) are widespread, but a greenschist facies overprint locally is strong close to the tectonic contact to neighbouring sheets. An Intermediate Complex lies NW of the Internal Complex and comprises two thinner, wedge-shaped units termed slices. These

Silicon ribbon technology assessment 1978-1986 - A computer-assisted analysis using PECAN

Science.gov (United States)

Kran, A.

1978-01-01

The paper presents a 1978-1986 economic outlook for silicon ribbon technology based on the capillary action shaping technique. The outlook is presented within the framework of two sets of scenarios, which develop strategy for approaching the 1986 national energy capacity cost objective of $0.50/WE peak. The PECAN (Photovoltaic Energy Conversion Analysis) simulation technique is used to develop a 1986 sheet material price ($50/sq m) which apparently can be attained without further scientific breakthrough.

Low frequency acoustic properties of a honeycomb-silicone rubber acoustic metamaterial

Science.gov (United States)

Gao, Nansha; Hou, Hong

2017-04-01

In order to overcome the influence of mass law on traditional acoustic materials and obtain a lightweight thin-layer structure which can effectively isolate the low frequency noises, a honeycomb-silicone rubber acoustic metamaterial was proposed. Experimental results show that the sound transmission loss (STL) of acoustic metamaterial in this paper is greatly higher than that of monolayer silicone rubber metamaterial. Based on the band structure, modal shapes, as well as the sound transmission simulation, the sound insulation mechanism of the designed honeycomb-silicone rubber structure was analyzed from a new perspective, which had been validated experimentally. Side length of honeycomb structure and thickness of the unit structure would affect STL in damping control zone. Relevant conclusions and design method provide a new concept for engineering noise control.

Environmental Oil Spill Sensitivity Atlas for the South Greenland Coastal Zone

DEFF Research Database (Denmark)

Mosbech, A.; Boertmann, D.; Olsen, B. Ø.

This oil spill sensitivity atlas covers the shoreline and the offshore areas of South Greenland between 56º30' N and 62º N. The coastal zone is divided into 220 areas and the offshore zone into 6 areas. For each area a sensitivity index value is calculated, and each area is subsequently ranked...... are shown on 20 maps-sheets (in scale 1:250,000), which also show the different elements included. These maps also show the selected areas. Coast types logistics and proposed response methods along the coasts are shown on another 20 maps. The sensitivities ofthe offshore zones are depicted on 4 maps, one...

Production and aging of paramagnetic point defects in P-doped floating zone silicon irradiated with high fluence 27 MeV electrons

Science.gov (United States)

Joita, A. C.; Nistor, S. V.

2018-04-01

Enhancing the long term stable performance of silicon detectors used for monitoring the position and flux of the particle beams in high energy physics experiments requires a better knowledge of the nature, stability, and transformation properties of the radiation defects created over the operation time. We report the results of an electron spin resonance investigation in the nature, transformation, and long term stability of the irradiation paramagnetic point defects (IPPDs) produced by high fluence (2 × 1016 cm-2), high energy (27 MeV) electrons in n-type, P-doped standard floating zone silicon. We found out that both freshly irradiated and aged (i.e., stored after irradiation for 3.5 years at 250 K) samples mainly contain negatively charged tetravacancy and pentavacancy defects in the first case and tetravacancy defects in the second one. The fact that such small cluster vacancy defects have not been observed by irradiation with low energy (below 5 MeV) electrons, but were abundantly produced by irradiation with neutrons, strongly suggests the presence of the same mechanism of direct formation of small vacancy clusters by irradiation with neutrons and high energy, high fluence electrons, in agreement with theoretical predictions. Differences in the nature and annealing properties of the IPPDs observed between the 27 MeV electrons freshly irradiated, and irradiated and aged samples were attributed to the presence of a high concentration of divacancies in the freshly irradiated samples, defects which transform during storage at 250 K through diffusion and recombination processes.

Fatigue crack layer propagation in silicon-iron

Science.gov (United States)

Birol, Y.; Welsch, G.; Chudnovsky, A.

1986-01-01

Fatigue crack propagation in metal is almost always accompanied by plastic deformation unless conditions strongly favor brittle fracture. The analysis of the plastic zone is crucial to the understanding of crack propagation behavior as it governs the crack growth kinetics. This research was undertaken to study the fatigue crack propagation in a silicon iron alloy. Kinetic and plasticity aspects of fatigue crack propagation in the alloy were obtained, including the characterization of damage evolution.

Stable anodes for lithium ion batteries made of self-organized mesoporous silicon

International Nuclear Information System (INIS)

Wolter, Sascha J; Köntges, Marc; Brendel, Rolf; Bahnemann, Detlef

2016-01-01

Alloy-forming compounds, such as electrodes for lithium ion batteries, stand out in terms of their theoretical specific charge capacity while still lacking in mechanical stability due to significant volume changes during operation. Herein, we examine the approach of combining low structural dimensions of the active material with built-in expansion volumes and assess their benefit for silicon anodes in lithium ion batteries. Consequently, self-organized mesoporous silicon is prepared as a suitable anode material for lithium ion batteries without any pre-structuring methods. The anodes are made by employing electrochemical etching methods in a scalable process and are characterized by ellipsometry. Thermally evaporated copper is utilized as the current collector. A sheet of freestanding silicon in contact with copper is used as an anode material with a thickness of 3 μm. After an initialization phase, electrochemical characterization reveals an anode stability of more than 160 cycles with a specific charge capacity of 730 mAh/g. The mechanical stability of the anode is examined by taking SEM measurements of the used electrode material. (paper)

Silicon-germanium and platinum silicide nanostructures for silicon based photonics

Science.gov (United States)

Storozhevykh, M. S.; Dubkov, V. P.; Arapkina, L. V.; Chizh, K. V.; Mironov, S. A.; Chapnin, V. A.; Yuryev, V. A.

2017-05-01

This paper reports a study of two types of silicon based nanostructures prospective for applications in photonics. The first ones are Ge/Si(001) structures forming at room temperature and reconstructing after annealing at 600°C. Germanium, being deposited from a molecular beam at room temperature on the Si(001) surface, forms a thin granular film composed of Ge particles with sizes of a few nanometers. A characteristic feature of these films is that they demonstrate signs of the 2 x 1 structure in their RHEED patterns. After short-term annealing at 600°C under the closed system conditions, the granular films reconstruct to heterostructures consisting of a Ge wetting layer and oval clusters of Ge. A mixed type c(4x2) + p(2x2) reconstruction typical to the low-temperature MBE (Tgr Ge. The other type of the studied nanostructures is based on Pt silicides. This class of materials is one of the friendliest to silicon technology. But as silicide film thickness reaches a few nanometers, low resistivity becomes of primary importance. Pt3Si has the lowest sheet resistance among the Pt silicides. However, the development of a process of thin Pt3Si films formation is a challenging task. This paper describes formation of a thin Pt3Si/Pt2Si structures at room temperature on poly-Si films. Special attention is paid upon formation of poly-Si and amorphous Si films on Si3N4 substrates at low temperatures.

Oxygen-related 1-platinum defects in silicon: An electron paramagnetic resonance study

Science.gov (United States)

Juda, U.; Scheerer, O.; Höhne, M.; Riemann, H.; Schilling, H.-J.; Donecker, J.; Gerhardt, A.

1996-09-01

A monoclinic 1-platinum defect recently detected was investigated more thoroughly by electron paramagnetic resonance (EPR). The defect is one of the dominating defects in platinum doped silicon. With a perfect reproducibility it is observed in samples prepared from n-type silicon as well as from p-type silicon, in float zone (FZ) silicon as well as in Czochralski (Cz) silicon. Its concentration varies with the conditions of preparation and nearly reaches that of isolated substitutional platinum in Cz silicon annealed for 2 h at 540 °C after quenching from the temperature of platinum diffusion. Because of its concentration which in Cz-Si exceeds that in FZ-Si the defect is assumed to be oxygen-related though a hyperfine structure with 17O could not be resolved. The defect causes a level close to the valence band. This is concluded from variations of the Fermi level and from a discussion of the spin Hamiltonian parameters. In photo-EPR experiments the defect is coupled to recently detected acceptorlike self-interstitial related defects (SIRDs); their level position turns out to be near-midgap. These defects belong to the lifetime limiting defects in Pt-doped Si.

Temperature detectors on irradiated silicon base

International Nuclear Information System (INIS)

Karimov, M.; Dzhalelov, M.A.; Kurbanov, A.O.

2005-01-01

It is well known, that the most suitable for thermal resistors production is compensated silicon with impurities forming deep lying in forbidden zone, having big negative resistance temperature coefficients (RTC). In the capacity of initial materials for thermal resistors with negative RTC the n-type monocrystalline silicon with specific resistance ∼30 Ω·cm at 300 K is applied. Before the irradiation the phosphorus diffusion is realizing at temperature ∼1000 deg. C for 10 min. Irradiation is putting into practise by WWR-SM reactor fast neutrons within the range (7-10)·10 13 cm -2 . The produced resistors have nominal resistance range (8-20)·10 3 Ω·cm, coefficient of the thermal sensitivity B=4000-6000 deg. C., RTC α 300K =4-6.6 %/grad. It is shown, that offered method allows to obtain same type resistors characteristics on the base of neutron-irradiated material

Radiation hardness of silicon detectors manufactured on wafers from various sources

International Nuclear Information System (INIS)

Dezillie, B.; Bates, S.; Glaser, M.; Lemeilleur, F.; Leroy, C.

1997-01-01

Impurity concentrations in the initial silicon material are expected to play an important role for the radiation hardness of silicon detectors, during their irradiation and for their evolution with time after irradiation. This work reports on the experimental results obtained with detectors manufactured using various float-zone (FZ) and epitaxial-grown material. Preliminary results comparing the changes in leakage current and full depletion voltage of FZ and epitaxial detectors as a function of fluence and of time after 10 14 cm -2 proton irradiation are given. The measurement of charge collection efficiency for epitaxial detectors is also presented. (orig.)

Boron, phosphorus, and gallium determination in silicon crystals doped with gallium

International Nuclear Information System (INIS)

Shklyar, B.L.; Dankovskij, Yu.V.; Trubitsyn, Yu.V.

1989-01-01

When studying IR transmission spectra of silicon doped with gallium in the range of concentrations 1 x 10 14 - 5 x 10 16 cm -3 , the possibility to quantity at low (∼ 20 K) temperatures residual impurities of boron and phosphorus is ascertained. The lower determination limit of boron is 1 x 10 12 cm -3 for a sample of 10 nm thick. The level of the impurities in silicon crystals, grown by the Czochralski method and method of crucible-free zone melting, is measured. Values of boron and phosphorus concentrations prior to and after their alloying with gallium are compared

Finite element simulation of laser cutting process of steel sheet

Directory of Open Access Journals (Sweden)

Meško Jozef

2018-01-01

Full Text Available Lasers are widely used in industry as cutting tools due to ultra flexibility of the cutting conditions, obtaining high quality end product, quick set up, non-mechanical contact between the workpiece and the tool, and small size of the heat affected zone. In the present study, laser gas assisted cutting process is examined. The laser cutting sheet solution is practically always very convenient compared to conventional technologies and brings the greatest cost savings in the manufacturing process.

The observed katabatic flow at the edge of the Greenland ice sheet during GIMEX-91

NARCIS (Netherlands)

Broeke, M.R. van den; Duynkerke, P.G.; Oerlemans, J.

1994-01-01

Observations performed in the melting zone of the Greenland ice sheet and over the adjacent tundra in the summer of 1991 are described. The experimental area is the region near St ndre Stromfjord (67°N, 54°W), which is relatively dry and sunny, resulting in the highest mean temperature in

Towards crack-free ablation cutting of thin glass sheets with picosecond pulsed lasers

Science.gov (United States)

Sun, Mingying; Eppelt, Urs; Hartmann, Claudia; Schulz, Wolfgang; Zhu, Jianqiang; Lin, Zunqi

2017-08-01

We investigated the morphology and mechanism of laser-induced damage in the ablation cutting of thin glass sheets with picosecond laser. Two kinds of damage morphologies observed on the cross-section of the cut channel, are caused by high-density free-electrons and the temperature accumulation, respectively. Notches and micro-cracks can be observed on the top surface of the sample near the cut edge. The surface micro-cracks were related to high energy free-electrons and also the heat-affected zone. Heat-affected-zone and visible-cracks free conditions of glass cutting were achieved by controlling the repetition rate and spatial overlap of laser pulses.

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

A novel ultra-low carbon grain oriented silicon steel produced by twin-roll strip casting

Energy Technology Data Exchange (ETDEWEB)

Wang, Yang, E-mail: wy069024019@163.com [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819 (China); Zhang, Yuan-Xiang; Lu, Xiang; Fang, Feng; Xu, Yun-Bo; Cao, Guang-Ming; Li, Cheng-Gang [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819 (China); Misra, R.D.K. [Laboratory for Excellence in Advanced Steel Research, Department of Metallurgical, Materials and Biomedical Engineering, University of Texas at El Paso, TX 79968 (United States); Wang, Guo-Dong [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819 (China)

2016-12-01

A novel ultra-low carbon grain oriented silicon steel was successfully produced by strip casting and two-stage cold rolling method. The microstructure, texture and precipitate evolution under different first cold rolling reduction were investigated. It was shown that the as-cast strip was mainly composed of equiaxed grains and characterized by very weak Goss texture ({110}<001>) and λ-fiber (<001>//ND). The coarse sulfides of size ~100 nm were precipitated at grain boundaries during strip casting, while nitrides remained in solution in the as-cast strip and the fine AlN particles of size ~20–50 nm, which were used as grain growth inhibitors, were formed in intermediate annealed sheet after first cold rolling. In addition, the suitable Goss nuclei for secondary recrystallization were also formed during intermediate annealing, which is totally different from the conventional process that the Goss nuclei originated in the subsurface layer of the hot rolled sheet. Furthermore, the number of AlN inhibitors and the intensity of desirable Goss texture increased with increasing first cold rolling reduction. After secondary recrystallization annealing, very large grains of size ~10–40 mm were formed and the final magnetic induction, B{sub 8}, was as high as 1.9 T. - Highlights: • A novel chemical composition base on strip casting silicon steel was proposed. • The ultra-low carbon design could shorten the processing routes. • The novel composition and processes were beneficial to obtain more inhibitors. • The magnetic induction of grain oriented silicon steel was significantly improved.

Ultra-shallow junction (USJ) sheet resistance measurements with a non-penetrating four point probe

International Nuclear Information System (INIS)

Benjamin, M.C.; Hillard, R.J.; Borland, J.O.

2005-01-01

An accurate method to measure the four point probe (4PP) sheet resistance (R S ) of ultra shallow junction (USJ) Source-Drain Extension structures is described. The method utilizes Elastic Material probes (EM-probes) to form non-penetrating contacts to the silicon surface [R.J. Hillard, P.Y. Hung, William Chism, C. Win Ye, W.H. Howland, L.C. Tan, C.E. Kalnas, Characterization and Metrology for ULSI Technology, AIP Conference proceedings 683 (2003) 802.]. The probe design is kinematic and the force is controlled to ensure elastic deformation of the probe material. The probe material is such that large direct tunneling currents can flow through the native oxide thereby forming a low impedance contact. Sheet resistance measurements on USJ implanted P+/N structures with Secondary Ion Mass Spectroscopy (SIMS) junction depths less than 15 nm have been measured. The method is demonstrated on implanted USJ structures and found to be consistent with expectations

Selective CVD tungsten on silicon implanted SiO/sub 2/

International Nuclear Information System (INIS)

Hennessy, W.A.; Ghezzo, M.; Wilson, R.H.; Bakhru, H.

1988-01-01

The application range of selective CVD tungsten is extended by its coupling to the ion implantation of insulating materials. This article documents the results of selective CVD tungsten using silicon implanted into SiO/sub 2/ to nucleate the tungsten growth. The role of implant does, energy, and surface preparation in achieving nucleation are described. SEM micrographs are presented to demonstrate the selectivity of this process. Measurements of the tungsten film thickness and sheet resistance are provided for each of the experimental variants corresponding to successful deposition. RBS and XPS analysis are discussed in terms of characterizing the tungsten/oxide interface and to evaluate the role of the silicon implant in the CVD tungsten mechanism. Utilizing this method a desired metallization pattern can be readily defined with lithography and ion implantation, and accurately replicated with a layer of CVD tungsten. This approach avoids problems usually associated with blanket deposition and pattern transfer, which are particularly troublesome for submicron VLSI technology

Study of Pellets and Lumps as Raw Materials in Silicon Production from Quartz and Silicon Carbide

Science.gov (United States)

Dal Martello, E.; Tranell, G.; Gaal, S.; Raaness, O. S.; Tang, K.; Arnberg, L.

2011-10-01

The use of high-purity carbon and quartz raw materials reduces the need for comprehensive refining steps after the silicon has been produced carbothermically in the electric reduction furnace. The current work aims at comparing the reaction mechanisms and kinetics occurring in the inner part of the reduction furnace when pellets or lumpy charge is used, as well as the effect of the raw material mix. Laboratory-scale carbothermic reduction experiments have been carried out in an induction furnace. High-purity silicon carbide and two different high-purity hydrothermal quartzes were charged as raw materials at different molar ratios. The charge was in the form of lumps (size, 2-5 mm) or as powder (size, 10-20 μm), mixed and agglomerated as pellets (size, 1-3 mm) and reacted at 2273 K (2000 °C). The thermal properties of the quartzes were measured also by heating a small piece of quartz in CO atmosphere. The investigated quartzes have different reactivity in reducing atmosphere. The carbothermal reduction experiments show differences in the reacted charge between pellets and lumps as charge material. Solid-gas reactions take place from the inside of the pellets porosity, whereas reactions in lumps occur topochemically. Silicon in pellets is produced mainly in the rim zone. Larger volumes of silicon have been found when using lumpy charge. More SiO is produced when using pellets than for lumpy SiO2 for the same molar ratio and heating conditions. The two SiC polytypes used in the carbothermal reduction experiments as carbon reductants presented different reactivity.

Diffusive Silicon Nanopore Membranes for Hemodialysis Applications.

Directory of Open Access Journals (Sweden)

Steven Kim

Full Text Available Hemodialysis using hollow-fiber membranes provides life-sustaining treatment for nearly 2 million patients worldwide with end stage renal disease (ESRD. However, patients on hemodialysis have worse long-term outcomes compared to kidney transplant or other chronic illnesses. Additionally, the underlying membrane technology of polymer hollow-fiber membranes has not fundamentally changed in over four decades. Therefore, we have proposed a fundamentally different approach using microelectromechanical systems (MEMS fabrication techniques to create thin-flat sheets of silicon-based membranes for implantable or portable hemodialysis applications. The silicon nanopore membranes (SNM have biomimetic slit-pore geometry and uniform pores size distribution that allow for exceptional permeability and selectivity. A quantitative diffusion model identified structural limits to diffusive solute transport and motivated a new microfabrication technique to create SNM with enhanced diffusive transport. We performed in vitro testing and extracorporeal testing in pigs on prototype membranes with an effective surface area of 2.52 cm2 and 2.02 cm2, respectively. The diffusive clearance was a two-fold improvement in with the new microfabrication technique and was consistent with our mathematical model. These results establish the feasibility of using SNM for hemodialysis applications with additional scale-up.

Diffusive Silicon Nanopore Membranes for Hemodialysis Applications

Science.gov (United States)

Kim, Steven; Feinberg, Benjamin; Kant, Rishi; Chui, Benjamin; Goldman, Ken; Park, Jaehyun; Moses, Willieford; Blaha, Charles; Iqbal, Zohora; Chow, Clarence; Wright, Nathan; Fissell, William H.; Zydney, Andrew; Roy, Shuvo

2016-01-01

Hemodialysis using hollow-fiber membranes provides life-sustaining treatment for nearly 2 million patients worldwide with end stage renal disease (ESRD). However, patients on hemodialysis have worse long-term outcomes compared to kidney transplant or other chronic illnesses. Additionally, the underlying membrane technology of polymer hollow-fiber membranes has not fundamentally changed in over four decades. Therefore, we have proposed a fundamentally different approach using microelectromechanical systems (MEMS) fabrication techniques to create thin-flat sheets of silicon-based membranes for implantable or portable hemodialysis applications. The silicon nanopore membranes (SNM) have biomimetic slit-pore geometry and uniform pores size distribution that allow for exceptional permeability and selectivity. A quantitative diffusion model identified structural limits to diffusive solute transport and motivated a new microfabrication technique to create SNM with enhanced diffusive transport. We performed in vitro testing and extracorporeal testing in pigs on prototype membranes with an effective surface area of 2.52 cm2 and 2.02 cm2, respectively. The diffusive clearance was a two-fold improvement in with the new microfabrication technique and was consistent with our mathematical model. These results establish the feasibility of using SNM for hemodialysis applications with additional scale-up. PMID:27438878

Ice sheets as a significant source of highly reactive nanoparticulate iron to the oceans.

Science.gov (United States)

Hawkings, Jon R; Wadham, Jemma L; Tranter, Martyn; Raiswell, Rob; Benning, Liane G; Statham, Peter J; Tedstone, Andrew; Nienow, Peter; Lee, Katherine; Telling, Jon

2014-05-21

The Greenland and Antarctic Ice Sheets cover ~ 10% of global land surface, but are rarely considered as active components of the global iron cycle. The ocean waters around both ice sheets harbour highly productive coastal ecosystems, many of which are iron limited. Measurements of iron concentrations in subglacial runoff from a large Greenland Ice Sheet catchment reveal the potential for globally significant export of labile iron fractions to the near-coastal euphotic zone. We estimate that the flux of bioavailable iron associated with glacial runoff is 0.40-2.54 Tg per year in Greenland and 0.06-0.17 Tg per year in Antarctica. Iron fluxes are dominated by a highly reactive and potentially bioavailable nanoparticulate suspended sediment fraction, similar to that identified in Antarctic icebergs. Estimates of labile iron fluxes in meltwater are comparable with aeolian dust fluxes to the oceans surrounding Greenland and Antarctica, and are similarly expected to increase in a warming climate with enhanced melting.

Electrophysical properties of silicon doped by palladium-103 isotope

International Nuclear Information System (INIS)

Makhkamov, Sh.; Tursunov, N.A.; Sattiev, A.R.; Normurodov, A.B.

2007-01-01

The work is devoted to study of radiation physical processes taking place in Si under nuclear transmutation, Identification and determination of defects microstructure and homogeneities and their distribution, study of interactions of nuclear-transformed phosphorus isotopes with palladium atoms, and its effect on crystal properties. For examination monocrystalline silicon of n- and p-type conductivity with specific resistance from 1 to 40 Ω·cm, dislocation density ∼10 4 cm -2 and oxygen content ∼10 17 cm -3 has been applied. Doping of silicon plates by examined admixture has been carried out by thermal diffusion method within temperature range 1000-1250 deg. C for 0.5- 5 h. Irradiation of doped silicon was conducted by reactor neutron fluences 5·10 18 - 5·10 19 cm -2 with subsequent annealing at 1000 deg. C for 30 min. Efficiency of mixture centers formation in silicon, effect of concentration of formed mixture-defect centers on electro-physical, photoelectric and recombination parameters of doped silicon and revealing of type and state of generated defects have been controlled by electric, volume and X-ray fluorescent methods. On the base of spectroscopic researches it is shown, that in silicon forbidden zone after Pd diffusion in DLTS spectra peaks related with acceptor (E c -0.18 and E v +0.34 eV) levels, and peak responsible for level E v +0.32 eV of donor character caused by palladium impurity. It is shown, that irradiation of doped silicon samples by neutrons lead to nuclear transmutation of 102 Pd, 104 Pd in 103 Pd isotopes in the crystal volume with following electron capture in stable isotope 103m Rh

Neutron irradiation effects on silicon detectors structure, electrical and mechanical characteristics

International Nuclear Information System (INIS)

Rabinovich, E.; Golan, G.; Axelevich, A.; Inberg, A.; Oksman, M.; Rosenwaks, I.; Lubarsky, G.; Seidman, A.; Croitoru, N.; Rancoita, P.G.; Rattaggi, M.

1999-01-01

Neutron irradiation effects on (p-n) and Schottky-junction silicon detectors were studied. It was shown that neutron interactions with monocrystalline silicon create specific types of microstructure defects with morphology differing according to the level of neutron fluences (Φ). The isolated dislocation loops, formed by interstitial atoms were observed in microstructure images for 10 10 ≤ Φ ≤ 10 12 n/cm 2 . A strong change in the dislocation loops density and a cluster formation was observed for Φ ≥ 10 13 n/cm 2 . A drastic silicon damage was found for fluences over 10 14 n/cm 2 . These fluences created zones enriched with all types of dislocations, covering more than 50 % of the total surface area. A mechanical fragility appeared in that fluence range in a form of microcracks. 10 14 n/cm 2 appears to be a critical value of neutron irradiation because of the radiation damage described above and because the characteristics I f -V f of silicon detectors can be differentiated from those obtained at low fluences. (A.C.)

Combined analyses of ion beam synthesized layers in porous silicon

International Nuclear Information System (INIS)

Ramos, A.R.; Silva, M.F. da; Silva, M.R. da; Soares, J.C.; Paszti, F.; Horvath, Z.E.; Vazsonyi, E.; Conde, O.

2001-01-01

High dose ion implantation was used to form polycrystalline silicide films on porous silicon with different native concentrations of light impurities (C and O). Porous silicon layers several μm thick were implanted with 170 KeV Cr + ions to fluences of 3x10'1 7 ions/cm 2 both at room temperature and 450 o C. Similar samples were implanted with 100 keV Co + ions to fluences of 2x10 17 ions/cm 2 at room temperature and 350 o C and 450 o C. The formed silicide compounds were studied by Rutherford backscattering spectrometry, elastic recoil detection, glancing incidence X-ray diffraction, and four point-probe sheet resistance measurements. Selected Co implanted samples were analysed by cross-section transmission electron microscopy. Results show that the light impurities were partially expelled from the forming silicide layer. Combining cross-section transmission electron microscopy with ion beam methods it was possible to show that, in the implanted region, the porous structure collapses and densities during implantation, but the underlying porous silicon remains intact. The layer structure as well as the quality and type of the formed silicide, were found to depend on the original impurity level, implantation temperature, and annealing. (author)

Relation between current sheets and vortex sheets in stationary incompressible MHD

Directory of Open Access Journals (Sweden)

D. H. Nickeler

2012-03-01

Full Text Available Magnetohydrodynamic configurations with strong localized current concentrations and vortices play an important role in the dissipation of energy in space and astrophysical plasma. Within this work we investigate the relation between current sheets and vortex sheets in incompressible, stationary equilibria. For this approach it is helpful that the similar mathematical structure of magnetohydrostatics and stationary incompressible hydrodynamics allows us to transform static equilibria into stationary ones. The main control function for such a transformation is the profile of the Alfvén-Mach number MA, which is always constant along magnetic field lines, but can change from one field line to another. In the case of a global constant MA, vortices and electric current concentrations are parallel. More interesting is the nonlinear case, where MA varies perpendicular to the field lines. This is a typical situation at boundary layers like the magnetopause, heliopause, the solar wind flowing around helmet streamers and at the boundary of solar coronal holes. The corresponding current and vortex sheets show in some cases also an alignment, but not in every case. For special density distributions in 2-D, it is possible to have current but no vortex sheets. In 2-D, vortex sheets of field aligned-flows can also exist without strong current sheets, taking the limit of small Alfvén Mach numbers into account. The current sheet can vanish if the Alfvén Mach number is (almost constant and the density gradient is large across some boundary layer. It should be emphasized that the used theory is not only valid for small Alfvén Mach numbers MA MA ≲ 1. Connection to other theoretical approaches and observations and physical effects in space plasmas are presented. Differences in the various aspects of theoretical investigations of current sheets and vortex sheets are given.

Large diameter lithium compensated silicon detectors for the NASA Advanced Composition Explorer (ACE) mission

International Nuclear Information System (INIS)

Allbritton, G.L.; Andersen, H.; Barnes, A.

1996-01-01

Fabrication of the 100 mm diameter, 3 mm thick lithium-compensated silicon, Si(Li), detectors for the Cosmic Ray Isotope Spectrometer (CRIS) instrument on board the ACE satellite required development of new float-zone silicon growing techniques, new Si(Li) fabrication procedures, and new particle beam testing sequences. These developments are discussed and results are presented that illustrate the advances made in realizing these CRIS Si(Li) detectors, which, when operational in the CRIS detector telescopes, will usher in a new generation of cosmic-ray isotope spectrometers

Effect of silicon contents on the microstructures and mechanical properties of heat affected zones for 9Cr2WVTa steels

Energy Technology Data Exchange (ETDEWEB)

Wang, Jian [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Science, 110016, Shenyang (China); Key Laboratory of Nuclear Materials and Safety Assessment, Institute of Metal Research, Chinese Academy of Science, 110016, Shenyang (China); Lu, Shanping, E-mail: shplu@imr.ac.cn [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Science, 110016, Shenyang (China); Rong, Lijian [Key Laboratory of Nuclear Materials and Safety Assessment, Institute of Metal Research, Chinese Academy of Science, 110016, Shenyang (China); Li, Dianzhong [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Science, 110016, Shenyang (China)

2016-03-15

The weldability of 9Cr2WVTa steels with silicon content varying from 0.30 wt.% to 1.36 wt.% was studied to meet the requirement of Generation-Ⅳ nuclear reactor. Samples of enlarged HAZs were fabricated by a thermal-mechanical simulator based on the simulation and measurement of non-equilibrium phase transformation. The content of δ-ferrite in the HAZs increased with the silicon content and the peak temperature of welding thermal cycle. The impact toughness in the HAZs decreased in different degrees when the δ-ferrite exhibits stripe (lower than 4.82%) or blocky types (higher than 4.82%). Post weld heat treatment (PWHT) has a significant role on improving the toughness. Adding silicon content increased the volume of δ-ferrite and therefore, decreased the tensile strength of the HAZs for 9Cr2WVTa steels. Silicon also as solid solution strengthening element increased the tensile strength. The 9Cr2WVTa steel has good weldability when the silicon content is lower than 0.60 wt.%. - Highlights: • The weldability of 9Cr2WVTa steel with different silicon contents was studied. • The impact toughness decreased in different degrees owing to the δ-ferrite. • PWHT has a significant role on improving the impact toughness. • The 9Cr2WVTa steel with silicon content not exceeding 0.60 wt.% has good weldability.

Silicone infusion tubing instead of Hunter rods for two-stage zone 2 flexor tendon reconstruction in a resource-limited surgical environment.

Science.gov (United States)

Kibadi, K; Moutet, F

2017-10-01

The authors describe their experience using silicone infusion tubing in place of Hunter rods for two-stage zone 2 flexor tendon reconstruction in a resource-limited surgical environment. This case report features a 47-year-old, right-handed man who had no active PIP and DIP joint flexion in four fingers of the right hand 5 months after an injury. During the first repair stage, the A2 and A4 pulleys were reconstructed using an extensor retinaculum graft. An infusion tube was inserted instead of Hunter rods. During the second stage, formation of a digital neo-canal around the infusion tubing was observed. The infusion tubing was removed and replaced with a palmaris longus tendon graft according to the conventional technique. Physiotherapy and rehabilitation followed surgery. At 6 months, very significant progress had been made with complete recovery of PIP and DIP flexion in the four fingers. Copyright © 2017 SFCM. Published by Elsevier Masson SAS. All rights reserved.

An ice sheet model validation framework for the Greenland ice sheet

Science.gov (United States)

Price, Stephen F.; Hoffman, Matthew J.; Bonin, Jennifer A.; Howat, Ian M.; Neumann, Thomas; Saba, Jack; Tezaur, Irina; Guerber, Jeffrey; Chambers, Don P.; Evans, Katherine J.; Kennedy, Joseph H.; Lenaerts, Jan; Lipscomb, William H.; Perego, Mauro; Salinger, Andrew G.; Tuminaro, Raymond S.; van den Broeke, Michiel R.; Nowicki, Sophie M. J.

2017-01-01

We propose a new ice sheet model validation framework - the Cryospheric Model Comparison Tool (CmCt) - that takes advantage of ice sheet altimetry and gravimetry observations collected over the past several decades and is applied here to modeling of the Greenland ice sheet. We use realistic simulations performed with the Community Ice Sheet Model (CISM) along with two idealized, non-dynamic models to demonstrate the framework and its use. Dynamic simulations with CISM are forced from 1991 to 2013, using combinations of reanalysis-based surface mass balance and observations of outlet glacier flux change. We propose and demonstrate qualitative and quantitative metrics for use in evaluating the different model simulations against the observations. We find that the altimetry observations used here are largely ambiguous in terms of their ability to distinguish one simulation from another. Based on basin-scale and whole-ice-sheet-scale metrics, we find that simulations using both idealized conceptual models and dynamic, numerical models provide an equally reasonable representation of the ice sheet surface (mean elevation differences of framework demonstrates that our proposed metrics can distinguish relatively better from relatively worse simulations and that dynamic ice sheet models, when appropriately initialized and forced with the right boundary conditions, demonstrate a predictive skill with respect to observed dynamic changes that have occurred on Greenland over the past few decades. An extensible design will allow for continued use of the CmCt as future altimetry, gravimetry, and other remotely sensed data become available for use in ice sheet model validation.

Effects of Cold Rolling Reduction and Initial Goss Grains Orientation on Texture Evolution and Magnetic Performance of Ultra-thin Grain-oriented Silicon Steel

Directory of Open Access Journals (Sweden)

LIANG Rui-yang

2017-06-01

Full Text Available The ultra-thin grain-oriented silicon steel strips with a thickness of 0.06-0.12mm were produced by one-step-rolling methods with different Goss-orientation of grain-oriented silicon steel sheets. The effect of cold rolling reduction and initial Goss-orientation of samples on texture evolution and magnetic performance of ultra-thin grain-oriented silicon steel strips was studied by EBSD. The result shows that with the increase of cold rolling reduction and decrease of strips thickness, the recrystallization texture is enhanced after annealing.When the cold rolling reduction is 70%,RD//〈001〉 recrystallization texture is the sharpest, and the magnetic performance is the best. The higher degree of Goss orientation in initial sample is, the better magnetic performance of ultra-thin grain-oriented silicon steel.Therefore, for producing an ultra-thin grain-oriented silicon steel with high performance, a material with a concentrated orientation of Goss grains can be used.

Effect of impurities on the growth of {113} interstitial clusters in silicon under electron irradiation

OpenAIRE

Nakai, K.; Hamada, K.; Satoh, Y.; Yoshiie, T.

2011-01-01

The growth and shrinkage of interstitial clusters on {113} planes were investigated in electron irradiated Czochralski grown silicon (Cz-Si), floating-zone silicon (Fz-Si), and impurity-doped Fz-Si (HT-Fz-Si) using a high voltage electron microscope. In Fz-Si, {113} interstitial clusters were formed only near the beam incident surface after a long incubation period, and shrank on subsequent irradiation from the backside of the specimen. In Cz-Si and HT-Fz-Si, {113} interstitial clusters nucle...

Metallisation Technology of Silicon Solar Cells Using the Convectional and Laser Technique

Directory of Open Access Journals (Sweden)

Leszek A. Dobrzanski

2013-07-01

Full Text Available The aim of the paper was to optimize the Selective Laser Sintering (SLS and co-firing in the infrared conveyor furnace parameters in front Screen Printed (SP contacts. The co-firing in the infrared conveyor furnace was carried out at various temperature. The SLS was carried out at various a laser beam, scanning speed of the laser beam and front electrode thickness. The investigations were carried out on monocrystalline silicon wafers. During investigations was applied a silver powder with the grain size of 40 μm. The contacts parameters are obtained according to the Transmission Line Model (TLM measurements. Firstly, this paper shows the comparison between the convectional an unconventional method of manufacturing front contacts of monocrystalline silicon solar cells with the different morphology of silicon for comparative purposes. Secondly, the papers shows technological recommendations for both methods in relation to parameters such as: the optimal paste composition, the morphology of the silicon substrate to produce the front electrode of silicon solar cells, which were selected experimentally in order to produce a uniformly melted structure, well adhering to the substrate, with the low resistance of the front electrode-to-substrate joint zone.

N-type polycrystalline silicon films formed on alumina by aluminium induced crystallization and overdoping

Energy Technology Data Exchange (ETDEWEB)

Tuezuen, O. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg (France)], E-mail: Ozge.Tuzun@iness.c-strasbourg.fr; Slaoui, A. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg (France); Gordon, I. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Focsa, A. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg (France); Ballutaud, D. [GEMaC-UMR 8635 CNRS, 1 place Aristide Briand, F-92195 Meudon (France); Beaucarne, G.; Poortmans, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)

2008-08-30

In this work, we investigated the formation of n-type polysilicon films on alumina substrates by overdoping a p-type silicon layer obtained by aluminium induced crystallization of amorphous silicon (AIC), and subsequent epitaxy. The phosphorus doping of the AIC was carried out by thermal diffusion from a solid source. The structural quality of the n-type Si film was monitored by optical microscope and scanning electron microscope (SEM). The doping efficiency was determined by resistivity measurements and secondary ion mass spectroscopy (SIMS). The sheet resitivity changed from 2700{omega}/sq to 19.6{omega}/sq after thermal diffusion at 950 deg. C for 1h, indicating the overdoping effect. The SIMS profile carried out after the high temperature epitaxy exhibits a two steps phosphorus distribution, indicating the formation of an n{sup +}n structure.

Microstructural investigations of the trimmed edge of DP980 steel sheets

Science.gov (United States)

Bhattacharya, S.; Green, D. E.; Sohmshetty, R.; Alpas, A. T.

2017-10-01

In order to reduce vehicle weight while maintaining crashworthiness, advanced high strength steels (AHSSs), such as DP980, are extensively used for manufacturing automotive body components. During trimming operations, the high tensile strength of DP980 sheets tends to cause damage of the trim edge of D2 die inserts, which result in deterioration of the edge quality. The objective of this work is to study the damage microstructures at the trimmed edge of DP980 steel sheets as a function of the number of trimming cycles. A mechanical press equipped with AISI D2 tool steel inserts was used to continuously trim 1.4 mm thick sheets of DP980 at a rate of 30 strokes/min. Cross-sectional SEM images of the trimmed edges revealed that the sheared edge quality of the DP980 sheets decreased, indicated by an increase in the burr width, with an increase in the number of trims from 40,000 to 70,000. Plastic strains were estimated using the displacements of the martensite plates within plastic flow fields of ferrite. Site-specific cross-sectional TEM samples, excised from the trimmed edge using the in-situ `lift-out' technique by focused ion-beam (FIB)-milling, revealed cracking at the ferrite/martensite interfaces after 70,000 cycles indicating an increase in the depth of deformation zone possibly due to trimming with a chipped and blunted die edge.

Effects of Cl+ and F+ implantation of oxidation-induced stacking faults in silicon

NARCIS (Netherlands)

Xu, J.Y.; Bronsveld, P.M.; Boom, G.; Hosson, J.Th.M. De

1984-01-01

Three implantation effects were investigated in floating-zone-grown silicon: (a) the effect of Cl+ implantation resulting in the shrinkage of oxidation-induced stacking faults; (b) the effect of F+ implantation giving rise to defaulting of the 1/3 [111] Frank dislocations into 1/2[110] perfect

Defect characterization in high-purity silicon after γ- and hadron irradiation

International Nuclear Information System (INIS)

Stahl, J.

2004-07-01

The challenge for silicon particle detectors in future high energy physics experiments caused by extreme radiation fields can only be met by an appropriate defect engineering of the starting material. Appreciable improvements had already been obtained by enriching high resistivity float zone silicon with oxygen as demonstrated by the CERN RD48 collaboration. This thesis will focus on the difference observed after irradiation between standard and oxygenated float zone and detector grade Czochralski silicon. Results obtained with diodes manufactured on epitaxial layers are also included, envisioning effects arising from the possible migration of impurities during the crystal growth from the oxygen rich Czochralski substrate. Deep level transient spectroscopy (DLTS) and thermally stimulated current (TSC) measurements have been performed for defect characterization after γ- and hadron irradiation. Also a new high resolution DLTS technique has been used for the first time to separate defect levels with similar parameters. During the microscopic studies additionally to the well known defects like VO i , V 2 , C i O i or VP, four new radiation induced defects have been discovered and characterized. Two of these defects are closely correlated with the detector performance: A deep acceptor labeled as I-defect, and a bistable donor (BD). The formation of the I-defect is strongly suppressed in oxygen rich materials, while the formation of the BD is suppressed in oxygen lean material. With their properties the I- and the BD-defect are able to explain the different macroscopic behavior of standard and oxygen enriched float zone silicon after γ-irradiation. Furthermore, the BD defect is most probably responsible for the observation that in Cz and Epi diodes space charge sign inversion does not occur even after high fluences of proton irradiation. Additionally the γ-irradiated diodes were annealed at temperatures between 100 C and 350 C. During these studies some new reaction

Chlamydia - CDC Fact Sheet

Science.gov (United States)

... Archive STDs Home Page Bacterial Vaginosis (BV) Chlamydia Gonorrhea Genital Herpes Hepatitis HIV/AIDS & STDs Human Papillomavirus ( ... sheet Pelvic Inflammatory Disease (PID) – CDC fact sheet Gonorrhea – CDC fact sheet STDs Home Page Bacterial Vaginosis ( ...

Characterization of microstructure, texture and magnetic properties in twin-roll casting high silicon non-oriented electrical steel

Energy Technology Data Exchange (ETDEWEB)

Li, Hao-Ze; Liu, Hai-Tao, E-mail: liuht@ral.neu.edu.cn; Liu, Zhen-Yu, E-mail: zyliu@mail.neu.edu.cn; Lu, Hui-Hu; Song, Hong-Yu; Wang, Guo-Dong

2014-02-15

An Fe-6.5 wt.% Si-0.3 wt.% Al as-cast sheet was produced by twin-roll strip casting process, then treated with hot rolling, warm rolling and annealing. A detailed study of the microstructure and texture evolution at different processing stages was carried out by optical microscopy, X-ray diffraction and electron backscattered diffraction analysis. The initial as-cast strip showed strong columnar grains and pronounced < 001 >//ND texture. The hot rolled and warm rolled sheets were characterized by large amounts of shear bands distributed through the thickness together with strong < 110 >//RD texture and weak < 111 >//ND texture. After annealing, detrimental < 111 >//ND texture almost disappeared while beneficial (001)<210 >, (001)<010 >, (115)<5 − 10 1 > and (410) < 001 > recrystallization textures were formed, thus the magnetic induction of the annealed sheet was significantly improved. The recrystallization texture in the present study could be explained by preferred nucleation and grain growth mechanism. - Highlights: • A high silicon as-cast strip with columnar structure was produced. • A thin warm rolled sheet without large edge cracks was obtained. • Microstructure and texture evolution at each stage were investigated. • Beneficial (001)<210 >, (001)<010 >, (410)<001 > recrystallization textures were formed. • The magnetic induction of annealed sheet was significantly improved.

Development of microstructure and texture in strip casting grain oriented silicon steel

Energy Technology Data Exchange (ETDEWEB)

Wang, Yang; Xu, Yun-Bo, E-mail: yunbo_xu@126.com; Zhang, Yuan-Xiang; Fang, Feng; Lu, Xiang; Liu, Hai-Tao; Wang, Guo-Dong

2015-04-01

Grain oriented silicon steel was produced by strip casting and two-stage cold rolling processes. The development of microstructure and texture was investigated by using optical microscopy, X-ray diffraction and electron backscattered diffraction. It is shown that the microstructure and texture evolutions of strip casting grain oriented silicon steel are significantly distinct from those in the conventional processing route. The as-cast strip is composed of coarse solidification grains and characterized by pronounced 〈001〉//ND texture together with very weak Goss texture. The initial coarse microstructure enhances {111} shear bands formation during the first cold rolling and then leads to the homogeneously distributed Goss grains through the thickness of intermediate annealed sheet. After the secondary cold rolling and primary annealing, strong γ fiber texture with a peak at {111}〈112〉 dominates the primary recrystallization texture, which is beneficial to the abnormal growth of Goss grain during the subsequent high temperature annealing. Therefore, the secondary recrystallization of Goss orientation evolves completely after the high temperature annealing and the grain oriented silicon steel with a good magnetic properties (B{sub 8}=1.94 T, P{sub 1.7/50}=1.3 W/kg) can be prepared. - Highlights: • Grain oriented silicon steel was developed by a novel ultra-short process. • Many evenly distributed Goss “seeds” were originated from cold rolled shear bands. • More MnS inhibitors were obtained due to the rapid cooling of strip casing. • The magnetic induction of grain oriented silicon steel was significantly improved.

Characterization of Transition Metal Oxide/Silicon Heterojunctions for Solar Cell Applications

Directory of Open Access Journals (Sweden)

Luis G. Gerling

2015-10-01

Full Text Available During the last decade, transition metal oxides have been actively investigated as hole- and electron-selective materials in organic electronics due to their low-cost processing. In this study, four transition metal oxides (V2O5, MoO3, WO3, and ReO3 with high work functions (>5 eV were thermally evaporated as front p-type contacts in planar n-type crystalline silicon heterojunction solar cells. The concentration of oxygen vacancies in MoO3−x was found to be dependent on film thickness and redox conditions, as determined by X-ray Photoelectron Spectroscopy. Transfer length method measurements of oxide films deposited on glass yielded high sheet resistances (~109 Ω/sq, although lower values (~104 Ω/sq were measured for oxides deposited on silicon, indicating the presence of an inversion (hole rich layer. Of the four oxide/silicon solar cells, ReO3 was found to be unstable upon air exposure, while V2O5 achieved the highest open-circuit voltage (593 mV and conversion efficiency (12.7%, followed by MoO3 (581 mV, 12.6% and WO3 (570 mV, 11.8%. A short-circuit current gain of ~0.5 mA/cm2 was obtained when compared to a reference amorphous silicon contact, as expected from a wider energy bandgap. Overall, these results support the viability of a simplified solar cell design, processed at low temperature and without dopants.

Analysis of groundwater flow beneath ice sheets

Energy Technology Data Exchange (ETDEWEB)

Boulton, G. S.; Zatsepin, S.; Maillot, B. [Univ. of Edinburgh (United Kingdom). Dept. of Geology and Geophysics

2001-03-01

The large-scale pattern of subglacial groundwater flow beneath European ice sheets was analysed in a previous report. It was based on a two-dimensional flowline model. In this report, the analysis is extended to three dimensions by exploring the interactions between groundwater and tunnel flow. A theory is developed which suggests that the large-scale geometry of the hydraulic system beneath an ice sheet is a coupled, self-organising system. In this system the pressure distribution along tunnels is a function of discharge derived from basal meltwater delivered to tunnels by groundwater flow, and the pressure along tunnels itself sets the base pressure which determines the geometry of catchments and flow towards the tunnel. The large-scale geometry of tunnel distribution is a product of the pattern of basal meltwater production and the transmissive properties of the bed. The tunnel discharge from the ice margin of the glacier, its seasonal fluctuation and the sedimentary characteristics of eskers are largely determined by the discharge of surface meltwater which penetrates to the bed in the terminal zone. The theory explains many of the characteristics of esker systems and can account for tunnel valleys. It is concluded that the large-scale hydraulic regime beneath ice sheets is largely a consequence of groundwater/tunnel flow interactions and that it is essential similar to non-glacial hydraulic regimes. Experimental data from an Icelandic glacier, which demonstrates measured relationships between subglacial tunnel flow and groundwater flow during the transition from summer to winter seasons for a modern glacier, and which support the general conclusions of the theory is summarised in an appendix.

Analysis of groundwater flow beneath ice sheets

International Nuclear Information System (INIS)

Boulton, G. S.; Zatsepin, S.; Maillot, B.

2001-03-01

The large-scale pattern of subglacial groundwater flow beneath European ice sheets was analysed in a previous report. It was based on a two-dimensional flowline model. In this report, the analysis is extended to three dimensions by exploring the interactions between groundwater and tunnel flow. A theory is developed which suggests that the large-scale geometry of the hydraulic system beneath an ice sheet is a coupled, self-organising system. In this system the pressure distribution along tunnels is a function of discharge derived from basal meltwater delivered to tunnels by groundwater flow, and the pressure along tunnels itself sets the base pressure which determines the geometry of catchments and flow towards the tunnel. The large-scale geometry of tunnel distribution is a product of the pattern of basal meltwater production and the transmissive properties of the bed. The tunnel discharge from the ice margin of the glacier, its seasonal fluctuation and the sedimentary characteristics of eskers are largely determined by the discharge of surface meltwater which penetrates to the bed in the terminal zone. The theory explains many of the characteristics of esker systems and can account for tunnel valleys. It is concluded that the large-scale hydraulic regime beneath ice sheets is largely a consequence of groundwater/tunnel flow interactions and that it is essential similar to non-glacial hydraulic regimes. Experimental data from an Icelandic glacier, which demonstrates measured relationships between subglacial tunnel flow and groundwater flow during the transition from summer to winter seasons for a modern glacier, and which support the general conclusions of the theory is summarised in an appendix

Frozen cultured sheets of epidermal keratinocytes in reepithelialization and repair of the cornea after photorefractive keratectomy.

Science.gov (United States)

Castro-Muñozledo, Federico; Ozorno-Zarate, Jorge; Naranjo-Tackman, Ramon; Kuri-Harcuch, Walid

2002-09-01

To determine whether frozen cultured sheets of human allogeneic epidermal keratinocytes (CEAK) improved wound repair after experimental corneal ablation by photorefractive keratectomy (PRK). Hospital "Luis Sanchez Bulnes" de la Asociación para Evitar la Ceguera en Mexico, I.A.P, and Department of Cell Biology, CINVESTAV-IPN, Mexico City, Mexico. Transepithelial PRK was performed in the right eye of male albino rabbits to obtain a 112 microm deep and 6.0 mm diameter ablation zone. In 17 eyes, the ablations were covered with frozen CEAK; in 11 eyes, the ablations were covered with a disposable contact lens without the cultured sheets; and in the control group (13 eyes), the ablations were not covered. Subepithelial fibrosis and reepithelialization of the ablated zone were evaluated in serial paraffin-embedded tissue sections from all wounds. Treatment with CEAK reduced fibroblast proliferation and the inflammatory response beneath the ablated zone and produced better organization of the newly formed epithelium by eliminating significant hyperplasia or discontinuities in the periodic acid Shiff-stained basement membrane. It also led to accelerated reepithelialization. The use of frozen CEAK as a biologically active wound dressing improved tissue repair at 1 month in corneas ablated by transepithelial PRK in the male albino rabbit model. Treatment with CEAK could improve the outcome of PRK in humans.

Policrystalline silicon used in microelectronic deposited in the LPCVD.-2: Uniformity and crystallinity

International Nuclear Information System (INIS)

Pastor, G.; Dominguez, C.; Lora-Tamayo, E.; Dominguez, E.

1987-01-01

The present work is a study about the uniformity of the silicon deposition in the LPCVD system starting out from the pure silane. It is concluded that it is necessary to take account of all the parameters involved (pressure, temperature, gas flow, number, position and spacing between wafers). From the point of view of the uniformity, three kinds of depositions are observed: poly uniform zone, poly non-uniform zone and amorphous precipitates zone. In the non-uniform zone the increase of the non-uniformity obeys an exponential low when only one of the parameters of the system changes. However, in the amorphous precipitates zone the non-uniformity tends to a constant value. By drawing the values of pressure (P) and gas flow (C), for a fixed temperature, that separates both the uniform/non-uniform and amorphous/policrystalline zones, the equation P n C m #alpha # K(T) are fulfilled where K is a function of temperature. 10 refs

Laminin-521 Promotes Rat Bone Marrow Mesenchymal Stem Cell Sheet Formation on Light-Induced Cell Sheet Technology

Directory of Open Access Journals (Sweden)

Zhiwei Jiang

2017-01-01

Full Text Available Rat bone marrow mesenchymal stem cell sheets (rBMSC sheets are attractive for cell-based tissue engineering. However, methods of culturing rBMSC sheets are critically limited. In order to obtain intact rBMSC sheets, a light-induced cell sheet method was used in this study. TiO2 nanodot films were coated with (TL or without (TN laminin-521. We investigated the effects of laminin-521 on rBMSCs during cell sheet culturing. The fabricated rBMSC sheets were subsequently assessed to study cell sheet viability, reattachment ability, cell sheet thickness, collagen type I deposition, and multilineage potential. The results showed that laminin-521 could promote the formation of rBMSC sheets with good viability under hyperconfluent conditions. Cell sheet thickness increased from an initial 26.7 ± 1.5 μm (day 5 up to 47.7 ± 3.0 μm (day 10. Moreover, rBMSC sheets maintained their potential of osteogenic, adipogenic, and chondrogenic differentiation. This study provides a new strategy to obtain rBMSC sheets using light-induced cell sheet technology.

Silicone metalization

Energy Technology Data Exchange (ETDEWEB)

Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

2008-12-09

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

Science.gov (United States)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of technologies to manufacture applied type thin film solar cells with new structure and development of high-efficiency hybrid thin film/sheet solar cells); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (oyogata shin kozo usumaku taiyo denchi no seizo gijutsu kaihatsu (kokoritsu hybrid gata usumaku / sheet taiyo denchi no seizo gijutsu kaihatsu))

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

With an objective to develop low-cost and high-efficiency hybrid thin film/sheet solar cells, research and development has been performed. This paper summarizes the achievements in fiscal 1999. The research is related to a hybrid construction, in which the upper cells of amorphous silicon thin film are formed on the lower cells bonded with micro-crystalline silicon thin film relative to a poly-crystalline silicon sheet. In the technology to form the upper cells, a pin-construction using amorphous silicon thin film made by using the plasma CVD process was adopted, whereas an open circuit voltage of 1.45V, a short circuit current of 13.6 mA/cm{sup 2}, and a conversion efficiency of 13.5% were obtained. In the technology to form the substrate for the lower cells, formation of flat silicon thin plate that can be peeled off was identified as a result of adopting the construction in which a graphite substrate is provided on a rotating cooling body of 12-prism type. With regard to the technology to bond and form the lower cells, electrical properties of hetero-bonded cells were discussed, and an open circuit voltage of 0.605V and a conversion efficiency of 14.3% were obtained as a result of enhancing the film quality and optimizing the film thickness. (NEDO)

Infrared defect dynamics—Nitrogen-vacancy complexes in float zone grown silicon introduced by electron irradiation

Science.gov (United States)

Inoue, Naohisa; Kawamura, Yuichi

2018-05-01

The interaction of nitrogen and intrinsic point defects, vacancy (V) and self-interstitial (I), was examined by infrared absorption spectroscopy on the electron irradiated and post-annealed nitrogen doped float zone (FZ) silicon crystal. Various absorption lines were observed, at 551 cm-1 in as-grown samples, at 726 and 778 cm-1 in as-irradiated samples (Ir group), at 689 cm-1 after post-annealing at 400 °C and above (400 °C group), at 762 and 951 cm-1 after annealing at 600 °C (600 °C group), and at 714 cm-1 up to 800 °C (800 °C group). By irradiation, a part of N2 was changed into the Ir group. VN2 is the candidate for the origin of the Ir group. By the post annealing at 400 and 600 °C, a part of N2 and the Ir group were changed into the 400 °C group, to less extent at 600 °C. V2N2 is the candidate for the origin of the 400 °C group. By annealing at 600 °C, most of the Ir group turned into 400 °C and 600 °C groups. By annealing at 800 °C, N2 recovered almost completely, and most other complexes were not observed. Recently, lifetime degradation has been observed in the nitrogen doped FZ Si annealed at between 450 and 800 °C. The N-V interaction in the same temperature range revealed here will help to understand the lifetime degradation mechanism. The behavior of the 689 cm-1 line corresponded well to the lifetime degradation.

CO2 Laser Cutting of Hot Stamping Boron Steel Sheets

Directory of Open Access Journals (Sweden)

Pasquale Russo Spena

2017-10-01

Full Text Available This study investigates the quality of CO2 laser cutting of hot stamping boron steel sheets that are employed in the fabrication of automotive body-in-white. For this purpose, experimental laser cutting tests were conducted on 1.2 mm sheets at varying levels of laser power, cutting speed, and oxygen pressure. The resulting quality of cut edges was evaluated in terms of perpendicularity tolerance, surface irregularity, kerf width, heat affected zone, and dross extension. Experimental tests were based on a L9(34 orthogonal array design, with the effects of the process parameters on the quality responses being determined by means of a statistical analysis of variance (ANOVA. Quadratic mathematical models were developed to determine the relationships between the cutting parameters and the quality responses. Finally, a routine based on an optimization criterion was employed to predict the optimal setting of cutting factors and its effect on the quality responses. A confirmation experiment was conducted to verify the appropriateness of the optimization routine. The results show that all of the examined process parameters have a key role in determining the cut quality of hot stamping boron steel sheets, with cutting speed and their interactions having the most influencing effects. Particularly, interactions can have an opposite behavior for different levels of the process parameters.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.

2015-06-18

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

2015-01-01

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Superfund fact sheet: The remedial program. Fact sheet

International Nuclear Information System (INIS)

1992-09-01

The fact sheet describes what various actions the EPA can take to clean up hazardous wastes sites. Explanations of how the criteria for environmental and public health risk assessment are determined and the role of state and local governments in site remediation are given. The fact sheet is one in a series providing reference information about Superfund issues and is intended for readers with no formal scientific training

The glacial geology and landscape of Strathmore and adjoining offshore zone, with especial reference to 1:10 000 scale Sheet NO76NW

OpenAIRE

Golledge, N.R.; Stoker, M.S.

2004-01-01

This report describes the Bedrock and Superficial Geology of 1:10 000 Sheet NO76NW (Craig of Garvock) within the Strathmore area of eastern Scotland. It forms part of the revision of Montrose 1:50 000 Geological Sheet (57E). Strathmore forms a low vale bounded to the north by the Highland Boundary Fault (HBF), and to the south by the Sidlaw Hills. NO76NW is underlain by a Devonian sedimentary sequence with interdigitating contemporaneous igneous sheets. The northern edge of the field-ma...

Radiation protecting sheet

International Nuclear Information System (INIS)

Makiguchi, Hiroshi.

1989-01-01

As protection sheets used in radioactivity administration areas, a thermoplastic polyurethane composition sheet with a thickness of less 0.5 mm, solid content (ash) of less than 5% and a shore D hardness of less than 60 is used. A composite sheet with thickness of less than 0.5 mm laminated or coated with such a thermoplastic polyurethane composition as a surface layer and the thermoplastic polyurethane composition sheet applied with secondary fabrication are used. This can satisfy all of the required properties, such as draping property, abrasion resistance, high breaking strength, necking resistance, endurance strength, as well as chemical resistance and easy burnability in burning furnace. Further, by forming uneveness on the surface by means of embossing, etc. safety problems such as slippage during operation and walking can be overcome. (T.M.)

Processes controlling silicon isotopic fractionation in a forested tropical watershed: Mule Hole Critical Zone Observatory (Southern India)

Science.gov (United States)

Riotte, Jean; Meunier, Jean-Dominique; Zambardi, Thomas; Audry, Stéphane; Barboni, Doris; Anupama, Krishnamurthy; Prasad, Srinivasan; Chmeleff, Jérôme; Poitrasson, Franck; Sekhar, Muddu; Braun, Jean-Jacques

2018-05-01

Assessing the dynamics of the silica cycle in the critical zone remains challenging, particularly within the soil, where multiple processes are involved. To improve our understanding of this cycle in the Tropics, and more specifically the role played by vegetation, we combined elemental Si mass balance with the δ30Si signatures of the compartments involved in the water-plant-rock interactions of a tropical forested watershed, Mule Hole (Southern India). To accomplish this, we analysed (1) the δ30Si values of present-day litter phytoliths from tree leaves and grass, as well as soil amorphous silica (ASi); (2) the Si isotope fractionation induced by phytolith dissolution; (3) the silicon mass balance inferred from isotopes at the soil-plant scale; and (4) the consistency between water sources and the δ30Si signatures in the ephemeral stream. The δ30Si values of present-day litter phytoliths and soil ASi vary within a narrow range of 1.10-1.40‰ for all samples, but two deep vertisol samples which likely trapped phytoliths from different vegetation growing under more humid conditions, as indicated by pollen analysis. A homogeneous signature of litter is a minimum condition for using δ30Si as a proxy for the litter/phytolith source of Si. However, litter-ash dissolution experiments demonstrate that the incipient dissolution of phytoliths fractionates Si isotopes, with the preferential dissolution of 28Si over 30Si yielding δ30Si values as low as -1.41‰. Values close to the whole-sample signatures, i.e., above 1‰, were recovered in the solution after a few hours of water-ash interaction. At the soil-plant scale, the average δ30Si value of soil-infiltrating solutions is slightly lighter than the average phytolith signature, which suggests phytoliths as the source of soil dissolved Si. The isotopic budget of dissolved Si within the soil layer, which was obtained based on previous elemental fluxes, is imbalanced. Equilibrating the isotopic budget would imply

Structures of sub-monolayered silicon carbide films

International Nuclear Information System (INIS)

Baba, Y.; Sekiguchi, T.; Shimoyama, I.; Nath, Krishna G.

2004-01-01

The electronic and geometrical structures of silicon carbide thin films are presented. The films were deposited on graphite by ion-beam deposition using tetramethylsilane (TMS) as an ion source. In the Si K-edge near-edge X-ray absorption fine structure (NEXAFS) spectra for sub-monolayered film, sharp peaks due to the resonance from Si 1s to π*-like orbitals were observed, suggesting the existence of Si=C double bonds. On the basis of the polarization dependencies of the Si 1s → π* peak intensities, it is elucidated that the direction of the π*-like orbitals is just perpendicular to the surface. We conclude that the sub-monolayered SiC x film has a flat-lying hexagonal structure of which configuration is analogous to the single sheet of graphite

Automobile sheet metal part production with incremental sheet forming

Directory of Open Access Journals (Sweden)

İsmail DURGUN

2016-02-01

Full Text Available Nowadays, effect of global warming is increasing drastically so it leads to increased interest on energy efficiency and sustainable production methods. As a result of adverse conditions, national and international project platforms, OEMs (Original Equipment Manufacturers, SMEs (Small and Mid-size Manufacturers perform many studies or improve existing methodologies in scope of advanced manufacturing techniques. In this study, advanced manufacturing and sustainable production method "Incremental Sheet Metal Forming (ISF" was used for sheet metal forming process. A vehicle fender was manufactured with or without die by using different toolpath strategies and die sets. At the end of the study, Results have been investigated under the influence of method and parameters used.Keywords: Template incremental sheet metal, Metal forming

Method for Forming Fiber Reinforced Composite Bodies with Graded Composition and Stress Zones

Science.gov (United States)

Singh, Mrityunjay (Inventor); Levine, Stanley R. (Inventor); Smialek, James A. (Inventor)

1999-01-01

A near-net, complex shaped ceramic fiber reinforced silicon carbide based composite bodies with graded compositions and stress zones is disclosed. To provide the composite a fiber preform is first fabricated and an interphase is applied by chemical vapor infiltration, sol-gel or polymer processes. This first body is further infiltrated with a polymer mixture containing carbon, and/or silicon carbide, and additional oxide, carbide, or nitride phases forming a second body. One side of the second body is spray coated or infiltrated with slurries containing high thermal expansion and oxidation resistant. crack sealant phases and the other side of this second body is coated with low expansion phase materials to form a third body. This third body consisting of porous carbonaceous matrix surrounding the previously applied interphase materials, is then infiltrated with molten silicon or molten silicon-refractory metal alloys to form a fourth body. The resulting fourth body comprises dense composites consisting of fibers with the desired interphase which are surrounded by silicon carbide and other second phases materials at the outer and inner surfaces comprising material of silicon, germanium, refractory metal suicides, borides, carbides, oxides, and combinations thereof The resulting composite fourth body has different compositional patterns from one side to the other.

Silicon epitaxy on textured double layer porous silicon by LPCVD

International Nuclear Information System (INIS)

Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

2010-01-01

Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

Influence of cold rolling direction on texture, inhibitor and magnetic properties in strip-cast grain-oriented 3% silicon steel

Energy Technology Data Exchange (ETDEWEB)

Fang, F., E-mail: fangfengdbdx@163.com [State Key Laboratory of Rolling Technology and Automation, Northeastern University, Shenyang 110819 (China); Lu, X.; Zhang, Y.X.; Wang, Y.; Jiao, H.T.; Cao, G.M.; Yuan, G.; Xu, Y.B. [State Key Laboratory of Rolling Technology and Automation, Northeastern University, Shenyang 110819 (China); Misra, R.D.K. [Laboratory for Excellence in Advanced Steel Research, Department of Metallurgical, Materials and Biomedical Engineering, University of Texas at El Paso, EL Paso, TX 79968 (United States); Wang, G.D. [State Key Laboratory of Rolling Technology and Automation, Northeastern University, Shenyang 110819 (China)

2017-02-15

An unconventional cold rolling scheme (inclined rolling at 0°, 30°, 45°, 90° during second-stage cold rolling process) was adopted to process grain-oriented silicon steel based on strip casting process. The influences of inclination angles on microstructure, texture, inhibitor and magnetic properties were studied by a combination of EBSD, XRD and TEM. It was found that the α-fiber texture was weakened and γ-fiber was strengthened in cold rolled sheet with increase in inclination angle. The primary recrystallization sheet exhibited more homogeneous microstructure with relatively strong γ-fiber, medium α-fiber texture, weak λ-fiber texture and Goss component at high inclination angles. Fine and homogeneous inhibitors were obtained after primary annealing with increase in inclination angle from 0° to 90° because of more uniform deformation after inclined rolling. The grain-oriented silicon steel experienced completely secondary recrystallization at various inclination angles after final annealing process, with superior magnetic properties at 0° and 90°. Furthermore, Goss nuclei capable of final secondary recrystallization in strip casting process newly formed both in-grain shear bands and grain boundaries region during second-stage cold rolling and subsequent annealing process, which is different from the well-accepted results that Goss texture originated from the subsurface layer of the hot rolled sheet or during intermediate annealing process. In addition, the Goss texture that nucleated in-grain shear bands was weaker but more accurate as compared to that in grain boundaries region. - Highlights: • Inclined cold rolling was adopted to process strip-cast grain-oriented silicon steel. • Influence of inclination angles on texture, inhibitor and magnetic properties was studied. • The initial texture was changed with respect to the inclination angle. • Homogeneous inhibitors were obtained after primary annealing at various inclination angles. �

Property control of graphene aerogels by in situ growth of silicone polymer

Science.gov (United States)

Zhou, Shuai; Zhou, Xiang; Hao, Gazi; Jiang, Wei; Wang, Tianhe

2018-05-01

Modulation of the density (from 3.5 to 64 mg cm-3), hydrophobicity and oil-uptake capability of graphene aerogels in extensive ranges were achieved by reacting (3-Mercaptopropyl)trimethoxysilane (MPS) with graphene oxide solutions under heating. The reaction allowed a characteristic silicone substructure to be formed on graphene and joint the graphene layers firmly together. With the increase of MPS concentrations (≤ca. 0.2 vol%), the nano silicone polymer grown on graphene functioned as a "linker" and "spacer", leading to a substantial decrease of the aerogel density. Because of the formation of silicone polymer and the characteristic nano-micro substructures on the backbones of graphene aerogels, the graphene aerogels exhibited a high hydrophobicity with the water contact angle consistently exceeding 142 degrees. Functionalized graphene aerogels with a density of 3.5 mg cm-3 were conveniently fabricated that displayed an extraordinary oil absorption capacity, 182 times for lubricating oil and 143 times for n-hexane of its own weight. Furthermore, the aerogels maintained their ultra-high absorption capability even after 20 absorption-distillation cycles, due to structural integrity held by the strong interfacial adhesion between graphene sheets and polymer chains of aerogels. This study offers a promising graphene aerogels and also provides a strategy for fabricating extra low dense functional materials.

Nickel Electroless Plating: Adhesion Analysis for Mono-Type Crystalline Silicon Solar Cells.

Science.gov (United States)

Shin, Eun Gu; Rehman, Atteq ur; Lee, Sang Hee; Lee, Soo Hong

2015-10-01

The adhesion of the front electrodes to silicon substrate is the most important parameters to be optimized. Nickel silicide which is formed by sintering process using a silicon substrate improves the mechanical and electrical properties as well as act as diffusion barrier for copper. In this experiment p-type mono-crystalline czochralski (CZ) silicon wafers having resistivity of 1.5 Ω·cm were used to study one step and two step nickel electroless plating process. POCl3 diffusion process was performed to form the emitter with the sheet resistance of 70 ohm/sq. The Six, layer was set down as an antireflection coating (ARC) layer at emitter surface by plasma enhanced chemical vapor deposition (PECVD) process. Laser ablation process was used to open SiNx passivation layer locally for the formation of the front electrodes. Nickel was deposited by electroless plating process by one step and two step nickel electroless deposition process. The two step nickel plating was performed by applying a second nickel deposition step subsequent to the first sintering process. Furthermore, the adhesion analysis for both one step and two steps process was conducted using peel force tester (universal testing machine, H5KT) after depositing Cu contact by light induced plating (LIP).

Geometry of thin liquid sheet flows

Science.gov (United States)

Chubb, Donald L.; Calfo, Frederick D.; Mcconley, Marc W.; Mcmaster, Matthew S.; Afjeh, Abdollah A.

1994-01-01

Incompresible, thin sheet flows have been of research interest for many years. Those studies were mainly concerned with the stability of the flow in a surrounding gas. Squire was the first to carry out a linear, invicid stability analysis of sheet flow in air and compare the results with experiment. Dombrowski and Fraser did an experimental study of the disintegration of sheet flows using several viscous liquids. They also detected the formulation of holes in their sheet flows. Hagerty and Shea carried out an inviscid stability analysis and calculated growth rates with experimental values. They compared their calculated growth rates with experimental values. Taylor studied extensively the stability of thin liquid sheets both theoretically and experimentally. He showed that thin sheets in a vacuum are stable. Brown experimentally investigated thin liquid sheet flows as a method of application of thin films. Clark and Dumbrowski carried out second-order stability analysis for invicid sheet flows. Lin introduced viscosity into the linear stability analysis of thin sheet flows in a vacuum. Mansour and Chigier conducted an experimental study of the breakup of a sheet flow surrounded by high-speed air. Lin et al. did a linear stability analysis that included viscosity and a surrounding gas. Rangel and Sirignano carried out both a linear and nonlinear invisid stability analysis that applies for any density ratio between the sheet liquid and the surrounding gas. Now there is renewed interest in sheet flows because of their possible application as low mass radiating surfaces. The objective of this study is to investigate the fluid dynamics of sheet flows that are of interest for a space radiator system. Analytical expressions that govern the sheet geometry are compared with experimental results. Since a space radiator will operate in a vacuum, the analysis does not include any drag force on the sheet flow.

Production of electronic grade lunar silicon by disproportionation of silicon difluoride

Science.gov (United States)

Agosto, William N.

1993-01-01

Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

Solid-phase crystallization of amorphous silicon on ZnO:Al for thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Becker, C.; Conrad, E.; Dogan, P.; Fenske, F.; Gorka, B.; Haenel, T.; Lee, K.Y.; Rau, B.; Ruske, F.; Weber, T.; Gall, S.; Rech, B. [Helmholtz-Zentrum Berlin fuer Materialien und Energie (formerly Hahn-Meitner-Institut Berlin), Kekulestr. 5, D-12489 Berlin (Germany); Berginski, M.; Huepkes, J. [Institute of Photovoltaics, Forschungszentrum Juelich GmbH, D-52425 Juelich (Germany)

2009-06-15

The suitability of ZnO:Al thin films for polycrystalline silicon (poly-Si) thin-film solar cell fabrication was investigated. The electrical and optical properties of 700 -nm-thick ZnO:Al films on glass were analyzed after typical annealing steps occurring during poly-Si film preparation. If the ZnO:Al layer is covered by a 30 nm thin silicon film, the initial sheet resistance of ZnO:Al drops from 4.2 to 2.2 {omega} after 22 h annealing at 600 C and only slightly increases for a 200 s heat treatment at 900 C. A thin-film solar cell concept consisting of poly-Si films on ZnO:Al coated glass is introduced. First solar cell results will be presented using absorber layers either prepared by solid-phase crystallization (SPC) or by direct deposition at 600 C. (author)

Low cost solar array project. Cell and module formation research area. Process research of non-CZ silicon material

Science.gov (United States)

1983-01-01

Liquid diffusion masks and liquid dopants to replace the more expensive CVD SiO2 mask and gaseous diffusion processes were investigated. Silicon pellets were prepared in the silicon shot tower; and solar cells were fabricated using web grown where the pellets were used as a replenishment material. Verification runs were made using the boron dopant and liquid diffusion mask materials. The average of cells produced in these runs was 13%. The relationship of sheet resistivity, temperature, gas flows, and gas composition for the diffusion of the P-8 liquid phosphorus solution was investigated. Solar cells processed from web grown from Si shot material were evaluated, and results qualified the use of the material produced in the shot tower for web furnace feed stock.

DEVELOPMENT OF CORES FOR MINI MOTORS FROM LAMINATED SHEETS OF ELECTRIC STEEL ABNT (Brazilian Association of Technical Standards 35F 420M WITH THERMAL TREATMENT

Directory of Open Access Journals (Sweden)

Halston Mozetic

2016-06-01

Full Text Available The purposes of this paper were to study the thermal treatment of Fe-Si sheet, as well as the sheet cutting concerning the topology of a mini stepper motor and mini motor simulation using finite element software. The research consisted of the execution of an "Inductive Reheating" thermal treatment of Iron Silicon sheets, NM71-2000/35F 420M with GNO (Grain Non Oriented, and 0.35mm width. The new technique has the benefit of minimizing magnetic losses produced by the cut on the edge of electric sheets. To carry out the process, the system includes a furnace, an induction coil, and a power supply that, when activated in a controlled way, causes relevant changes to the crystalline structure of the material. Related to the cut of the sheets, the topology of a three phase mini stepper motor was considered. The sheets were initially cut using the geometry of the rotor and stator cores. Firstly, a die cutting process was used and later a wire electroerosion cutting process was employed, which provided parts with excellent finishing. Finally, the mini motor was simulated using the finite element software FEMM 4.2 in order to analyze the airgap flow and torque development of the axis end, in comparison to a solid block of the same material (Fe-Si

Fuels planning: science synthesis and integration; environmental consequences fact sheet 03: structure fires in the wildland-urban interface

Science.gov (United States)

Steve Sutherland

2004-01-01

National Fire Protection Association (NFPA) data indicate that wildfires destroyed approximately 9,000 homes between 1985 and 1994 in the United States. The loss of homes to wildfire has had a significant impact on Federal fire policy. This fact sheet discusses the causes of home ignitions in the wildland-urban interface, home ignition zones, how to reduce home...

Silicon spectral response extension through single wall carbon nanotubes in hybrid solar cells

KAUST Repository

Del Gobbo, Silvano; Castrucci, P.; Fedele, S.; Riele, L.; Convertino, A.; Morbidoni, M.; De Nicola, F.; Scarselli, M.; Camilli, L.; De Crescenzi, M.

2013-01-01

Photovoltaic devices based on single wall carbon nanotubes (SWCNTs) and n-silicon multiple heterojunctions have been fabricated by a SWCNT film transferring process. We report on the ability of the carbon nanotubes to extend the Si spectral range towards the near ultraviolet (UV) and the near infrared regions. Semiconducting and about metallic SWCNT networks have been studied as a function of the film sheet resistance, Rsh. Optical absorbance and Raman spectroscopy have been used to assign nanotube chirality and electronic character. This gave us hints of evidence of the participation of the metal nanotubes in the photocurrent generation. Moreover, we provide evidence that the external quantum efficiency spectral range can be modulated as a function of the SWCNT network sheet resistance in a hybrid SWCNT/Si solar cell. This result will be very useful to further design/optimize devices with improved performance in spectral regions generally not covered by conventional Si p-n devices. © 2013 The Royal Society of Chemistry.

Modeling and Design of a New Flexible Graphene-on-Silicon Schottky Junction Solar Cell

Directory of Open Access Journals (Sweden)

Francesco Dell’Olio

2016-10-01

Full Text Available A new graphene-based flexible solar cell with a power conversion efficiency >10% has been designed. The environmental stability and the low complexity of the fabrication process are the two main advantages of the proposed device with respect to other flexible solar cells. The designed solar cell is a graphene/silicon Schottky junction whose performance has been enhanced by a graphene oxide layer deposited on the graphene sheet. The effect of the graphene oxide is to dope the graphene and to act as anti-reflection coating. A silicon dioxide ultrathin layer interposed between the n-Si and the graphene increases the open-circuit voltage of the cell. The solar cell optimization has been achieved through a mathematical model, which has been validated by using experimental data reported in literature. The new flexible photovoltaic device can be integrated in a wide range of microsystems powered by solar energy.

The modelled liquid water balance of the Greenland Ice Sheet

Science.gov (United States)

Steger, Christian R.; Reijmer, Carleen H.; van den Broeke, Michiel R.

2017-11-01

Recent studies indicate that the surface mass balance will dominate the Greenland Ice Sheet's (GrIS) contribution to 21st century sea level rise. Consequently, it is crucial to understand the liquid water balance (LWB) of the ice sheet and its response to increasing surface melt. We therefore analyse a firn simulation conducted with the SNOWPACK model for the GrIS and over the period 1960-2014 with a special focus on the LWB and refreezing. Evaluations of the simulated refreezing climate with GRACE and firn temperature observations indicate a good model-observation agreement. Results of the LWB analysis reveal a spatially uniform increase in surface melt (0.16 m w.e. a-1) during 1990-2014. As a response, refreezing and run-off also indicate positive changes during this period (0.05 and 0.11 m w.e. a-1, respectively), where refreezing increases at only half the rate of run-off, implying that the majority of the additional liquid input runs off the ice sheet. This pattern of refreeze and run-off is spatially variable. For instance, in the south-eastern part of the GrIS, most of the additional liquid input is buffered in the firn layer due to relatively high snowfall rates. Modelled increase in refreezing leads to a decrease in firn air content and to a substantial increase in near-surface firn temperature. On the western side of the ice sheet, modelled firn temperature increases are highest in the lower accumulation zone and are primarily caused by the exceptional melt season of 2012. On the eastern side, simulated firn temperature increases are more gradual and are associated with the migration of firn aquifers to higher elevations.

The effects of incomplete annealing on the temperature dependence of sheet resistance and gage factor in aluminum and phosphorus implanted silicon on sapphire

Science.gov (United States)

Pisciotta, B. P.; Gross, C.

1976-01-01

Partial annealing of damage to the crystal lattice during ion implantation reduces the temperature coefficient of resistivity of ion-implanted silicon, while facilitating controlled doping. Reliance on this method for temperature compensation of the resistivity and strain-gage factor is discussed. Implantation conditions and annealing conditions are detailed. The gage factor and its temperature variation are not drastically affected by crystal damage for some crystal orientations. A model is proposed to account for the effects of electron damage on the temperature dependence of resistivity and on silicon piezoresistance. The results are applicable to the design of silicon-on-sapphire strain gages with high gage factors.

Formation of SiC using low energy CO2 ion implantation in silicon

International Nuclear Information System (INIS)

Sari, A.H.; Ghorbani, S.; Dorranian, D.; Azadfar, P.; Hojabri, A.R.; Ghoranneviss, M.

2008-01-01

Carbon dioxide ions with 29 keV energy were implanted into (4 0 0) high-purity p-type silicon wafers at nearly room temperature and doses in the range between 1 x 10 16 and 3 x 10 18 ions/cm 2 . X-ray diffraction analysis (XRD) was used to characterize the formation of SiC in implanted Si substrate. The formation of SiC and its crystalline structure obtained from above mentioned technique. Topographical changes induced on silicon surface, grains and evaluation of them at different doses observed by atomic force microscopy (AFM). Infrared reflectance (IR) and Raman scattering measurements were used to reconfirm the formation of SiC in implanted Si substrate. The electrical properties of implanted samples measured by four point probe technique. The results show that implantation of carbon dioxide ions directly leads to formation of 15R-SiC. By increasing the implantation dose a significant changes were also observed on roughness and sheet resistivity properties.

Flexible high-κ/Metal gate metal/insulator/metal capacitors on silicon (100) fabric

KAUST Repository

Rojas, Jhonathan Prieto

2013-10-01

Implementation of memory on bendable substrates is an important step toward a complete and fully developed notion of mechanically flexible computational systems. In this paper, we have demonstrated a simple fabrication flow to build metal-insulator-metal capacitors, key components of dynamic random access memory, on a mechanically flexible silicon (100) fabric. We rely on standard microfabrication processes to release a thin sheet of bendable silicon (area: 18 {\\ m cm}2 and thickness: 25 \\\\mu{\\ m m}) in an inexpensive and reliable way. On such platform, we fabricated and characterized the devices showing mechanical robustness (minimum bending radius of 10 mm at an applied strain of 83.33% and nominal strain of 0.125%) and consistent electrical behavior regardless of the applied mechanical stress. Furthermore, and for the first time, we performed a reliability study suggesting no significant difference in performance and showing an improvement in lifetime projections. © 1963-2012 IEEE.

Best Management Practice, Fact Sheet 2. Sheet Flow to Open Space

OpenAIRE

Sample, David; Doumar, Lia

2013-01-01

This publication explains what sheet flow to open space is, where and how it is used, their limitations, routine and nonroutine maintenance, expected costs, and a glossary of terms. This fact sheet is one of a 15-part series on urban stormwater management practices.

Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

Science.gov (United States)

Whitman, Pamela K.; Feke, Donald L.

1986-01-01

The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

Spontaneously-acoustic hypersound long-range stimulation of silicon nitride synthesis in silicon at argon ion irradiation

CERN Document Server

Demidov, E S; Markov, K A; Sdobnyakov, V V

2001-01-01

The work is dedicated to the nature of the average energy ions implantation process effect on the crystal defective system at the distances, exceeding by three-four orders the averagely projected ions run value. It is established that irradiation by the argon ions stimulated the Si sub 3 N sub 4 phase formation in the preliminarily nitrogen-saturated layers at the distances of approximately 600 mu m from the ions deceleration zone. It is supposed that there appear sufficiently effective pulse sources of the hypersonic shock waves in the area of the Ar sup + deceleration zone. These waves are the result of the jump-like origination and grid evolution of the loop-shaped dislocations and argon blisters as well as of the blisters explosion, The evaluations show that the peak pressure in wave due to the synchronized explosion of blisters in the nitrogen-saturated area on the reverse side of the silicon plate 600 mu m thick may exceed 10 sup 8 Pa and cause experimentally observed changes

Large-size, high-uniformity, random silver nanowire networks as transparent electrodes for crystalline silicon wafer solar cells.

Science.gov (United States)

Xie, Shouyi; Ouyang, Zi; Jia, Baohua; Gu, Min

2013-05-06

Metal nanowire networks are emerging as next generation transparent electrodes for photovoltaic devices. We demonstrate the application of random silver nanowire networks as the top electrode on crystalline silicon wafer solar cells. The dependence of transmittance and sheet resistance on the surface coverage is measured. Superior optical and electrical properties are observed due to the large-size, highly-uniform nature of these networks. When applying the nanowire networks on the solar cells with an optimized two-step annealing process, we achieved as large as 19% enhancement on the energy conversion efficiency. The detailed analysis reveals that the enhancement is mainly caused by the improved electrical properties of the solar cells due to the silver nanowire networks. Our result reveals that this technology is a promising alternative transparent electrode technology for crystalline silicon wafer solar cells.

On the determining role of network structure titania in silicone against bacterial colonization: Mechanism and disruption of biofilm

International Nuclear Information System (INIS)

Depan, D.; Misra, R.D.K.

2014-01-01

Silicone-based biomedical devices are prone to microbial adhesion, which is the primary cause of concern in the functioning of the artificial device. Silicone exhibiting long-term and effective antibacterial ability is highly desirable to prevent implant related infections. In this regard, nanophase titania was incorporated in silicone as an integral part of the silicone network structure through cross-link mechanism, with the objective to reduce bacterial adhesion to a minimum. The bacterial adhesion was studied using crystal violet assay, while the mechanism of inhibition of biofilm formation was studied via electron microscopy. The incorporation of nanophase titania in silicone dramatically reduced the viability of Staphylococcus aureus (S. aureus) and the capability to adhere on the surface of hybrid silicone by ∼ 93% in relation to stand alone silicone. The conclusion of dramatic reduction in the viability of S. aureus is corroborated by different experimental approaches including biofilm inhibition assay, zone of inhibition, and through a novel experiment that involved incubation of biofilm with titania nanoparticles. It is proposed that the mechanism of disruption of bacterial film in the presence of titania involves puncturing of the bacterial cell membrane. - Highlights: • Network structure titania in silicone imparts antimicrobial activity. • Ability to microbial adhesion is significantly reduced. • Antimicrobial mechanism involves rupture of biofilm

Carbon sheet pumping

International Nuclear Information System (INIS)

Ohyabu, N.; Sagara, A.; Kawamura, T.; Motojima, O.; Ono, T.

1993-07-01

A new hydrogen pumping scheme has been proposed which controls recycling of the particles for significant improvement of the energy confinement in toroidal magnetic fusion devices. In this scheme, a part of the vacuum vessel surface near the divertor is covered with carbon sheets of a large surface area. Before discharge initiation, the sheets are baked up to 700 ∼ 1000degC to remove the previously trapped hydrogen atoms. After being cooled down to below ∼ 200degC, the unsaturated carbon sheets trap high energy charge exchange hydrogen atoms effectively during a discharge and overall pumping efficiency can be as high as ∼ 50 %. (author)

FDTD modeling of thin impedance sheets

Science.gov (United States)

Luebbers, Raymond J.; Kunz, Karl S.

1991-01-01

Thin sheets of resistive or dielectric material are commonly encountered in radar cross section calculations. Analysis of such sheets is simplified by using sheet impedances. In this paper it is shown that sheet impedances can be modeled easily and accurately using Finite Difference Time Domain (FDTD) methods.

Remaining Sites Verification Package for the 100-D-2 Lead Sheeting Waste Site. Attachment to Waste Site Reclassification Form 2007-030

International Nuclear Information System (INIS)

Dittmer, L.M.

2008-01-01

The 100-D-2 Lead Sheeting waste site was located approximately 50 m southwest of the 185-D Building and approximately 16 m north of the east/west oriented road. The site consisted of a lead sheet covering a concrete pad. In accordance with this evaluation, the verification sampling results support a reclassification of this site to Interim Closed Out. The results of verification sampling show that residual contaminant concentrations do not preclude any future uses and allow for unrestricted use of shallow zone soils. The results also demonstrate that residual contaminant concentrations are protective of groundwater and the Columbia River

Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

International Nuclear Information System (INIS)

Tsukamoto, K.; Akasaka, Y.; Horie, K.

1977-01-01

Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

Porous silicon: silicon quantum dots for photonic applications

International Nuclear Information System (INIS)

Pavesi, L.; Guardini, R.

1996-01-01

Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

New method for determining avalanche breakdown voltage of silicon photomultipliers

International Nuclear Information System (INIS)

Chirikov-Zorin, I.

2017-01-01

The avalanche breakdown and Geiger mode of the silicon p-n junction is considered. A precise physically motivated method is proposed for determining the avalanche breakdown voltage of silicon photomultipliers (SiPM). The method is based on measuring the dependence of the relative photon detection efficiency (PDE rel ) on the bias voltage when one type of carriers (electron or hole) is injected into the avalanche multiplication zone of the p-n junction. The injection of electrons or holes from the base region of the SiPM semiconductor structure is performed using short-wave or long-wave light. At a low overvoltage (1-2 V) the detection efficiency is linearly dependent on the bias voltage; therefore, extrapolation to zero PDE rel value determines the SiPM avalanche breakdown voltage with an accuracy within a few millivolts. [ru

Monolithic amorphous silicon modules on continuous polymer substrate

Energy Technology Data Exchange (ETDEWEB)

Grimmer, D.P. (Iowa Thin Film Technologies, Inc., Ames, IA (United States))

1992-03-01

This report examines manufacturing monolithic amorphous silicon modules on a continuous polymer substrate. Module production costs can be reduced by increasing module performance, expanding production, and improving and modifying production processes. Material costs can be reduced by developing processes that use a 1-mil polyimide substrate and multilayers of low-cost material for the front encapsulant. Research to speed up a-Si and ZnO deposition rates is needed to improve throughputs. To keep throughput rates compatible with depositions, multibeam fiber optic delivery systems for laser scribing can be used. However, mechanical scribing systems promise even higher throughputs. Tandem cells and production experience can increase device efficiency and stability. Two alternative manufacturing processes are described: (1) wet etching and sheet handling and (2) wet etching and roll-to-roll fabrication.

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

Science.gov (United States)

Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

2016-12-28

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

Analysis about diamond tool wear in nano-metric cutting of single crystal silicon using molecular dynamics method

Science.gov (United States)

Wang, Zhiguo; Liang, Yingchun; Chen, Mingjun; Tong, Zhen; Chen, Jiaxuan

2010-10-01

Tool wear not only changes its geometry accuracy and integrity, but also decrease machining precision and surface integrity of workpiece that affect using performance and service life of workpiece in ultra-precision machining. Scholars made a lot of experimental researches and stimulant analyses, but there is a great difference on the wear mechanism, especially on the nano-scale wear mechanism. In this paper, the three-dimensional simulation model is built to simulate nano-metric cutting of a single crystal silicon with a non-rigid right-angle diamond tool with 0 rake angle and 0 clearance angle by the molecular dynamics (MD) simulation approach, which is used to investigate the diamond tool wear during the nano-metric cutting process. A Tersoff potential is employed for the interaction between carbon-carbon atoms, silicon-silicon atoms and carbon-silicon atoms. The tool gets the high alternating shear stress, the tool wear firstly presents at the cutting edge where intension is low. At the corner the tool is splitted along the {1 1 1} crystal plane, which forms the tipping. The wear at the flank face is the structure transformation of diamond that the diamond structure transforms into the sheet graphite structure. Owing to the tool wear the cutting force increases.

Partially melted zone cracking in AA6061 welds

International Nuclear Information System (INIS)

Prasad Rao, K.; Ramanaiah, N.; Viswanathan, N.

2008-01-01

Partially melted zone (PMZ) cracking susceptibility in AA6061 alloy was studied. Role of prior thermal history, gas tungsten arc welding techniques such as continuous current (CC) and pulsed current (PC) and use of different fillers (AA4043 and AA5356) were studied. Role of different grain refiners such as scandium, zirconium and Tibor in the above fillers was studied. Varestraint test was used to study the PMZ cracking susceptibility. Metallurgical analysis was done to corroborate the results. PMZ cracking was severe in T6 temper than in T4 irrespective of filler material. PMZ cracking susceptibility was more with AA5356 than in AA4043. It was less with pulsed current GTAW. PMZ cracking susceptibility was reduced with addition of grain refiners. Out of all, lowest PMZ cracking susceptibility was observed with 0.5%Sc addition to fusion zone through AA4043 filler and PC technique. The concentrations of magnesium and silicon were reduced at the PMZ grain boundaries with grain refiner additions to fusion zone through AA5356 or AA4043

Partially melted zone cracking in AA6061 welds

Energy Technology Data Exchange (ETDEWEB)

Prasad Rao, K. [Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai (India)], E-mail: kpr@iitm.ac.in; Ramanaiah, N. [Sri Kalahasteeswara Institute of Technology, Srikalahasti (India); Viswanathan, N. [Defence Research and Development Laboratory, Hyderabad (India)

2008-07-01

Partially melted zone (PMZ) cracking susceptibility in AA6061 alloy was studied. Role of prior thermal history, gas tungsten arc welding techniques such as continuous current (CC) and pulsed current (PC) and use of different fillers (AA4043 and AA5356) were studied. Role of different grain refiners such as scandium, zirconium and Tibor in the above fillers was studied. Varestraint test was used to study the PMZ cracking susceptibility. Metallurgical analysis was done to corroborate the results. PMZ cracking was severe in T6 temper than in T4 irrespective of filler material. PMZ cracking susceptibility was more with AA5356 than in AA4043. It was less with pulsed current GTAW. PMZ cracking susceptibility was reduced with addition of grain refiners. Out of all, lowest PMZ cracking susceptibility was observed with 0.5%Sc addition to fusion zone through AA4043 filler and PC technique. The concentrations of magnesium and silicon were reduced at the PMZ grain boundaries with grain refiner additions to fusion zone through AA5356 or AA4043.

Transmission electron microscope study of neutron irradiation-induced defects in silicon

International Nuclear Information System (INIS)

Oshima, Ryuichiro; Kawano, Tetsuya; Fujimoto, Ryoji

1994-01-01

Commercial Czochralski-grown silicon (Cz-Si) and float-zone silicon (Fz-Si) wafers were irradiated with fission neutrons at various fluences from 10 19 to 10 22 n/cm 2 at temperatures ranging from 473 K to 1043 K. The irradiation induced defect structures were examined by transmission electron microscopy and ultra high voltage electron microscopy, which were compared with Marlowe code computer simulation results. It was concluded that the vacancy-type damage structure formed at 473 K were initiated from collapse of vacancy-rich regions of cascades, while interstitial type defect clusters formed by irradiation above 673 K were associated with interstitial oxygen atoms and free interstitials which diffused out of the cascades. Complex defect structures were identified to consist of {113} and {111} planar faults by the parallel beam illumination diffraction analysis. (author)

Time-resolved photoluminescence for evaluating laser-induced damage during dielectric stack ablation in silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Parola, Stéphanie [Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA Lyon, Villeurbanne, F-69621 (France); Blanc-Pélissier, Danièle, E-mail: daniele.blanc@insa-lyon.fr [Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA Lyon, Villeurbanne, F-69621 (France); Barbos, Corina; Le Coz, Marine [Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA Lyon, Villeurbanne, F-69621 (France); Poulain, Gilles [TOTAL MS—New Energies, R& D Division, La Défense (France); Lemiti, Mustapha [Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA Lyon, Villeurbanne, F-69621 (France)

2016-06-30

Highlights: • Ablation of Al{sub 2}O{sub 3} and Al{sub 2}O{sub 3}/SiN{sub x} on Si substrates was performed with a nanosecond UV laser. • Ablation thresholds were found in good agreement with COMSOL simulation, around 0.85 and 0.95 J cm{sup −2} for Al{sub 2}O{sub 3} and Al{sub 2}O{sub 3}/SiN{sub X}, respectively. • Laser-induced damage was evaluated at room temperature by time-resolved photoluminescence decay with a single photon counting detector. • Minority carrier lifetime in silicon as a function of the ablation fluence was derived from the photoluminescence decay and related to the thickness of the heat affected zone. • Quantitative measurements of laser-induced damage can be used to evaluate laser ablation of dielectrics in photovoltaics. - Abstract: Selective laser ablation of dielectric layers on crystalline silicon wafers was investigated for solar cell fabrication. Laser processing was performed on Al{sub 2}O{sub 3}, and bi-layers Al{sub 2}O{sub 3}/SiN{sub X}:H with a nanosecond UV laser at various energy densities ranging from 0.4 to 2 J cm{sup −2}. Ablation threshold was correlated to the simulated temperature at the interface between the dielectric coatings and the silicon substrate. Laser-induced damage to the silicon substrate was evaluated by time-resolved photoluminescence. The minority carrier lifetime deduced from time-resolved photoluminescence was related to the depth of the heat affected zone in the substrate.

Plasma dynamics in current sheets

International Nuclear Information System (INIS)

Bogdanov, S.Yu.; Drejden, G.V.; Kirij, N.P.; AN SSSR, Leningrad

1992-01-01

Plasma dynamics in successive stages of current sheet evolution is investigated on the base of analysis of time-spatial variations of electron density and electrodynamic force fields. Current sheet formation is realized in a two-dimensional magnetic field with zero line under the action of relatively small initial disturbances (linear regimes). It is established that in the limits of the formed sheet is concentrated dense (N e ∼= 10 16 cm -3 ) (T i ≥ 100 eV, bar-Z i ≥ 2) hot pressure of which is balanced by the magnetic action of electrodynamic forces is carried out both plasma compression in the sheet limits and the acceleration along the sheet surface from a middle to narrow side edges

Growth of plutons by incremental emplacement of sheets in crystal-rich host: Evidence from Miocene intrusions of the Colorado River region, Nevada, USA

Science.gov (United States)

Miller, C.F.; Furbish, D.J.; Walker, B.A.; Claiborne, L.L.; Koteas, G.C.; Bleick, H.A.; Miller, J.S.

2011-01-01

Growing evidence supports the notion that plutons are constructed incrementally, commonly over long periods of time, yet field evidence for the multiple injections that seem to be required is commonly sparse or absent. Timescales of up to several million years, among other arguments, indicate that the dominant volume does not remain largely molten, yet if growing plutons are constructed from rapidly solidifying increments it is unlikely that intrusive contacts would escape notice. A model wherein magma increments are emplaced into melt-bearing but crystal-rich host, rather than either solid or crystal-poor material, provides a plausible explanation for this apparent conundrum. A partially solidified intrusion undoubtedly comprises zones with contrasting melt fraction and therefore strength. Depending on whether these zones behave elastically or ductilely in response to dike emplacement, intruding magma may spread to form sheets by either of two mechanisms. If the melt-bearing host is elastic on the relevant timescale, magma spreads rather than continuing to propagate upward, where it encounters a zone of higher rigidity (higher crystal fraction). Similarly, if the dike at first ascends through rigid, melt-poor material and then encounters a zone that is weak enough (poor enough in crystals) to respond ductilely, the ascending material will also spread because the dike tip ceases to propagate as in rigid material. We propose that ascending magma is thus in essence trapped, by either mechanism, within relatively crystal-poor zones. Contacts will commonly be obscure from the start because the contrast between intruding material (crystal-poorer magma) and host (crystal-richer material) is subtle, and they may be obscured even further by subsequent destabilization of the crystal-melt framework. Field evidence and zircon zoning stratigraphy in plutons of the Colorado River region of southern Nevada support the hypothesis that emplacement of magma replenishments into a

Influence of the silicon concentration on the optical and electrical properties of reactively sputtered Zr-Si-N nanocomposite coatings

International Nuclear Information System (INIS)

Pilloud, D.; Pierson, J.F.; Pichon, L.

2006-01-01

Zr-Si-N films were deposited on silicon and X38CrMoV5 steel substrates by sputtering composite Zr-Si targets in reactive Ar-N 2 mixture. The silicon concentration in the deposited films was adjusted by the variation of the number of Si chips located on the target erosion zone. As a function of the silicon content, the films exhibited the following structures: insertion of Si into the ZrN lattice, nanocomposite (nc-ZrN/a-SiN x ) and an amorphous-like structure. Addition of silicon into ZrN-based coatings induced a lost of the golden aspect due to the decrease of the metallic behaviour. This result was confirmed by ellipsometric measurements. The films refractive index increased with the silicon concentration. On the other hand, a continuous decrease of the extinction coefficient was noticed. The effect of the silicon content on the optical properties of Zr-Si-N films was discussed as a function of the films structure and the occurrence of new optical absorptions due to the silicon chemical bonds. Finally, the evolution of the films electrical resistivity was discussed in connection to the films structure changes

AZO-Ag-AZO transparent electrode for amorphous silicon solar cells

International Nuclear Information System (INIS)

Theuring, Martin; Vehse, Martin; Maydell, Karsten von; Agert, Carsten

2014-01-01

Metal-based transparent electrodes can be fabricated at low temperatures, which is crucial for various substrate materials and solar cells. In this work, an oxide-metal-oxide (OMO) transparent electrode based on aluminum zinc oxide (AZO) and silver is compared to AZO layers, fabricated at different temperatures and indium tin oxides. With the OMO structure, a sheet resistance of 7.1/square and a transparency above 80% for almost the entire visible spectrum were achieved. The possible application of such electrodes on a textured solar cell was demonstrated on the example of a rough ZnO substrate. An OMO structure is benchmarked in a n-i-p amorphous silicon solar cell against an AZO front contact fabricated at 200 °C. In the experiment, the OMO electrode shows a superior performance with an efficiency gain of 30%. - Highlights: • Multilayer transparent electrode based on aluminum zinc oxide (AZO) and Ag • Comparison of AZO-Ag-AZO transparent electrode to AZO and indium tin oxide • Performance of AZO-Ag-AZO transparent electrodes on textured surfaces • Comparison of amorphous silicon solar cells with different transparent electrodes

System and method for crystalline sheet growth using a cold block and gas jet

Science.gov (United States)

Kellerman, Peter L.; Mackintosh, Brian; Carlson, Frederick M.; Morrell, David; Moradian, Ala; Desai, Nandish; Sun, Dawei; Sinclair, Frank

2018-05-01

A crystallizer for growing a crystalline sheet from a melt may include a cold block having a cold block surface that faces an exposed surface of the melt, the cold block configured to generate a cold block temperature at the cold block surface that is lower than a melt temperature of the melt at the exposed surface. The system may also include a nozzle disposed within the cold block and configured to deliver a gas jet to the exposed surface, wherein the gas jet and the cold block are interoperative to generate a process zone that removes heat from the exposed surface at a first heat removal rate that is greater than a second heat removal rate from the exposed surface in outer regions outside of the process zone.

Thin Fresnel zone plate lenses for focusing underwater sound

International Nuclear Information System (INIS)

Calvo, David C.; Thangawng, Abel L.; Nicholas, Michael; Layman, Christopher N.

2015-01-01

A Fresnel zone plate (FZP) lens of the Soret type creates a focus by constructive interference of waves diffracted through open annular zones in an opaque screen. For underwater sound below MHz frequencies, a large FZP that blocks sound using high-impedance, dense materials would have practical disadvantages. We experimentally and numerically investigate an alternative approach of creating a FZP with thin (0.4λ) acoustically opaque zones made of soft silicone rubber foam attached to a thin (0.1λ) transparent rubber substrate. An ultra-thin (0.0068λ) FZP that achieves higher gain is also proposed and simulated which uses low-volume fraction, bubble-like resonant air ring cavities to construct opaque zones. Laboratory measurements at 200 kHz indicate that the rubber foam can be accurately modeled as a lossy fluid with an acoustic impedance approximately 1/10 that of water. Measured focal gains up to 20 dB agree with theoretical predictions for normal and oblique incidence. The measured focal radius of 0.68λ (peak-to-null) agrees with the Rayleigh diffraction limit prediction of 0.61 λ/NA (NA = 0.88) for a low-aberration lens

Signatures of chaos in the Brillouin zone.

Science.gov (United States)

Barr, Aaron; Barr, Ariel; Porter, Max D; Reichl, Linda E

2017-10-01

When the classical dynamics of a particle in a finite two-dimensional billiard undergoes a transition to chaos, the quantum dynamics of the particle also shows manifestations of chaos in the form of scarring of wave functions and changes in energy level spacing distributions. If we "tile" an infinite plane with such billiards, we find that the Bloch states on the lattice undergo avoided crossings, energy level spacing statistics change from Poisson-like to Wigner-like, and energy sheets of the Brillouin zone begin to "mix" as the classical dynamics of the billiard changes from regular to chaotic behavior.

Low cost solar array project cell and module formation research area: Process research of non-CZ silicon material

Science.gov (United States)

1981-01-01

Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated. The baseline diffusion masking and drive processes were compared with those involving direct liquid applications to the dendritic web silicon strips. Attempts were made to control the number of variables by subjecting dendritic web strips cut from a single web crystal to both types of operations. Data generated reinforced earlier conclusions that efficiency levels at least as high as those achieved with the baseline back junction formation process can be achieved using liquid diffusion masks and liquid dopants. The deliveries of dendritic web sheet material and solar cells specified by the current contract were made as scheduled.

46 CFR 232.4 - Balance sheet accounts.

Science.gov (United States)

2010-10-01

... 46 Shipping 8 2010-10-01 2010-10-01 false Balance sheet accounts. 232.4 Section 232.4 Shipping... ACTIVITIES UNIFORM FINANCIAL REPORTING REQUIREMENTS Balance Sheet § 232.4 Balance sheet accounts. (a.... (b) Purpose of balance sheet accounts. The balance sheet accounts are intended to disclose the...

Global ice sheet modeling

International Nuclear Information System (INIS)

Hughes, T.J.; Fastook, J.L.

1994-05-01

The University of Maine conducted this study for Pacific Northwest Laboratory (PNL) as part of a global climate modeling task for site characterization of the potential nuclear waste respository site at Yucca Mountain, NV. The purpose of the study was to develop a global ice sheet dynamics model that will forecast the three-dimensional configuration of global ice sheets for specific climate change scenarios. The objective of the third (final) year of the work was to produce ice sheet data for glaciation scenarios covering the next 100,000 years. This was accomplished using both the map-plane and flowband solutions of our time-dependent, finite-element gridpoint model. The theory and equations used to develop the ice sheet models are presented. Three future scenarios were simulated by the model and results are discussed

Sheet production apparatus for removing a crystalline sheet from the surface of a melt using gas jets located above and below the crystalline sheet

Energy Technology Data Exchange (ETDEWEB)

Kellerman, Peter L.; Thronson, Gregory D.

2017-06-14

In one embodiment, a sheet production apparatus comprises a vessel configured to hold a melt of a material. A cooling plate is disposed proximate the melt and is configured to form a sheet of the material on the melt. A first gas jet is configured to direct a gas toward an edge of the vessel. A sheet of a material is translated horizontally on a surface of the melt and the sheet is removed from the melt. The first gas jet may be directed at the meniscus and may stabilize this meniscus or increase local pressure within the meniscus.

Silicon diodes as an alternative to diamond detectors for depth dose curves and profile measurements of photon and electron radiation

International Nuclear Information System (INIS)

Scherf, Christian; Moog, Jussi; Licher, Joerg; Kara, Eugen; Roedel, Claus; Ramm, Ulla; Peter, Christiane; Zink, Klemens

2009-01-01

Background: Depth dose curves and lateral dose profiles should correspond to relative dose to water in any measured point, what can be more or less satisfied with different detectors. Diamond as detector material has similar dosimetric properties like water. Silicon diodes and ionization chambers are also commonly used to acquire dose profiles. Material and Methods: The authors compared dose profiles measured in an MP3 water phantom with a diamond detector 60003, unshielded and shielded silicon diodes 60008 and 60012 and a 0.125-cm 3 thimble chamber 233642 (PTW, Freiburg, Germany) for 6- and 25-MV photons. Electron beams of 6, 12 and 18 MeV were investigated with the diamond detector, the unshielded diode and a Markus chamber 23343. Results: The unshielded diode revealed relative dose differences at the water surface below +10% for 6-MV and +4% for 25-MV photons compared to the diamond data. These values decreased to less than 1% within the first millimeters of water depth. The shielded diode was only required to obtain correct data of the fall-off zones for photon beams larger than 10 x 10 cm 2 because of important contributions of low-energy scattered photons. For electron radiation the largest relative dose difference of -2% was observed with the unshielded silicon diode for 6 MeV within the build-up zone. Spatial resolutions were always best with the small voluminous silicon diodes. Conclusion: Relative dose profiles obtained with the two silicon diodes have the same degree of accuracy as with the diamond detector. (orig.)

Silicon diodes as an alternative to diamond detectors for depth dose curves and profile measurements of photon and electron radiation.

Science.gov (United States)

Scherf, Christian; Peter, Christiane; Moog, Jussi; Licher, Jörg; Kara, Eugen; Zink, Klemens; Rödel, Claus; Ramm, Ulla

2009-08-01

Depth dose curves and lateral dose profiles should correspond to relative dose to water in any measured point, what can be more or less satisfied with different detectors. Diamond as detector material has similar dosimetric properties like water. Silicon diodes and ionization chambers are also commonly used to acquire dose profiles. The authors compared dose profiles measured in an MP3 water phantom with a diamond detector 60003, unshielded and shielded silicon diodes 60008 and 60012 and a 0.125-cm(3) thimble chamber 233642 (PTW, Freiburg, Germany) for 6- and 25-MV photons. Electron beams of 6, 12 and 18 MeV were investigated with the diamond detector, the unshielded diode and a Markus chamber 23343. The unshielded diode revealed relative dose differences at the water surface below +10% for 6-MV and +4% for 25-MV photons compared to the diamond data. These values decreased to less than 1% within the first millimeters of water depth. The shielded diode was only required to obtain correct data of the fall-off zones for photon beams larger than 10 x 10 cm(2) because of important contributions of low-energy scattered photons. For electron radiation the largest relative dose difference of -2% was observed with the unshielded silicon diode for 6 MeV within the build-up zone. Spatial resolutions were always best with the small voluminous silicon diodes. Relative dose profiles obtained with the two silicon diodes have the same degree of accuracy as with the diamond detector.

Mathematical model of silicon smelting process basing on pelletized charge from technogenic raw materials

Science.gov (United States)

Nemchinova, N. V.; Tyutrin, A. A.; Salov, V. M.

2018-03-01

The silicon production process in the electric arc reduction furnaces (EAF) is studied using pelletized charge as an additive to the standard on the basis of the generated mathematical model. The results obtained due to the model will contribute to the analysis of the charge components behavior during melting with the achievement of optimum final parameters of the silicon production process. The authors proposed using technogenic waste as a raw material for the silicon production in a pelletized form using liquid glass and aluminum production dust from the electrostatic precipitators as a binder. The method of mathematical modeling with the help of the ‘Selector’ software package was used as a basis for the theoretical study. A model was simulated with the imitation of four furnace temperature zones and a crystalline silicon phase (25 °C). The main advantage of the created model is the ability to analyze the behavior of all burden materials (including pelletized charge) in the carbothermic process. The behavior analysis is based on the thermodynamic probability data of the burden materials interactions in the carbothermic process. The model accounts for 17 elements entering the furnace with raw materials, electrodes and air. The silicon melt, obtained by the modeling, contained 91.73 % wt. of the target product. The simulation results showed that in the use of the proposed combined charge, the recovery of silicon reached 69.248 %, which is in good agreement with practical data. The results of the crystalline silicon chemical composition modeling are compared with the real silicon samples of chemical analysis data, which showed the results of convergence. The efficiency of the mathematical modeling methods in the studying of the carbothermal silicon obtaining process with complex interphase transformations and the formation of numerous intermediate compounds using a pelletized charge as an additive to the traditional one is shown.

Mobility of carriers in the case of diffuse motion in the configuration space of restructuring divacancies in silicon

International Nuclear Information System (INIS)

Dolgolenko, A.P.

2014-01-01

Calculated temperature dependence of the electron mobility and describes the behavior of holes in high resistance silicon Czochralski grown and float zone melting, after irradiation by fast neutrons reactor and a subsequent isochronous and isothermal annealing. In the framework of the elaborated model of defect clusters was calculated temperature dependence of the concentration of electrons and holes in silicon samples. It is shown that the configuration change divacancies in clusters of defects and in conducting matrix leads to increase in the height of the drift barriers and concentration of long-wave phonons in conducting matrix samples of silicon. It was defined temperature dependence of the height of the drift barriers in the process of ageing at room temperature n-Si

Geochemistry of silicon isotopes

Energy Technology Data Exchange (ETDEWEB)

Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

2018-04-01

Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

Proton irradiation effects in silicon devices

Energy Technology Data Exchange (ETDEWEB)

Simoen, E; Vanhellemont, J; Alaerts, A [IMEC, Leuven (Belgium); and others

1997-03-01

Proton irradiation effects in silicon devices are studied for components fabricated in various substrates in order to reveal possible hardening effects. The degradation of p-n junction diodes increases in first order proportionally with the fluence, when submitted to 10 MeV proton irradiations in the range 5x10{sup 9} cm{sup -2} to 5x10{sup 11} cm{sup -2}. The damage coefficients for both p- and n-type Czochralski, Float-Zone and epitaxial wafers are reported. Charge-Coupled Devices fabricated in a 1.2 {mu}m CCD-CMOS technology are shown to be quite resistant to 59 MeV H{sup +} irradiations, irrespective of the substrate type. (author)

Diatom-induced silicon isotopic fractionation in Antarctic sea ice

Science.gov (United States)

Francois, F.; Damien, C.; Jean-Louis, T.; Anthony, W.; Luc, A.

2006-12-01

grown in a semi-closed system in which the dissolved silicon pool (i.e. brines) is partially replenished. Finally, we show that the average silicon-isotopic composition of the sea-ice diatoms (+0.63 p.mil) is very distinct from the one of biogenic silica in the seasonal ice zone mixed layer (+0.08 p.mil) indicating that sea- ice diatoms either contribute to an insignificant part of the whole diatoms biomass in the upper water layer (without affecting the silicon-isotopic budget), and/or that they are directly exported below the mixed layer. In this latter case, we will study the possibility to use the distinct signature of the sea ice diatoms as a tracer of paleo-sea ice extension in oceanic sediments.

Vitamin and Mineral Supplement Fact Sheets

Science.gov (United States)

... website Submit Search NIH Office of Dietary Supplements Vitamin and Mineral Supplement Fact Sheets Search the list ... Supplements: Background Information Botanical Dietary Supplements: Background Information Vitamin and Mineral Fact Sheets Botanical Supplement Fact Sheets ...

Dynamics of Radially Expanding Liquid Sheets

Science.gov (United States)

Majumdar, Nayanika; Tirumkudulu, Mahesh S.

2018-04-01

The process of atomization often involves ejecting thin liquid sheets at high speeds from a nozzle that causes the sheet to flap violently and break up into fine droplets. The flapping of the liquid sheet has long been attributed to the sheet's interaction with the surrounding gas phase. Here, we present experimental evidence to the contrary and show that the flapping is caused by the thinning of the liquid sheet as it spreads out from the nozzle exit. The measured growth rates of the waves agree remarkably well with the predictions of a recent theory that accounts for the sheet's thinning but ignores aerodynamic interactions. We anticipate these results to not only lead to more accurate predictions of the final drop-size distribution but also enable more efficient designs of atomizers.

Sensing of DNA by graphene-on-silicon FET structures at DC and 101 GHz

Directory of Open Access Journals (Sweden)

E.R. Brown

2015-09-01

Full Text Available A graphene–silicon field-effect transistor (GFET structure is demonstrated as a detector of single-stranded 13-mer DNA simultaneously at DC and 101 GHz at three different molarities: 0.01, 1.0 and 100 nM. The mechanism for detection at DC is the DNA-induced change in lateral sheet conductance, whereas at 101 GHz it is the change in RF sheet conductance and the resulting effect on the perpendicular beam transmittance through the GFET acting as an optical etalon. For example, after application and drying of the DNA on a GFET film biased to a DC sheet conductance of 2.22 mS, the 1.0 nM solution is found to reduce this by 1.24 mS with a post-detection signal-to-noise ratio of 43 dB, and to increase the transmitted 101-GHz signal from 0.828 to 0.907 mV (arbitrary units with a post-detection signal-to-noise ratio of 36 dB. The increase in transmittance is consistent with a drop of the 101-GHz sheet conductance, but not as much drop as the DC value. Excellent sensitivity is also achieved with the 0.01-nm solution, yielding a DC SNR of 41 dB and a 101-GHz SNR of 23 dB. Keywords: Graphene, DNA, THz, DC, Detection

Silicon heterojunction transistor

International Nuclear Information System (INIS)

Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

1979-01-01

SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

Recombination via point defects and their complexes in solar silicon

Energy Technology Data Exchange (ETDEWEB)

Peaker, A.R.; Markevich, V.P.; Hamilton, B. [Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Parada, G.; Dudas, A.; Pap, A. [Semilab, 2 Prielle Kornelia Str, 1117 Budapest (Hungary); Don, E. [Semimetrics, PO Box 36, Kings Langley, Herts WD4 9WB (United Kingdom); Lim, B.; Schmidt, J. [Institute for Solar Energy Research (ISFH) Hamlen, 31860 Emmerthal (Germany); Yu, L.; Yoon, Y.; Rozgonyi, G. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907 (United States)

2012-10-15

Electronic grade Czochralski and float zone silicon in the as grown state have a very low concentration of recombination generation centers (typically <10{sup 10} cm{sup -3}). Consequently, in integrated circuit technologies using such material, electrically active inadvertent impurities and structural defects are rarely detectable. The quest for cheap photovoltaic cells has led to the use of less pure silicon, multi-crystalline material, and low cost processing for solar applications. Cells made in this way have significant extrinsic recombination mechanisms. In this paper we review recombination involving defects and impurities in single crystal and in multi-crystalline solar silicon. Our main techniques for this work are recombination lifetime mapping measurements using microwave detected photoconductivity decay and variants of deep level transient spectroscopy (DLTS). In particular, we use Laplace DLTS to distinguish between isolated point defects, small precipitate complexes and decorated extended defects. We compare the behavior of some common metallic contaminants in solar silicon in relation to their effect on carrier lifetime and cell efficiency. Finally, we consider the role of hydrogen passivation in relation to transition metal contaminants, grain boundaries and dislocations. We conclude that recombination via point defects can be significant but in most multi-crystalline material the dominant recombination path is via decorated dislocation clusters within grains with little contribution to the overall recombination from grain boundaries. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Buckling and stretching of thin viscous sheets

Science.gov (United States)

O'Kiely, Doireann; Breward, Chris; Griffiths, Ian; Howell, Peter; Lange, Ulrich

2016-11-01

Thin glass sheets are used in smartphone, battery and semiconductor technology, and may be manufactured by producing a relatively thick glass slab and subsequently redrawing it to a required thickness. The resulting sheets commonly possess undesired centerline ripples and thick edges. We present a mathematical model in which a viscous sheet undergoes redraw in the direction of gravity, and show that, in a sufficiently strong gravitational field, buckling is driven by compression in a region near the bottom of the sheet, and limited by viscous resistance to stretching of the sheet. We use asymptotic analysis in the thin-sheet, low-Reynolds-number limit to determine the centerline profile and growth rate of such a viscous sheet.

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

Science.gov (United States)

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.

1994-01-01

Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

Ohm's law for a current sheet

Science.gov (United States)

Lyons, L. R.; Speiser, T. W.

1985-01-01

The paper derives an Ohm's law for single-particle motion in a current sheet, where the magnetic field reverses in direction across the sheet. The result is considerably different from the resistive Ohm's law often used in MHD studies of the geomagnetic tail. Single-particle analysis is extended to obtain a self-consistency relation for a current sheet which agrees with previous results. The results are applicable to the concept of reconnection in that the electric field parallel to the current is obtained for a one-dimensional current sheet with constant normal magnetic field. Dissipated energy goes directly into accelerating particles within the current sheet.

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

Science.gov (United States)

Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

2018-06-01

Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

Fluorescence and thermoluminescence in silicon oxide films rich in silicon

International Nuclear Information System (INIS)

Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

2009-10-01

In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

Porous silicon used as an oxide diffusion mask to produce a periodic micro doped n{sup ++}/n regions

Energy Technology Data Exchange (ETDEWEB)

Dimassi, Wissem; Jafel, Hayet; Lajnef, Mohamed; Ali Kanzari, M.; Bouaicha, Mongi; Bessais, Brahim; Ezzaouia, Hatem [Laboratoire de Photovoltaique, Centre de Recherche et des Technologies de l' Energie, PB: 95, Hammam Lif 2050 (Tunisia)

2011-06-15

The realization of screen-printed contacts on silicon solar cells requires highly doped regions under the fingers and lowly doped and thin ones between them. In this work, we present a low-cost approach to fabricate selective emitter (n{sup ++}/n doped silicon regions), using oxidized porous silicon (ox-PS) as a mask. Micro-periodic fingers were opened on the porous silicon layer using a micro groove machining process. Optimized phosphorous diffusion through the micro grooved ox-PS let us obtain n{sup ++} doped regions in opened zones and n doped large regions underneath the ox-PS layer. The dark I-V characteristics of the obtained device and Fourier transform infrared (FTIR) spectroscopy investigations of the PS layer show the possibility to use PS as a dielectric layer. The Light Beam Induced Current (LBIC) mapping of the realized device, confirm the presence of a micro periodic n{sup ++}/n type structure. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Buried oxide layer in silicon

Science.gov (United States)

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Non-fossil reduction materials in the silicon process - properties and behaviour

Energy Technology Data Exchange (ETDEWEB)

Myrhaug, Edin Henrik

2003-07-01

thermogravimetric experiments on single spheres have been successfully applied in packed bed models to describe the reaction between carbon and SiO-gas in both the SINTEF SiO-reactivity test and the outer zone of a hypothetical silicon furnace. The following main observations were done from the simulations: (1) Smaller particles are converted faster than larger ones of same material. (2) Charcoal particles are converted faster than coke particles of same radius. The simulations with the packed bed model gave results that indicated some differences between the reduction materials that appear logical. A silicon smelting experiment with two charge mixtures with different compositions of charcoal, wood chips and coke (50% and 100% biocarbon, respectively) were carried out in the 150 kW single-phase submerged-arc furnace at SINTEF/NTNU in Trondheim. This experiment did not reveal any significant difference between these charge mixtures. However, there were some technical problems during smelting experiments that make the conclusions about this somewhat uncertain. After the silicon smelting experiment a new method of fixating the inner structure of the furnace with epoxy compound with subsequent making a cross section plate wire saw instead of traditional excavation was applied out without any particular problems. and gave very interesting results. Samples made by core drill from different areas of the cross section plate were analysed in the microprobe. Together with evaluation of the plate itself this gave a good view of the inner structure of the furnace and was a valuable aid to evaluate different reaction mechanism in different zones of the furnace. Compared with previous excavations, an overview of the inner structure of the process was easier and faster established. The results from this work indicates that it is possible to increase the use of biocarbon (charcoal and wood chips) for silicon metal production in submerged arc furnaces without losing performance or making the

Adjustable focus laser sheet module for generating constant maximum width sheets for use in optical flow diagnostics

International Nuclear Information System (INIS)

Hult, J; Mayer, S

2011-01-01

A general design of a laser light sheet module with adjustable focus is presented, where the maximum sheet width is preserved over a fixed region. In contrast, conventional focusing designs are associated with a variation in maximum sheet width with focal position. A four lens design is proposed here, where the first three lenses are employed for focusing, and the last for sheet expansion. A maximum sheet width of 1100 µm was maintained over a 50 mm long distance, for focal distances ranging from 75 to 500 mm, when a 532 nm laser beam with a beam quality factor M 2 = 29 was used for illumination

Ion beam studied of silicon oxynitride and silicon nitroxide thin layers

International Nuclear Information System (INIS)

Oude Elferink, J.B.

1989-01-01

In this the processes occurring during high temperature treatments of silicon oxynitride and silicon oxide layers are described. Oxynitride layers with various atomic oxygen to nitrogen concentration ration (O/N) are considered. The high energy ion beam techniques Rutherford backscattering spectroscopy, elastic recoil detection and nuclear reaction analysis have been used to study the layer structures. A detailed discussion of these ion beam techniques is given. Numerical methods used to obtain quantitative data on elemental compositions and depth profiles are described. The electrical compositions and depth profiles are described. The electrical properties of silicon nitride films are known to be influenced by the behaviour of hydrogen in the film during high temperature anneling. Investigations of the behaviour of hydrogen are presented. Oxidation of silicon (oxy)nitride films in O 2 /H 2 0/HCl and nitridation of silicon dioxide films in NH 3 are considered since oxynitrides are applied as an oxidation mask in the LOCOS (Local oxidation of silicon) process. The nitridation of silicon oxide layers in an ammonia ambient is considered. The initial stage and the dependence on the oxide thickness of nitrogen and hydrogen incorporation are discussed. Finally, oxidation of silicon oxynitride layers and of silicon oxide layers are compared. (author). 76 refs.; 48 figs.; 1 tab

Collisionless current sheet equilibria

Science.gov (United States)

Neukirch, T.; Wilson, F.; Allanson, O.

2018-01-01

Current sheets are important for the structure and dynamics of many plasma systems. In space and astrophysical plasmas they play a crucial role in activity processes, for example by facilitating the release of magnetic energy via processes such as magnetic reconnection. In this contribution we will focus on collisionless plasma systems. A sensible first step in any investigation of physical processes involving current sheets is to find appropriate equilibrium solutions. The theory of collisionless plasma equilibria is well established, but over the past few years there has been a renewed interest in finding equilibrium distribution functions for collisionless current sheets with particular properties, for example for cases where the current density is parallel to the magnetic field (force-free current sheets). This interest is due to a combination of scientific curiosity and potential applications to space and astrophysical plasmas. In this paper we will give an overview of some of the recent developments, discuss their potential applications and address a number of open questions.

A New Understanding of Near-Threshold Damage for 200 keV Irradiation In Silicon

International Nuclear Information System (INIS)

Stoddard, Nathan; Duscher, Gerd J.M.; Windl, Wolfgang; Rozgonyi, G.A.

2005-01-01

Recently we reported room temperature point defect creation and subsequent extended defect nucleation in nitrogen-doped silicon during 200 kV electron irradiation, while identical irradiation of nitrogen-free silicon produced no effect. In this paper, first principles calculations are combined with new transmission electron microscope (TEM) observations to support a new model for elastic electron-silicon interactions in the TEM, which encompasses both nitrogen doped and nitrogen free silicon. Specifically, the nudged elastic band method was used to study the energetics along the diffusion path during an electron collision event in the vicinity of a nitrogen pair. It was found that the 0 K estimate for the energy barrier of a knock-on event is lowered from ∼12 to 6.2 eV. However, this is still inadequate to explain the observations. We therefore propose an increase in the energy barrier for Frenkel pair recombination associated with N 2 -V bonding. Concerning pure silicon, stacking fault formation near irradiation-induced holes demonstrates the participation of bulk processes. In low oxygen float zone material, 2--5 nm voids were formed, while oxygen precipitation in Czochralski Si has been verified by electron energy-loss spectroscopy. Models of irradiation-induced point defect aggregation are presented and it is concluded that these must be bulk and not surface mediated phenomena.

Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate

Directory of Open Access Journals (Sweden)

Kyosuke Seya

2015-01-01

Full Text Available The formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3-HfO2 eutectic structure grows from the top of the intermediate layer.

Nonlinear silicon photonics

Science.gov (United States)

Tsia, Kevin K.; Jalali, Bahram

2010-05-01

An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

17 CFR 210.6-04 - Balance sheets.

Science.gov (United States)

2010-04-01

... 17 Commodity and Securities Exchanges 2 2010-04-01 2010-04-01 false Balance sheets. 210.6-04... sheets. This rule is applicable to balance sheets filed by registered investment companies except for... of this part. Balance sheets filed under this rule shall comply with the following provisions: Assets...

Tunable multiple plasmon induced transparencies in parallel graphene sheets and its applications

Science.gov (United States)

khazaee, Sara; Granpayeh, Nosrat

2018-01-01

Tunable plasmon induced transparency is achieved by using only two parallel graphene sheets beyond silicon diffractive grating in mid-infrared region. Excitation of the guided-wave resonance (GWR) in this structure is illustrated on the normal incident transmission spectra and plays the bright resonance mode role. Weak hybridization between two bright modes, creates plasmon induced transparency (PIT) optical response. The resonance frequency of transparency window can be tuned by different geometrical parameters. Also, variation of graphene Fermi energy can be used to achieve tunability of the resonance frequency of transparency window without reconstruction and re-fabrication of the structure. We demonstrate the existence of multiple PIT spectral responses resulting from a series of self-assembled GWRs to be used as the wavelength demultiplexer. This study can be used for design of the optical ultra-compact devices and photonic integrated circuits.

Liquid phase epitaxial growth of silicon on porous silicon for photovoltaic applications

International Nuclear Information System (INIS)

Berger, S.; Quoizola, S.; Fave, A.; Kaminski, A.; Perichon, S.; Barbier, D.; Laugier, A.

2001-01-01

The aim of this experiment is to grow a thin silicon layer ( 2 atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p-Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p-Si (111) oriented wafer, homogeneous layers were obtained. (orig.)

Ice sheet in peril

DEFF Research Database (Denmark)

Hvidberg, Christine Schøtt

2016-01-01

Earth's large ice sheets in Greenland and Antarctica are major contributors to sea level change. At present, the Greenland Ice Sheet (see the photo) is losing mass in response to climate warming in Greenland (1), but the present changes also include a long-term response to past climate transitions...

The transposition of the balance sheet to financial and functional balance sheet. Research and development

Directory of Open Access Journals (Sweden)

Liana GĂDĂU

2015-09-01

Full Text Available As the title suggests, through this paper we want to highlight the necessity of treating again the content and the form of the balance sheet in order to adapt it to a more efficient analysis, this way surpassing the informational valences of the classic balance sheet. The functional and the financial balance sheet will be taken into account. These models of balance sheet permit the complex analyses regarding the solvability or the bankruptcy risk of an enterprise to take place, and also other analyses, like the analysis of the structure and the financial/ functional equilibrium, the analysis of the company on operating cycles and their role in the functioning of the company. Through the particularities offered by each of these two models of balance sheet, we want to present the advantages of a superior informing. This content of this material is based on a vast investigation of the specialized literature.

The 1988-2003 Greenland ice sheet melt extent using passive microwave satellite data and a regional climate model

Energy Technology Data Exchange (ETDEWEB)

Fettweis, Xavier; Ypersele, Jean-Pascal van [Universite Catholique de Louvain, Institut d' Astronomie et de Geophysique de G. Lemaitre, Louvain-La-Neuve (Belgium); Gallee, Hubert [CNRS, Laboratoire de Glaciologie et Geophysique de l' Environnement, Grenoble (France); Lefebre, Filip [Vito-IMS (Flemish Institute for Technological Research-Integral Environmental Studies), Mol (Belgium)

2006-10-15

Measurements from ETH-Camp and JAR1 AWS (West Greenland) as well as coupled atmosphere-snow regional climate simulations have highlighted flaws in the cross-polarized gradient ratio (XPGR) technique used to identify melt from passive microwave satellite data. It was found that dense clouds (causing notably rainfall) on the ice sheet severely perturb the XPGR melt signal. Therefore, the original XPGR melt detection algorithm has been adapted to better incorporate atmospheric variability over the ice sheet and an updated melt trend for the 1988-2003 period has been calculated. Compared to the original algorithm, the melt zone area increase is eight times higher (from 0.2 to 1.7% year{sup -1}). The increase is higher with the improved XPGR technique because rainfall also increased during this period. It is correlated to higher atmospheric temperatures. Finally, the model shows that the total ice sheet runoff is directly proportional to the melt extent surface detected by satellites. These results are important for the understanding of the effect of Greenland melting on the stability of the thermohaline circulation. (orig.)

Study of the influence between the strength of antibending of working rolls on the widening during hot rolling of thin sheet metal

Directory of Open Access Journals (Sweden)

U. Muhin

2016-07-01

Full Text Available Based on the variation principle of Jourdan was developed a mathematical model of the process of widening freely in hot rolling of thin sheet metal. The principle applies to rigid-plastic materials and for the cinematically admissible area of speeds. The developed model allows to study the distribution of the widening on the length of the deformation zone depending on the parameters of the rolling process and sheet metal. Results are obtained, characterizing the size of the widening and effectiveness of the process control on tension at the entrance and exit from the stand. The widening is dependent on the strength of anti bending.

Ice_Sheets_CCI: Essential Climate Variables for the Greenland Ice Sheet

Science.gov (United States)

Forsberg, R.; Sørensen, L. S.; Khan, A.; Aas, C.; Evansberget, D.; Adalsteinsdottir, G.; Mottram, R.; Andersen, S. B.; Ahlstrøm, A.; Dall, J.; Kusk, A.; Merryman, J.; Hvidberg, C.; Khvorostovsky, K.; Nagler, T.; Rott, H.; Scharrer, M.; Shepard, A.; Ticconi, F.; Engdahl, M.

2012-04-01

As part of the ESA Climate Change Initiative (www.esa-cci.org) a long-term project "ice_sheets_cci" started January 1, 2012, in addition to the existing 11 projects already generating Essential Climate Variables (ECV) for the Global Climate Observing System (GCOS). The "ice_sheets_cci" goal is to generate a consistent, long-term and timely set of key climate parameters for the Greenland ice sheet, to maximize the impact of European satellite data on climate research, from missions such as ERS, Envisat and the future Sentinel satellites. The climate parameters to be provided, at first in a research context, and in the longer perspective by a routine production system, would be grids of Greenland ice sheet elevation changes from radar altimetry, ice velocity from repeat-pass SAR data, as well as time series of marine-terminating glacier calving front locations and grounding lines for floating-front glaciers. The ice_sheets_cci project will involve a broad interaction of the relevant cryosphere and climate communities, first through user consultations and specifications, and later in 2012 optional participation in "best" algorithm selection activities, where prototype climate parameter variables for selected regions and time frames will be produced and validated using an objective set of criteria ("Round-Robin intercomparison"). This comparative algorithm selection activity will be completely open, and we invite all interested scientific groups with relevant experience to participate. The results of the "Round Robin" exercise will form the algorithmic basis for the future ECV production system. First prototype results will be generated and validated by early 2014. The poster will show the planned outline of the project and some early prototype results.

AI applications in sheet metal forming

CERN Document Server

Hussein, Hussein

2017-01-01

This book comprises chapters on research work done around the globe in the area of artificial intelligence (AI) applications in sheet metal forming. The first chapter offers an introduction to various AI techniques and sheet metal forming, while subsequent chapters describe traditional procedures/methods used in various sheet metal forming processes, and focus on the automation of those processes by means of AI techniques, such as KBS, ANN, GA, CBR, etc. Feature recognition and the manufacturability assessment of sheet metal parts, process planning, strip-layout design, selecting the type and size of die components, die modeling, and predicting die life are some of the most important aspects of sheet metal work. Traditionally, these activities are highly experience-based, tedious and time consuming. In response, researchers in several countries have applied various AI techniques to automate these activities, which are covered in this book. This book will be useful for engineers working in sheet metal industri...

Rapid thermal process by RF heating of nano-graphene layer/silicon substrate structure: Heat explosion theory approach

Science.gov (United States)

Sinder, M.; Pelleg, J.; Meerovich, V.; Sokolovsky, V.

2018-03-01

RF heating kinetics of a nano-graphene layer/silicon substrate structure is analyzed theoretically as a function of the thickness and sheet resistance of the graphene layer, the dimensions and thermal parameters of the structure, as well as of cooling conditions and of the amplitude and frequency of the applied RF magnetic field. It is shown that two regimes of the heating can be realized. The first one is characterized by heating of the structure up to a finite temperature determined by equilibrium between the dissipated loss power caused by induced eddy-currents and the heat transfer to environment. The second regime corresponds to a fast unlimited temperature increase (heat explosion). The criterions of realization of these regimes are presented in the analytical form. Using the criterions and literature data, it is shown the possibility of the heat explosion regime for a graphene layer/silicon substrate structure at RF heating.

Crystalline to amorphous transformation in silicon

International Nuclear Information System (INIS)

Cheruvu, S.M.

1982-09-01

In the present investigation, an attempt was made to understand the fundamental mechanism of crystalline-to-amorphous transformation in arsenic implanted silicon using high resolution electron microscopy. A comparison of the gradual disappearance of simulated lattice fringes with increasing Frenkel pair concentration with the experimental observation of sharp interfaces between crystalline and amorphous regions was carried out leading to the conclusion that when the defect concentration reaches a critical value, the crystal does relax to an amorphous state. Optical diffraction experiments using atomic models also supported this hypothesis. Both crystalline and amorphous zones were found to co-exist with sharp interfaces at the atomic level. Growth of the amorphous fraction depends on the temperature, dose rate and the mass of the implanted ion. Preliminary results of high energy electron irradiation experiments at 1.2 MeV also suggested that clustering of point defects occurs near room temperature. An observation in a high resolution image of a small amorphous zone centered at the core of a dislocation is presented as evidence that the nucleation of an amorphous phase is heterogeneous in nature involving clustering or segregation of point defects near existing defects

Image Classification of Ribbed Smoked Sheet using Learning Vector Quantization

Science.gov (United States)

Rahmat, R. F.; Pulungan, A. F.; Faza, S.; Budiarto, R.

2017-01-01

Natural rubber is an important export commodity in Indonesia, which can be a major contributor to national economic development. One type of rubber used as rubber material exports is Ribbed Smoked Sheet (RSS). The quantity of RSS exports depends on the quality of RSS. RSS rubber quality has been assigned in SNI 06-001-1987 and the International Standards of Quality and Packing for Natural Rubber Grades (The Green Book). The determination of RSS quality is also known as the sorting process. In the rubber factones, the sorting process is still done manually by looking and detecting at the levels of air bubbles on the surface of the rubber sheet by naked eyes so that the result is subjective and not so good. Therefore, a method is required to classify RSS rubber automatically and precisely. We propose some image processing techniques for the pre-processing, zoning method for feature extraction and Learning Vector Quantization (LVQ) method for classifying RSS rubber into two grades, namely RSS1 and RSS3. We used 120 RSS images as training dataset and 60 RSS images as testing dataset. The result shows that our proposed method can give 89% of accuracy and the best perform epoch is in the fifteenth epoch.

Wafer-level integration of NiTi shape memory alloy on silicon using Au–Si eutectic bonding

International Nuclear Information System (INIS)

Gradin, Henrik; Bushra, Sobia; Braun, Stefan; Stemme, Göran; Van der Wijngaart, Wouter

2013-01-01

This paper reports on the wafer level integration of NiTi shape memory alloy (SMA) sheets with silicon substrates through Au–Si eutectic bonding. Different bond parameters, such as Au layer thicknesses and substrate surface treatments were evaluated. The amount of gold in the bond interface is the most important parameter to achieve a high bond yield; the amount can be determined by the barrier layers between the Au and Si or by the amount of Au deposition. Deposition of a gold layer of more than 1 μm thickness before bonding gives the most promising results. Through patterning of the SMA sheet and by limiting bonding to small areas, stresses created by the thermal mismatch between Si and NiTi are reduced. With a gold layer of 1 μm thickness and bond areas between 200 × 200 and 800 × 800 μm 2 a high bond strength and a yield above 90% is demonstrated. (paper)

Effect of impurities on the growth of {113} interstitial clusters in silicon under electron irradiation

Science.gov (United States)

Nakai, K.; Hamada, K.; Satoh, Y.; Yoshiie, T.

2011-01-01

The growth and shrinkage of interstitial clusters on {113} planes were investigated in electron irradiated Czochralski grown silicon (Cz-Si), floating-zone silicon (Fz-Si), and impurity-doped Fz-Si (HT-Fz-Si) using a high voltage electron microscope. In Fz-Si, {113} interstitial clusters were formed only near the beam incident surface after a long incubation period, and shrank on subsequent irradiation from the backside of the specimen. In Cz-Si and HT-Fz-Si, {113} interstitial clusters nucleated uniformly throughout the specimen without incubation, and began to shrink under prolonged irradiation at higher electron beam intensity. At lower beam intensity, however, the {113} interstitial cluster grew stably. These results demonstrate that the {113} interstitial cluster cannot grow without a continuous supply of impurities during electron irradiation. Detailed kinetics of {113} interstitial cluster growth and shrinkage in silicon, including the effects of impurities, are proposed. Then, experimental results are analyzed using rate equations based on these kinetics.

Visualization of nanosecond laser-induced dewetting, ablation and crystallization processes in thin silicon films

Science.gov (United States)

Qi, Dongfeng; Zhang, Zifeng; Yu, Xiaohan; Zhang, Yawen

2018-06-01

In the present work, nanosecond pulsed laser crystallization, dewetting and ablation of thin amorphous silicon films are investigated by time-resolved imaging. Laser pulses of 532 nm wavelength and 7 ns temporal width are irradiated on silicon film. Below the dewetting threshold, crystallization process happens after 400 ns laser irradiation in the spot central region. With the increasing of laser fluence, it is observed that the dewetting process does not conclude until 300 ns after the laser irradiation, forming droplet-like particles in the spot central region. At higher laser intensities, ablative material removal occurs in the spot center. Cylindrical rims are formed in the peripheral dewetting zone due to solidification of transported matter at about 500 ns following the laser pulse exposure.

Energy information sheets

Energy Technology Data Exchange (ETDEWEB)

NONE

1995-07-01

The National Energy Information Center (NEIC), as part of its mission, provides energy information and referral assistance to Federal, State, and local governments, the academic community, business and industrial organizations, and the public. The Energy Information Sheets was developed to provide general information on various aspects of fuel production, prices, consumption, and capability. Additional information on related subject matter can be found in other Energy Information Administration (EIA) publications as referenced at the end of each sheet.

Experiments on sheet metal shearing

OpenAIRE

Gustafsson, Emil

2013-01-01

Within the sheet metal industry, different shear cutting technologies are commonly used in several processing steps, e.g. in cut to length lines, slitting lines, end cropping etc. Shearing has speed and cost advantages over competing cutting methods like laser and plasma cutting, but involves large forces on the equipment and large strains in the sheet material.Numerical models to predict forces and sheared edge geometry for different sheet metal grades and different shear parameter set-ups a...

Nonlinear silicon photonics

Science.gov (United States)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

Transformational silicon electronics

KAUST Repository

Rojas, Jhonathan Prieto

2014-02-25

In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

Predicting Pulsar Scintillation from Refractive Plasma Sheets

Science.gov (United States)

Simard, Dana; Pen, Ue-Li

2018-05-01

The dynamic and secondary spectra of many pulsars show evidence for long-lived, aligned images of the pulsar that are stationary on a thin scattering sheet. One explanation for this phenomenon considers the effects of wave crests along sheets in the ionized interstellar medium, such as those due to Alfvén waves propagating along current sheets. If these sheets are closely aligned to our line-of-sight to the pulsar, high bending angles arise at the wave crests and a selection effect causes alignment of images produced at different crests, similar to grazing reflection off of a lake. Using geometric optics, we develop a simple parameterized model of these corrugated sheets that can be constrained with a single observation and that makes observable predictions for variations in the scintillation of the pulsar over time and frequency. This model reveals qualitative differences between lensing from overdense and underdense corrugated sheets: Only if the sheet is overdense compared to the surrounding interstellar medium can the lensed images be brighter than the line-of-sight image to the pulsar, and the faint lensed images are closer to the pulsar at higher frequencies if the sheet is underdense, but at lower frequencies if the sheet is overdense.

Mechanical behavior of fiber/matrix interfaces in CFRP sheets subjected to plastic deformation

Directory of Open Access Journals (Sweden)

Kamiya Ryuta

2016-01-01

Full Text Available The use of Carbon Fiber Reinforced Plastic (CFRP is increasing markedly, partially in the aviation industry, but it has been considered that CFRP sheets cannot be formed by press-forming techniques owing to the low ductility of CFRP. Since the mechanical characteristics of CFRP are dominated by the microscale structure, it is possible to improve its formability by optimizing the material structure. Therefore, to improve the formability, the interaction between the carbon fibers and the matrix must be clarified. In this study, microscale analyses were conducted by a finite-element model with cohesive zone elements.

Silicon Microspheres Photonics

International Nuclear Information System (INIS)

Serpenguzel, A.

2008-01-01

Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

Energized Oxygen : Speiser Current Sheet Bifurcation

Science.gov (United States)

George, D. E.; Jahn, J. M.

2017-12-01

A single population of energized Oxygen (O+) is shown to produce a cross-tail bifurcated current sheet in 2.5D PIC simulations of the magnetotail without the influence of magnetic reconnection. Treatment of oxygen in simulations of space plasmas, specifically a magnetotail current sheet, has been limited to thermal energies despite observations of and mechanisms which explain energized ions. We performed simulations of a homogeneous oxygen background, that has been energized in a physically appropriate manner, to study the behavior of current sheets and magnetic reconnection, specifically their bifurcation. This work uses a 2.5D explicit Particle-In-a-Cell (PIC) code to investigate the dynamics of energized heavy ions as they stream Dawn-to-Dusk in the magnetotail current sheet. We present a simulation study dealing with the response of a current sheet system to energized oxygen ions. We establish a, well known and studied, 2-species GEM Challenge Harris current sheet as a starting point. This system is known to eventually evolve and produce magnetic reconnection upon thinning of the current sheet. We added a uniform distribution of thermal O+ to the background. This 3-species system is also known to eventually evolve and produce magnetic reconnection. We add one additional variable to the system by providing an initial duskward velocity to energize the O+. We also traced individual particle motion within the PIC simulation. Three main results are shown. First, energized dawn- dusk streaming ions are clearly seen to exhibit sustained Speiser motion. Second, a single population of heavy ions clearly produces a stable bifurcated current sheet. Third, magnetic reconnection is not required to produce the bifurcated current sheet. Finally a bifurcated current sheet is compatible with the Harris current sheet model. This work is the first step in a series of investigations aimed at studying the effects of energized heavy ions on magnetic reconnection. This work differs

Experimental formability analysis of bondal sandwich sheet

Science.gov (United States)

Kami, Abdolvahed; Banabic, Dorel

2018-05-01

Metal/polymer/metal sandwich sheets have recently attracted the interests of industries like automotive industry. These sandwich sheets have superior properties over single-layer metallic sheets including good sound and vibration damping and light weight. However, the formability of these sandwich sheets should be enhanced which requires more research. In this paper, the formability of Bondal sheet (DC06/viscoelastic polymer/DC06 sandwich sheet) was studied through different types of experiments. The mechanical properties of Bondal were determined by uniaxial tensile tests. Hemispherical punch stretching and hydraulic bulge tests were carried out to determine the forming limit diagram (FLD) of Bondal. Furthermore, cylindrical and square cup drawing tests were performed in dry and oil lubricated conditions. These tests were conducted at different blank holding forces (BHFs). An interesting observation about Bondal sheet deep drawing was obtaining of higher drawing depths at dry condition in comparison with oil-lubricated condition.

High-voltage electron-microscopical observation of crack-tip dislocations in silicon crystals

International Nuclear Information System (INIS)

Tanaka, Masaki; Higashida, Kenji

2005-01-01

Crack-tip dislocations in silicon single crystals were observed by high-voltage electron microscopy. Cracks were introduced into silicon wafers at room temperature by a Vickers indenter. The indented specimens were annealed at 823 K in order to activate dislocation emission from the crack tip under the residual stress due to the indentation. In the specimen without annealing, no dislocations were observed around the crack. On the other hand, in the specimen after the annealing, the aspect of the early stage of dislocation emission was observed, where dislocations were emitted not as a perfect dislocation but as a partial dislocation in the hinge-type plastic zone. Prominent dislocation arrays that were emitted from a crack tip were also observed, and they were found to be of shielding type, which increases the fracture toughness of those crystals

Interface properties of the amorphous silicon/crystalline silicon heterojunction photovoltaic cell

Science.gov (United States)

Halliop, Basia

Amorphous-crystalline silicon (a-Si:H/c-Si) heterojunctions have the potential of being a very high efficiency silicon photovoltaic platform technology with accompanying cost and energy budget reductions. In this research a heterojunction cell structure based on a-Si:H deposited using a DC saddle field plasma enhanced vapour deposition (DCSF PECVD) technique is studied, and the a-Si:H/c-Si and indium tin oxide/a-Si:H interfaces are examined using several characterization methods. Photocarrier radiometry (PCR) is used for the first time to probe the a-Si:H/c-Si junction. PCR is demonstrated as a carrier lifetime measurement technique -- specifically, confirming carrier lifetimes above 1 ms for 1-5 Ocm phosphorous-doped c-Si wafers passivated on both sides with 30 nm of i-a-Si:H. PCR is also used to determine surface recombination velocity and mobility, and to probe recombination at the a-Si:H/c-Si interface, distinguishing interface recombination from recombination within the a-Si:H layer or at the a-Si:H surface. A complementary technique, lateral conductivity is applied over a temperature range of 140 K to 430 K to construct energy band diagrams of a-Si:H/c-Si junctions. Boron doped a-Si:H films on glass are shown to have activation energies of 0.3 to 0.35 eV, tuneable by adjusting the diborane to silane gas ratio during deposition. Heterojunction samples show evidence of a strong hole inversion layer and a valence band offset of approximately 0.4 eV; carrier concentration in the inversion layer is reduced in p-a-Si:H/i-a-Si:H/ c-Si structures as intrinsic layer thickness increases, while carrier lifetime is increased. The indium tin oxide/amorphous silicon interface is also examined. Optimal ITO films were prepared with a sheet resistance of 17.3 O/[special character omitted] and AM1.5 averaged transmittance of 92.1%., for a film thickness of approximately 85 nm, using temperatures below 200°C. Two different heat treatments are found to cause crystallization of

Production of technical silicon and silicon carbide from rice-husk

Directory of Open Access Journals (Sweden)

A. Z. Issagulov

2014-10-01

Full Text Available In the article there are studied physical and chemical properties of silicon-carbonic raw material – rice-husk, thermophysical characteristics of the process of rice-husk pyrolysis in nonreactive and oxidizing environment; structure and phase composition of products of the rice-husk pyrolysis in interval of temperatures 150 – 850 °С and high temperature pyrolysis in interval of temperatures 900 – 1 500 °С. There are defined the silicon-carbon production conditions, which meet the requirements applicable to charging materials at production of technical silicon and silicon carbide.

Photovoltaic characteristics of porous silicon /(n+ - p) silicon solar cells

International Nuclear Information System (INIS)

Dzhafarov, T.D.; Aslanov, S.S.; Ragimov, S.H.; Sadigov, M.S.; Nabiyeva, A.F.; Yuksel, Aydin S.

2012-01-01

Full text : The purpose of this work is to improve the photovoltaic parameters of the screen-printed silicon solar cells by formation the nano-porous silicon film on the frontal surface of the cell. The photovoltaic characteristics of two type silicon solar cells with and without porous silicon layer were measured and compared. A remarkable increment of short-circuit current density and the efficiency by 48 percent and 20 percent, respectively, have been achieved for PS/(n + - pSi) solar cell comparing to (n + - p)Si solar cell without PS layer

Drift mechanism of mass transfer on heterogeneous reaction in crystalline silicon substrate

Energy Technology Data Exchange (ETDEWEB)

Kukushkin, S.A. [Institute of Problems of Mechanical Engineering, Russian Academy of Science, St Petersburg, 199178 (Russian Federation); St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101 (Russian Federation); Osipov, A.V., E-mail: Andrey.V.Osipov@gmail.com [Institute of Problems of Mechanical Engineering, Russian Academy of Science, St Petersburg, 199178 (Russian Federation); St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101 (Russian Federation)

2017-05-01

This work aims to study the pressure dependence of the thickness of the epitaxial silicon carbide film growing from crystalline silicon due to the heterogeneous reaction with gaseous carbon monoxide. It turned out that this dependence exhibits the clear maximum. On further pressure increasing the film thickness decreases. The theoretical model has been developed which explains such a character of the dependence by the fact that the gaseous silicon monoxide reaction product inhibits the drift of the gaseous reagent through the channels of a crystal lattice, thus decreasing their hydraulic diameter. In the proposed hydraulic model, the dependences of the film thickness both on the gas pressure and time have been calculated. It was shown that not only the qualitative but also quantitative correspondence between theoretical and experimental results takes place. As one would expect, due to the Einstein relation, at short growth times the drift model coincides with the diffusion one. Consequences of this drift mechanism of epitaxial film growing are discussed. - Graphical abstract: This work aims to study the pressure dependence of the thickness of the epitaxial silicon carbide film growing from crystalline silicon due to the heterogeneous reaction with gaseous carbon monoxide. It turned out that this dependence exhibits the clear maximum. On further pressure increasing the film thickness decreases. The theoretical model has been developed which explains such a character of the dependence by the fact that the gaseous silicon monoxide reaction product inhibits the drift of the gaseous reagent through the channels of a crystal lattice, thus decreasing their hydraulic diameter. - Highlights: • It is established that the greater pressure, the smaller is the reaction rate. • The reaction product prevents penetration of the reagent into a reaction zone. • For description the hydraulic model of crystal lattice channels is developed. • Theoretical results for polytropic

Performance improvement of silicon solar cells by nanoporous silicon coating

Directory of Open Access Journals (Sweden)

Dzhafarov T. D.

2012-04-01

Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

Ice sheet hydrology - a review

International Nuclear Information System (INIS)

Jansson, Peter; Naeslund, Jens-Ove; Rodhe, Lars

2007-03-01

This report summarizes the theoretical knowledge on water flow in and beneath glaciers and ice sheets and how these theories are applied in models to simulate the hydrology of ice sheets. The purpose is to present the state of knowledge and, perhaps more importantly, identify the gaps in our understanding of ice sheet hydrology. Many general concepts in hydrology and hydraulics are applicable to water flow in glaciers. However, the unique situation of having the liquid phase flowing in conduits of the solid phase of the same material, water, is not a commonly occurring phenomena. This situation means that the heat exchange between the phases and the resulting phase changes also have to be accounted for in the analysis. The fact that the solidus in the pressure-temperature dependent phase diagram of water has a negative slope provides further complications. Ice can thus melt or freeze from both temperature and pressure variations or variations in both. In order to provide details of the current understanding of water flow in conjunction with deforming ice and to provide understanding for the development of ideas and models, emphasis has been put on the mathematical treatments, which are reproduced in detail. Qualitative results corroborating theory or, perhaps more often, questioning the simplifications made in theory, are also given. The overarching problem with our knowledge of glacier hydrology is the gap between the local theories of processes and the general flow of water in glaciers and ice sheets. Water is often channelized in non-stationary conduits through the ice, features which due to their minute size relative to the size of glaciers and ice sheets are difficult to incorporate in spatially larger models. Since the dynamic response of ice sheets to global warming is becoming a key issue in, e.g. sea-level change studies, the problems of the coupling between the hydrology of an ice sheet and its dynamics is steadily gaining interest. New work is emerging

Ice sheet hydrology - a review

Energy Technology Data Exchange (ETDEWEB)

Jansson, Peter; Naeslund, Jens-Ove [Dept. of Physical Geography and Quaternary Geology, Stockholm Univ., Stockholm (Sweden); Rodhe, Lars [Geological Survey of Sweden, Uppsala (Sweden)

2007-03-15

This report summarizes the theoretical knowledge on water flow in and beneath glaciers and ice sheets and how these theories are applied in models to simulate the hydrology of ice sheets. The purpose is to present the state of knowledge and, perhaps more importantly, identify the gaps in our understanding of ice sheet hydrology. Many general concepts in hydrology and hydraulics are applicable to water flow in glaciers. However, the unique situation of having the liquid phase flowing in conduits of the solid phase of the same material, water, is not a commonly occurring phenomena. This situation means that the heat exchange between the phases and the resulting phase changes also have to be accounted for in the analysis. The fact that the solidus in the pressure-temperature dependent phase diagram of water has a negative slope provides further complications. Ice can thus melt or freeze from both temperature and pressure variations or variations in both. In order to provide details of the current understanding of water flow in conjunction with deforming ice and to provide understanding for the development of ideas and models, emphasis has been put on the mathematical treatments, which are reproduced in detail. Qualitative results corroborating theory or, perhaps more often, questioning the simplifications made in theory, are also given. The overarching problem with our knowledge of glacier hydrology is the gap between the local theories of processes and the general flow of water in glaciers and ice sheets. Water is often channelized in non-stationary conduits through the ice, features which due to their minute size relative to the size of glaciers and ice sheets are difficult to incorporate in spatially larger models. Since the dynamic response of ice sheets to global warming is becoming a key issue in, e.g. sea-level change studies, the problems of the coupling between the hydrology of an ice sheet and its dynamics is steadily gaining interest. New work is emerging

Disintegration of liquid sheets

Science.gov (United States)

Mansour, Adel; Chigier, Norman

1990-01-01

The development, stability, and disintegration of liquid sheets issuing from a two-dimensional air-assisted nozzle is studied. Detailed measurements of mean drop size and velocity are made using a phase Doppler particle analyzer. Without air flow the liquid sheet converges toward the axis as a result of surface tension forces. With airflow a quasi-two-dimensional expanding spray is formed. The air flow causes small variations in sheet thickness to develop into major disturbances with the result that disruption starts before the formation of the main break-up region. In the two-dimensional variable geometry air-blast atomizer, it is shown that the air flow is responsible for the formation of large, ordered, and small chaotic 'cell' structures.

Root-growth-inhibiting sheet

Science.gov (United States)

Burton, F.G.; Cataldo, D.A.; Cline, J.F.; Skiens, W.E.; Van Voris, P.

1993-01-26

In accordance with this invention, a porous sheet material is provided at intervals with bodies of a polymer which contain a 2,6-dinitroaniline. The sheet material is made porous to permit free passage of water. It may be either a perforated sheet or a woven or non-woven textile material. A particularly desirable embodiment is a non-woven fabric of non-biodegradable material. This type of material is known as a geotextile'' and is used for weed control, prevention of erosion on slopes, and other landscaping purposes. In order to obtain a root repelling property, a dinitroaniline is blended with a polymer which is attached to the geotextile or other porous material.

Root-growth-inhibiting sheet

Science.gov (United States)

Burton, Frederick G.; Cataldo, Dominic A.; Cline, John F.; Skiens, W. Eugene; Van Voris, Peter

1993-01-01

In accordance with this invention, a porous sheet material is provided at intervals with bodies of a polymer which contain a 2,6-dinitroaniline. The sheet material is made porous to permit free passage of water. It may be either a perforated sheet or a woven or non-woven textile material. A particularly desirable embodiment is a non-woven fabric of non-biodegradable material. This type of material is known as a "geotextile" and is used for weed control, prevention of erosion on slopes, and other landscaping purposes. In order to obtain a root repelling property, a dinitroaniline is blended with a polymer which is attached to the geotextile or other porous material.

Laser Process for Selective Emitter Silicon Solar Cells

Directory of Open Access Journals (Sweden)

G. Poulain

2012-01-01

Full Text Available Selective emitter solar cells can provide a significant increase in conversion efficiency. However current approaches need many technological steps and alignment procedures. This paper reports on a preliminary attempt to reduce the number of processing steps and therefore the cost of selective emitter cells. In the developed procedure, a phosphorous glass covered with silicon nitride acts as the doping source. A laser is used to open locally the antireflection coating and at the same time achieve local phosphorus diffusion. In this process the standard chemical etching of the phosphorous glass is avoided. Sheet resistance variation from 100 Ω/sq to 40 Ω/sq is demonstrated with a nanosecond UV laser. Numerical simulation of the laser-matter interaction is discussed to understand the dopant diffusion efficiency. Preliminary solar cells results show a 0.5% improvement compared with a homogeneous emitter structure.

Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

International Nuclear Information System (INIS)

Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

2012-01-01

In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

Mobility Balance Sheet 2009

International Nuclear Information System (INIS)

Jorritsma, P.; Derriks, H.; Francke, J.; Gordijn, H.; Groot, W.; Harms, L.; Van der Loop, H.; Peer, S.; Savelberg, F.; Wouters, P.

2009-06-01

The Mobility Balance Sheet provides an overview of the state of the art of mobility in the Netherlands. In addition to describing the development of mobility this report also provides explanations for the growth of passenger and freight transport. Moreover, the Mobility Balance Sheet also focuses on a topical theme: the effects of economic crises on mobility. [nl

Estimation of Future Demand for Neutron-Transmutation-Doped Silicon Caused by Development of Hybrid Electric Vehicle

International Nuclear Information System (INIS)

Kim, Myong Seop; Park, Sang Jun

2008-01-01

By using this doping method, silicon semiconductors with an extremely uniform dopant distribution can be produced. They are usually used for high power devices such as thyristor (SCR), IGBT, IGCT and GTO. Now, the demand for high power semiconductor devices has increased rapidly due to the rapid increase of the green energy technologies. Among them, the productions of hybrid cars or fuel cell engines are excessively increased to reduce the amount of discharged air pollution substances, such as carbon dioxide which causes global warming. It is known that the neutron-transmutation-doped floating-zone (FZ) silicon wafers are used in insulated-gate bipolar transistors (IGBTs) which control the speed of the electric traction motors equipped in hybrid or fuel cell vehicles. Therefore, inevitably, it can be supposed that the demand of the NTD silicon is considerably increased. However, it is considered likely that the irradiation capacity will not be large enough to meet the increasing demand. After all, the large irradiation capacity for NTD such as a reactor dedicated to the silicon irradiation will be constructed depending on the industrial demand for NTD silicon. In this work, we investigated the relationship between the hybrid electric vehicle (HEV) industry and the NTD silicon production. Also, we surveyed the prospect for the production of the HEV. Then, we deduced the worldwide demand for the NTD silicon associated with the HEV production. This work can be utilized as the basic material for the construction of the new irradiation facility such as NTD-dedicated neutron source

Safety advice sheets

CERN Multimedia

HSE Unit

2013-01-01

You never know when you might be faced with questions such as: when/how should I dispose of a gas canister? Where can I find an inspection report? How should I handle/store/dispose of a chemical substance…?   The SI section of the DGS/SEE Group is primarily responsible for safety inspections, evaluating the safety conditions of equipment items, premises and facilities. On top of this core task, it also regularly issues “Safety Advice Sheets” on various topics, designed to be of assistance to users but also to recall and reinforce safety rules and procedures. These clear and concise sheets, complete with illustrations, are easy to display in the appropriate areas. The following safety advice sheets have been issued so far: Other sheets will be published shortly. Suggestions are welcome and should be sent to the SI section of the DGS/SEE Group. Please send enquiries to general-safety-visits.service@cern.ch.

Manifold free multiple sheet superplastic forming

Science.gov (United States)

Elmer, John W.; Bridges, Robert L.

2004-01-13

Fluid-forming compositions in a container attached to enclosed adjacent sheets are heated to relatively high temperatures to generate fluids (gases) that effect inflation of the sheets. Fluid rates to the enclosed space between the sheets can be regulated by the canal from the container. Inflated articles can be produced by a continuous, rather than batch-type, process.

21 CFR 880.5180 - Burn sheet.

Science.gov (United States)

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Burn sheet. 880.5180 Section 880.5180 Food and... Burn sheet. (a) Identification. A burn sheet is a device made of a porous material that is wrapped aroung a burn victim to retain body heat, to absorb wound exudate, and to serve as a barrier against...

Sheet-bulk metal forming – forming of functional components from sheet metals

Directory of Open Access Journals (Sweden)

Merklein Marion

2015-01-01

Full Text Available The paper gives an overview on the application of sheet-bulk metal forming operations in both scientific and industrial environment. Beginning with the need for an innovative forming technology, the definition of this new process class is introduced. The rising challenges of the application of bulk metal forming operations on sheet metals are presented and the demand on a holistic investigation of this topic is motivated. With the help of examples from established production processes, the latest state of technology and the lack on fundamental knowledge is shown. Furthermore, perspectives regarding new research topics within sheet-bulk metal forming are presented. These focus on processing strategies to improve the quality of functional components by the application of process-adapted semi-finished products as well as the local adaption of the tribological system.

Release of low molecular weight silicones and platinum from silicone breast implants.

Science.gov (United States)

Lykissa, E D; Kala, S V; Hurley, J B; Lebovitz, R M

1997-12-01

We have conducted a series of studies addressing the chemical composition of silicone gels from breast implants as well as the diffusion of low molecular weight silicones (LM-silicones) and heavy metals from intact implants into various surrounding media, namely, lipid-rich medium (soy oil), aqueous tissue culture medium (modified Dulbecco's medium, DMEM), or an emulsion consisting of DMEM plus 10% soy oil. LM-silicones in both implants and surrounding media were detected and quantitated using gas chromatography (GC) coupled with atomic emission (GC-AED) as well as mass spectrometric (GC/MS) detectors, which can detect silicones in the nanogram range. Platinum, a catalyst used in the preparation of silicone gels, was detected and quantitated using inductive argon-coupled plasma/mass spectrometry (ICP-MS), which can detect platinum in the parts per trillion range. Our results indicate that GC-detectable low molecular weight silicones contribute approximately 1-2% to the total gel mass and consist predominantly of cyclic and linear poly-(dimethylsiloxanes) ranging from 3 to 20 siloxane [(CH3)2-Si-O] units (molecular weight 200-1500). Platinum can be detected in implant gels at levels of approximately 700 micrograms/kg by ICP-MS. The major component of implant gels appears to be high molecular weight silicone polymers (HM-silicones) too large to be detected by GC. However, these HM-silicones can be converted almost quantitatively (80% by mass) to LM-silicones by heating implant gels at 150-180 degrees C for several hours. We also studied the rates at which LM-silicones and platinum leak through the intact implant outer shell into the surrounding media under a variety of conditions. Leakage of silicones was greatest when the surrounding medium was lipid-rich, and up to 10 mg/day LM-silicones was observed to diffuse into a lipid-rich medium per 250 g of implant at 37 degrees C. This rate of leakage was maintained over a 7-day experimental period. Similarly, platinum was

Reconstructing the last Irish Ice Sheet 2: a geomorphologically-driven model of ice sheet growth, retreat and dynamics

Science.gov (United States)

Greenwood, Sarah L.; Clark, Chris D.

2009-12-01

The ice sheet that once covered Ireland has a long history of investigation. Much prior work focussed on localised evidence-based reconstructions and ice-marginal dynamics and chronologies, with less attention paid to an ice sheet wide view of the first order properties of the ice sheet: centres of mass, ice divide structure, ice flow geometry and behaviour and changes thereof. In this paper we focus on the latter aspect and use our new, countrywide glacial geomorphological mapping of the Irish landscape (>39 000 landforms), and our analysis of the palaeo-glaciological significance of observed landform assemblages (article Part 1), to build an ice sheet reconstruction yielding these fundamental ice sheet properties. We present a seven stage model of ice sheet evolution, from initiation to demise, in the form of palaeo-geographic maps. An early incursion of ice from Scotland likely coalesced with local ice caps and spread in a south-westerly direction 200 km across Ireland. A semi-independent Irish Ice Sheet was then established during ice sheet growth, with a branching ice divide structure whose main axis migrated up to 140 km from the west coast towards the east. Ice stream systems converging on Donegal Bay in the west and funnelling through the North Channel and Irish Sea Basin in the east emerge as major flow components of the maximum stages of glaciation. Ice cover is reconstructed as extending to the continental shelf break. The Irish Ice Sheet became autonomous (i.e. separate from the British Ice Sheet) during deglaciation and fragmented into multiple ice masses, each decaying towards the west. Final sites of demise were likely over the mountains of Donegal, Leitrim and Connemara. Patterns of growth and decay of the ice sheet are shown to be radically different: asynchronous and asymmetric in both spatial and temporal domains. We implicate collapse of the ice stream system in the North Channel - Irish Sea Basin in driving such asymmetry, since rapid

Pre-LGM Northern Hemisphere ice sheet topography

Directory of Open Access Journals (Sweden)

J. Kleman

2013-10-01

Full Text Available We here reconstruct the paleotopography of Northern Hemisphere ice sheets during the glacial maxima of marine isotope stages (MIS 5b and 4.We employ a combined approach, blending geologically based reconstruction and numerical modeling, to arrive at probable ice sheet extents and topographies for each of these two time slices. For a physically based 3-D calculation based on geologically derived 2-D constraints, we use the University of Maine Ice Sheet Model (UMISM to calculate ice sheet thickness and topography. The approach and ice sheet modeling strategy is designed to provide robust data sets of sufficient resolution for atmospheric circulation experiments for these previously elusive time periods. Two tunable parameters, a temperature scaling function applied to a spliced Vostok–GRIP record, and spatial adjustment of the climatic pole position, were employed iteratively to achieve a good fit to geological constraints where such were available. The model credibly reproduces the first-order pattern of size and location of geologically indicated ice sheets during marine isotope stages (MIS 5b (86.2 kyr model age and 4 (64 kyr model age. From the interglacial state of two north–south obstacles to atmospheric circulation (Rocky Mountains and Greenland, by MIS 5b the emergence of combined Quebec–central Arctic and Scandinavian–Barents-Kara ice sheets had increased the number of such highland obstacles to four. The number of major ice sheets remained constant through MIS 4, but the merging of the Cordilleran and the proto-Laurentide Ice Sheet produced a single continent-wide North American ice sheet at the LGM.

Light emitting structures porous silicon-silicon substrate

International Nuclear Information System (INIS)

Monastyrskii, L.S.; Olenych, I.B.; Panasjuk, M.R.; Savchyn, V.P.

1999-01-01

The research of spectroscopic properties of porous silicon has been done. Complex of photoluminescence, electroluminescence, cathodoluminescence, thermostimulated depolarisation current analyte methods have been applied to study of geterostructures and free layers of porous silicon. Light emitting processes had tendency to decrease. The character of decay for all kinds of luminescence were different

Transport in silicon-germanium heterostructures

International Nuclear Information System (INIS)

Chrastina, Daniel

2001-01-01

The work presented here describes the electrical characterization of n- and p-type strained silicon-germanium systems. Theories of quantum transport m low magnetic fields at low temperature are discussed m terms of weak-localization: the traditional theory is shown not to account for the dephasing in a 2-dimensional hole gas behaving in a metallic manner and emergent alternative theories, while promising, require refinement. The mobility as a function of sheet density is measured in a p-type pseudomorphic Si 0.5 Ge 0.5 across the temperature range 350mK-282K; it is shown that calculations of the mobility based on semi-classical scattering mechanisms fail below 10K where quantum transport effects become relevant. A room temperature Hall scattering factor has been extracted. A new functional form has been presented to fit the resistivity as a function of temperature, below 20K: traditional theories of screening and weak localization appear not to be applicable. It is also demonstrated that simple protection circuitry is essential if commercial-scale devices are to be meaningfully investigated. Mobility spectrum analysis is performed on an n-type strained-silicon device. Established analysis methods are discussed and a new method is presented based on the Bryan's Algorithm approach to maximum entropy. The breakdown of the QHE is also investigated: the critical current density compares well to that predicted by an existing theory. Finally, devices in which both electron and hole gases can be induced are investigated. However, it is shown that the two cannier species never co-exist. Design rules are presented which may allow more successful structures to be created. Results are presented which demonstrate the success and the utility of implanted contacts which selectively reach different regions of the structure. (author)

Research on Al-alloy sheet forming formability during warm/hot sheet hydroforming based on elliptical warm bulging test

Science.gov (United States)

Cai, Gaoshen; Wu, Chuanyu; Gao, Zepu; Lang, Lihui; Alexandrov, Sergei

2018-05-01

An elliptical warm/hot sheet bulging test under different temperatures and pressure rates was carried out to predict Al-alloy sheet forming limit during warm/hot sheet hydroforming. Using relevant formulas of ultimate strain to calculate and dispose experimental data, forming limit curves (FLCS) in tension-tension state of strain (TTSS) area are obtained. Combining with the basic experimental data obtained by uniaxial tensile test under the equivalent condition with bulging test, complete forming limit diagrams (FLDS) of Al-alloy are established. Using a quadratic polynomial curve fitting method, material constants of fitting function are calculated and a prediction model equation for sheet metal forming limit is established, by which the corresponding forming limit curves in TTSS area can be obtained. The bulging test and fitting results indicated that the sheet metal FLCS obtained were very accurate. Also, the model equation can be used to instruct warm/hot sheet bulging test.

Gelcasting of SiC/Si for preparation of silicon nitride bonded silicon carbide

International Nuclear Information System (INIS)

Xie, Z.P.; Tsinghua University, Beijing,; Cheng, Y.B.; Lu, J.W.; Huang, Y.

2000-01-01

In the present paper, gelcasting of aqueous slurry with coarse silicon carbide(1mm) and fine silicon particles was investigated to fabricate silicon nitride bonded silicon carbide materials. Through the examination of influence of different polyelectrolytes on the Zeta potential and viscosity of silicon and silicon carbide suspensions, a stable SiC/Si suspension with 60 vol% solid loading could be prepared by using polyelectrolyte of D3005 and sodium alginate. Gelation of this suspension can complete in 10-30 min at 60-80 deg C after cast into mold. After demolded, the wet green body can be dried directly in furnace and the green strength will develop during drying. Complex shape parts with near net size were prepared by the process. Effects of the debindering process on nitridation and density of silicon nitride bonded silicon carbide were also examined. Copyright (2000) The Australian Ceramic Society

Ultra-high Q terahertz whispering-gallery modes in a silicon resonator

Science.gov (United States)

Vogt, Dominik Walter; Leonhardt, Rainer

2018-05-01

We report on the first experimental demonstration of terahertz (THz) whispering-gallery modes (WGMs) with an ultra-high quality factor of 1.5 × 104 at 0.62 THz. The WGMs are observed in a high resistivity float zone silicon spherical resonator coupled to a sub-wavelength silica waveguide. A detailed analysis of the coherent continuous wave THz spectroscopy measurements combined with a numerical model based on Mie-Debye-Aden-Kerker theory allows us to unambiguously identify the observed higher order radial THz WGMs.

Silicon detectors

International Nuclear Information System (INIS)

Klanner, R.

1984-08-01

The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

FTIR studies of swift silicon and oxygen ion irradiated porous silicon

International Nuclear Information System (INIS)

Bhave, Tejashree M.; Hullavarad, S.S.; Bhoraskar, S.V.; Hegde, S.G.; Kanjilal, D.

1999-01-01

Fourier Transform Infrared Spectroscopy has been used to study the bond restructuring in silicon and oxygen irradiated porous silicon. Boron doped p-type (1 1 1) porous silicon was irradiated with 10 MeV silicon and a 14 MeV oxygen ions at different doses ranging between 10 12 and 10 14 ions cm -2 . The yield of PL in porous silicon irradiated samples was observed to increase considerably while in oxygen irradiated samples it was seen to improve only by a small extent for lower doses whereas it decreased for higher doses. The results were interpreted in view of the relative intensities of the absorption peaks associated with O-Si-H and Si-H stretch bonds

On Jovian plasma sheet structure

International Nuclear Information System (INIS)

Khurana, K.K.; Kivelson, M.G.

1989-01-01

The authors evaluate several models of Jovian plasma sheet structure by determining how well they organize several aspects of the observed Voyager 2 magnetic field characteristics as a function of Jovicentric radial distance. It is shown that in the local time sector of the Voyager 2 outbound pass (near 0300 LT) the published hinged-magnetodisc models with wave (i.e., models corrected for finite wave velocity effects) are more successful than the published magnetic anomaly model in predicting locations of current sheet crossings. They also consider the boundary between the plasma sheet and the magnetotail lobe which is expected to vary slowly with radial distance. They use this boundary location as a further test of the models of the magnetotail. They show that the compressional MHD waves have much smaller amplitude in the lobes than in the plasma sheet and use this criterion to refine the identification of the plasma-sheet-lobe boundary. When the locations of crossings into and out of the lobes are examined, it becomes evident that the magnetic-anomaly model yields a flaring plasma sheet with a halfwidth of ∼ 3 R J at a radial distance of 20 R J and ∼ 12 R J at a radial distance of 100 R J . The hinged-magnetodisc models with wave, on the other hand, predict a halfwidth of ∼ 3.5 R J independent of distance beyond 20 R J . New optimized versions of the two models locate both the current sheet crossings and lobe encounters equally successfully. The optimized hinged-magnetodisc model suggests that the wave velocity decreases with increasing radial distance. The optimized magnetic anomaly model yields lower velocity contrast than the model of Vasyliunas and Dessler (1981)

Rubella - Fact Sheet for Parents

Science.gov (United States)

... and 4 through 6 years Fact Sheet for Parents Color [2 pages] Español: Rubéola The best way ... according to the recommended schedule. Fact Sheets for Parents Diseases and the Vaccines that Prevent Them Chickenpox ...

Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD

International Nuclear Information System (INIS)

Chao, D.S.; Liang, J.H.

2013-01-01

Recently, light emission from silicon nanostructures has gained great interest due to its promising potential of realizing silicon-based optoelectronic applications. In this study, luminescent silicon nanocrystals (Si–NCs) were in situ synthesized in silicon-rich silicon nitride (SRSN) films grown by plasma-enhanced chemical vapor deposition (PECVD). SRSN films with various excess silicon contents were deposited by adjusting SiH 4 flow rate to 100 and 200 sccm and keeping NH 3 one at 40 sccm, and followed by furnace annealing (FA) treatments at 600, 850 and 1100 °C for 1 h. The effects of excess silicon content and post-annealing temperature on optical properties of Si–NCs were investigated by photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR). The origins of two groups of PL peaks found in this study can be attributed to defect-related interface states and quantum confinement effects (QCE). Defect-related interface states lead to the photon energy levels almost kept constant at about 3.4 eV, while QCE results in visible and tunable PL emission in the spectral range of yellow and blue light which depends on excess silicon content and post-annealing temperature. In addition, PL intensity was also demonstrated to be highly correlative to the excess silicon content and post-annealing temperature due to its corresponding effects on size, density, crystallinity, and surface passivation of Si–NCs. Considering the trade-off between surface passivation and structural properties of Si–NCs, an optimal post-annealing temperature of 600 °C was suggested to maximize the PL intensity of the SRSN films

The influence of assist gas on magnetic properties of electrotechnical steel sheets cut with laser

International Nuclear Information System (INIS)

Gaworska-Koniarek, Dominika; Szubzda, Bronislaw; Wilczynski, Wieslaw; Drosik, Jerzy; Karas, Kazimierz

2011-01-01

The paper presents the influence of assist gas (air and nitrogen) during laser cutting on magnetization, magnetic permeability and loss characteristics of non-oriented electrical steels. The research was made on an non-oriented M330-50A grade electrical steels by means of single sheet tester. In order to enhance the effect of cutting and the same degradation zone on magnetic properties, strips with different width were achieved. Measurements results indicate that application of air as assist gas has more destructive effect on magnetic properties of electrical steels than nitrogen one.

The influence of assist gas on magnetic properties of electrotechnical steel sheets cut with laser

Science.gov (United States)

Gaworska-Koniarek, Dominika; Szubzda, Bronisław; Wilczyński, Wiesław; Drosik, Jerzy; Karaś, Kazimierz

2011-07-01

The paper presents the influence of assist gas (air and nitrogen) during laser cutting on magnetization, magnetic permeability and loss characteristics of non-oriented electrical steels. The research was made on an non-oriented M330-50A grade electrical steels by means of single sheet tester. In order to enhance the effect of cutting and the same degradation zone on magnetic properties, strips with different width were achieved. Measurements results indicate that application of air as assist gas has more destructive effect on magnetic properties of electrical steels than nitrogen one.

Impurity segregation behavior in polycrystalline silicon ingot grown with variation of electron-beam power

Science.gov (United States)

Lee, Jun-Kyu; Lee, Jin-Seok; Jang, Bo-Yun; Kim, Joon-Soo; Ahn, Young-Soo; Cho, Churl-Hee

2014-08-01

Electron beam melting (EBM) systems have been used to improve the purity of metallurgical grade silicon feedstock for photovoltaic application. Our advanced EBM system is able to effectively remove volatile impurities using a heat source with high energy from an electron gun and to continuously allow impurities to segregate at the top of an ingot solidified in a directional solidification (DS) zone in a vacuum chamber. Heat in the silicon melt should move toward the ingot bottom for the desired DS. However, heat flux though the ingot is changed as the ingot becomes longer due to low thermal conductivity of silicon. This causes a non-uniform microstructure of the ingot, finally leading to impurity segregation at its middle. In this research, EB power irradiated on the silicon melt was controlled during the ingot growth in order to suppress the change of heat flux. EB power was reduced from 12 to 6.6 kW during the growth period of 45 min with a drop rate of 0.125 kW/min. Also, the silicon ingot was grown under a constant EB power of 12 kW to estimate the effect of the drop rate of EB power. When the EB power was reduced, the grains with columnar shape were much larger at the middle of the ingot compared to the case of constant EB power. Also, the present research reports a possible reason for the improvement of ingot purity by considering heat flux behaviors.

Cell sheet technology and cell patterning for biofabrication

Energy Technology Data Exchange (ETDEWEB)

Hannachi, Imen Elloumi; Yamato, Masayuki; Okano, Teruo [Institute of Advanced Biomedical Engineering and Science, Tokyo Women' s Medical University, 8-1 Kawada-cho, Shinjuku, Tokyo (Japan)

2009-06-01

We have developed cell sheet technology as a modern method for the fabrication of functional tissue-like and organ-like structures. This technology allows for a sheet of interconnected cells and cells in full contact with their natural extracellular environment to be obtained. A cell sheet can be patterned and composed according to more than one cell type. The key technology of cell sheet engineering is that a fabricated cell sheet can be harvested and transplanted utilizing temperature-responsive surfaces. In this review, we summarize different aspects of cell sheet engineering and provide a survey of the application of cell sheets as a suitable material for biofabrication and clinics. Moreover, since cell micropatterning is a key tool for cell sheet engineering, in this review we focus on the introduction of our approaches to cell micropatterning and cell co-culture to the principles of automation and how they can be subjected to easy robotics programming. Finally, efforts towards making cell sheet technology suitable for biofabrication and robotic biofabrication are also summarized. (topical review)

Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

Czech Academy of Sciences Publication Activity Database

Seif, J.; Descoeudres, A.; Nogay, G.; Hänni, S.; de Nicolas, S.M.; Holm, N.; Geissbühler, J.; Hessler-Wyser, A.; Duchamp, M.; Dunin-Borkowski, R.E.; Ledinský, Martin; De Wolf, S.; Ballif, C.

2016-01-01

Roč. 6, č. 5 (2016), s. 1132-1140 ISSN 2156-3381 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * nanocrystalline silicon * silicon heterojunctions (SHJs) * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.712, year: 2016

Periodically poled silicon

Science.gov (United States)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

2010-02-01

Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

Process model for carbothermic production of silicon metal

Energy Technology Data Exchange (ETDEWEB)

Andresen, B.

1995-09-12

This thesis discusses an advanced dynamical two-dimensional cylinder symmetric model for the high temperature part of the carbothermic silicon metal process, and its computer encoding. The situation close to that which is believed to exist around one of three electrodes in full-scale industrial furnaces is modelled. This area comprises a gas filled cavity surrounding the lower tip of the electrode, the metal pool underneath and the lower parts of the materials above. The most important phenomena included are: Heterogeneous chemical reactions taking place in the high-temperature zone (above 1860 {sup o}C), Evaporation and condensation of silicon, Transport of materials by dripping, Turbulent or laminar fluid flow, DC electric arcs, Heat transport by convection, conduction and radiation. The results from the calculations, such as production rates, gas- and temperature distributions, furnace- and particle geometries, fluid flow fields etc, are presented graphically. In its present state the model is a prototype. The process is very complex, and the calculations are time consuming. The governing equations are coded into a Fortran 77 computer code applying the commercial 3D code FLUENT as a basis. 64 refs., 110 figs., 11 tabs.

Efficiency Enhancement of Silicon Solar Cells by Porous Silicon Technology

Directory of Open Access Journals (Sweden)

Eugenijus SHATKOVSKIS

2012-09-01

Full Text Available Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14 mA/cm2, etching time was set in the interval of (10 ÷ 20 s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850 nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.DOI: http://dx.doi.org/10.5755/j01.ms.18.3.2428

Two orders of magnitude reduction in silicon membrane thermal conductivity by resonance hybridizations

Science.gov (United States)

Honarvar, Hossein; Hussein, Mahmoud I.

2018-05-01

The thermal conductivity of a freestanding single-crystal silicon membrane may be reduced significantly by attaching nanoscale pillars on one or both surfaces. Atomic resonances of the nanopillars form vibrons that intrinsically couple with the base membrane phonons causing mode hybridization and flattening at each coupling location in the phonon band structure. This in turn causes group velocity reductions of existing phonons, in addition to introducing new modes that get excited but are localized and do not transport energy. The nanopillars also reduce the phonon lifetimes at and around the hybridization zones. These three effects, which in principle may be tuned to take place across silicon's full spectrum, lead to a lowering of the in-plane thermal conductivity in the base membrane. Using equilibrium molecular dynamics simulations, and utilizing the concept of vibrons compensation, we report a staggering two orders of magnitude reduction in the thermal conductivity at room temperature by this mechanism. Specifically, a reduction of a factor of 130 is demonstrated for a roughly 10-nm-thick pillared membrane compared to a corresponding unpillared membrane. This amounts to a record reduction of a factor of 481 compared to bulk crystalline silicon and nearly a factor of 2 compared to bulk amorphous silicon. These results are obtained while providing a path for preserving performance with upscaling.

Chiral silicon nanostructures

International Nuclear Information System (INIS)

Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

2006-01-01

Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

Energy information sheets

Energy Technology Data Exchange (ETDEWEB)

1993-12-02

The National Energy Information Center (NEIC), as part of its mission, provides energy information and referral assistance to Federal, State, and local governments, the academic community, business and industrial organizations, and the general public. Written for the general public, the EIA publication Energy Information Sheets was developed to provide information on various aspects of fuel production, prices, consumption and capability. The information contained herein pertains to energy data as of December 1991. Additional information on related subject matter can be found in other EIA publications as referenced at the end of each sheet.

Estimates of Ice Sheet Mass Balance from Satellite Altimetry: Past and Future

Science.gov (United States)

Zwally, H. Jay; Zukor, Dorothy J. (Technical Monitor)

2001-01-01

A major uncertainty in predicting sea level rise is the sensitivity of ice sheet mass balance to climate change, as well as the uncertainty in present mass balance. Since the annual water exchange is about 8 mm of global sea level equivalent, the 20% uncertainty in current mass balance corresponds to 1.6 mm/yr in sea level change. Furthermore, estimates of the sensitivity of the mass balance to temperature change range from perhaps as much as - 10% to + 10% per K. A principal purpose of obtaining ice sheet elevation changes from satellite altimetry has been estimation of the current ice sheet mass balance. Limited information on ice sheet elevation change and their implications about mass balance have been reported by several investigators from radar altimetry (Seasat, Geosat, ERS-1&2). Analysis of ERS-1&2 data over Greenland for 7 years from 1992 to 1999 shows mixed patterns of ice elevation increases and decreases that are significant in terms of regional-scale mass balances. Observed seasonal and interannual variations in ice surface elevation are larger than previously expected because of seasonal and interannUal variations in precipitation, melting, and firn compaction. In the accumulation zone, the variations in firn compaction are modeled as a function of temperature leaving variations in precipitation and the mass balance trend. Significant interannual variations in elevation in some locations, in particular the difference in trends from 1992 to 1995 compared to 1995 to 1999, can be explained by changes in precipitation over Greenland. Over the 7 years, trends in elevation are mostly positive at higher elevations and negative at lower elevations. In addition, trends for the winter seasons (from a trend analysis through the average winter elevations) are more positive than the corresponding trends for the summer. At lower elevations, the 7-year trends in some locations are strongly negative for summer and near zero or slightly positive for winter. These

Sequential purification and crystal growth for the production of low cost silicon substrates. Quarterly technical progress report No. 1, 15 September 1979-31 December 1979

Energy Technology Data Exchange (ETDEWEB)

Liaw, M.; Secco, F.; Ingle, B.; Down, D.

1980-02-01

Over the past several years, Motorola's Materials Technology Laboratory (MTL), has been conducting several projects with goals directed at the production of high quality low cost silicon crystals. One of the projects which is being investigated is the direct purification of MG-Si. A unique characteristic of the approach used by this project is the use of a crystal puller to perform both purification and crystal growth. Sequential steps of purification were taken. By the completion of this series of purification, the purified MG-Si melt will be further purified by impurity redistribution using ingot pulling. The final purified silicon will be in an ingot form of desired dimensions for slicing into silicon sheets. The sequential steps of purification include: (1) leaching of MG-Si charge, (2) phase separation, (3) reactive gas treatment, (4) liquid-liquid extraction (called Slagging), and (5) purification by redistribution of impurities using ingot pulling. Progress on items (1) and (2) is reported. (WHK)

The chemistry of silicon

CERN Document Server

Rochow, E G; Emeléus, H J; Nyholm, Ronald

1975-01-01

Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

Modeling the Alzheimer Abeta17-42 fibril architecture: tight intermolecular sheet-sheet association and intramolecular hydrated cavities.

Science.gov (United States)

Zheng, Jie; Jang, Hyunbum; Ma, Buyong; Tsai, Chung-Jun; Nussinov, Ruth

2007-11-01

We investigate Abeta(17-42) protofibril structures in solution using molecular dynamics simulations. Recently, NMR and computations modeled the Abeta protofibril as a longitudinal stack of U-shaped molecules, creating an in-parallel beta-sheet and loop spine. Here we study the molecular architecture of the fibril formed by spine-spine association. We model in-register intermolecular beta-sheet-beta-sheet associations and study the consequences of Alzheimer's mutations (E22G, E22Q, E22K, and M35A) on the organization. We assess the structural stability and association force of Abeta oligomers with different sheet-sheet interfaces. Double-layered oligomers associating through the C-terminal-C-terminal interface are energetically more favorable than those with the N-terminal-N-terminal interface, although both interfaces exhibit high structural stability. The C-terminal-C-terminal interface is essentially stabilized by hydrophobic and van der Waals (shape complementarity via M35-M35 contacts) intermolecular interactions, whereas the N-terminal-N-terminal interface is stabilized by hydrophobic and electrostatic interactions. Hence, shape complementarity, or the "steric zipper" motif plays an important role in amyloid formation. On the other hand, the intramolecular Abeta beta-strand-loop-beta-strand U-shaped motif creates a hydrophobic cavity with a diameter of 6-7 A, allowing water molecules and ions to conduct through. The hydrated hydrophobic cavities may allow optimization of the sheet association and constitute a typical feature of fibrils, in addition to the tight sheet-sheet association. Thus, we propose that Abeta fiber architecture consists of alternating layers of tight packing and hydrated cavities running along the fibrillar axis, which might be possibly detected by high-resolution imaging.

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

International Nuclear Information System (INIS)

Wang, Xiaojuan; Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli; Zhou, Jun; Zhang, Zengxing

2015-01-01

Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

Energy Technology Data Exchange (ETDEWEB)

Wang, Xiaojuan [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhou, Jun, E-mail: zhoujunzhou@tongji.edu.cn [Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhang, Zengxing, E-mail: zhangzx@tongji.edu.cn [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

2015-10-01

Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

Work of plastic deformation in local zone of crack apex

International Nuclear Information System (INIS)

Gol'tsev, V.Yu.; Matvienko, Yu.G.; Rivkin, E.Yu.

1981-01-01

For substantiating application of criteria of viscous fracture and deeoer understanding of this. process one should know strain distribution and energy consumption for plastic deformation in crack top zone. For this purpose plane samples of 300x70x1.5 mm dimension with central notch of 23, 36 and 46 mm length have been subjected to tensile testing. The samples have been cut out from sheet steel 1Kh18N9T perpendicularly to the rolling direction. It is shown that the suggested viscous fracture conception ensures general approach to the viscous and elastoplastic fracture based on the concept on specific work of plastic deformation in the localized zone νsub(l). The νsub(l) value characterizes maximum plastic material energy consumption and may serve as criterion of viscous material fracture parallel to the critical opening of the deltasub(c) crack top

Sheet pinch devices

International Nuclear Information System (INIS)

Anderson, O.A.; Baker, W.R.; Ise, J. Jr.; Kunkel, W.B.; Pyle, R.V.; Stone, J.M.

1958-01-01

Three types of sheet-like discharges are being studied at Berkeley. The first of these, which has been given the name 'Triax', consists of a cylindrical plasma sleeve contained between two coaxial conducting cylinders A theoretical analysis of the stability of the cylindrical sheet plasma predicts the existence of a 'sausage-mode' instability which is, however, expected to grow more slowly than in the case of the unstabilized linear pinch (by the ratio of the radial dimensions). The second pinch device employs a disk shaped discharge with radial current guided between flat metal plates, this configuration being identical to that of the flat hydromagnetic capacitor without external magnetic field. A significant feature of these configurations is the absence of a plasma edge, i.e., there are no regions of sharply curved magnetic field lines anywhere in these discharges. The importance of this fact for stability is not yet fully investigated theoretically. As a third configuration a rectangular, flat pinch tube has been constructed, and the behaviour of a flat plasma sheet with edges is being studied experimentally

Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

International Nuclear Information System (INIS)

Bhoraskar, V.N.

2001-01-01

The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

1994-10-01

The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

Silicon Isotopes of Marine Pore Water: Tracking the Destiny of Marine Biogenic Opal

Science.gov (United States)

Cassarino, L.; Hendry, K. R.

2017-12-01

Silicon isotopes (δ30Si) are a powerful tool for the studying of the past and present silicon cycles, which is closely linked to the carbon cycle. Siliceous phytoplankton, such as diatoms, as one of the major conveyors of carbon to marine sediments. δ30Si from fossil diatoms has been shown to represent past silicic acid (DSi) utilization in the photic zone, since the lighter isotope is preferentially incorporated in their skeleton, the frustule. This assumes that species in the sediments depict past blooms and that frustules are preserved in their initial state during burial. Here we present new silicon isotopes data of sea water and pore water of deep marine sediments from two contrasted environments, the Equatorial Atlantic and West Antarctic Peninsula. δ30Si and DSi concentration, of both sea water and pore water, are negatively correlated. Marine biogenic opal dissolution can be tracked using δ30Si signature of pore water as lighter signals and high DSi concentrations are associated with the biogenic silica. Our data enhances post depositional and diagenesis processes during burial with a clear highlight on the sediment water interface exchanges.

Hydrogen in amorphous silicon

International Nuclear Information System (INIS)

Peercy, P.S.

1980-01-01

The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

A convenient way of manufacturing silicon nanotubes on a silicon substrate

Energy Technology Data Exchange (ETDEWEB)

Zhang, Changchang; Cheng, Heming; Liu, Xiang, E-mail: liuxiang@ahut.edu.cn

2016-07-01

A convenient approach of preparing silicon nanotubes (SiNTs) on a silicon substrate is described in this work in detail. Firstly, a porous silicon (PSi) slice is prepared by a galvanic displacement reaction. Then it is put into aqueous solutions of 20% (w%) ammonium fluoride and 2.5 mM cobalt nitrate for a predetermined time. The cobalt ions are reduced and the resulted cobalt particles are deposited on the PSi slice. After the cobalt particles are removed with 5 M nitric acid a plenty of SiNTs come out and exhibit disorderly on the silicon substrate, which are illustrated by scanning electron microscopy (SEM). The compositions of the SiNTs are examined by energy-dispersive X-ray spectroscopy. Based on the SEM images, a suggested mechanism is put forward to explain the generation of the SiNTs on the PSi substrate. - Highlights: • A facile approach of preparing silicon nano tubes was invented. • The experimental results demonstrated the strong reducibility of Si-H{sub x} species. • It provided a new way of manufacturing silicon-contained hybrids.

Properties of iron-doped multicrystalline silicon grown by the float-zone technique

Energy Technology Data Exchange (ETDEWEB)

Ciszek, T.F.; Wang, T.H.; Ahrenkiel, R.K.; Matson, R. [National Renewable Energy Lab., Golden, CO (United States)

1996-05-01

Multicrystalline Fe-doped Si ingots were float-zoned from high-purity feed rods. Fe was introduced by pill-doping, which gives uniform impurity content for small segregation coefficients (k {approximately} 10{sup {minus}5} for Fe in Si). Fe concentrations were calculated from the initial weight of the Fe pill, the molten zone geomet and the growth parameters. Values in the range of 10{sup 12}-10{sup 16} atoms/cm{sup 3} were targeted. No additional electrically active dopants were introduced. Minority charge carrier lifetime (via YAG-laser-excited, 430-MHz ultra-high-frequency-coupled, photoconductive decay) was measured on the ingots, and wafers were cut to examine grain structure and electron-beam-induced current response of grain boundaries. Observed lifetimes decreased monotonically with increasing Fe content for similar grain sizes (from {approximately}10 {mu}s to 2 {mu}s for < 10{sup {minus}3} cm{sup 2} grains, from {approximately}30 {mu}s to 2 {mu}s for {approximately}5 x 10{sup {minus}3} cm{sup 2} grains, and from {approximately}300 {mu}s to 2 {mu}s for > 10{sup {minus}2} cm{sup 2} grains) as the Fe content increased to 1 {times} 10{sup 16} atoms/cm{sup 3}.

Thin-Sheet Inversion Modeling of Geomagnetic Deep Sounding Data Using MCMC Algorithm

Directory of Open Access Journals (Sweden)

Hendra Grandis

2013-01-01

Full Text Available The geomagnetic deep sounding (GDS method is one of electromagnetic (EM methods in geophysics that allows the estimation of the subsurface electrical conductivity distribution. This paper presents the inversion modeling of GDS data employing Markov Chain Monte Carlo (MCMC algorithm to evaluate the marginal posterior probability of the model parameters. We used thin-sheet model to represent quasi-3D conductivity variations in the heterogeneous subsurface. The algorithm was applied to invert field GDS data from the zone covering an area that spans from eastern margin of the Bohemian Massif to the West Carpathians in Europe. Conductivity anomalies obtained from this study confirm the well-known large-scale tectonic setting of the area.

Effect of Cell Sheet Manipulation Techniques on the Expression of Collagen Type II and Stress Fiber Formation in Human Chondrocyte Sheets.

Science.gov (United States)

Wongin, Sopita; Waikakul, Saranatra; Chotiyarnwong, Pojchong; Siriwatwechakul, Wanwipa; Viravaidya-Pasuwat, Kwanchanok

2018-03-01

Cell sheet technology is applied to human articular chondrocytes to construct a tissue-like structure as an alternative treatment for cartilage defect. The effect of a gelatin manipulator, as a cell sheet transfer system, on the quality of the chondrocyte sheets was investigated. The changes of important chondrogenic markers and stress fibers, resulting from the cell sheet manipulation, were also studied. The chondrocyte cell sheets were constructed with patient-derived chondrocytes using a temperature-responsive polymer and a gelatin manipulator as a transfer carrier. The properties of the cell sheets, including sizes, expression levels of collagen type II and I, and the localization of the stress fibers, were assessed and compared with those of the cell sheets harvested without the gelatin manipulator. Using the gelatin manipulator, the original size of the chondrocyte cell sheets was retained with abundant stress fibers, but with a decrease in the expression of collagen type II. Without the gelatin manipulator, although the cell shrinkage occurred, the cell sheet with suppressed stress fiber formation showed significantly higher levels of collagen type II. These results support our observations that stress fiber formation in chondrocyte cell sheets affected the production of chondrogenic markers. These densely packed tissue-like structures possessed a good chondrogenic activity, indicating their potential for use in autologous chondrocyte implantation to treat cartilage defects.

Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

Science.gov (United States)

Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

2018-01-01

The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short

21st century changes in the surface mass balance of the Greenland ice sheet simulated with the global model CESM

Science.gov (United States)

Vizcaíno, M.; Lipscomb, W. H.; Van den Broeke, M.

2012-04-01

We present here the first projections of 21st century surface mass balance change of the Greenland ice sheet simulated with the Community Earth System Model (CESM). CESM is a fully-coupled, global climate model developed at many research centers and universities, primarily in the U.S. The model calculates the surface mass balance in the land component (the Community Land Model, CLM), at the same resolution as the atmosphere (1 degree), with an energy-balance scheme. The snow physics included in CLM for non-glaciated surfaces (SNiCAR model, Flanner and Zender, 2005) are used over the ice sheet. The surface mass balance is calculated for 10 elevation classes, and then downscaled to the grid of the ice sheet model (5 km in this case) via vertical linear interpolation between elevation classes combined with horizontal bilinear interpolation. The ice sheet topography is fixed at present-day values for the simulations presented here. The use of elevation classes reduces computational costs while giving results that reproduce well the mass balance gradients at the steep margins of the ice sheet. The simulated present-day surface mass balance agrees well with results from regional models. We focus on the regional model RACMO (Ettema et al. 2009) to compare the results on 20th-century surface mass balance evolution and two-dimensional patterns. The surface mass balance of the ice sheet under RCP8.5. forcing becomes negative in the last decades of the 21st century. The equilibrium line becomes ~500 m higher on average. Accumulation changes are positive in the accumulation zone. We examine changes in refreezing, accumulation, albedo, surface fluxes, and the timing of the melt season.

Settlement during vibratory sheet piling

NARCIS (Netherlands)

Meijers, P.

2007-01-01

During vibratory sheet piling quite often the soil near the sheet pile wall will settle. In many cases this is not a problem. For situations with houses, pipelines, roads or railroads at relative short distance these settlements may not be acceptable. The purpose of the research described in this

Positron annihilation lifetime in float-zone n-type silicon irradiated by fast electrons: a thermally stable vacancy defect

International Nuclear Information System (INIS)

Arutyunov, Nikolay; Emtsev, Vadim; Oganesyan, Gagik; Krause-Rehberg, Reinhard; Elsayed, Mohamed; Kozlovskii, Vitalii

2016-01-01

Temperature dependency of the average positron lifetime has been investigated for n-type float-zone silicon, n-FZ-Si(P), subjected to irradiation with 0.9 MeV electrons at RT. In the course of the isochronal annealing a new defect-related temperature-dependent pattern of the positron lifetime spectra has been revealed. Beyond the well known intervals of isochronal annealing of acceptor-like defects such as E-centers, divacancies and A-centers, the positron annihilation at the vacancy defects has been observed in the course of the isochronal annealing from ∝ 320 C up to the limit of reliable detecting of the defect-related positron annihilation lifetime at ≥ 500 C. These data correlate with the ones of recovery of the concentration of the charge carriers and their mobility which is found to continue in the course of annealing to ∝ 570 C; the annealing is accomplished at ∝650 C. A thermally stable complex consisting of the open vacancy volume and the phosphorus impurity atom, V_o_p-P, is suggested as a possible candidate for interpreting the data obtained by the positron annihilation lifetime spectroscopy. An extended couple of semi-vacancies, 2V_s_-_e_x_t, as well as a relaxed inwards a couple of vacancies, 2V_i_n_w, are suggested as the open vacancy volume V_o_p to be probed with the positron. It is argued that a high thermal stability of the V_s_-_e_x_t PV_s_-_e_x_t (or V_i_n_wPV_i_n_w_.) configuration is contributed by the efficiency of PSi_5 bonding. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Study of silicon microstrips detector quantum efficiency using mathematical simulation

International Nuclear Information System (INIS)

Leyva Pernia, Diana; Cabal Rodriguez, Ana Ester; Pinnera Hernandez, Ibrahin; Fabelo, Antonio Leyva; Abreu Alfonso, Yamiel; Cruz Inclan, Carlos M.

2011-01-01

The paper shows the results from the application of mathematical simulation to study the quantum efficiency of a microstrips crystalline silicon detector, intended for medical imaging and the development of other applications such as authentication and dating of cultural heritage. The effects on the quantum efficiency of some parameters of the system, such as the detector-source geometry, X rays energy and detector dead zone thickness, were evaluated. The simulation results were compared with the theoretical prediction and experimental available data, resulting in a proper correspondence. It was concluded that the use of frontal configuration for incident energies lower than 17 keV is more efficient, however the use of the edge-on configuration for applications requiring the detection of energy above this value is recommended. It was also found that the reduction of the detector dead zone led to a considerable increase in quantum efficiency for any energy value in the interval from 5 to 100 keV.(author)

CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS

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V. А. Pilipenko

2017-01-01

Full Text Available Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little to no information on practical implementation of probe electrometry methods, and particularly scanning Kelvin probe method, in the interoperational control of real semiconductor manufacturing process. The purpose of the study was the development of methods for nondestructive testing of semiconductor wafers based on the determination of electrophysical properties of the silicon-silicon dioxide interface and their spatial distribution over wafer’s surface using non-contact probe electrometry methods.Traditional C-V curve analysis and scanning Kelvin probe method were used to characterize silicon- silicon dioxide interface. The samples under testing were silicon wafers of KEF 4.5 and KDB 12 type (orientation <100>, diameter 100 mm.Probe electrometry results revealed uniform spatial distribution of wafer’s surface potential after its preliminary rapid thermal treatment. Silicon-silicon dioxide electric potential values were also higher after treatment than before it. This potential growth correlates with the drop in interface charge density. At the same time local changes in surface potential indicate changes in surface layer structure.Probe electrometry results qualitatively reflect changes of interface charge density in silicon-silicon dioxide structure during its technological treatment. Inhomogeneities of surface potential distribution reflect inhomogeneity of damaged layer thickness and can be used as a means for localization of interface treatment defects.

Influence of radiation induced defect clusters on silicon particle detectors

International Nuclear Information System (INIS)

Junkes, Alexandra

2011-10-01

The Large Hadron Collider (LHC) at the European Organization for Nuclear Research (CERN) addresses some of today's most fundamental questions of particle physics, like the existence of the Higgs boson and supersymmetry. Two large general-purpose experiments (ATLAS, CMS) are installed to detect the products of high energy protonproton and nucleon-nucleon collisions. Silicon detectors are largely employed in the innermost region, the tracking area of the experiments. The proven technology and large scale availability make them the favorite choice. Within the framework of the LHC upgrade to the high-luminosity LHC, the luminosity will be increased to L=10 35 cm -2 s -1 . In particular the pixel sensors in the innermost layers of the silicon trackers will be exposed to an extremely intense radiation field of mainly hadronic particles with fluences of up to Φ eq =10 16 cm -2 . The radiation induced bulk damage in silicon sensors will lead to a severe degradation of the performance during their operational time. This work focusses on the improvement of the radiation tolerance of silicon materials (Float Zone, Magnetic Czochralski, epitaxial silicon) based on the evaluation of radiation induced defects in the silicon lattice using the Deep Level Transient Spectroscopy and the Thermally Stimulated Current methods. It reveals the outstanding role of extended defects (clusters) on the degradation of sensor properties after hadron irradiation in contrast to previous works that treated effects as caused by point defects. It has been found that two cluster related defects are responsible for the main generation of leakage current, the E5 defects with a level in the band gap at E C -0.460 eV and E205a at E C -0.395 eV where E C is the energy of the edge of the conduction band. The E5 defect can be assigned to the tri-vacancy (V 3 ) defect. Furthermore, isochronal annealing experiments have shown that the V 3 defect exhibits a bistability, as does the leakage current. In oxygen

Influence of radiation induced defect clusters on silicon particle detectors

Energy Technology Data Exchange (ETDEWEB)

Junkes, Alexandra

2011-10-15

The Large Hadron Collider (LHC) at the European Organization for Nuclear Research (CERN) addresses some of today's most fundamental questions of particle physics, like the existence of the Higgs boson and supersymmetry. Two large general-purpose experiments (ATLAS, CMS) are installed to detect the products of high energy protonproton and nucleon-nucleon collisions. Silicon detectors are largely employed in the innermost region, the tracking area of the experiments. The proven technology and large scale availability make them the favorite choice. Within the framework of the LHC upgrade to the high-luminosity LHC, the luminosity will be increased to L=10{sup 35} cm{sup -2}s{sup -1}. In particular the pixel sensors in the innermost layers of the silicon trackers will be exposed to an extremely intense radiation field of mainly hadronic particles with fluences of up to {phi}{sub eq}=10{sup 16} cm{sup -2}. The radiation induced bulk damage in silicon sensors will lead to a severe degradation of the performance during their operational time. This work focusses on the improvement of the radiation tolerance of silicon materials (Float Zone, Magnetic Czochralski, epitaxial silicon) based on the evaluation of radiation induced defects in the silicon lattice using the Deep Level Transient Spectroscopy and the Thermally Stimulated Current methods. It reveals the outstanding role of extended defects (clusters) on the degradation of sensor properties after hadron irradiation in contrast to previous works that treated effects as caused by point defects. It has been found that two cluster related defects are responsible for the main generation of leakage current, the E5 defects with a level in the band gap at E{sub C}-0.460 eV and E205a at E{sub C}-0.395 eV where E{sub C} is the energy of the edge of the conduction band. The E5 defect can be assigned to the tri-vacancy (V{sub 3}) defect. Furthermore, isochronal annealing experiments have shown that the V{sub 3} defect

Silicon microphotonic waveguides

International Nuclear Information System (INIS)

Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

2004-01-01

Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

49 CFR 1243.2 - Condensed balance sheet.

Science.gov (United States)

2010-10-01

... 49 Transportation 9 2010-10-01 2010-10-01 false Condensed balance sheet. 1243.2 Section 1243.2... § 1243.2 Condensed balance sheet. Commencing with reports for the 3 months beginning January 1, 1972, and... hereby, required to compile and file quarterly reports of balance sheet items in accordance with...

Electron energization in the geomagnetic tail current sheet

International Nuclear Information System (INIS)

Lyons, L.R.

1984-01-01

Electron motion in the distant tail current sheet is evaluated and found to violate the guiding center approximation at energies > or approx. =100 eV. Most electrons within the energy range approx.10 -1 -10 2 keV that enter the current sheet become trapped within the magnetic field reversal region. These electrons then convect earthward and gain energy from the cross-tail electric field. If the energy spectrum of electrons entering the current sheet is similar to that of electrons from the boundary layer surrounding the magnetotail, the energy gain from the electric field produces electron energy spectra comparable to those observed in the earth's plasma sheet. Thus current sheet interactions can be a significant source of particles and energy for plasma sheet electrons as well as for plasma sheet ions. A small fraction of electrons within the current sheet has its pitch angles scattered so as to be ejected from the current sheet within the atmospheric loss cone. These electrons can account for the electron precipitation near the high-latitude boundary of energetic electrons, which is approximately isotropic in pitch angle up to at least several hundred keV. Current sheet interaction should cause approximately isotropic auroral precipitation up to several hundred keV energies, which extends to significantly lower latitudes for ions than for electrons in agreement with low-altitude satellite observations. Electron precipitation associated with diffuse aurora generally has a transition at 1-10 keV to anisotropic pitch angle distributions. Such electron precipitation cannot be explained by current sheet interactions, but it can be explained by pitch angle diffusion driven by plasma turbulence

Bessel light sheet structured illumination microscopy

Science.gov (United States)

Noshirvani Allahabadi, Golchehr

Biomedical study researchers using animals to model disease and treatment need fast, deep, noninvasive, and inexpensive multi-channel imaging methods. Traditional fluorescence microscopy meets those criteria to an extent. Specifically, two-photon and confocal microscopy, the two most commonly used methods, are limited in penetration depth, cost, resolution, and field of view. In addition, two-photon microscopy has limited ability in multi-channel imaging. Light sheet microscopy, a fast developing 3D fluorescence imaging method, offers attractive advantages over traditional two-photon and confocal microscopy. Light sheet microscopy is much more applicable for in vivo 3D time-lapsed imaging, owing to its selective illumination of tissue layer, superior speed, low light exposure, high penetration depth, and low levels of photobleaching. However, standard light sheet microscopy using Gaussian beam excitation has two main disadvantages: 1) the field of view (FOV) of light sheet microscopy is limited by the depth of focus of the Gaussian beam. 2) Light-sheet images can be degraded by scattering, which limits the penetration of the excitation beam and blurs emission images in deep tissue layers. While two-sided sheet illumination, which doubles the field of view by illuminating the sample from opposite sides, offers a potential solution, the technique adds complexity and cost to the imaging system. We investigate a new technique to address these limitations: Bessel light sheet microscopy in combination with incoherent nonlinear Structured Illumination Microscopy (SIM). Results demonstrate that, at visible wavelengths, Bessel excitation penetrates up to 250 microns deep in the scattering media with single-side illumination. Bessel light sheet microscope achieves confocal level resolution at a lateral resolution of 0.3 micron and an axial resolution of 1 micron. Incoherent nonlinear SIM further reduces the diffused background in Bessel light sheet images, resulting in

Magnetic configurations of the tilted current sheets in magnetotail

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C. Shen

2008-11-01

Full Text Available In this research, the geometrical structures of tilted current sheet and tail flapping waves have been analysed based on multiple spacecraft measurements and some features of the tilted current sheets have been made clear for the first time. The geometrical features of the tilted current sheet revealed in this investigation are as follows: (1 The magnetic field lines (MFLs in the tilted current sheet are generally plane curves and the osculating planes in which the MFLs lie are about vertical to the equatorial plane, while the normal of the tilted current sheet leans severely to the dawn or dusk side. (2 The tilted current sheet may become very thin, the half thickness of its neutral sheet is generally much less than the minimum radius of the curvature of the MFLs. (3 In the neutral sheet, the field-aligned current density becomes very large and has a maximum value at the center of the current sheet. (4 In some cases, the current density is a bifurcated one, and the two humps of the current density often superpose two peaks in the gradient of magnetic strength, indicating that the magnetic gradient drift current is possibly responsible for the formation of the two humps of the current density in some tilted current sheets. Tilted current sheets often appear along with tail current sheet flapping waves. It is found that, in the tail flapping current sheets, the minimum curvature radius of the MFLs in the current sheet is rather large with values around 1 RE, while the neutral sheet may be very thin, with its half thickness being several tenths of RE. During the flapping waves, the current sheet is tilted substantially, and the maximum tilt angle is generally larger than 45°. The phase velocities of these flapping waves are several tens km/s, while their periods and wavelengths are several tens of minutes, and several earth radii, respectively. These tail flapping events generally last several hours and occur during quiet periods or periods of

Relativistic current sheets in electron-positron plasmas

International Nuclear Information System (INIS)

Zenitani, S.

2008-01-01

The current sheet structure with magnetic field reversal is one of the fundamental structure in space and astrophysical plasmas. It draws recent attention in high-energy astrophysical settings, where relativistic electron-positron plasmas are considered. In this talk we will review the recent progress of the physical processes in the relativistic current sheet. The kinetic stability of a single current sheet, the nonlinear behavior of these instabilities, and recent challenges on the multi current sheet systems are introduced. We will also introduce some problems of magnetic reconnection in these relativistic environments. (author)

Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

Science.gov (United States)

Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

1993-01-01

Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

2016-07-04

Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

Quantum conductance staircase of holes in silicon nanosandwiches

Directory of Open Access Journals (Sweden)

Nikolay T. Bagraev