On quantum efficiency of photoluminescence in ZnO layers and nanostructures

Energy Technology Data Exchange (ETDEWEB)

Reshchikov, M.A., E-mail: mreshchi@vcu.ed [Physics Department, Virginia Commonwealth University, 701 W. Grace St., Richmond, VA 23284 (United States); El-Shaer, A.; Behrends, A.; Bakin, A.; Waag, A. [Institute of Semiconductor Technology, Technical University of Braunschweig, Braunschweig D-38106 (Germany)

2009-12-15

In this work we studied PL in ZnO layers and nanostructures, including ZnO homoepitaxial layers on ZnO substrate and ZnO-Zn{sub 1-x}Mg{sub x}O single quantum well (SQW) structures grown on sapphire substrates by MBE, and ZnO nanowires grown on sapphire by MOCVD. The external quantum efficiency (QE) of PL in O-face ZnO layers exceeded that in Zn-face ZnO layers by two orders of magnitude at low temperatures. In a sample with SQW the combined external QE from the 4.6-nm-wide SQW and 50-nm-thick Zn{sub 1-x}Mg{sub x}O barriers achieved 28% at 15 K. The highest external QE was observed in one of the samples with ZnO nanowires-52% at 15 K and 2% at 300 K. Contribution of defect-related PL bands in ZnO nanowires samples was extremely low.

Low temperature fabrication of ZnO compact layer for high performance plastic dye-sensitized ZnO solar cells

International Nuclear Information System (INIS)

Hu Fangyi; Xia Yujing; Guan Zisheng; Yin Xiong; He Tao

2012-01-01

Highlights: ► ZnO compact layer is prepared via simple electrochemical method at low temperature. ► Compact layer can effectively block electron transfer from TCO to electrolyte. ► DSC PCE is improved by 17% when ZnO compact layer is introduced. ► Plastic DSCs with ZnO compact layer show a PCE of 3.29% under AM1.5 100 mW cm −2 . ► The above efficiency is comparable to that with high temperature sintering step. - Abstract: ZnO compact layer has been fabricated on transparent conducting oxide glass and plastic polymer substrates at low temperature via electrodeposition. The results of dark current and cyclic voltammetric measurements demonstrate that the compact layer can effectively reduce the short circuit from transparent conducting oxide to electrolyte in dye-sensitized ZnO solar cells, leading to an increase of open-circuit photovoltage and fill factor of the devices and, thereby, the power conversion efficiency. The resultant plastic dye-sensitized ZnO solar cell presents an efficiency of 3.29% under illumination of 100 mW cm −2 , AM 1.5G. This indicates that electrodeposition is a viable method to fabricate ZnO compact layer for high performance flexible devices.

Examination of the Mg-Zn phase formation in hot-dip galvanized steel sheet; Untersuchung der Mg-Zn-Phasenbildung in feuerverzinktem Stahlblech

Energy Technology Data Exchange (ETDEWEB)

Zywitzki, Olaf; Modes, Thomas; Scheffel, Bert; Metzner, Christoph [Fraunhofer-Institut fuer Elektronenstrahl- und Plasmatechnik, Dresden (Germany)

2012-07-01

Zinc-magnesium layers have been produced by a combination of conventional hot-dip galvanizing and PVD magnesium coating. A subsequent short heat treatment causes the diffusion of magnesium into the zinc layer. The influence of the maximum temperature of the heat treatment on the diffusion of magnesium and on the type and distribution of the formed intermetallic Mg-Zn phases has been examined in detail in a temperature range from 300 to 400 C by means of X-ray phase analyses and metallographic cross sections. With increasing temperature a sequential intermetallic Mg-Zn phase formation has been detected. At 300 C, an initial magnesium rich, intermetallic MgZn{sub 2} surface layer is formed, which, at higher temperatures from 335 to 379 C, is progressively transformed into a zinc rich Mg{sub 2}Zn{sub 11} layer by interdiffusion. In this context, the nucleation of the Mg{sub 2}Zn{sub 11} phase takes place on the interface between the MgZn{sub 2} and the Zn phase. Above the peritectic temperature of 381 C, the microstructure is composed of a zinc matrix in which precipitated MgZn{sub 2} is dispersed. (orig.)

Two-dimensional electron gases in MgZnO/ZnO and ZnO/MgZnO/ZnO heterostructures grown by dual ion beam sputtering

Science.gov (United States)

Singh, Rohit; Arif Khan, Md; Sharma, Pankaj; Than Htay, Myo; Kranti, Abhinav; Mukherjee, Shaibal

2018-04-01

This work reports on the formation of high-density (~1013-1014 cm-2) two-dimensional electron gas (2DEG) in ZnO-based heterostructures, grown by a dual ion beam sputtering system. We probe 2DEG in bilayer MgZnO/ZnO and capped ZnO/MgZnO/ZnO heterostructures utilizing MgZnO barrier layers with varying thickness and Mg content. The effect of the ZnO cap layer thickness on the ZnO/MgZnO/ZnO heterostructure is also studied. Hall measurements demonstrate that the addition of a 5 nm ZnO cap layer results in an enhancement of the 2DEG density by about 1.5 times compared to 1.11 × 1014 cm-2 for the uncapped bilayer heterostructure with the same 30 nm barrier thickness and 30 at.% Mg composition in the barrier layer. From the low-temperature Hall measurement, the sheet carrier concentration and mobility are both found to be independent of the temperature. The capacitance-voltage measurement suggests a carrier density of ~1020 cm-3, confined in 2DEG at the MgZnO/ZnO heterointerface. The results presented are significant for the optimization of 2DEG for the eventual realization of cost-effective and large-area MgZnO/ZnO-based high-electron-mobility transistors.

Microstructural evolution in Mg-rich Mg-Zn-Y alloys

International Nuclear Information System (INIS)

Biswas, T.; Ranganathan, S.; Nair, S.; Bajargan, G.

2005-01-01

Mg-rich Mg-Zn-Y alloys with nominal compositions Mg 97 Zn 1 Y 2 , Mg 97 Zn 2 Y 1 , Mg 92 Zn 6.5 Y 1.5 and Mg 97-x Zn 1 Y 2 Zr x have been chosen for the present study. These alloys are prepared by using sand casting mold. The sand cast alloys are remelted and subjected to copper mold casting and melt spinning techniques. The effect of cooling rate on microstructures was studied. It is observed that the size of the precipitates decreases with an increase of cooling rate. The formation of nano precipitates results in higher strength of the alloy as compared to the conventional alloys. The microstructures of melt spun ribbons are compared with RS/PM (rapidly solidified power metallurgy) Mg 97 Zn 1 Y 2 alloy, obtained from a different source. (author)

Influence of substrate temperature and Zn-precursors on atomic layer deposition of polycrystalline ZnO films on glass

International Nuclear Information System (INIS)

Makino, Hisao; Miyake, Aki; Yamada, Takahiro; Yamamoto, Naoki; Yamamoto, Tetsuya

2009-01-01

Influence of substrate temperature and Zn-precursors on growth rate, crystal structure, and electrical property of undoped ZnO thin films grown by atomic layer deposition (ALD) have been studied. Differences between dimethylzinc (DMeZn) and diethylzinc (DEtZn) used as Zn-precursors were examined. The ZnO films grown using DMeZn showed higher electrical resistivity compared to that grown using DEtZn. However, the higher resistivity in the case of DMeZn was owing to much amount of residual impurities incorporated during the ALD growth

CBE growth of high-quality ZnO epitaxial layers

Energy Technology Data Exchange (ETDEWEB)

El-Shaer, A.; Bakin, A.; Mofor, A.C.; Kreye, M.; Waag, A. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Blaesing, J.; Krost, A. [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany); Stoimenos, J. [Physics Department, Aristotele University, Univ. Campus, 54006 Thessaloniki (Greece); Pecz, B. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, 1525 Budapest (Hungary); Heuken, M. [Aixtron AG, Kackertstr. 15-17, 52072 Aachen (Germany)

2006-03-15

Further improvements on the recently reported novel approach to zinc oxide Chemical Beam Epitaxy (CBE) are presented. Hydrogen peroxide is employed as a very efficient novel oxidant. ZnO layers with a thickness from 100 nm to 600 nm were grown on c-sapphire using a MgO buffer. PL-mapping as well as conductivity mapping shows a good uniformity across the 2 inch ZnO-on-sapphire epiwafers. The measured surface roughness for the best layers is as low as 0.26 nm. HRXRD measurements of the obtained ZnO layers show excellent quality of the single crystalline ZnO. The FWHM of the HRXRD (0002) rocking curves measured for the 2 inch ZnO-on-sapphire wafers is as low as 27 arcsec with a very high lateral homogeneity across the whole wafer. Plane view HRTEM observations reveal the very good quality of the ZnO films. The results indicate that CBE is a suitable technique to fabricate ZnO of very high structural quality, which can eventually be used as an alternative to bulk ZnO substrates. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Dye-sensitized solar cells with a tri-layer ZnO photo-electrode

Energy Technology Data Exchange (ETDEWEB)

Li, Hui; Bai, Jiafan; Feng, Bo; Lu, Xiong; Weng, Jie; Jiang, Chongxi; Wang, Jianxin, E-mail: j.wang63@gmail.com

2013-11-25

Graphical abstract: Schematic diagram for the energy-level, the paths of charge transfer, the model of light scattering in the top layer and the assembly of the DSSC. Highlights: •We successfully fabricated ZnO photo-anodes with a tri-layer ZnO structure. •The ZnO seed layer decreased the transfer resistance at the ZnO/FTO interface. •The ZnO light scattering layer could increase the number of photoelectrons. •J{sub sc} and V{sub oc} were greatly enhanced via the use of the tri-layer ZnO structure. •The efficiency of the DSSCs for a tri-layer ZnO structure was the highest. -- Abstract: In this paper, a tri-layer ZnO structure was designed to fabricate the photo-anodes of dye-sensitized solar cells (DSSC). The results showed that an overall energy-conversion efficiency of 1.18% was achieved for DSSC with the tri-layer photo-anode, which was 14% higher than that obtained from a bilayer ZnO photo-anode (with an efficiency of 1.04%) and 76% higher than that fabricated with a single layer photo-anode (with an efficiency of 0.67%). The photo-current density and the open circuit voltage have greatly increased via the use of the tri-layer ZnO structure. Thus, the tri-layer ZnO structure might provide a new route for the improvement of the overall energy-conversion efficiency for the DSSC of ZnO.

Dye-sensitized solar cells with a tri-layer ZnO photo-electrode

International Nuclear Information System (INIS)

Li, Hui; Bai, Jiafan; Feng, Bo; Lu, Xiong; Weng, Jie; Jiang, Chongxi; Wang, Jianxin

2013-01-01

Graphical abstract: Schematic diagram for the energy-level, the paths of charge transfer, the model of light scattering in the top layer and the assembly of the DSSC. Highlights: •We successfully fabricated ZnO photo-anodes with a tri-layer ZnO structure. •The ZnO seed layer decreased the transfer resistance at the ZnO/FTO interface. •The ZnO light scattering layer could increase the number of photoelectrons. •J sc and V oc were greatly enhanced via the use of the tri-layer ZnO structure. •The efficiency of the DSSCs for a tri-layer ZnO structure was the highest. -- Abstract: In this paper, a tri-layer ZnO structure was designed to fabricate the photo-anodes of dye-sensitized solar cells (DSSC). The results showed that an overall energy-conversion efficiency of 1.18% was achieved for DSSC with the tri-layer photo-anode, which was 14% higher than that obtained from a bilayer ZnO photo-anode (with an efficiency of 1.04%) and 76% higher than that fabricated with a single layer photo-anode (with an efficiency of 0.67%). The photo-current density and the open circuit voltage have greatly increased via the use of the tri-layer ZnO structure. Thus, the tri-layer ZnO structure might provide a new route for the improvement of the overall energy-conversion efficiency for the DSSC of ZnO

A novel intermediate layer for Au/CdZnTe/FTO photoconductive structure

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yuelu; Wang, Linjun, E-mail: ljwang@shu.edu.cn; Xu, Run; Huang, Jian; Tao, Jun; Meng, Hua; Zhang, Jijun; Min, Jiahua

2016-12-01

Highlights: • Graphene layer was spin-coated on CdZnTe to form Au/graphene/CdZnTe/FTO structure. • Graphene layer can significantly improve the contact property of Au/CdZnTe. • Graphene layer can obviously enhance UV photo-response of CdZnTe. • Graphene is a potential buffer material for CdZnTe based high-energy detectors. - Abstract: In this work, graphene is tried to use to improve the performance of polycrystalline CdZnTe high-energy radiation and photon detectors. A graphene intermediate layer is prepared by spin-coating process on the surface of polycrystalline CdZnTe film, which forms a photoconductive Au/graphene/CdZnTe/FTO structure. XRD, Raman, photoelectric response and other characterisation methods are adopted to investigate the effect of graphene layer on the electrical characteristics and UV photo-response performance of CdZnTe photoconductive structure. It is demonstrated that graphene layer can significantly improve the contact property of Au/CdZnTe structure, and obviously enhance its UV photo-response and the UV sensitivity increased with one order of magnitude.

Mobility enhancement in crystalline In-Ga-Zn-oxide with In-rich compositions

Energy Technology Data Exchange (ETDEWEB)

Tsutsui, Kazuhiro; Matsubayashi, Daisuke; Ishihara, Noritaka; Takasu, Takako; Matsuda, Shinpei; Yamazaki, Shunpei [Semiconductor Energy Laboratory Co., Ltd., 398 Hase, Atsugi-shi 243-0036, Kanagawa (Japan)

2015-12-28

The electron mobility of In-Ga-Zn-oxide (IGZO) is known to be enhanced by higher In content. We theoretically investigated the mobility-enhancement mechanism by proposing an In-Ga-Zn-disorder scattering model for an In-rich crystalline IGZO (In{sub 1+x}Ga{sub 1−x}O{sub 3}(ZnO){sub m} (0 < x < 1, m > 0)) thin film. The obtained theoretical mobility was found to be in agreement with experimental Hall mobility for a crystalline In{sub 1.5}Ga{sub 0.5}O{sub 3}(ZnO) (or In{sub 3}GaZn{sub 2}O{sub 8}) thin film. The mechanism specific to In-rich crystalline IGZO thin films is based on three types of Coulomb scattering potentials that originate from effective valence differences. In this study, the In-Ga-Zn-disorder scattering model indicates that the effective valence of the In{sup 3+} ions in In-rich crystalline IGZO thin films significantly affects their electron mobility.

Characterization of spatial manipulation on ZnO nanocomposites consisting of Au nanoparticles, a graphene layer, and ZnO nanorods

Science.gov (United States)

Huang, Shen-Che; Lu, Chien-Cheng; Su, Wei-Ming; Weng, Chen-Yuan; Chen, Yi-Cian; Wang, Shing-Chung; Lu, Tien-Chang; Chen, Ching-Pang; Chen, Hsiang

2018-01-01

Three types of ZnO-based nanocomposites were fabricated consisting of 80-nm Au nanoparticles (NPs), a graphene layer, and ZnO nanorods (NRs). To investigate interactions between the ZnO NRs and Au nanoparticle, multiple material analysis techniques including field-emission scanning electron microscopy (FESEM), surface contact angle measurements, secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopic characterizations were performed. Results indicate that incorporating a graphene layer could block the interaction between the ZnO NRs and the Au NPs. Furthermore, the Raman signal of the Au NPs could be enhanced by inserting a graphene layer on top of the ZnO NRs. Investigation of these graphene-incorporated nanocomposites would be helpful to future studies of the physical properties and Raman analysis of the ZnO-based nanostructure design.

Magnetism in V-/Mn-doped ZnO layers fabricated on sapphire

Energy Technology Data Exchange (ETDEWEB)

Mofor, A.C.; El-Shaer, A.; Schlenker, E.; Bakin, A.; Waag, A. [Technical University Braunschweig, Institute of Semiconductor Technology, Braunschweig (Germany); Reuss, F.; Kling, R.; Schoch, W.; Limmer, W. [University Ulm, Department of Semiconductor Physics, Ulm (Germany); Ahlers, H.; Siegner, U.; Sievers, S.; Albrecht, M. [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany); Eisenmenger, J.; Mueller, T.; Ziemann, P. [University Ulm, Department of Solid State Physics, Ulm (Germany); Huebel, A.; Denninger, G. [Universitaet Stuttgart, 2. Physkalisches Institut, Stuttgart (Germany)

2007-07-15

Doping ZnO with transition metals (TM) is an obvious approach to produce diluted magnetic semiconductors for magnetoelectronic and spintronic applications. We have carried out experimental studies on the fabrication and characterisation of Mn-doped ZnO layers and V-doped ZnO layers and nanorods, the results of which are reviewed in this paper. From SQUID measurements, both epitaxial and implanted ZnMnO layers show paramagnetic behaviour. Epitaxial ZnVO layers show ferromagnetic SQUID signals, but the presence of any secondary phases in the ZnVO layers may not be ruled out. We also show that the used Al{sub 2}O{sub 3} substrates produce a ferromagnetic SQUID signal, that complicates the analysis of magnetisation data and hence the confirmation of ferromagnetism only from SQUID results. (orig.)

RECONSTRUCTION OF CALCINED Zn -Al LAYERED DOUBLE HYDROXIDES DURING TETRACYCLINE ADSORPSION

Directory of Open Access Journals (Sweden)

G. M. Starukh

2015-12-01

Full Text Available Zn-Al mixed oxides containing ZnO different degree crystallinity were obtained by calcinations of Zn-Al layered double hydroxides (LDHs. The reconstruction of calcined Zn-Al LDHs has been performed under stirring in aqueous suspensions. The assynthesized LDHs, its decomposition products, as well as the reconstructed solids upon hydration were characterized by XRD, N2adsorption, differential and thermal gravimetric analysis. It was found that the ability of Zn-Al LDHs to recover a layered structure under the hydration of mixed oxides depends on the degree of ZnO crystallinity. The partial reconstruction of Zn-Al layered structure occurs in tetracycline solutions irrespective to the degree of ZnO crystallinity in calcined LDHs. Calcined Zn-Al LDHs demonstrate the higher adsorption capacity to tetracycline in comparison with as-prepared Zn-Al LDHs. The adsorption of TC on calcined and uncalcined ZnAl LDHs occurs on the centers of one particular type. It is suggested that surface complexation of the A-ring ligand of TC with Al-OH centers takes place.

Atomic Layer Deposition of ZnO on Multi-walled Carbon Nanotubes and Its Use for Synthesis of CNT–ZnO Heterostructures

Directory of Open Access Journals (Sweden)

Li C

2010-01-01

Full Text Available Abstract In this article, direct coating of ZnO on PECVD-grown multi-walled carbon nanotubes (MWCNTs is achieved using atomic layer deposition (ALD. Transmission electron microscopy investigation shows that the deposited ZnO shell is continuous and uniform, in contrast to the previously reported particle morphology. The ZnO layer has a good crystalline quality as indicated by Raman and photoluminescence (PL measurements. We also show that such ZnO layer can be used as seed layer for subsequent hydrothermal growth of ZnO nanorods, resulting in branched CNT–inorganic hybrid nanostructures. Potentially, this method can also apply to the fabrication of ZnO-based hybrid nanostructures on other carbon nanomaterials.

Enhanced photovoltaic performance of ZnO nanorod-based dye-sensitized solar cells by using Ga doped ZnO seed layer

Energy Technology Data Exchange (ETDEWEB)

Dou, Yuanyao [State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing 400044 (China); Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Wu, Fang, E-mail: fang01234@163.com [State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing 400044 (China); Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Mao, Caiying [Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Fang, Liang, E-mail: lfang@cqu.edu.cn [State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing 400044 (China); Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Guo, Shengchun [Department of Applied Physics, College of Physics, Chongqing University, Chongqing 401331 (China); Zhou, Miao [State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing 400044 (China)

2015-06-05

Highlights: • ZnO nanorods were grown on Ga-doped ZnO seed layers using hydrothermal method. • Using the ZnO nanorods as photoanodes for fabricated dye-sensitized solar cells. • The highest η of 1.23% can be achieved in a DSSC with 3 at.% Ga-doped in seeds. • The effects of ZnO seed layers on electron transport properties were investigated. • The enhancement performance of DSSCs contributed to higher dye loading and η{sub cc}. - Abstract: Zinc oxide (ZnO) nanorod arrays were grown on FTO substrates with a Ga-doped ZnO (GZO) seed layer by a hydrothermal method. GZO seed layers were obtained via sol–gel technology with Ga concentration in the range of 0–4 at.%. The dye sensitized solar cells (DSSCs) using ZnO nanorod arrays as the photoanode layers were prepared. The effect of Ga dopant concentrations in ZnO seed layer on the morphology features of ZnO nanorod arrays and the performance of DSSCs were systematically investigated. Results indicate that the average diameter and density of ZnO nanorod arrays decrease with increasing Ga concentration, but their length shows an opposite trend. The photocurrent density–voltage (J–V) characteristics reveal that the DSSCs with GZO seed layer exhibit significantly improved photovoltaic performance. In particular, the highest energy conversion efficiency (η) of 1.23% can be achieved in a DSSC with 3 at.% Ga doping, which is increased by 86.36% compared with that of the undoped DSSC. The external quantum efficiency (EQE) spectra and electrochemical impedance spectroscopy (EIS) were employed to explore the photon-to-electron conversion process in DSSCs. It is demonstrated that the performance enhancement of DSSCs based on GZO seed layer can be attributed to higher amount of dye loading, more efficient electron transportation and better electrons collection efficiency.

Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

Science.gov (United States)

Giri, Pushpa; Chakrabarti, P.

2016-05-01

Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

Polarization-dependent asymmetric hysteresis behavior in ZnCrO layers

International Nuclear Information System (INIS)

Lee, Youngmin; Kim, Deukyoung; Lee, Sejoon; Fu, Dejun

2012-01-01

A ZnCrO layer grown on a Pt (111)/Al 2 O 3 (0001) substrate exhibits a lattice displacement induced ferroelectric behavior due to a modulation in the lattice translation symmetry. The top-to-bottom Pt/ZnCrO/Pt structure shows asymmetric hysteresis loops in positive and negative voltage bias regions. This is attributed to a change in the Schottky emission rate due to the nonlinear polarization of the ZnCrO barrier. The characteristics of the hysteresis loops depend on the film textures of ZnCrO, which vary with the oxygen partial pressure during the growth stage of the ZnCrO layers. The results suggest that ZnCrO has efficacy characteristics for applications in the non-volatile resistive-switching systems.

Hydrothermal Growth of Vertically Aligned ZnO Nanorods Using a Biocomposite Seed Layer of ZnO Nanoparticles.

Science.gov (United States)

Ibupoto, Zafar Hussain; Khun, Kimleang; Eriksson, Martin; AlSalhi, Mohammad; Atif, Muhammad; Ansari, Anees; Willander, Magnus

2013-08-19

Well aligned ZnO nanorods have been prepared by a low temperature aqueous chemical growth method, using a biocomposite seed layer of ZnO nanoparticles prepared in starch and cellulose bio polymers. The effect of different concentrations of biocomposite seed layer on the alignment of ZnO nanorods has been investigated. ZnO nanorods grown on a gold-coated glass substrate have been characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) techniques. These techniques have shown that the ZnO nanorods are well aligned and perpendicular to the substrate, and grown with a high density and uniformity on the substrate. Moreover, ZnO nanorods can be grown with an orientation along the c -axis of the substrate and exhibit a wurtzite crystal structure with a dominant (002) peak in an XRD spectrum and possessed a high crystal quality. A photoluminescence (PL) spectroscopy study of the ZnO nanorods has revealed a conventional near band edge ultraviolet emission, along with emission in the visible part of the electromagnetic spectrum due to defect emission. This study provides an alternative method for the fabrication of well aligned ZnO nanorods. This method can be helpful in improving the performance of devices where alignment plays a significant role.

Hydrothermal Growth of Vertically Aligned ZnO Nanorods Using a Biocomposite Seed Layer of ZnO Nanoparticles

Directory of Open Access Journals (Sweden)

Zafar Hussain Ibupoto

2013-08-01

Full Text Available Well aligned ZnO nanorods have been prepared by a low temperature aqueous chemical growth method, using a biocomposite seed layer of ZnO nanoparticles prepared in starch and cellulose bio polymers. The effect of different concentrations of biocomposite seed layer on the alignment of ZnO nanorods has been investigated. ZnO nanorods grown on a gold-coated glass substrate have been characterized by X-ray diffraction (XRD and field emission scanning electron microscopy (FESEM techniques. These techniques have shown that the ZnO nanorods are well aligned and perpendicular to the substrate, and grown with a high density and uniformity on the substrate. Moreover, ZnO nanorods can be grown with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a dominant (002 peak in an XRD spectrum and possessed a high crystal quality. A photoluminescence (PL spectroscopy study of the ZnO nanorods has revealed a conventional near band edge ultraviolet emission, along with emission in the visible part of the electromagnetic spectrum due to defect emission. This study provides an alternative method for the fabrication of well aligned ZnO nanorods. This method can be helpful in improving the performance of devices where alignment plays a significant role.

Surface potential driven dissolution phenomena of [0 0 0 1]-oriented ZnO nanorods grown from ZnO and Pt seed layers

Science.gov (United States)

Seo, Youngmi; Kim, Jung Hyeun

2011-06-01

Highly oriented ZnO nanorods are synthesized hydrothermally on ZnO and Pt seed layers, and they are dissolved in KOH solution. The rods grown on ZnO seed layer show uniform dissolution, but those grown on Pt seed layer are rod-selectively dissolved. The ZnO nanorods from both seed layers show the same crystalline structure through XRD and Raman spectrometer data. However, the surface potential analysis reveals big difference for ZnO and Pt seed cases. The surface potential distribution is very uniform for the ZnO seed case, but it is much fluctuated on the Pt seed case. It suggests that the rod-selective dissolution phenomena on Pt seed case are likely due to the surface energy difference.

Microstructural characterization of chemical bath deposited and sputtered Zn(O,S) buffer layers

International Nuclear Information System (INIS)

Gautron, E.; Buffière, M.; Harel, S.; Assmann, L.; Arzel, L.; Brohan, L.; Kessler, J.; Barreau, N.

2013-01-01

The present work aims at investigating the microstructure of Zn(O,S) buffer layers relative to their deposition route, namely either chemical bath deposition (CBD) or RF co-sputtering process (PVD) under pure Ar. The core of the study consists of cross-sectional transmission electron microscopy (TEM) characterization of the differently grown Zn(O,S) thin films on co-evaporated Cu(In,Ga)Se 2 (CIGSe) absorbers. It shows that the morphology of Zn(O,S) layer deposited on CIGSe using CBD process is made of a thin layer of well oriented ZnS sphalerite-(111) and/or ZnS wurtzite-(0002) planes parallel to CIGSe chalcopyrite-(112) planes at the interface with CIGSe followed by misoriented nanometer-sized ZnS crystallites in an amorphous phase. As far as (PVD)Zn(O,S) is concerned, the TEM analyses reveal two different microstructures depending on the S-content in the films: for [S] / ([O] + [S]) = 0.6, the buffer layer is made of ZnO zincite and ZnS wurtzite crystallites grown nearly coherently to each other, with (0002) planes nearly parallel with CIGSe-(112) planes, while for [S] / ([O] + [S]) = 0.3, it is made of ZnO zincite type crystals with O atoms substituted by S atoms, with (0002) planes perfectly aligned with CIGSe-(112) planes. Such microstructural differences can explain why photovoltaic performances are dependent on the Zn(O,S) buffer layer deposition route. - Highlights: ► Zn(O,S) layers were grown by chemical bath (CBD) or physical vapor (PVD) deposition. ► For CBD, a 3 nm ZnS layer is followed by ZnS nano-crystallites in an amorphous phase. ► For PVD with [S] / ([O] + [S]) = 0.3, the layer has a Zn(O,S) zincite structure. ► For PVD with [S] / ([O] + [S]) = 0.6, ZnS wurtzite and ZnO zincite phases are mixed

Ab Initio factorized LCAO calculations of the electronic band structure of ZnSe, ZnS, and the (ZnSe)1(ZnS)1 strained-layer superlattice

International Nuclear Information System (INIS)

Marshall, T.S.; Wilson, T.M.

1992-01-01

The authors report on the results of electronic band structure calculations of bulk ZnSe, bulk ZnS and the (ZnSe) 1 (ZnS) 1 , strained-layer superlattice (SLS) using the ab initio factorized linear combination of atomic orbitals method. The bulk calculations were done using the standard primitive nonrectangular 2-atom zinc blende unit cell, while the SLS calculation was done using a primitive tetragonal 4-atom unit cell modeled from the CuAu I structure. The analytic fit to the SLS crystalline potential was determined by using the nonlinear coefficients from the bulk fits. The CPU time saved by factorizing the energy matrix integrals and using a rectangular unit cell is discussed

Polarization-dependent asymmetric hysteresis behavior in ZnCrO layers

Energy Technology Data Exchange (ETDEWEB)

Lee, Youngmin; Kim, Deukyoung; Lee, Sejoon [Dongguk University, Seoul (Korea, Republic of); Fu, Dejun [Wuhan University, Wuhan (China)

2012-06-15

A ZnCrO layer grown on a Pt (111)/Al{sub 2}O{sub 3} (0001) substrate exhibits a lattice displacement induced ferroelectric behavior due to a modulation in the lattice translation symmetry. The top-to-bottom Pt/ZnCrO/Pt structure shows asymmetric hysteresis loops in positive and negative voltage bias regions. This is attributed to a change in the Schottky emission rate due to the nonlinear polarization of the ZnCrO barrier. The characteristics of the hysteresis loops depend on the film textures of ZnCrO, which vary with the oxygen partial pressure during the growth stage of the ZnCrO layers. The results suggest that ZnCrO has efficacy characteristics for applications in the non-volatile resistive-switching systems.

Effects of ZnO Seed Layers Prepared with Various Precursor Concentrations on Structural and Defect Emission Properties of ZnO Nanorods Grown by Hydrothermal Method

Energy Technology Data Exchange (ETDEWEB)

Kim, Soaram; Nam, Giwoong; Leem, Jae-Young; Kim, Yangsoo [Inje University, Gimhae (Korea, Republic of); Kim, Ghun Sik; Yoon, Sung Pil [Korea Institute of Science and Technology, Seoul (Korea, Republic of)

2013-07-15

ZnO nanorods were grown by a hydrothermal method on ZnO seed layers that had previously been prepared from solutions containing various precursor concentrations. The effects of the ZnO seed layers prepared with various precursor concentrations on the structural and defect emissions of the ZnO nanorods were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) spectroscopy. The surface morphology of the ZnO seed layers changed with an increasing precursor concentration, and the diameters and densities of the ZnO nanorods depended on the morphologies of the ZnO seed layers. The ZnO seed layers prepared with various precursor concentrations affected the residual stress in the nanorods grown on the seed layers, the intensity and full widths at half maximum of the 2-theta angle in the XRD spectra for the nanorods, and the intensity and position of the defect emission peak in deep-level emission (DLE) PL spectra for the ZnO nanorods.

Enhanced solar cell efficiency and stability using ZnS passivation layer for CdS quantum-dot sensitized actinomorphic hexagonal columnar ZnO

International Nuclear Information System (INIS)

Chen, Yanli; Tao, Qiang; Fu, Wuyou; Yang, Haibin; Zhou, Xiaoming; Zhang, Yanyan; Su, Shi; Wang, Peng; Li, Minghui

2014-01-01

Highlights: • The synthetic of ZnS/CdS QDs/AHC-ZnO photoanode with a simple method. • The power conversion efficiency of the ZnS/CdS QDs/AHC-ZnO is 1.81%. • The effects of photovoltaic performances caused by CdS and ZnS amounts were studied. • ZnS passivation layer enhanced electron lifetime significantly. - Abstract: We report the photoanodes consisting of CdS quantum-dots (QDs) sensitized actinomorphic hexagonal columnar ZnO (CdS QDs/AHC-ZnO) with ZnS passivation layer are applied for solar cells. Simple chemical solution synthesized AHC-ZnO films on transparent conducting glass substrates, and then, AHC-ZnO is functionalized with uniform CdS and ZnS QDs via successive ionic layer adsorption and reaction (SILAR) method. The as-prepared materials were characterized by XRD, SEM, TEM, UV–vis diffused reflectance absorption spectra and photovoltaic performances analysis. Photovoltaic performances results indicate the quantity of CdS QDs as well as the visible light absorption threshold can be effectively controlled by varying the coating cycles during the SILAR process, and the photocurrent density (Jsc) is greatly improved by increasing the amount of ZnS. By optimizing the AHC-ZnO with the amount of CdS and ZnS, the best efficiency of 1.81% was achieved for solar cell under AM 1.5 G illumination with Jsc = 7.44 mA/cm 2 , Voc = 0.57 V and FF = 43%

Study of annealing effect on the growth of ZnO nanorods on ZnO seed layers

Science.gov (United States)

Sannakashappanavar, Basavaraj S.; Pattanashetti, Nandini A.; Byrareddy, C. R.; Yadav, Aniruddh Bahadur

2018-04-01

A zinc oxide (ZnO) seed layer was deposited on the SiO2/Si substrate by RF sputtering. To study the effect of annealing, the seed layers were classified into annealed and unannealed thin films. Annealing of the seed layers was carried at 450°C. Surface morphology of the seed layers were studied by Atomic force microscopy. ZnO nanorods were then grown on both the types of seed layer by hydrothermal method. The morphology and the structural properties of the nanorods were characterized by X-ray diffraction and Scanning electron microscopy. The effect of seed layer annealing on the growth and orientation of the ZnO nanorods were clearly examined on comparing with the nanorods grown on unannealed seed layer. The nanorods grown on annealed seed layers were found to be well aligned and oriented. Further, the I-V characteristic study was carried out on these aligned nanorods. The results supports positively for the future work to further enhance the properties of developed nanorods for their wide applications in electronic and optoelectronic devices.

Growth of ZnO layers for transparent and flexible electronics

International Nuclear Information System (INIS)

Mofor, A.C.; Bakin, A.S.; Postels, B.; Suleiman, M.; Elshaer, A.; Waag, A.

2008-01-01

We have deposited and characterised ZnO on flexible and transparent plastic polymer. We employed a specially designed vapour phase growth system with elemental sources for zinc and oxygen and deposited thin ZnO films at temperatures below 400 deg. C. Basic photoluminescence characterisation confirms ZnO. Ohmic contacts were fabricated on these layers and the layers exhibit significantly high electron concentration with carrier mobility μ of up to 10.78 cm 2 V -1 s -1 . Furthermore, we show how these layers can be processed with conventional device processing techniques

Growth of ZnO layers for transparent and flexible electronics

Energy Technology Data Exchange (ETDEWEB)

Mofor, A.C.; Bakin, A.S.; Postels, B.; Suleiman, M.; Elshaer, A.; Waag, A. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Str. 66, D-38106 Braunschweig (Germany)

2008-02-15

We have deposited and characterised ZnO on flexible and transparent plastic polymer. We employed a specially designed vapour phase growth system with elemental sources for zinc and oxygen and deposited thin ZnO films at temperatures below 400 deg. C. Basic photoluminescence characterisation confirms ZnO. Ohmic contacts were fabricated on these layers and the layers exhibit significantly high electron concentration with carrier mobility {mu} of up to 10.78 cm{sup 2} V{sup -1} s{sup -1}. Furthermore, we show how these layers can be processed with conventional device processing techniques.

Electrical properties of ZnO nanorods and layers

Energy Technology Data Exchange (ETDEWEB)

Schlenker, Eva; Bakin, Andrey; Peters, Ole; Mofor, Augustine C.; Postels, Bianca; El-Shaer, Hamid; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig (Germany); Weimann, Thomas; Hinze, Peter [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany)

2007-07-01

ZnO has attracted a lot of interest in the scientific community due to its outstanding properties. With a band gap of 3.37 eV and an exciton binding energy of 60 meV it is a promising candidate for micro- and optoelectronic applications. The growth of ZnO nanostructures and epitaxial layers is well under control and their optical and structural properties are already thoroughly characterized. However, due to contacting difficulties, less reports exist on the electrical properties of single ZnO nanostructures. In this contribution we present various contacting methods in order to explore the electrical properties of individual nanorods either grown by aqueous chemical growth or vapor phase transport. Current-Voltage characteristics were obtained by using an atomic force microscope with a conductive tip or by patterning contacts with e-beam lithography. The results are compared to the ones obtained from measurements on epitaxially grown ZnO layers and first applications are presented.

Effect of reactant concentration on the structural properties of hydrothermally-grown ZnO rods on seed-layer ZnO / polyethylene terephthalate substrates

Energy Technology Data Exchange (ETDEWEB)

Jeong, Y. I.; Shin, C. M.; Heo, J. H.; Ryu, H. [Inje University, Gimhae (Korea, Republic of); Lee, W. J. [Dong-Eui University, Busan (Korea, Republic of); Son, C. S. [Silla University, Busan (Korea, Republic of); Choi, H. [Pukyong National University, Busan (Korea, Republic of)

2011-09-15

The morphology and the structural properties were studied for zinc-oxide (ZnO) rods hydrothermally grown on seed-layer ZnO/polyethylene terephthalate (PET) substrates at various reactant concentrations. Dissolved solutions with de-ionized water, zinc nitrate hexahydrate (Zn(NO{sub 3}){sub 2}{center_dot}6H{sub 2}O, ZNH) and hexamethylenetetramine (C{sub 6}H{sub 12}N{sub 4}, HMT) were employed as reactants for hydrothermal growth of ZnO. The transparency of the mixtures (ZNH+HMT) with increasing reactant concentration from 0.025 to 0.25 M changed from transparent to translucent to opaque (white colors) due to Zn(OH){sub 2} precipitates. When the concentration was increased, the density of the ZnO rods increased, and the morphology of the ZnO rods changed from a hexagonal flat-end shape to a sharp-end or flake-like structure. The sharp-end rods with increasing concentration from 0.1 to 0.15 M resulted from the etching process at a lower pH condition (less than pH 6) after the ZnO rod growth, and the flake-like structure was due to a high growth rate. The ZnO seed layer might have improved the alignment of ZnO rods and made a high density of ZnO rods. In addition, the structural properties were improved at lower concentrations by inserting a seed layer.

Origin of localized states in zinc-blende ZnCdSe thin films and the influence on carrier relaxation of self-assembled ZnTe/ZnCdSe quantum dots

International Nuclear Information System (INIS)

Lee, Ling; Dai, Yue-Ru; Yang, Chu-Shou; Fan, Wen-Chung; Chou, Wu-Ching

2015-01-01

Highlights: • The localized emission in zinc-blende ZnCdSe is induced by excess selenium. • An optimized growth is demonstrated as the VI/II ratio approaches unity. • Size-independent lifetimes are observed in ZnTe/ZnCdSe quantum dots. • Localized electrons in the capping layer dominate size-independent lifetimes. - Abstract: This study discovered the origin of deep level emission in zinc-blende ZnCdSe thin films grown by molecular beam epitaxy, in which a localization behavior was noticed. Pronounced deep level emission observed in films grown under a VI/II ratio of 1.74 (Se-accumulated regime) could be suppressed by a lower VI/II ratio of 1.04 (intermediate regime) and 0.74 (metal-rich regime). Hence the localized states could be correlated to excess selenium accumulated at the growth surface. The localized states also influence the carrier relaxation process of self-assembled ZnTe quantum dots embedded in a ZnCdSe matrix. Once quantum dots surmount the wetting layer, localized electrons in the capping layer dominate the type-II transition and exhibit size-independent lifetimes

Hydrothermal Growth and Application of ZnO Nanowire Films with ZnO and TiO2Buffer Layers in Dye-Sensitized Solar Cells

Directory of Open Access Journals (Sweden)

Jiang Chunhua

2009-01-01

Full Text Available Abstract This paper reports the effects of the seed layers prepared by spin-coating and dip-coating methods on the morphology and density of ZnO nanowire arrays, thus on the performance of ZnO nanowire-based dye-sensitized solar cells (DSSCs. The nanowire films with the thick ZnO buffer layer (~0.8–1 μm thick can improve the open circuit voltage of the DSSCs through suppressing carrier recombination, however, and cause the decrease of dye loading absorbed on ZnO nanowires. In order to further investigate the effect of TiO2buffer layer on the performance of ZnO nanowire-based DSSCs, compared with the ZnO nanowire-based DSSCs without a compact TiO2buffer layer, the photovoltaic conversion efficiency and open circuit voltage of the ZnO DSSCs with the compact TiO2layer (~50 nm thick were improved by 3.9–12.5 and 2.4–41.7%, respectively. This can be attributed to the introduction of the compact TiO2layer prepared by sputtering method, which effectively suppressed carrier recombination occurring across both the film–electrolyte interface and the substrate–electrolyte interface.

Optimization of Electrochemically Deposited Highly Doped ZnO Bilayers on Ga-Rich Chalcopyrite Selenide for Cost-Effective Photovoltaic Device Technology

Directory of Open Access Journals (Sweden)

Dimitra N. Papadimitriou

2016-11-01

Full Text Available High quality polycrystalline bilayers of aluminium doped ZnO (Al:ZnO were successively electrodeposited in the form of columnar structures preferentially oriented along the ( 10 1 ¯ 1 crystallographic direction from aqueous solution of zinc nitrate (Zn(NO32 at negative electrochemical potential of EC = (−0.8–(−1.2 V and moderate temperature of 80 °C on gallium rich (30% Ga chalcopyrite selenide Cu(In,GaSe2 (CIGS with chemically deposited ZnSe buffer (ZnSe/Cu(In,GaSe2/Mo/glass. The aluminium doped ZnO layer properties have initially been probed by deposition of Al:ZnO/i-ZnO bilayers directly on Mo/glass substrates. The band-gap energy of the Al:ZnO/i-ZnO reference layers was found to vary from 3.2 to 3.7 eV by varying the AlCl3 solute dopant concentration from 1 to 20 mM. The electrical resistivity of indium-pellet contacted highly doped Al:ZnO sheet of In/Al:ZnO/i-ZnO/Mo/glass reference samples was of the order ρ ~10−5 Ω·cm; the respective carrier concentration of the order 1022 cm−3 is commensurate with that of sputtered Al:ZnO layers. For crystal quality optimization of the bilayers by maintenance of the volatile selenium content of the chalcopyrite, they were subjected to 2-step annealing under successive temperature raise and N2 flux regulation. The hydrostatic compressive strain due to Al3+ incorporation in the ZnO lattice of bilayers processed successively with 5 and 12 mM AlCl3 dopant was εh = −0.046 and the respective stress σh = −20 GPa. The surface reflectivity of maximum 5% over the scanned region of 180–900 nm and the (optical band gap of Eg = 3.67 eV were indicative of the high optical quality of the electrochemically deposited (ECD Al:ZnO bilayers.

Simple Preparation of ZnO Nano-layer by Sol-Gel Method as Active Electrode in P3HT/ZnO Heterojunction Solar Cell

Science.gov (United States)

Aprilia, Annisa; Herman, Hidayat, Rahmat

2010-10-01

Highly transparent undoped ZnO thin films have been prepared on glass and indium tin oxide substrates with simple process by sol-gel route and dip-coating deposition. Gel precursor of ZnO was prepared from zinc acetat dehydrate solution in methanol with the addition of trietylamine as stabilizing agent. Thin layer of gel precursor was prepared by dip coating and then followed by calcination at 400° C for 5 minute in air atmosphere. The thickness of the resulted ZnO thin film produced by ten times coating is about 150 nm. The films shows high transmittance larger than 98% in the visible region (400-800 nm). Absorption is observed in the UV region with absorption onset at about 390 nm indicating varying band gap between 3.18 eV until 3.23 eV depending on the number of coating layer. The AFM image shows that the films seems to be constructed from random stacking of nano-sized ZnO particle in the order of 50 nm. Among the prepared samples, the lowest resistivity is about 1.8×107 Ωm observed in the five-layer coating film. In order to fabricate solar cell structure, P3HT was deposited onto the ZnO thin film layer by spin casting technique and then followed by metal (Au) layer deposition by thermal evaporation. The formed solar cell has the inverted type solar cell with ITO/ZnO/P3HT/Au configuration. By the insertion ZnO layer, the photocurrent was improved by more than ten orders of magnitude in comparison to that of without ZnO layer. The measured photocurrent decreases at large number of coating layer which is supposed to be related with the current limitation by the effective carrier path length in ZnO layer.

Metal-organic-vapor-phase-epitaxy and characterization of homoepitaxial ZnO-layers; Metallorganische Gasphasenepitaxie und Charakteriesierung homoepitaktischer ZnO-Schichten

Energy Technology Data Exchange (ETDEWEB)

Heinze, Soeren

2009-03-30

ZnO is a direct semiconductor with a band gap of 3.37 eV and an exciton binding energy of about 60 meV. By alloying with cadmium or magnesium the band gap can be varied between 2.9 eV and 4 eV, which makes the realization of for instance quantum pot structures. Therefore ZnO is a promising material for optoelectronic applications in the blue and near-ultraviolet spectral range. In spite of world-wide numerous research activities over the last years the realization of p-type ZnO could indeed not sufficiently (i.e. reproduceable and long-time stably) be solved. The ZnO layers of this thesis were fabricated by means of metalorganic gas-phase epitaxy. By means of the studies on heteroepitactically deposed, undoped layers I show the limits of the heteroepitaxy. Although in doping attempts no p-type ZnO could be fabricated. By introduction of a three-stage growth procedure physical properties (morphology, luminescence, crystallographic and electric properties) of the upper ZnO layer could be distinctly improved. On the other hand it was proved that during the fabrication process an electrically high-conductive intermediate layer in the neighbourhood of the substrate/ZnO interface is formed, the formation of which cannot be avoided in the heteroepitaxy. Since about three years ZnO substrates with very good quality are commercially available. Therefore the essential part of this thesis tracts my works on the homoepitaxy of ZnO. For a successful homoepitactical growth a thermal pre-treatment (annealing) of the substrate is necessary. Thereby the substrate is located in a surrounding of ZnO powder and an oxygen atmosphere. The optimal tempering conditions were determined and the influence of these pre-treatment on the physical properties of the substrated were detailedly studied. After the annealing the substrates are suited for the epitaxy. The experiences from the heteroepitaxy could not without more ado be transferred to the homoepitaxy. The quality of the homoepitactical

Characterization of Non-Polar ZnO Layers with Positron Annihilation Spectroscopy

Science.gov (United States)

Zubiaga, A.; Tuomisto, F.; Zúñiga-Pérez, J.; Muñoz-San José, V.

2008-11-01

We applied positron annihilation spectroscopy to study the effect of growth polarity on the vacancy defects in ZnO grown by metal-organic vapor phase deposition on sapphire. Both c-plane and a-plane ZnO layers were measured, and Zn vacancies were identified as the dominant defects detected by positrons. The results are qualitatively similar to those of earlier experiments in GaN. The Zn vacancy concentration decreases in c-plane ZnO by almost one order of magnitude (from high 1017 cm-3 to low 1017 cm-3) when the layer thickness is increased from 0.5 to 2 μm. Interestingly, in a-plane ZnO the Zn vacancy concentration is constant at a level of about 2×1017 cm-3 in all the samples with thicknesses varying from 0.6 to 2.4 μm. The anisotropy of the Doppler broadening of the annihilation radiation parallel and perpendicular to the hexagonal c-axis was also measured.

Double-layered ZnO nanostructures for efficient perovskite solar cells

KAUST Repository

Mahmood, Khalid; S. Swain, Bhabani; Amassian, Aram

2014-01-01

To date, a single layer of TiO2 or ZnO has been the most successful implementations of any electron transport layer (ETL) in solution-processed perovskite solar cells. In a quest to improve the ETL, we explore a new nanostructured double-layer ZnO film for mesoscopic perovskite-based thin film photovoltaics. This approach yields a maximum power conversion efficiency of 10.35%, which we attribute to the morphology of oxide layer and to faster electron transport. The successful implementation of the low-temperature hydrothermally processed double-layer ZnO film as ETL in perovskite solar cells highlights the opportunities to further improve the efficiencies by focusing on the ETL in this rapidly developing field. This journal is

Photoluminescence characteristics of Pb-doped, molecular-beam-epitaxy grown ZnSe crystal layers

International Nuclear Information System (INIS)

Mita, Yoh; Kuronuma, Ryoichi; Inoue, Masanori; Sasaki, Shoichiro; Miyamoto, Yoshinobu

2004-01-01

The characteristic green photoluminescence emission and related phenomena in Pb-doped, molecular-beam-epitaxy (MBE)-grown ZnSe crystal layers were investigated to explore the nature of the center responsible for the green emission. The intensity of the green emission showed a distinct nonlinear dependence on excitation intensity. Pb-diffused polycrystalline ZnSe was similarly examined for comparison. The characteristic green emission has been observed only in MBE-grown ZnSe crystal layers with moderate Pb doping. The results of the investigations on the growth conditions, luminescence, and related properties of the ZnSe crystal layers suggest that the green emission is due to isolated Pb replacing Zn and surrounded with regular ZnSe lattice with a high perfection

Grain boundary layer behavior in ZnO/Si heterostructure

International Nuclear Information System (INIS)

Liu Bingce; Liu Cihui; Yi Bo

2010-01-01

The grain boundary layer behavior in ZnO/Si heterostucture is investigated. The current-voltage (I-V) curves, deep level transient spectra (DLTS) and capacitance-voltage (C-V) curves are measured. The transport currents of ZnO/Si heterojunction are dominated by grain boundary layer as high densities of interfacial states existed. The interesting phenomenon that the crossing of In I-V curves of ZnO/Si heterojunction at various measurement temperatures and the decrease of its effective barrier height with the decrement of temperature are in contradiction with the ideal heterojunction thermal emission model is observed. The details will be discussed in the following. (semiconductor physics)

ZnMgO-ZnO quantum wells embedded in ZnO nanopillars: Towards realisation of nano-LEDs

Energy Technology Data Exchange (ETDEWEB)

Bakin, A.; El-Shaer, A.; Mofor, A.C.; Al-Suleiman, M.; Schlenker, E.; Waag, A. [Institute of Semiconductor Technology, Braunschweig Technical University, Hans-Sommer-Str. 66, 38106 Braunschweig (Germany)

2007-07-01

ZnO thin films, ZnMgO/ZnO heterostructures and ZnO nanostructures were fabricated using molecular beam epitaxy (MBE), vapour phase transport (VPT) and an aqueous chemical growth approach (ACG). The possibility to employ several fabrication techniques is of special importance for the realization of unique device structures. MBE was implemented for ZnO-based layer and heterostructure growth. Pronounced RHEED oscillations were used for growth control and optimisation, resulting in high quality ZnO and Zn{sub 1-x}Mg{sub x}O epilayers and heterostructures, as well as ZnMgO/ZnO quantum wells on sapphire and SiC substrates. A novel advanced VPT approach is developed and sapphire, SiC, ZnO epitaxial layers, and even plastic and glass were implemented as substrates for ZnO growth. The VPT fabrication of ZnO nanopillars, leading to well aligned, c-axis oriented nanopillars with excellent quality and purity is demonstrated. Successful steps were made towards device fabrication on ZnO basis. The nanopillar fabrication technique is combined with MBE technology: MBE-grown ZnMgO/ZnO quantum well structures were grown on ZnO nanopillars presenting significant progress towards nano-LEDs realization. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Determination of chemical state of Al doping element in ZnO layer

International Nuclear Information System (INIS)

Csik, A.; Toth, J.; Lovics, R.; Takats, V.; Hakl, J.; Vad, K.

2011-01-01

Complete text of publication follows. Transparent and conducting oxides (TCO) thin films are very important from the scientific and technological point of view. The coexistence of electrical conductivity and optical transparency in these materials makes it possible to use them in modern technologies: transparent electrodes for flat panel displays and photovoltaic cells, low emissivity windows, transparent thin films transistors, light emitting diodes. One of the important TCO semiconductors is the impurity-doped zinc-oxide (ZnO) layer, for example aluminium doped zinc-oxide layer (AZO), due to its unique physical and chemical properties. It has wide band gap (3.44 eV) and large exciton binding energy (60 meV). ZnO thin layers have a great interest for potential applications in optical and optoelectronic devices. Furthermore, high quality single crystal ZnO wafers has already been available as a result of new developments in ZnO growth technologies with the capability to scale up wafer size, which is an important factor for increasing efficiency of solar cells. Nonetheless, in order to enable the use of ZnO layers with enhanced electrical properties, higher conductivities can be obtained by doping with donor elements such as aluminium, gallium, indium, boron or fluorine. Investigation of p-type doping possibilities, diffusion processes and thermal stability of these layers are in the focus of interest in the interpretation of their optical and electrical properties, and the prediction of their lifetime. In our SNMS/SIMS-XPS laboratory, experiments on TCO layered structures were carried on. Depth profile and chemical state analyses of ZnO/AlO/ZnO layered structures were performed by Secondary Neutral Mass Spectrometry (SNMS) and X-ray photoelectron spectroscopy (XPS). The samples were produced by atomic layer deposition technique with the following layered structure: between a few hundred atomic layers of ZnO was an AlO atomic layer. The SNMS was used for depth

Effects of the annealing duration of the ZnO buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process

Energy Technology Data Exchange (ETDEWEB)

Shin, C.M.; Lee, J.Y.; Heo, J.H.; Park, J.H.; Kim, C.R. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

2009-07-30

In this study, the effects of the annealing duration of a zinc oxide (ZnO) buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process are discussed. A ZnO buffer layer was deposited on p-type Si (1 1 1) substrates by the metal organic chemical vapor deposition (MOCVD) method. After that, ZnO rods were grown on the ZnO-buffer/Si (1 1 1) substrate by a hydrothermal process. In order to determine the optimum annealing duration of the buffer layer for the growth of ZnO rods, durations ranging from 0.5 to 30 min were tried. The morphology and crystal structure of the ZnO/ZnO-buffer/Si (1 1 1) were measured by field emission scanning electron microscopy (FE-SEM) and x-ray diffraction (XRD). The optical properties were investigated by photoluminescence (PL) measurement.

Effects of seed layers on controlling of the morphology of ZnO nanostructures and superhydrophobicity of ZnO nanostructure/stearic acid composite films

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jing; Liu, Zhihua, E-mail: sdwfliu@163.com; Liu, Junqi; E, Lei; Liu, Zhifeng, E-mail: tjulzf@163.com

2016-11-01

Hydrophobic ZnO self-cleaning thin films with the nanobundles and nanocarpets structures fabricated on indium tin oxides (ITO) glass substrate are reported. The water contact angle of ZnO nanobundles and nanocarpets structures (79° and 67° respectively) is higher than that of unmodified ZnO nanorods. A subsequent chemical treatment with stearic acid (SA) contributed to a superhydrophobic surface with a water contact angle of 159°. Its superhydrophobic property is originated from the nanobundles or nanocarpets structures and surface energy of SA/ZnO nanobundles and SA/ZnO nanocarpets composite nanostructures. Moreover, this promising ZnO nanostructured materials show an important application in self-cleaning smart coatings. - Highlights: • PEG and CTAB are firstly introduced to modify the morphology of ZnO seed layers. • ZnO nanobundles and nanocarpets obtained from different seed layers. • Superhydrophobic surfaces obtained by chemcial treatment using SA.

Atomic layer deposition of Al-doped ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro [Department of Chemistry, Aalto University, FI-00076 Aalto (Finland); Department of Physics, Nagoya University, Nagoya 464-8602 (Japan)

2013-01-15

Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al{sub 2}O{sub 3} on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al{sub 2}O{sub 3} phase and no further carrier doping of ZnO is observed.

Crystallinity Improvement of Zn O Thin Film on Different Buffer Layers Grown by MBE

International Nuclear Information System (INIS)

Shao-Ying, T.; Che-Hao, L.; Wen-Ming, Ch.; Yang, C.C.; Po-Ju, Ch.; Hsiang-Chen, W.; Ya-Ping, H.

2012-01-01

The material and optical properties of Zn O thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the Zn O layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality Zn O thin film growth. A Ga N buffer layer slightly increased the quality of the Zn O thin film, but the threading dislocations still stretched along the c-axis of the Ga N layer. The use of Mg O as the buffer layer decreased the surface roughness of the Zn O thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality Zn O thin film growth.

Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE

Directory of Open Access Journals (Sweden)

Shao-Ying Ting

2012-01-01

Full Text Available The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis of the GaN layer. The use of MgO as the buffer layer decreased the surface roughness of the ZnO thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality ZnO thin film growth.

Single-layer ZnMN2 (M = Si, Ge, Sn) zinc nitrides as promising photocatalysts.

Science.gov (United States)

Bai, Yujie; Luo, Gaixia; Meng, Lijuan; Zhang, Qinfang; Xu, Ning; Zhang, Haiyang; Wu, Xiuqiang; Kong, Fanjie; Wang, Baolin

2018-05-30

Searching for two-dimensional semiconductor materials that are suitable for visible-light photocatalytic water splitting provides a sustainable solution to deal with the future energy crisis and environmental problems. Herein, based on first-principles calculations, single-layer ZnMN2 (M = Si, Ge, Sn) zinc nitrides are proposed as efficient photocatalysts for water splitting. Stability analyses show that the single-layer ZnMN2 zinc nitrides exhibit energetic and dynamical stability. The electronic properties reveal that all of the single-layer ZnMN2 zinc nitrides are semiconductors. Interestingly, single-layer ZnSnN2 is a direct band gap semiconductor with a desirable band gap (1.74 eV), and the optical adsorption spectrum confirms its optical absorption in the visible light region. The hydrogen evolution reaction (HER) calculations show that the catalytic activity for single-layer ZnMN2 (M = Ge, Sn) is better than that of single-layer ZnSiN2. Furthermore, the band gaps and band edge positions for the single-layer ZnMN2 zinc nitrides can be effectively tuned by biaxial strain. Especially, single-layer ZnGeN2 can be effectively tuned to match better with the redox potentials of water and enhance the light absorption in the visible light region at a tensile strain of 5%, which is confirmed by the corresponding optical absorption spectrum. Our results provide guidance for experimental synthesis efforts and future searches for single-layer materials suitable for photocatalytic water splitting.

Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO(2) composite/p-AlGaN heterojunction light-emitting diodes.

Science.gov (United States)

Shih, Ying Tsang; Wu, Mong Kai; Li, Wei Chih; Kuan, Hon; Yang, Jer Ren; Shiojiri, Makoto; Chen, Miin Jang

2009-04-22

This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at lambda~380 nm in the n-ZnO/ZnO nanodots-SiO(2) composite/p- Al(0.12)Ga(0.88)N heterojunction light-emitting diode. A SiO(2) layer embedded with ZnO nanodots was prepared on the p-type Al(0.12)Ga(0.88)N using spin-on coating of SiO(2) nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO(2) composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO(2) matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO(2) composite layer. The high quality of the n-ZnO layer was manifested by the well crystallized lattice image in the HRTEM picture and the low-threshold optically pumped stimulated emission. The low refractive index of the ZnO nanodots-SiO(2) composite layer results in the increase in the light extraction efficiency from n-ZnO and the internal optical feedback of UV EL into n-ZnO layer. Consequently, significant enhancement of the UV EL intensity and super-linear increase in the EL intensity, as well as the spectral narrowing, with injection current were observed owing to ASE in the n-ZnO layer.

SIMS depth profiling of rubber-tyre cord bonding layers prepared using 64Zn depleted ZnO

International Nuclear Information System (INIS)

Fulton, W.S.; Sykes, D.E.; Smith, G.C.

2006-01-01

Zinc oxide and copper/zinc sulphide layers are formed during vulcanisation and moulding of rubber to brass-coated steel tyre reinforcing cords. Previous studies have described how zinc diffuses through the rubber-brass interface to form zinc sulphide, and combines with oxygen to create zinc oxide during dezincification. The zinc is usually assumed to originate in the brass of the tyre cord, however, zinc oxide is also present in the rubber formulation. We reveal how zinc from these sources is distributed within the interfacial bonding layers, before and after heat and humidity ageing. Zinc oxide produced using 64 Zn-isotope depleted zinc was mixed in the rubber formulation in place of the natural ZnO and the zinc isotope ratios within the interfacial layers were followed by secondary ion mass spectroscopy (SIMS) depth profiling. Variations in the relative ratios of the zinc isotopes during depth profiling were measured for unaged, heat-aged and humidity-aged wire samples and in each case a relatively large proportion of the zinc incorporated into the interfacial layer as zinc sulphide was shown to have originated from ZnO in the rubber compound

Effects of Doping Concentration on the Structural and Optical Properties of Spin-Coated In-doped ZnO Thin Films Grown on Thermally Oxidized ZnO Film/ZnO Buffer Layer/Mica Substrate

Energy Technology Data Exchange (ETDEWEB)

Kim, Byunggu; Leem, Jae-Young [Inje University, Gimhae (Korea, Republic of)

2017-01-15

ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for 2 h in air. Finally, In-doped ZnO (IZO) thin films with different In concentrations were grown on the oxidized ZnO film/ZnO buffer layer/mica substrates using the sol-gel spin-coating method. All the IZO films showed ZnO peaks with similar intensities. The full width at half maximum values of the ZnO (002) peak for the IZO thin films decreased with an increase in the In concentration to 1 at%, because the crystallinity of the films was enhanced. However, a further increase in the In concentration caused the crystal quality to degrade. This might be attributed to the fact that the higher In doping resulted in an increase in the number of ionized impurities. The Urbach energy (EU) values of the IZO thin film decreased with an increase in the In concentration to 1 at % because of the enhanced crystal quality of the films. The EU values for the IZO thin films increased with the In concentration from 1 at%to 3 at%, reflecting the broadening of localized band tail state near the conduction band edge of the films.

Effects of Doping Concentration on the Structural and Optical Properties of Spin-Coated In-doped ZnO Thin Films Grown on Thermally Oxidized ZnO Film/ZnO Buffer Layer/Mica Substrate

International Nuclear Information System (INIS)

Kim, Byunggu; Leem, Jae-Young

2017-01-01

ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for 2 h in air. Finally, In-doped ZnO (IZO) thin films with different In concentrations were grown on the oxidized ZnO film/ZnO buffer layer/mica substrates using the sol-gel spin-coating method. All the IZO films showed ZnO peaks with similar intensities. The full width at half maximum values of the ZnO (002) peak for the IZO thin films decreased with an increase in the In concentration to 1 at%, because the crystallinity of the films was enhanced. However, a further increase in the In concentration caused the crystal quality to degrade. This might be attributed to the fact that the higher In doping resulted in an increase in the number of ionized impurities. The Urbach energy (EU) values of the IZO thin film decreased with an increase in the In concentration to 1 at % because of the enhanced crystal quality of the films. The EU values for the IZO thin films increased with the In concentration from 1 at%to 3 at%, reflecting the broadening of localized band tail state near the conduction band edge of the films.

Modifying of Cotton Fabric Surface with Nano-ZnO Multilayer Films by Layer-by-Layer Deposition Method

Directory of Open Access Journals (Sweden)

Sarıışık Merih

2010-01-01

Full Text Available Abstract ZnO nanoparticle–based multilayer nanocomposite films were fabricated on cationized woven cotton fabrics via layer-by-layer molecular self-assembly technique. For cationic surface charge, cotton fabrics were pretreated with 2,3-epoxypropyltrimethylammonium chloride (EP3MAC by pad-batch method. XPS and SEM were used to examine the deposited nano-ZnO multilayer films on the cotton fabrics. The nano-ZnO films deposited on cotton fabrics exhibited excellent antimicrobial activity against Staphylococcus aureus bacteria. The results also showed that the coated fabrics with nano-ZnO multilayer films enhanced the protection of cotton fabrics from UV radiation. Physical tests (tensile strength of weft and warp yarns, air permeability and whiteness values were performed on the fabrics before and after the treatment with ZnO nanoparticles to evaluate the effect of layer-by-layer (LbL process on cotton fabrics properties.

Physical characterization of Cu{sub 2}ZnGeSe{sub 4} thin films from annealing of Cu-Zn-Ge precursor layers

Energy Technology Data Exchange (ETDEWEB)

Buffière, M., E-mail: buffiere@imec.be [Imec—Partner in Solliance, Leuven (Belgium); Department of Electrical Engineering (ESAT), KU Leuven, Heverlee (Belgium); ElAnzeery, H. [Imec—Partner in Solliance, Leuven (Belgium); KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Microelectronics System Design department, Nile University, Cairo (Egypt); Oueslati, S.; Ben Messaoud, K. [Imec—Partner in Solliance, Leuven (Belgium); KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Department of Physics, Faculty of Sciences of Tunis, El Manar (Tunisia); Brammertz, G.; Meuris, M. [Imec Division IMOMEC — Partner in Solliance, Diepenbeek (Belgium); Institute for Material Research (IMO) Hasselt University, Diepenbeek (Belgium); Poortmans, J. [Imec—Partner in Solliance, Leuven (Belgium); Department of Electrical Engineering (ESAT), KU Leuven, Heverlee (Belgium)

2015-05-01

Cu{sub 2}ZnGeSe{sub 4} (CZGeSe) can be considered as a potential alternative for wide band gap thin film devices. In this work, CZGeSe thin films were deposited on Mo-coated soda lime glass substrates by sequential deposition of sputtered Cu, Zn and e-beam evaporated Ge layers from elemental targets followed by annealing at high temperature using H{sub 2}Se gas. We report on the effect of the precursor stack order and composition and the impact of the annealing temperature on the physical properties of CZGeSe thin films. The optimal layer morphology was obtained when using a Mo/Cu/Zn/Ge precursor stack annealed at 460 °C. We have observed that the formation of secondary phases such as ZnSe can be prevented by tuning the initial composition of the stack, the stack order and the annealing conditions. This synthesis process allows synthesizing CZGeSe absorber with an optical band gap of 1.5 eV. - Highlights: • Cu{sub 2}ZnGeSe{sub 4} (CZGeSe) thin films were deposited using a two-step process. • CZGeSe dense layers were obtained using a Mo/Cu/Zn/Ge precursor annealed at 460 °C. • Formation of ZnSe can be avoided by tuning the composition and order of the initial stack. • P-type CZGeSe absorber with an optical band gap of 1.5 eV was obtained.

Influence of Zn/Fe Molar Ratio on Optical and Magnetic Properties of ZnO and ZnFe2O4 Nanocrystal as Calcined Products of Layered Double Hydroxides

Directory of Open Access Journals (Sweden)

Abdullah Ahmed Ali Ahmed

2014-01-01

Full Text Available The coprecipitation method has been used to synthesize layered double hydroxide (Zn-Fe-LDH nanostructure at different Zn2+/Fe3+ molar ratios. The structural properties of samples were studied using powder X-ray diffraction (PXRD. LDH samples were calcined at 600°C to produce mixed oxides (ZnO and ZnFe2O4. The crystallite size of mixed oxide was found in the nanometer scale (18.1 nm for ZnFe2O4 and 43.3 nm for ZnO. The photocatalytic activity of the calcination products was investigated using ultraviolet-visible-near infrared (UV-VIS-NIR diffuse reflectance spectroscopy. The magnetic properties of calcined LDHs were investigated using a vibrating sample magnetometer (VSM. The calcined samples showed a paramagnetic behavior for all Zn2+/Fe3+ molar ratios. The effect of molar ratio on magnetic susceptibility of the calcined samples was also studied.

The effects of ZnO buffer layers on the properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition

International Nuclear Information System (INIS)

Kim, K-W; Lugo, F J; Lee, J H; Norton, D P

2012-01-01

The properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition were examined, specifically focusing on the effects of undoped ZnO buffer layers. In particular, buffer layers were grown under different conditions; the transport properties of as-deposited and rapid thermal annealed ZnO:P films were then examined. As-deposited films showed n-type conductivity. After rapid thermal annealing, the film on buffer layer grown at a low temperature showed the conversion of carrier type to p-type for specific growth conditions while the films deposited on buffer layer grown at a high temperature remained n-type regardless of growth condition. The films deposited on buffer layer grown at a low temperature showed higher resistivity and more significant change of the transport properties upon rapid thermal annealing. These results suggest that more dopants are incorporated in films with higher defect density. This is consistent with high resolution x-ray diffraction results for phosphorus doped ZnO films on different buffer layers. In addition, the microstructure of phosphorus doped ZnO films is substantially affected by the buffer layer.

Structural Properties of Zn-ZnO Core-Shell Microspheres Grown by Hot-Filament CVD Technique

Directory of Open Access Journals (Sweden)

R. López

2012-01-01

Full Text Available We report the hot-filament chemical vapor deposition (HFCVD growth of Zn-ZnO core-shell microspheres in the temperature range of 350–650°C only using ZnO pellets as raw material. The samples were characterized by scanning electron microscope (SEM, energy dispersive spectroscopy (EDS, and X-ray diffraction (XRD techniques. SEM micrographs showed the presence of solid microspheres and a Zn-ZnO layer in all samples. The observed heterogeneous morphology on each sample suggested two different growth mechanisms. On the one hand, solid microspheres were formed by means of gas phase nucleation of Zn atoms. The Zn-ZnO layer was formed on the substrate as result of surface reactions. It is possible that Zn microspheres condensed during the natural cooling of the HFCVD reactor as they were observed on the Zn-ZnO layer.

Synthesis of ZnO nanowire arrays on ZnO−TiO{sub 2} mixed oxide seed layer for dye sensitized solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Marimuthu, T. [Advanced Materials and Thin Film Physics Lab, Department of Physics, Alagappa University, Karaikudi (India); Anandhan, N., E-mail: anandhan_kn@rediffmail.com [Advanced Materials and Thin Film Physics Lab, Department of Physics, Alagappa University, Karaikudi (India); Thangamuthu, R. [Electrochemical Materials Science Division, CSIR-Central Electrochemical Research Institute, Karaikudi (India); Mummoorthi, M. [Advanced Materials and Thin Film Physics Lab, Department of Physics, Alagappa University, Karaikudi (India); Ravi, G. [Photonic Crystal Lab, Department of Physics, Alagappa University, Karaikudi (India)

2016-08-25

ZnO nanowire arrays (NWAs) were synthesized on ZnO−TiO{sub 2} mixed oxide seeded FTO conducting glass plate by two-step sol-gel and hydrothermal method, respectively. X-ray diffraction patterns reveal the presence of mixed and hexagonal phases in seed layer and NWAs, respectively. Scanning electron microscope images showed that the FTO glass plate is uniformly covered with grains and a few nanorods in seed layer and dense NWAs are vertically grown on the seed layer. The hexagonal structure and high crystal quality have been confirmed by micro Raman spectra. Photoluminescence spectra also present that NWAs have high crystal quality and less atomic defects. UV spectra indicate that NWAs are absorbed more dye molecules and it has the band gap equal to bulk material. The efficiency of ZnO−TiO{sub 2} mixed oxide seed layer and ZnO NWAs is found to be 0.56 and 0.84% respectively. Electrochemical impedance spectra reveal that NWAs DSSC has high charge transfer recombination resistance than the seed layer DSSC. - Highlights: • ZnO nanowire arrays were synthesized by two-step sol-gel and hydrothermal method. • The crystal structure and crystalline quality of films are confirmed by Raman spectra. • The emission properties of films are investigated by photoluminescence spectra. • ZnO nanowire arrays (NWAs) have higher charge transfer recombination resistance. • The conversion efficiency of the seed layer and NWAs is to be 0.56 and 0.84%.

Control of interfacial intermetallic compounds in Fe–Al joining by Zn addition

Energy Technology Data Exchange (ETDEWEB)

Yang, J. [Key Laboratory of Robot and Welding Automation of Jiangxi Province, School of Mechanical and Electrical Engineering, Nanchang University, Nanchang, Jiangxi 330031 (China); Center for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1 (Canada); Li, Y.L., E-mail: liyulong1112ster@gmail.com [Key Laboratory of Robot and Welding Automation of Jiangxi Province, School of Mechanical and Electrical Engineering, Nanchang University, Nanchang, Jiangxi 330031 (China); Zhang, H. [Key Laboratory of Robot and Welding Automation of Jiangxi Province, School of Mechanical and Electrical Engineering, Nanchang University, Nanchang, Jiangxi 330031 (China); Guo, W. [Center for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1 (Canada); School of Mechanical Engineering and Automation, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China); Zhou, Y. [Center for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1 (Canada)

2015-10-01

By Zn addition to the fusion zone, the interfacial intermetallic compounds (IMCs) of laser Al/steel joint changed from layered Fe{sub 2}Al{sub 5} and needle-like FeAl{sub 3} to layered Fe{sub 2}Al{sub 5−x}Zn{sub x} and dispersed FeZn{sub 10} with minor Al-rich amorphous phase. This resulted in an improvement in the joint strength and the change of failure mode.

ZnO nanostructures as electron extraction layers for hybrid perovskite thin films

Science.gov (United States)

Nikolaidou, Katerina; Sarang, Som; Tung, Vincent; Lu, Jennifer; Ghosh, Sayantani

Optimum interaction between light harvesting media and electron transport layers is critical for the efficient operation of photovoltaic devices. In this work, ZnO layers of different morphologies are implemented as electron extraction and transport layers for hybrid perovskite CH3NH3PbI3 thin films. These include nanowires, nanoparticles, and single crystalline film. Charge transfer at the ZnO/perovskite interface is investigated and compared through ultra-fast characterization techniques, including temperature and power dependent spectroscopy, and time-resolved photoluminescence. The nanowires cause an enhancement in perovskite emission, which may be attributed to increased scattering and grain boundary formation. However, the ZnO layers with decreasing surface roughness exhibit better electron extraction, as inferred from photoluminescence quenching, reduction in the number of bound excitons, and reduced exciton lifetime in CH3NH3PbI3 samples. This systematic study is expected to provide an understanding of the fundamental processes occurring at the ZnO-CH3NH3PbI3 interface and ultimately, provide guidelines for the ideal configuration of ZnO-based hybrid Perovskite devices. This research was supported by National Aeronautics and Space administration (NASA) Grant No: NNX15AQ01A.

Preparation and inhibition properties of molybdate intercalated ZnAlCe layered double hydroxide

Energy Technology Data Exchange (ETDEWEB)

Yan, Huajie; Wang, Jihui, E-mail: jhwang@tju.edu.cn; Zhang, Yu; Hu, Wenbin

2016-09-05

ZnAlCe layered double hydroxide intercalated by molybdate (ZnAlCe−MoO{sub 4} LDH) was successfully synthesized by using co-precipitation method, and the morphology, structure of ZnAlCe−MoO{sub 4} LDH were observed and characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FT-IR) techniques. The inhibition behavior of ZnAlCe−MoO{sub 4} LDH for Q235 steel in 3.5%NaCl solution was determined by polarization curves, electrochemical impedance spectroscopy (EIS), inductively coupled plasma mass spectrometer (ICP-MS) and X-ray photoelectron spectrometer (XPS) methods. The results shows that the synthesized ZnAlCe−MoO{sub 4} LDH has a lamellar structure with a particle size of 0.1–2.0 μm, an average thickness of 30 nm, and a basal plane spacing of 0.898 nm. Compared with the addition of ZnAl layered double hydroxide intercalated by nitrate (ZnAl−NO{sub 3} LDH) and ZnAl layered double hydroxide intercalated by molybdate (ZnAl−MoO{sub 4} LDH) in 3.5% NaCl solution, Q235 steel in 3.5%NaCl + ZnAlCe−MoO{sub 4} LDH solution has a lower corrosion current density, larger polarization resistance and a higher inhibition efficiency. The addition of ZnAlCe−MoO{sub 4} LDH will reduce the chloride concentration in 3.5% NaCl solution by the anion exchanged with molybdate, and improve the corrosion resistance of Q235 steel owing to the formation of passive film with the composition of ferrous or iron molybdate and deposition film with zinc and cerium hydroxides. - Highlights: • ZnAlCe−MoO{sub 4} LDH compound was successfully synthesized by co-precipitation method. • ZnAlCe−MoO{sub 4} LDH has a better inhibition effect to Q235 steel in 3.5%NaCl solution. • The Cl{sup −} ions in solution was partially exchanged with MoO{sub 4}{sup 2−} ions in host layers. • The passive film and deposition film were formed by the release of LDH compound.

Hybrid Organic/ZnO p-n Junctions with n-Type ZnO Grown by Atomic Layer Deposition

Science.gov (United States)

Łuka, G.; Krajewski, T.; Szczerbakow, A.; Łusakowska, E.; Kopalko, K.; Guziewicz, E.; Wachnicki, Ł.; Szczepanik, A.; Godlewski, M.; Fidelus, J. D.

2008-11-01

We report on fabrication of hybrid inorganic-on-organic thin film structures with polycrystalline zinc oxide films grown by atomic layer deposition technique. ZnO films were deposited on two kinds of thin organic films, i.e. pentacene and poly(dimethylosiloxane) elastomer with a carbon nanotube content (PDMS:CNT). Surface morphology as well as electrical measurements of the films and devices were analyzed. The current density versus voltage (I-V) characteristics of ITO/pentacene/ZnO/Au structure show a low-voltage switching phenomenon typical of organic memory elements. The I-V studies of ITO/PDMS:CNT/ZnO/Au structure indicate some charging effects in the system under applied voltages.

Ternary Oxides in the TiO2-ZnO System as Efficient Electron-Transport Layers for Perovskite Solar Cells with Efficiency over 15.

Science.gov (United States)

Yin, Xiong; Xu, Zhongzhong; Guo, Yanjun; Xu, Peng; He, Meng

2016-11-02

Perovskite solar cells, which utilize organometal-halide perovskites as light-harvesting materials, have attracted great attention due to their high power conversion efficiency (PCE) and potentially low cost in fabrication. A compact layer of TiO 2 or ZnO is generally applied as electron-transport layer (ETL) in a typical perovskite solar cell. In this study, we explored ternary oxides in the TiO 2 -ZnO system to find new materials for the ETL. Compact layers of titanium zinc oxides were readily prepared on the conducting substrate via spray pyrolysis method. The optical band gap, valence band maximum and conduction band minimum of the ternary oxides varied significantly with the ratio of Ti to Zn, surprisingly, in a nonmonotonic way. When a zinc-rich ternary oxide was applied as ETL for the device, a PCE of 15.10% was achieved, comparable to that of the device using conventional TiO 2 ETL. Interestingly, the perovskite layer deposited on the zinc-rich ternary oxide is stable, in sharp contrast with that fabricated on a ZnO layer, which will turn into PbI 2 readily when heated. These results indicate that potentially new materials with better performance can be found for ETL of perovskite solar cells in ternary oxides, which deserve more exploration.

ZnO: Hydroquinone superlattice structures fabricated by atomic/molecular layer deposition

International Nuclear Information System (INIS)

Tynell, Tommi; Karppinen, Maarit

2014-01-01

Here we employ atomic layer deposition in combination with molecular layer deposition to deposit crystalline thin films of ZnO interspersed with single layers of hydroquinone in an effort to create hybrid inorganic–organic superlattice structures. The ratio of the ZnO and hydroquinone deposition cycles is varied between 199:1 and 1:1, and the structure of the resultant thin films is verified with X-ray diffraction and reflectivity techniques. Clear evidence of the formation of a superlattice-type structure is observed in the X-ray reflectivity patterns and the presence of organic bonds in the films corresponding to the structure of hydroquinone is confirmed with Fourier transform infrared spectroscopy measurements. We anticipate that hybrid superlattice structures such as the ones described in this work have the potential to be of great importance for future applications where the precise control of different inorganic and organic layers in hybrid superlattice materials is required. - Highlights: • Inorganic–organic superlattices can be made by atomic/molecular layer deposition. • This is demonstrated here for ZnO and hydroquinone (HQ). • The ratio of the ZnO and HQ layers is varied between 199:1 and 14:1. • The resultant thin films are crystalline

ZnO: Hydroquinone superlattice structures fabricated by atomic/molecular layer deposition

Energy Technology Data Exchange (ETDEWEB)

Tynell, Tommi; Karppinen, Maarit, E-mail: maarit.karppinen@aalto.fi

2014-01-31

Here we employ atomic layer deposition in combination with molecular layer deposition to deposit crystalline thin films of ZnO interspersed with single layers of hydroquinone in an effort to create hybrid inorganic–organic superlattice structures. The ratio of the ZnO and hydroquinone deposition cycles is varied between 199:1 and 1:1, and the structure of the resultant thin films is verified with X-ray diffraction and reflectivity techniques. Clear evidence of the formation of a superlattice-type structure is observed in the X-ray reflectivity patterns and the presence of organic bonds in the films corresponding to the structure of hydroquinone is confirmed with Fourier transform infrared spectroscopy measurements. We anticipate that hybrid superlattice structures such as the ones described in this work have the potential to be of great importance for future applications where the precise control of different inorganic and organic layers in hybrid superlattice materials is required. - Highlights: • Inorganic–organic superlattices can be made by atomic/molecular layer deposition. • This is demonstrated here for ZnO and hydroquinone (HQ). • The ratio of the ZnO and HQ layers is varied between 199:1 and 14:1. • The resultant thin films are crystalline.

Atmospheric spatial atomic layer deposition of in-doped ZnO

NARCIS (Netherlands)

Illiberi, A.; Scherpenborg, R.; Roozeboom, F.; Poodt, P.

2014-01-01

Indium-doped zinc oxide (ZnO:In) has been grown by spatial atomic layer deposition at atmospheric pressure (spatial-ALD). Trimethyl indium (TMIn), diethyl zinc (DEZ) and deionized water have been used as In, Zn and O precursor, respectively. The metal content of the films is controlled in the range

Fabrication of hierarchical flower-like porous ZnO nanostructures from layered ZnC2O4·3Zn(OH)2 and gas sensing properties

International Nuclear Information System (INIS)

Cui, Jiashan; Sun, Jianbo; Liu, Xin; Li, Jinwei; Ma, Xinzhi; Chen, Tingting

2014-01-01

ZnO materials with porous and hierarchical flower-like structure were synthesized through mild hydrothermal and simple calcination approach, in which the flower-like layered zinc oxalate hydroxide (ZnC 2 O 4 ·3Zn(OH) 2 ) precursor was first synthesized and then calcined at 600 °C. The obtained products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopic (TEM), Brunauer–Emmett–Teller (BET) and thermogravimetric (TG) analysis. We proposed the possible growth mechanism of the material via studying the time evolution experiment results. In the process of reaction, oxalic acid as a structure-directing agent hydrolyzed and then formed primarily sheets-like intermediate ZnC 2 O 4 ·2H 2 O. Hexamethylenetetramine (HMT) as surfactant, with directional adsorption, leads to the formation of layered zinc oxalate hydroxide precursor. Furthermore, the gas sensitivity also can be characterized, whose results indicated that the synthesized materials had a preferable selectivity to ethanol gas. The fast response rate and reversible performance can be attributed to the produced greater specific surface area produced, which was caused by the porous and hierarchical flower-like structure.

Fabrication of hierarchical flower-like porous ZnO nanostructures from layered ZnC2O4·3Zn(OH)2 and gas sensing properties

Science.gov (United States)

Cui, Jiashan; Sun, Jianbo; Liu, Xin; Li, Jinwei; Ma, Xinzhi; Chen, Tingting

2014-07-01

ZnO materials with porous and hierarchical flower-like structure were synthesized through mild hydrothermal and simple calcination approach, in which the flower-like layered zinc oxalate hydroxide (ZnC2O4·3Zn(OH)2) precursor was first synthesized and then calcined at 600 °C. The obtained products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopic (TEM), Brunauer-Emmett-Teller (BET) and thermogravimetric (TG) analysis. We proposed the possible growth mechanism of the material via studying the time evolution experiment results. In the process of reaction, oxalic acid as a structure-directing agent hydrolyzed and then formed primarily sheets-like intermediate ZnC2O4·2H2O. Hexamethylenetetramine (HMT) as surfactant, with directional adsorption, leads to the formation of layered zinc oxalate hydroxide precursor. Furthermore, the gas sensitivity also can be characterized, whose results indicated that the synthesized materials had a preferable selectivity to ethanol gas. The fast response rate and reversible performance can be attributed to the produced greater specific surface area produced, which was caused by the porous and hierarchical flower-like structure.

Evolution of nuclear structure in neutron-rich odd-Zn isotopes and isomers

Directory of Open Access Journals (Sweden)

C. Wraith

2017-08-01

Full Text Available Collinear laser spectroscopy was performed on Zn (Z=30 isotopes at ISOLDE, CERN. The study of hyperfine spectra of nuclei across the Zn isotopic chain, N=33–49, allowed the measurement of nuclear spins for the ground and isomeric states in odd-A neutron-rich nuclei up to N=50. Exactly one long-lived (>10 ms isomeric state has been established in each 69–79Zn isotope. The nuclear magnetic dipole moments and spectroscopic quadrupole moments are well reproduced by large-scale shell–model calculations in the f5pg9 and fpg9d5 model spaces, thus establishing the dominant term in their wave function. The magnetic moment of the intruder Iπ=1/2+ isomer in 79Zn is reproduced only if the νs1/2 orbital is added to the valence space, as realized in the recently developed PFSDG-U interaction. The spin and moments of the low-lying isomeric state in 73Zn suggest a strong onset of deformation at N=43, while the progression towards 79Zn points to the stability of the Z=28 and N=50 shell gaps, supporting the magicity of 78Ni.

Microwave Synthesized ZnO Nanorod Arrays for UV Sensors: A Seed Layer Annealing Temperature Study.

Science.gov (United States)

Pimentel, Ana; Ferreira, Sofia Henriques; Nunes, Daniela; Calmeiro, Tomas; Martins, Rodrigo; Fortunato, Elvira

2016-04-20

The present work reports the influence of zinc oxide (ZnO) seed layer annealing temperature on structural, optical and electrical properties of ZnO nanorod arrays, synthesized by hydrothermal method assisted by microwave radiation, to be used as UV sensors. The ZnO seed layer was produced using the spin-coating method and several annealing temperatures, ranging from 100 to 500 °C, have been tested. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and spectrophotometry measurements have been used to investigate the structure, morphology, and optical properties variations of the produced ZnO nanorod arrays regarding the seed layer annealing temperatures employed. After the growth of ZnO nanorod arrays, the whole structure was tested as UV sensors, showing an increase in the sensitivity with the increase of seed layer annealing temperature. The UV sensor response of ZnO nanorod arrays produced with the seed layer annealed temperature of 500 °C was 50 times superior to the ones produced with a seed layer annealed at 100 °C.

Synthesis and microstructural characterization of growth direction controlled ZnO nanorods using a buffer layer

International Nuclear Information System (INIS)

Park, Dong Jun; Kim, Dong Chan; Lee, Jeong Yong; Cho, Hyung Koun

2006-01-01

The growth direction and morphology of one-dimensional ZnO nanostructures grown by metal-organic chemical vapour deposition (MOCVD) were modulated by changing the growth temperature of previously deposited ZnO buffer layers that were used as a template. The ZnO nanorods grown on the low-temperature deposited buffer layer were regularly inclined with respect to the substrate surface and show in-plane alignment with azimuthally six-fold symmetry. In contrast, deposition of the buffer layer at higher growth temperature led to the formation of vertically well-aligned ZnO nanorods. In addition, the ZnO nanorods grown on the buffer layer deposited at low growth temperature show a growth direction of [1 0 1-bar 0], unlike the conventional ZnO nanorods showing a growth direction of [0001]. The microstructural analysis and atomic modelling of the formation of regularly inclined nanorods using transmission electron microscopy are presented

Ordered ZnO/AZO/PAM nanowire arrays prepared by seed-layer-assisted electrochemical deposition

International Nuclear Information System (INIS)

Shen, Yu-Min; Pan, Chih-Huang; Wang, Sheng-Chang; Huang, Jow-Lay

2011-01-01

An Al-doped ZnO (AZO) seed layer is prepared on the back side of a porous alumina membrane (PAM) substrate by spin coating followed by annealing in a vacuum at 400 °C. Zinc oxide in ordered arrays mediated by a high aspect ratio and an ordered pore array of AZO/PAM is synthesized. The ZnO nanowire array is prepared via a 3-electrode electrochemical deposition process using ZnSO 4 and H 2 O 2 solutions at a potential of − 1 V (versus saturated calomel electrode) and temperatures of 65 and 80 °C. The microstructure and chemical composition of the AZO seed layer and ZnO/AZO/PAM nanowire arrays are characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). Results indicate that the ZnO/AZO/PAM nanowire arrays were assembled in the nanochannel of the porous alumina template with diameters of 110–140 nm. The crystallinity of the ZnO nanowires depends on the AZO seed layer during the annealing process. The nucleation and growth process of ZnO/AZO/PAM nanowires are interpreted by the seed-layer-assisted growth mechanism.

Research into the electrical property variation of undoped CdTe and ZnTe crystals grown under Te-rich conditions

Energy Technology Data Exchange (ETDEWEB)

Xu, Yadong, E-mail: xyd220@nwpu.edu.cn; Liu, Hang; He, Yihui; Yang, Rui; Luo, Lin; Jie, Wanqi

2014-11-05

Highlights: • Conductivity type and resistivity of undoped Te-rich ZnTe and CdTe are different. • Te{sub i} and V{sub Zn} as the dominant defects account for the p-type low resistivity ZnTe. • Te{sub Cd} as the principle defect leading to the light n-type high resistivity CdTe. • DAP and eA peaks dominate the luminescence with their intensities anti-correlated. - Abstract: Both undoped ZnTe and CdTe bulk single crystals are grown under Te-saturated conditions from the solution and melt, respectively. To give an insight into the variation of the electrical properties, the defects structures in both tellurides are discussed. According to the actual growth velocities and the entire cooling history, tellurium interstitials (Te{sub i}) and Zinc vacancies (V{sub Zn}) are proposed as the dominant grown-in defects, account for the low resistivity of p-type ZnTe. However, relatively high pulling rates and slow cooling-down processes result in tellurium anti-sites (Te{sub Cd}) as the principle grown-in defects, leading to the high resistivity of light n-type CdTe. Further low-temperature (8.6 K) photoluminescence spectra of both tellurides are obtained. The donor–acceptor pair (DAP) and recombination of free electron to neutral acceptor (eA) dominate the luminescence, however, with their intensities are anti-correlated. eA is superior to DAP in undoped Te-rich ZnTe, suggests a high concentration of Te{sub i} or V{sub Zn}. On the contrary, DAP is the principal emission for undoped Te-rich CdTe. In addition, V-line is clearly identified in undoped Te-rich ZnTe, which possibly associated with V{sub Zn} or close Frenkel pair V{sub Zn}–Zn{sub i}.

Bromine-rich Zinc Bromides: Zn6Br12(18-crown-6)2×(Br2)5, Zn4Br8(18-crown-6)2×(Br2)3, and Zn6Br12(18-crown-6)2×(Br2)2.

Science.gov (United States)

Hausmann, David; Feldmann, Claus

2016-06-20

The bromine-rich zinc bromides Zn6Br12(18-crown-6)2×(Br2)5 (1), Zn4Br8(18-crown-6)2×(Br2)3 (2), and Zn6Br12(18-crown-6)2×(Br2)2 (3) are prepared by reaction of ZnBr2, 18-crown-6, and elemental bromine in the ionic liquid [MeBu3N][N(Tf)2] (N(Tf)2 = bis(trifluoromethylsulfonyl)amide). Zn6Br12(18-crown-6)2×(Br2)5 (1) is formed instantaneously by the reaction. Even at room temperature, compound 1 releases bromine, which was confirmed by thermogravimetry (TG) and mass spectrometry (MS). The release of Br2 can also be directly followed by the color and density of the title compounds. With controlled conditions (2 weeks, 25 °C, absence of excess Br2) Zn6Br12(18-crown-6)2×(Br2)5 (1) slowly releases bromine with conconcurrent generation of Zn4Br8(18-crown-6)2×(Br2)3 (2) (in ionic liquid) and Zn6Br12(18-crown-6)2×(Br2)2 (3) (in inert oil). All bromine-rich zinc bromides contain voluminous uncharged (e.g., Zn3Br6(18-crown-6), Zn2Br4(18-crown-6)) or ionic (e.g., [Zn2Br3(18-crown-6)](+), [(Zn2Br6)×(Br2)2](2-)) building units with dibromine molecules between the Zn oligomers and partially interconnecting the Zn-containing building units. Due to the structural similarity, the bromine release is possible via crystal-to-crystal transformation with retention of the crystal shape.

Enhancement of Two-Dimensional Electron-Gas Properties by Zn Polar ZnMgO/MgO/ZnO Structure Grown by Radical-Source Laser Molecular Beam Epitaxy

Directory of Open Access Journals (Sweden)

Li Meng

2015-01-01

Full Text Available A Zn polar ZnMgO/MgO/ZnO structure with low Mg composition Zn1-xMgxO layer (x = 0.05 grown on a-plane (11–20 sapphire by radical-source laser molecular beam epitaxy was reported. The insertion of a thin (1 nm MgO layer between ZnMgO and ZnO layers in the ZnMgO/ZnO 2DEG structures results in an increase of 2DEG sheet density and affects electron mobility slightly. The carrier concentration reached a value as high as 1.1 × 1013 cm−2, which was confirmed by C-V measurements. A high Hall mobility of 3090 cm2/Vs at 10 K and 332 cm2/Vs at RT was observed from Zn0.95Mg0.05O/MgO/ZnO heterostructure. The choice of the thickness of MgO was discussed. The dependence of carrier sheet density of 2DEG on ZnMgO layer thickness was calculated in theory and the theoretical prediction and experimental results agreed well.

Ambient Layer-by-Layer ZnO Assembly for Highly Efficient Polymer Bulk Heterojunction Solar Cells

KAUST Repository

Eita, Mohamed Samir

2015-02-04

The use of metal oxide interlayers in polymer solar cells has great potential because metal oxides are abundant, thermally stable, and can be used in fl exible devices. Here, a layer-by-layer (LbL) protocol is reported as a facile, room-temperature, solution-processed method to prepare electron transport layers from commercial ZnO nanoparticles and polyacrylic acid (PAA) with a controlled and tunable porous structure, which provides large interfacial contacts with the active layer. Applying the LbL approach to bulk heterojunction polymer solar cells with an optimized ZnO layer thickness of H25 nm yields solar cell power-conversion effi ciencies (PCEs) of ≈6%, exceeding the effi ciency of amorphous ZnO interlayers formed by conventional sputtering methods. Interestingly, annealing the ZnO/PAA interlayers in nitrogen and air environments in the range of 60-300 ° C reduces the device PCEs by almost 20% to 50%, indicating the importance of conformational changes inherent to the PAA polymer in the LbL-deposited fi lms to solar cell performance. This protocol suggests a new fabrication method for solution-processed polymer solar cell devices that does not require postprocessing thermal annealing treatments and that is applicable to fl exible devices printed on plastic substrates.

ZnO/CdS bi-layer nanostructures photoelectrode for dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Dalal, Paresh V., E-mail: paresh10dalal@gmail.com [Physics Research Lab, Shri V. S. Naik Arts, Commerce and Science College, Raver-425508 (M. S.) (India); Deshpande, Milind P., E-mail: vishwadeshpande@yahoo.co.in [Department of Physics, Sardar Patel University, Vallabh Vidyanagar-388120 (Gujarat) (India); Solanki, Bharat G., E-mail: bhrt.solanki17@gmail.com; Soni, Saurabh S., E-mail: soni-b21@yahoo.co.in [Department of Chemistry, Sardar Patel University, Vallabh Vidyanagar-388120 (Gujarat) (India)

2016-05-06

Simple chemical deposition method for the synthesis of ZnO/CdS bilayer photoelectrode on fluorine doped tin oxide (FTO) coated glass substrate in aqueous medium at low temperature (< 373K) is described. The different preparative parameters such as deposition time, bath temperature, concentration of precursor solution and, pH of the bath etc. were optimized. Nanograined ZnO was deposited on FTO coated glass substrates by dip-coating method, whereas CdS nanorods were successfully synthesized on pre-deposited ZnO film by Chemical Bath Deposition (CBD) method. The Photovoltaic properties of FTO/ZnO/CdS bilayer photo electrodes were also studied. A maximum short circuit current density of 9.1 mA cm-2 and conversion efficiency 1.05% are observed for ZnO/CdS-10min. Layer, which supports fast electron injection kinetics due to hetero structured nanorod, while minimum values of 0.53mA cm-2 and 0.01% respectively are observed for only ZnO deposited layer.

Effects of buffer layer annealing temperature on the structural and optical properties of hydrothermal grown ZnO

Energy Technology Data Exchange (ETDEWEB)

Zhao, X.Q.; Kim, C.R.; Lee, J.Y.; Heo, J.H.; Shin, C.M. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Lee, H.C. [Department of Mechatronics Engineering, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Jung, W.G. [School of Advanced Materials Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

2009-02-01

ZnO was deposited on bare Si(1 0 0), as-deposited, and annealed ZnO/Si(1 0 0) substrates by hydrothermal synthesis. The effects of a ZnO buffer layer and its thermal annealing on the properties of the ZnO deposited by hydrothermal synthesis were studied. The grain size and root mean square (RMS) roughness values of the ZnO buffer layer increased after thermal annealing of the buffer layer. The effect of buffer layer annealing temperature on the structural and optical properties was investigated by photoluminescence, X-ray diffraction, atomic force microscopy, and scanning electron microscopy. Hydrothermal grown ZnO deposited on ZnO/Si(1 0 0) annealed at 750 deg. C with the concentration of 0.3 M exhibits the best structural and optical properties.

Synthesis and room temperature photoluminescence of ZnO/CTAB ordered layered nanocomposite with flake-like architecture

International Nuclear Information System (INIS)

Wang, Y.D.; Zhang, S.; Ma, C.L.; Li, H.D.

2007-01-01

Flake-like ZnO/surfactant ordered layered nanocomposite has been synthesized by self-assembly at room temperature with the presence of cetyltrimethylammonium bromide (CTAB, CH 3 (CH 2 ) 15 N + (CH 3 ) 3 Br - ) surfactant. The procedure described in this study is attractive since it gives high yields of ordered layered nanocomposite with flake-like architecture. XRD results showed the formation of a layered structure with two layered spacings ca. 18.56 A. SEM and FT-IR spectroscopy were used to further characterize ZnO/CTAB nanolayered composite. The ZnO/CTAB-ordered layered nanocomposite exhibits the room temperature photoluminescence (RTPL) characteristics. It is inferred that the RTPL of ZnO/CTAB-layered nanocomposite might be induced by the interfacial effect between the ZnO and the surfactant

Electrodeposition of ZnO-doped films as window layer for Cd-free CIGS-based solar cells

Science.gov (United States)

Tsin, Fabien; Vénérosy, Amélie; Hildebrandt, Thibaud; Hariskos, Dimitrios; Naghavi, Negar; Lincot, Daniel; Rousset, Jean

2016-02-01

The Cu(In,Ga)Se2 (CIGS) thin film solar cell technology has made a steady progress within the last decade reaching efficiency up to 22.3% on laboratory scale, thus overpassing the highest efficiency for polycrystalline silicon solar cells. High efficiency CIGS modules employ a so-called buffer layer of cadmium sulfide CdS deposited by Chemical Bath Deposition (CBD), which presence and Cd-containing waste present some environmental concerns. A second potential bottleneck for CIGS technology is its window layer made of i-ZnO/ZnO:Al, which is deposited by sputtering requiring expensive vacuum equipment. A non-vacuum deposition of transparent conductive oxide (TCO) relying on simpler equipment with lower investment costs will be more economically attractive, and could increase competitiveness of CIGS-based modules with the mainstream silicon-based technologies. In the frame of Novazolar project, we have developed a low-cost aqueous solution photo assisted electrodeposition process of the ZnO-based window layer for high efficiency CIGS-based solar cells. The window layer deposition have been first optimized on classical CdS buffer layer leading to cells with efficiencies similar to those measured with the sputtered references on the same absorber (15%). The the optimized ZnO doped layer has been adapted to cadmium free devices where the CdS is replaced by chemical bath deposited zinc oxysulfide Zn(S,O) buffer layer. The effect of different growth parameters has been studied on CBD-Zn(S,O)-plated co-evaporated Cu(In,Ga)Se2 substrates provided by the Zentrum für Sonnenenergie-und Wasserstoff-Forschung (ZSW). This optimization of the electrodeposition of ZnO:Cl on CIGS/Zn(S,O) stacks led to record efficiency of 14%, while the reference cell with a sputtered (Zn,Mg)O/ZnO:Al window layer has an efficiency of 15.2%.

Electrodeposition of ZnO window layer for an all-atmospheric fabrication process of chalcogenide solar cell

Science.gov (United States)

Tsin, Fabien; Venerosy, Amélie; Vidal, Julien; Collin, Stéphane; Clatot, Johnny; Lombez, Laurent; Paire, Myriam; Borensztajn, Stephan; Broussillou, Cédric; Grand, Pierre Philippe; Jaime, Salvador; Lincot, Daniel; Rousset, Jean

2015-01-01

This paper presents the low cost electrodeposition of a transparent and conductive chlorine doped ZnO layer with performances comparable to that produced by standard vacuum processes. First, an in-depth study of the defect physics by ab-initio calculation shows that chlorine is one of the best candidates to dope the ZnO. This result is experimentally confirmed by a complete optical analysis of the ZnO layer deposited in a chloride rich solution. We demonstrate that high doping levels (>1020 cm−3) and mobilities (up to 20 cm2 V−1 s−1) can be reached by insertion of chlorine in the lattice. The process developed in this study has been applied on a CdS/Cu(In,Ga)(Se,S)2 p-n junction produced in a pilot line by a non vacuum process, to be tested as solar cell front contact deposition method. As a result efficiency of 14.3% has been reached opening the way of atmospheric production of Cu(In,Ga)(Se,S)2 solar cell. PMID:25753657

Improvement of color purity in white OLED based on Zn(HPB){sub 2} as blue emitting layer

Energy Technology Data Exchange (ETDEWEB)

Kim, Dong-Eun [Department of Electrical Engineering and NTRC, Dong-A University, Busan, 604-714 (Korea, Republic of); Kim, Won-Sam [Department of Chemistry and Institute of Functional Materials, Inje University, Gimhae, 621-749 (Korea, Republic of); Kim, Byoung-Sang [Department of Electrical Engineering and NTRC, Dong-A University, Busan, 604-714 (Korea, Republic of); Lee, Burm-Jong [Department of Chemistry and Institute of Functional Materials, Inje University, Gimhae, 621-749 (Korea, Republic of); Kwon, Young-Soo [Department of Electrical Engineering and NTRC, Dong-A University, Busan, 604-714 (Korea, Republic of)], E-mail: yskwon@dau.ac.kr

2008-04-01

We synthesized zinc (II) [2-(2-hydroxyphenyl)benzoxazole] (Zn(HPB){sub 2}) as blue emitting materials and evaluated in the organic light emitting diodes (OLEDs). The layer of Zn(HPB){sub 2} doped with 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB) (Zn(HPB){sub 2}:DCJTB) as emitters has been demonstrated. The structure of the device is indium-tin-oxide (ITO)/N,N'-bis-(1-naphthl)-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB, 40 nm)/Zn(HPB){sub 2}/Zn(HPB){sub 2}:DCJTB/Alq{sub 3} (20 nm)/LiF/Al. The thickness of Zn(HPB){sub 2} layer was 0, 10, 20, 30 nm at the same time the thickness of Zn(HPB){sub 2}:DCJTB layer were 40, 30, 20, 10 nm. When thickness of Zn(HPB){sub 2} layer was 30 nm and the thickness of Zn(HPB){sub 2}:DCJTB layer was 10 nm, white emission is achieved. The Commission Internationale de l'Eclairage (CIE) coordinates of the white emission are (0.304, 0.332) at an applied voltage of 10.5 V.

Identification of Zn-Bearing Micas and Clays from the Cristal and Mina Grande Zinc Deposits (Bongará Province, Amazonas Region, Northern Peru

Directory of Open Access Journals (Sweden)

Giuseppe Arfè

2017-11-01

Full Text Available Zn-bearing phyllosilicates are common minerals in nonsulfide Zn deposits, but they seldom represent the prevailing economic species. However, even though the presence of Zn-bearing clays is considered as a disadvantage in mineral processing, their characteristics can give crucial information on the genesis of the oxidized mineralization. This research has been carried out on the Mina Grande and Cristal Zn-sulfide/nonsulfide deposits, which occur in the Bongará district (Northern Peru. In both of the deposits, Zn-bearing micas and clays occur as an accessory to the ore minerals. The XRD analyses and scanning electron microscopy with energy dispersive X-ray spectroscopy (SEM-EDS investigations revealed that the Zn-bearing micas that are occurring in both deposits mostly consist of I/S mixed layers of detrital origin, which have been partly altered or overprinted by sauconite during the supergene alteration of sulfides. Sporadic hendricksite was also identified in the Cristal nonsulfide mineral assemblage, whereas at Mina Grande, the fraipontite-zaccagnaite (3R-polytype association was detected. The identified zaccagnaite polytype suggests that both fraipontite and zaccagnaite are genetically related to weathering processes. The hendricksite detected at Cristal is a product of hydrothermal alteration, which is formed during the emplacement of sulfides. The complex nature of the identified phyllosilicates may be considered as evidence of the multiple processes (hydrothermal and supergene that occurred in the Bongará district.

Studying Selective Transparency in ZnS/ Cu/ ZnS Thin Films

International Nuclear Information System (INIS)

Ksibe, A.; Howari, H.; Diab, M.

2009-01-01

Dielectric/ Metal/ Dielectric (DMD) thin films deposited on glass offer of significant energy saving in buildings and can find other applications of advanced materials design. In an effort to reduce the complexity and cost production of DMD films, physical vapor deposition was used for the laboratory manufacture of ZnS/ Cu/ ZnS films on glass. ZnS was used because of its high refractive index, ease of deposition and low cost; Cu was used because of its low absorption in the visible spectrum and its thermal stability. The films produced were of good quality, with transmittance as high as 85%. The ZnS layers were found not only to antireflect the Ag layer, but also to stabilize the ZnS/ Cu/ ZnS films, improve its adherence on glass and increase the film thermal resistance up to 240 C. The influence of annealing on the optical properties was investigated. The experimental results show that the properties of the multilayers are improved with annealing in air. the change of maximum transmission indicates that, with the increase of annealing temperature, maximum transmittance was change. Multilayer films annealed at after 200 C, show a decrease in the maximum transmittance witch might be due to the diffused Cu atoms onto ZnS layer. (author)

Evolution of microstructure and related optical properties of ZnO grown by atomic layer deposition

Directory of Open Access Journals (Sweden)

Adib Abou Chaaya

2013-10-01

Full Text Available A study of transmittance and photoluminescence spectra on the growth of oxygen-rich ultra-thin ZnO films prepared by atomic layer deposition is reported. The structural transition from an amorphous to a polycrystalline state is observed upon increasing the thickness. The unusual behavior of the energy gap with thickness reflected by optical properties is attributed to the improvement of the crystalline structure resulting from a decreasing concentration of point defects at the growth of grains. The spectra of UV and visible photoluminescence emissions correspond to transitions near the band-edge and defect-related transitions. Additional emissions were observed from band-tail states near the edge. A high oxygen ratio and variable optical properties could be attractive for an application of atomic layer deposition (ALD deposited ultrathin ZnO films in optical sensors and biosensors.

ZnSe passivation layer for the efficiency enhancement of CuInS2 quantum dots sensitized solar cells

International Nuclear Information System (INIS)

Peng, Zhuoyin; Liu, Yueli; Zhao, Yinghan; Chen, Keqiang; Cheng, Yuqing; Kovalev, Valery; Chen, Wen

2014-01-01

Highlights: • ZnSe is employed as passivation layer in CuInS 2 quantum dots sensitized solar cells. • Slight red-shift has been occurred in UV–vis absorption spectra with ZnSe coating. • CuInS 2 based solar cells coated by ZnSe have better efficiency than that of ZnS. • Higher rate of charge transport can be produced after coating with ZnSe. -- Abstract: The effect of ZnSe passivation layer is investigated in the CuInS 2 quantum dot sensitized solar cells, which is used to improve the photovoltaic performance. The CuInS 2 quantum dot sensitized TiO 2 photo-anodes are prepared by assembly linking technique, and then deposited by the ZnSe passivation layer using the successive ionic layer absorption and reaction technique. The optical absorption edge and photoluminescence peak have slightly red-shifted after the passivation layer coating. Under solar light illumination, the ZnSe passivation layer based CuInS 2 quantum dot sensitized solar cells have the higher photovoltaic efficiency of 0.95% and incident photon conversion efficiency response than that of pure CuInS 2 based solar cells and ZnS passivation layer based solar cells, as the electron injection rate becomes faster after coating with ZnSe passivation layer

Fabrication of White Organic Light Emitting Diode Using Two Types of Zn-Complexes as an Emitting Layer.

Science.gov (United States)

Kim, Dong-Eun; Kwon, Young-Soo; Shin, Hoon-Kyu

2015-01-01

We have studied white OLED using two types of Zn-complexes as an emitting layer. We synthesized brand new two emissive materials, Zn(HPQ)2 as a yellow emitting material and Zn(HPB)2 as a blue emitting material. The Zn-complexes are low-molecular compounds and stable thermally. The fundamental structures of the fabricated OLED was ITO/NPB (40 nm)/Zn(HPB)2 (30 nm)/Zn(HPQ)2/LiF/Al. We varied the thickness of the Zn(HPQ)2 layer by 20, 30, and 40 nm. When the thickness of the Zn(HPQ)2 layer was 20 nm, the white emission was achieved. The maximum luminance was 12,000 cd/m2 at a current density of 800 mA/cm2. The CIE coordinates of the white emission were (0.319, 0.338) at an applied voltage of 10 V.

Lubrication performance and mechanisms of Mg/Al-, Zn/Al-, and Zn/Mg/Al-layered double hydroxide nanoparticles as lubricant additives

International Nuclear Information System (INIS)

Li, Shuo; Bhushan, Bharat

2016-01-01

Highlights: • Mg/Al-, Zn/Al- and Zn/Mg/Al-layered double hydroxide were synthesized. • Mg/Al-LDH had superior tribological performance compared to other LDHs. • The best thermal stability of Mg/Al-LDH was responsible for its friction property. - Abstract: Solid lubricant particles are commonly used as oil additives for low friction and wear. Mg/Al-, Zn/Al-, and Zn/Mg/Al-layered double hydroxides (LDH) were synthesized by coprecipitation method. The benefits of LDH nanoparticles are that they can be synthesized using chemical methods where size and shape can be controlled, and can be modified organically to allow dispersal in fluids. The LDH nanoparticles were characterized by X-ray diffraction, scanning electron microscope, thermogravimetry, and differential scanning calorimetry. A pin-on-disk friction and wear tester was used for evaluating the friction and wear properties of LDH nanoparticles as lubricant additives. LDH nanoparticles have friction-reducing and anti-wear properties compared to oil without LDHs. Mg/Al-LDH has the best lubrication, possibly due to better thermal stability in severe conditions.

Lubrication performance and mechanisms of Mg/Al-, Zn/Al-, and Zn/Mg/Al-layered double hydroxide nanoparticles as lubricant additives

Energy Technology Data Exchange (ETDEWEB)

Li, Shuo [School of Materials Science and Technology, China University of Geosciences (Beijing), 29 Xueyuan Road, Haidian Distract, Beijing 100083 (China); Nanoprobe Laboratory for Bio- & Nanotechnology and Biomimetics (NLBB), The Ohio State University, 201 W. 19th Avenue Columbus, OH 43210-1142 (United States); Bhushan, Bharat, E-mail: bhushan.2@osu.edu [Nanoprobe Laboratory for Bio- & Nanotechnology and Biomimetics (NLBB), The Ohio State University, 201 W. 19th Avenue Columbus, OH 43210-1142 (United States)

2016-08-15

Highlights: • Mg/Al-, Zn/Al- and Zn/Mg/Al-layered double hydroxide were synthesized. • Mg/Al-LDH had superior tribological performance compared to other LDHs. • The best thermal stability of Mg/Al-LDH was responsible for its friction property. - Abstract: Solid lubricant particles are commonly used as oil additives for low friction and wear. Mg/Al-, Zn/Al-, and Zn/Mg/Al-layered double hydroxides (LDH) were synthesized by coprecipitation method. The benefits of LDH nanoparticles are that they can be synthesized using chemical methods where size and shape can be controlled, and can be modified organically to allow dispersal in fluids. The LDH nanoparticles were characterized by X-ray diffraction, scanning electron microscope, thermogravimetry, and differential scanning calorimetry. A pin-on-disk friction and wear tester was used for evaluating the friction and wear properties of LDH nanoparticles as lubricant additives. LDH nanoparticles have friction-reducing and anti-wear properties compared to oil without LDHs. Mg/Al-LDH has the best lubrication, possibly due to better thermal stability in severe conditions.

Characterization of nanostructures of ZnO and ZnMnO films deposited by successive ionic layer adsorption and reaction method

Energy Technology Data Exchange (ETDEWEB)

Jimenez-Garcia, F.N. [Departamento de Fisica y Matematicas, Universidad Autonoma de Manizales, Antigua Estacion del Ferrocarril, Manizales, Caldas (Colombia); Departamento de Fisica y Quimica, Universidad Nacional de Colombia, Sede Manizales, Campus la Nubia, Manizales, Caldas (Colombia); Espinosa-Arbelaez, D.G. [Departamento de Nanotecnologia, Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Blv. Juriquilla 3001, Juriquilla, Queretaro, C.P. 76230 (Mexico); Posgrado en Ciencia e Ingenieria Materiales, Instituto de Investigacion en Materiales, Universidad Nacional Autonoma de Mexico, Mexico DF (Mexico); Vargas-Hernandez, C. [Departamento de Fisica y Quimica, Universidad Nacional de Colombia, Sede Manizales, Campus la Nubia, Manizales, Caldas (Colombia); Real, A. del [Departamento de Nanotecnologia, Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Blv. Juriquilla 3001, Juriquilla, Queretaro, C.P. 76230 (Mexico); Rodriguez-Garcia, M.E., E-mail: marioga@fata.unam.mx [Departamento de Nanotecnologia, Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Blv. Juriquilla 3001, Juriquilla, Queretaro, C.P. 76230 (Mexico)

2011-09-01

ZnO and ZnMnO thin films were obtained by the successive ionic layer adsorption and reaction (SILAR) method. All thin films were deposited on glass microscope slide. A precursor solution of 0.1 M of ZnCl{sub 2} complexed with ammonium hydroxide and water close to boiling point (92 deg. C) as a second solution was used for the ZnO films. An uncomplexed bath comprised of 0.1 M ZnCl{sub 2}, 0.1 M MnCl{sub 2,} and a second solution of 0.1 ml of NH{sub 4}OH with water close to boiling point was used for the ZnMnO films. The film samples were deposited by the SILAR method and annealed at 200 deg. C for 15 min. These samples were characterized using X-Ray Diffraction (XRD), Scanning Electron Microscopy with Energy Dispersive Spectroscopy (EDS), and Atomic Force Microscope. Atomic absorption was used to determine quantitatively the amount of Mn incorporated into the films. According to the XRD patterns these films were polycrystalline with wurtzite hexagonal structure. The morphology of the ZnO films constituted by rice-like and flower-like structures changed significantly to nanosheet structures with the Mn incorporation. The Mn inclusion in a ZnO structure was less than 4% according to the results from EDS, XRD, and atomic absorption.

Characterization of nanostructures of ZnO and ZnMnO films deposited by successive ionic layer adsorption and reaction method

International Nuclear Information System (INIS)

Jimenez-Garcia, F.N.; Espinosa-Arbelaez, D.G.; Vargas-Hernandez, C.; Real, A. del; Rodriguez-Garcia, M.E.

2011-01-01

ZnO and ZnMnO thin films were obtained by the successive ionic layer adsorption and reaction (SILAR) method. All thin films were deposited on glass microscope slide. A precursor solution of 0.1 M of ZnCl 2 complexed with ammonium hydroxide and water close to boiling point (92 deg. C) as a second solution was used for the ZnO films. An uncomplexed bath comprised of 0.1 M ZnCl 2 , 0.1 M MnCl 2, and a second solution of 0.1 ml of NH 4 OH with water close to boiling point was used for the ZnMnO films. The film samples were deposited by the SILAR method and annealed at 200 deg. C for 15 min. These samples were characterized using X-Ray Diffraction (XRD), Scanning Electron Microscopy with Energy Dispersive Spectroscopy (EDS), and Atomic Force Microscope. Atomic absorption was used to determine quantitatively the amount of Mn incorporated into the films. According to the XRD patterns these films were polycrystalline with wurtzite hexagonal structure. The morphology of the ZnO films constituted by rice-like and flower-like structures changed significantly to nanosheet structures with the Mn incorporation. The Mn inclusion in a ZnO structure was less than 4% according to the results from EDS, XRD, and atomic absorption.

Intercalation of vanadate in Ni, Zn layered hydroxyacetates

International Nuclear Information System (INIS)

Rojas, Ricardo; Barriga, Cristobalina; Ulibarri, M.A.; Rives, Vicente

2004-01-01

Interlayer acetate anions in layered double hydroxyacetates of Ni 2+ and Zn 2+ have been exchanged by oxovanadates following three synthetic routes (at 60 deg. C, under hydrothermal conditions and after preswelling with caprylate anions) and different pH; direct exchange at room temperature was not successful. Complete exchange was achieved under adequated conditions, and the precise nature of the interlayer anion depends on the pH during exchange: at low pH (4.5), the presence of α-VO 3 chains, with anchoring (grafting) of the species to the hydroxide layers, is proposed. At higher pH (9.5) V 2 O 7 4- species are present in the interlayer. Thermal decomposition of these vanadate-intercalated products leads to formation of orthorhombic Ni 2+ and Zn 2+ vanadates, together with NiO

Sims Characterisation of ZnO Layer Prepared By Pulsed Laser Deposition

Directory of Open Access Journals (Sweden)

Andrej Vincze

2005-01-01

Full Text Available New material development requires new technologies to create and prepare basic material for semiconductor industry and device applications. Materials have given properties, which exhibit particulary small tolerances. One of the most important and promising material is recently ZnO. ZnO has specific properties for near UV emission and absorption optical devices. The pulsed laser deposition (PLD is one of the methods to prepare this type of material. The aim of this paper is to compare properties of ZnO layers deposited from pure Zn target in oxygen atmosphere and the analysis of their surface properties by secondary ion mass spectroscopy (SIMS, atomic force microscopy (AFM and scanning electron microscopy (SEM.

Magnetic nanoparticles as a seed layer for growing ZnO nanowires for optical applications

International Nuclear Information System (INIS)

AlSalhi, M S; Atif, M; Ansari, Anees A; Khun, K; Ibupoto, Z H; Willander, M

2013-01-01

In the present work, cerium oxide CeO 2 nanoparticles were synthesised by sol-gel method and used for the growth of ZnO nanorods. The synthesised nanoparticles were studied by x-ray diffraction technique [XRD]. Furthermore, these nanoparticles were used as seed layer for the growth of ZnO nanorods by following the hydrothermal growth method. The structural study of ZnO nanorods was carried out by using field emission scanning electron microscopy [FESEM], and x-ray diffraction [XRD] techniques. This study demonstrated that the grown ZnO nanorods are well align, uniform, good in crystal quality and possess diameter of less than 200 nm. Energy dispersive x-rays [EDX] revealed that the ZnO nanorods are only composed of zinc, cerium as seed atom and oxygen atoms and no any other impurity in the grown nanorods. Moreover, photoluminescence [PL] approach was applied for the optical characterisation and it was observed that the near-band-edge emission [NBE] was same to that of zinc acetate seed layer, however the green emission and orange/red emission peaks were slightly raised due to possible higher level of defects in the cerium oxide seeded ZnO nanorods. This study provides an alternative approach for the synthesis of controlled ZnO nanorods using cerium oxide nanoparticles as seed nucleation layer which in reverse describe the application of these nanoparticles as well as due to controlled morphology of ZnO nanorods the performance of nanodevices based on ZnO can be increased using these particles as seed.

Investigation of thin ZnO layers in view of laser desorption-ionization

Energy Technology Data Exchange (ETDEWEB)

Grechnikov, A A; Borodkov, A S [Vernadsky Institute of Geochemistry and Analytical Chemistry, Russian Academy of Sciences, 19 Kosygin Str., 119991 Moscow (Russian Federation); Georgieva, V B [Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); Alimpiev, S S; Nikiforov, S M; Simanovsky, Ya O [General Physics Institute, Russian Academy of Sciences, 38 Vavilov Str., 119991 Moscow (Russian Federation); Dimova-Malinovska, D; Angelov, O I, E-mail: lazarova@issp.bas.b [Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria)

2010-04-01

Thin zinc oxide films (ZnO) were developed as a matrix-free platform for surface assisted laser desorption-ionization (SALDI) time-of-flight mass spectrometry. The ZnO films were deposited by RF magnetron sputtering of ZnO ceramic targets in Ar atmospheres on monocrystalline silicon. The generation under UV (355 nm) laser irradiation of positive ions of atenolol, reserpine and gramicidin S from the ZnO layers deposited was studied. All analytes tested were detected as protonated molecules with no or very structure-specific fragmentation. The mass spectra obtained showed low levels of chemical background noise. All ZnO films studied exhibited high stability and good reproducibility. The detection limits for test analytes are in the 10 femtomol range.

Use of different Zn precursors for the deposition of Zn(S,O) buffer layers by chemical bath for chalcopyrite based Cd-free thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Saez-Araoz, R.; Lux-Steiner, M.C. [Hahn Meitner Institut, Berlin (Germany); Freie Universitaet Berlin, Berlin (Germany); Ennaoui, A.; Kropp, T.; Veryaeva, E. [Hahn Meitner Institut, Berlin (Germany); Niesen, T.P. [AVANCIS GmbH and Co. KG, Munich (Germany)

2008-10-15

Progress in fabricating Cu(In,Ga)(S,Se){sub 2} (CIGSSe) solar cells with Zn(S,O) buffer layers prepared by chemical bath deposition (CBD) is discussed. The effect of different Zn salt precursors on solar cell device performance is investigated using production scale CIGSSe absorbers provided by AVANCIS GmbH and Co. KG. The CBD process has been developed at the Hahn-Meitner-Institut (HMI) using zinc nitrate, zinc sulphate or zinc chloride as zinc precursor. An average efficiency of 14.2{+-}0.8% is obtained by using one-layer CBD Zn(S,O) The dominant recombination path for well performing solar cells is discussed based on the results obtained from temperature dependent J(V) analysis. The structure and morphology of buffer layers deposited using zinc nitrate and zinc sulphate has been studied by means of transmission electron micrographs of glass/Mo/CIGSSe/Zn(S,O) structures. Results show a conformal coverage of the absorber by a Zn(S,O) layer of 15-25 nm consisting of nanocrystals with radii of {proportional_to}5 nm. XAES analysis of the buffer layer reveals a similar surface composition for buffer layers deposited with zinc nitrate and zinc sulphate. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Directed Vertical Diffusion of Photovoltaic Active Layer Components into Porous ZnO-Based Cathode Buffer Layers.

Science.gov (United States)

Kang, Jia-Jhen; Yang, Tsung-Yu; Lan, Yi-Kang; Wu, Wei-Ru; Su, Chun-Jen; Weng, Shih-Chang; Yamada, Norifumi L; Su, An-Chung; Jeng, U-Ser

2018-04-01

Cathode buffer layers (CBLs) can effectively further the efficiency of polymer solar cells (PSCs), after optimization of the active layer. Hidden between the active layer and cathode of the inverted PSC device configuration is the critical yet often unattended vertical diffusion of the active layer components across CBL. Here, a novel methodology of contrast variation with neutron and anomalous X-ray reflectivity to map the multicomponent depth compositions of inverted PSCs, covering from the active layer surface down to the bottom of the ZnO-based CBL, is developed. Uniquely revealed for a high-performance model PSC are the often overlooked porosity distributions of the ZnO-based CBL and the differential diffusions of the polymer PTB7-Th and fullerene derivative PC 71 BM of the active layer into the CBL. Interface modification of the ZnO-based CBL with fullerene derivative PCBEOH for size-selective nanochannels can selectively improve the diffusion of PC 71 BM more than that of the polymer. The deeper penetration of PC 71 BM establishes a gradient distribution of fullerene derivatives over the ZnO/PCBE-OH CBL, resulting in markedly improved electron mobility and device efficiency of the inverted PSC. The result suggests a new CBL design concept of progressive matching of the conduction bands. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

ZnO buffer layer for metal films on silicon substrates

Science.gov (United States)

Ihlefeld, Jon

2014-09-16

Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

Temperature dependence of carrier transfer and exciton localization in ZnO/MgZnO heterostructure

Energy Technology Data Exchange (ETDEWEB)

Zhao Dongxu [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)]. E-mail: dxzhao2000@yahoo.com.cn; Li Binghui [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Center for Advanced Optoelectronic Functional Material Research, Northeast Normal University, Changchun 130024 (China); Wu Chunxia [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences (China); Lu Youming [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Shen Dezhen [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Zhang Jiying [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Fan Xiwu [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)

2006-07-15

MgZnO/ZnO heterostructure was fabricated on sapphire substrate by plasma assistant molecular beam epitaxy. The micro-photoluminescence spectra of sample are reported, which shows that different emission peaks would appear when the laser beam focuses different deepness in the film. A carrier tunneling process from the MgZnO capping layer to ZnO layer was observed by the measured temperature dependence of photoluminescence spectra. This induces the emission intensity of the ZnO grew monotonically from 81 to 103 K.

ZnSe passivation layer for the efficiency enhancement of CuInS{sub 2} quantum dots sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Peng, Zhuoyin; Liu, Yueli; Zhao, Yinghan; Chen, Keqiang; Cheng, Yuqing [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 (China); Kovalev, Valery [Department of Mechanics and Mathematics, Moscow State University named after M.V. Lomonosov, Leninskie Gory 1, 119992 Moscow (Russian Federation); Chen, Wen, E-mail: chenw@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 (China)

2014-02-25

Highlights: • ZnSe is employed as passivation layer in CuInS{sub 2} quantum dots sensitized solar cells. • Slight red-shift has been occurred in UV–vis absorption spectra with ZnSe coating. • CuInS{sub 2} based solar cells coated by ZnSe have better efficiency than that of ZnS. • Higher rate of charge transport can be produced after coating with ZnSe. -- Abstract: The effect of ZnSe passivation layer is investigated in the CuInS{sub 2} quantum dot sensitized solar cells, which is used to improve the photovoltaic performance. The CuInS{sub 2} quantum dot sensitized TiO{sub 2} photo-anodes are prepared by assembly linking technique, and then deposited by the ZnSe passivation layer using the successive ionic layer absorption and reaction technique. The optical absorption edge and photoluminescence peak have slightly red-shifted after the passivation layer coating. Under solar light illumination, the ZnSe passivation layer based CuInS{sub 2} quantum dot sensitized solar cells have the higher photovoltaic efficiency of 0.95% and incident photon conversion efficiency response than that of pure CuInS{sub 2} based solar cells and ZnS passivation layer based solar cells, as the electron injection rate becomes faster after coating with ZnSe passivation layer.

A facile mechanochemical approach to synthesize Zn-Al layered double hydroxide

Energy Technology Data Exchange (ETDEWEB)

Qu, Jun, E-mail: forsjun@whut.edu.cn [School of Resources and Environmental Engineering, Wuhan University of Technology, Luoshi Road 122, Wuhan, Hubei 430070 (China); He, Xiaoman; Chen, Min; Huang, Pengwu [School of Resources and Environmental Engineering, Wuhan University of Technology, Luoshi Road 122, Wuhan, Hubei 430070 (China); Zhang, Qiwu, E-mail: zhangqw@whut.edu.cn [School of Resources and Environmental Engineering, Wuhan University of Technology, Luoshi Road 122, Wuhan, Hubei 430070 (China); Liu, Xinzhong [College of Ecological Environment and Urban Construction, Fujian University of Technology, Fuzhou 350118 (China)

2017-06-15

In this study, a mechanochemical route to synthesize Zn-Al layered double hydroxide (LDH) was introduced, in which Zn basic carbonate and Al hydroxide were first dry milled into an activated state and then agitated in water to obtain the final products. The as-prepared samples were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), Thermogravimetry (TG) and Scanning electron microscopy (SEM). The products possessed a high crystallinity of Zn–Al LDH phase without any other impurities, proving a facile and effective preparation of Zn–Al LDH by using non-heating mechanochemical approach. - Highlights: • A non-heating mechanochemical route to synthesize Zn-Al LDH. • The products possessed high crystalline Zn-Al LDH phase. • No emission of other impurities or wastewater.

Influence of ZnO seed layer precursor molar ratio on the density of interface defects in low temperature aqueous chemically synthesized ZnO nanorods/GaN light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Alnoor, Hatim, E-mail: hatim.alnoor@liu.se; Iandolo, Donata; Willander, Magnus; Nur, Omer [Department of Science and Technology (ITN), Linköping University, SE-601 74 Norrköping (Sweden); Pozina, Galia; Khranovskyy, Volodymyr; Liu, Xianjie [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-583 81 Linköping (Sweden)

2016-04-28

Low temperature aqueous chemical synthesis (LT-ACS) of zinc oxide (ZnO) nanorods (NRs) has been attracting considerable research interest due to its great potential in the development of light-emitting diodes (LEDs). The influence of the molar ratio of the zinc acetate (ZnAc): KOH as a ZnO seed layer precursor on the density of interface defects and hence the presence of non-radiative recombination centers in LT-ACS of ZnO NRs/GaN LEDs has been systematically investigated. The material quality of the as-prepared seed layer as quantitatively deduced by the X-ray photoelectron spectroscopy is found to be influenced by the molar ratio. It is revealed by spatially resolved cathodoluminescence that the seed layer molar ratio plays a significant role in the formation and the density of defects at the n-ZnO NRs/p-GaN heterostructure interface. Consequently, LED devices processed using ZnO NRs synthesized with molar ratio of 1:5 M exhibit stronger yellow emission (∼575 nm) compared to those based on 1:1 and 1:3 M ratios as measured by the electroluminescence. Furthermore, seed layer molar ratio shows a quantitative dependence of the non-radiative defect densities as deduced from light-output current characteristics analysis. These results have implications on the development of high-efficiency ZnO-based LEDs and may also be helpful in understanding the effects of the ZnO seed layer on defect-related non-radiative recombination.

Atomic layer deposition of B-doped ZnO using triisopropyl borate as the boron precursor and comparison with Al-doped ZnO

NARCIS (Netherlands)

Garcia - Alonso, D.; Potts, S.E.; Helvoirt, van C.A.A.; Verheijen, M.A.; Kessels, W.M.M.

2015-01-01

Doped ZnO films are an important class of transparent conductive oxides, with many applications demanding increased growth control and low deposition temperatures. Therefore, the preparation of B-doped ZnO films by atomic layer deposition (ALD) at 150 °C was studied. The B source was triisopropyl

Luminescence properties of ZnO layers grown on Si-on-insulator substrates

International Nuclear Information System (INIS)

Kumar, Bhupendra; Gong, Hao; Vicknesh, S.; Chua, S. J.; Tripathy, S.

2006-01-01

The authors report on the photoluminescence properties of polycrystalline ZnO thin films grown on compliant silicon-on-insulator (SOI) substrates by radio frequency magnetron sputtering. The ZnO thin films on SOI were characterized by micro-Raman and photoluminescence (PL) spectroscopy. The observation of E 2 high optical phonon mode near 438 cm -1 in the Raman spectra of the ZnO samples represents the wurtzite crystal structure. Apart from the near-band-edge free exciton (FX) transition around 3.35 eV at 77 K, the PL spectra of such ZnO films also showed a strong defect-induced violet emission peak in the range of 3.05-3.09 eV. Realization of such ZnO layers on SOI would be useful for heterointegration with SOI-based microelectronics and microelectromechanical systems

Precision mass measurements on neutron-rich Zn isotopes and their consequences on the astrophysical r-process

International Nuclear Information System (INIS)

Baruah, Sudarshan

2008-07-01

The rapid neutron-capture or the r-process is responsible for the origin of about half of the neutron-rich atomic nuclei in the universe heavier than iron. For the calculation of the abundances of those nuclei, atomic masses are required as one of the input parameters with very high precision. In the present work, the masses of the neutron rich Zn isotopes (A=71 to 81) lying in the r-process path have been measured in the ISOLTRAP experiment at ISOLDE/CERN. The mass of 81 Zn has been measured directly for the rst time. The half-lives of the nuclides ranged from 46.5 h ( 72 Zn) down to 290 ms ( 81 Zn). In case of all the nuclides, the relative mass uncertainty (Δm=m) achieved was in the order of 10 -8 corresponding to a 100-fold improvement in precision over previous measurements. (orig.)

Growth of vertically aligned ZnO nanorods using textured ZnO films

Directory of Open Access Journals (Sweden)

Meléndrez Manuel

2011-01-01

Full Text Available Abstract A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100 substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells. PACS 61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.

Antibacterial Composite Layers on Ti: Role of ZnO Nanoparticles

Directory of Open Access Journals (Sweden)

Roguska A.

2016-03-01

Full Text Available Problem of Post-operative infections of implant materials caused by bacterial adhesion to their surfaces is very serious. Enhancement of antibacterial properties is potentially beneficial for biomaterials value. Therefore, the metallic and metallic oxide nanoparticles attract particular attention as antimicrobial factors. The aim of this work was to create nanotubular (NT oxide layers on Ti with the addition of ZnO nanoparticles, designed for antibacterial biomedical coatings. Antimicrobial activities of titanium, TiO2 NT and ZnO/TiO2 NT surfaces were evaluated against bacterial strain typical for orthopaedic infections: S. epidermidis. TiO2 NT alone killed the free bacterial cells significantly but promoted their adhesion to the surfaces. The presence of moderate amount of ZnO nanoparticles significantly reduced the S. epidermidis cells adhesion and viability of bacterial cells in contact with modified surfaces. However, higher amount of loaded nanoZnO showed the reduced antimicrobial properties than the medium amount, suggesting the overdose effect.

Improved ITO thin films for photovoltaic applications with a thin ZnO layer by sputtering

International Nuclear Information System (INIS)

Herrero, J.; Guillen, C.

2004-01-01

The improvement of the optical and electrical characteristics of indium tin oxide (ITO) layers is pursued to achieve a higher efficiency in its application as frontal electrical contacts in thin film photovoltaic devices. In order to take advantage of the polycrystalline structure of ZnO films as growth support, the properties of ITO layers prepared at room temperature by sputtering onto bare and ZnO-coated substrates have been analyzed using X-ray diffraction, optical and electrical measurements. It has been found that by inserting a thin ZnO layer, the ITO film resistivity can be reduced as compared to that of a single ITO film with similar optical transmittance. The electrical quality improvement is related to ITO grain growth enhancement onto the polycrystalline ZnO underlayer

Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer

International Nuclear Information System (INIS)

Onuma, T.; Chichibu, S.F.; Uedono, A.; Yoo, Y.-Z.; Chikyow, T.; Sota, T.; Kawasaki, M.; Koinuma, H.

2004-01-01

Nonradiative photoluminescence (PL) lifetime (τ nr ) and point defect density in the (0001) ZnO epilayer grown on (111) Si substrates by laser-assisted molecular-beam epitaxy (L-MBE) using a (0001) ZnS epitaxial buffer layer were compared with those in the ZnO films on (111) and (001) Si substrates prepared by direct transformation of ZnS epilayers on Si by thermal oxidation [Yoo et al., Appl. Phys. Lett. 78, 616 (2001)]. Both the ZnO films exhibited excitonic reflectance anomalies and corresponding PL peaks at low temperature, and the density or size of vacancy-type point defects (Zn vacancies), which were measured by the monoenergetic positron annihilation measurement, in the L-MBE epilayer was lower than that in the films prepared by the oxidation transformation. The ZnO epilayer grown on a (0001) ZnS epitaxial buffer on (111) Si exhibited longer τ nr of 105 ps at room temperature

Precision mass measurements on neutron-rich Zn isotopes and their consequences on the astrophysical r-process

Energy Technology Data Exchange (ETDEWEB)

Baruah, Sudarshan

2008-07-15

The rapid neutron-capture or the r-process is responsible for the origin of about half of the neutron-rich atomic nuclei in the universe heavier than iron. For the calculation of the abundances of those nuclei, atomic masses are required as one of the input parameters with very high precision. In the present work, the masses of the neutron rich Zn isotopes (A=71 to 81) lying in the r-process path have been measured in the ISOLTRAP experiment at ISOLDE/CERN. The mass of {sup 81}Zn has been measured directly for the rst time. The half-lives of the nuclides ranged from 46.5 h ({sup 72}Zn) down to 290 ms ({sup 81}Zn). In case of all the nuclides, the relative mass uncertainty ({delta}m=m) achieved was in the order of 10{sup -8} corresponding to a 100-fold improvement in precision over previous measurements. (orig.)

The influence of ZnO incorporation on the aqueous leaching characteristics of a borosilicate glass

Science.gov (United States)

Vance, E. R.; Gregg, D. J.; Karatchevtseva, I.; Griffiths, G. J.; Olufson, K.; Rees, Gregory J.; Hanna, John V.

2017-10-01

With increasing ZnO content, short term aqueous durability enhancement of all elements in borosilicate glasses containing 1.0 and 3.85 wt% ZnO was evident in 7-day PCT-B tests. In 14-day MCC-1 type leach tests conducted at 90 °C, surface alteration was very clear in the undoped glass via the formation of strongly altered amorphous material which tended to spall off the surface. No sign of crystallinity was detected by grazing incidence X-ray diffraction or electron microscopy of the surface layers and the surface material was very rich in silica. For the ZnO-bearing glasses, significant growth of particles following PCT leaching for 7 days was observed, due to a build-up of surface ZnO-containing Si-rich material and possible agglomeration. This alteration layer was also observed in MCC-1 type experiments in which cross-section SEM-EDS data were obtained. Raman, infrared and 11B and 29Si MAS NMR spectroscopy showed only slight changes in boron speciation on the addition of up to 9.1 wt% ZnO. Bulk positron annihilation lifetime spectra (PALS) of glasses containing 0-3.85 wt% ZnO could be analysed with three distinct lifetimes and also showed only slight differences. These results indicate that the basic glass structure was essentially not influenced by the ZnO content and that the passivation of the alteration layer is promoted by ZnO content.

Luminescence spectra of CdSe/ZnSe double layers of quantum dots

Energy Technology Data Exchange (ETDEWEB)

Reznitsky, Alexander; Permogorov, Sergei; Korenev, Vladimir V.; Sedova, Irina; Sorokin, Sergey; Sitnikova, Alla; Ivanov, Sergei [A.F. Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Klochikhin, Albert [B.P. Konstantinov Nuclear Physics Institute, St. Petersburg (Russian Federation)

2009-12-15

We have studied the emission spectra and structural properties of double CdSe/ZnSe quantum dot (QD) sheet structures grown by molecular beam epitaxy in order to elucidate the mechanisms of the electronic and strain field interaction between the QD planes. The thickness of the ZnSe barrier separating the CdSe sheets was in the range of 10-60 monolayers (ML) in the set of samples studied. We have found that coupling between dots in adjacent layers becomes relatively strong in CdSe/ZnSe double layers structures with 25-27 ML barrier, while it is rather weak when the barrier thickness exceeds 30 ML. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Application of Thin ZnO ALD Layers in Fiber-Optic Fabry-Pérot Sensing Interferometers

Directory of Open Access Journals (Sweden)

Daria Majchrowicz

2016-03-01

Full Text Available In this paper we investigated the response of a fiber-optic Fabry-Pérot sensing interferometer with thin ZnO layers deposited on the end faces of the optical fibers forming the cavity. Standard telecommunication single-mode optical fiber (SMF-28 segments were used with the thin ZnO layers deposited by Atomic Layer Deposition (ALD. Measurements were performed with the interferometer illuminated by two broadband sources operating at 1300 nm and 1550 nm. Reflected interference signal was acquired by an optical spectrum analyzer while the length of the air cavity was varied. Thickness of the ZnO layers used in the experiments was 50 nm, 100 nm, and 200 nm. Uncoated SMF-28 fiber was also used as a reference. Based on the results of measurements, the thickness of the ZnO layers and the length of the cavity were selected in order to achieve good visibility. Following, the interferometer was used to determine the refractive index of selected liquids.

Superhydrophobic ZnAl double hydroxide nanostructures and ZnO films on Al and glass substrates

Energy Technology Data Exchange (ETDEWEB)

De, Debasis, E-mail: debasis.de@bcrec.ac.in [Electronics and Instrumentation Engineering Department, Dr. B C Roy Engineering College, Durgapur, West Bengal 713206 (India); Sarkar, D.K. [Centre Universitaire de Recherche sur l' Aluminium (CURAL), L' Université du Québec à Chicoutimi, 555 Blvd. Université, Chicoutimi, Saguenay, Québec G7H 2B1 (Canada)

2017-01-01

Superhydrophobic nanostructured ZnAl: layered double hydroxides (LDHs) and ZnO films have been fabricated on Al and glass substrates, respectively, by a simple and cost effective chemical bath deposition technique. Randomly oriented hexagonal patterned of ZnAl: LDHs thin nanoplates are clearly observed on Al-substrate in the scanning electron microscopic images. The average size of these hexagonal plates is ∼4 μm side and ∼30 nm of thickness. While on the glass substrate, a oriented hexagonal patterned ZnO nanorods (height ∼5 μm and 1 μm diameter) are observed and each rod is further decorated throughout the top few nanometers with several nanosteps. At the top of the nanorod, a perfectly hexagonal patterned ZnO surface with ∼250 nm sides is observed. The tendency to form hexagonal morphological features is due to the hexagonal crystal structure of ZnO confirmed from X-ray diffraction patterns and transmission electron microscopy image. The ZnAl: LDHs and/or ZnO coated substrates have been passivated by using stearic acid (SA) molecules. Infrared spectra of passivated ZnAl: LDHs coated substrates confirm the presence of SA. X-ray diffraction pattern also corroborates the results of infrared spectrum. The contact angle of the as prepared samples is zero. The superhydrophobicity is achieved by observing contact angle of ∼161° with a hysteresis of ∼4° for Al-substrate. On the glass substrate, a higher contact angle of ∼168° with a lower hysteresis of ∼3° is observed. A lower surface roughness of ∼4.93 μm is measured on ZnAl: LDHs surface layer on the Al substrate as compare to a higher surface roughness of 6.87 μm measured on ZnO layer on glass substrate. The superhydrophobicity of passivated nanostructured films on two different substrates is observed due to high surface roughness and low surface energy. - Highlights: • ZnAl: layered double hydroxides (LDHs) nanoplates are fabricated on Al substrate. • ZnO nanorods are fabricated on

ZnO/Cu/ZnO multilayer films: Structure optimization and investigation on photoelectric properties

International Nuclear Information System (INIS)

Liu Xiaoyu; Li Yingai; Liu Shi; Wu Honglin; Cui Haining

2012-01-01

A series of ZnO/Cu/ZnO multilayer films has been fabricated from zinc and copper metallic targets by simultaneous RF and DC magnetron sputtering. Numerical simulation of the optical properties of the multilayer films has been carried out in order to guide the experimental work. The influences of the ZnO and Cu layer thicknesses, and of O 2 /Ar ratio on the photoelectric and structural properties of the films were investigated. The optical and electrical properties of the multilayers were studied by optical spectrometry and four point probe measurements, respectively. The structural properties were investigated using X-ray diffraction. The performance of the multilayers as transparent conducting coatings was compared using a figure of merit. In experiments, the thickness of the ZnO layers was varied between 4 and 70 nm and those of Cu were between 8 and 37 nm. The O 2 /Ar ratios range from 1:5 to 2:1. Low sheet resistance and high transmittance were obtained when the film was prepared using an O 2 /Ar ratio of 1:4 and a thickness of ZnO (60 nm)/Cu (15 nm)/ZnO (60 nm). - Highlights: ► ZnO/Cu/ZnO films were fabricated from zinc and copper targets by sputtering. ► Transmittance reaches maximum when top and bottom ZnO thicknesses are nearly equal. ► Sheet resistance increases with increasing ZnO layer thickness. ► Variation in sheet resistance with oxygen/argon ratio is due to interface effect.

Corrosion resistance of Zn-Al layered double hydroxide/poly(lactic acid) composite coating on magnesium alloy AZ31

Science.gov (United States)

Zeng, Rong-Chang; Li, Xiao-Ting; Liu, Zhen-Guo; Zhang, Fen; Li, Shuo-Qi; Cui, Hong-Zhi

2015-12-01

A Zn-Al layered double hydroxide (ZnAl-LDH) coating consisted of uniform hexagonal nano-plates was firstly synthesized by co-precipitation and hydrothermal treatment on the AZ31 alloy, and then a poly(lactic acid) (PLA) coating was sealed on the top layer of the ZnAl-LDH coating using vacuum freeze-drying. The characteristics of the ZnAl-LDH/PLA composite coatings were investigated by means of XRD, SEM, FTIR and EDS. The corrosion resistance of the coatings was assessed by potentiodynamic polarization and electrochemical impedance spectroscopy (EIS). The results showed that the ZnAl-LDH coating contained a compact inner layer and a porous outer layer, and the PLA coating with a strong adhesion to the porous outer layer can prolong the service life of the ZnAl-LDH coating. The excellent corrosion resistance of this composite coating can be attributable to its barrier function, ion-exchange and self-healing ability.

Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties

International Nuclear Information System (INIS)

Park, Helen Hejin; Jayaraman, Ashwin; Heasley, Rachel; Yang, Chuanxi; Hartle, Lauren; Gordon, Roy G.; Mankad, Ravin; Haight, Richard; Gunawan, Oki; Mitzi, David B.

2014-01-01

Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were incorporated with aluminum to adjust the carrier concentration. The electron carrier concentration increased up to one order of magnitude from 10 19 to 10 20 cm −3 with aluminum incorporation and sulfur content in the range of 0 ≤ S/(Zn+Al) ≤ 0.16. However, the carrier concentration decreased by five orders of magnitude from 10 19 to 10 14 cm −3 for S/(Zn+Al) = 0.34 and decreased even further when S/(Zn+Al) > 0.34. Such tunable electrical properties are potentially useful for graded buffer layers in thin-film photovoltaic applications

Epitaxial growth of ZnO layers on (111) GaAs substrates by laser molecular beam epitaxy

International Nuclear Information System (INIS)

Ding Jian; Zhang Di; Konomi, Takaharu; Saito, Katsuhiko; Guo Qixin

2012-01-01

ZnO layers were grown on (111) GaAs substrates by laser molecular epitaxy at substrate temperatures between 200 and 550 °C. X-ray diffraction analysis revealed that c-axis of ZnO epilayer with a wurtzite structure is perpendicular to the substrate surface. X-ray rocking curves and Raman spectroscopy showed that the crystal quality of ZnO epilayers depends on the substrate temperature during the growth. Strong near-band-edge emission in the UV region without any deep-level emissions was observed from the ZnO epilayers at room temperature. The results indicate that laser molecular beam epitaxy is a promising growth method for obtaining high-quality ZnO layers on (111) GaAs substrates.

Atomic Layer Deposition of Nickel on ZnO Nanowire Arrays for High-Performance Supercapacitors.

Science.gov (United States)

Ren, Qing-Hua; Zhang, Yan; Lu, Hong-Liang; Wang, Yong-Ping; Liu, Wen-Jun; Ji, Xin-Ming; Devi, Anjana; Jiang, An-Quan; Zhang, David Wei

2018-01-10

A novel hybrid core-shell structure of ZnO nanowires (NWs)/Ni as a pseudocapacitor electrode was successfully fabricated by atomic layer deposition of a nickel shell, and its capacitive performance was systemically investigated. Transmission electron microscopy and X-ray photoelectron spectroscopy results indicated that the NiO was formed at the interface between ZnO and Ni where the Ni was oxidized by ZnO during the ALD of the Ni layer. Electrochemical measurement results revealed that the Ti/ZnO NWs/Ni (1500 cycles) electrode with a 30 nm thick Ni-NiO shell layer had the best supercapacitor properties including ultrahigh specific capacitance (∼2440 F g -1 ), good rate capability (80.5%) under high current charge-discharge conditions, and a relatively better cycling stability (86.7% of the initial value remained after 750 cycles at 10 A g -1 ). These attractive capacitive behaviors are mainly attributed to the unique core-shell structure and the combined effect of ZnO NW arrays as short charge transfer pathways for ion diffusion and electron transfer as well as conductive Ni serving as channel for the fast electron transport to Ti substrate. This high-performance Ti/ZnO NWs/Ni hybrid structure is expected to be one of a promising electrodes for high-performance supercapacitor applications.

Synthesis optimisation and characterisation of the organic-inorganic layered materials ZnS(m-xylylenediamine){sub 1/2} and ZnS(p-xylylenediamine){sub 1/2}

Energy Technology Data Exchange (ETDEWEB)

Luberda-Durnaś, K. [Institute of Geological Sciences PAS, Research Centre in Krakow, Senacka 1, Krakow 31-002 (Poland); Guillén, A. González [Faculty of Chemistry, Jagiellonian University, Ingardena 3, Krakow 30-060 (Poland); Łasocha, W., E-mail: lasocha@chemia.uj.edu.pl [Jerzy Haber Institute of Catalysis and Surface Chemistry PAS, Niezapominajek 8, Krakow 30-239 (Poland); Faculty of Chemistry, Jagiellonian University, Ingardena 3, Krakow 30-060 (Poland)

2016-06-15

Hybrid organic-inorganic layered materials of the type ZnS(amine){sub 1/2}, where amine=m-xylylenediamine (MXDA) or p-xylylenediamine (PXDA), were synthesised using a simple solvothermal method. Since the samples crystallised in the form of very fine powder, X-ray powder diffraction techniques were used for structural characterisation. The crystal structure studies, involving direct methods, show that both compounds crystallised in the orthorhombic crystal system, but in different space groups: ZnS(MXDA){sub 1/2} in non-centrosymmetric Ccm2{sub 1}, ZnS(PXDA){sub 1/2} in centrosymmetric Pcab. The obtained materials are built according to similar orders: semiconducting monolayers with the formula ZnS, parallel to the (010) plane, are separated by diamines. The organic and inorganic fragments are connected by covalent bonds between metal atoms of the layers and nitrogen atoms of the amino groups. The optical properties of the hybrid materials differ from those of their bulk counterpart. In both compounds a blue-shift of about 0.8 or 0.9 eV was observed with reference to the bulk phase of ZnS. - Highlights: • New hybrid compounds: ZnS(MXDA){sub 1/2} and ZnS(PXDA){sub 1/2} were obtained. • Hybrids were studied using XRD, TG/DSC, XRK, SEM, UV–vis spectroscopy. • Structures of both materials were solved by powder diffraction methods.

Oxidant-Dependent Thermoelectric Properties of Undoped ZnO Films by Atomic Layer Deposition

KAUST Repository

Kim, Hyunho

2017-02-27

Extraordinary oxidant-dependent changes in the thermoelectric properties of undoped ZnO thin films deposited by atomic layer deposition (ALD) have been observed. Specifically, deionized water and ozone oxidants are used in the growth of ZnO by ALD using diethylzinc as a zinc precursor. No substitutional atoms have been added to the ZnO films. By using ozone as an oxidant instead of water, a thermoelectric power factor (σS) of 5.76 × 10 W m K is obtained at 705 K for undoped ZnO films. In contrast, the maximum power factor for the water-based ZnO film is only 2.89 × 10 W m K at 746 K. Materials analysis results indicate that the oxygen vacancy levels in the water- and ozone-grown ZnO films are essentially the same, but the difference comes from Zn-related defects present in the ZnO films. The data suggest that the strong oxidant effect on thermoelectric performance can be explained by a mechanism involving point defect-induced differences in carrier concentration between these two oxides and a self-compensation effect in water-based ZnO due to the competitive formations of both oxygen and zinc vacancies. This strong oxidant effect on the thermoelectric properties of undoped ZnO films provides a pathway to improve the thermoelectric performance of this important material.

Structural and elemental characterization of high efficiency Cu2ZnSnS4 solar cells

Science.gov (United States)

Wang, Kejia; Shin, Byungha; Reuter, Kathleen B.; Todorov, Teodor; Mitzi, David B.; Guha, Supratik

2011-01-01

We have carried out detailed microstructural studies of phase separation and grain boundary composition in Cu2ZnSnS4 based solar cells. The absorber layer was fabricated by thermal evaporation followed by post high temperature annealing on hot plate. We show that inter-reactions between the bottom molybdenum and the Cu2ZnSnS4, besides triggering the formation of interfacial MoSx, results in the out-diffusion of Cu from the Cu2ZnSnS4 layer. Phase separation of Cu2ZnSnS4 into ZnS and a Cu-Sn-S compound is observed at the molybdenum-Cu2ZnSnS4 interface, perhaps as a result of the compositional out-diffusion. Additionally, grain boundaries within the thermally evaporated absorber layer are found to be either Cu-rich or at the expected bulk composition. Such interfacial compound formation and grain boundary chemistry likely contributes to the lower than expected open circuit voltages observed for the Cu2ZnSnS4 devices.

Zn2(TeO3Br2

Directory of Open Access Journals (Sweden)

Mats Johnsson

2008-05-01

Full Text Available Single crystals of dizinc tellurium dibromide trioxide, Zn2(TeO3Br2, were synthesized via a transport reaction in sealed evacuated silica tubes. The compound has a layered crystal structure in which the building units are [ZnO4Br] distorted square pyramids, [ZnO2Br2] distorted tetrahedra, and [TeO3E] tetrahedra (E being the 5s2 lone pair of Te4+ joined through sharing of edges and corners to form layers of no net charge. Bromine atoms and tellurium lone pairs protrude from the surfaces of each layer towards adjacent layers. This new compound Zn2(TeO3Br2 is isostructural with the synthetic compounds Zn2(TeO3Cl2, CuZn(TeO32, Co2(TeO3Br2 and the mineral sophiite, Zn2(SeO3Cl2.

CZTS absorber layer for thin film solar cells from electrodeposited metallic stacked precursors (Zn/Cu-Sn)

Energy Technology Data Exchange (ETDEWEB)

Khalil, M.I., E-mail: mdibrahim.khalil@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Atici, O. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Lucotti, A. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Binetti, S.; Le Donne, A. [Department of Materials Science and Solar Energy Research Centre (MIB-SOLAR), University of Milano- Bicocca, Via Cozzi 53, 20125 Milano (Italy); Magagnin, L., E-mail: luca.magagnin@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy)

2016-08-30

Highlights: • CZTS absorber layer was fabricated by electrodeposition—annealing route from stacked bilayer precursor (Zn/Cu-Sn). • Different characterization techniques have ensured the well formed Kesterite CZTS along the film thickness also. • Two different excitation wavelengths of laser lines (514.5 and 785 nm) have been used for the Raman characterization of the films. • No significant Sn loss is observed in CZTS films after the sulfurization of the stacked bilayer precursors. • Photoluminescence spectroscopy reveals the PL peak of CZTS at 1.15 eV at low temperature (15 K). - Abstract: In the present work, Kesterite-Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were successfully synthesized from stacked bilayer precursor (Zn/Cu-Sn) through electrodeposition-annealing route. Adherent and homogeneous Cu-poor, Zn-rich stacked metal Cu-Zn-Sn precursors with different compositions were sequentially electrodeposited, in the order of Zn/Cu-Sn onto Mo foil substrates. Subsequently, stacked layers were soft annealed at 350 °C for 20 min in flowing N{sub 2} atmosphere in order to improve intermixing of the elements. Then, sulfurization was completed at 585 °C for 15 min in elemental sulfur environment in a quartz tube furnace with N{sub 2} atmosphere. Morphological, compositional and structural properties of the films were investigated using SEM, EDS and XRD methods. Raman spectroscopy with two different excitation lines (514.5 and 785 nm), has been carried out on the sulfurized films in order to fully characterize the CZTS phase. Higher excitation wavelength showed more secondary phases, but with low intensities. Glow discharge optical emission spectroscopy (GDOES) has also been performed on films showing well formed Kesterite CZTS along the film thickness as compositions of the elements do not change along the thickness. In order to investigate the electronic structure of the CZTS, Photoluminescence (PL) spectroscopy has been carried out on the films, whose

Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties

Energy Technology Data Exchange (ETDEWEB)

Park, Helen Hejin; Jayaraman, Ashwin; Heasley, Rachel; Yang, Chuanxi; Hartle, Lauren; Gordon, Roy G., E-mail: gordon@chemistry.harvard.edu [Harvard University, Cambridge, Massachusetts 02138 (United States); Mankad, Ravin; Haight, Richard; Gunawan, Oki [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Mitzi, David B. [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Duke University, Durham, North Carolina 27708 (United States)

2014-11-17

Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were incorporated with aluminum to adjust the carrier concentration. The electron carrier concentration increased up to one order of magnitude from 10{sup 19} to 10{sup 20} cm{sup −3} with aluminum incorporation and sulfur content in the range of 0 ≤ S/(Zn+Al) ≤ 0.16. However, the carrier concentration decreased by five orders of magnitude from 10{sup 19} to 10{sup 14} cm{sup −3} for S/(Zn+Al) = 0.34 and decreased even further when S/(Zn+Al) > 0.34. Such tunable electrical properties are potentially useful for graded buffer layers in thin-film photovoltaic applications.

Hydrostatic-pressure studies of confined transitions in cubic Zn1-xCdxSe/ZnSe strained-layer quantum wells

International Nuclear Information System (INIS)

Thomas, R.J.; Chandrasekhar, H.R.; Chandrasekhar, M.; Samarth, N.; Luo, H.; Furdyna, J.

1992-01-01

Photoluminescence spectra of cubic Zn 0.82 Cd 0.18 Se quantum wells of widths 30, 60, and 200 A are studied as a function of hydrostatic pressure (0--60 kbar) at 80 K. The pressure coefficients of heavy-hole excitons are found to decrease with increasing well width. The photoluminescence energies of the ZnSe barrier and cap layers are also observed to shift as a function of hydrostatic pressure, providing a measure of the pressure coefficient of the direct gap in this material

Cd-free buffer layer materials on Cu2ZnSn(SxSe1-x)4: Band alignments with ZnO, ZnS, and In2S3

Science.gov (United States)

Barkhouse, D. Aaron R.; Haight, Richard; Sakai, Noriyuki; Hiroi, Homare; Sugimoto, Hiroki; Mitzi, David B.

2012-05-01

The heterojunctions formed between Cu2ZnSn(SxSe1-x)4 (CZTSSe) and three Cd-free n-type buffers, ZnS, ZnO, and In2S3, were studied using femtosecond ultraviolet photoemission and photovoltage spectroscopy. The electronic properties including the Fermi level location at the interface, band bending in the CZTSSe substrate, and valence and conduction band offsets were determined and correlated with device properties. We also describe a method for determining the band bending in the buffer layer and demonstrate this for the In2S3/CZTSSe system. The chemical bath deposited In2S3 buffer is found to have near optimal conduction band offset (0.15 eV), enabling the demonstration of Cd-free In2S3/CZTSSe solar cells with 7.6% power conversion efficiency.

Effect of the thickness of Zn(BTZ)2 emitting layer on the electroluminescent spectra of white organic light-emitting diodes

International Nuclear Information System (INIS)

Zhu, F.J.; Hua, Y.L.; Yin, S.G.; Deng, J.C.; Wu, K.W.; Niu, X.; Wu, X.M.; Petty, M.C.

2007-01-01

White organic light-emitting diodes (OLEDs) are fabricated with a simple bilayer structure: ITO/TPD/ Zn(BTZ) 2 /Al. White emission is composed of two parts: one is 470 nm, which originates from exciton emission in Zn(BTZ) 2 emitting layer; the other is 580 nm, which originates from exciplexes formation at the interface of TPD and Zn(BTZ) 2 . Specially, the thickness of Zn(BTZ) 2 layer effects the relative intensity of two emissions. When the Zn(BTZ) 2 layer becomes thin (or thick), the 470 nm (or 580 nm) emission intensity turns into weak (or strong). Finally, We successfully fabricated pure white OLED when the thickness of Zn(BTZ) 2 layer was 65 nm

Low-threshold pure UV electroluminescence from n-ZnO:Al/i-layer/n-GaN heterojunction

International Nuclear Information System (INIS)

Li Songzhan; Fang Guojia; Long Hao; Wang Haoning; Huang Huihui; Mo Xiaoming; Zhao Xingzhong

2012-01-01

Ultraviolet (UV) electroluminescence (EL) of n-ZnO:Al (AZO)/i-layer/n-GaN heterojunctions with different intrinsic layers has been obtained. Rectifying behavior and EL spectra of the heterojunctions are investigated at room temperature. Under positive voltage, a dominant UV emission peak around ∼370 nm is observed for both AZO/i-ZnO/n-GaN and AZO/i-MgO/n-GaN heterojunctions. Nevertheless, the UV emission peak intensity of AZO/i-MgO/n-GaN heterojunction is much stronger than that of AZO/i-ZnO/n-GaN heterojunction at the same voltage. The threshold voltage of AZO/i-MgO/n-GaN heterostructured device is as low as 2.3 V. The difference of EL spectra and the emission mechanism in these devices are discussed. - Highlights: ► UV electroluminescence of n-ZnO:Al/i-layer/n-GaN heterojunctions has been obtained. ► Under positive voltage, a dominant UV emission peak around ∼370 nm is observed for both heterojunctions. ► The UV emission peak intensity of the heterojunction with i-MgO layer is much stronger than that with i-ZnO layer at the same voltage. ► The threshold voltage of n-ZnO:Al/i-MgO/n-GaN heterostructured device is as low as 2.3 V.

Transport Properties of ZnSe- ITO Hetero Junction

Science.gov (United States)

Ichibakase, Tsuyoshi

In this report, ITO(Indium Tin Oxide) was used on the glass substrates as the transparent electrode, and ZnSe layer was prepared by the vacuum deposition on this ITO. Then, the electrical characteristics of this sample were investigated by mans of the electric current transport analysis. The sample that ZnSe was prepared as 3.4 μm in case of ITO-ZnSe sample, has high density level at the junction surface. The ITO-ZnSe junction has two type of diffusion current. However, the ITO-ZnSe sample that ZnSe layer was prepared as 0.1 μm can be assumed as the ohmic contact, and ITO-ZnSe(0.1μm) -CdTe sample shows the avalanche breakdown, and it is considered that the avalanche breakdown occurs in CdTe layer. It is difficult to occur the avalanche breakdown, if ZnSe-CdTe junction has high-density level and CdTe layer has high-density defect. Hence, the ZnSe-CdTe sample that CdTe layer was prepared on ITO-ZnSe(0.1μm) substrate has not high-density level at the junction surface, and the CdTe layer with little lattice imperfection can be prepared. It found that ITO-ZnSe(0.1μm) substrate is available for the II-VI compounds semiconductor device through above analysis result.

Structural and optical properties of ZnMgO nanostructures formed by Mg in-diffused ZnO nanowires

International Nuclear Information System (INIS)

Pan, C.-J.; Hsu, H.-C.; Cheng, H.-M.; Wu, C.-Y.; Hsieh, W.-F.

2007-01-01

ZnMgO nanostructures with wurtzite phase were prepared by thermal diffusion of Mg into the ZnO nanowires. As ZnO light-emitting devices have been operated by using ZnMgO layers as energy barrier layers to confine the carriers, it is essential to realize the characterization of ZnMgO particularly. In this work, the Mg content in Zn 1 -x Mg x O alloy determined by X-ray diffraction (XRD) and photoluminescence (PL) shows a good coincidence. The variation of lattice constant and the blueshift of near-band-edge emission indicate that Zn 2+ ions are successfully substituted by Mg 2+ ions in the ZnO lattice. In Raman-scattering studies, the change of E 2 (high) phonon line shape in ZnO:Mg nanostructures reveals the microscopic substitutional disorder. In addition to the host phonons of ZnO, two additional bands around 383 and 510 cm -1 are presumably attributed to the Mg-related vibrational modes. - Graphical abstract: We reported the synthesis of the ZnMgO nanostructures prepared by a simple vapor transport method. Magnesium-related anomalous modes are observed by Raman spectra for the first time in ZnMgO system

Zn2(TeO3)Br2

Science.gov (United States)

Zhang, Dong; Johnsson, Mats

2008-01-01

Single crystals of dizinc tellurium dibromide trioxide, Zn2(TeO3)Br2, were synthesized via a transport reaction in sealed evacuated silica tubes. The compound has a layered crystal structure in which the building units are [ZnO4Br] distorted square pyramids, [ZnO2Br2] distorted tetra­hedra, and [TeO3 E] tetra­hedra (E being the 5s 2 lone pair of Te4+) joined through sharing of edges and corners to form layers of no net charge. Bromine atoms and tellurium lone pairs protrude from the surfaces of each layer towards adjacent layers. This new compound Zn2(TeO3)Br2 is isostructural with the synthetic compounds Zn2(TeO3)Cl2, CuZn(TeO3)2, Co2(TeO3)Br2 and the mineral sophiite, Zn2(SeO3)Cl2. PMID:21202162

Design Of A Bi-Functional α-Fe2O3/Zn2SiO4:Mn2+ By Layer-By-Layer Assembly Method

Directory of Open Access Journals (Sweden)

Yu Ri

2015-06-01

Full Text Available This work describes the design of bi-functional α-Fe2O3/Zn2SiO4:Mn2+ using a two-step coating process. We propose a combination of pigments (α-Fe2O3 and phosphor (Zn2SiO4:Mn2+ glaze which is assembled using a layer-by-layer method. A silica-coated α-Fe2O3 pigment was obtained by a sol-gel method and a Zn2+ precursor was then added to the silica-coated α-Fe2O3 to create a ZnO layer. Finally, the Zn2SiO4:Mn2+ layer was prepared with the addition of Mn2+ ions to serve as a phosphor precursor in the multi-coated α-Fe2O3, followed by annealing at a temperature above 1000°C. Details of the phase structure, color and optical properties of the multi-functional α-Fe2O3/Zn2SiO4:Mn2+ were characterized by transmission electron microscopy and X-ray diffraction analyses.

Development of n-ZnO/p-Si single heterojunction solar cell with and without interfacial layer

Science.gov (United States)

Hussain, Babar

The conversion efficiency of conventional silicon (Si) photovoltaic cells has not been improved significantly during last two decades but their cost decreased dramatically during this time. However, the higher price-per-watt of solar cells is still the main bottleneck in their widespread use for power generation. Therefore, new materials need to be explored for the fabrication of solar cells potentially with lower cost and higher efficiency. The n-type zinc oxide (n-ZnO) and p-type Si (p-Si) based single heterojunction solar cell (SHJSC) is one of the several attempts to replace conventional Si single homojunction solar cell technology. There are three inadequacies in the literature related to n-ZnO/p-Si SHJSC: (1) a detailed theoretical analysis to evaluate potential of the solar cell structure, (2) inconsistencies in the reported value of open circuit voltage (VOC) of the solar cell, and (3) lower value of experimentally achieved VOC as compared to theoretical prediction based on band-bending between n-ZnO and p-Si. Furthermore, the scientific community lacks consensus on the optimum growth parameters of ZnO. In this dissertation, I present simulation and experimental results related to n-ZnO/p-Si SHJSC to fill the gaps mentioned above. Modeling and simulation of the solar cell structure are performed using PC1D and AFORS-HET software taking practical constraints into account to explore the potential of the structure. Also, unnoticed benefits of ZnO in solar cells such as an additional antireflection (AR) effect and low temperature deposition are highlighted. The growth parameters of ZnO using metal organic chemical vapor deposition and sputtering are optimized. The structural, optical, and electrical characterization of ZnO thin films grown on sapphire and Si substrates is performed. Several n-ZnO/p-Si SHJSC devices are fabricated to confirm the repeatability of the VOC. Moreover, the AR effect of ZnO while working as an n-type layer is experimentally verified

Correlation of Defect-Related Optoelectronic Properties in Zn5(OH6(CO32/ZnO Nanostructures with Their Quasi-Fractal Dimensionality

Directory of Open Access Journals (Sweden)

J. Antonio Paramo

2015-01-01

Full Text Available Hydrozincite (Zn5(OH6(CO32 is, among others, a popular precursor used to synthesize nanoscale ZnO with complex morphologies. For many existing and potential applications utilizing nanostructures, performance is determined by the surface and subsurface properties. Current understanding of the relationship between the morphology and the defect properties of nanocrystalline ZnO and hydrozincite systems is still incomplete. Specifically, for the latter nanomaterial the structure-property correlations are largely unreported in the literature despite the extensive use of hydrozincite in the synthesis applications. In our work, we addressed this issue by studying precipitated nanostructures of Zn5(OH6(CO32 with varying quasi-fractal dimensionalities containing relatively small amounts of a ZnO phase. Crystal morphology of the samples was accurately controlled by the growth time. We observed a strong correlation between the morphology of the samples and their optoelectronic properties. Our results indicate that a substantial increase of the free surface in the nanocrystal samples generates higher relative concentration of defects, consistent with the model of defect-rich surface and subsurface layers.

Biofunctionalization of carbon nanotubes/chitosan hybrids on Ti implants by atom layer deposited ZnO nanostructures

Energy Technology Data Exchange (ETDEWEB)

Zhu, Yizhou; Liu, Xiangmei [Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei Key Laboratory of Polymer Materials, School of Materials Science & Engineering, Hubei University, Wuhan 430062 (China); Yeung, Kelvin W.K. [Division of Spine Surgery, Department of Orthopaedics & Traumatology, Li Ka Shing Faculty of Medicine, The University of Hong Kong, Pokfulam, Hong Kong (China); Chu, Paul K. [Department of Physics & Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China); Wu, Shuilin, E-mail: shuilin.wu@gmail.com [Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei Key Laboratory of Polymer Materials, School of Materials Science & Engineering, Hubei University, Wuhan 430062 (China)

2017-04-01

Highlights: • Carbon naonotubes/chitosan/ZnO coating was first constructed on Ti implants. • This system endowed Ti implants with excellent self-antibacterial activity. • The amount of Zn could be precisely controlled by atom layer deposition. • This system could regulate cell behaviors on metallic implants. - Abstract: One-dimensional (1D) nanostructures of ZnO using atomic layer deposition (ALD) on chitosan (CS) modified carbon nanotubes (CNTs) were first introduced onto the surfaces of biomedical implants. When the content of ZnO is not sufficient, CNTs can strengthen the antibacterial activity against E. coli and S. aureus by 8% and 39%, respectively. CS can improve the cytocompatibility of CNTs and ZnO. The amount of Zn content can be controlled by changing the cycling numbers of ALD processes. This hybrid coating can not only endow medical implants with high self-antibacterial efficacy against Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) of over 73% and 98%, respectively, but also regulate the proliferation and osteogenic differentiation of osteoblasts by controlling the amount of ZnO.

Biofunctionalization of carbon nanotubes/chitosan hybrids on Ti implants by atom layer deposited ZnO nanostructures

International Nuclear Information System (INIS)

Zhu, Yizhou; Liu, Xiangmei; Yeung, Kelvin W.K.; Chu, Paul K.; Wu, Shuilin

2017-01-01

Highlights: • Carbon naonotubes/chitosan/ZnO coating was first constructed on Ti implants. • This system endowed Ti implants with excellent self-antibacterial activity. • The amount of Zn could be precisely controlled by atom layer deposition. • This system could regulate cell behaviors on metallic implants. - Abstract: One-dimensional (1D) nanostructures of ZnO using atomic layer deposition (ALD) on chitosan (CS) modified carbon nanotubes (CNTs) were first introduced onto the surfaces of biomedical implants. When the content of ZnO is not sufficient, CNTs can strengthen the antibacterial activity against E. coli and S. aureus by 8% and 39%, respectively. CS can improve the cytocompatibility of CNTs and ZnO. The amount of Zn content can be controlled by changing the cycling numbers of ALD processes. This hybrid coating can not only endow medical implants with high self-antibacterial efficacy against Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) of over 73% and 98%, respectively, but also regulate the proliferation and osteogenic differentiation of osteoblasts by controlling the amount of ZnO.

Numerical study of the influence of ZnTe thickness on CdS/ZnTe solar cell performance

Science.gov (United States)

Skhouni, Othmane; El Manouni, Ahmed; Mari, Bernabe; Ullah, Hanif

2016-05-01

At present most of II-VI semiconductor based solar cells use the CdTe material as an absorber film. The simulation of its performance is realized by means of various numerical modelling programs. We have modelled a solar cell based on zinc telluride (ZnTe) thin film as absorber in substitution to the CdTe material, which contains the cadmium element known by its toxicity. The performance of such photovoltaic device has been numerically simulated and the thickness of the absorber layer has been optimized to give the optimal conversion efficiency. A photovoltaic device consisting of a ZnTe layer as absorber, CdS as the buffer layer and ZnO as a window layer was modelled through Solar Cell Capacitance Simulator Software. Dark and illuminated I-V characteristics and the results for different output parameters of ZnO/CdS/ZnTe solar cell were analyzed. The effect of ZnTe absorber thickness on different main working parameters such as: open-circuit voltage Voc, short-circuit current density Jsc, fill factor FF, photovoltaic conversion efficiency η was intensely studied in order to optimize ZnTe film thickness. This study reveals that increasing the thickness of ZnTe absorber layer results in higher efficiency until a maximum value and then decreases slightly. This maximum was found to be 10% at ZnTe optimum thickness close to 2 µm. Contribution to the topical issue "Materials for Energy Harvesting, Conversion and Storage (ICOME 2015) - Elected submissions", edited by Jean-Michel Nunzi, Rachid Bennacer and Mohammed El Ganaoui

Enhancement of hole-injection and power efficiency of organic light emitting devices using an ultra-thin ZnO buffer layer

International Nuclear Information System (INIS)

Huang, H.-H.; Chu, S.-Y.; Kao, P.-C.; Chen, Y.-C.; Yang, M.-R.; Tseng, Z.-L.

2009-01-01

The advantages of using an anode buffer layer of ZnO on the electro-optical properties of organic light emitting devices (OLEDs) are reported. ZnO powders were thermal-evaporated and then treated with ultra-violet (UV) ozone exposure to make the ZnO layers. The turn-on voltage of OLEDs decreased from 4 V (4.2 cd/m 2 ) to 3 V (3.4 cd/m 2 ) and the power efficiency increased from 2.7 lm/W to 4.7 lm/W when a 1-nm-thick ZnO layer was inserted between indium tin oxide (ITO) anodes and α-naphthylphenylbiphenyl diamine (NPB) hole-transporting layers. X-ray and ultra-violet photoelectron spectroscopy (XPS and UPS) results revealed the formation of the ZnO layer and showed that the work function increased by 0.59 eV when the ZnO/ITO layer was treated by UV-ozone for 20 min. The surface of the ZnO/ITO film became smoother than that of bare ITO film after the UV-ozone treatment. Thus, the hole-injection energy barrier was lowered by inserting an ZnO buffer layer, resulting in a decrease of the turn-on voltage and an increase of the power efficiency of OLEDs.

High quality ZnO layers with adjustable refractive indices for integrated optics applications

NARCIS (Netherlands)

Heideman, Rene; Lambeck, Paul; Gardeniers, Johannes G.E.

1995-01-01

Thin (approx. 1 μm) crystalline ZnO films with a good optical quality and a good (0002) texture are grown under two considerably different process parameter sets using a r.f. planar magnetron sputtering unit. The optical parameters of the two corresponding ZnO layers are distinctly different: high

Effects of growth duration on the structural and optical properties of ZnO nanorods grown on seed-layer ZnO/polyethylene terephthalate substrates

Energy Technology Data Exchange (ETDEWEB)

Jeong, Y.I.; Shin, C.M.; Heo, J.H. [Department of Nano Systems Engineering, Center for Nano Manufacturing Inje University, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing Inje University, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, Busan 614-714 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Busan 617-736 (Korea, Republic of); Yun, J. [Department of Nano Science and Engineering, Institute of Advanced Materials Kyungnam University, Changwon, Gyeongnam 631-701 (Korea, Republic of)

2011-10-01

Well-aligned single crystalline zinc oxide (ZnO) nanorods were successfully grown, by hydrothermal synthesis at a low temperature, on flexible polyethylene terephthalate (PET) substrates with a seed layer. Photoluminescence (PL), field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) measurements were used to analyze the optical and structural properties of ZnO nanorods grown for various durations from 0.5 h to 10 h. Regular and well-aligned ZnO nanorods with diameters ranging from 62 nm to 127 nm and lengths from 0.3 {mu}m to 1.65 {mu}m were formed after almost 5 h of growth. The growth rate of ZnO grown on PET substrates is lower than that grown on Si (1 0 0) substrates. Enlarged TEM images show that the tips of the ZnO nanorods grown for 6 h have a round shape, whereas the tips grown for 10 h are sharpened. The crystal properties of ZnO nanorods can be tuned by using the growth duration as a growth condition. The XRD and PL results indicate that the structural and optical properties of the ZnO nanorods are most improved after 5 h and 6 h of growth, respectively.

Enhanced Performance of Nanowire-Based All-TiO2 Solar Cells using Subnanometer-Thick Atomic Layer Deposited ZnO Embedded Layer

International Nuclear Information System (INIS)

Ghobadi, Amir; Yavuz, Halil I.; Ulusoy, T. Gamze; Icli, K. Cagatay; Ozenbas, Macit; Okyay, Ali K.

2015-01-01

In this paper, the effect of angstrom-thick atomic layer deposited (ALD) ZnO embedded layer on photovoltaic (PV) performance of Nanowire-Based All-TiO 2 solar cells has been systematically investigated. Our results indicate that by varying the thickness of ZnO layer the efficiency of the solar cell can be significantly changed. It is shown that the efficiency has its maximum for optimal thickness of 1 ALD cycle in which this ultrathin ZnO layer improves device performance through passivation of surface traps without hampering injection efficiency of photogenerated electrons. The mechanisms contributing to this unprecedented change in PV performance of the cell have been scrutinized and discussed

Enhanced magnetic properties of chemical solution deposited BiFeO3 thin film with ZnO buffer layer

International Nuclear Information System (INIS)

Rajalakshmi, R.; Kambhala, Nagaiah; Angappane, S.

2012-01-01

Highlights: ► Enhanced magnetization of BiFeO 3 is important for strong magnetoelectric coupling. ► BiFeO 3 film with ZnO buffer layer was successfully synthesized by chemical method. ► Magnetization of BiFeO 3 has increased by more than 10 times with ZnO buffer layer. ► A mechanism for enhancement in ferromagnetism of BiFeO 3 film is proposed. - Abstract: Magnetic properties of BiFeO 3 films deposited on Si substrates with and without ZnO buffer layer have been studied in this work. We adopted the chemical solution deposition method for the deposition of BiFeO 3 as well as ZnO films. The x-ray diffraction measurements on the deposited films confirm the formation of crystalline phase of BiFeO 3 and ZnO films, while our electron microscopy measurements help to understand the morphology of few micrometers thick films. It is found that the deposited ZnO film exhibit a hexagonal particulate surface morphology, whereas BiFeO 3 film fully covers the ZnO surface. Our magnetic measurements reveal that the magnetization of BiFeO 3 has increased by more than ten times in BiFeO 3 /ZnO/Si film compared to BiFeO 3 /Si film, indicating the major role played by ZnO buffer layer in enhancing the magnetic properties of BiFeO 3 , a technologically important multiferroic material.

Effect of Mass Proportion of Municipal Solid Waste Incinerator Bottom Ash Layer to Municipal Solid Waste Layer on the Cu and Zn Discharge from Landfill

Science.gov (United States)

Kong, Qingna; Qiu, Zhanhong; Shen, Dongsheng

2016-01-01

Municipal solid waste incinerator (MSWI) bottom ash is often used as the protection layer for the geomembrane and intermediate layer in the landfill. In this study, three sets of simulated landfills with different mass proportion of MSWI bottom ash layer to municipal solid waste (MSW) layer were operated. Cu and Zn concentrations in the leachates and MSW were monitored to investigate the effect of MSWI bottom ash layer on the Cu and Zn discharge from the landfill. The results showed that the Zn discharge was dependent on the mass proportion of MSWI bottom ash layer. The pH of landfill was not notably increased when the mass proportion of MSWI bottom ash layer to MSW layer was 1 : 9, resulting in the enhancement of the Zn discharge. However, Zn discharge was mitigated when the mass proportion was 2 : 8, as the pH of landfill was notably promoted. The discharge of Cu was not dependent on the mass proportion, due to the great affinity of Cu to organic matter. Moreover, Cu and Zn contents of the sub-MSW layer increased due to the MSWI bottom ash layer. Therefore, the MSWI bottom ash layer can increase the potential environmental threat of the landfill. PMID:28044139

Effect of Mass Proportion of Municipal Solid Waste Incinerator Bottom Ash Layer to Municipal Solid Waste Layer on the Cu and Zn Discharge from Landfill.

Science.gov (United States)

Kong, Qingna; Yao, Jun; Qiu, Zhanhong; Shen, Dongsheng

2016-01-01

Municipal solid waste incinerator (MSWI) bottom ash is often used as the protection layer for the geomembrane and intermediate layer in the landfill. In this study, three sets of simulated landfills with different mass proportion of MSWI bottom ash layer to municipal solid waste (MSW) layer were operated. Cu and Zn concentrations in the leachates and MSW were monitored to investigate the effect of MSWI bottom ash layer on the Cu and Zn discharge from the landfill. The results showed that the Zn discharge was dependent on the mass proportion of MSWI bottom ash layer. The pH of landfill was not notably increased when the mass proportion of MSWI bottom ash layer to MSW layer was 1 : 9, resulting in the enhancement of the Zn discharge. However, Zn discharge was mitigated when the mass proportion was 2 : 8, as the pH of landfill was notably promoted. The discharge of Cu was not dependent on the mass proportion, due to the great affinity of Cu to organic matter. Moreover, Cu and Zn contents of the sub-MSW layer increased due to the MSWI bottom ash layer. Therefore, the MSWI bottom ash layer can increase the potential environmental threat of the landfill.

Dimensional crossover of electron weak localization in ZnO/TiO{sub x} stacked layers grown by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Bhartiya, S. [Laser Materials Development & Devices Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Gupta, M. [UGC-DAE Consortium for Scientific Research, Indore 452 017 (India)

2016-01-25

We report on the dimensional crossover of electron weak localization in ZnO/TiO{sub x} stacked layers having well-defined and spatially-localized Ti dopant profiles along film thickness. These films were grown by in situ incorporation of sub-monolayer TiO{sub x} on the growing ZnO film surface and subsequent overgrowth of thin conducting ZnO spacer layer using atomic layer deposition. Film thickness was varied in the range of ∼6–65 nm by vertically stacking different numbers (n = 1–7) of ZnO/TiO{sub x} layers of nearly identical dopant-profiles. The evolution of zero-field sheet resistance (R{sub ◻}) versus temperature with decreasing film thickness showed a metal to insulator transition. On the metallic side of the metal-insulator transition, R{sub ◻}(T) and magnetoresistance data were found to be well corroborated with the theoretical framework of electron weak localization in the diffusive transport regime. The temperature dependence of both R{sub ◻} and inelastic scattering length provided strong evidence for a smooth crossover from 2D to 3D weak localization behaviour. Results of this study provide deeper insight into the electron transport in low-dimensional n-type ZnO/TiO{sub x} stacked layers which have potential applications in the field of transparent oxide electronics.

Synthesis and characterization of heterobinuclear (La-Zn, Pr-Zn, Nd-Zn, Sm-Zn, Eu-Zn, Gd-Zn, Tb-Zn, Dy-Zn) azine-bridged complexes

International Nuclear Information System (INIS)

Singh, Bachcha; Srivastav, A.K.; Singh, P.K.

1997-01-01

Zinc(II) complex of 2-acetylpyridine salicyl aldazine (Haps) of the type Zn(aps) 2 (H 2 O) 2 has been synthesised. The reaction of Zn(aps) 2 (H 2 O) 2 with lanthanide chlorides, LnCl 3 (where Ln=La, Pr, Nd, Sm, Eu, Gd, Tb and Dy) yields azine-bridged heterobinuclear complexes of the formulae LnCl 3 Zn(aps) 2 (H 2 O) 2 . These complexes have been characterized by elemental analyses, molecular weight, conductance (solid and solution) and magnetic susceptibility measurements, mass, IR and electronic spectral data. X-ray powder diffraction data indicate the tetragonal unit lattice for Zn(aps) 2 (H 2 O) 2 and PrCl 3 Zn(aps) 2 (H 2 O) 2 . (author)

Chemical-bath ZnO buffer layer for CuInS{sub 2} thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Ennaoui, A.; Weber, M.; Scheer, R.; Lewerenz, H.J. [Hahn-Meitner-Institut, Abt. Grenzflaechen, Bereich Physikalische Chemie, Glienicker Strasse 100, D-14109 Berlin (Germany)

1998-07-13

ZnO buffer layers were grown by a chemical-bath deposition (CBD) in order to improve the interface quality in p-CuInS{sub 2} based solar cells, to improve the light transmission in the blue wavelength region, but also as an alternative to eliminate the toxic cadmium. The process consists of immersion of different substrates (glass, CIS) in a dilute solution of tetraamminezinc II, [Zn(NH{sub 2}){sub 4}]{sup 2+}, complex at 60-95C. During the growth process, a homogeneous growth mechanism which proceeds by the sedimentation of a mixture of ZnO and Zn(OH){sub 2} clusters formed in solution, competes with the heterogeneous growth mechanism. The mechanism consists of specific adsorption of a complex Zn(II) followed by a chemical reaction. The last process of growth results in thin, hard, adherent and specularly reflecting films. The characterization of the deposited CBD-ZnO layers was performed by X-ray diffraction (XRD), optical transmittance, scanning electron microscopy, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The as-deposited films on glass show hexagonal zincite structure with two preferred orientations (1 0 0) and (1 0 1). High optical transmittance up to 80% in the near-infrared and part of the visible region was observed. The low growth rate of the films on CIS suggests an atomic layer-by-layer growth process.The device parameters and performance are compared to heterojunction with a standard CdS buffer layer

Strain-free GaN thick films grown on single crystalline ZnO buffer layer with in situ lift-off technique

International Nuclear Information System (INIS)

Lee, S. W.; Minegishi, T.; Lee, W. H.; Goto, H.; Lee, H. J.; Lee, S. H.; Lee, Hyo-Jong; Ha, J. S.; Goto, T.; Hanada, T.; Cho, M. W.; Yao, T.

2007-01-01

Strain-free freestanding GaN layers were prepared by in situ lift-off process using a ZnO buffer as a sacrificing layer. Thin Zn-polar ZnO layers were deposited on c-plane sapphire substrates, which was followed by the growth of Ga-polar GaN layers both by molecular beam epitaxy (MBE). The MBE-grown GaN layer acted as a protecting layer against decomposition of the ZnO layer and as a seeding layer for GaN growth. The ZnO layer was completely in situ etched off during growth of thick GaN layers at low temperature by hydride vapor phase epitaxy. Hence freestanding GaN layers were obtained for the consecutive growth of high-temperature GaN thick layers. The lattice constants of freestanding GaN agree with those of strain-free GaN bulk. Extensive microphotoluminescence study indicates that strain-free states extend throughout the high-temperature grown GaN layers

Inverted Organic Solar Cells with Low-Temperature Al-Doped-ZnO Electron Transport Layer Processed from Aqueous Solution

Directory of Open Access Journals (Sweden)

Qianni Zhang

2018-01-01

Full Text Available The aqueous-based Zn-ammine complex solutions represent one of the most promising routes to obtain the ZnO electron transport layer (ETL at a low temperature in inverted organic solar cells (OSCs. However, to dope the ZnO film processed from the Zn-ammine complex solutions is difficult since the introduction of metal ions into the Zn-ammine complex is a nontrivial process as ammonium hydroxide tends to precipitate metal salts due to acid-base neutralization reactions. In this paper, we investigate the inverted OSCs with Al-doped-ZnO ETL made by immersion of metallic Al into the Zn-ammine precursor solution. The effects of ZnO layer with different immersion time of Al on film properties and solar cell performance have been studied. The results show that, with the Al-doped-ZnO ETL, an improvement of the device performance could be obtained compared with the device with the un-doped ZnO ETL. The improved device performance is attributed to the enhancement of charge carrier mobility leading to a decreased charge carrier recombination and improved charge collection efficiency. The fabricated thin film transistors with the same ZnO or AZO films confirm the improved electrical characteristics of the Al doped ZnO film.

Graphene-Tapered ZnO Nanorods Array as a Flexible Antireflection Layer

Directory of Open Access Journals (Sweden)

Taeseup Song

2015-01-01

Full Text Available Flexible solar cells have drawn a great deal of attention due to their various advantages including deformable and wearable characteristics. In the solar cells, the antireflection layer plays an important role in the improvement in the conversion efficiency by increasing the light transmission and suppressing the Fresnel refraction. For the successful implantation of the antireflection layer into the flexible solar cells, the flexible mechanical property of the antireflection layer is also necessary. However, the study on flexible antireflection layer for the flexible solar cells or optoelectronics is still lacking. In this study, we report the graphene-tapered ZnO nanorods array as a flexible antireflection layer for the application in flexible solar cells. Flexible two-dimensional graphene sheet and the tapered morphology of ZnO nanorods enable conformal coverage on the flexible substrate with curved surface and significant improvements in antireflection properties, respectively.

Zn-Al LAYERED DOUBLE HYDROXIDE PILLARED BY DIFFERENT DICARBOXYLATE ANIONS

Directory of Open Access Journals (Sweden)

S. Gago

2004-12-01

Full Text Available Zn-Al layered double hydroxides (LDHs intercalated by terephthalate (TPH and biphenyl-4,4'-dicarboxylate (BPH anions have been synthesized by direct co-precipitation from aqueous solution. The Zn/Al ratio in the final materials was 1.8. The products were characterized by powder X-ray diffraction, thermogravimetric analysis, FTIR and FT Raman spectroscopy, and MAS NMR spectroscopy. The basal spacing for the TPH-LDH intercalate was 14.62 Å, indicating that the guest anions stack to form a monolayer with the aromatic rings perpendicular to the host layers. For the LDH intercalate containing BPH anions, a basal spacing of at least 19.2 Å would be expected if the anions adopted an arrangement similar to that for the TPH anions. The observed spacing was 18.24 Å, suggesting that the anions are tilted slightly with respect to the host layers.

Magnetic Properties of Ni-Zn Ferrite Prepared with the Layered Precursor Method

International Nuclear Information System (INIS)

Zhou Xin; Hou Zhi-Ling; Li Feng; Qi Xin

2010-01-01

We prepare NiZnFe 2 O 4 soft magnetic ferrites with different molar ratios with the layered precursor method and investigate their magnetic properties. In the layered precursor, metal ions are scattered on the layer plate in a certain way on account of the effect of lowest lattice energy and lattice orientation. After high temperature calcinations, spinel ferrites with uniform structural component and single magnetic domain can be obtained, and the magnetic property is improved greatly. NiZnFe 2 O 4 ferrites prepared have the best specific saturation magnetization of 79.15 emu·g −1 , higher than that of 68 emu·g −1 prepared by the chemical co-precipitation method and that of 59 emu·g −1 prepared by the emulsion-gel method. Meanwhile the coercivity of NiZnFe 2 O 4 ferrites prepared by layered precursor method is 14 kA·m −1 , lower than that of 50 emu·g −1 prepared by the co-precipitation method and that of 59 emu·g −1 prepared by the emulsion-gel method. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Corrosion behavior and protective ability of Zn and Zn-Co electrodeposits with embedded polymeric nanoparticles

International Nuclear Information System (INIS)

Boshkov, N.; Tsvetkova, N.; Petrov, P.; Koleva, D.; Petrov, K.; Avdeev, G.; Tsvetanov, Ch.; Raichevsky, G.; Raicheff, R.

2008-01-01

The anodic behavior, corrosion resistance and protective ability of Zn and alloyed Zn-Co (∼3 wt.%) nanocomposite coatings were investigated in a model corrosion medium of 5% NaCl solution. The metallic matrix of the layers incorporates core-shell nano-sized stabilized polymeric micelles (SPMs) obtained from poly(ethylene oxide)-b-poly(propylene oxide)-b-poly(ethylene oxide) block co-polymers. The protective properties of the composite coatings were evaluated using potentiodynamic polarization technique, polarization resistance measurements and powder X-ray diffraction. The sizes and distribution of the stabilized polymeric micelles in the starting electrolytes used as well as in the metal matrices of the layers were investigated using scanning and transmission electron microscopy. The results obtained are compared to those of electrodeposited Zn and Zn-Co (∼3 wt.%) alloy coatings at identical conditions and demonstrate the enhanced protective characteristics of the Zn nanocomposites during the investigating period. The influence of the SPMs on the corrosion resistance of the nanocomposite layers is commented and discussed

Growth and characterization of polar and nonpolar ZnO film grown on sapphire substrates by using atomic layer deposition

International Nuclear Information System (INIS)

Kim, Ki-Wook; Son, Hyo-Soo; Choi, Nak-Jung; Kim, Jihoon; Lee, Sung-Nam

2013-01-01

We investigated the electrical and the optical properties of polar and nonpolar ZnO films grown on sapphire substrates with different crystallographic planes. High resolution X-ray results revealed that polar c-plane (0001), nonpolar m-plane (10-10) and a-plane (11-20) ZnO thin films were grown on c-plane, m- and r-sapphire substrates by atomic layer deposition, respectively. Compared with the c-plane ZnO film, nonpolar m-plane and a-plane ZnO films showed smaller surface roughness and anisotropic surface structures. Regardless of ZnO crystal planes, room temperature photoluminescence spectra represented two emissions which consisted of the near bandedge (∼ 380 nm) and the deep level emission (∼ 500 nm). The a-plane ZnO films represented better optical and electrical properties than c-plane ZnO, while m-plane ZnO films exhibited poorer optical and electrical properties than c-plane ZnO. - Highlights: • Growth and characterization of a-, c- and m-plane ZnO film by atomic layer deposition. • The a-plane ZnO represented better optical and electrical properties than c-plane ZnO. • The m-plane ZnO exhibited poorer optical and electrical properties than c-plane ZnO

Effect of inserting of thin Rubrene layer on performance of Organic Light-Emitting Diodes based on Zn(BTz)2

Science.gov (United States)

Tomova, R. L.; Petrova, P. K.; Stoycheva-Topalova, R. T.

2010-11-01

Organic light-emitting diodes (OLEDs) with improved performances are fabricated using a thin (1 nm) yellow-emitting layer of 5,6,11,12-tetraphenylnaphthacene (Rubrene) inserted at different position in green emitting electroluminescent (EL) layer of bis-(2-(2-hydroxyphenyl) benzothiazole)zinc (Zn(BTz)2) in configuration: ITO/PVK:TPD/ Zn(BTz)2 (x nm)/ Rubrene (1 nm)/ Zn(BTz)2 (75-x nm)/Al, where PVK:TPD is a hole transporting layer of N, N'-bis(3-methylphenyl)-N, N'-diphenylbenzidine (TPD) incorporated in poly(N-vinylcarbazole) (PVK) matrix and Al is a cathode. EL spectra predominantly influenced by Rubrene emission when the doping layer is close to (PVK:TPD)/ Zn(BTz)2 (x→ 0-15 nm) and to Zn(BTz)2/Al (x→ 70-75 nm) interfaces and shift toward emission of Zn(BTz)2 increasing the distance of Rubrene from both interfaces (x→35 nm). The same dependence of the EL efficiency on the position of the doping Rubrene layer in the OLED structure was found.

Mass measurement and structure studies of neutron-rich isotopes of Zn, Ni, Fe

International Nuclear Information System (INIS)

Dessagne, P.

1982-01-01

With the Orsay MP Tandem, the reaction ( 14 C, 16 O) on 58 - 60 - 62 - 64 Ni, 64 - 66 - 68 - 70 Zn, 74 - 76 Ge and 82 Se targets, and the reaction ( 14 C, 15 O) on 60 - 62 - 64 Ni, 68 - 70 Zn, 76 Ge targets, have been investigated at 72 MeV bombarding energy. The mass excess of neutron rich nuclei: 63 Fe (-55.19+-.06MeV), 69 Ni(-60.14+-.06 MeV), 75 Zn(.62.7+-08 MeV) have been measured for the first time, and those of 62 Fe, 68 Ni, 74 Zn, 80 Ge have been remeasured. A new equipment has been designed in order to perform measurements at zero degree. From the angular distribution around 0 0 for the 70 Zn( 14 C, 16 O) reaction, the first state of 68 Ni observed for the first time (1.77 MeV +- .04 MeV) has been shown to be a 0 + . This result establishes a new case of 2 1+ - 0 2+ inversion. The systematics of the ( 14 C, 16 O) measurements on the even Ni and Zn isotopes have shown a different behaviour with two series. For the Ni → Fe (g.s.) transitions, the ratio σsub(exp)/σsub(DWBA) increases by a factor of four when the neutron number varies from 30 to 36. Whereas for the Zn → Ni (gs) transitions this ratio remains constant for the first three isotopes and decrease by a factor of two when N=40. For the Ni → Fe transitions, axial and spherical symmetries have been used. In agreement with the shell model no change are found with the spherical symmetry. For the axial symmetry a variation is observed but strongly dapendant of the sub-shell. Hence no clear conclusion can be deduced for the cross section estimate. For the Zn → Ni transitions, the spherical symmetry has been used. One configuration prevails, leading to a qualitative agreement with the experimental results [fr

Interfacial passivation of CdS layer to CdSe quantum dots-sensitized electrodeposited ZnO nanowire thin films

International Nuclear Information System (INIS)

Zhang, Jingbo; Sun, Chuanzhen; Bai, Shouli; Luo, Ruixian; Chen, Aifan; Sun, Lina; Lin, Yuan

2013-01-01

ZnO porous thin films with nanowire structure were deposited by the one-step electrochemical deposition method. And a CdS layer was coated on the as-deposited ZnO nanowire thin films by successive ionic layer adsorption and reaction (SILAR) method to passivate surface states. Then the films were further sensitized by CdSe quantum dots (QDs) to serve as a photoanode for fabricating quantum dots-sensitized solar cells (QDSSCs). The effect of the CdS interfacial passivation layer on the performance of the QDSSCs was systematically investigated by varying the SILAR cycle number and heating the passivation layer. The amorphous CdS layer with an optimized thickness can effectively suppress the recombination of the injected electrons with holes on QDs and the redox electrolyte. The newly formed CdS layer on the surface of the ZnO nanowire thin film obviously prolongs the electron lifetime in the passivated ZnO nanoporous thin film because of the lower surface trap density in the ZnO nanowires after CdS deposition, which is favorable to the higher short-circuit photocurrent density (J sc ). For the CdSe QDs-sensitized ZnO nanoporous thin film with the interfacial passivation layer, the J sc and conversion efficiency can reach a maximum of 8.36 mA cm −2 and 2.36%, respectively. The conversion efficiency was improved by 83.47% compared with that of the cell based on the CdSe QDs-sensitized ZnO nanoporous thin film without CdS interfacial passivation (0.39%)

Bound magnetic polaron in Zn-rich cobalt-doped ZnSe nanowires

Science.gov (United States)

Hou, Lipeng; Pan, Longfei; Liang, Bianbian; Liu, Yuting; Zhang, Li; Bukhtiar, Arfan; Shi, Lijie; Liu, Ruibin; Zou, Bingsuo

2018-02-01

The micro-luminescence spectra of the diluted magnetic semiconductor (DMS) can reflect the spin-exciton interaction and related relaxation process. Here the micro-photoluminescence (micro-PL) spectra and PL lifetime measurements have been done on an individual ferromagnetic (FM)-coupled cobalt (Co) doped zinc selenide (ZnSe) nanowire. There occurs a double-peak profile in its near bandedge emission spectrum: the first peak is from free exciton (FX) and the second comes from magnetic polaron (MP). In their temperature dependent PL spectra, the MP emission peak demonstrates obviously temperature-independent behavior, in contrast to the behaviors of FX and reported exciton MP in nanobelt. It is found that in this Co(II) doped ZnSe nanowires, this MP’s temperature-independent emission is related to the coupling between exciton and a FM nanocluster (↑↑↓). The nanocluster is likely due to the interaction of Se vacancies of the wide bandgap semiconductors with the antiferromagnetic (AFM) arrangement transition metal (TM) ions in these Se-deficient Co doped ZnSe nanowires. These results reflect that the AFM coupling TM ions pair can give rise to FM behavior with the involvement of positive charge defect, also indicating that the micro-luminescence detection can be used to study the magnetic coupling in DMS.

Effect of the thickness of Zn(BTZ){sub 2} emitting layer on the electroluminescent spectra of white organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Zhu, F.J. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China); Hua, Y.L. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China)]. E-mail: yulinhua@tjut.edu.cn; Yin, S.G. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China); Deng, J.C. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China); Wu, K.W. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China); Niu, X. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China); Wu, X.M. [Institute of Modern Optics, Nankai University, Tianjin 300191 (China); Petty, M.C. [Centre for Molecular and Nanoscale Electronics, University of Durham, Durham DH1 3LE (United Kingdom)

2007-01-15

White organic light-emitting diodes (OLEDs) are fabricated with a simple bilayer structure: ITO/TPD/ Zn(BTZ){sub 2}/Al. White emission is composed of two parts: one is 470 nm, which originates from exciton emission in Zn(BTZ){sub 2} emitting layer; the other is 580 nm, which originates from exciplexes formation at the interface of TPD and Zn(BTZ){sub 2}. Specially, the thickness of Zn(BTZ){sub 2} layer effects the relative intensity of two emissions. When the Zn(BTZ){sub 2} layer becomes thin (or thick), the 470 nm (or 580 nm) emission intensity turns into weak (or strong). Finally, We successfully fabricated pure white OLED when the thickness of Zn(BTZ){sub 2} layer was 65 nm.

Atomic Layer Deposition of Electron Selective SnOx and ZnO Films on Mixed Halide Perovskite: Compatibility and Performance.

Science.gov (United States)

Hultqvist, Adam; Aitola, Kerttu; Sveinbjörnsson, Kári; Saki, Zahra; Larsson, Fredrik; Törndahl, Tobias; Johansson, Erik; Boschloo, Gerrit; Edoff, Marika

2017-09-06

The compatibility of atomic layer deposition directly onto the mixed halide perovskite formamidinium lead iodide:methylammonium lead bromide (CH(NH 2 ) 2 , CH 3 NH 3 )Pb(I,Br) 3 (FAPbI 3 :MAPbBr 3 ) perovskite films is investigated by exposing the perovskite films to the full or partial atomic layer deposition processes for the electron selective layer candidates ZnO and SnO x . Exposing the samples to the heat, the vacuum, and even the counter reactant of H 2 O of the atomic layer deposition processes does not appear to alter the perovskite films in terms of crystallinity, but the choice of metal precursor is found to be critical. The Zn precursor Zn(C 2 H 5 ) 2 either by itself or in combination with H 2 O during the ZnO atomic layer deposition (ALD) process is found to enhance the decomposition of the bulk of the perovskite film into PbI 2 without even forming ZnO. In contrast, the Sn precursor Sn(N(CH 3 ) 2 ) 4 does not seem to degrade the bulk of the perovskite film, and conformal SnO x films can successfully be grown on top of it using atomic layer deposition. Using this SnO x film as the electron selective layer in inverted perovskite solar cells results in a lower power conversion efficiency of 3.4% than the 8.4% for the reference devices using phenyl-C 70 -butyric acid methyl ester. However, the devices with SnO x show strong hysteresis and can be pushed to an efficiency of 7.8% after biasing treatments. Still, these cells lacks both open circuit voltage and fill factor compared to the references, especially when thicker SnO x films are used. Upon further investigation, a possible cause of these losses could be that the perovskite/SnO x interface is not ideal and more specifically found to be rich in Sn, O, and halides, which is probably a result of the nucleation during the SnO x growth and which might introduce barriers or alter the band alignment for the transport of charge carriers.

Formation of three-dimensional ZnSe-based semiconductor nanostructures

International Nuclear Information System (INIS)

Alyshev, S. V.; Zabezhaylov, A. O.; Mironov, R. A.; Kozlovsky, V. I.; Dianov, E. M.

2010-01-01

Nanostructures consisting of a 10-nm-thick sacrificial layer of ZnMgSSe and a 20-nm-thick stressed bilayer of ZnSSe/ZnSe were grown by molecular-beam epitaxy on GaAs substrates. Upon removal of the sacrificial layer by selective etching, multiwall ZnSSe/ZnSe microtubes were formed.

Changing the thickness of two layers: i-ZnO nanorods, p-Cu2O and its influence on the carriers transport mechanism of the p-Cu2O/i-ZnO nanorods/n-IGZO heterojunction.

Science.gov (United States)

Ke, Nguyen Huu; Trinh, Le Thi Tuyet; Phung, Pham Kim; Loan, Phan Thi Kieu; Tuan, Dao Anh; Truong, Nguyen Huu; Tran, Cao Vinh; Hung, Le Vu Tuan

2016-01-01

In this study, two layers: i-ZnO nanorods and p-Cu2O were fabricated by electrochemical deposition. The fabricating process was the initial formation of ZnO nanorods layer on the n-IGZO thin film which was prepared by sputtering method, then a p-Cu2O layer was deposited on top of rods to form the p-Cu2O/i-ZnO nanorods/n-ZnO heterojunction. The XRD, SEM, UV-VIS, I-V characteristics methods were used to define structure, optical and electrical properties of these heterojunction layers. The fabricating conditions and thickness of the Cu2O layers significantly affected to the formation, microstructure, electrical and optical properties of the junction. The length of i-ZnO nanorods layer in the structure of the heterojunction has strongly affected to the carriers transport mechanism and performance of this heterojunction.

CuGaS2 and CuGaS2–ZnS Porous Layers from Solution-Processed Nanocrystals

Science.gov (United States)

Guardia, Pablo; Estradé, Sònia; Peiró, Francesca; Cabot, Andreu

2018-01-01

The manufacturing of semiconducting films using solution-based approaches is considered a low cost alternative to vacuum-based thin film deposition strategies. An additional advantage of solution processing methods is the possibility to control the layer nano/microstructure. Here, we detail the production of mesoporous CuGaS2 (CGS) and ZnS layers from spin-coating and subsequent cross-linking through chalcogen-chalcogen bonds of properly functionalized nanocrystals (NCs). We further produce NC-based porous CGS/ZnS bilayers and NC-based CGS–ZnS composite layers using the same strategy. Photoelectrochemical measurements are used to demonstrate the efficacy of porous layers, and particularly the CGS/ZnS bilayers, for improved current densities and photoresponses relative to denser films deposited from as-produced NCs. PMID:29621198

Zn speciation in a soil contaminated by the deposition of a dredged sediment by synchrotron X-ray techniques

International Nuclear Information System (INIS)

Isaure, Marie-Pierre; Manceau, Alain; Laboudigue, Agnes; Tamura, Nobumichi; Marcus, Matthew A.

2003-09-01

The nature and proportion of Zn species present in an agricultural soil overlaid by a dredged contaminated sediment have been untangled by the novel combination of three non-invasive synchrotron-based x-ray techniques: x-ray microfluorescence (μSXRF), microdiffraction (μXRD), and absorption spectroscopy (EXAFS). One primary (franklinite) and two secondary (phyllomanganate and phyllosilicate) Zn-containing minerals were identified in the initial soil, and another primary (ZnS) and a new secondary (Fe-(oxyhydr)oxide) Zn species in the covered soil. The quantitative analysis of EXAFS spectra recorded on bulk samples indicated that ZnS and Zn-Fe (oxyhydr)oxides amounted to 71+-10 percent and 27+-10 percent, respectively, and the other Zn species to less than 10 percent. The two new Zn species found in the covered soil result from the gravitational migration of ZnS particles initially present in the sediment, and from their further oxidative dissolution and fixation of leached Zn on F e (oxyhydr) oxides

Significant performance enhancement of inverted organic light-emitting diodes by using ZnIx as a hole-blocking layer

Science.gov (United States)

Cheng, Chuan-Hui; Zhang, Bi-Long; Sun, Chao; Li, Ruo-Xuan; Wang, Yuan; Tian, Wen-Ming; Zhao, Chun-Yi; Jin, Sheng-Ye; Liu, Wei-Feng; Luo, Ying-Min; Du, Guo-Tong; Cong, Shu-Lin

2017-06-01

A highly efficient inverted organic light emitting diode using 1.0 nm-thick ZnIx as a hole-blocking layer is developed. We fabricate devices with the configuration ITO/ZnIx (1.0 nm)/Alq3 (50 nm)/NPB (50 nm)/MoO3 (6.0 nm)/Al (100 nm). The deposition of a ZnIx layer increases the maximum luminance by two orders of magnitude from 13.4 to 3566.1 cd/m2. In addition, the maximum current efficiency and power efficiency are increased by three orders of magnitude, and the turn-on voltage to reach 1 cd/m2 decreases from 13 to 8 V. The results suggest that the electron injection efficiency is not improved by introducing a ZnIx layer. Instead, the improved device performance originates from the strong hole-blocking ability of ZnIx. This work indicates that layered materials may lead to novel applications in optoelectronic devices.

XPS, TEM and NRA investigations of Zn(Se,OH)/Zn(OH){sub 2} films on Cu(In,Ga)(S,Se){sub 2} substrates for highly efficient solar cells

Energy Technology Data Exchange (ETDEWEB)

Eisele, W.; Ennaoui, A.; Schubert-Bischoff, P.; Giersig, M.; Pettenkofer, C.; Krauser, J.; Lux-Steiner, M. [Hahn-Meitner Inst., Berlin (Germany); Zweigart, S.; Karg, F. [Siemens and Shell Solar, Munich (Germany)

2003-01-01

Structural and compositional properties of Zn(Se,OH)/Zn(OH){sub 2} buffer layers deposited by chemical bath deposition(CBD) on Cu(In,Ga)(S,Se){sub 2} (CIGSS) absorbers are investigated. Due to the aqueous nature of the CBD process, oxygen and hydrogen were incorporated into the 'ZnSe' buffer layer mainly in the form of Zn(OH){sub 2} as is shown by X-ray photoelectron spectroscopy and nuclear reaction analysis (NRA) measurements leading to the nomenclature 'Zn(Se,OH)'. Prior to the deposition of Zn(Se,OH), a zinc treatment of the absorber was performed. During that treatment a layer mainly consisting of Zn(OH){sub 2} grew to a thickness of several nanometer. The whole buffer layer therefore consists of a Zn(Se,OH)/Zn(OH){sub 2} structure on CIGSS. Part of the Zn(OH){sub 2} in both layers (i.e. the Zn(Se,OH) and the Zn(OH){sub 2} layer) might be converted into ZnO during measurements or storage. Scanning electron microscopy pictures showed that a complete coverage of the absorber with the buffer layer was achieved. Transmission electron microscopy revealed the different regions of the buffer layer: An amorphous area (possibly Zn(OH){sub 2}) and a partly nanocrystalline area, where lattice planes of ZnSe could be identified. Solar cell efficiencies of ZnO/Zn(Se,OH)/Zn(OH){sub 2}/CIGSS devices exceed 14% (total area).(author)

Highly Efficient Defect Emission from ZnO:Zn and ZnO:S Powders

Science.gov (United States)

Everitt, Henry

2013-03-01

Bulk Zinc Oxide (ZnO) is a wide band gap semiconductor with an ultraviolet direct band gap energy of 3.4 eV and a broad, defect-related visible wavelength emission band centered near 2 eV. We have shown that the external quantum efficiency can exceed 50% for this nearly white emission band that closely matches the human dark-adapted visual response. To explore the potential of ZnO as a rare earth-free white light phosphor, we investigated the mechanism of efficient defect emission in three types of ZnO powders: unannealed, annealed, and sulfur-doped. Annealing and sulfur-doping of ZnO greatly increase the strength of defect emission while suppressing the UV band edge emission. Continuous wave and ultrafast one- and two-photon excitation spectroscopy are used to examine the defect emission mechanism. Low temperature photoluminescence (PL) and PL excitation (PLE) spectra were measured for all three compounds, and it was found that bound excitons mediate the defect emission. Temperature-dependent PLE spectra for the defect and band edge emission were measured to estimate trapping and activation energies of the bound excitons and clarify the role they play in the defect emission. Time-resolved techniques were used to ascertain the role of exciton diffusion, the effects of reabsorption, and the spatial distributions of radiative and non-radiative traps. In unannealed ZnO we find that defect emission is suppressed and UV band edge emission is inefficient (reduced, and a high density of defects responsible for the broad visible emission are created near the surface. Interestingly, nearly identical PLE spectra are found for both the band edge and the defect emission, one of many indications that the defect emission is deeply connected to bound excitons. Quantum efficiency, also measured as a function of excitation wavelength, closely mirrors the PLE spectra for both emission bands. Sulfur-doped ZnO exhibits additional PLE and X-ray features indicative of a ZnS-rich surface

Low-temperature heteroepitaxial growth of InAlAs layers on ZnSnAs{sub 2}/InP(001)

Energy Technology Data Exchange (ETDEWEB)

Oomae, Hiroto; Suzuki, Akiko; Toyota, Hideyuki; Uchitomi, Naotaka [Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka 940-2188, Niigata (Japan); Nakamura, Shin' ichi [Center for Instrumental Analysis, College of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara 252-0206, Kanagawa (Japan)

2015-06-15

We studied the epitaxial growth of InAlAs on ZnSnAs{sub 2} thin films to establish magnetic heterostructures involving ferromagnetic Mn-doped ZnSnAs{sub 2} (ZnSnAs{sub 2}:Mn) thin films. These heterostructures were successfully grown at temperatures around 300 C to maintain room-temperature ferromagnetism in ZnSnAs{sub 2}:Mn. Reflection high-energy electron diffraction, X-ray diffraction measurements and cross-sectional transmission electron microscopy revealed that the InAlAs layers were pseudomorphically lattice-matched with ZnSnAs{sub 2,} even at the low temperature of 300 C. We attempted to prepare magnetic quantum well structures from the InAlAs/ZnSnAs{sub 2}:Mn magnetic multilayer structure. We found that InAlAs layers heteroepitaxially grown on ZnSnAs{sub 2} and ferromagnetic ZnSnAs{sub 2}:Mn films are suitable for preparing InP-based magnetic semiconductor quantum structures. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Fabrication of nanostructured ZnO film as a hole-conducting layer of organic photovoltaic cell

Science.gov (United States)

Kim, Hyomin; Kwon, Yiseul; Choe, Youngson

2013-05-01

We have investigated the effect of fibrous nanostructured ZnO film as a hole-conducting layer on the performance of polymer photovoltaic cells. By increasing the concentration of zinc acetate dihydrate, the changes of performance characteristics were evaluated. Fibrous nanostructured ZnO film was prepared by sol-gel process and annealed on a hot plate. As the concentration of zinc acetate dihydrate increased, ZnO fibrous nanostructure grew from 300 to 600 nm. The obtained ZnO nanostructured fibrous films have taken the shape of a maze-like structure and were characterized by UV-visible absorption, scanning electron microscopy, and X-ray diffraction techniques. The intensity of absorption bands in the ultraviolet region was increased with increasing precursor concentration. The X-ray diffraction studies show that the ZnO fibrous nanostructures became strongly (002)-oriented with increasing concentration of precursor. The bulk heterojunction photovoltaic cells were fabricated using poly(3-hexylthiophene-2,5-diyl) and indene-C60 bisadduct as active layer, and their electrical properties were investigated. The external quantum efficiency of the fabricated device increased with increasing precursor concentration.

Strain effects in the common-cation II-VI heterostructures: case of ZnS/ZnSe superlattices

CERN Document Server

Tit, N

2003-01-01

The electronic band-structures of the strained-layer ZnS/ZnSe (001) superlattices (SLs) have been investigated using the sp sup 3 s* tight-binding method, which includes the strain and spin-orbit effects. The SL band-structures are studied versus the biaxial strain, layer thickness, and band offsets. The results suggest that the common-cation II-VI heterojunction exhibit a vanishingly small conduction-band offset (CBO). It is shown that the SL valence-band top state is always a heavy-hole localized within ZnSe slabs; whereas the conduction-band edge state (electron) is sensitive to the biaxial strain (or VBO). To assess the strain effects, we considered three differently strained SLs corresponding to the three substrates: (i) ZnSe; (ii) ZnS sub 0 sub . sub 5 Se sub 0 sub . sub 5; and (iii) ZnS. The results show that all the studied SLs are of type-I except those strained to ZnS (case iii), that may exhibit type-I to type-II transition. One striking result obtained here is the existence of a critical VBO (V su...

The Optical and Electrical Properties of ZnO/Ag/ZnO Films on Flexible Substrate

Science.gov (United States)

Yu, Xiaojing; Zhang, Dongyan; Wang, Pangpang; Murakami, Ri-Ichi; Ding, Bingjun; Song, Xiaoping

The deposition of ZnO/Ag/ZnO film on polyethylene terephthalate (PET) substrate was fabricated by DC magnetron sputtering method. The thicknesses of ZnO layers were 30 nm and Ag films' thicknesses were changed from 1 nm to 6 nm by controlled the sputtering time. This kind of film can be used as transparent conductive oxide (TCO) materials. The electrical and optical properties of composite layers were determined by Ag films. The optimum sputtering time of Ag thin films was found to be 20 s for the high optical transmittance with good electrical conductivity. The ZnO/Ag(20 s)/ZnO layer, which has high optical transmittance of 73% at 550 nm, shows sheet resistance as low as 6.7 ohm/sq. These multilayer transparent films had low electrical resistance as the widely used transparent conductive oxide electrodes. SEM, XRD, the UV-Vis-NIR and Hall Effect measurement system were used to characterize properties of fabricated films. The reasons for the change of transmittance and resistance will also be interpreted.

Electrochemistry of Zn(II)/Zn on Mg alloy from the N-butyl-N-methylpyrrolidinium dicyanamide ionic liquid

Energy Technology Data Exchange (ETDEWEB)

Deng, Ming-Jay, E-mail: martinez730523@yahoo.com.tw [National Synchrotron Radiation Research Center, Hsinchu, Taiwan (China); Lin, Pei-Chiung [Department of Chemistry, National Cheng Kung University, Tainan, Taiwan (China); Chang, Jeng-Kuei, E-mail: jkchang@ncu.edu.tw [Institute of Materials Science and Engineering, National Central University, Taoyuan, Taiwan (China); Chen, Jin-Ming; Lu, Kueih-Tzu [National Synchrotron Radiation Research Center, Hsinchu, Taiwan (China)

2011-07-01

Highlights: > Electrodeposition of Zn was successfully demonstrnated in the water- and air-stable BMP-DCA ionic liquid. While ZnCl{sub 2} is insoluble in the BMP-TFSI ionic liquid, it dissolves easily in the BMP-DCA. > Amperometric titration experiments indicated that Zn(II) probably complexed as [Zn(DCA){sub 3}]- with DCA- anion. > Chronoamperometric experiments showed that the electrodeposition of Zn on GC and Mg alloy substrates involved 3D-instantaneous nucleation/growth process. > A lower deposition rate would bring out a more uniform and compact Zn coating layer (which is also thicker) and, consequently, this coating revealed a protection capability for the Mg substrate against corrosion. - Abstract: Electrochemical reaction of Zn(II)/Zn on glassy carbon electrode(GC) and Mg alloy substrates was investigated in the room-temperature ionic liquid, N-butyl-N-methyl-pyrrolidinium dicyanamide (BMP-DCA) containing ZnCl{sub 2} at 323 K. Amperometric titration experiments suggest that Zn(II) reacted with DCA anions forming [Zn(DCA){sub 3}]{sup -} complex anion, which also could be reduced to Zn metal via a single-step electron transfer process. By chronoamperometric measurements, the electrodeposition of Zn on GC and Mg alloy substrates involved three-dimensional instantaneous nucleation under diffusion control at 323 K. The Zn deposits are also systematically characterized by the techniques of powder X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The Zn layer deposited at a lower current density on Mg alloy substrates was more compact and uniform when compared to that deposited at a higher current density; consequently, this coating revealed a protection capability for the Mg substrate against corrosion.

In situ analysis of the Zn(S,O) buffer layer preparation for chalcopyrite solar cells by Zn L-edge X-ray absorption spectroscopy.

Science.gov (United States)

Lauermann, Iver; Kropp, Timo; Vottier, Damien; Ennaoui, Ahmed; Eberhardt, Wolfgang; Aziz, Emad F

2009-02-23

Bridging the gap between high-vacuum soft X-ray absorption spectroscopy and real systems under ambient conditions probes chemical reactions in situ during deposition and annealing processes. The origin of highly efficient buffer layers in Zn(S,O) is the complex formation between Zn(2+) and the S=C group of thiourea (see schematic), which allows ligand-to-metal and metal-to-ligand charge transfer (LMCT and MLCT).

ZnO-Nanorod Dye-Sensitized Solar Cells: New Structure without a Transparent Conducting Oxide Layer

Directory of Open Access Journals (Sweden)

Ming-Hong Lai

2010-01-01

Full Text Available Conventional nanorod-based dye-sensitized solar cells (DSSCs are fabricated by growing nanorods on top of a transparent conducting oxide (TCO, typically fluorine-doped tin oxide—FTO. The heterogeneous interface between the nanorod and TCO forms a source for carrier scattering. This work reports on a new DSSC architecture without a TCO layer. The TCO-less structure consists of ZnO nanorods grown on top of a ZnO film. The ZnO film replaced FTO as the TCO layer and the ZnO nanorods served as the photoanode. The ZnO nanorod/film structure was grown by two methods: (1 one-step chemical vapor deposition (CVD (2 two-step chemical bath deposition (CBD. The thicknesses of the nanorods/film grown by CVD is more uniform than that by CBD. We demonstrate that the TCO-less DSSC structure can operate properly as solar cells. The new DSSCs yield the best short-current density of 3.96 mA/cm2 and a power conversion efficiency of 0.73% under 85 mW/cm2 of simulated solar illumination. The open-circuit voltage of 0.80 V is markedly higher than that from conventional ZnO DSSCs.

CuGaS2 and CuGaS2–ZnS Porous Layers from Solution-Processed Nanocrystals

Directory of Open Access Journals (Sweden)

Taisiia Berestok

2018-04-01

Full Text Available The manufacturing of semiconducting films using solution-based approaches is considered a low cost alternative to vacuum-based thin film deposition strategies. An additional advantage of solution processing methods is the possibility to control the layer nano/microstructure. Here, we detail the production of mesoporous CuGaS2 (CGS and ZnS layers from spin-coating and subsequent cross-linking through chalcogen-chalcogen bonds of properly functionalized nanocrystals (NCs. We further produce NC-based porous CGS/ZnS bilayers and NC-based CGS–ZnS composite layers using the same strategy. Photoelectrochemical measurements are used to demonstrate the efficacy of porous layers, and particularly the CGS/ZnS bilayers, for improved current densities and photoresponses relative to denser films deposited from as-produced NCs.

Intermixing at the heterointerface between ZnS Zn S,O bilayer buffer and CuInS2 thin film solar cell absorber

OpenAIRE

Bär, M.; Ennaoui, A.; Klaer, J.; Kropp, T.; S ez Araoz, R.; Lehmann, S.; Grimm, A.; Lauermann, I.; Loreck, Ch.; Sokoll, St.; Schock, H. W.; Fischer, Ch. H.; Lux Steiner, M.C.; Jung, Ch

2006-01-01

The application of Zn compounds as buffer layers was recently extended to wide gap CuInS2 CIS based thin film solar cells. Using a new chemical deposition route for the buffer preparation aiming at the deposition of a single layer, nominal ZnS buffer without the need for any toxic reactants such as, e.g. hydrazine has helped to achieve a similar efficiency as respective CdS buffered reference devices. After identifying the deposited Zn compound, as ZnS Zn S,O bi layer buffer in former in...

Effect of inserting of thin Rubrene layer on performance of Organic Light-Emitting Diodes based on Zn(BTz){sub 2}

Energy Technology Data Exchange (ETDEWEB)

Tomova, R L; Petrova, P K; Stoycheva-Topalova, R T, E-mail: reni@clf.bas.b [Institute of optical materials and technologies ' Acad. J. Malinowski' , Bulgarian Academy of Sciences, ' Acad. G. Bonchev' str. bl. 109, 1113 Sofia (Bulgaria)

2010-11-01

Organic light-emitting diodes (OLEDs) with improved performances are fabricated using a thin (1 nm) yellow-emitting layer of 5,6,11,12-tetraphenylnaphthacene (Rubrene) inserted at different position in green emitting electroluminescent (EL) layer of bis-(2-(2-hydroxyphenyl) benzothiazole)zinc (Zn(BTz){sub 2}) in configuration: ITO/PVK:TPD/ Zn(BTz){sub 2} (x nm)/ Rubrene (1 nm)/ Zn(BTz){sub 2} (75-x nm)/Al, where PVK:TPD is a hole transporting layer of N, N'-bis(3-methylphenyl)-N, N'-diphenylbenzidine (TPD) incorporated in poly(N-vinylcarbazole) (PVK) matrix and Al is a cathode. EL spectra predominantly influenced by Rubrene emission when the doping layer is close to (PVK:TPD)/ Zn(BTz){sub 2} (x{yields} 0-15 nm) and to Zn(BTz){sub 2}/Al (x{yields} 70-75 nm) interfaces and shift toward emission of Zn(BTz){sub 2} increasing the distance of Rubrene from both interfaces (x{yields}35 nm). The same dependence of the EL efficiency on the position of the doping Rubrene layer in the OLED structure was found.

In Situ XRD Studies of ZnO/GaN Mixtures at High Pressure and High Temperature: Synthesis of Zn-Rich (Ga1-xZnx)(N1-xOx) Photocatalysts

Energy Technology Data Exchange (ETDEWEB)

Rodriguez, J.A.; Chen, H.; Wang, L.; Bai, J.; Hanson, J.C.; Warren, J.B.; Muckerman, J.T.; Fujita, E.

2010-02-04

The high-pressure, high-temperature conditions for the synthesis of Zn-rich (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions from mixtures of ZnO/GaN were explored using synchrotron-based in situ time-resolved X-ray diffraction (XRD). Following a new synthetic path, (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions with a Zn content up to 75% were prepared for the first time. The structures of the (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions were characterized by XRD and X-ray absorption fine structure (XAFS) analyses and were in excellent agreement with the predictions of density functional calculations. These materials adopt a wurtzite crystal structure with metal-N or metal-O bond distances in the range of 1.95-1.98 {angstrom}. Although the (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions seem to be stable over the full range of compositions, no ideal solid solution formation was observed. In all cases, the lattice parameters were larger than those of ideal solid solutions. The variation of the lattice parameter c showed an upward double bowing curve, as was predicted by theoretical calculations. Also, no ideal behavior was observed in the electronic properties of the (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions. X-ray absorption spectra at the Zn and Ga K-edges of the (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) systems showed significant electronic perturbations with respect to ZnO and GaN. The synthesized (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solution with a Zn content of 50% displayed the ability to absorb visible light well above 500 nm. This material has a great potential for splitting water under visible light irradiation. The availability of (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions with a high Zn content opens the door to fully explore the application of these materials in photocatalysis.

In Situ XRD Studies of ZnO/GaN Mixtures at High Pressure and High Temperature: Synthesis of Zn-Rich (Ga1-xZnx)(N1-xOx) Photocatalysts

Energy Technology Data Exchange (ETDEWEB)

Chen, H.; Wang, L; Bai, J; Hanson, J; Warren, J; Muckerman, J; Fujita, E; Rodriguez, J

2010-01-01

The high-pressure, high-temperature conditions for the synthesis of Zn-rich (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions from mixtures of ZnO/GaN were explored using synchrotron-based in situ time-resolved X-ray diffraction (XRD). Following a new synthetic path, (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions with a Zn content up to {approx}75% were prepared for the first time. The structures of the (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions were characterized by XRD and X-ray absorption fine structure (XAFS) analyses and were in excellent agreement with the predictions of density functional calculations. These materials adopt a wurtzite crystal structure with metal-N or metal-O bond distances in the range of 1.95-1.98 {angstrom}. Although the (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions seem to be stable over the full range of compositions, no ideal solid solution formation was observed. In all cases, the lattice parameters were larger than those of ideal solid solutions. The variation of the lattice parameter c showed an upward double bowing curve, as was predicted by theoretical calculations. Also, no ideal behavior was observed in the electronic properties of the (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions. X-ray absorption spectra at the Zn and Ga K-edges of the (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) systems showed significant electronic perturbations with respect to ZnO and GaN. The synthesized (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solution with a Zn content of 50% displayed the ability to absorb visible light well above 500 nm. This material has a great potential for splitting water under visible light irradiation. The availability of (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solutions with a high Zn content opens the door to fully explore the application of these materials in photocatalysis.

Modulating the size of ZnO nanorods on SiO2 substrates by incorporating reduced graphene oxide into the seed layer solution

Directory of Open Access Journals (Sweden)

Tzu-Yi Yu

2017-06-01

Full Text Available In this research, reduced graphene oxide was incorporated into the ZnO seed layer to modulate the rod diameter of ZnO nanorods (NRs during solgel/hydrothermal growth. To characterize the reduced graphene oxide incorporated ZnO NRs, multiple material analysis techniques including field-emission scanning electron microscopy, surface contact angle measurements, X-ray diffraction, and photoluminescence were used to explore distinct properties of these size modulatable NRs. Results indicate ZnO NRs with smaller diameters could be observed with more reduced graphene oxide added into the ZnO seed layer. Furthermore, better crystallinity, higher hydrophobicity and lower defect concentration could be obtained with more amount of reduced graphene oxide added into the ZnO seed layer. The modulatable reduced graphene oxide-incorporated ZnO NRs growth is promising for future ZnO NRs based nanodevice applications.

Oxidation driven ZnS Core-ZnO shell photocatalysts under controlled oxygen atmosphere for improved photocatalytic solar water splitting

Science.gov (United States)

Bak, Daegil; Kim, Jung Hyeun

2018-06-01

Zinc type photocatalysts attract great attentions in solar hydrogen production due to their easy availability and benign environmental characteristics. Spherical ZnS particles are synthesized with a facile hydrothermal method, and they are further used as core materials to introduce ZnO shell layer surrounding the core part by partial oxidation under controlled oxygen contents. The resulting ZnS core-ZnO shell photocatalysts represent the heterostructural type II band alignment. The existence of oxide layer also influences on proton adsorption power with an aid of strong base cites derived from highly electronegative oxygen atoms in ZnO shell layer. Photocatalytic water splitting reaction is performed to evaluate catalyst efficiency under standard one sun condition, and the highest hydrogen evolution rate (1665 μmolg-1h-1) is achieved from the sample oxidized at 16.2 kPa oxygen pressure. This highest hydrogen production rate is achieved in cooperation with increased light absorption and promoted charge separations. Photoluminescence analysis reveals that the improved visible light response is obtained after thermal oxidation process due to the oxygen vacancy states in the ZnO shell layer. Therefore, overall photocatalytic efficiency in solar hydrogen production is enhanced by improved charge separations, crystallinity, and visible light responses from the ZnS core-ZnO shell structures induced by thermal oxidation.

Quantitative and simultaneous analysis of the polarity of polycrystalline ZnO seed layers and related nanowires grown by wet chemical deposition

Science.gov (United States)

Guillemin, Sophie; Parize, Romain; Carabetta, Joseph; Cantelli, Valentina; Albertini, David; Gautier, Brice; Brémond, Georges; Fong, Dillon D.; Renevier, Hubert; Consonni, Vincent

2017-03-01

The polarity in ZnO nanowires is an important issue since it strongly affects surface configuration and reactivity, nucleation and growth, electro-optical properties, and nanoscale-engineering device performances. However, measuring statistically the polarity of ZnO nanowire arrays grown by chemical bath deposition and elucidating its correlation with the polarity of the underneath polycrystalline ZnO seed layer grown by the sol-gel process represents a major difficulty. To address that issue, we combine resonant x-ray diffraction (XRD) at Zn K-edge using synchrotron radiation with piezoelectric force microscopy and polarity-sensitive chemical etching to statistically investigate the polarity of more than 107 nano-objects both on the macroscopic and local microscopic scales, respectively. By using high temperature annealing under an argon atmosphere, it is shown that the compact, highly c-axis oriented ZnO seed layer is more than 92% Zn-polar and that only a few small O-polar ZnO grains with an amount less than 8% are formed. Correlatively, the resulting ZnO nanowires are also found to be Zn-polar, indicating that their polarity is transferred from the c-axis oriented ZnO grains acting as nucleation sites in the seed layer. These findings pave the way for the development of new strategies to form unipolar ZnO nanowire arrays as a requirement for a number of nanoscale-engineering devices like piezoelectric nanogenerators. They also highlight the great advantage of resonant XRD as a macroscopic, non-destructive method to simultaneously and statistically measure the polarity of ZnO nanowire arrays and of the underneath ZnO seed layer.

Synthesis of nanocomposite coating based on TiO2/ZnAl layer double hydroxides

International Nuclear Information System (INIS)

Jovanov, V.; Rudic, O.; Ranogajec, J.; Fidanchevska, E.

2017-01-01

The aim of this investigation was the synthesis of nanocomposite coatings based on Zn-Al layered double hydroxides (Zn-Al LDH) and TiO2. The Zn-Al LDH material, which acted as the catalyst support of the active TiO2 component (in the content of 3 and 10 wt. %), was synthesized by a low super saturation co-precipitation method. The interaction between the Zn-Al LDH and the active TiO2 component was accomplished by using vacuum evaporation prior to the mechanical activation and only by mechanical activation. The final suspension based on Zn-Al LDH and 10wt. % TiO2, impregnated only by mechanical activation, showed the optimal characteristics from the aspect of particle size distribution and XRD analysis. These properties had a positive effect on the functional properties of the coatings (photocatalytic activity and self-cleaning efficiency) after the water rinsing procedure. [es

Identification of conduction and hot electron property in ZnS, ZnO and SiO2

International Nuclear Information System (INIS)

Huang Jinzhao; Xu Zheng; Zhao Suling; Li Yuan; Yuan Guangcai; Wang Yongsheng; Xu Xurong

2007-01-01

The impact excitation and ionization is the most important process in layered optimization scheme and solid state cathodoluminescence. The conduction property (semiconductor property) of SiO 2 , ZnS and ZnO is studied based on organic/inorganic electroluminescence. The hot electron property (acceleration and multiplication property) of SiO 2 and ZnS is investigated based on the solid state cathodoluminescence. The results show that the SiO 2 has the fine hot electron property and the conduction property is not as good as ZnO and ZnS

Flexible Memristive Devices Based on InP/ZnSe/ZnS Core-Multishell Quantum Dot Nanocomposites.

Science.gov (United States)

Kim, Do Hyeong; Wu, Chaoxing; Park, Dong Hyun; Kim, Woo Kyum; Seo, Hae Woon; Kim, Sang Wook; Kim, Tae Whan

2018-05-02

The effects of the ZnS shell layer on the memory performances of flexible memristive devices based on quantum dots (QDs) with an InP/ZnSe/ZnS core-multishell structure embedded in a poly(methylmethacrylate) layer were investigated. The on/off ratios of the devices based on QDs with an InP/ZnSe core-shell structure and with an InP/ZnSe/ZnS core-multishell structure were approximately 4.2 × 10 2 and 8.5 × 10 3 , respectively, indicative of enhanced charge storage capability in the latter. After bending, the memory characteristics of the memristive devices based on QDs with the InP/ZnSe/ZnS structure were similar to those before bending. In addition, those devices maintained the same on/off ratios for retention time of 1 × 10 4 s, and the number of endurance cycles was above 1 × 10 2 . The reset voltages ranged from -2.3 to -3.1 V, and the set voltages ranged from 1.3 to 2.1 V, indicative of reliable electrical characteristics. Furthermore, the possible operating mechanisms of the devices are presented on the basis of the electron trapping and release mode.

A study on photoelectrochemical properties of ZnO@ZnS nanostructures synthesized via facile ion-exchange approach

Science.gov (United States)

Sharma, Akash; Sahoo, Pooja; Thangavel, R.

2018-05-01

In this work, ZnO nanorods (NRs) were fabricated, on cleaned ITO substrates by using sol-gel spin coating followed by hydrothermal technique. In order to coat zinc sulphide (ZnS) layers on the earlier prepared NRs a facile ion-exchange approach was adopted. The ZnO@ZnS nanostructures so prepared were characterised by using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), UV-visible spectroscopy and photoelectrochemical study. XRD spectra confirmed the hexagonal wurtzite structure of all the samples along with preferential c-axis orientation. Further it was also observed from the FESEM images that sulfidation process doesn't affect the structure of ZnO NRs arrays. From the absorption spectra it can be clearly observed that the light absorbing property has increased in within the visible range due to the formation of ZnS layer on the ZnO nanostructures, which is not possible for either of the material individually. The cyclic voltammetry results indicates the enhancement in photocurrent density after illumination for the synthesized nanostructures. The electrocatalytic behaviour of ZnO@ZnS electrodes have been studied using a 3-electrode system in presence of 0.1M NaOH electrolyte solution with respect to an Ag/AgCl reference electrode.

Effect of the ZnS shell layer on the charge storage capabilities of organic bistable memory devices fabricated utilizing CuInS2–ZnS core–shell quantum dots embedded in a poly(methylmethacrylate) layer

International Nuclear Information System (INIS)

Yun, Dong Yeol; Kim, Tae Whan; Kim, Sang Wook

2013-01-01

The electrical characteristics of organic bistable memory devices (OBDs) fabricated utilizing CuInS 2 (CIS) core or CIS–ZnS core–shell quantum dots (QDs) embedded in a poly(methylmethacrylate) (PMMA) layer on indium–tin-oxide (ITO) coated glass substrates were investigated. X-ray photoelectron spectroscopy spectra demonstrated that the stoichiometries of the QDs embedded in a PMMA layer were CIS or CIS–ZnS QDs. Current–voltage measurements on Al/CIS or CIS–ZnS QDs embedded in PMMA layer/ITO glass devices at 300 K showed current bistabilities. The maximum ON/OFF current ratios of the OBDs with CIS or CIS–ZnS QDs were approximately 1 × 10 3 and 1 × 10 5 , respectively. The retention number of ON and OFF states was measured by 1 × 10 5 . The memory mechanisms of the OBDs with CIS or CIS–ZnS QDs are described on the basis of the experimental results. - Highlights: • Organic bistable devices utilizing nanocomposites were fabricated. • Current–voltage results on organic bistable devices showed current bistabilities. • Maximum ON/OFF current ratio of the device with core–shell quantum dots was 1 × 10 5 . • Retention number of the device with core–shell quantum dots was 1 × 10 5

Efficient inverted bulk-heterojunction solar cells from low-temperature processing of amorphous ZnO buffer layers

KAUST Repository

Jagadamma, Lethy Krishnan; Abdelsamie, Maged; El Labban, Abdulrahman; Aresu, Emanuele; Ngongang Ndjawa, Guy Olivier; Anjum, Dalaver H.; Cha, Dong Kyu; Beaujuge, Pierre; Amassian, Aram

2014-01-01

In this report, we demonstrate that solution-processed amorphous zinc oxide (a-ZnO) interlayers prepared at low temperatures (∼100 °C) can yield inverted bulk-heterojunction (BHJ) solar cells that are as efficient as nanoparticle-based ZnO requiring comparably more complex synthesis or polycrystalline ZnO films prepared at substantially higher temperatures (150-400 °C). Low-temperature, facile solution-processing approaches are required in the fabrication of BHJ solar cells on flexible plastic substrates, such as PET. Here, we achieve efficient inverted solar cells with a-ZnO buffer layers by carefully examining the correlations between the thin film morphology and the figures of merit of optimized BHJ devices with various polymer donors and PCBM as the fullerene acceptor. We find that the most effective a-ZnO morphology consists of a compact, thin layer with continuous substrate coverage. In parallel, we emphasize the detrimental effect of forming rippled surface morphologies of a-ZnO, an observation which contrasts with results obtained in polycrystalline ZnO thin films, where rippled morphologies have been reported to improve efficiency. After optimizing the a-ZnO morphology at low processing temperature for inverted P3HT:PCBM devices, achieving a power conversion efficiency (PCE) of ca. 4.1%, we demonstrate inverted solar cells with low bandgap polymer donors on glass/flexible PET substrates: PTB7:PC71BM (PCE: 6.5% (glass)/5.6% (PET)) and PBDTTPD:PC71BM (PCE: 6.7% (glass)/5.9% (PET)). Finally, we show that a-ZnO based inverted P3HT:PCBM BHJ solar cells maintain ca. 90-95% of their initial PCE even after a full year without encapsulation in a nitrogen dry box, thus demonstrating excellent shelf stability. The insight we have gained into the importance of surface morphology in amorphous zinc oxide buffer layers should help in the development of other low-temperature solution-processed metal oxide interlayers for efficient flexible solar cells. This journal is

ZnS-Passivated CdSe/CdS Co-sensitized Mesoporous Zn2SnO4 Based Solar Cells

International Nuclear Information System (INIS)

Kim, Kyungho; Park, Ji Eun; Park, Eun Su; Park, Yun Chang; Kim, Joosun; Im, Chan; Lee, Man-Jong

2014-01-01

Graphical abstract: - Highlights: • Mesoporous Zn 2 SnO 4 sensitized by CdSe/CdS QDs were synthesized via a two-step sequential process. • Assembled QDs were characterized by HRTEM and STEM mapping. • Efficiency increase in CdSe/CdS co-sensitized Zn 2 SnO 4 DSSCs is discussed. • The role of ZnS passivation layer is discussed by impedance spectroscopy. - Abstract: CdS and CdSe/CdS quantum dot (QD) sensitizers were assembled onto mesoporous ternary Zn 2 SnO 4 photoanodes using a two-step sequential process of successive ionic layer absorption and reaction (SILAR) and chemical bath deposition (CBD) for QD-cosensitized solar cell applications. The assembled CdS and CdSe QDs were observed using high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), high-resolution TEM (HRTEM), and STEM/energy-dispersive X-ray spectroscopy (EDS) elemental mapping. CdSe/CdS cosensitized Zn 2 SnO 4 -based cells showed a higher absorption onset position, a stepwise band-edge level alignment, and, thereby, an improved power conversion efficiency (PCE) of 1.628% under one-sun conditions, which is the best result obtained using mesoporous Zn 2 SnO 4 reported to date. In addition, the effect of a ZnS passivation layer on the photovoltaic performance and aging behavior has been investigated. Electrochemical impedance spectroscopy (EIS) showed that the main role of the ZnS layer is to enhance the aging behavior of the CdSe/CdS/Zn 2 SnO 4 cells by improving the electron lifetime and charge recombination

Enhanced efficiency of organic solar cells by using ZnO as an electron-transport layer

Science.gov (United States)

Ullah, Irfan; Shah, Said Karim; Wali, Sartaj; Hayat, Khizar; Khattak, Shaukat Ali; Khan, Aurangzeb

2017-12-01

This paper reports the use of ZnO, processed by sol-gel, as an efficient electron-transport layer for inverted organic photovoltaic cells. The device with incorporated ZnO interlayer, annealed at 100 °C, between transparent electrode and blend film plays an effective role in enhancing photovoltaic properties: the short-circuit current density (J sc) doubles while open-circuit voltage (V oc) and fill factor increase by 0.12 V and 10 %, respectively. Power conversion efficiency (PCE) of solar cell increases, approximately, three times. The improvement in the PCE is attributed to the presence of ZnO which, being an electron-facilitating layer, provides an energy step for charge collection at electrodes.

Simultaneous Co-deposition of Zn-Mg Alloy Layers on Steel Strip by PVD Process

Energy Technology Data Exchange (ETDEWEB)

Kim, Tae Yeob [POSCO Technical Research Laboratories, Gwangyang (Korea, Republic of); Goodenough, Mark [Strategic Marketing, Tata Steel, Warwickshire (United Kingdom)

2011-12-15

This is the first release of an interim report on the development of coating technology of Zn-Mg alloy layers on steel strip by EML-PVD (electromagnetic levitation - physical vapor deposition) process in an air-to-air type continuous PVD pilot plant. It intends to introduce a basic principle of the EML-PVD process together with the high speed PVD pilot plant built in Posco. Due to the agitation effect provided by the high frequency induction coil, simultaneous evaporation of Zn and Mg from a droplet could produce alloy coating layers with Mg content of 6% to 12% depending on the composition of the droplet inside the coil. For its superior corrosion resistance, Zn-Mg alloy coated steel would be a very promising material for automotive, electrical appliances, and construction applications.

Simultaneous Co-deposition of Zn-Mg Alloy Layers on Steel Strip by PVD Process

International Nuclear Information System (INIS)

Kim, Tae Yeob; Goodenough, Mark

2011-01-01

This is the first release of an interim report on the development of coating technology of Zn-Mg alloy layers on steel strip by EML-PVD (electromagnetic levitation - physical vapor deposition) process in an air-to-air type continuous PVD pilot plant. It intends to introduce a basic principle of the EML-PVD process together with the high speed PVD pilot plant built in Posco. Due to the agitation effect provided by the high frequency induction coil, simultaneous evaporation of Zn and Mg from a droplet could produce alloy coating layers with Mg content of 6% to 12% depending on the composition of the droplet inside the coil. For its superior corrosion resistance, Zn-Mg alloy coated steel would be a very promising material for automotive, electrical appliances, and construction applications

Influence of the processing conditions on the structural properties of ZnO layers obtained by PECVD

Energy Technology Data Exchange (ETDEWEB)

Kitova, S; Danev, G, E-mail: skitova@clf.bas.b [Institute of Optical Materials and Technology ' Acad. J. Malinowski' , Bulgarian Academy of Sciences, Acad. G. Bonchev str., bl.109, 1113 Sofia (Bulgaria)

2010-11-01

The plasma enhanced chemical vapor deposition (PECVD) is a powerful and flexible instrument for depositing thin layers, nanocomposites or nanostructures. In this work ZnO layers have been grown by metal-organic PECVD (RF - 13.56 MHz) on Si wafers. Zn acetylacetonate has been used as a precursor and oxygen as oxidant. The influence of the oxygen content in gas mixture, the total pressure, substrate temperature and ZnO seed layer on the structural properties of the layers deposited on Si wafers has been studied. ZnO layer properties were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD data have shown that all layers are crystalline with hexagonal wurtzite structure. The crystallites are preferentially oriented along c-axis direction perpendicular to the substrate surfaces. The results obtained indicate that by controlling the oxygen content in gas mixture, the total pressure and substrate temperature during the film growth one can control the formation of c-axis phase and the crystallite grain size. Nanorods with good alignment, vertically orientated to the substrate surface can be observed in the layers deposited at low content of O{sub 2} in plasma at substrate temperature of 400 {sup o}C. Due to their structural characteristics these layers are potential materials for preparing chemical- and biosensors where inherently large surface to volume ratio of structured materials are important prerequisite for enhanced sensitivity.

Design and fabrication of enhanced corrosion resistance Zn-Al layered double hydroxides films based anion-exchange mechanism on magnesium alloys

International Nuclear Information System (INIS)

Zhou, Meng; Yan, Luchun; Ling, Hao; Diao, Yupeng; Pang, Xiaolu; Wang, Yanlin; Gao, Kewei

2017-01-01

Highlights: • Zn-Al LDHs film loaded nitrate anions has been fabricated on a magnesium alloy substrate via a facile hydrothermal crystallization method. • The Zn-Al-Cl LDHs and Zn-Al-VO_x LDHs film were obtained based on anion-exchange mechanism. • The Zn-Al-Cl LDHs and Zn-Al-VO_x LDHs film could effectively protect magnesium alloy. - Abstract: Layered double hydroxides (LDHs) with brucite-like layer structure and the facile exchangeability of intercalated anions had attracted tremendous interest in many fields because of their great importance for both fundamental studies and practical applications. Herein zinc-aluminum layered double hydroxides (Zn-Al LDHs) films intercalated with nitrate anions on the magnesium alloy substrate were designed and fabricated via a facile hydrothermal crystallization method. In order to obtain better corrosion resistance, chloride and vanadate anions were intercalated into the LDHs interlayers via the anion-exchange reaction. X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy and scanning electronic microscopy (SEM) were used to examine structure, composition and morphology of the Zn-Al-NO_3 LDHs, Zn-Al-Cl LDHs and Zn-Al-VO_x LDHs films. The corrosion resistance of the Zn-Al LDHs with different anion films was estimated by the electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization measurement. EIS and polarization curves measurements revealed that the magnesium alloy could be effectively protected by the Zn-Al-Cl LDHs and Zn-Al-VO_x LDHs films due to the blocking effect of chloride anions and the control-release ability of vanadate anions.

Design and fabrication of enhanced corrosion resistance Zn-Al layered double hydroxides films based anion-exchange mechanism on magnesium alloys

Energy Technology Data Exchange (ETDEWEB)

Zhou, Meng; Yan, Luchun; Ling, Hao; Diao, Yupeng; Pang, Xiaolu; Wang, Yanlin; Gao, Kewei, E-mail: kwgao@yahoo.com

2017-05-15

Highlights: • Zn-Al LDHs film loaded nitrate anions has been fabricated on a magnesium alloy substrate via a facile hydrothermal crystallization method. • The Zn-Al-Cl LDHs and Zn-Al-VO{sub x} LDHs film were obtained based on anion-exchange mechanism. • The Zn-Al-Cl LDHs and Zn-Al-VO{sub x} LDHs film could effectively protect magnesium alloy. - Abstract: Layered double hydroxides (LDHs) with brucite-like layer structure and the facile exchangeability of intercalated anions had attracted tremendous interest in many fields because of their great importance for both fundamental studies and practical applications. Herein zinc-aluminum layered double hydroxides (Zn-Al LDHs) films intercalated with nitrate anions on the magnesium alloy substrate were designed and fabricated via a facile hydrothermal crystallization method. In order to obtain better corrosion resistance, chloride and vanadate anions were intercalated into the LDHs interlayers via the anion-exchange reaction. X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy and scanning electronic microscopy (SEM) were used to examine structure, composition and morphology of the Zn-Al-NO{sub 3} LDHs, Zn-Al-Cl LDHs and Zn-Al-VO{sub x} LDHs films. The corrosion resistance of the Zn-Al LDHs with different anion films was estimated by the electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization measurement. EIS and polarization curves measurements revealed that the magnesium alloy could be effectively protected by the Zn-Al-Cl LDHs and Zn-Al-VO{sub x} LDHs films due to the blocking effect of chloride anions and the control-release ability of vanadate anions.

Cadmium free high efficiency Cu2ZnSn(S,Se4 solar cell with Zn1−xSnxOy buffer layer

Directory of Open Access Journals (Sweden)

Md. Asaduzzaman

2017-06-01

Full Text Available We have investigated the simulation approach of a one-dimensional online simulator named A Device Emulation Program and Tool (ADEPT2.1 and the device performances of a thin film solar cell based on Cu2ZnSn(S,Se4 (CZTSSe absorber have been measured. Initiating with a thin film photovoltaic device structure consisting of n-ZnO:Al/i-ZnO/Zn1-xSnxOy (ZTO/CZTSSe/Mo/SLG stack, a graded space charge region (SCR and an inverted surface layer (ISL were inserted between the buffer and the absorber. The cadmium (Cd free ZTO buffer, a competitive substitute to the CdS buffer, significantly contributes to improve the open-circuit voltage, Voc without deteriorating the short-circuit current density, Jsc. The optimized solar cell performance parameters including Voc, Jsc, fill factor (FF, and efficiency (η were calculated from the current density-voltage curve, also known as J–V characteristic curve. The FF was determined as 73.17%, which in turns, yields a higher energy conversion efficiency of 14.09%.

Hot exciton relaxation in multiple layers CdSe/ZnSe self-assembled quantum dots separated by thick ZnSe barriers

International Nuclear Information System (INIS)

Eremenko, M; Budkin, G; Reznitsky, A

2015-01-01

We have studied PL and PLE spectra of two samples (A and B) of MBE grown CdSe/ZnSe asymmetric double quantum wells with different amount of deposited CdSe layers separated by 14 nm ZnSe barrier. It has been found that PLE spectra of the states forming short wavelength side of the PL spectra of both deep and shallow QWs of the sample A as well as that of deep QW of the sample B demonstrate oscillating structure in the spectral ranges corresponding to exciton states of self-assembled quantum dots only. Meanwhile PLE spectra of the short wavelength states of shallow QW the sample B revealed pronounced oscillating structure with energy period of ZnSe LO phonon under excitation with photons in a wide energy range both in the regions of quantum-dot states and in that of free states in the ZnSe barrier. In these spectra creating of excitons with kinetic energies more than 0.3 eV was observed which considerably exceed the exciton binding energy as well as LO phonon energy (both appr. 0.03 eV). It has been concluded that oscillating structure of the PLE spectra arises due to cascade relaxation of hot excitons. We discuss the model which explains these experimental findings. (paper)

Hot exciton relaxation in multiple layers CdSe/ZnSe self-assembled quantum dots separated by thick ZnSe barriers

Science.gov (United States)

Eremenko, M.; Budkin, G.; Reznitsky, A.

2015-11-01

We have studied PL and PLE spectra of two samples (A and B) of MBE grown CdSe/ZnSe asymmetric double quantum wells with different amount of deposited CdSe layers separated by 14 nm ZnSe barrier. It has been found that PLE spectra of the states forming short wavelength side of the PL spectra of both deep and shallow QWs of the sample A as well as that of deep QW of the sample B demonstrate oscillating structure in the spectral ranges corresponding to exciton states of self-assembled quantum dots only. Meanwhile PLE spectra of the short wavelength states of shallow QW the sample B revealed pronounced oscillating structure with energy period of ZnSe LO phonon under excitation with photons in a wide energy range both in the regions of quantum-dot states and in that of free states in the ZnSe barrier. In these spectra creating of excitons with kinetic energies more than 0.3 eV was observed which considerably exceed the exciton binding energy as well as LO phonon energy (both appr. 0.03 eV). It has been concluded that oscillating structure of the PLE spectra arises due to cascade relaxation of hot excitons. We discuss the model which explains these experimental findings.

Synthesis and characterization of Zn-Ti layered double hydroxide intercalated with cinnamic acid for cosmetic application

Science.gov (United States)

Li, Yong; Tang, Liping; Ma, Xinxu; Wang, Xinrui; Zhou, Wei; Bai, Dongsheng

2017-08-01

The use of sunscreen is recently growing and their efficacy and safety must be taken into account since they are applied on the skin frequently. In this work, an organic ultraviolet (UV) ray absorbent, cinnamic acid (CA) was intercalated into Zn-Ti layered double hydroxide (LDH) by anion-exchange reaction. ZnTi-CA-LDH, a new type of host-guest UV-blocking material has been synthesized. Detailed structural and surface morphology of ZnTi-CA-LDH were characterized by XRD, FT-IR, SEM and TEM. ZnTi-CA-LDH exhibits a superior UV blocking ability compared to pure CA and ZnTi-CO3-LDH. The thermal stability of the intercalated ZnTi-CA-LDH was investigated by TG-DTA, which showed that the thermostability of CA was markedly enhanced after intercalation into ZnTi-CO3-LDH. The EPR data showed greatly decreased photocatalytic activity compared to common inorganic UV blocking agents TiO2 and ZnO. Furthermore, the sample was formulated in a sunscreen cream to study the matrix protective effect towards UV rays.

Characterization of thin Zn-Ni alloy coatings electrodeposited on low carbon steel

International Nuclear Information System (INIS)

El Hajjami, A.; Gigandet, M.P.; De Petris-Wery, M.; Catonne, J.C.; Duprat, J.J.; Thiery, L.; Raulin, F.; Pommier, N.; Starck, B.; Remy, P.

2007-01-01

The characteristics of initial layer formation in alkaline bath for Zn-Ni (12-15%) alloy electrodeposition on low carbon steel plates are detected in a nanometric thickness range by electron probe microanalysis (EPMA), with both bulk sample and thin film on substrate correction procedure, glow discharge optical emission spectroscopy (GDOES) and gracing incidence X-ray diffraction (GIXRD). The Zn-Ni coatings were elaborated using either intensiostatic or potentiostatic mode. A preferential deposition of Ni, in the initial thin layer, is detected by these analyses; according to EPMA and GDOES measurements, a layer rich in nickel at the interface substrate/deposit is observed (90 wt.% Ni) and approved by GIXRD; the thin layer of Ni formed in the first moments of electrolysis greatly inhibits the Zn deposition. The initial layer depends upon the relative ease of hydrogen and metal discharge and on the different substrate surfaces involved. The electrodeposition of zinc-nickel alloys in the first stage is a normal phenomenon of codeposition, whereby nickel - the more noble metal - is deposited preferentially

Preparation and electrical properties of ZnO/CdS/Cu (In, Zn) Se2 (ZCIS) heterojunctions

International Nuclear Information System (INIS)

Ivanov, V.A.; Gremenok, V.F.; Zalesski, V.B.; Kovalevski, V.I.; Bente, K.

2010-01-01

Full text : Cu(In,Zn)Se 2 (ZCIS) is one of the most promising materials for commercial photovoltaic applications. This is due to the high absorption coefficient of approximately 105 cm - 1 in a wide spectral region and a band gap that is in principle adjustable between 1.05 eV for CuInSe 2 and 2.60 eV for ZnSe. Therefore they are suggested to be used in thin film solar cells as absorber as well a wide-gap window layers. The Cu/(In+Zn) ratio of the ZCIS layers is the important parameter for the physical properties of the semiconductor material as well for the solar cell applications. The presented results consider the preparation as well as the chemical, structural and physical characterization of the electrical properties of the ZnO/CdS/CuIn0, 94Zn0, 06Se2 thin films hetero junctions. The ZCIS films were prepared by two-step selenization of Cu-In-ZnSe layers under N2 flow by evaporating a solid Se source close to samples. Such technology is especially suited for developments of industrial processing of large area ZCIS films suitable for solar cells. Cu-In-ZnSe layers were deposited onto Mo-coated soda lime glass substrates by thermal evaporation or sputtering. The Zn content in the ZCIS films was controlled by choise of In/ZnSe ratio in the initial alloy. Buffer layers of CdS were deposited onto the ZCIS films in the chemical bath. The ZnO films were deposited onto CdS by thermal evaporation. The ZnO and CdS films were detected to be polycrystalline with thicknesses of 0.4im and 0.06im respectively and revealed n-type conductivity. The ''Leit-C'' conductive glue was used as electrical contacts. The effective area of each cell was about 0.8 cm2. Under non-illuminated conditions, I - V characteristics of the heterojunctions were approximately exponential at low voltages according to the standard diode equation I=Io[exp(eV/nkT)-1], with a slight deviation from this behaviour at high voltages due to a series of resistance effects. The capacitance of the heterojunctions

Enhanced electrical properties of dual-layer channel ZnO thin film transistors prepared by atomic layer deposition

Science.gov (United States)

Li, Huijin; Han, Dedong; Dong, Junchen; Yu, Wen; Liang, Yi; Luo, Zhen; Zhang, Shengdong; Zhang, Xing; Wang, Yi

2018-05-01

The thin film transistors (TFTs) with a dual-layer channel structure combing ZnO thin layer grown at 200 °C and ZnO film grown at 120 °C by atomic layer deposition are fabricated. The dual-layer channel TFT exhibits a low leakage current of 2.8 × 10-13 A, Ion/Ioff ratio of 3.4 × 109, saturation mobility μsat of 12 cm2 V-1 s-1, subthreshold swing (SS) of 0.25 V/decade. The SS value decreases to 0.18 V/decade after the annealing treatment in O2 due to the reduction of the trap states at the channel/dielectric interface and in the bulk channel layer. The enhanced performance obtained from the dual-layer channel TFTs is due to the ability of maintaining high mobility and suppressing the increase in the off-current at the same time.

Antireflective conducting nanostructures with an atomic layer deposited an AlZnO layer on a transparent substrate

International Nuclear Information System (INIS)

Park, Hyun-Woo; Ji, Seungmuk; Herdini, Diptya Suci; Lim, Hyuneui; Park, Jin-Seong; Chung, Kwun-Bum

2015-01-01

Graphical abstract: - Highlights: • We investigated the antireflective conducting nanostructures on a transparent substrate using atomic layer deposited AlZnO films. • The conformal AlZnO layer on a transparent nanostructured substrate exhibited 5.52 × 10 −4 Ω cm in resistivity and 88% in average visible transmittance. • The improvement of transparency was explained by the gradual changes of the refractive index in the film depth direction. • The decrease in electrical resistivity is strongly correlated to the increased surface area with the nanostructure and the change of chemical bonding states. - Abstract: The antireflective conducting nanostructures on a transparent substrate were shown to have enhanced optical and electrical properties via colloidal lithography and atomic layer deposition. The conformal AlZnO layer on a transparent nanostructured substrate exhibited 5.52 × 10 −4 Ω cm in resistivity and 88% in average visible transmittance, both of which were superior to those of a flat transparent conducting substrate. The improvement of transparency was explained by the gradual changes of the refractive index in the film depth direction. The decrease in electrical resistivity is strongly correlated to the increased surface area with the nanostructure and the change of chemical bonding states.

A Comparative Study on Structural and Optical Properties of ZnO Micro-Nanorod Arrays Grown on Seed Layers Using Chemical Bath Deposition and Spin Coating Methods

Directory of Open Access Journals (Sweden)

Sibel MORKOÇ KARADENİZ

2016-11-01

Full Text Available In this study, Zinc Oxide (ZnO seed layers were prepared on Indium Tin Oxide (ITO substrates by using Chemical Bath Deposition (CBD method and Sol-gel Spin Coating (SC method. ZnO micro-nanorod arrays were grown on ZnO seed layers by using Hydrothermal Synthesis method. Seed layer effects of structural and optical properties of ZnO arrays were characterized. X-ray diffractometer (XRD, Scanning Electron Microscopy (SEM and Ultraviolet Visible (UV-Vis Spectrometer were used for analyses. ZnO micro-nanorod arrays consisted of a single crystalline wurtzite ZnO structure for each seed layer. Besides, ZnO rod arrays were grown smoothly and vertically on SC seed layer, while ZnO rod arrays were grown randomly and flower like structures on CBD seed layer. The optical absorbance peaks found at 422 nm wavelength in the visible region for both ZnO arrays. Optical bandgap values were determined by using UV-Vis measurements at 3.12 and 3.15 eV for ZnO micro-nanorod arrays on CBD seed layer and for ZnO micro-nanorod arrays on SC-seed layer respectively.DOI: http://dx.doi.org/10.5755/j01.ms.22.4.13443

Oxygen reduction at electrodeposited ZnO layers in alkaline solution

International Nuclear Information System (INIS)

Prestat, M.; Vucko, F.; Lescop, B.; Rioual, S.; Peltier, F.; Thierry, D.

2016-01-01

Zinc oxide (ZnO) layers were electrodeposited from an aqueous nitrate bath at 62 °C on copper substrates. At −0.9 V (vs. saturated calomel reference electrode), the growth rate is 600 nm min −1 . In the early stages of the deposition, the layers are porous. At longer deposition times, the surface becomes dense and rough. The wurtzite crystalline structure is confirmed by XRD measurements and the chemical composition of the ZnO surface was assessed by EDX and XPS. The oxygen reduction reaction (ORR) was investigated at room temperature in a 10 −3 M KOH solution with KCl as supporting electrolyte. The ORR onset potential is found to be much larger than that of platinum taken as reference electrocatalyst. Rotating ring-disk electrode experiments evidence a negligible production of hydrogen peroxide as intermediate product of the reaction. The latter follows thus a direct four-electron pathway at pH ∼11.

Water-assisted nitrogen mediated crystallisation of ZnO films

Energy Technology Data Exchange (ETDEWEB)

Muydinov, R. [Technical University Berlin, Institute of Semiconducting- and High-Frequency Technologies, Einsteinufer 25, 10587 Berlin (Germany); Steigert, A. [Helmholtz-Zentrum Berlin, Institute of Heterogeneous Material Systems, Albert-Einstein-Straße 15, 12489 Berlin (Germany); Schönau, S.; Ruske, F. [Helmholtz-Zentrum Berlin, Institute of Silicon Photovoltaics, Kekuléstraße 5, 12489 Berlin (Germany); Kraehnert, R.; Eckhardt, B. [Technical University Berlin, Institute of Technical Chemistry, Straße des 17. Juni 124, 10623 Berlin (Germany); Lauermann, I. [Helmholtz-Zentrum Berlin, Institute of Heterogeneous Material Systems, Albert-Einstein-Straße 15, 12489 Berlin (Germany); Szyszka, B. [Technical University Berlin, Institute of Semiconducting- and High-Frequency Technologies, Einsteinufer 25, 10587 Berlin (Germany)

2015-09-01

Nitrogen mediated crystallisation (NMC) being performed in oxygen atmosphere at T ≥ 600 °C is an effective approach to obtain very well (00l)-textured ZnO films. A use of NMC-seed layers remarkably improves electrical transport properties of subsequently deposited ZnO:Al contacts. In this work, crystallisation of quasi-amorphous, nitrogen doped ZnO seed layers has been performed using water vapours at overpressure and temperatures around 100 °C. This approach allows employment of soda-lime float-glass or temperature sensitive film stacks as a substrate. We propose here possible mechanism of water-assisted NMC and grope for optimised crystallisation conditions on the basis of optical, microscopic, and textural investigation. Low temperature water-assisted crystallisation of 20 nm thick ZnO layers was compared with high temperature annealing methods in terms of composition, microstructure and crystallinity. Electrical properties such as electron Hall mobility (μ{sub e}), concentration of free electrons (N{sub e}) and sheet resistance (R{sub sh}) have been evaluated and compared for functional ZnO:Al films obtained on glass and on differently crystallised NMC-seed layers. It was found that the crystallised with water assistance at low temperature ZnO seed layers provide comparable improvement in crystallinity and electrical properties of subsequently grown functional ZnO:Al films with respect to the ones crystallised at high temperature. Use of optimised water-assisted crystallisation of seed layers has allowed decreasing R{sub sh} of thin (130–270 nm) functional ZnO:Al films twice compared to the glass substrate. Both provide this effect: increase in μ{sub e} and increase of N{sub e}. - Highlights: • Amorphous ZnO:N films can be crystallised in autoclave at temperatures around 100 °C. • Such water-assisted crystallisation provides well-crystalline ZnO seed layers. • Use of these seed layers resulted in stress-free ZnO:Al contacts with twice lower R

Effects of Chromium Dopant on Ultraviolet Photoresponsivity of ZnO Nanorods

Science.gov (United States)

Mokhtari, S.; Safa, S.; Khayatian, A.; Azimirad, R.

2017-07-01

Structural and optical properties of bare ZnO nanorods, ZnO-encapsulated ZnO nanorods, and Cr-doped ZnO-encapsulated ZnO nanorods have been investigated. Encapsulated ZnO nanorods were grown using a simple two-stage method in which ZnO nanorods were first grown on a glass substrate directly from a hydrothermal bath, then encapsulated with a thin layer of Cr-doped ZnO by dip coating. Comparative study of x-ray diffraction patterns showed that Cr was successfully incorporated into the shell layer of ZnO nanorods. Moreover, energy-dispersive x-ray spectroscopy confirmed presence of Cr in this sample. It was observed that the thickness of the shell layer around the core of the ZnO nanorods was at least about 20 nm. Transmission electron microscopy of bare ZnO nanorods revealed single-crystalline structure. Based on optical results, both the encapsulation process and addition of Cr dopant decreased the optical bandgap of the samples. Indeed, the optical bandgap values of Cr-doped ZnO-encapsulated ZnO nanorods, ZnO-encapsulated ZnO nanorods, and bare ZnO nanorods were 2.89 eV, 3.15 eV, and 3.34 eV, respectively. The ultraviolet (UV) parameters demonstrated that incorporation of Cr dopant into the shell layer of ZnO nanorods considerably facilitated formation and transportation of photogenerated carriers, optimizing their performance as a practical UV detector. As a result, the photocurrent of the Cr-doped ZnO-encapsulated ZnO nanorods was the highest (0.6 mA), compared with ZnO-encapsulated ZnO nanorods and bare ZnO nanorods (0.21 mA and 0.06 mA, respectively).

Mg-doped ZnO thin films deposited by the atomic layer chemical vapor deposition for the buffer layer of CIGS solar cell

Energy Technology Data Exchange (ETDEWEB)

Li, Zhao-Hui [Department of Electronics Engineering, Gachon University, Soojung-gu, Seongnam city 461-701, Gyunggi-do (Korea, Republic of); Center for Photovoltaic and Solar Energy, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen city 518055 (China); Cho, Eou-Sik [Department of Electronics Engineering, Gachon University, Soojung-gu, Seongnam city 461-701, Gyunggi-do (Korea, Republic of); Kwon, Sang Jik, E-mail: sjkwon@gachon.ac.kr [Department of Electronics Engineering, Gachon University, Soojung-gu, Seongnam city 461-701, Gyunggi-do (Korea, Republic of)

2014-09-30

Highlights: • Mg-doped ZnO film as CIGS buffer was prepared by ALD process. • The grain size of ZnO-like hexagonal phase decreased with Mg content. • The transmittance and crystallinity increased but the band gap decreased with temperature. - Abstract: Mg-doped ZnO [(Zn, Mg)O] thin films were prepared by atomic layer chemical vapor deposition (ALCVD) process with different Mg content, using diethyl zinc, biscyclopentadienyl magnesium, and water as the metal and oxygen sources, respectively. The ratio of Mg to Zn was varied by changing the pulse ratio of MgCp{sub 2} to DEZn precursor to study its effect on the properties of (Zn, Mg)O thin films. From the experimental results, it was shown that the grain size of the ZnO-like hexagonal phase (Zn, Mg)O decreased as the Mg content increased. But the transmittance and optical band gap of (Zn, Mg)O films increased with the increase of the Mg content. In addition, the effect of the substrate temperature on the properties of (Zn, Mg)O films was also investigated. The deposition rate, transmittance, and crystallinity of (Zn, Mg)O films increased as the substrate temperature increased. But its band gap decreased slightly with the increase of substrate temperature.

Electrochemical deposition and characterization of Zn-Al layered double hydroxides (LDHs) films on magnesium alloy

Energy Technology Data Exchange (ETDEWEB)

Wu, Fengxia; Liang, Jun, E-mail: jliang@licp.cas.cn; Peng, Zhenjun; Liu, Baixing

2014-09-15

Highlights: • Zn-Al LDHs film was prepared on AZ91D Mg alloy by electrochemical deposition. • The Zn-Al LDHs film was uniform and dense with some small flaws and cracks. • The Zn-Al LDHs film had high adhesion and good corrosion protection to Mg alloy. - Abstract: A zinc-aluminum layered double hydroxides (Zn-Al LDHs) film was prepared on AZ91D magnesium (Mg) alloy substrate by electrochemical deposition method. The characteristics of the film were investigated by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) and scanning electronic microscope (SEM). It was found that the electrodeposited film was composed of crystalline Zn-Al LDHs with nitrate intercalation. The Zn-Al LDHs film was uniform and dense though there also presented some small flaws and cracks. The cross cut tape test showed that the film adhered well to the substrate. Polarization and EIS measurements revealed that the LDHs coated Mg alloy had better corrosion resistance compared to that of the uncoated one in 3.5 wt.% NaCl solution, indicating that the Zn-Al LDHs film could effectively protect Mg alloy from corrosion.

Electrochemical deposition and characterization of Zn-Al layered double hydroxides (LDHs) films on magnesium alloy

International Nuclear Information System (INIS)

Wu, Fengxia; Liang, Jun; Peng, Zhenjun; Liu, Baixing

2014-01-01

Highlights: • Zn-Al LDHs film was prepared on AZ91D Mg alloy by electrochemical deposition. • The Zn-Al LDHs film was uniform and dense with some small flaws and cracks. • The Zn-Al LDHs film had high adhesion and good corrosion protection to Mg alloy. - Abstract: A zinc-aluminum layered double hydroxides (Zn-Al LDHs) film was prepared on AZ91D magnesium (Mg) alloy substrate by electrochemical deposition method. The characteristics of the film were investigated by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) and scanning electronic microscope (SEM). It was found that the electrodeposited film was composed of crystalline Zn-Al LDHs with nitrate intercalation. The Zn-Al LDHs film was uniform and dense though there also presented some small flaws and cracks. The cross cut tape test showed that the film adhered well to the substrate. Polarization and EIS measurements revealed that the LDHs coated Mg alloy had better corrosion resistance compared to that of the uncoated one in 3.5 wt.% NaCl solution, indicating that the Zn-Al LDHs film could effectively protect Mg alloy from corrosion

High spin levels in 62Zn, 64Zn, 66Zn, and 68Zn

International Nuclear Information System (INIS)

Bruandet, J.-F.

1976-01-01

Investigation by in-beam gamma spectroscopy of high-spin states in the even zinc isotopes has been made using the Ni(α,2nγ)Zn reactions at Esub(α) approximately equal to 30MeV for 62 Zn, 64 Zn and 66 Zn, and the 65 Cu(α,pγ) reaction at Esub(α) approximately equal to 18MeV for 68 Zn. The high-spin states feeding by varying the incident particles: p, 3 He,α, 12 C is discussed. It is pointed out that the gsub(9/2) orbital plays an important role in the structure of the high-spin states. The variation of the inertia momentum throughout the yrast line shows a backbending behavior and a shape transition associated to the occurence, for J>6, of rotational states is speculated [fr

Synthesis and characterization of Zn-doped MgAl-layered double hydroxide nanoparticles as PVC heat stabilizer

International Nuclear Information System (INIS)

Wang, Gongling; Yang, Mei; Li, Zhiwen; Lin, Kaifeng; Jin, Quan; Xing, Chaojian; Hu, Zhudong; Wang, Dan

2013-01-01

Zn-doped MgAl-layered double hydroxides (LDHs) with M 2+ /M 3+ = 2 and different molar ratios of Mg/Zn have been synthesized by modified homogeneous co-precipitation method and characterized by powder X-ray diffraction, Transmission electron microscopy, Fourier transform infrared spectrum and thermogravimetry, and differential thermal analysis techniques. The thermal stabilizing effects of different LDHs on PVC were studied by Congo red test and thermal aging test. All of the nanoparticles show plate-like morphology and the average diameter of particles is around 90 nm. Results show that the introduction of Zn increased the average bond length and area of the layers of LDHs, therefore enhanced the adsorption ability on HCl gas which was generated during degradation of PVC to improve the thermal stability of PVC. LDHs with molar ratio of Mg/Zn = 1.0 shows the best thermal stabilizing effect on PVC

Synthesis and characterization of Zn-doped MgAl-layered double hydroxide nanoparticles as PVC heat stabilizer

Energy Technology Data Exchange (ETDEWEB)

Wang, Gongling; Yang, Mei [Chinese Academy of Sciences, State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering (China); Li, Zhiwen; Lin, Kaifeng [Harbin Institute of Technology, Academy of Fundamental Interdisciplinary Sciences (China); Jin, Quan; Xing, Chaojian; Hu, Zhudong [Chinese Academy of Sciences, State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering (China); Wang, Dan, E-mail: danwang@mail.ipe.ac.cn [Harbin Institute of Technology, Academy of Fundamental Interdisciplinary Sciences (China)

2013-09-15

Zn-doped MgAl-layered double hydroxides (LDHs) with M{sup 2+}/M{sup 3+} = 2 and different molar ratios of Mg/Zn have been synthesized by modified homogeneous co-precipitation method and characterized by powder X-ray diffraction, Transmission electron microscopy, Fourier transform infrared spectrum and thermogravimetry, and differential thermal analysis techniques. The thermal stabilizing effects of different LDHs on PVC were studied by Congo red test and thermal aging test. All of the nanoparticles show plate-like morphology and the average diameter of particles is around 90 nm. Results show that the introduction of Zn increased the average bond length and area of the layers of LDHs, therefore enhanced the adsorption ability on HCl gas which was generated during degradation of PVC to improve the thermal stability of PVC. LDHs with molar ratio of Mg/Zn = 1.0 shows the best thermal stabilizing effect on PVC.

Structure and optical properties of cored wurtzite (Zn,Mg)O heteroepitaxial nanowires

International Nuclear Information System (INIS)

Heo, Y.W.; Abernathy, C.; Pruessner, K.; Sigmund, W.; Norton, D.P.; Overberg, M.; Ren, F.; Chisholm, M.F.

2004-01-01

The synthesis, structure, and optical properties of one-dimensional heteroepitaxial cored (Zn,Mg)O semiconductor nanowires grown by a catalyst-driven molecular beam epitaxy technique are discussed. The structures form spontaneously in a Zn, Mg and O 2 /O 3 flux, consisting of a single crystal, Zn-rich Zn 1-x Mg x O(x 1-y Mg y O(y>>0.02) sheath. High resolution Z-contrast scanning transmission electron microscopy shows core diameters as small as 4 nm. The cored structure forms spontaneously under constant flux due to a bimodal growth mechanism in which the core forms via bulk like vapor-liquid-solid growth, while the outer sheath grows as a heteroepitaxial layer. Temperature-dependent photoluminescence shows a slight blueshift in the near band edge peak, which is attributed to a few percent Mg doping in the nanoscale ZnO core. The catalyst-driven molecular beam epitaxy technique provides for site-specific nanorod growth on arbitrary substrates

Exotic octupole deformation in proton-rich Z=N nuclei

Energy Technology Data Exchange (ETDEWEB)

Takami, Satoshi; Yabana, K [Niigata Univ. (Japan); Matsuo, M

1998-03-01

We study static non-axial octupole deformations in proton-rich Z=N nuclei, {sup 64}Ge, {sup 68}Se, {sup 72}Kr, {sup 76}Sr, {sup 80}Zr and {sup 84}Mo, by using the Skyrme Hartree-Fock plus BCS method with no restrictions on the nuclear shape. The calculation predicts that the oblate ground state in {sup 68}Se is extremely soft for the Y{sub 33} triangular deformation, and that in {sup 80}Zr the low-lying local minimum state coexisting with the prolate ground state has the Y{sub 32} tetrahedral deformation. (author)

Theoretical studies on a TeO2/ZnO/diamond-layered structure for zero TCD SAW devices

Science.gov (United States)

Dewan, Namrata; Sreenivas, K.; Gupta, Vinay

2008-08-01

High-frequency surface acoustic wave (SAW) devices based on diamond substrate are useful because of their very high SAW velocity. In the present work, SAW propagation characteristics, such as phase velocity, coupling coefficient and temperature coefficient of delay (TCD) of a TeO2/ZnO/diamond-layered structure, are examined using theoretical calculations. The ZnO/diamond bi-layer structure is found to exhibit a high positive TCD value. A zero TCD device structure is obtained after integration with a TeO2 over layer having a negative TCD value. Introduction of a non-piezoelectric TeO2 over layer on the bi-layer structure (ZnO/diamond) increases the coupling coefficient. A relatively low thickness of TeO2 thin film (~(1.6-3.1) × 10-3λ) is required to achieve temperature-stable SAW devices based on diamond.

Expanding Thermal Plasma Chemical Vapour Deposition of ZnO:Al Layers for CIGS Solar Cells

Directory of Open Access Journals (Sweden)

K. Sharma

2014-01-01

Full Text Available Aluminium-doped zinc oxide (ZnO:Al grown by expanding thermal plasma chemical vapour deposition (ETP-CVD has demonstrated excellent electrical and optical properties, which make it an attractive candidate as a transparent conductive oxide for photovoltaic applications. However, when depositing ZnO:Al on CIGS solar cell stacks, one should be aware that high substrate temperature processing (i.e., >200°C can damage the crucial underlying layers/interfaces (such as CIGS/CdS and CdS/i-ZnO. In this paper, the potential of adopting ETP-CVD ZnO:Al in CIGS solar cells is assessed: the effect of substrate temperature during film deposition on both the electrical properties of the ZnO:Al and the eventual performance of the CIGS solar cells was investigated. For ZnO:Al films grown using the high thermal budget (HTB condition, lower resistivities, ρ, were achievable (~5 × 10−4 Ω·cm than those grown using the low thermal budget (LTB conditions (~2 × 10−3 Ω·cm, whereas higher CIGS conversion efficiencies were obtained for the LTB condition (up to 10.9% than for the HTB condition (up to 9.0%. Whereas such temperature-dependence of CIGS device parameters has previously been linked with chemical migration between individual layers, we demonstrate that in this case it is primarily attributed to the prevalence of shunt currents.

Improving scattering layer through mixture of nanoporous spheres and nanoparticles in ZnO-based dye-sensitized solar cells.

Science.gov (United States)

Kim, Chohui; Choi, Hongsik; Kim, Jae Ik; Lee, Sangheon; Kim, Jinhyun; Lee, Woojin; Hwang, Taehyun; Kang, Suji; Moon, Taeho; Park, Byungwoo

2014-01-01

A scattering layer is utilized by mixing nanoporous spheres and nanoparticles in ZnO-based dye-sensitized solar cells. Hundred-nanometer-sized ZnO spheres consisting of approximately 35-nm-sized nanoparticles provide not only effective light scattering but also a large surface area. Furthermore, ZnO nanoparticles are added to the scattering layer to facilitate charge transport and increase the surface area as filling up large voids. The mixed scattering layer of nanoparticles and nanoporous spheres on top of the nanoparticle-based electrode (bilayer geometry) improves solar cell efficiency by enhancing both the short-circuit current (J sc) and fill factor (FF), compared to the layer consisting of only nanoparticles or nanoporous spheres.

Design and fabrication of enhanced corrosion resistance Zn-Al layered double hydroxides films based anion-exchange mechanism on magnesium alloys

Science.gov (United States)

Zhou, Meng; Yan, Luchun; Ling, Hao; Diao, Yupeng; Pang, Xiaolu; Wang, Yanlin; Gao, Kewei

2017-05-01

Layered double hydroxides (LDHs) with brucite-like layer structure and the facile exchangeability of intercalated anions had attracted tremendous interest in many fields because of their great importance for both fundamental studies and practical applications. Herein zinc-aluminum layered double hydroxides (Zn-Al LDHs) films intercalated with nitrate anions on the magnesium alloy substrate were designed and fabricated via a facile hydrothermal crystallization method. In order to obtain better corrosion resistance, chloride and vanadate anions were intercalated into the LDHs interlayers via the anion-exchange reaction. X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy and scanning electronic microscopy (SEM) were used to examine structure, composition and morphology of the Zn-Al-NO3 LDHs, Zn-Al-Cl LDHs and Zn-Al-VOx LDHs films. The corrosion resistance of the Zn-Al LDHs with different anion films was estimated by the electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization measurement. EIS and polarization curves measurements revealed that the magnesium alloy could be effectively protected by the Zn-Al-Cl LDHs and Zn-Al-VOx LDHs films due to the blocking effect of chloride anions and the control-release ability of vanadate anions.

Carrier transport in flexible organic bistable devices of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) polymer layer

International Nuclear Information System (INIS)

Son, Dong-Ick; Park, Dong-Hee; Choi, Won Kook; Cho, Sung-Hwan; Kim, Won-Tae; Kim, Tae Whan

2009-01-01

The bistable effects of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) (PMMA) polymer single layer by using flexible polyethylene terephthalate (PET) substrates were investigated. Transmission electron microscopy (TEM) images revealed that ZnO nanoparticles were formed inside the PMMA polymer layer. Current-voltage (I-V) measurement on the Al/ZnO nanoparticles embedded in an insulating PMMA polymer layer/ITO/PET structures at 300 K showed a nonvolatile electrical bistability behavior with a flat-band voltage shift due to the existence of the ZnO nanoparticles, indicative of trapping, storing, and emission of charges in the electronic states of the ZnO nanoparticles. The carrier transport mechanism of the bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results by analyzing the effect of space charge.

Ultraviolet electroluminescence from nitrogen-doped ZnO-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique.

Science.gov (United States)

Chien, Jui-Fen; Liao, Hua-Yang; Yu, Sheng-Fu; Lin, Ray-Ming; Shiojiri, Makoto; Shyue, Jing-Jong; Chen, Miin-Jang

2013-01-23

Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at λ ≈ 370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation. The result indicates that the in situ atomic layer doping technique is an effective approach to tailoring the electrical properties of materials in device applications.

ZnSe/ZnSeTe Superlattice Nanotips

Directory of Open Access Journals (Sweden)

Young SJ

2010-01-01

Full Text Available Abstract The authors report the growth of ZnSe/ZnSeTe superlattice nanotips on oxidized Si(100 substrate. It was found the nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from the ZnSe/ZnSeTe superlattice nanotips were much larger than that observed from the homogeneous ZnSeTe nanotips. Furthermore, it was found that activation energies for the ZnSe/ZnSeTe superlattice nanotips with well widths of 16, 20, and 24 nm were 76, 46, and 19 meV, respectively.

Performance Improvement of GaN-Based Flip-Chip White Light-Emitting Diodes with Diffused Nanorod Reflector and with ZnO Nanorod Antireflection Layer

Directory of Open Access Journals (Sweden)

Hsin-Ying Lee

2014-01-01

Full Text Available The GaN-based flip-chip white light-emitting diodes (FCWLEDs with diffused ZnO nanorod reflector and with ZnO nanorod antireflection layer were fabricated. The ZnO nanorod array grown using an aqueous solution method was combined with Al metal to form the diffused ZnO nanorod reflector. It could avoid the blue light emitted out from the Mg-doped GaN layer of the FCWLEDs, which caused more blue light emitted out from the sapphire substrate to pump the phosphor. Moreover, the ZnO nanorod array was utilized as the antireflection layer of the FCWLEDs to reduce the total reflection loss. The light output power and the phosphor conversion efficiency of the FCWLEDs with diffused nanorod reflector and 250 nm long ZnO nanorod antireflection layer were improved from 21.15 mW to 23.90 mW and from 77.6% to 80.1% in comparison with the FCWLEDs with diffused nanorod reflector and without ZnO nanorod antireflection layer, respectively.

Control of ZnO Nanorod Defects to Enhance Carrier Transportation in p-Cu₂O/i-ZnO Nanorods/n-IGZO Heterojunction.

Science.gov (United States)

Ke, Nguyen Huu; Trinh, Le Thi Tuyet; Mung, Nguyen Thi; Loan, Phan Thi Kieu; Tuan, Dao Anh; Truong, Nguyen Huu; Tran, Cao Vinh; Hung, Le Vu Tuan

2017-01-01

The p-Cu₂O/i-ZnO nanorods/n-IGZO heterojunctions were fabricated by electrochemical and sputtering method. ZnO nanorods were grown on conductive indium gallium zinc oxide (IGZO) thin film and then p-Cu₂O layer was deposited on ZnO nanorods to form the heterojunction. ZnO nanorods play an important role in carrier transport mechanisms and performance of the junction. The changing of defects in ZnO nanorods by annealing samples in air and vacuum have studied. The XRD, photoluminescence (PL) spectroscopy, and FTIR were used to study about structure, and defects in ZnO nanorods. The SEM, i–V characteristics methods were also used to define structure, electrical properties of the heterojunctions layers. The results show that the defects in ZnO nanorods affected remarkably on performance of heterojunctions of solar cells.

Epitaxial GaN around ZnO nanopillars

Energy Technology Data Exchange (ETDEWEB)

Fikry, Mohamed; Scholz, Ferdinand [Institut fuer Optoelektronik, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany); Madel, Manfred; Tischer, Ingo; Thonke, Klaus [Institut fuer Quantenmaterie, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany)

2011-07-01

We report on an investigation of the epitaxial quality of GaN layers overgrown coaxially around ZnO nanopillars. In a first step, regularly arranged ZnO nanopillars were grown using pre-patterning by e-beam lithography or self-organized hexagonal polystyrene sphere masks. Alternatively, ZnO pillars were also successfully grown on top of GaN pyramids. In a second step, GaN layers were grown around the ZnO pillars by Metal Organic Vapor Phase Epitaxy. At growth temperatures above 800 C, the ZnO pillars are dissolved by the hydrogen carrier gas leaving hollow GaN nanotubes. Characterization involved photoluminescence (PL), scanning electron microscopy and cathodoluminescence. The fair quality of the deposited GaN layers is confirmed by a sharp low temperature PL peak at 3.48 eV attributed to the donor bound exciton emission. Further peaks at 3.42 eV and 3.29 eV show the possible existence of basal plane and prismatic stacking faults.

Resonant Raman scattering of ZnS, ZnO, and ZnS/ZnO core/shell quantum dots

Energy Technology Data Exchange (ETDEWEB)

Milekhin, A.G. [Institute of Semiconductor Physics, Novosibirsk (Russian Federation); Novosibirsk State University, Novosibirsk (Russian Federation); Yeryukov, N.A.; Sveshnikova, L.L.; Duda, T.A. [Institute of Semiconductor Physics, Novosibirsk (Russian Federation); Himcinschi, C. [TU Bergakademie Freiberg, Institut fuer Theoretische Physik, Freiberg (Germany); Zenkevich, E.I. [Belarussian National Technical University, Minsk (Belarus); Zahn, D.R.T. [Chemnitz University of Technology, Semiconductor Physics, Chemnitz (Germany)

2012-05-15

Resonant Raman scattering by optical phonon modes as well as their overtones was investigated in ZnS and ZnO quantum dots grown by the Langmuir-Blodgett technique. The in situ formation of ZnS/ZnO core/shell quantum dots was monitored by Raman spectroscopy during laser illumination. (orig.)

Study of {sup 4}the influence of annealing parameters on the optical and compositional properties of ZnS, ZnS:Mn and ZnS:Sm grown by Sol Gel

Energy Technology Data Exchange (ETDEWEB)

Gomez-Barojas, E [CIDS-IC, BUAP. Ed. 103C, C.U. Col. San Manuel. Puebla, Pue. 72570 (Mexico); Sanchez-Mora, E; Silva-Gonzalez, R [Instituto de Fisica, BUAP. Apdo. Postal J-48 Puebla, Pue. 72570 (Mexico); Mendoza-Dorantes, T; Castillo-Abriz, C, E-mail: egomez@sirio.ifuap.buap.m [FIQ, BUAP. Puebla, Pue. 72570 (Mexico)

2009-05-01

Samples with 3 layers of ZnS were prepared on glass substrate by the Sol Gel method. The annealing parameters were varied as follows: each of the 3 constituent layers of sample 1 was annealed at 400 deg. C for 12 hrs. For sample 2, the 1rst and 2nd layers were annealed at 300 deg. C for 2hrs each and the 3rd one at 400 deg. C for 12 hrs. For sample 3, the 1st and 2nd layers were annealed at 200 deg. C for 2hrs each and the 3rd at 400 deg. C for 12 hrs. Furthermore, 2 samples: one with 3 layers of ZnS:Mn and the other with 3 layers of ZnS:Sm were prepared and annealed similarly to sample 2. AES depth profiles show a transversal diffusion of S in sample 1, a sulfur deficiency in sample 2, and a non distributed excess of S in sample 3. The absorption spectra of the 3 ZnS samples are very similar but the absorption edges shift to smaller energy values for the Mn and Sm doped ZnS samples. Sample 1 presents a PL spectrum with 2 bands at 441 and 537 nm while sample 2 presents a similar spectrum but the bands are 16 and 11 nm blue shifted.

Release of Zn from maternal tissues in pregnant rats deficient in Zn or Zn and Ca

International Nuclear Information System (INIS)

Hurley, L.S.; Masters, D.G.; Lonnerdal, B.; Keen, C.L.

1986-01-01

Earlier studies have shown that diets that increase tissue catabolism reduce the teratogenic effects of Zn deficiency. The hypothesis that Zn may be released from body tissues when the metabolic state is altered was further tested. Nonpregnant Sprague Dawley females were injected with Zn-65; after equilibration, the two major pools of Zn, bone and muscle, had different specific activities (SA), muscle being much higher. Females were mated and fed diets adequate in Zn and Ca (C) or deficient in Zn (ZnD) or deficient in both Zn and Ca (ZnCaD). Calculations using weight loss in ZnD and ZnCaD rats, Zn content of maternal bone and muscle, and total fetal Zn at term indicated that in ZnCaD rats a relatively small amount of Zn from bone early in pregnancy was sufficient to prevent abnormal organogenesis, but most fetal Zn came from breakdown of maternal muscle in the last 3 days of pregnancy. Isotope data supported this conclusion. SA of Zn in ZnD fetuses was equal and high, indicating that most Zn came from the same maternal tissue. High muscle SA prior to mating, and increased SA in tibia and liver during pregnancy suggest that muscle provided Zn for other maternal tissues as well as fetuses. In contrast, SA in C fetuses was less than 30% of that of the D groups, consistent with the earlier hypothesis that most fetal Zn in C rats is accrued directly from the diet

CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina [CEA, LETI, MINATEC Campus, 17 Rue des Martyrs, 38054, Grenoble (France); Levy-Clement, Claude [CNRS, Institut de Chimie et des Materiaux de Paris-Est, 94320, Thiais (France)

2014-09-15

In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl{sub 2} to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl{sub 2} treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

International Nuclear Information System (INIS)

Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina; Levy-Clement, Claude

2014-01-01

In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl 2 to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl 2 treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Theoretical studies on a TeO2/ZnO/diamond-layered structure for zero TCD SAW devices

International Nuclear Information System (INIS)

Dewan, Namrata; Sreenivas, K; Gupta, Vinay

2008-01-01

High-frequency surface acoustic wave (SAW) devices based on diamond substrate are useful because of their very high SAW velocity. In the present work, SAW propagation characteristics, such as phase velocity, coupling coefficient and temperature coefficient of delay (TCD) of a TeO 2 /ZnO/diamond-layered structure, are examined using theoretical calculations. The ZnO/diamond bi-layer structure is found to exhibit a high positive TCD value. A zero TCD device structure is obtained after integration with a TeO 2 over layer having a negative TCD value. Introduction of a non-piezoelectric TeO 2 over layer on the bi-layer structure (ZnO/diamond) increases the coupling coefficient. A relatively low thickness of TeO 2 thin film (∼(1.6–3.1) × 10 −3 λ) is required to achieve temperature-stable SAW devices based on diamond

Fabrication and characterization of ZnO nanowires array electrodes with high photocurrent densities: Effects of the seed layer calcination time

Energy Technology Data Exchange (ETDEWEB)

Lu, Yi-Jing; Liu, Ching-Fang; Hu, Chi-Chang, E-mail: cchu@che.nthu.edu.tw; Kuo, Jen-Hou; Boddula, Rajender

2017-03-01

In this work, we demonstrate that vertically grown ZnO nanowire (NW) arrays of the wurzite phase were successfully fabricated on fluorine doped tin oxide (FTO) substrates via a hydrothermal method. The coating of a seed layer onto the FTO substrates was found to favor the growth of a uniform ZnO NWs array which shows saturation in the photocurrent density with a relatively low potential bias. Furthermore, prolonging the calcination time of the seed layer makes the ZnO NWs behave the better charge separation and improve the photo-electrochemical performance. Under the irradiation at a 75 mW cm{sup −2} from a simulated sunlight source, the ZnO NWs array electrode prepared from the seed layer with calcination at 350 °C for 5 h shows a saturated photocurrent density of 514 μA cm{sup −2} and a maximum half-cell solar-to-hydrogen (HC-STH) efficiency of 0.26% was obtained at 0.6 V versus reversible hydrogen electrode (RHE) in neutral electrolyte. - Highlights: • The seed layer annealing time strongly influences the textural and photo-activity of ZnO NWs. • The average diameter and density of ZnO NWs were controlled to 47–70 nm and 46–70 NWs μm{sup −2}, respectively. • ZnO NWs show promising application potential in solar-electrocatalytic water splitting under potential bias. • The ZnO NWs with SL annealing time = 5 h achieve the highest HC-STH efficiency of 0.26% at 0.6 V.

Nanostructured ‘Anastacia’ flowers for Zn coating by electrodepositing ZnO at room temperature

Energy Technology Data Exchange (ETDEWEB)

Alves, Marta M., E-mail: martamalves@tecnico.ulisboa.pt [ICEMS Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais 1049-001, Lisboa (Portugal); Santos, Catarina F.; Carmezim, Maria J. [ICEMS Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais 1049-001, Lisboa (Portugal); EST Setúbal, DEM, Instituto Politécnico de Setúbal, Campus IPS, 2910 Setúbal (Portugal); Montemor, Maria F. [ICEMS Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais 1049-001, Lisboa (Portugal)

2015-03-30

Graphical abstract: - Highlights: • Functional coating of Zn with ZnO ‘Anastacia’ flowers. • Flowers are composed by nano-hexagonal units of single-crystal wurtzite ZnO. • The growth mechanism of these flowers is discussed. • Room temperature yield cost-effective electrodeposited ZnO ‘Anastacia’ flowers. - Abstract: Functional coatings composed of ZnO, a new flowered structured denominated as ‘Anastacia’ flowers, were successfully obtained through a facile and green one-step electrodeposition approach on Zn substrate. Electrodeposition was performed at constant cathodic potential, in Zn(NO{sub 3}){sub 2} aqueous solution, at pH 6 and at room temperature. The resulting ZnO thin uniform layer, with an average thickness of 300 nm, bearing top 3D hierarchical nanostructures that compose ‘Anastacia’ flowers, was characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman. The results reveal a nano-architecture structure composed by nano-hexagonal units of single-crystal wurtzite ZnO structure with a [0 0 0 1] growth direction along the longitudinal particles axis. Other morphological features, sphere-like, rod-like and random distributed hexagons were also obtained by varying the electrodeposition time as observed by SEM. The Raman spectroscopy revealed the typical peak of ZnO wurtzite for all the obtained morphologies. Coatings wettability was studied and the different morphologies display distinct water contact angles with the ‘Anastacia’ flowers coating showing a wettability of 110°. These results pave the way for simple and low-cost routes for the production of novel functionalized coatings of ZnO over Zn, with potential for biomedical devices.

Nanostructured ‘Anastacia’ flowers for Zn coating by electrodepositing ZnO at room temperature

International Nuclear Information System (INIS)

Alves, Marta M.; Santos, Catarina F.; Carmezim, Maria J.; Montemor, Maria F.

2015-01-01

Graphical abstract: - Highlights: • Functional coating of Zn with ZnO ‘Anastacia’ flowers. • Flowers are composed by nano-hexagonal units of single-crystal wurtzite ZnO. • The growth mechanism of these flowers is discussed. • Room temperature yield cost-effective electrodeposited ZnO ‘Anastacia’ flowers. - Abstract: Functional coatings composed of ZnO, a new flowered structured denominated as ‘Anastacia’ flowers, were successfully obtained through a facile and green one-step electrodeposition approach on Zn substrate. Electrodeposition was performed at constant cathodic potential, in Zn(NO 3 ) 2 aqueous solution, at pH 6 and at room temperature. The resulting ZnO thin uniform layer, with an average thickness of 300 nm, bearing top 3D hierarchical nanostructures that compose ‘Anastacia’ flowers, was characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman. The results reveal a nano-architecture structure composed by nano-hexagonal units of single-crystal wurtzite ZnO structure with a [0 0 0 1] growth direction along the longitudinal particles axis. Other morphological features, sphere-like, rod-like and random distributed hexagons were also obtained by varying the electrodeposition time as observed by SEM. The Raman spectroscopy revealed the typical peak of ZnO wurtzite for all the obtained morphologies. Coatings wettability was studied and the different morphologies display distinct water contact angles with the ‘Anastacia’ flowers coating showing a wettability of 110°. These results pave the way for simple and low-cost routes for the production of novel functionalized coatings of ZnO over Zn, with potential for biomedical devices

Intermixing at the heterointerface between ZnS /Zn(S,O) bilayer buffer and CuInS2 thin film solar cell absorber

Science.gov (United States)

Bär, M.; Ennaoui, A.; Klaer, J.; Kropp, T.; Sáez-Araoz, R.; Lehmann, S.; Grimm, A.; Lauermann, I.; Loreck, Ch.; Sokoll, St.; Schock, H.-W.; Fischer, Ch.-H.; Lux-Steiner, M. C.; Jung, Ch.

2006-09-01

The application of Zn compounds as buffer layers was recently extended to wide-gap CuInS2 (CIS) based thin-film solar cells. Using an alternative chemical deposition route for the buffer preparation aiming at the deposition of a single-layer, nominal ZnS buffer without the need for any toxic reactants such as hydrazine has helped us to achieve a similar efficiency as respective CdS-buffered reference devices. After identifying the deposited Zn compound, as ZnS /Zn(S,O) bilayer buffer in former investigations [M. Bär et al., J. Appl. Phys. 99, 123503 (2006)], this time the focus lies on potential diffusion/intermixing processes at the buffer/absorber interface possibly, clarifying the effect of the heat treatment, which drastically enhances the device performance of respective final solar cells. The interface formation was investigated by x-ray photoelectron and x-ray excited Auger electron spectroscopy. In addition, photoelectron spectroscopy (PES) measurements were also conducted using tunable monochromatized synchrotron radiation in order to gain depth-resolved information. The buffer side of the buffer/absorber heterointerface was investigated by means of the characterization of Zn(S ,O)/ZnS/CIS structures where the ZnS /Zn(S,O) bilayer buffer was deposited successively by different deposition times. In order to make the (in terms of PES information depth) deeply buried absorber side of the buffer/absorber heterointerface accessible for characterization, in these cases the buffer layer was etched away by dilute HClaq. We found indications that while (out-leached) Cu from the absorber layer forms together with the educts in the chemical bath a [Zn(1-Z ),Cu2Z]S-like interlayer between buffer and absorber, Zn is incorporated in the uppermost region of the absorber. Both effects are strongly enhanced by postannealing the Zn(S ,O)/ZnS/CIS samples. However, it was determined that the major fraction of the Cu and Zn can be found quite close to the heterointerface in

Effects of the ZnO layer on the structure and white light emission properties of a ZnS:Mn/GaN nanocomposite system.

Science.gov (United States)

Wang, Cai-Feng; Hu, Bo

2017-10-01

ZnO films were inserted between the ZnS:Mn films and GaN substrates by pulsed laser deposition (PLD). The structure, morphology, and optical properties of the ZnS:Mn/ZnO/GaN nanocomposite systems have been investigated. X-ray diffraction results show that there are three diffraction peaks located at 28.4°, 34.4°, and 34.1°, which correspond to the β-ZnS(111), ZnO(002), and GaN(002) planes, respectively. Due to the insertion of ZnO films, the diffraction peak intensity of ZnS:Mn in ZnS:Mn/ZnO/GaN is stronger than that of ZnS:Mn in ZnS:Mn/GaN, and the full width at half-maximum is smaller. Though the transmittance of ZnS:Mn/ZnO films is slightly lower than that of ZnS:Mn films, the transmittance is still higher than 80%. Compared with ZnS:Mn/GaN, an ultraviolet (UV) emission at 387 nm (originated from the near-band emission of ZnO) and a green light emission at about 520 nm appeared in the photoluminescence (PL) spectra of ZnS:Mn/ZnO/GaN, in addition to the blue emission at 435 nm and the orange-red emission at 580 nm. The emission at 520 nm may be related to the deep-level emission from ZnO and the interface of ZnS:Mn/ZnO. The PL spectrum of ZnS:Mn/ZnO/GaN covers the visible region from the blue light to the red light (400-700 nm), and its color coordinate and color temperature are (0.3103,0.3063) and 6869 K, respectively, presenting strong white light emission.

Structural and optical properties of ZnO rods hydrothermally formed on polyethersulfone substrates

Energy Technology Data Exchange (ETDEWEB)

Shin, Chang Mi; Jang, Jin Tak; Kim, Chang Yong; Ryu, Hyuk Hyun [Inje University, Gimhae (Korea, Republic of); Lee, Won Jae [Dong-Eui University, Busan (Korea, Republic of); Chang, Ji Ho [Korea Maritime University, Busan (Korea, Republic of); Son, Chang Sik [Silla University, Busan (Korea, Republic of); Choi, Hee Lack [Pukyong National University, Busan (Korea, Republic of)

2012-06-15

Various unique ZnO morphologies, such as cigar-like and belt-like structures and microrod and nanorod structures, were formed on flexible polyethersulfone (PES) substrates by using a low temperature hydrothermal route. The structural properties of ZnO depended highly on the precursor concentration. The effect of a thin ZnO seed layer deposited the on PES substrate by using atomic layer deposition on the structural and the optical properties of ZnO hydrothermally grown on the ZnO seed layer/PES substrates was studied. Field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and photoluminescence (PL) measurements were employed to analyze the characteristics of hydrothermally-grown ZnO. The diameter of the ZnO nanorods grown on the ZnO seed layer/PES substrates increased with increasing precursor concentration from 0.025 to 0.125 M due to the Ostwald ripening process. ZnO hydrothermally-grown on the ZnO seed layer/PES substrates at a low precursor concentration showed better structural properties than ZnO formed without a seed layer. Well-formed ZnO nanorods deposited on the ZnO seed layer/PES substrates showed two PL peaks, one in the ultraviolet and the other in the visible region, whereas horizontally positioned ZnO formed on the PES substrate in the absence of a seed layer emitted only one broad PL peak in the violet region. The ZnO grown on PES substrates in this work can be used as high-quality transparent electrodes for solar cells fabricated on flexible substrates.

Structural and optical properties of ZnO rods hydrothermally formed on polyethersulfone substrates

International Nuclear Information System (INIS)

Shin, Chang Mi; Jang, Jin Tak; Kim, Chang Yong; Ryu, Hyuk Hyun; Lee, Won Jae; Chang, Ji Ho; Son, Chang Sik; Choi, Hee Lack

2012-01-01

Various unique ZnO morphologies, such as cigar-like and belt-like structures and microrod and nanorod structures, were formed on flexible polyethersulfone (PES) substrates by using a low temperature hydrothermal route. The structural properties of ZnO depended highly on the precursor concentration. The effect of a thin ZnO seed layer deposited the on PES substrate by using atomic layer deposition on the structural and the optical properties of ZnO hydrothermally grown on the ZnO seed layer/PES substrates was studied. Field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and photoluminescence (PL) measurements were employed to analyze the characteristics of hydrothermally-grown ZnO. The diameter of the ZnO nanorods grown on the ZnO seed layer/PES substrates increased with increasing precursor concentration from 0.025 to 0.125 M due to the Ostwald ripening process. ZnO hydrothermally-grown on the ZnO seed layer/PES substrates at a low precursor concentration showed better structural properties than ZnO formed without a seed layer. Well-formed ZnO nanorods deposited on the ZnO seed layer/PES substrates showed two PL peaks, one in the ultraviolet and the other in the visible region, whereas horizontally positioned ZnO formed on the PES substrate in the absence of a seed layer emitted only one broad PL peak in the violet region. The ZnO grown on PES substrates in this work can be used as high-quality transparent electrodes for solar cells fabricated on flexible substrates.

Low resistivity ZnO-GO electron transport layer based CH3NH3PbI3 solar cells

Directory of Open Access Journals (Sweden)

Muhammad Imran Ahmed

2016-06-01

Full Text Available Perovskite based solar cells have demonstrated impressive performances. Controlled environment synthesis and expensive hole transport material impede their potential commercialization. We report ambient air synthesis of hole transport layer free devices using ZnO-GO as electron selective contacts. Solar cells fabricated with hole transport layer free architecture under ambient air conditions with ZnO as electron selective contact achieved an efficiency of 3.02%. We have demonstrated that by incorporating GO in ZnO matrix, low resistivity electron selective contacts, critical to improve the performance, can be achieved. We could achieve max efficiency of 4.52% with our completed devices for ZnO: GO composite. Impedance spectroscopy confirmed the decrease in series resistance and an increase in recombination resistance with inclusion of GO in ZnO matrix. Effect of temperature on completed devices was investigated by recording impedance spectra at 40 and 60 oC, providing indirect evidence of the performance of solar cells at elevated temperatures.

Luminescence mechanisms of organic/inorganic hybrid organic light-emitting devices fabricated utilizing a Zn2SiO4:Mn color-conversion layer

International Nuclear Information System (INIS)

Choo, D.C.; Ahn, S.D.; Jung, H.S.; Kim, T.W.; Lee, J.Y.; Park, J.H.; Kwon, M.S.

2010-01-01

Zn 2 SiO 4 :Mn phosphor layers used in this study were synthesized by using the sol-gel method and printed on the glass substrates by using a vehicle solution and a heating process. Organic/inorganic hybrid organic light-emitting devices (OLEDs) utilizing a Zn 2 SiO 4 :Mn color-conversion layer were fabricated. X-ray diffraction data for the synthesized Zn 2 SiO 4 :Mn phosphor films showed that the Zn ions in the phosphor were substituted into Mn ions. The electroluminescence (EL) spectrum of the deep blue OLEDs showed that a dominant peak at 461 nm appeared. The photoluminescence spectrum for the Zn 2 SiO 4 :Mn phosphor layer by using a 470 nm excitation source showed that a dominant peak at 527 nm appeared, which originated from the 4 T 1 - 6 A 1 transitions of Mn ions. The appearance of the peak around 527 nm of the EL spectra for the OLEDs fabricated utilizing a Zn 2 SiO 4 :Mn phosphor layer demonstrated that the emitted blue color from the deep blue OLEDs was converted into a green color due to the existence of the color-conversion layer. The luminescence mechanisms of organic/inorganic hybrid OLEDs fabricated utilizing a Zn 2 SiO 4 :Mn color-conversion layer are described on the basis of the EL and PL spectra.

Synthesis of Zn/Co/Fe-layered double hydroxide nanowires with controllable morphology in a water-in-oil microemulsion

Energy Technology Data Exchange (ETDEWEB)

Wu Hongyu; Jiao Qingze [School of Chemical Engineering and Environment, Beijing Institute of Technology, Beijing, 100081 (China); Zhao Yun, E-mail: zhaoyun@bit.edu.cn [School of Chemical Engineering and Environment, Beijing Institute of Technology, Beijing, 100081 (China); Huang Silu; Li Xuefei; Liu Hongbo; Zhou Mingji [School of Chemical Engineering and Environment, Beijing Institute of Technology, Beijing, 100081 (China)

2010-02-15

The Zn/Co/Fe-layered double hydroxide nanowires were synthesized via a reverse microemulsion method by using cetyltrimethyl ammonium bromide (CTAB) /n-hexane/n-hexanol/water as Soft-Template. ZnSO{sub 4}, CoSO{sub 4}, Fe{sub 2}(SO{sub 4}){sub 3} and urea were used as raw materials. The influence of reaction temperature, time, urea concentration and Cn (molar ratio of cetyltrimethyl ammonium bromide to water) on the structure and morphology of Zn/Co/Fe-layered double hydroxides was investigated. The samples were characterized using Transmission Electron Microscopy (TEM), Inductively Coupled Plasma (ICP), X-ray Diffraction (XRD) and Infrared Absorption Spectrum (IR). The results indicate that higher temperature is beneficial to the formation of layered double hydroxides, but particles apart from nanowires could be produced if temperature is up to 120 deg. C. By varying the temperature, reaction time, urea concentration and Cn, we got the optimum conditions of synthesizing uniform Zn/Co/Fe-layered double hydroxide nanowires: 100 deg. C, more than 12 h, Cn: 30-33, urea concentration: 0.3 M.

The role of ion exchange in the passivation of In(Zn)P nanocrystals with ZnS

Science.gov (United States)

Cho, Deok-Yong; Xi, Lifei; Boothroyd, Chris; Kardynal, Beata; Lam, Yeng Ming

2016-03-01

We have investigated the chemical state of In(Zn)P/ZnS core/shell nanocrystals (NCs) for color conversion applications using hard X-ray absorption spectroscopy (XAS) and photoluminescence excitation (PLE). Analyses of the edge energies as well as the X-ray absorption fine structure (XAFS) reveal that the Zn2+ ions from ZnS remain in the shell while the S2- ions penetrate into the core at an early stage of the ZnS deposition. It is further demonstrated that for short growth times, the ZnS shell coverage on the core was incomplete, whereas the coverage improved gradually as the shell deposition time increased. Together with evidence from PLE spectra, where there is a strong indication of the presence of P vacancies, this suggests that the core-shell interface in the In(Zn)P/ZnS NCs are subject to substantial atomic exchanges and detailed models for the shell structure beyond simple layer coverage are needed. This substantial atomic exchange is very likely to be the reason for the improved photoluminescence behavior of the core-shell particles compare to In(Zn)P-only NCs as S can passivate the NCs surfaces.

2D double-layer-tube-shaped structure Bi2S3/ZnS heterojunction with enhanced photocatalytic activities

International Nuclear Information System (INIS)

Gao, Xiaoming; Wang, Zihang; Fu, Feng; Li, Xiang; Li, Wenhong

2015-01-01

Bi 2 S 3 /ZnS heterojunction with 2D double-layer-tube-shaped structures was prepared by the facile synthesis method. The corresponding relationship was obtained among loaded content to phase, morphology, and optical absorption property of Bi 2 S 3 /ZnS composite. The results shown that Bi 2 S 3 loaded could evidently change the crystallinity of ZnS, enhance the optical absorption ability for visible light of ZnS, and improve the morphologies and microstructure of ZnS. The photocatalytic activities of the Bi 2 S 3 /ZnS sample were evaluated for the photodegradation of phenol and desulfurization of thiophene under visible light irradiation. The results showed that Bi 2 S 3 loaded greatly improved the photocatalytic activity of ZnS, and the content of loaded Bi 2 S 3 had an impact on the catalytic activity of ZnS. Moreover, the mechanism of enhanced photocatalytic activity was also investigated by analysis of relative band positions of Bi 2 S 3 and ZnS, and photo-generated hole was main active radicals during photocatalytic oxidation process

2D double-layer-tube-shaped structure Bi2S3/ZnS heterojunction with enhanced photocatalytic activities

Science.gov (United States)

Gao, Xiaoming; Wang, Zihang; Fu, Feng; Li, Xiang; Li, Wenhong

2015-10-01

Bi2S3/ZnS heterojunction with 2D double-layer-tube-shaped structures was prepared by the facile synthesis method. The corresponding relationship was obtained among loaded content to phase, morphology, and optical absorption property of Bi2S3/ZnS composite. The results shown that Bi2S3 loaded could evidently change the crystallinity of ZnS, enhance the optical absorption ability for visible light of ZnS, and improve the morphologies and microstructure of ZnS. The photocatalytic activities of the Bi2S3/ZnS sample were evaluated for the photodegradation of phenol and desulfurization of thiophene under visible light irradiation. The results showed that Bi2S3 loaded greatly improved the photocatalytic activity of ZnS, and the content of loaded Bi2S3 had an impact on the catalytic activity of ZnS. Moreover, the mechanism of enhanced photocatalytic activity was also investigated by analysis of relative band positions of Bi2S3 and ZnS, and photo-generated hole was main active radicals during photocatalytic oxidation process.

Functional Regulation of the Plasma Protein Histidine-Rich Glycoprotein by Zn2+ in Settings of Tissue Injury

Directory of Open Access Journals (Sweden)

Kristin M. Priebatsch

2017-03-01

Full Text Available Divalent metal ions are essential nutrients for all living organisms and are commonly protein-bound where they perform important roles in protein structure and function. This regulatory control from metals is observed in the relatively abundant plasma protein histidine-rich glycoprotein (HRG, which displays preferential binding to the second most abundant transition element in human systems, Zinc (Zn2+. HRG has been proposed to interact with a large number of protein ligands and has been implicated in the regulation of various physiological and pathological processes including the formation of immune complexes, apoptotic/necrotic and pathogen clearance, cell adhesion, antimicrobial activity, angiogenesis, coagulation and fibrinolysis. Interestingly, these processes are often associated with sites of tissue injury or tumour growth, where the concentration and distribution of Zn2+ is known to vary. Changes in Zn2+ levels have been shown to modify HRG function by altering its affinity for certain ligands and/or providing protection against proteolytic disassembly by serine proteases. This review focuses on the molecular interplay between HRG and Zn2+, and how Zn2+ binding modifies HRG-ligand interactions to regulate function in different settings of tissue injury.

Structural, vibrational and morphological properties of layered double hydroxides containing Ni2+, Zn2+, Al3+ and Zr4+ cations

International Nuclear Information System (INIS)

Bezerra, Débora M.; Rodrigues, João E.F.S.; Assaf, Elisabete M.

2017-01-01

Layered double hydroxides are anionic clays with formula [M II 1−x M III x (OH) 2 ] q+ [A n− ] q/n ·mH 2 O, finding possible uses as catalyst support, adsorbents and so on. In this paper, we address the phase formation of layered double hydroxides containing Ni 2+ , Zn 2+ , Al 3+ and Zr 4+ cations, namely, NiZn-Al, NiZn-AlZr and NiZn-Zr compositions obtained by the coprecipitation method. Such systems were characterized by X-ray diffraction, confirming the phase formation for NiZn-Al and NiZn-AlZr samples. Infrared and Raman spectroscopies elucidated the anion and water molecules occurrence in the interlayer. Nitrogen physisorption (BET method) determined the presence of pores and specific surface area. The isotherm shapes were Type IV, according to the IUPAC, and represent a mesoporous structure. A morphological study was performed by means of scanning and transmission electron microscopies, and particle size values of 120, 131 and 235 nm for NiZn-Al, NiZn-AlZr and NiZn-Zr, respectively, were determined. Thermogravimetric analysis of the decomposition of the systems revealed that their complete disintegration occurred at ~ 450 °C and resulted in mixed oxides.

Improving gas sensor properties of encapsulated ZnO nanorods for ethanol detection using ZnO:Cr layer as an encapsulated layer

Directory of Open Access Journals (Sweden)

S. Safa

2017-11-01

Full Text Available In this study, encapsulated ZnO nanorods with different amount of chromium (Cr dopant (0-4.5 at.% were prepared with hydrothermal method, and their sensitivities as gas sensors against ethanol vapor were investigated. Morphologies of samples were explored by field emission scanning electron microscope (FESEM which showed that encapsulation process increased the diameter of ZnO nanorods. Existence of Cr in ZnO nanorods structures was confirmed by Energy-dispersive X-ray spectroscopy (EDX. Based on X-ray diffraction (XRD analysis, the ZnO:Cr nanorods had wurtzite crystal structure, and adding Cr did not alter the crystal structure of ZnO. Electrical measurements revealed that current levels of samples were decreased by adding Cr, while the current level of the sample with 4.5 at.% was increased. This reduction could be attributed to the presence of Cr3+ ions, which led to decrease of charge carriers. Besides, due to the catalytic properties of Cr and its lower ionization energy than Zn, it was observed that Cr dopant improved the detection sensitivity of samples, and decreased the optimum operating temperature of samples. Among all samples, the most sensitivity (14 was obtained based on the sample with 1.5 at.% of Cr for 500 ppm ethanol vapor at the optimum temperature (250 . In fact, by encapsulating the samples, they became rougher, so the appropriate places to absorb and decompose of gas molecules are increased.

UV-blocking properties of Zn/ZnO coatings on wood deposited by cold plasma spraying at atmospheric pressure

Science.gov (United States)

Wallenhorst, L.; Gurău, L.; Gellerich, A.; Militz, H.; Ohms, G.; Viöl, W.

2018-03-01

In this study, artificial ageing of beech wood coated with Zn/ZnO particles by means of a cold plasma spraying process as well as coating systems including a Zn/ZnO layer and additional conventional sealings were examined. As ascertained by colour measurements, the particle coatings significantly decreased UV light-induced discolouration. Even though no significant colour changes were observed for particle-coated and alkyd-sealed samples, ATR-FTIR measurements revealed photocatalytic degradation of the alkyd matrix. In contrast, the polyurethane sealing appeared to be stabilised by the Zn/ZnO coating. Furthermore, morphologic properties of the pure particle coatings were studied by SEM and roughness measurements. SEM measurements confirmed a melting and solidifying process during deposition.

Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications

International Nuclear Information System (INIS)

Gieraltowska, S.; Wachnicki, L.; Witkowski, B.S.; Godlewski, M.; Guziewicz, E.

2012-01-01

In this paper, we report on transparent transistor obtained using laminar structure of two high-k dielectric oxides (hafnium dioxide, HfO 2 and aluminum oxide, Al 2 O 3 ) and zinc oxide (ZnO) layer grown at low temperature (60 °C–100 °C) using Atomic Layer Deposition (ALD) technology. Our research was focused on the optimization of technological parameters for composite layers Al 2 O 3 /HfO 2 /Al 2 O 3 for thin film transistor structures with ZnO as a channel and a gate layer. We elaborate on the ALD growth of these oxides, finding that the 100 nm thick layers of HfO 2 and Al 2 O 3 exhibit fine surface flatness and required amorphous microstructure. Growth parameters are optimized for the monolayer growth mode and maximum smoothness required for gating.

ZnS nanostructured thin-films deposited by successive ionic layer adsorption and reaction

Science.gov (United States)

Deshmukh, S. G.; Jariwala, Akshay; Agarwal, Anubha; Patel, Chetna; Panchal, A. K.; Kheraj, Vipul

2016-04-01

ZnS thin films were grown on glass substrate using successive ionic layer adsorption and reaction (SILAR) technique at room temperature. Aqueous solutions of ZnCl2 and Na2S were used as precursors. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectroscopy and optical absorption measurements were applied to study the structural, surface morphology and optical properties of as-deposited ZnS thin films. The X-ray diffraction profiles revealed that ZnS thin films consist of crystalline grains with cubic phase. Spherical nano grains of random size and well covered on the glass substrate were observed from FESEM. The average grain size were found to be 77 nm, 100 nm and 124 nm for 20 cycles, 40 cycles and 60 cycles samples respectively. For 60 cycle sample, Raman spectra show two prominent peaks at 554 cm-1 and 1094 cm-1. The optical band gap values were found to be 3.76 eV, 3.72 eV and 3.67 eV for 20 cycle, 40 cycle and 60 cycle samples respectively.

Zr-based conversion layer on Zn-Al-Mg alloy coated steel sheets: insights into the formation mechanism

International Nuclear Information System (INIS)

Lostak, Thomas; Maljusch, Artjom; Klink, Björn; Krebs, Stefan; Kimpel, Matthias; Flock, Jörg; Schulz, Stephan; Schuhmann, Wolfgang

2014-01-01

Zr-based conversion layers are considered as environmentally friendly alternatives replacing trication phosphatation in the automotive industry. Based on excellent electronic barrier properties they provide an effective corrosion protection of the metallic substrate. In this work, thin protective layers were grown on novel Zn-Al-Mg alloy coated steel sheets by increasing the local pH-value at the sample surface leading to deposition of a Zr-based conversion layer. For this purpose Zn-Al-Mg alloy (ZM) coated steel sheets were treated in an aqueous model conversion solution containing well-defined amounts of hexafluorozirconic acid (H 2 ZrF 6 ) and characterized after different immersion times with SKPFM and field emission SEM (FE-SEM)/EDX techniques. A deposition mechanism of Zr-based conversion coatings on microstructural heterogeneous Zn-Al-Mg alloy surfaces was proposed

InP/ZnSe/ZnS core-multishell quantum dots for improved luminescence efficiency

Science.gov (United States)

Greco, Tonino; Ippen, Christian; Wedel, Armin

2012-04-01

Semiconductor quantum dots (QDs) exhibit unique optical properties like size-tunable emission color, narrow emission peak, and high luminescence efficiency. QDs are therefore investigated towards their application in light-emitting devices (QLEDs), solar cells, and for bio-imaging purposes. In most cases QDs made from cadmium compounds like CdS, CdSe or CdTe are studied because of their facile and reliable synthesis. However, due to the toxicity of Cd compounds and the corresponding regulation (e.g. RoHS directive in Europe) these materials are not feasible for customer applications. Indium phosphide is considered to be the most promising alternative because of the similar band gap (InP 1.35 eV, CdSe 1.73 eV). InP QDs do not yet reach the quality of CdSe QDs, especially in terms of photoluminescence quantum yield and peak width. Typically, QDs are coated with another semiconductor material of wider band gap, often ZnS, to passivate surface defects and thus improve luminescence efficiency. Concerning CdSe QDs, multishell coatings like CdSe/CdS/ZnS or CdSe/ZnSe/ZnS have been shown to be advantageous due to the improved compatibility of lattice constants. Here we present a method to improve the luminescence efficiency of InP QDs by coating a ZnSe/ZnS multishell instead of a ZnS single shell. ZnSe exhibits an intermediate lattice constant of 5.67 Å between those of InP (5.87 Å) and ZnS (5.41 Å) and thus acts as a wetting layer. As a result, InP/ZnSe/ZnS is introduced as a new core-shell quantum dot material which shows improved photoluminescence quantum yield (up to 75 %) compared to the conventional InP/ZnS system.

Effect of the substrate surface topology and temperature on the structural properties of ZnO layers obtained by plasma enhanced chemical vapour deposition

Energy Technology Data Exchange (ETDEWEB)

Kitova, S; Danev, G, E-mail: skitova@clf.bas.b [Acad. J .Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl.109, 1113 Sofia (Bulgaria)

2010-04-01

In this work thin ZnO layers were grown by metal-organic PECVD (RF 13.56 MHz) on Si wafers. Zn acetylacetonate was used as a precursor and oxygen as oxidant. A system for dosed injection of the precursor and oxidant into the plasma reactor was developed. The influence of the substrate surface topology and temperature on the structural properties of the deposited layers was studied. ZnO and graphite powder dispersions were used to modify the silicon wafers before starting the deposition process of the layers. Some of the ZnO layers were deposited on the back, unpolished, side of Si wafers. Depositions at 400 {sup 0}C were performed to examine the effect of the substrate temperatures on the layer growth. The film structure was examined by XRD and SEM. The results show that all layers are crystalline with hexagonal wurtzite structure. The crystallites are preferentially oriented along the c-axis direction perpendicular to the substrate surfaces. ZnO layers deposited on thin ZnO seed films and clean Si surface exhibit well-developed grain structures and more c-axis preferred phase with better crystal quality than that of the layers deposited on graphite seed layer or rough, unpolished Si wafer.

Formation of a ZnS/Zn(S,O) bilayer buffer on CuInS2 thin film solar cell absorbers by chemical bath deposition

Science.gov (United States)

Bär, M.; Ennaoui, A.; Klaer, J.; Kropp, T.; Sáez-Araoz, R.; Allsop, N.; Lauermann, I.; Schock, H.-W.; Lux-Steiner, M. C.

2006-06-01

The application of Zn compounds as buffer layers was recently extended to wide-gap CuInS2 (CIS) based thin film solar cells. Using an alternative chemical deposition route for the buffer preparation aiming at the deposition of a single-layer, nominal ZnS buffer without the need for any toxic reactants such as hydrazine has helped us to achieve a similar efficiency as respective CdS-buffered reference devices. In order to shed light on the differences of other Zn-compound buffers deposited in conventional chemical baths [chemical bath deposition (CBD)] compared to the buffer layers deposited by this alternative CBD process, the composition of the deposited buffers was investigated by x-ray excited Auger electron and x-ray photoelectron spectroscopy to potentially clarify their superiority in terms of device performance. We have found that in the early stages of this alternative CBD process a thin ZnS layer is formed on the CIS, whereas in the second half of the CBD the growth rate is greatly increased and Zn(S,O) with a ZnS/(ZnS+ZnO) ratio of ~80% is deposited. Thus, a ZnS/Zn(S,O) bilayer buffer is deposited on the CIS thin film solar cell absorbers by the alternative chemical deposition route used in this investigation. No major changes of these findings after a postannealing of the buffer/CIS sample series and recharacterization could be identified.

Comprehensive study of growth mechanism and properties of low Zn content Cd_1_-_xZn_xS thin films by chemical bath

International Nuclear Information System (INIS)

Rodriguez, Carlos Anibal; Sandoval-Paz, Myrna Guadalupe; Saavedra, Renato; De la Carrera, Francisco; Trejo-Cruz, Cuauhthemoc; Aragon, Luis E.; Sirena, Martin; Delplancke, Marie-Paule; Carrasco, Claudia

2016-01-01

Cd_1_-_xZn_xS thin films have been studied extensively as window layers for solar cell applications. However, a mismatch between the Cd_1_-_xZn_xS and copper-indium-gallium-selenide absorber layers increases with Zn film concentration, which reduces the device efficiency. In this work, Cd_1_-_xZn_xS thin films with low Zn concentrations were analyzed. The effect of the addition of different molar Zn concentrations to the reaction mixture on the growth mechanism of Cd_1_-_xZn_xS thin films and the influence of these mechanisms on structural, optical and morphological properties of the films has been studied. Cd_1_-_xZn_xS thin films were synthesized by chemical bath deposition using an ammonia-free alkaline solution. Microstructural analysis by X-ray diffraction showed that all deposited films grew with hexagonal structure and crystallite sizes decreased as the Zn concentration in the film increased. Optical measurements indicated a high optical transmission between 75% and 90% for wavelengths above the absorption edge. Band gap value increased from 2.48 eV to 2.62 eV, and the refractive index values for Cd_1_-_xZn_xS thin films decreased as the Zn increased. These changes in films and properties are related to a modification in growth mechanism of the Cd_1_-_xZn_xS thin films, with the influence of Zn(OH)_2 formation being more important as Zn in solution increases. (author)

ZnO/SnO{sub 2} nanoflower based ZnO template synthesized by thermal chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Sin, N. D. Md., E-mail: diyana0366@johor.uitm.edu.my; Amalina, M. N., E-mail: amalina0942@johor.uitm.edu.my [NANO-ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Fakulti Kejuruteraan Elektrik, Universiti Teknologi MARA Cawangan Johor, Kampus Pasir Gudang, 81750 Masai, Johor (Malaysia); Ismail, Ahmad Syakirin, E-mail: kyrin-samaxi@yahoo.com; Shafura, A. K., E-mail: shafura@ymail.com; Ahmad, Samsiah, E-mail: samsiah.ahmad@johor.uitm.edu.my; Mamat, M. H., E-mail: mhmamat@salam.uitm.edu.my [NANO-ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Rusop, M., E-mail: rusop@salam.uitm.edu.my [NANO-ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia)

2016-07-06

The ZnO/SnO{sub 2} nanoflower like structures was grown on a glass substrate deposited with seed layer using thermal chemical vapor deposition (CVD) with combining two source materials. The ZnO/SnO{sub 2} nanoflower like structures had diameter in the range 70 to 100 nm. The atomic percentage of ZnO nanoparticle , SnO{sub 2} nanorods and ZnO/SnO{sub 2} nanoflower was taken using EDS. Based on the FESEM observations, the growth mechanism is applied to describe the growth for the synthesized nanostructures.

Atomic absorption photometry of excess Zn in ZnO

Energy Technology Data Exchange (ETDEWEB)

Lott, K.; Shinkarenko, S.; Tuern, L. [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Kirsanova, T.; Grebennik, A.; Vishnjakov, A. [Department of Physical Chemistry, D. Mendelejev University of Chemical Technology of Russia, Miusskaya Sq. 9, 125047 Moscow (Russian Federation)

2005-02-01

Zn excess in ZnO is built up automatically at high temperatures. Excess Zn in hydrothermally grown ZnO single crystals were investigated by the atomic absorption photometry (AAP) method. To determine the excess zinc in ZnO samples, the AAP of zinc vapour was used in the conditions of solid-vapour equilibrium. Zn AAP allowed to eliminate excess Zn connected differentially in ZnO samples. To fix Zn non-stoichiometry, all the ZnO samples tested were previously heat treated at temperature interval from 850 to 900 C and at fixed Zn vapour pressures from 0.1 to 0.9 of saturated zinc vapour pressure at given treatment temperature. The analysis of temperature dependence of zinc vapour pressure indicated that the impurity metals take active role in the determination of non-stoichiometric zinc. The impurities Mn, Fe, Co, Ni and Cu form oxides which will reduce during annealing in Zn vapor up to metals form. During AAP measurement in optical cuvette, these metals react with ZnO and give additional Zn vapor pressure. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Interpretation of transport measurements in ZnO-thin films

Energy Technology Data Exchange (ETDEWEB)

Petukhov, Vladimir; Stoemenos, John; Rothman, Johan; Bakin, Andrey; Waag, Andreas [Technical University of Braunschweig, Institute of High Frequency Technology, Braunschweig (Germany)

2011-01-15

In order to interpret results of temperature dependent Hall measurements in heteroepitaxial ZnO-thin films, we adopted a multilayer conductivity model considering carrier-transport through the interfacial layer with degenerate electron gas as well as the upper part of ZnO layers with lower conductivity. This model was applied to the temperature dependence of the carrier concentration and mobility measured by Hall effect in a ZnO-layer grown on c-sapphire with conventional high-temperature MgO and low-temperature ZnO buffer. We also compared our results with the results of maximum entropy mobility-spectrum analysis (MEMSA). The formation of the highly conductive interfacial layer was explained by analysis of transmission electron microscopy (TEM) images taken from similar layers. (orig.)

Interpretation of transport measurements in ZnO-thin films

Science.gov (United States)

Petukhov, Vladimir; Stoemenos, John; Rothman, Johan; Bakin, Andrey; Waag, Andreas

2011-01-01

In order to interpret results of temperature dependent Hall measurements in heteroepitaxial ZnO-thin films, we adopted a multilayer conductivity model considering carrier-transport through the interfacial layer with degenerate electron gas as well as the upper part of ZnO layers with lower conductivity. This model was applied to the temperature dependence of the carrier concentration and mobility measured by Hall effect in a ZnO-layer grown on c-sapphire with conventional high-temperature MgO and low-temperature ZnO buffer. We also compared our results with the results of maximum entropy mobility-spectrum analysis (MEMSA). The formation of the highly conductive interfacial layer was explained by analysis of transmission electron microscopy (TEM) images taken from similar layers.

Deposition of polycrystalline Cd{sub 1-x}Zn{sub x} Te films on ZnTe/graphite and graphite substrates by close-spaced sublimation

Energy Technology Data Exchange (ETDEWEB)

Okamoto, Tamotsu; Akiba, Sho; Takahashi, Kohei; Nagatsuka, Satsuki; Kanda, Yohei [Department of Electrical and Electronic Engineering, Kisarazu National College of Technology, 2-11-1 Kiyomidai-higashi, Kisarazu, Chiba 292-0041 (Japan); Tokuda, Satoshi; Kishihara, Hiroyuki; Sato, Toshiyuki [Technology Research Laboratory, Shimadzu Corporation, 3-9-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237 (Japan)

2014-07-15

The effects of a ZnTe layer on the deposition of a Cd{sub 1-x}Zn{sub x}Te (CZT) layer in the initial stage of the close-spaced sublimation (CSS) deposition were investigated. The deposition rate was almost constant in the initial stage of the CdTe deposition on the ZnTe/graphite substrates. However, the deposition rate within 1 minute was lower than that after 1 minute in the CdTe deposition on graphite substrates. This result suggests that nucleation of CdTe directly deposited on graphite substrate is difficult when compared to that with a ZnTe layer. Furthermore, the effects of CdCl{sub 2} and ZnTe additions to the CdTe sources in the CSS deposition were also investigated. Both the grain size and the intensity of donor-acceptor pair (DAP) emission in photoluminescence (PL) spectra were decreased by the effect of CdCl{sub 2} addition. Zn content in CZT films was controlled by the ZnTe ratio in the CdTe/ZnTe powder sources. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Variable dimensionality and framework found in a series of quaternary zinc selenites, A2Zn3(SeO3)4·xH2O (A = Na, Rb, and Cs; 0≤x≤1) and Cs2Zn2(SeO3)3·2H2O

Science.gov (United States)

Lü, Minfeng; Jo, Hongil; Oh, Seung-Jin; Ok, Kang Min

2017-01-01

Five new alkali metal zinc selenites, A2Zn3(SeO3)4·xH2O (A = Na, Rb, and Cs; 0≤x≤1) and Cs2Zn2(SeO3)3·2H2O have been synthesized by heating a mixture of ZnO, SeO2 and A2CO3 (A = Na, Rb, and Cs), and characterized by X-ray diffraction (XRD) and spectroscopic analyses techniques. All of the reported materials revealed a rich structural chemistry with different frameworks and connection modes of Zn2+. While Rb2Zn3(SeO3)4 and Cs2Zn3(SeO3)4·H2O revealed three-dimensional frameworks consisting of isolated ZnO4 tetrahedra and SeO3 polyhedra, Na2Zn3(SeO3)4, Cs2Zn3(SeO3)4, and Cs2Zn2(SeO3)3·2H2O contained two-dimensional [Zn3(SeO3)4]2- layers. Specifically, whereas isolated ZnO4 tetrahedra and SeO3 polyhedra are arranged into two-dimensional [Zn3(SeO3)4]2- layers in two cesium compounds, circular [Zn3O10]14- chains and SeO3 linkers are formed in two-dimensional [Zn3(SeO3)4]2- layers in Na2Zn3(SeO3)4. Close structural examinations suggest that the size of alkali metal is significant in determining the framework geometry as well as connection modes of transition metal cations.

The ZnO p-n homojunctions modulated by ZnMgO barriers

International Nuclear Information System (INIS)

Yang, Jing-Jing; Fang, Qing-Qing; Wang, Dan-Dan; Du, Wen-Han

2015-01-01

In this paper, we fabricated the ultrathin ZnO p-n homojunctions, which modulated by ZnMgO asymmetrical double barriers (ADB). The ADB p-n homojunctions displays step-like curve in the absorption spectrums, this is the first time that quantum confinement effect has been observed in the absorption spectrums at room temperature (RT). The Hall-effect data confirm there is 2-dimensional electron gas in the interface of the ZnMgO ADB p-n junctions. The quantum confinement effect enhances the hall-mobility μ to 10 3 cm 2 V −1 s −1 based on the polarity of the films. There was no rectification property in the ZnO homojunctions with thickness of 250nm, however, when the ADB was added in the n-type layer of the homojunctions, it displays a typical Zener diode rectification property in the I-V curve

Synthesis in fluoride medium and characterisation of Montmorillonite type Photoelasticity. Structural study by X-ray Absorption and nuclear magnetic resonance spectroscopies; Synthese en milieu fluore et caracterisation de phyllosilicates de type montmorillonite. etude structurale par spectroscopies d'absorption des rayons x et de resonance magnetique nucleaire

Energy Technology Data Exchange (ETDEWEB)

Reinholdt, M.

2001-12-15

The aim of this work is to synthesize and characterise montmorillonite type phyllosilicates and to study the distribution of the metal elements in the structure. First, generalities about phyllosilicates are introduced. A particular attention is given to (2:1) di-octahedral phyllosilicates and especially to montmorillonite. The different methods of the synthesis of this mineral are reviewed. The method of hydrothermal synthesis in fluoride medium and the techniques used to characterize the materials (XRD, TGA-DTA, chemical analyses) are then described. The descriptions of solid state NMR and EXAFS are particularly developed. Next, a systematic study of the synthetic products is realised for two systems MO-Al{sub 2}O{sub 3}-SiO{sub 2} (M = Mg or Zn). The compositions of hydrogel are based on a theoretical formula of montmorillonite: Na{sub 2x}[Al{sub 2(1-x)}M{sub 2x}-vacancy]Si{sub 4}O{sub 10}OH{sub 2} (x represents the octahedral layer charge). A montmorillonite type phyllosilicate is obtained for 0.10 {<=} x {<=} 0.25 in the MgO-Al{sub 2}O{sub 3}-SiO{sub 2} system and for x = 0.10 in the ZnO-Al{sub 2}O{sub 3}-SiO{sub 2} system. Besides the Mg/Al substitutions in the octahedral sheet, Al/Si substitutions in the tetrahedral sheet are observed by {sup 29}Si and {sup 27}Al NMR. The {sup 19}F NMR shows a clustering of the octahedral elements in (Mg)phyllosilicate. Then, the parameters of the synthesis of (Mg)phyllosilicate are introduced. Kaolinite is observed as an intermediary phase during the crystallisation. The optimal pH is found between 5.0 and 5.5. The presence of a little amount of F- is necessary (0.05 {<=} F/SiO{sub 2} {<=} 0.10). Tetrahedral substitutions are fewer with the use of Na{sup +} as compensating cation. Finally, Zn and Mg K-edges EXAFS show a distortion of the layer and a clustering of the octahedral elements for the (Zn)phyllosilicate. A quantitative {sup 27}Al MAS-NMR method is elaborated which allows to determine both total amount of aluminium

Tailoring of the electronic properties of ZnO-polyacrylonitrile nanofibers: Experiment and theory

Energy Technology Data Exchange (ETDEWEB)

Iatsunskyi, Igor, E-mail: igoyat@amu.edu.pl [NanoBioMedical Centre, Adam Mickiewicz University in Poznan, Umultowska 85, 61-614, Poznan (Poland); Vasylenko, Andrij, E-mail: A.Vasylenko@warwick.ac.uk [Department of Physics, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL (United Kingdom); Institute for Condensed Matter Physics NAS Ukraine, 1 Sventsitskogo str. 79011 Lviv (Ukraine); Viter, Roman, E-mail: roman.viter@lu.lv [Institute of Atomic Physics and Spectroscopy, University of Latvia, 19 Raina Blvd., LV 1586, Riga (Latvia); Kempiński, Mateusz; Nowaczyk, Grzegosz [NanoBioMedical Centre, Adam Mickiewicz University in Poznan, Umultowska 85, 61-614, Poznan (Poland); Jurga, Stefan [NanoBioMedical Centre, Adam Mickiewicz University in Poznan, Umultowska 85, 61-614, Poznan (Poland); Department of Macromolecular Physics, Adam Mickiewicz University, Umultowska, 85, 61-614 Poznan (Poland); Bechelany, Mikhael, E-mail: mikhael.bechelany@univ-montp2.fr [European Institute of Membranes (IEM, ENSCM-UM-CNRS, UMR 5635), University of Montpellier, Place Eugène Bataillon, F-34095, Montpellier (France)

2017-07-31

Highlights: • ZnO-polyacrylonitrile (ZnO-PAN) nanofibers were obtained by electrospinning method and atomic layer deposition. • Relation between structural and electronic properties of ZnO-PAN nanofibers were established. • DFT for calculation of ZnO work function was performed. - Abstract: We report the study of ZnO-polyacrylonitrile (ZnO-PAN) nanofibers fabricated by the combination of electrospinning and atomic layer deposition. The latter technique enables us to control the size of the surface of ZnO 1D nanostructures and hence its effectiveness for energy and biosensor applications. We observe the tendency of ZnO to form nanograins with increase of the layer thickness, and investigate the influence of the grain size on the electronic properties of the nanofibers. It is demonstrated that the ZnO work function (Φ) is strongly affected by surface band bending in the ZnO layer. The observed change of Φ in ZnO layers results from the curvature of the grain surface as well as the presence of the hydroxyl and oxygen groups, adsorbed on ZnO surface and is in a good agreement with theoretical prediction.

Tunable resistive switching behaviour in ferroelectric–ZnO bilayer films

International Nuclear Information System (INIS)

Zhou Mingxiu; Li Ziwei; Chen Bo; Wan Jianguo; Liu Junming

2013-01-01

Pb(Zr 0.52 Ti 0.48 )O 3 /ZnO bilayer films with various ZnO-layer thicknesses were prepared by a sol–gel process, and their phase structures, electric conduction and polarization behaviour were measured. The results showed that the preferential crystal orientation of the ZnO layer changed with a change in its thickness. The strong dependence of both asymmetric current–voltage and polarization–voltage characteristics on the ZnO-layer thickness was observed. The resistance ratio of the high-resistance state (HRS) to the low-resistance state (LRS) increased with increasing ZnO-layer thickness, and a high rectification ratio was obtained in the bilayer film with an optimized ZnO-layer thickness. The combined effects of interface polarization coupling and energy band structure on the resistive switching behaviour of the bilayer films were revealed, and the electric conduction mechanisms of the bilayer films at both HRS and LRS were analysed in detail. This work presents an effective method to modulate the resistive switching behaviour of ferroelectric–ZnO heterostructures, which is significant in designing high-performance ferroelectric–semiconductor heterostructures for actual applications. (paper)

Characteristics of one-port surface acoustic wave resonator fabricated on ZnO/6H-SiC layered structure

Science.gov (United States)

Li, Qi; Qian, Lirong; Fu, Sulei; Song, Cheng; Zeng, Fei; Pan, Feng

2018-04-01

Characteristics of one-port surface acoustic wave (SAW) resonators fabricated on ZnO/6H-SiC layered structure were investigated experimentally and theoretically. Phase velocities (V p), electromechanical coupling coefficients (K 2), quality factors (Q), and temperature coefficients of frequency (TCF) of Rayleigh wave (0th mode) and first- and second-order Sezawa wave (1st and 2nd modes, respectively) for different piezoelectric film thickness-to-wavelength (h ZnO /λ) ratios were systematically studied. Results demonstrated that one-port SAW resonators fabricated on the ZnO/6H-SiC layered structure were promising for high-frequency SAW applications with moderate K 2 and TCF values. A high K 2 of 2.44% associated with a V p of 5182 m s‑1 and a TCF of  ‑41.8 ppm/°C was achieved at h ZnO /λ  =  0.41 in the 1st mode, while a large V p of 7210 m s‑1 with a K 2 of 0.19% and a TCF of  ‑36.4 ppm/°C was obtained for h ZnO /λ  =  0.31 in the 2nd mode. Besides, most of the parameters were reported for the first time and will be helpful for the future design and optimization of SAW devices fabricated on ZnO/6H-SiC layered structures.

Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell

Science.gov (United States)

Mangasa Simanjuntak, Firman; Singh, Pragya; Chandrasekaran, Sridhar; Juanda Lumbantoruan, Franky; Yang, Chih-Chieh; Huang, Chu-Jie; Lin, Chun-Chieh; Tseng, Tseung-Yuen

2017-12-01

An engineering nanorod array in a ZnO-based electrochemical metallization device for nonvolatile memory applications was investigated. A hydrothermally synthesized nanorod layer was inserted into a Cu/ZnO/ITO device structure. Another device was fabricated without nanorods for comparison, and this device demonstrated a diode-like behavior with no switching behavior at a low current compliance (CC). The switching became clear only when the CC was increased to 75 mA. The insertion of a nanorods layer induced switching characteristics at a low operation current and improve the endurance and retention performances. The morphology of the nanorods may control the switching characteristics. A forming-free electrochemical metallization memory device having long switching cycles (>104 cycles) with a sufficient memory window (103 times) for data storage application, good switching stability and sufficient retention was successfully fabricated by adjusting the morphology and defect concentration of the inserted nanorod layer. The nanorod layer not only contributed to inducing resistive switching characteristics but also acted as both a switching layer and a cation diffusion control layer.

ZnSe thin films by chemical bath deposition method

Energy Technology Data Exchange (ETDEWEB)

Lokhande, C.D.; Patil, P.S.; Tributsch, H. [Hahn-Meitner-Institute, Bereich Physikalische Chemie, Abt. CS, Glienicker Strasse-100, D-14109 Berlin (Germany); Ennaoui, A. [Hahn-Meitner-Institute, Bereich Physikalische Chemie, Abt. CG, Glienicker Strasse-100, D-14109 Berlin (Germany)

1998-09-04

The ZnSe thin films have been deposited onto glass substrates by the simple chemical bath deposition method using selenourea as a selenide ion source from an aqueous alkaline medium. The effect of Zn ion concentration, bath temperature and deposition time period on the quality and thickness of ZnSe films has been studied. The ZnSe films have been characterized by XRD, TEM, EDAX, TRMC (time-resolved microwave conductivity), optical absorbance and RBS techniques for their structural, compositional, electronic and optical properties. The as-deposited ZnSe films are found to be amorphous, Zn rich with optical band gap, Eg, equal to 2.9 eV

Coherent optical nonlinearities and phase relaxation of quasi-three-dimensional and quasi-two-dimensional excitons in ZnSxSe1 - x/ZnSe structures

DEFF Research Database (Denmark)

Wagner, Hans Peter; Schätz, A.; Maier, R.

1997-01-01

We investigate the dephasing of heavy-hole excitons in different free-standing ZnSxSe1-x/ZnSe layer structures by spectrally resolved transient four-wave mixing. ZnSe layers of 80, 8, and 4 nm thickness with ternary barriers are studied, representing the crossover from quasi-three-dimensional to ...

Hybrid AC EL structures with thin protective ZnO film

International Nuclear Information System (INIS)

Tsvetkova, E; Dikov, H; Kolentsov, K; Yourukova, L; Zhechev, D; Steflekova, V

2008-01-01

Alternating current hybrid electroluminescent Al/SnO 2 /ZnS: Cu/ZnO/Al structures with blue emission have been prepared. In these ZnO films are used as protective layers. The optical properties of different RF magnetron sputtered ZnO films have been studied. The voltage - brightness characteristics of AC EL structures with a ZnO protective film and conventional structures with a TiO 2 protective layer are compared. The investigation shows that the brightness of the structures with a ZnO protective film is higher. The improved characteristics of these new hybrid structures could be used in preparing various systems for representation of permanent or variable light information

Influence of seed layer treatment on low temperature grown ZnO nanotubes: Performances in dye sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Ameen, Sadia [Energy Materials and Surface Science Laboratory, Solar Energy Research Center, School of Chemical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Akhtar, M. Shaheer [School of Semiconductor and Chemical Engineering and Solar Energy Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); New and Renewable Energy Material Development Center (NewREC), Chonbuk National University, Buan-gun, Jeonbuk (Korea, Republic of); Kim, Young Soon [Energy Materials and Surface Science Laboratory, Solar Energy Research Center, School of Chemical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Yang, O-Bong [School of Semiconductor and Chemical Engineering and Solar Energy Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Shin, Hyung-Shik, E-mail: hsshin@jbnu.ac.k [Energy Materials and Surface Science Laboratory, Solar Energy Research Center, School of Chemical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

2011-01-01

Non-aligned and highly densely aligned ZnO nanotube (NTs), synthesized by low temperature solution method were applied as photoanode materials for the fabrication of efficient dye-sensitized solar cells (DSSCs). The crystalline and the morphological analysis revealed that the grown aligned ZnO NTs possessed a typical hexagonal crystal structure of outer and inner diameter {approx}250 nm and {approx}100 nm, respectively. ZnO seeding on FTO substrates is an essential step to achieve the aligned ZnO NTs. A DSSC fabricated with aligned ZnO NTs photoanode achieved high solar-to-electricity conversion efficiency of {approx}2.2% with short circuit current (J{sub SC}) of 5.5 mA/cm{sup 2}, open circuit voltage (V{sub OC}) of 0.65 V and fill factor (FF) of 0.61. Significantly, the aligned ZnO NTs photoanode showed three times improved solar-to-electricity conversion efficiency than DSSC fabricated with non-aligned ZnO NTs. The enhanced performances were credited to the aligned morphology of ZnO NTs which executed the high charge collection and the transfer of electrons at the interfaces of ZnO NTs and electrolyte layer.

Facing-target sputtering deposition of ZnO films with Pt ultra-thin layers for gas-phase photocatalytic application

International Nuclear Information System (INIS)

Zhang Zhonghai; Hossain, Md. Faruk.; Arakawa, Takuya; Takahashi, Takakazu

2010-01-01

In this paper, various zinc oxide (ZnO) films are deposited by a versatile and effective dc-reactive facing-target sputtering method. The ratios of Ar to O 2 in the mixture gas are varied from 8:2 to 6:4 at a fixed sputtering pressure of 1.0 Pa. X-ray diffraction, spectrophotometer and scanning electron microscope are used to study the crystal structure, optical property and surface morphology of the as-deposited films. The Pt ultra-thin layer, ∼2 nm thick, is deposited on the surface of ZnO film by dc diode sputtering with a mesh mask controlling the coated area. The photocatalytic activity of ZnO films and Pt-ZnO films is evaluated by decomposition of methanol under UV-vis light irradiation. The variation of photocatalytic activity depends on the ratios of Ar to O 2 , which is mainly attributed to the different grain size and carrier mobility. Though the pure ZnO film normally shows a low gas-phase photocatalytic activity, its activity is significantly enhanced by depositing Pt ultra-thin layer.

Effect of ZnO and PbO/ZnO on structural and thermal properties of tellurite glasses

International Nuclear Information System (INIS)

Ramamoorthy, Raj Kumar; Bhatnagar, Anil K

2015-01-01

Highlights: • Structural units/linkages variation of TeO 2 -ZnO and TeO 2 -ZnO-PbO glasses was studied. • Structural arrangements of TeO 2 -ZnO glasses are rich in Te-O-Te network. • A mixture of Te-O-Te and Te-O-Pb networks is identified in TeO 2 -ZnO-PbO glasses. • Changes in thermal parameters T g and T o are correlated with the structural variations. • 15PbO and 20PbO samples of TeO 2 -ZnO-PbO glasses show large thermal stability. - Abstract: Two series of glasses, (100 − x)TeO 2 -xZnO (x = 20, 25, 30, 35) and 70TeO 2 -(30 − y)ZnO-yPbO (y = 5, 10, 15, 20), referred as TZ and TZP, respectively, were prepared by a melt quenching technique and characterized by X-ray diffraction (XRD), density, refractive index, Raman scattering and differential scanning calorimetry (DSC) to observe the changes in their properties as a function of ZnO and PbO/ZnO. Variations in individual structural units/linkages in these glasses are derived from the de-convoluted Raman spectra. The glass transition (T g ) and onset of crystallization (T o ) temperatures are determined from DSC isothermal scans. It is observed that the thermal stability (ΔT = T o − T g ) decreases for TZ glasses with increase in x, while it increases for TZP glasses with increase in y. Changes in thermal parameters of these glasses are correlated with the structural variation as a function of ZnO and PbO/ZnO ratio to determine the effect of substitution/addition of metal oxide, ZnO and PbO, to TeO 2 and TeO 2 -ZnO glasses

White organic light-emitting diodes with Zn-complexes.

Science.gov (United States)

Kim, Dong-Eun; Shin, Hoon-Kyu; Kim, Nam-Kyu; Lee, Burm-Jong; Kwon, Young-Soo

2014-02-01

This paper reviews OLEDs fabricated using Zn-complexes. Zn(HPB)2, Zn(HPB)q, and Zn(phen)q were synthesized as new electroluminescence materials. The electron affinity (EA) and ionization potential (IP) of Zn complexes were also determined and devices were characterized. Zn complexes such as Zn(HPB)2, Zn(HPB)q, and Zn(phen)q were found to exhibit blue and yellow emissions with wavelengths of 455, 532, and 535 nm, respectively. On the other hand, Zn(HPB)2 and Zn(HPB)q were applied as hole-blocking materials. As a result, the OLED efficiency by using Zn(HPB)2 as a hole-blocking material was improved. In particular, the OLED property of Zn(HPB)2 was found to be better than that of Zn(HPB)q. Moreover, Zn(phen)q was used as an electron-transporting material and compared with Alq3. The performance of the device with Zn(phen)q as an electron-transporting material was improved compared with Alq3-based devices. The Zn complexes can possibly be used as hole-blocking and electron-transporting materials in OLED devices. A white emission was ultimately realized from the OLED devices using Zn-complexes as inter-layer components.

The influence of the UV irradiation intensity on photocatalytic activity of ZnAl layered double hydroxides and derived mixed oxides

Directory of Open Access Journals (Sweden)

Hadnađev-Kostić Milica S.

2012-01-01

Full Text Available Layered double hydroxides (LDHs have been studied to a great extent as environmental-friendly complex materials that can be used as photocatalysts or photocatalyst supports. ZnAl layered double hydroxides and their derived mixed oxides were chosen for the investigation of photocatalytic performances in correlation with the UV intensities measured in the South Pannonia region. Low supersaturation coprecipitation method was used for the ZnAl LDH synthesis. For the characterization of LDH and thermal treated samples powder X-ray diffraction (XRD, scanning electron microscopy (SEM, electron dispersive spectroscopy (EDS, nitrogen adsorption-desorption were used. The decomposition of azodye, methylene blue was chosen as photocatalytic test reaction. The study showed that the ZnAl mixed oxide obtained by thermal decomposition of ZnAl LDH has stable activity in the broader UV light irradiation range characterizing the selected region. Photocatalytic activity could be mainly attributed to the ZnO phase, detected both in LDH and thermally treated samples. The study showed that the ZnAl mixed oxide obtained by the calcination of ZnAl LDH has a stable activity within the measured UV light irradiation range; whereas the parent ZnAl LDH catalyst did not perform satisfactory when low UV irradiation intensity is implied.

Sublattice-specific ordering of ZnO layers during the heteroepitaxial growth at different temperatures

International Nuclear Information System (INIS)

Redondo-Cubero, A.; Vinnichenko, M.; Muecklich, A.; Kolitsch, A.; Krause, M.; Munoz, E.; Gago, R.

2011-01-01

The effect of the substrate temperature on the sublattice ordering in ZnO layers grown by reactive pulsed magnetron sputtering on sapphire has been investigated by different techniques. The improvement of the crystal quality and heteroepitaxial growth at relatively low temperatures (550 deg. C) is verified by x-ray diffraction, high-resolution transmission electron microscopy, Rutherford backscattering spectrometry in channeling mode (RBS/C), and Raman spectroscopy. Sublattice-resolved analysis by resonant RBS/C and Raman spectroscopy reveals that the progressive transition to the single crystal phase is accomplished in a faster way for Zn- than for O-sublattice. This behavior is attributed to the preferential annealing of defects in the Zn sublattice at low temperatures when compared to those of the O sublattice.

Growth of Single- and Bilayer ZnO on Au(111) and Interaction with Copper

Energy Technology Data Exchange (ETDEWEB)

Deng, Xingyi; Yao, Kun; Sun, Keju; Li, Wei-Xue; Lee, Junseok; Matranga, Christopher

2013-05-02

The stoichiometric single- and bi-layer ZnO(0001) have been prepared by reactive deposition of Zn on Au(111) and studied in detail with X-ray photoelectron spectroscopy, scanning tunneling microscopy, and density functional theory calculations. Both single- and bi-layer ZnO(0001) adopt a planar, graphite-like structure similar to freestanding ZnO(0001) due to the weak van der Waals interactions dominating their adhesion with the Au(111) substrate. At higher temperature, the single-layer ZnO(0001) converts gradually to bi-layer ZnO(0001) due to the twice stronger interaction between two ZnO layers than the interfacial adhesion of ZnO with Au substrate. It is found that Cu atoms on the surface of bi-layer ZnO(0001) are mobile with a diffusion barrier of 0.31 eV, and likely to agglomerate and form nanosized particles at low coverages; while Cu atoms tend to penetrate a single layer of ZnO(0001) with a barrier of 0.10 eV, resulting in a Cu free surface.

Large linear magnetoresistance and magnetothermopower in layered SrZnSb$_2$

OpenAIRE

Wang, Kefeng; Petrovic, C.

2016-01-01

We report the large linear magnetoresistance ($\\sim 300\\%$ in 9 T field at 2 K) and magnetothermopower in layered SrZnSb$_2$ crystal with quasi-two-dimensional Sb layers. A crossover from the semiclassical parabolic field dependent magnetoresistance to linear field dependent magnetoresistance with increasing magnetic field is observed. The magnetoresistance behavior can be described very well by combining the semiclassical cyclotron contribution and the quantum limit magnetoresistance. Magnet...

Growth of ZnS-coated ZnO nanorod arrays on (1 0 0) silicon substrate by two-step chemical synthesis

International Nuclear Information System (INIS)

Kumarakuru, Haridas; Urgessa, Zelalem N.; Olivier, Ezra J.; Botha, Johannes R.; Venter, Andre; Neethling, Johannes H.

2014-01-01

Highlights: • ZnS coated ZnO nanorods were synthesized using a simple two-step chemical method. • The uniform ZnS coating exhibits a polycrystalline face centered cubic structure. • Initial ZnS deposit exhibits a partial epitaxial relationship with ZnO. • An ion-exchange reaction was deduced for this sulphidation process. • Detailed microscopy results are complemented by room temperature photoluminescence. - Abstract: In this study, ZnS coated ZnO nanorods were synthesized using a simple, cost effective two-step chemical method. A continuous coating of ZnS on a ZnO nanorod, having a uniform thickness, is demonstrated using high resolution transmission electron microscopy, electron energy loss spectroscopy and selected area diffraction (SAD). These core–shell structures can be produced at relatively low temperatures (75 °C) and within relatively short times (3 h). The ZnS coating exhibits a polycrystalline structure with a lattice parameter of 5.35 Å, which is 1.1% smaller than the unstrained cubic zinc-blende structure. The SAD pattern taken at the ZnO–ZnS interface exhibits a partial epitaxial relationship, where (1 0 –1 0) ZnO//(1 1 1) ZnS. Our detailed analysis shows that the ZnS shell comprises two different regions: a ZnS rich inner shell region is produced via the first sulphidation process, followed by a mixture of ZnO and ZnS in the outer shell region during the second treatment. From the detailed microscopy results a growth mechanism is proposed for each step of the sulphidation process. The results are complemented by room temperature photoluminescence spectroscopy. Strong emission from free excitons in ZnO is observed at 3.27 eV before ZnS coating, while a composite band peaking at 2.9 eV is measured after sulphidation. The origin of the latter will be discussed

Growth of ZnS-coated ZnO nanorod arrays on (1 0 0) silicon substrate by two-step chemical synthesis

Energy Technology Data Exchange (ETDEWEB)

Kumarakuru, Haridas, E-mail: haridas.kumarakuru@nmmu.ac.za [Centre for High Resolution Transmission Electron Microscopy (CHRTEM), Department of Physics, P.O.Box 77000, Nelson Mandela Metropolitan University (NMMU), Port Elizabeth 6031 (South Africa); Urgessa, Zelalem N. [Department of Physics, Nelson Mandela Metropolitan University (NMMU), P.O. Box 77000, Port Elizabeth 6031 (South Africa); Olivier, Ezra J. [Centre for High Resolution Transmission Electron Microscopy (CHRTEM), Department of Physics, P.O.Box 77000, Nelson Mandela Metropolitan University (NMMU), Port Elizabeth 6031 (South Africa); Botha, Johannes R.; Venter, Andre [Department of Physics, Nelson Mandela Metropolitan University (NMMU), P.O. Box 77000, Port Elizabeth 6031 (South Africa); Neethling, Johannes H. [Centre for High Resolution Transmission Electron Microscopy (CHRTEM), Department of Physics, P.O.Box 77000, Nelson Mandela Metropolitan University (NMMU), Port Elizabeth 6031 (South Africa); Department of Physics, Nelson Mandela Metropolitan University (NMMU), P.O. Box 77000, Port Elizabeth 6031 (South Africa)

2014-11-05

Highlights: • ZnS coated ZnO nanorods were synthesized using a simple two-step chemical method. • The uniform ZnS coating exhibits a polycrystalline face centered cubic structure. • Initial ZnS deposit exhibits a partial epitaxial relationship with ZnO. • An ion-exchange reaction was deduced for this sulphidation process. • Detailed microscopy results are complemented by room temperature photoluminescence. - Abstract: In this study, ZnS coated ZnO nanorods were synthesized using a simple, cost effective two-step chemical method. A continuous coating of ZnS on a ZnO nanorod, having a uniform thickness, is demonstrated using high resolution transmission electron microscopy, electron energy loss spectroscopy and selected area diffraction (SAD). These core–shell structures can be produced at relatively low temperatures (75 °C) and within relatively short times (3 h). The ZnS coating exhibits a polycrystalline structure with a lattice parameter of 5.35 Å, which is 1.1% smaller than the unstrained cubic zinc-blende structure. The SAD pattern taken at the ZnO–ZnS interface exhibits a partial epitaxial relationship, where (1 0 –1 0) ZnO//(1 1 1) ZnS. Our detailed analysis shows that the ZnS shell comprises two different regions: a ZnS rich inner shell region is produced via the first sulphidation process, followed by a mixture of ZnO and ZnS in the outer shell region during the second treatment. From the detailed microscopy results a growth mechanism is proposed for each step of the sulphidation process. The results are complemented by room temperature photoluminescence spectroscopy. Strong emission from free excitons in ZnO is observed at 3.27 eV before ZnS coating, while a composite band peaking at 2.9 eV is measured after sulphidation. The origin of the latter will be discussed.

Effect of atomic layer deposited Al2O3:ZnO alloys on thin-film silicon photovoltaic devices

Science.gov (United States)

Abdul Hadi, Sabina; Dushaq, Ghada; Nayfeh, Ammar

2017-12-01

In this work, we present the effects of the Al2O3:ZnO ratio on the optical and electrical properties of aluminum doped ZnO (AZO) layers deposited by atomic layer deposition, along with AZO application as the anti-reflective coating (ARC) layer and in heterojunction configurations. Here, we report complex refractive indices for AZO layers with different numbers of aluminum atomic cycles (ZnO:Al2O3 = 1:0, 39:1, 19:1, and 9:1) and we confirm their validity by fitting models to experimental data. Furthermore, the most conductive layer (ZnO:Al2O3 = 19:1, conductivity ˜4.6 mΩ cm) is used to fabricate AZO/n+/p-Si thin film solar cells and AZO/p-Si heterojunction devices. The impact of the AZO layer on the photovoltaic properties of these devices is studied by different characterization techniques, resulting in the extraction of recombination and energy band parameters related to the AZO layer. Our results confirm that AZO 19:1 can be used as a low cost and effective conductive ARC layer for solar cells. However, AZO/p-Si heterojunctions suffer from an insufficient depletion region width (˜100 nm) and recombination at the interface states, with an estimated potential barrier of ˜0.6-0.62 eV. The work function of AZO (ZnO:Al2O3 = 19:1) is estimated to be in the range between 4.36 and 4.57 eV. These material properties limit the use of AZO as an emitter in Si solar cells. However, the results imply that AZO based heterojunctions could have applications as low-cost photodetectors or photodiodes, operating under relatively low reverse bias.

Mechanism of Properties of Noble ZnS-SiO2 Protection Layer for Phase Change Optical Disk Media

Science.gov (United States)

Tsu, David V.; Ohta, Takeo

2006-08-01

A ZnS-SiO2 composite dielectric is widely used in the optical stack designs of rewritable optical recording media as an index-matching medium and as a protection layer for the high-index chalcogenide (compound with sixth group element of S, Se, Te) phase change material used in these media. The addition of Si and O to ZnS is primarily intended to stabilize against crystalline grain growth of ZnS with high numbers of direct overwriting cycles. In this study, we carry out infrared (IR) spectroscopy to clarify the role of Si in this stabilization process. IR spectroscopy is performed on sputter as-deposited and annealed ZnS-SiO2 dielectric protection layers. We find that Si exists not in the SiO2 oxide phase but as [SiS4-nOn] tetrahedrons. Moreover, zinc and sulfur do not exist as ZnS, but in highly chemically disordered ZnS:O crystallites. The highly directional and rigid covalent bonds in the [SiS4-nOn] tetrahedrons are key to establishing thermal stability against the coalescence of ZnS. The importance of the Si-S bond also extends into a more thorough understanding of the low thermal conductivity of the ZnS-SiO2 material. The consideration of elastic implications allows us to predict an average phonon velocity less than 50% compared to that in SiO2. With this, we predict a thermal conductivity of 0.0067 W cm-1 K-1 for this material, which is in complete agreement with measured values.

Possibility of using BeMgZnSe as a new cladding material for ZnSe-based blue laser diodes

International Nuclear Information System (INIS)

Kim, D. C.; Choi, J. H.; Yoo, K. H.; Kim, T. W.; Yao, T.

1999-01-01

We calculated the gain and the radiative recombination current density of ZnSe/Be x Mg y Zn 1-x-y Se/Be x Mg y Zn 1-x - y Se separate confinement heterostructure (SCH) laser diodes and compared the results with those for the more popular ZnSe/Zn 1-x Mg x S y Se 1-y /Zn 1-x Mg x S y Se 1-y system. For five different values of the cladding-layer energy gap (E g,c ), we sought the optimum SCH structure that had a minimum threshold current density for both quaternaries, and we compared the corresponding current densities. For the same E g,c , ZnMgSSe was found to have a smaller threshold current density. The threshold current density decreased rapidly with increasing. E g,c in both materials. Therefore, if the available energy gap of the BeMgZnSe cladding is larger than that of ZnMGZnSSe, BeMgZnSe may be the better choice

Studies of surface morphology and optical properties of ZnO nanostructures grown on different molarities of TiO_2 seed layer

International Nuclear Information System (INIS)

Asib, N. A. M.; Afaah, A. N.; Aadila, A.; Khusaimi, Z.; Rusop, M.

2016-01-01

Titanium dioxide (TiO_2) seed layer was prepared by using sol-gel spin-coating technique, followed by growth of 0.01 M of Zinc oxide (ZnO) nanostructures by solution-immersion. The molarities of TiO_2 seed layer were varied from 1.1 M to 0.100 M on glass substrates. The nanostructures thin films were characterized by Field Emission Scanning Electrons Microscope (FESEM), Photoluminescence (PL) spectroscopy and Ultraviolet-Visible (UV-Vis) spectroscopy. FESEM images demonstrate that needle-like ZnO nanostructures are formed on all TiO_2 seed layer. The smallest diameter of needle-like ZnO nanostructures (90.3 nm) were deposited on TiO_2 seed layer of 0.100 M. PL spectra of the TiO_2: ZnO nanostructures thin films show the blue shifted emissions in the UV regions compared to the ZnO thin film. Meanwhile, UV-vis spectra of films display high absorption in the UV region and high trasparency in the visible region. The highest absorbance at UV region was recorded for sample which has 0.100 M of TiO_2 seed layer.

Electrodeposition of Zn and Cu–Zn alloy from ZnO/CuO precursors in deep eutectic solvent

Energy Technology Data Exchange (ETDEWEB)

Xie, Xueliang [State Key Laboratory of Advanced Special Steel & Shanghai Key Laboratory of Advanced Ferrometallurgy & School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Zou, Xingli, E-mail: xinglizou@shu.edu.cn [State Key Laboratory of Advanced Special Steel & Shanghai Key Laboratory of Advanced Ferrometallurgy & School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Lu, Xionggang, E-mail: luxg@shu.edu.cn [State Key Laboratory of Advanced Special Steel & Shanghai Key Laboratory of Advanced Ferrometallurgy & School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Lu, Changyuan; Cheng, Hongwei; Xu, Qian [State Key Laboratory of Advanced Special Steel & Shanghai Key Laboratory of Advanced Ferrometallurgy & School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Zhou, Zhongfu [State Key Laboratory of Advanced Special Steel & Shanghai Key Laboratory of Advanced Ferrometallurgy & School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Institute of Mathematics and Physics, Aberystwyth University, Aberystwyth SY23 3BZ (United Kingdom)

2016-11-01

Graphical abstract: Micro/nanostructured Zn and Cu–Zn alloy films have been electrodeposited directly from ZnO/CuO precursors in ChCl/urea-based DES, the typical nucleation-growth mechanism and the micro/nanostructures-formation process are determined. Display Omitted - Highlights: • Micro/nanostructured Zn films have been electrodeposited directly from ZnO precursor in deep eutectic solvent (DES). • The morphology of the Zn electrodeposits depends on the cathodic potential and temperature. • The electrodeposited Zn films exhibit homogeneous morphologies with controllable particle sizes and improved corrosion resistance. • Cu–Zn alloy films have also been electrodeposited directly from their metal oxides precursors in DES. - Abstract: The electrodeposition of Zn and Cu–Zn alloy has been investigated in choline chloride (ChCl)/urea (1:2 molar ratio) based deep eutectic solvent (DES). Cyclic voltammetry study demonstrates that the reduction of Zn(II) to Zn is a diffusion-controlled quasi-reversible, one-step, two electrons transfer process. Chronoamperometric investigation indicates that the electrodeposition of Zn on a Cu electrode typically involves three-dimensional instantaneous nucleation with diffusion-controlled growth process. Micro/nanostructured Zn films can be obtained by controlling the electrodeposition potential and temperature. The electrodeposited Zn crystals preferentially orient parallel to the (101) plane. The Zn films electrodeposited under more positive potentials and low temperatures exhibit improved corrosion resistance in 3 wt% NaCl solution. In addition, Cu–Zn alloy films have also been electrodeposited directly from CuO–ZnO precursors in ChCl/urea-based DES. The XRD analysis indicates that the phase composition of the electrodeposited Cu–Zn alloy depends on the electrodeposition potential.

Synthesis and characterization of Zn(O,OH)S and AgInS2 layers to be used in thin film solar cells

Science.gov (United States)

Vallejo, W.; Arredondo, C. A.; Gordillo, G.

2010-11-01

In this paper AgInS2 and Zn(O,OH)S thin films were synthesized and characterized. AgInS2 layers were grown by co-evaporation from metal precursors in a two-step process, and, Zn(O,OH)S thin films were deposited from chemical bath containing thiourea, zinc acetate, sodium citrate and ammonia. X-ray diffraction measurements indicated that AgInS2 thin films grown with chalcopyrite structure, and the as-grown Zn(O,OH)S thin films were polycrystalline. It was also found that the AgInS2 films presented p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and energy band-gap Eg of about 1.95 eV, Zn(O,OH),S thin films presented Eg of about 3.89 eV. Morphological analysis showed that under this synthesis conditions Zn(O,OH),S thin films coated uniformly the absorber layer. Additionally, the Zn(O,OH)S kinetic growth on AgInS2 layer was studied also. Finally, the results suggest that these layers possibly could be used in one-junction solar cells and/or as top cell in a tandem solar cell.

Low temperature photoluminescence and photoacoustic characterization of Zn-doped InxGa1-xAsySb1-y epitaxial layers for photovoltaic applications

International Nuclear Information System (INIS)

Gomez-Herrera, M.L.; Herrera-Perez, J.L.; Rodriguez-Fragoso, P.; Riech, I.; Mendoza-Alvarez, J.G.

2008-01-01

In this paper we present results on the characterization of Zn-doped InGaAsSb epitaxial layers to be used in the development of stacked solar cells. Using the liquid phase epitaxy technique we have grown p-type InGaAsSb layers, using Zn as the dopant, and n-type Te-doped GaSb wafers as substrates. A series of Zn-doped InGaAsSb samples were prepared by changing the amount of Zn in the melt in the range: 0.1-0.9 mg to obtain different p-type doping levels, and consequently, different p-n region characteristics. Low temperature photoluminescence spectra (PL) were measured at 15 K using at various excitation powers in the range 80-160 mW. PL spectra show the presence of an exciton-related band emission around 0.642 eV and a band at 0.633 eV which we have related to radiative emission involving Zn-acceptors. Using the photoacoustic technique we measured the interface recombination velocities related to the interface crystalline quality, showing that the layer-substrate interface quality degrades as the Zn concentration in the layers increases

Device and performance parameters of Cu(In,Ga)(Se,S)2-based solar cells with varying i-ZnO layer thickness

International Nuclear Information System (INIS)

Macabebe, E.Q.B.; Sheppard, C.J.; Dyk, E.E. van

2009-01-01

In pursuit of low-cost and highly efficient thin film solar cells, Cu(In,Ga)(Se,S) 2 /CdS/i-ZnO/ZnO:Al (CIGSS) solar cells were fabricated using a two-step process. The thickness of i-ZnO layer was varied from 0 to 454 nm. The current density-voltage (J-V) characteristics of the devices were measured, and the device and performance parameters of the solar cells were obtained from the J-V curves to analyze the effect of varying i-ZnO layer thickness. The device parameters were determined using a parameter extraction method that utilized particle swarm optimization. The method is a curve-fitting routine that employed the two-diode model. The J-V curves of the solar cells were fitted with the model and the parameters were determined. Results show that as the thickness of i-ZnO was increased, the average efficiency and the fill factor (FF) of the solar cells increase. Device parameters reveal that although the series resistance increased with thicker i-ZnO layer, the solar cells absorbed more photons resulting in higher short-circuit current density (J sc ) and, consequently, higher photo-generated current density (J L ). For solar cells with 303-454 nm-thick i-ZnO layer, the best devices achieved efficiency between 15.24% and 15.73% and the fill factor varied between 0.65 and 0.67.

The effects of carbon coating on the electrochemical performances of ZnO in Ni–Zn secondary batteries

International Nuclear Information System (INIS)

Long, Wei; Yang, Zhanhong; Fan, Xinming; Yang, Bin; Zhao, Zhiyuan; Jing, Jing

2013-01-01

The ZnO samples coated with carbon are successfully synthesized by using a high energy ball milling method. The scanning electron microscopy (SEM) images and energy dispersive spectrometer (EDS) spectra of the carbon-coated ZnO and pure ZnO show that the carbon-coated ZnO (carbon source: glucose, citric acid) samples and the untreated ZnO sample have similar particle size and crystal form. The particles have prismatic microstructure whose sizes are about 100–200 nm. However, the carbon-coated ZnO (carbon source: sucrose) sample has become agglomeration after calcination whose size has been increased to 2–6 μm. The uncoated ZnO powders have more complete crystal shape and they are glazed quadrangular materials, while the carbon coated ZnO particles has a rough surface, which resulted from the growth of carbon coating on ZnO particles. X-ray diffraction (XRD) patterns of the carbon-coated ZnO and the pure ZnO show carbon formed on the surface of ZnO is amorphous. Tafel plot, cyclic voltammetry (CV), AC impedance spectroscopy and galvanostatic charge–discharge measurement are utilized to examine the electrochemical performances of the carbon-coated ZnO. The carbon-coated ZnO (carbon source: glucose) have the most positive steady-state potential and lowest corrosion current density in the zinc electrodes which indicates that it has a good anticorrosion ability. A lower charge platform and a higher discharge platform of carbon-coated ZnO indicate that it have a better charge/discharge performance as anodic material for Ni/Zn cells. A smaller ohmic resistance and charge-transfer resistance imply that the carbon film upon ZnO could greatly decrease the impedance of the reaction process. Meanwhile, the carbon-coated ZnO also showed more excellent cycling performance than pure ZnO. The reason of improvement about electrochemical performance can be ascribed as the unique structure of amorphous carbon layer

Luminescent, magnetic and optical properties of ZnO-ZnS nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Raleaooa, Pule V. [Department of Physics, University of the Free State, ZA 9300 Bloemfontein (South Africa); Department of Chemistry, University of the Free State, ZA 9300 (South Africa); Roodt, Andreas [Department of Chemistry, University of the Free State, ZA 9300 (South Africa); Mhlongo, Gugu G.; Motaung, David E. [DST/CSIR Nanotechnology Innovation Center, National Center for Nano-Structured Materials, Council for Scientific and Industrial Research, P.O. Box 395, ZA 0001 Pretoria (South Africa); Kroon, Robin E. [Department of Physics, University of the Free State, ZA 9300 Bloemfontein (South Africa); Ntwaeaborwa, Odireleng M., E-mail: ntwaeab@gmail.com [School of Physics, University of the Witwatersrand, Private Bag 3, Wits, ZA 2050 (South Africa)

2017-02-15

The structure, particle morphology, optical and magnetic properties of ZnO, ZnS and ZnO-ZnS nanoparticles prepared by the sol-gel method are reported. ZnO and ZnS were combined at room temperature by an ex situ synthetic route to prepare ZnO-ZnS nanocomposites. The nanocomposites exhibited particle morphology different from that of ZnO and ZnS nanoparticles. The ZnO and ZnS nanoparticles exhibited quantum confinement as inferred from the widening of their respective bandgap energies. The electron paramagnetic resonance data provided evidence for the existence of magnetic clusters near the surface, electron to nuclei interactions and defect states. The ZnO-ZnS nanocomposites exhibited tunable emission that was dependent on the ratio of ZnO to ZnS. These composites were evaluated for application in different types of light emitting devices.

Study of Cu2O\\ZnO nanowires heterojunction designed by combining electrodeposition and atomic layer deposition

Science.gov (United States)

Makhlouf, Houssin; Weber, Matthieu; Messaoudi, Olfa; Tingry, Sophie; Moret, Matthieu; Briot, Olivier; Chtoutou, Radhouane; Bechelany, Mikhael

2017-12-01

Cu2O/ZnO nanowires (NWs) heterojunctions were successfully prepared by combining Atomic layer Deposition (ALD) and Electrochemical Deposition (ECD) processes. The crystallinity, morphology and photoconductivity properties of the Cu2O/ZnO nanostructures have been investigated. The properties of the Cu2O absorber layer and the nanostructured heterojunction were studied in order to understand the mechanisms lying behind the low photoconductivity measured. It has been found that the interface state defects and the high resistivity of Cu2O film were limiting the photovoltaic properties of the prepared devices. The understanding presented in this work is expected to enable the optimization of solar cell devices based on Cu2O/ZnO nanomaterials and improve their overall performance.

ZnS nanostructured thin-films deposited by successive ionic layer adsorption and reaction

Energy Technology Data Exchange (ETDEWEB)

Deshmukh, S. G., E-mail: deshmukhpradyumn@gmail.com; Jariwala, Akshay; Agarwal, Anubha; Patel, Chetna; Kheraj, Vipul, E-mail: vipulkheraj@gmail.com [Department of Applied Physics, Sardar Vallabhbhai National Institute of Technology, Ichchhanath, Surat (India); Panchal, A. K. [Department of Electrical Engineering, Sardar Vallabhbhai National Institute of Technology, Ichchhanath, Surat (India)

2016-04-13

ZnS thin films were grown on glass substrate using successive ionic layer adsorption and reaction (SILAR) technique at room temperature. Aqueous solutions of ZnCl{sub 2} and Na{sub 2}S were used as precursors. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectroscopy and optical absorption measurements were applied to study the structural, surface morphology and optical properties of as-deposited ZnS thin films. The X-ray diffraction profiles revealed that ZnS thin films consist of crystalline grains with cubic phase. Spherical nano grains of random size and well covered on the glass substrate were observed from FESEM. The average grain size were found to be 77 nm, 100 nm and 124 nm for 20 cycles, 40 cycles and 60 cycles samples respectively. For 60 cycle sample, Raman spectra show two prominent peaks at 554 cm{sup −1} and 1094 cm{sup −1}. The optical band gap values were found to be 3.76 eV, 3.72 eV and 3.67 eV for 20 cycle, 40 cycle and 60 cycle samples respectively.

Advanced properties of Al-doped ZnO films with a seed layer approach for industrial thin film photovoltaic application

International Nuclear Information System (INIS)

Dewald, Wilma; Sittinger, Volker; Szyszka, Bernd; Säuberlich, Frank; Stannowski, Bernd; Köhl, Dominik; Ries, Patrick; Wuttig, Matthias

2013-01-01

Currently sputtered Al-doped ZnO films are transferred to industry for the application in thin film silicon solar modules. These films are known to easily form light trapping structures upon etching which are necessary for absorbers with low absorbance such as μc-Si. Up to now the best structures for high efficiency thin film silicon solar cells were obtained by low rate radio frequency (r.f.) sputtering of ceramic targets. However, for industrial application a high rate process is essential. Therefore a seed layer approach was developed to increase the deposition rate while keeping the desired etch morphology and electrical properties. Aluminum doped ZnO films were deposited dynamically by direct current (d.c.) magnetron sputtering from a ceramic ZnO:Al 2 O 3 target (1 wt.%) onto an additional seed layer prepared by r.f. sputtering. ZnO:Al films were investigated with respect to their optical and electrical properties as well as the morphology created after etching for a-Si/μc-Si solar cells. Additionally atomic force microscopy, scanning electron microscopy, X-ray diffraction and Hall measurements were performed, comparing purely r.f. or d.c. sputtered films with d.c. sputtered films on seed layers. With the seed layer approach it was possible to deposit ZnO:Al films with a visual transmittance of 83.5%, resistivity of 295 μΩ cm, electron mobility of 48.9 cm 2 /Vs and electron density of 4.3 · 10 20 cm −3 from a ceramic target at 330 °C. Etch morphologies with 1 μm lateral structure size were achieved. - Highlights: ► Seed layer approach for dynamic sputter deposition of enhanced quality ZnO:Al. ► A thin radio frequency sputtered ZnO:Al layer assists film nucleation on glass. ► Electron mobility was increased up to 49 cm 2 /Vs due to quasi-epitaxial film growth. ► Etch morphology exhibits 1 μm wide craters for light trapping in solar cells. ► The concept was transferred to a seed layer sputtered with direct current

Advanced properties of Al-doped ZnO films with a seed layer approach for industrial thin film photovoltaic application

Energy Technology Data Exchange (ETDEWEB)

Dewald, Wilma, E-mail: wilma.dewald@ist.fraunhofer.de [Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54E, 38108 Braunschweig (Germany); Sittinger, Volker; Szyszka, Bernd [Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54E, 38108 Braunschweig (Germany); Säuberlich, Frank; Stannowski, Bernd [Sontor GmbH, OT Thalheim, Sonnenallee 7-11, 06766 Bitterfeld-Wolfen (Germany); Köhl, Dominik; Ries, Patrick; Wuttig, Matthias [I. Physikalisches Institut (IA), RWTH Aachen, Sommerfeldstraße 14, 52074 Aachen (Germany)

2013-05-01

Currently sputtered Al-doped ZnO films are transferred to industry for the application in thin film silicon solar modules. These films are known to easily form light trapping structures upon etching which are necessary for absorbers with low absorbance such as μc-Si. Up to now the best structures for high efficiency thin film silicon solar cells were obtained by low rate radio frequency (r.f.) sputtering of ceramic targets. However, for industrial application a high rate process is essential. Therefore a seed layer approach was developed to increase the deposition rate while keeping the desired etch morphology and electrical properties. Aluminum doped ZnO films were deposited dynamically by direct current (d.c.) magnetron sputtering from a ceramic ZnO:Al{sub 2}O{sub 3} target (1 wt.%) onto an additional seed layer prepared by r.f. sputtering. ZnO:Al films were investigated with respect to their optical and electrical properties as well as the morphology created after etching for a-Si/μc-Si solar cells. Additionally atomic force microscopy, scanning electron microscopy, X-ray diffraction and Hall measurements were performed, comparing purely r.f. or d.c. sputtered films with d.c. sputtered films on seed layers. With the seed layer approach it was possible to deposit ZnO:Al films with a visual transmittance of 83.5%, resistivity of 295 μΩ cm, electron mobility of 48.9 cm{sup 2}/Vs and electron density of 4.3 · 10{sup 20} cm{sup −3} from a ceramic target at 330 °C. Etch morphologies with 1 μm lateral structure size were achieved. - Highlights: ► Seed layer approach for dynamic sputter deposition of enhanced quality ZnO:Al. ► A thin radio frequency sputtered ZnO:Al layer assists film nucleation on glass. ► Electron mobility was increased up to 49 cm{sup 2}/Vs due to quasi-epitaxial film growth. ► Etch morphology exhibits 1 μm wide craters for light trapping in solar cells. ► The concept was transferred to a seed layer sputtered with direct current.

Insitu grown superhydrophobic Zn-Al layered double hydroxides films on magnesium alloy to improve corrosion properties

Science.gov (United States)

Zhou, Meng; Pang, Xiaolu; Wei, Liang; Gao, Kewei

2015-05-01

A hierarchical superhydrophobic zinc-aluminum layered double hydroxides (Zn-Al LDHs) film has been fabricated on a magnesium alloy substrate via a facile hydrothermal crystallization method following chemical modification. The characteristics of the films were investigated by X-ray diffraction (XRD), scanning electronic microscope (SEM), and energy dispersive spectroscopy (EDS). XRD patterns and SEM images showed that the micro/nanoscale hierarchical LDHs film surfaces composed of ZnO nanorods and Zn-Al LDHs nanowalls structures. The static contact angle (CA) for the prepared surfaces was observed at around 165.6°. The corrosion resistance of the superhydrophobic films was estimated by electrochemical impedance spectroscopy (EIS) and potentiondynamic polarization measurement. EIS and polarization measurements revealed that the superhydrophobic Zn-Al LDHs coated magnesium alloy had better corrosion resistance in neutral 3.5 wt.% NaCl solution.

Structure and stacking faults in layered Mg-Zn-Y alloys: A first-principles study

International Nuclear Information System (INIS)

Datta, Aditi; Waghmare, U.V.; Ramamurty, U.

2008-01-01

We use first-principles density functional theory total energy calculations based on pseudo-potentials and plane-wave basis to assess stability of the periodic structures with different stacking sequences in Mg-Zn-Y alloys. For pure Mg, we find that the 6-layer (6l) structure with the ABACAB stacking is most stable after the lowest energy hcp (2l) structure with ABAB stacking. Addition of 2 at.% Y leads to stabilization of the structure to 6l sequence whereas the addition of 2 at.% Zn makes the 6l energetically comparable to that of the hcp. Stacking fault (SF) on the basal plane of 6l structure is higher in energy than that of the hcp 2l Mg, which further increases upon Y doping and decreases significantly with Zn doping. SF energy surface for the prismatic slip indicates activation of non-basal slip in alloys with a 6l structure. Charge density analysis shows that the 2l and 6l structures are electronically similar which might be a cause for better stability of 6l structure over a 4l sequence or other periodic structures. Thus, in an Mg-Zn-Y alloy, Y stabilizes the long periodicity, while its mechanical properties are further improved due to Zn doping

Electrodeposition of ZnO nano-wires lattices with a controlled morphology; Electrodepot de reseaux de nanofils de ZnO a morphologie controlee

Energy Technology Data Exchange (ETDEWEB)

Elias, J.; Tena-Zaera, R.; Katty, A.; Levy-Clement, C. [Centre National de la Recherche Scientifique (CNRS), Lab. de Chimie Metallurgique des Terres Rares, UPR 209, 94 - Thiais (France)

2006-07-01

In this work, it is shown that the electrodeposition is a changeable low cost method which allows, according to the synthesis conditions, to obtain not only plane thin layers of ZnO but different nano-structures too. In a first part, are presented the formation conditions of a compact thin layer of nanocrystalline ZnO electrodeposited on a conducing glass substrate. This layer plays a buffer layer role for the deposition of a lattice of ZnO nano-wires. The step of nano-wires nucleation is not only determined by the electrochemical parameters but by the properties of the buffer layer too as the grain sizes and its thickness. In this context, the use of an electrodeposition method in two steps allows to control the nano-wires length and diameter and their density. The morphology and the structural and optical properties of these nano-structures have been analyzed by different techniques as the scanning and transmission electron microscopy, the X-ray diffraction and the optical spectroscopy. These studies show that ZnO nano-structures are formed of monocrystalline ZnO nano-wires, presenting a great developed surface and a great optical transparency in the visible. These properties make ZnO a good material for the development of nano-structured photovoltaic cells as the extremely thin absorber cells (PV ETA) or those with dye (DSSC) which are generally prepared with porous polycrystalline TiO{sub 2}. Its replacement by a lattice of monocrystalline ZnO nano-wires allows to reduce considerably the number of grain boundaries and in consequence to improve the transport of the electrons. The results are then promising for the PV ETA cells with ZnO nano-wires. (O.M.)

Cu{sub 2}ZnSnS{sub 4} thin films obtained by sulfurization of evaporated Cu{sub 2}SnS{sub 3} and ZnS layers: Influence of the ternary precursor features

Energy Technology Data Exchange (ETDEWEB)

Robles, V.; Guillén, C., E-mail: c.guillen@ciemat.es; Trigo, J.F.; Herrero, J.

2017-04-01

Highlights: • Kesterite Cu{sub 2}ZnSnS{sub 4} is got by sulfurization of evaporated Cu{sub 2}SnS{sub 3} and ZnS layers. • Smooth films are obtained by decreasing the growth temperature of Cu{sub 2}SnS{sub 3}. • The lattice strain and the electrical conductivity increase with the Cu-content. • The energy gap diminishes as the Cu-content and/or the surface roughness increase. - Abstract: Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been grown by sulfurization of Cu{sub 2}SnS{sub 3} (CTS) and ZnS layers evaporated on glass substrates. Four CTS precursor films have been tested, with two different atomic compositions (Cu/Sn = 1.7 and Cu/Sn = 2.1) and substrate temperatures (350 and 450 °C), together with analogous ZnS layers deposited by maintaining the substrate at 200 °C. The sulfurization of the CTS and ZnS stacked layers was performed at 500 °C during 1 h. The evolution of the crystalline structure, morphology, optical and electrical properties from each CTS precursor to the CZTS compound has been studied, especially the influence of the ternary precursor features on the quaternary film characteristics. The kesterite structure has been identified after sulfurization of the various samples, with main (112) orientation and mean crystallite sizes S{sub 112} = 40–56 nm, being higher for the Cu-poor compositions. The CZTS average roughness has varied in a wide interval R{sub a} = 8–66 nm, being directly related to the CTS precursor layer, which becomes rougher for a higher deposition temperature or Cu content. Besides, the band gap energy and the electrical resistivity of the CZTS films have changed in the ranges E{sub g} = 1.54–1.64 eV and ρ = 0.2–40 Ωcm, both decreasing when the Cu content and/or the surface roughness increase.

Impact of thickness reduction of the ZnO:Al window layer on opto-electronical properties of CIGSSe solar cells

Energy Technology Data Exchange (ETDEWEB)

Keller, Jan; Knipper, M.; Parisi, J.; Riedel, I. [Thin Film Photovoltaics, University of Oldenburg, D-26111 Oldenburg (Germany); Dalibor, T.; Avellan, A. [AVANCIS GmbH and Co. KG, D-81739 Munich (Germany)

2011-07-01

The application of highly doped transparent conducting oxides in chalcopyrite solar cells requires an optimized trade-off between optical transmission and sheet-conductivity. In this respect we studied the thickness variation of ZnO:Al films used as window layer in Cu(In,Ga)(Se,S){sub 2} (CIGSSe) thin film solar cells. Thin ZnO:Al layers (200nm) on glass exhibit significantly enhanced transmission at wavelengths {lambda}<400nm while a considerable sub-bandgap absorption at {lambda}>800nm appears in thicker films which is attributed to free charge carrier absorption. The IV-characteristics of CIGSSe solar cells with d{sub ZnO:Al}=200nm exhibit a strong enhancement of the short-circuit current density J{sub SC} ({delta}J{sub SC}=3mA) as compared to samples with conventional ZnO:Al-film thickness. However, the reduced parallel (R{sub p}) and increased series (R{sub s}) resistance of samples with thin ZnO:Al-layer cause reduction of the fill factor, which has direct consequences for the series connection of cells in a CIGSSe-module. XRD-diffractograms suggest that the high R{sub s} in thin ZnO:Al is not only related to the thickness but also due to reduced (002)-texture that appears to be beneficial for lateral conductivity. By thermographic investigations we are able to directly locate the cell-regimes responsible for the decreased R{sub p}.

Efficiency enhancement in a single emission layer yellow organic light emitting device: Contribution of CIS/ZnS quantum dot

International Nuclear Information System (INIS)

Demir, Nuriye; Oner, Ilker; Varlikli, Canan; Ozsoy, Cihan; Zafer, Ceylan

2015-01-01

Electroluminescence (EL) efficiency from a single emission layer solution processed yellow emitting polymer, i.e. poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2,10,3}-thiadiazole)] end-capped with dimethylphenyl (ADS233YE), is firstly enhanced by the optimization of stock polymer concentrations and the coating rates, and then with the addition of copper indium disulfide/zinc sulfide (CIS/ZnS) core/shell quantum dots (QDs). Using these bare core/shell QDs as the active layer in the studied device gave no EL at all. However, yellow EL with the maximum brightness of 56834 cd/m 2 , maximum current efficiency of 4.7 cd/A and maximum power efficiency of 2.3 lm/W is obtained from the device structure of indium tin oxide/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/ADS233YE:0.4 wt.% CIS/ZnS QD/Ca/Al those of which correspond to approximately 4 and 2 folds of enhancements in the brightness and luminous and power efficiency values, respectively, compared to that of the device without CIS/ZnS. - Highlights: • Copper indium disulfide/zinc sulfide (CIS/ZnS) particles are synthesized. • Polymer light emitting diode performance of a yellow emitting polymer is enhanced. • The presence of CIS/ZnS in active layer enhanced the power efficiency two folds. • Optimum concentration of CIS/ZnS in polymer is 0.4 wt.%

Efficiency enhancement in a single emission layer yellow organic light emitting device: Contribution of CIS/ZnS quantum dot

Energy Technology Data Exchange (ETDEWEB)

Demir, Nuriye; Oner, Ilker; Varlikli, Canan, E-mail: canan.varlikli@ege.edu.tr; Ozsoy, Cihan; Zafer, Ceylan

2015-08-31

Electroluminescence (EL) efficiency from a single emission layer solution processed yellow emitting polymer, i.e. poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2,10,3}-thiadiazole)] end-capped with dimethylphenyl (ADS233YE), is firstly enhanced by the optimization of stock polymer concentrations and the coating rates, and then with the addition of copper indium disulfide/zinc sulfide (CIS/ZnS) core/shell quantum dots (QDs). Using these bare core/shell QDs as the active layer in the studied device gave no EL at all. However, yellow EL with the maximum brightness of 56834 cd/m{sup 2}, maximum current efficiency of 4.7 cd/A and maximum power efficiency of 2.3 lm/W is obtained from the device structure of indium tin oxide/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/ADS233YE:0.4 wt.% CIS/ZnS QD/Ca/Al those of which correspond to approximately 4 and 2 folds of enhancements in the brightness and luminous and power efficiency values, respectively, compared to that of the device without CIS/ZnS. - Highlights: • Copper indium disulfide/zinc sulfide (CIS/ZnS) particles are synthesized. • Polymer light emitting diode performance of a yellow emitting polymer is enhanced. • The presence of CIS/ZnS in active layer enhanced the power efficiency two folds. • Optimum concentration of CIS/ZnS in polymer is 0.4 wt.%.

ZnO nanorods/ZnS.(1,6-hexanediamine)0.5 hybrid nanoplates hierarchical heteroarchitecture with improved electrochemical catalytic properties for hydrazine

Science.gov (United States)

Wu, Zhengcui; Wu, Yaqin; Pei, Tonghui; Wang, Huan; Geng, Baoyou

2014-02-01

Novel hierarchical heteronanostructures of ZnO nanorods/ZnS.(HDA)0.5 (HDA = 1,6-hexanediamine) hybrid nanoplates on a zinc substrate are successfully synthesized on a large scale by combining hydrothermal growth (for ZnO nanorods) and liquid chemical conversion (for ZnS.(HDA)0.5 nanoplates) techniques. The formation of ZnS.(HDA)0.5 hybrid nanoplates branches takes advantage of the preferential binding of 1,6-hexanediamine on specific facets of ZnS, which makes the thickening rate much lower than the lateral growth rate. The ZnS.(HDA)0.5 hybrid nanoplates have a layered structure with 1,6-hexanediamine inserted into interlayers of wurtzite ZnS through the bonding of nitrogen. The number density and thickness of the secondary ZnS.(HDA)0.5 nanoplates can be conveniently engineered by variation of the sulfur source and straightforward adjustment of reactant concentrations such as 1,6-hexanediamine and the sulfur source. The fabricated ZnO/ZnS.(HDA)0.5 heteronanostructures show improved electrochemical catalytic properties for hydrazine compared with the primary ZnO nanorods. Due to its simplicity and efficiency, this approach could be similarly used to fabricate varieties of hybrid heterostructures made of materials with an intrinsic large lattice mismatch.Novel hierarchical heteronanostructures of ZnO nanorods/ZnS.(HDA)0.5 (HDA = 1,6-hexanediamine) hybrid nanoplates on a zinc substrate are successfully synthesized on a large scale by combining hydrothermal growth (for ZnO nanorods) and liquid chemical conversion (for ZnS.(HDA)0.5 nanoplates) techniques. The formation of ZnS.(HDA)0.5 hybrid nanoplates branches takes advantage of the preferential binding of 1,6-hexanediamine on specific facets of ZnS, which makes the thickening rate much lower than the lateral growth rate. The ZnS.(HDA)0.5 hybrid nanoplates have a layered structure with 1,6-hexanediamine inserted into interlayers of wurtzite ZnS through the bonding of nitrogen. The number density and thickness of the

Growth of novel ZnO nanostructures by soft chemical routes

International Nuclear Information System (INIS)

Saravana Kumar, R.; Sathyamoorthy, R.; Matheswaran, P.; Sudhagar, P.; Kang, Yong Soo

2010-01-01

Research highlights: Fabrication of diverse ZnO nanostructures through soft chemical routes is both fundamentally interesting and technologically important. Accordingly, in the present work novel ZnO nanostructures namely nanorods/nanospines were grown on glass substrate by integrating SILAR and CBD techniques. This simple approach not only would lead to the development of an effective and commercial growth process for diverse ZnO nanostructures, but also lead to the large-scale preparation of other nanomaterials for many important applications in nanotechnology. - Abstract: We explore a facile route to prepare one-dimensional (1D) ZnO nanostructures including nanorods/nanospines on glass substrates by integrating inexpensive successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition (CBD) methods. The effect of seed layer on the growth and morphology of the ZnO nanostructures was investigated. Accordingly, the surface modification of the seed layer prepared by SILAR was carried out by employing two different drying processes namely (a) allowing the hot substrate to cool for certain period of time before immersing in the ion-exchange bath, and (b) immediate immersion of the hot substrate into the ion-exchange bath. X-ray diffraction (XRD) analysis of the ZnO films revealed hexagonal wurtzite structure with preferential orientation along c-axis, while the scanning electron microscopy (SEM) revealed the dart-like and spherical shaped ZnO seed particles. ZnO nanostructures grown by CBD over the dart-like and spherical shaped ZnO seed particles resulted in the hierarchical and aligned ZnO nanospines/nanorods respectively. Room temperature photoluminescence (PL) study exhibited highly intense UV emission with weak visible emissions in the visible region. The growth mechanism and the role of seed layer morphology on the formation of ZnO nanostructures were discussed.

Growth of novel ZnO nanostructures by soft chemical routes

Energy Technology Data Exchange (ETDEWEB)

Saravana Kumar, R. [PG and Research, Department of Physics, Kongunadu Arts and Science College (Autonomous), Coimbatore 641 029, Tamil Nadu (India); Sathyamoorthy, R., E-mail: rsathya59@gmail.co [PG and Research, Department of Physics, Kongunadu Arts and Science College (Autonomous), Coimbatore 641 029, Tamil Nadu (India); Matheswaran, P. [PG and Research, Department of Physics, Kongunadu Arts and Science College (Autonomous), Coimbatore 641 029, Tamil Nadu (India); Sudhagar, P.; Kang, Yong Soo [Energy Materials Laboratory, WCU Program Department of Energy Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

2010-09-10

Research highlights: Fabrication of diverse ZnO nanostructures through soft chemical routes is both fundamentally interesting and technologically important. Accordingly, in the present work novel ZnO nanostructures namely nanorods/nanospines were grown on glass substrate by integrating SILAR and CBD techniques. This simple approach not only would lead to the development of an effective and commercial growth process for diverse ZnO nanostructures, but also lead to the large-scale preparation of other nanomaterials for many important applications in nanotechnology. - Abstract: We explore a facile route to prepare one-dimensional (1D) ZnO nanostructures including nanorods/nanospines on glass substrates by integrating inexpensive successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition (CBD) methods. The effect of seed layer on the growth and morphology of the ZnO nanostructures was investigated. Accordingly, the surface modification of the seed layer prepared by SILAR was carried out by employing two different drying processes namely (a) allowing the hot substrate to cool for certain period of time before immersing in the ion-exchange bath, and (b) immediate immersion of the hot substrate into the ion-exchange bath. X-ray diffraction (XRD) analysis of the ZnO films revealed hexagonal wurtzite structure with preferential orientation along c-axis, while the scanning electron microscopy (SEM) revealed the dart-like and spherical shaped ZnO seed particles. ZnO nanostructures grown by CBD over the dart-like and spherical shaped ZnO seed particles resulted in the hierarchical and aligned ZnO nanospines/nanorods respectively. Room temperature photoluminescence (PL) study exhibited highly intense UV emission with weak visible emissions in the visible region. The growth mechanism and the role of seed layer morphology on the formation of ZnO nanostructures were discussed.

Modeling and performance analysis dataset of a CIGS solar cell with ZnS buffer layer

Directory of Open Access Journals (Sweden)

Md. Billal Hosen

2017-10-01

Full Text Available This article represents the baseline data of the several semiconductor materials used in the model of a CIGS thin film solar cell with an inclusion of ZnS buffer layer. As well, input parameters, contact layer data and operating conditions for CIGS solar cell simulation with ZnS buffer layer have been described. The schematic diagram of photovoltaic solar cell has been depicted. Moreover, the most important performance measurement graph, J-V characteristic curve, resulting from CIGS solar cell simulation has been analyzed to estimate the optimum values of fill factor and cell efficiency. These optimum results have been obtained from the open circuit voltage, short circuit current density, and the maximum points of voltage and current density generated from the cell.

A layer-by-layer ZnO nanoparticle-PbS quantum dot self-assembly platform for ultrafast interfacial electron injection

KAUST Repository

Eita, Mohamed Samir

2014-08-28

Absorbent layers of semiconductor quantum dots (QDs) are now used as material platforms for low-cost, high-performance solar cells. The semiconductor metal oxide nanoparticles as an acceptor layer have become an integral part of the next generation solar cell. To achieve sufficient electron transfer and subsequently high conversion efficiency in these solar cells, however, energy-level alignment and interfacial contact between the donor and the acceptor units are needed. Here, the layer-by-layer (LbL) technique is used to assemble ZnO nanoparticles (NPs), providing adequate PbS QD uptake to achieve greater interfacial contact compared with traditional sputtering methods. Electron injection at the PbS QD and ZnO NP interface is investigated using broadband transient absorption spectroscopy with 120 femtosecond temporal resolution. The results indicate that electron injection from photoexcited PbS QDs to ZnO NPs occurs on a time scale of a few hundred femtoseconds. This observation is supported by the interfacial electronic-energy alignment between the donor and acceptor moieties. Finally, due to the combination of large interfacial contact and ultrafast electron injection, this proposed platform of assembled thin films holds promise for a variety of solar cell architectures and other settings that principally rely on interfacial contact, such as photocatalysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Influence of the magnetic dead layer thickness of Mg-Zn ferrites nanoparticle on their magnetic properties

Energy Technology Data Exchange (ETDEWEB)

El-Sayed, H.M. [Physics Department, Faculty of Science, Ain Shams University, Cairo (Egypt); Ali, I.A.; Azzam, A. [Nuclear Physics Department, Nuclear Research Center, Atomic Energy Authority (Egypt); Sattar, A.A. [Physics Department, Faculty of Science, Ain Shams University, Cairo (Egypt)

2017-02-15

Nanoparticle ferrite with chemical formula Mg{sub (1−x)}Zn{sub x}Fe{sub 2}O{sub 4} (where x=0.0, 0.2, 0.4, 0.6, 0.8 and 1) were prepared by sol-gel technique. Single phase structure of these ferrites was confirmed using X-ray diffraction (XRD). Transmission Electron Microscope (TEM) showed that the particle size of the samples in the range of (5.7–10.6 nm). The hysteresis studies showed superparamagnetic behaviour at room temperature. The magnetization behaviour with Zn-content is expressed in the light of Yafet-Kittel angles. The dead layer thickness (t) was calculated and its effect on the magnetization and magnetic losses was debated. The Specific Absorption Rate (SAR) in an alternating magnetic field with frequency 198 kHz for these ferrites has been studied. It is found that, the thickness of magnetic dead layer of the surface of the materials has greatly affected the SAR value of the samples. - Highlights: • Synthesis of Mg-Zn nanoparticle ferrite by sol-gel technique. • Methods of dead layer thickness calculation. • Magnetic behaviour explanation. • Relation between the Specific Absorption Rate, dead layer thickness and particle size.

Thermoelectric ZnO and ZnAl2O4

DEFF Research Database (Denmark)

Sommer, Sanna

2015-01-01

ZnO har vist sig at være et lovende termoelektrisk materiale. Den høje termiske ledningsevne kræver at man forsker i at finde en måde at sænke den. Tilstedeværelsen af både ZnAl2O4 og ZnO har vist sig at sænke den termiske ledningsevne for ZnO. Berardan et al. [5] har vist at når ZnAl2O4...... is tilstede på baggrund af en for høj aluminium doping koncentration under syntese af ZnO, så medfører tilstedeværelsen af ZnAl2O4 at zT sænkes. Modsat, så har Jood et al. vist at tildstedeværelsen af ZnAl2O4 kan medføre en aftagende termisk ledningsevne. På trods af en samtidig sænkning af den elektriske...... ledningsevne giver det overordnet en øget zT. Baillieul [29] har [20] syntetiseret ZnAl2O4 og ZnO separat, hvorefter krystalliterne er presset sammen. Det viser sig at medføre en øget elektrisk ledningsevne kombineret med aftagende termiske ledningsevne. Disse resultater viser at tilstedeværelsen af ZnAl2O4...

Resistivity of atomic layer deposition grown ZnO: The influence of deposition temperature and post-annealing

Energy Technology Data Exchange (ETDEWEB)

Laube, J., E-mail: laube@imtek.de; Nübling, D.; Beh, H.; Gutsch, S.; Hiller, D.; Zacharias, M.

2016-03-31

Conductive zinc oxide (ZnO) films deposited by atomic layer deposition were studied as function of post-annealing treatments. Effusion experiments were conducted on ZnO films deposited at different temperatures. The influence of different annealing atmospheres on the resistivity of the films was investigated and compared to reference samples. It was found that the influence of the deposition temperature on the resistivity is much higher than that of subsequent annealings. This leads to the conclusion that reduction of the resistivity by diffusion of different gases, such as oxygen and hydrogen, into annealed ZnO films is unlikely. - Highlights: • Conformal growth of ZnO-ALD over a temperature range of 25 °C up to 300 °C. • Post-annealing in different atmospheres (H{sub 2}, O{sub 2}, vacuum) and temperatures. • Analysis of film-conductivity and effusion characteristic.

Influence of Exciplex formation on the electroluminescent properties of dimeric Zn (II) bis-2-(2'-hydroxyphenyl) benzoxazole complex and monomeric Zn (II) 2-(1'-hydroxynaphthyl) benzothiazole complex

Science.gov (United States)

Prakash, Sattey; Anand, R. S.; Manoharan, S. Sundar

2011-10-01

In this paper we present the factors affecting electroluminescent properties of Zinc complexes of oxazole & thiazole derivatives. Electroluminescent spectra of the Zinc (II) complex of bis-[2-(2'-hydroxyphenyl) benzoxazole], [Zn (HPBO)2]2 and 2-(1'-hydroxynaphthyl) benzothiazole [Zn (HNBT)2] show unusual broadening and shows structural and photophysical similarity with [Zn (HPBT)2]2, a dimeric complex. The [Zn (HPBO)2]2 complex as an emissive layer in the device structure ITO /PEDOT:PSS /TPD (30nm) /[Zn (HPBO)2]2 (60nm) /BCP (6nm) /Ca (3nm) /Al (200nm) shows a broad bluish green emission, with a full width at half maxima (FWHM1˜70nm). The EL spectra is much broader compared to the PL spectra because of exciplex formation at the interfacial region between the emissive layer (EML) & hole transport layer (HTL). We also show the device performance of Zinc 2-(1'-hydroxynaphthyl) benzothiazole [Zn (HNBT)2] complex as emissive layer. Distinctly this device shows a broad greenish yellow emission with a peak maxima at 535nm and 690nm, owing to the exciplex formation between electron transport layer (ETL) and emissive layer (EML), which is in sharp contrast to the exciplex formation across the HTL-EML interface observed for the [Zn (HPBO)2]2 complex.

Single and multi-layered core-shell structures based on ZnO nanorods obtained by aerosol assisted chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Pizá-Ruiz, P.; Antúnez-Flores, W.; Ornelas-Gutiérrez, C.; Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx

2015-07-15

Core–shell nanorod structures were prepared by a sequential synthesis using an aerosol assisted chemical vapor deposition technique. Several samples consisting of ZnO nanorods were initially grown over TiO{sub 2} film-coated borosilicate glass substrates, following the synthesis conditions reported elsewhere. Later on, a uniform layer consisting of individual Al, Ni, Ti or Fe oxides was grown onto ZnO nanorod samples forming the so-called single MO{sub x}/ZnO nanorod core–shell structures, where MO{sub x} was the metal oxide shell. Additionally, a three-layer core–shell sample was developed by growing Fe, Ti and Fe oxides alternately, onto the ZnO nanorods. The microstructure of the core–shell materials was characterized by grazing incidence X-ray diffraction, scanning and transmission electron microscopy. Energy dispersive X-ray spectroscopy was employed to corroborate the formation of different metal oxides. X-ray diffraction outcomes for single core–shell structures showed solely the presence of ZnO as wurtzite and TiO{sub 2} as anatase. For the multi-layered shell sample, the existence of Fe{sub 2}O{sub 3} as hematite was also detected. Morphological observations suggested the existence of an outer material grown onto the nanorods and further microstructural analysis by HR-STEM confirmed the development of core–shell structures in all cases. These studies also showed that the individual Al, Fe, Ni and Ti oxide layers are amorphous; an observation that matched with X-ray diffraction analysis where no apparent extra oxides were detected. For the multi-layered sample, the development of a shell consisting of three different oxide layers onto the nanorods was found. Overall results showed that no alteration in the primary ZnO core was produced during the growth of the shells, indicating that the deposition technique used herein was and it is suitable for the synthesis of homogeneous and complex nanomaterials high in quality and purity. In addition

Luminescent, magnetic and optical properties of ZnO-ZnS nanocomposites

CSIR Research Space (South Africa)

Raleaooa, PV

2017-02-01

Full Text Available The structure, particle morphology, optical and magnetic properties of ZnO, ZnS and ZnO-ZnS nanoparticles prepared by the sol-gel method are reported. ZnO and ZnS were combined at room temperature by an ex situ synthetic route to prepare Zn...

Atomic layer epitaxy of ZnO for applications in molecular beam epitaxy growth of GaN and InGaN

International Nuclear Information System (INIS)

Godlewski, M.; Szczerbakow, A.; Ivanov, V. Yu.; Barski, A.; Goldys, E.M.

2000-01-01

We report the successful atomic layer epitaxy growth of thin ZnO films and their use for GaN and InGaN epitaxy. The properties of ZnO epilayers, obtained by four different procedures, are analysed, as well as of GaN and InGaN films grown on ZnO-coated Si and GaAs by MBE. (author)

Research on ZnO/Si heterojunction solar cells

DEFF Research Database (Denmark)

Chen, Li; Chen, Xinliang; Liu, Yiming

2017-01-01

We put forward an n-ZnO/p-Si heterojunction solar cell model based on AFORS-HET simulations and provide experimental support in this article. ZnO: B (B-doped ZnO) thin films deposited by metal-organic chemical vapor deposition (MOCVD) are planned to act as electrical emitter layer on p-type c...

Device and performance parameters of Cu(In,Ga)(Se,S){sub 2}-based solar cells with varying i-ZnO layer thickness

Energy Technology Data Exchange (ETDEWEB)

Macabebe, E.Q.B. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Sheppard, C.J. [Department of Physics, University of Johannesburg, P.O. Box 524, Auckland Park 2006 (South Africa); Dyk, E.E. van, E-mail: ernest.vandyk@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

2009-12-01

In pursuit of low-cost and highly efficient thin film solar cells, Cu(In,Ga)(Se,S){sub 2}/CdS/i-ZnO/ZnO:Al (CIGSS) solar cells were fabricated using a two-step process. The thickness of i-ZnO layer was varied from 0 to 454 nm. The current density-voltage (J-V) characteristics of the devices were measured, and the device and performance parameters of the solar cells were obtained from the J-V curves to analyze the effect of varying i-ZnO layer thickness. The device parameters were determined using a parameter extraction method that utilized particle swarm optimization. The method is a curve-fitting routine that employed the two-diode model. The J-V curves of the solar cells were fitted with the model and the parameters were determined. Results show that as the thickness of i-ZnO was increased, the average efficiency and the fill factor (FF) of the solar cells increase. Device parameters reveal that although the series resistance increased with thicker i-ZnO layer, the solar cells absorbed more photons resulting in higher short-circuit current density (J{sub sc}) and, consequently, higher photo-generated current density (J{sub L}). For solar cells with 303-454 nm-thick i-ZnO layer, the best devices achieved efficiency between 15.24% and 15.73% and the fill factor varied between 0.65 and 0.67.

Effects of synthetic Zn chelates on flax response and soil Zn status

Energy Technology Data Exchange (ETDEWEB)

Gonzalez, D.; Almendros, P.; Alvarez, J.M.

2016-11-01

Throughout the world, flax (Linum usitatissimum L.) is often grown in Zn-deficient soils, but appropriate fertilizer management can optimize both crop yield and micronutrient content. A greenhouse experiment was conducted on Typic Haploxeralf (pH 6.1) and Typic Calcixerept (pH 8.1) soils to study the relative efficiency of chelated Zn using two application rates of three different Zn sources [Zn-EDDHSA, ethylenediamine-di-(2-hydroxy-5-sulfophenylacetate of Zn); Zn-HEDTA, N-2-hydroxyethyl-ethylenediaminetriacetate of Zn; and Zn-EDTA, ethylenediaminetetraacetate of Zn]. Dry matter /DM) yield, Zn concentration, chlorophyll content, crude fiber and tensile properties were monitored and the soil-Zn status (available-Zn, Zn-fractions and total-Zn) was assessed. Zinc chelate applications increased the most labile forms of Zn in soils and Zn concentrations in plants. The low rate of Zn generally had a beneficial effect on DM yield and tensile properties. The exception was Zn-EDTA in the weakly acidic soil, where the highest Zn concentrations were observed in leaves and whole shoots; this coincided with the largest concentrations of labile Zn in soil. The most efficient fertilizers were Zn-EDDHSA (in both soils) and Zn-EDTA (in the calcareous soil). The relatively large amounts of labile and available Zn present in both of the soils fertilized with Zn-EDTA points to the applying this chelate at lower rate than 5 mg Zn/kg; this should, in turn, reduce the cost of Zn fertilization and minimize environmental pollution risk. (Author)

Structure and electronic properties of Zn-tetra-phenyl-porphyrin single- and multi-layers films grown on Fe(001)-p(1 × 1)O

Energy Technology Data Exchange (ETDEWEB)

Bussetti, Gianlorenzo, E-mail: gianlorenzo.bussetti@polimi.it; Calloni, Alberto; Celeri, Matteo; Yivlialin, Rossella; Finazzi, Marco; Bottegoni, Federico; Duò, Lamberto; Ciccacci, Franco

2016-12-30

Highlights: • ZnTPP/Fe(001)-p(1 × 1)O is a prototypical system to investigate the porphyrin/thin metal oxide film interaction. • Oxygen layer plays a crucial role in decreasing the porphyrin-substrate interaction. • An ordered ZnTPP (5 × 5) reconstruction is found on the nominal 1 ML-thick film. • On Fe(001)-p(1 × 1)O the electronic properties of the ZnTPP film are preserved with respect to other substrates. - Abstract: The structure and the electronic properties of thin (1 molecular layer) and thick (20 molecular layers) Zn-tetra-phenyl-porphyrin (ZnTPP) films grown on a single metal oxide (MO) layer, namely Fe(001)-p(1 × 1)O, are shown and discussed. During the first stages of deposition, the ultra-thin MO layer reduces the molecule-substrate interaction enhancing the molecular diffusivity with the respect to other investigated substrates [namely, Si(111), Au(001) and oxygen-free Fe(001)]. On Fe(001)-p(1 × 1)O, ZnTPP molecules form an ordered and stable square-lattice array. The photoemission analysis of the valence bands reveals that all the characteristic features of the molecule are already visible in the 1 monolayer-thick sample spectrum. Similarly, the core level investigation suggests a weak molecule perturbation. The ZnTPP/Fe(001)-p(1 × 1)O interface represents a prototypical system to investigate the organic film adhesion on ultra-thin MO layers and the processes involved during the film growth.