International Nuclear Information System (INIS)
Bianconi, A.; Missori, M.; Saini, N.L.; Oyanagi, H.; Yamaguchi, H.; Nishihara, Y.; Ha, D.H.; Della Longa, S.
1995-01-01
Here we report experimental evidence that the high Tc superconductivity in a cuprate perovskite occurs in a superlattice of quantum wires. The structure of the high Tc superconducting CuO 2 plane in Bi 2 Sr 2 CaCu 2 O 8+y (Bi2212) at the mesoscopic level (10-100 A) has been determined. It is decorated by a plurality of parallel superconducting stripes of width L=14± 1 A defined by the domain walls formed by stripes of width W=11+1 A characterized by a 0.17 A shorter Cu-O (apical) distance and a large tilting angle θ =12±4degree of the distorted square pyramids. We show that this particular heterostructure provides the physical mechanism raising Tc from the low temperature range Tc 2 plane by a factor ∼10 is realized by 1) tuning the Fermi level near the bottom of the second ubband of the stripes, with k y =2π/L, formed by the quantum size effect and 2) by forming a superlattice of wires with domain walls of width W of the order of the superconducting coherence length ξ 0 . (author)
Electronic properties of superlattices on quantum rings.
da Costa, D R; Chaves, A; Ferreira, W P; Farias, G A; Ferreira, R
2017-04-26
We present a theoretical study of the one-electron states of a semiconductor-made quantum ring (QR) containing a series of piecewise-constant wells and barriers distributed along the ring circumference. The single quantum well and the superlattice cases are considered in detail. We also investigate how such confining potentials affect the Aharonov-Bohm like oscillations of the energy spectrum and current in the presence of a magnetic field. The model is simple enough so as to allow obtaining various analytical or quasi-analytical results. We show that the well-in-a-ring structure presents enhanced localization features, as well as specific geometrical resonances in its above-barrier spectrum. We stress that the superlattice-in-a-ring structure allows giving a physical meaning to the often used but usually artificial Born-von-Karman periodic conditions, and discuss in detail the formation of energy minibands and minigaps for the circumferential motion, as well as several properties of the superlattice eigenstates in the presence of the magnetic field. We obtain that the Aharonov-Bohm oscillations of below-barrier miniband states are reinforced, owing to the important tunnel coupling between neighbour wells of the superlattice, which permits the electron to move in the ring. Additionally, we analysis a superlattice-like structure made of a regular distribution of ionized impurities placed around the QR, a system that may implement the superlattice in a ring idea. Finally, we consider several random disorder models, in order to study roughness disorder and to tackle the robustness of some results against deviations from the ideally nanostructured ring system.
Anisotropic behavior of quantum transport in graphene superlattices
DEFF Research Database (Denmark)
Pedersen, Jesper Goor; Cummings, Aron W.; Roche, Stephan
2014-01-01
We report on the possibility to generate highly anisotropic quantum conductivity in disordered graphene-based superlattices. Our quantum simulations, based on an efficient real-space implementation of the Kubo-Greenwood formula, show that in disordered graphene superlattices the strength of multi......We report on the possibility to generate highly anisotropic quantum conductivity in disordered graphene-based superlattices. Our quantum simulations, based on an efficient real-space implementation of the Kubo-Greenwood formula, show that in disordered graphene superlattices the strength...
Alvaro, M; Bonilla, L L; Carretero, M; Melnik, R V N; Prabhakar, S
2013-08-21
In this paper we develop a kinetic model for the analysis of semiconductor superlattices, accounting for quantum effects. The model consists of a Boltzmann-Poisson type system of equations with simplified Bhatnagar-Gross-Krook collisions, obtained from the general time-dependent Schrödinger-Poisson model using Wigner functions. This system for superlattice transport is supplemented by the quantum mechanical part of the model based on the Ben-Daniel-Duke form of the Schrödinger equation for a cylindrical superlattice of finite radius. The resulting energy spectrum is used to characterize the Fermi-Dirac distribution that appears in the Bhatnagar-Gross-Krook collision, thereby coupling the quantum mechanical and kinetic parts of the model. The kinetic model uses the dispersion relation obtained by the generalized Kronig-Penney method, and allows us to estimate radii of quantum wire superlattices that have the same miniband widths as in experiments. It also allows us to determine more accurately the time-dependent characteristics of superlattices, in particular their current density. Results, for several experimentally grown superlattices, are discussed in the context of self-sustained coherent oscillations of the current density which are important in an increasing range of current and potential applications.
Quantum ratchets for quantum communication with optical superlattices
International Nuclear Information System (INIS)
Romero-Isart, Oriol; Garcia-Ripoll, Juan Jose
2007-01-01
We propose to use a quantum ratchet to transport quantum information in a chain of atoms trapped in an optical superlattice. The quantum ratchet is created by a continuous modulation of the optical superlattice which is periodic in time and in space. Though there is zero average force acting on the atoms, we show that indeed the ratchet effect permits atoms on even and odd sites to move along opposite directions. By loading the optical lattice with two-level bosonic atoms, this scheme permits us to perfectly transport a qubit or entangled state imprinted in one or more atoms to any desired position in the lattice. From the quantum computation point of view, the transport is achieved by a smooth concatenation of perfect swap gates. We analyze setups with noninteracting and interacting particles and in the latter case we use the tools of optimal control to design optimal modulations. We also discuss the feasibility of this method in current experiments
Ordered quantum-ring chains grown on a quantum-dot superlattice template
International Nuclear Information System (INIS)
Wu Jiang; Wang, Zhiming M.; Holmes, Kyland; Marega, Euclydes; Mazur, Yuriy I.; Salamo, Gregory J.
2012-01-01
One-dimensional ordered quantum-ring chains are fabricated on a quantum-dot superlattice template by molecular beam epitaxy. The quantum-dot superlattice template is prepared by stacking multiple quantum-dot layers and quantum-ring chains are formed by partially capping quantum dots. Partially capping InAs quantum dots with a thin layer of GaAs introduces a morphological change from quantum dots to quantum rings. The lateral ordering is introduced by engineering the strain field of a multi-layer InGaAs quantum-dot superlattice.
Quantum conductance in silicon quantum wires
Bagraev, N T; Klyachkin, L E; Malyarenko, A M; Gehlhoff, W; Ivanov, V K; Shelykh, I A
2002-01-01
The results of investigations of electron and hole quantum conductance staircase in silicon quantum wires are presented. The characteristics of self-ordering quantum wells of n- and p-types, which from on the silicon (100) surface in the nonequilibrium boron diffusion process, are analyzed. The results of investigations of the quantum conductance as the function of temperature, carrier concentration and modulation degree of silicon quantum wires are given. It is found out, that the quantum conductance of the one-dimensional channels is observed, for the first time, at an elevated temperature (T >= 77 K)
Feshbach shape resonance for high Tc pairing in superlattices of quantum stripes and quantum wells
Directory of Open Access Journals (Sweden)
A Bianconi
2006-09-01
Full Text Available The Feshbach shape resonances in the interband pairing in superconducting superlattices of quantum wells or quantum stripes is shown to provide the mechanism for high Tc superconductivity. This mechanism provides the Tc amplification driven by the architecture of material: superlattices of quantum wells (intercalated graphite or diborides and superlattices of quantum stripes (doped high Tc cuprate perovskites where the chemical potential is tuned to a Van Hove-Lifshitz singularity (vHs in the electronic energy spectrum of the superlattice associated with the change of the Fermi surface dimensionality in one of the subbands.
Directory of Open Access Journals (Sweden)
Debashis De
2011-07-01
Full Text Available The photoemission from quantum wires and dots of effective mass superlattices of optoelectronic materials was investigated on the basis of newly formulated electron energy spectra, in the presence of external light waves, which controls the transport properties of ultra-small electronic devices under intense radiation. The effect of magnetic quantization on the photoemission from the aforementioned superlattices, together with quantum well superlattices under magnetic quantization, has also been investigated in this regard. It appears, taking HgTe/Hg1−xCdxTe and InxGa1−xAs/InP effective mass superlattices, that the photoemission from these quantized structures is enhanced with increasing photon energy in quantized steps and shows oscillatory dependences with the increasing carrier concentration. In addition, the photoemission decreases with increasing light intensity and wavelength as well as with increasing thickness exhibiting oscillatory spikes. The strong dependence of the photoemission on the light intensity reflects the direct signature of light waves on the carrier energy spectra. The content of this paper finds six different applications in the fields of low dimensional systems in general.
Hot electrons in superlattices: quantum transport versus Boltzmann equation
DEFF Research Database (Denmark)
Wacker, Andreas; Jauho, Antti-Pekka; Rott, S.
1999-01-01
A self-consistent solution of the transport equation is presented for semiconductor superlattices within different approaches: (i) a full quantum transport model based on nonequilibrium Green functions, (ii) the semiclassical Boltzmann equation for electrons in a miniband, and (iii) Boltzmann...
Quantum Transport: The Link between Standard Approaches in Superlattices
DEFF Research Database (Denmark)
Wacker, Andreas; Jauho, Antti-Pekka
1998-01-01
Theories describing electrical transport in semiconductor superlattices can essentially be divided in three disjoint categories: (i) transport in a miniband; (ii) hopping between Wannier-Stark ladders; and (iii) sequential tunneling. We present a quantum transport model, based on nonequilibrium G...
Tunneling in quantum superlattices with variable lacunarity
Energy Technology Data Exchange (ETDEWEB)
Villatoro, Francisco R. [Departamento de Lenguajes y Ciencias de la Computacion, Universidad de Malaga, E-29071 Malaga (Spain); Monsoriu, Juan A. [Departamento de Fisica Aplicada, Universidad Politecnica de Valencia, E-46022 Valencia (Spain)], E-mail: jmonsori@fis.upv.es
2008-05-19
Fractal superlattices are composite, aperiodic structures comprised of alternating layers of two semiconductors following the rules of a fractal set. The scattering properties of polyadic Cantor fractal superlattices with variable lacunarity are determined. The reflection coefficient as a function of the particle energy and the lacunarity parameter present tunneling curves, which may be classified as vertical, arc, and striation nulls. Approximate analytical formulae for such curves are derived using the transfer matrix method. Comparison with numerical results shows good accuracy. The new results may be useful in the development of band-pass energy filters for electrons, semiconductor solar cells, and solid-state radiation sources up to THz frequencies.
DEFF Research Database (Denmark)
Langbein, Wolfgang Werner; Gislason, Hannes; Hvam, Jørn Märcher
1998-01-01
The realization of one-dimensional (1D) semiconductor nanostructures with large confinement energies is of importance for device applications. Different techniques such as growth on tilted substrates (Serpentine superlattices) or prepatterned substrates (V-groove quantum wires) and the cleaved...
High-electric-field quantum transport theory for semiconductor superlattices
International Nuclear Information System (INIS)
Nguyen Hong Shon; Nazareno, H.N.
1995-12-01
Based on the Baym-Kadanoff-Keldysh nonequilibrium Green's functions technique, a quantum transport theory for semiconductor superlattices under high-electric field is developed. This theory is capable of considering collisional broadening, intra-collisional field effects and band transport and hopping regimes simultaneously. Numerical calculations for narrow-miniband superlattices in high electric field, when the hopping regime dominates are in reasonable agreement with experimental results and show a significant deviation from the Boltzmann theory. A semiphenomenological formula for current density in hopping regime is proposed. (author). 60 refs, 4 figs
Transparency in nanophotonic quantum wires
Energy Technology Data Exchange (ETDEWEB)
Singh, Mahi R [Department of Physics and Astronomy, University of Western Ontario, London N6A 3K7 (Canada)
2009-03-28
We have studied the quantum optics of a photonic quantum nanowire doped with an ensemble of three-level nanoparticles. The wire is made from two photonic crystals A and B. Crystal A is embedded within crystal B and acts as a photonic nanowire. It is considered that the conduction band of crystal A lies below that of crystal B. As a result, photons are confined in crystal A and are reflected from crystal B. The bound states of the confined photons are calculated using the transfer matrix method. It is found that the number of bound states in the wire depends on the size of the wire and the energy difference between the conduction band extrema of crystals A and B. The absorption coefficient of the system has also been calculated using the Schroedinger equation method. It is considered that the nanoparticles interact with the photonic bound states. Numerical simulations show that when one of the resonance energies lies near the bound state, the system becomes transparent. However, when the resonance energy lies away from the bound state the crystal reverts to an absorbing state. Similarly, when the radius of the dielectric spheres is changed the location of the transparency peak is shifted. This means that the present system can be switched between two states by changing the size of the wire and the transition energy. These findings can be used to make new types of optical devices.
Transparency in nanophotonic quantum wires
International Nuclear Information System (INIS)
Singh, Mahi R
2009-01-01
We have studied the quantum optics of a photonic quantum nanowire doped with an ensemble of three-level nanoparticles. The wire is made from two photonic crystals A and B. Crystal A is embedded within crystal B and acts as a photonic nanowire. It is considered that the conduction band of crystal A lies below that of crystal B. As a result, photons are confined in crystal A and are reflected from crystal B. The bound states of the confined photons are calculated using the transfer matrix method. It is found that the number of bound states in the wire depends on the size of the wire and the energy difference between the conduction band extrema of crystals A and B. The absorption coefficient of the system has also been calculated using the Schroedinger equation method. It is considered that the nanoparticles interact with the photonic bound states. Numerical simulations show that when one of the resonance energies lies near the bound state, the system becomes transparent. However, when the resonance energy lies away from the bound state the crystal reverts to an absorbing state. Similarly, when the radius of the dielectric spheres is changed the location of the transparency peak is shifted. This means that the present system can be switched between two states by changing the size of the wire and the transition energy. These findings can be used to make new types of optical devices.
Valley-chiral quantum Hall state in graphene superlattice structure
Tian, H. Y.; Tao, W. W.; Wang, J.; Cui, Y. H.; Xu, N.; Huang, B. B.; Luo, G. X.; Hao, Y. H.
2016-05-01
We theoretically investigate the quantum Hall effect in a graphene superlattice (GS) system, in which the two valleys of graphene are coupled together. In the presence of a perpendicular magnetic field, an ordinary quantum Hall effect is found with the sequence σxy=ν e^2/h(ν=0,+/-1,+/-2,\\cdots) . At the zeroth Hall platform, a valley-chiral Hall state stemming from the single K or K' valley is found and it is localized only on one sample boundary contributing to the longitudinal conductance but not to the Hall conductivity. Our findings may shed light on the graphene-based valleytronics applications.
Spin correlations in quantum wires
Sun, Chen; Pokrovsky, Valery L.
2015-04-01
We consider theoretically spin correlations in a one-dimensional quantum wire with Rashba-Dresselhaus spin-orbit interaction (RDI). The correlations of noninteracting electrons display electron spin resonance at a frequency proportional to the RDI coupling. Interacting electrons, upon varying the direction of the external magnetic field, transit from the state of Luttinger liquid (LL) to the spin-density wave (SDW) state. We show that the two-time total-spin correlations of these states are significantly different. In the LL, the projection of total spin to the direction of the RDI-induced field is conserved and the corresponding correlator is equal to zero. The correlators of two components perpendicular to the RDI field display a sharp electron-spin resonance driven by the RDI-induced intrinsic field. In contrast, in the SDW state, the longitudinal projection of spin dominates, whereas the transverse components are suppressed. This prediction indicates a simple way for an experimental diagnostic of the SDW in a quantum wire. We point out that the Luttinger model does not respect the spin conservation since it assumes the infinite Fermi sea. We propose a proper cutoff to correct this failure.
Dynamic localization in finite quantum dot superlattices
International Nuclear Information System (INIS)
Madureira, Justino R.; Schulz, Peter A.; Maialle, Marcelo Z.
2004-01-01
Full text: The dynamic properties of electrons and holes in low dimensional systems, driven by ac fields, reveal exciting emergent phenomena in the time span around the turn of the century. Such a rich scenario has been established by the concurrent development of powerful theoretical analysis tools, design and realization of high quality nano structured devices, as well as of tunable microwave and T Hz ac field sources. These striking developments made possible the exploration of the interaction of T Hz fields with condensed matter, leading even to biological tissue imaging. Therefore, a microscopic understanding of the T Hz field effects on designed nano structures constitute an important framework for further developments. A very interesting example in this context is the prediction of dynamic localization, which has been a subject of intense research in the past few years, from both theoretical and experimental point of views. The initial prediction states that, within a single band tight-binding approximation, an initially localized particle will return to its initial state following the periodical evolution of a driving pure sinusoidal field. This phenomenon can be simply visualized by the related collapse of the quasi energy mini bands, i.e., the localization of electronic states of a periodic unidimensional structure in real space driven by a field periodic in time. Such collapses occur whenever the field intensity/frequency ratio, eaF/(h/2π)ω, is a root of the zero-order Bessel function of the first kind. The quest for experimental signatures of dynamic localization is an involved task, since a variety of perturbations to an ideal situation is always present in real systems. The question that has to be answered is how the dynamic localization, related to the quasi-energy mini band collapses, may be identified in a context where concurring effects also tend to modify the quasi-energy spectra. For semiconductor superlattices, dynamic localization has been
Resonant tunneling of electrons in quantum wires
International Nuclear Information System (INIS)
Krive, I.V.; Shekhter, R.I.; Jonson, M.; Krive, I.V.
2010-01-01
We considered resonant electron tunneling in various nanostructures including single wall carbon nanotubes, molecular transistors and quantum wires formed in two-dimensional electron gas. The review starts with a textbook description of resonant tunneling of noninteracting electrons through a double-barrier structure. The effects of electron-electron interaction in sequential and resonant electron tunneling are studied by using Luttinger liquid model of electron transport in quantum wires. The experimental aspects of the problem (fabrication of quantum wires and transport measurements) are also considered. The influence of vibrational and electromechanical effects on resonant electron tunneling in molecular transistors is discussed.
Nanophysics in graphene: neutrino physics in quantum rings and superlattices.
Fertig, H A; Brey, Luis
2010-12-13
Electrons in graphene at low energy obey a two-dimensional Dirac equation, closely analogous to that of neutrinos. As a result, quantum mechanical effects when the system is confined or subjected to potentials at the nanoscale may be quite different from what happens in conventional electronic systems. In this article, we review recent progress on two systems where this is indeed the case: quantum rings and graphene electrons in a superlattice potential. In the former case, we demonstrate that the spectrum reveals signatures of 'effective time-reversal symmetry breaking', in which the spectra are most naturally interpreted in terms of effective magnetic flux contained in the ring, even when no real flux is present. A one-dimensional superlattice potential is shown to induce strong band-structure changes, allowing the number of Dirac points at zero energy to be manipulated by the strength and/or period of the potential. The emergence of new Dirac points is shown to be accompanied by strong signatures in the conduction properties of the system.
International Nuclear Information System (INIS)
Bouchard, A.M.
1994-01-01
This report discusses the following topics: Bloch oscillations and other dynamical phenomena of electrons in semiconductor superlattices; solvable dynamical model of an electron in a one-dimensional aperiodic lattice subject to a uniform electric field; and quantum dynamical phenomena of electrons in aperiodic semiconductor superlattices
High resolution STEM of quantum dots and quantum wires
DEFF Research Database (Denmark)
Kadkhodazadeh, Shima
2013-01-01
This article reviews the application of high resolution scanning transmission electron microscopy (STEM) to semiconductor quantum dots (QDs) and quantum wires (QWRs). Different imaging and analytical techniques in STEM are introduced and key examples of their application to QDs and QWRs...
Spin polarization of electrons in quantum wires
Vasilchenko, A. A.
2013-01-01
The total energy of a quasi-one-dimensional electron system is calculated using density functional theory. It is shown that spontaneous ferromagnetic state in quantum wire occurs at low one-dimensional electron density. The critical electron density below which electrons are in spin-polarized state is estimated analytically.
Spontaneous spin polarization in quantum wires
Energy Technology Data Exchange (ETDEWEB)
Vasilchenko, A.A., E-mail: a_vas2002@mail.ru
2015-12-04
The total energy of a quasi-one-dimensional electron system was calculated using the density functional theory. In the absence of a magnetic field, we have found that ferromagnetic state occurs in the quantum wires. The phase diagram of the transition into the spin-polarized state is constructed. The critical electron density below which electrons are in spin-polarized state is estimated analytically. - Highlights: • Density functional theory used to study a spin-polarized state in quantum wires. • The Kohn–Sham equation for quasi-one-dimensional electrons solved numerically. • The phase diagram of the transition into the spin-polarized state is constructed. • The electron density below which electrons are in a spin-polarized state was found. • The critical density of electrons was estimated analytically.
Spontaneous spin polarization in quantum wires
International Nuclear Information System (INIS)
Vasilchenko, A.A.
2015-01-01
The total energy of a quasi-one-dimensional electron system was calculated using the density functional theory. In the absence of a magnetic field, we have found that ferromagnetic state occurs in the quantum wires. The phase diagram of the transition into the spin-polarized state is constructed. The critical electron density below which electrons are in spin-polarized state is estimated analytically. - Highlights: • Density functional theory used to study a spin-polarized state in quantum wires. • The Kohn–Sham equation for quasi-one-dimensional electrons solved numerically. • The phase diagram of the transition into the spin-polarized state is constructed. • The electron density below which electrons are in a spin-polarized state was found. • The critical density of electrons was estimated analytically.
Disorder and Interaction Effects in Quantum Wires
International Nuclear Information System (INIS)
Smith, L W; Ritchie, D A; Farrer, I; Griffiths, J P; Jones, G A C; Thomas, K J; Pepper, M
2012-01-01
We present conductance measurements of quasi-one-dimensional quantum wires affected by random disorder in a GaAs/AlGaAs heterostructure. In addition to quantised conductance plateaux, we observe structure superimposed on the conductance characteristics when the channel is wide and the density is low. Magnetic field and temperature are varied to characterize the conductance features which depend on the lateral position of the 1D channel formed in a split-gate device. Our results suggest that there is enhanced backscattering in the wide channel limit, which gives rise to quantum interference effects. When the wires are free of disorder and wide, the confinement is weak so that the mutual repulsion of the electrons forces a single row to split into two. The relationship of this topological change to the disorder in the system will be discussed.
Electronic conductance of quantum wire with serial periodic potential structures
International Nuclear Information System (INIS)
Fayad, Hisham M.; Shabat, Mohammed M.; Abdus Salam International Centre for Theoretical Physics, Trieste
2000-08-01
A theory based on the total transfer matrix is presented to investigate the electronic conductance in a quantum wire with serial periodic potentials. We apply the formalism in computation of the electronic conductance in a wire with different physical parameters of the wire structure. The numerical results could be used in designing some future quantum electronic devices. (author)
Contact conductance between graphene and quantum wires
International Nuclear Information System (INIS)
Li Haidong; Zheng Yisong
2009-01-01
The contact conductance between graphene and two quantum wires which serve as the leads to connect graphene and electron reservoirs is theoretically studied. Our investigation indicates that the contact conductance depends sensitively on the graphene-lead coupling configuration. When each quantum wire couples solely to one carbon atom, the contact conductance vanishes at the Dirac point if the two carbon atoms coupling to the two leads belong to the same sublattice of graphene. We find that such a feature arises from the chirality of the Dirac electron in graphene. Such a chirality associated with conductance zero disappears when a quantum wire couples to multiple carbon atoms. The general result irrelevant to the coupling configuration is that the contact conductance decays rapidly with the increase of the distance between the two leads. In addition, in the weak graphene-lead coupling limit, when the distance between the two leads is much larger than the size of the graphene-lead contact areas and the incident electron energy is close to the Dirac point, the contact conductance is proportional to the square of the product of the two graphene-lead contact areas, and inversely proportional to the square of the distance between the two leads
Quantum photonics with quantum dots in photonic wires
DEFF Research Database (Denmark)
Munsch, Mathieu; Kuhlmann, Andreas; Cadeddu, Davide
2016-01-01
We present results from the spectroscopy of a single quantum dot in a photonic wire. The device presents a high photon extraction efficiency, and strong hybrid coupling to mechanical modes. We use resonance fluorescence to probe the emitter’s properties with the highest sensitivity. Weperform...
Quantum optics with quantum dots in photonic wires
DEFF Research Database (Denmark)
Munsch, Mathieu; Cadeddu, Davide; Teissier, Jean
2016-01-01
We present an exploration of the spectroscopy of a single quantum dot in a photonic wire. The device presents a high photon extraction efficiency, and strong hybrid coupling to mechanical modes. We use resonance fluorescence to probe the emitter's properties with the highest sensitivity, allowing...
Chemically Triggered Formation of Two-Dimensional Epitaxial Quantum Dot Superlattices
Walravens, Willem; De Roo, Jonathan; Drijvers, Emile; Ten Brinck, Stephanie; Solano, Eduardo; Dendooven, Jolien; Detavernier, Christophe; Infante, Ivan; Hens, Zeger
2016-01-01
Two dimensional superlattices of epitaxially connected quantum dots enable size-quantization effects to be combined with high charge carrier mobilities, an essential prerequisite for highly performing QD devices based on charge transport. Here, we demonstrate that surface active additives known to
Universal quantum computation in a semiconductor quantum wire network
International Nuclear Information System (INIS)
Sau, Jay D.; Das Sarma, S.; Tewari, Sumanta
2010-01-01
Universal quantum computation (UQC) using Majorana fermions on a two-dimensional topological superconducting (TS) medium remains an outstanding open problem. This is because the quantum gate set that can be generated by braiding of the Majorana fermions does not include any two-qubit gate and also no single-qubit π/8 phase gate. In principle, it is possible to create these crucial extra gates using quantum interference of Majorana fermion currents. However, it is not clear if the motion of the various order parameter defects (vortices, domain walls, etc.), to which the Majorana fermions are bound in a TS medium, can be quantum coherent. We show that these obstacles can be overcome using a semiconductor quantum wire network in the vicinity of an s-wave superconductor, by constructing topologically protected two-qubit gates and any arbitrary single-qubit phase gate in a topologically unprotected manner, which can be error corrected using magic-state distillation. Thus our strategy, using a judicious combination of topologically protected and unprotected gate operations, realizes UQC on a quantum wire network with a remarkably high error threshold of 0.14 as compared to 10 -3 to 10 -4 in ordinary unprotected quantum computation.
Spin-charge separation in quantum wires
International Nuclear Information System (INIS)
Yacoby, A.
2004-01-01
Full Text:Using momentum resolved tunneling between two clean parallel quantum wires in a AlGaAs/GaAs heterostructure we directly measure the dispersion of the quantum many-body modes in ballistic wires and follow their dependence on Coulomb interactions by varying the electron density. We find clear signatures of three excitation modes in the data: The anti-symmetric charge mode of the coupled wire system and two spin modes. The density dependence of the anti-symmetric charge mode agrees well with Luttinger-liquid theory. As the density of electrons is lowered, the Coulomb interaction is seen to become increasingly dominant leading to excitation velocities that are up to 2.5 times faster than the bare Fermi velocity, determined experimentally from the carrier density. The symmetric charge excitation, also expected from theory, is, however, not visible in the data. The observed spin velocities are found to be 25% slower than the bare Fermi velocities and depend linearly on carrier density. The dispersions are mapped down to a critical density at which spontaneous localization is observed. Some of the experimental findings concerning this phase will be discussed
International Nuclear Information System (INIS)
Bhattacherjee, Aranya B; Jha, Pradip; Kumar, Tarun; Mohan, Man
2011-01-01
We study the physical properties of a Luttinger liquid in a superlattice that is characterized by alternating two tunneling parameters. Using the bosonization approach, we describe the corresponding Hubbard model by the equivalent Tomonaga-Luttinger model. We analyze the spin-charge separation and transport properties of the superlattice system. We suggest that cold Fermi gases trapped in a bichromatic optical lattice and coupled quantum dots offer the opportunity to measure these effects in a convenient manner. We also study the classical Ising chain with two tunneling parameters. We find that the classical two-point correlator decreases as the difference between the two tunneling parameters increases.
Electron Raman scattering in quantum well wires
International Nuclear Information System (INIS)
Zhao Xiangfu; Liu Cuihong
2007-01-01
Electron Raman scattering (ERS) is investigated in a semiconductor quantum well wire (QWW) of cylindrical geometry for T=0K and neglecting phonon-assisted transitions. The differential cross-section (DCS) involved in this process is calculated as a function of a scattering frequency and the cylindrical radius. Electron states are confined within a QWW. Single parabolic conduction and valence bands are assumed. The selection rules are studied. Singularities in the spectra are interpreted for various cylindrical radii. ERS discussed here can provide direct information about the electron band structure of the system
Nonlinear elasticity in wurtzite GaN/AlN planar superlattices and quantum dots
International Nuclear Information System (INIS)
Lepkowski, S.P.; Majewski, J.A.; Jurczak, G.
2005-01-01
The elastic stiffness tensor for wurtzite GaN and AlN show a significant hydrostatic pressure dependence, which id the evidence of nonlinear elasticity of these compounds. We have examined how the pressure dependence of elastic constants for wurtzite nitrides influences elastic and piezoelectric properties of GaN/AlN planar superlattices and quantum dots. Particularly we show that built-in hydrostatic pressure, present in both quantum wells of the GaN/AlN superlattices and GaN/AlN quantum dots, increases significantly by 0.3-0.7 GPa when nonlinear elasticity is used. Consequently, the compressive volumetric strain in quantum wells and quantum dots decreases in comparison to the case of the linear elastic theory, However, the-component of the built-in electric field in the quantum wells and quantum dots increases considerably when nonlinear elasticity is taken into account. Both effects, i.e., a decrease in the compressive volumetric strain as well as an increase in the built-in electric field, decrease the band-to-band transition energies in the quantum wells and quantum dots. (author)
Band Structure and Quantum Confined Stark Effect in InN/GaN superlattices
DEFF Research Database (Denmark)
Gorczyca, I.; Suski, T.; Christensen, Niels Egede
2012-01-01
InN/GaN superlattices offer an important way of band gap engineering in the blue-green range of the spectrum. This approach represents a more controlled method than the band gap tuning in quantum well systems by application of InGaN alloys. The electronic structures of short-period wurtzite InN/G...... wells and barriers one may tune band gaps over a wide spectral range, which provides flexibility in band gap engineering.......InN/GaN superlattices offer an important way of band gap engineering in the blue-green range of the spectrum. This approach represents a more controlled method than the band gap tuning in quantum well systems by application of InGaN alloys. The electronic structures of short-period wurtzite In......N/GaN(0001) superlattices are investigated, and the variation of the band gap with the thicknesses of the well and the barrier is discussed. Superlattices of the form mInN/nGaN with n ≥ m are simulated using band structure calculations in the Local Density Approximation with a semiempirical correction...
Strain distribution and band structure of InAs/GaAs quantum ring superlattice
Mughnetsyan, Vram; Kirakosyan, Albert
2017-12-01
The elastic strain distribution and the band structure of InAs/GaAs one-layer quantum ring superlattice with square symmetry has been considered in this work. The Green's function formalism based on the method of inclusions has been implied to calculate the components of the strain tensor, while the combination of Green's function method with the Fourier transformation to momentum space in Pikus-Bir Hamiltonian has been used for obtaining the miniband energy dispersion surfaces via the exact diagonalization procedure. The dependencies of the strain tensor components on spatial coordinates are compared with ones for single quantum ring and are in good agreement with previously obtained results for cylindrical quantum disks. It is shown that strain significantly affects the miniband structure of the superlattice and has contribution to the degeneracy lifting effect due to heavy hole-light hole coupling. The demonstrated method is simple and provides reasonable results for comparatively small Hamiltonian matrix. The obtained results may be useful for further investigation and construction of novel devices based on quantum ring superlattices.
International Nuclear Information System (INIS)
Zav'yalov, D. V.; Kryuchkov, S. V.
2008-01-01
The current flowing along a cylindrical quantum wire with a superlattice in the case of the simultaneous application of dc and ac fields is calculated. It is assumed that the wire contains impurity centers, whose ionization results in the generation of nonequilibrium carriers in the conduction band. It is found that the dependence of the steady component of the current on the ac-field frequency is a step-like function. It is shown that the distance between steps depends on the conduction miniband width and the transverse quantum confinement parameters and is independent of the impurity-level depth.
DEFF Research Database (Denmark)
Lyssenko, V. G.; Østergaard, John Erland; Hvam, Jørn Märcher
1999-01-01
Summary form only given. We focus on the ability to control the electronic coupling in coupled quantum wells with external E-fields leading to a strong modification of the coherent light emission, in particular at a bias where a superlattice-like miniband is formed. More specifically, we investig......Summary form only given. We focus on the ability to control the electronic coupling in coupled quantum wells with external E-fields leading to a strong modification of the coherent light emission, in particular at a bias where a superlattice-like miniband is formed. More specifically, we...... investigate a MBE-grown GaAs sample with a sequence of 15 single quantum wells having a successive increase of 1 monolayer in width ranging from 62 A to 102 A and with AlGaAs barriers of 17 Å....
Theoretical modelling of electron transport in InAs/GaAs quantum dot superlattices
International Nuclear Information System (INIS)
Vukmirovic, Nenad; Ikonic, Zoran; Savic, Ivana; Indjin, Dragan; Harrison, Paul
2006-01-01
A theoretical model describing the electron transport in InAs/GaAs quantum dot infrared photodetectors, modelled as ideal quantum dot superlattices, is presented. The carrier wave functions and energy levels were evaluated using the strain dependent 8-band k.p Hamiltonian and used to calculate all intra- and inter-period transition rates due to interaction with phonons and electromagnetic radiation. The interaction with longitudinal acoustic phonons and electromagnetic radiation was treated perturbatively within the framework of Fermi's golden rule, while the interaction with longitudinal optical phonons was considered taking into account their strong coupling to electrons. The populations of energy levels were then found from a system of rate equations, and the electron current in the superlattice was subsequently extracted. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Theoretical modelling of electron transport in InAs/GaAs quantum dot superlattices
Energy Technology Data Exchange (ETDEWEB)
Vukmirovic, Nenad; Ikonic, Zoran; Savic, Ivana; Indjin, Dragan; Harrison, Paul [School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT (United Kingdom)
2006-07-01
A theoretical model describing the electron transport in InAs/GaAs quantum dot infrared photodetectors, modelled as ideal quantum dot superlattices, is presented. The carrier wave functions and energy levels were evaluated using the strain dependent 8-band k.p Hamiltonian and used to calculate all intra- and inter-period transition rates due to interaction with phonons and electromagnetic radiation. The interaction with longitudinal acoustic phonons and electromagnetic radiation was treated perturbatively within the framework of Fermi's golden rule, while the interaction with longitudinal optical phonons was considered taking into account their strong coupling to electrons. The populations of energy levels were then found from a system of rate equations, and the electron current in the superlattice was subsequently extracted. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Biexciton binding energy in ZnSe quantum wells and quantum wires
DEFF Research Database (Denmark)
Wagner, Hans-Peter; Langbein, Wolfgang; Hvam, Jørn Märcher
2002-01-01
The biexciton binding energy E-XX is investigated in ZnSe/ZnMgSe quantum wells and quantum wires as a function of the lateral confinement by transient four-wave mixing. In the quantum wells one observes for decreasing well width a significant increase in the relative binding energy, saturating...... for well widths less than 8 nm. In the quantum wires an increase of 30% is found in the smallest quantum wire structures compared to the corresponding quantum well value. A simple analytical model taking into account the quantum confinement in these low-dimensional systems is used to explain...
Formation of superlattice with aligned plane orientation of colloidal PbS quantum dots
Mukai, Kohki; Fujimoto, Satoshi; Suetsugu, Fumimasa
2018-04-01
We investigated a method of forming a perfect quantum dot (QD) superlattice, in which each QD has the same plane orientation, by depositing colloidal PbS QDs with clear facets in solution. QD facets were controlled by adjusting the synthesis temperature. X-ray evaluation showed that the crystal orientations of the film with QDs having clear facets were aligned. The slow deposition promoted this crystal alignment. The red shift of photoluminescence wavelength caused by the film formation was larger with QDs having facets than with spherical QDs, suggesting that the connection of the wave function between QDs was better so that the quantum size effect was further reduced.
InGaNAs/GaAs multi-quantum wells and superlattices solar cells
International Nuclear Information System (INIS)
Courel Piedrahita, Maykel; Rimada Herrera, Julio Cesar; Hernandez Garcia, Luis
2011-01-01
A theoretical study of the GaAs/InGaNAs solar cells based on a multi-quantum wells (MQWSC) and superlattices (SLSC) configuration is presented for the first time. The conversion efficiency as a function of wells width and depth is modeled. The photon absorption increases with the well levels incorporation and therefore the photocurrent as well. It is shown that the MQWSC efficiency overcomes the solar cells without wells about 25%. A study of the SLSC viability is also presented. The conditions for resonant tunneling are established by the matrix transfer method for a superlattice with variable quantum wells width. The effective density of states and the absorption coefficients for SL structure are calculated in order to determinate the JV characteristic. The influence of the superlattice or cluster width in the cell efficiency is researched showing a better performance when width and the number of cluster are increased. The SLSC efficiency is compared with the optimum efficiency obtained for the MQWSC showing that it is reached an amazing increment of 27%. (author)
Exciton dephasing in ZnSe quantum wires
DEFF Research Database (Denmark)
Wagner, Hans Peter; Langbein, Wolfgang Werner; Hvam, Jørn Märcher
1998-01-01
The homogeneous linewidths of excitons in wet-etched ZnSe quantum wires of lateral sizes down to 23 nm are studied by transient four-wave mixing. The low-density dephasing time is found to increase with decreasing wire width. This is attributed mainly to a reduction of electron-exciton scattering...
Electron transport in quantum wires: possible current instability mechanism
International Nuclear Information System (INIS)
Sablikov, V.A.
2001-01-01
The electrons nonlinear and dynamic transition in quantum wires connecting the electron reservoirs, are studies with an account of the Coulomb interaction distribution of electron density between the reservoirs and the wire. It is established that there exist two processes, leading to electrical instability in such structure. One of them is expressed in form of multistability of the charge accumulated in the wire, and negative differential conductivity. The other one is connected with origination of negative dynamic conductivity in the narrow frequency range near the resonance frequency of the charge waves on the wire length [ru
Luttinger liquid behavior of weakly disordered quantum wires
International Nuclear Information System (INIS)
Palevski, A.; Levy, E.; Karpovski, M.; Tsukernik, A.; Dwir, B.; Kapon, E.
2005-01-01
Full Text:The talk will be devoted to the electronic transport in quantum nano wires. The temperature dependence of the conductance in long V-groove quantum wires fabricated in GaAs/AlGaAs heterostructures is consistent with recent theories given within the framework of the Luttinger liquid model, in the limit of weakly disordered wires. We show that for the relatively small amount of disorder in our quantum wires, the value of the interaction parameter g is g=0.66, which is the expected value for GaAs. However, samples with a higher level of disorder show conductance with stronger temperature dependence, which exceeds the range of validity of a perturbation theory. Trying to fit such data with perturbation-theory models leads inevitably to wrong (lower) values of g
InN/GaN quantum dot superlattices: Charge-carrier states and surface electronic structure
Kanouni, F.; Brezini, A.; Djenane, M.; Zou, Q.
2018-03-01
We have theoretically investigated the electron energy spectra and surface states energy in the three dimensionally ordered quantum dot superlattices (QDSLs) made of InN and GaN semiconductors. The QDSL is assumed in this model to be a matrix of GaN containing cubic dots of InN of the same size and uniformly distributed. For the miniband’s structure calculation, the resolution of the effective mass Schrödinger equation is done by decoupling it in the three directions within the framework of Kronig-Penney model. We found that the electrons minibands in infinite ODSLs are clearly different from those in the conventional quantum-well superlattices. The electrons localization and charge-carrier states are very dependent on the quasicrystallographic directions, the size and the shape of the dots which play a role of the artificial atoms in such QD supracrystal. The energy spectrum of the electron states localized at the surface of InN/GaN QDSL is represented by Kronig-Penney like-model, calculated via direct matching procedure. The calculation results show that the substrate breaks symmetrical shape of QDSL on which some localized electronic surface states can be produced in minigap regions. Furthermore, we have noticed that the surface states degeneracy is achieved in like very thin bands located in the minigaps, identified by different quantum numbers nx, ny, nz. Moreover, the surface energy bands split due to the reduction of the symmetry of the QDSL in z-direction.
Electronic Conduction through Atomic Chains, Quantum Well and Quantum Wire
International Nuclear Information System (INIS)
Sharma, A. C.
2011-01-01
Charge transport is dynamically and strongly linked with atomic structure, in nanostructures. We report our ab-initio calculations on electronic transport through atomic chains and the model calculations on electron-electron and electron-phonon scattering rates in presence of random impurity potential in a quantum well and in a quantum wire. We computed synthesis and ballistic transport through; (a) C and Si based atomic chains attached to metallic electrodes, (b) armchair (AC), zigzag (ZZ), mixed, rotated-AC and rotated-ZZ geometries of small molecules made of 2S, 6C and 4H atoms attaching to metallic electrodes, and (c) carbon atomic chain attached to graphene electrodes. Computed results show that synthesis of various atomic chains are practically possible and their transmission coefficients are nonzero for a wide energy range. The ab-initio calculations on electronic transport have been performed with the use of Landauer-type scattering formalism formulated in terms of Grben's functions in combination with ground-state DFT. The electron-electron and electron-phonon scattering rates have been calculated as function of excitation energy both at zero and finite temperatures for disordered 2D and 1D systems. Our model calculations suggest that electron scattering rates in a disordered system are mainly governed by effective dimensionality of a system, carrier concentration and dynamical screening effects.
Structural Investigations of GaAs/AIAs quantum wires and quantum dots
Darhuber, A.A.; Bauer, G.; Wang, P.D.; Song, Y.P.; Sotomayor Torres, C.M.; Holland, M.C.
1995-01-01
We have investigated periodic arrays of dry etched 150 nm and 175 nm wide, (110) oriented GaAs/AlAs quantum wires and quantum dots by means of reciprocal-space mapping using triple-axis X-ray diffractometry. From the X-ray data the lateral periodicity of wires and dots, the etch depth and the angle
The Quantum Socket: Wiring for Superconducting Qubits - Part 2
Bejanin, J. H.; McConkey, T. G.; Rinehart, J. R.; Bateman, J. D.; Earnest, C. T.; McRae, C. H.; Rohanizadegan, Y.; Shiri, D.; Mariantoni, M.; Penava, B.; Breul, P.; Royak, S.; Zapatka, M.; Fowler, A. G.
Quantum computing research has reached a level of maturity where quantum error correction (QEC) codes can be executed on linear arrays of superconducting quantum bits (qubits). A truly scalable quantum computing architecture, however, based on practical QEC algorithms, requires nearest neighbor interaction between qubits on a two-dimensional array. Such an arrangement is not possible with techniques that rely on wire bonding. To address this issue, we have developed the quantum socket, a device based on three-dimensional wires that enables the control of superconducting qubits on a two-dimensional grid. In this talk, we present experimental results characterizing this type of wiring. We will show that the quantum socket performs exceptionally well for the transmission and reflection of microwave signals up to 10 GHz, while minimizing crosstalk between adjacent wires. Under realistic conditions, we measured an S21 of -5 dB at 6 GHz and an average crosstalk of -60 dB. We also describe time domain reflectometry results and arbitrary pulse transmission tests, showing that the quantum socket can be used to control superconducting qubits.
Hopping mixed hybrid excitations in multiple composite quantum wire structures
International Nuclear Information System (INIS)
Nguyen Ba An; Tran Thai Hoa
1995-10-01
A structure consisting of N pairs of inorganic semiconductor and organic quantum wires is considered theoretically. In such an isolated pair of wires, while the intrawire coupling forms Wannier-Mott exciton in an inorganic semiconductor quantum wire and Frenkel exciton in an organic one, the interwire coupling gives rise to hybrid excitons residing within the pair. When N pairs of wires are packed together 2N new mixed hybrid modes appear that are the true elementary excitations and can hop throughout the whole structure. Energies and wave functions of such hopping mixed hybrid excitations are derived analytically in detail accounting for the global interwire coupling and the different polarization configurations. (author). 19 refs
Modeling of the Interminiband Absorption Coefficient in InGaN Quantum Dot Superlattices
Directory of Open Access Journals (Sweden)
Giovanni Giannoccaro
2016-01-01
Full Text Available In this paper, a model to estimate minibands and theinterminiband absorption coefficient for a wurtzite (WZ indium gallium nitride (InGaN self-assembled quantum dot superlattice (QDSL is developed. It considers a simplified cuboid shape for quantum dots (QDs. The semi-analytical investigation starts from evaluation through the three-dimensional (3D finite element method (FEM simulations of crystal mechanical deformation derived from heterostructure lattice mismatch under spontaneous and piezoelectric polarization effects. From these results, mean values in QDs and barrier regions of charge carriers’ electric potentials and effective masses for the conduction band (CB and three valence sub-bands for each direction are evaluated. For the minibands’ investigation, the single-particle time-independent Schrödinger equation in effective mass approximation is decoupled in three directions and resolved using the one-dimensional (1D Kronig–Penney model. The built-in electric field is also considered along the polar axis direction, obtaining Wannier–Stark ladders. Then, theinterminiband absorption coefficient in thermal equilibrium for transverse electric (TE and magnetic (TM incident light polarization is calculated using Fermi’s golden rule implementation based on a numerical integration into the first Brillouin zone. For more detailed results, an absorption coefficient component related to superlattice free excitons is also introduced. Finally, some simulation results, observations and comments are given.
Anisotropic intrinsic spin Hall effect in quantum wires
International Nuclear Information System (INIS)
Cummings, A W; Akis, R; Ferry, D K
2011-01-01
We use numerical simulations to investigate the spin Hall effect in quantum wires in the presence of both Rashba and Dresselhaus spin-orbit coupling. We find that the intrinsic spin Hall effect is highly anisotropic with respect to the orientation of the wire, and that the nature of this anisotropy depends strongly on the electron density and the relative strengths of the Rashba and Dresselhaus spin-orbit couplings. In particular, at low densities, when only one subband of the quantum wire is occupied, the spin Hall effect is strongest for electron momentum along the [1-bar 10] axis, which is the opposite of what is expected for the purely 2D case. In addition, when more than one subband is occupied, the strength and anisotropy of the spin Hall effect can vary greatly over relatively small changes in electron density, which makes it difficult to predict which wire orientation will maximize the strength of the spin Hall effect. These results help to illuminate the role of quantum confinement in spin-orbit-coupled systems, and can serve as a guide for future experimental work on the use of quantum wires for spin-Hall-based spintronic applications. (paper)
The Quantum Socket: Wiring for Superconducting Qubits - Part 1
McConkey, T. G.; Bejanin, J. H.; Rinehart, J. R.; Bateman, J. D.; Earnest, C. T.; McRae, C. H.; Rohanizadegan, Y.; Shiri, D.; Mariantoni, M.; Penava, B.; Breul, P.; Royak, S.; Zapatka, M.; Fowler, A. G.
Quantum systems with ten superconducting quantum bits (qubits) have been realized, making it possible to show basic quantum error correction (QEC) algorithms. However, a truly scalable architecture has not been developed yet. QEC requires a two-dimensional array of qubits, restricting any interconnection to external classical systems to the third axis. In this talk, we introduce an interconnect solution for solid-state qubits: The quantum socket. The quantum socket employs three-dimensional wires and makes it possible to connect classical electronics with quantum circuits more densely and accurately than methods based on wire bonding. The three-dimensional wires are based on spring-loaded pins engineered to insure compatibility with quantum computing applications. Extensive design work and machining was required, with focus on material quality to prevent magnetic impurities. Microwave simulations were undertaken to optimize the design, focusing on the interface between the micro-connector and an on-chip coplanar waveguide pad. Simulations revealed good performance from DC to 10 GHz and were later confirmed against experimental measurements.
International Nuclear Information System (INIS)
Sakly, A.; Safta, N.; Mejri, H.; Lamine, A. Ben
2011-01-01
Research highlights: → This paper is dedicated to structures based on Cd 1-x Zn x S. - Abstract: The present work reports on a theoretical investigation of superlattices based on Cd 1-x Zn x S quantum dots embedded in an insulating material. The system to model is assumed to be a series of flattened cylindrical quantum dots with a finite barrier at the boundary and is studied using a sinusoidal potential. The electronic states of both Γ 1 - (ground) and Γ 2 - (first excited) minibands have been computed as a function of inter-quantum dot separation and Zn composition. An analysis of the results shows that the widths of Γ 1 - and Γ 2 - minibands decrease as the superlattice period and Zn content increase separately. Moreover, the sinusoidal shape of the confining potential accounts for the coupling between quantum dots quantitatively less than the Kronig-Penney potential model.
Correlated electron phenomena in ultra-low disorder quantum wires
International Nuclear Information System (INIS)
Reilly, D.J.; Facer, G.R.; Dzurak, A.S.; Kane, B.E.; Clark, R.G.; Lumpkin, N.E.
1999-01-01
Full text: Quantum point contacts in the lowest disorder HEMTs display structure at 0.7 x 2e 2 /h, which cannot be interpreted within a single particle Landauer model. This structure has been attributed to a spontaneous spin polarisation at zero B field. We have developed novel GaAs/AlGaAs enhancement mode FETs, which avoid the random impurity potential present in conventional MODFET devices by using epitaxially grown gates to produce ultra-low-disorder QPCs and quantum wires using electron beam lithography. The ballistic mean free path within these devices exceeds 160 μm 2 . Quantum wires of 5 μm in length show up to 15 conductance plateaux, indicating that these may be the lowest-disorder quantum wires fabricated using conventional surface patterning techniques. These structures are ideal for the study of correlation effects in QPCs and quantum wires as a function of electron density. Our data provides strong evidence that correlation effects are enhanced as the length of the 1D region is increased and also that additional structure moves close to 0.5 x 2e 2 /h, the value expected for an ideal spin-split 1D level
Quantum logic gates based on coherent electron transport in quantum wires.
Bertoni, A; Bordone, P; Brunetti, R; Jacoboni, C; Reggiani, S
2000-06-19
It is shown that the universal set of quantum logic gates can be realized using solid-state quantum bits based on coherent electron transport in quantum wires. The elementary quantum bits are realized with a proper design of two quantum wires coupled through a potential barrier. Numerical simulations show that (a) a proper design of the coupling barrier allows one to realize any one-qbit rotation and (b) Coulomb interaction between two qbits of this kind allows the implementation of the CNOT gate. These systems are based on a mature technology and seem to be integrable with conventional electronics.
Gap asymptotics in a weakly bent leaky quantum wire
Czech Academy of Sciences Publication Activity Database
Exner, Pavel; Kondej, S.
2015-01-01
Roč. 48, č. 49 (2015), s. 495301 ISSN 1751-8113 R&D Projects: GA ČR(CZ) GA14-06818S Institutional support: RVO:61389005 Keywords : singular Schroedinger operators * delta interaction * leaky quantum wires * weak perturbation * asymptotic expansion Subject RIV: BE - Theoretical Physics Impact factor: 1.933, year: 2015
International Nuclear Information System (INIS)
Ramírez-Porras, A.; García, O.; Vargas, C.; Corrales, A.; Solís, J.D.
2015-01-01
Highlights: • PL spectra of porous silicon samples have been studied using a stochastic model. • This model can deconvolute PL spectra into three components. • Quantum dots, quantum wires and localized states have been identified. • Nanostructure diameters are in the range from 2.2 nm to 4.0 nm. • Contributions from quantum wires are small compared to the others. - Abstract: Nanocrystallites of Silicon have been produced by electrochemical etching of crystal wafers. The obtained samples show photoluminescence in the red band of the visible spectrum when illuminated by ultraviolet light. The photoluminescence spectra can be deconvolved into three components according to a stochastic quantum confinement model: one band coming from Nanocrystalline dots, or quantum dots, one from Nanocrystalline wires, or quantum wires, and one from the presence of localized surface states related to silicon oxide. The results fit well within other published models
Energy Technology Data Exchange (ETDEWEB)
Ramírez-Porras, A., E-mail: aramirez@fisica.ucr.ac.cr [Centro de Investigación en Ciencia e Ingeniería de Materiales (CICIMA), Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); García, O. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Química, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Vargas, C. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Corrales, A. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Química, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Solís, J.D. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica)
2015-08-30
Highlights: • PL spectra of porous silicon samples have been studied using a stochastic model. • This model can deconvolute PL spectra into three components. • Quantum dots, quantum wires and localized states have been identified. • Nanostructure diameters are in the range from 2.2 nm to 4.0 nm. • Contributions from quantum wires are small compared to the others. - Abstract: Nanocrystallites of Silicon have been produced by electrochemical etching of crystal wafers. The obtained samples show photoluminescence in the red band of the visible spectrum when illuminated by ultraviolet light. The photoluminescence spectra can be deconvolved into three components according to a stochastic quantum confinement model: one band coming from Nanocrystalline dots, or quantum dots, one from Nanocrystalline wires, or quantum wires, and one from the presence of localized surface states related to silicon oxide. The results fit well within other published models.
Steering of quantum waves: Demonstration of Y-junction transistors using InAs quantum wires
Jones, Gregory M.; Qin, Jie; Yang, Chia-Hung; Yang, Ming-Jey
2005-06-01
In this paper we demonstrate using an InAs quantum wire Y-branch switch that the electron wave can be switched to exit from the two drains by a lateral gate bias. The gating modifies the electron wave functions as well as their interference pattern, causing the anti-correlated, oscillatory transconductances. Our result suggests a new transistor function in a multiple-lead ballistic quantum wire system.
International Nuclear Information System (INIS)
Gvozdikov, V M; Taut, M
2009-01-01
We report on analytical and numerical studies of the magnetic quantum oscillations of the diagonal conductivity σ xx in a two-dimensional conductor with a weak square superlattice modulation under conditions of the integer quantum Hall (IQHE) effect. The quantum Hall effect in such a system differs from the conventional IQHE, in which the finite width of the Landau bands is due to disorder only. The superlattice modulation potential yields a fractal splitting of the Landau levels into Hofstadter minibands. For rational flux through a unit cell, the minibands have a finite width and intrinsic dispersion relations. We consider a regime, now accessible experimentally, in which disorder does not wash out the fractal internal gap structure of the Landau bands completely. We found the following distinctions from the conventional IQHE produced by the superlattice: (i) the peaks in diagonal conductivity are split due to the Hofstadter miniband structure of Landau bands; (ii) the number of split peaks in the bunch, their positions and heights depend irregularly on the magnetic field and the Fermi energy; (iii) the gaps between the split Landau bands (and related quantum Hall plateaus) become narrower with the superlattice modulation than without it.
Raman study of InAs/InP quantum wires
Angelova, T.; Cros, A.; Cantarero, A.; Fuster, D.; González, Y.; González, L.
2007-04-01
We present a Raman study of the vibrational modes in InAs/InP (001) quantum wires. The energy of the observed phonon modes evidences the confinement properties of the wires, their strain anisotropy and the effect of atomic intermixing. Resonance effects in confined and interface phonons are discussed for excitation in the vicinity of the E1 critical point. The observed vibrations and their variation with sample characteristics are in agreement with the conclusions of previous structural and optical characterization performed in the same samples.
X-ray reciprocal space mapping of GaAs.AIAs quantum wires and quantum dots
Darhuber, A.A.; Koppensteiner, E.; Bauer, G.; Wang, P.D.; Song, Y.P.; Sotomayor Torres, C.M.; Holland, M.C.
1995-01-01
Periodic arrays of 150 and 175 nm-wide GaAs–AlAs quantum wires and quantum dots were investigated, fabricated by electron beam lithography, and SiCl4/O2 reactive ion etching, by means of reciprocal space mapping using triple axis x-ray diffractometry. From the x-ray data the lateral periodicity of
Determination of the strain status of GaAs/AlAs quantum wires and quantum dots
Darhuber, A.A.; Bauer, G.; Wang, P.D.; Song, Y.P.; Sotomayor Torres, C.M.; Holland, M.C.
1995-01-01
We have investigated periodic arrays of 150 and 175 nm wide GaAs-AlAs quantum wires and quantum dots, fabricated by electron beam lithography and SiCI4/O2 reactive ion etching, by means of reciprocal space mapping using triple axis x-ray diffractometry (TAD). The reciprocal space maps reveal that
Electron energy spectrum in core-shell elliptic quantum wire
Directory of Open Access Journals (Sweden)
V.Holovatsky
2007-01-01
Full Text Available The electron energy spectrum in core-shell elliptic quantum wire and elliptic semiconductor nanotubes are investigated within the effective mass approximation. The solution of Schrodinger equation based on the Mathieu functions is obtained in elliptic coordinates. The dependencies of the electron size quantization spectrum on the size and shape of the core-shell nanowire and nanotube are calculated. It is shown that the ellipticity of a quantum wire leads to break of degeneration of quasiparticle energy spectrum. The dependences of the energy of odd and even electron states on the ratio between semiaxes are of a nonmonotonous character. The anticrosing effects are observed at the dependencies of electron energy spectrum on the transversal size of the core-shell nanowire.
Dissipation in a Quantum Wire: Fact and Fantasy
International Nuclear Information System (INIS)
Das, Mukunda P.; Green, Frederick
2008-01-01
Where, and how, does energy dissipation of electrical energy take place in a ballistic wire? Fully two decades after the advent of the transmissive phenomenology of electrical conductance, this deceptively simple query remains unanswered. We revisit the quantum kinetic basis of dissipation and show its power to give a definitive answer to our query. Dissipation leaves a clear, quantitative trace in the non-equilibrium current noise of a quantum point contact; this signature has already been observed in the laboratory. We then highlight the current state of accepted understandings in the light of well-known yet seemingly contradictory measurements. The physics of mesoscopic transport rests not in coherent carrier transmission through a perfect and dissipationless metallic channel, but explicitly in their dissipative inelastic scattering at the wire's interfaces and adjacent macroscopic leads.
Quantum oscillations of conductivity in bismuth wires
International Nuclear Information System (INIS)
Condrea, Elena
2011-01-01
Measurements of the resistance of bismuth nanowires with several diameters and different quality reveal oscillations on the dependence of resistance under uniaxial strain at T = 4.2 K. Amplitude of oscillations is significant (38 %) at helium temperature and becomes smearing at T = 77 K. Observed oscillations originate from quantum size effect. A simple evaluation of period of oscillations allows us to identify the groups of carriers involved in transport. Calculated periods of 42.2 and 25.9 nm satisfy approximately the ratio 2:1 for two experimentally observed sets of oscillations from light and heavy electrons.
International Nuclear Information System (INIS)
Petrosyan, Lyudvig S
2016-01-01
We study coherent transport in a system of periodic linear chain of quantum dots situated between two parallel quantum wires. We show that the resonant-tunneling conductance between the wires exhibits a Rabi splitting of the resonance peak as a function of Fermi energy in the wires. This effect is an electron transport analogue of the Rabi splitting in optical spectra of two interacting systems. The conductance peak splitting originates from the anticrossing of Bloch bands in a periodic system that is caused by a strong coupling between the electron states in the quantum dot chain and quantum wires. (paper)
Localized end states in density modulated quantum wires and rings.
Gangadharaiah, Suhas; Trifunovic, Luka; Loss, Daniel
2012-03-30
We study finite quantum wires and rings in the presence of a charge-density wave gap induced by a periodic modulation of the chemical potential. We show that the Tamm-Shockley bound states emerging at the ends of the wire are stable against weak disorder and interactions, for discrete open chains and for continuum systems. The low-energy physics can be mapped onto the Jackiw-Rebbi equations describing massive Dirac fermions and bound end states. We treat interactions via the continuum model and show that they increase the charge gap and further localize the end states. The electrons placed in the two localized states on the opposite ends of the wire can interact via exchange interactions and this setup can be used as a double quantum dot hosting spin qubits. The existence of these states could be experimentally detected through the presence of an unusual 4π Aharonov-Bohm periodicity in the spectrum and persistent current as a function of the external flux.
Optical properties of InAs/GaAs quantum dot superlattice structures
Imran, Ali; Jiang, Jianliang; Eric, Deborah; Zahid, M. Noaman; Yousaf, M.; Shah, Z. H.
2018-06-01
Quantum dot (QD) structure has potential applications in modern highly efficient optoelectronic devices due to their band-tuning. The device dimensions have been miniatured with increased efficiencies by virtue of this discovery. In this research, we have presented modified analytical and simulation results of InAs/GaAs QD superlattice (QDSL). We have applied tight binding model for the investigation of ground state energies using timeindependent Schrödinger equation (SE) with effective mass approximation. It has been investigated that the electron energies are confined due to wave function delocalization in closely coupled QD structures. The minimum ground state energy can be obtained by increasing the periodicity and decreasing the barrier layer thickness. We have calculated electronics and optical properties which includes ground state energies, transition energies, density of states (DOS), absorption coefficient and refractive index, which can be tuned by structure modification. In our results, the minimum ground state energy of QDSL is achieved to be 0.25 eV with a maximum period of 10 QDs. The minimum band to band and band to continuum transition energies are 63 meV and 130 meV with 2 nm barrier layer thickness respectively. The absorption coefficient of our proposed QDSL model is found to be maximum 1.2 × 104 cm-1 and can be used for highly sensitive infrared detector and high efficiency solar cells.
Quantum efficiency investigations of type-II InAs/GaSb midwave infrared superlattice photodetectors
Energy Technology Data Exchange (ETDEWEB)
Giard, E., E-mail: edouard.giard@onera.fr; Ribet-Mohamed, I.; Jaeck, J.; Viale, T.; Haïdar, R. [ONERA, DOTA, Chemin de la Hunière, 91761 Palaiseau Cedex (France); Taalat, R.; Delmas, M.; Rodriguez, J.-B.; Christol, P. [Institut d' Electronique du Sud, UMR-CNRS 5214, Université Montpellier 2, Place Eugène Bataillon, 34095 Montpellier Cedex 5 (France); Steveler, E.; Bardou, N. [Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Route de Nozay, 91460 Marcoussis (France); Boulard, F. [CEA, LETI, MINATEC Campus, 17 Avenue des martyrs, 38054 Grenoble (France)
2014-07-28
We present in this paper a comparison between different type-II InAs/GaSb superlattice (T2SL) photodiodes and focal plane array (FPA) in the mid-wavelength infrared domain to understand which phenomenon drives the performances of the T2SL structure in terms of quantum efficiency (QE). Our measurements on test photodiodes suggest low minority carrier diffusion length in the “InAs-rich” design, which penalizes carriers' collection in this structure for low bias voltage and front side illumination. This analysis is completed by a comparison of the experimental data with a fully analytic model, which allows to infer a hole diffusion length shorter than 100 nm. In addition, measurements on a FPA with backside illumination are finally presented. Results show an average QE in the 3–4.7 μm window equal to 42% for U{sub bias} = −0.1 V, 77 K operating temperature and no anti-reflection coating. These measurements, completed by modulation transfer function and noise measurements, reveal that the InAs-rich design, despite a low hole diffusion length, is promising for high performance infrared imaging applications.
The Quantum Socket: Wiring for Superconducting Qubits - Part 3
Mariantoni, M.; Bejianin, J. H.; McConkey, T. G.; Rinehart, J. R.; Bateman, J. D.; Earnest, C. T.; McRae, C. H.; Rohanizadegan, Y.; Shiri, D.; Penava, B.; Breul, P.; Royak, S.; Zapatka, M.; Fowler, A. G.
The implementation of a quantum computer requires quantum error correction codes, which allow to correct errors occurring on physical quantum bits (qubits). Ensemble of physical qubits will be grouped to form a logical qubit with a lower error rate. Reaching low error rates will necessitate a large number of physical qubits. Thus, a scalable qubit architecture must be developed. Superconducting qubits have been used to realize error correction. However, a truly scalable qubit architecture has yet to be demonstrated. A critical step towards scalability is the realization of a wiring method that allows to address qubits densely and accurately. A quantum socket that serves this purpose has been designed and tested at microwave frequencies. In this talk, we show results where the socket is used at millikelvin temperatures to measure an on-chip superconducting resonator. The control electronics is another fundamental element for scalability. We will present a proposal based on the quantum socket to interconnect a classical control hardware to a superconducting qubit hardware, where both are operated at millikelvin temperatures.
Magnetoconductivity of quantum wires with elastic and inelastic scattering
DEFF Research Database (Denmark)
Bruus, Henrik; Flensberg, Karsten; Smith
1993-01-01
We use a Boltzmann equation to determine the magnetoconductivity of quantum wires. The presence of a confining potential in addtion to the magnetic field removes the degeneracy of the Landau levels and allows one to associate a group velocity with each single-particle state. The distribution...... function describing the occupation of these single-particle states satisfies a Boltzmann equation, which may be solved exactly in the case of impurity scattering. In the case where the electrons scatter against both phonons and impurities we solve numerically—and in certain limits analytically—the integral...
International Nuclear Information System (INIS)
Sakly, A.; Safta, N.; Mejri, H.; Lamine, A. Ben
2009-01-01
This work reports on a theoretical study of superlattices based on Cd 1-x Zn x S quantum dots embedded in an insulating material. We show, in particular, how this system can be assumed to a series of flattened cylindrical quantum dots with a finite barrier height at the boundary. In this paper, are also reviewed the approximations needed to calculate the band edges of the Cd 1-x Zn x S superlattices with use of the Kronig-Penney model. The electronic states and the electron effective masses of both Γ 1 - and Γ 2 -minibands have been computed as a function of zinc composition for different inter-quantum dot separations. As is found, the CdS system is appropriate to give rise a superlattice behavior for conduction electrons in a relatively large range of inter-sheet separations. An attempt to explain the electron band parameters calculated will be presented.
Interaction and Dephasing of Excitons in ZnSe Quantum Wires
DEFF Research Database (Denmark)
Wagner, Hans Peter; Langbein, Wolfgang; Hvam, Jørn Märcher
1999-01-01
We study the coherent formation of biexcitons in wet-etched ZnSe quantum wires of lateral sizes down to 23 nm by transient degenerate four-wave mixing. We observe an increase of the biexciton binding energy with decreasing wire width reaching 30% energy enhancement in the smallest wire structure...
Quantum Phase Transition and Entanglement in Topological Quantum Wires.
Cho, Jaeyoon; Kim, Kun Woo
2017-06-05
We investigate the quantum phase transition of the Su-Schrieffer-Heeger (SSH) model by inspecting the two-site entanglements in the ground state. It is shown that the topological phase transition of the SSH model is signified by a nonanalyticity of local entanglement, which becomes discontinuous for finite even system sizes, and that this nonanalyticity has a topological origin. Such a peculiar singularity has a universal nature in one-dimensional topological phase transitions of noninteracting fermions. We make this clearer by pointing out that an analogous quantity in the Kitaev chain exhibiting the identical nonanalyticity is the local electron density. As a byproduct, we show that there exists a different type of phase transition, whereby the pattern of the two-site entanglements undergoes a sudden change. This transition is characterised solely by quantum information theory and does not accompany the closure of the spectral gap. We analyse the scaling behaviours of the entanglement in the vicinities of the transition points.
Magnetic field effects on the quantum wire energy spectrum and Green's function
International Nuclear Information System (INIS)
Morgenstern Horing, Norman J.
2010-01-01
We analyze the energy spectrum and propagation of electrons in a quantum wire on a 2D host medium in a normal magnetic field, representing the wire by a 1D Dirac delta function potential which would support just a single subband state in the absence of the magnetic field. The associated Schroedinger Green's function for the quantum wire is derived in closed form in terms of known functions and the Landau quantized subband energy spectrum is examined.
Superlattices in thermoelectric applications
International Nuclear Information System (INIS)
Sofo, J.O.; Mahan, G.D.; Tennessee Univ., Knoxville, TN
1994-08-01
The electrical conductivity, thermopower and the electronic contribution to the thermal conductivity of a superlattice, are calculated with the electric field and the thermal gradient applied parallel to the interfaces. Tunneling between quantum wells is included. The broadening of the lowest subband when the period of the superlattice is decreased produces a reduction of the thermoelectric figure of merit. However, we found that a moderate increase of the figure of merit may be expected for intermediate values of the period, due to the enhancement of the density of states produced by the superlattice structure
Hayton, D. J.; Khudchencko, A.; Pavelyev, D. G.; Hovenier, J. N.; Baryshev, A.; Gao, J. R.; Kao, T. Y.; Hu, Q.; Reno, J. L.; Vaks, V.
2013-01-01
We report on the phase locking of a 3.4 THz third-order distributed feedback quantum cascade laser (QCL) using a room temperature GaAs/AlAs superlattice diode as both a frequency multiplier and an internal harmonic mixer. A signal-to-noise level of 60 dB is observed in the intermediate frequency
Hayton, D.J.; Khudchenko, A.; Pavelyev, D.G.; Hovenier, J.N.; Baryshev, A.; Gao, J.R.; Kao, T.Y.; Hu, Q.; Reno, J.L.; Vaks, V.
2013-01-01
We report on the phase locking of a 3.4 THz third-order distributed feedback quantum cascade laser (QCL) using a room temperature GaAs/AlAs superlattice diode as both a frequency multiplier and an internal harmonic mixer. A signal-to-noise level of 60?dB is observed in the intermediate frequency
Self-organised fractional quantisation in a hole quantum wire
Gul, Y.; Holmes, S. N.; Myronov, M.; Kumar, S.; Pepper, M.
2018-03-01
We have investigated hole transport in quantum wires formed by electrostatic confinement in strained germanium two-dimensional layers. The ballistic conductance characteristics show the regular staircase of quantum levels with plateaux at n2e 2/h, where n is an integer, e is the fundamental unit of charge and h is Planck’s constant. However as the carrier concentration is reduced, the quantised levels show a behaviour that is indicative of the formation of a zig-zag structure and new quantised plateaux appear at low temperatures. In units of 2e 2/h the new quantised levels correspond to values of n = 1/4 reducing to 1/8 in the presence of a strong parallel magnetic field which lifts the spin degeneracy but does not quantise the wavefunction. A further plateau is observed corresponding to n = 1/32 which does not change in the presence of a parallel magnetic field. These values indicate that the system is behaving as if charge was fractionalised with values e/2 and e/4, possible mechanisms are discussed.
Negative tunneling magneto-resistance in quantum wires with strong spin-orbit coupling.
Han, Seungju; Serra, Llorenç; Choi, Mahn-Soo
2015-07-01
We consider a two-dimensional magnetic tunnel junction of the FM/I/QW(FM+SO)/I/N structure, where FM, I and QW(FM+SO) stand for a ferromagnet, an insulator and a quantum wire with both magnetic ordering and Rashba spin-orbit (SOC), respectively. The tunneling magneto-resistance (TMR) exhibits strong anisotropy and switches sign as the polarization direction varies relative to the quantum-wire axis, due to interplay among the one-dimensionality, the magnetic ordering, and the strong SOC of the quantum wire.
Influence of magnetic moment formation on the conductance of coupled quantum wires
International Nuclear Information System (INIS)
Puller, V I; Mourokh, L G; Bird, J P; Ochiai, Y
2005-01-01
In this paper, we develop a model for the resonant interaction between a pair of coupled quantum wires, under conditions where self-consistent effects lead to the formation of a local magnetic moment in one of the wires. Our analysis is motivated by the experimental results of Morimoto et al (2003 Appl. Phys. Lett. 82 3952), who showed that the conductance of one of the quantum wires exhibits a resonant peak at low temperatures, whenever the other wire is swept into the regime where local-moment formation is expected. In order to account for these observations, we develop a theoretical model for the inter-wire interaction that calculated the transmission properties of one (the fixed) wire when the device potential is modified by the presence of an extra scattering term, arising from the presence of the local moment in the swept wire. To determine the transmission coefficients in this system, we derive equations describing the dynamics of electrons in the swept and fixed wires of the coupled-wire geometry. Our analysis clearly shows that the observation of a resonant peak in the conductance of the fixed wire is correlated to the appearance of additional structure (near 0.75 x 2e 2 /h or 0.25 x 2e 2 /h) in the conductance of the swept wire, in agreement with the experimental results of Morimoto et al
Very Efficient Single-Photon Sources Based on Quantum Dots in Photonic Wires
DEFF Research Database (Denmark)
Gerard, Jean-Michel; Claudon, Julien; Bleuse, Joel
2014-01-01
. By placing a tip-shaped or trumpet-like tapering at the output end of the wire, a highly directional Gaussian far-field emission pattern is obtained. More generally, a photonic wire containing a quantum dot appears as an attractive template to explore and exploit in a solid-state system the unique optical...
Externally controlled local magnetic field in a conducting mesoscopic ring coupled to a quantum wire
International Nuclear Information System (INIS)
Maiti, Santanu K.
2015-01-01
In the present work, the possibility of regulating local magnetic field in a quantum ring is investigated theoretically. The ring is coupled to a quantum wire and subjected to an in-plane electric field. Under a finite bias voltage across the wire a net circulating current is established in the ring which produces a strong magnetic field at its centre. This magnetic field can be tuned externally in a wide range by regulating the in-plane electric field, and thus, our present system can be utilized to control magnetic field at a specific region. The feasibility of this quantum system in designing spin-based quantum devices is also analyzed
Ultra-Low Power Optical Transistor Using a Single Quantum Dot Embedded in a Photonic Wire
DEFF Research Database (Denmark)
Nguyen, H.A.; Grange, T.; Malik, N.S.
2017-01-01
Using a single InAs quantum dot embedded in a GaAs photonic wire, we realize a giant non-linearity between two optical modes to experimentally demonstrate an all-optical transistor triggered by 10 photons.......Using a single InAs quantum dot embedded in a GaAs photonic wire, we realize a giant non-linearity between two optical modes to experimentally demonstrate an all-optical transistor triggered by 10 photons....
Keizer, J.G.; Jo, M.; Mano, T.; Noda, T.; Sakoda, K.; Koenraad, P.M.
2011-01-01
We report the structural analysis at the atomic scale of GaAs/AlGaAs quantum wires and quantum dots grown by droplet epitaxy on a (311)A-oriented substrate. The shape, interfaces, and composition of these nanostructures and their surrounding matrix are investigated. We show that quantum wires can be
Quantum-well exciton polariton emission from multi-quantum-well wire structures
Kohl, M.; Heitmann, D.; Grambow, P.; Ploog, K.
The radiative decay of quantum-well exciton (QWE) polaritons in microstructured Al0.3Ga0.7As - GaAs multi-quantum wells (MQW) has been studied by photoluminescence spectroscopy. Periodic wire structures with lateral periodicities a = 250-500 nm and lateral widths t = 100-200 nm have been fabricated by plasma etching. The thickness of the QWs was 13 nm. In the QW wire samples the free-exciton photoluminescence was strongly reduced and the QWE polariton emission was observed as a maximum peaked at a 3 meV higher energy than the free QWE transition. In samples which had only a microstructured cladding layer, the free-exciton photoluminescence was dominant in the spectrum and the QWE polariton emission was observed as a shoulder on the high-energy side of the free QWE transition. In addition, two transitions at the low energy side of the free QWE photoluminescence were present in the microstructured samples, which were related to etching induced states.
STM tunneling through a quantum wire with a side-attached impurity
International Nuclear Information System (INIS)
Kwapinski, T.; Krawiec, M.; Jalochowski, M.
2008-01-01
The STM tunneling through a quantum wire (QW) with a side-attached impurity (atom, island) is investigated using a tight-binding model and the non-equilibrium Keldysh Green function method. The impurity can be coupled to one or more QW atoms. The presence of the impurity strongly modifies the local density of states of the wire atoms, thus influences the STM tunneling through all the wire atoms. The transport properties of the impurity itself are also investigated mainly as a function of the wire length and the way it is coupled to the wire. It is shown that the properties of the impurity itself and the way it is coupled to the wire strongly influence the STM tunneling, the density of states and differential conductance
Chang, I-Ya; Kim, DaeGwi; Hyeon-Deuk, Kim
2017-09-20
The possibility of precisely manipulating interior nanospace, which can be adjusted by ligand-attaching down to the subnanometer regime, in a hyperstructured quantum dot (QD) superlattice (QDSL) induces a new kind of collective resonant coupling among QDs and opens up new opportunities for developing advanced optoelectric and photovoltaic devices. Here, we report the first real-time dynamics simulations of the multiple exciton generation (MEG) in one-, two-, and three-dimensional (1D, 2D, and 3D) hyperstructured H-passivated Si QDSLs, accounting for thermally fluctuating band energies and phonon dynamics obtained by finite-temperature ab initio molecular dynamics simulations. We computationally demonstrated that the MEG was significantly accelerated, especially in the 3D QDSL compared to the 1D and 2D QDSLs. The MEG acceleration in the 3D QDSL was almost 1.9 times the isolated QD case. The dimension-dependent MEG acceleration was attributed not only to the static density of states but also to the dynamical electron-phonon couplings depending on the dimensionality of the hyperstructured QDSL, which is effectively controlled by the interior nanospace. Such dimension-dependent modifications originated from the short-range quantum resonance among component QDs and were intrinsic to the hyperstructured QDSL. We propose that photoexcited dynamics including the MEG process can be effectively controlled by only manipulating the interior nanospace of the hyperstructured QDSL without changing component QD size, shape, compositions, ligand, etc.
International Nuclear Information System (INIS)
Huang, S.H.; Chen Zhanghai; Wang, F.Z.; Shen, S.C.; Tan, H.H.; Fu, L.; Fraser, M.; Jagadish, C.
2006-01-01
A single Al 0.5 Ga 0.5 As/GaAs V-grooved quantum wire modified by selective ion implantation and rapid thermal annealing was investigated by using spatially resolved micro-photoluminescence spectroscopy and magneto-resistance measurements. The results of spatially resolved photoluminescence indicate that the ion-implantation-induced quantum well intermixing significantly raises the electronic sub-band energies in the side quantum wells (SQWs) and vertical quantum wells, and a more efficient accumulation of electrons in the quantum wires is achieved. Processes of real space carrier transfer from the SQW to the quantum wire was experimentally observed, and showed the blocking effect of carrier transfer due to the existence of the necking quantum well region. Furthermore, magneto-transport investigation on the ion-implanted quantum wire samples shows the quasi-one-dimensional intrinsic motion of electrons, which is important for the design and the optimization of one-dimensional electronic devices
Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires
International Nuclear Information System (INIS)
Donchev, V; Ivanov, T S; Borisov, K; Angelova, T; Cros, A; Cantarero, A; Fuster, D; Shtinkov, N; Gonzalez, Y; Gonzalez, L
2010-01-01
The optical properties of InAs/InP multi-layer quantum wire (QWR) structures of various spacer thicknesses have been investigated by means of room temperature surface photovoltage and photoluminescence spectroscopy. Combined with empirical tight binding calculations, the spectra have revealed transitions assigned to QWR families with heights equal to integer number of 5, 6 and 7 monolayers. From the comparison of the experimental and theoretical results the atomic concentration of phosphorus in the wires has been estimated.
Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires
Donchev, V.; Ivanov, T. S.; Angelova, T.; Cros, A.; Cantarero, A.; Shtinkov, N.; Borisov, K.; Fuster, D.; González, Y.; González, L.
2010-02-01
The optical properties of InAs/InP multi-layer quantum wire (QWR) structures of various spacer thicknesses have been investigated by means of room temperature surface photovoltage and photoluminescence spectroscopy. Combined with empirical tight binding calculations, the spectra have revealed transitions assigned to QWR families with heights equal to integer number of 5, 6 and 7 monolayers. From the comparison of the experimental and theoretical results the atomic concentration of phosphorus in the wires has been estimated.
Magnetic Anticrossing of 1D Subbands in Coupled Ballistic Double Quantum Wires
International Nuclear Information System (INIS)
Blount, Mark A.; Moon, Jeong-Sun; Simmons, Jerry A.; Lyo, Sungkwun K.; Wendt, Joel R.; Reno, John L.
2000-01-01
We study the low-temperature in-plane magnetoconductance of vertically coupled double quantum wires. Using a novel flip-chip technique, the wires are defined by two pairs of mutually aligned split gates on opposite sides of a s 1 micron thick AlGaAs/GaAs double quantum well heterostructure. We observe quantized conductance steps due to each quantum well and demonstrate independent control of each ID wire. A broad dip in the magnetoconductance at -6 T is observed when a magnetic field is applied perpendicular to both the current and growth directions. This conductance dip is observed only when 1D subbands are populated in both the top and bottom constrictions. This data is consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field due to the formation of an anticrossing in each pair of 1D subbands
Quantum wire spectroscopy and epitaxial growth velocities in InGaAs-InP heterostructures
International Nuclear Information System (INIS)
Worlock, J.M.; Peeters, F.M.; Cox, H.M.; Morais, P.C.
1990-06-01
We study excitons bound to quantum wires of InGaAs embedded in an InP matrix, where the wires vary from 2.93A angstrom to a.1172A angstrom (one to four monolayers) thick and from 25A angstrom to 250A angstrom wide. We combine spectroscopic data from measurements of photoluminescence with variational calculations of the binding energies of excitons to the wires to deduce the wire widths and thickness. The widths are then related to the growth times to deduce lateral growth velocities in the vapor levitation epitaxial technique. Monolayer growth rates, at ∼ 80A angstrom/sec, are significantly faster than growth rates for the multilayer wires. (author)
One phonon resonant Raman scattering in free-standing quantum wires
International Nuclear Information System (INIS)
Zhao, Xiang-Fu; Liu, Cui-Hong
2007-01-01
The scattering intensity (SI) of a free-standing cylindrical semiconductor quantum wire for an electron resonant Raman scattering (ERRS) process associated with bulk longitudinal optical (LO) phonon modes and surface optical (SO) phonon modes is calculated separately for T=0 K. The Frohlich interaction is considered to illustrate the theory for GaAs and CdS systems. Electron states are confined within a free-standing quantum wire (FSW). Single parabolic conduction and valence bands are assumed. The selection rules are studied. Numerical results and a discussion are also presented for various radii of the cylindrical
Sharma, Akant Sagar; Dhar, S.
2018-02-01
The distribution of strain, developed in zero-dimensional quantum spherical dots and one-dimensional cylindrical quantum wires of an InGaN/GaN system is calculated as functions of radius of the structure and indium mole fraction. The strain shows strong dependence on indium mole fraction at small distances from the center. The strain associated with both the structures is found to decrease exponentially with the increase in dot or cylinder radius and increases linearly with indium content.
Tsai, Yi-Chia; Li, Yiming; Samukawa, Seiji
2017-12-01
In this work, we numerically simulate the silicon (Si)/silicon carbide (SiC) quantum dot superlattice solar cell (SiC-QDSL) with aluminum oxide (Al 2 O 3 -QDSL) passivation. By exploiting the passivation layer of Al 2 O 3 , the high photocurrent and the conversion efficiency can be achieved without losing the effective bandgap. Based on the two-photon transition mechanism in an AM1.5 and a one sun illumination, the simulated short-circuit current (J sc ) of 4.77 mA cm -2 is very close to the experimentally measured 4.75 mA cm -2 , which is higher than those of conventional SiC-QDSLs. Moreover, the efficiency fluctuation caused by the structural variation is less sensitive by using the passivation layer. A high conversion efficiency of 17.4% is thus estimated by adopting the QD's geometry used in the experiment; and, it can be further boosted by applying a hexagonal QD formation with an inter-dot spacing of 0.3 nm.
Tsai, Yi-Chia; Li, Yiming; Samukawa, Seiji
2017-12-01
In this work, we numerically simulate the silicon (Si)/silicon carbide (SiC) quantum dot superlattice solar cell (SiC-QDSL) with aluminum oxide (Al2O3-QDSL) passivation. By exploiting the passivation layer of Al2O3, the high photocurrent and the conversion efficiency can be achieved without losing the effective bandgap. Based on the two-photon transition mechanism in an AM1.5 and a one sun illumination, the simulated short-circuit current (J sc) of 4.77 mA cm-2 is very close to the experimentally measured 4.75 mA cm-2, which is higher than those of conventional SiC-QDSLs. Moreover, the efficiency fluctuation caused by the structural variation is less sensitive by using the passivation layer. A high conversion efficiency of 17.4% is thus estimated by adopting the QD’s geometry used in the experiment; and, it can be further boosted by applying a hexagonal QD formation with an inter-dot spacing of 0.3 nm.
Energy Technology Data Exchange (ETDEWEB)
Ziouche, K., E-mail: katir.ziouche@iemn.univ-lille1.fr, E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Bougrioua, Z., E-mail: katir.ziouche@iemn.univ-lille1.fr, E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Lejeune, P.; Lasri, T.; Leclercq, D. [IEMN, Institute of Electronics, Microelectronics and Nanotechnology, CNRS and Lille 1 University, F-59652 Villeneuve d' Ascq (France); Savelli, G.; Hauser, D.; Michon, P.-M. [CEA, LITEN, Thermoelectricity Laboratory, F-38054 Grenoble (France)
2014-07-28
This paper presents an original integration of polycrystalline SiGe-based quantum dots superlattices (QDSL) into Thermoelectric (TE) planar infrared microsensors (μSIR) fabricated using a CMOS technology. The nanostructuration in QDSL results into a considerably reduced thermal conductivity by a factor up to 10 compared to the one of standard polysilicon layers that are usually used for IR sensor applications. A presentation of several TE layers, QDSL and polysilicon, is given before to describe the fabrication of the thermopile-based sensors. The theoretical values of the sensitivity to irradiance of μSIR can be predicted thanks to an analytical model. These findings are used to interpret the experimental measurements versus the nature of the TE layer exploited in the devices. The use of nanostructured QDSL as the main material in μSIR thermopile has brought a sensitivity improvement of about 28% consistent with theoretical predictions. The impact of QDSL low thermal conductivity is damped by the contribution of the thermal conductivity of all the other sub-layers that build up the device.
Measuring the complex admittance and tunneling rate of a germanium hut wire hole quantum dot
Li, Yan; Li, Shu-Xiao; Gao, Fei; Li, Hai-Ou; Xu, Gang; Wang, Ke; Liu, He; Cao, Gang; Xiao, Ming; Wang, Ting; Zhang, Jian-Jun; Guo, Guo-Ping
2018-05-01
We investigate the microwave reflectometry of an on-chip reflection line cavity coupled to a Ge hut wire hole quantum dot. The amplitude and phase responses of the cavity can be used to measure the complex admittance and evaluate the tunneling rate of the quantum dot, even in the region where transport signal through the quantum dot is too small to be measured by conventional direct transport means. The experimental observations are found to be in good agreement with a theoretical model of the hybrid system based on cavity frequency shift and linewidth shift. Our experimental results take the first step towards fast and sensitive readout of charge and spin states in Ge hut wire hole quantum dot.
Many-body spin related phenomena in ultra-low-disorder quantum wires
International Nuclear Information System (INIS)
Reilly, D.J.; Facer, G.R.; Dzurak, A.S.; Kane, B.E.; Clark, R.G.; Stiles, P.J.; O'Brien, J.L.; Lumpkin, N.E.
2000-01-01
Full text: Zero length quantum wires (or point contacts) exhibit unexplained conductance structure close to 0.7 x 2e 2 /h in the absence of an applied magnetic field. We have studied the density- and temperature-dependent conductance of ultra-low-disorder GaAs AlGaAs quantum wires with nominal lengths l=0 and 2μm, fabricated from structures free of the disorder associated with modulation doping. In a direct comparison we observe structure near 0.7 x 2e 2 /h for l=0 whereas the l = 2μm wires show structure evolving with increasing density to 0.5 x 2e 2 /h in zero magnetic field, the value expected for an ideal spin split sub-band. Our results suggest the dominant mechanism through which electrons interact can be strongly affected by the length of the 1D region
Giant nonlinear interaction between two optical beams via a quantum dot embedded in a photonic wire
DEFF Research Database (Denmark)
Nguyen, H.A.; Grange, T.; Reznychenko, B.
2018-01-01
a tailored photonic environment. Here, we demonstrate a two-mode giant nonlinearity with a single semiconductor quantum dot (QD) embedded in a photonic wire antenna. We exploit two detuned optical transitions associated with the exciton-biexciton QD level scheme. Owing to the broadband waveguide antenna...
Transient four-wave mixing in T-shaped GaAs quantum wires
DEFF Research Database (Denmark)
Langbein, Wolfgang Werner; Gislason, Hannes; Hvam, Jørn Märcher
1999-01-01
The binding energy of excitons and biexcitons and the exciton dephasing in T-shaped GaAs quantum wires is investigated by transient four-wave mixing. The T-shaped structure is fabricated by cleaved-edge overgrowth, and its geometry is engineered to optimize the one-dimensional confinement. In thi...
Superlattice to nanoelectronics
Tsu, Raphael
2005-01-01
Superlattice to Nanoelectronics provides a historical overview of the early work performed by Tsu and Esaki, to orient those who want to enter into this nanoscience. It describes the fundamental concepts and goes on to answer many questions about todays 'Nanoelectronics'. It covers the applications and types of devices which have been produced, many of which are still in use today. This historical perspective is important as a guide to what and how technology and new fundamental ideas are introduced and developed. The author communicates a basic understanding of the physics involved from first principles, whilst adding new depth, using simple mathematics and explanation of the background essentials. Topics covered include * Introductory materials * Superlattice, Bloch oscillations and transport * Tunneling in QWs to QDs * Optical properties: optical transitions, size dependent dielectric constant, capacitance and doping * Quantum devices: New approaches without doping and heterojunctions - quantum confinement...
Thermal conductivity and heat transfer in superlattices
Energy Technology Data Exchange (ETDEWEB)
Chen, G; Neagu, M; Borca-Tasciuc, T
1997-07-01
Understanding the thermal conductivity and heat transfer processes in superlattice structures is critical for the development of thermoelectric materials and devices based on quantum structures. This work reports progress on the modeling of thermal conductivity of superlattice structures. Results from the models established based on the Boltzmann transport equation could explain existing experimental results on the thermal conductivity of semiconductor superlattices in both in plane and cross-plane directions. These results suggest the possibility of engineering the interfaces to further reduce thermal conductivity of superlattice structures.
Effect of Γ-X band mixing on the donor binding energy in a Quantum Wire
Vijaya Shanthi, R.; Jayakumar, K.; Nithiananthi, P.
2015-02-01
To invoke the technological applications of heterostructure semiconductors like Quantum Well (QW), Quantum Well Wire (QWW) and Quantum Dot (QD), it is important to understand the property of impurity energy which is responsible for the peculiar electronic & optical behavior of the Low Dimensional Semiconductor Systems (LDSS). Application of hydrostatic pressure P>35kbar drastically alters the band offsets leading to the crossover of Γ band of the well & X band of the barrier resulting in an indirect transition of the carrier and this effect has been studied experimentally and theoretically in a QW structure. In this paper, we have investigated the effect of Γ-X band mixing due to the application of hydrostatic pressure in a GaAs/AlxGa1-xAs QWW system. The results are presented and discussed for various widths of the wire.
Inelastic Quantum Transport in Superlattices: Success and Failure of the Boltzmann Equation
DEFF Research Database (Denmark)
Wacker, Andreas; Jauho, Antti-Pekka; Rott, Stephan
1999-01-01
the whole held range from linear response to negative differential conductivity. The quantum results are compared with the respective results obtained from a Monte Carlo solution of the Boltzmann equation. Our analysis thus sets the limits of validity for the semiclassical theory in a nonlinear transport...
Intrinsic optical confinement for ultrathin InAsN quantum well superlattices
Energy Technology Data Exchange (ETDEWEB)
Sakri, A.; Robert, C.; Pedesseau, L.; Cornet, C.; Durand, O.; Even, J.; Jancu, J.-M. [Université Europeenne de Bretagne, INSA Rennes,France and CNRS, UMR 6082, Foton, 20 avenues des Buttes de Coësmes, 35708 Rennes (France)
2013-12-04
We study energy-band engineering with InAsN monolayer in GaAs/GaP quantum well structure. A tight-binding calculation indicates that both type I alignment along with direct band-gap behavior can be obtained. We show that the optical transitions are less sensitive to the position of the probe.
Electron Raman scattering in semiconductor quantum wire in an external magnetic field
International Nuclear Information System (INIS)
Betancourt-Riera, Ri; Nieto Jalil, J M; Riera, R; Betancourt-Riera, Re; Rosas, R
2008-01-01
The differential cross-section for an electron Raman scattering process in a semiconductor quantum wire in the presence of an external magnetic field perpendicular to the plane of confinement is calculated. We assume a single parabolic conduction band. The emission spectra for different scattering configurations and the selection rules for the processes are studied. Singularities in the spectra are found and interpreted. The electron Raman scattering studied here can be used to provide direct information about the electron band and subband structure of these confinement systems. The magnetic field distribution is considered constant with value B 0 inside the wire and zero outside
Calculating modes of quantum wire systems using a finite difference technique
Directory of Open Access Journals (Sweden)
T Mardani
2013-03-01
Full Text Available In this paper, the Schrodinger equation for a quantum wire is solved using a finite difference approach. A new aspect in this work is plotting wave function on cross section of rectangular cross-sectional wire in two dimensions, periodically. It is found that the correct eigen energies occur when wave functions have a complete symmetry. If the value of eigen energy has a small increase or decrease in neighborhood of the correct energy the symmetry will be destroyed and aperturbation value at the first of wave function will be observed. In addition, the demand on computer memory varies linearly with the size of the system under investigation.
InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands.
Han, Yu; Li, Qiang; Ng, Kar Wei; Zhu, Si; Lau, Kei May
2018-06-01
We report the growth of vertically stacked InGaAs/InP quantum wires on (001) Si substrates with adjustable room-temperature emission at telecom bands. Based on a self-limiting growth mode in selective area metal-organic chemical vapor deposition, crescent-shaped InGaAs quantum wires with variable dimensions are embedded within InP nano-ridges. With extensive transmission electron microscopy studies, the growth transition and morphology change from quantum wires to ridge quantum wells (QWs) have been revealed. As a result, we are able to decouple the quantum wires from ridge QWs and manipulate their dimensions by scaling the growth time. With minimized lateral dimension and their unique positioning, the InGaAs/InP quantum wires are more immune to dislocations and more efficient in radiative processes, as evidenced by their excellent optical quality at telecom-bands. These promising results thus highlight the potential of combining low-dimensional quantum wire structures with the aspect ratio trapping process for integrating III-V nano-light emitters on mainstream (001) Si substrates.
Gao, Na; Lin, Wei; Chen, Xue; Huang, Kai; Li, Shuping; Li, Jinchai; Chen, Hangyang; Yang, Xu; Ji, Li; Yu, Edward T; Kang, Junyong
2014-12-21
Ultra-short-period (AlN)m/(GaN)n superlattices with tunable well and barrier atomic layer numbers were grown by metal-organic vapour phase epitaxy, and employed to demonstrate narrowband deep ultraviolet photodetection. High-resolution transmission electron microscopy and X-ray reciprocal space mapping confirm that superlattices containing well-defined, coherently strained GaN and AlN layers as thin as two atomic layers (∼ 0.5 nm) were grown. Theoretical and experimental results demonstrate that an optical absorption band as narrow as 9 nm (210 meV) at deep-ultraviolet wavelengths can be produced, and is attributable to interband transitions between quantum states along the [0001] direction in ultrathin GaN atomic layers isolated by AlN barriers. The absorption wavelength can be precisely engineered by adjusting the thickness of the GaN atomic layers because of the quantum confinement effect. These results represent a major advance towards the realization of wavelength selectable and narrowband photodetectors in the deep-ultraviolet region without any additional optical filters.
International Nuclear Information System (INIS)
Fu Xi; Zhou Guanghui
2009-01-01
We investigate theoretically the spin current in a quantum wire with weak Dresselhaus spin-orbit coupling connected to two normal conductors. Both the quantum wire and conductors are described by a hard-wall confining potential. Using the electron wave-functions in the quantum wire and a new definition of spin current, we have calculated the elements of linear spin current density j s,xi T and j s,yi T (i = x, y, z). We find that the elements j T s,xx and j T s,yy have a antisymmetrical relation and the element j T s,yz has the same amount level as j s,xx T and j s,yy T . We also find a net linear spin current density, which has peaks at the center of quantum wire. The net linear spin current can induce a linear electric field, which may imply a way of spin current detection.
Institute of Scientific and Technical Information of China (English)
FU Xi; ZHOU Guang-Hui
2009-01-01
We investigate theoretically the spin current in a quantum wire with weak Dresselhaus spin-orbit coupling connected to two normal conductors.Both the quantum wire and conductors are described by a hard-wall confining potential.Using the electron wave-functions in the quantum wire and a new definition of spin current, we have calculated the elements of linear spin current density jTs,xi and jTs,yi(I = x, y, z).We lind that the elements jTs,xx and jTs,yy have a antisymmetrical relation and the element jTs,yz has the same amount level jTs,xx and jTs,yy.We also find a net linear spin current density, which has peaks at the center of quantum wire.The net linear spin current can induce a linear electric field, which may imply a way of spin current detection.
Anisotropic Formation of Quantum Turbulence Generated by a Vibrating Wire in Superfluid {}4{He}
Yano, H.; Ogawa, K.; Chiba, Y.; Obara, K.; Ishikawa, O.
2017-06-01
To investigate the formation of quantum turbulence in superfluid {}4{He}, we have studied the emission of vortex rings with a ring size of larger than 38 μm in diameter from turbulence generated by a vibrating wire. The emission rate of vortex rings from a turbulent region remains low until the beginning of high-rate emissions, suggesting that some of the vortex lines produced by the wire combine to form a vortex tangle, until an equilibrium is established between the rate of vortex line combination with the tangle and dissociation. The formation times of equilibrium turbulence are proportional to ɛ ^{-1.2} and ɛ ^{-0.6} in the directions perpendicular and parallel to the vibrating direction of the generator, respectively, indicating the anisotropic formation of turbulence. Here, ɛ is the generation power of the turbulence. This power dependence may be associated with the characteristics of quantum turbulence with a constant energy flux.
Quasiparticle properties of a coupled quantum-wire electron-phonon system
DEFF Research Database (Denmark)
Hwang, E. H.; Hu, Ben Yu-Kuang; Sarma, S. Das
1996-01-01
We study leading-order many-body effects of longitudinal-optical phonons on electronic properties of one-dimensional quantum-wire systems. We calculate the quasiparticle properties of a weakly polar one-dimensional electron gas in the presence of both electron-phonon and electron-electron interac......We study leading-order many-body effects of longitudinal-optical phonons on electronic properties of one-dimensional quantum-wire systems. We calculate the quasiparticle properties of a weakly polar one-dimensional electron gas in the presence of both electron-phonon and electron......-electron interactions, The leading-order dynamical screening approximation (GW approximation) is used to obtain the electron self-energy, the quasiparticle spectral function, and the quasiparticle damping rate in our calculation by treating electrons and phonons on an equal footing. Our theory includes effects (within...... theoretical results for quasiparticle properties....
International Nuclear Information System (INIS)
Restrepo, R.L.; Giraldo, E.; Miranda, G.L.; Ospina, W.; Duque, C.A.
2009-01-01
The combined effects of the hydrostatic pressure and in-growth direction applied electric field on the binding energy of hydrogenic shallow-donor impurity states in parallel-coupled-GaAs-Ga 1-x Al x As-quantum-well wires are calculated using a variational procedure within the effective-mass and parabolic-band approximations. Results are obtained for several dimensions of the structure, shallow-donor impurity positions, hydrostatic pressure, and applied electric field. Our results suggest that external inputs such us hydrostatic pressure and in-growth direction electric field are two useful tools in order to modify the binding energy of a donor impurity in parallel-coupled-quantum-well wires.
Nuclear Quantum Effects in H(+) and OH(-) Diffusion along Confined Water Wires.
Rossi, Mariana; Ceriotti, Michele; Manolopoulos, David E
2016-08-04
The diffusion of protons and hydroxide ions along water wires provides an efficient mechanism for charge transport that is exploited by biological membrane channels and shows promise for technological applications such as fuel cells. However, what is lacking for a better control and design of these systems is a thorough theoretical understanding of the diffusion process at the atomic scale. Here we focus on two aspects of this process that are often disregarded because of their high computational cost: the use of first-principles potential energy surfaces and the treatment of the nuclei as quantum particles. We consider proton and hydroxide ions in finite water wires using density functional theory augmented with an apolar cylindrical confining potential. We employ machine learning techniques to identify the charged species, thus obtaining an agnostic definition that takes explicitly into account the delocalization of the charge in the Grotthus-like mechanism. We include nuclear quantum effects (NQEs) through the thermostated ring polymer molecular dynamics method and model finite system size effects by considering Langevin dynamics on the potential of mean force of the charged species, allowing us to extract the same "universal" diffusion coefficient from simulations with different wire sizes. In the classical case, diffusion coefficients depend significantly on the potential energy surface, in particular on how dispersion forces modulate water-water distances. NQEs, however, make the diffusion less sensitive to the underlying potential and geometry of the wire.
International Nuclear Information System (INIS)
Gross, D.; Eisert, J.
2010-01-01
We discuss the notion of quantum computational webs: These are quantum states universal for measurement-based computation, which can be built up from a collection of simple primitives. The primitive elements--reminiscent of building blocks in a construction kit--are (i) one-dimensional states (computational quantum wires) with the power to process one logical qubit and (ii) suitable couplings, which connect the wires to a computationally universal web. All elements are preparable by nearest-neighbor interactions in a single pass, of the kind accessible in a number of physical architectures. We provide a complete classification of qubit wires, a physically well-motivated class of universal resources that can be fully understood. Finally, we sketch possible realizations in superlattices and explore the power of coupling mechanisms based on Ising or exchange interactions.
Quantum interference and manipulation of entanglement in silicon wire waveguide quantum circuits
International Nuclear Information System (INIS)
Bonneau, D; Engin, E; O'Brien, J L; Thompson, M G; Ohira, K; Suzuki, N; Yoshida, H; Iizuka, N; Ezaki, M; Natarajan, C M; Tanner, M G; Hadfield, R H; Dorenbos, S N; Zwiller, V
2012-01-01
Integrated quantum photonic waveguide circuits are a promising approach to realizing future photonic quantum technologies. Here, we present an integrated photonic quantum technology platform utilizing the silicon-on-insulator material system, where quantum interference and the manipulation of quantum states of light are demonstrated in components orders of magnitude smaller than previous implementations. Two-photon quantum interference is presented in a multi-mode interference coupler, and the manipulation of entanglement is demonstrated in a Mach-Zehnder interferometer, opening the way to an all-silicon photonic quantum technology platform. (paper)
International Nuclear Information System (INIS)
Cox, H.M.; Morais, P.C.; Hwang, D.M.; Bastos, P.; Gmitter, T.J.; Nazar, L.; Worlock, J.M.; Yablonovitch, E.; Hummel, S.G.
1988-09-01
A variety of InGaAs/InP quantum structures have been grown by vapor levitation epitaxy (VLE) and investigated by low temperature photoluminescence (PL). Excellent long-range uniformity of QW peak positions across a two-inch diameter wafer is achieved. Monolayer thickness variations in single QW's are used to establish an essentially unambiguous correlation of QW thickness with energy upshift for ultra-thin quantum wells. PL evidence is presented of the growth, for the first time by any technique, of an InGaAs/InP QW of single monolayer thickness (2.93 (angstrom)). Quantum wires were fabricated entirely by VLE as thin as one monolayer and estimated to be three unit cells wide. (author) [pt
The fabrication and characterisation of quantum dots, wires and wire net works
International Nuclear Information System (INIS)
Zhang, Q.
1996-07-01
The work in this thesis includes two aspects as described below: 1. Freshly produced red, yellow and green emitting porous Si have been fabricated and studied by NEXAFS and EXAFS. The emission peaks are at 690, 580 and 520 nm, which almost covers the fall visible range that direct anodization can achieve. The correlation between the co-ordination numbers of the first, second and third Si neighbour shells from Fourier transform fitting of EXAFS and both emission peak energies and optical bandgaps estimated by PLE (photoluminescence excitation dependence) suggests that the nanostructures of the PS are nanowires, rather than nanoclusters. Two types of quantum nanowire with one and one-plus-a-fraction dimensionality are proposed to interpret the correlation. The order factors of the theoretical fits suggest the nanowires of the freshly produced PS have crystalline cores. 2. Strong and stable blue photoluminescence (PL), visible to the naked eye under 0.4 μW of 300 nm and 2.7 μW of 370 nm excitation, has been observed for samples of Si and C clusters embedded in SiO 2 matrices, prepared by rf co-sputtering followed by N 2 annealing at 800 deg C. Firstly for the Si clusters. Si K-edge EXAFS and NEXAFS strongly suggest the existence of Si nanoclusters with crystalline cores in the efficient emitting material. On the other hand for the carbon clusters, silicon, carbon and oxygen K-edge XAFS suggest that 1) the nanoclusters present are C-based materials, 2) the luminescent materials probably involves π bonded carbon. The size distributions of both kinds of the nanoclusters obtained by TEM suggest that a quantum-confined size effect can also apply to the blue PL. The strong blue emission is related with the crystallisation of the nanodots by annealing. The PL excitation dependence is explained by an increase in the conduction band density of states deep in the band, and the formation of a band tail. (author)
International Nuclear Information System (INIS)
Kwo, J.; Hong, M.; McWhan, D.B.; Yafet, Y.; Fleming, R.M.; DiSalvo, F.J.; Waszczak, J.V.; Majkrzak, C.F.; Gibbs, D.; Goldmann, A.I.; Boni, P.; Bohr, J.; Grimm, H.; Bohr, J.; Chien, C.L.; Grimm, H.; Cable, J.W.
1988-01-01
Single crystal magnetic rare earth superlattices were synthesized by molecular beam epitaxy. The studies include four rare earth systems: Gd-Y, Dy-Y, Ho-Y, and Gd-Dy. The magnetic properties and the long-range spin order are reviewed in terms of the interfacial behavior, and the interlayer exchange coupling across Y medium
International Nuclear Information System (INIS)
Birkholz, Jens Eiko
2008-01-01
We study the influence of the spin-orbit interaction on the electronic transport through quantum dots and quantum wires of correlated electrons. Starting with a one-dimensional infinite continuum model without Coulomb interaction, we analyze the interplay of the spin-orbit interaction, an external magnetic field, and an external potential leading to currents with significant spin-polarization in appropriate parameter regimes. Since lattice models are known to often be superior to continuum models in describing the experimental situation of low-dimensional mesoscopic systems, we construct a lattice model which exhibits the same low-energy physics in terms of energy dispersion and spin expectation values. Confining the lattice to finite length and connecting it to two semi-infinite noninteracting Fermi liquid leads, we calculate the zero temperature linear conductance using the Landauer-Bttiker formalism and show that spin-polarization effects also evolve for the lattice model by adding an adequate potential structure and can be controlled by tuning the overall chemical potential of the system (quantum wire and leads). Next, we allow for a finite Coulomb interaction and use the functional renormalization group (fRG) method to capture correlation effects induced by the Coulomb interaction. The interacting system is thereby transformed into a noninteracting system with renormalized system parameters. For short wires (∝100 lattice sites), we show that the energy regime in which spin polarization is found is strongly affected by the Coulomb interaction. For long wires (>1000 lattice sites), we find the power-law suppression of the total linear conductance on low energy scales typical for inhomogeneous Luttinger liquids while the degree of spin polarization stays constant. Considering quantum dots which consist of two lattice sites, we observe the well-known Kondo effect and analyze, how the Kondo temperature is affected by the spin-orbit interaction. Moreover, we show
Landau quantized dynamics and spectra for group-VI dichalcogenides, including a model quantum wire
Horing, Norman J. M.
2017-06-01
This work is concerned with the derivation of the Green's function for Landau-quantized carriers in the Group-VI dichalcogenides. In the spatially homogeneous case, the Green's function is separated into a Peierls phase factor and a translationally invariant part which is determined in a closed form integral representation involving only elementary functions. The latter is expanded in an eigenfunction series of Laguerre polynomials. These results for the retarded Green's function are presented in both position and momentum representations, and yet another closed form representation is derived in circular coordinates in terms of the Bessel wave function of the second kind (not to be confused with the Bessel function). The case of a quantum wire is also addressed, representing the quantum wire in terms of a model one-dimensional δ (x ) -potential profile. This retarded Green's function for propagation directly along the wire is determined exactly in terms of the corresponding Green's function for the system without the δ (x ) -potential, and the Landau quantized eigenenergy dispersion relation is examined. The thermodynamic Green's function for the dichalcogenide carriers in a normal magnetic field is formulated here in terms of its spectral weight, and its solution is presented in a momentum/integral representation involving only elementary functions, which is subsequently expanded in Laguerre eigenfunctions and presented in both momentum and position representations.
Landau quantized dynamics and spectra for group-VI dichalcogenides, including a model quantum wire
Directory of Open Access Journals (Sweden)
Norman J. M. Horing
2017-06-01
Full Text Available This work is concerned with the derivation of the Green’s function for Landau-quantized carriers in the Group-VI dichalcogenides. In the spatially homogeneous case, the Green’s function is separated into a Peierls phase factor and a translationally invariant part which is determined in a closed form integral representation involving only elementary functions. The latter is expanded in an eigenfunction series of Laguerre polynomials. These results for the retarded Green’s function are presented in both position and momentum representations, and yet another closed form representation is derived in circular coordinates in terms of the Bessel wave function of the second kind (not to be confused with the Bessel function. The case of a quantum wire is also addressed, representing the quantum wire in terms of a model one-dimensional δ(x-potential profile. This retarded Green’s function for propagation directly along the wire is determined exactly in terms of the corresponding Green’s function for the system without the δ(x-potential, and the Landau quantized eigenenergy dispersion relation is examined. The thermodynamic Green’s function for the dichalcogenide carriers in a normal magnetic field is formulated here in terms of its spectral weight, and its solution is presented in a momentum/integral representation involving only elementary functions, which is subsequently expanded in Laguerre eigenfunctions and presented in both momentum and position representations.
International Nuclear Information System (INIS)
Zozoulenko, I V; Ihnatsenka, S
2008-01-01
We have developed a mean-field first-principles approach for studying electronic and transport properties of low dimensional lateral structures in the integer quantum Hall regime. The electron interactions and spin effects are included within the spin density functional theory in the local density approximation where the conductance, the density, the effective potentials and the band structure are calculated on the basis of the Green's function technique. In this paper we present a systematic review of the major results obtained on the energetics, spin polarization, effective g factor, magnetosubband and edge state structure of split-gate and cleaved-edge overgrown quantum wires as well as on the conductance of quantum point contacts (QPCs) and open quantum dots. In particular, we discuss how the spin-resolved subband structure, the current densities, the confining potentials, as well as the spin polarization of the electron and current densities in quantum wires and antidots evolve when an applied magnetic field varies. We also discuss the role of the electron interaction and spin effects in the conductance of open systems focusing our attention on the 0.7 conductance anomaly in the QPCs. Special emphasis is given to the effect of the electron interaction on the conductance oscillations and their statistics in open quantum dots as well as to interpretation of the related experiments on the ultralow temperature saturation of the coherence time in open dots
International Nuclear Information System (INIS)
Wang, C.-L.; Tsai, M.-C.; Gong, J.-R.; Liao, W.-T.; Lin, P.-Y.; Yen, K.-Y.; Chang, C.-C.; Lin, H.-Y.; Hwang, S.-K.
2007-01-01
Investigations were conducted to explore the effect of Al 0.3 Ga 0.7 N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In 0.2 Ga 0.8 N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al 0.3 Ga 0.7 N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In 0.2 Ga 0.8 N/GaN MQW LED structures enables the improved LED performance
International Nuclear Information System (INIS)
Betancourt-Riera, Ri.; Nieto Jalil, J.M.; Betancourt-Riera, Re.; Riera, R.
2009-01-01
The differential cross-section for an electron Raman scattering process in a semiconductor quantum wire in the presence of an external magnetic field perpendicular to the plane of confinement regarding phonon-assisted transitions, is calculated. We assume single parabolic conduction band and present a description of the phonon modes of cylindrical structures embedded in another material using the Froehlich phonon interaction. To illustrate the theory we use a GaAs/Al 0.35 Ga 0.75 As system. The emission spectra are discussed for different scattering configurations and the selection rules for the processes are also studied. The magnetic field distribution is considered constant with value B 0 inside of the wire, and zero outside.
Energy Technology Data Exchange (ETDEWEB)
Sales, D L; Molina, S I [Departamento de Ciencia de los Materiales e I. M. y Q. I., Universidad de Cadiz, Campus Rio San Pedro, E-11510 Puerto Real, Cadiz (Spain); Varela, M; Pennycook, S J [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Galindo, P L [Departamento de Lenguajes y Sistemas Informaticos, Universidad de Cadiz, Campus Rio San Pedro, E-11510 Puerto Real, Cadiz (Spain); Gonzalez, L; Gonzalez, Y [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, E-28760 Tres Cantos, Madrid (Spain); Fuster, D, E-mail: david.sales@uca.es [UMDO - Unidad Asociada al CSIC-IMM, Instituto de Ciencia de Materiales, Universidad de Valencia, PO Box 22085, 4607 Valencia (Spain)
2010-08-13
Evolution of the size, shape and composition of self-assembled InAs/InP quantum wires through the Stranski-Krastanov transition has been determined by aberration-corrected Z-contrast imaging. High resolution compositional maps of the wires in the initial, intermediate and final formation stages are presented. (001) is the main facet at their very initial stage of formation, which is gradually reduced in favour of {l_brace}114{r_brace} or {l_brace}118{r_brace}, ending with the formation of mature quantum wires with {l_brace}114{r_brace} facets. Significant changes in wire dimensions are measured when varying slightly the amount of InAs deposited. These results are used as input parameters to build three-dimensional models that allow calculation of the strain energy during the quantum wire formation process. The observed morphological evolution is explained in terms of the calculated elastic energy changes at the growth front. Regions of the wetting layer close to the nanostructure perimeters have higher strain energy, causing migration of As atoms towards the quantum wire terraces, where the structure is partially relaxed; the thickness of the wetting layer is reduced in these zones and the island height increases until the (001) facet is removed.
Pressure dependence of photoluminescence of InAs/InP self-assembled quantum wires
International Nuclear Information System (INIS)
Ruiz-Castillo, M.; Segura, A.; Sans, J.A.; Martinez-Pastor, J.; Fuster, D.; Gonzalez, Y.; Gonzalez, L.
2007-01-01
This paper investigates the electronic structure of self-assembled InAs quantum wires (QWrs), grown under different conditions by molecular beam epitaxy on InP, by means of photoluminescence measurements under pressure. In samples with regularly distributed QWrs, room pressure photoluminescence spectra consist of a broad band centred at about 0.85 eV, which can be easily de-convoluted in a few Gaussian peaks. In samples with isolated QWrs, photoluminescence spectra exhibit up to four clearly resolved bands. Applying hydrostatic pressure, the whole emission band monotonously shifts towards higher photon energies with pressure coefficients ranging from 72 to 98 meV/GPa. In contrast to InAs quantum dots on GaAs, quantum wires photoluminescence is observed up to 10 GPa, indicating that InAs QWrs are metastable well above pressure at which bulk InAs undergoes a phase transition to the rock-salt phase (7 GPa). (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Simulations of quantum transport in nanoscale systems: application to atomic gold and silver wires
DEFF Research Database (Denmark)
Mozos, J.L.; Ordejon, P.; Brandbyge, Mads
2002-01-01
. The potential drop profile and induced electronic current (and therefore the conductance) are obtained from first principles. The method takes into account the atomic structure of both the nanoscale structure and the semi-infinite electrodes through which the potential is applied. Non-equilibrium Green......'s function techniques are used to calculate the quantum conductance. Here we apply the method to the study of the electronic transport in wires of gold and silver with atomic thickness. We show the results of our calculations, and compare with some of the abundant experimental data on these systems....
One phonon resonant Raman scattering in semiconductor quantum wires: Magnetic field effect
Energy Technology Data Exchange (ETDEWEB)
Betancourt-Riera, Re., E-mail: rbriera@posgrado.cifus.uson.mx [Instituto Tecnologico de Hermosillo, Avenida Tecnologico S/N, Colonia Sahuaro, C.P. 83170, Hermosillo, Sonor, (Mexico); Departamento de Investigacion en Fisica, Universidad de Sonora, Apartado Postal 5-088, C.P. 83190, Hermosillo, Sonora (Mexico); Betancourt-Riera, Ri. [Instituto Tecnologico de Hermosillo, Avenida Tecnologico S/N, Colonia Sahuaro, C.P. 83170, Hermosillo, Sonora (Mexico); Nieto Jalil, J.M. [Tecnologico de Monterrey-Campus Sonora Norte, Bulevar Enrique Mazon Lopez No. 965, C.P. 83000, Hermosillo, Sonora (Mexico); Riera, R. [Departamento de Investigacion en Fisica, Universidad de Sonora, Apartado Postal 5-088, C.P. 83190, Hermosillo, Sonora (Mexico)
2013-02-01
We have developed a theory of one phonon resonant Raman scattering in a semiconductor quantum wire of cylindrical geometry in the presence of an external magnetic field distribution, parallel to the cylinder axis. The effect of the magnetic field in the electron and hole states, and in the Raman scattering efficiency, is determinate. We consider the electron-phonon interaction using a Froehlich-type Hamiltonian, deduced for the case of complete confinement phonon modes by Comas and his collaborators. We also assume T=0 K, a single parabolic conduction and valence bands. The spectra are discussed for different magnetic field values and the selection rules for the processes are also studied.
Novel phenomena in one-dimensional non-linear transport in long quantum wires
International Nuclear Information System (INIS)
Morimoto, T; Hemmi, M; Naito, R; Tsubaki, K; Park, J-S; Aoki, N; Bird, J P; Ochiai, Y
2006-01-01
We have investigated the non-linear transport properties of split-gate quantum wires of various channel lengths. In this report, we present results on a resonant enhancement of the non-linear conductance that is observed near pinch-off under a finite source-drain bias voltage. The resonant phenomenon exhibits a strong dependence on temperature and in-plane magnetic field. We discuss the possible relationship of this phenomenon to the spin-polarized manybody state that has recently been suggested to occur in quasi-one dimensional systems
Half-metal phases in a quantum wire with modulated spin-orbit interaction
Cabra, D. C.; Rossini, G. L.; Ferraz, A.; Japaridze, G. I.; Johannesson, H.
2017-11-01
We propose a spin filter device based on the interplay of a modulated spin-orbit interaction and a uniform external magnetic field acting on a quantum wire. Half-metal phases, where electrons with only a selected spin polarization exhibit ballistic conductance, can be tuned by varying the magnetic field. These half-metal phases are proven to be robust against electron-electron repulsive interactions. Our results arise from a combination of explicit band diagonalization, bosonization techniques, and extensive density matrix renormalization group computations.
Exploring semiconductor quantum dots and wires by high resolution electron microscopy
Energy Technology Data Exchange (ETDEWEB)
Molina, S I [Departamento de Ciencia de los Materiales e Ing Metalurgica y Q. Inorganica, F. de Ciencias, Universidad de Cadiz, Campus Rio San Pedro. 11510 Puerto Real (Cadiz) (Spain); Galindo, P L [Departamento de Lenguajes y Sistemas Informaticos, CASEM, Universidad de Cadiz, Campus Rio San Pedro. 11510 Puerto Real (Cadiz) (Spain); Gonzalez, L; Ripalda, J M [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760 Tres Cantos, Madrid (Spain); Varela, M; Pennycook, S J, E-mail: sergio.molina@uca.e [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge TN 37831 (United States)
2010-02-01
We review in this communication our contribution to the structural characterisation of semiconductor quantum dots and wires by high resolution electron microscopy, both in phase-contrast and Z-contrast modes. We show how these techniques contribute to predict the preferential sites of nucleation of these nanostructures, and also determine the compositional distribution in 1D and 0D nanostructures. The results presented here were produced in the framework of the European Network of Excellence entitled {sup S}elf-Assembled semiconductor Nanostructures for new Devices in photonics and Electronics (SANDiE){sup .}
Quantum Wells, Wires and Dots Theoretical and Computational Physics of Semiconductor Nanostructures
Harrison, Paul
2011-01-01
Quantum Wells, Wires and Dots, 3rd Edition is aimed at providing all the essential information, both theoretical and computational, in order that the reader can, starting from essentially nothing, understand how the electronic, optical and transport properties of semiconductor heterostructures are calculated. Completely revised and updated, this text is designed to lead the reader through a series of simple theoretical and computational implementations, and slowly build from solid foundations, to a level where the reader can begin to initiate theoretical investigations or explanations of their
International Nuclear Information System (INIS)
Zhang Zhiyong; Xiong Shijie
2005-01-01
We investigate the influence of an external voltage V 0 on conductance G through a quantum dot (QD), which is side-coupled to a quantum wire of length L W , whose two ends are weakly connected to leads. In our calculation, the poor man's scaling law and slave-boson mean-field method are employed. With V 0 increased, a series of resonant regions is formed and G exhibits different properties in and out of these regions, which is the universal result of the finite-size effect on the Kondo correlation. In symmetric structures, the would-be resonant regions corresponding to odd wavefunctions are removed. If the symmetry is broken by changing the QD position, those regions will be recovered. In two asymmetric structures with their wire lengths being L W and L W +1, respectively, the two sets of resonant regions intersect with each other. These symmetry-related phenomena characterize side-coupled QD structures. With the barrier width increased, the number of resonant regions is increased, too
Quantum wells, wires and dots theoretical and computational physics of semiconductor nanostructures
Harrison, Paul
2016-01-01
Quantum Wells, Wires and Dots provides all the essential information, both theoretical and computational, to develop an understanding of the electronic, optical and transport properties of these semiconductor nanostructures. The book will lead the reader through comprehensive explanations and mathematical derivations to the point where they can design semiconductor nanostructures with the required electronic and optical properties for exploitation in these technologies. This fully revised and updated 4th edition features new sections that incorporate modern techniques and extensive new material including: - Properties of non-parabolic energy bands - Matrix solutions of the Poisson and Schrodinger equations - Critical thickness of strained materials - Carrier scattering by interface roughness, alloy disorder and impurities - Density matrix transport modelling -Thermal modelling Written by well-known authors in the field of semiconductor nanostructures and quantum optoelectronics, this user-friendly guide is pr...
Formation of quantum wires and dots on InP(001) by As/P exchange
International Nuclear Information System (INIS)
Yang, Haeyeon; Ballet, P.; Salamo, G. J.
2001-01-01
We report on the use of in situ scanning tunneling microscopy to study As/P exchange on InP(001) surfaces by molecular beam epitaxy. Results demonstrate that the exchange process can be controlled to selectively produce either quantum wires or quantum dots. 15 nm wide self-assembled nanowires are observed, and they are elongated along the dimer row direction of the InP(001)-2x4 surface with a length of over 1 μm and flat top 2x4 surfaces. In addition, when the nanowires are annealed with no arsenic overpressure, the surface reconstruction transforms from 2x4 to 4x2 and the nanowires transform into dots with a rectangular base and flat top. [copyright] 2001 American Institute of Physics
Energy Technology Data Exchange (ETDEWEB)
Karpunin, V. V., E-mail: karpuninvv@mail.ru [Mordovian State Pedagogical Institute (Russian Federation); Margulis, V. A., E-mail: theorphysics@mrsu.ru [Mordovian State University (Russian Federation)
2016-06-15
An analytical expression for the coefficient of absorption of electromagnetic radiation by electrons in a quantum wire in a magnetic field is derived. The case of a magnetic field transverse with respect to the wire axis is considered. The resonance character of absorption is shown, and the resonance frequencies as functions of the field are determined. The effect of the scattering of electrons at optical phonons is studied, and it is shown that scattering is responsible for additional resonance absorption peaks.
International Nuclear Information System (INIS)
Fuster, David; Alen, Benito; Gonzalez, Luisa; Gonzalez, Yolanda; Martinez-Pastor, Juan; Gonzalez, Maria Ujue; GarcIa, Jorge M
2007-01-01
In this work we explore the first stages of quantum wire (QWR) formation studying the evolution of the growth front for InAs coverages below the critical thickness, θ c , determined by reflection high energy electron diffraction (RHEED). Our results obtained by in situ measurement of the accumulated stress evolution during InAs growth on InP(001) show that the relaxation process starts at a certain InAs coverage θ R c . At this θ R , the spontaneous formation of isolated quantum wires takes place. For θ>θ R this ensemble of isolated nanostructures progressively evolves towards QWRs that cover the whole surface for θ θ c . These results allow for a better understanding of the self-assembling process of QWRs and enable the study of the individual properties of InAs/InP self-assembled single quantum wires
Directory of Open Access Journals (Sweden)
Manvir S. Kushwaha
2013-04-01
Full Text Available The nanofabrication technology has taught us that an m-dimensional confining potential imposed upon an n-dimensional electron gas paves the way to a quasi-(n-m-dimensional electron gas, with m ⩽ n and 1 ⩽ n, m ⩽ 3. This is the road to the (semiconducting quasi-n dimensional electron gas systems we have been happily traversing on now for almost two decades. Achieving quasi-one dimensional electron gas (Q-1DEG [or quantum wire(s for more practical purposes] led us to some mixed moments in this journey: while the reduced phase space for the scattering led us believe in the route to the faster electron devices, the proximity to the 1D systems left us in the dilemma of describing it as a Fermi liquid or as a Luttinger liquid. No one had ever suspected the potential of the former, but it took quite a while for some to convince the others on the latter. A realistic Q-1DEG system at the low temperatures is best describable as a Fermi liquid rather than as a Luttinger liquid. In the language of condensed matter physics, a critical scrutiny of Q-1DEG systems has provided us with a host of exotic (electronic, optical, and transport phenomena unseen in their higher- or lower-dimensional counterparts. This has motivated us to undertake a systematic investigation of the inelastic electron scattering (IES and the inelastic light scattering (ILS from the elementary electronic excitations in quantum wires. We begin with the Kubo's correlation functions to derive the generalized dielectric function, the inverse dielectric function, and the Dyson equation for the dynamic screened potential in the framework of Bohm-Pines’ random-phase approximation. These fundamental tools then lead us to develop methodically the theory of IES and ILS for the Q-1DEG systems. As an application of the general formal results, which know no bounds regarding the subband occupancy, we compute the density of states, the Fermi energy, the full excitation spectrum [comprised of
Spectroscopy of shallow InAs/InP quantum wire nanostructures
International Nuclear Information System (INIS)
Mazur, Yu I; Dorogan, V G; Noda, S; Salamo, G J; Bierwagen, O; Masselink, W T; Tarasov, G G; Zhuchenko, Z Ya; DeCuir Jr, E A; Manasreh, M O
2009-01-01
A comprehensive investigation of the optical properties of InAs/InP(001) quantum wires (QWrs) and their parent quantum well system formed by the deposition of 4 ML (monolayers) of InAs on InP is carried out by means of temperature dependent photoluminescence (PL) and Fourier transform infrared spectroscopy. Unusual two-branch switching of the excitonic PL band maxima is revealed in the temperature dependence for both wires and wells. This is interpreted in terms of the thermal activation of excitonic ground states of the confined nanostructures. Strong modification of the absorbance line shape leading to the appearance of flat spectral regions in the room temperature spectrum of a QWr sample is interpreted in terms of thermally induced change of the dimensionality: from 1D to anisotropic 2D. This change of dimensionality is detected also in the polarized absorbance measurements through the disappearance or significant reduction of the polarization anisotropy in the regions of the hh1-e1 (hh: heavy hole; e: electron) and lh1-e1 (lh: light hole) transitions in QWrs.
Quantum transport through disordered 1D wires: Conductance via localized and delocalized electrons
International Nuclear Information System (INIS)
Gopar, Víctor A.
2014-01-01
Coherent electronic transport through disordered systems, like quantum wires, is a topic of fundamental and practical interest. In particular, the exponential localization of electron wave functions-Anderson localization-due to the presence of disorder has been widely studied. In fact, Anderson localization, is not an phenomenon exclusive to electrons but it has been observed in microwave and acoustic experiments, photonic materials, cold atoms, etc. Nowadays, many properties of electronic transport of quantum wires have been successfully described within a scaling approach to Anderson localization. On the other hand, anomalous localization or delocalization is, in relation to the Anderson problem, a less studied phenomenon. Although one can find signatures of anomalous localization in very different systems in nature. In the problem of electronic transport, a source of delocalization may come from symmetries present in the system and particular disorder configurations, like the so-called Lévy-type disorder. We have developed a theoretical model to describe the statistical properties of transport when electron wave functions are delocalized. In particular, we show that only two physical parameters determine the complete conductance distribution
Thermalization dynamics of two correlated bosonic quantum wires after a split
Huber, Sebastian; Buchhold, Michael; Schmiedmayer, Jörg; Diehl, Sebastian
2018-04-01
Cherently splitting a one-dimensional Bose gas provides an attractive, experimentally established platform to investigate many-body quantum dynamics. At short enough times, the dynamics is dominated by the dephasing of single quasiparticles, and well described by the relaxation towards a generalized Gibbs ensemble corresponding to the free Luttinger theory. At later times on the other hand, the approach to a thermal Gibbs ensemble is expected for a generic, interacting quantum system. Here, we go one step beyond the quadratic Luttinger theory and include the leading phonon-phonon interactions. By applying kinetic theory and nonequilibrium Dyson-Schwinger equations, we analyze the full relaxation dynamics beyond dephasing and determine the asymptotic thermalization process in the two-wire system for a symmetric splitting protocol. The major observables are the different phonon occupation functions and the experimentally accessible coherence factor, as well as the phase correlations between the two wires. We demonstrate that, depending on the splitting protocol, the presence of phonon collisions can have significant influence on the asymptotic evolution of these observables, which makes the corresponding thermalization dynamics experimentally accessible.
Directory of Open Access Journals (Sweden)
L. Caroline Sugirtham
2014-01-01
Full Text Available The binding energy of a polaron confined in a GaAs/Ga1-xAlxAs quantum well wire is calculated within the framework of the variational technique and Lee-Low Pines approach. The polaron-induced photoionization cross section as a function of normalized photon energy for a on-centre donor impurity in the quantum wire is investigated. The oscillator strength with the geometrical effect is studied taking into account the polaron effects in a GaAs/Ga0.8Al0.2As quantum well wire. The effect of polaron on the third-order susceptibility of third harmonic generation is studied. Our theoretical results are shown to be in good agreement with previous investigations.
Possible THz gain in superlattices at a stable operation point
DEFF Research Database (Denmark)
Wacker, Andreas; Allen, S. J.; Scott, J. S.
1997-01-01
We demonstrate that semiconductor superlattices may provide gain at THz frequencies at an operation point which is stable against fluctuations at lower frequency. While an explicit experimental demonstration for the sample considered could not be achieved, the underlying principle of quantum resp...... response is quite general and may prove successful for differently designed superlattices....
Ye, Wei; Liu, Yifei
2018-04-01
This work formulates the solutions to the elastic and piezoelectric fields around a quantum wire (QWR) with interface elasticity effect. Closed-form solutions to the piezoelectric potential field of zincblende QWR/matrix heterostructures grown along [111] crystallographic orientation are found and numerical results of InAs/InP heterostructures are provided as an example. The piezoelectric potential in the matrix depends on the interface elasticity, the radius and stiffness of the QWR. Our results indicate that interface elasticity can significantly alter the elastic and piezoelectric fields near the interface. Additionally, when the elastic property of the QWR is considered to be anisotropic in contrary to the common isotropic assumption, piezoelectric potentials are found to be distinct near the interface, but the deviations are negligible at positions far away from the interface.
Spin-orbit interaction induced anisotropic property in interacting quantum wires
Directory of Open Access Journals (Sweden)
Chang Kai
2011-01-01
Full Text Available We investigate theoretically the ground state and transport property of electrons in interacting quantum wires (QWs oriented along different crystallographic directions in (001 and (110 planes in the presence of the Rashba spin-orbit interaction (RSOI and Dresselhaus SOI (DSOI. The electron ground state can cross over different phases, e.g., spin density wave, charge density wave, singlet superconductivity, and metamagnetism, by changing the strengths of the SOIs and the crystallographic orientation of the QW. The interplay between the SOIs and Coulomb interaction leads to the anisotropic dc transport property of QW which provides us a possible way to detect the strengths of the RSOI and DSOI. PACS numbers: 73.63.Nm, 71.10.Pm, 73.23.-b, 71.70.Ej
Interacting quantum wires: A possible explanation for the 0.7 anomalous conductance
International Nuclear Information System (INIS)
Malard, M.; Schmeltzer, D.; Kuklov, A.
2009-01-01
We investigate an effective one-dimensional conducting channel considering both the contact umklapp and the Coulomb electron-electron interaction. We show that, at low electronic density, the proximity to the Wigner crystal reproduces the anomaly in conductance at 0.7G 0 . The crucial ingredient of our theory is the fact that the gate voltage acts as a bias controlling the intensity of the umklapp term. At large gate voltages, the umklapp vanishes and we obtain a conducting quantum wire with a perfect conductance. At low gate voltages, the Wigner crystal is pinned by the umklapp term, giving rise to an insulating behavior with vanishing conductance. This crossover pattern has a transition point which can be identified with the anomalous conductance around 0.7G 0 . This picture is obtained within the framework of a renormalization group calculation. The conductance static regime is achieved by taking first the limit of finite length and then the limit of zero frequency.
Directory of Open Access Journals (Sweden)
A A Shokri
2013-10-01
Full Text Available In this paper, we have investigated the spin-dependent transport properties and electron entanglement in a mesoscopic system, which consists of two semi-infinite leads (as source and drain separated by a typical quantum wire with a given potential. The properties studied include current-voltage characteristic, electrical conductivity, Fano factor and shot noise, and concurrence. The calculations are based on the transfer matrix method within the effective mass approximation. Using the Landauer formalism and transmission coefficient, the dependence of the considered quantities on type of potential well, length and width of potential well, energy of transmitted electron, temperature and the voltage have been theoretically studied. Also, the effect of the above-mentioned factors has been investigated in the nanostructure. The application of the present results may be useful in designing spintronice devices.
Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry
International Nuclear Information System (INIS)
Betancourt-Riera, Re.; Betancourt-Riera, Ri.; Nieto Jalil, J. M.; Riera, R.
2015-01-01
We study the electron states and the differential cross section for an electron Raman scattering process in a semiconductor quantum well wire of cylindrical ring geometry. The electron Raman scattering developed here can be used to provide direct information about the electron band structures of these confinement systems. We assume that the system grows in a GaAs/Al 0.35 Ga 0.65 As matrix. The system is modeled by considering T = 0 K and also a single parabolic conduction band, which is split into a sub-band system due to the confinement. The emission spectra are discussed for different scattering configurations, and the selection rules for the processes are also studied. Singularities in the spectra are found and interpreted. (paper)
Electron states and electron Raman scattering in semiconductor double cylindrical quantum well wire
International Nuclear Information System (INIS)
Munguía-Rodríguez, M; Riera, R; Betancourt-Riera, Ri; Betancourt-Riera, Re; Nieto Jalil, J M
2016-01-01
The differential cross section for an electron Raman scattering process in a semiconductor GaAs/AlGaAs double quantum well wire is calculated, and expressions for the electronic states are presented. The system is modeled by considering T = 0 K and also with a single parabolic conduction band, which is split into a subband system due to the confinement. The gain and differential cross-section for an electron Raman scattering process are obtained. In addition, the emission spectra for several scattering configurations are discussed, and interpretations of the singularities found in the spectra are given. The electron Raman scattering studied here can be used to provide direct information about the efficiency of the lasers. (paper)
Field effect in the quantum Hall regime of a high mobility graphene wire
Energy Technology Data Exchange (ETDEWEB)
Barraud, C., E-mail: cbarraud@phys.ethz.ch, E-mail: clement.barraud@univ-paris-diderot.fr; Choi, T.; Ihn, T.; Ensslin, K. [Solid State Physics Laboratory, ETH Zürich, CH-8093 Zürich (Switzerland); Butti, P.; Shorubalko, I. [Swiss Federal Laboratories of Materials Science and Technologies, EMPA Elect. Metrol. Reliabil. Lab., CH-8600 Dübendorf (Switzerland); Taniguchi, T.; Watanabe, K. [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)
2014-08-21
In graphene-based electronic devices like in transistors, the field effect applied thanks to a gate electrode allows tuning the charge density in the graphene layer and passing continuously from the electron to the hole doped regime across the Dirac point. Homogeneous doping is crucial to understand electrical measurements and for the operation of future graphene-based electronic devices. However, recently theoretical and experimental studies highlighted the role of the electrostatic edge due to fringing electrostatic field lines at the graphene edges [P. Silvestrov and K. Efetov, Phys. Rev. B 77, 155436 (2008); F. T. Vasko and I. V. Zozoulenko, Appl. Phys. Lett. 97, 092115 (2010)]. This effect originates from the particular geometric design of the samples. A direct consequence is a charge accumulation at the graphene edges giving a value for the density, which deviates from the simple picture of a plate capacitor and also varies along the width of the graphene sample. Entering the quantum Hall regime would, in principle, allow probing this accumulation thanks to the extreme sensitivity of this quantum effect to charge density and the charge distribution. Moreover, the presence of an additional and counter-propagating edge channel has been predicted [P. Silvestrov and K. Efetov, Phys. Rev. B 77, 155436 (2008)] giving a fundamental aspect to this technological issue. In this article, we investigate this effect by tuning a high mobility graphene wire into the quantum Hall regime in which charge carriers probe the electrostatic potential at high magnetic field close to the edges. We observe a slight deviation to the linear shift of the quantum Hall plateaus with magnetic field and we study its evolution for different filling factors, which correspond to different probed regions in real space. We discuss the possible origins of this effect including an increase of the charge density towards the edges.
(110) oriented GaAs/Al0.3Ga0.7As quantum wells for optimized T-shaped quantum wires
DEFF Research Database (Denmark)
Gislason, Hannes; Sørensen, Claus Birger; Hvam, Jørn Märcher
1996-01-01
High control of (110) oriented GaAs/Al0.3Ga0.7As quantum wells is very important for the growth of optimized T-shaped GaAs/AlGaAs quantum wires, We investigate theoretically and experimentally 20-200 Angstrom wide (110) oriented GaAs quantum wells grown on (110) oriented substrates and cleaved...... edges. Photoluminescence transition energies are found to be in good agreement with theory for all well widths. The mean well width is controllable to 1 monolayer accuracy and an effective well width fluctuation of 3.7 Angstrom is derived from the photoluminescence linewidths. The growth rate...
Superlattice electroabsorption radiation detector
International Nuclear Information System (INIS)
Cooke, B.J.
1993-06-01
This paper provides a preliminary investigation of a new class of superlattice electroabsorption radiation detectors that employ direct optical modulation for high-speed, two-dimensional (2-D), high-resolution imaging. Applications for the detector include nuclear radiation measurements, tactical guidance and detection (laser radar), inertial fusion plasma studies, and satellite-based sensors. Initial calculations discussed in this paper indicate that a 1.5-μm (GaAlAs) multi-quantum-well (MQW) Fabry-Perot detector can respond directly to radiation of energies 1 eV to 10 KeV, and indirectly (with scattering targets) up through gamma, with 2-D sample rates on the order of 20 ps
Passive high-frequency devices based on superlattice ferromagnetic nanowires
International Nuclear Information System (INIS)
Ye, B.; Li, F.; Cimpoesu, D.; Wiley, J.B.; Jung, J.-S.; Stancu, A.; Spinu, L.
2007-01-01
In this paper we propose to tailor the bandwidth of a microwave filter by exploitation of shape anisotropy of nanowires. In order to achieve this control of shape anisotropy, we considered superlattice wires containing varying-sized ferromagnetic regions separated by nonferromagnetic regions. Superlattice wires of Ni and Au with a nominal diameter of 200 nm were grown using standard electrodeposition techniques. The microwave properties were probed using X-band (9.8 GHz) ferromagnetic resonance (FMR) experiments performed at room temperature. In order to investigate the effectiveness of the shape anisotropy on the superlattice nanowire based filter the FMR spectrum of superlattice structure is compared to the FMR spectra of nanowires samples with constant length
Giant nonlinear interaction between two optical beams via a quantum dot embedded in a photonic wire
Nguyen, H. A.; Grange, T.; Reznychenko, B.; Yeo, I.; de Assis, P.-L.; Tumanov, D.; Fratini, F.; Malik, N. S.; Dupuy, E.; Gregersen, N.; Auffèves, A.; Gérard, J.-M.; Claudon, J.; Poizat, J.-Ph.
2018-05-01
Optical nonlinearities usually appear for large intensities, but discrete transitions allow for giant nonlinearities operating at the single-photon level. This has been demonstrated in the last decade for a single optical mode with cold atomic gases, or single two-level systems coupled to light via a tailored photonic environment. Here, we demonstrate a two-mode giant nonlinearity with a single semiconductor quantum dot (QD) embedded in a photonic wire antenna. We exploit two detuned optical transitions associated with the exciton-biexciton QD level scheme. Owing to the broadband waveguide antenna, the two transitions are efficiently interfaced with two free-space laser beams. The reflection of one laser beam is then controlled by the other beam, with a threshold power as low as 10 photons per exciton lifetime (1.6 nW ). Such a two-color nonlinearity opens appealing perspectives for the realization of ultralow-power logical gates and optical quantum gates, and could also be implemented in an integrated photonic circuit based on planar waveguides.
International Nuclear Information System (INIS)
Oliveira, L.E.; Porras Montenegro, N.; Latge, A.
1992-07-01
The acceptor-related photoluminescence spectrum of a GaAs quantum-wire microcrystal is theoretically investigated via a model calculation within the effective-mass approximation, with the acceptor envelope wave functions and binding energies calculated through a variational procedure. Typical theoretical photoluminescence spectra show two peaks associated to transitions from the n = 1 conduction subband electron gas to acceptors at the on-center and on-edge positions in the wire in good agreement with the recent experimental results by Hirum et al. (Appl. Phys. Lett. 59, 431 (1991)). (author). 14 refs, 3 figs
International Nuclear Information System (INIS)
Chen, J C H; Klochan, O; Micolich, A P; Hamilton, A R; Martin, T P; Ho, L H; Zuelicke, U; Reuter, D; Wieck, A D
2010-01-01
In this paper, We study the Zeeman spin-splitting in hole quantum wires oriented along the [011] and [01 1-bar] crystallographic axes of a high mobility undoped (100)-oriented AlGaAs/GaAs heterostructure. Our data show that the spin-splitting can be switched 'on' (finite g*) or 'off' (zero g*) by rotating the field from a parallel to a perpendicular orientation with respect to the wire, and the properties of the wire are identical for the two orientations with respect to the crystallographic axes. We also find that the g-factor in the parallel orientation decreases as the wire is narrowed. This is in contrast to electron quantum wires, where the g-factor is enhanced by exchange effects as the wire is narrowed. This is evidence for a k-dependent Zeeman splitting that arises from the spin-3/2 nature of holes.
Vapor-liquid-solid mechanisms: Challenges for nanosized quantum cluster/dot/wire materials
Cheyssac, P.; Sacilotti, M.; Patriarche, G.
2006-08-01
The growth mechanism model of a nanoscaled material is a critical step that has to be refined for a better understanding of a nanostructure's dot/wire fabrication. To do so, the growth mechanism will be discussed in this paper and the influence of the size of the metallic nanocluster starting point, referred to later as "size effect," will be studied. Among many of the so-called size effects, a tremendous decrease of the melting point of the metallic nanocluster changes the physical properties as well as the physical/mechanical interactions inside the growing structure composed of a metallic dot on top of a column. The thermodynamic size effect is related to the bending or curvature of chains of atoms, giving rise to the weakening of bonds between them; this size or curvature effect is described and approached to crystal nanodot/wire growth. We will describe this effect as that of a "cooking machine" when the number of atoms decreases from ˜1023at./cm3 for a bulk material to a few tens of them in a 1-2nm diameter sphere. The decrease of the number of atoms in a metallic cluster from such an enormous quantity is accompanied by a lowering of the melting temperature that extends from 200 up to 1000K, depending on the metallic material and its size under study. In this respect, the vapor-liquid-solid (VLS) model, which is the most utilized growth mechanism for quantum nanowires and nanodots, is critically exposed to size or curvature effects (CEs). More precisely, interactions in the vicinity of the growth regions should be reexamined. Some results illustrating the growth of micrometer-/nanometer-sized materials are presented in order to corroborate the CE/VLS models utilized by many research groups in today's nanosciences world. Examples of metallic clusters and semiconducting wires will be presented. The results and comments presented in this paper can be seen as a challenge to be overcome. From them, we expect that in a near future an improved model can be exposed
Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness
Angelova, T.; Cros, A.; Cantarero, A.; Fuster, D.; González, Y.; González, L.
2008-08-01
Self-assembled InAs/InP (001) quantum wire stacks have been investigated by means of Raman scattering. The characteristics of the observed vibrational modes show clear evidence of confinement and atomic intermixing between As and P atoms from the wire and the spacer. The change in the intermixing with spacer layer thickness and growth temperature is investigated. Likewise, the effect of annealing on the exchange of As and P atoms is also studied. Resonance effects in confined and interface phonons are discussed for excitation in the vicinity of the InAs E1 critical point. Finally, the energy of the interface modes is related to the structural characteristics of the wires by comparing the experimental data with a lattice dynamic calculation based on the dielectric continuum model.
Energy Technology Data Exchange (ETDEWEB)
Saravanan, S. [Dept.of Physics, GTN Arts College, Dindigul-624 005. India (India); Peter, A. John, E-mail: a.john.peter@gmail.com [P.G & Research Dept.of Physics, Government Arts College, Melur-625 106. Madurai. India (India)
2016-05-23
Intense high frequency laser field induced electronic and optical properties of heavy hole exciton in the InAs{sub 0.8}P{sub 0.2}/InP quantum wire is studied taking into account the geometrical confinement effect. Laser field related exciton binding energies and the optical band gap in the InAs{sub 0.8}P{sub 0.2}/InP quantum well wire are investigated. The optical gain, for the interband optical transition, as a function of photon energy, in the InAs{sub 0.8}P{sub 0.2}/InP quantum wire, is obtained in the presence of intense laser field. The compact density matrix method is employed to obtain the optical gain. The obtained optical gain in group III-V narrow quantum wire can be applied for achieving the preferred telecommunication wavelength.
International Nuclear Information System (INIS)
Shiozaki, Nanako; Anantathanasarn, Sanguan; Sato, Taketomo; Hashizume, Tamotsu; Hasegawa, Hideki
2005-01-01
Etched GaAs quantum wires (QWRs) and selectively grown (SG) QWRs were fabricated, and dependence of their photoluminescence (PL) properties on QWR width (W) and QWR distance to surface (d) were investigated. PL intensity greatly reduced with reduction of W and d, due to non-radiative recombination through surface states. Surface passivation by growing a Si interface control layer (Si-ICL) on group III-terminated surfaces greatly improved PL properties
Magnetic memory of a single-molecule quantum magnet wired to a gold surface.
Mannini, Matteo; Pineider, Francesco; Sainctavit, Philippe; Danieli, Chiara; Otero, Edwige; Sciancalepore, Corrado; Talarico, Anna Maria; Arrio, Marie-Anne; Cornia, Andrea; Gatteschi, Dante; Sessoli, Roberta
2009-03-01
In the field of molecular spintronics, the use of magnetic molecules for information technology is a main target and the observation of magnetic hysteresis on individual molecules organized on surfaces is a necessary step to develop molecular memory arrays. Although simple paramagnetic molecules can show surface-induced magnetic ordering and hysteresis when deposited on ferromagnetic surfaces, information storage at the molecular level requires molecules exhibiting an intrinsic remnant magnetization, like the so-called single-molecule magnets (SMMs). These have been intensively investigated for their rich quantum behaviour but no magnetic hysteresis has been so far reported for monolayers of SMMs on various non-magnetic substrates, most probably owing to the chemical instability of clusters on surfaces. Using X-ray absorption spectroscopy and X-ray magnetic circular dichroism synchrotron-based techniques, pushed to the limits in sensitivity and operated at sub-kelvin temperatures, we have now found that robust, tailor-made Fe(4) complexes retain magnetic hysteresis at gold surfaces. Our results demonstrate that isolated SMMs can be used for storing information. The road is now open to address individual molecules wired to a conducting surface in their blocked magnetization state, thereby enabling investigation of the elementary interactions between electron transport and magnetism degrees of freedom at the molecular scale.
Rashba-Zeeman-effect-induced spin filtering energy windows in a quantum wire
International Nuclear Information System (INIS)
Xiao, Xianbo; Nie, Wenjie; Chen, Zhaoxia; Zhou, Guanghui; Li, Fei
2014-01-01
We perform a numerical study on the spin-resolved transport in a quantum wire (QW) under the modulation of both Rashba spin-orbit coupling (SOC) and a perpendicular magnetic field by using the developed Usuki transfer-matrix method in combination with the Landauer-Büttiker formalism. Wide spin filtering energy windows can be achieved in this system for unpolarized spin injection. In addition, both the width of energy window and the magnitude of spin conductance within these energy windows can be tuned by varying Rashba SOC strength, which can be apprehended by analyzing the energy dispersions and spin-polarized density distributions inside the QW, respectively. Further study also demonstrates that these Rashba-SOC-controlled spin filtering energy windows show a strong robustness against disorders. These findings may not only benefit to further understand the spin-dependent transport properties of a QW in the presence of external fields but also provide a theoretical instruction to design a spin filter device.
Rashba-Zeeman-effect-induced spin filtering energy windows in a quantum wire
Energy Technology Data Exchange (ETDEWEB)
Xiao, Xianbo, E-mail: xxb-11@hotmail.com; Nie, Wenjie [School of Computer, Jiangxi University of Traditional Chinese Medicine, Nanchang 330004 (China); Chen, Zhaoxia [School of Mechatronics Engineering, East China Jiaotong University, Nanchang 330013 (China); Zhou, Guanghui [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Hunan Normal University, Changsha 410081 (China); Li, Fei, E-mail: wltlifei@sina.com [Office of Scientific Research, Jiangxi University of Traditional Chinese Medicine, Nanchang 330004 (China)
2014-06-14
We perform a numerical study on the spin-resolved transport in a quantum wire (QW) under the modulation of both Rashba spin-orbit coupling (SOC) and a perpendicular magnetic field by using the developed Usuki transfer-matrix method in combination with the Landauer-Büttiker formalism. Wide spin filtering energy windows can be achieved in this system for unpolarized spin injection. In addition, both the width of energy window and the magnitude of spin conductance within these energy windows can be tuned by varying Rashba SOC strength, which can be apprehended by analyzing the energy dispersions and spin-polarized density distributions inside the QW, respectively. Further study also demonstrates that these Rashba-SOC-controlled spin filtering energy windows show a strong robustness against disorders. These findings may not only benefit to further understand the spin-dependent transport properties of a QW in the presence of external fields but also provide a theoretical instruction to design a spin filter device.
Density of Electronic States in Impurity-Doped Quantum Well Wires
Sierra-Ortega, J.; Mikhailov, I. D.
2003-03-01
We analyze the electronic states in a cylindrical quantum well-wire (QWW) with randomly distributed neutral, D^0 and negatively charged D^- donors. In order to calculate the ground state energies of the off-center donors D^0 and D^- as a function of the distance from the axis of the QWW, we use the recently developed fractal dimension method [1]. There the problems are reduced to those similar for a hydrogen-like atom and a negative-hydrogen-like ion respectively, in an isotropic effective space with variable fractional dimension. The numerical trigonometric sweep method [2] and the three-parameter Hylleraas-type trial function are used to solve these problems. Novel curves for the density of impurity states in cylindrical QWWs with square-well, parabolic and soft-edge barrier potentials are present. Additionally we analyze the effect of the repulsive core on the density of the impurity states. [1] I.D. Mikhailov, F. J. Betancur, R. Escorcia and J. Sierra-Ortega, Phys. Stat. Sol., 234(b), 590 (2002) [2] F. J. Betancur, I. D. Mikhailov and L. E. Oliveira, J. Appl. Phys. D, 31, 3391(1998)
Multilayer self-organization of InGaAs quantum wires on GaAs surfaces
International Nuclear Information System (INIS)
Wang, Zhiming M.; Kunets, Vasyl P.; Xie, Yanze Z.; Schmidbauer, Martin; Dorogan, Vitaliy G.; Mazur, Yuriy I.; Salamo, Gregory J.
2010-01-01
Molecular-Beam Epitaxy growth of multiple In 0.4 Ga 0.6 As layers on GaAs (311)A and GaAs (331)A has been investigated by Atomic Force Microscopy and Photoluminescence. On GaAs (311)A, uniformly distributed In 0.4 Ga 0.6 As quantum wires (QWRs) with wider lateral separation were achieved, presenting a significant improvement in comparison with the result on single layer [H. Wen, Z.M. Wang, G.J. Salamo, Appl. Phys. Lett. 84 (2004) 1756]. On GaAs (331)A, In 0.4 Ga 0.6 As QWRs were revealed to be much straighter than in the previous report on multilayer growth [Z. Gong, Z. Niu, Z. Fang, Nanotechnology 17 (2006) 1140]. These observations are discussed in terms of the strain-field interaction among multilayers, enhancement of surface mobility at high temperature, and surface stability of GaAs (311)A and (331)A surfaces.
Self-organized template formation for quantum dot ordering
International Nuclear Information System (INIS)
Noetzel, Richard; Mano, Takaaki; Wolter, Joachim H.
2004-01-01
Ordered arrays of quantum dots (QDs) are created by self-organized anisotropic strain engineering of (In,Ga)As/GaAs quantum wire (QWR) superlattice (SL) templates on exactly oriented GaAs (100) substrates by molecular beam epitaxy (MBE). The well-defined one-dimensional arrays of (In,Ga)As QDs formed on top of these templates due to local strain recognition are of excellent structural and optical quality up to room temperature. The QD arrays thus allow for fundamental studies and device operation principles based on single- and multiple carrier- and photon-, and coherent quantum interference effects
International Nuclear Information System (INIS)
Osamura, Kozo; Machiya, Shutaro; Tsuchiya, Yoshinori; Suzuki, Hiroshi; Awaji, Satoshi; Takahashi, Kohki; Oguro, Hidetoshi; Harjo, Stefanus; Hemmi, Tsutomu; Nakamoto, Tatsushi; Sugano, Michinaka; Jin, Xinzhe; Kajiwara, Kentaro
2014-01-01
Practical superconducting wires are designed with a composite structure to meet the desired engineering characteristics by expert selection of materials and design of the architecture. In practice, the local strain exerted on the superconducting component influences the electromagnetic properties. Here, recent progress in methods used to measure the local strain in practical superconducting wires and conductors using quantum beam techniques is introduced. Recent topics on the strain dependence of critical current are reviewed for three major practical wires: ITER-Nb 3 Sn strand, DI-BSCCO wires and REBCO tapes. (author)
Antiferromagnetic spinor condensates in a bichromatic superlattice
Tang, Tao; Zhao, Lichao; Chen, Zihe; Liu, Yingmei
2017-04-01
A spinor Bose-Einstein condensate in an optical supelattice has been considered as a good quantum simulator for understanding mesoscopic magnetism. We report an experimental study on an antiferromagnetic spinor condensate in a bichromatic superlattice constructed by a cubic red-detuned optical lattice and a one-dimensional blue-detuned optical lattice. Our data demonstrate a few advantages of this bichromatic superlattice over a monochromatic lattice. One distinct advantage is that the bichromatic superlattice enables realizing the first-order superfluid to Mott-insulator phase transitions within a much wider range of magnetic fields. In addition, we discuss an apparent discrepancy between our data and the mean-field theory. We thank the National Science Foundation and the Oklahoma Center for the Advancement of Science and Technology for financial support.
Energy Technology Data Exchange (ETDEWEB)
Kumar, A.; Choudhury, S. [Electronics and Communication Engineering, Sikkim Manipal Institute of Technology, Majitar, East Sikkim 737 132 (India); Saha, S. [Electronics and Communication Engineering, Mallabhum Institute of Technology College Campus, Brajaradhanagar, P.O. Gosaipur, P.S. Bishnupur, District - Bankura 722 122 (India); Pahari, S. [Administration Department, Jadavpur University, Kolkata 700 032 (India); De, D. [Department of Computer Science Engineering, West Bengal University of Technology, BF 142, Sector 1, Kolkatta 700 064, West Bengal (India); Bhattacharya, S. [Nano Scale Device Research Laboratory, Center for Electronics Design and Technology, Indian Institute of Science, Bangalore 560 012 (India); Ghatak, K.P., E-mail: kamakhyaghatak@yahoo.co.i [Department of Electronic Science, University Calcutta, 92 Acharyya Prafulla Chandra Road, Kolkata 700 009 (India)
2010-01-01
We study the thermoelectric power under classically large magnetic field (TPM) in ultrathin films (UFs), quantum wires (QWs) of non-linear optical materials on the basis of a newly formulated electron dispersion law considering the anisotropies of the effective electron masses, the spin-orbit splitting constants and the presence of the crystal field splitting within the framework of k.p formalism. The results of quantum confined III-V compounds form the special cases of our generalized analysis. The TPM has also been studied for quantum confined II-VI, stressed materials, bismuth and carbon nanotubes (CNs) on the basis of respective dispersion relations. It is found taking quantum confined CdGeAs{sub 2}, InAs, InSb, CdS, stressed n-InSb and Bi that the TPM increases with increasing film thickness and decreasing electron statistics exhibiting quantized nature for all types of quantum confinement. The TPM in CNs exhibits oscillatory dependence with increasing carrier concentration and the signature of the entirely different types of quantum systems are evident from the plots. Besides, under certain special conditions, all the results for all the materials gets simplified to the well-known expression of the TPM for non-degenerate materials having parabolic energy bands, leading to the compatibility test.
Determination of the strain generated in InAs/InP quantum wires: prediction of nucleation sites
International Nuclear Information System (INIS)
Molina, S I; Ben, T; Sales, D L; Pizarro, J; Galindo, P L; Varela, M; Pennycook, S J; Fuster, D; Gonzalez, Y; Gonzalez, L
2006-01-01
The compositional distribution in a self-assembled InAs(P) quantum wire grown by molecular beam epitaxy on an InP(001) substrate has been determined by electron energy loss spectrum imaging. We have determined the strain and stress fields generated in and around this wire capped with a 5 nm InP layer by finite element calculations using as input the compositional map experimentally obtained. Preferential sites for nucleation of wires grown on the surface of this InP capping layer are predicted, based on chemical potential minimization, from the determined strain and stress fields on this surface. The determined preferential sites for wire nucleation agree with their experimentally measured locations. The method used in this paper, which combines electron energy loss spectroscopy, high-resolution Z contrast imaging, and elastic theory finite element calculations, is believed to be a valuable technique of wide applicability for predicting the preferential nucleation sites of epitaxial self-assembled nano-objects
Determination of the strain generated in InAs/InP quantum wires: prediction of nucleation sites
Energy Technology Data Exchange (ETDEWEB)
Molina, S I [Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cadiz, Campus RIo San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain); Ben, T [Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cadiz, Campus RIo San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain); Sales, D L [Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cadiz, Campus RIo San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain); Pizarro, J [Departamento de Lenguajes y Sistemas Informaticos, CASEM, Universidad de Cadiz, Campus RIo San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain); Galindo, P L [Departamento de Lenguajes y Sistemas Informaticos, CASEM, Universidad de Cadiz, Campus RIo San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain); Varela, M [Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Pennycook, S J [Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Fuster, D [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760 Tres Cantos, Madrid (Spain); Gonzalez, Y [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760 Tres Cantos, Madrid (Spain); Gonzalez, L [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760 Tres Cantos, Madrid (Spain)
2006-11-28
The compositional distribution in a self-assembled InAs(P) quantum wire grown by molecular beam epitaxy on an InP(001) substrate has been determined by electron energy loss spectrum imaging. We have determined the strain and stress fields generated in and around this wire capped with a 5 nm InP layer by finite element calculations using as input the compositional map experimentally obtained. Preferential sites for nucleation of wires grown on the surface of this InP capping layer are predicted, based on chemical potential minimization, from the determined strain and stress fields on this surface. The determined preferential sites for wire nucleation agree with their experimentally measured locations. The method used in this paper, which combines electron energy loss spectroscopy, high-resolution Z contrast imaging, and elastic theory finite element calculations, is believed to be a valuable technique of wide applicability for predicting the preferential nucleation sites of epitaxial self-assembled nano-objects.
Superlattices: problems and new opportunities, nanosolids
Directory of Open Access Journals (Sweden)
Tsu Raphael
2011-01-01
Full Text Available Abstract Superlattices were introduced 40 years ago as man-made solids to enrich the class of materials for electronic and optoelectronic applications. The field metamorphosed to quantum wells and quantum dots, with ever decreasing dimensions dictated by the technological advancements in nanometer regime. In recent years, the field has gone beyond semiconductors to metals and organic solids. Superlattice is simply a way of forming a uniform continuum for whatever purpose at hand. There are problems with doping, defect-induced random switching, and I/O involving quantum dots. However, new opportunities in component-based nanostructures may lead the field of endeavor to new heights. The all important translational symmetry of solids is relaxed and local symmetry is needed in nanosolids.
Magnetic modes in superlattices
International Nuclear Information System (INIS)
Oliveira, F.A.
1990-04-01
A first discussion of reciprocal propagation of magnetic modes in a superlattice is presented. In the absence of an applied external magnetic field a superllatice made of alternate layers of the type antiferromagnetic-non-magnetic materials presents effects similar to those of phonons in a dielectric superlattice. (A.C.A.S.) [pt
International Nuclear Information System (INIS)
Badi, F.; Louhibi, S.; Aced, M.R.; Mehnane, N.; Sekkal, N.
2008-05-01
This paper reports first principle investigations of structural and electronic properties of both bulk and superlattice (SL) systems of cuprous halides. The obtained structural data for bulks compares well with literature while data for SL is not compared because unavailable (to our knowledge). The electronic structure of bulks and also of (001) and (110) growth axis superlattices (SLs) are calculated and it is shown that at the reverse of the IV-IV and III-V systems, the (110) growth axis impacts the electronic structure which indicates a great influence of the d-orbital. (author)
International Nuclear Information System (INIS)
Gisi, B; Sakiroglu, S; Sokmen, İ
2016-01-01
In this work, we investigate the effects of interplay of spin–orbit interaction and in-plane magnetic fields on the electronic structure and spin texturing of parabolically confined quantum wire. Numerical results reveal that the competing effects between Rashba and Dresselhaus spin–orbit interactions and the external magnetic field lead to a complicated energy spectrum. We find that the spin texturing owing to the coupling between subbands can be modified by the strength of spin–orbit couplings as well as the magnitude and the orientation angle of the external magnetic field. (paper)
Tiutiunnyk, A.; Tulupenko, V.; Akimov, V.; Demediuk, R.; Morales, A. L.; Mora-Ramos, M. E.; Radu, A.; Duque, C. A.
2015-11-01
This work concerns theoretical study of confined electrons in a low-dimensional structure consisting of three coupled triangular GaAs/AlxGa1-xAs quantum wires. Calculations have been made in the effective mass and parabolic band approximations. In the calculations a diagonalization method to find the eigenfunctions and eigenvalues of the Hamiltonian was used. A comparative analysis of linear and nonlinear optical absorption coefficients and the relative change in the refractive index was made, which is tied to the intersubband electron transitions.
Czech Academy of Sciences Publication Activity Database
Friák, Martin; Tytko, D.; Holec, D.; Choi, P.P.; Eisenlohr, P.; Raabe, D.; Neugebauer, J.
2015-01-01
Roč. 17, č. 9 (2015), Art . n. 093004 ISSN 1367-2630 Institutional support: RVO:68081723 Keywords : ab initio * composites * elasticity * nitrides * superlattices * Young's modulus Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.570, year: 2015
InAs quantum wires on InP substrate for VCSEL applications
Lamy , Jean-Michel; Paranthoën , Cyril; Levallois , Christophe; Nakkar , Abdulhadi; Folliot , Hervé; Dehaese , Olivier; Le Corre , Alain; Loualiche , Slimane; Castany , Olivier; Dupont , Laurent
2008-01-01
International audience; Quantum dash based vertical cavity surface emitting lasers (VCSEL) on InP substrate are presented. Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a strong polarized 1.55 µm photoluminescence along the [1-10] crystallographic axis. Continuous wave laser emission is demonstrated at room temperature for the first time on a quantum dash VCSEL structure on InP susbtrate. The quantum dash VCSEL lase...
Energy Technology Data Exchange (ETDEWEB)
Duque, C.A., E-mail: cduque@fisica.udea.edu.co [Instituto de Física, Universidad de Antioquia, AA 1226, Medellín (Colombia); Mora-Ramos, M.E. [Instituto de Física, Universidad de Antioquia, AA 1226, Medellín (Colombia); Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Ave. Universidad 1001, CP 62209, Cuernavaca, Morelos, México (Mexico); Kasapoglu, E.; Ungan, F.; Yesilgul, U. [Cumhuriyet University, Physics Department, 58140 Sivas (Turkey); Sakiroglu, S. [Dokuz Eylül University, Physics Department, 35160 Buca, İzmir (Turkey); Sari, H. [Cumhuriyet University, Physics Department, 58140 Sivas (Turkey); Sökmen, I. [Dokuz Eylül University, Physics Department, 35160 Buca, İzmir (Turkey)
2013-11-15
The 1s-like and 2p-like donor impurity energy states are studied in a semiconductor quantum wire of equilateral triangular cross section as functions of the impurity position and the geometrical size of the structure. Linear and nonlinear coefficients for the optical absorption and relative refractive index change associated with 1s→2p transitions are calculated for both the x-polarization and y-polarization of the incident light. The results show a mixed effect of redshift and blueshift depending on the location of the donor atom. Also, strong nonlinear contributions to the optical absorption coefficient are obtained for both polarizations in the on-center impurity case. -- Highlights: • The 1s- and 2p-like impurity states in triangular quantum-well wires. • Optical absorption and relative refractive index changes are calculated. • Redshift and blueshift in the optical structures depend on the donor position. • Strong nonlinear contributions to the absorption coefficient have been obtained.
Coupling of single quantum emitters to plasmons propagating on mechanically etched wires
DEFF Research Database (Denmark)
Kumar, Shailesh; Huck, Alexander; Lu, Ying-Wei
2013-01-01
We demonstrate the coupling of a single nitrogen vacancy center in a nanodiamond to propagating plasmonic modes of mechanically etched silver nanowires. The mechanical etch is performed on single crystalline silver nanoplates by the tip of an atomic force microscope cantilever to produce wires...
International Nuclear Information System (INIS)
Tangarife, E.; Duque, C.A.
2011-01-01
This work is concerned with the theoretical study of the combined effects of applied electric field and hydrostatic pressure on the binding energy and impurity polarizability of a donor impurity in laterally coupled double InAs/GaAs quantum-well wires. Calculations have been made in the effective mass and parabolic band approximations and using a variational method. The results are reported for different configurations of wire and barriers widths, impurity position, and electric field and hydrostatic pressure strengths. Our results show that for symmetrical structures the binding energy is an even function of the impurity position along the growth direction of the structure. Also, we found that for hydrostatic pressure strength up to 38 kbar, the binding energy increases linearly with hydrostatic pressure, while for larger values of hydrostatic pressure the binding energy has a non-linear behavior. Finally, we found that the hydrostatic pressure can increase the coupling between the two parallel quantum-well wires. -- Research highlights: → Binding energy for donor impurity in coupled wires strongly depends on the confinement potential. → Polarizability for donor impurity in coupled wires strongly depends on the confinement potential. → Binding energy strongly depends on the direction of the applied electric field. → Polarizability strongly depends on the direction of the applied electric field. → The coupling between the two parallel wires increases with the hydrostatic pressure.
Liu, Zhe; Jiang, Liwei; Zheng, Yisong
2016-07-13
By means of a numerical diagonalization approach, we calculate the electronic structure of a three-dimensional topological insulator (3DTI) quantum wire (QW) in the presence of a magnetic field. The QW can be viewed as a 3DTI film with lateral surfaces, when its rectangular cross section has a large aspect ratio. Our calculation indicates that nonchiral edge states emerge because of the confined states at the lateral surfaces. These states completely cover the valence band region among the Landau levels, which reasonably account for the absence of the [Formula: see text] quantum Hall effect in the relevant experimental works. In an ultrathin 3DTI film, inversion between the electron-type and hole-type bands occurs, which leads to the so-called pseudo-spin Hall effect. In a 3DTI QW with a square cross section, a tilting magnetic field can establish well-defined Landau levels in all four surfaces. In such a case, the quantum Hall edge states are localized at the square corners, characterized by the linearly crossing one-dimensional band profile. And they can be shifted between the adjacent corners by simply rotating the magnetic field.
International Nuclear Information System (INIS)
Tangarife, E.; Duque, C.A.
2010-01-01
This work is concerned with the theoretical study of the combined effects of applied electric field and hydrostatic pressure on the binding energy and impurity polarizability of a donor impurity in laterally coupled double InAs/GaAs quantum-well wires. calculations have been made in the effective mass and parabolic band approximations and using a variational method. The results are reported for different configurations of wire and barriers widths, impurity position, and electric field and hydrostatic pressure strengths. Our results show that for symmetrical structures the binding energy is an even function of the impurity position along the growth direction of the structure. Also, we found that for hydrostatic pressure strength up to 38 kbar, the binding energy increases linearly with hydrostatic pressure, while for larger values of hydrostatic pressure the binding energy has a nonlinear behavior. Finally, we found that the hydrostatic pressure can increase the coupling between the two parallel quantum well wires.
Optimization of the confinement energy of quantum-wire states in T-shaped GaAs/AlxGa1-xAs structures
DEFF Research Database (Denmark)
Langbein, Wolfgang Werner; Gislason, Hannes; Hvam, Jørn Märcher
1996-01-01
We report on an optimization of the wire confinement energies of the confined electronic states at the T-shaped intersection of GaAs and AlxGa1-xAs quantum wells. These structures can be produced by the cleaved edge overgrowth technique. We present an analytical model for the confinement to give ...
Karaaslan, Y.; Gisi, B.; Sakiroglu, S.; Kasapoglu, E.; Sari, H.; Sokmen, I.
2018-02-01
We study the influence of electric field on the electronic energy band structure, zero-temperature ballistic conductivity and optical properties of double quantum wire. System described by double-well anharmonic confinement potential is exposed to a perpendicular magnetic field and Rashba and Dresselhaus spin-orbit interactions. Numerical results show up that the combined effects of internal and external agents cause the formation of crossing, anticrossing, camel-back/anomaly structures and the lateral, downward/upward shifts in the energy dispersion. The anomalies in the energy subbands give rise to the oscillation patterns in the ballistic conductance, and the energy shifts bring about the shift in the peak positions of optical absorption coefficients and refractive index changes.
International Nuclear Information System (INIS)
Ivanov, Ts; Donchev, V; Angelova, T; Cros, A; Cantarero, A; Shtinkov, N; Borissov, K; Fuster, D; Gonzalez, Y; Gonzalez, L
2010-01-01
The optical properties of multi-layer InAs/InP quantum wires (QWRs) with two different spacer thicknesses have been investigated by means of room temperature surface photovoltage (SPV) and photoluminescence (PL) spectroscopies, combined with empirical tight binding electronic structure calculations and structural data. The SPV and PL spectra reveal several features, which energy positions are in good agreement. They have been ascribed to excitonic transitions, which take place in the QWR families with heights differing by an integer number of monolayers. Comparing the experimental results with the theoretical ones, we have estimated the QWR family heights and the average atomic concentration of phosphorus in the QWRs. From the simultaneous analysis of the SPV amplitude and phase spectra, based on our vector model for SPV signal representation, a deeper understanding of the SPV results and of the mechanisms of carrier separation in the sample is obtained.
Ivanov, Ts; Donchev, V.; Angelova, T.; Cros, A.; Cantarero, A.; Shtinkov, N.; Borissov, K.; Fuster, D.; González, Y.; González, L.
2010-11-01
The optical properties of multi-layer InAs/InP quantum wires (QWRs) with two different spacer thicknesses have been investigated by means of room temperature surface photovoltage (SPV) and photoluminescence (PL) spectroscopies, combined with empirical tight binding electronic structure calculations and structural data. The SPV and PL spectra reveal several features, which energy positions are in good agreement. They have been ascribed to excitonic transitions, which take place in the QWR families with heights differing by an integer number of monolayers. Comparing the experimental results with the theoretical ones, we have estimated the QWR family heights and the average atomic concentration of phosphorus in the QWRs. From the simultaneous analysis of the SPV amplitude and phase spectra, based on our vector model for SPV signal representation, a deeper understanding of the SPV results and of the mechanisms of carrier separation in the sample is obtained.
International Nuclear Information System (INIS)
Morimoto, T; Yumoto, N; Ujiie, Y; Aoki, N; Ochiai, Y; Bird, J P
2008-01-01
We investigate the behavior of interacting one-dimensional systems using linear (close to equilibrium) and non-linear transport measurements of split-gate quantum wires of varying channel length. Our measurements reveal a remarkable resonance effect in the differential conductance, which exhibits a pronounced peak, for a narrow range of source-drain voltage, at the transition from tunneling to open transport. This peak becomes more pronounced with increase of channel length, but is rapidly suppressed by increase of temperature or (in-plane) magnetic field. We believe that these unique features may arise from the dependence of transport on the electron density of states, and suggest a phenomenological model to account for this transport behavior
Chaffin, R.J.; Dawson, L.R.; Fritz, I.J.; Osbourn, G.C.; Zipperian, T.E.
1987-06-08
A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well layers and barrier layers being selected from the group of layer pairs consisting of InGaAs/AlGaAs, InAs/InAlGaAs, and InAs/InAlAsP. The layer thicknesses of the quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice which has a superlattice conduction band energy level structure in k-vector space. The layer thicknesses of the quantum well layers are selected to provide a superlattice L/sub 2D/-valley which has a shape which is substantially more two-dimensional than that of said bulk L-valley. 2 figs.
Filippone, Michele; Brouwer, Piet
2016-01-01
Tunneling between a point contact and a one-dimensional wire is usually described with the help of a tunneling Hamiltonian that contains a delta function in position space. Whereas the leading order contribution to the tunneling current is independent of the way this delta function is regularized, higher-order corrections with respect to the tunneling amplitude are known to depend on the regularization. Instead of regularizing the delta function in the tunneling Hamiltonian, one may also obta...
Lamy , Jean-Michel; Levallois , Christophe; Nakkar , Abdulhadi; Caroff , Philippe; Paranthoen , Cyril; Dehaese , Olivier; Le Corre , Alain; Ramdane , Abderrahim; Loualiche , Slimane
2006-01-01
International audience; We propose a new type of long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of quantum wires (QWires) layers of InAs/InGaAsP grown on InP(001) and dielectrics Bragg mirrors, in order to control the in plane polarization of output power. QWires and quantum wells growth are performed by molecular beam epitaxy. QWires present a strong photoluminescence dependence to the polarization in contrast to the quantum wells, a polarization rate of 33% is...
Current responsivity of semiconductor superlattice THz-photon detectors
DEFF Research Database (Denmark)
Ignatov, Anatoly A.; Jauho, Antti-Pekka
1999-01-01
The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed for curr......The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed...... for currently available superlattice diodes show that both the magnitudes and the roll-off frequencies of the responsivity are strongly influenced by an excitation of hybrid plasma-Bloch oscillations which are found to be eigenmodes of the system in the THz-frequency band. The expected room temperature values...... of the responsivity (2–3 A/W in the 1–3 THz-frequency band) range up to several percents of the quantum efficiency e/[h-bar] omega of an ideal superconductor tunnel junction detector. Properly designed semiconductor superlattice detectors may thus demonstrate better room temperature THz-photon responsivity than...
International Nuclear Information System (INIS)
McMorrow, D.F.
1997-01-01
A review is given of recent experiments on the magnetism of rare earth superlattices. Early experiments in this field were concerned mainly with systems formed by combining a magnetic and a non-magnetic element in a superlattice structure. From results gathered on a variety of systems it has been established that the propagation of magnetic order through the non-magnetic spacer can be understood mostly on the basis of an RKKY-like model, where the strength and range of the coupling depends on the details of the conduction electron susceptibility of the spacer. Recent experiments on more complex systems indicate that this model does not provide a complete description. Examples include superlattices where the constituents can either be both magnetic, adopt different crystal structures (Fermi surfaces), or where one of the constituents has a non-magnetic singlet ground state. The results from such systems are presented and discussed in the context of the currently accepted model. (au)
Magnetism in lanthanide superlattices
DEFF Research Database (Denmark)
Goff, J.P.; Sarthour, R.S.; McMorrow, D.F.
2000-01-01
Neutron diffraction studies of heavy rare-earth superlattices have revealed the stabilization of novel magnetic phases chat are not present in bulk materials. The most striking result is the propagation of the magnetic ordering through nonmagnetic spacer materials. Here we describe some recent X......-ray magnetic resonant scattering studies of light rare-earth superlattices, which illuminate the mechanism of interlayer coupling, and provide access to different areas of Physics. such as the interplay between superconductivity and magnetism. Magnetic X-ray diffraction is found to be particularly well suited...... to the study of the modulated magnetic structures in superlattices, and provides unique information on the conduction-electron spin-density wave responsible for the propagation of magnetic order. (C) 2000 Elsevier Science B.V. All rights reserved....
Debray, Philippe; Shorubalko, Ivan; Xu, Hongqi
2007-03-01
We have studied polarized spin transport in a device consisting of three quantum point contacts (QPCs) in series made on InGaAs/InP quantum-well (QW) structures. The QPCs were created by independent pairs of side gates, each pair for one QPC. By adjusting the bias voltages of the side gates, the widths of the QPCs are independently tuned to have transport in the fundamental mode. An external magnetic field of a few T causes spin splitting of the lowest one-dimensional (1D) subbands. The widths of the end QPCs are adjusted to position the Fermi level in the spin-split energy gap, while that of the central QPC is kept wide enough to populate both spin-split bands. Measurement of the conductance of the end QPCs at low temperatures (spinFET.
Absorption coefficients for interband optical transitions in a strained InAs1−xPx/InP quantum wire
International Nuclear Information System (INIS)
Saravanan, S.; John Peter, A.; Lee, Chang Woo
2014-01-01
Excitons confined in an InAs 1−x P x /InP (x=0.2) quantum well wire are studied in the presence of magnetic field strength. Numerical calculations are carried out using variational approach within the single band effective mass approximation. The compressive strain contribution to the confinement potential is included throughout the calculations. The energy difference of the ground and the first excited state is investigated in the influence of magnetic field strength taking into account the geometrical confinement effect. The magnetic field induced optical band as a function of wire radius is investigated in the InAs 0.8 P 0.2 /InP quantum well wire. The valence-band anisotropy is included in our theoretical model by employing different hole masses in different spatial directions. The optical gain as a function of incident photon energy is computed in the presence of magnetic field strength. The corresponding 1.55 μm wavelength is achieved for 40 Å InAs 0.8 P 0.2 /InP quantum well wire. We hope that the results could be used for the potential applications in fiber optic communications. -- Highlights: • Magnetic field induced excitons confined in a InAs 1−x P x /InP (x=0.2) quantum well wire are studied. • The compressive strain is included throughout the calculations. • The energy difference of the ground and the first excited state is investigated in the presence of magnetic field strength. • The magnetic field induced optical band with the geometrical confinement is studied. • The optical gain with the photon energy is computed in the presence of magnetic field strength
Electronic structure of superlattices
International Nuclear Information System (INIS)
Altarelli, M.
1987-01-01
Calculations of electronic states in semiconductor superlattices are briefly reviewed, with emphasis on the envelope-function method and on comparison with experiments. The energy levels in presence of external magnetic fields are discussed and compared to magneto-optical experiments. (author) [pt
Magnetic rare earth superlattices
DEFF Research Database (Denmark)
Majkrzak, C.F.; Kwo, J.; Hong, M.
1991-01-01
Advances in molecular beam epitaxy deposition techniques have recently made it possible to grow, an atomic plane at a time, single crystalline superlattices composed of alternating layers of a magnetic rare earth, such as Gd, Dy, Ho, or Er, and metallic Y, which has an identical chemical structure...
Stark effect in finite-barrier quantum wells, wires, and dots
International Nuclear Information System (INIS)
Pedersen, Thomas Garm
2017-01-01
The properties of confined carriers in low-dimensional nanostructures can be controlled by external electric fields and an important manifestation is the Stark shift of quantized energy levels. Here, a unifying analytic theory for the Stark effect in arbitrary dimensional nanostructures is presented. The crucial role of finite potential barriers is stressed, in particular, for three-dimensional confinement. Applying the theory to CdSe quantum dots, finite barriers are shown to improve significantly the agreement with experiments. (paper)
Optical spin-1 chain and its use as a quantum-computational wire
International Nuclear Information System (INIS)
Darmawan, Andrew S.; Bartlett, Stephen D.
2010-01-01
Measurement-based quantum computing, a powerful alternative to the standard circuit model, proceeds using only local adaptive measurements on a highly entangled resource state of many spins on a graph or lattice. Along with the canonical cluster state, the valence-bond solid ground state on a chain of spin-1 particles, studied by Affleck, Kennedy, Lieb, and Tasaki (AKLT), is such a resource state. We propose a simulation of this AKLT state using linear optics, wherein we can make use of the high-fidelity projective measurements that are commonplace in quantum-optical experiments, and describe how quantum logic gates can be performed on this chain. In our proposed implementation, the spin-1 particles comprising the AKLT state are encoded on polarization biphotons: three-level systems consisting of pairs of polarized photons in the same spatio-temporal mode. A logical qubit encoded on the photonic AKLT state can be initialized, read out, and have an arbitrary single-qubit unitary applied to it by performing projective measurements on the constituent biphotons. For MBQC, biphoton measurements are required which cannot be deterministically performed using only linear optics and photodetection.
Electron dynamics in intentionally disordered semiconductor superlattices
International Nuclear Information System (INIS)
Diez, E.; Sanchez, A.; Dominguez-Adame, F.; Berman, G.P.
1996-01-01
We study the dynamical behavior of disordered quantum well-based semiconductor superlattices where the disorder is intentional and short-range correlated. We show that, whereas the transmission time of a particle grows exponentially with the number of wells in an usual disordered superlattice for any value of the incident particle energy, for specific values of the incident energy this time increases linearly when correlated disorder is included. As expected, those values of the energy coincide with a narrow subband of extended states predicted by the static calculations of Domacute inguez-Adame et al.[Phys. Rev. B 51, 14359 (1994)]; such states are seen in our dynamical results to exhibit a ballistic regime, very close to the WKB approximation of a perfect superlattice. Fourier transform of the output signal for an incident Gaussian wave packet reveals a dramatic filtering of the original signal, which makes us confident that devices based on this property may be designed and used for nanotechnological applications. This is more so in view of the possibility of controlling the output band using a dc-electric field, which we also discuss. In the conclusion we summarize our results and present an outlook for future developments arising from this work. copyright 1996 The American Physical Society
Materials science and technology strained-layer superlattices materials science and technology
Pearsall, Thomas P; Willardson, R K; Pearsall, Thomas P
1990-01-01
The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting ...
Energy Technology Data Exchange (ETDEWEB)
Lamy, J.M.; Levallois, C.; Nakhar, A.; Caroff, P.; Paranthoen, C.; Piron, R.; Le Corre, A.; Loualiche, S. [UMR C6082 FOTON - INSA de Rennes, 20 Avenue des Buttes de Coesmes, 35043 Rennes (France); Ramdane, A. [Laboratoire de Photonique et Nanostructures, CNRS UPR20, Route de Nozay, 91460 Marcoussis (France)
2007-06-15
We propose a new type of long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of quantum wires (QWires) layers of InAs/InGaAsP grown on InP(001) and dielectrics Bragg mirrors, in order to control the in plane polarization of output power. QWires and quantum wells growth are performed by molecular beam epitaxy. QWires present a strong photoluminescence dependence to the polarization in contrast to the quantum wells, a polarization rate of 33% is measured. The optically pumped VCSEL is fabricated by metallic bonding, which allows the deposition of two dielectrics Bragg mirrors. The VCSEL with an active region based on InGaAs/InGaAsP quantum wells exhibits a lasing emission at 1.578 {mu}m at room temperature under continuous wave operation. The VCSEL with an active region based on quantum wires shows a luminescence at 1.53 {mu}m strongly polarized along the direction [1 anti 10] which is promising for the stabilization of in plane polarization of VCSEL emission. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
International Nuclear Information System (INIS)
Lamy, J.M.; Levallois, C.; Nakhar, A.; Caroff, P.; Paranthoen, C.; Piron, R.; Le Corre, A.; Loualiche, S.; Ramdane, A.
2007-01-01
We propose a new type of long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of quantum wires (QWires) layers of InAs/InGaAsP grown on InP(001) and dielectrics Bragg mirrors, in order to control the in plane polarization of output power. QWires and quantum wells growth are performed by molecular beam epitaxy. QWires present a strong photoluminescence dependence to the polarization in contrast to the quantum wells, a polarization rate of 33% is measured. The optically pumped VCSEL is fabricated by metallic bonding, which allows the deposition of two dielectrics Bragg mirrors. The VCSEL with an active region based on InGaAs/InGaAsP quantum wells exhibits a lasing emission at 1.578 μm at room temperature under continuous wave operation. The VCSEL with an active region based on quantum wires shows a luminescence at 1.53 μm strongly polarized along the direction [1 anti 10] which is promising for the stabilization of in plane polarization of VCSEL emission. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
International Nuclear Information System (INIS)
Felici, M.; Pettinari, G.; Polimeni, A.; Lavenuta, G.; Tartaglini, E.; De Luca, M.; Capizzi, M.; Carron, R.; Gallo, P.; Dwir, B.; Rudra, A.; Kapon, E.; Notargiacomo, A.; Fekete, D.; Christianen, P. C. M.; Maan, J. C.
2013-01-01
The properties of InGaAsN V-groove quantum wires (QWRs) –both untreated and irradiated with atomic hydrogen– are probed via micro-magneto-photoluminescence (PL) and polarization-dependent PL. As generally observed in dilute-nitride materials, H irradiation is found to fully passivate nitrogen, thus allowing us to accurately assess –and to precisely control– the effects of N incorporation in the QWRs
International Nuclear Information System (INIS)
Fu Xi; Chen Zeshun; Zhong Feng; Zhou Guanghui
2010-01-01
We investigate theoretically the spin transport of a quantum wire (QW) with weak Rashba and Dresselhaus spin-orbit coupling (SOC) nonadiabatically connected to two normal leads. Using scattering matrix method and Landauer-Buettiker formula within effective free-electron approximation, we have calculated spin-dependent conductances G ↑ and G ↓ , total conductance G and spin polarization P z for a hard-wall potential confined QW. It is demonstrated that, the SOCs induce the splitting of G ↑ and G ↓ and form spin polarization P z . Moreover, the conductances present quantized plateaus, the plateaus and P z show oscillation structures near the subband edges. Furthermore, with the increase of QW width a strong spin polarization (P z ∼1) gradually becomes weak, which can be used to realize a spin filter. When the two SOCs coexist, the total conductance presents an isotropy transport due to the Rashba and Dresselhaus Hamiltonians being fixed, and the alteration of two SOCs strength ratio changes the sign of spin polarization. This may provide a way of realizing the expression of unit information by tuning gate voltage.
Wang, Fudong; Buhro, William E
2017-12-26
Crystal-phase control is one of the most challenging problems in nanowire growth. We demonstrate that, in the solution-phase catalyzed growth of colloidal cadmium telluride (CdTe) quantum wires (QWs), the crystal phase can be controlled by manipulating the reaction chemistry of the Cd precursors and tri-n-octylphosphine telluride (TOPTe) to favor the production of either a CdTe solute or Te, which consequently determines the composition and (liquid or solid) state of the Bi x Cd y Te z catalyst nanoparticles. Growth of single-phase (e.g., wurtzite) QWs is achieved only from solid catalysts (y ≪ z) that enable the solution-solid-solid growth of the QWs, whereas the liquid catalysts (y ≈ z) fulfill the solution-liquid-solid growth of the polytypic QWs. Factors that affect the precursor-conversion chemistry are systematically accounted for, which are correlated with a kinetic study of the composition and state of the catalyst nanoparticles to understand the mechanism. This work reveals the role of the precursor-reaction chemistry in the crystal-phase control of catalytically grown colloidal QWs, opening the possibility of growing phase-pure QWs of other compositions.
Superlattice Microstructured Optical Fiber
Tse, Ming-Leung Vincent; Liu, Zhengyong; Cho, Lok-Hin; Lu, Chao; Wai, Ping-Kong Alex; Tam, Hwa-Yaw
2014-01-01
A generic three-stage stack-and-draw method is demonstrated for the fabrication of complex-microstructured optical fibers. We report the fabrication and characterization of a silica superlattice microstructured fiber with more than 800 rhomboidally arranged air-holes. A polarization-maintaining fiber with a birefringence of 8.5 × 10−4 is demonstrated. The birefringent property of the fiber is found to be highly insensitive to external environmental effects, such as pressure. PMID:28788693
Thermoelectric transport in superlattices
Energy Technology Data Exchange (ETDEWEB)
Reinecke, T L; Broido, D A
1997-07-01
The thermoelectric transport properties of superlattices have been studied using an exact solution of the Boltzmann equation. The role of heat transport along the barrier layers, of carrier tunneling through the barriers, of valley degeneracy and of the well width and energy dependences of the carrier-phonon scattering rates on the thermoelectric figure of merit are given. Calculations are given for Bi{sub 2}Te{sub 3} and for PbTe, and the results of recent experiments are discussed.
International Nuclear Information System (INIS)
Alonso-Álvarez, D.; Thomas, T.; Führer, M.; Hylton, N. P.; Ekins-Daukes, N. J.; Lackner, D.; Philipps, S. P.; Bett, A. W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.
2014-01-01
Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1 μs, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.
Amaral, Barbara; Cabello, Adán; Cunha, Marcelo Terra; Aolita, Leandro
2018-03-01
Contextuality is a fundamental feature of quantum theory necessary for certain models of quantum computation and communication. Serious steps have therefore been taken towards a formal framework for contextuality as an operational resource. However, the main ingredient of a resource theory—a concrete, explicit form of free operations of contextuality—was still missing. Here we provide such a component by introducing noncontextual wirings: a class of contextuality-free operations with a clear operational interpretation and a friendly parametrization. We characterize them completely for general black-box measurement devices with arbitrarily many inputs and outputs. As applications, we show that the relative entropy of contextuality is a contextuality monotone and that maximally contextual boxes that serve as contextuality bits exist for a broad class of scenarios. Our results complete a unified resource-theoretic framework for contextuality and Bell nonlocality.
International Nuclear Information System (INIS)
Safarpour, Gh.; Barati, M.; Zamani, A.; Niknam, E.
2014-01-01
The binding energy as well as the linear, third-order nonlinear and total optical absorption coefficient and refractive index changes of an off-center hydrogenic donor impurity in an InAs spherical quantum dot placed at the center of a GaAs cylindrical nano-wire have been investigated. In this regard, the effective-mass approximation approach is considered and eigenvalues and corresponding eigenfunctions are calculated via the finite element method. The binding energy is plotted as a function of the dot size and impurity position along with optical properties as a function of photon energy. In this study two different directions have been considered for impurity position, along the nano-wire axis and perpendicular to it. It has been found that the binding energy, absorption coefficient and refractive index changes are impressively affected not only by the dot radius but also by the position of the impurity and its direction. Additionally, the optical saturation can be tuned by the direction of the impurity and incident optical intensity. -- Highlights: • We consider spherical quantum dot located at the center of a cylindrical nano-wire. • An off-center hydrogenic donor impurity is considered in the system. • Binding energy is affected by orientation of impurity and its distance from center. • Saturation depends on the orientation of impurity position. • By shifting impurity position, orientation and dot radius blue- and red-shifts appear
Magnetic Rare-Earth Superlattices
DEFF Research Database (Denmark)
Majkrzak, C.F.; Gibbs, D.; Böni, P.
1988-01-01
The magnetic structures of several single‐crystal, magnetic rare‐earth superlattice systems grown by molecular‐beam epitaxy are reviewed. In particular, the results of recent neutron diffraction investigations of long‐range magnetic order in Gd‐Y, Dy‐Y, Gd‐Dy, and Ho‐Y periodic superlattices...... are presented. In the Gd‐Y system, an antiphase domain structure develops for certain Y layer spacings, whereas modified helical moment configurations are found to occur in the other systems, some of which are commensurate with the chemical superlattice wavelength. References are made to theoretical interaction...
Al Saqri, Noor alhuda; Felix, Jorlandio F.; Aziz, Mohsin; Kunets, Vasyl P.; Jameel, Dler Adil; Taylor, David; Henini, M.; Abd El-sadek, Mahmmoud S.; Furrow, Colin; Ware, Morgan E.; Benamara, Mourad; Mortazavi, Mansour; Salamo, Gregory
2016-01-01
InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current–voltage (I–V) and capacitance–voltage (C-V) techniques, were found to change with temperature over a wide range of 20–340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the ...
International Nuclear Information System (INIS)
Zhang Tongyi; Zhao Wei; Liu Xueming
2009-01-01
We have made a thorough theoretical investigation of the interplay of spin-orbit interactions (SOIs) resulting from Rashba, Dresselhaus and the lateral parabolic confining potential on the energy dispersion relation of the spin subbands in a parabolic quantum wire. The influence of an applied external magnetic field is also discussed. We show the interplay of different types of SOI, as well as the Zeeman effect, leads to rather complex and intriguing electrosubbands for different spin branches. The effect of different coupling strengths and different magnetic field strengths is also investigated.
Epitaxial growth of quantum rods with high aspect ratio and compositional contrast
International Nuclear Information System (INIS)
Li, L. H.; Patriarche, G.; Fiore, A.
2008-01-01
The epitaxial growth of quantum rods (QRs) on GaAs was investigated. It was found that GaAs thickness in the GaAs/InAs superlattice used for QR formation plays a key role in improving the QR structural properties. Increasing the GaAs thickness results in both an increased In compositional contrast between the QRs and surrounding layer, and an increased QR length. QRs with an aspect ratio of up to 10 were obtained, representing quasiquantum wires in a GaAs matrix. Due to modified confinement and strain potential, such nanostructure is promising for controlling gain polarization
International Nuclear Information System (INIS)
Pavelyev, D. G.; Vasilev, A. P.; Kozlov, V. A.; Koschurinov, Yu. I.; Obolenskaya, E. S.; Obolensky, S. V.; Ustinov, V. M.
2016-01-01
The electron transport in superlattices based on GaAs/AlAs heterostructures with a small number of periods (6 periods) is calculated by the Monte Carlo method. These superlattices are used in terahertz diodes for the frequency stabilization of quantum cascade lasers in the range up to 4.7 THz. The band structure of superlattices with different numbers of AlAs monolayers is considered and their current–voltage characteristics are calculated. The calculated current–voltage characteristics are compared with the experimental data. The possibility of the efficient application of these superlattices in the THz frequency range is established both theoretically and experimentally.
Dissipative chaos in semiconductor superlattices
Directory of Open Access Journals (Sweden)
F. Moghadam
2008-03-01
Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.
Monolayer atomic crystal molecular superlattices
Wang, Chen; He, Qiyuan; Halim, Udayabagya; Liu, Yuanyue; Zhu, Enbo; Lin, Zhaoyang; Xiao, Hai; Duan, Xidong; Feng, Ziying; Cheng, Rui; Weiss, Nathan O.; Ye, Guojun; Huang, Yun-Chiao; Wu, Hao; Cheng, Hung-Chieh; Shakir, Imran; Liao, Lei; Chen, Xianhui; Goddard, William A., III; Huang, Yu; Duan, Xiangfeng
2018-03-01
Artificial superlattices, based on van der Waals heterostructures of two-dimensional atomic crystals such as graphene or molybdenum disulfide, offer technological opportunities beyond the reach of existing materials. Typical strategies for creating such artificial superlattices rely on arduous layer-by-layer exfoliation and restacking, with limited yield and reproducibility. The bottom-up approach of using chemical-vapour deposition produces high-quality heterostructures but becomes increasingly difficult for high-order superlattices. The intercalation of selected two-dimensional atomic crystals with alkali metal ions offers an alternative way to superlattice structures, but these usually have poor stability and seriously altered electronic properties. Here we report an electrochemical molecular intercalation approach to a new class of stable superlattices in which monolayer atomic crystals alternate with molecular layers. Using black phosphorus as a model system, we show that intercalation with cetyl-trimethylammonium bromide produces monolayer phosphorene molecular superlattices in which the interlayer distance is more than double that in black phosphorus, effectively isolating the phosphorene monolayers. Electrical transport studies of transistors fabricated from the monolayer phosphorene molecular superlattice show an on/off current ratio exceeding 107, along with excellent mobility and superior stability. We further show that several different two-dimensional atomic crystals, such as molybdenum disulfide and tungsten diselenide, can be intercalated with quaternary ammonium molecules of varying sizes and symmetries to produce a broad class of superlattices with tailored molecular structures, interlayer distances, phase compositions, electronic and optical properties. These studies define a versatile material platform for fundamental studies and potential technological applications.
Indian Academy of Sciences (India)
With a brief introduction to one-dimensional channels and conductance quantization in mesoscopic systems, we discuss some recent experimental puzzles in these systems, which include reduction of quantized conductances and an interesting odd–even effect in the presence of an in-plane magnetic ﬁeld. We then discuss ...
Quantum optics with quantum dots in photonic nanowires
DEFF Research Database (Denmark)
We will review recent studies performed on InAs quantum dots embedded in GaAs photonic wires, which highlight the strong interest of the photonic wire geometry for quantum optics experiments and quantum optoelectronic devices.......We will review recent studies performed on InAs quantum dots embedded in GaAs photonic wires, which highlight the strong interest of the photonic wire geometry for quantum optics experiments and quantum optoelectronic devices....
Ezzedini, Maher; Hidouri, Tarek; Alouane, Mohamed Helmi Hadj; Sayari, Amor; Shalaan, Elsayed; Chauvin, Nicolas; Sfaxi, Larbi; Saidi, Faouzi; Al-Ghamdi, Ahmed; Bru-Chevallier, Catherine; Maaref, Hassen
2017-12-01
This paper reports on experimental and theoretical investigations of atypical temperature-dependent photoluminescence properties of multi-stacked InAs quantum dots in close proximity to InGaAs strain-relief underlying quantum well. The InAs/InGaAs/GaAs QD heterostructure was grown by solid-source molecular beam epitaxy (SS-MBE) and investigated via photoluminescence (PL), spectroscopic ellipsometry (SE), and picosecond time-resolved photoluminescence. Distinctive double-emission peaks are observed in the PL spectra of the sample. From the excitation power-dependent and temperature-dependent PL measurements, these emission peaks are associated with the ground-state transition from InAs QDs with two different size populations. Luminescence measurements were carried out as function of temperature in the range of 10-300 K by the PL technique. The low temperature PL has shown an abnormal emission which appeared at the low energy side and is attributed to the recombination through the deep levels. The PL peak energy presents an anomalous behavior as a result of the competition process between localized and delocalized carriers. We propose the localized-state ensemble model to explain the usual photoluminescence behaviors. The quantitative study shows that the quantum well continuum states act as a transit channel for the redistribution of thermally activated carriers. We have determined the localization depth and its effect on the application of the investigated heterostructure for photovoltaic cells. The model gives an overview to a possible amelioration of the InAs/InGaAs/GaAs QDs SCs properties based on the theoretical calculations.
Soliton excitation in superlattice
International Nuclear Information System (INIS)
Mensah, S.Y.; Allotey, F.K.A.; Mensah, N.G.; Twum, A.K.
1995-10-01
Excitation of soliton in superlattice has been investigated theoretically. It is noted that the soliton velocity u and the length L depend on the amplitude E 0 and that an increase in the amplitude causes soliton width L to approach zero and the velocity u to that of light V in homogeneous medium. The characteristic parameters of soliton u, L and E 0 are related by expression u/L E 0 = ed/2(h/2π) which is constant depending only on the SL period d. It is observed also that the soliton has both energy E = 8V 2 (1 - u 2 /V 2 ) -1/2 and momentum P = u/V 2 E which makes it behave as relativistic free particle with rest energy 8V 2 . Its interaction with electrons can cause the soliton electric effect in SL. (author). 27 refs
International Nuclear Information System (INIS)
Fuster, David; Martinez-Pastor, Juan; Gonzalez, Luisa; Gonzalez, Yolanda
2006-01-01
In the present work we study the influence of stacking self-assembled InAs quantum wires (QWRs) on the emission wavelength and the excitonic recombination dynamics. The reduction in the InP spacer layer thickness, d(InP), produces both a size filtering effect towards large wire ensembles and an increase in the vertical coupling for electrons and holes along the stack direction. The different vertical coupling for electrons and holes induces a different behaviour in the exciton recombination dynamics, depending on the InP spacer layer thickness: weak electron coupling and negligible hole coupling for d(InP) > 10 nm, intermediate electron coupling and weak hole coupling for 5 nm ≤ d(InP) ≤ 10 nm and strong electron coupling and moderate hole coupling for d(InP) < 5 nm. Such exciton dynamics have been established by comparing the experimental time decay results with a multi-quantum well model accounting for the vertical carrier coupling
Rocksalt nitride metal/semiconductor superlattices: A new class of artificially structured materials
Saha, Bivas; Shakouri, Ali; Sands, Timothy D.
2018-06-01
Artificially structured materials in the form of superlattice heterostructures enable the search for exotic new physics and novel device functionalities, and serve as tools to push the fundamentals of scientific and engineering knowledge. Semiconductor heterostructures are the most celebrated and widely studied artificially structured materials, having led to the development of quantum well lasers, quantum cascade lasers, measurements of the fractional quantum Hall effect, and numerous other scientific concepts and practical device technologies. However, combining metals with semiconductors at the atomic scale to develop metal/semiconductor superlattices and heterostructures has remained a profoundly difficult scientific and engineering challenge. Though the potential applications of metal/semiconductor heterostructures could range from energy conversion to photonic computing to high-temperature electronics, materials challenges primarily had severely limited progress in this pursuit until very recently. In this article, we detail the progress that has taken place over the last decade to overcome the materials engineering challenges to grow high quality epitaxial, nominally single crystalline metal/semiconductor superlattices based on transition metal nitrides (TMN). The epitaxial rocksalt TiN/(Al,Sc)N metamaterials are the first pseudomorphic metal/semiconductor superlattices to the best of our knowledge, and their physical properties promise a new era in superlattice physics and device engineering.
CdSe quantum dot in vertical ZnSe nanowire and photonic wire for efficient single-photon emission
DEFF Research Database (Denmark)
Cremel, Thibault; Bellet-Amalric, Edith; Cagnon, Laurent
conformal dielectric coating of Al2O3 on the NW-QDs using Atomic Layer Deposition so that a photonic wire is formed with the CdSe QD deterministically positioned on its axis. The collection enhancement effect is studied by measuring the emission (with pulse excitation, at saturation intensity) of single...
Rossi, Mariana; Ceriotti, Michele; Manolopoulos, David
Diffusion of H+ and OH- along water wires provides an efficient mechanism for charge transport that is exploited by biological systems and shows promise in technological applications. However, what is lacking for a better control and design of these systems is a thorough theoretical understanding of the diffusion process at the atomic scale. Here we consider H+ and OH- in finite water wires using density functional theory. We employ machine learning techniques to identify the charged species, thus obtaining an agnostic definition of the charge. We employ thermostated ring polymer molecular dynamics and extract a ``universal'' diffusion coefficient from simulations with different wire sizes by considering Langevin dynamics on the potential of mean force of the charged species. In the classical case, diffusion coefficients depend significantly on the potential energy surface, in particular on how dispersion forces modulate O-O distances. NQEs, however, make the diffusion less sensitive to the underlying potential and geometry of the wire, presumably making them more robust to environment fluctuations.
Nanostructures: Physics and Technology
National Research Council Canada - National Science Library
2001-01-01
... atomic-scale probing techniques, Quantum wells and superlattices, Quantum wires and quantum dots, Tunneling phenomena, General properties of low dimensional structures, Spin related phenomena, Quantum...
Theory and simulation of photogeneration and transport in Si-SiOx superlattice absorbers
Directory of Open Access Journals (Sweden)
Aeberhard Urs
2011-01-01
Full Text Available Abstract Si-SiOx superlattices are among the candidates that have been proposed as high band gap absorber material in all-Si tandem solar cell devices. Owing to the large potential barriers for photoexited charge carriers, transport in these devices is restricted to quantum-confined superlattice states. As a consequence of the finite number of wells and large built-in fields, the electronic spectrum can deviate considerably from the minibands of a regular superlattice. In this article, a quantum-kinetic theory based on the non-equilibrium Green's function formalism for an effective mass Hamiltonian is used for investigating photogeneration and transport in such devices for arbitrary geometry and operating conditions. By including the coupling of electrons to both photons and phonons, the theory is able to provide a microscopic picture of indirect generation, carrier relaxation, and inter-well transport mechanisms beyond the ballistic regime.
Effect of anisotropy on the magnon energy gap in a two-layer ferromagnetic superlattice
International Nuclear Information System (INIS)
Qiu Rongke; Liang Jing; Li Qingfeng; Zhang Zhidong; Song Panpan; Hong Xiaomin
2009-01-01
The magnon energy bands or spectra in a two-layer ferromagnetic superlattice are studied. It is found that a modulated energy gap exists in the magnon energy band along K x direction perpendicular to the superlattice plane, which is different from the optical magnon gap at K x =0. The anisotropy, the spin quantum numbers and the interlayer exchange couplings all affect the magnon energy gap. If the anisotropy exists, there will be no acoustic energy branch in the system. There is a competition effect of the anisotropy and the spin quantum number on the magnon energy gap. The competition achieves a balance at the zero energy gap, at which the symmetry of the system is higher. The two energy spectra of the two-layer ferromagnetic superlattice are lowered with increasing temperature.
International Nuclear Information System (INIS)
Lima, C P; Lima, F M S; Fonseca, A L A; Nunes, O A C
2011-01-01
The influence of a uniform magnetic field on the density of states (DoS) for carriers confined in a cylindrical semiconductor quantum wire irradiated by a monochromatic, linearly polarized, intense laser field is computed here non-perturbatively, following the Green's function scheme introduced by some of the authors in a recent work (Lima et al 2009 Solid State Commun. 149 678). Besides the known changes in the DoS provoked by an intense terahertz laser field-namely, a significant reduction and the appearance of Franz-Keldysh-like oscillations-our model reveals that the inclusion of a longitudinal magnetic field induces additional blueshifts on the energy levels of the allowed states. Our results show that the increase of the blueshifts with the magnitude of the magnetic field depends only on the azimuthal quantum number m (m=0, 1, 2, ...), being more pronounced for states with higher values of m, which leads to some energy crossovers. For all states, we have obtained, even in the absence of a magnetic field, a localization effect that leads to a transition in the DoS from the usual profile of quasi-1D systems to a peaked profile typical of quasi-0D systems, as e.g. those found for electrons confined in a quantum dot.
Topotactic interconversion of nanoparticle superlattices.
Macfarlane, Robert J; Jones, Matthew R; Lee, Byeongdu; Auyeung, Evelyn; Mirkin, Chad A
2013-09-13
The directed assembly of nanoparticle building blocks is a promising method for generating sophisticated three-dimensional materials by design. In this work, we have used DNA linkers to synthesize nanoparticle superlattices that have greater complexity than simple binary systems using the process of topotactic intercalation-the insertion of a third nanoparticle component at predetermined sites within a preformed binary lattice. Five distinct crystals were synthesized with this methodology, three of which have no equivalent in atomic or molecular crystals, demonstrating a general approach for assembling highly ordered ternary nanoparticle superlattices whose structures can be predicted before their synthesis. Additionally, the intercalation process was demonstrated to be completely reversible; the inserted nanoparticles could be expelled into solution by raising the temperature, and the ternary superlattice could be recovered by cooling.
Dielectric function of semiconductor superlattice
International Nuclear Information System (INIS)
Qin Guoyi.
1990-08-01
We present a calculation of the dielectric function for semiconductor GaAs/Ga 1-x Al x As superlattice taking account of the extension of the electron envelope function and the difference of both the dielectric constant and width between GaAs and Ga 1-x Al x As layers. In the appropriate limits, our results exactly reduce to the well-known results of the quasi two-dimensional electron gas obtained by Lee and Spector and of the period array of two-dimensional electron layers obtained by Das Sarma and Quinn. By means of the dielectric function of the superlattice, the dispersion relation of the collective excitation and the screening property of semiconductor superlattice are discussed and compared with the results of the quasi two-dimensional system and with the results of the periodic array of the two-dimensional electron layers. (author). 4 refs, 3 figs
Perovskite Superlattices as Tunable Microwave Devices
Christen, H. M.; Harshavardhan, K. S.
2003-01-01
Experiments have shown that superlattices that comprise alternating epitaxial layers of dissimilar paraelectric perovskites can exhibit large changes in permittivity with the application of electric fields. The superlattices are potentially useful as electrically tunable dielectric components of such microwave devices as filters and phase shifters. The present superlattice approach differs fundamentally from the prior use of homogeneous, isotropic mixtures of base materials and dopants. A superlattice can comprise layers of two or more perovskites in any suitable sequence (e.g., ABAB..., ABCDABCD..., ABACABACA...). Even though a single layer of one of the perovskites by itself is not tunable, the compositions and sequence of the layers can be chosen so that (1) the superlattice exhibits low microwave loss and (2) the interfacial interaction between at least two of the perovskites in the superlattice renders either the entire superlattice or else at least one of the perovskites tunable.
International Nuclear Information System (INIS)
Scheid, Matthias; Adagideli, İnanç; Richter, Klaus; Nitta, Junsaku
2009-01-01
We investigate the transport properties of narrow quantum wires realized in disordered two-dimensional electron gases in the presence of k-linear Rashba and Dresselhaus spin–orbit interaction, and an applied in-plane magnetic field. Building on previous work (Scheid et al 2008 Phys. Rev. Lett. 101 266401), we find that in addition to the conductance, the universal conductance fluctuations also feature anisotropy with respect to the magnetic field direction. This anisotropy can be explained solely from the symmetries exhibited by the Hamiltonian as well as the relative strengths of the Rashba and Dresselhaus spin–orbit interaction and thus can be utilized to detect this ratio from purely electrical measurements
High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)
International Nuclear Information System (INIS)
Wang Yuanli; Jin, P.; Ye, X.L.; Zhang, C.L.; Shi, G.X.; Li, R.Y.; Chen, Y.H.; Wang, Z.G.
2006-01-01
Highly uniform InAs quantum wires (QWRs) have been obtained on the In 0.5 Al 0.5 As buffer layer grown on the InP substrate 8 (convolutionsign) off (001) towards (111) by molecular-beam epitaxy. The quasi-periodic composition modulation was spontaneously formed in the In 0.5 Al 0.5 As buffer layer on this misoriented InP (001). The width and period of the In-rich bands are about 10 and 40 nm, respectively. The periodic In-rich bands play a major role in the sequent InAs QWRs growth and the InAs QWRs are well positioned atop In-rich bands. The photoluminescence (PL) measurements showed a significant reduction in full width at half maximum and enhanced PL efficiency for InAs QWRs on misoriented InP(001) as compared to that on normal InP(001)
Energy Technology Data Exchange (ETDEWEB)
Correa, J. D. [Departamento de Ciencias Básicas, Universidad de Medellín, Medellín (Colombia); Mora-Ramos, M. E., E-mail: memora@uaem.mx [Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos (Mexico); Duque, C. A. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia)
2014-06-07
We report a study on the optical absorption coefficient associated to hydrogenic impurity interstate transitions in zinc-blende GaN quantum wires of cylindrical shape taking into account the effects of externally applied static electric and magnetic fields. The electron states emerge within the effective mass approximation, via the exact diagonalization of the donor-impurity Hamiltonian with parabolic confinement and external field effects. The nonlinear optical absorption is calculated using a recently derived expression for the dielectric susceptibility, obtained via a nonperturbative solution of the density-matrix Bloch equation. Our results show that this treatment eliminates not only the intensity-dependent bleaching effect but also the change in sign of the nonlinear contribution due to the combined effect of asymmetric impurity location and the applied electric field.
Energy Technology Data Exchange (ETDEWEB)
Liu, K M; Juang, C H; Hsu, S Y [Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Umansky, V, E-mail: syhsu@mail.nctu.edu.t [Braun Center for Submicron Research, Weizmann Institute of Science, Rehovot 76100 (Israel)
2010-10-06
We have studied the linear conductance and source-drain bias spectroscopies of clean and disordered quantum wires (QWs) against thermal cycling and lateral shifting, which change the impurity configuration. Conductance quantization and the zero bias anomaly (ZBA) are robust in clean QWs. In contrast, disordered QWs show complexities in the ways of conductance resonance, peak splitting and trace crossing in source-drain bias spectroscopies. The experimental results and theoretical predictions are in congruence. Moreover, the resonant state arising from the impurities results in either a single peak or double-splitting peaks in the spectroscopies from the detailed impurity configurations. The resonant splitting peaks are found to influence the ZBA, indicating that a clean QW is crucial for investigating the intrinsic characteristics of the ZBA of QWs.
International Nuclear Information System (INIS)
Liu, K M; Juang, C H; Hsu, S Y; Umansky, V
2010-01-01
We have studied the linear conductance and source-drain bias spectroscopies of clean and disordered quantum wires (QWs) against thermal cycling and lateral shifting, which change the impurity configuration. Conductance quantization and the zero bias anomaly (ZBA) are robust in clean QWs. In contrast, disordered QWs show complexities in the ways of conductance resonance, peak splitting and trace crossing in source-drain bias spectroscopies. The experimental results and theoretical predictions are in congruence. Moreover, the resonant state arising from the impurities results in either a single peak or double-splitting peaks in the spectroscopies from the detailed impurity configurations. The resonant splitting peaks are found to influence the ZBA, indicating that a clean QW is crucial for investigating the intrinsic characteristics of the ZBA of QWs.
Phonon-induced optical superlattice.
de Lima, M M; Hey, R; Santos, P V; Cantarero, A
2005-04-01
We demonstrate the formation of a dynamic optical superlattice through the modulation of a semiconductor microcavity by stimulated acoustic phonons. The high coherent phonon population produces a folded optical dispersion relation with well-defined energy gaps and renormalized energy levels, which are accessed using reflection and diffraction experiments.
Epitaxy, thin films and superlattices
International Nuclear Information System (INIS)
Jagd Christensen, Morten
1997-05-01
This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)
Epitaxy, thin films and superlattices
Energy Technology Data Exchange (ETDEWEB)
Jagd Christensen, Morten
1997-05-01
This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.
Shim, B R; Ota, T; Kobayashi, K; Maehashi, K; Nakashima, H; Lee, S Y
1999-01-01
We have used transmission electron microscopy (TEM) and photoluminescence (PL) to study InGaAs/AlGaAs strained quantum wires (QWRs) grown by molecular beam epitaxy (MBE) on GaAs vicinal (110) substrates. The cross-sectional TEM image reveals that InGaAs QWRs structures are naturally formed on AlGaAs giant steps. In the plan-view TEM images, the fringe pattern in the giant-step region is observed for In sub x Ga sub 1 sub - sub x As layers with x<= 0.4 We measured the separation of the fringe in the plan-view TEM images and compared the result with the calculated fringe separation. From this result, we conclude that the fringes observed in the plan-view TEM images are moire fringes. PL spectra of the InGaAs QWRs samples reveal 80-meV shifts to lower energy with respect to the spectrum of a quantum well (QWL) grown on a (001) substrate under the same conditions. We also measured the polarization anisotropy of the PL spectra from the QWRs. The PL peak shifts systematically toward higher energy with decreasing...
International Nuclear Information System (INIS)
Shim, Byoung Rho; Torii, Satoshi; Ota, Takeshi; Kobayashi, Keisuke; Maehashi, Kenzo; Nakashima, Hisao; Lee, Sang Yun
1999-01-01
We have used transmission electron microscopy (TEM) and photoluminescence (PL) to study InGaAs/AlGaAs strained quantum wires (QWRs) grown by molecular beam epitaxy (MBE) on GaAs vicinal (110) substrates. The cross-sectional TEM image reveals that InGaAs QWRs structures are naturally formed on AlGaAs giant steps. In the plan-view TEM images, the fringe pattern in the giant-step region is observed for In x Ga 1-x As layers with x≤ 0.4 We measured the separation of the fringe in the plan-view TEM images and compared the result with the calculated fringe separation. From this result, we conclude that the fringes observed in the plan-view TEM images are moire fringes. PL spectra of the InGaAs QWRs samples reveal 80-meV shifts to lower energy with respect to the spectrum of a quantum well (QWL) grown on a (001) substrate under the same conditions. We also measured the polarization anisotropy of the PL spectra from the QWRs. The PL peak shifts systematically toward higher energy with decreasing InGaAs thickness. The degree of polarization for the InGaAs QWRs was about 0.29. The PL observation evidences the carrier confinement in the QWRs. These results indicate that locally thick InGaAs strained QWRs were successfully formed at the edge of AlGaAs giant steps
Energy Technology Data Exchange (ETDEWEB)
Gonzalez, J.W.; Duque, C.A. [Instituto de Fisica, Universidad de Antioquia, AA 1226, Medellin (Colombia); Lopez, S.Y. [Facultad de Educacion, Universidad de Antioquia, AA 1226, Medellin (Colombia); Rodriguez, A.H. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico (UNAM), Apdo. Postal 20-364, San Angel 01000, Mexico DF (Mexico); Porras-Montenegro, N. [Departamento de Fisica, Universidad del Valle, AA 25360, Cali (Colombia)
2007-01-15
Using a variational procedure within the effective mass approximation, we have calculated the influence of an applied electric field and hydrostatic pressure on the shallow-impurity-related optical properties in a rectangular-transverse section GaAs-Ga{sub 1-x}Al{sub x}As quantum well wire. The electric field is applied in the plane of the transverse section of the wire and different angular directions have been considered. The results presented are for the impurity binding energy, its corresponding density of impurity states, and impurity-related transition energy and polarizability. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
THz laser based on quasi-periodic AlGaAs superlattices
Energy Technology Data Exchange (ETDEWEB)
Malyshev, K V [N.E. Bauman Moscow State Technical University, Moscow (Russian Federation)
2013-06-30
The use of quasi-periodic AlGaAs superlattices as an active element of a quantum cascade laser of terahertz range is proposed and theoretically investigated. A multi-colour emission, having from three to six peaks of optical gain, is found in Fibonacci, Thue-Morse, and figurate superlattices in electric fields of intensity F = 11 - 13 kV cm{sup -1} in the frequency range f = 2 - 4 THz. The peaks depend linearly on the electric field, retain the height of 20 cm{sup -1}, and strongly depend on the thickness of the AlGaAs-layers. (lasers)
Magnetoscriptive readout wire chamber. Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.
1967-01-01
Magnetoscriptive readout wire chamber.Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.
Proportional multi-wire chamber. Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle. Proportional wire chambers allow a much quicker reading than the optical or magnetoscriptive readout wire chambers.
Magneto-transport studies of InAs/GaSb short period superlattices
International Nuclear Information System (INIS)
Broadley, Victoria Jane
2002-01-01
This thesis studies the transport properties of short period semiconducting InAs/GaSb superlattices in the presence of strong electric and magnetic fields applied parallel to the growth axis. Electrical transport parallel to the growth axis occurs through the superlattice miniband, which have widths varying from three to 30meV. Resonant scattering between confined Landau levels and Stark levels is observed at low temperatures (4.2K). In addition LO-phonon assisted scattering between Landau levels is observed in both type-I GaAs/AIAs and type-ll inAs/GaSb superlattices, which are enhanced in the type-ll system due to the strong interband coupling. K·p band structure calculations show that the interband coupling causes the superlattice miniband energy dispersion to be strongly dependent on the in-plane wavevector and the applied magnetic field. For large applied electric fields, where the miniband is split into discrete Stark levels, strong stark-cyclotron resonance (SCR) features are observed, which occur when the Landau level separation equals to the stark level separation. These resonances are enhanced when compared to SCR in type-I superlattices due to the suppression of miniband conduction in higher lying Landau levels. At low electric fields electrical transport through the superlattice miniband yields characteristic miniband transport features, which are modelled using the Esaki-Tsu miniband transport model. Strong electron - LO-phonon scattering is also observed in InAs/GaSb superlattices, where we report the first observation of miniband transport assisted via the emission of LO-phonons between stark levels in adjacent wells. Below 50K thermally activated behaviour is reported and at high magnetic fields (in the quantum limit) complete localisation of carriers is observed. In this regime LO-phonon delocalised transport in also observed. (author)
Topological hierarchy matters — topological matters with superlattices of defects
International Nuclear Information System (INIS)
He Jing; Kou Su-Peng
2016-01-01
Topological insulators/superconductors are new states of quantum matter with metallic edge/surface states. In this paper, we review the defects effect in these topological states and study new types of topological matters — topological hierarchy matters. We find that both topological defects (quantized vortices) and non topological defects (vacancies) can induce topological mid-gap states in the topological hierarchy matters after considering the superlattice of defects. These topological mid-gap states have nontrivial topological properties, including the nonzero Chern number and the gapless edge states. Effective tight-binding models are obtained to describe the topological mid-gap states in the topological hierarchy matters. (topical review)
International Nuclear Information System (INIS)
Shuleiko, D V; Ilin, A S
2016-01-01
Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)
InN/GaN Superlattices: Band Structures and Their Pressure Dependence
DEFF Research Database (Denmark)
Gorczyca, Iza; Suski, Tadek; Staszczak, Grzegorz
2013-01-01
Creation of short-period InN/GaN superlattices is one of the possible ways of conducting band gap engineering in the green-blue range of the spectrum. The present paper reports results of photoluminescence experiments, including pressure effects, on a superlattice sample consisting of unit cells...... with one monolayer of InN and 40 monolayers of GaN. The results are compared with calculations performed for different types of superlattices: InN/GaN, InGaN/GaN, and InN/InGaN/GaN with single monolayers of InN and/or InGaN. The superlattices are simulated by band structure calculations based on the local...... density approximation (LDA) with a semi-empirical correction for the ‘‘LDA gap error’’. A similarity is observed between the results of calculations for an InGaN/GaN superlattice (with one monolayer of InGaN) and the experimental results. This indicates that the fabricated InN quantum wells may contain...
1985-01-01
Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.
Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.
Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.
Was used in ISR (Intersecting Storage Ring) split field magnet experiment. Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.
The mechanism of formation of the interlayer quantum wires in zinc-doped Bi2Te3
Directory of Open Access Journals (Sweden)
Alieva A. P.
2012-06-01
Full Text Available Nanowires formation process on a (0001 surface of Bi2Te3 is studied. It has been established that on interlayer surface Te(1—Te(1 there is a process of migration of atoms, moving and coagulation of clusters on the basis of Zn atoms. As a result of diffusion-limited aggregation the structures with quantum dots are formed, from which nanowires are self-organized. Such superficial structures play regulating role in working out the topological insulators based on A2VB3VI and increase thermoelectric efficiency of a composite.
Tunneling of electrons through semiconductor superlattices
Indian Academy of Sciences (India)
Unknown
Tunneling of electrons through semiconductor superlattices. C L ROY. Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302, India. Abstract. The purpose of the present paper is to report a study of tunneling of electrons through semicon- ductor superlattices (SSL); specially, we have ...
Plasmon Modes of Vertically Aligned Superlattices
DEFF Research Database (Denmark)
Filonenko, Konstantin; Duggen, Lars; Willatzen, Morten
2017-01-01
By using the Finite Element Method we visualize the modes of vertically aligned superlattice composed of gold and dielectric nanocylinders and investigate the emitter-plasmon interaction in approximation of weak coupling. We find that truncated vertically aligned superlattice can function...
Photostimulated attenuation of hypersound in superlattice
International Nuclear Information System (INIS)
Mensah, S.Y.; Allotey, F.K.; Adjepong, S.K.
1992-10-01
Photostimulated attenuation of hypersound in semiconductor superlattice has been investigated. It is shown that the attenuation coefficient depends on the phonon wave vector q in an oscillatory manner and that from this oscillation the band width Δ of superlattice can be found. (author). 14 refs, 1 fig
International Nuclear Information System (INIS)
Bunder, J.E.J.E.; McKenzie, R.H.Ross H.
2001-01-01
We consider the statistical properties of the local density of states of a one-dimensional Dirac equation in the presence of various types of disorder with Gaussian white-noise distribution. It is shown how either the replica trick or supersymmetry can be used to calculate exactly all the moments of the local density of states. Careful attention is paid to how the results change if the local density of states is averaged over atomic length scales. For both the replica trick and supersymmetry the problem is reduced to finding the ground state of a zero-dimensional Hamiltonian which is written solely in terms of a pair of coupled 'spins' which are elements of u(1,1). This ground state is explicitly found for the particular case of the Dirac equation corresponding to an infinite metallic quantum wire with a single conduction channel. The calculated moments of the local density of states agree with those found previously by Al'tshuler and Prigodin [Sov. Phys. JETP 68 (1989) 198] using a technique based on recursion relations for Feynman diagrams
Energy Technology Data Exchange (ETDEWEB)
Akazawa, Masamichi; Hasegawa, Hideki; Jia, Rui [Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Technology, Hokkaido University, N-13, W-8, Sapporo 060-8628 (Japan)
2007-04-15
Detailed properties of the Si interface control layer (Si ICL)-based surface passivation structure are characterized by in-situ X-ray photoelectron spectroscopy (XPS) in an ultra-high vacuum multi-chamber system. Si ICLs were grown by molecular beam epitaxy (MBE) on GaAs and AlGaAs(001) and (111)B surfaces, and were partially converted to SiN{sub x} by nitrogen radical beam. Freshly MBE-grown clean GaAs and AlGaAs surfaces showed strong Fermi level pinning. Large shifts of the surface Fermi level position corresponding to reduction of pinning took place after Si ICL growth, particularly on (111)B surface (around 500 meV). However, subsequent surface nitridation increased pinning again. Then, a significant reduction of pinning was obtained by changing SiN{sub x} to silicon oxynitride by intentional air-exposure and subsequent annealing. This has led to realization of a stable passivation structure with an ultrathin oxynitride/Si ICL structure which prevented subcutaneous oxidation during further device processing under air-exposure. The Si-ICL-based passivation process was applied to surface passivation of quantum wire (QWR) transistors where anomalously large side-gating phenomenon was completely eliminated. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Tshipa, M.; Winkoun, D. P.; Nijegorodov, N.; Masale, M.
2018-04-01
Theoretical investigations are carried out of binding energies of a donor charge assumed to be located exactly at the center of symmetry of two concentric cylindrical quantum wires. The intrinsic confinement potential in the region of the inner cylinder is modeled in any one of the three profiles: simple parabolic, shifted parabolic or the polynomial potential. The potential inside the shell is taken to be a potential step or potential barrier of a finite height. Additional confinement of the charge carriers is due to the vector potential of the axial applied magnetic field. It is found that the binding energies attain maxima in their variations with the radius of the inner cylinder irrespective of the particular intrinsic confinement of the inner cylinder. As the radius of the inner cylinder is increased further, the binding energies corresponding to either the parabolic or the polynomial potentials attain minima at some critical core-radius. Finally, as anticipated, the binding energies increase with the increase of the parallel applied magnetic field. This behaviour of the binding energies is irrespective of the particular electric potential of the nanostructure or its specific dimensions.
International Nuclear Information System (INIS)
Ness, H
2006-01-01
In this paper, we consider the problem of inelastic electron transport in molecular systems in which both electronic and vibrational degrees of freedom are considered on the quantum level. The electronic transport properties of the corresponding molecular nanojunctions are obtained by means of a non-perturbative Landauer-like multi-channel inelastic scattering technique. The connections between this approach and other Green's function techniques that are useful in particular cases are studied in detail. The validity of the wide-band approximation, the effects of the lead self-energy and the dynamical polaron shift are also studied for a wide range of parameters. As a practical application of the method, we consider the effects of the temperature on the conductance properties of molecular breakjunctions in relation to recent experiments
Type II superlattice technology for LWIR detectors
Klipstein, P. C.; Avnon, E.; Azulai, D.; Benny, Y.; Fraenkel, R.; Glozman, A.; Hojman, E.; Klin, O.; Krasovitsky, L.; Langof, L.; Lukomsky, I.; Nitzani, M.; Shtrichman, I.; Rappaport, N.; Snapi, N.; Weiss, E.; Tuito, A.
2016-05-01
SCD has developed a range of advanced infrared detectors based on III-V semiconductor heterostructures grown on GaSb. The XBn/XBp family of barrier detectors enables diffusion limited dark currents, comparable with MCT Rule-07, and high quantum efficiencies. This work describes some of the technical challenges that were overcome, and the ultimate performance that was finally achieved, for SCD's new 15 μm pitch "Pelican-D LW" type II superlattice (T2SL) XBp array detector. This detector is the first of SCD's line of high performance two dimensional arrays working in the LWIR spectral range, and was designed with a ~9.3 micron cut-off wavelength and a format of 640 x 512 pixels. It contains InAs/GaSb and InAs/AlSb T2SLs, engineered using k • p modeling of the energy bands and photo-response. The wafers are grown by molecular beam epitaxy and are fabricated into Focal Plane Array (FPA) detectors using standard FPA processes, including wet and dry etching, indium bump hybridization, under-fill, and back-side polishing. The FPA has a quantum efficiency of nearly 50%, and operates at 77 K and F/2.7 with background limited performance. The pixel operability of the FPA is above 99% and it exhibits a stable residual non uniformity (RNU) of better than 0.04% of the dynamic range. The FPA uses a new digital read-out integrated circuit (ROIC), and the complete detector closely follows the interfaces of SCD's MWIR Pelican-D detector. The Pelican- D LW detector is now in the final stages of qualification and transfer to production, with first prototypes already integrated into new electro-optical systems.
Planar channeling in superlattices: Theory
International Nuclear Information System (INIS)
Ellison, J.A.; Picraux, S.T.; Allen, W.R.; Chu, W.K.
1988-01-01
The well-known continuum model theory for planar channeled energetic particles in perfect crystals is extended to layered crystalline structures and applied to superlattices. In a strained-layer structure, the planar channels with normals which are not perpendicular to the growth direction change their direction at each interface, and this dramatically influences the channeling behavior. The governing equation of motion for a planar channeled ion in a strained-layer superlattice with equal layer thicknesses is a one degree of freedom nonlinear oscillator which is periodically forced with a sequence of δ functions. These δ functions, which are of equal spacing and amplitude with alternating sign, represent the tilts at each of the interfaces. Thus upon matching an effective channeled particle wavelength, corresponding to a natural period of the nonlinear oscillator, to the period of the strained-layer superlattice, corresponding to the periodic forcing, strong resonance effects are expected. The condition of one effective wavelength per period corresponds to a rapid dechanneling at a well-defined depth (catastrophic dechanneling), whereas two wavelengths per period corresponds to no enhanced dechanneling after the first one or two layers (resonance channeling). A phase plane analysis is used to characterize the channeled particle motion. Detailed calculations using the Moliere continuum potential are compared with our previously described modified harmonic model, and new results are presented for the phase plane evolution, as well as the dechanneling as a function of depth, incident angle, energy, and layer thickness. General scaling laws are developed and nearly universal curves are obtained for the dechanneling versus depth under catastrophic dechanneling
Electronic structure of silicon superlattices
International Nuclear Information System (INIS)
Krishnamurthy, S.; Moriarty, J.A.
1984-01-01
Utilizing a new complex-band-structure technique, the electronic structure of model Si-Si/sub 1-x/Ge/sub x/ and MOS superlattices has been obtained over a wide range of layer thickness d (11 less than or equal to d less than or equal to 110 A). For d greater than or equal to 44 A, it is found that these systems exhibit a direct fundamental band gap. Further calculations of band-edge effective masses and impurity scattering rates suggest the possibility of a band-structure-driven enhancement in electron mobility over bulk silicon
Klangtakai, Pawinee; Sanorpim, Sakuntam; Onabe, Kentaro
2011-12-01
Strained GaAsN T-junction quantum wires (T-QWRs) with different N contents grown on GaAs by two steps metal-organic vapor phase epitaxy in [001] and [110] directions, namely QW1 and QW2 respectively, have been investigated by photoreflectance (PR) spectroscopy. Two GaAsN T-QWRs with different N contents were formed by T-intersection of (i) a 6.4-nm-thick GaAs0.89N0.011 QW1 and a 5.2-nm-thick GaAs0.968N0.032 QW2 and (ii) a 5.0-nm-thick GaAs0.985N0.015 QW1 and a 5.2-nm-thick GaAs0.968N0.032 QW2. An evidence of a one-dimensional structure at T-intersection of the two QWs on the (001) and (110) surfaces was established by PR resonances associated with extended states in all the QW and T-QWR samples. It is found that larger lateral confinement energy than 100 meV in both of [001] and [110] directions were achieved for GaAsN T-QWRs. With increasing temperature, the transition energy of GaAsN T-QWRs decreases with a faster shrinking rate compared to that of bulk GaAs. Optical quality of GaAsN T-QWRs is found to be affected by the N-induced band edge fluctuation, which is the unique characteristic of dilute III-V-nitrides.
Silicon carbide whiskers with superlattice structure: A precursor for a new type of nanoreactor
International Nuclear Information System (INIS)
Lutsenko, Vadym G.
2008-01-01
Silicon carbide whiskers exhibit growth predominantly in the direction. The high level of impurities, stacking faults and nanosized twins govern the formation of homojunctions and heterojunctions in crystals. The structure of the whiskers comprises a hybrid superlattice, i.e. contains elements of doped and composite superlattices. An individual SiC whisker can contain hundreds of quantum wells with anomalous chemical properties. This paper shows that it is possible to selectively etch quantum wells and to construct whiskers with quasi-regularly distributed slit-like nanopores (nanoreactors), which are bordered by polar planes {1 1 1}, {0 0 0 1} or a combination of them, and also to produce flat SiC nanocrystals bordered by polar planes
Magnetic structure of holmium-yttrium superlattices
DEFF Research Database (Denmark)
Jehan, D.A.; McMorrow, D.F.; Cowley, R.A.
1993-01-01
We present the results of a study of the chemical and magnetic structures of a series of holmium-yttrium superlattices and a 5000 angstrom film of holmium, all grown by molecular-beam epitaxy. By combining the results of high-resolution x-ray diffraction with detailed modeling, we show...... that the superlattices have high crystallographic integrity: the structural coherence length parallel to the growth direction is typically almost-equal-to 2000 angstrom, while the interfaces between the two elements are well defined and extend over approximately four lattice planes. The magnetic structures were...... determined using neutron-scattering techniques. The moments on the Ho3+ ions in the superlattices form a basal-plane helix. From an analysis of the superlattice structure factors of the primary magnetic satellites, we are able to determine separately the contributions made by the holmium and yttrium...
Theory of transmission through disordered superlattices
DEFF Research Database (Denmark)
Wacker, Andreas; Hu, Ben Yu-Kuang
1999-01-01
We derive a theory for transmission through disordered finite superlattices in which the interface roughness scattering is treated by disorder averaging. This procedure permits efficient calculation of the transmission through samples with large cross sections. These calculations can be performed...
Spin echo dynamics under an applied drift field in graphene nanoribbon superlattices
Energy Technology Data Exchange (ETDEWEB)
Prabhakar, Sanjay, E-mail: sprabhakar@wlu.ca [M 2NeT Laboratory, Wilfrid Laurier University, 75 University Avenue West, Waterloo, Ontario N2L 3C5 (Canada); Melnik, Roderick [M 2NeT Laboratory, Wilfrid Laurier University, 75 University Avenue West, Waterloo, Ontario N2L 3C5 (Canada); Gregorio Millan Institute, Universidad Carlos III de Madrid, 28911 Leganes (Spain); Bonilla, Luis L. [Gregorio Millan Institute, Universidad Carlos III de Madrid, 28911 Leganes (Spain); Raynolds, James E. [Drinker Biddle and Reath LLP, Washington, DC 20005 (United States)
2013-12-02
We investigate the evolution of spin dynamics in graphene nanoribbon superlattices (GNSLs) with armchair and zigzag edges in the presence of a drift field. We determine the exact evolution operator and show that it exhibits spin echo phenomena due to rapid oscillations of the quantum states along the ribbon. The evolution of the spin polarization is accompanied by strong beating patterns. We also provide detailed analysis of the band structure of GNSLs with armchair and zigzag edges.
Spin echo dynamics under an applied drift field in graphene nanoribbon superlattices
International Nuclear Information System (INIS)
Prabhakar, Sanjay; Melnik, Roderick; Bonilla, Luis L.; Raynolds, James E.
2013-01-01
We investigate the evolution of spin dynamics in graphene nanoribbon superlattices (GNSLs) with armchair and zigzag edges in the presence of a drift field. We determine the exact evolution operator and show that it exhibits spin echo phenomena due to rapid oscillations of the quantum states along the ribbon. The evolution of the spin polarization is accompanied by strong beating patterns. We also provide detailed analysis of the band structure of GNSLs with armchair and zigzag edges
Effects of post-growth annealing on InGaAs quantum posts embedded in Schottky diodes
International Nuclear Information System (INIS)
Schramm, A; Polojärvi, V; Hakkarainen, T V; Tukiainen, A; Guina, M
2011-01-01
We study effects of rapid thermal annealing on photoluminescence and electron confinement of InGaAs quantum posts by means of photoluminescence experiments and capacitance–voltage spectroscopy. The quantum posts are embedded in n-type Schottky diodes grown by molecular beam epitaxy on GaAs(1 0 0). The observed photoluminescence spectra arise from the quantum posts as well as from a contribution of a wetting-layer superlattice. With increasing annealing temperatures, the quantum-post photoluminescence blueshifts toward the wetting-layer superlattice, and upon the highest annealing step, the wetting-layer superlattice luminescence dominates. In capacitance–voltage experiments, we clearly observe a charge accumulation in the quantum-post layer as well as from the wetting-layer superlattice. Capacitance–voltage spectra and carrier-density profiles only experience slight changes upon annealing treatments. We suggest that the main electron accumulation takes place in the wetting-layer superlattice
Epitaxial rare-earth superlattices and films
International Nuclear Information System (INIS)
Salamon, M.B.; Beach, R.S.; Flynn, C.P.; Matheny, A.; Tsui, F.; Rhyne, J.J.
1992-01-01
This paper reports on epitaxial growth of rare-earth superlattices which is demonstrated to have opened important new areas of research on magnetic materials. The propagation magnetic order through non-magnetic elements, including its range and anisotropy, has been studied. The importance of magnetostriction in determining the phase diagram is demonstrated by the changes induced by epitaxial clamping. The cyrstallinity of epitaxial superlattices provides the opportunity to study interfacial magnetism by conventional x-ray and neutron scattering methods
Maximum Entropy Closure of Balance Equations for Miniband Semiconductor Superlattices
Directory of Open Access Journals (Sweden)
Luis L. Bonilla
2016-07-01
Full Text Available Charge transport in nanosized electronic systems is described by semiclassical or quantum kinetic equations that are often costly to solve numerically and difficult to reduce systematically to macroscopic balance equations for densities, currents, temperatures and other moments of macroscopic variables. The maximum entropy principle can be used to close the system of equations for the moments but its accuracy or range of validity are not always clear. In this paper, we compare numerical solutions of balance equations for nonlinear electron transport in semiconductor superlattices. The equations have been obtained from Boltzmann–Poisson kinetic equations very far from equilibrium for strong fields, either by the maximum entropy principle or by a systematic Chapman–Enskog perturbation procedure. Both approaches produce the same current-voltage characteristic curve for uniform fields. When the superlattices are DC voltage biased in a region where there are stable time periodic solutions corresponding to recycling and motion of electric field pulses, the differences between the numerical solutions produced by numerically solving both types of balance equations are smaller than the expansion parameter used in the perturbation procedure. These results and possible new research venues are discussed.
Future device applications of low-dimensional carbon superlattice structures
Bhattacharyya, Somnath
2005-03-01
We observe superior transport properties in low-dimensional amorphous carbon (a-C) and superlattice structures fabricated by a number of different techniques. Low temperature conductivity of these materials is explained using argument based on the crossover of dimensionality of weak localization and electron-electron interactions along with a change of sign of the magneto-resistance. These trends are significantly different from many other well characterized ordered or oriented carbon structures, and, show direct evidence of high correlation length, mobility and an effect of the dimensionality in low-dimensional a-C films. We show routes to prepare bespoke features by tuning the phase relaxation time in order to make high-speed devices over large areas. The artificially grown multi-layer superlattice structures of diamond-like amorphous carbon films show high-frequency resonance and quantum conductance suggesting sufficiently high values of phase coherence length in the present disordered a-C system that could lead to fast switching multi-valued logic.
Optical properties of graphene superlattices.
Le, H Anh; Ho, S Ta; Nguyen, D Chien; Do, V Nam
2014-10-08
In this work, the optical responses of graphene superlattices, i.e. graphene subjected to a periodic scalar potential, are theoretically reported. The optical properties were studied by investigating the optical conductivity, which was calculated using the Kubo formalism. It was found that the optical conductivity becomes dependent on the photon polarization and is suppressed in the photon energy range of (0, Ub), where Ub is the potential barrier height. In the higher photon energy range, i.e. Ω > Ub, the optical conductivity is, however, almost identical to that of pristine graphene. Such behaviors of the optical conductivity are explained microscopically through the analysis of the elements of optical matrices and effectively through a simple model, which is based on the Pauli blocking mechanism.
Optical properties of graphene superlattices
International Nuclear Information System (INIS)
Le, H Anh; Do, V Nam; Ho, S Ta; Nguyen, D Chien
2014-01-01
In this work, the optical responses of graphene superlattices, i.e. graphene subjected to a periodic scalar potential, are theoretically reported. The optical properties were studied by investigating the optical conductivity, which was calculated using the Kubo formalism. It was found that the optical conductivity becomes dependent on the photon polarization and is suppressed in the photon energy range of (0, U b ), where U b is the potential barrier height. In the higher photon energy range, i.e. Ω > U b , the optical conductivity is, however, almost identical to that of pristine graphene. Such behaviors of the optical conductivity are explained microscopically through the analysis of the elements of optical matrices and effectively through a simple model, which is based on the Pauli blocking mechanism. (paper)
International Nuclear Information System (INIS)
Rezaei, G.; Mousavi, S.; Sadeghi, E.
2012-01-01
Based on the effective-mass approximation within a variational scheme, binding energy and self-polarization of hydrogenic impurity confined in a finite confining potential square quantum well wire, under the action of external electric field and hydrostatic pressure, are investigated. The binding energy and self-polarization are computed as functions of the well width, impurity position, electric field, and hydrostatic pressure. Our results show that the external electric field and hydrostatic pressure as well as the well width and impurity position have a great influence on the binding energy and self-polarization.
International Nuclear Information System (INIS)
Ye Chengzhi; Xue Rui; Nie, Y.-H.; Liang, J.-Q.
2009-01-01
Using the transfer matrix method, we investigate the electron transmission over multiple-well semiconductor superlattices with Dresselhaus spin-orbit coupling in the potential-well regions. The superlattice structure enhances the effect of spin polarization in the transmission spectrum. The minibands of multiple-well superlattices for electrons with different spin can be completely separated at the low incident energy, leading to the 100% spin polarization in a broad energy windows, which may be an effective scheme for realizing spin filtering. Moreover, for the transmission over n-quantum-well, it is observed that the resonance peaks in the minibands split into n-folds or (n-1)-folds depending on the well-width and barrier-thickness, which is different from the case of tunneling through n-barrier structure
International Nuclear Information System (INIS)
Fransson, S.G.
1993-01-01
Evaluation of pacemaker wires were performed by comparing Advanced Multiple Beam Equalization Radiography (AMBER) with conventional chest radiography. The scanning equalization technique of the AMBER unit makes it superior to conventional technique in the depiction of different structures in the mediastinum or in the pleural sinuses. So far motion artifacts have not been considered clinically important. The longer exposure time, however, may impair the assessment of pacemaker wires. The motion artifact described may not only make adequate evaluation impossible but may even give a false impression of a lead fracture. The difference between the two systems was significant. (orig.)
International Nuclear Information System (INIS)
Keay, B.J.; Allen, S.J.; Campman, K.L.
1995-01-01
We report the first observation of Negative Absolute Conductance (NAC), dynamic localization and multiphoton stimulated emission assisted tunneling in terahertz driven semiconductor superlattices. Theories predicting NAC in semiconductor superlattices subjected to AC electric fields have existed for twenty years, but have never been verified experimentally. Most theories are based upon semiclassical arguments and are only valid for superlattices in the miniband or coherent tunneling regime. We are not aware of models predicting NAC in superlattices in the sequential tunneling regime, although there has been recent theoretical work on double-barrier structures. Perhaps the most remarkable result is found in the power dependence of the current-voltage (I-V) characteristics near zero DC bias. As the laser power is increased the current decreases towards zero and then becomes negative. This result implies that the electrons are absorbing energy from the laser field, producing a net current in the direction opposite to the applied voltage. NAC around zero DC bias is a particularly surprising observation considering photon-assisted tunneling is not expected to be observable between the ground states of neighboring quantum wells in a semiconductor superlattice. Contrary to this believe our results are most readily attributable to photon absorption and multiphoton emission between ground states of neighboring wells. The I-V characteristics measured in the presence of terahertz radiation at low DC bias also contain steps and plateaus analogous to photon-assisted steps observed in superconducting junctions. As many as three steps have been clearly resolved corresponding to stimulated emission into the terahertz field by a three-photon process
Superlattice design for optimal thermoelectric generator performance
Priyadarshi, Pankaj; Sharma, Abhishek; Mukherjee, Swarnadip; Muralidharan, Bhaskaran
2018-05-01
We consider the design of an optimal superlattice thermoelectric generator via the energy bandpass filter approach. Various configurations of superlattice structures are explored to obtain a bandpass transmission spectrum that approaches the ideal ‘boxcar’ form, which is now well known to manifest the largest efficiency at a given output power in the ballistic limit. Using the coherent non-equilibrium Green’s function formalism coupled self-consistently with the Poisson’s equation, we identify such an ideal structure and also demonstrate that it is almost immune to the deleterious effect of self-consistent charging and device variability. Analyzing various superlattice designs, we conclude that superlattice with a Gaussian distribution of the barrier thickness offers the best thermoelectric efficiency at maximum power. It is observed that the best operating regime of this device design provides a maximum power in the range of 0.32–0.46 MW/m 2 at efficiencies between 54%–43% of Carnot efficiency. We also analyze our device designs with the conventional figure of merit approach to counter support the results so obtained. We note a high zT el = 6 value in the case of Gaussian distribution of the barrier thickness. With the existing advanced thin-film growth technology, the suggested superlattice structures can be achieved, and such optimized thermoelectric performances can be realized.
Al-Khalili, Jim
2003-01-01
In this lively look at quantum science, a physicist takes you on an entertaining and enlightening journey through the basics of subatomic physics. Along the way, he examines the paradox of quantum mechanics--beautifully mathematical in theory but confoundingly unpredictable in the real world. Marvel at the Dual Slit experiment as a tiny atom passes through two separate openings at the same time. Ponder the peculiar communication of quantum particles, which can remain in touch no matter how far apart. Join the genius jewel thief as he carries out a quantum measurement on a diamond without ever touching the object in question. Baffle yourself with the bizzareness of quantum tunneling, the equivalent of traveling partway up a hill, only to disappear then reappear traveling down the opposite side. With its clean, colorful layout and conversational tone, this text will hook you into the conundrum that is quantum mechanics.
Raman Scattering and Surface Photovoltage Spectroscopy Studies of InGaAs/GaAs Radial Superlattices
Angelova, T.; Cros, A.; Ivanov, Ts.; Donchev, V.; Cantarero, A.; Shtinkov, N.; Deneke, Ch.; Schmidt, O. G.
2011-12-01
In this work we get insight into the multilayer structure of rolled-up microtube radial superlattices (RSLs) by the study of the optical and folded acoustic phonon modes of individual microtubes. Raman results show shifts of the InGaAs and GaAs related longitudinal optical modes that can be related to the strain state of the tubes. The folding of the acoustic modes has been related with the periodicity of the artificial superlattice formed by the multiple turns of the heterostructures. Information on the electronic structure and optical transitions of RSLs has been obtained by surface photovoltage spectroscopy. Room temperature spectra reveal several electronic transitions with energies below 1.3 eV. These transitions have been identified as originating from defect levels at the interfaces, as well as from the RSLs and the In0.215Ga0.785As/GaAs quantum well in the unfolded regions of the sample.
Transfer matrix theory of monolayer graphene/bilayer graphene heterostructure superlattice
International Nuclear Information System (INIS)
Wang, Yu
2014-01-01
We have formulated a transfer matrix method to investigate electronic properties of graphene heterostructure consisting of monolayer graphene and bilayer counterpart. By evaluating transmission, conductance, and band dispersion, we show that, irrespective of the different carrier chiralities in monolayer graphene and bilayer graphene, superlattice consisting of biased bilayer graphene barrier and monolayer graphene well can mimic the electronic properties of conventional semiconductor superlattice, displaying the extended subbands in the quantum tunneling regime and producing anisotropic minigaps for the classically allowed transport. Due to the lateral confinement, the lowest mode has shifted away from the charge neutral point of monolayer graphene component, opening a sizeable gap in concerned structure. Following the gate-field and geometry modulation, all electronic states and gaps between them can be externally engineered in an electric-controllable strategy.
Theoretical study of nitride short period superlattices
Gorczyca, I.; Suski, T.; Christensen, N. E.; Svane, A.
2018-02-01
Discussion of band gap behavior based on first principles calculations of electronic band structures for various short period nitride superlattices is presented. Binary superlattices, as InN/GaN and GaN/AlN as well as superlattices containing alloys, as InGaN/GaN, GaN/AlGaN, and GaN/InAlN are considered. Taking into account different crystallographic directions of growth (polar, semipolar and nonpolar) and different strain conditions (free-standing and pseudomorphic) all the factors influencing the band gap engineering are analyzed. Dependence on internal strain and lattice geometry is considered, but the main attention is devoted to the influence of the internal electric field and the hybridization of well and barrier wave functions. The contributions of these two important factors to band gap behavior are illustrated and estimated quantitatively. It appears that there are two interesting ranges of layer thicknesses; in one (few atomic monolayers in barriers and wells) the influence of the wave function hybridization is dominant, whereas in the other (layers thicker than roughly five to six monolayers) dependence of electric field on the band gaps is more important. The band gap behavior in superlattices is compared with the band gap dependence on composition in the corresponding ternary and quaternary alloys. It is shown that for superlattices it is possible to exceed by far the range of band gap values, which can be realized in ternary alloys. The calculated values of the band gaps are compared with the photoluminescence emission energies, when the corresponding data are available. Finally, similarities and differences between nitride and oxide polar superlattices are pointed out by comparison of wurtzite GaN/AlN and ZnO/MgO.
Charge Transport Along Phenylenevinylene Molecular Wires
2006-01-01
Abstract A model to calculate the mobility of charges along molecular wires is presented. The model is based on the tight-binding approximation and combines a quantum mechanical description of the charge with a classical description of the structural degrees of freedom. It is demonstrated that the average mobility of charge carriers along molecular wires can be obtained by time-propagation of states which are initially localised. The model is used to calculate the mobility of charg...
Application of irradiated wire
International Nuclear Information System (INIS)
Uda, I.; Kozima, K.; Suzuki, S.; Tada, S.; Torisu, S.; Veno, K.
1984-01-01
Rubber insulated wires are still useful for internal wiring in motor vehicles and electrical equipment because of flexibility and toughness. Irradiated cross-linked rubber materials have been successfully introduced for use with fusible link wire and helically coiled cord
Quantitative x-ray structure determination of superlattices and interfaces
International Nuclear Information System (INIS)
Schuller, I.K.; Fullerton, E.E.
1990-01-01
This paper presents a general procedure for quantitative structural refinement of superlattice structures. To analyze a wide range of superlattices, the authors have derived a general kinematical diffraction formula that includes random, continuous and discrete fluctuations from the average structure. By implementing a non-linear fitting algorithm to fit the entire x-ray diffraction profile, refined parameters that describe the average superlattice structure, and deviations from this average are obtained. The structural refinement procedure is applied to a crystalline/crystalline Mo/Ni superlattices and crystalline/amorphous Pb/Ge superlattices. Roughness introduced artificially during growth in Mo/Ni superlattices is shown to be accurately reproduced by the refinement
Exchange bias in Fe/Cr double superlattices
International Nuclear Information System (INIS)
Jiang, J. S.; Felcher, G. P.; Inomata, A.; Goyette, R.; Nelson, C.; Bader, S. D.
1999-01-01
Utilizing the oscillatory interlayer exchange coupling in Fe/Cr superlattices, we have constructed ''double superlattice'' structures where a ferromagnetic (F) and an antiferromagnetic (AF) Fe/Cr superlattice are coupled through a Cr spacer. The minor hysteresis loops in the magnetization are shifted from zero field, i.e., the F superlattice is exchange biased by the AF one. The double superlattices are sputter-deposited with (211) epitaxy and possess uniaxial in-plane magnetic anisotropy. The magnitude of the bias field is satisfactorily described by the classic formula for collinear spin structures. The coherent structure and insensitivity to atomic-scale roughness makes it possible to determine the spin distribution by polarized neutron reflectivity, which confirms that the spin structure is collinear. The magnetic reversal behavior of the double superlattices suggests that a realistic model of exchange bias needs to address the process of nucleating local reverse domains
Exchange bias in Fe/Cr double superlattices
International Nuclear Information System (INIS)
Jiang, J. S.; Felcher, G. P.; Inomata, A.; Goyette, R.; Nelson, C. S.; Bader, S. D.
2000-01-01
Utilizing the oscillatory interlayer exchange coupling in Fe/Cr superlattices, we have constructed ''double superlattice'' structures where a ferromagnetic (F) and an antiferromagnetic (AF) Fe/Cr superlattice are coupled through a Cr spacer. The minor hysteresis loops in the magnetization are shifted from zero field, i.e., the F superlattice is exchange biased by the AF one. The double superlattices are sputter deposited with (211) epitaxy and possess uniaxial in-plane magnetic anisotropy. The magnitude of the bias field is satisfactorily described by the classic formula for collinear spin structures. The coherent structure and insensitivity to atomic-scale roughness makes it possible to determine the spin distribution by polarized neutron reflectivity, which confirms that the spin structure is collinear. The magnetic reversal behavior of the double superlattices suggests that a realistic model of exchange bias needs to address the process of nucleating local reverse domains. (c) 2000 American Vacuum Society
Solvent-driven symmetry of self-assembled nanocrystal superlattices-A computational study
Kaushik, Ananth P.
2012-10-29
The preference of experimentally realistic sized 4-nm facetted nanocrystals (NCs), emulating Pb chalcogenide quantum dots, to spontaneously choose a crystal habit for NC superlattices (Face Centered Cubic (FCC) vs. Body Centered Cubic (BCC)) is investigated using molecular simulation approaches. Molecular dynamics simulations, using united atom force fields, are conducted to simulate systems comprised of cube-octahedral-shaped NCs covered by alkyl ligands, in the absence and presence of experimentally used solvents, toluene and hexane. System sizes in the 400,000-500,000-atom scale followed for nanoseconds are required for this computationally intensive study. The key questions addressed here concern the thermodynamic stability of the superlattice and its preference of symmetry, as we vary the ligand length of the chains, from 9 to 24 ï£¿CH2 groups, and the choice of solvent. We find that hexane and toluene are "good" solvents for the NCs, which penetrate the ligand corona all the way to the NC surfaces. We determine the free energy difference between FCC and BCC NC superlattice symmetries to determine the system\\'s preference for either geometry, as the ratio of the length of the ligand to the diameter of the NC is varied. We explain these preferences in terms of different mechanisms in play, whose relative strength determines the overall choice of geometry. © 2012 Wiley Periodicals, Inc.
Kahen, K. B.
1986-01-01
The optical properties of III to V binary and ternary compounds and GaAs-Al(x)Ga(1-x)As superlattices are determined by calculating the real and imaginary parts of the transverse dielectric constant. Emphasis is given to determining the influence of different material and superlattice parameters on the values of the index of refraction and absorption coefficient. In order to calculate the optical properties of a material, it is necessary to compute its electronic band structure. This was accomplished by introducing a partition band structure approach based on a combination of the vector k x vector p and nonlocal pseudopotential techniques. The advantages of this approach are that it is accurate, computationally fast, analytical, and flexible. These last two properties enable incorporation of additional effects into the model, such as disorder scattering, which occurs for alloy materials and excitons. Furthermore, the model is easily extended to more complex structures, for example multiple quantum wells and superlattices. The results for the transverse dielectric constant and absorption coefficient of bulk III to V compounds compare well with other one-electron band structure models and the calculations show that for small frequencies, the index of refraction is determined mainly by the contibution of the outer regions of the Brillouin zone.
The solitary electromagnetic waves in the graphene superlattice
International Nuclear Information System (INIS)
Kryuchkov, Sergey V.; Kukhar', Egor I.
2013-01-01
d’Alembert equation written for the electromagnetic waves propagating in the graphene superlattice is analyzed. The possibility of the propagation of the solitary electromagnetic waves in the graphene superlattice is discussed. The amplitude and the width of the electromagnetic pulse are calculated. The drag current induced by such wave across the superlattice axis is investigated. The numerical estimate of the charge dragged by the solitary wave is made.
The cross-plane thermoelectric properties of p-Ge/Si0.5Ge0.5 superlattices
International Nuclear Information System (INIS)
Ferre Llin, L.; Samarelli, A.; Weaver, J. M. R.; Dobson, P. S.; Paul, D. J.; Cecchi, S.; Chrastina, D.; Isella, G.; Etzelstorfer, T.; Stangl, J.; Müller Gubler, E.
2013-01-01
The electrical conductivity, Seebeck coefficients, and thermal conductivities of a range of p-type Ge/Si 0.5 Ge 0.5 superlattices designed for thermoelectric generation and grown by low energy plasma enhanced chemical vapor deposition have been measured using a range of microfabricated test structures. For samples with barriers around 0.5 nm in thickness, the measured Seebeck coefficients were comparable to bulk p-SiGe at similar doping levels suggesting the holes see the material as a random bulk alloy rather than a superlattice. The Seebeck coefficients for Ge quantum wells of 2.85 ± 0.85 nm increased up to 533 ± 25 μV/K as the doping was reduced. The thermal conductivities are between 4.5 to 6.0 Wm −1 K −1 which are lower than comparably doped bulk Si 0.3 Ge 0.7 but higher than undoped Si/Ge superlattices. The highest measured figure of merit ZT was 0.080 ± 0.011 obtained for the widest quantum well studied. Analysis suggests that interface roughness is presently limiting the performance and a reduction in the strain between the quantum wells and barriers has the potential to improve the thermoelectric performance
Energy Technology Data Exchange (ETDEWEB)
Tsai, Chia-Lung, E-mail: cltsai@mail.cgu.edu.tw
2016-06-15
This study proposes the use of InGaN/GaN superlattices grown beneath InGaN multiple quantum wells (MQWs) and designed with different well widths to act as an electron emitter layer (EEL). Cross-sectional transmission electron microscopy reveals strong indium segregation in the underlying superlattices with a 5-nm-thick In{sub 0.1}Ga{sub 0.9}N well, thus corrupting the crystalline perfection of the resulting LEDs, and also increasing their leakage current. It was also found that the depth of the localized states increases with the well width of the underlying superlattices. In the proposed LEDs, variation in the biaxial strains of the superlattice EELs with different well widths results in an increase in indium incorporation of InGaN MQWs, thus obtaining a redshifted photoluminescence emission with respect to that of normal LED. Furthermore, the presence of relatively strong carrier localization and the alleviation of electron leakage from the InGaN MQWs results in improved light output performance from the proposed LEDs grown with a narrow In{sub 0.1}Ga{sub 0.9}N well in the underlying superlattices. Although growth in a wide In{sub 0.1}Ga{sub 0.9}N well (~3.5 nm) containing underlying superlattices suffers from poor crystalline quality due to partial strain relaxation, it resulted in improved roll-off behavior in terms of light intensity. This may be due to the improved hot electron cooling capacity mitigating the extent of carrier leakage. - Highlights: • In{sub 0.1}Ga{sub 0.9}N/GaN superlattices are used as an electron emitter layer. • Improved LED performance can be achieved using a narrow In{sub 0.1}Ga{sub 0.9}N well. • A wider well can further reduce carrier leakage despite poor quality is presented.
Green’s function theory of ferromagnetic resonance in magnetic superlattices with damping
International Nuclear Information System (INIS)
Qiu, R.K.; Guo, F.F.; Zhang, Z.D.
2016-01-01
We explore a quantum Green’s-function method to study the resonance absorption of magnetic materials. The relationship between the resonance magnon (spin wave) density and the resonance frequency of a superlattice consisting of two magnetic layers with damping and antiferromagnetic interlayer exchange coupling is studied. The effects of temperature, interlayer coupling, anisotropy, external magnetic field and damping on the the resonance frequency and resonance magnon density are investigated. The resonance excitation probability for a magnon is proportional to the resonance magnon density. In the classic methods, the imaginary part of magnetic permeability represents the resonance absorption in magnetic materials. In the quantum approach, the resonance magnon density can be used to estimate the strength of the resonance absorption. In the present work, a quantum approach is developed to study resonance absorption of magnetic materials and the results show the method to obtain a magnetic multilayered materials with both high resonance frequency and high resonance absorption.
Green’s function theory of ferromagnetic resonance in magnetic superlattices with damping
Energy Technology Data Exchange (ETDEWEB)
Qiu, R.K., E-mail: rkqiu@163.com [Shenyang University of Technology, Shenyang 110870 (China); Guo, F.F. [Shenyang University of Technology, Shenyang 110870 (China); Zhang, Z.D. [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)
2016-02-01
We explore a quantum Green’s-function method to study the resonance absorption of magnetic materials. The relationship between the resonance magnon (spin wave) density and the resonance frequency of a superlattice consisting of two magnetic layers with damping and antiferromagnetic interlayer exchange coupling is studied. The effects of temperature, interlayer coupling, anisotropy, external magnetic field and damping on the the resonance frequency and resonance magnon density are investigated. The resonance excitation probability for a magnon is proportional to the resonance magnon density. In the classic methods, the imaginary part of magnetic permeability represents the resonance absorption in magnetic materials. In the quantum approach, the resonance magnon density can be used to estimate the strength of the resonance absorption. In the present work, a quantum approach is developed to study resonance absorption of magnetic materials and the results show the method to obtain a magnetic multilayered materials with both high resonance frequency and high resonance absorption.
Energy Technology Data Exchange (ETDEWEB)
Kowarik, S.; Weber, C. [Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, 12489 Berlin (Germany); Hinderhofer, A.; Gerlach, A.; Schreiber, F. [Universität Tübingen, Institut für Angewandte Physik, Auf der Morgenstelle 10, 72076 Tübingen (Germany); Wang, C.; Hexemer, A. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Leone, S. R. [Departments of Chemistry and Physics, University of California, and Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)
2015-11-15
Highly crystalline and stable molecular superlattices are grown with the smallest possible stacking period using monolayers (MLs) of the organic semiconductors pentacene (PEN) and perfluoro-pentacene (PFP). Superlattice reflections in X-ray reflectivity and their energy dependence in resonant soft X-ray reflectivity measurements show that PFP and PEN MLs indeed alternate even though the coherent ordering is lost after ∼ 4 ML. The observed lattice spacing of 15.9 Å in the superlattice is larger than in pure PEN and PFP films, presumably because of more upright standing molecules and lack of interdigitation between the incommensurate crystalline PEN and PFP layers. The findings are important for the development of novel organic quantum optoelectronic devices.
Directory of Open Access Journals (Sweden)
S. Kowarik
2015-11-01
Full Text Available Highly crystalline and stable molecular superlattices are grown with the smallest possible stacking period using monolayers (MLs of the organic semiconductors pentacene (PEN and perfluoro-pentacene (PFP. Superlattice reflections in X-ray reflectivity and their energy dependence in resonant soft X-ray reflectivity measurements show that PFP and PEN MLs indeed alternate even though the coherent ordering is lost after ∼ 4 ML. The observed lattice spacing of 15.9 Å in the superlattice is larger than in pure PEN and PFP films, presumably because of more upright standing molecules and lack of interdigitation between the incommensurate crystalline PEN and PFP layers. The findings are important for the development of novel organic quantum optoelectronic devices.
Engineering the oxygen coordination in digital superlattices
Cook, Seyoung; Andersen, Tassie K.; Hong, Hawoong; Rosenberg, Richard A.; Marks, Laurence D.; Fong, Dillon D.
2017-12-01
The oxygen sublattice in complex oxides is typically composed of corner-shared polyhedra, with transition metals at their centers. The electronic and chemical properties of the oxide depend on the type and geometric arrangement of these polyhedra, which can be controlled through epitaxial synthesis. Here, we use oxide molecular beam epitaxy to create SrCoOx:SrTiO3 superlattices with tunable oxygen coordination environments and sublattice geometries. Using synchrotron X-ray scattering in combination with soft X-ray spectroscopy, we find that the chemical state of Co can be varied with the polyhedral arrangement, with higher Co oxidation states increasing the valence band maximum. This work demonstrates a new strategy for engineering unique electronic structures in the transition metal oxides using short-period superlattices.
Superlattices of platinum and palladium nanoparticles
Energy Technology Data Exchange (ETDEWEB)
MARTIN,JAMES E.; WILCOXON,JESS P.; ODINEK,JUDY G.; PROVENCIO,PAULA P.
2000-04-06
The authors have used a nonionic inverse micelle synthesis technique to form nanoclusters of platinum and palladium. These nanoclusters can be rendered hydrophobic or hydrophilic by the appropriate choice of capping ligand. Unlike Au nanoclusters, Pt nanoclusters show great stability with thiol ligands in aqueous media. Alkane thiols, with alkane chains ranging from C{sub 6} to C{sub 18} were used as hydrophobic ligands, and with some of these they were able to form 2-D and/or 3-D superlattices of Pt nanoclusters as small as 2.7 nm in diameter. Image processing techniques were developed to reliably extract from transmission electron micrographs (TEMs) the particle size distribution, and information about the superlattice domains and their boundaries. The latter permits one to compute the intradomain vector pair correlation function of the particle centers, from which they can accurately determine the lattice spacing and the coherent domain size. From these data the gap between the particles in the coherent domains can be determined as a function of the thiol chain length. It is found that as the thiol chain length increases, the gaps between particles within superlattice domains increases, but more slowly than one might expect, possibly indicating thiol chain interdigitation.
Unconventional superconductivity in magic-angle graphene superlattices
Cao, Yuan; Fatemi, Valla; Fang, Shiang; Watanabe, Kenji; Taniguchi, Takashi; Kaxiras, Efthimios; Jarillo-Herrero, Pablo
2018-04-01
The behaviour of strongly correlated materials, and in particular unconventional superconductors, has been studied extensively for decades, but is still not well understood. This lack of theoretical understanding has motivated the development of experimental techniques for studying such behaviour, such as using ultracold atom lattices to simulate quantum materials. Here we report the realization of intrinsic unconventional superconductivity—which cannot be explained by weak electron–phonon interactions—in a two-dimensional superlattice created by stacking two sheets of graphene that are twisted relative to each other by a small angle. For twist angles of about 1.1°—the first ‘magic’ angle—the electronic band structure of this ‘twisted bilayer graphene’ exhibits flat bands near zero Fermi energy, resulting in correlated insulating states at half-filling. Upon electrostatic doping of the material away from these correlated insulating states, we observe tunable zero-resistance states with a critical temperature of up to 1.7 kelvin. The temperature–carrier-density phase diagram of twisted bilayer graphene is similar to that of copper oxides (or cuprates), and includes dome-shaped regions that correspond to superconductivity. Moreover, quantum oscillations in the longitudinal resistance of the material indicate the presence of small Fermi surfaces near the correlated insulating states, in analogy with underdoped cuprates. The relatively high superconducting critical temperature of twisted bilayer graphene, given such a small Fermi surface (which corresponds to a carrier density of about 1011 per square centimetre), puts it among the superconductors with the strongest pairing strength between electrons. Twisted bilayer graphene is a precisely tunable, purely carbon-based, two-dimensional superconductor. It is therefore an ideal material for investigations of strongly correlated phenomena, which could lead to insights into the physics of high
Thermoelectric cross-plane properties on p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices
Energy Technology Data Exchange (ETDEWEB)
Ferre Llin, L.; Samarelli, A. [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Cecchi, S.; Chrastina, D.; Isella, G. [L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Müller Gubler, E. [ETH, Electron Microscopy ETH Zurich, Wolgang-Pauli-Str. Ch-8093 Zurich (Switzerland); Etzelstorfer, T.; Stangl, J. [Johannes Kepler Universität, Institute of Semiconductor and Solid State Physics, A-4040 Linz (Austria); Paul, D.J., E-mail: Douglas.Paul@glasgow.ac.uk [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)
2016-03-01
Silicon and germanium materials have demonstrated an increasing attraction for energy harvesting, due to their sustainability and integrability with complementary metal oxide semiconductor and micro-electro-mechanical-system technology. The thermoelectric efficiencies for these materials, however, are very poor at room temperature and so it is necessary to engineer them in order to compete with telluride based materials, which have demonstrated at room temperature the highest performances in literature [1]. Micro-fabricated devices consisting of mesa structures with integrated heaters, thermometers and Ohmic contacts were used to extract the cross-plane values of the Seebeck coefficient and the thermal conductivity from p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices. A second device consisting in a modified circular transfer line method structure was used to extract the electrical conductivity of the materials. A range of p-Ge/Si{sub 0.5}Ge{sub 0.5} superlattices with different doping levels was investigated in detail to determine the role of the doping density in dictating the thermoelectric properties. A second set of n-Ge/Si{sub 0.3}Ge{sub 0.7} superlattices was fabricated to study the impact that quantum well thickness might have on the two thermoelectric figures of merit, and also to demonstrate a further reduction of the thermal conductivity by scattering phonons at different wavelengths. This technique has demonstrated to lower the thermal conductivity by a 25% by adding different barrier thicknesses per period. - Highlights: • Growth of epitaxial Ge/SiGe superlattices on Si substrates as energy harvesters • Study of cross-plane thermoelectric properties of Ge/SiGe superlattices at 300 K • Thermoelectric figures of merit studied as a function of doping density • Phonon scattering at different wavelengths to reduce thermal transport.
Wave-function reconstruction in a graded semiconductor superlattice
DEFF Research Database (Denmark)
Lyssenko, V. G.; Hvam, Jørn Märcher; Meinhold, D.
2004-01-01
We reconstruct a test wave function in a strongly coupled, graded well-width superlattice by resolving the spatial extension of the interband polarisation and deducing the wave function employing non-linear optical spectroscopy. The graded gap superlattice allows us to precisely control the dista...
Thermal Conductivity of Graphene-hBN Superlattice Ribbons.
Felix, Isaac M; Pereira, Luiz Felipe C
2018-02-09
Superlattices are ideal model systems for the realization and understanding of coherent (wave-like) and incoherent (particle-like) phonon thermal transport. Single layer heterostructures of graphene and hexagonal boron nitride have been produced recently with sharp edges and controlled domain sizes. In this study we employ nonequilibrium molecular dynamics simulations to investigate the thermal conductivity of superlattice nanoribbons with equal-sized domains of graphene and hexagonal boron nitride. We analyze the dependence of the conductivity with the domain sizes, and with the total length of the ribbons. We determine that the thermal conductivity reaches a minimum value of 89 W m -1 K -1 for ribbons with a superlattice period of 3.43 nm. The effective phonon mean free path is also determined and shows a minimum value of 32 nm for the same superlattice period. Our results also reveal that a crossover from coherent to incoherent phonon transport is present at room temperature for BNC nanoribbons, as the superlattice period becomes comparable to the phonon coherence length. Analyzing phonon populations relative to the smallest superlattice period, we attribute the minimum thermal conductivity to a reduction in the population of flexural phonons when the superlattice period equals 3.43 nm. The ability to manipulate thermal conductivity using superlattice-based two-dimensional materials, such as graphene-hBN nanoribbons, opens up opportunities for application in future nanostructured thermoelectric devices.
Superlattice doped layers for amorphous silicon photovoltaic cells
Arya, Rajeewa R.
1988-01-12
Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.
MBE growth and characterisation of light rare-earth superlattices
DEFF Research Database (Denmark)
Ward, R.C.C.; Wells, M.R.; Bryn-Jacobsen, C.
1996-01-01
The molecular beam epitaxy growth techniques which have already successfully produced a range of heavy rare-earth superlattices have now been extended to produce superlattices of two light rare-earth elements, Nd/Pr, as well as superlattices and alloy films of a heavy/light system, Ho/Pr. High......-resolution X-ray diffraction analysis shows the Nd/Pr superlattices to be of high structural quality, while the Ho/Pr superlattices are significantly less so. In the Ho/Pr superlattices, Pr is found to retain its bulk dhcp crystal structure even in thin layers (down to 6 atomic planes thick) sandwiched between...... thick layers of hcp Ho. In addition, neutron diffraction studies of the He/Pr superlattices have shown that the helical Ho magnetic order is not coherent through the dhcp Pr layers, in contrast to previous hcp/hcp superlattices Ho/Y, Ho/Lu and Ho/Er. The series of Ho:Pr alloy films has shown structural...
Superlattice configurations in linear chain hydrocarbon binary mixtures
Indian Academy of Sciences (India)
Unknown
Long-chain alkanes; binary mixtures; superlattices; discrete orientational changes. 1. Introduction ... tem and a model of superlattice configuration was proposed4, in terms of .... C18 system,4 the angle with value = 3⋅3° was seen to play an ...
Band structure of superlattice with δ-like potential
International Nuclear Information System (INIS)
Gashimzade, N.F.; Gashimzade, F.M.; Hajiev, A.T.
1993-08-01
Band structure of superlattice with δ-like potential has been calculated taking into account interaction of carriers of different kinds. Superlattices of semiconductors with degenerated valence band and zero-gap semiconductors have been considered. For the latter semimetal-semiconductor transition has been obtained. (author). 8 refs, 1 fig
Investigation of switching region in superlattice phase change memories
Ohyanagi, T.; Takaura, N.
2016-10-01
We investigated superlattice phase change memories (PCMs) to clarify which regions were responsible for switching. We observed atomic structures in a superlattice PCM film with a stack of GeTe / Sb2Te3 layers using atomically resolved EDX maps, and we found an intermixed region with three atom species of the Ge, Sb and Te around the top GeTe layer under the top electrode. We also found that a device with a GeTe layer on an Sb2Te3 layer without superlattice structure had the same switching characteristics as a device with a superlattice PCM, that had the same top GeTe layer. We developed and fabricated a modified superlattice PCM that attained ultra low Reset / Set currents under 60 μ A .
Wire breakage in SLC wire profile monitors
International Nuclear Information System (INIS)
Field, C.; McCormick, D.; Raimondi, P.; Ross, M.
1998-05-01
Wire scanning beam profile monitors are used at the Stanford Linear Collider (SLC) for emittance preservation control and beam optics optimization. Twenty such scanners have proven most useful for this purpose and have performed a total of 1.5 million scans in the 4 to 6 years since their installation. Most of the essential scanners are equipped with 20 to 40 microm tungsten wires. SLC bunch intensities and sizes often exceed 2 x 10 7 particles/microm 2 (3C/m 2 ). The authors believe that this has caused a number of tungsten wire failures that appear at the ends of the wire, near the wire support points, after a few hundred scans are accumulated. Carbon fibers, also widely used at SLAC, have been substituted in several scanners and have performed well. In this paper, the authors present theories for the wire failure mechanism and techniques learned in reducing the failures
Two-dimensional thermoelectric Seebeck coefficient of SrTiO3-based superlattices
International Nuclear Information System (INIS)
Ohta, Hiromichi
2008-01-01
This review provides the origin of the unusually large thermoelectric Seebeck coefficient vertical stroke S vertical stroke of a two-dimensional electron gas confined within a unit cell layer thickness (∝0.4 nm) of a SrTi 0.8 Nb 0.2 O 3 layer of artificial superlattices of SrTiO 3 /SrTi 0.8 Nb 0.2 O 3 [H. Ohta et al., Nature Mater. 6, 129 (2007)]. The vertical stroke S vertical stroke 2D values of the[(SrTiO 3 ) 17 /(SrTi 0.8 Nb 0.2 O 3 ) y ] 20 superlattice increase proportional to y -0.5 , and reach 290 μV K -1 (y=1) at room temperature, which is ∝5 times larger than that of the SrTi 0.8 Nb 0.2 O 3 bulk (vertical stroke S vertical stroke 3D =61 μVK -1 ), proving that the density of states in the ground state for SrTiO 3 increases in inverse proportion to y. The critical barrier thickness for quantum electron confinement is also clarified to be 6.25 nm (16 unit cells of SrTiO 3 ). Significant structural changes are not observed in the superlattice after annealing at 900 K in a vacuum. The value of vertical stroke S vertical stroke 2D of the superlattice gradually increases with temperature and reaches 450 μVK -1 at 900 K, which is ∝3 times larger than that of bulk SrTi 0.8 Nb 0.2 O 3 . These observations provide clear evidence that the [(SrTiO 3 ) 17 /(SrTi 0.8 Nb 0.2 O 3 ) 1 ] 20 superlattice is stable and exhibits a giant vertical stroke S vertical stroke even at high temperature. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Ge/SiGe superlattices for nanostructured thermoelectric modules
International Nuclear Information System (INIS)
Chrastina, D.; Cecchi, S.; Hague, J.P.; Frigerio, J.; Samarelli, A.; Ferre–Llin, L.; Paul, D.J.; Müller, E.; Etzelstorfer, T.; Stangl, J.; Isella, G.
2013-01-01
Thermoelectrics are presently used in a number of applications for both turning heat into electricity and also for using electricity to produce cooling. Mature Si/SiGe and Ge/SiGe heteroepitaxial growth technology would allow highly efficient thermoelectric materials to be engineered, which would be compatible and integrable with complementary metal oxide silicon micropower circuits used in autonomous systems. A high thermoelectric figure of merit requires that electrical conductivity be maintained while thermal conductivity is reduced; thermoelectric figures of merit can be improved with respect to bulk thermoelectric materials by fabricating low-dimensional structures which enhance the density of states near the Fermi level and through phonon scattering at heterointerfaces. We have grown and characterized Ge-rich Ge/SiGe/Si superlattices for nanofabricated thermoelectric generators. Low-energy plasma-enhanced chemical vapor deposition has been used to obtain nanoscale-heterostructured material which is several microns thick. Crystal quality and strain control have been investigated by means of high resolution X-ray diffraction. High-resolution transmission electron microscopy images confirm the material and interface quality. Electrical conductivity has been characterized by the mobility spectrum technique. - Highlights: ► High-quality Ge/SiGe multiple quantum wells for thermoelectric applications ► Mobility spectra of systems featuring a large number of parallel conduction channels ► Competitive thermoelectric properties measured in single devices
Energy Technology Data Exchange (ETDEWEB)
Ji, Pengfei; Zhang, Yuwen, E-mail: zhangyu@missouri.edu [Department of Mechanical and Aerospace Engineering, University of Missouri, Columbia, Missouri 65211 (United States); Yang, Mo [College of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093 (China)
2013-12-21
The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.
International Nuclear Information System (INIS)
Ji, Pengfei; Zhang, Yuwen; Yang, Mo
2013-01-01
The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective
Ji, Pengfei; Zhang, Yuwen; Yang, Mo
2013-12-01
The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.
Energy Technology Data Exchange (ETDEWEB)
Aezami, A., E-mail: a.aezami@gmail.com; Abolhassani, M.; Elahi, M.
2016-05-15
Magnetic structures and Curie temperatures of the (LaMnO{sub 3}){sub m}/(SrTiO{sub 3}){sub n} superlattices (SLm–n) with m=1, 2, 3 and n=1, 2, 3, 8 were investigated, using density functional theory implemented in Quantum-Espresso open source code. By applying on-site coulomb interaction (Hubbard term U) to Ti atoms for all of these superlattices, using Stoner–Wolfarth model, it was found that the magnetic order of interfacial atoms of these superlattices changed to ferromagnetic by implying U=5 eV on Ti atoms. The inclusion of electron–electron correlation with U=5 eV on the Ti atoms for all of the superlattices made the two dimensional electron gas (2DEG) formed at the interfaces, half-metallic. The obtained values of Curie temperature, calculated within mean field approximation with U=5 eV on the Ti atoms, are in good agreement with the experimental results. - Highlights: • Calculated the magnetic structure and Curie temperature of the (LaMnO{sub 3}){sub m}/(SrTiO{sub 3}){sub n} superlattices with m=1, 2, 3 and n=1, 2, 3, 8 by mean field approximation. • By implying U=5 eV on the Ti atoms, the magnetic order of interfacial atoms of these superlattices has changed to ferromagnetic. • The 2DEG formed at the interface half-metallic have made in these superlattices by the inclusion of electron-electron correlation with U=5 eV on the Ti atoms for all of the superlattices.
Base Information Transport Infrastructure Wired (BITI Wired)
2016-03-01
2016 Major Automated Information System Annual Report Base Information Transport Infrastructure Wired (BITI Wired) Defense Acquisition Management...Combat Information Transport System program was restructured into two pre-Major Automated Information System (pre-MAIS) components: Information...Major Automated Information System MAIS OE - MAIS Original Estimate MAR – MAIS Annual Report MDA - Milestone Decision Authority MDD - Materiel
International Nuclear Information System (INIS)
Hong Sun
1998-11-01
The quantum confined Stark effect (QCSE) of excitons in GaAs/AlAs corrugated lateral surface superlattices (CLSSLs) is calculated. Blue and red shifts in the exciton energies are predicted for the heavy- and light-excitons in the CLSSLs, respectively, comparing with those in the unmodulated quantum well due to the different effective hole masses in the parallel direction. Sensitive dependence of the QCSE on the hole effective mass in the parallel direction is expected because of the ''centre-of-mass'' quantization (CMQ) induced by the periodic corrugated interfaces of the CLSSLs. The effect of the CMQ on the exciton mini-bands and the localization of the excitons in the CLSSLs is discussed. (author)
Engineering the oxygen coordination in digital superlattices
Energy Technology Data Exchange (ETDEWEB)
Cook, Seyoung [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Department of Materials Science, Northwestern University, Evanston, Illinois 60202, USA; Andersen, Tassie K. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Department of Materials Science, Northwestern University, Evanston, Illinois 60202, USA; Hong, Hawoong [X-Ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Rosenberg, Richard A. [X-Ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Marks, Laurence D. [Department of Materials Science, Northwestern University, Evanston, Illinois 60202, USA; Fong, Dillon D. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
2017-12-01
The oxygen sublattice in the complex oxides is typically composed of corner-shared polyhedra, with transition metals at their centers. The electronic and chemical properties of the oxide depend on the type and geometric arrangement of these polyhedra, which can be controlled through epitaxial synthesis. Here, we use oxide molecular beam epitaxy to create SrCoOx:SrTiO3 superlattices with tunable oxygen coordination environments and sublattice geometries. Using soft X-ray spectroscopy, we find that the chemical state of Co can be varied with the polyhedral arrangement, demonstrating a new strategy for achieving unique electronic properties in the transition metal oxides.
Anisotropic critical fields in superconducting superlattices
International Nuclear Information System (INIS)
Banerjee, I.; Yang, Q.S.; Falco, C.M.; Schuller, I.K.
1983-01-01
The temperature and angular dependence of critical fields (H/sub c/) have been studied as a function of layer thickness for superconducting Nb/Cu superlattices. For layer thicknesses between 100 and 300 A, dimensional crossover has been observed in the temperature dependence of H/sub c/. Associated with the crossover we find a change in the angular dependence of H/sub c/ to that given by the effective-mass theory. This is the first time that a relationship has been found between dimensional crossover observed in the temperature dependence and that in the angular dependence of critical fields
Wire bonding in microelectronics
Harman, George G
2010-01-01
Wire Bonding in Microelectronics, Third Edition, has been thoroughly revised to help you meet the challenges of today's small-scale and fine-pitch microelectronics. This authoritative guide covers every aspect of designing, manufacturing, and evaluating wire bonds engineered with cutting-edge techniques. In addition to gaining a full grasp of bonding technology, you'll learn how to create reliable bonds at exceedingly high yields, test wire bonds, solve common bonding problems, implement molecular cleaning methods, and much more. Coverage includes: Ultrasonic bonding systems and technologies, including high-frequency systems Bonding wire metallurgy and characteristics, including copper wire Wire bond testing Gold-aluminum intermetallic compounds and other interface reactions Gold and nickel-based bond pad plating materials and problems Cleaning to improve bondability and reliability Mechanical problems in wire bonding High-yield, fine-pitch, specialized-looping, soft-substrate, and extreme-temperature wire bo...
Novel electronic structures of superlattice composed of graphene and silicene
International Nuclear Information System (INIS)
Yu, S.; Li, X.D.; Wu, S.Q.; Wen, Y.H.; Zhou, S.; Zhu, Z.Z.
2014-01-01
Highlights: • Graphene/silicene superlattices exhibit metallic electronic properties. • Dirac point of graphene is folded to the Γ-point in the superlattice system. • Significant changes in the transport properties of the graphene layers are expected. • Small amount of charge transfer from the graphene to the silicene layers is found. - Abstract: Superlattice is a major force in providing man-made materials with unique properties. Here we report a study of the structural and electronic properties of a superlattice made with alternate stacking of graphene and hexagonal silicene. Three possible stacking models, i.e., the top-, bridge- and hollow-stacking, are considered. The top-stacking is found to be the most stable pattern. Although both the free-standing graphene and silicene are semi-metals, our results suggest that the graphene and silicene layers in the superlattice both exhibit metallic electronic properties due to a small amount of charge transfer from the graphene to the silicene layers. More importantly, the Dirac point of graphene is folded to the Γ-point of the superlattice, instead of the K-point in the isolated graphene. Such a change in the Dirac point of graphene could lead to significant change in the transportation property of the graphene layer. Moreover, the band structure and the charge transfer indicate that the interaction between the stacking sheets in the graphene/silicene superlattice is more than just the van der Waals interaction
Surface electron structure of short-period semiconductor superlattice
International Nuclear Information System (INIS)
Bartos, I.; Czech Academy Science, Prague,; Strasser, T.; Schattke, W.
2004-01-01
Full text: Semiconductor superlattices represent man-made crystals with unique physical properties. By means of the directed layer-by-layer molecular epitaxy growth their electric properties can be tailored (band structure engineering). Longer translational periodicity in the growth direction is responsible for opening of new electron energy gaps (minigaps) with surface states and resonances localized at superlattice surfaces. Similarly as for the electron structure of the bulk, a procedure enabling to modify the surface electron structure of superlattices is desirable. Short-period superlattice (GaAs) 2 (AlAs) 2 with unreconstructed (100) surface is investigated in detail. Theoretical description in terms of full eigenfunctions of individual components has to be used. The changes of electron surface state energies governed by the termination of a periodic crystalline potential, predicted on simple models, are confirmed for this system. Large surface state shifts are found in the lowest minigap of the superlattice when this is terminated in four different topmost layer configurations. The changes should be observable in angle resolved photoelectron spectroscopy as demonstrated in calculations based on the one step model of photoemission. Surface state in the center of the two dimensional Brillouin zone moves from the bottom of the minigap (for the superlattice terminated by two bilayers of GaAs) to its top (for the superlattice terminated by two bilayers of AlAs) where it becomes a resonance. No surface state/resonance is found for a termination with one bilayer of AlAs. The surface state bands behave similarly in the corresponding gaps of the k-resolved section of the electron band structure. The molecular beam epitaxy, which enables to terminate the superlattice growth with atomic layer precision, provides a way of tuning the superlattice surface electron structure by purely geometrical means. The work was supported by the Grant Agency of the Academy of Sciences
International Nuclear Information System (INIS)
Papp, E.; Micu, C.; Racolta, D.
2013-01-01
In this paper one deals with the theoretical derivation of energy bands and of related wavefunctions characterizing quasi 1D semiconductor heterostructures, such as InAs quantum wire models. Such models get characterized this time by equal coupling strength superpositions of Rashba and Dresselhaus spin-orbit interactions of dimensionless magnitude a under the influence of in-plane magnetic fields of magnitude B. We found that the orientations of the field can be selected by virtue of symmetry requirements. For this purpose one resorts to spin conservations, but alternative conditions providing sensible simplifications of the energy-band formula can be reasonably accounted for. Besides the wavenumber k relying on the 1D electron, one deals with the spin-like s=±1 factors in the front of the square root term of the energy. Having obtained the spinorial wavefunction, opens the way to the derivation of spin precession effects. For this purpose one resorts to the projections of the wavenumber operator on complementary spin states. Such projections are responsible for related displacements proceeding along the Ox-axis. This results in a 2D rotation matrix providing both the precession angle as well as the precession axis
Porada, S.; Sales, B.B.; Hamelers, H.V.M.; Biesheuvel, P.M.
2012-01-01
We show the significant potential of water desalination using a novel capacitive wire-based technology in which anode/cathode wire pairs are constructed from coating a thin porous carbon electrode layer on top of electrically conducting rods (or wires). By alternately dipping an array of electrode
Microwave absorption in YBCO/PrBCO superlattices
International Nuclear Information System (INIS)
Carlos, W.E.; Kaplan, R.; Lowndes, D.H.; Norton, D.P.
1992-01-01
In this paper, non-resonant microwave absorption is employed to probe YBCO/PrBCO superlattices and compare the response to that of a YBCO film. Near the transition temperatures, the response of the superlattice samples and the YBCO film have similar amplitudes and orientation dependencies. At lower temperatures, the response of the superlattices is much stronger than that of the YBCO film and, while both responses are hysteretic at low temperatures, the widths of the hysteresis have opposite orientation dependencies, which the authors attribute to the role of the PrBCO layers
Electronic structure of superlattices of graphene and hexagonal boron nitride
Kaloni, Thaneshwor P.
2011-11-14
We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.
ZnSe/ZnSeTe Superlattice Nanotips
Directory of Open Access Journals (Sweden)
Young SJ
2010-01-01
Full Text Available Abstract The authors report the growth of ZnSe/ZnSeTe superlattice nanotips on oxidized Si(100 substrate. It was found the nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from the ZnSe/ZnSeTe superlattice nanotips were much larger than that observed from the homogeneous ZnSeTe nanotips. Furthermore, it was found that activation energies for the ZnSe/ZnSeTe superlattice nanotips with well widths of 16, 20, and 24 nm were 76, 46, and 19 meV, respectively.
Electronic structure of superlattices of graphene and hexagonal boron nitride
Kaloni, Thaneshwor P.; Cheng, Yingchun; Schwingenschlö gl, Udo
2011-01-01
We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.
Excitation on breather (bion) in superlattice
International Nuclear Information System (INIS)
Mensah, S.Y.; Allotey, F.K.A.; Mensah, N.G.
1999-09-01
Soliton breather excitation in superlattice has been studied in this paper. It is observed that under certain conditions, the vector potential equation for the electromagnetic wave propagating through the superlattice assumes the sine-Gordon(sG) equation. The solution of which does not give only a soliton but also a soliton breather. The binding energy of the breather is calculated to be E b = 16γ(1 - sin ν), γ = (1 - u 2 /v 0 2 ) -1/2 where u is the velocity of the breather and v 0 is the velocity of the electromagnetic wave in the absence of electrons. As can be seen, when ν → π/2 the binding energy tends to zero, hence, the breather disintegrates into a soliton and antisoliton. It was further observed that the binding energy decreases with an increase in Δ (the half miniband width) for a given value of d (SL period). Similarly it also decreases with increase in d for a given value of Δ. Comparing the breather's rest energy E b to that of soliton E s i.e E b = 2E s sin ν. We noted that the breather's rest energy is less than that required to excite a soliton. (author)
Magnetic profiles in ferromagnetic/superconducting superlattices.
Energy Technology Data Exchange (ETDEWEB)
te Velthuis, S. G. E.; Hoffmann, A.; Santamaria, J.; Materials Science Division; Univ. Complutense de Madrid
2007-02-28
The interplay between ferromagnetism and superconductivity has been of longstanding fundamental research interest to scientists, as the competition between these generally mutually exclusive types of long-range order gives rise to a rich variety of physical phenomena. A method of studying these exciting effects is by investigating artificially layered systems, i.e. alternating deposition of superconducting and ferromagnetic thin films on a substrate, which enables a straight-forward combination of the two types of long-range order and allows the study of how they compete at the interface over nanometer length scales. While originally studies focused on low temperature superconductors interchanged with metallic ferromagnets, in recent years the scope has broadened to include superlattices of high T{sub c} superconductors and colossal magnetoresistance oxides. Creating films where both the superconducting as well as the ferromagnetic layers are complex oxide materials with similar crystal structures (Figure 1), allows the creation of epitaxial superlattices, with potentially atomically flat and ordered interfaces.
Organic p-n heterostructures and superlattices
Energy Technology Data Exchange (ETDEWEB)
Kowarik, Stefan [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Hinderhofer, Alexander; Gerlach, Alexander; Schreiber, Frank [Institut fuer Angewandte Physik, Tuebingen (Germany); Osso, Oriol [MATGAS 2000 A.I.E., Esfera UAB, Barcelona (Spain); Wang, Cheng; Hexemer, Alexander [Advanced Light Source, Berkeley, CA (United States)
2009-07-01
For many applications of organic semiconductors two components such as e.g. n and p-type layers are required, and the morphology of such heterostructures is crucial for their performance. Pentacene (PEN) is one of the most promising p-type molecular semiconductors and recently perfluoro-pentacene (PFP) has been identified as a good electron conducting material for complementary circuits with PEN. We use soft and hard X-ray reflectivity measurements, scanning transmission X-ray microscopy (STXM) and atomic force microscopy for structural investigations of PFP-PEN heterostructures. The chemical contrast between PEN and PFP in STXM allows us to determine the lateral length scales of p and n domains in a bilayer. For a superlattice of alternating PFP and PEN layers grown by organic molecular beam deposition, X-ray reflectivity measurements demonstrate good structural order. We find a superlattice reflection that varies strongly when tuning the X-ray energy around the fluorine edge, demonstrating that there are indeed alternating PFP and PEN layers.
1970-01-01
A wire chamber used at CERN's Proton Synchrotron accelerator in the 1970s. Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.
Effect of wire shape on wire array discharge
Energy Technology Data Exchange (ETDEWEB)
Shimomura, N.; Tanaka, Y.; Yushita, Y.; Nagata, M. [University of Tokushima, Department of Electrical and Electronic Engineering, Tokushima (Japan); Teramoto, Y.; Katsuki, S.; Akiyama, H. [Kumamoto University, Department of Electrical and Computer Engineering, Kumamoto (Japan)
2001-09-01
Although considerable investigations have been reported on z-pinches to achieve nuclear fusion, little attention has been given from the point of view of how a wire array consisting of many parallel wires explodes. Instability existing in the wire array discharge has been shown. In this paper, the effect of wire shape in the wire array on unstable behavior of the wire array discharge is represented by numerical analysis. The claws on the wire formed in installation of wire may cause uniform current distribution on wire array. The effect of error of wire diameter in production is computed by Monte Carlo Method. (author)
Effect of wire shape on wire array discharge
International Nuclear Information System (INIS)
Shimomura, N.; Tanaka, Y.; Yushita, Y.; Nagata, M.; Teramoto, Y.; Katsuki, S.; Akiyama, H.
2001-01-01
Although considerable investigations have been reported on z-pinches to achieve nuclear fusion, little attention has been given from the point of view of how a wire array consisting of many parallel wires explodes. Instability existing in the wire array discharge has been shown. In this paper, the effect of wire shape in the wire array on unstable behavior of the wire array discharge is represented by numerical analysis. The claws on the wire formed in installation of wire may cause uniform current distribution on wire array. The effect of error of wire diameter in production is computed by Monte Carlo Method. (author)
Scaling properties of optical reflectance from quasi-periodic superlattices
International Nuclear Information System (INIS)
Wu Xiang; Yao Hesheng; Feng Weiguo
1991-08-01
The scaling properties of the optical reflectance from two types of quasi-periodic metal-insulator superlattices, one with the structure of Cantor bars and the other with the structure of Cantorian-Fibonaccian train, have been studied for the region of s-polarized soft x-rays and extreme ultraviolet. By using the hydrodynamic model of electron dynamics and transfer-matrix method, and be taking into account retardation effects, we have presented the formalism of the reflectivity for the superlattices. From our numerical results, we found that the reflection spectra of the quasi-superlattices have a rich structure of self-similarity. The interesting scaling indices, which are related to the fractal dimensions, of the spectra are also discussed for the two kinds of the quasi-superlattices. (author). 10 refs, 7 figs
Development of Strained-Layer Superlattice (SLS) IR Detector Camera
National Aeronautics and Space Administration — Strained Layer Superlattice (SLS) detectors are a new class of detectors which may be the next generation of band-gap engineered, large format infrared detector...
Participation of mechanical oscillations in thermodynamics of crystals with superlattice
International Nuclear Information System (INIS)
Jacjimovski K, S.; Mirjanicj Lj, D.; Shetrajchicj P, J.
2012-01-01
The superlattice, consisting of two periodically repeating films, is analyzed in proposal paper. Due to the structural deformations and small thickness, the acoustic phonons do not appear in these structures. The spontaneous appearance of phonons is possible in an ideal structure only. Therefore the thermodynamical analysis of phonon subsystems is the first step in investigations of superlattice properties. Internal energy as well as specific heat will be analyzed, too. Low-temperature behavior of these quantities will be compared to the corresponding quantities of bulk structures and of thin films. The general conclusion is that the main thermodynamic characteristics of superlattices are considerably lower than those of the bulk structure. Consequently, their superconductive characteristics are better than the superconductive characteristics of corresponding bulk structures. Generally considered, the application field of superlattices is wider than that of bulk structures and films. (Author)
Transmission of electrons with flat passbands in finite superlattices
International Nuclear Information System (INIS)
Barajas-Aguilar, A H; Rodríguez-Magdaleno, K A; Martínez-Orozco, J C; Enciso-Muñoz, A; Contreras-Solorio, D A
2013-01-01
Using the transfer matrix method and the Ben Daniel-Duke equation for variable mass electrons propagation, we calculate the transmittance for symmetric finite superlattices where the width and the height of the potential barriers follow a linear dependence. The width and height of the barriers decreases from the center to the ends of the superlattice. The transmittance presents intervals of stopbands and quite flat passbands.
Fabrication of C60/amorphous carbon superlattice structures
International Nuclear Information System (INIS)
Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi
2001-01-01
The nitrogen doping effects in C 60 films by RF plasma source was investigated, and it was found that the nitrogen ion bombardment broke up C 60 molecules and changed them into amorphous carbon. Based on these results, formation of C 60 /amorphous carbon superlattice structure was proposed. The periodic structure of the resulted films was confirmed by XRD measurements, as the preliminary results of fabrication of the superlattice structure
Ground state energy of a polaron in a superlattice
International Nuclear Information System (INIS)
Mensah, S.Y.; Allotey, F.K.A.; Nkrumah, G.; Mensah, N.G.
2000-10-01
The ground state energy of a polaron in a superlattice was calculated using the double-time Green functions. The effective mass of the polaron along the planes perpendicular to the superlattice axis was also calculated. The dependence of the ground state energy and the effective mass along the planes perpendicular to the superlattice axis on the electron-phonon coupling constant α and on the superlattice parameters (i.e. the superlattice period d and the bandwidth Δ) were studied. It was observed that if an infinite square well potential is assumed, the ground state energy of the polaron decreases (i.e. becomes more negative) with increasing α and d, but increases with increasing Δ. For small values of α, the polaron ground state energy varies slowly with Δ, becoming approximately constant for large Δ. The effective mass along the planes perpendicular to the superlattice axis was found to be approximately equal to the mass of an electron for all typical values of α, d and Δ. (author)
Quantum oscillation and the Aharonov-Bohm effect in a multiply connected normal-conductor loop
Takai, Daisuke; Ohta, Kuniichi
1994-12-01
The magnetostatic and electrostatic Aharonov-Bohm (AB) effects in multiply connected normal-conductor rings are studied. A previously developed model of a single mesoscopic ring is generalized to include an arbitrary number of rings, and the oscillatory behavior of the total transmission coefficients for the serially connected N (N is equal to integer) rings are derived as a function of the magnetic flux threading each ring and as a function of the electrostatic potential applied to the rings. It is shown that quantum oscillation of multiple rings exhibits greater variety of behavior than in periodic superlattices. We investigate the influence of the scattering at a junction and the number of atoms in the ring in both magnetostatic and electrostatic oscillation of multiring systems. For the electrostatic AB effects, when scattering occurs at the junctions between the connecting wire and the ring, the conductance in the AB oscillation is modified to an N-1 peaked shape. It is shown that this oscillatory behavior is greatly influenced by the number of atoms in the ring and is controlled by the electrostatic potential or magnetic flux that is applied to the ring. We discuss the behavior of the quantum oscillations upon varying the number of connected rings and the number of minibands.
International Nuclear Information System (INIS)
Poccia, N.; Ricci, A.; Bianconi, N.
2010-01-01
High-temperature superconductivity (HTS) emerges in quite different electronic materials: cuprates, diborides, and iron-pnictide superconductors. Looking for unity in the diversity we find in all these materials a common lattice architecture: they are practical realizations of heterostructures at atomic limit made of superlattices of metallic active layers intercalated by spacers as predicted in 1993 by one of us. The multilayer architecture is the key feature for the presence of electronic topological transitions where the Fermi surface of one of the subbands changes dimensionality. The superlattice misfit strain η between the active and spacer layers is shown to be a key variable to drive the system to the highest critical temperature Tc that occurs at a particular point of the 3D phase diagram Tc(θ, η) where d is the charge transfer or doping. The plots of Tc as a function of misfit strain at constant charge transfer in cuprates show a first-order quantum critical phase transition where an itinerant striped magnetic phase competes with superconductivity in the proximity of a structural phase transition, that is, associated with an electronic topological transition. The shape resonances in these multi gap superconductors is associated with the maximum Tc.
Superconducting superlattices. Les super reseaux de supraconducteurs
Energy Technology Data Exchange (ETDEWEB)
Triscone, J M; Fischer, O [Geneva Univ. (Switzerland)
1993-03-01
By piling up ultra-thin layers of discrete materials, physicists now have a choice method for the study of superconductivity at high temperature. These superlattices are prepared by successive layers of YBaCuO and PrBaCuO deposited by cathode sputtering to study the variation of superconductivity with layer thickness. The transition temperature decreases rapidly when the distance between two layers increases. Current vortices are created, without a magnetic field, widening the transition temperature. The variation of resistivity near critical temperature in a magnetic field shows that the energy required to displace vortices is increasing with the thickness of the YBaCuO layer, with thin layers anisotropy is high and energy dissipation is important. (G.R.). refs., figs.
Matter-Wave Solitons In Optical Superlattices
International Nuclear Information System (INIS)
Louis, Pearl J. Y.; Ostrovskaya, Elena A.; Kivshar, Yuri S.
2006-01-01
In this work we show that the properties of both bright and dark Bose-Einstein condensate (BEC) solitons trapped in optical superlattices can be controlled by changing the shape of the trapping potential whilst maintaining a constant periodicity and lattice height. Using this method we can control the properties of bright gap solitons by dispersion management. We can also control the interactions between dark lattice solitons. In addition we demonstrate a method for controlled generation of matter-wave gap solitons in stationary optical lattices by interfering two condensate wavepackets, producing a single wavepacket at a gap edge with properties similar to a gap soliton. As this wavepacket evolves, it forms a bright gap soliton
Adamatzky, Andrew
2014-01-01
In experimental laboratory studies we evaluate a possibility of making electrical wires from living plants. In scoping experiments we use lettuce seedlings as a prototype model of a plant wire. We approximate an electrical potential transfer function by applying direct current voltage to the lettuce seedlings and recording output voltage. We analyse oscillation frequencies of the output potential and assess noise immunity of the plant wires. Our findings will be used in future designs of self...
Quasi free-standing silicene in a superlattice with hexagonal boron nitride
Kaloni, T. P.; Tahir, M.; Schwingenschlö gl, Udo
2013-01-01
We study a superlattice of silicene and hexagonal boron nitride by first principles calculations and demonstrate that the interaction between the layers of the superlattice is very small. As a consequence, quasi free-standing silicene is realized
Merlin , R.; Bajema , K.; Nagle , J.; Ploog , K.
1987-01-01
We report structural studies of incommensurate and random GaAs-AlAs superlattices using Raman scattering by acoustic phonons. Properties of the structure factor of Fibonacci and Thue-Morse superlattices are discussed in some detail.
National Aeronautics and Space Administration — This Small Business Innovation Research Phase I project will investigate a new architecture for photovoltaic devices based on nanotechnology: photovoltaic wire. The...
Charpak hemispherical wire chamber
1970-01-01
pieces. Mesures are of the largest one. Multi-wire detectors contain layers of positively and negatively charged wires enclosed in a chamber full of gas. A charged particle passing through the chamber knocks negatively charged electrons out of atoms in the gas, leaving behind positive ions. The electrons are pulled towards the positively charged wires. They collide with other atoms on the way, producing an avalanche of electrons and ions. The movement of these electrons and ions induces an electric pulse in the wires which is collected by fast electronics. The size of the pulse is proportional to the energy loss of the original particle.
Tunable superlattice in graphene to control the number of Dirac points.
Dubey, Sudipta; Singh, Vibhor; Bhat, Ajay K; Parikh, Pritesh; Grover, Sameer; Sensarma, Rajdeep; Tripathi, Vikram; Sengupta, K; Deshmukh, Mandar M
2013-09-11
Superlattice in graphene generates extra Dirac points in the band structure and their number depends on the superlattice potential strength. Here, we have created a lateral superlattice in a graphene device with a tunable barrier height using a combination of two gates. In this Letter, we demonstrate the use of lateral superlattice to modify the band structure of graphene leading to the emergence of new Dirac cones. This controlled modification of the band structure persists up to 100 K.
1998 wire development workshop proceedings
International Nuclear Information System (INIS)
1998-04-01
This report consists of vugraphs of the presentations at the conference. The conference was divided into the following sessions: (1) First Generation Wire Development: Status and Issues; (2) First Generation Wire in Pre-Commercial Prototypes; (3) Second Generation Wire Development: Private Sector Progress and Issues; (4) Second Generation Wire Development: Federal Laboratories; and (5) Fundamental Research Issues for HTS Wire Development
1998 wire development workshop proceedings
Energy Technology Data Exchange (ETDEWEB)
NONE
1998-04-01
This report consists of vugraphs of the presentations at the conference. The conference was divided into the following sessions: (1) First Generation Wire Development: Status and Issues; (2) First Generation Wire in Pre-Commercial Prototypes; (3) Second Generation Wire Development: Private Sector Progress and Issues; (4) Second Generation Wire Development: Federal Laboratories; and (5) Fundamental Research Issues for HTS Wire Development.
Turner-Evans, Dan
Over the past five years, the cost of solar panels has dropped drastically and, in concert, the number of installed modules has risen exponentially. However, solar electricity is still more than twice as expensive as electricity from a natural gas plant. Fortunately, wire array solar cells have emerged as a promising technology for further lowering the cost of solar. Si wire array solar cells are formed with a unique, low cost growth method and use 100 times less material than conventional Si cells. The wires can be embedded in a transparent, flexible polymer to create a free-standing array that can be rolled up for easy installation in a variety of form factors. Furthermore, by incorporating multijunctions into the wire morphology, higher efficiencies can be achieved while taking advantage of the unique defect relaxation pathways afforded by the 3D wire geometry. The work in this thesis shepherded Si wires from undoped arrays to flexible, functional large area devices and laid the groundwork for multijunction wire array cells. Fabrication techniques were developed to turn intrinsic Si wires into full p-n junctions and the wires were passivated with a-Si:H and a-SiNx:H. Single wire devices yielded open circuit voltages of 600 mV and efficiencies of 9%. The arrays were then embedded in a polymer and contacted with a transparent, flexible, Ni nanoparticle and Ag nanowire top contact. The contact connected >99% of the wires in parallel and yielded flexible, substrate free solar cells featuring hundreds of thousands of wires. Building on the success of the Si wire arrays, GaP was epitaxially grown on the material to create heterostructures for photoelectrochemistry. These cells were limited by low absorption in the GaP due to its indirect bandgap, and poor current collection due to a diffusion length of only 80 nm. However, GaAsP on SiGe offers a superior combination of materials, and wire architectures based on these semiconductors were investigated for multijunction
Spectral correlations in Anderson insulating wires
Marinho, M.; Micklitz, T.
2018-01-01
We calculate the spectral level-level correlation function of Anderson insulating wires for all three Wigner-Dyson classes. A measurement of its Fourier transform, the spectral form factor, is within reach of state-of-the-art cold atom quantum quench experiments, and we find good agreement with recent numerical simulations of the latter. Our derivation builds on a representation of the level-level correlation function in terms of a local generating function which may prove useful in other contexts.
International Nuclear Information System (INIS)
Brown, B M; Eastham, M S P; Wood, I G
2009-01-01
We consider a quantum (or leaky) wire in the plane, and the wire supports a singular attraction which becomes large at distant points on the wire. An analogous regular potential arises from the motion of a hydrogen atom in an electric field. We prove that, as in the regular case, the spectrum is the whole of (-∞, ∞)
Energy Technology Data Exchange (ETDEWEB)
Brown, B M; Eastham, M S P [Department of Computer Science, Cardiff University, Cardiff, CF24 3XF (United Kingdom); Wood, I G [Institute of Mathematics and Physics, Aberystwyth University, Penglais, Aberystwyth, Ceredigion, SY23 3BZ (United Kingdom)], E-mail: malcolm@cs.cf.ac.uk, E-mail: mandh@chesilhay.fsnet.co.uk, E-mail: iww@aber.ac.uk
2009-02-06
We consider a quantum (or leaky) wire in the plane, and the wire supports a singular attraction which becomes large at distant points on the wire. An analogous regular potential arises from the motion of a hydrogen atom in an electric field. We prove that, as in the regular case, the spectrum is the whole of (-{infinity}, {infinity})
DEFF Research Database (Denmark)
Naik, Gururaj V.; Saha, Bivas; Liu, Jing
2014-01-01
, we address these issues by realizing an epitaxial superlattice as an HMM. The superlattice consists of ultrasmooth layers as thin as 5 nm and exhibits sharp interfaces which are essential for high-quality HMM devices. Our study reveals that such a TiN-based superlattice HMM provides a higher PDOS...
Formation Energies of Native Point Defects in Strained-Layer Superlattices (Postprint)
2017-06-05
potential; bulk materials; total energy calculations; entropy; strained- layer superlattice (SLS) 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF...AFRL-RX-WP-JA-2017-0217 FORMATION ENERGIES OF NATIVE POINT DEFECTS IN STRAINED- LAYER SUPERLATTICES (POSTPRINT) Zhi-Gang Yu...2016 Interim 11 September 2013 – 5 November 2016 4. TITLE AND SUBTITLE FORMATION ENERGIES OF NATIVE POINT DEFECTS IN STRAINED- LAYER SUPERLATTICES
The 640 × 512 LWIR type-II superlattice detectors operating at 110 K
Tan, Bi-Song; Zhang, Chuan-Jie; Zhou, Wen-Hong; Yang, Xiao-Jie; Wang, Guo-Wei; Li, Yun-Tao; Ding, Yan-Yan; Zhang, Zhou; Lei, Hua-Wei; Liu, Wei-Hua; Du, Yu; Zhang, Li-Fang; Liu, Bin; Wang, Li-Bao; Huang, Li
2018-03-01
The type-II InAs/GaSb superlattices (T2SLs)-based 640 × 512 long wavelength infrared (LWIR) Focal Plane Array (FPA) detector with15 μm pitch and 50% cut-off wavelength of 10.5 μm demonstrates a peak quantum efficiency of 38.6% and peak detectivity of 1.65 × 1011 cm Hz1/2 W-1 at 8.1 μm, high pixel operability of 99.5% and low responsivity non-uniformity of 2.69% at 80 K. The FPA exhibits clear infrared imaging at 110 K and diffusion-limited dark current densities below Tennant's 'Rule07' at temperature above 100 K, which is attributed to the efficient suppression of diffusion dark current and surface leak current by introducing M-structure barrier and double hetero-structure passivation layers.
Electric-field domain boundary instability in weakly coupled semiconductor superlattices
Energy Technology Data Exchange (ETDEWEB)
Rasulova, G. K., E-mail: rasulova@sci.lebedev.ru [P.N. Lebedev Physical Institute of Russian Academy of Sciences, 119991 Moscow (Russian Federation); Pentin, I. V. [Moscow State Pedagogical University, 119991 Moscow (Russian Federation); Brunkov, P. N. [A. F. Ioffe Physical and Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); National Research University of Information Technologies, Mechanics and Optics, 197101 St. Petersburg (Russian Federation); Egorov, A. Yu. [National Research University of Information Technologies, Mechanics and Optics, 197101 St. Petersburg (Russian Federation)
2016-05-28
Damped oscillations of the current were observed in the transient current pulse characteristics of a 30-period weakly coupled GaAs/AlGaAs superlattice (SL). The switching time of the current is exponentially decreased as the voltage is verged towards the current discontinuity region indicating that the space charge necessary for the domain boundary formation is gradually accumulated in a certain SL period in a timescale of several hundreds ns. The spectral features in the electroluminescence spectra of two connected in parallel SL mesas correspond to the energy of the intersubband transitions and the resonance detuning of subbands caused by charge trapping in the quantum wells (QWs) residing in a region of the expanded domain boundary. The obtained results support our understanding of the origin of self-oscillations as a cyclic dynamics of the subband structure in the QWs forming the expanded domain boundary.
Cold atoms near surfaces: designing potentials by sculpturing wires
International Nuclear Information System (INIS)
Della Pietra, Leonardo; Aigner, Simon; Hagen, Christoph vom; Lezec, Henri J; Schmiedmayer, Joerg
2005-01-01
The magnetic trapping potentials for atoms on atom chips are determined by the current flow pattern in the chip wires. By modifying the wire shape using focused ion beam nano-machining we can design specialized current flow patterns and therefore micro-design the magnetic trapping potentials. We give designs for a barrier, a quantum dot, and a double well or double barrier and show preliminary experiments with ultra cold atoms in these designed potentials
Commercial and Industrial Wiring.
Kaltwasser, Stan; Flowers, Gary
This module is the third in a series of three wiring publications, includes additional technical knowledge and applications required for job entry in the commercial and industrial wiring trade. The module contains 15 instructional units that cover the following topics: blueprint reading and load calculations; tools and equipment; service;…
Magnetoresistance peculiarities of bismuth wires in high magnetic field
Energy Technology Data Exchange (ETDEWEB)
Condrea, E., E-mail: condrea@nano.asm.md [Institute of Electronic Engineering and Nanotechnologies, Academy of Science of Moldova, 2028 Chisinau, Republic of Moldova (Moldova, Republic of); International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, 51-421 Wroclaw (Poland); Gilewski, A. [International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, 51-421 Wroclaw (Poland); MagNet, 50-421 Wroclaw (Poland); Nicorici, A. [Institute of Electronic Engineering and Nanotechnologies, Academy of Science of Moldova, 2028 Chisinau, Republic of Moldova (Moldova, Republic of)
2016-03-11
Magnetoresistance measurements of Bi wires performed in the magnetic field oriented along the bisector axis revealed unexpected anomalous peaks in a high magnetic field far above the quantum limit of the electrons. By combining a magnetic field and an uniaxial strain, we obtained a modification of the electronic structure; as a result, the quantum limit for light and heavy electrons is changed in a different way. For the case where heavy electrons are in the quantum limit, a correlation between the exit of the lowest Landau level of light electrons and the Lifshitz transition was found. - Highlights: • Glass-coated single-crystalline Bi wires attain high limit of elastic strain of up to 3.0%. • Selective modification of the electronic structure of Bi wires is obtained by combining a high magnetic field and uniaxial strain. • The correlation between the exit of the lowest Landau level of electrons and Lifshitz transition was found.
Magnetoresistance peculiarities of bismuth wires in high magnetic field
International Nuclear Information System (INIS)
Condrea, E.; Gilewski, A.; Nicorici, A.
2016-01-01
Magnetoresistance measurements of Bi wires performed in the magnetic field oriented along the bisector axis revealed unexpected anomalous peaks in a high magnetic field far above the quantum limit of the electrons. By combining a magnetic field and an uniaxial strain, we obtained a modification of the electronic structure; as a result, the quantum limit for light and heavy electrons is changed in a different way. For the case where heavy electrons are in the quantum limit, a correlation between the exit of the lowest Landau level of light electrons and the Lifshitz transition was found. - Highlights: • Glass-coated single-crystalline Bi wires attain high limit of elastic strain of up to 3.0%. • Selective modification of the electronic structure of Bi wires is obtained by combining a high magnetic field and uniaxial strain. • The correlation between the exit of the lowest Landau level of electrons and Lifshitz transition was found.
Control of the interparticle spacing in gold nanoparticle superlattices
Energy Technology Data Exchange (ETDEWEB)
MARTIN,JAMES E.; WILCOXON,JESS P.; ODINEK,JUDY G.; PROVENCIO,PAULA P.
2000-04-06
The authors have investigated the formation of 2-D and 3-D superlattices of Au nanoclusters synthesized in nonionic inverse micelles, and capped with alkyl thiol ligands, with alkane chains ranging from C{sub 6} to C1{sub 18}. The thiols are found to play a significant role in the ripening of these nanoclusters, and in the formation of superlattices. Image processing techniques were developed to reliably extract from transmission electron micrographs (TEMs) the particle size distribution, and information about the superlattice domains and their boundaries. The latter permits one to compute the intradomain vector pair correlation function, from which one can accurately determine the lattice spacing and the coherent domain size. From these data the gap between the particles in the coherent domains can be determined as a function of the thiol chain length. It is found that as the thiol chain length increases, the nanoclusters become more polydisperse and larger, and the gaps between particles within superlattice domains increases. Annealing studies at elevated temperatures confirm nanocluster ripening. Finally, the effect of the particle gaps on physical properties is illustrated by computing the effective dielectric constant, and it is shown that the gap size now accessible in superlattices is rather large for dielectric applications.
Characterization of the Nb-B superlattice system
Energy Technology Data Exchange (ETDEWEB)
Franco, D.G.; Sarmiento-Chavez, A.; Schenone, N.; Llacsahuanga Allcca, A.E.; Gómez Berisso, M.; Fasano, Y.; Guimpel, J., E-mail: jguimpel@cab.cnea.gov.ar
2016-12-15
Highlights: • In this manuscript we study the crystalline and superconducting properties of this system, as a possible material to be used in solid state neutron detector sensors. • The results show that this superlattice system can be grown even for very thin layers, in spite of the Nb-B binary system showing many possible compounds, which could enhance interdifussion at the interfaces. • Also, the superconducting properties are not degraded, and they are even enhanced with respect to those of single Nb films of the same thickness. • In conclusion, we find that this system is a good potential candidate for the design and construction of solid state neutron Transition Edge Sensors. - Abstract: We study the growth, stacking and superconducting properties of Nb and B thin films and superlattices. The interest in these resides in their possible use in transition edge neutron sensors. The samples were grown by magnetron sputtering over Si (1 0 0) substrates. The X-ray diffraction patterns for all Nb containing samples show a Nb (1 1 0) preferential orientation. From the low-angle X-ray reflectivity we obtain information on the superlattice structure. The superconducting transition temperatures of the superlattices, obtained from the temperature dependence of the magnetization, are higher than those of single Nb films of similar thickness. The temperature dependence of the perpendicular and parallel upper critical fields indicate that the superlattices behave as an array of decoupled superconducting Nb layers.
Characterization of the Nb-B superlattice system
International Nuclear Information System (INIS)
Franco, D.G.; Sarmiento-Chavez, A.; Schenone, N.; Llacsahuanga Allcca, A.E.; Gómez Berisso, M.; Fasano, Y.; Guimpel, J.
2016-01-01
Highlights: • In this manuscript we study the crystalline and superconducting properties of this system, as a possible material to be used in solid state neutron detector sensors. • The results show that this superlattice system can be grown even for very thin layers, in spite of the Nb-B binary system showing many possible compounds, which could enhance interdifussion at the interfaces. • Also, the superconducting properties are not degraded, and they are even enhanced with respect to those of single Nb films of the same thickness. • In conclusion, we find that this system is a good potential candidate for the design and construction of solid state neutron Transition Edge Sensors. - Abstract: We study the growth, stacking and superconducting properties of Nb and B thin films and superlattices. The interest in these resides in their possible use in transition edge neutron sensors. The samples were grown by magnetron sputtering over Si (1 0 0) substrates. The X-ray diffraction patterns for all Nb containing samples show a Nb (1 1 0) preferential orientation. From the low-angle X-ray reflectivity we obtain information on the superlattice structure. The superconducting transition temperatures of the superlattices, obtained from the temperature dependence of the magnetization, are higher than those of single Nb films of similar thickness. The temperature dependence of the perpendicular and parallel upper critical fields indicate that the superlattices behave as an array of decoupled superconducting Nb layers.
Absence of confinement in (SrTiO3)/( SrTi0.8Nb0.2O3 ) superlattices
Bouzerar, G.; Thébaud, S.; Bouzerar, R.; Pailhès, S.; Adessi, Ch.
2018-03-01
The reduction of dimensionality is considered an efficient pathway to boost the performances of thermoelectric materials. Quantum confinement of the carriers is expected to induce large Seebeck coefficients (S ) and it also suppresses the thermal conductivity by increasing the phonon scattering processes. However, quantum confinement in superlattices is not always easy to achieve and needs to be carefully validated. In the past decade, large values of S have been measured in (SrTiO3)/(SrTi0.8Nb0.2O3 ) superlattices [H. Ohta et al., Nat. Mater. 6, 129 (2007), 10.1038/nmat1821; Y. Mune et al., Appl. Phys. Lett. 91, 192105 (2007), 10.1063/1.2809364]. In the δ -doped compound, the reported S was almost six times larger than that of the bulk material. This huge increase has been attributed to the two-dimensional carrier confinement in the doped regions. Here, we demonstrate that the experimental data are well explained quantitatively assuming delocalized electrons in both in-plane and growth directions. Moreover, we rule out the confined electron hypothesis whose signature would be the suppression of the Seebeck coefficient. This strongly suggests that the presupposed confinement picture in these superlattices is unlikely.
Magnetic structures of holmium-lutetium alloys and superlattices
DEFF Research Database (Denmark)
Swaddling, P.P.; Cowley, R.A.; Ward, R.C.C.
1996-01-01
Alloys and superlattices of Ho and Lu have been grown using molecular beam epitaxy and their magnetic structures determined using neutron-scattering techniques. The 4f moments in the alloys form a helix at all compositions with the moments aligned in the basal plane perpendicular to the wave vector...... of the helix remaining coherent through the nonmagnetic Lu blocks. The neutron scattering from the superlattices is consistent with a model in which there are different phase advances of the helix turn angle through the Ho and Lu blocks, but with a localized moment on the Ho sites only. A comparison...... of Ho and Lu. At low temperatures, for superlattices with fewer than approximately twenty atomic planes of Ho, the Ho moments within a block undergo a phase transition from helical to ferromagnetic order, with the coupling between successive blocks dependent on the thickness of the Lu spacer....
Stability and dynamic of strain mediated adatom superlattices on Cu
Kappus, Wolfgang
2013-03-01
Substrate strain mediated adatom equilibrium density distributions have been calculated for Cu surfaces using two complementing methods. A hexagonal adatom superlattice in a coverage range up to 0.045 ML is derived for repulsive short range interactions. For zero short range interactions a hexagonal superstructure of adatom clusters is derived in a coverage range about 0.08 ML. Conditions for the stability of the superlattice against formation of dimers or clusters and degradation are analyzed using simple neighborhood models. Such models are also used to investigate the dynamic of adatoms within their superlattice neighborhood. Collective modes of adatom diffusion are proposed from the analogy with bulk lattice dynamics and methods for measurement are suggested. The recently put forward explanation of surface state mediated interactions for superstructures found in scanning tunneling microscopy experiments is put in question and strain mediated interactions are proposed as an alternative.
Sm cluster superlattice on graphene/Ir(111)
Mousadakos, Dimitris; Pivetta, Marina; Brune, Harald; Rusponi, Stefano
2017-12-01
We report on the first example of a self-assembled rare earth cluster superlattice. As a template, we use the moiré pattern formed by graphene on Ir(111); its lattice constant of 2.52 nm defines the interparticle distance. The samarium cluster superlattice forms for substrate temperatures during deposition ranging from 80 to 110 K, and it is stable upon annealing to 140 K. By varying the samarium coverage, the mean cluster size can be increased up to 50 atoms, without affecting the long-range order. The spatial order and the width of the cluster size distribution match the best examples of metal cluster superlattices grown by atomic beam epitaxy on template surfaces.
Molecular dynamics simulation of thermal conductivities of superlattice nanowires
Institute of Scientific and Technical Information of China (English)
YANG; Juekuan(杨决宽); CHEN; Yunfei(陈云飞); YAN; Jingping(颜景平)
2003-01-01
Nonequilibrium molecular dynamics simulations were carried out to investigate heat transfer in superlattice nanowires. Results show that for fixed period length superlattice nanowires, the ratio of the total interfacial thermal resistance to the total thermal resistance and the effective thermal conductivities are invariant with the changes in interface numbers. Increasing the period length leads to an increase in the average interfacial thermal resistance, which indicates that the interfacial thermal resistance depends not only on the materials that constitute the alternating segments of superlattice nanowires, but also on the lattice strain throughout the segments. The modification of the lattice structure due to the lattice mismatch should be taken into account in the acoustic mismatch model. Simulation results also demonstrated the size confinement effect on the thermal conductivities for low dimensional structures, i.e. the thermal conductivities and the interfacial thermal resistance increase as the nanowire cross-sectional area increases.
Interface disorder and transport properties in HTC/CMR superlattices
International Nuclear Information System (INIS)
Haberkorn, N.; Guimpel, J.; Sirena, M.; Steren, L.B.; Campillo, G.; Saldarriaga, W.; Gomez, M.E.
2004-01-01
The physical properties of superlattices are affected by interface disorder, like roughness and interdiffusion. X-ray diffraction allows its measurement through modeling and structure refinement. The high-T c RBa 2 Cu 3 O 7 (RBCO) and colossal magnetoresistance La x A 1-x MnO 3 (LAMO) perovskites are interesting superlattice partners given their similar lattice parameters and because the combination of magnetic and superconducting properties is interesting for both basic and applied research. We have investigated the structural and transport properties of YBCO/La 2/3 Ca 1/3 MnO 3 and GdBCO/La 0.6 Sr 0.04 MnO 3 superlattices grown by sputtering on (1 0 0)MgO. We find a roughness of 1 RBCO unit cell and a 30% interdiffusion in the same length from the interfaces for all samples. The superconducting behavior is found strongly dependent on the LAMO layer thickness
Deep levels in silicon–oxygen superlattices
International Nuclear Information System (INIS)
Simoen, E; Jayachandran, S; Delabie, A; Caymax, M; Heyns, M
2016-01-01
This work reports on the deep levels observed in Pt/Al 2 O 3 /p-type Si metal-oxide-semiconductor capacitors containing a silicon–oxygen superlattice (SL) by deep-level transient spectroscopy. It is shown that the presence of the SL gives rise to a broad band of hole traps occurring around the silicon mid gap, which is absent in reference samples with a silicon epitaxial layer. In addition, the density of states of the deep layers roughly scales with the number of SL periods for the as-deposited samples. Annealing in a forming gas atmosphere reduces the maximum concentration significantly, while the peak energy position shifts from close-to mid-gap towards the valence band edge. Based on the flat-band voltage shift of the Capacitance–Voltage characteristics it is inferred that positive charge is introduced by the oxygen atomic layers in the SL, indicating the donor nature of the underlying hole traps. In some cases, a minor peak associated with P b dangling bond centers at the Si/SiO 2 interface has been observed as well. (paper)
Exploring graphene superlattices: Magneto-optical properties
Duque, C. A.; Hernández-Bertrán, M. A.; Morales, A. L.; de Dios-Leyva, M.
2017-02-01
We present a detailed study of magnetic subbands, wave functions, and transition strengths for graphene superlattices (SLs) subject to a perpendicular magnetic field. It is shown that, for a weak magnetic field, the flat subbands of a SL exhibiting extra Dirac points are grouped into subsets, each of which consists of a singlet subband and a nearly degenerate doublet subband, and one nearly degenerate triplet subband. It was found that the wave functions corresponding to a singlet or to a doublet are always located around the image in real space of the central or extra Dirac points in k-space. The latter properties were explained by assuming that the electron motion is quasi-classical. Our study revealed that, for an intermediate field, the general characteristics of the wave functions are very similar to those of the pristine graphene, while for weak field, their behavior is drastically different. The latter is characterized by rapid oscillations which were understood using the solutions provided by the formalism of Luttinger-Kohn. The study on transition strengths allows us to obtain, for SLs with extra Dirac points in a weak magnetic field and different polarizations, the conditions under which transitions between multiplets are approximately allowed. It was shown that these conditions correspond to an unusual selection rule that is broken when the magnetic field intensity increases from weak to an intermediate value.
Directory of Open Access Journals (Sweden)
Abbas Haddadi
2017-03-01
Full Text Available We report the demonstration of high-performance long-wavelength infrared (LWIR nBn photodetectors based on InAs/InAs1− xSbx type-II superlattices. A new saw-tooth superlattice design was used to implement the electron barrier of the photodetectors. The device exhibited a cut-off wavelength of ∼10 μ m at 77 K. The photodetector exhibited a peak responsivity of 2.65 A/W, corresponding to a quantum efficiency of 43%. With an R × A of 664 Ω · cm 2 and a dark current density of 8 × 10−5 A/cm2, under −80 mV bias voltage at 77 K, the photodetector exhibited a specific detectivity of 4.72 × 1011 cm· Hz / W and a background–limited operating temperature of 110 K.
International Nuclear Information System (INIS)
Blumers, Mathias
2012-01-01
The basic material property governing the efficiency of thermoelectric applications is the thermoelectric figure of merit Z=S 2 .σ/k, where S is the Seebeck-coefficient, σ is the electrical conductivity and k the thermal conductivity. A promising concept of increasing Z by one and two dimensional quantum well superlattices (QW-SL) was introduced in the early 1990s in terms of theoretical predictions. The realization of such low dimensional systems is done by use of semiconductor compounds with different energy gaps. The ambition of the Nitherma project was to investigate the thermoelectric properties of superlattices and Multi-Quantum-Well-structures (MQW) made of Pb 1-x Sr x Te and Bi 2 (Se x Te 1-x ) 3 , respectively. Therefore SL- and MQW-structures of this materials were grown and Z was determined by measuring of S, σ and κ parallel to the layer planes. Aim of this thesis is the interpretation of the transport measurements (S,σ,κ) of low dimensional structures and the improvement of preparation and measurement techniques. The influence of low dimensionality on the thermal conductivity in SL- and MQW-structures was investigated by measurements on structures with different layer thicknesses. In addition, measurements of the Seebeck-coefficient were performed, also to verify the results of the participating groups.
Adamatzky, Andrew
2014-08-01
In experimental laboratory studies we evaluate a possibility of making electrical wires from living plants. In scoping experiments we use lettuce seedlings as a prototype model of a plant wire. We approximate an electrical potential transfer function by applying direct current voltage to the lettuce seedlings and recording output voltage. We analyse oscillation frequencies of the output potential and assess noise immunity of the plant wires. Our findings will be used in future designs of self-growing wetware circuits and devices, and integration of plant-based electronic components into future and emergent bio-hybrid systems. Copyright © 2014 Elsevier Ireland Ltd. All rights reserved.
Thermosonic wire bonding of IC devices using palladium wire
International Nuclear Information System (INIS)
Shze, J.H.; Poh, M.T.; Tan, R.M.
1996-01-01
The feasibility of replacing gold wire by palladium wire in thermosonic wire bonding of CMOS and bipolar devices are studied in terms of the manufacturability, physical, electrical and assembly performance. The results that palladium wire is a viable option for bonding the bipolar devices but not the CMOS devices
Mixing of III-V compound semiconductor superlattices
International Nuclear Information System (INIS)
Mei, Ping.
1989-01-01
In this work, the methods as well as mechanisms of III-V compound superlattice mixing are discussed, with particular attention on the AlGaAs based superlattice system. Comparative studies of ion-induced mixing showed two distinct effects resulting from ion implantation followed by a thermal anneal; i.e. collisional mixing and impurity induced mixing. It was found that Ga and As ion induced mixing are mainly due to the collisional effect, where the extent of the mixing can be estimated theoretically, with the parameters of ion mass, incident energy and the implant dose. The impurity effect was dominant for Si, Ge, Be, Zn and Te. Quantitative studies of impurity induced mixing have been conducted on samples doped with Si or Te during the growth process. It was discovered that Si induced AlGaAs superlattice mixing yielded an activation energy of approximately 4 eV for the Al diffusion coefficient with a high power law dependence of the prefactor on the Si concentration. In the Te doped AlGaAs superlattice the Al diffusion coefficient exhibited an activation energy of ∼3.0 eV, with a prefactor approximately proportional to the Te concentration. These results are of importance in examining the current diffusion models. Zn and Si induced InP/InGaAs superlattice mixing are examined. It was found that Zn predominantly induces cation interdiffusion, while Si induces comparable cation and anion interdiffusion. In addition, widely dispersed Zn rich islands form with Zn residing in the InP layers in the form of Zn 3 P 2 . With unstrained starting material, the layer bandgap disparity increases due to mixing induced strain, while in the Si diffused sample the mixed region would be expected to exhibit bandgaps intermediate between those of the original layers. Semiconductor superlattice mixing shows technological potential for optoelectronic device fabrication
Transport in a magnetic field modulated graphene superlattice.
Li, Yu-Xian
2010-01-13
Using the transfer matrix method, we study the transport properties through a magnetic field modulated graphene superlattice. It is found that the electrostatic barrier, the magnetic vector potential, and the number of wells in a superlattice modify the transmission remarkably. The angular dependent transmission is blocked by the magnetic vector potential because of the appearance of the evanescent states at certain incident angles, and the region of Klein tunneling shifts to the left. The angularly averaged conductivities exhibit oscillatory behavior. The magnitude and period of oscillation depend sensitively on the height of the electrostatic barrier, the number of wells, and the strength of the modulated magnetic field.
Surface phonon polaritons in semi-infinite semiconductor superlattices
International Nuclear Information System (INIS)
Nkoma, J.S.
1986-07-01
Surface phonon polaritons in a semi-infinite semiconductor superlattice bounded by vacuum are studied. The modes associated with the polaritons are obtained and used to obtain the dispersion relation. Numerical results show that polariton bands exist between the TO and LO phonon frequencies, and are found to approach two surface mode frequencies in the limit of large tangential wave vector. Dependency of frequencies on the ratio of layer thicknesses is shown. Results are illustrated by a GaAs-GaP superlattice bounded by vacuum. (author)
A possible radiation-resistant solar cell geometry using superlattices
Goradia, C.; Clark, R.; Brinker, D.
1985-01-01
A solar cell structure is proposed which uses a GaAs nipi doping superlattice. An important feature of this structure is that photogenerated minority carriers are very quickly collected in a time shorter than bulk lifetime in the fairly heavily doped n and p layers and these carriers are then transported parallel to the superlattice layers to selective ohmic contacts. Assuming that these already-separated carriers have very long recombination lifetimes, due to their across an indirect bandgap in real space, it is argued that the proposed structure may exhibit superior radiation tolerance along with reasonably high beginning-of-life efficiency.
Interface properties of superlattices with artificially broken symmetry
International Nuclear Information System (INIS)
Lottermoser, Th.; Yamada, H.; Matsuno, J.; Arima, T.; Kawasaki, M.; Tokura, Y.
2007-01-01
We have used superlattices made of thin layers of transition metal oxides to design the so-called multiferroics, i.e. materials possessing simultaneously an electric polarization and a magnetic ordering. The polarization originates from the asymmetric stacking order accompanied by charge transfer effects, while the latter one also influences the magnetic properties of the interfaces. Due to the breaking of space and time-reversal symmetry by multiple ordering mechanism magnetic second harmonic generation is proven to be an ideal method to investigate the electric and magnetic properties of the superlattices
Spontaneous Superlattice Formation in Nanorods through PartialCation Exchange
Energy Technology Data Exchange (ETDEWEB)
Robinson, Richard D.; Sadtler, Bryce; Demchenko, Denis O.; Erdonmez, Can K.; Wang, Lin-Wang; Alivisatos, A. Paul
2007-03-14
Lattice mismatch strains are widely known to controlnanoscale pattern formation in heteroepitaxy, but such effects have notbeen exploited in colloidal nanocrystal growth. We demonstrate acolloidal route to synthesizing CdS-Ag2S nanorod superlattices throughpartial cation exchange. Strain induces the spontaneous formation ofperiodic structures. Ab initio calculations of the interfacial energy andmodeling of strain energies show that these forces drive theself-organization. The nanorod superlattices exhibit high stabilityagainst ripening and phase mixing. These materials are tunablenear-infrared emitters with potential applications as nanometer-scaleoptoelectronic devices.
Molecular wires acting as quantum heat ratchets.
Zhan, Fei; Li, Nianbei; Kohler, Sigmund; Hänggi, Peter
2009-12-01
We explore heat transfer in molecular junctions between two leads in the absence of a finite net thermal bias. The application of an unbiased time-periodic temperature modulation of the leads entails a dynamical breaking of reflection symmetry, such that a directed heat current may emerge (ratchet effect). In particular, we consider two cases of adiabatically slow driving, namely, (i) periodic temperature modulation of only one lead and (ii) temperature modulation of both leads with an ac driving that contains a second harmonic, thus, generating harmonic mixing. Both scenarios yield sizable directed heat currents, which should be detectable with present techniques. Adding a static thermal bias allows one to compute the heat current-thermal load characteristics, which includes the ratchet effect of negative thermal bias with positive-valued heat flow against the thermal bias, up to the thermal stop load. The ratchet heat flow in turn generates also an electric current. An applied electric stop voltage, yielding effective zero electric current flow, then mimics a solely heat-ratchet-induced thermopower ("ratchet Seebeck effect"), although no net thermal bias is acting. Moreover, we find that the relative phase between the two harmonics in scenario (ii) enables steering the net heat current into a direction of choice.
Molecular wires acting as quantum heat ratchets
Zhan, Fei; Li, Nianbei; Kohler, Sigmund; Hänggi, Peter
2009-01-01
We explore heat transfer in molecular junctions between two leads in the absence of a finite net thermal bias. The application of an unbiased, time-periodic temperature modulation of the leads entails a dynamical breaking of reflection symmetry, such that a directed heat current may emerge (ratchet effect). In particular, we consider two cases of adiabatically slow driving, namely (i) periodic temperature modulation of only one lead and (ii) temperature modulation of both leads with an ac dri...
Universal spin dynamics in quantum wires
Energy Technology Data Exchange (ETDEWEB)
Fajardo, E. A.; Zülicke, U.; Winkler, R.
2017-10-01
We discuss the universal spin dynamics in quasi-one-dimensional systems including the real spin in narrow-gap semiconductors like InAs and InSb, the valley pseudospin in staggered single-layer graphene, and the combination of real spin and valley pseudospin characterizing single-layer transition metal dichalcogenides (TMDCs) such as MoS2, WS2, MoS2, and WSe2. All these systems can be described by the same Dirac-like Hamiltonian. Spin-dependent observable effects in one of these systems thus have counterparts in each of the other systems. Effects discussed in more detail include equilibrium spin currents, current-induced spin polarization (Edelstein effect), and spin currents generated via adiabatic spin pumping. Our work also suggests that a long-debated spin-dependent correction to the position operator in single-band models should be absent.
Wire chambers: Trends and alternatives
Energy Technology Data Exchange (ETDEWEB)
Regler, Meinhard
1992-05-15
The subtitle of this year's Vienna Wire Chamber Conference - 'Recent Trends and Alternative Techniques' - signalled that it covered a wide range of science and technology. While an opening Vienna talk by wire chamber pioneer Georges Charpak many years ago began 'Les funerailles des chambres a fils (the burial of wire chambers)', the contrary feeling this year was that wire chambers are very much alive!.
Chauhan, Preeti S; Zhong, ZhaoWei; Pecht, Michael G
2014-01-01
This critical volume provides an in-depth presentation of copper wire bonding technologies, processes and equipment, along with the economic benefits and risks. Due to the increasing cost of materials used to make electronic components, the electronics industry has been rapidly moving from high cost gold to significantly lower cost copper as a wire bonding material. However, copper wire bonding has several process and reliability concerns due to its material properties. Copper Wire Bonding book lays out the challenges involved in replacing gold with copper as a wire bond material, and includes the bonding process changes—bond force, electric flame off, current and ultrasonic energy optimization, and bonding tools and equipment changes for first and second bond formation. In addition, the bond–pad metallurgies and the use of bare and palladium-coated copper wires on aluminum are presented, and gold, nickel and palladium surface finishes are discussed. The book also discusses best practices and re...
Efficient method for transport simulations in quantum cascade lasers
Directory of Open Access Journals (Sweden)
Maczka Mariusz
2017-01-01
Full Text Available An efficient method for simulating quantum transport in quantum cascade lasers is presented. The calculations are performed within a simple approximation inspired by Büttiker probes and based on a finite model for semiconductor superlattices. The formalism of non-equilibrium Green’s functions is applied to determine the selected transport parameters in a typical structure of a terahertz laser. Results were compared with those obtained for a infinite model as well as other methods described in literature.
Development of a Flow-Through SQUID System for Non-Destructive Evaluation of MRI Wire
National Research Council Canada - National Science Library
Wellstood, Frederick C
2007-01-01
...) superconducting quantum interference device (SQUID) system. The ability to detect small defects in km-long sections of NbTi magnet wire could improve the production yield of high-field magnets for power and medical applications...
Picosecond electron bunches from GaAs/GaAsP strained superlattice photocathode
International Nuclear Information System (INIS)
Jin, Xiuguang; Matsuba, Shunya; Honda, Yosuke; Miyajima, Tsukasa; Yamamoto, Masahiro; Utiyama, Takashi; Takeda, Yoshikazu
2013-01-01
GaAs/GaAsP strained superlattices are excellent candidates for use as spin-polarized electron sources. In the present study, picosecond electron bunches were successfully generated from such a superlattice photocathode. However, electron transport in the superlattice was much slower than in bulk GaAs. Transmission electron microscopy observations revealed that a small amount of variations in the uniformity of the layers was present in the superlattice. These variations lead to fluctuations in the superlattice mini-band structure and can affect electron transport. Thus, it is expected that if the periodicity of the superlattice can be improved, much faster electron bunches can be produced. - Highlights: • GaAs/GaAsP strained superlattices are excellent candidates for spin-polarized electron beam. • Pulse spin-polarized electron beam is required for investigating the magnetic domain change. • Picosecond electron bunches were achieved from GaAs/GaAsP superlattice photocathode. • TEM observation revealed a small disorder of superlattice layers. • Improvement of superlattice periodicity can achieve much faster electron bunches
Localization in superlattices with randomness in layer thickness
International Nuclear Information System (INIS)
Yuan Jian; Tsai Chienhua.
1987-08-01
The localization length for electrons in superlattices with randomness in layer thickness is studied in both the commensurate and the incommensurate cases. It is demonstrated that disorder limits the electrons to see only structures within the extent of their wave functions and to be hardly effected by any long range correlation. (author). 4 refs, 6 figs
) m /SrVO3 ( m = 5, 6) Superlattices
Dai, Qingqing; Lü ders, Ulrike; Fré sard, Raymond; Eckern, Ulrich; Schwingenschlö gl, Udo
2018-01-01
The (LaV3+O3)m/SrV4+O3 (m = 5, 6) superlattices are investigated by first principles calculations. While bulk LaVO3 is a C‐type antiferromagnetic semiconductor and bulk SrVO3 is a paramagnetic metal, semiconducting A‐type antiferromagnetic states
Second harmonic generation in generalized Thue-Morse ferroelectric superlattices
International Nuclear Information System (INIS)
Wang Longxiang; Yang Xiangbo; Chen Tongsheng
2009-01-01
In this paper the second harmonic generation (SHG) in generalized Thue-Morse (GTM(m, n)) ferroelectric superlattices is studied. Under the small-signal approximation, the SHG spectra in both real and reciprocal spaces are investigated. It is found that: (1) only when the structure parameters l, l A , and l B are all chosen to be proper, can SHG in GTM(m, n) ferroelectric superlattices be generated; (2) for Family A of generalized Thue-Morse, GTM(m, 1) ferroelectric systems, with the increase of parameter m, the intense peaks of SHG concentrate on the long wavelength 1.4-1.5μm (the fundamental beam (FB) wavelength is within 0.8-1.5μm), but for Family B of generalized Thue-Morse, GTM(1, n) ferroelectric superlattices, with the increase of parameter n, the intense peaks of SHG concentrate on the middle wavelength 1.1-1.2μm; and (3) for GTM(m, 1) ferroelectric superlattices, the bigger the m, the stronger the relative integral intensity (RII) of SHG would be, but for GTM(1, n) ferroelectric systems, the bigger the n, the weaker the RII of SHG would be.
Recent results on heterojunctions and superlattices: transport and optics
International Nuclear Information System (INIS)
Voos, M.
1983-01-01
Recent experimental results obtained on two-dimensional semiconductor structures, namely heterojunctions and superlattices are presented. This review, which includes both optical and transport experiments, is not exhaustive, but describes briefly some investigations which are thought to be important from the point of view of fundamental physics. (Author) [pt
Phonon dispersion relations in monoatomic superlattices: a transfer matrix theory
International Nuclear Information System (INIS)
Albuquerque, E.L. de; Fulco, P.
1986-01-01
We present a lattice dynamical theory for monoatomic superlattices consisting of alternating layers of two different materials. Using a transfer matrix method we obtain explicit the equation for dispersion of the phonon's bulk modes, including the well known result in the long wave-length limit which can be obtained by elasticity theory. An illustation is shown and its features discussed. (Author) [pt
A CPA study of the phonon structure of disordered superlattices
International Nuclear Information System (INIS)
Shijie Xiong; Gendi Pang; Chienhua Tsai.
1985-08-01
The phonon structure of superlattices or modulated alloys with substitutional disorder is studied in the Coherent Phase Approximation (CPA). We consider first the case with diagonal disorder only, by adopting a virtual crystal approximation for the force constants. Then we treat the more complicated case with inclusion of off-diagonal disorder. Numerical examples are also studied in both cases. (author)
Designing Optical Properties in DNA-Programmed Nanoparticle Superlattices
Ross, Michael Brendan
A grand challenge of modern science has been the ability to predict and design the properties of new materials. This approach to the a priori design of materials presents a number of challenges including: predictable properties of the material building blocks, a programmable means for arranging such building blocks into well understood architectures, and robust models that can predict the properties of these new materials. In this dissertation, we present a series of studies that describe how optical properties in DNA-programmed nanoparticle superlattices can be predicted prior to their synthesis. The first chapter provides a history and introduction to the study of metal nanoparticle arrays. Chapter 2 surveys and compares several geometric models and electrodynamics simulations with the measured optical properties of DNA-nanoparticle superlattices. Chapter 3 describes silver nanoparticle superlattices (rather than gold) and identifies their promise as plasmonic metamaterials. In chapter 4, the concept of plasmonic metallurgy is introduced, whereby it is demonstrated that concepts from materials science and metallurgy can be applied to the optical properties of mixed metallic plasmonic materials, unveiling rich and tunable optical properties such as color and asymmetric reflectivity. Chapter 5 presents a comprehensive theoretical exploration of anisotropy (non-spherical) in nanoparticle superlattice architectures. The role of anisotropy is discussed both on the nanoscale, where several desirable metamaterial properties can be tuned from the ultraviolet to near-infrared, and on the mesoscale, where the size and shape of a superlattice is demonstrated to have a pronounced effect on the observed far-field optical properties. Chapter 6 builds upon those theoretical data presented in chapter 5, including the experimental realization of size and shape dependent properties in DNA-programmed superlattices. Specifically, nanoparticle spacing is explored as a parameter that
Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung
2018-04-01
This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.
High brightness single photon sources based on photonic wires
DEFF Research Database (Denmark)
Claudon, J.; Bleuse, J.; Bazin, M.
2009-01-01
We present a novel single-photon-source based on the emission of a semiconductor quantum dot embedded in a single-mode photonic wire. This geometry ensures a very large coupling (> 95%) of the spontaneous emission to the guided mode. Numerical simulations show that a photon collection efficiency...
International Nuclear Information System (INIS)
Harty, R.B.
1991-01-01
The development of the wire core system for Nuclear Thermal Propulsion (NTP) that took place from 1963 to 1965 is discussed. A wire core consists of a fuel wire with spacer wires. It's an annular flow core having a central control rod. There are actually four of these, with beryllium solid reflectors on both ends and all the way around. Much of the information on the concept is given in viewgraph form. Viewgraphs are presented on design details of the wire core, the engine design, engine weight vs. thrust, a technique used to fabricate the wire fuel element, and axial temperature distribution
X-ray grazing incidence study of inhomogeneous strain relaxation in Si/SiGe wires
International Nuclear Information System (INIS)
Hesse, A.; Zhuang, Y.; Holy, V.; Stangl, J.; Zerlauth, S.; Schaeffler, F.; Bauer, G.; Darowski, N.; Pietsch, U.
2003-01-01
The elastic strain relaxation in a series of dry-etched periodic multilayer Si/SiGe wire samples with different etching depths was investigated systematically by means of grazing incidence diffraction (GID). The samples were patterned by holographic lithography and reactive ion etching from a Si/SiGe superlattice grown by molecular beam epitaxy. Scanning electron microscopy and atomic force microscopy were employed to obtain information on the shape of the wires. The inhomogeneous strain distribution in the etched wires and in the non-etched part of the multilayers was derived by means of finite element calculations which were used as an input for simulations of the scattered X-ray intensities in depth dependent GID. The theoretical calculations for the scattered intensities are based on distorted-wave Born approximation. The unperturbed scattering potential was chosen with a reduced optical density corresponding to the ratio of wire width and wire period, in order to reflect the main interaction between the incident X-rays and the patterned samples. The calculations are in good agreement with the experimental data demonstrating the variation of strain relaxation with depth
DEFF Research Database (Denmark)
Jepsen, Kim Sune Karrasch; Bertilsson, Margareta
2017-01-01
dimension of life science through a notion of public politics adopted from the political theory of John Dewey. We show how cochlear implantation engages different social imaginaries on the collective and individual levels and we suggest that users share an imaginary of being “wired to freedom” that involves...... new access to social life, continuous communicative challenges, common practices, and experiences. In looking at their lives as “wired to freedom,” we hope to promote a wider spectrum of civic participation in the benefit of future life science developments within and beyond the field of Cochlear...
Coker, A J
1992-01-01
Electric Wiring: Domestic, Tenth Edition, is a clear and reliable guide to the practical aspects of domestic electric wiring. Intended for electrical contractors, installation engineers, wiremen and students, its aim is to provide essential up to date information on modern methods and materials in a simple, clear, and concise manner. The main changes in this edition are those necessary to bring the work into line with the 16th Edition of the Regulations for Electrical Installations issued by the Institution of Electrical Engineers. The book begins by introducing the basic features of domestic
Steward, W E
2012-01-01
Continuously in print since 1952, Modern Wiring Practice has now been fully revised to provide an up-to-date source of reference to building services design and installation in the 21st century. This compact and practical guide addresses wiring systems design and electrical installation together in one volume, creating a comprehensive overview of the whole process for contractors and architects, as well as electricians and other installation engineers. Best practice is incorporated throughout, combining theory and practice with clear and accessible explanation, all
Stability and Dynamic of strain mediated Adatom Superlattices on Cu<111>
Kappus, Wolfgang
2012-01-01
Substrate strain mediated adatom density distributions have been calculated for Cu surfaces. Complemented by Monte Carlo calculations a hexagonal close packaged adatom superlattice in a coverage range up to 0.045 ML is derived. Conditions for the stability of the superlattice against nucleation and degradation are analyzed using simple neighborhood models. Such models are also used to investigate the dynamic of adatoms within their superlattice neighborhood. Collective modes of adatom diffusi...
Magnetoresistance peculiarities of bismuth wires in high magnetic field
Condrea, E.; Gilewski, A.; Nicorici, A.
2016-03-01
Magnetoresistance measurements of Bi wires performed in the magnetic field oriented along the bisector axis revealed unexpected anomalous peaks in a high magnetic field far above the quantum limit of the electrons. By combining a magnetic field and an uniaxial strain, we obtained a modification of the electronic structure; as a result, the quantum limit for light and heavy electrons is changed in a different way. For the case where heavy electrons are in the quantum limit, a correlation between the exit of the lowest Landau level of light electrons and the Lifshitz transition was found.
Computer simulation of the anomalous elastic behavior of thin films and superlattices
International Nuclear Information System (INIS)
Wolf, D.
1992-10-01
Atomistic simulations are reviewed that elucidate the causes of the anomalous elastic behavior of thin films and superlattices (the so-called supermodulus effect). The investigation of free-standing thin films and of superlattices of grain boundaries shows that the supermodulus effect is not an electronic but a structural interface effect intricately connected with the local atomic disorder at the interfaces. The consequent predictions that (1) coherent strained-layer superlattices should show the smallest elastic anomalies and (2) the introduction of incoherency at the interfaces should enhance all anomalies are validated by simulations of dissimilar-material superlattices. 38 refs, 10 figs
International Nuclear Information System (INIS)
Dodin, E.P.; Zharov, A.A.
2003-01-01
The effect of the strong high-frequency electromagnetic field on the lateral semiconductor superlattice is considered on the basis of the quasi-classical theory on the electron transport in the self-consistent wave arrangement. It is theoretically identified, that the lateral superlattice in the strong feed-up wave field may emit the terahertz radiation wave trains, which are associated with the periodical excitation of the Bloch oscillations in the superlattice. The conditions, required for the Bloch oscillators radiation observation, are determined. The spectral composition of the radiation, passing through the superlattice, and energy efficiency of multiplying the frequency, related to the Bloch oscillator excitation, are calculated [ru
Quasi free-standing silicene in a superlattice with hexagonal boron nitride
Kaloni, T. P.
2013-11-12
We study a superlattice of silicene and hexagonal boron nitride by first principles calculations and demonstrate that the interaction between the layers of the superlattice is very small. As a consequence, quasi free-standing silicene is realized in this superlattice. In particular, the Dirac cone of silicene is preserved. Due to the wide band gap of hexagonal boron nitride, the superlattice realizes the characteristic physical phenomena of free-standing silicene. In particular, we address by model calculations the combined effect of the intrinsic spin-orbit coupling and an external electric field, which induces a transition from a semimetal to a topological insulator and further to a band insulator.
Piezoelectricity in the dielectric component of nanoscale dielectric-ferroelectric superlattices.
Jo, Ji Young; Sichel, Rebecca J; Lee, Ho Nyung; Nakhmanson, Serge M; Dufresne, Eric M; Evans, Paul G
2010-05-21
The origin of the functional properties of complex oxide superlattices can be resolved using time-resolved synchrotron x-ray diffraction into contributions from the component layers making up the repeating unit. The CaTiO3 layers of a CaTiO3/BaTiO3 superlattice have a piezoelectric response to an applied electric field, consistent with a large continuous polarization throughout the superlattice. The overall piezoelectric coefficient at large strains, 54 pm/V, agrees with first-principles predictions in which a tetragonal symmetry is imposed on the superlattice by the SrTiO3 substrate.
Binding of biexcitons in GaAs/AlxGa1-xAs superlattices
DEFF Research Database (Denmark)
Mizeikis, Vygantas; Birkedal, Dan; Langbein, Wolfgang Werner
1997-01-01
Properties of the heavy-hole excitons and biexcitons in GaAs/Al0.3Ga0.7As superlattices are studied using linear and nonlinear optical techniques. In superlattices with miniband halfwidths less than the exciton binding energy, the biexciton binding energy is found to be the same as in the noninte......Properties of the heavy-hole excitons and biexcitons in GaAs/Al0.3Ga0.7As superlattices are studied using linear and nonlinear optical techniques. In superlattices with miniband halfwidths less than the exciton binding energy, the biexciton binding energy is found to be the same...
Dependence of Fe/Cr superlattice magnetoresistance on orientation of external magnetic field
International Nuclear Information System (INIS)
Ustinov, V.V.; Romashev, L.N.; Minin, V.I.; Semerikov, A.V.; Del', A.R.
1995-01-01
The paper presents the results of investigations into giant magnetoresistance of [Fe/Cr] 30 /MgO superlattices obtained using molecular-beam epitaxy under various orientations of magnetic field relatively to the layers of superlattice and to the direction of current flow. Theory of orientation dependence of superlattice magnetoresistance enabling to describe satisfactorily behaviour of magnetoresistance at arbitrary direction of magnetic field on the ground of results of magnetoresistance measurements in magnetic field parallel and perpendicular to plane of layers, is elaborated. It is pointed out that it is possible to obtain field dependence of superlattice magnetization on the ground of measurement results. 9 refs., 6 figs
Quasiperiodic AlGaAs superlattices for neuromorphic networks and nonlinear control systems
Energy Technology Data Exchange (ETDEWEB)
Malyshev, K. V., E-mail: malyshev@bmstu.ru [Electronics and Laser Technology Department, Bauman Moscow State Technical University, Moscow 105005 (Russian Federation)
2015-01-28
The application of quasiperiodic AlGaAs superlattices as a nonlinear element of the FitzHugh–Nagumo neuromorphic network is proposed and theoretically investigated on the example of Fibonacci and figurate superlattices. The sequences of symbols for the figurate superlattices were produced by decomposition of the Fibonacci superlattices' symbolic sequences. A length of each segment of the decomposition was equal to the corresponding figurate number. It is shown that a nonlinear network based upon Fibonacci and figurate superlattices provides better parallel filtration of a half-tone picture; then, a network based upon traditional diodes which have cubic voltage-current characteristics. It was found that the figurate superlattice F{sup 0}{sub 11}(1) as a nonlinear network's element provides the filtration error almost twice less than the conventional “cubic” diode. These advantages are explained by a wavelike shape of the decreasing part of the quasiperiodic superlattice's voltage-current characteristic, which leads to multistability of the network's cell. This multistability promises new interesting nonlinear dynamical phenomena. A variety of wavy forms of voltage-current characteristics opens up new interesting possibilities for quasiperiodic superlattices and especially for figurate superlattices in many areas—from nervous system modeling to nonlinear control systems development.
Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices
Directory of Open Access Journals (Sweden)
James (Zi-Jian Ju
2016-04-01
Full Text Available The thermoelectric properties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices (SL grown by molecular beam epitaxy are investigated. Room-temperature measurements of the thermoelectric properties reveal that an increasing Ga-content in ternary InGaN alloys (0 < x(Ga < 0.2 yields a more than 10-fold reduction in thermal conductivity (κ without deteriorating electrical conductivity (σ, while the Seebeck coefficient (S increases slightly due to a widening band gap compared to binary InN. Employing InN/InGaN SLs (x(Ga = 0.1 with different periods, we demonstrate that confinement effects strongly enhance electron mobility with values as high as ∼820 cm2/V s at an electron density ne of ∼5×1019 cm−3, leading to an exceptionally high σ of ∼5400 (Ωcm−1. Simultaneously, in very short-period SL structures S becomes decoupled from ne, κ is further reduced below the alloy limit (κ < 9 W/m-K, and the power factor increases to 2.5×10−4 W/m-K2 by more than a factor of 5 as compared to In-rich InGaN alloys. These findings demonstrate that quantum confinement in group-III nitride-based superlattices facilitates improvements of thermoelectric properties over bulk-like ternary nitride alloys.
Energy Technology Data Exchange (ETDEWEB)
Margueron, Samuel [Laboratoire Matériaux Optiques, Photonique et Systèmes, Université de Lorraine et CentraleSupélec, 57070 Metz (France); John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Maryland 02138 (United States); Pokorny, Jan; Skiadopoulou, Stella; Kamba, Stanislav [Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8 (Czech Republic); Liang, Xin [School of Materials Science and Engineering, Changzhou University, Changzhou, Jiangsu Province 213164 (China); Clarke, David R. [John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Maryland 02138 (United States)
2016-05-21
A thermodynamically stable series of superlattices, (ZnO){sub k}In{sub 2}O{sub 3}, form in the ZnO-In{sub 2}O{sub 3} binary oxide system for InO{sub 1.5} concentrations from about 13 up to about 33 mole percent (m/o). These natural superlattices, which consist of a periodic stacking of single, two-dimensional sheets of InO{sub 6} octahedra, are found to give rise to systematic changes in the optical and vibrational properties of the superlattices. Low-frequency Raman scattering provides the evidence for the activation of acoustic phonons due to the folding of Brillouin zone. New vibrational modes at 520 and 620 cm{sup −1}, not present in either ZnO or In{sub 2}O{sub 3}, become Raman active. These new modes are attributed to collective plasmon oscillations localized at the two-dimensional InO{sub 1.5} sheets. Infrared reflectivity experiments, and simulations taking into account a negative dielectric susceptibility due to electron carriers in ZnO and interface modes of the dielectric layer of InO{sub 2}, explain the occurrence of these new modes. We postulate that a localized electron gas forms at the ZnO/InO{sub 2} interface due to the electron band alignment and polarization effects. All our observations suggest that there are quantum contributions to the thermal and electrical conductivity in these natural superlattices.
6. QUANTUM COMPUTING: Unpaired Majorana fermions in quantum wires
Kitaev, A. Yu
2001-10-01
Certain one-dimensional Fermi systems have an energy gap in the bulk spectrum while boundary states are described by one Majorana operator per boundary point. A finite system of length L possesses two ground states with an energy difference proportional to exp(-L/l0) and different fermionic parities. Such systems can be used as qubits since they are intrinsically immune to decoherence. The property of a system to have boundary Majorana fermions is expressed as a condition on the bulk electron spectrum. The condition is satisfied in the presence of an arbitrary small energy gap induced by proximity of a three-dimensional p-wave superconductor, provided that the normal spectrum has an odd number of Fermi points in each half of the Brillouin zone (each spin component counts separately).
Fielding, Randall
2000-01-01
Presents a debate on which technology will be in tomorrow's classrooms and the pros and cons of wiring classrooms and using a wireless network. Concluding comments address the likelihood, and desirability, of placing computers throughout the entire educational process and what types of computers and capabilities are needed. (GR)
Panettieri, Joseph C.
2006-01-01
The wireless bandwagon is rolling across Mississippi, picking up a fresh load of converts and turning calamity into opportunity. Traditional wired school networks, many of which unraveled during Hurricane Katrina, are giving way to advanced wireless mesh networks that frequently include voice-over-IP (VoIP) capabilities. Vendor funding is helping…
DEFF Research Database (Denmark)
Jordi, Moréton; F, Escribano; J. L., Farias
This document is a general report on the implementation of gamification in 3D Wire 2015 event. As the second gamification experience in this event, we have delved deeply in the previous objectives (attracting public areas less frequented exhibition in previous years and enhance networking) and have...
International Nuclear Information System (INIS)
Bartl, W.; Neuhofer, G.; Regler, M.
1986-02-01
This booklet contains program and the abstracts of the papers presented at the conference, most of them dealing with performance testing of various types of wire chambers. The publication of proceedings is planned as a special issue of 'Nuclear instruments and methods' later on. All abstracts are in English. An author index for the book of abstracts is given. (A.N.)
Wire EDM for Refractory Materials
Zellars, G. R.; Harris, F. E.; Lowell, C. E.; Pollman, W. M.; Rys, V. J.; Wills, R. J.
1982-01-01
In an attempt to reduce fabrication time and costs, Wire Electrical Discharge Machine (Wire EDM) method was investigated as tool for fabricating matched blade roots and disk slots. Eight high-strength nickel-base superalloys were used. Computer-controlled Wire EDM technique provided high quality surfaces with excellent dimensional tolerances. Wire EDM method offers potential for substantial reductions in fabrication costs for "hard to machine" alloys and electrically conductive materials in specific high-precision applications.
Miller, Henry A
2013-01-01
Practical Wiring, Volume 1 is a 13-chapter book that first describes some of the common hand tools used in connection with sheathed wiring. Subsequent chapters discuss the safety in wiring, cables, conductor terminations, insulating sheathed wiring, conductor sizes, and consumer's control equipments. Other chapters center on socket outlets, plugs, lighting subcircuits, lighting accessories, bells, and primary and secondary cells. This book will be very valuable to students involved in this field of interest.
Wire chambers: Trends and alternatives
International Nuclear Information System (INIS)
Regler, Meinhard
1992-01-01
The subtitle of this year's Vienna Wire Chamber Conference - 'Recent Trends and Alternative Techniques' - signalled that it covered a wide range of science and technology. While an opening Vienna talk by wire chamber pioneer Georges Charpak many years ago began 'Les funerailles des chambres a fils (the burial of wire chambers)', the contrary feeling this year was that wire chambers are very much alive!
DEFF Research Database (Denmark)
Bradshaw, J.; Song, X.J.; Shealy, J.R.
1992-01-01
We report growth of (InAs)1(AlAs)1 and (InAs)2(AlAs)2 strained layer superlattices by migration enhanced epitaxy. The samples were grown on InP (001) substrates and characterized by Raman spectroscopy, x-ray diffraction, and transmission electron microscopy. Satellite peaks in the x-ray data...... confirm the intended periodicity and indicate the presence of some disorder in the monolayer sample. The energies of the zone folded and quantum confined optic phonons are in reasonable agreement with calculations based on one-dimensional elastic continuum and linear chain models. Journal of Applied...
Zory, Jr, Peter S; Kelley, Paul
1993-01-01
This book provides the information necessary for the reader to achieve a thorough understanding of all aspects of QW lasers - from the basic mechanism of optical gain, through the current technolgoical state of the art, to the future technologies of quantum wires and quantum dots. In view of the growing importance of QW lasers, this book should be read by all those with an active interest in laser science and technology, from the advanced student to the experienced laser scientist.* The first comprehensive book-length treatment of quantum well lasers* Provides a detailed treatment
Tunneling time and Hartman effect in a ferromagnetic graphene superlattice
Directory of Open Access Journals (Sweden)
Farhad Sattari
2012-03-01
Full Text Available Using transfer-matrix and stationary phase methods, we study the tunneling time (group delay time in a ferromagnetic monolayer graphene superlattice. The system we peruse consists of a sequence of rectangular barriers and wells, which can be realized by putting a series of electronic gates on the top of ferromagnetic graphene. The magnetization in the two ferromagnetic layers is aligned parallel. We find out that the tunneling time for normal incident is independent of spin state of electron as well as the barrier height and electron Fermi energy while for the oblique incident angles the tunneling time depends on the spin state of electron and has an oscillatory behavior. Also the effect of barrier width on tunneling time is also investigated and shown that, for normal incident, the Hartman effect disappears in a ferromagnetic graphene superlattice but it appears for oblique incident angles when the x component of the electron wave vector in the barrier is imaginary.
Photoacoustic transformation of Bessel light beams in magnetoactive superlattices
Energy Technology Data Exchange (ETDEWEB)
Mityurich, G. S., E-mail: George-mityurich@mail.ru [Belarusian Trade and Economics University of Consumer Cooperatives (Belarus); Chernenok, E. V.; Sviridova, V. V.; Serdyukov, A. N. [Gomel State University (Belarus)
2015-03-15
Photoacoustic transformation of the TE mode of a Bessel light beam (BLB) has been studied for piezoelectric detection in short-period superlattices formed by magnetoactive crystals of bismuth germanate (Bi{sub 12}GeO{sub 20}) and bismuth silicate (Bi{sub 12}SiO{sub 20}) types. It is shown that the resulting signal amplitude can be controlled using optical schemes of BLB formation with a tunable cone angle. A resonant increase in the signal amplitude has been found in the megahertz range of modulation frequencies and its dependences on the BLB modulation frequency, geometric sizes of the two-layer structure and piezoelectric transducer, radial coordinate of the polarization BLB mode, and dissipative superlattice parameters are analyzed.
Large negative differential resistance in graphene nanoribbon superlattices
Tseng, P.; Chen, C. H.; Hsu, S. A.; Hsueh, W. J.
2018-05-01
A graphene nanoribbon superlattice with a large negative differential resistance (NDR) is proposed. Our results show that the peak-to-valley ratio (PVR) of the graphene superlattices can reach 21 at room temperature with bias voltages between 90-220 mV, which is quite large compared with the one of traditional graphene-based devices. It is found that the NDR is strongly influenced by the thicknesses of the potential barrier. Therefore, the NDR effect can be optimized by designing a proper barrier thickness. The large NDR effect can be attributed to the splitting of the gap in transmission spectrum (segment of Wannier-Stark ladder) with larger thicknesses of barrier when the applied voltage increases.
Magnetism and superconductivity in neodymium/lanthanum superlattices
DEFF Research Database (Denmark)
Goff, J.P.; Sarthour, R.S.; McMorrow, Desmond Francis
1997-01-01
bilayers. Magnetization studies reveal the onset of superconductivity at a temperature comparable to bulk DHCP La, and the results suggest coupling across the antiferromagnetic Nd layers. The magnetic structures, investigated using neutron diffraction techniques, resemble those found in bulk Nd....... For the cubic sites of the DHCP structure the magnetic order is confined to individual Nd blocks. However, the magnetic order on the Nd hexagonal sites propagates coherently through the La, even when it becomes superconducting. (C) 1998 Elsevier Science B.V. All rights reserved.......A single-crystal Nd30La10 superlattice grown using molecular beam epitaxy is found to consist of alternating antiferromagnetic and superconducting layers at low temperature. The superlattice has the DHCP crystal structure, and the stacking sequence of close-packed planes is coherent over many...
Surface magnetic phase transitions in Dy/Lu superlattices
International Nuclear Information System (INIS)
Goff, J.P.; Sarthour, R.S.; Micheletti, C.; Langridge, S.; Wilkins, C.J.T.; Ward, R.C.C.; Wells, M.R.
1999-01-01
Dy/Lu superlattices comprising ferromagnetic Dy blocks coupled antiferromagnetically across the Lu blocks may be modelled as a chain of XY spins with antiferromagnetic exchange and six-fold anisotropy. We have calculated the stable magnetic phases for the cases of large anisotropy and a field applied along an easy direction. For an infinite chain an intermediate phase (1, 5,...) is predicted, where the notation gives the angle between the moment and the applied field in units of π/3. Furthermore, the effects of surface reconstruction are determined for finite chains. A [Dy 20 Lu 12 ] 20 superlattice has been studied using bulk magnetization and polarized neutron reflectivity. The (1, 5,...) phase has been identified and the results provide direct evidence in support of the theoretical predictions. Dipolar forces are shown to account for the magnitude of the observed exchange coupling. (Copyright (c) 1999 Elsevier Science B.V., Amsterdam. All rights reserved.)
) m /SrVO3 ( m = 5, 6) Superlattices
Dai, Qingqing
2018-05-04
The (LaV3+O3)m/SrV4+O3 (m = 5, 6) superlattices are investigated by first principles calculations. While bulk LaVO3 is a C‐type antiferromagnetic semiconductor and bulk SrVO3 is a paramagnetic metal, semiconducting A‐type antiferromagnetic states for both superlattices are found due to epitaxial strain. At the interfaces, however, the V spins couple antiferromagnetically for m = 5 and ferromagnetically for m = 6 (m‐dependence of the magnetization). Electronic reconstruction in form of charge ordering is predicted to occur with V3+ and V4+ states arranged in a checkerboard pattern on both sides of the SrO layer. As compared to bulk LaVO3, the presence of V4+ ions introduces in‐gap states that strongly reduce the bandgap and influence the orbital occupation and ordering.
Electronic structure of a graphene superlattice with massive Dirac fermions
International Nuclear Information System (INIS)
Lima, Jonas R. F.
2015-01-01
We study the electronic and transport properties of a graphene-based superlattice theoretically by using an effective Dirac equation. The superlattice consists of a periodic potential applied on a single-layer graphene deposited on a substrate that opens an energy gap of 2Δ in its electronic structure. We find that extra Dirac points appear in the electronic band structure under certain conditions, so it is possible to close the gap between the conduction and valence minibands. We show that the energy gap E g can be tuned in the range 0 ≤ E g ≤ 2Δ by changing the periodic potential. We analyze the low energy electronic structure around the contact points and find that the effective Fermi velocity in very anisotropic and depends on the energy gap. We show that the extra Dirac points obtained here behave differently compared to previously studied systems
Transport and spin effects in homogeneous magnetic superlattice
International Nuclear Information System (INIS)
Cardoso, J.L.; Pereyra, P.; Anzaldo-Meneses, A.
2000-09-01
Homogeneous semiconductors under spacially periodic external magnetic fields exhibit spin-band splitting and displacements, more clearly defined than in diluted magnetic semiconductor superlattices. We study the influence of the geometrical parameters and the spin-field interaction on the electronic transport properties. We show that by varying the external magnetic field, one can easily block the transmission of either the spin-up or the spin-down electrons. (author)
Capacitance-Voltage (CV) Measurement of Type-2 Superlattice Photodiodes
2016-01-05
Department of Defense position, policy, or decision. CQD Contents 1. Background and Motivation ...1. Background and Motivation 1.1. Development of Type-II superalttice Type-II InAs/GaSb superlattices (T2SLs) were first proposed by Sai-Halasz et...equals the ionized impurity concentration. In such case, the semiconductor is under extrinsic regime, and the dynamic of mobile carriers depends on
Structural study of multilayered vanadium/nickel superlattices
International Nuclear Information System (INIS)
Homma, H.; Lepetre, Y.; Murduck, J.M.; Schuller, I.K.; Majkrzak, C.F.
1985-07-01
We have studied the microstructure of V/Ni metallic superlattice, using x-ray and neutron diffraction. We find a sharp and broad rocking curves around the first-order Bragg peak, and attribute them to a columnar structure which gives rise to two modulation structures; one the ordinary layered structure within the columns and the other the averaged modulation structure which produces the sharp rocking peak
Phase transitions of a spin-one Ising ferromagnetic superlattice
International Nuclear Information System (INIS)
Saber, A.
2001-09-01
Using the effective field theory with a probability distribution technique, the magnetic properties in an infinite superlattice consisting of two different ferromagnets are studied in a spin-one Ising model. The dependence of the Curie temperatures are calculated as a function of two slabs in one period and as a function of the intra- and interlayer exchange interactions. A critical value of the exchange reduced interaction above which the interface magnetism appears is found. (author)
Band structure of ABC-trilayer graphene superlattice
International Nuclear Information System (INIS)
Uddin, Salah; Chan, K. S.
2014-01-01
We investigate the effect of one-dimensional periodic potentials on the low energy band structure of ABC trilayer graphene first by assuming that all the three layers have the same potential. Extra Dirac points having the same electron hole crossing energy as that of the original Dirac point are generated by superlattice potentials with equal well and barrier widths. When the potential height is increased, the numbers of extra Dirac points are increased. The dispersions around the Dirac points are not isotropic. It is noted that the dispersion along the k y direction for k x = 0 oscillates between a non-linear dispersion and a linear dispersion when the potential height is increased. When the well and barrier widths are not identical, the symmetry of the conduction and valence bands is broken. The extra Dirac points are shifted either upward or downward depending on the barrier and well widths from the zero energy, while the position of the central Dirac point oscillates with the superlattice potential height. By considering different potentials for different layers, extra Dirac points are generated not from the original Dirac points but from the valleys formed in the energy spectrum. Two extra Dirac points appear from each pair of touched valleys, so four Dirac points appeared in the spectrum at particular barrier height. By increasing the barrier height of superlattice potential two Dirac points merge into the original Dirac point. This emerging and merging of extra Dirac points is different from the equal potential case
Shape-Anisotropy Driven Symmetry Transformations in Nanocrystal Superlattice Polymorphs
Bian, Kaifu; Choi, Joshua J.; Kaushik, Ananth; Clancy, Paulette; Smilgies, Detlef-M.; Hanrath, Tobias
2011-01-01
Despite intense research efforts by research groups worldwide, the potential of self-assembled nanocrystal superlattices (NCSLs) has not been realized due to an incomplete understanding of the fundamental molecular interactions governing the self-assembly process. Because NCSLs reside naturally at length-scales between atomic crystals and colloidal assemblies, synthetic control over the properties of constituent nanocrystal (NC) building blocks and their coupling in ordered assemblies is expected to yield a new class of materials with remarkable optical, electronic, and vibrational characteristics. Progress toward the formation of suitable test structures and subsequent development of NCSL-based technologies has been held back by the limited control over superlattice spacing and symmetry. Here we show that NCSL symmetry can be controlled by manipulating molecular interactions between ligands bound to the NC surface and the surrounding solvent. Specifically, we demonstrate solvent vapor-mediated NCSL symmetry transformations that are driven by the orientational ordering of NCs within the lattice. The assembly of various superlattice polymorphs, including face-centered cubic (fcc), body-centered cubic (bcc), and body-centered tetragonal (bct) structures, is studied in real time using in situ grazing incidence small-angle X-ray scattering (GISAXS) under controlled solvent vapor exposure. This approach provides quantitative insights into the molecular level physics that controls solvent-ligand interactions and assembly of NCSLs. Computer simulations based on all-atom molecular dynamics techniques confirm several key insights gained from experiment. © 2011 American Chemical Society.
X-ray diffraction of multilayers and superlattices
International Nuclear Information System (INIS)
Bartels, W.J.; Hornstra, J.; Lobeek, D.J.W.
1986-01-01
Recursion formulae for calculating the reflected amplitude ratio of multilayers and superlattices have been derived from the Takagi-Taupin differential equations, which describe the dynamical diffraction of X-rays in deformed crystals. Calculated rocking curves of complicated layered structures, such as non-ideal superlattices on perfect crystals, are shown to be in good agreement with observed diffraction profiles. The kinematical theory can save computing time only in the case of an ideal superlattice, for which a geometric series can be used, but the reflections must be below 10% so that multiple reflections can be neglected. For a perfect crystal of arbitrary thickness the absorption at the center of the dynamical reflection is found to be proportional to the square root of the reflectivity. Sputter-deposited periodic multilayers of tungsten and carbon can be considered as an artificial crystal, for which dynamical X-ray diffraction calculations give results very similar to those of a macroscopic optical description in terms of the complex index of refraction and Fresnel reflection coefficients. (orig.)
Thermoelectric properties of strontium titanate superlattices incorporating niobium oxide nanolayers
Sarath Kumar, S. R.; Hedhili, Mohamed N.; Cha, Dong Kyu; Tritt, Terry M.; Alshareef, Husam N.
2014-01-01
A novel superlattice structure based on epitaxial nanoscale layers of NbOx and Nb-doped SrTiO3 is fabricated using a layer-by-layer approach on lattice matched LAO substrates. The absolute Seebeck coefficient and electrical conductivity of the [(NbOx) a/(Nb-doped SrTiO3)b]20 superlattices (SLs) were found to increase with decreasing layer thickness ratio (a/b ratio), reaching, at high temperatures, a power factor that is comparable to epitaxial Nb-doped SrTiO3 (STNO) films (∼0.7 W m-1 K-1). High temperature studies reveal that the SLs behave as n-type semiconductors and undergo an irreversible change at a varying crossover temperature that depends on the a/b ratio. By use of high resolution X-ray photoelectron spectroscopy and X-ray diffraction, the irreversible changes are identified to be due to a phase transformation from cubic NbO to orthorhombic Nb2O5, which limits the highest temperature of stable operation of the superlattice to 950 K. © 2014 American Chemical Society.
Waves in man-made materials: superlattice to metamaterials
Tsu, Raphael; Fiddy, Michael A.
2014-07-01
While artificial or man-made structures date back to Lord Rayleigh, the work started by Lewin in 1947, placing spheres onto cubic lattices, greatly enriched microwave materials and devices. It was very suggestive of both metamaterials and photonics crystals. Effective medium models were used to describe bulk properties with some success. The concept of metamaterials followed photonic crystals, and these both were introduced after the introduction of the man-made superlattices designed to enrich the class of materials for electronic devices. The work on serrated ridged waveguides by Kirschbaum and Tsu for the control of the refractive index of microwave lenses as well as microwave matching devices in 1959 used a combination of theory, such as Floquet's theory, Bloch theory in one dimension, as well as periodic lumped loading. There is much in common between metamaterials and superlattices, but in this paper, we discuss some practical limitations to both. It is pointed out that unlike superlattices where kl > 1 is the most important criterion, metamaterials try to avoid involve such restrictions. However, the natural random fluctuations that limit the properties of naturally occurring materials are shown to take a toll on the theoretical predictions of metamaterials. The question is how great that toll, i.e. how significant those fluctuations will be, in diminishing the unusual properties that metamaterials can exhibit.
pi-phase magnetism in ferromagnetic-superconductor superlattices
Khusainov, M G; Proshin, Y N
2001-01-01
The Larkin-Ovchinnikov-Fylde-Ferrel new 0 pi- and pi pi-states are forecasted for the ferromagnetic metal/superconductor superlattices with antiferromagnetic magnetization orientation in the neighbouring layers. The above-mentioned states are characterized under certain conditions by higher critical temperature T sub c as compared to the earlier known LOFF 00- and pi 0-states with the FM-layers ferromagnetic ordering. It is shown that the nonmonotonous behavior of the T sub c of the FM/S superlattices by the thickness of the S-layers lower than the d sub s suppi value is connected with the cascades of the 0 pi-pi pi-0 pi phase transitions. The character of the T sub c oscillations by the d sub s > d sub s suppi is related to the 00-pi 0-00 transitions. The logical elements of the new type, combining the advantages of the superconducting and magnetic information recording in one sample are proposed on the basis of the FM/S superlattices
Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design
Hoffman, Jason D.; Wu, Stephen M.; Kirby, Brian J.; Bhattacharya, Anand
2018-04-01
Antiferromagnets (AFMs) have recently gathered a large amount of attention as a potential replacement for ferromagnets (FMs) in spintronic devices due to their lack of stray magnetic fields, invisibility to external magnetic probes, and faster magnetization dynamics. Their development into a practical technology, however, has been hampered by the small number of materials where the antiferromagnetic state can be both controlled and read out. We show that by relaxing the strict criterion on pure antiferromagnetism, we can engineer an alternative class of magnetic materials that overcome these limitations. This is accomplished by stabilizing a noncollinear magnetic phase in LaNiO3 /La2 /3Sr1 /3MnO3 superlattices. This state can be continuously tuned between AFM and FM coupling through varying the superlattice spacing, strain, applied magnetic field, or temperature. By using this alternative "knob" to tune magnetic ordering, we take a nanoscale materials-by-design approach to engineering ferromagneticlike controllability into antiferromagnetic synthetic magnetic structures. This approach can be used to trade-off between the favorable and unfavorable properties of FMs and AFMs when designing realistic resistive antiferromagnetic memories. We demonstrate a memory device in one such superlattice, where the magnetic state of the noncollinear antiferromagnet is reversibly switched between different orientations using a small magnetic field and read out in real time with anisotropic magnetoresistance measurements.
Shape-Anisotropy Driven Symmetry Transformations in Nanocrystal Superlattice Polymorphs
Bian, Kaifu
2011-04-26
Despite intense research efforts by research groups worldwide, the potential of self-assembled nanocrystal superlattices (NCSLs) has not been realized due to an incomplete understanding of the fundamental molecular interactions governing the self-assembly process. Because NCSLs reside naturally at length-scales between atomic crystals and colloidal assemblies, synthetic control over the properties of constituent nanocrystal (NC) building blocks and their coupling in ordered assemblies is expected to yield a new class of materials with remarkable optical, electronic, and vibrational characteristics. Progress toward the formation of suitable test structures and subsequent development of NCSL-based technologies has been held back by the limited control over superlattice spacing and symmetry. Here we show that NCSL symmetry can be controlled by manipulating molecular interactions between ligands bound to the NC surface and the surrounding solvent. Specifically, we demonstrate solvent vapor-mediated NCSL symmetry transformations that are driven by the orientational ordering of NCs within the lattice. The assembly of various superlattice polymorphs, including face-centered cubic (fcc), body-centered cubic (bcc), and body-centered tetragonal (bct) structures, is studied in real time using in situ grazing incidence small-angle X-ray scattering (GISAXS) under controlled solvent vapor exposure. This approach provides quantitative insights into the molecular level physics that controls solvent-ligand interactions and assembly of NCSLs. Computer simulations based on all-atom molecular dynamics techniques confirm several key insights gained from experiment. © 2011 American Chemical Society.
Interface disorder and transport properties in HTC/CMR superlattices
Energy Technology Data Exchange (ETDEWEB)
Haberkorn, N.; Guimpel, J.; Sirena, M.; Steren, L.B.; Campillo, G.; Saldarriaga, W.; Gomez, M.E
2004-08-01
The physical properties of superlattices are affected by interface disorder, like roughness and interdiffusion. X-ray diffraction allows its measurement through modeling and structure refinement. The high-T{sub c} RBa{sub 2}Cu{sub 3}O{sub 7} (RBCO) and colossal magnetoresistance La{sub x}A{sub 1-x}MnO{sub 3} (LAMO) perovskites are interesting superlattice partners given their similar lattice parameters and because the combination of magnetic and superconducting properties is interesting for both basic and applied research. We have investigated the structural and transport properties of YBCO/La{sub 2/3}Ca{sub 1/3}MnO{sub 3} and GdBCO/La{sub 0.6}Sr{sub 0.04}MnO{sub 3} superlattices grown by sputtering on (1 0 0)MgO. We find a roughness of 1 RBCO unit cell and a 30% interdiffusion in the same length from the interfaces for all samples. The superconducting behavior is found strongly dependent on the LAMO layer thickness.
Lateral surface superlattices in strained InGaAs layers
International Nuclear Information System (INIS)
Milton, B.
2000-08-01
Lateral Surface Superlattices were fabricated by etching in strained InGaAs layers above a GaAs/AlGaAs 2DEG channel. These were etched both by dry plasma wet chemical etching to produce periods of 100nm, 200nm and 300nm. These superlattices were fabricated on Hall bars to allow four terminal measurement and a blanket gate was placed on top, to allow variations in the carrier concentration. The magnetoresistance effects of these superlattices were studied at varying values of gate voltage, which varies the carrier concentration and the electrostatic periodic potential and at temperatures down to 45mK in a dilution refrigerator. From the oscillations observed in the magnetoresistance trace's it is possible to calculate the magnitude of the periodic potential. This showed that the etched, strained InGaAs was producing an anisotropic piezoelectric potential, along with an isotropic electrostatic potential. The variation in period allowed a study of the change of this piezoelectric potential with the period as well as a study of the interactions between the electrostatic and piezoelectric potentials. Further, at the lowest temperatures a strong interaction was observed between the Commensurability Oscillations, caused by the periodic potential, and the Shubnikov-de Haas Oscillations due to the Landau. Levels. This interaction was studied as it varied with temperature and carrier concentration. (author)
Manganite/Cuprate Superlattice as Artificial Reentrant Spin Glass
Ding, Junfeng
2016-05-04
Emerging physical phenomena at the unit-cell-controlled interfaces of transition-metal oxides have attracted lots of interest because of the rich physics and application opportunities. This work reports a reentrant spin glass behavior with strong magnetic memory effect discovered in oxide heterostructures composed of ultrathin manganite La0.7Sr0.3MnO3 (LSMO) and cuprate La2CuO4 (LCO) layers. These heterostructures are featured with enhanced ferromagnetism before entering the spin glass state: a Curie temperature of 246 K is observed in the superlattice with six-unit-cell LSMO layers, while the reference LSMO film with the same thickness shows much weaker magnetism. Furthermore, an insulator-metal transition emerges at the Curie temperature, and below the freezing temperature the superlattices can be considered as a glassy ferromagnetic insulator. These experimental results are closely related to the interfacial spin reconstruction revealed by the first-principles calculations, and the dependence of the reentrant spin glass behavior on the LSMO layer thickness is in line with the general phase diagram of a spin system derived from the infinite-range SK model. The results of this work underscore the manganite/cuprate superlattices as a versatile platform of creating artificial materials with tailored interfacial spin coupling and physical properties. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Thermoelectric properties of strontium titanate superlattices incorporating niobium oxide nanolayers
Sarath Kumar, S. R.
2014-04-22
A novel superlattice structure based on epitaxial nanoscale layers of NbOx and Nb-doped SrTiO3 is fabricated using a layer-by-layer approach on lattice matched LAO substrates. The absolute Seebeck coefficient and electrical conductivity of the [(NbOx) a/(Nb-doped SrTiO3)b]20 superlattices (SLs) were found to increase with decreasing layer thickness ratio (a/b ratio), reaching, at high temperatures, a power factor that is comparable to epitaxial Nb-doped SrTiO3 (STNO) films (∼0.7 W m-1 K-1). High temperature studies reveal that the SLs behave as n-type semiconductors and undergo an irreversible change at a varying crossover temperature that depends on the a/b ratio. By use of high resolution X-ray photoelectron spectroscopy and X-ray diffraction, the irreversible changes are identified to be due to a phase transformation from cubic NbO to orthorhombic Nb2O5, which limits the highest temperature of stable operation of the superlattice to 950 K. © 2014 American Chemical Society.
Modulating nanoparticle superlattice structure using proteins with tunable bond distributions
International Nuclear Information System (INIS)
McMillan, Janet R.; Brodin, Jeffrey D.; Millan, Jaime A.; Lee, Byeongdu; Olvera de la Cruz, Monica; Mirkin, Chad A.
2017-01-01
Here, we investigate the use of proteins with tunable DNA modification distributions to modulate nanoparticle superlattice structure. Using Beta-galactosidase (βgal) as a model system, we have employed the orthogonal chemical reactivities of surface amines and thiols to synthesize protein-DNA conjugates with 36 evenly distributed or 8 specifically positioned oligonucleotides. When assembled into crystalline superlattices with AuNPs, we find that the distribution of DNA modifications modulates the favored structure: βgal with uniformly distributed DNA bonding elements results in body-centered cubic crystals, whereas DNA functionalization of cysteines results in AB 2 packing. We probe the role of protein oligonucleotide number and conjugate size on this observation, which revealed the importance of oligonucleotide distribution and number in this observed assembly behavior. These results indicate that proteins with defined DNA-modification patterns are powerful tools to control the nanoparticle superlattices architecture, and establish the importance of oligonucleotide distribution in the assembly behavior of protein-DNA conjugates.
Phase locking of a 2.7 THz quantum cascade laser to a microwave reference
Khosropanah, P.; Baryshev, A.; Zhang, W.; Jellema, W.; Hovenier, J.N.; Gao, J.R.; Klapwijk, T.M.; Paveliev, D.G.; Williams, B.S.; Kumar, S.; Hu, Q.; Reno, J.L.; Klein, B.; Hesler, J.L.
2009-01-01
We demonstrate the phase locking of a 2.7 THz metal–metal waveguide quantum cascade laser (QCL) to an external microwave signal. The reference is the 15th harmonic, generated by a semiconductor superlattice nonlinear device, of a signal at 182 GHz, which itself is generated by a multiplier chain
Phase locking of a 2.7 THz quantum cascade laser to a microwave reference
Khosropanah, P.; Baryshev, A.; Zhang, W.; Jellema, W.; Hovenier, J. N.; Gao, J. R.; Klapwijk, T. M.; Paveliev, D. G.; Williams, B. S.; Kumar, S.; Hu, Q.; Reno, J. L.; Klein, B.; Hesler, J. L.
2009-01-01
We demonstrate the phase locking of a 2.7 THz metal-metal waveguide quantum cascade laser (QCL) to an external microwave signal. The reference is the 15th harmonic, generated by a semiconductor superlattice nonlinear device, of a signal at 182 GHz, which itself is generated by a multiplier chain
Ordered InAs/InP quantum dot arrays at telecom wavelength
Sritirawisarn, N.
2010-01-01
This dissertation demonstrates the growth and optical characterization of ordered InAs/InP quantum dot (QD) arrays grown by chemical-beam epitaxy (CBE). The creation of InAs/InP QD arrays is governed by self-organized anisotropic strain engineering of InAs/InGaAsP superlattice (SL) templates leading
Charge polarization effects and hole spectra characteristics in AlxGa1-xN/GaN superlattices
International Nuclear Information System (INIS)
Assaoui, Fatna; Pereyra, Pedro
2001-10-01
We study the effects of charge polarization on the extended physical properties of superlattices, such as transmission coefficients and valence band structure. We consider both linear and parabolic modulation of the band edge. Based on the theory of finite periodic systems (TFPS), analytic expressions and high precision calculations of the relevant physical quantities for n-cell systems are obtained. New and also well-known features of these systems are identified. Besides the well-known energy bandstructure, we also have the field bandstructure, with interesting characteristics. Wider field gaps at stronger internal electric fields and higher density of field bands for larger layer widths are some of these characteristics. Well defined level density asymmetries identify the minibands induced by charge polarization or the so-called Quantum Confining Stark Effect. We present the n-cell transmission amplitudes, transmission coefficients and miniband structures for different values of the relevant parameters. (author)
High-operating temperature MWIR photon detectors based on type II InAs/GaSb superlattice
Razeghi, Manijeh; Nguyen, Binh-Minh; Delaunay, Pierre-Yves; Abdollahi Pour, Siamak; Huang, Edward Kwei-wei; Manukar, Paritosh; Bogdanov, Simeon; Chen, Guanxi
2010-01-01
Recent efforts have been paid to elevate the operating temperature of Type II InAs/GaSb superlattice Mid Infrared photon detectors. Optimized growth parameters and interface engineering technique enable high quality material with a quantum efficiency above 50%. Intensive study on device architecture and doping profile has resulted in almost one order of magnitude of improvement to the electrical performance and lifted up the 300K-background BLIP operation temperature to 166K. At 77K, the ~4.2 μm cut-off devices exhibit a differential resistance area product in excess of the measurement system limit (106 Ohm.cm2) and a detectivity of 3x1013cm.Hz1/2/W. High quality focal plane arrays were demonstrated with a noise equivalent temperature of 10mK at 77K. Uncooled camera is capable to capture hot objects such as soldering iron.
Vienna Wire Chamber Conference
International Nuclear Information System (INIS)
Anon.
1983-01-01
After those of 1978 and 1980, a third Wire Chamber Conference was held from 15-18 February in the Technical University of Vienna. Eight invited speakers covered the field from sophisticated applications in biology and medicine, via software, to the state of the art of gaseous detectors. In some forty other talks the speakers tackled in more detail the topics of gaseous detectors, calorimetry and associated electronics and software
International Nuclear Information System (INIS)
Adeva, B.; Gomez, F.; Pazos, A.; Pfau, R.; Plo, M.; Rodriguez, J.M.; Vazquez, P.; Labbe, J.C.
1999-01-01
We present the performance of a new proportional gas detector. Its geometry consists of a cathode plane with 70x70 μm 2 apertures, crossed by 25 μm anode strips to which it is attached by 50 μm kapton spacers. In the region where the avalanche takes place, the anode strips are suspended in the gas mixture as in a standard wire chamber. This detector exhibits high rate capability and large gains, introducing very little material. (author)
Schuller, Ivan K.; Ketterson, John B.; Banerjee, Indrajit
1986-01-01
A superconducting tape or wire with an improved critical field is formed of alternating layers of a niobium-containing superconductor such as Nb, NbTi, Nb.sub.3 Sn or Nb.sub.3 Ge with a thickness in the range of about 0.5-1.5 times its coherence length, supported and separated by layers of copper with each copper layer having a thickness in the range of about 170-600 .ANG..
Energy Technology Data Exchange (ETDEWEB)
Gharibyan, V.; Delfs, A.; Koruptchenkov, I.; Noelle, D.; Tiessen, H.; Werner, M.; Wittenburg, K.
2012-11-15
A new type of 'two-in-one' wire scanner is proposed. Recent advances in linear motors' technology make it possible to combine translational and rotational movements. This will allow to scan the beam in two perpendicular directions using a single driving motor and a special fork attached to it. Vertical or horizontal mounting will help to escape problems associated with the 45 deg scanners. Test results of the translational part with linear motors is presented.
International Nuclear Information System (INIS)
Gharibyan, V.; Delfs, A.; Koruptchenkov, I.; Noelle, D.; Tiessen, H.; Werner, M.; Wittenburg, K.
2012-11-01
A new type of 'two-in-one' wire scanner is proposed. Recent advances in linear motors' technology make it possible to combine translational and rotational movements. This will allow to scan the beam in two perpendicular directions using a single driving motor and a special fork attached to it. Vertical or horizontal mounting will help to escape problems associated with the 45 deg scanners. Test results of the translational part with linear motors is presented.
International Nuclear Information System (INIS)
Va'vra, J.
1992-04-01
In this paper, we describe new developments in gas mixtures which have occurred during the last 3--4 years. In particular, we discuss new results on the measurement and modeling of electron drift parameters, the modeling of drift chamber resolution, measurements of primary ionization and the choice of gas for applications such as tracking, single electron detection, X-ray detection and visual imaging. In addition, new results are presented on photon feedback, breakdown and wire aging
Towards a wire-mediated coupling of trapped ions
Clark, Robert; Lee, Tony; Daniilidis, Nikos; Sankaranarayanan, S.; Häffner, Hartmut
2008-03-01
Most schemes for ion trap quantum computation rely upon the exchange of information between ion-qubits in the same trap region, mediated by their shared vibrational mode. An alternative way to achieve this coupling is via the image charges induced in a conducting wire that connects different traps. This was shown to be theoretically possible by Heinzen and Wineland in 1990, but some important practical questions have remained unaddressed. Among these are how the presence of such a wire modifies the motional frequencies and heating rates of trapped ions. We thus have realized this system as a 1 mm-scale planar segmented rf ion trap combined with an electrically floating gold wire of 25 microns diameter and length 1 cm. This wire is placed close to trapped ions using a set of piezoelectric nanopositioners. We present here experimental measurements of the motional frequencies and heating rates of a single trapped calcium ion as the wire is moved from 3.0 mm to 0.2 mm away from the ion. We discuss the implications of these results for achieving wire-mediated coupling in the present apparatus, as well as in future improved setups.
Band structure and optical properties of sinusoidal superlattices: ZnSe1-xTex
International Nuclear Information System (INIS)
Yang, G.; Lee, S.; Furdyna, J. K.
2000-01-01
This paper examines the band structure and optical selection rules in superlattices with a sinusoidal potential profile. The analysis is motivated by the recent successful fabrication of high quality ZnSe 1-x Te x superlattices in which the composition x varies sinusoidally along the growth direction. Although the band alignment in the ZnSe 1-x Te x sinusoidal superlattices is staggered (type II), they exhibit unexpectedly strong photoluminescence, thus suggesting interesting optical behavior. The band structure of such sinusoidal superlattices is formulated in terms of the nearly-free-electron (NFE) approximation, in which the superlattice potential is treated as a perturbation. The resulting band structure is unique, characterized by a single minigap separating two wide, free-electron-like subbands for both electrons and holes. Interband selection rules are derived for optical transitions involving conduction and valence-band states at the superlattice Brillouin-zone center, and at the zone edge. A number of transitions are predicted due to wave-function mixing of different subband states. It should be noted that the zone-center and zone-edge transitions are especially easy to distinguish in these superlattices because of the large width of the respective subbands. The results of the NFE approximation are shown to hold surprisingly well over a wide range of parameters, particularly when the period of the superlattice is short. (c) 2000 The American Physical Society
Thermoelectric efficiency of IV-VI multiple quantumwell and superlattice systems
International Nuclear Information System (INIS)
Beyer, H.
2001-09-01
In this thesis the thermoelectric properties of PbTe-based multiple quantum well (MQW) and superlattice (SL) structures grown by molecular beam epitaxy (MBE) are investigated. The two approaches for an enhancement of the dimensionless thermoelectric figure of merit ZT = σS 2 T/λ (σ: electric conductivity, S: Seebeck coefficient, λ: thermal conductivity, T: temperature) in low dimensional structures are discussed: an enhancement of the two dimensional (2D) power factor σS 2 2D due to carrier confinement or a reduction of the thermal conductivity due to a modified phonon dispersion and stronger phonon scattering in layered structures. The novel PbTe/Pb 1-x Sr x Te-MQW system is investigated for a rise of the 2D power factor σS 2 2D . A detailed analysis of optical and electronic parameters based on infrared transmission spectra is performed. Only a small rise of the 2D power factor σS 2 2D for the MQW's compared to homogeneous epitaxial PbTe-layers is found. This smaller σS 2 2D -rise compared to first predictions for ideal MQW's is related to the finite barrier height and effects like lifting of the valley degeneracy or enhanced carrier scattering. However, a strong reduction of the thermal conductivity is found in MQW structures resulting in 2D ZT values between 0.5 and 1.0 at T = 300 K and up to 1.6 at T = 550 K. For the use in technical applications the three dimensional (3D) figure of merit of the whole structure ZT 3D must be raised. Different novel PbTe-based superlattice structures are investigated with respect to a 3D ZT-increase due to thermal conductivity reduction. ZT 3D -values of 0.33 for p-type PbTe-doping superlattices and of 0.45 at T = 300 K for PbTe/PbSe 20 Te 80 -SL's are determined (T = 300 K; n-PbTe: ZT max = 0.36, p-PbTe: ZT max = 0.30). Maximum ZT-values up to 1.25 for PbTe/PbSe 20 Te 80 -SL's and 1.20 for PbTe-doping SL's are estimated for temperatures between 450 K and 550 K. These values show the potential of these structures for
Wire Array Solar Cells: Fabrication and Photoelectrochemical Studies
Spurgeon, Joshua Michael
/polymer composite films showed that their energy-conversion properties were comparable to those of an array attached to the growth substrate. High quantum efficiencies were observed relative to the packing density of the wires, particularly with illumination at high angles of incidence. The results indicate that an inexpensive, solid-state Si wire array solar cell is possible, and a plan is presented to develop one.
International Nuclear Information System (INIS)
Wang, C.; Wang, F.; Cao, J. C.
2014-01-01
Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation
Wang, C; Wang, F; Cao, J C
2014-09-01
Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation.
Energy Technology Data Exchange (ETDEWEB)
Wang, C., E-mail: cwang@mail.sim.ac.cn; Wang, F.; Cao, J. C., E-mail: jccao@mail.sim.ac.cn [Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China)
2014-09-01
Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation.
International Nuclear Information System (INIS)
Arana, J I; Bonilla, L L; Grahn, H T
2011-01-01
Undoped and strongly photoexcited semiconductor superlattices with field-dependent recombination behave as excitable or oscillatory media with spatially discrete nonlinear convection and diffusion. Infinitely long, dc-current-biased superlattices behaving as excitable media exhibit wave fronts with increasing or decreasing profiles, whose velocities can be calculated by means of asymptotic methods. These superlattices can also support pulses of the electric field. Pulses moving downstream with the flux of electrons can be constructed from their component wave fronts, whereas pulses advancing upstream do so slowly and experience saltatory motion: they change slowly in long intervals of time separated by fast transitions during which the pulses jump to the previous superlattice period. Photoexcited superlattices can also behave as oscillatory media and exhibit wave trains. (paper)
Dual wire welding torch and method
Diez, Fernando Martinez; Stump, Kevin S.; Ludewig, Howard W.; Kilty, Alan L.; Robinson, Matthew M.; Egland, Keith M.
2009-04-28
A welding torch includes a nozzle with a first welding wire guide configured to orient a first welding wire in a first welding wire orientation, and a second welding wire guide configured to orient a second welding wire in a second welding wire orientation that is non-coplanar and divergent with respect to the first welding wire orientation. A method of welding includes moving a welding torch with respect to a workpiece joint to be welded. During moving the welding torch, a first welding wire is fed through a first welding wire guide defining a first welding wire orientation and a second welding wire is fed through a second welding wire guide defining a second welding wire orientation that is divergent and non-coplanar with respect to the first welding wire orientation.
Cold atoms in microscopic traps: from wires to chips
International Nuclear Information System (INIS)
Cassettari, D.
2000-05-01
This thesis reports on the experimental demonstration of magnetic guides, traps and beam splitters for neutral atoms using current carrying wires. A straight wire allows to create two basic guide configurations: the magnetic field generated by the wire alone produces a guide where atoms in a strong field seeking state perform orbits around the wire (Kepler guide); by adding an external magnetic field, atoms in a weak field seeking state are guided at the location where the external field and the field generated by the wire cancel out (side guide). Furthermore, bending the wire in various shapes allows to modify the side guide potential and hence to create a large variety of three dimensional traps. A relevant property of these potentials is that higher trapping gradients are obtained by decreasing the current flowing in the wires. As the trap is compressed, it also moves closer to the wire. This feature has allowed us to create microscopic potentials by using thin wires designed on a surface (atom chip) by means of high resolution microfabrication techniques. Wires mounted on a surface have the advantage of being more robust and able to sustain larger currents due to their thermal coupling with the substrate. In our experiment we have developed methods to load these traps and guides with laser cooled atoms. Our first investigations have been performed with free standing wires which we have used to study the Kepler guide, the side guide and a three dimensional Ioffe-Pritchard trap. In the latter we have achieved the trapping parameters required in the experiments with Bose-Einstein condensates with much reduced power consumption. In a second time we have replaced the free standing wires with an atom chip, which we have used to compress the atomic cloud in potentials with trap frequencies above 100 kHz and ground state sizes below 100 nm. Such potentials are especially interesting for quantum information proposals of performing quantum gate operations with controlled
Right wire in orthodontics: a review
Ali, Hashim
2015-01-01
Quality of orthodontic wire such as stiffness, hardness, resiliency, elasticity and working range are important determinants of the effectivenes of tooth movement. Commonly used types of orthodontic arch wire:1) stainless steel(ss) wire, 2) conventional nickel- titanium (NiTi)alloy wire,3) improved super elastic NiTi- alloy wire( also called low hysteresis(LH)wire), and titanium molybdenum alloy(TMA) wire.
Efficient Quantum Information Transfer Through a Uniform Channel
Directory of Open Access Journals (Sweden)
Paola Verrucchi
2011-06-01
Full Text Available Effective quantum-state and entanglement transfer can be obtained by inducing a coherent dynamics in quantum wires with homogeneous intrawire interactions. This goal is accomplished by optimally tuning the coupling between the wire endpoints and the two qubits there attached. A general procedure to determine such value is devised, and scaling laws between the optimal coupling and the length of the wire are found. The procedure is implemented in the case of a wire consisting of a spin-1/2 XY chain: results for the time dependence of the quantities which characterize quantum-state and entanglement transfer are found of extremely good quality also for very long wires. The present approach does not require engineered intrawire interactions nor a specific initial pulse shaping, and can be applied to a vast class of quantum channels.
Photoabsorption modulation in GaAs: Ga1-xInx as strained-layer superlattices
International Nuclear Information System (INIS)
Sella, I.; Watkins, D.E.; Laurich, B.K.; Smith, D.L.; Subbanna, S.; Kroemer, H.
1990-01-01
Photoabsorption modulation measurements have been made on Ga 1 -x In x As -- GaAs strained-layer superlattices using two approaches: In the first the modulating beam and the test beam have the same wavelength (near the exciton resonance). In the second, the modulation wavelength is much shorter than the test beam wavelength. A dramatic difference is observed in the modulated transmission spectra near the excitonic level for the two modulating wavelengths. The difference in behavior can be explained by screening of the residual surface electric field, which only occurs for the high photon energy modulating beam. This beam excites carriers that are free to drift in the surface field before they are captured in the quantum wells. Carriers excited by the low photon energy modulation beam are created in the wells and can not effectively screen the surface field. We describe a model which explains the nonlinear intensity saturation profile and qualitatively describes the spectral line shape. 4 refs., 4 figs
Janjua, Bilal
2014-12-01
We have studied enhanced carrier injection by having an electron blocking layer (EBL) based on a graded superlattice (SL) design. Here, we examine, using a selfconsistent 6 × 6 k.p method, the energy band alignment diagrams under equilibrium and forward bias conditions while also considering carrier distribution and recombination rates (Shockley-Read-Hall, Auger, and radiative recombination rates). The graded SL is based on AlxGa1-xN (larger bandgap) Al0:5Ga0:5N (smaller bandgap) SL, where x is changed from 0.8 to 0.56 in steps of 0.06. Graded SL was found to be effective in reducing electron leakage and enhancing hole injection into the active region. Due to our band engineering scheme for EBL, four orders-of-magnitude enhancement were observed in the direct recombination rate, as compared with the conventional bulk EBL consisting of Al0:8Ga0:2N. An increase in the spatial overlap of carrier wavefunction was obtained due to polarization-induced band bending in the active region. An efficient single quantum-well ultraviolet-B light-emitting diode was designed, which emits at 280 nm. This is the effective wavelength for water disinfection application, among others.
Qiao, Peng-Fei; Mou, Shin; Chuang, Shun Lien
2012-01-30
The electronic band structures and optical properties of type-II superlattice (T2SL) photodetectors in the mid-infrared (IR) range are investigated. We formulate a rigorous band structure model using the 8-band k · p method to include the conduction and valence band mixing. After solving the 8 × 8 Hamiltonian and deriving explicitly the new momentum matrix elements in terms of envelope functions, optical transition rates are obtained through the Fermi's golden rule under various doping and injection conditions. Optical measurements on T2SL photodetectors are compared with our model and show good agreement. Our modeling results of quantum structures connect directly to the device-level design and simulation. The predicted doping effect is readily applicable to the optimization of photodetectors. We further include interfacial (IF) layers to study the significance of their effect. Optical properties of T2SLs are expected to have a large tunable range by controlling the thickness and material composition of the IF layers. Our model provides an efficient tool for the designs of novel photodetectors.
Hoppler, J; Stahn, J; Niedermayer, Ch; Malik, V K; Bouyanfif, H; Drew, A J; Rössle, M; Buzdin, A; Cristiani, G; Habermeier, H-U; Keimer, B; Bernhard, C
2009-04-01
Artificial multilayers offer unique opportunities for combining materials with antagonistic orders such as superconductivity and ferromagnetism and thus to realize novel quantum states. In particular, oxide multilayers enable the utilization of the high superconducting transition temperature of the cuprates and the versatile magnetic properties of the colossal-magnetoresistance manganites. However, apart from exploratory work, the in-depth investigation of their unusual properties has only just begun. Here we present neutron reflectometry measurements of a [Y(0.6)Pr(0.4)Ba(2)Cu(3)O(7) (10 nm)/La(2/3)Ca(1/3)MnO(3) (10 nm)](10) superlattice, which reveal a surprisingly large superconductivity-induced modulation of the vertical ferromagnetic magnetization profile. Most surprisingly, this modulation seems to involve the density rather than the orientation of the magnetization and is highly susceptible to the strain, which is transmitted from the SrTiO(3) substrate. We outline a possible explanation of this unusual superconductivity-induced phenomenon in terms of a phase separation between ferromagnetic and non-ferromagnetic nanodomains in the La(2/3)Ca(1/3)MnO(3) layers.
International Nuclear Information System (INIS)
Va'Vra, J.
1986-02-01
This paper makes an overview of the wire chamber aging problems as a function of various chamber design parameters. It emphasizes the chemistry point of view and many examples are drawn from the plasma chemistry field as a guidance for a possible effort in the wire chamber field. The paper emphasizes the necessity of variable tuning, the importance of purity of the wire chamber environment, as well as it provides a practical list of presently known recommendations. In addition, several models of the wire chamber aging are qualitatively discussed. The paper is based on a summary talk given at the Wire Chamber Aging Workshop held at LBL, Berkeley on January 16-17, 1986. Presented also at Wire Chamber Conference, Vienna, February 25-28, 1986. 74 refs., 18 figs., 11 tabs
Curved anode wire chambers for x-ray diffraction applications
International Nuclear Information System (INIS)
Perez-Mendez, V.; Wiedenbeck, P.; Wagner, C.N.J.; Woelfel, E.
1983-01-01
Curved position sensitive proportional detectors are described. The first has a radius of curvature of 135 mm and a 60 0 angular range. The second has a radius of curvature of 360 mm and a 45 0 angular range. For high quantum efficiency for x-ray energies up to 60 keV, a relatively large x-ray path and high gas pressure are required. The anode wires are suspended in circular arcs by the interaction of a current flowing through them and a magnetic field provided by two permanent magnets placed above and below the wire running parallel to it over the full length of the curved chambers. Anode wire stability under the combined action of the magnetic and electrostatic forces is discussed
Performance Simulation of Unipolar InAs/InAs1-x Sb x Type-II Superlattice Photodetector
Singh, Anand; Pal, Ravinder
2018-05-01
This paper reports performance simulation of a unipolar tunable band gap InAs-InAsSb type-II superlattice (T2SL) infrared photodetector. The generation-recombination and surface leakage currents limit the performance of T2SL photodiodes. Unipolar nBn device design incorporating a suitable barrier layer in the diode structure is taken to suppress the Auger recombination and tunneling currents. At low reverse bias, the generation-recombination current is negligible in the absence of a depletion region, but the dark current is dominated by the diffusion current at higher operation temperatures. The composition, band alignment, barrier width, doping level and thickness of the absorber region are optimized here to achieve low dark current and high quantum efficiency at elevated operating temperatures. Thin unipolar T2SL absorbers are placed in a resonant cavity to enhance photon-material interaction, thus allowing complete absorption in a thinner detector element. It leads to the reduction in the detector volume for lower dark current without affecting the quantum efficiency. It shows an improvement in the quantum efficiency and reduction in the dark current. Dark current density ˜ 10-5 A/cm2 is achievable with low absorber thickness of 2 μm and effective lifetime of 250 ns in the InAs/InAs0.6Sb0.4/B-AlAs1-x Sb x long wave length T2SL detector at 110 K.
Wire communication engineering
International Nuclear Information System (INIS)
Son, Byeong Tae
1997-02-01
This book describes wire telecommunication engineering/ It is divided into eleven chapter, which deal with Introduction with development of telecommunication, voice and sound wave and communication network, Telegraphy with summary of telegraphy, code of telegraphy, communication speed, morse and telex, Telephone on structure, circuit and image telephone, Traffic on telecommunication traffic, transmission of line about theory, cable line and loaded cable, carrier communication with carrier telegraphy and carrier telephone, optical communication with types, structure, specialty, laser and equipment, DATA, Mobile telecommunication on summary, mobile telephone, radio paging and digital mobile telecommunication, ISDN with channel of ISDN, and service of ISDN, and design of telecommunication.
Energy Technology Data Exchange (ETDEWEB)
Adeva, B.; Gomez, F.; Pazos, A.; Pfau, R.; Plo, M. E-mail: maximo.plo@cern.ch; Rodriguez, J.M.; Vazquez, P.; Labbe, J.C
1999-10-11
We present the performance of a new proportional gas detector. Its geometry consists of a cathode plane with 70x70 {mu}m{sup 2} apertures, crossed by 25 {mu}m anode strips to which it is attached by 50 {mu}m kapton spacers. In the region where the avalanche takes place, the anode strips are suspended in the gas mixture as in a standard wire chamber. This detector exhibits high rate capability and large gains, introducing very little material. (author)