WorldWideScience

Sample records for waveguide lasers emitting

  1. Surface-Emitting Distributed Feedback Terahertz Quantum-Cascade Lasers in Metal-Metal Waveguides

    Science.gov (United States)

    Kumar, Sushil; Williams, Benjamin S.; Qin, Qi; Lee, Alan W. M.; Hu, Qing; Reno, John L.

    2007-01-01

    Single-mode surface-emitting distributed feedback terahertz quantumcascade lasers operating around 2.9 THz are developed in metal-metal waveguides. A combination of techniques including precise control of phase of reflection at the facets, and u e of metal on the sidewalls to eliminate higher-order lateral modes allow robust single-mode operation over a range of approximately 0.35 THz. Single-lobed far-field radiation pattern is obtained using a pi phase-shift in center of the second-order Bragg grating. A grating device operating at 2.93 THz lased up to 149 K in pulsed mode and a temperature tuning of 19 .7 GHz was observed from 5 K to 147 K. The same device lased up to 78 K in continuous-wave (cw) mode emitting more than 6 m W of cw power at 5 K. ln general, maximum temperature of pulsed operation for grating devices was within a few Kelvin of that of multi-mode Fabry-Perot ridge lasers

  2. Diode-laser pumping into the emitting level for efficient lasing of depressed cladding waveguides realized in Nd:YVO4 by the direct femtosecond-laser writing technique.

    Science.gov (United States)

    Pavel, Nicolaie; Salamu, Gabriela; Jipa, Florin; Zamfirescu, Marian

    2014-09-22

    Depressed cladding waveguides have been realized in Nd:YVO(4) employing direct writing technique with a femtosecond-laser beam. It was shown that the output performances of such laser devices are improved by the reduction of the quantum defect between the pump wavelength and the laser wavelength. Thus, under the classical pump at 808 nm (i.e. into the (4)F(5/2) level), a 100-μm diameter circular waveguide inscribed in a 0.7-at.% Nd:YVO(4) outputted 1.06-μm laser pulses with 3.0-mJ energy, at 0.30 optical efficiency and slope efficiency of 0.32. The pump at 880 nm (i.e.directly into the (4)F(3/2) emitting level) increased the pulse energy at 3.8 mJ and improved both optical efficiency and slope efficiency at 0.36 and 0.39, respectively. The same waveguide yielded continuous-wave 1.5-W output power at 1.06 μm under the pump at 880 nm. Laser emission at 1.34 μm was also improved using the pump into the (4)F(3/2) emitting level of Nd:YVO(4).

  3. Near-infrared lasers and self-frequency-doubling in Nd:YCOB cladding waveguides.

    Science.gov (United States)

    Ren, Yingying; Chen, Feng; Vázquez de Aldana, Javier R

    2013-05-06

    A design of cladding waveguides in Nd:YCOB nonlinear crystals is demonstrated in this work. Compact Fabry-Perot oscillation cavities are employed for waveguide laser generation at 1062 nm and self-frequency-doubling at 531 nm, under optical pump at 810 nm. The waveguide laser shows slope efficiency as high as 55% at 1062 nm. The SFD green waveguide laser emits at 531 nm with a maximum power of 100 μW.

  4. Evanescent fields of laser written waveguides

    Science.gov (United States)

    Jukić, Dario; Pohl, Thomas; Götte, Jörg B.

    2015-03-01

    We investigate the evanescent field at the surface of laser written waveguides. The waveguides are written by a direct femtosecond laser writing process into fused silica, which is then sanded down to expose the guiding layer. These waveguides support eigenmodes which have an evanescent field reaching into the vacuum above the waveguide. We study the governing wave equations and present solution for the fundamental eigenmodes of the modified waveguides.

  5. Light-emitting waveguide-plasmon polaritions

    NARCIS (Netherlands)

    Rodriguez, S.R.K.; Murai, S.; Verschuuren, M.A.; Gómez Rivas, J.

    2012-01-01

    We demonstrate the generation of light in an optical waveguide strongly coupled to a periodic array of metallic nanoantennas. This coupling gives rise to hybrid waveguide-plasmon polaritons (WPPs), which undergo a transmutation from plasmon to waveguide mode and vice versa as the eigenfrequency

  6. Dielectric waveguide amplifiers and lasers

    NARCIS (Netherlands)

    Pollnau, Markus

    The performance of semiconductor amplifiers and lasers has made them the preferred choice for optical gain on a micro-chip. In the past few years, we have demonstrated that also rare-earth-ion-doped dielectric waveguides show remarkable performance, ranging from a small-signal gain per unit length

  7. Pulsed Laser Deposition: passive and active waveguides

    Czech Academy of Sciences Publication Activity Database

    Jelínek, Miroslav; Flory, F.; Escoubas, L.

    2009-01-01

    Roč. 34, č. 4 (2009), s. 438-449 ISSN 0268-1900 R&D Projects: GA ČR GA202/06/0216 Institutional research plan: CEZ:AV0Z10100522 Keywords : PLD * pulsed laser deposition * laser ablation * passive waveguides * active waveguides * waveguide laser * sensors * thin films * butane detection Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.384, year: 2009

  8. Wavelength-tunable laser based on nonlinear dispersive-wave generation in a tapered optical waveguide

    DEFF Research Database (Denmark)

    2015-01-01

    The present invention relates to a method and a wavelength tunable laser comprising a first laser source configured to emit a first optical pulse having a pump wavelength, the first optical pulse being emitted in a first longitudinal direction. Furthermore, the wavelength tunable laser comprises...... a waveguide extending in the first longitudinal direction, the waveguide having longitudinally varying phase matching conditions, the waveguide being configured to generate a second optical pulse with a centre wavelength upon receiving the first optical pulse, wherein the wavelength tunable laser...... is configured to tune the centre wavelength of the second optical pulse by varying at least one pulse property of the first optical pulse....

  9. Waveguide based external cavity semiconductor lasers

    NARCIS (Netherlands)

    Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

    2012-01-01

    We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

  10. High-power planar dielectric waveguide lasers

    International Nuclear Information System (INIS)

    Shepherd, D.P.; Hettrick, S.J.; Li, C.; Mackenzie, J.I.; Beach, R.J.; Mitchell, S.C.; Meissner, H.E.

    2001-01-01

    The advantages and potential hazards of using a planar waveguide as the host in a high-power diode-pumped laser system are described. The techniques discussed include the use of proximity-coupled diodes, double-clad waveguides, unstable resonators, tapers, and integrated passive Q switches. Laser devices are described based on Yb 3+ -, Nd 3+ -, and Tm 3+ -doped YAG, and monolithic and highly compact waveguide lasers with outputs greater than 10 W are demonstrated. The prospects for scaling to the 100 W level and for further integration of devices for added functionality in a monolithic laser system are discussed. (author)

  11. A hybrid plasmonic waveguide terahertz quantum cascade laser

    Energy Technology Data Exchange (ETDEWEB)

    Degl' Innocenti, Riccardo, E-mail: rd448@cam.ac.uk; Shah, Yash D.; Wallis, Robert; Klimont, Adam; Ren, Yuan; Jessop, David S.; Beere, Harvey E.; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom)

    2015-02-23

    We present the realization of a quantum cascade laser emitting at around 2.85 THz, based on a hybrid plasmonic waveguide with a low refractive index dielectric cladding. This hybrid waveguide design allows the performance of a double-metal waveguide to be retained, while improving the emission far-field. A set of lasers based on the same active region material were fabricated with different metal layer thicknesses. A detailed characterization of the performance of these lasers revealed that there is an optimal trade-off that yields the best far-field emission and the maximum temperature of operation. By exploiting the pure plasmonic mode of these waveguides, the standard operation conditions of a double-metal quantum cascade laser were retrieved, such that the maximum operating temperature of these devices is not affected by the process. These results pave the way to realizing a class of integrated devices working in the terahertz range which could be further exploited to fabricate terahertz on-chip circuitry.

  12. The waveguide Free-Electron Laser. 14

    International Nuclear Information System (INIS)

    Walsh, J.E.

    1990-01-01

    The general characteristics of free-electron lasers (FELs) which employ a waveguiding structure to confine electromagnetic fields and to couple them to the electron beam is discussed. The mode structure of the basic parallel plate waveguide and its adaptation via quasi-optical techniques to FEL resonator design are considered in detail. A summary of the theory of FEL systems which depend intrinsically on a guide structure (micro-undulator, Cerenkov and metal-grating FELs) and a review of progress on waveguide FEL experiments are also presented. (author). 44 refs.; 16 figs

  13. Hybrid vertical-cavity laser with lateral emission into a silicon waveguide

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Xue, Weiqi; Taghizadeh, Alireza

    2015-01-01

    into the waveguide integrated with the laser. This laser has the advantages of long-wavelength vertical-cavity surface-emitting lasers, such as low threshold and high side-mode suppression ratio, while allowing integration with silicon photonic circuits, and is fabricated using CMOS compatible processes. It has......We experimentally demonstrate an optically-pumped III-V/Si vertical-cavity laser with lateral emission into a silicon waveguide. This on-chip hybrid laser comprises a distributed Bragg reflector, a III-V active layer, and a high-contrast grating reflector, which simultaneously funnels light...

  14. Ultrafast Laser Fabrication of Bragg Waveguides in GLS Chalcogenide Glass

    Directory of Open Access Journals (Sweden)

    McMillen Ben

    2013-11-01

    Full Text Available We present work on the fabrication of Bragg waveguides in gallium-lanthanum-sulfide chalcogenide glass using an ultrafast laser. Waveguides were written with a single pass while modulating the writing beam. The spatial and temporal profile of the writing beam was ontrolled during waveguide fabrication in order to control the shape and size of the waveguide cross-section.

  15. Laser generated soliton waveguides in photorefractive crystals

    International Nuclear Information System (INIS)

    Vlad, V.I.; Fazio, E.; Bertolotti, M.; Bosco, A.; Petris, A.

    2005-01-01

    Non-linear photo-excited processes using the photorefractive effect are revisited with emphasis on spatial soliton generation in special laser beam propagation conditions. The soliton beams can create reversible or irreversible single-mode waveguides in the propagating materials. The important features are the 3D orientation and graded index profile matched to the laser fundamental mode. Bright spatial solitons are theoretically demonstrated and experimentally observed for the propagation of c.w. and pulsed femtosecond laser beams in photorefractive materials such as Bi 12 SiO 20 (BSO) and lithium niobate crystals. Applications in high coupling efficiency, adaptive optical interconnections and photonic crystal production are possible

  16. Femtosecond laser written waveguides deep inside silicon.

    Science.gov (United States)

    Pavlov, I; Tokel, O; Pavlova, S; Kadan, V; Makey, G; Turnali, A; Yavuz, Ö; Ilday, F Ö

    2017-08-01

    Photonic devices that can guide, transfer, or modulate light are highly desired in electronics and integrated silicon (Si) photonics. Here, we demonstrate for the first time, to the best of our knowledge, the creation of optical waveguides deep inside Si using femtosecond pulses at a central wavelength of 1.5 μm. To this end, we use 350 fs long, 2 μJ pulses with a repetition rate of 250 kHz from an Er-doped fiber laser, which we focused inside Si to create permanent modifications of the crystal. The position of the beam is accurately controlled with pump-probe imaging during fabrication. Waveguides that were 5.5 mm in length and 20 μm in diameter were created by scanning the focal position along the beam propagation axis. The fabricated waveguides were characterized with a continuous-wave laser operating at 1.5 μm. The refractive index change inside the waveguide was measured with optical shadowgraphy, yielding a value of 6×10 -4 , and by direct light coupling and far-field imaging, yielding a value of 3.5×10 -4 . The formation mechanism of the modification is discussed.

  17. Ring cavity surface emitting semiconductor lasers

    International Nuclear Information System (INIS)

    Mujagic, E.

    2010-01-01

    m. Characterizations indicate a high temperature operation of MIR ring-CSELs along with a reduction in threshold current density of MIR devices by 35% as compared to Fabry-Perot devices. The lower operating currents in ring-CSELs became noticeable in continuous wave (CW) operation with a 50K higher maximum temperature than in FP lasers. A two-fold enhancement in radiation efficiency was obtained in MIR and THz ring-CSELs as compared to FP emitters. The DFB grating on top of the resonator gives rise to a single-mode operation of ring-CSELs for all operation currents. Linear wavelength tuning is achieved by fabricating different gratings periods as well as by a variation in temperature. The slope efficiency and the threshold current density does not seem to significantly depend on the grating period, which is attributed to the absence of mirrors. The incorporated circular waveguide geometry along with the surface emitting character gives rise to symmetric and low divergence azimuthally polarized optical beams. The recorded far-fields indicate a ring shaped interference patterns with lobe separations of 1.34 o and 14.14 o for MIR and THz ring-CSELs, respectively. Fabrication of detuned gratings led to a grating period induced as well as to a tunable wavelength induced beam shaping, with beam patterns ranging from spot to wide ring cross sections. (author) [de

  18. Ti:Sapphire waveguide lasers

    NARCIS (Netherlands)

    Pollnau, Markus; Pashinin, P.P.; Grivas, C.; Laversenne, L.; Wilkinson, J.S.; Eason, R.W.; Shepherd, D.P.

    2007-01-01

    Titanium-doped sapphire is one of the most prominent laser materials and is appreciated for its excellent heat conductivity and broadband gain spectrum, allowing for a wide wavelength tunability and generation of ultrashort pulses. As one of the hardest materials, it can also serve as a model system

  19. Femtosecond laser inscribed cladding waveguide lasers in Nd:LiYF4 crystals

    Science.gov (United States)

    Li, Shi-Ling; Huang, Ze-Ping; Ye, Yong-Kai; Wang, Hai-Long

    2018-06-01

    Depressed circular cladding, buried waveguides were fabricated in Nd:LiYF4 crystals with an ultrafast Yb-doped fiber master-oscillator power amplifier laser. Waveguides were optimized by varying the laser writing conditions, such as pulse energy, focus depth, femtosecond laser polarization and scanning velocity. Under optical pump at 799 nm, cladding waveguides showed continuous-wave laser oscillation at 1047 nm. Single- and multi-transverse modes waveguide laser were realized by varying the waveguide diameter. The maximum output power in the 40 μm waveguide is ∼195 mW with a slope efficiency of 34.3%. The waveguide lasers with hexagonal and cubic cladding geometry were also realized.

  20. Electrically pumped edge-emitting photonic bandgap semiconductor laser

    Science.gov (United States)

    Lin, Shawn-Yu; Zubrzycki, Walter J.

    2004-01-06

    A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

  1. ytterbium- & erbium-doped silica for planar waveguide lasers & amplifiers

    DEFF Research Database (Denmark)

    Dyndgaard, Morten Glarborg

    2001-01-01

    The purpose of this work was to demonstrate ytterbium doped planar components and investigate the possibilities of making erbium/ytterbium codoped planar waveguides in germano-silica glass. Furthermore, tools for modelling lasers and erbium/ytterbium doped amplifiers. The planar waveguides were...

  2. Single-transverse-mode Ti:sapphire rib waveguide laser

    NARCIS (Netherlands)

    Grivas, C.; Shepherd, D.P.; May-Smith, T.C.; Eason, R.W.; Pollnau, Markus

    2005-01-01

    Laser operation of Ti:sapphire rib waveguides fabricated using photolithography and ion beam etching in pulsed laser deposited layers is reported. Polarized laser emission was observed at 792.5 nm with an absorbed pump power threshold of 265 mW, which is more than a factor of 2 lower in comparison

  3. Optically amplifying planar glass waveguides: Laser on a chip

    DEFF Research Database (Denmark)

    Guldberg-Kjær, Søren Andreas

    with UV-light and that permanent Bragg-gratings can be induced. Planar waveguide lasers with integrated Bragg-gratings are manufactured and characterised. It is shown that linewidths below 125 kHz and output powers around 0.5 mW can be obtained, and that the manufactured lasers are resistant to mechanical...... lightwave circuits, as well as provide the gain medium for integrated planar waveguide lasers. The work and the obtained results are presented in this thesis: The manufacturing of silica thin films is described and it is shown that the refractive index of the films can be controlled by germanium co...... as well as thermal influence. A simple method for producing an array of planar waveguide lasers is presented and it is shown that the difference in output wavelength of the individual lasers can be controlled with great accuracy....

  4. Planar waveguide amplifiers and laser in erbium doped silica

    DEFF Research Database (Denmark)

    Guldberg-Kjær, Søren Andreas; Kristensen, Martin

    1999-01-01

    with UV-light and that permanent Bragg-gratings can be induced. Planar waveguide lasers with integrated Bragg-gratings are manufactured and characterised. It is shown that linewidths below 125 kHz and output powers around 0.5 mW can be obtained, and that the manufactured lasers are resistant to mechanical...... lightwave circuits, as well as provide the gain medium for integrated planar waveguide lasers. The work and the obtained results are presented in this thesis: The manufacturing of silica thin films is described and it is shown that the refractive index o fthe films can be controlled by germanium co...... as well as thermal influence. A simple method for producing an array of planar waveguide lasers is presented and it is shown that the difference in output wavelength of the individual lasers can be controlled with great accuracy....

  5. Femtosecond laser inscribed cladding waveguides in Nd:YAG ceramics: fabrication, fluorescence imaging and laser performance.

    Science.gov (United States)

    Liu, Hongliang; Jia, Yuechen; Vázquez de Aldana, Javier Rodríguez; Jaque, Daniel; Chen, Feng

    2012-08-13

    We report on the fabrication of depressed cladding waveguide lasers in Nd:YAG (neodymium doped yttrium aluminum garnet, Nd:Y3Al5O12) ceramics microstructured by femtosecond laser pulses. Full control over the confined light spatial distribution is demonstrated by the fabrication of high contrast waveguides with hexagonal, circular and trapezoidal configurations. The confocal fluorescence measurements of the waveguides reveal that the original luminescence features of Nd3+ ions are well-preserved in the waveguide regions. Under optical pump at 808 nm, cladding waveguides showed continuous wave efficient laser oscillation. The maximum output power obtained at 1064.5 nm is ~181 mW with a slope efficiency as high as 44%, which suggests that the fabricated Nd:YAG ceramic waveguides are promising candidates for efficient integrated laser sources.

  6. Highly efficient single-pass frequency doubling of a continuous-wave distributed feedback laser diode using a PPLN waveguide crystal at 488 nm.

    Science.gov (United States)

    Jechow, Andreas; Schedel, Marco; Stry, Sandra; Sacher, Joachim; Menzel, Ralf

    2007-10-15

    A continuous-wave distributed feedback diode laser emitting at 976 nm was frequency doubled by the use of a periodically poled lithium niobate waveguide crystal with a channel size of 3 microm x 5 microm and an interaction length of 10 mm. A laser to waveguide coupling efficiency of 75% could be achieved resulting in 304 mW of incident infrared light inside the waveguide. Blue laser light emission of 159 mW at 488 nm has been generated, which equals to a conversion efficiency of 52%. The resulting wall plug efficiency was 7.4%.

  7. Fabrication, operation, and applications of efficient dielectric waveguide lasers

    NARCIS (Netherlands)

    Pollnau, Markus; van Dalfsen, Koop; Bernhardi, Edward; Geskus, D.; Worhoff, Kerstin; de Ridder, R.M.; García Blanco, Sonia Maria

    This paper reviews our recent results on rare-earth-ion-doped integrated lasers. We have concentrated our efforts on crystalline potassium double tungstates and amorphous aluminum oxide. In the former material class we have demonstrated channel waveguide lasers based on Yb3+ doping, operating near 1

  8. Broadband Optical Active Waveguides Written by Femtosecond Laser Pulses in Lithium Fluoride

    International Nuclear Information System (INIS)

    Chiamenti, Ismael; Costa, Larissa N. da; Kalinowski, Hypolito J.; Bonfigli, Francesca; Montereali, Rosa Maria; Gomes Anderson, S. L.

    2014-01-01

    Broadband waveguiding through light-emitting strips directly written in a blank lithium fluoride crystal with a femtosecond laser is reported. Light guiding was observed at several optical wavelengths, from blue, 458 nm, to near-infrared, at 1550 nm. Visible photoluminescence spectra of the optically active F 2 and F 3 + color centers produced by the fs laser writing process were measured. The wavelength-dependent refractive index increase was estimated to be in the order of 10 −3 −10 −4 in the visible and near-infrared spectral intervals, which is consistent with the stable formation of point defects in LiF

  9. Broadband Optical Active Waveguides Written by Femtosecond Laser Pulses in Lithium Fluoride

    Science.gov (United States)

    Ismael, Chiamenti; Francesca, Bonfigli; Anderson, S. L. Gomes; Rosa, Maria Montereali; Larissa, N. da Costa; Hypolito, J. Kalinowski

    2014-01-01

    Broadband waveguiding through light-emitting strips directly written in a blank lithium fluoride crystal with a femtosecond laser is reported. Light guiding was observed at several optical wavelengths, from blue, 458 nm, to near-infrared, at 1550 nm. Visible photoluminescence spectra of the optically active F2 and F3+ color centers produced by the fs laser writing process were measured. The wavelength-dependent refractive index increase was estimated to be in the order of 10-3-10-4 in the visible and near-infrared spectral intervals, which is consistent with the stable formation of point defects in LiF.

  10. Development of a diamond waveguide sensor for sensitive protein analysis using IR quantum cascade lasers

    Science.gov (United States)

    Piron, P.; Vargas Catalan, E.; Haas, J.; Österlund, L.; Nikolajeff, F.; Andersson, P. O.; Bergström, J.; Mizaikoff, B.; Karlsson, M.

    2018-02-01

    Microfabricated diamond waveguides, between 5 and 20 μm thick, manufactured by chemical vapor deposition of diamond, followed by standard lithographic techniques and inductively coupled plasma etching of diamond, are used as bio-chemical sensors in the mid infrared domain: 5-11 μm. Infrared light, emitted from a broadly tunable quantum cascade laser with a wavelength resolution smaller than 20 nm, is coupled through the diamond waveguides for attenuated total reflection spectroscopy. The expected advantages of these waveguides are a high sensitivity due to the high number of internal reflections along the propagation direction, a high transmittance in the mid-IR domain, the bio-compatibility of diamond and the possibility of functionalizing the surface layer. The sensor will be used for analyzing different forms of proteins such as α-synuclein which is relevant in understanding the mechanism behind Parkinson's disease. The fabrication process of the waveguide, its characteristics and several geometries are introduced. The optical setup of the biosensor is described and our first measurements on two analytes to demonstrate the principle of the sensing method will be presented. Future use of this sensor includes the functionalization of the diamond waveguide sensor surface to be able to fish out alpha-synuclein from cerebrospinal fluid.

  11. Nd:Ta2O5 rib waveguide lasers

    International Nuclear Information System (INIS)

    Unal, Bayram; Tai, C.-Y.; Shepherd, David P.; Wilkinson, James S.; Perney, Nicolas M.B.; Netti, M. Caterina; Parker, Gregory J.

    2005-01-01

    Ta 2 O 5 waveguides offer great potential for high-density active photonic crystal circuits and their combination with rare-earth dopants for active devices is of interest for increasing their potential functionality. To this end, neodymium-doped Ta 2 O 5 rib waveguide lasers have been fabricated on an oxidized silicon wafer by rf sputtering and argon ion-beam milling and laser action in this material has been demonstrated. Lasing was observed at wavelenghts between 1060 and 1080 nm and an absorbed pump power threshold of 87 mW was obtained

  12. Planar waveguide laser in Er/Al-doped germanosilicate

    DEFF Research Database (Denmark)

    Guldberg-Kjær, Søren Andreas; Hübner, Jörg; Kristensen, Martin

    1999-01-01

    A singlemode DBR laser is demonstrated in an Er/Al-doped germanosilicate planar waveguide. 0.4 mW of output power has been obtained at 1.553 mu m using internal Bragg reflectors produced by UV-induced index modulations.......A singlemode DBR laser is demonstrated in an Er/Al-doped germanosilicate planar waveguide. 0.4 mW of output power has been obtained at 1.553 mu m using internal Bragg reflectors produced by UV-induced index modulations....

  13. Femtosecond laser writing of waveguides in zinc phosphate glasses [Invited

    NARCIS (Netherlands)

    Fletcher, L.B.; Witcher, J.J.; Troy, N.; Reis, S.T.; Brow, R.K.; Martinez Vazquez, R.; Osellame, R.; Krol, D.M.

    2011-01-01

    We have studied the relationship between the initial glass composition and the structural changes associated with laser-induced refractive index modification in a series of Er-Yb doped and undoped zinc phosphate glasses. White light microscopy and waveguide experiments are used together with Raman

  14. Graphene Q-switched Yb:KYW planar waveguide laser

    NARCIS (Netherlands)

    Kim, Jun Wan; Choi, Sun Young; Aravazhi, S.; Pollnau, Markus; Griebner, Uwe; Petrov, Valentin; Bae, Sukang; Ahn, Kwang Jun; Yeom, Dong-Il; Rotermund, Fabian

    A diode-pumped Yb:KYW planar waveguide laser, single-mode Q-switched by evanescent-field interaction with graphene, is demonstrated for the first time. Few-layer graphene grown by chemical vapor deposition is transferred onto the top of a guiding layer, which initiates stable Q-switched operation in

  15. Investigation of single lateral mode for 852nm diode lasers with ridge waveguide design

    Science.gov (United States)

    Liu, Chu; Guan, Baolu; Mi, Guoxin; Liao, Yiru; Liu, Zhenyang; Li, Jianjun; Xu, Chen

    2016-11-01

    852nm Narrow linewidth lasers can be widely used in the field of ultra-fine spectrum measurement, Cs atomic clock control, satellite and optical fiber communication and so on. Furthermore, the stability of the single lateral mode is a very important condition to guarantee the narrow linewidth lasers. Here we investigate experimentally the influence of the narrow ridge structure and asymmetrical waveguide design on the stability single lateral mode of an 852nm diode laser. According to the waveguide theoretical analysis, ridge mesa etch depth (Δη , related to the refractive index difference of parallel to the junction) and ridge mesa width (the narrower the more control force to low order mode) are the main elements for lateral modes. In this paper, we designed different structures to investigate and verify major factors for lateral mode by experiment, and to confirm our thought. Finally, the 5μm mesa ridge laser, 800nm etch depth, with groove structure obtains excellent steady single lateral mode output by 150mA operating current and 30°C temperature. The optical spectrum FWHM is 0.5nm and side mode suppression ratio is 27dBm with uncoated. The laser with 1mm cavity length showed the threshold current of 50mA, a lasing wavelength of λ = 852.6nm, slope efficiency of above 0.7mW/mA. We accomplished single lateral mode of ridge waveguide edge-emitting lasers which can also be used as a laser source in the ultra-narrow linewidth external cavity laser system.

  16. 970-nm ridge waveguide diode laser bars for high power DWBC systems

    Science.gov (United States)

    Wilkens, Martin; Erbert, Götz; Wenzel, Hans; Knigge, Andrea; Crump, Paul; Maaßdorf, Andre; Fricke, Jörg; Ressel, Peter; Strohmaier, Stephan; Schmidt, Berthold; Tränkle, Günther

    2018-02-01

    de lasers are key components in material processing laser systems. While mostly used as pump sources for solid state or fiber lasers, direct diode laser systems using dense wavelength multiplexing have come on the market in recent years. These systems are realized with broad area lasers typically, resulting in beam quality inferior to disk or fiber lasers. We will present recent results of highly efficient ridge waveguide (RW) lasers, developed for dense-wavelength-beamcombining (DWBC) laser systems expecting beam qualities comparable to solid state laser systems and higher power conversion efficiencies (PCE). The newly developed RW lasers are based on vertical structures with an extreme double asymmetric large optical cavity. Besides a low vertical divergence these structures are suitable for RW-lasers with (10 μm) broad ridges, emitting in a single mode with a good beam quality. The large stripe width enables a lateral divergence below 10° (95 % power content) and a high PCE by a comparably low series resistance. We present results of single emitters and small test arrays under different external feedback conditions. Single emitters can be tuned from 950 nm to 975 nm and reach 1 W optical power with more than 55 % PCE and a beam quality of M2 < 2 over the full wavelength range. The spectral width is below 30 pm FWHM. 5 emitter arrays were stabilized using the same setup. Up to now we reached 3 W optical power, limited by power supply, with 5 narrow spectral lines.

  17. Guiding of laser pulses in plasma waveguides created by linearly-polarized femtosecond laser pulses

    OpenAIRE

    Lemos, N.; Cardoso, L.; Geada, J.; Figueira, G.; Albert, F.; Dias, J. M.

    2018-01-01

    We experimentally demonstrate that plasma waveguides produced with ultra-short laser pulses (sub-picosecond) in gas jets are capable of guiding high intensity laser pulses. This scheme has the unique ability of guiding a high-intensity laser pulse in a plasma waveguide created by the same laser system in the very simple and stable experimental setup. A hot plasma column was created by a femtosecond class laser that expands into an on-axis parabolic low density profile suitable to act as a wav...

  18. Monolithic micro-laser with KTP ridge waveguides for injection seeding high power lasers, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This NASA Small Business Innovation Research Phase I project will develop a technique to greatly improve the direct coupling of a diode laser to an optical waveguide...

  19. GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode

    KAUST Repository

    Shen, Chao; Lee, Changmin; Ng, Tien Khee; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.; Alyamani, Ahmed Y.; Eldesouki, Munir M.; Ooi, Boon S.

    2017-01-01

    A 404-nm emitting InGaN-based laser diode with integrated-waveguide-modulator showing a large extinction ratio of 11.3 dB was demonstrated on semipolar (2021) plane GaN substrate. The device shows a low modulation voltage of −2.5 V and ∼ GHz −3 dB bandwidth, enabling 1.7 Gbps data transmission.

  20. GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode

    KAUST Repository

    Shen, Chao

    2017-01-30

    A 404-nm emitting InGaN-based laser diode with integrated-waveguide-modulator showing a large extinction ratio of 11.3 dB was demonstrated on semipolar (2021) plane GaN substrate. The device shows a low modulation voltage of −2.5 V and ∼ GHz −3 dB bandwidth, enabling 1.7 Gbps data transmission.

  1. Fluorescence imaging of lattice re-distribution on step-index direct laser written Nd:YAG waveguide lasers

    Energy Technology Data Exchange (ETDEWEB)

    Martínez de Mendívil, Jon; Pérez Delgado, Alberto; Lifante, Ginés; Jaque, Daniel [Departamento de Física de Materiales, Facultad de Ciencias, Universidad Autónoma de Madrid, Madrid 28049 (Spain); Ródenas, Airán [Departament de Química Física i Inorgànica, Universitat Rovira i Virgili, Tarragona 43007 (Spain); Institute of Photonics and Quantum Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom); Benayas, Antonio, E-mail: antonio.benayas@emt.inrs.ca [Departamento de Física de Materiales, Facultad de Ciencias, Universidad Autónoma de Madrid, Madrid 28049 (Spain); Institut National de la Recherche Scientifique, Centre – Énergie Matériaux et Télécommunications, 1650, Boul. Lionel Boulet Varennes, Quebec J3X 1S2 (Canada); Aguiló, Magdalena; Diaz, Francesc [Departament de Química Física i Inorgànica, Universitat Rovira i Virgili, Tarragona 43007 (Spain); Kar, Ajoy K. [Institute of Photonics and Quantum Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom)

    2015-01-14

    The laser performance and crystalline micro-structural properties of near-infrared step-index channel waveguides fabricated inside Neodymium doped YAG laser ceramics by means of three-dimensional sub-picosecond pulse laser direct writing are reported. Fluorescence micro-mapping of the waveguide cross-sections reveals that an essential crystal lattice re-distribution has been induced after short pulse irradiation. Such lattice re-distribution is evidenced at the waveguide core corresponding to the laser written refractive index increased volume. The waveguides core surroundings also present diverse changes including slight lattice disorder and bi-axial strain fields. The step-index waveguide laser performance is compared with previous laser fabricated waveguides with a stress-optic guiding mechanism in absence of laser induced lattice re-distribution.

  2. Waveguide and active region structure optimization for low-divergence InAs/InGaAs quantum dot comb lasers

    Science.gov (United States)

    Korenev, Vladimir V.; Savelyev, Artem V.; Zhukov, Alexey E.; Maximov, Mikhail V.; Omelchenko, Alexander V.

    2015-05-01

    Ways to improve beam divergence and energy consumption of quantum dot lasers emitting via the ground-state optical transitions by optimization of the key parameters of laser active region are discussed. It is shown that there exist an optimal cavity length, dispersion of inhomogeneous broadening and number of QD layers in active region allowing to obtain lasing spectrum of a given width at minimum injection current. The planar dielectric waveguide of the laser is optimized by analytical means for a better trade-off between high Γ-factor and low beam divergence.

  3. Index-antiguided planar waveguide lasers with large mode area

    Science.gov (United States)

    Liu, Yuanye

    The on-going research and application interests with high power large-mode-area (LMA) waveguide lasers, especially in fiber geometry, at the beginning of this century drive the development of many novel waveguide designs. Index antiguiding, proposed by Siegman in 2003, is among one of them. The goal for index antiguiding is to introduce transversal modal loss with the relative simple waveguide design while maintain single transverse mode operation for good beam quality. The idea which is selectively support of fundamental mode is facilitated by involving certain level of signal regeneration inside the waveguide core. Since the modal loss is closed associated with waveguide design parameters such as core size and refractive index, the amount of gain inside the core provides active control of transverse modes inside index-antiguiding waveguide. For example, fundamental transverse mode inside such waveguide can be excited and propagate lossless when sufficient optical gain is provided. This often requires doped waveguide core and optical pumping at corresponding absorption band. However, the involvement of optical pumping also has its consequences. Phenomena such as thermal-optic effect and gain spatial hole-burning which are commonly found in bulk lasers request attention when scaling up output power with LMA index-antiguided waveguide amplifiers and resonators. In response, three key challenges of index-antiguided planar waveguide lasers, namely, guiding mechanism, power efficiency and transverse mode discrimination, are analyzed theoretically and experimentally in this dissertation. Experiments are based on two index-antiguided planar waveguide chips, whose core thickness are 220 microm and 400 microm respectively. The material of waveguide core is 1% Neodymium-doped Yttrium Aluminium garnet, or Nd:YAG while the cladding is made from Terbium Gallium garnet, or TGG. Due to the face pumping and limited pump power, it is found, with 220 microm-thick-core chip, that

  4. Laser cutting technology using water jet waveguide

    International Nuclear Information System (INIS)

    Akiba, Miyuki; Shiihara, Katsunori; Chida, Itaru

    2013-01-01

    Laser with water jet is examined to cut in-vessel structure. However, it is necessary to increase the break-up length of water jet to cut a thick plate. Therefore, the effects of the water jet parameter (water pressure, assist gas, laser power) on break-up length were investigated. It was found from observation results of water jet that the longest break-up length is about 135mm under condition of water pressure 40 MPa, laser power 30W and helium assist gas 1L/min. (author)

  5. The formation and optical properties of planar waveguide in laser crystal Nd:YGG by carbon ion implantation

    Science.gov (United States)

    Zhao, Jin-Hua; Qin, Xi-Feng; Wang, Feng-Xiang; Jiao, Yang; Guan, Jing; Fu, Gang

    2017-10-01

    As one kind of prominent laser crystal, Nd:Y3Ga5O12 (Nd:YGG) crystal has outstanding performance on laser excitation at multi-wavelength which have shown promising applications in optical communication field. In addition, Nd:YGG crystal has potential applications in medical field due to its ability of emit the laser at 1110 nm. Optical waveguide structure with high quality could improve the efficiency of laser emission. In this work, we fabricated the optical planar waveguide on Nd:YGG crystal by medium mass ion implantation which was convinced an effective method to realize a waveguide structure with superior optical properties. The sample is implanted by C ions at energy of 5.0 MeV with the fluence of 1 × 1015 ions/cm2. We researched the optical propagation properties in the Nd:YGG waveguide by end-face coupling and prism coupling method. The Nd ions fluorescent properties are obtained by a confocal micro-luminescence measurement. The fluorescent properties of Nd ions obtained good reservation after C ion implantation. Our work has reference value for the application of Nd:YGG crystal in the field of optical communication.

  6. Semiconductor ring lasers coupled by a single waveguide

    Science.gov (United States)

    Coomans, W.; Gelens, L.; Van der Sande, G.; Mezosi, G.; Sorel, M.; Danckaert, J.; Verschaffelt, G.

    2012-06-01

    We experimentally and theoretically study the characteristics of semiconductor ring lasers bidirectionally coupled by a single bus waveguide. This configuration has, e.g., been suggested for use as an optical memory and as an optical neural network motif. The main results are that the coupling can destabilize the state in which both rings lase in the same direction, and it brings to life a state with equal powers at both outputs. These are both undesirable for optical memory operation. Although the coupling between the rings is bidirectional, the destabilization occurs due to behavior similar to an optically injected laser system.

  7. Plasmonic Waveguide-Integrated Nanowire Laser

    DEFF Research Database (Denmark)

    Bermudez-Urena, Esteban; Tutuncuoglu, Gozde; Cuerda, Javier

    2017-01-01

    technologies. Despite significant advances in their fundamental aspects, the integration within scalable photonic circuitry remains challenging. Here we report on the realization of hybrid photonic devices consisting of nanowire lasers integrated with wafer-scale lithographically designed V-groove plasmonic......Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication...

  8. Heterogeneous integration of thin film compound semiconductor lasers and SU8 waveguides on SiO2/Si

    Science.gov (United States)

    Palit, Sabarni; Kirch, Jeremy; Mawst, Luke; Kuech, Thomas; Jokerst, Nan Marie

    2010-02-01

    We present the heterogeneous integration of a 3.8 μm thick InGaAs/GaAs edge emitting laser that was metal-metal bonded to SiO2/Si and end-fire coupled into a 2.8 μm thick tapered SU8 polymer waveguide integrated on the same substrate. The system was driven in pulsed mode and the waveguide output was captured on an IR imaging array to characterize the mode. The waveguide output was also coupled into a multimode fiber, and into an optical head and spectrum analyzer, indicating lasing at ~997 nm and a threshold current density of 250 A/cm2.

  9. Plasmonic Waveguide-Integrated Nanowire Laser

    DEFF Research Database (Denmark)

    Bermudez-Urena, Esteban; Tutuncuoglu, Gozde; Cuerda, Javier

    2017-01-01

    Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication technolog......Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication...... technologies. Despite significant advances in their fundamental aspects, the integration within scalable photonic circuitry remains challenging. Here we report on the realization of hybrid photonic devices consisting of nanowire lasers integrated with wafer-scale lithographically designed V-groove plasmonic...

  10. Improving the beam quality of high-power laser diodes by introducing lateral periodicity into waveguides

    Science.gov (United States)

    Sobczak, Grzegorz; DÄ browska, ElŻbieta; Teodorczyk, Marian; Kalbarczyk, Joanna; MalÄ g, Andrzej

    2013-01-01

    Low quality of the optical beam emitted by high-power laser diodes is the main disadvantage of these devices. The two most important reasons are highly non-Gaussian beam profile with relatively wide divergence in the junction plane and the filamentation effect. Designing laser diode as an array of narrow, close to each other single-mode waveguides is one of the solutions to this problem. In such devices called phase locked arrays (PLA) there is no room for filaments formation. The consequence of optical coupling of many single-mode waveguides is the device emission in the form of few almost diffraction limited beams. Because of losses in regions between active stripes the PLA devices have, however, somewhat higher threshold current and lower slope efficiencies compared to wide-stripe devices of similar geometry. In this work the concept of the high-power laser diode resonator consisted of joined PLA and wide stripe segments is proposed. Resulting changes of electro-optical characteristics of PLA are discussed. The devices are based on the asymmetric heterostructure designed for improvement of the catastrophic optical damage threshold as well as thermal and electrical resistances. Due to reduced distance from the active layer to surface in this heterostructure, better stability of current (and gain) distribution with changing drive level is expected. This could lead to better stability of optical field distribution and supermodes control. The beam divergence reduction in the direction perpendicular of the junction plane has been also achieved.

  11. Generation of Bright, Spatially Coherent Soft X-Ray High Harmonics in a Hollow Waveguide Using Two-Color Synthesized Laser Pulses.

    Science.gov (United States)

    Jin, Cheng; Stein, Gregory J; Hong, Kyung-Han; Lin, C D

    2015-07-24

    We investigate the efficient generation of low-divergence high-order harmonics driven by waveform-optimized laser pulses in a gas-filled hollow waveguide. The drive waveform is obtained by synthesizing two-color laser pulses, optimized such that highest harmonic yields are emitted from each atom. Optimization of the gas pressure and waveguide configuration has enabled us to produce bright and spatially coherent harmonics extending from the extreme ultraviolet to soft x rays. Our study on the interplay among waveguide mode, atomic dispersion, and plasma effect uncovers how dynamic phase matching is accomplished and how an optimized waveform is maintained when optimal waveguide parameters (radius and length) and gas pressure are identified. Our analysis should help laboratory development in the generation of high-flux bright coherent soft x rays as tabletop light sources for applications.

  12. Integration of quantum cascade lasers and passive waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Montoya, Juan, E-mail: juan.montoya@ll.mit.edu; Wang, Christine; Goyal, Anish; Creedon, Kevin; Connors, Michael; Daulton, Jeffrey; Donnelly, Joseph; Missaggia, Leo; Aleshire, Chris; Sanchez-Rubio, Antonio; Herzog, William [MIT Lincoln Laboratory, 244 Wood St, Lexington, Massachusetts 02420 (United States)

    2015-07-20

    We report on monolithic integration of active quantum cascade laser (QCL) materials with passive waveguides formed by using proton implantation. Proton implantation reduces the electron concentration in the QCL layers by creating deep levels that trap carriers. This strongly reduces the intersubband absorption and the free-carrier absorption in the gain region and surrounding layers, thus significantly reducing optical loss. We have measured loss as low as α = 0.33 cm{sup −1} in λ = 9.6 μm wavelength proton-implanted QCL material. We have also demonstrated lasing in active-passive integrated waveguides. This simple integration technique is anticipated to enable low-cost fabrication in infrared photonic integrated circuits in the mid-infrared (λ ∼ 3–16 μm)

  13. Integration of quantum cascade lasers and passive waveguides

    International Nuclear Information System (INIS)

    Montoya, Juan; Wang, Christine; Goyal, Anish; Creedon, Kevin; Connors, Michael; Daulton, Jeffrey; Donnelly, Joseph; Missaggia, Leo; Aleshire, Chris; Sanchez-Rubio, Antonio; Herzog, William

    2015-01-01

    We report on monolithic integration of active quantum cascade laser (QCL) materials with passive waveguides formed by using proton implantation. Proton implantation reduces the electron concentration in the QCL layers by creating deep levels that trap carriers. This strongly reduces the intersubband absorption and the free-carrier absorption in the gain region and surrounding layers, thus significantly reducing optical loss. We have measured loss as low as α = 0.33 cm −1 in λ = 9.6 μm wavelength proton-implanted QCL material. We have also demonstrated lasing in active-passive integrated waveguides. This simple integration technique is anticipated to enable low-cost fabrication in infrared photonic integrated circuits in the mid-infrared (λ ∼ 3–16 μm)

  14. Characterization of Bragg gratings in Al2O3 waveguides fabricated by focused ion beam milling and laser interference lithography

    NARCIS (Netherlands)

    Ay, F.; Bernhardi, Edward; Agazzi, L.; Bradley, J.; Worhoff, Kerstin; Pollnau, Markus; de Ridder, R.M.

    Optical grating cavities in Al2O3 channel waveguides were successfully defined by focused ion beam milling and laser interference lithography. Both methods are shown to be suitable for realizing resonant structures for on-chip waveguide lasers.

  15. Laser plant "Iguana" for transmyocardial revascularization based on kW-level waveguide CO2 laser

    Science.gov (United States)

    Panchenko, Vladislav Y.; Bockeria, L. A.; Berishvili, I. I.; Vasiltsov, Victor V.; Golubev, Vladimir S.; Ul'yanov, Valery A.

    2001-05-01

    For many years the Institute on Laser and Information Technologies RAN has been developing a concept of high-power industrial CO2 lasers with diffusion cooling of the working medium. The paper gives a description of the laser medical system Iguana for transmyocardial laser revascularization (TMLR) as an example of various applications of high-power waveguide CO2 lasers. The clinical results of the TMLR method application in surgical treatment are presented. The methods of determination of the time, when the laser beam passes through the demarcation line between myocardium tissue and blood, are discussed.

  16. UV laser-assisted fabrication of ridge waveguides in lithium niobate crystals

    OpenAIRE

    Sones, C.L.; Ying, C.Y.J.; Eason, R.W.; Mailis, S.; Ganguly, P.; Soergel, E.

    2010-01-01

    We present a UV laser-assisted method for the fabrication of ridge waveguides in lithium niobate. The UV laser irradiation step provides the refractive index change required for the vertical light confinement in the waveguide and also defines the ferroelectric domain pattern which produces the ridge structures after chemical etching.

  17. Infrared plasmonic nano-lasers based on Metal Insulator Metal waveguides

    NARCIS (Netherlands)

    Hill, M.T.

    2010-01-01

    We will present our latest results on metal-insulator-metal waveguide devices, in particular reducing the dimensions of devices and distributed feedback lasers. Also we will examine potential useful applications for metal nano-lasers.

  18. Concept of infrared laser particle accelerators with oversized DBR and HFB waveguides

    International Nuclear Information System (INIS)

    Arnesson, J.; Gnepf, S.; Nessi, M.; Woelfli, W.; Kneubuehl, F.K.

    1986-01-01

    We present an infrared-laser accelerator scheme which makes use of hollow oversized linear periodic and helical waveguide structures originally designed for distributed feedback (DFB) and helical feedback (HFB) lasers

  19. Low-loss optical waveguides in β-BBO crystal fabricated by femtosecond-laser writing

    Science.gov (United States)

    Li, Ziqi; Cheng, Chen; Romero, Carolina; Lu, Qingming; Vázquez de Aldana, Javier Rodríguez; Chen, Feng

    2017-11-01

    We report on the fabrication and characterization of β-BBO depressed cladding waveguides fabricated by femtosecond-laser writing with no significant changes in the waveguide lattice microstructure. The waveguiding properties and the propagation losses of the cladding structures are investigated, showing good transmission properties at wavelengths of 400 and 800 nm along TM polarization. The minimum propagation losses are measured to be as low as 0.19 dB/cm at wavelength of 800 nm. The well-preserved waveguide lattice microstructure and good guiding performances with low propagation losses suggest the potential applications of the cladding waveguides in β-BBO crystal as novel integrated photonic devices.

  20. Tubular depressed cladding waveguide laser realized in Yb: YAG by direct inscription of femtosecond laser

    International Nuclear Information System (INIS)

    Tang, Wenlong; Zhang, Wenfu; Liu, Xin; Liu, Shuang; Cheng, Guanghua; Stoian, Razvan

    2015-01-01

    We report on the fabrication of tubular depressed cladding waveguides in single crystalline Yb:YAG by the direct femtosecond laser writing technique. Full control over the confined light spatial distribution is demonstrated by the photoinscription of high index contrast waveguides with tubular configuration. Under optical pumping, highly efficient laser oscillation in depressed cladding waveguide at 1030 nm is demonstrated. The maximum output power obtained is 68 mW with a slope efficiency of 35% for an outcoupling transmission of 50%. A slope efficiency as high as 44% is realized when the coupling output ratio is 91% and a low lasing threshold of 70 mW is achieved with the output coupling mirror of 10%. (paper)

  1. Waveguides fabricated by femtosecond laser exploiting both depressed cladding and stress-induced guiding core.

    Science.gov (United States)

    Dong, Ming-Ming; Wang, Cheng-Wei; Wu, Zheng-Xiang; Zhang, Yang; Pan, Huai-Hai; Zhao, Quan-Zhong

    2013-07-01

    We report on the fabrication of stress-induced optical channel waveguides and waveguide splitters with laser-depressed cladding by femtosecond laser. The laser beam was focused into neodymium doped phosphate glass by an objective producing a destructive filament. By moving the sample along an enclosed routine in the horizontal plane followed by a minor descent less than the filament length in the vertical direction, a cylinder with rarified periphery and densified center region was fabricated. Lining up the segments in partially overlapping sequence enabled waveguiding therein. The refractive-index contrast, near- and far-field mode distribution and confocal microscope fluorescence image of the waveguide were obtained. 1-to-2, 1-to-3 and 1-to-4 splitters were also machined with adjustable splitting ratio. Compared with traditional femtosecond laser writing methods, waveguides prepared by this approach showed controllable mode conduction, strong field confinement, large numerical aperture, low propagation loss and intact core region.

  2. Near-field microscopy of waveguide architectures of InGaN/GaN diode lasers

    Science.gov (United States)

    Friede, Sebastian; Tomm, Jens W.; Kühn, Sergei; Hoffmann, Veit; Wenzel, Hans; Weyers, Markus

    2016-11-01

    Waveguide (WG) architectures of 420 nm emitting InGaN/GaN diode lasers are analyzed by photoluminescence and photocurrent spectroscopy using a nearfield scanning optical microscope that scans along their front facets. The components of the ‘optical active cavity’, quantum wells, WGs, and cladding layers are individually inspected with a spatial resolution of ∼100 nm. Separate analysis of the p- and n-sections of the WG was achieved, and reveals defect levels in the p-part. Moreover, it is demonstrated that the homogeneity of the n-WG section directly affects the quantum wells that are grown on top of this layer. Substantially increased carrier capture efficiencies into InGaN/GaN-WGs compared to GaN-WGs are demonstrated.

  3. Surface emitting ring quantum cascade lasers for chemical sensing

    Science.gov (United States)

    Szedlak, Rolf; Hayden, Jakob; Martín-Mateos, Pedro; Holzbauer, Martin; Harrer, Andreas; Schwarz, Benedikt; Hinkov, Borislav; MacFarland, Donald; Zederbauer, Tobias; Detz, Hermann; Andrews, Aaron Maxwell; Schrenk, Werner; Acedo, Pablo; Lendl, Bernhard; Strasser, Gottfried

    2018-01-01

    We review recent advances in chemical sensing applications based on surface emitting ring quantum cascade lasers (QCLs). Such lasers can be implemented in monolithically integrated on-chip laser/detector devices forming compact gas sensors, which are based on direct absorption spectroscopy according to the Beer-Lambert law. Furthermore, we present experimental results on radio frequency modulation up to 150 MHz of surface emitting ring QCLs. This technique provides detailed insight into the modulation characteristics of such lasers. The gained knowledge facilitates the utilization of ring QCLs in combination with spectroscopic techniques, such as heterodyne phase-sensitive dispersion spectroscopy for gas detection and analysis.

  4. Efficient Second Harmonic Generation in 3D Nonlinear Optical-Lattice-Like Cladding Waveguide Splitters by Femtosecond Laser Inscription.

    Science.gov (United States)

    Nie, Weijie; Jia, Yuechen; Vázquez de Aldana, Javier R; Chen, Feng

    2016-02-29

    Integrated photonic devices with beam splitting function are intriguing for a broad range of photonic applications. Through optical-lattice-like cladding waveguide structures fabricated by direct femtosecond laser writing, the light propagation can be engineered via the track-confined refractive index profiles, achieving tailored output beam distributions. In this work, we report on the fabrication of 3D laser-written optical-lattice-like structures in a nonlinear KTP crystal to implement 1 × 4 beam splitting. Second harmonic generation (SHG) of green light through these nonlinear waveguide beam splitter structures provides the capability for the compact visible laser emitting devices. With Type II phase matching of the fundamental wavelength (@ 1064 nm) to second harmonic waves (@ 532 nm), the frequency doubling has been achieved through this three-dimensional beam splitter. Under 1064-nm continuous-wave fundamental-wavelength pump beam, guided-wave SHG at 532 nm are measured with the maximum power of 0.65 mW and 0.48 mW for waveguide splitters (0.67 mW and 0.51 mW for corresponding straight channel waveguides), corresponding to a SH conversion efficiency of approximately ~14.3%/W and 13.9%/W (11.2%/W, 11.3%/W for corresponding straight channel waveguides), respectively. This work paves a way to fabricate compact integrated nonlinear photonic devices in a single chip with beam dividing functions.

  5. Low loss depressed cladding waveguide inscribed in YAG:Nd single crystal by femtosecond laser pulses.

    Science.gov (United States)

    Okhrimchuk, Andrey; Mezentsev, Vladimir; Shestakov, Alexander; Bennion, Ian

    2012-02-13

    A depressed cladding waveguide with record low loss of 0.12 dB/cm is inscribed in YAG:Nd(0.3at.%) crystal by femtosecond laser pulses with an elliptical beam waist. The waveguide is formed by a set of parallel tracks which constitute the depressed cladding. It is a key element for compact and efficient CW waveguide laser operating at 1064 nm and pumped by a multimode laser diode. Special attention is paid to mechanical stress resulting from the inscription process. Numerical calculation of mode distribution and propagation loss with the elasto-optical effect taken into account leads to the conclusion that the depressed cladding is a dominating factor in waveguide mode formation, while the mechanical stress only slightly distorts waveguide modes.

  6. Polarization of eigenmodes in laser diode waveguides on semipolar and nonpolar GaN

    Energy Technology Data Exchange (ETDEWEB)

    Rass, Jens; Vogt, Patrick [Institute of Solid State Physics, Technische Universitaet Berlin (Germany); Wernicke, Tim; Einfeldt, Sven; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Scheibenzuber, Wolfgang G.; Schwarz, Ulrich T. [Department of Physics, Regensburg University (Germany); Kupec, Jan [Integrated Systems Laboratory, ETH Zurich (Switzerland); Witzigmann, Bernd [Computational Electronics and Photonics Group, University of Kassel (Germany); Kneissl, Michael [Institute of Solid State Physics, Technische Universitaet Berlin (Germany); Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany)

    2010-02-15

    Recent calculations of the eigenmodes in waveguides grown on semipolar GaN suggest that the optical polarization of the emitted light as well as the optical gain depends on the orientation of the resonator. Our measurements on separate confinement heterostructures on semipolar (11 anti 22) and (10 anti 12) GaN show that for laser resonators along the semipolar [11 anti 2 anti 3 ] and [0 anti 111] directions (i.e. the projection of the c-axis onto the plane of growth) the threshold for amplified spontaneous emission is lower than for the nonpolar direction and that the stimulated emission is linearly polarized as TE mode. For the waveguide structures along the nonpolar [1 anti 100] or [11 anti 20] direction on the other hand, birefringence and anisotropy of the optical gain in the plane of growth leads not only to a higher threshold but also to a rotation of the optical polarization which is not any more TE- or TM-polarized but influenced by the ordinary and extraordinary refractive index of the material. We observe stimulated emission into a mode which is linearly polarized in extraordinarydirection nearly parallel to the c-axis. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Hybrid Coupling of Laser Light sources to Silicon (Oxy)Nitride Based Waveguides

    NARCIS (Netherlands)

    Krijger, A.J.T. de; Bekman, H.H.P.T.

    1997-01-01

    An efficient method was developed to couple a diode laser to a high contrast waveguides. The laserdiodes were mounted with sub-micron precision using a thermocompression mounting technique. An AlGaAs (λ = 850 nm) laserdiode was coupled to a SiON based slab waveguide (efficiency η EQ 25 - 30%) and to

  8. Bragg Grating Waveguide Array Ultrafast Laser Inscribed into the Cladding of a Flat Fiber

    Directory of Open Access Journals (Sweden)

    Beecher Stephen J.

    2013-11-01

    Full Text Available We report the fabrication and initial characterization of a waveguide sensor array in the cladding of a flat fiber. The sensor, designed to independently measure the strain on three Bragg grating waveguides, exploits the true three dimensional fabrication technology of ultrafast laser inscription by placing these gratings in a non-planar configuration.

  9. Light propagation studies on laser modified waveguides using scanning near-field optical microscopy

    DEFF Research Database (Denmark)

    Borrise, X.; Berini, Abadal Gabriel; Jimenez, D.

    2001-01-01

    By means of direct laser writing on Al, a new method to locally modify optical waveguides is proposed. This technique has been applied to silicon nitride waveguides, allowing modifications of the optical propagation along the guide. To study the formed structures, a scanning near-held optical mic...

  10. Cladding-like waveguide fabricated by cooperation of ultrafast laser writing and ion irradiation: characterization and laser generation.

    Science.gov (United States)

    Lv, Jinman; Shang, Zhen; Tan, Yang; Vázquez de Aldana, Javier Rodríguez; Chen, Feng

    2017-08-07

    We report the surface cladding-like waveguide fabricated by the cooperation of the ultrafast laser writing and the ion irradiation. The ultrafast laser writes tracks near the surface of the Nd:YAG crystal, constructing a semi-circle columnar structure with a decreased refractive index of - 0.00208. Then, the Nd:YAG crystal is irradiated by the Carbon ion beam, forming an enhanced-well in the semi-circle columnar with an increased refractive index of + 0.0024. Tracks and the enhanced-well consisted a surface cladding-like waveguide. Utilizing this cladding-like waveguide as the gain medium for the waveguide lasing, optimized characterizations were observed compared with the monolayer waveguide. This work demonstrates the refractive index of the Nd:YAG crystal can be well tailored by the cooperation of the ultrafast laser writing and the ion irradiation, which provides an convenient way to fabricate the complex and multilayered photonics devices.

  11. Optical study of planar waveguides based on oxidized porous silicon impregnated with laser dyes

    Energy Technology Data Exchange (ETDEWEB)

    Chouket, A. [Unite de recherche de Spectroscopie Raman, Departement de Physique, Faculte des Sciences de Tunis, Elmanar 2092, Tunis (Tunisia); Charrier, J. [Laboratoire d' Optronique CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT-6 rue de Kerampont, BP 80518, 22305 Lannion Cedex (France); Elhouichet, H. [Unite de recherche de Spectroscopie Raman, Departement de Physique, Faculte des Sciences de Tunis, Elmanar 2092, Tunis (Tunisia)], E-mail: habib.elhouichet@fst.rnu.tn; Oueslati, M. [Unite de recherche de Spectroscopie Raman, Departement de Physique, Faculte des Sciences de Tunis, Elmanar 2092, Tunis (Tunisia)

    2009-05-15

    Oxidized porous silicon optical planar waveguides were elaborated and impregnated with rhodamine B and rhodamine 6G. The waveguiding, absorption, and photoluminescence properties of these impregnated waveguides were studied. Successful impregnation of the structure with laser dyes is shown from photoluminescence and reflectivity measurements. Furthermore, the reflectivity spectra prove the homogenous incorporation of both dye molecules inside the pores of the matrices. The refractive indices of waveguide layers were determined before and after dye impregnation to indicate the conservation of guiding conditions. The optical losses in the visible wavelengths are studied as a function of dye concentration. The dye absorption is the main reason for these losses.

  12. Transverse Writing of Multimode Interference Waveguides inside Silica Glass by Femtosecond Laser Pulses

    International Nuclear Information System (INIS)

    Da-Yong, Liu; Yan, Li; Yan-Ping, Dou; Heng-Chang, Guo; Hong, Yang; Qi-Huang, Gong

    2008-01-01

    Multi-mode interference waveguides are fabricated inside silica glass by transverse writing geometry with femtosecond laser pulses. The influences of several writing and reading factors on the output mode are systematically studied. The experimental results of straight waveguides are in good agreement with the simulations by the beam propagation method. By integrating a straight waveguide with a bent waveguide, a 1 × 2 multi-mode splitter is formed and 2 × 3 lobes are observed in the output mode. (fundamental areas of phenomenology (including applications))

  13. Hollow core waveguide as mid-infrared laser modal beam filter

    Energy Technology Data Exchange (ETDEWEB)

    Patimisco, P.; Giglio, M.; Spagnolo, V. [Dipartimento Interateneo di Fisica, Università e Politecnico di Bari, CNR-IFN UOS BARI, Via Amendola 173, 70126 Bari (Italy); Sampaolo, A. [Dipartimento Interateneo di Fisica, Università e Politecnico di Bari, CNR-IFN UOS BARI, Via Amendola 173, 70126 Bari (Italy); Department of Electrical and Computer Engineering, Rice University, 6100 Main Street, Houston, Texas 77005 (United States); Kriesel, J. M. [Opto-Knowledge Systems, Inc. (OKSI), 19805 Hamilton Ave., Torrance, California 90502-1341 (United States); Tittel, F. K. [Department of Electrical and Computer Engineering, Rice University, 6100 Main Street, Houston, Texas 77005 (United States)

    2015-09-21

    A novel method for mid-IR laser beam mode cleaning employing hollow core waveguide as a modal filter element is reported. The influence of the input laser beam quality on fiber optical losses and output beam profile using a hollow core waveguide with 200 μm-bore size was investigated. Our results demonstrate that even when using a laser with a poor spatial profile, there will exist a minimum fiber length that allows transmission of only the Gaussian-like fundamental waveguide mode from the fiber, filtering out all the higher order modes. This essentially single mode output is preserved also when the waveguide is bent to a radius of curvature of 7.5 cm, which demonstrates that laser mode filtering can be realized even if a curved light path is required.

  14. Q-switched pulse laser generation from double-cladding Nd:YAG ceramics waveguides.

    Science.gov (United States)

    Tan, Yang; Luan, Qingfang; Liu, Fengqin; Chen, Feng; Vázquez de Aldana, Javier Rodríguez

    2013-08-12

    This work reports on the Q-switched pulsed laser generation from double-cladding Nd:YAG ceramic waveguides. Double-cladding waveguides with different combination of diameters were inscribed into a sample of Nd:YAG ceramic. With an additional semiconductor saturable absorber, stable pulsed laser emission at the wavelength of 1064 nm was achieved with pulses of 21 ns temporal duration and ~14 μJ pulse energy at a repetition rate of 3.65 MHz.

  15. Stressed waveguides with tubular depressed-cladding inscribed in phosphate glasses by femtosecond hollow laser beams.

    Science.gov (United States)

    Long, Xuewen; Bai, Jing; Zhao, Wei; Stoian, Razvan; Hui, Rongqing; Cheng, Guanghua

    2012-08-01

    We report on the single-step fabrication of stressed optical waveguides with tubular depressed-refractive-index cladding in phosphate glasses by the use of focused femtosecond hollow laser beams. Tubelike low index regions appear under direct exposure due to material rarefaction following expansion. Strained compacted zones emerged in domains neighboring the tubular track of lower refractive index, and waveguiding occurs mainly within the tube core fabricated by the engineered femtosecond laser beam. The refractive index profile of the optical waveguide was reconstructed from the measured transmitted near-field intensity.

  16. Heat accumulation during high repetition rate ultrafast laser interaction: Waveguide writing in borosilicate glass

    International Nuclear Information System (INIS)

    Zhang, Haibin; Eaton, Shane M; Li, Jianzhao; Herman, Peter R

    2007-01-01

    During high repetition rate (>200 kHz) ultrafast laser waveguide writing, visible heat modified zones surrounding the formed waveguide occur as a result of heat accumulation. The radii of the heat-modified zones increase with the laser net fluence, and were found to correlate with the formation of low-loss and cylindrically symmetric optical waveguides. A numerical thermal model based on the finite difference method is applied here to account for cumulative heating and diffusion effects. The model successfully shows that heat propagation and accumulation accurately predict the radius of the 'heat modified' zones observed in borosilicate glass waveguides formed across a wide range of laser exposure conditions. Such modelling promises better control of thermal effects for optimizing the fabrication and performance of three-dimensional optical devices in transparent materials

  17. Perovskite Materials for Light-Emitting Diodes and Lasers.

    Science.gov (United States)

    Veldhuis, Sjoerd A; Boix, Pablo P; Yantara, Natalia; Li, Mingjie; Sum, Tze Chien; Mathews, Nripan; Mhaisalkar, Subodh G

    2016-08-01

    Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Inscription of type I and depressed cladding waveguides in lithium niobate using a femtosecond laser.

    Science.gov (United States)

    Bhardwaj, S; Mittholiya, K; Bhatnagar, A; Bernard, R; Dharmadhikari, J A; Mathur, D; Dharmadhikari, A K

    2017-07-10

    We describe two types of waveguides (type I and depressed cladding) inscribed in lithium niobate using a variable repetition rate (200 kHz-25 MHz), 270 fs duration fiber laser. The type I modification-based waveguides have propagation losses in the range from 1.2 to 10 dB/cm at 1550 nm, depending on experimental parameters. These waveguides are not permanent; they deteriorate over time. Such deterioration of waveguides can be slowed down from 30 days to 100 days by pre-annealing the samples and by writing at a 720 kHz laser repetition rate. The propagation losses measured at 1550 nm show significant improvement for pre-annealed samples. The depressed cladding-inscribed waveguides are permanent, but the propagation loss depends on the number of damage tracks. A track separation of ∼1  μm between adjacent damage tracks yields the lowest propagation loss of 0.5 dB/cm at 1550 nm for a 40 μm diameter waveguide. We observe multimode guidance for sizes in the range of 20-80 μm in these waveguide structures at 1550 nm. Their crystalline nature is found to remain intact, as inferred from second-harmonic generation within the waveguide region.

  19. Optical lattice-like cladding waveguides by direct laser writing: fabrication, luminescence, and lasing.

    Science.gov (United States)

    Nie, Weijie; He, Ruiyun; Cheng, Chen; Rocha, Uéslen; Rodríguez Vázquez de Aldana, Javier; Jaque, Daniel; Chen, Feng

    2016-05-15

    We report on the fabrication of optical lattice-like waveguide structures in an Nd:YAP laser crystal by using direct femtosecond laser writing. With periodically arrayed laser-induced tracks, the waveguiding cores can be located in either the regions between the neighbored tracks or the central zone surrounded by a number of tracks as outer cladding. The polarization of the femtosecond laser pulses for the inscription has been found to play a critical role in the anisotropic guiding behaviors of the structures. The confocal photoluminescence investigations reveal different stress-induced modifications of the structures inscribed by different polarization of the femtosecond laser beam, which are considered to be responsible for the refractive index changes of the structures. Under optical pump at 808 nm, efficient waveguide lasing at ∼1  μm wavelength has been realized from the optical lattice-like structure, which exhibits potential applications as novel miniature light sources.

  20. Beam shaping of laser diode radiation by waveguides with arbitrary cladding geometry written with fs-laser radiation.

    Science.gov (United States)

    Beckmann, Dennis; Schnitzler, Daniel; Schaefer, Dagmar; Gottmann, Jens; Kelbassa, Ingomar

    2011-12-05

    Waveguides with arbitrary cross sections are written in the volume of Al(2)O(3)-crystals using tightly focused femtosecond laser radiation. Utilizing a scanning system with large numerical aperture, complex cladding geometries are realized with a precision around 0.5 µm and a scanning speed up to 100 mm/s. Individual beam and mode shaping of laser diode radiation is demonstrated by varying the design of the waveguide cladding. The influence of the writing parameters on the waveguide properties are investigated resulting in a numerical aperture of the waveguides in the range of 0.1. This direct laser writing technique enables optical devices which could possibly replace bulky beam shaping setups with an integrated solution.

  1. A microwave FEL [free electron laser] code using waveguide modes

    International Nuclear Information System (INIS)

    Byers, J.A.; Cohen, R.H.

    1987-08-01

    A free electron laser code, GFEL, is being developed for application to the LLNL tokamak current drive experiment, MTX. This single frequency code solves for the slowly varying complex field amplitude using the usual wiggler-averaged equations of existing codes, in particular FRED, except that it describes the fields by a 2D expansion in the rectangular waveguide modes, using coupling coefficients similar to those developed by Wurtele, which include effects of spatial variations in the fields seen by the wiggler motion of the particles. Our coefficients differ from those of Wurtele in two respects. First, we have found a missing √2γ/a/sub w/ factor in his C/sub z/; when corrected this increases the effect of the E/sub z/ field component and this in turn reduces the amplitude of the TM mode. Second, we have consistently retained all terms of second order in the wiggle amplitude. Both corrections are necessary for accurate computation. GFEL has the capability of following the TE/sub 0n/ and TE(M)/sub m1/ modes simultaneously. GFEL produces results nearly identical to those from FRED if the coupling coefficients are adjusted to equal those implied by the algorithm in FRED. Normally, the two codes produce results that are similar but different in detail due to the different treatment of modes higher than TE/sub 01/. 5 refs., 2 figs., 1 tab

  2. Vertical-cavity surface-emitting lasers for medical diagnosis

    DEFF Research Database (Denmark)

    Ansbæk, Thor

    This thesis deals with the design and fabrication of tunable Vertical-Cavity Surface-Emitting Lasers (VCSELs). The focus has been the application of tunable VCSELs in medical diagnostics, specifically OCT. VCSELs are candidates as light sources for swept-source OCT where their high sweep rate, wide...

  3. UV laser-induced high resolution cleaving of Si wafers for micro-nano devices and polymeric waveguide characterization

    International Nuclear Information System (INIS)

    Casquel, R.; Holgado, M.; Garcia-Ballesteros, J.J.; Zinoviev, K.; Fernandez-Sanchez, C.; Sanza, F.J.; Molpeceres, C.; Laguna, M.F.; Llobera, A.; Ocana, J.L.; Dominguez, C.

    2011-01-01

    In this work we propose a method for cleaving silicon-based photonic chips by using a laser based micromachining system, consisting of a ND:YVO 4 laser emitting at 355 nm in nanosecond pulse regime and a micropositioning system. The laser makes grooved marks placed at the desired locations and directions where cleaves have to be initiated, and after several processing steps, a crack appears and propagate along the crystallographic planes of the silicon wafer. This allows cleavage of the chips automatically and with high positioning accuracy, and provides polished vertical facets with better quality than the obtained with other cleaving process, which eases the optical characterization of photonic devices. This method has been found to be particularly useful when cleaving small-sized chips, where manual cleaving is hard to perform; and also for polymeric waveguides, whose facets get damaged or even destroyed with polishing or manual cleaving processing. Influence of length of the grooved line and speed of processing is studied for a variety of silicon chips. An application for cleaving and characterizing sol-gel waveguides is presented. The total amount of light coupled is higher than when using any other procedure.

  4. UV laser-induced high resolution cleaving of Si wafers for micro-nano devices and polymeric waveguide characterization

    Energy Technology Data Exchange (ETDEWEB)

    Casquel, R., E-mail: rafael.casquel@upm.es [Centro Laser UPM, Universidad Politecnica de Madrid, Campus Sur UPM, 28031 Madrid (Spain); Holgado, M.; Garcia-Ballesteros, J.J. [Centro Laser UPM, Universidad Politecnica de Madrid, Campus Sur UPM, 28031 Madrid (Spain); Zinoviev, K.; Fernandez-Sanchez, C. [Instituto de Microelectronica de Barcelona, Centro Nacional de Microelectronica - CSIC, Campus Universidad Autonoma de Barcelona, 08193 Bellaterra, Barcelona (Spain); Sanza, F.J.; Molpeceres, C.; Laguna, M.F. [Centro Laser UPM, Universidad Politecnica de Madrid, Campus Sur UPM, 28031 Madrid (Spain); Llobera, A. [Instituto de Microelectronica de Barcelona, Centro Nacional de Microelectronica - CSIC, Campus Universidad Autonoma de Barcelona, 08193 Bellaterra, Barcelona (Spain); Ocana, J.L. [Centro Laser UPM, Universidad Politecnica de Madrid, Campus Sur UPM, 28031 Madrid (Spain); Dominguez, C. [Instituto de Microelectronica de Barcelona, Centro Nacional de Microelectronica - CSIC, Campus Universidad Autonoma de Barcelona, 08193 Bellaterra, Barcelona (Spain)

    2011-04-01

    In this work we propose a method for cleaving silicon-based photonic chips by using a laser based micromachining system, consisting of a ND:YVO{sub 4} laser emitting at 355 nm in nanosecond pulse regime and a micropositioning system. The laser makes grooved marks placed at the desired locations and directions where cleaves have to be initiated, and after several processing steps, a crack appears and propagate along the crystallographic planes of the silicon wafer. This allows cleavage of the chips automatically and with high positioning accuracy, and provides polished vertical facets with better quality than the obtained with other cleaving process, which eases the optical characterization of photonic devices. This method has been found to be particularly useful when cleaving small-sized chips, where manual cleaving is hard to perform; and also for polymeric waveguides, whose facets get damaged or even destroyed with polishing or manual cleaving processing. Influence of length of the grooved line and speed of processing is studied for a variety of silicon chips. An application for cleaving and characterizing sol-gel waveguides is presented. The total amount of light coupled is higher than when using any other procedure.

  5. Selection of transverse modes in laser cavities containing waveguides and open parts

    International Nuclear Information System (INIS)

    Gurin, O V; Degtyarev, A V; Maslov, Vyacheslav A; Svich, V A; Tkachenko, V M; Topkov, A N

    2001-01-01

    The transverse modes of a submillimetre laser cavity that contains waveguides and open parts were studied theoretically and experimentally with the purpose of finding methods for mode selection. Two methods based on the filtering of the Fourier spectra of the waveguide modes and the use of their interference were substantiated numerically and realised in experiment. Special attention was paid to the mode selection in tunable lasers. Scaling laws allowing one to use the obtained results in a wide range of the cavity parameters and wavelengths are presented. (laser applications and other topics in quantum electronics)

  6. Femtosecond-laser inscribed double-cladding waveguides in Nd:YAG crystal: a promising prototype for integrated lasers.

    Science.gov (United States)

    Liu, Hongliang; Chen, Feng; Vázquez de Aldana, Javier R; Jaque, D

    2013-09-01

    We report on the design and implementation of a prototype of optical waveguides fabricated in Nd:YAG crystals by using femtosecond-laser irradiation. In this prototype, two concentric tubular structures with nearly circular cross sections of different diameters have been inscribed in the Nd:YAG crystals, generating double-cladding waveguides. Under 808 nm optical pumping, waveguide lasers have been realized in the double-cladding structures. Compared with single-cladding waveguides, the concentric tubular structures, benefiting from the large pump area of the outermost cladding, possess both superior laser performance and nearly single-mode beam profile in the inner cladding. Double-cladding waveguides of the same size were fabricated and coated by a thin optical film, and a maximum output power of 384 mW and a slope efficiency of 46.1% were obtained. Since the large diameters of the outer claddings are comparable with those of the optical fibers, this prototype paves a way to construct an integrated single-mode laser system with a direct fiber-waveguide configuration.

  7. Dramatic enhancement of XUV laser output using a multi-mode, gas-filled capillary waveguide

    Czech Academy of Sciences Publication Activity Database

    Mocek, Tomáš; McKenna, C.M.; Cros, B.; Sebban, S.; Spence, D.J.; Maynard, G.; Bettaibi, I.; Vorontsov, V.; Gonsavles, A.J.; Hooker, S.M.

    2005-01-01

    Roč. 71, 01 (2005), 013804/1-013804/5 ISSN 1050-2947 Grant - others:EU(XE) HPRI-1999-CT-00086; EU(XE) HPMF-CT-2002-01554 Institutional research plan: CEZ:AV0Z10100523 Keywords : waveguiding * x-ray laser Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.997, year: 2005

  8. On-chip microparticle detection and sizing using a dual-wavelength waveguide laser

    NARCIS (Netherlands)

    Bernhardi, Edward H.; van der Werf, Kees O; Hollink, Anton J F; Worhoff, Kerstin; De Ridder, Rene M.; Subramaniam, Vinod; Pollnau, Markus

    2013-01-01

    An integrated intra-laser-cavity microparticle sensor based on a dual-phase-shift, dual-wavelength distributed-feedback channel waveguide laser in Al2O3:Yb3+ is presented. Real-time detection and accurate size measurement of single microparticles with diameters ranging between 1 μm and 20 μm are

  9. On-chip microparticle detection and sizing using a dual-wavelength waveguide laser

    NARCIS (Netherlands)

    Bernhardi, Edward; van der Werf, Kees; Hollink, Anton; Worhoff, Kerstin; de Ridder, R.M.; Subramaniam, Vinod; Pollnau, Markus

    An integrated intra-laser-cavity microparticle sensor based on a dual-phase-shift, dual-wavelength distributed-feedback channel waveguide laser in ytterbium-doped aluminium oxide is presented. Single micro-particles with diameters ranging between 1 μm and 20 μm are detected.

  10. Integration of a terahertz quantum cascade laser with a hollow waveguide

    Science.gov (United States)

    Wanke, Michael C [Albuquerque, NM; Nordquist, Christopher D [Albuquerque, NM

    2012-07-03

    The present invention is directed to the integration of a quantum cascade laser with a hollow waveguide on a chip to improve both the beam pattern and manufacturability. By coupling the QCL output into a single-mode rectangular waveguide the radiation mode structure can be known and the propagation, manipulation, and broadcast of the QCL radiation can then be entirely controlled by well-established rectangular waveguide techniques. By controlling the impedance of the interface, enhanced functions, such as creating amplifiers, efficient coupling to external cavities, and increasing power output from metal-metal THz QCLs, are also enabled.

  11. Optical Cladding Waveguides in Dielectric Crystals Produced by Femtosecond Laser Inscription

    Directory of Open Access Journals (Sweden)

    Chen Feng

    2013-11-01

    Full Text Available In this work, the recent progress of our research on optical cladding waveguides in dielectric crystals produced by femtosecond laser inscription has been overviewed. With different scales at cross sections, the cladding waveguides support guidance from single mode to highly multi-modes, and work for wavelength till mid-infrared regimes. Applications of the fabricated cladding structures as new integrated light sources are introduced.

  12. Efficient laser emission from cladding waveguide inscribed in Nd:GdVO(4) crystal by direct femtosecond laser writing.

    Science.gov (United States)

    Liu, Hongliang; Tan, Yang; Vázquez de Aldana, Javier R; Chen, Feng

    2014-08-01

    We report on the fabrication of depressed cladding waveguides in Nd:GdVO(4) laser crystal by using femtosecond laser inscription. The cross section of the structure is a circular shape with a diameter of 150 μm. Under the optical pump at 808 nm, the continuous wave (cw) as well as pulsed (Q-switched by graphene saturable absorber) waveguide lasing at 1064 nm has been realized, supporting guidance of both TE and TM polarizations. The maximum output power of 0.57 W was obtained in the cw regime, while the maximum pulse energy of the pulsed laser emissions was up to 19 nJ (corresponding to a maximum average output power of 0.33 W, at a resonant frequency of 18 MHz). The slope efficiencies achieved for the cw and pulsed Nd:GdVO(4) waveguide lasers were as high as 68% and 52%, respectively.

  13. Emerging applications for vertical cavity surface emitting lasers

    International Nuclear Information System (INIS)

    Harris, J S; O'sullivan, T; Sarmiento, T; Lee, M M; Vo, S

    2011-01-01

    Vertical cavity surface emitting lasers (VCSELs) emitting at 850 nm have experienced explosive growth in the past decade because of their many attractive optical features and incredibly low-cost manufacturability. This review reviews the foundations for GaAs-based VCSEL technology as well as the materials and device challenges to extend the operating wavelength to both shorter and longer wavelengths. We discuss some of the applications that are enabled by the integration of VCSELs with both active and passive semiconductor elements for telecommunications, both in vivo and in vitro biosensing, high-density optical storage and imaging at wavelengths much less than the diffraction limit of light

  14. Astigmatism-free high-brightness 1060 nm edge-emitting lasers with narrow circular beam profile.

    Science.gov (United States)

    Miah, Md Jarez; Kalosha, Vladimir P; Bimberg, Dieter; Pohl, Johannes; Weyers, Markus

    2016-12-26

    1060 nm high-brightness vertical broad-area edge-emitting lasers providing anastigmatic high optical power into a narrow circular beam profile are demonstrated. Ridge-waveguide (RW) lasers yield record 2.2 W single-transverse mode power in the 1060-nm wavelength range under continuous-wave (cw) operation at room temperature with excellent beam quality factor M2 ≤ 2. Independent of operating current the astigmatism is only 2.5 µm. 3 mm long broad-area (BA) lasers produce a θvert as narrow as 9° full width at half maximum, which agrees well with our simulation results, being insensitive to drive current. 5 mm long BA lasers deliver highest ever reported cw 12 W multimode output power among lasers showing θvert <10° in the 1060-nm wavelength range. The emitted laser beams from both RW and BA lasers show a perfect circular shape with ≤10° divergence angle at record 2.1 W and 4.2 W cw-mode output power, respectively.

  15. Diffusion-cooled high-power single-mode waveguide CO2 laser for transmyocardial revascularization

    Science.gov (United States)

    Berishvili, I. I.; Bockeria, L. A.; Egorov, E. N.; Golubev, Vladimir S.; Galushkin, Michail G.; Kheliminsky, A. A.; Panchenko, Vladislav Y.; Roshin, A. P.; Sigaev, I. Y.; Vachromeeva, M. N.; Vasiltsov, Victor V.; Yoshina, V. I.; Zabelin, Alexandre M.; Zelenov, Evgenii V.

    1999-01-01

    The paper presents the results on investigations and development of multichannel waveguide CO2 laser with diffusion cooling of active medium excited by discharge of audio-frequency alternating current. The description of high-power single-mode CO2 laser with average beam power up to 1 kW is presented. The result of measurement of the laser basic parameters are offered, as well as the outcomes of performances of the laser head with long active zone, operating in waveguide mode. As an example of application of these laser, various capabilities a description of the developed medical system 'Genom' used in the transmyocardial laser revascularization (TMLR) procedure and clinical results of the possibilities of the TMLR in the surgical treatment are presented.

  16. Specific features of waveguide recombination in laser structures with asymmetric barrier layers

    Energy Technology Data Exchange (ETDEWEB)

    Polubavkina, Yu. S., E-mail: polubavkina@mail.ru; Zubov, F. I.; Moiseev, E. I.; Kryzhanovskaya, N. V.; Maximov, M. V. [Russian Academy of Sciences, St. Petersburg National Research Academic University (Russian Federation); Semenova, E. S.; Yvind, K. [Technical University of Denmark, DTU Fotonik (Denmark); Asryan, L. V. [Virginia Polytechnic Institute and State University (United States); Zhukov, A. E. [Russian Academy of Sciences, St. Petersburg National Research Academic University (Russian Federation)

    2017-02-15

    The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm{sup 2}) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical microscopy. It is found that the waveguide luminescence in such a laser, which is on the whole less intense as compared to that observed in a similar laser without asymmetric barriers, is non-uniformly distributed in the waveguide, so that the distribution maximum is shifted closer to the p-type cladding layer. This can be attributed to the ability of the GaInP barrier adjoining the quantum well on the side of the n-type cladding layer to suppress the hole transport.

  17. Specific features of waveguide recombination in laser structures with asymmetric barrier layers

    DEFF Research Database (Denmark)

    Polubavkina, Yu; Zubov, F. I.; Moiseev, E.

    2017-01-01

    microscopy. It is found that the waveguide luminescence in such a laser, which is on the whole less intense as compared to that observed in a similar laser without asymmetric barriers, is non-uniformly distributed in the waveguide, so that the distribution maximum is shifted closer to the p-type cladding......The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm2) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical...... layer. This can be attributed to the ability of the GaInP barrier adjoining the quantum well on the side of the n-type cladding layer to suppress the hole transport....

  18. Femtosecond laser-written double line waveguides in germanate and tellurite glasses

    Science.gov (United States)

    S. da Silva, Diego; Wetter, Niklaus U.; de Rossi, Wagner; Samad, Ricardo E.; Kassab, Luciana R. P.

    2018-02-01

    The authors report the fabrication and characterization of passive waveguides in GeO2-PbO and TeO2-ZnO glasses written with a femtosecond laser delivering pulses with 3μJ, 30μJ and 80fs at 4kHz repetition rate. Permanent refractive index change at the focus of the laser beam was obtained and waveguides were formed by two closely spaced laser written lines, where the light guiding occurs between them. The refractive index change at 632 nm is around 10-4 . The value of the propagation losses was around 2.0 dB/cm. The output mode profiles indicate multimodal guiding behavior. Raman measurements show structural modification of the glassy network. The results show that these materials are potential candidates for passive waveguides applications as low-loss optical components.

  19. Coherent beam combination of fiber lasers with a strongly confined waveguide: numerical model.

    Science.gov (United States)

    Tao, Rumao; Si, Lei; Ma, Yanxing; Zhou, Pu; Liu, Zejin

    2012-08-20

    Self-imaging properties of fiber lasers in a strongly confined waveguide (SCW) and their application in coherent beam combination (CBC) are studied theoretically. Analytical formulas are derived for the positions, amplitudes, and phases of the N images at the end of an SCW, which is important for quantitative analysis of waveguide CBC. The formulas are verified with experimental results and numerical simulation of a finite difference beam propagation method (BPM). The error of our analytical formulas is less than 6%, which can be reduced to less than 1.5% with Goos-Hahnchen penetration depth considered. Based on the theoretical model and BPM, we studied the combination of two laser beams based on an SCW. The effects of the waveguide refractive index and Gaussian beam waist are studied. We also simulated the CBC of nine and 16 fiber lasers, and a single beam without side lobes was achieved.

  20. Production and characterization of femtosecond laser-written double line waveguides in heavy metal oxide glasses

    Science.gov (United States)

    da Silva, Diego Silvério; Wetter, Niklaus Ursus; de Rossi, Wagner; Kassab, Luciana Reyes Pires; Samad, Ricardo Elgul

    2018-01-01

    We report the fabrication and characterization of double line waveguides directly written in tellurite and germanate glasses using a femtosecond laser delivering 30 μJ, 80 fs pulses at 4 kHz repetition rate. The double line waveguides produced presented internal losses inferior to 2.0 dB/cm. The output mode profile and the M2 measurements indicate multimodal guiding behavior. A better beam quality for the GeO2 - PbO waveguide was observed when compared with TeO2 - ZnO glass. Raman spectroscopy of the waveguides showed structural modification of the glassy network and indicates that a negative refractive index modification occurs at the focus of the laser beam, therefore allowing for light guiding in between two closely spaced laser written lines. The refractive index change at 632 nm is around 10-4, and the structural changes in the laser focal region of the writing, evaluated by Raman spectroscopy, corroborated our findings that these materials are potential candidates for optical waveguides and passive components. To the best of our knowledge, the two double line configuration demonstrated in the present work was not reported before for germanate or tellurite glasses.

  1. Propagation of a laser beam in a time-varying waveguide. [plasma heating for controlled fusion

    Science.gov (United States)

    Chapman, J. M.; Kevorkian, J.

    1978-01-01

    The propagation of an axisymmetric laser beam in a plasma column having a radially parabolic electron density distribution is reported. For the case of an axially uniform waveguide it is found that the basic characteristics of alternating focusing and defocusing beams are maintained. However, the intensity distribution is changed at the foci and outer-beam regions. The features of paraxial beam propagation are discussed with reference to axially varying waveguides. Laser plasma coupling is considered noting the case where laser heating produces a density distribution radially parabolic near the axis and the energy absorbed over the focal length of the plasma is small. It is found that: (1) beam-propagation stability is governed by the relative magnitude of the density fluctuations existing in the axial variation of the waveguides due to laser heating, and (2) for beam propagation in a time-varying waveguide, the global instability of the propagation is a function of the initial fluctuation growth rate as compared to the initial time rate of change in the radial curvature of the waveguide.

  2. Propagation of a laser beam in a time-varying waveguide

    International Nuclear Information System (INIS)

    Chapman, J.M.; Kevorkian, J.

    1978-01-01

    The propagation of an axisymmetric laser beam in a plasma column having a radially parabolic electron density distribution is examined. First, an extended paraxial procedure is developed for the case of an axially uniform waveguide. It is shown that the essential feature of an alternate focusing and defocusing beam is retained, but that the intensity distribution is cumulatively modified at the foci and at the outer portions of the beam as compared to that of the paraxial case. Second, some general features of paraxial beam propagation are examined for the case of axially varying waveguides. Finally, laser plasma coupling is examined for the case when laser heating generates a density distribution that is radially parabolic near the axis and when the energy absorbed over a focal length of a plasma lens is small. It is shown that stable or unstable beam propagation depends upon the relative magnitude of the density fluctuations which exist in the axial variation of the waveguides as a result of laser heating. When the fluctuations are small, the propagation is stable, and a simple algebraic expression is obtained which relates the beam diameter to the axially slow averaged variation in the waveguide. When the fluctuations are large, the propagation stability can be determined only by consistently combining plasma dynamics and beam propagation to interrelate the axial variation of the beam to that of the waveguide. In this case of beam propagation in a time-varying waveguide, it is shown that the global stability of the propagation depends upon the initial fluctuation growth rate compared to the initial time rate of change in the radial curvature of the waveguide

  3. Development of a high power HCN waveguide laser for plasma diagnostic

    International Nuclear Information System (INIS)

    Deng Zhongchao; Zhou Yan; Tang Yiwu; Yi Jiang; Gao Bingyi; Tian Chongli

    2007-06-01

    Both design and development of a high power cw HCN waveguide laser is described for multichannel FIR laser interferometer on the HL-2A divertor tokamak. The geometry parameters of stracture of the HCN laser are calculated according to scaling laws for cw 337 μm HCN waveguide laser offered by P. Belland et al. The designed value of output power of the laser that is more than 400 mW with discharge length of 5.6 m and 6.3 cm inner diameter of tube have been chosen in case of external loss of the cavity of 2%. At the same time, in order to get a laser system of stable output both of configuration and operating condition is discussed. In developed laser a hot LaB 6 cathode is employed to en- sure a stable discharge, the cavity mirrors are spaced using four invar rod of φ25 mm in diameter and an structure of adjusting machine for axially movable flat mirror in cavity has been also designed, and that it can be taken down many times without badly destroying alignment of the cavity etc.. A suit of pipes sys- tem of cw HCN laser is schemed out so that some experiments of operating parameter optimization can be done. The results of primary test of operating waveguide HCN laser are briefly showed. (authors)

  4. Low-Loss Hollow Waveguide Fibers for Mid-Infrared Quantum Cascade Laser Sensing Applications

    Directory of Open Access Journals (Sweden)

    James A. Harrington

    2013-01-01

    Full Text Available We report on single mode optical transmission of hollow core glass waveguides (HWG coupled with an external cavity mid-IR quantum cascade lasers (QCLs. The QCL mode results perfectly matched to the hybrid HE11 waveguide mode and the higher losses TE-like modes have efficiently suppressed by the deposited inner dielectric coating. Optical losses down to 0.44 dB/m and output beam divergence of ~5 mrad were measured. Using a HGW fiber with internal core size of 300 µm we obtained single mode laser transmission at 10.54 µm and successful employed it in a quartz enhanced photoacoustic gas sensor setup.

  5. UV waveguides light fabricated in fluoropolymer CYTOP by femtosecond laser direct writing.

    Science.gov (United States)

    Hanada, Yasutaka; Sugioka, Koji; Midorikawa, Katsumi

    2010-01-18

    We have fabricated optical waveguides inside the UV-transparent polymer, CYTOP, by femtosecond laser direct writing for propagating UV light in biochip applications. Femtosecond laser irradiation is estimated to increase the refractive index of CYTOP by 1.7 x 10(-3) due to partial bond breaking in CYTOP. The waveguide in CYTOP has propagation losses of 0.49, 0.77, and 0.91 dB/cm at wavelengths of 632.8, 355, and 266 nm, respectively.

  6. On Surface Losses in Direct Metal Laser Sintering Printed Millimeter and Submillimeter Waveguides

    Science.gov (United States)

    Holmberg, Max; Dancila, Dragos; Rydberg, Anders; Hjörvarsson, Björgvin; Jansson, Ulf; Marattukalam, Jithin James; Johansson, Niklas; Andersson, Joakim

    2018-06-01

    Different lengths of WR3 (220-330 GHz) and WR10 (75-110 GHz) waveguides are fabricated through direct metal laser sintering (DMLS). The losses in these waveguides are measured and modelled using the Huray surface roughness model. The losses in WR3 are around 0.3 dB/mm and in WR10 0.05 dB/mm. The Huray equation model is accounting relatively good for the attenuation in the WR10 waveguide but deviates more in the WR3 waveguide. The model is compared to finite element simulations of the losses assuming an approximate surface structure similar to the resulting one from the DMLS process.

  7. Laterally injected light-emitting diode and laser diode

    Science.gov (United States)

    Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

    2015-06-16

    A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

  8. High-modulation-efficiency, integrated waveguide modulator-laser diode at 448 nm

    KAUST Repository

    Shen, Chao; Ng, Tien Khee; Leonard, John T.; Pourhashemi, Arash; Oubei, Hassan M.; Alias, Mohd Sharizal; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.; Alyamani, Ahmed Y.; Eldesouki, Munir M.; Ooi, Boon S.

    2016-01-01

    To date, solid-state lighting (SSL), visible light communication (VLC) and optical clock generation functionalities in the blue-green color regime have been demonstrated based on discrete devices, including light-emitting diodes, laser diodes, and transverse-transmission modulators. This work presents the first integrated waveguide modulator-laser diode (IWM-LD) at 448 nm, offering the advantages of small-footprint, high-speed, and low power-consumption. A high modulation efficiency of 2.68 dB/V, deriving from a large extinction ratio of 9.4 dB and a low operating voltage range of 3.5 V, was measured. The electroabsorption characteristics revealed that the modulation effect, as observed from the red-shifting of the absorption edge, was resulted from the external-field-induced quantum-confined-Stark-effect (QCSE). A comparative analysis of the photocurrent versus wavelength spectra in semipolar- and polar-plane InGaN/GaN quantum wells (QWs) confirmed that the IWM-LD based on semipolar (20¯2 ¯1) QWs was able to operate in a manner similar to other III-V materials typically used in optical telecommunications, due to the reduced piezoelectric field. Utilizing the integrated modulator, a -3dB bandwidth of ~1 GHz was measured, and a data rate of 1 Gbit/s was demonstrated using on-off keying (OOK) modulation. Our experimental investigation highlighted the advantage of implementing the IWM-LD on the same semipolar QW epitaxy in enabling a high-efficiency platform for SSL-VLC dual-functionalities.

  9. High-modulation-efficiency, integrated waveguide modulator-laser diode at 448 nm

    KAUST Repository

    Shen, Chao

    2016-01-25

    To date, solid-state lighting (SSL), visible light communication (VLC) and optical clock generation functionalities in the blue-green color regime have been demonstrated based on discrete devices, including light-emitting diodes, laser diodes, and transverse-transmission modulators. This work presents the first integrated waveguide modulator-laser diode (IWM-LD) at 448 nm, offering the advantages of small-footprint, high-speed, and low power-consumption. A high modulation efficiency of 2.68 dB/V, deriving from a large extinction ratio of 9.4 dB and a low operating voltage range of 3.5 V, was measured. The electroabsorption characteristics revealed that the modulation effect, as observed from the red-shifting of the absorption edge, was resulted from the external-field-induced quantum-confined-Stark-effect (QCSE). A comparative analysis of the photocurrent versus wavelength spectra in semipolar- and polar-plane InGaN/GaN quantum wells (QWs) confirmed that the IWM-LD based on semipolar (20¯2 ¯1) QWs was able to operate in a manner similar to other III-V materials typically used in optical telecommunications, due to the reduced piezoelectric field. Utilizing the integrated modulator, a -3dB bandwidth of ~1 GHz was measured, and a data rate of 1 Gbit/s was demonstrated using on-off keying (OOK) modulation. Our experimental investigation highlighted the advantage of implementing the IWM-LD on the same semipolar QW epitaxy in enabling a high-efficiency platform for SSL-VLC dual-functionalities.

  10. Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system

    KAUST Repository

    Shen, Chao

    2017-02-28

    A high-performance waveguide photodetector (WPD) integrated with a laser diode (LD) sharing the single InGaN/GaN quantum well active region is demonstrated on a semipolar GaN substrate. The photocurrent of the integrated WPD is effectively tuned by the emitted optical power from the LD. The responsivity ranges from 0.018 to 0.051 A/W with increasing reverse bias from 0 to 10 V. The WPD shows a large 3 dB modulation bandwidth of 230 MHz. The integrated device, being used for power monitoring and on-chip communication, paves the way towards the eventual realization of a III–nitride on-chip photonic system.

  11. Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system

    KAUST Repository

    Shen, Chao; Lee, Changmin; Stegenburgs, Edgars; Lerma, Jorge Holguin; Ng, Tien Khee; Nakamura, Shuji; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

    2017-01-01

    A high-performance waveguide photodetector (WPD) integrated with a laser diode (LD) sharing the single InGaN/GaN quantum well active region is demonstrated on a semipolar GaN substrate. The photocurrent of the integrated WPD is effectively tuned by the emitted optical power from the LD. The responsivity ranges from 0.018 to 0.051 A/W with increasing reverse bias from 0 to 10 V. The WPD shows a large 3 dB modulation bandwidth of 230 MHz. The integrated device, being used for power monitoring and on-chip communication, paves the way towards the eventual realization of a III–nitride on-chip photonic system.

  12. Absorption Spectroscopy in Hollow-Glass Waveguides Using Infrared Diode Lasers[4817-25

    International Nuclear Information System (INIS)

    Blake, Thomas A.; Kelly, James F.; Stewart, Timothy L.; Hartman, John S.; Sharpe, Steven W.; Sams, Robert L.; Alan Fried

    2002-01-01

    Near- and mid-infrared diode lasers combined with flexible, hollow waveguides hold the promise of light weight, field portable, fast response gas sensors. The advantages of using the waveguides compared to White or Herriott multireflection cells include a small gas volume, a high photon fill factor in the waveguide, which increases molecule-light interactions, and reduction or elimination of optical fringing, which usually sets the practical limit of detectivity in absorption spectroscopy. Though hollow waveguides have been commercially available for several years, relatively few results have been reported in the literature. We present here results from our laboratory where we have injected infrared laser light into straight and coiled lengths of hollow waveguides and performed direct and wavelength modulated absorption spectroscopy on nitrous oxide, ethylene, and nitric oxide. Using a 1 mm bore, 3 meter long coiled waveguide coated for the near infrared, nitrous oxide transitions near 6595 cm-1 were observed under flowing conditions. Signal-to-noise ratios on the order of 1500:1 with RMS noise equal to 2 X 10-5 were measured. In the mid-infrared light from either a 10.1 or 5.3 micron lead salt diode laser was injected into a three meter length of 1 mm bore hollow waveguide coated for the mid-infrared. The waveguide was coiled with one loop at a diameter of 52 cm. Ethylene transitions were observed in the vicinity of 985 cm-1 with a static fill of 0.2 Torr of pure ethylene in the waveguide and nitric oxide transitions were observed in the vicinity of 1906 cm-1 using either a flow or a static fill of 1 ppm NO in nitrogen. In direct absorption the NO transitions are observed to have a signal-to-noise of approximately 5:1 for transitions with absorbances on the order of 10-3. Using wavelength modulated techniques the signal-to-noise ratio improves at least an order of magnitude. These encouraging results indicate that waveguides can be used for in situ gas monitoring

  13. Integration of Quantum Cascade Lasers and Passive Waveguides

    Science.gov (United States)

    2015-06-01

    convenience, we can de - fine an effective mirror loss eαmLA = R referenced to the active region such that αm = ln(R) LA . This definition al- lows us to...the waveguide loss. The current density threshold de - pendence in a QCL may be expressed in terms of a mirror loss αm and waveguide loss αw as in Jth...M. Licht - ensteiger, C. Gatos, and H. Gatos, J. Appl. Phys. 51, 2659 (1980). 15O. Kim and W. Bonner, J. Electron. Mater. 12, 827 (1983). 16J

  14. Transparent organic light-emitting diodes with balanced white emission by minimizing waveguide and surface plasmonic loss.

    Science.gov (United States)

    Zhang, Yi-Bo; Ou, Qing-Dong; Li, Yan-Qing; Chen, Jing-De; Zhao, Xin-Dong; Wei, Jian; Xie, Zhong-Zhi; Tang, Jian-Xin

    2017-07-10

    It is challenging in realizing high-performance transparent organic light-emitting diodes (OLEDs) with symmetrical light emission to both sides. Herein, an efficient transparent OLED with highly balanced white emission to both sides is demonstrated by integrating quasi-periodic nanostructures into the organic emitter and the metal-dielectric composite top electrode, which can simultaneously suppressing waveguide and surface plasmonic loss. The power efficiency and external quantum efficiency are raised to 83.5 lm W -1 and 38.8%, respectively, along with a bi-directional luminance ratio of 1.26. The proposed scheme provides a facile route for extending application scope of transparent OLEDs for future transparent displays and lightings.

  15. Excitation of transversely excited CO2 waveguide lasers

    International Nuclear Information System (INIS)

    Wood II, O.R.; Smith, P.W.; Adams, C.R.; Maloney, P.J.

    1975-01-01

    Using a preionization scheme based on the Malter effect, small-signal gains >5%/cm at 10.6 μm have been produced in a 1-mm 2 -cross-section waveguide CO 2 amplifier at total operating pressures of 100--760 Torr. Comparisons are made between this preionization scheme and those using electron beams

  16. Optical spectroscopy in channel waveguides made in Nd:YAG crystals by femtosecond laser writing

    International Nuclear Information System (INIS)

    Torchia, G.A.; Mendez, C.; Roso, L.; Tocho, J.O.

    2008-01-01

    In this work, we present an optical characterization of channel waveguides fabricated by means of femtosecond laser writing on Nd:YAG substrates. These guiding structures show a refractive index increment of about 1x10 -3 which allows TE propagation. By pumping with a CW solid-state laser at 532 nm reaching the 2 G 9/2 and 4 G 7/2 manifolds of Nd 3+ ions, we have explored the emission band corresponding to 4 F 3/2 → 4 I 9/2 optical transitions (peaked at 890 nm). From data, we have found that emission showed similar characteristics for waveguide and bulk. On the other hand, the lifetime corresponding to the 4 F 3/2 metaestable level was determined to be 240 μs for bulk and waveguide. Summarizing, we have made suitable channel waveguides in Nd:YAG crystals, by fs interaction, with similar spectroscopic properties to those of the bulk, a fact that boosters the photonics application of these devices. For the first time to our knowledge, a direct index increment waveguide made by interaction with ultra-short intense pulses in YAG crystals has been performed. This fabrication procedure can be an efficient tool to make several optical circuits in active materials by means of the one-step, fast and low-cost processing

  17. Emission characteristics of laser and superluminescent diodes with a gradient-index waveguide

    Energy Technology Data Exchange (ETDEWEB)

    Bazarov, A.E.; Garmash, I.A.; Goldobin, I.S.; Eliukhin, V.A.; Pak, G.T.

    1987-05-01

    A study is made of the emission characteristics of laser and superluminescent diodes with gradient-index waveguides based on Al(x)Ga(1-x)As solid solutions, operating in the CW mode at room temperature. The coupling coefficients for a single-mode fiber are 25 and 18 percent for laser and superluminescent diodes, respectively, when an interface device consisting of three microlenses is used. 6 references.

  18. Laser acceleration in vacuum with an open iris-loaded waveguide

    International Nuclear Information System (INIS)

    Xie, Ming

    1997-05-01

    An open iris-loaded waveguide structure is considered for laser acceleration of highly relativistic particle in vacuum. Complete characterization of all eigenmodes are given in analytical form for the structure. In particular the dominant radially polarized TM mode is evaluated in detail for laser acceleration. The entire parameter space is searched and it is found that below the laser damage threshold of the structure an acceleration gradient around 1 GV/m can be obtained over a phase slippage length of 10s of cm with TWs laser in the wavelength range from 1 to 10 μm

  19. Blue laser diode (LD) and light emitting diode (LED) applications

    International Nuclear Information System (INIS)

    Bergh, Arpad A.

    2004-01-01

    The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography. As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc. Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity. Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Blue laser diode (LD) and light emitting diode (LED) applications

    Energy Technology Data Exchange (ETDEWEB)

    Bergh, Arpad A [Optoelectronics Industry Development Association (OIDA), 1133 Connecticut Avenue, NW, Suite 600, Washington, DC 20036-4329 (United States)

    2004-09-01

    The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography. As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc. Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity. Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Submonolayer Quantum Dots for High Speed Surface Emitting Lasers

    Directory of Open Access Journals (Sweden)

    Zakharov ND

    2007-01-01

    Full Text Available AbstractWe report on progress in growth and applications of submonolayer (SML quantum dots (QDs in high-speed vertical-cavity surface-emitting lasers (VCSELs. SML deposition enables controlled formation of high density QD arrays with good size and shape uniformity. Further increase in excitonic absorption and gain is possible with vertical stacking of SML QDs using ultrathin spacer layers. Vertically correlated, tilted or anticorrelated arrangements of the SML islands are realized and allow QD strain and wavefunction engineering. Respectively, both TE and TM polarizations of the luminescence can be achieved in the edge-emission using the same constituting materials. SML QDs provide ultrahigh modal gain, reduced temperature depletion and gain saturation effects when used in active media in laser diodes. Temperature robustness up to 100 °C for 0.98 μm range vertical-cavity surface-emitting lasers (VCSELs is realized in the continuous wave regime. An open eye 20 Gb/s operation with bit error rates better than 10−12has been achieved in a temperature range 25–85 °Cwithout current adjustment. Relaxation oscillations up to ∼30 GHz have been realized indicating feasibility of 40 Gb/s signal transmission.

  2. Creating large second-order optical nonlinearity in optical waveguides written by femtosecond laser pulses in boro-aluminosilicate glass

    Science.gov (United States)

    An, Hong-Lin; Arriola, Alexander; Gross, Simon; Fuerbach, Alexander; Withford, Michael J.; Fleming, Simon

    2014-01-01

    The thermal poling technique was applied to optical waveguides embedded in a commercial boro-aluminosilicate glass, resulting in high levels of induced second-order optical nonlinearity. The waveguides were fabricated using the femtosecond laser direct-write technique, and thermally poled samples were characterized with second harmonic optical microscopy to reveal the distribution profile of the induced nonlinearity. It was found that, in contrast to fused silica, the presence of waveguides in boro-aluminosilicate glass led to an enhancement of the creation of the second-order nonlinearity, which is larger in the laser written waveguiding regions when compared to the un-modified substrate. The magnitude of the nonlinear coefficient d33 achieved in the core of the laser-written waveguides, up to 0.2 pm/V, was comparable to that in thermally poled fused silica, enabling the realization of compact integrated electro-optic devices in boro-aluminosilicate glasses.

  3. Spontaneous emission and gain in a waveguide free-electron laser

    International Nuclear Information System (INIS)

    Golightly, W.J.; Ride, S.K.

    1991-01-01

    A free-electron laser enclosed in a waveguide of narrowly spaced parallel plates has been proposed as a compact, coherent source of far-infrared radiation. In this paper, the spontaneous emission and small-signal gain of such a device are analyzed. Maxwell's equations are solved for the fields of a relativistic electron beam passing through a linearly polarized undulator in the presence of a parallel-plane waveguide. The radiation intensity is resolved into its component waveguide modes for the fundamental frequency and for all harmonics. The intensity profile in a given harmonic mode is altered significantly when a parameter involving the undulator period, beam energy, and transverse dimension of the guide is such that the radiation group velocity is close to the electrons' axial velocity. The small-signal gain in the waveguide free-electron laser is calculated and related to the spontaneous emission. Near zero slip, the gain curve is significantly different from that of a free-space free-electron laser with the same parameters

  4. Yb:KYW planar waveguide laser Q-switched by evanescent-field interaction with carbon nanotubes

    NARCIS (Netherlands)

    Kim, Jun Wan; Choi, Sun Young; Yeom, Dong-Il; Aravazhi, S.; Pollnau, Markus; Griebner, Uwe; Petrov, Valentin; Rotermund, Fabian

    2013-01-01

    We report Q-switched operation of a planar waveguide laser by evanescent-field interaction with single-walled carbon nanotubes deposited on top of the waveguide. The saturable-absorber-integrated gain medium, which operates based on evanescent-field interaction, enables the realization of a

  5. Single-step fabrication of stressed waveguides with tubular depressed-cladding in phosphate glasses using ultrafast vortex laser beams

    Directory of Open Access Journals (Sweden)

    Cheng Guanghua

    2013-11-01

    Full Text Available We report on the fabrication of the stressed optical waveguide with tubular depressed-refractive-index cladding in phosphate glasses by use of femtosecond vortex beam. Strained regions were emerged in domains surrounding the tubular track. Waveguiding occurs mainly within the tube induced by femtosecond laser.

  6. Broadband single-transverse-mode fluorescence sources based on ribs fabricated in pulsed laser deposited Ti: sapphire waveguides

    NARCIS (Netherlands)

    Grivas, C.; May-Smith, T.C.; Shepherd, D.P.; Eason, R.W.; Pollnau, Markus; Jelinek, M.

    2004-01-01

    Active rib waveguides with depths and widths varying from 3 to 5 μm and from 9 to 24 μm, respectively, have been structured by $Ar^{+}$-beam etching in pulsed laser deposited Ti:sapphire layers. Losses in the channel structures were essentially at the same levels as the unstructured planar waveguide

  7. Direct acceleration of electrons by a CO2 laser in a curved plasma waveguide

    CERN Document Server

    Yi, Longqing; Shen, Baifei

    2016-01-01

    Laser plasma interaction with micro-engineered targets at relativistic intensities has been greatly promoted by recent progress in the high contrast lasers and the manufacture of advanced micro- and nano-structures. This opens new possibilities for the physics of laser-matter interaction. Here we propose a novel approach that leverages the advantages of high-pressure CO 2 laser, laser-waveguide interaction, as well as micro-engineered plasma structure to accelerate electrons to peak energy greater than 1 GeV with narrow slice energy spread (~1%) and high overall efficiency. The acceleration gradient is 26 GV/m for a 1.3 TW CO2 laser system. The micro-bunching of a long electron beam leads to the generation of a chain of ultrashort electron bunches with the duration roughly equal to half-laser-cycle. These results open a way for developing a compact and economic electron source for diverse applications.

  8. 11-GHz waveguide Nd:YAG laser CW mode-locked with single-layer graphene.

    Science.gov (United States)

    Okhrimchuk, Andrey G; Obraztsov, Petr A

    2015-06-08

    We report stable, passive, continuous-wave (CW) mode-locking of a compact diode-pumped waveguide Nd:YAG laser with a single-layer graphene saturable absorber. The depressed cladding waveguide in the Nd:YAG crystal is fabricated with an ultrafast laser inscription method. The saturable absorber is formed by direct deposition of CVD single-layer graphene on the output coupler. The few millimeter-long cavity provides generation of 16-ps pulses with repetition rates in the GHz range (up to 11.3 GHz) and 12 mW average power. Stable CW mode-locking operation is achieved by controlling the group delay dispersion in the laser cavity with a Gires-Tournois interferometer.

  9. Heuristic modelling of laser written mid-infrared LiNbO3 stressed-cladding waveguides.

    Science.gov (United States)

    Nguyen, Huu-Dat; Ródenas, Airán; Vázquez de Aldana, Javier R; Martínez, Javier; Chen, Feng; Aguiló, Magdalena; Pujol, Maria Cinta; Díaz, Francesc

    2016-04-04

    Mid-infrared lithium niobate cladding waveguides have great potential in low-loss on-chip non-linear optical instruments such as mid-infrared spectrometers and frequency converters, but their three-dimensional femtosecond-laser fabrication is currently not well understood due to the complex interplay between achievable depressed index values and the stress-optic refractive index changes arising as a function of both laser fabrication parameters, and cladding arrangement. Moreover, both the stress-field anisotropy and the asymmetric shape of low-index tracks yield highly birefringent waveguides not useful for most applications where controlling and manipulating the polarization state of a light beam is crucial. To achieve true high performance devices a fundamental understanding on how these waveguides behave and how they can be ultimately optimized is required. In this work we employ a heuristic modelling approach based on the use of standard optical characterization data along with standard computational numerical methods to obtain a satisfactory approximate solution to the problem of designing realistic laser-written circuit building-blocks, such as straight waveguides, bends and evanescent splitters. We infer basic waveguide design parameters such as the complex index of refraction of laser-written tracks at 3.68 µm mid-infrared wavelengths, as well as the cross-sectional stress-optic index maps, obtaining an overall waveguide simulation that closely matches the measured mid-infrared waveguide properties in terms of anisotropy, mode field distributions and propagation losses. We then explore experimentally feasible waveguide designs in the search of a single-mode low-loss behaviour for both ordinary and extraordinary polarizations. We evaluate the overall losses of s-bend components unveiling the expected radiation bend losses of this type of waveguides, and finally showcase a prototype design of a low-loss evanescent splitter. Developing a realistic waveguide

  10. Modeling of circular-grating surface-emitting lasers

    Science.gov (United States)

    Shams-Zadeh-Amiri, Ali M.

    Grating-coupled surface-emitting lasers became an area of growing interest due to their salient features. Emission from a broad area normal to the wafer surface, makes them very well suited in high power applications and two- dimensional laser arrays. These new possibilities have caused an interest in different geometries to fully develop their potential. Among them, circular-grating lasers have the additional advantage of producing a narrow beam with a circular cross section. This special feature makes them ideal for coupling to optical fibers. All existing theoretical models dealing with circular- grating lasers only consider first-order gratings, or second-order gratings, neglecting surface emission. In this thesis, the emphasis is to develop accurate models describing the laser performance by considering the radiation field. Toward this aim, and due to the importance of the radiation modes in surface-emitting structures, a theoretical study of these modes in multilayer planar structures has been done in a rigorous and systematic fashion. Problems like orthogonality of the radiation modes have been treated very accurately. We have considered the inner product of radiation modes using the distribution theory. Orthogonality of degenerate radiation modes is an important issue. We have examined its validity using the transfer matrix method. It has been shown that orthogonality of degenerate radiation modes in a very special case leads to the Brewster theorem. In addition, simple analytical formulas for the normalization of radiation modes have been derived. We have shown that radiation modes can be handled in a much easier way than has been thought before. A closed-form spectral dyadic Green's function formulation of multilayer planar structures has been developed. In this formulation, both rectangular and cylindrical structures can be treated within the same mathematical framework. The Hankel transform of some auxiliary functions defined on a circular aperture has

  11. Improved Laser performance through Planar Waveguide Technology Development

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose a laser technology development to improve efficiency and performance for a variety of science applications including: Lunar Ice, 2-Step Laser Tandem Mass...

  12. Laser Safety Evaluation of the MILES and Mini MILES Laser Emitting Components; TOPICAL

    International Nuclear Information System (INIS)

    AUGUSTONI, ARNOLD L.

    2002-01-01

    Laser safety evaluation and output emission measurements were performed (during October and November 2001) on SNL MILES and Mini MILES laser emitting components. The purpose, to verify that these components, not only meet the Class 1 (eye safe) laser hazard criteria of the CDRH Compliance Guide for Laser Products and 21 CFR 1040 Laser Product Performance Standard; but also meet the more stringent ANSI Std. z136.1-2000 Safe Use of Lasers conditions for Class 1 lasers that govern SNL laser operations. The results of these measurements confirmed that all of the Small Arms Laser Transmitters, as currently set (''as is''), meet the Class 1 criteria. Several of the Mini MILES Small Arms Transmitters did not. These were modified and re-tested and now meet the Class 1 laser hazard criteria. All but one System Controllers (hand held and rifle stock) met class 1 criteria for single trigger pulls and all presented Class 3a laser hazard levels if the trigger is held (continuous emission) for more than 5 seconds on a single point target. All units were Class 3a for ''aided'' viewing. These units were modified and re-tested and now meet the Class 1 hazard criteria for both ''aided'' as well as ''unaided'' viewing. All the Claymore Mine laser emitters tested are laser hazard Class 1 for both ''aided'' as well as ''unaided'' viewing

  13. Dynamics of a gain-switched distributed feedback ridge waveguide laser in nanoseconds time scale under very high current injection conditions.

    Science.gov (United States)

    Klehr, A; Wenzel, H; Brox, O; Schwertfeger, S; Staske, R; Erbert, G

    2013-02-11

    We present detailed experimental investigations of the temporal, spectral and spatial behavior of a gain-switched distributed feedback (DFB) laser emitting at a wavelength of 1064 nm. Gain-switching is achieved by injecting nearly rectangular shaped current pulses having a length of 50 ns and a very high amplitude up to 2.5 A. The repetition frequency is 200 kHz. The laser has a ridge waveguide (RW) for lateral waveguiding with a ridge width of 3 µm and a cavity length of 1.5 mm. Time resolved investigations show, depending on the amplitude of the current pulses, that the optical power exhibits different types of oscillatory behavior during the pulses, accompanied by changes in the lateral near field intensity profiles and optical spectra. Three different types of instabilities can be distinguished: mode beating with frequencies between 25 GHz and 30 GHz, switching between different lateral intensity profiles with a frequency of 0.4 GHz and self-sustained oscillations with a frequency of 4 GHz. The investigations are of great relevance for the utilization of gain-switched DFB-RW lasers as seed lasers for fiber laser systems and in other applications, which require a high optical power.

  14. Commercial mode-locked vertical external cavity surface emitting lasers

    Science.gov (United States)

    Head, C. Robin; Paboeuf, David; Ortega, Tiago; Lubeigt, Walter; Bialkowski, Bartlomiej; Lin, Jipeng; Hempler, Nils; Maker, Gareth T.; Malcolm, Graeme P. A.

    2018-02-01

    This paper presents the latest efforts in the development of commercial optically-pumped semiconductor disk lasers (SDLs) at M Squared Lasers. Two types of SDLs are currently being developed: an ultrafast system and a continuous wave single frequency system under the names of Dragonfly and Infinite, respectively. Both offer a compact, low-cost, easy-to-use and maintenance-free tool for a range of growing markets including nonlinear microscopy and quantum technology. To facilitate consumer uptake of the SDL technology, the performance specifications aim to closely match the currently employed systems. An extended Dragonfly system is being developed targeting the nonlinear microscopy market, which typically requires 1-W average power pulse trains with pulse durations below 200 fs. The pulse repetition frequency (PRF) of the commonly used laser systems, typically Titanium-sapphire lasers, is 80 MHz. This property is particularly challenging for mode-locked SDLs which tend to operate at GHz repetition rates, due to their short upper state carrier lifetime. Dragonfly has found a compromise at 200 MHz to balance mode-locking instabilities with a low PRF. In the ongoing development of Dragonfly, additional pulse compression and nonlinear spectral broadening stages are used to obtain pulse durations as short as 130 fs with an average power of 0.85 W, approaching the required performance. A variant of the Infinite system was adapted to provide a laser source suitable for the first stage of Sr atom cooling at 461 nm. Such a source requires average powers of approximately 1 W with a sub-MHz linewidth. As direct emission in the blue is not a viable approach at this stage, an SDL emitting at 922 nm followed by an M Squared Lasers SolTiS ECD-X doubler is currently under development. The SDL oscillator delivered >1 W of single frequency (RMS frequency noise <150kHz) light at 922 nm.

  15. Multilayer Slab Waveguide Distributed Feedback Dye Laser Sensors

    DEFF Research Database (Denmark)

    Vannahme, Christoph; Smith, Cameron; Leung, M.

    2013-01-01

    of DFB lasers. Here, we present a simple yet precise model for calculating the emission wavelength of multilayer DFB lasers. We ¯nd that experimental and calculated wavelength values are in compelling agreement for hybrid nanoimprinted Ormocomp-TiO2 (doped with Pyrromethene 597) ¯rst order DFB lasers [2...

  16. Ge22As20Se58 glass ultrafast laser inscribed waveguides for mid-IR integrated optics

    DEFF Research Database (Denmark)

    Morris, James M.; Mackenzie, Mark D.; Petersen, Christian Rosenberg

    2018-01-01

    Ultrafast laser inscription has been used to produce channel waveguides in Ge22As20Se58 glass (GASIR-1, Umicore N.V). The mode field diameter and waveguide losses at 2.94 mu m were measured along with the waveguide dispersion in the 1 to 4.5 mu m range, which is used to estimate the zero-dispersi...... ultrafast laser inscribed waveguide devices in GASIR-1 for mid-IR integrated optics applications. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License.......Ultrafast laser inscription has been used to produce channel waveguides in Ge22As20Se58 glass (GASIR-1, Umicore N.V). The mode field diameter and waveguide losses at 2.94 mu m were measured along with the waveguide dispersion in the 1 to 4.5 mu m range, which is used to estimate the zero......-dispersion wavelength. Z-scan measurements of bulk samples have also been performed to determine the nonlinear refractive index. Finally, midIR supercontinuum generation has been shown when pumping the waveguides with femtosecond pulses centered at 4.6 mu m. Supercontinuum spanning approximately 4 mu m from 2.5 to 6...

  17. 1.9 W continuous-wave single transverse mode emission from 1060 nm edge-emitting lasers with vertically extended lasing area

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M. J., E-mail: jarez.miah@tu-berlin.de; Posilovic, K.; Kalosha, V. P.; Rosales, R.; Bimberg, D. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Kettler, T. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); PBC Lasers GmbH, Hardenbergstr. 36, 10623 Berlin (Germany); Skoczowsky, D. [PBC Lasers GmbH, Hardenbergstr. 36, 10623 Berlin (Germany); Pohl, J.; Weyers, M. [Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2014-10-13

    High-brightness edge-emitting semiconductor lasers having a vertically extended waveguide structure emitting in the 1060 nm range are investigated. Ridge waveguide (RW) lasers with 9 μm stripe width and 2.64 mm cavity length yield highest to date single transverse mode output power for RW lasers in the 1060 nm range. The lasers provide 1.9 W single transverse mode optical power under continuous-wave (cw) operation with narrow beam divergences of 9° in lateral and 14° (full width at half maximum) in vertical direction. The beam quality factor M{sup 2} is less than 1.9 up to 1.9 W optical power. A maximum brightness of 72 MWcm{sup −2}sr{sup −1} is obtained. 100 μm wide and 3 mm long unpassivated broad area lasers provide more than 9 W optical power in cw operation.

  18. Selection of modes in transverse-mode waveguides for semiconductor lasers based on asymmetric heterostructures

    International Nuclear Information System (INIS)

    Slipchenko, S. O.; Bondarev, A. D.; Vinokurov, D. A.; Nikolaev, D. N.; Fetisova, N. V.; Sokolova, Z. N.; Pikhtin, N. A.; Tarasov, I. S.

    2009-01-01

    Asymmetric Al 0.3 Ga 0.7 As/GaAs/InGaAs heterostructures with a broadened waveguide produced by the method of MOCVD epitaxy are studied. It is established that the precision shift of the active region to one of the cladding layers ensures the generation of the chosen mode of high order in the transverse broadened waveguide. It is experimentally established that this shift brings about an increase in internal optical losses and a decrease in the internal quantum efficiency of stimulated emission. It is shown experimentally that the shift of the active region to the n-type cladding layer governs the sublinear form of the power-current characteristic for semiconductor lasers; in the case of a shift of the active region towards the p-type cladding layer, the laser diodes demonstrated a linear dependence of optical power on the pump current in the entire range of pump currents.

  19. Cascaded-focus laser writing of low-loss waveguides in polymers.

    Science.gov (United States)

    Pätzold, Welm M; Reinhardt, Carsten; Demircan, Ayhan; Morgner, Uwe

    2016-03-15

    Waveguide writing in poly (methyl methacrylate) (PMMA) with femtosecond laser radiation is presented. An adequate refractive index change is induced in the border area below the irradiated focal volume. It supports an almost symmetric fundamental mode with propagation losses down to 0.5  dB/cm, the lowest losses observed so far in this class of materials. The writing process with a cascaded focus is demonstrated to be highly reliable over a large parameter range.

  20. Characterization of femtosecond laser written waveguides for integrated biochemical sensing

    NARCIS (Netherlands)

    Dongre, C.; Dekker, R.; Hoekstra, Hugo; Nolli, D.; Martinez-Vazquez, R.; Osellame, R.; Laporta, P.; Cerullo, G.; Pollnau, Markus; Emplit, Ph.; Delqué, M.; Gorza, S.-P.; Kockaart, P.; Leijtens, X

    2007-01-01

    Fluorescence detection is known to be one of the most sensitive among the different optical sensing techniques. This work focuses on excitation and detection of fluorescence emitted by DNA strands labeled with fluorescent dye molecules that can be excited at a specific wavelength. Excitation occurs

  1. Propagation of highly aberrated laser beams in nonquadratic plasma waveguides

    International Nuclear Information System (INIS)

    Feit, M.D.; Fleck, J.A. Jr.; Morris, J.R.

    1977-01-01

    The propagation of a laser beam in a plasma column several meters long with a realistic electron density distribution is examined. The electron density distribution is based on laser-beam heating at z=0, but is otherwise uncoupled to the laser beam. The aberrated nature of the resulting lenslike medium leads to essentially aperiodic beam properties, which contrast with the completely periodic properties of Gaussian beams propagating in quadratic lenslike media. The beam is nonetheless stably trapped. These aberrated-beam properties also help to stabilize the beam against axial variations in refractive index

  2. Transverse-mode-selectable microlens vertical-cavity surface-emitting laser

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Debernardi, Pierluigi; Lee, Yong Tak

    2010-01-01

    A new vertical-cavity surface-emitting laser structure employing a thin microlens is suggested and numerically investigated. The laser can be made to emit in either a high-power Gaussian-shaped single-fundamental mode or a high-power doughnut-shaped higher-order mode. The physical origin...

  3. Modeling of mode-locked coupled-resonator optical waveguide lasers

    DEFF Research Database (Denmark)

    Agger, Christian; Skovgård, Troels Suhr; Gregersen, Niels

    2010-01-01

    Coupled-resonator optical waveguides made from coupled high-Q photonic crystal nanocavities are investigated for use as cavities in mode-locked lasers. Such devices show great potential in slowing down light and can serve to reduce the cavity length of a mode-locked laser. An explicit expression...... of the emerging pulse train. A range of tuning around this frequency allows for effective mode locking. Finally, noise is added to the generalized single-cavity eigenfrequencies in order to evaluate the effects of fabrication imperfections on the cold-cavity transmission properties and consequently on the locking...

  4. Waveguide formation by laser backwriting ablation of metals unto glass substrates

    International Nuclear Information System (INIS)

    Rangel-Rojo, R.; Castelo, A.; Flores-Arias, M. T.; Gomez-Reino, C.; Lopez-Gascon, C.; Fuente, G. F. de la

    2008-01-01

    In this work we present experimental results for the generation of channel waveguides by a laser backwriting technique using a nanosecond pulsed Nd:YAG laser working at 1064 nm. We present a characterization of the resulting refractive index profile, using the refracted near-field technique, together with a spatially resolved chemical analysis based on energy dispersive x-ray analysis(EDX). The EDX results confirm that metal ions are embedded in a region close to the substrate interface, up to about a 5 μm depth. We also present a discussion of the physical mechanisms that produce the profiles measured

  5. Waveguide formation by laser backwriting ablation of metals unto glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Rangel-Rojo, R [Departamento de Optica, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Apartado Postal 2732, Ensenada BC 22860 (Mexico); Castelo, A; Flores-Arias, M T; Gomez-Reino, C [GRIN Optics Group. Applied Physics Department, Escola Universitaria de Optica e Optometria, Universidad de Santiago de Compostela, Campus Sur s/n, E15782 Santiago de Compostela, Espana (Spain); Lopez-Gascon, C; Fuente, G F. de la [Instituto de Ciencia de Materiales de Aragon (U. Zaragoza-CSIC), Ma. de Luna 3, E50018 Zaragoza (Spain)

    2008-04-15

    In this work we present experimental results for the generation of channel waveguides by a laser backwriting technique using a nanosecond pulsed Nd:YAG laser working at 1064 nm. We present a characterization of the resulting refractive index profile, using the refracted near-field technique, together with a spatially resolved chemical analysis based on energy dispersive x-ray analysis(EDX). The EDX results confirm that metal ions are embedded in a region close to the substrate interface, up to about a 5 {mu}m depth. We also present a discussion of the physical mechanisms that produce the profiles measured.

  6. A Helical Undulator Wave-guide Inverse Free-Electron Laser

    International Nuclear Information System (INIS)

    Rosenzweig, J.; Bodzin, N.; Frigola, P.; Musumeci, P.; Pellegrini, C.; Travish, G.; Joshi, C.; Tochitsky, S.

    2004-01-01

    With recent success in high gradient, high-energy gain IFEL experiments at the UCLA Neptune Laboratory, future experiments are now being contemplated. The Neptune IFEL was designed to use a tightly focused, highly diffracting, near-TW peak power 10 micron laser. This choice of laser focusing, driven by power-handling limitations of the optics near the interaction region, led to design and use of a very complex undulator, and to sensitivity to both laser misalignment and focusing errors. As these effects limited the performance of the IFEL experiment, a next generation experiment at Neptune has been studied which avoids the use of a highly diffractive laser beam through use of a waveguide. We discuss here the choice of low-loss waveguide, guided mode characteristics and likely power limitations. We also examine a preferred undulator design, which is chosen to be helical in order to maximize the acceleration achieved for a given power. With the limitations of these laser and undulator choices in mind, we show the expected performance of the IFEL using 1D simulations. Three-dimensional effects are examined, in the context of use of a solenoid for focusing and acceleration enhancement

  7. MOVPE growth and characterization of (In,Ga)N quantum structures for laser diodes emitting at 440 nm

    Energy Technology Data Exchange (ETDEWEB)

    Hoffmann, Veit

    2011-04-18

    The presented work describes the metal organic vapor phase epitaxy and characterization of nitride-based quantum structures which are used in laser heterostructures emitting in the wavelength range between 400 nm and 440 nm. Aiming at current injection and optically pumped laser structures with low threshold current or respectively threshold power densities, the device properties were correlated with the material properties of the indium gallium nitride (InGaN) active region. Furthermore, the influence of the active region and waveguide heterostructure layout on the material gain as well as the modal gain was investigated. In order to understand the InGaN growth process and the formation of structural imperfections, 15 nm-100 nm thick InGaN single layers were deposited on gallium nitride (GaN) on sapphire substrates and analyzed subsequently. It turned out that the spiral pattern of the growth edges around screw dislocations, threading from the substrate to the growth surface, and the formation of additional V-shaped surface defects are the main cause for the deterioration of the crystal perfection of the InGaN. As a result of the transition from a layer-by-layer to a 3D growth regime stable facets with preferred indium incorporation are formed that increase the lateral variation of the indium mole fraction in the layer. The higher indium incorporation at the facets is explained by dynamical elasticity theory and proven by the growth and characterization of InGaN layers on differently oriented GaN. The material properties of the InGaN quantum wells were correlated with laser device properties using 400 nm laser structures: In the case of thin quantum wells the 3D growth results in a lateral variation of the band gap due to variations of the indium mole fraction and the well width. Systematical investigations of laser structures with different band gap fluctuations show an increase of the threshold power density as the lateral variation of the band gap increases. It

  8. Fiber-Type Random Laser Based on a Cylindrical Waveguide with a Disordered Cladding Layer.

    Science.gov (United States)

    Zhang, Wei Li; Zheng, Meng Ya; Ma, Rui; Gong, Chao Yang; Yang, Zhao Ji; Peng, Gang Ding; Rao, Yun Jiang

    2016-05-25

    This letter reports a fiber-type random laser (RL) which is made from a capillary coated with a disordered layer at its internal surface and filled with a gain (laser dye) solution in the core region. This fiber-type optical structure, with the disordered layer providing randomly scattered light into the gain region and the cylindrical waveguide providing confinement of light, assists the formation of random lasing modes and enables a flexible and efficient way of making random lasers. We found that the RL is sensitive to laser dye concentration in the core region and there exists a fine exponential relationship between the lasing intensity and particle concentration in the gain solution. The proposed structure could be a fine platform of realizing random lasing and random lasing based sensing.

  9. Control of waveguide properties by tuning femtosecond laser induced compositional changes

    International Nuclear Information System (INIS)

    Hoyo, Jesús; Fernandez, Toney Teddy del; Siegel, Jan; Solis, Javier; Vazquez, Rebeca Martinez; Osellame, Roberto; Sotillo, Belén; Fernández, Paloma

    2014-01-01

    Local compositional changes induced by high repetition rate fs-laser irradiation can be used to produce high performance optical waveguides in phosphate-based glasses. The waveguide refractive index contrast is determined by the local concentration of La, which can be changed by the action of the writing laser pulses. In this work, we have investigated the degree of control that can be exerted using this waveguide writing mechanism over the cross-section of the guiding region, and the local refractive index and compositional changes induced. These variables can be smoothly controlled via processing parameters using the slit shaping technique with moderate Numerical Aperture (NA 0.68) writing optics. The combined use of X-ray microanalysis and near field refractive index profilometry evidences a neat linear correlation between local La content and refractive index increase over a broad Δn interval (>3 × 10 −2 ). This result further confirms the feasibility of generating efficient, integrated optics elements via spatially selective modification of the glass composition.

  10. Control of waveguide properties by tuning femtosecond laser induced compositional changes

    Energy Technology Data Exchange (ETDEWEB)

    Hoyo, Jesús; Fernandez, Toney Teddy del; Siegel, Jan; Solis, Javier, E-mail: j.solis@io.cfmac.csic.es [Laser Processing Group, Instituto de Optica, CSIC, Serrano 121, 28006 Madrid (Spain); Vazquez, Rebeca Martinez; Osellame, Roberto [Instituto di Fotonica e Nanotecnologie, CNR, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Sotillo, Belén; Fernández, Paloma [Depto. de Física de Materiales, Facultad de Físicas, Univ. Complutense, 28040 Madrid (Spain)

    2014-09-29

    Local compositional changes induced by high repetition rate fs-laser irradiation can be used to produce high performance optical waveguides in phosphate-based glasses. The waveguide refractive index contrast is determined by the local concentration of La, which can be changed by the action of the writing laser pulses. In this work, we have investigated the degree of control that can be exerted using this waveguide writing mechanism over the cross-section of the guiding region, and the local refractive index and compositional changes induced. These variables can be smoothly controlled via processing parameters using the slit shaping technique with moderate Numerical Aperture (NA 0.68) writing optics. The combined use of X-ray microanalysis and near field refractive index profilometry evidences a neat linear correlation between local La content and refractive index increase over a broad Δn interval (>3 × 10{sup −2}). This result further confirms the feasibility of generating efficient, integrated optics elements via spatially selective modification of the glass composition.

  11. Multi-wavelength laser based on an arrayed waveguide grating and Sagnac loop reflectors monolithically integrated on InP

    NARCIS (Netherlands)

    Muñoz, P.; García-Olcina, R.; Doménech, J.D.; Rius, M.; Capmany, J.; Chen, L.R.; Habib, C.; Leijtens, X.J.M.; Vries, de T.; Heck, M.J.R.; Augustin, L.M.; Nötzel, R.; Robbins, D.J.

    2010-01-01

    In this paper, a multi-wavelength laser monolithically integrated on InP is presented. A linear laser cavity is built between two integrated Sagnac loop reflectors, with an Arrayed Waveguide Grating (AWG) as frequency selective device, and Semiconductor Optical Amplifiers (SOA) as gain sections. The

  12. Direct femtosecond laser writing of buried infrared waveguides in chalcogenide glasses

    Science.gov (United States)

    Le Coq, D.; Bychkov, E.; Masselin, P.

    2016-02-01

    Direct laser writing technique is now widely used in particular in glass, to produce both passive and active photonic devices. This technique offers a real scientific opportunity to generate three-dimensional optical components and since chalcogenide glasses possess transparency properties from the visible up to mid-infrared range, they are of great interest. Moreover, they also have high optical non-linearity and high photo-sensitivity that make easy the inscription of refractive index modification. The understanding of the fundamental and physical processes induced by the laser pulses is the key to well-control the laser writing and consequently to realize integrated photonic devices. In this paper, we will focus on two different ways allowing infrared buried waveguide to be obtained. The first part will be devoted to a very original writing process based on a helical translation of the sample through the laser beam. In the second part, we will report on another original method based on both a filamentation phenomenon and a point by point technique. Finally, we will demonstrate that these two writing techniques are suitable for the design of single mode waveguide for wavelength ranging from the visible up to the infrared but also to fabricate optical components.

  13. Single scan femtosecond laser transverse writing of depressed cladding waveguides enabled by three-dimensional focal field engineering.

    Science.gov (United States)

    Zhang, Qian; Yang, Dong; Qi, Jia; Cheng, Ya; Gong, Qihuang; Li, Yan

    2017-06-12

    We report single scan transverse writing of depressed cladding waveguides inside ZBLAN glass with the longitudinally oriented annular ring-shaped focal intensity distribution of the femtosecond laser. The entire region of depressed cladding at the cross section, where a negative change of refraction index is induced, can be modified simultaneously with the ring-shaped focal intensity profile. The fabricated waveguides exhibit good single guided mode.

  14. Waveguide embedded plasmon laser with multiplexing and electrical modulation

    Science.gov (United States)

    Ma, Ren-min; Zhang, Xiang

    2017-08-29

    This disclosure provides systems, methods, and apparatus related to nanometer scale lasers. In one aspect, a device includes a substrate, a line of metal disposed on the substrate, an insulating material disposed on the line of metal, and a line of semiconductor material disposed on the substrate and the insulating material. The line of semiconductor material overlaying the line of metal, disposed on the insulating material, forms a plasmonic cavity.

  15. Bright X-ray source from a laser-driven micro-plasma-waveguide

    CERN Document Server

    Yi, Longqing

    2016-01-01

    Bright tunable x-ray sources have a number of applications in basic science, medicine and industry. The most powerful sources are synchrotrons, where relativistic electrons are circling in giant storage rings. In parallel, compact laser-plasma x-ray sources are being developed. Owing to the rapid progress in laser technology, very high-contrast femtosecond laser pulses of relativistic intensities become available. These pulses allow for interaction with micro-structured solid-density plasma without destroying the structure by parasitic pre-pulses. The high-contrast laser pulses as well as the manufacturing of materials at micro- and nano-scales open a new realm of possibilities for laser interaction with photonic materials at the relativistic intensities. Here we demonstrate, via numerical simulations, that when coupling with a readily available 1.8 Joule laser, a micro-plasma-waveguide (MPW) may serve as a novel compact x-ray source. Electrons are extracted from the walls by the laser field and form a dense ...

  16. Laser-induced nonlinear crystalline waveguide on glass fiber format and diode-pumped second harmonic generation

    Science.gov (United States)

    Shi, Jindan; Feng, Xian

    2018-03-01

    We report a diode pumped self-frequency-doubled nonlinear crystalline waveguide on glass fiber. A ribbon fiber has been drawn on the glass composition of 50GeO2-25B2O3-25(La,Yb)2O3. Surface channel waveguides have been written on the surface of the ribbon fiber, using space-selective laser heating method with the assistance of a 244 nm CW UV laser. The Raman spectrum of the written area indicates that the waveguide is composed of structure-deformed nonlinear (La,Yb)BGeO5 crystal. The laser-induced surface wavy cracks have also been observed and the forming mechanism of the wavy cracks has been discussed. Efficient second harmonic generation has been observed from the laser-induced crystalline waveguide, using a 976 nm diode pump. 13 μW of 488 nm output has been observed from a 17 mm long waveguide with 26.0 mW of launched diode pump power, corresponding to a normalized conversion efficiency of 4.4%W-1.

  17. Tapered waveguide InGaAs/InGaAsP multiple-quantum-well lasers

    International Nuclear Information System (INIS)

    Koch, T.L.; Koren, U.; Eisentein, G.; Young, M.G.; Oron, M.; Giles, C.R.; Miller, B.I.

    1990-01-01

    The authors propose and demonstrate the application of ultra-thin etch-stop fabrication techniques to adiabatically expand the vertical optical mode size in 1.5 μm InGaAs/InGaAsP MQW lasers using a tapered-core passive intracavity waveguide structure. They achieve 30% differential quantum efficiency out the tapered facet, far-field FWHM of ∼ 12 degrees, and a butt-coupling efficiency into a cleaved fiber of - 4.2 dB, with - 1 dB alignment tolerances of ∼ ± 3 μM

  18. Modelling of a DBR laser based on Raman effect in a silicon-on-insulator rib waveguide

    International Nuclear Information System (INIS)

    De Leonardis, Francesco; Dimastrodonato, Valeria; Passaro, Vittorio M N

    2008-01-01

    In this paper, third-order nonlinearities in silicon-on-insulator rib waveguides are investigated to obtain complete modelling, describing the behaviour of a stimulated Raman scattering based laser. The simulations of a distributed Bragg reflector laser operation in a time domain allow for the first time to study in detail the dependence of threshold and output powers on different device parameters. Both continuous wave and pulsed laser operations are theoretically demonstrated, as well as their dependence on device parameters

  19. Erbium–ytterbium fibre laser emitting more than 13 W of power in ...

    Indian Academy of Sciences (India)

    2014-01-05

    ytterbium fibre laser emitting more than 13W of ... Proceedings of the International Workshop/Conference on Computational Condensed Matter Physics and Materials Science (IWCCMP-2015). Posted on November 27, 2015.

  20. Femtosecond laser direct writing of gratings and waveguides in high quantum efficiency erbium-doped Baccarat glass

    International Nuclear Information System (INIS)

    Vishnubhatla, K C; Kumar, R Sai Santosh; Rao, D Narayana; Rao, S Venugopal; Osellame, R; Ramponi, R; Bhaktha, S N B; Mattarelli, M; Montagna, M; Turrell, S; Chiappini, A; Chiasera, A; Ferrari, M; Righini, G C

    2009-01-01

    The femtosecond laser direct writing technique was employed to inscribe gratings and waveguides in high quantum efficiency erbium-doped Baccarat glass. Using the butt coupling technique, a systematic study of waveguide loss with respect to input pulse energy and writing speed was performed to achieve the best waveguide with low propagation loss (PL). By pumping at 980 nm, we observed signal enhancement in these active waveguides in the telecom spectral region. The refractive index change was smooth and we estimated it to be ∼10 -3 . The high quantum efficiency (∼80%) and a best PL of ∼0.9 dB cm -1 combined with signal enhancement makes Baccarat glass a potential candidate for application in photonics.

  1. High slope efficiency and high refractive index change in direct-written Yb-doped waveguide lasers with depressed claddings.

    Science.gov (United States)

    Palmer, Guido; Gross, Simon; Fuerbach, Alexander; Lancaster, David G; Withford, Michael J

    2013-07-15

    We report the first Yb:ZBLAN and Yb:IOG10 waveguide lasers fabricated by the fs-laser direct-writing technique. Pulses from a Titanium-Sapphire laser oscillator with 5.1 MHz repetition rate were utilized to generate negative refractive index modifications in both glasses. Multiple modifications were aligned in a depressed cladding geometry to create a waveguide. For Yb:ZBLAN we demonstrate high laser slope efficiency of 84% with a maximum output power of 170 mW. By using Yb:IOG10 a laser performance of 25% slope efficiency and 72 mW output power was achieved and we measured a remarkably high refractive index change exceeding Δn = 2.3 × 10(-2).

  2. 1.5  kW efficient CW Nd:YAG planar waveguide MOPA laser.

    Science.gov (United States)

    Wang, Juntao; Wu, Zhenhai; Su, Hua; Zhou, Tangjian; Lei, Jun; Lv, Wenqiang; He, Jing; Xu, Liu; Chen, Yuejian; Wang, Dan; Tong, Lixin; Hu, Hao; Gao, Qingsong; Tang, Chun

    2017-08-15

    In this Letter, we report a 1064 nm continuous wave Nd:YAG planar waveguide laser with an output power of 1544 W based on the structure of the master oscillator power amplification. A fiber laser is used as the master oscillator, and diode laser arrays are used as the pump source of the waveguide laser amplifier. The dimension of the waveguide is 1  mm (T)×10  mm (W)×60  mm (L), and the dual end oblique pumping is adopted with different angles. After a single-pass amplification, the power is scaled from 323 to 1544 W with the pump power of 2480 W, leading to an optical-to-optical efficiency of 49%. At the maximum output, the beam quality M 2 are measured to be 2.8 and 7.0 in the guided direction and the unguided direction, respectively. To the best of our knowledge, this is the highest output power of a Nd:YAG planar waveguide laser to date.

  3. Analysis of waveguide architectures of InGaN/GaN diode lasers by nearfield optical microscopy

    Science.gov (United States)

    Friede, Sebastian; Tomm, Jens W.; Kühn, Sergei; Hoffmann, Veit; Wenzel, Hans

    2017-02-01

    Waveguide (WG) architectures of 420-nm emitting InAlGaN/GaN diode lasers are analyzed by photoluminescence (PL) and photocurrent (PC) spectroscopy using a nearfield scanning optical microscope (NSOM) for excitation and detection. The measurements with a spatial resolution of 100 nm are implemented by scanning the fiber tip along the unprepared front facets of standard devices. PL is collected by the fiber tip, whereas PCs are extracted from the contacts that are anyway present for power supply. The mechanisms of signal generation are addressed in detail. The components of the `optical active region', multiple quantum wells (MQW), WGs, and cladding layers are separately inspected. Even separate analysis of p- and n-sections of the WG become possible. Defect levels are detected in the p-part of the WG. Their presence is consistent with the doping by Mg. An increased efficiency of carrier capture into InGaN/GaN WGs compared to GaN WGs is observed. Thus, beyond the improved optical confinement, the electrical confinement is improved, as well. NSOM PL and PC at GaN based devices do not reach the clarity and spatial resolution for WG mode analysis as seen before for GaAs based devices. This is due to higher modal absorption and higher WG losses. NSOM based optical analysis turns out to be an efficient tool for analysis of single layers grown into InAlGaN/GaN diode laser structures, even if this analysis is done at a packaged ready-to-work device.

  4. Laser performance and modeling of RE3+:YAG double-clad crystalline fiber waveguides

    Science.gov (United States)

    Li, Da; Lee, Huai-Chuan; Meissner, Stephanie K.; Meissner, Helmuth E.

    2018-02-01

    We report on laser performance of ceramic Yb:YAG and single crystal Tm:YAG double-clad crystalline fiber waveguide (CFW) lasers towards the goal of demonstrating the design and manufacturing strategy of scaling to high output power. The laser component is a double-clad CFW, with RE3+:YAG (RE = Yb, Tm respectively) core, un-doped YAG inner cladding, and ceramic spinel or sapphire outer cladding. Laser performance of the CFW has been demonstrated with 53.6% slope efficiency and 27.5-W stable output power at 1030-nm for Yb:YAG CFW, and 31.6% slope efficiency and 46.7-W stable output power at 2019-nm for Tm:YAG CFW, respectively. Adhesive-Free Bond (AFB®) technology enables a designable refractive index difference between core and inner cladding, and designable core and inner cladding sizes, which are essential for single transverse mode CFW propagation. To guide further development of CFW designs, we present thermal modeling, power scaling and design of single transverse mode operation of double-clad CFWs and redefine the single-mode operation criterion for the double-clad structure design. The power scaling modeling of double-clad CFW shows that in order to achieve the maximum possible output power limited by the physical properties, including diode brightness, thermal lens effect, and simulated Brillion scattering, the length of waveguide is in the range of 0.5 2 meters. The length of an individual CFW is limited by single crystal growth and doping uniformity to about 100 to 200 mm lengths, and also by availability of starting crystals and manufacturing complexity. To overcome the limitation of CFW lengths, end-to-end proximity-coupling of CFWs is introduced.

  5. TE modes of UV-laser generated waveguides in a planar polymer chip of parabolic refractive index profile

    Science.gov (United States)

    Shams El-Din, M. A.

    2018-04-01

    The UV-laser lithographic method is used for the preparation of Polymeric integrated-optical waveguides in a planar polymer chip. The waveguide samples are irradiated by an excimer laser of wavelength 248 nm with different doses and with the same fluencies. The refractive index depth profile for the waveguides, in the first zone is found to have a parabolic shape and Gaussian shape in the second one that can be determined by Mach-Zehnder interferometer. Both the mode field distribution and the effective mode indices for the first zone only are determined by making use of the theoretical mode and the experimental data. It is found that the model field distribution is strongly dependent on the refractive indices for each zone.

  6. Ultra-photo-stable coherent random laser based on liquid waveguide gain channels doped with boehmite nanosheets

    Science.gov (United States)

    Zhang, Hua; Zhang, Hong; Yang, Chao; Dai, Jiangyun; Yin, Jiajia; Xue, Hongyan; Feng, Guoying; Zhou, Shouhuan

    2018-02-01

    Construction of ultra-photo-stable coherent random laser based on liquid waveguide gain channels doped with boehmite nanosheets has been demonstrated. An Al plate uniformly coated with boehmite nanosheets was prepared by an alkali-treatment method and used as a scattering surface for the coherent random laser. Microcavity may be formed between these boehmite nanosheets owing to the strong optical feedback induced by the multiple light scattering. Many sharp peaks are observed in the emission spectra, and their laser thresholds are different, which confirms the feedback mechanism is coherent. The linewidth of the main peak at 571.74 nm is 0.28 nm, and the threshold of the main peak is about 4.96 mJ/cm2. Due to the fluidity of liquid waveguide gain medium, the photostability of this coherent random laser is better than the conventional solid state dye random lasers. The emission direction is well constrained by the waveguide effect within a certain angular range (±30°). This kind of coherent random laser can be applied in optical fluid lasers and photonic devices.

  7. Femtosecond laser writing of new type of waveguides in silver containing glasses (Conference Presentation)

    Science.gov (United States)

    Abou Khalil, Alain; Bérubé, Jean-Philippe; Danto, Sylvain; Desmoulin, Jean-Charles; Cardinal, Thierry; Petit, Yannick G.; Canioni, Lionel; Vallée, Réal

    2017-03-01

    Femtosecond laser writing in glasses is a growing field of research and development in photonics, since it provides a versatile, robust and efficient approach to directly address 3D material structuring. Laser-glass interaction process has been studied for many years, especially the local changes of the refractive index that have been classified by three distinct types (types I, II and III, respectively). These refractive index modifications are widely used for the creation of photonics devices such as waveguides [1], couplers, photonic crystals to fabricate integrated optical functions in glasses for photonic applications as optical circuits or integrated sensors. Femtosecond laser writing in a home-developed silver containing zinc phosphate glasses induces the creation of fluorescent silver clusters distributed around the laser-glass interaction voxel [2]. In this paper, we introduce a new type of refractive index modification in glasses. It is based on the creation of these photo-induced silver clusters allowing a local change in the refractive index Δn = 5×10-3, which is sufficient for the creation of waveguides and photonics devices. The wave guiding process in our glasses along these structures with original geometry is demonstrated for wavelengths from visible to NIR [3], giving a promising access to integrated optical circuits in these silver containing glasses. Moreover, the characterization of the waveguides is presented, including their original geometry, the refractive index change, the mode profile, the estimation of propagation losses and a comparison with simulation results. 1. K. M. Davis, K. Miura, N. Sugimoto, and K. Hirao, Opt. Lett. 21, 1729-1731 (1996). 2. M. Bellec, A. Royon, K. Bourhis, J. Choi, B. Bousquet, M. Treguer, T. Cardinal, J.-J. Videau, M. Richardson, and L. Canioni, The Journal of Physical Chemistry C 114, 15584-15588 (2010). 3. S. Danto, F. Désévédavy, Y. Petit, J.-C. Desmoulin, A. Abou Khalil, C. Strutynski, M. Dussauze, F

  8. Influence of the electric field frequency on the performance of a RF excited CO2 waveguide laser

    NARCIS (Netherlands)

    Ochkin, V.N.; Witteman, W.J.; Ilukhin, B.I.; Kochetov, I.V.; Peters, P.J.M.; Udalov, Yu.B.; Tskhai, S.N.

    1996-01-01

    An analysis is presented of the effect of the RF frequency on the active media of CO2 waveguide lasers. It is found that the characteristics are improved with increasing RF frequency because the space charge sheath width decreases with increasing excitation frequency. We also found that the sheath

  9. Competition of Faraday rotation and birefringence in femtosecond laser direct written waveguides in magneto-optical glass.

    Science.gov (United States)

    Liu, Qiang; Gross, S; Dekker, P; Withford, M J; Steel, M J

    2014-11-17

    We consider the process of Faraday rotation in femtosecond laser direct-write waveguides. The birefringence commonly associated with such waveguides may be expected to impact the observable Faraday rotation. Here, we theoretically calculate and experimentally verify the competition between Faraday rotation and birefringence in two waveguides created by laser writing in a commercial magneto-optic glass. The magnetic field applied to induce Faraday rotation is nonuniform, and as a result, we find that the two effects can be clearly separated and used to accurately determine even weak birefringence. The birefringence in the waveguides was determined to be on the scale of Δn = 10(-6) to 10(-5). The reduction in Faraday rotation caused by birefringence of order Δn = 10(-6) was moderate and we obtained approximately 9° rotation in an 11 mm waveguide. In contrast, for birefringence of order 10(-5), a significant reduction in the polarization azimuth change was found and only 6° rotation was observed.

  10. Ultrafast laser writing of optical waveguides in ceramic Yb:YAG: a study of thermal and non-thermal regimes

    Energy Technology Data Exchange (ETDEWEB)

    Benayas, A.; Jaque, D. [Universidad Autonoma de Madrid, Departamento de Fisica de Materiales, Madrid (Spain); Silva, W.F.; Jacinto, C. [Universidade Federal de Alagoas, Grupo de Fotonica e Fluidos Complexos, Instituto de Fisica, Maceio, Alagoas (Brazil); Rodenas, A.; Thomsom, R.R.; Psaila, N.D.; Reid, D.T.; Kar, A.K. [Heriot-Watt University, School of Engineering and Physical Sciences, Edinburgh (United Kingdom); Vazquez de Aldana, J. [Universidad de Salamanca, Grupo de Optica, Departamento de Fisica Aplicada, Facultad de Ciencias Fisicas, Salamanca (Spain); Chen, F.; Tan, Y. [Shandong University, School of Physics, Jinan (China); Torchia, G.A. [CONICET-CIC, Centro de Investigaciones Opticas, La Plata (Argentina)

    2011-07-15

    We report the improvement of ultrafast laser written optical waveguides in Yb:YAG ceramics by tailoring the presence of heat accumulation effects. From a combination of ytterbium micro-luminescence and micro-Raman structural analysis, maps of lattice defects and stress fields have been obtained. We show how laser annealing can strongly reduce the concentration of defects and also reduce compressive stress, leading to an effective 50% reduction in the propagation losses and to more extended and symmetric propagation modes. (orig.)

  11. Second Harmonic Generation of Violet Light in Femtosecond-Laser-Inscribed BiB3O6 Cladding Waveguides

    Directory of Open Access Journals (Sweden)

    Jia Yuechen

    2013-11-01

    Full Text Available We report on the second harmonic generation of violet light of a nonlinear cladding waveguide in BiB3O6 crystal produced by femtosecond laser inscription. Under continuous-wave pump laser at 800 nm, the guided second harmonic wave at 400 nm with a conversion efficiency of ~0.32% has been realized through the Type I birefringence phase matching configuration.

  12. Novel O-band tunable fiber laser using an array waveguide grating

    International Nuclear Information System (INIS)

    Ahmad, H; Zulkifli, M Z; Latif, A A; Harun, S W

    2010-01-01

    A novel tunable fibre laser (TFL) operating in the ordinary band (O-band) of 1310 nm is proposed and demonstrated. The proposed TFL is developed using a 1×16 arrayed waveguide grating (AWG) as a slicing mechanism for the broadband amplified spontaneous emission (ASE) source and an optical channel selector (OCS) to provide the tunability. A semiconductor optical amplifier (SOA) with a centre wavelength of 1310 nm serves as the compact gain medium for the TFL and also as a broadband ASE source. The TFL has a tuning range of 1301.26 nm to 1311.18 nm with 9.92 nm span and a channel spacing of 0.7 nm. The measured output power is about –4 and –8 dBm and with a side node suppression ratio (SMSR) of 29 to 33 dB

  13. Device geometry considerations for ridge waveguide quantum dot mode-locked lasers

    International Nuclear Information System (INIS)

    Mee, J K; Raghunathan, R; Lester, L F; Wright, J B

    2014-01-01

    Quantum dot mode-locked lasers have emerged as a leading source for the efficient generation of high-quality optical pulses from a compact package, attracting considerable attention for support of multiple high-speed applications, owing to characteristics such as low noise operation and high pulse peak power, in addition to the ability to multiplex the output pulse train in temporal and frequency domains in order to obtain hundreds of GHz pulse repetition rates potentially operating at 1 Tbps. This topical review provides a detailed explanation into the primary advantages of quantum dots, identifying the key features that have made them superior to other material systems for passive mode-locking in semiconductor lasers. Following this account, the impact of the device's cavity geometry on the operational range of two-section, monolithic passively mode-locked lasers is investigated both experimentally and analytically. A model is described that predicts regimes of pulsed operation as a function of absorber length to gain length ratio. Experimental measurements of the pulse time-domain characteristics over a wide range of operating temperatures are found to be in excellent agreement with analytical predictions. The impact of ridge waveguide design on the operational range is also examined and the key dimensions that most strongly impact efficient operation are identified. (topical review)

  14. Reducing Threshold of Multi Quantum Wells InGaN Laser Diode by Using InGaN/GaN Waveguide

    Science.gov (United States)

    Abdullah, Rafid A.; Ibrahim, Kamarulazizi

    2010-07-01

    ISE TCAD (Integrated System Engineering Technology Computer Aided Design) software simulation program has been utilized to help study the effect of using InGaN/GaN as a waveguide instead of conventional GaN waveguide for multi quantum wells violet InGaN laser diode (LD). Simulation results indicate that the threshold of the LD has been reduced by using InGaN/GaN waveguide where InGaN/GaN waveguide increases the optical confinement factor which leads to increase the confinement carriers at the active region of the LD.

  15. Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings

    Science.gov (United States)

    Papatryfonos, Konstantinos; Saladukha, Dzianis; Merghem, Kamel; Joshi, Siddharth; Lelarge, Francois; Bouchoule, Sophie; Kazazis, Dimitrios; Guilet, Stephane; Le Gratiet, Luc; Ochalski, Tomasz J.; Huyet, Guillaume; Martinez, Anthony; Ramdane, Abderrahim

    2017-02-01

    Single-mode diode lasers on an InP(001) substrate have been developed using InAs/In0.53Ga0.47As quantum dash (Qdash) active regions and etched lateral Bragg gratings. The lasers have been designed to operate at wavelengths near 2 μm and exhibit a threshold current of 65 mA for a 600 μm long cavity, and a room temperature continuous wave output power per facet >5 mW. Using our novel growth approach based on the low ternary In0.53Ga0.47As barriers, we also demonstrate ridge-waveguide lasers emitting up to 2.1 μm and underline the possibilities for further pushing the emission wavelength out towards longer wavelengths with this material system. By introducing experimentally the concept of high-duty-cycle lateral Bragg gratings, a side mode suppression ratio of >37 dB has been achieved, owing to an appreciably increased grating coupling coefficient of κ ˜ 40 cm-1. These laterally coupled distributed feedback (LC-DFB) lasers combine the advantage of high and well-controlled coupling coefficients achieved in conventional DFB lasers, with the regrowth-free fabrication process of lateral gratings, and exhibit substantially lower optical losses compared to the conventional metal-based LC-DFB lasers.

  16. Room-temperature subnanosecond waveguide lasers in Nd:YVO4 Q-switched by phase-change VO2: A comparison with 2D materials.

    Science.gov (United States)

    Nie, Weijie; Li, Rang; Cheng, Chen; Chen, Yanxue; Lu, Qingming; Romero, Carolina; Vázquez de Aldana, Javier R; Hao, Xiaotao; Chen, Feng

    2017-04-06

    We report on room-temperature subnanosecond waveguide laser operation at 1064 nm in a Nd:YVO 4 crystal waveguide through Q-switching of phase-change nanomaterial vanadium dioxide (VO 2 ). The unique feature of VO 2 nanomaterial from the insulating to metallic phases offers low-saturation-intensity nonlinear absorptions of light for subnanosecond pulse generation. The low-loss waveguide is fabricated by using the femtosecond laser writing with depressed cladding geometry. Under optical pump at 808 nm, efficient pulsed laser has been achieved in the Nd:YVO 4 waveguide, reaching minimum pulse duration of 690 ps and maximum output average power of 66.7 mW. To compare the Q-switched laser performances by VO 2 saturable absorber with those based on two-dimensional materials, the 1064-nm laser pulses have been realized in the same waveguide platform with either graphene or transition metal dichalcogenide (in this work, WS 2 ) coated mirror. The results on 2D material Q-switched waveguide lasers have shown that the shortest pulses are with 22-ns duration, whilst the maximum output average powers reach ~161.9 mW. This work shows the obvious difference on the lasing properties based on phase-change material and 2D materials, and suggests potential applications of VO 2 as low-cost saturable absorber for subnanosecond laser generation.

  17. Characteristics of the Single-Longitudinal-Mode Planar-Waveguide External Cavity Diode Laser at 1064 nm

    Science.gov (United States)

    Numata, Kenji; Alalusi, Mazin; Stolpner, Lew; Margaritis, Georgios; Camp, Jordan; Krainak, Michael

    2014-01-01

    We describe the characteristics of the planar-waveguide external cavity diode laser (PW-ECL). To the best of our knowledge, it is the first butterfly-packaged 1064 nm semiconductor laser that is stable enough to be locked to an external frequency reference. We evaluated its performance from the viewpoint of precision experiments. Using a hyperfine absorption line of iodine, we suppressed its frequency noise by a factor of up to 104 at 10 mHz. The PWECL's compactness and low cost make it a candidate to replace traditional Nd:YAG nonplanar ring oscillators and fiber lasers in applications that require a single longitudinal mode.

  18. 2 W high efficiency PbS mid-infrared surface emitting laser

    Science.gov (United States)

    Ishida, A.; Sugiyama, Y.; Isaji, Y.; Kodama, K.; Takano, Y.; Sakata, H.; Rahim, M.; Khiar, A.; Fill, M.; Felder, F.; Zogg, H.

    2011-09-01

    High efficiency laser operation with output power exceeding 2 W was obtained for vertical external-cavity PbS based IV-VI compound surface emitting quantum-well structures. The laser showed external quantum efficiency as high as 16%. Generally, mid-infrared III-V or II-VI semiconductor laser operation utilizing interband electron transitions are restricted by Auger recombination and free carrier absorption. Auger recombination is much lower in the IV-VI semiconductors, and the free-carrier absorption is significantly reduced by an optically pumped laser structure including multi-step optical excitation layers.

  19. Visible laser and superluminescent diode based free space and underwater communications

    KAUST Repository

    Ooi, Boon S.

    2017-01-30

    We report on our recent progress in high-modulation-efficiency, InGaN-based integrated waveguide modulator-laser diodes (IWM-LDs), high-speed violet and blue emitting superluminescent diodes (SLDs), InGaN-based vertical-cavity surface-emitting lasers (VCSELs), and their applications for gigahertz laser based free-space and underwater wireless optical communications.

  20. Visible laser and superluminescent diode based free space and underwater communications

    KAUST Repository

    Ooi, Boon S.

    2017-01-01

    We report on our recent progress in high-modulation-efficiency, InGaN-based integrated waveguide modulator-laser diodes (IWM-LDs), high-speed violet and blue emitting superluminescent diodes (SLDs), InGaN-based vertical-cavity surface-emitting lasers (VCSELs), and their applications for gigahertz laser based free-space and underwater wireless optical communications.

  1. A Study of the interaction of radiation and semiconductor lasers: an analysis of transient and permanent effects induced on edge emitting and vertical cavity surface emitting laser diodes

    International Nuclear Information System (INIS)

    Pailharey, Eric

    2000-01-01

    The behavior of laser diodes under transient environment is presented in this work. The first section describes the basic phenomena of radiation interaction with matter. The radiative environments, the main characteristics of laser diodes and the research undertaken on the subject are presented and discussed. The tests on 1300 nm edge emitting laser diode are presented in the second section. The response to a transient ionizing excitation is explored using a 532 nm laser beam. The time of return to steady state after the perturbation is decomposed into several steps: decrease of the optical power during excitation, turn-on delay, relaxation oscillations and optical power offset. Their origins are analyzed using the device structure. To include all the phenomena in a numerical simulation of the device, an individual study of low conductivity materials used for the lateral confinement of the current density is undertaken. The effects of a single particle traversing the optical cavity and an analysis of permanent damages induced by neutrons are also determined. In the last section, 850 nm vertical cavity surface emitting laser diodes (VCSEL) are studied. The behavior of these devices which performances are in constant evolution, is investigated as a function of both temperature and polarization. Then VCSEL are submitted to transient ionizing irradiation and their responses are compared to those of edge emitting diodes. When proton implantation is used in the process, we observe the same behavior for both technologies. VCSEL were submitted to neutron fluence and we have studied the influence of the damages on threshold current, emission patterns and maximum of optical power. (author) [fr

  2. Quantum-cascade laser photoacoustic detection of methane emitted from natural gas powered engines

    Science.gov (United States)

    Rocha, M. V.; Sthel, M. S.; Silva, M. G.; Paiva, L. B.; Pinheiro, F. W.; Miklòs, A.; Vargas, H.

    2012-03-01

    In this work we present a laser photoacoustic arrangement for the detection of the important greenhouse gas methane. A quantum-cascade laser and a differential photoacoustic cell were employed. A detection limit of 45 ppbv in nitrogen was achieved as well as a great selectivity. The same methodology was also tested in the detection of methane issued from natural gas powered vehicles (VNG) in Brazil, which demonstrates the excellent potential of this arrangement for greenhouse gas detection emitted from real sources.

  3. Dilute nitride vertical-cavity surface-emitting lasers

    International Nuclear Information System (INIS)

    Jouhti, T; Okhotnikov, O; Konttinen, J; Gomes, L A; Peng, C S; Karirinne, S; Pavelescu, E-M; Pessa, M

    2003-01-01

    A novel quaternary compound semiconductor material, Ga 1-x In x N y As 1-y (0 0.65 In 0.35 N 0.014 As 0.986 /GaAs quantum wells with special strain-mediating layers. The laser characterization was carried out by using a fibre pigtailed 980 nm pump laser diode, 980/1300 nm wavelength division multiplexer and an optical spectrum analyser. A high optical output power of 3.5 mW was coupled lenslessly into a standard single-mode fibre

  4. Theoretical study of annealed proton-exchanged Nd $LiNbO_{3}$ channel waveguide lasers with variational method

    CERN Document Server

    De Long Zhang; Yuan Guo Xie; Guilan, Ding; Yuming, Cui; Cai He Chen

    2001-01-01

    The controllable fabrication parameters, including anneal time, initial exchange time, channel width, dependences of TM/sub 00/ mode size, corresponding effective refractive index, effective pump area, and coupling efficiency between pump and laser modes in z-cut annealed proton-exchanged (APE) Nd:LiNbO/sub 3/ channel waveguide lasers were studied by using variational method. The effect of channel width on the surface index increment and the waveguide depth was taken into account. The features of mode size and effective refractive index were summarized, discussed, and compared with previously published experimental results. The effective pump area, which is directly proportional to threshold pump power, increases strongly, slightly, and very slightly with the increase of anneal time, channel width, and initial exchange time, respectively. However, the coupling efficiency, which is directly proportional to slope efficiency, remains constant (around 0.82) no matter what changes made to these parameters. The var...

  5. Considerations on the determining factors of the angular distribution of emitted particles in laser ablation

    International Nuclear Information System (INIS)

    Konomi, I.; Motohiro, T.; Kobayashi, T.; Asaoka, T.

    2010-01-01

    Simulations of particles which are emitted in laser ablation have been performed by the method of Direct Simulation Monte Carlo to investigate the deposition profiles of the emitted particles. The influences of the temperature, pressure and stream velocity of the initial evaporated layer formed during laser ablation process on the profile of the deposited film have been examined. It is found that the temperature gives a minor influence on the deposition profile, whereas the stream velocity and the pressure of the initial evaporated layer have a greater impact on the deposition profile. The energy in the direction of surface normal (E perpendicular ) and that in the parallel direction of the surface (E || ) are shown to increase and decrease, respectively after the laser irradiation due to collisions between the emitted particles, and this trend is magnified as the pressure increases. As a consequence, the stream velocity in the direction of surface normal increases with the increase in the pressure. A mechanism of the phenomenon that a metal with a lower sublimation energy shows a broader angular distribution of emitted particles is presented. It is suggested that low density of evaporated layer of a metal with a low sublimation energy at its melting point decreases the number of collisions in the layer, leading to the low stream velocity in the direction of surface normal, which results in the broader deposition profile of the emitted particles.

  6. Vertical-cavity surface-emitting laser vapor sensor using swelling polymer reflection modulation

    DEFF Research Database (Denmark)

    Ansbæk, Thor; Nielsen, Claus Højgård; Dohn, Søren

    2012-01-01

    Vapor detection using a low-refractive index polymer for reflection modulation of the top mirror in a vertical-cavity surface-emitting laser (VCSEL) is demonstrated. The VCSEL sensor concept presents a simple method to detect the response of a sensor polymer in the presence of volatile organic...

  7. Acetone vapor sensing using a vertical cavity surface emitting laser diode coated with polystyrene

    DEFF Research Database (Denmark)

    Ansbæk, Thor; Nielsen, Claus Højgaard; Larsen, Niels Bent

    2009-01-01

    We report theoretical and experimental on a new vapor sensor, using a single-mode vertical-cavity surface-emitting laser (VCSEL) coated with a polymer sensor coating, which can detect acetone vapor at a volume fraction of 2.5%. The sensor provides the advantage of standard packaging, small form...

  8. Polymer-coated vertical-cavity surface-emitting laser diode vapor sensor

    DEFF Research Database (Denmark)

    Ansbæk, Thor; Nielsen, Claus Højgaard; Larsen, Niels Bent

    2010-01-01

    We report a new method for monitoring vapor concentration of volatile organic compounds using a vertical-cavity surface-emitting laser (VCSEL). The VCSEL is coated with a polymer thin film on the top distributed Bragg reflector (DBR). The analyte absorption is transduced to the electrical domain ...

  9. Silicon light-emitting diodes and lasers photon breeding devices using dressed photons

    CERN Document Server

    Ohtsu, Motoichi

    2016-01-01

    This book focuses on a novel phenomenon named photon breeding. It is applied to realizing light-emitting diodes and lasers made of indirect-transition-type silicon bulk crystals in which the light-emission principle is based on dressed photons. After presenting physical pictures of dressed photons and dressed-photon phonons, the principle of light emission by using dressed-photon phonons is reviewed. A novel phenomenon named photon breeding is also reviewed. Next, the fabrication and operation of light emitting diodes and lasers are described The role of coherent phonons in these devices is discussed. Finally, light-emitting diodes using other relevant crystals are described and other relevant devices are also reviewed.

  10. Nonlinear dynamics of solitary and optically injected two-element laser arrays with four different waveguide structures: a numerical study.

    Science.gov (United States)

    Li, Nianqiang; Susanto, H; Cemlyn, B R; Henning, I D; Adams, M J

    2018-02-19

    We study the nonlinear dynamics of solitary and optically injected two-element laser arrays with a range of waveguide structures. The analysis is performed with a detailed direct numerical simulation, where high-resolution dynamic maps are generated to identify regions of dynamic instability in the parameter space of interest. Our combined one- and two-parameter bifurcation analysis uncovers globally diverse dynamical regimes (steady-state, oscillation, and chaos) in the solitary laser arrays, which are greatly influenced by static design waveguiding structures, the amplitude-phase coupling factor of the electric field, i.e. the linewidth-enhancement factor, as well as the control parameter, e.g. the pump rate. When external optical injection is introduced to one element of the arrays, we show that the whole system can be either injection-locked simultaneously or display rich, different dynamics outside the locking region. The effect of optical injection is to significantly modify the nature and the regions of nonlinear dynamics from those found in the solitary case. We also show similarities and differences (asymmetry) between the oscillation amplitude of the two elements of the array in specific well-defined regions, which hold for all the waveguiding structures considered. Our findings pave the way to a better understanding of dynamic instability in large arrays of lasers.

  11. Spectral-Modulation Characteristics of Vertical-Cavity Surface-Emitting Lasers

    Science.gov (United States)

    Vas'kovskaya, M. I.; Vasil'ev, V. V.; Zibrov, S. A.; Yakovlev, V. P.; Velichanskii, V. L.

    2018-01-01

    The requirements imposed on vertical-cavity surface-emitting lasers in a number of metrological problems in which optical pumping of alkali atoms is used are considered. For lasers produced by different manufacturers, these requirements are compared with the experimentally observed spectral characteristics at a constant pump current and in the microwave modulation mode. It is shown that a comparatively small number of lasers in the microwave modulation mode make it possible to obtain the spectrum required for atomic clocks based on the coherent population-trapping effect.

  12. A field-deployable compound-specific isotope analyzer based on quantum cascade laser and hollow waveguide

    Science.gov (United States)

    Wu, Sheng; Deev, Andrei

    2013-01-01

    A field deployable Compound Specific Isotope Analyzer (CSIA) coupled with capillary chromatogrpahy based on Quantum Cascade (QC) lasers and Hollow Waveguide (HWG) with precision and chemical resolution matching mature Mass Spectroscopy has been achieved in our laboratory. The system could realize 0.3 per mil accuracy for 12C/13C for a Gas Chromatography (GC) peak lasting as short as 5 seconds with carbon molar concentration in the GC peak less than 0.5%. Spectroscopic advantages of HWG when working with QC lasers, i.e. single mode transmission, noiseless measurement and small sample volume, are compared with traditional free space and multipass spectroscopy methods.

  13. Engineering design of the interaction waveguide for high-power accelerator-driven microwave free-electron lasers

    International Nuclear Information System (INIS)

    Hopkins, D.B.; Clay, H.W.; Stallard, B.W.; Throop, A.L.; Listvinsky, G.; Makowski, M.A.

    1989-01-01

    Linear induction accelerators (LIAs) operating at beam energies of a few million electron volts and currents of a few thousand amperes are suitable drivers for free-electron lasers (FELs). Such lasers are capable of producing gigawatts of peak power and megawatts of average power at microwave frequencies. Such devices are being studied as possible power sources for future high-gradient accelerators and are being constructed for plasma heating applications. At high power levels, the engineering design of the interaction waveguide presents a challenge. This paper discusses several concerns, including electrical breakdown and metal fatigue limits, choice of material, and choice of operating propagation mode. 13 refs., 3 figs

  14. Laser generation of proton beams for the production of short-lived positron emitting radioisotopes

    International Nuclear Information System (INIS)

    Spencer, I.; Ledingham, K.W.D.; Singhal, R.P.; McCanny, T.; McKenna, P.; Clark, E.L.; Krushelnick, K.; Zepf, M.; Beg, F.N.; Tatarakis, M.; Dangor, A.E.; Norreys, P.A.; Clarke, R.J.; Allott, R.M.; Ross, I.N.

    2001-01-01

    Protons of energies up to 37 MeV have been generated when ultra-intense lasers (up to 10 20 W cm -2 ) interact with hydrogen containing solid targets. These protons can be used to induce nuclear reactions in secondary targets to produce β + -emitting nuclei of relevance to the nuclear medicine community, namely 11 C and 13 N via (p, n) and (p,α) reactions. Activities of the order of 200 kBq have been measured from a single laser pulse interacting with a thin solid target. The possibility of using ultra-intense lasers to produce commercial amounts of short-lived positron emitting sources for positron emission tomography (PET) is discussed

  15. Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

    KAUST Repository

    Frost, Thomas; Jahangir, Shafat; Stark, Ethan; Deshpande, Saniya; Hazari, Arnab Shashi; Zhao, Chao; Ooi, Boon S.; Bhattacharya, Pallab K.

    2014-01-01

    A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

  16. Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

    KAUST Repository

    Frost, Thomas

    2014-08-13

    A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

  17. VCSELs Fundamentals, Technology and Applications of Vertical-Cavity Surface-Emitting Lasers

    CERN Document Server

    2013-01-01

    The huge progress which has been achieved in the field is covered here, in the first comprehensive monograph on vertical-cavity surface-emitting lasers (VCSELs) since eight years. Apart from chapters reviewing the research field and the laser fundamentals, there are comprehensive updates on red and blue emitting VCSELs, telecommunication VCSELs, optical transceivers, and parallel-optical links for computer interconnects. Entirely new contributions are made to the fields of vectorial three-dimensional optical modeling, single-mode VCSELs, polarization control, polarization dynamics, very-high-speed design, high-power emission, use of high-contrast gratings, GaInNAsSb long-wavelength VCSELs, optical video links, VCSELs for optical mice and sensing, as well as VCSEL-based laser printing. The book appeals to researchers, optical engineers and graduate students.

  18. INTERACTION OF LASER RADIATION WITH MATTER: Influence of a target on operation of a pulsed CO2 laser emitting microsecond pulses

    Science.gov (United States)

    Baranov, V. Yu; Dolgov, V. A.; Malyuta, D. D.; Mezhevov, V. S.; Semak, V. V.

    1987-12-01

    The profile of pulses emitted by a TEA CO2 laser with an unstable resonator changed as a result of interaction of laser radiation with the surface of a metal in the presence of a breakdown plasma. This influence of a target on laser operation and its possible applications in laser processing of materials are analyzed.

  19. Development of a compact vertical-cavity surface-emitting laser end-pumped actively Q-switched laser for laser-induced breakdown spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shuo; Chen, Rongzhang; Nelsen, Bryan; Chen, Kevin, E-mail: pec9@pitt.edu [Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15260 (United States); Liu, Lei; Huang, Xi; Lu, Yongfeng [Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588 (United States)

    2016-03-15

    This paper reports the development of a compact and portable actively Q-switched Nd:YAG laser and its applications in laser-induced breakdown spectroscopy (LIBS). The laser was end-pumped by a vertical-cavity surface-emitting laser (VCSEL). The cavity lases at a wavelength of 1064 nm and produced pulses of 16 ns with a maximum pulse energy of 12.9 mJ. The laser exhibits a reliable performance in terms of pulse-to-pulse stability and timing jitter. The LIBS experiments were carried out using this laser on NIST standard alloy samples. Shot-to-shot LIBS signal stability, crater profile, time evolution of emission spectra, plasma electron density and temperature, and limits of detection were studied and reported in this paper. The test results demonstrate that the VCSEL-pumped solid-state laser is an effective and compact laser tool for laser remote sensing applications.

  20. Observation and investigation of narrow optical transitions of 167Er3+ ions in femtosecond laser printed waveguides in 7LiYF4 crystal

    Science.gov (United States)

    Minnegaliev, M. M.; Dyakonov, I. V.; Gerasimov, K. I.; Kalinkin, A. A.; Kulik, S. P.; Moiseev, S. A.; Saygin, M. Yu; Urmancheev, R. V.

    2018-04-01

    We produced optical waveguides in the 167Er3+:7 LiYF4 crystal with diameters ranging from 30 to 100 μm by using the depressed-cladding approach with femtosecond laser. Stationary and coherent spectroscopy was performed on the 809 nm optical transitions between the hyperfine sublevels of 4I15/2 and 4I9/2 multiplets of 167Er3+ ions both inside and outside of waveguides. It was found that the spectra of 167Er3+ were slightly broadened and shifted inside the waveguides compared to the bulk crystal spectra. We managed to observe a two-pulse photon echo on this transition and determined phase relaxation times for each waveguide. The experimental results show that the created crystal waveguides doped by rare-earth ions can be used in optical quantum memory and integrated quantum schemes.

  1. Passive Q-switching of femtosecond-laser-written Tm:KLu(WO4)2 waveguide lasers by graphene and MoS2 saturable absorbers

    Science.gov (United States)

    Kifle, Esrom; Mateos, Xavier; Vázquez de Aldana, Javier Rodríguez; Ródenas, Airan; Loiko, Pavel; Zakharov, Viktor; Veniaminov, Andrey; Yu, Haohai; Zhang, Huaijin; Chen, Yanxue; Aguiló, Magdalena; Díaz, Francesc; Griebner, Uwe; Petrov, Valentin

    2018-02-01

    A buried depressed-index channel waveguide with a circular cladding and a core diameter of 40 μm is fabricated in a bulk monoclinic 3 at.% Tm:KLu(WO4)2 crystal by femtosecond direct laser writing. In the continuous-wave regime, the Tm waveguide laser generates 210 mW at 1849.6 nm with a slope efficiency η of 40.8%. Passively Q-switched operation is achieved by inserting transmission-type 2D saturable absorbers (SAs) based on few-layer graphene and MoS2. Using the graphene-SA, a maximum average output power of 25 mW is generated at 1844.8 nm. The pulse characteristics (duration/energy) are 88 ns/18 nJ at a repetition rate of 1.39 MHz.

  2. Characterization of laser-tissue interaction processes by low-boiling emitted substances

    Science.gov (United States)

    Weigmann, Hans-Juergen; Lademann, Juergen; Serfling, Ulrike; Lehnert, W.; Sterry, Wolfram; Meffert, H.

    1996-01-01

    Main point in this study was the investigation of the gaseous and low-boiling substances produced in the laser plume during cw CO2 laser and XeCl laser irradiation of tissue by gas chromatography (GC)/mass spectrometry. The characteristic emitted amounts of chemicals were determined quantitatively using porcine muscular tissue. The produced components were used to determine the character of the chemical reaction conditions inside the interaction zone. It was found that the temperature, and the water content of the tissue are the main parameter determining kind and amount of the emitted substances. The relative intensity of the GC peak of benzene corresponds to a high temperature inside the interaction area while a relative strong methylbutanal peak is connected with a lower temperature which favors Maillard type reaction products. The water content of the tissue determines the extent of oxidation processes during laser tissue interaction. For that reason the moisture in the tissue is the most important parameter to reduce the emission of harmful chemicals in the laser plume. The same methods of investigation are applicable to characterize the interaction of a controlled and an uncontrolled rf electrosurgery device with tissue. The results obtained with model tissue are in agreement with the situation characteristic in laser surgery.

  3. Compact electro-absorption modulator integrated with vertical-cavity surface-emitting laser for highly efficient millimeter-wave modulation

    International Nuclear Information System (INIS)

    Dalir, Hamed; Ahmed, Moustafa; Bakry, Ahmed; Koyama, Fumio

    2014-01-01

    We demonstrate a compact electro-absorption slow-light modulator laterally-integrated with an 850 nm vertical-cavity surface-emitting laser (VCSEL), which enables highly efficient millimeter-wave modulation. We found a strong leaky travelling wave in the lateral direction between the two cavities via widening the waveguide width with a taper shape. The small signal response of the fabricated device shows a large enhancement of over 55 dB in the modulation amplitude at frequencies beyond 35 GHz; thanks to the photon-photon resonance. A large group index of over 150 in a Bragg reflector waveguide enables the resonance at millimeter wave frequencies for 25 μm long compact modulator. Based on the modeling, we expect a resonant modulation at a higher frequency of 70 GHz. The resonant modulation in a compact slow-light modulator plays a significant key role for high efficient narrow-band modulation in the millimeter wave range far beyond the intrinsic modulation bandwidth of VCSELs.

  4. 700 W blue fiber-coupled diode-laser emitting at 450 nm

    Science.gov (United States)

    Balck, A.; Baumann, M.; Malchus, J.; Chacko, R. V.; Marfels, S.; Witte, U.; Dinakaran, D.; Ocylok, S.; Weinbach, M.; Bachert, C.; Kösters, A.; Krause, V.; König, H.; Lell, A.; Stojetz, B.; Löffler, A.; Strauss, U.

    2018-02-01

    A high-power blue laser source was long-awaited for processing materials with low absorption in the near infrared (NIR) spectral range like copper or gold. Due to the huge progress of GaN-based semiconductors, the performance of blue diode-lasers has made a major step forward recently. With the availability of unprecedented power levels at cw-operating blue diode-lasers emitting at 450 nm, it was possible to set up a high-power diode-laser in the blue spectral range to address these conventional laser applications and probably beyond that to establish completely new utilizations for lasers. Within the scope of the research project "BlauLas", funded within the German photonic initiative "EFFILAS" [8] by the German Federal Ministry of Education and Research (BMBF), Laserline in cooperation with OSRAM aims to realize a cw fiber-coupled diode-laser exceeding 1 kW blue laser power. In this paper the conceptual design and experimental results of a 700 W blue fiber-coupled diode-laser are presented. Initially a close look had to be taken on the mounting techniques of the semiconductors to serve the requirements of the GaN laser diodes. Early samples were used for extensive long term tests to investigate degradation processes. With first functional laser-modules we set up fiber-coupled laser-systems for further testing. Besides adaption of well-known optical concepts a main task within the development of the laser system was the selection and examination of suitable materials and assembling in order to minimize degradation and reach adequate lifetimes. We realized R&D blue lasersystems with lifetimes above 5,000 h, which enable first application experiments on processing of various materials as well as experiments on conversion to white-light.

  5. Short pulse generation in a passively mode-locked photonic crystal semiconductor laser

    DEFF Research Database (Denmark)

    Heuck, Mikkel; Blaaberg, Søren; Mørk, Jesper

    2010-01-01

    We present a new type of passively mode-locked laser with quantum wells embedded in photonic crystal waveguides operating in the slow light regime, which is capable of emitting sub picosecond pulses with widely controllable properties......We present a new type of passively mode-locked laser with quantum wells embedded in photonic crystal waveguides operating in the slow light regime, which is capable of emitting sub picosecond pulses with widely controllable properties...

  6. Short-cavity DBR laser using an InP/InGaAsP deep-ridge waveguide with vertical-groove gratings

    NARCIS (Netherlands)

    Segawa, T.; Docter, B.; Kakitsuka, T.; Matsuo, S.; Ishii, T.; Kawaguchi, Y.; Kondo, Y.; Karouta, F.; Smit, M.K.; Suzuki, H.

    2007-01-01

    A compact distributed Bragg reflector (DBR) laser was fabricated using an InP/InGaAsP deep-ridge waveguide with vertical-groove gratings. We achieved stable single-mode laser operation with an active length of only 25-µm with low threshold current.

  7. Extremely wide lasing bandwidth from InAs/InP quantumdash ridge-waveguide laser near 1.6 μm

    KAUST Repository

    Khan, Mohammed Zahed Mustafa; Ng, Tien Khee; Lee, Chisen; Bhattacharya, Pallab K.; Ooi, Boon S.

    2013-01-01

    We demonstrate an ultra-broad lasing bandwidth (-3dB) of > 50 nm utilizing InAs/InGaAlAs/InP quantum-dash ridge-waveguide laser using chirped AlGaInAs barrier layer thickness. Our device exhibits a recorded bandwidth and significant improvement of laser characteristics

  8. Efficient and ultra-narrow-linewidth integrated waveguide lasers in Al2O3:Yb and Al2O3:Er

    NARCIS (Netherlands)

    Bernhardi, Edward; van Wolferen, Hendricus A.G.M.; Worhoff, Kerstin; de Ridder, R.M.; Pollnau, Markus

    The ability to integrate Bragg grating structures with optical waveguides provides the opportunity to realize a variety of compact monolithic optical devices, such as distributed feedback (DFB) lasers, and distributed Bragg reflector (DBR) lasers. In this work, we report passive DBR cavities with

  9. An experimental analysis of the waveguide modes in a high-gain free-electron laser amplifier

    International Nuclear Information System (INIS)

    Anderson, B.R.

    1989-01-01

    The presence, growth, and interaction of transverse waveguide modes in high-gain free-electron laser (FEL) amplifiers has been observed and studied. Using the Electron Laser Facility at Lawrence Livermore National Laboratory, a 3 MeV, 800 A electron beam generated by the Experimental Test Accelerator was injected into a planar wiggler. Power was then extracted and measured in the fundamental (TE 01 ) an higher-order modes (Te 21 and TM 21 ) under various sets of operating conditions. Horizontal focusing through the wiggler was provided by external quadrupole magnets. There was no axial guide field. The input microwave signal for amplification was generated by a 100 kW magnetron operating at 34.6 Ghz. Power measurements were taken for both flat and tapered wigglers, for two sizes of waveguide, and for both flat and tapered wigglers, for two sizes of waveguide, and for both fundamental and higher mode injection. Mode content was determined by sampling the radiated signal at specific points in the radiation patter. For the flat wiggler and with the large waveguide (2.9 cm x 9.8 cm) the power in the higher modes was comparable to power in the fundamental. both exhibited gains greater than 30 dB/m prior to saturation and both reached powers in excess of 80 MW. Choice of injection mode had little effect on the operation of the system. Operation with the smaller guide (WR-229) provided much better mode selectivity. The fundamental mode continued to show optimum gain in excess of 30 dB/m while the higher-mode gain was of order 20 dB/m. As expected, power output increased significantly with the tapered wigglers. The relative mode content depended on the specific taper used

  10. Self-mixing interferometry in vertical-cavity surface-emitting lasers for nanomechanical cantilever sensing

    Science.gov (United States)

    Larsson, David; Greve, Anders; Hvam, Jørn M.; Boisen, Anja; Yvind, Kresten

    2009-03-01

    We have experimentally investigated self-mixing interference produced by the feedback of light from a polymer micrometer-sized cantilever into a vertical-cavity surface-emitting laser for sensing applications. In particular we have investigated how the visibility of the optical output power and the junction voltage depends on the laser injection current and the distance to the cantilever. The highest power visibility obtained from cantilevers without reflective coatings was ˜60%, resulting in a very high sensitivity of 45 mV/nm with a noise floor below 1.2 mV. Different detection schemes are discussed.

  11. Self-mixing interferometry in vertical-cavity surface-emitting lasers for nanomechanical cantilever sensing

    DEFF Research Database (Denmark)

    Larsson, David; Greve, Anders; Hvam, Jørn Märcher

    2009-01-01

    We have experimentally investigated self-mixing interference produced by the feedback of light from a polymer micrometer-sized cantilever into a vertical-cavity surface-emitting laser for sensing applications. In particular we have investigated how the visibility of the optical output power...... and the junction voltage depends on the laser injection current and the distance to the cantilever. The highest power visibility obtained from cantilevers without reflective coatings was 60%, resulting in a very high sensitivity of 45 mV/nm with a noise floor below 1.2 mV. Different detection schemes are discussed....

  12. Ultrafast directional beam switching in coupled vertical-cavity surface-emitting lasers

    International Nuclear Information System (INIS)

    Ning, C. Z.; Goorjian, P.

    2001-01-01

    We propose a strategy to performing ultrafast directional beam switching using two coupled vertical-cavity surface-emitting lasers (VCSELs). The proposed strategy is demonstrated for two VCSELs of 5.6 μm in diameter placed about 1 μm apart from the edges, showing a switching speed of 42 GHz with a maximum far-field angle span of about 10 degree. [copyright] 2001 American Institute of Physics

  13. Analysis of the x-ray spectrum emitted by laser-produced plasma of dysprosium

    International Nuclear Information System (INIS)

    Marcus, Gilad; Louzon, Einat; Henis, Zohar; Maman, Shlomo; Mandelbaum, Pinchas

    2007-01-01

    A detailed analysis of the x-ray spectrum (5-10.2 A ring ) emitted by laser-produced plasma of dysprosium (Dy) is given using ab initio calculations with the HULLAC relativistic code and isoelectronic trends. Resonance 3d-4p, 3d-nf (n=4 to 7), 3p-4s, and 3p-4d transitions of Ni I-like Dy XXXIX and neighboring ion satellite transitions (from Dy XXXIV to Dy XL) are identified

  14. Experimental and theoretical analysis of the dominant lateral waveguiding mechanism in 975 nm high power broad area diode lasers

    International Nuclear Information System (INIS)

    Crump, P; Böldicke, S; Schultz, C M; Ekhteraei, H; Wenzel, H; Erbert, G

    2012-01-01

    For maximum fibre-coupled power, high power broad area diode lasers must operate with small lateral far field angles at high continuous wave (CW) powers. However, these structures are laterally multi-moded, with low beam quality and wide emission angles. In order to experimentally determine the origin of the low beam quality, spectrally resolved near and far field measurements were performed for a diode laser with 50 µm stripe width. Within the range measured (CW optical output powers to 1.5 W) the laser is shown to operate in just six stable lateral modes, with spatially periodic profiles. Comparisons of the measured profiles with the results of two-dimensional modal simulation demonstrate that current-induced thermal lensing dominates the lateral waveguiding, in spite of the presence of both strong built-in index guiding and gain guiding. No evidence is seen for filamentation. Building on the diagnosis, proposals are presented for improvements to beam quality. (paper)

  15. Photodegradation and polarization properties of vertical external surface-emitting organic laser

    International Nuclear Information System (INIS)

    Leang, Tatiana

    2014-01-01

    Although organic solid-state dye lasers can provide wavelength tunability in the whole visible spectrum and offers perspectives of low-cost compact lasers, they are still limited by several drawbacks, especially photodegradation. The geometry of a Vertical External Cavity Surface-emitting Organic Laser (VECSOL) enables organic lasers to reach high energies, excellent conversion efficiencies and good beam quality, it also enables an external control on many parameters, a feature that we have used here to study the photodegradation phenomenon as well as some polarization properties of organic solid-state lasers. In the first part of this thesis, we studied the lifetime of the laser upon varying several parameters (pump pulse-width, repetition rate, output coupling,...) and we found that the intracavity laser intensity, independently of the pump intensity, had a major on photodegradation rate. Moreover, we observed that the profile of the laser beam was also degrading with time: while it is Gaussian in the beginning it gradually shifts to an annular shape. In the second part, we investigated the polarization properties of VECSOLs, with a special emphasis on fluorescence properties of some typical dyes used in lasers. The crucial role played by resonant non-radiative energy transfers between dye molecules (HOMO-FRET) is evidenced and enables explaining the observed fluorescence depolarization, compared to the expected limiting fluorescence anisotropy. Energy transfers happen to play a negligible role above laser threshold, as the organic laser beam is shown to be linearly polarized in a wide range of experimental conditions when excitation occurs in the first singlet state. (author) [fr

  16. Bismuth telluride topological insulator nanosheet saturable absorbers for q-switched mode-locked Tm:ZBLAN waveguide lasers

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xiantao; Gross, Simon; Withford, Michael J.; Fuerbach, Alexander [Centre for Ultrahigh bandwidth Devices for Optical Systems (CUDOS) and MQ Photonics Research Centre, Dept. of Physics and Astronomy, Macquarie Univ., NSW (Australia); Zhang, Han; Guo, Zhinan [SZU-NUS Collaborative Innovation Centre for Optoelectronic Science and Technology, Key Lab. of Optoelectronic Devices and Systems of Ministry of Education, College of Optoelectronic Engineering, Shenzhen Univ. (China)

    2016-08-15

    Nanosheets of bismuth telluride (Bi{sub 2}Te{sub 3}), a topological insulator material that exhibits broadband saturable absorption due to its non-trivial Dirac-cone like energy structure, are utilized to generate short pulses from Tm:ZBLAN waveguide lasers. By depositing multiple layers of a carefully prepared Bi{sub 2}Te{sub 3} solution onto a glass substrate, the modulation depth and the saturation intensity of the fabricated devices can be controlled and optimized. This approach enables the realization of saturable absorbers that feature a modulation depth of 13% and a saturation intensity of 997 kW/cm{sup 2}. For the first time to our knowledge, Q-switched mode-locked operation of a linearly polarized mid-IR ZBLAN waveguide chip laser was realized in an extended cavity configuration using the topological insulator Bi{sub 2}Te{sub 3}. The maximum average output power of the laser is 16.3 mW and the Q-switched and mode-locked repetition rates are 44 kHz and 436 MHz, respectively. (copyright 2016 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Direct laser writing of a low-loss waveguide with independent control over the transverse dimension and the refractive index contrast between the core and the cladding.

    Science.gov (United States)

    Masselin, Pascal; Bychkov, Eugène; Coq, David Le

    2016-08-01

    In this Letter, we present the realization of a low-loss waveguide in a chalcogenide glass by direct laser writing technique in a particular configuration that allows the independent control over the diameter of the core and the magnitude of the refractive index contrast with the cladding. The waveguide is of multicore type and composed of 19 channels arranged on a hexagonal lattice. Each channel is obtained by stacking voxels of refractive index variation obtained by static exposure to femtosecond laser pulse burst. The distance between the channels can be used to vary the diameter of the waveguide, while the duration of laser burst controls the magnitude of the effective index and the propagation loss. We demonstrate that it can be reduced down to 0.11 dB/cm.

  18. Vertical cavity surface emitting lasers from all-inorganic perovskite quantum dots

    Science.gov (United States)

    Sun, Handong; Wang, Yue; Li, Xiaoming; Zeng, Haibo

    We report the breakthrough in realizing the challenging while practically desirable vertical cavity surface emitting lasers (VCSELs) based on the CsPbX3 inorganic perovskite nanocrystals (IPNCs). These laser devices feature record low threshold (9 µJ/cm2), unidirectional output (beam divergence of 3.6º) and superb stability. We show that both single-mode and multimode lasing operation are achievable in the device. In contrast to traditional metal chacogenide colloidal quantum dots based lasers where the pump thresholds for the green and blue wavelengths are typically much higher than that of the red, these CsPbX3 IPNC-VCSEL devices are able to lase with comparable thresholds across the whole visible spectral range, which is appealing for achieving single source-pumped full-color lasers. We further reveal that these lasers can operate in quasi-steady state regime, which is very practical and cost-effective. Given the facile solution processibility, our CsPbX3 IPNC-VCSEL devices may hold great potential in developing low-cost yet high-performance lasers, promising in revolutionizing the vacuum-based epitaxial semiconductor lasers.

  19. Optoelectronic integrated circuits utilising vertical-cavity surface-emitting semiconductor lasers

    International Nuclear Information System (INIS)

    Zakharov, S D; Fyodorov, V B; Tsvetkov, V V

    1999-01-01

    Optoelectronic integrated circuits with additional optical inputs/outputs, in which vertical-cavity surface-emitting (VCSE) lasers perform the data transfer functions, are considered. The mutual relationship and the 'affinity' between optical means for data transfer and processing, on the one hand, and the traditional electronic component base, on the other, are demonstrated in the case of implementation of three-dimensional interconnects with a high transmission capacity. Attention is drawn to the problems encountered when semiconductor injection lasers are used in communication lines. It is shown what role can be played by VCSE lasers in solving these problems. A detailed analysis is made of the topics relating to possible structural and technological solutions in the fabrication of single lasers and of their arrays, and also of the problems hindering integrating of lasers into emitter arrays. Considerable attention is given to integrated circuits with optoelectronic smart pixels. Various technological methods for vertical integration of GaAs VCSE lasers with the silicon substrate of a microcircuit (chip) are discussed. (review)

  20. Few-mode vertical-cavity surface-emitting laser: Optional emission of transverse modes with different polarizations

    Science.gov (United States)

    Zhong, Chuyu; Zhang, Xing; Hofmann, Werner; Yu, Lijuan; Liu, Jianguo; Ning, Yongqiang; Wang, Lijun

    2018-05-01

    Few-mode vertical-cavity surface-emitting lasers that can be controlled to emit certain modes and polarization states simply by changing the biased contacts are proposed and fabricated. By directly etching trenches in the p-doped distributed Bragg reflector, the upper mesa is separated into several submesas above the oxide layer. Individual contacts are then deposited. Each contact is used to control certain transverse modes with different polarization directions emitted from the corresponding submesa. These new devices can be seen as a prototype of compact laser sources in mode division multiplexing communications systems.

  1. Densification behavior, doping profile and planar waveguide laser performance of the tape casting YAG/Nd:YAG/YAG ceramics

    Science.gov (United States)

    Ge, Lin; Li, Jiang; Qu, Haiyun; Wang, Juntao; Liu, Jiao; Dai, Jiawei; Zhou, Zhiwei; Liu, Binglong; Kou, Huamin; Shi, Yun; Wang, Zheng; Pan, Yubai; Gao, Qingsong; Guo, Jingkun

    2016-10-01

    The sintering behavior and doping concentration profile of the planar waveguide YAG/Nd:YAG/YAG ceramics by the tape casting and solid-state reaction method were investigated on the basis of densification trajectory, microstructure evolution, and Nd3+ ions diffusion. The porosity of the green body by tape casting and cold isostatic pressing is about 38.6%. And the green bodies were consolidated from 1100 °C to 1800 °C for 0.5-20 h to study the densification and the doping diffusion behaviors. At the temperature higher than 1500 °C, pure YAG phase is formed, followed by the densification and grain growth process. With the increase of temperature, two sintering stages occur, corresponding to remarkable densification and significant grain growth, respectively. The mechanism controlling densification at 1550 °C is grain boundary diffusion. The diffusion of Nd3+ ions is more sensitive to temperature than the sintering time, and the minimum temperature required for the obvious diffusion of Nd3+ ions is higher than 1700 °C. Finally, planar waveguide YAG/1.5 at.%Nd:YAG/YAG transparent ceramics with in-line transmittance of 84.8% at 1064 nm were obtained by vacuum-sintering at 1780 °C for 30 h. The fluorescence lifetime of 4F3/2 state of Nd3+ in the specimen is about 259 μs. The prepared ceramic waveguide was tested in a laser amplifier and the laser pulse was amplificated from 87 mJ to 238 mJ, with the pump energy of 680 mJ.

  2. Low-loss 3D-laser-written mid-infrared LiNbO3 depressed-index cladding waveguides for both TE and TM polarizations.

    Science.gov (United States)

    Nguyen, Huu-Dat; Ródenas, Airán; Vázquez de Aldana, Javier R; Martín, Guillermo; Martínez, Javier; Aguiló, Magdalena; Pujol, Maria Cinta; Díaz, Francesc

    2017-02-20

    We report mid-infrared LiNbO3 depressed-index microstructured cladding waveguides fabricated by three-dimensional laser writing showing low propagation losses (~1.5 dB/cm) at 3.68 µm wavelength for both the transverse electric and magnetic polarized modes, a feature previously unachieved due to the strong anisotropic properties of this type of laser microstructured waveguides and which is of fundamental importance for many photonic applications. Using a heuristic modeling-testing iteration design approach which takes into account cladding induced stress-optic index changes, the fabricated cladding microstructure provides low-loss single mode operation for the mid-IR for both orthogonal polarizations. The dependence of the localized refractive index changes within the cladding microstructure with post-fabrication thermal annealing processes was also investigated, revealing its complex dependence of the laser induced refractive index changes on laser fabrication conditions and thermal post-processing steps. The waveguide modes properties and their dependence on thermal post-processing were numerically modeled and fitted to the experimental values by systematically varying three fundamental parameters of this type of waveguides: depressed refractive index values at sub-micron laser-written tracks, track size changes, and piezo-optic induced refractive index changes.

  3. A compact O-plus C-band switchable quad-wavelength fiber laser using arrayed waveguide grating

    International Nuclear Information System (INIS)

    Latif, A A; Zulkifli, M Z; Hassan, N A; Ahmad, H; Harun, S W; Ghani, Z A

    2010-01-01

    In this paper, a design of a quad-wavelength fiber laser (QWFL) operating in two different regions namely the O-band covering from 1302 nm to1317.4 nm and C-band from 1530.5 nm to 1548.0 nm is presented. Two different ASE sources from semiconductor optical amplifiers (SOAs) are used, one at 1310 nm and the other at1550 nm. By using a 1×24 channels arrayed waveguide grating (AWG) with 100 GHz interchannel spacing, the system is capable of generating 24 different wavelengths in more than 24 ways of quad-wavelength fiber laser with 0.6 nm and 0.8 nm of interval channel for O-band and C-band regions, respectively

  4. Active Photonic Crystal Waveguides

    DEFF Research Database (Denmark)

    Ek, Sara

    This thesis deals with the fabrication and characterization of active photonic crystal waveguides, realized in III-V semiconductor material with embedded active layers. The platform offering active photonic crystal waveguides has many potential applications. One of these is a compact photonic...... due to photonic crystal dispersion. The observations are explained by the enhancement of net gain by light slow down. Another application based on active photonic crystal waveguides is micro lasers. Measurements on quantum dot micro laser cavities with different mirror configurations and photonic...

  5. Reactive ion beam etching for microcavity surface emitting laser fabrication: technology and damage characterization

    International Nuclear Information System (INIS)

    Matsutani, A.; Tadokoro, T.; Koyama, F.; Iga, K.

    1993-01-01

    Reactive ion beam etching (RIBE) is an effective dry etching technique for the fabrication of micro-sized surface emitting (SE) lasers and optoelectronic devices. In this chapter, some etching characteristics for GaAs, InP and GaInAsP with a Cl 2 gas using an RIBE system are discussed. Micro-sized circular mesas including GaInAsP/InP multilayers with vertical sidewalls were fabricated. RIBE-induced damage in InP substrates was estimated by C-V and PL measurement. In addition, the removal of the induced damage by the second RIBE with different conditions for the InP wafer was proposed. The sidewall damage is characterized by photoluminescence emitted from the etched sidewall of a GaInAsP/InP DH wafer. (orig.)

  6. First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

    KAUST Repository

    Majid, Mohammed Abdul; Al-Jabr, Ahmad; Oubei, Hassan M.; Alias, Mohd Sharizal; Anjum, Dalaver H.; Ng, Tien Khee; Ooi, Boon S.

    2015-01-01

    The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm −2 and a maximum output power of ∼46

  7. 5-μm vertical external-cavity surface-emitting laser (VECSEL) for spectroscopic applications

    Science.gov (United States)

    Rahim, M.; Khiar, A.; Felder, F.; Fill, M.; Zogg, H.; Sigrist, M. W.

    2010-08-01

    Mid-IR tunable VECSELs (Vertical External-Cavity Surface-Emitting Lasers) emitting at 4-7 μm wavelengths and suitable for spectroscopic sensing applications are described. They are realized with lead-chalcogenide (IV-VI) narrow band gap materials. The active part, a single 0.6-2-μm thick PbTe or PbSe gain layer, is grown onto an epitaxial Bragg mirror consisting of two or three Pb1- y Eu y Te/BaF2 quarter-wavelength layer pairs. All layers are deposited by MBE in a single run employing a BaF2 or Si substrate, no further processing is needed. The cavity is completed with an external curved top mirror, which is again realized with an epitaxial Bragg structure. Pumping is performed optically with a 1.5-μm laser. Maximum output power for pulsed operation is currently up to >1 Wp at -173°C and >10 mW at 10°C. In continuous wave (CW) operation, 18 mW at 100 K are reached. Still higher operating temperatures and/or powers are expected with better heat-removal structures and better designs employing QW (Quantum-Wells). Advantages of mid-IR VECSELs compared to edge-emitting lasers are their very good beam quality (circular beam with 15 μm are accessible with Pb1- y X y Z (X=Sr, Eu, Sn, Z=Se, Te) and/or including QW.

  8. Sub-monolayer dot vertical-cavity surface-emitting lasers

    International Nuclear Information System (INIS)

    Blokhin, S.A.; Maleev, N.A.; Kuz'menkov, A.G.

    2006-01-01

    Vertical-cavity surface-emitting lasers (VCSELs) based on submonolayer InGaAs quantum-dot active region and doped with AlGaAs/GaAs distributed Bragg reflectors were grown by molecular beam epitaxy. 3 μm aperture single-mode VCSELs demonstrate lasing at 980 nm with threshold current of 0.6 mA, maximum output power of 4 mW and external differential efficiency as high as 68%. Ultimately low internal optical losses were measured for these multimode sub-monolayer quantum dot VCSELs [ru

  9. First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

    KAUST Repository

    Majid, Mohammed Abdul

    2015-06-26

    The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm −2 and a maximum output power of ∼46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.

  10. Resonantly diode pumped Er:YAG laser systems emitting at 1645 nm for methane detection

    International Nuclear Information System (INIS)

    Fritsche, H; Lux, O; Wang, X; Zhao, Z; Eichler, H J

    2013-01-01

    We report on the development of compact and frequency-stable Er:YAG laser systems emitting in the eye-safe spectral region. Resonant cw diode pumping provides 4.5 W output power in cw operation and 2.2 mJ in Q-switched operation with pulse duration of about 140 ns. The application of intra-cavity etalons allows for wavelength tuning from 1645.22 to 1646.33 nm while the frequency stability accounts for less than 50 MHz. The potential of the erbium laser sources in terms of methane detection was evaluated under laboratory conditions by absorption measurements employing a multi-pass absorption cell. The experimental investigations were accompanied by theoretical studies on the influence of pressure broadening on the absorption behavior of methane. (letter)

  11. High power cascade diode lasers emitting near 2 μm

    Energy Technology Data Exchange (ETDEWEB)

    Hosoda, Takashi; Feng, Tao; Shterengas, Leon, E-mail: leon.shterengas@stonybrook.edu; Kipshidze, Gela; Belenky, Gregory [State University of New York at Stony Brook, Stony Brook, New York 11794 (United States)

    2016-03-28

    High-power two-stage cascade GaSb-based type-I quantum well diode lasers emitting near 2 μm were designed and fabricated. Coated devices with cavity length of 3 mm generated about 2 W of continuous wave power from 100-μm-wide aperture at the current of 6 A. The power conversion efficiency peaked at 20%. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Design optimization eliminated parasitic optical absorption and thermionic emission, and included modification of the InAs quantum wells of electron and composition and doping profile of hole injectors. Utilization of the cascade pumping scheme yielded 2 μm lasers with improved output power and efficiency compared to existing state-of-the-art diodes.

  12. Continuously tunable monomode mid-infrared vertical external cavity surface emitting laser on Si

    Science.gov (United States)

    Khiar, A.; Rahim, M.; Fill, M.; Felder, F.; Hobrecker, F.; Zogg, H.

    2010-10-01

    A tunable PbTe based mid-infrared vertical external cavity surface emitting laser is described. The active part is a ˜1 μm thick PbTe layer grown epitaxially on a Bragg mirror on the Si-substrate. The cavity is terminated with a curved Si/SiO Bragg top mirror and pumped optically with a 1.55 μm laser. Cavity length is <100 μm in order that only one longitudinal mode is supported. By changing the cavity length, up to 5% wavelength continuous and mode-hop free tuning is achieved at fixed temperature. The total tuning extends from 5.6 to 4.7 μm at 100-170 K operation temperature.

  13. Femtosecond laser microfabrication of optical waveguides in commercial microfluidic lab-on-a-chip

    NARCIS (Netherlands)

    Osellame, R.; Martinez-Vazquez, R.; Ramponi, R.; Cerullo, G.; Dongre, C.; Dekker, R.; Hoekstra, Hugo; Pollnau, Markus

    One of the main challenges of lab-on-a-chip technology is the on-chip integration of photonic functionalities by manufacturing optical waveguides for sensing biomolecules flowing in the microchannels. Such integrated approach has many advantages over traditional free-space optical sensing, such as

  14. Bragg-grating-based rare-earth-ion-doped channel waveguide lasers and their applications

    NARCIS (Netherlands)

    Bernhardi, Edward

    2012-01-01

    The research presented in this thesis concerns the investigation and development of Bragggrating-based integrated cavities for the rare-earth-ion-doped Al2O3 (aluminium oxide) waveguide platform, both from a theoretical and an experimental point of view, with the primary purpose of realizing

  15. High precision AlGaAsSb ridge-waveguide etching by in situ reflectance monitored ICP-RIE

    Science.gov (United States)

    Tran, N. T.; Breivik, Magnus; Patra, S. K.; Fimland, Bjørn-Ove

    2014-05-01

    GaSb-based semiconductor diode lasers are promising candidates for light sources working in the mid-infrared wavelength region of 2-5 μm. Using edge emitting lasers with ridge-waveguide structure, light emission with good beam quality can be achieved. Fabrication of the ridge waveguide requires precise etch stop control for optimal laser performance. Simulation results are presented that show the effect of increased confinement in the waveguide when the etch depth is well-defined. In situ reflectance monitoring with a 675 nm-wavelength laser was used to determine the etch stop with high accuracy. Based on the simulations of laser reflectance from a proposed sample, the etching process can be controlled to provide an endpoint depth precision within +/- 10 nm.

  16. Transverse and polarization effects in index-guided vertical-cavity surface-emitting lasers

    International Nuclear Information System (INIS)

    Torre, M. S.; Masoller, C.; Mandel, Paul

    2006-01-01

    We study numerically the polarization dynamics of vertical-cavity surface-emitting lasers (VCSEL's) operating in the fundamental transverse mode. We use an extension of the spin-flip model that not only accounts for the vector nature of the laser field, but also considers spatial transverse effects. The model assumes two orthogonal, linearly polarized fields, which are coupled to two carrier populations, associated with different spin sublevels of the conduction and valence bands in the quantum-well active region. Spatial effects are taken into account by considering transverse profiles for the two polarizations, for the two carrier populations, and for the carrier diffusion. The optical profile is the LP 01 mode, suitable for describing index-guided VCSEL's with cylindrical symmetry emitting on the fundamental transverse mode for both polarizations. We find that in small-active-region VCSEL's, fast carrier diffusion induces self-sustained oscillations of the total laser output, which are not present in larger-area devices or with slow carrier diffusion. These self-pulsations appear close to threshold, and, as the injection current increases, they grow in amplitude; however, there is saturation and the self-pulsations disappear at higher injection levels. The dependence of the oscillation amplitude on various laser parameters is investigated, and the results are found to be in good qualitative agreement with those reported by Van der Sande et al. [Opt. Lett. 29, 53 (2004)], based on a rate-equation model that takes into account transverse inhomogeneities through an intensity-dependent confinement factor

  17. Quantitative study of rectangular waveguide behavior in the THz.

    Energy Technology Data Exchange (ETDEWEB)

    Rowen, Adam M.; Nordquist, Christopher Daniel; Wanke, Michael Clement

    2009-10-01

    This report describes our efforts to quantify the behavior of micro-fabricated THz rectangular waveguides on a configurable, robust semiconductor-based platform. These waveguides are an enabling technology for coupling THz radiation directly from or to lasers, mixers, detectors, antennas, and other devices. Traditional waveguides fabricated on semiconductor platforms such as dielectric guides in the infrared or co-planar waveguides in the microwave regions, suffer high absorption and radiative losses in the THz. The former leads to very short propagation lengths, while the latter will lead to unwanted radiation modes and/or crosstalk in integrated devices. This project exploited the initial developments of THz micro-machined rectangular waveguides developed under the THz Grand Challenge Program, but instead of focusing on THz transceiver integration, this project focused on exploring the propagation loss and far-field radiation patterns of the waveguides. During the 9 month duration of this project we were able to reproduce the waveguide loss per unit of length in the waveguides and started to explore how the loss depended on wavelength. We also explored the far-field beam patterns emitted by H-plane horn antennas attached to the waveguides. In the process we learned that the method of measuring the beam patterns has a significant impact on what is actually measured, and this may have an effect on most of the beam patterns of THz that have been reported to date. The beam pattern measurements improved significantly throughout the project, but more refinements of the measurement are required before a definitive determination of the beam-pattern can be made.

  18. Real-Time N2O Gas Detection System for Agricultural Production Using a 4.6-µm-Band Laser Source Based on a Periodically Poled LiNbO3 Ridge Waveguide

    Directory of Open Access Journals (Sweden)

    Toshihiro Yoshihara

    2013-08-01

    Full Text Available This article describes a gas monitoring system for detecting nitrous oxide (N2O gas using a compact mid-infrared laser source based on difference-frequency generation in a quasi-phase-matched LiNbO3 waveguide. We obtained a stable output power of 0.62 mW from a 4.6-μm-band continuous-wave laser source operating at room temperature. This laser source enabled us to detect atmospheric N2O gas at a concentration as low as 35 parts per billion. Using this laser source, we constructed a new real-time in-situ monitoring system for detecting N2O gas emitted from potted plants. A few weeks of monitoring with the developed detection system revealed a strong relationship between nitrogen fertilization and N2O emission. This system is promising for the in-situ long-term monitoring of N2O in agricultural production, and it is also applicable to the detection of other greenhouse gases.

  19. Real-time N2O gas detection system for agricultural production using a 4.6-µm-band laser source based on a periodically poled LiNbO3 ridge waveguide.

    Science.gov (United States)

    Tokura, Akio; Asobe, Masaki; Enbutsu, Koji; Yoshihara, Toshihiro; Hashida, Shin-nosuke; Takenouchi, Hirokazu

    2013-08-05

    This article describes a gas monitoring system for detecting nitrous oxide (N2O) gas using a compact mid-infrared laser source based on difference-frequency generation in a quasi-phase-matched LiNbO3 waveguide. We obtained a stable output power of 0.62 mW from a 4.6-μm-band continuous-wave laser source operating at room temperature. This laser source enabled us to detect atmospheric N2O gas at a concentration as low as 35 parts per billion. Using this laser source, we constructed a new real-time in-situ monitoring system for detecting N2O gas emitted from potted plants. A few weeks of monitoring with the developed detection system revealed a strong relationship between nitrogen fertilization and N2O emission. This system is promising for the in-situ long-term monitoring of N2O in agricultural production, and it is also applicable to the detection of other greenhouse gases.

  20. Proton irradiation effects in oxide-confined vertical cavity surface emitting laser (VCSEL) diodes

    International Nuclear Information System (INIS)

    Barnes, C.E.; Swift, G.M.; Guertin, S.; Schwank, J.R.; Armendariz, M.G.; Hash, G.L.; Choquette, K.D.

    1999-01-01

    Vertical cavity surface emitting laser (VCSEL) diodes are employed as the emitter portion of opto-couplers that are used in space applications. Proton irradiation studies on VCSELs were performed at the Indiana University cyclotron facility. The beam energy was set at 192 MeV, the beam current was 200 nA that is equivalent to a flux of approximately 1*10 11 protons/cm 2 .s. We conclude that the oxide confined VCSELs examined in this study show more than sufficient radiation hardness for nearly all space applications. The observed proton-induced decreases in light output and the corresponding increases in laser threshold current can be explained in terms of proton-induced displacement damage which introduces non-radiative recombination centers in the active region of the lasers and causes a decrease in laser efficiency. These radiation effects accentuate the detrimental thermal effects observed at high currents. We also note that forward bias annealing is effective in these devices in producing at least partial recovery of the light output, and that this may be a viable hardness assurance technique during a flight mission. (A.C.)

  1. Design of photonic crystal surface emitting lasers with indium-tin-oxide top claddings

    Science.gov (United States)

    Huang, Shen-Che; Hong, Kuo-Bin; Chiu, Han-Lun; Lan, Shao-Wun; Chang, Tsu-Chi; Li, Heng; Lu, Tien-Chang

    2018-02-01

    Electrically pumped GaAs-based photonic crystal surface emitting lasers were fabricated using a simple fabrication process by directly capping the indium-tin-oxide transparent conducting thin film as the top cladding layer upon a photonic crystal layer. Optimization of the separate-confinement heterostructures of a laser structure is crucial to improving characteristics by providing advantageous optical confinements. The turn-on voltage, series resistance, threshold current, and slope efficiency of the laser with a 100 × 100 μm2 photonic crystal area operated at room temperature were 1.3 V, 1.5 Ω, 121 mA, and 0.2 W/A, respectively. Furthermore, we demonstrated a single-lobed lasing wavelength of 928.6 nm at 200 mA and a wavelength redshift rate of 0.05 nm/K in temperature-dependent measurements. The device exhibited the maximum output power of approximately 400 mW at an injection current of 2 A; moreover, divergence angles of less than 1° for the unpolarized circular-shaped laser beam were measured at various injection currents. Overall, the low threshold current, excellent beam quality, small divergence, high output power, and high-operating-temperature (up to 343 K) of our devices indicate that they can potentially fill the requirements for next-generation light sources and optoelectronic devices.

  2. Spin-controlled ultrafast vertical-cavity surface-emitting lasers

    Science.gov (United States)

    Höpfner, Henning; Lindemann, Markus; Gerhardt, Nils C.; Hofmann, Martin R.

    2014-05-01

    Spin-controlled semiconductor lasers are highly attractive spintronic devices providing characteristics superior to their conventional purely charge-based counterparts. In particular, spin-controlled vertical-cavity surface emitting lasers (spin-VCSELs) promise to offer lower thresholds, enhanced emission intensity, spin amplification, full polarization control, chirp control and ultrafast dynamics. Most important, the ability to control and modulate the polarization state of the laser emission with extraordinarily high frequencies is very attractive for many applications like broadband optical communication and ultrafast optical switches. We present a novel concept for ultrafast spin-VCSELs which has the potential to overcome the conventional speed limitation for directly modulated lasers by the relaxation oscillation frequency and to reach modulation frequencies significantly above 100 GHz. The concept is based on the coupled spin-photon dynamics in birefringent micro-cavity lasers. By injecting spin-polarized carriers in the VCSEL, oscillations of the coupled spin-photon system can by induced which lead to oscillations of the polarization state of the laser emission. These oscillations are decoupled from conventional relaxation oscillations of the carrier-photon system and can be much faster than these. Utilizing these polarization oscillations is thus a very promising approach to develop ultrafast spin-VCSELs for high speed optical data communication in the near future. Different aspects of the spin and polarization dynamics, its connection to birefringence and bistability in the cavity, controlled switching of the oscillations, and the limitations of this novel approach will be analysed theoretically and experimentally for spin-polarized VCSELs at room temperature.

  3. Modification in oxidative processes in muscle tissues exposed to laser- and light-emitting diode radiation.

    Science.gov (United States)

    Monich, Victor A; Bavrina, Anna P; Malinovskaya, Svetlana L

    2018-01-01

    Exposure of living tissues to high-intensity red or near-infrared light can produce the oxidative stress effects both in the target zone and adjacent ones. The protein oxidative modification (POM) products can be used as reliable and early markers of oxidative stress. The contents of modified proteins in the investigated specimens can be evaluated by the 2,4-dinitrophenylhydrazine assay (the DNPH assay). Low-intensity red light is able to decrease the activity of oxidative processes and the DNPH assay data about the POM products in the biological tissues could show both an oxidative stress level and an efficiency of physical agent protection against the oxidative processes. Two control groups of white rats were irradiated by laser light, the first control group by red light and the second one by near-infrared radiation (NIR).Two experimental groups were consequently treated with laser and red low-level light-emitting diode radiation (LED). One of them was exposed to red laser light + LED and the other to NIR + LED. The fifth group was intact. Each group included ten animals. The effect of laser light was studied by methods of protein oxidative modifications. We measured levels of both induced and spontaneous POM products by the DNPH assay. The dramatic increase in levels of POM products in the control group samples when compared with the intact group data as well as the sharp decrease in the POM products in the experimental groups treated with LED low-level light were statistically significant (p ≤ 0.05). Exposure of skeletal muscles to high-intensity red and near-infrared laser light causes oxidative stress that continues not less than 3 days. The method of measurement of POM product contents by the DNPH assay is a reliable test of an oxidative process rate. Red low-intensity LED radiation can provide rehabilitation of skeletal muscle tissues treated with high-intensity laser light.

  4. Third-order optical nonlinearities in bulk and fs-laser inscribed waveguides in strengthened alkali aluminosilcate glass

    Science.gov (United States)

    Almeida, Gustavo F. B.; Almeida, Juliana M. P.; Martins, Renato J.; De Boni, Leonardo; Arnold, Craig B.; Mendonca, Cleber R.

    2018-01-01

    The development of advanced photonics devices requires materials with large optical nonlinearities, fast response times and high optical transparency, while at the same time allowing for the micro/nano-processing needed for integrated photonics. In this context, glasses have been receiving considerable attention given their relevant optical properties which can be specifically tailored by compositional control. Corning Gorilla® Glass (strengthened alkali aluminosilicate glass) is well-known for its use as a protective screen in mobile devices, and has attracted interest as a potential candidate for optical devices. Therefore, it is crucial not only to expand the knowledge on the fabrication of waveguides in Gorilla Glass under different regimes, but also to determine its nonlinear optical response, both using fs-laser pulses. Thus, this paper reports, for the first time, characterization of the third-order optical nonlinearities of Gorilla Glass, as well as linear and nonlinear characterization of waveguide written with femtosecond pulses under the low repetition rate regime (1 kHz).

  5. Changes induced in a ZnS:Cr-based electroluminescent waveguide structure by intrinsic near-infrared laser radiation

    International Nuclear Information System (INIS)

    Vlasenko, N. A.; Oleksenko, P. F.; Mukhlyo, M. A.; Veligura, L. I.

    2013-01-01

    The causes of changes that occur in a thin-film electroluminescent metal-insulator-semiconductor-insulator-metal waveguide structure based on ZnS:Cr (Cr concentration of ∼4 × 10 20 cm −3 ) upon lasing (λ ≈ 2.6 μm) and that induce lasing cessation are studied. It is established that lasing ceases because of light-scattering inhomogeneities formed in the structure and, hence, optical losses enhance. The origin of the inhomogeneities and the causes of their formation are clarified by studying the surface topology and the crystal structure of constituent layers of the samples before and after lasing. The studies are performed by means of atomic force microscopy and X-ray radiography. It is shown that a substantial increase in the sizes of grains on the surface of the structure is the manifestation of changes induced in the ZnS:Cr film by recrystallization. Recrystallization is initiated by local heating by absorbed laser radiation in existing Cr clusters and quickened by a strong electric field (>1 MV cm −1 ). The changes observed in the ZnS:Cr film are as follows: the textured growth of ZnS crystallites, an increase in the content of Cr clusters, and the appearance of some CrS and a rather high ZnO content. Some ways for improving the stability of lasing in the ZnS:Cr-based waveguide structures are proposed

  6. Directivity patterns and pulse profiles of ultrasound emitted by laser action on interface between transparent and opaque solids: Analytical theory

    International Nuclear Information System (INIS)

    Nikitin, Sergey M.; Tournat, Vincent; Chigarev, Nikolay; Castagnede, Bernard; Gusev, Vitalyi; Bulou, Alain; Zerr, Andreas

    2014-01-01

    The analytical theory for the directivity patterns of ultrasounds emitted from laser-irradiated interface between two isotropic solids is developed. It is valid for arbitrary combinations of transparent and opaque materials. The directivity patterns are derived both in two-dimensional and in three-dimensional geometries, by accounting for the specific features of the sound generation by the photo-induced mechanical stresses distributed in the volume, essential in the laser ultrasonics. In particular, the theory accounts for the contribution to the emitted propagating acoustic fields from the converted by the interface evanescent photo-generated compression-dilatation waves. The precise analytical solutions for the profiles of longitudinal and shear acoustic pulses emitted in different directions are proposed. The developed theory can be applied for dimensional scaling, optimization, and interpretation of the high-pressure laser ultrasonics experiments in diamond anvil cell

  7. The role of the gas/plasma plume and self-focusing in a gas-filled capillary discharge waveguide for high-power laser-plasma applications

    CERN Document Server

    Ciocarlan, C.; Islam, M. R.; Ersfeld, B.; Abuazoum, S.; Wilson, R.; Aniculaesei, C.; Welsh, G. H.; Vieux, G.; Jaroszynski, D. A.; 10.1063/1.4822333

    2013-01-01

    The role of the gas/plasma plume at the entrance of a gas-filled capillary discharge plasma waveguide in increasing the laser intensity has been investigated. Distinction is made between neutral gas and hot plasma plumes that, respectively, develop before and after discharge breakdown. Time-averaged measurements show that the on-axis plasma density of a fully expanded plasma plume over this region is similar to that inside the waveguide. Above the critical power, relativistic and ponderomotive selffocusing lead to an increase in the intensity, which can be nearly a factor of 2 compared with the case without a plume. When used as a laser plasma wakefield accelerator, the enhancement of intensity can lead to prompt electron injection very close to the entrance of the waveguide. Self-focusing occurs within two Rayleigh lengths of the waveguide entrance plane in the region, where the laser beam is converging. Analytical theory and numerical simulations show that, for a density of 3.01018 cm3, the peak normalized...

  8. Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

    Science.gov (United States)

    McInerney, John G.

    2016-03-01

    Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

  9. Nonlinear dynamic behaviors of an optically injected vertical-cavity surface-emitting laser

    International Nuclear Information System (INIS)

    Li Xiaofeng; Pan Wei; Luo Bin; Ma Dong; Wang Yong; Li Nuohan

    2006-01-01

    Nonlinear dynamics of a vertical-cavity surface-emitting laser (VCSEL) with external optical injection are studied numerically. We consider a master-slave configuration where the dynamic characteristics of the slave are affected by the optical injection from the master, and we also establish the corresponding Simulink model. The period-doubling route as well as the period-halving route is observed, where the regular, double-periodic, and chaotic pulsings are found. By adjusting the injection strength properly, the laser can be controlled to work at a given state. The effects of frequency detuning on the nonlinear behaviors are also investigated in terms of the bifurcation diagrams of photon density with the frequency detuning. For weak injection case, the nonlinear dynamics shown by the laser are quite different when the value of frequency detuning varies contrarily (positive and negative direction). If the optical injection is strong enough, the slave can be locked by the master even though the frequency detuning is relatively large

  10. Unresolved spectral structures emitted from heavy atom plasmas produced by short pulse laser

    International Nuclear Information System (INIS)

    Fraenkel, M.; Zigler, A.

    1999-01-01

    Spectra of rare earth elements emitted from ultra short pulse laser produced plasma were recorded using simultaneously high and low resolution, spectrometers. A study of the broad band emission of the Δn = 1 transitions in highly ionized Ba and Sm plasma showed that this band is completely unresolved. The spectra were analyzed using the LTE based on super-transition array (STA) model. The theory reconstructs the entire Ba spectrum using a single temperature and density, whereas for Sm the discrepancies between the theory and experiment are not reconcilable. The agreement in the Ba case is attributed to the fact that BaF 2 target is transparent to the laser's prepulse effects, producing a homogeneous dense plasma, whereas for Sm the dilute plasma created by the prepulse is far from LTE. The obtained results posses a significant implication to the applicability of the STA model, in particular for calculations of opacities and conversion of laser light to X-rays. (orig.)

  11. Unresolved spectral structures emitted from heavy atom plasmas produced by short pulse laser

    Energy Technology Data Exchange (ETDEWEB)

    Fraenkel, M.; Zigler, A. [Hebrew Univ., Jerusalem (Israel). Racah Inst. of Physics; Bar-Shalom, A.; Oreg, J. [Israel Atomic Energy Commission, Beersheba (Israel). Nuclear Research Center-Negev; Faenov, A.Ya.; Pikuz, T.A. [Multicharged Ions Spectra Data Center of VNIIFTRI, Russian Committee of Standards Moscow region (Russian Federation)

    1999-09-01

    Spectra of rare earth elements emitted from ultra short pulse laser produced plasma were recorded using simultaneously high and low resolution, spectrometers. A study of the broad band emission of the {delta}n = 1 transitions in highly ionized Ba and Sm plasma showed that this band is completely unresolved. The spectra were analyzed using the LTE based on super-transition array (STA) model. The theory reconstructs the entire Ba spectrum using a single temperature and density, whereas for Sm the discrepancies between the theory and experiment are not reconcilable. The agreement in the Ba case is attributed to the fact that BaF{sub 2} target is transparent to the laser's prepulse effects, producing a homogeneous dense plasma, whereas for Sm the dilute plasma created by the prepulse is far from LTE. The obtained results posses a significant implication to the applicability of the STA model, in particular for calculations of opacities and conversion of laser light to X-rays. (orig.)

  12. The simulation of thermal characteristics of 980 nm vertical cavity surface emitting lasers

    Science.gov (United States)

    Fang, Tianxiao; Cui, Bifeng; Hao, Shuai; Wang, Yang

    2018-02-01

    In order to design a single mode 980 nm vertical cavity surface emitting laser (VCSEL), a 2 μm output aperture is designed to guarantee the single mode output. The effects of different mesa sizes on the lattice temperature, the output power and the voltage are simulated under the condition of continuous working at room temperature, to obtain the optimum process parameters of mesa. It is obtained by results of the crosslight simulation software that the sizes of mesa radius are between 9.5 to 12.5 μm, which cannot only obtain the maximum output power, but also improve the heat dissipation of the device. Project supported by the Beijing Municipal Eduaction Commission (No. PXM2016_014204_500018) and the Construction of Scientific and Technological Innovation Service Ability in 2017 (No. PXM2017_014204_500034).

  13. Control of emitted light polarization in a 1310 nm dilute nitride spin-vertical cavity surface emitting laser subject to circularly polarized optical injection

    Energy Technology Data Exchange (ETDEWEB)

    Alharthi, S. S., E-mail: ssmalh@essex.ac.uk; Hurtado, A.; Al Seyab, R. K.; Henning, I. D.; Adams, M. J. [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Korpijarvi, V.-M.; Guina, M. [Optoelectronics Research Centre (ORC), Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland)

    2014-11-03

    We experimentally demonstrate the control of the light polarization emitted by a 1310 nm dilute nitride spin-Vertical Cavity Surface Emitting Laser (VCSEL) at room temperature. This is achieved by means of a combination of polarized optical pumping and polarized optical injection. Without external injection, the polarization of the optical pump controls that of the spin-VCSEL. However, the addition of the externally injected signal polarized with either left- (LCP) or right-circular polarization (RCP) is able to control the polarization of the spin-VCSEL switching it at will to left- or right-circular polarization. A numerical model has been developed showing a very high degree of agreement with the experimental findings.

  14. Fast pulsing dynamics of a vertical-cavity surface-emitting laser operating in the low-frequency fluctuation regime

    International Nuclear Information System (INIS)

    Sciamanna, M.; Rogister, F.; Megret, P.; Blondel, M.; Masoller, C.; Abraham, N. B.

    2003-01-01

    We analyze the dynamics of a vertical-cavity surface-emitting laser with optical feedback operating in the low-frequency fluctuation regime. By focusing on the fast pulsing dynamics, we show that the two linearly polarized modes of the laser exhibit two qualitatively different behaviors: they emit pulses in phase just after a power dropout and they emit pulses out of phase after the recovery process of the output power. As a consequence, two distinct statistical distributions of the fast pulsating total intensity are observed, either monotonically decaying from the noise level or peaked around the mean intensity value. We further show that gain self-saturation of the lasing transition strongly modifies the shape of the intensity distribution

  15. Fully relativistic free-electron laser in a completely filled waveguide

    International Nuclear Information System (INIS)

    Farokhi, B.; Abdykian, A.

    2005-01-01

    An analysis of the azimuthally symmetrical, high frequency eigenmodes of a cylindrical metallic waveguide completely filled with a relativistic magnetized plasma is presented. A relativistic nonlinear wave equation is derived in a form which includes the coupling of EH and HE modes due to the finite axial magnetic field. Relativistic equations that permit calculation of the dispersion curves for four families of electromagnetic and electrostatic modes are derived. Numerical analysis is conducted to study the relativistic dispersion curves of various modes as a function of axial magnetic field B 0 . This treatment is shown that the dispersion curves dependent to γ in low frequency which is ignored in previous work. It is found that in drawn figures shown difference between relativistic and non-relativistic cases. The former each figure is treated for two orbit groups. This study is benefiting to facilities the development of devices for generation of high-power electromagnetic radiation, charged particle acceleration, and other applications of plasma waveguide. (author)

  16. Turnable Semiconductor Laser Spectroscopy in Hollow Optical Waveguides, Phase II SBIR

    Energy Technology Data Exchange (ETDEWEB)

    Gregory J. Fetzer, Ph.D.

    2001-12-24

    In this study a novel optical trace gas sensor based on a perforated hollow waveguide (PHW) was proposed. The sensor has been given the acronym ESHOW for Environmental Sensor using Hollow Optical Waveguides. Realizations of the sensor have demonstrated rapid response time (<2s), low minimum detection limits (typically around 3 x 10-5 absorbance). Operation of the PHW technology has been demonstrated in the near-infrared (NIR) and mid0infrared (MIR) regions of the spectrum. Simulation of sensor performance provided in depth understanding of the signals and signal processing required to provide high sensitivity yet retain rapid response to gas changes. A dedicated sensor electronics and software foundation were developed during the course of the Phase II effort. Commercial applications of the sensor are ambient air and continuous emissions monitoring, industrial process control and hazardous waste site monitoring. There are numerous other applications for such a sensor including medical diagnosis and treatment, breath analysis for legal purposes, water quality assessment, combustion diagnostics, and chemical process control. The successful completion of Phase II resulted in additional funding of instrument development by the Nations Institute of Heath through a Phase I SBIR grant and a strategic teaming relationship with a commercial manufacture of medical instrumentation. The purpose of the NIH grant and teaming relationship is to further develop the sensor to monitor NO in exhaled breath for the purposes of asthma diagnosis.

  17. Ultraviolet Laser SQUID Microscope for GaN Blue Light Emitting Diode Testing

    International Nuclear Information System (INIS)

    Daibo, M; Kamiwano, D; Kurosawa, T; Yoshizawa, M; Tayama, N

    2006-01-01

    We carried out non-contacting measurements of photocurrent distributions in GaN blue light emitting diode (LED) chips using our newly developed ultraviolet (UV) laser SQUID microscope. The UV light generates the photocurrent, and then the photocurrent induces small magnetic fields around the chip. An off-axis arranged HTS-SQUID magnetometer is employed to detect a vector magnetic field whose typical amplitude is several hundred femto-tesla. Generally, it is difficult to obtain Ohmic contacts for p-type GaN because of the low hole concentration in the p-type epitaxial layer and the lack of any available metal with a higher work function compared with the p-type GaN. Therefore, a traditional probecontacted electrical test is difficult to conduct for wide band gap semiconductors without an adequately annealed electrode. Using the UV-laser SQUID microscope, the photocurrent can be measured without any electrical contact. We show the photocurrent vector map which was reconstructed from measured magnetic fields data. We also demonstrate how we found the position of a defect of the electrical short circuits in the LED chip

  18. Hollow waveguide cavity ringdown spectroscopy

    Science.gov (United States)

    Dreyer, Chris (Inventor); Mungas, Greg S. (Inventor)

    2012-01-01

    Laser light is confined in a hollow waveguide between two highly reflective mirrors. This waveguide cavity is used to conduct Cavity Ringdown Absorption Spectroscopy of loss mechanisms in the cavity including absorption or scattering by gases, liquid, solids, and/or optical elements.

  19. InAs(PSb)-based ``W'' quantum well laser diodes emitting near 3.3 μm

    Science.gov (United States)

    Joullié, A.; Skouri, E. M.; Garcia, M.; Grech, P.; Wilk, A.; Christol, P.; Baranov, A. N.; Behres, A.; Kluth, J.; Stein, A.; Heime, K.; Heuken, M.; Rushworth, S.; Hulicius, E.; Simecek, T.

    2000-05-01

    Mid-infrared laser diodes with an active region consisting of five "W" InAsSb/InAsP/InAsSb/InAsPSb quantum wells and broad InAsPSb waveguide were fabricated by metalorganic vapor phase epitaxy on InAs substrates. Laser emission was demonstrated at 3.3 μm up to 135 K from asymmetrical structures having n-type InAsPSb and p-type InPSb cladding layers. The devices operated in pulsed regime at 3.3 μm, with a lowest threshold current density of 120 A/cm2 at 90 K, and an output power efficiency of 31 mW/facet/A. The characteristic temperature was 35 K.

  20. New CO2 laser waveguide systems: advances in surgery of tracheal stenosis

    Science.gov (United States)

    Stasche, Norbert; Bernecker, Frank; Hoermann, Karl

    1996-01-01

    The carbon dioxide laser is a well established tool in the surgical treatment of laryngeal and tracheal stenosis. Usually the laser beam is applied by a microscope/micromanipulator device. Different types of rigid laryngoscopes and bronchoscopes provide access to nearly every area of larynx, trachea and main bronchi. In order to be treated with this equipment the target tissue has to be in a straight optical axis with the laser beam output at the micromanipulator. We report about one patient who presented with severe dyspnea due to granulation tissue directly below his left vocal cord. He was suffering from tracheomalacia for several years and was successfully treated by tracheostomy and a Montgomery's silicone T-tube as a stent. Then granulation tissue blocked the upper orifice of the Montgomery's T-tube. First removal by a carbon dioxide laser beam through the laryngoscope would have required sacrificing his intact left vocal cord. We removed the obstructing tissue by using the ArthroLaseTM System: the carbon dioxide laser beam was conducted through a 90 degree bent rigid probe, using the tracheostomy as an access. This ArthroLaseTM System was originally designed for arthroscopic surgery. In this special case however it successfully extends the use of the carbon dioxide laser in otolaryngology.

  1. Design and Fabrication of 850 and 980 nm Vertical Cavity Surface Emitting Laser

    National Research Council Canada - National Science Library

    Das, N

    2004-01-01

    .... VCSELs on GaAs substrates were grown by the molecular beam epitaxy technique. In this report we present detailed procedures to design and fabricate 850-nm top-emitting and 980-nm bottom-emitting VCSELs...

  2. Ammonia detection using hollow waveguide enhanced laser absorption spectroscopy based on a 9.56 μm quantum cascade laser

    Science.gov (United States)

    Li, Jinyi; Yang, Sen; Wang, Ruixue; Du, Zhenhui; Wei, Yingying

    2017-10-01

    Ammonia (NH3) is the most abundant alkalescency trace gas in the atmosphere having a foul odor, which is produced by both natural and anthropogenic sources. Chinese Emission Standard for Odor Pollutants has listed NH3 as one of the eight malodorous pollutants since 1993, specifying the emission concentration less than 1 mg/m3 (1.44ppmv). NH3 detection continuously from ppb to ppm levels is significant for protection of environmental atmosphere and safety of industrial and agricultural production. Tunable laser absorption spectroscopy (TLAS) is an increasingly important optical method for trace gas detection. TLAS do not require pretreatment and accumulation of the concentration of the analyzed sample, unlike, for example, more conventional methods such as mass spectrometry or gas chromatography. In addition, TLAS can provide high precision remote sensing capabilities, high sensitivities and fast response. Hollow waveguide (HWG) has recently emerged as a novel concept serving as an efficient optical waveguide and as a highly miniaturized gas cell. Among the main advantages of HWG gas cell compared with conventional multi-pass gas cells is the considerably decreased sample which facilitates gas exchanging. An ammonia sensor based on TLAS using a 5m HWG as the gas cell is report here. A 9.56μm, continuous-wave, distributed feed-back (DFB), room temperature quantum cascade laser (QCL), is employed as the optical source. The interference-free NH3 absorption line located at 1046.4cm-1 (λ 9556.6nm) is selected for detection by analyzing absorption spectrum from 1045-1047 cm-1 within the ν2 fundamental absorption band of ammonia. Direct absorption spectroscopy (DAS) technique is utilized and the measured spectral line is fitted by a simulation model by HITRAN database to obtain the NH3 concentration. The sensor performance is tested with standard gas and the result shows a 1σ minimum detectable concentration of ammonia is about 200 ppb with 1 sec time resolution

  3. Effect of optical waveguiding mechanism on the lasing action of chirped InAs/AlGaInAs/InP quantum dash lasers

    KAUST Repository

    Khan, Mohammed Zahed Mustafa

    2013-03-04

    We report on the atypical emission dynamics of InAs/AlGaInAs/InP quantum dash (Qdash) lasers employing varying AlGaInAs barrier thickness (multilayer-chirped structure). The analysis is carried out via fabry-perot (FP) ridge (RW) and stripe waveguide (SW) laser characterization corresponding to the index and gain guided waveguiding mechanisms, respectively, and at different current pulse width operations. The laser emissions are found to emerge from the size dispersion of the Qdash ensembles across the four Qdash-barrier stacks, and governed by their overlapping quasi-zero dimensional density of states (DOS). The spectral characteristics demonstrated prominent dependence on the waveguiding mechanism at quasi-continuous wave (QCW) operation (long pulse width). The RW geometry showed unusual spectral split in the emission spectra on increasing current injection while the SW geometry showed typical broadening of lasing spectra. These effects were attributed to the highly inhomogeneous active region, the nonequilibrium carrier distribution and the energy exchange between Qdash groups across the Qdash-barrier stacks. Furthermore, QCW operation showed a progressive red shift of emission spectra with injection current, resulted from active region heating and carrier depopulation, which was observed to be minimal in the short pulse width (SPW) operation. Our investigation sheds light on the device physics of chirped Qdash laser structure and provides guidelines for further optimization in obtaining broad-gain laser diodes. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  4. Operation of a novel hot-electron vertical-cavity surface-emitting laser

    Science.gov (United States)

    Balkan, Naci; O'Brien-Davies, Angela; Thoms, A. B.; Potter, Richard J.; Poolton, Nigel; Adams, Michael J.; Masum, J.; Bek, Alpan; Serpenguzel, Ali; Aydinli, Atilla; Roberts, John S.

    1998-07-01

    The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is novel surface emitter consisting of a GaAs quantum well, within the depletion region, on the n side of Ga1-xAlxAs p- n junction. It utilizes hot electron transport parallel to the layers and injection of hot electron hole pairs into the quantum well through a combination of mechanisms including tunnelling, thermionic emission and diffusion of `lucky' carriers. Super Radiant HELLISH-1 is an advanced structure incorporating a lower distributed Bragg reflector (DBR). Combined with the finite reflectivity of the upper semiconductor-air interface reflectivity it defines a quasi- resonant cavity enabling emission output from the top surface with a higher spectral purity. The output power has increased by two orders of magnitude and reduced the full width at half maximum (FWHM) to 20 nm. An upper DBR added to the structure defines HELLISH-VCSEL which is currently the first operational hot electron surface emitting laser and lases at room temperature with a 1.5 nm FWHM. In this work we demonstrate and compare the operation of UB-HELLISH-1 and HELLISH-VCSEL using experimental and theoretical reflectivity spectra over an extensive temperature range.

  5. Broadening of hydrogenic X rays emitted by a laser-produced plasma

    International Nuclear Information System (INIS)

    Nguyen, Hoe; Grumberg, J.; Caby, M.; Leboucher, E.; Coulaud, G.

    1980-01-01

    This study is devoted to X-rays broadened by laser impact or implosion. In addition to usual broadening processes due to the high and low components of plasma microfield, we have examined the influence of the self-generated magnetic field B which is correlated to the Doppler effect by the motional electric field. Concerning the interaction between plasma electrons and radiating ions with high charge number Zsub(E), it is shown that the curvature of electron trajectories must be taken into account in the broadening operator calculation. The influence of this curvature consists in reducing the contribution of dipolar interaction and enhancing the contribution of multipolar interactions with higher order. As a particular consequence on the half-width of Lyman-α-lines we have found values ten times larger than those obtained from the usual dipolar approximation. In the other hand, spectral lines emitted from the plasma critical region exhibits a strong self-generated magnetic field effect. Principally, it consists in polarizing the spectral profiles and introducing a large dependence with respect to the observation direction k. Particularly, profiles observed in the direction parallel to the magnetic field exhibit a deep central minimum which must be taken into account in a quantitative study of the line absorption properties [fr

  6. Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

    KAUST Repository

    Leonard, J. T.; Cohen, D. A.; Yonkee, B. P.; Farrell, R. M.; Margalith, T.; Lee, S.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.

    2015-01-01

    © 2015 AIP Publishing LLC. We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3nm quantum well width, 1nm barriers, a 5nm electron-blocking layer, and a 6.95- λ total cavity thickness. These advances yield a single longitudinal mode 406nm nonpolar VCSEL with a low threshold current density (∼16kA/cm2), a peak output power of ∼12μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

  7. Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

    KAUST Repository

    Leonard, J. T.

    2015-07-06

    © 2015 AIP Publishing LLC. We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3nm quantum well width, 1nm barriers, a 5nm electron-blocking layer, and a 6.95- λ total cavity thickness. These advances yield a single longitudinal mode 406nm nonpolar VCSEL with a low threshold current density (∼16kA/cm2), a peak output power of ∼12μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.

  8. Unstable propagation of a Gaussian laser beam in a plasma waveguide

    International Nuclear Information System (INIS)

    Feit, M.D.; Maiden, D.E.

    1976-01-01

    Laser heating of long magnetically confined plasma columns to fusion temperatures requires propagation of a trapped laser beam over considerable distances. The present paper employs the parabolic approximation to the wave equation to analyze the propagation of a Gaussian beam through a plasma with a parabolic transverse density profile. Although propagation is stable in the axially uniform case, exhibiting alternate focusing and defocusing of the beam, it is unstable to small axial perturbations of certain wavelengths. In particular, an exponentially growing beam radius results from perturbations at wavelengths near that associated with the alternate focusing and defocusing mentioned above

  9. Fiber‐free coupling between bulk laser beams and on‐chip polymer‐based multimode waveguides

    DEFF Research Database (Denmark)

    Jensen, Thomas Glasdam; Nielsen, Lars Bue; Kutter, Jörg Peter

    2011-01-01

    light from a bulk beam to on‐chip waveguides and back into a bulk beam again. Using this setup, as much as 20% of the light coming from the source can be retrieved after passing through the on‐chip waveguides. The proposed setup is based on a pin‐aided alignment system that makes it possible to change...

  10. The Theory for the Dielectric Slab Waveguide with Complex Refractive Index Applied to GaAs Lasers

    DEFF Research Database (Denmark)

    Buus, Jens

    1977-01-01

    In this paper we investigate the homogeneous dielectric slab waveguide in the case of complex dielectric constants. A method for calculating the field distribution in a dielectric waveguide with an arbitrary symmetrical variation in the refractive index is developed, and some of the results are p...

  11. Progress in metal-insulator-metal waveguide lasers at near-infrared wavelengths

    NARCIS (Netherlands)

    Marell, M.J.H.; Hill, M.T.

    2009-01-01

    Strong light con¯nement can be achieved in metallic cavities which can con¯ne light to volumes with dimensions considerably smaller than the wavelength of light. It was commonly believed, however, that the high losses in metals are prohibitive for laser peration in metallic nano-cavities. Recently

  12. The effect of asymmetric barrier layers in the waveguide region on power characteristics of QW lasers

    DEFF Research Database (Denmark)

    Zubov, F. I.; Zhukov, A. E.; Shernyakov, Yu M.

    2015-01-01

    Current-voltage and light-current characteristics of quantum-well lasers have been studied at high drive currents. The introduction of asymmetric barrier layers adjacent to the active region caused a significant suppression of the nonlinearity in the light-current characteristic and an increase...

  13. A DC excited waveguide multibeam CO2 laser using high frequency ...

    Indian Academy of Sciences (India)

    High power industrial multibeam CO2 lasers consist of a large number of closely packed ... by producing pre-ionization using an auxiliary high frequency pulsed ... of few kilowatts output power, multibeam technique is used [2]. .... gas mixture of CO2, N2 and He enters in each discharge tube individually from .... Commercial.

  14. Highly Selective Volatile Organic Compounds Breath Analysis Using a Broadly-Tunable Vertical-External-Cavity Surface-Emitting Laser.

    Science.gov (United States)

    Tuzson, Béla; Jágerská, Jana; Looser, Herbert; Graf, Manuel; Felder, Ferdinand; Fill, Matthias; Tappy, Luc; Emmenegger, Lukas

    2017-06-20

    A broadly tunable mid-infrared vertical-external-cavity surface-emitting laser (VECSEL) is employed in a direct absorption laser spectroscopic setup to measure breath acetone. The large wavelength coverage of more than 30 cm -1 at 3.38 μm allows, in addition to acetone, the simultaneous measurement of isoprene, ethanol, methanol, methane, and water. Despite the severe spectral interferences from water and alcohols, an unambiguous determination of acetone is demonstrated with a precision of 13 ppbv that is achieved after 5 min averaging at typical breath mean acetone levels in synthetic gas samples mimicking human breath.

  15. 4.5 μm wavelength vertical external cavity surface emitting laser operating above room temperature

    Science.gov (United States)

    Rahim, M.; Khiar, A.; Felder, F.; Fill, M.; Zogg, H.

    2009-05-01

    A midinfrared vertical external cavity surface emitting laser with 4.5 μm emission wavelength and operating above room temperature has been realized. The active part consists of a single 850 nm thick epitaxial PbSe gain layer. It is followed by a 2 1/2 pair Pb1-yEuyTe/BaF2 Bragg mirror. No microstructural processing is needed. Excitation is done optically with a 1.5 μm wavelength laser. The device operates up to 45 °C with 100 ns pulses and delivers 6 mW output power at 27 °C heat-sink temperature.

  16. X-ray spectrum in the range (6-12) A emitted by laser-produced plasma of samarium

    International Nuclear Information System (INIS)

    Louzon, Einat; Henis, Zohar; Levi, Izhak; Hurvitz, Gilad; Ehrlich, Yosi; Fraenkel, Moshe; Maman, Shlomo; Mandelbaum, Pinchas

    2009-01-01

    A detailed analysis of the x-ray spectrum emitted by laser-produced plasma of samarium (6-12 A) is presented, using ab initio calculations with the HULLAC relativistic code and isoelectronic considerations. Resonance 3d-nf (n=4 to 7), 3p-4d, 3d-4p, and 3p-4s transitions in Ni samarium ions and in neighboring ionization states (from Mn to Zn ions) were identified. The experiment results show changes in the fine details of the plasma spectrum for different laser intensities.

  17. High-energy coherent terahertz radiation emitted by wide-angle electron beams from a laser-wakefield accelerator

    Science.gov (United States)

    Yang, Xue; Brunetti, Enrico; Jaroszynski, Dino A.

    2018-04-01

    High-charge electron beams produced by laser-wakefield accelerators are potentially novel, scalable sources of high-power terahertz radiation suitable for applications requiring high-intensity fields. When an intense laser pulse propagates in underdense plasma, it can generate femtosecond duration, self-injected picocoulomb electron bunches that accelerate on-axis to energies from 10s of MeV to several GeV, depending on laser intensity and plasma density. The process leading to the formation of the accelerating structure also generates non-injected, sub-picosecond duration, 1–2 MeV nanocoulomb electron beams emitted obliquely into a hollow cone around the laser propagation axis. These wide-angle beams are stable and depend weakly on laser and plasma parameters. Here we perform simulations to characterise the coherent transition radiation emitted by these beams if passed through a thin metal foil, or directly at the plasma–vacuum interface, showing that coherent terahertz radiation with 10s μJ to mJ-level energy can be produced with an optical to terahertz conversion efficiency up to 10‑4–10‑3.

  18. High-power Yb- and Tm-doped double tungstate channel waveguide lasers

    NARCIS (Netherlands)

    van Dalfsen, Koop; Geskus, D.; Ay, F.; Worhoff, Kerstin; Aravazhi, S.; Pollnau, Markus

    The potassium double tungstates KGd(WO4)2, KY(WO4)2, and KLu(WO4)2 are excellent candidates for solid-state lasers because of their high refractive index of ~2.0-2.1, the large transition cross-sections of rare-earth (RE3+) ions doped into these hosts, and a reasonably large thermal conductivity of

  19. Ultrafast direct laser writing of cladding waveguides in the 0.8CaSiO{sub 3}-0.2Ca{sub 3}(PO{sub 4}){sub 2} eutectic glass doped with Nd{sup 3+} ions

    Energy Technology Data Exchange (ETDEWEB)

    Martínez de Mendívil, J., E-mail: jon.martinez@uam.es; Lifante, G. [Departamento de Física de Materiales, C-04, Facultad de Ciencias, Universidad Autónoma de Madrid, 28.049 Madrid (Spain); Sola, D.; Peña, J. I. [Departamento de Ciencia y Tecnología de Materiales y Fluidos, Instituto de Ciencia de Materiales de Aragón, Universidad de Zaragoza-CSIC, 50.018 Zaragoza (Spain); Vázquez de Aldana, J. R. [Grupo de Investigación en Microprocesado de Materiales con Láser, Departamento de Física Aplicada, Universidad de Salamanca, 37.008 Salamanca (Spain); Aza, A. H. de; Pena, P. [Instituto de Cerámica y Vidrio-CSIC, 28.049 Madrid (Spain)

    2015-01-28

    We report on tubular cladding optical waveguides fabricated in Neodymium doped Wollastonite-Tricalcium Phosphate glass in the eutectic composition. The glass samples were prepared by melting the eutectic powder mixture in a Pt-Rh crucible at 1600 °C and pouring it in a preheated brass mould. Afterwards, the glass was annealed to relieve the inner stresses. Cladding waveguides were fabricated by focusing beneath the sample surface using a pulsed Ti:sapphire laser with a pulsewidth of 120 fs working at 1 kHz. The optical properties of these waveguides have been assessed in terms of near-field intensity distribution and transmitted power, and these results have been compared to previously reported waveguides with double-line configuration. Optical properties have also been studied as function of the temperature. Heat treatments up to 700 °C were carried out to diminish colour centre losses where waveguide's modes and transmitted power were compared in order to establish the annealing temperature at which the optimal optical properties were reached. Laser experiments are in progress to evaluate the ability of the waveguides for 1064 nm laser light generation under 800 nm optical pumping.

  20. Optical Injection Locking of Vertical Cavity Surface-Emitting Lasers: Digital and Analog Applications

    Science.gov (United States)

    Parekh, Devang

    With the rise of mobile (cellphones, tablets, notebooks, etc.) and broadband wireline communications (Fiber to the Home), there are increasing demands being placed on transmitters for moving data from device to device and around the world. Digital and analog fiber-optic communications have been the key technology to meet this challenge, ushering in ubiquitous Internet and cable TV over the past 20 years. At the physical layer, high-volume low-cost manufacturing of semiconductor optoelectronic devices has played an integral role in allowing for deployment of high-speed communication links. In particular, vertical cavity surface emitting lasers (VCSEL) have revolutionized short reach communications and are poised to enter more markets due to their low cost, small size, and performance. However, VCSELs have disadvantages such as limited modulation performance and large frequency chirp which limits fiber transmission speed and distance, key parameters for many fiber-optic communication systems. Optical injection locking is one method to overcome these limitations without re-engineering the VCSEL at the device level. By locking the frequency and phase of the VCSEL by the direct injection of light from another laser oscillator, improved device performance is achieved in a post-fabrication method. In this dissertation, optical injection locking of VCSELs is investigated from an applications perspective. Optical injection locking of VCSELs can be used as a pathway to reduce complexity, cost, and size of both digital and analog fiber-optic communications. On the digital front, reduction of frequency chirp via bit pattern inversion for large-signal modulation is experimentally demonstrated showing up to 10 times reduction in frequency chirp and over 90 times increase in fiber transmission distance. Based on these results, a new reflection-based interferometric model for optical injection locking was established to explain this phenomenon. On the analog side, the resonance

  1. High-power, format-flexible, 885-nm vertical-cavity surface-emitting laser arrays

    Science.gov (United States)

    Wang, Chad; Talantov, Fedor; Garrett, Henry; Berdin, Glen; Cardellino, Terri; Millenheft, David; Geske, Jonathan

    2013-03-01

    High-power, format flexible, 885 nm vertical-cavity surface-emitting laser (VCSEL) arrays have been developed for solid-state pumping and illumination applications. In this approach, a common VCSEL size format was designed to enable tiling into flexible formats and operating configurations. The fabrication of a common chip size on ceramic submount enables low-cost volume manufacturing of high-power VCSEL arrays. This base VCSEL chip was designed to be 5x3.33 mm2, and produced up to 50 Watts of peak continuous wave (CW) power. To scale to higher powers, multiple chips can be tiled into a combination of series or parallel configurations tailored to the application driver conditions. In actively cooled CW operation, the VCSEL array chips were packaged onto a single water channel cooler, and we have demonstrated 0.5x1, 1x1, and 1x3 cm2 formats, producing 150, 250, and 500 Watts of peak power, respectively, in under 130 A operating current. In QCW operation, the 1x3 cm2 VCSEL module, which contains 18 VCSEL array chips packaged on a single water cooler, produced over 1.3 kW of peak power. In passively cooled packages, multiple chip configurations have been developed for illumination applications, producing over 300 Watts of peak power in QCW operating conditions. These VCSEL chips use a substrate-removed structure to allow for efficient thermal heatsinking to enable high-power operation. This scalable, format flexible VCSEL architecture can be applied to wavelengths ranging from 800 to 1100 nm, and can be used to tailor emission spectral widths and build high-power hyperspectral sources.

  2. High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)

    Science.gov (United States)

    Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Sakharov, A. V.; Ustinov, V. M.

    2018-01-01

    The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called "vertical-cavity surface-emitting lasers") under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ˜30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

  3. Angular distribution of atoms emitted from a SrZrO3 target by laser ablation under different laser fluences and oxygen pressures

    International Nuclear Information System (INIS)

    Konomi, I.; Motohiro, T.; Azuma, H.; Asaoka, T.; Nakazato, T.; Sato, E.; Shimizu, T.; Fujioka, S.; Sarukura, N.; Nishimura, H.

    2010-01-01

    Angular distributions of atoms emitted by laser ablation of perovskite-type oxide SrZrO 3 have been investigated using electron probe microanalysis with wavelength-dispersive spectroscopy and charge-coupled device photography with an interference filter. Each constituent element has been analyzed as a two-modal distribution composed of a broad cos m θ distribution and a narrow cos n θ distribution. The exponent n characterizes the component of laser ablation while the exponent m characterizes that of thermal evaporation, where a larger n or m means a narrower angular distribution. In vacuum, O (n=6) showed a broader distribution than those of Sr (n=16) and Zr (n=17), and Sr + exhibited a spatial distribution similar to that of Sr. As the laser fluence was increased from 1.1 to 4.4 J/cm 2 , the angular distribution of Sr became narrower. In the laser fluence range of 1.1-4.4 J/cm 2 , broadening of the angular distribution of Sr was observed only at the fluence of 1.1 J/cm 2 under the oxygen pressure of 10 Pa. Monte Carlo simulations were performed to estimate approximately the energy of emitted atoms, focusing on the broadening of the angular distribution under the oxygen pressure of 10 Pa. The energies of emitted atoms were estimated to be 1-20 eV for the laser fluence of 1.1 J/cm 2 , and more than 100 eV for 2.2 and 4.4 J/cm 2 .

  4. Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers

    Energy Technology Data Exchange (ETDEWEB)

    Willander, M; Nur, O; Zhao, Q X; Yang, L L [Department of Science and Technology, Linkoeping University, SE-601 74 Norrkoeping (Sweden); Lorenz, M; Cao, B Q; Zuniga Perez, J; Czekalla, C; Zimmermann, G; Grundmann, M [Institut fuer Experimentelle Physik II, Universitaet Leipzig, Linnestrasse 5, D-04103 Leipzig (Germany); Bakin, A; Behrends, A; Al-Suleiman, M; El-Shaer, A; Che Mofor, A; Postels, B; Waag, A [Institute of Semiconductor Technology, Technical University of Braunschweig, Hans-Sommer-Strasse 66, D-38106 Braunschweig (Germany); Boukos, N; Travlos, A [National Center for Scientific Research ' Demokritos' , Institute of Materials Science, GR 15310 Agia Paraskevi Attikis, Athens (Greece); Kwack, H S, E-mail: magwi@itn.liu.s [CEA-CNRS Group ' Nanophysique et Semiconducteurs' , Institut Neel, CNRS and Universit' e Joseph Fourier, F-38042 Grenoble (France)

    2009-08-19

    Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its nanostructures, holds promise for the development of photonic devices. The recent advances in growth of ZnO nanorods are discussed. Results from both low temperature and high temperature growth approaches are presented. The techniques which are presented include metal-organic chemical vapour deposition (MOCVD), vapour phase epitaxy (VPE), pulse laser deposition (PLD), vapour-liquid-solid (VLS), aqueous chemical growth (ACG) and finally the electrodeposition technique as an example of a selective growth approach. Results from structural as well as optical properties of a variety of ZnO nanorods are shown and analysed using different techniques, including high resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL), for both room temperature and for low temperature performance. These results indicate that the grown ZnO nanorods possess reproducible and interesting optical properties. Results on obtaining p-type doping in ZnO micro- and nanorods are also demonstrated using PLD. Three independent indications were found for p-type conducting, phosphorus-doped ZnO nanorods: first, acceptor-related CL peaks, second, opposite transfer characteristics of back-gate field effect transistors using undoped and phosphorus doped wire channels, and finally, rectifying I-V characteristics of ZnO:P nanowire/ZnO:Ga p-n junctions. Then light emitting diodes (LEDs) based on n-ZnO nanorods combined with different technologies (hybrid technologies) are suggested and the recent electrical, as well as electro-optical, characteristics of these LEDs are shown and discussed. The hybrid LEDs reviewed and discussed here are mainly presented for two groups: those based on n-ZnO nanorods and p-type crystalline substrates, and those based on n-ZnO nanorods and p-type amorphous substrates. Promising electroluminescence

  5. Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

    Science.gov (United States)

    Fill, Matthias; Debernardi, Pierluigi; Felder, Ferdinand; Zogg, Hans

    2013-11-01

    Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

  6. Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Fill, Matthias [ETH Zurich, Laser Spectroscopy and Sensing Lab, 8093 Zurich (Switzerland); Phocone AG, 8005 Zurich (Switzerland); Debernardi, Pierluigi [IEIIT-CNR, Torino 10129 (Italy); Felder, Ferdinand [Phocone AG, 8005 Zurich (Switzerland); Zogg, Hans [ETH Zurich (Switzerland)

    2013-11-11

    Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

  7. Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors

    KAUST Repository

    Lee, Changmin; Shen, Chao; Cozzan, Clayton; Farrell, Robert M.; Speck, James S.; Nakamura, Shuji; Ooi, Boon S.; DenBaars, Steven P.

    2017-01-01

    Data communication based on white light generated using a near-ultraviolet (NUV) laser diode (LD) pumping red-, green-, and blue-emitting (RGB) phosphors was demonstrated for the first time. A III-nitride laser diode (LD) on a semipolar (2021

  8. Surface plasmon quantum cascade lasers as terahertz local oscillators

    NARCIS (Netherlands)

    Hajenius, M.; Khosropanah, P.; Hovenier, J. N.; Gao, J. R.; Klapwijk, T. M.; Barbieri, S.; Dhillon, S.; Filloux, P.; Sirtori, C.; Ritchie, D. A.; Beere, H. E.

    2008-01-01

    We characterize a heterodyne receiver based on a surface-plasmon waveguide quantum cascade laser (QCL) emitting at 2.84 THz as a local oscillator, and an NbN hot electron bolometer as a mixer. We find that the envelope of the far-field pattern of the QCL is diffraction-limited and superimposed onto

  9. Future prospects of laser diodes and fiber lasers

    International Nuclear Information System (INIS)

    Ueda, Ken-ichi

    2000-01-01

    For the next century we should develop new concepts for coherent control of light generation and propagation. Owing to the recent development of ultra fine structures in semiconductor lasers, fiber lasers, and various kinds of waveguide structure, we can make optical devices which control the light propagation artificially. But, the phase locking and phase control of multiple laser oscillators are one of the most important directions of laser science and technology. The coherent summation has been a dream of laser since 1960. Is it possible to solve this old and quite challenging problem for laser science? This is also a very basic concept because the laser action based on the stimulated emission is the process of coherent summation of huge number of photons emitted from individual atoms. In this paper, I discuss the fundamental direction of laser research in the next ten or twenty years. The active optics and laser technology should be combined intrinsically in near future. (author)

  10. BeZnCdSe quantum-well ridge-waveguide laser diodes under low threshold room-temperature continuous-wave operation

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Jijun [Shanghai Key Laboratory of Modern Optical System, Engineering Research Center of Optical Instrument and System (Ministry of Education), School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, 516 Jungong Road, Shanghai 200093 (China); Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Akimoto, Ryoichi, E-mail: r-akimoto@aist.go.jp [Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)

    2015-10-19

    Low threshold current ridge-waveguide BeZnCdSe quantum-well laser diodes (LDs) have been developed by completely etching away the top p-type BeMgZnSe/ZnSe:N short-period superlattice cladding layer, which can suppress the leakage current that flows laterally outside of the electrode. The waveguide LDs are covered with a thick SiO{sub 2} layer and planarized with chemical-mechanical polishing and a reactive ion etching process. Room-temperature lasing under continuous-wave condition is achieved with the laser cavity formed by the cleaved waveguide facets coated with high-reflectivity dielectric films. For a 4 μm-wide green LD lasing around a wavelength of 535 nm, threshold current and voltage of 7.07 mA and 7.89 V are achieved for a cavity length of 300 μm, and the internal differential quantum efficiency, internal absorption loss, gain constant, and nominal transparency current density are estimated to be 27%, 4.09 cm{sup −1}, 29.92 (cm × μm)/kA and 6.35 kA/(cm{sup 2 }× μm), respectively. This compact device can realize a significantly improved performance with much lower threshold power consumption, which would benefit the potential application for ZnSe-based green LDs as light sources in full-color display and projector devices installed in consumer products such as pocket projectors.

  11. Exploiting broad-area surface emitting lasers to manifest the path-length distributions of finite-potential quantum billiards.

    Science.gov (United States)

    Yu, Y T; Tuan, P H; Chang, K C; Hsieh, Y H; Huang, K F; Chen, Y F

    2016-01-11

    Broad-area vertical-cavity surface-emitting lasers (VCSELs) with different cavity sizes are experimentally exploited to manifest the influence of the finite confinement strength on the path-length distribution of quantum billiards. The subthreshold emission spectra of VCSELs are measured to obtain the path-length distributions by using the Fourier transform. It is verified that the number of the resonant peaks in the path-length distribution decreases with decreasing the confinement strength. Theoretical analyses for finite-potential quantum billiards are numerically performed to confirm that the mesoscopic phenomena of quantum billiards with finite confinement strength can be analogously revealed by using broad-area VCSELs.

  12. Vertical‐cavity surface‐emitting laser based digital coherent detection for multigigabit long reach passive optical links

    DEFF Research Database (Denmark)

    Rodes Lopez, Roberto; Jensen, Jesper Bevensee; Zibar, Darko

    2011-01-01

    We report on experimental demonstration of digital coherent detection based on a directly modulated vertical‐cavity surface‐emitting laser with bit rate up to 10 Gbps. This system allows a cooler‐less, free running, and unamplified transmission without optical dispersion compensation up to 105 km...... at 5 Gbps long reach passive optical links. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:2462–2464, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26331...

  13. Guiding of Long-Distance Electric Discharges by Combined Femtosecond and Nanosecond Pulses Emitted by Hybrid KrF Laser System

    Science.gov (United States)

    2014-01-30

    laser pulse initiated HV discharge with a time delay of tens nanoseconds – evidently it is developing due to an avalanche -like growth of electron...AFRL-AFOSR-UK-TR-2014-0040 Guiding of long-distance electric discharges by combined femtosecond and nanosecond pulses emitted by...and guiding electric discharge , KrF laser, femtosecond pulse , nanosecond pulse , filamentation, plasma channel, lightning control, laser control of

  14. Comparison of optical feedback dynamics of InAs/GaAs quantum-dot lasers emitting solely on ground or excited states.

    Science.gov (United States)

    Lin, Lyu-Chih; Chen, Chih-Ying; Huang, Heming; Arsenijević, Dejan; Bimberg, Dieter; Grillot, Frédéric; Lin, Fan-Yi

    2018-01-15

    We experimentally compare the dynamics of InAs/GaAs quantum dot lasers under optical feedback emitting exclusively on ground states (GSs) or excited states (ESs). By varying the feedback parameters and putting focus either on their short or long cavity regions, various periodic and chaotic oscillatory states are found. The GS laser is shown to be more resistant to feedback, benefiting from its strong relaxation oscillation damping. In contrast, the ES laser can easily be driven into complex dynamics. While the GS laser is of importance for the development of isolator-free transmitters, the ES laser is essential for applications taking advantages of chaos.

  15. Analysis of the M-shell spectra emitted by a short-pulse laser-created tantalum plasma

    Science.gov (United States)

    Busquet; Jiang; Coinsertion Markte CY; Kieffer; Klapisch; Bar-Shalom; Bauche-Arnoult; Bachelier

    2000-01-01

    The spectrum of tantalum emitted by a subpicosecond laser-created plasma, was recorded in the regions of the 3d-5f, 3d-4f, and 3d-4p transitions. The main difference with a nanosecond laser-created plasma spectrum is a broad understructure appearing under the 3d-5f transitions. An interpretation of this feature as a density effect is proposed. The supertransition array model is used for interpreting the spectrum, assuming local thermodynamic equilibrium (LTE) at some effective temperature. An interpretation of the 3d-4f spectrum using the more detailed unresolved transition array formalism, which does not assume LTE, is also proposed. Fitted contributions of the different ionic species differ slightly from the LTE-predicted values.

  16. Modular PbSrS/PbS mid-infrared vertical external cavity surface emitting laser on Si

    Science.gov (United States)

    Khiar, A.; Rahim, M.; Fill, M.; Felder, F.; Zogg, H.; Cao, D.; Kobayashi, S.; Yokoyama, T.; Ishida, A.

    2011-07-01

    A mid-infrared vertical external cavity surface emitting laser (VECSEL) based on undoped PbS is described herein. A 200 nm-thick PbS active layer embedded between PbSrS cladding layers forms a double heterostructure. The layers are grown on a lattice and thermal expansion mismatched Si-substrate. The substrate is placed onto a flat bottom Bragg mirror again grown on a Si substrate, and the VECSEL is completed with a curved top mirror. Pumping is done optically with a 1.55 μm laser diode. This leads to an extremely simple modular fabrication process. Lasing wavelengths range from 3-3.8 μm at 100-260 K heat sink temperature. The lowest threshold power is ˜210 mWp and highest output power is ˜250 mWp. The influence of the different recombination mechanism as well as free carrier absorption on the threshold power is modeled.

  17. Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers

    International Nuclear Information System (INIS)

    Mi, Z; Zhao, S; Djavid, M; Liu, X; Kang, J; Woo, S Y; Bugnet, M; Botton, G A; Kong, X; Guo, H; Ji, W; Liu, Z

    2016-01-01

    We report on the detailed molecular beam epitaxial growth and characterization of Al(Ga)N nanowire heterostructures on Si and their applications for deep ultraviolet light emitting diodes and lasers. The nanowires are formed under nitrogen-rich conditions without using any metal catalyst. Compared to conventional epilayers, Mg-dopant incorporation is significantly enhanced in nearly strain- and defect-free Al(Ga)N nanowire structures, leading to efficient p -type conduction. The resulting Al(Ga)N nanowire LEDs exhibit excellent performance, including a turn-on voltage of ∼5.5 V for an AlN nanowire LED operating at 207 nm. The design, fabrication, and performance of an electrically injected AlGaN nanowire laser operating in the UV-B band is also presented. (paper)

  18. Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers

    Directory of Open Access Journals (Sweden)

    Cao Q

    2007-01-01

    Full Text Available AbstractTen-layer InAs/In0.15Ga0.85As quantum dot (QD laser structures have been grown using molecular beam epitaxy (MBE on GaAs (001 substrate. Using the pulsed anodic oxidation technique, narrow (2 μm ridge waveguide (RWG InAs QD lasers have been fabricated. Under continuous wave operation, the InAs QD laser (2 × 2,000 μm2 delivered total output power of up to 272.6 mW at 10 °C at 1.3 μm. Under pulsed operation, where the device heating is greatly minimized, the InAs QD laser (2 × 2,000 μm2 delivered extremely high output power (both facets of up to 1.22 W at 20 °C, at high external differential quantum efficiency of 96%. Far field pattern measurement of the 2-μm RWG InAs QD lasers showed single lateral mode operation.

  19. A GaInAsP/InP Vertical Cavity Surface Emitting Laser for 1.5 m m operation

    Science.gov (United States)

    Sceats, R.; Balkan, N.; Adams, M. J.; Masum, J.; Dann, A. J.; Perrin, S. D.; Reid, I.; Reed, J.; Cannard, P.; Fisher, M. A.; Elton, D. J.; Harlow, M. J.

    1999-04-01

    We present the results of our studies concerning the pulsed operation of a bulk GaInAsP/InP vertical cavity surface emitting laser (VCSEL). The device is tailored to emit at around 1.5 m m at room temperature. The structure has a 45 period n-doped GaInAsP/InP bottom distributed Bragg reflector (DBR), and a 4 period Si/Al2O3 dielectric top reflector defining a 3-l cavity. Electroluminescence from a 16 m m diameter top window was measured in the pulsed injection mode. Spectral measurements were recorded in the temperature range between 125K and 240K. Polarisation, lasing threshold current and linewidth measurements were also carried out at the same temperatures. The threshold current density has a broad minimum at temperatures between 170K and 190K, (Jth=13.2 kA/cm2), indicating a good match between the gain and the cavity resonance in this temperature range. Maximum emitted power from the VCSEL is 0.18 mW at 180K.

  20. Electromagnetic radiation emitted by a plasma produced in air by laser pulses with lambda = 10.6 μm

    International Nuclear Information System (INIS)

    Danilychev, V.A.; Zvorykin, V.D.; Kholin, I.V.; Chugunov, A.Y.

    1981-01-01

    The spectrum, brightness, and energy have been measured for the electromagnetic radiation emitted by a plasma produced in air near a solid surface by pulses from a high-power CO 2 laser. The air pressure was varied over the range p 0 = 0.1--760 torr, and the laser power density was varied over the range q = 5 x 10 6 --10 8 W/cm 2 . At p 0 > or approx. =2--5 torr the radiation properties of the plasma are determined by a laser-beam absorption wave which arises in the gas. The maximum brightness temperature, T/sub b/approx. =50 000 K (lambda = 400 +- 20 nm), is reached at p 0 = 25 torr. The emission spectrum is quite different from an equilibrium spectrum, consisting primarily of NII, OII, and NIII lines. The total energy radiation by the plasma in the wavelength interval 360--2600 nm into a solid angle of 4π sr reaches 2.3% of the laser pulse energy

  1. High power diode lasers emitting from 639 nm to 690 nm

    Science.gov (United States)

    Bao, L.; Grimshaw, M.; DeVito, M.; Kanskar, M.; Dong, W.; Guan, X.; Zhang, S.; Patterson, J.; Dickerson, P.; Kennedy, K.; Li, S.; Haden, J.; Martinsen, R.

    2014-03-01

    There is increasing market demand for high power reliable red lasers for display and cinema applications. Due to the fundamental material system limit at this wavelength range, red diode lasers have lower efficiency and are more temperature sensitive, compared to 790-980 nm diode lasers. In terms of reliability, red lasers are also more sensitive to catastrophic optical mirror damage (COMD) due to the higher photon energy. Thus developing higher power-reliable red lasers is very challenging. This paper will present nLIGHT's released red products from 639 nm to 690nm, with established high performance and long-term reliability. These single emitter diode lasers can work as stand-alone singleemitter units or efficiently integrate into our compact, passively-cooled Pearl™ fiber-coupled module architectures for higher output power and improved reliability. In order to further improve power and reliability, new chip optimizations have been focused on improving epitaxial design/growth, chip configuration/processing and optical facet passivation. Initial optimization has demonstrated promising results for 639 nm diode lasers to be reliably rated at 1.5 W and 690nm diode lasers to be reliably rated at 4.0 W. Accelerated life-test has started and further design optimization are underway.

  2. Point Defect Identification and Management for Sub-300 nm Light Emitting Diodes and Laser Diodes Grown on Bulk AlN Substrates

    Science.gov (United States)

    Bryan, Zachary A.

    defects in the films due to the increase in their formation energies during growth. This method improved the electrical properties of p-type GaN and n-type AlGaN and reduced stress thereby preventing films from cracking. The optical and structural quality of high Al-content AlGaN multiple quantum wells, light emitting diodes (LEDs), and laser diodes (LDs) grown on single crystalline AlN substrates are investigated. The use of bulk AlN substrates enabled the undoubtable distinction between the effect of growth conditions, such as V/III ratio, on the optical quality from the influence of dislocations. At a high V/III ratio and the proper MQW design, a record high IQE of 80% at a carrier density of 1018 cm-3 is achieved at 258 nm. With these structures, true sub-300 nm lasing is realized and distinguished from super luminescence for the first time by the observations of lasing characteristics such as longitudinal cavity modes, 100% polarized emission, and an elliptically shaped far-field pattern. A transverse electric to transverse magnetic polarization crossover at 245 nm is found. Lasing is observed in both asymmetric and symmetric waveguide structures with and without the presence of Si- and Mg-doping in the waveguide layer. The lowest measurable lasing threshold is 50 kW/cm2 and potentially a lower threshold is obtained in a symmetric waveguide structure while the lowest measured lasing wavelength is 237 nm. Gain measurements reveal a net modal gain greater than 100 cm-1 which is the highest reported value for sub-300 nm lasers. Furthermore, a lowest reported FWHM of 0.012 nm is observed indicating the high quality of the laser structure. Finally, electrically injected LED and LD structures are studied showing great potential for the realization of the first sub-300 nm LD.

  3. Nanoimprinted organic semiconductor laser pumped by a light-emitting diode.

    Science.gov (United States)

    Tsiminis, Georgios; Wang, Yue; Kanibolotsky, Alexander L; Inigo, Anto R; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

    2013-05-28

    An organic semiconductor laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN LED is demonstrated. Molecular weight optimization of the polymer gain medium on a nanoimprinted polymer distributed feedback resonator enables the lowest reported UV-NIL laser threshold density of 770 W cm(-2) , establishing the potential for scalable organic laser fabrication compatible with mass-produced LEDs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Development of blue lasers, from second harmonic generation using a Nd:YAG laser emitting at 946 nm

    International Nuclear Information System (INIS)

    Nogueira, Gustavo Bernardes

    2010-01-01

    Blue lasers have attracted much attention for applications such as blue-ray, displays and as pumped source for the Ti:sapphire laser. A Nd:YAG crystal with diffusion bonded end-caps was used together with a pump wavelength of 802,3 nm, detuned from the absorption peak at 808 nm in order to minimize the thermal lens effect by providing for a better temperature distribution inside the crystal. Using different input mirror radii, the best relation between pump waist and laser was achieved in a linear cavity and resulted in 6.75W cw (continuous wave) laser power at 946 nm and slope efficiency of 48%. In a second step, a second harmonic generation crystal for blue emission at 473 nm was inserted into different types of resonators, and the blue output power at 473 nm was measured as a function of absorbed pump power. (author)

  5. Wave-guided optical waveguides

    DEFF Research Database (Denmark)

    Palima, Darwin; Bañas, Andrew Rafael; Vizsnyiczai, George

    2012-01-01

    This work primarily aims to fabricate and use two photon polymerization (2PP) microstructures capable of being optically manipulated into any arbitrary orientation. We have integrated optical waveguides into the structures and therefore have freestanding waveguides, which can be positioned anywhe...... bridge the diffraction barrier. This structure-mediated paradigm may be carried forward to open new possibilities for exploiting beams from far-field optics down to the subwavelength domain....

  6. Theory and Modeling of Lasing Modes in Vertical Cavity Surface Emitting Lasers

    Directory of Open Access Journals (Sweden)

    Benjamin Klein

    1998-01-01

    modes that the VCSEL can support are then determined by matching the gain necessary for the optical system in both magnitude and phase to the gain available from the laser's electronic system. Examples are provided.

  7. Characterization of extreme ultraviolet light-emitting plasmas from a laser-excited fluorine containing liquid polymer jet target

    International Nuclear Information System (INIS)

    Abel, B.; Assmann, J.; Faubel, M.; Gaebel, K.; Kranzusch, S.; Lugovoj, E.; Mann, K.; Missalla, T.; Peth, Ch.

    2004-01-01

    The operation of a liquid polymer jet laser-plasma target and the characterization of the absolute x-ray emission in the extreme ultraviolet wavelength window from 9-19 nm is reported. The target is a liquid polymer (perfluoro-polyether) that is exposed to pulsed and focused laser light at 532 nm in the form of a thin, liquid microjet (d=40 to 160 μm) in vacuum. The spectral brightness of the source in the 13 nm range is relatively high because a large fraction of radiative energy is emitted in one single line only, which is assigned to be the 2p-3d F VII doublet at 12.8 nm, with a laser energy conversion efficiency of 0.45% (2π sr, 2% bandwidth) in our initial experiment. A further increase of the relative emission has been found in the wavelength range between 7 and 17 nm when the jet diameter was increased from 40 to 160 μm. The two-dimensional spatial profile of the source plasma (d=40 to 50 μm) has been analyzed with a pinhole camera

  8. Intense Plasma Waveguide Terahertz Sources for High-Field THz Probe Science with Ultrafast Lasers for Solid State Physics

    Science.gov (United States)

    2016-08-25

    Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a...Summary 2 1. Introduction 2. Two colour excitation of intense terahertz radiation in MOFs 2 3. Terahertz optical nonlinearities in...of 2- colour THz generation and propagation in waveguides that we have developed to evaluate fibre designs before fabrication is only one

  9. Highly efficient channel waveguide lasers at 1 µm and 2 µm in refractive-index-engineered potassium double tungstates

    NARCIS (Netherlands)

    van Dalfsen, Koop; Geskus, D.; García Blanco, Sonia Maria; Pollnau, Markus

    Epitaxial growth of rare-earth-ion-activated KY(1-x-y)Gd(x)Lu(y)(WO4)2 co-doped thin layers onto KY(WO4)2 substrates has enabled lattice-matched waveguides with high refractive-index contract and large variation of the active rare-earth-ion concentration. In Yb3+-activated micro-structured channel

  10. Diagnostics of Particles emitted from a Laser generated Plasma: Experimental Data and Simulations

    Science.gov (United States)

    Costa, Giuseppe; Torrisi, Lorenzo

    2018-01-01

    The charge particle emission form laser-generated plasma was studied experimentally and theoretically using the COMSOL simulation code. The particle acceleration was investigated using two lasers at two different regimes. A Nd:YAG laser, with 3 ns pulse duration and 1010 W/cm2 intensity, when focused on solid target produces a non-equilibrium plasma with average temperature of about 30-50 eV. An Iodine laser with 300 ps pulse duration and 1016 W/cm2 intensity produces plasmas with average temperatures of the order of tens keV. In both cases charge separation occurs and ions and electrons are accelerated at energies of the order of 200 eV and 1 MeV per charge state in the two cases, respectively. The simulation program permits to plot the charge particle trajectories from plasma source in vacuum indicating how they can be deflected by magnetic and electrical fields. The simulation code can be employed to realize suitable permanent magnets and solenoids to deflect ions toward a secondary target or detectors, to focalize ions and electrons, to realize electron traps able to provide significant ion acceleration and to realize efficient spectrometers. In particular it was applied to the study two Thomson parabola spectrometers able to detect ions at low and at high laser intensities. The comparisons between measurements and simulation is presented and discussed.

  11. X-ray spectrum emitted by a laser-produced cerium plasma in the 7.5 to 12 A wavelength range

    International Nuclear Information System (INIS)

    Doron, R.; Behar, E.; Fraenkel, M.; Mandelbaum, P.; Schwob, J.L.; Zigler, A.

    2001-01-01

    A highly stripped cerium (Z = 58) plasma is produced by irradiating a solid cerium target with an intense short laser pulse. The X-ray spectrum emitted from the plasma is recorded in the 7.5-12 A wavelength range using a flat RAP crystal spectrometer. Ab-initio calculations using the RELAC relativistic computer code, as well as isoelectronic trends deduced from previous works, together with spectra obtained under different laser beam focusing conditions, are all employed for the identification of the spectral lines and features emitted by various ions from Fe-like Ce 32+ to As-like Ce 25+ . The technique of comparing spectra obtained using different laser intensities is also employed to confirm or to resolve some ambiguous identifications of spectral features in the spectrum of a laser-produced lanthanum plasma studied in a previous work. (orig.)

  12. X-ray spectrum emitted by a laser-produced cerium plasma in the 7.5 to 12 A wavelength range

    Energy Technology Data Exchange (ETDEWEB)

    Doron, R.; Behar, E.; Fraenkel, M.; Mandelbaum, P.; Schwob, J.L.; Zigler, A. [Hebrew Univ., Jerusalem (Israel). Racah Inst. of Physics; Faenov, A.Ya.; Pikuz, T.A. [Multicharged Ion Spectra Data Center, VNIIFTRI, Mendeleevo (Russian Federation)

    2001-01-01

    A highly stripped cerium (Z = 58) plasma is produced by irradiating a solid cerium target with an intense short laser pulse. The X-ray spectrum emitted from the plasma is recorded in the 7.5-12 A wavelength range using a flat RAP crystal spectrometer. Ab-initio calculations using the RELAC relativistic computer code, as well as isoelectronic trends deduced from previous works, together with spectra obtained under different laser beam focusing conditions, are all employed for the identification of the spectral lines and features emitted by various ions from Fe-like Ce{sup 32+} to As-like Ce{sup 25+}. The technique of comparing spectra obtained using different laser intensities is also employed to confirm or to resolve some ambiguous identifications of spectral features in the spectrum of a laser-produced lanthanum plasma studied in a previous work. (orig.)

  13. Diminution of acute radiation reaction of mouse skin with low-intensity infrared laser/red diodes-emitted light

    International Nuclear Information System (INIS)

    Meshcherikova, V.V.; Klimakov, B.D.; Goldobenko, G.V.; Vajnson, A.A.

    2000-01-01

    Efficiency of the application of different regimes of laser treatment of radiation-induced skin reactions in mice feet is compared. Posterior limb feet of mice were exposed to acute X radiation at 30-36 Gy dose or fractionated radiation at 45 Gy dose. In the day of primary irradiation or different time later the feet were treated using magnetic infrared laser therapeutic MILTA-01 apparatus. Magnetic and light components of the MILTA-01 apparatus reduce the effect of radiation on mice skin corresponding two time decrease in X-radiation dose [ru

  14. Single-exposure two-dimensional superresolution in digital holography using a vertical cavity surface-emitting laser source array.

    Science.gov (United States)

    Granero, Luis; Zalevsky, Zeev; Micó, Vicente

    2011-04-01

    We present a new implementation capable of producing two-dimensional (2D) superresolution (SR) imaging in a single exposure by aperture synthesis in digital lensless Fourier holography when using angular multiplexing provided by a vertical cavity surface-emitting laser source array. The system performs the recording in a single CCD snapshot of a multiplexed hologram coming from the incoherent addition of multiple subholograms, where each contains information about a different 2D spatial frequency band of the object's spectrum. Thus, a set of nonoverlapping bandpass images of the input object can be recovered by Fourier transformation (FT) of the multiplexed hologram. The SR is obtained by coherent addition of the information contained in each bandpass image while generating an enlarged synthetic aperture. Experimental results demonstrate improvement in resolution and image quality.

  15. Impact of optical feedback on current-induced polarization behavior of 1550 nm vertical-cavity surface-emitting lasers.

    Science.gov (United States)

    Deng, Tao; Wu, Zheng-Mao; Xie, Yi-Yuan; Wu, Jia-Gui; Tang, Xi; Fan, Li; Panajotov, Krassimir; Xia, Guang-Qiong

    2013-06-01

    Polarization switching (PS) between two orthogonal linearly polarized fundamental modes is experimentally observed in commercial free-running 1550 nm vertical-cavity surface-emitting lasers (VCSELs) (Raycan). The characteristics of this PS are strongly modified after introducing a polarization-preserved (PP) or polarization-orthogonal (PO) optical feedback. Under the case that the external cavity is approximately 30 cm, the PP optical feedback results in the PS point shifting toward a lower injection current, and the region within which the two polarization modes coexist is enlarged with the increase of the PP feedback strength. Under too-strong PP feedback levels, the PS disappears. The impact of PO optical feedback on VCSEL polarization behavior is quite similar to that of PP optical feedback, but larger feedback strength is needed to obtain similar results.

  16. Steady-state characteristics of lateral p-n junction vertical-cavity surface-emitting lasers

    Science.gov (United States)

    Ryzhii, V.; Tsutsui, N.; Khmyrova, I.; Ikegami, T.; Vaccaro, P. O.; Taniyama, H.; Aida, T.

    2001-09-01

    We developed an analytical device model for lateral p-n junction vertical-cavity surface-emitting lasers (LJVCSELs) with a quantum well active region. The model takes into account the features of the carrier injection, transport, and recombination in LJVCSELs as well as the features of the photon propagation in the cavity. This model is used for the calculation and analysis of the LJVCSEL steady-state characteristics. It is shown that the localization of the injected electrons primarily near the p-n junction and the reabsorption of lateral propagating photons significantly effects the LJVCSELs performance, in particular, the LJVCSEL threshold current and power-current characteristics. The reincarnation of electrons and holes due to the reabsorption of lateral propagating photons can substantially decrease the threshold current.

  17. PbSe quantum well mid-infrared vertical external cavity surface emitting laser on Si-substrates

    Science.gov (United States)

    Fill, M.; Khiar, A.; Rahim, M.; Felder, F.; Zogg, H.

    2011-05-01

    Mid-infrared vertical external cavity surface emitting lasers based on PbSe/PbSrSe multi-quantum-well structures on Si-substrates are realized. A modular design allows growing the active region and the bottom Bragg mirror on two different Si-substrates, thus facilitating comparison between different structures. Lasing is observed from 3.3 to 5.1 μm wavelength and up to 52 °C heat sink temperature with 1.55 μm optical pumping. Simulations show that threshold powers are limited by Shockley-Read recombination with lifetimes as short as 0.1 ns. At higher temperatures, an additional threshold power increase occurs probably due to limited carrier diffusion length and carrier leakage, caused by an unfavorable band alignment.

  18. Amplification of an Autodyne Signal in a Bistable Vertical-Cavity Surface-Emitting Laser with the Use of a Vibrational Resonance

    Science.gov (United States)

    Chizhevsky, V. N.

    2018-01-01

    For the first time, it is demonstrated experimentally that a vibrational resonance in a polarization-bistable vertical-cavity surface-emitting laser can be used to increase the laser response in autodyne detection of microvibrations from reflecting surfaces. In this case, more than 25-fold signal amplification is achieved. The influence of the asymmetry of the bistable potential on the microvibration-detection efficiency is studied.

  19. Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

    KAUST Repository

    Leonard, J. T.

    2016-03-01

    We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with III-nitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 mu m aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of similar to 550 mu W with a threshold current density of similar to 3.5 kA/cm(2), while the ITO VCSELs show peak powers of similar to 80 mu W and threshold current densities of similar to 7 kA/cm

  20. Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

    KAUST Repository

    Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Shen, Chao; Margalith, T.; Ng, Tien Khee; Denbaars, S. P.; Ooi, Boon S.; Speck, J. S.; Nakamura, S.

    2016-01-01

    We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with III-nitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 mu m aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of similar to 550 mu W with a threshold current density of similar to 3.5 kA/cm(2), while the ITO VCSELs show peak powers of similar to 80 mu W and threshold current densities of similar to 7 kA/cm

  1. Angular distributions of emitted particles by laser ablation of silver at 355 nm

    DEFF Research Database (Denmark)

    Svendsen, Winnie Edith; Schou, Jørgen; Hansen, T.

    1998-01-01

    The angular distribution of laser ablated silver in vacuum has been measured in situ with an array of quartz-crystal microbalances. The silver surface was irradiated by ns pulses from a Nd:YAG laser operating at 355 nm for fluences ranging from 0.7 J/cm2 to 8 J/cm2. The distribution is strongly...... peaked in the forward direction corresponding to cosp/, where p varies from 5 to 12 for the largest beam spot, but is less peaked for the smallest beam spots. The total collected yield of ablated atoms is about 221015 Ag atoms per pulse for the highest pulse energies....

  2. Progress on erbium-doped waveguide components

    DEFF Research Database (Denmark)

    Bjarklev, Anders Overgaard; Berendt, Martin Ole; Broeng, Jes

    1997-01-01

    The recent development in erbium-doped fiber amplifiers, and fiber lasers is reviewed. Also the latest results on planar erbium-doped waveguide amplifiers and high erbium concentration characterisation methods are presented...

  3. Growth of 1.5 micron gallium indium nitrogen arsenic antimonide vertical cavity surface emitting lasers by molecular beam epitaxy

    Science.gov (United States)

    Wistey, Mark Allan

    Fiber optics has revolutionized long distance communication and long haul networks, allowing unimaginable data speeds and noise-free telephone calls around the world for mere pennies per hour at the trunk level. But the high speeds of optical fiber generally do not extend to individual workstations or to the home, in large part because it has been difficult and expensive to produce lasers which emitted light at wavelengths which could take advantage of optical fiber. One of the most promising solutions to this problem is the development of a new class of semiconductors known as dilute nitrides. Dilute nitrides such as GaInNAs can be grown directly on gallium arsenide, which allows well-established processing techniques. More important, gallium arsenide allows the growth of vertical-cavity surface-emitting lasers (VCSELs), which can be grown in dense, 2D arrays on each wafer, providing tremendous economies of scale for manufacturing, testing, and packaging. Unfortunately, GaInNAs lasers have suffered from what has been dubbed the "nitrogen penalty," with high thresholds and low efficiency as the fraction of nitrogen in the semiconductor was increased. This thesis describes the steps taken to identify and essentially eliminate the nitrogen penalty. Protecting the wafer surface from plasma ignition, using an arsenic cap, greatly improved material quality. Using a Langmuir probe, we further found that the nitrogen plasma source produced a large number of ions which damaged the wafer during growth. The ions were dramatically reduced using deflection plates. Low voltage deflection plates were found to be preferable to high voltages, and simulations showed low voltages to be adequate for ion removal. The long wavelengths from dilute nitrides can be partly explained by wafer damage during growth. As a result of these studies, we demonstrated the first CW, room temperature lasers at wavelengths beyond 1.5mum on gallium arsenide, and the first GaInNAs(Sb) VCSELs beyond 1

  4. The vertical-cavity surface-emitting laser incorporating a high contrast grating mirror as a sensing device

    Science.gov (United States)

    Marciniak, Magdalena; Gebski, Marcin; Piskorski, Łukasz; Dems, Maciej; Wasiak, M.; Panajotov, Krassimir; Lott, James A.; Czyszanowski, Tomasz

    2018-02-01

    We propose a novel optical sensing system based on one device that both emits and detects light consisting of a verticalcavity surface-emitting laser (VCSEL) incorporating an high contrast grating (HCG) as a top mirror. Since HCGs can be very sensitive to the optical properties of surrounding media, they can be used to detect gases and liquid. The presence of a gas or a liquid around an HCG mirror causes changes of the power reflectance of the mirror, which corresponds to changes of the VCSEL's cavity quality factor and current-voltage characteristic. By observation of the current-voltage characteristic we can collect information about the medium around the HCG. In this paper we investigate how the properties of the HCG mirror depend on the refractive index of the HCG surroundings. We present results of a computer simulation performed with a three-dimensional fully vectorial model. We consider silicon HCGs on silica and designed for a 1300 nm VCSEL emission wavelength. We demonstrate that our approach can be applied to other wavelengths and material systems.

  5. Attractor hopping between polarization dynamical states in a vertical-cavity surface-emitting laser subject to parallel optical injection

    Science.gov (United States)

    Denis-le Coarer, Florian; Quirce, Ana; Valle, Angel; Pesquera, Luis; Rodríguez, Miguel A.; Panajotov, Krassimir; Sciamanna, Marc

    2018-03-01

    We present experimental and theoretical results of noise-induced attractor hopping between dynamical states found in a single transverse mode vertical-cavity surface-emitting laser (VCSEL) subject to parallel optical injection. These transitions involve dynamical states with different polarizations of the light emitted by the VCSEL. We report an experimental map identifying, in the injected power-frequency detuning plane, regions where attractor hopping between two, or even three, different states occur. The transition between these behaviors is characterized by using residence time distributions. We find multistability regions that are characterized by heavy-tailed residence time distributions. These distributions are characterized by a -1.83 ±0.17 power law. Between these regions we find coherence enhancement of noise-induced attractor hopping in which transitions between states occur regularly. Simulation results show that frequency detuning variations and spontaneous emission noise play a role in causing switching between attractors. We also find attractor hopping between chaotic states with different polarization properties. In this case, simulation results show that spontaneous emission noise inherent to the VCSEL is enough to induce this hopping.

  6. The fabrication of small molecule organic light-emitting diode pixels by laser-induced forward transfer

    Science.gov (United States)

    Shaw-Stewart, J. R. H.; Mattle, T.; Lippert, T. K.; Nagel, M.; Nüesch, F. A.; Wokaun, A.

    2013-01-01

    Laser-induced forward transfer (LIFT) is a versatile organic light-emitting diode (OLED) pixel deposition process, but has hitherto been applied exclusively to polymeric materials. Here, a modified LIFT process has been used to fabricate small molecule Alq3 organic light-emitting diodes (SMOLEDs). Small molecule thin films are considerably more mechanically brittle than polymeric thin films, which posed significant challenges for LIFT of these materials. The LIFT process presented here uses a polymeric dynamic release layer, a reduced environmental pressure, and a well-defined receiver-donor gap. The Alq3 pixels demonstrate good morphology and functionality, even when compared to conventionally fabricated OLEDs. The Alq3 SMOLED pixel performances show a significant amount of fluence dependence, not observed with polymerical OLED pixels made in previous studies. A layer of tetrabutyl ammonium hydroxide has been deposited on top of the aluminium cathode, as part of the donor substrate, to improve electron injection to the Alq3, by over 600%. These results demonstrate that this variant of LIFT is applicable for the deposition of functional small molecule OLEDs as well as polymeric OLEDs.

  7. Erbium–ytterbium fibre laser emitting more than 13 W of power in ...

    Indian Academy of Sciences (India)

    2014-01-05

    Jan 5, 2014 ... We report the work on erbium:ytterbium-doped double clad fibre laser (EYDFL), that is pumped at ... reduction in life-time. The active ... region. Figure 2 shows plot of output power vs. absorbed pump power (after accounting.

  8. Red-light-emitting laser diodes operating CW at room temperature

    Science.gov (United States)

    Kressel, H.; Hawrylo, F. Z.

    1976-01-01

    Heterojunction laser diodes of AlGaAs have been prepared with threshold current densities substantially below those previously achieved at room temperature in the 7200-8000-A spectral range. These devices operate continuously with simple oxide-isolated stripe contacts to 7400 A, which extends CW operation into the visible (red) portion of the spectrum.

  9. Red-light-emitting laser diodes operating cw at room temperature

    International Nuclear Information System (INIS)

    Kressel, H.; Hawrylo, F.Z.

    1976-01-01

    Heterojunction laser diodes of AlGaAs have been prepared with threshold current densities substantially below those previously achieved at room temperature in the 7200 to 8000-A spectral range. These devices operate cw with simple oxide-isolated stripe contacts to 7400 A, which extends cw operation for the first time into the visible (red) portion of the spectrum

  10. CO2 laser photoacoustic detection of ammonia emitted by ceramic industries.

    Science.gov (United States)

    Sthel, M S; Schramm, D U; Lima, G R; Carneiro, L; Faria, R T; Castro, M P P; Alexandre, J; Toledo, R; Silva, M G; Vargas, H

    2011-01-01

    A homemade photoacoustic spectrometer has been constructed for monitoring gas emission from several sources. Numerous air pollutant gases are emitted exhaust of industries, vehicles and power plants. The photoacoustic technique is extremely sensitive and selective in detecting various gases. This work focuses on the gas emitted by the ceramic industry in northern Rio de Janeiro State in Brazil, the ceramic industry plays a remarkable role in the economy activity of this region, in recent years, this region developed into a significant red ceramic complex. The potential impact on the atmospheric environment of the region due to gaseous pollutant emissions from these anthropogenic sources needs to be evaluated. In this work we identified NH3 present in the samples collected in the kiln of a ceramic plant, in the concentration range of 33-52 ppmV. The ammonia gas present in our collected samples might come from the excess nitrogen in the manure soil from where the ceramic material was extracted. This soil was used for the sugarcane culture which is another important economic activity of this region. Copyright © 2010 Elsevier B.V. All rights reserved.

  11. Ultra-high speed all-optical signal processing using silicon waveguides and a carbon nanotubes based mode-locked laser

    DEFF Research Database (Denmark)

    Ji, Hua

    This thesis concerns the use of nano-engineered silicon waveguides for ultra-high speed optical serial data signal processing. The fundamental nonlinear properties of nano-engineered silicon waveguides are characterized. Utilizing the nonlinear effect in nano-engineered silicon waveguides for dem...

  12. Transverse mode selection in vertical-cavity surface-emitting lasers via deep impurity-induced disordering

    Science.gov (United States)

    O'Brien, Thomas R.; Kesler, Benjamin; Dallesasse, John M.

    2017-02-01

    Top emission 850-nm vertical-cavity surface-emitting lasers (VCSELs) demonstrating transverse mode selection via impurity-induced disordering (IID) are presented. The IID apertures are fabricated via closed ampoule zinc diffusion. A simple 1-D plane wave model based on the intermixing of Group III atoms during IID is presented to optimize the mirror loss of higher-order modes as a function of IID strength and depth. In addition, the impact of impurity diffusion into the cap layer of the lasers is shown to improve contact resistance. Further investigation of the mode-dependent characteristics of the device imply an increase in the thermal impedance associated with the fraction of IID contained within the oxide aperture. The optimization of the ratio of the IID aperture to oxide aperture is experimentally determined. Single fundamental mode output of 1.6 mW with 30 dBm side mode suppression ratio is achieved by a 3.0 μm oxide-confined device with an IID aperture of 1.3 μm indicating an optimal IID aperture size of 43% of the oxide aperture.

  13. Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

    International Nuclear Information System (INIS)

    Miller, Mary A.; Tangyunyong, Paiboon; Cole, Edward I.

    2016-01-01

    Laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes (LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increased leakage is not present in devices without AVM signals. Transmission electron microscopy analysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)

  14. Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

    Energy Technology Data Exchange (ETDEWEB)

    Miller, Mary A.; Tangyunyong, Paiboon; Cole, Edward I. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1086 (United States)

    2016-01-14

    Laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes (LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increased leakage is not present in devices without AVM signals. Transmission electron microscopy analysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)].

  15. Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection

    Czech Academy of Sciences Publication Activity Database

    Civiš, Svatopluk; Zelinger, Zdeněk; Nevrlý, V.; Dorogan, A.; Ferus, Martin; Iakovlev, V.; Sirbu, A.; Mereuta, A.; Caliman, A.; Suruceanu, G.; Kapon, E.

    2014-01-01

    Roč. 147, NOV 2014 (2014), s. 53-59 ISSN 0022-4073 R&D Projects: GA MŠk(CZ) LD14022 Grant - others:Ministerstvo financí, Centrum zahraniční pomoci(CZ) PF049 Institutional support: RVO:61388955 ; RVO:68081707 Keywords : High resolution absorption spectroscopy * Monitoring of hydrogen fluoride, methane, and ammonia * Tunable diode laser spectroscopy (TDLS) Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.645, year: 2014

  16. The effects of sodium in ITO by pulsed laser deposition on organic light-emitting diodes

    International Nuclear Information System (INIS)

    Yong, Thian Khok; Kee, Yeh Yee; Tan, Sek Sean; Siew, Wee Ong; Tou, Teck Yong; Yap, Seong Shan

    2010-01-01

    The depth profile of ITO on glass was measured by the time-of-flight secondary ion mass spectroscopy (TOFSIMS) which revealed high sodium (Na) ion concentration at the ITO surface as well as at the ITO-glass interface as a result of out diffusion with substrate heating. Effects of Na ions on the performance of organic light-emitting diode (OLED) were studied by etching away a few tens of nanometers off the ITO surface with a dilute aquaregia solution of HNO 3 :HCl:H 2 O. A single-layer, molecularly doped ITO/(PVK+TPD+Alq 3 )/Al OLEDs were fabricated on bare and etched ITO samples. Although the removal of a 10-nm layer of ITO surface increased the voltage range, brightness, and lifetime, it was insufficient to correlate these improvements with solely to the Na ion reduction without considering the surface roughness. (orig.)

  17. The effects of sodium in ITO by pulsed laser deposition on organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Yong, Thian Khok [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Universiti Tunku Abdul Rahman, Faculty of Engineering and Science, Kuala Lumpur (Malaysia); Kee, Yeh Yee; Tan, Sek Sean; Siew, Wee Ong; Tou, Teck Yong [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Yap, Seong Shan [Multimedia University, Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Norwegian University of Science and Technology, Department of Physics, Trondheim (Norway)

    2010-12-15

    The depth profile of ITO on glass was measured by the time-of-flight secondary ion mass spectroscopy (TOFSIMS) which revealed high sodium (Na) ion concentration at the ITO surface as well as at the ITO-glass interface as a result of out diffusion with substrate heating. Effects of Na ions on the performance of organic light-emitting diode (OLED) were studied by etching away a few tens of nanometers off the ITO surface with a dilute aquaregia solution of HNO{sub 3}:HCl:H{sub 2}O. A single-layer, molecularly doped ITO/(PVK+TPD+Alq{sub 3})/Al OLEDs were fabricated on bare and etched ITO samples. Although the removal of a 10-nm layer of ITO surface increased the voltage range, brightness, and lifetime, it was insufficient to correlate these improvements with solely to the Na ion reduction without considering the surface roughness. (orig.)

  18. An apparatus comprising a waveguide-modulator and laser-diode and a method of manufacture thereof

    KAUST Repository

    Ooi, Boon S.; Shen, Chao; Ng, Tien Khee; Alyamani, Ahmed Y.; Eldesouki, Munir M.

    2017-01-01

    Example apparatuses are provided for simultaneous generation of high intensity light and modulated light signals at low modulation bias operating characteristics. An example apparatus includes a semipolar or nonpolar GaN-based substrate, a reverse- biased waveguide modulator section, and a forward-biased gain section based on InGaN/GaN quantum-well active regions, wherein the forward-biased gain section is grown on the semipolar or nonpolar GaN-based substrate. Methods of manufacturing the apparatuses described herein are also contemplated and described herein.

  19. An apparatus comprising a waveguide-modulator and laser-diode and a method of manufacture thereof

    KAUST Repository

    Ooi, Boon S.

    2017-04-13

    Example apparatuses are provided for simultaneous generation of high intensity light and modulated light signals at low modulation bias operating characteristics. An example apparatus includes a semipolar or nonpolar GaN-based substrate, a reverse- biased waveguide modulator section, and a forward-biased gain section based on InGaN/GaN quantum-well active regions, wherein the forward-biased gain section is grown on the semipolar or nonpolar GaN-based substrate. Methods of manufacturing the apparatuses described herein are also contemplated and described herein.

  20. Optical and structural properties of Pr:GGGcrystalline thin film waveguides grown by pulsed-laser deposition

    Czech Academy of Sciences Publication Activity Database

    Lančok, Ján; Garapon, C.; Jelínek, Miroslav; Mugnier, J.; Brenier, R.

    2005-01-01

    Roč. 81, - (2005), s. 1477-1483 ISSN 0947-8396 R&D Projects: GA ČR(CZ) GP106/01/D017 Grant - others:European Community- Marie Curie Fellowhip(XE) HP MF-CT-2001-01492; CLYME(FR) GEMPPM-UMR5510 CNRS-INSA Institutional research plan: CEZ:AV0Z10100522 Keywords : Pr: GGG * thin films * waveguide Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.990, year: 2005

  1. Fabrication of ultrafast laser written low-loss waveguides in flexible As₂S₃ chalcogenide glass tape.

    Science.gov (United States)

    Lapointe, Jerome; Ledemi, Yannick; Loranger, Sébastien; Iezzi, Victor Lambin; Soares de Lima Filho, Elton; Parent, Francois; Morency, Steeve; Messaddeq, Younes; Kashyap, Raman

    2016-01-15

    As2S3 glass has a unique combination of optical properties, such as wide transparency in the infrared region and a high nonlinear coefficient. Recently, intense research has been conducted to improve photonic devices using thin materials. In this Letter, highly uniform rectangular single-index and 2 dB/m loss step-index optical tapes have been drawn by the crucible technique. Low-loss (writing process in thin glass is also presented to facilitate a repeatable waveguide inscription recipe.

  2. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

    KAUST Repository

    Jahangir, Shafat; Frost, Thomas; Hazari, Arnab; Yan, Lifan; Stark, Ethan; LaMountain, Trevor; Millunchick, Joanna M.; Ooi, Boon S.; Bhattacharya, Pallab

    2015-01-01

    The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

  3. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

    KAUST Repository

    Jahangir, Shafat

    2015-02-16

    The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

  4. Planar integrated metasurfaces for highly-collimated terahertz quantum cascade lasers

    Science.gov (United States)

    Liang, Guozhen; Dupont, Emmanuel; Fathololoumi, Saeed; Wasilewski, Zbigniew R.; Ban, Dayan; Liang, Hou Kun; Zhang, Ying; Yu, Siu Fung; Li, Lianhe H.; Davies, Alexander Giles; Linfield, Edmund H.; Liu, Hui Chun; Wang, Qi Jie

    2014-01-01

    We report planar integration of tapered terahertz (THz) frequency quantum cascade lasers (QCLs) with metasurface waveguides that are designed to be spoof surface plasmon (SSP) out-couplers by introducing periodically arranged SSP scatterers. The resulting surface-emitting THz beam profile is highly collimated with a divergence as narrow as ~4° × 10°, which indicates a good waveguiding property of the metasurface waveguide. In addition, the low background THz power implies a high coupling efficiency for the THz radiation from the laser cavity to the metasurface structure. Furthermore, since all the structures are in-plane, this scheme provides a promising platform where well-established surface plasmon/metasurface techniques can be employed to engineer the emitted beam of THz QCLs controllably and flexibly. More importantly, an integrated active THz photonic circuit for sensing and communication applications could be constructed by incorporating other optoelectronic devices such as Schottky diode THz mixers, and graphene modulators and photodetectors. PMID:25403796

  5. COMPACT ATHERMAL OPTICAL WAVEGUIDE USING THERMAL EXPANSION AMPLIFICATION

    DEFF Research Database (Denmark)

    2001-01-01

    A method of temperature stabilising optical waveguides having positive thermal optical path length expansion, in particular fiber Bragg gratings or optical fiber DFB lasers or optical fiber DBR lasers, comprising affixing the optical waveguide to at least two points of a negative expanding fixture...

  6. True Yellow Light-Emitting Diodes as Phosphor for Tunable Color-Rendering Index Laser-Based White Light

    KAUST Repository

    Janjua, Bilal; Ng, Tien Khee; Zhao, Chao; Prabaswara, Aditya; Consiglio, Giuseppe Bernardo; Priante, Davide; Shen, Chao; Elafandy, Rami T.; Anjum, Dalaver H.; Alhamoud, Abdullah A.; Alatawi, Abdullah A.; Yang, Yang; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

    2016-01-01

    An urgent challenge for the lighting research community is the lack of efficient optical devices emitting in between 500 and 600 nm, resulting in the “green-yellow gap”. In particular, true green (∼555 nm) and true yellow (∼590 nm), along with blue and red, constitute four technologically important colors. The III-nitride material system, being the most promising choice of platform to bridge this gap, still suffers from high dislocation density and poor crystal quality in realizing high-power, efficient devices. Particularly, the high polarization fields in the active region of such 2D quantum confined structures prevent efficient recombination of carriers. Here we demonstrate a true yellow nanowire (NW) light emitting diode (LED) with peak emission of 588 nm at 29.5 A/cm2 (75 mA in a 0.5 × 0.5 mm2 device) and a low turn-on voltage of ∼2.5 V, while having an internal quantum efficiency of 39%, and without “efficiency droop” up to an injection current density of 29.5 A/cm2. By mixing yellow light from a NW LED in reflective configuration with that of a red, green, and blue laser diode (LD), white light with a correlated color temperature of ∼6000 K and color-rendering index of 87.7 was achieved. The nitride-NW-based device offers a robust, long-term stability for realizing yellow light emitters for tunable color-rendering index solid-state lighting, on a scalable, low-cost, foundry-compatible titanium/silicon substrate, suitable for industry uptake.

  7. Ultrabroad linewidth orange-emitting nanowires LED for high CRI laser-based white lighting and gigahertz communications

    KAUST Repository

    Janjua, Bilal

    2016-08-10

    Group-III-nitride laser diode (LD)-based solid-state lighting device has been demonstrated to be droop-free compared to light-emitting diodes (LEDs), and highly energy-efficient compared to that of the traditional incandescent and fluorescent white light systems. The YAG:Ce3+ phosphor used in LD-based solid-state lighting, however, is associated with rapid degradation issue. An alternate phosphor/LD architecture, which is capable of sustaining high temperature, high power density, while still intensity- and bandwidth-tunable for high color-quality remained unexplored. In this paper, we present for the first time, the proof-of-concept of the generation of high-quality white light using an InGaN-based orange nanowires (NWs) LED grown on silicon, in conjunction with a blue LD, and in place of the compound-phosphor. By changing the relative intensities of the ultrabroad linewidth orange and narrow-linewidth blue components, our LED/LD device architecture achieved correlated color temperature (CCT) ranging from 3000 K to above 6000K with color rendering index (CRI) values reaching 83.1, a value unsurpassed by the YAG-phosphor/blue-LD counterpart. The white-light wireless communications was implemented using the blue LD through on-off keying (OOK) modulation to obtain a data rate of 1.06 Gbps. We therefore achieved the best of both worlds when orange-emitting NWs LED are utilized as “active-phosphor”, while blue LD is used for both color mixing and optical wireless communications.

  8. True Yellow Light-Emitting Diodes as Phosphor for Tunable Color-Rendering Index Laser-Based White Light

    KAUST Repository

    Janjua, Bilal

    2016-10-11

    An urgent challenge for the lighting research community is the lack of efficient optical devices emitting in between 500 and 600 nm, resulting in the “green-yellow gap”. In particular, true green (∼555 nm) and true yellow (∼590 nm), along with blue and red, constitute four technologically important colors. The III-nitride material system, being the most promising choice of platform to bridge this gap, still suffers from high dislocation density and poor crystal quality in realizing high-power, efficient devices. Particularly, the high polarization fields in the active region of such 2D quantum confined structures prevent efficient recombination of carriers. Here we demonstrate a true yellow nanowire (NW) light emitting diode (LED) with peak emission of 588 nm at 29.5 A/cm2 (75 mA in a 0.5 × 0.5 mm2 device) and a low turn-on voltage of ∼2.5 V, while having an internal quantum efficiency of 39%, and without “efficiency droop” up to an injection current density of 29.5 A/cm2. By mixing yellow light from a NW LED in reflective configuration with that of a red, green, and blue laser diode (LD), white light with a correlated color temperature of ∼6000 K and color-rendering index of 87.7 was achieved. The nitride-NW-based device offers a robust, long-term stability for realizing yellow light emitters for tunable color-rendering index solid-state lighting, on a scalable, low-cost, foundry-compatible titanium/silicon substrate, suitable for industry uptake.

  9. Small-signal modulation and differential gain of red-emitting (λ = 630 nm) InGaN/GaN quantum dot lasers

    Energy Technology Data Exchange (ETDEWEB)

    Frost, Thomas; Banerjee, Animesh; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

    2013-11-18

    We report small-signal modulation bandwidth and differential gain measurements of a ridge waveguide In{sub 0.4}Ga{sub 0.6}N/GaN quantum dot laser grown by molecular beam epitaxy. The laser peak emission is at λ = 630 nm. The −3 dB bandwidth of an 800 μm long device was measured to be 2.4 GHz at 250 mA under pulsed biasing, demonstrating the possibility of high-speed operation of these devices. The differential gain was measured to be 5.3 × 10{sup −17} cm{sup 2}, and a gain compression factor of 2.87 × 10{sup −17} cm{sup 3} is also derived from the small-signal modulation response.

  10. Focused-ion-beam nano-structured rib channel waveguides in KY(WO4)2 for laser applications

    NARCIS (Netherlands)

    Gardillou, F.; Romanyuk, Y.E.; Pavius, M.; Borca, C.N.; Salathé, R.P.; Pollnau, Markus

    2006-01-01

    Bulk $KY(WO_4)_2$ (hereafter KYW) laser crystals doped with rare-earth ions are recognized to be among the most promising host materials for obtaining novel solid-state lasers. The rare-earth ions $RE^{3+}$ are easily incorporated in the KYW structure by replacing the $Y{3+}$ ions, resulting in a

  11. Integration of electro-absorption modulator in a vertical-cavity surface-emitting laser

    Science.gov (United States)

    Marigo-Lombart, L.; Calvez, S.; Arnoult, A.; Rumeau, A.; Viallon, C.; Thienpont, H.; Panajotov, K.; Almuneau, G.

    2018-02-01

    VCSELs became dominant laser sources in many short optical link applications such as datacenter, active cables, etc. Actual standards and commercialized VCSEL are providing 25 Gb/s data rates, but new solutions are expected to settle the next device generation enabling 100 Gb/s. Directly modulated VCSEL have been extensively studied and improved to reach bandwidths in the range of 26-32 GHz [Chalmers, TU Berlin], however at the price of increased applied current and thus reduced device lifetime. Furthermore, the relaxation oscillation limit still subsists with this solution. Thus, splitting the emission and the modulation functions as done with DFB lasers is a very promising alternative [TI-Tech, TU Berlin]. Here, we study the vertical integration of an ElectroAbsorption Modulator (EAM) within a VCSEL, where the output light of the VCSEL is modulated through the EAM section. In our original design, we finely optimized the EAM design to maximize the modulation depth by implementing perturbative Quantum Confined Stark Effect (QCSE) calculations, while designing the vertical integration of the EAM without penalty on the VCSEL static performances. We will present the different fabricated vertical structures, as well as the experimental electrical and optical static measurements for those configurations demonstrating a very good agreement with the reflectivity and absorption simulations obtained for both the VCSEL and the EAM-VCSEL structures. Finally, to reach very high frequency modulation we studied the BCB electrical properties up to 110 GHz and investigated coplanar and microstrip lines access to decrease both the parasitic capacitance and the influence of the substrate.

  12. Proton Irradiation Effects in Oxide-Confined Vertical Cavity Surface Emitting Laser (VCSEL) Diodes

    International Nuclear Information System (INIS)

    Armendariz, M.G.; Barnes, C.E.; Choquette, K.D.; Guertin, S.; Hash, G.L.; Schwank, J.R.; Swift, G.M.

    1999-01-01

    Recent space experience has shown that the use of commercial optocouplers can be problematic in spacecraft, such as TOPEX/Poseidon, that must operate in significant radiation environments. Radiation--induced failures of these devices have been observed in space and have been further documented at similar radiation doses in the laboratory. The ubiquitous use of optocouplers in spacecraft systems for a variety of applications, such as electrical isolation, switching and power transfer, is indicative of the need for optocouplers that can withstand the space radiation environment. In addition, the distributed nature of their use implies that it is not particularly desirable to shield optocouplers for use in radiation environments. Thus, it will be important for the space community to have access to radiation hardened/tolerant optocouplers. For many microelectronic and photonic devices, it is difficult to achieve radiation hardness without sacrificing performance. However, in the case of optocouplers, one should be able to achieve both superior radiation hardness and performance for such characteristics as switching speed, current transfer ratio (CTR), minimum power usage and array power transfer, if standard light emitting diodes (LEDs), such as those in the commercial optocouplers mentioned above, are avoided, and VCSELs are employed as the emitter portion of the optocoupler. The physical configuration of VCSELs allows one to achieve parallel use of an array of devices and construct a multichannel optocoupler in the standard fashion with the emitters and detectors looking at each other. In addition, detectors similar in structure to the VCSELs can be fabricated which allows bidirectional functionality of the optocoupler. Recent discussions suggest that VCSELs will enjoy widespread applications in the telecommunications and data transfer fields

  13. Lasing in silicon–organic hybrid waveguides

    Science.gov (United States)

    Korn, Dietmar; Lauermann, Matthias; Koeber, Sebastian; Appel, Patrick; Alloatti, Luca; Palmer, Robert; Dumon, Pieter; Freude, Wolfgang; Leuthold, Juerg; Koos, Christian

    2016-01-01

    Silicon photonics enables large-scale photonic–electronic integration by leveraging highly developed fabrication processes from the microelectronics industry. However, while a rich portfolio of devices has already been demonstrated on the silicon platform, on-chip light sources still remain a key challenge since the indirect bandgap of the material inhibits efficient photon emission and thus impedes lasing. Here we demonstrate a class of infrared lasers that can be fabricated on the silicon-on-insulator (SOI) integration platform. The lasers are based on the silicon–organic hybrid (SOH) integration concept and combine nanophotonic SOI waveguides with dye-doped organic cladding materials that provide optical gain. We demonstrate pulsed room-temperature lasing with on-chip peak output powers of up to 1.1 W at a wavelength of 1,310 nm. The SOH approach enables efficient mass-production of silicon photonic light sources emitting in the near infrared and offers the possibility of tuning the emission wavelength over a wide range by proper choice of dye materials and resonator geometry. PMID:26949229

  14. Efficient Photon Recycling and Radiation Trapping in Cesium Lead Halide Perovskite Waveguides

    KAUST Repository

    Dursun, Ibrahim

    2018-05-26

    Cesium lead halide perovskite materials have attracted considerable attention for potential applications in lasers, light emitting diodes and photodetectors. Here, we provide the experimental and theoretical evidence for photon recycling in CsPbBr3 perovskite microwires. Using two-photon excitation, we recorded photoluminescence (PL) lifetimes and emission spectra as a function of the lateral distance between PL excitation and collection positions along the microwire, with separations exceeding 100 µm. At longer separations, the PL spectrum develops a red-shifted emission peak accompanied by an appearance of well-resolved rise times in the PL kinetics. We developed quantitative modeling that accounts for bimolecular recombination and photon recycling within the microwire waveguide and is sufficient to account for the observed decay modifications. It relies on a high radiative efficiency in CsPbBr3 perovskite microwires and provides crucial information about the potential impact of photon recycling and waveguide trapping on optoelectronic properties of cesium lead halide perovskite materials.

  15. Nonlinear optical localization in embedded chalcogenide waveguide arrays

    International Nuclear Information System (INIS)

    Li, Mingshan; Huang, Sheng; Wang, Qingqing; Chen, Kevin P.; Petek, Hrvoje

    2014-01-01

    We report the nonlinear optical localization in an embedded waveguide array fabricated in chalcogenide glass. The array, which consists of seven waveguides with circularly symmetric cross sections, is realized by ultrafast laser writing. Light propagation in the chalcogenide waveguide array is studied with near infrared laser pulses centered at 1040 nm. The peak intensity required for nonlinear localization for the 1-cm long waveguide array was 35.1 GW/cm 2 , using 10-nJ pulses with 300-fs pulse width, which is 70 times lower than that reported in fused silica waveguide arrays and with over 7 times shorter interaction distance. Results reported in this paper demonstrated that ultrafast laser writing is a viable tool to produce 3D all-optical switching waveguide circuits in chalcogenide glass

  16. Ultrafast pulse amplification in mode-locked vertical external-cavity surface-emitting lasers

    Energy Technology Data Exchange (ETDEWEB)

    Böttge, C. N., E-mail: boettge@optics.arizona.edu; Hader, J.; Kilen, I.; Moloney, J. V. [College of Optical Sciences, The University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721 (United States); Koch, S. W. [College of Optical Sciences, The University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721 (United States); Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg (Germany)

    2014-12-29

    A fully microscopic many-body Maxwell–semiconductor Bloch model is used to investigate the influence of the non-equilibrium carrier dynamics on the short-pulse amplification in mode-locked semiconductor microlaser systems. The numerical solution of the coupled equations allows for a self-consistent investigation of the light–matter coupling dynamics, the carrier kinetics in the saturable absorber and the multiple-quantum-well gain medium, as well as the modification of the light field through the pulse-induced optical polarization. The influence of the pulse-induced non-equilibrium modifications of the carrier distributions in the gain medium and the saturable absorber on the single-pulse amplification in the laser cavity is identified. It is shown that for the same structure, quantum wells, and gain bandwidth the non-equilibrium carrier dynamics lead to two preferred operation regimes: one with pulses in the (sub-)100 fs-regime and one with multi-picosecond pulses. The recovery time of the saturable absorber determines in which regime the device operates.

  17. Occupational and consumer risk estimates for nanoparticles emitted by laser printers

    International Nuclear Information System (INIS)

    Haenninen, Otto; Brueske-Hohlfeld, Irene; Loh, Miranda; Stoeger, Tobias; Kreyling, Wolfgang; Schmid, Otmar; Peters, Annette

    2010-01-01

    Several studies have reported laser printers as significant sources of nanosized particles ( -1 ; particle number 1.1-3.1 x 10 9 d -1 ) were estimated to correspond to 4-13 (mass) or 12-34 (number) deaths per million persons exposed on the basis of epidemiological risk estimates for ambient particles. These risks are higher than the generally used definition of acceptable risk of 1 x 10 -6 , but substantially lower than the estimated risks due to ambient particles. Toxicological studies on ambient particles revealed consistent values for lowest observed effect levels (LOELs) which were converted into equivalent daily uptakes using allometric scaling. These LOEL uptakes were by a factor of about 330-1,000 (mass) and 1,000-2,500 (particle surface area) higher than estimated uptakes from printers. This toxicological assessment would indicate no significant health risks due to printer particles. Finally, our study suggests that particle number (not mass) and mass (not surface area) are the most conservative risk metrics for the epidemiological and toxicological risks presented here, respectively.

  18. Air-void embedded GaN-based light-emitting diodes grown on laser drilling patterned sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Hao; Li, Yufeng; Wang, Shuai; Feng, Lungang; Xiong, Han; Yun, Feng, E-mail: fyun2010@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics and Information Technology, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Su, Xilin [Shaanxi Supernova Lighting Technology Co., Ltd., Xi’an, Shaanxi 710075 (China)

    2016-07-15

    Air-void structure was introduced in GaN-based blue light-emitting diodes (LED) with one-step growth on periodic laser drilling patterned sapphire substrate, which free of any photolithography or wet/dry etching process. The influence of filling factors (FF) of air-void on crystal quality and optical performance were investigate. Transmission electron microscopy images and micro-Raman spectroscopy indicated that the dislocation was bended and the partially compressed strain was released. When FF was 55.43%, compared with the LED structure grown on flat sapphire substrate, the incorporation of air-void was observed to reduce the compressed stress of ∼20% and the luminance intensity has improved by 128%. Together with the simulated reflection intensity enhancement by finite difference time-domain (FDTD) method, we attribute the enhanced optical performance to the combined contribution of strong back-side light reflection of air-void and better GaN epitaxial quality. This approach provides a simple replacement to the conventional air-void embedded LED process.

  19. Upstream vertical cavity surface-emitting lasers for fault monitoring and localization in WDM passive optical networks

    Science.gov (United States)

    Wong, Elaine; Zhao, Xiaoxue; Chang-Hasnain, Connie J.

    2008-04-01

    As wavelength division multiplexed passive optical networks (WDM-PONs) are expected to be first deployed to transport high capacity services to business customers, real-time knowledge of fiber/device faults and the location of such faults will be a necessity to guarantee reliability. Nonetheless, the added benefit of implementing fault monitoring capability should only incur minimal cost associated with upgrades to the network. In this work, we propose and experimentally demonstrate a fault monitoring and localization scheme based on a highly-sensitive and potentially low-cost monitor in conjunction with vertical cavity surface-emitting lasers (VCSELs). The VCSELs are used as upstream transmitters in the WDM-PON. The proposed scheme benefits from the high reflectivity of the top distributed Bragg reflector (DBR) mirror of optical injection-locked (OIL) VCSELs to reflect monitoring channels back to the central office for monitoring. Characterization of the fault monitor demonstrates high sensitivity, low bandwidth requirements, and potentially low output power. The added advantage of the proposed fault monitoring scheme incurs only a 0.5 dB penalty on the upstream transmissions on the existing infrastructure.

  20. Chaos synchronization in vertical-cavity surface-emitting laser based on rotated polarization-preserved optical feedback.

    Science.gov (United States)

    Nazhan, Salam; Ghassemlooy, Zabih; Busawon, Krishna

    2016-01-01

    In this paper, the influence of the rotating polarization-preserved optical feedback on the chaos synchronization of a vertical-cavity surface-emitting laser (VCSEL) is investigated experimentally. Two VCSELs' polarization modes (XP) and (YP) are gradually rotated and re-injected back into the VCSEL. The anti-phase dynamics synchronization of the two polarization modes is evaluated using the cross-correlation function. For a fixed optical feedback, a clear relationship is found between the cross-correlation coefficient and the polarization angle θp. It is shown that high-quality anti-phase polarization-resolved chaos synchronization is achieved at higher values of θp. The maximum value of the cross-correlation coefficient achieved is -0.99 with a zero time delay over a wide range of θp beyond 65° with a poor synchronization dynamic at θp less than 65°. Furthermore, it is observed that the antiphase irregular oscillation of the XP and YP modes changes with θp. VCSEL under the rotating polarization optical feedback can be a good candidate as a chaotic synchronization source for a secure communication system.

  1. Single-mode temperature and polarisation-stable high-speed 850nm vertical cavity surface emitting lasers

    International Nuclear Information System (INIS)

    Nazaruk, D E; Blokhin, S A; Maleev, N A; Bobrov, M A; Pavlov, M M; Kulagina, M M; Vashanova, K A; Zadiranov, Yu M; Ustinov, V M; Kuzmenkov, A G; Vasil'ev, A P; Gladyshev, A G; Blokhin, A A; Salut, 7 Larina Str, N Novgorod, 603950 (Russian Federation))" data-affiliation=" (JSV Salut, 7 Larina Str, N Novgorod, 603950 (Russian Federation))" >Fefelov, A G

    2014-01-01

    A new intracavity-contacted design to realize temperature and polarization-stable high-speed single-mode 850 nm vertical cavity surface emitting lasers (VCSELs) grown by molecular-beam epitaxy is proposed. Temperature dependences of static and dynamic characteristics of the 4.5 pm oxide aperture InGaAlAs VCSEL were investigated in detail. Due to optimal gain-cavity detuning and enhanced carrier localization in the active region the threshold current remains below 0.75 mA for the temperature range within 20-90°C, while the output power exceeds 1 mW up to 90°C. Single-mode operation with side-mode suppression ratio higher than 30 dB and orthogonal polarization suppression ratio more than 18 dB was obtained in the whole current and temperature operation range. Device demonstrates serial resistance less than 250 Ohm, which is rather low for any type of single-mode short- wavelength VCSELs. VCSEL demonstrates temperature robust high-speed operation with modulation bandwidth higher than 13 GHz in the entire temperature range of 20-90°C. Despite high resonance frequency the high-speed performance of developed VCSELs was limited by the cut-off frequency of the parasitic low pass filter created by device resistances and capacitances. The proposed design is promising for single-mode high-speed VCSEL applications in a wide spectral range

  2. Measurement of carrier lifetime and linewidth enhancement factor for 1.5- mu m ridge-waveguide laser amplifier

    DEFF Research Database (Denmark)

    Storkfelt, Niels; Mikkelsen, B.; Olesen, D. S.

    1991-01-01

    Semiconductor optical amplifiers are used for investigation of the effective carrier lifetime and the linewidth enhancement factor. Contrary to semiconductor lasers, semiconductor optical amplifiers allow measurement at high levels of injected carrier density. The carrier lifetime and the linewid...

  3. Enhanced high harmonic generation driven by high-intensity laser in argon gas-filled hollow core waveguide

    International Nuclear Information System (INIS)

    Cassou, Kevin; Daboussi, Sameh; Hort, Ondrej; Descamps, Dominique; Petit, Stephane; Mevel, Eric; Constant, Eric; Guilbaud, Oilvier; Kazamias, Sophie

    2014-01-01

    We show that a significant enhancement of the photon flux produced by high harmonic generation can be obtained through guided configuration at high laser intensity largely above the saturation intensity. We identify two regimes. At low pressure, we observe an intense second plateau in the high harmonic spectrum in argon. At relatively high pressure, complex interplay between strongly time-dependent ionization processes and propagation effects leads to important spectral broadening without loss of spectral brightness. We show that the relevant parameter for this physical process is the product of laser peak power by gas pressure. We compare source performances with high harmonic generation using a gas jet in loose focusing geometry and conclude that the source developed is a good candidate for injection devices such as seeded soft x-ray lasers or free electron lasers in the soft x-ray range. (authors)

  4. Comparison of Mesa and Device Diameter Variation in Double Wafer-Fused Multi Quantum-Well, Long-Wavelength, Vertical Cavity Surface Emitting Lasers

    International Nuclear Information System (INIS)

    Menon, P.S.; Kandiah, K.; Burhanuddin Yeop Majlis; Shaari, S.

    2011-01-01

    Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) have profound advantages compared to traditional edge-emitting lasers offering improved properties with respect to mode selectivity, fibre coupling, threshold currents and integration into 2D arrays or with other electronic devices. Its commercialization is gaining momentum as the local and access network in optical communication system expand. Numerical modeling of LW-VCSEL utilizing wafer-fused InP-based multi-quantum wells (MQW) and GaAs-based distributed Bragg reflectors (DBRs) is presented in this paper. Emphasis is on the device and mesa/pillar diameter design parameter comparison and its effect on the device characteristics. (author)

  5. Mid-infrared PbTe vertical external cavity surface emitting laser on Si-substrate with above 1 W output power

    Science.gov (United States)

    Rahim, M.; Fill, M.; Felder, F.; Chappuis, D.; Corda, M.; Zogg, H.

    2009-12-01

    Mid-infrared vertical external cavity surface emitting lasers (VECSELs) emitting above 1 W output power in pulsed mode and up to 17 mW in continuous mode at -172 °C were realized. Emission wavelength changes from 5 μm at -172 °C to 3.6 μm at 20 °C heat sink temperature. The active medium is a one wavelength thick PbTe layer grown by molecular beam epitaxy on a Si-substrate. It is followed by a 2.5 pair Pb1-yEuyTe/EuTe epitaxial Bragg mirror. The cavity is completed with an external curved Pb1-yEuyTe/BaF2 mirror. The VECSEL is optically pumped with 1.55 μm wavelength laser and In-soldered to Cu heat sink. No microstructural processing is needed.

  6. Self-sustained pulsation in the oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

    International Nuclear Information System (INIS)

    Kuzmenkov, A. G.; Ustinov, V. M.; Sokolovskii, G. S.; Maleev, N. A.; Blokhin, S. A.; Deryagin, A. G.; Chumak, S. V.; Shulenkov, A. S.; Mikhrin, S. S.; Kovsh, A. R.; McRobbie, A. D.; Sibbett, W.; Cataluna, M. A.; Rafailov, E. U.

    2007-01-01

    The authors report the observation of strong self-pulsations in molecular-beam epitaxy-grown oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots. At continuous-wave operation, self-pulsations with pulse durations of 100-300 ps and repetition rates of 0.2-0.6 GHz were measured. The average optical power of the pulsations was 0.5-1.0 mW at the laser continuous-wave current values of 1.5-2.5 mA

  7. Emitting recombination of BCl molecules with chlorine atoms, resulting from dissociation of boron trichloride molecules under action of pulse CO2-laser radiation

    International Nuclear Information System (INIS)

    Nikonorov, A.P.; Moskvitina, E.N.; Kuzyakov, Yu.Ya.; Stepanov, P.I.

    1983-01-01

    Luminescence in BCl 3 is investigated. The results of measurements of gas temperature, BCl molecules concentration, and luminescence absolute intensity at boron trichloride presure of 40 mm pH and density of laser pulse energy from 1.7 up to 4.0 J/cm 2 are obtained. Nature of uninterrupted spectrum is considered. It is established that luminescence appearing in the BCl 3 under action of pulse CO 2 -laser is caused by reaction of emitting recombination of BCl molecules with chlorine atoms. Rate constant of this reaction in the range of 2300-3100 K is determined

  8. Passively mode-locked diode-pumped Tm3+:YLF laser emitting at 1.91 µm using a GaAs-based SESAM

    Science.gov (United States)

    Tyazhev, A.; Soulard, R.; Godin, T.; Paris, M.; Brasse, G.; Doualan, J.-L.; Braud, A.; Moncorgé, R.; Laroche, M.; Camy, P.; Hideur, A.

    2018-04-01

    We report on a diode-pumped Tm:YLF laser passively mode-locked with an InGaAs saturable absorber. The laser emits a train of 31 ps pulses at a wavelength of 1.91 µm with a repetition rate of 94 MHz and a maximum average power of 95 mW. A sustained and robust mode-locking with a signal-to-noise ratio of ~70 dB is obtained even at high relative air humidity, making this system attractive for applications requiring ultra-short pulses in the spectral window just below 2 µm.

  9. Vertical Cavity Surface Emitting Laser for Operation at 1.5 µm with Integral AlGaInAs/InP Bragg mirrors

    OpenAIRE

    Linnik, M.; Christou, A.

    2001-01-01

    The design and performance of a low threshold selectively oxidized Vertical Cavity Surface Emitting Laser (VCSEL) fabricated for operation at a wavelength of 1.55 µm is based on III-V quaternary semiconductor alloys and is grown by Molecular Beam Epitaxy technique. The theoretical investigation of the optical properties of the compound semiconductor alloys allows one to select the optimum materials for highly reflective Bragg mirrors. The simulation of the designed VCSEL performance has been ...

  10. Sm 3+-doped polymer optical waveguide amplifiers

    Science.gov (United States)

    Huang, Lihui; Tsang, Kwokchu; Pun, Edwin Yue-Bun; Xu, Shiqing

    2010-04-01

    Trivalent samarium ion (Sm 3+) doped SU8 polymer materials were synthesized and characterized. Intense red emission at 645 nm was observed under UV laser light excitation. Spectroscopic investigations show that the doped materials are suitable for realizing planar optical waveguide amplifiers. About 100 μm wide multimode Sm 3+-doped SU8 channel waveguides were fabricated using a simple UV exposure process. At 250 mW, 351 nm UV pump power, a signal enhancement of ˜7.4 dB at 645 nm was obtained for a 15 mm long channel waveguide.

  11. Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture

    Energy Technology Data Exchange (ETDEWEB)

    Leonard, J. T., E-mail: jtleona01@gmail.com; Yonkee, B. P.; Cohen, D. A.; Megalini, L.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Lee, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2016-01-18

    We demonstrate a III-nitride nonpolar vertical-cavity surface-emitting laser (VCSEL) with a photoelectrochemically (PEC) etched aperture. The PEC lateral undercut etch is used to selectively remove the multi-quantum well (MQW) region outside the aperture area, defined by an opaque metal mask. This PEC aperture (PECA) creates an air-gap in the passive area of the device, allowing one to achieve efficient electrical confinement within the aperture, while simultaneously achieving a large index contrast between core of the device (the MQW within the aperture) and the lateral cladding of the device (the air-gap formed by the PEC etch), leading to strong lateral confinement. Scanning electron microscopy and focused ion-beam analysis is used to investigate the precision of the PEC etch technique in defining the aperture. The fabricated single mode PECA VCSEL shows a threshold current density of ∼22 kA/cm{sup 2} (25 mA), with a peak output power of ∼180 μW, at an emission wavelength of 417 nm. The near-field emission profile shows a clearly defined single linearly polarized (LP) mode profile (LP{sub 12,1}), which is in contrast to the filamentary lasing that is often observed in III-nitride VCSELs. 2D mode profile simulations, carried out using COMSOL, give insight into the different mode profiles that one would expect to be displayed in such a device. The experimentally observed single mode operation is proposed to be predominantly a result of poor current spreading in the device. This non-uniform current spreading results in a higher injected current at the periphery of the aperture, which favors LP modes with high intensities near the edge of the aperture.

  12. Determination of Pesticides by Gas Chromatography Combined with Mass Spectrometry Using Femtosecond Lasers Emitting at 267, 400, and 800 nm as the Ionization Source.

    Science.gov (United States)

    Yang, Xixiang; Imasaka, Tomoko; Imasaka, Totaro

    2018-04-03

    A standard sample mixture containing 51 pesticides was separated by gas chromatography (GC), and the constituents were identified by mass spectrometry (MS) using femtosecond lasers emitting at 267, 400, and 800 nm as the ionization source. A two-dimensional display of the GC/MS was successfully used for the determination of these compounds. A molecular ion was observed for 38 of the compounds at 267 nm and for 30 of the compounds at 800 nm, in contrast to 27 among 50 compounds when electron ionization was used. These results suggest that the ultraviolet laser is superior to the near-infrared laser for molecular weight determinations and for a more reliable analysis of these compounds. In order to study the conditions for optimal ionization, the experimental data were examined using the spectral properties (i.e., the excitation and ionization energies and absorption spectra for the neutral and ionized species) obtained by quantum chemical calculations. A few molecules remained unexplained by the currently reported rules, requiring additional rules for developing a full understanding of the femtosecond ionization process. The pesticides in the homogenized matrix obtained from kabosu ( citrus sphaerocarpa) were measured using lasers emitting at 267 and 800 nm. The pesticides were clearly separated and measured on the two-dimensional display, especially for the data measured at 267 nm, suggesting that this technique would have potential for use in the practical trace analysis of the pesticides in the environment.

  13. Hollow cylindrical plasma filament waveguide with discontinuous finite thickness cladding

    International Nuclear Information System (INIS)

    Alshershby, Mostafa; Hao Zuoqiang; Lin Jingquan

    2013-01-01

    We have explored here a hollow cylindrical laser plasma multifilament waveguide with discontinuous finite thickness cladding, in which the separation between individual filaments is in the range of several millimeters and the waveguide cladding thickness is in the order of the microwave penetration depth. Such parameters give a closer representation of a realistic laser filament waveguide sustained by a long stable propagation of femtosecond (fs) laser pulses. We report how the waveguide losses depend on structural parameters like normalized plasma filament spacing, filament to filament distance or pitch, normal spatial frequency, and radius of the plasma filament. We found that for typical plasma parameters, the proposed waveguide can support guided modes of microwaves in extremely high frequency even with a cladding consisting of only one ring of plasma filaments. The loss of the microwave radiation is mainly caused by tunneling through the discontinuous finite cladding, i.e., confinement loss, and is weakly dependent on the plasma absorption. In addition, the analysis indicates that the propagation loss is fairly large compared with the loss of a plasma waveguide with a continuous infinite thickness cladding, while they are comparable when using a cladding contains more than one ring. Compared to free space propagation, this waveguide still presents a superior microwave transmission to some distance in the order of the filamentation length; thus, the laser plasma filaments waveguide may be a potential channel for transporting pulsed-modulated microwaves if ensuring a long and stable propagation of fs laser pulses.

  14. Quantum waveguides

    CERN Document Server

    Exner, Pavel

    2015-01-01

    This monograph explains the theory of quantum waveguides, that is, dynamics of quantum particles confined to regions in the form of tubes, layers, networks, etc. The focus is on relations between the confinement geometry on the one hand and the spectral and scattering properties of the corresponding quantum Hamiltonians on the other. Perturbations of such operators, in particular, by external fields are also considered. The volume provides a unique summary of twenty five years of research activity in this area and indicates ways in which the theory can develop further. The book is fairly self-contained. While it requires some broader mathematical physics background, all the basic concepts are properly explained and proofs of most theorems are given in detail, so there is no need for additional sources. Without a parallel in the literature, the monograph by Exner and Kovarik guides the reader through this new and exciting field.

  15. The impact of external optical feedback on the degradation behavior of high-power diode lasers

    DEFF Research Database (Denmark)

    Hempel, Martin; Chi, Mingjun; Petersen, Paul Michael

    2013-01-01

    The impact of external feedback on high-power diode laser degradation is studied. For this purpose early stages of gradual degradation are prepared by accelerated aging of 808-nm-emitting AlGaAs-based devices. While the quantum well that actually experiences the highest total optical load remains...... unaffected, severe impact is observed to the cladding layers and the waveguide. Consequently hardening of diode lasers for operation under external optical feedback must necessarily involve claddings and waveguide, into which the quantum well is embedded.......The impact of external feedback on high-power diode laser degradation is studied. For this purpose early stages of gradual degradation are prepared by accelerated aging of 808-nm-emitting AlGaAs-based devices. While the quantum well that actually experiences the highest total optical load remains...

  16. Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μm

    Energy Technology Data Exchange (ETDEWEB)

    Merghem, K.; Aubin, G.; Ramdane, A. [CNRS, Laboratory for Photonics and Nanostructures, Route de Nozay, 91460 Marcoussis (France); Teissier, R.; Baranov, A. N. [Institute of Electronics and Systems, CNRS UMR 5214, University of Montpellier, 34095 Montpellier (France); Monakhov, A. M. [Ioffe Institute, 194021 Saint Petersburg (Russian Federation)

    2015-09-14

    We demonstrate passive mode locking of a GaSb-based diode laser emitting at 2.1 μm. The active region of the studied device consists in two 10-nm-thick GaInSbAs/GaAlSbAs quantum wells. Passive mode locking has been achieved in a two-section laser with one of the sections used as a saturable absorber. A microwave signal at 20.6 GHz, measured in the electrical circuit of the absorber, corresponds to the fundamental photon round-trip frequency in the laser resonator. The linewidth of this signal as low as ∼10 kHz has been observed at certain operating conditions, indicating low phase noise mode-locked operation.

  17. Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μm

    International Nuclear Information System (INIS)

    Merghem, K.; Aubin, G.; Ramdane, A.; Teissier, R.; Baranov, A. N.; Monakhov, A. M.

    2015-01-01

    We demonstrate passive mode locking of a GaSb-based diode laser emitting at 2.1 μm. The active region of the studied device consists in two 10-nm-thick GaInSbAs/GaAlSbAs quantum wells. Passive mode locking has been achieved in a two-section laser with one of the sections used as a saturable absorber. A microwave signal at 20.6 GHz, measured in the electrical circuit of the absorber, corresponds to the fundamental photon round-trip frequency in the laser resonator. The linewidth of this signal as low as ∼10 kHz has been observed at certain operating conditions, indicating low phase noise mode-locked operation

  18. Electrically pumped all photonic crystal 2nd order DFB lasers arrays emitting at 2.3 μm

    Directory of Open Access Journals (Sweden)

    B. Adelin

    2017-03-01

    Full Text Available Single-mode, widely tunable laser diodes in the mid-infrared range are highly interesting for demanding spectroscopic applications involving multi-species discrimination. We report on an alternative approach using single frequency laser arrays. Single-mode laser arrays were fabricated using all-photonic-crystal electrically pumped distributed feedback cavities on GaSb. The fabricated lasers exhibit thresholds in the 3.2 kA/cm2 range in a continuous wave regime at room temperature. The maximum output power reaches 1 mW and single mode operation with a side-mode suppression ratio of 30 dB is demonstrated. These lasers were used to perform tunable diode laser absorption spectroscopy of several gases in standard gas cells. Continuous spectral coverage of a 40 nm band using 10 lasers seems an achievable goal using laser arrays with PhC lattice constant variations of 1 nm from laser to laser.

  19. Solid state microcavity dye lasers fabricated by nanoimprint lithography

    DEFF Research Database (Denmark)

    Nilsson, Daniel; Nielsen, Theodor; Kristensen, Anders

    2004-01-01

    propagating TE–TM modes. The laser cavity has the lateral shape of a trapezoid, supporting lasing modes by reflection on the vertical cavity walls. The solid polymer dye lasers emit laterally through one of the vertical cavity walls, when pumped optically through the top surface by means of a frequency...... doubled, pulsed Nd:YAG laser. Lasing in the wavelength region from 560 to 570 nm is observed from a laser with a side-length of 50 µm. In this proof of concept, the lasers are multimode with a mode wavelength separation of approximately 1.6 nm, as determined by the waveguide propagation constant......We present a solid state polymer microcavity dye laser, fabricated by thermal nanoimprint lithography (NIL) in a dye-doped thermoplast. The thermoplast poly-methylmethacrylate (PMMA) is used due to its high transparency in the visible range and its robustness to laser radiation. The laser dye...

  20. New configurations for short-pulses high power solid-state lasers: conception and realization of highly doped waveguide amplifiers/lasers grown by liquid phase epitaxy and demonstration of Y2SiO5: Yb and Lu2SiO5: Yb femtosecond lasers

    International Nuclear Information System (INIS)

    Thibault, F.

    2006-04-01

    Yb-doped yttrium and lutetium ortho-silicates, Y 2 SiO 5 :Yb and Lu 2 SiO 5 :Yb respectively, exhibit spectroscopic properties favorable to an efficient laser operation in both high power cw and femtosecond regime. Their first diode-pumped femtosecond operation demonstration lead to exceptional performances in terms of output power and efficiency. In order to realize compact and efficient solid-state laser devices using those materials, we chose a configuration with an Yb-doped medium planar waveguide geometry, grown by liquid phase epitaxy, face-pumped by a single laser diode bar. The growth of highly doped Y 2 SiO 5 :Yb layers, within a large range of compositions and thicknesses, was demonstrated. The refractive index increase due to the substitution of the various dopants is analyzed. The layers spectroscopic properties are similar to the bulk ones, with an noticeably higher crystalline quality. The Yb ion lifetime evolution with respect to its doping shows up a particularly low decrease, proof of a low concentration of extrinsic quenching centers. The covered YSO:24%Yb waveguides exhibit lower than 0.3 dB/cm propagation losses, and provided up to 2.9 dB/cm net amplification at 1082 nm with a single mode output. The realization of the first diode-pumped monolithic cw waveguide lasers was also demonstrated. For a 4% output coupler, they provided up to 340 mW at 1082 nm with a 14% slope efficiency. (author)

  1. Analysis of chemical degradation mechanism of phosphorescent organic light emitting devices by laser-desorption/ionization time-of-flight mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Rabelo de Moraes, Ines; Scholz, Sebastian; Luessem, Bjoern; Leo, Karl [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden (Germany)

    2010-07-01

    Phosphorescent organic light emitting diodes (OLEDs) have attracted much interest for their potential application in full color flat-panel displays and as an alternative lighting source. However, low efficiency, and the short operation lifetime, in particular in the case of blue emitting devices, are the major limitations for the current OLEDs commercialization. In order to overcome these limitations, a deep knowledge about the aging and the degradation mechanism is required. Our work focuses on the chemical degradation mechanism of different iridium based emitter materials like FIrpic (light blue) and Ir(ppy)3 (green), commonly used in OLEDs. For this purpose, the devices were aged by electrical driving until the luminance reached 6% of the initial luminance. The laser-desorption/ionization time-of-flight mass spectrometry was used to determine specific degradation pathways.

  2. Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors

    KAUST Repository

    Lee, Changmin

    2017-07-12

    Data communication based on white light generated using a near-ultraviolet (NUV) laser diode (LD) pumping red-, green-, and blue-emitting (RGB) phosphors was demonstrated for the first time. A III-nitride laser diode (LD) on a semipolar (2021) substrate emitting at 410 nm was used for the transmitter. The measured modulation bandwidth of the LD was 1 GHz, which was limited by the avalanche photodetector. The emission from the NUV LD and the RGB phosphor combination measured a color rendering index (CRI) of 79 and correlated color temperature (CCT) of 4050 K, indicating promise of this approach for creating high quality white lighting. Using this configuration, data was successfully transmitted at a rate of more than 1 Gbps. This NUV laser-based system is expected to have lower background noise from sunlight at the LD emission wavelength than a system that uses a blue LD due to the rapid fall off in intensity of the solar spectrum in the NUV spectral region.

  3. Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors.

    Science.gov (United States)

    Lee, Changmin; Shen, Chao; Cozzan, Clayton; Farrell, Robert M; Speck, James S; Nakamura, Shuji; Ooi, Boon S; DenBaars, Steven P

    2017-07-24

    Data communication based on white light generated using a near-ultraviolet (NUV) laser diode (LD) pumping red-, green-, and blue-emitting (RGB) phosphors was demonstrated for the first time. A III-nitride laser diode (LD) on a semipolar (2021¯)  substrate emitting at 410 nm was used for the transmitter. The measured modulation bandwidth of the LD was 1 GHz, which was limited by the avalanche photodetector. The emission from the NUV LD and the RGB phosphor combination measured a color rendering index (CRI) of 79 and correlated color temperature (CCT) of 4050 K, indicating promise of this approach for creating high quality white lighting. Using this configuration, data was successfully transmitted at a rate of more than 1 Gbps. This NUV laser-based system is expected to have lower background noise from sunlight at the LD emission wavelength than a system that uses a blue LD due to the rapid fall off in intensity of the solar spectrum in the NUV spectral region.

  4. Silica suspended waveguide splitter-based biosensor

    Science.gov (United States)

    Harrison, M. C.; Hawk, R. M.; Armani, A. M.

    2012-03-01

    Recently, a novel integrated optical waveguide 50/50 splitter was developed. It is fabricated using standard lithographic methods, a pair of etching steps and a laser reflow step. However, unlike other integrated waveguide splitters, the waveguide is elevated off of the silicon substrate, improving its interaction with biomolecules in solution and in a flow field. Additionally, because it is fabricated from silica, it has very low optical loss, resulting in a high signal-to-noise ratio, making it ideal for biosensing. By functionalizing the device using an epoxy-silane method using small samples and confining the protein solutions to the device, we enable highly efficient detection of CREB with only 1 μL of solution. Therefore, the waveguide coupler sensor is representative of the next generation of ultra-sensitive optical biosensors, and, when combined with microfluidic capabilities, it will be an ideal candidate for a more fully-realized lab-on-a-chip device.

  5. Spectrally high performing quantum cascade lasers

    Science.gov (United States)

    Toor, Fatima

    Quantum cascade (QC) lasers are versatile semiconductor light sources that can be engineered to emit light of almost any wavelength in the mid- to far-infrared (IR) and terahertz region from 3 to 300 mum [1-5]. Furthermore QC laser technology in the mid-IR range has great potential for applications in environmental, medical and industrial trace gas sensing [6-10] since several chemical vapors have strong rovibrational frequencies in this range and are uniquely identifiable by their absorption spectra through optical probing of absorption and transmission. Therefore, having a wide range of mid-IR wavelengths in a single QC laser source would greatly increase the specificity of QC laser-based spectroscopic systems, and also make them more compact and field deployable. This thesis presents work on several different approaches to multi-wavelength QC laser sources that take advantage of band-structure engineering and the uni-polar nature of QC lasers. Also, since for chemical sensing, lasers with narrow linewidth are needed, work is presented on a single mode distributed feedback (DFB) QC laser. First, a compact four-wavelength QC laser source, which is based on a 2-by-2 module design, with two waveguides having QC laser stacks for two different emission wavelengths each, one with 7.0 mum/11.2 mum, and the other with 8.7 mum/12.0 mum is presented. This is the first design of a four-wavelength QC laser source with widely different emission wavelengths that uses minimal optics and electronics. Second, since there are still several unknown factors that affect QC laser performance, results on a first ever study conducted to determine the effects of waveguide side-wall roughness on QC laser performance using the two-wavelength waveguides is presented. The results are consistent with Rayleigh scattering effects in the waveguides, with roughness effecting shorter wavelengths more than longer wavelengths. Third, a versatile time-multiplexed multi-wavelength QC laser system that

  6. Microfabricated Waveguide Atom Traps.

    Energy Technology Data Exchange (ETDEWEB)

    Jau, Yuan-Yu [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-09-01

    A nanoscale , microfabricated waveguide structure can in - principle be used to trap atoms in well - defined locations and enable strong photon-atom interactions . A neutral - atom platform based on this microfabrication technology will be prealigned , which is especially important for quantum - control applications. At present, there is still no reported demonstration of evanescent - field atom trapping using a microfabricated waveguide structure. We described the capabilities established by our team for future development of the waveguide atom - trapping technology at SNL and report our studies to overcome the technical challenges of loading cold atoms into the waveguide atom traps, efficient and broadband optical coupling to a waveguide, and the waveguide material for high - power optical transmission. From the atomic - physics and the waveguide modeling, w e have shown that a square nano-waveguide can be utilized t o achieve better atomic spin squeezing than using a nanofiber for first time.

  7. 1.3 μm wavelength vertical cavity surface emitting laser fabricated by orientation-mismatched wafer bonding: A prospect for polarization control

    Science.gov (United States)

    Okuno, Yae L.; Geske, Jon; Gan, Kian-Giap; Chiu, Yi-Jen; DenBaars, Steven P.; Bowers, John E.

    2003-04-01

    We propose and demonstrate a long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of a (311)B InP-based active region and (100) GaAs-based distributed Bragg reflectors (DBRs), with an aim to control the in-plane polarization of output power. Crystal growth on (311)B InP substrates was performed under low-migration conditions to achieve good crystalline quality. The VCSEL was fabricated by wafer bonding, which enables us to combine different materials regardless of their lattice and orientation mismatch without degrading their quality. The VCSEL was polarized with a power extinction ratio of 31 dB.

  8. A UWOC system based on a 6 m/5.2 Gbps 680 nm vertical-cavity surface-emitting laser

    Science.gov (United States)

    Li, Chung-Yi; Tsai, Wen-Shing

    2018-02-01

    This study proves that an underwater wireless optical communication (UWOC) based on a 6 m/5.2 Gbps 68 nm vertical-cavity surface-emitting laser (VCSEL)-based system is superior to a 405 nm UWOC system. This UWOC application is the first to use a VCSEL at approximately 680 nm. The experiment also proved that a 680 nm VCSEL has the same transmission distance as that of an approximately 405 nm laser diode. The 680 nm VCSEL has a 5.2 Gbps high transmission rate and can transmit up to 6 m. Thus, the setup is the best alternative solution for high-speed UWOC applications.

  9. Optical touch screen based on waveguide sensing

    DEFF Research Database (Denmark)

    Pedersen, Henrik Chresten; Jakobsen, Michael Linde; Hanson, Steen Grüner

    2011-01-01

    We disclose a simple, optical touch screen technique based on a planar injection molded polymer waveguide, a single laser, and a small linear detector array. The solution significantly reduces the complexity and cost as compared to existing optical touch technologies. Force detection of a touching...

  10. Chaotic waveguide-based resonators for microlasers

    Czech Academy of Sciences Publication Activity Database

    Méndez-Bermúdez, J. A.; Luna-Acosta, G. A.; Šeba, Petr; Pichugin, K. N.

    2003-01-01

    Roč. 67, č. 16 (2003), 161104/1-161104/4 ISSN 0163-1829 Institutional research plan: CEZ:AV0Z1010914 Keywords : waveguide * laser * resonators Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

  11. Planar optical waveguides for civil and military applications

    International Nuclear Information System (INIS)

    Lavers, C R

    2009-01-01

    There is significant military and civil interest in being able to detect chemical species adsorbed from air or present in aqueous solutions. Planar optical waveguide transmission properties are sensitive to changes in parameters such as refractive index or absorption and to light-emitting processes such as fluorescence. These changes modulate light travelling in optical waveguides, and so may be used as sensors for detecting biological and chemical agents, non-ionizing and ionizing electromagnetic radiation. Several waveguide systems have been studied theoretically and experimentally, and their responses to basic influences such as alcohol and UV radiation, and gamma rays determined.

  12. 20 Gbit/s error free transmission with ~850 nm GaAs-based vertical cavity surface emitting lasers (VCSELs) containing InAs-GaAs submonolayer quantum dot insertions

    Science.gov (United States)

    Lott, J. A.; Shchukin, V. A.; Ledentsov, N. N.; Stinz, A.; Hopfer, F.; Mutig, A.; Fiol, G.; Bimberg, D.; Blokhin, S. A.; Karachinsky, L. Y.; Novikov, I. I.; Maximov, M. V.; Zakharov, N. D.; Werner, P.

    2009-02-01

    We report on the modeling, epitaxial growth, fabrication, and characterization of 830-845 nm vertical cavity surface emitting lasers (VCSELs) that employ InAs-GaAs quantum dot (QD) gain elements. The GaAs-based VCSELs are essentially conventional in design, grown by solid-source molecular beam epitaxy, and include top and bottom gradedheterointerface AlGaAs distributed Bragg reflectors, a single selectively-oxidized AlAs waveguiding/current funneling aperture layer, and a quasi-antiwaveguiding microcavity. The active region consists of three sheets of InAs-GaAs submonolayer insertions separated by AlGaAs matrix layers. Compared to QWs the InAs-GaAs insertions are expected to offer higher exciton-dominated modal gain and improved carrier capture and retention, thus resulting in superior temperature stability and resilience to degradation caused by operating at the larger switching currents commonly employed to increase the data rates of modern optical communication systems. We investigate the robustness and temperature performance of our QD VCSEL design by fabricating prototype devices in a high-frequency ground-sourceground contact pad configuration suitable for on-wafer probing. Arrays of VCSELs are produced with precise variations in top mesa diameter from 24 to 36 μm and oxide aperture diameter from 1 to 12 μm resulting in VCSELs that operate in full single-mode, single-mode to multi-mode, and full multi-mode regimes. The single-mode QD VCSELs have room temperature threshold currents below 0.5 mA and peak output powers near 1 mW, whereas the corresponding values for full multi-mode devices range from about 0.5 to 1.5 mA and 2.5 to 5 mW. At 20°C we observe optical transmission at 20 Gb/s through 150 m of OM3 fiber with a bit error ratio better than 10-12, thus demonstrating the great potential of our QD VCSELs for applications in next-generation short-distance optical data communications and interconnect systems.

  13. Radiation emitting devices regulations

    International Nuclear Information System (INIS)

    1970-01-01

    The Radiation Emitting Devices Regulations are the regulations referred to in the Radiation Emitting Devices Act and relate to the operation of devices. They include standards of design and construction, standards of functioning, warning symbol specifications in addition to information relating to the seizure and detention of machines failing to comply with the regulations. The radiation emitting devices consist of the following: television receivers, extra-oral dental x-ray equipment, microwave ovens, baggage inspection x-ray devices, demonstration--type gas discharge devices, photofluorographic x-ray equipment, laser scanners, demonstration lasers, low energy electron microscopes, high intensity mercury vapour discharge lamps, sunlamps, diagnostic x-ray equipment, ultrasound therapy devices, x-ray diffraction equipment, cabinet x-ray equipment and therapeutic x-ray equipment

  14. Effect of the laser and light-emitting diode (LED) phototherapy on midpalatal suture bone formation after rapid maxilla expansion: a Raman spectroscopy analysis.

    Science.gov (United States)

    Rosa, Cristiane Becher; Habib, Fernando Antonio Lima; de Araújo, Telma Martins; Aragão, Juliana Silveira; Gomes, Rafael Soares; Barbosa, Artur Felipe Santos; Silveira, Landulfo; Pinheiro, Antonio L B

    2014-05-01

    The aim of this study was to analyze the effect of laser or light-emitting diode (LED) phototherapy on the bone formation at the midpalatal suture after rapid maxilla expansion. Twenty young adult male rats were divided into four groups with 8 days of experimental time: group 1, no treatment; group 2, expansion; group 3, expansion and laser irradiation; and group 4, expansion and LED irradiation. In groups 3 and 4, light irradiation was in the first, third, and fifth experimental days. In all groups, the expansion was accomplished with a helicoid 0.020" stainless steel orthodontic spring. A diode laser (λ780 nm, 70 mW, spot of 0.04 cm(2), t = 257 s, spatial average energy fluence (SAEF) of 18 J/cm(2)) or a LED (λ850 nm, 150 mW ± 10 mW, spot of 0.5 cm(2), t = 120 s, SAEF of 18 J/cm(2)) were used. The samples were analyzed by Raman spectroscopy carried out at midpalatal suture and at the cortical area close to the suture. Two Raman shifts were analyzed: ∼ 960 (phosphate hydroxyapatite) and ∼ 1,450 cm(-1) (lipids and protein). Data was submitted to statistical analysis. Significant statistical difference (p ≤ 0.05) was found in the hydroxyapatite (CHA) peaks among the expansion group and the expansion and laser or LED groups. The LED group presented higher mean peak values of CHA. No statistical differences were found between the treated groups as for collagen deposition, although LED also presented higher mean peak values. The results of this study using Raman spectral analysis indicate that laser and LED light irradiation improves deposition of CHA in the midpalatal suture after orthopedic expansion.

  15. Tunable All-Optical Wavelength Conversion Based on Cascaded SHG/DFG in a Ti:PPLN Waveguide Using a Single CW Control Laser

    DEFF Research Database (Denmark)

    Hu, Hao; Nouroozi, Rahman; Wang, Wenrui

    2012-01-01

    Tunable all-optical wavelength conversion (AOWC) of a 40-Gb/s RZ-OOK data signal based on cascaded second-harmonic generation (SHG) and difference-frequency generation (DFG) in a Ti:PPLN waveguide is demonstrated. Error-free performances with negligible power penalty are achieved for the wavelength...

  16. Parametric resonance in superconducting micron-scale waveguides

    International Nuclear Information System (INIS)

    Fomin, N.V.; Shalaev, O.L.; Shantsev, D.V.

    1997-01-01

    A parametric resonance due to temperature oscillations in superconducting micron-scale waveguides is considered. Oscillations of superconductor temperature are assumed to be induced by the irradiation of the waveguide with a laser beam. The laser power and parameters of the waveguide providing a possibility of parametric excitation have been calculated. It is shown that for a waveguide made of a YBa 2 Cu 3 O 7 microstrip with resonant frequency of 10 GHz a laser with a power of about 70 W/cm 2 is needed to excite oscillations. The effect can be used for the creation of high-sensitivity tuneable filters and optoelectric transformers on superconducting microstrips in the GHz range. copyright 1997 American Institute of Physics

  17. Interconnect Between a Waveguide and a Dielectric Waveguide Comprising an Impedance Matched Dielectric Lens

    Science.gov (United States)

    Decrossas, Emmanuel (Inventor); Chattopadhyay, Goutam (Inventor); Chahat, Nacer (Inventor); Tang, Adrian J. (Inventor)

    2016-01-01

    A lens for interconnecting a metallic waveguide with a dielectric waveguide is provided. The lens may be coupled a metallic waveguide and a dielectric waveguide, and minimize a signal loss between the metallic waveguide and the dielectric waveguide.

  18. Coherent random lasing from liquid waveguide gain channels with biological scatters

    Science.gov (United States)

    Zhang, Hong; Feng, Guoying; Wang, Shutong; Yang, Chao; Yin, Jiajia; Zhou, Shouhuan

    2014-12-01

    A unidirectional coherent random laser based on liquid waveguide gain channels with biological scatters is demonstrated. The optical feedback of the random laser is provided by both light scattering and waveguide confinement. This waveguide-scattering-feedback scheme not only reduces the pump threshold but also makes the output of random laser directional. The threshold of our random laser is about 11 μJ. The emission spectra can be sensitively tuned by changing pump position due to the micro/nano-scale randomness of butterfly wings. It shows the potential applications of optofluidic random lasers for bio-chemical sensors on-chip.

  19. Distributed Bragg grating frequency control in metallic nano lasers

    NARCIS (Netherlands)

    Marell, M.J.H.; Hill, M.T.

    2010-01-01

    We show that Bragg gratings can be readily incorporated into metallic nano-lasers which exploit waveguides with semiconductor cores, via modulation of the waveguide width. This provides a simple way to implement laser wavelength control.

  20. Influence of different approaches for dynamical performance optimization of monolithic passive colliding-pulse mode-locked laser diodes emitting around 850 nm

    Science.gov (United States)

    Prziwarka, T.; Klehr, A.; Wenzel, H.; Fricke, J.; Bugge, F.; Weyers, M.; Knigge, A.; Tränkle, G.

    2018-02-01

    Monolithic laser diodes which generate short infrared pulses in the picosecond and sub-picosecond ranges with high peak power are ideal sources for many applications like e.g. THz-time-domain spectroscopy (TDS) scanning systems. The achievable THz bandwidth is limited by the length of the optical pulses. Due to the fact that colliding-pulse mode locking (CPM) leads to the shortest pulses which could reached by passive mode locking, we experimentally investigated in detail the dynamical and electro optical performance of InGaAsP based quantum well CPM laser diodes with well-established vertical layer structures. Simple design modifications whose implementation is technically easy were realized. Improvements of the device performance in terms of pulse duration, output power, and noise properties are presented in dependence on the different adaptions. From the results we extract an optimized configuration with which we have reached pulses with durations of ≍1.5 ps, a peak power of > 1 W and a pulse-to-pulse timing jitter < 200 fs. The laser diodes emit pulses at a wavelength around 850 nm with a repetition frequency of ≍ 12.4 GHz and could be used as pump source for GaAs antennas to generate THz-radiation. Approaches for reducing pulse width, increasing output power, and improving noise performance are described.

  1. Graphene antidot lattice waveguides

    DEFF Research Database (Denmark)

    Pedersen, Jesper Goor; Gunst, Tue; Markussen, Troels

    2012-01-01

    We introduce graphene antidot lattice waveguides: nanostructured graphene where a region of pristine graphene is sandwiched between regions of graphene antidot lattices. The band gaps in the surrounding antidot lattices enable localized states to emerge in the central waveguide region. We model...... the waveguides via a position-dependent mass term in the Dirac approximation of graphene and arrive at analytical results for the dispersion relation and spinor eigenstates of the localized waveguide modes. To include atomistic details we also use a tight-binding model, which is in excellent agreement...... with the analytical results. The waveguides resemble graphene nanoribbons, but without the particular properties of ribbons that emerge due to the details of the edge. We show that electrons can be guided through kinks without additional resistance and that transport through the waveguides is robust against...

  2. Resonant Photonic States in Coupled Heterostructure Photonic Crystal Waveguides

    Directory of Open Access Journals (Sweden)

    Sabarinathan J

    2010-01-01

    Full Text Available Abstract In this paper, we study the photonic resonance states and transmission spectra of coupled waveguides made from heterostructure photonic crystals. We consider photonic crystal waveguides made from three photonic crystals A, B and C, where the waveguide heterostructure is denoted as B/A/C/A/B. Due to the band structure engineering, light is confined within crystal A, which thus act as waveguides. Here, photonic crystal C is taken as a nonlinear photonic crystal, which has a band gap that may be modified by applying a pump laser. We have found that the number of bound states within the waveguides depends on the width and well depth of photonic crystal A. It has also been found that when both waveguides are far away from each other, the energies of bound photons in each of the waveguides are degenerate. However, when they are brought close to each other, the degeneracy of the bound states is removed due to the coupling between them, which causes these states to split into pairs. We have also investigated the effect of the pump field on photonic crystal C. We have shown that by applying a pump field, the system may be switched between a double waveguide to a single waveguide, which effectively turns on or off the coupling between degenerate states. This reveals interesting results that can be applied to develop new types of nanophotonic devices such as nano-switches and nano-transistors.

  3. Optical waveguide demultiplexer

    International Nuclear Information System (INIS)

    Gajdaj, Yu.O.; Maslyukyivs'kij, R.M.; Sirota, A.V.

    2009-01-01

    For channels division in fibre-optical networks with wavelength multiplexing, the planar waveguide together with a prism coupler is offered for using. The planar waveguide fulfils a role of a dispersing unit, and prism coupler is the selector of optical channels. The parameters of the planar waveguide which provide maximal space division of adjacent information channels in networks with coarse wavelength multiplexing are calculated

  4. Experiences with rectangular waveguide

    International Nuclear Information System (INIS)

    Beltran, J.; Sepulveda, J. J.; Navarro, E. A.

    2000-01-01

    A simple and didactic experimental arrangement is presented to show wave propagation along a structure with translational symmetry, particularly the rectangular waveguide. Parameters of this waveguide as cutoff frequency, guide wavelength and field distribution of fundamental mode can be measured. For this purpose a large paralelepipedical waveguide structure is designed and built, its dimensions can be varied in order to change its parameters. (Author) 9 refs

  5. Investigation and modelling of rare-earth activated waveguide structures

    International Nuclear Information System (INIS)

    Wolinski, W.; Malinowski, M.; Mossakowska-Wyszynska, A.; Piramidowicz, R.; Szczepanski, P.

    2005-01-01

    In this paper the overview of the recent study on the rare-earth activated waveguides performed in the Optoelectronic Department of IMiO is presented. We reported on the development of rare earth-doped fluorozirconate (ZBLAN) glass fibers that allow a construction of a new family of visible and ultraviolet fiber lasers pumped by upconversion. Especially the performance of holmium devices is presented. The properties of laser planar waveguides obtained by the LPE process and the growth conditions of rare earths doped YAG layers are presented. In this paper we present also the theoretical study of the nonlinear operation of planar waveguide laser, as an example the microdisk Nd:YAG structure is discussed. We derived an approximate formula which relates the small signal gain in the Nd:YAG active medium and the laser characteristics, obtained for whispering-gallery modes and radial modes, to the output power and real parameters of the laser structure (authors)

  6. Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance

    Energy Technology Data Exchange (ETDEWEB)

    Chai, G. M. T. [Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Johor Bahru 81310 (Malaysia); Hosea, T. J. C., E-mail: j.hosea@surrey.ac.uk [Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Johor Bahru 81310 (Malaysia); Advanced Technology Institute and Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Fox, N. E.; Hild, K.; Ikyo, A. B.; Marko, I. P.; Sweeney, S. J. [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Bachmann, A.; Arafin, S.; Amann, M.-C. [Walter Schottky Institut, Technische Universität Munchen, Am Coulombwall 4, D-85748 Garching (Germany)

    2014-01-07

    We report angle dependent and temperature dependent (9 K–300 K) photo-modulated reflectance (PR) studies on vertical-cavity surface-emitting laser (VCSEL) structures, designed for 2.3 μm mid-infrared gas sensing applications. Changing the temperature allows us to tune the energies of the quantum well (QW) transitions relative to the VCSEL cavity mode (CM) energy. These studies show that this VCSEL structure has a QW-CM offset of 21 meV at room temperature. Consequently the QW ground-state transition comes into resonance with the CM at 220 ± 2 K. The results from these PR studies are closely compared with those obtained in a separate study of actual operating devices and show how the PR technique may be useful for device optimisation without the necessity of having first to process the wafers into working devices.

  7. Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance

    International Nuclear Information System (INIS)

    Chai, G. M. T.; Hosea, T. J. C.; Fox, N. E.; Hild, K.; Ikyo, A. B.; Marko, I. P.; Sweeney, S. J.; Bachmann, A.; Arafin, S.; Amann, M.-C.

    2014-01-01

    We report angle dependent and temperature dependent (9 K–300 K) photo-modulated reflectance (PR) studies on vertical-cavity surface-emitting laser (VCSEL) structures, designed for 2.3 μm mid-infrared gas sensing applications. Changing the temperature allows us to tune the energies of the quantum well (QW) transitions relative to the VCSEL cavity mode (CM) energy. These studies show that this VCSEL structure has a QW-CM offset of 21 meV at room temperature. Consequently the QW ground-state transition comes into resonance with the CM at 220 ± 2 K. The results from these PR studies are closely compared with those obtained in a separate study of actual operating devices and show how the PR technique may be useful for device optimisation without the necessity of having first to process the wafers into working devices

  8. InGaN multiple-quantum-well epifilms on GaN-sillicon substrates for microcavities and surface-emitting lasers

    International Nuclear Information System (INIS)

    Lee, June Key; Cho, Hoon; Kim, Bok Hee; Park, Si Hyun; Gu, Erdan; Watson, Ian; Dawson, Martin

    2006-01-01

    We report the processing of InGaN/GaN epifilms on GaN-silicon substrates. High-quality InGaN/GaN multi-quantum wells (MQWs) were grown on GaN-silicon substrates, and their membranes were successfully fabricated using a selective wet etching of silicon followed by a dry etching of the AlGaN buffer layer. With atomic force microscope (AFM) measurements and photoluminescence (PL) measurements, we investigated the physical and the optical properties of the InGaN/GaN MQWs membranes. On the InGaN/GaN MQW membranes, dielectric distributed Bragg reflector (DBRs) were successfully deposited, which give, new possibilities for use in GaN microcavity and surface-emitting laser fabrication.

  9. GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

    Science.gov (United States)

    Lee, SeungGeun; Forman, Charles A.; Lee, Changmin; Kearns, Jared; Young, Erin C.; Leonard, John T.; Cohen, Daniel A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

    2018-06-01

    We report the first demonstration of III–nitride vertical-cavity surface-emitting lasers (VCSELs) with tunnel junction (TJ) intracavity contacts grown completely by metal–organic chemical vapor deposition (MOCVD). For the TJs, n++-GaN was grown on in-situ activated p++-GaN after buffered HF surface treatment. The electrical properties and epitaxial morphologies of the TJs were first investigated on TJ LED test samples. A VCSEL with a TJ intracavity contact showed a lasing wavelength of 408 nm, a threshold current of ∼15 mA (10 kA/cm2), a threshold voltage of 7.8 V, a maximum output power of 319 µW, and a differential efficiency of 0.28%.

  10. Gamma-ray vulnerability of light-emitting diodes injection-laser diodes and pin-photodiodes for 1.3 μm wavelength-fiber optics

    International Nuclear Information System (INIS)

    Breuze, G.; Serre, J.

    1992-01-01

    With the increasing use of optical data links, it becomes essential to test for radiation vulnerability not only the transmission support - fiber and cable - but also fiber-end electro-optical components that could be exposed to hostile environment. Presently there is a significant number of radiation tests of optical fibers [1,2,3[. Here are only given a few results obtained on gradient index multimode fibers with and without phosphor. These data provide an important contribution to the improvement of all standard electro-optical pigtailed components working on the 1.3 μm wavelength: light-emitting diodes (LED), injection-laser diode modules (LDM) and pin-photodiodes (PD). Multicomponent LDM behaviour under CO 60 exposure was extensively tested. Hardened optical data links allow now to ensure medium data transmission rates on appreciable fiber - lengths despite medium steady - state gamma-ray exposure

  11. Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Kageyama, Takeo; Miyamoto, Tomoyuki; Ohta, Masataka; Matsuura, Tetsuya; Matsui, Yasutaka; Furuhata, Tatsuya; Koyama, Fumio

    2004-01-01

    A surfactant effect of antimony (Sb) on highly strained GaInAs quantum wells (QWs) was studied by molecular beam epitaxy. Noticeable improvement of the photoluminescence (PL) was observed by adding the dilute Sb. The QWs showed an increased PL intensity and narrow linewidth of 23 meV for the wavelength range up to 1180 nm. An atomic force microscope study showed a flattened surface morphology by the introduction of the Sb. Broad-area lasers with a GaInAsSb/GaAs double-QW active layer emitting at 1170 nm showed a low threshold current density of 125 A/cm 2 per well for an infinite cavity length

  12. Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μm

    International Nuclear Information System (INIS)

    Moreau, G.; Azouigui, S.; Cong, D.-Y.; Merghem, K.; Martinez, A.; Patriarche, G.; Ramdane, A.; Lelarge, F.; Rousseau, B.; Dagens, B.; Poingt, F.; Accard, A.; Pommereau, F.

    2006-01-01

    The authors report the growth of 6-, 9-, and 12-layer InAs/InP quantum-dash-in-a-well (DWELL) laser structures using gas source molecular beam epitaxy. Broad area laser performance has been investigated as a function of number of layers. The highest modal gain at 48 cm -1 is achieved for an optimized nine-DWELL layer structure. The effect of layer stacking and p-type doping on the characteristic temperature is also reported. Nine-DWELL layer single mode ridge waveguide lasers showed high slope efficiency (0.2 W/A per facet) and output power (P out =20 mW), close to those of conventional quantum well devices

  13. Analysis of x-ray spectra emitted from highly ionized atoms in the vacuum spark and laser-produced high power plasma sources

    International Nuclear Information System (INIS)

    Mandelbaum, P.

    1987-05-01

    The interest in atomic spectroscopy has greatly been reinforced in the last ten years. This gain of interest is directly related to the developments in different fields of research where hot plasmas are created. These fields include in particular controlled thermonuclear fusion research by means of inertial or magnetic confinement approaches and also the most recent efforts to achieve lasers in the XUV region. The present work is based on the specific contribution of the atomic spectroscopy group at the Hebrew University. The recent development of both theoretical and experimental tools allowed us to progress in the understanding of the highly ionized states of heavy elements. In this work the low-inductance vacuum-spark developed at the Hebrew University was used as the hot plasma source. The spectra were recorded in the 7-300 A range by means of a high-resolution extreme-grazing-incidence spectrometer developed at the Racah Institute by Profs. J.L. Schwob and B.S. Fraenkel. To the extend the spectroscopic studies to higher-Z atoms, the laser-produced plasma facility at Soreq Nuclear Center was used. In this work the spectra of the sixth row elements were recorded in the x-rays by means of a crystal spectrometer. All these experimental systems are briefly described in chapter one. Chapter two deals with the theoretical methods used in the present work for the atomic calculations. Chapter three deals with the spectra of elements of the fifth row emitted from the vacuum-spark in the 30-150 A range. These spectra as experimental data were used in order to test ab-initio computations along the NiI sequence 3d-nl transitions. The results of this work are presented in chapter four. Chapter five is devoted to the measurement and analysis of spectra emitted from the vacuum-spark by rare-earth elements. (author)

  14. Influence of laser lift-off on optical and structural properties of InGaN/GaN vertical blue light emitting diodes

    Directory of Open Access Journals (Sweden)

    M. H. Doan

    2012-06-01

    Full Text Available The influences of the laser lift-off (LLO process on the InGaN/GaN blue light emitting diode (LED structures, grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition, have been comprehensively investigated. The vertical LED structures on Cu carriers are fabricated using electroplating, LLO, and inductively coupled plasma etching processes sequentially. A detailed study is performed on the variation of defect concentration and optical properties, before and after the LLO process, employing high-resolution transmission electron microscopy (HRTEM, scanning electron microscopy (SEM observations, cathodoluminescence (CL, photoluminescence (PL, and high-resolution X-ray diffraction (HRXRD measurements. The SEM observations on the distribution of dislocations after the LLO show well that even the GaN layer near to the multiple quantum wells (MQWs is damaged. The CL measurements reveal that the peak energy of the InGaN/GaN MQW emission exhibits a blue-shift after the LLO process in addition to a reduced intensity. These behaviors are attributed to a diffusion of indium through the defects created by the LLO and creation of non-radiative recombination centers. The observed phenomena thus suggest that the MQWs, the active region of the InGaN/GaN light emitting diodes, may be damaged by the LLO process when thickness of the GaN layer below the MQW is made to be 5 μm, a conventional thickness. The CL images on the boundary between the KrF irradiated and non-irradiated regions suggest that the propagation of the KrF laser beam and an accompanied recombination enhanced defect reaction, rather than the propagation of a thermal shock wave, are the main origin of the damage effects of the LLO process on the InGaN/GaN MQWs and the n-GaN layer as well.

  15. Reconfigurable optical manipulation by phase change material waveguides.

    Science.gov (United States)

    Zhang, Tianhang; Mei, Shengtao; Wang, Qian; Liu, Hong; Lim, Chwee Teck; Teng, Jinghua

    2017-05-25

    Optical manipulation by dielectric waveguides enables the transportation of particles and biomolecules beyond diffraction limits. However, traditional dielectric waveguides could only transport objects in the forward direction which does not fulfill the requirements of the next generation lab-on-chip system where the integrated manipulation system should be much more flexible and multifunctional. In this work, bidirectional transportation of objects on the nanoscale is demonstrated on a rectangular waveguide made of the phase change material Ge 2 Sb 2 Te 5 (GST) by numerical simulations. Either continuous pushing forces or pulling forces are generated on the trapped particles when the GST is in the amorphous or crystalline phase. With the technique of a femtosecond laser induced phase transition on the GST, we further proposed a reconfigurable optical trap array on the same waveguide. This work demonstrates GST waveguide's potential of achieving multifunctional manipulation of multiple objects on the nanoscale with plausible optical setups.

  16. Terahertz spoof surface-plasmon-polariton subwavelength waveguide

    KAUST Repository

    Zhang, Ying; Xu, Yuehong; Tian, Chunxiu; Xu, Quan; Zhang, Xueqian; Li, Yanfeng; Zhang, Xixiang; Han, Jiaguang; Zhang, Weili

    2017-01-01

    Surface plasmon polaritons (SPPs) with the features of subwavelength confinement and strong enhancements have sparked enormous interest. However, in the terahertz regime, due to the perfect conductivities of most metals, it is hard to realize the strong confinement of SPPs, even though the propagation loss could be sufficiently low. One main approach to circumvent this problem is to exploit spoof SPPs, which are expected to exhibit useful subwavelength confinement and relative low propagation loss at terahertz frequencies. Here we report the design, fabrication, and characterization of terahertz spoof SPP waveguides based on corrugated metal surfaces. The various waveguide components, including a straight waveguide, an S-bend waveguide, a Y-splitter, and a directional coupler, were experimentally demonstrated using scanning near-field terahertz microscopy. The proposed waveguide indeed enables propagation, bending, splitting, and coupling of terahertz SPPs and thus paves a new way for the development of flexible and compact plasmonic circuits operating at terahertz frequencies. (C) 2017 Chinese Laser Press

  17. Terahertz spoof surface-plasmon-polariton subwavelength waveguide

    KAUST Repository

    Zhang, Ying

    2017-12-11

    Surface plasmon polaritons (SPPs) with the features of subwavelength confinement and strong enhancements have sparked enormous interest. However, in the terahertz regime, due to the perfect conductivities of most metals, it is hard to realize the strong confinement of SPPs, even though the propagation loss could be sufficiently low. One main approach to circumvent this problem is to exploit spoof SPPs, which are expected to exhibit useful subwavelength confinement and relative low propagation loss at terahertz frequencies. Here we report the design, fabrication, and characterization of terahertz spoof SPP waveguides based on corrugated metal surfaces. The various waveguide components, including a straight waveguide, an S-bend waveguide, a Y-splitter, and a directional coupler, were experimentally demonstrated using scanning near-field terahertz microscopy. The proposed waveguide indeed enables propagation, bending, splitting, and coupling of terahertz SPPs and thus paves a new way for the development of flexible and compact plasmonic circuits operating at terahertz frequencies. (C) 2017 Chinese Laser Press

  18. 18-THz-wide optical frequency comb emitted from monolithic passively mode-locked semiconductor quantum-well laser

    Science.gov (United States)

    Lo, Mu-Chieh; Guzmán, Robinson; Ali, Muhsin; Santos, Rui; Augustin, Luc; Carpintero, Guillermo

    2017-10-01

    We report on an optical frequency comb with 14nm (~1.8 THz) spectral bandwidth at -3 dB level that is generated using a passively mode-locked quantum-well (QW) laser in photonic integrated circuits (PICs) fabricated through an InP generic photonic integration technology platform. This 21.5-GHz colliding-pulse mode-locked laser cavity is defined by on-chip reflectors incorporating intracavity phase modulators followed by an extra-cavity SOA as booster amplifier. A 1.8-THz-wide optical comb spectrum is presented with ultrafast pulse that is 0.35-ps-wide. The radio frequency beat note has a 3-dB linewidth of 450 kHz and 35-dB SNR.

  19. The optimisation of the laser-induced forward transfer process for fabrication of polyfluorene-based organic light-emitting diode pixels

    Science.gov (United States)

    Shaw-Stewart, James; Mattle, Thomas; Lippert, Thomas; Nagel, Matthias; Nüesch, Frank; Wokaun, Alexander

    2013-08-01

    Laser-induced forward transfer (LIFT) has already been used to fabricate various types of organic light-emitting diodes (OLEDs), and the process itself has been optimised and refined considerably since OLED pixels were first demonstrated. In particular, a dynamic release layer (DRL) of triazene polymer has been used, the environmental pressure has been reduced down to a medium vacuum, and the donor receiver gap has been controlled with the use of spacers. Insight into the LIFT process's effect upon OLED pixel performance is presented here, obtained through optimisation of three-colour polyfluorene-based OLEDs. A marked dependence of the pixel morphology quality on the cathode metal is observed, and the laser transfer fluence dependence is also analysed. The pixel device performances are compared to conventionally fabricated devices, and cathode effects have been looked at in detail. The silver cathode pixels show more heterogeneous pixel morphologies, and a correspondingly poorer efficiency characteristics. The aluminium cathode pixels have greater green electroluminescent emission than both the silver cathode pixels and the conventionally fabricated aluminium devices, and the green emission has a fluence dependence for silver cathode pixels.

  20. The optimisation of the laser-induced forward transfer process for fabrication of polyfluorene-based organic light-emitting diode pixels

    Energy Technology Data Exchange (ETDEWEB)

    Shaw-Stewart, James, E-mail: james.shaw-stewart@ed.ac.uk [Materials Group, General Energies Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland); Laboratory for Functional Polymers, Empa Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf (Switzerland); Mattle, Thomas [Materials Group, General Energies Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland); Lippert, Thomas, E-mail: thomas.lippert@psi.ch [Materials Group, General Energies Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland); Nagel, Matthias [Laboratory for Functional Polymers, Empa Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf (Switzerland); Nüesch, Frank, E-mail: frank.nueesch@empa.ch [Laboratory for Functional Polymers, Empa Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf (Switzerland); Section de science et génie des matériaux, EPFL, CH-1015 Lausanne (Switzerland); Wokaun, Alexander [Materials Group, General Energies Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland)

    2013-08-01

    Laser-induced forward transfer (LIFT) has already been used to fabricate various types of organic light-emitting diodes (OLEDs), and the process itself has been optimised and refined considerably since OLED pixels were first demonstrated. In particular, a dynamic release layer (DRL) of triazene polymer has been used, the environmental pressure has been reduced down to a medium vacuum, and the donor receiver gap has been controlled with the use of spacers. Insight into the LIFT process's effect upon OLED pixel performance is presented here, obtained through optimisation of three-colour polyfluorene-based OLEDs. A marked dependence of the pixel morphology quality on the cathode metal is observed, and the laser transfer fluence dependence is also analysed. The pixel device performances are compared to conventionally fabricated devices, and cathode effects have been looked at in detail. The silver cathode pixels show more heterogeneous pixel morphologies, and a correspondingly poorer efficiency characteristics. The aluminium cathode pixels have greater green electroluminescent emission than both the silver cathode pixels and the conventionally fabricated aluminium devices, and the green emission has a fluence dependence for silver cathode pixels.

  1. Planar waveguide nanolaser configured by dye-doped hybrid nanofilm on substrate

    Science.gov (United States)

    Tikhonov, E. A.; Yashchuk, V. P.; Telbiz, G. M.

    2018-04-01

    Dye-doped hybrid silicate/titanium nanofilms on the glass substrate structures of asymmetrical waveguides were studied by way of laser systems. The threshold, spatial and spectral features of the laser oscillation of genuine and hollow waveguides were determined. The pattern of stimulated radiation included two concurrent processes: single-mode waveguide lasing and lateral small divergence emission. Comparison of the open angle of the lateral beams and grazing angles of the waveguide lasing mode provides an insight into the effect of leaky mode emission followed by Lummer-Gehrcke interference.

  2. Influence of irradiation conditions on polytetrafluoroethylen ablation induced by soft x-rays emitted from laser-produced plasma

    Czech Academy of Sciences Publication Activity Database

    Viskup, Richard; Juha, Libor; Krása, Josef

    2004-01-01

    Roč. 54, č. 3 (2004), s. 277-284 ISSN 0323-0465 R&D Projects: GA MŠk LA 055; GA MŠk 1P04LA235; GA MŠk LN00A100 Institutional research plan: CEZ:AV0Z1010921 Keywords : ablation * X-rays Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.513, year: 2004

  3. Single crystal silicon carbide detector of emitted ions and soft x rays from power laser-generated plasmas

    Czech Academy of Sciences Publication Activity Database

    Torrisi, L.; Foti, G.; Giuffrida, L.; Puglisi, D.; Wolowski, J.; Badziak, J.; Parys, P.; Rosinski, M.; Margarone, D.; Krása, Josef; Velyhan, Andriy; Ullschmied, Jiří

    2009-01-01

    Roč. 105, č. 12 (2009), 123304/1-123304/7 ISSN 0021-8979 R&D Projects: GA AV ČR IAA100100715 Institutional research plan: CEZ:AV0Z10100523; CEZ:AV0Z20430508 Keywords : laser-produced plasma * SiC detector * ion collector Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 2.072, year: 2009

  4. Exact equivalent straight waveguide model for bent and twisted waveguides

    DEFF Research Database (Denmark)

    Shyroki, Dzmitry

    2008-01-01

    Exact equivalent straight waveguide representation is given for a waveguide of arbitrary curvature and torsion. No assumptions regarding refractive index contrast, isotropy of materials, or particular morphology in the waveguide cross section are made. This enables rigorous full-vector modeling...... of in-plane curved or helically wound waveguides with use of available simulators for straight waveguides without the restrictions of the known approximate equivalent-index formulas....

  5. Compound semiconductor optical waveguide switch

    Science.gov (United States)

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  6. Arrayed waveguide Sagnac interferometer.

    Science.gov (United States)

    Capmany, José; Muñoz, Pascual; Sales, Salvador; Pastor, Daniel; Ortega, Beatriz; Martinez, Alfonso

    2003-02-01

    We present a novel device, an arrayed waveguide Sagnac interferometer, that combines the flexibility of arrayed waveguides and the wide application range of fiber or integrated optics Sagnac loops. We form the device by closing an array of wavelength-selective light paths provided by two arrayed waveguides with a single 2 x 2 coupler in a Sagnac configuration. The equations that describe the device's operation in general conditions are derived. A preliminary experimental demonstration is provided of a fiber prototype in passive operation that shows good agreement with the expected theoretical performance. Potential applications of the device in nonlinear operation are outlined and discussed.

  7. Curves of growth of spectral lines emitted by a laser-induced plasma: influence of the temporal evolution and spatial inhomogeneity of the plasma

    Energy Technology Data Exchange (ETDEWEB)

    Aguilera, J.A.; Bengoechea, J.; Aragon, C. E-mail: carlos.aragon@unavarra.es

    2003-02-03

    The curves of growth (COG) of five Fe I lines emitted from a laser-induced plasma, generated with Fe-Ni alloys in air at atmospheric pressure, have been investigated. Spectral lines with different energy levels and line widths, emitted with a broad range of optical depths, have been included in the study in order to check the validity of theoretical models proposed for COG generation, based in the radiative transfer within a plasma in local thermodynamic equilibrium. The COGs have been measured at time windows of 4-5 {mu}s and 15-18 {mu}s. The Stark widths of the Fe I lines have been obtained, and the line widths have been determined by measuring the plasma electron density at the time windows selected. It is shown that at a time window of 4-5 {mu}s, the inhomogeneity of the plasma magnitudes has an important influence on the COGs of intense lines. For this time window, a two-region model of the plasma has been used to generate theoretical COGs that describe satisfactorily the experimental curves of all the lines using a single set of plasma parameters. The results reveal the existence of considerable gradients between the inner and the outer plasma regions in the temperature (9400-7800 K) and in the density of Fe atoms (4x10{sup 16}-0.02x10{sup 16} cm{sup -3} for a sample with 100% Fe). On the contrary, at the time window 15-18 {mu}s, at which the plasma has suffered most of its expansion and cooling process, the COGs of all the lines may be described by a single-region model, corresponding to a plasma with uniform temperature (6700 K) and density of Fe atoms (0.06x10{sup 16} cm{sup -3} for a sample with 100% Fe). It is also shown that at initial times, the plasma inhomogeneity has an important effect in the line profiles of intense spectral lines, which are described by using the two-region model of the laser-induced plasma.

  8. Optical Waveguide Lightmode Spectroscopy (OWLS) as a Sensor for Thin Film and Quantum Dot Corrosion

    OpenAIRE

    Yu, Hao; Eggleston, Carrick M.; Chen, Jiajun; Wang, Wenyong; Dai, Qilin; Tang, Jinke

    2012-01-01

    Optical waveguide lightmode spectroscopy (OWLS) is usually applied as a biosensor system to the sorption-desorption of proteins to waveguide surfaces. Here, we show that OWLS can be used to monitor the quality of oxide thin film materials and of coatings of pulsed laser deposition synthesized CdSe quantum dots (QDs) intended for solar energy applications. In addition to changes in data treatment and experimental procedure, oxide- or QD-coated waveguide sensors must be synthesized. We synthesi...

  9. Omnidirectional optical waveguide

    Science.gov (United States)

    Bora, Mihail; Bond, Tiziana C.

    2016-08-02

    In one embodiment, a system includes a scintillator material; a detector coupled to the scintillator material; and an omnidirectional waveguide coupled to the scintillator material, the omnidirectional waveguide comprising: a plurality of first layers comprising one or more materials having a refractive index in a first range; and a plurality of second layers comprising one or more materials having a refractive index in a second range, the second range being lower than the first range, a plurality of interfaces being defined between alternating ones of the first and second layers. In another embodiment, a method includes depositing alternating layers of a material having a relatively high refractive index and a material having a relatively low refractive index on a substrate to form an omnidirectional waveguide; and coupling the omnidirectional waveguide to at least one surface of a scintillator material.

  10. Plastic lab-on-a-chip for fluorescence excitation with integrated organic semiconductor lasers.

    Science.gov (United States)

    Vannahme, Christoph; Klinkhammer, Sönke; Lemmer, Uli; Mappes, Timo

    2011-04-25

    Laser light excitation of fluorescent markers offers highly sensitive and specific analysis for bio-medical or chemical analysis. To profit from these advantages for applications in the field or at the point-of-care, a plastic lab-on-a-chip with integrated organic semiconductor lasers is presented here. First order distributed feedback lasers based on the organic semiconductor tris(8-hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2-methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM), deep ultraviolet induced waveguides, and a nanostructured microfluidic channel are integrated into a poly(methyl methacrylate) (PMMA) substrate. A simple and parallel fabrication process is used comprising thermal imprint, DUV exposure, evaporation of the laser material, and sealing by thermal bonding. The excitation of two fluorescent marker model systems including labeled antibodies with light emitted by integrated lasers is demonstrated.

  11. Undulator radiation in a waveguide

    Energy Technology Data Exchange (ETDEWEB)

    Geloni, G.; Saldin, E.; Schneidmiller, E.; Yurkov, M.

    2007-03-15

    We propose an analytical approach to characterize undulator radiation near resonance, when the presence of the vacuum-pipe considerably affects radiation properties. This is the case of the far-infrared undulator beamline at the Free-electron LASer (FEL) in Hamburg (FLASH), that will be capable of delivering pulses in the TeraHertz (THz) range. This undulator will allow pump-probe experiments where THz pulses are naturally synchronized to the VUV pulse from the FEL, as well as the development of novel electron-beam diagnostics techniques. Since the THz radiation diffraction-size exceeds the vacuum-chamber dimensions, characterization of infrared radiation must be performed accounting for the presence of a waveguide.We developed a theory of undulator radiation in a waveguide based on paraxial and resonance approximation. We solved the field equation with a tensor Green's function technique, and extracted figure of merits describing in a simple way the influence of the vacuum-pipe on the radiation pulse as a function of the problem parameters. Our theory, that makes consistent use of dimensionless analysis, allows treatment and physical understanding of many asymptotes of the parameter space, together with their region of applicability. (orig.)

  12. Undulator radiation in a waveguide

    International Nuclear Information System (INIS)

    Geloni, G.; Saldin, E.; Schneidmiller, E.; Yurkov, M.

    2007-03-01

    We propose an analytical approach to characterize undulator radiation near resonance, when the presence of the vacuum-pipe considerably affects radiation properties. This is the case of the far-infrared undulator beamline at the Free-electron LASer (FEL) in Hamburg (FLASH), that will be capable of delivering pulses in the TeraHertz (THz) range. This undulator will allow pump-probe experiments where THz pulses are naturally synchronized to the VUV pulse from the FEL, as well as the development of novel electron-beam diagnostics techniques. Since the THz radiation diffraction-size exceeds the vacuum-chamber dimensions, characterization of infrared radiation must be performed accounting for the presence of a waveguide.We developed a theory of undulator radiation in a waveguide based on paraxial and resonance approximation. We solved the field equation with a tensor Green's function technique, and extracted figure of merits describing in a simple way the influence of the vacuum-pipe on the radiation pulse as a function of the problem parameters. Our theory, that makes consistent use of dimensionless analysis, allows treatment and physical understanding of many asymptotes of the parameter space, together with their region of applicability. (orig.)

  13. Novel Cavities in Vertical External Cavity Surface Emitting Lasers for Emission in Broad Spectral Region by Means of Nonlinear Frequency Conversion

    Science.gov (United States)

    Lukowski, Michal L.

    Optically pumped semiconductor vertical external cavity surface emitting lasers (VECSEL) were first demonstrated in the mid 1990's. Due to the unique design properties of extended cavity lasers VECSELs have been able to provide tunable, high-output powers while maintaining excellent beam quality. These features offer a wide range of possible applications in areas such as medicine, spectroscopy, defense, imaging, communications and entertainment. Nowadays, newly developed VECSELs, cover the spectral regions from red (600 nm) to around 5 microm. By taking the advantage of the open cavity design, the emission can be further expanded to UV or THz regions by the means of intracavity nonlinear frequency generation. The objective of this dissertation is to investigate and extend the capabilities of high-power VECSELs by utilizing novel nonlinear conversion techniques. Optically pumped VECSELs based on GaAs semiconductor heterostructures have been demonstrated to provide exceptionally high output powers covering the 900 to 1200 nm spectral region with diffraction limited beam quality. The free space cavity design allows for access to the high intracavity circulating powers where high efficiency nonlinear frequency conversions and wavelength tuning can be obtained. As an introduction, this dissertation consists of a brief history of the development of VECSELs as well as wafer design, chip fabrication and resonator cavity design for optimal frequency conversion. Specifically, the different types of laser cavities such as: linear cavity, V-shaped cavity and patented T-shaped cavity are described, since their optimization is crucial for transverse mode quality, stability, tunability and efficient frequency conversion. All types of nonlinear conversions such as second harmonic, sum frequency and difference frequency generation are discussed in extensive detail. The theoretical simulation and the development of the high-power, tunable blue and green VECSEL by the means of type I

  14. Enhancement of high-order harmonics in a plasma waveguide formed in clustered Ar gas.

    Science.gov (United States)

    Geng, Xiaotao; Zhong, Shiyang; Chen, Guanglong; Ling, Weijun; He, Xinkui; Wei, Zhiyi; Kim, Dong Eon

    2018-02-05

    Generation of high-order harmonics (HHs) is intensified by using a plasma waveguide created by a laser in a clustered gas jet. The formation of a plasma waveguide and the guiding of a laser beam are also demonstrated. Compared to the case without a waveguide, harmonics were strengthened up to nine times, and blue-shifted. Numerical simulation by solving the time-dependent Schrödinger equation in strong field approximation agreed well with experimental results. This result reveals that the strengthening is the result of improved phase matching and that the blue shift is a result of change in fundamental laser frequency due to self-phase modulation (SPM).

  15. Pulsed Nd:YAG laser deposition of indium tin oxide thin films in different gases and organic light emitting device applications

    International Nuclear Information System (INIS)

    Yong, T.Y.; Tou, T.Y.; Yow, H.K.; Safran, G.

    2008-01-01

    The microstructures, electrical and optical properties of indium-doped tin oxide (ITO) films, deposited on glass substrates in different background gases by a pulsed Nd:YAG laser, were characterized. The optimal pressure for obtaining the lowest resistivity in ITO thin film is inversely proportional to the molecular weight of the background gases, namely the argon (Ar), oxygen (O 2 ), nitrogen (N 2 ) and helium (He). While substrate heating to 250 deg. C decreased the ITO resistivity to -4 Ω cm, obtaining the optical transmittance of higher than 90% depended mainly on the background gas pressure for O 2 and Ar. Obtaining the lowest ITO resistivity, however, did not beget a high optical transmittance for ITO deposition in N 2 and He. Scanning electron microscope pictures show distinct differences in microstructures due to the background gas: nanostructures when using Ar and N 2 but polycrystalline for using O 2 and He. The ITO surface roughness varied with the deposition distance. The effects on the molecularly doped, single-layer organic light emitting device (OLED) operation and performance were also investigated. Only ITO thin films prepared in O 2 and Ar are suitable for the fabrication OLED with performance comparable to that fabricated on the commercially available, magnetron-sputtered ITO

  16. Continuous wave vertical cavity surface emitting lasers at 2.5 μm with InP-based type-II quantum wells

    International Nuclear Information System (INIS)

    Sprengel, S.; Andrejew, A.; Federer, F.; Veerabathran, G. K.; Boehm, G.; Amann, M.-C.

    2015-01-01

    A concept for electrically pumped vertical cavity surface emitting lasers (VCSEL) for emission wavelength beyond 2 μm is presented. This concept integrates type-II quantum wells into InP-based VCSELs with a buried tunnel junction as current aperture. The W-shaped quantum wells are based on the type-II band alignment between GaInAs and GaAsSb. The structure includes an epitaxial GaInAs/InP and an amorphous AlF 3 /ZnS distributed Bragg reflector as bottom and top (outcoupling) mirror, respectively. Continuous-wave operation up to 10 °C at a wavelength of 2.49 μm and a peak output power of 400 μW at −18 °C has been achieved. Single-mode emission with a side-mode suppression ratio of 30 dB for mesa diameters up to 14 μm is presented. The long emission wavelength and current tunability over a wavelength range of more than 5 nm combined with its single-mode operation makes this device ideally suited for spectroscopy applications

  17. Complex-enhanced chaotic signals with time-delay signature suppression based on vertical-cavity surface-emitting lasers subject to chaotic optical injection

    Science.gov (United States)

    Chen, Jianjun; Duan, Yingni; Zhong, Zhuqiang

    2018-03-01

    A chaotic system is constructed on the basis of vertical-cavity surface-emitting lasers (VCSELs), where a slave VCSEL subject to chaotic optical injection (COI) from a master VCSEL with the external feedback. The complex degree (CD) and time-delay signature (TDS) of chaotic signals generated by this chaotic system are investigated numerically via permutation entropy (PE) and self-correlation function (SF) methods, respectively. The results show that, compared with master VCSEL subject to optical feedback, complex-enhanced chaotic signals with TDS suppression can be achieved for S-VCSEL subject to COI. Meanwhile, the influences of several controllable parameters on the evolution maps of CD of chaotic signals are carefully considered. It is shown that the CD of chaotic signals for S-VCSEL is always higher than that for M-VCSEL due to the CIO effect. The TDS of chaotic signals can be significantly suppressed by choosing the reasonable parameters in this system. Furthermore, TDS suppression and high CD chaos can be obtained simultaneously in the specific parameter ranges. The results confirm that this chaotic system may effectively improve the security of a chaos-based communication scheme.

  18. An efficient approach to characterizing and calculating carrier loss due to heating and barrier height variation in vertical-cavity surface-emitting lasers

    International Nuclear Information System (INIS)

    Jian, Wu; Summers, H. D.

    2010-01-01

    It is important to determine quantitatively the internal carrier loss arising from heating and barrier height variation in a vertical-cavity surface-emitting quantum well laser (VCSEL). However, it is generally difficult to realize this goal using purely theoretical formulas due to difficulty in deriving the parameters relating to the quantum well structure. In this paper, we describe an efficient approach to characterizing and calculating the carrier loss due to the heating and the barrier height change in the VCSEL. In the method, the thermal carrier loss mechanism is combined with gain measurement and calculation. The carrier loss is re-characterized in a calculable form by constructing the threshold current and gain detuning-related loss current using the measured gain data and then substituting them for the quantum well-related parameters in the formula. The result can be expressed as a product of an exponential weight factor linked to the barrier height change and the difference between the threshold current and gain detuning-related loss current. The gain variation at cavity frequency due to thermal carrier loss and gain detuning processes is measured by using an AlInGaAs–AlGaAs VCSEL structure. This work provides a useful approach to analysing threshold and loss properties of the VCSEL, particularly, gain offset design for high temperature operation of VCSELs. (classical areas of phenomenology)

  19. Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

    International Nuclear Information System (INIS)

    Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Margalith, T.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

    2015-01-01

    We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (J th ) of ∼3.5 kA/cm 2 , compared to the ITO VCSEL J th of 8 kA/cm 2 . The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL

  20. Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact

    Energy Technology Data Exchange (ETDEWEB)

    Leonard, J. T., E-mail: jtleona01@gmail.com; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Margalith, T.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2015-08-31

    We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intracavity contact. The TJ VCSEL shows a threshold current density (J{sub th}) of ∼3.5 kA/cm{sup 2}, compared to the ITO VCSEL J{sub th} of 8 kA/cm{sup 2}. The differential efficiency of the TJ VCSEL is also observed to be significantly higher than that of the ITO VCSEL, reaching a peak power of ∼550 μW, compared to ∼80 μW for the ITO VCSEL. Both VCSELs display filamentary lasing in the current aperture, which we believe to be predominantly a result of local variations in contact resistance, which may induce local variations in refractive index and free carrier absorption. Beyond the analyses of the lasing characteristics, we discuss the molecular-beam epitaxy (MBE) regrowth of the TJ, as well as its unexpected performance based on band-diagram simulations. Furthermore, we investigate the intrinsic advantages of using a TJ intracavity contact in a VCSEL using a 1D mode profile analysis to approximate the threshold modal gain and general loss contributions in the TJ and ITO VCSEL.

  1. Harmonics generation of a terahertz wakefield free-electron laser from a dielectric loaded waveguide excited by a direct current electron beam.

    Science.gov (United States)

    Li, Weiwei; Lu, Yalin; He, Zhigang; Jia, Qika; Wang, Lin

    2016-06-01

    We propose to generate high-power terahertz (THz) radiation from a cylindrical dielectric loaded waveguide (DLW) excited by a direct-current electron beam with the harmonics generation method. The DLW supports a discrete set of modes that can be excited by an electron beam passing through the structure. The interaction of these modes with the co-propagating electron beam results in micro-bunching and the coherent enhancement of the wakefield radiation, which is dominated by the fundamental mode. By properly choosing the parameters of DLW and beam energy, the high order modes can be the harmonics of the fundamental one; thus, high frequency radiation corresponding to the high order modes will benefit from the dominating bunching process at the fundamental eigenfrequency and can also be coherently excited. With the proposed method, high power THz radiation can be obtained with an easily achievable electron beam and a large DLW structure.

  2. Moving Target Detection With Compact Laser Doppler Radar

    Science.gov (United States)

    Sepp, G.; Breining, A.; Eisfeld, W.; Knopp, R.; Lill, E.; Wagner, D.

    1989-12-01

    This paper describes an experimental integrated optronic system for detection and tracking of moving objects. The system is based on a CO2 waveguide laser Doppler ra-dar with homodyne receiver and galvanometer mirror beam scanner. A "hot spot" seeker consisting of a thermal imager with image processor transmits the coordinates of IR-emitting, i.e. potentially powered, objects to the laser radar scanner. The scanner addresses these "hot" locations operating in a large field-of-view (FOV) random ac-cess mode. Hot spots exhibiting a Doppler shifted laser signal are indicated in the thermal image by velocity-to-colour encoded markers. After switching to a small FOV scanning mode, the laser Doppler radar is used to track fast moving objects. Labora-tory and field experiments with moving objects including rotating discs, automobiles and missiles are described.

  3. Planar optical waveguide sensor of ammonia

    Science.gov (United States)

    Sarkisov, Sergey S.; Curley, Michael J.; Boykin, Courtney; Diggs, Darnell E.; Grote, James G.; Hopkins, Frank K.

    2004-12-01

    We describe a novel sensor of ammonia based on a planar optical waveguide made of a thin film of polymer polyimide doped with indicator dye bromocresol purple. The film of dye-doped polyimide demonstrated reversible increase of absorption with a peak near 600 nm in response to presence of ammonia in ambient air. Coupling of input and output optic fibers with the waveguide was done by means of coupling prisms or coupling grooves. The latter configuration has the advantage of low cost, less sensitivity to temperature variation, and the possibility of coupling from both sides of the waveguide. Special experimental setup was built to test the sensor. It included test gas chamber with sealed optic fiber feed-throughs, gas filling line, laser source, photodetector, and signal processing hardware and software. The sensor was capable of detecting 100 ppm of ammonia in air within 8 seconds. Further increase of sensitivity can be achieved by adding more dye dopant to the polymer, increase of the length of the waveguide, and suppression of noise. Overexposure of the sensor to more than 5000 ppm of ammonia led to the saturation of the polymer film and, as a result, significant decrease of sensitivity and increase of the response time. The sensor can be used as low cost component of a distributed optical network of chemical sensors for monitoring presence of hazardous industrial pollutants in air.

  4. Ring cavity for a Raman capillary waveguide amplifier

    Science.gov (United States)

    Kurnit, N.A.

    1981-01-27

    A regenerative ring amplifier and regenerative ring oscillator are described which function to feed back a portion of the Stokes signal to complete the ring cavity. The ring cavity configuration allows the CO/sub 2/ laser pump signal and Stokes signal to copropagate through the Raman capillary waveguide amplifier. A Raman capillary waveguide amplifier is also provided in the return leg of the ring cavity to increase gain without increasing the round trip time. Additionally, the ring cavity can be designed such that the amplified Stokes signal is synchronous with the mode-locked spikes of the incoming CO/sub 2/ laser pump signal.

  5. Ring cavity for a Raman capillary waveguide amplifir

    Science.gov (United States)

    Kurnit, N.A.

    1981-01-27

    A regenerative ring amplifier and regenerative ring oscillator are described which function to feed back a portion of the Stokes signal to complete the ring cavity. The ring cavity configuration allows the CO/sub 2/ laser pump signal and Stokes signal to copropagate through the Raman capillary waveguide amplifier. A Raman capillary waveguide amplifier is also provided in the return leg of the ring cavity to increase gain without increasing the round trip time. Additionally, the ring cavity can be designed such that the amplified Stokes signal is synchronous with the mode-locked spikes of the incoming CO/sub 2/ laser pump signal.

  6. 3d-4p x-ray spectrum emitted by highly ionized uranium from a laser-produced plasma in the 3.8<λ<4.4-A wavelength range

    International Nuclear Information System (INIS)

    Mandelbaum, P.; Seely, J.F.; Kania, D.R.; Kauffman, R.L.

    1992-01-01

    This work extends a previous analysis of the x-ray spectrum of a laser-produced uranium plasma [P. Mandelbaum et al., Phys. Rev. A 44, 5752 (1991)] to the longer-wavelength range (3.8 +65 ) through As-like (U +59 ) isoelectronic sequences are identified in the spectrum, in good agreement with the previous analysis of the spectrum emitted at shorter wavelengths

  7. Remote detection of single emitters via optical waveguides

    Science.gov (United States)

    Then, Patrick; Razinskas, Gary; Feichtner, Thorsten; Haas, Philippe; Wild, Andreas; Bellini, Nicola; Osellame, Roberto; Cerullo, Giulio; Hecht, Bert

    2014-05-01

    The integration of lab-on-a-chip technologies with single-molecule detection techniques may enable new applications in analytical chemistry, biotechnology, and medicine. We describe a method based on the reciprocity theorem of electromagnetic theory to determine and optimize the detection efficiency of photons emitted by single quantum emitters through truncated dielectric waveguides of arbitrary shape positioned in their proximity. We demonstrate experimentally that detection of single quantum emitters via such waveguides is possible, confirming the predicted behavior of the detection efficiency. Our findings blaze the trail towards efficient lensless single-emitter detection compatible with large-scale optofluidic integration.

  8. Optical waveguides in lithium niobate: Recent developments and applications

    Energy Technology Data Exchange (ETDEWEB)

    Bazzan, Marco, E-mail: marco.bazzan@unipd.it; Sada, Cinzia, E-mail: cinzia.sada@unipd.it [Dipartimento di Fisica e Astronomia “G. Galilei,” Università di Padova, Via Marzolo 8, 35131 Padova (Italy)

    2015-12-15

    The state of the art of optical waveguide fabrication in lithium niobate is reviewed, with particular emphasis on new technologies and recent applications. The attention is mainly devoted to recently developed fabrication methods, such as femtosecond laser writing, ion implantation, and smart cut waveguides as well as to the realization of waveguides with tailored functionalities, such as photorefractive or domain engineered structures. More exotic systems, such as reconfigurable and photorefractive soliton waveguides, are also considered. Classical techniques, such as Ti in-diffusion and proton exchange, are cited and briefly reviewed as a reference standpoint to highlight the recent developments. In all cases, the application-oriented point of view is preferred, in order to provide the reader with an up-to date panorama of the vast possibilities offered by lithium niobate to integrated photonics.

  9. Investigations of the polarization behavior of quantum cascade lasers by Stokes parameters.

    Science.gov (United States)

    Janassek, Patrick; Hartmann, Sébastien; Molitor, Andreas; Michel, Florian; Elsäßer, Wolfgang

    2016-01-15

    We experimentally investigate the full polarization behavior of mid-infrared emitting quantum cascade lasers (QCLs) in terms of measuring the complete Stokes parameters, instead of only projecting them on a linear polarization basis. We demonstrate that besides the pre-dominant linear TM polarization of the emitted light as governed by the selection rules of the intersubband transition, small non-TM contributions, e.g., circularly polarized light, are present reflecting the birefringent behavior of the semiconductor quantum well waveguide. Surprisingly unique is the persistence of these polarization properties well below laser threshold. These investigations give further insight into understanding, manipulating, and exploiting the polarization properties of QCLs, both from a laser point of view and with respect toward applications.

  10. Gap Surface Plasmon Waveguide Analysis

    DEFF Research Database (Denmark)

    Nielsen, Michael Grøndahl; Bozhevolnyi, Sergey I.

    2014-01-01

    Plasmonic waveguides supporting gap surface plasmons (GSPs) localized in a dielectric spacer between metal films are investigated numerically and the waveguiding properties at telecommunication wavelengths are presented. Especially, we emphasize that the mode confinement can advantageously...

  11. Silicon microphotonic waveguides

    International Nuclear Information System (INIS)

    Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

    2004-01-01

    Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

  12. Evanescent-wave coupled right angled buried waveguide: Applications in carbon nanotube mode-locking

    International Nuclear Information System (INIS)

    Mary, R.; Thomson, R. R.; Kar, A. K.; Brown, G.; Beecher, S. J.; Popa, D.; Sun, Z.; Torrisi, F.; Hasan, T.; Milana, S.; Bonaccorso, F.; Ferrari, A. C.

    2013-01-01

    We present an evanescent-field device based on a right-angled waveguide. This consists of orthogonal waveguides, with their points of intersection lying along an angled facet of the chip. Light guided along one waveguide is incident at the angled dielectric-air facet at an angle exceeding the critical angle, so that the totally internally reflected light is coupled into the second waveguide. By depositing a nanotube film on the angled surface, the chip is then used to mode-lock an Erbium doped fiber ring laser with a repetition rate of 26 MHz, and pulse duration of 800 fs

  13. Mesoscale cavities in hollow-core waveguides for quantum optics with atomic ensembles

    Directory of Open Access Journals (Sweden)

    Haapamaki C.M.

    2016-08-01

    Full Text Available Single-mode hollow-core waveguides loaded with atomic ensembles offer an excellent platform for light–matter interactions and nonlinear optics at low photon levels. We review and discuss possible approaches for incorporating mirrors, cavities, and Bragg gratings into these waveguides without obstructing their hollow cores. With these additional features controlling the light propagation in the hollow-core waveguides, one could potentially achieve optical nonlinearities controllable by single photons in systems with small footprints that can be integrated on a chip. We propose possible applications such as single-photon transistors and superradiant lasers that could be implemented in these enhanced hollow-core waveguides.

  14. Nanoporous polymer liquid core waveguides

    DEFF Research Database (Denmark)

    Gopalakrishnan, Nimi; Christiansen, Mads Brøkner; Ndoni, Sokol

    2010-01-01

    We demonstrate liquid core waveguides defined by UV to enable selective water infiltration in nanoporous polymers, creating an effective refractive index shift Δn=0.13. The mode confinement and propagation loss in these waveguides are presented.......We demonstrate liquid core waveguides defined by UV to enable selective water infiltration in nanoporous polymers, creating an effective refractive index shift Δn=0.13. The mode confinement and propagation loss in these waveguides are presented....

  15. Surface plasmon quantum cascade lasers as terahertz local oscillators.

    Science.gov (United States)

    Hajenius, M; Khosropanah, P; Hovenier, J N; Gao, J R; Klapwijk, T M; Barbieri, S; Dhillon, S; Filloux, P; Sirtori, C; Ritchie, D A; Beere, H E

    2008-02-15

    We characterize a heterodyne receiver based on a surface-plasmon waveguide quantum cascade laser (QCL) emitting at 2.84 THz as a local oscillator, and an NbN hot electron bolometer as a mixer. We find that the envelope of the far-field pattern of the QCL is diffraction-limited and superimposed onto interference fringes, which are similar to those found in narrow double-metal waveguide QCLs. Compared to the latter, a more directional beam allows for better coupling of the radiation power to the mixer. We obtain a receiver noise temperature of 1050 K when the mixer is at 2 K, which, to our knowledge, is the highest sensitivity reported at frequencies beyond 2.5 THz.

  16. A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe

    International Nuclear Information System (INIS)

    Chen Ping; Zhao De-Gang; Feng Mei-Xin; Jiang De-Sheng; Liu Zong-Shun; Yang Hui; Zhang Li-Qun; Li De-Yao; Liu Jian-Ping; Wang Hui; Zhu Jian-Jun; Zhang Shu-Ming; Zhang Bao-Shun

    2013-01-01

    An array of high power InGaN/GaN multi-quantum-well laser diodes with a broad waveguide is fabricated. The laser diode structure is grown on a GaN substrate by metal-organic chemical vapor deposition. The laser diode array consists of five emitter stripes which share common electrodes on one laser chip. The electrical and optical characteristics of the laser diode array are investigated under the pulse current injection with 10kHz frequency and 100 ns pulse width. The laser diode array emits at the wavelength of 409 nm, which is located in the blue-violet region, and the threshold current is 2.9 A. The maximum output light peak power is measured to be 7.5 W at the wavelength of 411.8 nm under the current of 25 A

  17. Waveguiding properties of individual electrospun polymer nanofibers

    Science.gov (United States)

    Ishii, Yuya; Kaminose, Ryohei; Fukuda, Mitsuo

    2013-09-01

    Optical circuits are needed to achieve high-speed, high-capacity information processing. An optical waveguide is an essential element in optical circuits. Electrospun polymer fibers have diameters in the nanometer range and high aspect ratios, so they are prime candidates for small waveguides. In this work, we fabricate uniform electrospun polymer nanofibers and characterize their optical waveguiding properties. Poly(methyl methacrylate) (PMMA) solutions of different concentration that contain a small amount of Nile Blue A perchlorate (NBA) are electrospun. Uniform PMMA/NBA nanofibers are obtained from the 10 wt% solution. The fibers are covered with transparent cladding and their ends cut vertically. A laser beam with a wavelength of 533 nm is irradiated onto the fiber from the direction vertical to the fiber axis so that it scans along the fiber. Photoluminescence (PL) at the end face of individual fibers is then measured. The PL intensity decreases with increasing distance (d) between the end face of a fiber and irradiating point of the laser beam as ~exp(-αd) with a loss coefficient (α). Measurements of five individual fibers reveal α is in the range of 17-75 cm-1.

  18. Integrated Broadband Quantum Cascade Laser

    Science.gov (United States)

    Mansour, Kamjou (Inventor); Soibel, Alexander (Inventor)

    2016-01-01

    A broadband, integrated quantum cascade laser is disclosed, comprising ridge waveguide quantum cascade lasers formed by applying standard semiconductor process techniques to a monolithic structure of alternating layers of claddings and active region layers. The resulting ridge waveguide quantum cascade lasers may be individually controlled by independent voltage potentials, resulting in control of the overall spectrum of the integrated quantum cascade laser source. Other embodiments are described and claimed.

  19. Quantum dots for lasers, amplifiers and computing

    International Nuclear Information System (INIS)

    Bimberg, Dieter

    2005-01-01

    For InAs-GaAs based quantum dot lasers emitting at 1300 nm, digital modulation showing an open eye pattern up to 12 Gb s -1 at room temperature is demonstrated, at 10 Gb s -1 the bit error rate is below 10 -12 at -2 dB m receiver power. Cut-off frequencies up to 20 GHz are realised for lasers emitting at 1.1 μm. Passively mode-locked QD lasers generate optical pulses with repetition frequencies between 5 and 50 GHz, with a minimum Fourier limited pulse length of 3 ps. The uncorrelated jitter is below 1 ps. We use here deeply etched narrow ridge waveguide structures which show excellent performance similar to shallow mesa structures, but a circular far field at a ridge width of 1 μm, improving coupling efficiency into fibres. No beam filamentation of the fundamental mode, low a-factors and strongly reduced sensitivity to optical feedback are observed. QD lasers are thus superior to QW lasers for any system or network. Quantum dot semiconductor optical amplifier (QD SOAs) demonstrate gain recovery times of 120-140 fs, 4-7 times faster than bulk/QW SOAs, and a net gain larger than 0.4 dB/(mm*QD-layer) providing us with novel types of booster amplifiers and Mach-Zehnder interferometers. These breakthroughs became possible due to systematic development of self-organized growth technologies

  20. Direct visualization of the in-plane leakage of high-order transverse modes in vertical-cavity surface-emitting lasers mediated by oxide-aperture engineering

    Science.gov (United States)

    Ledentsov, N.; Shchukin, V. A.; Kropp, J.-R.; Burger, S.; Schmidt, F.; Ledentsov, N. N.

    2016-03-01

    Oxide-confined apertures in vertical cavity surface emitting laser (VCSEL) can be engineered such that they promote leakage of the transverse optical modes from the non- oxidized core region to the selectively oxidized periphery of the device. The reason of the leakage is that the VCSEL modes in the core can be coupled to tilted modes in the periphery if the orthogonality between the core mode and the modes at the periphery is broken by the oxidation-induced optical field redistribution. Three-dimensional modeling of a practical VCSEL design reveals i) significantly stronger leakage losses for high-order transverse modes than that of the fundamental one as high-order modes have a higher field intensity close to the oxide layers and ii) narrow peaks in the far-field profile generated by the leaky component of the optical modes. Experimental 850-nm GaAlAs leaky VCSELs produced in the modeled design demonstrate i) single-mode lasing with the aperture diameters up to 5μm with side mode suppression ratio >20dB at the current density of 10kA/cm2; and ii) narrow peaks tilted at 37 degrees with respect to the vertical axis in excellent agreement with the modeling data and confirming the leaky nature of the modes and the proposed mechanism of mode selection. The results indicate that in- plane coupling of VCSELs, VCSELs and p-i-n photodiodes, VCSEL and delay lines is possible allowing novel photonic integrated circuits. We show that the approach enables design of oxide apertures, air-gap apertures, devices created by impurity-induced intermixing or any combinations of such designs through quantitative evaluation of the leaky emission.

  1. Effects of intratracheally instilled laser printer-emitted engineered nanoparticles in a mouse model: A case study of toxicological implications from nanomaterials released during consumer use.

    Science.gov (United States)

    Pirela, Sandra V; Lu, Xiaoyan; Miousse, Isabelle; Sisler, Jennifer D; Qian, Yong; Guo, Nancy; Koturbash, Igor; Castranova, Vincent; Thomas, Treye; Godleski, John; Demokritou, Philip

    2016-01-01

    Incorporation of engineered nanomaterials (ENMs) into toners used in laser printers has led to countless quality and performance improvements. However, the release of ENMs during printing (consumer use) has raised concerns about their potential adverse health effects. The aim of this study was to use "real world" printer-emitted particles (PEPs), rather than raw toner powder, and assess the pulmonary responses following exposure by intratracheal instillation. Nine-week old male Balb/c mice were exposed to various doses of PEPs (0.5, 2.5 and 5 mg/kg body weight) by intratracheal instillation. These exposure doses are comparable to real world human inhalation exposures ranging from 13.7 to 141.9 h of printing. Toxicological parameters reflecting distinct mechanisms of action were evaluated, including lung membrane integrity, inflammation and regulation of DNA methylation patterns. Results from this in vivo toxicological analysis showed that while intratracheal instillation of PEPs caused no changes in the lung membrane integrity, there was a pulmonary immune response, indicated by an elevation in neutrophil and macrophage percentage over the vehicle control and low dose PEPs groups. Additionally, exposure to PEPs upregulated expression of the Ccl5 ( Rantes ), Nos1 and Ucp2 genes in the murine lung tissue and modified components of the DNA methylation machinery ( Dnmt3a ) and expression of transposable element (TE) LINE-1 compared to the control group. These genes are involved in both the repair process from oxidative damage and the initiation of immune responses to foreign pathogens. The results are in agreement with findings from previous in vitro cellular studies and suggest that PEPs may cause immune responses in addition to modifications in gene expression in the murine lung at doses that can be comparable to real world exposure scenarios, thereby raising concerns of deleterious health effects.

  2. In vivo epigenetic effects induced by engineered nanomaterials: A case study of copper oxide and laser printer-emitted engineered nanoparticles.

    Science.gov (United States)

    Lu, Xiaoyan; Miousse, Isabelle R; Pirela, Sandra V; Moore, Jodene K; Melnyk, Stepan; Koturbash, Igor; Demokritou, Philip

    2016-01-01

    Evidence continues to grow on potential environmental health hazards associated with engineered nanomaterials (ENMs). While the geno- and cytotoxic effects of ENMs have been investigated, their potential to target the epigenome remains largely unknown. The aim of this study is two-fold: 1) determining whether or not industry relevant ENMs can affect the epigenome in vivo and 2) validating a recently developed in vitro epigenetic screening platform for inhaled ENMs. Laser printer-emitted engineered nanoparticles (PEPs) released from nano-enabled toners during consumer use and copper oxide (CuO) were chosen since these particles induced significant epigenetic changes in a recent in vitro companion study. In this study, the epigenetic alterations in lung tissue, alveolar macrophages and peripheral blood from intratracheally instilled mice were evaluated. The methylation of global DNA and transposable elements (TEs), the expression of the DNA methylation machinery and TEs, in addition to general toxicological effects in the lung were assessed. CuO exhibited higher cell-damaging potential to the lung, while PEPs showed a greater ability to target the epigenome. Alterations in the methylation status of global DNA and TEs, and expression of TEs and DNA machinery in mouse lung were observed after exposure to CuO and PEPs. Additionally, epigenetic changes were detected in the peripheral blood after PEPs exposure. Altogether, CuO and PEPs can induce epigenetic alterations in a mouse experimental model, which in turn confirms that the recently developed in vitro epigenetic platform using macrophage and epithelial cell lines can be successfully utilized in the epigenetic screening of ENMs.

  3. Optical waveguides in LiTaO3 crystals fabricated by swift C5+ ion irradiation

    International Nuclear Information System (INIS)

    Liu, Guiyuan; He, Ruiyun; Akhmadaliev, Shavkat; Vázquez de Aldana, Javier R.; Zhou, Shengqiang; Chen, Feng

    2014-01-01

    We report on the optical waveguides, in both planar and ridge configurations, fabricated in LiTaO 3 crystal by using carbon (C 5+ ) ions irradiation at energy of 15 MeV. The planar waveguide was produced by direct irradiation of swift C 5+ ions, whilst the ridge waveguides were manufactured by using femtosecond laser ablation of the planar layer. The reconstructed refractive index profile of the planar waveguide has showed a barrier-shaped distribution, and the near-field waveguide mode intensity distribution was in good agreement with the calculated modal profile. After thermal annealing at 260 °C in air, the propagation losses of both the planar and ridge waveguides were reduced to 10 dB/cm

  4. Apodized coupled resonator waveguides.

    Science.gov (United States)

    Capmany, J; Muñoz, P; Domenech, J D; Muriel, M A

    2007-08-06

    In this paper we propose analyse the apodisation or windowing of the coupling coefficients in the unit cells of coupled resonator waveguide devices (CROWs) as a means to reduce the level of secondary sidelobes in the bandpass characteristic of their transfer functions. This technique is regularly employed in the design of digital filters and has been applied as well in the design of other photonic devices such as corrugated waveguide filters and fiber Bragg gratings. The apodisation of both Type-I and Type-II structures is discussed for several windowing functions.

  5. Progress in planar optical waveguides

    CERN Document Server

    Wang, Xianping; Cao, Zhuangqi

    2016-01-01

    This book provides a comprehensive description of various slab waveguide structures ranged from graded-index waveguide to symmetrical metal-cladding waveguide. In this book, the transfer Matrix method is developed and applied to analyze the simplest case and the complex generalizations. A novel symmetrical metal-cladding waveguide structure is proposed and systematically investigated for several issues of interest, such as biochemical sensing, Goos-Hänchen shift and the slow light effect, etc. Besides, this book summarizes the authors’ research works on waveguides over the last decade. The readers who are familiar with basic optics theory may find this book easy to read and rather inspiring.

  6. Enhanced Gain in Slow-Light Photonic Crystal Waveguides with Embedded Quantum Dots

    DEFF Research Database (Denmark)

    Ek, Sara; Hansen, Per Lunnemann; Semenova, Elizaveta

    2011-01-01

    We experimentally demonstrate enhanced gain in the slow-light regime of quantum dot photonic crystal waveguide slabs. These are promising results for future compact devices for terabit/s communication, such as compact optical amplifiers and mode-locked lasers.......We experimentally demonstrate enhanced gain in the slow-light regime of quantum dot photonic crystal waveguide slabs. These are promising results for future compact devices for terabit/s communication, such as compact optical amplifiers and mode-locked lasers....

  7. Effect of optical waveguiding mechanism on the lasing action of chirped InAs/AlGaInAs/InP quantum dash lasers

    KAUST Repository

    Khan, Mohammed Zahed Mustafa; Ng, Tien Khee; Lee, C.-S.; Bhattacharya, P.; Ooi, Boon S.

    2013-01-01

    We report on the atypical emission dynamics of InAs/AlGaInAs/InP quantum dash (Qdash) lasers employing varying AlGaInAs barrier thickness (multilayer-chirped structure). The analysis is carried out via fabry-perot (FP) ridge (RW) and stripe

  8. Elaboration by epitaxy in liquid phase and monocrystalline layers of doped Yag. Realisation of wave guides lasers neodymium and ytterbium at low thresholds

    International Nuclear Information System (INIS)

    Pelenc, D.

    1993-10-01

    This thesis reports on the prototype development of a new laser waveguide fabrication technique, Liquid Phase Epitaxy, as part of the research on diode-pumped compact laser devices. This technique has been applied to the growth of single crystal thin layers of neodymium and ytterbium doped YAG on pure YAG substrates. In order to obtain good quality waveguides, we have defined the growth conditions, and demonstrated the advantage of the growth of an undoped YAG cladding layer. Two extra dopings have been studied: gallium, in order to control the refractive index of the layer, and lutetium, in order to control their lattice mismatch. The determination of the segregation coefficient of these four dopants has required the development of a model that takes into account the evolution of the melt with time. We have measured the refractive index increase for each dopant and proposed a mechanism that explains this increase. The spectroscopic characterisation of the layers has shown that the neodymium and ytterbium ions have the same properties as in the bulk material of the same composition. The laser characterisation has shown very low propagation losses (around 0.1 dB/cm), comparable to those of bulk. For the neodymium laser transition at 1064 nm, we have demonstrated the laser effect for an absorbed power threshold of 700μW and measured a slope efficiency of 40% for a threshold of 14 mW in diode pumping. For quasi 3 level transitions, a significant reduction in threshold with respect to unguided lasers has been obtained: at 946 nm in a neodymium doped waveguide, at 1029 nm in an ytterbium doped waveguide, with a 1W diode bar pump. A slope efficiency of 80% has also been measured in an ytterbium doped waveguided emitting at 1048nm

  9. Spectroelectrochemical sensing: planar waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Ross, Susan E.; Shi Yining; Seliskar, Carl J.; Heineman, William R

    2003-09-30

    The spectroelectrochemical sensor combines in a single device electrochemistry, spectroscopy, and selective partitioning into a film, giving improved selectivity for applications that involve complex samples. Sensing is based on the change in optical signal that accompanies electrochemical modulation of analyte that has partitioned into the film. Two classes of optical quality chemically-selective films based on two different host materials, namely, sol-gel processed silica and cross-linked poly(vinyl alcohol) have been developed. Films are typically 400-700 nm thick. Three types of sensor platforms are discussed: a multiple internal reflection (MIR) optic consisting of a bilayer of an indium tin oxide (ITO) optically transparent electrode deposited on a 1-mm thick glass substrate, a planar waveguide in which a potassium ion-exchanged BK7 glass waveguide (5-9 {mu}m thick) was over-coated with a thin film of ITO, and a planar waveguide in which a potassium ion-exchanged BK7 glass waveguide channel was formed and a pair of electrodes deposited along side the channel. These sensors were evaluated with ferrocyanide and a selective film of PDMDAAC-SiO{sub 2}, where PDMDAAC=poly(dimethyl diallylammonium chloride)

  10. Nanoscale waveguiding methods

    Directory of Open Access Journals (Sweden)

    Wang Chia-Jean

    2007-01-01

    Full Text Available AbstractWhile 32 nm lithography technology is on the horizon for integrated circuit (IC fabrication, matching the pace for miniaturization with optics has been hampered by the diffraction limit. However, development of nanoscale components and guiding methods is burgeoning through advances in fabrication techniques and materials processing. As waveguiding presents the fundamental issue and cornerstone for ultra-high density photonic ICs, we examine the current state of methods in the field. Namely, plasmonic, metal slot and negative dielectric based waveguides as well as a few sub-micrometer techniques such as nanoribbons, high-index contrast and photonic crystals waveguides are investigated in terms of construction, transmission, and limitations. Furthermore, we discuss in detail quantum dot (QD arrays as a gain-enabled and flexible means to transmit energy through straight paths and sharp bends. Modeling, fabrication and test results are provided and show that the QD waveguide may be effective as an alternate means to transfer light on sub-diffraction dimensions.

  11. Spectroelectrochemical sensing: planar waveguides

    International Nuclear Information System (INIS)

    Ross, Susan E.; Shi Yining; Seliskar, Carl J.; Heineman, William R.

    2003-01-01

    The spectroelectrochemical sensor combines in a single device electrochemistry, spectroscopy, and selective partitioning into a film, giving improved selectivity for applications that involve complex samples. Sensing is based on the change in optical signal that accompanies electrochemical modulation of analyte that has partitioned into the film. Two classes of optical quality chemically-selective films based on two different host materials, namely, sol-gel processed silica and cross-linked poly(vinyl alcohol) have been developed. Films are typically 400-700 nm thick. Three types of sensor platforms are discussed: a multiple internal reflection (MIR) optic consisting of a bilayer of an indium tin oxide (ITO) optically transparent electrode deposited on a 1-mm thick glass substrate, a planar waveguide in which a potassium ion-exchanged BK7 glass waveguide (5-9 μm thick) was over-coated with a thin film of ITO, and a planar waveguide in which a potassium ion-exchanged BK7 glass waveguide channel was formed and a pair of electrodes deposited along side the channel. These sensors were evaluated with ferrocyanide and a selective film of PDMDAAC-SiO 2 , where PDMDAAC=poly(dimethyl diallylammonium chloride)

  12. Non-invasive terahertz field imaging inside parallel plate waveguides

    DEFF Research Database (Denmark)

    Iwaszczuk, Krzysztof; Andryieuski, Andrei; Lavrinenko, Andrei

    2011-01-01

    We present a non-invasive broadband air photonic method of imaging of the electric field of THz pulses propagating inside a tapered parallel plate waveguide. The method is based on field-enhanced second harmonic generation of the fundamental laser beam in an external electric field. We apply...

  13. A green-color portable waveguide eyewear display system

    Science.gov (United States)

    Xia, Lingbo; Xu, Ke; Wu, Zhengming; Hu, Yingtian; Li, Zhenzhen; Wang, Yongtian; Liu, Juan

    2013-08-01

    Waveguide display systems are widely used in various display fields, especially in head mounted display. Comparing with the traditional head mounted display system, this device dramatically reduce the size and mass. However, there are still several fatal problems such as high scatting, the cumbersome design and chromatic aberration that should be solved. We designed and fabricated a monochromatic portable eyewear display system consist of a comfortable eyewear device and waveguide system with two holographic gratings located on the substrate symmetrically. We record the gratings on the photopolymer medium with high efficiency and wavelength sensitivity. The light emitting from the micro-display is diffracted by the grating and trapped in the glass substrate by total internal reflection. The relationship between the diffraction efficiency and exposure value is studied and analyzed, and we fabricated the gratings with appropriate diffraction efficiency in a optimization condition. To avoid the disturbance of the stray light, we optimize the waveguide system numerically and perform the optical experiments. With this system, people can both see through the waveguide to obtain the information outside and catch the information from the micro display. After considering the human body engineering and industrial production, we design the structure in a compact and portable way. It has the advantage of small-type configuration and economic acceptable. It is believe that this kind of planar waveguide system is a potentially replaceable choice for the portable devices in future mobile communications.

  14. An iterative model for the steady state current distribution in oxide-confined vertical-cavity surface-emitting lasers (VCSELs)

    Science.gov (United States)

    Chuang, Hsueh-Hua

    The purpose of this dissertation is to develop an iterative model for the analysis of the current distribution in vertical-cavity surface-emitting lasers (VCSELs) using a circuit network modeling approach. This iterative model divides the VCSEL structure into numerous annular elements and uses a circuit network consisting of resistors and diodes. The measured sheet resistance of the p-distributed Bragg reflector (DBR), the measured sheet resistance of the layers under the oxide layer, and two empirical adjustable parameters are used as inputs to the iterative model to determine the resistance of each resistor. The two empirical values are related to the anisotropy of the resistivity of the p-DBR structure. The spontaneous current, stimulated current, and surface recombination current are accounted for by the diodes. The lateral carrier transport in the quantum well region is analyzed using drift and diffusion currents. The optical gain is calculated as a function of wavelength and carrier density from fundamental principles. The predicted threshold current densities for these VCSELs match the experimentally measured current densities over the wavelength range of 0.83 mum to 0.86 mum with an error of less than 5%. This model includes the effects of the resistance of the p-DBR mirrors, the oxide current-confining layer and spatial hole burning. Our model shows that higher sheet resistance under the oxide layer reduces the threshold current, but also reduces the current range over which single transverse mode operation occurs. The spatial hole burning profile depends on the lateral drift and diffusion of carriers in the quantum wells but is dominated by the voltage drop across the p-DBR region. To my knowledge, for the first time, the drift current and the diffusion current are treated separately. Previous work uses an ambipolar approach, which underestimates the total charge transferred in the quantum well region, especially under the oxide region. However, the total

  15. Optical emission from a high-refractive-index waveguide excited by a traveling electron beam

    International Nuclear Information System (INIS)

    Kuwamura, Yuji; Yamada, Minoru; Okamoto, Ryuichi; Kanai, Takeshi; Fares, Hesham

    2008-01-01

    An optical emission scheme was demonstrated, in which a high-refractive-index waveguide is excited by a traveling electron beam in a vacuum environment. The waveguide was made of Si-SiO 2 layers. The velocity of light propagating in the waveguide was slowed down to 1/3 of that in free space due to the high refractive index of Si. The light penetrated partly into the vacuum in the form of a surface wave. The electron beam was emitted from an electron gun and propagated along the surface of the waveguide. When the velocity of the electron coincided with that of the light, optical emission was observed. This emission is a type of Cherenkov radiation and is not conventional cathode luminescence from the waveguide materials because Si and SiO 2 are transparent to light at the emitted wavelength. This type of emission was observed in an optical wavelength range from 1.2 to 1.6 μm with an electron acceleration voltage of 32-42 kV. The characteristics of the emitted light, such as the polarization direction and the relation between the acceleration voltage of the electron beam and the optical wavelength, coincided well with the theoretical results. The coherent length of an electron wave in the vacuum was confirmed to be equal to the electron spacing, as found by measuring the spectral profile of the emitted light

  16. Hybrid vertical cavity laser

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2010-01-01

    A new hybrid vertical cavity laser structure for silicon photonics is suggested and numerically investigated. It incorporates a silicon subwavelength grating as a mirror and a lateral output coupler to a silicon ridge waveguide.......A new hybrid vertical cavity laser structure for silicon photonics is suggested and numerically investigated. It incorporates a silicon subwavelength grating as a mirror and a lateral output coupler to a silicon ridge waveguide....

  17. High-power Al-free active region (λ= 852nm) DFB laser diodes for atomic clocks and interferometry applications

    Science.gov (United States)

    Ligeret, V.; Vermersch, F.-J.; Bansropun, S.; Lecomte, M.; Calligaro, M.; Parillaud, O.; Krakowski, M.

    2017-11-01

    Atomic clocks will be used in the future European positioning system Galileo. Among them, the optically pumped clocks provide a better alternative with comparable accuracy for a more compact system. For these systems, diode lasers emitting at 852nm are strategic components. The laser in a conventional bench for atomic clocks presents disadvantages for spatial applications. A better approach would be to realise a system based on a distributed-feedback laser (DFB). We have developed the technological foundations of such lasers operating at 852nm. These include an Al free active region, a single spatial mode ridge waveguide and a DFB structure. The device is a separate confinement heterostructure with a GaInP large optical cavity and a single compressive strained GaInAsP quantum well. The broad area laser diodes are characterised by low internal losses (value of less than 2MHz.

  18. Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Khabibullin, R. A., E-mail: khabibullin@isvch.ru; Shchavruk, N. V.; Pavlov, A. Yu.; Ponomarev, D. S.; Tomosh, K. N.; Galiev, R. R.; Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation); Zhukov, A. E.; Cirlin, G. E.; Zubov, F. I.; Alferov, Zh. I. [Russian Academy of Sciences, Saint Petersburg Academic University—Nanotechnology Research and Education Center (Russian Federation)

    2016-10-15

    The Postgrowth processing of GaAs/AlGaAs multilayer heterostructures for terahertz quantumcascade lasers (QCLs) are studied. This procedure includes the thermocompression bonding of In–Au multilayer heterostructures with a doped n{sup +}-GaAs substrate, mechanical grinding, and selective wet etching of the substrate, and dry etching of QCL ridge mesastripes through a Ti/Au metallization mask 50 and 100 μm wide. Reactive-ion-etching modes with an inductively coupled plasma source in a BCl{sub 3}/Ar gas mixture are selected to obtain vertical walls of the QCL ridge mesastripes with minimum Ti/Au mask sputtering.

  19. Waveguide-based optofluidics

    DEFF Research Database (Denmark)

    Karnutsch, Christian; Tomljenovic-Hanic, Snjezana; Monat, Christelle

    2010-01-01

    blocks in many applications, from microlasers and biomedical sensor systems to optical switches and integrated circuits. In this paper, we show that PhC microcavities can be formed by infusing a liquid into a selected section of a uniform PhC waveguide and that the optical properties of these cavities...... and highlight the benefits of an optofluidic approach, focusing on optofluidic cavities created in silicon photonic crystal (PhC) waveguide platforms. These cavities can be spatially and spectrally reconfigured, thus allowing a dynamic control of their optical characteristics. PhC cavities are major building...... can be tuned and adapted. By taking advantage of the negative thermo-optic coefficient of liquids, we describe a method which renders PhC cavities insensitive to temperature changes in the environment. This is only one example where the fluid-control of optical elements results in a functionality...

  20. Analysis of the X-ray spectra emitted by laser-produced plasma of highly ionized lanthanum and praseodymium in the 8. 4 to 12. 0 A wavelength range

    Energy Technology Data Exchange (ETDEWEB)

    Zigler, A [Racah Inst. of Physics, Hebrew Univ., Jerusalem (Israel); Mandelbaum, P [Racah Inst. of Physics, Hebrew Univ., Jerusalem (Israel); Schwob, J L [Racah Inst. of Physics, Hebrew Univ., Jerusalem (Israel); Mitnik, D [Racah Inst. of Physics, Hebrew Univ., Jerusalem (Israel)

    1994-06-01

    A detailed analysis of the X-ray spectra emitted by laser produced plasma of lanthanum (8.5-12.5 A) and praseodymium (8.4-11.3 A) is given, using ab-initio calculations with the HULLAC relativistic code. Resonance 3d-nf (n 4, 5, 6) and 3p-4s, 4d transitions of the La XXX and Pr XXXII Ni I-like ions and neighbouring ionization states (La XXVIII to La XXXVI, Pr XXX to Pr XXXVI) have been identified. (orig.).

  1. Phonon Routing in Integrated Optomechanical Cavity-waveguide Systems

    Science.gov (United States)

    2015-08-20

    cavity (bottom beam of Fig. 1b), allowing for evanescent cou- pling of laser light into and out of the cavity. A single optical fiber taper is used to...couple light into the on- chip coupling waveguide, and a photonic crystal mirror is etched in to the end of the optical coupling waveguide so that light...coupled into the nanobeam cavity can be recollected by the optical fiber taper as per Ref. [36]. Figure 1c shows the band structure of the phonon

  2. Miniaturized dielectric waveguide filters

    OpenAIRE

    Sandhu, MY; Hunter, IC

    2016-01-01

    Design techniques for a new class of integrated monolithic high-permittivity ceramic waveguide filters are presented. These filters enable a size reduction of 50% compared to air-filled transverse electromagnetic filters with the same unloaded Q-factor. Designs for Chebyshev and asymmetric generalised Chebyshev filter and a diplexer are presented with experimental results for an 1800 MHz Chebyshev filter and a 1700 MHz generalised Chebyshev filter showing excellent agreement with theory.

  3. Hybrid fiber-rod laser

    Science.gov (United States)

    Beach, Raymond J.; Dawson, Jay W.; Messerly, Michael J.; Barty, Christopher P. J.

    2012-12-18

    Single, or near single transverse mode waveguide definition is produced using a single homogeneous medium to transport both the pump excitation light and generated laser light. By properly configuring the pump deposition and resulting thermal power generation in the waveguide device, a thermal focusing power is established that supports perturbation-stable guided wave propagation of an appropriately configured single or near single transverse mode laser beam and/or laser pulse.

  4. Phase-locking to a free-space terahertz comb for metrological-grade terahertz lasers.

    Science.gov (United States)

    Consolino, L; Taschin, A; Bartolini, P; Bartalini, S; Cancio, P; Tredicucci, A; Beere, H E; Ritchie, D A; Torre, R; Vitiello, M S; De Natale, P

    2012-01-01

    Optical frequency comb synthesizers have represented a revolutionary approach to frequency metrology, providing a grid of frequency references for any laser emitting within their spectral coverage. Extending the metrological features of optical frequency comb synthesizers to the terahertz domain would be a major breakthrough, due to the widespread range of accessible strategic applications and the availability of stable, high-power and widely tunable sources such as quantum cascade lasers. Here we demonstrate phase-locking of a 2.5 THz quantum cascade laser to a free-space comb, generated in a LiNbO(3) waveguide and covering the 0.1-6 THz frequency range. We show that even a small fraction (quantum cascade laser is sufficient to generate a beat note suitable for phase-locking to the comb, paving the way to novel metrological-grade terahertz applications, including high-resolution spectroscopy, manipulation of cold molecules, astronomy and telecommunications.

  5. Anisotropic and nonlinear optical waveguides

    CERN Document Server

    Someda, CG

    1992-01-01

    Dielectric optical waveguides have been investigated for more than two decades. In the last ten years they have had the unique position of being simultaneously the backbone of a very practical and fully developed technology, as well as an extremely exciting area of basic, forefront research. Existing waveguides can be divided into two sets: one consisting of waveguides which are already in practical use, and the second of those which are still at the laboratory stage of their evolution. This book is divided into two separate parts: the first dealing with anisotropic waveguides, an

  6. Optical waveguide based on amorphous Er{sup 3+}-doped Ga-Ge-Sb-S(Se) pulsed laser deposited thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.f [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Nemec, P. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Jurdyc, A.M [Laboratoire de Physico-Chimie des Materiaux Luminescents (LPCML), UMR CNRS 5620, Universite Claude Bernard-Lyon 1, Villeurbanne (France); Zhang, S.; Charpentier, F. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Lhermite, H. [IETR-Microelectronique, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Charrier, J. [FOTON, UMR 6082-ENSSAT, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Guin, J.P. [LARMAUR, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Moreac, A. [Institut de Physique de Rennes, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Frumar, M. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Adam, J.-L. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France)

    2010-06-30

    Amorphous chalcogenide films play a motivating role in the development of integrated planar optical circuits due to their potential functionality in near infrared (IR) and mid-IR spectral regions. More specifically, the photoluminescence of rare earth ions in amorphous chalcogenide films can be used in laser and amplifier devices in the IR spectral domain. The aim of the present investigation was to optimize the deposition conditions for the fabrication of undoped and Er{sup 3+} doped sulphide and selenide thin films with nominal composition Ga{sub 5}Ge{sub 20}Sb{sub 10}S(Se){sub 65} or Ga{sub 5}Ge{sub 23}Sb{sub 5}S{sub 67} by pulsed laser deposition (PLD). The study of compositional, morphological and structural characteristics of the layers was realized by scanning electron microscopy-energy dispersive spectroscopy, atomic force microscopy and Raman spectroscopy analyses, respectively. Some optical properties (transmittance, index of refraction, optical band gap, etc.) of prepared chalcogenide films and optical losses were investigated as well. The clear identification of near-IR photoluminescence of Er{sup 3+} ions was obtained for both selenide and sulphide films. The decay of the {sup 4}I{sub 13/2} {yields} {sup 4}I{sub 15/2} transition at 1.54 {mu}m in Er{sup 3+} doped Ga{sub 5}Ge{sub 20}Sb{sub 10}S{sub 65} PLD sulphide films was studied to assess the effects of film thickness, rare earth concentration and multilayer PLD deposition on their spectroscopic properties.

  7. An experimental study of noise in mid-infrared quantum cascade lasers of different designs

    Science.gov (United States)

    Schilt, Stéphane; Tombez, Lionel; Tardy, Camille; Bismuto, Alfredo; Blaser, Stéphane; Maulini, Richard; Terazzi, Romain; Rochat, Michel; Südmeyer, Thomas

    2015-04-01

    We present an experimental study of noise in mid-infrared quantum cascade lasers (QCLs) of different designs. By quantifying the high degree of correlation occurring between fluctuations of the optical frequency and voltage between the QCL terminals, we show that electrical noise is a powerful and simple mean to study noise in QCLs. Based on this outcome, we investigated the electrical noise in a large set of 22 QCLs emitting in the range of 7.6-8 μm and consisting of both ridge-waveguide and buried-heterostructure (BH) lasers with different geometrical designs and operation parameters. From a statistical data processing based on an analysis of variance, we assessed that ridge-waveguide lasers have a lower noise than BH lasers. Our physical interpretation is that additional current leakages or spare injection channels occur at the interface between the active region and the lateral insulator in the BH geometry, which induces some extra noise. In addition, Schottky-type contacts occurring at the interface between the n-doped regions and the lateral insulator, i.e., iron-doped InP, are also believed to be a potential source of additional noise in some BH lasers, as observed from the slight reduction in the integrated voltage noise observed at the laser threshold in several BH-QCLs.

  8. Homogeneous spectral broadening of pulsed terahertz quantum cascade lasers by radio frequency modulation.

    Science.gov (United States)

    Wan, W J; Li, H; Cao, J C

    2018-01-22

    The authors present an experimental investigation of radio frequency modulation on pulsed terahertz quantum cascade lasers (QCLs) emitting around 4.3 THz. The QCL chip used in this work is based on a resonant phonon design which is able to generate a 1.2 W peak power at 10 K from a 400-µm-wide and 4-mm-long laser with a single plasmon waveguide. To enhance the radio frequency modulation efficiency and significantly broaden the terahertz spectra, the QCLs are also processed into a double-metal waveguide geometry with a Silicon lens out-coupler to improve the far-field beam quality. The measured beam patterns of the double-metal QCL show a record low divergence of 2.6° in vertical direction and 2.4° in horizontal direction. Finally we perform the inter-mode beat note and terahertz spectra measurements for both single plasmon and double-metal QCLs working in pulsed mode. Since the double-metal waveguide is more suitable for microwave signal transmission, the radio frequency modulation shows stronger effects on the spectral broadening for the double-metal QCL. Although we are not able to achieve comb operation in this work for the pulsed lasers due to the large phase noise, the homogeneous spectral broadening resulted from the radio frequency modulation can be potentially used for spectroscopic applications.

  9. Low crosstalk Arrayed Waveguide Grating with Cascaded Waveguide Grating Filter

    International Nuclear Information System (INIS)

    Deng Yang; Liu Yuan; Gao Dingshan

    2011-01-01

    We propose a highly compact and low crosstalk arrayed waveguide grating (AWG) with cascaded waveguide grating (CWGF). The side lobes of the silicon nanowire AWG, which are normally introduced by fabrication errors, can be effectively suppressed by the CWGF. And the crosstalk can be improved about 15dB.

  10. Modeling, fabrication and high power optical characterization of plasmonic waveguides

    DEFF Research Database (Denmark)

    Lavrinenko, Andrei; Lysenko, Oleg

    2015-01-01

    This paper describes modeling, fabrication and high power optical characterization of thin gold films embedded in silicon dioxide. The propagation vector of surface plasmon polaritons has been calculated by the effective index method for the wavelength range of 750-1700 nm and film thickness of 15......, 30 and 45 nm. The fabrication process of such plasmonic waveguides with width in the range of 1-100 μm and their quality inspection are described. The results of optical characterization of plasmonic waveguides using a high power laser with the peak power wavelength 1064 nm show significant deviation...... from the linear propagation regime of surface plasmon polaritons at the average input power of 100 mW and above. Possible reasons for this deviation are heating of the waveguides and subsequent changes in the coupling and propagation losses....

  11. An experimental study of noise in midinfrared quantum cascade lasers of different designs

    OpenAIRE

    Schilt, Stéphane; Tombez, Lionel; Tardy, Camille; Bismuto, Alfredo; Blaser, Stéphane; Maulini, Richard; Terazzi, Romain; Rochat, Michel; Südmeyer, Thomas

    2015-01-01

    We present an experimental study of noise in mid-infrared quantum cascade lasers (QCLs) of differ-ent designs. By quantifying the high degree of correlation occurring between fluctuations of the optical frequency and voltage between the QCL terminals, we show that electrical noise is a powerful and simple mean to study noise in QCLs. Based on this outcome, we investigated the electrical noise in a large set of 22 QCLs emitting in the range of 7.6–8 μm and consisting of both ridge-waveguide and...

  12. How does external feedback cause AlGaAs-based diode lasers to degrade?

    DEFF Research Database (Denmark)

    Hempel, Martin; Chi, Mingjun; Petersen, Paul Michael

    2013-01-01

    The effect of external feedback on the degradation of 808 nm emitting AlGaAs-based high-power broad-area diode lasers is studied. For this purpose, early stages of gradual degradation are induced by accelerated aging at high power levels. While the quantum well that actually experiences the highest...... total optical load remains unaffected, severe impact by point defects is observed on the cladding layers and the waveguide. Extended defects such as dislocations, however, are not observed in such early stages of degradation, which are accompanied by gradual power loss of a few percent only....

  13. Induced transparencies in metamaterial waveguides doped with quantum dots

    International Nuclear Information System (INIS)

    Singh, Mahi R; Brzozowski, Marek; Racknor, Chris

    2015-01-01

    The light-mater interaction in quantum dots doped artificial electromagnetic materials such as metamaterial waveguides has been studied. The effect of surface plasmon polaritons (SPPs) on the absorption coefficient of quantum dots in metamaterial waveguides is investigated. The waveguides are made by sandwiching a metamaterial slab between two dielectric material layers. An ensemble of quantum dots are deposited near the waveguide interfaces. The transfer matrix method is used to calculate the SSPs in the waveguide and the density matrix method and Schrödinger equation method are used to calculate the absorption spectrum. It is found that when the thickness of the metamaterial slab is greater than the SPP wavelength the SPP energy is degenerate. However when the thickness of the slab is smaller than that of the SPP wavelength the degeneracy of SPP state splits into odd and even SPP modes due the surface mode interaction (SMI) of the waveguide. We also found that the absorption spectrum has a minima (transparent state) which is due to strong coupling between excitons in quantum dots and SPPs in the waveguide. This transparent state is called the SPP induced transparency. However when the thickness of the slab is smaller than that of the SPP wavelength one transparent state in the absorption spectrum split into two transparent states due to the surface mode interaction. This type of transparency is called the SMI induced transparency. Transparent states can be achieved by applying pulse stress field or an intense laser pulse field. Hence present findings can be used to fabricate the metamaterial optical sensors and switches. (paper)

  14. Scalable electro-photonic integration concept based on polymer waveguides

    Science.gov (United States)

    Bosman, E.; Van Steenberge, G.; Boersma, A.; Wiegersma, S.; Harmsma, P.; Karppinen, M.; Korhonen, T.; Offrein, B. J.; Dangel, R.; Daly, A.; Ortsiefer, M.; Justice, J.; Corbett, B.; Dorrestein, S.; Duis, J.

    2016-03-01

    A novel method for fabricating a single mode optical interconnection platform is presented. The method comprises the miniaturized assembly of optoelectronic single dies, the scalable fabrication of polymer single mode waveguides and the coupling to glass fiber arrays providing the I/O's. The low cost approach for the polymer waveguide fabrication is based on the nano-imprinting of a spin-coated waveguide core layer. The assembly of VCSELs and photodiodes is performed before waveguide layers are applied. By embedding these components in deep reactive ion etched pockets in the silicon substrate, the planarity of the substrate for subsequent layer processing is guaranteed and the thermal path of chip-to-substrate is minimized. Optical coupling of the embedded devices to the nano-imprinted waveguides is performed by laser ablating 45 degree trenches which act as optical mirror for 90 degree deviation of the light from VCSEL to waveguide. Laser ablation is also implemented for removing parts of the polymer stack in order to mount a custom fabricated connector containing glass fiber arrays. A demonstration device was built to show the proof of principle of the novel fabrication, packaging and optical coupling principles as described above, combined with a set of sub-demonstrators showing the functionality of the different techniques separately. The paper represents a significant part of the electro-photonic integration accomplishments in the European 7th Framework project "Firefly" and not only discusses the development of the different assembly processes described above, but the efforts on the complete integration of all process approaches into the single device demonstrator.

  15. Laser semiconductor diode integrated with frequency doubler

    International Nuclear Information System (INIS)

    Tighineanu, I.; Dorogan, V.; Suruceanu, G.

    2003-01-01

    The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

  16. Effects of Laser Printer–Emitted Engineered Nanoparticles on Cytotoxicity, Chemokine Expression, Reactive Oxygen Species, DNA Methylation, and DNA Damage: A Comprehensive in Vitro Analysis in Human Small Airway Epithelial Cells, Macrophages, and Lymphoblasts

    Science.gov (United States)

    Pirela, Sandra V.; Miousse, Isabelle R.; Lu, Xiaoyan; Castranova, Vincent; Thomas, Treye; Qian, Yong; Bello, Dhimiter; Kobzik, Lester; Koturbash, Igor; Demokritou, Philip

    2015-01-01

    Background Engineered nanomaterials (ENMs) incorporated into toner formulations of printing equipment become airborne during consumer use. Although information on the complex physicochemical and toxicological properties of both toner powders and printer-emitted particles (PEPs) continues to grow, most toxicological studies have not used the actual PEPs but rather have primarily used raw toner powders, which are not representative of current exposures experienced at the consumer level during printing. Objectives We assessed the biological responses of a panel of human cell lines to PEPs. Methods Three physiologically relevant cell lines—small airway epithelial cells (SAECs), macrophages (THP-1 cells), and lymphoblasts (TK6 cells)—were exposed to PEPs at a wide range of doses (0.5–100 μg/mL) corresponding to human inhalation exposure durations at the consumer level of 8 hr or more. Following treatment, toxicological parameters reflecting distinct mechanisms were evaluated. Results PEPs caused significant membrane integrity damage, an increase in reactive oxygen species (ROS) production, and an increase in pro-inflammatory cytokine release in different cell lines at doses equivalent to exposure durations from 7.8 to 1,500 hr. Furthermore, there were differences in methylation patterns that, although not statistically significant, demonstrate the potential effects of PEPs on the overall epigenome following exposure. Conclusions The in vitro findings obtained in this study suggest that laser printer–emitted engineered nanoparticles may be deleterious to lung cells and provide preliminary evidence of epigenetic modifications that might translate to pulmonary disorders. Citation Pirela SV, Miousse IR, Lu X, Castranova V, Thomas T, Qian Y, Bello D, Kobzik L, Koturbash I, Demokritou P. 2016. Effects of laser printer–emitted engineered nanoparticles on cytotoxicity, chemokine expression, reactive oxygen species, DNA methylation, and DNA damage: a comprehensive in

  17. Low loss hollow-core waveguide on a silicon substrate

    Science.gov (United States)

    Yang, Weijian; Ferrara, James; Grutter, Karen; Yeh, Anthony; Chase, Chris; Yue, Yang; Willner, Alan E.; Wu, Ming C.; Chang-Hasnain, Connie J.

    2012-07-01

    Optical-fiber-based, hollow-core waveguides (HCWs) have opened up many new applications in laser surgery, gas sensors, and non-linear optics. Chip-scale HCWs are desirable because they are compact, light-weight and can be integrated with other devices into systems-on-a-chip. However, their progress has been hindered by the lack of a low loss waveguide architecture. Here, a completely new waveguiding concept is demonstrated using two planar, parallel, silicon-on-insulator wafers with high-contrast subwavelength gratings to reflect light in-between. We report a record low optical loss of 0.37 dB/cm for a 9-μm waveguide, mode-matched to a single mode fiber. Two-dimensional light confinement is experimentally realized without sidewalls in the HCWs, which is promising for ultrafast sensing response with nearly instantaneous flow of gases or fluids. This unique waveguide geometry establishes an entirely new scheme for low-cost chip-scale sensor arrays and lab-on-a-chip applications.

  18. Optical waveguides in LiTaO{sub 3} crystals fabricated by swift C{sup 5+} ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Guiyuan [School of Physics, State Key Laboratory of Crystal Materials and Key Laboratory of Particle Physics and Particle Irradiation (Ministry of Education), Shandong University, Jinan 250100 (China); School of Science, Shandong Jianzhu University, Jinan 250101 (China); He, Ruiyun [School of Physics, State Key Laboratory of Crystal Materials and Key Laboratory of Particle Physics and Particle Irradiation (Ministry of Education), Shandong University, Jinan 250100 (China); Akhmadaliev, Shavkat [Institute of Ion Beam and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01314 (Germany); Vázquez de Aldana, Javier R. [Laser Microprocessing Group, Universidad de Salamanca, Salamanca 37008 (Spain); Zhou, Shengqiang [Institute of Ion Beam and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01314 (Germany); Chen, Feng [School of Physics, State Key Laboratory of Crystal Materials and Key Laboratory of Particle Physics and Particle Irradiation (Ministry of Education), Shandong University, Jinan 250100 (China)

    2014-04-01

    We report on the optical waveguides, in both planar and ridge configurations, fabricated in LiTaO{sub 3} crystal by using carbon (C{sup 5+}) ions irradiation at energy of 15 MeV. The planar waveguide was produced by direct irradiation of swift C{sup 5+} ions, whilst the ridge waveguides were manufactured by using femtosecond laser ablation of the planar layer. The reconstructed refractive index profile of the planar waveguide has showed a barrier-shaped distribution, and the near-field waveguide mode intensity distribution was in good agreement with the calculated modal profile. After thermal annealing at 260 °C in air, the propagation losses of both the planar and ridge waveguides were reduced to 10 dB/cm.

  19. Hydrodynamic evolution of plasma waveguides for soft-x-ray amplifiers

    Science.gov (United States)

    Oliva, Eduardo; Depresseux, Adrien; Cotelo, Manuel; Lifschitz, Agustín; Tissandier, Fabien; Gautier, Julien; Maynard, Gilles; Velarde, Pedro; Sebban, Stéphane

    2018-02-01

    High-density, collisionally pumped plasma-based soft-x-ray lasers have recently delivered hundreds of femtosecond pulses, breaking the longstanding barrier of one picosecond. To pump these amplifiers an intense infrared pulse must propagate focused throughout all the length of the amplifier, which spans several Rayleigh lengths. However, strong nonlinear effects hinder the propagation of the laser beam. The use of a plasma waveguide allows us to overcome these drawbacks provided the hydrodynamic processes that dominate the creation and posterior evolution of the waveguide are controlled and optimized. In this paper we present experimental measurements of the radial density profile and transmittance of such waveguide, and we compare them with numerical calculations using hydrodynamic and particle-in-cell codes. Controlling the properties (electron density value and radial gradient) of the waveguide with the help of numerical codes promises the delivery of ultrashort (tens of femtoseconds), coherent soft-x-ray pulses.

  20. Direct optical measurement of light coupling into planar waveguide by plasmonic nanoparticles.

    Science.gov (United States)

    Pennanen, Antti M; Toppari, J Jussi

    2013-01-14

    Coupling of light into a thin layer of high refractive index material by plasmonic nanoparticles has been widely studied for application in photovoltaic devices, such as thin-film solar cells. In numerous studies this coupling has been investigated through measurement of e.g. quantum efficiency or photocurrent enhancement. Here we present a direct optical measurement of light coupling into a waveguide by plasmonic nanoparticles. We investigate the coupling efficiency into the guided modes within the waveguide by illuminating the surface of a sample, consisting of a glass slide coated with a high refractive index planar waveguide and plasmonic nanoparticles, while directly measuring the intensity of the light emitted out of the waveguide edge. These experiments were complemented by transmittance and reflectance measurements. We show that the light coupling is strongly affected by thin-film interference, localized surface plasmon resonances of the nanoparticles and the illumination direction (front or rear).