Properties of two-dimensional insulators: A DFT study of bimetallic oxide CrW{sub 2}O{sub 9} clusters adsorption on MgO ultrathin films

Energy Technology Data Exchange (ETDEWEB)

Zhu, Jia, E-mail: jia_zhu@jxnu.edu.cn [College of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang, Jiangxi 330022 (China); Zhang, Hui; Zhao, Ling; Xiong, Wei [College of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang, Jiangxi 330022 (China); Huang, Xin; Wang, Bin [Department of Chemistry, Fuzhou University, Fuzhou, Fujian, 350108 (China); Zhang, Yongfan, E-mail: zhangyf@fzu.edu.cn [Department of Chemistry, Fuzhou University, Fuzhou, Fujian, 350108 (China); State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou, Fujian, 350002 (China)

2016-08-30

Highlights: • Completely different properties of CrW{sub 2}O{sub 9} on films compared with that on surface. • The first example of CT by electron tunneling from film to bimetallic oxide cluster. • A progressive Lewis acid site, better catalytic activities for adsorbed CrW{sub 2}O{sub 9}. - Abstract: Periodic density functional theory calculations have been performed to study the electronic properties of bimetallic oxide CrW{sub 2}O{sub 9} clusters adsorbed on MgO/Ag(001) ultrathin films (<1 nm). Our results show that after deposition completely different structures, electronic properties and chemical reactivity of dispersed CrW{sub 2}O{sub 9} clusters on ultrathin films are observed compared with that on the thick MgO surface. On the thick MgO(001) surface, adsorbed CrW{sub 2}O{sub 9} clusters are distorted significantly and just a little electron transfer occurs from oxide surface to clusters, which originates from the formation of adsorption dative bonds at interface. Whereas on the MgO/Ag(001) ultrathin films, the resulting CrW{sub 2}O{sub 9} clusters keep the cyclic structures and the geometries are similar to that of gas-phase [CrW{sub 2}O{sub 9}]{sup −}. Interestingly, we predicted the occurrence of a net transfer of one electron by direct electron tunneling from the MgO/Ag(001) films to CrW{sub 2}O{sub 9} clusters through the thin MgO dielectric barrier. Furthermore, our work reveals a progressive Lewis acid site where spin density preferentially localizes around the Cr atom not the W atoms for CrW{sub 2}O{sub 9}/MgO/Ag(001) system, indicating a potentially good bimetallic oxide for better catalytic activities with respect to that of pure W{sub 3}O{sub 9} clusters. As a consequence, present results reveal that the adsorption of bimetallic oxide CrW{sub 2}O{sub 9} clusters on the MgO/Ag(001) ultrathin films provide a new perspective to tune and modify the properties and chemical reactivity of bimetallic oxide adsorbates as a function of the thickness

Magnetic Properties of Fe(001) Thin Films on GaAs(001) Deposited by RF Magnetron Sputtering

International Nuclear Information System (INIS)

Ikeya, Hirokazu; Takahashi, Yutaka; Inaba, Nobuyuki; Kirino, Fumiyoshi; Ohtake, Mitsuru; Futamoto, Masaaki

2011-01-01

Fe thin films, down to 6 nm thick, were prepared on GaAs(001) substrates by RF magnetron sputtering. The x-ray diffraction (XRD) analyses show that the epitaxial thin films of Fe(001) were grown with cube-on-cube orientation on GaAs(001). Magnetic properties were investigated by vibrating sample magnetometry (VSM) and ferromagnetic resonance (FMR) spectroscopy. The magnetization curves obtained by applying in-plane magnetic fields indicate that easy (hard) direction is along [100] ([110]) and the saturation magnetization is close to the bulk values. The in-plane magnetic anisotropy measured by FMR shows four-fold symmetry, as expected for bcc Fe. We did not observe the in-plane uniaxial magnetic anisotropy reported on the MBE-grown Fe films on GaAs substrates.

Cellulose nanocrystal submonolayers by spin coating

NARCIS (Netherlands)

Kontturi, E.J.; Johansson, L.S.; Kontturi, K.S.; Ahonen, P.; Thune, P.C.; Laine, J.

2007-01-01

Dilute concentrations of cellulose nanocrystal solutions were spin coated onto different substrates to investigate the effect of the substrate on the nanocrystal submonolayers. Three substrates were probed: silica, titania, and amorphous cellulose. According to atomic force microscopy (AFM) images,

The W alloying effect on thermal stability and hardening of nanostructured Cu–W alloyed thin films

Science.gov (United States)

Zhao, J. T.; Zhang, J. Y.; Hou, Z. Q.; Wu, K.; Feng, X. B.; Liu, G.; Sun, J.

2018-05-01

In order to achieve desired mechanical properties of alloys by manipulating grain boundaries (GBs) via solute decoration, it is of great significance to understand the underlying mechanisms of microstructural evolution and plastic deformation. In this work, nanocrystalline (NC) Cu–W alloyed films with W concentrations spanning from 0 to 40 at% were prepared by using magnetron sputtering. Thermal stability (within the temperature range of 200 °C–600 °C) and hardness of the films were investigated by using the x-ray diffraction, transmission electron microscope (TEM) and nanoindentation, respectively. The NC pure Cu film exhibited substantial grain growth upon all annealing temperatures. The Cu–W alloyed films, however, displayed distinct microstructural evolution that depended not only on the W concentration but also on the annealing temperature. At a low temperature of 200 °C, all the Cu–W alloyed films were highly stable, with unconspicuous change in grain sizes. At high temperatures of 400 °C and 600 °C, the microstructural evolution was greatly controlled by the W concentrations. The Cu–W films with low W concentration manifested abnormal grain growth (AGG), while the ones with high W concentrations showed phase separation. TEM observations unveiled that the AGG in the Cu–W alloyed thin films was rationalized by GB migration. Nanoindentation results showed that, although the hardness of both the as-deposited and annealed Cu–W alloyed thin films monotonically increased with W concentrations, a transition from annealing hardening to annealing softening was interestingly observed at the critical W addition of ∼25 at%. It was further revealed that an enhanced GB segregation associated with detwinning was responsible for the annealing hardening, while a reduced solid solution hardening for the annealing softening.

The W alloying effect on thermal stability and hardening of nanostructured Cu-W alloyed thin films.

Science.gov (United States)

Zhao, J T; Zhang, J Y; Hou, Z Q; Wu, K; Feng, X B; Liu, G; Sun, J

2018-05-11

In order to achieve desired mechanical properties of alloys by manipulating grain boundaries (GBs) via solute decoration, it is of great significance to understand the underlying mechanisms of microstructural evolution and plastic deformation. In this work, nanocrystalline (NC) Cu-W alloyed films with W concentrations spanning from 0 to 40 at% were prepared by using magnetron sputtering. Thermal stability (within the temperature range of 200 °C-600 °C) and hardness of the films were investigated by using the x-ray diffraction, transmission electron microscope (TEM) and nanoindentation, respectively. The NC pure Cu film exhibited substantial grain growth upon all annealing temperatures. The Cu-W alloyed films, however, displayed distinct microstructural evolution that depended not only on the W concentration but also on the annealing temperature. At a low temperature of 200 °C, all the Cu-W alloyed films were highly stable, with unconspicuous change in grain sizes. At high temperatures of 400 °C and 600 °C, the microstructural evolution was greatly controlled by the W concentrations. The Cu-W films with low W concentration manifested abnormal grain growth (AGG), while the ones with high W concentrations showed phase separation. TEM observations unveiled that the AGG in the Cu-W alloyed thin films was rationalized by GB migration. Nanoindentation results showed that, although the hardness of both the as-deposited and annealed Cu-W alloyed thin films monotonically increased with W concentrations, a transition from annealing hardening to annealing softening was interestingly observed at the critical W addition of ∼25 at%. It was further revealed that an enhanced GB segregation associated with detwinning was responsible for the annealing hardening, while a reduced solid solution hardening for the annealing softening.

Growth and characterization of ultrathin epitaxial MnO film on Ag(001)

Science.gov (United States)

Kundu, Asish K.; Menon, Krishnakumar S. R.

2016-07-01

We present here a comprehensive growth procedure to obtain a well-ordered MnO(001) ultrathin film on Ag(001) substrate. Depending upon the oxygen partial pressure during the growth, different phases of manganese oxide have been detected by Low Energy Electron Diffraction (LEED) and X-ray Photoelectron Spectroscopic (XPS) studies. A modified growth scheme has been adopted to get well-ordered and stoichiometric MnO(001) ultrathin film. The detailed growth mechanism of epitaxial MnO film on Ag(001) has been studied step by step, using LEED and XPS techniques. Observation of sharp (1 × 1) LEED pattern with a low inelastic background, corresponds to a long-range atomic order with low defect densities indicating the high structural quality of the film. The Mn 2p and Mn 3s core-level spectra confirm the oxidation state as well as the stoichiometry of the grown MnO films. Apart from the growth optimization, the evolution of strain relaxation of the MnO(001) film with film thickness has been explored.

The mechanism of sputter-induced orientation change in YBCO films on MgO (001)

International Nuclear Information System (INIS)

Huang, Y.; Vuchic, B.V.; Baldo, P.; Merkle, K.L.; Buchholz, D.B.; Mahajan, S.; Lei, J.S.; Markworth, P.R.; Chang, R.P.H.

1996-12-01

The mechanisms of the sputter-induced orientation change in YBa 2 Cu 3 O 7-x (YBCO) films grown on MgO (001) substrates by pulsed organometallic beam epitaxy (POMBE) are investigated by x-ray diffraction. Rutherford backscatter spectroscopy (RBS), cross-section TEM (XTEM) and microanalysis. It is found that the W atom implantation concurring with the ion sputtering plays an important role in effecting the orientation change. This implantation changes the surface structure of the substrate and induces an intermediate layer in the initial growth of the YBCO film, which in turn acts as a template that induces the orientation change. It seems that the surface morphology change caused by ion sputtering has only a minor effect on the orientation change

SQUID-magnetometry on Fe monolayers on GaAs(001) in UHV

Energy Technology Data Exchange (ETDEWEB)

Kebe, T

2006-12-11

This thesis deals with the characterization of the growth and of the magnetic properties of ultrathin Fe films on GaAs(001). In particular, a scanning SQUID (superconducting quantum interference device) magnetometer was used in ultrahigh vacuum (UHV), whose performance has been improved within the scope of this thesis. By probing the magnetic stray field of a magnetized film, the absolute remanent magnetization can be determined with submonolayer sensitivity. In the context of this thesis the magnetic stray field has been calculated analytically. The combined use of SQUID and ferromagnetic resonance (FMR) on the same film in UHV allows for the independent determination of the magnetization and the magnetic anisotropy constants as a function of temperature, film thickness, topography of the substrate and oxygen exposure. The results of this thesis are: 1. The thickness dependent remanent magnetization from 2 to 20 monolayer (ML) Fe on GaAs(001) without cap layer was measured as a function of temperature. 2. The continuous in-plane reorientation of the magnetization (from [1 1 0] to [1 0 0]) of Fe films with increasing film thickness was observed using the scanning SQUID technique and showed good agreement with FMR measurements. 3. The influence of controlled oxygen exposure on the remanent magnetization and the magnetic anisotropy constants of 5 to 16 ML Fe was investigated. A faster reduction of the magnetization is found for the thinner Fe films when the volume of the Fe oxide is taken into consideration. At low oxygen exposure (<10 Langmuir), the perpendicular uniaxial anisotropy constant K{sub 2} {sub perpendicular} {sub to} is reduced by about 40% whereas other anisotropy contributions remain virtually unchanged. In addition, structural investigations using IV-LEED during the oxygen exposure were carried out. 4. An 8.6 ML Fe/GaAs(001) film which was exposed to 25000 L O{sub 2} exhibits a spontaneous magnetization perpendicular to the film plane at low

Growth model of Au films on Ru(001)

International Nuclear Information System (INIS)

Canessa, E.; Calmetta, A.

1992-06-01

In an attempt to find generic features on the fractal growth of Au films deposited on Ru(001), a simple simulation model based on irreversible diffusion-limited aggregation (DLA) is discussed. Highly irregular two-dimensional dentritic islands of Au particles that gradually grow on a larger host lattice of Ru particles and have fractal dimension d f approx. 1.70 each, are generated via a multiple had-hoc version of the DLA algorithm for single aggregates. Annealing effects on the islands morphology are reproduced assuming different sticking probabilities at nearest-neighbour lattice sites of Au films on Ru(001). Using simulation data, islands growth are described in analogy to diffusion-limited, precipitate growth with soft impingement of precipities. This leads to analyse thin film island growth kinetics in such fractal systems and to predict a main peak in scattering intensity patterns due to interisland interference. (author). 12 refs, 4 figs

VCSELs based on arrays of sub-monolayer InGaAs quantum dots

International Nuclear Information System (INIS)

Blokhin, S. A.; Maleev, N. A.; Kuz'menkov, A. G.; Shernyakov, Yu. M.; Novikov, I. I.; Gordeev, N. Yu.; Dyudelev, V. V.; Sokolovskii, G. S.; Kuchinskii, V. I.; Kulagina, M. M.; Maximov, M. V.; Ustinov, V. M.; Kovsh, A. R.; Mikhrin, S. S.; Ledentsov, N. N.

2006-01-01

Vertical-cavity surface-emitting lasers (VCSELs) with an active region based on sub-monolayer InGaAs quantum dots and doped AlGaAs/GaAs distributed Bragg reflectors were grown by MBE. VCSELs with current aperture of 3 μm in diameter demonstrate single-mode lasing in 980-nm range with the threshold current of 0.6 mA, maximum output power up to 4 mW, and external differential efficiency of 68%. Multimode VCSELs with a (10-12)-μm aperture demonstrate ultralow internal optical loss of 0.09% per pass, which compares favorably with the best results obtained in similar lasers with undoped distributed Bragg reflectors

Texture control and growth mechanism of WSe{sub 2} film prepared by rapid selenization of W film

Energy Technology Data Exchange (ETDEWEB)

Li, Hongchao [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Chongyi Zhangyuan Tungsten Industry Corporation Limited, Ganzhou 341300 (China); Gao, Di; Li, Kun; Pang, Mengde; Xie, Senlin [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Liu, Rutie, E-mail: llrrtt@csu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Zou, Jianpeng [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China)

2017-02-01

Highlights: • We present a highly efficient method for preparing WSe{sub 2} film by rapid selenization. • The W film phase composition has little effect on WSe{sub 2} film orientation. • W film density is a critical factor that influences the WSe{sub 2} orientation. • A growth model was proposed for two kinds of WSe{sub 2} film textures. - Abstract: The tungsten diselenide (WSe{sub 2}) films with different orientation present unique properties suitable for specific applications, such as WSe{sub 2} with a C-axis⊥substrate for optoelectronics and WSe{sub 2} with a C-axis // substrate for electrocatalysts. Orientation control of WSe{sub 2} is essential for realizing the practical applications. In this letter, a WSe{sub 2} film has been prepared via rapid selenization of a magnetron-sputtered tungsten (W) film. The influence of the magnetron-sputtered W film on WSe{sub 2} film growth was studied systematically. Scanning electron microscopy, X-ray diffractometry and high-resolution transmission electron microscopy were used to evaluate the morphology, microstructure and phase composition of the W and WSe{sub 2} films. The substrate temperature has a significant effect on the W film phase composition, but little effect on the WSe{sub 2} film orientation. The WSe{sub 2} orientation can be controlled by changing the W film microstructure. A dense W film that is deposited at low pressure is conducive to the formation of WSe{sub 2} with a C-axis⊥substrate, whereas a porous W film deposited at high pressure favors the formation of WSe{sub 2} with a C-axis // substrate. A growth model for the WSe{sub 2} film with different texture has been proposed based on the experimental results. The direction of selenium (Se) vapor diffusion differs at the top and side surfaces. This is a key factor for the preparation of anisotropic WSe{sub 2} films. Highly oriented WSe{sub 2} films with a C-axis⊥substrate grow from the dense W film deposited at low pressure because Se vapor

Incorporated W Roles on Microstructure and Properties of W-C:H Films by a Hybrid Linear Ion Beam Systems

Directory of Open Access Journals (Sweden)

Peng Guo

2013-01-01

Full Text Available W-incorporated diamond-like carbon (W-C:H films were fabricated by a hybrid beams system consisting of a DC magnetron sputtering and a linear ion source. The W concentration (1.08~31.74 at.% in the film was controlled by varying the sputtering current. The cross-sectional topography, composition, and microstructure of the W-C:H films were investigated by SEM, XPS, TEM, and Raman spectroscopy. The mechanical and tribological properties of the films as a function of W concentration were evaluated by a stress-tester, nanoindentation, and ball-on-disk tribometer, respectively. The results showed that films mainly exhibited the feature of amorphous carbon when W concentration of the films was less than 4.38 at.%, where the incorporated W atoms would be bonded with C atoms and resulted in the formation of WC1-x nanoparticles. The W-C:H film with 4.38 at.% W concentration showed a minimum value of residual compressive stress, a higher hardness, and better tribological properties. Beyond this W concentration range, both the residual stress and mechanical properties were deteriorated due to the growth of tungsten carbide nanoparticles in the carbon matrix.

Helium retention in krypton ion pre-irradiated nanochannel W film

Science.gov (United States)

Qin, Wenjing; Ren, Feng; Zhang, Jian; Dong, Xiaonan; Feng, Yongjin; Wang, Hui; Tang, Jun; Cai, Guangxu; Wang, Yongqiang; Jiang, Changzhong

2018-02-01

Nanochannel tungsten (W) film is a promising candidate as an alternative to bulk W for use in fusion applications. In previous work it has been shown to have good radiation resistance under helium (He) irradiation. To further understand the influence of the irradiation-induced displacement cascade damage on helium retention behaviour in a fusion environment, in this work, nanochannel W film and bulk W were pre-irradiated by 800 keV Kr2+ ions to the fluence of 2.6  ×  1015 ions cm-2 and subsequently irradiated by 40 keV He+ ions to the fluence of 5  ×  1017 ions cm-2. The Kr2+ ion pre-irradiation greatly increases helium retention in the form of small clusters and retards the formation of large clusters. It can effectively inhibit surface helium blistering under high temperature annealing. Compared with bulk W, no cracks were found in the nanochannel W film post-irradiated by He+ ions at high fluence. The release of helium from the nanochannel W film is more than one order of magnitude higher than that of bulk W whether they are irradiated by single He+ ions or sequentially irradiated by Kr2+ and He+ ions. Moreover, swelling of the bulk W is more serious than that of the nanochannel film. Therefore, nanochannel W film has a higher radiation tolerance performance in the synergistic irradiation.

Electrodeposited Ni-W magnetic thin films with columnar nanocrystallites

International Nuclear Information System (INIS)

Sulitanu, N.; Brinza, F.

2002-01-01

Nanocrystalline Ni-W thin films (140 nm) containing from zero to 18 wt % W were electrolytically prepared and structural and magnetic characterized. XRD, SEM and TEM investigations have revealed that all segregated Ni columns are fcc-type whose [111] axis is oriented perpendicular to the film plane and have 140 nm in height and 6-27 nm in diameter. Depending on film composition, two types of nanostructures were observed: (a) single-phase nanostructure ( i nterphases , namely W enriched particles boundaries, and (b) two-phase nanostructure (7-18 wt %) in which a second Ni-W amorphous phase or even amorphous-disordered mixture separates the magnetic columnar Ni nanocrystallites (d = 6-14 nm). The columnar crystallites have an easy magnetization direction along their long axis mainly due to the in-plane internal biaxial stresses. Magnetic characteristics of prepared thin films are presented. (Authors)

Infrared reflectance of GaN films grown on Si(001) substrates

International Nuclear Information System (INIS)

Zhang, Xiong; Hou, Yong-Tian; Feng, Zhe-Chuan; Chen, Jin-Li

2001-01-01

GaN thin films on Si(001) substrates are studied by infrared reflectance (IRR) spectroscopy at room temperature (RT). Variations in the IRR spectral line shape with the microstructure of GaN/Si(011) film are quantitatively explained in terms of a three-component effective medium model. In this model, the nominally undoped GaN film is considered to consist of three elementary components, i.e., single crystalline GaN grains, pores (voids), and inter-granulated materials (amorphous GaN clusters). Such a polycrystalline nature of the GaN/Si(001) films was confirmed by scanning electron microscopy measurements. It was demonstrated that based on the proposed three-component effective medium model, excellent overall simulation of the RT-IRR spectra can be achieved, and the fine structures of the GaN reststrahlen band in the measured RT-IRR spectra can also be interpreted very well. Furthermore, the volume fraction for each component in the GaN/Si(001) film was accurately determined by fitting the experimental RT-IRR spectra with the theoretical simulation. These results indicate that IRR spectroscopy can offer a sensitive and convenient tool to probe the microstructure of GaN films grown on silicon. [copyright] 2001 American Institute of Physics

Molecular-resolution imaging of pentacene on KCl(001

Directory of Open Access Journals (Sweden)

Julia L. Neff

2012-02-01

Full Text Available The growth of pentacene on KCl(001 at submonolayer coverage was studied by dynamic scanning force microscopy. At coverages below one monolayer pentacene was found to arrange in islands with an upright configuration. The molecular arrangement was resolved in high-resolution images. In these images two different types of patterns were observed, which switch repeatedly. In addition, defects were found, such as a molecular vacancy and domain boundaries.

XPS and TEM study of W-DLC/DLC double-layered film

International Nuclear Information System (INIS)

Takeno, Takanori; Komiyama, Takao; Miki, Hiroyuki; Takagi, Toshiyuki; Aoyama, Takashi

2009-01-01

A double-layered film of tungsten-containing diamond-like carbon (W-DLC) and DLC, (W-DLC)/DLC, was investigated. A film of 1.6 μm in thickness was deposited onto silicon substrate. The investigate double-layered coating was deposited by using the combination of PECVD and co-sputtering of tungsten metal target. Structure, interface and chemical bonding state of the investigated film were analyzed by Transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS). From the results of the analyses, the structure of double-layered film is that amorphous phase of carbon is continued from DLC to W-DLC and tungsten metal clusters are dispersed in W-DLC layer.

Interactions of oxygen and ethylene with submonolayer Ag films supported on Ni(111).

Science.gov (United States)

Rettew, Robert E; Meyer, Axel; Senanayake, Sanjaya D; Chen, Tsung-Liang; Petersburg, Cole; Ingo Flege, J; Falta, Jens; Alamgir, Faisal M

2011-06-21

We investigate the oxidation of, and the reaction of ethylene with, Ni(111) with and without sub-monolayer Ag adlayers as a function of temperature. The addition of Ag to Ni(111) is shown to enhance the activity towards the ethylene epoxidation reaction, and increase the temperature at which ethylene oxide is stable on the surface. We present a systematic study of the formation of chemisorbed oxygen on the Ag-Ni(111) surfaces and correlate the presence and absence of O(1-) and O(2-) surface species with the reactivity towards ethylene. By characterizing the samples with low-energy electron microscopy (LEEM) in combination with X-ray photoelectron spectroscopy (XPS), we have identified specific growth of silver on step-edge sites and successfully increased the temperature at which the produced ethylene oxide remains stable, a trait which is desirable for catalysis.

Surface Resonance Bands on (001)W: Experimental Dispersion Relations

DEFF Research Database (Denmark)

Willis, R. F.; Feuerbacher, B.; Christensen, N. Egede

1977-01-01

A band of unbound surface states (resonances), located in an energy region above the vacuum threshold corresponding to an energy band gap in the electron states of the bulk crystal, has been observed by angle-resolved secondary-electron-emission spectroscopy. The experimental dispersion behavior...... is in agreement with the two-dimensional band structure of a clean (001)W surface recently proposed by Smith and Mittheiss....

Perpendicular magnetic anisotropy in Mn2VIn (001) films: An ab initio study

Science.gov (United States)

Zipporah, Muthui; Robinson, Musembi; Julius, Mwabora; Arti, Kashyap

2018-05-01

First principles study of the magnetic anisotropy of Mn2VIn (001) films show perpendicular magnetic anisotropy (PMA), which increases as a function of the thickness of the film. Density functional theory (DFT) as implemented in the Vienna Ab initio simulation package (VASP) is employed here to perform a comprehensive theoretical investigation of the structural, electronic and magnetic properties of the Mn2VIn(001) films of varying thickness. Our calculations were performed on fully relaxed structures, with five to seventeen mono layers (ML). The degree of spin polarization is higher in the (001) Mn2VIn thin films as compared to the bulk in contrast to what is usually the case and as in Mn2VAl, which is isoelectronic to Mn2VIn as well as inCo2VIn (001) films studied for comparison. Tetragonal distortions are found in all the systems after relaxation. The distortion in the Mn2VIn system persists even for the 17ML thin film, resulting in PMA in the Mn2VIn system. This significant finding has potential to contribute to spin transfer torque (STT) and magnetic random access memory MRAM applications, as materials with PMA derived from volume magnetocrystalline anisotropy are being proposed as ideal magnetic electrodes.

Atomic structure and work function of the metal-film systems: lithium-(011) face of tungsten or molybdenum

International Nuclear Information System (INIS)

Kanash, O.V.; Fedorus, A.G.

1984-01-01

The atomic structure and phase transitions in lithium films and also the variation of the work function under lithium adsorption on the (011) face of W or Mo are studied by the low electron diffraction and contact potential difference methods in a wide range of submonolayer coverage. In the low coverage range (theta 5/9), identical sets of anisotropic structures are formed on both substrates which are specific for localized adsorption. In the coverage range between 1/4 for W (011) or 1/6 for Mo (011) and 5/9 (for both substrates) the film grows by virtue of two consecutive first order phase transitions. In the remaining theta region the film compression proceeds continuously. A model of mixing of cells of various sizes is used to explain the continuity of the compression process. At low coverage the film atomic structure corresponds to a predominant effect of dipole-dipole interaction betWeen the adatoms, whereas at high coverage it corresponds to an indirect interaction. The temperature stability of the films at different theta is studied. The effect of the film structure on the work function and surface diffusion is discussed

Adsorption of lithium-lanthanum films on W (112) face

International Nuclear Information System (INIS)

Gupalo, M.S.; Smereka, T.P.; Palyukh, B.M.; Babkin, G.V.

1986-01-01

The method of contact potential difference is employed to study the electron adsorption properties (the work function phi and adsorption heat q) lithium films on a lanthanized W(112) surface. It is found that the work function of mixed lithium-lanthanum films is intermediate between phi of the summands. The presence of lanthanum on a W(112) face reduces the adsorption heat of lithium

Thermoelectric properties of epitaxial ScN films deposited by reactive magnetron sputtering onto MgO(001) substrates

Science.gov (United States)

Burmistrova, Polina V.; Maassen, Jesse; Favaloro, Tela; Saha, Bivas; Salamat, Shuaib; Rui Koh, Yee; Lundstrom, Mark S.; Shakouri, Ali; Sands, Timothy D.

2013-04-01

Epitaxial ScN(001) thin films were grown on MgO(001) substrates by dc reactive magnetron sputtering. The deposition was performed in an Ar/N2 atmosphere at 2 × 10-3 Torr at a substrate temperature of 850 °C in a high vacuum chamber with a base pressure of 10-8 Torr. In spite of oxygen contamination of 1.6 ± 1 at. %, the electrical resistivity, electron mobility, and carrier concentration obtained from a typical film grown under these conditions by room temperature Hall measurements are 0.22 mΩ cm, 106 cm2 V-1 s-1, and 2.5 × 1020 cm-3, respectively. These films exhibit remarkable thermoelectric power factors of 3.3-3.5 × 10-3 W/mK2 in the temperature range of 600 K to 840 K. The cross-plane thermal conductivity is 8.3 W/mK at 800 K yielding an estimated ZT of 0.3. Theoretical modeling of the thermoelectric properties of ScN calculated using a mean-free-path of 23 nm at 300 K is in very good agreement with the experiment. These results also demonstrate that further optimization of the power factor of ScN is possible. First-principles density functional theory combined with the site occupancy disorder technique was used to investigate the effect of oxygen contamination on the electronic structure and thermoelectric properties of ScN. The computational results suggest that oxygen atoms in ScN mix uniformly on the N site forming a homogeneous solid solution alloy. Behaving as an n-type donor, oxygen causes a shift of the Fermi level in ScN into the conduction band without altering the band structure and the density of states.

Investigation of cosputtered W--C thin films as diffusion barriers

International Nuclear Information System (INIS)

Yang, H.Y.; Zhao, X.

1988-01-01

Polycrystalline thin films of W--C were deposited on single-crystal Si or SiO 2 substrates by rf planar magnetron cosputtering of graphite (C) and W targets. The performance of cosputtered W 75 C 25 thin films as diffusion barriers between a Si substrate and metallic overlayers of Ag, Au, or Al was investigated. Backscattering spectrometry and x-ray diffraction are used to detect metallurgical interactions. Four-point probe measurement of resistance is employed to monitor the electrical stability of the metallization schemes upon thermal annealing in a vacuum for 30 min in temperature ranges from 500 to 700 0 C. The electrical resistivity of W 75 C 25 films is 140 μΩ cm. A W 75 C 25 layer 1100 A thick prevents metallurgical interdiffusion and reaction between Au or Ag overlayers and the Si substrates up to 700 0 C, and between an Al overlayer and the Si substrate up to 450 0 C.tential

Self-sustained pulsation in the oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

International Nuclear Information System (INIS)

Kuzmenkov, A. G.; Ustinov, V. M.; Sokolovskii, G. S.; Maleev, N. A.; Blokhin, S. A.; Deryagin, A. G.; Chumak, S. V.; Shulenkov, A. S.; Mikhrin, S. S.; Kovsh, A. R.; McRobbie, A. D.; Sibbett, W.; Cataluna, M. A.; Rafailov, E. U.

2007-01-01

The authors report the observation of strong self-pulsations in molecular-beam epitaxy-grown oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots. At continuous-wave operation, self-pulsations with pulse durations of 100-300 ps and repetition rates of 0.2-0.6 GHz were measured. The average optical power of the pulsations was 0.5-1.0 mW at the laser continuous-wave current values of 1.5-2.5 mA

Growth, morphology, and conductivity in semimetallic/metallic films on Si(001)

Energy Technology Data Exchange (ETDEWEB)

Jnawali, Giriraj

2009-06-09

This dissertation deals with the study of epitaxial growth of semimetallic (Bi) and metallic (Ag) films on Si(001) as well as in situ electrical transport study of those films via surface manipulation. The focus of the transport measurements is to study the influence of the surface morphology or structure on the resistance of the film. In spite of the large lattice mismatch and different lattice geometry, it is possible to grow epitaxial Bi(111) films on Si(001) substrates, which are surprisingly smooth, relaxed and almost free of defects. Due to the two-fold symmetry of the substrates, the Bi(111) film is composed of crystallites rotated by 90 with respect to each other. Annealing of 6 nm film from 150 K to 450 K enables the formation of a periodic interfacial misfit dislocations, which accommodates a remaining lattice mismatch of 2.3 %. The surface/interface roughness and the bulk defect density of the film found to be extremely low, indicating the high crystalline quality of the film with atomically smooth surface and abrupt interface. Similar to the Bi films, Ag grows in a (111) orientation on Si(001) with two 90 rotated domains. The remaining strain of 2.2 % (tensile) is accommodated by the formation of an ordered network of dislocations. The Ag film exhibits atomically smooth surface. Those Bi films and Ag films were used as model systems to study the influence of the surface morphology on the electrical resistance. Surprisingly, all the Bi films (3-170 nm thicknesses) have shown an anomalous behavior of conductance with temperature and thickness. As in the case of doped semiconductor, the conductance increases exponentially from 150 K to 300 K and saturates at 350 K before finally decreasing with temperature. In situ measurements of the resistance during additional Bi deposition on the smooth Bi(111) films exhibit a square root dependent with coverage after a linear increase at very low coverage (1 % of a BL). During additional deposition of Bi, carriers are

Highly aligned vertical GaN nanowires using submonolayer metal catalysts

Science.gov (United States)

Wang, George T [Albuquerque, NM; Li, Qiming [Albuquerque, NM; Creighton, J Randall [Albuquerque, NM

2010-06-29

A method for forming vertically oriented, crystallographically aligned nanowires (nanocolumns) using monolayer or submonolayer quantities of metal atoms to form uniformly sized metal islands that serve as catalysts for MOCVD growth of Group III nitride nanowires.

Hydrogen evolution on Au(111) covered with submonolayers of Pd

DEFF Research Database (Denmark)

Björketun, Mårten; Karlberg, Gustav; Rossmeisl, Jan

2011-01-01

A theoretical investigation of electrochemical hydrogen evolution on Au(111) covered with submonolayers of Pd is presented. The size and shape of monoatomically high Pd islands formed on the Au(111) surface are determined using Monte Carlo simulations, for Pd coverages varying from 0.02 to 0.95 ML....... The energetics of adsorption and desorption of hydrogen on/from different types of sites on the Pd-Au(111) surface are assessed by means of density functional theory calculations combined with thermodynamic modeling. Based on the density functional and Monte Carlo data, the hydrogen evolution activity...... is evaluated with a micro-kinetic model. The analysis reproduces measured Pd-coverage-dependent activities for Pd submonolayers exceeding similar to 0.15 ML and enables the relative contributions from different types of electrocatalytically active sites to be determined. Finally, the implications of surface...

Microstructure and hardness evolution of nanochannel W films irradiated by helium at high temperature

Science.gov (United States)

Qin, Wenjing; Wang, Yongqiang; Tang, Ming; Ren, Feng; Fu, Qiang; Cai, Guangxu; Dong, Lan; Hu, Lulu; Wei, Guo; Jiang, Changzhong

2018-04-01

Plasma facing materials (PFMs) face one of the most serious challenges in fusion reactors, including unprecedented harsh environment such as 14.1 MeV neutron and transmutation gas irradiation at high temperature. Tungsten (W) is considered to be one of the most promising PFM, however, virtually insolubility of helium (He) in W causes new material issues such as He bubbles and W "fuzz" microstructure. In our previous studies, we presented a new strategy using nanochannel structure designed in the W film to increase the releasing of He atoms and thus to minimize the He nucleation and "fuzz" formation behavior. In this work, we report the further study on the diffusion of He atoms in the nanochannel W films irradiated at a high temperature of 600 °C. More specifically, the temperature influences on the formation and growth of He bubbles, the lattice swelling, and the mechanical properties of the nanochannel W films were investigated. Compared with the bulk W, the nanochannel W films possessed smaller bubble size and lower bubble areal density, indicating that noticeable amounts of He atoms have been released out along the nanochannels during the high temperature irradiations. Thus, with lower He concentration in the nanochannel W films, the formation of the bubble superlattice is delayed, which suppresses the lattice swelling and reduces hardening. These aspects indicate the nanochannel W films have better radiation resistance even at high temperature irradiations.

Observation of second spin reorientation transition within ultrathin region in Fe films on Ag(001) surface

International Nuclear Information System (INIS)

Khim, T.-Y.; Shin, M.; Lee, H.; Park, B.-G.; Park, J.-H.

2014-01-01

We acquired direct measurements for in-plane and perpendicular-to-plane magnetic moments of Fe films using an x-ray magnetic circular dichroism technique with increase of the Fe thickness (up to 40 Å) on the Ag(001) surface. Epitaxial Fe/Ag(001) films were grown in situ with the thickness varying from 2 Å to 40 Å, and the magnetic anisotropy was carefully investigated as a function of the film thickness. We found re-entrance of the in-plane magnetic anisotropy of the Fe film in ultrathin region. The results manifest that the epitaxial Fe/Ag(001) film undergoes two distinct spin reorientation transitions from in-plane to out-of-plane at the film thickness t ≈ 9 Å and back to in-plane at t ≈ 18 Å as t increases.

Stabilization of polar Mn3O4(001) film on Ag(001): Interplay between kinetic and structural stability

Science.gov (United States)

Kundu, Asish K.; Barman, Sukanta; Menon, Krishnakumar S. R.

2017-10-01

Stabilization processes of polar surfaces are often very complex and interesting. Understanding of these processes is crucial as it ultimately determines the properties of the film. Here, by the combined study of Low Energy Electron Diffraction (LEED), X-ray Photoelectron Spectroscopy (XPS) and Ultraviolet Photoemission Spectroscopy (UPS) techniques we show that, although there can be many processes involved in the stabilization of the polar surfaces, in case of Mn3O4(001)/Ag(001), it goes through different reconstructions of the Mn2O4 terminated surface which is in good agreements with the theoretical predictions. The complex surface phase diagram has been probed by LEED as a function of film thickness, oxygen partial pressure and substrate temperature during growth, while their chemical compositions have been probed by XPS. Below a critical film thickness of ∼ 1 unit cell height (8 sublayers or 3 ML) of Mn3O4 and oxygen partial pressure range of 2 × 10-8 mbar oxygen partial pressure (> 5 × 10-7 mbar) and higher temperature UHV annealing. The origin of these stripes has been explained with the help of UPS results.

Structural and electronic properties of rare-earth silicide thin films at Si(111)

Energy Technology Data Exchange (ETDEWEB)

Dues, Christof; Schmidt, Wolf Gero; Sanna, Simone [Lehrstuhl fuer Theoretische Physik, Universitaet Paderborn (Germany)

2016-07-01

Rare-earth (RE) silicides thin films on silicon surfaces are currently of high interest. They grow nearly defect-free because of the small lattice mismatch, and exhibit very low Schottky-barriers on n-type silicon. They even give rise to the self-organized formation of RE silicide nanowires on the Si(001) and vicinal surfaces. Depending on the amount of deposited RE atoms, a plethora of reconstructions are observed for the RE silicide. While one monolayer leads to the formation of a 1 x 1-reconstruction, several monolayer thick silicides crystallize in a √(3) x √(3) R30 {sup circle} superstructure. Submonolayer RE deposition leads to different periodicities. In this work we investigate the formation of RE silicides thin films on Si(111) within the density functional theory. The energetically favored adsorption site for RE adatoms is determined calculating the potential energy surface. As prototypical RE, Dysprosium is used. Additional calculations are performed for silicides formed by different RE elements. We calculate structural properties, electronic band structures and compare measured and simulated STM images. We consider different terminations for the 5 x 2 reconstruction occurring in the submonolayer regime and investigate their stability by means of ab initio thermodynamics. The same method is employed to predict the stable silicide structure as a function of the deposited RE atoms.

Thermal stability and electrical characteristics of NiSi films with electroplated Ni(W) alloy

International Nuclear Information System (INIS)

Xin Yuhang; Hu Anmin; Li Ming; Mao Dali

2011-01-01

In this study, an electroplating method to deposited Ni, crystalline NiW(c-NiW), amorphous NiW (a-NiW) films on P-type Si(1 0 0) were used to form Ni-silicide (NiSi) films. After annealed at various temperatures, sheet resistance of Ni/Cu, c-NiW/Cu and a-NiW/Cu was measured to observe the performance of those diffusion barrier layers. With W added in the barrier layer, the barrier performance was improved. The results of XRD and resistance measurement of the stacked Si/Ni(W)/Cu films reveal that Cu atom could diffuse through Ni barrier layer at 450 deg. C, could diffuse through c-NiW at 550 deg. C, but could hardly diffuse through a-NiW barrier layer. c-NiW layer has a better barrier performance than Ni layer, meanwhile the resistance is lower than a-NiW layer.

Carrier dynamics in submonolayer InGaAs/GaAs quantum dots

DEFF Research Database (Denmark)

Xu, Zhangcheng; Zhang, Yating; Hvam, Jørn Märcher

2006-01-01

Carrier dynamics of submonolayer InGaAs/GaAs quantum dots (QDs) were studied by microphotoluminecence (MPL), selectively excited photoluminescence (SEPL), and time-resolved photoluminescence (TRPL). MPL and SEPL show the coexistence of localized and delocalized states, and different local phonon...

White organic light-emitting devices based on blue fluorescent dye combined with dual sub-monolayer

Energy Technology Data Exchange (ETDEWEB)

Yang, Huishan, E-mail: yanghuishan1697@163.com

2013-10-15

White organic light-emitting devices have been realized by using highly blue fluorescent dye 4,4′-Bis(2,2-diphenyl-ethen-1-yl)-4,4′-di-(tert-butyl)phenyl(p-TDPVBi) and [2-methyl-6-[2-(2, 3,6,7-tetrahydro-1H, red fluorescent dye 5H-benzo[ij] quinolizin-9-yl) ethenyl]-4H-pyran-4-ylidene] propane-dinitrile(DCM2), together with well known green fluorescent dye quinacridone (QAD). The fabrication of multilayer WOLEDs did not involve the hard-to-control doping process. The structure of the device is ITO/m-MTDATA (45 nm)/NPB(8 nm)/p-TDPVBi(15 nm)/DCM2(x nm)/Alq{sub 3} (5 nm)/QAD(y nm)/Alq{sub 3}(55 nm)/LiF(1 nm)/Al, where 4,4′,4′′-tris{N,-(3-methylphenyl)-N-phenylamine}triphenylamine (m-MTDATA) acts as a hole injection layer, N,N′-bis-(1-naphthyl)-N, N′-diphenyl-1, 1′-biph-enyl-4, 4′-diamine (NPB) acts as a hole transport layer, p-TDPVBi acts as a blue emitting layer, DCM2 acts as a red emitting layer, QAD acts as a green emitting layer, tris-(8-hydroxyquinoline) aluminum (Alq{sub 3}) acts as an electron transport layer, and WOLEDs of devices A, B, C and D are different in layer thickness of DCM2 and QAD, respectively. To change the thickness of dual sub-monolayer DCM2 and QAD, the WOLEDs were obtained. When x, y=0.05, 0.1, the Commission Internationale de 1’Eclairage (CIE) coordinates of the device change from (0.4458, 0.4589) at 3 V to (0.3137, 0.3455) at 12 V that are well in the white region, and the color temperature and color rendering index were 5348 K and 85 at 8 V, respectively. Its maximum luminance was 35260 cd/m{sup 2} at 12 V, and maximum current efficiency and maximum power efficiency were 13.54 cd/A at 12 V and 6.68 lm/W at 5 V, respectively. Moreover, the current efficiency is largely insensitive to the applied voltage. The electroluminescence intensity of white EL devices varied only little at deferent dual sub-monolayer. Device D exhibited relatively high color rendering index (CRI) in the range of 88–90, which was essentially

Phase transformations in sputter-deposited W-doped TiO2 films during annealing in air

International Nuclear Information System (INIS)

Saladukhin, I. A.; Abadias, G.

2013-01-01

Pure and tungsten-doped TiO 2 films are characterized as amorphous in the as-deposited state by XRD. A crystallization of titanium dioxide occurs during their annealing in air. Depending on the tungsten and nitrogen doping level, anatase or rutile phase formation is observed. Both of these phases are thermally stable in all interval of the temperatures used during annealing. Phase composition and lattice parameter analysis indicates on the formation of substitutional Ti 1 -xW x O 2 films. N-doped Ti 0 .75W 0 .25O 2 film is more resistant against high-temperature oxidation as compared to Ti 0 .74W 0 .26O 2 film and, especially, as compared to Ti 0 .60W 0 .40O 2 film. (authors)

Structure, magnetism, and interface properties of epitactical thin Fe and FePt films on GaAs(001) substrates; Struktur, Magnetismus und Grenzflaecheneigenschaften epitaktischer duenner Fe- und FePt-Filme auf GaAs(001)-Substraten

Energy Technology Data Exchange (ETDEWEB)

Schuster, Ellen Ursula

2007-12-17

The research in this thesis is focused on the study of the Fe spin structure and interface magnetism of thin epitaxial Fe layers or epitaxial FePt alloy films with chemical L1{sub 0} order on GaAs(001) surfaces. The main method of investigation was isotope-specific conversion electron Moessbauer spectroscopy (CEMS) combined with the {sup 57}Fe probe-layer technique in the temperature range of 4.2-300 K. The film structure was studied using electron diffraction (RHEED) and X-ray diffraction (XRD). The chemical order parameter S determined by XRD was found to increase with rising growth temperature, T{sub S}, to a maximum value of 0.71, until long range order is destroyed at T{sub S}>350 C by alloying with the substrate. As an important result a linear correlation between short-range order (revealed by the relative spectral area of the L1{sub 0} phase) and long-range order S was observed. The observed perpendicular Fe spin texture, characterized by the mean tilting angle left angle {theta} right angle of the Fe spins (relative to the film normal direction), was found to correlate with the L1{sub 0} phase content and with S. Furthermore, epitaxial Fe(001) films on GaAs(001)-(4 x 6) and on GaAs(001)-LED surfaces were grown successfully. In the initial stage of Fe film growth non-monotonous behavior of the in-plane lattice parameter was observed by RHEED. The magnetic hyperfine field distributions P(B{sub hf}) at the Fe/GaAs interface extracted from CEMS spectra for T{sub S}=-140 C or room temperature (RT) were found to be very similar. The observed large mean hyperfine fields of left angle B{sub hf} right angle {approx}25-27 T at the interface indicate the presence of high average Fe moments of 1.7-1.8 {mu}{sub B}. Nonmagnetic interface layers either can be excluded (Fe/GaAs) or are very thin (0.5 ML,Fe/GaAs-LED). Owing to its island structure an ultrathin (1.9 ML thick) uncoated Fe(001) film on GaAs(001)-(4 x 6) shows superparamagnetism with a blocking temperature of

Photoelectron diffraction of magnetic ultrathin films: Fe/Cu(001)

Energy Technology Data Exchange (ETDEWEB)

Tobin, J.G. (Lawrence Livermore National Lab., CA (USA)); Wagner, M.K. (Wisconsin Univ., Madison, WI (USA). Dept. of Chemistry); Guo, X.Q.; Tong, S.Y. (Wisconsin Univ., Milwaukee, WI (USA). Dept. of Physics)

1991-01-03

The preliminary results of an ongoing investigation of Fe/Cu(001) are presented here. Energy dependent photoelectron diffraction, including the spin-dependent variant using the multiplet split Fe3s state, is being used to investigate the nanoscale structures formed by near-monolayer deposits of Fe onto Cu(001). Core-level photoemission from the Fe3p and Fe3s states has been generated using synchrotron radiation as the tunable excitation source. Tentatively, a comparison of the experimental Fe3p cross section measurements with multiple scattering calculations indicates that the Fe is in a fourfold hollow site with a spacing of 3.6{Angstrom} between it and the atom directly beneath it, in the third layer. This is consistent with an FCC structure. The possibility of utilizing spin-dependent photoelectron diffraction to investigate magnetic ultrathin films will be demonstrated, using our preliminary spectra of the multiplet-split Fe3s os near-monolayer Fe/Cu(001). 18 refs., 10 figs.

Pressure-Driven Commensurate-Incommensurate Transition Low-Temperature Submonolayer Krypton on Graphite

DEFF Research Database (Denmark)

Nielsen, Mourits; Als-Nielsen, Jens Aage; Bohr, Jakob

1981-01-01

By using D2 gas as a source of two-dimensional spreading pressure, we have studied the commensurate-incommensurate (C-I) transition in submonolayer Kr on ZYX graphite at temperatures near 40 K. High-resolution synchrotron x-ray diffraction results show both hysteresis and C-I phase coexistence...

Epitaxial Fe3Si/Ge/Fe3Si thin film multilayers grown on GaAs(001)

International Nuclear Information System (INIS)

Jenichen, B.; Herfort, J.; Jahn, U.; Trampert, A.; Riechert, H.

2014-01-01

We demonstrate Fe 3 Si/Ge/Fe 3 Si/GaAs(001) structures grown by molecular-beam epitaxy and characterized by transmission electron microscopy, electron backscattered diffraction, and X-ray diffraction. The bottom Fe 3 Si epitaxial film on GaAs is always single crystalline. The structural properties of the Ge film and the top Fe 3 Si layer depend on the substrate temperature during Ge deposition. Different orientation distributions of the grains in the Ge and the upper Fe 3 Si film were found. The low substrate temperature T s of 150 °C during Ge deposition ensures sharp interfaces, however, results in predominantly amorphous films. We find that the intermediate T s (225 °C) leads to a largely [111] oriented upper Fe 3 Si layer and polycrystal films. The high T s of 325 °C stabilizes the [001] oriented epitaxial layer structure, i.e., delivers smooth interfaces and single crystal films over as much as 80% of the surface area. - Highlights: • Fe 3 Si/Ge/Fe 3 Si/GaAs(001) structures are grown by MBE. • The bottom Fe 3 Si film is always single crystalline. • The properties of the Ge film depend on the substrate temperature during deposition. • Optimum growth conditions lead to almost perfect epitaxy of Ge on Fe 3 Si

Surfactant and counter-ion distribution in styrene-butyl acrylate-acrylic acid dry latex submonolayers

Directory of Open Access Journals (Sweden)

Keslarek Amauri José

2004-01-01

Full Text Available Styrene-butyl acrylate-acrylic acid latex submonolayers prepared using a non-reactive phosphate surfactant together with a reactive sulfonate surfactant were examined in a transmission microscope using electron energy loss spectroscopy imaging (ESI-TEM. Phosphorus is nearly absent from the particles core but it is detected in a thick shell and in unusual, strongly scattering structures with a low carbon content, and largely made out of inorganic phosphate. P is also dispersed outside the particles, while S is uniformly distributed within then. The Na and N elemental maps show that the respective monovalent ions (Na+ and NH4+ have different distributions, in the latex: Na signal within the particles is stronger than in the background, while N is accumulated at the particle borders. The distributions of surfactant and counter-ions are thus different from some current assumptions, but they support recent results on the distribution of ionic constituents in latex films, by scanning electric potential microscopy.

Thermal conductivity of nitride films of Ti, Cr, and W deposited by reactive magnetron sputtering

International Nuclear Information System (INIS)

Jagannadham, Kasichainula

2015-01-01

Nitride films of Ti, Cr, and W were deposited using reactive magnetron sputtering from metal targets in argon and nitrogen plasma. TiN films with (200) orientation were achieved on silicon (100) at the substrate temperature of 500 and 600 °C. The films were polycrystalline at lower temperature. An amorphous interface layer was observed between the TiN film and Si wafer deposited at 600 °C. TiN film deposited at 600 °C showed the nitrogen to Ti ratio to be near unity, but films deposited at lower temperature were nitrogen deficient. CrN film with (200) orientation and good stoichiometry was achieved at 600 °C on Si(111) wafer but the film deposited at 500 °C showed cubic CrN and hexagonal Cr 2 N phases with smaller grain size and amorphous back ground in the x-ray diffraction pattern. An amorphous interface layer was not observed in the cubic CrN film on Si(111) deposited at 600 °C. Nitride film of tungsten deposited at 600 °C on Si(100) wafer was nitrogen deficient, contained both cubic W 2 N and hexagonal WN phases with smaller grain size. Nitride films of tungsten deposited at 500 °C were nonstoichiometric and contained cubic W 2 N and unreacted W phases. There was no amorphous phase formed along the interface for the tungsten nitride film deposited at 600 °C on the Si wafer. Thermal conductivity and interface thermal conductance of all the nitride films of Ti, Cr, and W were determined by transient thermoreflectance technique. The thermal conductivity of the films as function of deposition temperature, microstructure, nitrogen stoichiometry and amorphous interaction layer at the interface was determined. Tungsten nitride film containing both cubic and hexagonal phases was found to exhibit much higher thermal conductivity and interface thermal conductance. The amorphous interface layer was found to reduce effective thermal conductivity of TiN and CrN films

Low-dose effects in the sputtering of evaporated films

Energy Technology Data Exchange (ETDEWEB)

Florio, A.R.O.; Alonso, E.V.; Baragiola, R.A.; Ferron, J. (Comision Nacional de Energia Atomica, San Carlos de Bariloche (Argentina). Centro Atomico Bariloche)

1983-05-01

We report measurements of the dose dependence of the sputtering of evaporated films by 30 keV ions under UHV. An initial (sub-monolayer) enhanced sputtering is attributed to the removal of weakly bound atoms; this enhancement does not depend on the incidence angle of the projectile.

Appearance of large crystalline domains in VO{sub 2} films grown on sapphire (001) and their phase transition characteristics

Energy Technology Data Exchange (ETDEWEB)

Azhan, Nurul Hanis; Su, Kui; Okimura, Kunio, E-mail: okifn@keyaki.cc.u-tokai.ac.jp [Graduate School of Science and Technology, Tokai University, Hiratsuka 259-1292 (Japan); Zaghrioui, Mustapha; Sakai, Joe [GREMAN, UMR 7347 CNRS, Université François Rabelais de Tours, Parc de Grandmont 37200 Tours (France)

2015-06-28

We report the first observation of large crystalline domains of several μm-size in VO{sub 2} films deposited on Al{sub 2}O{sub 3} (001) substrates by rf-biased reactive sputtering technique. The large crystalline domains, dominated with random in-plane oriented growth of (011){sub M1}-orientation, appear only under adequate substrate biasing, such as 10 W, while most biasing conditions result in conventional nanosized grains of highly oriented (010){sub M1}-orientation. Two temperature-controlled analyses, x-ray diffraction and micro-Raman spectroscopy, have revealed that some parts of large crystalline domains undergo intermediate monoclinic (M2) phase during the thermally-induced structural phase transition from monoclinic (M1) to rutile-tetragonal (R) phase. As an effect of the appearance of large crystalline domains, the film showed in-plane tensile stress, resulting in high T{sub IMT} of 69 °C due to the elongation of the V-V distance in its low-temperature monoclinic phase.

On factors controlling activity of submonolayer bimetallic catalysts: Nitrogen desorption

Energy Technology Data Exchange (ETDEWEB)

Guo, Wei; Vlachos, Dionisios G., E-mail: vlachos@udel.edu [Center for Catalytic Science and Technology, Catalysis Center for Energy Innovation, Department of Chemical and Biomolecular Engineering, University of Delaware, Newark, Delaware 19716 (United States)

2014-01-07

We model N{sub 2} desorption on submonolayer bimetallic surfaces consisting of Co clusters on Pt(111) via first-principles density functional theory-based kinetic Monte Carlo simulations. We find that submonolayer structures are essential to rationalize the high activity of these bimetallics in ammonia decomposition. We show that the N{sub 2} desorption temperature on Co/Pt(111) is about 100 K higher than that on Ni/Pt(111), despite Co/Pt(111) binding N weaker at low N coverages. Co/Pt(111) has substantially different lateral interactions than single metals and Ni/Pt. The lateral interactions are rationalized with the d-band center theory. The activity of bimetallic catalysts is the result of heterogeneity of binding energies and reaction barriers among sites, and the most active site can differ on various bimetallics. Our results are in excellent agreement with experimental data and demonstrate for the first time that the zero-coverage descriptor, used until now, for catalyst activity is inadequate due not only to lacking lateral interactions but importantly to presence of multiple sites and a complex interplay of thermodynamics (binding energies, occupation) and kinetics (association barriers) on those sites.

Measurement of positron reemission from thin single-crystal W(100) films

International Nuclear Information System (INIS)

Chen, D.M.; Lynn, K.G.; Pareja, R.; Nielsen, B.

1985-01-01

Epitaxial thin single-crystal (100) tungsten films 1000, 2500, and 5000 A thick have been fabricated by high-vacuum electron-beam evaporation. These films were subsequently used as thin-film moderators for the study of the positron-transmission-reemission process with a variable-energy (0--80 keV) monoenergetic positron beam in an ultrahigh-vacuum system. The films were shown to be routinely cleanable by heating first in oxygen (10 -6 Torr) and then in vacuum (10 -9 Torr). Transmission and back reemission of slow positrons from these surfaces was observed. The positron work function, phi/sub +/ has been determined to be approx. =3.0 eV ( +- 0.3 eV). The transmission slow positrons were emitted in a narrow cone with a full width at half maximum of approx. =30 0 consistent with the angular distribution of back-reemission positrons. The reemitted yields as a function of incident positron energy were found to be very different between forward reemission and back reemission. The maximum forward-reemission yields were 18% for 1000-A-thick W film and 12% for 2500-A-thick W film at 5 and 10 keV optimum incident positron energies, respectively. These results show that one can use thin single-crystal tungsten films as positron moderators or remoderators

Epitaxial growth and characterization of CoO/Fe(001) thin film layered structures

International Nuclear Information System (INIS)

Brambilla, A.; Sessi, P.; Cantoni, M.; Duo, L.; Finazzi, M.; Ciccacci, F.

2008-01-01

By means of X-ray photoemission spectroscopy and low energy electron diffraction, we show that it is possible to grow good quality thin epitaxial CoO films on Fe(001) substrates, through deposition in oxygen atmosphere. In particular, the composition and the structure of CoO(001)/Fe(001) bilayer systems and Fe(001)/CoO(001)/Fe(001) trilayer systems have been investigated by monitoring the evolution of the chemical interactions at the interfaces as a function of CoO thickness and growth temperature. We observe the presence of Fe oxides at the CoO/Fe interface and of a thin layer of metallic cobalt at the upper Fe/CoO interface of trilayer systems

Low-dose effects in the sputtering of evaporated films

International Nuclear Information System (INIS)

Florio, A.R.O.; Alonso, E.V.; Baragiola, R.A.; Ferron, J.

1983-01-01

We report measurements of the dose dependence of the sputtering of evaporated films by 30 keV ions under UHV. An initial (sub-monolayer) enhanced sputtering is attributed to the removal of weakly bound atoms; this enhancement does not depend on the incidence angle of the projectile. (author)

Magnetic dichroism and spin structure of antiferromagnetic NiO(001) films

NARCIS (Netherlands)

Altieri, S; Finazzi, M; Hsieh, HH; Lin, HJ; Chen, CT; Hibma, T; Valeri, S; Sawatzky, GA

2003-01-01

We find that Ni L-2 edge x-ray magnetic linear dichroism is fully reversed for NiO(001) films on materials with reversed lattice mismatch. We relate this phenomenon to a preferential stabilization of magnetic S domains with main spin component either in or out of the plane, via dipolar interactions.

LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates

Science.gov (United States)

Rafique, Subrina; Karim, Md Rezaul; Johnson, Jared M.; Hwang, Jinwoo; Zhao, Hongping

2018-01-01

This paper presents the homoepitaxy of Si-doped β-Ga2O3 thin films on semi-insulating (010) and (001) Ga2O3 substrates via low pressure chemical vapor deposition with a growth rate of ≥1 μm/h. Both high resolution scanning transmission electron microscopy and X-ray diffraction measurements demonstrated high crystalline quality homoepitaxial growth of these thin films. Atomic resolution STEM images of the as-grown β-Ga2O3 thin films on (010) and (001) substrates show high quality material without extended defects or dislocations. The charge carrier transport properties of the as-grown Si-doped β-Ga2O3 thin films were characterized by the temperature dependent Hall measurement using van der Pauw patterns. The room temperature carrier concentrations achieved for the (010) and (001) homoepitaxial thin films were ˜1.2 × 1018 cm-3 and ˜9.5 × 1017 cm-3 with mobilities of ˜72 cm2/V s and ˜42 cm2/V s, respectively.

Self-consistent studies of magnetic thin film Ni (001)

International Nuclear Information System (INIS)

Wang, C.S.; Freeman, A.J.

1979-01-01

Advances in experimental methods for studying surface phenomena have provided the stimulus to develop theoretical methods capable of interpreting this wealth of new information. Of particular interest have been the relative roles of bulk and surface contributions since in several important cases agreement between experiment and bulk self-consistent (SC) calculations within the local spin density functional formalism (LSDF) is lacking. We discuss our recent extension of the (LSDF) approach to the study of thin films (slabs) and the role of surface effects on magnetic properties. Results are described for Ni (001) films using our new SC numerical basis set LCAO method. Self-consistency within the superposition of overlapping spherical atomic charge density model is obtained iteratively with the atomic configuration as the adjustable parameter. Results are presented for the electronic charge densities and local density of states. The origin and role of (magnetic) surface states is discussed by comparison with results of earlier bulk calculations

Polarity control of GaN epitaxial films grown on LiGaO2(001) substrates and its mechanism.

Science.gov (United States)

Zheng, Yulin; Wang, Wenliang; Li, Xiaochan; Li, Yuan; Huang, Liegen; Li, Guoqiang

2017-08-16

The polarity of GaN epitaxial films grown on LiGaO 2 (001) substrates by pulsed laser deposition has been well controlled. It is experimentally proved that the GaN epitaxial films grown on nitrided LiGaO 2 (001) substrates reveal Ga-polarity, while the GaN epitaxial films grown on non-nitrided LiGaO 2 (001) substrates show N-polarity. The growth mechanisms for these two cases are systematically studied by first-principles calculations based on density functional theory. Theoretical calculation presents that the adsorption of a Ga atom preferentially occurs at the center of three N atoms stacked on the nitrided LiGaO 2 (001) substrates, which leads to the formation of Ga-polarity GaN. Whereas the adsorption of a Ga atom preferentially deposits at the top of a N atom stacked on the non-nitrided LiGaO 2 (001) substrates, which results in the formation of N-polarity GaN. This work of controlling the polarity of GaN epitaxial films is of paramount importance for the fabrication of group-III nitride devices for various applications.

Structural, magnetic, and lattice-dynamical interface properties of epitactical iron films on InAs(001) and GaAs(001) substrates; Strukturelle, magnetische und gitterdynamische Grenzflaecheneigenschaften von epitaktischen Eisenfilmen auf InAs(001)- und GaAs(001)-Substraten

Energy Technology Data Exchange (ETDEWEB)

Peters, Robert

2009-07-14

In this thesis the structure, magnetism and interface properties of ferromagnet-semiconductor hybrid structures were investigated. The main goal of this thesis was to obtain information on physical properties at the interface between a ferromagnetic metal and a III-V semiconductor (SC). For this purpose Fe films that serve as ferromagnetic contacts were deposited in ultrahigh vacuum (UHV) on InAs(001) and GaAs(001) substrates, respectively, and investigated. Both systems are interesting model systems with respect to electrical spin injection from a ferromagnetic metal into a semiconductor. In order for spin injection to occur, it is known that a Schottky barrier must form at the Fe/SC interface. Film growth and film structure were investigated in-situ in UHV by electron diffraction (RHEED) and ex-situ by X-ray diffraction. For determining the magnetic properties {sup 57}Fe conversion electron Moessbauer spectroscopy (CEMS) combines with {sup 57}Fe probe-layer technique was employed at different temperatures. Further, the partial Fe phonon density of states (PDOS) at the Fe/InAs (001) interface was determined by nuclear resonant inelastic X-ray scattering (NRIXS) from a {sup 57}Fe probe-layer. The CEM spectra (at room temperature) provided relatively high values of the average hyperfine magnetic field of left angle B{sub hf} right angle {proportional_to} 27 T and of the most-probable hyperfine magnetic field of B{sub hf,} {sub peak} {proportional_to} 30 T. This provides evidence for relativ high average Fe magnetic moments of {proportional_to} 1.8 {mu}{sub B}. The partial Fe phonon density of states (PDOS) at the Fe/InAs(001) interface is remarkably modified as compared to that of bulk bcc Fe. Using magnetometry and {sup 57}Fe CEMS, a strong temperature dependent magnetization directions was observed for Fe/Tb multilayers on InAs(001). Furthermore it is shown that such Fe/Tb multilayers on p-InAs(001) with perpendicular spin texture are useful as potential

Magnetic properties of epitaxial MnAs thin films on GaAs (001)

CERN Document Server

Park, Y S

2000-01-01

The magnetic properties of two types of epitaxial MnAs films on GaAs (001) substrates in the thickness range of 20 approx 200 nm were studied. Using longitudinal a magneto-optical Kerr-effect(MOKE) apparatus at lambda=632.8 nm, we determined the Curie temperatures of the 100-nm thick films to be 54.0+-0.5 .deg. C and 63.7+-0.5 .deg. C for type A films and type B films, respectively. The observed Curie temperatures corresponded to increases of 36.8 .deg. C and 33.9 .deg. C per one percent increase in the unit cell volume for type A and B, respectively. The normalized maximum MOKE signal from the type A film exhibited a first-order-like magnetic transition while that of type B underwent a second-order-like transition. These different behaviors between types A and B stem from different residual stresses being exerted on the hexagonal phase. Utilizing a Foner-type vibrating sample magnetometer at room temperature, we examined the thickness dependence of the coercive force and the saturation magnetization of the f...

Ge clusters and wetting layers forming from granular films on the Si(001) surface

International Nuclear Information System (INIS)

Storozhevykh, M S; Arapkina, L V; Yuryev, V A

2016-01-01

The report studies the transformation of a Ge granular film deposited on the Si(001) surface at room temperature into a Ge/Si(001) heterostructure as a result of rapid heating and annealing at 600 °C. As a result of the short-term annealing at 600 °C in conditions of a closed system, the Ge granular film transforms into a usual wetting layer and Ge clusters with multimodal size distribution and Ge oval drops having the highest number density. After the long-term thermal treatment of the Ge film at the same temperature, Ge drops disappear; the large clusters increase their sizes at the expense of the smaller ones. The total density of Ge clusters on the surface drastically decreases. The wetting layer mixed c(4 x 2) + p(2 x 2) reconstruction transforms into a single c(4 x 2) one which is likely to be thermodynamically favoured. Pyramids or domes are not observed on the surface after any annealing. (paper)

Stability of nanosized alloy thin films: Faulting and phase separation in metastable Ni/Cu/Ag-W films

International Nuclear Information System (INIS)

Csiszár, G.; Kurz, S.J.B.; Mittemeijer, E.J.

2016-01-01

A comparative study of Me(=Ni/Cu/Ag)-based, W-alloyed, nanocrystalline, heavily faulted thin films was carried out to identify parameters stabilizing the nanocrystalline nature upon thermal treatment. The three systems, initially of comparably, heavily twinned (twin boundaries at spacings of 1–5 nm) microstructures showed similarities but also strikingly different behaviours upon annealing, as observed by application of in particular X-ray diffraction (line-broadening) analysis and (high resolution) transmission electron microscopy. During annealing in the range of 30–600 °C, (i) segregation at the planar faults (for Me = Ni) and at grain boundaries (for Me = Ni,Cu,Ag), as well as nanoscale phase separation (for Me = Cu,Ag) take place, (ii) distinct grain growth does not occur and (iii) the twin boundaries either are largely preserved ((Ni(W) and Ag(W)) or disappear totally (Cu(W))), which was ascribed to an altered faulting energy, due to change of the amount of W segregated at the twin boundaries, and to the evolution of nano-precipitates. The nanosized films exhibit very large internal (macro)stresses parallel to the surface, which change during annealing in the range of 1 GPa (tensile) to −3 GPa (compressive) and thus are sensitive to the microstructural changes in the films (decomposition and relaxation) that happen on a nanoscale. The results are discussed in terms of thermodynamic and/or kinetic constraints controlling these processes and thus the thermal stability of the systems concerned.

Structural and dielectric properties of (001) and (111)-oriented BaZr0.2Ti0.8O3 epitaxial thin films

International Nuclear Information System (INIS)

Ventura, J.; Fina, I.; Ferrater, C.; Langenberg, E.; Coy, L.E.; Polo, M.C.; Garcia-Cuenca, M.V.; Fabrega, L.; Varela, M.

2010-01-01

We have grown and characterized BaZr 0.2 Ti 0.8 O 3 (BZT) epitaxial thin films deposited on (001) and (111)-oriented SrRuO 3 -buffered SrTiO 3 substrates by pulsed laser deposition. Structural and morphological characterizations were performed using X-ray diffractometry and atomic force microscopy, respectively. A cube-on-cube epitaxial relationship was ascertained from the θ-2θ and φ diffractograms in both (001) and (111)-oriented films. The (001)-oriented films showed a smooth granular morphology, whereas the faceted pyramid-like crystallites of the (111)-oriented films led to a rough surface. The dielectric response of BZT at room temperature was measured along the growth direction. The films were found to be ferroelectric, although a well-saturated hysteresis loop was obtained only for the (001)-oriented films. High leakage currents were observed for the (111) orientation, likely associated to charge transport along the boundaries of its crystallites. The remanent polarization, coercive field, dielectric constant, and relative change of dielectric permittivity (tunability) of (111)-oriented BZT were higher than those of (001)-oriented BZT.

Transient Mobility on Submonolayer Island Growth: An Exploration of Asymptotic Effects in Modeling

Science.gov (United States)

Morales-Cifuentes, Josue; Einstein, Theodore L.; Pimpinelli, Alberto

In studies of epitaxial growth, modeling of the smallest stable cluster (i+1 monomers, with i the critical nucleus size), is paramount in understanding growth dynamics. Our previous work has tackled submonolayer growth by modeling the effect of ballistic monomers, hot-precursors, on diffusive dynamics. Different scaling regimes and energies were predicted, with initial confirmation by applying to para-hexaphenyl submonolayer studies. Lingering questions about the applicability and behavior of the model are addressed. First, we show how an asymptotic approximation based on the growth exponent, α (N Fα) allows for robustness of modeling to experimental data; second, we answer questions about non-monotonicity by exploring the behavior of the growth exponent across realizable parameter spaces; third, we revisit our previous para-hexaphenyl work and examine relevant physical parameters, namely the speed of the hot-monomers. We conclude with an exploration of how the new asymptotic approximation can be used to strengthen the application of our model to other physical systems.

Molecular-dynamics theory of the temperature-dependent surface phonons of W(001)

International Nuclear Information System (INIS)

Wang, C.Z.; Fasolino, A.; Tosatti, E.

1987-04-01

We study the temperature-dependent zone-boundary surface phonons across the c(2x2)→1x1 reconstruction phase transition of the clean W(001) surface. Velocity-velocity correlations and hence the phonon spectral densities are calculated by molecular dynamics for the surface atoms of a finite thickness (001) slab, with interatomic potentials established in a previous study of the surface statics. Our calculated k = (1/2,1/2)(2π/a) surface phonon are dominated by three main low-frequency modes. Of these, the longitudinal and the shear horizontal are reconstruction-related and display critical broadening and softening at the phase transition, while the third, the shear vertical, is basically unaffected. The reconstruction phase mode, shear horizontal, appears to be responsible for the phase fluctuations which destroy long-range order at the transition. (author). 30 refs, 12 figs

Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots

DEFF Research Database (Denmark)

Xu, Zhangcheng; Birkedal, Dan; Hvam, Jørn Märcher

2003-01-01

A vertically correlated submonolayer (VCSML) InAs/GaAs quantum-dot (QD) heterostructure was studied using transmission electron microscopy, high-resolution x-ray diffraction (HRXRD) and polarization-dependent photoluminescence. The HRXRD (004) rocking curve was simulated using the Tagaki-Taupin...

Migration of liquid film and grain boundary in Mo-Ni induced by W diffusion

International Nuclear Information System (INIS)

Kang, H.K.; Hackney, S.; Yoon, D.N.

1988-01-01

The liquid films and grain boundaries in liquid phase sintered Mo-Ni alloy are observed to migrate during heat-treatment after adding W to the liquid matrix. Behind the migrating boundaries forms Mo-Ni-W solid solution with the W concentration decreasing with the migration distance because of W depletion in the liquid matrix. The migration rate during the heat-treatment at 1540 0 C after adding W decreases with the decreasing pretreatment sintering temperature. When the sintering temperature is 1420 0 C, the migration rate is almost reduced to O. Under this condition, the coherency strain due to the simultaneous diffusion of W and Ni into the grain surfaces is estimated to be almost O. The results thus show that the coherency strain due to lattice diffusion is the driving force for the liquid film and grain boundary migration

TEM investigation of the topotactic reaction of (001) and (111) Ag films and Te

International Nuclear Information System (INIS)

Safran, G.; Geszti, O.; Radnoczi, G.

2002-01-01

The formation, structure and morphology of Ag 2 Te phase developed by the reaction of single crystalline Ag films with subsequently vacuum deposited Te vapour was investigated. Silver films 30-40 nm in thickness were deposited at 85-120 grad C by thermal evaporation in vacuum at a base pressure of 4x10 -5 mbar. The NaCl substrates were cleaved and saw-cut in order to achieve (001) and (111) surfaces, respectively. The surfaces were treated with water and chlorine prior to Ag deposition. This preparation resulted in single crystalline Ag films of (001) and (111) orientation. Tellurium was deposited onto the silver at a rate about 0.1 nm/s at 200 grad C i.e. above the temperature of the polymorphic phase transformation from monoclinic to fcc (T c =150 grad C). The Ag-Te reaction occurred during the Te deposition. The samples were investigated by TEM and SAED in a 200 kV Philips CM 20 electron microscope equipped with a Ge detector Noran EDS system. In the fully tellurized layers, however, the monoclinic (low temperature) Ag 2 Te phase was found. It exhibited large single crystals consisting of strictly oriented mosaic grains of 1-2 mm size. Surprisingly, the orientation of the telluride was identical (010) on both the (001) and (111) Ag parent films. It is suggested that the final orientation appears during the polymorphic phase transition while cooling to room temperature, regardless to Ag orientation, due to the lower surface energy of the (010) orientation of monoclinic phase nuclei. (Authors)

Epitaxial growth of ReS2(001) thin film via deposited-Re sulfurization

Science.gov (United States)

Urakami, Noriyuki; Okuda, Tetsuya; Hashimoto, Yoshio

2018-02-01

In this paper, we present the formation of large-size rhenium disulfide (ReS2) films via the sulfurization of Re films deposited on sapphire substrates. The effects of sulfurization temperature and pressure on the crystal quality were investigated. A [001]-oriented single crystal of ReS2 films with 6 × 10 mm2 area was realized. By sulfurizing Re films at 1100 °C, ReS2 films with well-defined sharp interfaces to c-plane sapphire substrates could be formed. Below and above the sulfurization temperature of 1100 °C, incomplete sulfurization and film degradation were observed. The twofold symmetry of the monocrystalline in-plane structure composed of Re-Re bonds along with Re-S bonds pointed to a distorted 1T structure, indicating that this structure is the most stable atomic arrangement for ReS2. For a S/Re compositional ratio equal to or slightly lower than 2.0, characteristic Raman vibrational modes with the narrowest line widths were observed. The typical absorption peak of ReS2 can be detected at 1.5 eV.

Epitaxial growth of tungsten layers on MgO(001)

Energy Technology Data Exchange (ETDEWEB)

Zheng, Pengyuan; Ozsdolay, Brian D.; Gall, Daniel, E-mail: galld@rpi.edu [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

2015-11-15

Smooth single crystal W(001) layers were grown on MgO(001) substrates by magnetron sputtering at 900 °C. X-ray diffraction ω–2θ scans, ω-rocking curves, pole figures, and reciprocal space maps indicate a 45°-rotated epitaxial relationship: (001){sub W}‖(001){sub MgO} and [010]{sub W}‖[110]{sub MgO}, and a relaxed lattice constant of 3.167 ± 0.001 nm. A residual in-plane biaxial compressive strain is primarily attributed to differential thermal contraction after growth and decreases from −0.012 ± 0.001 to −0.001 ± 0.001 with increasing layer thickness d = 4.8–390 nm, suggesting relaxation during cooling by misfit dislocation growth through threading dislocation glide. The in-plane x-ray coherence length increases from 3.4 to 33.6 nm for d = 4.8–390 nm, while the out-of-plane x-ray coherence length is identical to the layer thickness for d ≤ 20 nm, but is smaller than d for d ≥ 49.7 nm, indicating local strain variations along the film growth direction. X-ray reflectivity analyses indicate that the root-mean-square surface roughness increases from 0.50 ± 0.05 to 0.95 ± 0.05 nm for d = 4.8–19.9 nm, suggesting a roughness exponent of 0.38, but remains relatively constant for d > 20 nm with a roughness of 1.00 ± 0.05 nm at d = 47.9 nm.

Structural defects and epitaxial rotation of C-60 and C-70(111) films on GeS(001)

DEFF Research Database (Denmark)

Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.

1996-01-01

A transmission electron microscopy study of epitaxial C60 and C70 films grown on a GeS (001) surface is presented. The relationship between the orientation of the substrate and the films and structural defects in the films, such as grain boundaries, unknown in bulk C60 and C70 crystals, are studied...

Effect of carbon additive on microstructure evolution and magnetic properties of epitaxial FePt (001) thin films

International Nuclear Information System (INIS)

Ding, Y.F.; Chen, J.S.; Liu, E.; Lim, B.C.; Hu, J.F.; Liu, B.

2009-01-01

FePt:C thin films were deposited on CrRu underlayers by DC magnetron co-sputtering. The effects of C content, FePt:C film thickness and substrate temperature on the microstructural and magnetic properties of the epitaxial FePt (001) films were studied. Experimental results showed that even with 30 vol.% C doping, the FePt films could keep a (001) preferred orientation at 350 deg. C . When a FePt:C film was very thin (< 5 nm), the film had a continuous microstructure instead of a granual structure with C diffused onto the film surface. With further increased film thickness, the film started to nucleate and formed a column microstructure over continuous FePt films. A strong exchange coupling in the FePt:C films was believed to be due to the presence of a thin continuous FePt layer attributed to the carbon diffusion during the initial stage of the FePt:C film growth. Despite the presence of a strong exchange coupling in the FePt:C (20 vol.% C) film, the SNR ratio of the FePt:C media was about 10 dB better than that of the pure FePt media. The epitaxial growth of the FePt:C films on the Pt layers was observed from high resolution TEM cross sectional images even for the films grown at about 200 deg. C . The TEM images did not show an obvious change in the morphology of the FePt:C films deposited at different temperatures (from 200 deg. C to 350 deg. C ), though the ordering degree and coercivity of the films increased with increased substrate temperature

Chemical state and phase structure of (TaNbTiW)N films prepared by combined magnetron sputtering and PBII

Energy Technology Data Exchange (ETDEWEB)

Feng, Xingguo [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Tang, Guangze [National Key Laboratory of Materials Behavior and Evaluation in Space Environment, Harbin Institute of Technology, Harbin 150001 (China); Sun, Mingren [National Key Laboratory of Science and Technology on Precision Hot Processing of Metals Harbin Institute of Technology, Harbin Institute of Technology, Harbin 150001 (China); Ma, Xinxin, E-mail: maxin@hit.edu.cn [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Wang, Liqin [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin, 150001 (China)

2013-09-01

(TaNbTiW)N films with thickness of ∼1000 nm are prepared on titanium alloy substrate by combined magnetron sputtering deposition and nitrogen plasma based ion implantation (N-PBII). Chemical state of the elements and phase structure of the films are investigated using X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), respectively. The bonds of Ta-N, Nb-N, Ti-N-O and Ta-O are detected in the (TaNbTiW)N films, however both W-N and W-O are not found. The initial alloy film has a BCC structure, while the films with N-PBII treatment are composed of BCC and FCC structures. The hardness and elastic modulus of the films can be improved by increasing nitrogen implantation dose and reach maximum values of 9.0 GPa and 154.1 GPa, respectively.

Influences of W Content on the Phase Transformation Properties and the Associated Stress Change in Thin Film Substrate Combinations Studied by Fabrication and Characterization of Thin Film V1- xW xO2 Materials Libraries.

Science.gov (United States)

Wang, Xiao; Rogalla, Detlef; Ludwig, Alfred

2018-04-09

The mechanical stress change of VO 2 film substrate combinations during their reversible phase transformation makes them promising for applications in micro/nanoactuators. V 1- x W x O 2 thin film libraries were fabricated by reactive combinatorial cosputtering to investigate the effects of the addition of W on mechanical and other transformation properties. High-throughput characterization methods were used to systematically determine the composition spread, crystalline structure, surface topography, as well as the temperature-dependent phase transformation properties, that is, the hysteresis curves of the resistance and stress change. The study indicates that as x in V 1- x W x O 2 increases from 0.007 to 0.044 the crystalline structure gradually shifts from the VO 2 (M) phase to the VO 2 (R) phase. The transformation temperature decreases by 15 K/at. % and the resistance change is reduced to 1 order of magnitude, accompanied by a wider transition range and a narrower hysteresis with a minimal value of 1.8 K. A V 1- x W x O 2 library deposited on a Si 3 N 4 /SiO 2 -coated Si cantilever array wafer was used to study simultaneously the temperature-dependent stress change σ( T) of films with different W content through the phase transformation. Compared with σ( T) of ∼700 MPa of a VO 2 film, σ( T) in V 1- x W x O 2 films decreases to ∼250 MPa. Meanwhile, σ( T) becomes less abrupt and occurs over a wider temperature range with decreased transformation temperatures.

Effects of substrate anisotropy and edge diffusion on submonolayer growth during molecular beam epitaxy: A Kinetic Monte Carlo study

International Nuclear Information System (INIS)

Devkota, J.; Shrestha, S.P.

2007-12-01

We have performed Kinetic Monte Carlo simulation work to study the effect of diffusion anisotropy, bonding anisotropy and edge diffusion on island formation at different temperatures during the sub-monolayer film growth in Molecular Beam Epitaxy. We use simple cubic solid on solid model and event based Bortz, Kalos and Labowitch (BKL) algorithm on the Kinetic Monte Carlo method to simulate the physical phenomena. We have found that the island morphology and growth exponent are found to be influenced by substrate anisotropy as well as edge diffusion, however they do not play a significant role in island elongation. The growth exponent and island size distribution are observed to be influenced by substrate anisotropy but are negligibly influenced by edge diffusion. We have found fractal islands when edge diffusion is excluded and compact islands when edge diffusion is included. (author)

Submonolayer Quantum Dot Infrared Photodetector

Science.gov (United States)

Ting, David Z.; Bandara, Sumith V.; Gunapala, Sarath D.; Chang, Yia-Chang

2010-01-01

A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.

Impurity contamination effects on the interaction of Li and Sn Films on W (poly)

Science.gov (United States)

Fasoranti, Oluseyi; Koel, Bruce

2016-10-01

Plasma-solid interactions under fusion divertor conditions lead to continuous material erosion and may result in performance degradation of the plasma-facing components. Liquid metals such as Li and Sn may help to circumvent this issue due to their ability for self-recovery and heat-flux management. This has driven interest in understanding plasma-liquid metal interactions. We have shown in our lab that surface science experiments can examine discrete aspects of plasma-surface interactions by enabling clean and controlled deposition of metal films. We will review our recent results on the thermal stability of ultrathin Li and Sn films on a polycrystalline W surface using surface diagnostic methods such as Temperature Programmed Desorption, Auger Electron Spectroscopy, and Ion Scattering Spectroscopy. These studies examine Li-W and Sn-W interfaces and investigate the impact of impurities. We will discuss relevant issues such as the differences in oxygen uptake between solid and liquid lithium films and the effects of post-oxidation, as well as pre-adsorbed surface oxygen and carbon, on the thermal stability of these films. We plan to present additional studies of deuterium ion uptake and retention on Li and Sn films. Support was provided through U.S. Department of Energy, Office of Science/Fusion Energy Sciences under Award Number DE-SC0012890.

Epitaxial growth of Cu on Cu(001): Experiments and simulations

International Nuclear Information System (INIS)

Furman, Itay; Biham, Ofer; Zuo, Jiang-Kai; Swan, Anna K.; Wendelken, John

2000-01-01

A quantitative comparison between experimental and Monte Carlo simulation results for the epitaxial growth of Cu/Cu(001) in the submonolayer regime is presented. The simulations take into account a complete set of hopping processes whose activation energies are derived from semiempirical calculations using the embedded-atom method. The island separation is measured as a function of the incoming flux and the temperature. A good quantitative agreement between the experiment and simulation is found for the island separation, the activation energies for the dominant processes, and the exponents that characterize the growth. The simulation results are then analyzed at lower coverages, which are not accessible experimentally, providing good agreement with theoretical predictions as well

Preparation and characterization of micro-grid modified In_2O_3:W films

International Nuclear Information System (INIS)

Dong, Dongmei; Wang, Wenwen; Zhang, Fan; Fu, Qiang; Pan, Jiaojiao

2016-01-01

Tungsten doped indium oxide (In_2O_3:W, IWO) thin films with IWO micro-grid covered surface were prepared at room temperature using techniques of radio frequency (RF) magnetron sputtering and polystyrene (PS) microsphere template. The composition, crystallization structures, surface morphologies, and optical and electrical properties of the films were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy, spectrophotometer from visible to near infrared (NIR) range and Hall effect measurement, respectively. Periodic micro-grid modified surface was obtained to improve light trapping properties. The effects of the PS micro-spheres diameters and the sputtering time on the surface morphology, transmittance in NIR range, diffuse reflection and conductive properties of the IWO films are investigated. Experiments show that surface modification of the IWO film with micro-grid under the optimized condition can improve the conductivity of the films by 15%, and the diffuse reflectance by 150%, with less than 8% decrease of the transmittance in the visible region. The study would be beneficial to the light trapping effect of solar cells using IWO films as transparent electrodes. - Highlights: • In_2O_3:W (IWO) films were obtained by reactive frequency magnetron sputtering. • IWO micro-grids were prepared on the surface of IWO films. • Influences of micro-grid size and sputtering time on IWO films were analyzed. • Both high conductivity and transparency are acquired in near-infrared region.

Effect of tungsten (W) on structural and magnetic properties of electroplated NiFe thin films for MEMS applications

Science.gov (United States)

Kannan, R.; Devaki, P.; Premkumar, P. S.; Selvambikai, M.

2018-04-01

Electrodeposition of nanocrystalline NiFe and NiFeW thin films were carried out from ammonium citrate bath at a constant current density and controlled pH of 8 by varying the bath temperature from 40 °C to 70 °C. The surface morphology and chemical composition of the electrodeposited NiFe and NiFeW soft magnetic thin films were studied by using SEM and EDAX. The SEM micrographs of the films coated at higher electrodeposited bath temperature have no micro cracks and also the films have more uniform surface morphology. The existence of crystalline nature of the coated films were analysed by XRD. The presence of predominant peaks in x-ray diffraction pattern (compared with JCPDS data) reveal that the average crystalline size was in the order of few tens of nano meters. The magnetic properties such as coercivity, saturation magnetization and magnetic flux density have been calculated from vibrating sample magnetometer analysis. The VSM result shows that the NiFeW thin film synthesised at 70 °C exhibit the lower coercivity with higher saturation magnetization. The hardness and adhesion of the electroplated films have been investigated. Reasons for variation in magnetic properties and structural characteristics are also discussed. The electroplated NiFe and NiFeW thin films can be used for Micro Electro Mechanical System (MEMS) applications due to their excellent soft magnetic behaviour.

Citric acid induced W18O49 electrochromic films with enhanced optical modulation

Science.gov (United States)

Xie, Junliang; Song, Bin; Zhao, Gaoling; Han, Gaorong

2018-06-01

Electrochromic materials exhibit promising applications in energy-saving fields for their ability to control heat from outdoors. Nanostructured W18O49 has drawn attention for its one-dimensional structure to transfer charge efficiently as a remarkable electrochromic material. W18O49 bi-layer films were fabricated through a facile one-step solvothermal process with citric acid as a chelating agent. The addition of citric acid improved the deposition on the substance, and a nanostructured film with a denser layer at the bottom and a tussock-like upper layer was obtained. The bi-layer film exhibited an enhanced optical modulation of 68.7%, a coloration efficiency of 82.1 cm2/C with stability over 400 cycles, and fast response times (1.4 s and 2.3 s for bleaching and coloring), with expectation to be applied in the electrochromic field.

D. W. Griffith's Controversial Film, "The Birth of a Nation."

Science.gov (United States)

Pitcher, Conrad

1999-01-01

Presents a lesson plan that enables students to investigate race relations during the Progressive Era by analyzing D. W. Griffith's "The Birth of a Nation" and the controversy surrounding the release of the film. Explores the pros and cons of using motion pictures as teaching tool. Includes two student handouts. (CMK)

Optical properties of ZnTe epilayers with submonolayer planar narrow gap inclusions

Energy Technology Data Exchange (ETDEWEB)

Agekian, V. F.; Filosofov, N. G., E-mail: n.filosofov@spbu.ru; Serov, A. Yu. [St. Petersburg State University, Universitetskaya nab. 7 – 9, 199034 Si. Petersburg (Russian Federation); Shtrom, I. V. [St. Petersburg State University, Universitetskaya nab. 7 – 9, 199034 Si. Petersburg (Russian Federation); Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); St. Petersburg Academic University — Nanotechnology Research and Education Centre, Russian Academy of Sciences, Khlopina 8/3, 194021 St. Petersburg (Russian Federation); Karczewski, G. [Institute of Physics Polish Academy of Science, Ał. Lotnikov 32/46, 02-668 Warsaw (Poland)

2016-06-17

The exciton luminescence of ZnTe matrices with the embedded CdTe submonolayer inclusions is investigated. It is shown that the exciton localized by CdTe narrow gap component dominates in the emission spectrum. These localized excitons are coupled mainly with the phonons belonging to the cadmium enriched layers. The real distribution of cadmium in the direction of the heterostructure growth is determined from the energy position of the localized exciton emission bands.

Multiple delta doping of single crystal cubic boron nitride films heteroepitaxially grown on (001)diamonds

Science.gov (United States)

Yin, H.; Ziemann, P.

2014-06-01

Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 900 °C. The n-type doping of c-BN epitaxial films relies on the sequential growth of nominally undoped (p-) and Si doped (n-) layers with well-controlled thickness (down to several nanometer range) in the concept of multiple delta doping. The existence of nominally undoped c-BN overgrowth separates the Si doped layers, preventing Si dopant segregation that was observed for continuously doped epitaxial c-BN films. This strategy allows doping of c-BN films can be scaled up to multiple numbers of doped layers through atomic level control of the interface in the future electronic devices. Enhanced electronic transport properties with higher hall mobility (102 cm2/V s) have been demonstrated at room temperature as compared to the normally continuously Si doped c-BN films.

Boron doped bcc-W films: Achieving excellent mechanical properties and tribological performance by regulating substrate bias voltage

Science.gov (United States)

Yang, Lina; Zhang, Kan; Zeng, Yi; Wang, Xin; Du, Suxuan; Tao, Chuanying; Ren, Ping; Cui, Xiaoqiang; Wen, Mao

2017-11-01

Boron doped bcc-W (WBx, x = B/W) films were deposited on Si(100) substrates by magnetron co-sputtering pure W and B targets. Our results reveal that when the absolute value of substrate bias voltage (Vb) increases from floating to 240 V, the value of x monotonously decreases from 0.18 to 0.04, accompanied by a phase transition from a mixture of tetragonal γ-W2B and body-centered cubic α-W(B) phase (-Vb ≤ 60 V) to α-W(B) single phase (-Vb > 60 V). Hardness, depending on Vb, increases first and then drops, where the maximum hardness of 30.8 GPa was obtained at -Vb = 60 V and far higher than pure W and W2B theoretical value. In the mixed phase structure, the grain boundaries strengthening, Hall-Petch effect and solid-solution strengthening induced by B dominate the strengthening mechanism. Astonishingly, the film grown at -Vb = 120 V still possesses twice higher hardness than pure W, wherein unexpectedly low (6.7 at.%) B concentration and only the single α-W(B) phase can be identified. In this case, both Hall-Petch effect and solid-solution strengthening work. Besides, low friction coefficient of ∼0.18 can be obtained for the films with α-W(B) phase, which is competitive to that of reported B-rich transition-metal borides, such as TiB2, CrB and CrB2.

Order parameters and magnetocrystalline anisotropy of off-stoichiometric D0{sub 22} Mn{sub 2.36}Ga epitaxial films grown on MgO (001) and SrTiO{sub 3} (001)

Energy Technology Data Exchange (ETDEWEB)

Lee, Hwachol; Sukegawa, Hiroaki, E-mail: sukegawa.hiroaki@nims.go.jp; Mitani, Seiji; Hono, Kazuhiro [National Institute for Materials Science (NIMS), Sengen 1-2-1, Tsukuba, Ibaraki 305-0047 (Japan)

2015-07-21

We study the relationship between long range order parameters and the magnetocrystalline anisotropy of off-stoichiometric D0{sub 22} Mn{sub 2.36}Ga (MnGa) epitaxial films grown on MgO (001) and SrTiO{sub 3} (STO) (001) single crystalline substrates. MnGa films deposited on MgO (001) show rather large irregular variation in magnetization with increasing substrate temperature in spite of the improved long range order of total atomic sites. The specific site long range order of Mn-I site characterized in the [101] orientation revealed the fluctuation of the occupation fraction of two Mn atomic sites with elevated substrate temperature, which appears more relevant to the observed magnetization change than the long range order of the total atomic sites. In case of MnGa films grown on the lattice-matched STO (001), high long range order of the total atomic sites in spite of the existence of secondary phase represents that the lattice mismatch plays a crucial role in determining the atomic arrangement of Mn and Ga atoms in the off-stoichiometric compositional case of MnGa.

Fine control of the amount of preferential <001> orientation in DC magnetron sputtered nanocrystalline TiO2 films

International Nuclear Information System (INIS)

Stefanov, B; Granqvist, C G; Österlund, L

2014-01-01

Different crystal facets of anatase TiO 2 are known to have different chemical reactivity; in particular the {001} facets which truncates the bi-tetrahedral anatase morphology are reported to be more reactive than the usually dominant {101} facets. Anatase TiO 2 thin films were deposited by reactive DC magnetron sputtering in Ar/O 2 atmosphere and were characterized using Rietveld refined grazing incidence X-ray diffraction, atomic force microscopy and UV/Vis spectroscopy. By varying the partial O2 pressure in the deposition chamber, the degree of orientation of the grains in the film could be systematically varied with preferred <001> orientation changing from random upto 39% as determined by March-Dollase method. The orientation of the films is shown to correlate with their reactivity, as measured by photo-degradation of methylene blue in water solutions. The results have implications for fabrication of purposefully chemically reactive thin TiO 2 films prepared by sputtering methods

Structure and electronic properties of Zn-tetra-phenyl-porphyrin single- and multi-layers films grown on Fe(001)-p(1 × 1)O

Energy Technology Data Exchange (ETDEWEB)

Bussetti, Gianlorenzo, E-mail: gianlorenzo.bussetti@polimi.it; Calloni, Alberto; Celeri, Matteo; Yivlialin, Rossella; Finazzi, Marco; Bottegoni, Federico; Duò, Lamberto; Ciccacci, Franco

2016-12-30

Highlights: • ZnTPP/Fe(001)-p(1 × 1)O is a prototypical system to investigate the porphyrin/thin metal oxide film interaction. • Oxygen layer plays a crucial role in decreasing the porphyrin-substrate interaction. • An ordered ZnTPP (5 × 5) reconstruction is found on the nominal 1 ML-thick film. • On Fe(001)-p(1 × 1)O the electronic properties of the ZnTPP film are preserved with respect to other substrates. - Abstract: The structure and the electronic properties of thin (1 molecular layer) and thick (20 molecular layers) Zn-tetra-phenyl-porphyrin (ZnTPP) films grown on a single metal oxide (MO) layer, namely Fe(001)-p(1 × 1)O, are shown and discussed. During the first stages of deposition, the ultra-thin MO layer reduces the molecule-substrate interaction enhancing the molecular diffusivity with the respect to other investigated substrates [namely, Si(111), Au(001) and oxygen-free Fe(001)]. On Fe(001)-p(1 × 1)O, ZnTPP molecules form an ordered and stable square-lattice array. The photoemission analysis of the valence bands reveals that all the characteristic features of the molecule are already visible in the 1 monolayer-thick sample spectrum. Similarly, the core level investigation suggests a weak molecule perturbation. The ZnTPP/Fe(001)-p(1 × 1)O interface represents a prototypical system to investigate the organic film adhesion on ultra-thin MO layers and the processes involved during the film growth.

Multi-scale characterization of surface blistering morphology of helium irradiated W thin films

International Nuclear Information System (INIS)

Yang, J.J.; Zhu, H.L.; Wan, Q.; Peng, M.J.; Ran, G.; Tang, J.; Yang, Y.Y.; Liao, J.L.; Liu, N.

2015-01-01

Highlights: • Multi-scale blistering morphology of He irradiated W film was studied. • This complex morphology was first characterized by wavelet transform approach. - Abstract: Surface blistering morphologies of W thin films irradiated by 30 keV He ion beam were studied quantitatively. It was found that the blistering morphology strongly depends on He fluence. For lower He fluence, the accumulation and growth of He bubbles induce the intrinsic surface blisters with mono-modal size distribution feature. When the He fluence is higher, the film surface morphology exhibits a multi-scale property, including two kinds of surface blisters with different characteristic sizes. In addition to the intrinsic He blisters, film/substrate interface delamination also induces large-sized surface blisters. A strategy based on wavelet transform approach was proposed to distinguish and extract the multi-scale surface blistering morphologies. Then the density, the lateral size and the height of these different blisters were estimated quantitatively, and the effect of He fluence on these geometrical parameters was investigated. Our method could provide a potential tool to describe the irradiation induced surface damage morphology with a multi-scale property

The dynamics of physisorbed layers studied by neutron scattering

International Nuclear Information System (INIS)

Nielsen, M.; McTague, J.P.

1978-01-01

We discuss the neutron scattering technique applied to the study of adsorbed thin films. Despite the fact that neutrons are scattered very weakly by surfaces, recent studies have shown that both structural and dynamical information can be obtained even for submonolayer coverages. Results will be shown for films of Ar, D 2 , H 2 , and O 2 adsorbed on (001) surfaces of graphite and for H 2 molecules adsorbed on activated alumina. (orig.) [de

Growth and structure of L1 sub 0 ordered FePt films on GaAs(001)

CERN Document Server

Nefedov, A; Theis-Broehl, K; Zabel, H; Doi, M; Schuster, E; Keune, W

2002-01-01

The structural properties of epitaxial L1 sub 0 ordered FePt(001) films, grown by molecular beam epitaxy (alternating deposition of Fe and Pt atomic layers) on buffer-Pt/seed-Fe/GaAs(001) have been studied by in situ reflection high-energy electron diffraction and by ex situ x-ray scattering as a function of the growth conditions. Reflection high-energy electron diffraction intensity oscillations measured during FePt layer growth provide evidence for island growth at T sub s = 200 deg. C and quasi layer-by-layer growth at T sub s = 350 deg. C. From small-angle and wide-angle x-ray scattering it was found that the degree of epitaxy depends critically on morphology of the seed layer and the substrate roughness. X-ray diffraction analysis showed that the long-range order parameter increases from near zero for films grown at 200 deg. C to 0.65 for films grown at 350 deg. C. This confirms the fact that the order parameter is mainly determined by the surface mobility of the atoms which is controlled experimentally ...

Highly (001) oriented L1{sub 0}-CoPt/TiN multilayer films on glass substrates with perpendicular magnetic anisotropy

Energy Technology Data Exchange (ETDEWEB)

An, Hongyu; Sannomiya, Takumi; Muraishi, Shinji; Nakamura, Yoshio; Shi, Ji, E-mail: shi.j.aa@m.titech.ac.jp [Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8552 (Japan); Xie, Qian; Zhang, Zhengjun [Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Wang, Jian [National Institute for Materials Science (NIMS), Sengen 1-2-1, Tsukuba, Ibaraki 305-0047 (Japan)

2015-03-15

To obtain strong perpendicular magnetic anisotropy (PMA) based on L1{sub 0} structure for magnetic storage devices, costly single crystalline substrates are generally required to achieve (001) texture. Recently, various studies also have focused on depositing different kinds of seed layers on glass or other amorphous substrates to promote (001) preferred orientation of L1{sub 0} CoPt and FePt. TiN is a very promising seed layer material because of its cubic crystalline structure (similar to MgO) and excellent diffusion barring property even at high temperatures. In the present work, highly (001) oriented L1{sub 0}-CoPt/TiN multilayer films have been successfully deposited on glass substrates. After annealing at 700 °C, the film exhibits PMA, and a strong (001) peak is detected from the x-ray diffraction profiles, indicating the ordering transformation of CoPt layers from fcc (A1) to L1{sub 0} structure. It also is found that alternate deposition of cubic TiN and CoPt effectively improves the crystallinity and (001) preferred orientation of CoPt layers. This effect is verified by the substantial enhancement of (001) reflection and PMA with increasing the period number of the multilayer films.

Solid-state dewetting of single- and bilayer Au-W thin films: Unraveling the role of individual layer thickness, stacking sequence and oxidation on morphology evolution

Directory of Open Access Journals (Sweden)

A. Herz

2016-03-01

Full Text Available Self-assembly of ultrathin Au, W, and Au-W bilayer thin films is investigated using a rapid thermal annealing technique in an inert ambient. The solid-state dewetting of Au films is briefly revisited in order to emphasize the role of initial film thickness. W films deposited onto SiO2 evolve into needle-like nanocrystals rather than forming particle-like agglomerates upon annealing at elevated temperatures. Transmission electron microscopy reveals that such nanocrystals actually consist of tungsten (VI oxide (WO3 which is related to an anisotropic oxide crystal growth out of the thin film. The evolution of W films is highly sensitive to the presence of any residual oxygen. Combination of both the dewetting of Au and the oxide crystal growth of WO3 is realized by using various bilayer film configurations of the immiscible Au and W. At low temperature, Au dewetting is initiated while oxide crystal growth is still suppressed. Depending on the stacking sequence of the Au-W bilayer thin film, W acts either as a substrate or as a passivation layer for the dewetting of Au. Being the ground layer, W changes the wettability of Au which clearly modifies its initial state for the dewetting. Being the top layer, W prevents Au from dewetting regardless of Au film thickness. Moreover, regular pattern formation of Au-WO3 nanoparticles is observed at high temperature demonstrating how bilayer thin film dewetting can create unique nanostructure arrangements.

Solid-state dewetting of single- and bilayer Au-W thin films: Unraveling the role of individual layer thickness, stacking sequence and oxidation on morphology evolution

Energy Technology Data Exchange (ETDEWEB)

Herz, A., E-mail: andreas.herz@tu-ilmenau.de, E-mail: dong.wang@tu-ilmenau.de; Franz, A.; Theska, F.; Hentschel, M.; Kups, Th.; Wang, D., E-mail: andreas.herz@tu-ilmenau.de, E-mail: dong.wang@tu-ilmenau.de; Schaaf, P. [Department of Materials for Electronics and Electrical Engineering, Institute of Materials Science and Engineering and Institute of Micro- and Nanotechnologies MacroNano, TU Ilmenau, D-98693 Ilmenau (Germany)

2016-03-15

Self-assembly of ultrathin Au, W, and Au-W bilayer thin films is investigated using a rapid thermal annealing technique in an inert ambient. The solid-state dewetting of Au films is briefly revisited in order to emphasize the role of initial film thickness. W films deposited onto SiO{sub 2} evolve into needle-like nanocrystals rather than forming particle-like agglomerates upon annealing at elevated temperatures. Transmission electron microscopy reveals that such nanocrystals actually consist of tungsten (VI) oxide (WO{sub 3}) which is related to an anisotropic oxide crystal growth out of the thin film. The evolution of W films is highly sensitive to the presence of any residual oxygen. Combination of both the dewetting of Au and the oxide crystal growth of WO{sub 3} is realized by using various bilayer film configurations of the immiscible Au and W. At low temperature, Au dewetting is initiated while oxide crystal growth is still suppressed. Depending on the stacking sequence of the Au-W bilayer thin film, W acts either as a substrate or as a passivation layer for the dewetting of Au. Being the ground layer, W changes the wettability of Au which clearly modifies its initial state for the dewetting. Being the top layer, W prevents Au from dewetting regardless of Au film thickness. Moreover, regular pattern formation of Au-WO{sub 3} nanoparticles is observed at high temperature demonstrating how bilayer thin film dewetting can create unique nanostructure arrangements.

The study of geometric structure of Na films on Cu(110)

International Nuclear Information System (INIS)

Zeybek, O.

2004-01-01

In order to understand the geometric structure of Na films on Cu( 110) substrate, a couple of surface science techniques have been applied in this study. The thickness of the Na films were calculated using X-ray Photoelectron Spectroscopy data and Mean Free Path. The coverages were compared with the work function changes in this study and other investigations. Sub-monolayer and up to 2 ML thickness of Na films on Cu(110) have been investigated using Low Energy Electron Diffraction (LEED) and Ultra Violet Inverse Photoelectron Spectroscopy. It is found that the (1 x 1) LEED pattern of Cu(110) changes to (1 x 2) with increasing Na coverage up to 1 ML. Af ter 1 ML Na films, LEED shows again (1 x 1) structure

Ab-initio study of the interfacial properties in ultrathin MgO films on O-rich FeO/Fe(001) surfaces

Energy Technology Data Exchange (ETDEWEB)

Jeon, Junjin; Yu, Byungdeok [University of Seoul, Seoul (Korea, Republic of)

2014-09-15

Using ab-initio simulations based on density functional theory, we systematically studied the interfacial properties of MgO films on O-rich FeO/Fe(001) surfaces with increasing number of MgO layers from one to three monolayers (MLs). The structural and the adhesion properties of the MgO/FeO/Fe(001) system were assessed and compared with those of simple MgO/Fe(001) interfaces. Our calculated results showed that the adhesion energy for MgO/FeO/Fe(001) was smaller than that for simple MgO/Fe(001). An analysis of the electronic structures and the charge rearrangements of the MgO/FeO/Fe(001) interfaces was also performed. The work functions of the MgO/FeO/Fe(001) systems upon the deposition of MgO films exhibited smaller decreases (0.45 - 0.67 eV) than those (1.43 - 1.74 eV) of the MgO/Fe(001) systems. In addition, the obtained work functions (3.77 - 3.99 eV) for MgO/FeO/Fe(001) were much larger than those (2.12 - 2.43 eV) for MgO/Fe(001).

Preparation and characterization of micro-grid modified In{sub 2}O{sub 3}:W films

Energy Technology Data Exchange (ETDEWEB)

Dong, Dongmei; Wang, Wenwen, E-mail: 08569@buaa.edu.cn; Zhang, Fan; Fu, Qiang; Pan, Jiaojiao

2016-08-01

Tungsten doped indium oxide (In{sub 2}O{sub 3}:W, IWO) thin films with IWO micro-grid covered surface were prepared at room temperature using techniques of radio frequency (RF) magnetron sputtering and polystyrene (PS) microsphere template. The composition, crystallization structures, surface morphologies, and optical and electrical properties of the films were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy, spectrophotometer from visible to near infrared (NIR) range and Hall effect measurement, respectively. Periodic micro-grid modified surface was obtained to improve light trapping properties. The effects of the PS micro-spheres diameters and the sputtering time on the surface morphology, transmittance in NIR range, diffuse reflection and conductive properties of the IWO films are investigated. Experiments show that surface modification of the IWO film with micro-grid under the optimized condition can improve the conductivity of the films by 15%, and the diffuse reflectance by 150%, with less than 8% decrease of the transmittance in the visible region. The study would be beneficial to the light trapping effect of solar cells using IWO films as transparent electrodes. - Highlights: • In{sub 2}O{sub 3}:W (IWO) films were obtained by reactive frequency magnetron sputtering. • IWO micro-grids were prepared on the surface of IWO films. • Influences of micro-grid size and sputtering time on IWO films were analyzed. • Both high conductivity and transparency are acquired in near-infrared region.

The growth of noble metals in (112-bar0)-oriented hexagonal close-packed nano-films by epitaxy on Nb(001)

International Nuclear Information System (INIS)

Hueger, E.; Osuch, K.

2005-01-01

The morphology and crystal structure of noble metal nano-films deposited on oxygen contaminated and oxygen-free Nb(001) surfaces have been studied with angle-resolved ultraviolet photoelectron spectroscopy, X-ray photo-electron diffraction, and reflection high energy electron diffraction. In the both cases a deposited noble metal film aligns its direction with the [110] direction of the Nb(001) surface. But, while a noble metal grows on an oxygen contaminated Nb(001) surface with the hexagonal close-packed (hcp) (111) planes parallel to the surface (i.e. in the (111)-oriented face centred cubic phase (fcc)), on a non-contaminated Nb(001) it grows with its hcp planes perpendicular to the surface. The latter happens because in the initial stages of the epitaxy the first two monolayers (MLs) of the noble metal grow pseudomorphically on a contamination-free Nb(001). The pseudomorphic layer is strongly extended parallel to the Nb(001) surface in comparison to its natural fcc (001) plane. As a consequence of the atomic volume conservation principle the out-of-plane lattice of the pseudomorphic layer is contracted. Thus, its body centred tetragonal (110) planes, which stay perpendicular to the surface, contract into denser-packed planes, i.e. in hcp ones. In the direction perpendicular to the surface, where the substrate does not have a direct influence on the film, the pseudomorphic layer relaxes into its natural close-packed phase, i.e. into hcp atomic planes. These planes appear as soon as the third pseudomorphic ML begins to grow. The stacking axis of the planes lies in the (100) surface of Nb and is locked by it. The fact that thick nano-films of Cu (up to 50 MLs), Ag and Au (up to 100 MLs) grow in the (112-bar0)-oriented hcp phase can be attributed to a much better fit of the hcp than of fcc stacking sequence to the four-fold symmetry of the Nb(001) surface

Enhanced catalytic activity of the nanostructured Co-W-B film catalysts for hydrogen evolution from the hydrolysis of ammonia borane.

Science.gov (United States)

Li, Chao; Wang, Dan; Wang, Yan; Li, Guode; Hu, Guijuan; Wu, Shiwei; Cao, Zhongqiu; Zhang, Ke

2018-08-15

In this work, nanostructured Co-W-B films are successfully synthesized on the foam sponge by electroless plating method and employed as the catalysts with enhanced catalytic activity towards hydrogen evolution from the hydrolysis of ammonia borane (NH 3 BH 3 , AB) at room temperature. The particle size of the as-prepared Co-W-B film catalysts is varied by adjusting the depositional pH value to identify the most suitable particle size for hydrogen evolution of AB hydrolysis. The Co-W-B film catalyst with the particle size of about 67.3 nm shows the highest catalytic activity and can reach a hydrogen generation rate of 3327.7 mL min -1 g cat -1 at 298 K. The activation energy of the hydrolysis reaction of AB is determined to be 32.2 kJ mol -1 . Remarkably, the as-obtained Co-W-B film is also a reusable catalyst preserving 78.4% of their initial catalytic activity even after 5 cycles in hydrolysis of AB at room temperature. Thus, the enhanced catalytic activity illustrates that the Co-W-B film is a promising catalyst for AB hydrolytic dehydrogenation in fuel cells and the related fields. Copyright © 2018 Elsevier Inc. All rights reserved.

Piezoelectric characterization of Sc0.26Al0.74N layers on Si (001) substrates

Science.gov (United States)

Sinusía Lozano, M.; Pérez-Campos, A.; Reusch, M.; Kirste, L.; Fuchs, Th; Žukauskaitė, A.; Chen, Z.; Iriarte, G. F.

2018-03-01

Scandium aluminum nitride (ScAlN) films have been synthesized by pulsed-DC reactive magnetron sputtering. The degree of c-axis orientation as well as piezoelectric characteristics of the Sc0.26Al0.74N thin films grown on Si (001) at various discharge powers and processing pressures values have been investigated. According to x-ray diffraction (XRD) measurements, the texture of the as-grown Sc0.26Al0.74N thin films becomes more prominent in the [0001]-direction at the highest target power (700 W) and at the lowest processing pressure (4 mTorr). The piezoelectric response, as determined by measuring the d33 piezoelectric constant, shows a maximum value of -12 pC/N also at 4 mTorr and 700 W, confirming a direct correlation between the d33 piezoelectric constant and the degree of orientation in the [0001]-direction. The atomic concentration of Sc and Al in the synthesized ScAlN thin film, determined by secondary ion mass spectroscopy (SIMS), reveals a Sc concentration lower than in the ScAl alloy target. The piezoresponse force microscopy (PFM) shows homogeneous polarity distribution with no inversion domains. The piezoelectric layers have been used to fabricate and measure surface acoustic wave (SAW) resonators on a Sc0.26Al0.74N/Si (001) bilayer system with resonance frequency of 1.4 GHz and coupling coefficient of 0.567. Such characteristic in the frequency response reveals the potential of these materials for advanced SAW devices in applications such as next generation (5 G) wireless communication systems.

Ferroelectric and piezoelectric responses of (110) and (001)-oriented epitaxial Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} thin films on all-oxide layers buffered silicon

Energy Technology Data Exchange (ETDEWEB)

Vu, Hien Thu [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No.1 Dai Co Viet Road, Hanoi 10000 (Viet Nam); Nguyen, Minh Duc, E-mail: minh.nguyen@itims.edu.vn [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No.1 Dai Co Viet Road, Hanoi 10000 (Viet Nam); Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); SolMateS B.V., Drienerlolaan 5, Building 6, 7522 NB Enschede (Netherlands); Houwman, Evert; Boota, Muhammad [Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Dekkers, Matthijn [SolMateS B.V., Drienerlolaan 5, Building 6, 7522 NB Enschede (Netherlands); Vu, Hung Ngoc [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No.1 Dai Co Viet Road, Hanoi 10000 (Viet Nam); Rijnders, Guus [Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

2015-12-15

Graphical abstract: The cross sections show a very dense structure in the (001)-oriented films (c,d), while an open columnar growth structure is observed in the case of the (110)-oriented films (a,b). The (110)-oriented PZT films show a significantly larger longitudinal piezoelectric coefficient (d33{sub ,f}), but smaller transverse piezoelectric coefficient (d31{sub ,f}) than the (001) oriented films. - Highlights: • We fabricate all-oxide, epitaxial piezoelectric PZT thin films on Si. • The orientation of the films can be controlled by changing the buffer layer stack. • The coherence of the in-plane orientation of the grains and grain boundaries affects the ferroelectric properties. • Good cycling stability of the ferroelectric properties of (001)-oriented PZT thin films. The (110)-oriented PZT thin films show a larger d33{sub ,f} but smaller d31{sub ,f} than the (001)-oriented films. - Abstract: Epitaxial ferroelectric Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films were fabricated on silicon substrates using pulsed laser deposition. Depending on the buffer layers and perovskite oxide electrodes, epitaxial films with different orientations were grown. (110)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) films were obtained on YSZ-buffered Si substrates, while (001)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) were fabricated with an extra CeO{sub 2} buffer layer (CeO{sub 2}/YSZ/Si). There is no effect of the electrode material on the properties of the films. The initial remnant polarizations in the (001)-oriented films are higher than those of (110)-oriented films, but it increases to the value of the (001) films upon cycling. The longitudinal piezoelectric d33{sub ,f} coefficients of the (110) films are larger than those of the (001) films, whereas the transverse piezoelectric d31{sub ,f} coefficients in the (110)-films are less than those in the (001)-oriented films. The difference is ascribed to the lower density (connectivity between

Wet-etching induced abnormal phase transition in highly strained VO{sub 2}/TiO{sub 2} (001) epitaxial film

Energy Technology Data Exchange (ETDEWEB)

Ren, Hui; Chen, Shi; Chen, Yuliang; Luo, Zhenlin; Zhou, Jingtian; Zheng, Xusheng; Wang, Liangxin; Li, Bowen; Zou, Chongwen [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei (China)

2018-01-15

The metal-insulator transition (MIT) behavior in vanadium dioxide (VO{sub 2}) epitaxial film is known to be dramatically affected by interfacial stress due to lattice mismatching. For the VO{sub 2}/TiO{sub 2} (001) system, there exists a considerable strain in ultra-thin VO{sub 2} thin film, which shows a lower T{sub c} value close to room temperature. As the VO{sub 2} epitaxial film grows thicker layer-by-layer along the ''bottom-up'' route, the strain will be gradually relaxed and T{sub c} will increase as well, until the MIT behavior becomes the same as that of bulk material with a T{sub c} of about 68 C. Whereas, in this study, we find that the VO{sub 2}/TiO{sub 2} (001) film thinned by ''top-down'' wet-etching shows an abnormal variation in MIT, which accompanies the potential relaxation of film strain with thinning. It is observed that even when the strained VO{sub 2} film is etched up to several nanometers, the MIT persists, and T{sub c} will increase up to that of bulk material, showing the trend to a stress-free ultra-thin VO{sub 2} film. The current findings demonstrate a facial chemical-etching way to change interfacial strain and modulate the phase transition behavior of ultrathinVO{sub 2} films, which can also be applied to other strained oxide films. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Enhanced Materials Based on Submonolayer Type-II Quantum Dots

Energy Technology Data Exchange (ETDEWEB)

Tamargo, Maria C [City College of New York, NY (United States); Kuskovsky, Igor L. [City Univ. (CUNY), NY (United States) Queens College; Meriles, Carlos [City College of New York, NY (United States); Noyan, Ismail C. [Columbia Univ., New York, NY (United States)

2017-04-15

We have investigated a nanostructured material known as sub-monolayer type-II QDs, made from wide bandgap II-VI semiconductors. Our goal is to understand and exploit their tunable optical and electrical properties by taking advantage of the type-II band alignment and quantum confinement effects. Type-II ZnTe quantum dots (QDs) in a ZnSe host are particularly interesting because of their relatively large valence band and conduction band offsets. In the current award we have developed new materials based on sub-monolayer type-II QDs that may be advantageous for photovoltaic and spintronics applications. We have also expanded the structural characterization of these materials by refining the X-ray diffraction methodologies needed to investigate them. In particular, we have 1) demonstrated ZnCdTe/ZnCdSe type-II QDs materials that have ideal properties for the development of novel high efficiency “intermediate band solar cells”, 2) we developed a comprehensive approach to describe and model the growth of these ultra-small type-II QDs, 3) analysis of the evolution of the photoluminescence (PL) emission, combined with other characterization probes allowed us to predict the size and density of the QDs as a function of the growth conditions, 4) we developed and implemented novel sophisticated X-ray diffraction techniques from which accurate size and shape of the buried type-II QDs could be extracted, 5) a correlation of the shape anisotropy with polarization dependent PL was observed, confirming the QDs detailed shape and providing insight about the effects of this shape anisotropy on the physical properties of the type-II QD systems, and 6) a detailed “time-resolved Kerr rotation” investigation has led to the demonstration of enhanced electron spin lifetimes for the samples with large densities of type-II QDs and an understanding of the interplay between the QDs and Te-isoelectroic centers, a defect that forms in the spacer layers that separate the QDs.

Magnetic surface domain imaging of uncapped epitaxial FeRh(001) thin films across the temperature-induced metamagnetic transition

Energy Technology Data Exchange (ETDEWEB)

Zhou, Xianzhong; Matthes, Frank; Bürgler, Daniel E., E-mail: d.buergler@fz-juelich.de; Schneider, Claus M. [Peter Grünberg Institut, Electronic Properties (PGI-6) and Jülich-Aachen Research Alliance, Fundamentals of Future Information Technology (JARA-FIT), Forschungszentrum Jülich, D-52425 Jülich (Germany)

2016-01-15

The surface magnetic domain structure of uncapped epitaxial FeRh/MgO(001) thin films was imaged by in-situ scanning electron microscopy with polarization analysis (SEMPA) at various temperatures between 122 and 450 K. This temperature range covers the temperature-driven antiferromagnetic-to-ferromagnetic phase transition in the body of the films that was observed in-situ by means of the more depth-sensitive magneto-optical Kerr effect. The SEMPA images confirm that the interfacial ferromagnetism coexisting with the antiferromagnetic phase inside the film is an intrinsic property of the FeRh(001) surface. Furthermore, the SEMPA data display a reduction of the in-plane magnetization occuring well above the phase transition temperature which, thus, is not related to the volume expansion at the phase transition. This observation is interpreted as a spin reorientation of the surface magnetization for which we propose a possible mechanism based on temperature-dependent tetragonal distortion due to different thermal expansion coefficients of MgO and FeRh.

Boosting the performance of Pt electro-catalysts toward formic acid electro-oxidation by depositing sub-monolayer Au clusters

International Nuclear Information System (INIS)

Bi Xuanxuan; Wang Rongyue; Ding Yi

2011-01-01

Highlights: → Au decoration on Pt nanoparticles simultaneously increases the activity and stability. → Sub-monolayer Au decoration changes the reaction path and results in the activity improvement. → Increasing the Au coverage will increase the specific activity. → Proper Au coverage results in a maximum mass specific activity. - Abstract: CO poisoning is the main obstacle to the application of Pt nanoparticles as anode catalysts in direct formic acid fuel cells (DFAFCs). Significant types of Pt alloys have been investigated, which often demonstrate evidently improved catalytic performance governed by difference mechanisms. By using a well-known electrochemical technique of under potential deposition and in situ redox replacement, sub-monolayer Au clusters are deposited onto Pt nanoparticle surfaces in a highly controlled manner, generating a unique surface alloy structure. Under optimum conditions, the modified Pt nanoparticles can exhibit greatly enhanced specific activity (up to 23-fold increase) at potential of -0.2 V vs. MSE toward formic acid electro-oxidation (FAEO). Interestingly, the mass specific activity can also be improved by a factor of 2.3 at potential of -0.35 V vs. MSE although significant amount of surface Pt atoms are covered by the overlayer Au clusters. The much enhanced catalytic activity can be ascribed to a Pt surface ensemble effect, which induces change of the reaction path. Moreover, the sub-monolayer Au coating on the surface also contributes to the enhanced catalyst durability by inhibiting the Pt oxidation. These results show great potential to rationally design more active and stable nanocatalysts by modifying the Pt surface with otherwise inactive materials.

Fermi surface and quantum well states of V(110) films on W(110)

International Nuclear Information System (INIS)

Krupin, Oleg; Rotenberg, Eli; Kevan, S D

2007-01-01

Using angle-resolved photoemission spectroscopy, we have measured the Fermi surface of V(110) films epitaxially grown on a W(110) substrate. We compare our results for thicker films to existing calculations and measurements for bulk vanadium and find generally very good agreement. For thinner films, we observe and analyse a diverse array of quantum well states that split and distort the Fermi surface segments. We have searched unsuccessfully for a thickness-induced topological transition associated with contact between the zone-centre jungle gym and zone-boundary hole ellipsoid Fermi surface segments. We also find no evidence for ferromagnetic splitting of any bands on this surface

Fermi surface and quantum well states of V(110) films on W(110)

Energy Technology Data Exchange (ETDEWEB)

Krupin, Oleg [MS 6-2100, Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Rotenberg, Eli [MS 6-2100, Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Kevan, S D [Department of Physics, University of Oregon, Eugene, OR 97403 (United States)

2007-09-05

Using angle-resolved photoemission spectroscopy, we have measured the Fermi surface of V(110) films epitaxially grown on a W(110) substrate. We compare our results for thicker films to existing calculations and measurements for bulk vanadium and find generally very good agreement. For thinner films, we observe and analyse a diverse array of quantum well states that split and distort the Fermi surface segments. We have searched unsuccessfully for a thickness-induced topological transition associated with contact between the zone-centre jungle gym and zone-boundary hole ellipsoid Fermi surface segments. We also find no evidence for ferromagnetic splitting of any bands on this surface.

Effect of La and W dopants on dielectric and ferroelectric properties of PZT thin films prepared by sol-gel process

International Nuclear Information System (INIS)

Xiao, Mi; Zhang, Zebin; Zhang, Weikang; Zhang, Ping

2018-01-01

La or W-doped lead zirconate titanate thin films (PLZT or PZTW) were prepared on platinized silicon substrates by sol-gel process. The effects of La or W dopant on the phase development, microstructure, dielectric and ferroelectric characteristics of films were studied. For PLZT films, the optimum doping concentration was found to be 2 mol%. While for PZTW films, the dielectric and ferroelectric properties were found to be improved as the doping concentration increased. The fatigue properties of PLZT and PZTW thin films were also investigated, the results showed that A- or B-site donor doping could improve the fatigue properties of PZT thin films. The theory of oxygen vacancy was used to explain the performance improvement caused by donor doping. (orig.)

Effect of La and W dopants on dielectric and ferroelectric properties of PZT thin films prepared by sol-gel process

Science.gov (United States)

Xiao, Mi; Zhang, Zebin; Zhang, Weikang; Zhang, Ping

2018-01-01

La or W-doped lead zirconate titanate thin films (PLZT or PZTW) were prepared on platinized silicon substrates by sol-gel process. The effects of La or W dopant on the phase development, microstructure, dielectric and ferroelectric characteristics of films were studied. For PLZT films, the optimum doping concentration was found to be 2 mol%. While for PZTW films, the dielectric and ferroelectric properties were found to be improved as the doping concentration increased. The fatigue properties of PLZT and PZTW thin films were also investigated, the results showed that A- or B-site donor doping could improve the fatigue properties of PZT thin films. The theory of oxygen vacancy was used to explain the performance improvement caused by donor doping.

Surface structural reconstruction of SrVO3 thin films on SrTiO3 (001)

Science.gov (United States)

Wang, Gaomin; Saghayezhian, Mohammad; Chen, Lina; Guo, Hangwen; Zhang, Jiandi

Paramagnetic metallic oxide SrVO3>(SVO) is an itinerant system known to undergo thickness-induced metal-insulator-transition (MIT) in ultrathin film form, which makes it a prototype system for the study of the mechanism behind metal-insulator-transition like structure distortion, electron correlations and disorder-induced localization. We have grown SrVO3 thin film with atomically flat surface through the layer-by-layer deposition by laser Molecular Beam Epitaxy (laser-MBE) on SrTiO3 (001) surface. Low Energy Electron Diffraction (LEED) measurements reveal that there is a (√2X √2) R45°surface reconstruction independent of film thickness. By using LEED-I(V) structure refinement, we determine the surface structure. In combination with X-ray Photoelectron Spectroscopy (XPS) and Scanning Tunneling Microscopy (STM), we discuss the implication on the MIT in ultrathin films below 2-3 unit cell thickness. This work is supported by the National Science Foundation under the NSF EPSCoR Cooperative Agreement No. EPS-1003897 with additional support from the Louisiana Board of Regents.

InAs/InP quantum dots emitting in the 1.55 μm wavelength region by inserting submonolayer GaP interlayers

International Nuclear Information System (INIS)

Gong, Q.; Noetzel, R.; Veldhoven, P.J. van; Eijkemans, T.J.; Wolter, J.H.

2004-01-01

We report on the growth of InAs quantum dots (QDs) in GaInAsP on InP (100) substrates by chemical-beam epitaxy, with emission wavelength in the 1.55 μm region. Submonolayer coverage of GaP on the GaInAsP buffer before deposition of the InAs QDs results in most efficient suppression of As/P exchange during InAs growth and subsequent growth interruption under arsenic flux. Continuous wavelength tuning from above 1.6 to below 1.5 μm is thus achieved by varying the coverage of the GaP interlayer within the submonolayer range. Temperature dependent photoluminescence reveals distinct zero-dimensional carrier confinement and indicates that the InAs QDs are free of defects and dislocations

Misfit strain dependence of ferroelectric and piezoelectric properties of clamped (001) epitaxial Pb(Zr0.52,Ti0.48)O3 thin films

Science.gov (United States)

Nguyen, Minh D.; Dekkers, Matthijn; Houwman, Evert; Steenwelle, Ruud; Wan, Xin; Roelofs, Andreas; Schmitz-Kempen, Thorsten; Rijnders, Guus

2011-12-01

A study on the effects of the residual strain in Pb(Zr0.52Ti0.48)O3 (PZT) thin films on the ferroelectric and piezoelectric properties is presented. Epitaxial (001)-oriented PZT thin film capacitors are sandwiched between SrRuO3 electrodes. The thin film stacks are grown on different substrate-buffer-layer combinations by pulsed laser deposition. Compressive or tensile strain caused by the difference in thermal expansion of the PZT film and substrate influences the ferroelectric and piezoelectric properties. All the PZT stacks show ferroelectric and piezoelectric behavior that is consistent with the theoretical model for strained thin films in the ferroelectric r-phase. We conclude that clamped (001) oriented Pb(Zr0.52Ti0.48)O3 thin films strained by the substrate always show rotation of the polarization vector.

Electrostatic energy and screened charge interaction near the surface of metals with different Fermi surface shape

Science.gov (United States)

Gabovich, A. M.; Il'chenko, L. G.; Pashitskii, E. A.; Romanov, Yu. A.

1980-04-01

Using the Poisson equation Green function for a self-consistent field in a spatially inhomogeneous system, expressions for the electrostatic energy and screened charge interaction near the surface of a semi-infinite metal and a thin quantizing film are derived. It is shown that the decrease law and Friedel oscillation amplitude of adsorbed atom indirect interaction are determined by the electron spectrum character and the Fermi surface shape. The results obtained enable us to explain, in particular, the submonolayer adsorbed film structure on the W and Mo surfaces.

Filled and empty states of Zn-TPP films deposited on Fe(001-p(1×1O

Directory of Open Access Journals (Sweden)

Gianlorenzo Bussetti

2016-10-01

Full Text Available Zn-tetraphenylporphyrin (Zn-TPP was deposited on a single layer of metal oxide, namely an Fe(001-p(1×1O surface. The filled and empty electronic states were measured by means of UV photoemission and inverse photoemission spectroscopy on a single monolayer and a 20 monolayer thick film. The ionization energy and the electron affinity of the organic film were deduced and the interface dipole was determined and compared with data available in the literature.

Comparative study of effects of Mo and W dopants on the ferroelectric property of Pb(Zr0.3Ti0.7) thin films

International Nuclear Information System (INIS)

Zhang Zhen; Wang Shijie; Lu Li; Shu Chang; Song Wendong; Wu Ping

2008-01-01

Pb(Zr 0.3 Ti 0.7 )O 3 thin films, respectively, doped with 1 mol% W and 1 mol% Mo have been deposited on the LaNiO 3 bottom electrodes using pulse laser deposition. The x-ray diffraction analyses revealed that both dopants induced (1 1 0) orientation of the perovskite structures. Compared with the undoped PZT films, the doped PZT films showed smoother and denser surfaces. The XPS measurements indicated that W possessed a valence state of +6 in the PZTW films, but Mo showed mixed valence states of +4 and +6. The hysteresis loops and fatigue results of the undoped, the W-doped (PZTW) and the Mo-doped PZT (PZTM) films were obtained. While both the two doped films revealed better fatigue behaviour than undoped PZT, the PZTW film had a slow fatigue rate in comparison with the PZTM film, which is consistent with our previous theoretical predictions

Oxygen-induced immediate onset of the antiferromagnetic stacking in thin Cr films on Fe(001)

Energy Technology Data Exchange (ETDEWEB)

Berti, Giulia, E-mail: giulia.berti@polimi.it; Brambilla, Alberto; Calloni, Alberto; Bussetti, Gianlorenzo; Finazzi, Marco; Duò, Lamberto; Ciccacci, Franco [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)

2015-04-20

We investigated the magnetic coupling of ultra-thin Cr films grown at 600 K on a Fe(001)-p(1 × 1)O substrate by means of spin-polarized photoemission spectroscopy. Our findings show that the expected antiferromagnetic stacking of the magnetization in Cr(001) layers occurs right from the first atomic layer at the Cr/Fe interface. This is at variance with all previous observations in similar systems, prepared in oxygen-free conditions, which always reported on a delayed onset of the magnetic oscillations due to the occurrence of significant chemical alloying at the interface, which is substantially absent in our preparation.

Hydrogen retention and erosion behaviour of tungsten-doped carbon films (a-C:W)

International Nuclear Information System (INIS)

Sauter, Philipp Andre

2012-01-01

In this study tungsten-doped carbon films (a-C:W) were investigated with respect on hydrogen retention and erosion under deuterium (D) impact. a-C:W was used as model system for mixed layers, which will be deposited on the inner wall of the fusion reactor ITER. The erosion is lowered by the successive enrichment of tungsten at the surface and only mildly depends on the dopant concentration and the temperature. The hydrogen retention is determined by the diffusion of D into depth, which increases with temperature. The resulting successive accumulation of D in a-C:W is insensitive on enrichment for high fluences and in line with the accumulation of D in C.

Magnetron-sputter deposition of high-indium-content n-AlInN thin film on p-Si(001) substrate for photovoltaic applications

International Nuclear Information System (INIS)

Liu, H. F.; Tan, C. C.; Dalapati, G. K.; Chi, D. Z.

2012-01-01

Al 0.278 In 0.722 N thin films have been grown on p-type Si(001) and c-plane sapphire substrates by employing radio-frequency magnetron-sputter deposition at elevated temperatures. High-resolution x-ray diffraction, as well as pole-figure measurements, reveals no phase separation of the thin films. The Al 0.278 In 0.722 N film grown on p-Si(001) substrate is a typical fiber-texture with AlInN(0001)//Si(001) while that on the c-sapphire exhibits the onset of epitaxy. Microscopic studies reveal that the growth is dominated by a columnar mechanism and the average columnar grain diameter is about 31.5 and 50.8 nm on p-Si(001) and c-sapphire substrates, respectively. Photoluminescence at room-temperature exhibits a strong emission peak at 1.875 eV, smaller than the optical absorption edge (2.102 eV) but larger than the theoretical bandgap energy (1.70 eV), which is attributable to the band-filling effect, as is supported by the high electron density of 4.5 × 10 20 cm −3 . The n-Al 0.278 In 0.722 N/p-Si(001) heterostructure is tested for solar cells and the results are discussed based on the I-V characteristics and their fittings.

Surface correlation behaviors of metal-organic Langmuir-Blodgett films on differently passivated Si(001) surfaces

Science.gov (United States)

Bal, J. K.; Kundu, Sarathi

2013-03-01

Langmuir-Blodgett films of standard amphiphilic molecules like nickel arachidate and cadmium arachidate are grown on wet chemically passivated hydrophilic (OH-Si), hydrophobic (H-Si), and hydrophilic plus hydrophobic (Br-Si) Si(001) surfaces. Top surface morphologies and height-difference correlation functions g(r) with in-plane separation (r) are obtained from the atomic force microscopy studies. Our studies show that deposited bilayer and trilayer films have self-affine correlation behavior irrespective of different passivations and different types of amphiphilic molecules, however, liquid like correlation coexists only for a small part of r, which is located near the cutoff length (1/κ) or little below the correlation length ξ obtained from the liquid like and self-affine fitting, respectively. Thus, length scale dependent surface correlation behavior is observed for both types of Langmuir-Blodgett films. Metal ion specific interactions (ionic, covalent, etc.,) in the headgroup and the nature of the terminated bond (polar, nonpolar, etc.,) of Si surface are mainly responsible for having different correlation parameters.

Moment mapping of body-centered-cubic Fe{sub x}Mn{sub 1−x} alloy films on MgO(001)

Energy Technology Data Exchange (ETDEWEB)

Idzerda, Y. U., E-mail: idzerda@physics.montana.edu; Bhatkar, H. [Department of Physics, Montana State University, Bozeman, Montana 59717 (United States); Arenholz, E. [Advanced Light Source, Lawrence Berkeley National Laboratories, Berkeley, California 59717 (United States)

2015-05-07

The alloy composition and elemental magnetic moments of bcc single crystal films of compositionally graded Fe{sub x}Mn{sub 1−x} films (20 nm thick films with 0.8 ≤ x ≤ 0.9) grown on MgO(001) are spatially mapped using X-ray absorption spectroscopy and magnetic circular dichroism. Electron diffraction measurements on single composition samples confirmed that the structure of Fe{sub x}Mn{sub 1−x} films remained epitaxial and in the bcc phase from 0.65 ≤ x ≤ 1, but rotated 45° with respect to the MgO(001) surface net. This is beyond the bulk bcc stability limit of x = 0.88. The Fe moment is found to gradually reduce with increasing Mn content with a very abrupt decline at x = 0.85, a slightly higher composition than observed in the bulk. Surprisingly, the Mn exhibits a very small net moment (<0.1 μ{sub B}) at all compositions, suggesting a complex Mn spin structure.

Influence of texture coefficient on surface morphology and sensing properties of W-doped nanocrystalline tin oxide thin films.

Science.gov (United States)

Kumar, Manjeet; Kumar, Akshay; Abhyankar, A C

2015-02-18

For the first time, a new facile approach based on simple and inexpensive chemical spray pyrolysis (CSP) technique is used to deposit Tungsten (W) doped nanocrystalline SnO2 thin films. The textural, optical, structural and sensing properties are investigated by GAXRD, UV spectroscopy, FESEM, AFM, and home-built sensing setup. The gas sensing results indicate that, as compared to pure SnO2, 1 wt % W-doping improves sensitivity along with better response (roughness values of 3.82 eV and 3.01 nm, respectively. Reduction in texture coefficient along highly dense (110) planes with concomitant increase along loosely packed (200) planes is found to have prominent effect on gas sensing properties of W-doped films.

SnO{sub 2}/reduced graphene oxide composite films for electrochemical applications

Energy Technology Data Exchange (ETDEWEB)

Bondarenko, E.A. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Mazanik, A.V., E-mail: mazanikalexander@gmail.com [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Streltsov, E.A. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Kulak, A.I., E-mail: kulak@igic.bas-net.by [Institute of General and Inorganic Chemistry, National Academy of Sciences of Belarus, Surganova str., 9/1, Minsk 220072 (Belarus); Korolik, O.V. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus)

2015-12-15

Highlights: • SnO{sub 2}/GO composites with mass fraction of carbon phase 0.01% ≤ w{sub C} ≤ 80% have been formed. • 400 °C annealing was applied for GO reduction in the composites. • SnO{sub 2}/rGO composites demonstrate a high electrocatalytic activity in anodic processes. • Exchange current density grows linearly with carbon phase concentration at w{sub C} ≤ 10%. - Abstract: SnO{sub 2}/GO (GO is graphene oxide) composite films with GO mass fraction w{sub C} ranging from 0.01 to 80% have been prepared using colloidal solutions. Heat treatment of SnO{sub 2}/GO films in Ar atmosphere at 400 °C leads to GO reduction accompanied by partial exfoliation and decreasing of the particle thickness. SnO{sub 2}/rGO (rGO is reduced GO) film electrodes demonstrate a high electrocatalytic activity in the anodic oxidation of inorganic (iodide-, chloride-, sulfite-anions) and organic (ascorbic acid) substances. The increase of the anodic current in these reactions is characterized by overpotential inherent to the individual rGO films and exchange current density grows linearly with rGO concentration at w{sub C} ≤ 10% indicating that the rGO particles in composites act as sites of electrochemical process. The SnO{sub 2}/rGO composite films, in which the chemically stable oxide matrix encapsulates the rGO inclusions, can be considered as a promising material for applied electrochemistry.

Hetero-epitaxial growth of TiC films on MgO(001) at 100 °C by DC reactive magnetron sputtering

International Nuclear Information System (INIS)

Braic, M.; Zoita, N.C.; Danila, M.; Grigorescu, C.E.A.; Logofatu, C.

2015-01-01

Hetero-epitaxial TiC thin films were deposited at 100 °C on MgO(001) by DC reactive magnetron sputtering in a mixture of Ar and CH 4 . The 62 nm thick films were analyzed for elemental composition and chemical bonding by Auger electron spectroscopy, X-ray photoelectron spectroscopy and micro-Raman spectroscopy. The crystallographic structure investigation by high resolution X-ray diffraction revealed that the films consist of two layers: an interface partially strained epilayer with high crystalline quality, and a relaxed layer, formed by columnar grains, maintaining the epitaxial relationship with the substrate. The films presented smooth surfaces (RMS roughness ~ 0.55 nm), with circular equi-sized grains/crystallites, as observed by atomic force microscopy. The Hall measurements in Van der Pauw geometry revealed relatively high resistivity value ~ 620 μΩ cm, ascribed to electron scattering on interfaces, on grain boundaries and on different defects/dislocations. - Highlights: • Hetero-epitaxial TiC 0.84 thin films were grown on MgO(001) at 100 °C by magnetron sputtering. • 62 nm thick films were synthesized by magnetron sputtering, using Ti, Ar and CH 4 . • The film comprises a partially strained interface epilayer and a relaxed top layer. • Both layers preserve the epitaxial relationship with the substrate. • Low RMS surface roughness ~ 0.55 nm and grains with mean lateral size of ~ 38.5 nm were observed

Hetero-epitaxial growth of TiC films on MgO(001) at 100 °C by DC reactive magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Braic, M. [National Institute for Optoelectronics, 409 Atomistilor St., 077125 Magurele (Romania); Zoita, N.C., E-mail: cnzoita@inoe.ro [National Institute for Optoelectronics, 409 Atomistilor St., 077125 Magurele (Romania); Danila, M. [National Institute for Research and Development in Microtechnology, 126A Erou Iancu Nicolae Blvd., 077190 Bucharest (Romania); Grigorescu, C.E.A. [National Institute for Optoelectronics, 409 Atomistilor St., 077125 Magurele (Romania); Logofatu, C. [National Institute of Materials Physics, 105 bis Atomistilor St., 077125 Magurele (Romania)

2015-08-31

Hetero-epitaxial TiC thin films were deposited at 100 °C on MgO(001) by DC reactive magnetron sputtering in a mixture of Ar and CH{sub 4}. The 62 nm thick films were analyzed for elemental composition and chemical bonding by Auger electron spectroscopy, X-ray photoelectron spectroscopy and micro-Raman spectroscopy. The crystallographic structure investigation by high resolution X-ray diffraction revealed that the films consist of two layers: an interface partially strained epilayer with high crystalline quality, and a relaxed layer, formed by columnar grains, maintaining the epitaxial relationship with the substrate. The films presented smooth surfaces (RMS roughness ~ 0.55 nm), with circular equi-sized grains/crystallites, as observed by atomic force microscopy. The Hall measurements in Van der Pauw geometry revealed relatively high resistivity value ~ 620 μΩ cm, ascribed to electron scattering on interfaces, on grain boundaries and on different defects/dislocations. - Highlights: • Hetero-epitaxial TiC{sub 0.84} thin films were grown on MgO(001) at 100 °C by magnetron sputtering. • 62 nm thick films were synthesized by magnetron sputtering, using Ti, Ar and CH{sub 4}. • The film comprises a partially strained interface epilayer and a relaxed top layer. • Both layers preserve the epitaxial relationship with the substrate. • Low RMS surface roughness ~ 0.55 nm and grains with mean lateral size of ~ 38.5 nm were observed.

Growth optimization and electronic structure of ultrathin CoO films on Ag(001): A LEED and photoemission study

Science.gov (United States)

Barman, Sukanta; Menon, Krishnakumar S. R.

2018-04-01

We present here a detailed growth optimization of CoO thin film on Ag(001) involving the effects of different growth parameters on the electronic structure. A well-ordered stoichiometric growth of 5 ML CoO film has been observed at 473 K substrate temperature and 1 × 10-6 mbar oxygen partial pressure. The growth at lower substrate temperature and oxygen partial pressure show non-stoichiometric impurity phases which have been investigated further to correlate the growth parameters with surface electronic structure. The coverage dependent valence band electronic structure of the films grown at optimized condition reveals the presence of interfacial states near the Fermi edge (EF) for lower film coverages. Presence of interfacial states in the stoichiometric films rules out their defect-induced origin. We argue that this is an intrinsic feature of transition metal monoxides like NiO, CoO, MnO in the low coverage regime.

Epitaxial growth of chalcopyrite CuInS2 films on GaAs (001) substrates by evaporation method with elemental sources

International Nuclear Information System (INIS)

Nozomu, Tsuboi; Satoshi, Kobayash; Nozomu, Tsuboi; Takashi, Tamogami

2010-01-01

Full text : Ternary chalcopyrite semiconductor CuInS 2 is one of the potential candidates for absorber layers in high-efficiency thin film solar cells due to its direct bandgap Eg of 1.5 eV, which matches with solar spectrum. However, CuInS 2 solar cells face the problem of lower solar conversion efficiency compared with Cu(InGa)Se 2 solar cells. Investigation of fundamental properties of CuInS 2 films is necessary to understand key issues for solar cell performance. Although in bulk CuInS 2 is known to crystallize into chalcopyrite (CH) structure, in thin film other structures such as Cu-Au (CA) and sphalerite (SP) structures may coexist. It was reported epitaxial growth of slightly Cu-rich CuInS 2 films with c-axis orientated CA only and/or with a mixture of a- and c-axes orientated CH structures on GaP (001) at substrate temperature of 500 degrees using the conventional evaporation method with three elemental sources. Successful growth of epitaxial CH structured CuInS 2 were observed for films grown on GaP at 570 degrees with slightly Cu-rich composition. In this paper, CuInS 2 films with various [Cu]/[In] ratios are grown on GaAs(001) substrates, and the composition range in terms of the [Cu]/[In] ratio where epitaxial films with CH structure grow and the structural qualities of the films are discussed in comparison with those on GaP substrates. Films with various ratios of [Cu]/[In]=0.8 ≤1.9 are grown at 500 degrees and 570 degrees using the evaporation system described in our previous reports. Regardless of the substrate temperature, noticeable X-ray diffraction (XRD) peaks of CH structured CuInS 2 phase are observed in slightly Cu-rich films. However, reflection high energy electron diffraction (RHEED) patterns of the slightly Cu-rich films grown at 570 degrees exhibit noticeable spots not only due to the CH structure but also due to the CA structure. The amount of the CA structure is considered to be small because of the absence of the XRD peaks of the CA

Hydrogen retention and erosion behaviour of tungsten-doped carbon films (a-C:W); Wasserstoffrueckhaltung und Erosionsverhalten von wolframdotierten Kohlenstofffilmen (a-C:W)

Energy Technology Data Exchange (ETDEWEB)

Sauter, Philipp Andre

2012-06-13

In this study tungsten-doped carbon films (a-C:W) were investigated with respect on hydrogen retention and erosion under deuterium (D) impact. a-C:W was used as model system for mixed layers, which will be deposited on the inner wall of the fusion reactor ITER. The erosion is lowered by the successive enrichment of tungsten at the surface and only mildly depends on the dopant concentration and the temperature. The hydrogen retention is determined by the diffusion of D into depth, which increases with temperature. The resulting successive accumulation of D in a-C:W is insensitive on enrichment for high fluences and in line with the accumulation of D in C.

Magnetic and electrical transport properties of LaBaCo2O(5.5+δ) thin films on vicinal (001) SrTiO3 surfaces.

Science.gov (United States)

Ma, Chunrui; Liu, Ming; Collins, Gregory; Wang, Haibin; Bao, Shanyong; Xu, Xing; Enriquez, Erik; Chen, Chonglin; Lin, Yuan; Whangbo, Myung-Hwan

2013-01-23

Highly epitaxial LaBaCo(2)O(5.5+δ) thin films were grown on the vicinal (001) SrTiO(3) substrates with miscut angles of 0.5°, 3.0°, and 5.0° to systemically study strain effect on its physical properties. The electronic transport properties and magnetic behaviors of these films are strongly dependent on the miscut angles. With increasing the miscut angle, the transport property of the film changes from semiconducting to semimetallic, which results most probably from the locally strained domains induced by the surface step terraces. In addition, a very large magnetoresistance (34% at 60 K) was achieved for the 0.5°-miscut film, which is ~30% larger than that for the film grown on the regular (001) SrTiO(3) substrates.

Oxygen surfactant-assisted growth and dewetting of Co films on O-3 × 3/W(111)

Energy Technology Data Exchange (ETDEWEB)

Hsueh, Kun-Jen; Tsai, Cheng-Jui; Lin, Wen-Chin, E-mail: wclin@ntnu.edu.tw [Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan (China); Wu, Shih-Yu; Chou, Hsin-Lei; Kuo, Chien-Cheng, E-mail: cckuo@faculty.nsysu.edu.tw [Department of Physics, National Sun Yat-sen University, Kaohsiung 804, Taiwan (China); Bisio, Francesco [CNR-SPIN, C.so Perrone 24, I-16152 Genova (Italy)

2013-11-28

Following the cyclic heating in oxygen and annealing, an oxygen-induced 3 × 3 reconstruction was found on the W(111) surface. The growth, crystalline structure, thermal stability, and magnetism of Co ultrathin films deposited on the O-3 × 3/W(111) surface were investigated. The Auger signal of the oxygen was always observable and nearly invariant after either Co deposition or annealing, indicating the role of the surfactant played by oxygen. Auger electron spectroscopy and scanning tunneling microscopy measurements revealed the 2-dimensional growth of Co on O-3 × 3/W(111). Following the annealing procedures, the surfactant oxygen was always observed to float on the film surface while the Co film transformed to 3-dimensional islands with a wetting layer. In contrast to the thermodynamically stable wetting layer of 1 physical monolayer (PML) Co on clean W(111) between 700 and 1000 K, the oxygen surfactant led to a reduction of the wetting layer to ≈1/3 PML after thermal annealing. The 6 and 9.6 PML Co/O-3 × 3/W(111) revealed a stable in-plane magnetic anisotropy. A 6-fold symmetry corresponding to the crystalline structure was observed in the in-plane angle-dependent magneto-optical Kerr effect measurement.

Oxygen surfactant-assisted growth and dewetting of Co films on O-3 × 3/W(111)

International Nuclear Information System (INIS)

Hsueh, Kun-Jen; Tsai, Cheng-Jui; Lin, Wen-Chin; Wu, Shih-Yu; Chou, Hsin-Lei; Kuo, Chien-Cheng; Bisio, Francesco

2013-01-01

Following the cyclic heating in oxygen and annealing, an oxygen-induced 3 × 3 reconstruction was found on the W(111) surface. The growth, crystalline structure, thermal stability, and magnetism of Co ultrathin films deposited on the O-3 × 3/W(111) surface were investigated. The Auger signal of the oxygen was always observable and nearly invariant after either Co deposition or annealing, indicating the role of the surfactant played by oxygen. Auger electron spectroscopy and scanning tunneling microscopy measurements revealed the 2-dimensional growth of Co on O-3 × 3/W(111). Following the annealing procedures, the surfactant oxygen was always observed to float on the film surface while the Co film transformed to 3-dimensional islands with a wetting layer. In contrast to the thermodynamically stable wetting layer of 1 physical monolayer (PML) Co on clean W(111) between 700 and 1000 K, the oxygen surfactant led to a reduction of the wetting layer to ≈1/3 PML after thermal annealing. The 6 and 9.6 PML Co/O-3 × 3/W(111) revealed a stable in-plane magnetic anisotropy. A 6-fold symmetry corresponding to the crystalline structure was observed in the in-plane angle-dependent magneto-optical Kerr effect measurement

On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface

International Nuclear Information System (INIS)

Grabowski, Jan

2010-01-01

Semiconductor nanostructures are currently of high interest for a wide variety of electronic and optoelectronic applications. A large number of devices, in particular for the optical data transmission in the long-wavelength range, essential in modern communication, are based on InAs/GaAs quantum dot (QD) structures. Though the properties of the InAs/GaAs QDs have been extensively studied, only little is known about the formation and structure of the wetting layer (WL) yet. In the present work, the pathway of the InAs WL evolution is studied in detail. For this purpose, InAs thin films in the range of one monolayer (ML) are deposited on the GaAs(001) surface by molecular beam epitaxy (MBE) and studied by reflection high energy electron diffraction (RHEED) and in particular by scanning tunneling microscopy (STM). The InAs thin films are grown in both typical growth regimes, on the GaAs-c(4 x 4) and the GaAs-β2(2 x 4) reconstructed surface, in a variety of thicknesses starting from submonolayers with 0.09 ML of InAs up to 1.65 ML of InAs exceeding the critical thickness for QD growth. In principle, three growth stages are found. At low InAs coverages, the indium adsorbs in agglomerations of typically eight In atoms at energetically preferable surface sites. In the STM images, the signatures of these In agglomerations appear with a clear bright contrast. A structural model for the initial formation of these signatures is presented, and its electronic and strain related properties are discussed. At an InAs coverage of about 0.67ML the initial surface transforms into a (4 x 3) reconstructed In 2/3 Ga 1/3 As ML and the detailed structure and strain properties of this surface are unraveled. On top of the InGaAs ML further deposited InAs forms a second layer, characterized by a typical zig-zag alignment of (2 x 4) reconstructed unit cells, with an alternating α2/α2-m configuration. In contrast to the previous surface reconstructions, where structural strain is

On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface

Energy Technology Data Exchange (ETDEWEB)

Grabowski, Jan

2010-12-14

Semiconductor nanostructures are currently of high interest for a wide variety of electronic and optoelectronic applications. A large number of devices, in particular for the optical data transmission in the long-wavelength range, essential in modern communication, are based on InAs/GaAs quantum dot (QD) structures. Though the properties of the InAs/GaAs QDs have been extensively studied, only little is known about the formation and structure of the wetting layer (WL) yet. In the present work, the pathway of the InAs WL evolution is studied in detail. For this purpose, InAs thin films in the range of one monolayer (ML) are deposited on the GaAs(001) surface by molecular beam epitaxy (MBE) and studied by reflection high energy electron diffraction (RHEED) and in particular by scanning tunneling microscopy (STM). The InAs thin films are grown in both typical growth regimes, on the GaAs-c(4 x 4) and the GaAs-{beta}2(2 x 4) reconstructed surface, in a variety of thicknesses starting from submonolayers with 0.09 ML of InAs up to 1.65 ML of InAs exceeding the critical thickness for QD growth. In principle, three growth stages are found. At low InAs coverages, the indium adsorbs in agglomerations of typically eight In atoms at energetically preferable surface sites. In the STM images, the signatures of these In agglomerations appear with a clear bright contrast. A structural model for the initial formation of these signatures is presented, and its electronic and strain related properties are discussed. At an InAs coverage of about 0.67ML the initial surface transforms into a (4 x 3) reconstructed In{sub 2/3}Ga{sub 1/3}As ML and the detailed structure and strain properties of this surface are unraveled. On top of the InGaAs ML further deposited InAs forms a second layer, characterized by a typical zig-zag alignment of (2 x 4) reconstructed unit cells, with an alternating {alpha}2/{alpha}2-m configuration. In contrast to the previous surface reconstructions, where

Temperature dependence of photoluminescence from submonolayer deposited InGaAs/GaAs quantum dots

DEFF Research Database (Denmark)

Xu, Zhangcheng; Leosson, K.; Birkedal, Dan

2002-01-01

The temperature dependence of photoluminescence (PL) from self-assembled InGaAs quantum dots (QD's) grown by submonolayer deposition mode (non-SK mode), is investigated. It is found that the PL spectra are dominated by the ground-state transitions at low temperatures, but increasingly...... by the excited-state transitions at higher temperatures. The emission linewidth of the ground-state transitions of QDs ensembles first decreases and then increases with the increase of temperature, which results from the carrier transfer between dots via barrier states....

Antiferromagnetic coupling of TbPc2 molecules to ultrathin Ni and Co films

Directory of Open Access Journals (Sweden)

David Klar

2013-05-01

Full Text Available The magnetic and electronic properties of single-molecule magnets are studied by X-ray absorption spectroscopy and X-ray magnetic circular dichroism. We study the magnetic coupling of ultrathin Co and Ni films that are epitaxially grown onto a Cu(100 substrate, to an in situ deposited submonolayer of TbPc2 molecules. Because of the element specificity of the X-ray absorption spectroscopy we are able to individually determine the field dependence of the magnetization of the Tb ions and the Ni or Co film. On both substrates the TbPc2 molecules couple antiferromagnetically to the ferromagnetic films, which is possibly due to a superexchange interaction via the phthalocyanine ligand that contacts the magnetic surface.

On the Relationship of Magnetocrystalline Anisotropy and Stoichiometry in Epitaxial L1{sub 0} CoPt(001) and FePt(001) Thin Films

Energy Technology Data Exchange (ETDEWEB)

Barmak, K

2004-08-10

Two series of epitaxial CoPt and FePt films, with nominal thicknesses of 42 or 50 nm, were prepared by sputtering onto single crystal MgO(001) substrates in order to investigate the chemical ordering and the resultant magnetic properties as a function of alloy composition. In the first series, the film composition was kept constant, while the substrate temperature was increased from 144 to 704 C. In the second series the substrate temperature was kept constant at 704 C for CoPt and 620 C for FePt, while the alloy stoichiometry was varied in the nominalrange of 40-60 at% Co(Fe). Film compositions and thicknesses were measured via Rutherford backscattering spectrometry. The lattice and long-range order parameter for the L1{sub 0} phase were obtained for both sets of films using x-ray diffraction. The room-temperature magnetocrystalline anisotropy constants were determined for a subset of the films using torque magnetometry. The order parameter was found to increase with increasing temperature, with ordering occurring more readily in FePt when compared with CoPt. A perpendicular anisotropy developed in CoPt for substrate temperatures above 534 C and in FePt above 321 C. The structure and width of the magnetic domains in CoPt and FePt, as seen by magnetic force microscopy, also demonstrated an increase in magnetic anisotropy with increasing temperature. For the films deposited at the highest temperatures (704 C for CoPt and 620 C for FePt), the order parameter reached a maximum near the equiatomic composition, whereas the magnetocrystalline anisotropy increased as the concentration of Co or Fe was increased from below to slightly above the equiatomic composition. It is concluded that non-stoichiometric L1{sub 0} CoPt and FePt, with a slight excess of Co or Fe, are preferable for applications requiring the highest anisotropies.

Epitaxial growth of manganese oxide films on MgAl2O4 (001) substrates and the possible mechanism

Science.gov (United States)

Ren, Lizhu; Wu, Shuxiang; Zhou, Wenqi; Li, Shuwei

2014-03-01

Three types of manganese oxide films were grown on MgAl2O4 (001) substrates by plasma-assisted molecular beam epitaxy (PA-MBE) under different growth rates and substrate temperatures. The structural characteristics and chemical compositions of the films were investigated by using in-situ reflection high-energy electron diffraction (RHEED), ex-situ X-ray diffraction, Raman, and X-ray photoelectron spectra (XPS). At a lower substrate temperature (730 K), the epitaxial film tends to form mixed phases with a coexistence of Mn3O4 and Mn5O8 in order to relieve the mismatch-strain. However, at a higher substrate temperature (750 K), all of the films crystallize into Mn3O4; the critical thickness of the film grown under a lower growth rate (7 Å/min) is much larger than that under a high growth rate (10 Å/min). When the film reaches a certain critical thickness, the surface will become fairly rough, and another oriented phase Mn3O4 would crystallize on such a surface.

Structure and magnetoresistance of La0.67Ca0.33MnO3 films grown coherently on (001)NdGaO3

International Nuclear Information System (INIS)

Bojkov, Yu.A.; Danilov, V.A.; Bojkov, A.Yu.

2003-01-01

The (001) La 0.67 Ca 0.33 MnO 3 films, 40-120 nm thick, grown through the method of the laser evaporation on the (001)NdGaO 3 , are studied. The crystalline lattice parameters, measured for the La 0.67 Ca 0.33 MnO 3 film in the substrate plane α parallel = 3.851 A and along the normal to its surface α perpendicular = 3.850 A practically coincide with the parameter of the pseudocubic elementary cell of the neodymium gallate. The elementary cell volume in the La 0.67 Ca 0.33 MnO 3 film was insignificantly lesser than the corresponding value for the stoichiometric voluminous samples. The position of the maximum on the specific resistance dependence on the temperature did not depend on the La 0.67 Ca 0.33 MnO 3 film thickness. The maximum values of the negative magnetoresistance (MR ≅ 0.25, H = 0.4 T) for the La 0.67 Ca 0.33 MnO 3 films were observed at the temperatures of 239-244 K [ru

Ion channeling study of epitaxially grown HoBa2Cu3Ox thin films on MgO(001)

International Nuclear Information System (INIS)

Watamori, Michio; Shoji, Fumiya; Hanawa, Teruo; Oura, Kenjiro; Itozaki, Hideo.

1990-01-01

The crystalline quality of high-T c superconducting HoBa 2 Cu 3 O x thin films formed on MgO(001) has been investigated by a high-energy ion channeling technique. Analysis was performed at 3 depth regions (surface, inside, and interface), and the degree of crystalline quality at each depth was estimated. Based on ion channeling measurements carried out with the normal and off-normal and directions, it has been found that (1) the crystalline quality at the film surface is much better than that at the interface, (2) the crystalline disorder can be seen mainly along the c-axis, and (3) the film consists of two domains, 90deg rotated from each other about the c-axis of the film. The crystalline quality of the MgO substrates has also been investigated. (author)

The stability and half-metallicity of (001) surface and (001) interface based on zinc blende MnAs

Science.gov (United States)

Han, Hongpei; Feng, Tuanhui; Zhang, Chunli; Feng, Zhibo; Li, Ming; Yao, K. L.

2018-06-01

Motivated by the growth of MnAs/GaAs thin films in many experimental researches, we investigate the electronic and magnetic properties of bulk, (001) surfaces and (001) interfaces for zinc blende MnAs by means of first-principle calculations. It is confirmed that zinc blende MnAs is a nearly half-metallic ferromagnet with 4.00 μB magnetic moment. The calculated density of states show that the half-metallicity exists in As-terminated (001) surface while it is lost in Mn-terminated (001) surface. For the (001) interfaces of MnAs with semiconductor GaAs, it is found that As-Ga and Mn-As interfaces not only have higher spin polarization but also are more stable among the four considered interfaces. Our results would be helpful to grow stable and high polarized thin films or multilayers for the practical applications of spintronic devices.

Comparison between thermal annealing and ion mixing of multilayered Ni-W films on Si. II

International Nuclear Information System (INIS)

Pai, C.S.; Lau, S.S.; Poker, D.B.; Hung, L.S.

1985-01-01

The reactions between bilayered Ni/W films and Si substrates induced by thermal annealing and ion mixing were investigated and compared. Samples were prepared by electron-beam sequential deposition of Ni and W onto the Si substrates and following by either furnace annealing (approx. 200--900 0 C) or ion mixing (approx. 2 x 10 15 -- 4 x 10 16 86 Kr + ions/cm 2 ). The reactions were analyzed by Rutherford backscattering and x-ray diffraction (Read camera). Thermal annealing of both W/Ni/Si and Ni/W/Si samples led to the formation of Ni silicide next to the Si substrate and W silicide on the sample surface (layer reversal between Ni and W in the Ni/W/Si case). Ion mixing of W/Ni/Si samples led to the formation of Ni silicide with a thin layer of Ni-W-Si mixture located at the sample surface. For Ni/W/Si samples a ternary amorphous mixture of Ni-W-Si was obtained with ion mixing. These reactions were rationalized in terms of the mobilities of various atoms and the intermixings between layers

Growth and characterization of epitaxial anatase TiO2(001) on SrTiO3-buffered Si(001) using atomic layer deposition

International Nuclear Information System (INIS)

McDaniel, M.D.; Posadas, A.; Wang, T.; Demkov, A.A.; Ekerdt, J.G.

2012-01-01

Epitaxial anatase titanium dioxide (TiO 2 ) films have been grown by atomic layer deposition (ALD) on Si(001) substrates using a strontium titanate (STO) buffer layer grown by molecular beam epitaxy (MBE) to serve as a surface template. The growth of TiO 2 was achieved using titanium isopropoxide and water as the co-reactants at a substrate temperature of 225–250 °C. To preserve the quality of the MBE-grown STO, the samples were transferred in-situ from the MBE chamber to the ALD chamber. After ALD growth, the samples were annealed in-situ at 600 °C in vacuum (10 −7 Pa) for 1–2 h. Reflection high-energy electron diffraction was performed during the MBE growth of STO on Si(001), as well as after deposition of TiO 2 by ALD. The ALD films were shown to be highly ordered with the substrate. At least four unit cells of STO must be present to create a stable template on the Si(001) substrate for epitaxial anatase TiO 2 growth. X-ray diffraction revealed that the TiO 2 films were anatase with only the (004) reflection present at 2θ = 38.2°, indicating that the c-axis is slightly reduced from that of anatase powder (2θ = 37.9°). Anatase TiO 2 films up to 100 nm thick have been grown that remain highly ordered in the (001) direction on STO-buffered Si(001) substrates. - Highlights: ► Epitaxial anatase films are grown by atomic layer deposition (ALD) on Si(001). ► Four unit cells of SrTiO 3 on silicon create a stable template for ALD. ► TiO 2 thin films have a compressed c-axis and an expanded a-axis. ► Up to 100 nm thick TiO 2 films remain highly ordered in the (001) direction.

Effects of deposition temperature and in-situ annealing time on structure and magnetic properties of (001) orientation FePt films

International Nuclear Information System (INIS)

Yu, Yongsheng; George, T.A.; Li, Haibo; Sun, Daqian; Ren, Zhenan; Sellmyer, D.J.

2013-01-01

FePt films were prepared on (100) oriented single crystal MgO substrates at high temperature ranging from 620 until 800 °C and in-situ annealed for different times ranging from 0 to 60 min to obtain ordered FePt films. The structural analysis indicates that FePt films grow epitaxially on MgO (100) substrates. Both increasing deposition temperature and in-situ annealing time enhance the (001) texture and ordering of FePt films. The magnetic analysis shows that these L1 0 FePt films have perpendicular anisotropy and the easy magnetization c-axis is perpendicular to the film plane. Magnetization reversal is controlled by a rotational mechanism. The hard magnetic properties of the films are improved with increasing deposition temperature or in-situ annealing time. - Highlights: ► The paper reports the texture and magnetic evolution of FePt films deposited on MgO substrates. ► Increasing deposition temperature or annealing time enhanced the texture and ordering. ► The magnetic analysis shows L1 0 FePt films have perpendicular anisotropy.

DC-magnetron sputtering of ZnO:Al films on (00.1)Al2O3 substrates from slip-casting sintered ceramic targets

International Nuclear Information System (INIS)

Miccoli, I.; Spampinato, R.; Marzo, F.; Prete, P.; Lovergine, N.

2014-01-01

Highlights: • ZnO:Al was DC-sputtered on sapphire >350 °C by slip-casting sintered AZO target. • Films are highly (00.1)-oriented, smooth and transparent in the NIR–visible range. • Films growth rate decreases with temperature, while their grain size increases. • A high temperature reduction for sticking coefficients of impinging species is proved. • We prove that Thornton model does not apply to high-temperature DC-sputtered ZnO. - Abstract: High (>350 °C) temperature DC-sputtering deposition of ZnO:Al thin films onto single-crystal (00.1) oriented Al 2 O 3 (sapphire) substrates is reported, using a ultrahigh-density, low-resistivity and low-cost composite ceramic target produced by slip-casting (pressureless) sintering of ZnO–Al 2 O 3 (AZO) powders. The original combination of high-angle θ–2θ (Bragg–Brentano geometry) X-ray diffraction with low angle θ–2θ X-ray reflectivity (XRR) techniques allows us to define the AZO target composition and investigate the structural properties and surface/interface roughness of as-sputtered ZnO:Al films; besides, the growth dynamics of ZnO:Al is unambiguously determined. The target turned out composed of the sole wurtzite ZnO and spinel ZnAl 2 O 4 phases. X-ray diffraction analyses revealed highly (00.1)-oriented (epitaxial) ZnO:Al films, the material mean crystallite size being in the 13–20 nm range and increasing with temperature between 350 °C and 450 °C, while the film growth rate (determined via XRR measurements) decreases appreciably. XRR spectra also allowed to determine rms surface roughness <1 nm for present films and showed ZnO:Al density changes by only a few percent between 350 °C and 450 °C. The latter result disproves the often-adopted Thornton model for the description of the sputter-grown ZnO films and instead points out toward a reduction of the sticking coefficients of impinging species, as the main origin of film growth rate and grain size dependence with temperature. Zn

Near-room temperature deposition of W and WO3 thin films by hydrogen atom assisted chemical vapor deposition

International Nuclear Information System (INIS)

Lee, W.W.; Reeves, R.R.

1992-01-01

A novel near-room temperatures CVD process has been developed using H-atoms reaction with WF 6 to produced tungsten and tungsten oxide films. The chemical, physical and electrical properties of these films were studied. Good adhesion and low resistivity of W films were measured. Conformal WO 3 films were obtained on columnar tungsten using a small amount of molecular oxygen in the gas stream. A reaction mechanism was evaluated on the basis of experimental results. The advantages of the method include deposition of adherent films in a plasma-free environment, near-room temperature, with a low level of impurity

Microstructure of epitaxial YBa2Cu3O7-x thin films grown on LaAlO3 (001)

International Nuclear Information System (INIS)

Hsieh, Y.; Siegal, M.P.; Hull, R.; Phillips, J.M.

1990-01-01

We report a microstructural investigation of the epitaxial growth of YBa 2 Cu 3 O 7-x (YBCO) thin films on LaAlO 3 (001) substrates using transmission electron microscopy (TEM). Epitaxial films grow with two distinct modes: c epitaxy (YBCO) single crystal with the c (axis normal to the surface and a epitaxy (YBCO) single crystal with the c axis in the interfacial plane), where c epitaxy is the dominant mode grown in all samples 35--200 nm thick. In 35 nm YBCO films annealed at 850 degree C, 97±1% of the surface area is covered by c epitaxy with embedded anisotropic a-epitaxial grains. Quantitative analysis reveals the effect of film thickness and annealing temperature on the density, grain sizes, areal coverages, and anisotropic growth of a epitaxy

High-performance thermal sensitive W-doped VO{sub 2}(B) thin film and its identification by first-principles calculations

Energy Technology Data Exchange (ETDEWEB)

Wan, Dongyun; Xiong, Ping; Chen, Lanli [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China); Shi, Siqi, E-mail: sqshi@shu.edu.cn [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China); Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Ishaq, Ahmad [National Center for Physics, Quaid-I-Azam University, Islamabad 44000 (Pakistan); Luo, Hongjie [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China); Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Gao, Yanfeng, E-mail: yfgao@shu.edu.cn [School of Materials Science and Engineering, Shanghai University, Shanghai 200444 (China)

2017-03-01

Graphical abstract: VO{sub 2}(B) thin films with high TCR and suitable resistance were first achieved by W doping. The mechanism for performance improvement was studied by first-principles calculations. The two-dimensional octahedral structure of VO{sub 2}(B) favors the strain control with W-doping for achieving a large TCR, which overcomes the contradiction between the high conductivity and large TCR generated by dopants in VO{sub 2}(M). - Highlights: • High performance W-doped VO{sub 2}(B) thin films were first achieved by co-sputtering. • Mechanism for performance improvement was studied by first-principles calculations. • The two-dimensional octahedral structure of VO{sub 2} (B) favors the strain control. • Achieved VO{sub 2} films possess high thermal sensitivity (TCR: −3.9%/K & R{sub 0}: 32.7 kΩ). - Abstract: VO{sub 2}(B) is currently a preferred phase structure for the application as bolometer material, which, however, suffers from low temperature-coefficient-of-resistance (TCR) values and large resistances. Here we present the combined experimental and first-principles calculations study on both doped and undoped VO{sub 2}(B) thin films enabling us to attain high TCR (−3.9%/k) and suitable square-resistance (32.7 kΩ) by controlled W doping employing the widely used magnetron sputtering technique. The TCR value is 50% larger than reported ones at the similar resistance. The underlying microscopic mechanism for the performance improvement was studied and results indicated that the introduction of extra electrons and the variation in the band structure resulting from the incorporation of W{sup 6+} ions in the VO{sub 2}(B) crystal lattice contribute to the enhancement of the electronic conductivity. Moreover, the special two-dimensional octahedral structure of monoclinic (C2/m) B-phase VO{sub 2} favors the strain control with W-doping for achieving a large TCR, which overcomes the analogous predicament between the high conductivity and large TCR

Enhanced interfacial Dzyaloshinskii-Moriya interaction and isolated skyrmions in the inversion-symmetry-broken Ru/Co/W/Ru films

Science.gov (United States)

Samardak, Alexander; Kolesnikov, Alexander; Stebliy, Maksim; Chebotkevich, Ludmila; Sadovnikov, Alexandr; Nikitov, Sergei; Talapatra, Abhishek; Mohanty, Jyoti; Ognev, Alexey

2018-05-01

An enhancement of the spin-orbit effects arising on an interface between a ferromagnet (FM) and a heavy metal (HM) is possible through the strong breaking of the structural inversion symmetry in the layered films. Here, we show that an introduction of an ultrathin W interlayer between Co and Ru in Ru/Co/Ru films enables to preserve perpendicular magnetic anisotropy (PMA) and simultaneously induce a large interfacial Dzyaloshinskii-Moriya interaction (iDMI). The study of the spin-wave propagation in the Damon-Eshbach geometry by Brillouin light scattering spectroscopy reveals the drastic increase in the iDMI value with the increase in W thickness (tW). The maximum iDMI of -3.1 erg/cm2 is observed for tW = 0.24 nm, which is 10 times larger than for the quasi-symmetrical Ru/Co/Ru films. We demonstrate the evidence of the spontaneous field-driven nucleation of isolated skyrmions supported by micromagnetic simulations. Magnetic force microscopy measurements reveal the existence of sub-100-nm skyrmions in the zero magnetic field. The ability to simultaneously control the strength of PMA and iDMI in quasi-symmetrical HM/FM/HM trilayer systems through the interface engineered inversion asymmetry at the nanoscale excites new fundamental and practical interest in ultrathin ferromagnets, which are a potential host for stable magnetic skyrmions.

Epitaxial integration of CoFe2O4 thin films on Si (001) surfaces using TiN buffer layers

Science.gov (United States)

Prieto, Pilar; Marco, José F.; Prieto, José E.; Ruiz-Gomez, Sandra; Perez, Lucas; del Real, Rafael P.; Vázquez, Manuel; de la Figuera, Juan

2018-04-01

Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe2, or ceramic, CoFe2O4, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe2O4 [100]/TiN [100]/Si [100]. Mössbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in-plane anisotropy depends on the lattice mismatch between CoFe2O4 and TiN, which is larger for CoFe2O4 thin films grown on the reactive sputtering process with ceramic targets.

Epitaxial growth of SrTiO3 (001) films on multilayer buffered GaN (0002) by pulsed laser deposition

International Nuclear Information System (INIS)

Luo, W B; Jing, J; Shuai, Y; Zhu, J; Zhang, W L; Zhou, S; Gemming, S; Du, N; Schmidt, H

2013-01-01

SrTiO 3 films were grown on CeO 2 /YSZ/TiO 2 multilayer buffered GaN/Al 2 O 3 (0001) substrates with and without the YBa 2 Cu 3 O 7-x (YBCO) bridge layer by pulsed laser deposition (PLD). The deposition process of the buffer layers was in situ monitored by reflection high-energy electron diffraction. The crystallographical orientation of the heterostructure was studied by x-ray diffraction (XRD). With the introduction of the YBCO (001) layer, the STO (001) film was epitaxially grown on the GaN substrate. There were three sets of inplane domains separated from each other by 30° in both STO and YBCO buffer layers. The epitaxial relationship was STO (002)[110]∥YBCO(001)[110]∥CeO 2 (002)[010]∥YSZ (002)[010]∥GaN(0001)[1 1 -2 0] according to XRD results. By comparing the orientation of STO grown on GaN with and without the YBCO top buffer layer, the surface chemical bonding was found to be a very important factor in determining the orientation relationship of STO.

Nanoindentation and micro-mechanical fracture toughness of electrodeposited nanocrystalline Ni–W alloy films

International Nuclear Information System (INIS)

Armstrong, D.E.J.; Haseeb, A.S.M.A.; Roberts, S.G.; Wilkinson, A.J.; Bade, K.

2012-01-01

Nanocrystalline nickel–tungsten alloys have great potential in the fabrication of components for microelectromechanical systems. Here the fracture toughness of Ni–12.7 at.%W alloy micro-cantilever beams was investigated. Micro-cantilevers were fabricated by UV lithography and electrodeposition and notched by focused ion beam machining. Load was applied using a nanoindenter and fracture toughness was calculated from the fracture load. Fracture toughness of the Ni–12.7 at.%W was in the range of 1.49–5.14 MPa √m. This is higher than the fracture toughness of Si (another important microelectromechanical systems material), but considerably lower than that of electrodeposited nickel and other nickel based alloys. - Highlights: ► Micro-scale cantilevers manufactured by electro-deposition and focused ion beam machining. ► Nanoindenter used to perform micro-scale fracture test on Ni-13at%W micro-cantilevers. ► Calculation of fracture toughness of electrodeposited Ni-13at%W thin films. ► Fracture toughness values lower than that of nanocrystalline nickel.

Nanoindentation and micro-mechanical fracture toughness of electrodeposited nanocrystalline Ni-W alloy films

Energy Technology Data Exchange (ETDEWEB)

Armstrong, D.E.J., E-mail: david.armstrong@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH (United Kingdom); Haseeb, A.S.M.A. [Department of Mechanical Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Roberts, S.G.; Wilkinson, A.J. [Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH (United Kingdom); Bade, K. [Institut fuer Mikrostrukturtechnik (IMT), Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

2012-04-30

Nanocrystalline nickel-tungsten alloys have great potential in the fabrication of components for microelectromechanical systems. Here the fracture toughness of Ni-12.7 at.%W alloy micro-cantilever beams was investigated. Micro-cantilevers were fabricated by UV lithography and electrodeposition and notched by focused ion beam machining. Load was applied using a nanoindenter and fracture toughness was calculated from the fracture load. Fracture toughness of the Ni-12.7 at.%W was in the range of 1.49-5.14 MPa {radical}m. This is higher than the fracture toughness of Si (another important microelectromechanical systems material), but considerably lower than that of electrodeposited nickel and other nickel based alloys. - Highlights: Black-Right-Pointing-Pointer Micro-scale cantilevers manufactured by electro-deposition and focused ion beam machining. Black-Right-Pointing-Pointer Nanoindenter used to perform micro-scale fracture test on Ni-13at%W micro-cantilevers. Black-Right-Pointing-Pointer Calculation of fracture toughness of electrodeposited Ni-13at%W thin films. Black-Right-Pointing-Pointer Fracture toughness values lower than that of nanocrystalline nickel.

Heat capacity measurements of atoms and molecules adsorbed on evaporated metal films

International Nuclear Information System (INIS)

Kenny, T.W.

1989-05-01

Investigations of the properties of absorbed monolayers have received great experimental and theoretical attention recently, both because of the importance of surface processes in practical applications such as catalysis, and the importance of such systems to the understanding of the fundamentals of thermodynamics in two dimensions. We have adapted the composite bolometer technology to the construction of microcalorimeters. For these calorimeters, the adsorption substrate is an evaporated film deposited on one surface of an optically polished sapphire wafer. This approach has allowed us to make the first measurements of the heat capacity of submonolayer films of 4 He adsorbed on metallic films. In contrast to measurements of 4 He adsorbed on all other insulating substrates, we have shown that 4 He on silver films occupies a two-dimensional gas phase over a broad range of coverages and temperatures. Our apparatus has been used to study the heat capacity of Indium flakes. CO multilayers, 4 He adsorbed on sapphire and on Ag films and H 2 adsorbed on Ag films. The results are compared with appropriate theories. 68 refs., 19 figs

UV laser deposition of metal films by photogenerated free radicals

Science.gov (United States)

Montgomery, R. K.; Mantei, T. D.

1986-01-01

A novel photochemical method for liquid-phase deposition of metal films is described. In the liquid phase deposition scheme, a metal containing compound and a metal-metal bonded carbonyl complex are dissolved together in a polar solvent and the mixture is irradiated using a UV laser. The optical arrangement consists of a HeCd laser which provides 7 mW of power at a wavelength of 325 nm in the TEM(OO) mode. The beam is attenuated and may be expanded to a diameter of 5-20 mm. Experiments with photochemical deposition of silver films onto glass and quartz substrates are described in detail. Mass spectrometric analysis of deposited silver films indicated a deposition rate of about 1 A/s at incident power levels of 0.01 W/sq cm. UV laser-induced copper and palladium films have also been obtained. A black and white photograph showing the silver Van Der Pauw pattern of a solution-deposited film is provided.

Pulsed laser-deposited nanocrystalline GdB{sub 6} thin films on W and Re as field emitters

Energy Technology Data Exchange (ETDEWEB)

Suryawanshi, Sachin R.; More, Mahendra A. [Savitribai Phule Pune University, Department of Physics, Centre for Advanced Studies in Materials Science and Condensed Matter Physics, Pune (India); Singh, Anil K.; Sinha, Sucharita [Bhabha Atomic Research Centre, Laser and Plasma Technology Division, Trombay, Mumbai (India); Phase, Deodatta M. [UGC-DAE Consortium for Scientific Research Indore Centre, Indore (India); Late, Dattatray J. [CSIR-National Chemical Laboratory, Physical and Materials Chemistry Division, Pune (India)

2016-10-15

Gadolinium hexaboride (GdB{sub 6}) nanocrystalline thin films were grown on tungsten (W), rhenium (Re) tips and foil substrates using optimized pulsed laser deposition (PLD) technique. The X-ray diffraction analysis reveals formation of pure, crystalline cubic phase of GdB{sub 6} on W and Re substrates, under the prevailing PLD conditions. The field emission (FE) studies of GdB{sub 6}/W and GdB{sub 6}/Re emitters were performed in a planar diode configuration at the base pressure ∝10{sup -8} mbar. The GdB{sub 6}/W and GdB{sub 6}/Re tip emitters deliver high emission current densities of ∝1.4 and 0.811 mA/cm{sup 2} at an applied field of ∝6.0 and 7.0 V/μm, respectively. The Fowler-Nordheim (F-N) plots were found to be nearly linear showing metallic nature of the emitters. The noticeably high values of field enhancement factor (β) estimated using the slopes of the F-N plots indicate that the PLD GdB{sub 6} coating on W and Re substrates comprises of high-aspect-ratio nanostructures. Interestingly, the GdB{sub 6}/W and GdB{sub 6}/Re planar emitters exhibit excellent current stability at the preset values over a long-term operation, as compared to the tip emitters. Furthermore, the values of workfunction of the GdB{sub 6}/W and GdB6/Re emitters, experimentally measured using ultraviolet photoelectron spectroscopy, are found to be same, ∝1.6 ± 0.1 eV. Despite possessing same workfunction value, the FE characteristics of the GdB{sub 6}/W emitter are markedly different from that of GdB{sub 6}/Re emitter, which can be attributed to the growth of GdB{sub 6} films on W and Re substrates. (orig.)

Local conductivity and the role of vacancies around twin walls of (001)-BiFeO3 thin films

NARCIS (Netherlands)

Farokhipoor, S.; Noheda, Beatriz

2012-01-01

BiFeO3 thin films epitaxially grown on SrRuO3-buffered (001)-oriented SrTiO3 substrates show orthogonal bundles of twin domains, each of which contains parallel and periodic 71 degrees domain walls. A smaller amount of 109 degrees domain walls are also present at the boundaries between two adjacent

Surface defects on the Gd{sub 2}Zr{sub 2}O{sub 7} oxide films grown on textured NiW technical substrates by chemical solution method

Energy Technology Data Exchange (ETDEWEB)

Zhao, Y., E-mail: yuezhao@sjtu.edu.cn [School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, 200240 Shanghai (China); Department of Energy Conversion and Storage, Technical University of Denmark, 4000 Roskilde (Denmark); Opata, Yuri A. [Department of Energy Conversion and Storage, Technical University of Denmark, 4000 Roskilde (Denmark); Wu, W. [School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, 200240 Shanghai (China); Grivel, J.C. [Department of Energy Conversion and Storage, Technical University of Denmark, 4000 Roskilde (Denmark)

2017-02-15

Epitaxial growth of oxide thin films has attracted much interest because of their broad applications in various fields. In this study, we investigated the microstructure of textured Gd{sub 2}Zr{sub 2}O{sub 7} films grown on (001)〈100〉 orientated NiW alloy substrates by a chemical solution deposition (CSD) method. The aging effect of precursor solution on defect formation was thoroughly investigated. A slight difference was observed between the as-obtained and aged precursor solutions with respect to the phase purity and global texture of films prepared using these solutions. However, the surface morphologies are different, i.e., some regular-shaped regions (mainly hexagonal or dodecagonal) were observed on the film prepared using the as-obtained precursor, whereas the film prepared using the aged precursor exhibits a homogeneous structure. Electron backscatter diffraction and scanning electron microscopy analyses showed that the Gd{sub 2}Zr{sub 2}O{sub 7} grains present within the regular-shaped regions are polycrystalline, whereas those present in the surrounding are epitaxial. Some polycrystalline regions ranging from several micrometers to several tens of micrometers grew across the NiW grain boundaries underneath. To understand this phenomenon, the properties of the precursors and corresponding xerogel were studied by Fourier transform infrared spectroscopy and coupled thermogravimetry/differential thermal analysis. The results showed that both the solutions mainly contain small Gd−Zr−O clusters obtained by the reaction of zirconium acetylacetonate with propionic acid during the precursor synthesis. The regular-shaped regions were probably formed by large Gd−Zr−O frameworks with a metastable structure in the solution with limited aging time. This study demonstrates the importance of the precise control of chemical reaction path to enhance the stability and homogeneity of the precursors of the CSD route. - Highlights: •We investigate microstructure

The epitaxial growth and interfacial strain study of VO{sub 2}/MgF{sub 2} (001) films by synchrotron based grazing incidence X-ray diffraction

Energy Technology Data Exchange (ETDEWEB)

Fan, L.L. [Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology, Yancheng 224051 (China); National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 (China); Chen, S. [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 (China); Liu, Q.H. [Science and Technology on Electro-optical Information Security Control Laboratory, Tianjin 300300 (China); Liao, G.M.; Chen, Y.L.; Ren, H. [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 (China); Zou, C.W., E-mail: czou@ustc.edu.cn [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 (China)

2016-09-05

High quality VO{sub 2} films with different thickness were epitaxially grown on MgF{sub 2} (001) substrates by oxide molecular beam epitaxy method. The evolution of interfacial strain was investigated by synchrotron based grazing incidence X-ray diffraction. By adjusting the incidence angles, the penetration depth of X-ray in VO{sub 2} film could be controlled and the thickness-depend lattice distortion in the epitaxial VO{sub 2} film was investigated. Due to the lattice mismatching, the pronounced tensile strain was observed in ultra-thin VO{sub 2} film. As the film thickness increasing, the interfacial strain relaxed gradually and became fully relaxed for thick VO{sub 2} films. Combined with the electric transport measurement, it was revealed that the phase transition temperature of ultra-thin VO{sub 2} film decreased greatly. The effect of interfacial strain induced phase transition modulation and the intrinsic mechanism was systematically discussed. - Highlights: • We prepared high quality VO{sub 2} epitaxial films on MgF{sub 2} (001) substrates by oxide molecular beam epitaxy method. • Synchrotron radiation grazing incidence X-ray diffraction was employed to detect evolution of strain along depth profile. • Based on a classic band structure model, the mechanism of strain controlled phase transition of VO{sub 2} was discussed.

Properties of epitaxial Ba2YCu3O7-x films on LaAlO3(001) grown using optimized conditions

International Nuclear Information System (INIS)

Siegal, M.P.; Phillips, J.M.; van Dover, R.B.; Tiefel, T.H.; Marshall, J.H.; Carlson, D.J.

1990-01-01

The superconducting and structural properties of Ba 2 YCu 3 O 7-x (BYCO) films on LaAlO 3 (001) substrates can be improved by carefully optimizing the post-deposition annealing parameters. Films are grown by codeposition of BaF 2 , Y, and Cu in the correct stoichiometric ratio to within 1% of 2:1:3. Compositional deviations greater than ± 1% result in the degradation of film quality. Important annealing parameters include the ambient, annealing temperature, oxidation temperature, and duration of the anneal. Films are characterized for epitaxial quality (χ min ), morphology, critical temperature (T c ), sharpness of the superconducting transition (ΔT), and critical current density (J c ). The optimized films have relatively smooth morphology with χ min c > 90 K, ΔT c > 10 6 A/cm 2 in essentially zero magnetic field at 77 K

Channel formation in single-monolayer pentacene thin film transistors

International Nuclear Information System (INIS)

Park, B-N; Seo, Soonjoo; Evans, Paul G

2007-01-01

The geometrical arrangement of single-molecule-high islands and the contact between them have large roles in determining the electrical properties of field effect transistors (FETs) based on monolayer-scale pentacene thin films. As the pentacene coverage increases through the submonolayer regime there is a percolation transition where islands come into contact and a simultaneous rapid onset of current. At coverages just above the percolation threshold, the electrical properties vary with geometrical changes in the contacts between the pentacene islands. At higher coverages, the FET mobility is much lower than the mobility measured by the van der Pauw method because of high contact resistances in monolayer-scale pentacene film devices. An increase in the van der Pauw mobility of holes as a function of pentacene coverage shows that second layer islands take part in charge transport

Ferroelectric properties of NaNbO3-BaTiO3 thin films deposited on SrRuO3/(001)SrTiO3 substrate by pulsed laser deposition

International Nuclear Information System (INIS)

Yamazoe, Seiji; Oda, Shinya; Sakurai, Hiroyuki; Wada, Takahiro; Adachi, Hideaki

2009-01-01

(NaNbO 3 ) 1-x (BaTiO 3 ) x (NN-xBT) thin films with low BaTiO 3 (BT) concentrations x (x=0.05 and 0.10) were fabricated on SrRuO 3 /(001)SrTiO 3 (SRO)/(001)STO) substrate by pulsed laser deposition (PLD). X-ray diffraction pattern (XRD) and transmission electron diffraction pattern (TED) showed that NN-0.10BT thin film was epitaxially grown on SRO/(001)STO substrate with a crystallographic relationship of [001] NN-xBT parallel [001] STO . From reciprocal space maps, the lattice parameters of the out-of-plane direction of NN-xBT thin films became larger with an increase in BT concentration, although the lattice parameter of the in-plane was hardly changed by the BT concentration. The value of relative dielectric constant ε r of the NN-xBT thin films were increased with BT concentration. The ε r and the dielectric loss tanδ of NN-0.10BT were 1220 and 0.02 at 1 kHz, respectively. The P-E hysteresis loops of the NN-xBT thin films showed clear ferroelectricity. Although the value of remanent polarization P r decreased with the BT concentration, the behaviors of ε r , P r , and coercive electric field E c of the NN-xBT thin films against the BT concentration accorded with those of NN-xBT ceramics, in which NN-0.10BT ceramics exhibited the largest piezoelectric property. Therefore, the NN-0.10BT thin film is expected to show high piezoelectricity. (author)

InGaAs/GaAs quantum-dot-quantum-well heterostructure formed by submonolayer deposition

DEFF Research Database (Denmark)

Xu, Zhangcheng; Leosson, K.; Birkedal, Dan

2003-01-01

-dot-quantum-well (QDQW) structure, by using high power PL and selective PL with excitation energies below the band gap of the GaAs barriers and temperature dependent PL. As the temperature is increased from 10 to 300 K, a narrowing of the full width at half-maximum at intermediate temperatures and a sigmoidal behaviour......Discrete emission lines from self-assembled InGaAs quantum dots (QDs) grown in the submonolayer (SML) deposition mode have been observed in micro-photoluminescence (PL) spectra at 10 K. For the first time, the SML-grown InGaAs/GaAs QD heterostructure is verified to be a quantum...

Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate

Energy Technology Data Exchange (ETDEWEB)

Liu, Ke; Ma, Wenquan, E-mail: wqma@semi.ac.cn; Huang, Jianliang; Zhang, Yanhua; Cao, Yulian; Huang, Wenjun; Luo, Shuai; Yang, Tao [Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A 35, Beijing 100083 (China)

2015-07-27

We report on photoluminescence (PL) emission with long wavelength for quantum structure by the sub-monolayer (SML) growth technique on GaAs (001) substrate. It is found that the PL emission wavelength can be controlled by controlling the SML InAs deposition amount. At 12 K, the PL peak position of the grown samples changes from about 1.66 to 1.78 μm. At 120 K, the PL emission of a sample reaches 1.91 μm. The physical mechanism responsible for the measured long wavelength PL emission may be related to strong In segregation and intermixing effects occurred in the structure grown by SML growth technique.

Submonolayer nucleation and growth and the initial stage of multilayer kinetic roughening during Ag/Ag (100) homoepitaxy

Energy Technology Data Exchange (ETDEWEB)

Zhang, C.

1996-08-01

A comprehensive Scanning Tunneling Microscopy (STM) study of submonolayer nucleation and growth of 2D islands in Ag/Ag(100) homoepitaxy for temperature between 295K and 370K is presented. The initial stages of multilayer kinetic roughening is also studied. Analysis of an appropriate model for metal (100) homoepitaxy, produces estimates of 350 meV for the terrace diffusion barrier, 400 meV for the adatom bond energy, and 25 meV for the additional Ehrlich-Schwoebel step-edge barrier.

Positron reemission: measurement of thin single crystal W(100) films to be used as transmission moderator or re-moderators

International Nuclear Information System (INIS)

Chen, D.M.; Lynn, K.G.; Pareja, R.; Nielsen, B.

1984-11-01

It has been shown that one can produce thin single crystal W films capable of reemitting positrons at a sufficiently high fraction to be used either as a moderator or as a re-moderator. Both the impurities and the defects could be removed by the appropriate cleaning and annealing procedures, and narrow beam emission could be attained when the films were cleaned. This technique would also be a good method for characterizing defect concentration at interfaces or in thin films

Multiple collinear magnetic arrangements in thin Mn films supported on Fe(001). Antiferromagnetic versus ferromagnetic behavior

International Nuclear Information System (INIS)

Martinez, E.; Vega, A.; Robles, R.; Vazquez de Parga, A.L.

2005-01-01

We present a theoretical study of the magnetic properties of thin Mn films of 6 and 7 monolayers supported on Fe(001). The ab-initio tight binding linear muffin tin orbital (TB-LMTO) method was used to investigate the competition between ferromagnetic (F) and antiferromagnetic (AF) couplings within the system. We found several collinear magnetic solutions that may coexist at room temperature. The most stable configurations are characterized by AF coupling between the surface and subsurface Mn layers together with F coupling between Mn and Fe at the interface. The ground state arrangements for the 6 and 7 Mn films display opposite sign of the surface magnetic moment relative to the Fe substrate. The implications of these results in the possible onset of non-collinear magnetism when a step is present at the interface are discussed in comparison with Cr/Fe systems where non-collinear magnetism has been recently reported

Large modification in insulator-metal transition of VO{sub 2} films grown on Al{sub 2}O{sub 3} (001) by high energy ion irradiation in biased reactive sputtering

Energy Technology Data Exchange (ETDEWEB)

Azhan, Nurul Hanis; Okimura, Kunio, E-mail: okifn@keyaki.cc.u-tokai.ac.jp [Graduate School of Science and Technology, Tokai University, Hiratsuka 259-1292 (Japan); Ohtsubo, Yoshiyuki; Kimura, Shin-ichi [Graduate School of Frontier Biosciences, Osaka University, Suita 565-0871 (Japan); Zaghrioui, Mustapha; Sakai, Joe [GREMAN, UMR 7347 CNRS, Université François Rabelais de Tours, Parc de Grandmont, 37200 Tours (France)

2016-02-07

High energy ion irradiation in biased reactive sputtering enabled significant modification of insulator-metal transition (IMT) properties of VO{sub 2} films grown on Al{sub 2}O{sub 3} (001). Even at a high biasing voltage with mean ion energy of around 325 eV induced by the rf substrate biasing power of 40 W, VO{sub 2} film revealed low IMT temperature (T{sub IMT}) at 309 K (36 °C) together with nearly two orders magnitude of resistance change. Raman measurements from −193 °C evidenced that the monoclinic VO{sub 2} lattice begins to transform to rutile-tetragonal lattice near room temperature. Raman spectra showed the in-plane compressive stress in biased VO{sub 2} films, which results in shortening of V–V distance along a-axis of monoclinic structure, a{sub M}-axis (c{sub R}-axis) and thus lowering the T{sub IMT}. In respect to that matter, significant effects in shortening the in-plane axis were observed through transmission electron microscopy observations. V2p{sub 3/2} spectra from XPS measurements suggested that high energy ion irradiation also induced oxygen vacancies and resulted for an early transition onset and rather broader transition properties. Earlier band gap closing against the temperature in VO{sub 2} film with higher biasing power was also probed by ultraviolet photoelectron spectroscopy. Present results with significant modification of IMT behavior of films deposited at high-energy ion irradiation with T{sub IMT} near the room temperature could be a newly and effective approach to both exploring mechanisms of IMT and further applications of this material, due to the fixed deposition conditions and rather thicker VO{sub 2} films.

Submonolayer Quantum Dots for High Speed Surface Emitting Lasers

Directory of Open Access Journals (Sweden)

Zakharov ND

2007-01-01

Full Text Available AbstractWe report on progress in growth and applications of submonolayer (SML quantum dots (QDs in high-speed vertical-cavity surface-emitting lasers (VCSELs. SML deposition enables controlled formation of high density QD arrays with good size and shape uniformity. Further increase in excitonic absorption and gain is possible with vertical stacking of SML QDs using ultrathin spacer layers. Vertically correlated, tilted or anticorrelated arrangements of the SML islands are realized and allow QD strain and wavefunction engineering. Respectively, both TE and TM polarizations of the luminescence can be achieved in the edge-emission using the same constituting materials. SML QDs provide ultrahigh modal gain, reduced temperature depletion and gain saturation effects when used in active media in laser diodes. Temperature robustness up to 100 °C for 0.98 μm range vertical-cavity surface-emitting lasers (VCSELs is realized in the continuous wave regime. An open eye 20 Gb/s operation with bit error rates better than 10−12has been achieved in a temperature range 25–85 °Cwithout current adjustment. Relaxation oscillations up to ∼30 GHz have been realized indicating feasibility of 40 Gb/s signal transmission.

Structure induced magnetic anisotropy behavior in Co/GaAs(001) films

Science.gov (United States)

Blundell, S. J.; Gester, M.; Bland, J. A. C.; Daboo, C.; Gu, E.; Baird, M. J.; Ives, A. J. R.

1993-05-01

Epitaxial Co has been grown on GaAs(001) and studied by both low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED), and by the magneto-optic Kerr effect (MOKE) and polarized neutron reflection (PNR). Three samples were fabricated using different growth procedures: (1) ``interrupted'' growth (including an anneal); (2) and (3) continuous growth of similar thicknesses. For sample 1, RHEED patterns indicate an initial growth in the bcc phase followed by a relaxation into a distorted single phase at completion of growth, whereas samples 2 and 3 showed a multicrystalline structure after growth. LEED patterns were used to check the existence of the 2×4 reconstruction patterns before growth, but no LEED patterns could be obtained after more than 2 Å Co was deposited, in contrast to the RHEED patterns which remained visible throughout the growth. Structural analysis of the completed films indicates the formation of a ˜10 Å CoO layer on the Co/air interface, and gives thicknesses for magnetic material of (1) 30 Å and (2) 80 Å. Sample 1 showed a dominant fourfold magnetic anisotropy with the easy axis parallel to the (100) direction and with a strength 2K4/M of ˜0.5 kOe, smaller in magnitude than that reported for bcc films on GaAs(110) but along the same axis [G. A. Prinz et al., J. Appl. Phys. 57, 3672 (1985)]. However, samples 2 and 3 showed only a large uniaxial anisotropy along the (110) direction of strength 2K1/M of ˜1.5 kOe and ˜2.5 kOe, respectively, similar in magnitude to those previously observed [G. A. Prinz et al., J. Appl. Phys. 57, 3676 (1985)]. We attribute the origin of the contrasting magnetic anisotropy behavior observed to the differences in final structure.

Topological crystalline insulator PbxSn1-xTe thin films on SrTiO3 (001 with tunable Fermi levels

Directory of Open Access Journals (Sweden)

Hua Guo

2014-05-01

Full Text Available In this letter, we report a systematic study of topological crystalline insulator PbxSn1-xTe (0 < x < 1 thin films grown by molecular beam epitaxy on SrTiO3(001. Two domains of PbxSn1-xTe thin films with intersecting angle of α ≈ 45° were confirmed by reflection high energy diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES. ARPES study of PbxSn1-xTe thin films demonstrated that the Fermi level of PbTe could be tuned by altering the temperature of substrate whereas SnTe cannot. An M-shaped valance band structure was observed only in SnTe but PbTe is in a topological trivial state with a large gap. In addition, co-evaporation of SnTe and PbTe results in an equivalent variation of Pb concentration as well as the Fermi level of PbxSn1-xTe thin films.

Sub-monolayer growth of titanium, cobalt, and palladium on epitaxial graphene

Energy Technology Data Exchange (ETDEWEB)

Sokolova, Anastasia; Kilchert, Franziska; Schneider, M. Alexander [Lehrstuhl fuer Festkoerperphysik, Friedrich-Alexander Universitaet Erlangen-Nuernberg (FAU), Erlangen (Germany); Link, Stefan; Stoehr, Alexander; Starke, Ulrich [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany)

2017-11-15

We deposited metals (Ti, Co, Pd) typically used as seed layers for contacts on epitaxial graphene on SiC(0001) and studied the early stages of growth in the sub-monolayer regime by Scanning Tunneling Microscopy (STM). All three metals do not wet the substrate and Ostwalt ripening occurs at temperatures below 400 K. The analysis of the epitaxial orientation of the metal adislands revealed their specific alignment to the graphene lattice. It is found that the apparent height of the islands as measured by STM strongly deviates from their true topographic height. This is interpreted as an indication of the presence of scattering processes within the metal particles that increase the transparency of the metal-graphene interface for electrons. Even large islands are easily picked up by the tip of the STM allowing insight into the bonding between metal island and graphene surface and into mechanisms leading to metal intercalation. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

A flexible, high-performance magnetoelectric heterostructure of (001) oriented Pb(Zr0.52Ti0.48)O3 film grown on Ni foil

Science.gov (United States)

Palneedi, Haribabu; Yeo, Hong Goo; Hwang, Geon-Tae; Annapureddy, Venkateswarlu; Kim, Jong-Woo; Choi, Jong-Jin; Trolier-McKinstry, Susan; Ryu, Jungho

2017-09-01

In this study, a flexible magnetoelectric (ME) heterostructure of PZT/Ni was fabricated by depositing a (001) oriented Pb(Zr0.52Ti0.48)O3 (PZT) film on a thin, flexible Ni foil buffered with LaNiO3/HfO2. Excellent ferroelectric properties and large ME voltage coefficient of 3.2 V/cmṡOe were realized from the PZT/Ni heterostructure. The PZT/Ni composite's high performance was attributed to strong texturing of the PZT film, coupled with the compressive stress in the piezoelectric film. Besides, reduced substrate clamping in the PZT film due to the film on the foil structure and strong interfacial bonding in the PZT/LaNiO3/HfO2/Ni heterostructure could also have contributed to the high ME performance of PZT/Ni.

Phase-coherent electron transport in (Zn, Al)Ox thin films grown by atomic layer deposition

Science.gov (United States)

Saha, D.; Misra, P.; Ajimsha, R. S.; Joshi, M. P.; Kukreja, L. M.

2014-11-01

A clear signature of disorder induced quantum-interference phenomena leading to phase-coherent electron transport was observed in (Zn, Al)Ox thin films grown by atomic layer deposition. The degree of static-disorder was tuned by varying the Al concentration through periodic incorporation of Al2O3 sub-monolayer in ZnO. All the films showed small negative magnetoresistance due to magnetic field suppressed weak-localization effect. The temperature dependence of phase-coherence length ( l φ ∝ T - 3 / 4 ), as extracted from the magnetoresistance measurements, indicated electron-electron scattering as the dominant dephasing mechanism. The persistence of quantum-interference at relatively higher temperatures up to 200 K is promising for the realization of ZnO based phase-coherent electron transport devices.

Growth of metastable fcc Mn thin film on GaAs(001) and its electronic structure studied by photoemission with synchrotron radiation

International Nuclear Information System (INIS)

Chen Yan; Dong Guosheng; Zhang Ming

1995-01-01

The epitaxial growth of metastable fcc Mn thin films on GaAs(001) surface has been achieved at a substrate temperature of 400 K. The development of the fcc Mn thin films as a function of coverage is studied by photoemission with synchrotron radiation. The electron density of states below the Fermi edge of the fcc Mn phase is measured. A significant difference of the electronic structures is observed between the metastable fcc Mn phase and the thermodynamically stable α-Mn phase. Possible mechanisms are proposed to interpret the experimental result

Influence of RF power on the properties of sputtered ZnO:Al thin films

Energy Technology Data Exchange (ETDEWEB)

Antony, Aldrin; Carreras, Paz; Keitzl, Thomas; Roldan, Ruben; Nos, Oriol; Frigeri, Paolo; Asensi, Jose Miguel; Bertomeu, Joan [Grup d' Energia Solar, Universitat de Barcelona (Spain)

2010-07-15

Transparent conducting, aluminium doped zinc oxide thin films (ZnO:Al) were deposited by radio frequency (RF) magnetron sputtering. The RF power was varied from 60 to 350 W whereas the substrate temperature was kept at 160 C. The structural, electrical and optical properties of the as-deposited films were found to be influenced by the deposition power. The X-ray diffraction analysis showed that all the films have a strong preferred orientation along the [001] direction. The crystallite size was varied from 14 to 36 nm, however no significant change was observed in the case of lattice constant. The optical band gap varied in the range 3.44-3.58 eV. The lowest resistivity of 1.2 x 10{sup -3}{omega} cm was shown by the films deposited at 250 W. The mobility of the films was found to increase with the deposition power. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Chemically-induced liquid film migration with low lattice diffusivity relative to the migration rate in Mo-Ni-(W)

International Nuclear Information System (INIS)

Lee, K.R.

1992-01-01

This paper reports that when a 90Mo-10Ni alloy (by wt) liquid phase sintered at 1400 degrees C is heat-treated at 1400 degrees C after replacing the matrix with a melt of 44Ni-34Mo-22W (by wt), the liquid films between the grains migrate, leaving behind an Mo alloy enriched with W. The ratio of the lattice diffusivity of W in Mo, D, to the initial migration velocity, v. (D/v) is estimated to be between 0.03 and 0.18 angstrom. Hence it appears that there is no lattice diffusion of W ahead of the migrating liquid film, and is such a case the driving force has been suggested to be the chemical free energy. But the observed v is approximately same as that to be expected if the driving force is assumed to be diffusional coherency strain energy. Likewise, a previous study of den Broeder and Nakahara shows that the rate of chemically-induced grain boundary migration in Cu-Ni shows a smooth variation with temperature as D/v decreases from values much larger than the interatomic spacing to values much smaller with decreasing temperature. The coherency strain energy thus appears to be a general driving force for the migration even when the apparent diffusion length indicated by D/v is smaller than the interatomic spacing

Structure and cation distribution of (Mn0.5Zn0.5)Fe2O4 thin films on SrTiO3(001)

Science.gov (United States)

Welke, M.; Brachwitz, K.; Lorenz, M.; Grundmann, M.; Schindler, K.-M.; Chassé, A.; Denecke, R.

2017-06-01

A comprehensive study on growth of ferrimagnetic manganese zinc ferrite (Mn0.5Zn0.5Fe2O4) films on single crystalline strontium titanate(001) (SrTiO3) substrates was carried out. Under the optimized conditions, a thin film with a layer thickness of 200 nm was deposited, and the structural properties were investigated. Contrary to data published in literature, no buffer layer was necessary to achieve epitaxial growth of a poorly lattice-matched layer. This was confirmed for Mn0.5Zn0.5Fe2O4(001) on SrTiO3(001) by x-ray diffraction and the adjoined phi scans, which also revealed a lattice compression of 1.2% of the manganese zinc ferrite film in the out-of-plane direction. Using x-ray photoelectron spectroscopy, the near surface stoichiometry of the film could be shown to agree with the intended one within the uncertainty of the method. X-ray absorption spectroscopy showed an electronic structure close to that published for bulk samples. Additional x-ray magnetic circular dichroism investigations were performed to answer detailed structural questions by a comparison of experimental data with the calculated ones. The calculations took into account ion sites (tetrahedral vs. octahedral coordination) as well as the charge of Fe ions (Fe2+ vs. Fe3+). Contrary to the expectation for a perfect normal spinel that only Fe3+ ions are present in octahedral sites, hints regarding the presence of additional Fe2+ in octahedral sites as well as Fe3+ ions in tetrahedral sites have been obtained. Altogether, the layer could be shown to be mostly in a normal spinel configuration.

Second-harmonic generation from sub-monolayer molecular adsorbates using a c-w diode laser: Maui surface experiment

International Nuclear Information System (INIS)

Boyd, G.T.; Shen, Y.R.; Hansch, T.W.

1985-06-01

Optical second-harmonic generation (SHG) can be an extremely sensitive tool for surface studies. The technique is capable of probing adsorbed molecules at various interfaces. It is based on the idea that SHG is forbidden in a medium with inversion symmetry, but necessarily allowed at a surface. To see such a surface nonlinear optical effect, high laser intensity is often needed. Thus, in the experiments reported so far, pulsed lasers were used exclusively. From the consideration for practical applications, however, the technique would look much more attractive if the bulky pulsed laser can be replaced by a simple inexpensive c-w diode laser. This paper describes the first demonstration of surface SHG with a c-w laser. 3 refs., 1 fig

Surface morphology of vacuum-evaporated pentacene film on Si substrate studied by in situ grazing-incidence small-angle X-ray scattering: I. The initial stage of formation of pentacene film

Science.gov (United States)

Hirosawa, Ichiro; Watanabe, Takeshi; Koganezawa, Tomoyuki; Kikuchi, Mamoru; Yoshimoto, Noriyuki

2018-03-01

The progress of the surface morphology of a growing sub-monolayered pentacene film on a Si substrate was studied by in situ grazing-incidence small angle X-ray scattering (GISAXS). The observed GISAXS profiles did not show sizes of pentacene islands but mainly protuberances on the boundaries around pentacene film. Scattering of X-ray by residual pits in the pentacene film was also detected in the GISAXS profiles of an almost fully covered film. The average radius of pentacene protuberances increased from 13 to 24 nm as the coverage increased to 0.83 monolayer, and the most frequent radius was almost constant at approximately 9 nm. This result suggests that the population of larger protuberances increase with increasing lengths of boundaries of the pentacene film. It can also be considered that the detected protuberances were crystallites of pentacene, since the average size of protuberances was nearly equal to crystallite sizes of pentacene films. The almost constant characteristic distance of 610 nm and amplitudes of pair correlation functions at low coverages suggest that the growth of pentacene films obeyed the diffusion-limited aggregation (DLA) model, as previously reported. It is also considered that the sites of islands show a triangular distribution for small variations of estimated correlation distances.

Finite Size Effects in Submonolayer Catalysts Investigated by CO Electrosorption on PtsML/Pd(100).

Science.gov (United States)

Yuan, Qiuyi; Doan, Hieu A; Grabow, Lars C; Brankovic, Stanko R

2017-10-04

A combination of scanning tunneling microscopy, subtractively normalized interfacial Fourier transform infrared spectroscopy (SNIFTIRS), and density functional theory (DFT) is used to quantify the local strain in 2D Pt clusters on the 100 facet of Pd and its effect on CO chemisorption. Good agreement between SNIFTIRS experiments and DFT simulations provide strong evidence that, in the absence of coherent strain between Pt and Pd, finite size effects introduce local compressive strain, which alters the chemisorption properties of the surface. Though this effect has been widely neglected in prior studies, our results suggest that accurate control over cluster sizes in submonolayer catalyst systems can be an effective approach to fine-tune their catalytic properties.

Some studies of lead and iron adsorption on the W(100) surface by field emission microscopy

International Nuclear Information System (INIS)

Jones, J.P.; Roberts, E.W.

1978-01-01

The behaviour of lead and iron adsorbed on the W(100) surface has been studied by probe hole field emission microscopy, field desorption, and by measurement of the total energy distribution (TED) of field-emitted electrons. Lead adsorbed at 300 K which reduces the work function of W(100) can be completely removed at 78 K by field desorption below 3.2 V A -1 and the resulting surface has both the work function and TED, which are characteristic of the clean plane. Condensation at 800 K followed by field desorption, results in a plane surface of work function 4.17 eV and an altered TED. This effect is attributed to the microfacetting, which is observed by LEED. The Swanson peak in the W(100) TED which is removed by submonolayer amounts of lead re-emerges at monolayer coverage when lead adopts the (1 X 1) structure. Such behaviour is consistent with the model proposed by Kar and Soven. A spectral peak observed when lead is adsorbed on the reconstructed W(100) surface is thought to derive for the atomic 1 D state. Adsorption of iron on a W(100) surface reduces phi considerably due to dipole formation and efficiently quenches the Swanson peak. (Auth.)

Bond-length strain in buried Ga1-xInxAs thin-alloy films grown coherently on InP(001)

International Nuclear Information System (INIS)

Woicik, J.C.; Gupta, J.A.; Watkins, S.P.; Crozier, E.D.

1998-01-01

The bond lengths in a series of strained, buried Ga 1-x In x As thin-alloy films grown coherently on InP(001) have been determined by high-resolution extended x-ray absorption fine-structure measurements. Comparison with a random-cluster calculation demonstrates that the external in-plane epitaxial strain imposed by pseudomorphic growth opposes the natural bond-length distortions due to alloying.copyright 1998 American Institute of Physics

Orestes bojownikiem ruchu oporu, czyli mit Atrydów w filmie "Podróż komediantów" Theo Angelopoulosa

Directory of Open Access Journals (Sweden)

Iga Łomanowska

2016-12-01

Full Text Available Orestes as a resistance fighter, or the myth of the Atreides in Theo Angelopoulos’s film The travelling players The paper examines the use of the Atreides myth in Theo Angelopoulos’s film The travelling players (1975 in the context of the director’s interpretation of the phenomenon of myth. Angelopoulos treated myth as a set of archetypical situations and patterns of conduct constantly reproduced in the history of the world. He intertwined elements of classical stories with the history of Greece and the Byzantine tradition, thus showing their universal character. In The travelling players, Angelopoulos used the story of betrayed and murdered Agamemnon, who is avenged by his children: Orestes and Electra, but he moved it into modern times, setting the film in Greece of the 1940s and 1950s. The myth is reproduced with modulations: the most important events take place as a result of interventions of History, not fate or decisions of the gods. Moreover, the characters’ conflicts are enriched with a political dimension, as Angelopolous portrays the discord between their ideological stances. But the members of the acting company are as helpless in the face of events as the family of the king of Argos.   Orestes bojownikiem ruchu oporu, czyli mit Atrydów w filmie Podróż komediantów Theo Angelopoulosa Artykuł jest analizą sposobu wykorzystania przez Theo Angelopoulosa mitu Atrydów w filmie Podróż komediantów (1975 w kontekście dokonanej przez niego interpretacji zjawiska mitu. Grecki reżyser traktował mit jako zbiór archetypicznych sytuacji i wzorów postępowania odtwarzanych nieustannie w dziejach świata. Elementy antycznych opowieści splatał w filmach z historią Grecji i tradycją bizantyjską, ujawniając ich uniwersalny charakter. W Podróży komediantów wykorzystał historię zdradzonego i zamordowanego Agamemnona, który zostaje pomszczony przez swoje dzieci: Orestesa i Elektrę, ale przeniósł ją w czasy wsp

Temperature dependence of liquid lithium film formation and deuterium retention on hot W samples studied by LID-QMS. Implications for future fusion reactors

Science.gov (United States)

de Castro, A.; Sepetys, A.; González, M.; Tabarés, F. L.

2018-04-01

Liquid metal (LM) divertor concepts explore an alternative solution to the challenging power/particle exhaust issues in future magnetic fusion reactors. Among them, lithium (Li) is the most promising material. Its use has shown important advantages in terms of improved H-mode plasma confinement and heat handling capabilities. In such scenario, a possible combination of tungsten (W) on the first wall and liquid Li on the divertor could be an acceptable solution, but several issues related to material compatibility remain open. In particular, the co-deposition of Li and hydrogen isotopes on W components could increase the associated tritium retention and represent a safety risk, especially if these co-deposits can uncontrollably grow in remote/plasma shadowed zones of the first wall. In this work, the retention of Li and deuterium (D) on tungsten at different surface temperature (200 °C-400 °C) has been studied by exposing W samples to Li evaporation under several D2 gaseous environments. Deuterium retention in the W-Li films has been quantified by using laser induced desorption-mass spectrometry (LID-QMS). Additional techniques as thermal desorption spectroscopy, secondary ion mass spectrometry, profilemetry and flame atomic emission spectroscopy were implemented to corroborate the retention results and for the qualitative and quantitative characterization of the films. The results showed a negligible (below LID sensibility) D uptake at T surface  =  225 °C, when the W-Li layer is exposed to simultaneous Li evaporation and D2 gas exposition (0.67 Pa). Pre-lithiated samples were also exposed to higher D2 pressures (133.3 Pa) at different temperatures (200 °C-400 °C). A non-linear drastic reduction in the D retention with increasing temperatures was found on the W-Li films, presenting a D/Li atomic ratio at 400 °C lower than 0.1 at.% on a thin film of  ≈100 nm thick. These results bode well (in terms of tritium inventory) for the potential

Characterization of submonolayer film composed of soft-landed copper nanoclusters on HOPG

Energy Technology Data Exchange (ETDEWEB)

Mondal, Shyamal, E-mail: shyamal.mondal@saha.ac.in; Das, Pabitra; Chowdhury, Debasree; Bhattacharyya, S. R. [Saha Institute of Nuclear Physics, 1/AF Bidhan Nagar, Kolkata-700 064 (India)

2015-06-24

Preformed Copper nanoclusters are deposited on highly oriented pyrolytic graphite (HOPG) at very low energy. For the study of chemical composition X-ray Photoelectron Spectroscopy (XPS) is performed for a wide range of binding energy without exposing the sample in the ambient. Morphological aspects of the supported clusters are characterized employing high resolution scanning electron microscope (SEM). Different types of morphology are observed depending on the nature of the substrate surface. Big fractal islands are formed on terraces while at the step edges small islands are found to form. Ex-situ cathodoluminescence (CL) measurement shows peak at 558 nm wavelength which corresponds to the band gap of 2.22 eV which is due to Cu{sub 2}O nanocrystals formed due to oxidation of the deposited film in ambient.

Role of Transient Mobility on Submonolayer Island Growth: Extensions and Testing

Science.gov (United States)

Morales Cifuentes, Josue; Einstein, Theodore; Pimpinelli, Alberto

In studies of epitaxial growth a major goal is assessing the smallest stable cluster (i + 1 monomers, with i the critical nucleus size), by analyzing the capture zone distribution (CZD) or the scaling of incident flux F to the density of stable islands N (N ~Fα , with α the growth exponent). As noted in the previous talk, the GWD has well described the data in several experiments, including submonolayer para-hexaphenyl (6P) on amorphous mica (i ~ 3). Different scaling (Fα) for 6P at (small) large F is attributed to (DLA) ALA dynamics, i.e. i = (5) 7 +/- 2. Our recent theoretical work considered monomers propagating ballistically before thermalizing or attaching to islands, leading to scaling, non-monotonic crossover, and activation energies that account for the data and reconciling the values of i. We present applications to other experimental systems: 6P on SiO2 and pentacene (5A) on amorphous mica. We describe useful simplifying approximations, and preliminary kinetic Monte Carlo simulations including transient effects on growth. Work at UMD supported by NSF CHE 13-05892.

Development of Anti-Insect Microencapsulated Polypropylene Films Using a Large Scale Film Coating System.

Science.gov (United States)

Song, Ah Young; Choi, Ha Young; Lee, Eun Song; Han, Jaejoon; Min, Sea C

2018-04-01

Films containing microencapsulated cinnamon oil (CO) were developed using a large-scale production system to protect against the Indian meal moth (Plodia interpunctella). CO at concentrations of 0%, 0.8%, or 1.7% (w/w ink mixture) was microencapsulated with polyvinyl alcohol. The microencapsulated CO emulsion was mixed with ink (47% or 59%, w/w) and thinner (20% or 25%, w/w) and coated on polypropylene (PP) films. The PP film was then laminated with a low-density polyethylene (LDPE) film on the coated side. The film with microencapsulated CO at 1.7% repelled P. interpunctella most effectively. Microencapsulation did not negatively affect insect repelling activity. The release rate of cinnamaldehyde, an active repellent, was lower when CO was microencapsulated than that in the absence of microencapsulation. Thermogravimetric analysis exhibited that microencapsulation prevented the volatilization of CO. The tensile strength, percentage elongation at break, elastic modulus, and water vapor permeability of the films indicated that microencapsulation did not affect the tensile and moisture barrier properties (P > 0.05). The results of this study suggest that effective films for the prevention of Indian meal moth invasion can be produced by the microencapsulation of CO using a large-scale film production system. Low-density polyethylene-laminated polypropylene films printed with ink incorporating microencapsulated cinnamon oil using a large-scale film production system effectively repelled Indian meal moth larvae. Without altering the tensile and moisture barrier properties of the film, microencapsulation resulted in the release of an active repellent for extended periods with a high thermal stability of cinnamon oil, enabling commercial film production at high temperatures. This anti-insect film system may have applications to other food-packaging films that use the same ink-printing platform. © 2018 Institute of Food Technologists®.

Plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy in the presence of the Sb surfactant

International Nuclear Information System (INIS)

Bolkhovityanov, Yu. B.; Deryabin, A. S.; Gutakovskii, A. K.; Kolesnikov, A. V.; Sokolov, L. V.

2007-01-01

Plastically relaxed GeSi films with the Ge fraction equal to 0.29-0.42 and thickness as large as 0.5 μm were grown on Si (001) substrates using the low-temperature (350 deg. C) buffer Si layer and Sb as a surfactant. It is shown that introduction of Sb that smoothens the film surface at the stage of pseudomorphic growth lowers the density of threading dislocations in the plastically relaxed heterostructure by 1-1.5 orders of magnitude and also reduces the final roughness of the surface. The root-mean-square value of roughness smaller than 1 nm was obtained for a film with the Ge content of 0.29 and the density of threading dislocations of about 10 6 cm -2 . It is assumed that the effect of surfactant is based on the fact that the activity of surface sources of dislocations is reduced in the presence of Sb

Underpotential deposition-mediated layer-by-layer growth of thin films

Science.gov (United States)

Wang, Jia Xu; Adzic, Radoslav R.

2015-05-19

A method of depositing contiguous, conformal submonolayer-to-multilayer thin films with atomic-level control is described. The process involves the use of underpotential deposition of a first element to mediate the growth of a second material by overpotential deposition. Deposition occurs between a potential positive to the bulk deposition potential for the mediating element where a full monolayer of mediating element forms, and a potential which is less than, or only slightly greater than, the bulk deposition potential of the material to be deposited. By cycling the applied voltage between the bulk deposition potential for the mediating element and the material to be deposited, repeated desorption/adsorption of the mediating element during each potential cycle can be used to precisely control film growth on a layer-by-layer basis. This process is especially suitable for the formation of a catalytically active layer on core-shell particles for use in energy conversion devices such as fuel cells.

How metal films de-wet substrates-identifying the kinetic pathways and energetic driving forces

International Nuclear Information System (INIS)

McCarty, Kevin F; Hamilton, John C; Thuermer, Konrad; Jones, Frank; Talin, A Alec; Bartelt, Norman C; Sato, Yu; K Schmid, Andreas; Saa, Angela; Figuera, Juan de la; Stumpf, Roland

2009-01-01

We study how single-crystal chromium films of uniform thickness on W(110) substrates are converted to arrays of three-dimensional (3D) Cr islands during annealing. We use low-energy electron microscopy (LEEM) to directly observe a kinetic pathway that produces trenches that expose the wetting layer. Adjacent film steps move simultaneously uphill and downhill relative to the staircase of atomic steps on the substrate. This step motion thickens the film regions where steps advance. Where film steps retract, the film thins, eventually exposing the stable wetting layer. Since our analysis shows that thick Cr films have a lattice constant close to bulk Cr, we propose that surface and interface stress provide a possible driving force for the observed morphological instability. Atomistic simulations and analytic elastic models show that surface and interface stress can cause a dependence of film energy on thickness that leads to an instability to simultaneous thinning and thickening. We observe that de-wetting is also initiated at bunches of substrate steps in two other systems, Ag/W(110) and Ag/Ru(0001). We additionally describe how Cr films are converted into patterns of unidirectional stripes as the trenches that expose the wetting layer lengthen along the W[001] direction. Finally, we observe how 3D Cr islands form directly during film growth at elevated temperature. The Cr mesas (wedges) form as Cr film steps advance down the staircase of substrate steps, another example of the critical role that substrate steps play in 3D island formation.

Ab-initio study of the magneto-optical properties of the ultrathin films of Fe{sub n}/Au(001)

Energy Technology Data Exchange (ETDEWEB)

Boukelkoul, Mebarek, E-mail: boukelkoul_mebarek@yahoo.fr [Laboratoire de Physique Quantique et Systèmes Dynamiques, Faculté des sciences, Université Sétif1, Sétif, 19000 Algeria (Algeria); Haroun, Mohamed Fahim [Laboratoire de Physique Quantique et Systèmes Dynamiques, Faculté des sciences, Université Sétif1, Sétif, 19000 Algeria (Algeria); Haroun, Abdelhalim [Laboratoire de Physique Quantique et Systèmes Dynamiques, Faculté des sciences, Université Sétif1, Sétif, 19000 Algeria (Algeria); IPCMS, UMR 7504 CNRS-UNISTRA, 23 Rue du Loess, Strasbourg, 67034 France (France)

2016-12-15

With the aim of understand the microscopic origin of the magneto-optical response in the Fe ultrathin films, we used the first principle full-relativistic Spin-Polarized Relativistic Linear Muffin-Tin Orbitals with Atomic Sphere Approximation. We performed an ab-initio study of the structural, magnetic and magneto-optical properties of Fe deposited on semi-infinite Au(001). The structure and growth of the film leads to a pseudomorphic body centered tetragonal structure with tetragonality ratio c/a=1.62, and the pseudomorphic growth is found to be larger than 3 monolayers. The magnetic study revealed a ferromagnetic phase with a large magnetic moment compared to the bulk one. The magneto-optical response is calculated via the polar magneto-optical Kerr effect over a photon energy range up to 10 eV. The most important features of the Kerr rotation spectra are interpreted trough the interband transitions between localized states.

Surface morphology and in-plane-epitaxy of SmBa2Cu3O7-δ films on SrTiO3 (001) substrates studied by STM and grazing incidence x-ray diffraction

DEFF Research Database (Denmark)

Jiang, Q.D.; Smilgies, D.M.; Feidenhans'l, R.

1996-01-01

The surface morphology and in-plane epitaxy of thin films of SmBa(2)Cu3O(7-delta) (Sm-BCO) grown on SrTiO3 (001) substrates with various thicknesses have been investigated by scanning tunneling microscopy (STM) and grazing incidence x-ray diffraction (GIXRD). As revealed by GIXRD, SmBCO films as ...... films above h(c2), introduction of screw dislocations leads to spiral growth.......The surface morphology and in-plane epitaxy of thin films of SmBa(2)Cu3O(7-delta) (Sm-BCO) grown on SrTiO3 (001) substrates with various thicknesses have been investigated by scanning tunneling microscopy (STM) and grazing incidence x-ray diffraction (GIXRD). As revealed by GIXRD, SmBCO films...... substrate. Three different types of surface morphology were observed by STM with increasing film thickness h: a) 2D growth for hh(c2). With GIXRD, a density modulation is observed in the films with a thickness below h(c2). For thicker...

Non-equibiaxial deformation of W/Cu nanocomposite thin films on stretchable substrate: Effect of loading path

Energy Technology Data Exchange (ETDEWEB)

Renault, Pierre-Olivier, E-mail: pierre.olivier.renault@univ-poitiers.fr [Institut Pprime, CNRS-Université de Poitiers, Bd Marie et Pierre Curie, 86962 Futuroscope (France); Le Bourhis, Eric; Goudeau, Philippe [Institut Pprime, CNRS-Université de Poitiers, Bd Marie et Pierre Curie, 86962 Futuroscope (France); Thiaudière, Dominique [Synchrotron SOLEIL, L' Orme des Merisiers, 91192 Gif sur Yvette (France); Faurie, Damien [LSPM, CNRS-Université Paris13, 93430 Villetaneuse (France)

2013-12-31

In situ biaxial tensile tests were carried out on W/Cu nanocomposite thin films deposited on a polyimide cruciform substrate. A biaxial testing machine developed on the DiffAbs beamline at the French SOLEIL synchrotron allows for scrutinizing the mechanical behaviour of crystalline thin films at the micro-scale and the macro-scale using simultaneously synchrotron X-ray diffraction and digital image correlation techniques. Both strain analyses have been performed for two controlled non-equibiaxial loading paths: loading ratios of 0.8 and 0.33. The mechanical response is analysed and compared for the two loading ratios. - Highlights: • Non-equibiaxial tensile tests are performed on metallic film-substrate composite. • Two different loading paths have been performed. • Applied strains are measured in situ by X-ray diffraction and image correlation. • Lattice strain and elastic stress–true strain curves are plotted. • The different mechanical behaviours in the two directions of applied load are revealed.

High thermal stability in W/MgO/CoFeB/W/CoFeB/W stacks via ultrathin W insertion with perpendicular magnetic anisotropy

Energy Technology Data Exchange (ETDEWEB)

Liu, Yi; Yu, Tao [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Zhu, Zhengyong; Zhong, Huicai [Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Khamis, Khamis Masoud [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Zhu, Kaigui, E-mail: kgzhu@buaa.edu.cn [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Key Laboratory of Micro-Nano Measurement-Manipulation and Physics, Ministry of Education, Beihang University, Beijing 100191 (China)

2016-07-15

The perpendicular magnetic anisotropy (PMA) of a series of top MgO/CoFeB/W stacks were studied. In these stacks, the thickness of CoFeB is limited in a range of 1.1–2.2 nm. It was found that the stack can still maintain PMA in a 1.9 nm thick CoFeB free layer. Besides, we investigated the thermal stability factor ∆ of a spin transfer torque magnetic random access memory (STT-MRAM) by inserting an ultra-thin W film of 0.8 nm between two CoFeB films. The result shows a clear PMA behavior for the samples with CoFeB thickness up to 2.5 nm, and an in-plane magnetic anisotropy (IMA) when the CoFeB is thicker than 2.5 nm. Moreover, the thermal stability factor ∆ of the CoFeB stack with W insertion is about 132 for a 50 nm size STT-MRAM device, which is remarkably improved compared to 112 for a sample without W insertion. Our results represent an alternative way to realize the endurance at high annealing temperature, high-density and high ∆ in STT-MRAM device by ultra-thin W insertion. - Highlights: • The MgO/CoFeB/W multilayer can still maintain PMA in a CoFeB thickness of 1.9 nm. • The sample with 2.5 nm thickness of CoFeB by W insertion can still maintain PMA. • The sample with W insertion can still maintain PMA until the annealing temperature as high as 350 °C. • The thermal stability factor ∆ of sample with W insertion could be increase to about 132 for a 50 nm size STT-MRAM device.

Annealing effects on the ferromagnetic resonance linewidths of sputter-deposited Fe100−xCox(001) thin films (x < 11)

International Nuclear Information System (INIS)

Kusaoka, A.; Kimura, J.; Takahashi, Y.; Inaba, N.; Kirino, F.; Ohtake, M.; Futamoto, M.

2015-01-01

Effects of post-growth annealing on the magnetic damping of 3d transition alloy thin films were investigated. Fe 100−x Co x (x < 11 at. %) thin films were epitaxially deposited on GaAs(001) substrates by rf magnetron sputtering, and some of them were annealed without exposing to atmosphere. Electrical measurement showed that in-plane resistivity was smaller in the annealed films than in the as-deposited ones, indicating that the annealing mitigates crystalline imperfections and leads to reduced electron scattering rates. Magnetic damping was evaluated by the peak widths of ferromagnetic resonance (FMR) spectra obtained by a conventional Q-band spectrometer. Comparison of as-deposited and annealed specimens showed that the damping was decreased by annealing. Combined with the electrical and FMR measurements, these observations are consistent with the theoretical predictions that crystalline imperfections strongly influence the magnetic damping, both in intrinsic and extrinsic origins

Insulator at the ultrathin limit: MgO on Ag(001).

Science.gov (United States)

Schintke, S; Messerli, S; Pivetta, M; Patthey, F; Libioulle, L; Stengel, M; De Vita, A; Schneider, W D

2001-12-31

The electronic structure and morphology of ultrathin MgO films epitaxially grown on Ag(001) were investigated using low-temperature scanning tunneling spectroscopy and scanning tunneling microscopy. Layer-resolved differential conductance (dI/dU) measurements reveal that, even at a film thickness of three monolayers, a band gap of about 6 eV is formed corresponding to that of the MgO(001) single-crystal surface. This finding is confirmed by layer-resolved calculations of the local density of states based on density functional theory.

The Importance of Surface IrO_x in Stabilizing RuO₂ for Oxygen Evolution

DEFF Research Database (Denmark)

Escribano, Maria Escudero; Pedersen, Anders Filsøe; Paoli, Elisa Antares

2018-01-01

consisting of RuO2 thin films with sub-monolayer (1, 2 and 4 Å) amounts of IrOx deposited on top. Operando extended X-ray absorption fine structure (EXAFS) on the Ir L-3 edge revealed a rutile type IrO2 structure with some Ir sites occupied by Ru, IrOx being at the surface of the RuO2 thin film. We monitor...... corrosion on IrOx/RuO2 thin films by combining electrochemical quartz crystal microbalance (EQCM) with inductively coupled mass spectrometry (ICP-MS). We elucidate the importance of sub-monolayer surface IrOx in minimizing Ru dissolution. Our work shows that we can tune the surface properties of active OER...

Phase-coherent electron transport in (Zn, Al)O{sub x} thin films grown by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Ajimsha, R. S.; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

2014-11-24

A clear signature of disorder induced quantum-interference phenomena leading to phase-coherent electron transport was observed in (Zn, Al)O{sub x} thin films grown by atomic layer deposition. The degree of static-disorder was tuned by varying the Al concentration through periodic incorporation of Al{sub 2}O{sub 3} sub-monolayer in ZnO. All the films showed small negative magnetoresistance due to magnetic field suppressed weak-localization effect. The temperature dependence of phase-coherence length (l{sub φ}∝T{sup −3/4}), as extracted from the magnetoresistance measurements, indicated electron-electron scattering as the dominant dephasing mechanism. The persistence of quantum-interference at relatively higher temperatures up to 200 K is promising for the realization of ZnO based phase-coherent electron transport devices.

Potential energy landscape of an interstitial O2 molecule in a SiO2 film near the SiO2/Si(001) interface

Science.gov (United States)

Ohta, Hiromichi; Watanabe, Takanobu; Ohdomari, Iwao

2008-10-01

Potential energy distribution of interstitial O2 molecule in the vicinity of SiO2/Si(001) interface is investigated by means of classical molecular simulation. A 4-nm-thick SiO2 film model is built by oxidizing a Si(001) substrate, and the potential energy of an O2 molecule is calculated at Cartesian grid points with an interval of 0.05 nm in the SiO2 film region. The result shows that the potential energy of the interstitial site gradually rises with approaching the interface. The potential gradient is localized in the region within about 1 nm from the interface, which coincides with the experimental thickness of the interfacial strained layer. The potential energy is increased by about 0.62 eV at the SiO2/Si interface. The result agrees with a recently proposed kinetic model for dry oxidation of silicon [Phys. Rev. Lett. 96, 196102 (2006)], which argues that the oxidation rate is fully limited by the oxidant diffusion.

Incorporation of La in epitaxial SrTiO{sub 3} thin films grown by atomic layer deposition on SrTiO{sub 3}-buffered Si (001) substrates

Energy Technology Data Exchange (ETDEWEB)

McDaniel, Martin D.; Ngo, Thong Q.; Ekerdt, John G., E-mail: ekerdt@utexas.edu [University of Texas at Austin, Department of Chemical Engineering, Austin, Texas 78712 (United States); Posadas, Agham; Demkov, Alexander A. [University of Texas at Austin, Department of Physics, Austin, Texas 78712 (United States); Karako, Christine M. [University of Dallas, Department of Chemistry, Irving, Texas 75062 (United States); Bruley, John; Frank, Martin M.; Narayanan, Vijay [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

2014-06-14

Strontium titanate, SrTiO{sub 3} (STO), thin films incorporated with lanthanum are grown on Si (001) substrates at a thickness range of 5–25 nm. Atomic layer deposition (ALD) is used to grow the La{sub x}Sr{sub 1−x}TiO{sub 3} (La:STO) films after buffering the Si (001) substrate with four-unit-cells of STO deposited by molecular beam epitaxy. The crystalline structure and orientation of the La:STO films are confirmed via reflection high-energy electron diffraction, X-ray diffraction, and cross-sectional transmission electron microscopy. The low temperature ALD growth (∼225 °C) and post-deposition annealing at 550 °C for 5 min maintains an abrupt interface between Si (001) and the crystalline oxide. Higher annealing temperatures (650 °C) show more complete La activation with film resistivities of ∼2.0 × 10{sup −2} Ω cm for 20-nm-thick La:STO (x ∼ 0.15); however, the STO-Si interface is slightly degraded due to the increased annealing temperature. To demonstrate the selective incorporation of lanthanum by ALD, a layered heterostructure is grown with an undoped STO layer sandwiched between two conductive La:STO layers. Based on this work, an epitaxial oxide stack centered on La:STO and BaTiO{sub 3} integrated with Si is envisioned as a material candidate for a ferroelectric field-effect transistor.

Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates.

Science.gov (United States)

Cao, Qing; Kim, Hoon-sik; Pimparkar, Ninad; Kulkarni, Jaydeep P; Wang, Congjun; Shim, Moonsub; Roy, Kaushik; Alam, Muhammad A; Rogers, John A

2008-07-24

The ability to form integrated circuits on flexible sheets of plastic enables attributes (for example conformal and flexible formats and lightweight and shock resistant construction) in electronic devices that are difficult or impossible to achieve with technologies that use semiconductor wafers or glass plates as substrates. Organic small-molecule and polymer-based materials represent the most widely explored types of semiconductors for such flexible circuitry. Although these materials and those that use films or nanostructures of inorganics have promise for certain applications, existing demonstrations of them in circuits on plastic indicate modest performance characteristics that might restrict the application possibilities. Here we report implementations of a comparatively high-performance carbon-based semiconductor consisting of sub-monolayer, random networks of single-walled carbon nanotubes to yield small- to medium-scale integrated digital circuits, composed of up to nearly 100 transistors on plastic substrates. Transistors in these integrated circuits have excellent properties: mobilities as high as 80 cm(2) V(-1) s(-1), subthreshold slopes as low as 140 m V dec(-1), operating voltages less than 5 V together with deterministic control over the threshold voltages, on/off ratios as high as 10(5), switching speeds in the kilohertz range even for coarse (approximately 100-microm) device geometries, and good mechanical flexibility-all with levels of uniformity and reproducibility that enable high-yield fabrication of integrated circuits. Theoretical calculations, in contexts ranging from heterogeneous percolative transport through the networks to compact models for the transistors to circuit level simulations, provide quantitative and predictive understanding of these systems. Taken together, these results suggest that sub-monolayer films of single-walled carbon nanotubes are attractive materials for flexible integrated circuits, with many potential areas of

Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics

Energy Technology Data Exchange (ETDEWEB)

Kim, H.; Glass, G.; Spila, T.; Taylor, N.; Park, S.Y.; Abelson, J.R.; Greene, J.E. [Department of Materials Science, Coordinated Science Laboratory, and Materials Research Laboratory, University of Illinois, 1101 West Springfield, Urbana, Illinois 61801 (United States)

1997-09-01

B-doped Si(001) films, with concentrations C{sub B} up to 1.7{times}10{sup 22}cm{sup {minus}3}, were grown by gas-source molecular-beam epitaxy from Si{sub 2}H{sub 6} and B{sub 2}H{sub 6} at T{sub s}=500{endash}800{degree}C. D{sub 2} temperature-programed desorption (TPD) spectra were then used to determine B coverages {theta}{sub B} as a function of C{sub B} and T{sub s}. In these measurements, as-deposited films were flash heated to desorb surface hydrogen, cooled, and exposed to atomic deuterium until saturation coverage. Strong B surface segregation was observed with surface-to-bulk B concentration ratios ranging up to 1200. TPD spectra exhibited {beta}{sub 2} and {beta}{sub 1} peaks associated with dideuteride and monodeuteride desorption as well as lower-temperature B-induced peaks {beta}{sub 2}{sup {asterisk}} and {beta}{sub 1}{sup {asterisk}}. Increasing {theta}{sub B} increased the area under {beta}{sub 2}{sup {asterisk}} and {beta}{sub 1}{sup {asterisk}} at the expense of {beta}{sub 2} and {beta}{sub 1} and decreased the total D coverage {theta}{sub D}. The TPD results were used to determine the B segregation enthalpy, {minus}0.53eV, and to explain and model the effects of high B coverages on Si(001) growth kinetics. Film deposition rates R increase by {ge}50{percent} with increasing C{sub B}{tilde {gt}}1{times}10{sup 19}cm{sup {minus}3} at T{sub s}{le}550{degree}C, due primarily to increased H desorption rates from B-backbonded Si adatoms, and decrease by corresponding amounts at T{sub s}{ge}600{degree}C due to decreased adsorption site densities. At T{sub s}{ge}700{degree}C, high B coverages also induce {l_brace}113{r_brace} facetting. {copyright} {ital 1997 American Institute of Physics.}

Sub-monolayer Deposited InGaAs/GaAs Quantum Dot Heterostructures and Lasers

DEFF Research Database (Denmark)

Xu, Zhangcheng

2004-01-01

deposition, the deposition of a short-period InAs/GaAs superlattice on GaAs (100) surface with an InAs effective thickness of less than 1 monolayer (ML), results in the formatioin of nanometer scale (In,Ga)As QDs of a non-SK class.In this thesis, the SML InGaAs/GaAs QDs are formed by 10 cycles of alternate......The fabrication, characterization and exploitation of self-assembled quantum dot (QD) heterostructures have attracted much attention not only in basic research, but also by the promising device applications such as QD lasers. The Stranski-Krastanow (SK) growth and the submonolayer (SML) deposition...... deposition of 0.5 ML InAs and 2.5 MLGaAs. The growth, structure, and optical properties of SML InGaAs/GaAs QD heterostructures are investigated in detail. SML InGaAs/GaAs QD lasers lasing even at room temperature have been successfully realized. The gain properties of SML InGaAs QD lasers are studied...

Structural analysis of sputtered (W-C)1-xMx (M≡Fe,Co) films with 0≤x≤0.20

International Nuclear Information System (INIS)

Cavaleiro, A.; Trindade, B.; Vieira, M.T.

1993-01-01

Structural characterization of (W-C) 1-x M x (M≡Fe,Co) films with 0≤x≤0.20 was carried out using electron probe microanalysis (EPMA), X-ray diffraction (XRD) and transmission electron microscopy-electron diffraction (TEM-ED). The results showed that the structure of these films depends on the percentage of iron and cobalt and becomes amorphous with increasing content of these elements. The microstructure of the crystalline coatings was found to be composed of small grains of β-WC 1-x with a high number of defects. A strong β-WC 1-x [311] texture was observed for iron and cobalt contents around 5.5 at.%. The films richer in iron and cobalt showed typical amorphous XRD and ED patterns, exhibiting two broad peaks and two wide diffuse rings respectively. Moreover, bright-field analysis revealed fairly contrasted images, the structure of these films being difficult to resolve. (orig.)

P-MoS2 / n-CdS thin film heterojunction

International Nuclear Information System (INIS)

El Maliki, H.; Gourmelon, E.; Bernede, J.C.; Pouzet, J.; Mebarki, M.; Khelil, A.; Zoaeter, M.

1999-01-01

Full text.Layered transition metal dichacolgenides such as MoS 2 are semiconductors that can be good candidates for solar energy conversion. Photo-electrochemical cells based on single crystals have achieved and efficiency of 17% (1). However, up to day, no solid rectifying contact has been put in evidence in the case of MoS 2 thin films.. Recently we have shown that such high crystalline quality MoS 2 films can be obtained onto textured tungsten slides. This allowed to try to grow sandwich rectifying structures. The bottom electrode will be W, MoS 2 being p-type, the n type film used was CdS and the upper electrode was indium. W foils textured along the (h00) direction were used as substrate and bottom electrode. The use of a W (textured) substrate induces the texturation of the MoS 2 films along the (001) direction when after evaporation of the constituents the films were annealed at T=1073 K for half an hour under argon atmosphere. Upon the MoS 2 a CdS thin film was deposited by chemical bath deposition (CBD). CdS thin films were prepared classically from a solution of cadmium sulfate, thiourea in hydrazine and ammonia. Ammonia was used adjust the solution pH to a value between 9 and 10. Bath temperature has been held constant at 343 K. Thin deposit films of CdS were yellow colored. They were constituted of an homogenous and adherent layer with a thickness of about 100 nm. It has been shown by x-ray diffraction the they were crystallized in their hexagonal structure. At least an indium film was deposited in order to achieve the structure M/MoS 2 p/CdSn/M. In order to check the equality of the W/MoS 2 contact, W/MoS 2 /W samples were also carried out by sputtering deposition of the tungsten upper electrode (300 nm thick). The thickness of the MoS 2 layers was about 500 nm. The J-V characteristics of a W/MoS 2 /W sample are ohmic. Moreover the resistance deduced from the slope ΔV/ΔI increases when the temperature decreases, which shows that there is not any

An imitative calculation of W/C, Mo/Si articifial multilayered films' structures and properties as X-ray monochromators

International Nuclear Information System (INIS)

Liu Wen; Liu Wenhan; Wu Ziqin

1989-01-01

An imitative calculation on W/C and Mo/Si artificial multilayered films have been made. The influences of total period numbers and deviation of period thickness on X-ray diffraction peak were given. Two difference diviations, random fluctuation and system linear deviation have been imitated, their influences on X-ray energy distinguish power have been compared

Epitaxial c-axis oriented BaTiO3 thin films on SrTiO3-buffered Si(001) by atomic layer deposition

International Nuclear Information System (INIS)

Ngo, Thong Q.; McDaniel, Martin D.; Ekerdt, John G.; Posadas, Agham B.; Demkov, Alexander A.; Hu, Chengqing; Yu, Edward T.; Bruley, John

2014-01-01

Atomic layer deposition (ALD) of epitaxial c-axis oriented BaTiO 3 (BTO) on Si(001) using a thin (1.6 nm) buffer layer of SrTiO 3 (STO) grown by molecular beam epitaxy is reported. The ALD growth of crystalline BTO films at 225  °C used barium bis(triisopropylcyclopentadienyl), titanium tetraisopropoxide, and water as co-reactants. X-ray diffraction (XRD) reveals a high degree of crystallinity and c-axis orientation of as-deposited BTO films. Crystallinity is improved after vacuum annealing at 600  °C. Two-dimensional XRD confirms the tetragonal structure and orientation of 7–20-nm thick films. The effect of the annealing process on the BTO structure is discussed. A clean STO/Si interface is found using in-situ X-ray photoelectron spectroscopy and confirmed by cross-sectional scanning transmission electron microscopy. The capacitance-voltage characteristics of 7–20 nm-thick BTO films are examined and show an effective dielectric constant of ∼660 for the heterostructure

Ab initio calculations of PbTiO{sub 3}/SrTiO{sub 3} (001) heterostructures

Energy Technology Data Exchange (ETDEWEB)

Eglitis, R.I.; Piskunov, S.; Zhukovskii, Yu.F. [Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., 1063 Riga (Latvia)

2016-12-15

We performed ab initio calculations for the PbTiO{sub 3}/SrTiO{sub 3} (001) heterostructures. For both PbO and TiO{sub 2}-terminations of the PbTiO{sub 3} (001) thin film, augmented on the SrTiO{sub 3} (001) substrate, the magnitudes of atomic relaxations Δz increases as a function of the number of augmented monolayers. For both terminations of the augmented PbTiO{sub 3} (001) nanothin film, all upper, third and fifth monolayers are displaced inwards (Δz is negative), whereas all second, fourth and sixth monolayers are displaced outwards (Δz is positive). The B3PW calculated PbTiO{sub 3}/SrTiO{sub 3} (001) heterostructure band gaps, independently from the number of augmented layers, are always smaller than the PbTiO{sub 3} and SrTiO{sub 3} bulk band gaps. For both PbO and TiO{sub 2}-terminated PbTiO{sub 3}/SrTiO{sub 3}(001) heterostructures, their band gaps are reduced due to the increased number of PbTiO{sub 3} (001) monolayers. The band gaps of PbO-terminated augmented PbTiO{sub 3} (001) films are always larger than those for TiO{sub 2}-terminated PbTiO{sub 3} (001) thin films. The only exception is the case of 7-layer PbO-terminated and 8-layer TiO{sub 2}-terminated augmented PbTiO{sub 3} (001) thin films, where their band gaps both are equal to 2.99 eV. For each monolayer of the SrTiO{sub 3} (001) substrate, charge magnitudes always are more than several times larger, than for each monolayer in the augmented PbTiO{sub 3} (001) thin film. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Interplay of uniaxial and cubic anisotropy in epitaxial Fe thin films on MgO (001 substrate

Directory of Open Access Journals (Sweden)

Srijani Mallik

2014-09-01

Full Text Available Epitaxial Fe thin films were grown on annealed MgO(001 substrates at oblique incidence by DC magnetron sputtering. Due to the oblique growth configuration, uniaxial anisotropy was found to be superimposed on the expected four-fold cubic anisotropy. A detailed study of in-plane magnetic hysteresis for Fe on MgO thin films has been performed by Magneto Optic Kerr Effect (MOKE magnetometer. Both single step and double step loops have been observed depending on the angle between the applied field and easy axis i.e. along ⟨100⟩ direction. Domain images during magnetization reversal were captured by Kerr microscope. Domain images clearly evidence two successive and separate 90° domain wall (DW nucleation and motion along cubic easy cum uniaxial easy axis and cubic easy cum uniaxial hard axis, respectively. However, along cubic hard axis two 180° domain wall motion dominate the magnetization reversal process. In spite of having four-fold anisotropy it is essential to explain magnetization reversal mechanism in 0°< ϕ < 90° span as uniaxial anisotropy plays a major role in this system. Also it is shown that substrate rotation can suppress the effect of uniaxial anisotropy superimposed on four-fold anisotropy.

Reaction of Tri-methylaluminum on Si (001) Surface for Initial Aluminum Oxide Thin-Film Growth

International Nuclear Information System (INIS)

Kim, Dae Hee; Kim, Dae Hyun; Jeong, Yong Chan; Seo, Hwa Il; Kim, Yeong Cheol

2010-01-01

We studied the reaction of tri-methylaluminum (TMA) on hydroxyl (OH)-terminated Si (001) surfaces for the initial growth of aluminum oxide thin-films using density functional theory. TMA was adsorbed on the oxygen atom of OH due to the oxygen atom's lone pair electrons. The adsorbed TMA reacted with the hydrogen atom of OH to produce a di-methylaluminum group (DMA) and methane with an energy barrier of 0.50 eV. Low energy barriers in the range of 0 - 0.11 eV were required for DMA migration to the inter-dimer, intra-dimer, and inter-row sites on the surface. A unimethylaluminum group (UMA) was generated at each site with low energy barriers in the range of 0.21 - 0.25 eV. Among the three sites, the inter-dimer site was the most probable for UMA formation

Film w nauczaniu języka polskiego jako obcego

Directory of Open Access Journals (Sweden)

Maria Szumera

2017-08-01

Full Text Available According to its original purpose film providing entertainment since its invention but this function od movie does not eliminate its function utility film in education. Especially the film like no other media does not reflect reality as well and still makes people happy watching it. The article presents practical ways to use film in teaching Polish as a foreign language with concrete proposals films and grammar exercises, vocabulary, communication.

Wet-cleaning of MgO(001): Modification of surface chemistry and effects on thin film growth investigated by x-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectroscopy

OpenAIRE

Le Febvrier, Arnaud; Jensen, Jens; Eklund, Per

2017-01-01

The effect of the wet-cleaning process using solvents and detergent on the surface chemistry of MgO(001) substrate for film deposition was investigated. Six different wet-cleaning processes using solvent and detergent were compared. The effect on film growth was studied by the example system ScN. The surface chemistry of the cleaned surface was studied by x-ray photoelectron spectroscopy and the film/substrate interface after film growth was investigated by time-of-flight secondary ion mass s...

Atomic layer deposition of W - based layers on SiO2

NARCIS (Netherlands)

van Nieuwkasteele-Bystrova, Svetlana Nikolajevna; Holleman, J.; Wolters, Robertus A.M.; Aarnink, Antonius A.I.

2003-01-01

W and W1-xNx , where x= 15- 22 at%, thin films were grown using the ALD (Atomic Layer Deposition) principle. Growth rate of W films is about 4- 5 monolayers/ cycle at 300- 350 ºC. Growth rate of W1-xNx is 0.5 monolayer/cycle at 325- 350 ºC. Standard Deviation (STDV) of thickness is about 2%

Ordering of pentacene in organic thin film transistors induced by irradiation of infrared light

International Nuclear Information System (INIS)

Wang, C. H.; Chen, S. W.; Hwang, J.

2009-01-01

The device performances of pentacene-based organic thin film transistors (OTFTs) were greatly improved by irradiation of infrared light. The field effect mobility and maximum drain current increase from 0.20±0.01 to 0.57±0.02 cm 2 /V s and 1.14x10 -5 to 4.91x10 -5 A, respectively. The (001) peak of the pentacene 'thin film' phase increases in intensity by 4.5 times after infrared irradiation at 50 W for 2 h. Two types of crystal orientations, i.e., 'crystal I' (2θ=5.91 deg.) and 'crystal II' (2θ=5.84 deg.), coexist in the pentacene. The improvement of the characteristics of OTFTs is attributed to crystallization and crystal reorientation induced by infrared light.

RF Magnetron Sputtering Deposited W/Ti Thin Film For Smart Window Applications

Science.gov (United States)

Oksuz, Lutfi; Kiristi, Melek; Bozduman, Ferhat; Uygun Oksuz, Aysegul

2014-10-01

Electrochromic (EC) devices can change reversible and persistent their optical properties in the visible region (400-800 nm) upon charge insertion/extraction according to the applied voltage. A complementary type EC is a device containing two electrochromic layers, one of which is anodically colored such as vanadium oxide (V2 O5) while the other cathodically colored such as tungsten oxide (WO3) which is separated by an ionic conduction layer (electrolyte). The use of a solid electrolyte such as Nafion eliminates the need for containment of the liquid electrolyte, which simplifies the cell design, as well as improves safety and durability. In this work, the EC device was fabricated on a ITO/glass slide. The WO3-TiO2 thin film was deposited by reactive RF magnetron sputtering using a 2-in W/Ti (9:1%wt) target with purity of 99.9% in a mixture gas of argon and oxygen. As a counter electrode layer, V2O5 film was deposited on an ITO/glass substrate using V2O3 target with the same conditions of reactive RF magnetron sputtering. Modified Nafion was used as an electrolyte to complete EC device. The transmittance spectra of the complementary EC device was measured by optical spectrophotometry when a voltage of +/-3 V was applied to the EC device by computer controlled system. The surface morphology of the films was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM) (Fig. 2). The cyclic voltammetry (CV) for EC device was performed by sweeping the potential between +/-3 V at a scan rate of 50 mV/s.

w zhang

Indian Academy of Sciences (India)

Home; Journals; Bulletin of Materials Science. W ZHANG. Articles written in Bulletin of Materials Science. Volume 41 Issue 2 April 2018 pp 51. Effect of oxygen vacancies on Li-storage of anatase TiO 2 (001) facets: a first principles study · H CHEN Y H DING X Q TANG W ZHANG J R YIN P ZHANG Y JIANG · More Details ...

Ge(001):B gas-source molecular beam epitaxy: B surface segregation, hydrogen desorption, and film growth kinetics

Energy Technology Data Exchange (ETDEWEB)

Kim, H.; Greene, J.E. [Materials Science Department, the Coordinated Science Laboratory and the Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)

1999-03-01

Ultrahigh B-doped Ge(001) layers, with concentrations C{sub B} up to 8{times}10{sup 21} cm{sup {minus}3}, were grown by gas-source molecular beam epitaxy from Ge{sub 2}H{sub 6} and B{sub 2}H{sub 6} at temperatures T{sub s}=325{degree}C (in the surface-reaction-limited regime) and 600{degree}C (in the flux-limited regime). The samples were quenched, D site exchanged for H, and D{sub 2} temperature-programed desorption (TPD) used to determine B coverages {theta}{sub B} as a function of C{sub B} and T{sub s} by comparison with B-adsorbed Ge(001) reference samples with known {theta}{sub B} values. During Ge(001):B film growth, strong surface B segregation to the second layer was observed with surface-to-bulk B concentration ratios ranging up to 6000. The TPD spectra exhibited {alpha}{sub 2} and {alpha}{sub 1} peaks associated with dideuteride and monodeuteride desorption as well as lower-temperature B-induced {alpha}{sub 2}{sup {asterisk}} and {alpha}{sub 1}{sup {asterisk}} peaks associated with deuterium desorption from Ge{sup {asterisk}} surface atoms with B backbonds. Increasing {theta}{sub B} expanded the area under {alpha}{sub 2}{sup {asterisk}} and {alpha}{sub 1}{sup {asterisk}} at the expense of {alpha}{sub 2} and {alpha}{sub 1} and decreased the total D coverage {theta}{sub D}. The TPD results were used to determine the B segregation enthalpy, {minus}0.64 eV, and to explain and model the effects of high B coverages on Ge(001) growth kinetics. At T{sub s}=325{degree}C, where B segregation is kinetically hindered, film deposition rates R{sub Ge} are not a strong function of C{sub B}, exhibiting only a small decrease at C{sub B}{approx_gt}5{times}10{sup 18} cm{sup {minus}3}. However, at T{sub s}=600{degree}C, R{sub Ge} decreases by up to 40{percent} with increasing C{sub B}{approx_gt}1{times}10{sup 18} cm{sup {minus}3}. This is due primarily to the combination of B-induced Ge dimer vacancies and the deactivation of surface dangling bonds caused by charge transfer

Deposition of highly oriented (K,Na)NbO₃ films on flexible metal substrates

DEFF Research Database (Denmark)

Grivel, Jean-Claude; Thydén, Karl; Bowen, Jacob R.

2018-01-01

In view of developing flexible, highly textured Pb-free piezoelectric thin films, (K,Na)NbO3 was deposited by chemical solution deposition on cube-textured Ni-W alloy substrates. After heat treatment, a strong (001)pc out-of-plane preferential orientation is created in the (K,Na)NbO3 layer, which...

Growth and characterization of germanium epitaxial film on silicon (001 with germane precursor in metal organic chemical vapour deposition (MOCVD chamber

Directory of Open Access Journals (Sweden)

Kwang Hong Lee

2013-09-01

Full Text Available The quality of germanium (Ge epitaxial film grown directly on a silicon (Si (001 substrate with 6° off-cut using conventional germane precursor in a metal organic chemical vapour deposition (MOCVD system is studied. The growth sequence consists of several steps at low temperature (LT at 400 °C, intermediate temperature ramp (LT-HT of ∼10 °C/min and high temperature (HT at 600 °C. This is followed by post-growth annealing in hydrogen at temperature ranging from 650 to 825 °C. The Ge epitaxial film of thickness ∼ 1 μm experiences thermally induced tensile strain of 0.11 % with a treading dislocation density (TDD of ∼107/cm2 and the root-mean-square (RMS roughness of ∼ 0.75 nm. The benefit of growing Ge epitaxial film using MOCVD is that the subsequent III-V materials can be grown in-situ without the need of breaking the vacuum hence it is manufacturing worthy.

Polarization recovery in lead zirconate titanate thin films deposited on nanosheets-buffered Si (001)

OpenAIRE

Anuj Chopra; Muharrem Bayraktar; Maarten Nijland; Johan E. ten Elshof; Fred Bijkerk; Guus Rijnders

2016-01-01

Fatigue behavior of Pb(Zr,Ti)O3 (PZT) films is one of the deterrent factors that limits the use of these films in technological applications. Thus, understanding and minimization of the fatigue behavior is highly beneficial for fabricating reliable devices using PZT films. We have investigated the fatigue behavior of preferentially oriented PZT films deposited on nanosheets-buffered Si substrates using LaNiO3 bottom and top electrodes. The films show fatigue of up to 10% at 100 kHz, whereas n...

Preparation and microstructural characterization of TiC and Ti0.6W0.4/TiC0.6 composite thin films obtained by activated reactive evaporation

International Nuclear Information System (INIS)

Montes de Oca, J. A.; LePetitcorps, Y.; Manaud, J.-P.; Vargas Garcia, J. R.

2008-01-01

Titanium carbide-based coatings were deposited on W substrates at a high coating growth rate by activated reactive evaporation at 500 and 600 deg. C in a L560 Leybold system using propene as reactive atmosphere. The crystal structure, lattice parameter, preferred orientation, and grain size of the coatings were determined by x-ray diffraction technique using Cu Kα. The analysis of the coating morphology was performed by scanning electron microscopy (SEM), and the composition of the films was analyzed by Auger electron spectroscopy and electron-probe microanalysis. Experimental results suggested that temperature was one of the most important parameters in the fabrication of stoichiometric TiC coatings. Thus, TiC coatings were obtained at 600 deg. C, whereas TiC 0.6 nonstoichiometric coatings codeposited with a free Ti phase were obtained at 500 deg. C, giving rise to the formation of a composite thin film. After annealing at 1000 deg. C, the stoichiometric films remained stable, but a crack pattern was formed over the entire coating surface. In addition, Ti 0.6 W 0.4 /TiC 0.6 composite thin coatings were obtained for the films synthesized at 500 deg. C. The formation of a Ti 0.6 W 0.4 ductile phase in the presence of a TiC 0.6 phase was responsible to avoid the coating cracking

Interface magnetism of iron grown on sulfur and hydrogen passivated GaAs(001)

International Nuclear Information System (INIS)

Kardasz, B.; Watkins, S. P.; Montoya, E. A.; Burrowes, C.; Girt, E.; Heinrich, B.

2012-01-01

Sulfur (S) and hydrogen (H) atom passivated GaAs(001) templates were used for deposition of ultrathin crystalline Fe films using molecular beam epitaxy, where the Fe thickness ranged from 10 to 45 atomic layers. Reflection high-energy electron diffraction patterns showed that the S- and H-passivated surfaces had no and very weak (1 x 2) superlattice reconstructions, respectively. This indicates that these GaAs(001) templates have a square-like symmetry. Magnetic anisotropies were investigated using the in-plane angular dependence of ferromagnetic resonance at 36 GHz. The in-plane cubic and uniaxial anisotropies and perpendicular uniaxial field were described by bulk and interface contributions, indicating that the Fe films have a high lattice coherence. The magnetic properties of the Fe films were compared to those grown on more commonly used GaAs(001) templates having a (4 x 6) reconstruction with an As-rich in-plane uniaxial symmetry. The Fe films grown on S-passivated templates exhibited unique magnetic properties caused by a decreased lattice spacing compared to the bulk Fe.

Interface magnetism of iron grown on sulfur and hydrogen passivated GaAs(001)

Energy Technology Data Exchange (ETDEWEB)

Kardasz, B.; Watkins, S. P.; Montoya, E. A.; Burrowes, C.; Girt, E.; Heinrich, B.

2012-04-01

Sulfur (S) and hydrogen (H) atom passivated GaAs(001) templates were used for deposition of ultrathin crystalline Fe films using molecular beam epitaxy, where the Fe thickness ranged from 10 to 45 atomic layers. Reflection high-energy electron diffraction patterns showed that the S- and H-passivated surfaces had no and very weak (1 x 2) superlattice reconstructions, respectively. This indicates that these GaAs(001) templates have a square-like symmetry. Magnetic anisotropies were investigated using the in-plane angular dependence of ferromagnetic resonance at 36 GHz. The in-plane cubic and uniaxial anisotropies and perpendicular uniaxial field were described by bulk and interface contributions, indicating that the Fe films have a high lattice coherence. The magnetic properties of the Fe films were compared to those grown on more commonly used GaAs(001) templates having a (4 x 6) reconstruction with an As-rich in-plane uniaxial symmetry. The Fe films grown on S-passivated templates exhibited unique magnetic properties caused by a decreased lattice spacing compared to the bulk Fe.

Effects of ferroelectric-poling-induced strain on the electronic transport and magnetic properties of (001)- and (111)-oriented La{sub 0.5}Ba{sub 0.5}MnO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Li, X.Y. [Department of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Zheng, M.; Zhu, Q.X.; Yang, M.M.; Li, X.M.; Shi, X. [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Yuan, G.L., E-mail: yuanguoliang@mail.njust.edu.cn [Department of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Wang, Y.; Chan, H.L.W. [Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong (China); Li, X.G. [Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei 230026 (China); Luo, H.S. [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Zheng, R.K., E-mail: zrk@ustc.edu [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)

2014-04-01

We epitaxially grew La{sub 0.5}Ba{sub 0.5}MnO{sub 3} (LBMO) films on (001)- and (111)-oriented ferroelectric single-crystal substrates and reduced the in-plane tensile strain of LBMO films by poling the ferroelectric substrates along the 〈001〉 or 〈111〉 direction. Upon poling, a large decrease in the resistance and a considerable increase in the magnetization, Curie temperature, and magnetoresistance were observed for the LBMO film, which are driven by interface strain coupling. Such strain effects can be significantly enhanced by the application of a magnetic field. An overall analysis of the findings reveals that the mutual interaction between the strain and the magnetic field is mediated by the electronic phase separation which is sensitive to both strain and magnetic field. Our findings highlight that the electronic phase separation is crucial in understanding the electric-field-manipulated strain effects in manganite film/ferroelectric crystal heterostructures. - Highlights: • La{sub 0.5}Ba{sub 0.5}MnO{sub 3} films were epitaxially grown on ternary ferroelectric single crystals. • Ferroelectric poling modifies the strain and physical properties of films. • Magnetic field enhances the strain effects of films. • Phase separation is crucial to understand the magnetic-field-tuned strain effect.

Faceting of (001) CeO2 Films: The Road to High Quality TFA-YBa2Cu3O7 Multilayers

International Nuclear Information System (INIS)

Coll, M; Gazquez, J; Sandiumenge, F; Pomar, A; Puig, T; Obradors, X; Espinos, J P; Gonzalez-Elipe, A R

2006-01-01

CeO 2 films are technologically important as a buffer layer for the integration of superconducting YBa 2 Cu 3 O 7 films on biaxially textured Ni substrates. The growth of YBa 2 Cu 3 O 7 layers on the CeO 2 cap layers by the trifluoroacetate (TFA) route remains a critical issue. To improve the accommodation of YBa 2 Cu 3 O 7 on CeO 2 , surface conditioning or CeO 2 is required. In this work we have applied ex-situ post-processes at different atmospheres to the CeO 2 layers deposited on YSZ single crystals using rf sputtering. XPS analysis showed that post-annealing CeO 2 layer in Ar/H 2 /H 2 O catalyses in an unexpected way the growth of (001)- terraces. We also report on the growth conditions of YBa 2 Cu 3 O 7 -TFA on CeO 2 buffered YSZ single crystal grown by chemical solution deposition and we compare them with those leading to optimized YBa 2 Cu 3 O 7 -TFA films on LaAlO 3 single crystals. Critical currents up to 1.6 MA/cm 2 at 77 K have been demonstrated in 300 nm thick YBa 2 Cu 3 O 7 layers on CeO 2 /YSZ system. The optimized processing conditions have then been applied to grow YBa 2 Cu 3 O 7 -TFA films on Ni substrates having vacuum deposited cap layers of CeO 2

Magnetron-sputter epitaxy of β-FeSi2(220)/Si(111) and β-FeSi2(431)/Si(001) thin films at elevated temperatures

International Nuclear Information System (INIS)

Liu Hongfei; Tan Chengcheh; Chi Dongzhi

2012-01-01

β-FeSi 2 thin films have been grown on Si(111) and Si(001) substrates by magnetron-sputter epitaxy at 700 °C. On Si(111), the growth is consistent with the commonly observed orientation of [001]β-FeSi 2 (220)//[1-10]Si(111) having three variants, in-plane rotated 120° with respect to one another. However, on Si(001), under the same growth conditions, the growth is dominated by [-111]β-FeSi 2 (431)//[110]Si(001) with four variants, which is hitherto unknown for growing β-FeSi 2 . Photoelectron spectra reveal negligible differences in the valance-band and Fe2p core-level between β-FeSi 2 grown on Si(111) and Si(001) but an apparent increased Si-oxidization on the surface of β-FeSi 2 /Si(001). This phenomenon is discussed and attributed to the Si-surface termination effect, which also suggests that the Si/Fe ratio on the surface of β-FeSi 2 (431)/Si(001) is larger than that on the surface of β-FeSi 2 (220)/Si(111).

Effects of ion irradiation on the mechanical properties of SiNa wO xC yH z sol-gel derived thin films

Science.gov (United States)

Lucca, D. A.; Qi, Y.; Harriman, T. A.; Prenzel, T.; Wang, Y. Q.; Nastasi, M.; Dong, J.; Mehner, A.

2010-10-01

A study of the effects of ion irradiation of hybrid organic/inorganic modified silicate thin films on their mechanical properties is presented. NaOH catalyzed SiNa wO xC yH z thin films were synthesized by sol-gel processing from tetraethylorthosilicate (TEOS) and methyltriethoxysilane (MTES) precursors and spin-coated onto Si substrates. After drying at 300 °C, the films were irradiated with 125 keV H + or 250 keV N 2+ at fluences ranging from 1 × 10 14 to 2.5 × 10 16 ions/cm 2. Nanoindentation was used to characterize the films. Changes in hardness and reduced elastic modulus were examined as a function of ion fluence and irradiating species. The resulting increases in hardness and reduced elastic modulus are compared to similarly processed acid catalyzed silicate thin films.

Improved lifetime of chitosan film in converting water vapor to electrical power by adding carboxymethyl cellulose

Science.gov (United States)

Nasution, T. I.; Balyan, M.; Nainggolan, I.

2018-02-01

A Water vapor cell based on chitosan film has been successfully fabricated in film form to convert water vapor to electrical power. In order to improve the lifetime of water vapor cell, Carboxymethyl Cellulose (CMC) was added into 1% chitosan solution within concentration variations of 0.01, 0.05, 0.1 and 0.5%. The result showed that the lifetime of water vapor cell increased higher by adding the higher concentration of Carboxymethyl cellulose. The highest lifetime was evidenced by adding 0.5%CMC which maintained for 48 weeks. However, the average electrical power became lower to 4.621 µW. This electrical power lower than the addition of 0.1%CMC which maintained for 5.167 µW. While, the lifetime of chitosan-0.1%CMC film of 44 weeks is shorter compared to chitosan-0.5%CMC film. Based on FTIR characterization, it was founded that the chitosan structure did not change until the addition of 0.1%CMC. This caused the electrical power of water vapor cell degenerated. Therefore, chitosan-0.5%CMC film has excellent lifetime in converting water vapor to electrical power.

Tilted magnetization of a La0.7Sr0.3MnO3/LaAlO3 (001) thin film

International Nuclear Information System (INIS)

Liebmann, M.; Kaiser, U.; Schwarz, A.; Wiesendanger, R.; Pi, U.H.; Noh, T.W.; Khim, Z.G.; Kim, D.-W.

2004-01-01

A La 0.7 Sr 0.3 MnO 3 thin film epitaxially grown on a LaAlO 3 (001) substrate by pulsed laser deposition has been investigated by means of low-temperature magnetic force microscopy under high stability conditions. The ferromagnetic film exhibits a stress-induced perpendicular easy axis of magnetization. The domain structure was imaged at zero field after (i) thermal demagnetization, (ii) saturation in an in-plane field and (iii) saturation in an out-of-plane magnetic field, respectively. Stripe domains were observed in all cases, however, contrast and domain width are increased after out-of-plane saturation while alignment of stripe domains in field direction occurs after in-plane saturation. A quantitative analysis of the image contrast suggests a variable in-plane component of the magnetization, dependent on the magnetic history of the sample. Calculations of domain width and contrast from the relevant energy contributions are compared with experimental results

Electronic structures of ultra-thin silicon carbides deposited on graphite

International Nuclear Information System (INIS)

Baba, Y.; Sekiguchi, T.; Shimoyama, I.; Nath, Krishna G.

2004-01-01

Electronic structures of ultra-thin silicon carbide films have been investigated by X-ray photoelectron spectroscopy (XPS) and Si K-edge X-ray absorption near edge structure (XANES) using linearly polarized synchrotron soft X-rays. Silicon carbide films were deposited on the surface of highly oriented pyrolytic graphite (HOPG) by ion beam deposition method. Tetramethylsilane (Si(CH 3 ) 4 ) was used as a discharge gas. The XPS and XANES features for the thick layers were similar to those for the bulk SiC. For sub-monolayered films, the Si 1s binding energy in XPS was higher by 2.5 eV than that for bulk SiC. This suggests the existence of low-dimensional SiC x where the silicon atoms are more positively charged than those in bulk SiC. After annealing the sub-monolayered film at 850 deg. C, a new peak appeared around 1840 eV in the XANES spectrum. The energy of this new peak was lower than those for any other silicon compounds. The low-energy feature of the XANES peak suggests the existence of π*-like orbitals around the silicon atom. On the basis of the polarization dependencies of the XANES spectra, it was revealed that the direction of the π*-like orbitals are nearly perpendicular to the surface. We conclude that sub-monolayered SiC x film exhibits flat-lying structure of which configuration is similar to a single sheet of graphite

D. W. Griffith and the Warrior Ethos.

Science.gov (United States)

Quart, Leonard; Auster, Al

1989-01-01

Discusses D. W. Griffith's perceptions of war, his idealized vision of the South before and after the Civil War, and his racism as evidenced in the film, "The Birth of a Nation." Considers responses to and effects of the film. (DMM)

Epitaxial c-axis oriented BaTiO{sub 3} thin films on SrTiO{sub 3}-buffered Si(001) by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Ngo, Thong Q.; McDaniel, Martin D.; Ekerdt, John G., E-mail: ekerdt@che.utexas.edu [Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Posadas, Agham B.; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States); Hu, Chengqing; Yu, Edward T. [Department of Electrical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Bruley, John [IBM Research Division, Yorktown Heights, New York 10593 (United States)

2014-02-24

Atomic layer deposition (ALD) of epitaxial c-axis oriented BaTiO{sub 3} (BTO) on Si(001) using a thin (1.6 nm) buffer layer of SrTiO{sub 3} (STO) grown by molecular beam epitaxy is reported. The ALD growth of crystalline BTO films at 225  °C used barium bis(triisopropylcyclopentadienyl), titanium tetraisopropoxide, and water as co-reactants. X-ray diffraction (XRD) reveals a high degree of crystallinity and c-axis orientation of as-deposited BTO films. Crystallinity is improved after vacuum annealing at 600  °C. Two-dimensional XRD confirms the tetragonal structure and orientation of 7–20-nm thick films. The effect of the annealing process on the BTO structure is discussed. A clean STO/Si interface is found using in-situ X-ray photoelectron spectroscopy and confirmed by cross-sectional scanning transmission electron microscopy. The capacitance-voltage characteristics of 7–20 nm-thick BTO films are examined and show an effective dielectric constant of ∼660 for the heterostructure.

n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy

Science.gov (United States)

Han, Sang-Heon; Mauze, Akhil; Ahmadi, Elaheh; Mates, Tom; Oshima, Yuichi; Speck, James S.

2018-04-01

Ge and Sn as n-type dopants in (001) β-Ga2O3 films were investigated using plasma-assisted molecular beam epitaxy. The Ge concentration showed a strong dependence on the growth temperature, whereas the Sn concentration remains independent of the growth temperature. The maximum growth temperature at which a wide range of Ge concentrations (from 1017 to 1020 cm-3) could be achieved was 675 °C while the same range of Sn concentration could be achieved at growth temperature of 750 °C. Atomic force microscopy results revealed that higher growth temperature shows better surface morphology. Therefore, our study reveals a tradeoff between higher Ge doping concentration and high quality surface morphology on (001) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy. The Ge doped films had an electron mobility of 26.3 cm2 V-1 s-1 at the electron concentration of 6.7 × 1017 cm-3 whereas the Sn doped films had an electron mobility of 25.3 cm2 V-1 s-1 at the electron concentration of 1.1 × 1018 cm-3.

Scaling behavior of the surface roughness of platinum films grown by oblique angle deposition

Science.gov (United States)

Dolatshahi-Pirouz, A.; Hovgaard, M. B.; Rechendorff, K.; Chevallier, J.; Foss, M.; Besenbacher, F.

2008-03-01

Thin platinum films with well-controlled rough surface morphologies are grown by e-gun evaporation at an oblique angle of incidence between the deposition flux and the substrate normal. Atomic force microscopy is used to determine the root-mean-square value w of the surface roughness on the respective surfaces. From the scaling behavior of w , we find that while the roughness exponent α remains nearly unchanged at about 0.90, the growth exponent β changes from 0.49±0.04 to 0.26±0.01 as the deposition angle approaches grazing incidence. The values of the growth exponent β indicate that the film growth is influenced by both surface diffusion and shadowing effects, while the observed change from 0.49 to 0.26 can be attributed to differences in the relative importance of diffusion and shadowing with the deposition angle.

Effect of iron on vanadium (001) strained surface magnetism

Energy Technology Data Exchange (ETDEWEB)

Elzain, M; Al-Barwani, M; Gismelseed, A; Al-Rawas, A; Yousif, A; Widatallah, H; Bouziane, K; Al-Omari, I, E-mail: elzain@squ.edu.o [Department of Physics, College Of Science, Box 36, Sultan Qaboos University, Al Khod 123 (Oman)

2010-03-01

The magnetism of the vanadium (001) surface has been a controversial subject on both theoretical and experiment fronts. Both strongly ferromagnetic and paramagnetic phases were reported. We have used the first principle full-potential linearized-augmented plane waves (FP-LAPW) as implemented in WIEN2k package to study the magnetic properties of strained surfaces of vanadium films as a function of film thickness. We found that for films thicker than about 11 monolayers, the magnetism of the strained surfaces converge to a constant value of about 0.15{mu}{sub B}. Introduction of Fe monolayers and impurities at the centre of the films affects the magnetic structure of thin films but has no influence on the surface magnetism of thicker films. For Fe monolayers positioned at the centre of thick films, the Fe atoms maintain magnetic moment of order 0.86{mu}{sub B}, a quadruple splitting of order -0.3 mm/s and a small negative isomer shift, while an Fe impurity has vanishing hyperfine fields and magnetic moment. In addition we have varied the location of the Fe monolayer and impurity within the V films and found that their position affects the surface magnetism.

Pulsed Laser-Induced Effects in the Material Properties of Tungsten Thin Films

Energy Technology Data Exchange (ETDEWEB)

Evans, R [Centro de Investigacion CientIfica y de Educacion Superior de Ensenada, Km. 107 Carretera Tijuana-Ensenada, BC, 22860 (Mexico); Camacho-Lopez, S [Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Km. 107 Carretera Tijuana-Ensenada, BC, 22860 (Mexico); Camacho-Lopez, M A [Facultad de Quimica, Universidad Autonoma del Estado de Mexico, Paseo Colon y Tollocan, Toluca Edo. de Mexico, 50110 (Mexico); Sanchez-Perez, C [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, UNAM, Apdo. Postal 70-186, Mexico DF 04510 (Mexico); Esparza-GarcIa, A [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, UNAM, Apdo. Postal 70-186, Mexico DF 04510 (Mexico)

2007-04-15

In this work we present evidence of photo-induced effects on crystalline Tungsten (W) films. A frequency doubled Nd:YAG (5ns) laser was used in our experiments. The W thin films were deposited on silicon substrates by the DC-sputtering technique using W (Lesker, 99.95% purity) targets in an argon atmosphere. The crystalline phase of the deposited W films was determined by X-ray diffraction. Our experimental results show clear evidence that several events take place as a consequence of exposure of the W films to the laser nanosecond pulses. One of those events has a chemical effect that results in a significant degree of oxidation of the film; a second event affects the structural nature of the initial W material, resulting into a material phase change; and a third event changes the initially homogeneous morphology of the film into an unexpected porous material film. As it has been confirmed by the experiments, all of these effects are laser fluence dependent. A full post exposure analysis of the W thin films included Energy Dispersive Spectrometry to determine the degree of oxidation of the W film; a micro-Raman system was used to explore and to study the transition of the crystalline W to the amorphous-crystalline WO{sub 3} phase; further analysis with Scanning Electron Microscopy showed a definite laser-induced porosity which changes the initial homogeneous film into a highly porous film with small features in the range from 100 to 300 nm.

Pulsed Laser-Induced Effects in the Material Properties of Tungsten Thin Films

International Nuclear Information System (INIS)

Evans, R; Camacho-Lopez, S; Camacho-Lopez, M A; Sanchez-Perez, C; Esparza-GarcIa, A

2007-01-01

In this work we present evidence of photo-induced effects on crystalline Tungsten (W) films. A frequency doubled Nd:YAG (5ns) laser was used in our experiments. The W thin films were deposited on silicon substrates by the DC-sputtering technique using W (Lesker, 99.95% purity) targets in an argon atmosphere. The crystalline phase of the deposited W films was determined by X-ray diffraction. Our experimental results show clear evidence that several events take place as a consequence of exposure of the W films to the laser nanosecond pulses. One of those events has a chemical effect that results in a significant degree of oxidation of the film; a second event affects the structural nature of the initial W material, resulting into a material phase change; and a third event changes the initially homogeneous morphology of the film into an unexpected porous material film. As it has been confirmed by the experiments, all of these effects are laser fluence dependent. A full post exposure analysis of the W thin films included Energy Dispersive Spectrometry to determine the degree of oxidation of the W film; a micro-Raman system was used to explore and to study the transition of the crystalline W to the amorphous-crystalline WO 3 phase; further analysis with Scanning Electron Microscopy showed a definite laser-induced porosity which changes the initial homogeneous film into a highly porous film with small features in the range from 100 to 300 nm

Combinatorial study of WInZnO films deposited by rf magnetron co-sputtering

International Nuclear Information System (INIS)

Oh, Byeong-Yun; Park, Jae-Cheol; Lee, Young-Jun; Cha, Sang-Jun; Kim, Joo-Hyung; Kim, Kwang-Young; Kim, Tae-Won; Heo, Gi-Seok

2011-01-01

The compositional dependence of co-sputtered tungsten indium zinc oxide (WInZnO) film properties was first investigated by means of a combinatorial technique. Indium zinc oxide (IZO) and WO 3 targets were used with different target power. W composition ratio [W/(In+Zn+W)] was varied between 3 and 30 at% and film thickness was reduced as the sample position moved toward WO 3 target. Furthermore, the optical bandgap energy increased gradually, which might be affected by the reduction in film thickness. All the WInZnO films showed an amorphous phase regardless of the W/(In+Zn+W) ratio. As the W/(In+Zn+W) ratio in WInZnO films increased, the carrier concentration was restricted, causing the increase in electrical resistivity. W cations worked as oxygen binders in determining the electronic properties, resulting in suppressing the formation of oxygen vacancies. Consequentially, W metal cations were effectively incorporated into the WInZnO films as a suppressor against the oxygen vacancies and the carrier generation by employing the combinatorial technique. - Graphical abstract: The film thickness and the sheet resistance (R s ) with respect to the sample position of WInZnO films, which is compositionally graded by rf power for each target, are exhibited. Highlights: → The compositional dependence of co-sputtered WInZnO film properties is first investigated. → W cations work as oxygen binders in determining the electronic properties. → All the WInZnO films show an amorphous phase regardless of the W/(In+Zn+W) ratio. → W metal cations are effectively incorporated into the WInZnO films by the combinatorial technique.

Effect of fabrication conditions on phase formation and properties of epitaxial (PbMg{sub 1/3}Nb{sub 2/3}O{sub 3}){sub 0.67}-(PbTiO{sub 3}){sub 0.33} thin films on (001) SrTiO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Boota, Muhammad [MESA+ Institute for Nanotechnology, Faculty of Science and Technology, University of Twente, P.O. Box 217, 7500AE Enschede (Netherlands); Engineering Department, University of Rome “ROMA TRE”, Via della Vasca Navale 79, 00146 Rome (Italy); Houwman, Evert P., E-mail: e.p.houwman@utwente.nl; Nguyen, Minh D.; Rijnders, Guus [MESA+ Institute for Nanotechnology, Faculty of Science and Technology, University of Twente, P.O. Box 217, 7500AE Enschede (Netherlands); Lanzara, Giulia [Engineering Department, University of Rome “ROMA TRE”, Via della Vasca Navale 79, 00146 Rome (Italy)

2016-05-15

The pulsed laser deposition process of 300 nm thick films of Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}){sub 0.67}-(PbTiO{sub 3}){sub 0.33} on (001)-oriented SrTiO{sub 3} was studied by varying deposition pressure, substrate deposition temperature, laser fluence on the target and target-substrate distance. Perovskite phase pure, (001)-oriented, epitaxial smooth films were obtained in a narrow range of deposition parameters. The ferroelectric and dielectric properties of films fabricated within this parameter range still vary significantly. This shows the sensitivity of the system for growth conditions. The best film has a polarization value close to that expected for a (001) poled, stress free single crystal film. All films show deposition conditions dependent variations in the self-bias field. The self-bias is very stable during long cycling for films made at optimum deposition conditions. The piezoelectric coefficients of the films are strongly reduced with respect to bulk single crystal values due to the film clamping. The properties variations are ascribed to changes in the grain boundary properties in which film defects are expected to accumulate. Notably slight off-stoichiometry may cause localized screening charges, affecting specifically the polarization and dielectric constant.

Structure and composition of Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} films deposited on (001) MgO substrates and the influence of sputtering pressure

Energy Technology Data Exchange (ETDEWEB)

Twigg, M.E.; Alldredge, L.M.B.; Chang, W.; Podpirka, A.; Kirchoefer, S.W.; Pond, J.M.

2013-12-02

The structure and composition of Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films, sputter deposited on (001) MgO substrates, have been characterized by transmission electron microscopy. Deviations in film stoichiometry are seen to strongly correlate with the structural and dielectric properties of these films, with the films deposited at the lower sputtering pressures either Ti-deficient or capped with a titanium oxide layer similar to the rutile TiO{sub 2} phase. Preferential sputtering of cations is found to be an important factor governing film stoichiometry. The Ti-deficient films deposited at a lower sputtering pressure contain Ruddlesden–Popper faults that increase the average lattice constant of the film and result in compressive strain and low dielectric tunability. - Highlights: • Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) film deposited at very low pressure is capped with TiO{sub 2} layer. • TiO{sub 2} capped film is under only slight compressive strain, but has poor tunability. • BST films deposited at low pressure contain Ruddlesden–Popper Faults (RPFs). • RPF-containing films have high compressive strains and poor dielectric tunability. • High-pressure films have no RPFs, little compression strain, and high tunability.

Self-assembled magnetic nanostructures: Epitaxial Ni nanodots on TiN/Si (001) surface

International Nuclear Information System (INIS)

Zhou, H.; Narayan, J.

2006-01-01

Systems containing single domain magnetic particles are of great interest in view of their possible applications in ultrahigh-density data storage and magnetoelectronic devices. The focus of this work is plan-view STEM Z-contrast imaging study of the self-assembly growth of magnetic nickel nanostructures by domain matching epitaxy under Volmer-Weber (V-W) mode. The growth was carried out using pulsed laser deposition (PLD) technique with epitaxial titanium nitride film as the template, which was in turn grown on silicon (001) substrate via domain matching epitaxy. Our results show that the base of nickel islands is rectangular with the two principal edges parallel to two orthogonal directions, which is [110] and [1-bar 1 0] for [001] oriented growth. The size distribution of the islands is relatively narrow, comparable to that obtained from self-assembled islands grown under Stranski-Krastanow (S-K) mode. A certain degree of self-organization was also found in the lateral distribution of islands: island chains were observed along the directions close to , which are also the edge directions. The interaction between neighboring islands through the island edge-induced strain field is believed to be responsible for the size uniformity and the lateral ordering

Cassava starch films containing acetylated starch nanoparticles as reinforcement: Physical and mechanical characterization.

Science.gov (United States)

Teodoro, Ana Paula; Mali, Suzana; Romero, Natália; de Carvalho, Gizilene Maria

2015-08-01

This paper reports the use of acetylated starch nanoparticles (NPAac) as reinforcement in thermoplastic starch films. NPAac with an average size of approximately 500 nm were obtained by nanoprecipitation. Fourier transform infrared (FTIR) and thermogravimetric analysis (TGA) indicated that NPAac are more thermally stable and essentially amorphous when compared with acetylated starch. Thermoplastic starch films with different proportions of NPAac (0.5, 1.0, 1.5, 10.0%, w/w) were obtained and characterized by scanning electron microscopy (SEM), water vapor permeability (WVP), adsorption isotherms, TGA and mechanical tests. The inclusion of reinforcement caused changes in film properties: WVP was lowered by 41% for film with 1.5% (w/w) of NPAac and moisture adsorption by 33% for film with 10% (w/w) of NPAac; and the Young's modulus and thermal stability were increased by 162% and 15%, respectively, for film with 0.5% (w/w) of NPAac compared to the starch film without the addition of NPAac. Copyright © 2015 Elsevier Ltd. All rights reserved.

Physical Evaluation of PVA/Chitosan Film Blends with Glycerine and Calcium Chloride

Science.gov (United States)

Nugraheni, A. D.; Purnawati, D.; Kusumaatmaja, A.

2018-04-01

PVA/chitosan film has been fabricated by using drop casting method. PVA/chitosan film is produced by dissolving 2% (w/v) PVA solution and 2% (w/v) chitosan solution. PVA/chitosan film is produced with weight ratio variation (w/w) 100/0, 75/25, 50/50 and 0/100. The film is fabricated using drop casting method in Petry dish with diameter 11 cm at room temperature and RH 50%–60% during seven days. The mechanical properties were characterized by using Universal Technical Machine (UTM) and UV-Vis to understand the physical properties of weight ratio (w/w) of PVA/Chitosan film by addition of plasticizer and calcium chloride. The film thickness tends to decrease with PVA content. The addition of chitosan will increase film thickness, and it will decrease swelling index, elongation (%), and transmittance of UV rays. The additions of plasticizer to PVA/Chitosan film will increase film thickness and elongation (%), and it will decrease swelling index, tensile strength and transmittance of UV rays. The crosslink of PVA/Chitosan film with calcium chloride will decrease film thickness, swelling index, elongation (%) and transmittance of UV rays, and increase tensile strength.

Newtech - Comparison of three 1 kW thin-film solar cell installations; Newtech. Vergleich 3 x 1 kWp Duennschichtzellenanlagen

Energy Technology Data Exchange (ETDEWEB)

Renken, C.; Haeberlin, H.

2003-07-01

This final report for the Swiss Federal Office of Energy (SFOE) presents the results of tests made on 3 types of thin-film solar cells by the photovoltaics laboratory at the University of Applied Science in Burgdorf, Switzerland. The three 1-kW{sub p} installations are all mounted on the flat roof of an industrial building and deliver the power produced to the local electricity utility. The thin-film technologies tested are described. These include copper-indium-diselenide (CIS) cells, amorphous silicon tandem cells and amorphous silicon triple cells. The measurement equipment used is described and the results obtained are discussed. These showed that the CIS cells had the highest annual specific yield and that the triple cells had a relatively high performance ratio at low irradiance levels. The performance of the thin-film modules is also compared to that of conventional, crystalline modules installed at a nearby location.

The Effects of plasticizers and palmitic acid toward the properties of the carrageenan Film

Science.gov (United States)

Heru Wibowo, Atmanto; Listiyawati, Oktaviana; Purnawan, Candra

2016-02-01

Varied plasticizers and palmitic acid additive have been added in the carrageenan film. The film was made by mixing of the carrageenan and plasticizers (glycerol, polyethylene glycol, polyvinyl alcohol) with composition of 92:3, 90:6, 87:9, 84:12, 81:15(%w/w) and in the presence of palmitic acid as additive with 1%, 2%, 3%, 4%, 5% of total weight. Casting method was used for the film molding and drying at 60oC with the oven for 12 hours. To investigate the effects of plasticizers and additive, some mechanical tests on film were performed. The test result concludes that plasticizers in the film decreased the tensile strength and increased the elongation break of the carrageenan film. The additive of palmitic acid decreased the tensile strength of the carrageenan film and also decreased the-the water absorbance of the film. The highest tensile strength of films made was with the formulation of carrageenan: PEG with composition of 92:3 (% w/w). The highest elongation break of the film was for carrageenan:PVA with the composition of 81: 15 (%w/w) and carrageenan:palmitic acid:PEG with the composition of 92: 3: 1 (%w/w). The lowest water absorption of the film was achieved for carrageenan:PVA:palmitic acid with the composition of 87: 3: 5 (%w/w).

Crystallization kinetics of amorphous aluminum-tungsten thin films

Energy Technology Data Exchange (ETDEWEB)

Car, T.; Radic, N. [Rugjer Boskovic Inst., Zagreb (Croatia). Div. of Mater. Sci.; Ivkov, J. [Institute of Physics, Bijenicka 46, P.O.B. 304, HR-10000 Zagreb (Croatia); Babic, E.; Tonejc, A. [Faculty of Sciences, Physics Department, Bijenicka 32, P.O.B. 162, HR-10000 Zagreb (Croatia)

1999-01-01

Crystallization kinetics of the amorphous Al-W thin films under non-isothermal conditions was examined by continuous in situ electrical resistance measurements in vacuum. The estimated crystallization temperature of amorphous films in the composition series of the Al{sub 82}W{sub 18} to Al{sub 62}W{sub 38} compounds ranged from 800 K to 920 K. The activation energy for the crystallization and the Avrami exponent were determined. The results indicated that the crystallization mechanism in films with higher tungsten content was a diffusion-controlled process, whereas in films with the composition similar to the stoichiometric compound (Al{sub 4}W), the interface-controlled crystallization probably occurred. (orig.) With 4 figs., 1 tab., 26 refs.

Nanoscale abnormal grain growth in (001) epitaxial ceria

International Nuclear Information System (INIS)

Solovyov, Vyacheslav F.; Develos-Bagarinao, Katherine; Nykypanchuk, Dmytro

2009-01-01

X-ray reciprocal-space mapping and atomic force microscopy (AFM) are used to study kinetics and mechanisms of lateral grain growth in epitaxial (001) ceria (CeO 2 ) deposited by pulsed laser deposition on (001) yttria-stabilized zirconia (YSZ) and (12 lowbar 10) (r-cut) sapphire. Rate and character of the grain growth during postannealing at 1050 deg. C are found to be strongly dependent on the type of the epitaxial substrate. Films deposited on YSZ exhibit signatures of normal grain growth, which stagnated after the lateral grain size reaches 40 nm, consistent with the grain-boundary pinning by the thermal grooving. In contrast, when r-cut sapphire substrate was used, abnormal (secondary) grain growth is observed. A small population of grains grow to well over 100 nm consuming smaller, 100 nm large (001) terminations and rendering the sample single-crystalline quality. The grain growth is accompanied by reduction in lateral rms strain, resulting in a universal grain size--rms strain dependence. Analysis of the AFM and x-ray diffraction data leads to the conclusion that bimodal initial grain population consisting of grains with very different sizes is responsible for initiation of the abnormal growth in (001) CeO 2 films on r-cut sapphire. Due to different surface chemistry, when a YSZ substrate is used, the initial grain distribution is monomodal, therefore only normal growth is active. We demonstrate that a 2.2 deg. miscut of the sapphire substrate eliminates the large-grain population, thus suppressing abnormal grain growth. It is concluded that utilization of abnormal grain growth is a promising way for synthesis of large (001) ceria terminations.

Annealing effects on the ferromagnetic resonance linewidths of sputter-deposited Fe{sub 100−x}Co{sub x}(001) thin films (x < 11)

Energy Technology Data Exchange (ETDEWEB)

Kusaoka, A.; Kimura, J.; Takahashi, Y., E-mail: takahasy@yz.yamagata-u.ac.jp; Inaba, N. [Graduate School of Science and Engineering, Yamagata University, Yonezawa, Yamagata 992-8510 (Japan); Kirino, F. [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, Tokyo 110-8714 (Japan); Ohtake, M.; Futamoto, M. [Faculty of Science and Engineering, Chuo University, Tokyo 112-8551 (Japan)

2015-05-07

Effects of post-growth annealing on the magnetic damping of 3d transition alloy thin films were investigated. Fe{sub 100−x}Co{sub x} (x < 11 at. %) thin films were epitaxially deposited on GaAs(001) substrates by rf magnetron sputtering, and some of them were annealed without exposing to atmosphere. Electrical measurement showed that in-plane resistivity was smaller in the annealed films than in the as-deposited ones, indicating that the annealing mitigates crystalline imperfections and leads to reduced electron scattering rates. Magnetic damping was evaluated by the peak widths of ferromagnetic resonance (FMR) spectra obtained by a conventional Q-band spectrometer. Comparison of as-deposited and annealed specimens showed that the damping was decreased by annealing. Combined with the electrical and FMR measurements, these observations are consistent with the theoretical predictions that crystalline imperfections strongly influence the magnetic damping, both in intrinsic and extrinsic origins.

Quartz microbalance device for transfer into ultrahigh vacuum systems

International Nuclear Information System (INIS)

Stavale, F.; Achete, C. A.; Niehus, H.

2008-01-01

An uncomplicated quartz microbalance device has been developed which is transferable into ultrahigh vacuum (UHV) systems. The device is extremely useful for flux calibration of different kinds of material evaporators. Mounted on a commercial specimen holder, the device allows fast quartz microbalance transfer into the UHV and subsequent positioning exactly to the sample location where subsequent thin film deposition experiments shall be carried out. After backtransfer into an UHV sample stage, the manipulator may be loaded in situ with the specimen suited for the experiment. The microbalance device capability is demonstrated for monolayer and submonolayer vanadium depositions with an achieved calibration sensitivity of less the 0.001 ML coverage.

Structural and magnetic properties of [001] CoCr2O4 thin films

NARCIS (Netherlands)

Guzman, Roger; Heuver, Jeroen; Matzen, Sylvia; Magen, Cesar; Noheda, Beatriz

2017-01-01

The spinel CoCr2O4 (CCO) is one of the few bulk multiferroics with net magnetic moment. However, studies on the properties of CCO thin films are scarce. Here, we investigate the interplay between microstructure and magnetism of a series of CCO epitaxial thin films by means of x-ray diffraction,

Role of high microwave power on growth and microstructure of thick nanocrystalline diamond films: A comparison with large grain polycrystalline diamond films

Science.gov (United States)

Tang, C. J.; Fernandes, A. J. S.; Girão, A. V.; Pereira, S.; Shi, Fa-Nian; Soares, M. R.; Costa, F.; Neves, A. J.; Pinto, J. L.

2014-03-01

In this work, we study the growth habit of nanocrystalline diamond (NCD) films by exploring the very high power regime, up to 4 kW, in a 5 kW microwave plasma chemical vapour deposition (MPCVD) reactor, through addition of a small amount of nitrogen and oxygen (0.24%) into 4% CH4 in H2 plasma. The coupled effect of high microwave power and substrate temperature on NCD growth behaviour is systematically investigated by varying only power, while fixing the remaining operating parameters. When the power increases from 2 kW to 4 kW, resulting also in rise of the Si substrate temperature higher than 150 °C, the diamond films obtained maintain the NCD habit, while the growth rate increases significantly. The highest growth rate of 4.6 μm/h is achieved for the film grown at 4 kW, which represents a growth rate enhancement of about 15 times compared with that obtained when using 2 kW power. Possible factors responsible for such remarkable growth rate enhancement of the NCD films are discussed. The evolution of NCD growth characteristics such as morphology, microstructure and texture is studied by growing thick films and comparing it with that of large grain polycrystalline (PCD) films. One important characteristic of the NCD films obtained, in contrast to PCD films, is that irrespective of deposition time (i.e. film thickness), their grain size and surface roughness remain in the nanometer range throughout the growth. Finally, based on our present and previous experimental results, a potential parameter window is established for fast growth of NCD films under high power conditions.

Microtribological Mechanisms of Tungsten and Aluminum Nitride Films

Science.gov (United States)

Zhao, Hongjian; Mu, Chunyan; Ye, Fuxing

2016-04-01

Microtribology experiments were carried out on the W1- x Al x N films, deposited by radio frequency magnetron reactive sputtering on 304 stainless steel substrates and Si(100). Film wear mechanisms were investigated from the evolution of the friction coefficient and scanning electron microscopy observations. The results show that the WAlN films consist of a mixture of face-centered cubic W(Al)N and hexagonal wurtzite structure AlN phases and the preferred orientation changes from (111) to (200). The film damage after sliding test is mainly attributed to the composition and microstructure of the films. The amount of debris generated by friction is linked to the crack resistance. The better tribological properties for W1- x Al x N films ( x < 0.4) are mainly determined by the higher toughness.

Single-Crystal Y2O3 Epitaxially on GaAs(001 and (111 Using Atomic Layer Deposition

Directory of Open Access Journals (Sweden)

Y. H. Lin

2015-10-01

Full Text Available Single-crystal atomic-layer-deposited (ALD Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE GaAs(001-4 \\(\\times\\ 6 and GaAs(111A-2 \\(\\times\\ 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using \\textit{in-situ} reflection high-energy electron diffraction in our uniquely designed MBE/ALD multi-chamber system. More detailed studies on the crystallography of the hetero-structures were carried out using high-resolution synchrotron radiation X-ray diffraction. When deposited on GaAs(001, the Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films are of a cubic phase and have (110 as the film normal, with the orientation relationship being determined: Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\(\\(110\\[\\(001\\][\\(\\overline{1}10\\]//GaAs(\\(001\\[\\(110\\][\\(1\\overline{1}0\\]. On GaAs(\\(111\\A, the Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\ films are also of a cubic phase with (\\(111\\ as the film normal, having the orientation relationship of Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\(\\(111\\[\\(2\\overline{1}\\overline{1}\\] [\\(01\\overline{1}\\]//GaAs (\\(111\\ [\\(\\overline{2}11\\][\\(0\\overline{1}1\\]. The relevant orientation for the present/future integrated circuit platform is (\\(001\\. The ALD-Y\\(_{\\mathrm{2}}\\O\\(_{\\mathrm{3}}\\/GaAs(\\(001\\-4 \\(\\times\\ 6 has shown excellent electrical properties. These include small frequency dispersion in the capacitance-voltage CV curves at accumulation of ~7% and ~14% for the respective p- and n-type samples with the measured frequencies of 1 MHz to 100 Hz. The interfacial trap density (Dit is low of ~10\\(^{12}\\ cm\\(^{−2}\\eV\\(^{−1}\\ as extracted from measured quasi-static CVs. The frequency dispersion at accumulation and the D\\(_{it}\\ are the lowest ever achieved among all the ALD-oxides on GaAs(\\(001\\.

Structural, Thermal, Physical, Mechanical, and Barrier Properties of Chitosan Films with the Addition of Xanthan Gum.

Science.gov (United States)

de Morais Lima, Maria; Carneiro, Lucia Cesar; Bianchini, Daniela; Dias, Alvaro Renato Guerra; Zavareze, Elessandra da Rosa; Prentice, Carlos; Moreira, Angelita da Silveira

2017-03-01

Films based on chitosan and xanthan gum were prepared using casting technique aiming to investigate the potential of these polymers as packaging materials. Six formulations of films were studied varying the proportion of chitosan and xanthan gum: 100:0 (chitosan:xanthan gum, w/w, C100XG0 film); 90:10 (chitosan:xanthan gum, w/w, C90XG10 film); 80:20 (chitosan:xanthan gum, w/w, C80XG20 film); 70:30 (chitosan:xanthan gum, w/w, C70XG30 film); 60:40 (chitosan:xanthan gum, w/w, C60XG40 film); and 50:50 (chitosan:xanthan gum, w/w, C50XG50 film). The total quantity of solids (chitosan and xanthan gum) in the filmogenic solution was 1.5 g per 100 mL of aqueous solution for all treatments, according to the proportion of each polymer. The films were evaluated by their functional groups, structural, thermal, morphological, physical, mechanical, and barrier properties. All films have presented endothermic peaks in the range of 122 to 175 °C and broad exothermic peaks above 200 °C, which were assigned to the melting temperature and thermal decomposition, respectively. These results demonstrated that films with xanthan gum have the highest T m and Δ m H. The films containing higher content of xanthan gum show also the highest tensile strength and the lowest elongation. Xanthan gum addition did not affect the water vapor permeability, solubility, and moisture of films. This set of data suggests the formation of chitosan-xanthan complexes in the films. © 2017 Institute of Food Technologists®.

Scaling of surface roughness in sputter-deposited ZnO:Al thin films

International Nuclear Information System (INIS)

Mohanty, Bhaskar Chandra; Choi, Hong-Rak; Cho, Yong Soo

2009-01-01

We have studied surface roughness scaling of ZnO:Al thin films grown by rf magnetron sputtering of a compound target within framework of the dynamic scaling theory using atomic force microscopy. We have observed a crossover in scaling behavior of surface roughness at a deposition time of 25 min. Both the regimes are characterized by power-law dependence of local surface width w(r,t) on deposition time for small r, typical of anomalous scaling. The scaling exponents for the first regime indicate the existence of a new dynamics. For t≥25 min, the films follow super-rough scaling behavior with global exponents α=1.5±0.2 and β=1.03±0.01, and local exponents α local =1 and β local =0.67±0.05. The anomaly in the scaling behavior of the films is discussed in terms of the shadowing instability and bombardment of energetic particles during growth of the films.

Investigation on orientation, epitaxial growth and microstructure of a-axis-, c-axis-, (103)/(110)- and (113)-oriented YBa2Cu3O7-δ films prepared on (001), (110) and (111) SrTiO3 single crystal substrates by spray atomizing and coprecipitating laser chemical vapor deposition

Science.gov (United States)

Zhao, Pei; Wang, Ying; Huang, Zhi liang; Mao, Yangwu; Xu, Yuan Lai

2015-04-01

a-axis-, c-axis-, (103)/(110)- and (113)-oriented YBa2Cu3O7-δ (YBCO) films were pareared by spray atomizing and coprecipitating laser chemical vapor deposition. The surface of the a-axis-oriented YBCO film consisted of rectangular needle-like grains whose in-plane epitaxial growth relationship was YBCO [100] // STO [001] (YBCO [001] // STO [100]), and that of the c-axis-oriented YBCO film consisted of dense flat surface with epitaxial growth relationship of YBCO [001] // STO [001] (YBCO [100] //STO [100]). For the (103)/(110)-oriented and (113)-oriented YBCO film, they showed wedge-shaped and triangle-shaped grains, with corresponding in-plane epitaxial growth relationship of YBCO [110] // STO [110] (YBCO [010] // STO [010]) and YBCO [100] // STO [100] (YBCO [113] // STO [111], respectively.

Corrosion behaviour of electrodeposited nanocrystalline Ni-W and Ni-Fe-W alloys

International Nuclear Information System (INIS)

Sriraman, K.R.; Ganesh Sundara Raman, S.; Seshadri, S.K.

2007-01-01

The present work deals with evaluation of corrosion behaviour of electrodeposited nanocrystalline Ni-W and Ni-Fe-W alloys. Corrosion behaviour of the coatings deposited on steel substrates was studied using polarization and electrochemical impedance spectroscopy techniques in 3.5% NaCl solution while their passivation behaviour was studied in 1N sulphuric acid solution. The corrosion resistance of Ni-W alloys increased with tungsten content up to 7.54 at.% and then decreased. In case of Ni-Fe-W alloys it increased with tungsten content up to 9.20 at.% and then decreased. The ternary alloy coatings exhibited poor corrosion resistance compared to binary alloy coatings due to preferential dissolution of iron from the matrix. Regardless of composition all the alloys exhibited passivation behaviour over a wide range of potentials due to the formation of tungsten rich film on the surface

The mechanism of domain-wall structure formation in Ar-Kr submonolayer films on graphite

Directory of Open Access Journals (Sweden)

A. Patrykiejew

2014-12-01

Full Text Available Using Monte Carlo simulation method in the canonical ensemble, we have studied the commensurate-incommensurate transition in two-dimensional finite mixed clusters of Ar and Kr adsorbed on graphite basal plane at low temperatures. It has been demonstrated that the transition occurs when the argon concentration exceeds the value needed to cover the peripheries of the cluster. The incommensurate phase exhibits a similar domain-wall structure as observed in pure krypton films at the densities exceeding the density of a perfect (√3x√3R30º commensurate phase, but the size of commensurate domains does not change much with the cluster size. When the argon concentration increases, the composition of domain walls changes while the commensurate domains are made of pure krypton. We have constructed a simple one-dimensional Frenkel-Kontorova-like model that yields the results being in a good qualitative agreement with the Monte Carlo results obtained for two-dimensional systems.

Growth and characterization of textured YBaCo2O5+δ thin films grown on (001)-SrTiO3 via DC magnetron sputtering

International Nuclear Information System (INIS)

Galeano, V.; Arnache, O.; Supelano, I.; Vargas, C.A. Parra; Morán, O.

2016-01-01

Thin films of the layered cobaltite YBaCo 2 O 5+δ were successfully grown on (001)-oriented SrTiO 3 single-crystal substrates by means of DC magnetron sputtering. The 112 phase of the compound was stabilized by choosing an adequate Co reactant and through careful thermal treatment of the target. The results demonstrate the strong influence of these variables on the final phase of the compound. A substrate temperature of 1053 K and an oxygen pressure of 300 Pa seemed to be appropriate growing conditions for depositing (00ℓ)-textured YBaCo 2 O 5+δ thin films onto the chosen substrate. In like fashion to the polycrystalline YBaCo 2 O 5+δ , the films showed a clear sequence of antiferromagnetic–ferromagnetic–paramagnetic transitions within a narrow temperature range. Well-defined hysteresis loops were observed at temperatures as high as 270 K, which supports the existence of a FM order in the films. In turn, the dependence of the resistivity on the temperature shows a semiconductor-like behavior, without any distinguishable structure, within the temperature range measured (50–350 K). The analysis of the experimental data showed that the transport mechanism in the films is well described by using the Mott variable range hopping (VRH) conduction model. - Highlights: • YBaCo 2 O 5+δ thin films are grown on SrTiO 3 substrates. • Strong (00ℓ) reflections are observed in the X-ray diffraction pattern. • A clear sequence of magnetic transitions is observed. • Semiconducting-like behavior is verified.

Design and characterization of chitosan/zeolite composite films--Effect of zeolite type and zeolite dose on the film properties.

Science.gov (United States)

Barbosa, Gustavo P; Debone, Henrique S; Severino, Patrícia; Souto, Eliana B; da Silva, Classius F

2016-03-01

Chitosan films can be used as wound dressings for the treatment of chronic wounds and severe burns. The antimicrobial properties of these films may be enhanced by the addition of silver. Despite the antimicrobial activity of silver, several studies have reported the cytotoxicity as a factor limiting its biomedical applications. This problem may, however, be circumvented by the provision of sustained release of silver. Silver zeolites can be used as drug delivery platforms to extend the release of silver. The objective of this study was to evaluate the addition of clinoptilolite and A-type zeolites in chitosan films. Sodium zeolites were initially subjected to ion-exchange in a batch reactor. Films were prepared by casting technique using a 2% w/w chitosan solution and two zeolite doses (0.1 or 0.2% w/w). Films were characterized by thermal analysis, color analysis, scanning electron microscopy, X-ray diffraction, and water vapor permeation. The results showed that films present potential for application as dressing. The water vapor permeability is one of the main properties in wound dressings, the best results were obtained for A-type zeolite/chitosan films, which presented a brief reduction of this property in relation to zeolite-free chitosan film. On the other hand, the films containing clinoptilolite showed lower water vapor permeation, which may be also explained by the best distribution of the particles into the polymer which also promoted greater thermal resistance.

Polarization recovery in lead zirconate titanate thin films deposited on nanosheets-buffered Si (001)

Science.gov (United States)

Chopra, Anuj; Bayraktar, Muharrem; Nijland, Maarten; ten Elshof, Johan E.; Bijkerk, Fred; Rijnders, Guus

2016-12-01

Fatigue behavior of Pb(Zr,Ti)O3 (PZT) films is one of the deterrent factors that limits the use of these films in technological applications. Thus, understanding and minimization of the fatigue behavior is highly beneficial for fabricating reliable devices using PZT films. We have investigated the fatigue behavior of preferentially oriented PZT films deposited on nanosheets-buffered Si substrates using LaNiO3 bottom and top electrodes. The films show fatigue of up to 10% at 100 kHz, whereas no fatigue has been observed at 1 MHz. This frequency dependence of the fatigue behavior is found to be in accordance with Dawber-Scott fatigue model that explains the origin of the fatigue as migration of oxygen vacancies. Interestingly, a partial recovery of remnant polarization up to ˜97% of the maximum value is observed after 4×109 cycles which can be further extended to full recovery by increasing the applied electric field. This full recovery is qualitatively explained using kinetic approach as a manifestation of depinning of domains walls. The understanding of the fatigue behavior and polarization recovery that is explained in this paper can be highly useful in developing more reliable PZT devices.

Density functional study of CaN mono and bilayer on Cu(001)

International Nuclear Information System (INIS)

Zahedifar, Maedeh; Hashemifar, S. Javad; Akbarzadeh, Hadi

2014-01-01

Density functional - pseudopotential calculations are performed to provide first-principles insights into magnetic behaviour of bulk CaN and CaN monolayers on Cu(001) in the rock-salt (RS) and zinc-blende (ZB) structures. Our results indicate that both RS- and ZB-CaN exhibit half-metallic ferromagnetism originated from the incomplete 2p shell of the nitrogen ion. In contrast to the bulk CaN, the CaN monolayers on Cu(001) generally favor ZB structure. We argue that the more stable ZB-CaN thin films on Cu(001) are nonmagnetic, because of strong Cu-N bonding at the interface, while the less stable Ca terminated ZB-CaN thin films exhibit half-metallic ferromagnetism. The transition path between the high energy ferromagnetic and the stable nonmagnetic configurations of the ZB-CaN monolayer on Cu(001) are studied by using the nudged elastic band method. We observe a two stages transition and an activation barrier of about 1.18 eV in the minimum energy path of this transition

Novel Chiral Magnetic Domain Wall Structure in Fe/Ni/Cu(001) Films

Science.gov (United States)

Chen, G.; Zhu, J.; Quesada, A.; Li, J.; N'Diaye, A. T.; Huo, Y.; Ma, T. P.; Chen, Y.; Kwon, H. Y.; Won, C.; Qiu, Z. Q.; Schmid, A. K.; Wu, Y. Z.

2013-04-01

Using spin-polarized low energy electron microscopy, we discovered a new type of domain wall structure in perpendicularly magnetized Fe/Ni bilayers grown epitaxially on Cu(100). Specifically, we observed unexpected Néel-type walls with fixed chirality in the magnetic stripe phase. Furthermore, we find that the chirality of the domain walls is determined by the film growth order with the chirality being right handed in Fe/Ni bilayers and left handed in Ni/Fe bilayers, suggesting that the underlying mechanism is the Dzyaloshinskii-Moriya interaction at the film interfaces. Our observations may open a new route to control chiral spin structures using interfacial engineering in transition metal heterostructures.

Structure and morphology of ultrathin NiO layers on Ag(001)

Energy Technology Data Exchange (ETDEWEB)

Giovanardi, C.; Di Bona, A.; Altieri, S.; Luches, P.; Liberati, M.; Rossi, F.; Valeri, S

2003-03-20

The structure and morphology of thin NiO films prepared on Ag(001) by reactive growth at 460 K has been investigated as a function of the film thickness in the 3-20 monolayers range. Emphasis was on the study of the oxide layer misfit strain. Primary beam diffraction modulated electron emission and low energy electron diffraction experiments allowed the determination of the in-plane and out-of-plane strain in the oxide layer, while scanning tunneling microscopy, X-ray photoelectron spectroscopy and secondary electron imaging have been used to monitor the film morphology, stoichiometry and structure, respectively. The film strain begins to be removed at a critical thickness of 10 ML, while at 20 ML the film is fully relaxed. Strain analysis indicates that the Poisson ratio of the oxide layer is nearly equal to that of the bulk material.

Atomic arrangement in immiscible Ag–Cu alloys synthesized far-from-equilibrium

International Nuclear Information System (INIS)

Elofsson, V.; Almyras, G.A.; Lü, B.; Boyd, R.D.; Sarakinos, K.

2016-01-01

Physical attributes of multicomponent materials of a given chemical composition are determined by atomic arrangement at property-relevant length scales. A potential route to access a vast array of atomic configurations for material property tuning is by synthesis of multicomponent thin films using vapor fluxes with their deposition pattern modulated in the sub-monolayer regime. However, the applicability of this route for creating new functional materials is impeded by the fact that a fundamental understanding of the combined effect of sub-monolayer flux modulation, kinetics and thermodynamics on atomic arrangement is not available in the literature. Here we present a research strategy and verify its viability for addressing the aforementioned gap in knowledge. This strategy encompasses thin film synthesis using a route that generates multi-atomic fluxes with sub-monolayer resolution and precision over a wide range of experimental conditions, deterministic growth simulations and nanoscale microstructural probes. Investigations are focused on structure formation within the archetype immiscible Ag-Cu binary system, revealing that atomic arrangement at different length scales is governed by the arrival pattern of the film forming species, in conjunction with diffusion of near-surface Ag atoms to encapsulate 3D Cu islands growing on 2D Ag layers. The knowledge generated and the methodology presented herein provides the scientific foundation for tailoring atomic arrangement and physical properties in a wide range of miscible and immiscible multinary systems.

Polarization recovery in lead zirconate titanate thin films deposited on nanosheets-buffered Si (001

Directory of Open Access Journals (Sweden)

Anuj Chopra

2016-12-01

Full Text Available Fatigue behavior of Pb(Zr,TiO3 (PZT films is one of the deterrent factors that limits the use of these films in technological applications. Thus, understanding and minimization of the fatigue behavior is highly beneficial for fabricating reliable devices using PZT films. We have investigated the fatigue behavior of preferentially oriented PZT films deposited on nanosheets-buffered Si substrates using LaNiO3 bottom and top electrodes. The films show fatigue of up to 10% at 100 kHz, whereas no fatigue has been observed at 1 MHz. This frequency dependence of the fatigue behavior is found to be in accordance with Dawber–Scott fatigue model that explains the origin of the fatigue as migration of oxygen vacancies. Interestingly, a partial recovery of remnant polarization up to ∼97% of the maximum value is observed after 4×109 cycles which can be further extended to full recovery by increasing the applied electric field. This full recovery is qualitatively explained using kinetic approach as a manifestation of depinning of domains walls. The understanding of the fatigue behavior and polarization recovery that is explained in this paper can be highly useful in developing more reliable PZT devices.

EKSTRAK RUMPUT LAUT (Kappaphycus alvarezii SEBAGAI CROSS LINKING AGENT PADA PEMBENTUKAN EDIBLE FILM GELATIN KULIT IKAN NILA HITAM (Oreochromis mossambicus

Directory of Open Access Journals (Sweden)

Doddy Sutono

2016-02-01

Full Text Available Black tilapia (Oreochromis mossambicus skin gelatin was potential material for edible film formation. However, it needs some modifications to improve the mechanical and barier properties. One of modification is by adding a cross linking agent. Seaweed extract Kappaphycus alvarezii containing phenol compounds was oxidized to be converted into quinone. It was expected to act as a cross linking agent. The purpose of this study was to determine the characteristics of edible film from black tilapia skin gelatin by adding with oxidized K. alvarezii extract. Edible film was made by addition of K. alvarezii extract (E at concentration of 0%(E0; 2%(E1; 4%(E2; 6%(E3; 8%(E4 (v/w for each gelatin concentratios (G were 3g(G1; 6g(G2; 9g(G3; 12g(G4 into 150 ml destilled water containing 10% glycerol (w/w of gelatin. Gelatin film solution was agitated at 50oC for 30 min and dehydrated in a cabinet dryer at 50oC. The addition of oxidized K. alvarezii extract increased tensile Strength (TS and elongation at break properties. The highest TS was 3.08 MPa, shown by G4E1. The lowest water vapor permeability (WVP was ontained by G4E1 (0.01 x 10-10 g. H2O/m.s.Pa. Microstructure observation and FTIR spectra (SEM also showed an increased cross linking bonds in the G4E1 rather than in G4E0. The G4E1 seemd to be more compact than G4E0. The highest TS values and the lowest WVP on G4E1 were possibly caused by optimization concentration of the addition of oxidized K. alvarezii extract that could be optimum interaction with amino acid residues of polypeptide bond to form an optimal cross linking reaction. Keywords: Edible film, cross linking agent, oxidized  K. alvarezii extract, quinone, gelatin, O. mossambicus   ABSTRAK Gelatin kulit ikan nila hitam (Oreochromis mossambicus berpotensi sebagai pembentuk edible film namun perlu modifikasi untuk meningkatkan sifat mekanik dan bariernya terhadap uap air. Salah satu modifikasi adalah dengan penambahan cross linking agent

Starch behaviors and mechanical properties of starch blend films with different plasticizers.

Science.gov (United States)

Nguyen Vu, Hoang Phuong; Lumdubwong, Namfone

2016-12-10

The main objective of the study was to gain insight into structural and mechanical starch behaviors of the plasticized starch blend films. Mechanical properties and starch behaviors of cassava (CS)/and mungbean (MB) (50/50, w/w) starch blend films containing glycerol (Gly) or sorbitol (Sor) at 33% weight content were investigated. It was found that tensile strength TS and %E of the Gly-CSMB films were similar to those of MB films; but%E of all Sor-films was identical. TS of plasticized films increased when AM content and crystallinity increased. When Sor was substituted for Gly, crystallinity of starch films and their TS increased. The CSMB and MB films had somewhat a similar molecular profile and comparable mechanical properties. Therefore, it was proposed the starch molecular profile containing amylopectin with high M¯w, low M¯w of amylose, and the small size of intermediates may impart the high TS and%E of starch films. Copyright © 2016 Elsevier Ltd. All rights reserved.

Microstructure and thermochromic properties of VOX-WOX-VOX ceramic thin films

International Nuclear Information System (INIS)

Khamseh, S.; Ghahari, M.; Araghi, H.; Faghihi Sani, M.A.

2016-01-01

W-doped VO 2 films have been synthesized via oxygen annealing of V-W-V (vanadium-tungsten-vanadium) multilayered films. The effects of middle layer's thickness of V-W-V multilayered film on structure and properties of VO X -WO X -VO X ceramic thin films were investigated. The as-deposited V-W-V multilayered film showed amorphous-like structure when mixed structure of VO 2 (M) and VO 2 (B) was formed in VO X -WO X -VO X ceramic thin films. Tungsten content of VO X -WO X -VO X ceramic thin films increased with increasing middle layer's thickness. With increasing middle layer's thickness, room temperature square resistance (R sq ) of VO X -WO X -VO X ceramic thin films increased from 65 to 86 kΩ/sq. The VO X -WO X -VO X ceramic thin film with the thinnest middle layer showed significant SMT (semiconductor-metal transition) when SMT became negligible on increasing middle layer's thickness. (orig.)

Synchrotron X-Ray Study of Melting in Submonolayer Ar and other Rare-Gas Films on Graphite

DEFF Research Database (Denmark)

McTague, J. P.; Als-Nielsen, Jens Aage; Bohr, Jakob

1982-01-01

Synchrotron x-ray diffraction studies of the (10) peak of Ar on the (001) surface of ZYX graphite show a sharp but continuous broadening of the Bragg peak with increasing temperature. Below a coverage of ∼ 1 Ar atom per six surface carbon atoms (ρ=1) the onset of this transition occurs...

Influence of corrosive solutions on microhardness and chemistry of magnesium oxide /001/ surfaces

Science.gov (United States)

Ishigaki, H.; Miyoshi, K.; Buckley, D. H.

1982-01-01

X-ray photoelectron spectroscopy analyses and hardness experiments were conducted on cleaved magnesium oxide /001/ surfaces. The magnesium oxide bulk crystals were cleaved to specimen size along the /001/ surface, and indentations were made on the cleaved surface in corrosive solutions containing HCl, NaOH, or HNO3 and in water without exposing the specimen to any other environment. The results indicated that chloride (such as MgCl2) and sodium films are formed on the magnesium oxide surface as a result of interactions between an HCl-containing solution and a cleaved magnesium oxide surface. The chloride films soften the magnesium oxide surface. In this case microhardness is strongly influenced by the pH value of the solution. The lower the pH, the lower the microhardness. Sodium films, which are formed on the magnesium oxide surface exposed to an NaOH containing solution, do not soften the magnesium oxide surface.

The role of electrolyte pH on phase evolution and magnetic properties of CoFeW codeposited films

International Nuclear Information System (INIS)

Ghaferi, Z.; Sharafi, S.; Bahrololoom, M.E.

2016-01-01

Highlights: • Deposition tends to anomalous-induced fashion at higher pH values. • The structure of the coatings depend on electrolyte pH effectively. • Grain size of two-phase structure films is lower than single-phase solid solutions. • Coercivity of the coatings changed by tungsten content and surface defects. • The highest pH value produced coating with superior magnetic behaviour. - Abstract: In this research, nanocrystalline Co–Fe–W alloy coatings were electrodeposited from a citrate-borate bath. The influence of electrolyte pH on the morphology, microstructure and magnetic properties of these films was also studied. By increasing pH value, the amount of iron content increased from 30 to 55 wt.% which indicates anomalous fashion at higher pH electrolytes. X-ray diffraction patterns showed that the structure of these films depend on electrolyte pH effectively. However, two-phase structure coatings showed smaller average grain size compared with one- phase solid solutions. Vibrating sample magnetometer measurements indicated that the coercivity of the coatings was in the range of 21–76 Oe. However, the highest pH value produced coating with superior magnetic behaviour. Microhardness of the coatings reached its maximum value at about 260HV which is referred to the highest tungsten content.

Surface interactions of a W-DLC-coated biomedical AISI 316L stainless steel in physiological solution.

Science.gov (United States)

Antunes, Renato A; de Lima, Nelson Batista; Rizzutto, Márcia de Almeida; Higa, Olga Zazuco; Saiki, Mitiko; Costa, Isolda

2013-04-01

The corrosion stability of a W-DLC coated surgical AISI 316L stainless steel in Hanks' solution has been evaluated. Particle induced X-ray emission (PIXE) measurements were performed to evaluate the incorporation of potentially bioactive elements from the physiological solution. The film structure was analyzed by X-ray diffractometry and micro-Raman spectroscopy. The wear behavior was assessed using the sphere-on-disc geometry. The in vitro biocompatibility of the W-DLC film was evaluated by cytotoxicity tests. The corrosion resistance of the stainless steel substrate decreased in the presence of the PVD layer. EIS measurements suggest that this behavior was closely related to the corrosion attack through the coating pores. PIXE measurements revealed the presence of Ca and P in the W-DLC film after immersion in Hanks' solution. This result shows that the PIXE technique can be applied to identify and evaluate the incorporation of bioactive elements by W-DLC films. The film showed good wear resistance and biocompatibility.

Growth of pentacene on Ag(1 1 1) surface: A NEXAFS study

International Nuclear Information System (INIS)

Pedio, M.; Doyle, B.; Mahne, N.; Giglia, A.; Borgatti, F.; Nannarone, S.; Henze, S.K.M.; Temirov, R.; Tautz, F.S.; Casalis, L.; Hudej, R.; Danisman, M.F.; Nickel, B.

2007-01-01

Thin films of pentacene (C 22 H 14 ) have become widely used in the field of organic electronics. Here films of C 22 H 14 of thickness ranging from submonolayer to multilayer were thermally deposited on Ag(1 1 1) surface. The determination of molecular geometry in pentacene films on Ag(1 1 1) studied by X-ray absorption at different stages of growth up to one monolayer is presented. XAS spectra at the C K-edge were collected as a function of the direction of the electric field at the surface. The different features of the spectra were assigned to resonances related to the various molecular unoccupied states by the comparison with the absorption coefficient of the pentacene gas phase. The transitions involving antibonding π states show a pronounced angular dependence for all the measured coverages, from submonolayer to multilayer. The spectra analysis indicates a nearly planar chemisorption of the first pentacene layer with a tilt angle of 10 o

Design and characterization of chitosan/zeolite composite films — Effect of zeolite type and zeolite dose on the film properties

International Nuclear Information System (INIS)

Barbosa, Gustavo P.; Debone, Henrique S.; Severino, Patrícia; Souto, Eliana B.; Silva, Classius F. da

2016-01-01

Chitosan films can be used as wound dressings for the treatment of chronic wounds and severe burns. The antimicrobial properties of these films may be enhanced by the addition of silver. Despite the antimicrobial activity of silver, several studies have reported the cytotoxicity as a factor limiting its biomedical applications. This problem may, however, be circumvented by the provision of sustained release of silver. Silver zeolites can be used as drug delivery platforms to extend the release of silver. The objective of this study was to evaluate the addition of clinoptilolite and A-type zeolites in chitosan films. Sodium zeolites were initially subjected to ion-exchange in a batch reactor. Films were prepared by casting technique using a 2% w/w chitosan solution and two zeolite doses (0.1 or 0.2% w/w). Films were characterized by thermal analysis, color analysis, scanning electron microscopy, X-ray diffraction, and water vapor permeation. The results showed that films present potential for application as dressing. The water vapor permeability is one of the main properties in wound dressings, the best results were obtained for A-type zeolite/chitosan films, which presented a brief reduction of this property in relation to zeolite-free chitosan film. On the other hand, the films containing clinoptilolite showed lower water vapor permeation, which may be also explained by the best distribution of the particles into the polymer which also promoted greater thermal resistance. - Highlights: • Zeolite/chitosan composite films were prepared by casting technique. • Micrographs showed slight difference according to the content and A-type zeolite. • The barrier properties of the films were suitable to the dressing application. • Film characterization suggested that zeolites interacted with the chitosan chain.

Design and characterization of chitosan/zeolite composite films — Effect of zeolite type and zeolite dose on the film properties

Energy Technology Data Exchange (ETDEWEB)

Barbosa, Gustavo P.; Debone, Henrique S. [Instituto de Ciências Ambientais, Químicas e Farmacêuticas, Universidade Federal de São Paulo, Diadema (Brazil); Severino, Patrícia [Universidade Tiradentes, Instituto de Tecnologia e Pesquisa, Aracaju (Brazil); Souto, Eliana B. [Department of Pharmaceutical Technology, Faculty of Pharmacy, University of Coimbra (FFUC), Pólo das Ciências da Saúde, Azinhaga de Santa Comba, 3000-548, Coimbra (Portugal); Center for Neuroscience and Cell Biology & Institute for Biomedical Imaging and Life Sciences (CNC-IBILI), University of Coimbra, Pólo das Ciências da Saúde, Azinhaga de Santa Comba, 3000-548, Coimbra (Portugal); Silva, Classius F. da, E-mail: cfsilva@unifesp.br [Instituto de Ciências Ambientais, Químicas e Farmacêuticas, Universidade Federal de São Paulo, Diadema (Brazil)

2016-03-01

Chitosan films can be used as wound dressings for the treatment of chronic wounds and severe burns. The antimicrobial properties of these films may be enhanced by the addition of silver. Despite the antimicrobial activity of silver, several studies have reported the cytotoxicity as a factor limiting its biomedical applications. This problem may, however, be circumvented by the provision of sustained release of silver. Silver zeolites can be used as drug delivery platforms to extend the release of silver. The objective of this study was to evaluate the addition of clinoptilolite and A-type zeolites in chitosan films. Sodium zeolites were initially subjected to ion-exchange in a batch reactor. Films were prepared by casting technique using a 2% w/w chitosan solution and two zeolite doses (0.1 or 0.2% w/w). Films were characterized by thermal analysis, color analysis, scanning electron microscopy, X-ray diffraction, and water vapor permeation. The results showed that films present potential for application as dressing. The water vapor permeability is one of the main properties in wound dressings, the best results were obtained for A-type zeolite/chitosan films, which presented a brief reduction of this property in relation to zeolite-free chitosan film. On the other hand, the films containing clinoptilolite showed lower water vapor permeation, which may be also explained by the best distribution of the particles into the polymer which also promoted greater thermal resistance. - Highlights: • Zeolite/chitosan composite films were prepared by casting technique. • Micrographs showed slight difference according to the content and A-type zeolite. • The barrier properties of the films were suitable to the dressing application. • Film characterization suggested that zeolites interacted with the chitosan chain.

Crossover of the preferred growth orientation of AlN/Si(001) films during off-axis radio frequency sputter growth

International Nuclear Information System (INIS)

Jang, H.W.; Kang, H.C.; Noh, D.Y.; Yi, M.S.

2003-01-01

We found that the crystallographic orientation of AlN/Si(001) thin films crosses over from the substrate normal towards the direction of incident flux during off-axis radio frequency magnetron sputter growth. At high growth temperatures, the crystalline c-axis orientation is maintained along the substrate normal direction initially, but jumps discontinuously towards the direction of incident flux. In contrast, at low growth temperatures, the c-axis direction shifts continuously towards the incident flux direction and saturates in the middle agreeing with the tangential rule of oblique deposition, i.e., tan β=1/2 tan α, where α and β denote the angles of incident flux and column incline, respectively. Selected area transmission electron diffraction patterns are consistent with the crossover measured by in situ x-ray scattering experiments

Electrical conductivity modification using silver nano particles of Jatropha Multifida L. and Pterocarpus Indicus w. extracts films

Energy Technology Data Exchange (ETDEWEB)

Diantoro, Markus, E-mail: markus.diantoro.fmipa@um.ac.id; Hidayati, Nisfi Nahari Sani; Latifah, Rodatul; Fuad, Abdulloh; Nasikhudin,; Sujito,; Hidayat, Arif [Department of Physics, Faculty of Mathematics and Natural Science, Universitas Negeri Malang, Jl. Semarang 5 Malang 65145 (Indonesia)

2016-03-11

Natural polymers can be extracted from leaf or stem of plants. Pterocarpus Indicus W. (PIW) and Jatropha Multifida L. (JIL) plants are good candidate as natural polymer sources. PIW and JIW polymers contain chemical compound so-called flavonoids which has C{sub 6}-C{sub 3}-C{sub 6} carbons conjugated configuration. The renewable type of polymer as well as their abundancy of flavonoid provide us to explore their physical properties. A number of research have been reported related to broad synthesis method and mechanical properties. So far there is no specific report of electrical conductivity associated to PIW and JIL natural polymers. In order to obtain electrical conductivity and its crystallinity of the extracted polymer films, it was induced on them a various fraction of silver nano particles. The film has been prepared by means of spin coating method on nickel substrate. It was revealed that FTIR spectra confirm the existing of rutine flavonoid. The crystallinity of the samples increase from 0.66%, to 4.11% associated to the respective various of silver fractions of 0.1 M to 0.5 M. SEM images show that there are some grains of silver in the film. The nature of electric conductivity increases a long with the addition of silver. The electrical conductivity increase significantly from 3.22 S/cm, to 542.85 S/cm. On the other hand, PIW films also shows similar trends that increase of Ag induce the increase its crystallinity as well as its electrical conductivity at semiconducting level. This result opens a prospective research and application of the green renewable polymer as optoelectronic materials.

Stabilization of thin liquid films by repulsive van der waals force

KAUST Repository

Li, Erqiang

2014-05-13

Using high-speed video recording of bubble rise experiments, we study the stability of thin liquid films trapped between a rising bubble and a surfactant-free liquid-liquid meniscus interface. Using different combinations of nonpolar oils and water that are all immiscible, we investigate the extent to which film stability can be predicted by attractive and repulsive van der Waals (vdW) interactions that are indicated by the relative magnitude of the refractive indices of the liquid combinations, for example, water (refractive index, n = 1.33), perfluorohexane (n = 1.23), and tetradecane (n = 1.43). We show that, when the film-forming phase was oil (perfluorohexane or tetradecane), the stability of the film could always be predicted from the sign of the vdW interaction, with a repulsive vdW force resulting in a stable film and an attractive vdW force resulting in film rupture. However, if aqueous electrolyte is the film-forming bulk phase between the rising air bubble and the upper oil phase, the film always ruptured, even when a repulsive vdW interaction was predicted. We interpret these results as supporting the hypothesis that a short-ranged hydrophobic attraction determines the stability of the thin water film formed between an air phase and a nonpolar oil phase. © 2014 American Chemical Society.

Comparative study of the mechanical properties of nanostructured thin films on stretchable substrates

Energy Technology Data Exchange (ETDEWEB)

Djaziri, S. [Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Straße 1, 40237 Düsseldorf (Germany); Institut P' (UPR 3346 CNRS), Université de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Renault, P.-O.; Le Bourhis, E.; Goudeau, Ph., E-mail: Philippe.goudeau@univ-poitiers.fr [Institut P' (UPR 3346 CNRS), Université de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Faurie, D. [LSPM, (UPR 3407 CNRS), Université Paris 13, Institut Galilée, 99 avenue Jean-Baptiste Clément, 93430 Villetaneuse (France); Geandier, G. [Institut Jean Lamour (UMR 3079 CNRS), Université de Lorraine, Parc de Saurupt, CS 50840, 54011 NANCY Cedex (France); Mocuta, C.; Thiaudière, D. [Synchrotron SOLEIL, L' Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette Cedex (France)

2014-09-07

Comparative studies of the mechanical behavior between copper, tungsten, and W/Cu nanocomposite based on copper dispersoïd thin films were performed under in-situ controlled tensile equi-biaxial loadings using both synchrotron X-ray diffraction and digital image correlation techniques. The films first deform elastically with the lattice strain equal to the true strain given by digital image correlation measurements. The Cu single thin film intrinsic elastic limit of 0.27% is determined below the apparent elastic limit of W and W/Cu nanocomposite thin films, 0.30% and 0.49%, respectively. This difference is found to be driven by the existence of as-deposited residual stresses. Above the elastic limit on the lattice strain-true strain curves, we discriminate two different behaviors presumably footprints of plasticity and fracture. The Cu thin film shows a large transition domain (0.60% true strain range) to a plateau with a smooth evolution of the curve which is associated to peak broadening. In contrast, W and W/Cu nanocomposite thin films show a less smooth and reduced transition domain (0.30% true strain range) to a plateau with no peak broadening. These observations indicate that copper thin film shows some ductility while tungsten/copper nanocomposites thin films are brittle. Fracture resistance of W/Cu nanocomposite thin film is improved thanks to the high compressive residual stress and the elimination of the metastable β-W phase.

Controlled nanostructuration of polycrystalline tungsten thin films

Energy Technology Data Exchange (ETDEWEB)

Girault, B. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Institut de Recherche en Genie Civil et Mecanique (UMR CNRS 6183), LUNAM Universite, Universite de Nantes, Centrale Nantes, CRTT, 37 Bd de l' Universite, BP 406, 44602 Saint-Nazaire Cedex (France); Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Sauvage, T. [CEMHTI/CNRS (UPR 3079 CNRS), Universite d' Orleans, 3A rue de la Ferollerie, 45071 Orleans Cedex 2 (France)

2013-05-07

Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

Unusual strain in homoepitaxial CdTe(001) layers grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Heinke, H.; Waag, A.; Moeller, M.O.; Regnet, M.M.; Landwehr, G. [Physikalisches Institut, Univ. Wuerzburg (Germany)

1994-01-01

For homoepitaxial CdTe(001) films grown by molecular beam epitaxy onto CdTe(001) substrates, a difference between the lattice constants of the substrate and the layer was systematically observed using high resolution X-ray diffraction. Reciprocal space maps point out an unusual strain state of such layers which is indicated by the position of their reciprocal lattice points. They lie in a section of reciprocal space which is usually forbidden by elasticity theory. The strain is laterally anisotropic leading to a monoclinic symmetry of the thin films. The lateral strain is depth dependent. Possible reasons for the formation of the unusual strain are discussed, and a correlation of the unusual strain with the growth conditions is attempted

Infrared spectroscopy of molecular submonolayers on surfaces by infrared scanning tunneling microscopy: tetramantane on Au111.

Science.gov (United States)

Pechenezhskiy, Ivan V; Hong, Xiaoping; Nguyen, Giang D; Dahl, Jeremy E P; Carlson, Robert M K; Wang, Feng; Crommie, Michael F

2013-09-20

We have developed a new scanning-tunneling-microscopy-based spectroscopy technique to characterize infrared (IR) absorption of submonolayers of molecules on conducting crystals. The technique employs a scanning tunneling microscope as a precise detector to measure the expansion of a molecule-decorated crystal that is irradiated by IR light from a tunable laser source. Using this technique, we obtain the IR absorption spectra of [121]tetramantane and [123]tetramantane on Au(111). Significant differences between the IR spectra for these two isomers show the power of this new technique to differentiate chemical structures even when single-molecule-resolved scanning tunneling microscopy (STM) images look quite similar. Furthermore, the new technique was found to yield significantly better spectral resolution than STM-based inelastic electron tunneling spectroscopy, and to allow determination of optical absorption cross sections. Compared to IR spectroscopy of bulk tetramantane powders, infrared scanning tunneling microscopy (IRSTM) spectra reveal narrower and blueshifted vibrational peaks for an ordered tetramantane adlayer. Differences between bulk and surface tetramantane vibrational spectra are explained via molecule-molecule interactions.

In situ infrared spectroscopic study of the electrochromic reactions of tungsten trioxide films

International Nuclear Information System (INIS)

Habib, M.A.; Maheswari, S.P.

1991-01-01

This paper reports on thin WO 3 films which are transparent in the oxidized state and colored in the reduced state. These changes in optical properties are associated with compositional variations of the material. Changes in vibrational intensities of W double-bond O, W emdash O, and W double-bond O emdash H bonds in the electrochromic WO 3 film were detected by an in situ FTIR technique at various stages of reduction (coloration). The absorbance due to O emdash H stretching and bending vibrations was found to increase during the electrochemical reduction of the film, indicating the incorporation of water into the film along with the formation of H x WO 3 bronze during coloration. The absorbance due to W double-bond O vibration decreased while that due to W emdash O vibration increased during reduction. These observations suggest that during the coloration process W double-bond O bonds break and new W emdash O bonds form in the film, and thus, provide direct evidence for the electrochromic reaction. O 2 W double-bond O + xH + + xe - ↔ O 2 W emdash O emdash H x

Humidity sensing properties of WO3 thick film resistor prepared by screen printing technique

International Nuclear Information System (INIS)

Garde, Arun S

2014-01-01

Highlights: • Polycrystalline WO 3 Thick films are fabricated by screen printing technique. • Monoclinic phases were the majority in formation of films. • The peak at 1643 cm −1 shows stretching vibrations attributed to W-OH of adsorbed H 2 O. • Absorption peaks in the range 879–650 cm −1 are attributed to the stretching W-O-W bonds. • Increase in resistance with decrease in RH when exposed to 20–100% RH. - Abstract: Thick films of tungsten oxide based were prepared using standard screen printing technique. To study the effect of temperature on the thick films were fired at different temperature for 30 min in air atmosphere. The WO 3 thick films were characterized with X-ray diffraction, scanning electron microscopy and EDAX for elemental analysis. The formation of mixed phases of the film together with majority of monoclinic phase was observed. IR spectra confirm the peak at 1643 cm −1 clearly shows stretching vibrations attributed to the W-OH bending vibration mode of the adsorbed water molecules. The absorption peaks in the range 879–650 cm −1 are attributed to the stretching W-O-W bonds (i.e. ν [W-O inter -W]). The peak located at 983 cm −1 belong to W=O terminal of cluster boundaries. A change in the resistance was observed with respect to the relative humidity when the WO 3 thick films were exposed to a wide humidity range of 20–100%. An increasing firing temperature of WO 3 film increases with the sensitivity. The parameters such as sensitivity and hysteresis of the WO 3 film sensors have been evaluated

Novel films for drug delivery via the buccal mucosa using model soluble and insoluble drugs.

Science.gov (United States)

Kianfar, Farnoosh; Chowdhry, Babur Z; Antonijevic, Milan D; Boateng, Joshua S

2012-10-01

Bioadhesive buccal films are innovative dosage forms with the ability to adhere to the mucosal surface and subsequently hydrate to release and deliver drugs across the buccal membrane. This study aims to formulate and characterize stable carrageenan (CAR) based buccal films with desirable drug loading capacity. The films were prepared using CAR, poloxamer (POL) 407, various grades of PEG (plasticizer) and loaded with paracetamol (PM) and indomethacin (IND) as model soluble and insoluble drugs, respectively. The films were characterized by texture analysis, thermogravimetric analysis (TGA), DSC, scanning electron microscopy, X-ray powder diffraction (XRPD), and in vitro drug release studies. Optimized films were obtained from aqueous gels comprising 2.5% w/w κ-CAR 911, 4% w/w POL 407 and 6% w/w (PM) and 6.5% w/w (IND) of PEG 600 with maximum drug loading of 1.6% w/w and 0.8 % w/w for PM and IND, respectively. TGA showed residual water content of approximately 5% of films dry weight. DSC revealed a T(g) at 22.25 and 30.77°C for PM and IND, respectively, implying the presence of amorphous forms of both drugs which was confirmed by XRPD. Drug dissolution profiles in simulated saliva showed cumulative percent release of up to 45 and 57% of PM and IND, respectively, within 40 min of contact with dissolution medium simulating saliva.

Oxygen permeability of nanocomposite-based polyolefin films; Permeabilidade do oxigenio em filmes nanocompositos poliolefinicos

Energy Technology Data Exchange (ETDEWEB)

Fujiyama-Novak, Jane H.; Amaral, Rafael A.; Ruffino, Vivianne; Habert, A. Claudio; Borges, Cristiano P., E-mail: jane@peq.coppe.ufrj.br [Coordenacao dos Programas de Pos-Graduacao em Engenharia (PEQ/COPPE/UFRJ), Rio de Janeiro, RJ (Brazil); Mano, Barbara [BRASKEM S.A., Duque de Caxias, RJ (Brazil)

2015-07-01

Polyethylene and polypropylene are vastly employed for packaging due to their high versatility and low cost. However, their films are permeable at different degree to small molecules like gases and the use of additives improves the barrier properties. Therefore, the aim of this work is to investigate the effect of organically modified montmorillonite on oxygen transport properties of PE and PP films. Nanocomposites were prepared by means of polymer dissolution in organic solvent and subsequent nanoparticle addition at 3, 5 and 10% (w/w). Scanning electron microscopy images of the films indicate the presence of microcavities and some agglomerated nanoclay. On the other hand, X-rays diffraction analysis shows clay in well-dispersed state independent of polyolefin type. Enhancement of oxygen barrier is achieved, but this property is dependent on the nanoclay content, polyolefin type and film morphology. (author)

Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

Energy Technology Data Exchange (ETDEWEB)

Tripathy, Sumanta K.; Rajeswari, V. P. [Centre for Nano Science and Technology, GVP College of Engineering (Autonomous), Visakhapatnam- 530048 (India)

2014-01-28

Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

International Nuclear Information System (INIS)

Tripathy, Sumanta K.; Rajeswari, V. P.

2014-01-01

Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn 3 O 4 , corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells

Thermal Conductivity in Nanostructured Films: From Single Cellulose Nanocrystals to Bulk Films

Science.gov (United States)

Jairo A. Diaz; Zhijiang Ye; Xiawa Wu; Arden L. Moore; Robert J. Moon; Ashlie Martini; Dylan J. Boday; Jeffrey P. Youngblood

2014-01-01

We achieved a multiscale description of the thermal conductivity of cellulose nanocrystals (CNCs) from single CNCs (~­0.72−5.7 W m−1 K−1) to their organized nanostructured films (~­0.22−0.53 W m−1 K−1) using...

Dispersion Process and Effect of Oleic Acid on Properties of Cellulose Sulfate- Oleic Acid Composite Film

Science.gov (United States)

Chen, Guo; Zhang, Bin; Zhao, Jun

2015-01-01

The cellulose sulfate (CS) is a newly developed cellulose derivative. The work aimed to investigate the effect of oleic acid (OA) content on properties of CS-OA film. The process of oleic acid dispersion into film was described to evaluate its effect on the properties of the film. Among the formulations evaluated, the OA addition decreased the solubility and water vapor permeability of the CS-OA film. The surface contact angle changed from 64.2° to 94.0° by increasing CS/OA ratio from 1:0 to 1:0.25 (w/w). The TS increased with OA content below 15% and decreased with OA over 15%, but the ε decreased with higher OA content. The micro-cracking matrices and micro pores in the film indicated the condense structure of the film destroyed by the incorporation of oleic acid. No chemical interaction between the OA and CS was observed in the XRD and FTIR spectrum. Film formulation containing 2% (w/w) CS, 0.3% (w/w) glycerol and 0.3% (w/w) OA, showed good properties of mechanic, barrier to moisture and homogeneity.

Atomic layer deposition of W{sub x}N/TiN and WN{sub x}C{sub y}/TiN nanolaminates

Energy Technology Data Exchange (ETDEWEB)

Elers, K.-E.; Saanila, V.; Li, W.-M.; Soininen, P.J.; Kostamo, J.T.; Haukka, S.; Juhanoja, J.; Besling, W.F.A

2003-06-23

Diffusion barrier materials, such as TiN, W{sub x}N, WN{sub x}C{sub y} and their nanolaminates were deposited by atomic layer deposition method. TiN film exhibited excellent properties, but W{sub x}N film exhibited high resistivity despite the low residue concentration. Both TiN and W{sub x}N films suffered from serious incompatibility with the copper metal. WN{sub x}C{sub y} film was deposited by introducing triethylboron as a reducing agent for tungsten. Excellent film properties were obtained, including very good compatibility with the copper metal, evident as strong adhesion and no pitting on the copper surface. Nanolaminate barrier stacks of W{sub x}N/TiN and WN{sub x}C{sub y}/TiN were successfully deposited. TiN deposition did not cause copper pitting when thin WN{sub x}C{sub y} film was deposited underneath.

Self-assembled metal nano-multilayered film prepared by co-sputtering method

Science.gov (United States)

Xie, Tianle; Fu, Licai; Qin, Wen; Zhu, Jiajun; Yang, Wulin; Li, Deyi; Zhou, Lingping

2018-03-01

Nano-multilayered film is usually prepared by the arrangement deposition of different materials. In this paper, a self-assembled nano-multilayered film was deposited by simultaneous sputtering of Cu and W. The Cu/W nano-multilayered film was accumulated by W-rich layer and Cu-rich layer. Smooth interfaces with consecutive composition variation and semi-coherent even coherent relationship were identified, indicating that a spinodal-like structure with a modulation wavelength of about 20 nm formed during co-deposition process. The participation of diffusion barrier element, such as W, is believed the essential to obtain the nano-multilayered structure besides the technological parameters.

Controlled deposition of size-selected MnO nanoparticle thin films for water splitting applications: reduction of onset potential with particle size

Science.gov (United States)

Khojasteh, Malak; Haghighat, Shima; Dawlaty, Jahan M.; Kresin, Vitaly V.

2018-05-01

Emulating water oxidation catalyzed by the oxomanganese clusters in the photosynthetic apparatus of plants has been a long-standing scientific challenge. The use of manganese oxide films has been explored, but while they may be catalytically active on the surface, their poor conductivity hinders their overall performance. We have approached this problem by using manganese oxide nanoparticles with sizes of 4, 6 and 8 nm, produced in a sputter-gas-aggregation source and soft-landed onto conducting electrodes. The mass loading of these catalytic particles was kept constant and corresponded to 45%–80% of a monolayer coverage. Measurements of the water oxidation threshold revealed that the onset potential decreases significantly with decreasing particle size. The final stoichiometry of the catalytically active nanoparticles, after exposure to air, was identified as predominantly MnO. The ability of such a sub-monolayer film to lower the reaction threshold implies that the key role is played by intrinsic size effects, i.e., by changes in the electronic properties and surface fields of the nanoparticles with decreasing size. We anticipate that this work will serve to bridge the knowledge gap between bulk thick film electrocatalysts and natural photosynthetic molecular-cluster complexes.

Characteristics of W Doped Nanocrystalline Carbon Films Prepared by Unbalanced Magnetron Sputtering.

Science.gov (United States)

Park, Yong Seob; Park, Chul Min; Kim, Nam-Hoon; Kim, Jae-Moon

2016-05-01

Nanocrystalline tungsten doped carbon (WC) films were prepared by unbalanced magnetron sputtering. Tungsten was used as the doping material in carbon thin films with the aim of application as a contact strip in an electric railway. The structural, physical, and electrical properties of the fabricated WC films with various DC bias voltages were investigated. The films had a uniform and smooth surface. Hardness and frication characteristics of the films were improved, and the resistivity and sheet resistance decreased with increasing negative DC bias voltage. These results are associated with the nanocrystalline WC phase and sp(2) clusters in carbon networks increased by ion bombardment enhanced with increasing DC bias voltage. Consequently, the increase of sp(2) clusters containing WC nanocrystalline in the carbon films is attributed to the improvement in the physical and electrical properties.

Transparent conducting thin films by co-sputtering of ZnO-ITO targets

Energy Technology Data Exchange (ETDEWEB)

Carreras, Paz; Antony, Aldrin; Roldan, Ruben; Nos, Oriol; Frigeri, Paolo Antonio; Asensi, Jose Miguel; Bertomeu, Joan [Grup d' Energia Solar, Universitat de Barcelona (Spain)

2010-04-15

Transparent and conductive Zn-In-Sn-O (ZITO) amorphous thin films have been deposited at room temperature by the rf magnetron co-sputtering of ITO and ZnO targets. Co-sputtering gives the possibility to deposit multicomponent oxide thin films with different compositions by varying the power to one of the targets. In order to make ZITO films with different Zn content, a constant rf power of 50 W was used for the ITO target, where as the rf power to ZnO target was varied from 25 W to 150 W. The as deposited films showed an increase in Zn content ratio from 17 to 67% as the power to ZnO target was increased from 25 to 150 W. The structural, electrical and optical properties of the as deposited films are reported. The films showed an average transmittance over 80% in the visible wavelength range. The electrical resistivity and optical band gap of the ZITO films were found to depend on the Zn content in the film. The ZITO films deposited at room temperature with lower Zn content ratios showed better optical transmission and electrical properties compared to ITO film. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Hydrogen absorption in epitaxial W/Nb(001) and polycrystalline Fe/Nb(110) multilayers studied in-situ by X-ray/neutron scattering techniques and X-ray absorption spectroscopy

International Nuclear Information System (INIS)

Klose, F.; Rehm, C.; Fieber-Erdmann, M.; Holub-Krappe, E.; Bleif, H. J.; Sowers, H.; Goyette, R.; Troger, L.; Maletta, H.

1999-01-01

Hydrogen can be absorbed in large quantities by 100 A thin Nb layers embedded in epitaxial W/Nb and polycrystalline Fe/Nb multilayers. The solubility and the hydrogen-induced structural changes of the host lattice are explored in-situ by small-angle neutron/X-ray reflectometry and high-angle diffraction. These measurements reveal for both systems that the relative out-of-plane expansion of the Nb layers is considerably larger than the relative increase of the Nb interplanar spacing indicating two distinctly different mechanisms of hydrogen absorption. In Fe/Nb multilayers, hydrogen expands the Nb interplanar spacing in a continuous way as function of the external pressure. In contrast, the Nb lattice expansion is discontinuous in epitaxial W/Nb multilayers: A jump in the Nb(002) Bragg reflection position occurs at a critical hydrogen pressure of 1 mbar. In-situ EXAFS spectroscopy also exhibits an irreversible expansion of the Nb lattice in the film plane for p H2 > 1 mbar. This can be regarded as a structural phase transition from an exclusively out-of-plane to a three-dimensionally expanded state at low and high hydrogen pressures, respectively

Electronic structure of thin films by the self-consistent numerical-basis-set linear combination of atomic orbitals method: Ni(001)

International Nuclear Information System (INIS)

Wang, C.S.; Freeman, A.J.

1979-01-01

We present the self-consistent numerical-basis-set linear combination of atomic orbitals (LCAO) discrete variational method for treating the electronic structure of thin films. As in the case of bulk solids, this method provides for thin films accurate solutions of the one-particle local density equations with a non-muffin-tin potential. Hamiltonian and overlap matrix elements are evaluated accurately by means of a three-dimensional numerical Diophantine integration scheme. Application of this method is made to the self-consistent solution of one-, three-, and five-layer Ni(001) unsupported films. The LCAO Bloch basis set consists of valence orbitals (3d, 4s, and 4p states for transition metals) orthogonalized to the frozen-core wave functions. The self-consistent potential is obtained iteratively within the superposition of overlapping spherical atomic charge density model with the atomic configurations treated as adjustable parameters. Thus the crystal Coulomb potential is constructed as a superposition of overlapping spherically symmetric atomic potentials and, correspondingly, the local density Kohn-Sham (α = 2/3) potential is determined from a superposition of atomic charge densities. At each iteration in the self-consistency procedure, the crystal charge density is evaluated using a sampling of 15 independent k points in (1/8)th of the irreducible two-dimensional Brillouin zone. The total density of states (DOS) and projected local DOS (by layer plane) are calculated using an analytic linear energy triangle method (presented as an Appendix) generalized from the tetrahedron scheme for bulk systems. Distinct differences are obtained between the surface and central plane local DOS. The central plane DOS is found to converge rapidly to the DOS of bulk paramagnetic Ni obtained by Wang and Callaway. Only a very small surplus charge (0.03 electron/atom) is found on the surface planes, in agreement with jellium model calculations

Biosynthesis and Characterization of Nanocellulose-Gelatin Films

Directory of Open Access Journals (Sweden)

Muenduen Phisalaphong

2013-02-01

Full Text Available A nanocellulose-gelatin (bacterial cellulose gelatin (BCG film was developed by a supplement of gelatin, at a concentration of 1%–10% w/v, in a coconut-water medium under the static cultivation of Acetobacter xylinum. The two polymers exhibited a certain degree of miscibility. The BCG film displayed dense and uniform homogeneous structures. The Fourier transform infrared spectroscopy (FTIR results demonstrated interactions between the cellulose and gelatin. Incorporation of gelatin into a cellulose nanofiber network resulted in significantly improved optical transparency and water absorption capacity of the films. A significant drop in the mechanical strengths and a decrease in the porosity of the film were observed when the supplement of gelatin was more than 3% (w/v. The BCG films showed no cytotoxicity against Vero cells.

Thermal stability of tungsten sub-nitride thin film prepared by reactive magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Zhang, X.X. [School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou, 730050 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730050 (China); Wu, Y.Z., E-mail: youzhiwu@163.com [School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou, 730050 (China); Mu, B. [College of Petrochemical Technology, Lanzhou University of Technology, Lanzhou, 730050 (China); Qiao, L. [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730050 (China); Li, W.X.; Li, J.J. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wang, P., E-mail: pengwang@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730050 (China)

2017-03-15

Tungsten sub-nitride thin films deposited on silicon samples by reactive magnetron sputtering were used as a model system to study the phase stability and microstructural evolution during thermal treatments. XRD, SEM&FIB, XPS, RBS and TDS were applied to investigate the stability of tungsten nitride films after heating up to 1473 K in vacuum. At the given experimental parameters a 920 nm thick crystalline film with a tungsten and nitrogen stoichiometry of 2:1 were achieved. The results showed that no phase and microstructure change occurred due to W{sub 2}N film annealing in vacuum up to 973 K. Heating up to 1073 K led to a partial decomposition of the W{sub 2}N phase and the formation of a W enrichment layer at the surface. Increasing the annealing time at the same temperature, the further decomposition of the W{sub 2}N phase was negligible. The complete decomposition of W{sub 2}N film happened as the temperature reached up to 1473 K.

An integrated buccal delivery system combining chitosan films impregnated with peptide loaded PEG-b-PLA nanoparticles.

Science.gov (United States)

Giovino, Concetta; Ayensu, Isaac; Tetteh, John; Boateng, Joshua S

2013-12-01

Peptide (insulin) loaded nanoparticles (NPs) have been embedded into buccal chitosan films (Ch-films-NPs). These films were produced by solvent casting and involved incorporating in chitosan gel (1.25% w/v), NPs-Insulin suspensions at three different concentrations (1, 3, and 5mg of NPs per film) using glycerol as plasticiser. Film swelling and mucoadhesion were investigated using 0.01M PBS at 37°C and texture analyzer, respectively. Formulations containing 3mg of NPs per film produced optimised films with excellent mucoadhesion and swelling properties. Dynamic laser scattering measurements showed that the erosion of the chitosan backbone controlled the release of NPs from the films, preceding in vitro drug (insulin) release from Ch-films-NPs after 6h. Modulated release was observed with 70% of encapsulated insulin released after 360h. The use of chitosan films yielded a 1.8-fold enhancement of ex vivo insulin permeation via EpiOral™ buccal tissue construct relative to the pure drug. Flux and apparent permeation coefficient of 0.1μg/cm(2)/h and 4×10(-2)cm(2)/h were respectively obtained for insulin released from Ch-films-NPs-3. Circular dichroism and FTIR spectroscopy demonstrated that the conformational structure of the model peptide drug (insulin) released from Ch-films-NPs was preserved during the formulation process. Copyright © 2013 Elsevier B.V. All rights reserved.

Effect of W addition on the electroless deposited NiP(W) barrier layer

International Nuclear Information System (INIS)

Tao, Yishi; Hu, Anmin; Hang, Tao; Peng, Li; Li, Ming

2013-01-01

Electroless deposition of NiP, NiWP thin film on p-type Si as the barrier layer to prevent the diffusion of Cu into Si was investigated. The thermal stability of the Si/Ni(W)P/Cu layers were evaluated by measuring the changes of resistance of the samples after annealed at various temperatures. XRD was applied to detect the formation of Cu 3 Si and evaluate the barrier performance of the layers. The results of XRD of the stacked Si/NiP/Cu, Si/NiWP-1/Cu, Si/NiWP–2/Cu films reveal that Cu atom could diffuse through NiP barrier layer at 450 °C, Cu could hardly diffuse through NiWP layer at 550 °C. This means that with W added in the layer, the barrier performance is improved. Although the resistance of Si/NiWP-1 and Si/NiWP-2 are higher than that of Si/NiP, the resistance of stacked layers of Si/NiWP-1/Cu and Si/NiWP–2/Cu are close to that of Si/NiP/Cu. This means that using NiWP as barrier layer is acceptable.

Antioxidative activity, moisture retention, film formation, and viscosity stability of Auricularia fuscosuccinea, white strain water extract.

Science.gov (United States)

Liao, Wayne C; Hsueh, Chiu-Yen; Chan, Chin-Feng

2014-01-01

This study showed that both water extracts (WAF-W) and ethanol extracts (EAF-W) of Auricularia fuscosuccinea (Montagne) Farlow, white strain (AF-W) demonstrated significantly stronger antioxidative effects than did commercially available Tremella fuciformis sporocarp extracts (WSK; with the exception of EAF-W in terms of superoxide radical scavenging activity levels). The moisture retention capacity of WAF-W is as potent as that of sodium hyaluronate (SHA), but less than that of WSK. No corrugation or fissures were observed in WAF-W film; only the SHA and WSK films demonstrated such effects in low-moisture conditions. The WAF-W solution also exhibited stable viscosity at high temperatures, indicating that the WAF-W film was more stable compared with the SHA and WSK films. WAF-W induced no adverse effects when a hen's egg test was performed on the chorioallantoic membrane (CAM). This study demonstrated that WAF-W exhibits excellent potential as a topical material for skin moisturizing and anti-aging effects.

GaMnAs on patterned GaAs(001) substrates: Growth and magnetotransport

Energy Technology Data Exchange (ETDEWEB)

Daeubler, Joachim; Glunk, Michael; Hummel, Thomas; Schoch, Wladimir; Limmer, Wolfgang; Sauer, Rolf [Institut fuer Halbleiterphysik, Universitaet Ulm, 89069 Ulm (Germany)

2007-07-01

A new type of GaMnAs microstructures with laterally confined electronic and magnetic properties has been realized in a bottom-up procedure by growing GaMnAs films on [1 anti 10]-oriented ridge structures with (113)A sidewalls and (001) top layers prepared on GaAs(001) substrates. Previous studies on planar GaMnAs samples have revealed different incorporation of Mn and excess As in (001) and (113)A layers. Accordingly, temperature- and field-dependent magnetotransport measurements on the overgrown ridge structures clearly demonstrate the coexistence of electronic and magnetic properties specific for (001) and (113)A GaMnAs in one single sample. This introduces an additional degree of freedom in the development of new functional structures.

Study of electronic excitation and diffraction effects as well as growth, structure, and magnetic properties of ultrathin 3d metal films on Cu(001) by means of grazing-incidence ion scattering; Untersuchung elektronischer Anregungs- und Beugungseffekte sowie Wachstum, Struktur und magnetischer Eigenschaften ultraduenner 3d-Metallfilme auf Cu(001) mittels streifender Ionenstreuung

Energy Technology Data Exchange (ETDEWEB)

Bernhard, T.

2006-11-23

H{sup +} and He{sup +} ions with an energy of 25 keV are scattered under a grazing angle of incidence from a clean and flat Cu(001) surface. For specific azimuthal orientations of the crystal surface with respect to low index directions in the surface plane we observe the ion induced emission of electrons with a conventional LEED (low energy electron diffraction) setup. By operating the instrument in an energy dispersive mode we find intensity distributions of emitted electrons which can unequivocally be ascribed to diffraction effects at the target surface. From this ion induced LEED-reflexes (IILEED) we get important information about the electron excitation- and emission effects during the scattering process. In the second part of this work we investigate the correlation between thin-film growth (Co,Fe,Mn on Cu(001)) and electron emission in the regime of grazing ion scattering. The ''rough'' surface of uncompleted layers increase the probability of binary collisions of incident ions with individual atoms at the surface. The energy spectras and the number distribution of emitted electrons are substantially influenced by these ''violent'' collisions and allow us to monitor growth of thin films via simple measurements of target current or from energy spectra of emitted electrons. The method provides excellent signals and is also applicable in the regime of poor layer growth. By making use of ion beam triangulation (IBT), direct information on the atomic structure of thin films and substrate surfaces is obtained. We discuss in the third part of this work a new variant of this method based on the detection of the number of emitted electrons. The data are analyzed via computer simulations using classical mechanics which provides a quantitative analysis with respect to projectile trajectories. This new detection scheme allows the determination of the in-plane structure of reconstructed thin films and surfaces with high precision

Zastosowanie pola magnetycznego oraz promieniowania optycznego w leczeniu zespołów bólowych kręgosłupa, w szczególności rwy kulszowej

Directory of Open Access Journals (Sweden)

Jarosław Pasek

2012-04-01

Full Text Available Wstęp: Rwa kulszowa, ischialgia (łac. ischias to zespół objawów związanych z uciskiem na przebiegu nerwów rdzeniowych L4, L5 lub S1 tworzących nerw kulszowy. Wiedza na temat leczenia zmienia się radykalnie i coraz częściej w leczeniu stosuje się wybrane metody fizykoterapeutyczne. W ostatnich latach ukazuje się coraz więcej publikacji dotyczących praktycznego wykorzystania w medycynie pól magnetycznych niskiej częstotliwości. Duża różnorodność wskazań oraz zastosowań w praktyce przynosi szerokie spektrum możliwości leczniczych. Materiał i metoda: Badaniami objęto grupę 47 pacjentów z rozpoznaniem rwy kulszowej spowodowanej zmianami zwyrodnieniowymi krążka międzykręgowego. Pacjentów podzielono na 3 grupy badawcze i poddano odpowiednio zabiegom magnetoterapii, magnetostymulacji i magnetoledoterapii w celu porównania przeprowadzonej terapii. Dokonano subiektywnej oceny odczuwanych dolegliwości bólowych w skali VAS. Dodatkowo posłużono się ankietą, w której oceniono częstość zażywania leków przeciwbólowych. Do oceny jakości życia wykorzystano skalę EuroQol. U każdego pacjenta podczas badania fizykalnego wykonano test Lasègue’a. Wyniki: Wykazano statystyczne zmniejszenie nasilenia odczuwanych dolegliwości bólowych w skali VAS badanych pacjentów (p<0,01, znaczną redukcję zażywanych leków przeciwbólowych oraz poprawę jako- ści życia ocenianej w skali EuroQol (p<0,01 po zastosowaniu zabiegów pola magnetycznego niskiej częstotliwości. Wnioski: Terapia polem magnetycznym bez względu na zastosowaną metodę zmniejsza odczuwane dolegliwości bólowe, co wpływa na poprawę jakości życia leczonych chorych. Zastosowana terapia przyczynia się również do ograniczenia przyjmowania leków przeciwbólowych. W badaniu nie stwierdzono znaczącej przewagi którejś z analizowanych metod w odniesieniu do otrzymanych wyników leczenia.

Experimental study of structural and optical properties of integrated MOCVD GaAs/Si(001) heterostructures

Science.gov (United States)

Seredin, P. V.; Lenshin, A. S.; Zolotukhin, D. S.; Arsentyev, I. N.; Nikolaev, D. N.; Zhabotinskiy, A. V.

2018-02-01

This is the first report of the control of the structural and optical functional characteristics of integrated GaAs/Si(001) heterostructures due to the use of misoriented Si(001) substrates with protoporous sublayer. The growth of the epitaxial GaAs layer on silicon substrates without formation of the antiphase domains can be performed on substrates deviating less than 4°-6° from the singular (001) plane or without the use of a transition layer of GaAs nano-columns. Preliminary etching of the silicon substrate with protoporous Si sublayer formation facilitated the acquisition of an epitaxial GaAs film in a single-crystalline state with a considerably less residual strain factor using MOCVD, which has a positive effect on the structural quality of the film. These data are in a good agreement with the results of IR reflection spectroscopy as well as PL and UV spectroscopy. The optical properties of the integrated GaAs/Si (001) heterostructures in the IR and UV spectral regions were also determined by the residual strain value.

Formation of intra-island grain boundaries in pentacene monolayers.

Science.gov (United States)

Zhang, Jian; Wu, Yu; Duhm, Steffen; Rabe, Jürgen P; Rudolf, Petra; Koch, Norbert

2011-12-21

To assess the formation of intra-island grain boundaries during the early stages of pentacene film growth, we studied sub-monolayers of pentacene on pristine silicon oxide and silicon oxide with high pinning centre density (induced by UV/O(3) treatment). We investigated the influence of the kinetic energy of the impinging molecules on the sub-monolayer growth by comparing organic molecular beam deposition (OMBD) and supersonic molecular beam deposition (SuMBD). For pentacene films fabricated by OMBD, higher pentacene island-density and higher polycrystalline island density were observed on UV/O(3)-treated silicon oxide as compared to pristine silicon oxide. Pentacene films deposited by SuMBD exhibited about one order of magnitude lower island- and polycrystalline island densities compared to OMBD, on both types of substrates. Our results suggest that polycrystalline growth of single islands on amorphous silicon oxide is facilitated by structural/chemical surface pinning centres, which act as nucleation centres for multiple grain formation in a single island. Furthermore, the overall lower intra-island grain boundary density in pentacene films fabricated by SuMBD reduces the number of charge carrier trapping sites specific to grain boundaries and should thus help achieving higher charge carrier mobilities, which are advantageous for their use in organic thin-film transistors.

Electrochromic properties of bipolar pulsed magnetron sputter deposited tungsten–molybdenum oxide films

Energy Technology Data Exchange (ETDEWEB)

Lin, Tai-Nan [Chemical Engineering Division, Institute of Nuclear Energy Research, Taoyuan 325, Taiwan, ROC (China); Lin, Yi Han; Lee, Chin Tan [Department of Electronic Engineering, National Quemoy University, Kinmen 892, Taiwan, ROC (China); Han, Sheng [Center of General Education, National Taichung Institute of Technology, Taichung 404, Taiwan, ROC (China); Weng, Ko-Wei, E-mail: kowei@nqu.edu.tw [Department of Electronic Engineering, National Quemoy University, Kinmen 892, Taiwan, ROC (China)

2015-06-01

There are great interests in electrochromic technology for smart windows and displays over past decades. In this study, the WMoO{sub x} thin films were deposited onto indium tin oxide glass and silicon substrates by pulsed magnetron sputter system with W and Mo targets. The films were deposited with fixed W target power while the variant parameter of Mo target power in the range 50, 100, 150 and 200 W was investigated. The working pressure was fixed at 1.33 Pa with a gas mixture of Ar (30 sccm) and O{sub 2} (15 sccm). The film thickness increased with the Mo target power. Higher plasma power resulted in a crystalline structure which would reduce the electrochromic property of the film. The influence of plasma powers applied to Mo target on the structural, optical and electrochromic properties of the WMoO{sub x} thin films has been investigated. WMoO{sub x} films grown at Mo target powers less than 100 W were found to be amorphous. The films deposited at 150 W, which is the optimal fabrication condition, exhibit better electrochromic properties with high optical modulation, high coloration efficiency and less color memory effect at wavelength 400, 550 and 800 nm. The improvement resulted from the effect of doping Mo has been tested. The maximum ΔT (%) values are 36.6% at 400 nm, 65.6% at 550 nm, and 66.6% at 800 nm for pure WO{sub 3} film. The addition of Mo content in the WMoO{sub x} films provides better resistance to the short wavelength light source and can be used in the concerned application. - Highlights: • WMoO{sub x} films are deposited by pulsed magnetron sputter with pure W and Mo targets. • Mo addition in WMoO{sub x} provides better resistance to short wavelength light source. • WMoO{sub x} films exhibit electrochemical stability in the cycling test.

20 Gbit/s error free transmission with ~850 nm GaAs-based vertical cavity surface emitting lasers (VCSELs) containing InAs-GaAs submonolayer quantum dot insertions

Science.gov (United States)

Lott, J. A.; Shchukin, V. A.; Ledentsov, N. N.; Stinz, A.; Hopfer, F.; Mutig, A.; Fiol, G.; Bimberg, D.; Blokhin, S. A.; Karachinsky, L. Y.; Novikov, I. I.; Maximov, M. V.; Zakharov, N. D.; Werner, P.

2009-02-01

We report on the modeling, epitaxial growth, fabrication, and characterization of 830-845 nm vertical cavity surface emitting lasers (VCSELs) that employ InAs-GaAs quantum dot (QD) gain elements. The GaAs-based VCSELs are essentially conventional in design, grown by solid-source molecular beam epitaxy, and include top and bottom gradedheterointerface AlGaAs distributed Bragg reflectors, a single selectively-oxidized AlAs waveguiding/current funneling aperture layer, and a quasi-antiwaveguiding microcavity. The active region consists of three sheets of InAs-GaAs submonolayer insertions separated by AlGaAs matrix layers. Compared to QWs the InAs-GaAs insertions are expected to offer higher exciton-dominated modal gain and improved carrier capture and retention, thus resulting in superior temperature stability and resilience to degradation caused by operating at the larger switching currents commonly employed to increase the data rates of modern optical communication systems. We investigate the robustness and temperature performance of our QD VCSEL design by fabricating prototype devices in a high-frequency ground-sourceground contact pad configuration suitable for on-wafer probing. Arrays of VCSELs are produced with precise variations in top mesa diameter from 24 to 36 μm and oxide aperture diameter from 1 to 12 μm resulting in VCSELs that operate in full single-mode, single-mode to multi-mode, and full multi-mode regimes. The single-mode QD VCSELs have room temperature threshold currents below 0.5 mA and peak output powers near 1 mW, whereas the corresponding values for full multi-mode devices range from about 0.5 to 1.5 mA and 2.5 to 5 mW. At 20°C we observe optical transmission at 20 Gb/s through 150 m of OM3 fiber with a bit error ratio better than 10-12, thus demonstrating the great potential of our QD VCSELs for applications in next-generation short-distance optical data communications and interconnect systems.

Mango kernel starch-gum composite films: Physical, mechanical and barrier properties.

Science.gov (United States)

Nawab, Anjum; Alam, Feroz; Haq, Muhammad Abdul; Lutfi, Zubala; Hasnain, Abid

2017-05-01

Composite films were developed by the casting method using mango kernel starch (MKS) and guar and xanthan gums. The concentration of both gums ranged from 0% to 30% (w/w of starch; db). Mechanical properties, oxygen permeability (OP), water vapor permeability (WVP), solubility in water and color parameters of composite films were evaluated. The crystallinity and homogeneity between the starch and gums were also evaluated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The scanning electron micrographs showed homogeneous matrix, with no signs of phase separation between the components. XRD analysis demonstrated diminished crystalline peak. Regardless of gum type the tensile strength (TS) of composite films increased with increasing gum concentration while reverse trend was noted for elongation at break (EAB) which found to be decreased with increasing gum concentration. The addition of both guar and xanthan gums increased solubility and WVP of the composite films. However, the OP was found to be lower than that of the control with both gums. Furthermore, addition of both gums led to changes in transparency and opacity of MKS films. Films containing 10% (w/w) xanthan gum showed lower values for solubility, WVP and OP, while film containing 20% guar gum showed good mechanical properties. Copyright © 2017 Elsevier B.V. All rights reserved.

The effect of radiosterilization on surface properties of polyurethane film

International Nuclear Information System (INIS)

Sheikh, N.

2003-01-01

In this paper the effect of sterilization method by gamma-ray on structure and cytotoxicity of polyurethane film surface has been investigated. For this purpose reactive urethan prepolymer was synthesized by the reaction between Tdi with a mixture of Peg and castro oil (50/50, w/w). The cured prepolymer films were prepared due to the reaction of reactive prepolymer with air moister under ambient conditions. The polyurethane films were sterilized by gamma-ray (25 kGy). The surface of sterilized polyurethane film was observed by Sem and compared to that of the unsterilized film. Also, the in vitro interaction of fibroblast L 929 cells and sterilized polyurethane film was evaluated. Results showed no signs of cell toxicity

Structural, morphological and magnetic characterization of electrodeposited Co–Fe–W alloys

Energy Technology Data Exchange (ETDEWEB)

Noce, R. Della, E-mail: rodrnoce@iq.unesp.br [Instituto de Química, Universidade Estadual Paulista, UNESP, 14800-900 Araraquara, SP (Brazil); Benedetti, A.V.; Magnani, M. [Instituto de Química, Universidade Estadual Paulista, UNESP, 14800-900 Araraquara, SP (Brazil); Passamani, E.C. [Departamento de Física, Universidade Federal do Espírito Santo, 29075-910 Vitória, ES (Brazil); Kumar, H.; Cornejo, D.R. [Instituto de Física, Universidade de São Paulo, USP, 05508-090 São Paulo, SP (Brazil); Ospina, C.A. [Electron Microscopy Laboratory, Brazilian Nanotechnology National Laboratory, 13083-970 Campinas, SP (Brazil)

2014-10-25

Highlights: • Small W additions (up to 9 at.%) to the Co{sub 35}Fe{sub 65} binary system. • Electrodeposited Co–Fe–W alloys characterization by XRD, SEM, TEM, Mössbauer spectroscopy and magnetic measurements. • Production of Co–Fe–W alloys with low values of coercivity and high saturation magnetization. • Potential materials for applications in magnetic devices such as read/write heads and hard disks. - Abstract: Structural, morphological and magnetic characterization of electrodeposited Co–Fe–W alloys, containing small amounts of W (up to 9 at.%), were performed using X-ray diffractometry, scanning (SEM) and transmission (TEM) electron microscopy, Mössbauer spectroscopy and magnetization measurements. Electrodeposited (Co{sub 100−x}Fe{sub x}){sub 100−y}W{sub y} films (x = 63–72 at.% Fe, y = 4–9 at.% W) were successfully produced varying the applied cathodic current density (i{sub c}) between 0.5 and 10 mA cm{sup −2}. X-ray diffraction results revealed a bcc-like structure for all studied compositions with average crystallite size ranging from 16 to 35 nm, as also confirmed by TEM results. SEM images indicated that needle-type morphology is dominant for the deposits containing lower W content (up to 4.5 at.%.), while a cauliflower-type behavior is observed for higher W content deposits. Room temperature Mössbauer spectra indicate the presence of two magnetic species for all samples; one component associated with an ordered Co–Fe–W fraction (crystalline grain core) and a magnetic disordered Co–Fe–W contribution, which can be attributed to the grain boundaries/grain surfaces. Magnetization was observed to be in the film plane along the film direction, except the sample prepared at i{sub c} = 10 mA cm{sup −2} that is slightly canted from in- to out-of-plane geometry. Magnetic measurements show high saturation magnetization values accompanied by low coercivity ones for the electrodeposited Co–Fe–W alloys, making these

Effects of a Carbohydrase Mixture, Ultrasound, and Irradiation Treatments on the Physical Properties of Defatted Mustard Meal-based Edible Films

International Nuclear Information System (INIS)

Yang, H.J.; Noh, B.S.; Min, S.C.; Kim, J.H.

2011-01-01

Effects of depolymerization treatments of a carbohydrase mixture (CM), ultrasound, and irradiation on the physical properties of defatted mustard meal-based edible films (DMM films) were investigated. DMM hydrocolloids were added to CM (0.42% (w/w solution)), treated by ultrasound (500-700 W, 10-30 min) or γ-ray (40-100 kGy) to prepare film-forming solutions. Films were formed by drying. The CM treatment at 0.42% (w/w), pH 5.5, and 40-50℃ with a 0.5 hr incubation time resulted in the highest colloidal stability in the film-forming solution. The depolymerization treatments did not dramatically change the water vapor permeability of the films. The solubility of the film decreased up to 53.1% by the CM treatment. The ultrasound treatment (700 W-30 min) decreased tensile strength and elongation. The ultrasound treatment (600 W-20 min) resulted in more compact and uniform structures of the films. Flavor profiles were differentiated by the power level and the time of the ultrasound treatment

Characteristics of Bilayer Molybdenum Films Deposited Using RF Sputtering for Back Contact of Thin Film Solar Cells

Directory of Open Access Journals (Sweden)

Sea-Fue Wang

2014-01-01

Full Text Available Mo films prepared under a single deposition condition seldom simultaneously obtain a low resistivity and a good adhesion necessary for use in solar cells. In order to surmount the obstacle, bilayer Mo films using DC sputtering at a higher working pressure and a lower working pressure have been attempted as reported in the literature. In this study, RF sputtering with different powers in conjunction with different working pressures was explored to prepare bilayer Mo film. The first bottom layer was grown at a RF sputtering power of 30 W and a working pressure of 12 mTorr, and the second top layer was deposited at 100 W and 4.5 mTorr. The films revealed a columnar growth with a preferred orientation along the (110 plane. The bilayer Mo films reported an electrical resistivity of 6.35 × 10−5 Ω-cm and passed the Scotch tape test for adhesion to the soda-lime glass substrate, thereby qualifying the bilayer Mo films for use as back metal contacts for CIGS substrates.

Growth and characterization of textured YBaCo{sub 2}O{sub 5+δ} thin films grown on (001)-SrTiO{sub 3} via DC magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Galeano, V. [Universidad Nacional de Colombia, Campus Medellín, Facultad de Ciencias, Departamento de Física, Laboratorio de Cerámicos y Vítreos, A.A. 568, Medellín (Colombia); Arnache, O. [Grupo de Estado Sólido, Departamento de Física, Universidad de Antioquia, A.A. 1226, Medellín (Colombia); Supelano, I.; Vargas, C.A. Parra [Universidad Pedagógica y Tecnológica de Colombia, Departamento de Física, Avenida Central del Norte 39-115, Tunja (Colombia); Morán, O., E-mail: omoranc@unal.edu.co [Universidad Nacional de Colombia, Campus Medellín, Facultad de Ciencias, Departamento de Física, Laboratorio de Cerámicos y Vítreos, A.A. 568, Medellín (Colombia)

2016-06-30

Thin films of the layered cobaltite YBaCo{sub 2}O{sub 5+δ} were successfully grown on (001)-oriented SrTiO{sub 3} single-crystal substrates by means of DC magnetron sputtering. The 112 phase of the compound was stabilized by choosing an adequate Co reactant and through careful thermal treatment of the target. The results demonstrate the strong influence of these variables on the final phase of the compound. A substrate temperature of 1053 K and an oxygen pressure of 300 Pa seemed to be appropriate growing conditions for depositing (00ℓ)-textured YBaCo{sub 2}O{sub 5+δ} thin films onto the chosen substrate. In like fashion to the polycrystalline YBaCo{sub 2}O{sub 5+δ}, the films showed a clear sequence of antiferromagnetic–ferromagnetic–paramagnetic transitions within a narrow temperature range. Well-defined hysteresis loops were observed at temperatures as high as 270 K, which supports the existence of a FM order in the films. In turn, the dependence of the resistivity on the temperature shows a semiconductor-like behavior, without any distinguishable structure, within the temperature range measured (50–350 K). The analysis of the experimental data showed that the transport mechanism in the films is well described by using the Mott variable range hopping (VRH) conduction model. - Highlights: • YBaCo{sub 2}O{sub 5+δ} thin films are grown on SrTiO{sub 3} substrates. • Strong (00ℓ) reflections are observed in the X-ray diffraction pattern. • A clear sequence of magnetic transitions is observed. • Semiconducting-like behavior is verified.

Quasiparticle Diffusion in Al Films Coupled to Tungsten Transition Edge Sensors

Science.gov (United States)

Yen, J. J.; Young, B. A.; Cabrera, B.; Brink, P. L.; Cherry, M.; Moffatt, R.; Pyle, M.; Redl, P.; Tomada, A.; Tortorici, E. C.

2014-08-01

We report recent results obtained from several W/Al test devices on Si wafers fabricated specifically to better understand energy collection in phonon sensors used for the Cryogenic Dark Matter Search (CDMS) experiment. The devices under study consist of three different lengths of 250 m-wide by 300 nm-thick Al absorber films, coupled to 250 m x 250 m (40 nm thick) W-TESs at each end of the Al film. An Fe source was used to excite a NaCl reflector producing 2.6 keV Cl X-rays that were absorbed in our test device after passing through a collimator. The impinging X-rays broke Cooper pairs in the Al film, producing quasiparticles that we detected after they propagated into the W-TESs. We studied the diffusion of these quasiparticles in the Al, trapping effects in the Al film, and energy transmission at the Al/W interfaces.

Electronic structure of semiconductor quantum films

International Nuclear Information System (INIS)

Zhang, S.B.; Yeh, C.; Zunger, A.

1993-01-01

The electronic structure of thin (≤30 A) free-standing ideal films of Si(001), Si(110), and GaAs(110) is calculated using a plane-wave pseudopotential description. Unlike the expectation based on the simple effective-mass model, we find the following. (i) The band gaps of (001) quantum films exhibit even-odd oscillation as a function of the number N of monolayers. (ii) In addition to sine-type envelope functions which vanish at the film boundaries, some states have cosine envelope functions with extrema at boundaries. (iii) Even-layer Si(001) films exhibit at the valence-band maximum a state whose energy does not vary with the film thickness. Such zero confinement states have constant envelope throughout the film. (iv) Optical transitions in films exhibit boundary-imposed selection rules. Furthermore, oscillator strengths for pseudodirect transitions in the vicinity of forbidden direct transitions can be enhanced by several orders of magnitude. These findings, obtained in direct supercell calculations, can be explained in terms of a truncated crystal (TC) analysis. In this approach the film's wave functions are expanded in terms of pairs of bulk wave functions exhibiting a destructive interference at the boundaries. This maps the eigenvalue spectra of a film onto the bulk band structure evaluated at special k points which satisfy the boundary conditions. We find that the TC representation reproduces accurately the above-mentioned results of direct diagonalization of the film's Hamiltonian. This provides a simple alternative to the effective-mass model and relates the properties of quantum structures to those of the bulk material

Modifying the properties of whey protein isolate edible film by incorporating palm oil and glycerol

Directory of Open Access Journals (Sweden)

Vachiraya Liaotrakoon

2018-02-01

Full Text Available This study aimed to improve the properties of whey protein isolate (WPI films by incorporating palm oil (6, 7, and 8% w/w and glycerol (40, 50 and 60% w/w. The lightness of the films increased as glycerol levels increased, but the redness increased with the increased amount of oil content. Increasing the amounts of palm oil and glycerol improved flexibility (P<0.05, but reduced the strength of the film (P<0.05. Films with higher levels of palm oil and lower amounts of glycerol were less permeable to water vapor and oxygen, but more thermally stable. The size of particles and air bubbles in the films reduced with increased palm oil content, regardless of glycerol level. Among all formulae, the film prepared with 8% palm oil and 40% glycerol showed the best overall results. Modifying WPI films with palm oil and glycerol offers a simple technique for producing packaging with better environmental barrier properties.

Growth and BZO-doping of the nanostructured YBCO thin films on buffered metal substrates

DEFF Research Database (Denmark)

Huhtinen, H.; Irjala, M.; Paturi, P.

2010-01-01

The growth of the nanostructured YBa2Cu3O6+x (YBCO) films is investigated for the first time on biaxially textured NiW substrates used in coated conductor technology. The optimization process of superconducting layers is made in wide magnetic field and temperature range in order to understand...... the vortex pinning structure and mechanism in our films prepared from nanostructured material. Structural analysis shows that growth mechanism in YBCO films grown on NiW is completely different when compared to YBCO on STO. Films on NiW are much rougher, there is huge in-plane variation of YBCO crystals...... and moreover out-of-plane long range lattice ordering is greatly reduced. Magnetic measurements demonstrate that jc in films grown on NiW is higher in high magnetic fields and low temperatures. This effect is connected to the amount of pinning centres observed in films on metal substrates which are effective...

Thermal conductivity of mesoporous films measured by Raman spectroscopy

Science.gov (United States)

Stoib, B.; Filser, S.; Petermann, N.; Wiggers, H.; Stutzmann, M.; Brandt, M. S.

2014-04-01

We measure the in-plane thermal conductance of mesoporous Ge and SiGe thin films using the Raman-shift method and, based on a finite differences simulation accounting for the geometry of the sample, extract the in-plane thermal conductivity. For a suspended thin film of laser-sintered SiGe nanoparticles doped with phosphorus, we find an effective in-plane thermal conductivity of 0.05 W/m K in vacuum for a temperature difference of 400 K and a mean temperature of 500 K. Under similar conditions, the effective in-plane thermal conductivity of a laser-sintered undoped Ge nanoparticle film is 0.5 W/m K. Accounting for a porosity of approximately 50%, the normalized thermal conductivities are 0.1 W/m K and 1 W/m K, respectively. The thermoelectric performance is discussed, considering that the electrical in-plane conductivity is also affected by the mesoporosity.

Chemically stabilized epitaxial wurtzite-BN thin film

Science.gov (United States)

Vishal, Badri; Singh, Rajendra; Chaturvedi, Abhishek; Sharma, Ankit; Sreedhara, M. B.; Sahu, Rajib; Bhat, Usha; Ramamurty, Upadrasta; Datta, Ranjan

2018-03-01

We report on the chemically stabilized epitaxial w-BN thin film grown on c-plane sapphire by pulsed laser deposition under slow kinetic condition. Traces of no other allotropes such as cubic (c) or hexagonal (h) BN phases are present. Sapphire substrate plays a significant role in stabilizing the metastable w-BN from h-BN target under unusual PLD growth condition involving low temperature and pressure and is explained based on density functional theory calculation. The hardness and the elastic modulus of the w-BN film are 37 & 339 GPa, respectively measured by indentation along direction. The results are extremely promising in advancing the microelectronic and mechanical tooling industry.

Mechanical and Barrier Properties of Semi Refined Kappa Carrageenan-based Composite Edible Film and Its Application on Minimally Processed Chicken Breast Fillet

Science.gov (United States)

Praseptiangga, D.; Maimuni, B. H.; Manuhara, G. J.; Muhammad, D. R. A.

2018-03-01

Kappa-carrageenan (KC) is one of the most interesting biopolymers that is composed of a linear chain of sulfated galactans and extracted from red seaweed, Kappaphycus alvarezii. It shows good potential for development as a source of biodegradable or edible films. However, KC films do not have good water vapor barrier properties, as they are intrinsically hydrophilic. Palmitic acid (PA) as hydrophobic material was incorporated into semi-refined kappa-carrageenan (SRKC) edible films in order to improve water vapor barrier properties. In this study, composite films based on SRKC incorporating PA were prepared and their applications on minimally processed chicken breast fillet were evaluated. Composite SRKC-based films with varying concentrations of PA (5%, 10%, and 15% w/w) were obtained by a solvent casting method. Their mechanical and barrier properties were investigated. Results showed that the incorporation of PA in films caused an increase in thickness, but decrease in water vapor transmission rate (WVTR) as the concentration of PA increased (from 5% to 15% w/w). Composite SRKC-based edible film incorporating 15% w/w of PA presented better water vapor barrier properties as compared to other films with 5% and 10% w/w PA incorporation. Thus, formulation containing 15% w/w PA was used as a wrapping material for film application on minimally processed chicken breast fillet. The application results showed that the incorporation of PA in film caused an effect (p 0.05) change the color of minimally processed chicken breast fillet.

Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate

International Nuclear Information System (INIS)

Soares, G. V.; Krug, C.; Miotti, L.; Bastos, K. P.; Lucovsky, G.; Baumvol, I. J. R.; Radtke, C.

2011-01-01

Thermally driven atomic transport in HfO 2 /GeO 2 /substrate structures on Ge(001) and Si(001) was investigated in N 2 ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO 2 /Ge interface. In addition, hafnium germanate is formed at 600 deg. C. Our data indicate that at 500 deg. C and above HfO 2 /GeO 2 stacks are stable only if isolated from the Ge substrate.

Onset of magnetic interface exchange interactions in epitaxially grown Mn-Co(001)

NARCIS (Netherlands)

Kohlhepp, J.T.; Wieldraaijer, H.; Jonge, de W.J.M.

2007-01-01

Manganese (Mn) grows in a metastable expanded (c/a > 1) face-centered-tetragonal (fct) phase on thin fct-Co(001) template films. A layer-by-layer growth mode is obsd. for small Mn thicknesses. Antiferromagnetism (AFM) of fct-Mn is evidenced by the observation of shifted magnetization loops

Silicate formation at the interface of Pr-oxide as a high-K dielectric and Si(001) surfaces

International Nuclear Information System (INIS)

Schmeisser, D.; Zheng, F.; Perez-Dieste, V.; Himpsel, F.J.; LoNigro, R.; Toro, R.G.; Malandrino, G.; Fragala, I.L.

2006-01-01

The composition and chemical bonding of the first atoms across the interface between Si(001) and the dielectric determine the quality of dielectric gate stacks. An analysis of that hidden interface is a challenge as it requires both, high sensitivity and elemental and chemical state information. We used X-ray absorption spectroscopy in total electron yield and total fluorescence yield at the Si2p and the O1s edges to address that issue. We report on results of Pr 2 O 3 /Si(001) as prepared by both, epitaxial growth and metal organic chemical vapor deposition (MOCVD), and compare to the SiO 2 /Si(001) system as a reference. We find evidence for the silicate formation at the interface as derived from the characteristic features at the Si2p and the O1s edges. The results are in line with model experiments in which films of increasing film thickness are deposited in situ on bare Si(001) surfaces

Characteristics of sputtered Al-doped ZnO films for transparent electrodes of organic thin-film transistor

International Nuclear Information System (INIS)

Park, Yong Seob; Kim, Han-Ki

2011-01-01

Aluminum-doped ZnO (AZO) thin-films were deposited with various RF powers at room temperature by radio frequency (RF) magnetron sputtering method. The electrical properties of the AZO film were improved with the increasing RF power. These results can be explained by the improvement of the crystallinity in the AZO film. We fabricated the organic thin-film transistor (OTFT) of the bottom gate structure using pentacene active and poly-4-vinyl phenol gate dielectric layers on the indium tin oxide gate electrode, and estimated the device properties of the OTFTs including drain current-drain voltage (I D -V D ), drain current-gate voltage (I D -V G ), threshold voltage (V T ), on/off ratio and field effect mobility. The AZO film that grown at 160 W RF power exhibited low resistivity (1.54 x 10 -3 Ω.cm), high crystallinity and uniform surface morphology. The pentacene thin-film transistor using the AZO film that's fabricated at 160 W RF power exhibited good device performance such as the mobility of 0.94 cm 2 /V s and the on/off ratio of ∼ 10 5 . Consequently, the performance of the OTFT such as larger field-effect carrier mobility was determined the conductivity of the AZO source/drain (S/D) electrode. AZO films prepared at room temperature by the sputtering method are suitable for the S/D electrodes in the OTFTs.

Physical and antibacterial properties of açaí edible films formulated with thyme essential oil and apple skin polyphenols.

Science.gov (United States)

Espitia, Paula J P; Avena-Bustillos, Roberto J; Du, Wen-Xian; Chiou, Bor-Sen; Williams, Tina G; Wood, Delilah; McHugh, Tara H; Soares, Nilda F F

2014-05-01

Thyme essential oil (TEO) and apple skin polyphenols (ASP) are natural compounds considered as generally recognized as safe by FDA, with biological effects against bacteria and fungi. This work aimed to evaluate physical and antimicrobial properties of açaí edible films formulated with TEO and ASP at 3% and 6% (w/w) individually or combined at 3% (w/w) each. Physical properties studied include mechanical resistance, water vapor permeability (WVP), color, and thermal resistance. Antimicrobial activity against Listeria monocytogenes was determined using the overlay diffusion test. Addition of ASP resulted in improved mechanical properties. TEO at 6% (w/w) resulted in increased elongation. ASP films had significant higher WVP than control film. ASP films were lighter and had more red color than other films. Incorporation of ASP resulted in improved film thermal stability, whereas TEO caused rapid thermal decomposition. Presence of clusters was observed on the surface of films. Addition of ASP resulted in a smoother surface, whereas addition of TEO led to the formation of crater-like pits on the film surface. Açaí edible film incorporated with 6% (w/w) TEO presented the highest antimicrobial activity. However, both antimicrobials are necessary in the açaí films in order to obtain edible films with suitable physical-mechanical properties. The results of the present study showed that TEO and ASP can be used to prepare açaí edible films with adequate physical-mechanical properties and antimicrobial activity for food applications by direct contact. Developed açaí edible films presented antimicrobial activity against L. monocytogenes and good physical-mechanical properties, showing the potential use of açaí edible films in food preservation. Published 2014. This article is a U.S. Government work and is in the public domain in the USA.

Preparation of Modified Films with Protein from Grouper Fish

Science.gov (United States)

Tecante, A.; Granados-Navarrete, S.; Martínez-García, C.

2016-01-01

A protein concentrate (PC) was obtained from Grouper fish skin and it was used to prepare films with different amounts of sorbitol and glycerol as plasticizers. The best performing films regarding resistance were then modified with various concentrations of CaCl2, CaSO4 (calcium salts), and glucono-δ-lactone (GDL) with the purpose of improving their mechanical and barrier properties. These films were characterized by determining their mechanical properties and permeability to water vapor and oxygen. Formulations with 5% (w/v) protein and 75% sorbitol and 4% (w/v) protein with a mixture of 15% glycerol and 15% sorbitol produced adequate films. Calcium salts and GDL increased the tensile fracture stress but reduced the fracture strain and decreased water vapor permeability compared with control films. The films prepared represent an attractive alternative for being used as food packaging materials. PMID:27597950

Voltammetry and In Situ Scanning Tunneling Microscopy of Cytochrome c Nitrite Reductase on Au(111)-Electrodes

DEFF Research Database (Denmark)

Gwyer, James; Zhang, Jingdong; Butt, Julea

2006-01-01

of the density and orientational distribution of NrfA molecules are disclosed. The submonolayer coverage resolved by in situ STM is readily reconciled with the failure to detect nonturnover signals in cyclic voltammetry of the NrfA films. The molecular structures show a range of lateral dimensions...... a direct approach to correlate electrocatalytic and molecular properties of the protein layer, a long-standing issue in protein film voltammetry....

Influence of carbon nanotube clustering on the electrical conductivity of polymer composite films

Directory of Open Access Journals (Sweden)

2010-05-01

Full Text Available Electrical conductivity of 150–200 µm thick polysulfone films loaded with 0.05–0.75% w/w multiwall carbon nanotubes was systematically investigated for two types of dispersion states, uniformly dispersed and agglomerated at the micro-scale. The percolation threshold was found at 0.11% and 0.068% w/w for the uniformly dispersed and agglomerated films, respectively. Overall, the conductivity of the films with agglomerated nanotubes was higher than that of the uniformly dispersed ones, with marked differences of 2 to 4 orders of magnitude for carbon nanotubes loadings in the upper vicinity of the percolation threshold (0.1–0.3% w/w. The increased conductivity of the agglomerated state is explained by the increased nanotube-to-nanotube contact after the percolating network has formed, which facilitates electron transfer.

Lepidium perfoliatum seed gum: a new source of carbohydrate to make a biodegradable film.

Science.gov (United States)

Seyedi, Samira; Koocheki, Arash; Mohebbi, Mohebbat; Zahedi, Younes

2014-01-30

Microstructural, physical, mechanical and thermal properties of a novel biodegradable film based on Lepidium perfoliatum seed gum (LPSG) were investigated. LPSG films were successfully prepared by incorporation of four levels of glycerol (40%, 50%, 60% and 70%, w/w). As expected, increasing glycerol concentration from 40 to 70% (w/w), increased water vapor permeability (WVP), elongation at break (EB%), moisture content, moisture adsorption and water solubility of LPSG films; whilst, elastic modulus (EM), contact angle, melting point (Tm), enthalpy of melting (ΔHm) and glass transition point (Tg) decreased significantly. LPSG films became slightly greenish and yellowish in color but still transparent in appearance. The images taken from electron scanning microscopy indicated uniform surface, compact sheets with no holes or fracture. This study demonstrates that LPSG based films with desired properties can be obtained by adjusting glycerol content. Copyright © 2013 Elsevier Ltd. All rights reserved.

Influence of palm oil and glycerol on properties of fish skin gelatin-based films.

Science.gov (United States)

Nilsuwan, Krisana; Benjakul, Soottawat; Prodpran, Thummanoon

2016-06-01

Properties of fish skin gelatin film incorporated with palm oil at 50 and 75 % (w/w) as affected by glycerol at 0-30 % (w/w) were investigated. Increases in water vapour permeability and elongation at break along with decrease in tensile strength were noticed when levels of glycerol were increased (p fish skin gelatin films without drastic alteration of mechanical properties.

A novel biological active multilayer film based on polyoxometalate with pendant support-ligand

International Nuclear Information System (INIS)

Ma Huiyuan; Peng Jun; Han Zhangang; Yu Xia; Dong Baoxia

2005-01-01

A novel nanosized biological active multilayer film composed of polyoxometalate (POM) anion α-[SiW 11 O 39 Co(H 2 PO 4 )] 7- (abbr. SiW 11 Co-PO 4 ) and poly(diallyldi methylammonium chloride) (abbr. PDDA) was fabricated by layer-by-layer self-assembly (LBL). The composition and growth processes of the films have been determined by X-ray photoelectron spectra (XPS) and ultraviolet-visible absorption spectra (UV). The composite film was formed by the alternate adsorption of SiW 11 Co-PO 4 and PDDA, and the deposition process was quantitative and highly reproducible from layer to layer. The morphology of the film was studied by atomic force microscopy (AFM), which showed that the film was relatively uniform and smooth, and POM anions aggregated into nanoclusters distributing on the surface uniformly. The film exhibited favorable electrochemical behavior of POM indicated by cyclic voltammetry (CV). The film can immobilize the DNA molecules via Mg 2+ -bridging medium

Self Passivating W-based Alloys as Plasma Facing Material

International Nuclear Information System (INIS)

Koch, F.; Koeppl, S.; Bolt, H.

2007-01-01

Full text of publication follows: Tungsten (W) is presently the main candidate material for the plasma-facing protection of future fusion power reactors due to the low sputter erosion under bombardment by energetic D, T and He ions. Thus a W-based protection material may provide a wall erosion lifetime of the order of five years which is a pre-requisite for economic fusion reactor operation. A potential problem with the use of pure W in a fusion reactor is the formation of radioactive and highly volatile WO 3 compounds and their potential release under accidental conditions. A loss-of-coolant event in a He-cooled reactor would lead to a temperature rise to 1100 deg. C after approx. 10 to 30 days due to the nuclear decay heat of the in-vessel components. In such a situation additional accidental intense air ingress into the reactor vessel would lead to the formation of WO 3 and subsequent evaporation of radioactive (WO 3 ) x -clusters. The use of self passivating W alloys either as bulk material or as thick coating on the steel wall may be a passively safe alternative for the plasma-facing protection. The use of this material would eliminate the above mentioned concern related to pure W. To enable the formation of a protective film in oxidizing atmosphere which seals the tungsten surface from further oxidation, different elements have been investigated as corrosion protection additives. Therefore binary and ternary tungsten alloys were synthesised using magnetron sputtering. The oxidation behaviour of films deposited on inert substrates was measured with a thermo-balance set up under synthetic air at temperatures up to 1000 deg. C. Binary alloys of W-Si showed good self passivation properties by forming a SiO 2 film at the surface. The oxidation rate of a compound containing 11 wt.% Si was reduced by a factor of 10 2 compared to pure tungsten between 800 deg. C and 1000 deg. C. Using ternary alloys the oxidation behaviour could be further improved. A compound of W

Fabrication of hydroxyapatite thin films for biomedical applications using RF magnetron sputtering

International Nuclear Information System (INIS)

Yamaguchi, Tetsuro; Tanaka, Yoshikazu; Ide-Ektessabi, Ari

2006-01-01

The calcium phosphate thin films for medical applications require similar chemical properties as those of natural bone as well as a uniform surface without any defect, such as cracks and pinholes. In this study, the calcium phosphate thin films were fabricated using RF magnetron sputtering deposition technique at discharge power of 200W, 300W and 400W. The target used for the deposition was sintered HAp. RBS analysis showed that the Ca/P ratio increased with the discharge power becoming close to that of Ca/P=1.67 in ideal HAp. XPS analysis revealed the presence of PO 4 3- and OH - bonds in the calcium phosphate films fabricated. The chemical properties of the calcium phosphate thin films were similar to those of ideal HAp. The AFM results revealed that the thin films prepared had a uniform surface

Fabrication of GaAs nanowire devices with self-aligning W-gate electrodes using selective-area MOVPE

International Nuclear Information System (INIS)

Ooike, N.; Motohisa, J.; Fukui, T.

2004-01-01

We propose and demonstrate a novel self-aligning process for fabricating the tungsten (W) gate electrode of GaAs nanowire FETs by using selective-area metalorganic vapor phase epitaxy (SA-MOVPE) where SiO 2 /W composite films are used to mask the substrates. First, to study the growth process and its dependence on mask materials, GaAs wire structures were grown on masked substrates partially covered with a single W layer or SiO 2 /W composite films. We found that lateral growth over the masked regions could be suppressed when a wire along the [110] direction and a SiO 2 /W composite mask were used. Using this composite mask, we fabricated GaAs narrow channel FETs using W as a Schottky gate electrode, and we were able to observe FET characteristics at room temperature

Reinforced cassava starch based edible film incorporated with essential oil and sodium bentonite nanoclay as food packaging material.

Science.gov (United States)

Iamareerat, Butsadee; Singh, Manisha; Sadiq, Muhammad Bilal; Anal, Anil Kumar

2018-05-01

Biodegradable packaging in food materials is a green technology based novel approach to replace the synthetic and conventional packaging systems. This study is aimed to formulate the biodegradable cassava starch based films incorporated with cinnamon essential oil and sodium bentonite clay nanoparticles. The films were characterized for their application as a packaging material for meatballs. The cassava starch films incorporated with sodium bentonite and cinnamon oil showed significant antibacterial potential against all test bacteria; Escherichia coli , Salmonella typhimurium and Staphylococcus aureus. Antibacterial effect of films increased significantly when the concentration of cinnamon oil was increased. The cassava starch film incorporated with 0.75% (w/w) sodium bentonite, 2% (w/w) glycerol and 2.5% (w/w) cinnamon oil was selected based on physical, mechanical and antibacterial potential to evaluate shelf life of meatballs. The meatballs stored at ambient temperature in cassava starch film incorporated with cinnamon oil and nanoclay, significantly inhibited the microbial growth till 96 h below the FDA limits (10 6  CFU/g) in foods compared to control films that exceeded above the limit within 48 h. Hence cassava starch based film incorporated with essential oils and clay nanoparticles can be an alternate approach as a packaging material for food industries to prolong the shelf life of products.

Electrolytic Synthesis of Ni-W-MWCNT Composite Coating for Alkaline Hydrogen Evolution Reaction

Science.gov (United States)

Elias, Liju; Hegde, A. Chitharanjan

2018-03-01

Nickel-tungsten multi-walled carbon nanotube (Ni-W-MWCNT) composite films were fabricated by an electrodeposition technique, and their electrocatalytic activity toward hydrogen evolution reaction (HER) was studied. Ni-W-MWCNT composite films with a homogeneous dispersion of MWCNTs were deposited from an optimal Ni-W plating bath containing functionalized MWCNTs, under galvanostatic condition. The presence of functionalized MWCNT was found to enhance the induced codeposition of the reluctant metal W and resulted in a W-rich composite coating with improved properties. The electrocatalytic behaviors of Ni-W-MWCNT composite coating toward HER were studied by cyclic voltammetry (CV) and chronopotentiometry techniques in 1.0 M KOH medium. Further, Tafel polarization and electrochemical impedance spectroscopy (EIS) studies were carried out to establish the kinetics of HER on the alloy and composite electrodes. The experimental results revealed that the addition of MWCNTs (having a diameter of around 10-15 nm) into the alloy plating bath has a significant effect on the electrocatalytic behavior of Ni-W alloy deposit. The Ni-W-MWCNT composite coating was found to show better HER activity than the conventional Ni-W alloy coating. The enhanced electrocatalytic activity of Ni-W-MWCNT composite coating is attributed to the MWCNT intersticed in the deposit matrix, evidenced by surface morphology, composition and phase structure of the coating through SEM, EDS and XRD analyses, respectively.

Atomic scale investigation of planar defects in 0.95Na{sub 0.5}Bi{sub 0.5}TiO{sub 3}–0.05BaTiO{sub 3} thin films on SrTiO{sub 3} (001) substrates

Energy Technology Data Exchange (ETDEWEB)

Jin, Xiao-Wei; Lu, Lu [The School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Mi, Shao-Bo, E-mail: shaobo.mi@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China); Cheng, Sheng; Liu, Ming [The School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Jia, Chun-Lin [The School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Peter Grünberg Institute and Ernst Ruska Center for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich, D-52425 Jülich (Germany)

2016-08-15

Thin films of lead-free piezoelectric 0.95Na{sub 0.5}Bi{sub 0.5}TiO{sub 3}–0.05BaTiO{sub 3} (0.95NBT–0.05BT) are epitaxially grown on single crystalline SrTiO{sub 3} (001) substrates at 800 °C, 850 °C and 900 °C, respectively, by a high-pressure sputtering deposition technique. The microstructure of the thin films is investigated by means of aberration-corrected scanning transmission electron microscopy. Planar defects are observed and the density of the defects increases with the increase of the film-growth temperature. Two types of planar defects in the films are studied at the atomic scale. One consists of groups of edge-sharing TiO{sub 6} octahedra with Bi atoms located between the TiO{sub 6} octahedral groups, and the other exists in the form of Na/Bi(Ba)−O{sub 2}−Na/Bi(Ba) layer parallel to the (010) plane of the films. Based on the structure feature of the planar defects, the propagation of the planar defects related to edge-sharing TiO{sub 6} octahedra within the films and from the film-substrate interface is discussed. Furthermore, the ordering of the planar defects is expected to form new structures. In comparison with the microstructure of 0.95NBT–0.05BT bulk materials, the appearance of the high-density planar defects observed within the films could be considered to be responsible for the difference in the physical properties between the bulk materials and the films. - Highlights: • NBT–BT films have been successfully prepared on SrTiO{sub 3} (001) substrates. • Complex planar defects of zigzag-like and Aurivillius-type have been determined. • The propagation of the planar defects in the films has been characterized. • The intergrowth of planar faults with NBT–BT structure units results in the formation of new structures. • The NBT–BT/SrTiO{sub 3} interface structure has been determined at the atomic scale.

77 FR 64973 - Don W. Gilbert Hydro Power, LLC; Notice of Application Accepted for Filing With the Commission...

Science.gov (United States)

2012-10-24

... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Project No. 14367-001] Don W. Gilbert...: Original Minor License. b. Project No.: 14367-001. c. Date filed: May 30, 2012. d. Applicant: Don W...(a)-825(r). (2006). h. Applicant Contact: Don W. Gilbert and DeAnn G. Somonich, Don W. Gilbert Hydro...

Properties of pentacene-based films prepared using a heated tungsten mesh

Energy Technology Data Exchange (ETDEWEB)

Heya, Akira, E-mail: heya@eng.u-hyogo.ac.jp; Matsuo, Naoto

2014-11-03

A heated tungsten (W) mesh, set between a pentacene source and a substrate in a vacuum chamber, was used to prepare a bulk-phase pentacene film and a pentacene-based organic semiconductor film. Since the pentacene molecules come into contact with the heated W mesh before reaching the substrate, their thermal energy is increased prior to deposition. As the mesh temperature was increased from 23 to 1200 °C, the intensity ratio of bulk to thin-film phases increased from 0 to 9.7. Above 1300 °C there is a notable decomposition reaction, the products of which were identified as dihydropentacene, p-distrylbenzene, and 2,2′-dimethyl-1,1′-binaphthalene. These decomposed precursors are expected to provide a potential source of large graphene sheets and graphene nanoribbons. - Highlights: • Organic semiconductor films were prepared using pentacene, H{sub 2} gas, and heated W mesh. • The effect of mesh temperature on film deposition was observed. • Pentacene decomposition above 1300 °C provides graphene precursors. • A method is proposed for controlling the sheet resistance of organic films.

Development of plastic elongation in nanocrystalline and amorphous Ni–W dual phase alloys by brushing technique

International Nuclear Information System (INIS)

Nakayama, S.; Adachi, H.; Yamasaki, T.

2015-01-01

Highlights: • A novel agitation technique called the brushing technique is proposed. • A homogeneous material can be obtained with the brushing technique. • The brushed material exhibits large plastic elongation with work hardening. - Abstract: A novel agitation technique, referred to as the “brushing technique” is proposed to treat the surface of a Ni–W alloy film during electrodeposition. This technique was developed to directly remove hydrogen bubbles on the film surface and to apply Ni ions to the interfacial layer with the substrate. The intrinsic mechanical properties of the Ni–W electrodeposits are then evaluated with respect to application. High resolution transmission electron microscopy observations revealed that both treated and untreated films have nanocrystallites of approximately 5 nm in diameter and an amorphous phase. There was a compositional difference of about. 1.4 at% W between the face side and the reverse side of the film that was not subjected to the brushing technique, whereas this difference was absent in the film subjected to the brushing technique. In addition, the brushing technique reduced the surface roughness of the film and decreased the number of defects. As a result, a large plastic strain of about. 2.9% was observed with work hardening under tensile testing

Effect of Cu buffer layer on magnetic anisotropy of cobalt thin films deposited on MgO(001 substrate

Directory of Open Access Journals (Sweden)

Syed Sheraz Ahmad

2016-11-01

Full Text Available Cobalt thin films with 5 nm thickness were prepared on single-crystal MgO (001 substrates with different thickness Cu buffer (0 nm, 5 nm, 10 nm, 20 nm. The structure, magnetic properties and transport behaviors were investigated by employing low-energy-electron-diffraction (LEED, magneto-optical Kerr effect (MOKE and anisotropic magnetoresistance (AMR. By comparing the magnetic properties of the sample as-deposited (without Cu buffer layer one with those having the buffer Cu, we found that the magnetic anisotropy was extremely affected by the Cu buffer layer. The magnetic anisotropy of the as-deposited, without buffer layer, sample shows the uniaxial magnetic anisotropy (UMA. We found that the symmetry of the magnetic anisotropy is changed from UMA to four-fold when the thickness of the Cu buffer layer reaches to 20 nm. Meanwhile, the coercivity increased from 49 Oe (without buffer layer to 300 Oe (with 20 nm Cu buffer, in the easy axis direction, as the thickness of the buffer layer increases. Moreover, the magnitudes of various magnetic anisotropy constants were determined from torque curves on the basis of AMR results. These results support the phenomenon shown in the MOKE.

Addition of Mn to Ge quantum dot surfaces—interaction with the Ge QD {105} facet and the Ge(001) wetting layer

International Nuclear Information System (INIS)

Nolph, C A; Kassim, J K; Floro, J A; Reinke, P

2013-01-01

The interaction of Mn with Ge quantum dots (QD), which are bounded by {105} facets, and the strained Ge wetting layer (WL), terminated by a (001) surface, is investigated with scanning tunneling microscopy (STM). These surfaces constitute the growth surfaces in the growth of Mn-doped QDs. Mn is deposited on the Ge QD and WL surface in sub-monolayer concentrations, and subsequently annealed up to a temperature of 400 ° C. The changes in bonding and surface topography are measured with STM during the annealing process. Mn forms flat islands on the Ge{105} facet, whose shape and position are guided by the rebonded step reconstruction of the facet. Voltage-dependent STM images reflect the Mn-island interaction with the empty and filled states of the Ge{105} reconstruction. Scanning tunneling spectra (STS) of the Ge{105} facet and as-deposited Mn-islands show a bandgap of 0.8 eV, and the Mn-island spectra are characterized by an additional empty state at about 1.4 eV. A statistical analysis of Mn-island shape and position on the QD yields a slight preference for edge positions, whereas the QD strain field does not impact Mn-island position. However, the formation of ultra-small Mn-clusters dominates on the Ge(001) WL, which is in contrast to Mn interaction with unstrained Ge(001) surfaces. Annealing to T 5 Ge 3 from a mass balance analysis. This reaction is accompanied by the disappearance of the original Mn-surface structures and de-wetting of Mn is complete. This study unravels the details of Mn–Ge interactions, and demonstrates the role of surface diffusion as a determinant in the growth of Mn-doped Ge materials. Surface doping of Ge-nanostructures at lower temperatures could provide a pathway to control magnetism in the Mn–Ge system. (paper)

Preparation of Modified Films with Protein from Grouper Fish

Directory of Open Access Journals (Sweden)

M. A. Valdivia-López

2016-01-01

Full Text Available A protein concentrate (PC was obtained from Grouper fish skin and it was used to prepare films with different amounts of sorbitol and glycerol as plasticizers. The best performing films regarding resistance were then modified with various concentrations of CaCl2, CaSO4 (calcium salts, and glucono-δ-lactone (GDL with the purpose of improving their mechanical and barrier properties. These films were characterized by determining their mechanical properties and permeability to water vapor and oxygen. Formulations with 5% (w/v protein and 75% sorbitol and 4% (w/v protein with a mixture of 15% glycerol and 15% sorbitol produced adequate films. Calcium salts and GDL increased the tensile fracture stress but reduced the fracture strain and decreased water vapor permeability compared with control films. The films prepared represent an attractive alternative for being used as food packaging materials.

Performance evaluation of cassava starch-zinc nanocomposite film for tomatoes packaging

Directory of Open Access Journals (Sweden)

Adeshina Fadeyibi

2017-05-01

Full Text Available Biodegradable nanocomposite films are novel materials for food packaging because of their potential to extend the shelf life of food. In this research, the performance of cassava starch-zincnanocomposite film was evaluated for tomatoes packaging. The films were developed by casting the solutions of 24 g cassava starch, 0-2% (w/w zinc nanoparticles and 55% (w/w glycerol in plastic mould of 12 mm depth. The permeability of the films, due to water and oxygen, was investigated at 27°C and 65% relative humidity while the mechanical properties were determined by nanoindentation technique. The average thickness of the dried nanocomposite films was found to be 17±0.13 μm. The performances of films for tomatoes packaging was evaluated in comparison with low density polyethylene (LDPE; 10 μm at the temperature and period ranges of 10-27°C and 0-9 days, respectively. The quality and microbial attributes of the packaged tomatoes, including ascorbic acid, β-carotene and total coliform were analysed at an interval of 3 days. The results revealed that the water vapour permeability increased while the oxygen permeability decreased with the nanoparticles (P<0.05. The hardness, creep, elastic and plastic works, which determined the plasticity index of the film, decreased generally with the nanoparticles. The films containing 1 and 2% of the nanoparticles suppressed the growth of microorganisms and retained the quality of tomatoes than the LDPE at 27°C and day-9 of packaging (P<0.05. The results implied that the film could effectively be used for tomatoes packaging due to their lower oxygen permeability, hardness, elastic and plastic works.

Electrochromic Properties of Tungsten Oxide Films Prepared by Reactive Sputtering

Science.gov (United States)

Kim, Min Hong; Kang, Tai Young; Jung, Yu Sup; Kim, Kyung Hwan

2013-05-01

WO3-x thin films were deposited on induim tin oxide (ITO) glass substrates with various oxygen flow ratios from 0.55 to 0.7 by the reactive facing-target sputtering method, at a power density of 4 W/cm2 and room temperature. The structural properties of the WO3-x thin films were measured by X-ray diffractometry and Raman spectral analysis. As-deposited WO3-x thin films had an amorphous structure. In the Raman spectra, WO3-x thin films exhibited two strong peaks at 770 and 950 cm-1 attributed to the vibrations of W6+-O and W6+=O bonds, respectively. The electrochemical and optical properties of WO3-x thin films were measured by cyclic voltammetry and UV/vis spectrometry. The results showed the highest charge density at an oxygen flow ratio of 0.7 and the highest transmittance in the visible range. The maximum coloration efficiency was 30.82 cm2/C at an oxygen flow ratio of 0.7.

A miracle happening to a laser beam in a soap film

International Nuclear Information System (INIS)

Startsev, Aleksandr V; Stoilov, Yurii Yu

2003-01-01

When a 10 μW - 3 W laser beam (for example, at 632.8 nm) is focused into a usual soap film of thickness between 10 nm and 10 μm from the side or through a defect on the film surface, the self-channeling of the beam propagating in the film is observed. The beam also exhibits self-branching into submicron filaments, the so-called whiskers of length several tens of centimetres. The results of experiments on the dynamics of behaviour of these whiskers in a soap film, their polariton nature, and possible applications are discussed. (letters)

Dependences of microstructure and critical current density on the thickness of YBa2Cu3O7-x film prepared by pulsed laser deposition on buffered Ni–W tape

International Nuclear Information System (INIS)

Xu, Da; Wang, Ying; Liu, Linfei; Li, Yijie

2013-01-01

YBa 2 Cu 3 O 7−x (YBCO) films with different thicknesses were fabricated on buffered Ni–W tapes by pulsed laser deposition. The thickness dependences of microstructure and critical current density (J c ) of YBCO film were systematically investigated. The microstructure and surface morphology of YBCO film were characterized by X-ray diffraction, optical microscopy, field emission scanning electron microscopy and atomic force microscopy. And the critical current (I c ) of YBCO film was measured by the conventional four-probe method. We found that the full width at half maximum values of both omega and phi scan rocking curves, the content of a-axis oriented grain, and surface roughness of YBCO film all increased with augmenting the thickness of YBCO film. It was also found that with increasing the thickness of YBCO film from 0.3 μm to 1.5 μm, the I c of YBCO film increased from 72 A/cm to 248 A/cm and yet J c of YBCO film decreased from 2.1 × 10 6 A/cm 2 to 1.6 × 10 6 A/cm 2 . Our results indicated that the microstructure and J c of YBCO film were largely dependent on the thickness of YBCO film under the optimized deposition condition of substrate temperature. - Highlights: ► YBa 2 Cu 3 O 7−x (YBCO) films with different thicknesses were grown on metallic tapes. ► The texture and critical current were dependent on the thickness of YBCO film. ► Thickness effect was weakened by fabricating YBCO film layer by layer

Physical stability and moisture sorption of aqueous chitosan-amylose starch films plasticized with polyols

DEFF Research Database (Denmark)

Cervera, Mirna Fernández; Karjalainen, Milja; Airaksinen, Sari

2004-01-01

The short-term stability and the water sorption of films prepared from binary mixtures of chitosan and native amylose maize starch (Hylon VII) were evaluated using free films. The aqueous polymer solutions of the free films contained 2% (w/w) film formers, glycerol, or erythritol as a plasticizer...... in the crystallinity of the films are evident within a 3-month period of storage, and the changes in the solid state are dependent on the plasticizer and storage conditions. When stored at ambient conditions for 3 months, the aqueous chitosan-amylose starch films plasticized with erythritol exhibited a partly...

77 FR 21555 - Manning, Richard W.; Notice of Filing

Science.gov (United States)

2012-04-10

... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Docket No. ID-6835-001] Manning, Richard W.; Notice of Filing Take notice that on April 2, 2012, Richard W. Manning submitted for filing... not serve to make protestants parties to the proceeding. Any person wishing to become a party must...

Studying the initial stages of film electrodeposition of magnetic cobalt-tungsten alloys

International Nuclear Information System (INIS)

Rachinskas, V.S.; Orlovskaya, L.V.; Parfenov, V.A.; Yasulajtene, V.V.

1996-01-01

Initial stages of magnetic film electrodeposition by recording potentiodynamic polarization and j c ,t-curves, determination of surface structure of electrolytically deposited films by the method of XPS and study of thin coating properties have been considered. It is shown that at initial stage of electrodeposition of magnetic Co-W-films a sharp decrease in cathode process rate and formation of Co(OH) 2 , WO 3 and/or WO 4 2- occur on Cu-cathode surface. Electrodeposition of metallic magnetic Co-W-alloy, consisting of Co, W and containing basic compounds of co-deposited metals, takes place after a certain time period depending on deposition E c . 6 refs.; 3 figs

Physical, mechanical and antimicrobial properties of starch films incorporated with ε-poly-L-lysine.

Science.gov (United States)

Zhang, Liming; Li, Ruichao; Dong, Feng; Tian, Aiying; Li, Zhengjun; Dai, Yujie

2015-01-01

Starch/ε-poly-L-lysine (ε-PL) composite films were prepared by combining 4% (w/v) gelatinized cornstarch and varying the level of ε-PL. The physical, mechanical and antimicrobial properties of these films were investigated. Fourier-transform infrared spectra (FT-IR) showed that the carbonyl group stretching vibration band of the ε-PL molecule shifted from 1646 cm(-1) to 1673 cm(-1) in the composite films. Differential scanning calorimetry (DSC) results indicated that there were sharp endothermal peaks at 215-230 °C for the composite films. These results indicated that there was an intense interaction between the two components. The films incorporated with ε-PL showed a higher tensile strength (TS) and elongation-at-break (E) than those of the starch film alone. These composite films exhibited effective inhibition against Escherichia coli and Bacillus subtilis, films containing 2% (w/w) ε-PL effectively suppressed the growth of the tested microbes (Pstarch/ε-PL films showed a low inhibitory effect on Aspergillus niger. This antimicrobial trend of the composite films was in agreement with the results of free ε-PL. Copyright © 2014 Elsevier Ltd. All rights reserved.

Adsorption of lithium-lanthanum films on the (100) tungsten face

International Nuclear Information System (INIS)

Gupalo, M.S.; Smereka, T.P.; Babkin, G.V.; Palyukh, B.M.

1982-01-01

The method of contact potential difference is used to investigate combined adsorption of lithium-lanthanum on the (100) tungsten face. The data on work functions and thermal stability of mixed lithium-lanthanum films are obtained. The presence of lanthanum on the W(100) surface leads to appearance of minimum of work functions unobserved for the Li-W(100) system, minimum work functions and optimum lithium concentration in a mixed film are decreased at initial lanthanum coating increase. The presence of lanthanum on the W(100) face leads to lithium adsorption heat decrease

Preparation and characterization of bionanocomposite films based on potato starch/halloysite nanoclay.

Science.gov (United States)

Sadegh-Hassani, Fatemeh; Mohammadi Nafchi, Abdorreza

2014-06-01

In this research casting method was used to prepare potato starch based bio-nanocomposite films with halloysite nanoclay as the reinforcing materials. The composition included potato starch with 40% (w/w) of a mixture of sorbitol/glycerol (weight ratio of 3 to 1as plasticizer) with nanoclay (0-5% w/w). The films were dried under controlled conditions. Physicochemical properties such as solubility in water, water absorption capacity (WAC), water vapour permeability (WVP), oxygen permeability, and mechanical properties of the films were measured. Results showed that by increasing the concentration of nanoclay, mechanical properties of films were improved. Tensile strength was increased from 7.33 to 9.82MPa, and elongation at break decreased from 68.0 to 44.0%. Solubility in water decreased from 35 to 23%, and heat seal strength increased from 375 to 580N/m. Also incorporation of clay nanoparticles in the structure of biopolymer decreased permeability of the gaseous molecules. In summary, addition of halloysite nanoclay, improve the barrier and mechanical properties of potato starch films and this bionanocomposites have high potential to be used for food packaging purposes. Copyright © 2014 Elsevier B.V. All rights reserved.

Role of hydrogen in altering the electrical properties of gold, titanium, and tungsten films

International Nuclear Information System (INIS)

Rodbell, K.P.; Ficalora, P.J.

1989-01-01

Hydrogen was found to alter the electrical properties of gold (Au), titanium (Ti), and tungsten (W) thin films deposited on SiO 2 /Si substrates. Specifically, the addition of H 2 was found to reduce both hillock growth and the rate of electromigration in Au and Ti films. The resistance and 1/f noise of unpassivated Au, Ti, and W films was also found to decrease in H 2 . The influence of H 2 adsorption, absorption, compound formation, and film crystal structure [Au (fcc), Ti (hcp), and W (bcc)] on the rate of electromigration is explored. The data suggest that a modification of the stress state at the metal film/substrate interface is responsible for the decreased resistance, 1/f noise, and electromigration rates observed in H 2

Ellipsometry-based combination of isothermal sorption-desorption measurement and temperature programmed desorption technique: A probe for interaction of thin polymer films with solvent vapor

Science.gov (United States)

Efremov, Mikhail Yu.; Nealey, Paul F.

2018-05-01

An environmental chamber equipped with an in situ spectroscopic ellipsometer, programmatic vapor pressure control, and variable temperature substrate holder has been designed for studying polymer coating behavior during an exposure to a solvent vapor and also for probing the residual solvent in the film afterwards. Both sorption-desorption cycle at a constant temperature and temperature programmed desorption (TPD) of the residual solvent manifest themselves as a change of the film thickness. Monitoring of ellipsometric angles of the coating allows us to determine the thickness as a function of the vapor pressure or sample temperature. The solvent vapor pressure is precisely regulated by a computer-controlled pneumatics. TPD spectra are recorded during heating of the film in an oil-free vacuum. The vapor pressure control system is described in detail. The system has been tested on 6-170 nm thick polystyrene, poly(methyl methacrylate), and poly(2-vinyl pyridine) films deposited on silicon substrates. Liquid toluene, water, ethanol, isopropanol, cyclohexane, 1,2-dichloroethane, and chlorobenzene were used to create a vapor atmosphere. Typical sorption-desorption and TPD curves are shown. The instrument achieves sub-monolayer sensitivity for adsorption studies on flat surfaces. Polymer-solvent vapor systems with strong interaction demonstrate characteristic absorption-desorption hysteresis spanning from vacuum to the glass transition pressure. Features on the TPD curves can be classified as either glass transition related film contraction or low temperature broad contraction peak. Typical absorption-desorption and TPD dependencies recorded for the 6 nm thick polystyrene film demonstrate the possibility to apply the presented technique for probing size effects in extremely thin coatings.

Room Temperature Ferromagnetic Mn:Ge(001

Directory of Open Access Journals (Sweden)

George Adrian Lungu

2013-12-01

Full Text Available We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001, heated at relatively high temperature (starting with 250 °C. The samples were characterized by low energy electron diffraction (LEED, scanning tunneling microscopy (STM, high resolution transmission electron microscopy (HRTEM, X-ray photoelectron spectroscopy (XPS, superconducting quantum interference device (SQUID, and magneto-optical Kerr effect (MOKE. Samples deposited at relatively elevated temperature (350 °C exhibited the formation of ~5–8 nm diameter Mn5Ge3 and Mn11Ge8 agglomerates by HRTEM, while XPS identified at least two Mn-containing phases: the agglomerates, together with a Ge-rich MnGe~2.5 phase, or manganese diluted into the Ge(001 crystal. LEED revealed the persistence of long range order after a relatively high amount of Mn (100 nm deposited on the single crystal substrate. STM probed the existence of dimer rows on the surface, slightly elongated as compared with Ge–Ge dimers on Ge(001. The films exhibited a clear ferromagnetism at room temperature, opening the possibility of forming a magnetic phase behind a nearly ideally terminated Ge surface, which could find applications in integration of magnetic functionalities on semiconductor bases. SQUID probed the co-existence of a superparamagnetic phase, with one phase which may be attributed to a diluted magnetic semiconductor. The hypothesis that the room temperature ferromagnetic phase might be the one with manganese diluted into the Ge crystal is formulated and discussed.

Microstructure and thermochromic properties of VO{sub X}-WO{sub X}-VO{sub X} ceramic thin films

Energy Technology Data Exchange (ETDEWEB)

Khamseh, S.; Ghahari, M. [Institute for Color Science and Technology, Department of Nanomaterial and Nanocoatings, Tehran (Iran, Islamic Republic of); Araghi, H. [Islamic Azad University, Department of Materials Engineering, Science and Research Branch, Tehran (Iran, Islamic Republic of); Faghihi Sani, M.A. [Sharif University of Technology, Department of Materials Science and Engineering, Tehran (Iran, Islamic Republic of)

2016-03-15

W-doped VO{sub 2} films have been synthesized via oxygen annealing of V-W-V (vanadium-tungsten-vanadium) multilayered films. The effects of middle layer's thickness of V-W-V multilayered film on structure and properties of VO{sub X}-WO{sub X}-VO{sub X} ceramic thin films were investigated. The as-deposited V-W-V multilayered film showed amorphous-like structure when mixed structure of VO{sub 2} (M) and VO{sub 2} (B) was formed in VO{sub X}-WO{sub X}-VO{sub X} ceramic thin films. Tungsten content of VO{sub X}-WO{sub X}-VO{sub X} ceramic thin films increased with increasing middle layer's thickness. With increasing middle layer's thickness, room temperature square resistance (R{sub sq}) of VO{sub X}-WO{sub X}-VO{sub X} ceramic thin films increased from 65 to 86 kΩ/sq. The VO{sub X}-WO{sub X}-VO{sub X} ceramic thin film with the thinnest middle layer showed significant SMT (semiconductor-metal transition) when SMT became negligible on increasing middle layer's thickness. (orig.)

Film jako produkt marketingowy − studium dwóch przypadków

Directory of Open Access Journals (Sweden)

Anna Wywioł

2017-08-01

Full Text Available The popular trend that can be observed in the film promotion since 1997 is activating viewers and ennobled them to the rank of creators, having a real impact on the storyline or “insiders” – people who know more about the new production through the information that appears on different media platforms. Ways to engage the recipient in the media discourse, accompanying promotional activities for the film – understood in the category of marketing product – can be traced back to the example of two movies – The Blair Witch Project and The Dark Knight, which − due to an innovative approach to the subject of promotion and engage potential viewers – materialized as unusual in compared to traditional marketing, contributing to the spectacular box office success, acquiring new recipients, creating or expanding existing film fan clubs and to changes in film marketing, which today extends or reinterpreted these schemes of immersion.

Self-organized nano-structuring of CoO islands on Fe(001)

International Nuclear Information System (INIS)

Brambilla, A.; Picone, A.; Giannotti, D.; Riva, M.; Bussetti, G.; Berti, G.; Calloni, A.; Finazzi, M.; Ciccacci, F.; Duò, L.

2016-01-01

Highlights: • CoO grown on the Co(001)-p(1 × 1)O surface of a 5 ML thick Co layer on Fe(001). • The growth process does not induce Fe cation migration and/or oxidation. • A misfit dislocation network develops in the very early stages of CoO growth. • Such a network acts as a template for a three-dimensional CoO nanostructuration. • The dimensions of CoO wedding-cake square mounds scale linearly with thickness. - Abstract: The realization of nanometer-scale structures through bottom-up strategies can be accomplished by exploiting a buried network of dislocations. We show that, by following appropriate growth steps in ultra-high vacuum molecular beam epitaxy, it is possible to grow nano-structured films of CoO coupled to Fe(001) substrates, with tunable sizes (both the lateral size and the maximum height scale linearly with coverage). The growth mode is discussed in terms of the evolution of surface morphology and chemical interactions as a function of the CoO thickness. Scanning tunneling microscopy measurements reveal that square mounds of CoO with lateral dimensions of less than 25 nm and heights below 10 atomic layers are obtained by growing few-nanometers-thick CoO films on a pre-oxidized Fe(001) surface covered by an ultra-thin Co buffer layer. In the early stages of growth, a network of misfit dislocations develops, which works as a template for the CoO nano-structuring. From a chemical point of view, at variance with typical CoO/Fe interfaces, neither Fe segregation at the surface nor Fe oxidation at the buried interface are observed, as seen by Auger electron spectroscopy and X-ray Photoemission Spectroscopy, respectively.

Investigation of oxidation resistance of Ni-Ti film used as oxygen diffusion barrier layer

International Nuclear Information System (INIS)

Liu, B.T.; Yan, X.B.; Zhang, X.; Zhou, Y.; Guo, Y.N.; Bian, F.; Zhang, X.Y.

2009-01-01

Ni-Ti films prepared at 10 W and 70 W by rf magnetron sputtering are investigated as the oxygen diffusion barrier layer, it is found that crystallinity of Ni-Ti film does not greatly depend on the deposition power. X-ray photoelectron spectroscopy indicates that Ni is still in the form of metallic state from the binding energies of both Ni 2p 3/2 and Ni 2p 1/2 spectra for the sample with 10 W prepared Ni-Ti, however, Ni is oxidized for 70 W prepared Ni-Ti film. Moreover, the (La 0.5 Sr 0.5 )CoO 3 /Pb(Zr 0.40 Ti 0.60 )O 3 /(La 0.5 Sr 0.5 )CoO 3 capacitor grown on high power prepared Ni-Ti film is leaky, however, the capacitor on low power prepared Ni-Ti film possesses very promising physical properties (i.e. remnant polarization of ∼27 μC/cm 2 at 5 V and maximum dielectric constant of 940). Leakage current density of the capacitor grown on low power prepared Ni-Ti film is further investigated, it meets ohmic behavior ( 1.0 V).

Hybrid methyl green/cobalt-polyoxotungstate nanostructured films: Self-assembly, electrochemical and electrocatalytic properties

Energy Technology Data Exchange (ETDEWEB)

Novais, Hugo C.; Fernandes, Diana M., E-mail: diana.fernandes@fc.up.pt; Freire, Cristina, E-mail: acfreire@fc.up.pt

2015-08-30

Graphical abstract: Hybrid {MG/Co(PW9)2}{sub n} multilayer films were successfully prepared and exhibit W-based electrocatalytic activity towards reduction of nitrite and iodate anions. - Highlights: • Layer-by-layer hybrid films {MG/Co(PW_9)_2}{sub n} were sucessfully prepared. • UV–vis was used to monitor film build-up and showed regular stepwise film growth. • XPS confirmed sucessfull {MG/Co(PW_9)_2}{sub n} film fabrication. • Films showed excellent electrocatalytic activity towards nitrite and iodate reduction. - Abstract: Hybrid multilayer films were prepared by alternately depositing cationic dye methyl green (MG) and anionic sandwich-type polyoxometalate K{sub 10}[Co{sub 4}(H{sub 2}O){sub 2}(PW{sub 9}O{sub 34}){sub 2}] (Co(PW{sub 9}){sub 2}) via electrostatic layer-by-layer (LbL) self-assembly method. Film build-up was monitored by UV–vis spectroscopy which showed a regular stepwise growth. X-ray photoelectron spectroscopy data confirmed the successful fabrication of the hybrid films with MG-Co(PW{sub 9}){sub 2} composition and scanning electron microscopy images revealed a completely covered surface with a non-uniform distribution of the molecular species. Electrochemical characterization of films by cyclic voltammetry revealed two tungsten-based reduction processes in the potential range between −0.9 and −0.5 V due to W{sup VI} → W{sup V} in Co(PW{sub 9}){sub 2}. Studies with the redox probes, [Fe(CN){sub 6}]{sup 3−/4−} and [Ru(NH{sub 3}){sub 6}]{sup 3+/2+}, revealed that not only the electrostatic attractions or repulsions have effects on the kinetics of the probe reactions, but also the film thickness. Additionally, the {MG/Co(PW_9)_2}{sub n} multilayer films exhibit efficient W-based electrocatalytic activity towards reduction of nitrite and iodate.

Discovery of a thermally persistent h.c.p. solid-solution phase in the Ni-W system

International Nuclear Information System (INIS)

Kurz, S. J. B.; Leineweber, A.; Maisel, S. B.; Höfler, M.; Müller, S.; Mittemeijer, E. J.

2014-01-01

Although the accepted Ni-W phase diagram does not reveal the existence of h.c.p.-based phases, h.c.p.-like stacking sequences were observed in magnetron-co-sputtered Ni-W thin films at W contents of 20 to 25 at. %, by using transmission electron microscopy and X-ray diffraction. The occurrence of this h.c.p.-like solid-solution phase could be rationalized by first-principles calculations, showing that the vicinity of the system's ground-state line is populated with metastable h.c.p.-based superstructures in the intermediate concentration range from 20 to 50 at. % W. The h.c.p.-like stacking in Ni-W films was observed to be thermally persistent, up to temperatures as high as at least 850 K, as evidenced by extensive X-ray diffraction analyses on specimens before and after annealing treatments. The tendency of Ni-W for excessive planar faulting is discussed in the light of these new findings

Study on the electrical transport properties of La{sub 2/3}Ba{sub 1/3}MnO{sub 3}:Ag{sub 0.04}/LaAlO{sub 3} (001) films

Energy Technology Data Exchange (ETDEWEB)

Liu, Xiang, E-mail: lxjim@126.com; Zhao, Shuang; Zhang, Shao-Chun

2017-01-01

La{sub 2/3}Ba{sub 1/3}MnO{sub 3}: wt%Ag{sub x} (LBMO:Ag{sub x}, x=0.04) films were prepared on single crystalline (001)-orientated LaAlO{sub 3} substrates by pulsed laser deposition technique. All the samples show along the (00l) orientation in rhombohedral structure with R3c space group. The surface roughness (Ra), insulator-metal transition temperature (Tp) and resistivity at Tp (ρ{sub Tp}) of the LBMO:Ag{sub 0.04} films reached optimal values of 3.29 nm, 288 K and 0.033 Ω cm at 740 °C, respectively. The improvement of electrical transport properties in the films are attributed to the optimal growth temperature and Ag-doping improve the microstructure of the surfaces, grain boundaries (GBs) in connectivity and better crystallization. In addition, the electrical conduction behaviors can be well fitted with the grain/domain boundary, electron–electron and magnon scattering mechanisms in the ferromagnetic metallic region (TTp).

Effect of composition on SILAR deposited CdxZn1-xS thin films

Science.gov (United States)

Ashith V., K.; Gowrish Rao, K.

2018-04-01

In the group of II-VI compound semiconductor, cadmium zinc sulphide (CdxZn1-xS) thin films have broad application in photovoltaic, optoelectronic devices etc. For heterojunction aspects, CdxZn1-xS thin film can be used as heterojunction partner for CdTe as the absorber layer. In this work, CdZnS thin films prepared on glass substrates by Successive Ion Layer Adsorption and Reaction (SILAR) method by varying the composition. The XRD patterns of deposited films showed polycrystalline with the hexagonal phase. The crystallite size of the films was estimated from W-H plot. The bond length of the film varied w.r.to the composition of the CdxZn1-xS films. The urbach energy of the films was calcualted from absorbance data.

Colour centres in amorphous tungsten trioxide thin films

International Nuclear Information System (INIS)

Kleperis, J.J.; Cikmach, P.D.; Lusis, A.R.

1984-01-01

Magnetic, optical, and electrical properties of thin tungsten trioxide (a-WO 3 ) films obtained on substrates with different temperatures and annealed in air and vacuum are investigated. On the basis of these results and recent structural investigations a structure model of the a-WO 3 film is given: a spatial network of tightly bounded clusters which are built from hydrated WO 6 octahedra. These octahedra contain terminal oxygens and being axially distorted they are the sites for localization of injected electrons. The colour centres formed are paramagnetic (ESR signal from W 5+ ) and their optical absorption is satisfactorily described by the intervalence charge transfer between the localized states of W 5+ and W 6+ ions. (author)

Factors affecting color strength of printing on film-coated tablets by UV laser irradiation: TiO2 particle size, crystal structure, or concentration in the film, and the irradiated UV laser power.

Science.gov (United States)

Hosokawa, Akihiro; Kato, Yoshiteru

2011-08-01

The purpose of this article is to study factors affecting color strength of printing on film-coated tablets by ultraviolet (UV) laser irradiation: particle size, crystal structure, or concentration of titanium dioxide (TiO2) in film, and irradiated UV laser power. Hydroxypropylmethylcellulose films containing 4.0% of TiO2, of which BET particle sizes were ranging from 126.1 to 219.8 nm, were irradiated 3.14W of UV laser at a wavelength 355 nm to study effects of TiO2 particle size and crystal structure on the printing. The films containing TiO2 concentration ranging from 1.0 to 7.7% were irradiated 3.14 or 5.39W of the UV laser to study effect of TiO2 concentration on the printing. The film containing 4.0% of TiO2, was irradiated the UV laser up to 6.42W to study effect of the UV laser power on the printing. The color strength of the printed films was estimated by a spectrophotometer as total color difference (dE). Particle size, crystal structure, and concentration of TiO2 in the films did not affect the printing. In the relationship between the irradiated UV laser power and dE, there found an inflection point (1.6W). When the UV laser power was below 1.6W, the films were not printed. When it was beyond the point, total color difference increased linearly in proportion with the irradiated laser power. The color strength of the printing on film was not changed by TiO2 particle size, crystal structure, and concentration, but could be controlled by regulating the irradiated UV laser power beyond the inflection point.

Improvement of food packaging related properties in whey protein isolate‑based nanocomposite films and coatings by addition of montmorillonite nanoplatelets

Science.gov (United States)

Schmid, Markus; Merzbacher, Sarah; Brzoska, Nicola; Müller, Kerstin; Jesdinszki, Marius

2017-11-01

In the present study the effects of the addition of montmorillonite (MMT) nanoplatelets on whey protein isolate (WPI)-based nanocomposite films and coatings were investigated. The main objective was the development of WPI-based MMT-nanocomposites with enhanced barrier and mechanical properties. WPI-based nanocomposite cast-films and coatings were prepared by dispersing 0 % (reference sample), 3 %, 6 %, 9 % (w/w protein) MMT, or, depending on the protein concentration, also 12 % and 15 % (w/w protein) MMT into native WPI-based dispersions, followed by subsequent denaturation during the drying and curing process. The natural MMT nanofillers could be randomly dispersed into film-forming WPI-based nanodispersions, displaying good compatibility with the hydrophilic biopolymer matrix. As a result, by addition of 15 % (w/w protein) MMT into 10 % (w/w dispersion) WPI-based cast-films or coatings, the oxygen permeability (OP) was reduced by 91 % for glycerol-plasticized and 84 % for sorbitol-plasticized coatings, water vapor transmission rate (WVTR) was reduced by 58 % for sorbitol-plasticized cast-films. Due to the addition of MMT- nanofillers the Young’s modulus and tensile strength improved by 315 % and 129 %, respectively, whereas elongation at break declined by 77 % for glycerol-plasticized cast-films. In addition, comparison of plasticizer type revealed that sorbitol-plasticized cast-films were generally stiffer and stronger, but less flexible compared glycerol-plasticized cast-films. Viscosity measurements demonstrated good processability and suitability for up-scaled industrial processes of native WPI-based nanocomposite dispersions, even at high nanofiller-loadings. These results suggest that the addition of natural MMT- nanofillers into native WPI-based matrices to form nanocomposite films and coatings holds great potential to replace well-established, fossil-based packaging materials for at least certain applications such as oxygen barriers as part of

Morphological and microstructural characterization of nanostructured pure α-phase W coatings on a wide thickness range

Energy Technology Data Exchange (ETDEWEB)

Gordillo, N., E-mail: nuri.gordillo@gmail.com [Instituto de Fusión Nuclear, ETSI de Industriales, Universidad Politécnica de Madrid, C/José Gutierrez Abascal, 2, E-28006 Madrid (Spain); CEI Campus Moncloa, UCM-UPM, Madrid (Spain); Panizo-Laiz, M. [Instituto de Fusión Nuclear, ETSI de Industriales, Universidad Politécnica de Madrid, C/José Gutierrez Abascal, 2, E-28006 Madrid (Spain); Tejado, E. [Department of Materials Science, Research Centre on Safety and Durability of Structures and Materials (CISDEM), UPM-CSIC, C/Profesor Aranguren s/n, E-28040 Madrid (Spain); Centro Nacional de Investigaciones Metalúrgicas, CENIM-CSIC, Madrid (Spain); Fernandez-Martinez, I. [Instituto de Energía Solar (IES), Universidad Politécnica de Madrid, Avenida Complutense s/n, E-28040 Madrid (Spain); Instituto de Microelectrónica de Madrid, IMM-CNM-CSIC, Isaac Newton 8 PTM, Tres Cantos, E-28760 Madrid (Spain); Rivera, A. [Instituto de Fusión Nuclear, ETSI de Industriales, Universidad Politécnica de Madrid, C/José Gutierrez Abascal, 2, E-28006 Madrid (Spain); Pastor, J.Y. [Department of Materials Science, Research Centre on Safety and Durability of Structures and Materials (CISDEM), UPM-CSIC, C/Profesor Aranguren s/n, E-28040 Madrid (Spain); Castro, C. Gómez de [Departamento de Física de Materiales, Facultad de CC. Químicas, Universidad Complutense de Madrid, Ciudad Universitaria s/n, E-28040 Madrid (Spain); and others

2014-10-15

Highlights: • Pure α-phase tungsten nanostructures were deposited by DC-magnetron sputtering. • Non-delaminated coatings were achieved at powers ≤50 W. • The coating thicknesses vary from 30 nm up to ∼4.0 μm. • The influence of the substrate on the coating properties was investigated. • We report on the morphological, microstructural and mechanical properties. - Abstract: Nanostructured tungsten (nanoW) coatings have been deposited by DC magnetron sputtering. First, the influence of the sputtering power on the adhesion of the coatings to the substrate was investigated by depositing coatings at powers varying from 30 up to 220 W. Non-delaminated coatings were achieved at powers ≤50 W. Second, the influence of coating thickness on the morphological, microstructural and mechanical properties was investigated for films deposited at 50 W with thicknesses varying from 30 nm up to ∼4.0 μm. SEM images reveal that all the films are highly compact, consisting of nanometer sized columns that grow perpendicular to the substrate. XRD data evidence that films are monophasic, being made of pure α-phase. All coatings show compressive stress and low micro-strain. Nanoindentation tests show that coatings have a hardness higher than that reported for coarse grained W. No significant dependence of the previous properties on coating thickness was observed. Finally, the influence of the substrate on coatings properties was studied, by depositing a W coating at a power of 50 W on a commercial steel substrate: no significant dependence was found.

Transparent Low Electrostatic Charge Films Based on Carbon Nanotubes and Polypropylene. Homopolymer Cast Films

Directory of Open Access Journals (Sweden)

Zoe Vineth Quiñones-Jurado

2018-01-01

Full Text Available Use of multi-wall carbon nanotubes (MWCNTs in external layers (A-layers of ABA-trilayer polypropylene films was investigated, with the purpose of determining intrinsic and extrinsic factors that could lead to antistatic behavior of transparent films. The incorporation of 0.01, 0.1, and 1 wt % of MWCTNs in the A-layers was done by dilution through the masterbatch method. Masterbatches were fabricated using isotactic polypropylene (iPP with different melt flow indexes 2.5, 34, and 1200 g/10 min, and using different ultrasound assist methods. It was found that films containing MWCNTs show surface electrical resistivity of 1012 and 1016 Ω/sq, regardless of the iPP melt flow index (MFI and masterbatch fabrication method. However, electrostatic charge was found to depend upon the iPP MFI, the ultrasound assist method and MWCNT concentration. A percolation electron transport mechanism was determined most likely responsible for this behavior. Optical properties for films containing MWCNTs do not show significant differences compared to the reference film at MWCNT concentrations below 0.1 wt %. However, an enhancement in brightness was observed, and it was attributed to ordered iPP molecules wrapping the MWCNTs. Bright transparent films with low electrostatic charge were obtained even for MWCNTs concentrations as low as 0.01 wt %.

Effects of excipients on the tensile strength, surface properties and free volume of Klucel® free films of pharmaceutical importance

International Nuclear Information System (INIS)

Gottnek, Mihály; Süvegh, Károly; Pintye-Hódi, Klára; Regdon, Géza

2013-01-01

The physicochemical properties of polymers planned to be applied as mucoadhesive films were studied. Two types of Klucel ® hydroxypropylcellulose (LF and MF) were used as film-forming polymers. Hydroxypropylcellulose was incorporated in 2 w/w% with glycerol and xylitol as excipients and lidocaine base as an active ingredient at 5, 10 or 15 w/w% of the mass of the film-forming polymer. The free volume changes of the films were investigated by positron annihilation lifetime spectroscopy, the mechanical properties of the samples were measured with a tensile strength tester and contact angles were determined to assess the surface properties of the films. It was found that the Klucel ® MF films had better physicochemical properties than those of the LF films. Klucel ® MF as a film-forming polymer with lidocaine base and both excipients at 5 w/w% exhibited physicochemical properties and good workability. The excipients proved to exert strong effects on the physicochemical properties of the tested systems and it is very important to study them intensively in preformulation studies in the pharmaceutical technology in order to utilise their benefits and to avoid any disadvantageous effects. - Highlights: • Glycerol increases, whereas xylitol decreases the free volume of both LF and MF HPC. • Both xylitol and glycerol increase the tensile strength of MF films. • The tensile strength of the MF product makes it suitable for pharmaceutical use. • The surface properties reveal a macroscopically stable film structure. • All measurements indicate a macroscopically homogeneous film structure

Mechanical, barrier and morphological properties of starch nanocrystals-reinforced pea starch films.

Science.gov (United States)

Li, Xiaojing; Qiu, Chao; Ji, Na; Sun, Cuixia; Xiong, Liu; Sun, Qingjie

2015-05-05

To characterize the pea starch films reinforced with waxy maize starch nanocrystals, the mechanical, water vapor barrier and morphological properties of the composite films were investigated. The addition of starch nanocrystals increased the tensile strength of the composite films, and the value of tensile strength of the composite films was highest when starch nanocrystals content was 5% (w/w). The moisture content (%), water vapor permeability, and water-vapor transmission rate of the composite films significantly decreased as starch nanocrystals content increased. When their starch nanocrystals content was 1-5%, the starch nanocrystals dispersed homogeneously in the composite films, resulting in a relatively smooth and compact film surface and better thermal stability. However, when starch nanocrystals content was more than 7%, the starch nanocrystals began to aggregate, which resulted in the surface of the composite films developing a longitudinal fibrous structure. Copyright © 2014 Elsevier Ltd. All rights reserved.

Ocena przydatności kryteriów Williamsa w rozpoznawaniu atopowego zapalenia skóry w praktyce lekarza pediatry

Directory of Open Access Journals (Sweden)

Zbigniew Samochocki

2009-09-01

Full Text Available O trudnościach w rozpoznawaniu AZS u dzieci świadczy stosowanie wielu różnych metod diagnostycznych. Jedną z nich są kryteria zaproponowane przez Williamsa iwsp. Celem pracy było określenie przydatności kryteriów Williamsa iwsp. wrozpoznawaniu AZS u dzieci poprzez ocenę porównawczą z kryteriami Hanifina iRajki. Badaniami objęto 166 pacjentów Poradni Dermatologicznej (67 chłopców i 99 dziewczynek w wieku od 4 do 15 lat (średnio 10,3 roku, którzy niezależnie od zmian skórnych zgłaszali świąd skóry. Poddano ich badaniu klinicznemu i procedurom zawartym w kryteriach Hanifina i Rajki. Dokonano analizy statystycznej wyników. U 108 dzieci rozpoznano AZS, a u 58 – świerzb, łojotokowe zapalenie skóry, zapalenie skóry z podrażnienia, łuszczycę, trądzik młodzieńczy oraz pokrzywkę. U wszystkich chorych naAZS wykazano suchość skóry. Zajęcie typowych okolic podawane wwywiadzie, początek zmian skórnych <2. roku życia, czynne zmiany w przegubach i osobnicze obciążenie atopią obserwowano odpowiednio u 96,3% (104/108, 71,3% (77/108, 67,6% (73/108 i 64,3% (70/108 pacjentów. Wszystkie te cechy występowały statystycznie istotnie częściej (p<0,001 wporównaniu z grupą dzieci, u których nie rozpoznano wyprysku atopowego. Stosując kryteria Williamsa i wsp., u 3/108 chorych wykazano fałszywie ujemne wyniki, a u 2/58 – fałszywie dodatnie. Czułość i swoistość tej metody badawczej wynosiła odpowiednio 97,2% i 96,6%. Wnioski: 1. Kryteria diagnostyczne Williamsa i wsp. są bardzo pomocne w praktyce lekarza pediatry w rozpoznawaniu AZS u dzieci powyżej 3. roku życia. 2. Suchość skóry i potwierdzenie wwywiadzie obecności zmian wypryskowych o typowej lokalizacji są najbardziej przydatne w rozpoznawaniu AZS u dzieci. 3. W przypadkach wątpliwych rozszerzenie granicy wieku wystąpienia pierwszych zmian skórnych z 2 do 5 lat zwiększa wykrywalność choroby.

The characteristics and residual stress of aluminum nitride films grown by two-stage sputtering of mid-frequency power

International Nuclear Information System (INIS)

Lin, T.-C.; Cheng, H.-E.; Tang, S.-H.; Liu, W.-C.; Lee, Antony H.C.

2008-01-01

The [0 0 2] oriented aluminum nitride has a high surface acoustic wave speed and high mechanic-electron couple coefficient. It is a potential material for manufacturing piezoelectric devices in high frequency application. The AlN films deposited onto silicon substrates were fabricated by two-stage sputtering process with mid-frequency generator. The results showed that the film did not have well [0 0 2] preferred orientation at 1.0 and 1.5 kW, and exhibited a [0 0 2] preferred orientation at 2.0 kW. The adhesion was poor when the film had a high preferred orientation because the substrate was damaged by high energetic atoms bombardment. A two-stage growth method was investigated in order to get high [0 0 2] preferred orientation and good adhesion. A good performance was obtained at the first stage power of 1.5 kW and the second stage power of 2.0 kW. The film showed a tensile stress state when the film was deposited at 1.0 kW. In contrast, the stress state was changed to compressive when the films were grown at 2.0 kW. The two-stage growth could succeed not only to get a high [0 0 2] preferred orientation but also to develop a reducing global stress film

X-ray resonant magnetic reflectivity of stratified magnetic structures: Eigenwave formalism and application to a W/Fe/W trilayer

International Nuclear Information System (INIS)

Elzo, M.; Jal, E.; Bunau, O.; Grenier, S.; Joly, Y.; Ramos, A.Y.; Tolentino, H.C.N.; Tonnerre, J.M.; Jaouen, N.

2012-01-01

A formalism for the reflectivity of electromagnetic waves by magnetic materials is presented with an application. It is applied to retrieve the magnetic moment density along the depth of magnetic materials with arbitrary magnetic moment direction using matricial algebra, including roughness between layers. The reflectivity is derived following a classical description with Maxwell equations and a permittivity built from the quantum scattering amplitude. Approximations on the relative power of the Thomson scattering and the magnetic terms are trackable in order to evaluate the validity of the formalism case-by-case, from the optical light regime up to soft and hard X-rays. Eigenwaves are used throughout the whole formalism. In order to illustrate the methodology, we present an application to a W/Fe/W trilayer performed at the Fe L-edge, in the soft X-ray regime. - Highlights: → Magnetism at interfaces and in thin films is increasingly studied. → X-ray resonant magnetic reflectivity yields the in depth magnetization profile in thin films. → We present a formalism and methodology to study the data. → We illustrate the technique with an example.

Mo0.5W0.5S2 for Q-switched pulse generation in ytterbium-doped fiber laser

Science.gov (United States)

Wang, Junli; Chen, Lei; Dou, Chenxi; Yan, Haiting; Meng, Lingjie; Wei, Zhiyi

2018-06-01

In this work, we fabricate the Mo0.5W0.5S2 by microwave-assisted solvothermal method, and report the Q-switched Yb-doped fiber lasers (YDFL) using Mo0.5W0.5S2 polymer film and tapered fiber as the saturable absorbers (SAs). The modulation depth and saturable intensity of the film SA are 5.63% and 6.82 MW cm‑2. The shortest pulse duration and the maximum single pulse energy are 1.22 μs and 148.8 nJ for the film SA, 1.46 μs and 339 nJ for the fiber-taper SA. To the best of our knowledge, this is the first report on the Q-switched YDFL using Mo0.5W0.5S2 SAs.

Intensity dependence and transient dynamics of donor-acceptor pair recombination in ZnO thin films grown on (001) silicon

Science.gov (United States)

Guo, Bing; Qiu, Z. R.; Wong, K. S.

2003-04-01

We report room-temperature time-integrated and time-resolved photoluminescence (PL) measurements on a nominally undoped wurtzite ZnO thin film grown on (001) silicon. A linear and sublinear excitation intensity Iex dependence of the PL intensity were observed for the 379.48-nm exciton line and the weak broad green band (˜510 nm), respectively. The green luminescence was found to decay as hyperbolic t-1, and its peak energy was observed to increase nearly logarithmically with increased Iex. These results are in an excellent agreement with the tunnel-assisted donor-deep-acceptor pair (DAP) model so that its large blueshifts of about 25 meV per decade increase in Iex can be accounted for by the screening of the fluctuating impurity potential. Also, the 30-ps fast decay of the exciton emission was attributed to the rapid trapping of carriers at luminescent impurities, while the short lifetime of τ1/e=200 ps for the green luminescence may be due to an alternative trapping by deeper centers in the ZnO. Finally, singly ionized oxygen and zinc vacancies have been tentatively invoked to act as donor-deep-acceptor candidates for the DAP luminescence, respectively.

Critical unpairing currents in narrow niobium films

International Nuclear Information System (INIS)

Gershenzon, M.E.; Gubankov, V.N.

1979-01-01

Investigated are the dependences of critical currents of narrow ( with the width of W=0.5-15 μm) superconducting niobium films on temperature and a magnetic field. The proposed method of film production with the width of the 1μm order and with small edge inhomogeneities ((<=500 A) permitted to realize the Ginsburg-Landau unpairing currents in the wide range of temperatures. The correct comparison with the theory showed that the unpairing currents are observed if W(< or approximately) 2delta, where delta is the effective depth of the penetration of the perpendicular magnetic field

Dextrose modified flexible tasar and muga fibroin films for wound healing applications.

Science.gov (United States)

Srivastava, Chandra Mohan; Purwar, Roli; Gupta, Anuradha; Sharma, Deepak

2017-06-01

This paper is focused on preparation and characterization of regenerated muga and tasar fibroin flexible films from cocoon using ionic liquid. These flexible muga and tasar fibroin films were prepared by incorporating dextrose (5 to 15% w/w) as plasticizer. The mechanical, thermal, physical, morphological and biological properties of dextrose plasticized muga and tasar fibroin films were characterized. These plasticized films showed higher elongation at break as well as water holding capacity as compared to the un-plasticized films. The surface roughness and water absorbance capacity of the dextrose plasticized films were higher than un-plasticized films, which results in improved adherence and proliferation of L929 fibroblast cells. Gentamicin loaded plasticized muga and tasar fibroin films showed slightly higher rate of release as compared to un-plasticized films. The biodegradability of dextrose plasticized films was significantly higher as compared to their respective counterpart. The regeneration of flexible muga and tasar silk fibroin films pave the way to expand potential use of non-mulberry in the field of biomedical such as wound dressing. Copyright © 2017 Elsevier B.V. All rights reserved.

77 FR 37031 - Don W. Gilbert Hydro Power, LLC; Notice of Application Tendered for Filing With the Commission...

Science.gov (United States)

2012-06-20

... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Project No. 14367-001] Don W. Gilbert... No.: 14367-001. c. Date filed: May 30, 2012. d. Applicant: Don W. Gilbert Hydro Power, LLC. e. Name... Utility Regulatory Policies Act of 1978, 16 U.S.C. 2705, 2708.] h. Applicant Contact: Don W. Gilbert and...

Evolution of nanostructures of anatase TiO2 thin films grown on (001) LaAlO3

International Nuclear Information System (INIS)

Ciancio, Regina; Vittadini, Andrea; Selloni, Annabella; Arpaia, Riccardo; Aruta, Carmela; Miletto Granozio, Fabio; Scotti di Uccio, Umberto; Rossi, Giorgio; Carlino, Elvio

2013-01-01

Combining reflection high-energy electron diffraction, high-resolution transmission electron microscopy, and high-angle annular dark field scanning transmission electron microscopy we unveil the existence of a peculiar transition from a three-dimensional to a two-dimensional growth mode in anatase TiO 2 /LaAlO 3 heterostructures. Such a growth dynamics is accompanied by Al interdiffusion from substrate to the growing film up to a critical thickness of 20 nm. With the extra support of ab initio calculations, we show that the crossover between the two growth modes corresponds to the formation of two distinct regions characterized by (103)- and (101)-oriented crystallographic shear superstructures, occurring in the upmost film region and in proximity of the film/substrate interface, respectively.

First-principles study on half-metallic zinc-blende CrS and its (001) surface

Energy Technology Data Exchange (ETDEWEB)

Xu, Bin, E-mail: hnsqxb@163.com [Department of Mathematics and Information Sciences, North China university of Water Resources and Electric Power, Zhengzhou 450011 (China); Chen, Leiming [Zhengzhou Institute of Aeronautical Industry Management, Zhengzhou, 450015 (China)

2016-11-01

Half-metallic magnets with complete (100%) spin polarization have attracted growing interest due to the potential in spintronic applications. In this paper, we use the first-principles calculations to explain the seeming contradiction between the recent experimental ferromagnetism (Demper et al., 2012 [22]) and the previous theoretical antiferromagnetic ground state for half-metallic zinc-blende CrS, and the experimental ferromagnetism of zinc-blende CrS arises from the substrate effect. We also show that both Cr- and S-terminated (001) surfaces of CrS preserve the bulk half-metallicity. The calculated surface energy indicates that the S-terminated (001) surface is more stable than the Cr-terminated (001) surface within the whole effective Cr chemical potentials, and thus the S-terminated (001) surface is more likely than the Cr-terminated (001) surface when the CrS thin films are grown on ZnSe substrate.

Self-organized nano-structuring of CoO islands on Fe(001)

Science.gov (United States)

Brambilla, A.; Picone, A.; Giannotti, D.; Riva, M.; Bussetti, G.; Berti, G.; Calloni, A.; Finazzi, M.; Ciccacci, F.; Duò, L.

2016-01-01

The realization of nanometer-scale structures through bottom-up strategies can be accomplished by exploiting a buried network of dislocations. We show that, by following appropriate growth steps in ultra-high vacuum molecular beam epitaxy, it is possible to grow nano-structured films of CoO coupled to Fe(001) substrates, with tunable sizes (both the lateral size and the maximum height scale linearly with coverage). The growth mode is discussed in terms of the evolution of surface morphology and chemical interactions as a function of the CoO thickness. Scanning tunneling microscopy measurements reveal that square mounds of CoO with lateral dimensions of less than 25 nm and heights below 10 atomic layers are obtained by growing few-nanometers-thick CoO films on a pre-oxidized Fe(001) surface covered by an ultra-thin Co buffer layer. In the early stages of growth, a network of misfit dislocations develops, which works as a template for the CoO nano-structuring. From a chemical point of view, at variance with typical CoO/Fe interfaces, neither Fe segregation at the surface nor Fe oxidation at the buried interface are observed, as seen by Auger electron spectroscopy and X-ray Photoemission Spectroscopy, respectively.

Characterization of konjac glucomannan-ethyl cellulose film formation via microscopy.

Science.gov (United States)

Xiao, Man; Wan, Li; Corke, Harold; Yan, Wenli; Ni, Xuewen; Fang, Yapeng; Jiang, Fatang

2016-04-01

Konjac glucomannan-ethyl cellulose (KGM-EC, 7:3, w/w) blended film shows good mechanical and moisture resistance properties. To better understand the basis for the KGM-EC film formation, optical microscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and atomic force microscopy (AFM) were used to observe the formation of the film from emulsion. Optical microscopy images showed that EC oil droplets were homogeneously dispersed in KGM water phase without obviously coalescence throughout the entire drying process. SEM images showed the surface and cross-sectional structures of samples maintained continuous and homogeneous appearance from the emulsion to dried film. AFM images indicated that KGM molecules entangled EC molecules in the emulsion. Interactions between KGM and EC improved the stability of KGM-EC emulsion, and contributed to uniformed structures of film formation. Based on these output information, a schematic model was built to elucidate KGM-EC film-forming process. Copyright © 2015 Elsevier B.V. All rights reserved.