WorldWideScience

Sample records for voltage threshold lowering

  1. Lower Hearing Threshold by Noise

    Institute of Scientific and Technical Information of China (English)

    龙长才; 邵峰; 张燕萍; 秦佑国

    2004-01-01

    We demonstrate that noise can be a benefit factor that enables us to hear weaker signals. We measured the hearing thresholds of subjects for pure tone in different noise levels. The results show that pure tone thresholds with noise of some levels are lower than that without noise. The largest down-shift of the threshold by noise among the examined subjects is 5. 7dB, and the smallest is 1.7dB.

  2. Determining lower threshold concentrations for synergistic effects

    DEFF Research Database (Denmark)

    Bjergager, Maj-Britt Andersen; Dalhoff, Kristoffer; Kretschmann, Andreas;

    2017-01-01

    on synergistic interactions between the pyrethroid insecticide, alpha-cypermethrin, and one of the three azole fungicides prochloraz, propiconazole or epoxiconazole measured on Daphnia magna immobilization. Three different experimental setups were applied: A standard 48h acute toxicity test, an adapted 48h test.......7 fold higher than the horizontal assessments. Using passive dosing rather than dilution series or spiking did not lower the threshold significantly. Below the threshold for synergy, slight antagony could often be observed. This is most likely due to induction of enzymes active in metabolization of alpha...

  3. Effect of Threshold Voltage on Various CMOS Performance Parameter

    Directory of Open Access Journals (Sweden)

    Mr. Abhishek Verma

    2014-04-01

    Full Text Available SiO2, once thought of as the most precious element in the design of CMOS circuits has not lived up to the expectations of being the perfect gate oxide. Efforts have been made to replace it with High K oxides such as Lanthanum Oxide (La2O3, Hafnium Oxide (HfO2 and many more. This review covers the problems faced by the High K oxides, one of them being escalation in threshold voltage which results in increased power dissipation. The solution to the above stated problem is to reduce the threshold voltage by several techniques, also covered in the review. Effect of threshold voltage on leakage current and power and reliability of CMOS are also taken under consideration.

  4. Extracellular voltage threshold settings can be tuned for optimal encoding of movement and stimulus parameters

    Science.gov (United States)

    Oby, Emily R.; Perel, Sagi; Sadtler, Patrick T.; Ruff, Douglas A.; Mischel, Jessica L.; Montez, David F.; Cohen, Marlene R.; Batista, Aaron P.; Chase, Steven M.

    2016-06-01

    Objective. A traditional goal of neural recording with extracellular electrodes is to isolate action potential waveforms of an individual neuron. Recently, in brain-computer interfaces (BCIs), it has been recognized that threshold crossing events of the voltage waveform also convey rich information. To date, the threshold for detecting threshold crossings has been selected to preserve single-neuron isolation. However, the optimal threshold for single-neuron identification is not necessarily the optimal threshold for information extraction. Here we introduce a procedure to determine the best threshold for extracting information from extracellular recordings. We apply this procedure in two distinct contexts: the encoding of kinematic parameters from neural activity in primary motor cortex (M1), and visual stimulus parameters from neural activity in primary visual cortex (V1). Approach. We record extracellularly from multi-electrode arrays implanted in M1 or V1 in monkeys. Then, we systematically sweep the voltage detection threshold and quantify the information conveyed by the corresponding threshold crossings. Main Results. The optimal threshold depends on the desired information. In M1, velocity is optimally encoded at higher thresholds than speed; in both cases the optimal thresholds are lower than are typically used in BCI applications. In V1, information about the orientation of a visual stimulus is optimally encoded at higher thresholds than is visual contrast. A conceptual model explains these results as a consequence of cortical topography. Significance. How neural signals are processed impacts the information that can be extracted from them. Both the type and quality of information contained in threshold crossings depend on the threshold setting. There is more information available in these signals than is typically extracted. Adjusting the detection threshold to the parameter of interest in a BCI context should improve our ability to decode motor intent

  5. A study on threshold voltage stability of low operating voltage organic thin-film transistors

    Science.gov (United States)

    Padma, N.; Sen, Shaswati; Sawant, Shilpa N.; Tokas, R.

    2013-08-01

    A low operating voltage (<2 V) organic field-effect transistor (OFET) using phenylhexyltrichlorosilane (PTS) self-assembled monolayer (SAM) dielectric and copper phthalocyanine (CuPc) as semiconductor with improved mobility (0.035 cm2 V-1 s-1) and threshold voltage stability was demonstrated. This device showed better performance when compared to an OFET with octyltrichlorosilane (OTS-8) SAM dielectric. The improved mobility was attributed to the 2D growth mode of CuPc on PTS SAM because of surface energy matching between the two, whereas CuPc film on OTS-8 showed a 3D growth mode with larger grain boundary density. The higher threshold voltage stability of OFETs on PTS SAM was attributed to the efficient coverage and screening of trap centres at dielectric/semiconductor interface due to stronger intermolecular linking and formation of closely packed surface by the bulky phenyl end groups. Decrease in grain boundaries offered by 2D growth of CuPc for electron and hole trapping was also found to be another reason for improved threshold voltage stability. The results indicated that the nature of the end group of SAM dielectric, surface chemistry of dielectric and initial growth mode of semiconductors are all responsible for improvement in threshold voltage stability and enhanced performance of OFET.

  6. Subnanowatt carbon nanotube complementary logic enabled by threshold voltage control.

    Science.gov (United States)

    Geier, Michael L; Prabhumirashi, Pradyumna L; McMorrow, Julian J; Xu, Weichao; Seo, Jung-Woo T; Everaerts, Ken; Kim, Chris H; Marks, Tobin J; Hersam, Mark C

    2013-10-09

    In this Letter, we demonstrate thin-film single-walled carbon nanotube (SWCNT) complementary metal-oxide-semiconductor (CMOS) logic devices with subnanowatt static power consumption and full rail-to-rail voltage transfer characteristics as is required for logic gate cascading. These results are enabled by a local metal gate structure that achieves enhancement-mode p-type and n-type SWCNT thin-film transistors (TFTs) with widely separated and symmetric threshold voltages. These complementary SWCNT TFTs are integrated to demonstrate CMOS inverter, NAND, and NOR logic gates at supply voltages as low as 0.8 V with ideal rail-to-rail operation, subnanowatt static power consumption, high gain, and excellent noise immunity. This work provides a direct pathway for solution processable, large area, power efficient SWCNT advanced logic circuits and systems.

  7. Wide Operational Range Processor Power Delivery Design for Both Super-Threshold Voltage and Near-Threshold Voltage Computing

    Institute of Scientific and Technical Information of China (English)

    Xin He; Gui-Hai Yan; Yin-He Han; Xiao-Wei Li

    2016-01-01

    The load power range of modern processors is greatly enlarged because many advanced power management techniques are employed, such as dynamic voltage frequency scaling, Turbo Boosting, and near-threshold voltage (NTV) technologies. However, because the efficiency of power delivery varies greatly with different load conditions, conventional power delivery designs cannot maintain high efficiency over the entire voltage spectrum, and the gained power saving may be offset by power loss in power delivery. We propose SuperRange, a wide operational range power delivery unit. SuperRange complements the power delivery capability of on-chip voltage regulator and off-chip voltage regulator. On top of SuperRange, we analyze its power conversion characteristics and propose a voltage regulator (VR) aware power management algorithm. Moreover, as more and more cores have been integrated on a singe chip, multiple SuperRange units can serve as basic building blocks to build, in a highly scalable way, more powerful power delivery subsystem with larger power capacity. Experimental results show SuperRange unit offers 1x and 1.3x higher power conversion efficiency (PCE) than other two conventional power delivery schemes at NTV region and exhibits an average 70%PCE over entire operational range. It also exhibits superior resilience to power-constrained systems.

  8. Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Kuan-Hsien; Chou, Wu-Ching [Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Wu, Ming-Siou; Hung, Yi-Syuan; Sze, Simon M. [Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Hung, Pei-Hua; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Hsieh, Tien-Yu [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Yeh, Bo-Liang [Advanced Display Technology Research Center, AU Optronics, No. 1, Li-Hsin Rd. 2, Hsinchu Science Park, Hsinchu 30078, Taiwan (China)

    2014-03-31

    This Letter investigates abnormal channel width-dependent threshold voltage variation in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Unlike drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, the wider the channel, the larger the threshold voltage observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider channel devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast IV measurement is utilized to demonstrate the self-heating induced anomalous channel width-dependent threshold voltage variation.

  9. Threshold Lowered for Foreign Investment in Leasing Companies Lowered

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

      In the past, the lowest threshold for foreign investment in leasing companies was US$5million. Now there is no "special limitation" for that. The trans-corporations including General Electric are staring at the RMB 100 billion profits in China's leasing market.……

  10. Threshold Lowered for Foreign Investment in Leasing Companies Lowered

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    @@ In the past, the lowest threshold for foreign investment in leasing companies was US$5million. Now there is no "special limitation" for that. The trans-corporations including General Electric are staring at the RMB 100 billion profits in China's leasing market.

  11. New drain current model for nano-meter MOS transistors on-chip threshold voltage test

    NARCIS (Netherlands)

    Wan, Jinbo; Kerkhoff, Hans G.

    2015-01-01

    Traditional reliability tests use complicated equipment, like probe stations and semiconductor parameter analyzers, to measure changes in transistors' threshold voltages, which are both expensive and time consuming. This paper provides an idea to test the threshold voltage with existing low-to-moder

  12. Effect of Grain Size on the Threshold Voltage for Double-Gate Polycrystaline Silicon MOSFET

    Directory of Open Access Journals (Sweden)

    Alka Panwar

    2011-01-01

    Full Text Available The effect of grain size (D on the threshold voltage (Vth for double gate polycrystalline silicon MOSFET is investigated theoretically in terms of grain boundary trap states (NT. It is found that the threshold voltage (Vth increases non-linearly with increasing silicon-oxide thickness (tox for all values of grain size (D. However the threshold voltage is seen to have smaller values for same tox for the larger grains. This may be attributed to the reduction in the number of trap states in the depletion regions on either side of a grain boundary. Finally the dependence of threshold voltage (Vth on various parameters such as the doping concentration, interface trap state density and field penetration from drain to source are explored out. The results of these findings are in good agreement with those available in the literature. For large grain poly silicon MOSFET the threshold voltage is seen to approach the single crystal value.

  13. Line edge roughness induced threshold voltage variability in nano-scale FinFETs

    Science.gov (United States)

    Rathore, Rituraj Singh; Sharma, Rajneesh; Rana, Ashwani K.

    2017-03-01

    In aggressively scaled devices, the FinFET technology has become more prone to line edge roughness (LER) induced threshold voltage variability. As a result, nano scale FinFET structures face the problem of intrinsic statistical fluctuations in the threshold voltage. This paper describes the all LER induced variability of threshold voltage for 14 nm underlap FinFET using 3-D numerical simulations. It is concluded that percentage threshold voltage (VTH) fluctuations referenced with respect to rectangular FinFET can go up to 8.76%. This work has also investigated the impact of other sources of variability such as random dopant fluctuation, work function variation and oxide thickness variation on threshold voltage.

  14. High voltage threshold for stable operation in a dc electron gun

    Science.gov (United States)

    Yamamoto, Masahiro; Nishimori, Nobuyuki

    2016-07-01

    We report clear observation of a high voltage (HV) threshold for stable operation in a dc electron gun. The HV hold-off time without any discharge is longer than many hours for operation below the threshold, while it is roughly 10 min above the threshold. The HV threshold corresponds to the minimum voltage where discharge ceases. The threshold increases with the number of discharges during HV conditioning of the gun. Above the threshold, the amount of gas desorption per discharge increases linearly with the voltage difference from the threshold. The present experimental observations can be explained by an avalanche discharge model based on the interplay between electron stimulated desorption (ESD) from the anode surface and subsequent secondary electron emission from the cathode by the impact of ionic components of the ESD molecules or atoms.

  15. Determination of threshold and maximum operating electric stresses for selected high voltage insulation. Task 3: Investigation of high voltage capacitor insulation

    Science.gov (United States)

    Sosnowski, M.; Eager, G. S., Jr.

    1984-03-01

    The threshold voltage of capacitor insulation was investigated. The experimental work was performed on samples prepared from commercial polypropylene insulated, liquid-filled capacitors. The samples were vacuum-impregnated with the original capacitor insulating liquid obtained from the manufacturer. A limited number of full-size capacitor elements also were tested. Impulse voltage breakdown tests with dc voltage prestressing were performed at room temperature and 75 C. From the results of these tests, the threshold voltage of the samples of the capacitor insulation was determined at both temperatures and that of the whole capacitor elements at room temperature. The threshold voltage of the capacitor insulation was found to be approximately equal to the impulse breakdown voltage. No difference was found between the threshold voltage at room temperature and at 75 C. The threshold voltage of the whole capacitor elements at room temperature was found to be equal to approximately 80% of the threshold voltage of the capacitor insulation samples.

  16. Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs

    Science.gov (United States)

    Green, Ron; Lelis, Aivars; Habersat, Daniel

    2016-04-01

    This work reports on three important aspects of threshold-voltage instability in SiC power MOSFETs: (1) the threshold-voltage bias-temperature instability observed in commercial devices from two leading manufacturers, (2) a summary of the basic mechanisms driving this instability, and (3) the need for an improved test method for evaluating these devices. Even under significant overstress conditions, no negative threshold-voltage shift was observed in the most-recent-vintage commercial devices from one of the manufacturers during a -15 V, 175 °C negative-bias temperature stress lasting 120 h.

  17. Lower versus Higher Hemoglobin Threshold for Transfusion in Septic Shock

    DEFF Research Database (Denmark)

    Holst, Lars B; Haase, Nicolai; Wetterslev, Jørn;

    2014-01-01

    BACKGROUND: Blood transfusions are frequently given to patients with septic shock. However, the benefits and harms of different hemoglobin thresholds for transfusion have not been established. METHODS: In this multicenter, parallel-group trial, we randomly assigned patients in the intensive care...... unit (ICU) who had septic shock and a hemoglobin concentration of 9 g per deciliter or less to receive 1 unit of leukoreduced red cells when the hemoglobin level was 7 g per deciliter or less (lower threshold) or when the level was 9 g per deciliter or less (higher threshold) during the ICU stay...... were similar in the two intervention groups. CONCLUSIONS: Among patients with septic shock, mortality at 90 days and rates of ischemic events and use of life support were similar among those assigned to blood transfusion at a higher hemoglobin threshold and those assigned to blood transfusion...

  18. Threshold Voltage of MOSFET Devices Extracted by Normalized Mutual Integral Difference Operator

    Institute of Scientific and Technical Information of China (English)

    HEJin; ZHENGTaolei; ZHANGXing; WANGYangyuan

    2003-01-01

    The threshold voltage of MOSFETs to be extracted by a novel experimental method named the nor-realized mutual integral difference operator has been inves-tigated in this paper. The basic principle of this method is to use the extreme spectral characteristics of the nor-realized mutual integral difference result of the MOSFET transfer characteristics to find the threshold voltage. Ap-plication of this method has also been demonstrated nu-merically in extracting the threshold voltage of MOS de-vices with the different effective channel length and par-asitic series resistance. The results show this method is sensitive to the channel length variation while insensitive to the parasitic resistance component. The extracted re-sults on the threshold voltage of MOSFET devices have been compared with those obtained by the second deriva-tive method and the agreements have been found, showing the advantage of the method presented here.

  19. Voltage threshold behaviors of ZnO nanorod doped liquid crystal cell

    Institute of Scientific and Technical Information of China (English)

    Guo Yubing; Chen Yonghai; Xiang Ying; and Qu Shengchun

    2011-01-01

    With ZnO nanorods doped in only one poly (vinyl alcohol) (PVA) layer,we observed different threshold voltages with reverse DC voltages for a liquid crystal cell.The length and diameter of the ZnO nanorod used in our experiment were about 180 nm and 20 nm,respectively.When the PVA layer on the anodic side was doped,the threshold voltage was larger than that of the pure cell; conversely,when the PVA layer on the cathodic side was doped,the threshold voltage was smaller than that of the pure cell.These results can be explained by the internal electric field model.We also observed a resonance phenomenon with a low frequency AC voltage.

  20. Lower Bound on Weights of Large Degree Threshold Functions

    CERN Document Server

    Podolskii, Vladimir V

    2012-01-01

    An integer polynomial $p$ of $n$ variables is called a \\emph{threshold gate} for the Boolean function $f$ of $n$ variables if for all $x \\in \\{0,1\\}^n$ $f(x)=1$ if and only if $p(x)\\geq 0$. The \\emph{weight} of a threshold gate is the sum of its absolute values. In this paper we study how large weight might be needed if we fix some function and some threshold degree. We prove $2^{\\Omega(2^{2n/5})}$ lower bound on this value. The best previous bound was $2^{\\Omega(2^{n/8})}$ (Podolskii, 2009). In addition we present substantially simpler proof of the weaker $2^{\\Omega(2^{n/4})}$ lower bound. This proof is conceptually similar to other proofs of the bounds on weights of nonlinear threshold gates, but avoids a lot of technical details arising in other proofs. We hope that this proof will help to show the ideas behind the construction used to prove these lower bounds.

  1. An AMOLED AC-Biased Pixel Design Compensating the Threshold Voltage and I-R Drop

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2011-01-01

    Full Text Available We propose a novel pixel design and an AC bias driving method for active-matrix organic light-emitting diode (AM-OLED displays using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs. The proposed threshold voltage and I-R drop compensation circuit, which comprised three transistors and one capacitor, have been verified to supply uniform output current by simulation work using the Automatic Integrated Circuit Modeling Simulation Program with Integrated Circuit Emphasis (AIM-SPICE simulator. The simulated results demonstrate excellent properties such as low error rate of OLED anode voltage variation (<0.7% and low voltage drop of VDD power line. The proposed pixel circuit effectively enables threshold-voltage-deviation correction of driving TFT and compensates for the voltage drop of VDD power line using AC bias on OLED cathode.

  2. Investigation of Threshold Voltage Variability at High Temperature Using Takeuchi Plot

    Science.gov (United States)

    Tsunomura, Takaaki; Nishida, Akio; Hiramoto, Toshiro

    2010-05-01

    The property of metal-oxide-semiconductor field-effect transistors' (MOSFETs) threshold voltage (VT) variability at high temperature is investigated by evaluating the device matrix array test element group (DMA-TEG). It is revealed that VT variation is lower at high temperature than at room temperature, and that VT at high temperature has a strong correlation with VT at room temperature. The normal property of VT variability both at room and high temperatures is validated using the normal probability plot. The decrease in VT variation at high temperature stems from the reduction of the channel depletion layer width (Wdep). The temperature dependence of VT variation is evaluated using the Takeuchi plot, the VT variation normalization method. It is revealed that the change in BVT, the parameter of VT variation in the Takeuchi plot, is very small with varying temperature.

  3. Towards a threshold climate for emergency lower respiratory hospital admissions.

    Science.gov (United States)

    Islam, Muhammad Saiful; Chaussalet, Thierry J; Koizumi, Naoru

    2017-02-01

    Identification of 'cut-points' or thresholds of climate factors would play a crucial role in alerting risks of climate change and providing guidance to policymakers. This study investigated a 'Climate Threshold' for emergency hospital admissions of chronic lower respiratory diseases by using a distributed lag non-linear model (DLNM). We analysed a unique longitudinal dataset (10 years, 2000-2009) on emergency hospital admissions, climate, and pollution factors for the Greater London. Our study extends existing work on this topic by considering non-linearity, lag effects between climate factors and disease exposure within the DLNM model considering B-spline as smoothing technique. The final model also considered natural cubic splines of time since exposure and 'day of the week' as confounding factors. The results of DLNM indicated a significant improvement in model fitting compared to a typical GLM model. The final model identified the thresholds of several climate factors including: high temperature (≥27°C), low relative humidity (≤ 40%), high Pm10 level (≥70-µg/m(3)), low wind speed (≤ 2 knots) and high rainfall (≥30mm). Beyond the threshold values, a significantly higher number of emergency admissions due to lower respiratory problems would be expected within the following 2-3 days after the climate shift in the Greater London. The approach will be useful to initiate 'region and disease specific' climate mitigation plans. It will help identify spatial hot spots and the most sensitive areas and population due to climate change, and will eventually lead towards a diversified health warning system tailored to specific climate zones and populations. Copyright © 2016 Elsevier Inc. All rights reserved.

  4. Analytical modeling of threshold voltage for Cylindrical Gate All Around (CGAA MOSFET using center potential

    Directory of Open Access Journals (Sweden)

    K.P. Pradhan

    2015-12-01

    Full Text Available In this paper, an analytical threshold voltage model is proposed for a cylindrical gate-all-around (CGAA MOSFET by solving the 2-D Poisson’s equation in the cylindrical coordinate system. A comparison is made for both the center and the surface potential model of CGAA MOSFET. This paper claims that the calculation of threshold voltage using center potential is more accurate rather than the calculation from surface potential. The effects of the device parameters like the drain bias (VDS, oxide thickness (tox, channel thickness (r, etc., on the threshold voltage are also studied in this paper. The model is verified with 3D numerical device simulator Sentaurus from Synopsys Inc.

  5. A threshold voltage model for high-κgate-dielectric MOSFETs considering fringing-field effect

    Institute of Scientific and Technical Information of China (English)

    Ji Feng; Xu Jing-Ping; Lai Pui-To

    2007-01-01

    In this paper, a threshold voltage model for high-κgate-dielectric metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed, with more accurate boundary conditions of the gate dielectric derived through a conformal mapping transformation method to consider the fringing-field effects including the influences of high-κgate-dielectric and sidewall spacer. Comparing with similar models, the proposed model can be applied to general situations where the gate dielectric and sidewall spacer can have different dielectric constants. The influences of sidewall spacer and high-κgate dielectric on fringing field distribution of the gate dielectric and thus threshold voltage behaviours of a MOSFET are discussed in detail.

  6. Lowering the threshold for the diagnosis of gestational diabetes.

    Science.gov (United States)

    Rust, O A; Bofill, J A; Andrew, M E; Kincaid, T A; Stubbs, T M; Miller, E H; Morrison, J C

    1996-10-01

    Our purpose was to determine whether lowering the diagnostic threshold for gestational diabetes mellitus on 3-hour 100 gm oral glucose tolerance testing will select a population at risk for adverse perinatal outcome. In this retrospective study 434 patients with an abnormal 50 gm glucose screen result (> or = 140 mg/dl) underwent a standardized 3-hour oral glucose tolerance test. The results were stratified according to maternal weight and the criteria recommended by Sacks or Carpenter. Birth weight and rate of macrosomia were the primary perinatal outcome variables analyzed. Analysis of the data set stratified according to the Sacks criteria revealed results very similar to the Carpenter criteria data set. Patients who would have been newly diagnosed with gestational diabetes mellitus only if the lowered criteria were used (group 2) were older and heavier. No other variable comparisons achieved statistical significance. When the same patients were stratified according to prepregnancy weight, overweight patients were older, gained less weight during the third trimester, underwent cesarean section more often, and had higher cumulative maternal morbidity. Regression analysis showed that the degree of hyperglycemia did not predict macrosomia or influence birth weight, but prepregnant maternal body mass index was associated with macrosomia. Fetal macrosomia is influenced by maternal prepregnant body mass index. Lowering the glucose tolerance test threshold would result in overdiagnosis of gestational diabetes mellitus without improving perinatal outcome.

  7. Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

    Science.gov (United States)

    Wang, Qingpeng; Jiang, Ying; Miyashita, Takahiro; Motoyama, Shin-ichi; Li, Liuan; Wang, Dejun; Ohno, Yasuo; Ao, Jin-Ping

    2014-09-01

    GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) with recessed gate on AlGaN/GaN heterostructure are reported in which the drain and source ohmic contacts were fabricated on the AlGaN/GaN heterostructure and the electron channel was formed on the GaN buffer layer by removing the AlGaN barrier layer. Negative threshold voltages were commonly observed in all devices. To investigate the reasons of the negative threshold voltages, different oxide thickness, etching gas and bias power of inductively-coupled plasma (ICP) system were utilized in the fabrication process of the GaN MOSFETs. It is found that positive charges of around 1 × 1012 q/cm2 exist near the interface at the just threshold condition in both silane- and tetraethylorthosilicate (TEOS)-based devices. It is also found that the threshold voltages do not obviously change with the different etching gas (SiCl4, BCl3 and two-step etching of SiCl4/Cl2) at the same ICP bias power level (20-25 W) and will become deeper when higher bias power is used in the dry recess process which may be related to the much serious ion bombardment damage. Furthermore, X-ray photoelectron spectroscopy (XPS) experiments were done to investigate the surface conditions. It is found that N 1s peaks become lower with higher bias power of the dry etching process. Also, silicon contamination was found and could be removed by HNO3/HF solution. It indicates that the nitrogen vacancies are mainly responsible for the negative threshold voltages rather than the silicon contamination. It demonstrates that optimization of the ICP recess conditions and improvement of the surface condition are still necessary to realize enhancement-mode GaN MOSFETs on AlGaN/GaN heterostructure.

  8. A patch in the pectoral position lowers defibrillation threshold.

    Science.gov (United States)

    Karasik, P; Solomon, A; Verdino, R; Moore, H; Rodak, D; Hannan, R; Fletcher, R

    1997-06-01

    Implantable pacemaker cardioverter defibrillators are now available with biphasic waveforms, which have been shown to markedly improve defibrillation thresholds (DFTs). However, in a number of patients the DFT remains high. Also, DFT may increase after implantation, especially if antiarrhythmic drugs are added. We report on the use of a subcutaneous patch in the pectoral position in 15 patients receiving a transvenous defibrillator as a method of easily reducing the DFT. A 660-mm2 patch electrode was placed beneath the generator in a pocket created on the pectoral fascia. The energy required for defibrillation was lowered by 56% on average, and the system impedance was lowered by a mean of 25%. This maneuver allowed all patients to undergo a successful implant with adequate safety margin.

  9. Organic thin film devices with stabilized threshold voltage and mobility, and method for preparing the devices

    Science.gov (United States)

    Nastasi, Michael Anthony; Wang, Yongqiang; Fraboni, Beatrice; Cosseddu, Piero; Bonfiglio, Annalisa

    2013-06-11

    Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (.mu.) and threshold voltage (VT), a decrease in contact resistance R.sub.C, and an extended operational lifetime that did not degrade after 2000 hours of operation in the air.

  10. Interface Engineering for Precise Threshold Voltage Control in Multilayer-Channel Thin Film Transistors

    KAUST Repository

    Park, Jihoon

    2016-11-29

    Multilayer channel structure is used to effectively manipulate the threshold voltage of zinc oxide transistors without degrading its field-effect mobility. Transistors operating in enhancement mode with good mobility are fabricated by optimizing the structure of the multilayer channel. The optimization is attributed to the formation of additional channel and suppression of the diffusion of absorbed water molecules and oxygen vacancies.

  11. Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors

    NARCIS (Netherlands)

    Mathijssen, Simon G. J.; Colle, Michael; Gomes, Henrique; Smits, Edsger C. P.; de Boer, Bert; McCulloch, Iain; Bobbert, Peter A.; de Leeuw, Dago M.; Cölle, Michael

    2007-01-01

    The electrical instability of organic field-effect transistors is investigated. We observe that the threshold-voltage shift (see figure) shows a stretched-exponential time dependence under an applied gate bias. The activation energy of 0.6 eV is common for our and all other organic transistors repor

  12. Near-Threshold Computing and Minimum Supply Voltage of Single-Rail MCML Circuits

    Directory of Open Access Journals (Sweden)

    Ruiping Cao

    2014-01-01

    Full Text Available In high-speed applications, MOS current mode logic (MCML is a good alternative. Scaling down supply voltage of the MCML circuits can achieve low power-delay product (PDP. However, the current almost all MCML circuits are realized with dual-rail scheme, where the NMOS configuration in series limits the minimum supply voltage. In this paper, single-rail MCML (SRMCML circuits are described, which can avoid the devices configuration in series, since their logic evaluation block can be realized by only using MOS devices in parallel. The relationship between the minimum supply voltage of the SRMCML circuits and the model parameters of MOS transistors is derived, so that the minimum supply voltage can be estimated before circuit designs. An MCML dynamic flop-flop based on SRMCML is also proposed. The optimization algorithm for near-threshold sequential circuits is presented. A near-threshold SRMCML mode-10 counter based on the optimization algorithm is verified. Scaling down the supply voltage of the SRMCML circuits is also investigated. The power dissipation, delay, and power-delay products of these circuits are carried out. The results show that the near-threshold SRMCML circuits can obtain low delay and small power-delay product.

  13. Modulation of voltage-gated sodium channels hyperpolarizes the voltage threshold for activation in spinal motoneurones.

    Science.gov (United States)

    Power, Kevin E; Carlin, Kevin P; Fedirchuk, Brent

    2012-03-01

    Previous work has shown that motoneurone excitability is enhanced by a hyperpolarization of the membrane potential at which an action potential is initiated (V(th)) at the onset, and throughout brainstem-evoked fictive locomotion in the adult decerebrate cat and neonatal rat. Modeling work has suggested the modulation of Na(+) conductance as a putative mechanism underlying this state-dependent change in excitability. This study sought to determine whether modulation of voltage-gated sodium channels could induce V(th) hyperpolarization. Whole-cell patch-clamp recordings were made from antidromically identified lumbar spinal motoneurones in an isolated neonatal rat spinal cord preparation. Recordings were made with and without the bath application of veratridine, a plant alkaloid neurotoxin that acts as a sodium channel modulator. As seen in HEK 293 cells expressing Nav1.2 channels, veratridine-modified channels demonstrated a hyperpolarizing shift in their voltage-dependence of activation and a slowing of inactivation that resulted in an enhanced inward current in response to voltage ramp stimulations. In the native rat motoneurones, veratridine-modified sodium channels induced a hyperpolarization of V(th) in all 29 neonatal rat motoneurones examined (mean hyperpolarization: -6.6 ± 4.3 mV). V(th) hyperpolarization was not due to the effects on Ca(2+) and/or K(+) channels as blockade of these currents did not alter V(th). Veratridine also significantly increased the amplitude of persistent inward currents (PICs; mean increase: 72.5 ± 98.5 pA) evoked in response to slow depolarizing current ramps. However, the enhancement of the PIC amplitude had a slower time course than the hyperpolarization of V(th), and the PIC onset voltage could be either depolarized or hyperpolarized, suggesting that PIC facilitation did not mediate the V(th) hyperpolarization. We therefore suggest that central neuronal circuitry in mammals could affect V(th) in a mechanism similar to that of

  14. Analytical model of threshold voltage degradation due to localized charges in gate material engineered Schottky barrier cylindrical GAA MOSFETs

    Science.gov (United States)

    Kumar, Manoj; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.

    2016-10-01

    The threshold voltage degradation due to the hot carrier induced localized charges (LC) is a major reliability concern for nanoscale Schottky barrier (SB) cylindrical gate all around (GAA) metal-oxide-semiconductor field-effect transistors (MOSFETs). The degradation physics of gate material engineered (GME)-SB-GAA MOSFETs due to LC is still unexplored. An explicit threshold voltage degradation model for GME-SB-GAA-MOSFETs with the incorporation of localized charges (N it) is developed. To accurately model the threshold voltage the minimum channel carrier density has been taken into account. The model renders how +/- LC affects the device subthreshold performance. One-dimensional (1D) Poisson’s and 2D Laplace equations have been solved for two different regions (fresh and damaged) with two different gate metal work-functions. LCs are considered at the drain side with low gate metal work-function as N it is more vulnerable towards the drain. For the reduction of carrier mobility degradation, a lightly doped channel has been considered. The proposed model also includes the effect of barrier height lowering at the metal-semiconductor interface. The developed model results have been verified using numerical simulation data obtained by the ATLAS-3D device simulator and excellent agreement is observed between analytical and simulation results.

  15. Elimination of the channel current effect on the characterization of MOSFET threshold voltage using junction capacitance measurements

    Science.gov (United States)

    Tomaszewski, Daniel; Głuszko, Grzegorz; Łukasiak, Lidia; Kucharski, Krzysztof; Malesińska, Jolanta

    2017-02-01

    An alternative method for an extraction of the MOSFET threshold voltage has been proposed. It is based on an analysis of the MOSFET source-bulk junction capacitance behavior as a function of the gate-source voltage. The effect of the channel current on the threshold voltage extraction is fully eliminated. For the threshold voltage and junction capacitance model parameters non-iterative methods have been used. The proposed method has been demonstrated using a series of MOS transistors manufactured using a standard CMOS technology.

  16. Quasi-3D modeling of surface potential and threshold voltage of Triple Metal Quadruple Gate MOSFETs

    Science.gov (United States)

    Gupta, Santosh Kumar; Shah, Mihir Kumar P.

    2017-01-01

    In this paper we present electrostatic model of 3D Triple Metal Quadruple Gate (TMQG) MOSFET of rectangular cross-section based on quasi-3D method. The analytical equations for channel potential and characteristic length have been derived by decomposing TMQG into two 2D perpendicular cross-sections (triple metal double gate, TMDG) and the effective characteristic length of TMQG is found using equivalent number of gates (ENG) method. For each of the TMDG, 2D Poisson's equation is solved by parabolic approximation and proper boundary conditions to calculate channel potential. The threshold voltage expression is developed using inversion carrier charge sheet density method. The developed models for channel potential and threshold voltage are validated using numerical simulations of TMQG. The developed model provides the design guidelines for TMQG with improved HCEs and SCEs.

  17. New analytical threshold voltage model for halo-doped cylindrical surrounding-gate MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Li Cong; Zhuang Yiqi; Han Ru, E-mail: cong.li@mail.xidan.edu.cn [Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2011-07-15

    Using an exact solution of two-dimensional Poisson's equation in cylindrical coordinates, a new analytical model comprising electrostatic potential, electric field, threshold voltage and subthreshold current for halo-doped surrounding-gate MOSFETs is developed. It is found that a new analytical model exhibits higher accuracy than that based on parabolic potential approximation when the thickness of the silicon channel is much larger than that of the oxide. It is also revealed that moderate halo doping concentration, thin gate oxide thickness and small silicon channel radius are needed to improve the threshold voltage characteristics. The derived analytical model agrees well with a three-dimensional numerical device simulator ISE. (semiconductor devices)

  18. Threshold-voltage modulated phase change heterojunction for application of high density memory

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Baihan; Tong, Hao, E-mail: tonghao@hust.edu.cn; Qian, Hang; Miao, Xiangshui [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2015-09-28

    Phase change random access memory is one of the most important candidates for the next generation non-volatile memory technology. However, the ability to reduce its memory size is compromised by the fundamental limitations inherent in the CMOS technology. While 0T1R configuration without any additional access transistor shows great advantages in improving the storage density, the leakage current and small operation window limit its application in large-scale arrays. In this work, phase change heterojunction based on GeTe and n-Si is fabricated to address those problems. The relationship between threshold voltage and doping concentration is investigated, and energy band diagrams and X-ray photoelectron spectroscopy measurements are provided to explain the results. The threshold voltage is modulated to provide a large operational window based on this relationship. The switching performance of the heterojunction is also tested, showing a good reverse characteristic, which could effectively decrease the leakage current. Furthermore, a reliable read-write-erase function is achieved during the tests. Phase change heterojunction is proposed for high-density memory, showing some notable advantages, such as modulated threshold voltage, large operational window, and low leakage current.

  19. A Doping Dependent Threshold Voltage Model of Uniformly Doped Short-Channel Symmetric Double-Gate (DG MOSFET’s

    Directory of Open Access Journals (Sweden)

    P.K. Tiwari

    2011-01-01

    Full Text Available The paper presents a doping dependent threshold voltage model for the short-channel double-gate (DG MOSFETs. The channel potential has been determined by solving the two-dimensional (2D Poisson’s equation using the parabolic potential approximation in the vertical direction of channel. Threshold voltage sensitivity on acceptor doping and device parameters is discussed in detail. The threshold voltage expression has been modified by incorporating the effects of band gap narrowing for highly doped DG MOSFETs. Quantum mechanical corrections have also been employed in the threshold voltage model. The theoretical results have been compared with the ATLASTM simulation results. The present model is found to be valid for acceptor doping variation from 1014 cm–3 to 5 × 1018cm–3.

  20. A 2-D Analytical Threshold Voltage Model for Symmetric Double Gate MOSFET's Using Green’s Function

    Directory of Open Access Journals (Sweden)

    Anoop Garg

    2011-01-01

    Full Text Available We propose a new two dimensional (2D analytical solution of Threshold Voltage for undoped (or lightly doped Double Gate MOSFETs. We have used Green’s function technique to solve the 2D Poisson equation, and derived the threshold voltage model using minimum surface potential concept. This model is assumed uniform doping profile in Si region. The proposed model compared with existing literature and experimental data and we obtain excellent agreements with previous techniques.

  1. An accurate, analytical, and technology-mapped definition of the surface potential at threshold and a new postulate for the threshold voltage of MOSFETs

    Science.gov (United States)

    Sarkar, Vaskar; Dutta, Aloke K.

    2006-11-01

    A novel approach of defining the threshold voltage for long channel MOSFETs has been presented in this paper, where it has been proposed that it corresponds to the gate-to-source voltage for which the drift and diffusion components of the total drain current become equal to each other. In order to avoid the greater computation time associated with the numerical solution of these two components, an analytical expression of the surface potential, corresponding to the threshold condition, is given here, which has the same functional form as the one proposed by Tsividis. The fuzzy parameter n, appearing in this expression of the surface potential, is expressed as a function of the substrate doping density ( NA) and the oxide thickness ( tox). The threshold voltage values, obtained analytically from the relation between the surface potential at the threshold condition and the closed-form technology-mapped expression of the fuzzy parameter n, show an excellent match with those obtained from SILVACO simulations for a wide range of NA and tox, with the maximum error being only about 4%. The comparison of the percent error values of the threshold voltage obtained from this proposed model with those obtained from the other two recently proposed methods, all with respect to SILVACO simulation results, further verifies the validity of our completely analytical, mathematically simple, and straight-forward approach, proposed in this work here.

  2. Nocturnal lowering of thresholds for sweating and vasodilation

    Science.gov (United States)

    Wenger, C. B.; Roberts, M. F.; Stolwijk, J. A. J.; Nadel, E. R.

    1976-01-01

    The effect of the time of day on the relation of the heat-dissipating responses (sweating and vasodilation) to esophageal and mean skin temperatures was investigated. These parameters were measured in six subjects exercised at 60-70% of maximal aerobic power in a 25 deg C ambient. Results indicate that a circadian rhythm in the thresholds for sweating and vasodilation can account for much of the rhythm of internal body temperature. The circadian rhythm in the operation of the thermoregulatory system seems to be expressed through a reference point shared by vasomotor and sudomotor controls.

  3. Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability

    Energy Technology Data Exchange (ETDEWEB)

    Chiou, Uio-Pu; Pan, Fu-Ming, E-mail: fmpan@faculty.nctu.edu.tw [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China); Shieh, Jia-Min, E-mail: jmshieh@narlabs.org.tw, E-mail: jmshieh@faculty.nctu.edu.tw [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China); Yang, Chih-Chao [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Huang, Wen-Hsien [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China); National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Kao, Yo-Tsung [Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China)

    2013-11-11

    We fabricated nano-crystalline Si (nc-Si:H) thin-film transistors (TFTs) with a double-metal-gate structure, which showed a high electron-mobility (μ{sub FE}) and adjustable threshold voltages (V{sub th}). The nc-Si:H channel and source/drain (S/D) of the multilayered TFT were deposited at 375 °C by inductively coupled plasma chemical vapor deposition. The low grain-boundary defect density of the channel layer is responsible for the high μ{sub FE} of 370 cm{sup 2}/V-s, a steep subthreshold slope of 90 mV/decade, and a low V{sub th} of −0.64 V. When biased with the double-gate driving mode, the device shows a tunable V{sub th} value extending from −1 V up to 2.7 V.

  4. Effect of single walled carbon nanotubes on the threshold voltage of dye based photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    Chakraborty, S.; Manik, N.B., E-mail: nb_manik@yahoo.co.in

    2016-01-15

    Carbon nanotubes are being widely used in organic photovoltaic (OPV) devices as their usage has been reported to enhance the device efficiency along with other related parameters. In this work we have studied the energy (E{sub c}) effect of single walled carbon nanotubes (SWCNT) on the threshold voltage (V{sub th}) and also on the trap states of dye based photovoltaic devices. SWCNT is added in a series of dyes such as Rose Bengal (RB), Methyl Red (MR), Malachite Green (MG) and Crystal Violet (CV). By analysing the steady state dark current–voltage (I–V) characteristics V{sub th} and E{sub c} is estimated for the different devices with and without addition of SWCNT. It is observed that on an average for all the dyes V{sub th} is reduced by about 30% in presence of SWCNT. The trap energy E{sub c} also reduces in case of all the dyes. The relation between V{sub th}, E{sub c} and total trap density is discussed. From the photovoltaic measurements it is seen that the different photovoltaic parameters change with addition of SWCNT to the dye based devices. Both the short circuit current density and fill factor are found to increase for all the dye based devices in presence of SWCNT.

  5. Threshold voltage manipulation of ZnO-graphene oxide hybrid thin film transistors via Au nanoparticles doping

    Science.gov (United States)

    Song, Wooseok; Kim, Ki Woong; Kim, Seong Jun; Min, Bok Ki; Rang Lim, Yi; Myung, Sung; Lee, Sun Sook; Lim, Jongsun; An, Ki-Seok

    2015-12-01

    In order to fabricate a complementary inverter, precise control of the threshold voltages for n-type semiconductor based thin film transistors (TFTs) is highly required. Here we provided a facile methodology for controlling the threshold voltage of ZnO-based TFTs. Chemically-derived graphene oxide (GO) and Au-decorated GO (Au-GO) flakes were hybridized with solution-processed ZnO thin films to control electron injection determined by the workfunction difference between ZnO and GO or Au-GO. As a result, the threshold voltages for the ZnO, GO/ZnO, and Au-GO/ZnO TFTs were 24 ± 3 V, -11 ± 4 V, and 63 ± 5 V, respectively, which determine depletion or enhancement mode TFTs without any significant change in the field effect mobility and on/off ratio.

  6. Remarkable reduction in the threshold voltage of pentacene-based thin film transistors with pentacene/CuPc sandwich configuration

    Directory of Open Access Journals (Sweden)

    Yi Li

    2014-06-01

    Full Text Available This study investigates the remarkable reduction in the threshold voltage (VT of pentacene-based thin film transistors with pentacene/copper phthalocyanine (CuPc sandwich configuration. This reduction is accompanied by increased mobility and lowered sub-threshold slope (S. Sandwich devices coated with a 5 nm layer of CuPc layer are compared with conventional top-contact devices, and results indicate that VT decreased significantly from −20.4 V to −0.2 V, that mobility increased from 0.18 cm2/Vs to 0.51 cm2/Vs, and that S was reduced from 4.1 V/dec to 2.9 V/dec. However, the on/off current ratio remains at 105. This enhanced performance could be attributed to the reduction in charge trap density by the incorporated CuPc layer. Results suggest that this method is simple and effectively generates pentacene-based organic thin film transistors with high mobility and low VT.

  7. Threshold-Voltage-Shift Compensation and Suppression Method Using Hydrogenated Amorphous Silicon Thin-Film Transistors for Large Active Matrix Organic Light-Emitting Diode Displays

    Science.gov (United States)

    Oh, Kyonghwan; Kwon, Oh-Kyong

    2012-03-01

    A threshold-voltage-shift compensation and suppression method for active matrix organic light-emitting diode (AMOLED) displays fabricated using a hydrogenated amorphous silicon thin-film transistor (TFT) backplane is proposed. The proposed method compensates for the threshold voltage variation of TFTs due to different threshold voltage shifts during emission time and extends the lifetime of the AMOLED panel. Measurement results show that the error range of emission current is from -1.1 to +1.7% when the threshold voltage of TFTs varies from 1.2 to 3.0 V.

  8. Anomalous Threshold Voltage Variability of Nitride Based Charge Storage Nonvolatile Memory Devices

    Directory of Open Access Journals (Sweden)

    Meng Chuan Lee

    2013-01-01

    Full Text Available Conventional technology scaling is implemented to meet the insatiable demand of high memory density and low cost per bit of charge storage nonvolatile memory (NVM devices. In this study, effect of technology scaling to anomalous threshold voltage ( variability is investigated thoroughly on postcycled and baked nitride based charge storage NVM devices. After long annealing bake of high temperature, cell’s variability of each subsequent bake increases within stable distribution and found exacerbate by technology scaling. Apparent activation energy of this anomalous variability was derived through Arrhenius plots. Apparent activation energy (Eaa of this anomalous variability is 0.67 eV at sub-40 nm devices which is a reduction of approximately 2 times from 110 nm devices. Technology scaling clearly aggravates this anomalous variability, and this poses reliability challenges to applications that demand strict control, for example, reference cells that govern fundamental program, erase, and verify operations of NVM devices. Based on critical evidence, this anomalous variability is attributed to lateral displacement of trapped charges in nitride storage layer. Reliability implications of this study are elucidated. Moreover, potential mitigation methods are proposed to complement technology scaling to prolong the front-runner role of nitride based charge storage NVM in semiconductor flash memory market.

  9. Analysis and modeling of zero-threshold voltage native devices with industry standard BSIM6 model

    Science.gov (United States)

    Gupta, Chetan; Agarwal, Harshit; Lin, Y. K.; Ito, Akira; Hu, Chenming; Singh Chauhan, Yogesh

    2017-04-01

    In this paper, we present the modeling of zero-threshold voltage (V TH) bulk MOSFET, also called native devices, using enhanced BSIM6 model. Devices under study show abnormally high leakage current in weak inversion, leading to degraded subthreshold slope. The reasons for such abnormal behavior are identified using technology computer-aided design (TCAD) simulations. Since the zero-V TH transistors have quite low doping, the depletion layer from drain may extend upto the source (at some non-zero value of V DS) which leads to punch-through phenomenon. This source–drain leakage current adds with the main channel current, causing the unexpected current characteristics in these devices. TCAD simulations show that, as we increase the channel length (L eff) and channel doping (N SUB), the source–drain leakage due to punch-through decreases. We propose a model to capture the source–drain leakage in these devices. The model incorporates gate, drain, body biases and channel length as well as channel doping dependency too. The proposed model is validated with the measured data of production level device over various conditions of biases and channel lengths.

  10. The low threshold voltage n-type silicon transistors based on a polymer/silica nanocomposite gate dielectric: The effect of annealing temperatures on their operation

    Science.gov (United States)

    Hashemi, Adeleh; Bahari, Ali; Ghasemi, Shahram

    2017-09-01

    In this work, povidone/silica nanocomposite dielectric layers were deposited on the n-type Si (100) substrates for application in n-type silicon field-effect transistors (FET). Thermogravimetric analysis (TGA) indicated that strong chemical interactions between polymer and silica nanoparticles were created. In order to examine the effect of annealing temperatures on chemical interactions and nanostructure properties, annealing process was done at 423-513 K. Atomic force microscopy (AFM) images show the very smooth surfaces with very low surface roughness (0.038-0.088 nm). The Si2p and C1s core level photoemission spectra were deconvoluted to the chemical environments of Si and C atoms respectively. The obtained results of deconvoluted X-ray photoelectron spectroscopy (XPS) spectra revealed a high percentage of silanol hydrogen bonds in the sample which was not annealed. These bonds were inversed to stronger covalence bonds (siloxan bonds) at annealing temperature of 423 K. By further addition of temperature, siloxan bonds were shifted to lower binding energy of about 1 eV and their intensity were abated at annealing temperature of 513 K. The electrical characteristics were extracted from current-Voltage (I-V) and capacitance-voltage (C-V) measurements in metal-insulator-semiconductor (MIS) structure. The all n-type Si transistors showed very low threshold voltages (-0.24 to 1 V). The formation of the strongest cross-linking at nanostructure of dielectric film annealed at 423 K caused resulted in an un-trapped path for the transport of charge carriers yielding the lowest threshold voltage (0.08 V) and the highest electron mobility (45.01 cm2/V s) for its FET. By increasing the annealing temperature (473 and 513 K) on the nanocomposite dielectric films, the values of the average surface roughness, the capacitance and the FET threshold voltage increased and the value of FET electron field-effect mobility decreased.

  11. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

    NARCIS (Netherlands)

    Niang, K.M.; Barquinha, P.M.C.; Martins, R.F.P.; Cobb, B.; Powell, M.J.; Flewitt, A.J.

    2016-01-01

    Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analyse

  12. Influence of back-gate stress on the back-gate threshold voltage of a LOCOS-isolated SOI MOSFET

    Institute of Scientific and Technical Information of China (English)

    梅博; 毕津顺; 李多力; 刘思南; 韩郑生

    2012-01-01

    The performance of a LOCOS-isolated SOI MOSFET heavily depends on its back-gate characteristic, which can be affected by back-gate stress,A large voltage stress was applied to the back gate of SOI devices for at least 30 s at room temperature,which could effectively modify the back-gate threshold voltage of these devices.This modification is stable and time invariant.In order to improve the back-gate threshold voltage,positive substrate bias was applied to NMOS devices and negative substrate bias was applied to PMOS devices,These results suggest that there is a leakage path between source and drain along the silicon island edge,and the application of large backgate bias with the source,drain and gate grounded can strongly affect this leakage path.So we draw the conclusion that the back-gate threshold voltage,which is directly related to the leakage current,can be influenced by back-gate stress.

  13. Modeling and discussion of threshold voltage for a multi-floating gate FET pH sensor

    Institute of Scientific and Technical Information of China (English)

    Shi Zhaoxia; Zhu Dazhong

    2009-01-01

    Research into new pH sensors fabricated by the standard CMOS process is currently a hot topic. The new pH sensing multi-floating gate field effect transistor is found to have a very large threshold voltage, which is different from the normal ion-sensitive field effect transistor. After analyzing all the interface layers of the structure, a new sensitive model based on the Gauss theorem and the charge neutrality principle is created in this paper. According to the model, the charge trapped on the multi-floating gate during the process and the thickness of the sensitive layer are the main causes of the large threshold voltage. From this model, it is also found that removing the charge on the multi-floating gate is an effective way to decrease the threshold voltage. The test results for three different standard pH buffer solutions show the correctness of the model and point the way to solve the large threshold problem.

  14. Controllable Threshold Voltage in Organic Complementary Logic Circuits with an Electron-Trapping Polymer and Photoactive Gate Dielectric Layer.

    Science.gov (United States)

    Dao, Toan Thanh; Sakai, Heisuke; Nguyen, Hai Thanh; Ohkubo, Kei; Fukuzumi, Shunichi; Murata, Hideyuki

    2016-07-20

    We present controllable and reliable complementary organic transistor circuits on a PET substrate using a photoactive dielectric layer of 6-[4'-(N,N-diphenylamino)phenyl]-3-ethoxycarbonylcoumarin (DPA-CM) doped into poly(methyl methacrylate) (PMMA) and an electron-trapping layer of poly(perfluoroalkenyl vinyl ether) (Cytop). Cu was used for a source/drain electrode in both the p-channel and n-channel transistors. The threshold voltage of the transistors and the inverting voltage of the circuits were reversibly controlled over a wide range under a program voltage of less than 10 V and under UV light irradiation. At a program voltage of -2 V, the inverting voltage of the circuits was tuned to be at nearly half of the supply voltage of the circuit. Consequently, an excellent balance between the high and low noise margins (NM) was produced (64% of NMH and 68% of NML), resulting in maximum noise immunity. Furthermore, the programmed circuits showed high stability, such as a retention time of over 10(5) s for the inverter switching voltage. Our findings bring about a flexible, simple way to obtain robust, high-performance organic circuits using a controllable complementary transistor inverter.

  15. Modeling and control of threshold voltage based on pull-in characteristic for micro self-locked switch

    Science.gov (United States)

    Deng, Jufeng; Hao, Yongping; Liu, Shuangjie

    2017-09-01

    Micro self-locked switches (MSS), where execution voltage corresponds to the output signal, are efficient and convenient platforms for sensor applications. The proper functioning of these sensing devices requires driving accurate displacement under execution voltage. In this work, we show how to control the actuating properties of MSSS. This switch comprises microstructures of various shapes with dimensions from 3.5 to 180 μm, which are optimized to encode a desired manufacture deviation by means of mathematical model of threshold voltage. Compared with pull-in voltage, threshold voltage is more easy to control the pull-in instability point by theoretical analysis. With the help of advanced manufacture technology, switch is processed in accordance with the proposed control method. Then, experimental results show that it is better, which have been validated by corresponding experiments. In addition, they can be known from experiments that the manufacturing technology is advanced and feasible, and its high resilience and stably self-locked function can achieve instantaneously sensing.

  16. Low-Voltage InGaZnO Thin Film Transistors with Small Sub-Threshold Swing.

    Science.gov (United States)

    Cheng, C H; Chou, K I; Hsu, H H

    2015-02-01

    We demonstrate a low-voltage driven, indium-gallium-zinc oxide thin-film transistor using high-κ LaAlO3 gate dielectric. A low VT of 0.42 V, very small sub-threshold swing of 68 mV/dec, field-effect mobility of 4.1 cm2/Ns and low operation voltage of 1.4 V were reached simultaneously in LaAlO3/IGZO TFT device. This low-power and small SS TFT has the potential for fast switching speed and low power applications.

  17. 65NM sub-threshold 11T-SRAM for ultra low voltage applications

    DEFF Research Database (Denmark)

    Moradi, Farshad; Wisland, Dag T.; Aunet, Snorre;

    simulated results. The circuit was simulated for supply voltages from 0.2 V to 0.35 V verifying the robustness of the proposed circuit for different supply voltages. The simulations show a significant improvement in SNM and a 4X improvement in read speed still maintaining a satisfactory write noise margin...

  18. 65NM sub-threshold 11T-SRAM for ultra low voltage applications

    DEFF Research Database (Denmark)

    Moradi, Farshad; Wisland, Dag T.; Aunet, Snorre

    simulated results. The circuit was simulated for supply voltages from 0.2 V to 0.35 V verifying the robustness of the proposed circuit for different supply voltages. The simulations show a significant improvement in SNM and a 4X improvement in read speed still maintaining a satisfactory write noise margin...

  19. Stress lowers the detection threshold for foul-smelling 2-mercaptoethanol.

    Science.gov (United States)

    Pacharra, Marlene; Schäper, Michael; Kleinbeck, Stefan; Blaszkewicz, Meinolf; Wolf, Oliver T; van Thriel, Christoph

    2016-01-01

    Previous studies have reported enhanced vigilance for threat-related information in response to acute stress. While it is known that acute stress modulates sensory systems in humans, its impact on olfaction and the olfactory detection of potential threats is less clear. Two psychophysical experiments examined, if acute stress lowers the detection threshold for foul-smelling 2-mercaptoethanol. Participants in Experiment 1 (N = 30) and Experiment 2 (N = 32) were randomly allocated to a control group or a stress group. Participants in the stress group underwent a purely psychosocial stressor (public mental arithmetic) in Experiment 1 and a stressor that combined a physically demanding task with social-evaluative threat in Experiment 2 (socially evaluated cold-pressor test). In both experiments, olfactory detection thresholds were repeatedly assessed by means of dynamic dilution olfactometry. Each threshold measurement consisted of three trials conducted using an ascending method of limits. Participants in the stress groups showed the expected changes in heart rate, salivary cortisol, and mood measures in response to stress. About 20 min after the stressor, participants in the stress groups could detect 2-mercaptoethanol at a lower concentration than participants in the corresponding control groups. Our results show that acute stress lowers the detection threshold for a malodor.

  20. Phased arrays: A strategy to lower the energy threshold for neutrinos

    Directory of Open Access Journals (Sweden)

    Wissel Stephanie

    2017-01-01

    Full Text Available In-ice radio arrays are optimized for detecting the highest energy, cosmogenic neutrinos expected to be produced though cosmic ray interactions with background photons. However, there are two expected populations of high energy neutrinos: the astrophysical flux observed by IceCube (~1 PeV and the cosmogenic flux (~ 1017 eV or 100 PeV. Typical radio arrays employ a noise-riding trigger, which limits their minimum energy threshold based on the background noise temperature of the ice. Phased radio arrays could lower the energy threshold by combining the signals from several channels before triggering, thereby improving the signal-to-noise at the trigger level. Reducing the energy threshold would allow radio experiments to more efficiently overlap with optical Cherenkov neutrino telescopes as well as for more efficient searches for cosmogenic neutrinos. We discuss the proposed technique and prototypical phased arrays deployed in an anechoic chamber and at Greenland’s Summit Station.

  1. Modelling of capacitance and threshold voltage for ultrathin normally-off AlGaN /GaN MOSHEMT

    Science.gov (United States)

    Swain, R.; Jena, K.; Lenka, T. R.

    2017-01-01

    A compact quantitative model based on oxide semiconductor interface density of states (DOS) is proposed for Al0.25Ga0.75N/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT). Mathematical expressions for surface potential, sheet charge concentration, gate capacitance and threshold voltage have been derived. The gate capacitance behaviour is studied in terms of capacitance-voltage (CV) characteristics. Similarly, the predicted threshold voltage ( V T) is analysed by varying barrier thickness and oxide thickness. The positive V T obtained for a very thin 3 nm AlGaN barrier layer enables the enhancement mode operation of the MOSHEMT. These devices, along with depletion mode devices, are basic constituents of cascode configuration in power electronic circuits. The expressions developed are used in conventional long-channel HEMT drain current equation and evaluated to obtain different DC characteristics. The obtained results are compared with experimental data taken from literature which show good agreement and hence endorse the proposed model.

  2. Modelling of capacitance and threshold voltage for ultrathin normally-off AlGaN/GaN MOSHEMT

    Indian Academy of Sciences (India)

    R SWAIN; K JENA; T R LENKA

    2017-01-01

    A compact quantitative model based on oxide semiconductor interface density of states (DOS) is proposed for Al$_{0.25}$Ga$_{0.75}$N/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT). Mathematical expressions for surface potential, sheet charge concentration, gate capacitance and threshold voltage have been derived. The gate capacitance behaviour is studied in terms of capacitance–voltage (CV) characteristics. Similarly, the predicted threshold voltage ($V_T$) is analysed by varying barrier thickness and oxide thickness. The positive $V_T$ obtained for a very thin 3 nm AlGaN barrier layer enables the enhancement mode operation of the MOSHEMT. These devices, along with depletion mode devices, are basic constituents of cascode configuration in power electronic circuits. The expressions developed are used in conventional long-channel HEMT drain current equation and evaluated to obtain different DC characteristics. The obtained results are compared withexperimental data taken from literature which show good agreement and hence endorse the proposed model.

  3. Experimental Study of the Course of Threshold Current, Voltage and Electrode Impedance During Stepwise Stimulation From the Skin Surface to the Human Cortex

    NARCIS (Netherlands)

    Szelenyi, Andrea; Journee, Henricus Louis; Herrlich, Simon; Galistu, Gianni M.; van den Berg, Joris; van Dijk, J. Marc C.

    Background: Transcranial electric stimulation as used during intraoperative neurostimulation is dependent on electrode and skull impedances. Objective: Threshold currents, voltages and electrode impedances were evaluated with electrical stimulation at 8 successive layers between the skin and the

  4. Experimental Study of the Course of Threshold Current, Voltage and Electrode Impedance During Stepwise Stimulation From the Skin Surface to the Human Cortex

    NARCIS (Netherlands)

    Szelenyi, Andrea; Journee, Henricus Louis; Herrlich, Simon; Galistu, Gianni M.; van den Berg, Joris; van Dijk, J. Marc C.

    2013-01-01

    Background: Transcranial electric stimulation as used during intraoperative neurostimulation is dependent on electrode and skull impedances. Objective: Threshold currents, voltages and electrode impedances were evaluated with electrical stimulation at 8 successive layers between the skin and the cer

  5. Surface Potential and Threshold Voltage Model of Fully Depleted Narrow Channel SOI MOSFET Using Analytical Solution of 3D Poisson’s Equation

    Directory of Open Access Journals (Sweden)

    Prashant Mani

    2015-06-01

    Full Text Available The present paper is about the modeling of surface potential and threshold voltage of Fully Depleted Silicon on Insulator MOSFET. The surface potential is calculated by solving the 3D Poisson’s equation analytically. The appropriate boundary conditions are used in calculations. The effect of narrow channel width and short channel length for suppression of SCE is analyzed. The narrow channel width effect in the threshold voltage is analyzed for thin film Fully Depleted SOI MOSFET.

  6. A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO2/Si stacked MOSFETs

    Institute of Scientific and Technical Information of China (English)

    Ma Fei; Liu Hong-Xia; Fan Ji-Bin; Wang Shu-Long

    2012-01-01

    In this paper the influences of the metal-gate and high-k/SiO2/Si stacked structure on the metal-oxidesemiconductor field-effect transistor (MOSFET) axe investigated.The flat-band voltage is revised by considering the influences of stacked structure and metal-semiconductor work function fluctuation. The two-dimensional Poisson's equation of potential distribution is presented.A threshold voltage analytical model for metal-gate/high-k/SiO2/Si stacked MOSFETs is developed by solving these Poisson's equations using the boundary conditions.The model is verified by a two-dimensional device simulator,which provides the basic design guidance for metal-gate/high-k/SiO2/Si stacked MOSFETs.

  7. Threshold-Voltage Shifts in Organic Transistors Due to Self-Assembled Monolayers at the Dielectric: Evidence for Electronic Coupling and Dipolar Effects.

    Science.gov (United States)

    Aghamohammadi, Mahdieh; Rödel, Reinhold; Zschieschang, Ute; Ocal, Carmen; Boschker, Hans; Weitz, R Thomas; Barrena, Esther; Klauk, Hagen

    2015-10-21

    The mechanisms behind the threshold-voltage shift in organic transistors due to functionalizing of the gate dielectric with self-assembled monolayers (SAMs) are still under debate. We address the mechanisms by which SAMs determine the threshold voltage, by analyzing whether the threshold voltage depends on the gate-dielectric capacitance. We have investigated transistors based on five oxide thicknesses and two SAMs with rather diverse chemical properties, using the benchmark organic semiconductor dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene. Unlike several previous studies, we have found that the dependence of the threshold voltage on the gate-dielectric capacitance is completely different for the two SAMs. In transistors with an alkyl SAM, the threshold voltage does not depend on the gate-dielectric capacitance and is determined mainly by the dipolar character of the SAM, whereas in transistors with a fluoroalkyl SAM the threshold voltages exhibit a linear dependence on the inverse of the gate-dielectric capacitance. Kelvin probe force microscopy measurements indicate this behavior is attributed to an electronic coupling between the fluoroalkyl SAM and the organic semiconductor.

  8. Hypothesis: Obesity Is Associated with a Lower Mutation Threshold in Colon Cancer.

    Science.gov (United States)

    Bordonaro, Michael; Lazarova, Darina

    2015-01-01

    Neoplastic progression requires accumulation of several mutations (mutation threshold). We hypothesize that obesity raises the risk of microsatellite stable (MSS) colon cancer (CC) at least in part by decreasing the mutation threshold. Thus, we posit that obese patients require fewer mutations, particularly driver mutations, compared to their normal BMI counterparts. Further, we suggest that the reduced number of required mutations in obese patients could be due to several factors, including the high levels of cytokines that accompany obesity. Cytokine-activated ERK, AKT, and JAK/STAT signaling could synergize with CC-initiating mutations to promote intestinal neoplastic development. Therefore, driver mutations that induce these specific pathways may not be "required" for neoplastic development in obesity; alteration in cell signaling consequent to obesity can substitute for some driver mutations in neoplastic progression. This hypothesis is supported by preliminary analyses of data from The Cancer Genome Atlas (TCGA). Thus, we observed that, compared to normal weight patients, cancer genomes of obese MSS CC patients exhibit fewer somatic mutations, and correspondingly lower numbers of mutations in driver genes (P = 0.026).The most striking observation was the lower number of KRAS mutations detected in patients with high body-mass index (BMI). These intriguing observations require further validation with increased number of patients, taking into account all possible confounding factors. If the hypothesis is confirmed, future studies should also address several possible explanations for the observed lower mutation threshold in obese MSS CC patients.

  9. Adaptive Tuning of Frequency Thresholds Using Voltage Drop Data in Decentralized Load Shedding

    DEFF Research Database (Denmark)

    Hoseinzadeh, Bakhtyar; Faria Da Silva, Filipe Miguel; Bak, Claus Leth

    2015-01-01

    Load shedding (LS) is the last firewall and the most expensive control action against power system blackout. In the conventional under frequency LS (UFLS) schemes, the load drop locations are already determined independently of the event location. Furthermore, the frequency thresholds of LS relays...

  10. Development rate and lower temperature threshold in the eggs of Eurygaster integriceps (Heteroptera: Scutelleridae)

    Institute of Scientific and Technical Information of China (English)

    Mujgan Kivan

    2008-01-01

    The sunn pest, Eurygaster integriceps Put. has a wide distribution in the Palearctic region. It is the most important pest problem of wheat in Turkey. The objective of this study was to attain better knowledge of the development of the sunn pest eggs. The lower temperature threshold and development rate of eggs were determined at 17, 20, 23, 26 and 32℃ ± 1℃ in the laboratory. A linear model was used to describe the developmental rate and temperature. The egg development required 90.9 degree-days above the theoretical threshold of 11.7 ℃. The development time was 17.6 ± 0.1 days at 17℃, and 4.5 ± 0.01 days at 32℃. Incubation time was inversely related to temperature. The study showed that the eggs of E. integriceps needed shorter periods of time to complete their development than immature stages of their parasitoids Trissolcus spp.

  11. Lowering the sensory threshold and enhancing the responsivity of biomimetic hair flow sensors by electrostatic spring softening

    NARCIS (Netherlands)

    Droogendijk, H.; Bruinink, C.M.; Sanders, Remco G.P.; Siebelder, Ortwin G.; Krijnen, Gijsbertus J.M.

    2011-01-01

    We report improvements in detection limit and responsivity of biomimetic hair flow sensors by electrostatic spring-softening (ESS). Applying a DC voltage to our capacitive flow sensors results in a reduced sensory threshold, which gives an improvement for the flow detection limit of more than 30%.

  12. Hypoxia progressively lowers thermal gaping thresholds in bearded dragons, Pogona vitticeps.

    Science.gov (United States)

    Tattersall, Glenn J; Gerlach, Rebecca M

    2005-09-01

    Most animals, including reptiles, lower body temperature (Tb) under hypoxic conditions. Numerous physiological and behavioural traits significant to the regulation of Tb are altered by hypoxia in ways that suggest an orchestrated adjustment of Tb at a new and lower regulated level. We examined this matter in bearded dragons, Pogona vitticeps, a species of reptile that naturally exhibits open mouth gaping at high temperatures, presumably in order to promote evaporation and thus prevent or avoid further increases in Tb. The threshold for the onset of gaping (assessed as the temperature at which lizards spent 50% of their time gaping) was reduced from 36.9 degrees C in normoxia to 35.5 degrees C at 10% and 34.3 degrees C at 6% O2. The overall magnitude or degree of gaping, measured qualitatively, was more pronounced at lower temperatures in hypoxia. Females consistently had lower gaping threshold temperatures than did males, and this difference was retained throughout exposure to hypoxia. In addition to gaping, evaporative water loss from the cloaca may also play a significant role in temperature regulation, since the ambient temperature at which cloacal discharge occurred was also reduced significantly in hypoxia. The results reported herein strongly support the view that hypoxia reduces temperature set-point in lizards and that such changes are coordinated by specific behavioural thermoeffectors that modulate evaporative water loss and thus facilitate a high potential for controlling or modifying Tb.

  13. Modeling sediment transport in the lower Yellow River and dynamic equilibrium threshold value

    Institute of Scientific and Technical Information of China (English)

    HU; Chunhong; GUO; Qingchao

    2004-01-01

    A major problem in the lower Yellow River is the insufficient incoming water and excessive sediment supply, which results in serious deposition, continuous rise of the river bed, and austere flood control situation. To understand the sediment transport regularity of the lower Yellow River and determine the relationship between sedimentation,incoming water and sediment, and zone water diversion, a mathematical model of the sediment suitable for the characteristics of the lower Yellow River has been developed.This model is first rated and verified by large quantity of observed data, and it is then used to analyze silting reduction for the lower Yellow River by Xiaolangdi Reservoir's operation,the relationship between zone water diversion and channel sedimentation, and critical equilibrium of sedimentation in the lower Yellow River. The threshold values of equilibrium of sedimentation in the lower Yellow River are estimated and they suggest that deposition in the lower Yellow River can be effectively reduced by the operation of regulating flow and sediment from Xiaolangdi Reservoir, water-soil conservation, and controlling water diversion along the lower Yellow River.

  14. Elevated Vibration Perception Thresholds in CIDP Patients Indicate More Severe Neuropathy and Lower Treatment Response Rates.

    Directory of Open Access Journals (Sweden)

    Alon Abraham

    Full Text Available Vibration perception threshold (VPT examination using a neurothesiometer provides objective, sensitive and specific information, and has been utilized mainly in patients with diabetic polyneropathy.Explore the utility of VPT examination in CIDP patients.CIDP subjects attending the Neuromuscular clinic between 01/2013 and 12/2014 were evaluated. Demographic data, clinical history, physical examination, VPT values, and electrophysiologic data from their charts were extracted.70 charts were reviewed. 55 CIDP patients had elevated VPT, associated with higher frequency of abnormal sensory testing for various modalities (92.7% vs. 46.7%, p<0.0001, lower sensory and motor amplitudes and reduced conduction velocities on nerve conduction studies, and lower treatment response rates (54% vs. 93%, p = 0.01.VPT examination is a simple tool, which is a reliable and sensitive measure not only for diabetic neuropathy, but also for CIDP. Moreover, in CIDP, elevated VPT values are also associated with lower treatment response rates.

  15. Low tube voltage CT for improved detection of pancreatic cancer: detection threshold for small, simulated lesions

    Directory of Open Access Journals (Sweden)

    Holm Jon

    2012-07-01

    Full Text Available Abstract Background Pancreatic ductal adenocarcinoma is associated with dismal prognosis. The detection of small pancreatic tumors which are still resectable is still a challenging problem. The aim of this study was to investigate the effect of decreasing the tube voltage from 120 to 80 kV on the detection of pancreatic tumors. Methods Three scanning protocols was used; one using the standard tube voltage (120 kV and current (160 mA and two using 80 kV but with different tube currents (500 and 675 mA to achieve equivalent dose (15 mGy and noise (15 HU as that of the standard protocol. Tumors were simulated into collected CT phantom images. The attenuation in normal parenchyma at 120 kV was set at 130 HU, as measured previously in clinical examinations, and the tumor attenuation was assumed to differ 20 HU and was set at 110HU. By scanning and measuring of iodine solution with different concentrations the corresponding tumor and parenchyma attenuation at 80 kV was found to be 185 and 219 HU, respectively. To objectively evaluate the differences between the three protocols, a multi-reader multi-case receiver operating characteristic study was conducted, using three readers and 100 cases, each containing 0–3 lesions. Results The highest reader averaged figure-of-merit (FOM was achieved for 80 kV and 675 mA (FOM = 0,850, and the lowest for 120 kV (FOM = 0,709. There was a significant difference between the three protocols (p t-test shows that there was a significant difference between 120 and 80 kV, but not between the two levels of tube currents at 80 kV. Conclusion We conclude that when decreasing the tube voltage there is a significant improvement in tumor conspicuity.

  16. Transparent Pixel Circuit with Threshold Voltage Compensation Using ZnO Thin-Film Transistors for Active-Matrix Organic Light Emitting Diode Displays

    Science.gov (United States)

    Yang, Ik-Seok; Kwon, Oh-Kyong

    2009-03-01

    A transparent pixel circuit with a threshold voltage compensating scheme using ZnO thin-film transistors (TFTs) for active-matrix organic light emitting diode (AMOLED) displays is proposed. This circuit consists of five n-type ZnO TFTs and two capacitors and can compensate for the threshold voltage variation of ZnO TFTs in real time. From simulation results, the maximum deviation of the emission current of the pixel circuit with a threshold voltage variation of ±1 V is determined to be less than 10 nA. From measurement results, it is verified that the maximum deviation of measured emission currents with measurement position in a glass substrate is less than 15 nA in a higher current range, and the deviation of emission current with time is less than 3%.

  17. Continuous wave operation of distributed feedback quantum cascade lasers with low threshold voltage and low power consumption

    Science.gov (United States)

    Xie, Feng; Caneau, Catherine; LeBlanc, Herve P.; Coleman, Sean; Hughes, Lawrence C.; Zah, Chung-en

    2012-03-01

    We demonstrated the room temperature continuous wave (CW) operation of mid-infrared distributed feedback (DFB) quantum cascade lasers (QCLs) made of strain balanced GaInAs/AlInAs material on InP substrates for sensing CO2 isotope and N2O gas for potential applications that need battery powered portable devices in a sensor network. For the former device at 4.35 μm wavelength, we demonstrated a low threshold voltage of less than 8 V for battery operation and a near circular far field pattern with small divergent angles of 33 by 28 degrees full width at half maximum (FWHM) in vertical and horizontal directions, respectively, for easy collimation. For the latter device at 4.5 μm wavelength, we demonstrated a low CW threshold power consumption of 0.7 W at 20 °C. A side mode suppression ratio (SMSR) of 30 dB was achieved within the whole operating current and temperature ranges for both lasers.

  18. Controlling the threshold voltage of SnO2 nanowire transistors with dual in-plane-gate structures gated by chitosan proton conductors

    Science.gov (United States)

    Liu, Huixuan; Tan, Rongri

    2017-05-01

    We fabricated novel dual in-plane-gate electric-double-layer (EDL) SnO2 nanowire transistors gated by chitosan using only one transmission electron microscopy (TEM) nickel grid mask at room temperature, and we successfully controlled its threshold voltage. By changing the second in-plane gate bias from 1.0 to -1.0 V, we tuned the threshold voltage of these transistors from -0.35 to 0.21 V. Their operation voltage was 1.0 V, because the EDL gate dielectric can lead to high gate dielectric capacitance (4.24 µF/cm2). These dual in-plane-gate nanowire transistors could pave the way to useful low-voltage nanoelectronic devices.

  19. Two-Dimensional Analytical Modeling Of Threshold Voltage Of Doped Short-Channel Triple-Material Double-Gate (TM-DG MOSFET’S

    Directory of Open Access Journals (Sweden)

    Sarvesh Dubey

    2011-01-01

    Full Text Available In this paper, a short-channel threshold voltage model is presented for triple-material double-gate(TM-DG MOSFET with uniform doping profile in the channel region. To obtain the channel potential expression, the two-dimensional (2D Poisson’s equation has been solved using the parabolic potential approximation with suitable boundary conditions. Subsequently, the surface potential expression has been employed to derive an analytical expression of thresholod. The threshold voltage variation with various device parameters has been shown. To validate the model, ATLASTM based numerical simulation results have been used.

  20. Examination of flatband and threshold voltage tuning of HfO2/TiN field effect transistors by dielectric cap layers

    Science.gov (United States)

    Guha, S.; Paruchuri, V. K.; Copel, M.; Narayanan, V.; Wang, Y. Y.; Batson, P. E.; Bojarczuk, N. A.; Linder, B.; Doris, B.

    2007-02-01

    The authors have examined the role of sub nanometer La2O3 and LaN cap layers interposed in Si /HfO2/TiN high-k gate dielectric stacks in tuning the flatband and threshold voltages of capacitors and transistors. High performance, band edge n metal oxide field effect transistors with channel lengths down to 60nm may be fabricated without significant compromise in mobility, electrical thickness, and threshold voltage. They have carried out a microstructural evaluation of these stacks and correlated these results with the electrical behavior of the devices.

  1. Elevated Vibration Perception Thresholds in CIDP Patients Indicate More Severe Neuropathy and Lower Treatment Response Rates

    Science.gov (United States)

    Abraham, Alon; Albulaihe, Hana; Alabdali, Majed; Qrimli, Mohammad; Breiner, Ari; Barnett, Carolina; Katzberg, Hans D.; Lovblom, Leif E.; Perkins, Bruce A.; Bril, Vera

    2015-01-01

    Introduction Vibration perception threshold (VPT) examination using a neurothesiometer provides objective, sensitive and specific information, and has been utilized mainly in patients with diabetic polyneropathy. Objectives Explore the utility of VPT examination in CIDP patients. Methods CIDP subjects attending the Neuromuscular clinic between 01/2013 and 12/2014 were evaluated. Demographic data, clinical history, physical examination, VPT values, and electrophysiologic data from their charts were extracted. Results 70 charts were reviewed. 55 CIDP patients had elevated VPT, associated with higher frequency of abnormal sensory testing for various modalities (92.7% vs. 46.7%, pCIDP. Moreover, in CIDP, elevated VPT values are also associated with lower treatment response rates. PMID:26545096

  2. Analytical Lower and Upper Bounds for the Threshold Surfaces of Quantum Error Correcting Codes

    Science.gov (United States)

    Takagi, Ryuji; Yoder, Theodore; Chuang, Isaac

    If all the physical gates in a fault tolerant code construction have a failure probability below a certain value, the failure probability of the construction approaches zero after many concatenations. This value is called the threshold value of the code and lower bounds for it for various codes have been reported in the literature. However, these approaches do not take into account that the failure probability of each species of logical gate depends on that of many different species of physical gates, and that the distribution of logical failure probability depends on that of many different physical gates. How can we reconcile the interdependency of the failure probabilities of all the various species of gates? Direct simulation would be one of the possible ways to attack this question, but it would be difficult to be done at high concatenation levels because of the exponential growth of simulation time. Here, we deal with this question by instead considering a multidimensional space of the failure probabilities of the physical gates and study the set of points that approach zero error after a large number of concatenations. We present a way to obtain lower and upper bounds for the boundary of this set, what we call the threshold surface, given a particular code and constructions of logical gates. Our method uses only the logical failure probabilities after one concatenation, and moreover the running time of the algorithm scales linearly with respect to concatenation levels. We hope this will establish a reasonable goal for experiments to work towards a scalable quantum computer.

  3. High-performance low-leakage regions of nano-scaled CMOS digital gates under variations of threshold voltage and mobility

    Institute of Scientific and Technical Information of China (English)

    Hossein AGHABABA; Behjat FOROUZANDEH; Ali AFZALI-KUSHA

    2012-01-01

    We propose a modeling methodology for both leakage power consumption and delay of basic CMOS digital gates in the presence of threshold voltage and mobility variations.The key parameters in determining the leakage and delay are OFF and ON currents,respectively,which are both affected by the variation of the threshold voltage.Additionally,the current is a strong function of mobility.The proposed methodology relies on a proper modeling of the threshold voltage and mobility variations,which may be induced by any source.Using this model,in the plane of threshold voltage and mobility,we determine regions for different combinations of performance (speed) and leakage.Based on these regions,we discuss the trade-offbetween leakage and delay where the leakage-delay-product is the optimization objective.To assess the accuracy of the proposed model,we compare its predictions with those of HSPICE simulations for both basic digital gates and ISCAS85 benchmark circuits in 45-,65-,and 90-nm technologies.

  4. Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 C to 500 C

    Science.gov (United States)

    Neudeck, Philip G.; Spry, David J.; Chen, Liangyu

    2015-01-01

    This work reports a theoretical and experimental study of 4H-SiC JFET threshold voltage as a function of substrate body bias, device position on the wafer, and temperature from 25 C (298K) to 500 C (773K). Based on these results, an alternative approach to SPICE circuit simulation of body effect for SiC JFETs is proposed.

  5. Lenalidomide augments actin remodeling and lowers NK-cell activation thresholds.

    Science.gov (United States)

    Lagrue, Kathryn; Carisey, Alex; Morgan, David J; Chopra, Rajesh; Davis, Daniel M

    2015-07-02

    As multiple myeloma (MM) progresses, natural killer (NK)-cell responses decline against malignant plasma cells. The immunomodulatory drug lenalidomide is widely used for treatment of MM but its influence on NK-cell biology is unclear. Here, we report that lenalidomide lowers the threshold for NK-cell activation, causing a 66% decrease in the 50% effective concentration (EC50) for activation through CD16, and a 38% decrease in EC50 for NK group 2 member D (NKG2D)-mediated activation, allowing NK cells to respond to lower doses of ligand. In addition, lenalidomide augments NK-cell responses, causing a twofold increase in the proportion of primary NK cells producing interferon-γ (IFN-γ), and a 20-fold increase in the amount of IFN-γ produced per cell. Importantly, lenalidomide did not trigger IFN-γ production in unstimulated NK cells. Thus, lenalidomide enhances the NK-cell arm of the immune response, without activating NK cells inappropriately. Of particular clinical importance, lenalidomide also allowed NK cells to be activated by lower doses of rituximab, an anti-CD20 monoclonal antibody (mAb) widely used to treat B-cell malignancies. This supports combined use of lenalidomide and rituximab in a clinical setting. Finally, superresolution microscopy revealed that lenalidomide increased the periodicity of cortical actin at immune synapses, resulting in an increase in the area of the actin mesh predicted to be penetrable to vesicles containing IFN-γ. NK cells from MM patients also responded to lenalidomide in this way. This indicates that nanometer-scale rearrangements in cortical actin, a recently discovered step in immune synapse assembly, are a potential new target for therapeutic compounds.

  6. Competitive behavior of photons contributing to junction voltage jump in narrow band-gap semiconductor multi-quantum-well laser diodes at lasing threshold

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Liefeng, E-mail: fengliefeng@tju.edu.cn, E-mail: lihongru@nankai.edu.cn; Yang, Xiufang; Wang, Cunda; Yao, Dongsheng [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University, Tianjin 300072 (China); Li, Yang [Business and Vocational College of Hainan, Haikou 570203 (China); Li, Ding; Hu, Xiaodong [Research Center for Wide Band Gap Semiconductors, State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Li, Hongru, E-mail: fengliefeng@tju.edu.cn, E-mail: lihongru@nankai.edu.cn [State Key Laboratory for Medicinal Chemistry and Biology, College of Pharmacy, Nankai University, Tianjin 300071 (China)

    2015-04-15

    The junction behavior of different narrow band-gap multi-quantum-well (MQW) laser diodes (LDs) confirmed that the jump in the junction voltage in the threshold region is a general characteristic of narrow band-gap LDs. The relative change in the 1310 nm LD is the most obvious. To analyze this sudden voltage change, the threshold region is divided into three stages by I{sub th}{sup l} and I{sub th}{sup u}, as shown in Fig. 2; I{sub th}{sup l} is the conventional threshold, and as long as the current is higher than this threshold, lasing exists and the IdV/dI-I plot drops suddenly; I{sub th}{sup u} is the steady lasing point, at which the separation of the quasi-Fermi levels of electron and holes across the active region (V{sub j}) is suddenly pinned. Based on the evolutionary model of dissipative structure theory, the rate equations of the photons in a single-mode LD were deduced in detail at I{sub th}{sup l} and I{sub th}{sup u}. The results proved that the observed behavior of stimulated emission suddenly substituting for spontaneous emission, in a manner similar to biological evolution, must lead to a sudden increase in the injection carriers in the threshold region, which then causes the sudden increase in the junction voltage in this region.

  7. Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators

    Science.gov (United States)

    Sun, Yi-Lin; Xie, Dan; Xu, Jian-Long; Zhang, Cheng; Dai, Rui-Xuan; Li, Xian; Meng, Xiang-Jian; Zhu, Hong-Wei

    2016-03-01

    Double-gated field effect transistors have been fabricated using the SWCNT networks as channel layer and the organic ferroelectric P(VDF-TrFE) film spin-coated as top gate insulators. Standard photolithography process has been adopted to achieve the patterning of organic P(VDF-TrFE) films and top-gate electrodes, which is compatible with conventional CMOS process technology. An effective way for modulating the threshold voltage in the channel of P(VDF-TrFE) top-gate transistors under polarization has been reported. The introduction of functional P(VDF-TrFE) gate dielectric also provides us an alternative method to suppress the initial hysteresis of SWCNT networks and obtain a controllable ferroelectric hysteresis behavior. Applied bottom gate voltage has been found to be another effective way to highly control the threshold voltage of the networked SWCNTs based FETs by electrostatic doping effect.

  8. Two methods of tuning threshold voltage of bulk FinFETs with replacement high-k metal-gate stacks

    Science.gov (United States)

    Xu, Miao; Zhu, Huilong; Zhang, Yanbo; Xu, Qiuxia; Zhang, Yongkui; Qin, Changliang; Zhang, Qingzhu; Yin, Huaxiang; Xu, Hao; Chen, Shuai; Luo, Jun; Li, Chunlong; Zhao, Chao; Ye, Tianchun

    2017-03-01

    In this work, we propose two threshold voltage (VTH) tuning methods for bulk FinFETs with replacement high-k metal gate. The first method is to perform a vertical implantation into fin structure after dummy gate removal, self-aligned forming halo & punch through stop pocket (halo & PTSP) doping profile. The second method is to execute P+/BF2+ ion implantations into the single common work function (WF) layer in N-/P-FinFETs, respectively. These two methods have been investigated by TCAD simulations and MOS-capacitor experiments respectively, and then integrated into FinFET fabrication successfully. Experimental results show that the halo & PTSP doping profile can reduce VTH roll off and total variation. With P+/BF2+ doped WF layer, the VTH-sat shift -0.43 V/+1.26 V for N-FinFETs and -0.75 V/+0.11 V for P-FinFETs, respectively, with gate length of 500 nm. The proposed two methods are simple and effective for FinFET VTH tuning, and have potential for future application of massive production.

  9. Quantitative Sensory Testing and Current Perception Threshold Testing in Patients With Chronic Pain Following Lower Extremity Fracture.

    Science.gov (United States)

    Griffioen, Mari A; Greenspan, Joel D; Johantgen, Meg; Von Rueden, Kathryn; O'Toole, Robert V; Dorsey, Susan G; Renn, Cynthia L

    2017-01-01

    Chronic pain is a significant problem for patients with lower extremity injuries. While pain hypersensitivity has been identified in many chronic pain conditions, it is not known whether patients with chronic pain following lower extremity fracture report pain hypersensitivity in the injured leg. To quantify and compare peripheral somatosensory function and sensory nerve activation thresholds in persons with chronic pain following lower extremity fractures with a cohort of persons with no history of lower extremity fractures. This was a cross-sectional study where quantitative sensory testing and current perception threshold testing were conducted on the injured and noninjured legs of cases and both legs of controls. A total of 14 cases and 28 controls participated in the study. Mean time since injury at the time of testing for cases was 22.3 (standard deviation = 12.1) months. The warmth detection threshold ( p = .024) and nerve activation thresholds at 2,000 Hz ( p sensory nerve function at the site of injury in patients with chronic pain following lower extremity fractures using quantitative sensory testing and current perception threshold testing.

  10. "The Lower Threshold" phenomenon in tumor cells toward endogenous digitalis-like compounds: Responsible for tumorigenesis?

    Directory of Open Access Journals (Sweden)

    Heidrun Weidemann

    2012-01-01

    Full Text Available Since their first discovery as potential anti-cancer drugs decades ago, there is increasing evidence that digitalis-like compounds (DLC have anti-tumor effects. Less is known about endogenous DLC (EDLC metabolism and regulation. As stress hormones synthesized in and secreted from the adrenal gland, they likely take part in the hypothalamo-pituitary-adrenal (HPA axis. In a previous study, we revealed reduced EDLC concentrations in plasma and organs from immune-compromised animals and proposed that a similar situation of a deregulated HPA axis with "adrenal EDLF exhaustion" may contribute to tumorigenesis in chronic stress situations. Here, we put forward the hypothesis that a lowered EDLC response threshold of tumor cells as compared with normal cells increases the risk of tumorigenesis, especially in those individuals with reduced EDLC plasma concentrations after chronic stress exposure. We will evaluate this hypothesis by (a summarizing the effects of different DLC concentrations on tumor as compared with normal cells and (b reviewing some essential differences in the Na/K-ATPase of tumor as compared with normal cells (isoform pattern, pump activity, mutations of other signalosome receptors. We will conclude that (1 tumor cells, indeed, seem to have their individual "physiologic" EDLC response range that already starts at pmolar levels and (2 that individuals with markedly reduced (pmolar EDLC plasma levels are predisposed to cancer because these EDLC concentrations will predominantly stimulate the proliferation of tumor cells. Finally, we will summarize preliminary results from our department supporting this hypothesis.

  11. Development of CDMS-II Surface Event Rejection Techniques and Their Extensions to Lower Energy Thresholds

    Energy Technology Data Exchange (ETDEWEB)

    Hofer, Thomas James [Univ. of Minnesota, Minneapolis, MN (United States)

    2014-12-01

    The CDMS-II phase of the Cryogenic Dark Matter Search, a dark matter direct-detection experiment, was operated at the Soudan Underground Laboratory from 2003 to 2008. The full payload consisted of 30 ZIP detectors, totaling approximately 1.1 kg of Si and 4.8 kg of Ge, operated at temperatures of 50 mK. The ZIP detectors read out both ionization and phonon pulses from scatters within the crystals; channel segmentation and analysis of pulse timing parameters allowed e ective ducialization of the crystal volumes and background rejection su cient to set world-leading limits at the times of their publications. A full re-analysis of the CDMS-II data was motivated by an improvement in the event reconstruction algorithms which improved the resolution of ionization energy and timing information. The Ge data were re-analyzed using three distinct background-rejection techniques; the Si data from runs 125 - 128 were analyzed for the rst time using the most successful of the techniques from the Ge re-analysis. The results of these analyses prompted a novel \\mid-threshold" analysis, wherein energy thresholds were lowered but background rejection using phonon timing information was still maintained. This technique proved to have signi cant discrimination power, maintaining adequate signal acceptance and minimizing background leakage. The primary background for CDMS-II analyses comes from surface events, whose poor ionization collection make them di cult to distinguish from true nuclear recoil events. The novel detector technology of SuperCDMS, the successor to CDMS-II, uses interleaved electrodes to achieve full ionization collection for events occurring at the top and bottom detector surfaces. This, along with dual-sided ionization and phonon instrumentation, allows for excellent ducialization and relegates the surface-event rejection techniques of CDMS-II to a secondary level of background discrimination. Current and future SuperCDMS results hold great promise for mid- to low

  12. The Topo-trigger: A new stereo trigger for lowering the energy threshold of IACTs

    CERN Document Server

    López-Coto, R; Paoletti, R; Blanch, O; Cortina, J

    2015-01-01

    The purpose of the hardware presented in this contribution is to decrease the energy threshold of the MAGIC telescopes without significantly increasing the data acquisition rate. To achieve this purpose, we developed an additional level of trigger that relies on the location in both MAGIC cameras where the trigger is issued to rule out accidental events. This allows to decrease the Discriminator Threshold (DT), which results in a reduction of the energy threshold of the instrument. We simulated the Topo-trigger concept using the standard MAGIC Monte Carlo (MC) and tested it with real telescope data. In this paper we show the concept and results of these tests.

  13. Proposed high voltage power supply for the ITER relevant lower hybrid current drive system

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, P.K., E-mail: pramod@ipr.res.in [Institute for Plasma Research, Bhat, Gandhinagar, Gujarat (India); Kazarian, F.; Garibaldi, P.; Gassman, T. [ITER Organization, CS 90 046, 13067 Saint-Paul-Les-Durance (France); Artaud, J.F. [CEA, IRFM, F-13108 Saint-Paul-lez-Durance (France); Bae, Y.S. [National Fusion Research Institute, Daejeon (Korea, Republic of); Belo, J. [Associacao Euratom-IST, Centro de Fusao Nuclear, Lisboa (Portugal); Berger-By, G.; Bernard, J.M.; Cara, Ph. [CEA, IRFM, F-13108 Saint-Paul-lez-Durance (France); Cardinali, A.; Castaldo, C.; Ceccuzzi, S.; Cesario, R. [Associazione Euratom-ENEA sulla Fusione, CR Frascati, Rome (Italy); Decker, J.; Delpech, L.; Ekedahl, A.; Garcia, J.; Goniche, M.; Guilhem, D. [CEA, IRFM, F-13108 Saint-Paul-lez-Durance (France)

    2011-10-15

    In the framework of the EFDA task HCD-08-03-01, the ITER lower hybrid current drive (LHCD) system design has been reviewed. The system aims to generate 24 MW of RF power at 5 GHz, of which 20 MW would be coupled to the plasmas. The present state of the art does not allow envisaging a unitary output of the klystrons exceeding 500 kW, so the project is based on 48 klystron units, leaving some margin when the transmission lines losses are taken into account. A high voltage power supply (HVPS), required to operate the klystrons, is proposed. A single HVPS would be used to feed and operate four klystrons in parallel configuration. Based on the above considerations, it is proposed to design and develop twelve HVPS, based on pulse step modulator (PSM) technology, each rated for 90 kV/90 A. This paper describes in details, the typical electrical requirements and the conceptual design of the proposed HVPS for the ITER LHCD system.

  14. Tactile, thermal, and electrical thresholds in patients with and without phantom limb pain after traumatic lower limb amputation

    Directory of Open Access Journals (Sweden)

    Li S

    2015-04-01

    Full Text Available Shengai Li,1,2 Danielle H Melton,1,2 Sheng Li1,2 1Department of Physical Medicine and Rehabilitation, University of Texas Health Science Center at Houston, Houston, TX, USA; 2Neurorehabilitation Research Laboratory, TIRR Memorial Hermann Research Center, Houston, TX, USA Purpose: To examine whether there is central sensitization in patients with phantom limb pain (PLP after traumatic limb amputation. Methods: Seventeen patients after unilateral lower limb amputation secondary to trauma were enrolled. Ten patients had chronic PLP, while the other seven patients had no PLP. Tactile-sensation threshold, cold- and warm-sensation thresholds, cold- and heat-pain thresholds, electrical-sensation threshold (EST, and electrical-pain threshold on the distal residual limb and the symmetrical site on the sound limb were measured in all tested patients. Their thresholds were compared within the PLP and non-PLP group, and between the groups. Results: The novel findings included: 1 electrical-pain threshold was only decreased in the sound limb in the PLP group and there was no difference between two limbs in the non-PLP group, suggesting central sensitization in patients with PLP; and 2 EST was increased on the affected limb as compared to the sound limb within the PLP group, but there were no significant differences in EST between the PLP and non-PLP group. There were in general no significant differences in other tested thresholds within the groups and between groups. Conclusion: Our results demonstrate central sensitization in the patients with PLP after traumatic limb amputation. Keywords: central sensitization, pain threshold, human

  15. Threshold intensity factors as lower boundaries for crack propagation in ceramics

    Directory of Open Access Journals (Sweden)

    Walter Per-Ole

    2004-11-01

    Full Text Available Abstract Background Slow crack growth can be described in a v (crack velocity versus KI (stress intensity factor diagram. Slow crack growth in ceramics is attributed to corrosion assisted stress at the crack tip or at any pre-existing defect in the ceramic. The combined effect of high stresses at the crack tip and the presence of water or body fluid molecules (reducing surface energy at the crack tip induces crack propagation, which eventually may result in fatigue. The presence of a threshold in the stress intensity factor, below which no crack propagation occurs, has been the subject of important research in the last years. The higher this threshold, the higher the reliability of the ceramic, and consequently the longer its lifetime. Methods We utilize the Irwin K-field displacement relation to deduce crack tip stress intensity factors from the near crack tip profile. Cracks are initiated by indentation impressions. The threshold stress intensity factor is determined as the time limit of the tip stress intensity when the residual stresses have (nearly disappeared. Results We determined the threshold stress intensity factors for most of the all ceramic materials presently important for dental restorations in Europe. Of special significance is the finding that alumina ceramic has a threshold limit nearly identical with that of zirconia. Conclusion The intention of the present paper is to stress the point that the threshold stress intensity factor represents a more intrinsic property for a given ceramic material than the widely used toughness (bend strength or fracture toughness, which refers only to fast crack growth. Considering two ceramics with identical threshold limits, although with different critical stress intensity limits, means that both ceramics have identical starting points for slow crack growth. Fast catastrophic crack growth leading to spontaneous fatigue, however, is different. This growth starts later in those ceramic materials

  16. LTPS-TFT Pixel Circuit Compensating for TFT Threshold Voltage Shift and IR-Drop on the Power Line for AMOLED Displays

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2012-01-01

    Full Text Available We propose a new pixel design for the active matrix organic light-emitting diode (AMOLED using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs. The proposed pixel is composed of four switching TFTs, one driving TFT (DTFT, and one capacitor. The simulation results are performed by AIM-SPICE software. The error rate of OLED output current with (threshold voltage variation (0.3 V and power line drop by 1 V are improved to about 1.67% and 15%, respectively. Thus, the proposed pixel circuit can successfully overcome drawbacks suffered from DTFT threshold voltage deviation and IR-drop on power line.

  17. Interplay between low threshold voltage-gated K+ channels and synaptic inhibition in neurons of the chicken nucleus laminaris along its frequency axis

    OpenAIRE

    William eHamlet; Yu-Wei eLiu; Zhengquang eTang; Yong eLu

    2014-01-01

    Central auditory neurons that localize sound in horizontal space have specialized intrinsic and synaptic cellular mechanisms to tightly control the threshold and timing for action potential generation. However, the critical interplay between intrinsic voltage-gated conductances and extrinsic synaptic conductances in determining neuronal output are not well understood. In chicken, neurons in the nucleus laminaris (NL) encode sound location using interaural time difference (ITD) as a cue. Along...

  18. Pyogenic Arthritis of the Ankle Joint Following a High-Voltage Electrical Burn in the Lower Extremity: A Case Report

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kuk Seon; Lee, Gyung Kyu; Kang, Ik Won; Hwang, Dae Hyun; Lee, Eil Seong; Min, Seon Jung; Han, You Mie [Dept. of Radiology, Hangang Scared Heart Hospital, Hallym University College of Medicine, Seoul (Korea, Republic of); Lee, Eil Seong [Dept.of Radiology, Gyeongju Hospital, Dongguk University College of Medicine, Gyeongju (Korea, Republic of)

    2011-04-15

    A high-voltage electrical burn caused extensive deep muscle injuries beneath a relatively small skin wound at the contact point. Hidden, undetected deep muscle injuries have a tendency for progressive tissue necrosis, which can lead to major amputations or sepsis. The radiologic features of this rare, sometimes life-threatening injury have occasionally been described in the literature. However, to the best of our knowledge, there have been no reports on a case of pyogenic arthritis of the ankle joint following a high-voltage electrical burn involving the lower extremity. We report a case of the pyogenic arthritis of the ankle joint following a high-voltage electrical burn involving the lower extremity.

  19. Effects of controlling the interface trap densities in InGaZnO thin-film transistors on their threshold voltage shifts

    Science.gov (United States)

    Jeong, S.-W.; Lee, J.-T.; Roh, Y.

    2014-12-01

    In this paper, the threshold voltage stability characteristics of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFT) are discussed. The IGZO TFTs were found to induce a parallel threshold voltage ( V th ) shift with changing field effect mobility ( μ FE ) or a sub-threshold gate voltage swing ( SS) due to various thermal annealing conditions. The IGZO TFT that was post-annealed in an O2 ambient was found to be more stable for use in oxide-based TFT devices and to have better performance characteristics, such as the on/off current ratio ( I on/off ), SS, and V th , than other TFTs did. The mechanism for improving the V th stability in the post-annealed IGZO TFT is a decrease in the number of trap sites for the electrons and the weak oxygen bonding in the IGZO thin films. The device's performance could be significantly affected by adjusting the annealing conditions. This mechanism is closely related to that of modulation annealing, where the number of localized trapped carriers and defect centers at the interface or in the channel layer are reduced.

  20. Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN-GaN metal oxide semiconductor high electron mobility transistors on Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Alexewicz, A., E-mail: alexander.alexewicz@tuwien.ac.at [Vienna University of Technology, Floragasse 7, 1040 Vienna (Austria); Ostermaier, C.; Henkel, C.; Bethge, O. [Vienna University of Technology, Floragasse 7, 1040 Vienna (Austria); Carlin, J.-F.; Lugani, L.; Grandjean, N. [Ecole Polytechnique Federale de Lausanne, Station 3, 1015 Lausanne (Switzerland); Bertagnolli, E.; Pogany, D.; Strasser, G. [Vienna University of Technology, Floragasse 7, 1040 Vienna (Austria)

    2012-07-31

    We present enhancement-mode GaN high electron mobility transistors on Si substrates with ZrO{sub 2} gate dielectrics of thicknesses t{sub ox} between 10 and 24 nm. The oxide interlayers between the InAlN/AlN barrier and gate metal allow raising the device threshold voltage up to + 2.3 V and reduce gate leakage current to less than 100 nA/mm with a high drain current on/off ratio of 4 orders of magnitude. We use a model that explains the observed linear dependence of the threshold voltage on t{sub ox} and allows determining fixed charges at the oxide/barrier interface. - Highlights: Black-Right-Pointing-Pointer Enhancement-mode InAlN/AlN-GaN high electron mobility transistor (HEMT) Black-Right-Pointing-Pointer Metal oxide semiconductor HEMT with ZrO{sub 2} gate oxide Black-Right-Pointing-Pointer Linear decrease of threshold voltage with increasing gate oxide thickness Black-Right-Pointing-Pointer A model explaining that dependence is presented. Black-Right-Pointing-Pointer This model allows determining fixed charges at the InAlN/ZrO{sub 2} interface.

  1. SEMICONDUCTOR INTEGRATED CIRCUITS: A current-mode voltage regulator with an embedded sub-threshold reference for a passive UHF RFID transponder

    Science.gov (United States)

    Zhongqi, Liu; Chun, Zhang; Yongming, Li; Zhihua, Wang

    2010-06-01

    This paper presents a current-mode voltage regulator for a passive UHF RFID transponder. The passive tag power is extracted from RF energy through the RF-to-DC rectifier. Due to huge variations of the incoming RF power, the rectifier output voltage should be regulated to achieve a stable power supply. By accurately controlling the current flowing into the load with an embedded sub-threshold reference, the regulated voltage varies in a range of 1-1.3 V from -20 to 80 °C, and a bandwidth of about 100 kHz is achieved for a fast power recovery. The circuit is fabricated in UMC 0.18 μm mixed-mode CMOS technology, and the current consumption is only 1 μA.

  2. Mitigation of Lower Order Harmonics with Filtered Svpwm In Multiphase Voltage Source Inverters

    Directory of Open Access Journals (Sweden)

    K. Uday Kiran

    2014-08-01

    Full Text Available Multi-phase machines and drives is a topic of growing relevance in recent years, and it presents many challenging issues that still need further research. This is the case of multi-phase space vector pulse width modulation (SVPWM, which shows not only more space vectors than the standard three-phase case, but also new subspaces where the space vectors are mapped. In the digital implementation, multiphase reference voltages are sampled and fed into the digital modulator to produce gating signals at a constant clock rate f. This means a finite pulse-width resolution because the gating state transition can only occur at some specific time instants depending on frequency. This results in a deviation of produced phase voltages from the desired phase voltages, i.e., increasing harmonic distortion especially for a small modulation index signal. In the present paper a filtered space-vector pulse-width modulation (SVPWM considering finite pulse-width resolution is proposed to produce a switching sequence with reduced baseband harmonics for multiphase voltage source inverters (VSI. This is achieved by incorporating a pseudo feedback loop regarding weighted voltage difference between desired and produced phase voltages.

  3. 40 CFR 372.28 - Lower thresholds for chemicals of special concern.

    Science.gov (United States)

    2010-07-01

    ...-62,3,7,8 Tetrachlorodibenzo-p-dioxin Mercury compounds 10 Polycyclic aromatic compounds (PACs) (This... alphabetic order. Category name Reporting threshold Dioxin and dioxin-like compounds (Manufacturing; and the processing or otherwise use of dioxin and dioxin-like compounds if the dioxin and dioxin-like compounds...

  4. Lower thresholds for lifetime health effects in mammals from high-LET radiation - Comparison with chronic low-LET radiation.

    Science.gov (United States)

    Sazykina, Tatiana G; Kryshev, Alexander I

    2016-12-01

    Lower threshold dose rates and confidence limits are quantified for lifetime radiation effects in mammalian animals from internally deposited alpha-emitting radionuclides. Extensive datasets on effects from internal alpha-emitters are compiled from the International Radiobiological Archives. In total, the compiled database includes 257 records, which are analyzed by means of non-parametric order statistics. The generic lower threshold for alpha-emitters in mammalian animals (combined datasets) is 6.6·10(-5) Gy day(-1). Thresholds for individual alpha-emitting elements differ considerably: plutonium and americium - 2.0·10(-5) Gy day(-1); radium - 2.1·10(-4) Gy day(-1). Threshold for chronic low-LET radiation is previously estimated at 1·10(-3) Gy day(-1). For low exposures, the following values of alpha radiation weighting factor wR for internally deposited alpha-emitters in mammals are quantified: wR(α) = 15 as a generic value for the whole group of alpha-emitters; wR(Pu) = 50 for plutonium; wR(Am) = 50 for americium; wR(Ra) = 5 for radium. These values are proposed to serve as radiation weighting factors in calculations of equivalent doses to non-human biota. The lower threshold dose rate for long-lived mammals (dogs) is significantly lower than comparing with the threshold for short-lived mammals (mice): 2.7·10(-5) Gy day(-1), and 2.0·10(-4) Gy day(-1), respectively. The difference in thresholds is exactly reflecting the relationship between the natural longevity of these two species. Graded scale of severity in lifetime radiation effects in mammals is developed, based on compiled datasets. Being placed on the severity scale, the effects of internal alpha-emitters are situated in the zones of considerably lower dose rates than effects of the same severity caused by low-LET radiation. RBE values, calculated for effects of equal severity, are found to depend on the intensity of chronic exposure: different RBE values are characteristic for low

  5. 4H-SiC trench IGBT with lower on-state voltage drop

    Science.gov (United States)

    Liu, Yan-juan; Wang, Ying; Yu, Cheng-hao; Fei-Cao

    2017-03-01

    In this paper, a new 4H-SiC trench-gate IGBT structure incorporated a P+ shielding region in the emitter side is proposed in order to reduce the on-state voltage drop. Through the 2-D ATLAS simulation, the characteristics of the proposed structure are investigated and compared with the conventional structure. The simulation results indicate that the proposed structure exhibits an improvement in the following. Firstly, the on-state voltage drop is reduced by 32.75%. Secondly, the differential specific on-resistance is reduced by 42.33%. Finally, under the same on-state voltage drop, the turn-off energy is reduced more than 50.00%. At the end of the paper, it is explored that what effects the physical parameter of the P+ shielding region in the proposed structure have on the steady state performances.

  6. [Examination of reducing misregistration for lower tube voltage of the mask image in CT angiography using subtraction method].

    Science.gov (United States)

    Nakatani, Kasumi; Fukunishi, Yasunobu

    2015-05-01

    Computed tomographic angiography (CTA) has been used recently for the evaluation of intracerebral aneurysms, but it is difficult to use this technique to visualize aneurysms near the base of the skull because of the presence of bone. So, subtracted CTA has been used to separate vessels from bony structures. However, we see some misregistration when using subtraction method because of the patient moving, the disaccord of the X-ray tube orbit between the mask image and the live image, the expanding focus, and the bed bending. So, attentioning the difference of bone CT number in any tube voltages, we examined to make the image containing less misregistration by changing the tube voltage of mask image. Making a sham blood vessel, we examined the bone misregistration, the blood vessel volume, and the smoothness when changing the tube voltages of mask images. Comparing with 120 kV, as the tube voltage of the mask image was 80 kV, the bone misregistration decreased significantly, however the blood vessel volume decreased. As for the tube voltage of 100 kV, the bone misregistration decreased significantly, and the blood vessel volume and the smoothness were not significantly different so we could get coordinative image of 120 kV. When the tube voltage of the mask image becomes lower than that of the live image and the effective energy becomes different, the effect of misregistration is less. This method deals with changing the tube voltage only. So, it may be easy to make volume rendering (VR) image and this method may be used in every facility.

  7. Lowering IceCube's Energy Threshold for Point Source Searches in the Southern Sky

    CERN Document Server

    Aartsen, M G; Ackermann, M; Adams, J; Aguilar, J A; Ahlers, M; Ahrens, M; Altmann, D; Andeen, K; Anderson, T; Ansseau, I; Anton, G; Archinger, M; Arguelles, C; Arlen, T C; Auffenberg, J; Axani, S; Bai, X; Barwick, S W; Baum, V; Bay, R; Beatty, J J; Tjus, J Becker; Becker, K -H; BenZvi, S; Berghaus, P; Berley, D; Bernardini, E; Bernhard, A; Besson, D Z; Binder, G; Bindig, D; Bissok, M; Blaufuss, E; Blot, S; Boersma, D J; Bohm, C; Börner, M; Bos, F; Bose, D; Böser, S; Botner, O; Braun, J; Brayeur, L; Bretz, H -P; Burgman, A; Buzinsky, N; Casey, J; Casier, M; Cheung, E; Chirkin, D; Christov, A; Clark, K; Classen, L; Coenders, S; Collin, G H; Conrad, J M; Cowen, D F; Silva, A H Cruz; Daughhetee, J; Davis, J C; Day, M; de André, J P A M; De Clercq, C; Rosendo, E del Pino; Dembinski, H; De Ridder, S; Desiati, P; de Vries, K D; de Wasseige, G; de With, M; DeYoung, T; Díaz-Vélez, J C; di Lorenzo, V; Dujmovic, H; Dumm, J P; Dunkman, M; Eberhardt, B; Ehrhardt, T; Eichmann, B; Euler, S; Evenson, P A; Fahey, S; Fazely, A R; Feintzeig, J; Felde, J; Filimonov, K; Finley, C; Flis, S; Fösig, C -C; Fuchs, T; Gaisser, T K; Gaior, R; Gallagher, J; Gerhardt, L; Ghorbani, K; Gladstone, L; Glagla, M; Glüsenkamp, T; Goldschmidt, A; Golup, G; Gonzalez, J G; Góra, D; Grant, D; Griffith, Z; Ha, C; Haack, C; Ismail, A Haj; Hallgren, A; Halzen, F; Hansen, E; Hansmann, B; Hansmann, T; Hanson, K; Hebecker, D; Heereman, D; Helbing, K; Hellauer, R; Hickford, S; Hignight, J; Hill, G C; Hoffman, K D; Hoffmann, R; Holzapfel, K; Homeier, A; Hoshina, K; Huang, F; Huber, M; Huelsnitz, W; Hultqvist, K; In, S; Ishihara, A; Jacobi, E; Japaridze, G S; Jeong, M; Jero, K; Jones, B J P; Jurkovic, M; Kappes, A; Karg, T; Karle, A; Katz, U; Kauer, M; Keivani, A; Kelley, J L; Kemp, J; Kheirandish, A; Kim, M; Kintscher, T; Kiryluk, J; Klein, S R; Kohnen, G; Koirala, R; Kolanoski, H; Konietz, R; Köpke, L; Kopper, C; Kopper, S; Koskinen, D J; Kowalski, M; Krings, K; Kroll, M; Krückl, G; Krüger, C; Kunnen, J; Kunwar, S; Kurahashi, N; Kuwabara, T; Labare, M; Lanfranchi, J L; Larson, M J; Lennarz, D; Lesiak-Bzdak, M; Leuermann, M; Leuner, J; Lu, L; Lünemann, J; Madsen, J; Maggi, G; Mahn, K B M; Mancina, S; Mandelartz, M; Maruyama, R; Mase, K; Matis, H S; Maunu, R; McNally, F; Meagher, K; Medici, M; Meier, M; Meli, A; Menne, T; Merino, G; Meures, T; Miarecki, S; Middell, E; Mohrmann, L; Montaruli, T; Moulai, M; Nahnhauer, R; Naumann, U; Neer, G; Niederhausen, H; Nowicki, S C; Nygren, D R; Pollmann, A Obertacke; Olivas, A; Omairat, A; O'Murchadha, A; Palczewski, T; Pandya, H; Pankova, D V; Penek, Ö; Pepper, J A; Heros, C Pérez de los; Pfendner, C; Pieloth, D; Pinat, E; Posselt, J; Price, P B; Przybylski, G T; Quinnan, M; Raab, C; Rädel, L; Rameez, M; Rawlins, K; Reimann, R; Relich, M; Resconi, E; Rhode, W; Richman, M; Riedel, B; Robertson, S; Rongen, M; Rott, C; Ruhe, T; Ryckbosch, D; Rysewyk, D; Sabbatini, L; Sandrock, A; Sandroos, J; Sarkar, S; Satalecka, K; Schimp, M; Schlunder, P; Schmidt, T; Schoenen, S; Schöneberg, S; Schönwald, A; Schumacher, L; Seckel, D; Seunarine, S; Soldin, D; Song, M; Spiczak, G M; Spiering, C; Stahlberg, M; Stamatikos, M; Stanev, T; Stasik, A; Steuer, A; Stezelberger, T; Stokstad, R G; Stößl, A; Ström, R; Strotjohann, N L; Sullivan, G W; Sutherland, M; Taavola, H; Taboada, I; Tatar, J; Ter-Antonyan, S; Terliuk, A; Tešić, G; Tilav, S; Toale, P A; Tobin, M N; Toscano, S; Tosi, D; Tselengidou, M; Turcati, A; Unger, E; Usner, M; Vallecorsa, S; Vandenbroucke, J; van Eijndhoven, N; Vanheule, S; van Rossem, M; van Santen, J; Veenkamp, J; Vehring, M; Voge, M; Vraeghe, M; Walck, C; Wallace, A; Wallraff, M; Wandkowsky, N; Weaver, Ch; Wendt, C; Westerhoff, S; Whelan, B J; Wickmann, S; Wiebe, K; Wiebusch, C H; Wille, L; Williams, D R; Wills, L; Wissing, H; Wolf, M; Wood, T R; Woschnagg, K; Xu, D L; Xu, X W; Xu, Y; Yanez, J P; Yodh, G; Yoshida, S; Zoll, M

    2016-01-01

    Observation of a point source of astrophysical neutrinos would be a "smoking gun" signature of a cosmic-ray accelerator. While IceCube has recently discovered a diffuse flux of astrophysical neutrinos, no localized point source has been observed. Previous IceCube searches for point sources in the southern sky were restricted by either an energy threshold above a few hundred TeV or poor neutrino angular resolution. Here we present a search for southern sky point sources with greatly improved sensitivities to neutrinos with energies below 100 TeV. By selecting charged-current $\

  8. Lowering of the cavitation threshold in aqueous suspensions of porous silicon nanoparticles for sonodynamic therapy applications

    Energy Technology Data Exchange (ETDEWEB)

    Sviridov, A. P., E-mail: asagittarius89@gmail.com; Osminkina, L. A. [Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow (Russian Federation); Nikolaev, A. L. [Faculty of Chemistry, Lomonosov Moscow State University, 119991 Moscow (Russian Federation); Kudryavtsev, A. A. [Institute of Theoretical and Experimental Biophysics, Russian Academy of Science, 142290 Pushino, Moscow Region (Russian Federation); Vasiliev, A. N. [Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow (Russian Federation); Theoretical Physics and Applied Mathematics Department, Ural Federal University, 620002 Ekaterinburg (Russian Federation); Timoshenko, V. Yu. [Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow (Russian Federation); Tomsk State University, 634050 Tomsk (Russian Federation)

    2015-09-21

    A significant decrease of the cavitation threshold in aqueous suspensions of porous silicon nanoparticles (PSi NPs) with sizes about 100 nm as compared with pure water was observed for ultrasound irradiation (USI) with therapeutic frequency (0.88 MHz) and intensities (about 1 W/cm{sup 2}). This effect is explained by porous morphology of PSi NPs, which promotes the nucleation of cavitation bubbles. In vitro experiments revealed a suppression of the proliferation of cancer cells with the introduced PSi NPs after exposure to USI related to the enhanced cavitation processes, which led to the cell destruction. The obtained results demonstrate that PSi NPs are prospective for applications as sonosensitizers in mild cancer therapy.

  9. Bilateral Lower Limb Amputations in a Nigerian Child Following High-Voltage Electrical Burns Injury: A Case Report

    OpenAIRE

    Dim, EM; Amanari, OC; Nottidge, TE; Inyang, UC; Nwashindi, A

    2013-01-01

    Abstract The human body conducts electricity very well. Direct contact with electric current can be lethal. The passage of electric current through the body is capable of producing a wide spectrum of injuries, including serious damage to the heart, brain, skin and muscles. Naked high-voltage electric cables negligently abandoned in residential, commercial and industrial areas are a recipe for disaster. This is a case report of a 5-year girl child who had bilateral lower limb gangrene followin...

  10. Current-voltage characteristics with several threshold currents in insulating low-doped La1-xSrxMnO3 (x=0.10) thin films

    Institute of Scientific and Technical Information of China (English)

    ZHAO Kun; FENG Jiafeng; HE Meng; L(U) Huibin; JIN Kuijuan; ZHOU Yueliang; YANG Guozhen3

    2008-01-01

    The current-induced resistive switching behavior in the micron-scale pillars of low-doped La0.9Sr0.1MnO3 thin films using laser molecular-beam epitaxy was reported. It was demonstrated that the current-voltage curves at 120 K showed hysteresis with several threshold currents corresponding to the switching in resistance to metastable low resistance states, and finally, four closed loops were formed. A mode was proposed, which was based on the low-temperature canted antiferromagnetism ordering for a lightly doped insulating regime.

  11. Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

    Science.gov (United States)

    Ghaffarzadeh, Khashayar; Nathan, Arokia; Robertson, John; Kim, Sangwook; Jeon, Sanghun; Kim, Changjung; Chung, U.-In; Lee, Je-Hun

    2010-09-01

    Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (ΔVT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths.

  12. Higher serum aldosterone correlates with lower hearing thresholds: a possible protective hormone against presbycusis.

    Science.gov (United States)

    Tadros, Sherif F; Frisina, Susan T; Mapes, Frances; Frisina, D Robert; Frisina, Robert D

    2005-11-01

    Aldosterone hormone is a mineralocorticoid secreted by adrenal gland cortex and controls serum sodium (Na(+)) and potassium (K(+)) levels. Aldosterone has a stimulatory effect on expression of sodium-potassium ATPase (Na, K-ATPase) and sodium-potassium-chloride cotransporter (NKCC) in cell membranes. In the present investigation, the relation between serum aldosterone levels and age-related hearing loss (presbycusis) and the correlation between these levels versus the degree of presbycusis in humans were examined. Serum aldosterone concentrations were compared between normal hearing and presbycusic groups. Pure-tone audiometry, transient evoked otoacoustic emissions (TEOAE), hearing in noise test (HINT) and gap detection were tested for each subject and compared to the serum aldosterone levels. A highly significant difference between groups in serum aldosterone concentrations was found (p = 0.0003, t = 3.95, df = 45). Highly significant correlations between pure-tone thresholds in both right and left ears, and HINT scores versus serum aldosterone levels were also discovered. On the contrary, no significant correlations were seen in the case of TEOAEs and gap detection. We conclude that aldosterone hormone may have a protective effect on hearing in old age. This effect is more peripheral than central, appearing to affect inner hair cells more than outer hair cells.

  13. Lowering IceCube's Energy Threshold for Point Source Searches in the Southern Sky

    Science.gov (United States)

    Aartsen, M. G.; Abraham, K.; Ackermann, M.; Adams, J.; Aguilar, J. A.; Ahlers, M.; Ahrens, M.; Altmann, D.; Andeen, K.; Anderson, T.; Ansseau, I.; Anton, G.; Archinger, M.; Arguelles, C.; Arlen, T. C.; Auffenberg, J.; Bai, X.; Barwick, S. W.; Baum, V.; Bay, R.; Beatty, J. J.; Becker Tjus, J.; Becker, K.-H.; BenZvi, S.; Berghaus, P.; Berley, D.; Bernardini, E.; Bernhard, A.; Besson, D. Z.; Binder, G.; Bindig, D.; Bissok, M.; Blaufuss, E.; Blot, S.; Boersma, D. J.; Bohm, C.; Börner, M.; Bos, F.; Bose, D.; Böser, S.; Botner, O.; Braun, J.; Brayeur, L.; Bretz, H.-P.; Burgman, A.; Buzinsky, N.; Casey, J.; Casier, M.; Cheung, E.; Chirkin, D.; Christov, A.; Clark, K.; Classen, L.; Coenders, S.; Collin, G. H.; Conrad, J. M.; Cowen, D. F.; Cruz Silva, A. H.; Daughhetee, J.; Davis, J. C.; Day, M.; de André, J. P. A. M.; De Clercq, C.; del Pino Rosendo, E.; Dembinski, H.; De Ridder, S.; Desiati, P.; de Vries, K. D.; de Wasseige, G.; de With, M.; DeYoung, T.; Díaz-Vélez, J. C.; di Lorenzo, V.; Dujmovic, H.; Dumm, J. P.; Dunkman, M.; Eberhardt, B.; Ehrhardt, T.; Eichmann, B.; Euler, S.; Evenson, P. A.; Fahey, S.; Fazely, A. R.; Feintzeig, J.; Felde, J.; Filimonov, K.; Finley, C.; Flis, S.; Fösig, C.-C.; Fuchs, T.; Gaisser, T. K.; Gaior, R.; Gallagher, J.; Gerhardt, L.; Ghorbani, K.; Gladstone, L.; Glagla, M.; Glüsenkamp, T.; Goldschmidt, A.; Golup, G.; Gonzalez, J. G.; Góra, D.; Grant, D.; Griffith, Z.; Ha, C.; Haack, C.; Haj Ismail, A.; Hallgren, A.; Halzen, F.; Hansen, E.; Hansmann, B.; Hansmann, T.; Hanson, K.; Hebecker, D.; Heereman, D.; Helbing, K.; Hellauer, R.; Hickford, S.; Hignight, J.; Hill, G. C.; Hoffman, K. D.; Hoffmann, R.; Holzapfel, K.; Homeier, A.; Hoshina, K.; Huang, F.; Huber, M.; Huelsnitz, W.; Hultqvist, K.; In, S.; Ishihara, A.; Jacobi, E.; Japaridze, G. S.; Jeong, M.; Jero, K.; Jones, B. J. P.; Jurkovic, M.; Kappes, A.; Karg, T.; Karle, A.; Katz, U.; Kauer, M.; Keivani, A.; Kelley, J. L.; Kemp, J.; Kheirandish, A.; Kim, M.; Kintscher, T.; Kiryluk, J.; Klein, S. R.; Kohnen, G.; Koirala, R.; Kolanoski, H.; Konietz, R.; Köpke, L.; Kopper, C.; Kopper, S.; Koskinen, D. J.; Kowalski, M.; Krings, K.; Kroll, M.; Krückl, G.; Krüger, C.; Kunnen, J.; Kunwar, S.; Kurahashi, N.; Kuwabara, T.; Labare, M.; Lanfranchi, J. L.; Larson, M. J.; Lennarz, D.; Lesiak-Bzdak, M.; Leuermann, M.; Leuner, J.; Lu, L.; Lünemann, J.; Madsen, J.; Maggi, G.; Mahn, K. B. M.; Mancina, S.; Mandelartz, M.; Maruyama, R.; Mase, K.; Matis, H. S.; Maunu, R.; McNally, F.; Meagher, K.; Medici, M.; Meier, M.; Meli, A.; Menne, T.; Merino, G.; Meures, T.; Miarecki, S.; Middell, E.; Mohrmann, L.; Montaruli, T.; Nahnhauer, R.; Naumann, U.; Neer, G.; Niederhausen, H.; Nowicki, S. C.; Nygren, D. R.; Obertacke Pollmann, A.; Olivas, A.; Omairat, A.; O'Murchadha, A.; Palczewski, T.; Pandya, H.; Pankova, D. V.; Penek, Ö.; Pepper, J. A.; Pérez de los Heros, C.; Pfendner, C.; Pieloth, D.; Pinat, E.; Posselt, J.; Price, P. B.; Przybylski, G. T.; Quinnan, M.; Raab, C.; Rädel, L.; Rameez, M.; Rawlins, K.; Reimann, R.; Relich, M.; Resconi, E.; Rhode, W.; Richman, M.; Riedel, B.; Robertson, S.; Rongen, M.; Rott, C.; Ruhe, T.; Ryckbosch, D.; Sabbatini, L.; Sandrock, A.; Sandroos, J.; Sarkar, S.; Satalecka, K.; Schimp, M.; Schlunder, P.; Schmidt, T.; Schoenen, S.; Schöneberg, S.; Schönwald, A.; Schumacher, L.; Seckel, D.; Seunarine, S.; Soldin, D.; Song, M.; Spiczak, G. M.; Spiering, C.; Stahlberg, M.; Stamatikos, M.; Stanev, T.; Stasik, A.; Steuer, A.; Stezelberger, T.; Stokstad, R. G.; Stößl, A.; Ström, R.; Strotjohann, N. L.; Sullivan, G. W.; Sutherland, M.; Taavola, H.; Taboada, I.; Tatar, J.; Ter-Antonyan, S.; Terliuk, A.; Tešić, G.; Tilav, S.; Toale, P. A.; Tobin, M. N.; Toscano, S.; Tosi, D.; Tselengidou, M.; Turcati, A.; Unger, E.; Usner, M.; Vallecorsa, S.; Vandenbroucke, J.; van Eijndhoven, N.; Vanheule, S.; van Rossem, M.; van Santen, J.; Veenkamp, J.; Vehring, M.; Voge, M.; Vraeghe, M.; Walck, C.; Wallace, A.; Wallraff, M.; Wandkowsky, N.; Weaver, Ch.; Wendt, C.; Westerhoff, S.; Whelan, B. J.; Whitehorn, N.; Wickmann, S.; Wiebe, K.; Wiebusch, C. H.; Wille, L.; Williams, D. R.; Wills, L.; Wissing, H.; Wolf, M.; Wood, T. R.; Woschnagg, K.; Xu, D. L.; Xu, X. W.; Xu, Y.; Yanez, J. P.; Yodh, G.; Yoshida, S.; Zoll, M.; IceCube Collaboration

    2016-06-01

    Observation of a point source of astrophysical neutrinos would be a “smoking gun” signature of a cosmic-ray accelerator. While IceCube has recently discovered a diffuse flux of astrophysical neutrinos, no localized point source has been observed. Previous IceCube searches for point sources in the southern sky were restricted by either an energy threshold above a few hundred TeV or poor neutrino angular resolution. Here we present a search for southern sky point sources with greatly improved sensitivities to neutrinos with energies below 100 TeV. By selecting charged-current ν μ interacting inside the detector, we reduce the atmospheric background while retaining efficiency for astrophysical neutrino-induced events reconstructed with sub-degree angular resolution. The new event sample covers three years of detector data and leads to a factor of 10 improvement in sensitivity to point sources emitting below 100 TeV in the southern sky. No statistically significant evidence of point sources was found, and upper limits are set on neutrino emission from individual sources. A posteriori analysis of the highest-energy (˜100 TeV) starting event in the sample found that this event alone represents a 2.8σ deviation from the hypothesis that the data consists only of atmospheric background.

  14. High-precision Sub-threshold CMOS Voltage Reference with PVT Invariant%PVT恒定高精度亚阈值CMOS电压基准源

    Institute of Scientific and Technical Information of China (English)

    吴瑶; 龚敏; 高博

    2015-01-01

    The paper presents a pure CMOS high precision voltage reference circuit based on the sub-threshold MOSFETs with the SMIC 65 nm standard CMOS process technique. Three different types of NMOSFETs and further resister-less temperature compensation are used to reduce process, voltage and temperature(PVT)sensitivity. Simulation result shows that voltage and temperature varies have little effect on the current according different process corners(Vref variation is only ±1.36%). Temperature and power supply sensitivity of the reference voltage is 4.5×10-6℃-1(-500~1500℃)and 2.1% mV·V-1. In addition, the supply voltage is about 0.56 V.%提出一种基于SMIC 65 nm标准CMOS工艺库的高精度电压参考源电路。对3种不同类型偏置于亚阈值区的NMOSFET进行了讨论,采用无电阻温度补偿对温度进行高阶补偿,可以减小对工艺、电压、温度的敏感性。仿真结果表明:在不同工艺角下,电源电压、温度使基准电压Vref的变化仅为±1.36%。电压参考源的温度系数大约为4.5×10-6℃-1,电源线性调制率为2.1% mV·V-1,最小工作电压仅为0.56 V。

  15. 22q11.2 deletion syndrome lowers seizure threshold in adult patients without epilepsy.

    Science.gov (United States)

    Wither, Robert G; Borlot, Felippe; MacDonald, Alex; Butcher, Nancy J; Chow, Eva W C; Bassett, Anne S; Andrade, Danielle M

    2017-06-01

    Previous studies examining seizures in patients with 22q11.2 deletion syndrome (22q11.2DS) have focused primarily on children and adolescents. In this study we investigated the prevalence and characteristics of seizures and epilepsy in an adult 22q11.2DS population. The medical records of 202 adult patients with 22q11.2DS were retrospectively reviewed for documentation of seizures, electroencephalography (EEG) reports, and magnetic resonance imaging (MRI) findings. Epilepsy status was assigned in accordance with 2010 International League Against Epilepsy Classification. Of 202 patients, 32 (15.8%) had a documented history of seizure. Of these 32, 23 (71.8%) had acute symptomatic seizures, usually associated with hypocalcemia and/or antipsychotic or antidepressant use. Nine patients (9/32, 28%; 9/202, 4%) met diagnostic criteria for epilepsy. Two patients had genetic generalized epilepsy; two patients had focal seizures of unknown etiology; two had epilepsy due to malformations of cortical development; in two the epilepsy was due to acquired structural changes; and in one patient the epilepsy could not be further classified. Similarly to children, the prevalence of epilepsy and acute symptomatic seizures in adults with 22q11.2DS is higher than in the general population. Hypocalcemia continues to be a risk factor for adults, but differently from kids, the main cause of seizures in adults with 22q11.2DS is exposure to antipsychotics and antidepressants. Further prospective studies are warranted to investigate how 22q11.2 microdeletion leads to an overall decreased seizure threshold. Wiley Periodicals, Inc. © 2017 International League Against Epilepsy.

  16. Olfaction and environment: Tsimane' of Bolivian rainforest have lower threshold of odor detection than industrialized German people.

    Directory of Open Access Journals (Sweden)

    Agnieszka Sorokowska

    Full Text Available Olfactory sensitivity varies between individuals. However, data regarding cross-cultural and inter-group differences are scarce. We compared the thresholds of odor detection of the traditional society of Tsimane' (native Amazonians of the Bolivian rainforest; n = 151 and people living in Dresden (Germany; n = 286 using "Sniffin' Sticks" threshold subtest. Tsimane' detected n-butanol at significantly lower concentrations than the German subjects. The distribution of thresholds of the Tsimane' was very specific, with 25% of Tsimane' obtaining better results in the olfactory test than any member of the German group. These data suggest that differences in olfactory sensitivity seem to be especially salient between industrialized and non-industrialized populations inhabiting different environmental conditions. We hypothesize that the possible sources of such differences are: (i the impact of pollution which impairs the olfactory abilities of people from industrialized countries; (ii better training of olfaction because of the higher importance of smell in traditional populations; (iii environmental pressures shaping olfactory abilities in these populations.

  17. Depth of interaction and bias voltage depenence of the spectral response in a pixellated CdTe detector operating in time-over-threshold mode subjected to monochromatic X-rays

    Science.gov (United States)

    Fröjdh, E.; Fröjdh, C.; Gimenez, E. N.; Maneuski, D.; Marchal, J.; Norlin, B.; O'Shea, V.; Stewart, G.; Wilhelm, H.; Modh Zain, R.; Thungström, G.

    2012-03-01

    High stopping power is one of the most important figures of merit for X-ray detectors. CdTe is a promising material but suffers from: material defects, non-ideal charge transport and long range X-ray fluorescence. Those factors reduce the image quality and deteriorate spectral information. In this project we used a monochromatic pencil beam collimated through a 20μm pinhole to measure the detector spectral response in dependance on the depth of interaction. The sensor was a 1mm thick CdTe detector with a pixel pitch of 110μm, bump bonded to a Timepix readout chip operating in Time-Over-Threshold mode. The measurements were carried out at the Extreme Conditions beamline I15 of the Diamond Light Source. The beam was entering the sensor at an angle of \\texttildelow20 degrees to the surface and then passed through \\texttildelow25 pixels before leaving through the bottom of the sensor. The photon energy was tuned to 77keV giving a variation in the beam intensity of about three orders of magnitude along the beam path. Spectra in Time-over-Threshold (ToT) mode were recorded showing each individual interaction. The bias voltage was varied between -30V and -300V to investigate how the electric field affected the spectral information. For this setup it is worth noticing the large impact of fluorescence. At -300V the photo peak and escape peak are of similar height. For high bias voltages the spectra remains clear throughout the whole depth but for lower voltages as -50V, only the bottom part of the sensor carries spectral information. This is an effect of the low hole mobility and the longer range the electrons have to travel in a low field.

  18. Design and analysis of 32 bit CMOS adder using sub-threshold voltage at deep submicron technology

    Directory of Open Access Journals (Sweden)

    Kaur Jaspreet

    2016-01-01

    Full Text Available FA is basic cell for arithmetic operation and lots of efforts have put to minimize power consumption and delay. This paper evaluates conventional CMOS adder, bridge style adders in sub-threshold region. Circuits are designed at 20 MHz and 50 MHz frequencies with VDD= 200 mv. All adder designs are simulated at 32 nm technology. In 1 bit and 32 bit conventional CMOS adder design, an efficient trade-off between delay and power is achieved. Experimental results show that 32 bit adder designs have significant improvements in delay and power delay product.

  19. A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high- dielectric

    Institute of Scientific and Technical Information of China (English)

    Gopi Krishna Saramekala; Sarvesh Dubey; Pramod Kumar Tiwari

    2015-01-01

    In this paper, a surface potential based threshold voltage model of fully-depleted (FD) recessed-source/drain (Re-S/D) silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistor (MOSFET) is presented while considering the effects of high-k gate-dielectric material induced fringing-field. The two-dimensional (2D) Poisson’s equation is solved in a channel region in order to obtain the surface potential under the assumption of the parabolic potential profile in the trans-verse direction of the channel with appropriate boundary conditions. The accuracy of the model is verified by comparing the model’s results with the 2D simulation results from ATLAS over a wide range of channel lengths and other parameters, including the dielectric constant of gate-dielectric material.

  20. Formation of combined partially recessed and multiple fluorinated-dielectric layers gate structures for high threshold voltage GaN-based HEMT power devices

    Science.gov (United States)

    Huang, Huolin; Liang, Yung Chii

    2015-12-01

    The formation of partial AlGaN trench recess filled with multiple fluorinated gate dielectric layers as metal-insulator-semiconductor (MIS) gate structure for GaN-based HEMT power devices is designed, fabricated and experimentally verified. The approach realizes the device normally-off operational mode and at the same time is able to preserve the good mobility in the 2DEG channel for a maximum on-state current. Experimental measurements on the fabricated MIS-HEMT devices indicate a high gate threshold voltage (Vth) at around 5 V and a very low gate leakage current at pA/mm level. This proposed gate structure provides very promising properties for GaN-based power semiconductor devices in future power electronics switching applications.

  1. Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

    Science.gov (United States)

    Blaho, M.; Gregušová, D.; Haščík, Š.; Ťapajna, M.; Fröhlich, K.; Šatka, A.; Kuzmík, J.

    2017-07-01

    Threshold voltage instabilities are examined in self-aligned E/D-mode n++ GaN/InAlN/GaN MOS HEMTs with a gate length of 2 μm and a source-drain spacing of 10 μm integrated in a logic invertor. The E-mode MOS HEMT technology is based on selective dry etching of the cap layer which is combined with Al2O3 grown by atomic-layer deposition at 380 K. In the D-mode MOS HEMT, the gate recessing is skipped. The nominal threshold voltage (VT) of E/D-mode MOS HEMTs was 0.6 and -3.4 V, respectively; the technology invariant maximal drain current was about 0.45 A/mm. Analysis after 580 K/15 min annealing step and at an elevated temperature up to 430 K reveals opposite device behavior depending on the HEMT operational mode. It was found that the annealing step decreases VT of the D-mode HEMT due to a reduced electron injection into the modified oxide. On the other hand, VT of the E-mode HEMT increases with reduced density of surface donors at the oxide/InAlN interface. Operation at the elevated temperature produces reversible changes: increase/decrease in the VT of the respective D-/E-mode HEMTs. Additional bias-induced experiments exhibit complex trapping phenomena in the devices: Coaction of shallow (˜0.1 eV below EC) traps in the GaN buffer and deep levels at the oxide/InAlN interface was identified for the E-mode device, while trapping in the D-mode HEMTs was found to be consistent with a thermo-ionic injection of electrons into bulk oxide traps (˜0.14 eV above EF) and trapping at the oxide/GaN cap interface states.

  2. Frequency-locking and threshold current-lowering effects of quantum cascade laser and an application in gas detection field

    Institute of Scientific and Technical Information of China (English)

    陈伟根; 万福; 邹经鑫; 顾朝亮; 周渠

    2015-01-01

    In this paper, the frequency-locking and threshold current-lowering effects of quantum cascade laser are studied and achieved. Combined with cavity-enhanced absorption spectroscopy, the noninvasive detection of H2 with a pre-pared concentration of 500 ppm in multiple dissolved gases is performed and evaluated. The high frequency selectivity of 0.0051 cm−1 at an acquisition time of 1 s allows the sensitive detection of the (1-0) S(1) band of H2 with a high ac-curacy of (96.53±0.29)%and shows that the detection limit to an absorption line of 4712.9046 cm−1 is approximately (17.26±0.63) ppm at an atmospheric pressure and a temperature of 20◦C.

  3. Tunable electroluminescence from low-threshold voltage LED structure based on electrodeposited Zn{sub 1-x}Cd{sub x}O-nanorods/p-GaN heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Pauporte, T. [Laboratoire d' Electrochimie, Chimie des Interfaces et Modelisation pour l' Energie (LECIME), UMR 7575 CNRS, Chimie ParisTech, Paris (France); Lupan, O. [Laboratoire d' Electrochimie, Chimie des Interfaces et Modelisation pour l' Energie (LECIME), UMR 7575 CNRS, Chimie ParisTech, Paris (France); Department of Microelectronics and Semiconductor Devices, Technical University of Moldova, Chisinau (Moldova); Viana, B. [Laboratoire de Chimie de la Matiere Condensee de Paris, UMR 7574-CNRS-Chimie ParisTech-UPMC, Paris (France)

    2012-02-15

    Violet light-emitting diode (LED) structures based on Cd-alloyed zinc oxide (Zn{sub 1-x}Cd{sub x}O) nanorods (NRs)/p-GaN heterojunction have been fabricated by epitaxial electrodeposition at low temperatures in an aqueous soft bath followed by a mild thermal annealing. The ultraviolet (UV) room-temperature emission peak at around 397 nm with a full width at half-maximum (FWHM) of 10 nm observed from pure ZnO-NRs/p-GaN at room temperature was shifted to 417 nm with FWHM of 14 nm by employing a Zn{sub 0.92}Cd{sub 0.08}O-NRs/p-GaN heterojunction. The emission threshold voltage was low at about 5.0 V and the electroluminescence (EL) intensity rapidly increased with the applied forward-bias voltage. The emission wavelength increased with the Cd content in the alloy. The EL physics mechanism in LED structures of the heterojunctions is discussed. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Investigation of temperature dependent threshold voltage variation of Gd2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure

    Directory of Open Access Journals (Sweden)

    Atanu Das

    2012-09-01

    Full Text Available Temperature dependent threshold voltage (Vth variation of GaN/AlGaN/Gd2O3/Ni-Au structure is investigated by capacitance-voltage measurement with temperature varying from 25°C to 150°C. The Vth of the Schottky device without oxide layer is slightly changed with respect to temperature. However, variation of Vth is observed for both as-deposited and annealed device owing to electron capture by the interface traps or bulk traps. The Vth shifts of 0.4V and 3.2V are obtained for as-deposited and annealed device respectively. For annealed device, electron capture process is not only restricted in the interface region but also extended into the crystalline Gd2O3 layer through Frenkel-Poole emission and hooping conduction, resulting in a larger Vth shift. The calculated trap density for as-deposited and annealed device is 3.28×1011∼1.12×1011 eV−1cm−2 and 1.74×1012∼7.33×1011 eV−1cm−2 respectively in measured temperature range. These results indicate that elevated temperature measurement is necessary to characterize GaN/AlGaN heterostructure based devices with oxide as gate dielectric.

  5. Improvement in Brightness Uniformity by Compensating for the Threshold Voltages of Both the Driving Thin-Film Transistor and the Organic Light-Emitting Diode for Active-Matrix Organic Light-Emitting Diode Displays

    Science.gov (United States)

    Fan, Ching-Lin; Lai, Hui-Lung; Chang, Jyu-Yu

    2010-05-01

    In this paper, we propose a novel pixel design and driving method for active-matrix organic light-emitting diode (AM-OLED) displays using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs). The proposed threshold voltage compensation circuit, which comprised five transistors and two capacitors, has been verified to supply uniform output current by simulation work using the automatic integrated circuit modeling simulation program with integrated circuit emphasis (AIM-SPICE) simulator. The driving scheme of this voltage programming method includes four periods: precharging, compensation, data input, and emission. The simulated results demonstrate excellent properties such as low error rate of OLED anode voltage variation (<1%) and high output current. The proposed pixel circuit shows high immunity to the threshold voltage deviation characteristics of both the driving poly-Si TFT and the OLED.

  6. Pixel structures to compensate nonuniform threshold voltage and mobility of polycrystalline silicon thin-film transistors using subthreshold current for large-size active matrix organic light-emitting diode displays

    Science.gov (United States)

    Na, Jun-Seok; Kwon, Oh-Kyong

    2014-01-01

    We propose pixel structures for large-size and high-resolution active matrix organic light-emitting diode (AMOLED) displays using a polycrystalline silicon (poly-Si) thin-film transistor (TFT) backplane. The proposed pixel structures compensate the variations of the threshold voltage and mobility of the driving TFT using the subthreshold current. The simulated results show that the emission current error of the proposed pixel structure B ranges from -2.25 to 2.02 least significant bit (LSB) when the variations of the threshold voltage and mobility of the driving TFT are ±0.5 V and ±10%, respectively.

  7. CLA supplementation and aerobic exercise lower blood triacylglycerol, but have no effect on peak oxygen uptake or cardiorespiratory fatigue thresholds.

    Science.gov (United States)

    Jenkins, Nathaniel D M; Buckner, Samuel L; Cochrane, Kristen C; Bergstrom, Haley C; Goldsmith, Jacob A; Weir, Joseph P; Housh, Terry J; Cramer, Joel T

    2014-09-01

    This study examined the effects of 6 weeks of conjugated linoleic acid (CLA) supplementation and moderate aerobic exercise on peak oxygen uptake (VO2 peak), the gas exchange threshold (GET), the respiratory compensation point (RCP), and serum concentrations of cholesterol, triacylglycerol, and glucose in humans. Thirty-four untrained to moderately trained men (mean ± SD; age = 21.5 ± 2.8 years; mass = 77.2 ± 9.5 kg) completed this double-blind, placebo controlled study and were randomly assigned to either a CLA (Clarinol A-80; n = 18) or placebo (PLA; sunflower oil; n = 16) group. Prior to and following 6 weeks of aerobic training (50% VO2 peak for 30 min, twice per week) and supplementation (5.63 g of total CLA isomers [of which 2.67 g was c9, t11 and 2.67 g was t10, c12] or 7.35 g high oleic sunflower oil per day), each participant completed an incremental cycle ergometer test to exhaustion to determine their [Formula: see text] peak, GET, and RCP and fasted blood draws were performed to measure serum concentrations of cholesterol, triacylglycerol, and glucose. Serum triacylglycerol concentrations were lower (p CLA than the PLA group. For VO2 peak and glucose, there were group × time interactions (p 0.05) between the CLA and PLA groups. GET and RCP increased (p CLA and PLA groups. Overall, these data suggested that CLA and aerobic exercise may have synergistic, blood triacylglycerol lowering effects, although CLA may be ineffective for enhancing aerobic exercise performance in conjunction with a 6-week aerobic exercise training program in college-age men.

  8. Patch test dose-response study: polysensitized individuals do not express lower elicitation thresholds than single/double-sensitized individuals

    DEFF Research Database (Denmark)

    Carlsen, B C; Fischer, Louise Arup; Sosted, H

    2009-01-01

    BACKGROUND: It is not known if reduced elicitation thresholds are evident among polysensitized individuals when using allergens to which the patients are already sensitized. Reduced elicitation thresholds may be an expression of increased reactivity in this patient group. OBJECTIVES: To examine a...

  9. Using in-process measurements of open-gate structures to evaluate threshold voltage of normally-off GaN-based high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Bin; Ma, Xiao-Hua, E-mail: xhma@xidian.edu.cn, E-mail: yhao@xidian.edu.cn; Chen, Wei-Wei; Zhu, Jie-Jie; Xie, Yong [School of Advanced Materials and Nanotechnology, Xidian University, Xi' an 710071 (China); Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); Zhao, Sheng-Lei; Chen, Yong-He; Zhang, Jin-Cheng; Hao, Yue, E-mail: xhma@xidian.edu.cn, E-mail: yhao@xidian.edu.cn [Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2015-10-19

    The parameters of open-gate structures treated with different etching time were monitored during the gate recess process, and their impacts on the threshold voltage (V{sub th}) of final fabricated AlGaN/GaN high electron mobility transistors (HEMTs) based on open-gate structures were discussed in this paper. It is found that V{sub th} can exceed 0 V when channel resistance in the recessed region (R{sub on-open}) increases over ∼275 Ω mm, maximum current (I{sub Dmax}) decreases below ∼29 mA/mm, or recessed barrier thickness (t{sub RB}) is below ∼7.5 nm. In addition, t{sub RB} obtained by atomic force microscopy measurements and C-V measurements are also compared. Finally, theoretical common criteria based on the experimental results of this work for t{sub RB} and R{sub on-open} were established to evaluate the V{sub th} of a regular normally-off AlGaN/GaN HEMTs. The results indicate that these parameters of open-gate structure can be utilized to achieve normally-off HEMTs with controllable V{sub th}.

  10. Highly nonlinear property and threshold voltage of Sc2O3 doped ZnO-Bi2O3-based varistor ceramics

    Institute of Scientific and Technical Information of China (English)

    XU Dong; WU Jieting; JIAO Lei; XU Hongxing; ZHANG Peimei; YU Renhong; CHENG Xiaonong

    2013-01-01

    A series of ZnO-Bi2O3-based varistor ceramics doped with 0-0.4 mol.% Sc2O3 were prepared by high-energy ball milling and sintered at temperatures between 1000 and 1150 ℃.X-ray diffractometry (XRD) and scanning electron microscopy (SEM) were applied to characterize the phases and microstructure of the varistor ceramics.A DC parameter instrument for varistor ceramics was applied to investigate the electronic properties and Ⅴ-Ⅰ characteristics.The results showed that there were no changes in crystal structure with Sc2O3-doped varistor ceramics and that the average size of ZnO grain increased first and then decreased.The best electronic charactefistcs of the varistor ceramics prepared by high-energy ball milling were found in 0.3 mol.% Sc2O3-doped ZnO-Bi2O3-based ceramics sintered at 1000 ℃,which exhibited a threshold voltage of 821 V/mm,nonlinear coefficient of 62.1 and leakage current of 0.16 μA.

  11. Trend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal–oxide–semiconductor/magnetic tunnel junction hybrid latches

    Energy Technology Data Exchange (ETDEWEB)

    Ohsawa, T. [Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8579 (Japan); Ikeda, S.; Hanyu, T.; Ohno, H. [Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8579 (Japan); Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-8579 (Japan); Endoh, T., E-mail: tetsuo.endoh@cies.tohoku.ac.jp [Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8579 (Japan); Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-8579 (Japan); Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan)

    2014-05-07

    The robustness of data load of metal–oxide–semiconductor/magnetic tunnel junction (MOS/MTJ) hybrid latches at power-on is examined by using Monte Carlo simulation with the variations in magnetoresistances for MTJs and in threshold voltages for MOSFETs involved in 90 nm technology node. Three differential pair type spin-transfer-torque-magnetic random access memory cells (4T2MTJ, 6T2MTJ, and 8T2MTJ) are compared for their successful data load at power-on. It is found that the 4T2MTJ cell has the largest pass area in the shmoo plot in TMR ratio (tunnel magnetoresistance ratio) and V{sub dd} in which a whole 256 kb cell array can be powered-on successfully. The minimum TMR ratio for the 4T2MTJ in 0.9 V < V{sub dd} < 1.9 V is 140%, while the 6T2MTJ and the 8T2MTJ cells require TMR ratio larger than 170%.

  12. A two-stage cognitive theory of the positive symptoms of psychosis. Highlighting the role of lowered decision thresholds.

    Science.gov (United States)

    Moritz, Steffen; Pfuhl, Gerit; Lüdtke, Thies; Menon, Mahesh; Balzan, Ryan P; Andreou, Christina

    2017-09-01

    We outline a two-stage heuristic account for the pathogenesis of the positive symptoms of psychosis. A narrative review on the empirical evidence of the liberal acceptance (LA) account of positive symptoms is presented. At the heart of our theory is the idea that psychosis is characterized by a lowered decision threshold, which results in the premature acceptance of hypotheses that a nonpsychotic individual would reject. Once the hypothesis is judged as valid, counterevidence is not sought anymore due to a bias against disconfirmatory evidence as well as confirmation biases, consolidating the false hypothesis. As a result of LA, confidence in errors is enhanced relative to controls. Subjective probabilities are initially low for hypotheses in individuals with delusions, and delusional ideas at stage 1 (belief formation) are often fragile. In the course of the second stage (belief maintenance), fleeting delusional ideas evolve into fixed false beliefs, particularly if the delusional idea is congruent with the emotional state and provides "meaning". LA may also contribute to hallucinations through a misattribution of (partially) normal sensory phenomena. Interventions such as metacognitive training that aim to "plant the seeds of doubt" decrease positive symptoms by encouraging individuals to seek more information and to attenuate confidence. The effect of antipsychotic medication is explained by its doubt-inducing properties. The model needs to be confirmed by longitudinal designs that allow an examination of causal relationships. Evidence is currently weak for hallucinations. The theory may account for positive symptoms in a subgroup of patients. Future directions are outlined. Copyright © 2016 The Authors. Published by Elsevier Ltd.. All rights reserved.

  13. Diagnostic thresholds for ambulatory blood pressure moving lower: a review based on a meta-analysis-clinical implications

    DEFF Research Database (Denmark)

    Hansen, T.W.; Kikuya, M.; Thijs, L.

    2008-01-01

    Upper limits of normal ambulatory blood pressure (ABP) have been a matter of debate in recent years. Current diagnostic thresholds for ABP rely mainly on statistical parameters derived from reference populations. Recent findings from the International Database of Ambulatory Blood Pressure in Rela...... database is therefore being updated with additional population cohorts to enable the construction of multifactorial risk score charts, which also include ABP Udgivelsesdato: 2008/5......Upper limits of normal ambulatory blood pressure (ABP) have been a matter of debate in recent years. Current diagnostic thresholds for ABP rely mainly on statistical parameters derived from reference populations. Recent findings from the International Database of Ambulatory Blood Pressure...... in Relation to Cardiovascular Outcome (IDACO) provide outcome-driven thresholds for ABP. Rounded systolic/diastolic thresholds for optimal ABP were found to be 115/75 mm Hg for 24 hours, 120/80 mm Hg for daytime, and 100/65 mm Hg for nighttime. The corresponding rounded thresholds for normal ABP were 125...

  14. The physical mechanism on the threshold voltage temperature stability improvement for GaN HEMTs with pre-fluorination argon treatment

    Science.gov (United States)

    Wang, Yun-Hsiang; Liang, Yung C.; Samudra, Ganesh S.; Huang, Chih-Fang; Kuo, Wei-Hung; Lo, Guo-Qiang

    2016-06-01

    In this paper, a normally-off AlGaN/GaN MIS-HEMT with improved threshold voltage (VTH) thermal stability is reported with investigations on its physical mechanism. The normally-off operation of the device is achieved from novel short argon plasma treatment (APT) prior to the fluorine plasma treatment (FPT) on Al2O3 gate dielectrics. For the MIS-HEMT with FPT only, its VTH drops from 4.2 V at room temperature to 0.5 V at 200 °C. Alternatively, for the device with APT-then-FPT process, its VTH can retain at 2.5 V at 200 °C due to the increased amount of deep-level traps that do not emit electrons at 200 °C. This thermally stable VTH makes this device suitable for high power applications. The depth profile of the F atoms in Al2O3, measured by the secondary ion mass spectroscopy, reveals a significant increase in the F concentration when APT is conducted prior to FPT. The X-ray photoelectron spectroscopy (XPS) analysis on the plasma-treated Al2O3 surfaces observes higher composition of Al-F bonds if APT was applied before FPT. The enhanced breaking of Al-O bonds due to Ar bombardment assisted in the increased incorporation of F radicals at the surface during the subsequent FPT process. The Schrödinger equation of Al2OxFy cells, with the same Al-F compositions as obtained from XPS, was solved by Gaussian 09 molecular simulations to extract electron state distribution as a function of energy. The simulation results show creation of the deeper trap states in the Al2O3 bandgap when APT is used before FPT. Finally, the trap distribution extracted from the simulations is verified by the gate-stress experimental characterization to confirm the physical mechanism described.

  15. Patch test dose-response study: polysensitized individuals do not express lower elicitation thresholds than single/double-sensitized individuals.

    Science.gov (United States)

    Carlsen, B C; Fischer, L A; Sosted, H; Vølund, A; Menné, T; Johansen, J D

    2009-01-01

    It is not known if reduced elicitation thresholds are evident among polysensitized individuals when using allergens to which the patients are already sensitized. Reduced elicitation thresholds may be an expression of increased reactivity in this patient group. To examine and compare elicitation dose-response curves and elicitation thresholds in a polysensitized vs. a single/double-sensitized group for allergens to which the test subjects were already sensitized. Fifty-one patients (13 polysensitized and 38 single/double-sensitized) were patch tested with nickel sulphate, methyldibromo glutaronitrile (MDBGN) and p-phenylenediamine (PPD) in dilution series. The ratio between the doses eliciting a response in 50% of patients in the two groups was used as the measure for relative sensitivity. The dose-response curves of the polysensitized group for MDBGN and PPD were shifted to the right, and for nickel sulphate shifted to the left, compared with the single/double-sensitized group. The relative sensitivity for each of the three allergens and a combined relative sensitivity for all three allergens were not significantly different when comparing the polysensitized and single/double-sensitized groups. No increased sensitivity, in the form of distinct elicitation thresholds, could be demonstrated in polysensitized individuals compared with individuals with one or two contact allergies.

  16. Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor∗%单Halo全耗尽应变Si绝缘硅金属氧化物半导体场效应管的阈值电压解析模型*

    Institute of Scientific and Technical Information of China (English)

    辛艳辉†; 刘红侠; 范小娇; 卓青青

    2013-01-01

      为了改善金属氧化物半导体场效应管(MOSFET)的短沟道效应(SCE)、漏致势垒降低(DIBL)效应,提高电流的驱动能力,提出了单Halo全耗尽应变硅绝缘体(SOI) MOSFET结构,该结构结合了应变Si,峰值掺杂Halo结构, SOI三者的优点。通过求解二维泊松方程,建立了全耗尽器件表面势和阈值电压的解析模型。模型中分析了弛豫层中的Ge组分对表面势、表面场强和阈值电压的影响,不同漏电压对表面势的影响, Halo掺杂对阈值电压和DIBL的影响。结果表明,该新结构能够抑制SCE和DIBL效应,提高载流子的输运效率。%A single Halo fully depleted strain Si Silicon-On-insulator (SOI) structure, which has the advantages of strained Si, Halo doping, and SOI structure, is proposed to improve driving current, suppress the short channel effect (SCE) and drain induced barrier lowering (DIBL) effect. A two-dimensional analytical model for the surface potential, the surface electric field and the threshold voltage is proposed by solving Poisson’s equation. The effects of Ge fraction in the relaxed layer on surface potential and threshold voltage are investigated. In the paper we analyze the influence of drain voltage on surface potential. Finally the effects of Halo doping on threshold voltage and DIBL are investigated. The results show that the novel device can suppress the short channel effect and DIBL effect, and increase carrier transport speed.

  17. Transient Voltage Recorder

    Science.gov (United States)

    Medelius, Pedro J. (Inventor); Simpson, Howard J. (Inventor)

    2002-01-01

    A voltage transient recorder can detect lightning induced transient voltages. The recorder detects a lightning induced transient voltage and adjusts input amplifiers to accurately record transient voltage magnitudes. The recorder stores voltage data from numerous monitored channels, or devices. The data is time stamped and can be output in real time, or stored for later retrieval. The transient recorder, in one embodiment, includes an analog-to-digital converter and a voltage threshold detector. When an input voltage exceeds a pre-determined voltage threshold, the recorder stores the incoming voltage magnitude and time of arrival. The recorder also determines if its input amplifier circuits clip the incoming signal or if the incoming signal is too low. If the input data is clipped or too low, the recorder adjusts the gain of the amplifier circuits to accurately acquire subsequent components of the lightning induced transients.

  18. Lowered threshold energy for femtosecond laser induced optical breakdown in a water based eye model by aberration correction with adaptive optics.

    Science.gov (United States)

    Hansen, Anja; Géneaux, Romain; Günther, Axel; Krüger, Alexander; Ripken, Tammo

    2013-06-01

    In femtosecond laser ophthalmic surgery tissue dissection is achieved by photodisruption based on laser induced optical breakdown. In order to minimize collateral damage to the eye laser surgery systems should be optimized towards the lowest possible energy threshold for photodisruption. However, optical aberrations of the eye and the laser system distort the irradiance distribution from an ideal profile which causes a rise in breakdown threshold energy even if great care is taken to minimize the aberrations of the system during design and alignment. In this study we used a water chamber with an achromatic focusing lens and a scattering sample as eye model and determined breakdown threshold in single pulse plasma transmission loss measurements. Due to aberrations, the precise lower limit for breakdown threshold irradiance in water is still unknown. Here we show that the threshold energy can be substantially reduced when using adaptive optics to improve the irradiance distribution by spatial beam shaping. We found that for initial aberrations with a root-mean-square wave front error of only one third of the wavelength the threshold energy can still be reduced by a factor of three if the aberrations are corrected to the diffraction limit by adaptive optics. The transmitted pulse energy is reduced by 17% at twice the threshold. Furthermore, the gas bubble motions after breakdown for pulse trains at 5 kilohertz repetition rate show a more transverse direction in the corrected case compared to the more spherical distribution without correction. Our results demonstrate how both applied and transmitted pulse energy could be reduced during ophthalmic surgery when correcting for aberrations. As a consequence, the risk of retinal damage by transmitted energy and the extent of collateral damage to the focal volume could be minimized accordingly when using adaptive optics in fs-laser surgery.

  19. The Realization of Low Loop Voltage Start-up of HT-7 Tokamak Discharge with the Assistance of Lower Hybrid Wave

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Low voltage start-up was realized in HT-7 discharges under the assistance of lower hybrid (LH) waves. The use of a strong LH wave, which can change its N// spectrum in a large range of several milliseconds, made the loop voltage for start-up reduce from around 20 V to less than 5 V. It means that the electric field for HT-7 start-up decreases from 2.5~3 V/m to 0.6 V/m.Some physical phenomena such as the consumption of magnetic flux in start-up phase and the radiation from the initial plasma were observed in this kind of low voltage start-up discharges.

  20. Device for monitoring cell voltage

    Science.gov (United States)

    Doepke, Matthias [Garbsen, DE; Eisermann, Henning [Edermissen, DE

    2012-08-21

    A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

  1. Cortex glial cells activation, associated with lowered mechanical thresholds and motor dysfunction, persists into adulthood after neonatal pain.

    Science.gov (United States)

    Sanada, Luciana Sayuri; Sato, Karina Laurenti; Machado, Nathalia Leilane Berto; Carmo, Elisabete de Cássia do; Sluka, Kathleen A; Fazan, Valeria Paula Sassoli

    2014-06-01

    We investigated if changes in glial activity in cortical areas that process nociceptive stimuli persisted in adult rats after neonatal injury. Neonatal pain was induced by repetitive needle prickling on the right paw, twice per day for 15 days starting at birth. Wistar rats received either neonatal pain or tactile stimulation and were tested behaviorally for mechanical withdrawal thresholds of the paws and gait alterations, after 15 (P15) or 180 (P180) days of life. Brains from rats on P15 and P180 were immunostained for glial markers (GFAP, MCP-1, OX-42) and the following cortical areas were analyzed for immunoreactivity density: prefrontal, anterior insular, anterior cingulated, somatosensory and motor cortices. Withdrawal thresholds of the stimulated paw remained decreased on P180 after neonatal pain when compared to controls. Neonatal pain animals showed increased density for both GFAP and MCP-1 staining, but not for OX-42, in all investigated cortical areas on both experimental times (P15 and P180). Painful stimuli in the neonatal period produced pain behaviors immediately after injury that persisted in adult life, and was accompanied by increase in the glial markers density in cortical areas that process and interpret pain. Thus, long-lasting changes in cortical glial activity could be, at least in part, responsible for the persistent hyperalgesia in adult rats that suffered from neonatal pain.

  2. Luminescence imaging of water during irradiation of X-ray photons lower energy than Cerenkov- light threshold

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, Seiichi; Koyama, Shuji; Komori, Masataka [Radiological and Medical Laboratory Sciences, Nagoya University Graduate School of Medicine (Japan); Toshito, Toshiyuki [Department of Proton Therapy Physics, Nagoya Proton Therapy Center, Nagoya City West Medical Center (Japan)

    2016-10-01

    Luminescence imaging of water using X-ray photon irradiation at energy lower than maximum energy of ~200 keV is thought to be impossible because the secondary electrons produced in this energy range do not emit Cerenkov- light. Contrary to this consensus assumption, we show that the luminescence imaging of water can be achieved by X-ray irradiation at energy lower than 120 keV. We placed water phantoms on a table with a conventional X-ray imaging system, and luminescence images of these phantoms were measured with a high-sensitivity, cooled charge coupled device (CCD) camera during X-ray photon irradiation at energy below 120 keV. We also carried out such imaging of an acrylic block and plastic scintillator. The luminescence images of water phantoms taken during X-ray photon irradiation clearly showed X-ray photon distribution. The intensity of the X-ray photon images of the phantom increased almost proportionally to the number of X-ray irradiations. Lower-energy X-ray photon irradiation showed lower-intensity luminescence at the deeper parts of the phantom due to the higher X-ray absorption in the water phantom. Furthermore, lower-intensity luminescence also appeared at the deeper parts of the acrylic phantom due to its higher density than water. The intensity of the luminescence for water was 0.005% of that for plastic scintillator. Luminescence imaging of water during X-ray photon irradiation at energy lower than 120 keV was possible. This luminescence imaging method is promising for dose estimation in X-ray imaging systems.

  3. Analysis of GIS data to investigate natural resource impacts of high-voltage overhead lines in the examples in Lower Saxony and North Rhine-Westphalia

    Energy Technology Data Exchange (ETDEWEB)

    Thinh, Nguyen Xuan; Sander, Leon; Kopec, Jakob; Muehlnickel, Kai [Technische Univ. Dortmund (Germany). Dept. of Spatial Information Management and Modelling

    2013-07-01

    In this paper we describe shortly Lower Saxony and North Rhine-Westphalia as study areas and the legal framework, both in the context of natural resource impacts of high-voltage overhead lines. We then conduct the buffer analysis of a GIS dataset in order to investigate natural resource impacts of existing high-voltage overhead lines in the two mentioned study areas. The paper is based upon the first results of the interdisciplinary research and development project ''Power Network Planning'' funded as part of the 6th Energy research program ''Research for an environmentally friendly, reliable and affordable energy supply'' by the German Federal Ministry of Economics and Technology (BMWi). (orig.)

  4. Improvement in Brightness Uniformity by Compensating for the Threshold Voltages of Both the Driving Thin-Film Transistor and the Organic Light-Emitting Diode for Active-Matrix Organic Light-Emitting Diode Displays

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2014-01-01

    Full Text Available This paper proposes a novel pixel circuit design and driving method for active-matrix organic light-emitting diode (AM-OLED displays that use low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs as driving element. The automatic integrated circuit modeling simulation program with integrated circuit emphasis (AIM-SPICE simulator was used to verify that the proposed pixel circuit, which comprises five transistors and one capacitor, can supply uniform output current. The voltage programming method of the proposed pixel circuit comprises three periods: reset, compensation with data input, and emission periods. The simulated results reflected excellent performance. For instance, when ΔVTH=±0.33 V, the average error rate of the OLED current variation was low (<0.8%, and when ΔVTH_OLED=+0.33 V, the error rate of the OLED current variation was 4.7%. Moreover, when the I×R (current × resistance drop voltage of a power line was 0.3 V, the error rate of the OLED current variation was 5.8%. The simulated results indicated that the proposed pixel circuit exhibits high immunity to the threshold voltage deviation of both the driving poly-Si TFTs and OLEDs, and simultaneously compensates for the I×R drop voltage of a power line.

  5. Low-Voltage Process-Compensated VCO with On-Chip Process Monitoring and Body-Biasing Circuit Techniques

    OpenAIRE

    Ueno, Ken; Hirose, Tetsuya; Asai, Tetsuya; Amemiya, Yoshihito

    2009-01-01

    A voltage-controlled oscillator (VCO) tolerant to process variations at lower supply voltage was proposed. The circuit consists of an on-chip threshold-voltage-monitoring circuit, a current-source circuit, a body-biasing control circuit, and the delay cells of the VCO. Because variations in low-voltage VCO frequency are mainly determined by that of the current in delay cells. a current-compensation technique was adopted by using an on-chip threshold-voltage-monitoring circuit and body-biasing...

  6. Lowering the background level and the energy threshold of Micromegas x-ray detectors for axion searches

    CERN Document Server

    Iguaz, F J; Aznar, F; Castel, J F; Dafni, T; Davenport, M; Ferrer-Ribas, E; Galan, J; Garcia, J A; Garza, J G; Giomataris, I; Irastorza, I G; Papaevangelou, T; Rodriguez, A; Tomas, A; Vafeiadis, T; Yildiz, S C

    2014-01-01

    Axion helioscopes search for solar axions by their conversion in x-rays in the presence of high magnetic fields. The use of low background x-ray detectors is an essential component contributing to the sensitivity of these searches. In this work, we review the recent advances on Micromegas detectors used in the CERN Axion Solar Telescope (CAST) and proposed for the future International Axion Observatory (IAXO). The actual setup in CAST has achieved background levels below 10$^{-6}$ keV$^{-1}$ cm$^{-2}$ s$^{-1}$, a factor 100 lower than the first generation of Micromegas detectors. This reduction is based on active and passive shielding techniques, the selection of radiopure materials, offline discrimination techniques and the high granularity of the readout. We describe in detail the background model of the detector, based on its operation at CAST site and at the Canfranc Underground Laboratory (LSC), as well as on Geant4 simulations. The best levels currently achieved at LSC are low than 10$^{-7}$ keV$^{-1}$ ...

  7. Ki-67 proliferation index but not mitotic thresholds integrates the molecular prognostic stratification of lower grade gliomas

    Science.gov (United States)

    Duregon, Eleonora; Bertero, Luca; Pittaro, Alessandra; Soffietti, Riccardo; Rudà, Roberta; Trevisan, Morena; Papotti, Mauro; Ventura, Laura; Senetta, Rebecca; Cassoni, Paola

    2016-01-01

    Despite several molecular signatures for “lower grade diffuse gliomas” (LGG) have been identified, WHO grade still remains a cornerstone of treatment guidelines. Mitotic count bears a crucial role in its definition, although limited by the poor reproducibility of standard Hematoxylin & Eosin (H&E) evaluation. Phospho-histone-H3 (PHH3) and Ki-67 have been proposed as alternative assays of cellular proliferation. Therefore in the present series of 141 LGG, the molecular characterization (namely IDH status, 1p/19q co-deletion and MGMT promoter methylation) was integrated with the tumor “proliferative trait” (conventional H&E or PHH3-guided mitotic count and Ki-67 index) in term of prognosis definition. Exclusively high PHH3 and Ki-67 values were predictor of poor prognosis (log rank test, P = 0.0281 for PHH3 and P = 0.032 for Ki-67), unlike standard mitotic count. Based on Cox proportional hazard regression analyses, among all clinical (age), pathological (PHH3 and Ki-67) and molecular variables (IDH, 1p/19q codeletion and MGMT methylation) with a prognostic relevance at univariate survival analysis, only IDH expression (P = 0.001) and Ki-67 proliferation index (P = 0.027) proved to be independent prognostic factors. In addition, stratifying by IDH expression status, high Ki-67 retained its prognostic relevance uniquely in the IDH negative patient (P = 0.029) doubling their risk of death (hazard ratio = 2.27). Overall, PHH3 immunostaining is the sole reliable method with a prognostic value to highlight mitotic figures in LGG. Ki-67 proliferation index exceeds PHH3 mitotic count as a predictor of patient's prognosis, and should be integrated with molecular markers in a comprehensive grading system for LGG. PMID:27049832

  8. Measurement of the magnetic fields of high-voltage substations (230 kV) in Tehran (Iran) and comparison with the ACGIH threshold limit values.

    Science.gov (United States)

    Fard, Mahdieh Sharifi; Nasiri, Parvin; Monazzam, Mohammad Reza

    2011-06-01

    Measurements were made according to IEEE standard 644-1994 at a height of 1 m above floor level. It is concluded that none of the measurements exceeded the ACGIH threshold limit value. Among all control rooms the highest measured density amount is 0.69 μT in the control room of Ozgol substation and the lowest is 0.2 μT in the post of Shahid Firouzi. The control room of Ozgol substation is located in the second floor and bus-bars are located at a short distance from the window on the east, and so the highest recorded magnetic field is measured in this control room. Among all switchgear parts the highest amount 9.15 μT is measured in Kan substation. None of the measurements exceeded the ACGIH threshold limit value.

  9. Quick-low-density parity check and dynamic threshold voltage optimization in 1X nm triple-level cell NAND flash memory with comprehensive analysis of endurance, retention-time, and temperature variation

    Science.gov (United States)

    Doi, Masafumi; Tokutomi, Tsukasa; Hachiya, Shogo; Kobayashi, Atsuro; Tanakamaru, Shuhei; Ning, Sheyang; Ogura Iwasaki, Tomoko; Takeuchi, Ken

    2016-08-01

    NAND flash memory’s reliability degrades with increasing endurance, retention-time and/or temperature. After a comprehensive evaluation of 1X nm triple-level cell (TLC) NAND flash, two highly reliable techniques are proposed. The first proposal, quick low-density parity check (Quick-LDPC), requires only one cell read in order to accurately estimate a bit-error rate (BER) that includes the effects of temperature, write and erase (W/E) cycles and retention-time. As a result, 83% read latency reduction is achieved compared to conventional AEP-LDPC. Also, W/E cycling is extended by 100% compared with conventional Bose-Chaudhuri-Hocquenghem (BCH) error-correcting code (ECC). The second proposal, dynamic threshold voltage optimization (DVO) has two parts, adaptive V Ref shift (AVS) and V TH space control (VSC). AVS reduces read error and latency by adaptively optimizing the reference voltage (V Ref) based on temperature, W/E cycles and retention-time. AVS stores the optimal V Ref’s in a table in order to enable one cell read. VSC further improves AVS by optimizing the voltage margins between V TH states. DVO reduces BER by 80%.

  10. Non-traditional method-based solution for elimination of lower order harmonics in voltage source inverter feeding an induction motor drive

    Directory of Open Access Journals (Sweden)

    Vargese Jegathesan

    2008-01-01

    Full Text Available This paper presents an efficient and reliable Genetic Algorithm-based solution for Specific Harmonic Elimination (SHE switching pattern. This method eliminates considerable amount of lower order line voltage harmonics in Pulse Width Modulation (PWM inverter. The determination of pulse pattern for the elimination of some lower order harmonics of a PWM inverter necessitates solving a system of nonlinear transcendental equations. Genetic Algorithm is used to solve nonlinear transcendental equations for PWM-SHE. In this proposed method, harmonics up to 17th are eliminated using Genetic Algorithm without using Dual transformer. Simulations using Matlab 7.0 and PSIM 6.1 are carried out so as to validate the solution.

  11. On the Lowering the Threshold of Middle and Small Shareholders Cumulative Voting%论降低中小股东累积投票的门槛

    Institute of Scientific and Technical Information of China (English)

    胡祖文

    2014-01-01

    累积投票制的宗旨是保护中小股东选出代言人,但我国公司运行实践中从该制度获益的不是中小股东而是二、三股东们。更具讽刺意味的是获益的二三股东们却不领情,领情的广大中小股东又难获益。原因是中小股东想要通过累积投票权选出代言人的门槛太高,以致承载中小股东希望的累积投票制变成了大股东迎合监管层的一种故作姿态。本文站在中小股东的视角,秉承累积投票制创立之精神,尊重我国《公司法》立法原意,深入分析中小股东累积投票将遇到的一个个门槛,针对不同的门槛分别给出了降低门槛的建议。%Cumulative voting system is to protect that minority shareholders can elect the spokesperson, but in the practice of China's companies the second or the third shareholders can benefit from the system not small and medium-sized shareholders. Ironically the second or the third shareholders who get the benefits are un-grateful but the vast number of small and medium shareholders who are grateful cannot get the benefit. The reason is the threshold which the medium and small shareholders want to elect the spokesperson through the cumulative voting is too high, so that the system of cumulative voting changes into the intentional attitude that the strong stock holders cater to the regulators. The author, in the perspective of the small and medium-sized shareholders, adhering to the spirit of the creation of the cumulative voting system, respecting the legislative intent of China's Company Law, analyzed those small and medium-sized shareholders cumulative voting would meet several thresholds, and gave advice on lowering thresholds according to the different thresholds.

  12. Should viral load thresholds be lowered?: Revisiting the WHO definition for virologic failure in patients on antiretroviral therapy in resource-limited settings.

    Science.gov (United States)

    Labhardt, Niklaus D; Bader, Joëlle; Lejone, Thabo Ishmael; Ringera, Isaac; Hobbins, Michael A; Fritz, Christiane; Ehmer, Jochen; Cerutti, Bernard; Puga, Daniel; Klimkait, Thomas

    2016-07-01

    The World Health Organization (WHO) guidelines on antiretroviral therapy (ART) define treatment failure as 2 consecutive viral loads (VLs) ≥1000 copies/mL. There is, however, little evidence supporting 1000 copies as an optimal threshold to define treatment failure. Objective of this study was to assess the correlation of the WHO definition with the presence of drug-resistance mutations in patients who present with 2 consecutive unsuppressed VL in a resource-limited setting.In 10 nurse-led clinics in rural Lesotho children and adults on first-line ART for ≥6 months received a first routine VL. Those with plasma VL ≥80 copies/mL were enrolled in a prospective study, receiving enhanced adherence counseling (EAC) and a follow-up VL after 3 months. After a second unsuppressed VL genotypic resistance testing was performed. Viruses with major mutations against ≥2 drugs of the current regimen were classified as "resistant".A total of 1563 adults and 191 children received a first routine VL. Of the 138 adults and 53 children with unsuppressed VL (≥80 copies/mL), 165 (116 adults; 49 children) had a follow-up VL after EAC; 108 (74 adults; 34 children) remained unsuppressed and resistance testing was successful. Ninety of them fulfilled the WHO definition of treatment failure (both VL ≥1000 copies/mL); for another 18 both VL were unsuppressed but with definition was 81.1% (73/90) for the presence of resistant virus. Among the 18 with VL levels between 80 and 1000 copies/mL, thereby classified as "non-failures", 17 (94.4%) harbored resistant viruses. Lowering the VL threshold from 1000 copies/mL to 80 copies/mL at both determinations had no negative influence on the PPV (83.3%; 90/108).The current WHO-definition misclassifies patients who harbor resistant virus at VL below 1000 c/mL as "nonfailing." Lowering the threshold to VL ≥80 copies/mL identifies a significantly higher number of patients with treatment-resistant virus and should be

  13. Low-Voltage Continuous Electrospinning Patterning.

    Science.gov (United States)

    Li, Xia; Li, Zhaoying; Wang, Liyun; Ma, Guokun; Meng, Fanlong; Pritchard, Robyn H; Gill, Elisabeth L; Liu, Ye; Huang, Yan Yan Shery

    2016-11-30

    Electrospinning is a versatile technique for the construction of microfibrous and nanofibrous structures with considerable potential in applications ranging from textile manufacturing to tissue engineering scaffolds. In the simplest form, electrospinning uses a high voltage of tens of thousands volts to draw out ultrafine polymer fibers over a large distance. However, the high voltage limits the flexible combination of material selection, deposition substrate, and control of patterns. Prior studies show that by performing electrospinning with a well-defined "near-field" condition, the operation voltage can be decreased to the kilovolt range, and further enable more precise patterning of fibril structures on a planar surface. In this work, by using solution dependent "initiators", we demonstrate a further lowering of voltage with an ultralow voltage continuous electrospinning patterning (LEP) technique, which reduces the applied voltage threshold to as low as 50 V, simultaneously permitting direct fiber patterning. The versatility of LEP is shown using a wide range of combination of polymer and solvent systems for thermoplastics and biopolymers. Novel functionalities are also incorporated when a low voltage mode is used in place of a high voltage mode, such as direct printing of living bacteria; the construction of suspended single fibers and membrane networks. The LEP technique reported here should open up new avenues in the patterning of bioelements and free-form nano- to microscale fibrous structures.

  14. Influenza virus strains with a fusion threshold of pH 5.5 or lower are inhibited by amantadine. Brief report

    NARCIS (Netherlands)

    W.E.Ph. Beyer (Walter); R.W.H. Ruigrok; H. van Driel; N. Masurel (Nic)

    1986-01-01

    textabstractNineteen influenza virus strains were examined for susceptibility to amantadine-HCl (AMT) and for pH-thresholds of haemagglutinin-induced haemolysis. Whereas pH-thresholds below 5.5 were not seen in AMT-resistant strains, AMT-sensitive strains showed pH-thresholds either below or above 5

  15. Lowering the Operational Voltage of Single-Layer Polymer Electroluminescent Devices by Using CuOx Modifying Indium-Tin Oxide Electrode

    Institute of Scientific and Technical Information of China (English)

    ZHOU Xin-ran; ZHAO Xin-wen; HU Wen-ping

    2007-01-01

    In this study it is demonstrated that oxygen-plasma-generated CuOx can enhance the holes injection from ITO anode into polymer layer in single-layer polymer EL devices. The possible reason for this enhancement is because the ITO anode modified with CuOx possesses much higher work function than pure ITO anode, which reduces the barrier for hole-injection and further lowers the operational voltage of the polymer EL devices. The work function shift is probable due to the oxygen-plasma-generated CuOx can store more releasable oxygen, and the releasable oxygen in turn changes the oxygen concentration just near ITO surface, which will shift the work function of ITO anode.

  16. 一种基于动态阈值NMOS的1.2V CMOS模拟乘法器%A 1.2 V CMOS Analog Multiplier Based on Dynamic Threshold Voltage NMOS Transistor

    Institute of Scientific and Technical Information of China (English)

    程卫东; 朱樟明; 王雷

    2011-01-01

    分析了以动态阈值NMOS晶体管作为输入信号的输入晶体管,利用4个动态阈值NMOS和2个有源电阻设计和实现的一种1.2 V低功耗CMOS模拟乘法器电路。该电路具有节省输入晶体管数目、偏置晶体管和偏置电路,以及性能指标优良的特点。其主要参数指标达到:一、三次谐波差值40 dB,输出信号频带宽度375 MHz,平均电源电流约30μA,动态功耗约36μW。可直接应用于低功耗通信集成电路设计。%This paper analyses an analog multiplier based on dynamic threshold voltage NMOS transistor for two input transistor.Four dynamic threshold voltage NMOS transistor and two active resistors are used to design a novel 1.2 V low power CMOS analog multiplier.The number of input transistor has been decreased and the biased transistor and circuits have been saved,while the performance is appropriate.The main characteristics are that the margin between the first order harmonious wave and the third order harmonious wave of the output wave is about 40 dB,that the output frequency bandwidth is 375 MHz,and that the average power supply current is 30 μA.The novel analog multiplier can be applied for the design of low power communication integrated circuits.

  17. The Bcl-2-associated death promoter (BAD) lowers the threshold at which the Bcl-2-interacting domain death agonist (BID) triggers mitochondria disintegration.

    Science.gov (United States)

    Howells, Christopher C; Baumann, William T; Samuels, David C; Finkielstein, Carla V

    2011-02-21

    The Bcl-2-associated death promoter (BAD) protein, like many other BH3-only proteins, is known to promote apoptosis through the intrinsic mitochondrial pathway. Unlike the BH3-interacting domain death agonist (BID) protein, BAD cannot directly trigger apoptosis but, instead, lowers the threshold at which apoptosis is induced. In many mathematical models of apoptosis, BAD is neglected or abstracted. The work presented here considers the incorporation of BAD and its various modifications in a model of the tBID-induction of BAK (Bcl-2 homologous antagonist killer) or the tBID-induction of BAX (Bcl-2-associated X protein). Steady state equations are used to develop an explicit formula describing the total concentration level of tBID, guaranteed to trigger apoptosis, as a bilinear function of the total BAD concentration level and the total anti-apoptotic protein concentration level (usually Bcl-2 or Bcl-xL). In particular, the formula explains how the pro-apoptotic protein BAD lowers the threshold at which tBID induces BAK/BAX activation-reducing the level of total Bcl-2/Bcl-xL available to inhibit tBID signaling in the mitochondria. Attention is then turned to the experimental data surrounding BAD phosphorylation, a process known to inhibit the pro-apoptotic effects of BAD. To address this data, the phosphorylation process is modeled following two separate kinetics in which either free unbound BAD is the assumed substrate or Bcl-xL/Bcl-2-bound BAD is the assumed substrate. Bifurcation analysis and further analysis of the bilinear equation validate experiments, which suggest that BAD phosphorylation prevents irreversible BAK/BAX-mediated apoptosis, even when phosphorylation-induced dissociation of Bcl-xL/Bcl-2-bound BAD is blocked. It is also shown that a cooperative, even synergistic, removal of mitochondrial BAD is seen when both types of phosphorylation are assumed possible. The presented work, however, reveals that the balance between BAD phosphorylation and

  18. Mixed voltage VLSI design

    Science.gov (United States)

    Panwar, Ramesh; Rennels, David; Alkalaj, Leon

    1993-01-01

    A technique for minimizing the power dissipated in a Very Large Scale Integration (VLSI) chip by lowering the operating voltage without any significant penalty in the chip throughput even though low voltage operation results in slower circuits. Since the overall throughput of a VLSI chip depends on the speed of the critical path(s) in the chip, it may be possible to sustain the throughput rates attained at higher voltages by operating the circuits in the critical path(s) with a high voltage while operating the other circuits with a lower voltage to minimize the power dissipation. The interface between the gates which operate at different voltages is crucial for low power dissipation since the interface may possibly have high static current dissipation thus negating the gains of the low voltage operation. The design of a voltage level translator which does the interface between the low voltage and high voltage circuits without any significant static dissipation is presented. Then, the results of the mixed voltage design using a greedy algorithm on three chips for various operating voltages are presented.

  19. Investigations on Substrate Temperature-Induced Growth Modes of Organic Semiconductors at Dielectric/semiconductor Interface and Their Correlation with Threshold Voltage Stability in Organic Field-Effect Transistors.

    Science.gov (United States)

    Padma, Narayanan; Maheshwari, Priya; Bhattacharya, Debarati; Tokas, Raj B; Sen, Shashwati; Honda, Yoshihide; Basu, Saibal; Pujari, Pradeep Kumar; Rao, T V Chandrasekhar

    2016-02-10

    Influence of substrate temperature on growth modes of copper phthalocyanine (CuPc) thin films at the dielectric/semiconductor interface in organic field effect transistors (OFETs) is investigated. Atomic force microscopy (AFM) imaging at the interface reveals a change from 'layer+island' to "island" growth mode with increasing substrate temperatures, further confirmed by probing the buried interfaces using X-ray reflectivity (XRR) and positron annihilation spectroscopic (PAS) techniques. PAS depth profiling provides insight into the details of molecular ordering while positron lifetime measurements reveal the difference in packing modes of CuPc molecules at the interface. XRR measurements show systematic increase in interface width and electron density correlating well with the change from layer + island to coalesced huge 3D islands at higher substrate temperatures. Study demonstrates the usefulness of XRR and PAS techniques to study growth modes at buried interfaces and reveals the influence of growth modes of semiconductor at the interface on hole and electron trap concentrations individually, thereby affecting hysteresis and threshold voltage stability. Minimum hole trapping is correlated to near layer by layer formation close to the interface at 100 °C and maximum to the island formation with large voids between the grains at 225 °C.

  20. Hot-carrier-induced linear drain current and threshold voltage degradation for thin layer silicon-on-insulator field P-channel lateral double-diffused metal-oxide-semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Xin; Qiao, Ming; He, Yitao; Li, Zhaoji; Zhang, Bo, E-mail: bozhang@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)

    2015-11-16

    Hot-carrier-induced linear drain current (I{sub dlin}) and threshold voltage (V{sub th}) degradations for the thin layer SOI field p-channel lateral double-diffused MOS (pLDMOS) are investigated. Two competition degradation mechanisms are revealed and the hot-carrier conductance modulation model is proposed. In the channel, hot-hole injection induced positive oxide trapped charge and interface trap gives rise to the V{sub th} increasing and the channel conductance (G{sub ch}) decreasing, then reduces I{sub dlin}. In the p-drift region, hot-electron injection induced negative oxide trapped charge enhances the conductance of drift doping resistance (G{sub d}), and then increases I{sub dlin}. Consequently, the eventual I{sub dlin} degradation is controlled by the competition of the two mechanisms due to conductance modulation in the both regions. Based on the model, it is explained that the measured I{sub dlin} anomalously increases while the V{sub th} is increasing with power law. The thin layer field pLDMOS exhibits more severe V{sub th} instability compared with thick SOI layer structure; as a result, it should be seriously evaluated in actual application in switching circuit.

  1. Exact Threshold Circuits

    DEFF Research Database (Denmark)

    Hansen, Kristoffer Arnsfelt; Podolskii, Vladimir V.

    2010-01-01

    We initiate a systematic study of constant depth Boolean circuits built using exact threshold gates. We consider both unweighted and weighted exact threshold gates and introduce corresponding circuit classes. We next show that this gives a hierarchy of classes that seamlessly interleave with the ......We initiate a systematic study of constant depth Boolean circuits built using exact threshold gates. We consider both unweighted and weighted exact threshold gates and introduce corresponding circuit classes. We next show that this gives a hierarchy of classes that seamlessly interleave...... with the well-studied corresponding hierarchies defined using ordinary threshold gates. A major open problem in Boolean circuit complexity is to provide an explicit super-polynomial lower bound for depth two threshold circuits. We identify the class of depth two exact threshold circuits as a natural subclass...

  2. High Voltage Test Apparatus for a Neutron EDM Experiment and Lower Limit on the Dielectric Strength of Liquid Helium at Large Volumes

    CERN Document Server

    Long, J C; Boissevain, J G; Clark, D J; Cooper, M D; Gómez, J J; Lamoreaux, S K; Mischke, R E; Penttila, S I

    2006-01-01

    A new search for a permanent electric dipole moment (EDM) of the neutron is underway using ultracold neutrons produced and held in a bath of superfluid helium. Attaining the target sensitivity requires maintaining an electric field of several tens of kilovolts per centimeter across the experimental cell, which is nominally 7.5 cm wide and will contain about 4 liters of superfluid. The electrical properties of liquid helium are expected to be sufficient to meet the design goals, but little is known about these properties for volumes and electrode spacings appropriate to the EDM experiment. Furthermore, direct application of the necessary voltages from an external source to the experimental test cell is impractical. An apparatus to amplify voltages in the liquid helium environment and to test the electrical properties of the liquid for large volumes and electrode spacings has been constructed. The device consists of a large-area parallel plate capacitor immersed in a 200 liter liquid helium dewar. Preliminary r...

  3. Dental age estimation: periodontal ligament visibility (PLV)-pattern recognition of a conclusive mandibular maturity marker related to the lower left third molar at the 18-year threshold.

    Science.gov (United States)

    Lucas, Victoria S; McDonald, Fraser; Andiappan, Manoharan; Roberts, Graham

    2016-11-03

    The purpose of this study was to explore the applicability of periodontal ligament visibility (PLV) at the 18-year threshold. This mandibular maturity marker is graded into four separate age related stages, PLV-A, PLV-B, PLV-C, and PLV-D. These are discernible on a dental panoramic tomograph (DPT). The sample comprised a total of 2000 DPTs evenly divided into half yearly age bands from 16.00 to 25.99 years with 50 females and 50 males in each age band. It was found that PLV-A and PLV-B had minimum values below the 18-year threshold. PLV-C and PLV-D in females had minimum values of 18.08 and 18.58 years, respectively. In males, the minimum values for PLV-C was 18.10 years and PLV-D was 18.67 years. It was concluded that the presence of PLV-C or PLV-D indicates that a subject is over 18 years with a very high level of probability.

  4. A Capacitor Electricity Transformer as a Substitute for Lower Voltage Transformer%一种可替代降压变压器的容式电能变换器

    Institute of Scientific and Technical Information of China (English)

    刘白鸽; 周符明

    2000-01-01

    介绍了一种用电容器、二极管和开关组成的新型电能变换器(直流分压器)。直流分压器是一个单向传输的器件,在输入、输出交替进行的条件下,它能将输入的高电压实行分压,以直流低电压输出。直流分压器集开关电源和电能变换于一身,可以被用来设计降压型直流电源。%A new kind of electricity transformer which indudes capactiors, diodes and switches is introduced in this paper. It is an unilateralism-transforming device, which can dispart high import voltage when inputting and outputting by tums, and outputs low voltage of direct current. DC voltage divider can be used to design lower voltage direct current power.

  5. Polynomial threshold functions and Boolean threshold circuits

    DEFF Research Database (Denmark)

    Hansen, Kristoffer Arnsfelt; Podolskii, Vladimir V.

    2013-01-01

    We study the complexity of computing Boolean functions on general Boolean domains by polynomial threshold functions (PTFs). A typical example of a general Boolean domain is 12n . We are mainly interested in the length (the number of monomials) of PTFs, with their degree and weight being...... of secondary interest. We show that PTFs on general Boolean domains are tightly connected to depth two threshold circuits. Our main results in regard to this connection are: PTFs of polynomial length and polynomial degree compute exactly the functions computed by THRMAJ circuits. An exponential length lower...

  6. Lowered operation voltage in Pt/SBi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors by oxynitriding Si

    Science.gov (United States)

    Horiuchi, Takeshi; Takahashi, Mitsue; Li, Qiu-Hong; Wang, Shouyu; Sakai, Shigeki

    2010-05-01

    Oxynitrided Si (SiON) surfaces show smaller subthreshold swings than do directly nitrided Si (SiN) surfaces when used in ferroelectric-gate field-effect transistors (FeFETs) having the following stacked-gate structure: Pt/SrBi2Ta2O9(SBT)/HfO2/Si. SiON/Si substrates for FeFETs were prepared by rapid thermal oxidation (RTO) in O2 at 1000 °C and subsequent rapid thermal nitridation (RTN) in NH3 at various temperatures in the range 950-1150 °C. The electrical properties of the Pt/SBT/HfO2/SiON/Si FeFET were compared with those of reference FETs, i.e. Pt/SBT/HfO2 gate stacks formed on Si substrates subjected to various treatments: SiNx/Si formed by RTN, SiO2/Si formed by RTO and untreated Si. The Pt/SBT/HfO2/SiON/Si FeFET had a larger memory window than all the other reference FeFETs, particularly at low operation voltages when the RTN temperature was 1050 °C.

  7. Polynomial threshold functions and Boolean threshold circuits

    DEFF Research Database (Denmark)

    Hansen, Kristoffer Arnsfelt; Podolskii, Vladimir V.

    2013-01-01

    of secondary interest. We show that PTFs on general Boolean domains are tightly connected to depth two threshold circuits. Our main results in regard to this connection are: PTFs of polynomial length and polynomial degree compute exactly the functions computed by THRMAJ circuits. An exponential length lower...... bound for PTFs that holds regardless of degree, thereby extending known lower bounds for THRMAJ circuits. We generalize two-party unbounded error communication complexity to the multi-party number-on-the-forehead setting, and show that communication lower bounds for 3-player protocols would yield size...... lower bounds for THRTHR circuits. We obtain several other results about PTFs. These include relationships between weight and degree of PTFs, and a degree lower bound for PTFs of constant length. We also consider a variant of PTFs over the max-plus algebra. We show that they are connected to PTFs over...

  8. Design techniques for low-voltage analog integrated circuits

    Science.gov (United States)

    Rakús, Matej; Stopjaková, Viera; Arbet, Daniel

    2017-08-01

    In this paper, a review and analysis of different design techniques for (ultra) low-voltage integrated circuits (IC) are performed. This analysis shows that the most suitable design methods for low-voltage analog IC design in a standard CMOS process include techniques using bulk-driven MOS transistors, dynamic threshold MOS transistors and MOS transistors operating in weak or moderate inversion regions. The main advantage of such techniques is that there is no need for any modification of standard CMOS structure or process. Basic circuit building blocks like differential amplifiers or current mirrors designed using these approaches are able to operate with the power supply voltage of 600 mV (or even lower), which is the key feature towards integrated systems for modern portable applications.

  9. Adaptive Voltage Management Enabling Energy Efficiency in Nanoscale Integrated Circuits

    Science.gov (United States)

    Shapiro, Alexander E.

    Battery powered devices emphasize energy efficiency in modern sub-22 nm CMOS microprocessors rendering classic power reduction solutions not sufficient. Classical solutions that reduce power consumption in high performance integrated circuits are superseded with novel and enhanced power reduction techniques to enable the greater energy efficiency desired in modern microprocessors and emerging mobile platforms. Dynamic power consumption is reduced by operating over a wide range of supply voltages. This region of operation is enabled by a high speed and power efficient level shifter which translates low voltage digital signals to higher voltages (and vice versa), a key component that enables communication among circuits operating at different voltage levels. Additionally, optimizing the wide supply voltage range of signals propagating across long interconnect enables greater energy savings. A closed-form delay model supporting wide voltage range is developed to enable this capability. The model supports an ultra-wide voltage range from nominal voltages to subthreshold voltages, and a wide range of repeater sizes. To mitigate the drawback of lower operating speed at reduced supply voltages, the high performance exhibited by MOS current mode logic technology is exploited. High performance and energy efficient circuits are enabled by combining this logic style with power efficient near threshold circuits. Many-core systems that operate at high frequencies and process highly parallel workloads benefit from this combination of MCML with NTC. Due to aggressive scaling, static power consumption can in some cases overshadow dynamic power. Techniques to lower leakage power have therefore become an important objective in modern microprocessors. To address this issue, an adaptive power gating technique is proposed. This technique utilizes high levels of granularity to save additional leakage power when a circuit is active as opposed to standard power gating that saves static

  10. Ultra-low threshold polariton condensation

    CERN Document Server

    Steger, Mark; Alberi, Kirstin; Mascarenhas, Angelo; Snoke, David W; Pfeiffer, Loren N; West, Ken

    2016-01-01

    We demonstrate condensation of microcavity polaritons with a very sharp threshold occuring at two orders of magnitude lower pump intensity than previous demonstrations of condensation. The long cavity-lifetime and trapping and pumping geometries are crucial to the realization of this low threshold. Polariton condensation, or "polariton lasing" has long been proposed as a promising source of coherent light at lower threshold than traditional lasing, and these results suggest methods to bring this threshold even lower.

  11. High voltage bus and auxiliary heater control system for an electric or hybrid vehicle

    Science.gov (United States)

    Murty, Balarama Vempaty

    2000-01-01

    A control system for an electric or hybrid electric vehicle includes a vehicle system controller and a control circuit having an electric immersion heater. The heater is electrically connected to the vehicle's high voltage bus and is thermally coupled to a coolant loop containing a heater core for the vehicle's climate control system. The system controller responds to cabin heat requests from the climate control system by generating a pulse width modulated signal that is used by the control circuit to operate the heater at a duty cycle appropriate for the amount of cabin heating requested. The control system also uses the heater to dissipate excess energy produced by an auxiliary power unit and to provide electric braking when regenerative braking is not desirable and manual braking is not necessary. The control system further utilizes the heater to provide a safe discharge of a bank of energy storage capacitors following disconnection of the battery or one of the high voltage connectors used to transmit high voltage operating power to the various vehicle systems. The control circuit includes a high voltage clamping circuit that monitors the voltage on the bus and operates the heater to clamp down the bus voltage when it exceeds a pre-selected maximum voltage. The control system can also be used to phase in operation of the heater when the bus voltage exceeds a lower threshold voltage and can be used to phase out the auxiliary power unit charging and regenerative braking when the battery becomes fully charged.

  12. Resilient architecture design for voltage variation

    CERN Document Server

    Reddi, Vijay Janapa

    2013-01-01

    Shrinking feature size and diminishing supply voltage are making circuits sensitive to supply voltage fluctuations within the microprocessor, caused by normal workload activity changes. If left unattended, voltage fluctuations can lead to timing violations or even transistor lifetime issues that degrade processor robustness. Mechanisms that learn to tolerate, avoid, and eliminate voltage fluctuations based on program and microarchitectural events can help steer the processor clear of danger, thus enabling tighter voltage margins that improve performance or lower power consumption. We describe

  13. Threshold Circuit Lower Bounds on Cryptographic Functions

    NARCIS (Netherlands)

    Kiltz, E.; Simon, H.U.

    2005-01-01

    In this work, we are interested in non-trivial upper bounds on the spectral norm of binary matrices $M$ from {-1, 1} $^{N × N}$. It is known that the distributed Boolean function represented by $M$ is hard to compute in various restricted models of computation if the spectral norm is bounded from ab

  14. Hydrodynamics of sediment threshold

    Science.gov (United States)

    Ali, Sk Zeeshan; Dey, Subhasish

    2016-07-01

    A novel hydrodynamic model for the threshold of cohesionless sediment particle motion under a steady unidirectional streamflow is presented. The hydrodynamic forces (drag and lift) acting on a solitary sediment particle resting over a closely packed bed formed by the identical sediment particles are the primary motivating forces. The drag force comprises of the form drag and form induced drag. The lift force includes the Saffman lift, Magnus lift, centrifugal lift, and turbulent lift. The points of action of the force system are appropriately obtained, for the first time, from the basics of micro-mechanics. The sediment threshold is envisioned as the rolling mode, which is the plausible mode to initiate a particle motion on the bed. The moment balance of the force system on the solitary particle about the pivoting point of rolling yields the governing equation. The conditions of sediment threshold under the hydraulically smooth, transitional, and rough flow regimes are examined. The effects of velocity fluctuations are addressed by applying the statistical theory of turbulence. This study shows that for a hindrance coefficient of 0.3, the threshold curve (threshold Shields parameter versus shear Reynolds number) has an excellent agreement with the experimental data of uniform sediments. However, most of the experimental data are bounded by the upper and lower limiting threshold curves, corresponding to the hindrance coefficients of 0.2 and 0.4, respectively. The threshold curve of this study is compared with those of previous researchers. The present model also agrees satisfactorily with the experimental data of nonuniform sediments.

  15. A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs

    Institute of Scientific and Technical Information of China (English)

    Sanjoy Deb; Saptarsi Ghosh; N Basanta Singh; A K De; Subir Kumar Sarkar

    2011-01-01

    A generalized threshold voltage model based on two-dimensional Poisson analysis has been developed for SOI/SON MOSFETs.Different short channel field effects,such as fringing fields,junction-induced lateral fields and substrate fields,are carefully investigated,and the related drain-induced barrier-lowering effects are incorporated in the analytical threshold voltage model.Through analytical model-based simulation,the threshold voltage roll-off and subthreshold slope for both structures are compared for different operational and structural parameter variations.Results of analytical simulation are compared with the results of the ATLAS 2D physicsbased simulator for verification of the analytical model.The performance of an SON MOSFET is found to be significantly different from a conventional SOI MOSFET.The short channel effects are found to be reduced in an SON,thereby resulting in a lower threshold voltage roll-offand a smaller subthreshold slope.This type of analysis is quite useful to figure out the performance improvement of SON over SOI structures for next generation short channel MOS devices.

  16. Over-voltage protection system and method

    Energy Technology Data Exchange (ETDEWEB)

    Chi, Song; Dong, Dong; Lai, Rixin

    2017-05-02

    An over-voltage protection system includes an electronic valve connected across two terminals of a circuit and an over-voltage detection circuit connected across one of the plurality of semiconductor devices for detecting an over-voltage across the circuit. The electronic valve includes a plurality of semiconductor devices connected in series. The over-voltage detection circuit includes a voltage divider circuit connected to a break-over diode in a way to provide a representative low voltage to the break-over diode and an optocoupler configured to receive a current from the break-over diode when the representative low voltage exceeds a threshold voltage of the break-over diode indicating an over-voltage condition. The representative low voltage provided to the break-over diode represents a voltage across the one semiconductor device. A plurality of self-powered gate drive circuits are connected to the plurality of semiconductor devices, wherein the plurality of self-powered gate drive circuits receive over-voltage triggering pulses from the optocoupler during the over-voltage condition and switch on the plurality of semiconductor devices to bypass the circuit.

  17. Comparação dos resultados do limiar de detectabilidade de voz por meio de material gravado e a viva voz Comparing the results of lower voice detection thresholds by means of recorded material and live voices

    Directory of Open Access Journals (Sweden)

    Angela Ribas

    2008-12-01

    Full Text Available OBJETIVO: comparar os resultados do teste denominado limiar de detectabilidade de voz, utilizando-se uma lista de palavras trissilábicas previamente gravadas e à viva voz em indivíduos com audiograma de configuração plana. MÉTODOS: participaram da pesquisa 60 indivíduos (120 orelhas com exame audiométrico dentro dos padrões da normalidade e audiometria tonal de configuração plana, sem intercorrências auditivas, em faixa etária de 20 a 30 anos. Aplicou-se o teste à viva voz e com material gravado, em cabine tratada acusticamente, por meio do audiômetro AC40 e com o auxílio de um cd player acoplado. RESULTADOS: o limiar de detectabilidade de voz foi encontrado 10 dB melhor que a média tritonal em 35 orelhas (58,5% da amostra quando realizado a viva-voz e em sete orelhas (11,5% quando realizado com material gravado; e foi encontrado 5 dB pior que a média tritonal em uma orelha (1,5% quando realizado a viva-voz e em 23 orelhas (38% com material gravado. CONCLUSÃO: a ao utilizar-se material gravado para o estabelecimento do LDV em curvas de configuração plana, deve-se considerar como padrão de normalidade níveis de intensidade iguais à média tritonal ou pior em 5 dB e b evidenciou-se diferença entre os resultados obtidos com material gravado e a viva voz, o que demonstra a importância da utilização de testes gravados para determinação dos limiares auditivos na logoaudiometria.PURPOSE: to compare the results of the test referred to as voice detection lower thresholds, using a previously-recorded list of trisyllabic words and in live voice in individuals with flat configuration audiogram. METHODS: 60 subjects (120 ears took part in the study, each with an audiometric exam within normal patterns and tonal audiometry at a flat configuration, without auditory incidents, in the age group going from 20 to 30. The test was given with a live voice and with recorded material, in an acoustically-managed booth, by means of an AC40

  18. Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer

    CERN Document Server

    Bajaj, Sanyam; Krishnamoorthy, Sriram; Hung, Ting-Hsiang; Rajan, Siddharth

    2015-01-01

    A high threshold voltage enhancement-mode GaN HEMT with p-type doped buffer is discussed and simulated. Analytical expressions are derived to explain the role of buffer capacitance in designing and enhancing threshold voltage. Simulations of the proposed device with p-type buffer show threshold voltages above 5 V, and a positive shift in threshold voltage as the oxide capacitance is reduced, thus enabling threshold voltage tunability over an unprecedented range for GaN-based HEMTs. The electric field profiles, breakdown performance, on-resistance and delay tradeoffs in the proposed pGaN back HEMT device are also discussed.

  19. Accurate Switched-Voltage voltage averaging circuit

    OpenAIRE

    金光, 一幸; 松本, 寛樹

    2006-01-01

    Abstract ###This paper proposes an accurate Switched-Voltage (SV) voltage averaging circuit. It is presented ###to compensated for NMOS missmatch error at MOS differential type voltage averaging circuit. ###The proposed circuit consists of a voltage averaging and a SV sample/hold (S/H) circuit. It can ###operate using nonoverlapping three phase clocks. Performance of this circuit is verified by PSpice ###simulations.

  20. Voltage-Controlled Floating Resistor Using DDCC

    Directory of Open Access Journals (Sweden)

    M. Kumngern

    2011-04-01

    Full Text Available This paper presents a new simple configuration to realize the voltage-controlled floating resistor, which is suitable for integrated circuit implementation. The proposed resistor is composed of three main components: MOS transistor operating in the non-saturation region, DDCC, and MOS voltage divider. The MOS transistor operating in the non-saturation region is used to configure a floating linear resistor. The DDCC and the MOS transistor voltage divider are used for canceling the nonlinear component term of MOS transistor in the non-saturation region to obtain a linear current/voltage relationship. The DDCC is employed to provide a simple summer of the circuit. This circuit offers an ease for realizing the voltage divider circuit and the temperature effect that includes in term of threshold voltage can be compensated. The proposed configuration employs only 16 MOS transistors. The performances of the proposed circuit are simulated with PSPICE to confirm the presented theory.

  1. Threshold Determination and Analysis of Laser Pulse Range Finder

    Institute of Scientific and Technical Information of China (English)

    殷聪; 韩绍坤; 刘巽亮; 张化朋; 赵跃进

    2003-01-01

    Under different conditions, the highest detection probability should be acquired while receiving laser echo during laser pulse range finding. The threshold voltage of the signal detection can be set corresponding to different conditions by using resistor network. As a feedback loop, automatic noise threshold circuit could change the threshold voltage following the noise level. The threshold can track the noise closely, rapidly and accurately by adopting this combination. Therefore, the receiving capability of laser echo receiving system will be maximized, and it can detect weaker laser pulse from noise.

  2. Voltage-Sensitive Load Controllers for Voltage Regulation and Increased Load Factor in Distribution Systems

    DEFF Research Database (Denmark)

    Douglass, Philip James; Garcia-Valle, Rodrigo; Østergaard, Jacob

    2014-01-01

    consumption which can be mapped to temperature setpoint offsets of thermostat controlled loads. In networks where a lower voltage level corresponds to high system load (and vice versa), this controller acts to regulate voltage and increase the load factor. Simulations are conducted on low- and medium-voltage......This paper presents a novel controller design for controlling appliances based on local measurements of voltage. The controller finds the normalized voltage deviation accounting for the sensitivity of voltage measurements to appliance state. The controller produces a signal indicating desired power...... distribution systems with residential loads including voltage-sensitive water heaters. In low-voltage systems, the results of the simulations show the controller to be effective at reducing the extremes of voltage and increasing the load factor while respecting end-use temperature constraints. In medium-voltage...

  3. Analytical modeling of Schottky tunneling source impact ionization MOSFET with reduced breakdown voltage

    Directory of Open Access Journals (Sweden)

    Sangeeta Singh

    2016-03-01

    Full Text Available In this paper, we have investigated a novel Schottky tunneling source impact ionization MOSFET (STS-IMOS to lower the breakdown voltage of conventional impact ionization MOS (IMOS and developed an analytical model for the same. In STS-IMOS there is an accumulative effect of both impact ionization and source induced barrier tunneling. The silicide source offers very low parasitic resistance, the outcome of which is an increment in voltage drop across the intrinsic region for the same applied bias. This reduces operating voltage and hence, it exhibits a significant reduction in both breakdown and threshold voltage. STS-IMOS shows high immunity against hot electron damage. As a result of this the device reliability increases magnificently. The analytical model for impact ionization current (Iii is developed based on the integration of ionization integral (M. Similarly, to get Schottky tunneling current (ITun expression, Wentzel–Kramers–Brillouin (WKB approximation is employed. Analytical models for threshold voltage and subthreshold slope is optimized against Schottky barrier height (ϕB variation. The expression for the drain current is computed as a function of gate-to-drain bias via integral expression. It is validated by comparing it with the technology computer-aided design (TCAD simulation results as well. In essence, this analytical framework provides the physical background for better understanding of STS-IMOS and its performance estimation.

  4. Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6 - 1 V); Comportement en dose cumulee de transistors DTMOS (MOS a tension de seuil dynamique) en technologie SOI partiellement desertee pour applications a tres basse tension d'alimentation (0.6 - 1 V)

    Energy Technology Data Exchange (ETDEWEB)

    Ferlet-Cavrois, V.; Musseau, O.; Leray, J.L. [CEA Bruyeres le Chatel, DRIF, 91 (France); Faynot, O.; Raynaud, C.; Pelloie, J.L. [CEA Grenoble, Lab. d' Electronique et de Technologie de l' Informatique LETI, 38 (France)

    1999-07-01

    In this paper, we presented two DTMOS architectures processed with a partially depleted SOI technology. The first architecture, DTMOS without limiting transistor, is dedicated to ultra-low voltage applications, at 0.6 V. For 1V applications, the second architecture, DTMOS with limiting transistor, needs an additional transistor to limit the body-source diode current. The total dose irradiation of both DTMOS architectures induces no change of the drain current, but an increase of the body-source diode current. Total dose induced trapped charge in the buried oxide increases the body potential of the DTMOS transistor. It induces an increase of the current flow at the back interface of the silicon film. Irradiation of complex circuits using DTMOS transistors would lead to a degradation of the stand-by consumption. (authors)

  5. SPICE model of memristive devices with threshold

    CERN Document Server

    Pershin, Y V

    2013-01-01

    Although memristive devices with threshold voltages are the norm rather than the exception in experimentally realizable systems, their SPICE programming has not yet been suggested. Here, we show how to implement such systems in the SPICE environment. We expect this implementation to find widespread use in circuits design and testing.

  6. Near threshold computing technology, methods and applications

    CERN Document Server

    Silvano, Cristina

    2016-01-01

    This book explores near-threshold computing (NTC), a design-space using techniques to run digital chips (processors) near the lowest possible voltage.  Readers will be enabled with specific techniques to design chips that are extremely robust; tolerating variability and resilient against errors.  Variability-aware voltage and frequency allocation schemes will be presented that will provide performance guarantees, when moving toward near-threshold manycore chips.  ·         Provides an introduction to near-threshold computing, enabling reader with a variety of tools to face the challenges of the power/utilization wall; ·         Demonstrates how to design efficient voltage regulation, so that each region of the chip can operate at the most efficient voltage and frequency point; ·         Investigates how performance guarantees can be ensured when moving towards NTC manycores through variability-aware voltage and frequency allocation schemes.  .

  7. Improving transition voltage spectroscopy of molecular junctions

    DEFF Research Database (Denmark)

    Markussen, Troels; Chen, Jingzhe; Thygesen, Kristian Sommer

    2011-01-01

    Transition voltage spectroscopy (TVS) is a promising spectroscopic tool for molecular junctions. The principles in TVS is to find the minimum on a Fowler-Nordheim plot where ln(I/V2) is plotted against 1/V and relate the voltage at the minimum Vmin to the closest molecular level. Importantly, Vmin...... is approximately half the voltage required to see a peak in the dI/dV curve. Information about the molecular level position can thus be obtained at relatively low voltages. In this work we show that the molecular level position can be determined at even lower voltages, Vmin(α), by finding the minimum of ln...

  8. Evaluation of the threshold trimming method for micro inertial fluidic switch based on electrowetting technology

    Directory of Open Access Journals (Sweden)

    Tingting Liu

    2014-03-01

    Full Text Available The switch based on electrowetting technology has the advantages of no moving part, low contact resistance, long life and adjustable acceleration threshold. The acceleration threshold of switch can be fine-tuned by adjusting the applied voltage. This paper is focused on the electrowetting properties of switch and the influence of microchannel structural parameters, applied voltage and droplet volume on acceleration threshold. In the presence of process errors of micro inertial fluidic switch and measuring errors of droplet volume, there is a deviation between test acceleration threshold and target acceleration threshold. Considering the process errors and measuring errors, worst-case analysis is used to analyze the influence of parameter tolerance on the acceleration threshold. Under worst-case condition the total acceleration threshold tolerance caused by various errors is 9.95%. The target acceleration threshold can be achieved by fine-tuning the applied voltage. The acceleration threshold trimming method of micro inertial fluidic switch is verified.

  9. Weights of Exact Threshold Functions

    DEFF Research Database (Denmark)

    Babai, László; Hansen, Kristoffer Arnsfelt; Podolskii, Vladimir V.

    2010-01-01

    We consider Boolean exact threshold functions defined by linear equations, and in general degree d polynomials. We give upper and lower bounds on the maximum magnitude (absolute value) of the coefficients required to represent such functions. These bounds are very close and in the linear case...

  10. Shaft Voltage and Life of Bearing electric-erosion for the Brushless DC Motor

    Science.gov (United States)

    Maetani, Tatsuo; Isomura, Yoshinori; Komiyama, Hiroshi; Morimoto, Shigeo

    This paper describes the life of noise of bearing electro-erosion in the shaft voltage of brushless DC motors. We confirmed that shaft voltage is suppressed to equal to or less than the dielectric breakdown voltage of bearing lubricant in the insulated rotor proposed for suppression of shaft voltage. However, since bearing electro-erosion appears over time along with the deterioration of noise performance, the threshold of the shaft voltage to secure noise performance over long periods of time is necessary. Therefore, the threshold of the shaft voltage that influences the life of noise was obtained in acceleration tests.

  11. Threshold Generation of Signcryption

    Institute of Scientific and Technical Information of China (English)

    ZHANGFutai; JIDongyao; WANGYumin

    2003-01-01

    Signcryption is a new cryptographic primitive wiich simultaneously fulfills both the functions of digital signature and public key encryption in a logically singlestep,and with a cost significantly lower than that required by "signature followed by encryption".It has many applications in such areas as electronic cash payment systems,secure and authenticated key establishment,secure multicasting over the Internet,authenticated key recovery,etc..In secure and authenticated group communication there is a need for threshold generation of signcryption.In this paper,we propose a protocol for threshold generation of signcryption using the techniques of verifiable secret sharing(VSS)and secure multi-party computation (MPC).In the protocol,any t or more honest members can efficiently generate valid signcryption text of a given message,while the adversary whole corrupts up to t-1 group members cannot forge any valid signcryption text.The protocol of computing reciprocals of secrets presented by R.Gennaro,S.Jarecki,H.Krawczyk,and T.Rabin is also modified so that the efficiency is improved.

  12. Coloring geographical threshold graphs

    Energy Technology Data Exchange (ETDEWEB)

    Bradonjic, Milan [Los Alamos National Laboratory; Percus, Allon [Los Alamos National Laboratory; Muller, Tobias [EINDHOVEN UNIV. OF TECH

    2008-01-01

    We propose a coloring algorithm for sparse random graphs generated by the geographical threshold graph (GTG) model, a generalization of random geometric graphs (RGG). In a GTG, nodes are distributed in a Euclidean space, and edges are assigned according to a threshold function involving the distance between nodes as well as randomly chosen node weights. The motivation for analyzing this model is that many real networks (e.g., wireless networks, the Internet, etc.) need to be studied by using a 'richer' stochastic model (which in this case includes both a distance between nodes and weights on the nodes). Here, we analyze the GTG coloring algorithm together with the graph's clique number, showing formally that in spite of the differences in structure between GTG and RGG, the asymptotic behavior of the chromatic number is identical: {chi}1n 1n n / 1n n (1 + {omicron}(1)). Finally, we consider the leading corrections to this expression, again using the coloring algorithm and clique number to provide bounds on the chromatic number. We show that the gap between the lower and upper bound is within C 1n n / (1n 1n n){sup 2}, and specify the constant C.

  13. Oscillatory threshold logic.

    Science.gov (United States)

    Borresen, Jon; Lynch, Stephen

    2012-01-01

    In the 1940s, the first generation of modern computers used vacuum tube oscillators as their principle components, however, with the development of the transistor, such oscillator based computers quickly became obsolete. As the demand for faster and lower power computers continues, transistors are themselves approaching their theoretical limit and emerging technologies must eventually supersede them. With the development of optical oscillators and Josephson junction technology, we are again presented with the possibility of using oscillators as the basic components of computers, and it is possible that the next generation of computers will be composed almost entirely of oscillatory devices. Here, we demonstrate how coupled threshold oscillators may be used to perform binary logic in a manner entirely consistent with modern computer architectures. We describe a variety of computational circuitry and demonstrate working oscillator models of both computation and memory.

  14. Reduced Voltage Scaling in Clock Distribution Networks

    Directory of Open Access Journals (Sweden)

    Khader Mohammad

    2009-01-01

    Full Text Available We propose a novel circuit technique to generate a reduced voltage swing (RVS signals for active power reduction on main buses and clocks. This is achieved without performance degradation, without extra power supply requirement, and with minimum area overhead. The technique stops the discharge path on the net that is swinging low at a certain voltage value. It reduces active power on the target net by as much as 33% compared to traditional full swing signaling. The logic 0 voltage value is programmable through control bits. If desired, the reduced-swing mode can also be disabled. The approach assumes that the logic 0 voltage value is always less than the threshold voltage of the nMOS receivers, which eliminate the need of the low to high voltage translation. The reduced noise margin and the increased leakage on the receiver transistors using this approach have been addressed through the selective usage of multithreshold voltage (MTV devices and the programmability of the low voltage value.

  15. Negative voltage bandgap reference with multilevel curvature compensation technique

    Science.gov (United States)

    Xi, Liu; Qian, Liu; Xiaoshi, Jin; Yongrui, Zhao; Lee, Jong-Ho

    2016-05-01

    A novel high-order curvature compensation negative voltage bandgap reference (NBGR) based on a novel multilevel compensation technique is introduced. Employing an exponential curvature compensation (ECC) term with many high order terms in itself, in a lower temperature range (TR) and a multilevel curvature compensation (MLCC) term in a higher TR, a flattened and better effect of curvature compensation over the TR of 165 °C (-40 to 125 °C) is realised. The MLCC circuit adds two convex curves by using two sub-threshold operated NMOS. The proposed NBGR implemented in the Central Semiconductor Manufacturing Corporation (CSMC) 0.5 μm BCD technology demonstrates an accurate voltage of -1.183 V with a temperature coefficient (TC) as low as 2.45 ppm/°C over the TR of 165 °C at a -5.0 V power supply; the line regulation is 3 mV/V from a -5 to -2 V supply voltage. The active area of the presented NBGR is 370 × 180 μm2. Project supported by the Fund of Liaoning Province Education Department (No. L2013045).

  16. Sub-threshold synchronizer

    NARCIS (Netherlands)

    Zhou, J.; Ashouei, M.; Kinniment, D.; Huisken, J.; Russell, G.; Yakovlev, A.

    2011-01-01

    Sub-threshold operation has been proven to be very effective to reduce the power consumption of circuits when high performance is not required. Future low power systems on chip are likely to consist of many sub-systems operating at different frequencies and VDDs from super-threshold to sub-threshold

  17. Threshold Concepts in Biochemistry

    Science.gov (United States)

    Loertscher, Jennifer

    2011-01-01

    Threshold concepts can be identified for any discipline and provide a framework for linking student learning to curricular design. Threshold concepts represent a transformed understanding of a discipline, without which the learner cannot progress and are therefore pivotal in learning in a discipline. Although threshold concepts have been…

  18. Successful application of Low Voltage Electron Microscopy to practical materials problems

    Energy Technology Data Exchange (ETDEWEB)

    Bell, David C., E-mail: dcb@seas.harvard.edu [School of Engineering and Applied Sciences, Harvard University, Cambridge, MA (United States); Center for Nanoscale Systems, Harvard University, Cambridge, MA (United States); Mankin, Max; Day, Robert W. [Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA (United States); Erdman, Natasha [JEOL USA Inc. Peabody, MA (United States)

    2014-10-15

    Low-voltage High-Resolution Electron Microscopy (LVHREM) has several advantages, including increased cross-sections for inelastic and elastic scattering, increased contrast per electron, decreased delocalization effects and reduced knock-on damage. Imaging at differing voltages has shown advantages for imaging materials that are knock-on damage sensitive. We show experimentally that different materials systems benefit from low voltage high-resolution microscopy. There are advantages for imaging single layer materials such as graphene at below the knock-on threshold; we present an example of imaging a graphene sheet at 40 kV. We have also examined mesoporous silica decorated with Pd nanoparticles and carbon black functionalized with Pd/Pt nanoparticles. In these cases we show that the lower voltage imaging maintains the structure of the surrounding matrix during imaging, whereas aberration correction provides the higher resolution for imaging the nanoparticle lattice. Perhaps surprisingly we show that zeolites damage preferentially by ionization effects (radiolysis). The current literature suggests that below incident energies of 40 kV the damage is mainly radiolitic, whereas at incident energies above 200 kV the knock-on damage and material sputtering will be the dominant effect. Our experimental observations support this conclusion and the effects we have observed at 40 kV are not indicative of knock-on damage. Other nanoscale materials such as thin silicon nanowires also benefit from lower voltage imaging. LVHREM imaging provides an excellent option to avoid beam damage to nanowires; our results suggest that LVHREM is suitable for nanowire-biological composites. Our experimental observations serve as a clear demonstration that even at 40 keV accelerating voltage, LVHREM can be used without inducing beam damage to locate dislocations and other crystalline defects, which may have adverse effects on nanowire device performance. Low voltage operation will likely

  19. Automatic voltage imbalance detector

    Science.gov (United States)

    Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

    1984-01-01

    A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  20. Spike-Threshold Variability Originated from Separatrix-Crossing in Neuronal Dynamics

    Science.gov (United States)

    Wang, Longfei; Wang, Hengtong; Yu, Lianchun; Chen, Yong

    2016-08-01

    The threshold voltage for action potential generation is a key regulator of neuronal signal processing, yet the mechanism of its dynamic variation is still not well described. In this paper, we propose that threshold phenomena can be classified as parameter thresholds and state thresholds. Voltage thresholds which belong to the state threshold are determined by the ‘general separatrix’ in state space. We demonstrate that the separatrix generally exists in the state space of neuron models. The general form of separatrix was assumed as the function of both states and stimuli and the previously assumed threshold evolving equation versus time is naturally deduced from the separatrix. In terms of neuronal dynamics, the threshold voltage variation, which is affected by different stimuli, is determined by crossing the separatrix at different points in state space. We suggest that the separatrix-crossing mechanism in state space is the intrinsic dynamic mechanism for threshold voltages and post-stimulus threshold phenomena. These proposals are also systematically verified in example models, three of which have analytic separatrices and one is the classic Hodgkin-Huxley model. The separatrix-crossing framework provides an overview of the neuronal threshold and will facilitate understanding of the nature of threshold variability.

  1. Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMTs SRAM unit and voltage level shifter using fluorine plasma treatment

    Science.gov (United States)

    Yonghe, Chen; Xuefeng, Zheng; Jincheng, Zhang; Xiaohua, Ma; Yue, Hao

    2016-05-01

    A GaN-based E/D mode direct-couple logic 6 transistors SRAM unit and a voltage level shifter were designed and fabricated. E-mode and D-mode AlGaN/GaN HEMTs were integrated in one wafer using fluorine plasma treatment and using a moderate AlGaN barrier layer heterojunction structure. The 6 transistors SRAM unit consists of two symmetrical E/D mode inverters and two E-mode switch HEMTs. The output low and high voltage of the SRAM unit are 0.95 and 0.07 V at a voltage supply of 1 V. The voltage level shifter lowers the supply voltage using four Ni-AlGaN Schottky diodes in a series at a positive supply voltage of 6 V and a negative supply voltage of -6 V. By controlling the states of inverter modules of the level shifter in turn, the level shifter offers two channel voltage outputs of -0.5 and -5 V. The flip voltage of the level shifter is 0.76 V. Both the SRAM unit and voltage shifter operate correctly, demonstrating the promising potential for GaN-based E/D mode digital and analog integrated circuits. Several considerations are proposed to avoid the influence of threshold voltage degradation of D-mode and E-mode HEMT on the operation of the circuit. Project supported by the National Natural Science Foundation of China (No. 61334002), the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory (No. ZHD201206), and the Program for New Century Excellent Talents in University (No. NCET-12-0915).

  2. High Voltage Pulse Testing Survey.

    Science.gov (United States)

    1985-10-01

    Cryogenic 23 E. Liquids 26 F. Solids 28 1. Polyethylene 28 2. Cross-Linked Polyethylene ( XLPE ) 29 3. Polyimide and Polyvenylchloride (PVC) 31 VI Benefits 35 A...Strength of XLPE Cables 29 vii * 4" I PROGRAM OBJECTIVES The Pulse Test Survey summarizes government, industry, and technical reports on high voltage pulse...system of silicone oil on a XLPE (cross-linked polyethylene) spacer tends to lower the impulse breakdown by approximately 10 percent. The negative impulse

  3. Threshold Concepts in Economics

    Science.gov (United States)

    Shanahan, Martin

    2016-01-01

    Purpose: The purpose of this paper is to examine threshold concepts in the context of teaching and learning first-year university economics. It outlines some of the arguments for using threshold concepts and provides examples using opportunity cost as an exemplar in economics. Design/ Methodology/Approach: The paper provides an overview of the…

  4. Low voltage lead titanate/Si one-transistor ferroelectric memory with good device characteristics

    Science.gov (United States)

    Sun, C. L.; Chen, S. Y.; Liao, C. C.; Chin, Albert

    2004-11-01

    We have developed one-transistor ferroelectric memory using lead titanate (PTO) as a gate dielectric directly formed on Si without any buffer layer. The PTO/Si metal-oxide-semiconductor field-effect transistor memory has shown a large threshold voltage shift of 1.6 V at only ±4V program/erase voltages. The corresponding good interface was achieved by lowering the anneal temperature to 450 °C. Besides the sharp capacitance change of 0.17μF/Vcm2, it was also evidenced by the high mobility of 169cm2/Vs close to high-κ HfO2. In addition, long retention >1000s and endurance >1011 stress cycles in the device suggested good memory characteristics.

  5. Technological Aspects: High Voltage

    CERN Document Server

    Faircloth, D C

    2013-01-01

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

  6. Stray voltage mitigation

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, B.; Piercy, R.; Dick, P. [Kinetrics Inc., Toronto, ON (Canada). Transmission and Distribution Technologies

    2008-04-09

    This report discussed issues related to farm stray voltage and evaluated mitigation strategies and costs for limiting voltage to farms. A 3-phase, 3-wire system with no neutral ground was used throughout North America before the 1930s. Transformers were connected phase to phase without any electrical connection between the primary and secondary sides of the transformers. Distribution voltage levels were then increased and multi-grounded neutral wires were added. The earth now forms a parallel return path for the neutral current that allows part of the neutral current to flow continuously through the earth. The arrangement is responsible for causing stray voltage. Stray voltage causes uneven milk production, increased incidences of mastitis, and can create a reluctance to drink water amongst cows when stray voltages are present. Off-farm sources of stray voltage include phase unbalances, undersized neutral wire, and high resistance splices on the neutral wire. Mitigation strategies for reducing stray voltage include phase balancing; conversion from single to 3-phase; increasing distribution voltage levels, and changing pole configurations. 22 refs., 5 tabs., 13 figs.

  7. High voltage engineering

    CERN Document Server

    Rizk, Farouk AM

    2014-01-01

    Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

  8. High voltage test techniques

    CERN Document Server

    Kind, Dieter

    2001-01-01

    The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

  9. Mitigation of Unbalanced Voltage Sags and Voltage Unbalance in CIGRE Low Voltage Distribution Network

    OpenAIRE

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar; Cecati, Carlo

    2013-01-01

    Any problem with voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM) etc. can be used to mitigate the voltage problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate unbalanced voltage sags and voltage unbalance in the CIGRE Low Voltage (LV) test network and net-works like this. The voltage unbala...

  10. Universal threshold enhancement

    CERN Document Server

    Patkós, András; Szépfalusy, P; Szep, Zs.

    2003-01-01

    By assuming certain analytic properties of the propagator, it is shown that universal features of the spectral function including threshold enhancement arise if a pole describing a particle at high temperature approaches in the complex energy plane the threshold position of its two-body decay with the variation of T. The case is considered, when one can disregard any other decay processes. The quality of the proposed description is demonstrated by comparing it with the detailed large N solution of the linear sigma model around the pole-threshold coincidence.

  11. Lowering of the firing voltage and reducing of the discharge delay time in alternating current plasma display panels by a discontinuous spin-coated LaB6 film on the MgO protective layer

    Directory of Open Access Journals (Sweden)

    Jiang Deng

    2014-03-01

    Full Text Available A spin coated LaB6 discontinuous film is covered on MgO protective layer to improve the discharge performance of alternating current plasma display panels. Under the premise of high transmittance of more than 90%, a very small amount of polycrystal LaB6 powders added in an organic solvent are chosen as the coating solution. The discharge characteristics results show that with 250 torr 5% Xe-Ne pressure, the firing voltage and discharge delay time of the test panel with LaB6/MgO double protective layer are decreased by 13.4% and 36.5%, respectively, compared with that of conventional MgO protective layer, likely owing to the low work function of LaB6. Furthermore, the aging time of the proposed structure is comparable to that of pure MgO protective layer. Therefore, it will not increase the production costs and is highly suitable to be applied for alternating current plasma display panels with low electrical power consumption.

  12. Lowering of the firing voltage and reducing of the discharge delay time in alternating current plasma display panels by a discontinuous spin-coated LaB{sub 6} film on the MgO protective layer

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Jiang, E-mail: dj78291@163.com [School of Physical Electronic, University of Electronic Science and Technology of China, No.4, Section 2, Jianshe North Road, 610054 Chengdu (China); Zeng, Baoqing [School of Physical Electronic, University of Electronic Science and Technology of China, No.4, Section 2, Jianshe North Road, 610054 Chengdu (China); Zhongshan Institute, University of Electronic Science and Technology of China, 528402 zhongshan (China); Wang, Xiaoju; Lin, Zulun; Qi, Kangcheng; Cao, Guichuan [School of Opto-electronic Information, University of Electronic Science and Technology of China, No.4, Section 2, Jianshe North Road, 610054 Chengdu (China)

    2014-03-15

    A spin coated LaB{sub 6} discontinuous film is covered on MgO protective layer to improve the discharge performance of alternating current plasma display panels. Under the premise of high transmittance of more than 90%, a very small amount of polycrystal LaB{sub 6} powders added in an organic solvent are chosen as the coating solution. The discharge characteristics results show that with 250 torr 5% Xe-Ne pressure, the firing voltage and discharge delay time of the test panel with LaB{sub 6}/MgO double protective layer are decreased by 13.4% and 36.5%, respectively, compared with that of conventional MgO protective layer, likely owing to the low work function of LaB{sub 6.} Furthermore, the aging time of the proposed structure is comparable to that of pure MgO protective layer. Therefore, it will not increase the production costs and is highly suitable to be applied for alternating current plasma display panels with low electrical power consumption.

  13. Cryogenic temperature dependence of the voltage transfer characteristics of CMOS inverters

    Science.gov (United States)

    Deen, M. J.

    1988-08-01

    The voltage transfer characteristics of CMOS inverters have been studied in detail as a function of temperature between 77 and 300 K and supply voltages between 2 and 20 V. The logic levels, maximum gain, unity gain points, noise margins and other parameters, such as ( VH - VL), all showed a marked improvement as the temperature was lowered. In particular, for one inverter with a supply of 5 V, the maximum gain increased from 57 to 105, ( VIH - VIL) decreased from 0.50 to 0.28 V and ( VH - VL) increased from 4.46 to 4.75 V on decreasing the temperature from 300 to 77 K. For all the inverters, these and other parameters showed a smooth monotonic improvement as the temperature was lowered. These and the other results obtained can be qualitatively explained as due to an increase in the absolute values in the threshold voltages of the PMOS and NMOS transistors and to an increase in the carrier mobility as the temperature was lowered.

  14. Hyper-arousal decreases human visual thresholds.

    Directory of Open Access Journals (Sweden)

    Adam J Woods

    Full Text Available Arousal has long been known to influence behavior and serves as an underlying component of cognition and consciousness. However, the consequences of hyper-arousal for visual perception remain unclear. The present study evaluates the impact of hyper-arousal on two aspects of visual sensitivity: visual stereoacuity and contrast thresholds. Sixty-eight participants participated in two experiments. Thirty-four participants were randomly divided into two groups in each experiment: Arousal Stimulation or Sham Control. The Arousal Stimulation group underwent a 50-second cold pressor stimulation (immersing the foot in 0-2° C water, a technique known to increase arousal. In contrast, the Sham Control group immersed their foot in room temperature water. Stereoacuity thresholds (Experiment 1 and contrast thresholds (Experiment 2 were measured before and after stimulation. The Arousal Stimulation groups demonstrated significantly lower stereoacuity and contrast thresholds following cold pressor stimulation, whereas the Sham Control groups showed no difference in thresholds. These results provide the first evidence that hyper-arousal from sensory stimulation can lower visual thresholds. Hyper-arousal's ability to decrease visual thresholds has important implications for survival, sports, and everyday life.

  15. Hyper-arousal decreases human visual thresholds.

    Science.gov (United States)

    Woods, Adam J; Philbeck, John W; Wirtz, Philip

    2013-01-01

    Arousal has long been known to influence behavior and serves as an underlying component of cognition and consciousness. However, the consequences of hyper-arousal for visual perception remain unclear. The present study evaluates the impact of hyper-arousal on two aspects of visual sensitivity: visual stereoacuity and contrast thresholds. Sixty-eight participants participated in two experiments. Thirty-four participants were randomly divided into two groups in each experiment: Arousal Stimulation or Sham Control. The Arousal Stimulation group underwent a 50-second cold pressor stimulation (immersing the foot in 0-2° C water), a technique known to increase arousal. In contrast, the Sham Control group immersed their foot in room temperature water. Stereoacuity thresholds (Experiment 1) and contrast thresholds (Experiment 2) were measured before and after stimulation. The Arousal Stimulation groups demonstrated significantly lower stereoacuity and contrast thresholds following cold pressor stimulation, whereas the Sham Control groups showed no difference in thresholds. These results provide the first evidence that hyper-arousal from sensory stimulation can lower visual thresholds. Hyper-arousal's ability to decrease visual thresholds has important implications for survival, sports, and everyday life.

  16. Life below the threshold.

    Science.gov (United States)

    Castro, C

    1991-01-01

    This article explains that malnutrition, poor health, and limited educational opportunities plague Philippine children -- especially female children -- from families living below the poverty threshold. Nearly 70% of households in the Philippines do not meet the required daily level of nutritional intake. Because it is often -- and incorrectly -- assumed that women's nutritional requirements are lower than men's, women suffer higher rates of malnutrition and poor health. A 1987 study revealed that 11.7% of all elementary students were underweight and 13.9% had stunted growths. Among elementary-school girls, 17% were malnourished and 40% suffered from anemia (among lactating mothers, more than 1/2 are anemic). A 1988 Program for Decentralized Educational Development study showed that grade VI students learn only about 1/2 of what they are supposed to learn. 30% of the children enrolled in grade school drop out before they reach their senior year. The Department of Education, Culture and Sports estimates that some 2.56 million students dropped out of school in l989. That same year, some 3.7 million children were counted as part of the labor force. In Manila alone, some 60,000 children work the streets, whether doing odd jobs or begging, or turning to crime or prostitution. the article tells the story of a 12 year-old girl named Ging, a 4th grader at a public school and the oldest child in a poor family of 6 children. The undernourished Ging dreams of a good future for her family and sees education as a way out of poverty; unfortunately, her time after school is spend working in the streets or looking after her family. She considers herself luckier than many of the other children working in the streets, since she at least has a family.

  17. Transformerless DC-DC Converter Using Cockcroft-Walton Voltage Multiplier to Obtain High DC Voltage

    Directory of Open Access Journals (Sweden)

    Meghana G Naik,

    2014-11-01

    Full Text Available In the present scenario the use of transformer for high voltages in converter circuit reduces the overall operating efficiency due to leakage inductance and use of transformer also increases the operational cost. . Therefore the proposed system is implemented with transformer less DC-DC converter so as to obtain high DC voltage with the use of nine stage Cockcroft-Walton (CW voltage multiplier. The proposed converter operates in CCM (continuous conduction mode, so that the converter switch stress, the switching losses are reduced. The DC voltage at the input of the proposed model is low and is boosted up by boost inductor (Ls in DC-DC converter stage and performs inverter operation. The number of stages in CW-voltage multiplier circuit is applied with low input pulsating DC (AC Voltage voltage where it is getting converted to high DC output voltage. The proposed converter switches operates at two independent frequencies, modulating (fsm andalternating (fsc frequency. The fsm operates at higher frequency of the output while the fsc operates at lower frequency of the desired output voltage ripple and the output ripples can be adjusted by the switch Sc1 and Sc2. The regulation of the output voltage is achieved by controlling the Duty ratio.The simulation is carried over by the MATLABSIMULINK.

  18. A Novel Power Reduction Technique for Dual-Threshold Domino Logic in Sub-65nm Technology

    Directory of Open Access Journals (Sweden)

    Tarun Kr. Gupta

    2013-03-01

    Full Text Available A novel technique for dual- threshold is proposed and examined with inputs and clock signals combinationin 65nm dual- threshold footerless domino circuit for reduced leakage current. In this technique a p-typeand an n-type leakage controlled transistor (LCTsare introduced between the pull-up and pull-downnetwork and the gate of one is controlled by the source of the other. A high-threshold transistor is used inthe input for reducing gate oxide leakage current which becomes dominant in nanometer technology.Simulations based on 65nm BISM4 model for proposeddomino circuits shows that CLIL (clock low andinput low and CHIH (clock high and input high state is ineffective for lowering leakage current. TheCLIH (clock low input high state is only effective to suppress the leakage at low and high temperatures forwide fan-in domino circuits but for AND gate CHIL (clock high input low state is preferred to reducetheleakage current. The proposed circuit technique forAND2, OR2, OR4 and OR8 circuits reduces the activepower consumption by 39.6% to 57.9% and by 32.4% to40.3% at low and high die temperaturesrespectively when compared to the standard dual-threshold voltage domino logic circuits.

  19. A Novel Power Reduction Technique for Dual-Threshold Domino Logic in Sub-65nm Technology

    Directory of Open Access Journals (Sweden)

    Tarun Kr. Gupta

    2013-02-01

    Full Text Available A novel technique for dual- threshold is proposed and examined with inputs and clock signals combinationin 65nm dual- threshold footerless domino circuit for reduced leakage current. In this technique a p-typeand an n-type leakage controlled transistor (LCTsare introduced between the pull-up and pull-downnetwork and the gate of one is controlled by the source of the other. A high-threshold transistor is used inthe input for reducing gate oxide leakage current which becomes dominant in nanometer technology.Simulations based on 65nm BISM4 model for proposeddomino circuits shows that CLIL (clock low andinput low and CHIH (clock high and input high state is ineffective for lowering leakage current. TheCLIH (clock low input high state is only effective to suppress the leakage at low and high temperatures forwide fan-in domino circuits but for AND gate CHIL (clock high input low state is preferred to reducetheleakage current. The proposed circuit technique forAND2, OR2, OR4 and OR8 circuits reduces the activepower consumption by 39.6% to 57.9% and by 32.4% to40.3% at low and high die temperaturesrespectively when compared to the standard dual-threshold voltage domino logic circuits.

  20. Quantum threshold group signature

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    In most situations, the signer is generally a single person. However, when the message is written on behalf of an organization, a valid message may require the approval or consent of several persons. Threshold signature is a solution to this problem. Generally speaking, as an authority which can be trusted by all members does not exist, a threshold signature scheme without a trusted party appears more attractive. Following some ideas of the classical Shamir’s threshold signature scheme, a quantum threshold group signature one is proposed. In the proposed scheme, only t or more of n persons in the group can generate the group signature and any t-1 or fewer ones cannot do that. In the verification phase, any t or more of n signature receivers can verify the message and any t-1 or fewer receivers cannot verify the validity of the signature.

  1. Efficient circular thresholding.

    Science.gov (United States)

    Lai, Yu-Kun; Rosin, Paul L

    2014-03-01

    Otsu's algorithm for thresholding images is widely used, and the computational complexity of determining the threshold from the histogram is O(N) where N is the number of histogram bins. When the algorithm is adapted to circular rather than linear histograms then two thresholds are required for binary thresholding. We show that, surprisingly, it is still possible to determine the optimal threshold in O(N) time. The efficient optimal algorithm is over 300 times faster than traditional approaches for typical histograms and is thus particularly suitable for real-time applications. We further demonstrate the usefulness of circular thresholding using the adapted Otsu criterion for various applications, including analysis of optical flow data, indoor/outdoor image classification, and non-photorealistic rendering. In particular, by combining circular Otsu feature with other colour/texture features, a 96.9% correct rate is obtained for indoor/outdoor classification on the well known IITM-SCID2 data set, outperforming the state-of-the-art result by 4.3%.

  2. A micro-power LDO with piecewise voltage foldback current limit protection

    Institute of Scientific and Technical Information of China (English)

    Wei Hailong; Liu Youbao; Guo Zhongjie; Liao Xue

    2012-01-01

    To achieve a constant current limit,low power consumption and high driving capability,a micro-power LDO with a piecewise voltage-foldback current-limit circuit is presented.The current-limit threshold is dynamically adjusted to achieve a maximum driving capability and lower quiescent current of only 300 nA.To increase the loop stability of the proposed LDO,a high impedance transconductance buffer under a micro quiescent current is designed for splitting the pole that exists at the gate of the pass transistor to the dominant pole,and a zero is designed for the purpose of the second pole phase compensation.The proposed LDO is fabricated in a BiCMOS process.The measurement results show that the short-circuit current of the LDO is 190 mA,the constant limit current under a high drop-out voltage is 440 mA,and the maximum load current under a low drop-out voltage is up to 800 mA.In addition,the quiescent current of the LDO is only 7 μA,the load regulation is about 0.56% on full scale,the line regulation is about 0.012%/V,the PSRR at 120 Hz is 58 dB and the drop-out voltage is only 70 mV when the load current is 250 mA.

  3. Voltage verification unit

    Science.gov (United States)

    Martin, Edward J.

    2008-01-15

    A voltage verification unit and method for determining the absence of potentially dangerous potentials within a power supply enclosure without Mode 2 work is disclosed. With this device and method, a qualified worker, following a relatively simple protocol that involves a function test (hot, cold, hot) of the voltage verification unit before Lock Out/Tag Out and, and once the Lock Out/Tag Out is completed, testing or "trying" by simply reading a display on the voltage verification unit can be accomplished without exposure of the operator to the interior of the voltage supply enclosure. According to a preferred embodiment, the voltage verification unit includes test leads to allow diagnostics with other meters, without the necessity of accessing potentially dangerous bus bars or the like.

  4. Transient demonstration of exciton behaviours in solid state cathodoluminescence under different driving voltage

    Institute of Scientific and Technical Information of China (English)

    Zhang Fu-Jun; Zhao Su-Ling; Xu Zheng; Huang Jin-Zhao; Xu Xu-Rong

    2007-01-01

    In the solid state cathodoluminescence (SSCL), organic materials were excited by hot electrons accelerated in silicon oxide (SiO2) layer under alternating current (AC). In this paper exciton behaviours were analysed by using transient spectra under different driving voltages. The threshold voltages of SSCL and exciton ionization were obtained from the transient spectra. The recombination radiation occurred when the driving voltage went beyond the threshold voltage of exciton ionization. Prom the transient spectrum of two kinds of luminescence (exciton emission and recombination radiation), it was demonstrated that recombination radiation should benefit from the exciton ionization.

  5. L-H Threshold Studies in NSTX

    Energy Technology Data Exchange (ETDEWEB)

    Kaye, S M; Battaglia, D; Bell, R E; Chang, C S; Hosea, J; Kugel, H; LeBlanc, B P; Meyer, H; Park, G Y

    2011-09-06

    Recent experiments in the low aspect ratio National Spherical Torus Experiment (NSTX) have been run in support of the high priority ITER and ITPA issue of access to the H-mode. Specifically, a series of experiments showed reduced power threshold values for deuterium vs helium plasmas, and for plasmas with lower current, lower triangularity and with lithium conditioning. Application of n=3 fields at the plasma edge resulted in higher power thresholds. To within the constraints of temporal and spatial resolutions, no systematic difference in T{sub e}, n{sub e}, p{sub e}, T{sub i}, v or their derivatives was found in discharges that transitioned into the H-mode versus those at slightly lower power that did not. Finally, H{sub 98y,2} {approx} 1 confinement quality could be achieved for powers just above the threshold power in ELM-free conditions.

  6. Survey of high voltage electron microscopy worldwide in 1998.

    Energy Technology Data Exchange (ETDEWEB)

    Allen, C. W.

    1998-03-05

    High voltage TEMs were introduced commercially thirty years ago, with the installations of 500 kV Hitachi instruments at the Universities of Nagoya and Tokyo. Since that time 53 commercial instruments, having maximum accelerating potentials of 0.5-3.5 MV, will have been delivered by the end of 1998. Table 1 summarizes the sites and some information regarding those HVEMS which are available in 1998. This corrects, updates and expands an earlier report of this sort [2]. There have been three commercial HVEM manufacturers: AEI (UK), Hitachi and JEOL (Japan). The proportion of the total number of HVEMS produced by each manufacturer is similar to that reflected in Table 1: AEI and Kratos/AEI (12), Hitachi (20) and JEOL (21). The term Kratos/AEI refers to instruments delivered after the takeover of AEI by Grates in the late 1970's. In Table 1 only maximum accelerating potentials are listed, which is generally also the design value for which the resolution for imaging was optimized. It is important to realize that in many applications, especially those studying irradiation effects, much lower voltages may be employed somewhat routinely to minimize atom displacements by the incident electron beam during analysis. These minimum values range from 100 kV for the AEI and Kratos/AEI instruments to typically 400 kV for the current generation of atomic resolution instruments, the latter being well above the thresholds for displacement in light elements such as Al and Si and for displacement of anions in many ceramic materials such as the high Tc superconductors, for example. An additional potential problem is electron-induced sputtering and differential sputtering (unequal sputtering rates in multicomponent materials), especially when accurate elemental microanalysis is being attempted. These same issues may arise for intermediate voltage TEMs as well, of course.

  7. Understanding Voltage Decay in Lithium-Rich Manganese-Based Layered Cathode Materials by Limiting Cutoff Voltage.

    Science.gov (United States)

    Yang, Jingsong; Xiao, Lifen; He, Wei; Fan, Jiangwei; Chen, Zhongxue; Ai, Xinping; Yang, Hanxi; Cao, Yuliang

    2016-07-27

    The effect of the cutoff voltages on the working voltage decay and cyclability of the lithium-rich manganese-based layered cathode (LRMO) was investigated by electrochemical measurements, electrochemical impedance spectroscopy, ex situ X-ray diffraction, transmission electron microscopy, and energy dispersive spectroscopy line scan technologies. It was found that both lower (2.0 V) and upper (4.8 V) cutoff voltages cause severe voltage decay with cycling due to formation of the spinel phase and migration of the transition metals inside the particles. Appropriate cutoff voltage between 2.8 and 4.4 V can effectively inhibit structural variation as the electrode demonstrates 92% capacity retention and indiscernible working voltage decay over 430 cycles. The results also show that phase transformation not only on high charge voltage but also on low discharge voltage should be addressed to obtain highly stable LRMO materials.

  8. LHC Longitudinal Single-Bunch Stability Threshold

    CERN Document Server

    Esteban Muller, Juan Federico; Baudrenghien, Philippe; Lasheen, Alexandre; Roggen, Toon; Shaposhnikova, Elena; Timko, Helga; CERN. Geneva. ATS Department

    2016-01-01

    The aim of the MD studies presented here was to determine with a reasonable accuracy the single-bunch longitudinal stability threshold in the LHC. The measurements were performed by placing along the ring 8 or 20 ‘single’ bunches with different intensities but similar longitudinal emittances. Then they were accelerated and bunch stability was observed at arrival to flat top. Combining the results of two measurement sessions, the single bunch stability threshold is estimated to be (2.4 ± 0.2) × 10^11 ppb for an emittance of 1.89 eVs (1.0 ns) at 6.5 TeV with 12 MV RF voltage. Measurements were taken during the MD session MD472 from 22:00 on 20th to 05:00 on 21st July 2015 and session MD365 from 17:00 on 26th to 01:00 on 27th August 2015.

  9. High Voltage Distribution

    Science.gov (United States)

    Norbeck, Edwin; Miller, Michael; Onel, Yasar

    2010-11-01

    For detector arrays that require 5 to 10 kV at a few microamps each for hundreds of detectors, using hundreds of HV power supplies is unreasonable. Bundles of hundreds of HV cables take up space that should be filled with detectors. A typical HV module can supply 1 ma, enough current for hundreds of detectors. It is better to use a single HV module and distribute the current as needed. We show a circuit that, for each detector, measures the current, cuts off the voltage if the current exceeds a set maximum, and allows the HV to be turned on or off from a control computer. The entire array requires a single HV cable and 2 or 3 control lines. This design provides the same voltage to all of the detectors, the voltage set by the single HV module. Some additional circuitry would allow a computer controlled voltage drop between the HV and each individual detector.

  10. Psychologic factors are related to some sensory pain thresholds but not nociceptive flexion reflex threshold in chronic whiplash.

    Science.gov (United States)

    Sterling, Michele; Hodkinson, Emily; Pettiford, Catherine; Souvlis, Tina; Curatolo, Michele

    2008-02-01

    Sensory hypersensitivity, central hyperexcitability [lowered nociceptive flexion reflex (NFR) thresholds], and psychologic distress are features of chronic whiplash. However, relationships between these substrates are not clear. This study tested the hypothesis that psychologic distress and catastrophization are correlated with sensory hypersensitivity and NFR responses in chronic whiplash. Pressure and thermal pain thresholds (mean values across 3 body sites), NFR threshold, and pain at threshold Visual Analog Scale were measured in 30 participants with chronic whiplash and 30 asymptomatic controls. Pain and disability levels Neck Disability Index, psychologic distress (GHQ-28), and catastrophization (PCS) were also measured in the whiplash group. Whiplash injured participants demonstrated lowered pain thresholds to pressure and cold (Pthresholds (P=0.003), and demonstrated above threshold levels of psychologic distress (GHQ-28) and levels of catastrophization comparable with other musculoskeletal conditions. There were no group differences for heat pain thresholds or pain at NFR threshold. In the whiplash group, PCS scores correlated moderately with cold pain threshold (r=0.51, P=0.01). In contrast, there were no significant correlations between GHQ-28 scores and pain threshold measures or between psychologic factors and NFR responses in whiplash participants. There were no significant correlations between psychologic factors and pain thresholds or NFR responses in controls. We have demonstrated that psychologic factors have some association with sensory hypersensitivity (cold pain threshold measures) in chronic whiplash but do not seem to influence spinal cord excitability. This suggests that psychologic disorders are important, but not the only, determinants of central hypersensitivity in whiplash patients.

  11. High voltage engineering fundamentals

    CERN Document Server

    Kuffel, E; Hammond, P

    1984-01-01

    Provides a comprehensive treatment of high voltage engineering fundamentals at the introductory and intermediate levels. It covers: techniques used for generation and measurement of high direct, alternating and surge voltages for general application in industrial testing and selected special examples found in basic research; analytical and numerical calculation of electrostatic fields in simple practical insulation system; basic ionisation and decay processes in gases and breakdown mechanisms of gaseous, liquid and solid dielectrics; partial discharges and modern discharge detectors; and over

  12. Ultra-low power high temperature and radiation hard complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) voltage reference.

    Science.gov (United States)

    Boufouss, El Hafed; Francis, Laurent A; Kilchytska, Valeriya; Gérard, Pierre; Simon, Pascal; Flandre, Denis

    2013-12-13

    This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40-200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si) performed at three different temperatures (room temperature, 100 °C and 200 °C). The maximum drift of the reference voltage V(REF) depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μW at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of V(REF) and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

  13. Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS Silicon-on-Insulator (SOI Voltage Reference

    Directory of Open Access Journals (Sweden)

    El Hafed Boufouss

    2013-12-01

    Full Text Available This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40–200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si performed at three different temperatures (room temperature, 100 °C and 200 °C. The maximum drift of the reference voltage VREF depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μ W at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of VREF and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

  14. Low-voltage gyrotrons

    Science.gov (United States)

    Glyavin, M. Yu.; Zavolskiy, N. A.; Sedov, A. S.; Nusinovich, G. S.

    2013-03-01

    For a long time, the gyrotrons were primarily developed for electron cyclotron heating and current drive of plasmas in controlled fusion reactors where a multi-megawatt, quasi-continuous millimeter-wave power is required. In addition to this important application, there are other applications (and their number increases with time) which do not require a very high power level, but such issues as the ability to operate at low voltages and have compact devices are very important. For example, gyrotrons are of interest for a dynamic nuclear polarization, which improves the sensitivity of the nuclear magnetic resonance spectroscopy. In this paper, some issues important for operation of gyrotrons driven by low-voltage electron beams are analyzed. An emphasis is made on the efficiency of low-voltage gyrotron operation at the fundamental and higher cyclotron harmonics. These efficiencies calculated with the account for ohmic losses were, first, determined in the framework of the generalized gyrotron theory based on the cold-cavity approximation. Then, more accurate, self-consistent calculations for the fundamental and second harmonic low-voltage sub-THz gyrotron designs were carried out. Results of these calculations are presented and discussed. It is shown that operation of the fundamental and second harmonic gyrotrons with noticeable efficiencies is possible even at voltages as low as 5-10 kV. Even the third harmonic gyrotrons can operate at voltages about 15 kV, albeit with rather low efficiency (1%-2% in the submillimeter wavelength region).

  15. High voltage pulse generator

    Science.gov (United States)

    Fasching, George E.

    1977-03-08

    An improved high-voltage pulse generator has been provided which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of a first one of the rectifiers connected between the first and second of the plurality of charging capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. Alternate circuits are provided for controlling the application of the charging voltage from a charging circuit to be applied to the parallel capacitors which provides a selection of at least two different intervals in which the charging voltage is turned "off" to allow the SCR's connecting the capacitors in series to turn "off" before recharging begins. The high-voltage pulse-generating circuit including the N capacitors and corresponding SCR's which connect the capacitors in series when triggered "on" further includes diodes and series-connected inductors between the parallel-connected charging capacitors which allow sufficiently fast charging of the capacitors for a high pulse repetition rate and yet allow considerable control of the decay time of the high-voltage pulses from the pulse-generating circuit.

  16. Higher vs. lower haemoglobin threshold for transfusion in septic shock

    DEFF Research Database (Denmark)

    Rygård, S L; Holst, L B; Wetterslev, J

    2017-01-01

    malignancy or metastatic cancer), in patients who had undergone surgery (elective or acute) and in patients with septic shock as defined by the new consensus definition: lactate above 2 mmol/l and the need for vasopressors to maintain a mean arterial pressure above 65 mmHg. RESULTS: The baseline...... characteristics were mostly similar between the two intervention groups in the different subgroups. There were no differences in the intervention effect on 90-day mortality in patients with chronic lung disease (test of interaction P = 0.31), haematological malignancy (P = 0.47), metastatic cancer (P = 0...

  17. A nanoscale piezoelectric transformer for low-voltage transistors.

    Science.gov (United States)

    Agarwal, Sapan; Yablonovitch, Eli

    2014-11-12

    A novel piezoelectric voltage transformer for low-voltage transistors is proposed. Placing a piezoelectric transformer on the gate of a field-effect transistor results in the piezoelectric transformer field-effect transistor that can switch at significantly lower voltages than a conventional transistor. The piezoelectric transformer operates by using one piezoelectric to squeeze another piezoelectric to generate a higher output voltage than the input voltage. Multiple piezoelectrics can be used to squeeze a single piezoelectric layer to generate an even higher voltage amplification. Coupled electrical and mechanical modeling in COMSOL predicts a 12.5× voltage amplification for a six-layer piezoelectric transformer. This would lead to more than a 150× reduction in the power needed for communications.

  18. Voltage scheduling for low power/energy

    Science.gov (United States)

    Manzak, Ali

    2001-07-01

    Power considerations have become an increasingly dominant factor in the design of both portable and desk-top systems. An effective way to reduce power consumption is to lower the supply voltage since voltage is quadratically related to power. This dissertation considers the problem of lowering the supply voltage at (i) the system level and at (ii) the behavioral level. At the system level, the voltage of the variable voltage processor is dynamically changed with the work load. Processors with limited sized buffers as well as those with very large buffers are considered. Given the task arrival times, deadline times, execution times, periods and switching activities, task scheduling algorithms that minimize energy or peak power are developed for the processors equipped with very large buffers. A relation between the operating voltages of the tasks for minimum energy/power is determined using the Lagrange multiplier method, and an iterative algorithm that utilizes this relation is developed. Experimental results show that the voltage assignment obtained by the proposed algorithm is very close (0.1% error) to that of the optimal energy assignment and the optimal peak power (1% error) assignment. Next, on-line and off-fine minimum energy task scheduling algorithms are developed for processors with limited sized buffers. These algorithms have polynomial time complexity and present optimal (off-line) and close-to-optimal (on-line) solutions. A procedure to calculate the minimum buffer size given information about the size of the task (maximum, minimum), execution time (best case, worst case) and deadlines is also presented. At the behavioral level, resources operating at multiple voltages are used to minimize power while maintaining the throughput. Such a scheme has the advantage of allowing modules on the critical paths to be assigned to the highest voltage levels (thus meeting the required timing constraints) while allowing modules on non-critical paths to be assigned

  19. Efficient Threshold Signature Scheme

    Directory of Open Access Journals (Sweden)

    Sattar J Aboud

    2012-01-01

    Full Text Available In this paper, we introduce a new threshold signature RSA-typed scheme. The proposed scheme has the characteristics of un-forgeable and robustness in random oracle model. Also, signature generation and verification is entirely non-interactive. In addition, the length of the entity signature participate is restricted by a steady times of the length of the RSA signature modulus. Also, the signing process of the proposed scheme is more efficient in terms of time complexity and interaction.

  20. Optimizing Retransmission Threshold in Wireless Sensor Networks.

    Science.gov (United States)

    Bi, Ran; Li, Yingshu; Tan, Guozhen; Sun, Liang

    2016-05-10

    The retransmission threshold in wireless sensor networks is critical to the latency of data delivery in the networks. However, existing works on data transmission in sensor networks did not consider the optimization of the retransmission threshold, and they simply set the same retransmission threshold for all sensor nodes in advance. The method did not take link quality and delay requirement into account, which decreases the probability of a packet passing its delivery path within a given deadline. This paper investigates the problem of finding optimal retransmission thresholds for relay nodes along a delivery path in a sensor network. The object of optimizing retransmission thresholds is to maximize the summation of the probability of the packet being successfully delivered to the next relay node or destination node in time. A dynamic programming-based distributed algorithm for finding optimal retransmission thresholds for relay nodes along a delivery path in the sensor network is proposed. The time complexity is O n Δ · max 1 ≤ i ≤ n { u i } , where u i is the given upper bound of the retransmission threshold of sensor node i in a given delivery path, n is the length of the delivery path and Δ is the given upper bound of the transmission delay of the delivery path. If Δ is greater than the polynomial, to reduce the time complexity, a linear programming-based ( 1 + p m i n ) -approximation algorithm is proposed. Furthermore, when the ranges of the upper and lower bounds of retransmission thresholds are big enough, a Lagrange multiplier-based distributed O ( 1 ) -approximation algorithm with time complexity O ( 1 ) is proposed. Experimental results show that the proposed algorithms have better performance.

  1. Voltage Regulators for Photovoltaic Systems

    Science.gov (United States)

    Delombard, R.

    1986-01-01

    Two simple circuits developed to provide voltage regulation for highvoltage (i.e., is greater than 75 volts) and low-voltage (i.e., is less than 36 volts) photovoltaic/battery power systems. Use of these circuits results in voltage regulator small, low-cost, and reliable, with very low power dissipation. Simple oscillator circuit controls photovoltaic-array current to regulate system voltage and control battery charging. Circuit senses battery (and system) voltage and adjusts array current to keep battery voltage from exceeding maximum voltage.

  2. Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process

    DEFF Research Database (Denmark)

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2016-01-01

    : off-state, sub-threshold region, and on-state in the linear region. A high voltage power MOSFET is designed in a partial Silicon on Insulator (SOI) process, with the bulk as a separate terminal. 3D plots and contour plots of the capacitances versus bias voltages for the transistor summarize...

  3. Studying Voltage Transformer Ferroresonance

    Directory of Open Access Journals (Sweden)

    Hamid Radmanesh

    2012-09-01

    Full Text Available This study studies the effect of Circuit Breaker Shunt Resistance (CBSR, Metal Oxide Vaistor (MOV and Neutral earth Resistance (NR on the control of ferroresonance in the voltage transformer. It is expected that NR can controlled ferroresonance better than MOV and CBSR. Study has been done on a one phase voltage transformer rated 100 VA, 275 kV. The simulation results reveal that considering the CBSR and MOV exhibits a great mitigating effect on ferroresonance overvoltages, but these resistances cannot control these phenomena for all range of parameters. By applying NR to the system structure, ferroresonance has been controlled and its amplitude has been damped for all parameters values.

  4. Improving transition voltage spectroscopy of molecular junctions

    Science.gov (United States)

    Markussen, Troels; Chen, Jingzhe; Thygesen, Kristian S.

    2011-04-01

    Transition voltage spectroscopy (TVS) is a promising spectroscopic tool for molecular junctions. The principles in TVS is to find the minimum on a Fowler-Nordheim plot where ln(I/V2) is plotted against 1/V and relate the voltage at the minimum Vmin to the closest molecular level. Importantly, Vmin is approximately half the voltage required to see a peak in the dI/dV curve. Information about the molecular level position can thus be obtained at relatively low voltages. In this work we show that the molecular level position can be determined at even lower voltages, Vmin(α), by finding the minimum of ln(I/Vα) with α<2. On the basis of a simple Lorentzian transmission model we analyze theoretical ab initio as well as experimental I-V curves and show that the voltage required to determine the molecular levels can be reduced by ~30% as compared to conventional TVS. As for conventional TVS, the symmetry/asymmetry of the molecular junction needs to be taken into account in order to gain quantitative information. We show that the degree of asymmetry may be estimated from a plot of Vmin(α) vs α.

  5. Threshold properties of a microcavity laser with submicroampere threshold current

    Energy Technology Data Exchange (ETDEWEB)

    Choquette, K.D.; Hou, H.Q.; Lear, K.L.; Chow, W.W.; Mar, A.; Geib, K.M.; Hammons, B.E.

    1996-02-01

    We report the threshold characteristics of small oxide-confined vertical-cavity surface emitting lasers. Abrupt threshold transitions 105 times the spontaneous emission background are obtained at injection currents as low as 470 nanoampere.

  6. Regular structures in 5CB liquid crystals under the joint action of ac and dc voltages

    Science.gov (United States)

    Aguirre, Luis E.; Anoardo, Esteban; Éber, Nándor; Buka, Ágnes

    2012-04-01

    A nematic liquid crystal with high, positive dielectric anisotropy (5CB) has been studied under the influence of the combined action of a dc and an ac electric field. Broad frequency, voltage, and cell thickness ranges were considered. Pattern morphologies were identified; the thresholds and critical wave numbers were measured and analyzed as a function of frequency, dc-to-ac voltage ratio, and thickness. The current-voltage characteristics were simultaneously detected.

  7. Comparison between intensity- duration thresholds and cumulative rainfall thresholds for the forecasting of landslide

    Science.gov (United States)

    Lagomarsino, Daniela; Rosi, Ascanio; Rossi, Guglielmo; Segoni, Samuele; Catani, Filippo

    2014-05-01

    This work makes a quantitative comparison between the results of landslide forecasting obtained using two different rainfall threshold models, one using intensity-duration thresholds and the other based on cumulative rainfall thresholds in an area of northern Tuscany of 116 km2. The first methodology identifies rainfall intensity-duration thresholds by means a software called MaCumBA (Massive CUMulative Brisk Analyzer) that analyzes rain-gauge records, extracts the intensities (I) and durations (D) of the rainstorms associated with the initiation of landslides, plots these values on a diagram, and identifies thresholds that define the lower bounds of the I-D values. A back analysis using data from past events can be used to identify the threshold conditions associated with the least amount of false alarms. The second method (SIGMA) is based on the hypothesis that anomalous or extreme values of rainfall are responsible for landslide triggering: the statistical distribution of the rainfall series is analyzed, and multiples of the standard deviation (σ) are used as thresholds to discriminate between ordinary and extraordinary rainfall events. The name of the model, SIGMA, reflects the central role of the standard deviations in the proposed methodology. The definition of intensity-duration rainfall thresholds requires the combined use of rainfall measurements and an inventory of dated landslides, whereas SIGMA model can be implemented using only rainfall data. These two methodologies were applied in an area of 116 km2 where a database of 1200 landslides was available for the period 2000-2012. The results obtained are compared and discussed. Although several examples of visual comparisons between different intensity-duration rainfall thresholds are reported in the international literature, a quantitative comparison between thresholds obtained in the same area using different techniques and approaches is a relatively undebated research topic.

  8. VOLTAGE REGULATORS ASYNCHRONOUS GENERATORS

    Directory of Open Access Journals (Sweden)

    Grigorash O. V.

    2015-06-01

    Full Text Available A promising is currently the use of asynchronous generators with capacitive excitation as a source of electricity in stand-alone power systems. Drive asynchronous generators may exercise as a thermal engine and wind wheel wind power plant or turbines of small hydropower plants. The article discusses the structural and schematics of voltage stabilizers and frequency of asynchronous generators with improved operational and technical specifications. Technical novelty of design solutions of the magnetic system and stabilizers asynchronous generator of electricity parameters confirmed by the patents for the invention of the Russian Federation. The proposed technical solution voltage stabilizer asynchronous generators, can reduce the weight of the block capacitors excitation and reactive power compensation, as well as to simplify the control system power circuit which has less power electronic devices. For wind power plants it is an important issue not only to stabilize the voltage of the generator, but also the frequency of the current. Recommend functionality stabilizer schemes parameters of electric power made for direct frequency converters with artificial and natural switching power electronic devices. It is also proposed as part of stabilization systems use single-phase voltage, three-phase transformers with rotating magnetic field, reduce the level of electromagnetic interference generated by power electronic devices for switching, enhance the efficiency and reliability of the stabilizer.

  9. Geomagnetism and Induced Voltage

    Science.gov (United States)

    Abdul-Razzaq, W.; Biller, R. D.

    2010-01-01

    Introductory physics laboratories have seen an influx of "conceptual integrated science" over time in their classrooms with elements of other sciences such as chemistry, biology, Earth science, and astronomy. We describe a laboratory to introduce this development, as it attracts attention to the voltage induced in the human brain as it…

  10. High-voltage picoamperemeter

    Energy Technology Data Exchange (ETDEWEB)

    Bugl, Andrea; Ball, Markus; Boehmer, Michael; Doerheim, Sverre; Hoenle, Andreas; Konorov, Igor [Technische Universitaet Muenchen, Garching (Germany); Ketzer, Bernhard [Technische Universitaet Muenchen, Garching (Germany); Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany)

    2014-07-01

    Current measurements in the nano- and picoampere region on high voltage are an important tool to understand charge transfer processes in micropattern gas detectors like the Gas Electron Multiplier (GEM). They are currently used to e.g. optimize the field configuration in a multi-GEM stack to be used in the ALICE TPC after the upgrade of the experiment during the 2nd long shutdown of the LHC. Devices which allow measurements down to 1pA at high voltage up to 6 kV have been developed at TU Muenchen. They are based on analog current measurements via the voltage drop over a switchable shunt. A microcontroller collects 128 digital ADC values and calculates their mean and standard deviation. This information is sent with a wireless transmitting unit to a computer and stored in a root file. A nearly unlimited number of devices can be operated simultaneously and read out by a single receiver. The results can also be displayed on a LCD directly at the device. Battery operation and the wireless readout are important to protect the user from any contact to high voltage. The principle of the device is explained, and systematic studies of their properties are shown.

  11. Hadron production near threshold

    Indian Academy of Sciences (India)

    B K Jain; N G Kelkar; K P Khmemchandani

    2006-04-01

    Final state interaction effects in → + and → 3He reactions are explored near threshold to study the sensitivity of the cross-sections to the potential and the scattering matrix. The final state scattering wave functions between and and and 3He are described rigorously. The production is described by the exchange of one pion and a -meson between two protons in the incident channel. The production is described by a two-step model, where in the first step a pion is produced. This pion then produces an by interacting with another nucleon.

  12. Advantages and limitations of transition voltage spectroscopy: A theoretical analysis

    NARCIS (Netherlands)

    Mirjani, F.; Thijssen, J.M.; Van der Molen, S.J.

    2011-01-01

    In molecular charge transport, transition voltage spectroscopy (TVS) holds the promise that molecular energy levels can be explored at bias voltages lower than required for resonant tunneling. We investigate the theoretical basis of this tool using a generic model. In particular, we study the length

  13. Dynamic range of low-voltage cascode current mirrors

    DEFF Research Database (Denmark)

    Bruun, Erik; Shah, Peter Jivan

    1995-01-01

    Low-voltage cascode current mirrors are reviewed with respect to the design limitations imposed if all transistors in the mirror are required to operate in the saturation region. It is found that both a lower limit and an upper limit exist for the cascode transistor bias voltage. Further, the use...

  14. Low voltage bandgap reference with closed loop curvature compensation

    Science.gov (United States)

    Tao, Fan; Bo, Du; Zheng, Zhang; Guoshun, Yuan

    2009-03-01

    A new low-voltage CMOS bandgap reference (BGR) that achieves high temperature stability is proposed. It feeds back the output voltage to the curvature compensation circuit that constitutes a closed loop circuit to cancel the logarithmic term of voltage VBE. Meanwhile a low voltage amplifier with the 0.5 μm low threshold technology is designed for the BGR. A high temperature stability BGR circuit is fabricated in the CSMC 0.5 μm CMOS technology. The measured result shows that the BGR can operate down to 1 V, while the temperature coefficient and line regulation are only 9 ppm/°C and 1.2 mV/V, respectively.

  15. Ultra-Low Voltage Class AB Switched Current Memory Cell

    DEFF Research Database (Denmark)

    Igor, Mucha

    1996-01-01

    This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process with thr......This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process...... with threshold voltages of 0.9V. Both hand calculations and PSPICE simulations showed that the cells designed allowed a maximum signal range better than +/-13 micoamp, with a supply voltage down to 1V and a quiescent bias current of 1 microamp, resulting in a very high current efficiency and effective power...

  16. Transient sodium current at subthreshold voltages: activation by EPSP waveforms.

    Science.gov (United States)

    Carter, Brett C; Giessel, Andrew J; Sabatini, Bernardo L; Bean, Bruce P

    2012-09-20

    Tetrodotoxin (TTX)-sensitive sodium channels carry large transient currents during action potentials and also "persistent" sodium current, a noninactivating TTX-sensitive current present at subthreshold voltages. We examined gating of subthreshold sodium current in dissociated cerebellar Purkinje neurons and hippocampal CA1 neurons, studied at 37°C with near-physiological ionic conditions. Unexpectedly, in both cell types small voltage steps at subthreshold voltages activated a substantial component of transient sodium current as well as persistent current. Subthreshold EPSP-like waveforms also activated a large component of transient sodium current, but IPSP-like waveforms engaged primarily persistent sodium current with only a small additional transient component. Activation of transient as well as persistent sodium current at subthreshold voltages produces amplification of EPSPs that is sensitive to the rate of depolarization and can help account for the dependence of spike threshold on depolarization rate, as previously observed in vivo.

  17. Low voltage bandgap reference with closed loop curvature compensation

    Institute of Scientific and Technical Information of China (English)

    Fan Tao; Du Bo; Zhang Zheng; Yuan Guoshun

    2009-01-01

    A new low-voltage CMOS bandgap reference (BGR) that achieves high temperature stability is proposed. It feeds back the output voltage to the curvature compensation circuit that constitutes a closed loop circuit to cancel the logarithmic term of voltage VBE. Meanwhile a low voltage amplifier with the 0.5μm low threshold technology is designed for the BGR. A high temperature stability BGR circuit is fabricated in the CSMC 0.5μm CMOS tech-nology. The measured result shows that the BGR can operate down to 1 V, while the temperature coefficient and line regulation are only 9 ppm/℃ and 1.2 mV/V, respectively.

  18. Breakdown voltage of discrete capacitors under single-pulse conditions

    Science.gov (United States)

    Domingos, H.; Scaturro, J.; Hayes, L.

    1981-01-01

    For electrostatic capacitors the breakdown voltage is inherently related to the properties of the dielectric, with the important parameters being the dielectric field strength which is related to the dielectric constant and the dielectric thickness. These are not necessarily related to the capacitance value and the rated voltage, but generally the larger values of capacitance have lower breakdown voltages. Foil and wet slug electrolytics can withstand conduction currents pulses without apparent damage (in either direction for foil types). For solid tantalums, damage occurs whenever the capacitor charges to the forming voltage.

  19. Breakdown voltage of metal-oxide resistors in liquid argon

    CERN Document Server

    Bagby, L F; James, C C; Jones, B J P; Jostlein, H; Lockwitz, S; Naples, D; Raaf, J L; Rameika, R; Schukraft, A; Strauss, T; Weber, M S; Wolbers, S A

    2014-01-01

    We characterized a sample of metal-oxide resistors and measured their breakdown voltage in liquid argon by applying high voltage (HV) pulses over a 3 second period to simulate the electric breakdown in a HV-divider chain. All resistors had higher breakdown voltages in liquid argon than their vendor ratings in air at room temperature. Failure modes range from full destruction to coating damage. In cases where breakdown was not catastrophic, subsequent breakdown voltages were lower in subsequent measuring runs. One resistor type withstands 131\\,kV pulses, the limit of the test setup.

  20. Deployment of low-voltage regulator considering existing voltage control in medium-voltage distribution systems

    Directory of Open Access Journals (Sweden)

    Hiroshi Kikusato

    2016-01-01

    Full Text Available Many photovoltaic (PV systems have been installed in distribution systems. This installation complicates the maintenance of all voltages within the appropriate range in all low-voltage distribution systems (LVDSs because the trends in voltage fluctuation differ in each LVDS. The installation of a low-voltage regulator (LVR that can accordingly control the voltage in each LVDS has been studied as a solution to this problem. Voltage control in a medium-voltage distribution system must be considered to study the deployment of LVRs. In this study, we installed LVRs in the LVDSs in which the existing voltage-control scheme cannot prevent voltage deviation and performed a numerical simulation by using a distribution system model with PV to evaluate the deployment of the LVRs.

  1. Driving voltage properties sensitive to microscale liquid crystal orientation pattern in twisted nematic liquid crystal cells

    Science.gov (United States)

    Honma, Michinori; Takahashi, Koki; Yamaguchi, Rumiko; Nose, Toshiaki

    2016-04-01

    We investigated the micropattern-sensitive driving voltage properties of twisted nematic liquid crystal (LC) cells and found that the threshold voltage for inducing the Fréedericksz transition strongly depends on the micropatterned LC molecular orientation state. We discuss the effects of various cell parameters such as the period of the micropattern Λ, the LC layer thickness d, and the twist angle Φ on the threshold voltage. By a computer simulation of the LC molecular orientation, we found that the threshold voltage V th varies in response to the deformation factor Δ (= d 2/Λ2 + Φ2/π2) of the spatially distributed LC molecular orientation. We confirm that V\\text{th}2 is proportional to 1 - Δ from both theoretical and experimental standpoints.

  2. Analyzing of Dynamic Voltage Restorer in Series Compensation Voltage

    Directory of Open Access Journals (Sweden)

    Naser Parhizgar

    2012-02-01

    Full Text Available The Dynamic Voltage Restorer (DVR is a series-connected compensator to generate a controllable voltage to against the short-term voltage disturbances. The technique of DVR is an effective and cost competitive approach to improve voltage quality at the load side. This study presents a single-phase and threephase DVR system with reduced switch-count topology to protect the sensitive load against abnormal voltage conditions. Most basic function, the DVR configuration consist of a two level Voltage Source Converter (VSC, a dc energy storage device, a coupling transformer Connected in shunt with the ac system This study presents the application of Dynamic Voltage Restorer (DVR on power distribution systems for mitigation of voltage sag at critical loads. DVR is one of the compensating types of custom power devices. The DVR, which is based on forced-commutated Voltage Source Converter (VSC has been proved suitable for the task of compensating voltage sags/swells. Simulation results are presented to illustrate and understand the performances of DVR in supporting load voltages under voltage sags/swells conditions.

  3. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.

    2014-10-09

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  4. Increased voltage photovoltaic cell

    Science.gov (United States)

    Ross, B.; Bickler, D. B.; Gallagher, B. D. (Inventor)

    1985-01-01

    A photovoltaic cell, such as a solar cell, is provided which has a higher output voltage than prior cells. The improved cell includes a substrate of doped silicon, a first layer of silicon disposed on the substrate and having opposite doping, and a second layer of silicon carbide disposed on the first layer. The silicon carbide preferably has the same type of doping as the first layer.

  5. High Voltage Seismic Generator

    Science.gov (United States)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  6. Scanning transmission electron microscopy imaging dynamics at low accelerating voltages

    Energy Technology Data Exchange (ETDEWEB)

    Lugg, N.R. [School of Physics, University of Melbourne, Parkville, Victoria 3010 (Australia); Findlay, S.D. [Institute of Engineering Innovation, The University of Tokyo, Tokyo 116-0013 (Japan); Shibata, N. [Institute of Engineering Innovation, The University of Tokyo, Tokyo 116-0013 (Japan); PRESTO, Japan Science and Technology Agency, Saitama 332-0012 (Japan); Mizoguchi, T. [Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505 (Japan); D' Alfonso, A.J. [School of Physics, University of Melbourne, Parkville, Victoria 3010 (Australia); Allen, L.J., E-mail: lja@unimelb.edu.au [School of Physics, University of Melbourne, Parkville, Victoria 3010 (Australia); Ikuhara, Y. [Institute of Engineering Innovation, The University of Tokyo, Tokyo 116-0013 (Japan); Nanostructures Research Laboratory, Japan Fine Ceramic Center, Nagoya 456-8587 (Japan); WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)

    2011-07-15

    Motivated by the desire to minimize specimen damage in beam sensitive specimens, there has been a recent push toward using relatively low accelerating voltages (<100kV) in scanning transmission electron microscopy. To complement experimental efforts on this front, this paper seeks to explore the variations with accelerating voltage of the imaging dynamics, both of the channelling of the fast electron and of the inelastic interactions. High-angle annular-dark field, electron energy loss spectroscopic imaging and annular bright field imaging are all considered. -- Highlights: {yields} Both elastic and inelastic scattering in STEM are acceleration voltage dependent. {yields} HAADF, EELS and ABF imaging are assessed with a view to optimum imaging. {yields} Lower accelerating voltages improve STEM EELS contrast in very thin crystals. {yields} Higher accelerating voltages give better STEM EELS contrast in thicker crystals. {yields} At fixed resolution, higher accelerating voltage aids ABF imaging of light elements.

  7. Planar LTCC transformers for high voltage flyback converters.

    Energy Technology Data Exchange (ETDEWEB)

    Schofield, Daryl (NASCENT Technology Inc. , Watertown, SD); Schare, Joshua M.; Glass, Sarah Jill; Roesler, Alexander William; Ewsuk, Kevin Gregory; Slama, George (NASCENT Technology Inc. , Watertown, SD); Abel, Dave (NASCENT Technology Inc. , Watertown, SD)

    2007-06-01

    This paper discusses the design and use of low-temperature (850 C to 950 C) co-fired ceramic (LTCC) planar magnetic flyback transformers for applications that require conversion of a low voltage to high voltage (> 100V) with significant volumetric constraints. Measured performance and modeling results for multiple designs showed that the LTCC flyback transformer design and construction imposes serious limitations on the achievable coupling and significantly impacts the transformer performance and output voltage. This paper discusses the impact of various design factors that can provide improved performance by increasing transformer coupling and output voltage. The experiments performed on prototype units demonstrated LTCC transformer designs capable of greater than 2 kV output. Finally, the work investigated the effect of the LTCC microstructure on transformer insulation. Although this paper focuses on generating voltages in the kV range, the experimental characterization and discussion presented in this work applies to designs requiring lower voltage.

  8. $\\eta'$ photoproduction near threshold

    CERN Document Server

    Zhao, Q

    2000-01-01

    In this work, the $\\eta^\\prime$ meson photoproduction near threshold is studied in the quark model framework. A pseudovector effective Lagrangian is introduced for the $\\eta^\\prime NN$ coupling and the newly published data from the SAPHIR Collaboration provide good constraints to this parameter. Corrections of order $O(1/m_q^2)$ for the electromagnetic interaction vertex are taken into account, which produce corrections of order $O(1/m_q^3)$ to the transition amplitude for $\\gamma p\\to \\eta^\\prime p$. Some low-lying resonances, $S_{11}(1535)$, $P_{13}(1720)$, and $P_{13}(1900)$ are found to have significant contributions. A bump structure around $E_\\gamma\\approx$ 2 GeV is found arising from the $n=3$ terms in the harmonic oscillator basis. The beam polarization asymmetries are predicted and can be tested against the forthcoming data from GRAAL.

  9. Mitigation of Voltage Sags in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar;

    2013-01-01

    problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate voltage sags in the CIGRE Low Voltage (LV) test network and networks like this. The voltage sags, for the tested cases in the CIGRE LV test network are mainly due to three phase faults....... The compensation of voltage sags in the different parts of CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0....

  10. Voltage Controlled Dynamic Demand Response

    DEFF Research Database (Denmark)

    Bhattarai, Bishnu Prasad; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    . An adaptive dynamic model has been developed to determine composite voltage dependency of an aggregated load on feeder level. Following the demand dispatch or control signal, optimum voltage setting at the LV substation is determined based on the voltage dependency of the load. Furthermore, a new technique...

  11. Charge-pump voltage converter

    Science.gov (United States)

    Brainard, John P.; Christenson, Todd R.

    2009-11-03

    A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

  12. Room Temperature Ultralow Threshold GaN Nanowire Polariton Laser

    KAUST Repository

    Das, Ayan

    2011-08-01

    We report ultralow threshold polariton lasing from a single GaN nanowire strongly coupled to a large-area dielectric microcavity. The threshold carrier density is 3 orders of magnitude lower than that of photon lasing observed in the same device, and 2 orders of magnitude lower than any existing room-temperature polariton devices. Spectral, polarization, and coherence properties of the emission were measured to confirm polariton lasing. © 2011 American Physical Society.

  13. Transient voltage sharing in series-coupled high voltage switches

    Directory of Open Access Journals (Sweden)

    Editorial Office

    1992-07-01

    Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

  14. Optimising threshold levels for information transmission in binary threshold networks: Independent multiplicative noise on each threshold

    Science.gov (United States)

    Zhou, Bingchang; McDonnell, Mark D.

    2015-02-01

    The problem of optimising the threshold levels in multilevel threshold system subject to multiplicative Gaussian and uniform noise is considered. Similar to previous results for additive noise, we find a bifurcation phenomenon in the optimal threshold values, as the noise intensity changes. This occurs when the number of threshold units is greater than one. We also study the optimal thresholds for combined additive and multiplicative Gaussian noise, and find that all threshold levels need to be identical to optimise the system when the additive noise intensity is a constant. However, this identical value is not equal to the signal mean, unlike the case of additive noise. When the multiplicative noise intensity is instead held constant, the optimal threshold levels are not all identical for small additive noise intensity but are all equal to zero for large additive noise intensity. The model and our results are potentially relevant for sensor network design and understanding neurobiological sensory neurons such as in the peripheral auditory system.

  15. CT x-ray tube voltage optimisation and image reconstruction evaluation using visual grading analysis

    Science.gov (United States)

    Zheng, Xiaoming; Kim, Ted M.; Davidson, Rob; Lee, Seongju; Shin, Cheongil; Yang, Sook

    2014-03-01

    The purposes of this work were to find an optimal x-ray voltage for CT imaging and to determine the diagnostic effectiveness of image reconstruction techniques by using the visual grading analysis (VGA). Images of the PH-5 CT abdomen phantom (Kagaku Co, Kyoto) were acquired by the Toshiba Aquillion One 320 slices CT system with various exposures (from 10 to 580 mAs) under different tube peak voltages (80, 100 and 120 kVp). The images were reconstructed by employing the FBP and the AIDR 3D iterative reconstructions with Mild, Standard and Strong FBP blending. Image quality was assessed by measuring noise, contrast to noise ratio and human observer's VGA scores. The CT dose index CTDIv was obtained from the values displayed on the images. The best fit for the curves of the image quality VGA vs dose CTDIv is a logistic function from the SPSS estimation. A threshold dose Dt is defined as the CTDIv at the just acceptable for diagnostic image quality and a figure of merit (FOM) is defined as the slope of the standardised logistic function. The Dt and FOM were found to be 5.4, 8.1 and 9.1 mGy and 0.47, 0.51 and 0.38 under the tube voltages of 80, 100 and 120 kVp, respectively, from images reconstructed by the FBP technique. The Dt and FOM values were lower from the images reconstructed by the AIDR 3D in comparison with the FBP technique. The optimal xray peak voltage for the imaging of the PH-5 abdomen phantom by the Aquillion One CT system was found to be at 100 kVp. The images reconstructed by the FBP are more diagnostically effective than that by the AIDR 3D but with a higher dose Dt to the patients.

  16. No-Voltage Meter

    Science.gov (United States)

    1976-02-01

    VW- IKft, 1/4 H4 -Wv- IK!1, I/4W INTERNAL VOLTAGE NOTE ALL TRANSISTORS ARE 2N43A OR EQUIVALENT GERMANIUM ALLOY PNP AA ALKALINE BATTERY...D-,, regardless of polarity. This signal is then full-wave rectified by the diode-connected Germanium transistor bridge, T,, T-,, T3, and T4... Transistor T5 acts as a second current limiter. Resistor R2 was selected to give 90 f# of full-scale meter deflection with an input signal of 115 volts

  17. Benchmarking of Voltage Sag Generators

    DEFF Research Database (Denmark)

    Yang, Yongheng; Blaabjerg, Frede; Zou, Zhixiang

    2012-01-01

    The increased penetration of renewable energy systems, like photovoltaic and wind power systems, rises the concern about the power quality and stability of the utility grid. Some regulations for Low Voltage Ride-Through (LVRT) for medium voltage or high voltage applications, are coming into force...... to guide these grid-connected distributed power generation systems. In order to verify the response of such systems for voltage disturbance, mainly for evaluation of voltage sags/dips, a Voltage Sag Generator (VSG) is needed. This paper evaluates such sag test devices according to IEC 61000 in order...... to provide cheaper solutions to test against voltage sags. Simulation and experimental results demonstrate that the shunt impedance based VSG solution is the easiest and cheapest one for laboratory test applications. The back-to-back fully controlled converter based VSG is the most flexible solution...

  18. MD 751: Train Instability Threshold

    CERN Document Server

    Carver, Lee Robert; Metral, Elias; Salvant, Benoit; Levens, Tom; Nisbet, David; Zobov, M; CERN. Geneva. ATS Department

    2016-01-01

    The purpose of this MD is to measure the octupole current thresholds for stability for a single bunch, and then make an immediate comparison (with the same operational settings) for a train of 72 bunches separated by 25ns. From theory, the expected thresholds should be similar. Any discrepancy between the two cases will be of great interest as it could indicate the presence of additional mechanisms that contribute to the instability threshold, for example electron cloud.

  19. Albania - Thresholds I and II

    Data.gov (United States)

    Millennium Challenge Corporation — From 2006 to 2011, the government of Albania (GOA) received two Millennium Challenge Corporation (MCC) Threshold Programs totaling $29.6 million. Albania received...

  20. Fast Quasi-Threshold Editing

    CERN Document Server

    Brandes, Ulrik; Strasser, Ben; Wagner, Dorothea

    2015-01-01

    We introduce Quasi-Threshold Mover (QTM), an algorithm to solve the quasi-threshold (also called trivially perfect) graph editing problem with edge insertion and deletion. Given a graph it computes a quasi-threshold graph which is close in terms of edit count. This edit problem is NP-hard. We present an extensive experimental study, in which we show that QTM is the first algorithm that is able to scale to large real-world graphs in practice. As a side result we further present a simple linear-time algorithm for the quasi-threshold recognition problem.

  1. Electrically controllable liquid crystal random lasers below the Fréedericksz transition threshold.

    Science.gov (United States)

    Lee, Chia-Rong; Lin, Jia-De; Huang, Bo-Yuang; Lin, Shih-Hung; Mo, Ting-Shan; Huang, Shuan-Yu; Kuo, Chie-Tong; Yeh, Hui-Chen

    2011-01-31

    This investigation elucidates for the first time electrically controllable random lasers below the threshold voltage in dye-doped liquid crystal (DDLC) cells with and without adding an azo-dye. Experimental results show that the lasing intensities and the energy thresholds of the random lasers can be decreased and increased, respectively, by increasing the applied voltage below the Fréedericksz transition threshold. The below-threshold-electric-controllability of the random lasers is attributable to the effective decrease of the spatial fluctuation of the orientational order and thus of the dielectric tensor of LCs by increasing the electric-field-aligned order of LCs below the threshold, thereby increasing the diffusion constant and decreasing the scattering strength of the fluorescence photons in their recurrent multiple scattering. This can result in the decrease in the lasing intensity of the random lasers and the increase in their energy thresholds. Furthermore, the addition of an azo-dye in DDLC cell can induce the range of the working voltage below the threshold for the control of the random laser to reduce.

  2. Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

    Energy Technology Data Exchange (ETDEWEB)

    Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel; Sebastian, Abu [IBM Research-Zurich, 8803 Rüschlikon (Switzerland)

    2016-01-14

    In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current in doped Ge{sub 2}Sb{sub 2}Te{sub 5} nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters.

  3. Coordinated Voltage Control of Distributed PV Inverters for Voltage Regulation in Low Voltage Distribution Networks

    DEFF Research Database (Denmark)

    Nainar, Karthikeyan; Pokhrel, Basanta Raj; Pillai, Jayakrishnan Radhakrishna

    2017-01-01

    This paper reviews and analyzes the existing voltage control methods of distributed solar PV inverters to improve the voltage regulation and thereby the hosting capacity of a low-voltage distribution network. A novel coordinated voltage control method is proposed based on voltage sensitivity...... analysis, which is simple for computation and requires moderate automation and communication infrastructure. The proposed method is suitable for a hierarchical control structure where a supervisory controller has the provision to adapt the settings of local PV inverter controllers for overall system...

  4. Heat-pump performance: voltage dip/sag, under-voltage and over-voltage

    Directory of Open Access Journals (Sweden)

    William J.B. Heffernan

    2014-12-01

    Full Text Available Reverse cycle air-source heat-pumps are an increasingly significant load in New Zealand and in many other countries. This has raised concern over the impact wide-spread use of heat-pumps may have on the grid. The characteristics of the loads connected to the power system are changing because of heat-pumps. Their performance during under-voltage events such as voltage dips has the potential to compound the event and possibly cause voltage collapse. In this study, results from testing six heat-pumps are presented to assess their performance at various voltages and hence their impact on voltage stability.

  5. Voltage Swells Improvement in Low Voltage Network Using Dynamic Voltage Restorer

    Directory of Open Access Journals (Sweden)

    R. Omar

    2011-01-01

    Full Text Available Problem statement: Voltage disturbances are the most common power quality problem due to the increased use of a large numbers of sophisticated electronic equipment in industrial distribution system. The voltage disturbances such as voltage sags, swells, harmonics, unbalance and flickers. High quality in the power supply is needed, since failures due to such disturbances usually have a high impact on production cost. There are many different solutions to compensate voltage disturbances but the use of a DVR is considered to be the most cost effective method. The objective of this study is to propose a new topology of a DVR in order to mitigate voltage swells using a powerful power custom device namely the Dynamic Voltage Restorer (DVR. Approach: New configuration of a DVR with an improvement of a controller based on direct-quadrature-zero method has been introduced to compensate voltage swells in the network. Results: The effectiveness of the DVR with its controller were verify using Matlab/Simulinks SimPower Toolbox and then implemented using 5KVA DVR experimental setup. Simulations and experimental results demonstrate the effective dynamic performance of the proposed configuration. Conclusion: The implimentation of the proposed DVR validate the capabilities in mitigating of voltage swells effectiveness.During voltage swells, the DVR injects an appropriate voltage to maintain the load voltage at its nominal value.

  6. Influence of vowel selection on determination of phonation threshold pressure.

    Science.gov (United States)

    Plexico, Laura W; Sandage, Mary J

    2012-09-01

    Phonation threshold pressure values reported in the literature have largely been determined with use of one of three consonant-vowel sequences, /pi/, /pae/, and /pa/; however, it is not currently known if vowel choice influences phonation threshold pressure values. Based on the evidence that describes velopharyngeal closure variations between vowels, this research effort hypothesized that phonation threshold pressure values measured from the consonant-vowel sequence /pi/ would be significantly lower than the /pae/ and /pa/ sequences. Twelve female participants aged between 20 and 27 years produced five-syllable trains of /pi/, /pae/, and /pa/ at low, modal, and high pitches. A within-subject repeated measures approach was conducted to compare phonation threshold pressure value differences between the three consonant-vowel sequences for three different pitches while controlling for other task elicitation variables that may also influence phonation threshold pressure values. Repeated measures analysis of the data indicated that there was no significant difference (Pvowel sequences at any frequency assessed. Further, for all three consonant-vowel sequences measured, significant differences of phonation threshold pressure magnitude were observed when comparing the high frequency versus the low and modal frequencies, a finding consistent with previous publications. The vowel selected for task elicitation for phonation threshold pressure determination does not appear to significantly affect phonation threshold values, indicating flexibility of the vowel aspect of this measure for clinical use of phonation threshold pressure. Copyright © 2012 The Voice Foundation. Published by Mosby, Inc. All rights reserved.

  7. Effect of threshold quantization in opportunistic splitting algorithm

    KAUST Repository

    Nam, Haewoon

    2011-12-01

    This paper discusses algorithms to find the optimal threshold and also investigates the impact of threshold quantization on the scheduling outage performance of the opportunistic splitting scheduling algorithm. Since this algorithm aims at finding the user with the highest channel quality within the minimal number of mini-slots by adjusting the threshold every mini-slot, optimizing the threshold is of paramount importance. Hence, in this paper we first discuss how to compute the optimal threshold along with two tight approximations for the optimal threshold. Closed-form expressions are provided for those approximations for simple calculations. Then, we consider linear quantization of the threshold to take the limited number of bits for signaling messages in practical systems into consideration. Due to the limited granularity for the quantized threshold value, an irreducible scheduling outage floor is observed. The numerical results show that the two approximations offer lower scheduling outage probability floors compared to the conventional algorithm when the threshold is quantized. © 2006 IEEE.

  8. Ecohydrology on the Threshold?

    Science.gov (United States)

    Wainwright, John

    2013-04-01

    This presentation suggests that there are three major limitations to the development of ecohydrology as a coherent disciplinary area. One of the principal controls and feedbacks on patterns of plants and water in the environment is the form of the landscape and landscape-forming processes. Yet (eco)geomorphology is typically overlooked as a topic for ecohydrological investigation. Thus, the process domains used to explain patterns is typically overly restricted. As surface change controls the connectivity of other process, this restriction is significant. However, even when surface change is incorporated, there is often an emphasis on subdisciplinary areas, so that the investigation of patterns across process domains is not carried out in a holistic way. For example, studies of the feedbacks of vegetation on flow resistance are carried out significantly differently when considering wind and water flows (and indeed differently for water flows on hillslopes compared to in channels). Human action is the most important global control on ecohydrology, either from a top-down perspective through climate change, or from a bottom-up perspective through land use and land-use change. The actions of people on ecohydrological and ecogeomorphic processes, though, are typically considered in a static way. Techniques of agent-based modelling are being developed to overcome this limitation, but there need to be parallel developments in field techniques to address the data requirements and empirical underpinnings of such approaches. I argue that to cross the threshold into becoming a more mature discipline ecohydrology/ecogeomorphology needs to take on board the limitations of representations of process, pattern and people. Using examples from studies of land degradation in drylands, as well as from more temperate settings, I will suggest how progress may start to be made.

  9. Isomerically Pure Tetramethylrhodamine Voltage Reporters.

    Science.gov (United States)

    Deal, Parker E; Kulkarni, Rishikesh U; Al-Abdullatif, Sarah H; Miller, Evan W

    2016-07-27

    We present the design, synthesis, and application of a new family of fluorescent voltage indicators based on isomerically pure tetramethylrhodamines. These new Rhodamine Voltage Reporters, or RhoVRs, use photoinduced electron transfer (PeT) as a trigger for voltage sensing, display excitation and emission profiles in the green to orange region of the visible spectrum, demonstrate high sensitivity to membrane potential changes (up to 47% ΔF/F per 100 mV), and employ a tertiary amide derived from sarcosine, which aids in membrane localization and simultaneously simplifies the synthetic route to the voltage sensors. The most sensitive of the RhoVR dyes, RhoVR 1, features a methoxy-substituted diethylaniline donor and phenylenevinylene molecular wire at the 5'-position of the rhodamine aryl ring, exhibits the highest voltage sensitivity to date for red-shifted PeT-based voltage sensors, and is compatible with simultaneous imaging alongside green fluorescent protein-based indicators. The discoveries that sarcosine-based tertiary amides in the context of molecular-wire voltage indicators prevent dye internalization and 5'-substituted voltage indicators exhibit improved voltage sensitivity should be broadly applicable to other types of PeT-based voltage-sensitive fluorophores.

  10. Second threshold in weak interactions

    NARCIS (Netherlands)

    Veltman, M.J.G.

    1977-01-01

    The point of view that weak interactions must have a second threshold below 300 – 600 GeV is developed. Above this threshold new physics must come in. This new physics may be the Higgs system, or some other nonperturbative system possibly having some similarities to the Higgs system. The limit of la

  11. Threshold Concepts and Information Literacy

    Science.gov (United States)

    Townsend, Lori; Brunetti, Korey; Hofer, Amy R.

    2011-01-01

    What do we teach when we teach information literacy in higher education? This paper describes a pedagogical approach to information literacy that helps instructors focus content around transformative learning thresholds. The threshold concept framework holds promise for librarians because it grounds the instructor in the big ideas and underlying…

  12. Threshold Concepts and Information Literacy

    Science.gov (United States)

    Townsend, Lori; Brunetti, Korey; Hofer, Amy R.

    2011-01-01

    What do we teach when we teach information literacy in higher education? This paper describes a pedagogical approach to information literacy that helps instructors focus content around transformative learning thresholds. The threshold concept framework holds promise for librarians because it grounds the instructor in the big ideas and underlying…

  13. A high voltage ratio and low ripple interleaved DC-DC converter for fuel cell applications.

    Science.gov (United States)

    Chang, Long-Yi; Chao, Kuei-Hsiang; Chang, Tsang-Chih

    2012-01-01

    This paper proposes a high voltage ratio and low ripple interleaved boost DC-DC converter, which can be used to reduce the output voltage ripple. This converter transfers the low DC voltage of fuel cell to high DC voltage in DC link. The structure of the converter is parallel with two voltage-doubler boost converters by interleaving their output voltages to reduce the voltage ripple ratio. Besides, it can lower the current stress for the switches and inductors in the system. First, the PSIM software was used to establish a proton exchange membrane fuel cell and a converter circuit model. The simulated and measured results of the fuel cell output characteristic curve are made to verify the correctness of the established simulation model. In addition, some experimental results are made to validate the effectiveness in improving output voltage ripple of the proposed high voltage ratio interleaved boost DC-DC converters.

  14. Oscillatory Threshold Logic

    OpenAIRE

    Jon Borresen; Stephen Lynch

    2012-01-01

    In the 1940s, the first generation of modern computers used vacuum tube oscillators as their principle components, however, with the development of the transistor, such oscillator based computers quickly became obsolete. As the demand for faster and lower power computers continues, transistors are themselves approaching their theoretical limit and emerging technologies must eventually supersede them. With the development of optical oscillators and Josephson junction technology, we are again p...

  15. Optimal Dynamic Sub-Threshold Technique for Extreme Low Power Consumption for VLSI

    Science.gov (United States)

    Duong, Tuan A.

    2012-01-01

    For miniaturization of electronics systems, power consumption plays a key role in the realm of constraints. Considering the very large scale integration (VLSI) design aspect, as transistor feature size is decreased to 50 nm and below, there is sizable increase in the number of transistors as more functional building blocks are embedded in the same chip. However, the consequent increase in power consumption (dynamic and leakage) will serve as a key constraint to inhibit the advantages of transistor feature size reduction. Power consumption can be reduced by minimizing the voltage supply (for dynamic power consumption) and/or increasing threshold voltage (V(sub th), for reducing leakage power). When the feature size of the transistor is reduced, supply voltage (V(sub dd)) and threshold voltage (V(sub th)) are also reduced accordingly; then, the leakage current becomes a bigger factor of the total power consumption. To maintain low power consumption, operation of electronics at sub-threshold levels can be a potentially strong contender; however, there are two obstacles to be faced: more leakage current per transistor will cause more leakage power consumption, and slow response time when the transistor is operated in weak inversion region. To enable low power consumption and yet obtain high performance, the CMOS (complementary metal oxide semiconductor) transistor as a basic element is viewed and controlled as a four-terminal device: source, drain, gate, and body, as differentiated from the traditional approach with three terminals: i.e., source and body, drain, and gate. This technique features multiple voltage sources to supply the dynamic control, and uses dynamic control to enable low-threshold voltage when the channel (N or P) is active, for speed response enhancement and high threshold voltage, and when the transistor channel (N or P) is inactive, to reduce the leakage current for low-leakage power consumption.

  16. Stray voltage zapping cows, pigs in Quebec

    Energy Technology Data Exchange (ETDEWEB)

    1988-05-18

    A power-supply malfunction is giving farm animals in Quebec a shock every time they eat or drink from metal troughs, making them nervous, lowering production, and stunting growth. In 2 years of negotiation with Hydro-Quebec, the utility has refused to correct the problem known as stray voltage. The shocks measure about 10 volts. It has been estimated the average Quebec dairy farmer with 40 cows is losing $15,000 to $20,000/y in reduced milk production. About 4,000 of the 23,000 Quebec pig and dairy farms are bothered by stray voltage. Hydro-Quebec has been asked to install filters that would reduce the problem; however, Hydro-Quebec attributes the stray voltage to the farmers' own equipment. A study conducted by the provincial Agriculture Department that measured stray voltage on 700 farms showed that 70% of the problem was Hydro-Quebec equipment. Farmers are prepared to solve the remaining 30% themselves.

  17. Regulation of granule cell excitability by a low-threshold calcium spike in turtle olfactory bulb

    DEFF Research Database (Denmark)

    Pinato, Giulietta; Midtgaard, Jens

    2003-01-01

    Granule cells excitability in the turtle olfactory bulb was analyzed using whole cell recordings in current- and voltage-clamp mode. Low-threshold spikes (LTSs) were evoked at potentials that are subthreshold for Na spikes in normal medium. The LTSs were evoked from rest, but hyperpolarization...... of the cell usually increased their amplitude so that they more easily boosted Na spike initiation. The LTS persisted in the presence of TTX but was antagonized by blockers of T-type calcium channels. The voltage dependence, kinetics, and inactivation properties of the LTS were characteristic of a low......-threshold calcium spike. The threshold of the LTS was slightly above the resting potential but well below the Na spike threshold, and the LTS was often evoked in isolation in normal medium. Tetraethylammonium (TEA) and 4-aminopyridine (4-AP) had only minimal effects on the LTS but revealed the presence of a high...

  18. Multiple High Voltage Pulse Stressing of Polymer Thick Film Resistors

    Directory of Open Access Journals (Sweden)

    Busi Rambabu

    2014-01-01

    Full Text Available The purpose of this paper is to study high voltage interactions in polymer thick film resistors, namely, polyvinyl chloride- (PVC- graphite thick film resistors, and their applications in universal trimming of these resistors. High voltages in the form of impulses for various pulse durations and with different amplitudes have been applied to polymer thick film resistors and we observed the variation of resistance of these resistors with high voltages. It has been found that the resistance of polymer thick film resistors decreases in the case of higher resistivity materials and the resistance of polymer thick film resistor increases in the case of lower resistivity materials when high voltage impulses are applied to them. It has been also found that multiple high voltage pulse (MHVP stressing can be used to trim the polymer thick film resistors either upwards or downwards.

  19. Breakdown voltage of metal-oxide resistors in liquid argon

    Energy Technology Data Exchange (ETDEWEB)

    Bagby, L. F. [Fermilab; Gollapinni, S. [Kansas State U.; James, C. C. [Fermilab; Jones, B. J.P. [MIT; Jostlein, H. [Fermilab; Lockwitz, S. [Fermilab; Naples, D. [Pittsburgh U.; Raaf, J. L. [Fermilab; Rameika, R. [Fermilab; Schukraft, A. [Fermilab; Strauss, T. [Bern U., LHEP; Weber, M. S. [Bern U., LHEP; Wolbers, S. A. [Fermilab

    2014-11-07

    We characterized a sample of metal-oxide resistors and measured their breakdown voltage in liquid argon by applying high voltage (HV) pulses over a 3 second period. This test mimics the situation in a HV-divider chain when a breakdown occurs and the voltage across resistors rapidly rise from the static value to much higher values. All resistors had higher breakdown voltages in liquid argon than their vendor ratings in air at room temperature. Failure modes range from full destruction to coating damage. In cases where breakdown was not catastrophic, subsequent breakdown voltages were lower in subsequent measuring runs. One resistor type withstands 131 kV pulses, the limit of the test setup.

  20. Excitation Thresholds for Nonlinear Localized Modes on Lattices

    CERN Document Server

    Weinstein, M I

    1999-01-01

    Breathers are spatially localized and time periodic solutions of extended Hamiltonian dynamical systems. In this paper we study excitation thresholds for (nonlinearly dynamically stable) ground state breather or standing wave solutions for networks of coupled nonlinear oscillators and wave equations of nonlinear Schrödinger (NLS) type. Excitation thresholds are rigorously characterized by variational methods. The excitation threshold is related to the optimal (best) constant in a class of discr ete interpolation inequalities related to the Hamiltonian energy. We establish a precise connection among $d$, the dimensionality of the lattice, $2\\sigma+1$, the degree of the nonlinearity and the existence of an excitation threshold for discrete nonlinear Schrödinger systems (DNLS). We prove that if $\\sigma\\ge 2/d$, then ground state standing waves exist if and only if the total power is larger than some strictly positive threshold, the context of DNLS. We also discuss upper and lower bounds for excitation threshol...

  1. Apparatus for Controlling Low Power Voltages in Space Based Processing Systems

    Science.gov (United States)

    Petrick, David J. (Inventor)

    2017-01-01

    A low power voltage control circuit for use in space missions includes a switching device coupled between an input voltage and an output voltage. The switching device includes a control input coupled to an enable signal, wherein the control input is configured to selectively turn the output voltage on or off based at least in part on the enable signal. A current monitoring circuit is coupled to the output voltage and configured to produce a trip signal, wherein the trip signal is active when a load current flowing through the switching device is determined to exceed a predetermined threshold and is inactive otherwise. The power voltage control circuit is constructed of space qualified components.

  2. Voltage Dependence of Supercapacitor Capacitance

    Directory of Open Access Journals (Sweden)

    Szewczyk Arkadiusz

    2016-09-01

    Full Text Available Electronic Double-Layer Capacitors (EDLC, called Supercapacitors (SC, are electronic devices that are capable to store a relatively high amount of energy in a small volume comparing to other types of capacitors. They are composed of an activated carbon layer and electrolyte solution. The charge is stored on electrodes, forming the Helmholtz layer, and in electrolyte. The capacitance of supercapacitor is voltage- dependent. We propose an experimental method, based on monitoring of charging and discharging a supercapacitor, which enables to evaluate the charge in an SC structure as well as the Capacitance-Voltage (C-V dependence. The measurement setup, method and experimental results of charging/discharging commercially available supercapacitors in various voltage and current conditions are presented. The total charge stored in an SC structure is proportional to the square of voltage at SC electrodes while the charge on electrodes increases linearly with the voltage on SC electrodes. The Helmholtz capacitance increases linearly with the voltage bias while a sublinear increase of total capacitance was found. The voltage on SC increases after the discharge of electrodes due to diffusion of charges from the electrolyte to the electrodes. We have found that the recovery voltage value is linearly proportional to the initial bias voltage value.

  3. Phosphoinositide 5- and 3-phosphatase activities of a voltage-sensing phosphatase in living cells show identical voltage dependence.

    Science.gov (United States)

    Keum, Dongil; Kruse, Martin; Kim, Dong-Il; Hille, Bertil; Suh, Byung-Chang

    2016-06-28

    Voltage-sensing phosphatases (VSPs) are homologs of phosphatase and tensin homolog (PTEN), a phosphatidylinositol 3,4-bisphosphate [PI(3,4)P2] and phosphatidylinositol 3,4,5-trisphosphate [PI(3,4,5)P3] 3-phosphatase. However, VSPs have a wider range of substrates, cleaving 3-phosphate from PI(3,4)P2 and probably PI(3,4,5)P3 as well as 5-phosphate from phosphatidylinositol 4,5-bisphosphate [PI(4,5)P2] and PI(3,4,5)P3 in response to membrane depolarization. Recent proposals say these reactions have differing voltage dependence. Using Förster resonance energy transfer probes specific for different PIs in living cells with zebrafish VSP, we quantitate both voltage-dependent 5- and 3-phosphatase subreactions against endogenous substrates. These activities become apparent with different voltage thresholds, voltage sensitivities, and catalytic rates. As an analytical tool, we refine a kinetic model that includes the endogenous pools of phosphoinositides, endogenous phosphatase and kinase reactions connecting them, and four exogenous voltage-dependent 5- and 3-phosphatase subreactions of VSP. We show that apparent voltage threshold differences for seeing effects of the 5- and 3-phosphatase activities in cells are not due to different intrinsic voltage dependence of these reactions. Rather, the reactions have a common voltage dependence, and apparent differences arise only because each VSP subreaction has a different absolute catalytic rate that begins to surpass the respective endogenous enzyme activities at different voltages. For zebrafish VSP, our modeling revealed that 3-phosphatase activity against PI(3,4,5)P3 is 55-fold slower than 5-phosphatase activity against PI(4,5)P2; thus, PI(4,5)P2 generated more slowly from dephosphorylating PI(3,4,5)P3 might never accumulate. When 5-phosphatase activity was counteracted by coexpression of a phosphatidylinositol 4-phosphate 5-kinase, there was accumulation of PI(4,5)P2 in parallel to PI(3,4,5)P3 dephosphorylation

  4. Grid Filter Design for a Multi-Megawatt Medium-Voltage Voltage Source Inverter

    DEFF Research Database (Denmark)

    Rockhill, A.A.; Liserre, Marco; Teodorescu, Remus

    2011-01-01

    This paper describes the design procedure and performance of an LCL grid filter for a medium-voltage neutral point clamped (NPC) converter to be adopted for a multimegawatt wind turbine. The unique filter design challenges in this application are driven by a combination of the medium voltage......-megawatt filter connecting a medium-voltage converter switching at low frequency to the electric grid. This paper demonstrates a frequency domain model based approach to determine the optimum filter parameters that provide the necessary performance under all operating conditions given the necessary design...... converter, a limited allowable switching frequency, component physical size and weight concerns, and the stringent limits for allowable injected current harmonics. Traditional design procedures of grid filters for lower power and higher switching frequency converters are not valid for a multi...

  5. Grid Filter Design for a Multi-Megawatt Medium-Voltage Voltage Source Inverter

    DEFF Research Database (Denmark)

    Rockhill, A.A.; Liserre, Marco; Teodorescu, Remus

    2011-01-01

    converter, a limited allowable switching frequency, component physical size and weight concerns, and the stringent limits for allowable injected current harmonics. Traditional design procedures of grid filters for lower power and higher switching frequency converters are not valid for a multi......This paper describes the design procedure and performance of an LCL grid filter for a medium-voltage neutral point clamped (NPC) converter to be adopted for a multimegawatt wind turbine. The unique filter design challenges in this application are driven by a combination of the medium voltage......-megawatt filter connecting a medium-voltage converter switching at low frequency to the electric grid. This paper demonstrates a frequency domain model based approach to determine the optimum filter parameters that provide the necessary performance under all operating conditions given the necessary design...

  6. Design of Low Power CMOS Circuits using Leakage Control Transistor and Multi-Threshold CMOS Techniques

    OpenAIRE

    2012-01-01

    The scaling down of technology in CMOS circuits, results in the down scaling of threshold voltage thereby increasing the sub-threshold leakage current. An IC consists of many circuits of which some circuits consists critical path like full adder, whereas some circuits like multiplexer and decoder has no specified critical path. LECTOR is a technique for designing leakage power reduced CMOS circuits without affecting the dynamic power dissipation, which can be used for circuits with no specifi...

  7. Music effect on pain threshold evaluated with current perception threshold

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    AIM: Music relieves anxiety and psychotic tension. This effect of music is applied to surgical operation in the hospital and dental office. It is still unclear whether this music effect is only limited to the psychological aspect but not to the physical aspect or whether its music effect is influenced by the mood or emotion of audience. To elucidate these issues, we evaluated the music effect on pain threshold by current perception threshold (CPT) and profile of mood states (POMC) test. METHODS: Healthy 30 subjects (12 men, 18 women, 25-49 years old, mean age 34.9) were tested. (1)After POMC test, all subjects were evaluated pain threshold with CPT by Neurometer (Radionics, USA) under 6 conditions, silence, listening to the slow tempo classic music, nursery music, hard rock music, classic paino music and relaxation music with 30 seconds interval. (2)After Stroop color word test as the stresser, pain threshold was evaluated with CPT under 2 conditions, silence and listening to the slow tempo classic music. RESULTS: Under litening to the music, CPT sores increased, especially 2 000 Hz level related with compression, warm and pain sensation. Type of music, preference of music and stress also affected CPT score. CONCLUSION: The present study demonstrated that the concentration on the music raise the pain threshold and that stress and mood influence the music effect on pain threshold.

  8. Ultra Low Voltage Class AB Switched Current Memory Cells Based on Floating Gate Transistors

    DEFF Research Database (Denmark)

    Mucha, Igor

    1999-01-01

    A proposal for a class AB switched current memory cell, suitable for ultra-low-voltage applications is presented. The proposal employs transistors with floating gates, allowing to build analog building blocks for ultralow supply voltage operation also in CMOS processes with high threshold voltages....... This paper presents the theoretical basis for the design of "floating-gate'' switched current memory cells by giving a detailed description and analysis of the most important impacts degrading the performance of the cells. To support the theoretical assumptions circuits based on "floating-gate'' switched...... current memory cells were designed using a CMOS process with threshold voltages V-T0n = \\V-T0p\\ = 0.9 V for the n- and p-channel devices. Both hand calculations and PSPICE simulations showed that the designed example switched current memory cell allowed a maximum signal range better than +/-18 mu...

  9. Mitigation of Voltage Swells by Static Series Compensator

    DEFF Research Database (Denmark)

    Awad, Hilmy; Blaabjerg, Frede

    2004-01-01

    is lower than a predetermined voltage level, the active power is employed to charge the ESC to this voltage level; 2) otherwise, the overvoltage protection of the SSC must operate. This paper also applies an overvoltage protection scheme based on a combination of a dc resistor with a chopper and the valves...... of the SSC. The design of the dc resistor is discussed. A 10 kV SSC experimental setup is exploited to carry out experiments in the case of balanced and unbalanced voltage swells at the grid side....

  10. Elevated neuronal excitability due to modulation of the voltage-gated sodium channel Nav1.6 by Aβ1-42

    Directory of Open Access Journals (Sweden)

    Xi eWang

    2016-03-01

    Full Text Available Aberrant increases in neuronal network excitability may contribute to the cognitive deficits in Alzheimer’s disease (AD. However, the mechanisms underlying hyperexcitability are not fully understood. Such overexcitation of neuronal networks has been detected in the brains of APP/PS1 mice. In the present study, using current-clamp recording techniques, we observed that 12 days in vitro (DIV primary cultured pyramidal neurons from P0 APP/PS1 mice exhibited a more prominent action potential burst and a lower threshold than WT littermates. Moreover, after treatment with Aβ1-42 peptide, 12 DIV primary cultured neurons showed similar changes, to a greater degree than in controls. Voltage-clamp recordings revealed that the voltage-dependent sodium current density of neurons incubated with Aβ1-42 was significantly increased, without change in the voltage-dependent sodium channel kinetic characteristics. Immunohistochemistry and western blot results showed that, after treatment with Aβ1-42, expressions of Nav and Nav1.6 subtype increased in cultured neurons or APP/PS1 brains compared to control groups. The intrinsic neuronal hyperexcitability of APP/PS1 mice might thus be due to an increased expression of voltage-dependent sodium channels induced by Aβ1-42. These results may illuminate the mechanism of aberrant neuronal networks in AD.

  11. Parton distributions with threshold resummation

    CERN Document Server

    Bonvini, Marco; Rojo, Juan; Rottoli, Luca; Ubiali, Maria; Ball, Richard D; Bertone, Valerio; Carrazza, Stefano; Hartland, Nathan P

    2015-01-01

    We construct a set of parton distribution functions (PDFs) in which fixed-order NLO and NNLO calculations are supplemented with soft-gluon (threshold) resummation up to NLL and NNLL accuracy respectively, suitable for use in conjunction with any QCD calculation in which threshold resummation is included at the level of partonic cross sections. These resummed PDF sets, based on the NNPDF3.0 analysis, are extracted from deep-inelastic scattering, Drell-Yan, and top quark pair production data, for which resummed calculations can be consistently used. We find that, close to threshold, the inclusion of resummed PDFs can partially compensate the enhancement in resummed matrix elements, leading to resummed hadronic cross-sections closer to the fixed-order calculation. On the other hand, far from threshold, resummed PDFs reduce to their fixed-order counterparts. Our results demonstrate the need for a consistent use of resummed PDFs in resummed calculations.

  12. Long term characterization of voltage references

    CERN Document Server

    Halloin, Hubert; Brossard, Julien

    2013-01-01

    We report here the characterization (temperature coefficients and noise level) of selected voltage references in the frequency range from 10^(-5) to 10 Hz. The goal of this work is to update previous studies, with a characterization at lower frequencies, and find voltage references that may be suitable for the space-based interferometry mission eLISA. The requirements of relative output stability of 1 ppm/$\\sqrt{\\text{Hz}}$ down to 0.1 mHz were not met by any of the tested devices, but 4 references approaches the objective : the AD587UQ, the MAX6126AASA50, the LT1021-BCN8-5 and the LT6655BHM. While the first three were already identified as potential devices in previous studies, the later is a new promising candidate using a different technology (bandgap).

  13. Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

    CERN Document Server

    Benoit, M; de Mendizabal, J. Bilbao; Chen, H; Chen, K; Di Bello, F.A; Ferrere, D; Golling, T; Gonzalez-Sevilla, S; Iacobucci, G; Lanni, F; Liu, H; Meng, L; Miucci, A; Muenstermann, D; Nessi, M; Peric, I; Rimoldi, M; Ristic, B; Pinto, M. Vicente Barrero; Vossebeld, J; Weber, M; Wu, W; Xu, L

    2016-01-01

    Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

  14. Extracellular stimulation of nerve cells with electric current spikes induced by voltage steps

    OpenAIRE

    2016-01-01

    A new stimulation paradigm is presented for the stimulation of nerve cells by extracellular electric currents. In the new paradigm stimulation is achieved with the current spike induced by a voltage step whenever the voltage step is applied to a live biological tissue. By experimental evidence and theoretical arguments, it is shown that this spike is well suited for the stimulation of nerve cells. Stimulation of the human tongue is used for proof of principle. Charge injection thresholds are ...

  15. Effect of Electron Seeding on Experimentally Measured Multipactor Discharge Threshold

    Science.gov (United States)

    Noland, Jonathan; Graves, Timothy; Lemon, Colby; Looper, Mark; Farkas, Alex

    2012-10-01

    Multipactor is a vacuum phenomenon in which electrons, moving in resonance with an externally applied electric field, impact material surfaces. If the number of secondary electrons created per primary electron impact averages more than unity, the resonant interaction can lead to an electron avalanche. Multipactor is a generally undesirable phenomenon, as it can cause local heating, absorb power, or cause detuning of RF circuits. In order to increase the probability of multipactor initiation, test facilities often employ various seeding sources such as radioactive sources (Cesium 137, Strontium 90), electron guns, or photon sources. Even with these sources, the voltage for multipactor initiation is not certain as parameters such as material type, RF pulse length, and device wall thickness can all affect seed electron flux and energy in critical gap regions, and hence the measured voltage threshold. This study investigates the effects of seed electron source type (e.g., photons versus beta particles), material type, gap size, and RF pulse length variation on multipactor threshold. In addition to the experimental work, GEANT4 simulations will be used to estimate the production rate of low energy electrons (< 5 keV) by high energy electrons and photons. A comparison of the experimental fluxes to the typical energetic photon and particle fluxes experienced by spacecraft in various orbits will also be made. Initial results indicate that for a simple, parallel plate device made of aluminum, there is no threshold variation (with seed electrons versus with no seed electrons) under continuous-wave RF exposure.

  16. Threshold fracture energy in solid particle erosion

    CERN Document Server

    Argatov, I I; Petrov, Yu V

    2012-01-01

    The effect of geometrical shape of eroding absolutely rigid particles on the threshold rate of failure has been studied. The Shtaerman-Kilchevsky theory of quasi-static blunt impact, which generalizes Hertz's classical impact theory, is used for modeling the frictionless contact interaction of an axially-symmetric particle with an elastic half-space. The incubation time fracture criterion is applied for predicting surface fracture. It is shown that there exist a critical value of the particle shape parameter such that for all its lower values the fracture energy possesses a nonzero minimal value.

  17. Choice of operating voltage for a transmission electron microscope

    Energy Technology Data Exchange (ETDEWEB)

    Egerton, R.F., E-mail: regerton@ualberta.ca

    2014-10-15

    An accelerating voltage of 100–300 kV remains a good choice for the majority of TEM or STEM specimens, avoiding the expense of high-voltage microscopy but providing the possibility of atomic resolution even in the absence of lens-aberration correction. For specimens thicker than a few tens of nm, the image intensity and scattering contrast are likely to be higher than at lower voltage, as is the visibility of ionization edges below 1000 eV (as required for EELS elemental analysis). In thick (>100 nm) specimens, higher voltage ensures less beam broadening and better spatial resolution for STEM imaging and EDX spectroscopy. Low-voltage (e.g. 30 kV) TEM or STEM is attractive for a very thin (e.g. 10 nm) specimen, as it provides higher scattering contrast and fewer problems for valence-excitation EELS. Specimens that are immune to radiolysis suffer knock-on damage at high current densities, and this form of radiation damage can be reduced or avoided by choosing a low accelerating voltage. Low-voltage STEM with an aberration-corrected objective lens (together with a high-angle dark-field detector and/or EELS) offers atomic resolution and elemental identification from very thin specimens. Conventional TEM can provide atomic resolution in low-voltage phase-contrast images but requires correction of chromatic aberration and preferably an electron-beam monochromator. Many non-conducting (e.g. organic) specimens damage easily by radiolysis and radiation damage then determines the TEM image resolution. For bright-field scattering contrast, low kV can provide slightly better dose-limited resolution if the specimen is very thin (a few nm) but considerably better resolution is possible from a thicker specimen, for which higher kV is required. Use of a phase plate in a conventional TEM offers the most dose-efficient way of achieving atomic resolution from beam-sensitive specimens. - Highlights: • 100–300 kV accelerating voltage is suitable for TEM specimens of typical

  18. Scientific evidence contradicts findings and assumptions of Canadian Safety Panel 6: microwaves act through voltage-gated calcium channel activation to induce biological impacts at non-thermal levels, supporting a paradigm shift for microwave/lower frequency electromagnetic field action.

    Science.gov (United States)

    Pall, Martin L

    2015-01-01

    This review considers a paradigm shift on microwave electromagnetic field (EMF) action from only thermal effects to action via voltage-gated calcium channel (VGCC) activation. Microwave/lower frequency EMFs were shown in two dozen studies to act via VGCC activation because all effects studied were blocked by calcium channel blockers. This mode of action was further supported by hundreds of studies showing microwave changes in calcium fluxes and intracellular calcium [Ca2+]i signaling. The biophysical properties of VGCCs/similar channels make them particularly sensitive to low intensity, non-thermal EMF exposures. Non-thermal studies have shown that in most cases pulsed fields are more active than are non-pulsed fields and that exposures within certain intensity windows have much large biological effects than do either lower or higher intensity exposures; these are both consistent with a VGCC role but inconsistent with only a heating/thermal role. Downstream effects of VGCC activation include calcium signaling, elevated nitric oxide (NO), NO signaling, peroxynitrite, free radical formation, and oxidative stress. Downstream effects explain repeatedly reported biological responses to non-thermal exposures: oxidative stress; single and double strand breaks in cellular DNA; cancer; male and female infertility; lowered melatonin/sleep disruption; cardiac changes including tachycardia, arrhythmia, and sudden cardiac death; diverse neuropsychiatric effects including depression; and therapeutic effects. Non-VGCC non-thermal mechanisms may occur, but none have been shown to have effects in mammals. Biologically relevant safety standards can be developed through studies of cell lines/cell cultures with high levels of different VGCCs, measuring their responses to different EMF exposures. The 2014 Canadian Report by a panel of experts only recognizes thermal effects regarding safety standards for non-ionizing radiation exposures. Its position is therefore contradicted by each

  19. Femtosecond damage threshold of multilayer metal films

    Science.gov (United States)

    Ibrahim, Wael M. G.; Elsayed-Ali, Hani E.; Shinn, Michelle D.; Bonner, Carl E.

    2003-05-01

    With the availability of terawatt laser systems with subpicosecond pulses, laser damage to optical components has become the limiting factor for further increases in the output peak power. Evaluation of different material structures in accordance to their suitability for high-power laser systems is essential. Multi-shot damage experiments, using 110 fs laser pulses at 800 nm, on polycrystalline single layer gold films and multi-layer (gold-vanadium, and gold-titanium) films were conducted. The laser incident fluence was varied, in both cases, from 0.1 to 0.6 J/cm2. No evidence of surface damage was apparent in the gold sample up to a fluence of 0.3 J/cm2. The multilayer sample experienced the onset of surface damage at the lowest fluence value used of 0.1 J/cm2. Damage results are in contrast with the time resolved ultrafast thermoreflectivity measurements that revealed a reduction of the thermoreflectivity signal for the multilayer films. This decrease in the thermoreflectivity signal signifies a reduction in the surface electron temperature that should translate in a lower lattice temperature at the later stage. Hence, one should expect a higher damage threshold for the multilayer samples. Comparison of the experimental results with the predictions of the Two-Temperature Model (TTM) is presented. The damage threshold of the single layer gold film corresponds to the melting threshold predicted by the model. In contrast to the single layer gold film, the multi-layer sample damaged at almost one third the damage threshold predicted by the TTM model. Possible damage mechanisms leading to the early onset of damage for the multilayer films are discussed.

  20. Novel Low Loss Active Voltage Clamp Circuit for Series Connection of RCGCT thyristors

    Science.gov (United States)

    Ito, Hiroshi; Suzuki, Akihiro; Iwata, Akihiko

    This paper describes novel low loss active voltage clamp circuits for the series connection of RCGCT thyristors. For high voltage converters the series connection of power semiconductor devices is an essential technique for direct switching of high voltages. Several protection circuits have been applied to the series connection of RCGCT thyristors such as CRD snubber circuits which suppress over-voltages across RCGCT thyristors, and voltage balancing resistors to equalize voltage sharing in steady states. However, significant losses in these protection circuits lower the converter’s efficiency. We propose novel low-loss protection circuits, which have active voltage clamp snubber circuits and static voltage balancing circuits. The clamp capacitor voltage of the active voltage clamp snubber circuits are designed to be higher than the equally divided DC-Link voltage. This method can reduce the loss of the clamp circuit to no more than 1/10 of that of the conventional CRD snubber. Also the static voltage balancing circuits compensate for the voltage imbalance generated by the difference in the leakage current between the series connection RCGCT thyristors.

  1. Voltage Sensors Monitor Harmful Static

    Science.gov (United States)

    2009-01-01

    A tiny sensor, small enough to be worn on clothing, now monitors voltage changes near sensitive instruments after being created to alert Agency workers to dangerous static buildup near fuel operations and avionics. San Diego s Quasar Federal Systems received a Small Business Innovation Research (SBIR) contract from Kennedy Space Center to develop its remote voltage sensor (RVS), a dime-sized electrometer designed to measure triboelectric changes in the environment. One of the unique qualities of the RVS is that it can detect static at greater distances than previous devices, measuring voltage changes from a few centimeters to a few meters away, due to its much-improved sensitivity.

  2. Threshold proxy quantum signature scheme with threshold shared verification

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    A threshold proxy quantum signature scheme with threshold shared verification is proposed. An original signer could authorize a group as its proxy signers. Then only t or more of n persons in the proxy group can generate the proxy signature on behalf of the original signer and any t-1 or fewer ones cannot do that. When the proxy signature needs to be verified,any t or more of n persons belonging to the verification group can verify the message and any t-1 or fewer ones cannot verify the validity of the proxy signature.

  3. Distance protection of multiple-circuit shared tower transmission lines with different voltages. Part I: Fault current magnitude

    DEFF Research Database (Denmark)

    Silva, Filipe Miguel Faria da; Bak, Claus Leth

    2017-01-01

    Multiple-circuit transmission lines combining different voltage levels in one tower present extra challenges when setting a protection philosophy, as faults between voltage levels are possible. This paper presents a detailed theoretical analysis of such combined faults, including the development...... of a formula for estimating the magnitude of the short-circuit current. It is demonstrated that if the faulted phase from the higher voltage level leads the faulted phase from the lower voltage level, a distance relay at the higher voltage level sees the fault in the forward direction, whereas a distance relay...... at the lower voltage level sees the fault in the reverse direction. The opposite happens if the lower voltage level leads the higher voltage level. It is also demonstrated that the magnitude of fault currents of combined faults is normally slightly larger than of equivalent single-phase-to-ground fault...

  4. A New Low Voltage P-MOS Bulk Driven Current Mirror Circuit

    Directory of Open Access Journals (Sweden)

    Anuj Dugaya

    2013-08-01

    Full Text Available This work proposes a new low voltage current mirror circuit using bulk driven technique. Bulk driventechnique is used to reduce the threshold of PMOS used in low voltage current mirror circuits (LVCM.TheProposed circuit consist of 4 PMOS and 5 NMOS. The proposed circuit operated at +0.85 V supplyvoltage.The bandwidth of this circuit has also been enhanced using resistive compensation technique. Theproposed circuit has been simulated in Cadence Design Environment in UMC 180nm CMOS technology. Atransfer characteristic of the proposed circuit has been discussed. The proposed circuit find application inlow voltage and low power analog integrated circuits.

  5. Low Voltage Power Supply Incorporating Ceramic Transformer

    CERN Document Server

    Imori, M

    2007-01-01

    A low voltage power supply provides the regulated output voltage of 1 V from the supply voltage around 48 V. The low voltage power supply incorporates a ceramic transformer which utilizes piezoelectric effect to convert voltage. The ceramic transformer isolates the secondary from the primary, thus providing the ground isolation between the supply and the output voltages. The ceramic transformer takes the place of the conventional magnetic transformer. The ceramic transformer is constructed from a ceramic bar and does not include any magnetic material. So the low voltage power supply can operate under a magnetic field. The output voltage is stabilized by feedback. A feedback loop consists of an error amplifier, a voltage controlled oscillator and a driver circuit. The amplitude ratio of the transformer has dependence on the frequency, which is utilized to stabilize the output voltage. The low voltage power supply is investigated on the analogy of the high voltage power supply similarly incorporating the cerami...

  6. Asymmetric Waveforms Decrease Lethal Thresholds in High Frequency Irreversible Electroporation Therapies

    Science.gov (United States)

    Sano, Michael B.; Fan, Richard E.; Xing, Lei

    2017-01-01

    Irreversible electroporation (IRE) is a promising non-thermal treatment for inoperable tumors which uses short (50–100 μs) high voltage monopolar pulses to disrupt the membranes of cells within a well-defined volume. Challenges with IRE include complex treatment planning and the induction of intense muscle contractions. High frequency IRE (H-FIRE) uses bursts of ultrashort (0.25–5 μs) alternating polarity pulses to produce more predictable ablations and alleviate muscle contractions associated with IRE. However, H-FIRE generally ablates smaller volumes of tissue than IRE. This study shows that asymmetric H-FIRE waveforms can be used to create ablation volumes equivalent to standard IRE treatments. Lethal thresholds (LT) of 505 V/cm and 1316 V/cm were found for brain cancer cells when 100 μs IRE and 2 μs symmetric H-FIRE waveforms were used. In contrast, LT as low as 536 V/cm were found for 2 μs asymmetric H-FIRE waveforms. Reversible electroporation thresholds were 54% lower than LTs for symmetric waveforms and 33% lower for asymmetric waveforms indicating that waveform symmetry can be used to tune the relative sizes of reversible and irreversible ablation zones. Numerical simulations predicted that asymmetric H-FIRE waveforms are capable of producing ablation volumes which were 5.8–6.3x larger than symmetric H-FIRE waveforms indicating that in vivo investigation of asymmetric waveforms is warranted.

  7. An investigation of breakdown voltage in AMTECs

    Science.gov (United States)

    Momozaki, Yoichi; El-Genk, Mohamed S.

    2002-01-01

    Experiments are conducted to investigate the DC electrical breakdown voltage in cesium vapor between two planner molybdenum electrodes, 1.6 cm in diameter, separated by a 0.5 mm gap, and relate the results to the potential electrical breakdown on the cathode side of Alkali Metal Thermal-to-Electric Converters (AMTECs). In the first set of experiments, in which the electrodes are kept at 560 and 650 K, while varying the cesium pressure from 0.71 to 29 Pa, when the cooler electrode is positively biased, breakdown occurs at ~500 V, but at 700 V when the cooler electrode is negatively biased. In the second set of experiments, in which the electrodes are held at 625 and 1100 K and the cesium pressure varied from 1.7 to 235 Pa, when the cooler electrode is positively biased, breakdown voltage is <4 V, but in excess of 400 V when the cooler electrode is negatively biased. Since the first ionization potential and the ionization rate constant of cesium are lower and higher, respectively, than for the sodium (5.14 V) and potassium (4.34 V) vapors in AMTECs, the DC electrical breakdown voltage in an AMTEC is expected to be higher than measured in this work for cesium vapor. .

  8. A threshold sodium current in pyramidal cells in rat hippocampus.

    Science.gov (United States)

    French, C R; Gage, P W

    1985-05-23

    Maintained, inward currents were activated by small depolarizations from the resting membrane potential (-50 to -60 mV) in voltage-clamped, pyramidal neurons in rat hippocampal slices. The currents were apparently Na currents as they were blocked by tetrodotoxin or removal of extracellular Na and were not affected by Cd. They showed little decrease in amplitude during prolonged depolarizations. The increase in Na conductance with depolarization was sigmoidal, with half-maximum conductance at about -50 mV, and saturated at -20 to -30 mV. This 'threshold' Na current may be involved in setting patterns of repetitive firing of action potentials.

  9. Modular High Voltage Power Supply

    Energy Technology Data Exchange (ETDEWEB)

    Newell, Matthew R. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-05-18

    The goal of this project is to develop a modular high voltage power supply that will meet the needs of safeguards applications and provide a modular plug and play supply for use with standard electronic racks.

  10. Inclusive distributions near kinematic thresholds

    CERN Document Server

    Gardi, E

    2006-01-01

    The main challenge in computing inclusive cross sections and decay spectra in QCD is posed by kinematic thresholds. The threshold region is characterized by stringent phase-space constraints that are reflected in large perturbative corrections due to soft and collinear radiation as well as large non-perturbative effects. Major progress in addressing this problem was made in recent years by Dressed Gluon Exponentiation (DGE), a formalism that combines Sudakov and renormalon resummation in moment space. DGE has proven effective in extending the range of applicability of perturbation theory well into the threshold region and in identifying the relevant non-perturbative corrections. Here we review the method from a general perspective using examples from deep inelastic structure functions, event-shape distributions, heavy-quark fragmentation and inclusive decay spectra. A special discussion is devoted to the applications of DGE to radiative and semileptonic B decays that have proven valuable for the interpretatio...

  11. Threshold concepts in dental education.

    Science.gov (United States)

    Kinchin, I M; Cabot, L B; Kobus, M; Woolford, M

    2011-11-01

    The paper presents a conceptual framework to inform dental education. Drawing from a vast body of research into student learning, the simple model presented here has an explanatory value in describing what is currently observed to happen and a predictive value in guiding future teaching practices. We introduce to dental education the application of threshold concepts that have a transformative role in offering a new vision of the curriculum that helps to move away from the medieval transmission model of higher education towards a dual processing model that better reflects the way in which professionals operate within the discipline. Threshold concepts give a role for the student voice in offering a novice perspective which is paradoxically something that is out of reach of the subject expert. Finally, the application of threshold concepts highlights some of the weaknesses in the competency-based training model of clinical teaching. 2011 John Wiley & Sons A/S.

  12. Reliability criteria for voltage stability

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, Carson W.; Silverstein, Brian L. [Bonneville Power Administration, Portland, OR (United States)

    1994-12-31

    In face of costs pressures, there is need to allocate scare resources more effectively in order to achieve voltage stability. This naturally leads to development of probabilistic criteria and notions of rick management. In this paper it is presented a discussion about criteria for long term voltage stability limited to the case in which the time frames are topically several minutes. (author) 14 refs., 1 fig.

  13. A Voltage Quality Detection Method

    DEFF Research Database (Denmark)

    Chen, Zhe; Wei, Mu

    2008-01-01

    This paper presents a voltage quality detection method based on a phase-locked loop (PLL) technique. The technique can detect the voltage magnitude and phase angle of each individual phase under both normal and fault power system conditions. The proposed method has the potential to evaluate vario...... power quality disturbances, such as interruptions, sags and imbalances. Simulation studies have been performed. The effectiveness of the proposed method has been demonstrated under the simulated typical power disturbances....

  14. Application of Distribution Power Electronic Transformer for Medium Voltage

    Directory of Open Access Journals (Sweden)

    Prashant Kumar

    2014-12-01

    Full Text Available In   this   paper   a   distribution   power electronic transformer (DPET for feeding critical loads is presented. The PE based transformer is a multi-port converter that can connect to medium voltage levels on the primary side. Bidirectional power flow is provided to the each module. The presented structure consists of three stages: an input stage, an isolation stage, and an output stage.  The input current is sinusoidal, and it converts the high AC input voltage to low DC voltages. The isolated DC/DC converters are then connected to the DC links and provide galvanic isolation between the HV and LV sides. Finally, a three-phase inverter generates the AC output with the desired amplitude and frequency. The proposed DPET is extremely modular and can be extended for different voltage and power levels. It performs typical functions and has advantages such as power factor correction, elimination of voltage sag and swell, and reduction of voltage flicker in load side. Also in comparison to conventional transformers, it has lower weight, lower volume and eliminates necessity for toxic dielectric coolants the DPET performance is verified in MATLAB simulation.

  15. Turn-on and turn-off voltages of an avalanche p—n junction

    Science.gov (United States)

    Guoqing, Zhang; Dejun, Han; Changjun, Zhu; Xuejun, Zhai

    2012-09-01

    Characteristics of the turn-on and turn-off voltage of avalanche p—n junctions were demonstrated and studied. As opposed to existing reports, the differences between the turn-on and turn-off voltage cannot be neglected when the size of the p—n junction is in the order of microns. The difference increases inversely with the area of a junction, exerting significant influences on characterizing some parameters of devices composed of small avalanche junctions. Theoretical analyses show that the mechanism for the difference lies in the increase effect of the threshold multiplication factor at the turn-on voltage of a junction when the area of a junction decreases. Moreover, the “breakdown voltage" in the formula of the avalanche asymptotic current is, in essence, the avalanche turn-off voltage, and consequently, the traditional expression of the avalanche asymptotic current and the gain of a Geiger mode avalanche photodiode were modified.

  16. High voltage generator circuit with low power and high efficiency applied in EEPROM

    Institute of Scientific and Technical Information of China (English)

    Liu Yan; Zhang Shilin; Zhao Yiqiang

    2012-01-01

    This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory (EEPROM).The low power is minimized by a capacitance divider circuit and a regulator circuit using the controlling clock switch technique.The high efficiency is dependent on the zero threshold voltage (Vth) MOSFET and the charge transfer switch (CTS) charge pump.The proposed high voltage generator circuit has been implemented in a 0.35μm EEPROM CMOS process.Measured results show that the proposed high voltage generator circuit has a low power consumption of about 150.48 μW and a higher pumping efficiency (83.3%) than previously reported circuits.This high voltage generator circuit can also be widely used in low-power flash devices due to its high efficiency and low power dissipation.

  17. Gelation threshold of cross-linked polymer brushes.

    Science.gov (United States)

    Hoffmann, Max; Lang, Michael; Sommer, Jens-Uwe

    2011-02-01

    The cross-linking of polymer brushes is studied using the bond-fluctuation model. By mapping the cross-linking process into a two-dimensional (2D) percolation problem within the lattice of grafting points, we investigate the gelation transition in detail. We show that the particular properties of cross-linked polymer brushes can be reduced to the distribution of bonds which are formed between the grafted chains, and we propose scaling arguments to relate the gelation threshold to the chain length and the grafting density. The gelation threshold is lower than the percolation threshold for 2D bond percolation because of the longer range and broad distribution of bonds formed by the cross-linking process. We term this type of percolation problem star percolation. We observe a broad crossover from mean-field to critical percolation behavior by analyzing the cluster size distribution near the gelation threshold.

  18. Taste preference thresholds for Polycose, maltose, and sucrose in rats.

    Science.gov (United States)

    Sclafani, A; Nissenbaum, J W

    1987-01-01

    The taste preference thresholds of adult female rats for polysaccharide (Polycose), maltose, and sucrose were compared. The nondeprived animals were given 24-hr two-bottle preference tests (saccharide solution vs. water) and, starting at 0.008%, the saccharide concentration was increased daily. The rats first preferred the Polycose solution to water at 0.01% (0.0001 M), the maltose solution to water at 0.09% (0.0025 M), and the sucrose solution to water at 0.09% (0.0026 M). Thus, on a molar basis the rats' Polycose threshold was 25 to 26 times lower than their maltose and sucrose threshold. It was postulated that the low taste threshold for polysaccharides allows the rat to detect starch which, unlike sugar, is very low in solubility.

  19. Baryon Form Factors at Threshold

    Energy Technology Data Exchange (ETDEWEB)

    Baldini Ferroli, Rinaldo [Museo Storico della Fisica e Centro Studi e Ricerche ' E. Fermi' , Rome (Italy); INFN, Laboratori Nazionali di Frascati, Frascati (Italy); Pacetti, Simone [INFN and Dipartimento di Fisica, Universita di Perugia, Perugia (Italy)

    2012-04-15

    An extensive study of the e{sup +}e{sup -}{yields}pp{sup Macron }BABAR cross section data is presented. Two unexpected outcomes have been found: the modulus of the proton form factor is normalized to one at threshold, i.e.: |G{sup p}(4M{sub p}{sup 2})|=1, as a pointlike fermion, and the resummation factor in the Sommerfeld formula is not needed. Other e{sup +}e{sup -} {yields} baryon-antibaryon cross sections show a similar behavior near threshold.

  20. On computational Gestalt detection thresholds.

    Science.gov (United States)

    Grompone von Gioi, Rafael; Jakubowicz, Jérémie

    2009-01-01

    The aim of this paper is to show some recent developments of computational Gestalt theory, as pioneered by Desolneux, Moisan and Morel. The new results allow to predict much more accurately the detection thresholds. This step is unavoidable if one wants to analyze visual detection thresholds in the light of computational Gestalt theory. The paper first recalls the main elements of computational Gestalt theory. It points out a precision issue in this theory, essentially due to the use of discrete probability distributions. It then proposes to overcome this issue by using continuous probability distributions and illustrates it on the meaningful alignment detector of Desolneux et al.

  1. A matter of quantum voltages.

    Science.gov (United States)

    Sellner, Bernhard; Kathmann, Shawn M

    2014-11-14

    Voltages inside matter are relevant to crystallization, materials science, biology, catalysis, and aqueous chemistry. The variation of voltages in matter can be measured by experiment, however, modern supercomputers allow the calculation of accurate quantum voltages with spatial resolutions of bulk systems well beyond what can currently be measured provided a sufficient level of theory is employed. Of particular interest is the Mean Inner Potential (V(o))--the spatial average of these quantum voltages referenced to the vacuum. Here we establish a protocol to reliably evaluate V(o) from quantum calculations. Voltages are very sensitive to the distribution of electrons and provide metrics to understand interactions in condensed phases. In the present study, we find excellent agreement with measurements of V(o) for vitrified water and salt crystals and demonstrate the impact of covalent and ionic bonding as well as intermolecular/atomic interactions. Certain aspects in this regard are highlighted making use of simple model systems/approximations. Furthermore, we predict V(o) as well as the fluctuations of these voltages in aqueous NaCl electrolytes and characterize the changes in their behavior as the resolution increases below the size of atoms.

  2. Characterization of Fundamental Logics for the Sub-Threshold Digital Design

    Institute of Scientific and Technical Information of China (English)

    Yan-Ming He; Ya-Juan He; Yang-Ming Li; Shao-Wei Zhen; Ping Luo

    2013-01-01

    Digital circuits operating in the sub-threshold regime consume the least energy. The strict energy constraints are desired in the applications which work at the lowest possible supply voltage. On the other hand, the conventional design flow utilizes the technology library provided by the foundry with a fixed voltage boundary, which causes problems when the supply scales down to the sub-threshold regime. In this paper, we present a design methodology to characterize the existing cell library with Liberty NCX to facilitate the standard design flow. It is demonstrated in 0.13μm complementary metal-oxide-semiconductor (CMOS) technology with the supply voltage of 300 mV.

  3. Design & Implementation of Zero Voltage Switching Buck Converter

    Directory of Open Access Journals (Sweden)

    A.Suresh Kumar

    2014-09-01

    Full Text Available Zero voltage switching (ZVS buck converter is more preferable over hard switched buck converter for low power, high frequency DC-DC conversion applications. In Zero voltage switching converter, turn on & turn off of a switch occurs at zero voltage that results in lower switching losses. In this converter soft switching is achieved by using resonant components. The optimal values of resonant components are determined by using electric functions derived from circuit configuration. This type of soft switched resonant converter offers very low electromagnetic interference (EMI.This study presents the circuit configuration with least components to realize highly efficient zero voltage switching resonant converter. It’s feasibility is confirmed with the developed proto type model and experimental results are verified.

  4. Methodology for determination of two new sensory thresholds: Compromised acceptance threshold and rejection threshold.

    Science.gov (United States)

    Lima Filho, Tarcísio; Minim, Valéria Paula Rodrigues; Silva, Rita de Cássia Dos Santos Navarro da; Della Lucia, Suzana Maria; Minim, Luis Antônio

    2015-10-01

    The existing methodologies for determining thresholds generate unreliable estimates of the point at which the intensity of a stimulus begins to compromise acceptance or result in sensory rejection of a product. Thus, a new methodology was proposed for determination of two new sensory thresholds: the compromised acceptance threshold (CAT) and the rejection threshold (RT). In this new methodology, increasing or decreasing series of stimulus intensity are measured together with a standard stimulus (control sample) by means of acceptance tests. In the present study, the CAT and RT were determined for sucrose concentrations in grape nectar, demonstrating that when reducing the sucrose concentration of grape nectar form 9.00% (w/v) to 6.87% there begins to occur impairment of product acceptance (CAT), and when reducing the sucrose concentration from 9.00% to 3.83% there begins to occur sensory rejection (RT) of the product. When compared to existing threshold determination methodologies, the proposed methodology permitted for calculating, with greater reliability, the points at which compromise of acceptance (CAT) and sensory rejection (RT) of the product begin to occur. In addition to the case study presented, the proposed methodology has a wide range of applications in science and in the food, cosmetic and pharmaceutical industries. Copyright © 2015 Elsevier Ltd. All rights reserved.

  5. VOLTAGE COMPENSATION USING ARTIFICIAL NEURAL NETWORK

    African Journals Online (AJOL)

    VOLTAGE COMPENSATION USING ARTIFICIAL NEURAL NETWORK: A CASE STUDY OF RUMUOLA DISTRIBUTION NETWORK. ... The artificial neural networks controller engaged to controlling the dynamic voltage ... Article Metrics.

  6. Voltage source inverters for high power, variable-voltage DC power sources

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z. [Department of Engineering and Technology, De Montfort University, Queens Building, The Gateway, Leicester, LE1 9BH, (United Kingdom); Spooner, E. [School of Engineering, University of Durham, Science Laboratories, South Rd, Durham, DRI 3LE, (United Kingdom)

    2001-09-01

    The paper discusses the applications of voltage source inverter (VSI) based power electronic systems for interfacing variable-voltage DC sources to the grid. A variable-speed wind power conversion system is used for illustration, where the VSI-based interface needs to convert a variable DC voltage to a nearly constant AC voltage with high-quality power. The power control principles of VSI are described. Various system configurations and switching strategies are examined by analysis, simulation and experimental methods. It is shown that better utilisation of semiconductors and more flexible control may be achieved by using a separately controlled DC link, rather than a directly connected VSI that has to operate at a lower modulation ratio at higher power. In some cases, multipulse inverter structures may be preferred, despite higher component count, because of reduced switching losses, fault tolerance and the absence of filters. The solutions developed in the study could be applied at a different scale to other renewable energy sources, such as wave or solar photovoltaic devices. (Author)

  7. Threshold property of a nematic liquid crystal cell with two grating surface substrates

    Institute of Scientific and Technical Information of China (English)

    Ye Wen-Jiang; Xing Hong-Yu; Yang Guo-Chen; Yuan Meng-Yao

    2009-01-01

    A grating surface can drive the liquid crystal molecules to orientate along the direction parallel or vertical to the projected plane of the grating surface. The nematic liquid crystal (NLC) cell manufactured with two pre-treated grating surface substrates may realize the vertical display, parallel display and twist display. In this paper, the threshold property of this NLC cell is investigated systematically. With the Frank elastic theory and the equivalent anchoring energy formula of grating surface substrate, the analytic expressions of the threshold voltage related to three displays are obtained, which are dependent on their geometrical parameters such as amplitude δ and pitch λ of the grating surface substrate. For a certain anchoring strength, the threshold voltage increases or decreases with the increase of the value δ/λ of the different displays.

  8. The Nature of Psychological Thresholds

    NARCIS (Netherlands)

    Rouder, Jeffrey N.; Morey, Richard D.

    Following G. T. Fechner (1966), thresholds have been conceptualized as the amount of intensity needed to transition between mental states, such as between a states of unconsciousness and consciousness. With the advent of the theory of signal detection, however, discrete-state theory and the

  9. Threshold enhancement of diphoton resonances

    Directory of Open Access Journals (Sweden)

    Aoife Bharucha

    2016-10-01

    Full Text Available We revisit a mechanism to enhance the decay width of (pseudo-scalar resonances to photon pairs when the process is mediated by loops of charged fermions produced near threshold. Motivated by the recent LHC data, indicating the presence of an excess in the diphoton spectrum at approximately 750 GeV, we illustrate this threshold enhancement mechanism in the case of a 750 GeV pseudoscalar boson A with a two-photon decay mediated by a charged and uncolored fermion having a mass at the 12MA threshold and a small decay width, <1 MeV. The implications of such a threshold enhancement are discussed in two explicit scenarios: i the Minimal Supersymmetric Standard Model in which the A state is produced via the top quark mediated gluon fusion process and decays into photons predominantly through loops of charginos with masses close to 12MA and ii a two Higgs doublet model in which A is again produced by gluon fusion but decays into photons through loops of vector-like charged heavy leptons. In both these scenarios, while the mass of the charged fermion has to be adjusted to be extremely close to half of the A resonance mass, the small total widths are naturally obtained if only suppressed three-body decay channels occur. Finally, the implications of some of these scenarios for dark matter are discussed.

  10. Threshold Concepts and Pedagogic Representation

    Science.gov (United States)

    Meyer, Jan H. F.

    2016-01-01

    Purpose: The purpose of this paper is to present a brief exposure to the development of the threshold concepts framework (TCF), the intention being to illuminate for interested readers a broader landscape of research activity than that perhaps conveyed by the individual contributions to this special edition. Design/Methodology/Approach: There is…

  11. SVPWM Technique with Varying DC-Link Voltage for Common Mode Voltage Reduction in a Matrix Converter and Analytical Estimation of its Output Voltage Distortion

    Science.gov (United States)

    Padhee, Varsha

    Common Mode Voltage (CMV) in any power converter has been the major contributor to premature motor failures, bearing deterioration, shaft voltage build up and electromagnetic interference. Intelligent control methods like Space Vector Pulse Width Modulation (SVPWM) techniques provide immense potential and flexibility to reduce CMV, thereby targeting all the afore mentioned problems. Other solutions like passive filters, shielded cables and EMI filters add to the volume and cost metrics of the entire system. Smart SVPWM techniques therefore, come with a very important advantage of being an economical solution. This thesis discusses a modified space vector technique applied to an Indirect Matrix Converter (IMC) which results in the reduction of common mode voltages and other advanced features. The conventional indirect space vector pulse-width modulation (SVPWM) method of controlling matrix converters involves the usage of two adjacent active vectors and one zero vector for both rectifying and inverting stages of the converter. By suitable selection of space vectors, the rectifying stage of the matrix converter can generate different levels of virtual DC-link voltage. This capability can be exploited for operation of the converter in different ranges of modulation indices for varying machine speeds. This results in lower common mode voltage and improves the harmonic spectrum of the output voltage, without increasing the number of switching transitions as compared to conventional modulation. To summarize it can be said that the responsibility of formulating output voltages with a particular magnitude and frequency has been transferred solely to the rectifying stage of the IMC. Estimation of degree of distortion in the three phase output voltage is another facet discussed in this thesis. An understanding of the SVPWM technique and the switching sequence of the space vectors in detail gives the potential to estimate the RMS value of the switched output voltage of any

  12. A Secure Threshold Group Signature Scheme

    Institute of Scientific and Technical Information of China (English)

    Wang Xiaoming; Fu Fangwei

    2003-01-01

    The threshold group signature is an important kind of signature. So far, many threshold group signature schemes have been proposed, but most of them suffer from conspiracy attack and are insecure. In this paper, a secure threshold group signature scheme is proposed. It can not only satisfy the properties of the threshold group signature, but also withstand the conspiracy attack

  13. Electrode voltage fall and total voltage of a transient arc

    Science.gov (United States)

    Valensi, F.; Ratovoson, L.; Razafinimanana, M.; Masquère, M.; Freton, P.; Gleizes, A.

    2016-06-01

    This paper deals with an experimental study of the components of a transient arc total voltage with duration of a few tens of ms and a current peak close to 1000 A. The cathode tip is made of graphite whereas the flat anode is made either of copper or of graphite; the electrodes gap is a few mm. The analysis of the electrical parameters is supported and validated by fast imaging and by two models: the first one is a 2D physical model of the arc allowing to calculate both the plasma temperature field and the arc voltage; the second model is able to estimate the transient heating of the graphite electrode. The main aim of the study was to detect the possible change of the cathode voltage fall (CVF) during the first instants of the arc. Indeed it is expected that during the first ms the graphite cathode is rather cool and the main mechanism of the electron emission should be the field effect emission, whereas after several tens of ms the cathode is strongly heated and thermionic emission should be predominant. We have observed some change in the apparent CVF but we have shown that this apparent change can be attributed to the variation of the solid cathode resistance. On the other hand, the possible change of CVF corresponding to the transition between a ‘cold’ and a ‘hot’ cathode should be weak and could not be characterized considering our measurement uncertainty of about 2 V. The arc column voltage (ACV) was estimated by subtracting the electrode voltage fall from the total arc voltage. The experimental transient evolution of the ACV is in very good agreement with the theoretical variation predicted by the model, showing the good ability of the model to study this kind of transient arc.

  14. Effects of polarization and absorption on laser induced optical breakdown threshold for skin rejuvenation

    Science.gov (United States)

    Varghese, Babu; Bonito, Valentina; Turco, Simona; Verhagen, Rieko

    2016-03-01

    Laser induced optical breakdown (LIOB) is a non-linear absorption process leading to plasma formation at locations where the threshold irradiance for breakdown is surpassed. In this paper we experimentally demonstrate the influence of polarization and absorption on laser induced breakdown threshold in transparent, absorbing and scattering phantoms made from water suspensions of polystyrene microspheres. We demonstrate that radially polarized light yields a lower irradiance threshold for creating optical breakdown compared to linearly polarized light. We also demonstrate that the thermal initiation pathway used for generating seed electrons results in a lower irradiance threshold compared to multiphoton initiation pathway used for optical breakdown.

  15. Unbalanced Voltage Compensation in Low Voltage Residential AC Grids

    DEFF Research Database (Denmark)

    Trintis, Ionut; Douglass, Philip; Munk-Nielsen, Stig

    2016-01-01

    This paper describes the design and test of a control algorithm for active front-end rectifiers that draw power from a residential AC grid to feed heat pump loads. The control algorithm is able to control the phase to neutral or phase to phase RMS voltages at the point of common coupling....... The voltage control was evaluated with either active or reactive independent phase load current control. The control performance in field operation in a residential grid situated in Bornholm, Denmark was investigated for different use cases....

  16. Low voltage n-type OFET based on double insulators

    Institute of Scientific and Technical Information of China (English)

    ZHOU Jian-lin; ZHANG Fu-jia

    2008-01-01

    A top contact n-type organic field-effect transistor with low operating voltage was fabricated by employing Ta2O5/PMMA as the double insulators and PTCDI-Cl2 as the semiconductor active layer. The Ta2O5 layer was prepared by using simple economical anodization technique and the PMMA layer was prepared by using the spin-coating method. Compared with the OFET with single Ta2O5 insulator, the device with double insulators shows obviously better electrical performance. It has a field effect electron mobility of 0.063 cm2/Vs, an on/offratio of 1.7×104 and a threshold voltage of 2.3 V.

  17. Automated Voltage Control in LHCb

    CERN Document Server

    Granado Cardoso, L; Jacobsson, R

    2011-01-01

    LHCb is one of the 4 LHC experiments. In order to ensure the safety of the detector and to maximize efficiency, LHCb needs to coordinate its own operations, in particular the voltage configuration of the different subdetectors, according to the accelerator status. A control software has been developed for this purpose, based on the Finite State Machine toolkit and the SCADA system used for control throughout LHCb (and the other LHC experiments). This software permits to efficiently drive both the Low Voltage (LV) and High Voltage (HV) systems of the 10 different sub-detectors that constitute LHCb, setting each sub-system to the required voltage (easily configurable at run-time) based on the accelerator state. The control software is also responsible for monitoring the state of the Sub-detector voltages and adding it to the event data in the form of status-bits. Safe and yet flexible operation of the LHCb detector has been obtained and automatic actions, triggered by the state changes of the ...

  18. Electrophysiological analyses of threshold conditions and rate-dependent failure of excitation in single myocytes from rabbit ventricle.

    Science.gov (United States)

    Firek, L; Giles, W R

    1997-11-01

    The changes in transmembrane ionic currents that underlie normal excitability and rate-dependent failure were studied in single cells from rabbit ventricle by using whole cell voltage clamp methods. When trains of brief (1 to 2 ms) stimuli are applied at strengths very close to the threshold for excitation, a number of different patterns of action potential entrainment and failure are observed. In an individual cell, a characteristic pattern of entrainment or failure can be maintained for a relatively long time, allowing both a detailed description and a quantitative investigation of the ionic basis for this phenomenon. Three hypotheses for rate-dependent failure of excitation in rabbit ventricle were examined. The first is that following relatively high rates of stimulation, the intracellular calcium ion concentration increases and, secondarily, a background inwardly rectifying potassium ion current (IK1) decreases, thereby lowering the excitation threshold. The second hypothesis is that residual activation of the delayed rectifier potassium ion current (IK) causes the stimulus to become subthreshold as the rate of stimulation increases. The third hypothesis is that small changes in the time and voltage dependence of the inactivation and reactivation of the sodium ion current (INa) result in less net inward ion current for a given waveform of depolarization, and the cell therefore becomes inexcitable (eg, to every second stimulus). The calcium ion hypothesis was tested by buffering changes in intracellular calcium ion concentrations with BAPTA. The results strongly suggest that changes in intracellular calcium ion concentrations do not contribute significantly to the observed patterns of failure of excitation. The delayed rectifier hypothesis was evaluated using the class III antiarrhythmic drug dofetilide, which selectively blocks a large fraction of the IK current in rabbit ventricle. Dofetilide slightly decreased the stimulus threshold, suggesting that residual

  19. Development of a New Cascade Voltage-Doubler for Voltage Multiplication

    OpenAIRE

    Arash Toudeshki; Norman Mariun; Hashim Hizam; Noor Izzri Abdul Wahab

    2014-01-01

    For more than eight decades, cascade voltage-doubler circuits are used as a method to produce DC output voltage higher than the input voltage. In this paper, the topological developments of cascade voltage-doublers are reviewed. A new circuit configuration for cascade voltage-doubler is presented. This circuit can produce a higher value of the DC output voltage and better output quality compared to the conventional cascade voltage-doubler circuits, with the same number of stages.

  20. Low-Energy Real-Time OS Using Voltage Scheduling Algorithm for Variable Voltage Processors

    OpenAIRE

    Okuma, Takanori; Yasuura, Hiroto

    2001-01-01

    This paper presents a real-time OS based on $ mu $ITRON using proposed voltage scheduling algorithm for variable voltage processors which can vary supply voltage dynamically. The proposed voltage scheduling algorithms assign voltage level for each task dynamically in order to minimize energy consumption under timing constraints. Using the presented real-time OS, running tasks with low supply voltage leads to drastic energy reduction. In addition, the presented voltage scheduling algorithm is ...

  1. Simple buck/boost voltage regulator

    Science.gov (United States)

    Paulkovich, J.; Rodriguez, G. E.

    1980-01-01

    Circuit corrects low or high supply voltage, produces regulated output voltage. Circuit has fewer components because inductory/transformer combination and pulse-width modulator serve double duty. Regulator handles input voltage variation from as low as one half output voltage to as high as input transistor rating. Solar arrays, fuel cells, and thermionic generators might use this regulator.

  2. 30 CFR 18.47 - Voltage limitation.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Voltage limitation. 18.47 Section 18.47 Mineral... § 18.47 Voltage limitation. (a) A tool or switch held in the operator's hand or supported against his... particular voltage(s) are provided in the design and construction of the equipment, its wiring,...

  3. Cavity Voltage Phase Modulation MD

    CERN Document Server

    Mastoridis, Themistoklis; Molendijk, John; Timko, Helga; CERN. Geneva. ATS Department

    2016-01-01

    The LHC RF/LLRF system is currently configured for extremely stable RF voltage to minimize transient beam loading effects. The present scheme cannot be extended beyond nominal beam current since the demanded power would exceed the peak klystron power and lead to saturation. A new scheme has therefore been proposed: for beam currents above nominal (and possibly earlier), the cavity phase modulation by the beam will not be corrected (transient beam loading), but the strong RF feedback and One-Turn Delay feedback will still be active for loop and beam stability in physics. To achieve this, the voltage set point will be adapted for each bunch. The goal of this MD was to test a new algorithm that would adjust the voltage set point to achieve the cavity phase modulation that would minimize klystron forward power.

  4. Portable High Voltage Impulse Generator

    Directory of Open Access Journals (Sweden)

    S. Gómez

    2011-07-01

    Full Text Available This paper presents a portable high voltage impulse generator which was designed and built with insulation up to 20 kV. This design was based on previous work in which simulation software for standard waves was developed. Commercial components and low-cost components were used in this work; however, these particular elements are not generally used for high voltage applications. The impulse generators used in industry and laboratories are usually expensive; they are built to withstand extra high voltage and they are big, making them impossible to transport. The proposed generator is portable, thereby allowing tests to be made on devices that cannot be moved from their location. The results obtained with the proposed impulse generator were satisfactory in terms of time and waveforms compared to other commercial impulse generators and the standard impulse wave simulator.

  5. Reversible Audiometric Threshold Changes in Children with Uncomplicated Malaria

    Directory of Open Access Journals (Sweden)

    George O. Adjei

    2013-01-01

    Full Text Available Background. Plasmodium falciparum malaria, as well as certain antimalarial drugs, is associated with hearing impairment in adults. There is little information, however, on the extent, if any, of this effect in children, and the evidence linking artemisinin combination therapies (ACTs with hearing is inconclusive. Methods. Audiometry was conducted in children with uncomplicated malaria treated with artesunate-amodiaquine (n=37, artemether-lumefantrine (n=35, or amodiaquine (n=8 in Accra, Ghana. Audiometry was repeated 3, 7, and 28 days later and after 9 months. Audiometric thresholds were compared with those of a control group of children (n=57 from the same area. Findings. During the acute stage, hearing threshold levels of treated children were significantly elevated compared with controls (P<0.001. The threshold elevations persisted up to 28 days, but no differences in hearing thresholds were evident between treated children and controls after 9 months. The hearing thresholds of children treated with the two ACT regimens were comparable but lower than those of amodiaquine-treated children during acute illness. Interpretation. Malaria is the likely cause of the elevated hearing threshold levels during the acute illness, a finding that has implications for learning and development in areas of intense transmission, as well as for evaluating potential ototoxicity of new antimalarial drugs.

  6. Excitation threshold for subharmonic generation from contrast microbubbles.

    Science.gov (United States)

    Katiyar, Amit; Sarkar, Kausik

    2011-11-01

    Six models of contrast microbubbles are investigated to determine the excitation threshold for subharmonic generation. The models are applied to a commercial contrast agent; its characteristic parameters according to each model are determined using experimentally measured ultrasound attenuation. In contrast to the classical perturbative result, the minimum threshold for subharmonic generation is not always predicted at excitation with twice the resonance frequency; instead it occurs over a range of frequencies from resonance to twice the resonance frequency. The quantitative variation of the threshold with frequency depends on the model and the bubble radius. All models are transformed into a common interfacial rheological form, where the encapsulation is represented by two radius dependent surface properties-effective surface tension and surface dilatational viscosity. Variation of the effective surface tension with radius, specifically having an upper limit (resulting from strain softening or rupture of the encapsulation during expansion), plays a critical role. Without the upper limit, the predicted threshold is extremely large, especially near the resonance frequency. Having a lower limit on surface tension (e.g., zero surface tension in the buckled state) increases the threshold value at twice the resonance frequency, in some cases shifting the minimum threshold toward resonance.

  7. A low voltage CMOS low drop-out voltage regulator

    Science.gov (United States)

    Bakr, Salma Ali; Abbasi, Tanvir Ahmad; Abbasi, Mohammas Suhaib; Aldessouky, Mohamed Samir; Abbasi, Mohammad Usaid

    2009-05-01

    A low voltage implementation of a CMOS Low Drop-Out voltage regulator (LDO) is presented. The requirement of low voltage devices is crucial for portable devices that require extensive computations in a low power environment. The LDO is implemented in 90nm generic CMOS technology. It generates a fixed 0.8V from a 2.5V supply which on discharging goes to 1V. The buffer stage used is unity gain configured unbuffered OpAmp with rail-to-rail swing input stage. The simulation result shows that the implemented circuit provides load regulation of 0.004%/mA and line regulation of -11.09mV/V. The LDO provides full load transient response with a settling time of 5.2μs. Further, the dropout voltage is 200mV and the quiescent current through the pass transistor (Iload=0) is 20μA. The total power consumption of this LDO (excluding bandgap reference) is only 80μW.

  8. Implementation of Dynamic Voltage Restorer for Mitigation of Voltage Sag

    Directory of Open Access Journals (Sweden)

    K.Vinod Kumar

    2013-07-01

    Full Text Available Power quality is one of major concerns in the present. It has become important, especially with the introduction of sophisticated devices, whose performance is very sensitive to the quality of power supply. The dynamic voltage restorer (DVR is one of the modern devices used in distribution systems to improve the power quality. In this paper, emergency control in distribution systems is discussed by using the proposed multifunctional DVR control strategy.Also, themultiloop controller using the Posicast and P+Resonant controllers is proposed in order to improve the transient response and eliminate the steady state error in DVR response,respectively.The proposed process is applied to some riots in load voltage effected by induction motors starting, and a three-phase short circuit fault. The three-phase short circuits, and the large induction motors are suddenly started then voltage sags areoccurred.The innovation here is that by using the Multifunctional Dynamic Voltage Restorer, improve the power quality in distribution side. Simulation results show the capability of the DVR to control the emergency conditions of the distribution systems by using MATLAB/Simulink software.

  9. The high voltage homopolar generator

    Science.gov (United States)

    Price, J. H.; Gully, J. H.; Driga, M. D.

    1986-11-01

    System and component design features of proposed high voltage homopolar generator (HVHPG) are described. The system is to have an open circuit voltage of 500 V, a peak output current of 500 kA, 3.25 MJ of stored inertial energy and possess an average magnetic-flux density of 5 T. Stator assembly components are discussed, including the stator, mount structure, hydrostatic bearings, main and motoring brushgears and rotor. Planned operational procedures such as monitoring the rotor to full speed and operation with a superconducting field coil are delineated.

  10. Elicitation threshold of cobalt chloride

    DEFF Research Database (Denmark)

    Fischer, Louise A; Johansen, Jeanne D; Voelund, Aage

    2016-01-01

    BACKGROUND: Cobalt is a strong skin sensitizer (grade 5 of 5 in the guinea-pig maximization test) that is used in various industrial and consumer applications. To prevent sensitization to cobalt and elicitation of allergic cobalt dermatitis, information about the elicitation threshold level...... of cobalt is important. OBJECTIVE: To identify the dermatitis elicitation threshold levels in cobalt-allergic individuals. MATERIALS AND METHODS: Published patch test dose-response studies were reviewed to determine the elicitation dose (ED) levels in dermatitis patients with a previous positive patch test...... reaction to cobalt. A logistic dose-response model was applied to data collected from the published literature to estimate ED values. The 95% confidence interval (CI) for the ratio of mean doses that can elicit a reaction in 10% (ED(10)) of a population was calculated with Fieller's method. RESULTS...

  11. Threshold electrodisintegration of 3He

    Science.gov (United States)

    Hicks, R. S.; Hotta, A.; Churchwell, S.; Jiang, X.; Peterson, G. A.; Shaw, J.; Asavapibhop, B.; Berisso, M. C.; Bosted, P. E.; Burchesky, K.; Miskimen, R. A.; Rock, S. E.; Nakagawa, I.; Tamae, T.; Suda, T.; Golak, J.; Skibiński, R.; Witała, H.; Casagrande, F.; Turchinetz, W.; Cichocki, A.; Wang, K.; Glöckle, W.; Kamada, H.; Kobayashi, T.; Nogga, A.

    2003-06-01

    Cross sections were measured for the near-threshold electrodisintegration of 3He at momentum transfer values of q=2.4, 4.4, and 4.7 fm-1. From these and prior measurements the transverse and longitudinal response functions RT and RL were deduced. Comparisons are made against previously published and new nonrelativistic A=3 calculations using the best available nucleon-nucleon NN potentials. In general, for q<2 fm-1 these calculations accurately predict the threshold electrodisintegration of 3He. Agreement at increasing q demands consideration of two-body terms, but discrepancies still appear at the highest momentum transfers probed, perhaps due to the neglect of relativistic dynamics, or to the underestimation of high-momentum wave-function components.

  12. On-chip High-Voltage Generator Design

    CERN Document Server

    Tanzawa, Toru

    2013-01-01

    This book describes high-voltage generator design with switched-capacitor multiplier techniques.  The author provides various design techniques for switched-capacitor on-chip high-voltage generators, including charge pump circuits, regulators, level shifters, references, and oscillators.  Readers will see these techniques applied to system design in order to address the challenge of how the on-chip high-voltage generator is designed for Flash memories, LCD drivers, and other semiconductor devices to optimize the entire circuit area and power efficiency with a low voltage supply, while minimizing the cost.   ·         Shows readers how to design charge pump circuits with lower voltage operation, higher power efficiency, and smaller circuit area; ·         Describes comprehensive circuits and systems design of on-chip high-voltage generators; ·         Covers all the component circuit blocks, including charge pumps, pump regulators, level shifters, oscillators, and references.

  13. Built-in voltage of a silicon p-n junction having a heavily doped region

    Science.gov (United States)

    Sinha, Amitabha

    1984-01-01

    An analysis of the built-in voltage of a silicon p-n junction has been done, taking into account the band-gap narrowing effects in the heavily doped region. It has been observed that much lower values of built-in voltage are obtained when heavy doping effects are considered. Also, the magnitude of built-in voltage decreases when the temperature of the p-n junction is increased.

  14. Low-voltage coherent electron imaging based on a single-atom electron

    OpenAIRE

    Chang, Wei-Tse; Lin, Chun-Yueh; Hsu, Wei-Hao; Chang, Mu-Tung; Chen, Yi-Sheng; Hwu, En-Te; Hwang, Ing-Shouh

    2015-01-01

    It has been a general trend to develop low-voltage electron microscopes due to their high imaging contrast of the sample and low radiation damage. Atom-resolved transmission electron microscopes with voltages as low as 15-40 kV have been demonstrated. However, achieving atomic resolution at voltages lower than 10 kV is extremely difficult. An alternative approach is coherent imaging or phase retrieval imaging, which requires a sufficiently coherent source and an adequately small detection are...

  15. Color-detection thresholds in rhesus macaque monkeys and humans.

    Science.gov (United States)

    Gagin, Galina; Bohon, Kaitlin S; Butensky, Adam; Gates, Monica A; Hu, Jiun-Yiing; Lafer-Sousa, Rosa; Pulumo, Reitumetse L; Qu, Jane; Stoughton, Cleo M; Swanbeck, Sonja N; Conway, Bevil R

    2014-07-15

    Macaque monkeys are a model of human color vision. To facilitate linking physiology in monkeys with psychophysics in humans, we directly compared color-detection thresholds in humans and rhesus monkeys. Colors were defined by an equiluminant plane of cone-opponent color space. All subjects were tested on an identical apparatus with a four-alternative forced-choice task. Targets were 2° square, centered 2° from fixation, embedded in luminance noise. Across all subjects, the change in detection thresholds from initial testing to plateau performance (“learning”) was similar for +L − M (red) colors and +M − L (bluish-green) colors. But the extent of learning was higher for +S (lavender) than for −S (yellow-lime); moreover, at plateau performance, the cone contrast at the detection threshold was higher for +S than for −S. These asymmetries may reflect differences in retinal circuitry for S-ON and S-OFF. At plateau performance, the two species also had similar detection thresholds for all colors, although monkeys had shorter reaction times than humans and slightly lower thresholds for colors that modulated L/M cones. We discuss whether these observations, together with previous work showing that monkeys have lower spatial acuity than humans, could be accounted for by selective pressures driving higher chromatic sensitivity at the cost of spatial acuity amongst monkeys, specifically for the more recently evolved L − M mechanism.

  16. Thresholds for Universal Concatenated Quantum Codes

    Science.gov (United States)

    Chamberland, Christopher; Jochym-O'Connor, Tomas; Laflamme, Raymond

    2016-07-01

    Quantum error correction and fault tolerance make it possible to perform quantum computations in the presence of imprecision and imperfections of realistic devices. An important question is to find the noise rate at which errors can be arbitrarily suppressed. By concatenating the 7-qubit Steane and 15-qubit Reed-Muller codes, the 105-qubit code enables a universal set of fault-tolerant gates despite not all of them being transversal. Importantly, the cnot gate remains transversal in both codes, and as such has increased error protection relative to the other single qubit logical gates. We show that while the level-1 pseudothreshold for the concatenated scheme is limited by the logical Hadamard gate, the error suppression of the logical cnot gates allows for the asymptotic threshold to increase by orders of magnitude at higher levels. We establish a lower bound of 1.28 ×10-3 for the asymptotic threshold of this code, which is competitive with known concatenated models and does not rely on ancillary magic state preparation for universal computation.

  17. Threshold enhancement of diphoton resonances

    Science.gov (United States)

    Bharucha, Aoife; Djouadi, Abdelhak; Goudelis, Andreas

    2016-10-01

    We revisit a mechanism to enhance the decay width of (pseudo-)scalar resonances to photon pairs when the process is mediated by loops of charged fermions produced near threshold. Motivated by the recent LHC data, indicating the presence of an excess in the diphoton spectrum at approximately 750 GeV, we illustrate this threshold enhancement mechanism in the case of a 750 GeV pseudoscalar boson A with a two-photon decay mediated by a charged and uncolored fermion having a mass at the 1/2MA threshold and a small decay width, photons predominantly through loops of charginos with masses close to 1/2MA and ii) a two Higgs doublet model in which A is again produced by gluon fusion but decays into photons through loops of vector-like charged heavy leptons. In both these scenarios, while the mass of the charged fermion has to be adjusted to be extremely close to half of the A resonance mass, the small total widths are naturally obtained if only suppressed three-body decay channels occur. Finally, the implications of some of these scenarios for dark matter are discussed.

  18. Highly stable carbon nanotube top-gate transistors with tunable threshold voltage

    NARCIS (Netherlands)

    Wang, H.; Cobb, B.; Breemen, A. van; Gelinck, G.H.; Bao, Z.

    2014-01-01

    Carbon-nanotube top-gate transistors with fluorinated dielectrics are presented. With PTrFE as the dielectric, the devices have absent or small hysteresis at different sweep rates and excellent bias-stress stability under ambient conditions. Ambipolar single-walled carbon nanotube (SWNT) transistors

  19. Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Shu; Liu, Shenghou; Liu, Cheng; Lu, Yunyou; Chen, Kevin J., E-mail: eekjchen@ust.hk [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2014-12-01

    In this work, we attempt to reveal the underlying mechanisms of divergent V{sub TH}-thermal-stabilities in III-nitride metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) and MOS-Channel-HEMT (MOSC-HEMT). In marked contrast to MOSC-HEMT featuring temperature-independent V{sub TH}, MIS-HEMT with the same high-quality gate-dielectric/III-nitride interface and similar interface trap distribution exhibits manifest thermally induced V{sub TH} shift. The temperature-dependent V{sub TH} of MIS-HEMT is attributed to the polarized III-nitride barrier layer, which spatially separates the critical gate-dielectric/III-nitride interface from the channel and allows “deeper” interface trap levels emerging above the Fermi level at pinch-off. This model is further experimentally validated by distinct V{sub G}-driven Fermi level movements at the critical interfaces in MIS-HEMT and MOSC-HEMT. The mechanisms of polarized III-nitride barrier layer in influencing V{sub TH}-thermal-stability provide guidelines for the optimization of insulated-gate III-nitride power switching devices.

  20. SIMULTANEOUS OPTIMIZATION OF STANDBY AND ACTIVE ENERGY FOR SUB-THRESHOLD CIRCUITS

    Directory of Open Access Journals (Sweden)

    M. R. Taha

    2016-12-01

    Full Text Available Increased downscaling of CMOS circuits with respect to feature size and threshold voltage has a result ofdramatically increasing in leakage current. So, leakage power reduction is an important design issue foractive and standby modes as long as the technology scaling increased. In this paper, a simultaneous activeand standby energy optimization methodology is proposed for 22 nm sub-threshold CMOS circuits. In thefirst phase, we investigate the dual threshold voltage design for active energy per cycleminimization. Aslack based genetic algorithm is proposed to find the optimal reverse body bias assignment to set of noncriticalpaths gates to ensure low active energy per cycle with the maximum allowable frequency at theoptimal supply voltage. The second phase, determine the optimal reverse body bias that can be applied toall gates for standby power optimization at the optimal supply voltage determined from the first phase.Therefore, there exist two sets of gates and two reverse body bias values for each set. The reverse body biasis switched between these two values in response to the mode of operation. Experimental results areobtained for some ISCAS-85 benchmark circuits such as 74L85, 74283, ALU74181, and 16 bit RCA. Theoptimized circuits show significant energy saving ranged (from 14.5% to 42.28% and standby power saving ranged (from 62.8% to 67%.

  1. Rainfall thresholds for the possible occurrence of landslides in Italy

    Directory of Open Access Journals (Sweden)

    M. T. Brunetti

    2010-03-01

    Full Text Available In Italy, rainfall is the primary trigger of landslides that frequently cause fatalities and large economic damage. Using a variety of information sources, we have compiled a catalogue listing 753 rainfall events that have resulted in landslides in Italy. For each event in the catalogue, the exact or approximate location of the landslide and the time or period of initiation of the slope failure is known, together with information on the rainfall duration D, and the rainfall mean intensity I, that have resulted in the slope failure. The catalogue represents the single largest collection of information on rainfall-induced landslides in Italy, and was exploited to determine the minimum rainfall conditions necessary for landslide occurrence in Italy, and in the Abruzzo Region, central Italy. For the purpose, new national rainfall thresholds for Italy and new regional rainfall thresholds for the Abruzzo Region were established, using two independent statistical methods, including a Bayesian inference method and a new Frequentist approach. The two methods proved complementary, with the Bayesian method more suited to analyze small data sets, and the Frequentist method performing better when applied to large data sets. The new regional thresholds for the Abruzzo Region are lower than the new national thresholds for Italy, and lower than the regional thresholds proposed in the literature for the Piedmont and Lombardy Regions in northern Italy, and for the Campania Region in southern Italy. This is important, because it shows that landslides in Italy can be triggered by less severe rainfall conditions than previously recognized. The Frequentist method experimented in this work allows for the definition of multiple minimum rainfall thresholds, each based on a different exceedance probability level. This makes the thresholds suited for the design of probabilistic schemes for the prediction of rainfall-induced landslides. A scheme based on four

  2. Superstrate sub-cell voltage-matched multijunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mascarenhas, Angelo; Alberi, Kirstin

    2016-03-15

    Voltage-matched thin film multijunction solar cell and methods of producing cells having upper CdTe pn junction layers formed on a transparent substrate which in the completed device is operatively positioned in a superstate configuration. The solar cell also includes a lower pn junction formed independently of the CdTe pn junction and an insulating layer between CdTe and lower pn junctions. The voltage-matched thin film multijunction solar cells further include a parallel connection between the CdTe pn junction and lower pn junctions to form a two-terminal photonic device. Methods of fabricating devices from independently produced upper CdTe junction layers and lower junction layers are also disclosed.

  3. Level reduction and the quantum threshold theorem

    Science.gov (United States)

    Aliferis, Panagiotis (Panos)

    quantum threshold theorem for coherent and leakage noise and for quantum computation by measurements. In addition, the proof provides a methodology which allows us to establish improved rigorous lower bounds on the value of the quantum accuracy threshold.

  4. Novel Interleaved Converter with Extra-High Voltage Gain to Process Low-Voltage Renewable-Energy Generation

    Directory of Open Access Journals (Sweden)

    Chih-Lung Shen

    2016-10-01

    Full Text Available This paper presents a novel interleaved converter (NIC with extra-high voltage gain to process the power of low-voltage renewable-energy generators such as photovoltaic (PV panel, wind turbine, and fuel cells. The NIC can boost a low input voltage to a much higher voltage level to inject renewable energy to DC bus for grid applications. Since the NIC has two circuit branches in parallel at frond end to share input current, it is suitable for high power applications. In addition, the NIC is controlled in an interleaving pattern, which has the advantages that the NIC has lower input current ripple, and the frequency of the ripple is twice the switching frequency. Two coupled inductors and two switched capacitors are incorporated to achieve a much higher voltage gain than conventional high step-up converters. The proposed NIC has intrinsic features such as leakage energy totally recycling and low voltage stress on power semiconductor. Thorough theoretical analysis and key parameter design are presented in this paper. A prototype is built for practical measurements to validate the proposed NIC.

  5. Energy reduction through voltage scaling and lightweight checking

    Science.gov (United States)

    Kadric, Edin

    As the semiconductor roadmap reaches smaller feature sizes and the end of Dennard Scaling, design goals change, and managing the power envelope often dominates delay minimization. Voltage scaling remains a powerful tool to reduce energy. We find that it results in about 60% geomean energy reduction on top of other common low-energy optimizations with 22nm CMOS technology. However, when voltage is reduced, it becomes easier for noise and particle strikes to upset a node, potentially causing Silent Data Corruption (SDC). The 60% energy reduction, therefore, comes with a significant drop in reliability. Duplication with checking and triple-modular redundancy are traditional approaches used to combat transient errors, but spending 2--3x the energy for redundant computation can diminish or reverse the benefits of voltage scaling. As an alternative, we explore the opportunity to use checking operations that are cheaper than the base computation they are guarding. We devise a classification system for applications and their lightweight checking characteristics. In particular, we identify and evaluate the effectiveness of lightweight checks in a broad set of common tasks in scientific computing and signal processing. We find that the lightweight checks cost only a fraction of the base computation (0-25%) and allow us to recover the reliability losses from voltage scaling. Overall, we show about 50% net energy reduction without compromising reliability compared to operation at the nominal voltage. We use FPGAs (Field-Programmable Gate Arrays) in our work, although the same ideas can be applied to different systems. On top of voltage scaling, we explore other common low-energy techniques for FPGAs: transmission gates, gate boosting, power gating, low-leakage (high-Vth) processes, and dual-V dd architectures. We do not scale voltage for memories, so lower voltages help us reduce logic and interconnect energy, but not memory energy. At lower voltages, memories become dominant

  6. VOLTAGE REGULATORS OF SYNCHRONOUS GENERATORS

    Directory of Open Access Journals (Sweden)

    Grigorash O. V.

    2015-06-01

    Full Text Available Synchronous generators are the primary source of electrical power autonomous electrosupply systems, including backup systems. They are also used in a structure of rotating electricity converters and are widely used in renewable energy as part of wind power plants of small, mini and micro hydroelectric plants. Increasing the speed and the accuracy of the system of the voltage regulation of synchronous generators is possible due to the development of combined systems containing more stabilizers. The article illustrates the functional schemes of circuit voltage stabilizers and frequency synchronous generators (with electromagnetic excitation and permanent magnet excitation and describes the features of their work, including two and three-aggregate rotating converters of electricity used in uninterruptible power supply systems. To improve the technical characteristics of the system of stabilization we have proposed functional solutions for stabilizers of synchronous generators made on the base of direct frequency converters and using a transformer with a rotating magnetic field. To improve the reliability of and to improve the operational characteristics of the autonomous independent sources of electricity we suggest creating the main functional blocks and the elements of the stabilization system in a modular way. The functional circuit solutions of voltage regulators of synchronous generators and the characteristics of their work considered in the article, are able to improve the efficiency of pre-design work in the development of new technical solutions for stabilizing the voltage and the frequency in synchronous generators of electrosupply autonomous systems

  7. Frequency-controlled voltage regulator

    Science.gov (United States)

    Mclyman, W. T.

    1980-01-01

    Converting input ac to higher frequency reduce size and weight and makes possible unique kind of regulation. Since conversion frequency is above range of human hearing, supply generated on audible noise. It also exploits highfrequency conversion features to regulate its output voltage in novel way. Circuit is inherently short-circuit proof.

  8. Investigation of excimer laser ablation threshold of polymers using a microphone

    Energy Technology Data Exchange (ETDEWEB)

    Krueger, Joerg; Niino, Hiroyuki; Yabe, Akira

    2002-09-30

    KrF excimer laser ablation of polyethylene terephthalate (PET), polyimide (PI) and polycarbonate (PC) in air was studied by an in situ monitoring technique using a microphone. The microphone signal generated by a short acoustic pulse represented the etch rate of laser ablation depending on the laser fluence, i.e., the ablation 'strength'. From a linear relationship between the microphone output voltage and the laser fluence, the single-pulse ablation thresholds were found to be 30 mJ cm{sup -2} for PET, 37 mJ cm{sup -2} for PI and 51 mJ cm{sup -2} for PC (20-pulses threshold). The ablation thresholds of PET and PI were not influenced by the number of pulses per spot, while PC showed an incubation phenomenon. A microphone technique provides a simple method to determine the excimer laser ablation threshold of polymer films.

  9. Investigation of excimer laser ablation threshold of polymers using a microphone

    Science.gov (United States)

    Krüger, Jörg; Niino, Hiroyuki; Yabe, Akira

    2002-09-01

    KrF excimer laser ablation of polyethylene terephthalate (PET), polyimide (PI) and polycarbonate (PC) in air was studied by an in situ monitoring technique using a microphone. The microphone signal generated by a short acoustic pulse represented the etch rate of laser ablation depending on the laser fluence, i.e., the ablation "strength". From a linear relationship between the microphone output voltage and the laser fluence, the single-pulse ablation thresholds were found to be 30 mJ cm -2 for PET, 37 mJ cm -2 for PI and 51 mJ cm -2 for PC (20-pulses threshold). The ablation thresholds of PET and PI were not influenced by the number of pulses per spot, while PC showed an incubation phenomenon. A microphone technique provides a simple method to determine the excimer laser ablation threshold of polymer films.

  10. Inverter-based circuit design techniques for low supply voltages

    CERN Document Server

    Palani, Rakesh Kumar

    2017-01-01

    This book describes intuitive analog design approaches using digital inverters, providing filter architectures and circuit techniques enabling high performance analog circuit design. The authors provide process, supply voltage and temperature (PVT) variation-tolerant design techniques for inverter based circuits. They also discuss various analog design techniques for lower technology nodes and lower power supply, which can be used for designing high performance systems-on-chip.    .

  11. Error Threshold for Spatially Resolved Evolution in the Quasispecies Model

    Energy Technology Data Exchange (ETDEWEB)

    Altmeyer, S.; McCaskill, J. S.

    2001-06-18

    The error threshold for quasispecies in 1, 2, 3, and {infinity} dimensions is investigated by stochastic simulation and analytically. The results show a monotonic decrease in the maximal sustainable error probability with decreasing diffusion coefficient, independently of the spatial dimension. It is thereby established that physical interactions between sequences are necessary in order for spatial effects to enhance the stabilization of biological information. The analytically tractable behavior in an {infinity} -dimensional (simplex) space provides a good guide to the spatial dependence of the error threshold in lower dimensional Euclidean space.

  12. Voltage-gated Proton Channels

    Science.gov (United States)

    DeCoursey, Thomas E.

    2014-01-01

    Voltage-gated proton channels, HV1, have vaulted from the realm of the esoteric into the forefront of a central question facing ion channel biophysicists, namely the mechanism by which voltage-dependent gating occurs. This transformation is the result of several factors. Identification of the gene in 2006 revealed that proton channels are homologues of the voltage-sensing domain of most other voltage-gated ion channels. Unique, or at least eccentric, properties of proton channels include dimeric architecture with dual conduction pathways, perfect proton selectivity, a single-channel conductance ~103 smaller than most ion channels, voltage-dependent gating that is strongly modulated by the pH gradient, ΔpH, and potent inhibition by Zn2+ (in many species) but an absence of other potent inhibitors. The recent identification of HV1 in three unicellular marine plankton species has dramatically expanded the phylogenetic family tree. Interest in proton channels in their own right has increased as important physiological roles have been identified in many cells. Proton channels trigger the bioluminescent flash of dinoflagellates, facilitate calcification by coccolithophores, regulate pH-dependent processes in eggs and sperm during fertilization, secrete acid to control the pH of airway fluids, facilitate histamine secretion by basophils, and play a signaling role in facilitating B-cell receptor mediated responses in B lymphocytes. The most elaborate and best-established functions occur in phagocytes, where proton channels optimize the activity of NADPH oxidase, an important producer of reactive oxygen species. Proton efflux mediated by HV1 balances the charge translocated across the membrane by electrons through NADPH oxidase, minimizes changes in cytoplasmic and phagosomal pH, limits osmotic swelling of the phagosome, and provides substrate H+ for the production of H2O2 and HOCl, reactive oxygen species crucial to killing pathogens. PMID:23798303

  13. Non-linear Membrane Properties in Entorhinal Cortical Stellate Cells Reduce Modulation of Input-Output Responses by Voltage Fluctuations.

    Science.gov (United States)

    Fernandez, Fernando R; Malerba, Paola; White, John A

    2015-04-01

    The presence of voltage fluctuations arising from synaptic activity is a critical component in models of gain control, neuronal output gating, and spike rate coding. The degree to which individual neuronal input-output functions are modulated by voltage fluctuations, however, is not well established across different cortical areas. Additionally, the extent and mechanisms of input-output modulation through fluctuations have been explored largely in simplified models of spike generation, and with limited consideration for the role of non-linear and voltage-dependent membrane properties. To address these issues, we studied fluctuation-based modulation of input-output responses in medial entorhinal cortical (MEC) stellate cells of rats, which express strong sub-threshold non-linear membrane properties. Using in vitro recordings, dynamic clamp and modeling, we show that the modulation of input-output responses by random voltage fluctuations in stellate cells is significantly limited. In stellate cells, a voltage-dependent increase in membrane resistance at sub-threshold voltages mediated by Na+ conductance activation limits the ability of fluctuations to elicit spikes. Similarly, in exponential leaky integrate-and-fire models using a shallow voltage-dependence for the exponential term that matches stellate cell membrane properties, a low degree of fluctuation-based modulation of input-output responses can be attained. These results demonstrate that fluctuation-based modulation of input-output responses is not a universal feature of neurons and can be significantly limited by subthreshold voltage-gated conductances.

  14. 40 CFR 98.361 - Reporting threshold.

    Science.gov (United States)

    2010-07-01

    ...) MANDATORY GREENHOUSE GAS REPORTING Manure Management § 98.361 Reporting threshold. Livestock facilities must report GHG emissions under this subpart if the facility meets the reporting threshold as defined in...

  15. A Voltage Controlled Oscillator using Ring Structure in CMOS Technology

    Directory of Open Access Journals (Sweden)

    Mrs. Devendra Rani

    2012-06-01

    Full Text Available Voltage-Controlled Ring Oscillators are crucial components in many wireless communication systems. The goal of this project is to design a high speed and lower power consumption, a voltage controlled oscillator (VCO, based on ring oscillators in 250nm CMOS technology, which provides a frequency of 2.4GHz. This CMOS based VCO is used for high speed wireless communication applications. A design of VCO includes delay cell, bias circuitry, and tuning circuitry using Tanner 13.0v software.

  16. Direct detection of the parametrically generated half-harmonic voltage in a Josephson tunnel junction

    DEFF Research Database (Denmark)

    Mygind, Jesper; Pedersen, Niels Falsig; Sørensen, O. H.

    1976-01-01

    The first direct observation of the parametrically generated half-harmonic voltage in a Josephson tunnel junction is reported. A microwave signal at f=17.25 GHz is applied to the junction dc current biased at zero voltage such that the Josephson plasma resonance fp=f/2. Under these conditions a l...... a large-amplitude microwave signal is emitted at fp provided the input power exceeds a threshold value. The results are compared to existing theory. Applied Physics Letters is copyrighted by The American Institute of Physics.......The first direct observation of the parametrically generated half-harmonic voltage in a Josephson tunnel junction is reported. A microwave signal at f=17.25 GHz is applied to the junction dc current biased at zero voltage such that the Josephson plasma resonance fp=f/2. Under these conditions...

  17. Piezoelectric transformers for low-voltage generation of gas discharges and ionic winds in atmospheric air

    Science.gov (United States)

    Johnson, Michael J.; Go, David B.

    2015-12-01

    To generate a gas discharge (plasma) in atmospheric air requires an electric field that exceeds the breakdown threshold of ˜30 kV/cm. Because of safety, size, or cost constraints, the large applied voltages required to generate such fields are often prohibitive for portable applications. In this work, piezoelectric transformers are used to amplify a low input applied voltage (corona-like discharges on its corners or on adjacent electrodes. In the proper configuration, these discharges can be used to generate a bulk air flow called an ionic wind. In this work, PT-driven discharges are characterized by measuring the discharge current and the velocity of the induced ionic wind with ionic winds generated using input voltages as low as 7 V. The characteristics of the discharge change as the input voltage increases; this modifies the resonance of the system and subsequent required operating parameters.

  18. A New Low Voltage P-MOS Bulk Driven Current Mirror Circuit

    Directory of Open Access Journals (Sweden)

    Anuj Dugaya

    2013-08-01

    Full Text Available This work proposes a new low voltage current mirror circuit using bulk driven technique. Bulk driven technique is used to reduce the threshold of PMOS u sed in low voltage current mirror circuits (LVCM.T he Proposed circuit consist of 4 PMOS and 5 NMOS. The proposed circuit operated at +0.85 V supply voltage.The bandwidth of this circuit has also been enhanced using resistive compensation technique. T he proposed circuit has been simulated in Cadence Desi gn Environment in UMC 180nm CMOS technology. A transfer characteristic of the proposed circuit has been discussed. The proposed circuit find applicat ion in low voltage and low power analog integrated circuit s.

  19. The world's first high voltage GaN-on-Diamond power semiconductor devices

    Science.gov (United States)

    Baltynov, Turar; Unni, Vineet; Narayanan, E. M. Sankara

    2016-11-01

    This paper presents the detailed fabrication method and extensive electrical characterisation results of the first-ever demonstrated high voltage GaN power semiconductor devices on CVD Diamond substrate. Fabricated circular GaN-on-Diamond HEMTs with gate-to-drain drift length of 17 μm and source field plate length of 3 μm show an off-state breakdown voltage of ∼1100 V. Temperature characterisation of capacitance-voltage characteristics and on-state characteristics provides insight on the temperature dependence of key parameters such as threshold voltage, 2DEG sheet carrier concentration, specific on-state resistance, and drain saturation current in the fabricated devices.

  20. Threshold Effects And Perturbative Unification

    CERN Document Server

    Bastero-Gil, M; Pérez-Mercader, J

    1995-01-01

    We discuss the effect of the renormalization procedure in the computation of the unification point for running coupling constants. We explore the effects of threshold--crossing on the $\\beta$--functions. We compute the running of the coupling constants of the Standard Model, between $m_Z$ and $M_P$, using a mass dependent subtraction procedure, and then compare the results with $\\bar{MS}$, and with the $\\theta$-- function approximation. We also do this for the Minimal Supersymmetric extension of the Standard Model. In the latter, the bounds on susy masses that one obtains by requiring perturbative unification are dependent, to some extent, on the procedure.

  1. Circular threshold quantum secret sharing

    Institute of Scientific and Technical Information of China (English)

    Yang Yu-Guang; Wen Qiao-Yan

    2008-01-01

    This paper proposes a circular threshold quantum secret sharing (TQSS) scheme with polarized single photons.A polarized single photon sequence runs circularly among any t or more of n parties and any t or more of n parties can reconstruct the secret key when they collaborate.It shows that entanglement is not necessary for quantum secret sharing.Moreover,the theoretic efficiency is improved to approach 100% as the single photons carrying the secret key are deterministically forwarded among any t or more of n parties,and each photon can carry one bit of information without quantum storage.This protocol is feasible with current technology.

  2. Congestion management considering voltage security of power systems

    Energy Technology Data Exchange (ETDEWEB)

    Esmaili, Masoud; Shayanfar, Heidar Ali [Centre of Excellence for Power System Automation and Operation, Iran Univ. of Science and Technology, Tehran (Iran); Amjady, Nima [Dept. of Electrical Engineering, Semnan Univ., Semnan (Iran)

    2009-10-15

    Congestion in a power network is turned up due to system operating limits. To relieve congestion in a deregulated power market, the system operator pays to market participants, GENCOs and DISCOs, to alter their active powers considering their bids. After performing congestion management, the network may be operated with a low security level because of hitting some flows their upper limit and some voltages their lower limit. In this paper, a novel congestion management method based on the voltage stability margin sensitivities is introduced. Using the proposed method, the system operator so alleviates the congestion that the network can more retain its security. The proposed method not only makes the system more secure after congestion management than other methods already presented for this purpose but also its cost of providing security is lower than the earlier methods. Test results of the proposed method along with the earlier ones on the New-England test system elaborate the efficiency of the proposed method from the viewpoint of providing a better voltage stability margin and voltage profile as well as a lower security cost. (author)

  3. Ultra-low-voltage-trigger thyristor for on-chip ESD protection without extra process cost

    Science.gov (United States)

    Yi, Shan; Jun, He; Wenyi, Huang

    2009-07-01

    A new thyristor is proposed and realized in the foundry's 0.18-μm CMOS process for electrostatic discharge (ESD) protection. Without extra mask layers or process steps, the new ultra-low-voltage-trigger thyristor (ULVT thyristor) has a trigger voltage as low as 6.7 V and an ESD robustness exceeding 50 mA/μm, which enables effective ESD protection. Compared with the traditional medium-voltage-trigger thyristor (MVT thyristor), the new structure not only has a lower trigger voltage, but can also provide better ESD protection under both positive and negative ESD zapping conditions.

  4. Ultra-low-voltage-trigger thyristor for on-chip ESD protection without extra process cost

    Energy Technology Data Exchange (ETDEWEB)

    Shan Yi [Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); He Jun; Huang Wenyi, E-mail: iamshanyi@163.co, E-mail: yi.shan@gracesemi.co [Grace Semiconductor Manufacturing Corporation, Shanghai 201203 (China)

    2009-07-15

    A new thyristor is proposed and realized in the foundry's 0.18-{mu}m CMOS process for electrostatic discharge (ESD) protection. Without extra mask layers or process steps, the new ultra-low-voltage-trigger thyristor (ULVT thyristor) has a trigger voltage as low as 6.7 V and an ESD robustness exceeding 50 mA/{mu}m, which enables effective ESD protection. Compared with the traditional medium-voltage-trigger thyristor (MVT thyristor), the new structure not only has a lower trigger voltage, but can also provide better ESD protection under both positive and negative ESD zapping conditions.

  5. BEHAVIOUR OF BACKFILL MATERIALS FOR ELECTRICAL GROUNDING SYSTEMS UNDER HIGH VOLTAGE CONDITIONS

    Directory of Open Access Journals (Sweden)

    S. C. LIM

    2015-06-01

    Full Text Available Backfill materials like Bentonite and cement are effective in lowering grounding resistance of electrodes for a considerable period. During lightning, switching impulses and earth fault occurrences in medium and high voltage networks, the grounding system needs to handle extremely high currents either for a short duration or prolonged period respectively. This paper investigates the behaviour of bentonite, cement and sand under impulse and alternating high voltage (50Hz conditions. Fulguritic-formation was observed in all materials under alternating high voltage. The findings reveal that performance of grounding systems under high voltage conditions may significantly change from the outcomes anticipated at design stage.

  6. Pain threshold - measure of pain sensitivity or social behavior?

    Directory of Open Access Journals (Sweden)

    Modić-Stanke Koraljka

    2016-01-01

    Full Text Available The aim was to examine the effect of the experimenter’s social status and its interaction with participant’s gender on pressure pain threshold. Both male and female students participated in the study (N = 96 and were evenly assigned into two groups which differed only in the professional status of the experimenter who was a professor (higher status in one group and a student (lower status in the other. The factorial ANOVA revealed statistically significant and large main effects of the experimenter’s status and the participants’ gender, indicating higher pain thresholds in male participants and in the higher status experimenter group. Although both males and females had higher pain thresholds when measured by a higher status experimenter, a statistically significant interaction revealed that status affected male participants more so than females. The obtained results are probably due to social behaviour, emphasizing relevance of the experimenter’s and participants’ characteristics in pain measurement.

  7. Estimating the epidemic threshold on networks by deterministic connections

    Energy Technology Data Exchange (ETDEWEB)

    Li, Kezan, E-mail: lkzzr@sohu.com; Zhu, Guanghu [School of Mathematics and Computing Science, Guilin University of Electronic Technology, Guilin 541004 (China); Fu, Xinchu [Department of Mathematics, Shanghai University, Shanghai 200444 (China); Small, Michael [School of Mathematics and Statistics, The University of Western Australia, Crawley, Western Australia 6009 (Australia)

    2014-12-15

    For many epidemic networks some connections between nodes are treated as deterministic, while the remainder are random and have different connection probabilities. By applying spectral analysis to several constructed models, we find that one can estimate the epidemic thresholds of these networks by investigating information from only the deterministic connections. Nonetheless, in these models, generic nonuniform stochastic connections and heterogeneous community structure are also considered. The estimation of epidemic thresholds is achieved via inequalities with upper and lower bounds, which are found to be in very good agreement with numerical simulations. Since these deterministic connections are easier to detect than those stochastic connections, this work provides a feasible and effective method to estimate the epidemic thresholds in real epidemic networks.

  8. The neutrino floor at ultra-low threshold

    CERN Document Server

    Strigari, Louis E

    2016-01-01

    By lowering their energy threshold direct dark matter searches can reach the neutrino floor with experimental technology now in development. The 7Be flux can be detected with $\\sim 10$ eV nuclear recoil energy threshold and 50 kg-yr exposure. The pep flux can be detected with $\\sim 3$ ton-yr exposure, and the first detection of the CNO flux is possible with similar exposure. The pp flux can be detected with threshold of $\\sim$ eV and only $\\sim$ kg-yr exposure. These can be the first pure neutral current measurements of the low-energy solar neutrino flux. Measuring this flux is important for low mass dark matter searches and for understanding the solar interior.

  9. Magnetic contrast in threshold photoemission electron microscopy

    NARCIS (Netherlands)

    Veghel, Marinus Godefridus Adrianus van

    2004-01-01

    In threshold photoemission electron microscopy (threshold PEEM), photoelectrons are excited by UV photons with an energy just above the photoemission threshold. The lateral intensity distribution of these electrons is then imaged by an electrostatic lens system. In this thesis, the possibilities o

  10. Threshold Concepts in Finance: Student Perspectives

    Science.gov (United States)

    Hoadley, Susan; Kyng, Tim; Tickle, Leonie; Wood, Leigh N.

    2015-01-01

    Finance threshold concepts are the essential conceptual knowledge that underpin well-developed financial capabilities and are central to the mastery of finance. In this paper we investigate threshold concepts in finance from the point of view of students, by establishing the extent to which students are aware of threshold concepts identified by…

  11. Threshold Concepts in Finance: Student Perspectives

    Science.gov (United States)

    Hoadley, Susan; Kyng, Tim; Tickle, Leonie; Wood, Leigh N.

    2015-01-01

    Finance threshold concepts are the essential conceptual knowledge that underpin well-developed financial capabilities and are central to the mastery of finance. In this paper we investigate threshold concepts in finance from the point of view of students, by establishing the extent to which students are aware of threshold concepts identified by…

  12. Atrial and ventricular stimulation threshold development: a comparative study in patients with a DDD pacemaker and two identical carbon-tip leads.

    Science.gov (United States)

    Brandt, J; Attewell, R; Fåhraeus, T; Schüller, H

    1990-07-01

    The atrial and ventricular pacing threshold development during the first postoperative year was studied in a group of patients receiving DDD pacemakers. Identical carbon-tip endocardial leads were implanted in atrium and ventricle. Atrial and ventricular voltage stimulation thresholds were measured at implantation, and noninvasively at 1 and 12 months thereafter. The atrial amplifier sensitivity required for adequate P wave sensing during follow-up was also determined. The possible influence of a number of factors upon atrial and ventricular threshold evolution was statistically assessed. The threshold data were complete in 57 patients (mean age +/- SD, 65.2 +/- 12.4 years). Thirteen patients had a diagnosis of sinus node disease, whereas 44 had not. Patient age and diagnosis did not significantly influence atrial or ventricular stimulation threshold development. Atrial sensing thresholds were not related to atrial stimulation thresholds during follow-up. Atrial pacing thresholds were higher than ventricular thresholds at pacemaker implantation (P less than 0.00005), but the postoperative threshold rise and thresholds at 1 and 12 months postoperatively did not differ significantly between the atrium and ventricle. The ratio of chronic to acute stimulation thresholds was higher on the ventricular than on the atrial level (0.001 greater than P greater than 0.0005). The chronic atrial threshold showed a logarithmic relation to the threshold at implantation (P = 0.0006); postoperative threshold rise was not a significant determinant of the chronic atrial threshold (P = NS). On the ventricular level, the reverse was seen: The chronic threshold was related to the postoperative threshold rise (P = 0.0015, logarithmic relation), but not to the implantation threshold (P = NS).(ABSTRACT TRUNCATED AT 250 WORDS)

  13. On Possible Arc Inception on Low Voltage Solar Array

    Science.gov (United States)

    Vayner, Boris

    2015-01-01

    Recent analysis of spacecraft failures during the period of 1990-2013 demonstrated clearly that electrostatic discharges caused more than 8 percent of all registered failures and anomalies, and comprised the most costly losses (25 percent) for operating companies and agencies. The electrostatic discharges on spacecraft surfaces are the results of differential charging above some critical (threshold) voltages. The mechanisms of differential charging are well known, and various methods have been developed to prevent a generation of significant electric fields in areas of triple junctions. For example, low bus voltages in Low Earth Orbit plasma environment and slightly conducting layer over cover-glass (ITO) in Geosynchronous Orbit surroundings are believed to be quite reliable measures to prevent discharges on respective surfaces. In most cases, the vulnerable elements of spacecraft (solar arrays, diode boards, etc.) go through comprehensive ground tests in vacuum chambers. However, tests articles contain the miniscule fragments of spacecraft components such as 10-30 solar cells of many thousands deployed on spacecraft in orbit. This is one reason why manufacturing defects may not be revealed in ground tests but expose themselves in arcing on array surface in space. The other reason for ineffectiveness of discharge preventive measures is aging of all materials in harsh orbital environments. The expected life time of modern spacecraft varies within the range of five-fifteen years, and thermal cycling, radiation damages, and mechanical stresses can result in surface erosion on conductive layers and microscopic cracks in cover-glass sheets and adhesive films. These possible damages may cause significant increases in local electric field strengths and subsequent discharges. The primary discharges may or may not be detrimental to spacecraft operation, but they can produce the necessary conditions for sustained arcs initiation. Multiple measures were developed to prevent

  14. Threshold temperature optical fibre sensors

    Science.gov (United States)

    Stasiewicz, K. A.; Musial, J. E.

    2016-12-01

    This paper presents a new approach to manufacture a threshold temperature sensor based on a biconical optical fibre taper. The presented sensor employs the influence of variable state of concentration of some isotropic materials like wax or paraffin. Application of the above- mentioned materials is an attempt to prove that there is a possibility to obtain a low-cost, repeatable and smart sensor working as an in-line element. Optical fibre taper was obtained from a standard single mode fibre (SMF28®) by using a low pressure gas burner technique. The diameter of the manufactured tapers was 6.0 ± 0.5 μm with the length of elongation equal to 30.50 ± 0.16 mm. The applied technology allowed to produce tapers with the losses of 0.183 ± 0.015 dB. Application of materials with different temperature transition points made it possible to obtain the threshold work at the temperatures connected directly with their conversion temperature. External materials at the temperatures above their melting points do not influence the propagation losses. For each of them two types of the protection area and position of the optical fibre taper were applied.

  15. Anisotropy in finite continuum percolation: threshold estimation by Minkowski functionals

    Science.gov (United States)

    Klatt, Michael A.; Schröder-Turk, Gerd E.; Mecke, Klaus

    2017-02-01

    We examine the interplay between anisotropy and percolation, i.e. the spontaneous formation of a system spanning cluster in an anisotropic model. We simulate an extension of a benchmark model of continuum percolation, the Boolean model, which is formed by overlapping grains. Here we introduce an orientation bias of the grains that controls the degree of anisotropy of the generated patterns. We analyze in the Euclidean plane the percolation thresholds above which percolating clusters in x- and in y-direction emerge. Only in finite systems, distinct differences between effective percolation thresholds for different directions appear. If extrapolated to infinite system sizes, these differences vanish independent of the details of the model. In the infinite system, the uniqueness of the percolating cluster guarantees a unique percolation threshold. While percolation is isotropic even for anisotropic processes, the value of the percolation threshold depends on the model parameters, which we explore by simulating a score of models with varying degree of anisotropy. To which precision can we predict the percolation threshold without simulations? We discuss analytic formulas for approximations (based on the excluded area or the Euler characteristic) and compare them to our simulation results. Empirical parameters from similar systems allow for accurate predictions of the percolation thresholds (with deviations of  integral geometry provide, at least for the systems studied here, lower bounds that capture well the qualitative dependence of the percolation threshold on the system parameters (with deviations of 5 % –30 % ). As an outlook, we suggest further candidates for explicit and geometric approximations based on second moments of the so-called Minkowski functionals.

  16. Mechanical threshold as a factor in excitation-contraction coupling.

    Science.gov (United States)

    Taylor, S R; Preiser, H; Sandow, A

    1969-09-01

    I(-), CH(3)SO(4) (-), and ClO(4) (-), like other previously studied type A twitch potentiators (Br(-), NO(3) (-), SCN(-), and caffeine), lower the mechanical threshold in K depolarization contractures of frog skeletal muscle. In potentiated twitches, I(-), Br(-), CH(3)SO(4) (-), ClO(4), and SCN, as already reported for NO(3) (-) and caffeine, slightly shorten the latent period (L) and considerably increase the rate of tension development (dP/dt) during the first few milliseconds of the contraction period. Divalent cations (8 mM Ca(2+), 0.5-1.0 mM Zn(2+) and Cd(2+)) raise the mechanical threshold of contractures, and correspondingly affect the twitch by depressing the tension output, increasing L, and decreasing the early dP/dt, thus acting oppositely to the type A potentiators. These various results form a broad, consistent pattern indicating that electromechanical coupling in the twitch is conditioned by a mechanical threshold as it is in the contracture, and suggesting that the lower the threshold, in reference to the raised threshold under the action of the divalent cations, the more effective is a given action potential in activating the twitch as regards especially both its early rate and peak magnitude of tension development. The results suggest that the direct action by which the various agents affect the level of the mechanical threshold involves effects on E-C coupling processes of the T tubular and/or the sarcoplasmic reticulum which control the release of Ca for activating contraction.

  17. Advances in high voltage engineering

    CERN Document Server

    Haddad, A

    2005-01-01

    This book addresses the very latest research and development issues in high voltage technology and is intended as a reference source for researchers and students in the field, specifically covering developments throughout the past decade. This unique blend of expert authors and comprehensive subject coverage means that this book is ideally suited as a reference source for engineers and academics in the field for years to come.

  18. TRANSISTOR HIGH VOLTAGE POWER SUPPLY

    Science.gov (United States)

    Driver, G.E.

    1958-07-15

    High voltage, direct current power supplies are described for use with battery powered nuclear detection equipment. The particular advantages of the power supply described, are increased efficiency and reduced size and welght brought about by the use of transistors in the circuit. An important feature resides tn the employment of a pair of transistors in an alternatefiring oscillator circuit having a coupling transformer and other circuit components which are used for interconnecting the various electrodes of the transistors.

  19. Hard decoding algorithm for optimizing thresholds under general Markovian noise

    Science.gov (United States)

    Chamberland, Christopher; Wallman, Joel; Beale, Stefanie; Laflamme, Raymond

    2017-04-01

    Quantum error correction is instrumental in protecting quantum systems from noise in quantum computing and communication settings. Pauli channels can be efficiently simulated and threshold values for Pauli error rates under a variety of error-correcting codes have been obtained. However, realistic quantum systems can undergo noise processes that differ significantly from Pauli noise. In this paper, we present an efficient hard decoding algorithm for optimizing thresholds and lowering failure rates of an error-correcting code under general completely positive and trace-preserving (i.e., Markovian) noise. We use our hard decoding algorithm to study the performance of several error-correcting codes under various non-Pauli noise models by computing threshold values and failure rates for these codes. We compare the performance of our hard decoding algorithm to decoders optimized for depolarizing noise and show improvements in thresholds and reductions in failure rates by several orders of magnitude. Our hard decoding algorithm can also be adapted to take advantage of a code's non-Pauli transversal gates to further suppress noise. For example, we show that using the transversal gates of the 5-qubit code allows arbitrary rotations around certain axes to be perfectly corrected. Furthermore, we show that Pauli twirling can increase or decrease the threshold depending upon the code properties. Lastly, we show that even if the physical noise model differs slightly from the hypothesized noise model used to determine an optimized decoder, failure rates can still be reduced by applying our hard decoding algorithm.

  20. On the Threshold of Maximum-Distance Separable Codes

    CERN Document Server

    Kindarji, Bruno; Chabanne, Hervé

    2010-01-01

    Starting from a practical use of Reed-Solomon codes in a cryptographic scheme published in Indocrypt'09, this paper deals with the threshold of linear $q$-ary error-correcting codes. The security of this scheme is based on the intractability of polynomial reconstruction when there is too much noise in the vector. Our approach switches from this paradigm to an Information Theoretical point of view: is there a class of elements that are so far away from the code that the list size is always superpolynomial? Or, dually speaking, is Maximum-Likelihood decoding almost surely impossible? We relate this issue to the decoding threshold of a code, and show that when the minimal distance of the code is high enough, the threshold effect is very sharp. In a second part, we explicit lower-bounds on the threshold of Maximum-Distance Separable codes such as Reed-Solomon codes, and compute the threshold for the toy example that motivates this study.

  1. Thresholds for color discrimination in English and Korean speakers.

    Science.gov (United States)

    Roberson, Debi; Hanley, J Richard; Pak, Hyensou

    2009-09-01

    Categorical perception (CP) is said to occur when a continuum of equally spaced physical changes is perceived as unequally spaced as a function of category membership (Harnad, S. (Ed.) (1987). Psychophysical and cognitive aspects of categorical perception: A critical overview. Cambridge: Cambridge University Press). A common suggestion is that CP for color arises because perception is qualitatively distorted when we learn to categorize a dimension. Contrary to this view, we here report that English speakers show no evidence of lowered discrimination thresholds at the boundaries between blue and green categories even though CP is found at these boundaries in a supra-threshold task. Furthermore, there is no evidence of different discrimination thresholds between individuals from two language groups (English and Korean) who use different color terminology in the blue-green region and have different supra-threshold boundaries. Our participants' just noticeable difference (JND) thresholds suggest that they retain a smooth continuum of perceptual space that is not warped by stretching at category boundaries or by within-category compression. At least for the domain of color, categorical perception appears to be a categorical, but not a perceptual phenomenon.

  2. Input-output relation and energy efficiency in the neuron with different spike threshold dynamics.

    Science.gov (United States)

    Yi, Guo-Sheng; Wang, Jiang; Tsang, Kai-Ming; Wei, Xi-Le; Deng, Bin

    2015-01-01

    Neuron encodes and transmits information through generating sequences of output spikes, which is a high energy-consuming process. The spike is initiated when membrane depolarization reaches a threshold voltage. In many neurons, threshold is dynamic and depends on the rate of membrane depolarization (dV/dt) preceding a spike. Identifying the metabolic energy involved in neural coding and their relationship to threshold dynamic is critical to understanding neuronal function and evolution. Here, we use a modified Morris-Lecar model to investigate neuronal input-output property and energy efficiency associated with different spike threshold dynamics. We find that the neurons with dynamic threshold sensitive to dV/dt generate discontinuous frequency-current curve and type II phase response curve (PRC) through Hopf bifurcation, and weak noise could prohibit spiking when bifurcation just occurs. The threshold that is insensitive to dV/dt, instead, results in a continuous frequency-current curve, a type I PRC and a saddle-node on invariant circle bifurcation, and simultaneously weak noise cannot inhibit spiking. It is also shown that the bifurcation, frequency-current curve and PRC type associated with different threshold dynamics arise from the distinct subthreshold interactions of membrane currents. Further, we observe that the energy consumption of the neuron is related to its firing characteristics. The depolarization of spike threshold improves neuronal energy efficiency by reducing the overlap of Na(+) and K(+) currents during an action potential. The high energy efficiency is achieved at more depolarized spike threshold and high stimulus current. These results provide a fundamental biophysical connection that links spike threshold dynamics, input-output relation, energetics and spike initiation, which could contribute to uncover neural encoding mechanism.

  3. Lower treatment targets for gestational diabetes: is lower really better?

    Science.gov (United States)

    Kevat, Dev A S; Sinha, Ashim K; McLean, Anna G

    2014-08-18

    Proposed lower diagnostic thresholds and lower treatment targets for gestational diabetes have been controversial internationally. Intervention trials for the recently revised lower Australian treatment targets are currently lacking. While there may be benefits, lowering treatment targets may cause a number of harms including increased risk of hypoglycaemia in pregnant women, greater medicolegal risk for health practitioners, and heavier economic costs for the health system. Regional and remote care providers in particular will have greater costs, and may be overwhelmed in attempts to implement new treatment targets. An excessively glucose-centric focus may divert attention and resources from identifying and addressing other important and growing contributors to adverse pregnancy outcomes, such as obesity. Important groups such as Aboriginal and Torres Strait Islander Australians may not gain overall benefit from lowering treatment targets for gestational diabetes because of current low birthweights and the effect of social costs. It has not yet been established whether implementing lower treatment targets for gestational diabetes will create more benefit than harm. Implementation at this stage is premature.

  4. Low voltage electron beam accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Ochi, Masafumi [Iwasaki Electric Co., Ltd., Tokyo (Japan)

    2003-02-01

    Widely used electron accelerators in industries are the electron beams with acceleration voltage at 300 kV or less. The typical examples are shown on manufactures in Japan, equipment configuration, operation, determination of process parameters, and basic maintenance requirement of the electron beam processors. New electron beam processors with acceleration voltage around 100 kV were introduced maintaining the relatively high dose speed capability of around 10,000 kGy x mpm at production by ESI (Energy Science Inc. USA, Iwasaki Electric Group). The application field like printing and coating for packaging requires treating thickness of 30 micron or less. It does not require high voltage over 110 kV. Also recently developed is a miniature bulb type electron beam tube with energy less than 60 kV. The new application area for this new electron beam tube is being searched. The drive force of this technology to spread in the industries would be further development of new application, process and market as well as the price reduction of the equipment, upon which further acknowledgement and acceptance of the technology to societies and industries would entirely depend. (Y. Tanaka)

  5. The non-destructive threshold of the graphite surface by STM in the ultra-fast pulse mode

    Institute of Scientific and Technical Information of China (English)

    Xu Chun-Kai; Wei Zheng; Chen Xiang-Jun; Xu Ke-Zun

    2007-01-01

    In this paper single ultra-fast voltage pulses are introduced to the Pt/Ir tip of a scanning tunnelling microscope (STM),and the non-destructive threshold of the graphite surface is studied systematically in a wide range of pulse durations(from 104 to 8 ns).Considering the waveform distortion of the pulses at the tunnelling region,this paper gives the corrected threshold curve of pulse amplitude depending on pulse duration.A new explanation of threshold power has been suggested and fits the experimental results well.

  6. Piezoelectric transformers for low-voltage generation of gas discharges and ionic winds in atmospheric air

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Michael J. [Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indianapolis 46556 (United States); Go, David B., E-mail: dgo@nd.edu [Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indianapolis 46556 (United States); Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, Indianapolis 46556 (United States)

    2015-12-28

    To generate a gas discharge (plasma) in atmospheric air requires an electric field that exceeds the breakdown threshold of ∼30 kV/cm. Because of safety, size, or cost constraints, the large applied voltages required to generate such fields are often prohibitive for portable applications. In this work, piezoelectric transformers are used to amplify a low input applied voltage (<30 V) to generate breakdown in air without the need for conventional high-voltage electrical equipment. Piezoelectric transformers (PTs) use their inherent electromechanical resonance to produce a voltage amplification, such that the surface of the piezoelectric exhibits a large surface voltage that can generate corona-like discharges on its corners or on adjacent electrodes. In the proper configuration, these discharges can be used to generate a bulk air flow called an ionic wind. In this work, PT-driven discharges are characterized by measuring the discharge current and the velocity of the induced ionic wind with ionic winds generated using input voltages as low as 7 V. The characteristics of the discharge change as the input voltage increases; this modifies the resonance of the system and subsequent required operating parameters.

  7. Piezo Voltage Controlled Planar Hall Effect Devices

    OpenAIRE

    Bao Zhang; Kang-Kang Meng; Mei-Yin Yang; Edmonds, K. W.; Hao Zhang; Kai-Ming Cai; Yu Sheng; Nan Zhang; Yang Ji; Jian-Hua Zhao; Hou-Zhi Zheng; Kai-You Wang

    2015-01-01

    The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the pie...

  8. Arcing and discharges in high-voltage subsystems of Space Station

    Science.gov (United States)

    Singh, N.

    1988-01-01

    Arcing and other types of electrical discharges are likely to occur in high-voltage subsystems of the Space Station. Results from ground and space experiments on the arcing of solar cell arrays are briefly reviewed, showing that the arcing occurs when the conducting interconnects in the arrays are at negative potential above a threshold, which decreases with the increasing plasma density. Furthermore, above the threshold voltages the arcing rate increases with the plasma density. At the expected operating voltages (approximately 200 V) in the solar array for the space station, arcing is expected to occur even in the ambient ionospheric plasma. If the ionization of the contaminants increases the plasma density near the high-voltage systems, the adverse effects of arcing on the solar arrays and the space station are likely to be enhanced, In addition to arcing other discharge processes are likely to occur in high-voltage subsystems. For example, Paschen discharge is likely to occur when the neutral density N sub n greater that 10 to the 12th cu cm, the corresponding neutral pressure P greater than 3 x 10 to the -5 Torr.

  9. A Sub Threshold Source Coupled Logic Based Design of Low Power CMOS Analog Multiplexer

    Directory of Open Access Journals (Sweden)

    G.Deepika

    2014-11-01

    Full Text Available A novel approach for designing Ultra Low Power and wide dynamic range circuit for multiplexing analog signals is presented. The design operates in weak inversion (Sub threshold region and uses Source - Coupled Logic ( SCL circuit. The bias current of the SCL gates is varied to scale down linearly the power consumption and the operating frequency. The multiplexer design employs CMOS transistors as transmission gate with dynamic threshold voltage. The design exhibits low power dissipation, high dynamic range and good linearity. The design was implemented in 180 nm technology and was operated at a supply voltage of 400 mV with a bias current ranging in the order of few Pico-amperes. The ON and OFF resistance of the transmission gate achieved were 27 ohms and 10 M ohms respectively. The power dissipation achieved is around 0.79 µW for a dynamic range of 1µV to 0.4 V.

  10. 49 CFR 234.221 - Lamp voltage.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Lamp voltage. 234.221 Section 234.221 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION..., Inspection, and Testing Maintenance Standards § 234.221 Lamp voltage. The voltage at each lamp shall...

  11. Bootstrapped Low-Voltage Analog Switches

    DEFF Research Database (Denmark)

    Steensgaard-Madsen, Jesper

    1999-01-01

    Novel low-voltage constant-impedance analog switch circuits are proposed. The switch element is a single MOSFET, and constant-impedance operation is obtained using simple circuits to adjust the gate and bulk voltages relative to the switched signal. Low-voltage (1-volt) operation is made feasible...

  12. Orientability thresholds for random hypergraphs

    CERN Document Server

    Gao, Pu

    2010-01-01

    Let $h>w>0$ be two fixed integers. Let $\\orH$ be a random hypergraph whose hyperedges are all of cardinality $h$. To {\\em $w$-orient} a hyperedge, we assign exactly $w$ of its vertices positive signs with respect to the hyperedge, and the rest negative. A $(w,k)$-orientation of $\\orH$ consists of a $w$-orientation of all hyperedges of $\\orH$, such that each vertex receives at most $k$ positive signs from its incident hyperedges. When $k$ is large enough, we determine the threshold of the existence of a $(w,k)$-orientation of a random hypergraph. The $(w,k)$-orientation of hypergraphs is strongly related to a general version of the off-line load balancing problem. The graph case, when $h=2$ and $w=1$, was solved recently by Cain, Sanders and Wormald and independently by Fernholz and Ramachandran, which settled a conjecture of Karp and Saks.

  13. Connectivity threshold for Bluetooth graphs

    CERN Document Server

    Broutin, Nicolas; Fraiman, Nicolas; Lugosi, Gábor

    2011-01-01

    We study the connectivity properties of random Bluetooth graphs that model certain "ad hoc" wireless networks. The graphs are obtained as "irrigation subgraphs" of the well-known random geometric graph model. There are two parameters that control the model: the radius $r$ that determines the "visible neighbors" of each node and the number of edges $c$ that each node is allowed to send to these. The randomness comes from the underlying distribution of data points in space and from the choices of each vertex. We prove that no connectivity can take place with high probability for a range of parameters $r, c$ and completely characterize the connectivity threshold (in $c$) for values of $r$ close the critical value for connectivity in the underlying random geometric graph.

  14. Sesame allergy threshold dose distribution.

    Science.gov (United States)

    Dano, D; Remington, B C; Astier, C; Baumert, J L; Kruizinga, A G; Bihain, B E; Taylor, S L; Kanny, G

    2015-09-01

    Sesame is a relevant food allergen in France. Compared to other allergens there is a lack of food challenge data and more data could help sesame allergy risk management. The aim of this study is to collect more sesame challenge data and investigate the most efficient food challenge method for future studies. Records of patients at University Hospital in Nancy (France) with objective symptoms to sesame challenges were collected and combined with previously published data. An estimation of the sesame allergy population threshold was calculated based on individual NOAELs and LOAELs. Clinical dosing schemes at Nancy were investigated to see if the optimal protocol for sesame is currently used. Fourteen patients (10 M/4 F, 22 ± 14.85 years old) with objective symptoms were added to previously published data making a total of 35 sesame allergic patients. The most sensitive patient reacted to the first dose at challenge of 1.02 mg sesame protein. The ED05 ranges between 1.2 and 4.0 mg of sesame protein (Log-Normal, Log-Logistic, and Weibull models) and the ED10 between 4.2 and 6.2 mg. The optimal food challenge dosing scheme for sesame follows semi-log dose increases from 0.3 to 3000 mg protein. This article provides a valuable update to the existing clinical literature regarding sesame NOAELs and LOAELs. Establishment of a population threshold for sesame could help in increasing the credibility of precautionary labelling and decrease the costs associated with unexpected allergic reactions. Also, the use of an optimal dosing scheme would decrease time spent on diagnostic and thereafter on the economic burden of sesame allergy diagnosis. Copyright © 2015 Elsevier Ltd. All rights reserved.

  15. Calculation Model for Current-voltage Relation of Silicon Quantum-dots-based Nano-memory

    Institute of Scientific and Technical Information of China (English)

    YANG Hong-guan; DAI Da-kang; YU Biao; SHANG Lin-lin; GUO You-hong

    2007-01-01

    Based on the capacitive coupling formalism, an analytic model for calculating the drain currents of the quantum-dots floating-gate memory cell is proposed. Using this model, one can calculate numerically the drain currents of linear, saturation and subthreshold regions of the device with/without charges stored on the floating dots. The read operation process of an n-channel Si quantum-dots floating-gate nano-memory cell is discussed after calculating the drain currents versus the drain to source voltages and control gate voltages in both high and low threshold states respectively.

  16. Effect of Canagliflozin on Renal Threshold for Glucose, Glycemia, and Body Weight in Normal and Diabetic Animal Models

    Science.gov (United States)

    Liang, Yin; Arakawa, Kenji; Ueta, Kiichiro; Matsushita, Yasuaki; Kuriyama, Chiaki; Martin, Tonya; Du, Fuyong; Liu, Yi; Xu, June; Conway, Bruce; Conway, Jamie; Polidori, David; Ways, Kirk; Demarest, Keith

    2012-01-01

    Background Canagliflozin is a sodium glucose co-transporter (SGLT) 2 inhibitor in clinical development for the treatment of type 2 diabetes mellitus (T2DM). Methods 14C-alpha-methylglucoside uptake in Chinese hamster ovary-K cells expressing human, rat, or mouse SGLT2 or SGLT1; 3H-2-deoxy-d-glucose uptake in L6 myoblasts; and 2-electrode voltage clamp recording of oocytes expressing human SGLT3 were analyzed. Graded glucose infusions were performed to determine rate of urinary glucose excretion (UGE) at different blood glucose (BG) concentrations and the renal threshold for glucose excretion (RTG) in vehicle or canagliflozin-treated Zucker diabetic fatty (ZDF) rats. This study aimed to characterize the pharmacodynamic effects of canagliflozin in vitro and in preclinical models of T2DM and obesity. Results Treatment with canagliflozin 1 mg/kg lowered RTG from 415±12 mg/dl to 94±10 mg/dl in ZDF rats while maintaining a threshold relationship between BG and UGE with virtually no UGE observed when BG was below RTG. Canagliflozin dose-dependently decreased BG concentrations in db/db mice treated acutely. In ZDF rats treated for 4 weeks, canagliflozin decreased glycated hemoglobin (HbA1c) and improved measures of insulin secretion. In obese animal models, canagliflozin increased UGE and decreased BG, body weight gain, epididymal fat, liver weight, and the respiratory exchange ratio. Conclusions Canagliflozin lowered RTG and increased UGE, improved glycemic control and beta-cell function in rodent models of T2DM, and reduced body weight gain in rodent models of obesity. PMID:22355316

  17. Effect of canagliflozin on renal threshold for glucose, glycemia, and body weight in normal and diabetic animal models.

    Directory of Open Access Journals (Sweden)

    Yin Liang

    Full Text Available BACKGROUND: Canagliflozin is a sodium glucose co-transporter (SGLT 2 inhibitor in clinical development for the treatment of type 2 diabetes mellitus (T2DM. METHODS: (14C-alpha-methylglucoside uptake in Chinese hamster ovary-K cells expressing human, rat, or mouse SGLT2 or SGLT1; (3H-2-deoxy-d-glucose uptake in L6 myoblasts; and 2-electrode voltage clamp recording of oocytes expressing human SGLT3 were analyzed. Graded glucose infusions were performed to determine rate of urinary glucose excretion (UGE at different blood glucose (BG concentrations and the renal threshold for glucose excretion (RT(G in vehicle or canagliflozin-treated Zucker diabetic fatty (ZDF rats. This study aimed to characterize the pharmacodynamic effects of canagliflozin in vitro and in preclinical models of T2DM and obesity. RESULTS: Treatment with canagliflozin 1 mg/kg lowered RT(G from 415±12 mg/dl to 94±10 mg/dl in ZDF rats while maintaining a threshold relationship between BG and UGE with virtually no UGE observed when BG was below RT(G. Canagliflozin dose-dependently decreased BG concentrations in db/db mice treated acutely. In ZDF rats treated for 4 weeks, canagliflozin decreased glycated hemoglobin (HbA1c and improved measures of insulin secretion. In obese animal models, canagliflozin increased UGE and decreased BG, body weight gain, epididymal fat, liver weight, and the respiratory exchange ratio. CONCLUSIONS: Canagliflozin lowered RT(G and increased UGE, improved glycemic control and beta-cell function in rodent models of T2DM, and reduced body weight gain in rodent models of obesity.

  18. Effect of canagliflozin on renal threshold for glucose, glycemia, and body weight in normal and diabetic animal models.

    Science.gov (United States)

    Liang, Yin; Arakawa, Kenji; Ueta, Kiichiro; Matsushita, Yasuaki; Kuriyama, Chiaki; Martin, Tonya; Du, Fuyong; Liu, Yi; Xu, June; Conway, Bruce; Conway, Jamie; Polidori, David; Ways, Kirk; Demarest, Keith

    2012-01-01

    Canagliflozin is a sodium glucose co-transporter (SGLT) 2 inhibitor in clinical development for the treatment of type 2 diabetes mellitus (T2DM). (14)C-alpha-methylglucoside uptake in Chinese hamster ovary-K cells expressing human, rat, or mouse SGLT2 or SGLT1; (3)H-2-deoxy-d-glucose uptake in L6 myoblasts; and 2-electrode voltage clamp recording of oocytes expressing human SGLT3 were analyzed. Graded glucose infusions were performed to determine rate of urinary glucose excretion (UGE) at different blood glucose (BG) concentrations and the renal threshold for glucose excretion (RT(G)) in vehicle or canagliflozin-treated Zucker diabetic fatty (ZDF) rats. This study aimed to characterize the pharmacodynamic effects of canagliflozin in vitro and in preclinical models of T2DM and obesity. Treatment with canagliflozin 1 mg/kg lowered RT(G) from 415±12 mg/dl to 94±10 mg/dl in ZDF rats while maintaining a threshold relationship between BG and UGE with virtually no UGE observed when BG was below RT(G). Canagliflozin dose-dependently decreased BG concentrations in db/db mice treated acutely. In ZDF rats treated for 4 weeks, canagliflozin decreased glycated hemoglobin (HbA1c) and improved measures of insulin secretion. In obese animal models, canagliflozin increased UGE and decreased BG, body weight gain, epididymal fat, liver weight, and the respiratory exchange ratio. Canagliflozin lowered RT(G) and increased UGE, improved glycemic control and beta-cell function in rodent models of T2DM, and reduced body weight gain in rodent models of obesity.

  19. Voltage Management in Unbalanced Low Voltage Networks Using a Decoupled Phase-Tap-Changer Transformer

    DEFF Research Database (Denmark)

    Coppo, Massimiliano; Turri, Roberto; Marinelli, Mattia

    2014-01-01

    The paper studies a medium voltage-low voltage transformer with a decoupled on load tap changer capability on each phase. The overall objective is the evaluation of the potential benefits on a low voltage network of such possibility. A realistic Danish low voltage network is used for the analysis...

  20. Estimating Voltage Asymmetry Making by One Phase Micro-generator in Low Voltage Network

    Directory of Open Access Journals (Sweden)

    Marian Sobierajski

    2014-12-01

    Full Text Available Connection of one phase micro-generator to the low voltage network increases voltage asymmetry. The voltage asymmetry is defined as the quotient of negative and positive voltage components. The mathematical background of exact and rough computation of the asymmetry quotient is presented in the paper. Considerations are illustrated by simple examples.

  1. 76 FR 70721 - Voltage Coordination on High Voltage Grids; Notice of Staff Workshop

    Science.gov (United States)

    2011-11-15

    ... Energy Regulatory Commission Voltage Coordination on High Voltage Grids; Notice of Staff Workshop Take notice that the Federal Energy Regulatory Commission will hold a Workshop on Voltage Coordination on High Voltage Grids on Thursday, December 1, 2011 from 9 a.m. to 4:30 p.m. This staff-led workshop will be...

  2. Piezo Voltage Controlled Planar Hall Effect Devices

    Science.gov (United States)

    Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K. W.; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

    2016-06-01

    The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

  3. Piezo Voltage Controlled Planar Hall Effect Devices.

    Science.gov (United States)

    Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

    2016-06-22

    The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

  4. Capacitor Voltages Measurement and Balancing in Flying Capacitor Multilevel Converters Utilizing a Single Voltage Sensor

    DEFF Research Database (Denmark)

    Farivar, Glen; Ghias, Amer M. Y. M.; Hredzak, Branislav

    2017-01-01

    This paper proposes a new method for measuring capacitor voltages in multilevel flying capacitor (FC) converters that requires only one voltage sensor per phase leg. Multiple dc voltage sensors traditionally used to measure the capacitor voltages are replaced with a single voltage sensor at the ac...... side of the phase leg. The proposed method is subsequently used to balance the capacitor voltages using only the measured ac voltage. The operation of the proposed measurement and balancing method is independent of the number of the converter levels. Experimental results presented for a five-level FC...

  5. Voltage-controlled photonic oscillator.

    Science.gov (United States)

    Savchenkov, A A; Ilchenko, V S; Liang, W; Eliyahu, D; Matsko, A B; Seidel, D; Maleki, L

    2010-05-15

    We report the development and demonstration of an X-band voltage-controlled photonic oscillator based on a whispering gallery mode resonator made of an electro-optic crystalline material. The oscillator has good spectral purity and wide, agile, linear tunability. We have modified the existing theoretical model of the opto-electronic oscillator to describe the performance of our tunable oscillator and have found a good agreement between the theoretical predictions and the measurement results. We show that the device is promising for higher-frequency applications where high-performance tunable oscillators with wide tunability do not exist.

  6. Using state level employment thresholds to explain Okun's Law

    OpenAIRE

    Herzog, Ryan W.

    2013-01-01

    In this paper we implement a non-dynamic panel threshold model for fifty U.S. states to better understand the factors determining changes in Okun's Law. We test for asymmetries in Okun's Law controlling for changes in industry employment. We find changes in output on unemployment are least sensitive for states with relatively large employment within government, construction, and natural resources sectors and lower employment levels in financial, professional and business services and manufact...

  7. Design of Ultra Low Power 8-Channel Analog Multiplexer Using Dynamic Threshold for Biosignals

    Directory of Open Access Journals (Sweden)

    D.Hari Priya

    2013-10-01

    Full Text Available The design of an ultra low voltage, low power high speed 8 channel Analog multiplexer in 180nm CMOS technology is presented. A modified transmission gate using a dynamic threshold voltage MOSFET (DTMOS is employed in the design. The design is optimized with respect to critical requirements like short switching time, low power dissipation, good linearity and high dynamic range with an operating voltage of 0.4V. The ON and OFF resistances achieved are 32 ohms and 10Mohms respectively with a switching speed of 10MHz. The power dissipation obtained is around 2.65uW for a dynamic range of 1uV to 0.4V.

  8. Voltage Management in Unbalanced Low Voltage Networks Using a Decoupled Phase-Tap-Changer Transformer

    OpenAIRE

    Coppo, Massimiliano; Turri, Roberto; Marinelli, Mattia; Han, Xue

    2014-01-01

    The paper studies a medium voltage-low voltage transformer with a decoupled on load tap changer capability on each phase. The overall objective is the evaluation of the potential benefits on a low voltage network of such possibility. A realistic Danish low voltage network is used for the analysis. The load profiles are characterized by using single phase measurement data on voltages, currents and active powers with a 10 minutes resolution. Different scenarios are considered: no tap action, th...

  9. Threshold criteria for undervoltage breakdown

    Science.gov (United States)

    Cooley, James E.; Choueiri, Edgar Y.

    2008-05-01

    The conditions under which an externally supplied pulse of electrons will induce breakdown in an undervoltaged, low-gain discharge gap are experimentally and theoretically explored. The minimum number of injected electrons required to achieve breakdown in a parallel-plate gap is measured in argon at pd values of 3-10 Torr m using ultraviolet laser pulses to photoelectrically release electrons from the cathode. This value was found to scale inversely with voltage at constant pd and with pressure within the parameter range explored. A dimensionless theoretical description of the phenomenon is formulated and numerically solved. It is found that a significant fraction of the charge on the plates must be injected for breakdown to be achieved at low gain. It is also found that fewer electrons are required as the gain due to electron-impact ionization (α process) is increased, or as the sensitivity of the α process to electric field is enhanced by increasing the gas pressure. A predicted insensitivity to ion mobility implies that the breakdown is determined during the first electron avalanche when space-charge distortion is greatest.

  10. Impact of automatic threshold capture on pulse generator longevity

    Institute of Scientific and Technical Information of China (English)

    CHEN Ruo-han; CHEN Ke-ping; WANG Fang-zheng; HUA Wei; ZHANG Shu

    2006-01-01

    Background The automatic, threshold tracking, pacing algorithm developed by St. Jude Medical, verifies ventricular capture beat by beat by recognizing the evoked response following each pacemaker stimulus. This function was assumed to be not only energy saving but safe. This study estimated the extension in longevity obtained by AutoCapture (AC) compared with pacemakers programmed to manually optimized, nominal output.Methods Thirty-four patients who received the St. Jude Affinity series pacemaker were included in the study.The following measurements were taken: stimulation and sensing threshold, impedance of leads, evoked response and polarization signals by 3501 programmer during followup, battery current and battery impedance under different conditions. For longevity comparison, ventricular output was programmed under three different conditions: (1) AC on; (2) AC off with nominal output, and (3) AC off with pacing output set at twice the pacing threshold with a minimum of 2.0 V. Patients were divided into two groups: chronic threshold is higher or lower than 1 V. The efficacy of AC was evaluated.Results Current drain in the AC on group, AC off with optimized programming or nominal output was (14.33±2.84) mA, (16.74±2.75) mA and (18.4±2.44) mA, respectively (AC on or AC off with optimized programming vs. nominal output, P < 0.01). Estimated longevity was significantly extended by AC on when compared with nominal setting [(103 ± 27) months, (80 ± 24) months, P < 0.01). Furthermore, compared with the optimized programming, AC extends the longevity when the pacing threshold is higher than 1 V.Conclusion AC could significantly prolong pacemaker longevity; especially in the patient with high pacing threshold.

  11. Estimating station noise thresholds for seismic magnitude bias elimination

    Science.gov (United States)

    Peacock, Sheila

    2014-05-01

    To eliminate the upward bias of seismic magnitude caused by censoring of signal hidden by noise, noise level at each station in a network must be estimated. Where noise levels are not measured directly, the method of Kelly and Lacoss (1969) has been used to infer them from bulletin data (Lilwall and Douglas 1984). To verify this estimate of noise level, noise thresholds of International Monitoring System (IMS) stations inferred from the International Data Centre (IDC) Reviewed Event Bulletin (REB) by the Kelly and Lacoss method for 2005-2013 are compared with direct measurements on (i) noise preceding first arrivals in filtered (0.8-4.5 Hz) IMS seismic data, and (ii) noise preceding the expected time of arrival of signals from events, where signal was not actually seen (values gathered by the IDC for maximum-likelihood magnitude calculation). For most stations the direct pre-signal noise measurements are ~0.25 units of log A/T lower than the Kelly&Lacoss thresholds; because the IDC automatic system declares a detection only when the short-term-average-to-long-term-average ratio threshold, which varies with station and frequency band between ~3-6, is exceeded. The noise values at expected times of non-observed signal arrival are ~0.15 units lower than the Kelly and Lacoss thresholds. Exceptions are caused by faulty channels being used for the direct noise or body-wave magnitude (mb) measurements or, for station ARCES and possibly FINES, SPITS and HFS, the wider filter used for signal amplitude than for signal detection admitting noise that swamped the signal. Abrupt changes in thresholds might show mis-documented sensor sensitivity changes at individual stations.

  12. Image Segmentation by Using Threshold Techniques

    CERN Document Server

    Al-amri, Salem Saleh; D., Khamitkar S

    2010-01-01

    This paper attempts to undertake the study of segmentation image techniques by using five threshold methods as Mean method, P-tile method, Histogram Dependent Technique (HDT), Edge Maximization Technique (EMT) and visual Technique and they are compared with one another so as to choose the best technique for threshold segmentation techniques image. These techniques applied on three satellite images to choose base guesses for threshold segmentation image.

  13. Finance, growth and threshold effects

    Directory of Open Access Journals (Sweden)

    Allegret Jean-Pierre

    2012-01-01

    Full Text Available In this paper, we test the existence of financial development threshold effects, firstly, between financial development and long-term growth, and, secondly, between financial development and long-term GDP. We also ask whether such effects may explain the link financial development - convergence/ divergence to the advanced countries’ growth. Our work builds on that of Aghion, Howitt, and Mayer-Foulkes (2004. It differs from previous work about assumptions and methodology. Estimates are performed with GMM dynamic panel data techniques for 112 emerging and developing countries from 1975 to 2007. The results show a positive but vanishing effect of financial development on steady-state GDP, from a critical (an average level of financial development. They do not validate, however, the assumption that the marginal impact of financial development on the steady-state growth rate is more favorable than the degree of financial development is low. We support only partially the role that the financial development could play in the acceleration of the convergence of emerging and developing economies towards the world frontier growth.

  14. A Comparative Study of Ultra-Low Voltage Digital Circuit Design

    Directory of Open Access Journals (Sweden)

    Aaron Arthurs

    2012-07-01

    Full Text Available Ultra-low voltage digital circuit design is an active research area, especially for portable applications such as wearable electronics, intelligent remote sensors, implantable medical devices, and energy-harvesting systems. Due to their application scenarios and circuit components, two major goals for these systems are minimizing energy consumption and improving compatibility with low-voltage power supplies and analog components. The most effective solution to achieve these goals is to reduce the supply voltage, which,however, raises the issue of operability. At ultra-low supply voltages, the integrity of digital signals degrades dramatically due to the indifference between active and leakage currents. In addition, the system timing becomes more unpredictable as the impact of process and supply voltage variations being more significant at lower voltages. This paper presents a comparative study among three techniques for designing digital circuits operating at ultra-low voltages, i.e., Schmitt-triggered gate structure, delayinsensitive asynchronous logic, and Fully-Depleted Silicon-on-Insulator technology. Results show that despite the tradeoffs, all eight combinations of these techniques are viable for designing ultra-low voltage circuits. For a given application, the optimum circuit design can be selected from these combinations based on the lowest voltage, the dynamic range, the power budget, the performance requirement, and the available semiconductor process node.

  15. A Comparative Study of Ultra-Low Voltage Digital Circuit Design

    Directory of Open Access Journals (Sweden)

    Aaron Arthurs,

    2012-06-01

    Full Text Available Ultra-low voltage digital circuit design is an active research area, especially for portable applications such as wearable electronics, intelligent remote sensors, implantable medical devices, and energy-harvesting systems. Due to their application scenarios and circuit components, two major goals for these systems are minimizing energy consumption and improving compatibility with low-voltage power supplies and analog components. The most effective solution to achieve these goals is to reduce the supply voltage, which,however, raises the issue of operability. At ultra-low supply voltages, the integrity of digital signals degrades dramatically due to the indifference between active and leakage currents. In addition, the system timing becomes more unpredictable as the impact of process and supply voltage variations being more significant at lower voltages. This paper presents a comparative study among three techniques for designing digital circuits operating at ultra-low voltages, i.e., Schmitt-triggered gate structure, delay insensitive asynchronous logic, and Fully-Depleted Silicon-on-Insulator technology. Results show that despite the trade offs, all eight combinations of these techniques are viable for designing ultra-low voltage circuits. For a given application, the optimum circuit design can be selected from these combinations based on the lowest voltage, the dynamic range, the power budget, the performance requirement, and the available semiconductor process node.

  16. Threshold electric field in unconventional density waves

    Science.gov (United States)

    Dóra, Balázs; Virosztek, Attila; Maki, Kazumi

    2001-07-01

    As it is well known most charge-density waves (CDW's) and spin-density waves exhibit nonlinear transport with well-defined threshold electric field ET. Here we study theoretically the threshold electric field of unconventional density waves. We find that the threshold field increases monotonically with temperature without divergent behavior at Tc, unlike the one in conventional CDW. The present result in the three-dimensional weak pinning limit appears to describe rather well the threshold electric field observed recently in the low-temperature phase of α-(BEDT-TTF)2KHg(SCN)4.

  17. Enhance Confidentiality of Threshold Signature for MANET

    Institute of Scientific and Technical Information of China (English)

    GUO Wei; XIONG Zhongwei

    2006-01-01

    The participating wireless mobile node that mobile ad hoc network (MANET) communications need to forward may be malicious. That means not only adversary might be able to acquire some sensitive information of the threshold signatures from the compromised node, but also the partial signatures may be fabricated by malicious node, the advantages of threshold signatures would disappear. Signing and encrypting the sensitive information of the threshold signatures, and only the specified receiver can recover it, which will improve the confidentiality of threshold signatures. The security analysis shows the method is suitable for the secure characteristic of MANET that has the malicious nodes, and the message transmission is secure can against the attack.

  18. A Robust Ultra-Low Voltage CPU Utilizing Timing-Error Prevention

    Directory of Open Access Journals (Sweden)

    Markus Hiienkari

    2015-04-01

    Full Text Available To minimize energy consumption of a digital circuit, logic can be operated at sub- or near-threshold voltage. Operation at this region is challenging due to device and environment variations, and resulting performance may not be adequate to all applications. This article presents two variants of a 32-bit RISC CPU targeted for near-threshold voltage. Both CPUs are placed on the same die and manufactured in 28 nm CMOS process. They employ timing-error prevention with clock stretching to enable operation with minimal safety margins while maximizing performance and energy efficiency at a given operating point. Measurements show minimum energy of 3.15 pJ/cyc at 400 mV, which corresponds to 39% energy saving compared to operation based on static signoff timing.

  19. 49 CFR 236.551 - Power supply voltage; requirement.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Power supply voltage; requirement. 236.551 Section... supply voltage; requirement. The voltage of power supply shall be maintained within 10 percent of rated voltage....

  20. MOS Current Mode Logic Near Threshold Circuits

    Directory of Open Access Journals (Sweden)

    Alexander Shapiro

    2014-06-01

    Full Text Available Near threshold circuits (NTC are an attractive and promising technology that provides significant power savings with some delay penalty. The combination of NTC technology with MOS current mode logic (MCML is examined in this work. By combining MCML with NTC, the constant power consumption of MCML is reduced to leakage power levels that can be tolerated in certain modern applications. Additionally, the speed of NTC is improved due to the high speed nature of MCML technology. A 14 nm Fin field effect transistor (FinFET technology is used to evaluate these combined circuit techniques. A 32-bit Kogge Stone adder is chosen as a demonstration vehicle for feasibility analysis. MCML with NTC is shown to yield enhanced power efficiency when operated above 1 GHz with a 100% activity factor as compared to standard CMOS. MCML with NTC is more power efficient than standard CMOS beyond 9 GHz over a wide range of activity factors. MCML with NTC also exhibits significantly lower noise levels as compared to standard CMOS. The results of the analysis demonstrate that pairing NTC and MCML is efficient when operating at high frequencies and activity factors.

  1. Voltage Unbalance Compensation with Smart Three-phase Loads

    DEFF Research Database (Denmark)

    Douglass, Philip; Trintis, Ionut; Munk-Nielsen, Stig

    2016-01-01

    voltage, but it does not reduce the negative sequence voltage. The controller that uses phase-phase voltage as input eliminates negative sequence voltage, and reduces voltage deviations from the average to approximately half their initial value. Current unbalance is reduced when the voltage unbalance...... is caused by asymmetrical loads. These results suggest that the optimal algorithm to reduce system unbalance depends on which system parameter is most important: phase-neutral voltage unbalance, phase-phase voltage unbalance, or current unbalance....

  2. Power conditioning using dynamic voltage restorers under different voltage sag types

    Directory of Open Access Journals (Sweden)

    Ahmed M. Saeed

    2016-01-01

    Full Text Available Voltage sags can be symmetrical or unsymmetrical depending on the causes of the sag. At the present time, one of the most common procedures for mitigating voltage sags is by the use of dynamic voltage restorers (DVRs. By definition, a DVR is a controlled voltage source inserted between the network and a sensitive load through a booster transformer injecting voltage into the network in order to correct any disturbance affecting a sensitive load voltage. In this paper, modelling of DVR for voltage correction using MatLab software is presented. The performance of the device under different voltage sag types is described, where the voltage sag types are introduced using the different types of short-circuit faults included in the environment of the MatLab/Simulink package. The robustness of the proposed device is evaluated using the common voltage sag indices, while taking into account voltage and current unbalance percentages, where maintaining the total harmonic distortion percentage of the load voltage within a specified range is desired. Finally, several simulation results are shown in order to highlight that the DVR is capable of effective correction of the voltage sag while minimizing the grid voltage unbalance and distortion, regardless of the fault type.

  3. Power conditioning using dynamic voltage restorers under different voltage sag types.

    Science.gov (United States)

    Saeed, Ahmed M; Abdel Aleem, Shady H E; Ibrahim, Ahmed M; Balci, Murat E; El-Zahab, Essam E A

    2016-01-01

    Voltage sags can be symmetrical or unsymmetrical depending on the causes of the sag. At the present time, one of the most common procedures for mitigating voltage sags is by the use of dynamic voltage restorers (DVRs). By definition, a DVR is a controlled voltage source inserted between the network and a sensitive load through a booster transformer injecting voltage into the network in order to correct any disturbance affecting a sensitive load voltage. In this paper, modelling of DVR for voltage correction using MatLab software is presented. The performance of the device under different voltage sag types is described, where the voltage sag types are introduced using the different types of short-circuit faults included in the environment of the MatLab/Simulink package. The robustness of the proposed device is evaluated using the common voltage sag indices, while taking into account voltage and current unbalance percentages, where maintaining the total harmonic distortion percentage of the load voltage within a specified range is desired. Finally, several simulation results are shown in order to highlight that the DVR is capable of effective correction of the voltage sag while minimizing the grid voltage unbalance and distortion, regardless of the fault type.

  4. Regulation of cricket phonotaxis through hormonal control of the threshold of an identified auditory neuron.

    Science.gov (United States)

    Stout, J; Atkins, G; Zacharias, D

    1991-12-01

    1. The phonotactic threshold of 3 to 5-day-old adult female Acheta domesticus and the threshold of the L1 auditory neuron drop progressively (Fig. 1). 2. Application of juvenile hormone III (JHIII) to 1-day-old females caused both the female's threshold for phonotaxis and the threshold of the L1 auditory neuron to drop 20 or more dB over the next 12 h (Figs. 3-4). 3. JHIII's effect on phonotactic threshold could be blocked by injection with a transcription (alpha-amanitin) or a translation blocker (emetine, Fig. 3). 4. Injection of emetine also prevented the JHIII induced drop in L1's threshold (Fig. 4). 5. Application of JHIII to the surface of, or microinjection of JHIII into one prothoracic hemiganglion caused the female to circle phonotactically away from the side of hormone addition at thresholds 25 to 35 dB lower than the pre-JHIII addition threshold within 2 h (Fig. 6). 6. Application of JHIII to the surface of both prothoracic hemiganglia, accompanied by microinjection of emetine into one hemiganglion resulted in the female emetine into one hemiganglion resulted in the female circling phonotactically toward the side receiving emetine injection, with a 25 to 35 dB drop in threshold (Fig. 6).

  5. High voltage load resistor array

    Energy Technology Data Exchange (ETDEWEB)

    Lehmann, Monty Ray [Smithfield, VA

    2005-01-18

    A high voltage resistor comprising an array of a plurality of parallel electrically connected resistor elements each containing a resistive solution, attached at each end thereof to an end plate, and about the circumference of each of the end plates, a corona reduction ring. Each of the resistor elements comprises an insulating tube having an electrode inserted into each end thereof and held in position by one or more hose clamps about the outer periphery of the insulating tube. According to a preferred embodiment, the electrode is fabricated from stainless steel and has a mushroom shape at one end, that inserted into the tube, and a flat end for engagement with the end plates that provides connection of the resistor array and with a load.

  6. Detectability thresholds of general modular graphs

    CERN Document Server

    Kawamoto, Tatsuro

    2016-01-01

    We investigate the detectability thresholds of various modular structures in the stochastic block model. Our analysis reveals how the detectability threshold is related to the details of the modular pattern, including the hierarchy of the clusters. We show that certain planted structures are impossible to infer regardless of their fuzziness.

  7. Thresholding magnetic resonance images of human brain

    Institute of Scientific and Technical Information of China (English)

    Qing-mao HU; Wieslaw L NOWINSKI

    2005-01-01

    In this paper, methods are proposed and validated to determine low and high thresholds to segment out gray matter and white matter for MR images of different pulse sequences of human brain. First, a two-dimensional reference image is determined to represent the intensity characteristics of the original three-dimensional data. Then a region of interest of the reference image is determined where brain tissues are present. The non-supervised fuzzy c-means clustering is employed to determine: the threshold for obtaining head mask, the low threshold for T2-weighted and PD-weighted images, and the high threshold for T1-weighted, SPGR and FLAIR images. Supervised range-constrained thresholding is employed to determine the low threshold for T1-weighted, SPGR and FLAIR images. Thresholding based on pairs of boundary pixels is proposed to determine the high threshold for T2- and PD-weighted images. Quantification against public data sets with various noise and inhomogeneity levels shows that the proposed methods can yield segmentation robust to noise and intensity inhomogeneity. Qualitatively the proposed methods work well with real clinical data.

  8. Voting on Thresholds for Public Goods

    DEFF Research Database (Denmark)

    Rauchdobler, Julian; Sausgruber, Rupert; Tyran, Jean-Robert

    Introducing a threshold in the sense of a minimal project size transforms a public goods game with an inefficient equilibrium into a coordination game with a set of Pareto-superior equilibria. Thresholds may therefore improve efficiency in the voluntary provision of public goods. In our one...

  9. Thresholds for odor and nasal pungency.

    Science.gov (United States)

    Cometto-Muñiz, J E; Cain, W S

    1990-11-01

    Detection thresholds were measured repeatedly for 11 chemicals in normosmic and anosmic subjects. The stimuli comprised the first eight members of the series of n-aliphatic alcohols, phenyl ethyl alcohol, pyridine, and menthol. Results showed that anosmics could detect, via pungency, all but phenyl ethyl alcohol reliably. In the aliphatic series, both odor and pungency thresholds declined with chain length in a way that implied dependence of both in part on phase distribution in the mucosa. Odor thresholds, however, declined more rapidly than pungency thresholds: the ratio of anosmics threshold/normosmics threshold increased from 23 for methanol to 10,000 for 1-octanol. The outcome of a scaling experiment employing normosmic subjects indicated that, with the exception of methanol and ethanol, pungency arose when perceived intensity reached a narrowly tuned criterion level. When thresholds were expressed as percentages of saturated vapor, an index of thermodynamic activity, thereby accounting for differences in solubility and in phase distribution in the mucosa among the various stimuli, both odor and pungency thresholds depicted a striking constancy across stimuli.

  10. Mesopic visual efficiency I: Detection threshold measurements

    NARCIS (Netherlands)

    Eloholma, M.; Ketomaki, J; Halonen, L.; Walkey, H.; Goodman, T.; Alferdinck, J.W.A.M.; Bodrogi, P.

    2007-01-01

    Achromatic thresholds are measured at three sites to investigate the effects of light spectrum on achromatic detection thresholds in the mesopic region. The results of measurements using quasi-monochromatic targets reveal spectral sensitivity functions with two or three peaks, a so-called ‘chromatic

  11. Applying Threshold Concepts to Finance Education

    Science.gov (United States)

    Hoadley, Susan; Wood, Leigh N.; Tickle, Leonie; Kyng, Tim

    2016-01-01

    Purpose: The purpose of this paper is to investigate and identify threshold concepts that are the essential conceptual content of finance programmes. Design/Methodology/Approach: Conducted in three stages with finance academics and students, the study uses threshold concepts as both a theoretical framework and a research methodology. Findings: The…

  12. Threshold Concepts, Systems and Learning for Sustainability

    Science.gov (United States)

    Sandri, Orana Jade

    2013-01-01

    This paper presents a framework for understanding the role that systems theory might play in education for sustainability (EfS). It offers a sketch and critique of Land and Meyer's notion of a "threshold concept", to argue that seeing systems as a threshold concept for sustainability is useful for understanding the processes of…

  13. Propagation of disturbances as voltage fluctuations in transmission networks

    Directory of Open Access Journals (Sweden)

    Albert Hermina

    2016-08-01

    Full Text Available Significant changes occurred in the power system in Romania in recent years by reducing the power used in the system, the number of classic power sources in operation as well as by implementing renewable energy sources, have determined short circuit power reduction (node rigidity in the points where disturbing users are connected, that in the absence of adequate measures, result in disturbances above acceptable levels. The paper analyzes two power systems areas in which are connected users that cause voltage fluctuation. Disturbances as voltage fluctuations resulting in these nodes may exceed the acceptable values and can spread in the transmission network affecting power quality over large system areas. The analysis conducted reveals the influence of short circuit power in nodes where these users are connected and highlights the fact that in some cases (e.g. lines out of operation for maintenance, shutdown of classic units in the area the disturbances in the transmission network sent to the users at lower voltages may have values above those allowed. Technical Code of existing power transmission network makes no reference to voltage fluctuations, as a rule, in the electricity transmission network was considered that this phenomenon should not exist.

  14. Steering liquid metal flow in microchannels using low voltages.

    Science.gov (United States)

    Tang, Shi-Yang; Lin, Yiliang; Joshipura, Ishan D; Khoshmanesh, Khashayar; Dickey, Michael D

    2015-10-07

    Liquid metals based on gallium, such as eutectic gallium indium (EGaIn) and Galinstan, have been integrated as static components in microfluidic systems for a wide range of applications including soft electrodes, pumps, and stretchable electronics. However, there is also a possibility to continuously pump liquid metal into microchannels to create shape reconfigurable metallic structures. Enabling this concept necessitates a simple method to control dynamically the path the metal takes through branched microchannels with multiple outlets. This paper demonstrates a novel method for controlling the directional flow of EGaIn liquid metal in complex microfluidic networks by simply applying a low voltage to the metal. According to the polarity of the voltage applied between the inlet and an outlet, two distinct mechanisms can occur. The voltage can lower the interfacial tension of the metal via electrocapillarity to facilitate the flow of the metal towards outlets containing counter electrodes. Alternatively, the voltage can drive surface oxidation of the metal to form a mechanical impediment that redirects the movement of the metal towards alternative pathways. Thus, the method can be employed like a 'valve' to direct the pathway chosen by the metal without mechanical moving parts. The paper elucidates the operating mechanisms of this valving system and demonstrates proof-of-concept control over the flow of liquid metal towards single or multiple directions simultaneously. This method provides a simple route to direct the flow of liquid metal for applications in microfluidics, optics, electronics, and microelectromechanical systems.

  15. Programable Driver for Voltage-Controlled Oscillators

    Science.gov (United States)

    Fowler, L. E.; Mcneil, J. A.

    1985-01-01

    Electronically programable read-only memory (EPROM) and digital-to-analog converter provide customized time-varying voltage for frequency modulation. Voltage used to modulate IMPATT oscillator that serves as microwave pump for solid-state maser in low-noise amplifier. EPROM simple to tailor voltage waveform to suit characteristics of given maser. Digital information for waveform programed into EPROM chip; digital-to-analog converter reads information and produces corresponding analog wave. Principle readily adapted to other applications.

  16. Generator of ultrashort megavolt voltage pulses

    CERN Document Server

    Zheltov, K A; Shalimanov, V F

    2002-01-01

    Paper describes approx 3 ns duration and > 1 MW amplitude voltage pulse generator under high-ohmic (approx 450 Ohm) load. Generator comprises pulse transformer with magnetized core, as well as, resonance tuned circuit of high-voltage solenoid and accumulating spaces of a shaping line containing, moreover, spark gap to switch charge in transmitting line. Paper contains the results of voltage measuring in generator basic units

  17. Investigation of pulsed voltage limiters characteristics

    Directory of Open Access Journals (Sweden)

    Karimov A. V.

    2012-06-01

    Full Text Available A new method for measuring the voltage limit is offered. It has been designed to measure high-power pulsed current of voltage limiters. The error of this method is half as much as the error of the known method of direct measurement. The investigation of dependence of power capability of single-crystal and double-crystal voltage limiters and of the pulsed operation time on pulse duration.

  18. Evaluation of treatment thresholds for unconjugated hyperbilirubinemia in preterm infants: effects on serum bilirubin and on hearing loss?

    Directory of Open Access Journals (Sweden)

    Christian V Hulzebos

    Full Text Available BACKGROUND: Severe unconjugated hyperbilirubinemia may cause deafness. In the Netherlands, 25% lower total serum bilirubin (TSB treatment thresholds were recently implemented for preterm infants. OBJECTIVE: To determine the rate of hearing loss in jaundiced preterms treated at high or at low TSB thresholds. DESIGN/METHODS: In this retrospective study conducted at two neonatal intensive care units in the Netherlands, we included preterms (gestational age 35 dB. RESULTS: There were 479 patients in the high and 144 in the low threshold group. Both groups had similar gestational ages (29.5 weeks and birth weights (1300 g. Mean and mean peak TSB levels were significantly lower after the implementation of the novel thresholds: 152 ± 43 µmol/L and 212 ± 52 µmol/L versus 131 ± 37 µmol/L and 188 ± 46 µmol/L for the high versus low thresholds, respectively (P<0.001. The incidence of hearing loss was 2.7% (13/479 in the high and 0.7% (1/144 in the low TSB threshold group (NNT = 50, 95% CI, 25-3302. CONCLUSIONS: Implementation of lower treatment thresholds resulted in reduced mean and peak TSB levels. The incidence of hearing impairment in preterms with a gestational age <32 weeks treated at low TSB thresholds was substantially lower compared to preterms treated at high TSB thresholds. Further research with larger sample sizes and power is needed to determine if this effect is statistically significant.

  19. Vector Broadcast Channels: Optimal Threshold Selection Problem

    CERN Document Server

    Samarasinghe, Tharaka; Evans, Jamie

    2011-01-01

    Threshold feedback policies are well known and provably rate-wise optimal selective feedback techniques for communication systems requiring partial channel state information (CSI). However, optimal selection of thresholds at mobile users to maximize information theoretic data rates subject to feedback constraints is an open problem. In this paper, we focus on the optimal threshold selection problem, and provide a solution for this problem for finite feedback systems. Rather surprisingly, we show that using the same threshold values at all mobile users is not always a rate-wise optimal feedback strategy, even for a system with identical users experiencing statistically the same channel conditions. By utilizing the theory of majorization, we identify an underlying Schur-concave structure in the rate function and obtain sufficient conditions for a homogenous threshold feedback policy to be optimal. Our results hold for most fading channel models, and we illustrate an application of our results to familiar Raylei...

  20. Provably secure robust threshold partial blind signature

    Institute of Scientific and Technical Information of China (English)

    CAO Zhenfu; ZHU Haojin; LU Rongxing

    2006-01-01

    Threshold digital signature and blind signature are playing important roles in cryptography as well as in practical applications such as e-cash and e-voting systems.Over the past few years, many cryptographic researchers have made considerable headway in this field. However, to our knowledge, most of existing threshold blind signature schemes are based on the discrete logarithm problem. In this paper, we propose a new robust threshold partial blind signature scheme based on improved RSA cryptosystem.This scheme is the first threshold partial blind signature scheme based on factoring, and the robustness of threshold partial blind signature is also introduced. Moreover, in practical application, the proposed scheme will be especially suitable for blind signature-based voting systems with multiple administrators and secure electronic cash systems to prevent their abuse.

  1. Simulation of Reactive Power Imbalances in the Transmission Power Grid Threatened by the Problem of Voltage Instability

    OpenAIRE

    Robert Lis; Mirosław Łabuzek

    2013-01-01

    The reactive power balance in the transmission power grid depends on the reactive power produced by the power stations and the value generated by the capacitive power lines and static compensators. Reactive transmission losses become greater than shunt capacitive generation at the turning-point of voltage stability. Then lowering bus voltages drive EPS into voltage collapse point. The paper presents the balance of reactive power depending on the power demand growth, which is then used to esti...

  2. Low-Voltage Switched-Capacitor Circuits

    DEFF Research Database (Denmark)

    Bidari, E.; Keskin, M.; Maloberti, F.

    1999-01-01

    Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications.......Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications....

  3. Characterisation of the VELO High Voltage System

    CERN Document Server

    Rakotomiaramanana, B; Eklund, L

    2008-01-01

    The high voltage system supplies the bias voltage to the 88 silicon sensors which comprise the LHCb Vertex Locator (VELO). This note describes the results of the tests which have been performed on the hardware of the high voltage system of the VELO. Each individual test detailed in this note corresponds to a specific requirement of the system. These requirements arise primarily from ensuring the safety of the silicon sensors and the quality of the data taken from the VELO modules. The tests performed are in four categories: normal operation of the high voltage system; vercation of its stability under operation; discussion of its behaviour in failure modes; and details of operation at low voltage. Noteworthy issues, identified through the tests, include the behaviour of the high voltage modules at voltages below 9V, the current limit that can be applied during ramping of the voltage, and the speed with which the voltage is cut during failures of the system. The results of these tests provide high confidence th...

  4. Characterisation of the VELO High Voltage System

    CERN Document Server

    Rakotomiaramanana, B; Parkes, C; Eklund, L

    2008-01-01

    The high voltage system supplies the bias voltage to the 88 silicon sensors which comprise the LHCb Vertex Locator (VELO). This note describes the results of the tests which have been performed on the hardware of the high voltage system of the VELO. Each individual test detailed in this note corresponds to a specific requirement of the system. These requirements arise primarily from ensuring the safety of the silicon sensors and the quality of the data taken from the VELO modules. The tests performed are in four categories: normal operation of the high voltage system; verification of its stability under operation; discussion of its behaviour in failure modes; and details of operation at low voltage. Noteworthy issues, identified through the tests, include the behaviour of the high voltage modules at voltages below 9V, the current limit that can be applied during ramping of the voltage, and the speed with which the voltage is cut during failures of the system. The results of these tests provide high confidence...

  5. Microprocessor-controlled, programmable ramp voltage generator

    Energy Technology Data Exchange (ETDEWEB)

    Hopwood, J.

    1978-11-01

    A special-purpose voltage generator has been developed for driving the quadrupole mass filter of a residual gas analyzer. The generator is microprocessor-controlled with desired ramping parameters programmed by setting front-panel digital thumb switches. The start voltage, stop voltage, and time of each excursion are selectable. A maximum of five start-stop levels may be pre-selected for each program. The ramp voltage is 0 to 10 volts with sweep times from 0.1 to 999.99 seconds.

  6. Magnetoelectric voltage coefficients of magnetoelectric composites

    Institute of Scientific and Technical Information of China (English)

    WAN Yong-ping; ZHONG Zheng; QIU Jin-hao

    2006-01-01

    The magnetoelectric(ME) effect of the particulate magnetostrictive/piezoelectric composite was theoretically studied. The dependence of the ME voltage coefficients on the material properties of the magnetostrictive phase was discussed. The permittivity,permeability and the elastic modulus of the magnetostrictive phase generally have obvious influences on the ME voltage coefficients. The magnetostrictive phase with a large permittivity,large permeability or stiffer modulus will respectively contribute to the higher ME voltage coefficients. For a certain kind of piezoelectric matrix,the ME voltage coefficients can be improved to some extent by choosing those magnetostrictive materials with large permittivity,permeability or high elastic modulus.

  7. Maximum permissible voltage of YBCO coated conductors

    Energy Technology Data Exchange (ETDEWEB)

    Wen, J.; Lin, B.; Sheng, J.; Xu, J.; Jin, Z. [Department of Electrical Engineering, Shanghai Jiao Tong University, Shanghai (China); Hong, Z., E-mail: zhiyong.hong@sjtu.edu.cn [Department of Electrical Engineering, Shanghai Jiao Tong University, Shanghai (China); Wang, D.; Zhou, H.; Shen, X.; Shen, C. [Qingpu Power Supply Company, State Grid Shanghai Municipal Electric Power Company, Shanghai (China)

    2014-06-15

    Highlights: • We examine three kinds of tapes’ maximum permissible voltage. • We examine the relationship between quenching duration and maximum permissible voltage. • Continuous I{sub c} degradations under repetitive quenching where tapes reaching maximum permissible voltage. • The relationship between maximum permissible voltage and resistance, temperature. - Abstract: Superconducting fault current limiter (SFCL) could reduce short circuit currents in electrical power system. One of the most important thing in developing SFCL is to find out the maximum permissible voltage of each limiting element. The maximum permissible voltage is defined as the maximum voltage per unit length at which the YBCO coated conductors (CC) do not suffer from critical current (I{sub c}) degradation or burnout. In this research, the time of quenching process is changed and voltage is raised until the I{sub c} degradation or burnout happens. YBCO coated conductors test in the experiment are from American superconductor (AMSC) and Shanghai Jiao Tong University (SJTU). Along with the quenching duration increasing, the maximum permissible voltage of CC decreases. When quenching duration is 100 ms, the maximum permissible of SJTU CC, 12 mm AMSC CC and 4 mm AMSC CC are 0.72 V/cm, 0.52 V/cm and 1.2 V/cm respectively. Based on the results of samples, the whole length of CCs used in the design of a SFCL can be determined.

  8. Inductive voltage divider modeling in Matlab

    Science.gov (United States)

    Andreev, S. A.; Kim, V. L.

    2017-01-01

    Inductive voltage dividers have the most appropriate metrological characteristics on alternative current and are widely used for converting physical signals. The model of a double-decade inductive voltage divider was designed with the help of Matlab/Simulink. The first decade is an inductive voltage divider with balanced winding, the second decade is a single-stage inductive voltage divider. In the paper, a new transfer function algorithm was given. The study shows errors and differences that appeared between the third degree reduced model and a twenty degree unreduced model. The obtained results of amplitude error differ no more than by 7 % between the reduced and unreduced model.

  9. Development of a voltage scanner of chopper

    CERN Document Server

    Shen Guan Ren; LiShengLi; WangQuanXing; Wu Long Cheng

    2001-01-01

    Development of voltage sweeper of chopper with CPNG are introduced. Voltage sweeper is one of important key parts of chopper. Two years working prove that it is stable and reliable. Its main technology performance save: sine wave frequency: 750 kHz +- 20 Hz; total distortion: 65 Db; output voltage (V-V): 0->=4000 V; the error7 W; voltage supply: 220V AC +-10%, 50 +- 1 Hz; total power supply: <100W; Work temperature range: 0 - 40 degree; Stability in long time <=1%

  10. Excitation of voltage oscillations in an induction voltage adder

    Directory of Open Access Journals (Sweden)

    Nichelle Bruner

    2009-07-01

    Full Text Available The induction voltage adder is an accelerator architecture used in recent designs of pulsed-power driven x-ray radiographic systems such as Sandia National Laboratories’ Radiographic Integrated Test Stand (RITS, the Atomic Weapons Establishment’s planned Hydrus Facility, and the Naval Research Laboratory’s Mercury. Each of these designs relies on magnetic insulation to prevent electron loss across the anode-cathode gap in the vicinity of the adder as well as in the coaxial transmission line. Particle-in-cell simulations of the RITS adder and transmission line show that, as magnetic insulation is being established during a pulse, some electron loss occurs across the gap. Sufficient delay in the cavity pulse timings provides an opportunity for high-momentum electrons to deeply penetrate the cavities of the adder cells where they can excite radio-frequency resonances. These oscillations may be amplified in subsequent gaps, resulting in oscillations in the output power. The specific modes supported by the RITS-6 accelerator and details of the mechanism by which they are excited are presented in this paper.

  11. Performance improvement of per-user threshold based multiuser switched scheduling system

    KAUST Repository

    Nam, Haewoon

    2013-01-01

    SUMMARY This letter proposes a multiuser switched scheduling scheme with per-user threshold and post user selection and provides a generic analytical framework for determining the optimal feedback thresholds. The proposed scheme applies an individual feedback threshold for each user rather than a single common threshold for all users to achieve some capacity gain due to the flexibility of threshold selection as well as a lower scheduling outage probability. In addition, since scheduling outage may occur with a non-negligible probability, the proposed scheme employs post user selection in order to further improve the ergodic capacity, where the user with the highest potential for a higher channel quality than other users is selected. Numerical and simulation results show that the capacity gain by post user selection is significant when random sequence is used. Copyright © 2013 The Institute of Electronics, Information and Communication Engineers.

  12. Threshold for permanent refractive index change in crystalline silicon by femtosecond laser irradiation

    Science.gov (United States)

    Bachman, D.; Chen, Z.; Fedosejevs, R.; Tsui, Y. Y.; Van, V.

    2016-08-01

    An optical damage threshold for crystalline silicon from single femtosecond laser pulses was determined by detecting a permanent change in the refractive index of the material. This index change could be detected with unprecedented sensitivity by measuring the resonant wavelength shift of silicon integrated optics microring resonators irradiated with femtosecond laser pulses at 400 nm and 800 nm wavelengths. The threshold for permanent index change at 400 nm wavelength was determined to be 0.053 ± 0.007 J/cm2, which agrees with previously reported threshold values for femtosecond laser modification of crystalline silicon. However, the threshold for index change at 800 nm wavelength was found to be 0.044 ± 0.005 J/cm2, which is five times lower than the previously reported threshold values for visual change on the silicon surface. The discrepancy is attributed to possible modification of the crystallinity of silicon below the melting temperature that has not been detected before.

  13. Monocular and binocular depth discrimination thresholds.

    Science.gov (United States)

    Kaye, S B; Siddiqui, A; Ward, A; Noonan, C; Fisher, A C; Green, J R; Brown, M C; Wareing, P A; Watt, P

    1999-11-01

    Measurement of stereoacuity at varying distances, by real or simulated depth stereoacuity tests, is helpful in the evaluation of patients with binocular imbalance or strabismus. Although the cue of binocular disparity underpins stereoacuity tests, there may be variable amounts of other binocular and monocular cues inherent in a stereoacuity test. In such circumstances, a combined monocular and binocular threshold of depth discrimination may be measured--stereoacuity conventionally referring to the situation where binocular disparity giving rise to retinal disparity is the only cue present. A child-friendly variable distance stereoacuity test (VDS) was developed, with a method for determining the binocular depth threshold from the combined monocular and binocular threshold of depth of discrimination (CT). Subjects with normal binocular function, reduced binocular function, and apparently absent binocularity were included. To measure the threshold of depth discrimination, subjects were required by means of a hand control to align two electronically controlled spheres at viewing distances of 1, 3, and 6m. Stereoacuity was also measured using the TNO, Frisby, and Titmus stereoacuity tests. BTs were calculated according to the function BT= arctan (1/tan alphaC - 1/tan alphaM)(-1), where alphaC and alphaM are the angles subtended at the nodal points by objects situated at the monocular threshold (alphaM) and the combined monocular-binocular threshold (alphaC) of discrimination. In subjects with good binocularity, BTs were similar to their combined thresholds, whereas subjects with reduced and apparently absent binocularity had binocular thresholds 4 and 10 times higher than their combined thresholds (CT). The VDS binocular thresholds showed significantly higher correlation and agreement with the TNO test and the binocular thresholds of the Frisby and Titmus tests, than the corresponding combined thresholds (p = 0.0019). The VDS was found to be an easy to use real depth

  14. Grammar Specialization through Entropy Thresholds

    CERN Document Server

    Samuelsson, C

    1994-01-01

    Explanation-based generalization is used to extract a specialized grammar from the original one using a training corpus of parse trees. This allows very much faster parsing and gives a lower error rate, at the price of a small loss in coverage. Previously, it has been necessary to specify the tree-cutting criteria (or operationality criteria) manually; here they are derived automatically from the training set and the desired coverage of the specialized grammar. This is done by assigning an entropy value to each node in the parse trees and cutting in the nodes with sufficiently high entropy values.

  15. Aging-associated changes in motor axon voltage-gated Na(+) channel function in mice

    DEFF Research Database (Denmark)

    Moldovan, Mihai; Rosberg, Mette Romer; Alvarez, Susana

    2016-01-01

    Accumulating myelin abnormalities and conduction slowing occur in peripheral nerves during aging. In mice deficient of myelin protein P0, severe peripheral nervous system myelin damage is associated with ectopic expression of Nav1.8 voltage-gated Na(+) channels on motor axons aggravating...... the functional impairment. The aim of the present study was to investigate the effect of regular aging on motor axon function with particular emphasis on Nav1.8. We compared tibial nerve conduction and excitability measures by threshold tracking in 12 months (mature) and 20 months (aged) wild-type (WT) mice....... With aging, deviations during threshold electrotonus were attenuated and the resting current-threshold slope and early refractoriness were increased. Modeling indicated that, in addition to changes in passive membrane properties, motor fibers in aged WT mice were depolarized. An increased Nav1.8 isoform...

  16. Influence of Ambient Humidity on the Voltage Response of Ionic Polymer-Metal Composite Sensor.

    Science.gov (United States)

    Zhu, Zicai; Horiuchi, Tetsuya; Kruusamäe, Karl; Chang, Longfei; Asaka, Kinji

    2016-03-31

    Electrical potential based on ion migration exists not only in natural systems but also in ionic polymer materials. In order to investigate the influence of ambient humidity on voltage response, classical Au-Nafion IPMC was chosen as the reference sample. Voltage response under a bending deformation was measured in two ways: first, continuous measurement of voltage response in the process of absorption and desorption of water to study the tendency of voltage variation at all water states; second, measurements at multiple fixed ambient humidity levels to characterize the process of voltage response quantitatively. Ambient humidity influences the voltage response mainly by varying water content in ionic polymer. Under a step bending, the amplitude of initial voltage peak first increases and then decreases as the ambient humidity and the inherent water content decrease. This tendency is explained semiquantitatively by mass storage capacity related to the stretchable state of the Nafion polymer network. Following the initial peak, the voltage shows a slow decay to a steady state, which is first characterized in this paper. The relative voltage decay during the steady state always decreases as the ambient humidity is lowered. It is ascribed to progressive increase of the ratio between the water molecules in the cation hydration shell to the free water. Under sinusoidal mechanical bending excitation in the range of 0.1-10 Hz, the voltage magnitude increases with frequency at high ambient humidity but decreases with frequency at low ambient humidity. The relationship is mainly controlled by the voltage decay effect and the response speed.

  17. A Synchrophasor Based Optimal Voltage Control Scheme with Successive Voltage Stability Margin Improvement

    Directory of Open Access Journals (Sweden)

    Heng-Yi Su

    2016-01-01

    Full Text Available This paper proposes an optimal control scheme based on a synchronized phasor (synchrophasor for power system secondary voltage control. The framework covers voltage stability monitoring and control. Specifically, a voltage stability margin estimation algorithm is developed and built in the newly designed adaptive secondary voltage control (ASVC method to achieve more reliable and efficient voltage regulation in power systems. This new approach is applied to improve voltage profile across the entire power grid by an optimized plan for VAR (reactive power sources allocation; therefore, voltage stability margin of a power system can be increased to reduce the risk of voltage collapse. An extensive simulation study on the IEEE 30-bus test system is carried out to demonstrate the feasibility and effectiveness of the proposed scheme.

  18. Ultra-low threshold gallium nitride photonic crystal nanobeam laser

    Energy Technology Data Exchange (ETDEWEB)

    Niu, Nan, E-mail: nanniu@fas.harvard.edu; Woolf, Alexander; Wang, Danqing; Hu, Evelyn L. [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Zhu, Tongtong; Oliver, Rachel A. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Quan, Qimin [Rowland Institute at Harvard University, Cambridge, Massachusetts 02142 (United States)

    2015-06-08

    We report exceptionally low thresholds (9.1 μJ/cm{sup 2}) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (>100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance.

  19. Low-Actuation Voltage MEMS Digital-to-Analog Converter with Parylene Spring Structures

    Directory of Open Access Journals (Sweden)

    Cheng-Wen Ma

    2015-08-01

    Full Text Available We propose an electrostatically-actuated microelectromechanical digital-to-analog converter (M-DAC device with low actuation voltage. The spring structures of the silicon-based M-DAC device were monolithically fabricated using parylene-C. Because the Young’s modulus of parylene-C is considerably lower than that of silicon, the electrostatic microactuators in the proposed device require much lower actuation voltages. The actuation voltage of the proposed M-DAC device is approximately 6 V, which is less than one half of the actuation voltages of a previously reported M-DAC equipped with electrostatic microactuators. The measured total displacement of the proposed three-bit M-DAC is nearly 504 nm, and the motion step is approximately 72 nm. Furthermore, we demonstrated that the M-DAC can be employed as a mirror platform with discrete displacement output for a noncontact surface profiling system.

  20. Laser-induced Breakdown Spectroscopy and ablation threshold analysis using a megahertz Yb fiber laser oscillator

    Energy Technology Data Exchange (ETDEWEB)

    Parker, Gregory J.; Parker, Daniel E.; Nie, Bai; Lozovoy, Vadim [Department of Chemistry, Michigan State University, East Lansing, MI 48824 (United States); Dantus, Marcos, E-mail: dantus@msu.edu [Department of Chemistry, Michigan State University, East Lansing, MI 48824 (United States); Department of Physics and Astronomy, Michigan State University, East Lansing, MI 48824 (United States)

    2015-05-01

    A LIBS system is demonstrated using a 100 m cavity Yb fiber oscillator producing ~ 70 ps, 320 nJ clusters of 50–100 fs sub-pulses at 2 MHz. A new empirical model for femtosecond ablation is presented to explain the LIBS signal intensity's non-linear dependence on pulse fluence by accounting for the Gaussian beam's spatial distribution. This model is compared to experimental data and found to be superior to linear threshold fits. This model is then used to measure the ablation threshold of Cu using a typical amplified Ti:sapphire system, and found to reproduce previously reported values to within ~ 20%. The ablation threshold of Cu using the Yb fiber oscillator system was measured to be five times lower than on the amplified Ti:sapphire system. This effect is attributed to the formation of nanostructures on the surface, which have previously been shown to decrease the ablation threshold. The plasma lifetime is found to be ~ 1 ns, much shorter than that of nanosecond ablation, further indicating that the decreased threshold results from surface effects rather than laser–plasma interaction. The low threshold and high pulse energy of the Yb fiber oscillator allows the acquisition of LIBS spectra at megahertz repetition rates. This system could potentially be developed into a compact, fiber-based portable LIBS device taking advantage of the benefits of ultrafast pulses and high repetition rates. - Highlights: • We performed LIBS using a unique ultrafast fiber laser oscillator producing clusters of femtosecond pulses at 2 MHz. • We found the LIBS threshold to be lower than the ablation threshold for single femtosecond laser pulses. • We introduce a model for the LIBS threshold that leads to more accurate determination of threshold values. • We provide results for a number of different solid samples. • The new setup could lead to the design of very compact (portable) and femtosecond-LIBS setups.