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Sample records for voltage operational amplifier

  1. Low-voltage CMOS operational amplifiers theory, design and implementation

    CERN Document Server

    Sakurai, Satoshi

    1995-01-01

    Low-Voltage CMOS Operational Amplifiers: Theory, Design and Implementation discusses both single and two-stage architectures. Opamps with constant-gm input stage are designed and their excellent performance over the rail-to-rail input common mode range is demonstrated. The first set of CMOS constant-gm input stages was introduced by a group from Technische Universiteit, Delft and Universiteit Twente, the Netherlands. These earlier versions of circuits are discussed, along with new circuits developed at the Ohio State University. The design, fabrication (MOSIS Tiny Chips), and characterization of the new circuits are now complete. Basic analog integrated circuit design concepts should be understood in order to fully appreciate the work presented. However, the topics are presented in a logical order and the circuits are explained in great detail, so that Low-Voltage CMOS Operational Amplifiers can be read and enjoyed by those without much experience in analog circuit design. It is an invaluable reference boo...

  2. A low-voltage sense amplifier with two-stage operational amplifier clamping for flash memory

    Science.gov (United States)

    Guo, Jiarong

    2017-04-01

    A low-voltage sense amplifier with reference current generator utilizing two-stage operational amplifier clamp structure for flash memory is presented in this paper, capable of operating with minimum supply voltage at 1 V. A new reference current generation circuit composed of a reference cell and a two-stage operational amplifier clamping the drain pole of the reference cell is used to generate the reference current, which avoids the threshold limitation caused by current mirror transistor in the traditional sense amplifier. A novel reference voltage generation circuit using dummy bit-line structure without pull-down current is also adopted, which not only improves the sense window enhancing read precision but also saves power consumption. The sense amplifier was implemented in a flash realized in 90 nm flash technology. Experimental results show the access time is 14.7 ns with power supply of 1.2 V and slow corner at 125 °C. Project supported by the National Natural Science Fundation of China (No. 61376028).

  3. Design of a high frequency low voltage CMOS operational amplifier

    Directory of Open Access Journals (Sweden)

    Priyanka Kakoty

    2011-03-01

    Full Text Available A method is presented in this paper for the design of a high frequency CMOS operational amplifier (Op-Amp which operates at 3V power supply using tsmc 0.18 micron CMOS technology. The OPAMPdesigned is a two-stage CMOS OPAMP followed by an output buffer. This Operational Transconductance Amplifier (OTA employs a Miller capacitor and is compensated with a current buffer compensation technique. The unique behaviour of the MOS transistors in saturation region not only allows a designer to work at a low voltage, but also at a high frequency. Designing of two-stage op-ampsis a multi-dimensional-optimization problem where optimization of one or more parameters may easily result into degradation of others. The OPAMP is designed to exhibit a unity gain frequency of 2.02GHzand exhibits a gain of 49.02dB with a 60.50 phase margin. As compared to the conventional approach, the proposed compensation method results in a higher unity gain frequency under the same load condition.Design has been carried out in Tanner tools. Simulation results are verified using S-edit and W-edit.

  4. Design of a high frequency low voltage CMOS operational amplifier

    Directory of Open Access Journals (Sweden)

    Priyanka Kakoty

    2011-03-01

    Full Text Available A method is presented in this paper for the design of a high frequency CMOS operational amplifier (Op-Amp which operates at 3V power supply using tsmc 0.18 micron CMOS technology. The OPAMPdesigned is a two-stage CMOS OPAMP followed by an output buffer. This OperationalTransconductance Amplifier (OTA employs a Miller capacitor and is compensated with a current buffercompensation technique. The unique behaviour of the MOS transistors in saturation region not onlyallows a designer to work at a low voltage, but also at a high frequency. Designing of two-stage op-ampsis a multi-dimensional-optimization problem where optimization of one or more parameters may easilyresult into degradation of others. The OPAMP is designed to exhibit a unity gain frequency of 2.02GHzand exhibits a gain of 49.02dB with a 60.50 phase margin. As compared to the conventional approach, theproposed compensation method results in a higher unity gain frequency under the same load condition.Design has been carried out in Tanner tools. Simulation results are verified using S-edit and W-edit.

  5. Design of low-voltage bipolar operational amplifiers

    Science.gov (United States)

    Fonderie, Jeroen

    The design of input stages for low voltage Operational Amplifiers (OpAmps) is considered. The purpose of this design emanates from the objective of having a common mode input voltage range that reaches from one supply rail to the other, and designs that have this feature both at a 2 V and at a 1 V supply are discussed. Possible output stage configurations are analyzed. This discussion is restricted to output stages that have an output voltage range that also reaches from rail to rail. Further, the output stage should be able to supply a sufficiently large output current to the load that is externally connected to the OpAmp. The frequency response of the output stage is the focus of the discussion. The circuit parts that remain to complete the design of the OpAmp are discussed. These circuit parts are the intermediate stage, inserted between the input and output stage to boost the overall gain of the OpAmp, some implementations of the class AB current control circuit, circuitry to protect the output transistor from heavy saturation and from excessive power consumption, and, finally, the proportional to absolute temperature reference current generator. A detailed analysis of the frequency compensation techniques that can be used to stabilize the OpAmp is given. From this theory, design criteria to successfully implement the compensation method are derived. The experimental OpAmp designs and the measurements performed on these designs are described. Conclusions and suggestions for further research are given.

  6. Operational amplifiers

    CERN Document Server

    Dostal, Jiri

    1993-01-01

    This book provides the reader with the practical knowledge necessary to select and use operational amplifier devices. It presents an extensive treatment of applications and a practically oriented, unified theory of operational circuits.Provides the reader with practical knowledge necessary to select and use operational amplifier devices. Presents an extensive treatment of applications and a practically oriented, unified theory of operational circuits

  7. Operational Amplifiers.

    Science.gov (United States)

    Foxcroft, G. E.

    1986-01-01

    Addresses the introduction of low cost equipment into high school and college physical science classes. Examines the properties of an "ideal" operational amplifier and discusses how it might be used under saturated and non-saturated conditions. Notes the action of a "real" operational amplifier. (TW)

  8. A novel low-voltage operational amplifier for low-power pipelined ADCs

    Energy Technology Data Exchange (ETDEWEB)

    Fan Mingjun; Ren Junyan; Guo Yao; Li Ning; Ye Fan; Li Lian, E-mail: 052052003@fudan.edu.c [State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433 (China)

    2009-01-15

    A novel low-voltage two-stage operational amplifier employing class-AB architecture is presented. The structure utilizes level-shifters and current mirrors to create the class-AB behavior in the first and second stages. With this structure, the transconductances of the two stages are double compared with the normal configuration without class-AB behaviors with the same current consumption. Thus power can be saved and the operation frequency can be increased. The nested cascode miller compensation and symmetric common-mode feedback circuits are used for large unit-gain bandwidth, good phase margin and stability. Simulation results show that the sample-and-hold of the 12-bit 40-Ms/s pipelined ADC using the proposed amplifier consumes only 5.8 mW from 1.2 V power supply with signal-to-noise-and-distortion ratio 89.5 dB, spurious-free dynamic range 95.7 dB and total harmonic distortion -94.3 dB with Nyquist input signal frequency.

  9. A novel low-voltage operational amplifier for low-power pipelined ADCs

    Science.gov (United States)

    Mingjun, Fan; Junyan, Ren; Yao, Guo; Ning, Li; Fan, Ye; Lian, Li

    2009-01-01

    A novel low-voltage two-stage operational amplifier employing class-AB architecture is presented. The structure utilizes level-shifters and current mirrors to create the class-AB behavior in the first and second stages. With this structure, the transconductances of the two stages are double compared with the normal configuration without class-AB behaviors with the same current consumption. Thus power can be saved and the operation frequency can be increased. The nested cascode miller compensation and symmetric common-mode feedback circuits are used for large unit-gain bandwidth, good phase margin and stability. Simulation results show that the sample-and-hold of the 12-bit 40-Ms/s pipelined ADC using the proposed amplifier consumes only 5.8 mW from 1.2 V power supply with signal-to-noise-and-distortion ratio 89.5 dB, spurious-free dynamic range 95.7 dB and total harmonic distortion -94.3 dB with Nyquist input signal frequency.

  10. New Voltage-Mode All-pass Filter Topology Employing Single Current Operational Amplifier

    Directory of Open Access Journals (Sweden)

    Hasan Çiçekli

    2016-02-01

    Full Text Available In this paper, a new voltage-mode all-pass filter topology based on single current operational amplifier (COA and the implementation of COA by using current conveyors are presented. The proposed topology employs three admittances and single active circuit element. COA implementation by using current conveyor blocks as sub-circuit contributes to workability of the COA employing circuits by using commercially available integrated circuits that can be employed as current conveyor. The validity of the proposed filter is verified by PSPICE simulation programme by using the MOSIS 0.35 micron CMOS process parameters. The simulation results agree well with the theoretical analysis and the circuit achieve a good total harmonic distortion (THD performance.

  11. An ultra-low voltage high gain operational transconductance amplifier for biomedical applications

    OpenAIRE

    Bautista, F.; Martınez, S.O.; Dieck, G.; Rossetto, O.

    2007-01-01

    special issue in one of the Eurasip journals (Hindawi Publishing Corporation); International audience; A novel differential-input single-output Operational Transconductance Amplifier (OTA) is presented in this paper. The topology proposed consists of an input stage based on a folded cascoded amplifier, and an output stage based on a current source amplifier and a bulk-driven current mirror. The simulations show that the amplifier has a 1.94¹W power dissipation, 92dB open-loop DC gain, a unit ...

  12. An operational amplifier B1404UD1A-1 in the patch-clamp current-to-voltage converter.

    Science.gov (United States)

    Korzun, A M; Rozinov, S V; Abashin, G I

    1997-01-01

    The applicability of the home-made operational amplifier B1404UD1A-1 in a patch-clamp current-to-voltage converter was analyzed. Its parameters (background noise, input bias current, and gain-bandwidth product) were estimated. Schematic solutions and practical recommendations for the use of this amplifier in a current-to-voltage converter were given. Based on the background noise and frequency parameters of the converter, we found that this device can be used for measuring ion channel currents with a high sensitivity and within a broad frequency range (0.055 pA, to 1 kHz; 0.4 pA, to 10 kHz). An example of the converter application in experiments is given.

  13. A current to voltage converter for cryogenics using a CMOS operational amplifier

    Science.gov (United States)

    Hayashi, K.; Saitoh, K.; Shibayama, Y.; Shirahama, K.

    2009-02-01

    We have constructed a versatile current to voltage (I-V) converter operating at liquid helium temperature, using a commercially available all-CMOS OPamp. It is valuable for cryogenic measurements of electrical current of nano-pico amperes, for example, in scanning probe microscopy. The I-V converter is thermally linked to liquid helium bath and self-heated up to 10.7 K. We have confirmed its capability of a transimpedance gain of 106 V/A and a bandwidth from DC to 200 kHz. In order to test the practical use for a frequency-modulation atomic force microscope, we have measured the resonance frequency shift of a quartz tuning fork at 32 kHz. In the operation of the I-V converter close to the sensor at liquid helium temperature, the signal-to-noise ratio has been improved to a factor of 13.6 compared to the operation at room temperature.

  14. Chaotic behaviors of operational amplifiers.

    Science.gov (United States)

    Yim, Geo-Su; Ryu, Jung-Wan; Park, Young-Jai; Rim, Sunghwan; Lee, Soo-Young; Kye, Won-Ho; Kim, Chil-Min

    2004-04-01

    We investigate nonlinear dynamical behaviors of operational amplifiers. When the output terminal of an operational amplifier is connected to the inverting input terminal, the circuit exhibits period-doubling bifurcation, chaos, and periodic windows, depending on the voltages of the positive and the negative power supplies. We study these nonlinear dynamical characteristics of this electronic circuit experimentally.

  15. Ultra-Low-Voltage Low-Power Bulk-Driven Quasi-Floating-Gate Operational Transconductance Amplifier

    Directory of Open Access Journals (Sweden)

    Ziad Alsibai

    2014-01-01

    Full Text Available A new ultra-low-voltage (LV low-power (LP bulk-driven quasi-floating-gate (BD-QFG operational transconductance amplifier (OTA is presented in this paper. The proposed circuit is designed using 0.18 μm CMOS technology. A supply voltage of ±0.3 V and a quiescent bias current of 5 μA are used. The PSpice simulation result shows that the power consumption of the proposed BD-QFG OTA is 13.4 μW. Thus, the circuit is suitable for low-power applications. In order to confirm that the proposed BD-QFG OTA can be used in analog signal processing, a BD-QFG OTA-based diodeless precision rectifier is designed as an example application. This rectifier employs only two BD-QFG OTAs and consumes only 26.8 μW.

  16. A current to voltage converter for cryogenics using a CMOS operational amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Hayashi, K; Saitoh, K; Shibayama, Y; Shirahama, K [Department of Physics, Keio University, Yokohama 223-8522 (Japan)], E-mail: khayashi@a2.keio.jp

    2009-02-01

    We have constructed a versatile current to voltage (I-V) converter operating at liquid helium temperature, using a commercially available all-CMOS OPamp. It is valuable for cryogenic measurements of electrical current of nano-pico amperes, for example, in scanning probe microscopy. The I-V converter is thermally linked to liquid helium bath and self-heated up to 10.7 K. We have confirmed its capability of a transimpedance gain of 10{sup 6} V/A and a bandwidth from DC to 200 kHz. In order to test the practical use for a frequency-modulation atomic force microscope, we have measured the resonance frequency shift of a quartz tuning fork at 32 kHz. In the operation of the I-V converter close to the sensor at liquid helium temperature, the signal-to-noise ratio has been improved to a factor of 13.6 compared to the operation at room temperature.

  17. Ultra-low Voltage CMOS Cascode Amplifier

    DEFF Research Database (Denmark)

    Lehmann, Torsten; Cassia, Marco

    2000-01-01

    In this paper, we design a folded cascode operational transconductance amplifier in a standard CMOS process, which has a measured 69 dB DC gain, a 2 MHz bandwidth and compatible input- and output voltage levels at a 1 V power supply. This is done by a novel Current Driven Bulk (CDB) technique...

  18. Programmable Voltage-Mode Multifunction Filter Using Two Current Conveyors and One Operational Transconductance Amplifier

    OpenAIRE

    Muhammad Taher Abuelma'atti; Azhar Quddus

    1996-01-01

    A new voltage-mode active-filter with single input and three outputs is presented. The parameters of the proposed filter are programmable and the filter uses grounded capacitors. The proposed circuit can simultaneously realize lowpass, highpass, and bandpass biquadratic filter functions and enjoys low temperature sensitivities.

  19. Oscillators and operational amplifiers

    DEFF Research Database (Denmark)

    Lindberg, Erik

    2005-01-01

    A generalized approach to the design of oscillators using operational amplifiers as active elements is presented. A piecewise-linear model of the amplifier is used so that it make sense to investigate the eigenvalues of the Jacobian of the differential equations. The characteristic equation...

  20. Offset Correction Techniques for Voltage Sense Amplifiers

    NARCIS (Netherlands)

    Groeneveld, S.

    2006-01-01

    This report deals with offset correction techniques for voltage sense amplifiers and is divided into two different parts: 1) mismatch and 2) offset correction techniques. First a literature study is done on the subject mismatch with specially focus on the future. Mismatch of a transistor is determin

  1. On-chip frequency compensation with a dual signal path operational transconductance amplifier for a voltage mode control DC/DC converter

    Science.gov (United States)

    Qiang, Ye; Jie, Liu; Bing, Yuan; Xinquan, Lai; Ning, Liu

    2012-04-01

    A novel on-chip frequency compensation circuit for a voltage-mode control DC/DC converter is presented. By employing an RC network in the two signal paths of an operational transconductance amplifier (OTA), the proposed circuit generates two zeros to realize high closed-loop stability. Meanwhile, full on-chip integration is also achieved due to its simple structure. Hence, the number of off-chip components and the board space is greatly reduced. The structure of the dual signal path OTA is also optimized to help get a better transition response. Implemented in a 0.5 μm CMOS process, the voltage mode control DC/DC converter with the proposed frequency compensation circuit exhibits good stability. The test results show that both load and line regulations are less than 0.3%, and the output voltage can be recovered within 15 μs for a 400 mA load step. Moreover, the compensation components area is less than 2% of the die's area and the board space is also reduced by 11%. The efficiency of the whole chip can be up to 95%.

  2. Multifunction Voltage-Mode Filter Using Single Voltage Differencing Differential Difference Amplifier

    Directory of Open Access Journals (Sweden)

    Chaichana Amornchai

    2017-01-01

    Full Text Available In this paper, a voltage mode multifunction filter based on single voltage differencing differential difference amplifier (VDDDA is presented. The proposed filter with three input voltages and single output voltage is constructed with single VDDDA, two capacitors and two resistors. Its quality factor can be adjusted without affecting natural frequency. Also, the natural frequency can be electronically tuned via adjusting of bias current. The filter can offer five output responses, high-pas (HP, band-pass (BP, band-reject (BR, low-pass (LP and all-ass (AP functions in the same circuit topology. The output response can be selected by choosing the suitable input voltage without the component matching condition and the requirement of additional double gain voltage amplifier. PSpice simulation results to confirm an operation of the proposed filter correspond to the theory.

  3. 基于低压高精度运放的带隙基准电压源设计%Design of Band-Gap Voltage Reference Based on Low Voltage and High Precision Operational Amplifier

    Institute of Scientific and Technical Information of China (English)

    黄静; 唐路; 陈庆; 施敏

    2012-01-01

    基于传统带隙基准源的电路结构,采用电平移位的折叠共源共栅输入级和甲乙类互补推挽共源输出级改进了其运算放大器的性能,并结合一阶温度补偿、电流负反馈技术设计了一款低温度系数、高电源电压抑制比(PSRR)的低压基准电压源.利用华润上华公司的CSMC 0.35 μm标准CMOS工艺对电路进行了Hspice仿真,该带隙基准源电路的电源工作范围为1.5~2.3 V,输出基准电压为(600±0.2) mV;工作温度为10 ~130 ℃,输出电压仅变化8μV,温度系数为1.86×10-6/℃,低频时PSRR为- 72 dB.实际流片进行测试,结果表明达到了预期结果.%A low voltage band-gap voltage reference with good temperature characteristics and high power supply rejection ratio ( PSRR) was designed by temperature compensation, current negative feedback and high performance operational amplifier technology. The improved operational amplifier, the core circuit of the voltage reference, was constituted with a folded-cascade input and a common-source output gain stage. This band-gap voltage reference was simulated by Hspice software with CSMC 0. 35 (xm CMOS process technology model. The results show that the output voltage of voltage reference is (600 ±0. 2) mV with the power operating from 1.5 V to 2. 3 V. The temperature coefficient is 1. 86 × 10-6/℃ with the temperature range from 10 ℃ to 130 ℃ and the output voltage only change is 8 μV. And the PSRR is -72 dB at low frequency. Test results are very consistent with the expected results.

  4. OFCC based voltage and transadmittance mode instrumentation amplifier

    Science.gov (United States)

    Nand, Deva; Pandey, Neeta; Pandey, Rajeshwari; Tripathi, Prateek; Gola, Prashant

    2017-07-01

    The operational floating current conveyor (OFCC) is a versatile active block due to the availability of both low and high input and output impedance terminals. This paper addresses the realization of OFCC based voltage and transadmittance mode instrumentation amplifiers (VMIA and TAM IA). It employs three OFCCs and seven resistors. The transadmittance mode operation can easily be obtained by simply connecting an OFCC based voltage to current converter at the output. The effect of non-idealities of OFCC, in particular finite transimpedance and tracking error, on system performance is also dealt with and corresponding mathematical expressions are derived. The functional verification is performed through SPICE simulation using CMOS based implementation of OFCC.

  5. Feedback analysis of transimpedance operational amplifier circuits

    DEFF Research Database (Denmark)

    Bruun, Erik

    1993-01-01

    The transimpedance or current feedback operational amplifier (CFB op-amp) is reviewed and compared to a conventional voltage mode op-amp using an analysis emphasizing the basic feedback characteristics of the circuit. With this approach the paradox of the constant bandwidth obtained from CFB op...

  6. High-frequency graphene voltage amplifier.

    Science.gov (United States)

    Han, Shu-Jen; Jenkins, Keith A; Valdes Garcia, Alberto; Franklin, Aaron D; Bol, Ageeth A; Haensch, Wilfried

    2011-09-14

    While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical vapor deposition grown graphene. The graphene field-effect transistor (GFET) has a 6-finger gate design with gate length of 500 nm. The graphene common-source amplifier exhibits ∼5 dB low frequency gain with the 3 dB bandwidth greater than 6 GHz. This first AC voltage gain demonstration of a GFET is attributed to the clear current saturation in the device, which is enabled by an ultrathin gate dielectric (4 nm HfO(2)) of the embedded gate structures. The device also shows extrinsic transconductance of 1.2 mS/μm at 1 V drain bias, the highest for graphene FETs using large-scale graphene reported to date.

  7. CNFET Based Voltage Differencing Transconductance Amplifier

    Science.gov (United States)

    Laxya; Prasad, Dinesh; Mainuddin; Islam, S. S.

    2017-08-01

    In CMOS Technology basic Problem mainly includes dopant fluctuation, tunnelling effect and line edge roughness below 45nm technology. Carbon Nanotube based structures is better option for widen the Moore’s law due to its scalability channel electrostatics and higher mobility. In this manuscript we demonstrate an optimum design for linear property of CNTFET based VDTA at 32nm technology node. The proposed circuit consist of VDTA with CNTFET having two voltage input and two current outputs so that it works as voltage and transconductance operation to obtain the high performance. The minimum supply voltages of ±0.9V with 32nm technology mode are used. The CNTFET-VDTA performance is simulated on HSPICE. In this paper CNFET-based VDTA provides better results of DC transfer characteristics as compared with CMOS. All the simulation results are performed on HSPICE.

  8. Operational amplifiers theory and design

    CERN Document Server

    Huijsing, Johan

    2017-01-01

    This proven textbook guides readers to a thorough understanding of the theory and design of operational amplifiers (OpAmps). The core of the book presents systematically the design of operational amplifiers, classifying them into a periodic system of nine main overall configurations, ranging from one gain stage up to four or more stages. This division enables circuit designers to recognize quickly, understand, and choose optimal configurations. Characterization of operational amplifiers is given by macro models and error matrices, together with measurement techniques for their parameters. Definitions are given for four types of operational amplifiers depending on the grounding of their input and output ports. Many famous designs are evaluated in depth, using a carefully structured approach enhanced by numerous figures. In order to reinforce the concepts introduced and facilitate self-evaluation of design skills, the author includes problems with detailed solutions, as well as simulation exercises. Provides te...

  9. PID Controller with Operational Amplifier

    Directory of Open Access Journals (Sweden)

    Cristian Paul Chioncel

    2009-01-01

    Full Text Available The paper presents a PID controller made with LM741 operational amplifier that implement the PID controllers laws and allow for a widerange of applications of in the field of automatic control of technicalprocesses and systems.

  10. Operational amplifier with adjustable frequency response.

    Science.gov (United States)

    Gulisek, D; Hencek, M

    1978-01-01

    The authors describe an operational amplifier with an adjustable frequency response and its use in membrane physiology, using the voltage clamp and current clamp method. The amplifier eliminates feedback poles causing oscillation. It consists of a follower with a high input resistance in the form of a tube and of an actual amplifier with an adjustable frequency response allowing the abolition of clicks by one pole and of oscillation by two poles in the 500 Hz divided by infinity range. Further properties of the amplifier: a long-term voltage drift of 1 mv, a temperature voltage drift of 0.5 mv/degrees K, input resistance greater than 1 GOhm, amplification greater than 80 dB, output +/- 12 v, 25 ma, noise, measured from the width of the oscilloscope track in the presence of a ray of normal brightness, not exceeding 50 muv in the 0-250 kHz band, f1 = 1 MHz. A short report on the amplifier was published a few years ago (Gulísek and Hencek 1973).

  11. Television-optical operational amplifier.

    Science.gov (United States)

    Goetz, J; Häusler, G; Sesselmann, R

    1979-08-15

    The advantages of negative feedback are well known in electronics and extensively used in the operational amplifier. The properties of such a system are nearly independent of the parameters in the forward branch of the system; they are only determined by external elements in the backward branch. An optical analog of such an operational amplifier is reported. The essential operations, amplifications, and inversion of the circulating signals are carried out using a TV system. The capability of the system to compensate for spatial inhomogeneities and for nonlinearities is demonstrated. In addition, the system is able to create the inverse of a transfer function located in the feedback branch.

  12. A High-Voltage Bipolar Transconductance Amplifier for Electrotactile Stimulation

    Science.gov (United States)

    Schaning, Matthew A.; Kaczmarek, Kurt A.

    2008-01-01

    This article describes a high-performance transconductance amplifier specifically designed for electrotactile (electrocutaneous) stimulation. It enables voltages up to ±600 V to be produced at the output which will allow the psychophysiological performance associated with stimulation of the fingertip using various stimulation waveforms to be studied more thoroughly. The design has a transconductance of up to 20 mA/V, an 8.8-MΩ output resistance, and can provide output currents up to ±20 mA. A complete schematic diagram is presented along with a discussion of theory of operation and safety issues as well as performance and derating plots from the implemented design. PMID:18838369

  13. Feedback analysis of transimpedance operational amplifier circuits

    OpenAIRE

    Bruun, Erik

    1993-01-01

    The transimpedance or current feedback operational amplifier (CFB op-amp) is reviewed and compared to a conventional voltage mode op-amp using an analysis emphasizing the basic feedback characteristics of the circuit. With this approach the paradox of the constant bandwidth obtained from CFB op-amps is explained. It is demonstrated in a simple manner that the constant gain-bandwidth product of the conventional op-amp and the constant bandwidth of the CFB op-amp are both in accordance with bas...

  14. Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

    DEFF Research Database (Denmark)

    Ljusev, Petar; Andersen, Michael Andreas E.

    2005-01-01

    This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify the design, increase...... efficiency, reduce the product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented....

  15. A Review of High Voltage Drive Amplifiers for Capacitive Actuators

    DEFF Research Database (Denmark)

    Huang, Lina; Zhang, Zhe; Andersen, Michael A. E.

    2012-01-01

    This paper gives an overview of the high voltage amplifiers, which are used to drive capacitive actuators. The amplifiers for both piezoelectric and DEAP (dielectric electroactive polymer) actuator are discussed. The suitable topologies for driving capacitive actuators are illustrated in detail, ......, including linear as well as switched mode amplifiers. In the past much attention has been paid on the driver for piezoelectric actuator. As DEAP is a type of new material, there is not much literature reference for it.......This paper gives an overview of the high voltage amplifiers, which are used to drive capacitive actuators. The amplifiers for both piezoelectric and DEAP (dielectric electroactive polymer) actuator are discussed. The suitable topologies for driving capacitive actuators are illustrated in detail...

  16. Wide-Temperature-Range Integrated Operational Amplifier

    Science.gov (United States)

    Mojarradi, Mohammad; Levanas, Greg; Chen, Yuan; Kolawa, Elizabeth; Cozy, Raymond; Blalock, Benjamin; Greenwell, Robert; Terry, Stephen

    2007-01-01

    A document discusses a silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) integrated- circuit operational amplifier to be replicated and incorporated into sensor and actuator systems of Mars-explorer robots. This amplifier is designed to function at a supply potential less than or equal to 5.5 V, at any temperature from -180 to +120 C. The design is implemented on a commercial radiation-hard SOI CMOS process rated for a supply potential of less than or equal to 3.6 V and temperatures from -55 to +110 C. The design incorporates several innovations to achieve this, the main ones being the following: NMOS transistor channel lengths below 1 m are generally not used because research showed that this change could reduce the adverse effect of hot carrier injection on the lifetimes of transistors at low temperatures. To enable the amplifier to withstand the 5.5-V supply potential, a circuit topology including cascade devices, clamping devices, and dynamic voltage biasing was adopted so that no individual transistor would be exposed to more than 3.6 V. To minimize undesired variations in performance over the temperature range, the transistors in the amplifier are biased by circuitry that maintains a constant inversion coefficient over the temperature range.

  17. Limit circuit prevents overdriving of operational amplifier

    Science.gov (United States)

    Openshaw, F. L.

    1967-01-01

    Cutoff-type high gain amplifier coupled by a diode prevents overdriving of operational amplifier. An amplified feedback signal offsets the excess input signal that tends to cause the amplifier to exceed its preset limit. The output is, therfore, held to the set clamp level.

  18. Bio-isolated DC operational amplifier

    Science.gov (United States)

    Lee, R. D.

    1974-01-01

    Possibility of shocks from leakage currents can be reduced by use of isolated preamplifiers. Amplifier consists of battery-powered operational amplifier coupled by means of light-emitting diodes to another amplifier which may be grounded and operated from ac power mains or separate battery supply.

  19. Class D audio amplifiers for high voltage capacitive transducers

    DEFF Research Database (Denmark)

    Nielsen, Dennis

    voltage capacitive transducers can be constructed with THD+N below 0.1 % and peak efficiency above 80 %. However the complexity of the amplifier combined with the current high cost of components, makes the technology of DEAP based loudspeaker unfeasible. Suggestions to future work in the pursuit...... of high volume, weight, and cost. High efficient class D amplifiers are now widely available offering power densities, that their linear counterparts can not match. Unlike the technology of audio amplifiers, the loudspeaker is still based on the traditional electrodynamic transducer invented by C.W. Rice....... Due to the similarities between the electrostatic loudspeaker and the DEAP transducer, the state-of-the-art has a special focus on amplifiers for electrostatic loudspeakers. Amplifiers for other type of capacitive transducers like piezoelectric ones are also considered. Finally the current state...

  20. A CMOS current-mode operational amplifier

    DEFF Research Database (Denmark)

    Kaulberg, Thomas

    1993-01-01

    A fully differential-input, differential-output, current-mode operational amplifier (COA) is described. The amplifier utilizes three second-generation current conveyors (CCIIs) as the basic building blocks. It can be configured to provide either a constant gain-bandwidth product in a fully balanced...... current-mode feedback amplifier or a constant bandwidth in a transimpedance feedback amplifier. The amplifier is found to have a gain-bandwidth product of 3 MHz, an offset current of 0.8 μA (signal range ±700 μA), and a (theoretically) unlimited slew rate. The amplifier is realized in a standard CMOS 2...

  1. CMOS Current-mode Operational Amplifier

    DEFF Research Database (Denmark)

    Kaulberg, Thomas

    1992-01-01

    A fully differential-input differential-output current-mode operational amplifier (COA) is described. The amplifier utilizes three second generation current-conveyors (CCII) as the basic building blocks. It can be configured to provide either a constant gain-bandwidth product in a fully balanced...... current-mode feedback amplifier or a constant bandwidth in a transimpedance feedback amplifier. The amplifier is found to have a gain bandwidth product of 8 MHz, an offset current of 0.8 ¿A (signal-range ±700¿A) and a (theoretically) unlimited slew-rate. The amplifier is realized in a standard CMOS 2...

  2. Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.; Andersen, Michael A.E.

    2005-07-01

    This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify design, increase efficiency and integration level, reduce product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented. (au)

  3. New Simple CMOS Realization of Voltage Differencing Transconductance Amplifier and Its RF Filter Application

    Directory of Open Access Journals (Sweden)

    A. Yeşil

    2011-09-01

    Full Text Available The voltage differencing transconductance amplifier (VDTA is a recently introduced active element for analog signal processing. However, the realization of VDTA is not given by any author yet. In this work, a new and simple CMOS realization of VDTA is presented. The proposed block has two voltage inputs and two kinds of current output, so it is functional for voltage- and transconductance-mode operation. Furthermore, VDTA exhibits two different values of transconductance so that there is no need to external resistors for VDTA based applications which seems to be a good advantage for analog circuit designer. A CMOS implementation of VDTA and a voltage-mode VDTA based filter are proposed and simulated. An application example of fourth order flat-band band-pass amplifier is given and the performance of the circuit is demonstrated by comparing the theory and simulation.

  4. Operational Amplifier Experiments for the Chemistry Laboratory.

    Science.gov (United States)

    Braun, Robert D.

    1996-01-01

    Provides details of experiments that deal with the use of operational amplifiers and are part of a course in instrumental analysis. These experiments are performed after the completion of a set of electricity and electronics experiments. (DDR)

  5. Third Order Universal Filter Using Single Operational Transresistance Amplifier

    Directory of Open Access Journals (Sweden)

    Mourina Ghosh

    2013-01-01

    Full Text Available This paper proposes a multi-input single-output (MISO third order voltage mode (VM universal filter using only one operational transresistance amplifier (OTRA. The proposed circuit realizes low-pass, high-pass, all-pass, band-pass, and notch responses from the same topology. The PSPICE Simulation results using 0.5 μm CMOS technology agree well with the theoretical design.

  6. Operational amplifier circuits analysis and design

    CERN Document Server

    Nelson, J C C

    1995-01-01

    This book, a revised and updated version of the author's Basic Operational Amplifiers (Butterworths 1986), enables the non-specialist to make effective use of readily available integrated circuit operational amplifiers for a range of applications, including instrumentation, signal generation and processing.It is assumed the reader has a background in the basic techniques of circuit analysis, particularly the use of j notation for reactive circuits, with a corresponding level of mathematical ability. The underlying theory is explained with sufficient but not excessive, detail. A range of compu

  7. Design of High-Voltage Switch-Mode Power Amplifier Based on Digital-Controlled Hybrid Multilevel Converter

    Directory of Open Access Journals (Sweden)

    Yanbin Hou

    2016-01-01

    Full Text Available Compared with conventional Class-A, Class-B, and Class-AB amplifiers, Class-D amplifier, also known as switching amplifier, employs pulse width modulation (PWM technology and solid-state switching devices, capable of achieving much higher efficiency. However, PWM-based switching amplifier is usually designed for low-voltage application, offering a maximum output voltage of several hundred Volts. Therefore, a step-up transformer is indispensably adopted in PWM-based Class-D amplifier to produce high-voltage output. In this paper, a switching amplifier without step-up transformer is developed based on digital pulse step modulation (PSM and hybrid multilevel converter. Under the control of input signal, cascaded power converters with separate DC sources operate in PSM switch mode to directly generate high-voltage and high-power output. The relevant topological structure, operating principle, and design scheme are introduced. Finally, a prototype system is built, which can provide power up to 1400 Watts and peak voltage up to ±1700 Volts. And the performance, including efficiency, linearity, and distortion, is evaluated by experimental tests.

  8. High-Performance Operational and Instrumentation Amplifiers

    NARCIS (Netherlands)

    Shahi, B.

    2015-01-01

    This thesis describes techniques to reduce the offset error in precision instrumentation and operational amplifiers. The offset error which is considered a major error source associated with gain blocks, together with other errors are reviewed. Conventional and newer approaches to remove offset and

  9. Slew Rate and Step Response of the Noninverting Structure with an Operational Amplifier

    Directory of Open Access Journals (Sweden)

    Josef Puncochar

    2004-01-01

    Full Text Available When a large-step input voltage is applied to an operational amplifier (OP AMP input, the output waveform reises with a finite slope called the slex rate which is due to an amplifier input stage current limiting (Im and because of a compensating capacitor Ck. We will solve this step response for large-step input voltages which cannot be done by means of the linear analysis only.

  10. High-Performance Operational and Instrumentation Amplifiers

    OpenAIRE

    Shahi, B.

    2015-01-01

    This thesis describes techniques to reduce the offset error in precision instrumentation and operational amplifiers. The offset error which is considered a major error source associated with gain blocks, together with other errors are reviewed. Conventional and newer approaches to remove offset and low frequency noise are discussed, with a focus on the work of this thesis “Chopper-Stabilized Auto-Zeroed Chopper Instrumentation Amplifiers”. The technique is demonstrated through the application...

  11. A new low-voltage and high-speed sense amplifier for flash memory

    Institute of Scientific and Technical Information of China (English)

    Guo Jiarong; Ran Feng

    2011-01-01

    A new low-voltage and high-speed sense amplifier is presented,based on a very simple direct currentmode comparison.It adopts low-voltage reference current extraction and a dynamic output method to realize its performance indicators such as low voltage,low power and high precision.The proposed amplifier can sense a 0.5 μA current gap and work with a lowest voltage of 1 V.In addition,the current power of a single amplifier is optimized by 15%.

  12. Radiation and annealing effects on integrated bipolar Operational Amplifier

    Science.gov (United States)

    Assaf, J.

    2017-02-01

    Integrated bipolar Operational Amplifier (op-amp) type μA 741 was irradiated with neutrons and gamma rays. The radiation on gain factors, slew rate, and power supply current have been evaluated. The experimental results show a decrease of these parameter values after exposing to the radiation. The advantage of the increase of the voltage power supplies and the thermal annealing treatment on the damaged parameters was also explored. The relationship among different frequency response parameters is also studied leading to an analytical formula for the above degraded parameters.

  13. Smartphone Operated Signal Transduction by Ion Nanogating (STING) Amplifier for Nanopore Sensors: Design and Analytical Application

    Science.gov (United States)

    Özel, Rıfat Emrah; Kahnemouyi, Sina; Fan, Hsinwen; Mak, Wai Han; Lohith, Akshar; Seger, Adam; Teodorescu, Mircea; Pourmand, Nader

    2016-01-01

    In this report, we demonstrated a handheld wireless voltage-clamp amplifier for current measurement of nanopore sensors. This amplifier interfaces a sensing probe and connects wirelessly with a computer or smartphone for the required stimulus input, data processing and storage. To test the proposed Signal Transduction by Ion Nanogating (STING) wireless amplifier, in the current study the system was tested with a nano-pH sensor to measure pH of standard buffer solutions and the performance was compared against the commercial voltage-clamp amplifier. To our best knowledge, STING amplifier is the first miniaturized wireless voltage-clamp platform operated with a customized smart-phone application (app). PMID:27602408

  14. Bio-isolated dc operational amplifier. [for bioelectric measurements

    Science.gov (United States)

    Lee, R. D. (Inventor)

    1974-01-01

    A bio-isolated dc operational amplifier is described for use in making bioelectrical measurements of a patient while providing isolation of the patient from electrical shocks. The circuit contains a first operational amplifier coupled to the patient with its output coupled in a forward loop through a first optic coupler to a second operational amplifier. The output of the second operational amplifier is coupled to suitable monitoring circuitry via a feedback circuit including a second optic coupler to the input of the first operational amplifier.

  15. Efficient Slew-Rate Enhanced Operational Transconductance Amplifier

    Institute of Scientific and Technical Information of China (English)

    Xiao-Peng Wan; Fei-Xiang Zhang; Shao-Wei Zhen; Ya-Juan He; Ping Luo

    2015-01-01

    Abstract⎯Today, along with the prevalent use of portable equipment, wireless, and other battery powered systems, the demand for amplifiers with a high gain-bandwidth product (GBW), slew rate (SR), and at the same time very low static power dissipation is growing. In this work, an operational transconductance amplifier (OTA) with an enhanced SR is proposed. By inserting a sensing resistor in the input port of the current mirror in the OTA, the voltage drop across the resistor is converted into an output current containing a term in proportion to the square of the voltage, and then the SR of the proposed OTA is significantly enhanced and the current dissipation can be reduced. The proposed OTA is designed and simulated with a 0.5μm complementary metal oxide semiconductor (CMOS) process. The simulation results show that the SR is 4.54 V/μs, increased by 8.25 times than that of the conventional design, while the current dissipation is only 87.3%.

  16. Operational amplifier speed and accuracy improvement analog circuit design with structural methodology

    CERN Document Server

    Ivanov, Vadim V

    2004-01-01

    Operational Amplifier Speed and Accuracy Improvement proposes a new methodology for the design of analog integrated circuits. The usefulness of this methodology is demonstrated through the design of an operational amplifier. This methodology consists of the following iterative steps: description of the circuit functionality at a high level of abstraction using signal flow graphs; equivalent transformations and modifications of the graph to the form where all important parameters are controlled by dedicated feedback loops; and implementation of the structure using a library of elementary cells. Operational Amplifier Speed and Accuracy Improvement shows how to choose structures and design circuits which improve an operational amplifier's important parameters such as speed to power ratio, open loop gain, common-mode voltage rejection ratio, and power supply rejection ratio. The same approach is used to design clamps and limiting circuits which improve the performance of the amplifier outside of its linear operat...

  17. High-Voltage class-D power amplifiers: design and optimization

    NARCIS (Netherlands)

    Ma, H.

    2015-01-01

    ABSTRACT Nowadays transducers are ubiquitous as interfaces between the increasingly digital world and the real physical world. The same holds for the power amplifiers driving them. This thesis focuses on the design and optimization of high-voltage class-D amplifiers, which are used for driving

  18. Current feedback operational amplifiers and their applications

    CERN Document Server

    Senani, Raj; Singh, A K; Singh, V K

    2013-01-01

    This book describes a variety of current feedback operational amplifier (CFOA) architectures and their applications in analog signal processing/generation. Coverage includes a comprehensive survey of commercially available, off-the-shelf integrated circuit CFOAs, as well as recent advances made on the design of CFOAs, including design innovations for bipolar and CMOS CFOAs.  This book serves as a single-source reference to the topic, as well as a catalog of over 200 application circuits which would be useful not only for students, educators and researchers in apprising them about the recent developments in the area but would also serve as a comprehensive repertoire of useful circuits for practicing engineers who might be interested in choosing an appropriate CFOA-based topology for use in a given application.

  19. SEMICONDUCTOR INTEGRATED CIRCUITS A low-voltage sense amplifier for high-performance embedded flash memory

    Science.gov (United States)

    Jiang, Liu; Xueqiang, Wang; Qin, Wang; Dong, Wu; Zhigang, Zhang; Liyang, Pan; Ming, Liu

    2010-10-01

    This paper presents a sense amplifier scheme for low-voltage embedded flash (eFlash) memory applications. The topology of the sense amplifier is based on current mode comparison. Moreover, an offset-voltage elimination technique is employed to improve the sensing performance under a small memory cell current. The proposed sense amplifier is designed based on a GSMC 130 nm eFlash process, and the sense time is 0.43 ns at 1.5 V, corresponding to a 46% improvement over the conventional technologies.

  20. Cascaded transformerless DC-DC voltage amplifier with optically isolated switching devices

    Science.gov (United States)

    Sridharan, Govind (Inventor)

    1993-01-01

    A very high voltage amplifier is provided in which plural cascaded banks of capacitors are switched by optically isolated control switches so as to be charged in parallel from the preceding stage or capacitor bank and to discharge in series to the succeeding stage or capacitor bank in alternating control cycles. The optically isolated control switches are controlled by a logic controller whose power supply is virtually immune to interference from the very high voltage output of the amplifier by the optical isolation provided by the switches, so that a very high voltage amplification ratio may be attained using many capacitor banks in cascade.

  1. Design and Implementation of Schmitt Trigger using Operational Amplifier

    Directory of Open Access Journals (Sweden)

    Md. Moyeed Abrar

    2017-01-01

    Full Text Available A Schmitt trigger is an electronic circuit, a Comparator that is used to detect whether a voltage has crossed over a given reference level. It has two stable states and is very useful as signal conditioning device. When an input waveform in the form of sinusoidal waveform, triangular waveform, or any other periodic waveform is given, the Schmitt trigger will produce a Rectangular or square output waveform that has sharp leading and trailing edges. Such fast rise and fall times are desirable for all digital circuits. The state of the art presented in the paper is the design and implementation of Schmitt trigger using operational amplifier µA-741, generating a Rectangular waveform. Furthermore, the Schmitt trigger exhibiting hysteresis is also presented in the paper. Due to the phenomenon of hysteresis, the output transition from HIGH to LOW and LOW to HIGH will take place at various thresholds

  2. Comparative Study of Si and SiC MOSFETs for High Voltage Class D Audio Amplifiers

    DEFF Research Database (Denmark)

    Nielsen, Dennis; Knott, Arnold; Andersen, Michael A. E.

    2014-01-01

    Silicon (Si) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are traditional utilised in class D audio amplifiers. It has been proposed to replace the traditional inefficient electrodynamic transducer with the electrostatic transducer. This imposes new high voltage requirements...... on the MOSFETs of class D amplifiers, and significantly reduces the selection of suitable MOSFETs. As a consequence it is investigated, if Silicon-Carbide (SiC) MOSFETs could represent a valid alternative. The theory of pulse timing errors are revisited for the application of high voltage and capactive loaded...... class D amplifiers. It is shown, that SiC MOSFETs can compete with Si MSOFETs in terms of THD. Validation is done using simulations and a 500 V amplifier driving a 100 nF load. THD+N below 0.3 % is reported...

  3. A Gallium Arsenide MESFET Operational Amplifier for Use in Composite Operational Amplifiers

    Science.gov (United States)

    1993-12-01

    F., Operational Amplifiers and Linear Integrated Circuits, 4th ed., Prentice Hall, 1991. 6. Sedra , A. S., and Smith , K. C., Microelectronic Circuits...7, pp. 1422-1429, July 1992. 17. McCamant, A. J., McCormack G. D., and Smith , D. H., "An Improved GaAs MESFET Model for SPICE," IEEE Transactions of...34Modeling Frequency Dependence of out Impedance of a Microwave MESFET at Low Frequencies," Electronics Letters, pp. 528-529, June 1985. 39. Smith , M. et al

  4. Maximally Flat Waveforms Operation of Class-F Power Amplifiers

    Directory of Open Access Journals (Sweden)

    V. Krizhanovski

    2001-04-01

    Full Text Available The requirements to output network's impedance on higher harmoniccomponents and appropriate input driving for formation maximally flatwaveforms of drain current and voltage were presented. Using suchwaveforms allows obtaining maximal efficiency and output powercapability of class-F power amplifiers.

  5. Autonomous Operation of Low Voltage Microgrids

    Directory of Open Access Journals (Sweden)

    Irena Wasiak

    2014-12-01

    Full Text Available The article describes the possibilities of LV microgrids operation in the island mode. Control strategies of energy sources connected to the grid by means of invertors are discussed, either for a microgrid connected to the supplying network or during the island mode operation. The presented results of research were conducted at the Laboratory of Distributed Generation at Lodz University of Technology. The study was performed for two variants of reference voltage source: the battery storage and microturbine respectively.

  6. Wide-temperature integrated operational amplifier

    Science.gov (United States)

    Mojarradi, Mohammad (Inventor); Levanas, Greg (Inventor); Chen, Yuan (Inventor); Cozy, Raymond S. (Inventor); Greenwell, Robert (Inventor); Terry, Stephen (Inventor); Blalock, Benjamin J. (Inventor)

    2009-01-01

    The present invention relates to a reference current circuit. The reference circuit comprises a low-level current bias circuit, a voltage proportional-to-absolute temperature generator for creating a proportional-to-absolute temperature voltage (VPTAT), and a MOSFET-based constant-IC regulator circuit. The MOSFET-based constant-IC regulator circuit includes a constant-IC input and constant-IC output. The constant-IC input is electrically connected with the VPTAT generator such that the voltage proportional-to-absolute temperature is the input into the constant-IC regulator circuit. Thus the constant-IC output maintains the constant-IC ratio across any temperature range.

  7. Four-quadrant analogue multiplier using operational amplifier

    Science.gov (United States)

    Riewruja, Vanchai; Rerkratn, Apinai

    2011-04-01

    A method to realise a four-quadrant analogue multiplier using general-purpose operational amplifiers (opamps) as only the active elements is described in this article. The realisation method is based on the quarter-square technique, which utilises the inherent square-law characteristic of class AB output stage of the opamp. The multiplier can be achieved from the proposed structure with using either bipolar or complementary metal-oxide-semiconductor (CMOS) opamps. The operation principle of the proposed multiplier has been confirmed by PSPICE analogue simulation program. Simulation results reveal that the principle of proposed scheme provides an adequate performance for a four-quadrant analogue multiplier. Experimental implementations of the proposed multiplier using bipolar and CMOS opamps are performed to verify the circuit performances. Measured results of the experimental proposed schemes based on the use of bipolar and CMOS opamps with supply voltage ±2.4 V show the worst-case relative errors of 0.32% and 0.47%, and the total harmonic distortions of 0.47% and 0.98%, respectively.

  8. Chopper amplifier circuit with CMOS switches and amplifier FETs

    NARCIS (Netherlands)

    Huijsing, J.H.; Bakker, A.

    1997-01-01

    Abstract of NL 1001231 (C2) The input voltage is fed to the inputs of an operational amplifier via a chopping reversal switchThe CMOS operational amplifier has a current source and a current mirror. The operational amplifier output is fed to an output circuit. The possible offset voltage is supp

  9. Design procedure for optimizing CMOS low noise operational amplifiers

    Institute of Scientific and Technical Information of China (English)

    Li Zhiyuan; Ye Yizheng; Ma Jianguo

    2009-01-01

    This paper presents and experimentally verifies an optimized design procedure for a CMOS low noise operational amplifier.The design procedure focuses on the noise performance,which is the key requirement for low noise operational amplifiers.Based on the noise level and other specifications such as bandwidth,signal swing,slew rate,and power consumption,the device sizes and the biasing conditions are derived.In order to verify the proposed design procedure,a three-stage operational amplifier has been designed.The device parameters obtained from the proposed design procedure closely agree with the simulated results obtained by using HSPICE.

  10. Low voltage operation of plasma focus.

    Science.gov (United States)

    Shukla, Rohit; Sharma, S K; Banerjee, P; Das, R; Deb, P; Prabahar, T; Das, B K; Adhikary, B; Shyam, A

    2010-08-01

    Plasma foci of compact sizes and operating with low energies (from tens of joules to few hundred joules) have found application in recent years and have attracted plasma-physics scientists and engineers for research in this direction. We are presenting a low energy and miniature plasma focus which operates from a capacitor bank of 8.4 muF capacity, charged at 4.2-4.3 kV and delivering approximately 52 kA peak current at approximately 60 nH calculated circuit inductance. The total circuit inductance includes the plasma focus inductance. The reported plasma focus operates at the lowest voltage among all reported plasma foci so far. Moreover the cost of capacitor bank used for plasma focus is nearly 20 U.S. dollars making it very cheap. At low voltage operation of plasma focus, the initial breakdown mechanism becomes important for operation of plasma focus. The quartz glass tube is used as insulator and breakdown initiation is done on its surface. The total energy of the plasma focus is approximately 75 J. The plasma focus system is made compact and the switching of capacitor bank energy is done by manual operating switch. The focus is operated with hydrogen and deuterium filled at 1-2 mbar.

  11. A high-speed CMOS current op amp for very low supply voltage operation

    DEFF Research Database (Denmark)

    Bruun, Erik

    1994-01-01

    A CMOS implementation of a high-gain current mode operational amplifier (op amp) with a single-ended input and a differential output is described. This configuration is the current mode counterpart of the traditional voltage mode op amp. In order to exploit the inherent potential for high speed......, low voltage operation normally associated with current mode analog signal processing, the op amp has been designed to operate off a supply voltage of 1.5 V, and the signal path has been confined to N-channel transistors. With this design, a gain of 94 dB and a gain-bandwidth product of 65 MHz has been...

  12. High-gain cryogenic amplifier assembly employing a commercial CMOS operational amplifier.

    Science.gov (United States)

    Proctor, J E; Smith, A W; Jung, T M; Woods, S I

    2015-07-01

    We have developed a cryogenic amplifier for the measurement of small current signals (10 fA-100 nA) from cryogenic optical detectors. Typically operated with gain near 10(7) V/A, the amplifier performs well from DC to greater than 30 kHz and exhibits noise level near the Johnson limit. Care has been taken in the design and materials to control heat flow and temperatures throughout the entire detector-amplifier assembly. A simple one-board version of the amplifier assembly dissipates 8 mW to our detector cryostat cold stage, and a two-board version can dissipate as little as 17 μW to the detector cold stage. With current noise baseline of about 10 fA/(Hz)(1/2), the cryogenic amplifier is generally useful for cooled infrared detectors, and using blocked impurity band detectors operated at 10 K, the amplifier enables noise power levels of 2.5 fW/(Hz)(1/2) for detection of optical wavelengths near 10 μm.

  13. Design of an Operational Amplifier for High Performance Pipelined ADCs in 65nm CMOS

    OpenAIRE

    Payami, Sima

    2012-01-01

    In this work, a fully differential Operational Amplifier (OpAmp) with high Gain-Bandwidth (GBW), high linearity and Signal-to-Noise ratio (SNR) has been designed in 65nm CMOS technology with 1.1v supply voltage. The performance of the OpAmp is evaluated using Cadence and Matlab simulations and it satisfies the stringent requirements on the amplifier to be used in a 12-bit pipelined ADC. The open-loop DC-gain of the OpAmp is 72.35 dB with unity-frequency of 4.077 GHz. Phase-Margin (PM) of the ...

  14. Amplifier circuit operable over a wide temperature range

    Science.gov (United States)

    Kelly, Ronald D.; Cannon, William L.

    1979-01-01

    An amplifier circuit having stable performance characteristics over a wide temperature range from approximately 0.degree. C up to as high as approximately 500.degree. C, such as might be encountered in a geothermal borehole. The amplifier utilizes ceramic vacuum tubes connected in directly coupled differential amplifier pairs having a common power supply and a cathode follower output stage. In an alternate embodiment, for operation up to 500.degree. C, positive and negative power supplies are utilized to provide improved gain characteristics, and all electrical connections are made by welding. Resistor elements in this version of the invention are specially heat treated to improve their stability with temperature.

  15. Cross-differential amplifier

    Science.gov (United States)

    Hajimiri, Seyed-Ali (Inventor); Kee, Scott D. (Inventor); Aoki, Ichiro (Inventor)

    2013-01-01

    A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.

  16. Improved-Bandwidth Transimpedance Amplifier

    Science.gov (United States)

    Chapsky, Jacob

    2009-01-01

    The widest available operational amplifier, with the best voltage and current noise characteristics, is considered for transimpedance amplifier (TIA) applications where wide bandwidth is required to handle fast rising input signals (as for time-of-flight measurement cases). The added amplifier inside the TIA feedback loop can be configured to have slightly lower voltage gain than the bandwidth reduction factor.

  17. A novel fully differential telescopic operational transconductance amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Li Tianwang; Jiang Jinguang [Department of Integrated Circuits and Communication Software, International School of Software, Wuhan University, Wuhan 430079 (China); Ye Bo, E-mail: jgjiang95@yahoo.com.c [Faculty of Computer and Information Engineering, Shanghai University of Electric Power, Shanghai 200090 (China)

    2009-08-15

    A novel fully differential telescopic operational transconductance amplifier (OTA) is proposed. An additional PMOS differential pair is introduced to improve the unit-gain bandwidth of the telescopic amplifier. At the same time, the slew rate is enhanced by the auxiliary slew rate boost circuits. The proposed OTA is designed in a 0.18{mu}m CMOS process. Simulation results show that there is a 49% improvement in the unit-gain bandwidth compared to that of a conventional OTA; moreover, the DC gain and the slew rate are also enhanced. (semiconductor integrated circuits)

  18. A sub-0.5 V operating RF low noise amplifier using tunneling-FET

    Science.gov (United States)

    Jhon, Hee-Sauk; Jeon, Jongwook; Kang, Myunggon; Choi, Woo Young

    2017-02-01

    60 nm tunneling FET (TFET) based low noise amplifier (LNA) with a sub-0.5 V supply voltage for 2.4 GHz WSN application has been evaluated systematically from device level up to circuit level design. With the help of TFET’s unique property of high subthreshold swing, it shows that substantial increase of gain performance was confirmed compared to that of conventional LNA using 60 nm bulk MOSFET at ultra-low voltage (ULV) condition. From the simulation study, TFET LNA at 0.4 V operating voltage has the gain of 15.1 dB and noise figure 50 of 3.5 dB while dissipating DC power consumption of 0.41 mW.

  19. Performance of High Temperature Operational Amplifier, Type LM2904WH, under Extreme Temperatures

    Science.gov (United States)

    Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

    2008-01-01

    Operation of electronic parts and circuits under extreme temperatures is anticipated in NASA space exploration missions as well as terrestrial applications. Exposure of electronics to extreme temperatures and wide-range thermal swings greatly affects their performance via induced changes in the semiconductor material properties, packaging and interconnects, or due to incompatibility issues between interfaces that result from thermal expansion/contraction mismatch. Electronics that are designed to withstand operation and perform efficiently in extreme temperatures would mitigate risks for failure due to thermal stresses and, therefore, improve system reliability. In addition, they contribute to reducing system size and weight, simplifying its design, and reducing development cost through the elimination of otherwise required thermal control elements for proper ambient operation. A large DC voltage gain (100 dB) operational amplifier with a maximum junction temperature of 150 C was recently introduced by STMicroelectronics [1]. This LM2904WH chip comes in a plastic package and is designed specifically for automotive and industrial control systems. It operates from a single power supply over a wide range of voltages, and it consists of two independent, high gain, internally frequency compensated operational amplifiers. Table I shows some of the device manufacturer s specifications.

  20. Single-mode operation of a coiled multimode fiber amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Jeffrey P. Koplow; Dahv A. V. Kliner; Lew Goldberg

    2000-01-19

    The authors report a new approach to obtain single-transverse-mode operation of a multimode fiber amplifier, in which the gain fiber is coiled to induce significant bend loss for all but the lowest-order mode. They have demonstrated this method by constructing a coiled amplifier using Yb-doped, double-clad fiber with a core diameter of 25 {micro}m and NA of {minus}0.1 (V {approx} 7.4). When operated as an ASE source, the output beam had an M{sup 2} value of 1.09 {+-} 0.09; when seeded at 1,064 nm, the slope efficiency was similar to that of an uncoiled amplifier. This technique does not require exotic fiber designs or increase system complexity and is inexpensive to implement. It will allow scaling of pulsed fiber lasers and amplifiers to significantly higher pulse energies and peak powers and cw fiber sources to higher average powers while maintaining excellent beam quality.

  1. Grounded Capacitor Oscillators Using A Single Operational Transconductance Amplifier

    OpenAIRE

    Muhammad Taher Abuelma'atti; Muhammad Haroon Khan

    1996-01-01

    New oscillator circuits using operational transconductance amplifiers (OTAs) are presented. Each circuit uses a single OTA and grounded capacitors. The feasibility of obtaining oscillators with independent control of frequency and oscillation is considered. Also, the feasibility of exploiting, to advantage, the frequency dependence of the OTA-transconductance is considered. This may result in OTA-based RC oscillators using only one externally-connected capacitor.

  2. Processing of Communication Signal Using Operational Transconductance Amplifier

    OpenAIRE

    Roy, A.; Ghosh, K.; Mondal, S; Ray, B. N.

    2010-01-01

    This paper proposes a signal processing methodology of communication system and realized that circuits using operational transconductance amplifier (OTA). Two important classes of communication circuit, delta modulator and compander have been designed using that procedure. In the first implementation coded pulse modulation system is demonstrated which employ sampling, quantizing and coding to convert analog waveforms to digital signals while the second gives data compression and expansion in ...

  3. Charge-Sensitive Front-End Electronics with Operational Amplifiers for CdZnTe Detectors

    CERN Document Server

    Födisch, P; Lange, B; Kirschke, T; Enghardt, W; Kaever, P

    2016-01-01

    Cadmium zinc telluride (CdZnTe, "CZT") radiation detectors are announced to be a game-changing detector technology. However, state-of-the-art detector systems require high-performance readout electronics as well. Even though an application-specific integrated circuit (ASIC) is an adequate solution for the readout, our demands on a high dynamic range for energy measurement and a high throughput are not served by any commercially available circuit. Consequently, we had to develop the analog front-end electronics with operational amplifiers for an 8x8 pixelated CZT detector. For this purpose, we model an electrical equivalent circuit of the CZT detector with the associated charge-sensitive amplifier (CSA). Therefore, we present the mathematical equations for a detailed network analysis. Additionally, we enhance the design with numerical values for various features such as ballistic deficit, charge-to-voltage gain, rise time, noise level and verify the performance with synthetic detector signals. With this benchm...

  4. Design of an operational transconductance amplifier applying multiobjective optimization techniques

    Directory of Open Access Journals (Sweden)

    Roberto Pereira-Arroyo

    2014-02-01

    Full Text Available In this paper, the problem at hand consists in the sizing of an Operational Transconductance Amplifier (OTA. The Pareto front is introduced as a useful analysis concept in order to explore the design space of such analog circuit. A genetic algorithm (GA is employed to automatically detect this front in a process that efficiently finds optimal parameteriza­tions and their corresponding values in an aggregate fitness space. Since the problem is treated as a multi-objective optimization task, different measures of the amplifier like the transconductance, the slew rate, the linear range and the input capacitance are used as fitness functions. Finally, simulation results are pre­sented, using a standard 0,5μm CMOS technology.

  5. 0.18μm CMOS Low Voltage Power Amplifier For WSN Application

    Directory of Open Access Journals (Sweden)

    Wu Chenjian

    2013-08-01

    Full Text Available This paper presents the design of a Class A/B power amplifier (PA for 2.4-2.4835GHz Wireless Sensor Network (WSN system in 0.18μm CMOS technology. The PA adopts the single-stage differential structure and the output power of the PA can be controlled by switching the sizes of transistors. Seven different level of output power can be obtained through a three- bit control code. The tested results shows that the proposed PA achieves power added efficiency (PAE of 26.73% while delivering an output power of 6.35dBm at 1dB compression point. Its power gain is 15.87dB. With a low DC voltage supply of 1V, its power consumption is 15.3mW. The PA die size is 1070×610μm2.

  6. A HIGH PERFORMANCE FULLY DIFFERENTIAL PURE CURRENT MODE OPERATIONAL AMPLIFIER AND ITS APPLICATIONS

    Directory of Open Access Journals (Sweden)

    SEYED JAVAD AZHARI

    2012-08-01

    Full Text Available In this paper a novel high performance all current-mode fully-differential (FD Current mode Operational Amplifier (COA in BIPOLAR technology is presented. The unique true current mode simple structure grants the proposed COA the largest yet reported unity gain frequency while providing low voltage low power operation. Benefiting from some novel ideas, it also exhibits high gain, high common mode rejection ratio (CMRR, high power supply rejection ratio (PSRR, high output impedance, low input impedance and most importantly high current drive capability. Its most important parameters are derived and its performance is proved by PSPICE simulations using 0.8 μm BICMOS process parameters at supply voltage of ±1.2V indicating the values of 82.4 dB,52.3º, 31.5 Ω, 31.78 MΩ, 179.2 dB, 2 mW and 698 MHz for gain, phase margin, input impedance, output impedance, CMRR, power and unity gain frequency respectively. Its CMRR also shows very high frequency of 2.64 GHz at zero dB. Its very high PSRR+/PSRR- of 182 dB/196 dB makes the proposed COA a highly suitable block in Mixed-Mode (SOC chips. Most favourably it can deliver up to ±1.5 mA yielding a high current drive capability exceeding 25. To demonstrate the performance of the proposed COA, it is used to realize a constant bandwidth voltage amplifier and a high performance Rm amplifier.

  7. Digital standard cells and operational amplifiers for operation up to 250 degrees C using low-cost CMOS technology

    Science.gov (United States)

    Stemmer, Jens; Ackermann, Joerg; Uffmann, Dirk; Aderhold, Jochen

    1996-09-01

    There is an increasing demand from automotive, aircraft and space industry for reliable high temperature resistant electronics. Circuits with reliable functionality up to temperatures of 250 degree(s)C would be sufficient for most of these applications. Digital standard cells and operational amplifiers are the basic building blocks of these circuits. Commercially available digital standard cell libraries and operational amplifiers are normally specified for operation up to a maximum temperature of 125 degree(s)C. Hence, the purpose of this work was the design and characterization of digital standard cells and operational amplifiers for operation up to 250 degree(s)C using a low-cost 1.0 micrometers epi-CMOS process. Several design measures were applied to the cells in order to further improve latch-up resistivity and to limit leakage currents, respectively. The transfer curves of all digital cells for all input signal combinations have been recorded in the temperature range from 30 to 250 degree(s)C. Significant results are very low temperature shifts of the noise margins and of the switching point, respectively. Furthermore, the low (0 V) and high (5 V) levels are reached exactly over the entire temperature range. Outstanding characteristics of the operational amplifier comprise low open-loop gain temperature drift as well as low offset and offset temperature drift, respectively. The open-loop gain was greater than 83 dB at room temperature with a drift of less than 0.02 dB/ degree(s)C. The offset voltage amounted to -1 mV at room temperature and 1 mV at 250 degree(s)C, respectively. The long-term behavior of these cells is currently under investigation.

  8. Characterization of a complementary metal-oxide semiconductor operational amplifier from 300 to 4.2 K

    Science.gov (United States)

    Hastings, J. Todd; Ng, K.-W.

    1995-06-01

    We report the first operation of a commercially available complementary metal-oxide semiconductor operational amplifier, at liquid helium temperature. In addition, we have characterized several factors important to the practical application of such a circuit from room temperature down to 4.2 K. The temperature dependence and measurement techniques for open-loop gain, input offset voltage, input referred noise voltage, and quiescent current are presented. We will discuss our observations of low temperature behavior of the opamp with respect to others' previous results. This work represents an advancement over earlier studies which only reported opamp operation down to 77 or 30 K with measurements taken only at a limited number of temperatures instead of a broad range. Our data suggest that under special operating conditions the opamps can be effectively used with careful consideration of noise and gain performance. Input offset voltage levels and quiescent current (including power consumption) resemble normal room temperature operation.

  9. Design Considerations for CMOS Current Mode Operational Amplifiers and Current Conveyors

    DEFF Research Database (Denmark)

    Bruun, Erik

    This dissertation is about CMOS current conveyors and current mode operational amplifiers (opamps). They are generic devices for continuous time signal processing in circuits and systems where signals are represented by currents.Substantial advancements are reported in the dissertation, both...... implementations of current mode opamps in CMOS technology are described. Also, current conveyor configurations with multiple outputs and flexible feedback connections from outputs to inputs are introduced. The dissertation includes several examples of circuit configurations ranging from simple class A and class...... AB conveyor implementations to implementations based on purely digital circuit structures and on more complex analog subsystems such as a voltage mode opamp with feedback to provide a voltage follower action. An important by-product of the investigation of current mode structures is the definition...

  10. Design of Biquad Universal Filter Using Operational Transconductance Amplifier in 180nm Technology

    Directory of Open Access Journals (Sweden)

    Rahul Kumar,

    2014-05-01

    Full Text Available This paper presents concept of universal filter using operational transconductance amplifier (OTA.The 0.18μm CMOS process is used for design and simulation. This OTA has basing current of 50μA with supply voltage ±1.25v. The design and simulation of this OTA is done using CADENCE virtuoso environment with UMC 0.18μm technology file. This paper presents a electronically tunable voltage mode universal biquadratic filter with Three input and single output using two single ended OTA and two capacitors. The proposed filter provides low-pass,High-pass,Band-pass and Band-stop by appropriately connecting the input terminals. The natural frequency and the quality factor can be set orthogonally by adjusting the circuit components.Also the natural frequency can be electronically tuned via the bias currents of OTAs.

  11. Annealing behavior of radiation damage in JFET-input operational amplifiers

    Institute of Scientific and Technical Information of China (English)

    Zheng Yuzhan; Lu Wu; Ren Diyuan; Wang Yiyuan; Guo Qi; Yu Xuefeng

    2009-01-01

    The elevated and room temperature annealing behavior of radiation damage in JFET-input operational amplifiers (op-amps) were investigated. High-and low-dose-rate irradiation results show that one of the JFET-input op-amps studied in this paper exhibits enhanced low-dose-rate sensitivity and the other shows time-dependent effect. The offset voltage of both op-amps increases during long-term annealing at room temperature. However, the offset voltage decreases at elevated temperature. The dramatic difference in annealing behavior at room and elevated temperatures indicates the migration behavior of radiation-induced species at elevated and room temperatures. This provides useful information to understand the degradation and annealing mechanisms in JFET-input op-amps under total ionizing radiation. Moreover, the annealing of oxide trapped charges should be taken into consideration, when using elevated temperature methods to evaluate low-dose-rate damage.

  12. Wide Operating Voltage Range Fuel Cell Battery Charger

    DEFF Research Database (Denmark)

    Hernandez Botella, Juan Carlos; Mira Albert, Maria del Carmen; Sen, Gokhan;

    2014-01-01

    DC-DC converters for fuel cell applications require wide voltage range operation due to the unique fuel cell characteristic curve. Primary parallel isolated boost converter (PPIBC) is a boost derived topology for low voltage high current applications reaching an efficiency figure up to 98.2 %. Th...

  13. Wide Operating Voltage Range Fuel Cell Battery Charger

    DEFF Research Database (Denmark)

    Hernandez Botella, Juan Carlos; Mira Albert, Maria del Carmen; Sen, Gokhan

    2014-01-01

    DC-DC converters for fuel cell applications require wide voltage range operation due to the unique fuel cell characteristic curve. Primary parallel isolated boost converter (PPIBC) is a boost derived topology for low voltage high current applications reaching an efficiency figure up to 98.2 %. Th...

  14. Towards a generic operational amplifier with dynamic reconfiguration capability

    Directory of Open Access Journals (Sweden)

    S. K. Lakshmanan

    2006-01-01

    Full Text Available Analog and analog-digital mixed signal electronics needed for sensor systems are indispensable components which tend to drifts from the normal phase of operation due to the impact of manufacturing conditions and environmental influences like etching, aging etc. Precise design methodology, trimming / calibration are essential to restore functionality of the system. Recent block level granular approaches using Field Programmable Analog Array and the more recent approaches from evolutionary electronics providing transistor level granularity using Field Programmable Transistor Arrays offers considerable extensions. In our work, we started on a new medium granular level approach called Field Programmable medium-granular Mixed-signal Array (FPMA providing basic building blocks of heterogeneous array of active and passive devices to configure established circuit structures which are adaptive, biologically inspired and dynamically re-configurable. Our design objective is to create components of clear compatibility to that of the industrial standards having predictable behavior along with the incorporation of existing design knowledge. The cells can be used in as a single instance or multiple instances. Further, we will focus on a generic dynamic reconfigurable amplifier cell with flexible topology and dimension called Generic Operational Amplifier (GOPA. The incentive of our work comes from recent development in the field of measurement and instrumentation. The digital programming of analog devices is carried out using range of algorithms from simple to evolutionary. Physical realization of the basic cells is carried out in 0.35 μm CMOS technology.

  15. The design of a 4’th order Bandpass Butterworth filter with one operational amplifier

    DEFF Research Database (Denmark)

    Gaunholt, Hans

    2008-01-01

    band pass filter with Butterworth poles applying just one operational amplifier coupled as a unity gain amplifier. The unity gain amplifiers have the advantage of providing low power consumption, yielding a large dynamic range, sometimes simplifying the amplifier design and being usable over a larger......A numerical design method is presented for the design of all pole band pass active-RC filters applying just one operational amplifier. The operational amplifier model used is the integrator model: ωt/s where ωt is the unity gain fre-quency. The design method is used for the design of a fourth order...

  16. Multisensor readout circuit using a multiple differential-input operation amplifier with pulse output

    Science.gov (United States)

    Wang, Ruey-Lue; Fu, Chien-Cheng; Yu, Chi; Wu, Wei-De; Chuang, Yan-Tse; Lin, Chen-Fu; Liao, Hsin-Hao; Tsai, Hann-Huei; Juang, Ying-Zong

    2014-01-01

    In this paper, a CMOS multisensor readout circuit is presented. A multiple differential-input operational amplifier (MDI-OPA) with three distinct positive inputs and one common negative input is designed to make one of the three inputs to act as a general differential-input OPA through a built-in multiplexer. A voltage-to-current converter and a current-controlled oscillator are integrated with the MDI-OPA so that the selected analog input voltage can be used to generate a pulse output whose frequency is linearly proportional to the selected input voltage. The linearity of the transfer characteristic is at least 99.99% for input voltages below 1.44 V. An added current-offset structure is used to modify the transfer characteristic that usually varies owing to process variation. The measured output transfer characteristics of three input channels show nearly the same sensitivity of 90 Hz/mV or so with a linearity of at least 99.99% with the assistance of the current-offset mechanism.

  17. Experimental Operation of SSC RF Cavities at Higher Voltage

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    For many years,SSC RF cavities were operated at about half of its designing voltages,which are from 100 kV at 6.5 MHz to 250 kV at 14.5 MHz respectively.But,with the construction of new project HIRFL-CSR,high intensity beams are required to be extracted from SSC.Therefore,in order to achieve this aim,SSC Dee voltages must be enhanced to higher operation level.

  18. A New Combined Boost Converter with Improved Voltage Gain as a Battery-Powered Front-End Interface for Automotive Audio Amplifiers

    Directory of Open Access Journals (Sweden)

    Ching-Ming Lai

    2017-08-01

    Full Text Available High boost DC/DC voltage conversion is always indispensable in a power electronic interface of certain battery-powered electrical equipment. However, a conventional boost converter works for a wide duty cycle for such high voltage gain, which increases power consumption and has low reliability problems. In order to solve this issue, a new battery-powered combined boost converter with an interleaved structure consisting of two phases used in automotive audio amplifier is presented. The first phase uses a conventional boost converter; the second phase employs the inverted type. With this architecture, a higher boost voltage gain is able to be achieved. A derivation of the operating principles of the converter, analyses of its topology, as well as a closed-loop control designs are performed in this study. Furthermore, simulations and experiments are also performed using input voltage of 12 V for a 120 W circuit. A reasonable duty cycle is selected to reach output voltage of 60 V, which corresponds to static voltage gain of five. The converter achieves a maximum measured conversion efficiency of 98.7% and the full load efficiency of 89.1%.

  19. Operational Transresistance Amplifier-Based Multiphase Sinusoidal Oscillators

    Directory of Open Access Journals (Sweden)

    Rajeshwari Pandey

    2011-01-01

    Full Text Available Multiphase sinusoidal oscillator circuits are presented which utilize Operational Transresistance Amplifier (OTRA as the active element. The first circuit produces n odd-phase oscillations of equal amplitudes and equally spaced in phase. The second circuit is capable of producing n odd- or even- phase oscillations equally spaced in phase. An alternative approach is discussed in the third circuit, which utilizes a single-phase tunable oscillator circuit which is used to inject signals into a phase shifter circuits. An automatic gain control (AGC circuit has been implemented for the second and third circuit. The circuits are simple to realize and have a low component count. PSPICE simulations have been given to verify the theoretical analysis. The experimental outcome corroborates the theoretical propositions and simulated results.

  20. Noise and frequency response of silicon photodiode operational amplifier combination.

    Science.gov (United States)

    Hamstra, R H; Wendland, P

    1972-07-01

    The noise in dark and illuminated Schottky barrier and diffused PIN non-guard-ring photodiodes has been measured between 0.1 Hz and 10 kHz and compared to theory with an excellent fit. It is shown that diodes used photovoltaically are free of 1/f noise in the dark. It is also demonstrated that there is an optimum bias (ca. 100 mV) for minimum noise equivalent power. When only a resistive load is used with a detector, it often determines the frequency response and noise of the detector circuit. We develop and demonstrate equations for the major improvements in both noise and frequency response that can be obtained using a current mode (inverting) operational amplifier.

  1. Investigating student understanding of operational-amplifier circuits

    Science.gov (United States)

    Papanikolaou, Christos P.; Tombras, George S.; Van De Bogart, Kevin L.; Stetzer, MacKenzie R.

    2015-12-01

    The research reported in this article represents a systematic, multi-year investigation of student understanding of the behavior of basic operational-amplifier (op-amp) circuits. The participants in this study were undergraduates enrolled in upper-division physics courses on analog electronics at three different institutions, as well as undergraduates in introductory and upper-division electrical engineering courses at one of the institutions. The findings indicate that many students complete these courses without developing a functional understanding of the behavior of op-amp circuits. This article describes the most prevalent conceptual and reasoning difficulties identified (typically after lecture and hands-on laboratory experience) as well as several implications for electronics instruction that have emerged from this investigation.

  2. Bandwidth limitations in current mode and voltage mode integrated feedback amplifiers

    DEFF Research Database (Denmark)

    Bruun, Erik

    1995-01-01

    loop bandwidth remains constant for a feedback amplifier. The constant-bandwidth relations of such amplifier designs are reviewed in this paper and they are combined with the constraints imposed by technology when the feedback amplifier is to be designed in an integrated technology. From this analysis...

  3. Voltage Collapse Risk Associated to Under-Voltage Capacitive Compensation in Electric Power System Operation

    Directory of Open Access Journals (Sweden)

    Heraldo S. Barbuy

    2009-01-01

    Full Text Available Problem statement: In the operation of an Electric Power System (EPS, it has been usual to provide reactive power injection to avoid an under-voltage bus condition. In some situations an adequate voltage profile will not be a guarantee against Voltage Collapses (VCs that may cause blackouts as seen in many occurrences around the world. The repeatedly injection of reactive power can turn a bus into a characteristic too much capacitive. Under this condition and in the presence of a considerable percentage of the constant power load type, there will be a high risk of a VC. Any of the indices proposed in the literature as VC Proximity Indicators (VCPIs may alert the operator about the risk. Approach: In order to elucidate the problem stated, simulations were performed using MatLab/SimPowerSystems. It was used a basic example system composed by an infinite-bus feeding, through a large impedance line, a bus load whose power could be increased in ramp manner. It is also included a shunt capacitive compensation at the load bus every time the voltage value reaches 0.9 pu. Therefore, the VC risk increase could be shown by means of graphic results and the indications of some VCPIs sensitivity indices (including the new proposed index. Results: The graphics obtained in this study is a contribution to illustrate the voltage collapse risk problem when dealing with adjustments of voltage profile to meet the system requirements. Also, a VCPI sensitivity indicator using apparent load power was tested. The results have shown that all VCPI responses are very similar for a given case and electric system. Conclusion/Recommendations: Any VCPI information can help in the decision stage between either more reactive power injection or load shedding. A routine can also be developed for a supervisory program in order to alert the operator about VC risks.

  4. Charge-sensitive front-end electronics with operational amplifiers for CdZnTe detectors

    Science.gov (United States)

    Födisch, P.; Berthel, M.; Lange, B.; Kirschke, T.; Enghardt, W.; Kaever, P.

    2016-09-01

    Cadmium zinc telluride (CdZnTe, CZT) radiation detectors are suitable for a variety of applications, due to their high spatial resolution and spectroscopic energy performance at room temperature. However, state-of-the-art detector systems require high-performance readout electronics. Though an application-specific integrated circuit (ASIC) is an adequate solution for the readout, requirements of high dynamic range and high throughput are not available in any commercial circuit. Consequently, the present study develops the analog front-end electronics with operational amplifiers for an 8×8 pixelated CZT detector. For this purpose, we modeled an electrical equivalent circuit of the CZT detector with the associated charge-sensitive amplifier (CSA). Based on a detailed network analysis, the circuit design is completed by numerical values for various features such as ballistic deficit, charge-to-voltage gain, rise time, and noise level. A verification of the performance is carried out by synthetic detector signals and a pixel detector. The experimental results with the pixel detector assembly and a 22Na radioactive source emphasize the depth dependence of the measured energy. After pulse processing with depth correction based on the fit of the weighting potential, the energy resolution is 2.2% (FWHM) for the 511 keV photopeak.

  5. Input-output Transfer Function Analysis of a Photometer Circuit Based on an Operational Amplifier.

    Science.gov (United States)

    Hernandez, Wilmar

    2008-01-09

    In this paper an input-output transfer function analysis based on the frequencyresponse of a photometer circuit based on operational amplifier (op amp) is carried out. Opamps are universally used in monitoring photodetectors and there are a variety of amplifierconnections for this purpose. However, the electronic circuits that are usually used to carryout the signal treatment in photometer circuits introduce some limitations in theperformance of the photometers that influence the selection of the op amps and otherelectronic devices. For example, the bandwidth, slew-rate, noise, input impedance and gain,among other characteristics of the op amp, are often the performance limiting factors ofphotometer circuits. For this reason, in this paper a comparative analysis between twophotodiode amplifier circuits is carried out. One circuit is based on a conventional currentto-voltage converter connection and the other circuit is based on a robust current-to-voltageconverter connection. The results are satisfactory and show that the photodiode amplifierperformance can be improved by using robust control techniques.

  6. Performance Analysis of Low Power, High Gain Operational Amplifier Using CMOS VLSI Design

    Directory of Open Access Journals (Sweden)

    Ankush S. Patharkar

    2014-07-01

    Full Text Available The operational amplifier is one of the most useful and important component of analog electronics. They are widely used in popular electronics. Their primary limitation is that they are not especially fast. The typical performance degrades rapidly for frequencies greater than about 1 MHz, although some models are designed specifically to handle higher frequencies. The primary use of op-amps in amplifier and related circuits is closely connected to the concept of negative feedback. The operational amplifier has high gain, high input impedance and low output impedance. Here the operational amplifier designed by using CMOS VLSI technology having low power consumption and high gain.

  7. Primary Paralleled Isolated Boost Converter with Extended Operating Voltage Range

    DEFF Research Database (Denmark)

    Hernandez Botella, Juan Carlos; Sen, Gökhan; Mira Albert, Maria del Carmen

    2012-01-01

    Applications requiring wide input and output voltage range cannot often be satisfied by using buck or boost derived topologies. Primary paralleled isolated boost converter (PPIBC) [1]-[2] is a high efficiency boost derived topology. This paper proposes a new operation mode for extending the input...

  8. Design of Enhanced Performance Folded Cascoded Operational Transconductance Amplifier

    Science.gov (United States)

    Soni, Priyanka; Singh, B. P.; Bhardwaj, Monika

    2010-11-01

    This paper presents a modified folded cascode transconductance amplifier. Inclusion of an extra stage and compensation network in the proposed amplifier enhanced the performance over the conventional folded. The proposed circuit offers good trade-off on the conflicting performance parameters such as bandwidth, slew rate, d.c. gain, phase margin and settling time. The simulation has been carried out on Tanner EDA tool on TSMC 180 nm technology.

  9. Evaluation of Silicon-on-Insulator HTOP-01 Operational Amplifier for Wide Temperature Operation

    Science.gov (United States)

    Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

    2008-01-01

    Electronics capable of operation under extreme temperatures are required in many of NASA space exploration missions. Aerospace and military applications, as well as some terrestrial industries constitute environments where electronic systems are anticipated to be exposed to extreme temperatures and wide-range thermal swings. Electronics that are able to withstand and operate efficiently in such harsh environments would simplify, if not eliminate, traditional thermal control elements and their associated structures for proper ambient operation. As a result, overall system mass would be reduced, design would be simplified, and reliability would be improved. Electronic parts that are built utilizing silicon-on-insulator (SOI) technology are known to offer better radiation-tolerance compared to their conventional silicon counterparts, provide faster switching, and consume less power. They also exhibit reduced leakage current and, thus, they are often tailored for high temperature operation. These attributes make SOI-based devices suitable for use in harsh environments where extreme temperatures and wide thermal swings are anticipated. A new operational amplifier, based on silicon-on-insulator technology and geared for high temperature well-logging applications, was recently introduced by Honeywell Corporation. This HTOP-01 dual precision operational amplifier is a low power device, operates on a single supply, and has an internal oscillator and an external clocking option [1]. It is rated for operation from -55 C to +225 C with a maximum output current capability of 50 mA. The amplifier chip is designed as a 14-pin, hermetically-sealed device in a ceramic package. Table I shows some of the device manufacturer s specifications.

  10. Prediction of Pollution Flashover Voltage Based on Leakage Current Under AC Operating Voltage

    Institute of Scientific and Technical Information of China (English)

    MEI Hongwei; WANG Liming; GUAN Zhicheng; MAO Yingke

    2012-01-01

    This paper presented a model to predict the AC flashover voltage of contaminated suspension insulators.The prediction method is based on the maximum leakage current under AC operating voltage.Three kinds of widely used suspension insulators were tested in various contamination states such as pollution layers with different equivalent salt deposit density(ESDD),different composition of the conductive components,different non-soluble deposit density(NSDD) and different pollution distribution states to simulate the contamination states in nature.The effective ESDD was proposed and calculated.Influences of contamination states to maximum leakage current and flashover voltage were studied.Then,the relationships between flashover voltage and leakage current in these states were presented.Finally,considering the difference of insulator profiles,a new parameter is defined and a model to estimate the flashover voltage based on this parameter is developed.The model could be used in all kinds of suspension insulators in different contamination states and was validated by the test results.

  11. A study on threshold voltage stability of low operating voltage organic thin-film transistors

    Science.gov (United States)

    Padma, N.; Sen, Shaswati; Sawant, Shilpa N.; Tokas, R.

    2013-08-01

    A low operating voltage (<2 V) organic field-effect transistor (OFET) using phenylhexyltrichlorosilane (PTS) self-assembled monolayer (SAM) dielectric and copper phthalocyanine (CuPc) as semiconductor with improved mobility (0.035 cm2 V-1 s-1) and threshold voltage stability was demonstrated. This device showed better performance when compared to an OFET with octyltrichlorosilane (OTS-8) SAM dielectric. The improved mobility was attributed to the 2D growth mode of CuPc on PTS SAM because of surface energy matching between the two, whereas CuPc film on OTS-8 showed a 3D growth mode with larger grain boundary density. The higher threshold voltage stability of OFETs on PTS SAM was attributed to the efficient coverage and screening of trap centres at dielectric/semiconductor interface due to stronger intermolecular linking and formation of closely packed surface by the bulky phenyl end groups. Decrease in grain boundaries offered by 2D growth of CuPc for electron and hole trapping was also found to be another reason for improved threshold voltage stability. The results indicated that the nature of the end group of SAM dielectric, surface chemistry of dielectric and initial growth mode of semiconductors are all responsible for improvement in threshold voltage stability and enhanced performance of OFET.

  12. A High-Voltage Class D Audio Amplifier for Dielectric Elastomer Transducers

    DEFF Research Database (Denmark)

    Nielsen, Dennis; Knott, Arnold; Andersen, Michael A. E.

    2014-01-01

    Dielectric Elastomer (DE) transducers have emerged as a very interesting alternative to the traditional electrodynamic transducer. Lightweight, small size and high maneuverability are some of the key features of the DE transducer. An amplifier for the DE transducer suitable for audio applications...... is proposed and analyzed. The amplifier addresses the issue of a high impedance load, ensuring a linear response over the midrange region of the audio bandwidth (100 Hz – 3.5 kHz). THD+N below 0.1% are reported for the ± 300 V prototype amplifier producing a maximum of 125 Var at a peak efficiency of 95 %....

  13. The energy transfer between the ports of an implemented gyrator using LM13700 operational transconductance amplifier

    Science.gov (United States)

    Tatai, Ildiko; Zaharie, Ioan

    2012-11-01

    In this paper a gyrator implementation using a LM13700 operational transconductance amplifier is analyzed. It was first verified under PSpice simulation and experimentally the antireciprocity of this gyrator, i.e., its properties. This type of gyrator can be used for controlling the energy transfer from one port to the other by modifying the bias currents of the operational transconductance amplifier.

  14. The energy transfer between the ports of an implemented gyrator using LM13700 operational transconductance amplifier.

    Science.gov (United States)

    Tatai, Ildiko; Zaharie, Ioan

    2012-11-01

    In this paper a gyrator implementation using a LM13700 operational transconductance amplifier is analyzed. It was first verified under PSpice simulation and experimentally the antireciprocity of this gyrator, i.e., its properties. This type of gyrator can be used for controlling the energy transfer from one port to the other by modifying the bias currents of the operational transconductance amplifier.

  15. Low Power CMOS Operational Amplifier with Integrated Common-Mode Feedback for Data Converter

    Directory of Open Access Journals (Sweden)

    Murad S.A.Z

    2017-01-01

    Full Text Available The development a high-performance design of analog circuits becomes increasingly challenging with the continuous trend towards reducing the voltage supply and low power consumption without neglecting the trade-off among other performance parameters. This paper presents the design and implementation of CMOS operational amplifier (op-amp with integrated common-mode feedback (CMFB circuit for data converter using 0.13-μm Silterra CMOS technology. The folded cascode topology is employed as a main op-amp design because it provides high gain and high bandwidth besides low power consumption. The simulation results indicate that the DC gain of 64.5 dB along 133.1 MHz unity gain bandwidth (UGB is achieved for a 1 pF load capacitor. The slew rate of 22.6 V/μs, the phase margin (PM of 68.4° with settling time of 72.4 ns are obtained. The power consumption of this op-amp is 0.3 mW through voltage supply of 1.8 V.

  16. Improvement and test of high power amplifier high voltage interlock circuit%高功放高压联锁电路改进与测试

    Institute of Scientific and Technical Information of China (English)

    金华松; 邱冬冬; 刘斯亮

    2012-01-01

    Whether the device can work regularly was determined by the performance of high voltage interlock directly. Through the operating principle analysis of high voltage interlock circuit and AC time delayer of high power amplifier based on CPI mechanical cabinet, an improved high voltage interlock circuit solution and a test method applied in AC time delayer are studied. The improved interlock circuit overcomes the drawbacks of original high voltage interlock solution. The designed test circuit can carry out quantitative test of AC time delayer parameters.%高压联锁性能的好坏直接影响设备能否正常工作.通过分析CPI高功放(HPA)的延时加高压程序、高压联锁电路和交流延时器工作原理,研究出一种新改选的高压联锁电路方案和用于交流延时器的测试方法.分析阐述表明,该方案和测试方法克服了CPI高功放的高压联锁方案的弊端.另外,根据分析结果设计了延时测试电路,它可对交流延时器性能参数进行定量测试.

  17. Study and stability improving of operational amplifiers in the capacitance sensor drivers

    Directory of Open Access Journals (Sweden)

    Hotra Z. Yu.

    2008-06-01

    Full Text Available Driver for capacitance loads more than 10 nF is developed and investigated. Driver provides high operational stability of the transducer by decoupling operational amplifier output from reactive load.

  18. Operation regimes, gain dynamics and highly stable operation points of Ho:YLF regenerative amplifiers

    CERN Document Server

    Kroetz, Peter; Calendron, Anne-Laure; Chatterjee, Gourab; Cankaya, Huseyin; Murari, Krishna; Kaertner, Franz X; Hartl, Ingmar; Miller, R J Dwayne

    2016-01-01

    We present a comprehensive study of laser pulse amplification with respect to operation regimes, gain dynamics, and highly stable operation points of Ho:YLF regenerative amplifiers (RAs). The findings are expected to be more generic than for this specific case. Operation regimes are distinguished with respect to pulse energy and the appearance of pulse instability as a function of the repetition rate, seed energy, and pump intensity. The corresponding gain dynamics are presented, identifying highly stable operation points related to high gain build -up during pumping and high gain depletion during pulse amplification. These operation points are studied numerically and experimentally as a function of several parameters, thereby achieving, for our Ho:YLF RA, highly stable output pulses with measured fluctuations of only 0.19% (standard deviation).

  19. A High-Voltage class-D power amplifier with switching frequency regulation for improved high-efficiency output power range

    NARCIS (Netherlands)

    Ma, Haifeng; Zee, van der Ronan; Nauta, Bram

    2015-01-01

    This paper describes the power dissipation analysis and the design of an efficiency-improved high-voltage class-D power amplifier. The amplifier adaptively regulates its switching frequency for optimal power efficiency across the full output power range. This is based on detecting the switching outp

  20. Cryocooler operation of SNIS Josephson arrays for AC Voltage standards

    Science.gov (United States)

    Sosso, A.; De Leo, N.; Fretto, M.; Monticone, E.; Roncaglione, L.; Rocci, R.; Lacquaniti, V.

    2014-05-01

    Avoiding liquid helium is now a worldwide issue, thus cryocooler operation is becoming mandatory for a wider use of superconductive electronics. Josephson voltage standards hold a peculiar position among superconducting devices, as they are in use in high precision voltage metrology since decades. Higher temperature operation would reduce the refrigerator size and complexity, however, arrays of Josephson junctions made with high temperature superconductors for voltage standard applications are not to date available. The SNIS (Superconductor-Normal metal-Insulator-Superconductor) junction technology developed at INRIM, based on low temperature superconductors, but capable of operation well above liquid helium temperature, is interesting for application to a compact cryocooled standard, allowing to set a compromise between device and refrigerator requirements. In this work, the behavior of SNIS devices cooled with a closed-cycle refrigerator has been investigated, both in DC and under RF irradiation. Issues related to thermal design of the apparatus to solve specific problems not faced with liquid coolants, like reduced cooling power and minimization of thermal gradients for uniform operation of the chip are discussed in detail.

  1. To Implement Energy Efficient of Integer Unit by Higher Voltage Flip Flop Based on Minimum operating Dual Supply Voltage Techinque

    Directory of Open Access Journals (Sweden)

    M. Subhashini,

    2014-06-01

    Full Text Available To achieve the most energy-efficient operation, this brief presents a circuit design technique for separating the power supply voltage (VDD of flip-flops (FFs from that of combinational circuits, called the higher voltage FF (HVFF. Although VDD scaling can reduce the energy, the minimum operating voltage (VDDmin of FFs prevents the operation at the optimum supply voltage that minimizes the energy, because the VDDmin of FFs is higher than the optimum supply voltage. In HVFF, the VDD of combinational logic gates is reduced below the VDDmin of FFs while keeping the VDD of FFs at their VDDmin. This makes it possible to minimize the energy without power and delay penalties at the nominal supply voltage (1.2 V as well as without FF topological difications. A four bit alu is designed in these paper by using dual supply voltage usig DSCH.

  2. Differential Amplifier with Current-Mirror Load: Influence of Current Gain, Early Voltage, and Supply Voltage on the DC Output Voltage

    Science.gov (United States)

    Paulik, G. F.; Mayer, R. P.

    2012-01-01

    A differential amplifier composed of an emitter-coupled pair is useful as an example in lecture presentations and laboratory experiments in electronic circuit analysis courses. However, in an active circuit with zero input load V[subscript id], both laboratory measurements and PSPICE and LTspice simulation results for the output voltage…

  3. Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching.

    Science.gov (United States)

    Choi, Jaeho; Park, Sunghak; Lee, Joohee; Hong, Kootak; Kim, Do-Hong; Moon, Cheon Woo; Park, Gyeong Do; Suh, Junmin; Hwang, Jinyeon; Kim, Soo Young; Jung, Hyun Suk; Park, Nam-Gyu; Han, Seungwu; Nam, Ki Tae; Jang, Ho Won

    2016-08-01

    Organolead halide perovskites are used for low-operating-voltage multilevel resistive switching. Ag/CH3 NH3 PbI3 /Pt cells exhibit electroforming-free resistive switching at an electric field of 3.25 × 10(3) V cm(-1) for four distinguishable ON-state resistance levels. The migration of iodine interstitials and vacancies with low activation energies is responsible for the low-electric-field resistive switching via filament formation and annihilation.

  4. Low-power, enhanced-gain adaptive-biasing-based Operational Transconductance Amplifiers

    DEFF Research Database (Denmark)

    Moradi, Farshad

    A symmetrical PMOS OTA (Operational Transconductance Amplifier) is used to build an advanced rail-to-rail amplifier with improved DC-gain and reduced power consumption. By using the adaptive biasing circuit for two differential inputs, a low stand-by current can be achieved, reducing power...

  5. 1.8V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET

    Science.gov (United States)

    Harima, Fumio; Bito, Yasunori; Takahashi, Hidemasa; Iwata, Naotaka

    We have developed a power amplifier IC for Bluetooth Class 1 operating at single low voltage of 1.8V for both control and drain voltages. We can realize it due to fully enhancement-mode hetero-junction FETs utilizing a re-grown p+-GaAs gate technology. The power amplifier is a highly compact design as a small package of 1.5mm×1.5mm×0.4mm with fully integrated gain control and shutdown functions. An impressive power added efficiency of 52% at an output power of 20dBm is achieved with an associated gain of 22dB. Also, sufficiently low leakage current of 0.25μA at 27°C is exhibited, which is comparable to conventional HBT power amplifiers.

  6. Automatic voltage imbalance detector

    Science.gov (United States)

    Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

    1984-01-01

    A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  7. OperationalAmplifier Analysis when Migrating from 0.18 µm to 65 µm CMOS Technology

    Directory of Open Access Journals (Sweden)

    Karolis Kiela

    2013-05-01

    Full Text Available The article offers the analysis of operational amplifier parameter changes, when circuits are scaled from 0.18 μm to 65 nm CMOS technology. Two two-stage operational amplifiers were designed for this purpose: first uses n-MOS input differential pair; second uses cascaded active loads structure and p-MOS type input differential pair. The operational amplifiers were designed in 0.18 μm CMOS technology and scaled to 65 nm CMOS. Other scaling methods were also analysed when redesigning circuits from one IC technology to another. Results of the original and scaled operational amplifier parameters are presented and analysed.Article in Lithuanian

  8. Impact of Solar Array Designs on High Voltage Operations

    Science.gov (United States)

    Brandhorst, Henry W., Jr.; Ferguson, Dale; Piszczor, Mike; ONeill, Mark

    2006-01-01

    As power levels of advanced spacecraft climb above 25 kW, higher solar array operating voltages become attractive. Even in today s satellites, operating spacecraft buses at 100 V and above has led to arcing in GEO communications satellites, so the issue of spacecraft charging and solar array arcing remains a design problem. In addition, micrometeoroid impacts on all of these arrays can also lead to arcing if the spacecraft is at an elevated potential. For example, tests on space station hardware disclosed arcing at 75V on anodized A1 structures that were struck with hypervelocity particles in Low Earth Orbit (LEO) plasmas. Thus an understanding of these effects is necessary to design reliable high voltage solar arrays of the future, especially in light of the Vision for Space Exploration of NASA. In the future, large GEO communication satellites, lunar bases, solar electric propulsion missions, high power communication systems around Mars can lead to power levels well above 100 kW. As noted above, it will be essential to increase operating voltages of the solar arrays well above 80 V to keep the mass of cabling needed to carry the high currents to an acceptable level. Thus, the purpose of this paper is to discuss various solar array approaches, to discuss the results of testing them at high voltages, in the presence of simulated space plasma and under hypervelocity impact. Three different types of arrays will be considered. One will be a planar array using thin film cells, the second will use planar single or multijunction cells and the last will use the Stretched Lens Array (SLA - 8-fold concentration). Each of these has different approaches for protection from the space environment. The thin film cell based arrays have minimal covering due to their inherent radiation tolerance, conventional GaAs and multijunction cells have the traditional cerium-doped microsheet glasses (of appropriate thickness) that are usually attached with Dow Corning DC 93-500 silicone

  9. High Voltage Operation of heavily irradiated silicon microstrip detectors

    CERN Document Server

    Gu, W H; Angarano, M M; Bader, A; Biggeri, U; Boemi, D; Braibant, S; Breuker, H; Bruzzi, Mara; Caner, A; Catacchini, E; Civinini, C; Creanza, D; D'Alessandro, R; Demaria, N; Eklund, C; Peisert, Anna; Feld, L; Fiore, L; Focardi, E; Fürtjes, A; Glessing, B; Hall, G; Hammerstrom, R; Dollan, Ralph; Huhtinen, M; Karimäki, V; König, S; Lenzi, M; Lübelsmeyer, K; Maggi, G; Mannelli, M; Marchioro, A; Mariotti, C; Mättig, P; McEvoy, B; Meschini, M; My, S; Pandoulas, D; Parrini, G; Pieri, M; Dollan, Ralph; Potenza, R; Raso, G; Raymond, M; Schmitt, B; Selvaggi, G; Siedling, R; Silvestris, L; Skog, K; Stefanini, G; Tempesta, P; Tricomi, A; Watts, S; Wittmer, B; De Palma, M

    1999-01-01

    We discuss the results obtained from the R&D studies, done within the CMS experiment at LHC related to the behaviour of silicon microstrip prototype detectors when they are operated at high bias voltages before and after heavy irradiation, simulating up to 10 years of LHC running conditions. We have found detectors from several manufacturesrs that are able to work at V_bias > 500 Volts before and after the irradiation procedure, maintaining an acceptable performance with S/N > 14, efficiency close to 100% and few ghost hits.

  10. High-gain, high-bandwidth, rail-to-rail, constant-gm CMOS operational amplifier

    Science.gov (United States)

    Huang, Hong-Yi; Wang, Bo-Ruei

    2013-01-01

    This study presents a high-gain, high-bandwidth, constant-gm , rail-to-rail operational amplifier (op-amp). The constant transconductance is improved with a source-to-bulk bias control of an input pair. A source degeneration scheme is also adapted to the output stage for receiving wide input range without degradation of the gain. Additionally, several compensation schemes are employed to enhance the stability. A test chip is fabricated in a 0.18 µm complementary metal-oxide semiconductor process. The active area of the op-amp is 181 × 173 µm2 and it consumes a power of 2.41 mW at a supply voltage of 1.8 V. The op-amp achieves a dc gain of 94.3 dB and a bandwidth of 45 MHz when the output capacitive load is connected to an effective load of 42.5 pF. A class-AB output stage combining a slew rate (SR) boost circuit provides a sinking current of 6 mA and an SR of 17 V/µs.

  11. Optimising operational amplifiers by evolutionary algorithms and gm/Id method

    Science.gov (United States)

    Tlelo-Cuautle, E.; Sanabria-Borbon, A. C.

    2016-10-01

    The evolutionary algorithm called non-dominated sorting genetic algorithm (NSGA-II) is applied herein in the optimisation of operational transconductance amplifiers. NSGA-II is accelerated by applying the gm/Id method to estimate reduced search spaces associated to widths (W) and lengths (L) of the metal-oxide-semiconductor field-effect-transistor (MOSFETs), and to guarantee their appropriate bias levels conditions. In addition, we introduce an integer encoding for the W/L sizes of the MOSFETs to avoid a post-processing step for rounding-off their values to be multiples of the integrated circuit fabrication technology. Finally, from the feasible solutions generated by NSGA-II, we introduce a second optimisation stage to guarantee that the final feasible W/L sizes solutions support process, voltage and temperature (PVT) variations. The optimisation results lead us to conclude that the gm/Id method and integer encoding are quite useful to accelerate the convergence of the evolutionary algorithm NSGA-II, while the second optimisation stage guarantees robustness of the feasible solutions to PVT variations.

  12. Charge-sensitive amplifier

    Directory of Open Access Journals (Sweden)

    Startsev V. I.

    2008-02-01

    Full Text Available The authors consider design and circuit design techniques of reduction of the influence of the pyroelectric effect on operation of the charge sensitive amplifiers. The presented experimental results confirm the validity of the measures taken to reduce the impact of pyroelectric currents. Pyroelectric currents are caused by the influence of the temperature gradient on the piezoelectric sensor and on the output voltage of charge sensitive amplifiers.

  13. 46 CFR 111.12-7 - Voltage regulation and parallel operation.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Voltage regulation and parallel operation. 111.12-7... ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Generator Construction and Circuits § 111.12-7 Voltage regulation and parallel operation. Voltage regulation and parallel operation must meet: (a) For AC systems: sections...

  14. Bandwidth enhancement for parametric amplifiers operated in chirped multi-beam mode

    CERN Document Server

    Terranova, F; Pegoraro, F

    2008-01-01

    In this paper we discuss the bandwidth enhancement that can be achieved in multi-Joule OPCPA systems exploiting the tunability of parametric amplification. In particular, we consider a pair of single pass amplifiers based on DKDP, pumped by the second harmonic of Nd:glass and tuned to amplify adjacent regions of the signal spectrum. We demonstrate that a bandwidth enhancement up to 50% is possible in two configurations; in the first case, one of the two amplifiers is operated near its non-collinear broadband limit; to allow for effective recombination and recompression of the outgoing signals this configuration requires filtering and phase manipulation of the spectral tail of the amplified pulses. In the second case, effective recombination can be achieved simply by spectral filtering: in this configuration, the optimization of the parameters of the amplifiers (pulse, crystal orientation and crystal length) does not follow the recipes of non-collinear OPCPA.

  15. Operating Experiences of a Loss of Voltage Monitoring Program

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Eun-Chan [Korea Hydro and Nuclear Power Co. Ltd., Daejeon (Korea, Republic of)

    2015-10-15

    Loss of voltage (LOV) events continue to occur due to inadequate work management and random human errors. On February 26, 2015, regulators analyzed the root causes of LOV events and presented the results for the nuclear industry. Currently, KHNP uses a risk monitoring program, which is named 'LOV Monitor', for LOV prevention during pilot plant outages. This review introduces the operation experiences of LOV Monitor based on the evaluation results of a real event. The operation experiences of LOV Monitor in the pilot plants confirmed that this program could detect and reduce LOV possibilities from scheduling errors such as the simultaneous maintenance of energized trains and de-energized trains considering the physical conditions of the power circuit breakers. However, a maintenance culture that heeds the risk monitoring result must be strengthened in order to obtain substantial effects through applying LOV Monitor to the outage.

  16. Optical amplifier exhibiting net phase-mismatch selected to at least partially reduce gain-induced phase-matching during operation and method of operation

    Science.gov (United States)

    Feve, Jean-Philippe; Kliner, Dahv A. V.; Farrow; Roger L.

    2011-02-01

    An optical amplifier, such as an optical waveguide amplifier (e.g., an optical fiber amplifier or a planar waveguide) or a non-guiding optical amplifier, that exhibits a net phase-mismatch selected to at least partially reduce gain-induced phase-matching during operation thereof is disclosed. In one aspect of the invention, an optical amplifier structure includes at least one optical amplifier having a length and a gain region. The at least one optical amplifier exhibits a net phase-mismatch that varies along at least part of the length thereof selected to at least partially reduce gain-induced phase-matching during operation thereof.

  17. Modeling, Analysis and Design of Feedback Operational Amplifier for Undergraduate Studies in Electrical Engineering

    Directory of Open Access Journals (Sweden)

    Han Yang

    2012-12-01

    Full Text Available The analog electronics is a challenging subject for undergraduate students in electrical engineering, due to the complex combination of many previous subjects, such as linear circuit analysis, signal and system, linear control theory and some sort of mathematics. This paper presents the modeling, analysis and design of the operational amplifier, which is used as benchmark system for analog electronics, for undergraduate studies in electrical engineering. Followed by the introduction of the operation amplifier circuit, the design of feedback network for the operational amplifier using MATLAB is presented. The bandwidth and sensitivity analysis for the feedback control loop are also discussed. In order to enhance the stability margin and dynamic characteristics of the operational amplifier, the lead compensator is designed for the feedback loop by adding capacitive component to the feedback resistive network. The presented analysis and design method of the operational amplifier by using MATLAB/SIMULINK can be highly effective to compliment the classroom teaching for circuit design courses for undergraduate studies in electrical engineering.

  18. 30 CFR 57.12071 - Movement or operation of equipment near high-voltage powerlines.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Movement or operation of equipment near high-voltage powerlines. 57.12071 Section 57.12071 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION...-voltage powerlines. When equipment must be moved or operated near energized high-voltage powerlines...

  19. 30 CFR 56.12071 - Movement or operation of equipment near high-voltage power lines.

    Science.gov (United States)

    2010-07-01

    ...-voltage power lines. 56.12071 Section 56.12071 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... NONMETAL MINES Electricity § 56.12071 Movement or operation of equipment near high-voltage power lines. When equipment must be moved or operated near energized high-voltage powerlines (other than...

  20. A wiggler magnet for FEL low voltage operation

    Energy Technology Data Exchange (ETDEWEB)

    Al-Shamma`a, A.; Stuart, R.A.; Lucas, J.

    1995-12-31

    In low voltage FELs (ie, 200kV), operation is necessarily in the microwave frequency range for wiggler periods of the order of cms., so that a waveguide system is mandatory. Also, because of the relatively low velocity of the electron beam, the wiggle amplitude of the electron beam can be much larger than is normal for highly relativistic FELs. Both these factors mean that the electron trajectory must be carefully controlled to avoid beam collision with the waveguide walls. A wiggler system with half poles at entrance and exit is not an acceptable solution because of the offset is gives rise to the electron trajectory. Consequently, we have designed and constructed a wiggler magnet with exponential entrance and exit tapers for a minimal deflection and displacement of the electron beam. Simulations and experimental measurements showed that an on axis trajectory is easily obtainable.

  1. Solid-state repetitive generator with a gyromagnetic nonlinear transmission line operating as a peak power amplifier

    Science.gov (United States)

    Gusev, A. I.; Pedos, M. S.; Rukin, S. N.; Timoshenkov, S. P.

    2017-07-01

    In this work, experiments were made in which gyromagnetic nonlinear transmission line (NLTL) operates as a peak power amplifier of the input pulse. At such an operating regime, the duration of the input pulse is close to the period of generated oscillations, and the main part of the input pulse energy is transmitted only to the first peak of the oscillations. Power amplification is achieved due to the voltage amplitude of the first peak across the NLTL output exceeding the voltage amplitude of the input pulse. In the experiments, the input pulse with an amplitude of 500 kV and a half-height pulse duration of 7 ns is applied to the NLTL with a natural oscillation frequency of ˜300 MHz. At the output of the NLTL in 40 Ω coaxial transmission line, the pulse amplitude is increased to 740 kV and the pulse duration is reduced to ˜2 ns, which correspond to power amplification of the input pulse from ˜6 to ˜13 GW. As a source of input pulses, a solid-state semiconductor opening switch generator was used, which allowed carrying out experiments at pulse repetition frequency up to 1 kHz in the burst mode of operation.

  2. Switched-capacitor multiply-by-two amplifier with reduced capacitor mismatches sensitivity and full swing sample signal common-mode voltage

    Institute of Scientific and Technical Information of China (English)

    Xu Xinnan; Yao Suying; Xu Jiangtao; Nie Kaiming

    2012-01-01

    A switched-capacitor amplifier with an accurate gain of two that is insensitive to component mismatch is proposed.This structure is based on associating two sets of two capacitors in cross series during the amplification phase.This circuit permits the common-mode voltage of the sample signal to reach full swing.Using the chargecomplement technique,the proposed amplifier can reduce the impact of parasitic capacitors on the gain accuracy effectively.Simulation results show that as sample signal common-mode voltage changes,the difference between the minimum and maximum gain error is less than 0.03%.When the capacitor mismatch is increased from 0 to 0.2%,the gain error is deteriorated by 0.00015 %.In all simulations,the gain of amplifier is 69 dB.

  3. Low Power and Fast Transient High Swing CMOS Telescopic Operational Amplifier

    Directory of Open Access Journals (Sweden)

    Akshay Kumar Kansal

    2015-12-01

    Full Text Available CMOS telescopic operational amplifier with high-swing and high-performance is described in this paper. The swing is attained by using the tail and current source-transistors in deep-linear region. The resultant deprivation in parameters like differential gain, CMRR and added characteristics are recompensed by using regulatedcascode differential gain enhancement and a replica-tail feedback technique. Operating at power supply of 3.3V, the power consumption, slew rate and settling time are improved using transmission controlled pass circuitry and level amplifier. It is shown through simulations that the Op-Amp preserves its high CMRR and unity gain frequency.

  4. Extreme High and Low Temperature Operation of the Silicon-On-Insulator Type CHT-OPA Operational Amplifier

    Science.gov (United States)

    Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

    2008-01-01

    A new operational amplifier chip based on silicon-on-insulator technology was evaluated for potential use in extreme temperature environments. The CHT-OPA device is a low power, precision operational amplifier with rail-to-rail output swing capability, and it is rated for operation between -55 C and +225 C. A unity gain inverting circuit was constructed utilizing the CHT-OPA chip and a few passive components. The circuit was evaluated in the temperature range from -190 C to +200 C in terms of signal gain and phase shift, and supply current. The investigations were carried out to determine suitability of this device for use in space exploration missions and aeronautic applications under wide temperature incursion. Re-restart capability at extreme temperatures, i.e. power switched on while the device was soaked at extreme temperatures, was also investigated. In addition, the effects of thermal cycling under a wide temperature range on the operation of this high performance amplifier were determined. The results from this work indicate that this silicon-on-insulator amplifier chip maintained very good operation between +200 C and -190 C. The limited thermal cycling had no effect on the performance of the amplifier, and it was able to re-start at both -190 C and +200 C. In addition, no physical degradation or packaging damage was introduced due to either extreme temperature exposure or thermal cycling. The good performance demonstrated by this silicon-on-insulator operational amplifier renders it a potential candidate for use in space exploration missions or other environments under extreme temperatures. Additional and more comprehensive characterization is, however, required to establish the reliability and suitability of such devices for long term use in extreme temperature applications.

  5. High repetition rate Yb:CaF2 multipass amplifiers operating in the 100 mJ range

    OpenAIRE

    Dimitrios PAPADOPOULOS; Friebel, Florence; Pellegrina, Alain; Hanna, Marc; Camy, Patrice; Doualan, Jean-Louis; Moncorgé, Richard; Georges, Patrick; Druon, Frédéric

    2014-01-01

    International audience; — We present the research advances on the development of 50-200 mJ energy range diode-pumped Yb:CaF 2-based multipass amplifiers operating at relatively high repetition rates. These laser amplifiers are based on diverse innovative geometries. All these innovations aim to design compact, stable and reliable amplifiers adapted to our application that consists in pumping ultrashort-pulse OPCPA (optical parametric chirped pulse amplifier) systems in the frame of the Apollo...

  6. Optical Amplifier with Flat-Gain and Wideband Operation Utilizing Highly Concentrated Erbium-Doped Fibers

    Science.gov (United States)

    Hamida, B. A.; Cheng, X. S.; Naji, A. W.; Ahmad, H.; Al-Khateeb, W.; Khan, S.; Harun, S. W.

    In this paper, we proposed a flat-gain and wide-band erbium doped fiber amplifier (EDFA) using two chirped fiber Bragg grating (CFBG) in serial configuration for double-pass operation. The amplifier consists of two sections of Erbium-doped fiber (EDF) operating in C-band and L-band respectively. A CFBG is used in each section to reflect the amplified signal back to the active area so that the overall gain spectrum can be enhanced and flattened. It is also observed that the gain of the amplifier produces a relatively higher gain with the Bismuth-based EDF (Bi-EDF) in the first stage compared to that of silica-based EDF (Si-EDF), especially in a longer wavelength region. The small signal gain of more than 19 dB is obtained within a wavelength region from 1545 to 1605 nm by the use of Bi-EDF with a small noise figure penalty. With a Si-EDF, the flat gain spectrum is observed within a wavelength region ranging from 1535 nm to 1605 nm with a gain variation of less than 2 dB at input signal of 0 dBm. This shows that the proposed serial double-pass amplifier may find its broad applications in wavelength division multiplexing long-haul systems as well as local optical networks.

  7. Wide Operational Range Processor Power Delivery Design for Both Super-Threshold Voltage and Near-Threshold Voltage Computing

    Institute of Scientific and Technical Information of China (English)

    Xin He; Gui-Hai Yan; Yin-He Han; Xiao-Wei Li

    2016-01-01

    The load power range of modern processors is greatly enlarged because many advanced power management techniques are employed, such as dynamic voltage frequency scaling, Turbo Boosting, and near-threshold voltage (NTV) technologies. However, because the efficiency of power delivery varies greatly with different load conditions, conventional power delivery designs cannot maintain high efficiency over the entire voltage spectrum, and the gained power saving may be offset by power loss in power delivery. We propose SuperRange, a wide operational range power delivery unit. SuperRange complements the power delivery capability of on-chip voltage regulator and off-chip voltage regulator. On top of SuperRange, we analyze its power conversion characteristics and propose a voltage regulator (VR) aware power management algorithm. Moreover, as more and more cores have been integrated on a singe chip, multiple SuperRange units can serve as basic building blocks to build, in a highly scalable way, more powerful power delivery subsystem with larger power capacity. Experimental results show SuperRange unit offers 1x and 1.3x higher power conversion efficiency (PCE) than other two conventional power delivery schemes at NTV region and exhibits an average 70%PCE over entire operational range. It also exhibits superior resilience to power-constrained systems.

  8. SEMICONDUCTOR INTEGRATED CIRCUITS: A novel fully differential telescopic operational transconductance amplifier

    Science.gov (United States)

    Tianwang, Li; Bo, Ye; Jinguang, Jiang

    2009-08-01

    A novel fully differential telescopic operational transconductance amplifier (OTA) is proposed. An additional PMOS differential pair is introduced to improve the unit-gain bandwidth of the telescopic amplifier. At the same time, the slew rate is enhanced by the auxiliary slew rate boost circuits. The proposed OTA is designed in a 0.18μm CMOS process. Simulation results show that there is a 49% improvement in the unit-gain bandwidth compared to that of a conventional OTA; moreover, the DC gain and the slew rate are also enhanced.

  9. Properties of dysprosium-doped gallium lanthanum sulfide fiber amplifiers operating at 1.3 microm.

    Science.gov (United States)

    Samson, B N; Schweizer, T; Hewak, D W; Laming, R I

    1997-05-15

    In light of recent progress in the fabrication of gallium lanthanum sulfide (GaLaS) fibers, we have modeled the performance of dysprosium-doped GaLaS fiber amplifiers operating at 1.3 microm . Based on experimental data, we find that the incorporation of a codopant (terbium) in the fiber core significantly shortens the optimum amplifier length from >30 m to approximately 3 m . Such a device may be practical, given the fiber losses currently achieved in GaLaS fibers.

  10. Efficient operation of a high-power {ital X}-band traveling wave tube amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Wang, P.; Xu, Z.; Ivers, J.D.; Nation, J.A.; Naqvi, S.; Schachter, L. [Cornell University, Ithaca, New York 14853 (United States)

    1999-10-01

    We report experimental results demonstrating 54{percent} power conversion efficiency (43{percent} energy conversion efficiency), from a two-stage {ital X}-band traveling wave tube amplifier designed for high-power operation. The first stage of the amplifier is a 12-cm-long Boron Nitride dielectric section used to modulate the electron beam. The second stage consists of a long high-phase-velocity bunching section followed by a short low-phase-velocity output section. Output powers of up to 78 MW with narrow spectrum width were obtained with {approximately}700 kV, {approximately}200 A beam. {copyright} {ital 1999 American Institute of Physics.}

  11. Low Power and Fast Transient High Swing CMOS Telescopic Operational Amplifier

    OpenAIRE

    Akshay Kumar Kansal; Asst Prof. Gayatri Sakya

    2015-01-01

    CMOS telescopic operational amplifier with high-swing and high-performance is described in this paper. The swing is attained by using the tail and current source-transistors in deep-linear region. The resultant deprivation in parameters like differential gain, CMRR and added characteristics are recompensed by using regulatedcascode differential gain enhancement and a replica-tail feedback technique. Operating at power supply of 3.3V, the power consumption, slew rate and settling t...

  12. Choice of operating voltage for a transmission electron microscope

    Energy Technology Data Exchange (ETDEWEB)

    Egerton, R.F., E-mail: regerton@ualberta.ca

    2014-10-15

    An accelerating voltage of 100–300 kV remains a good choice for the majority of TEM or STEM specimens, avoiding the expense of high-voltage microscopy but providing the possibility of atomic resolution even in the absence of lens-aberration correction. For specimens thicker than a few tens of nm, the image intensity and scattering contrast are likely to be higher than at lower voltage, as is the visibility of ionization edges below 1000 eV (as required for EELS elemental analysis). In thick (>100 nm) specimens, higher voltage ensures less beam broadening and better spatial resolution for STEM imaging and EDX spectroscopy. Low-voltage (e.g. 30 kV) TEM or STEM is attractive for a very thin (e.g. 10 nm) specimen, as it provides higher scattering contrast and fewer problems for valence-excitation EELS. Specimens that are immune to radiolysis suffer knock-on damage at high current densities, and this form of radiation damage can be reduced or avoided by choosing a low accelerating voltage. Low-voltage STEM with an aberration-corrected objective lens (together with a high-angle dark-field detector and/or EELS) offers atomic resolution and elemental identification from very thin specimens. Conventional TEM can provide atomic resolution in low-voltage phase-contrast images but requires correction of chromatic aberration and preferably an electron-beam monochromator. Many non-conducting (e.g. organic) specimens damage easily by radiolysis and radiation damage then determines the TEM image resolution. For bright-field scattering contrast, low kV can provide slightly better dose-limited resolution if the specimen is very thin (a few nm) but considerably better resolution is possible from a thicker specimen, for which higher kV is required. Use of a phase plate in a conventional TEM offers the most dose-efficient way of achieving atomic resolution from beam-sensitive specimens. - Highlights: • 100–300 kV accelerating voltage is suitable for TEM specimens of typical

  13. Photonic-crystal nano-photodetector with ultrasmall capacitance for on-chip light-to-voltage conversion without an amplifier

    OpenAIRE

    Nozaki, Kengo; Matsuo, Shinji; Fujii, Takuro; Takeda, Koji; Ono, Masaaki; Shakoor, Abdul; Kuramochi, Eiichi; Notomi, Masaya

    2016-01-01

    The power consumption of a conventional photoreceiver is dominated by that of the electric amplifier connected to the photodetector (PD). An ultralow-capacitance PD can overcome this limitation, because it can generate sufficiently large voltage without an amplifier when combined with a high-impedance load. In this work, we demonstrate an ultracompact InGaAs PD based on a photonic crystal waveguide with a length of only 1.7 μm and a capacitance of less than 1 fF. Despite the small size of the...

  14. Reduction of Voltage Harmonics for Parallel-operated Inverters

    DEFF Research Database (Denmark)

    Zhong, Qing-Chang; Blaabjerg, Frede; Guerrero, Josep M.

    2011-01-01

    The inherent limitations of the conventional droop control scheme have recently been revealed and a robust droop controller to achieve exact proportional load sharing has been proposed. This paper continues the work with a strategy to improve the voltage quality so that the total harmonic...... distortion of the output voltage can be maintained small even when nonlinear loads are connected. Experimental results are provided to verify the analysis and design....

  15. Investigations of electronic amplifiers supplying a piezobimorph actuator

    Science.gov (United States)

    Milecki, Andrzej; Regulski, Roman

    2016-10-01

    Piezoelectric bending actuators, also known as bimorphs, are characterized by very good dynamic properties and by displacements in a range of a few millimeters. Therefore these actuators are used in a wide range of applications. However their usage is limited because they require supplying amplifiers with output voltage of about 200 V, which are rather expensive. This paper presents investigation results of such amplifiers with high voltage output. The model of a piezobending actuator is proposed and implemented in Matlab-Simulink software in order to simulate the behavior of the actuator supplied by the amplifiers. The simulation results are presented and compared with investigation results of high voltage amplifier used for supplying a piezoactuator. The influence of current limitation of operational amplifier on the actuator current is tested. Finally, a low cost audio power amplifier is proposed to control the piezobender actuator (as a cheaper alternative to the high-voltage amplifier) and its investigations results are presented in the paper.

  16. High Voltage Operation of Helical Pulseline Structures for Ion Acceleration

    CERN Document Server

    Waldron, William; Reginato, Lou

    2005-01-01

    The basic concept for the acceleration of heavy ions using a helical pulseline requires the launching of a high voltage traveling wave with a waveform determined by the beam transport physics in order to maintain stability and acceleration.* This waveform is applied to the front of the helix, creating over the region of the ion bunch a constant axial acceleration electric field that travels down the line in synchronism with the ions. Several methods of driving the helix have been considered. Presently, the best method of generating the waveform and also maintaining the high voltage integrity appears to be a transformer primary loosely coupled to the front of the helix, generating the desired waveform and achieving a voltage step-up from primary to secondary (the helix). This can reduce the drive voltage that must be brought into the helix enclosure through the feedthroughs by factors of 5 or more. The accelerating gradient is limited by the voltage holding of the vacuum insulator, and the material and helix g...

  17. A compact nanopower low output impedance CMOS operational amplifier for wireless intraocular pressure recordings.

    Science.gov (United States)

    Dresher, Russell P; Irazoqui, Pedro P

    2007-01-01

    Wireless sensing has shown potential benefits for the continuous-time measurement of physiological data. One such application is the recording of intraocular pressure (IOP) for patients with glaucoma. Ultra-low-power circuits facilitate the use of inductively-coupled power for implantable wireless systems. Compact circuit size is also desirable for implantable systems. As a first step towards the realization of such circuits, we have designed a compact, ultra-low-power operational amplifier which can be used to record IOP. This paper presents the measured results of a CMOS operational amplifier that can be incorporated with a wireless IOP monitoring system or other low-power application. It has a power consumption of 736 nW, chip area of 0.023 mm2, and output impedance of 69 Omega to drive low-impedance loads.

  18. The practical operational-amplifier gyrator circuit for inductorless filter synthesis

    Science.gov (United States)

    Sutherland, W. C.

    1976-01-01

    A literature is reported for gyrator circuits utilizing operational amplifiers as the active device. A gyrator is a two port nonreciprocal device with the property that the input impedance is proportional to the reciprocal of the load impedance. Following an experimental study, the gyrator circuit with optimum properties was selected for additional testing. A theoretical analysis was performed and compared to the experimental results for excellent agreement.

  19. Synergistic effect of mixed neutron and gamma irradiation in bipolar operational amplifier OP07

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Liu, E-mail: liuyan@nint.ac.cn [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an 710024 (China); School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China); Wei, Chen; Shanchao, Yang; Xiaoming, Jin [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an 710024 (China); Chaohui, He [School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China)

    2016-09-21

    This paper presents the synergistic effects in bipolar operational amplifier OP07. The radiation effects are studied by neutron beam, gamma ray, and mixed neutron/gamma ray environments. The characterateristics of the synergistic effects are studied through comparison of different experiment results. The results show that the bipolar operational amplifier OP07 exhibited significant synergistic effects in the mixed neutron and gamma irradiation. The bipolar transistor is identified as the most radiation sensitive unit of the operational amplifier. In this paper, a series of simulations are performed on bipolar transistors in different radiation environments. In the theoretical simulation, the geometric model and calculations based on the Medici toolkit are built to study the radiation effects in bipolar components. The effect of mixed neutron and gamma irradiation is simulated based on the understanding of the underlying mechanisms of radiation effects in bipolar transistors. The simulated results agree well with the experimental data. The results of the experiments and simulation indicate that the radiation effects in the bipolar devices subjected to mixed neutron and gamma environments is not a simple combination of total ionizing dose (TID) effects and displacement damage. The data suggests that the TID effect could enhance the displacement damage. The synergistic effect should not be neglected in complex radiation environments.

  20. Write operation in MRAM with voltage controlled magnetic anisotropy

    Science.gov (United States)

    Munira, Kamaram; Pandey, Sumeet; Sandhu, Gurtej

    In non-volatile Magnetic RAM, information is saved in the bistable configuration of the free layer in a magnetic tunnel junction (MTJ). New information can be written to the free layer through magnetic induction (Toggle MRAM) or manipulation of magnetization using electric currents (Spin Transfer Torque MRAM or STT-MRAM). Both of the writing methods suffer from a shortcoming in terms of energy efficiency. This limitation on energy performance is brought about by the need for driving relatively large electrical charge currents through the devices for switching. In STT-MRAM, the nonzero voltage drop across the resistive MTJ leads to significant power dissipation. An energy efficient way to write may be with the assistance of voltage controlled magnetic anisotropy (VCMA), where voltage applied across the MTJ creates an electric field that modulates the interfacial anisotropy between the insulator and free layer. However, VCMA cannot switch the free layer completely by 180 degree rotation of magnetization. It can lower the barrier between the two stable configurations or at best, cancel the barrier, allowing 90 degree rotation. A second mechanism, spin torque or magnetic field, is needed to direct the final switching destination.

  1. Current feedback operational amplifiers as fast charge sensitive preamplifiers for photomultiplier read out

    Energy Technology Data Exchange (ETDEWEB)

    Giachero, A; Gotti, C; Maino, M; Pessina, G, E-mail: claudio.gotti@mib.infn.it [INFN - Sezione di Milano-Bicocca, I-20126, Milano (Italy)

    2011-05-01

    Fast charge sensitive preamplifiers were built using commercial current feedback operational amplifiers for fast read out of charge pulses from a photomultiplier tube. Current feedback opamps prove to be particularly well suited for this application where the charge from the detector is large, of the order of one million electrons, and high timing resolution is required. A proper circuit arrangement allows very fast signals, with rise times down to one nanosecond, while keeping the amplifier stable. After a review of current feedback circuit topology and stability constraints, we provide a 'recipe' to build stable and very fast charge sensitive preamplifiers from any current feedback opamp by adding just a few external components. The noise performance of the circuit topology has been evaluated and is reported in terms of equivalent noise charge.

  2. Current feedback operational amplifiers as fast charge sensitive preamplifiers for photomultiplier read out

    Science.gov (United States)

    Giachero, A.; Gotti, C.; Maino, M.; Pessina, G.

    2011-05-01

    Fast charge sensitive preamplifiers were built using commercial current feedback operational amplifiers for fast read out of charge pulses from a photomultiplier tube. Current feedback opamps prove to be particularly well suited for this application where the charge from the detector is large, of the order of one million electrons, and high timing resolution is required. A proper circuit arrangement allows very fast signals, with rise times down to one nanosecond, while keeping the amplifier stable. After a review of current feedback circuit topology and stability constraints, we provide a "recipe" to build stable and very fast charge sensitive preamplifiers from any current feedback opamp by adding just a few external components. The noise performance of the circuit topology has been evaluated and is reported in terms of equivalent noise charge.

  3. A flexible low-voltage ride-through operation for the distributed generation converters

    DEFF Research Database (Denmark)

    Chen, Hsin-Chih; Lee, Chia-Tse; Cheng, Po-Tai;

    2013-01-01

    -sequence current injection method is proposed to meet the low-voltage ride through (LVRT) requirement. The proposed method predefined a current constraint to avoid the overcurrent during the LVRT operation and adjust the positive-sequence reactive current to reduce the DC-bus voltage ripple. Comparisons...

  4. Empirical Verification of Fault Models for FPGAs Operating in the Subcritical Voltage Region

    DEFF Research Database (Denmark)

    Birklykke, Alex Aaen; Koch, Peter; Prasad, Ramjee

    2013-01-01

    We present a rigorous empirical study of the bit-level error behavior of field programmable gate arrays operating in the subcricital voltage region. This region is of significant interest as voltage-scaling under normal circumstances is halted by the first occurrence of errors. However, accurate...

  5. A 180-Vpp Integrated Linear Amplifier for Ultrasonic Imaging Applications in a High-Voltage CMOS SOI Technology.

    Science.gov (United States)

    Sun, Kexu; Gao, Zheng; Gui, Ping; Wang, Rui; Oguzman, Ismail; Xu, Xiaochen; Vasanth, Karthik; Zhou, Qifa; Shung, K Kirk

    2015-02-01

    This brief presents a monolithically integrated fully differential linear HV amplifier as the driver of an ultrasonic transducer. The linear amplifier is capable of transmitting HV arbitrary signals with a very low harmonic distortion, which is suitable for tissue harmonic imaging and other ultrasonic modes for enhanced imaging quality. The amplifier is designed and implemented using the 0.7-μm CMOS silicon-on-insulator process with 120-V devices. The amplifier, when driving a load of 300 pF in parallel with 100 Ω, is capable of transmitting a sine-wave signal with a frequency of up to 4.4 MHz, a maximum signal swing of 180 Vpp, and a second-order harmonic distortion (HD2) of -56 dBc but only dissipating an average power of 62 mW with a 0.1% duty cycle.

  6. A magnesium–sodium hybrid battery with high operating voltage

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Hui; Li, Yifei; Liang, Yanliang; Li, Guosheng; Sun, Cheng-Jun; Ren, Yang; Lu, Yuhao; Yao, Yan

    2016-06-10

    We report a high performance magnesium-sodium hybrid battery utilizing a magnesium-sodium dual-salt electrolyte, a magnesium anode, and a Berlin green cathode. The cell delivers an average discharge voltage of 2.2 V and a reversible capacity of 143 mAh g-1. We also demonstrate the cell with an energy density of 135 Wh kg-1 and a high power density of up to 1.67 kW kg-1.

  7. Study on laser characteristics of Ho:YLF regenerative amplifiers: Operation regimes, gain dynamics, and highly stable operation points

    Science.gov (United States)

    Kroetz, P.; Ruehl, A.; Calendron, A.-L.; Chatterjee, G.; Cankaya, H.; Murari, K.; Kärtner, F. X.; Hartl, I.; Miller, R. J. D.

    2017-04-01

    We present a comprehensive study of laser pulse amplification of Ho:YLF regenerative amplifiers (RAs) with respect to operation regimes, gain dynamics, and output pulse stability. The findings are expected to be more generic than for this specific gain material. Operation regimes are distinguished with respect to pulse energy and the appearance of pulse instability, and are studied as a function of the repetition rate, seed energy, and pump intensity. The corresponding gain dynamics are presented, identifying highly stable operation points related to high-gain build-up during pumping and high-gain depletion during pulse amplification. Such operation points are studied numerically and experimentally as a function of several parameters, thereby achieving, for our Ho:YLF RA, highly stable output pulses with measured fluctuations of only 0.19% (standard deviation).

  8. Investigation of Voltage Unbalance Problems In Electric Arc Furnace Operation Model

    OpenAIRE

    Yacine DJEGHADER; Hocine LABAR

    2013-01-01

    In modern steel industry, Electric Arc Furnaces are widely used for iron and scarp melting. The operation of electric arc furnace causes many power quality problems such as harmonics, unbalanced voltage and flicker. The factors that affect Electric arc furnace operation are the melting or refining materials, melting stage, electrodes position (arc length), electrode arm control and short circuit power of the feeder, so, arc voltages, current and power are defined as a nonlinear function of ar...

  9. Guidelines for Distribution System Operators on Reactive Power Provision by Electric Vehicles in Low Voltage Grids

    DEFF Research Database (Denmark)

    Zecchino, Antonio; Marinelli, Mattia; Træholt, Chresten

    2017-01-01

    The increasing success of electric vehicles is bringing new technical challenges to power system operators. This work intends to provide guidelines for distribution system operators in terms of reactive power requirements when evaluating and authorizing electric vehicles supply equipment with fast...... the amount of reactive power that an individual electric vehicle is expected to provide when connected to a low voltage feeder, in order to benefit of the desired voltage rise effect in comparison to the case of unitary power factor....

  10. Adaptive Synchronization of Chaotic Systems considering Performance Parameters of Operational Amplifiers

    Directory of Open Access Journals (Sweden)

    Sergio Ruíz-Hernández

    2015-01-01

    Full Text Available This paper addresses an adaptive control approach for synchronizing two chaotic oscillators with saturated nonlinear function series as nonlinear functions. Mathematical models to characterize the behavior of the transmitter and receiver circuit were derived, including in the latter the adaptive control and taking into account, for both chaotic oscillators, the most influential performance parameters associated with operational amplifiers. Asymptotic stability of the full synchronization system is studied by using Lyapunov direct method. Theoretical derivations and related results are experimentally validated through implementations from commercially available devices. Finally, the full synchronization system can easily be reproducible at a low cost.

  11. Challenges of VDD scaling for analog circuits: an amplifier

    Science.gov (United States)

    Bargagli-Stoffi, A.; Sauerbrey, J.; Wang, J.; Schmitt-Landsiedel, D.

    2005-05-01

    With the shrinking of the device dimensions, the power supply voltage value is continuously decreasing. Since the threshold voltage value does not decrease as much as the power supply and the drain source saturation voltage becomes an important fraction of the power supply, many amplifier architectures are no more suitable for modern processes. A transconductance amplifier based on current mirrors is analyzed highlighting the main challenges of a low-voltage analog design. Among the many proposed amplifier architectures, a topology based on current mirrors has been chosen as the most promising to operate with low voltages. Simulations with 90nm CMOS prove the feasibility of circuit operation with satisfactory performance at an operating power supply voltage as low as 0.6V.

  12. Investigation of the effect of noise on the operation of the charge sensitive amplifier with compensated pyroelectric interference

    Directory of Open Access Journals (Sweden)

    Starcev V. I.

    2015-08-01

    Full Text Available The authors consider the problems that arise during the operation of the charge sensitive amplifier (CSA in critical conditions. Simplified schemes and mathematical models of the CSA are presented in order to study the effect of noise of operational amplifier and high-resistance resistor of negative feedback loop. The dependence of the CSA noise level on the pyroelectric interference compensation value is studied. Mathematical analysis data is confirmed by computer circuit simulation.

  13. Charging of capacitors with double switch. The principle of operation of auto-zero and chopper-stabilized DC amplifiers

    CERN Document Server

    Yordanov, Vasil G; Manolev, Stojan G; Mishonov, Todor M

    2015-01-01

    The principle of operation of auto-zero and chopper-stabilized DC amplifiers, which is realized in many contemporary operational amplifiers is illustrated by a simple experimental setup given at the Open Experimental Physics Olympiad 2014 - "The Day of the Capacitor", held in Sofia and Gevgelija. The Olympiad was organized by the Sofia Branch of the Union of Physicists in Bulgaria and the Regional Society of Physicists of Strumica, Macedonia. In addition to the solution of the secondary school task in the paper is given a detailed engineering description of the patent by Edwin Goldberg and Jules Lehmann, Stabilized direct current amplifier, U.S. Patent 2,684,999 (1949).

  14. Realization of Integrable Incommensurate-Fractional-Order-Rössler-System Design Using Operational Transconductance Amplifiers (OTAs) and Its Experimental Verification

    Science.gov (United States)

    Dar, Mohammad Rafiq; Kant, Nasir Ali; Khanday, Farooq Ahmad

    In this paper, electronic implementation of fractional-order Rössler system using operational transconductance amplifiers (OTAs) is presented which until now was only being investigated through numerical simulations. The realization offers the benefits of low-voltage implementation, integrability and electronic tunability. In addition, the proposed circuit is a MOS only design (as no BJTs have been used) which contains only grounded components and is therefore suitable for monolithic VLSI design. The chaotic behavior of the fractional-order Rössler system in consideration with the incommensurate orders has been demonstrated which finds many applications in several fields. The theoretical predictions of the proposed implementation have been verified through experimentation and HSPICE simulator using Austrian Micro System (AMS) 0.35μm CMOS process and the obtained results have been found in good agreement with the Matlab simulink theoretical results obtained using FOMCON simulink toolbox. Besides, a secure message communication system has been considered to demonstrate fully the usefulness of the chaotic system.

  15. Investigation of Voltage Unbalance Problems In Electric Arc Furnace Operation Model

    Directory of Open Access Journals (Sweden)

    Yacine DJEGHADER

    2013-06-01

    Full Text Available In modern steel industry, Electric Arc Furnaces are widely used for iron and scarp melting. The operation of electric arc furnace causes many power quality problems such as harmonics, unbalanced voltage and flicker. The factors that affect Electric arc furnace operation are the melting or refining materials, melting stage, electrodes position (arc length, electrode arm control and short circuit power of the feeder, so, arc voltages, current and power are defined as a nonlinear function of arc length. This study focuses on investigation of unbalanced voltage due to Electrics Arc Furnace operation mode. The simulation results show the major problem of unbalanced voltage affecting secondary of furnace transformer is caused by the different continues movement of electrodes.

  16. Low Voltage Power Supply Incorporating Ceramic Transformer

    CERN Document Server

    Imori, M

    2007-01-01

    A low voltage power supply provides the regulated output voltage of 1 V from the supply voltage around 48 V. The low voltage power supply incorporates a ceramic transformer which utilizes piezoelectric effect to convert voltage. The ceramic transformer isolates the secondary from the primary, thus providing the ground isolation between the supply and the output voltages. The ceramic transformer takes the place of the conventional magnetic transformer. The ceramic transformer is constructed from a ceramic bar and does not include any magnetic material. So the low voltage power supply can operate under a magnetic field. The output voltage is stabilized by feedback. A feedback loop consists of an error amplifier, a voltage controlled oscillator and a driver circuit. The amplitude ratio of the transformer has dependence on the frequency, which is utilized to stabilize the output voltage. The low voltage power supply is investigated on the analogy of the high voltage power supply similarly incorporating the cerami...

  17. Incorporating voltage security into the planning, operation and monitoring of restructured electric energy markets

    Science.gov (United States)

    Nair, Nirmal-Kumar

    As open access market principles are applied to power systems, significant changes are happening in their planning, operation and control. In the emerging marketplace, systems are operating under higher loading conditions as markets focus greater attention to operating costs than stability and security margins. Since operating stability is a basic requirement for any power system, there is need for newer tools to ensure stability and security margins being strictly enforced in the competitive marketplace. This dissertation investigates issues associated with incorporating voltage security into the unbundled operating environment of electricity markets. It includes addressing voltage security in the monitoring, operational and planning horizons of restructured power system. This dissertation presents a new decomposition procedure to estimate voltage security usage by transactions. The procedure follows physical law and uses an index that can be monitored knowing the state of the system. The expression derived is based on composite market coordination models that have both PoolCo and OpCo transactions, in a shared stressed transmission grid. Our procedure is able to equitably distinguish the impacts of individual transactions on voltage stability, at load buses, in a simple and fast manner. This dissertation formulates a new voltage stability constrained optimal power flow (VSCOPF) using a simple voltage security index. In modern planning, composite power system reliability analysis that encompasses both adequacy and security issues is being developed. We have illustrated the applicability of our VSCOPF into composite reliability analysis. This dissertation also delves into the various applications of voltage security index. Increasingly, FACT devices are being used in restructured markets to mitigate a variety of operational problems. Their control effects on voltage security would be demonstrated using our VSCOPF procedure. Further, this dissertation investigates

  18. Cryogenic operation of a 24 GHz MMIC SiGe HBT medium power amplifier

    Science.gov (United States)

    Qin, Guoxuan; Jiang, Ningyue; Seo, Jung-Hun; Cho, Namki; Ponchak, George E.; van der Weide, Daniel; Ma, Pingxi; Stetson, Scott; Racanelli, Marco; Ma, Zhenqiang

    2010-12-01

    The performance of a SiGe heterojunction bipolar transistor (HBT) millimetre-wave power amplifier (PA) operating at cryogenic temperature was reported and analysed for the first time. A 24 GHz two-stage medium PA employing common-emitter and common-base SiGe power HBTs in the first and the second stage, respectively, showed a significant power gain increase at 77 K in comparison with that measured at room temperature. Detailed analyses indicate that cryogenic operation of SiGe HBT-based PAs mainly affects (improves) the performance of the SiGe HBTs in the circuits due to transconductance enhancement through magnified, favourable changes of SiGe bandgap due to cooling (ΔEg/kT) and minimized thermal effects, with little influence on the passive components of the circuits.

  19. Assessment of the operating conditions of coordinated Q-V controller within secondary voltage control system

    Directory of Open Access Journals (Sweden)

    Arnautović Dušan

    2014-01-01

    Full Text Available The paper, discusses the possibility to use coordinated Q-V controller (CQVC to perform secondary voltage control at the power plant level. The CQVC performs the coordination of the synchronous generators' (SG reactive power outputs in order to maintain the same total reactive power delivered by the steam power plant (SPP, while at the same time maintaining a constant voltage with programmed reactive droop characteristic at the SPP HV busbar. This busbar is the natural pilot node for secondary voltage control at HV level as the node with maximum power production and maximum power consumption. In addition to voltage control, the CQVC maintains the uniform allocation of reactive power reserves at all SGs in the power plant. This is accomplished by setting the reactive power of each SG at given operating point in accordance to the available reactive power of the same SG at that point. Different limitations imposed by unit's and plant equipment are superimposed on original SG operating chart (provided by the manufacturer in order to establish realistic limits of SG operation at given operating point. The CQVC facilitates: i practical implementation of secondary voltage control in power system, as it is capable of ensuring delivery of reactive power as requested by regional/voltage control while maintaining voltage at system pilot node, ii the full deployment of available reactive power of SGs which in turn contributes to system stability, iii assessment of the reactive power impact/contribution of each generator in providing voltage control as ancillary service. Furthermore, it is also possible to use CQVC to pricing reactive power production cost at each SG involved and to design reactive power bidding structure for transmission network devices by using recorded data. Practical exploitation experience acquired during CQVC continuous operation for over two years enabled implementation of the optimal setting of reference voltage and droop on daily

  20. Low power RF amplifier circuit for ion trap applications

    Science.gov (United States)

    Noriega, J. R.; García-Delgado, L. A.; Gómez-Fuentes, R.; García-Juárez, A.

    2016-09-01

    A low power RF amplifier circuit for ion trap applications is presented and described. The amplifier is based on a class-D half-bridge amplifier with a voltage mirror driver. The RF amplifier is composed of an RF class-D amplifier, an envelope modulator to ramp up the RF voltage during the ion analysis stage, a detector or amplitude demodulation circuit for sensing the output signal amplitude, and a feedback amplifier that linearizes the steady state output of the amplifier. The RF frequency is set by a crystal oscillator and the series resonant circuit is tuned to the oscillator frequency. The resonant circuit components have been chosen, in this case, to operate at 1 MHz. In testings, the class-D stage operated at a maximum of 78 mW at 1.1356 MHz producing 225 V peak.

  1. A novel single phase buck PFC converter in discontinuous capacitor voltage mode operation

    Institute of Scientific and Technical Information of China (English)

    邓超平; 凌志斌; 叶芃生

    2003-01-01

    A novel single-phase Buck converter for power factor correction is proposed. It features simple control due to the constant duty ratio PWM used. It can obtain unity power factor by selecting a suitable LC filter at its input to force the voltage of capacitor to operate in discontinuous capacitor voltage mode. And by using another resonant LC filter at its output, it can not only eliminate the input current distortion at the vicinity of the zero crossing of the supply but also drastically reduce the 100 Hz output voltage ripple. The validity of analysis is confirmed by simulation results and experimental results.

  2. Methods, systems and apparatus for controlling third harmonic voltage when operating a multi-space machine in an overmodulation region

    Energy Technology Data Exchange (ETDEWEB)

    Perisic, Milun; Kinoshita, Michael H; Ranson, Ray M; Gallegos-Lopez, Gabriel

    2014-06-03

    Methods, system and apparatus are provided for controlling third harmonic voltages when operating a multi-phase machine in an overmodulation region. The multi-phase machine can be, for example, a five-phase machine in a vector controlled motor drive system that includes a five-phase PWM controlled inverter module that drives the five-phase machine. Techniques for overmodulating a reference voltage vector are provided. For example, when the reference voltage vector is determined to be within the overmodulation region, an angle of the reference voltage vector can be modified to generate a reference voltage overmodulation control angle, and a magnitude of the reference voltage vector can be modified, based on the reference voltage overmodulation control angle, to generate a modified magnitude of the reference voltage vector. By modifying the reference voltage vector, voltage command signals that control a five-phase inverter module can be optimized to increase output voltages generated by the five-phase inverter module.

  3. Design and Characterization of two stage High-Speed CMOS Operational Amplifier

    Directory of Open Access Journals (Sweden)

    Rahul Chaudhari

    2014-03-01

    Full Text Available A method described in this paper is to design a Two Stage CMOS operational amplifier and analyze the effect of various aspect ratios on the characteristics of this Op-Amp, which operates at 1.8V power supply using tsmc 0.18μm CMOS technology. In this paper trade-off curves are computed between all characteristics such as Gain, PM, GBW, ICMRR, CMRR, Slew Rate etc. The OPAMP designed is a two-stage CMOS OPAMP. The OPAMP is designed to exhibit a unity gain frequency of 14MHz and exhibits a gain of 59.98dB with a 61.235 phase margin. Design has been carried out in Mentor graphics tools. Simulation results are verified using Model Sim Eldo and Design Architect IC. The task of CMOS operational amplifiers (Op-Amps design optimization is investigated in this work. This Paper focused on the optimization of various aspect ratios, which gave the result of different parameter. When this task is analyzed as a search problem, it can be translated into a multi-objective optimization application in which various Op-Amps’ specifications have to be taken into account, i.e., Gain, GBW (gain-bandwidth product, phase margin and others. The results are compared with respect to standard characteristics of the op-amp with the help of graph and table. Simulation results agree with theoretical predictions. Simulations confirm that the settling time can be further improved by increasing the value of GBW, the settling time is achieved 19ns. It has been demonstrated that when W/L increases the parameters GBW increases and settling time reduces.

  4. Operating Regime for a Backward Raman Laser Amplifier in Preformed Plasma

    Energy Technology Data Exchange (ETDEWEB)

    Daniel S. Clark; Nathaniel J. Fisch

    2003-02-06

    A critical issue in the generation of ultra-intense, ultra-short laser pulses by backward Raman scattering in plasma is the stability of the pumping pulse to premature backscatter from thermal fluctuations in the preformed plasma. Malkin et al. [V.M. Malkin, et al., Phys. Rev. Lett. 84 (6):1208-1211, 2000] demonstrated that density gradients may be used to detune the Raman resonance in such a way that backscatter of the pump from thermal noise can be stabilized while useful Raman amplification persists. Here plasma conditions for which the pump is stable to thermal Raman backscatter in a homogeneous plasma and the density gradients necessary to stabilize the pump for other plasma conditions are quantified. Other ancillary constraints on a Raman amplifier are also considered to determine a specific region in the Te-he plane where Raman amplification is feasible. By determining an operability region, the degree of uncertainty in density or temperature tolerable for an experimental Raman amplifier is thus also identified. The fluid code F3D, which includes the effects of thermal fluctuations, is used to verify these analytic estimates.

  5. Impact of gate-source/drain channel architecture on the performance of an operational transconductance amplifier (OTA)

    Science.gov (United States)

    Kranti, Abhinav; Rashmi; Armstrong, G. Alastair

    2009-11-01

    In this work, we report on the significance of gate-source/drain extension region (also known as underlap design) optimization in double gate (DG) FETs to improve the performance of an operational transconductance amplifier (OTA). It is demonstrated that high values of intrinsic voltage gain (AVO_OTA) > 55 dB and unity gain frequency (fT_OTA) ~ 57 GHz in a folded cascode OTA can be achieved with gate-underlap channel design in 60 nm DG MOSFETs. These values correspond to 15 dB improvement in AVO_OTA and three fold enhancement in fT_OTA over a conventional non-underlap design. OTA performance based on underlap single gate SOI MOSFETs realized in ultra-thin body (UTB) and ultra-thin body BOX (UTBB) technologies is also evaluated. AVO_OTA values exhibited by a DG MOSFET-based OTA are 1.3-1.6 times higher as compared to a conventional UTB/UTBB single gate OTA. fT_OTA values for DG OTA are 10 GHz higher for UTB OTAs whereas a twofold improvement is observed with respect to UTBB OTAs. The simultaneous improvement in AVO_OTA and fT_OTA highlights the usefulness of underlap channel architecture in improving gain-bandwidth trade-off in analog circuit design. Underlap channel OTAs demonstrate high degree of tolerance to misalignment/oversize between front and back gates without compromising the performance, thus relaxing crucial process/technology-dependent parameters to achieve 'idealized' DG MOSFETs. Results show that underlap OTAs designed with a spacer-to-straggle (s/σ) ratio of 3.2 and operated below a bias current (IBIAS) of 80 µA demonstrate optimum performance. The present work provides new opportunities for realizing future ultra-wide band OTA design with underlap DG MOSFETs.

  6. CMOS temperature sensor using a resistively degenerated common-source amplifier biased by an adjustable proportional-to-absolute-temperature voltage

    Science.gov (United States)

    Wang, Ruey-Lue; Fu, Chien-Cheng; Yu, Chi; Hao, Yi-Fan; Shi, Jian-Liang; Lin, Chen-Fu; Liao, Hsin-Hao; Tsai, Hann-Huei; Juang, Ying-Zong

    2014-01-01

    A high-linearity CMOS temperature sensor with pulse output is presented. The temperature core is a resistively degenerated common-source amplifier which gate is biased by a proportional-to-absolute-temperature (PTAT) voltage generator. The source resistor is made of polysilicon which resistance has a PTAT characteristic. The current flowing through the resistor exhibits a PTAT characteristic with high linearity of 99.99% at least for a temperature range from 0 to 125 °C. The PTAT voltage generator can be adjusted by a bias voltage Vb and hence the PTAT current can also be adjusted by the Vb. The PTAT current is mirrored to an added current controlled oscillator which output pulse frequencies also exhibit a PTAT characteristic. For the chip using the 0.35 µm process, the plots of measured pulse frequencies against temperature exhibit the sensitivity of 2.30 to 2.24 kHz/°C with linearity of more than 99.99% at the Vb of 1 to 1.2 V.

  7. Design Considerations for CMOS Current Mode Operational Amplifiers and Current Conveyors

    DEFF Research Database (Denmark)

    Bruun, Erik

    This dissertation is about CMOS current conveyors and current mode operational amplifiers (opamps). They are generic devices for continuous time signal processing in circuits and systems where signals are represented by currents.Substantial advancements are reported in the dissertation, both...... related to circuit implementations and system configurations and to an analysis of the fundamental limitations of the current mode technique.In the field of system configurations and circuit implementations different configurations of high gain current opamps are introduced and some of the first...... implementations of current mode opamps in CMOS technology are described. Also, current conveyor configurations with multiple outputs and flexible feedback connections from outputs to inputs are introduced. The dissertation includes several examples of circuit configurations ranging from simple class A and class...

  8. A 12-bit, 40-Ms/s pipelined ADC with an improved operational amplifier

    Science.gov (United States)

    Yu, Wang; Haigang, Yang; Tao, Yin; Fei, Liu

    2012-05-01

    This paper proposes a 12-bit, 40-Ms/s pipelined analog-to-digital converter (ADC) with an improved high-gain and wide-bandwidth operational amplifier (opamp). Based on the architecture of the proposed ADC, the non-ideal factors of opamps are first analyzed, which have the significant impact on the ADC's resolution. Then, the compensation techniques of the ADC's opamp are presented to restrain the negative effect introduced by the gain-boosting technique and switched-capacitor common-mode-feedback structure. After analysis and optimization, the ADC implemented in a 0.35 μm standard CMOS process shows a maximum signal-to-noise distortion ratio of 60.5 dB and a spurious-free dynamic range of 74.5 dB, respectively, at a 40 MHz sample clock with over 2 Vpp input range.

  9. A 12-bit, 40-Ms/s pipelined ADC with an improved operational amplifier

    Institute of Scientific and Technical Information of China (English)

    Wang Yu; Yang Haigang; Yin Tao; Liu Fei

    2012-01-01

    This paper proposes a 12-bit,40-Ms/s pipelined analog-to-digital converter (ADC) with an improved high-gain and wide-bandwidth operational amplifier (opamp).Based on the architecture of the proposed ADC,the non-ideal factors ofopamps are first analyzed,which have the significant impact on the ADC's resolution.Then,the compensation techniques of the ADC's opamp are presented to restrain the negative effect introduced by the gainboosting technique and switched-capacitor common-mode-feedback structure.After analysis and optimization,the ADC implemented in a 0.35 μm standard CMOS process shows a maximum signal-to-noise distortion ratio of 60.5 dB and a spurious-free dynamic range of 74.5 dB,respectively,at a 40 MHz sample clock with over 2 Vpp input range.

  10. Study and Performance Analysis of High Frequency and High Speed Operational Amplifier

    Directory of Open Access Journals (Sweden)

    Puneet Goyal

    2013-03-01

    Full Text Available The performance analysis of the two stage CMOS operational amplifiers employing Miller capacitor in conjunction with the common gate current buffer is presented. Unlike the previously reported design strategies of the opamp of this type, this results in the opamp with a lower power supply requirements, better phase margin and better speed. The Opamp is designed to exhibit a unity gain frequency of 1.46GHz and exhibits a gain of 115dB with a 117˚ phase margin. The slew rate is found as high as 50 V/µs. Power supply noise rejection is also better in case of current buffer compensation. As compared to the conventional approach, the current buffer compensation method results in a higher unity gain frequency hence higher bandwidth under the same load condition. Simulation has been carried out in LT-SPICE

  11. Quantum limited noise figure operation of high gain erbium doped fiber amplifiers

    DEFF Research Database (Denmark)

    Lumholt, Ole; Povlsen, Jørn Hedegaard; Schüsler, Kim;

    1993-01-01

    powers below -5 dBm, and an improvement of 2.0 dB with a simultaneous gain increase of 4.1 dB is measured relative to a gain-optimized fiber. The optimum isolator location is evaluated for different pump and signal wavelengths in both an Al/Er-doped and a Ge/Er-doped fiber, for pump and signal power......Performance improvements obtained by using an isolator as an amplified-spontaneous-emission-suppressing component within erbium-doped fibers are evaluated. Simultaneous high-gain and near-quantum-limited noise figures can be obtained by such a scheme. The noise figure improves for input signal...... variations and different pump configurations. In all cases the optimum isolator position lies within 10-37% of the total fiber length for small signal operation...

  12. Signal processing with a summing operational amplifier in multicomponent potentiometric titrations.

    Science.gov (United States)

    Parczewski, A

    1987-06-01

    It has been proved that application of two indicator electrodes connected to the ordinary titration apparatus through an auxiliary electronic device (a summing operational amplifier) significantly extends the scope of multicomponent potentiometric titrations in which the analytes are determined simultaneously from a single titration curve. For each analyte there is a corresponding potential jump on the titration curve. By application of the proposed auxiliary device, the sum of the electrode potentials is measured. The device also enables the relative sizes of the potential jumps at the end-points on the titration curve to be varied. The advantages of the proposed signal processing are exemplified by complexometric potentiometric titrations of Fe(III) and Cu(II) in mixtures, with a platinum electrode and a copper ion-selective electrode as the indicator electrodes.

  13. Capacitively-coupled chopper amplifiers

    CERN Document Server

    Fan, Qinwen; Huijsing, Johan H

    2017-01-01

    This book describes the concept and design of the capacitively-coupled chopper technique, which can be used in precision analog amplifiers. Readers will learn to design power-efficient amplifiers employing this technique, which can be powered by regular low supply voltage such as 2V and possibly having a +\\-100V input common-mode voltage input. The authors provide both basic design concepts and detailed design examples, which cover the area of both operational and instrumentation amplifiers for multiple applications, particularly in power management and biomedical circuit designs. Discusses basic working principles and details of implementation for proven designs; Includes a diverse set of applications, along with measurement results to demonstrate the effectiveness of the technique; Explains advantages and drawbacks of the technique, given particular circumstances.

  14. 16nm planar process CMOS SRAM cell design: Analysis of Operating Voltage and Temperature Effect

    Directory of Open Access Journals (Sweden)

    Rohit Sharma

    2013-09-01

    Full Text Available Purpose: CMOS devices are scaling down to nano ranges resulting in increased process variations and short channel effects which not only affect the reliability of the device but also performance expectations. The SRAM design uses the smallest transistors possible and is also susceptible to reliability issues and process variations, making it an ideal benchmark circuit to compare the two technologies [1]. Low power static-random access memories (SRAM have become a critical component in modern VLSI systems. They occupy a large portion of area and accounts for a major component of power consumption in today’s VLSI circuits. In this paper we intend to analyse the performance of a traditional 6T SRAM cell of 16nm Complementary Metal Oxide Semiconductor (CMOS technology with change in Operating Voltage and Temperature. Aim: The aim of the paper is to study the effect of the SNM dependencies on the operating voltage and temperatureApproach: Conventional 6T SRAM are designed using predictive technology model developed by Arizona State University [2] of 16nm planar Low Power CMOS and variation of SNM with operating voltage and temperature are simulated and studied using hspice.Findings: Variations in the operating voltages and temperature strongly impact the stability of an SRAM cell at 16nm. Comparative study is done for predictive 16nm based conventional 6T SRAM cell by varying operating voltage and temperature. A methodology to select operating voltage is suggested which can be used in an early stage of a design cycle to optimise stability margins in nanometer regime

  15. Efficient Low-Voltage Operation of a CW Gyrotron Oscillator at 233 GHz.

    Science.gov (United States)

    Hornstein, Melissa K; Bajaj, Vikram S; Griffin, Robert G; Temkin, Richard J

    2007-02-01

    The gyrotron oscillator is a source of high average power millimeter-wave through terahertz radiation. In this paper, we report low beam power and high-efficiency operation of a tunable gyrotron oscillator at 233 GHz. The low-voltage operating mode provides a path to further miniaturization of the gyrotron through reduction in the size of the electron gun, power supply, collector, and cooling system, which will benefit industrial and scientific applications requiring portability. Detailed studies of low-voltage operation in the TE(2) (,) (3) (,) (1) mode reveal that the mode can be excited with less than 7 W of beam power at 3.5 kV. During CW operation with 3.5-kV beam voltage and 50-mA beam current, the gyrotron generates 12 W of RF power at 233.2 GHz. The EGUN electron optics code describes the low-voltage operation of the electron gun. Using gun-operating parameters derived from EGUN simulations, we show that a linear theory adequately predicts the low experimental starting currents.

  16. Co-ordinated voltage control of DFIG wind turbines in uninterrupted operation during grid faults

    DEFF Research Database (Denmark)

    Hansen, Anca Daniela; Michalke, G.; Sørensen, Poul Ejnar

    2007-01-01

    is implemented in the power system simulation toolbox PowerFactory DIgSILENT. The DFIG wind farm ride-through capability and contribution to voltage control in the power system are assessed and discussed by means of simulations with the use of a transmission power system generic model developed and delivered......-side converter as long as it is not blocked by the protection system, otherwise the grid-side converter takes over the voltage control. Moreover, the article presents a DFIG wind farm model equipped with a grid fault protection system and the described co-ordinated voltage control. The whole DFIG wind farm model...... by the Danish Transmission System Operator Energinet.dk. The simulation results show how a DFIG wind farm equipped with voltage control can help a nearby active stall wind farm to ride through a grid fault, without implementation of any additional ride-through control strategy in the active stall wind farm....

  17. Threshold Voltage of MOSFET Devices Extracted by Normalized Mutual Integral Difference Operator

    Institute of Scientific and Technical Information of China (English)

    HEJin; ZHENGTaolei; ZHANGXing; WANGYangyuan

    2003-01-01

    The threshold voltage of MOSFETs to be extracted by a novel experimental method named the nor-realized mutual integral difference operator has been inves-tigated in this paper. The basic principle of this method is to use the extreme spectral characteristics of the nor-realized mutual integral difference result of the MOSFET transfer characteristics to find the threshold voltage. Ap-plication of this method has also been demonstrated nu-merically in extracting the threshold voltage of MOS de-vices with the different effective channel length and par-asitic series resistance. The results show this method is sensitive to the channel length variation while insensitive to the parasitic resistance component. The extracted re-sults on the threshold voltage of MOSFET devices have been compared with those obtained by the second deriva-tive method and the agreements have been found, showing the advantage of the method presented here.

  18. A Voltage Regulator for Parallel Operated Isolated Synchronous Generators Using Statcom

    Directory of Open Access Journals (Sweden)

    Sravanthi Gudipati,

    2014-02-01

    Full Text Available Reactive power (vars is required to maintain the voltage to deliver active power through transmission lines. Generator and other loads require reactive power to convert the flow of electrons into useful work. When there is not enough reactive power, the voltage sags down and it is not possible to push the power demanded by loads through the lines. Thus reactive power is injected using the compensating device STATCOM.The Paper deals on static synchronous compensator (STATCOM which is connected to the parallel operated isolated synchronous generators to drive a 3-phase load. These generators are driven by constant prime mover like diesel engine,bio-mass,gasoline,steam turbine etc.Three single phase IGBT based Voltage source converter (VSC along with 3-single phase transformers and self supported D.C bus is used as a voltage controller. The project deals with controlling a STATCOM using non-linear techniques that involves hysteresis current control and Park’s transformation. The voltage controller of parallel operated generators for feeding 3-phase loads driven by constant speed prime mover like Hydraulic turbine governor model helps in satisfactory operation under varying loads and in load balancing. If the line current is less than the expected, the compensating current generated by STATCOM is taken by loads.

  19. High temperature charge amplifier for geothermal applications

    Science.gov (United States)

    Lindblom, Scott C.; Maldonado, Frank J.; Henfling, Joseph A.

    2015-12-08

    An amplifier circuit in a multi-chip module includes a charge to voltage converter circuit, a voltage amplifier a low pass filter and a voltage to current converter. The charge to voltage converter receives a signal representing an electrical charge and generates a voltage signal proportional to the input signal. The voltage amplifier receives the voltage signal from the charge to voltage converter, then amplifies the voltage signal by the gain factor to output an amplified voltage signal. The lowpass filter passes low frequency components of the amplified voltage signal and attenuates frequency components greater than a cutoff frequency. The voltage to current converter receives the output signal of the lowpass filter and converts the output signal to a current output signal; wherein an amplifier circuit output is selectable between the output signal of the lowpass filter and the current output signal.

  20. A study on positive-feedback configuration of a bipolar SiC high temperature operational amplifier

    Science.gov (United States)

    Kargarrazi, Saleh; Lanni, Luigia; Zetterling, Carl-Mikael

    2016-02-01

    This paper reports on the design and implementation of an integrated operational amplifier in bipolar SiC, and elaborates on its operation in positive-feedback configuration.The opamp is studied in different feedback setups: closed-loop compensated amplifier, comparator with hysteresis (Schmitt trigger), and as a relaxation oscillator. Measurement results suggest a stable closed-loop opamp with ∼40 dB gain, a Schmitt trigger with constant threshold levels over a wide temperature range, and a relaxation oscillator tested up to 540 kHz. All the setups were tested from 25 °C up to 500 °C.

  1. High voltage threshold for stable operation in a dc electron gun

    Science.gov (United States)

    Yamamoto, Masahiro; Nishimori, Nobuyuki

    2016-07-01

    We report clear observation of a high voltage (HV) threshold for stable operation in a dc electron gun. The HV hold-off time without any discharge is longer than many hours for operation below the threshold, while it is roughly 10 min above the threshold. The HV threshold corresponds to the minimum voltage where discharge ceases. The threshold increases with the number of discharges during HV conditioning of the gun. Above the threshold, the amount of gas desorption per discharge increases linearly with the voltage difference from the threshold. The present experimental observations can be explained by an avalanche discharge model based on the interplay between electron stimulated desorption (ESD) from the anode surface and subsequent secondary electron emission from the cathode by the impact of ionic components of the ESD molecules or atoms.

  2. 0.5 µW Sub-Threshold Operational Transconductance Amplifiers Using 0.15 µm Fully Depleted Silicon-on-Insulator (FDSOI Process

    Directory of Open Access Journals (Sweden)

    Piotr Olejarz

    2012-05-01

    Full Text Available We present a low voltage, low power operational transconductance amplifier (OTA designed using a Fully Depleted Silicon-on-Insulator (FDSOI process. For very low voltage application down to 0.5 V, two-stage miller-compensated OTAs with both p-channel MOSFET (PMOS and n-channel MOSFET (NMOS differential input have been investigated in a FDSOI complementary metal oxide semiconductor (CMOS 150 nm process, using 0.5 V threshold transistors. Both differential input OTAs have been designed to operate from the standard 1.5 V down to 0.5 V with appropriate trade-offs in gain and bandwidth. The NMOS input OTA has a simulated gain/3 dB-bandwidth/power metric of 9.6 dB/39.6 KHz/0.48 µW at 0.6 V and 46.6 dB/45.01 KHz/10.8 µW at 1.5 V. The PMOS input OTA has a simulated metric of 19.7 dB/18.3 KHz/0.42 µW at 0.4 V and 53 dB/1.4 KHz/1.6 µW at 1.5 V with a bias current of 125 nA. The fabricated OTAs have been tested and verified with unity-gain configuration down to a 0.5 V supply voltage. Comparison with bulk process, namely the IBM 180 nm node is provided and with relevant discussion on the use of FDSOI process for low voltage analog design.

  3. Design and analysis of various multifunctional operations at ultrahigh speed by using a semiconductor optical amplifier-Mach-Zehnder interferometer

    Science.gov (United States)

    Lovkesh; Marwaha, Anupma

    2016-03-01

    Various multifunctional operations are performed by proposing designs of optical adder, subtractor, comparator, and decoder at 60 Gb/s. In all operations, constructive interference is produced by choosing optimized parameters, i.e., optical pulse generator power, input power, semiconductor optical amplifier-Mach-Zehnder interferometer parameters, and so on, for delivering a true output signal. An optical pulse-generated signal is required for all operations except addition, subtraction and equal to in a comparator.

  4. Realization of OFCC based Transimpedance Mode Instrumentation Amplifier

    Directory of Open Access Journals (Sweden)

    Neeta Pandey

    2016-01-01

    Full Text Available The paper presents an instrumentation amplifier suitable for amplifying the current source transducer signals. It provides a voltage output. It has a high gain, common mode rejection ratio and gain independent bandwidth. It uses three Operational Floating Current Conveyors (OFCCs and four resistors. The effect of nonidealities of OFCC on performance of proposed transimpedance instrumentation amplifier (TIA is also analyzed. The proposal has been verified through SPICE simulations using CMOS based schematicThe paper presents an instrumentation amplifier suitable for amplifying the current source transducer signals. It provides a voltage output. It has a high gain, common mode rejection ratio and gain independent bandwidth. It uses three operational floating current conveyors (OFCCs and four resistors. The effect of nonidealities of OFCC on performance of proposed transimpedance instrumentation amplifier (TIA is also analyzed. The proposal has been verified through SPICE simulations using CMOS based schematic.

  5. Operation of grid-connected DFIG under unbalanced grid voltage condition

    NARCIS (Netherlands)

    Zhou, Y.; Bauer, P.; Ferreira, J.A.; Pierik, J.

    2009-01-01

    Doubly fed induction generator (DFIG) still shares a large part in today's wind power market. It provides the benefits of variable speed operation cost-effectively, and can control its active and reactive power independently. Crowbar protection is often adopted to protect the rotor-side voltage sour

  6. Voltage Harmonic Compensation of a Microgrid Operating in Islanded and Grid-Connected Modes

    DEFF Research Database (Denmark)

    Savaghebi, Mehdi; Jalilian, Alireza; Vasquez, Juan C.

    2011-01-01

    In this paper, a method for voltage harmonic compensation in a microgrid operating in islanded and gridconnected modes is presented. Harmonic compensation is done through proper control of distributed generators (DGs) interface converters. In order to achieve proper sharing of the compensation...

  7. Method for reducing fuel cell output voltage to permit low power operation

    Science.gov (United States)

    Reiser, Carl A.; Landau, Michael B.

    1980-01-01

    Fuel cell performance is degraded by recycling a portion of the cathode exhaust through the cells and, if necessary, also reducing the total air flow to the cells for the purpose of permitting operation below a power level which would otherwise result in excessive voltage.

  8. Monitoring operating temperature and supply voltage in achieving high system dependability

    NARCIS (Netherlands)

    Khan, M.A.; Kerkhoff, Hans G.

    2013-01-01

    System dependability being a set of number of attributes, of which the important reliability, heavily depends on operating temperature and supply voltage. Any change beyond the designed specifications may change the system performance and could result in system reliability and hence dependability

  9. Monitoring operating temperature and supply voltage in achieving high system dependability

    NARCIS (Netherlands)

    Khan, M.A.; Kerkhoff, Hans G.

    2013-01-01

    System dependability being a set of number of attributes, of which the important reliability, heavily depends on operating temperature and supply voltage. Any change beyond the designed specifications may change the system performance and could result in system reliability and hence dependability pr

  10. Monitoring operating temperature and supply voltage in achieving high system dependability

    NARCIS (Netherlands)

    Khan, Muhammad Aamir; Kerkhoff, Hans G.

    2013-01-01

    System dependability being a set of number of attributes, of which the important reliability, heavily depends on operating temperature and supply voltage. Any change beyond the designed specifications may change the system performance and could result in system reliability and hence dependability pr

  11. Real time diagnostic for operation at a CW low voltage FEL

    Energy Technology Data Exchange (ETDEWEB)

    Balfour, C.; Shaw, A.; Mayhew, S.E. [and others

    1995-12-31

    At Liverpool University, a system for single user control of an FEL has been designed to satisfy the low voltage FEL (ie 200kV) operational requirements. This system incorporates many aspects of computer automation for beam diagnostics, radiation detection and vacuum system management. In this paper the results of the development of safety critical control systems critical control systems are reported.

  12. On the operation of switch-less transversely excited atmosphere CO2 lasers in the oscillator and amplifier configurations

    Indian Academy of Sciences (India)

    Gautam C Patil; Pallavi Raote; J Padma Nilaya; D J Biswas

    2010-11-01

    The work presented in this paper deals with the triggering aspect of a switch-less laser. Many methods were utilized to affect the operation of two switch-less lasers in the oscillator–amplifier configuration. Most satisfactory performance in terms of the range and reliability of the delay was obtained with the LC inversion-based triggering option.

  13. Comparison of an Analog Behavioral and Transistor Level Model of Operational Amplifier

    Directory of Open Access Journals (Sweden)

    Viktor Smiesko

    2008-01-01

    Full Text Available In the present time of the electronics development lot of the measure equipments are standing in a very close neighborhood of each other. The surrounding of them is then full of various signals of various frequencies and shapes. The electromagnetic influence of these equipments is important for their functionality and performance. The high frequency disturbance with the frequency of 1 MHz and more influence of course also the performance of the operational amplifiers. Lot of such circuit swith the lower power consumption are also sensitive to the very small disturbances. This paper is our contribution to the creating of an Analog Behavioral Model (ABM of the OPAMP, which is one of thevery power ful tool and can be used for the SPICE simulations. Some results of the simulations with our proposed model were compared with the measured results as well as with the SPICE simulations on the transistor level. The results showed the good agreement between the modeled and measured values.

  14. Optimal Constant DC Link Voltage Operation of aWave Energy Converter

    Directory of Open Access Journals (Sweden)

    Mats Leijon

    2013-04-01

    Full Text Available This article proposes a simple and reliable damping strategy for wave powerfarm operation of small-scale point-absorber converters. The strategy is based on passiverectification onto a constant DC-link, making it very suitable for grid integration of the farm.A complete model of the system has been developed in Matlab Simulink, and uses real sitedata as input. The optimal constant DC-voltage is evaluated as a function of the significantwave height and energy period of the waves. The total energy output of the WEC is derivedfor one year of experimental site data. The energy output is compared for two cases, onewhere the optimal DC-voltage is determined and held constant at half-hour basis throughoutthe year, and one where a selected value of the DC-voltage is kept constant throughout theyear regardless of sea state.

  15. False Operation of Static Random Access Memory Cells under Alternating Current Power Supply Voltage Variation

    Science.gov (United States)

    Sawada, Takuya; Takata, Hidehiro; Nii, Koji; Nagata, Makoto

    2013-04-01

    Static random access memory (SRAM) cores exhibit susceptibility against power supply voltage variation. False operation is investigated among SRAM cells under sinusoidal voltage variation on power lines introduced by direct RF power injection. A standard SRAM core of 16 kbyte in a 90 nm 1.5 V technology is diagnosed with built-in self test and on-die noise monitor techniques. The sensitivity of bit error rate is shown to be high against the frequency of injected voltage variation, while it is not greatly influenced by the difference in frequency and phase against SRAM clocking. It is also observed that the distribution of false bits is substantially random in a cell array.

  16. Optimizing the CEBAF Injector for Beam Operation with a Higher Voltage Electron Gun

    CERN Document Server

    Hannon, F E; Kazimi, R

    2011-01-01

    Recent developments in the DC gun technology used at CEBAF have allowed an increase in operational voltage from 100kV to 130kV. In the near future this will be extended further to 200kV with the purchase of a new power supply. The injector components and layout at this time have been designed specifically for 100kV operation. It is anticipated that with an increase in gun voltage and optimization of the layout and components for 200kV operation, that the electron bunch length and beam brightness can be improved upon. This paper explores some upgrade possibilities for a 200kV gun CEBAF injector through beam dynamic simulations.

  17. Monolithic blue LED series arrays for high-voltage AC operation

    Energy Technology Data Exchange (ETDEWEB)

    Ao, Jin-Ping [Satellite Venture Business Laboratory, University of Tokushima, Tokushima 770-8506 (Japan); Sato, Hisao; Mizobuchi, Takashi; Morioka, Kenji; Kawano, Shunsuke; Muramoto, Yoshihiko; Sato, Daisuke; Sakai, Shiro [Nitride Semiconductor Co. Ltd., Naruto, Tokushima 771-0360 (Japan); Lee, Young-Bae; Ohno, Yasuo [Department of Electrical and Electronic Engineering, University of Tokushima, Tokushima 770-8506 (Japan)

    2002-12-16

    Design and fabrication of monolithic blue LED series arrays that can be operated under high ac voltage are described. Several LEDs, such as 3, 7, and 20, are connected in series and in parallel to meet ac operation. The chip size of a single device is 150 {mu}m x 120 {mu}m and the total size is 1.1 mm x 1 mm for a 40(20+20) LED array. Deep dry etching was performed as device isolation. Two-layer interconnection and air bridge are utilized to connect the devices in an array. The monolithic series array exhibit the expected operation function under dc and ac bias. The output power and forward voltage are almost proportional to LED numbers connected in series. On-wafer measurement shows that the output power is 40 mW for 40(20+20) LED array under ac 72 V. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  18. The design, construction, and operation of long-distance high-voltage electricity transmission technologies.

    Energy Technology Data Exchange (ETDEWEB)

    Molburg, J. C.; Kavicky, J. A.; Picel, K. C.

    2008-03-03

    This report focuses on transmission lines, which operate at voltages of 115 kV and higher. Currently, the highest voltage lines comprising the North American power grid are at 765 kV. The grid is the network of transmission lines that interconnect most large power plants on the North American continent. One transmission line at this high voltage was built near Chicago as part of the interconnection for three large nuclear power plants southwest of the city. Lines at this voltage also serve markets in New York and New England, also very high demand regions. The large power transfers along the West Coast are generally at 230 or 500 kV. Just as there are practical limits to centralization of power production, there are practical limits to increasing line voltage. As voltage increases, the height of the supporting towers, the size of the insulators, the distance between conductors on a tower, and even the width of the right-of-way (ROW) required increase. These design features safely isolate the electric power, which has an increasing tendency to arc to ground as the voltage (or electrical potential) increases. In addition, very high voltages (345 kV and above) are subject to corona losses. These losses are a result of ionization of the atmosphere, and can amount to several megawatts of wasted power. Furthermore, they are a local nuisance to radio transmission and can produce a noticeable hum. Centralized power production has advantages of economies of scale and special resource availability (for instance, hydro resources), but centralized power requires long-distance transfers of power both to reach customers and to provide interconnections for reliability. Long distances are most economically served at high voltages, which require large-scale equipment and impose a substantial footprint on the corridors through which power passes. The most visible components of the transmission system are the conductors that provide paths for the power and the towers that keep these

  19. Low-noise RF-amplifier-free slab-coupled optical waveguide coupled optoelectronic oscillators: physics and operation.

    Science.gov (United States)

    Loh, William; Yegnanarayanan, Siva; Plant, Jason J; O'Donnell, Frederick J; Grein, Matthew E; Klamkin, Jonathan; Duff, Shannon M; Juodawlkis, Paul W

    2012-08-13

    We demonstrate a 10-GHz RF-amplifier-free slab-coupled optical waveguide coupled optoelectronic oscillator (SCOW-COEO) system operating with low phase-noise (70 dB measurement-limited). The optical pulses generated by the SCOW-COEO exhibit 26.8-ps pulse width (post compression) with a corresponding spectral bandwidth of 0.25 nm (1.8X transform-limited). We also investigate the mechanisms that limit the performance of the COEO. Our measurements indicate that degradation in the quality factor (Q) of the optical cavity significantly impacts COEO phase-noise through increases in the optical amplifier relative intensity noise (RIN).

  20. Power lateral pnp transistor operating with high current density in irradiated voltage regulator

    Directory of Open Access Journals (Sweden)

    Vukić Vladimir Đ.

    2013-01-01

    Full Text Available The operation of power lateral pnp transistors in gamma radiation field was examined by detection of the minimum dropout voltage on heavily loaded low-dropout voltage regulators LM2940CT5, clearly demonstrating their low radiation hardness, with unacceptably low values of output voltage and collector-emitter voltage volatility. In conjunction with previous results on base current and forward emitter current gain of serial transistors, it was possible to determine the positive influence of high load current on a slight improvement of voltage regulator LM2940CT5 radiation hardness. The high-current flow through the wide emitter aluminum contact of the serial transistor above the isolation oxide caused intensive annealing of the positive oxide-trapped charge, leading to decrease of the lateral pnp transistor's current gain, but also a more intensive recovery of the small-signal npn transistors in the control circuit. The high current density in the base area of the lateral pnp transistor immediately below the isolation oxide decreased the concentration of negative interface traps. Consequently, the positive influence of the reduced concentration of the oxide-trapped charge on the negative feedback reaction circuit, together with the favourable effect of reduced interface traps concentration, exceeded negative influence of the annealed oxide-trapped charge on the serial pnp transistor's forward emitter current gain.

  1. ELABORATION OF HIGH-VOLTAGE PULSE INSTALLATIONS AND PROVIDING THEIR OPERATION PROTECTIVE MEASURES

    Directory of Open Access Journals (Sweden)

    А. М. Hashimov

    2016-01-01

    Full Text Available The article presents design engineering methods for the high-voltage pulse installations of technological purpose for disinfection of drinking water, sewage, and edible liquids by high field micro- and nanosecond pulsing exposure. Designing potentialities are considered of the principal elements of the high-voltage part and the discharge circuit of the installations towards assuring the best efficient on-load utilization of the source energy and safe operation of the high-voltage equipment. The study shows that for disinfection of drinking water and sewage it is expedient to apply microsecond pulse actions causing the electrohydraulic effect in aqueous media with associated complex of physical processes (ultraviolet emission, generation of ozone and atomic oxygen, mechanical compression waves, etc. having detrimental effect on life activity of the microorganisms. In case of disinfecting edible liquids it is recommended to use the nanosecond pulses capable of straight permeating the biological cell nucleus, inactivating it. Meanwhile, the nutritive and biological values of the foodstuffs are saved and their organoleptic properties are improved. It is noted that in elaboration process of high-frequency pulse installations special consideration should be given to issues of the operating personnel safety discipline and securing conditions for the entire installation uninterrupted performance. With this objective in view the necessary requirements should be fulfilled on shielding the high- and low-voltage installation parts against high-frequency electromagnetic emissions registered by special differential sensors. Simultaneously, the abatement measures should be applied on the high-voltage equipment operational noise level. The authors offer a technique for noise abatement to admissible levels (lower than 80 dB A by means of coating the inside surface with shielded enclosure of densely-packed abutting sheets of porous electro-acoustic insulating

  2. Specifics of operation of a cold-cathode thyratron with a backward voltage half-wave

    Science.gov (United States)

    Korolev, Yu. D.; Landl, N. V.; Geiman, V. G.; Frants, O. B.; Bolotov, A. V.; Nekhoroshev, V. O.; Kasyanov, V. S.

    2017-05-01

    The specifics of operating a metal-ceramic TPI1-10k/50 thyratron in electric circuits with capacitance, inductance, and active resistance have been examined under circuit parameters that establish oscillatory current. Experiments have been performed at an anode voltage as high as 30 kV, a forward current of up to 7.6 kA, and a length of the first current half-period that varies from 0.38 to 1.9 μs. The data on operating modes in which this thyratron may handle a backward current wave and when current interruption is observed in the second half-period have been obtained. It has been demonstrated that a certain current flows through the thyratron in the backward direction during the interruption process. The amplitude of this current and the maximum backward voltage at the thyratron define whether the current is interrupted or repeat back-voltage device breakdown occurs. If the maximum backward current is on the level of several hundred amperes, complete current interruption occurs at backward voltages of up to 12 kV. The physical mechanisms of current interruption have been discussed.

  3. ASPECTS OF SURGE ARRESTERS’ MAXIMUM OPERATING VOLTAGE CHOICE FOR ELECTRICAL EQUIPMENT INSULATION PROTECTION IN 6-35 KV MAINS

    Directory of Open Access Journals (Sweden)

    Yu. N. Shumilov

    2013-09-01

    Full Text Available The paper shows that, in 6-35 kV mains, application of a non-linear surge arrester (SA with the maximum continuous admissible operating voltage which is 10% higher than the mains’ maximum operating voltage results in the SA protection from overheating and subsequent breakdown at nonnormable lifetime of single-phase arc faults.

  4. Time-reversal duality of high-efficiency RF power amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Reveyrand, T; Ramos, I; Popovic, Z

    2012-12-06

    The similarity between RF power amplifiers and rectifiers is discussed. It is shown that the same high-efficiency harmonically-terminated power amplifier can be operated in a dual rectifier mode. Nonlinear simulations with a GaN HEMT transistor model show the time-reversal intrinsic voltage and current waveform relationship between a class-F amplifier and rectifier. Measurements on a class-F-1 amplifier and rectifier at 2.14 GHz demonstrate over 80% efficiency in both cases.

  5. SF sub 6 quenched gas mixtures for streamer mode operation of RPCs at very low voltages

    CERN Document Server

    Aielli, G; Cardarelli, R; Di Ciaccio, A; Di Stante, L; Liberti, B; Paoloni, A; Pastori, E; Santonico, R

    2002-01-01

    In the present paper we describe a search for gases that allow to reduce the energy of the electrical discharge produced in Resistive Plate Chambers (RPCs) operated in streamer mode, by reducing both the operating voltage and the released charge. This can be achieved, with current gas mixtures of argon, tetrafluoroethane (TFE) and isobutane, by reducing the total amount of quenching components (TFE+isobutane) down to 10-15% and compensating for the lower gas quenching power with the addition of small amounts of SF sub 6. We show here that SF sub 6 , even for concentrations as low as 1% or less, has a strong effect in reducing the delivered charge in low quenched gases and allows to achieve a proper working mode of the RPC even at voltages as low as 4-5 kV over a 2 mm gas gap.

  6. New half-voltage and double phase operation of the Hermes III linear induction accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Mikkelson, K.A.; Westfall, R.L.; Harper-Slaboszewicz, V.J. (Sandia National Labs., Albuquerque, NM (United States)); Neely, S.M. (K-Tech Corp., Albuquerque, NM (United States))

    1991-01-01

    The standard operating mode produces bremsstrahlung with an endpoint energy of about 18 MeV. This paper describes a new mode with a 8.5 MeV endpoint energy and the same standard mode pulse characteristics achieved by operating only half of the accelerator at full charge with the advantage of minimal setup time. An extension of the new half-voltage mode is to use the other half of the accelerator for delivering a second pulse at a later time with the same technique. The double pulse mode is ideal for beam generation which requires a long interpulse time in the millisecond regime. The beam characteristics of the two half-voltage pulses are nearly identical with the nominal radiation pulse full width at half maximum of 21 ns and 10--90 risetime of 11 ns recorded by the same Compton diode radiation monitors on instruments triggered 30 ms apart.

  7. A semi-floating gate transistor for low-voltage ultrafast memory and sensing operation.

    Science.gov (United States)

    Wang, Peng-Fei; Lin, Xi; Liu, Lei; Sun, Qing-Qing; Zhou, Peng; Liu, Xiao-Yong; Liu, Wei; Gong, Yi; Zhang, David Wei

    2013-08-09

    As the semiconductor devices of integrated circuits approach the physical limitations of scaling, alternative transistor and memory designs are needed to achieve improvements in speed, density, and power consumption. We report on a transistor that uses an embedded tunneling field-effect transistor for charging and discharging the semi-floating gate. This transistor operates at low voltages (≤2.0 volts), with a large threshold voltage window of 3.1 volts, and can achieve ultra-high-speed writing operations (on time scales of ~1 nanosecond). A linear dependence of drain current on light intensity was observed when the transistor was exposed to light, so possible applications include image sensing with high density and performance.

  8. Design, simulation and comparative analysis of CNT based cascode operational transconductance amplifiers

    Science.gov (United States)

    Nizamuddin, M.; Loan, Sajad A.; Alamoud, Abdul R.; Abbassi, Shuja A.

    2015-10-01

    In this work, design and calibrated simulation of carbon nanotube field effect transistor (CNTFET)-based cascode operational transconductance amplifiers (COTA) have been performed. Three structures of CNTFET-based COTAs have been designed using HSPICE and have been compared with the conventional CMOS-based COTAs. The proposed COTAs include one using pure CNTFETs and two others that employ CNTFETs, as well as the conventional MOSFETs. The simulation study has revealed that the CNTFET-based COTAs have significantly outperformed the conventional MOSFET-based COTAs. A significant increase in dc gain, output resistance and slew rate of 81.4%, 25% and 13.2%, respectively, have been achieved in the proposed pure CNT-based COTA in comparison to the conventional CMOS-based COTA. The power consumption in the pure CNT-COTA is 324 times less in comparison to the conventional CMOS-COTA. Further, the phase margin (PM), gain margin (GM), common mode and power supply rejection ratios have been significantly increased in the proposed CNT-based COTAs in comparison to the conventional CMOS-based COTAs. Furthermore, to see the advantage of cascoding, the proposed CNT-based cascode OTAs have been compared with the CNT-based OTAs. It has been observed that by incorporating the concept of cascode in the CNTFET-based OTAs, significant increases in gain (12.5%) and output resistance (13.07%) have been achieved. The performance of the proposed COTAs has been further observed by changing the number of CNTs (N), CNT pitch (S) and CNT diameter (DCNT) in the CNTFETs used. It has been observed that the performance of the proposed COTAs can be significantly improved by using optimum values of N, S and DCNT.

  9. Cell libraries for robust low-voltage operation in nanometer technologies

    Science.gov (United States)

    Gemmeke, Tobias; Ashouei, Maryam; Liu, Bo; Meixner, Michael; Noll, Tobias G.; de Groot, Harmke

    2013-06-01

    The key challenge of wireless sensor nodes is their total power dissipation, hampering their autonomous operation due to limited battery life time. Aggressive voltage scaling reduces both dynamic and leakage power, prolonging the battery life time. The challenges of aggressive voltage scaling into the subthreshold region includes the pronounced effect of process variability and the significantly reduced performance. In this paper, these challenges are addressed by first devising a novel cell library pruning methodology to ensure reliable voltage scaling based on the noise margin criterion. Using the proposed approach, further voltage scaling is possible, enabling more than 20% energy savings as compared to the classic approach of avoiding high fan-in cells and/or complex gates. Then, the design of standard cells for two dedicated design points is presented which considers both the transistor geometry (L, W, and the number of fingers) as well as the cell layout to achieve up to a 3× speed-up as compared to a conventional methodology. The result is also validated in measurement leading to the comparison of a datapath module of slightly better energy efficiency and 3× better performance.

  10. Separate-type scanner and wideband high-voltage amplifier for atomic-resolution and high-speed atomic force microscopy.

    Science.gov (United States)

    Miyata, Kazuki; Usho, Satoshi; Yamada, Satoshi; Furuya, Shoji; Yoshida, Kiyonori; Asakawa, Hitoshi; Fukuma, Takeshi

    2013-04-01

    We have developed a liquid-environment atomic force microscope with a wideband and low-noise scanning system for atomic-scale imaging of dynamic processes at solid/liquid interfaces. The developed scanning system consists of a separate-type scanner and a wideband high-voltage amplifier (HVA). By separating an XY-sample scanner from a Z-tip scanner, we have enabled to use a relatively large sample without compromising the high resonance frequency. We compared various cantilever- and sample-holding mechanisms by experiments and finite element analyses for optimizing the balance between the usability and frequency response characteristics. We specifically designed the HVA to drive the developed scanners, which enabled to achieve the positioning accuracy of 5.7 and 0.53 pm in the XY and Z axes, respectively. Such an excellent noise performance allowed us to perform atomic-resolution imaging of mica and calcite in liquid. Furthermore, we demonstrate in situ and atomic-resolution imaging of the calcite crystal growth process in water.

  11. Generation of equivalent forms of operational trans-conductance amplifier-RC sinusoidal oscillators: the nullor approach

    OpenAIRE

    Raj Senani; Manish Gupta; Data Ram Bhaskar; Abdhesh Kumar Singh

    2014-01-01

    It has been shown in two earlier papers published from this study that corresponding to a given single-operational trans-conductance amplifier (single-OTA)-RC and dual-OTA-RC sinusoidal oscillators, there are three other structurally distinct equivalent forms having the same characteristic equation, one of which employs both grounded capacitors (GC). In this study, an earlier nullor-based theory of generating equivalent op-amp oscillator circuits, proposed by the first author, is extended to ...

  12. Analysis of bi-directional piezoelectric-based converters for zero-voltage switching operation

    DEFF Research Database (Denmark)

    Ekhtiari, Marzieh; Zhang, Zhe; Andersen, Michael A. E.

    2016-01-01

    This paper deals with a thorough analysis of zerovoltage switching especially for bi-directional, inductorless, piezoelectric transformer-based switch-mode power supplies with a half-bridge topology. Practically, obtaining zero-voltage switching for all of the switches in a bi......-directional piezoelectric power converter is a difficult task. However, the analysis in this work will be convenient for overcoming this challenge. The analysis defines the zero-voltage region indicating the operating points whether or not soft switching can be met over the switching frequency and load range. For the first...... time, a comprehensive analysis is provided, which can be used as a design guideline for applying control techniques in order to drive switches in piezoelectric transformer-based converters. This study further conveys the proposed method to the region where all the switches can obtain soft switching...

  13. Optoisolators simplify amplifier design

    Science.gov (United States)

    Ting, Joseph Wee

    2007-09-01

    Simplicity and low parts count are key virtues to this high voltage amplifier. Optoisolators replace complex high voltage transistor biasing schemes. This amplifier employs only 2 optoisolators, 16 high voltage mosfets transistors, 2 low voltage ones, 6 linear IC's and a score of passive components. Yet it can amplify opamp signals to 5 kV peak-to-peak from DC to sine waves up to 20 kHz. Resistor feedback guarantees the fidelity of the signal. It can source and sink 10 mA of output current. This amplifier was conceived to power ion traps for biological whole cell mass measurements. It is a versatile tool for a variety of applications.

  14. Distributed Low Voltage Ride-Through Operation of Power Converters in Grid-Connected Microgrids under Voltage Sags

    DEFF Research Database (Denmark)

    Zhao, Xin; Meng, Lexuan; Dragicevic, Tomislav;

    2015-01-01

    the voltage in all phases at AC common bus. However, since the line admittances from each converter to point of common coupling (PCC) are not identical, the injected reactive power may not be equally shared. In order to achieve low voltage ride through (LVRT) capability along with a good power sharing...... accuracy, a hierarchical control strategy is proposed in this paper. Droop control and virtual impedance is applied in primary control loop while secondary control loop is based on dynamic consensus algorithm (DCA). Experiments are conducted to verify the effectiveness of the proposed control strategy....

  15. 67 cm long bismuth-based erbium doped fiber amplifier with wideband operation

    Science.gov (United States)

    Cheng, X. S.; Hamida, B. A.; Naji, A. W.; Ahmad, H.; Harun, S. W.

    2011-11-01

    In this paper, we demonstrate a wideband Bismuth-based erbium doped fiber amplifier (Bi-EDFA) using two pieces of bismuth-based erbium-doped fiber (Bi-EDF) with a total length of 67 cm as gain media in a double pass parallel configuration. Both Bi-EDFs have an erbium ion concentration of 6300 ppm. Compared to conventional silica-based erbium-doped fiber amplifier (Si-EDFA) with the same amount of erbium ions, the Bi-EDFA provides a higher attainable gain as well as a greater amplification bandwidth, which ranging from 1525 to 1620 nm. The proposed Bi-EDFA achieved a wideband gain of around 18 dB within the wavelength region from 1530 to 1565 nm. The noise figures are maintained below 10 dB within a wide wavelength region from 1535 nm to 1620 nm.

  16. Modeling and Optimal Operation of Distributed Battery Storage in Low Voltage Grids

    OpenAIRE

    Fortenbacher, Philipp; Mathieu, Johanna L.; Andersson, Göran

    2016-01-01

    Due to high power in-feed from photovoltaics, it can be expected that more battery systems will be installed in the distribution grid in near future to mitigate voltage violations and thermal line and transformer overloading. In this paper, we present a two-stage centralized model predictive control scheme for distributed battery storage that consists of a scheduling entity and a real-time control entity. To guarantee secure grid operation, we solve a robust multi-period optimal power flow (O...

  17. Performance, stability and operation voltage optimization of screen-printed aqueous supercapacitors

    Science.gov (United States)

    Lehtimäki, Suvi; Railanmaa, Anna; Keskinen, Jari; Kujala, Manu; Tuukkanen, Sampo; Lupo, Donald

    2017-01-01

    Harvesting micropower energy from the ambient environment requires an intermediate energy storage, for which printed aqueous supercapacitors are well suited due to their low cost and environmental friendliness. In this work, a systematic study of a large set of devices is used to investigate the effect of process variability and operating voltage on the performance and stability of screen printed aqueous supercapacitors. The current collectors and active layers are printed with graphite and activated carbon inks, respectively, and aqueous NaCl used as the electrolyte. The devices are characterized through galvanostatic discharge measurements for quantitative determination of capacitance and equivalent series resistance (ESR), as well as impedance spectroscopy for a detailed study of the factors contributing to ESR. The capacitances are 200–360 mF and the ESRs 7.9–12.7 Ω, depending on the layer thicknesses. The ESR is found to be dominated by the resistance of the graphite current collectors and is compatible with applications in low-power distributed electronics. The effects of different operating voltages on the capacitance, leakage and aging rate of the supercapacitors are tested, and 1.0 V found to be the optimal choice for using the devices in energy harvesting applications. PMID:28382962

  18. Analysis of doubly-fed induction machine operating at motoring mode subjected to voltage sag

    Directory of Open Access Journals (Sweden)

    Navneet Kumar

    2016-09-01

    Full Text Available Variable Speed (VS Pumped Storage Plants (PSP equipped with large asynchronous (Doubly-Fed Induction machines are emerging now in hydropower applications. Motoring mode of operation of Doubly-Fed Induction Machine (DFIM is essential and techno-economical in this application due to: (1 its uniqueness in active power controllability, (2 bulk power handing capability with less rated power converters in rotor circuit, and (3 integrating Renewable Energy Sources (RES. This paper investigates the performance of two DFIMs at different power ratings (2.2 kW and 2 MW under voltage sag with different attribute. The test results are analyzed in terms of the peaks in torque, speed, power taken and transient currents in rotor and stator circuits. During sag, stable region for DFIM operation along with speed and stator side reactive power input control is also illustrated. The negative effects of voltage sag are briefly discussed. MATLAB simulation is validated with experimentation. The various observations during simulation and experimental analysis are also supported by the theoretical explanations.

  19. Transient Voltage Recorder

    Science.gov (United States)

    Medelius, Pedro J. (Inventor); Simpson, Howard J. (Inventor)

    2002-01-01

    A voltage transient recorder can detect lightning induced transient voltages. The recorder detects a lightning induced transient voltage and adjusts input amplifiers to accurately record transient voltage magnitudes. The recorder stores voltage data from numerous monitored channels, or devices. The data is time stamped and can be output in real time, or stored for later retrieval. The transient recorder, in one embodiment, includes an analog-to-digital converter and a voltage threshold detector. When an input voltage exceeds a pre-determined voltage threshold, the recorder stores the incoming voltage magnitude and time of arrival. The recorder also determines if its input amplifier circuits clip the incoming signal or if the incoming signal is too low. If the input data is clipped or too low, the recorder adjusts the gain of the amplifier circuits to accurately acquire subsequent components of the lightning induced transients.

  20. High-density magnetoresistive random access memory operating at ultralow voltage at room temperature.

    Science.gov (United States)

    Hu, Jia-Mian; Li, Zheng; Chen, Long-Qing; Nan, Ce-Wen

    2011-11-22

    The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch(-2), ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns.

  1. Hardware and software system for monitoring oil pump operation in power high-voltage transformers

    Directory of Open Access Journals (Sweden)

    Михайло Дмитрович Дяченко

    2017-07-01

    Full Text Available The article considers the basic prerequisites for the creation of an automated monitoring system for oil pumps of high-voltage transformers. This is due to the fact that the long operation of oil pumps results in deterioration and destruction of bearings, rubbing of the rotor, breakage and damage to the impeller, leakage, etc., which inevitably causes a significant decrease in the insulating properties of the transformer oil and leads to expenditures for its further recovery. False triggerings of gas protection sometimes occur. Continuous operation of the electric motor also requires additional equipment to protect the motor itself from various emergency situations, such as a short in the stator winding, a housing breakdown, an incomplete phase mode, etc. The use of stationary systems provides: diagnosing defects at an early stage of their development, increasing the reliability and longevity of the equipment components, increasing the overhaul period, decreasing the number of emergency stops, and adjusting the schedule of preventative maintenance. The basic principles of identification of the damaged part of the oil pump are given, the hardware and algorithmic solutions are considered in the work. The full-scale tests of the model sample on the power transformer of the high-voltage substation confirmed the assumption of the possibility of detecting the damaged unit separating it from the rest connected in one mechanical structure. A detailed analysis of the operation of each of the units is carried out by means of the general substation switchboard and displayed as graphs, diagrams and text messages. When the limit values of vibration are reached, faults in the operation of the unit are detected, the overlimit current values, a warning alarm is activated, and the command to disconnect the damaged unit is issued. The optimal solution for the organization of the information collection system using the principle of sensor networks, but combined

  2. Ion properties in a Hall current thruster operating at high voltage

    Science.gov (United States)

    Garrigues, L.

    2016-04-01

    Operation of a 5 kW-class Hall current Thruster for various voltages from 400 V to 800 V and a xenon mass flow rate of 6 mg s-1 have been studied with a quasi-neutral hybrid model. In this model, anomalous electron transport is fitted from ion mean velocity measurements, and energy losses due to electron-wall interactions are used as a tuned parameter to match expected electron temperature strength for same class of thruster. Doubly charged ions production has been taken into account and detailed collisions between heavy species included. As the electron temperature increases, the main channel of Xe2+ ion production becomes stepwise ionization of Xe+ ions. For an applied voltage of 800 V, the mass utilization efficiency is in the range of 0.8-1.1, and the current fraction of doubly charged ions varies between 0.1 and 0.2. Results show that the region of ion production of each species is located at the same place inside the thruster channel. Because collision processes mean free path is larger than the acceleration region, each type of ions experiences same potential drop, and ion energy distributions of singly and doubly charged are very similar.

  3. Challenges to Grid Synchronization of Single-Phase Grid-Connected Inverters in Zero-Voltage Ride-Through Operation

    DEFF Research Database (Denmark)

    Zhang, Zhen; Yang, Yongheng; Blaabjerg, Frede

    2016-01-01

    to remain connected under grid voltage sags (even zero voltage condition). In this case, much attention should be paid to the grid synchronization in such a way to properly ride-through grid faults. Thus, in this paper, the most commonly-used and recently-developed Phase Locked Loop (PLL) synchronization...... methods have been evaluated for single-phase grid-connected PV systems in the case of Zero-Voltage Ride-Through (ZVRT) operation. The performances of the prior-art PLL methods in response to zero voltage faults in terms of detection precision and dynamic response are assessed in this paper. Simulation...... results show that the Enhanced PLL (EPLL) and the Second Order Generalized Integrator based PLL (SOGI-PLL) are the most applicable to single-phase PV systems for ZVRT operation....

  4. Derivation of armature displacement and movement disturbances from current and voltage measurements on solenoid operated valves

    Energy Technology Data Exchange (ETDEWEB)

    Louati, Iskander Alexandre [AREVA NP GmbH (Germany). Service Sector Germany

    2009-07-01

    As part of the electric drive mechanisms of the safety system in nuclear power plants safety related solenoid operated valves (SOVs) are subject to design control, commissioning tests and periodical in-service inspections. AREVA has developed and qualified many methods and tools that have been embedded into as software tools called DAM for diagnosis and evaluation of the valve performance according to the KTA requirements. In the special case of COVs tracing the electric measurements with ADAM helps to detect anomalies at the SOVs and esp. those related to disturbances of the armature moved. The disturbances to be tested are divided into electrical and mechanical disturbances: voltage insufficiency, switch chattering; degradation of spring load, friction collaterally to armature displacement, partial or total obstruction of the armature.

  5. NEMO medium voltage converter factory acceptance, operational and final integration tests

    Science.gov (United States)

    Cocimano, Rosanna; NEMO Collaboration

    2011-01-01

    The NEMO Collaboration, as part of the KM3NeT EU-funded consortium, is developing technical solutions for the construction of a cubic-kilometer scale neutrino telescope in the Mediterranean sea several kilometers below the sea level and far from the shore. In this framework, after years of design, development, assembly and testing the Alcatel deep sea medium voltage power converter (MVC) is ready for deployment at 100 km from the Capo Passero shore station. The MVC converts the 10 kV to an instrument-friendly 375 V for a 10 kW power. The MVC will be presented with focus on the factory acceptance, operational and final integration tests that recently have been carried out.

  6. NEMO medium voltage converter factory acceptance, operational and final integration tests

    Energy Technology Data Exchange (ETDEWEB)

    Cocimano, Rosanna, E-mail: cocimano@lns.infn.i [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Sud, Via S. Sofia 62, 95123 Catania (Italy)

    2011-01-21

    The NEMO Collaboration, as part of the KM3NeT EU-funded consortium, is developing technical solutions for the construction of a cubic-kilometer scale neutrino telescope in the Mediterranean sea several kilometers below the sea level and far from the shore. In this framework, after years of design, development, assembly and testing the Alcatel deep sea medium voltage power converter (MVC) is ready for deployment at 100 km from the Capo Passero shore station. The MVC converts the 10 kV to an instrument-friendly 375 V for a 10 kW power. The MVC will be presented with focus on the factory acceptance, operational and final integration tests that recently have been carried out.

  7. Maximum Power Point Tracking of Photovoltaic power Generation System Based on Fuzzy Approximation of Operating Point Voltage with Radiation Intensity

    Directory of Open Access Journals (Sweden)

    H. Ijadi

    2012-09-01

    Full Text Available In this paper, a method to track the maximum power of solar panels based on fuzzy logic is presented. The proposed method is based on the relationship between radiation intensity and the voltage of maximum power operating point. With this relationship, at any time by measuring the light intensity, voltage can be calculated at the maximum power point by using fuzzy approximation function. In order to verify the proposed method, simulation results are presented.

  8. Comparison of microbial electrolysis cells operated with added voltage or by setting the anode potential

    KAUST Repository

    Nam, Joo-Youn

    2011-08-01

    Hydrogen production in a microbial electrolysis cell (MEC) can be achieved by either setting the anode potential with a potentiostat, or by adding voltage to the circuit with a power source. In batch tests the largest total gas production (46 ± 3 mL), lowest energy input (2.3 ± 0.3 kWh/m 3 of H2 generated), and best overall energy recovery (E+S = 58 ± 6%) was achieved at a set anode potential of EAn = -0.2 V (vs Ag/AgCl), compared to set potentials of -0.4 V, 0 V and 0.2 V, or an added voltage of Eap = 0.6 V. Gas production was 1.4 times higher with EAn = -0.2 V than with Eap = 0.6 V. Methane production was also reduced at set anode potentials of -0.2 V and higher than the other operating conditions. Continuous flow operation of the MECs at the optimum condition of EAn = -0.2 V initially maintained stable hydrogen gas production, with 68% H2 and 21% CH4, but after 39 days the gas composition shifted to 55% H2 and 34% CH 4. Methane production was not primarily anode-associated, as methane was reduced to low levels by placing the anode into a new MEC housing. These results suggest that MEC performance can be optimized in terms of hydrogen production rates and gas composition by setting an anode potential of -0.2 V, but that methanogen proliferation must be better controlled on non-anodic surfaces. © 2011, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.

  9. Design of a Ka-band gyro-TWT amplifier for broadband operation

    Energy Technology Data Exchange (ETDEWEB)

    Alaria, Mukesh Kumar; Sinha, A. K. [Microwave Tubes Area, CSIR-Central Electronics Engineering Research Institute, Pilani 333031 (India); Choyal, Y. [Department of Physics, Devi Ahilya Vishwavidyalaya, Indore (India)

    2013-07-15

    In this paper, the design of a Ka-band periodically ceramic loaded gyro-TWT amplifier has been carried out. The design predict that the interaction structure can produce more than 80 kW output power, 50 dB saturated gain, and 3 dB bandwidth for 65 kV and 5 A electron beam with velocity ratio (α) of 1.2. This paper describes the design and simulation of a high performance 35 GHz TE{sub 01} mode gyro-TWT that applies the same technique of employing a periodic dielectric loaded interaction structure to achieve stability and wide bandwidth. The design of input coupler with loaded interaction structure for Ka-band Gyro-TWT has been carried out using Ansoft hfss. The return loss (S{sub 11}) and transmission loss (S{sub 21}) of the Ka-band gyro-TWT input coupler have been found to be −27.3 dB and −0.05 dB, respectively. The design of output window for Ka-band Gyro-TWT has been carried out using cst microwave studio.

  10. Single conversion stage amplifier - SICAM

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.

    2005-12-15

    This Ph.D. thesis presents a thorough analysis of the so called SICAM - SIngle Converter stage AMplifier approach to building direct energy conversion audio power amplifiers. The mainstream approach for building isolated audio power amplifiers today consists of isolated DC power supply and Class D amplifier, which essentially represents a two stage solution, where each of the components can be viewed as separate and independent part. The proposed SICAM solution strives for direct energy conversion from the mains to the audio output, by dedicating the operation of the components one to another and integrating their functions, so that the final audio power amplifier represents a single-stage topology with higher efficiency, lower volume, less board space, lower component count and subsequently lower cost. The SICAM approach is both applicable to non-isolated and isolated audio power amplifiers, but the problems encountered in these two cases are different. Non-isolated SICAM solutions are intended for both AC mains-connected and battery-powered devices. In non-isolated mains-connected SICAMs the main idea is to simplify the power supply or even provide integrated power factor correction (PFC) functions, while still maintaining low component stress and good audio performance by generally decreasing the input voltage level to the Class D audio power amplifier. On the other hand, non-isolated battery-powered SICAMs have to cope with the ever changing battery voltage and provide output voltage levels which are both lower and higher than the battery voltage, while still being simple and single-stage energy conversion solutions. In isolated SICAMs the isolation transformer adjusts the voltage level on the secondary side to the desired level, so the main challenges here are decreasing the size of the magnetic core and reducing the number and size of bulky reactive components as much as possible. The main focus of this thesis is directed towards the isolated SICAMs and

  11. Wall-shaped electrodes for reducing the operation voltage of polymer-stabilized blue phase liquid crystal displays

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Miyoung; Kim, Min Su; Kang, Byeong Gyun; Kim, Mi-Kyung; Yoon, Sukin; Lee, Seung Hee [Polymer BIN Fusion Research Center, Department of Polymer Nano-Science and Technology, Chonbuk National University, Chonju, Chonbuk 561-756 (Korea, Republic of); Ge Zhibing; Rao Linghui; Gauza, Sebastian; Wu, Shin-Tson, E-mail: lsh1@chonbuk.ac.k, E-mail: swu@creol.ucf.ed [College of Optics and Photonics, University of Central Florida, Orlando, FL 32816 (United States)

    2009-12-07

    Polymer-stabilized blue phase liquid crystal displays based on the Kerr effect are emerging due to their submillisecond response time, wide view and simple fabrication process. However, the conventional in-plane switching device exhibits a relatively high operating voltage because the electric fields are restricted in the vicinity of the electrode surface. To overcome this technical barrier, we propose a partitioned wall-shaped electrode configuration so that the induced birefringence is uniform between electrodes throughout the entire cell gap. Consequently, the operating voltage is reduced by {approx} 2.8x with two transistors. The responsible physical mechanisms are explained.

  12. Fiber Amplifiers

    DEFF Research Database (Denmark)

    Rottwitt, Karsten

    2017-01-01

    The chapter provides a discussion of optical fiber amplifiers and through three sections provides a detailed treatment of three types of optical fiber amplifiers, erbium doped fiber amplifiers (EDFA), Raman amplifiers, and parametric amplifiers. Each section comprises the fundamentals including t...

  13. Comparative analysis of fourth-harmonic multiplying gyrotron traveling-wave amplifiers operating at different frequency multiplications

    Science.gov (United States)

    Yeh, Y. S.; Kao, W. J.; Li, L. J.; Guo, Y. W.

    2017-01-01

    The harmonic multiplying operation in a gyrotron traveling-wave amplifier (gyro-TWA) permits magnetic field reduction and frequency multiplication. This study presents a comparative analysis of fourth-harmonic multiplying gyro-TWAs with three schemes of operation. An improved mode-selective circuit using circular waveguides with various radii provides the rejection points within the range of operating frequencies to suppress the competing modes of gyro-TWAs. The simulated results reveal that gyro-TWAs are the most susceptible to the fundamental-harmonic TE11 competing mode, regardless of the operating scheme, and that the mode-selective circuit can provide an attenuation of more than 20 dB to suppress the competing modes. The amplification of the waves in a gyro-TWA depends on the lengths of the sections, and the simulated results show that the gain increases for all schemes, as the length of the lossy section or the length of the copper section increases. All schemes exhibit nearly the same saturated output powers and bandwidths; however, the saturated gain of the scheme at a high frequency multiplication ratio is less than that of the scheme at a low frequency multiplication ratio. Extensive numerical calculations of power and gain scaling are conducted for all schemes.

  14. Design of a Sample and Hold Circuit using Rail to Rail Low Voltage Compact Operational Amplifier and bootstrap Switching

    Directory of Open Access Journals (Sweden)

    Annu Saini

    2014-09-01

    Full Text Available This paper presents a low power high performance and higher sampling speed sample and hold circuit. The proposed circuit is designed at 180 nm technology and has high linearity. The circuit can be used for the ADC frontend applications and supports double sampling architecture. The proposed sample and hold circuit has common mode range beyond rail to rail and uses two differential pairs transistor stages connected in parallel as its input stage.

  15. Pyroelectric detectors with integrated operational amplifier for high modulation frequencies; Pyroelektrische Detektoren mit integriertem Operationsverstaerker fuer hohe Modulationsfrequenzen

    Energy Technology Data Exchange (ETDEWEB)

    Neumann, N.; Saenze, H.; Heinze, M. [InfraTec GmbH Dresden (Germany)

    2006-02-01

    In order to use the advantages of the current mode operation a pyroelectric detector family with integrated transimpedance amplifier (TIA) was developed particularly for modulation frequencies up to the kHz range with a simplified external circuitry for new application fields, e.g. absorption spectroscopy using quantum-cascade-laser. The essential advantages of the TIA arise from the small electrical time constant {tau}{sub E} and the short-circuiting of the pyroelectric element. A flat amplitude response up to some kHz was aimed at for a sufficiently high response of 7500 V/W, appr., also at high modulation frequencies. This can be achieved through a electrical time constant of 1 ms or less and a wide bandwidth of the op amp. The article describes in detail how these demands were accomplished and which compromises had to be accepted. (orig.)

  16. Portable musical instrument amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Christian, David E. (Danbury, CT)

    1990-07-24

    The present invention relates to a musical instrument amplifier which is particularly useful for electric guitars. The amplifier has a rigid body for housing both the electronic system for amplifying and processing signals from the guitar and the system's power supply. An input plug connected to and projecting from the body is electrically coupled to the signal amplifying and processing system. When the plug is inserted into an output jack for an electric guitar, the body is rigidly carried by the guitar, and the guitar is operatively connected to the electrical amplifying and signal processing system without use of a loose interconnection cable. The amplifier is provided with an output jack, into which headphones are plugged to receive amplified signals from the guitar. By eliminating the conventional interconnection cable, the amplifier of the present invention can be used by musicians with increased flexibility and greater freedom of movement.

  17. Efficient performance simulation of class D amplifier output stages

    DEFF Research Database (Denmark)

    Nyboe, Flemming; Risbo, Lars; Andreani, Pietro

    2005-01-01

    Straightforward simulation of amplifier distortion involves transient simulation of operation on a sine wave input signal, and a subsequent FFT of the output voltage. This approach is very slow on class D amplifiers, since the switching behavior forces simulation time steps that are many orders...... of magnitude smaller than the duration of one period of an audio sine wave. This work presents a method of simulating the amplifier transfer characteristic using a minimum amount of simulation time, and then deriving THD from the results....

  18. An Operational Amplifier with Recycling Folded Cascode Topology and Adaptive Biasing

    OpenAIRE

    Saumya Vi; Anu Gupta; Alok Mittal

    2014-01-01

    This paper presents a highly adaptive operational a mplifier with high gain, high bandwidth, high speed and low power consumption. By adopting the recyclin g folded cascode topology along with an adaptive- biasing circuit, this design achieves high performa nce in terms of gain-bandwidth product (GBW) and sl ew rate (SR). This single stage op-amp has been design ed in 0.18μ m technology with a power supply of 1.8V and a 5pF load. The...

  19. Torque harmonics of an asynchronous motor supplied by a voltage- or current-sourced inverter quasi-square operation

    Energy Technology Data Exchange (ETDEWEB)

    Kyyrae, J. [Helsinki University of Technology, Institute of Intelligent Power Electronics, Espoo (Finland)

    1997-12-31

    Voltage- and current-sourced dc-ac converters operating in quasi-square area are compared. Their characteristics are calculated with switching vector, which is space-vector of switching functions. When the load is an asynchronous motor various analytical equations, including torque, are calculated efficiently. Motor current and torque approximations are compared with the simulated ones. (orig.) 6 refs.

  20. Thermal Optimized Operation of the Single-Phase Full-Bridge PV Inverter under Low Voltage Ride-Through Mode

    DEFF Research Database (Denmark)

    Wang, Huai; Yang, Yongheng; Blaabjerg, Frede

    2013-01-01

    The efficiency of 98% has been reported on transformer-less photovoltaic (PV) inverters and the penetration of grid-connected PV systems is booming as well. In the future, the PV systems are expected to contribute to the grid stability by means of low voltage ride-through operation and grid suppo...

  1. Strong coupling operation of a free-electron-laser amplifier with an axial magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Rullier, J.L.; Devin, A.; Gardelle, J.; Labrouche, J.; Le Taillandier, P. [Commissariat a lEnergie Atomique, Boite Postale 2, 33114 Le Barp (France); Donohue, J.T. [Centre dEtudes Nucleaires de Bordeaux-Gradignan, Boite Postale 120, 33175 Gradignan (France)

    1996-03-01

    We present the results of a free-electron-laser (FEL) experiment at 35 GHz, using a strongly relativistic electron beam ({ital T}=1.75 MeV). The electron pulse length is 30 ns full width at half maximum with a peak current of 400 A. The FEL is designed to operate in the high-gain Compton regime, with a negative coupling parameter ({Phi}{lt}0) leading to a strong growth rate. More than 50 MW of rf power in the TE{sub 1}{sub 1} mode (43 dB gain) has been obtained with good reproducibility. The experimental results are in good agreement with predictions made using the three-dimensional stationary simulation code solitude. {copyright} {ital 1996 The American Physical Society.}

  2. Ping-pong auto-zero amplifier with glitch reduction

    Science.gov (United States)

    Larson, Mark R [Maple Grove, MN

    2008-01-22

    A ping-pong amplifier with reduced glitching is described. The ping-pong amplifier includes a nulling amplifier coupled to a switching network. The switching network is used to auto-zero a ping amplifier within a ping-pong amplifier. The nulling amplifier drives the output of a ping amplifier to a proper output voltage level during auto-zeroing of the ping amplifier. By being at a proper output voltage level, glitches associated with transitioning between a ping amplifier and a pong amplifier are reduced or eliminated.

  3. High-Voltage 1-kW dc/dc Converter Developed for Low-Temperature Operation

    Science.gov (United States)

    Patterson, Richard L.

    1998-01-01

    Recently, Lewis developed and demonstrated a high-voltage, 1-kW dc/dc converter that operates from room temperature to -184 C. A power supply designed for use in a NASA ion beam propulsion system was utilized as a starting point for the design of a low- (wide-) temperature dc/dc converter. For safety, we decided to halve the output voltage and power level, so the converter was designed for an 80-Vdc input and a 550-Vdc output at 1 kW.

  4. GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation

    Science.gov (United States)

    2011-01-01

    Hot electron light emission and lasing in semiconductor heterostructure (Hellish) devices are surface emitters the operation of which is based on the longitudinal injection of electrons and holes in the active region. These devices can be designed to be used as vertical cavity surface emitting laser or, as in this study, as a vertical cavity semiconductor optical amplifier (VCSOA). This study investigates the prospects for a Hellish VCSOA based on GaInNAs/GaAs material for operation in the 1.3-μm wavelength range. Hellish VCSOAs have increased functionality, and use undoped distributed Bragg reflectors; and this coupled with direct injection into the active region is expected to yield improvements in the gain and bandwidth. The design of the Hellish VCSOA is based on the transfer matrix method and the optical field distribution within the structure, where the determination of the position of quantum wells is crucial. A full assessment of Hellish VCSOAs has been performed in a device with eleven layers of Ga0.35In0.65N0.02As0.08/GaAs quantum wells (QWs) in the active region. It was characterised through I-V, L-V and by spectral photoluminescence, electroluminescence and electro-photoluminescence as a function of temperature and applied bias. Cavity resonance and gain peak curves have been calculated at different temperatures. Good agreement between experimental and theoretical results has been obtained. PMID:21711630

  5. Minimum-Voltage Vector Injection Method for Sensorless Control of PMSM for Low-Speed Operations

    DEFF Research Database (Denmark)

    Xie, Ge; Lu, Kaiyuan; Kumar, Dwivedi Sanjeet

    2016-01-01

    In this paper, a simple signal injection method is proposed for sensorless control of PMSM at low speed, which ideally requires one voltage vector only for position estimation. The proposed method is easy to implement resulting in low computation burden. No filters are needed for extracting...... may also be further developed to inject two opposite voltage vectors to reduce the effects of inverter voltage error on the position estimation accuracy. The effectiveness of the proposed method is demonstrated by comparing with other sensorless control method. Theoretical analysis and experimental...

  6. Design and development of high voltage high power operational amplifier using thick film technology

    Indian Academy of Sciences (India)

    Krishna Mohan Nutheti; Vinod S Chippalakatti; Shashikala Prakash

    2008-10-01

    Applications of power operational amplifiers (opamps) are increasing day by day in the industry as they are used in audio amplifiers, Piezo transducer systems and the electron deflection systems. Power operational amplifiers have all the features of a general purpose opamp except the additional power handling capability. The power handling feature can be achieved using an external circuitry around a regular opamp. Normally power opamps can deliver current more than 50 mA and can operate on the supply voltage more than ±25 V. This paper gives the details of one of the power opamps developed to drive the Piezo Actuators for Active Vibration Control (AVC) of aircraft/aerospace structures. The designed power opamp will work on ±200 V supply voltage and can deliver 200 mA current.

  7. Determination of threshold and maximum operating electric stresses for selected high voltage insulation. Task 3: Investigation of high voltage capacitor insulation

    Science.gov (United States)

    Sosnowski, M.; Eager, G. S., Jr.

    1984-03-01

    The threshold voltage of capacitor insulation was investigated. The experimental work was performed on samples prepared from commercial polypropylene insulated, liquid-filled capacitors. The samples were vacuum-impregnated with the original capacitor insulating liquid obtained from the manufacturer. A limited number of full-size capacitor elements also were tested. Impulse voltage breakdown tests with dc voltage prestressing were performed at room temperature and 75 C. From the results of these tests, the threshold voltage of the samples of the capacitor insulation was determined at both temperatures and that of the whole capacitor elements at room temperature. The threshold voltage of the capacitor insulation was found to be approximately equal to the impulse breakdown voltage. No difference was found between the threshold voltage at room temperature and at 75 C. The threshold voltage of the whole capacitor elements at room temperature was found to be equal to approximately 80% of the threshold voltage of the capacitor insulation samples.

  8. Potential L-Type Voltage-Operated Calcium Channel Blocking Effect of Drotaverine on Functional Models.

    Science.gov (United States)

    Patai, Zoltán; Guttman, András; Mikus, Endre G

    2016-12-01

    Drotaverine is considered an inhibitor of cyclic-3',5'-nucleotide-phophodiesterase (PDE) enzymes; however, published receptor binding data also support the potential L-type voltage- operated calcium channel (L-VOCC) blocking effect of drotaverine. Hence, in this work, we focus on the potential L-VOCC blocking effect of drotaverine by using L-VOCC-associated functional in vitro models. Accordingly, drotaverine and reference agents were tested on KCl-induced guinea pig tracheal contraction. Drotaverine, like the L-VOCC blockers nifedipine or diltiazem, inhibited the KCl-induced inward Ca(2+)- induced contraction in a concentration- dependent fashion. The PDE inhibitor theophylline had no effect on the KCl-evoked contractions, indicating its lack of inhibition on inward Ca(2+) flow. Drotaverine was also tested on the L-VOCC-mediated resting Ca(2+) refill model. In this model, the extracellular Ca(2+) enters the cells to replenish the emptied intracellular Ca(2+) stores. Drotaverine and L-VOCC blocker reference molecules inhibited Ca(2+) replenishment of Ca(2+)-depleted preparations detected by agonist-induced contractions in post-Ca(2+) replenishment Ca(2+)-free medium. Theophylline did not modify the Ca(2+) store replenishment after contraction. It seems that drotaverine, but not theophylline, inhibits inward Ca(2+) flux. The addition of CaCl2 to Ca(2+)-free medium containing the agonist induced inward Ca(2+) flow and subsequent contraction of Ca(2+)-depleted tracheal preparations. Drotaverine, similar to the L-VOCC blockers, inhibited inward Ca(2+) flow and blunted the slope of CaCl2-induced contraction in agonist containing Ca(2+)-free medium with Ca(2+)-depleted tracheal preparations. These results show that drotaverine behaves like L-VOCC blockers but, unlike PDE inhibitors using L-VOCC associated in vitro experimental models.

  9. Controlled operation of the Islanded portion of the CIGRE Low Voltage distribution network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Bak, Claus Leth;

    2017-01-01

    be switched to the Voltage-Frequency (VF) control mode. In case of islanding, the network loses it slack reference and this reference is established by the use of VF controller. The voltage and the frequency of the islanded MG deviate when it is disconnected from the transmission grid and these deviations...... are according to the load-generation imbalance in the islanded MG. The voltage and the frequency of the islanded MG can be restored to the permissible limits if the desired/exceeded amount of active and reactive power is injected/absorbed by the locally available sources in islanded MG. This paper proposes...... the control strategy which can compensate the problems of the voltage and the frequency deviations in the islanded MG. The selection of the VF controller for the most suitable DG unit of the LV test network is also presented in this paper and effectiveness of the controllers is verified by presenting...

  10. The Electron Beam Semiconductor (EBS) amplifier

    Science.gov (United States)

    True, R. M.; Baxendale, J. F.

    1980-07-01

    The Electron Beam Semiconductor (EBS) concept has existed for three decades; but only within the last decade has an active, well-defined program been underway to develop devices that can operate as high-power radio frequency(RF) amplifiers, fast risetime switches, and current and voltage pulse amplifiers. This report discusses the test procedures, data and results of reliability testing of RF and video pulse EBS amplifiers at Electronics Research and Development Command (ERADCOM), Fort Monmouth, New Jersey. Also, the experimental analysis of the series connected diode EBS device is described in detail. Finally, the report concludes with a discussion of the state-of-the-art of EBS and future trends of the technology.

  11. Wideband pulse amplifiers for the NECTAr chip

    Science.gov (United States)

    Sanuy, A.; Delagnes, E.; Gascon, D.; Sieiro, X.; Bolmont, J.; Corona, P.; Feinstein, F.; Glicenstein, J.-F.; Naumann, C. L.; Nayman, P.; Ribó, M.; Tavernet, J.-P.; Toussenel, F.; Vincent, P.; Vorobiov, S.

    2012-12-01

    The NECTAr collaboration's FE option for the camera of the CTA is a 16 bits and 1-3 GS/s sampling chip based on analog memories including most of the readout functions. This works describes the input amplifiers of the NECTAr ASIC. A fully differential wideband amplifier, with voltage gain up to 20 V/V and a BW of 400 MHz. As it is impossible to design a fully differential OpAmp with an 8 GHz GBW product in a 0.35 CMOS technology, an alternative implementation based on HF linearized transconductors is explored. The output buffer is a class AB miller operational amplifier, with special non-linear current boost.

  12. Wideband pulse amplifiers for the NECTAr chip

    Energy Technology Data Exchange (ETDEWEB)

    Sanuy, A., E-mail: asanuy@ecm.ub.es [Dept. AM i Dept. ECM, Institut de Ciencies del Cosmos (ICC), Universitat de Barcelona. Marti i Franques 1, E08028, Barcelona (Spain); Delagnes, E. [IRFU/DSM/CEA, CE-Saclay, Bat. 141 SEN Saclay, F-91191, Gif-sur-Yvette (France); Gascon, D. [Dept. AM i Dept. ECM, Institut de Ciencies del Cosmos (ICC), Universitat de Barcelona. Marti i Franques 1, E08028, Barcelona (Spain); Sieiro, X. [Departament d' Electronica, Universitat de Barcelona. Marti i Franques 1, E08028, Barcelona (Spain); Bolmont, J.; Corona, P. [LPNHE, Universite Paris VI and Universite Paris VII and IN2P3/CNRS, Barre 12-22, 1er etage, 4 place Jussieu, 75252 Paris (France); Feinstein, F. [LUPM, Universite Montpellier II and IN2P3/CNRS, CC072, bat. 13, place Eugene Bataillon, 34095 Montpellier (France); Glicenstein, J-F. [IRFU/DSM/CEA, CE-Saclay, Bat. 141 SEN Saclay, F-91191, Gif-sur-Yvette (France); Naumann, C.L.; Nayman, P. [LPNHE, Universite Paris VI and Universite Paris VII and IN2P3/CNRS, Barre 12-22, 1er etage, 4 place Jussieu, 75252 Paris (France); Ribo, M. [Dept. AM i Dept. ECM, Institut de Ciencies del Cosmos (ICC), Universitat de Barcelona. Marti i Franques 1, E08028, Barcelona (Spain); and others

    2012-12-11

    The NECTAr collaboration's FE option for the camera of the CTA is a 16 bits and 1-3 GS/s sampling chip based on analog memories including most of the readout functions. This works describes the input amplifiers of the NECTAr ASIC. A fully differential wideband amplifier, with voltage gain up to 20 V/V and a BW of 400 MHz. As it is impossible to design a fully differential OpAmp with an 8 GHz GBW product in a 0.35 CMOS technology, an alternative implementation based on HF linearized transconductors is explored. The output buffer is a class AB miller operational amplifier, with special non-linear current boost.

  13. ZnO/NiO diode-based charge-trapping layer for flash memory featuring low-voltage operation.

    Science.gov (United States)

    Sun, Chergn-En; Chen, Chin-Yu; Chu, Ka-Lip; Shen, Yung-Shao; Lin, Chia-Chun; Wu, Yung-Hsien

    2015-04-01

    A stacked oxide semiconductor of n-type ZnO/p-type NiO with diode behavior was proposed as the novel charge-trapping layer to enable low-voltage flash memory for green electronics. The memory performance outperforms that of other devices with high κ and a nanocrystal-based charge-trapping layer in terms of a large hysteresis memory window of 2.02 V with ±3 V program/erase voltage, a high operation speed of 1.88 V threshold voltage shift by erasing at -4 V for 1 ms, negligible memory window degradation up to 10(5) operation cycles, and 16.2% charge loss after 10 years of operation at 85 °C. The promising electrical characteristics can be explained by the negative conduction band offset with respect to Si of ZnO that is beneficial to electron injection and storage, the large number of trapping sites of NiO that act as other good storage media, and most importantly the built-in electric field between n-type ZnO and p-type NiO that provides a favorable electric field for program and erase operation. The process of diode-based flash memory is fully compatible with incumbent VLSI technology, and utilization of the built-in electric field ushers in a new avenue of accomplishing green flash memory.

  14. Generation of equivalent forms of operational trans-conductance amplifier-RC sinusoidal oscillators: the nullor approach

    Directory of Open Access Journals (Sweden)

    Raj Senani

    2014-06-01

    Full Text Available It has been shown in two earlier papers published from this study that corresponding to a given single-operational trans-conductance amplifier (single-OTA-RC and dual-OTA-RC sinusoidal oscillators, there are three other structurally distinct equivalent forms having the same characteristic equation, one of which employs both grounded capacitors (GC. In this study, an earlier nullor-based theory of generating equivalent op-amp oscillator circuits, proposed by the first author, is extended to derive equivalent OTA-RC circuits which discloses the existence of an additional number of equivalent forms for the same given OTA-RC oscillators than those predicted by the quoted earlier works, and thereby considerably enlarging the set of equivalents of a given OTA-RC oscillator. Furthermore, the presented nullor-based theory of generating equivalent OTA-RC oscillators results in three additional interesting outcomes: (i the revelation that corresponding to any given OTA-RC oscillator there are two ‘both-GC’ oscillators (and not merely one, as derived in the quoted earlier works; (ii the availability of explicit current outputs in several of the derived equivalents and (iii the realisability explicit-current-output ‘quadrature oscillators’ in some of the generated equivalent oscillators. The workability of the generated equivalent OTA-RC oscillators has been verified by SPICE simulations, based on CMOS OTAs using 0.18 µm CMOS technology process parameters, and some sample results are given.

  15. A High-Performance Operational Amplifier for High-Speed High-Accuracy Switch-Capacitor Cells

    Institute of Scientific and Technical Information of China (English)

    Qi Fan; Ning Ning; Qi Yu; Da Chen

    2007-01-01

    A highspeed highaccuracy fully differenttial operational amplifier (opamp) is realized based on noMillercapacitor feedforward (NMCF) compensation scheme. In order to achieve a good phase margin, the NMCF compensation scheme uses the positive phase shift of lefthalfplane (LHP) zero caused by the feedforward path to counteract the negative phase shift of the nondominant pole. Compared to traditional Miller compensation method, the opamp obtains high gain and wide band synchronously without the polesplitting effect while saves significant chip area due to the absence of the Miller capacitor. Simulated by the 0.35 μm CMOS RF technology, the result shows that the openloop gain of the opamp is 118 dB with the unity gainbandwidth (UGBW)of 1 GHz, and the phase margin is 61°while the settling time is 5.8 ns when achieving 0.01% accuracy. The opamp is especially suitable for the frontend sample/hold (S/H)cell and the multiplying D/A converter(MDAC) module of the highspeed highresolution pipelined A/D converters(ADCs).

  16. Single Event Transient Analysis of an SOI Operational Amplifier for Use in Low-Temperature Martian Exploration

    Science.gov (United States)

    Laird, Jamie S.; Scheik, Leif; Vizkelethy, Gyorgy; Mojarradi, Mohammad M; Chen, Yuan; Miyahira, Tetsuo; Blalock, Benjamin; Greenwell, Robert; Doyle, Barney

    2006-01-01

    The next generation of Martian rover#s to be launched by JPL are to examine polar regions where temperatures are extremely low and the absence of an earth-like atmosphere results in high levels of cosmic radiation at ground level. Cosmic rays lead to a plethora of radiation effects including Single Event Transients (SET) which can severely degrade microelectronic functionality. As such, a radiation-hardened, temperature compensated CMOS Single-On-Insulator (SOI) Operational Amplifier has been designed for JPL by the University of Tennessee and fabricated by Honeywell using the SOI V process. SOI technology has been shownto be far less sensitive to transient effects than both bulk and epilayer Si. Broad beam heavy-ion tests at the University of Texas A&M using Kr and Xebeams of energy 25MeV/amu were performed to ascertain the duration and severity of the SET for the op-amp configured for a low and high gain application. However, some ambiguity regarding the location of transient formation required the use of a focused MeV ion microbeam. A 36MeV O6(+) microbeam. the Sandia National Laboratory (SNL) was used to image and verify regions of particular concern. This is a viewgraph presentation

  17. Fully integrated high quality factor GmC bandpass filter stage with highly linear operational transconductance amplifier

    Directory of Open Access Journals (Sweden)

    J. Briem

    2017-09-01

    Full Text Available This paper presents an electrical, fully integrated, high quality (Q factor GmC bandpass filter (BPF stage for a wireless 27 MHz direct conversion receiver for a bendable sensor system-in-foil (Briem et al., 2016. The core of the BPF with a Q factor of more than 200 is an operational transconductance amplifier (OTA with a high linearity at an input range of up to 300 mVpp, diff. The OTA's signal-to-noise-and-distortion-ratio (SNDR of more than 80 dB in the mentioned range is achieved by stabilizing its transconductance Gm with a respective feedback loop and a source degeneration resistors RDG. The filter stage can be tuned and is tolerant to global and local process variations due to offset and common-mode feedback (CMFB control circuits. The results are determined by periodic steady state (PSS simulations at more than 200 global and local process variation parameter and temperature points and corner simulations. It is expected, that the parasitic elements of the layout have no significant influence on the filter behaviour. The current consumption of the whole filter stage is less than 600 µA.

  18. Fully integrated high quality factor GmC bandpass filter stage with highly linear operational transconductance amplifier

    Science.gov (United States)

    Briem, Jochen; Mader, Marco; Reiter, Daniel; Amirpour, Raul; Grözing, Markus; Berroth, Manfred

    2017-09-01

    This paper presents an electrical, fully integrated, high quality (Q) factor GmC bandpass filter (BPF) stage for a wireless 27 MHz direct conversion receiver for a bendable sensor system-in-foil (Briem et al., 2016). The core of the BPF with a Q factor of more than 200 is an operational transconductance amplifier (OTA) with a high linearity at an input range of up to 300 mVpp, diff. The OTA's signal-to-noise-and-distortion-ratio (SNDR) of more than 80 dB in the mentioned range is achieved by stabilizing its transconductance Gm with a respective feedback loop and a source degeneration resistors RDG. The filter stage can be tuned and is tolerant to global and local process variations due to offset and common-mode feedback (CMFB) control circuits. The results are determined by periodic steady state (PSS) simulations at more than 200 global and local process variation parameter and temperature points and corner simulations. It is expected, that the parasitic elements of the layout have no significant influence on the filter behaviour. The current consumption of the whole filter stage is less than 600 µA.

  19. Investigation of Non-classical Under lap Design on Linearity of a Folded Cascode Operational Transconductance Amplifier (OTA)

    Science.gov (United States)

    Alam, M. S.; Kranti, A.; Armstrong, G. A.

    2011-08-01

    The significance of optimization of gate-source/drain extension region (also known as a non-classical underlap design) in double gate (DG) silicon-on-insulator (SOI) FETs to improve the linearity performance of a low power folded cascode operational transconductance amplifier (OTA) is described. Based on a new figure-of-merit (FoM) involving AV, linearity, unity gain bandwidth fT and dc power consumption PDC, this article presents guideline for optimum design for underlap spacer s and film thickness Tsi to maximize the performance of OTA. It has been shown that FoM exhibited by an underlap DG MOSFET OTA gives significantly higher value (≅9) compared to a conventional single gate bulk MOSFET OTA. This is due to a combination of both higher fT, and higher gain AV for the same linearity at low power consumption of 360 μW. With gate length scaling, FoM continues to improve, primarily due to higher value of fT. A scaled bulk MOSFET OTA exhibits similar but much smaller enhancement in trend for FoM.

  20. Construction and evaluation of ion selective electrodes for nitrate with a summing operational amplifier. Application to tobacco analysis.

    Science.gov (United States)

    Pérez-Olmos, R; Rios, A; Fernández, J R; Lapa, R A; Lima, J L

    2001-01-05

    In this paper, the construction and evaluation of an electrode selective to nitrate with improved sensitivity, constructed like a conventional electrode (ISE) but using an operational amplifier to sum the potentials supplied by four membranes (ESOA) is described. The two types of electrodes, without an inner reference solution, were constructed using tetraoctylammonium bromide as sensor, dibutylphthalate as solvent mediator and PVC as plastic matrix, the membranes obtained directly applied onto a conductive epoxy resin support. After the comparative evaluation of their working characteristics they were used in the determination of nitrate in different types of tobacco. The limit of detection of the direct potentiometric method developed was found to be 0.18 g kg(-1) and the precision and accuracy of the method, when applied to eight different samples of tobacco, expressed in terms of mean R.S.D. and average percentage of spike recovery was 0.6 and 100.3%, respectively. The comparison of variances showed, on all ocassions, that the results obtained by the ESOA were similar to those obtained by the conventional ISE, but with higher precision. Linear regression analysis showed good agreement (r=0.9994) between the results obtained by the developed potentiometric method and those of a spectrophotometric method based on brucine, adopted as reference method, when applied simultaneously to 32 samples of different types of tobacco.

  1. Single Event Transient Analysis of an SOI Operational Amplifier for Use in Low-Temperature Martian Exploration

    Science.gov (United States)

    Laird, Jamie S.; Scheik, Leif; Vizkelethy, Gyorgy; Mojarradi, Mohammad M; Chen, Yuan; Miyahira, Tetsuo; Blalock, Benjamin; Greenwell, Robert; Doyle, Barney

    2006-01-01

    The next generation of Martian rover#s to be launched by JPL are to examine polar regions where temperatures are extremely low and the absence of an earth-like atmosphere results in high levels of cosmic radiation at ground level. Cosmic rays lead to a plethora of radiation effects including Single Event Transients (SET) which can severely degrade microelectronic functionality. As such, a radiation-hardened, temperature compensated CMOS Single-On-Insulator (SOI) Operational Amplifier has been designed for JPL by the University of Tennessee and fabricated by Honeywell using the SOI V process. SOI technology has been shownto be far less sensitive to transient effects than both bulk and epilayer Si. Broad beam heavy-ion tests at the University of Texas A&M using Kr and Xebeams of energy 25MeV/amu were performed to ascertain the duration and severity of the SET for the op-amp configured for a low and high gain application. However, some ambiguity regarding the location of transient formation required the use of a focused MeV ion microbeam. A 36MeV O6(+) microbeam. the Sandia National Laboratory (SNL) was used to image and verify regions of particular concern. This is a viewgraph presentation

  2. A self-amplified transistor immunosensor under dual gate operation: highly sensitive detection of hepatitis B surface antigen

    Science.gov (United States)

    Lee, I.-K.; Jeun, M.; Jang, H.-J.; Cho, W.-J.; Lee, K. H.

    2015-10-01

    Ion-sensitive field-effect transistors (ISFETs), although they have attracted considerable attention as effective immunosensors, have still not been adopted for practical applications owing to several problems: (1) the poor sensitivity caused by the short Debye screening length in media with high ion concentration, (2) time-consuming preconditioning processes for achieving the highly-diluted media, and (3) the low durability caused by undesirable ions such as sodium chloride in the media. Here, we propose a highly sensitive immunosensor based on a self-amplified transistor under dual gate operation (immuno-DG ISFET) for the detection of hepatitis B surface antigen. To address the challenges in current ISFET-based immunosensors, we have enhanced the sensitivity of an immunosensor by precisely tailoring the nanostructure of the transistor. In the pH sensing test, the immuno-DG ISFET showed superior sensitivity (2085.53 mV per pH) to both standard ISFET under single gate operation (58.88 mV per pH) and DG ISFET with a non-tailored transistor (381.14 mV per pH). Moreover, concerning the detection of hepatitis B surface antigens (HBsAg) using the immuno-DG ISFET, we have successfully detected trace amounts of HBsAg (22.5 fg mL-1) in a non-diluted 1× PBS medium with a high sensitivity of 690 mV. Our results demonstrate that the proposed immuno-DG ISFET can be a biosensor platform for practical use in the diagnosis of various diseases.Ion-sensitive field-effect transistors (ISFETs), although they have attracted considerable attention as effective immunosensors, have still not been adopted for practical applications owing to several problems: (1) the poor sensitivity caused by the short Debye screening length in media with high ion concentration, (2) time-consuming preconditioning processes for achieving the highly-diluted media, and (3) the low durability caused by undesirable ions such as sodium chloride in the media. Here, we propose a highly sensitive immunosensor

  3. A self-amplified transistor immunosensor under dual gate operation: highly sensitive detection of hepatitis B surface antigen.

    Science.gov (United States)

    Lee, I-K; Jeun, M; Jang, H-J; Cho, W-J; Lee, K H

    2015-10-28

    Ion-sensitive field-effect transistors (ISFETs), although they have attracted considerable attention as effective immunosensors, have still not been adopted for practical applications owing to several problems: (1) the poor sensitivity caused by the short Debye screening length in media with high ion concentration, (2) time-consuming preconditioning processes for achieving the highly-diluted media, and (3) the low durability caused by undesirable ions such as sodium chloride in the media. Here, we propose a highly sensitive immunosensor based on a self-amplified transistor under dual gate operation (immuno-DG ISFET) for the detection of hepatitis B surface antigen. To address the challenges in current ISFET-based immunosensors, we have enhanced the sensitivity of an immunosensor by precisely tailoring the nanostructure of the transistor. In the pH sensing test, the immuno-DG ISFET showed superior sensitivity (2085.53 mV per pH) to both standard ISFET under single gate operation (58.88 mV per pH) and DG ISFET with a non-tailored transistor (381.14 mV per pH). Moreover, concerning the detection of hepatitis B surface antigens (HBsAg) using the immuno-DG ISFET, we have successfully detected trace amounts of HBsAg (22.5 fg mL(-1)) in a non-diluted 1× PBS medium with a high sensitivity of 690 mV. Our results demonstrate that the proposed immuno-DG ISFET can be a biosensor platform for practical use in the diagnosis of various diseases.

  4. High-Precision Multi-Wave Rectifier Circuit Operating in Low Voltage + 1.5 Volt Current Mode

    Directory of Open Access Journals (Sweden)

    Bancha Burapattanasiri

    2009-12-01

    Full Text Available This article is present high-precision multi-wave rectifier circuit operating in low voltage +/- 1.5 Volt current modes by CMOS technology 0.5 μm, receive input and give output in current mode, respond at high frequency period. The structure compound with high-speed current comparator circuit, current mirror circuit, and CMOS inverter circuit. PSpice program used for confirmation the performance of testing. The PSpice program shows operating of circuit is able to working at maximum input current 400 μAp-p, maximum frequency responding 200 MHz, high precision and low power losses, and non-precision zero crossing output signal.Keywords-component; rectifier circuit; high-precision; low voltage; current mode;

  5. Challenges to Grid Synchronization of Single-Phase Grid-Connected Inverters in Zero-Voltage Ride-Through Operation

    DEFF Research Database (Denmark)

    Zhang, Zhen; Yang, Yongheng; Blaabjerg, Frede;

    2016-01-01

    methods have been evaluated for single-phase grid-connected PV systems in the case of Zero-Voltage Ride-Through (ZVRT) operation. The performances of the prior-art PLL methods in response to zero voltage faults in terms of detection precision and dynamic response are assessed in this paper. Simulation......With the fast development in Photovoltaic (PV) technology, the relevant grid-connection requirements/standards are continuously being updated, and more challenges have been imposed on both single-phase and three-phase grid-connected PV systems. For instance, PV systems are currently required...... results show that the Enhanced PLL (EPLL) and the Second Order Generalized Integrator based PLL (SOGI-PLL) are the most applicable to single-phase PV systems for ZVRT operation....

  6. Ferroelectric Field-Effect Transistor Differential Amplifier Circuit Analysis

    Science.gov (United States)

    Phillips, Thomas A.; MacLeod, Todd C.; Ho, Fat D.

    2008-01-01

    There has been considerable research investigating the Ferroelectric Field-Effect Transistor (FeFET) in memory circuits. However, very little research has been performed in applying the FeFET to analog circuits. This paper investigates the use of FeFETs in a common analog circuit, the differential amplifier. The two input Metal-Oxide-Semiconductor (MOS) transistors in a general MOS differential amplifier circuit are replaced with FeFETs. Resistors are used in place of the other three MOS transistors. The FeFET model used in the analysis has been previously reported and was based on experimental device data. Because of the FeFET hysteresis, the FeFET differential amplifier has four different operating modes depending on whether the FeFETs are positively or negatively polarized. The FeFET differential amplifier operation in the different modes was analyzed by calculating the amplifier voltage transfer and gain characteristics shown in figures 2 through 5. Comparisons were made between the FeFET differential amplifier and the standard MOS differential amplifier. Possible applications and benefits of the FeFET differential amplifier are discussed.

  7. Flexible viologen electrochromic devices with low operational voltages using reduced graphene oxide electrodes.

    Science.gov (United States)

    Palenzuela, Jesús; Viñuales, Ana; Odriozola, Ibon; Cabañero, Germán; Grande, Hans J; Ruiz, Virginia

    2014-08-27

    Reduced graphene oxide (RGO) films have been electrodeposited on indium tin oxide-coated polyethylene terephthalate (ITO-PET) substrates from graphene oxide (GO) solutions, and the resulting flexible transparent electrodes have been used in electrochromic devices of ethyl viologen (EtV(2+)). The electrochromic performance of devices with bare ITO-PET electrodes and ITO-PET coated with RGO has been compared. Under continuous cycling tests up to large voltages, the RGO film was oxidized and dispersed in the electrochromic mixture. The resulting devices, which contained GO and RGO in the electrochromic mixture, showed lower switching voltages between the colored and bleached states. This electrocatalytic activity of the solution-phase GO/RGO pair toward the electrochemical reaction of the electrochromic redox couple (the dication EtV(2+) and the radical cation EtV(+•)) allowed devices with an optical contrast higher than the contrast of those free of GO at the same applied voltage.

  8. Modeling and Control of Low Voltage Flexible Units for Enhanced Operation of Distribution Feeders

    DEFF Research Database (Denmark)

    Raboni, Pietro; Hu, Weihao; Chaudhary, Sanjay

    2013-01-01

    Battery (EVB) is proposed for providing primary regulation in grid connected mode and for hierarchically manage an islanded LV distribution feeder. The unit models are described and a novel EVB model directly based on manufacturer’s data is proposed and evaluated comparing its performances with Sim......PowerSystems library block. Moreover a voltage dependant power term is applied to the Voltage-Source Converter (VSC) control scheme of the EVB for improving the performances of the islanded feeder. The control is tested in case of under frequency and consequent load shedding occurring at the residential feeder...

  9. Accurate Switched-Voltage voltage averaging circuit

    OpenAIRE

    金光, 一幸; 松本, 寛樹

    2006-01-01

    Abstract ###This paper proposes an accurate Switched-Voltage (SV) voltage averaging circuit. It is presented ###to compensated for NMOS missmatch error at MOS differential type voltage averaging circuit. ###The proposed circuit consists of a voltage averaging and a SV sample/hold (S/H) circuit. It can ###operate using nonoverlapping three phase clocks. Performance of this circuit is verified by PSpice ###simulations.

  10. Evaluation of Conservation Voltage Reduction with Analytic Hierarchy Process: A Decision Support Framework in Grid Operations Planning

    Directory of Open Access Journals (Sweden)

    Kyungsung An

    2016-12-01

    Full Text Available This paper presents a systematic framework to evaluate the performance of conservation voltage reduction (CVR by determining suitable substations for CVR in operations planning. Existing CVR planning practice generally only focuses on the energy saving aspect without taking other underlying attributes into account, i.e., network topology and reduced voltage effects on other substations. To secure the desired operating reserve and avoid any adverse impacts, these attributes should be considered for implementing CVR more effectively. This research develops a practical decision-making framework based on the analytic hierarchy process (AHP to quantify several of the aforementioned attributes. Candidate substations for CVR deployment are prioritized such that performances are compared in terms of power transfer distribution factor (PTDF, voltage sensitivity factor (VSF, and CVR factor. In addition, to meet a specified reserve requirement, an integer programming approach is adopted to select potential substations for CVR implementations. Case studies for a Korean electric power system under diverse operating conditions are performed to demonstrate the effectiveness of the proposed method.

  11. SPS RF System Amplifier plant

    CERN Multimedia

    1977-01-01

    The picture shows a 2 MW, 200 MHz amplifier plant with feeder lines. The main RF-system of the SPS comprises four cavities: two of 20 m length and two of 16.5 m length. They are all installed in one long straight section (LSS 3). These cavities are of the travelling-wave type operating at a centre frequency of 200.2 MHz. They are wideband, filling time about 700 ns and untuned. The power amplifiers, using tetrodes are installed in a surface building 200 m from the cavities. Initially only two cavities were installed, a third cavity was installed in 1978 and a forth one in 1979. The number of power amplifiers was also increased: to the first 2 MW plant a second 2 MW plant was added and by end 1979 there were 8 500 kW units combined in pairs to feed each of the 4 cavities with up to about 1 MW RF power, resulting in a total accelerating voltage of about 8 MV. See also 7412016X, 7412017X, 7411048X.

  12. Wireless Josephson amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Narla, A.; Sliwa, K. M.; Hatridge, M.; Shankar, S.; Frunzio, L.; Schoelkopf, R. J.; Devoret, M. H. [Department of Applied Physics, Yale University, New Haven, Connecticut 06511 (United States)

    2014-06-09

    Josephson junction parametric amplifiers are playing a crucial role in the readout chain in superconducting quantum information experiments. However, their integration with current 3D cavity implementations poses the problem of transitioning between waveguide, coax cables, and planar circuits. Moreover, Josephson amplifiers require auxiliary microwave components, like directional couplers and/or hybrids, that are sources of spurious losses and impedance mismatches that limit measurement efficiency and amplifier tunability. We have developed a wireless architecture for these parametric amplifiers that eliminates superfluous microwave components and interconnects. This greatly simplifies their assembly and integration into experiments. We present an experimental realization of such a device operating in the 9–11 GHz band with about 100 MHz of amplitude gain-bandwidth product, on par with devices mounted in conventional sample holders. The simpler impedance environment presented to the amplifier also results in increased amplifier tunability.

  13. INVESTIGATION ON EMI EFFECTS IN BANDGAP VOLTAGE REFERENCES

    OpenAIRE

    Fiori, Franco; Crovetti S., Paolo

    2002-01-01

    International audience; In this paper the susceptibility of integrated bandgap voltage references to Electromagnetic Interference (EMI) is investigated by on-chip measurements carried out on Kuijk and Tsividis bandgap circuits. These measurements highlight the offset in the reference voltage induced by continuous wave (CW) EMI and the complete failures which may be experienced by bandgap circuits. The role of the susceptibility of the startup circuit and of the operational amplifier which are...

  14. 1.5 V低功耗CMOS恒跨导轨对轨运算放大器%A 1.5 V Low-power Rail-to-Rail CMOS Operational Amplifier with Constant-gm

    Institute of Scientific and Technical Information of China (English)

    邓红辉; 尹勇生; 高明伦

    2009-01-01

    运算放大器是模拟集成电路中用途最广、最基本的部件.随着系统功耗及电源电压的降低,传统的运算放大器已经不能满足低压下大共模输入范围及宽输出摆幅的要求.轨对轨运算放大器可以有效解决这一问题,然而传统的轨对轨运算放大器存在跨导不恒定的缺点.本文设计一种1.5V低功耗CMOS恒跨导轨对轨运算放大器,输入级采用最小电流选择电路,不仅实现了跨导的恒定,而且具有跨导不依赖于理想平方律模型、MOS管可以工作于所有区域、移植性好的优点.输出级采用前馈式AB类输出级,不仅能够精确控制输出晶体管电流,而且使输出达到轨对轨全摆幅.所设计的运算放大器采用了改进的级联结构,以减小运算放大器的噪声和失调.基于SMIC 0.18 μm工艺模型.利用Hspice软件对电路进行仿真,仿真结果表明,当电路驱动2 pF的电容负载以及10 KΩ的电阻负载时,直流增益达到83.2 dB,单位增益带宽为7.76 MHz,相位裕度为63°;输入输出均达到轨对轨全摆幅;在整个共模输入变化范围内跨导变化率仅为2.49%;具有较高的共模抑制比和电源抑制比;在1.5V低压下正常工作,静态功耗仅为0.24mW.%Operational amplifier is a basic device, most widely used in the analog integrated circuits. With the reduction of the system power consumption and with a low power supply voltage, the traditional operational amplifier can not meet the requirements of the large input common-mode range and the wide output swing under a low voltage. The rail-to-rail operational amplifier can meet these requirements. But the trans -conductance of the traditionalrail-to-rail operational amplifier is not constant. A 1.5 V low-power CMOS rail-to-rail operational amplifier is designed in this paper. A minimum current selection circuit is adopted in the input stage to achieve constant-g_m so that the trans-conductance is not independent of the ideal square

  15. A multi-mode operation control strategy for flexible microgrid based on sliding-mode direct voltage and hierarchical controls.

    Science.gov (United States)

    Zhang, Qinjin; Liu, Yancheng; Zhao, Youtao; Wang, Ning

    2016-03-01

    Multi-mode operation and transient stability are two problems that significantly affect flexible microgrid (MG). This paper proposes a multi-mode operation control strategy for flexible MG based on a three-layer hierarchical structure. The proposed structure is composed of autonomous, cooperative, and scheduling controllers. Autonomous controller is utilized to control the performance of the single micro-source inverter. An adaptive sliding-mode direct voltage loop and an improved droop power loop based on virtual negative impedance are presented respectively to enhance the system disturbance-rejection performance and the power sharing accuracy. Cooperative controller, which is composed of secondary voltage/frequency control and phase synchronization control, is designed to eliminate the voltage/frequency deviations produced by the autonomous controller and prepare for grid connection. Scheduling controller manages the power flow between the MG and the grid. The MG with the improved hierarchical control scheme can achieve seamless transitions from islanded to grid-connected mode and have a good transient performance. In addition the presented work can also optimize the power quality issues and improve the load power sharing accuracy between parallel VSIs. Finally, the transient performance and effectiveness of the proposed control scheme are evaluated by theoretical analysis and simulation results.

  16. Low-power operation using self-timed circuits and adaptive scaling of the supply voltage

    DEFF Research Database (Denmark)

    Nielsen, Lars Skovby; Niessen, C.; Sparsø, Jens

    1994-01-01

    Recent research has demonstrated that for certain types of applications like sampled audio systems, self-timed circuits can achieve very low power consumption, because unused circuit parts automatically turn into a stand-by mode. Additional savings may be obtained by combining the self...... of voltage scaling has been used previously in synchronous circuits, and the contributions of the present paper are: 1) the combination of supply scaling and self-timed circuitry which has some unique advantages, and 2) the thorough analysis of the power savings that are possible using this technique.>......-timed circuits with a mechanism that adaptively adjusts the supply voltage to the smallest possible, while maintaining the performance requirements. This paper describes such a mechanism, analyzes the possible power savings, and presents a demonstrator chip that has been fabricated and tested. The idea...

  17. Design of an Asymmetrical Doherty Power Amplifier Based on the Knee Voltage Effect%基于膝点电压效应的非对称Doherty功率放大器

    Institute of Scientific and Technical Information of China (English)

    张晗; 唐宗熙; 王滨; 王学科

    2012-01-01

    According to the technology of Doherty, an advanced high efficiency power amplifier for the downside frequency band of wide and code division multiple access (W-CDMA) is introduced. During the designing process, the knee voltage effect was taken into account and through crippling the effect, the efficiency of back-off area boost dramatically. In addition, the proposed amplifier maintains perfect efficiency and acceptable linearity over a wider range by employing the uneven input power driver. In order to prove the theoretical analysis, a Doherty power amplifier ( DPA) employing Freescale' s laterally diffused metal oxide semiconductor field effect transistor ( LDMOS FET) MRF6S21050 with 100 W peak envelope power (PEP) was designed and realized finally. The measurements show that the proposed DPA exhibits a power-added efficiency (PAE) of 40. 05% at 6 dB output power back-off and 27. 88% at 9 dB output power back off, which improve about 3. 4% and 4. 2% , respectively compared to that of the conventional one. The proposed power amplifier can be applied to the wireless communication.%根据Doherty技术,设计了一款工作于宽带码分多址信号(W-CDMA)下行频段的改进型高效率功率放大器.在设计过程中,将功放管的膝点电压效应考虑在内并通过减小此效应来提升回退点效率,此外,通过不对称功率输入的设计使得整个功放在更宽的功率范围内保持高效率并获得良好的线性度.为了证明文中的理论分析,采用飞思卡尔公司的LDMOSFET功放管MRF6S21050,最终设计并实现了峰值功率输出(PEP)为100 W的Doherty功率放大器(DPA),测试结果显示,该放大器在回退6 dB和9 dB处的功率附加效率(PAE)分别为40.5%和27.88%,比传统的Doherty功率放大器改善了约3.4%和4.2%.此功率放大器可应用于无线通信领域.

  18. Low-Voltage Ride-Through Operation of Power Converters in Grid-Interactive Microgrids by Using Negative-Sequence Droop Control

    DEFF Research Database (Denmark)

    Zhao, Xin; Guerrero, Josep M.; Savaghebi, Mehdi;

    2017-01-01

    support the grid voltage, make profits, and also ride-through the voltage dip during the whole fault period. A two layer hierarchical control strategy is proposed in this paper. The primary controller consists of voltage and current inner loops, a conventional droop control and a virtual impedance loop......Due to the increasing penetration level of microgrids (MGs), it becomes a critical issue for MGs to help sustaining power system stability. Therefore, ancillary services, such as the low-voltage ride-through (LVRT) capability should be incorporated in MGs in order to guarantee stable operation...

  19. Design and Construction of Low Cost High Voltage dc Power Supply for Constant Power Operation

    Science.gov (United States)

    Kumar, N. S.; Jayasankar, V.

    2013-06-01

    Pulsed load applications like laser based systems need high voltage dc power supplies with better regulation characteristics. This paper presents the design, construction and testing of dc power supply with 1 kV output at 300 W power level. The designed converter has half bridge switched mode power supply (SMPS) configuration with 20 kHz switching. The paper covers the design of half bridge inverter, closed loop control, High frequency transformer and other related electronics. The designed power supply incorporates a low cost OPAMP based feedback controller which is designed using small signal modelling of the converter. The designed converter was constructed and found to work satisfactorily as per the specifications.

  20. Engineering Diffusivity, Band gap and Operating Voltage in Lithium Iron Phosphate through transition metal doping

    OpenAIRE

    Jena, Ajit; Nanda, B. R. K.

    2016-01-01

    Density functional calculations are carried out to understand and tailor the electrochemical profile diffusivity, band gap and open circuit voltage of transition metal doped olivine phosphate LiFe_{1-x}M_{x}PO_{4} (M = V, Cr, Mn, Co and Ni). Diffusion and hence the ionic conductivity is studied by calculating the activation barrier, V_{act}, experienced by the diffusing Li^{+} ion. We show that the effect of dopants on diffusion is both site dependent and short ranged and thereby it paves way...

  1. Note: Repetitive operation of the capacitor bank of the low-voltage miniature plasma focus at 50 Hz

    Science.gov (United States)

    Shukla, Rohit; Shyam, Anurag

    2013-10-01

    We have already reported the low-voltage operation of a plasma focus describing the operation of plasma focus at 4.2 kV which proposes possibility of making a repetitive system using compact driving source. Another recent article describes that the same capacitor-bank can drive the plasma focus for a measured ˜5 × 104 neutrons per shot at 5 kV and 59 kA current. In the present work, repetitive operation of the capacitor-bank of plasma focus is done and that too is being reported at a very high repetition rate of 50 Hz using very simple scheme of charging and triggering the bank. The bank is continuously discharged to burst duration of 20 s in this configuration admeasuring a thousand shots.

  2. Voltage- and current-activated metal–insulator transition in VO2-based electrical switches: a lifetime operation analysis

    Directory of Open Access Journals (Sweden)

    Aurelian Crunteanu, Julien Givernaud, Jonathan Leroy, David Mardivirin, Corinne Champeaux, Jean-Christophe Orlianges, Alain Catherinot and Pierre Blondy

    2010-01-01

    Full Text Available Vanadium dioxide is an intensively studied material that undergoes a temperature-induced metal–insulator phase transition accompanied by a large change in electrical resistivity. Electrical switches based on this material show promising properties in terms of speed and broadband operation. The exploration of the failure behavior and reliability of such devices is very important in view of their integration in practical electronic circuits. We performed systematic lifetime investigations of two-terminal switches based on the electrical activation of the metal–insulator transition in VO2 thin films. The devices were integrated in coplanar microwave waveguides (CPWs in series configuration. We detected the evolution of a 10 GHz microwave signal transmitted through the CPW, modulated by the activation of the VO2 switches in both voltage- and current-controlled modes. We demonstrated enhanced lifetime operation of current-controlled VO2-based switching (more than 260 million cycles without failure compared with the voltage-activated mode (breakdown at around 16 million activation cycles. The evolution of the electrical self-oscillations of a VO2-based switch induced in the current-operated mode is a subtle indicator of the material properties modification and can be used to monitor its behavior under various external stresses in sensor applications.

  3. Free-Electron Laser Operation and Self-Amplified Spontaneous Emission Using a Step-Tapered Undulator

    NARCIS (Netherlands)

    Jaroszynski, D. A.; Prazeres, R.; Glotin, F.; Ortega, J. M.; Oepts, D.; van der Meer, A. F. G.; Knippels, G.; van Amersfoort, P. W.

    1995-01-01

    We present an experimental and theoretical evaluation of a new method of enhancing the efficiency and gain of the free-electron laser (FEL) and observations of self-amplified spontaneous emission at start-up of the step-tapered FEL. The stepped undulator is divided into two uniform sections of

  4. Schottky bipolar I-MOS: An I-MOS with Schottky electrodes and an open-base BJT configuration for reduced operating voltage

    Science.gov (United States)

    Kannan, N.; Kumar, M. Jagadesh

    2017-04-01

    In this paper, we have proposed a novel impact ionization MOS (I-MOS) structure, called the Schottky bipolar I-MOS, with Schottky source and drain electrodes and utilizing the open-base bipolar junction transistor (BJT) configuration for achieving reduction in the operating voltage of the I-MOS transistor. We report, using 2-D simulations, a low operating voltage (∼1.1 V) and a low subthreshold swing (∼3.6 mV/Decade). For the corresponding p-i-n I-MOS, the operating voltage is ∼5.5 V. The operating voltage of the Schottky bipolar I-MOS is the lowest reported operating voltage for silicon based I-MOS transistors. The nearly 80% reduction in the operating voltage of the Schottky bipolar I-MOS makes it suitable for applications requiring low operating voltages. The Schottky bipolar I-MOS is also expected to have an improved reliability over the p-i-n I-MOS since high energy carriers, induced by impact ionization near the drain, do not have to pass under the gate region in the channel. The use of Schottky contacts instead of heavily doped source and drain regions and the low channel doping level reduces the required thermal budget for device fabrication. The low operating voltage, low subthreshold swing and possibly improved reliability of the Schottky bipolar I-MOS, makes it a potential solution for applications where steep subthreshold slope transistors are being explored as alternative to the conventional MOS transistor.

  5. Operating Circuit Fault Diagnosis of High Voltage Circuit Breaker%高压断路器操作回路的故障诊断

    Institute of Scientific and Technical Information of China (English)

    赵红宇; 龙树峰

    2015-01-01

    This paper analyzes and studies the fault diagnosis operation requirements of high voltage circuit breaker operation circuit and the fault diagnosis method of high voltage circuit breaker.%本文对高压断路器操作回路的故障诊断操作要求和高压断路器操作回路的故障诊断方法进行了分析和研究。

  6. Electronic amplifiers for automatic compensators

    CERN Document Server

    Polonnikov, D Ye

    1965-01-01

    Electronic Amplifiers for Automatic Compensators presents the design and operation of electronic amplifiers for use in automatic control and measuring systems. This book is composed of eight chapters that consider the problems of constructing input and output circuits of amplifiers, suppression of interference and ensuring high sensitivity.This work begins with a survey of the operating principles of electronic amplifiers in automatic compensator systems. The succeeding chapters deal with circuit selection and the calculation and determination of the principal characteristics of amplifiers, as

  7. The Calculation of Unbalanced Voltage on the tertiary bus of a single phase auto transformer in case of Parallel Operation with Different Manufacturer

    Energy Technology Data Exchange (ETDEWEB)

    Shim, E.B.; Woo, J.W.; Kwak, J.S. [Korea Electric Power Research Institute (Korea); Joe, S.H.; Hur, Y.H. [KEPCO (Korea); Han, S.O. [Chungnam University (Korea)

    2001-07-01

    This paper described the unbalanced voltage on the tertiary bus of a single phase auto transformer in the case of parallel operation with different manufacturer at each phase. The unbalanced capacitances between primary to secondary winding, secondary to tertiary winding and primary to tertiary winding makes unbalanced bus voltage in the tertiary bus side. The unbalanced voltage let the surge arrester to operate in the power frequency range, and it causes the arrester to burn out. The failure of the arrester at one phase makes line to ground fault, which lead to the surge arrester failure of the other two phase on the tertiary bus. (author). 3 refs., 10 figs., 2 tabs.

  8. Photonic-Band-Gap Traveling-Wave Gyrotron Amplifier

    Science.gov (United States)

    Nanni, E. A.; Lewis, S. M.; Shapiro, M. A.; Griffin, R. G.; Temkin, R. J.

    2014-01-01

    We report the experimental demonstration of a gyrotron traveling-wave-tube amplifier at 250 GHz that uses a photonic band gap (PBG) interaction circuit. The gyrotron amplifier achieved a peak small signal gain of 38 dB and 45 W output power at 247.7 GHz with an instantaneous −3 dB bandwidth of 0.4 GHz. The amplifier can be tuned for operation from 245–256 GHz. The widest instantaneous −3 dB bandwidth of 4.5 GHz centered at 253.25 GHz was observed with a gain of 24 dB. The PBG circuit provides stability from oscillations by supporting the propagation of transverse electric (TE) modes in a narrow range of frequencies, allowing for the confinement of the operating TE03-like mode while rejecting the excitation of oscillations at nearby frequencies. This experiment achieved the highest frequency of operation for a gyrotron amplifier; at present, there are no other amplifiers in this frequency range that are capable of producing either high gain or high output power. This result represents the highest gain observed above 94 GHz and the highest output power achieved above 140 GHz by any conventional-voltage vacuum electron device based amplifier. PMID:24476286

  9. The effect of applied control strategy on the current-voltage correlation of a solid oxide fuel cell stack during dynamic operation

    Directory of Open Access Journals (Sweden)

    Szmyd Janusz S.

    2014-09-01

    Full Text Available This paper discusses the transient characteristics of the planar type SOFC cell stack, of which the standard output is 300 W. The transient response of the voltage to the manipulation of an electric current was investigated. The effects of the response and of the operating condition determined by the operating temperature of the stack were studied by mapping a current-voltage (I-V correlation. The current-based fuel control (CBFC was adopted for keeping the fuel utilization factor at constant while the value of the electric current was ramped at the constant rate. The present experimental study shows that the transient characteristics of the cell voltage are determined by primarily the operating temperature caused by the manipulation of the current. Particularly, the slope of the I-V curve and the overshoot found on the voltage was remarkably influenced by the operating temperature. The different values of the fuel utilization factor influence the height of the settled voltages. The CBFC has significance in determining the slope of the I-V characteristic, but the different values ofthe fuel utilization factor does not affect the slope as the operating temperature does. The CBFC essentially does not alter the amplitude of the overshoot on the voltage response, since this is dominated by the operating temperature and its change is caused by manipulating the current.

  10. Empirical Verification of Fault Models for FPGAs Operating in the Subcritical Voltage Region

    DEFF Research Database (Denmark)

    Birklykke, Alex Aaen; Koch, Peter; Prasad, Ramjee

    2013-01-01

    fault models might provide insight that would allow subcritical scaling by changing digital design practices or by simply accepting errors if possible. To facilitate further work in this direction, we present probabilistic error models that allow us to link error behavior with statistical properties...... of the binary signals, and based on a two-FPGA setup we experimentally verify the correctness of candidate models. For all experiments, the observed error rates exhibit a polynomial dependency on outcome probability of the binary inputs, which corresponds to the behavior predicted by the proposed timing error...... model. Furthermore, our results show that the fault mechanism is fully deterministic - mimicking temporary stuck-at errors. As a result, given knowledge about a given signal, errors are fully predictable in the subcritical voltage region....

  11. A Carbon Nanotube-based NEMS Parametric Amplifier for Enhanced Radio Wave Detection and Electronic Signal Amplification

    Energy Technology Data Exchange (ETDEWEB)

    Aleman, B J; Sussman, A; Zettl, A [Physics Department, University of California, Berkeley, CA 94720 (United States); Mickelson, W, E-mail: azettl@berkeley.edu [Center of Integrated Nanomechanical Systems, University of California, Berkeley, CA 94720 (United States)

    2011-07-20

    We propose a scheme for a parametric amplifier based on a single suspended carbon nanotube field-emitter. This novel electromechanical nanotube device acts as a phase-sensitive, variable-gain, band-pass-filtering amplifier for electronic signal processing and, at the same time, can operate as a variable-sensitivity, tuneable detector and transducer of radio frequency electromagnetic waves. The amplifier can exhibit infinite gain at pumping voltages much less than 10 Volts. Additionally, the amplifier's low overhead power consumption (10-1000 nW) make it exceptionally attractive for ultra-low-power applications.

  12. 负阻负载和复制运放增益增强技术相结合的低电压低功耗高增益端到端输出范围运算放大器%A 1V,156.7μW,65.9dB Rail-to-Rail Operational Amplifier by Means of Negative Resistance Load and Replica-Amplifier Gain Enhancement

    Institute of Scientific and Technical Information of China (English)

    刘爱荣; 杨华中

    2006-01-01

    A low-voltage,low-power,and high-gain rail-to-rail operational amplifier(OpAmp)is presented.The replica-amplifier gain enhancement technique is applied to improve the DC gain of the amplifier,which does not degrade the output swing and is very suitable for low-voltage applications.In a 0.18μm standard CMOS process,a 1V OpAmp with rail-to-rail output is designed.For a load capacitance of 5 pF,simulation by HSPICE shows that this OpAmp achieves an effective open-loop DC gain of 65.9dB,gain bandwidth of 70.28 MHz,and phase margin of 50° with a quiescent power dissipation of 156.7μW.%设计了一种低电压低功耗高增益端到端运算放大器.为了提高运放的直流增益,采用了复制运放增益增强技术,这种技术的特点是在提高增益的同时不影响输出摆幅,非常适合低电压场合.该运放采用0.18μm标准CMOS工艺,工作电压为1V.仿真结果表明,在5pF负载电容下所获得运放的直流增益达到65.9dB,增益带宽积为70.28MHz,相位裕度为50°,静态功耗为156.7μW.

  13. Extended-gate-type IGZO electric-double-layer TFT immunosensor with high sensitivity and low operation voltage

    Science.gov (United States)

    Liang, Lingyan; Zhang, Shengnan; Wu, Weihua; Zhu, Liqiang; Xiao, Hui; Liu, Yanghui; Zhang, Hongliang; Javaid, Kashif; Cao, Hongtao

    2016-10-01

    An immunosensor is proposed based on the indium-gallium-zinc-oxide (IGZO) electric-double-layer thin-film transistor (EDL TFT) with a separating extended gate. The IGZO EDL TFT has a field-effect mobility of 24.5 cm2 V-1 s-1 and an operation voltage less than 1.5 V. The sensors exhibit the linear current response to label-free target immune molecule in the concentrations ranging from 1.6 to 368 × 10-15 g/ml with a detection limit of 1.6 × 10-15 g/ml (0.01 fM) under an ultralow operation voltage of 0.5 V. The IGZO TFT component demonstrates a consecutive assay stability and recyclability due to the unique structure with the separating extended gate. With the excellent electrical properties and the potential for plug-in-card-type multifunctional sensing, extended-gate-type IGZO EDL TFTs can be promising candidates for the development of a label-free biosensor for public health applications.

  14. Thermal Optimized Operation of the Single-Phase Full-Bridge PV Inverter under Low Voltage Ride-Through Mode

    DEFF Research Database (Denmark)

    Wang, Huai; Yang, Yongheng; Blaabjerg, Frede

    2013-01-01

    The efficiency of 98% has been reported on transformer-less photovoltaic (PV) inverters and the penetration of grid-connected PV systems is booming as well. In the future, the PV systems are expected to contribute to the grid stability by means of low voltage ride-through operation and grid support....... At the same time, the target of a long service time (25 years or more) imposes new challenges to grid-connected transformer-less PV systems. Achieving more reliable PV inverters is of intense interest in recent research. As one of the most critical stresses that induce failures, the thermal stresses...... on the power devices of a single-phase full-bridge PV inverter are analyzed in different operational modes in this paper. The low voltage grid condition is specially taken into account in this paper. The analysis is demonstrated by a 3 kW single-phase full-bridge grid-connected PV system by simulations...

  15. Method of implementing frequency-encoded NOT, OR and NOR logic operations using lithium niobate waveguide and reflecting semiconductor optical amplifiers

    Indian Academy of Sciences (India)

    Sisir Kumar Garai; Sourangshu Mukhopadhyay

    2009-11-01

    Optics has already proved its strong potentiality for the conduction of parallel logic, arithmetic and algebraic operations. In the last few decades several all-optical data processors were proposed. To implement these processors different data encoding/decoding techniques have been reported. In this context, polarization encoding technique, intensity-based encoding technique, tristate and quaternary logic operation, multivalued logic operations, symbolic substitution techniques etc. may be mentioned. Very recently, frequency encoding/decoding technique has drawn interest from the scientific community. Frequency is the fundamental character of any signal; and it remains unaltered in reflection, refraction, absorption etc. during the propagation and transmission of the signal. This is the most important advantage of frequency encoding technique over the conventional encoding techniques. In this communication the authors propose a new scheme for implementing NOT, OR and NOR logic operations. For this purpose co-propagating beams having different frequencies in C-band (1535–1560 nm) have been used for generating cascaded sum and difference frequency, exploiting the nonlinear response character of periodically poled LiNbO3 waveguide. The cross-gain modulation property of the semiconductor optical amplifier (SOA) and the wavelength conversion property of the reflecting semiconductor optical amplifiers (RSOA) are exploited here to implement the desired optical logic and arithmetic operations.

  16. BiCMOS operational amplifier with precise and stable dc gain for high-frequency switched capacitor circuits

    Science.gov (United States)

    Baschirotto, A.; Alini, R.; Castello, R.

    1991-07-01

    A novel approach in the design of high-frequency switched capacitor (SC) circuits is presented. It is based on the use of simple and fast amplifiers with low but precisely controlled gain value. The effect of the precisely known and stable opamp gain is compensated for by changing the capacitor values during the synthesis of the SC cell. An example of an opamp with these features and the synthesis of a biquadratic filter based on this approach are given.

  17. High Gain Amplifier with Enhanced Cascoded Compensation

    Directory of Open Access Journals (Sweden)

    J. Lemus-Lopez

    2014-04-01

    Full Text Available A two-stage CMOS operational amplifier with both, gain-boosting and indirect current feedback frequency compensation performed by means of regulated cascode amplifiers, is presented. By using quasi-floating-gate transistors (QFGT the supply requirements, the number of capacitors and the size of the compensation capacitors respect to other Miller schemes are reduced. A prototype was fabricated using a 0.5 μm technology, resulting, for a load of 45 pF and supply voltage of 1.65 V, in open-loop-gain of 129 dB, 23 MHz of gain-bandwidth product, 60o phase margin, 675 μW power consumption and 1% settling time of 28 ns.

  18. Engineering Diffusivity and Operating Voltage in Lithium Iron Phosphate through Transition-Metal Doping

    Science.gov (United States)

    Jena, Ajit; Nanda, B. R. K.

    2017-03-01

    Density-functional calculations are carried out to understand and tailor the electrochemical profile—diffusivity, band gap, and open-circuit voltage—of transition-metal-doped olivine phosphate: LiFe1 -xMxPO4 (M =V , Cr, Mn, Co, and Ni). Diffusion and, hence, the ionic conductivity is studied by calculating the activation barrier Vact experienced by the diffusing Li+ ion. We show that the effect of dopants on diffusion is both site dependent and short ranged, and thereby it paves ways for microscopic control of ionic conductivity via selective dopants in olivine phosphates. Dopants with lower-valence electrons (LVEs) compared to Fe repel the Li+ ion to facilitate its outward diffusion, whereas higher-valence-electron (HVE) dopants attract the Li+ ion to facilitate the inward diffusion. From the electronic structure calculation, we establish that irrespective of the dopant M , except Mn, the band gap is reduced since the M d states always lie within the pure band gap. Atomically localized d states of HVE dopants lie above the Fermi energy and that of LVE lie below it. Half-filled Mn d states undergo a large spin-exchange split to bury the dopant states in the valence and conduction bands of the pristine system, and, in turn, the band gap remains unchanged in LiFe1 -xMnxPO4 . Baring Mn, the open-circuit voltage increases with HVE dopants and decreases with LVE dopants.

  19. A novel bioelectrochemical BOD sensor operating with voltage input.

    Science.gov (United States)

    Modin, Oskar; Wilén, Britt-Marie

    2012-11-15

    Biochemical oxygen demand (BOD) is a measure of biodegradable compounds in water and is, for example, a common parameter to design and assess the performance of wastewater treatment plants. The conventional method to measure BOD is time consuming (5 or 7 days) and requires trained personnel. Bioelectrochemical BOD sensors designed as microbial fuel cells (MFCs), which are systems where bacteria convert organic matter into an electrical current, have emerged as an alternative to the conventional technique. In this study, a new type of bioelectrochemical BOD sensor with features that overcome some of the limitations of current MFC-type designs was developed: (1) An external voltage was applied to overcome internal resistances and allow bacteria to generate current at their full capacity, and (2) the ion exchange membrane was omitted to avoid pH shifts that would otherwise limit the applicability of the sensor for wastewaters with low alkalinity. The sensor was calibrated with an aerated nutrient medium containing acetate as the BOD source. Linear correlation (R(2) = 0.97) with charge was obtained for BOD concentrations ranging from 32 to 1280 mg/L in a reaction time of 20 h. Lowering the reaction time to 5 h resulted in lowering the measurable BOD concentration range to 320 mg/L (R(2) = 0.99). Propionate, glucose, and ethanol could also be analyzed by the sensor that was acclimated to acetate. The study demonstrates a way to design more robust and simple bioelectrochemical BOD sensors that do not suffer from the usual limitations of MFCs (high internal resistance and pH shifts).

  20. Investigation of Low Discharge Voltage Hall Thruster Operating Modes and Ionization Processes

    Science.gov (United States)

    2009-08-14

    a null-type, inverted pendulum thrust stand based on the NASA GRC design.11 The thruster is shown mounted to the thrust stand in Figure 3... cloud of neutral propellant. This thruster operation was studied in detail using the far-field diagnostics and characterized with variations in

  1. K+-Na+ ion-exchanged sodium magnesium aluminum germanate glass waveguide amplifier operating in the first telecommunications window

    Science.gov (United States)

    Yang, Dianlai; Zhang, Jie; Pun, Edwin Yue-Bun; Lin, Hai

    2010-12-01

    Potassium-sodium (K+-Na+) ion-exchanged multimode channel waveguide amplifiers have been fabricated based on Tm3+/Yb3+ codoped sodium magnesium aluminum germanate (NMAG) glass substrates. The normalized optical and relative gain coefficients of a 2.20 cm long device were identified to be 3.65 dB/cm and 1.58 dB/cm, respectively, at a signal wavelength of 810 nm under 457 mW 980 nm laser diode excitation. These are the highest values reported, and the results indicate that Tm3+/Yb3+ codoped NMAG glasses are an attractive material for optical amplification in the first telecommunications window.

  2. A CAD investigation of metal-overhang on multiple guard ring design for high voltage operation of Si sensors

    Science.gov (United States)

    Bhardwaj, Ashutosh; Ranjan, Kirti; Namrata; Chatterji, Sudeep; Srivastava, Ajay K.; Shivpuri, R. K.

    2002-12-01

    The extension of Si detectors to the next generation high-energy physics experiments such as large hadron collider implies a reliable operation in high radiation environment which is by far the main technological challenge for these detectors. Multiple field limiting ring systems are well established as a means of protecting diffused junction from high voltage premature breakdown. Also, a spread of the Al metallization over the inter-cathodic field oxide sensibly lowers the electric field at the junction edges, thus, allowing for higher breakdown voltages. The purpose of this work is to combine the positive aspects of these two termination techniques with the aim of defining layouts and technological solutions suitable for the use of Si detectors in adverse radiation environment. An important feature is the potential distribution in the multi-guard ring structure, which depends on the bulk doping concentration, the oxide charge, the size of the gap between guard rings and the metal-overhang design. A systematic investigation on the breakdown performance is done by varying the physical and geometrical parameters such as width of overhang, guard ring spacing, junction depth and oxide charge. CAD tools are used for evaluating potential and electric field distributions within the device.

  3. Current and Voltage Conveyors in Current- and Voltage-Mode Precision Full-Wave Rectifiers

    Directory of Open Access Journals (Sweden)

    J. Koton

    2011-04-01

    Full Text Available In this paper new versatile precision full-wave rectifiers using current and/or voltage conveyors as active elements and two diodes are presented. The performance of these circuit solutions is analysed and compared to the opamp based precision rectifier. To analyze the behavior of the functional blocks, the frequency dependent RMS error and DC transient value are evaluated for different values of input voltage amplitudes. Furthermore, experimental results are given that show the feasibilities of the conveyor based rectifiers superior to the corresponding operational amplifier based topology.

  4. Rabi oscillations and self-induced transparency in InAs/InP quantum dot semiconductor optical amplifier operating at room temperature.

    Science.gov (United States)

    Karni, Ouri; Capua, Amir; Eisenstein, Gadi; Sichkovskyi, Vitalii; Ivanov, Vitalii; Reithmaier, Johann Peter

    2013-11-04

    We report direct observations of Rabi oscillations and self-induced transparency in a quantum dot optical amplifier operating at room temperature. The experiments make use of pulses whose durations are shorter than the coherence time which are characterized using Cross-Frequency-Resolved Optical Gating. A numerical model which solves the Maxwell and Schrödinger equations and accounts for the inhomogeneously broadened nature of the quantum dot gain medium confirms the experimental results. The model is also used to explain the relationship between the observability of Rabi oscillations, the pulse duration and the homogeneous and inhomogeneous spectral widths of the semiconductor.

  5. Mixed voltage VLSI design

    Science.gov (United States)

    Panwar, Ramesh; Rennels, David; Alkalaj, Leon

    1993-01-01

    A technique for minimizing the power dissipated in a Very Large Scale Integration (VLSI) chip by lowering the operating voltage without any significant penalty in the chip throughput even though low voltage operation results in slower circuits. Since the overall throughput of a VLSI chip depends on the speed of the critical path(s) in the chip, it may be possible to sustain the throughput rates attained at higher voltages by operating the circuits in the critical path(s) with a high voltage while operating the other circuits with a lower voltage to minimize the power dissipation. The interface between the gates which operate at different voltages is crucial for low power dissipation since the interface may possibly have high static current dissipation thus negating the gains of the low voltage operation. The design of a voltage level translator which does the interface between the low voltage and high voltage circuits without any significant static dissipation is presented. Then, the results of the mixed voltage design using a greedy algorithm on three chips for various operating voltages are presented.

  6. Performance, high voltage operation and radiation hardness of full-size ATLAS charge division silicon detectors with LHC electronics

    Science.gov (United States)

    Allport, P. P.; Booth, P. S. L.; Carter, J. R.; Goodrick, M. J.; Green, C.; Greenall, A.; Hanlon, M.; Hill, J. C.; Jackson, J. N.; Jones, T. J.; Martí i García, S.; Munday, D. J.; Murray, W.; Richardson, J. D.; Robinson, D.; Sheridan, A. E.; Smith, N. A.; Tyndel, M.; Wyllie, K.

    1998-02-01

    ATLAS silicon detectors designed for charge division read-out were produced during 1995 and have been extensively studied both in the laboratory and test beam at the CERN SPS. Data have been taken with the analogue read-out FELIX-128 chip and studies simulating other read-out architectures under consideration by ATLAS have been performed. To evaluate survival in the harsh environment of the LHC, detectors have been tested to high voltage, both before and after radiation damage by protons exceeding the expected charged hadron dose after 10 years of LHC operation. These tests have all employed analogue read-out to be sensitive to changes in noise and charge collection efficiency as a function of the detector damage.

  7. A novel biological activity of praziquantel requiring voltage-operated Ca2+ channel beta subunits: subversion of flatworm regenerative polarity.

    Directory of Open Access Journals (Sweden)

    Taisaku Nogi

    Full Text Available BACKGROUND: Approximately 200 million people worldwide harbour parasitic flatworm infections that cause schistosomiasis. A single drug-praziquantel (PZQ-has served as the mainstay pharmacotherapy for schistosome infections since the 1980s. However, the relevant in vivo target(s of praziquantel remain undefined. METHODS AND FINDINGS: Here, we provide fresh perspective on the molecular basis of praziquantel efficacy in vivo consequent to the discovery of a remarkable action of PZQ on regeneration in a species of free-living flatworm (Dugesia japonica. Specifically, PZQ caused a robust (100% penetrance and complete duplication of the entire anterior-posterior axis during flatworm regeneration to yield two-headed organisms with duplicated, integrated central nervous and organ systems. Exploiting this phenotype as a readout for proteins impacting praziquantel efficacy, we demonstrate that PZQ-evoked bipolarity was selectively ablated by in vivo RNAi of voltage-operated calcium channel (VOCC beta subunits, but not by knockdown of a VOCC alpha subunit. At higher doses of PZQ, knockdown of VOCC beta subunits also conferred resistance to PZQ in lethality assays. CONCLUSIONS: This study identifies a new biological activity of the antischistosomal drug praziquantel on regenerative polarity in a species of free-living flatworm. Ablation of the bipolar regenerative phenotype evoked by PZQ via in vivo RNAi of VOCC beta subunits provides the first genetic evidence implicating a molecular target crucial for in vivo PZQ activity and supports the 'VOCC hypothesis' of PZQ efficacy. Further, in terms of regenerative biology and Ca(2+ signaling, these data highlight a novel role for voltage-operated Ca(2+ entry in regulating in vivo stem cell differentiation and regenerative patterning.

  8. Continuous wave operation of distributed feedback quantum cascade lasers with low threshold voltage and low power consumption

    Science.gov (United States)

    Xie, Feng; Caneau, Catherine; LeBlanc, Herve P.; Coleman, Sean; Hughes, Lawrence C.; Zah, Chung-en

    2012-03-01

    We demonstrated the room temperature continuous wave (CW) operation of mid-infrared distributed feedback (DFB) quantum cascade lasers (QCLs) made of strain balanced GaInAs/AlInAs material on InP substrates for sensing CO2 isotope and N2O gas for potential applications that need battery powered portable devices in a sensor network. For the former device at 4.35 μm wavelength, we demonstrated a low threshold voltage of less than 8 V for battery operation and a near circular far field pattern with small divergent angles of 33 by 28 degrees full width at half maximum (FWHM) in vertical and horizontal directions, respectively, for easy collimation. For the latter device at 4.5 μm wavelength, we demonstrated a low CW threshold power consumption of 0.7 W at 20 °C. A side mode suppression ratio (SMSR) of 30 dB was achieved within the whole operating current and temperature ranges for both lasers.

  9. General Consideration of Measuring System for Operational Test of Thyristor Valves of Ultra High Voltage DC Power Transmission

    Institute of Scientific and Technical Information of China (English)

    ZHOU Hui-gao; XU Fan; ZHANG Chang-chun; HU Zhi-long; LIU Pu; HUANG Xi-dong; WAN Gan; DING Qian

    2011-01-01

    Thyristor valve is one of the key equipments for ultra high voltage direct current (UHVDC)power transmission projects.Before being installed on site,they need to be tested in a laboratory in order to verify their operational performance to satisfy the technical specification of project related.Test facilities for operational tests of thyristor valves are supposed to enable to undertake more severe electrical stresses than those being applied in the thyristor valves under test (test objects).On the other hand,the stresses applied into the test objects are neither higher nor lower than specified by the specification,because inappropriate stresses applied would result in incorrect evaluation of performance on the test objects,more seriously,would cuase the damage of test objects with expensive cost losing.Generally,the process of operational tests is complicated and performed in a complex synthetic test circuit(hereafter as STC),where there are a lot of sensors used for measuring,monitoring and protection on line to ensure that the test circuit functions in good condition.Therefore,the measuring systems embedded play a core role in STC,acting like "eyes".Based on the first project of building up a STC in China,experience of planning measuring systems is summarized so as to be referenced by related engineers.

  10. Low-power low-voltage superior-order curvature corrected voltage reference

    Science.gov (United States)

    Popa, Cosmin

    2010-06-01

    A complementary metal oxide semiconductor (CMOS) voltage reference with a logarithmic curvature-correction will be presented. The first-order compensation is realised using an original offset voltage follower (OVF) block as a proportional to absolute temperature (PTAT) voltage generator, with the advantages of reducing the silicon area and of increasing accuracy by replacing matched resistors with matched transistors. The new logarithmic curvature-correction technique will be implemented using an asymmetric differential amplifier (ADA) block for compensating the logarithmic temperature dependent term from the first-order compensated voltage reference. In order to increase the circuit accuracy, an original temperature-dependent current generator will be designed for computing the exact type of the implemented curvature-correction. The relatively small complexity of the current squarer allows an important increasing of the circuit accuracy that could be achieved by increasing the current generator complexity. As a result of operating most of the MOS transistors in weak inversion, the original proposed voltage reference could be valuable for low-power applications. The circuit is implemented in 0.35 μm CMOS technology and consumes only 60μA for t = 25°C, being supplied at the minimal supply voltage V DD = 1.75V. The temperature coefficient of the reference voltage is 8.7 ppm/°C, while the line sensitivity is 0.75 mV/V for a supply voltage between 1.75 V and 7 V.

  11. On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

    OpenAIRE

    Masaharu Kobayashi; Toshiro Hiramoto

    2016-01-01

    Internet-of-Things (IoT) technologies require a new energy-efficient transistor which operates at ultralow voltage and ultralow power for sensor node devices employing energy-harvesting techniques as power supply. In this paper, a practical device design guideline for low voltage operation of steep-slope negative-capacitance field-effect-transistors (NCFETs) operating at sub-0.2V supply voltage is investigated regarding operation speed, material requirement and energy efficiency in the case o...

  12. An LMS Programming Scheme and Floating-Gate Technology Enabled Trimmer-Less and Low Voltage Flame Detection Sensor

    Science.gov (United States)

    Iglesias-Rojas, Juan Carlos; Gomez-Castañeda, Felipe; Moreno-Cadenas, Jose Antonio

    2017-01-01

    In this paper, a Least Mean Square (LMS) programming scheme is used to set the offset voltage of two operational amplifiers that were built using floating-gate transistors, enabling a 0.95 VRMS trimmer-less flame detection sensor. The programming scheme is capable of setting the offset voltage over a wide range of values by means of electron injection. The flame detection sensor consists of two programmable offset operational amplifiers; the first amplifier serves as a 26 μV offset voltage follower, whereas the second amplifier acts as a programmable trimmer-less voltage comparator. Both amplifiers form the proposed sensor, whose principle of functionality is based on the detection of the electrical changes produced by the flame ionization. The experimental results show that it is possible to measure the presence of a flame accurately after programming the amplifiers with a maximum of 35 LMS-algorithm iterations. Current commercial flame detectors are mainly used in absorption refrigerators and large industrial gas heaters, where a high voltage AC source and several mechanical trimmings are used in order to accurately measure the presence of the flame. PMID:28613250

  13. An LMS Programming Scheme and Floating-Gate Technology Enabled Trimmer-Less and Low Voltage Flame Detection Sensor.

    Science.gov (United States)

    Iglesias-Rojas, Juan Carlos; Gomez-Castañeda, Felipe; Moreno-Cadenas, Jose Antonio

    2017-06-14

    In this paper, a Least Mean Square (LMS) programming scheme is used to set the offset voltage of two operational amplifiers that were built using floating-gate transistors, enabling a 0.95 VRMS trimmer-less flame detection sensor. The programming scheme is capable of setting the offset voltage over a wide range of values by means of electron injection. The flame detection sensor consists of two programmable offset operational amplifiers; the first amplifier serves as a 26 μV offset voltage follower, whereas the second amplifier acts as a programmable trimmer-less voltage comparator. Both amplifiers form the proposed sensor, whose principle of functionality is based on the detection of the electrical changes produced by the flame ionization. The experimental results show that it is possible to measure the presence of a flame accurately after programming the amplifiers with a maximum of 35 LMS-algorithm iterations. Current commercial flame detectors are mainly used in absorption refrigerators and large industrial gas heaters, where a high voltage AC source and several mechanical trimmings are used in order to accurately measure the presence of the flame.

  14. Efficient Power Amplifier for Motor Control

    Science.gov (United States)

    Brown, R. J.

    1986-01-01

    Pulse-width-modulated amplifier supplies high current as efficiently as low current needed for starting and running motor. Key to efficiency of motor-control amplifier is V-channel metal-oxide/semiconductor transistor Q1. Device has low saturation resistance. However, has large gate input capacitance and small margin between its turn-on voltage and maximum allowable gate-to-source voltage. Circuits for output stages overcome limitations of VMOS device.

  15. A digitally assisted, signal folding neural recording amplifier.

    Science.gov (United States)

    Chen, Yi; Basu, Arindam; Liu, Lei; Zou, Xiaodan; Rajkumar, Ramamoorthy; Dawe, Gavin Stewart; Je, Minkyu

    2014-08-01

    A novel signal folding and reconstruction scheme for neural recording applications that exploits the 1/f(n) characteristics of neural signals is described in this paper. The amplified output is 'folded' into a predefined range of voltages by using comparison and reset circuits along with the core amplifier. After this output signal is digitized and transmitted, a reconstruction algorithm can be applied in the digital domain to recover the amplified signal from the folded waveform. This scheme enables the use of an analog-to-digital convertor with less number of bits for the same effective dynamic range. It also reduces the transmission data rate of the recording chip. Both of these features allow power and area savings at the system level. Other advantages of the proposed topology are increased reliability due to the removal of pseudo-resistors, lower harmonic distortion and low-voltage operation. An analysis of the reconstruction error introduced by this scheme is presented along with a behavioral model to provide a quick estimate of the post reconstruction dynamic range. Measurement results from two different core amplifier designs in 65 nm and 180 nm CMOS processes are presented to prove the generality of the proposed scheme in the neural recording applications. Operating from a 1 V power supply, the amplifier in 180 nm CMOS has a gain of 54.2 dB, bandwidth of 5.7 kHz, input referred noise of 3.8 μVrms and power dissipation of 2.52 μW leading to a NEF of 3.1 in spike band. It exhibits a dynamic range of 66 dB and maximum SNDR of 43 dB in LFP band. It also reduces system level power (by reducing the number of bits in the ADC by 2) as well as data rate to 80% of a conventional design. In vivo measurements validate the ability of this amplifier to simultaneously record spike and LFP signals.

  16. 嵌套式斩波运放的分析与设计%Analysis and Design of Nested Chopper Operational Amplifier

    Institute of Scientific and Technical Information of China (English)

    张锗源; 杨发顺; 杨法明; 张荣芬; 邓朝勇

    2012-01-01

    A nested chopper operational amplifier was designed to solve the problem of large residual offset in traditional chopper amplifiers. Simulation with Spectre based on SMIC 0. 18 μm CMOS process showed that the circuit had an open loop gain of 78. 3 dB and a CMMR up to 112 dB. With chopper frequency /chophigh = 10 kHz and fchoplow=500 Hz, the single chopper and nested chopper opamp were simulated, respectively, using non-matched chopper switch. Results indicated that the nested chopper was helpful to reduce residual offset The nested chopper opamp is suitable for processing weak signal with low bandwidth, such as front-end readout circuit in sensors and audio signal amplifier circuit.%针对传统的斩波运放具有大残余失调的特点,设计了一个嵌套式斩波运放.基于SMIC0.18μm工艺,通过Spectre仿真工具进行验证与仿真,运放的开环增益达到78.3 dB,共模抑制比达到112 dB.在斩波频率fchophigh=10 kHz、fchoplow=500 Hz的条件下,通过使用非匹配斩波开关,分别对单斩波和嵌套式斩波运放进行仿真.结果表明,嵌套式斩波技术能有效减小残余失调的影响.适用于带宽较低的微弱信号检测与处理电路,如传感器前端读出电路和音频信号放大电路等.

  17. Electrospun amplified fiber optics.

    Science.gov (United States)

    Morello, Giovanni; Camposeo, Andrea; Moffa, Maria; Pisignano, Dario

    2015-03-11

    All-optical signal processing is the focus of much research aiming to obtain effective alternatives to existing data transmission platforms. Amplification of light in fiber optics, such as in Erbium-doped fiber amplifiers, is especially important for efficient signal transmission. However, the complex fabrication methods involving high-temperature processes performed in a highly pure environment slow the fabrication process and make amplified components expensive with respect to an ideal, high-throughput, room temperature production. Here, we report on near-infrared polymer fiber amplifiers working over a band of ∼20 nm. The fibers are cheap, spun with a process entirely carried out at room temperature, and shown to have amplified spontaneous emission with good gain coefficients and low levels of optical losses (a few cm(-1)). The amplification process is favored by high fiber quality and low self-absorption. The found performance metrics appear to be suitable for short-distance operations, and the large variety of commercially available doping dyes might allow for effective multiwavelength operations by electrospun amplified fiber optics.

  18. Six-step Voltage Control of PM Brushless AC Motors under High Speed Flux-weakening Operation for EV/HEV Applications

    Institute of Scientific and Technical Information of China (English)

    诸自强

    2008-01-01

    The torque-speed characteristics of brushless motor having an interior permanent magnet rotor and a sinusoidalback-emf waveform are compared experimentally when it is operated in brushless AC (BLAC) mode and brushless DC(BLDC) modes with both 2-phase, 120° conduction (BLDC-120) and 3-phase,180° conduction (BLDC-180).Particularemphasis is on high-speed,six-step voltage controlled,flux-weakening operation.h is shown that for EV/HEV applications,even for interior PM brushless motors which have sinusoidal back-emf waveforms,in order to achieve maximum torque perampere capability over wide operation speed range,it is advantageous to employ a hybrid operation mode-BLAC operationin the constant torque region and six-step voltage control (BLDC-180 operation, together with current phase control) inthe flux-weakening region.

  19. Design and implementation of a wireless (Bluetooth) four channel bio-instrumentation amplifier and digital data acquisition device with user-selectable gain, frequency, and driven reference.

    Science.gov (United States)

    Cosmanescu, Alin; Miller, Benjamin; Magno, Terence; Ahmed, Assad; Kremenic, Ian

    2006-01-01

    A portable, multi-purpose Bio-instrumentation Amplifier and Data AcQuisition device (BADAQ) capable of measuring and transmitting EMG and EKG signals wirelessly via Bluetooth is designed and implemented. Common topologies for instrumentation amplifiers and filters are used and realized with commercially available, low-voltage, high precision operational amplifiers. An 8-bit PIC microcontroller performs 10-bit analog-to-digital conversion of the amplified and filtered signals and controls a Bluetooth transceiver capable of wirelessly transmitting the data to any Bluetooth enabled device. Electrical isolation between patient/subject, circuitry, and ancillary equipment is achieved by optocoupling components. The design focuses on simplicity, portability, and affordability.

  20. Reduced operating voltage and grey-to-grey response time in a vertically aligned liquid crystal display using a mixture of two polyimide alignment materials

    Science.gov (United States)

    Lee, Ji-Hoon; Choi, Young Eun; Lee, Jun Hee; Lee, Byeong Hoon; Song, Won Il; Jeong, Kwang-Un; Lee, Gi-Dong; Lee, Seung Hee

    2013-12-01

    We proposed a method to reduce the operating voltage and the grey-to-grey switching time of a vertically aligned liquid crystal display using a mixture of planar and vertical polyimide alignment materials. The surface anchoring energy of the two-polyimide mixture was smaller than that of the pure vertical polyimide and consequently, liquid crystal molecules were easily switched to a planar state with an electric field, resulting in a greater maximum retardation than that of the pure polyimide at the same applied voltage. Rising time was also significantly reduced due to the suppressed optical bouncing effect in the mixed planar polyimide, and the decaying time showed negligible change. With the proposed approach, we can reduce the cell gap to obtain half-wave retardation allowing for faster response time while keeping a low operating voltage.

  1. Semiconductor laser amplifier and its optoelectronic properties for application in lightwave communication systems

    Science.gov (United States)

    Luc, V. V.; Eliseev, Petr G.; Man'ko, M. A.; Tsotsoriya, M. V.

    1992-12-01

    Output power and fiber-to-fiber gain along with infernal gain of the active element and optoelectronic signal curves at different values of input power versus pumping current are measured for the amplifier modules on the base of AR-coated InGaAsP/InP BH diodes. It is shown that diagnostics of the amplifier module oper''ation regime may be performed by voltage measurements and the optoelectronic signal can be used to monitor optical information passage in the regenerator device or for the distributed access the data transmitted in the lightwave comrnunicat ion systems. I.

  2. A Transformer Class E Amplifier

    Directory of Open Access Journals (Sweden)

    Mikolajewski Miroslaw

    2014-12-01

    Full Text Available In a high-efficiency Class E ZVS resonant amplifier a matching and isolation transformer can replace some or even all inductive components of the amplifier thus simplifying the circuit and reducing its cost. In the paper a theoretical analysis, a design example and its experimental verification for a transformer Class E amplifier are presented. In the experimental amplifier with a transformer as the only inductive component in the circuit high efficiency ηMAX = 0.95 was achieved for supply voltage VI = 36 V, maximum output power POMAX = 100 W and the switching frequency f = 300 kHz. Measured parameters and waveforms showed a good agreement with theoretical predictions. Moreover, the relative bandwidth of the switching frequency was only 19% to obtain output power control from 4.8 W to POMAX with efficiency not less than 0.9 in the regulation range.

  3. Prototype Small Footprint Amplifier for Piezoelectric Deformable Mirrors

    Science.gov (United States)

    Caputa, Kris; Herriot, Glen; Niebergal, Joel; Zielinski, Adam

    2011-09-01

    AO subsystems of the ELT observatories will incorporate deformable mirrors with an order of magnitude larger number of piezoelectric actuators than the AO systems currently deployed. Simply scaling up the drive electronics that are presently available commercially would substantially drive up the AO cost, pose unacceptably high demands for the supply power and heat dissipation, and occupy large physical volume. We have set out to prototype a high voltage amplifier that is compact enough to allow packaging 100 amplifier channels on a single 6U Eurocard with the goal to have a DM drive channel density of 1200 per 6U VME crate. Individual amplifier circuits should be driven by a multichannel A/D converter, consume no more than 0.5W from the +/-400V power supply, be slew rate limited in hardware, and be short-circuit protected. The component cost should be an order of magnitude less than the integrated circuit high voltage amplifiers currently on the market. We started out with modeling candidate circuits in SPICE, then built physical prototypes using inexpensive off the shelf components. In this paper we present experimental results of exposing several prototype circuits to both normal operating conditions and foreseeable fault conditions. The performance is evaluated against the AO requirements for the output range and bandwidth and the DM actuator safety requirements.

  4. Golli Myelin Basic Proteins Modulate Voltage-Operated Ca(++) Influx and Development in Cortical and Hippocampal Neurons.

    Science.gov (United States)

    Vt, Cheli; DA, Santiago González; V, Spreuer; V, Handley; At, Campagnoni; Pm, Paez

    2016-10-01

    The golli proteins, products of the myelin basic protein gene, are widely expressed in oligodendrocyte progenitor cells and neurons during the postnatal development of the brain. While golli appears to be important for oligodendrocyte migration and differentiation, its function in neuronal development is completely unknown. We have found that golli proteins function as new and novel modulators of voltage-operated Ca(++) channels (VOCCs) in neurons. In vitro, golli knock-out (KO) neurons exhibit decreased Ca(++) influx after plasma membrane depolarization and a substantial maturational delay. Increased expression of golli proteins enhances L-type Ca(++) entry and processes outgrowth in cortical neurons, and pharmacological activation of L-type Ca(++) channels stimulates maturation and prevents cell death in golli-KO neurons. In situ, Ca(++) influx mediated by L-type VOCCs was significantly decreased in cortical and hippocampal neurons of the golli-KO brain. These Ca(++) alterations affect cortical and hippocampal development and the proliferation and survival of neural progenitor cells during the postnatal development of the golli-KO brain. The CA1/3 sections and the dentate gyrus of the hippocampus were reduced in the golli-KO mice as well as the density of dendrites in the somatosensory cortex. Furthermore, the golli-KO mice display abnormal behavior including deficits in episodic memory and reduced anxiety. Because of the expression of the golli proteins within neurons in learning and memory centers of the brain, this work has profound implication in neurodegenerative diseases and neurological disorders.

  5. Test setup for accelerated test of high power IGBT modules with online monitoring of Vce and Vf voltage during converter operation

    DEFF Research Database (Denmark)

    de Vega, Angel Ruiz; Ghimire, Pramod; Pedersen, Kristian Bonderup;

    2014-01-01

    of the device in real application. The hypothesis is that ageing of power modules closer to real environment including cooling system, full dc-link voltage and continuous PWM operation could lead to more accurate study of failure mechanism. A new type of test setup is proposed, which can create different real...

  6. Operation Manual of the high voltage generator of the Pelletron electron accelerator; Manual de operacion del generador de alto voltaje del acelerador de electrones Pelletron

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez M, V.; Lopez V, H.; Alba P, U

    1988-04-15

    The first version of a manual to operate the generator of high voltage generator of the Pelletron electron accelerator built in the ININ is presented. Since this generator has several components and/or elements, the one manual present has the purpose that the armed one or maintenance of anyone on its parts, is carried out in an orderly and efficient way. (Author)

  7. DC power flow control for radial offshore multi-terminal HVDC transmission system by considering steady-state DC voltage operation range

    DEFF Research Database (Denmark)

    Irnawan, Roni; Silva, Filipe Miguel Faria da; Bak, Claus Leth

    2017-01-01

    of this MTDC system due to the inherited limit from point-to-point (PtP) configuration. An analytic method is proposed in order to estimate the steady-state DC voltage operational points of this MTDC system. The proposed method has been confirmed with a conventional DC power flow study result....

  8. Low drop-out voltage regulator as a candidate topology for photovoltaic solar facilities

    OpenAIRE

    Martínez García, Herminio

    2015-01-01

    This article aims to present the design of a 4.5-V, 450-mA low drop-out (LDO) voltage linear regulator based on a two-stage cascoded operational transconductance amplifier (OTA) as error amplifier for photovoltaic solar DC-DC regulation. The aforementioned two-stage OTA is designed with cascoded current mirroring technique to boost up the output impedance. The proposed OTA has a DC gain of 101 dB under no load condition. The designed reference voltage included in the LDO regulator is provi...

  9. Learning and evolution in bacterial taxis: an operational amplifier circuit modeling the computational dynamics of the prokaryotic 'two component system' protein network.

    Science.gov (United States)

    Di Paola, Vieri; Marijuán, Pedro C; Lahoz-Beltra, Rafael

    2004-01-01

    Adaptive behavior in unicellular organisms (i.e., bacteria) depends on highly organized networks of proteins governing purposefully the myriad of molecular processes occurring within the cellular system. For instance, bacteria are able to explore the environment within which they develop by utilizing the motility of their flagellar system as well as a sophisticated biochemical navigation system that samples the environmental conditions surrounding the cell, searching for nutrients or moving away from toxic substances or dangerous physical conditions. In this paper we discuss how proteins of the intervening signal transduction network could be modeled as artificial neurons, simulating the dynamical aspects of the bacterial taxis. The model is based on the assumption that, in some important aspects, proteins can be considered as processing elements or McCulloch-Pitts artificial neurons that transfer and process information from the bacterium's membrane surface to the flagellar motor. This simulation of bacterial taxis has been carried out on a hardware realization of a McCulloch-Pitts artificial neuron using an operational amplifier. Based on the behavior of the operational amplifier we produce a model of the interaction between CheY and FliM, elements of the prokaryotic two component system controlling chemotaxis, as well as a simulation of learning and evolution processes in bacterial taxis. On the one side, our simulation results indicate that, computationally, these protein 'switches' are similar to McCulloch-Pitts artificial neurons, suggesting a bridge between evolution and learning in dynamical systems at cellular and molecular levels and the evolutive hardware approach. On the other side, important protein 'tactilizing' properties are not tapped by the model, and this suggests further complexity steps to explore in the approach to biological molecular computing.

  10. Integrating Multi-Domain Distributed Energy Systems with Electric Vehicle PQ Flexibility: Optimal Design and Operation Scheduling for Sustainable Low-Voltage Distribution Grids

    DEFF Research Database (Denmark)

    Morvaj, Boran; Knezovic, Katarina; Evins, Ralph

    2016-01-01

    for minimising carbon emission in low-voltage distribution grids with high share of distributed energy resources and electric vehicles. The framework determines optimal EV flexibility usage (both active and reactive) while satisfying electric and thermal building demands, and maintaining the distribution grid...... in the stable operation. The model was applied to a real low-voltage Danish distribution grid where measurement data is available on hourly basis in order to determine EV flexibility impacts on carbon emissions, as well as the benefits of optimal DES design. The influence of EV reactive power control...

  11. Low bias stress and reduced operating voltage in SnCl{sub 2}Pc based n-type organic field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Obaidulla, SK. Md., E-mail: obaidulla20@gmail.com; Goswami, D. K., E-mail: xdipak@gmail.com, E-mail: dipak@phy.iitkgp.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati, Assam 781039 (India); Giri, P. K., E-mail: giri@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati, Assam 781039 (India); Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati, Assam 781039 (India)

    2014-05-26

    Vacuum deposited tin (IV) phthalocyanine dichloride (SnCl{sub 2}Pc) field-effect transistors were fabricated on polymethylmethacrylate/aluminum oxide (PMMA/Al{sub 2}O{sub 3}) bilayer gate dielectric, with reduced operating voltage and low contact resistance. The devices with top contact Ag electrodes exhibit excellent n-channel behavior with electron mobility values of 0.01 cm{sup 2}/Vs, low threshold voltages ∼4 V, current on/off ratio ∼10{sup 4} with an operating voltage of 10 V. Bias stress instability effects are investigated during long term operation using thin film devices under vacuum. We find that the amount of bias stress of SnCl{sub 2}Pc based thin film transistor is extremely small with characteristic relaxation time >10{sup 5} s obtained using stretched exponential model. Stressing the SnCl{sub 2}Pc devices by applying 10 V to the gate for half an hour results in a decrease of the source drain current, I{sub DS} of only ∼10% under low vacuum. These devices show highly stable electrical behavior under multiple scans and low threshold voltage instability under electrical dc bias stress (V{sub DS} = V{sub GS} = 10 V, for 2 h) even after 40 days.

  12. Series-Tuned High Efficiency RF-Power Amplifiers

    DEFF Research Database (Denmark)

    Vidkjær, Jens

    2008-01-01

    An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits.......An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits....

  13. 微电网动态电压恢复器运行模式研究%Research on Operation Modes of Dynamic Voltage Restorer in Microgrid

    Institute of Scientific and Technical Information of China (English)

    成瑞芬; 韩肖清; 王鹏; 秦文萍; 张东霞

    2013-01-01

    针对微电网中存在的电压质量问题,提出了基于光蓄发电单元的动态电压恢复器(dynamic voltage restorer,DVR).DVR以光蓄发电单元为储能单元,通过整流器串联接入到低压配电网与微电网公共连接处.提出了DVR的动态电压恢复方式、不间断供电方式和微电源方式的3种运行模式.通过对系统开关信号进行合理控制,实现3种模式的有效切换,提高DVR设备的利用率.DVR的动态电压恢复方式可有效抑制电压暂降或骤升,改善微电网电压质量;不间断供电方式可提高对负荷的供电可靠性;微电源方式可以减少主网的电能供给,实现节能减排.算例结果验证了DVR的有效性.%In allusion to dissatisfied voltage quality of microgrid,a dynamic voltage restorer (DVR) based on photovoltaic (PV) generation/battery units is proposed.Utilizing PV generation/battery units as energy storage component and via rectifier,the proposed DVR is connected in series with the point of common coupling (PCC),where the microgrid low-voltage is connected to distribution network.Three operating modes of DVR,namely the dynamic voltage restoration mode,the uninterruptible power supply mode and the micro-source mode,are put forward.Through reasonably control strategy,the switching-over among the three operation modes can be effectively implemented to improve the utilization rate of DVR.The dynamic voltage restoration mode of DVR can suppress voltage sag and voltage swell effectively,thus the voltage quality is improved; the uninterruptible power supply mode can improve the reliability of power supply; using the micro-source mode,the power supply from power grid can be reduced and it is favorable for energy conservation and emission reduction.The effectiveness of the proposed DVR is verified by results of simulation based on Matlab/Simulink.

  14. Log amplifier with pole-zero compensation

    Science.gov (United States)

    Brookshier, William

    1987-01-01

    A logarithmic amplifier circuit provides pole-zero compensation for improved stability and response time over 6-8 decades of input signal frequency. The amplifier circuit includes a first operational amplifier with a first feedback loop which includes a second, inverting operational amplifier in a second feedback loop. The compensated output signal is provided by the second operational amplifier with the log elements, i.e., resistors, and the compensating capacitors in each of the feedback loops having equal values so that each break point or pole is offset by a compensating break point or zero.

  15. A Three-Stage Operational Amplifier for a Wide Range of Capacitive Loads%适合宽范围电容负载的三级运放

    Institute of Scientific and Technical Information of China (English)

    胡晶晶; Huijsing J H; 任俊彦

    2007-01-01

    This paper presents a three-stage CMOS operational amplifier(opamp)that combines accuracy withstability for a wide range of capacitive loads.A so-called quenching capacitor is added to a multipath nested Miller compensation(MNMC)topology to obtain stability for a wide range of capacitive loads.Theoretical analysis and mathematical formulas are provided to prove the improvement in stability.A prototype of this frequency compensation scheme is implemented in a 0.7μm CMOS process.Measurements show that the amplifier can drive capacitive loads ranging from 100pF to 100μF with a gain of 90dB and a minimum phase margin of 26°The amplifier has a unity-gain bandwidth of 1MHz for a 100pF capacitive load.It employs a quenching capacitance of 18pF.%结合精确度和稳定性的要求提出了一种适合宽范围电容负载的CMOS运放.在多径嵌套式密勒补偿结构中加入一个抑制电容得到适合各种电容负载的稳定性.为了证实稳定性的提高对该结构进行了理论分析并计算得出数学表达式.基于这种新的频率补偿结构,利用CMOS 0.7μm工艺模型设计了样品芯片.测试结果表明:该运放可以驱动从100pF到100μF负载电容,直流增益为90dB,最小相位裕度为26°;该运放在100pF负载情况下单位增益带宽为1MHz,使用抑制电容仅为18pF.

  16. Analysis of capacitive effect and life estimation of hydrodynamic journal bearings on repeated starts and stops of a machine operating under the influence of shaft voltages

    Science.gov (United States)

    Prashad, Har; Rao, K. N.

    1994-07-01

    A theoretical analysis has been carried out to study the capacitive effect and life estimation of hydrodynamic journal bearings on repeated starts and stops of a machine operating under the influence of shaft voltages. The analysis gives the time required for the charge accumulation and increase of charge with time on the liner surface of a journal bearing based on bearing capacitance, resistance of film thickness, and the shaft voltage. Also, it investigates the effect of gradual leakage of the accumulated charges with time as the shaft voltage falls when the power supply to the machine is switched off. This paper gives an approach to determine the ratio of the number of shaft revolutions required for charge accumulation and gradual discharge of the accumulated charges on the liner surface of a bearing depending on bearing-to-shaft voltage. Also, the number of repeated starts and stops before initiation of craters on the liner surface of a hydrodynamic journal bearing is established to restrict deterioration and damage of the liner. The diagnosis has the potential to study the transient effect of the shaft voltages on a journal bearing during the start and stop cycle of a machine.

  17. A 0.8V, 7μA, rail-to-rail input/output, constant Gm operational amplifier in standard digital 0.18μm CMOS

    DEFF Research Database (Denmark)

    Citakovic, J; Nielsen, I. Riis; Nielsen, Jannik Hammel

    2005-01-01

    A two-stage amplifier, operational at 0.8V and drawing 7μA, has been integrated in a standard digital 0.18μm CMOS process. Rail-to-rail operations at the input are enabled by complementary transistor pairs with gm control. The efficient rail-to-rail output stage is biased in class AB. The measured...... DC gain of the amplifier is 75dB, and the unity-gain frequency is 870kHz with a 12pF, 100kΩload. Both input and output stage transistors are biased in weak inversion....

  18. Low voltage bandgap reference with closed loop curvature compensation

    Science.gov (United States)

    Tao, Fan; Bo, Du; Zheng, Zhang; Guoshun, Yuan

    2009-03-01

    A new low-voltage CMOS bandgap reference (BGR) that achieves high temperature stability is proposed. It feeds back the output voltage to the curvature compensation circuit that constitutes a closed loop circuit to cancel the logarithmic term of voltage VBE. Meanwhile a low voltage amplifier with the 0.5 μm low threshold technology is designed for the BGR. A high temperature stability BGR circuit is fabricated in the CSMC 0.5 μm CMOS technology. The measured result shows that the BGR can operate down to 1 V, while the temperature coefficient and line regulation are only 9 ppm/°C and 1.2 mV/V, respectively.

  19. The transfer voltage standard for calibration outside of a laboratory

    Directory of Open Access Journals (Sweden)

    Urekar Marjan

    2017-01-01

    Full Text Available The transfer voltage standard is designed for transferring the analog voltage from a calibrator to the process control workstation for multi-electrode electrolysis process in a plating plant. Transfer voltage standard is based on polypropylene capacitors and operational amplifiers with tera-ohm range input resistance needed for capacitor self-discharging effect cancellation. Dielectric absorption effect is described. An instrument for comparison of reference and control voltages is devised, based on precise window comparator. Detailed description of the main task is given, including constraints, theoretical and practical solutions. Procedure for usage of the standard outside of a laboratory conditions is explained. Comparison of expected and realized standard characteristics is given. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. TR-32019

  20. Low voltage bandgap reference with closed loop curvature compensation

    Institute of Scientific and Technical Information of China (English)

    Fan Tao; Du Bo; Zhang Zheng; Yuan Guoshun

    2009-01-01

    A new low-voltage CMOS bandgap reference (BGR) that achieves high temperature stability is proposed. It feeds back the output voltage to the curvature compensation circuit that constitutes a closed loop circuit to cancel the logarithmic term of voltage VBE. Meanwhile a low voltage amplifier with the 0.5μm low threshold technology is designed for the BGR. A high temperature stability BGR circuit is fabricated in the CSMC 0.5μm CMOS tech-nology. The measured result shows that the BGR can operate down to 1 V, while the temperature coefficient and line regulation are only 9 ppm/℃ and 1.2 mV/V, respectively.

  1. Spatial Power Combining Amplifier for Ground and Flight Applications

    Science.gov (United States)

    Velazco, J. E.; Taylor, M.

    2016-11-01

    Vacuum-tube amplifiers such as klystrons and traveling-wave tubes are the workhorses of high-power microwave radiation generation. At JPL, vacuum tubes are extensively used in ground and flight missions for radar and communications. Vacuum tubes use electron beams as the source of energy to achieve microwave power amplification. Such electron beams operate at high kinetic energies and thus require high voltages to function. In addition, vacuum tubes use compact cavity and waveguide structures that hold very intense radio frequency (RF) fields inside. As the operational frequency is increased, the dimensions of these RF structures become increasingly smaller. As power levels and operational frequencies are increased, the highly intense RF fields inside of the tubes' structures tend to arc and create RF breakdown. In the case of very high-power klystrons, electron interception - also known as body current - can produce thermal runaway of the cavities that could lead to the destruction of the tube. The high voltages needed to power vacuum tubes tend to require complicated and cumbersome power supplies. Consequently, although vacuum tubes provide unmatched high-power microwaves, they tend to arc, suffer from thermal issues, and require failure-prone high-voltage power supplies. In this article, we present a new concept for generating high-power microwaves that we refer to as the Spatial Power Combining Amplifier (SPCA). The SPCA is very compact, requires simpler, lower-voltage power supplies, and uses a unique power-combining scheme wherein power from solid-state amplifiers is coherently combined. It is a two-port amplifier and can be used inline as any conventional two-port amplifier. It can deliver its output power to a coaxial line, a waveguide, a feed, or to any microwave load. A key feature of this new scheme is the use of higher-order-mode microwave structures to spatially divide and combine power. Such higher-order-mode structures have considerably larger cross

  2. Amorphous Strontium Titanate Film as Gate Dielectric for Higher Performance and Low Voltage Operation of Transparent and Flexible Organic Field Effect Transistor.

    Science.gov (United States)

    Yadav, Sarita; Ghosh, Subhasis

    2016-04-27

    We report that the pervoskite material, strontium titanate (STO) can be used as a gate dielectric layer of flexible and low voltage organic field effect transistor (OFET). The crystallinity, dielectric constant, and surface morphology of STO films can be controlled by the engineering of the growth condition. Under optimized growth condition, amorphous films of STO show a much better gate dielectric compared to other gate dielectrics used to date, with very small leakage current density for flexible and low voltage (transistors with amorphous STO gate dielectric show high mobility of 2 cm(2)/(V s), on/off ratio of 10(6), subthreshold swing of 0.3 V/dec and low interface trap density. Similarly excellent performance has been obtained in copper phthalocyanine (CuPc) based OFETs with on/off ratio ∼10(5) and carrier mobility ∼5.9 × 10(-2) cm(2)/(V s). Moreover, the operating voltage (∼5 V) has been reduced by more than one order of magnitude. It has been demonstrated that the low processing temperature of amorphous STO makes it the most suitable gate dielectric for flexible and transparent organic devices to operate under low voltage.

  3. High efficiency class-Ⅰ audio power amplifier using a single adaptive supply

    Institute of Scientific and Technical Information of China (English)

    Peng Zhenfei; Yang Shanshan; Feng Yong; Liu Yang; Hong Zhiliang

    2012-01-01

    A high efficiency class-Ⅰ linear audio power amplifier (PA) with an adaptive supply is presented.Its efficiency is improved by a dynamic supply to reduce the power transistors' voltage drop.A gain compression technique is adopted to make the amplifier accommodate a single positive supply.Circuit complicity and chip area are reduced because no charge pump is necessary for the negative supply.A common shared mode voltage and a symmetric layout pattern are used to minimize the non-linearity.A peak efficiency of 80% is reached at peak output power.The measured THD+N before and after the supply switching point are 0.01% and 0.05%,respectively.The maximum output power is 410 mW for an 8 Ω speaker load.Unlike switching amplifiers,the class-Ⅰ amplifier operates as a linear amplifier and hence has a low EMI.The advantage of a high efficiency and low EMI makes the class-Ⅰ amplifier suitable for portable and RF sensitive applications.

  4. A High-performance Small Signal Amplifier

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    According to questions in the design of high quality small signal amplifier, this paper gave a new-type high performance small signal amplifier. The paper selected the operational amplifier of ICL Company and designed a new-type circuit with simple, low cost and excellent performance.

  5. Remote Acquisition Amplifier For 50-Ohm Cable

    Science.gov (United States)

    Amador, Jose J.

    1995-01-01

    Buffer-amplifier unit designed to drive 50-Ohm cables up to 100 ft. (30 m) long, compensating for attenuation in cables and enabling remote operation of oscilloscopes. Variable resistor provides for adjustment of gain of amplifier, such that overall gain from input terminals of amplifier to output end of cable set to unity.

  6. DTMOS-Based 0.4V Ultra Low-Voltage Low-Power VDTA Design and Its Application to EEG Data Processing

    Directory of Open Access Journals (Sweden)

    A. Uygur

    2013-06-01

    Full Text Available In this paper, an ultra low-voltage, ultra low-power voltage differencing transconductance amplifier (VDTA is proposed. DTMOS (Dynamic Threshold Voltage MOS transistors are employed in the design to effectively use the ultra low supply voltage. The proposed VDTA is composed of two operational transconductance amplifiers operating in the subthreshold region. Using TSMC 0.18µm process technology parameters with symmetric ±0.2V sup¬ply voltage, the total power consumption of the VDTA block is found as just 5.96 nW when the transconductances have 3.3 kHz, 3 dB bandwidth. The proposed VDTA circuit is then used in a fourth-order double-tuned band-pass filter for processing real EEG data measurements. The filter achieves close to 64 dB dynamic range at 2% THD with a total power consumption of 12.7 nW.

  7. A Dynamic Consensus Algorithm based Low-Voltage Ride-Through Operation of Power Converters in Grid-Interactive Microgrids

    DEFF Research Database (Denmark)

    Zhao, Xin; Meng, Lexuan; Savaghebi, Mehdi

    2016-01-01

    of the converters cannot be equally shared if no extra current balancing loop is added. Accordingly, a dynamic consensus algorithm (DCA) based negative/positive sequence current sharing scheme is proposed in this paper. Finally, a lab-scale AC microgrid was designed and tested in the lab to validate the feasibility...... control based voltage support strategy has been proposed to aid MGs riding through three phase asymmetrical voltage sags. However, since the line impedance from each converter to the point of common coupling (PCC) is not identical, both positive sequence and negative sequence output current...

  8. Stable single-mode operation of injection-seeded Q-switched Nd:YAG laser by sine voltage modulation

    Institute of Scientific and Technical Information of China (English)

    Yongfei Gao; Junxuan Zhang; Huaguo Zang; Xiaolei Zhu; Yingjie Yu; Weibiao Chen

    2016-01-01

    Based on the modified ramp and fire technique,a novel injection seeding approach with real-time resonance tracking is successfully demonstrated in a single-frequency Nd:YAG pulsed laser.Appling a high-frequency sinusoidal modulation voltage to one piezo actuator and an adjustable DC voltage to another piezo actuator for active feedback,single-mode laser output with high-frequency stability is obtained,and the effect of the piezo hysteresis on the frequency stability can be eliminated for a laser diode pumped Q-switched Nd:YAG laser at a repetition rate of 400 Hz.

  9. Design techniques for low-voltage analog integrated circuits

    Science.gov (United States)

    Rakús, Matej; Stopjaková, Viera; Arbet, Daniel

    2017-08-01

    In this paper, a review and analysis of different design techniques for (ultra) low-voltage integrated circuits (IC) are performed. This analysis shows that the most suitable design methods for low-voltage analog IC design in a standard CMOS process include techniques using bulk-driven MOS transistors, dynamic threshold MOS transistors and MOS transistors operating in weak or moderate inversion regions. The main advantage of such techniques is that there is no need for any modification of standard CMOS structure or process. Basic circuit building blocks like differential amplifiers or current mirrors designed using these approaches are able to operate with the power supply voltage of 600 mV (or even lower), which is the key feature towards integrated systems for modern portable applications.

  10. Achieving high mobility, low-voltage operating organic field-effect transistor nonvolatile memory by an ultraviolet-ozone treating ferroelectric terpolymer

    Science.gov (United States)

    Xiang, Lanyi; Wang, Wei; Xie, Wenfa

    2016-11-01

    Poly(vinylidene fluoride–trifluoroethylene) has been widely used as a dielectric of the ferroelectric organic field-effect transistor (FE-OFET) nonvolatile memory (NVM). Some critical issues, including low mobility and high operation voltage, existed in these FE-OFET NVMs, should be resolved before considering to their commercial application. In this paper, we demonstrated low-voltage operating FE-OFET NVMs based on a ferroelectric terpolymer poly(vinylidene-fluoride-trifluoroethylene-chlorotrifluoroethylene) [P(VDF-TrFE-CTFE)] owed to its low coercive field. By applying an ultraviolet-ozone (UVO) treatment to modify the surface of P(VDF-TrFE-CTFE) films, the growth model of the pentacene film was changed, which improved the pentacene grain size and the interface morphology of the pentacene/P(VDF-TrFE-CTFE). Thus, the mobility of the FE-OFET was significantly improved. As a result, a high performance FE-OFET NVM, with a high mobility of 0.8 cm2 V‑1 s‑1, large memory window of 15.4~19.2, good memory on/off ratio of 103, the reliable memory endurance over 100 cycles and stable memory retention ability, was achieved at a low operation voltage of ±15 V.

  11. 一款低噪声CMOS运算放大器的改进与设计%Improvement and Design of the Low-Noise CMOS Operational Amplifier

    Institute of Scientific and Technical Information of China (English)

    郭虎

    2012-01-01

    采用台积电(TSMC)0.1gum标准RFCMOS工艺进行仿真验证;改进了器件的噪声模型,给出了在功耗和阻抗匹配条件下噪声性能优化的设计方法。在遵守模拟电路设计的八边形法则的基础上,对参数进行折衷考虑(trade—o国和整体优化处理。仿真结果表明,此运算放大器的各项主要参数均满足预期要求,性能优异。%This paper completes the simulation verification using RF CMOS process of Taiwan Semiconductor Manufacturing (TSMC) 0.18 um standard. It improves the device noise model, proposes the design method of noise performance optimization under the power consumption and impedance matching condition. Abiding by the octagon rule of analog circuit design, all the parameters are made a compromise and optimized. The simulation results show that the key parameters of the operational amplifier meet the expected requirement, and the performance is excellent.

  12. Prediction of Low-Voltage Tetrafluoromethane Emissions Based on the Operating Conditions of an Aluminium Electrolysis Cell

    Science.gov (United States)

    Dion, Lukas; Kiss, László I.; Poncsák, Sándor; Lagacé, Charles-Luc

    2016-09-01

    Greenhouse gas (GHG) generation is inherent in the production of aluminium by a technology that uses carbon anodes. Most of those GHG are composed of CO2 produced by redox reaction that occurs in the cell. However, a significant fraction of the annual GHG production is composed of perfluorocarbons (PFC) resulting from anode effects (AE). Multiple investigations have shown that tetrafluoromethane (CF4) can be generated under low-voltage conditions in the electrolysis cells, without global anode effect. The aim of this paper is to find a quantitative relationship between monitored cell parameters and the emissions of CF4. To achieve this goal, a predictive algorithm has been developed using seven cell indicators. These indicators are based on the cell voltage, the noise level and other parameters calculated from individual anode current monitoring. The predictive algorithm is structured into three different steps. The first two steps give qualitative information while the third one quantitatively describes the expected CF4 concentration at the duct end of the electrolysis cells. Validations after each step are presented and discussed. Finally, a sensitivity analysis was performed to understand the effect of each indicator on the onset of low-voltage PFC emissions. The standard deviation of individual anode currents was found to be the dominant variable. Cell voltage, noise level, and maximum individual anode current also showed a significant correlation with the presence of CF4 in the output gas of an electrolysis cell.

  13. 基于0.5μm CMOS工艺的一款新型BiCMOS集成运算放大器设计%Design of New BiCMOS Integrated Operational Amplifier Based on 0.5 μm CMOS Technology

    Institute of Scientific and Technical Information of China (English)

    赵俊霞; 陆雅明

    2011-01-01

    为了提高运算放大器的驱动能力,依据现有CMOS集成电路生产线,介绍一款新型BiCMOS集成运算放大电路设计,探讨BiCMOS工艺的特点.在S-Edit中进行"BiCMOS运放设计"电路设计,并对其电路各个器件参数进行调整,包括MOS器件的宽长比和电容电阻的值.完成电路设计后,在T-spice中进行电路的瞬态仿真,插入CMOS,PNP和NPN的工艺库,对电路所需的电源电压和输入信号幅度和频率进行设定调整,最终在W-Edit输出波形图.在MCNC 0.5μm工艺平台上完成由MOS、双极型晶体管和电容构成的运算放大器版图设计.根据设计的版图,设计出BiCMOS相应的工艺流程,并提取各光刻工艺的掩模版.%In order to improve the drive capability of operational amplifier, a new circuit of BiCMOS integrated operational amplifier is designed on the basis of available CMOS integrated circuit production line.The technique characteristics of BiCMOS is discussed.The BiCMOS operational amplifier is designed in S-Edit.The parameters of various devices in the circuit is adjusted, including width to length ratio of MOS device and capacitance values of resistors.After the circuit design, the transient simulation is performed in T-spice, and the CMOS, PNP and NPN bipolar technology library are used to set the supply voltage, the amplitude and frequency of the input signal, and then send out the final waveform diagram in W-Edit.The layout design of the operational amplifier composed of MOS, bipolar transistors and capacitors on the MCNC 0.5 μm IC Process Line is completed.According to the designed layout, the corresponding BiCMOS process flows are designed, and the masks of lithography process are extracted.

  14. A CMOS variable gain amplifier for PHENIX electromagnetic calorimeter and RICH energy measurements

    Energy Technology Data Exchange (ETDEWEB)

    Wintenberg, A.L.; Simpson, M.L.; Young, G.R. [Oak Ridge National Lab., TN (United States); Palmer, R.L.; Moscone, C.G.; Jackson, R.G. [Tennessee Univ., Knoxville, TN (United States)

    1996-12-31

    A variable gain amplifier (VGA) has been developed equalizing the gains of integrating amplifier channels used with multiple photomultiplier tubes operating from common high-voltage supplies. The PHENIX lead-scintillator electromagnetic calorimeter will operate in that manner, and gain equalization is needed to preserve the dynamic range of the analog memory and ADC following the integrating amplifier. The VGA is also needed for matching energy channel gains prior to forming analog sums for trigger purposes. The gain of the VGA is variable over a 3:1 range using a 5-bit digital control, and the risetime is held between 15 and 23 ns using switched compensation in the VGA. An additional feature is gated baseline restoration. Details of the design and results from several prototype devices fabricated in 1.2-{mu}m Orbit CMOS are presented.

  15. 3.7 GHz repetition rate operated narrow-bandwidth picosecond pulsed Yb fiber amplifier with an all-fiber multiplier

    Science.gov (United States)

    Wei, K. H.; Wen, R. H.; Guo, Y.

    2016-04-01

    A high power picosecond pulsed Yb fiber amplifier with a pulse repetition rate of 3.7 GHz is experimentally demonstrated. The seed is a gain switched distributed Bragg reflection (DBR) structured laser diode (LD) with a pulse duration of 130 ps and a repetition rate of 460 MHz. The pulse repetition rate is increased to 3.7 GHz by introducing an all-fiber multiplier, which is composed of four 2  ×  2 structured fiber couplers. The multiplied pulse train is amplified to 81 W through two stage Yb fiber amplifiers.

  16. Realization and Operation of Automatic Voltage Control in Dongguan Power Grid%东莞电网自动电压控制的实现与运行

    Institute of Scientific and Technical Information of China (English)

    言宇; 冯林桥

    2015-01-01

    Taking Dongguan power grid for example, this paper introduced the necessity to construct an automatic voltage control (AVC) system and expounded the implement method, control strategy and safety precautions of AVC. After the closed loop was put into operation, the voltage eligibility rate was improved and the power grid loss was reduced, which verifies the effectiveness of AVC function, to make the reactive voltage management of power grid realize safe, stable, high-quality and economic operation.%以东莞电网为例,介绍了建设自动电压控制(AVC)系统的必要性,并阐述了AVC系统实现的方法、控制策略及安全保障措施。经闭环投运,提高了电压合格率,降低了网损,验证了AVC功能的有效性,使电网无功电压管理真正实现了安全、稳定、优质、经济运行。

  17. Wideband pulse amplifier with 8 GHz GBW product in a 0.35 {mu}m CMOS technology for the integrated camera of the Cherenkov Telescope Array

    Energy Technology Data Exchange (ETDEWEB)

    Gascon, D; Sanuy, A; Ribo, M [Dept. AM i Dept.ECM, Institut de Ciencies del Cosmos (ICC), Universitat de Barcelona, Marti i Franques 1, E08028, Barcelona (Spain); Delagnes, E; Glicenstein, J-F [IRFU/DSM/CEA, CE-Saclay, Bat. 141 SEN Saclay, F-91191, Gif-sur-Yvette (France); Sieiro, X [Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, E08028, Barcelona (Spain); Feinstein, F; Vorobiov, S [LPTA, Universite Montpellier II and IN2P3/CNRS, Montpellier (France); Nayman, P; Toussenel, F; Tavernet, J-P; Vincent, P, E-mail: gascon@ecm.ub.es [LPNHE, Universite Paris VI and IN2P3/CNRS, Paris (France)

    2010-12-15

    A fully differential wideband amplifier for the camera of the Cherenkov Telescope Array (CTA) is presented. This amplifier would be part of a new ASIC, developed by the NECTAr collaboration, performing the digitization at 1 GS/s with a dynamic range of 16 bits. Input amplifiers must have a voltage gain up to 20 V/V and a bandwidth of 400 MHz. Being impossible to design a fully differential operational amplifier with an 8 GHz GBW product in a 0.35{mu}m CMOS technology, an alternative implementation based on HF linearised transconductors is explored. Test results show that the required GBW product is achieved, with a linearity error smaller than 1% for a differential output voltage range up to 1 Vpp, and smaller than 3% for 2 Vpp.

  18. 超宽工作电压DC/DC变换器设计%Design of wide operating voltage DC/DC converter

    Institute of Scientific and Technical Information of China (English)

    王大为; 赵瑞杰; 陶学军; 田素立; 李朝锋

    2012-01-01

    Based on the situation of the wide output voltage range of solar photovoltaic power generation systems, a wide operating voltage of the DC / DC converter was designed. To solve the shortcoming of high voltage stress of the power when the switch was off, the voltage regulator tube was Introduced in order to clamp the voltage. To ensure the saturation switch conduction of the MOSFET, a rational circuit was designed to induce the current from the secondary circuit as the MOSFET gate driver. Based on the theoretical analysis, simulation and optimization, a 15 W, 1 000 V /200 V input prototype was designed.The test results show that the converter can work stably tor a long time.%针对太阳能光伏发电系统输出电压较宽的情况,设计了一种超宽工作电压的DC/DC变换器.利用稳压管在开关关断时对电路进行电压钳位,解决了单管反激变换器在高电压输入时电力MOSFET电压应力过高的缺陷.通过合理设计电路并从电路副边引入电流作为MOSFET栅极驱动,可以保证开关管的饱和导通.在理论分析、仿真优化、反复调试的基础上,设计了一款15W、1 000 V/200 V输入的样机.经过测试,此变换器可以长时间稳定工作且转换效率比较高.

  19. An Electronically Tunable Transconductance Amplifier for Use in Auditory Prostheses

    Directory of Open Access Journals (Sweden)

    FARAGO, P.

    2015-11-01

    Full Text Available Low-voltage and low-power trends in analog electronics enable novel features in modern bio-medical devices, such as extensive portability, autonomy and even battery-less operation. One specific example is the cochlear implant (CI, which emulates the physiology of hearing to produce auditory sensations via neural stimulation. Besides low-voltage and low-power operation, a key feature in modern CIs is wide-range programmability of the speech processing parameters. This paper proposes an operational transconductance amplifier (OTA for use in CIs, with wide-range electronic tuning of the transconductance value. The proposed OTA is developed around a cascade of two transconductor stages, making the transconductance dependent on the bias current ratio. A combination of linearization techniques: bulk input, parallel differential pairs and feedback, is used to achieve sufficient linear range for CI speech processing. Wide-range parameter tuning of the speech processing sections is illustrated on a variable gain amplifier, a bandpass Tow-Thomas biquad and an envelope detector. Finally, the complete CI speech processing chain is illustrated. The proposed OTA and its employment in CI analog speech processing are validated on a 350 nm CMOS process.

  20. Operation of High-Voltage Transverse Shock Wave Ferromagnetic Generator in the Open Circuit and Charging Modes

    Science.gov (United States)

    2005-06-01

    FMGs are based on the transverse (when the shock wave propagates across the magnetization vector M) shock demagnetization of Nd2Fe14B hard...generators based on the transverse (when the shock wave propagates across the magnetization vector M) shock wave demagnetization of Nd2Fe14B hard...and photo of a high-voltage transverse FMG are shown in Fig. 1. It contains a hollow hard ferromagnetic cylindrical Nd2Fe14B energy-carrying

  1. Rectifying structure with high voltage operation based on CuBO{sub 2} as an UV photocatalyst

    Energy Technology Data Exchange (ETDEWEB)

    Soylu, M., E-mail: soylum74@yahoo.com [Department of Physics, Faculty of Sciences and Arts, Bingol University, Bingol (Turkey); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Omran, Saad Bin [Department of Physics and Astronomy, College of Science, King Saud University, Riyadh (Saudi Arabia); Yakuphanoglu, F. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Department of Physics, Faculty of Science, Firat University, Elazig 23169 (Turkey)

    2014-12-25

    Highlight: • We have fabricated nanostructured CuBO{sub 2} by spin coating on the p-Si. • CuBO{sub 2}/p-Si diode is a new rectifying structure with photosensing. • The photocurrent in the reverse bias voltage is increased by increasing photo-illumination intensity. • CuBO{sub 2}/p-Si/Al diode is a candidate for producing high tension protection circuit. - Abstract: CuBO{sub 2}/p-Si diode is a new rectifying structure with photosensing, which is a candidate for producing high voltage protection circuit in electronic application. It has been seen that the photocurrent in the reverse bias I–V characteristic is strongly increased by photo-illumination. It is believed that the combination of thin CuBO{sub 2} layer and p-Si will provide high voltage protection level, which does not exist for conventional Si diodes. The capacitance and conductance–voltage characteristics were measured at various frequencies. The results indicate that the electrical parameters of CuBO{sub 2}/p-Si diode are affected by the series resistance and interface states. The optical properties of the CuBO{sub 2} thin film were analyzed by UV–vis–NIR spectrophotometry and FTIR studies. The optical band gap of the CuBO{sub 2} is located in the ultraviolet (UV) range. In this spectral range, the B-O-B bonds and relationship between Cu{sup 2+}–O are confirmed.

  2. The effect of the variable frequency drive of the CNC roll grinding machine on the operation of other devices in low-voltage electrical installation

    Directory of Open Access Journals (Sweden)

    Simić Ninoslav

    2016-01-01

    Full Text Available This paper presents one of the observations that have been collected during the years of testing of electrical installations. A typical case from industrial plant in which are installed loads with variable frequency regulation is analyzed. We propose a simple way by measuring the frequency of the voltage in the objects, to establish the existence of possible irregularities in the operation of the individual units and analyze the influence of the current and voltage signal shape of one load to the work of other loads in the plant. The need for verification of electrical installations immediately upon receipt and installation of electrical equipment is emphasized and the use of the latest standards in the design and selection of equipment, in order to avoid unplanned expenses is recommended.

  3. Investigation of the Effects of Cathode Flow Fraction and Position on the Performance and Operation of the High Voltage Hall Accelerator

    Science.gov (United States)

    Kamhawi, Hani; Huang, Wensheng; Haag, Thomas

    2014-01-01

    The National Aeronautics and Space Administration (NASA) Science Mission Directorate In- Space Propulsion Technology office is sponsoring NASA Glenn Research Center (GRC) to develop a 4 kW-class Hall thruster propulsion system for implementation in NASA science missions. Tests were performed within NASA GRC Vacuum Facility 5 at background pressure levels that were six times lower than what has previously been attained in other vacuum facilities. A study was conducted to assess the impact of varying the cathode-to-anode flow fraction and cathode position on the performance and operational characteristics of the High Voltage Hall Accelerator (HiVHAc) thruster. In addition, the impact of injecting additional xenon propellant in the vicinity of the cathode was also assessed. Cathode-to-anode flow fraction sensitivity tests were performed for power levels between 1.0 and 3.9 kW. It was found that varying the cathode flow fraction from 5 to approximately 10% of the anode flow resulted in the cathode-to-ground voltage becoming more positive. For an operating condition of 3.8 kW and 500 V, varying the cathode position from a distance of closest approach to 600 mm away did not result in any substantial variation in thrust but resulted in the cathode-to-ground changing from -17 to -4 V. The change in the cathode-to-ground voltage along with visual observations indicated a change in how the cathode plume was coupling to the thruster discharge. Finally, the injection of secondary xenon flow in the vicinity of the cathode had an impact similar to increasing the cathode-to-anode flow fraction, where the cathode-to-ground voltage became more positive and discharge current and thrust increased slightly. Future tests of the HiVHAc thruster are planned with a centrally mounted cathode in order to further assess the impact of cathode position on thruster performance.

  4. First operation and drift field performance of a large area double phase LAr Electron Multiplier Time Projection Chamber with an immersed Greinacher high-voltage multiplier

    CERN Document Server

    Badertscher, A; Degunda, U; Epprecht, L; Gendotti, A; Horikawa, S; Knecht, L; Lussi, D; Marchionni, A; Natterer, G; Nguyen, K; Resnati, F; Rubbia, A; Viant, T

    2012-01-01

    We have operated a liquid-argon large-electron-multiplier time-projection chamber (LAr LEM-TPC) with a large active area of 76 $\\times$ 40 cm$^2$ and a drift length of 60 cm. This setup represents the largest chamber ever achieved with this novel detector concept. The chamber is equipped with an immersed built-in cryogenic Greinacher multi-stage high-voltage (HV) multiplier, which, when subjected to an external AC HV of $\\sim$1 kV$_{\\mathrm{pp}}$, statically charges up to a voltage a factor of $\\sim$30 higher inside the LAr vessel, creating a uniform drift field of $\\sim$0.5 kV/cm over the full drift length. This large LAr LEM-TPC was brought into successful operation in the double-phase (liquid-vapor) operation mode and tested during a period of $\\sim$1 month, recording impressive three-dimensional images of very high-quality from cosmic particles traversing or interacting in the sensitive volume. The double phase readout and HV systems achieved stable operation in cryogenic conditions demonstrating their go...

  5. Single-electron differential-amplifier/inverter/non-inverter

    Science.gov (United States)

    Hung, K.-M.; Chen, C.-S.; Lin, T.-W.

    2006-07-01

    This work presents a single-electron differential amplifier (SEDA), inverter, and non-inverter based on the triple single-dopant quantum-dot (TSDQD) configuration, with new structures. The competition between the field-induced and confinement-related shifts in the wavefunction of the quantum dots yields a field-controllable spatial-displacement single-electron transistor. Deeper impurity levels in quantum dots promise a higher operating temperature and higher on/off current ratios. The I- V characteristics of the device, studied using the transfer Hamiltonian approach (THA), show that the ratio of on/off currents is >80 000 and the voltage gain is >4 eV/Ry, where V is the applied voltage.

  6. Predistortion of a Bidirectional Cuk Audio Amplifier

    DEFF Research Database (Denmark)

    Birch, Thomas Hagen; Nielsen, Dennis; Knott, Arnold

    2014-01-01

    using predistortion. This paper suggests linearizing a nonlinear bidirectional Cuk audio amplifier using an analog predistortion approach. A prototype power stage was built and results show that a voltage gain of up to 9 dB and reduction in THD from 6% down to 3% was obtainable using this approach.......Some non-linear amplifier topologies are capable of providing a larger voltage gain than one from a DC source, which could make them suitable for various applications. However, the non-linearities introduce a significant amount of harmonic distortion (THD). Some of this distortion could be reduced...

  7. Fundamentals of RF and microwave transistor amplifiers

    CERN Document Server

    Bahl, Inder J

    2009-01-01

    A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help read

  8. Resistance switching memory operation using the bistability in current-voltage characteristics of GaN/AlN resonant tunneling diodes

    Science.gov (United States)

    Nagase, Masanori; Takahashi, Tokio; Shimizu, Mitsuaki

    2016-10-01

    Resistance switching memory operations using the bistability in the current-voltage (I-V) characteristics of GaN/AlN resonant tunneling diodes (RTDs) were investigated to realize an ultrafast nonvolatile memory operating at a picosecond time scale. Resistance switching memory operations based on electron accumulation due to intersubband transitions and electron release due to tunneling current were demonstrated with high reproducibility at room temperature when the leakage of electrons accumulating in the quantum well from the deep level in the AlN barrier was suppressed. A nonvolatile memory for the processor core in a normally off computing system is expected to be realized using the bistability in the I-V characteristics of GaN/AlN RTDs.

  9. Experimental demonstration of strained Si nanowire GAA n-TFETs and inverter operation with complementary TFET logic at low supply voltages

    Science.gov (United States)

    Luong, G. V.; Strangio, S.; Tiedemannn, A.; Lenk, S.; Trellenkamp, S.; Bourdelle, K. K.; Zhao, Q. T.; Mantl, S.

    2016-01-01

    In this work, strained Si (sSi) nanowire array of n-TFETs with gates all around (GAA) yielding ON-currents of 5 μA/μm at a supply voltage Vdd = 0.5 V are presented. Tilted ion implantation with BF2+ into NiSi2 dopant has been used to form a highly doped pocket for the source to channel tunneling junction. These devices indicate sub-threshold slopes (SS) below 60 mV/dec for Id Common analog device characteristics have been determined at Vdd = 0.5 V resulting in a transconductance gm = 24 μS/μm, transconductance efficiency gm/Id = 23 V-1 and the conductance gd = 0.8 μS/μm normalized to the gate width. Based on the good saturation behavior in the output characteristic, an intrinsic gain of 188 is observed. In addition, we present operation of the first experimental sSi GAA NW C-TFET inverter. In spite of ambipolar behavior, the voltage transfer curves (VTC) indicate wide and constant noise margin levels with steep transitions offering a voltage gain of 25 at Vdd = 1 V.

  10. REGENERATIVE TRANSISTOR AMPLIFIER

    Science.gov (United States)

    Kabell, L.J.

    1958-11-25

    Electrical circults for use in computers and the like are described. particularly a regenerative bistable transistor amplifler which is iurned on by a clock signal when an information signal permits and is turned off by the clock signal. The amplifier porforms the above function with reduced power requirements for the clock signal and circuit operation. The power requirements are reduced in one way by employing transformer coupling which increases the collector circuit efficiency by eliminating the loss of power in the collector load resistor.

  11. Low-operating-voltage polymer thin-film transistors based on poly(3-hexylthiophene) with hafnium oxide as the gate dielectric

    OpenAIRE

    Liu, YR; Deng, LF; Yao, RH; Lai, PT

    2010-01-01

    The effects of hafnium oxide $(hbox{HfO}-{2})$ gate dielectric annealing treatment in oxygen $(hbox{O}-{2})$ and ammonia $(hbox{NH}-{3})$ ambient on the electrical performance of polymer thin-film transistors (PTFTs) based on poly(3-hexylthiophene) are investigated. The PTFTs with $hbox{HfO}-{2}$ gate dielectric and also octadecyltrichlorosilane surface modification, prepared by spin-coating process, exhibit good performance, such as a small threshold voltage of $-$0.5 V and an operating volt...

  12. Digitally Programmable High-Q Voltage Mode Universal Filter

    Directory of Open Access Journals (Sweden)

    D. Singh

    2013-12-01

    Full Text Available A new low-voltage low-power CMOS current feedback amplifier (CFA is presented in this paper. This is used to realize a novel digitally programmable CFA (DPCFA using transistor arrays and MOS switches. The proposed realizations nearly allow rail-to-rail swing capability at all the ports. Class-AB output stage ensures low power dissipation and high current drive capability. The proposed CFA/ DPCFA operates at supply voltage of ±0.75 V and exhibits bandwidth better than 95 MHz. An application of the DPCFA to realize a novel voltage mode high-Q digitally programmable universal filter (UF is given. Performances of all the proposed circuits are verified by PSPICE simulation using TSMC 0.25μm technology parameters.

  13. On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

    National Research Council Canada - National Science Library

    Kobayashi, Masaharu; Hiramoto, Toshiro

    2016-01-01

    Internet-of-Things (IoT) technologies require a new energy-efficient transistor which operates at ultralow voltage and ultralow power for sensor node devices employing energy-harvesting techniques as power supply...

  14. Comparison of Single-Event Transients Induced in an Operational Amplifier (LM124) by Pulsed Laser Light and a Broad Beam of Heavy Ions

    Science.gov (United States)

    Buchner, Steve; McMorrow, Dale; Poivey, Christian; Howard, James, Jr.; Pease, Rom; Savage, Mark; Boulghassoul, Younis; Massengill, Lloyd

    2003-01-01

    A comparison of transients from heavy-ion and pulsed-laser testing shows good agreement for many different voltage configurations. The agreement is illustrated by comparing directly individual transients and plots of transient amplitude versus width.

  15. Current regulators for I/SUP 2/L circuits to be operated from low-voltage power supplies

    DEFF Research Database (Denmark)

    Bruun, Erik; Hansen, Ole

    1980-01-01

    A new bandgap current reference is described which can be used to control the injector current of I/SUP 2/L circuits for supply voltages down to about 1 V. For small currents the total injector current is obtained as a mirror of the reference current. For large injector currents the current control...... is performed by a series regulator which compares the injector current of one I/SUP 2/L gate to the reference current. The described reference current can be adjusted to give a variation with temperature of about 60 ppm/°C over the temperature range -10 to +70°C. However, in some applications a nonzero......, but well controlled temperature coefficient is desired. It is shown how a temperature stable ring oscillator with I/SUP 2/L gates can be constructed by tailoring the temperature dependence of the supply current appropriately....

  16. Multi-pass amplifier architecture for high power laser systems

    Science.gov (United States)

    Manes, Kenneth R; Spaeth, Mary L; Erlandson, Alvin C

    2014-04-01

    A main amplifier system includes a first reflector operable to receive input light through a first aperture and direct the input light along an optical path. The input light is characterized by a first polarization. The main amplifier system also includes a first polarizer operable to reflect light characterized by the first polarization state. The main amplifier system further includes a first and second set of amplifier modules. Each of the first and second set of amplifier modules includes an entrance window, a quarter wave plate, a plurality of amplifier slablets arrayed substantially parallel to each other, and an exit window. The main amplifier system additionally includes a set of mirrors operable to reflect light exiting the first set of amplifier modules to enter the second set of amplifier modules and a second polarizer operable to reflect light characterized by a second polarization state.

  17. Static DC to DC Power Conditioning-Active Ripple Filter, 1 MHZ DC to DC Conversion, and Nonlinear Analysis. Ph.D. Thesis; [voltage regulation and conversion circuitry for spacecraft power supplies

    Science.gov (United States)

    Sander, W. A., III

    1973-01-01

    Dc to dc static power conditioning systems on unmanned spacecraft have as their inputs highly fluctuating dc voltages which they condition to regulated dc voltages. These input voltages may be less than or greater than the desired regulated voltages. The design of two circuits which address specific problems in the design of these power conditioning systems and a nonlinear analysis of one of the circuits are discussed. The first circuit design is for a nondissipative active ripple filter which uses an operational amplifier to amplify and cancel the sensed ripple voltage. A dc to dc converter operating at a switching frequency of 1 MHz is the second circuit discussed. A nonlinear analysis of the type of dc to dc converter utilized in designing the 1 MHz converter is included.

  18. Low-voltage gyrotrons

    Science.gov (United States)

    Glyavin, M. Yu.; Zavolskiy, N. A.; Sedov, A. S.; Nusinovich, G. S.

    2013-03-01

    For a long time, the gyrotrons were primarily developed for electron cyclotron heating and current drive of plasmas in controlled fusion reactors where a multi-megawatt, quasi-continuous millimeter-wave power is required. In addition to this important application, there are other applications (and their number increases with time) which do not require a very high power level, but such issues as the ability to operate at low voltages and have compact devices are very important. For example, gyrotrons are of interest for a dynamic nuclear polarization, which improves the sensitivity of the nuclear magnetic resonance spectroscopy. In this paper, some issues important for operation of gyrotrons driven by low-voltage electron beams are analyzed. An emphasis is made on the efficiency of low-voltage gyrotron operation at the fundamental and higher cyclotron harmonics. These efficiencies calculated with the account for ohmic losses were, first, determined in the framework of the generalized gyrotron theory based on the cold-cavity approximation. Then, more accurate, self-consistent calculations for the fundamental and second harmonic low-voltage sub-THz gyrotron designs were carried out. Results of these calculations are presented and discussed. It is shown that operation of the fundamental and second harmonic gyrotrons with noticeable efficiencies is possible even at voltages as low as 5-10 kV. Even the third harmonic gyrotrons can operate at voltages about 15 kV, albeit with rather low efficiency (1%-2% in the submillimeter wavelength region).

  19. Assessment of duration of the drive operation in the mode of kinetic energy recovery under power supply voltage sags in electrical grids of mechanical engineering enterprises

    Science.gov (United States)

    Shonin, O. B.; Novozhilov, N. G.

    2017-02-01

    Voltage sags in electric grids of mechanical engineering enterprises may lead to disconnection of important power consumers with variable frequency drives from the power grid and further interruption of the production process. The paper considers a sensorless V/f control system of еру induction motor drive under normal conditions and under voltage sags on the basis of a computer model of the drive and derivation of a formula for assessment of possible duration of the drive operation in the mode of controlled recovery of kinetic energy accumulated in rotating mass of the drive. Results of simulations have been used to validate results of calculations of the rotor velocity deceleration made in a closed form obtained from the equation reflecting the balance of torques. It is shown that results of calculations practically coincide with results of simulations in the range up to 5% of the velocity initial value. The proposed formula may be useful for estimation of the duration of the drive operation in the mode of recovery of kinetic energy depending on parameters of the motor and driven mechanisms.

  20. Low Voltage Power Efficient Tunable Shaper Circuit With Rail-To-Rail Output Range for the HYDE Detector at FAIR

    Science.gov (United States)

    Galán, J.; López-Ahumada, R.; Sánchez-Rodríguez, T.; Torralba, A.; Carvajal, R. G.; Martel, I.

    2014-04-01

    This paper presents a low voltage, low power readout front-end system implemented in 130 nm CMOS technology. A conventional architecture that consists of charge sensitive amplifier, pole/zero cancellation and shaper has been used. The work focuses on the design of novel circuit topologies in low voltage environment minimizing the power consumption in modern deep submicron CMOS technologies. An operational amplifier with rail-to-rail output swing that uses a gain boosting technique and class-AB output stage without extra power consumption has been used for the shaper. The circuit combines excellent performances with simplicity of design and suitability for low voltage operation. The system is intended to work with silicon detectors for nuclear physics applications and is optimized to match an input capacitance of 10 pF. The system features a peaking time of 500 ns, a power dissipation of 1.57 mW/channel and an equivalent noise charge of 201 e-.

  1. Analysis of the modal and operational indicators of 110 to 750 kilovolt voltage substations of a power system

    Energy Technology Data Exchange (ETDEWEB)

    Ovseychuk, V.A.; Shesteren, V.Ye.

    1983-01-01

    Studies are conducted using statistical and mathematical methods of the schedules of electrical loads and correlated modal and operational indicators of regional 100 to 750 kilovolt substations (PS) of the country's electric power system (EES). An analysis is conducted of the graphs and correlated modal and operational indicators of step down regional 110 to 750 kilovolt substations and the tendencies in the configuration of the daily schedules and the modal operational indicators are established. Probabilistic and statistical models of the loads of substations are developed. Adequate regression models of the daily schedules of reactive loads of substations are obtained.

  2. Voltage verification unit

    Science.gov (United States)

    Martin, Edward J.

    2008-01-15

    A voltage verification unit and method for determining the absence of potentially dangerous potentials within a power supply enclosure without Mode 2 work is disclosed. With this device and method, a qualified worker, following a relatively simple protocol that involves a function test (hot, cold, hot) of the voltage verification unit before Lock Out/Tag Out and, and once the Lock Out/Tag Out is completed, testing or "trying" by simply reading a display on the voltage verification unit can be accomplished without exposure of the operator to the interior of the voltage supply enclosure. According to a preferred embodiment, the voltage verification unit includes test leads to allow diagnostics with other meters, without the necessity of accessing potentially dangerous bus bars or the like.

  3. Operation of the matrix converter as energy sources link of variable voltage; Operacion del convertidor matricial como enlace de fuentes de energia de voltaje variable

    Energy Technology Data Exchange (ETDEWEB)

    Lozano-Garcia, J. M; Hernandez-Figueroa, M. A; Estrada Garcia, H. J; Martinez-Patino, J [Universidad de Guanajuato, Campus Irapuato-Salamanca, Salamanca, Guanajuato (Mexico)]. E-mails: jm.lozano@ugto.mx; mahf@ugto.mx; hestrada@ugto.mx; jesusmp23@ugto.mx

    2013-03-15

    Renewable energy technologies, as wind turbines, have had a remarkable penetration in power systems worldwide, causing that actual power grids became dependent and vulnerable to the variability of the energy generated by this type of resource. In that sense, power converters provide a crucial function in the performance of the overall electrical system when they are used as links between this type of generators and the power system. In this paper, a matrix converter is proposed as link device, to cope with distorted and variable voltages as the ones found in wind turbines operation where generated voltages are directly dependent on wind's speed. An analysis of its main functional characteristics when it operates subject to distorted input-voltage condition, in order to synthesize a set of output voltages with constant magnitude and frequency and without harmonic distortion, is presented. Numerical simulations and experimental results from a laboratory-scale prototype are presented to validate the converter performance. [Spanish] La gran penetracion que ha tenido la generacion de energia mediante recursos renovables, como los generadores eolicos, en el mercado energetico, han ocasionado que las redes electricas sean mas dependientes y vulnerables a la variabilidad de la energia que se genera con este tipo de recursos. En ese sentido, los convertidores de potencia utilizados como enlace entre este tipo de generadores y el sistema electrico son determinantes en el comportamiento final que se tendra en el sistema electrico. En el presente trabajo se propone la utilizacion del convertidor matricial como dispositivo de enlace y se analizan sus caracteristicas operativas en casos donde se requiere la generacion de senales de voltaje sinusoidales y con valores constantes tanto en magnitud como en frecuencia a partir de senales variables, situacion que se presenta comunmente en los aerogeneradores donde el voltaje generado depende directamente de la velocidad del

  4. A CHI wiggler ubitron amplifier experiment: Wiggler characterization

    Energy Technology Data Exchange (ETDEWEB)

    Taccetti, J.M.; Jackson, R.H.; Freund, H.P. [Naval Research Lab., Washington, DC (United States)] [and others

    1995-12-31

    A 35 GHz CHI (Coaxial Hybrid Iron) wiggler ubitron amplifier experiment is under construction at the Naval Research Laboratory. The CHI wiggler configuration has the potential of generating high wiggler magnetic fields at short periods with excellent beam focusing and transport properties. This makes it a desirable configuration for the generation of high power coherent radiation in relatively compact systems. The CHI wiggler consists of alternating rings of magnetic and non-magnetic materials concentric with a central rod of similar alternating design but shifted along the axis by half a period. Once inserted in a solenoidal magnetic field, the CHI structure deforms the axial field to create a radial field oscillating with the same periodicity as the rings. An annular electron beam is propagated through the coaxial gap where the oscillating radial field imparts an azimuthal wiggle motion. The principal goals of the experiment are to investigate the performance tradeoffs involved in the CHI configuration for high frequency amplifiers operating at low voltages with small wiggler periods. The nominal design parameters are a center frequency of 35 GHz, wiggler period of 0.75 cm, and beam voltage of approximately 150 kV. Calculations have shown an intrinsic (untapered) efficiency of {approximately} 7% when operating at 6.3 kG axial field (wiggler field, B{sub w}{approximately}1270 G). The calculated gain was 36 dB, saturating at a distance of 46 cm. These parameters yield an instantaneous amplifier bandwidth of {approximately} 25%. There appears to be room for further improvement in efficiency, a matter which will be scrutinized more closely in the final design. A prototype CHI wiggler is presently being fabricated for use in conjunction with an existing 30 kG superconducting solenoid. The performance properties of the prototype will be characterized and compared with linear and non-linear calculations.

  5. A balanced wide-band amplifier for microwave applications

    Science.gov (United States)

    Panzariu, Mircea; Lupescu, Horia; Dumitrascu, Ana; Tamas, Razvan D.

    2015-02-01

    Due to its better performance, high fiability and large power capability, balanced amplifier is one of the most popular designs used in narrow band applications. However, with a balanced amplifier in class A operation, the band-pass is still narrow with classical coupler [1]. In this paper, we propose a new method for widen the band-pass and linearity of the amplifier, by using two Lange couplers and by adding two drivers, so that small signal could be amplified [2], [3], [4], [5]. The proposed amplifier works in the 0.9 - 2.4 GHz band, with good performances. We also propose an A class X-band amplifier, with Wilkinson power divider used as a combiner and divider. The amplifier will operate at 9,5 GHz with Continuous Wave (C.W). The two methods were validated by simulating the balanced amplifier with Lange coupler and the balanced amplifier with Wilkinson power divider, in class A operation.

  6. Nuclear magnetic resonance experiments with dc SQUID amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Heaney, M.B. (California Univ., Berkeley, CA (USA). Dept. of Physics Lawrence Berkeley Lab., CA (USA))

    1990-11-01

    The development and fabrication of dc SQUIDs (Superconducting QUantum Interference Devices) with Nb/Al{sub 2}O{sub 3}/Nb Josephson junctions is described. A theory of the dc SQUID as a radio-frequency amplifier is presented, with an optimization strategy that accounts for the loading and noise contributions of the postamplifier and maximizes the signal-to-noise ratio of the total system. The high sensitivity of the dc SQUID is extended to high field NMR. A dc SQUID is used as a tuned radio-frequency amplifier to detect pulsed nuclear magnetic resonance at 32 MHz from a metal film in a 3.5 Tesla static field. A total system noise temperature of 11 K has been achieved, at a bath temperature of 4.2 K. The minimum number of nuclear Bohr magnetons observable from a free precession signal after a single pulse is about 2 {times} 10{sup 17} in a bandwidth of 25 kHz. In a separate experiment, a dc SQUID is used as a rf amplifier in a NQR experiment to observe a new resonance response mechanism. The net electric polarization of a NaClO{sub 3} crystal due to the precessing electric quadrupole moments of the Cl nuclei is detected at 30 MHz. The sensitivity of NMR and NQR spectrometers using dc SQUID amplifiers is compared to the sensitivity of spectrometers using conventional rf amplifiers. A SQUID-based spectrometer has a voltage sensitivity which is comparable to the best achieved by a FET-based spectrometer, at these temperatures and operating frequencies.

  7. Nuclear magnetic resonance experiments with DC SQUID amplifiers

    Science.gov (United States)

    Heaney, M. B.

    1990-11-01

    The development and fabrication of dc SQUIDs (Superconducting Quantum Interference Devices) with Nb/Al2O3/Nb Josephson junctions is described. A theory of the dc SQUID as a radio-frequency amplifier is presented, with an optimization strategy that accounts for the loading and noise contributions of the postamplifier and maximizes the signal-to-noise ratio of the total system. The high sensitivity of the dc SQUID is extended to high field NMR. A dc SQUID is used as a tuned radio-frequency amplifier to detect pulsed nuclear magnetic resonance at 32 MHz from a metal film in a 3.5 Tesla static field. A total system noise temperature of 11 K has been achieved, at a bath temperature of 4.2 K. The minimum number of nuclear Bohr magnetons observable from a free precession signal after a single pulse is about 2 x 10(exp 17) in a bandwidth of 25 kHz. In a separate experiment, a dc SQUID is used as a rf amplifier in a NQR experiment to observe a new resonance response mechanism. The net electric polarization of a NaClO3 crystal due to the precessing electric quadrupole moments of the Cl nuclei is detected at 30 MHz. The sensitivity of NMR and NQR spectrometers using dc SQUID amplifiers is compared to the sensitivity of spectrometers using conventional rf amplifiers. A SQUID-based spectrometer has a voltage sensitivity which is comparable to the best achieved by a FET-based spectrometer, at these temperatures and operating frequencies.

  8. Programable Driver for Voltage-Controlled Oscillators

    Science.gov (United States)

    Fowler, L. E.; Mcneil, J. A.

    1985-01-01

    Electronically programable read-only memory (EPROM) and digital-to-analog converter provide customized time-varying voltage for frequency modulation. Voltage used to modulate IMPATT oscillator that serves as microwave pump for solid-state maser in low-noise amplifier. EPROM simple to tailor voltage waveform to suit characteristics of given maser. Digital information for waveform programed into EPROM chip; digital-to-analog converter reads information and produces corresponding analog wave. Principle readily adapted to other applications.

  9. Design of a Simple UV Double Beam Spectrophotometer Detector Based on a High Gain Trans Impedance Operational Amplifiers for RNA Measurement

    Directory of Open Access Journals (Sweden)

    Alakhib Ibrahim Abdelbary

    2016-07-01

    Full Text Available In this work a simple double beam spectrophotometer detector for the nucleic acid detection has been designed. The developed system contains photodiodes as a sensor, logarithamatic transimpedance amplifier circuit and filter circuit.The developed prototype design accuracy is validated by running a RNA sample and the result shows that our simplified developed setup detects the present of RNA in the sample.

  10. Research on High-voltage Transmission Line Operation and Maintenance Management%对高压输电线路运维管理的研究

    Institute of Scientific and Technical Information of China (English)

    刘子新

    2014-01-01

    With the development of economy and society, industrial electricity and electricity consumption are increasing;therefore, we must pay attention to the maintenance of high voltage transmission lines run management. Doing work related to the management, to ensure the normal operation of high voltage transmission lines, it is possible for the development of people's life, work and social economy to lay a good foundation.%随着经济社会的不断发展,工业用电和生活用电都在不断增加,所以,必须要重视高压输电线路的运行维护管理工作。做好相关的管理工作,确保高压输电线路的正常运行,能够为人们的生活、工作和社会经济的发展奠定良好的基础。

  11. Design of A Low Power Low Voltage CMOS Opamp

    CERN Document Server

    Baruah, Ratul Kr

    2010-01-01

    In this paper a CMOS operational amplifier is presented which operates at 2V power supply and 1microA input bias current at 0.8 micron technology using non conventional mode of operation of MOS transistors and whose input is depended on bias current. The unique behaviour of the MOS transistors in subthreshold region not only allows a designer to work at low input bias current but also at low voltage. While operating the device at weak inversion results low power dissipation but dynamic range is degraded. Optimum balance between power dissipation and dynamic range results when the MOS transistors are operated at moderate inversion. Power is again minimised by the application of input dependant bias current using feedback loops in the input transistors of the differential pair with two current substractors. In comparison with the reported low power low voltage opamps at 0.8 micron technology, this opamp has very low standby power consumption with a high driving capability and operates at low voltage. The opamp ...

  12. Design of an 1800nm Raman amplifier

    DEFF Research Database (Denmark)

    Svane, Ask Sebastian; Rottwitt, Karsten

    2013-01-01

    We present the experimental results for a Raman amplifier that operates at 1810 nm and is pumped by a Raman fiber laser at 1680 nm. Both the pump laser and the Raman amplifier is polarization maintaining. A challenge when scaling Raman amplifiers to longer wavelengths is the increase...... in transmission loss, but also the reduction in the Raman gain coefficient as the amplifier wavelength is increased. Both polarization components of the Raman gain is characterized, initially for linearly co-polarized signal and pump, subsequently linearly polarized orthogonal signal and pump. The noise...

  13. AIDA: A 16-channel amplifier ASIC to read out the advanced implantation detector array for experiments in nuclear decay spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Braga, D. [STFC Rutherford Appleton Laboratory, Didcot, OX11 0QX (United Kingdom); Coleman-Smith, P. J. [STFC Daresbury Laboratory, Warrington WA4 4AD (United Kingdom); Davinson, T. [Dept. of Physics and Astronomy, Univ. of Edinburgh, Edinburgh EH9 3JZ (United Kingdom); Lazarus, I. H. [STFC Daresbury Laboratory, Warrington WA4 4AD (United Kingdom); Page, R. D. [Dept. of Physics, Univ. of Liverpool, Oliver Lodge Laboratory, Liverpool L69 7ZE (United Kingdom); Thomas, S. [STFC Rutherford Appleton Laboratory, Didcot, OX11 0QX (United Kingdom)

    2011-07-01

    We have designed a read-out ASIC for nuclear decay spectroscopy as part of the AIDA project - the Advanced Implantation Detector Array. AIDA will be installed in experiments at the Facility for Antiproton and Ion Research in GSI, Darmstadt. The AIDA ASIC will measure the signals when unstable nuclei are implanted into the detector, followed by the much smaller signals when the nuclei subsequently decay. Implant energies can be as high as 20 GeV; decay products need to be measured down to 25 keV within just a few microseconds of the initial implants. The ASIC uses two amplifiers per detector channel, one covering the 20 GeV dynamic range, the other selectable over a 20 MeV or 1 GeV range. The amplifiers are linked together by bypass transistors which are normally switched off. The arrival of a large signal causes saturation of the low-energy amplifier and a fluctuation of the input voltage, which activates the link to the high-energy amplifier. The bypass transistors switch on and the input charge is integrated by the high-energy amplifier. The signal is shaped and stored by a peak-hold, then read out on a multiplexed output. Control logic resets the amplifiers and bypass circuit, allowing the low-energy amplifier to measure the subsequent decay signal. We present simulations and test results, demonstrating the AIDA ASIC operation over a wide range of input signals. (authors)

  14. A High Performance CMOS Current Mirror Circuit with Neuron MOSFETs and a Transimpedance Amplifier

    Science.gov (United States)

    Shimizu, Akio; Ishikawa, Yohei; Fukai, Sumio; Aikawa, Masayoshi

    In this paper, we propose a high accuracy current mirror circuit suitable for a low-voltage operation. The proposed circuit has a novel negative feedback that is composed of neuron MOSFETs and a transimpedance amplifier. As a result, the proposed circuit achieves a high accuracy current mirror circuit. At the same time, the proposed circuit monitors an error current by a low voltage because the negative feedback operates in a current-mode. The performance of the proposed circuit is evaluated using HSPICE simulation with On-Semiconductor 1.48μm CMOS device parameters. Simulation results show that the output resistance of the proposed circuit is 5.79[GΩ] and minimum operating range is 0.3[V].

  15. Aqueous Solution-Deposited Gallium Oxide Dielectric for Low-Temperature, Low-Operating-Voltage Indium Oxide Thin-Film Transistors: A Facile Route to Green Oxide Electronics.

    Science.gov (United States)

    Xu, Wangying; Cao, Hongtao; Liang, Lingyan; Xu, Jian-Bin

    2015-07-15

    We reported a novel aqueous route to fabricate Ga2O3 dielectric at low temperature. The formation and properties of Ga2O3 were investigated by a wide range of characterization techniques, revealing that Ga2O3 films could effectively block leakage current even after annealing in air at 200 °C. Furthermore, all aqueous solution-processed In2O3/Ga2O3 TFTs fabricated at 200 and 250 °C showed mobilities of 1.0 and 4.1 cm2 V(-1) s(-1), on/off current ratio of ∼10(5), low operating voltages of 4 V, and negligible hysteresis. Our study represents a significant step toward the development of low-cost, low-temperature, and large-area green oxide electronics.

  16. Lowering the Operational Voltage of Single-Layer Polymer Electroluminescent Devices by Using CuOx Modifying Indium-Tin Oxide Electrode

    Institute of Scientific and Technical Information of China (English)

    ZHOU Xin-ran; ZHAO Xin-wen; HU Wen-ping

    2007-01-01

    In this study it is demonstrated that oxygen-plasma-generated CuOx can enhance the holes injection from ITO anode into polymer layer in single-layer polymer EL devices. The possible reason for this enhancement is because the ITO anode modified with CuOx possesses much higher work function than pure ITO anode, which reduces the barrier for hole-injection and further lowers the operational voltage of the polymer EL devices. The work function shift is probable due to the oxygen-plasma-generated CuOx can store more releasable oxygen, and the releasable oxygen in turn changes the oxygen concentration just near ITO surface, which will shift the work function of ITO anode.

  17. Capture of instantaneous temperature in oscillating flows: use of constant-voltage anemometry to correct the thermal lag of cold wires operated by constant-current anemometry.

    Science.gov (United States)

    Berson, Arganthaël; Poignand, Gaëlle; Blanc-Benon, Philippe; Comte-Bellot, Geneviève

    2010-01-01

    A new procedure for the instantaneous correction of the thermal inertia of cold wires operated by a constant-current anemometer is proposed for oscillating flows. The thermal inertia of cold wires depends both on the wire properties and on the instantaneous incident flow velocity. Its correction is challenging in oscillating flows because no relationship between flow velocity and heat transfer around the wire is available near flow reversal. The present correction procedure requires neither calibration data for velocity nor thermophysical or geometrical properties of the wires. The method relies on the splitting of the time lag of cold wires into two factors, which are obtained using a constant-voltage anemometer in the heated mode. The first factor, which is intrinsic to the wire, is deduced from time-constant measurements performed in a low-turbulence flow. The second factor, which depends on the instantaneous flow velocity, is acquired in situ. In oscillating flows, data acquisition can be synchronized with a reference signal so that the same wire is alternatively operated in the cold mode by a constant-current anemometer and in the heated mode by a constant-voltage anemometer. Validation experiments are conducted in an acoustic standing-wave resonator, for which the fluctuating temperature field along the resonator axis is known independently from acoustic pressure measurements, so that comparisons can be made with cold-wire measurements. It is shown that despite the fact that the wire experiences flow reversal, the new procedure recovers accurately the instantaneous temperature of the flow.

  18. Electronically Tunable High Input Impedance Voltage-Mode Multifunction Filter

    Science.gov (United States)

    Chen, Hua-Pin; Yang, Wan-Shing

    A novel electronically tunable high input impedance voltage-mode multifunction filter with single inputs and three outputs employing two single-output-operational transconductance amplifiers, one differential difference current conveyor and two capacitors is proposed. The presented filter can be realized the highpass, bandpass and lowpass functions, simultaneously. The input of the filter exhibits high input impedance so that the synthesized filter can be cascaded without additional buffers. The circuit needs no any external resistors and employs two grounded capacitors, which is suitable for integrated circuit implementation.

  19. Piezoelectric transformers for low-voltage generation of gas discharges and ionic winds in atmospheric air

    Science.gov (United States)

    Johnson, Michael J.; Go, David B.

    2015-12-01

    To generate a gas discharge (plasma) in atmospheric air requires an electric field that exceeds the breakdown threshold of ˜30 kV/cm. Because of safety, size, or cost constraints, the large applied voltages required to generate such fields are often prohibitive for portable applications. In this work, piezoelectric transformers are used to amplify a low input applied voltage (corona-like discharges on its corners or on adjacent electrodes. In the proper configuration, these discharges can be used to generate a bulk air flow called an ionic wind. In this work, PT-driven discharges are characterized by measuring the discharge current and the velocity of the induced ionic wind with ionic winds generated using input voltages as low as 7 V. The characteristics of the discharge change as the input voltage increases; this modifies the resonance of the system and subsequent required operating parameters.

  20. 5-W Microwave Integrated Circuits (MIC) Gallium Nitride (GaN) Class F Power Amplifier Operating at 2.8 GHz

    Science.gov (United States)

    2010-09-01

    List of Symbols, Abbreviations, and Acronyms 15  Distribition List 16 iv List of Figures Figure 1. I-V characteristics GaN HEMT packaged device...characteristics GaN HEMT packaged device: (a) Cree large-signal model and (b) measured data (Vgs values of –2.8 V to 0.1 V in steps of 0.1 V). S...Two-Stage Quasi-Class-E Power Amplifier in GaN HEMT Technology. IEEE Microwave And Wireless Components Letters 2006, 16, 28–30. 4. Wu, D. Y

  1. High efficiency RF amplifier development over wide dynamic range for accelerator application

    Science.gov (United States)

    Mishra, Jitendra Kumar; Ramarao, B. V.; Pande, Manjiri M.; Joshi, Gopal; Sharma, Archana; Singh, Pitamber

    2017-10-01

    Superconducting (SC) cavities in an accelerating section are designed to have the same geometrical velocity factor (βg). For these cavities, Radio Frequency (RF) power needed to accelerate charged particles varies with the particle velocity factor (β). RF power requirement from one cavity to other can vary by 2-5 dB within the accelerating section depending on the energy gain in the cavity and beam current. In this paper, we have presented an idea to improve operating efficiency of the SC RF accelerators using envelope tracking technique. A study on envelope tracking technique without feedback is carried out on a 1 kW, 325 MHz, class B (conduction angle of 180 degrees) tuned load power amplifier (PA). We have derived expressions for the efficiency and power output for tuned load amplifier operating on the envelope tracking technique. From the derived expressions, it is observed that under constant load resistance to the device (MOSFET), optimum amplifier efficiency is invariant whereas output power varies with the square of drain bias voltage. Experimental results on 1 kW PA module show that its optimum efficiency is always greater than 62% with variation less than 5% from mean value over 7 dB dynamic range. Low power amplifier modules are the basic building block for the high power amplifiers. Therefore, results for 1 kW PA modules remain valid for the high power solid state amplifiers built using these PA modules. The SC RF accelerators using these constant efficiency power amplifiers can improve overall accelerator efficiency.

  2. A CMOS single-supply logarithmic amplifier for hearing aids

    Science.gov (United States)

    Jarng, Soon Suck; Chen, Lingfeng; Kwon, You Jung

    2005-12-01

    The Log Amplifier described in this paper is designed for hearing aids (HA) application. It works on a low single-supply voltage (1.3V). The input signal varies between 0.01mV and 100mV. To give enough compensation to the hearing impairment, the amplifier provides a very large gain. The output swing is limited because of the low supply voltage and the large gain. Therefore, the logarithmic amplifier introduced into the design of HA to compress input signal so that the output distortion can be avoid. Another factor we use it here is that the amplifier has enough sensitivity and gain to deal with the compressed input signal without getting extra distortion coursed by the pre-process on input signal. The short channel CMOS devices play an important role in reduction of the supply voltage. DONG-BU ANAM 0.18 μm process is selected.

  3. Analogue Square Root Calculator Circuit Designed With Logarithmic Amplifiers

    OpenAIRE

    2016-01-01

    In many applications, it has been necessary to calculate square roots of some numbers which are correspond to some voltages values. In this study such an analogue calculator has been designed and simulated in computer medium. Circuit consist of one logarithmic and one antilogarithmic amplifier connected in cascade. The component values of circuit chosen so that the output voltage of circuit is equal to square root of input voltage. The performance of designed circuit is investigated by applyi...

  4. 30 CFR 18.47 - Voltage limitation.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Voltage limitation. 18.47 Section 18.47 Mineral... § 18.47 Voltage limitation. (a) A tool or switch held in the operator's hand or supported against his... particular voltage(s) are provided in the design and construction of the equipment, its wiring,...

  5. Process, Voltage and Temperature Compensation Technique for Cascode Modulated PAs

    DEFF Research Database (Denmark)

    Sira, Daniel; Larsen, Torben

    2013-01-01

    transconductance amplifier. The predistorted varying envelope signal is applied to the cascode gate of the PA. It is shown that the proposed PVT compensation technique significantly reduces the PVT spread of the PA linearity indicators and improves the PA linearity. Simulations were performed in a 0.13 μm CMOS......This paper presents a process, voltage and temperature (PVT) compensation method for a cascode modulated polar power amplifier (PA). It is shown that it is possible to create a baseband replica circuit of the PA that has the same AM-AM nonlinearity as the PA itself. The replica circuit......, that represents a transistor level model (empirical model) of the cascode modulated PA, is utilized in a PA analog predistorter. The analog predistorter linearizes and compensates for PVT variation of the cascode modulated PA. The empirical model is placed in the negative feedback of an operational...

  6. Design and Analysis of Hybrid CMOS SRAM Sense Amplifier

    Directory of Open Access Journals (Sweden)

    Karishma Bajaj

    2012-03-01

    Full Text Available Sense amplifiers are one of the very important peripheral components of CMOS memories. In a Hybrid Sense amplifier both current and voltage sensing techniques are used which makes it a better selection than a conventional current or voltage sense amplifiers. The hybrid sense amplifier works in three phases-Offset cancellation (200ps, Access phase (500ps and Evaluation phase. The offset cancellation is done simultaneously with word line decoding, so as to speed up the process. The sensing range of the hybrid sense amplifier is improved from 1.18mV to 92mV. Also hybrid sense amplifier consumes very low energy of about 6.84fj. This sense amplifier is analyzed with a column of 512 SRAM cells at 180nm technology node and compared to CMOS conventional voltage sense amplifier. The circuit consumes an average power of 1.57 µW with a negligible offset of 149.3µV.

  7. Power amplifiers in CMOS technology : a contribution to power amplifier theory and techniques

    NARCIS (Netherlands)

    Acar, Mustafa

    2011-01-01

    In order to meet the demands from the market on cheaper, miniaturized mobile communications devices realization of RF power amplifiers(PAs) in the mainstream CMOS technology is essential. In general, CMOS PAs require high supply-voltage to decrease the matching network losses and for high output pow

  8. CALCULATION OF OPERATING PARAMETERS OF HIGH-VOLTAGE POWER TAKE-OFF SYSTEM FOR THE PHOTOVOLTAIC FACILITY

    Directory of Open Access Journals (Sweden)

    R.V. Zaitsev

    2016-09-01

    Full Text Available Purpose. To ensure maximum production of electric power by photovoltaic vacilities, in addition to using highly efficient photovoltaic modules equipped with solar radiation concentrators must use a highly effective power take-off system. This paper is inscribed to solving the problem of a highly efficient and economic power take-off system development. Methodology. To solving the problem, we implemented three stages. On the first stage examines the dependence of electrical power from the intensity of the incident solar radiation. Based on this, the second stage is calculated the DC-DC converter resonant circuit and its working parameters, and developed circuit diagram of DC-DC converter. On the third stage, we carry out an analysis of power take-off system with step up DC-DC converter working. Results. In this paper, we carry out the analysis of working efficiency for photovoltaic facility power take-off system with step-up boost converter. The result of such analysis show that the efficiency of such system in a wide range of photovoltaic energy module illumination power is at 0.92, whereas the efficiency of classic power take-off systems does not exceed 0.70. Achieved results allow designing a circuit scheme of a controlled bridge resonant step-up converter with digital control. Proposed scheme will ensure reliable operation, fast and accurate location point of maximum power and conversion efficiency up to 0.96. Originality. Novelty of proposed power take-off system solution constitute in implementation of circuit with DC-DC converters, which as it shown by results of carrying out modeling is the most effective. Practical value. Practical implementation of proposed power take-off system design will allow reducing losses in connective wires and increasing the efficiency of such a system up to 92.5% in wide range of photovoltaic energy modules illumination.

  9. Experiment and Operation of a LHCD-35 kV/2.8 MW/1000 s High-Voltage Power Supply on HT-7 Tokamak

    Institute of Scientific and Technical Information of China (English)

    黄懿赟

    2002-01-01

    A -35 kV/2.8 MW/1000s high-voltage power supply (HVPS) for HT-7 superconducting tokamak has been built successfully. The HVPS is scheduled to run on a 2.45 GHz/1 MW lower hybrid current drive (LHCD) [1] system of HT-7 superconducting tokamak before the set-up of HT-7 superconducting tokamak in 2003. The HVPS has a series of advantages such as good steady and dynamic response, logical computer program controlling the HVPS without any fault, operational panel and experimental board for data acquisition, which both are grounded distinctively in a normative way to protect the main body of HVPS along with its attached equipments from dangers. Electric power cables and other control cables are disposed reasonably, to prevent signals from magnetic interference and ensure the precision of.signal transfer.This paper involves the experiment and operation of a 35 kV/2.8 MW/1000 s HVPS [2] for 2.45 GHz/1 MW LHCD system. The reliability and feasibility of the HVPS has been demonstrated in comparison with experimental results of original design and simulation data.

  10. Modeling a Common-Source Amplifier Using a Ferroelectric Transistor

    Science.gov (United States)

    Sayyah, Rana; Hunt, Mitchell; MacLeond, Todd C.; Ho, Fat D.

    2010-01-01

    This paper presents a mathematical model characterizing the behavior of a common-source amplifier using a FeFET. The model is based on empirical data and incorporates several variables that affect the output, including frequency, load resistance, and gate-to-source voltage. Since the common-source amplifier is the most widely used amplifier in MOS technology, understanding and modeling the behavior of the FeFET-based common-source amplifier will help in the integration of FeFETs into many circuits.

  11. Bi-doped fiber amplifier with a flat gain of 25  dB operating in the wavelength band 1320-1360  nm.

    Science.gov (United States)

    Thipparapu, N K; Umnikov, A A; Barua, P; Sahu, J K

    2016-04-01

    Bismuth (Bi)-doped phosphosilicate fibers have been fabricated by the modified chemical vapor deposition (MCVD)-solution doping technique under different process conditions. The influence of fabrication conditions on unsaturable loss in fibers has been investigated. Pump wavelength dependent Bi gain has been studied to obtain a flat gain over a wide bandwidth. A diode pumped all-fiber Bi-doped amplifier with a flat gain of 25±1  dB from 1320-1360 nm (40 nm) has been demonstrated for -10  dBm of input signal power with a noise figure (NF) ranging from 4-6 dB. Moreover, a small signal gain of 29 dB and a NF of 4.5 dB at 1340 nm has been achieved for an input signal power of -30  dBm.

  12. High Average Power Optical FEL Amplifiers

    CERN Document Server

    Ben-Zvi, I; Litvinenko, V

    2005-01-01

    Historically, the first demonstration of the FEL was in an amplifier configuration at Stanford University. There were other notable instances of amplifying a seed laser, such as the LLNL amplifier and the BNL ATF High-Gain Harmonic Generation FEL. However, for the most part FELs are operated as oscillators or self amplified spontaneous emission devices. Yet, in wavelength regimes where a conventional laser seed can be used, the FEL can be used as an amplifier. One promising application is for very high average power generation, for instance a 100 kW average power FEL. The high electron beam power, high brightness and high efficiency that can be achieved with photoinjectors and superconducting energy recovery linacs combine well with the high-gain FEL amplifier to produce unprecedented average power FELs with some advantages. In addition to the general features of the high average power FEL amplifier, we will look at a 100 kW class FEL amplifier is being designed to operate on the 0.5 ampere Energy Recovery Li...

  13. Low Power Low Voltage Bulk Driven Balanced OTA

    Directory of Open Access Journals (Sweden)

    Neha Gupta

    2012-01-01

    Full Text Available The last few decades, a great deal of attention has been paid to low-voltage (LV low-power (LP integrated circuits design since the power consumption has become a critical issue. Among many techniques used for the design of LV LP analog circuits, the Bulk-driven principle offers a promising route towards this design for many aspects mainly the simplicity and using the conventional MOS technology to implement these designs. This paper is devoted to the Bulk-driven (BD principle and utilizing this principle to design LV LP building block of Operational Transconductance Amplifier (OTA in standard CMOS processes and supply voltage 0.9V. The simulation results have been carried out by the Spice simulatorusing the 130nm CMOS technology from TSMC.

  14. Low Power Low Voltage Bulk Driven Balanced OTA

    Directory of Open Access Journals (Sweden)

    Neha Gupta

    2011-12-01

    Full Text Available The last few decades, a great deal of attention has been paid to low-voltage (LV low-power (LP integrated circuits design since the power consumption has become a critical issue. Among many techniques used for the design of LV LP analog circuits, the Bulk-driven principle offers a promising route towards this design for many aspects mainly the simplicity and using the conventional MOS technology to implement these designs. This paper is devoted to the Bulk-driven (BD principle and utilizing this principle to design LV LP building block of Operational Trans conductance Amplifier (OTA in standard CMOS processes and supply voltage 0.9 V. The simulation results have been carried out by the Spice simulator using the 130 nm CMOS technology from TSMC.

  15. Low Power Low Voltage Bulk Driven Balanced OTA

    CERN Document Server

    Gupta, Neha; Suthar, Meenakshi; Soni, Priyanka

    2012-01-01

    The last few decades, a great deal of attention has been paid to low-voltage (LV) low-power (LP) integrated circuits design since the power consumption has become a critical issue. Among many techniques used for the design of LV LP analog circuits, the Bulk-driven principle offers a promising route towards this design for many aspects mainly the simplicity and using the conventional MOS technology to implement these designs. This paper is devoted to the Bulk-driven (BD) principle and utilizing this principle to design LV LP building block of Operational Transconductance Amplifier (OTA) in standard CMOS processes and supply voltage 0.9V. The simulation results have been carried out by the Spice simulator using the 130nm CMOS technology from TSMC.

  16. Chaotic dynamics of a Chua's system with voltage controllability

    Science.gov (United States)

    Heo, Yun Seok; Jung, Jin Woo; Kim, Ji Man; Jo, Mun Kyu; Song, Han Jung

    2012-04-01

    This paper presents an integrated circuit oriented Chua's chaotic system with voltage controllability. The proposed chaotic system consists of an OTA (Operational Transconductance Amplifier)-based ground inductor, two passive capacitors, a MOS (Metal-Oxide-Semiconductor)-based active resistor and an OTA-based Chua's diode with negative nonlinearity. A SPICE (Simulation Program with Integrated Circuit Emphasis) circuit analysis using 0.5-µm CMOS (Complementary Metal-Oxide-Semiconductor) process parameters was performed for the chaotic dynamics, such as the time waveform and the attractor plot. We confirmed that the chaotic behaviors of the system could be controlled by using the gate voltage of the MOS-based active resistor. Also, various chaotic dynamics of the circuit were analyzed for various MOS sizes of the OTA in the Chua's diode.

  17. An integrated low-power lock-in amplifier and its application to gas detection.

    Science.gov (United States)

    Maya-Hernández, Paulina M; Álvarez-Simón, Luis C; Sanz-Pascual, María Teresa; Calvo-López, Belén

    2014-08-27

    This paper presents a new micropower analog lock-in amplifier (LIA) suitable for battery-operated applications thanks to its reduced size and power consumption as well as its operation with single-supply voltage. The proposed LIA was designed in a 0.18 µm CMOS process with a single supply voltage of 1.8 V. Experimental results show a variable DC gain ranging from 24.7 to 42 dB, power consumption of 417 µW and integration area of 0.013 mm2. The LIA performance was demonstrated by measuring carbon monoxide concentrations as low as 1 ppm in dry N2. The experimental results show that the response to CO of the sensing system can be considerably improved by means of the proposed LIA.

  18. An Integrated Low-Power Lock-In Amplifier and Its Application to Gas Detection

    Directory of Open Access Journals (Sweden)

    Paulina M. Maya-Hernández

    2014-08-01

    Full Text Available This paper presents a new micropower analog lock-in amplifier (LIA suitable for battery-operated applications thanks to its reduced size and power consumption as well as its operation with single-supply voltage. The proposed LIA was designed in a 0.18 µm CMOS process with a single supply voltage of 1.8 V. Experimental results show a variable DC gain ranging from 24.7 to 42 dB, power consumption of 417 µW and integration area of 0.013 mm2. The LIA performance was demonstrated by measuring carbon monoxide concentrations as low as 1 ppm in dry N2. The experimental results show that the response to CO of the sensing system can be considerably improved by means of the proposed LIA.

  19. Based on the EWB 0.6μm CMOS Operational Amplifier Design%基于EWB 0.6μm CMOS运放设计

    Institute of Scientific and Technical Information of China (English)

    陈添兰

    2013-01-01

    根据运放的结构原理及理论指标要求设计一个基于0.6μm CMOS运算放大器.并采用EWB仿真软件仿真运放的各主要指标.指标包括运放的静/动态仿真分析、共/差模抑制比仿真分析.最后参考设计指标要求将仿真结果与理论计算结果相比对,设计出稳定的运放电路.%according to the structure principle and the theory of operational requirement design based on a 0.6μm CMOS opera?tional amplifier. And the use of EWB simulation software simulate OPAMP major indicators, indicators include the static / dy?namic simulation analysis, Co / differential mode rejection ratio. Finally,the reference design requirements the simulation results with the theoretical calculation results compared to design amplifier circuit.

  20. 338-GHz Semiconductor Amplifier Module

    Science.gov (United States)

    Samoska, Lorene A.; Gaier, Todd C.; Soria, Mary M.; Fung, King Man; Rasisic, Vesna; Deal, William; Leong, Kevin; Mei, Xiao Bing; Yoshida, Wayne; Liu, Po-Hsin; Uyeda, Jansen; Lai, Richard

    2010-01-01

    Research findings were reported from an investigation of new gallium nitride (GaN) monolithic millimeter-wave integrated circuit (MMIC) power amplifiers (PAs) targeting the highest output power and the highest efficiency for class-A operation in W-band (75-110 GHz). W-band PAs are a major component of many frequency multiplied submillimeter-wave LO signal sources. For spectrometer arrays, substantial W-band power is required due to the passive lossy frequency multipliers.

  1. Bootstrapped Low-Voltage Analog Switches

    DEFF Research Database (Denmark)

    Steensgaard-Madsen, Jesper

    1999-01-01

    Novel low-voltage constant-impedance analog switch circuits are proposed. The switch element is a single MOSFET, and constant-impedance operation is obtained using simple circuits to adjust the gate and bulk voltages relative to the switched signal. Low-voltage (1-volt) operation is made feasible...

  2. Fast Electrocardiogram Amplifier Recovery after Defibrillation Shock

    Directory of Open Access Journals (Sweden)

    Ivan Dotsinsky

    2005-04-01

    Full Text Available A procedure for fast ECG amplifier recovery after defibrillation shocks was developed and simulated in the MATLAB environment. Exponentially decaying post-shock voltages have been recorded. Signals from the AHA database are taken and mixed with the recorded exponential disturbances. The algorithm applies moving averaging (comb filter on the compound input signal, thereby obtaining the samples of the disturbance. They are currently subtracted from the input signal. The results obtained show that its recovery is practically instantaneous.

  3. On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

    Directory of Open Access Journals (Sweden)

    Masaharu Kobayashi

    2016-02-01

    Full Text Available Internet-of-Things (IoT technologies require a new energy-efficient transistor which operates at ultralow voltage and ultralow power for sensor node devices employing energy-harvesting techniques as power supply. In this paper, a practical device design guideline for low voltage operation of steep-slope negative-capacitance field-effect-transistors (NCFETs operating at sub-0.2V supply voltage is investigated regarding operation speed, material requirement and energy efficiency in the case of ferroelectric HfO2 gate insulator, which is the material fully compatible to Complementary Metal-Oxide-Semiconductor (CMOS process technologies. A physics-based numerical simulator was built to design NCFETs with the use of experimental HfO2 material parameters by modeling the ferroelectric gate insulator and FET channel simultaneously. The simulator revealed that NCFETs with ferroelectric HfO2 gate insulator enable hysteresis-free operation by setting appropriate operation point with a few nm thick gate insulator. It also revealed that, if the finite response time of spontaneous polarization of the ferroelectric gate insulator is 10-100psec, 1-10MHz operation speed can be achieved with negligible hysteresis. Finally, by optimizing material parameters and tuning negative capacitance, 2.5 times higher energy efficiency can be achieved by NCFET than by conventional MOSFETs. Thus, NCFET is expected to be a new CMOS technology platform for ultralow power IoT.

  4. On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

    Science.gov (United States)

    Kobayashi, Masaharu; Hiramoto, Toshiro

    2016-02-01

    Internet-of-Things (IoT) technologies require a new energy-efficient transistor which operates at ultralow voltage and ultralow power for sensor node devices employing energy-harvesting techniques as power supply. In this paper, a practical device design guideline for low voltage operation of steep-slope negative-capacitance field-effect-transistors (NCFETs) operating at sub-0.2V supply voltage is investigated regarding operation speed, material requirement and energy efficiency in the case of ferroelectric HfO2 gate insulator, which is the material fully compatible to Complementary Metal-Oxide-Semiconductor (CMOS) process technologies. A physics-based numerical simulator was built to design NCFETs with the use of experimental HfO2 material parameters by modeling the ferroelectric gate insulator and FET channel simultaneously. The simulator revealed that NCFETs with ferroelectric HfO2 gate insulator enable hysteresis-free operation by setting appropriate operation point with a few nm thick gate insulator. It also revealed that, if the finite response time of spontaneous polarization of the ferroelectric gate insulator is 10-100psec, 1-10MHz operation speed can be achieved with negligible hysteresis. Finally, by optimizing material parameters and tuning negative capacitance, 2.5 times higher energy efficiency can be achieved by NCFET than by conventional MOSFETs. Thus, NCFET is expected to be a new CMOS technology platform for ultralow power IoT.

  5. Lowered operation voltage in Pt/SBi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors by oxynitriding Si

    Science.gov (United States)

    Horiuchi, Takeshi; Takahashi, Mitsue; Li, Qiu-Hong; Wang, Shouyu; Sakai, Shigeki

    2010-05-01

    Oxynitrided Si (SiON) surfaces show smaller subthreshold swings than do directly nitrided Si (SiN) surfaces when used in ferroelectric-gate field-effect transistors (FeFETs) having the following stacked-gate structure: Pt/SrBi2Ta2O9(SBT)/HfO2/Si. SiON/Si substrates for FeFETs were prepared by rapid thermal oxidation (RTO) in O2 at 1000 °C and subsequent rapid thermal nitridation (RTN) in NH3 at various temperatures in the range 950-1150 °C. The electrical properties of the Pt/SBT/HfO2/SiON/Si FeFET were compared with those of reference FETs, i.e. Pt/SBT/HfO2 gate stacks formed on Si substrates subjected to various treatments: SiNx/Si formed by RTN, SiO2/Si formed by RTO and untreated Si. The Pt/SBT/HfO2/SiON/Si FeFET had a larger memory window than all the other reference FeFETs, particularly at low operation voltages when the RTN temperature was 1050 °C.

  6. Low driving voltage Mach-Zehnder interference modulator constructed from an electro-optic polymer on ultra-thin silicon with a broadband operation.

    Science.gov (United States)

    Sato, Hiromu; Miura, Hiroki; Qiu, Feng; Spring, Andrew M; Kashino, Tsubasa; Kikuchi, Takamasa; Ozawa, Masaaki; Nawata, Hideyuki; Odoi, Keisuke; Yokoyama, Shiyoshi

    2017-01-23

    An electro-optic (EO) polymer waveguide using an ultra-thin silicon hybrid has been designed and fabricated. The silicon core has the thickness of 50 nm and a width of 5 μm. The waveguide was completed after covering the cladding with the high temperature stable EO polymer. We have demonstrated a low half-wavelength voltage of 0.9 V at the wavelength of 1.55 μm by using a Mach-Zehnder interference modulator with TM mode operation. The measured modulation corresponded to an effective in-device EO coefficient of 165 pm/V. By utilizing the traveling-wave electrode on the modulator the high-frequency response was tested up to 40 GHz. The 3 dB modulation bandwidth was measured to be 23 GHz. In addition, the high frequency sideband spectral measurement revealed that a linear response of the modulation index against the RF power was confirmed up to 40 GHz signal.

  7. Reduction of RF accelerating voltage of Pohang Light Source-II superconducting RF cavity for stable top-up mode operation

    Science.gov (United States)

    Joo, Y.; Yu, I.; Park, I.; Chun, M. H.; Sohn, Y.

    2017-03-01

    The Pohang Light Source-II (PLS-II) is currently providing a top-up mode user-service operation with maximum available beam current of 400 mA and a beam emittance of below 10 nm-rad. The dimension of the beam bunch shortened to accomplish a low beam emittance of below 10 nm-rad from a high beam current of 400 mA increases the bunch charge density. As a result, the electron beam lifetime is significantly degraded and a high gradient of power is lost in the vacuum components of the storage ring. A study on how to reduce the bunch charge density without degrading beam emittance found that reducing the RF accelerating voltage (Vacc) can lower the bunch charge density by lengthening the bunch in the longitudinal direction. In addition, the Vacc required for stable operation with beam current of 400 mA can be reduced by lowering the external cavity quality factors (Qext values) of the superconducting cavities (SCs). To control the Qext values of SCs gradually without accessing the accelerator tunnel, a remote control motorized three-probe-tuner was installed in the transmission line of each SC. The optimum installation position of the three-probe-tuner was determined by using a finite-difference time-domain (FDTD) simulation and by experimenting on various installation positions of the three-probe-tuner. The Qext values of all the SCs were lowered to 1.40 × 105, and then, the Vacc required to store the beam current of 400 mA was decreased from 4.8 MV to 4.2 MV, which corresponds to 10% lengthening of the beam bunches. The stable operation with the reduced Vacc was confirmed during a 400 mA ten-day top-up mode user-service. Currently, the RF system of the PLS-II storage ring delivers the user-service operation with lowered Qext values to reduce the power loss at the vacuum components as well as the cryogenic heat load of SCs, and no significant problems have been found. This method of reducing the Vacc may also be applied in other synchrotron facilities.

  8. Piezoelectric transformers for low-voltage generation of gas discharges and ionic winds in atmospheric air

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Michael J. [Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indianapolis 46556 (United States); Go, David B., E-mail: dgo@nd.edu [Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indianapolis 46556 (United States); Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, Indianapolis 46556 (United States)

    2015-12-28

    To generate a gas discharge (plasma) in atmospheric air requires an electric field that exceeds the breakdown threshold of ∼30 kV/cm. Because of safety, size, or cost constraints, the large applied voltages required to generate such fields are often prohibitive for portable applications. In this work, piezoelectric transformers are used to amplify a low input applied voltage (<30 V) to generate breakdown in air without the need for conventional high-voltage electrical equipment. Piezoelectric transformers (PTs) use their inherent electromechanical resonance to produce a voltage amplification, such that the surface of the piezoelectric exhibits a large surface voltage that can generate corona-like discharges on its corners or on adjacent electrodes. In the proper configuration, these discharges can be used to generate a bulk air flow called an ionic wind. In this work, PT-driven discharges are characterized by measuring the discharge current and the velocity of the induced ionic wind with ionic winds generated using input voltages as low as 7 V. The characteristics of the discharge change as the input voltage increases; this modifies the resonance of the system and subsequent required operating parameters.

  9. On the design of a low-voltage two-stage OTA using bulk-driven and positive feedback techniques

    Science.gov (United States)

    Khameh, Hassan; Shamsi, Hossein

    2012-09-01

    This article presents the design and simulation of a fully differential two-stage operational transconductance amplifier (OTA) in a 0.18 µm CMOS process with a 0.9 V supply voltage. For this purpose, both the bulk-driven and positive feedback techniques are employed. These techniques increase the DC gain by about 18.5 dB without consuming more power and changing the unity-gain bandwidth and phase margin of the OTA.

  10. Achieving and maintaining cleanliness in NIF amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Burnham, A. K.; Horvath, J. A.; Letts, S. A.; Menapace, J. A.; Stowers, I. F.

    1998-07-28

    Cleanliness measurements made on AMPLAB prototype National Ignition Facility (NIF) laser amplifiers during assembly, cassette transfer, and amplifier operation are summarized. These measurements include particle counts from surface cleanliness assessments using filter swipe techniques and from airborne particle monitoring. Results are compared with similar measurements made on the Beamlet and Nova lasers and in flashlamp test fixtures. Observations of Class 100,000 aerosols after flashlamp firings are discussed. Comparisons are made between typical damage densities on laser amplifier optics from Novette, NOVA, Beamlet, and AMPLAB.

  11. Inverter-Based Low-Voltage CCII- Design and Its Filter Application

    Directory of Open Access Journals (Sweden)

    Y. S. Hwang

    2013-12-01

    Full Text Available This paper presents a negative type second-generation current conveyor (CCII-. It is based on an inverter-based low-voltage error amplifier, and a negative current mirror. The CCII- could be operated in a very low supply voltage such as ±0.5V. The proposed CCII- has wide input voltage range (±0.24V, wide output voltage (±0.24V and wide output current range (±24mA. The proposed CCII- has no on-chip capacitors, so it can be designed with standard CMOS digital processes. Moreover, the architecture of the proposed circuit without cascoded MOSFET transistors is easily designed and suitable for low-voltage operation. The proposed CCII- has been fabricated in TSMC 0.18μm CMOS processes and it occupies 1189.91 x 1178.43μm2 (include PADs. It can also be validated by low voltage CCII filters.

  12. Auto-Zero Differential Amplifier

    Science.gov (United States)

    Quilligan, Gerard T. (Inventor); Aslam, Shahid (Inventor)

    2017-01-01

    An autozero amplifier may include a window comparator network to monitor an output offset of a differential amplifier. The autozero amplifier may also include an integrator to receive a signal from a latched window comparator network, and send an adjustment signal back to the differential amplifier to reduce an offset of the differential amplifier.

  13. MMIC Amplifiers for 90 to 130 GHz

    Science.gov (United States)

    Samoska, Lorene; Pukala, David; Peralta, Alejandro; Bryerton, Eric; Morgan, Matt; Boyd, T.; Hu, Ming; Schmitz, Adele

    2007-01-01

    This brief describes two monolithic microwave integrated-circuit (MMIC) amplifier chips optimized to function in the frequency range of 90 to 130 GHz, covering nearly all of F-band (90 - 140 GHz). These amplifiers were designed specifically for local-oscillator units in astronomical radio telescopes such as the Atacama Large Millimeter Array (ALMA). They could also be readily adapted for use in electronic test equipment, automotive radar systems, and communications systems that operate between 90 and 130 GHz.

  14. Magnetic Bearing Amplifier Output Power Filters for Flywheel Systems

    Science.gov (United States)

    Lebron-Velilla, Ramon C.; Jansen, Ralph H.; Palazzolo, Alan; Thomas, Erwin; Kascak, Peter E.; Birchenough, Arthur G.; Dever, Timothy P.

    2003-01-01

    Five power filters and two types of power amplifiers were tested for use with active magnetic bearings for flywheel applications. Filter topologies included low pass filters and low pass filters combined with trap filters at the PWM switching frequency. Two state and three state PWM amplifiers were compared. Each system was evaluated based on current magnitude at the switching frequency, voltage magnitude at 500 kHz, and power consumption. The base line system was a two state amplifier without a power filter. The recommended system is a three state power amplifier with a 50 kHz low pass filter and a 27 kHz trap filter. This system uses 5.57 W. It reduces the switching current by an order of magnitude and the 500 kHz voltage by two orders of magnitude. The relative power consumption varied depending on the test condition between 60 to 130 percent of the baseline.

  15. A dual-amplifier hot-wire anemometer

    Science.gov (United States)

    Sadeh, W. Z.; Finn, C. L.

    1979-01-01

    The conceptual design of a dual-amplifier constant-temperature hot-wire anemometer is described. This hot-wire anemometer consists of three basic independent modules: a Wheatstone bridge in which the hot wire is one of its arms, an error-correction amplifier, and a voltage-controlled current source. The last two modules constitute the feedback network of this hot-wire anemometer. Thus the output voltage across the wire is a true function of the instantaneous changes in the wire resistance induced by the cooling effect of the flow. The dual-amplifier is capable of reaching relatively high frequency response through adequate selection of its active elements. Suitable gain of the error-correction amplifier and proper choice of the transfer function of the current source has yielded a frequency bandwidth up to 200 kHz.

  16. Active filter based on operational amplifier circuit simulation and research%基于运算放大器的有源滤波器电路仿真研究

    Institute of Scientific and Technical Information of China (English)

    张科; 蒲娟

    2014-01-01

    为降低模拟采样前置电路的噪声,文章用集成运算放大器分别设计了低通滤波器,高通滤波器和带通滤波器电路三种电路,并用Multisim 12软件分别对这些电路进行了仿真并分析了电路各项指标和特点。%In order to reducing the noise of the analog front end circuit sampling, the authors use the integrated operational amplifier design respectively low-pass filter, high-pass filter and bandpass filter circuit, and software Multisim 12 of these circuits are simulated and analyzed respectively circuit and characteristics of the indicators.

  17. Effects of octreotide on expression of L-type voltage-operated calcium channels and on intracellular Ca2+ in activated hepatic stellate cells

    Institute of Scientific and Technical Information of China (English)

    丁惠国; 王宝恩; 贾继东; 夏华向; 王振宇; 赵春惠; 徐燕琳

    2004-01-01

    Background The contractility of hepatic stellate cells (HSCs) may play an important role in the pathogenesis of cirrhosis with portal hypertension. The aim of this study was to research the effects of octreotide, an analogue of somatostatin, on intracellular Ca2+ and on the expression of L-type voltage-operated calcium channels (L-VOCCs) in activated HSCs, and to try to survey the use of octreotide in treatment and prevention of cirrhosis with portal hypertension complications. Methods HSC-T6, an activated HSCs line, was plated on small glass coverslips in 35-mm culture dishes at a density of 1×105/ml, and incubated in DMEM media for 24 hours. After the cells were loaded with Fluo-3/AM, intracellular Ca2+ was measured by Laser Scanning Confocal Microscopy (LSCM). The dynamic changes in activated HSCs of intracellular Ca2+, stimulated by octreotide, endothelin-1, and KCl, respectively, were also determined by LSCM. Each experiment was repeated six times. L-VOCC expression in HSCs was estimated by immunocytochemistry. Results After octreotide stimulation, a signifcant decrease in the intracellular Ca2+ of activated HSCs was observed. However, octreotide did not inhibit the increases in intracellular Ca2+ after stimulation by KCl and endothelin-1. Moreover, octreotide did not significantly affect L-VOCC expression. These results suggest that neither L-VOCC nor endothelin-1 receptors in activated HSCs are inhibited by octreotide. Conclusions Octreotide may decrease portal hypertension and intrahepatic vascular tension by inhibiting activated HSCs contractility through decreases in intracellular Ca2+. The somatostatin receptors in activated HSCs may be inhibited by octreotide.

  18. High-voltage picoamperemeter

    Energy Technology Data Exchange (ETDEWEB)

    Bugl, Andrea; Ball, Markus; Boehmer, Michael; Doerheim, Sverre; Hoenle, Andreas; Konorov, Igor [Technische Universitaet Muenchen, Garching (Germany); Ketzer, Bernhard [Technische Universitaet Muenchen, Garching (Germany); Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany)

    2014-07-01

    Current measurements in the nano- and picoampere region on high voltage are an important tool to understand charge transfer processes in micropattern gas detectors like the Gas Electron Multiplier (GEM). They are currently used to e.g. optimize the field configuration in a multi-GEM stack to be used in the ALICE TPC after the upgrade of the experiment during the 2nd long shutdown of the LHC. Devices which allow measurements down to 1pA at high voltage up to 6 kV have been developed at TU Muenchen. They are based on analog current measurements via the voltage drop over a switchable shunt. A microcontroller collects 128 digital ADC values and calculates their mean and standard deviation. This information is sent with a wireless transmitting unit to a computer and stored in a root file. A nearly unlimited number of devices can be operated simultaneously and read out by a single receiver. The results can also be displayed on a LCD directly at the device. Battery operation and the wireless readout are important to protect the user from any contact to high voltage. The principle of the device is explained, and systematic studies of their properties are shown.

  19. Design and validation of a high-voltage levitation circuit for electrostatic accelerometers.

    Science.gov (United States)

    Li, G; Wu, S C; Zhou, Z B; Bai, Y Z; Hu, M; Luo, J

    2013-12-01

    A simple high-voltage circuit with a voltage range of 0 to 900 V and an open-loop bandwidth of 11 kHz is realized by using an operational amplifier and a MOSFET combination. The circuit is used for the levitation of a test mass of 71 g, suspended below the top-electrodes with a gap distance of 57 μm, so that the performance of an electrostatic accelerometer can be tested on the ground. The translation noise of the accelerometer, limited by seismic noise, is about 4 × 10(-8) m/s(2)/Hz(1/2) at 0.1 Hz, while the high-voltage coupling noise is one-order of magnitude lower.

  20. RF Power Amplifier Analysis

    Directory of Open Access Journals (Sweden)

    M. Lokay

    1993-04-01

    Full Text Available The special program is presented for the demonstration of RF power transistor amplifiers for the purposes of the high-school education in courses of radio transmitters. The program is written in Turbo Pascal 6. 0 and enables to study the waveforms in selected points of the amplifier and to draw the trajectories of the working point in a plot of output transistor characteristics.

  1. Design of a new VHF RF power amplifier system for LANSCE

    Energy Technology Data Exchange (ETDEWEB)

    Lyles, John T M [Los Alamos National Laboratory

    2010-01-01

    A major upgrade is replacing much of the 40 year-old proton drift tube linac RF system with new components at the Los Alamos Neutron Science Center (LANSCE). When installed, the new system will reduce the total number of electron power tubes from twenty-four to eight in the RF powerplant. A new 200 MHz high power cavity amplifier has being developed at LANSCE. This 3.2 MW final power amplifier (FPA) uses a Thales TH628 Diacrode{reg_sign}, a state-of-the-art tetrode that eliminates the large anode modulator of the triode-based FPA that has been in use for four decades. Drive power for the FPA is provided by a new tetrode intermediate power amplifier (and a solid-state driver stage). The new system has sufficient duty-factor capability to allow LANSCE to return to 1 MW beam operation. Prototype RF power amplifiers have been designed, fabricated, and assembled, and are being tested. High voltage DC power became available through innovative re-engineering of an installed system. Details of the electrical and mechanical design of the FPA and ancillary systems are discussed.

  2. Note: A high dynamic range, linear response transimpedance amplifier.

    Science.gov (United States)

    Eckel, S; Sushkov, A O; Lamoreaux, S K

    2012-02-01

    We have built a high dynamic range (nine decade) transimpedance amplifier with a linear response. The amplifier uses junction-gate field effect transistors (JFETs) to switch between three different resistors in the feedback of a low input bias current operational amplifier. This allows for the creation of multiple outputs, each with a linear response and a different transimpedance gain. The overall bandwidth of the transimpedance amplifier is set by the bandwidth of the most sensitive range. For our application, we demonstrate a three-stage amplifier with transimpedance gains of approximately 10(9)Ω, 3 × 10(7)Ω, and 10(4)Ω with a bandwidth of 100 Hz.

  3. High power regenerative laser amplifier

    Science.gov (United States)

    Miller, J.L.; Hackel, L.A.; Dane, C.B.; Zapata, L.E.

    1994-02-08

    A regenerative amplifier design capable of operating at high energy per pulse, for instance, from 20-100 Joules, at moderate repetition rates, for instance from 5-20 Hertz is provided. The laser amplifier comprises a gain medium and source of pump energy coupled with the gain medium; a Pockels cell, which rotates an incident beam in response to application of a control signal; an optical relay system defining a first relay plane near the gain medium and a second relay plane near the rotator; and a plurality of reflectors configured to define an optical path through the gain medium, optical relay and Pockels cell, such that each transit of the optical path includes at least one pass through the gain medium and only one pass through the Pockels cell. An input coupler, and an output coupler are provided, implemented by a single polarizer. A control circuit coupled to the Pockels cell generates the control signal in timed relationship with the input pulse so that the input pulse is captured by the input coupler and proceeds through at least one transit of the optical path, and then the control signal is applied to cause rotation of the pulse to a polarization reflected by the polarizer, after which the captured pulse passes through the gain medium at least once more and is reflected out of the optical path by the polarizer before passing through the rotator again to provide an amplified pulse. 7 figures.

  4. New active-only grounded inductance simulator employing current-mode approach suitable for wide band operation

    Science.gov (United States)

    Yamacli, Serhan; Ozcan, Sadri; Kuntman, Hakan

    2011-08-01

    In this paper, an active-only grounded lossless inductance simulator operating in current-mode is presented. The circuit uses only a current operational amplifier (COA) and an operational transconductance amplifier (OTA). The novelty of the proposed circuit is that it uses a COA instead of a voltage operational amplifier (VOA) to take the wider frequency operation advantage of the current-mode approach. The simulation results obtained through SPICE with 0.5 μm standard CMOS technology verify that the designed circuit can be operated up to 30 MHz, which is much higher than the operation frequency of previously reported inductance simulators utilising VOAs. The inductance value of the presented circuit can be adjusted electronically between 3.9 μH and 37 μH via the biasing current of the OTA. A parallel resonance circuit application is also given validating the operation of the proposed inductance simulator.

  5. Testing methodologies and systems for semiconductor optical amplifiers

    Science.gov (United States)

    Wieckowski, Michael

    Semiconductor optical amplifiers (SOA's) are gaining increased prominence in both optical communication systems and high-speed optical processing systems, due primarily to their unique nonlinear characteristics. This in turn, has raised questions regarding their lifetime performance reliability and has generated a demand for effective testing techniques. This is especially critical for industries utilizing SOA's as components for system-in-package products. It is important to note that very little research to date has been conducted in this area, even though production volume and market demand has continued to increase. In this thesis, the reliability of dilute-mode InP semiconductor optical amplifiers is studied experimentally and theoretically. The aging characteristics of the production level devices are demonstrated and the necessary techniques to accurately characterize them are presented. In addition, this work proposes a new methodology for characterizing the optical performance of these devices using measurements in the electrical domain. It is shown that optical performance degradation, specifically with respect to gain, can be directly qualified through measurements of electrical subthreshold differential resistance. This metric exhibits a linear proportionality to the defect concentration in the active region, and as such, can be used for prescreening devices before employing traditional optical testing methods. A complete theoretical analysis is developed in this work to explain this relationship based upon the device's current-voltage curve and its associated leakage and recombination currents. These results are then extended to realize new techniques for testing semiconductor optical amplifiers and other similarly structured devices. These techniques can be employed after fabrication and during packaged operation through the use of a proposed stand-alone testing system, or using a proposed integrated CMOS self-testing circuit. Both methods are capable

  6. Proposal for a Casimir-driven parametric amplifier

    CERN Document Server

    Imboden, M; Campbell, D K; Bishop, D J

    2014-01-01

    In this paper, we discuss a design for a MEMS parametric amplifier modulated by the Casimir force. We present the theory for such a device and show that it allows for the implementation of a very sensitive voltage measuring technique, where the amplitude of a high quality factor resonator includes a tenth power dependency on an applied DC voltage. This approach opens up a new and powerful measuring modality, applicable to other measurement types.

  7. Capacitor Voltages Measurement and Balancing in Flying Capacitor Multilevel Converters Utilizing a Single Voltage Sensor

    DEFF Research Database (Denmark)

    Farivar, Glen; Ghias, Amer M. Y. M.; Hredzak, Branislav

    2017-01-01

    This paper proposes a new method for measuring capacitor voltages in multilevel flying capacitor (FC) converters that requires only one voltage sensor per phase leg. Multiple dc voltage sensors traditionally used to measure the capacitor voltages are replaced with a single voltage sensor at the ac...... side of the phase leg. The proposed method is subsequently used to balance the capacitor voltages using only the measured ac voltage. The operation of the proposed measurement and balancing method is independent of the number of the converter levels. Experimental results presented for a five-level FC...

  8. Laser Cooled High-Power Fiber Amplifier

    CERN Document Server

    Nemova, Galina

    2009-01-01

    A theoretical model for laser cooled continuous-wave fiber amplifier is presented. The amplification process takes place in the Tm3+-doped core of the fluoride ZBLAN (ZrF4-BaF2-LaF3-AlF3-NaF) glass fiber. The cooling process takes place in the Yb3+:ZBLAN fiber cladding. It is shown that for each value of the pump power and the amplified signal there is a distribution of the concentration of the Tm3+ along the length of the fiber amplifier, which provides its athermal operation. The influence of a small deviation in the value of the amplified signal on the temperature of the fiber with the fixed distribution of the Tm3+ions in the fiber cladding is investigated.

  9. A battery-based, low-noise voltage source

    Science.gov (United States)

    Wagner, Anke; Sturm, Sven; Schabinger, Birgit; Blaum, Klaus; Quint, Wolfgang

    2010-06-01

    A highly stable, low-noise voltage source was designed to improve the stability of the electrode bias voltages of a Penning trap. To avoid excess noise and ground loops, the voltage source is completely independent of the public electric network and uses a 12 V car battery to generate output voltages of ±15 and ±5 V. First, the dc supply voltage is converted into ac-voltage and gets amplified. Afterwards, the signal is rectified, filtered, and regulated to the desired output value. Each channel can deliver up to 1.5 A. The current as well as the battery voltage and the output voltages can be read out via a universal serial bus (USB) connection for monitoring purposes. With the presented design, a relative voltage stability of 7×10-7 over 6.5 h and a noise level equal or smaller than 30 nV/√Hz is achieved.

  10. A Three-Stage Operational Amplifier for a Wide Range of Capacitive Loads%一种适合宽范围电容负载的三级运放

    Institute of Scientific and Technical Information of China (English)

    胡晶晶; Johan H. Huijsing; 任俊彦

    2008-01-01

    结合精确度和稳定性的要求提出了一种适合宽范围电容负载的CMOS运放.在多径嵌套式密勒补偿结构中加入一个抑制电容,得到适合各种电容负载的稳定性.为了证实稳定性的提高,对该结构进行了理论分析并计算得出数学表达式.基于这种新的频率补偿结构,利用CMOS 0.7 μm工艺模型设计了样品芯片.测试结果表明该运放可以驱动从100 pF到100 μF负载电容, 直流增益为90 dB,最小相位裕度为26°.该运放在100 pF负载情况下单位增益带宽为1 MHz,抑制电容仅为18 pF.%It is presented a three-stage CMOS operational amplifier (opamp) that meets the requirement of both accuracy and stability for a wide range of capacitive loads. A so-called quenching capacitor is added to multipath nested Miller compensation (MNMC) topology to obtain stability for a variety of capacitive loads. Theoretical analysis and calculation are carried out to prove the stability improvement. A prototype of this frequency compensation scheme is implemented in 0.7 μm CMOS process. The measurement results show that the amplifier is able to drive capacitive loads ranging from 100 pF to 100 μF with a gain of 90 dB and a minimum phase margin of 26°. The amplifier has a unity-gain bandwidth of 1 MHz for 100 pF capacitive load. The quenching capacitance is only 18 pF.

  11. 一种带有增益提高技术的高速CMOS运算放大器设计%Design of a high speed CMOS operational amplifier with gain boosting technique

    Institute of Scientific and Technical Information of China (English)

    宋奇伟; 陆安江; 张正平

    2012-01-01

    设计了一种用于高速ADC中的高速高增益的全差分CMOS运算放大器。主运放采用带开关电容共模反馈的折叠式共源共栅结构,利用增益提高和三支路电流基准技术实现一个可用于12~14 bit精度,100 MS/s采样频率的高速流水线(Pipelined)ADC的运放。设计基于SMIC 0.25μm CMOS工艺,在Cadence环境下对电路进行Spectre仿真。仿真结果表明,在2.5 V单电源电压下驱动2 pF负载时,运放的直流增益可达到124 dB,单位增益带宽720 MHz,转换速率高达885 V/μs,达到0.1%的稳定精度的建立时间只需4 ns,共模抑制比153 dB。%A fully differential opamp used in a high speed ADC was designed.The main amplifier is a folded cascode amplifier with SC CMFB.The opamp can be used in a 12 bit、100MS/s high speed Pipelined ADC with gain boosting and the triple-branch current reference technique.The operational amplifier is implemented in a standard 0.25 μm CMOS process,simulated with Spectre under Cadence.With 2.5 V power supply and 2 pF load capacitance has a DC gain of 124 dB,a unity gain bandwidth of 720 MHz,Slew Rate of 885 V/μs,4 ns settling time and 153dB CMRR.

  12. 有载调压分接开关运行与异常状态分析%Operation and the Abnormal State of Load Voltage Regulation Tap

    Institute of Scientific and Technical Information of China (English)

    员学军

    2011-01-01

    本文介绍了CV型有载调压分接开关的动作原理、电压变化过程,对有载调压分接开关异常情况进行了汇总分析,强调了加强状态检修与维护的要点,并提出了一些有价值的建议.%This paper introduces the action principle of CV-type load voltage regulation tap, the change process of voltage, summarizes the abnormal situations of load voltage regulation tap, emphasizes the main points of the state repair and maintenance, and made some valuable suggestions.

  13. Sixty hertz neurostimulation amplifies subthalamic neural synchrony in Parkinson's disease.

    Directory of Open Access Journals (Sweden)

    Zack Blumenfeld

    Full Text Available High frequency subthalamic nucleus (STN deep brain stimulation (DBS improves the cardinal motor signs of Parkinson's disease (PD and attenuates STN alpha/beta band neural synchrony in a voltage-dependent manner. While there is a growing interest in the behavioral effects of lower frequency (60 Hz DBS, little is known about its effect on STN neural synchrony. Here we demonstrate for the first time that during intra-operative 60 Hz STN DBS, one or more bands of resting state neural synchrony were amplified in the STN in PD. We recorded intra-operative STN resting state local field potentials (LFPs from twenty-eight STNs in seventeen PD subjects after placement of the DBS lead (model 3389, Medtronic, Inc. before and during three randomized neurostimulation sets (130 Hz/1.35V, 130 Hz/2V, 60 Hz/2V. During 130 Hz/2V DBS, baseline (no DBS STN alpha (8-12 Hz and beta (13-35 Hz band power decreased (N=14, P < 0.001 for both, whereas during 60 Hz/2V DBS, alpha band and peak frequency power increased (P = 0.012, P = 0.007, respectively. The effect of 60 Hz/2V DBS opposed that of power-equivalent (130 Hz/1.35V DBS (alpha: P < 0.001, beta: P = 0.006. These results show that intra-operative 60 Hz STN DBS amplified whereas 130 Hz STN DBS attenuated resting state neural synchrony in PD; the effects were frequency-specific. We demonstrate that neurostimulation may be useful as a tool to selectively modulate resting state resonant bands of neural synchrony and to investigate its influence on motor and non-motor behaviors in PD and other neuropsychiatric diseases.

  14. VOLTAGE REGULATORS ASYNCHRONOUS GENERATORS

    Directory of Open Access Journals (Sweden)

    Grigorash O. V.

    2015-06-01

    Full Text Available A promising is currently the use of asynchronous generators with capacitive excitation as a source of electricity in stand-alone power systems. Drive asynchronous generators may exercise as a thermal engine and wind wheel wind power plant or turbines of small hydropower plants. The article discusses the structural and schematics of voltage stabilizers and frequency of asynchronous generators with improved operational and technical specifications. Technical novelty of design solutions of the magnetic system and stabilizers asynchronous generator of electricity parameters confirmed by the patents for the invention of the Russian Federation. The proposed technical solution voltage stabilizer asynchronous generators, can reduce the weight of the block capacitors excitation and reactive power compensation, as well as to simplify the control system power circuit which has less power electronic devices. For wind power plants it is an important issue not only to stabilize the voltage of the generator, but also the frequency of the current. Recommend functionality stabilizer schemes parameters of electric power made for direct frequency converters with artificial and natural switching power electronic devices. It is also proposed as part of stabilization systems use single-phase voltage, three-phase transformers with rotating magnetic field, reduce the level of electromagnetic interference generated by power electronic devices for switching, enhance the efficiency and reliability of the stabilizer.

  15. High-Voltage, Asymmetric-Waveform Generator

    Science.gov (United States)

    Beegle, Luther W.; Duong, Tuan A.; Duong, Vu A.; Kanik, Isik

    2008-01-01

    The shapes of waveforms generated by commercially available analytical separation devices, such as some types of mass spectrometers and differential mobility spectrometers are, in general, inadequate and result in resolution degradation in output spectra. A waveform generator was designed that would be able to circumvent these shortcomings. It is capable of generating an asymmetric waveform, having a peak amplitude as large as 2 kV and frequency of several megahertz, which can be applied to a capacitive load. In the original intended application, the capacitive load would consist of the drift plates in a differential-mobility spectrometer. The main advantage to be gained by developing the proposed generator is that the shape of the waveform is made nearly optimum for various analytical devices requiring asymmetric-waveform such as differential-mobility spectrometers. In addition, this waveform generator could easily be adjusted to modify the waveform in accordance with changed operational requirements for differential-mobility spectrometers. The capacitive nature of the load is an important consideration in the design of the proposed waveform generator. For example, the design provision for shaping the output waveform is based partly on the principle that (1) the potential (V) on a capacitor is given by V=q/C, where C is the capacitance and q is the charge stored in the capacitor; and, hence (2) the rate of increase or decrease of the potential is similarly proportional to the charging or discharging current. The proposed waveform generator would comprise four functional blocks: a sine-wave generator, a buffer, a voltage shifter, and a high-voltage switch (see Figure 1). The sine-wave generator would include a pair of operational amplifiers in a feedback configuration, the parameters of which would be chosen to obtain a sinusoidal timing signal of the desired frequency. The buffer would introduce a slight delay (approximately equal to 20 ns) but would otherwise

  16. The System Identification and Model Design of Linear Power Amplifier%线性功率放大器模型设计及其系统辨识

    Institute of Scientific and Technical Information of China (English)

    谢珺耀; 李久芳

    2011-01-01

    The linear power amplifier can control an ideal state to output voltage and current,so it is widely used in industrial control area.Such as programming voltage source,programming current source,voice motor driver,linear motor driver,etc.The linear power amplifier is mainly based on the power operational amplifier,in performance close to the ideal operational amplifier model,with a high dynamic voltage and current range.It is easy to enhance driving current.In this paper,using the design of the amplifier model,the calculation of transfer function,system performance analysis,simulation and identification with MATLAB to fully verify system performance,and thus make the best system design.%线性功率放大器可对其输出电压和电流进行比较理想的控制,因此在工业控制场合得到了广泛的应用。如可编程电压源、可编程电流源、音圈电机驱动、直线电机驱动等。线性功率放大器主要以功率运算放大器为基础,在性能上接近理想的运算放大器的同时具有较高的动态电压和动态电流范围,如果要进行驱动电流提升,也很容易实现。从放大器的模型设计、传递函数计算、系统性能分析和MATLAB仿真辨识来全面验证系统设计的指标性能,从而做出最佳系统设计。

  17. A New Compensation Technique for Stable The Gain of Sub-Micron Amplifiers

    Directory of Open Access Journals (Sweden)

    Billu.balaji

    2014-12-01

    Full Text Available Process variation is an difficulty in designing reliable CMOS mixed signal systems with high yield. To minimize the variation in voltage gain due to variations in process, supply voltage, and temperature for common trans conductance-based amplifiers, we present a new compensation method based on statistical feedback of process information. We further apply our scheme to two well known amplifier topologies in the sun-micron CMOS process as design examples—an inductive degenerated low-noise amplifier (LNA and a common source amplifier (CSA. The proposed method improves the variation in S21 of an inductively degenerated cascade LNA from 8.75% to 1.27%, which is a reduction in variation of 85%. The presented scheme is also robust over variations in supply voltage, temperature, and process conditions. The compensation method presented can be utilized to stabilize the gain of a wide variety of amplifiers.

  18. The low threshold voltage n-type silicon transistors based on a polymer/silica nanocomposite gate dielectric: The effect of annealing temperatures on their operation

    Science.gov (United States)

    Hashemi, Adeleh; Bahari, Ali; Ghasemi, Shahram

    2017-09-01

    In this work, povidone/silica nanocomposite dielectric layers were deposited on the n-type Si (100) substrates for application in n-type silicon field-effect transistors (FET). Thermogravimetric analysis (TGA) indicated that strong chemical interactions between polymer and silica nanoparticles were created. In order to examine the effect of annealing temperatures on chemical interactions and nanostructure properties, annealing process was done at 423-513 K. Atomic force microscopy (AFM) images show the very smooth surfaces with very low surface roughness (0.038-0.088 nm). The Si2p and C1s core level photoemission spectra were deconvoluted to the chemical environments of Si and C atoms respectively. The obtained results of deconvoluted X-ray photoelectron spectroscopy (XPS) spectra revealed a high percentage of silanol hydrogen bonds in the sample which was not annealed. These bonds were inversed to stronger covalence bonds (siloxan bonds) at annealing temperature of 423 K. By further addition of temperature, siloxan bonds were shifted to lower binding energy of about 1 eV and their intensity were abated at annealing temperature of 513 K. The electrical characteristics were extracted from current-Voltage (I-V) and capacitance-voltage (C-V) measurements in metal-insulator-semiconductor (MIS) structure. The all n-type Si transistors showed very low threshold voltages (-0.24 to 1 V). The formation of the strongest cross-linking at nanostructure of dielectric film annealed at 423 K caused resulted in an un-trapped path for the transport of charge carriers yielding the lowest threshold voltage (0.08 V) and the highest electron mobility (45.01 cm2/V s) for its FET. By increasing the annealing temperature (473 and 513 K) on the nanocomposite dielectric films, the values of the average surface roughness, the capacitance and the FET threshold voltage increased and the value of FET electron field-effect mobility decreased.

  19. Voltage Sensors Monitor Harmful Static

    Science.gov (United States)

    2009-01-01

    A tiny sensor, small enough to be worn on clothing, now monitors voltage changes near sensitive instruments after being created to alert Agency workers to dangerous static buildup near fuel operations and avionics. San Diego s Quasar Federal Systems received a Small Business Innovation Research (SBIR) contract from Kennedy Space Center to develop its remote voltage sensor (RVS), a dime-sized electrometer designed to measure triboelectric changes in the environment. One of the unique qualities of the RVS is that it can detect static at greater distances than previous devices, measuring voltage changes from a few centimeters to a few meters away, due to its much-improved sensitivity.

  20. A dual mode charge pump with adaptive output used in a class G audio power amplifier*

    Institute of Scientific and Technical Information of China (English)

    Feng Yong; Peng Zhenfei; Yang Shanshan; Hong Zhiliang; Liu Yang

    2011-01-01

    A dual mode charge pump to produce an adaptive power supply for a class G audio power amplifier is presented. According to the amplitude of the input signals, the charge pump has two level output voltage rails available to save power. It operates both in current mode at high output load and in pulse frequency modulation (PFM) at light load to reduce the power dissipation. Also, dynamic adjustment of the power stage transistor size based on load current at the PFM mode is introduced to reduce the output voltage ripple and prevent the switching frequency from audio range. The prototype is implemented in 0.18μm 3.3 V CMOS technology. Experimental results show that the maximum power efficiency of the charge pump is 79.5% @ 0.5x mode and 83.6% @ lx mode. The output voltage ripple is less than 15 mV while providing 120 mA of the load current at PFM control and less than 18 mV while providing 300 mA of the load current at current mode control. An analytical model for ripple voltage and efficiency calculation of the proposed PFM control demonstrates reasonable agreement with measured results.

  1. A dual mode charge pump with adaptive output used in a class G audio power amplifier

    Energy Technology Data Exchange (ETDEWEB)

    Feng Yong; Peng Zhenfei; Yang Shanshan; Hong Zhiliang [State Key Laboratory of ASIC and System, Fudan University Shanghai 201203 (China); Liu Yang, E-mail: zlhong@fudan.edu.cn [Shanghai Design Center, Analog Devices, Shanghai 200021 (China)

    2011-04-15

    A dual mode charge pump to produce an adaptive power supply for a class G audio power amplifier is presented. According to the amplitude of the input signals, the charge pump has two level output voltage rails available to save power. It operates both in current mode at high output load and in pulse frequency modulation (PFM) at light load to reduce the power dissipation. Also, dynamic adjustment of the power stage transistor size based on load current at the PFM mode is introduced to reduce the output voltage ripple and prevent the switching frequency from audio range. The prototype is implemented in 0.18 {mu}m 3.3 V CMOS technology. Experimental results show that the maximum power efficiency of the charge pump is 79.5% - 0.5x mode and 83.6% - 1x mode. The output voltage ripple is less than 15 mV while providing 120 mA of the load current at PFM control and less than 18 mV while providing 300 mA of the load current at current mode control. An analytical model for ripple voltage and efficiency calculation of the proposed PFM control demonstrates reasonable agreement with measured results. (semiconductor integrated circuits)

  2. Multilevel inverter based class D audio amplifier for capacitive transducers

    DEFF Research Database (Denmark)

    Nielsen, Dennis; Knott, Arnold; Andersen, Michael A. E.

    2014-01-01

    The reduced semiconductor voltage stress makes the multilevel inverters especially interesting, when driving capacitive transducers for audio applications. A ± 300 V flying capacitor class D audio amplifier driving a 100 nF load in the midrange region of 0.1-3.5 kHz with Total Harmonic Distortion...

  3. A 0.02% THD and 80 dB PSRR filterless class D amplifier with direct lithium battery hookup in mobile application

    Science.gov (United States)

    Zheng, Hao; Zhu, Zhangming; Ma, Rui

    2017-07-01

    This paper presents a fully integrated CMOS filterless class D amplifier that can directly hook up lithium battery in mobile application The proposed amplifier embodies a 2-order feedback path architecture instead of direct feedback of output to input of the integrator to decrease the high frequency intermodulation distortion associated with direct feedback and eliminate the integrator input common mode disturbance from the output in ternary modulation. The prototype class D amplifier realized in 0.35 μm digital technology achieves a THD+N of 0.02% when delivering 400 mW to an 8 {{Ω }} load from {V}{DD}=3.6 {{V}}. The PSRR of the prototype class D amplifier is 80 dB at 217 Hz. Furthermore a filterless method that can eliminate the external LC filter is employed which offers great advantages of saving PCB space and lowering system cost. In addition the prototype class D amplifier can operate in large voltage range with V DD range from 2.5 to 4.2 V in mobile application. The total area of the amplifier is 1.7 mm2. Project supported by the National Natural Science Foundation of China (Nos. 61234002, 61322405, 61306044).

  4. Fourier plane image amplifier

    Science.gov (United States)

    Hackel, L.A.; Hermann, M.R.; Dane, C.B.; Tiszauer, D.H.

    1995-12-12

    A solid state laser is frequency tripled to 0.3 {micro}m. A small portion of the laser is split off and generates a Stokes seed in a low power oscillator. The low power output passes through a mask with the appropriate hole pattern. Meanwhile, the bulk of the laser output is focused into a larger stimulated Brillouin scattering (SBS) amplifier. The low power beam is directed through the same cell in the opposite direction. The majority of the amplification takes place at the focus which is the fourier transform plane of the mask image. The small holes occupy large area at the focus and thus are preferentially amplified. The amplified output is now imaged onto the multichip module where the holes are drilled. Because of the fourier plane amplifier, only about 1/10th the power of a competitive system is needed. This concept allows less expensive masks to be used in the process and requires much less laser power. 1 fig.

  5. Fourier plane image amplifier

    Science.gov (United States)

    Hackel, Lloyd A.; Hermann, Mark R.; Dane, C. Brent; Tiszauer, Detlev H.

    1995-01-01

    A solid state laser is frequency tripled to 0.3 .mu.m. A small portion of the laser is split off and generates a Stokes seed in a low power oscillator. The low power output passes through a mask with the appropriate hole pattern. Meanwhile, the bulk of the laser output is focused into a larger stimulated Brillouin scattering (SBS) amplifier. The low power beam is directed through the same cell in the opposite direction. The majority of the amplification takes place at the focus which is the fourier transform plane of the mask image. The small holes occupy large area at the focus and thus are preferentially amplified. The amplified output is now imaged onto the multichip module where the holes are drilled. Because of the fourier plane amplifier, only .about.1/10th the power of a competitive system is needed. This concept allows less expensive masks to be used in the process and requires much less laser power.

  6. Optimal operation control of low-voltage grids with a high share of distributed power generation[Dissertation 17063]; Optimierte Betriebsfuehrung von Niederspannungsnetzen mit einem hohen Anteil an dezentraler Erzeugung

    Energy Technology Data Exchange (ETDEWEB)

    Malte, C. T.

    2007-07-01

    targets during development were that the system is able to manage autonomously a selected low-voltage grid including the installed (controllable) grid devices in order to improve power quality as well as to guarantee an economically optimised operation of the grid. Therefore, this system simplifies the integration of more and more DG units into already existing distribution grids and generates at the same time an economical and technical benefit for the concerned grid operator. All essential algorithms for the operation of PoMS have been developed within this PhD thesis. The approaches used in this work have been designed specially to fit for the application in limited low-voltage grid segments, e.g. area grids or industrial grids. It is a big advantage that the algorithms have been designed in such a general and scalable way, so that they can be used in a slightly modified form also for the optimisation of larger grids. From the very beginning the aim of the project was not only to design the system theoretically but also to test it under real conditions in an existing low-voltage grid. For that a fix time slot was given that had to be met under all circumstances. Therefore, the big challenge in the framework of this PhD thesis was not only to develop appropriate algorithms, but also to do this in the given time. With the successful test of PoMS it could be demonstrated that the developed algorithms are practical and allow an economically optimised grid management under real conditions. Further, it could be shown that PoMS can be used even for the operation of permanently islanded grids as well as for the operation of temporary islanded grids due to faults or interruptions on higher voltage levels ('Fault Ride Through'). (author)

  7. On Distortion in Digital Microwave Power Amplifiers

    Science.gov (United States)

    Al-Mozani, Dhamia; Wentzel, Andreas; Heinrich, Wolfgang

    2017-01-01

    In this paper, a first study of distortion in digital power amplifiers (PA) is presented. The work is based on a voltage mode class-S PA with a GaN MMIC for the 900 MHz frequency band. The investigation focuses on the quasi-static amplitude-to-amplitude (AM-AM) and amplitude-to-phase (AM-PM) distortions. Different digital modulation schemes are applied and studied versus output power back-off. This includes two pulse-width modulation (PWM) versions as well as band-pass delta-sigma (BPDS) modulation. The results are verified by measurement data.

  8. 0.6-1.0 V operation set/reset voltage (3 V) generator for three-dimensional integrated resistive random access memory and NAND flash hybrid solid-state drive

    Science.gov (United States)

    Tanaka, Masahiro; Hachiya, Shogo; Ishii, Tomoya; Ning, Sheyang; Tsurumi, Kota; Takeuchi, Ken

    2016-04-01

    A 0.6-1.0 V, 25.9 mm2 boost converter is proposed to generate resistive random access memory (ReRAM) write (set/reset) voltage for three-dimensional (3D) integrated ReRAM and NAND flash hybrid solid-state drive (SSD). The proposed boost converter uses an integrated area-efficient V BUF generation circuit to obtain short ReRAM sector write time, small circuit size, and small energy consumption simultaneously. In specific, the proposed boost converter reduces ReRAM sector write time by 65% compared with a conventional one-stage boost converter (Conventional 1) which uses 1.0 V operating voltage. On the other hand, by using the same ReRAM sector write time, the proposed boost converter reduces 49% circuit area and 46% energy consumption compared with a conventional two-stage boost converter (Conventional 2). In addition, by using the proposed boost converter, the operating voltage, V DD, can be reduced to 0.6 V. The lowest 159 nJ energy consumption can be obtained when V DD is 0.7 V.

  9. 绕线式异步电动机调压节能运行研究%Research on the Operation Performance of Wound Rotor Asynchronous Motors in Voltage Regulation and Energy Saving

    Institute of Scientific and Technical Information of China (English)

    冯韧; 王兵; 侯黎平

    2016-01-01

    Based on the fact that asynchronous motors are characterized with periodic load operation, the optimal voltage of wound rotor asynchronous motors has been determined under no-load and light-load operating modes. With the load ratio a constant, the power factor under the optimal voltage is greater than that under the rated voltage. In light of the features of winding rotor asynchronous motors, a research has been conducted on the side series resistance starting and the capacity of voltage regulation and energy-saving series under series resistance speed regulation. When a resistance of 2 is connected in series with the rotor circuit, an accelerated starting of the motor has thus achieved. With the optimal voltage a constant, the electromagnetic torque remains constant before and after the series resistance has been connected with the rotor circuit. A step-down series resistance speed regulation model of wound rotor asynchronous motors has been set up to work out the relationship between the energy consumption of the rotor turn-on and rotor series resistance under a constant optimal voltage. When the load factor of the motor is in the range of 0%~50%, a certain energy-saving space could be obtained by appropriately reducing the power supply voltage, thus verifying the feasibility of the energy saving operation under the light load rotor series resistance voltage regulation of wound rotor asynchronous motors under the optimal voltage.%根据异步电动机带周期性负载运行的特点,确定了绕线式异步电动机处于空载、轻载运行状态下的最优电压,且维持负载率不变时,其在最优电压下的功率因数大于其在额定电压下的。针对绕线式异步电动机的特性,研究了其转子侧串电阻启动及串电阻调速下调压节能的运行状态,得知当转子回路中串入2电阻时,可加速电机启动,且在最优电压一定时,串电阻前后的电磁转矩恒定。通过搭建绕线式异步电动

  10. InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

    Science.gov (United States)

    Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard

    2009-01-01

    Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

  11. Analysis of the Tesla transformer operation at the first half-wave of the output voltage taking into account ohmic losses

    Science.gov (United States)

    Palchikov, E. I.; Ryabchun, A. M.

    2016-06-01

    The speed and efficiency of the Tesla transformer at the first half-wave of the output voltage are studied as a function of the Q factors of the circuits and their coupling factor. Calculated results and experimental data are considered. It is shown that for given Q factors, there is an optimal value of the coupling factor providing the highest efficiency, which can be calculated and for which designers should work.

  12. Generating all two-MOS-transistor amplifiers leads to new wide-band LNAs

    NARCIS (Netherlands)

    Bruccoleri, F.; Klumperink, Eric A.M.; Nauta, Bram

    This paper presents a methodology that systematically generates all 2-MOS-transistor wide-band amplifiers, assuming that MOSFET is exploited as a voltage-controlled current source. This leads to new circuits. Their gain and noise factor have been compared to well-known wide-band amplifiers. One of

  13. Active Comb Filter Using Operational Transconductance Amplifier

    OpenAIRE

    Rajeev Kumar Ranjan; Surya Prasanna Yalla; Shubham Sorya; Paul, Sajal K.

    2014-01-01

    A new approach for the design of an active comb filter is proposed to remove the selected frequencies of various signals. The proposed filter is based on only OTAs and capacitors, hence suitable for monolithic integrated circuit implementation. The workability of the circuit is tested using PSPICE for test signals of 60, 180, 300, and 420 Hz as in ECG signal. The results are given in the paper and found to agree well with theory.

  14. Active Comb Filter Using Operational Transconductance Amplifier

    Directory of Open Access Journals (Sweden)

    Rajeev Kumar Ranjan

    2014-01-01

    Full Text Available A new approach for the design of an active comb filter is proposed to remove the selected frequencies of various signals. The proposed filter is based on only OTAs and capacitors, hence suitable for monolithic integrated circuit implementation. The workability of the circuit is tested using PSPICE for test signals of 60, 180, 300, and 420 Hz as in ECG signal. The results are given in the paper and found to agree well with theory.

  15. A 300-mV ΔΣ Modulator Using a Gain-Enhanced, Inverter-Based Amplifier for Medical Implant Devices

    Directory of Open Access Journals (Sweden)

    Ali Fazli Yeknami

    2016-03-01

    Full Text Available An ultra-low-voltage low-power switched-capacitor (SC delta-sigma (ΔΣ modulator running at a supply voltage as low as 300 mV is presented for biomedical implant devices, e.g., cardiac pacemakers. To reduce the supply voltage, an inverter-based amplifier is used in the integrators, whose DC gain and gain-bandwidth (GBW are boosted by a simple current-mirror output stage. The full input-feedforward loop topology offers low integrators internal swing, supporting ultra-low-voltage operation. To demonstrate the concept, a second-order loop topology was chosen. The entire modulator operates reliably against process, voltage and temperature (PVT variations from a 300 mV ± 10% supply voltage only, while the switches are driven by a charge pump clock boosting scheme. Designed in a 65 nm CMOS technology and clocked at 256 kHz, the simulation results show that the modulator can achieve a 64.4 dB signal-to-noise ratio (SNR and a 60.7 dB signal-to-noise and distortion ratio (SNDR over a 1.0 kHz signal bandwidth while consuming 0.85 μW of power.

  16. 基于分区电网的多机进相调压效益探析%Voltage Regulation Effects of Leading phase Operation of Multi-generators in District Grids

    Institute of Scientific and Technical Information of China (English)

    韦延方; 卫志农; 孙国强; 王成亮

    2011-01-01

    发电机进相运行是解决系统低谷运行时枢纽点电压偏高的有效手段。针对江苏省2010年实际背景分区电网,选择若干组已投运的机组,以分类分区研究单机进相的调压作用为基础,对多机进相运行进行仿真,分析进相运行对分区关键母线电压的影响和对系统电压的调节作用,并校验多机进相运行时系统的暂态稳定性,探讨分区内多机进相运行的调压能力。%Leading phase operation of generators is an effective method to reduce voltage of the key point which is much high in valley load period.Several generating units in operation in the district grid of Jiangsu province in 2010 were selected as the research targets.Then the research analyzed the influence of leading phase of multi-generators on the key bus voltage based on the voltage regulation effects of leading phase of single-generator in classification and subarea method.The transient stability of leading phase of multi-generators was verified,and the voltage regulation capability of leading phase of multi-generators was analyzed.

  17. NOVEL DESIGN OF A BIOELECTRIC AMPLIFIER WITH MINIMIZED MAGNITUDE AND PHASE ERRORS

    Institute of Scientific and Technical Information of China (English)

    Mashhour Bani Amer; Assistant Professor

    2001-01-01

    A new design of a bioelectric amplifier that has better parameters than conventional designs is presented. The design allows the construction of bioelectric amplifier with improved parameters in terms of common-mode rejection ratio and phase and magnitude errors. The voltage gain is easily adapted to a wide range of biomedical applications. The experimental and simulation results of the designed bioelectric amplifier are also included.

  18. A Mathematical Model of a Simple Amplifier Using a Ferroelectric Transistor

    Science.gov (United States)

    Sayyah, Rana; Hunt, Mitchell; MacLeod, Todd C.; Ho, Fat D.

    2009-01-01

    This paper presents a mathematical model characterizing the behavior of a simple amplifier using a FeFET. The model is based on empirical data and incorporates several variables that affect the output, including frequency, load resistance, and gate-to-source voltage. Since the amplifier is the basis of many circuit configurations, a mathematical model that describes the behavior of a FeFET-based amplifier will help in the integration of FeFETs into many other circuits.

  19. Voltage-Controlled Square/Triangular Wave Generator with Current Conveyors and Switching Diodes

    Directory of Open Access Journals (Sweden)

    Martin Janecek

    2012-12-01

    Full Text Available A novel relaxation oscillator based on integrating the diode-switched currents and Schmitt trigger is presented. It is derived from a known circuit with operational amplifiers where these active elements were replaced by current conveyors. The circuit employs only grounded resistances and capacitance and is suitable for high frequency square and triangular signal generation. Its frequency can be linearly and accurately controlled by voltage that is applied to a high-impedance input. Computer simulation with a model of a manufactured conveyor prototype verifies theoretic assumptions.

  20. Operational Simulation of LC Ladder Filter Using VDTA

    Directory of Open Access Journals (Sweden)

    Praveen Kumar

    2017-01-01

    Full Text Available In this paper, a systematic approach for implementing operational simulation of LC ladder filter using voltage differencing transconductance amplifier is presented. The proposed filter structure uses only grounded capacitor and possesses electronic tunability. PSPICE simulation using 180 nm CMOS technology parameter is carried out to verify the functionality of the presented approach. Experimental verification is also performed through commercially available IC LM13700/NS. Simulations and experimental results are found to be in close agreement with theoretical predictions.