Heat control in HVDC resistive divider by PID and NN controllers

International Nuclear Information System (INIS)

Yilmaz, S.; Dincer, H.; Eksin, I.; Kalenderli, O.

2007-01-01

In this study, a control system is presented that is devised to increase measurement precisions within a prototype high voltage DC resistive divider (HVDC-RD). Since one of the major sources of measurement errors in such devices is the self heating effect, a system controlling the temperature within the high voltage DC resistive divider is devised so that suitable and stable temperature conditions are maintained that, in return, will decrease the measurement errors. The resistive divider system is cooled by oil, and PID and neural network (NN) controllers try to keep the temperature within the prescribed limits. The system to be controlled exhibits a nonlinear character, and therefore, a control approach based on NN controllers is proposed. Thus, a system that can fulfill the various requirements dictated by the designer is constructed. The performance of the NN controller is compared with that of the PID controller developed for the same purpose, and the values of the performance indices indicate the superiority of the NN controller over that of the classical PID controller

Variation of microchannel plate resistance with temperature and applied voltage

International Nuclear Information System (INIS)

Pearson, J.F.; Fraser, G.W.; Whiteley, M.J.

1987-01-01

The resistance of microchannel plate electron multiplier is well known to be a function of both applied voltage and detector temperature. We show that the apparent variation of resistance with bias voltage is simply due to plate temperature increases resulting from resistive heating. (orig.)

Precision High-Voltage DC Dividers and Their Calibration

Czech Academy of Sciences Publication Activity Database

Dragounová, Naděžda

2005-01-01

Roč. 54, č. 5 (2005), s. 1911-1915 ISSN 0018-9456 R&D Projects: GA AV ČR KSK1048102; GA ČR GA202/03/0889 Keywords : calibration * dc voltage * high voltage (HV) Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.665, year: 2005

Study on temperature dependence of output voltage of electrochemical detector for environmental neutrinos

International Nuclear Information System (INIS)

Halim, Md Abdul; Ishibashi, Kenji; Arima, Hidehiko; Terao, Norichika

2006-01-01

An electrochemical detector with biological material has been applied for the detection of neutrinos on the basis of a new hypothesis. The detector consisted of two electrodes with raw silk and purified water, and gave an appreciable output voltage. The reproducibility of the experimental results was as good as 99.4% at temperature of 300 K. The temperature dependence of the voltage of the detector was studied at 280, 290, 300 and 310 K. Among them, the detector at 310 K produced the highest output voltage and reached 104 mV in 16 days, whereas that at 280 K generated the lowest voltage and it was as low as 1.2 mV in 16 days. The detectors working at 290 and 300 K produced the voltages 18 and 57 mV in 16 days, respectively. The output voltages of the detector increased with temperature and were in good agreement in spite of the history of temperature. The internal resistance and electromotive force (internal voltage) of the experimental detector were obtained at each temperature by individual analysis and least square fitting method. It was found that the electromotive force was almost constant for these temperatures while the internal resistance showed a large dependence on temperature. The reduction of the output voltage with temperature is dominated by this behavior of internal resistance. (author)

High Voltage Resistive Divider Based on Cast Microwire in Glass Insulation on 6–24 kV Alternating Current of Commercial Frequency.

Directory of Open Access Journals (Sweden)

Juravleov A.

2008-12-01

Full Text Available It is presented the analysis and description of the construction of the high voltage resistive divider on the base of cast microwire in glass insulation on 6–24 kV alternating current of commercial frequency. It is presented the procedure of compensation of frequency error during the process of fabrication of divides and results of tests of the sample model of the divider as well.

Simulation of temperature field for temperature-controlled radio frequency ablation using a hyperbolic bioheat equation and temperature-varied voltage calibration: a liver-mimicking phantom study.

Science.gov (United States)

Zhang, Man; Zhou, Zhuhuang; Wu, Shuicai; Lin, Lan; Gao, Hongjian; Feng, Yusheng

2015-12-21

This study aims at improving the accuracy of temperature simulation for temperature-controlled radio frequency ablation (RFA). We proposed a new voltage-calibration method in the simulation and investigated the feasibility of a hyperbolic bioheat equation (HBE) in the RFA simulation with longer durations and higher power. A total of 40 RFA experiments was conducted in a liver-mimicking phantom. Four mathematical models with multipolar electrodes were developed by the finite element method in COMSOL software: HBE with/without voltage calibration, and the Pennes bioheat equation (PBE) with/without voltage calibration. The temperature-varied voltage calibration used in the simulation was calculated from an experimental power output and temperature-dependent resistance of liver tissue. We employed the HBE in simulation by considering the delay time τ of 16 s. First, for simulations by each kind of bioheat equation (PBE or HBE), we compared the differences between the temperature-varied voltage-calibration and the fixed-voltage values used in the simulations. Then, the comparisons were conducted between the PBE and the HBE in the simulations with temperature-varied voltage calibration. We verified the simulation results by experimental temperature measurements on nine specific points of the tissue phantom. The results showed that: (1) the proposed voltage-calibration method improved the simulation accuracy of temperature-controlled RFA for both the PBE and the HBE, and (2) for temperature-controlled RFA simulation with the temperature-varied voltage calibration, the HBE method was 0.55 °C more accurate than the PBE method. The proposed temperature-varied voltage calibration may be useful in temperature field simulations of temperature-controlled RFA. Besides, the HBE may be used as an alternative in the simulation of long-duration high-power RFA.

Temperature Stabilized Characterization of High Voltage Power Supplies

CERN Document Server

Krarup, Ole

2017-01-01

High precision measurements of the masses of nuclear ions in the ISOLTRAP experiment relies on an MR-ToF. A major source of noise and drift is the instability of the high voltage power supplies employed. Electrical noise and temperature changes can broaden peaks in time-of-flight spectra and shift the position of peaks between runs. In this report we investigate how the noise and drift of high-voltage power supplies can be characterized. Results indicate that analog power supplies generally have better relative stability than digitally controlled ones, and that the high temperature coefficients of all power supplies merit efforts to stabilize them.

Prediction of windings temperature rise in induction motors supplied with distorted voltage

Energy Technology Data Exchange (ETDEWEB)

Gnacinski, P. [Gdynia Maritime University, Department of Ship Electrical Power Engineering, Morska Street 83, 81-225 Gdynia (Poland)

2008-04-15

One of the features of ship power systems is a different level and intensity of disturbances appearing during routine operation - the rms voltage value and frequency deviation, voltage unbalance and waveform voltage distortion. As a result, marine induction machines are exposed to overheating due to the lowered voltage quality. This paper is devoted to windings temperature rise prediction in marine induction cage machines supplied with distorted voltage, which means real voltage conditions. The proposed method of prediction does not require detailed knowledge of the thermal properties of a machine. Although the method was developed for marine induction motors, it is applicable for industry machines supplied with distorted voltage. It can also be generalized and used for estimation of the steady state windings temperature rise of any electrical machinery in various work conditions. (author)

Prediction of windings temperature rise in induction motors supplied with distorted voltage

International Nuclear Information System (INIS)

Gnacinski, P.

2008-01-01

One of the features of ship power systems is a different level and intensity of disturbances appearing during routine operation - the rms voltage value and frequency deviation, voltage unbalance and waveform voltage distortion. As a result, marine induction machines are exposed to overheating due to the lowered voltage quality. This paper is devoted to windings temperature rise prediction in marine induction cage machines supplied with distorted voltage, which means real voltage conditions. The proposed method of prediction does not require detailed knowledge of the thermal properties of a machine. Although the method was developed for marine induction motors, it is applicable for industry machines supplied with distorted voltage. It can also be generalized and used for estimation of the steady state windings temperature rise of any electrical machinery in various work conditions

Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

Science.gov (United States)

Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

2012-01-01

We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 C. The previously observed maximum drift of +/- 10 mV of the reference offset voltage at 600 C was reduced to within +/- 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 C.

Voltage and temperature dependence of the grain boundary tunneling magnetoresistance in manganites

OpenAIRE

Hoefener, C.; Philipp, J. B.; Klein, J.; Alff, L.; Marx, A.; Buechner, B.; Gross, R.

2000-01-01

We have performed a systematic analysis of the voltage and temperature dependence of the tunneling magnetoresistance (TMR) of grain boundaries (GB) in the manganites. We find a strong decrease of the TMR with increasing voltage and temperature. The decrease of the TMR with increasing voltage scales with an increase of the inelastic tunneling current due to multi-step inelastic tunneling via localized defect states in the tunneling barrier. This behavior can be described within a three-current...

Electrical treeing behaviors in silicone rubber under an impulse voltage considering high temperature

Science.gov (United States)

Yunxiao, ZHANG; Yuanxiang, ZHOU; Ling, ZHANG; Zhen, LIN; Jie, LIU; Zhongliu, ZHOU

2018-05-01

In this paper, work was conducted to reveal electrical tree behaviors (initiation and propagation) of silicone rubber (SIR) under an impulse voltage with high temperature. Impulse frequencies ranging from 10 Hz to 1 kHz were applied and the temperature was controlled between 30 °C and 90 °C. Experimental results show that tree initiation voltage decreases with increasing pulse frequency, and the descending amplitude is different in different frequency bands. As the pulse frequency increases, more frequent partial discharges occur in the channel, increasing the tree growth rate and the final shape intensity. As for temperature, the initiation voltage decreases and the tree shape becomes denser as the temperature gets higher. Based on differential scanning calorimetry results, we believe that partial segment relaxation of SIR at high temperature leads to a decrease in the initiation voltage. However, the tree growth rate decreases with increasing temperature. Carbonization deposition in the channel under high temperature was observed under microscope and proven by Raman analysis. Different tree growth models considering tree channel characteristics are proposed. It is believed that increasing the conductivity in the tree channel restrains the partial discharge, holding back the tree growth at high temperature.

Temperature and Voltage Coupling to Channel Opening in Transient Receptor Potential Melastatin 8 (TRPM8)*♦

Science.gov (United States)

Raddatz, Natalia; Castillo, Juan P.; Gonzalez, Carlos; Alvarez, Osvaldo; Latorre, Ramon

2014-01-01

Expressed in somatosensory neurons of the dorsal root and trigeminal ganglion, the transient receptor potential melastatin 8 (TRPM8) channel is a Ca2+-permeable cation channel activated by cold, voltage, phosphatidylinositol 4,5-bisphosphate, and menthol. Although TRPM8 channel gating has been characterized at the single channel and macroscopic current levels, there is currently no consensus regarding the extent to which temperature and voltage sensors couple to the conduction gate. In this study, we extended the range of voltages where TRPM8-induced ionic currents were measured and made careful measurements of the maximum open probability the channel can attain at different temperatures by means of fluctuation analysis. The first direct measurements of TRPM8 channel temperature-driven conformational rearrangements provided here suggest that temperature alone is able to open the channel and that the opening reaction is voltage-independent. Voltage is a partial activator of TRPM8 channels, because absolute open probability values measured with fully activated voltage sensors are less than 1, and they decrease as temperature rises. By unveiling the fast temperature-dependent deactivation process, we show that TRPM8 channel deactivation is well described by a double exponential time course. The fast and slow deactivation processes are temperature-dependent with enthalpy changes of 27.2 and 30.8 kcal mol−1. The overall Q10 for the closing reaction is about 33. A three-tiered allosteric model containing four voltage sensors and four temperature sensors can account for the complex deactivation kinetics and coupling between voltage and temperature sensor activation and channel opening. PMID:25352597

A temperature monitor circuit with small voltage sensitivity using a topology-reconfigurable ring oscillator

Science.gov (United States)

Kishimoto, Tadashi; Ishihara, Tohru; Onodera, Hidetoshi

2018-04-01

In this paper, we propose a temperature monitor circuit that exhibits a small supply voltage sensitivity adopting a circuit topology of a reconfigurable ring oscillator. The circuit topology of the monitor is crafted such that the oscillation frequency is determined by the amount of subthreshold leakage current, which has an exponential dependence on temperature. Another important characteristic of the monitor is its small supply voltage sensitivity. The measured oscillation frequency of a test chip fabricated in a 65 nm CMOS process varies only 2.6% under a wide range of supply voltages from 0.4 to 1.0 V at room temperature. The temperature estimation error ranges from -0.3 to 0.4 °C over a temperature range of 10 to 100 °C.

Design and study of photomultiplier pulse-shaping amplifier powered by the current flowing through a voltage divider

International Nuclear Information System (INIS)

Vladimir Popov

2003-01-01

A new version of Photomultiplier Tube (PMT) pulse amplifier, entirely powered by the current flowing through the base voltage divider, was designed and tested. This amplifier was designed for application in the JLAB G0 Experiment E00-006 as a part of high voltage base for XP2262 Photonis PMT. According to JLAB G0 experiment requirement, these PMT's operate with plastic scintillators at high counting rate (about MHz). Tests in JLAB experimental Hall C indicate that low energy gamma background cause up to 0.1 mA of PMT average anode current (without amplifier). At this radiation condition, PMT gain decreases by 50% within about 1 month of operation. The amplifier needs to reduce PMT anode current and to shape PMT anode pulse prior to sending it through a long cable line (more then 400 ft of RG-213 and RG-58 coax cables). Shaping of the PMT output pulse helps to reduce attenuation effect of the long cable line without significant reduction of timing accuracy. The results of this study of designed amplifier and PMT plus amplifier system are presented

Influence of dump voltage and allowable temperature rise on stabilizer requirements in superconducting coils

International Nuclear Information System (INIS)

Schwenterly, S.W.

1988-01-01

A superconducting winding must have enough stabilizer to satisfy two sets of criteria. During normal operation, the amount of stabilizer must be large enough either to make the coil unconditionally stable or to give a certain desired stability margin. Once a dump occurs, the amount of stabilizer must be large enough to carry the current without generating excessive dump voltages or allowing the winding to exceed a certain maximum temperature (and maximum pressure, in the case of force-cooled coils). The voltage criterion often dominates for very large coil systems, but it is frequently ignored in initial design studies. This paper gives some simple relations between the dump voltage and the stored energy, temperature rise, and coil geometry that are useful in scooping the required amount of stabilizer. Comparison with some recently proposed fusion magnet system designs indicates that excessive dump voltages could result in some cases. High-temperature superconductors may require more stabilizer than the conventional alloys. Calculations with simple model coil systems indicate how trade-offs between various coil parameters affect the dump voltage. 12 refs., 1 fig., 1 tab

Z80 based voltage and temperature monitor for the Main Ring control crate: the CC48 card

International Nuclear Information System (INIS)

Seino, K.

1982-06-01

Several years ago, there seemed to be a need to monitor the power supply voltages and temperatures in the three bay racks of the Main Ring service buildings. A few years ago, another engineer seemed to have done a preliminary design using analog voltage comparators. In late 1979, it was proposed to use a microprocessor instead of analog voltage comparators. It was dramatic that all the people at a meeting were excited about the idea and unanimously approved the project. The author can remember some of the reasons why they were so enthusiastic about the idea at the time, i.e., (1) it was new to have microprocessor based cards on the Main Ring control system, (2) programmable alarm limits were preferred to resistor dividers or potentiometers with analog voltage comparators, (3) it was the first to try the communication between a host computer and distributed intelligent cards. The author started the design on the CC48 in January, 1980 and completed in April, 1980. We had the prototype card working in July, 1980 and tested the card on the system in September, 1980. Seven CC48s of the pilot production were installed in July, 1981. We mass-produced 35 more cards and finished installing them around the Main Ring in May, 1982. The author talks about the hardware, software and operation on the CC48 card, and he will make some remarks on his experience on the project

An optical fiber Bragg grating and piezoelectric ceramic voltage sensor

Science.gov (United States)

Yang, Qing; He, Yanxiao; Sun, Shangpeng; Luo, Mandan; Han, Rui

2017-10-01

Voltage measurement is essential in many fields like power grids, telecommunications, metallurgy, railways, and oil production. A voltage-sensing unit, consisting of fiber Bragg gratings (FBGs) and piezoelectric ceramics, based on which an optical over-voltage sensor was proposed and fabricated in this paper. No demodulation devices like spectrometer or Fabry-Perot filter were needed to gain the voltage signal, and a relatively large sensing frequency range was acquired in this paper; thus, the cost of the sensing system is more acceptable in engineering application. The voltage to be measured was directly applied to the piezoelectric ceramic, and deformation of the ceramics and the grating would be caused because of the inverse piezoelectric effect. With a reference grating, the output light intensity change will be caused by the FBG center wavelength change; thus, the relationship between the applied voltage and the output light intensity was established. Validation of the sensor was accomplished in the frequency range from 50 Hz to 20 kHz and switching impulse waves with a test platform; good linearity of the input-output characteristic was achieved. A temperature validation test was completed, showing that the sensor maintains good temperature stability. Experimental results show that the optical over-voltage sensor can be used for voltage monitoring, and if applied with a voltage divider, the sensor can be used to measure high voltage.

An optical fiber Bragg grating and piezoelectric ceramic voltage sensor.

Science.gov (United States)

Yang, Qing; He, Yanxiao; Sun, Shangpeng; Luo, Mandan; Han, Rui

2017-10-01

Voltage measurement is essential in many fields like power grids, telecommunications, metallurgy, railways, and oil production. A voltage-sensing unit, consisting of fiber Bragg gratings (FBGs) and piezoelectric ceramics, based on which an optical over-voltage sensor was proposed and fabricated in this paper. No demodulation devices like spectrometer or Fabry-Perot filter were needed to gain the voltage signal, and a relatively large sensing frequency range was acquired in this paper; thus, the cost of the sensing system is more acceptable in engineering application. The voltage to be measured was directly applied to the piezoelectric ceramic, and deformation of the ceramics and the grating would be caused because of the inverse piezoelectric effect. With a reference grating, the output light intensity change will be caused by the FBG center wavelength change; thus, the relationship between the applied voltage and the output light intensity was established. Validation of the sensor was accomplished in the frequency range from 50 Hz to 20 kHz and switching impulse waves with a test platform; good linearity of the input-output characteristic was achieved. A temperature validation test was completed, showing that the sensor maintains good temperature stability. Experimental results show that the optical over-voltage sensor can be used for voltage monitoring, and if applied with a voltage divider, the sensor can be used to measure high voltage.

Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment

Energy Technology Data Exchange (ETDEWEB)

Erofeev, E. V., E-mail: erofeev@micran.ru [Tomsk State University of Control Systems and Radioelectronics, Research Institute of Electrical-Communication Systems (Russian Federation); Fedin, I. V.; Kutkov, I. V. [Research and Production Company “Micran” (Russian Federation); Yuryev, Yu. N. [National Research Tomsk Polytechnic University, Institute of Physics and Technology (Russian Federation)

2017-02-15

High-electron-mobility transistors (HEMTs) based on AlGaN/GaN epitaxial heterostructures are a promising element base for the fabrication of high voltage electronic devices of the next generation. This is caused by both the high mobility of charge carriers in the transistor channel and the high electric strength of the material, which makes it possible to attain high breakdown voltages. For use in high-power switches, normally off-mode GaN transistors operating under enhancement conditions are required. To fabricate normally off GaN transistors, one most frequently uses a subgate region based on magnesium-doped p-GaN. However, optimization of the p-GaN epitaxial-layer thickness and the doping level makes it possible to attain a threshold voltage of GaN transistors close to V{sub th} = +2 V. In this study, it is shown that the use of low temperature treatment in an atomic hydrogen flow for the p-GaN-based subgate region before the deposition of gate-metallization layers makes it possible to increase the transistor threshold voltage to V{sub th} = +3.5 V. The effects under observation can be caused by the formation of a dipole layer on the p-GaN surface induced by the effect of atomic hydrogen. The heat treatment of hydrogen-treated GaN transistors in a nitrogen environment at a temperature of T = 250°C for 12 h reveals no degradation of the transistor’s electrical parameters, which can be caused by the formation of a thermally stable dipole layer at the metal/p-GaN interface as a result of hydrogenation.

Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment

International Nuclear Information System (INIS)

Erofeev, E. V.; Fedin, I. V.; Kutkov, I. V.; Yuryev, Yu. N.

2017-01-01

High-electron-mobility transistors (HEMTs) based on AlGaN/GaN epitaxial heterostructures are a promising element base for the fabrication of high voltage electronic devices of the next generation. This is caused by both the high mobility of charge carriers in the transistor channel and the high electric strength of the material, which makes it possible to attain high breakdown voltages. For use in high-power switches, normally off-mode GaN transistors operating under enhancement conditions are required. To fabricate normally off GaN transistors, one most frequently uses a subgate region based on magnesium-doped p-GaN. However, optimization of the p-GaN epitaxial-layer thickness and the doping level makes it possible to attain a threshold voltage of GaN transistors close to V_t_h = +2 V. In this study, it is shown that the use of low temperature treatment in an atomic hydrogen flow for the p-GaN-based subgate region before the deposition of gate-metallization layers makes it possible to increase the transistor threshold voltage to V_t_h = +3.5 V. The effects under observation can be caused by the formation of a dipole layer on the p-GaN surface induced by the effect of atomic hydrogen. The heat treatment of hydrogen-treated GaN transistors in a nitrogen environment at a temperature of T = 250°C for 12 h reveals no degradation of the transistor’s electrical parameters, which can be caused by the formation of a thermally stable dipole layer at the metal/p-GaN interface as a result of hydrogenation.

Fabrication and voltage divider operation of a T flip-flop using high-Tc interface-engineered Josephson junctions

International Nuclear Information System (INIS)

Kim, JunHo; Kim, Sang Hyeob; Sung, Gun Yong

2002-01-01

We designed and fabricated a rapid-single-flux-quantum T flip-flop (TFF) with high-T c interface-engineered Josephson junctions. Y 1 Ba 2 Cu 3 O 7-d and Sr 2 AlTaO 6 were deposited for the superconducting layer and the insulating layer, respectively. The Josephson junction was formed through an interface treatment process using Ar ion milling and vacuum annealing. We simulated a TFF circuit and designed a physical layout using WRspice and Xic. The fabricated TFF has a minimum junction width of 3 μ m. Through the measurement of the voltage divider operation, the maximum operation frequency was estimated to be 53 GHz at 22 K and 106 GHz at 12 K. (author)

Unfolding of a Temperature-Sensitive Domain Controls Voltage-Gated Channel Activation.

Science.gov (United States)

Arrigoni, Cristina; Rohaim, Ahmed; Shaya, David; Findeisen, Felix; Stein, Richard A; Nurva, Shailika Reddy; Mishra, Smriti; Mchaourab, Hassane S; Minor, Daniel L

2016-02-25

Voltage-gated ion channels (VGICs) are outfitted with diverse cytoplasmic domains that impact function. To examine how such elements may affect VGIC behavior, we addressed how the bacterial voltage-gated sodium channel (BacNa(V)) C-terminal cytoplasmic domain (CTD) affects function. Our studies show that the BacNa(V) CTD exerts a profound influence on gating through a temperature-dependent unfolding transition in a discrete cytoplasmic domain, the neck domain, proximal to the pore. Structural and functional studies establish that the BacNa(V) CTD comprises a bi-partite four-helix bundle that bears an unusual hydrophilic core whose integrity is central to the unfolding mechanism and that couples directly to the channel activation gate. Together, our findings define a general principle for how the widespread four-helix bundle cytoplasmic domain architecture can control VGIC responses, uncover a mechanism underlying the diverse BacNa(V) voltage dependencies, and demonstrate that a discrete domain can encode the temperature-dependent response of a channel. Copyright © 2016 Elsevier Inc. All rights reserved.

Measurements of Voltage Harmonics in 400 kV Transmission Network

Directory of Open Access Journals (Sweden)

Ryszard Pawełek

2014-06-01

Full Text Available The paper deals with the analysis of voltage harmonics measurements performed in the 400 kV transmission network. The voltage was measured by means of three transducers: resistive voltage divider, inductive measuring transformer and capacitive voltage measuring transformer. Instrument errors were estimated for measuring transformers with reference to the harmonic values obtained from the voltage divider.

Modification of Modulating Anode Voltage Supply of Klystron for PEFP 20 MeV Linac

International Nuclear Information System (INIS)

Kim, Dae Il; Kwon, Hyeok Jung; Kim, Han Sung; Cho, Yong Sub

2011-01-01

The klystron (TH2089F, THALES) for PEFP 20MeV proton linear accelerator has a triode type electron gun and the modulating anode voltage should be supplied. The klystron has gone through some modification in the modulating anode voltage supply circuit. Formerly, the mod-anode voltage was supplied by using the tetrode-controlled voltage divider. This system requires addition power supply for the tetrode and the grid control circuit. Recently we modified the mod-anode supply from the tetrode-controlled voltage divider to a resistive voltage divider. The resistors for the previous voltage divider were installed at a supporter with high voltage bushing structure next to the klystron. In the previous system, the resistors were exposed to the air and their size was very bulky, length of which was about 1m long. To reduce the space occupied by the voltage divider and to improve the electrical insulation performance, the voltage dividing resistors were moved into the oil tank of the klystron. During the operation of the 20 MeV linac, the klystron parameters were measured. In this paper, the modification of the voltage divider and the operational characteristics of the klystron with modified voltage divider circuit are presented

High-temperature performance of MoS{sub 2} thin-film transistors: Direct current and pulse current-voltage characteristics

Energy Technology Data Exchange (ETDEWEB)

Jiang, C.; Samnakay, R.; Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory (NDL), Department of Electrical Engineering, Bourns College of Engineering, University of California—Riverside, Riverside, California 92521 (United States); Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program, University of California—Riverside, Riverside, California 92521 (United States); Rumyantsev, S. L. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Ioffe Physical-Technical Institute, St. Petersburg 194021 (Russian Federation); Shur, M. S. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

2015-02-14

We report on fabrication of MoS{sub 2} thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS{sub 2} devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS{sub 2} thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS{sub 2} thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS{sub 2} thin-film transistors in extreme-temperature electronics and sensors.

Ultra-low power high temperature and radiation hard complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) voltage reference.

Science.gov (United States)

Boufouss, El Hafed; Francis, Laurent A; Kilchytska, Valeriya; Gérard, Pierre; Simon, Pascal; Flandre, Denis

2013-12-13

This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40-200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si) performed at three different temperatures (room temperature, 100 °C and 200 °C). The maximum drift of the reference voltage V(REF) depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μW at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of V(REF) and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

Voltage regulator for generator

Energy Technology Data Exchange (ETDEWEB)

Naoi, K

1989-01-17

It is an object of this invention to provide a voltage regulator for a generator charging a battery, wherein even if the ambient temperature at the voltage regulator rises abnormally high, possible thermal breakage of the semiconductor elements constituting the voltage regulator can be avoided. A feature of this invention is that the semiconductor elements can be protected from thermal breakage, even at an abnormal ambient temperature rise at the voltage regulator for the battery charging generator, by controlling a maximum conduction ratio of a power transistor in the voltage regulator in accordance with the temperature at the voltage regulator. This is achieved through a switching device connected in series to the field coil of the generator and adapted to be controlled in accordance with an output voltage of the generator and the ambient temperature at the voltage regulator. 6 figs.

Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor

International Nuclear Information System (INIS)

Onufriyev, Valery V.

2001-01-01

It is well known that the rise of arc from the dense glow discharge is connected with the thermion and secondary processes on the cathode surface (Granovsky, 1971; Leob, 1953; Engel, 1935). First model of breakdown of the cathode layer is connected with the increase of the cathode temperature in consequence of the ion bombardment that leads to the grows its thermo-emissive current. Other model shows the main role of the secondary effects on the cathode surface-the increase of the secondary ion emission coefficient--γ i with the grows of glow discharge voltage. But the author of this investigation work of breakdown in Cs vapor (a transmission the glow discharge into self-maintaining arc discharge) discovered the next peculiarity: the value of breakdown voltage is constant when the values of vapor temperature (its pressure p cs ) and cathode temperature T k is constant too (U b =constant with T k =constant and p cs =constant) and it is not a statistical value (Onufryev, Grishin, 1996) (that was observed in gas glow discharges other authors (Granovsky, 1971; Leob, 1953; Engel, 1935)). The investigations of thermion high voltage high temperature diode (its breakdown characteristics in closed state and voltage-current characteristics in disclosed state) showed that the value of the breakdown voltage is depended on the vapor pressure in inter-electrode gap (IEG)-p cs and cathode temperature-T k and is independent on IEG length--Δ ieg . On this base it was settled that the main role in transition of glow discharge to self-maintaining arc discharge plays an ion cathode layer but more exactly--the region of excited atoms--''Aston glow.''

Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor

Science.gov (United States)

Onufriyev, Valery. V.

2001-02-01

It is well known that the rise of arc from the dense glow discharge is connected with the thermion and secondary processes on the cathode surface (Granovsky, 1971; Leob, 1953; Engel, 1935). First model of breakdown of the cathode layer is connected with the increase of the cathode temperature in consequence of the ion bombardment that leads to the grows its thermo-emissive current. Other model shows the main role of the secondary effects on the cathode surface-the increase of the secondary ion emission coefficient-γi with the grows of glow discharge voltage. But the author of this investigation work of breakdown in Cs vapor (a transmission the glow discharge into self-maintaining arc discharge) discovered the next peculiarity: the value of breakdown voltage is constant when the values of vapor temperature (its pressure pcs) and cathode temperature Tk is constant too (Ub=constant with Tk=constant and pcs=constant) and it is not a statistical value (Onufryev, Grishin, 1996) (that was observed in gas glow discharges other authors (Granovsky, 1971; Leob, 1953; Engel, 1935)). The investigations of thermion high voltage high temperature diode (its breakdown characteristics in closed state and voltage-current characteristics in disclosed state) showed that the value of the breakdown voltage is depended on the vapor pressure in inter-electrode gap (IEG)-pcs and cathode temperature-Tk and is independent on IEG length-Δieg. On this base it was settled that the main role in transition of glow discharge to self-maintaining arc discharge plays an ion cathode layer but more exactly-the region of excited atoms-``Aston glow.'' .

Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode

International Nuclear Information System (INIS)

Wang Yongshun; Rui Li; Adnan Ghaffar; Wang Zaixing; Liu Chunjuan

2015-01-01

In order to improve the reverse voltage capacity and low junction temperature characteristics of the traditional silicon-based Schottky diode, a Schottky diode with high reverse voltage capacity and high junction temperature was fabricated using ion implantation, NiPt60 sputtering, silicide-forming and other major technologies on an N-type silicon epitaxial layer of 10.6–11.4 μm and (2.2–2.4) × 10 15 cm −3 doping concentration. The measurement results show that the junction temperature of the Schottky diode fabricated can reach 175 °C, that is 50 °C higher than that of the traditional one; the reverse voltage capacity V R can reach 112 V, that is 80 V higher than that of the traditional one; the leakage current is only 2 μA and the forward conduction voltage drop is V F = 0.71 V at forward current I F = 3 A. (semiconductor devices)

A 5 V-to-3.3 V CMOS Linear Regulator with Three-Output Temperature-Independent Reference Voltages

Directory of Open Access Journals (Sweden)

San-Fu Wang

2016-01-01

Full Text Available This paper presents a 5 V-to-3.3 V linear regulator circuit, which uses 3.3 V CMOS transistors to replace the 5 V CMOS transistors. Thus, the complexity of the manufacturing semiconductor process can be improved. The proposed linear regulator is implemented by cascode architecture, which requires three different reference voltages as the bias voltages of its circuit. Thus, the three-output temperature-independent reference voltage circuit is proposed, which provides three accurate reference voltages simultaneously. The three-output temperature-independent reference voltages also can be used in other circuits of the chip. By using the proposed temperature-independent reference voltages, the proposed linear regulator can provide an accurate output voltage, and it is suitable for low cost, small size, and highly integrated system-on-chip (SoC applications. Moreover, the proposed linear regulator uses the cascode technique, which improves both the gain performance and the isolation performance. Therefore, the proposed linear regulator has a good performance in reference voltage to output voltage isolation. The voltage variation of the linear regulator is less than 2.153% in the temperature range of −40°C–120°C, and the power supply rejection ratio (PSRR is less than −42.8 dB at 60 Hz. The regulator can support 0~200 mA output current. The core area is less than 0.16 mm2.

System for improving measurement accuracy of transducer by measuring transducer temperature and resistance change using thermoelectric voltages

Science.gov (United States)

Anderson, Karl F. (Inventor); Parker, Allen R., Jr. (Inventor)

1993-01-01

A constant current loop measuring system measures a property including the temperature of a sensor responsive to an external condition being measured. The measuring system includes thermocouple conductors connected to the sensor, sensing first and second induced voltages responsive to the external condition. In addition, the measuring system includes a current generator and reverser generating a constant current, and supplying the constant current to the thermocouple conductors in forward and reverse directions generating first and second measured voltages, and a determining unit receiving the first and second measured voltages from the current generator and reverser, and determining the temperature of the sensor responsive to the first and second measured voltages.

Monitoring operating temperature and supply voltage in achieving high system dependability

NARCIS (Netherlands)

Khan, M.A.; Kerkhoff, Hans G.

2013-01-01

System dependability being a set of number of attributes, of which the important reliability, heavily depends on operating temperature and supply voltage. Any change beyond the designed specifications may change the system performance and could result in system reliability and hence dependability

In-situ monitoring of internal local temperature and voltage of proton exchange membrane fuel cells.

Science.gov (United States)

Lee, Chi-Yuan; Fan, Wei-Yuan; Hsieh, Wei-Jung

2010-01-01

The distribution of temperature and voltage of a fuel cell are key factors that influence performance. Conventional sensors are normally large, and are also useful only for making external measurements of fuel cells. Centimeter-scale sensors for making invasive measurements are frequently unable to accurately measure the interior changes of a fuel cell. This work focuses mainly on fabricating flexible multi-functional microsensors (for temperature and voltage) to measure variations in the local temperature and voltage of proton exchange membrane fuel cells (PEMFC) that are based on micro-electro-mechanical systems (MEMS). The power density at 0.5 V without a sensor is 450 mW/cm(2), and that with a sensor is 426 mW/cm(2). Since the reaction area of a fuel cell with a sensor is approximately 12% smaller than that without a sensor, but the performance of the former is only 5% worse.

Semi-empirical model for the threshold voltage of a double implanted MOSFET and its temperature dependence

Energy Technology Data Exchange (ETDEWEB)

Arora, N D

1987-05-01

A simple and accurate semi-empirical model for the threshold voltage of a small geometry double implanted enhancement type MOSFET, especially useful in a circuit simulation program like SPICE, has been developed. The effect of short channel length and narrow width on the threshold voltage has been taken into account through a geometrical approximation, which involves parameters whose values can be determined from the curve fitting experimental data. A model for the temperature dependence of the threshold voltage for the implanted devices has also been presented. The temperature coefficient of the threshold voltage was found to change with decreasing channel length and width. Experimental results from various device sizes, both short and narrow, show very good agreement with the model. The model has been implemented in SPICE as part of the complete dc model.

In-situ Monitoring of Internal Local Temperature and Voltage of Proton Exchange Membrane Fuel Cells

Directory of Open Access Journals (Sweden)

Chi-Yuan Lee

2010-06-01

Full Text Available The distribution of temperature and voltage of a fuel cell are key factors that influence performance. Conventional sensors are normally large, and are also useful only for making external measurements of fuel cells. Centimeter-scale sensors for making invasive measurements are frequently unable to accurately measure the interior changes of a fuel cell. This work focuses mainly on fabricating flexible multi-functional microsensors (for temperature and voltage to measure variations in the local temperature and voltage of proton exchange membrane fuel cells (PEMFC that are based on micro-electro-mechanical systems (MEMS. The power density at 0.5 V without a sensor is 450 mW/cm2, and that with a sensor is 426 mW/cm2. Since the reaction area of a fuel cell with a sensor is approximately 12% smaller than that without a sensor, but the performance of the former is only 5% worse.

First high-voltage measurements using Ca{sup +} ions at the ALIVE experiment

Energy Technology Data Exchange (ETDEWEB)

König, K., E-mail: kkoenig@ikp.tu-darmstadt.de [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Geppert, Ch. [Universität Mainz, Institut für Kernchemie (Germany); Krämer, J.; Maaß, B. [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Otten, E. W. [Universität Mainz, Institut für Physik (Germany); Ratajczyk, T.; Nörtershäuser, W. [Technische Universität Darmstadt, Institut für Kernphysik (Germany)

2017-11-15

Many physics experiments depend on accurate high-voltage measurements to determine for example the exact retardation potential of an electron spectrometer as in the KATRIN experiment or the acceleration voltage of the ions at ISOL facilities. Until now only precision high-voltage dividers can be used to measure voltages up to 65 kV with an accuracy of 1 ppm. However, these dividers need frequent calibration and cross-checking and the direct traceability is not given. In this article we will describe the status of an experiment which aims to measure high voltages using collinear laser spectroscopy and which has the potential to provide a high-voltage standard and hence, a calibration source for precision high-voltage dividers on the 1 ppm level.

The current–voltage and capacitance–voltage characteristics at high temperatures of Au Schottky contact to n-type GaAs

Energy Technology Data Exchange (ETDEWEB)

Özerli, Halil; Karteri, İbrahim [Department of Materials Science And Engineering, Kahramanmaraş Sütçü İmam University, 46100 Kahramanmaraş (Turkey); Karataş, Şükrü, E-mail: skaratas@ksu.edu.tr [Department of Materials Science And Engineering, Kahramanmaraş Sütçü İmam University, 46100 Kahramanmaraş (Turkey); Department of Physics, Kahramanmaraş Sütçü İmam University, 46100 Kahramanmaraş (Turkey); Altindal, Şemsettin [Department of Physics, Gazi University, 06100 Ankara (Turkey)

2014-05-01

Highlights: • The electronic parameters of the diode under temperature were investigated. • The barrier heights have a Gaussian distribution. • Au/n-GaAs diode exhibits a rectification behavior. - Abstract: We have investigated the temperature-dependent current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs) in the temperature range of 280–415 K. The barrier height for the Au/n-type GaAs SBDs from the I–V and C–V characteristics have varied from 0.901 eV to 0.963 eV (I–V) and 1.234 eV to 0.967 eV (C–V), and the ideality factor (n) from 1.45 to 1.69 in the temperature range 280–415 K. The conventional Richardson plots are found to be linear in the temperature range measured. Both the ln(I{sub 0}/T{sup 2}) versus (kT){sup −1} and ln(I{sub 0}/T{sup 2}) versus (nkT){sup −1} plots gives a straight line corresponding to activation energies 0.773 eV and 0.870 eV, respectively. A Φ{sub b0} versus 1/T plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and values of Φ{sup ¯}{sub b0} = 1.071 eV and σ{sub 0} = 0.094 V for the mean BH and zero-bias standard deviation have been obtained from this plot.

The current–voltage and capacitance–voltage characteristics at high temperatures of Au Schottky contact to n-type GaAs

International Nuclear Information System (INIS)

Özerli, Halil; Karteri, İbrahim; Karataş, Şükrü; Altindal, Şemsettin

2014-01-01

Highlights: • The electronic parameters of the diode under temperature were investigated. • The barrier heights have a Gaussian distribution. • Au/n-GaAs diode exhibits a rectification behavior. - Abstract: We have investigated the temperature-dependent current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs) in the temperature range of 280–415 K. The barrier height for the Au/n-type GaAs SBDs from the I–V and C–V characteristics have varied from 0.901 eV to 0.963 eV (I–V) and 1.234 eV to 0.967 eV (C–V), and the ideality factor (n) from 1.45 to 1.69 in the temperature range 280–415 K. The conventional Richardson plots are found to be linear in the temperature range measured. Both the ln(I 0 /T 2 ) versus (kT) −1 and ln(I 0 /T 2 ) versus (nkT) −1 plots gives a straight line corresponding to activation energies 0.773 eV and 0.870 eV, respectively. A Φ b0 versus 1/T plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and values of Φ ¯ b0 = 1.071 eV and σ 0 = 0.094 V for the mean BH and zero-bias standard deviation have been obtained from this plot

Forward voltage short-pulse technique for measuring high power laser array junction temperature

Science.gov (United States)

Meadows, Byron L. (Inventor); Amzajerdian, Frazin (Inventor); Barnes, Bruce W. (Inventor); Baker, Nathaniel R. (Inventor)

2012-01-01

The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

Quasi-resonant converter with divided resonant capacitor on primary and secondary side

OpenAIRE

Shiroyama, Hironobu; Matsuo, Hirofumi; Ishizuka, Yoichi

2009-01-01

This paper presents a quasi-resonant converter with divided resonant capacitor on primary and secondary side of the isolation transformer. A conventional quasi-resonant converter using flyback topology can realize soft switching with simple circuit. However, relatively large surge voltage is generated in the switching device. To suppress such surge voltage, resonant capacitor is divided on primary side and secondary side in the proposed converter. In case of prototype 95W converter, the volta...

Effect of applied DC voltages and temperatures on space charge behaviour of multi-layer oil-paper insulation

Energy Technology Data Exchange (ETDEWEB)

Tang Chao; Liao Ruijin [The State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University (China); Chen, G [School of Electronics and Computer Science, University of Southampton (United Kingdom); Fu, M, E-mail: tangchao_1981@163.co [AVERA T and D Technology Centre, Stafford (United Kingdom)

2009-08-01

In this paper, space charge in a multi-layer oil-paper insulation system was investigated using the pulsed electroacoustic (PEA) technique. A series of measurements had been carried following subjection of the insulation system to different applied voltages and different temperatures. Charge behaviours in the insulation system were analyzed and the influence of temperature on charge dynamics was discussed. The test results shows that homocharge injection takes place under all the test conditions, the applied DC voltage mainly affects the amount of space charge, while the temperature has greater influence on the distribution and mobility of space charge inside oil-paper samples.

Elimination of bus voltage impact on temperature sensitive electrical parameter during turn-on transition for junction temperature estimation of high-power IGBT modules

DEFF Research Database (Denmark)

Luo, Haoze; Iannuzzo, Francesco; Blaabjerg, Frede

2017-01-01

Junction temperature is of great importance to safe operating area of IGBT modules. Various information of the IGBT operating state is reflected on electrical characteristics during turn-on transient. A unified extraction method for internal junction temperature via dynamic thermo......-sensitive electrical parameters (DTSEP) during turn-on transient is proposed. Two DTSEP, turn-on delay time (tdon) and the maximum increasing rate of collector current dic/dt(max), are combined to eliminate the bus voltage impact. Using the inherent emitter-auxiliary inductor LeE in high-power modules, the temperature......-dependent DTSEPs can be converted into a low-voltage and measurable signal. Finally, experiment results are exhibited to verify the effectiveness of proposed method....

Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films

Science.gov (United States)

Reyes, R.; Legnani, C.; Ribeiro Pinto, P. M.; Cremona, M.; de Araújo, P. J. G.; Achete, C. A.

2003-06-01

White-blue electroluminescent emission with a voltage bias less than 10 V was achieved in rf sputter-deposited amorphous carbon nitride (a-CN) and amorphous silicon carbon nitride (a-SiCN) thin-film-based devices. The heterojunction structures of these devices consist of: Indium tin oxide (ITO), used as a transparent anode; amorphous carbon film as an emission layer, and aluminum as a cathode. The thickness of the carbon films was about 250 Å. In all of the produced diodes, a stable visible emission peaked around 475 nm is observed at room temperature and the emission intensity increases with the current density. For an applied voltage of 14 V, the luminance was about 3 mCd/m2. The electroluminescent properties of the two devices are discussed and compared.

High-Voltage, Low-Power BNC Feedthrough Terminator

Science.gov (United States)

Bearden, Douglas

2012-01-01

This innovation is a high-voltage, lowpower BNC (Bayonet Neill-Concelman) feedthrough that enables the user to terminate an instrumentation cable properly while connected to a high voltage, without the use of a voltage divider. This feedthrough is low power, which will not load the source, and will properly terminate the instrumentation cable to the instrumentation, even if the cable impedance is not constant. The Space Shuttle Program had a requirement to measure voltage transients on the orbiter bus through the Ground Lightning Measurement System (GLMS). This measurement has a bandwidth requirement of 1 MHz. The GLMS voltage measurement is connected to the orbiter through a DC panel. The DC panel is connected to the bus through a nonuniform cable that is approximately 75 ft (approximately equal to 23 m) long. A 15-ft (approximately equal to 5-m), 50-ohm triaxial cable is connected between the DC panel and the digitizer. Based on calculations and simulations, cable resonances and reflections due to mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. A voltage divider at the DC panel, and terminating the 50-ohm cable properly, would eliminate this issue. Due to implementation issues, an alternative design was needed to terminate the cable properly without the use of a voltage divider. Analysis shows how the cable resonances and reflections due to the mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. After simulating a dampening circuit located at the digitizer, simulations were performed to show how the cable resonances were dampened and the accuracy was improved significantly. Test cables built to verify simulations were accurate. Since the dampening circuit is low power, it can be packaged in a BNC feedthrough.

Effect of unbalanced voltage on windings temperature, operational life and load carrying capacity of induction machine

Energy Technology Data Exchange (ETDEWEB)

Gnacinski, P. [Gdynia Maritime University, Department of Ship Electrical Power Engineering, Morska Street 83, 81-225 Gdynia (Poland)

2008-04-15

This paper investigates the influence of the CVUF angle on the windings temperature rise and the derating factor of an induction machine supplied with unbalanced voltage. The effect of simultaneous voltage unbalance and harmonics on its operational life is analyzed as well. The results of calculations and experimental investigations are presented for two induction cage machines of rated power 3 and 5.5 kW. (author)

Study of current-voltage characteristics in PbTe(Ga) alloys at low temperatures

International Nuclear Information System (INIS)

Akimov, B.A.; Albul, A.V.; Bogdanov, E.V.

1992-01-01

Results of determining current-voltage characteristics in PbTe(Ga) monocrystals of n- and p-types of conductivity in strong electric fields E ≤ 2 x 10 3 V/Cm at 4.2-77 K are presented. It was established that at helium and nitrogen temperatures, the current-voltage characteristics of PbTe(Ga) alloys, high-ohmic state of which was realized in helium, differed qualitatively from ones, typical for unalloyed PbTe. The superlinear dependence, observed in the fields, beginning from E ≥ 1 V/cm, is explained in the framework of concepts of strong electric field effect on conductivity of impurity states

Use of multi-functional flexible micro-sensors for in situ measurement of temperature, voltage and fuel flow in a proton exchange membrane fuel cell.

Science.gov (United States)

Lee, Chi-Yuan; Chan, Pin-Cheng; Lee, Chung-Ju

2010-01-01

Temperature, voltage and fuel flow distribution all contribute considerably to fuel cell performance. Conventional methods cannot accurately determine parameter changes inside a fuel cell. This investigation developed flexible and multi-functional micro sensors on a 40 μm-thick stainless steel foil substrate by using micro-electro-mechanical systems (MEMS) and embedded them in a proton exchange membrane fuel cell (PEMFC) to measure the temperature, voltage and flow. Users can monitor and control in situ the temperature, voltage and fuel flow distribution in the cell. Thereby, both fuel cell performance and lifetime can be increased.

Two-Volt Josephson Arbitrary Waveform Synthesizer Using Wilkinson Dividers

Science.gov (United States)

Flowers-Jacobs, Nathan E.; Fox, Anna E.; Dresselhaus, Paul D.; Schwall, Robert E.; Benz, Samuel P.

2016-01-01

The root-mean-square (rms) output voltage of the NIST Josephson arbitrary waveform synthesizer (JAWS) has been doubled from 1 V to a record 2 V by combining two new 1 V chips on a cryocooler. This higher voltage will improve calibrations of ac thermal voltage converters and precision voltage measurements that require state-of-the-art quantum accuracy, stability, and signal-to-noise ratio. We achieved this increase in output voltage by using four on-chip Wilkinson dividers and eight inner-outer dc blocks, which enable biasing of eight Josephson junction (JJ) arrays with high-speed inputs from only four high-speed pulse generator channels. This approach halves the number of pulse generator channels required in future JAWS systems. We also implemented on-chip superconducting interconnects between JJ arrays, which reduces systematic errors and enables a new modular chip package. Finally, we demonstrate a new technique for measuring and visualizing the operating current range that reduces the measurement time by almost two orders of magnitude and reveals the relationship between distortion in the output spectrum and output pulse sequence errors. PMID:27453676

Sign of inverse spin Hall voltages generated by ferromagnetic resonance and temperature gradients in yttrium iron garnet platinum bilayers

International Nuclear Information System (INIS)

Schreier, Michael; Lotze, Johannes; Gross, Rudolf; Goennenwein, Sebastian T B; Bauer, Gerrit E W; Uchida, Ken-ichi; Daimon, Shunsuke; Kikkawa, Takashi; Saitoh, Eiji; Vasyuchka, Vitaliy I; Lauer, Viktor; Chumak, Andrii V; Serga, Alexander A; Hillebrands, Burkard; Flipse, Joost; Van Wees, Bart J

2015-01-01

We carried out a concerted effort to determine the absolute sign of the inverse spin Hall effect voltage generated by spin currents injected into a normal metal. We focus on yttrium iron garnet (YIG)∣platinum bilayers at room temperature, generating spin currents by microwaves and temperature gradients. We find consistent results for different samples and measurement setups that agree with theory. We suggest a right-hand-rule to define a positive spin Hall angle corresponding to the voltage expected for the simple case of scattering of free electrons from repulsive Coulomb charges. (paper)

Voltage-Ratio Calibration System up to 50 kHz

Science.gov (United States)

Trigo, Leonardo; Slomovitz, Daniel; Faverio, Carlos; Kyriazis, Gregory

2018-03-01

This paper describes a voltage-ratio measuring system that can be used up to 50 kHz with high accuracy. It is based on two Keysight 3458A digital multimeters, working in DCV sampling mode. An external trigger based on a rubidium clock, drives both digital multimeters. It is applied to the calibration of a set of voltage dividers with primary voltages from 4 V to 1024 V.

Effects of high voltage electrical stimulation on the rate of pH decline, meat quality and color stability in chilled beef carcasses

OpenAIRE

Mombeni, Ehsan Gharib; Mombeini, Manoochehr Gharib; Figueiredo, Lucas Chaves; Siqueira, Luciano Soares Jacintho; Dias, Debora Testoni

2013-01-01

Objective: To determine the effects of high voltage electrical stimulation (HVES, 800 Voltage) on rapid decreases in pH values and improvements in meat quality. Methods: A total of 50 beef carcasses were applied, divided into two groups, one as a control and another for HVES. Meat quality was evaluated based on M. longissimus dorsi by examining pH and temperature levels at 1, 2, 5, 10 and 24 h, while color stability was examined seven days after slaughter. Results: HVES decreased the pH...

An Improvement on the Junction Temperature Measurement of Light-Emitting Diodes by using the Peak Shift Method Compared with the Forward Voltage Method

International Nuclear Information System (INIS)

He Su-Ming; Wang Jin-Bin; Luo Xiang-Dong; Zhang Bo; Fu Lei; Cheng Li-Wen; Lu Wei

2012-01-01

The junction temperature of red, green and blue high power light emitting diodes (LEDs) is measured by using the emission peak shift method and the forward voltage method. Both the emission peak shift and the forward voltage decrease show a linear relationship relative to junction temperature. The linear coefficients of the red, green and blue LEDs for the peak shift method and the forward voltage method range from 0.03 to 0.15 nm/°C and from 1.33 to 3.59 mV/°C, respectively. Compared with the forward voltage method, the peak shift method is almost independent of bias current and sample difference. The variation of the slopes is less than 2% for the peak shift method and larger than 30% for the forward voltage method, when the LEDs are driven by different bias currents. It is indicated that the peak shift method gives better stability than the forward voltage method under different LED working conditions

Mitigating voltage lead errors of an AC Josephson voltage standard by impedance matching

Science.gov (United States)

Zhao, Dongsheng; van den Brom, Helko E.; Houtzager, Ernest

2017-09-01

A pulse-driven AC Josephson voltage standard (ACJVS) generates calculable AC voltage signals at low temperatures, whereas measurements are performed with a device under test (DUT) at room temperature. The voltage leads cause the output voltage to show deviations that scale with the frequency squared. Error correction mechanisms investigated so far allow the ACJVS to be operational for frequencies up to 100 kHz. In this paper, calculations are presented to deal with these errors in terms of reflected waves. Impedance matching at the source side of the system, which is loaded with a high-impedance DUT, is proposed as an accurate method to mitigate these errors for frequencies up to 1 MHz. Simulations show that the influence of non-ideal component characteristics, such as the tolerance of the matching resistor, the capacitance of the load input impedance, losses in the voltage leads, non-homogeneity in the voltage leads, a non-ideal on-chip connection and inductors between the Josephson junction array and the voltage leads, can be corrected for using the proposed procedures. The results show that an expanded uncertainty of 12 parts in 106 (k  =  2) at 1 MHz and 0.5 part in 106 (k  =  2) at 100 kHz is within reach.

Comparison of Conductor-Temperature Calculations Based on Different Radial-Position-Temperature Detections for High-Voltage Power Cable

Directory of Open Access Journals (Sweden)

Lin Yang

2018-01-01

Full Text Available In this paper, the calculation of the conductor temperature is related to the temperature sensor position in high-voltage power cables and four thermal circuits—based on the temperatures of insulation shield, the center of waterproof compound, the aluminum sheath, and the jacket surface are established to calculate the conductor temperature. To examine the effectiveness of conductor temperature calculations, simulation models based on flow characteristics of the air gap between the waterproof compound and the aluminum are built up, and thermocouples are placed at the four radial positions in a 110 kV cross-linked polyethylene (XLPE insulated power cable to measure the temperatures of four positions. In measurements, six cases of current heating test under three laying environments, such as duct, water, and backfilled soil were carried out. Both errors of the conductor temperature calculation and the simulation based on the temperature of insulation shield were significantly smaller than others under all laying environments. It is the uncertainty of the thermal resistivity, together with the difference of the initial temperature of each radial position by the solar radiation, which led to the above results. The thermal capacitance of the air has little impact on errors. The thermal resistance of the air gap is the largest error source. Compromising the temperature-estimation accuracy and the insulation-damage risk, the waterproof compound is the recommended sensor position to improve the accuracy of conductor-temperature calculation. When the thermal resistances were calculated correctly, the aluminum sheath is also the recommended sensor position besides the waterproof compound.

Analog and digital dividers for mass spectrometers

International Nuclear Information System (INIS)

Osipov, A.K.

1980-01-01

Errors of four different types of stress dividers used in statical mass-spectrometers for determination of mass number by accelerating stress are analyzed. The simplest flowsheet of the analog divider comprises operation amplifier, in the chain of the negative feedback of which a multiplication device on differential cascade is switched- in. This analog divider has high sensitivity to temperature and high error approximately 5%. Application of the multiplier on differential cascade with normalization permits to increase temperature stability and decrease the error up to 1%. Another type of the analog divider is a logarithmic divider the error of which is constant within the whole operation range and it constitutes 1-5%. The digital divider with a digital-analog transformer (DAT) has the error of +-0.015% which is determined by the error of detectors and resistance of keys in the locked state. Considered is the design of a divider based on transformation of the inlet stress into the time period. The error of the divider is determined in this case mainly by stress of the zero shift of the operation amplifier (it should be compensated) and relative threshold stability of the comparator triggering which equals (2-3)x10 -4 . It is noted that the divider with DAT application and the divider with the use of stress transformation within the time period are most perspective ones for statical mass-spectrometers [ru

Temperature dependence of the radiation induced change of depletion voltage in silicon PIN detectors

International Nuclear Information System (INIS)

Ziock, H.J.; Holzscheiter, K.; Morgan, A.; Palounek, A.P.T.; Ellison, J.; Heinson, A.P.; Mason, M.; Wimpenny, S.J.; Barberis, E.; Cartiglia, N.; Grillo, A.; O'Shaughnessy, K.; Rahn, J.; Rinaldi, P.; Rowe, W.A.; Sadrozinski, H.F.W.; Seiden, A.; Spencer, E.; Webster, A.; Wichmann, R.; Wilder, M.; Coupal, D.; Pal, T.

1993-01-01

The silicon microstrip detectors that will be used in the SDC experiment at the Superconducting Super Collider (SSC) will be exposed to very large fluences of charged particles, neutrons, and gammas. The authors present a study of how temperature affects the change in the depletion voltage of silicon PIN detectors damaged by radiation. They study the initial radiation damage and the short-term and long-term annealing of that damage as a function of temperature in the range from -10 degrees C to +50 degrees C, and as a function of 800 MeV proton fluence up to 1.5 x 10 14 p/cm 2 . They express the pronounced temperature dependencies in a simple model in terms of two annealing time constants which depend exponentially on the temperature

Effect of combined platinum and electron on the temperature dependence of forward voltage in fast recovery diode

International Nuclear Information System (INIS)

Jia Yun-Peng; Zhao Bao; Wu Yu; Zhou Xuan; Li Zhe; Tan Jian; Yang Fei

2015-01-01

The temperature dependences of forward voltage drop (V F ) of the fast recovery diodes (FRDs) are remarkably influenced by different lifetime controlled treatments. In this paper the results of an experimental study are presented, which are the lifetime controls of platinum treatment, electron irradiation treatment, and the combined treatment of the above ones. Based on deep level transient spectroscopy (DLTS) measurements, a new level E6 (E C -0.376 eV) is found in the combined lifetime treated (CLT) sample, which is different from the levels of the individual platinum and electron irradiation ones. Comparing the tested V F results of CLT samples with the others, the level E6 is responsible for the degradation of temperature dependence of the forward voltage drop in the FRD. (paper)

A Novel Method for In-Situ Monitoring of Local Voltage, Temperature and Humidity Distributions in Fuel Cells Using Flexible Multi-Functional Micro Sensors

Science.gov (United States)

Lee, Chi-Yuan; Fan, Wei-Yuan; Chang, Chih-Ping

2011-01-01

In this investigation, micro voltage, temperature and humidity sensors were fabricated and integrated for the first time on a stainless steel foil using micro-electro-mechanical systems (MEMS). These flexible multi-functional micro sensors have the advantages of high temperature resistance, flexibility, smallness, high sensitivity and precision of location. They were embedded in a proton exchange membrane fuel cell (PEMFC) and used to simultaneously measure variations in the inner voltage, temperature and humidity. The accuracy and reproducibility of the calibrated results obtained using the proposed micro sensors is excellent. The experimental results indicate that, at high current density and 100%RH or 75%RH, the relative humidity midstream and downstream saturates due to severe flooding. The performance of the PEM fuel cell can be stabilized using home-made flexible multi-functional micro sensors by the in-situ monitoring of local voltage, temperature and humidity distributions within it. PMID:22319361

A novel method for in-situ monitoring of local voltage, temperature and humidity distributions in fuel cells using flexible multi-functional micro sensors.

Science.gov (United States)

Lee, Chi-Yuan; Fan, Wei-Yuan; Chang, Chih-Ping

2011-01-01

In this investigation, micro voltage, temperature and humidity sensors were fabricated and integrated for the first time on a stainless steel foil using micro-electro-mechanical systems (MEMS). These flexible multi-functional micro sensors have the advantages of high temperature resistance, flexibility, smallness, high sensitivity and precision of location. They were embedded in a proton exchange membrane fuel cell (PEMFC) and used to simultaneously measure variations in the inner voltage, temperature and humidity. The accuracy and reproducibility of the calibrated results obtained using the proposed micro sensors is excellent. The experimental results indicate that, at high current density and 100%RH or 75%RH, the relative humidity midstream and downstream saturates due to severe flooding. The performance of the PEM fuel cell can be stabilized using home-made flexible multi-functional micro sensors by the in-situ monitoring of local voltage, temperature and humidity distributions within it.

A Novel Method for In-Situ Monitoring of Local Voltage, Temperature and Humidity Distributions in Fuel Cells Using Flexible Multi-Functional Micro Sensors

Directory of Open Access Journals (Sweden)

Chih-Ping Chang

2011-01-01

Full Text Available In this investigation, micro voltage, temperature and humidity sensors were fabricated and integrated for the first time on a stainless steel foil using micro-electro-mechanical systems (MEMS. These flexible multi-functional micro sensors have the advantages of high temperature resistance, flexibility, smallness, high sensitivity and precision of location. They were embedded in a proton exchange membrane fuel cell (PEMFC and used to simultaneously measure variations in the inner voltage, temperature and humidity. The accuracy and reproducibility of the calibrated results obtained using the proposed micro sensors is excellent. The experimental results indicate that, at high current density and 100%RH or 75%RH, the relative humidity midstream and downstream saturates due to severe flooding. The performance of the PEM fuel cell can be stabilized using home-made flexible multi-functional micro sensors by the in-situ monitoring of local voltage, temperature and humidity distributions within it.

Current, voltage and temperature distribution modeling of light-emitting diodes based on electrical and thermal circuit analysis

International Nuclear Information System (INIS)

Yun, J; Shim, J-I; Shin, D-S

2013-01-01

We demonstrate a modeling method based on the three-dimensional electrical and thermal circuit analysis to extract current, voltage and temperature distributions of light-emitting diodes (LEDs). In our model, the electrical circuit analysis is performed first to extract the current and voltage distributions in the LED. Utilizing the result obtained from the electrical circuit analysis as distributed heat sources, the thermal circuit is set up by using the duality between Fourier's law and Ohm's law. From the analysis of the thermal circuit, the temperature distribution at each epitaxial film is successfully obtained. Comparisons of experimental and simulation results are made by employing an InGaN/GaN multiple-quantum-well blue LED. Validity of the electrical circuit analysis is confirmed by comparing the light distribution at the surface. Since the temperature distribution at each epitaxial film cannot be obtained experimentally, the apparent temperature distribution is compared at the surface of the LED chip. Also, experimentally obtained average junction temperature is compared with the value calculated from the modeling, yielding a very good agreement. The analysis method based on the circuit modeling has an advantage of taking distributed heat sources as inputs, which is essential for high-power devices with significant self-heating. (paper)

Structural mechanism of voltage-dependent gating in an isolated voltage-sensing domain.

Science.gov (United States)

Li, Qufei; Wanderling, Sherry; Paduch, Marcin; Medovoy, David; Singharoy, Abhishek; McGreevy, Ryan; Villalba-Galea, Carlos A; Hulse, Raymond E; Roux, Benoît; Schulten, Klaus; Kossiakoff, Anthony; Perozo, Eduardo

2014-03-01

The transduction of transmembrane electric fields into protein motion has an essential role in the generation and propagation of cellular signals. Voltage-sensing domains (VSDs) carry out these functions through reorientations of positive charges in the S4 helix. Here, we determined crystal structures of the Ciona intestinalis VSD (Ci-VSD) in putatively active and resting conformations. S4 undergoes an ~5-Å displacement along its main axis, accompanied by an ~60° rotation. This movement is stabilized by an exchange in countercharge partners in helices S1 and S3 that generates an estimated net charge transfer of ~1 eo. Gating charges move relative to a ''hydrophobic gasket' that electrically divides intra- and extracellular compartments. EPR spectroscopy confirms the limited nature of S4 movement in a membrane environment. These results provide an explicit mechanism for voltage sensing and set the basis for electromechanical coupling in voltage-dependent enzymes and ion channels.

Apparatus with a cooled X-ray source and a high voltage generator

Energy Technology Data Exchange (ETDEWEB)

1977-02-01

Apparatus, especially for a dental application, with an X-ray source and a high voltage generator, whereby the X-ray source and a high voltage generator are contained in a housing, which is filled with a coolant medium, characterised by the housing being divided into two chambers, whereby the X-ray source is in the first chamber and the high voltage generator is in the second chamber and between the chambers a dividing wall is placed for the screening of the X-ray irradiation from the first chamber from the second, whereby at least one of the walls of the second chamber is elastic to accommodate the expansion of the coolant medium.

Low-temperature VRH conduction through complex materials in the presence of a temperature-dependent voltage threshold: A semi-classical percolative approach

International Nuclear Information System (INIS)

Sen, A.K.; Bhattacharya, S.

2006-12-01

In this paper, we study the variation of low temperature (T) dc conductance, G(T), of a semi-classical percolative Random Resistor cum Tunneling-bond Network (RRTN), in the presence of a linearly temperature-dependent microscopic voltage threshold, υ g (T). This model (proposed by our group in the early 90's) considers a phenomenological semi-classical tunneling (or, hopping through a barrier) process. Just as in our previous constant-υ g case, we find in the present study also that the variable range hopping (VRH) exponent γ varies continuously with the ohmic concentration p in a non-monotonic fashion. In addition, we observe a new shoulder-like behaviour of G(T) in the intermediate temperature range, below the conductance maximum. (author)

Experimental and theoretical studies of a high temperature cesium-barium tacitron, with application to low voltage-high current inversion

International Nuclear Information System (INIS)

Murray, C.S.; El-Genk, M.S.

1994-02-01

A low voltage/high current switch refer-red as ''Cs-Ba tacitron'' is studied for use as a dc to ac inverter in high temperature and/or ionizing radiation environments. The operational characteristics of the Cs-Ba tacitron as a switch were investigated experimentally in three modes: (a) breakdown mode, (b) I-V mode, and (c) current modulation mode. Operation parameters measured include switching frequencies up to 20 kHz, hold-off voltages up to 200 V, current densities in excess of 15 A/CM 2 , switch power density of 1 kW/cm 2 , and a switching efficiency in excess of 90 % at collector voltages greater than 30 V. Also, if the discharge current is circuit limited to a value below the maximum thermal emission current density, the voltage drop is constant and below 3 V

Multiple current peaks in room-temperature atmospheric pressure homogenous dielectric barrier discharge plasma excited by high-voltage tunable nanosecond pulse in air

Energy Technology Data Exchange (ETDEWEB)

Yang, De-Zheng; Wang, Wen-Chun; Zhang, Shuai; Tang, Kai; Liu, Zhi-jie; Wang, Sen [Key Lab of Materials Modification, Dalian University of Technology, Ministry of Education, Dalian 116024 (China)

2013-05-13

Room temperature homogenous dielectric barrier discharge plasma with high instantaneous energy efficiency is acquired by using nanosecond pulse voltage with 20-200 ns tunable pulse width. Increasing the voltage pulse width can lead to the generation of regular and stable multiple current peaks in each discharge sequence. When the voltage pulse width is 200 ns, more than 5 organized current peaks can be observed under 26 kV peak voltage. Investigation also shows that the organized multiple current peaks only appear in homogenous discharge mode. When the discharge is filament mode, organized multiple current peaks are replaced by chaotic filament current peaks.

Temperature Dependences of Torque Generation and Membrane Voltage in the Bacterial Flagellar Motor

Science.gov (United States)

Inoue, Yuichi; Baker, Matthew A.B.; Fukuoka, Hajime; Takahashi, Hiroto; Berry, Richard M.; Ishijima, Akihiko

2013-01-01

In their natural habitats bacteria are frequently exposed to sudden changes in temperature that have been shown to affect their swimming. With our believed to be new methods of rapid temperature control for single-molecule microscopy, we measured here the thermal response of the Na+-driven chimeric motor expressed in Escherichia coli cells. Motor torque at low load (0.35 μm bead) increased linearly with temperature, twofold between 15°C and 40°C, and torque at high load (1.0 μm bead) was independent of temperature, as reported for the H+-driven motor. Single cell membrane voltages were measured by fluorescence imaging and these were almost constant (∼120 mV) over the same temperature range. When the motor was heated above 40°C for 1–2 min the torque at high load dropped reversibly, recovering upon cooling below 40°C. This response was repeatable over as many as 10 heating cycles. Both increases and decreases in torque showed stepwise torque changes with unitary size ∼150 pN nm, close to the torque of a single stator at room temperature (∼180 pN nm), indicating that dynamic stator dissociation occurs at high temperature, with rebinding upon cooling. Our results suggest that the temperature-dependent assembly of stators is a general feature of flagellar motors. PMID:24359752

High-voltage measurements on the 5 ppm relative uncertainty level with collinear laser spectroscopy

Science.gov (United States)

Krämer, J.; König, K.; Geppert, Ch; Imgram, P.; Maaß, B.; Meisner, J.; Otten, E. W.; Passon, S.; Ratajczyk, T.; Ullmann, J.; Nörtershäuser, W.

2018-04-01

We present the results of high-voltage collinear laser spectroscopy measurements on the 5 ppm relative uncertainty level using a pump and probe scheme at the 4s ^2S1/2 → 4p ^2P3/2 transition of {\\hspace{0pt}}40Ca+ involving the 3d ^2D5/2 metastable state. With two-stage laser interaction and a reference measurement we can eliminate systematic effects such as differences in the contact potentials due to different electrode materials and thermoelectric voltages, and the unknown starting potential of the ions in the ion source. Voltage measurements were performed between  -5 kV and  -19 kV and parallel measurements with stable high-voltage dividers calibrated to 5 ppm relative uncertainty were used as a reference. Our measurements are compatible with the uncertainty limits of the high-voltage dividers and demonstrate an unprecedented (factor of 20) increase in the precision of direct laser-based high-voltage measurements.

Voltage stress effects on microcircuit accelerated life test failure rates

Science.gov (United States)

Johnson, G. M.

1976-01-01

The applicability of Arrhenius and Eyring reaction rate models for describing microcircuit aging characteristics as a function of junction temperature and applied voltage was evaluated. The results of a matrix of accelerated life tests with a single metal oxide semiconductor microcircuit operated at six different combinations of temperature and voltage were used to evaluate the models. A total of 450 devices from two different lots were tested at ambient temperatures between 200 C and 250 C and applied voltages between 5 Vdc and 15 Vdc. A statistical analysis of the surface related failure data resulted in bimodal failure distributions comprising two lognormal distributions; a 'freak' distribution observed early in time, and a 'main' distribution observed later in time. The Arrhenius model was shown to provide a good description of device aging as a function of temperature at a fixed voltage. The Eyring model also appeared to provide a reasonable description of main distribution device aging as a function of temperature and voltage. Circuit diagrams are shown.

Time scales of bias voltage effects in FE/MgO-based magnetic tunnel junctions with voltage-dependent perpendicular anisotropy

International Nuclear Information System (INIS)

Lytvynenko, Ia.M.; Hauet, T.; Montaigne, F.; Bibyk, V.V.; Andrieu, S.

2015-01-01

Interplay between voltage-induced magnetic anisotropy transition and voltage-induced atomic diffusion is studied in epitaxial V/Fe (0.7 nm)/ MgO/ Fe(5 nm)/Co/Au magnetic tunnel junction where thin Fe soft electrode has in-plane or out-of-plane anisotropy depending on the sign of the bias voltage. We investigate the origin of the slow resistance variation occurring when switching bias voltage in opposite polarity. We demonstrate that the time to reach resistance stability after voltage switching is reduced when increasing the voltage amplitude or the temperature. A single energy barrier of about 0.2 eV height is deduced from temperature dependence. Finally, we demonstrate that the resistance change is not correlated to a change in soft electrode anisotropy. This conclusion contrasts with observations recently reported on analogous systems. - Highlights: • Voltage-induced time dependence of resistance is studied in epitaxial Fe/MgO/Fe. • Resistance change is not related to the bottom Fe/MgO interface. • The effect is thermally activated with an energy barrier of the order of 0.2 eV height

Application of transducers to the control of temperatures and of alternating and direct voltages (1962)

International Nuclear Information System (INIS)

Raoult, N.

1960-11-01

The temperature regulator and the voltage regulators described have been studied with a view to conferring a high degree of safety to the apparatuses in which they are used. They make use almost exclusively of Transducers which are passive elements acting mainly in these apparatuses as amplifiers and which are entirely satisfactory, ensuring that the regulators studied keep their essential qualities i.e accuracy, reliability, stability and sensitivity. (author) [fr

Number-to-voltage converter on commutated condensers

International Nuclear Information System (INIS)

Grekhov, Yu.N.

1975-01-01

A code-voltage converter using precision voltage dividers based on commutated capacitors [1] is described which is distinguished by the absence of precision elements. Each digit includes eight field-effect transistors in two 1KT682 microcircuit assemblies and three microcapacitors with a conventional unstable capacitance 6200 pF +- 50%. The converter has a speed of response that is not inferior to that of converters based on R-2R matrices, while in time stability of the characteristics, low interference level, and low output impedance it is superior to such converters

Reversible calcium alloying enables a practical room-temperature rechargeable calcium-ion battery with a high discharge voltage

Science.gov (United States)

Wang, Meng; Jiang, Chunlei; Zhang, Songquan; Song, Xiaohe; Tang, Yongbing; Cheng, Hui-Ming

2018-06-01

Calcium-ion batteries (CIBs) are attractive candidates for energy storage because Ca2+ has low polarization and a reduction potential (-2.87 V versus standard hydrogen electrode, SHE) close to that of Li+ (-3.04 V versus SHE), promising a wide voltage window for a full battery. However, their development is limited by difficulties such as the lack of proper cathode/anode materials for reversible Ca2+ intercalation/de-intercalation, low working voltages (performance. Here, we report a CIB that can work stably at room temperature in a new cell configuration using graphite as the cathode and tin foils as the anode as well as the current collector. This CIB operates on a highly reversible electrochemical reaction that combines hexafluorophosphate intercalation/de-intercalation at the cathode and a Ca-involved alloying/de-alloying reaction at the anode. An optimized CIB exhibits a working voltage of up to 4.45 V with capacity retention of 95% after 350 cycles.

High-voltage electrode optimization towards uniform surface treatment by a pulsed volume discharge

International Nuclear Information System (INIS)

Ponomarev, A V; Pedos, M S; Scherbinin, S V; Mamontov, Y I; Ponomarev, S V

2015-01-01

In this study, the shape and material of the high-voltage electrode of an atmospheric pressure plasma generation system were optimised. The research was performed with the goal of achieving maximum uniformity of plasma treatment of the surface of the low-voltage electrode with a diameter of 100 mm. In order to generate low-temperature plasma with the volume of roughly 1 cubic decimetre, a pulsed volume discharge was used initiated with a corona discharge. The uniformity of the plasma in the region of the low-voltage electrode was assessed using a system for measuring the distribution of discharge current density. The system's low-voltage electrode - collector - was a disc of 100 mm in diameter, the conducting surface of which was divided into 64 radially located segments of equal surface area. The current at each segment was registered by a high-speed measuring system controlled by an ARM™-based 32-bit microcontroller. To facilitate the interpretation of results obtained, a computer program was developed to visualise the results. The program provides a 3D image of the current density distribution on the surface of the low-voltage electrode. Based on the results obtained an optimum shape for a high-voltage electrode was determined. Uniformity of the distribution of discharge current density in relation to distance between electrodes was studied. It was proven that the level of non-uniformity of current density distribution depends on the size of the gap between electrodes. Experiments indicated that it is advantageous to use graphite felt VGN-6 (Russian abbreviation) as the material of the high-voltage electrode's emitting surface. (paper)

Comment on 'Temperature dependence of the current-voltage characteristics of Sn/PANI/p-Si/Al heterojunctions'

Energy Technology Data Exchange (ETDEWEB)

Pipinys, P; Rimeika, A [Department of Physics, Vilnius Pedagogical University, Studentu 39, LT-08106 Vilnius (Lithuania)], E-mail: ftfdekanas@vpu.lt

2008-02-27

Current-voltage characteristics of Sn/PANI/p-Si/Al heterojunctions, measured in the temperature range 140-280 K by Kaya et al (2007 J. Phys.: Condens. Matter 19 406205), are reinterpreted in the framework of phonon-assisted tunnelling theory, as a free-charge-carrier generation mechanism in the strong electrical field. It is shown that phonon-assisted tunnelling more adequately describes the peculiarities of the variation of I-V data with temperature in PANI polymers. (comment)

High-field quench behavior and dependence of hot spot temperature on quench detection voltage threshold in a Bi2Sr2CaCu2Ox coil

International Nuclear Information System (INIS)

Shen, Tengming; Ye, Liyang; Turrioni, Daniele; Li, Pei

2015-01-01

Small insert solenoids have been built using a multifilamentary Ag/Bi 2 Sr 2 CaCu 2 O x round wire insulated with a mullite sleeve (∼100 μm in thickness) and characterized in background fields to explore the quench behaviors and limits of Bi 2 Sr 2 CaCu 2 O x superconducting magnets, with an emphasis on assessing the impact of slow normal zone propagation on quench detection. Using heaters of various lengths to initiate a small normal zone, a coil was quenched safely more than 70 times without degradation, with the maximum coil temperature reaching 280 K. Coils withstood a resistive voltage of tens of mV for seconds without quenching, showing the high stability of these coils and suggesting that the quench detection voltage should be greater than 50 mV in order not to falsely trigger protection. The hot spot temperature for the resistive voltage of the normal zone to reach 100 mV increased from ∼40–∼80 K while increasing the operating wire current density J o from 89 A mm −2 to 354 A mm −2 , whereas for the voltage to reach 1 V, it increased from ∼60–∼140 K. This shows the increasing negative impact of slow normal zone propagation on quench detection with increasing J o and the need to limit the quench detection voltage to <1 V. These measurements, coupled with an analytical quench model, were used to assess the impact of the maximum allowable detection voltage and temperature upon quench detection on the quench protection, assuming a limit of the hot spot temperature to <300 K. (paper)

Numerical Study on Open-Circuit Voltage of Single Layer Organic Solar Cells with Schottky Contacts: Effects of Molecular Energy Levels, Temperature and Thickness

International Nuclear Information System (INIS)

Rong-Hua, Li; Ying-Quan, Peng; Chao-Zhu, Ma; Run-Sheng, Wang; Hong-Wei, Xie; Ying, Wang; Wei-Min, Meng

2010-01-01

We numerically investigate the effects of the exciton generation rate G, temperature T, the active layer thickness d and the position of LUMO level E L related to the cathode work function W c at a given energy gap on the open-circuit voltage V oc of single layer organic solar cells with Schottky contact. It is demonstrated that open-circuit voltage increases concomitantly with the decreasing cathode work function W c for given anode work functions and exciton generation rates. In the case of given cathode and anode work functions, the open-circuit voltage first increases with the exciton generation rate and then reaches a saturation value, which equals to the built-in voltage. Additionally, it is worth noting that a significant improvement to V oc could be made by selecting an organic material which has a relative high LUMO level (low |E L | value). However, V oc decreases as the temperature increases, and the decreasing rate reduces with the enhancement of exciton generation rate. Our study also shows that it is of no benefit to improve the open-circuit voltage by increasing the device thickness because of an enhanced charge recombination in thicker devices. (cross-disciplinary physics and related areas of science and technology)

Determining the mode of high voltage breakdowns in vacuum devices

International Nuclear Information System (INIS)

Miller, H.C.; Furno, E.J.; Sturtz, J.P.

1980-01-01

Devices were constructed which were essentially vacuum diodes equipped with windows allowing observation of high voltage breakdowns. The waveform of the applied voltage was photographed, and the x-ray output was monitored to investigate electrical breakdown in these vacuum diodes. Results indicate that breakdowns may be divided into two types: (1) vacuum (interelectrode) breakdown - characterized by a diffuse moderately bright discharge, a relative slow and smooth voltage collapse, and a large burst of x-rays, and (2) surface (insulator) flashover - characterized by a bright discharge with a very bright filamentary core, a relatively fast and noisy voltage collapse and no x-ray burst. Useful information concerning the type of breakdown in a vacuum device can be obtained by monitoring the voltage (current) waveform and the x-ray output

Room temperature resistive state switching with hysteresis in GdMnO3 thin film with low threshold voltage

International Nuclear Information System (INIS)

Nath, Rajib; Raychaudhuri, A. K.; Mukovskii, Ya. M.; Andreev, N.; Chichkov, Vladimir

2014-01-01

In this paper, we report a room temperature resistive state switching with hysteresis, in a thin film of GdMnO 3 grown on NdGaO 3 substrate. The switched states have a resistance ratio ≈10 3 . The switching is unipolar in nature, with a low set voltage <3 V, while the reset voltage <0.3 V. The switching occurs between a high resistance polaronic insulating state and a low resistance metallic state. The resistance state transition has been ascribed to an electronic mechanism that originates from co-existing phases (created by charge disproportionation) that can undergo a percolative transition enabled by the applied bias

Precision monitoring and calibration of the high-voltage for the KATRIN experiment; Praezisionsueberwachung und Kalibration der Hochspannung fuer das KATRIN-Experiment

Energy Technology Data Exchange (ETDEWEB)

Thuemmler, T.

2007-11-12

The goal of the KATRIN(KArlsruhe TRIritium Neutrino) Experiment is to directly determine the neutrino rest mass from the kinematics of the tritium-{beta}-decay. KATRIN uses the high resolution and luminosity of a spectrometer following the MAC-E filter principle. Based on the experience of the successful predecessor experiments in Mainz and Troisk and the improved experimental technology, KATRIN aims to reach a sensitivity on the neutrino mass of 0.2 eV/c{sup 2} (90% C.L.). One of the few systematic uncertainties that have to be reduced to meet this goal is the uncertainty of measuring and monitoring the potential of the electrostatic filter of the spectrometer. In tritium measurement mode voltages of about U{sub 0} =-18.6 kV have to be permanently monitored with a maximum uncertainty of 3.3 ppm ({approx} 61mV at U{sub 0}), in order not to add more than {delta}m{sup 2}{sub {nu}{sub ec}}{sup 4} {<=} 0.0075 eV{sup 2} to the total systematic uncertainty. The goal of this work is to build a new precision high voltage divider in cooperation with PTB Braunschweig that reaches an uncertainty of about 1 ppm at voltages up to 35 kV. The divider is based on a new type of precision resistors, which have been screened with respect to their warm up drift and their temperature coefficient at the ppm level. By combining 100 of the best matching samples, the mutual warm up effect could be reduced to a computed value of <0.02 ppm. The precision resistors are mounted in a shielded and temperature stabilized vessel under N{sub 2} gas. The properties of both installed low voltage outputs with the ratios 1972:1 and 3944:1 have been repeatedly calibrated with about one year time difference at the DC high voltage laboratory (division 2.31) of PTB. The performance of the new divider in real measurements has been tested with the prototype of the new condensed {sup 83m}Kr calibration source (CKrS) [Ost08] at the Mainz spectrometer. Detailed stability investigations of the energy of the {sup

Unequal Input Voltages Distribution Between the Serial Connected Halfbridges

Directory of Open Access Journals (Sweden)

Radovan Ovcarcik

2006-01-01

Full Text Available This paper describes a topology of DC-DC converter consisting in two serial connected half-bridges. Secondary circuit is realized like a conventional full-wave rectifier. The main advantage of this topology is the possibility of dividing the input voltage between the half-bridges. The converter is controlled using the phase-shift modulation, which allows a ZVSoperation mode. The voltage unbalance between the inputs causes an important problem of the presented topology. It is necessary to avoid it by the control algorithm, which is described in the text. The practical results show a zero voltage switching technique and the limits of the chosen topology and of the control.

A thermoelectric voltage effect in polyethylene oxide

International Nuclear Information System (INIS)

Martin, Bjoern; Wagner, Achim; Kliem, Herbert

2003-01-01

The conductivity of polyethylene oxide (PEO) is described with a three-dimensional hopping model considering electrostatic interactions between the ions. Ions fluctuate over energy-barriers in a multi-well potential. To decide whether positive or negative charges are responsible for this conductivity, the thermoelectric voltage is measured. The samples are embedded between two aluminium-electrodes. The oxide on the interface between the electrodes and the PEO serves as a blocking layer. The temperature of each electrode is controlled by a Peltier element. A temperature step is applied to one electrode by changing the temperature of one of the Peltier elements. Due to this temperature gradient, the mobile charges fluctuate thermally activated from the warmer side to the colder side of the sample. The direction of the measured thermoelectric voltage indicates the type of mobile charges. It is found that positive charges are mobile. Further, it is shown that the absolute value of the thermoelectric voltage depends on the energy-barrier heights in the multi-well potential

A thermoelectric voltage effect in polyethylene oxide

CERN Document Server

Martin, B; Kliem, H

2003-01-01

The conductivity of polyethylene oxide (PEO) is described with a three-dimensional hopping model considering electrostatic interactions between the ions. Ions fluctuate over energy-barriers in a multi-well potential. To decide whether positive or negative charges are responsible for this conductivity, the thermoelectric voltage is measured. The samples are embedded between two aluminium-electrodes. The oxide on the interface between the electrodes and the PEO serves as a blocking layer. The temperature of each electrode is controlled by a Peltier element. A temperature step is applied to one electrode by changing the temperature of one of the Peltier elements. Due to this temperature gradient, the mobile charges fluctuate thermally activated from the warmer side to the colder side of the sample. The direction of the measured thermoelectric voltage indicates the type of mobile charges. It is found that positive charges are mobile. Further, it is shown that the absolute value of the thermoelectric voltage depen...

A Flexible Three-in-One Microsensor for Real-Time Monitoring of Internal Temperature, Voltage and Current of Lithium Batteries.

Science.gov (United States)

Lee, Chi-Yuan; Peng, Huan-Chih; Lee, Shuo-Jen; Hung, I-Ming; Hsieh, Chien-Te; Chiou, Chuan-Sheng; Chang, Yu-Ming; Huang, Yen-Pu

2015-05-19

Lithium batteries are widely used in notebook computers, mobile phones, 3C electronic products, and electric vehicles. However, under a high charge/discharge rate, the internal temperature of lithium battery may rise sharply, thus causing safety problems. On the other hand, when the lithium battery is overcharged, the voltage and current may be affected, resulting in battery instability. This study applies the micro-electro-mechanical systems (MEMS) technology on a flexible substrate, and develops a flexible three-in-one microsensor that can withstand the internal harsh environment of a lithium battery and instantly measure the internal temperature, voltage and current of the battery. Then, the internal information can be fed back to the outside in advance for the purpose of safety management without damaging the lithium battery structure. The proposed flexible three-in-one microsensor should prove helpful for the improvement of lithium battery design or material development in the future.

Determination of the cathode fall voltage in fluorescent lamps by measurement of the operating voltage

International Nuclear Information System (INIS)

Hilscher, A.

2002-01-01

A new method for the determination of the cathode fall voltage of fluorescent lamps is shown. The cathode fall voltage can be determined by measurement of the lamp operating voltage at constant lamp wall temperature, constant discharge current and variation of the electrode heating current. Commercial lamps, which do not need to be specially prepared, can be used for the measurement. The results show good correlation to other measurements of the cathode fall voltage at various discharge currents by means of capacitive coupling. The measured values of the cathode fall voltage are used for determining the minimum, target and maximum setting of the sum of the squares of the pin currents of one electrode (the so-called SOS value) as a function of the discharge current in fluorescent lamp dimming. (author)

Characteristics and Breakdown Behaviors of Polysilicon Resistors for High Voltage Applications

Directory of Open Access Journals (Sweden)

Xiao-Yu Tang

2015-01-01

Full Text Available With the rapid development of the power integrated circuit technology, polysilicon resistors have been widely used not only in traditional CMOS circuits, but also in the high voltage applications. However, there have been few detailed reports about the polysilicon resistors’ characteristics, like voltage and temperature coefficients and breakdown behaviors which are critical parameters of high voltage applications. In this study, we experimentally find that the resistance of the polysilicon resistor with a relatively low doping concentration shows negative voltage and temperature coefficients, while that of the polysilicon resistor with a high doping concentration has positive voltage and temperature coefficients. Moreover, from the experimental results of breakdown voltages of the polysilicon resistors, it could be deduced that the breakdown of polysilicon resistors is thermally rather than electrically induced. We also proposed to add an N-type well underneath the oxide to increase the breakdown voltage in the vertical direction when the substrate is P-type doped.

Voltage Quench Dynamics of a Kondo System.

Science.gov (United States)

Antipov, Andrey E; Dong, Qiaoyuan; Gull, Emanuel

2016-01-22

We examine the dynamics of a correlated quantum dot in the mixed valence regime. We perform numerically exact calculations of the current after a quantum quench from equilibrium by rapidly applying a bias voltage in a wide range of initial temperatures. The current exhibits short equilibration times and saturates upon the decrease of temperature at all times, indicating Kondo behavior both in the transient regime and in the steady state. The time-dependent current saturation temperature connects the equilibrium Kondo temperature to a substantially increased value at voltages outside of the linear response. These signatures are directly observable by experiments in the time domain.

Biophysical characterization of the fluorescent protein voltage probe VSFP2.3 based on the voltage-sensing domain of Ci-VSP.

Science.gov (United States)

Lundby, Alicia; Akemann, Walther; Knöpfel, Thomas

2010-11-01

A voltage sensitive phosphatase was discovered in the ascidian Ciona intestinalis. The phosphatase, Ci-VSP, contains a voltage-sensing domain homologous to those known from voltage-gated ion channels, but unlike ion channels, the voltage-sensing domain of Ci-VSP can reside in the cell membrane as a monomer. We fused the voltage-sensing domain of Ci-VSP to a pair of fluorescent reporter proteins to generate a genetically encodable voltage-sensing fluorescent probe, VSFP2.3. VSFP2.3 is a fluorescent voltage probe that reports changes in membrane potential as a FRET (fluorescence resonance energy transfer) signal. Here we report sensing current measurements from VSFP2.3, and show that VSFP2.3 carries 1.2 e sensing charges, which are displaced within 1.5 ms. The sensing currents become faster at higher temperatures, and the voltage dependence of the decay time constants is temperature dependent. Neutralization of an arginine in S4, previously suggested to be a sensing charge, and measuring associated sensing currents indicate that this charge is likely to reside at the membrane-aqueous interface rather than within the membrane electric field. The data presented give us insights into the voltage-sensing mechanism of Ci-VSP, which will allow us to further improve the sensitivity and kinetics of the family of VSFP proteins.

A Flexible Three-in-One Microsensor for Real-Time Monitoring of Internal Temperature, Voltage and Current of Lithium Batteries

Directory of Open Access Journals (Sweden)

Chi-Yuan Lee

2015-05-01

Full Text Available Lithium batteries are widely used in notebook computers, mobile phones, 3C electronic products, and electric vehicles. However, under a high charge/discharge rate, the internal temperature of lithium battery may rise sharply, thus causing safety problems. On the other hand, when the lithium battery is overcharged, the voltage and current may be affected, resulting in battery instability. This study applies the micro-electro-mechanical systems (MEMS technology on a flexible substrate, and develops a flexible three-in-one microsensor that can withstand the internal harsh environment of a lithium battery and instantly measure the internal temperature, voltage and current of the battery. Then, the internal information can be fed back to the outside in advance for the purpose of safety management without damaging the lithium battery structure. The proposed flexible three-in-one microsensor should prove helpful for the improvement of lithium battery design or material development in the future.

Disulfide mapping the voltage-sensing mechanism of a voltage-dependent potassium channel.

Science.gov (United States)

Nozaki, Tomohiro; Ozawa, Shin-Ichiro; Harada, Hitomi; Kimura, Tomomi; Osawa, Masanori; Shimada, Ichio

2016-11-17

Voltage-dependent potassium (Kv) channels allow for the selective permeability of potassium ions in a membrane potential dependent manner, playing crucial roles in neurotransmission and muscle contraction. Kv channel is a tetramer, in which each subunit possesses a voltage-sensing domain (VSD) and a pore domain (PD). Although several lines of evidence indicated that membrane depolarization is sensed as the movement of helix S4 of the VSD, the detailed voltage-sensing mechanism remained elusive, due to the difficulty of structural analyses at resting potential. In this study, we conducted a comprehensive disulfide locking analysis of the VSD using 36 double Cys mutants, in order to identify the proximal residue pairs of the VSD in the presence or absence of a membrane potential. An intramolecular SS-bond was formed between 6 Cys pairs under both polarized and depolarized environment, and one pair only under depolarized environment. The multiple conformations captured by the SS-bond can be divided by two states, up and down, where S4 lies on the extracellular and intracellular sides of the membrane, respectively, with axial rotation of 180°. The transition between these two states is caused by the S4 translocation of 12 Å, enabling allosteric regulation of the gating at the PD.

Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes

Energy Technology Data Exchange (ETDEWEB)

Chawanda, Albert, E-mail: albert.chawanda@up.ac.za [Midlands State University, Bag 9055 Gweru (Zimbabwe); University of Pretoria, 0002 Pretoria (South Africa); Mtangi, Wilbert; Auret, Francois D; Nel, Jacqueline [University of Pretoria, 0002 Pretoria (South Africa); Nyamhere, Cloud [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Diale, Mmantsae [University of Pretoria, 0002 Pretoria (South Africa)

2012-05-15

The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current-voltage (I-V) measurements in the temperature range 140-300 K. The I-V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero-bias Schottky barrier height (SBH) ({Phi}{sub B}) increases with the increasing temperature. The I-V characteristics are analyzed using the thermionic emission (TE) model and the assumption of a Gaussian distribution of the barrier heights due to barrier inhomogeneities at the metal-semiconductor interface. The zero-bias barrier height {Phi}{sub B} vs. 1/2 kT plot has been used to show the evidence of a Gaussian distribution of barrier heights and values of {Phi}{sub B}=0.615 eV and standard deviation {sigma}{sub s0}=0.0858 eV for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. The Richardson constant and the mean barrier height from the modified Richardson plot were obtained as 1.37 A cm{sup -2} K{sup -2} and 0.639 eV, respectively. This Richardson constant is much smaller than the reported of 50 A cm{sup -2} K{sup -2}. This may be due to greater inhomogeneities at the interface.

Piezo Voltage Controlled Planar Hall Effect Devices.

Science.gov (United States)

Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

2016-06-22

The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

Voltage-carrying states in superconducting microstrips

International Nuclear Information System (INIS)

Stuivinga, M.E.C.

1983-01-01

When the critical current is exceeded in a superconducting microstrip, voltage-carrying states with a resistance significantly below the normal state resistance can occur. Phase-slip centers (PSC) appear at about the critical temperature. These are successive local voltage units which manifest themselves as strip-like increments in voltage in the I-V characteristic. For temperatures off the critical temperature the PSC regime degenerates into a region of normal material, a so-called hot spot. These two phenomena, PSC and hot spots, form the subject of this thesis. To gain a better understanding of the phase-slip center process, an experiment was designed to measure local values of the quasi-particle and pair potential. The results of local potential and gap measurements at a PSC in aluminium are presented and discussed. Special attention is paid to pair-breaking interactions which can shorten the relaxation time. A non-linear differential equation is derived which describes the development of a PSC into a normal hot spot under the influence of Joule heating. It incorporates the temperature rise due to the dissipative processes occurring in the charge imbalance tails. Numerical solutions are presented for a set of parameters, including those for aluminium and tin. Subsequently, they are compared with experiments. (Auth.)

Measurement Error Estimation for Capacitive Voltage Transformer by Insulation Parameters

Directory of Open Access Journals (Sweden)

Bin Chen

2017-03-01

Full Text Available Measurement errors of a capacitive voltage transformer (CVT are relevant to its equivalent parameters for which its capacitive divider contributes the most. In daily operation, dielectric aging, moisture, dielectric breakdown, etc., it will exert mixing effects on a capacitive divider’s insulation characteristics, leading to fluctuation in equivalent parameters which result in the measurement error. This paper proposes an equivalent circuit model to represent a CVT which incorporates insulation characteristics of a capacitive divider. After software simulation and laboratory experiments, the relationship between measurement errors and insulation parameters is obtained. It indicates that variation of insulation parameters in a CVT will cause a reasonable measurement error. From field tests and calculation, equivalent capacitance mainly affects magnitude error, while dielectric loss mainly affects phase error. As capacitance changes 0.2%, magnitude error can reach −0.2%. As dielectric loss factor changes 0.2%, phase error can reach 5′. An increase of equivalent capacitance and dielectric loss factor in the high-voltage capacitor will cause a positive real power measurement error. An increase of equivalent capacitance and dielectric loss factor in the low-voltage capacitor will cause a negative real power measurement error.

Radiation Hardened Structured ASIC Platform with Compensation of Delay for Temperature and Voltage Variations for Multiple Redundant Temporal Voting Latch Technology

Science.gov (United States)

Ardalan, Sasan (Inventor)

2018-01-01

The invention relates to devices and methods of maintaining the current starved delay at a constant value across variations in voltage and temperature to increase the speed of operation of the sequential logic in the radiation hardened ASIC design.

Possible influence of the voltage dependence of the Josephson tunneling current I(V,psi) on the corresponding current-voltage characteristic

International Nuclear Information System (INIS)

Hahlbohm, H.D.; Luebbig, H.; Luther, H.

1975-01-01

Analog computer calculations of the current-voltage characteristic involving the voltage dependence of the amplitudes of the tunneling current equation explicitly, for the case of a current driven tunneling junction at different temperatures are reported on. These studies are based upon the adiabatic representation of the current-phase relation. The influence of retarding effects is not included. Therefore the computational results can lead to practical consequences at best in the range near the transition temperature. (Auth.)

Temperature- and supply voltage-independent time references for wireless sensor networks

CERN Document Server

De Smedt, Valentijn; Dehaene, Wim

2015-01-01

This book investigates the possible circuit solutions to overcome the temperature- and supply voltage-sensitivity of fully-integrated time references for ultra-low-power communication in wireless sensor networks. The authors provide an elaborate theoretical introduction and literature study to enable full understanding of the design challenges and shortcomings of current oscillator implementations.  Furthermore, a closer look to the short-term as well as the long-term frequency stability of integrated oscillators is taken. Next, a design strategy is developed and applied to 5 different oscillator topologies and 1 sensor interface.All 6 implementations are subject to an elaborate study of frequency stability, phase noise, and power consumption. In the final chapter all blocks are compared to the state of the art. The main goals of this book are: • to provide a comprehensive overview of timing issues and solutions in wireless sensor networks; • to gain understanding of all underlying mechanisms by starti...

Fabrication of n-ZnO/ p-Si (100) and n-ZnO:Al/ p-Si (100) Heterostructures and Study of Current-Voltage, Capacitance-Voltage and Room-Temperature Photoluminescence

Science.gov (United States)

Shah, M. A. H.; Khan, M. K. R.; Tanveer Karim, A. M. M.; Rahman, M. M.; Kamruzzaman, M.

2018-01-01

Heterojunction diodes of n-ZnO/ p-Si (100) and n-ZnO:Al/ p-Si (100) were fabricated by spray pyrolysis technique. X-ray diffraction (XRD), energy dispersive x-ray spectroscopy (EDX), and field emission scanning electron microscopy (FESEM) were used to characterize the as-prepared samples. The XRD pattern indicates the hexagonal wurzite structure of zinc oxide (ZnO) and Al-doped ZnO (AZO) thin films grown on Si (100) substrate. The compositional analysis by EDX indicates the presence of Al in the AZO structure. The FESEM image indicates the smooth and compact surface of the heterostructures. The current-voltage characteristics of the heterojunction confirm the rectifying diode behavior at different temperatures and illumination intensities. For low forward bias voltage, the ideality factors were determined to be 1.24 and 1.38 for un-doped and Al-doped heterostructures at room temperature (RT), respectively, which indicates the good diode characteristics. The capacitance-voltage response of the heterojunctions was studied for different oscillation frequencies. From the 1/ C 2- V plot, the junction built-in potentials were found 0.30 V and 0.40 V for un-doped and Al-doped junctions at RT, respectively. The differences in built-in potential for different heterojunctions indicate the different interface state densities of the junctions. From the RT photoluminescence (PL) spectrum of the n-ZnO/ p-Si (100) heterostructure, an intense main peak at near band edge (NBE) 378 nm (3.28 eV) and weak deep-level emissions (DLE) centered at 436 nm (2.84 eV) and 412 nm (3.00 eV) were observed. The NBE emission is attributed to the radiative recombination of the free and bound excitons and the DLE results from the radiative recombination through deep level defects.

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

Science.gov (United States)

Teverovsky, Alexander A.

2016-01-01

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

Thermoelectric voltage at a nanometer-scale heated tip point contact

Science.gov (United States)

Fletcher, Patrick C.; Lee, Byeonghee; King, William P.

2012-01-01

We report thermoelectric voltage measurements between the platinum-coated tip of a heated atomic force microscope (AFM) cantilever and a gold-coated substrate. The cantilevers have an integrated heater-thermometer element made from doped single crystal silicon, and a platinum tip. The voltage can be measured at the tip, independent from the cantilever heating. We used the thermocouple junction between the platinum tip and the gold substrate to measure thermoelectric voltage during heating. Experiments used either sample-side or tip-side heating, over the temperature range 25-275 °C. The tip-substrate contact is ˜4 nm in diameter and its average measured Seebeck coefficient is 3.4 μV K-1. The thermoelectric voltage is used to determine tip-substrate interface temperature when the substrate is either glass or quartz. When the non-dimensional cantilever heater temperature is 1, the tip-substrate interface temperature is 0.593 on glass and 0.125 on quartz. Thermal contact resistance between the tip and the substrate heavily influences the tip-substrate interface temperature. Measurements agree well with modeling when the tip-substrate interface contact resistance is 108 K W-1.

Thermoelectric voltage at a nanometer-scale heated tip point contact

International Nuclear Information System (INIS)

Fletcher, Patrick C; Lee, Byeonghee; King, William P

2012-01-01

We report thermoelectric voltage measurements between the platinum-coated tip of a heated atomic force microscope (AFM) cantilever and a gold-coated substrate. The cantilevers have an integrated heater–thermometer element made from doped single crystal silicon, and a platinum tip. The voltage can be measured at the tip, independent from the cantilever heating. We used the thermocouple junction between the platinum tip and the gold substrate to measure thermoelectric voltage during heating. Experiments used either sample-side or tip-side heating, over the temperature range 25–275 °C. The tip–substrate contact is ∼4 nm in diameter and its average measured Seebeck coefficient is 3.4 μV K −1 . The thermoelectric voltage is used to determine tip–substrate interface temperature when the substrate is either glass or quartz. When the non-dimensional cantilever heater temperature is 1, the tip–substrate interface temperature is 0.593 on glass and 0.125 on quartz. Thermal contact resistance between the tip and the substrate heavily influences the tip–substrate interface temperature. Measurements agree well with modeling when the tip–substrate interface contact resistance is 10 8 K W −1 . (paper)

Module Five: Relationships of Current, Voltage, and Resistance; Basic Electricity and Electronics Individualized Learning System.

Science.gov (United States)

Bureau of Naval Personnel, Washington, DC.

This module covers the relationships between current and voltage; resistance in a series circuit; how to determine the values of current, voltage, resistance, and power in resistive series circuits; the effects of source internal resistance; and an introduction to the troubleshooting of series circuits. This module is divided into five lessons:…

Design and realization of high voltage disconnector condition monitoring system

Science.gov (United States)

Shi, Jinrui; Xu, Tianyang; Yang, Shuixian; Li, Buoyang

2017-08-01

The operation status of the high voltage disconnector directly affects the safe and stable operation of the power system. This article uses the wireless frequency hopping communication technology of the communication module to achieve the temperature acquisition of the switch contacts and high voltage bus, to introduce the current value of the loop in ECS, and judge the operation status of the disconnector by considering the ambient temperature, calculating the temperature rise; And through the acquisition of the current of drive motor in the process of switch closing and opening, and fault diagnosis of the disconnector by analyzing the change rule of the drive motor current, the condition monitoring of the high voltage disconnector is realized.

Reversible voltage dependent transition of abnormal and normal bipolar resistive switching.

Science.gov (United States)

Wang, Guangyu; Li, Chen; Chen, Yan; Xia, Yidong; Wu, Di; Xu, Qingyu

2016-11-14

Clear understanding the mechanism of resistive switching is the important prerequisite for the realization of high performance nonvolatile resistive random access memory. In this paper, binary metal oxide MoO x layer sandwiched by ITO and Pt electrodes was taken as a model system, reversible transition of abnormal and normal bipolar resistive switching (BRS) in dependence on the maximum voltage was observed. At room temperature, below a critical maximum voltage of 2.6 V, butterfly shaped I-V curves of abnormal BRS has been observed with low resistance state (LRS) to high resistance state (HRS) transition in both polarities and always LRS at zero field. Above 2.6 V, normal BRS was observed, and HRS to LRS transition happened with increasing negative voltage applied. Temperature dependent I-V measurements showed that the critical maximum voltage increased with decreasing temperature, suggesting the thermal activated motion of oxygen vacancies. Abnormal BRS has been explained by the partial compensation of electric field from the induced dipoles opposite to the applied voltage, which has been demonstrated by the clear amplitude-voltage and phase-voltage hysteresis loops observed by piezoelectric force microscopy. The normal BRS was due to the barrier modification at Pt/MoO x interface by the accumulation and depletion of oxygen vacancies.

Temperature stabilization of injection lasers

International Nuclear Information System (INIS)

Albanese, A.

1987-01-01

Apparatus which stabilizes the temperature, and thereby the output wavelength, of an injection laser. Means monitor the laser terminal voltage across a laser and derive a voltage therefrom which is proportional to the junction voltage of the laser. Means compares the voltage to a reference value from source and a temperature controller adjusts the laser temperature in response to the results of the comparison. Further embodiments of the present invention vary the output wavelength of the laser by varying the reference value from source against which the laser junction voltage is compared. (author)

Observation of asymmetric transverse voltage in granular high-T c superconductors

International Nuclear Information System (INIS)

Luz, M.S. da; Carvalho, F.J.H. de; Santos, C.A.M. dos; Shigue, C.Y.; Machado, A.J.S.; Ricardo da Silva, R.

2005-01-01

This work reports the influence of the granularity on the transverse voltage as a function of the temperature, V XY (T), in polycrystalline samples of Bi 2 Sr 2 Ca 0.8 Pr 0.2 Cu 2 O 8+δ composition. It is observed nonzero transverse voltage at zero external magnetic field in the vicinity of the superconducting transition while far away from it, both above and below, no such voltage was detected. Measurements of V XY (T) in both directions of magnetic field allowed to calculate the symmetric and asymmetric transverse voltages in the full range of the applied magnetic field studied (zero up to 9 T). The symmetric transverse voltage as a function of the temperature presents sign reversal of the Hall resistance and positive Hall voltage at normal state such as expected for hole-doped high critical temperature superconductors. On the other hand, the asymmetric component of V XY (T) shows a peak near the superconducting transition which has been recently reported in literature. V XY (T) curves measured in a sample with double superconducting transition, which was confirmed by ac-susceptibility measurements and hysteresis loops of the magneto-resistance, present two peaks in the asymmetric component. These peaks are related to the intergranular and intragranular transitions and can be explained within the framework of Josephson and Abrikosov vortices and anti-vortices motion. By comparing the temperature dependence of the asymmetric transverse voltage and the derivative of longitudinal voltage is possible to observe a specific relation between both transport properties, which is noted to be valid not only at zero applied magnetic field but also under applied field

High voltage investigations for ITER coils

International Nuclear Information System (INIS)

Fink, S.; Fietz, W.H.

2006-01-01

The superconducting ITER magnets will be excited with high voltage during operation and fast discharge. Because the coils are complex systems the internal voltage distribution can differ to a large extent from the ideal linear voltage distribution. In case of fast excitations internal voltages between conductor and radial plate of a TF coil can be even higher than the terminal voltage of 3.5 kV to ground which appears during a fast discharge without a fault. Hence the determination of the transient voltage distribution is important for a proper insulation co-ordination and will provide a necessary basis for the verification of the individual insulation design and the choice of test voltages and waveforms. Especially the extent of internal overvoltages in case of failures, e. g. malfunction of discharge units and / or arcing is of special interest. Transient calculations for the ITER TF coil system have been performed for fast discharge and fault scenarios to define test voltages for ITER TF. The conductor and radial plate insulation of the ITER TF Model Coil were exposed at room temperature to test voltages derived from the results from these calculations. Breakdown appeared during the highest AC voltage step. A fault scenario for the TF fast discharge system is presented where one fault triggers a second fault, leading to considerable voltage stress. In addition a FEM model of Poloidal Field Coil 3 for the determination of the parameters of a detailed network model is presented in order to prepare detailed investigations of the transient voltage behaviour of the PF coils. (author)

Electrochemical performance of lithium-ion capacitors evaluated under high temperature and high voltage stress using redox stable electrolytes and additives

Science.gov (United States)

Boltersdorf, Jonathan; Delp, Samuel A.; Yan, Jin; Cao, Ben; Zheng, Jim P.; Jow, T. Richard; Read, Jeffrey A.

2018-01-01

Lithium-ion capacitors (LICs) were investigated for high power, moderate energy density applications for operation in extreme environments with prolonged cycle-life performance. The LICs were assembled as three-layered pouch cells in an asymmetric configuration employing Faradaic pre-lithiated hard carbon anodes and non-Faradaic ion adsorption-desorption activated carbon (AC) cathodes. The capacity retention was measured under high stress conditions, while the design factor explored was electrolyte formulation using a set of carbonates and electrolyte additives, with a focus on their stability. The LIC cells were evaluated using critical performance tests under the following high stress conditions: long-term voltage floating-cycling stability at room temperature (2.2-3.8 V), high temperature storage at 3.8 V, and charge voltages up to 4.4 V. The rate performance of different electrolytes and additives was measured after the initial LIC cell formation for a 1C-10C rate. The presence of vinylene carbonate (VC) and tris (trimethylsilyl) phosphate (TMSP) were found to be essential to the improved electrochemical performance of the LIC cells under all testing conditions.

Capacitance-voltage characterization of Al/Al2O3/PVA-PbSe MIS diode

Science.gov (United States)

Gawri, Isha; Sharma, Mamta; Jindal, Silky; Singh, Harpreet; Tripathi, S. K.

2018-05-01

The present paper reports the capacitance-voltage characterization of Al/Al2O3/PVA-PbSe MIS diode using chemical bath deposition method. Here anodic alumina layer prepared using electrolytic deposition method on Al substrate is used as insulating material. Using the capacitance-voltage variation at a fixed frequency, the different parameters such as Depletion layer width, Barrier height, Built-in voltage and Carrier concentration has been calculated at room temperature as well as at temperature range from 123 K to 323 K. With the increase in temperature the barrier height and depletion layer width follow a decreasing trend. Therefore, the capacitance-voltage characterization at different temperatures characterization provides strong evidence that the properties of MIS diode are primarily affected by diode parameters.

The research of high voltage switchgear detecting unit

Science.gov (United States)

Ji, Tong; Xie, Wei; Wang, Xiaoqing; Zhang, Jinbo

2017-07-01

In order to understand the status of the high voltage switch in the whole life circle, you must monitor the mechanical and electrical parameters that affect device health. So this paper gives a new high voltage switchgear detecting unit based on ARM technology. It can measure closing-opening mechanical wave, storage motor current wave and contactor temperature to judge the device’s health status. When something goes wrong, it can be on alert and give some advice. The practice showed that it can meet the requirements of circuit breaker mechanical properties temperature online detection.

High voltage generator circuit with low power and high efficiency applied in EEPROM

International Nuclear Information System (INIS)

Liu Yan; Zhang Shilin; Zhao Yiqiang

2012-01-01

This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory (EEPROM). The low power is minimized by a capacitance divider circuit and a regulator circuit using the controlling clock switch technique. The high efficiency is dependent on the zero threshold voltage (V th ) MOSFET and the charge transfer switch (CTS) charge pump. The proposed high voltage generator circuit has been implemented in a 0.35 μm EEPROM CMOS process. Measured results show that the proposed high voltage generator circuit has a low power consumption of about 150.48 μW and a higher pumping efficiency (83.3%) than previously reported circuits. This high voltage generator circuit can also be widely used in low-power flash devices due to its high efficiency and low power dissipation. (semiconductor integrated circuits)

Timing divided attention.

Science.gov (United States)

Hogendoorn, Hinze; Carlson, Thomas A; VanRullen, Rufin; Verstraten, Frans A J

2010-11-01

Visual attention can be divided over multiple objects or locations. However, there is no single theoretical framework within which the effects of dividing attention can be interpreted. In order to develop such a model, here we manipulated the stage of visual processing at which attention was divided, while simultaneously probing the costs of dividing attention on two dimensions. We show that dividing attention incurs dissociable time and precision costs, which depend on whether attention is divided during monitoring or during access. Dividing attention during monitoring resulted in progressively delayed access to attended locations as additional locations were monitored, as well as a one-off precision cost. When dividing attention during access, time costs were systematically lower at one of the accessed locations than at the other, indicating that divided attention during access, in fact, involves rapid sequential allocation of undivided attention. We propose a model in which divided attention is understood as the simultaneous parallel preparation and subsequent sequential execution of multiple shifts of undivided attention. This interpretation has the potential to bring together diverse findings from both the divided-attention and saccade preparation literature and provides a framework within which to integrate the broad spectrum of divided-attention methodologies.

CMOS voltage references an analytical and practical perspective

CERN Document Server

Kok, Chi-Wah

2013-01-01

A practical overview of CMOS circuit design, this book covers the technology, analysis, and design techniques of voltage reference circuits.  The design requirements covered follow modern CMOS processes, with an emphasis on low power, low voltage, and low temperature coefficient voltage reference design. Dedicating a chapter to each stage of the design process, the authors have organized the content to give readers the tools they need to implement the technologies themselves. Readers will gain an understanding of device characteristics, the practical considerations behind circuit topology,

Heat-pump performance: voltage dip/sag, under-voltage and over-voltage

Directory of Open Access Journals (Sweden)

William J.B. Heffernan

2014-12-01

Full Text Available Reverse cycle air-source heat-pumps are an increasingly significant load in New Zealand and in many other countries. This has raised concern over the impact wide-spread use of heat-pumps may have on the grid. The characteristics of the loads connected to the power system are changing because of heat-pumps. Their performance during under-voltage events such as voltage dips has the potential to compound the event and possibly cause voltage collapse. In this study, results from testing six heat-pumps are presented to assess their performance at various voltages and hence their impact on voltage stability.

Maximum permissible voltage of YBCO coated conductors

Energy Technology Data Exchange (ETDEWEB)

Wen, J.; Lin, B.; Sheng, J.; Xu, J.; Jin, Z. [Department of Electrical Engineering, Shanghai Jiao Tong University, Shanghai (China); Hong, Z., E-mail: zhiyong.hong@sjtu.edu.cn [Department of Electrical Engineering, Shanghai Jiao Tong University, Shanghai (China); Wang, D.; Zhou, H.; Shen, X.; Shen, C. [Qingpu Power Supply Company, State Grid Shanghai Municipal Electric Power Company, Shanghai (China)

2014-06-15

Highlights: • We examine three kinds of tapes’ maximum permissible voltage. • We examine the relationship between quenching duration and maximum permissible voltage. • Continuous I{sub c} degradations under repetitive quenching where tapes reaching maximum permissible voltage. • The relationship between maximum permissible voltage and resistance, temperature. - Abstract: Superconducting fault current limiter (SFCL) could reduce short circuit currents in electrical power system. One of the most important thing in developing SFCL is to find out the maximum permissible voltage of each limiting element. The maximum permissible voltage is defined as the maximum voltage per unit length at which the YBCO coated conductors (CC) do not suffer from critical current (I{sub c}) degradation or burnout. In this research, the time of quenching process is changed and voltage is raised until the I{sub c} degradation or burnout happens. YBCO coated conductors test in the experiment are from American superconductor (AMSC) and Shanghai Jiao Tong University (SJTU). Along with the quenching duration increasing, the maximum permissible voltage of CC decreases. When quenching duration is 100 ms, the maximum permissible of SJTU CC, 12 mm AMSC CC and 4 mm AMSC CC are 0.72 V/cm, 0.52 V/cm and 1.2 V/cm respectively. Based on the results of samples, the whole length of CCs used in the design of a SFCL can be determined.

Energy harvesting in high voltage measuring techniques

International Nuclear Information System (INIS)

Żyłka, Pawel; Doliński, Marcin

2016-01-01

The paper discusses selected problems related to application of energy harvesting (that is, generating electricity from surplus energy present in the environment) to supply autonomous ultra-low-power measurement systems applicable in high voltage engineering. As a practical example of such implementation a laboratory model of a remote temperature sensor is presented, which is self-powered by heat generated in a current-carrying busbar in HV- switchgear. Presented system exploits a thermoelectric harvester based on a passively cooled Peltier module supplying micro-power low-voltage dc-dc converter driving energy-efficient temperature sensor, microcontroller and a fibre-optic transmitter. Performance of the model in laboratory simulated conditions are presented and discussed. (paper)

Low energy proton irradiation effects on InP/InGaAs DHBTs and InP-base frequency dividers

Science.gov (United States)

Zhang, Xingyao; Li, Yudong; Guo, Qi; Feng, Jie

2018-03-01

InP/InGaAs DHBTs and frequency dividers are irradiated by low energy proton, and displacement damage effect of the devices are analyzed. InP/InGaAs DHBTs has been made DC characteristics measurements, and the function measurement for frequency dividers has been done both before and after proton irradiation. The breakdown voltage of InP DHBTs drop to 3.7V When the fluence up to 5x1013 protons/cm2. Meanwhile, the function of frequency dividers get out of order. Degradation of DC characteristics of DHBTs are due to the radiation-induced defects in the quasi neutral base and the space charge region of base-collector and base-emitter junctions. The performance deterioration of DHBTs induce the fault of frequency dividers, and prescaler may be the most sensitive circuit.

Mitigation of Unbalanced Voltage Sags and Voltage Unbalance in CIGRE Low Voltage Distribution Network

DEFF Research Database (Denmark)

Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar

2013-01-01

Any problem with voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM) etc. can be used to mitigate the voltage problems in the distribution system...... to unbalanced faults. The compensation of unbalanced voltage sags and voltage unbalance in the CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0........ The voltage problems dealt with in this paper are to show how to mitigate unbalanced voltage sags and voltage unbalance in the CIGRE Low Voltage (LV) test network and net-works like this. The voltage unbalances, for the tested cases in the CIGRE LV test network are mainly due to single phase loads and due...

Measurement and statistical analysis of single-molecule current-voltage characteristics, transition voltage spectroscopy, and tunneling barrier height.

Science.gov (United States)

Guo, Shaoyin; Hihath, Joshua; Díez-Pérez, Ismael; Tao, Nongjian

2011-11-30

We report on the measurement and statistical study of thousands of current-voltage characteristics and transition voltage spectra (TVS) of single-molecule junctions with different contact geometries that are rapidly acquired using a new break junction method at room temperature. This capability allows one to obtain current-voltage, conductance voltage, and transition voltage histograms, thus adding a new dimension to the previous conductance histogram analysis at a fixed low-bias voltage for single molecules. This method confirms the low-bias conductance values of alkanedithiols and biphenyldithiol reported in literature. However, at high biases the current shows large nonlinearity and asymmetry, and TVS allows for the determination of a critically important parameter, the tunneling barrier height or energy level alignment between the molecule and the electrodes of single-molecule junctions. The energy level alignment is found to depend on the molecule and also on the contact geometry, revealing the role of contact geometry in both the contact resistance and energy level alignment of a molecular junction. Detailed statistical analysis further reveals that, despite the dependence of the energy level alignment on contact geometry, the variation in single-molecule conductance is primarily due to contact resistance rather than variations in the energy level alignment.

Low-voltage circuit breaker arcs—simulation and measurements

International Nuclear Information System (INIS)

Yang, Fei; Wu, Yi; Rong, Mingzhe; Sun, Hao; Ren, Zhigang; Niu, Chunping; Murphy, Anthony B

2013-01-01

As one of the most important electrical components, the low-voltage circuit breaker (LVCB) has been widely used for protection in all types of low-voltage distribution systems. In particular, the low-voltage dc circuit breaker has been arousing great research interest in recent years. In this type of circuit breaker, an air arc is formed in the interrupting process which is a 3D transient arc in a complex chamber geometry with splitter plates. Controlling the arc evolution and the extinction are the most significant problems. This paper reviews published research works referring to LVCB arcs. Based on the working principle, the arcing process is divided into arc commutation, arc motion and arc splitting; we focus our attention on the modelling and measurement of these phases. In addition, previous approaches in papers of the critical physical phenomenon treatment are discussed, such as radiation, metal erosion, wall ablation and turbulence in the air arc. Recommendations for air arc modelling and measurement are presented for further investigation. (topical review)

The Researching on Evaluation of Automatic Voltage Control Based on Improved Zoning Methodology

Science.gov (United States)

Xiao-jun, ZHU; Ang, FU; Guang-de, DONG; Rui-miao, WANG; De-fen, ZHU

2018-03-01

According to the present serious phenomenon of increasing size and structure of power system, hierarchically structured automatic voltage control(AVC) has been the researching spot. In the paper, the reduced control model is built and the adaptive reduced control model is researched to improve the voltage control effect. The theories of HCSD, HCVS, SKC and FCM are introduced and the effect on coordinated voltage regulation caused by different zoning methodologies is also researched. The generic framework for evaluating performance of coordinated voltage regulation is built. Finally, the IEEE-96 stsyem is used to divide the network. The 2383-bus Polish system is built to verify that the selection of a zoning methodology affects not only the coordinated voltage regulation operation, but also its robustness to erroneous data and proposes a comprehensive generic framework for evaluating its performance. The New England 39-bus network is used to verify the adaptive reduced control models’ performance.

On the theory of non-self-maintained low voltage arc discharge

International Nuclear Information System (INIS)

Shcherbinin, P.P.; Cherednichenko, Yu.G.

1980-01-01

In the approximation of constant temperature of plasma electrons for two emitter temperatures 1440 and 1830 K calculated are the volt-ampere characteristics and components of the voltage internal drop in a thermionic converter in the cases of self-maintained discharge in cesium and with an external source of atom ionization and electron heating. It is obtained, that using an external ionization source the decrease of voltage drop in the interelectrode gap with account of ionization energy constitutes about 0.1 V. Electron heating is not effective. For further reduction of voltage losses it is necessary to search for ways for decreasing electron Coulomb scattering on ions

Atomic mean-square displacements and the critical-voltage effect in cubic solid solutions

International Nuclear Information System (INIS)

Shirley, C.G.; Fisher, R.M.

1979-01-01

The critical-voltage phenomena observed in high-voltage electron microscope images of bend contours as well as in corresponding Kikuchi or convergent-beam diffraction patterns provide sensitive methods of determining submicroscopic alloy parameters such as Debye temperatures, short-range order, and atomic scattering factors. Only a very limited number of critical voltages can be observed in metal crystals in the voltage range usually available, 100 to 1200 kV, so that quantitative interpretation of the data must be based on a few-parameter model which incorporates all the pertinent factors. A satisfactory two-parameter model has been developed which can be used to interpret or compute the critical voltages of substitutional solid solutions as functions of composition, temperature and short-range order. In the alloy systems Fe-Cr, Ni-Au, Cu-Au and Cu-Al, sufficient critical voltage data are available to derive the model parameters which pertain to atomic bonding in the lattice. In addition to atomic scattering amplitudes, the critical voltage depends strongly on the atomic mean-square displacements. The static contribution to the mean-square displacements is large in alloys with large atomic-radius disparity, and is especially sensitive to short-range order in f.c.c. solid solutions. Well-defined best estimates for the model parameters are used to predict the critical voltage and its sensitivity to composition, temperature and short-range order for a large number of solid solutions. Systems for which critical-voltage studies may be of considerable interest are indicated. (author)

Effect of argon ion beam voltages on the microstructure of aluminum nitride films prepared at room temperature by a dual ion beam sputtering system

International Nuclear Information System (INIS)

Chen, H.-Y.; Han Sheng; Cheng, C.-H.; Shih, H.C.

2004-01-01

Aluminum nitride (AlN) films were successfully deposited at room temperature onto p-type (1 0 0) silicon wafers by manipulating argon ion beam voltages in a dual ion beam sputtering (DIBS). X-ray diffraction spectra showed that aluminum nitride films could be synthesized above 800 V. The (0 0 2) orientation was dominant at 800 V, above which the orientation was random. The atomic force microscope (AFM) images displayed a relatively smooth surface with the root-mean-square roughness of 2-3 nm, where this roughness decreased with argon ion beam voltage. The Al 2p 3/2 and N 1s spectra indicated that both the aluminum-aluminum bond and aluminum-nitrogen bond appeared at 600 V, above which only the aluminum-nitrogen bond was detected. Moreover, the atomic concentration in aluminum nitride films was concentrated in aluminum-rich phases in all cases. Nevertheless, the aluminum concentration markedly increased with argon ion beam voltages below 1000 V, above which the concentration decreased slightly. The correlation between the microstructure of aluminum nitride films and argon ion beam voltages is also discussed

High voltage diagnostics on electrical insulation of supersonducting magnets

International Nuclear Information System (INIS)

Irmisch, M.

1995-12-01

The high voltage (HV) performance of superconducting magnets of large dimensions, e.g. as needed in fusion reactors, is a challange in the field of high voltage technology, i.e. especially in the field of cryogenic high voltage components and with respect to questions of HV insulation diagnostics at low temperature. By using the development of POLO - a superconducting prototype coil of a tokamak poloidal field coil - as an example, this work deals with special problems of how to get use of conventional HV test techniques for diagnostics under special cryogenic boundary conditions. As a first approach to gain experience in the field of phase resolved partial discharge (PRPD) measurements during operation of a superconductive coil, the POLO coil was subject to several high voltage tests. Compared with DC insulation resistance measurements and capacitive impulse voltage discharges to the coil, the AC PD measurements have been the only way to observe special characteristics of the electrical insulation with respect to the cooling down of the coil from 300 K to 4.2 K. The PRPD measurement technique thereby has proofed as a suitable diagnostic tool. This work can serve as basic data to be comparable within further projects of electrical insulation diagnostics at cryogenic temperatures. (orig.)

Analysis of temperature-dependant current–voltage characteristics and extraction of series resistance in Pd/ZnO Schottky barrier diodes

Energy Technology Data Exchange (ETDEWEB)

Mayimele, M A, E-mail: meehleketo@gmail.com; Rensburg, J P van. Janse; Auret, F D; Diale, M

2016-01-01

We report on the analysis of current voltage (I–V) measurements performed on Pd/ZnO Schottky barrier diodes (SBDs) in the 80–320 K temperature range. Assuming thermionic emission (TE) theory, the forward bias I–V characteristics were analysed to extract Pd/ZnO Schottky diode parameters. Comparing Cheung’s method in the extraction of the series resistance with Ohm’s law, it was observed that at lower temperatures (T<180 K) the series resistance decreased with increasing temperature, the absolute minimum was reached near 180 K and increases linearly with temperature at high temperatures (T>200 K). The barrier height and the ideality factor decreased and increased, respectively, with decrease in temperature, attributed to the existence of barrier height inhomogeneity. Such inhomogeneity was explained based on TE with the assumption of Gaussian distribution of barrier heights with a mean barrier height of 0.99 eV and a standard deviation of 0.02 eV. A mean barrier height of 0.11 eV and Richardson constant value of 37 A cm{sup −2} K{sup −2} were determined from the modified Richardson plot that considers the Gaussian distribution of barrier heights.

High voltage holding in the negative ion sources with cesium deposition

Energy Technology Data Exchange (ETDEWEB)

Belchenko, Yu.; Abdrashitov, G.; Ivanov, A.; Sanin, A.; Sotnikov, O., E-mail: O.Z.Sotnikov@inp.nsk.su [Budker Institute of Nuclear Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk (Russian Federation)

2016-02-15

High voltage holding of the large surface-plasma negative ion source with cesium deposition was studied. It was found that heating of ion-optical system electrodes to temperature >100 °C facilitates the source conditioning by high voltage pulses in vacuum and by beam shots. The procedure of electrode conditioning and the data on high-voltage holding in the negative ion source with small cesium seed are described. The mechanism of high voltage holding improvement by depletion of cesium coverage is discussed.

High frequency breakdown voltage

International Nuclear Information System (INIS)

Chu, Thanh Duy.

1992-03-01

This report contains information about the effect of frequency on the breakdown voltage of an air gap at standard pressure and temperature, 76 mm Hg and O degrees C, respectively. The frequencies of interest are 47 MHz and 60 MHz. Additionally, the breakdown in vacuum is briefly considered. The breakdown mechanism is explained on the basis of collision and ionization. The presence of the positive ions produced by ionization enhances the field in the gap, and thus determines the breakdown. When a low-frequency voltage is applied across the gap, the breakdown mechanism is the same as that caused by the DC or static voltage. However, when the frequency exceeds the first critical value f c , the positive ions are trapped in the gap, increasing the field considerably. This makes the breakdown occur earlier; in other words, the breakdown voltage is lowered. As the frequency increases two decades or more, the second critical frequency, f ce , is reached. This time the electrons start being trapped in the gap. Those electrons that travel multiple times across the gap before reaching the positive electrode result in an enormous number of electrons and positive ions being present in the gap. The result is a further decrease of the breakdown voltage. However, increasing the frequency does not decrease the breakdown voltage correspondingly. In fact, the associated breakdown field intensity is almost constant (about 29 kV/cm).The reason is that the recombination rate increases and counterbalances the production rate, thus reducing the effect of the positive ions' concentration in the gap. The theory of collision and ionization does not apply to the breakdown in vacuum. It seems that the breakdown in vacuum is primarily determined by the irregularities on the surfaces of the electrodes. Therefore, the effect of frequency on the breakdown, if any, is of secondary importance

Current–voltage characteristics of high-voltage 4H-SiC p{sup +}–n{sub 0}–n{sup +} diodes in the avalanche breakdown mode

Energy Technology Data Exchange (ETDEWEB)

Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Samsonova, T. P.; Grekhov, I. V. [Ioffe Physical–Technical Institute (Russian Federation)

2017-03-15

p{sup +}–n{sub 0}–n{sup +} 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm{sup 2}. It is shown that the avalanche-breakdown voltage increases with increasing temperature. The following diode parameters are determined: the avalanche resistance (8.6 × 10{sup –2} Ω cm{sup 2}), the electron drift velocity in the n{sub 0} base at electric fields higher than 10{sup 6} V/cm (7.8 × 10{sup 6} cm/s), and the relative temperature coefficient of the breakdown voltage (2.1 × 10{sup –4} K{sup –1}).

Improved process for heating finely divided carbonaceous materials

Energy Technology Data Exchange (ETDEWEB)

1956-08-01

A process for heating finely divided carbonaceous particles by burning a proportion of the carbon consists of passing the carbonaceous material at a temperature above 800/sup 0/F into an upwardly disposed, slender, combustion zone, suspending the particles in an upwardly-moving gas containing free oxygen so that the suspension has a density from 0.1 to 5.0 lb/cu. ft., passing the suspension upwardly through the combustion zone at a velocity of from 5 to 100 ft./sec., and injecting at least one stream of a second gas containing free oxygen at a point in the combustion zone such that at least 50% of the oxygen in the first gas has been consumed by the time the suspension reaches this point. The total quantity of oxygen is chosen so that the finely divided carbonaceous material is heated to a temperature of not less than 1,050/sup 0/F.

A Voltage Doubler Circuit to Extend the Soft-switching Range of Dual Active Bridge Converters

DEFF Research Database (Denmark)

Qin, Zian; Shen, Yanfeng; Wang, Huai

2017-01-01

A voltage doubler circuit is realized to extend the soft-switching range of Dual Active Bridge (DAB) converters. No extra hardware is added to the DAB to form this circuit, since it is composed of the dc blocking capacitor and the low side full bridge converter, which already exist in DAB....... With the voltage doubler, the DAB converter can achieve soft switching and high efficiency when the low side dc voltage is close to 2 pu (1 pu is the high side dc voltage divided by the transformer turn ratio), which can be realized only when the low side dc voltage is close to 1 pu by using the conventional phase...... shift modulation in DAB. Thus the soft switching range is extended. The soft switching boundary conditions are derived. A map to show the soft switching or hard switching in the full load and voltage range is obtained. The feasibility and effectiveness of the proposed method is finally verified...

State of charge estimation of lithium-ion batteries using the open-circuit voltage at various ambient temperatures

International Nuclear Information System (INIS)

Xing, Yinjiao; He, Wei; Pecht, Michael; Tsui, Kwok Leung

2014-01-01

Highlights: • An offline OCV–SOC–temperature table was established to infer battery SOC. • A temperature-based model was developed to estimate SOC at different temperatures. • The algorithm for SOC estimation was verified by dynamic current load. • The robustness of the approach was validated by different initial SOC values. - Abstract: Ambient temperature is a significant factor that influences the accuracy of battery SOC estimation, which is critical for remaining driving range prediction of electric vehicles (EVs) and optimal charge/discharge control of batteries. A widely used method to estimate SOC is based on an online inference of open-circuit voltage (OCV). However, the fact that the OCV–SOC is dependent on ambient temperature can result in errors in battery SOC estimation. To address this problem, this paper presents an SOC estimation approach based on a temperature-based model incorporated with an OCV–SOC–temperature table. The unscented Kalman filtering (UKF) was applied to tune the model parameters at each sampling step to cope with various uncertainties arising from the operation environment, cell-to-cell variation, and modeling inaccuracy. Two dynamic tests, the dynamic stress test (DST) and the federal urban driving schedule (FUDS), were used to test batteries at different temperatures. Then, DST was used to identify the model parameters while FUDS was used to validate the performance of the SOC estimation. The estimation was made covering the major working range from 25% to 85% SOC. The results indicated that our method can provide accurate SOC estimation with smaller root mean squared errors than the method that does not take into account ambient temperature. Thus, our approach is effective and accurate when battery operates at different ambient temperatures. Since the developed method takes into account the temperature factor as well as the complexity of the model, it could be effectively applied in battery management systems for

Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3 interface on different crystal orientations

Science.gov (United States)

Zeng, Ke; Singisetti, Uttam

2017-09-01

The interface trap density (Dit) of the SiO2/β-Ga2O3 interface in ( 2 ¯ 01), (010), and (001) orientations is obtained by the Hi-Lo method with the low frequency capacitance measured using the Quasi-Static Capacitance-Voltage (QSCV) technique. QSCV measurements are carried out at higher temperatures to increase the measured energy range of Dit in the bandgap. At room temperature, higher Dit is observed near the band edge for all three orientations. The measurement at higher temperatures led to an annealing effect that reduced the Dit value for all samples. Comparison with the conductance method and frequency dispersion of the capacitance suggests that the traps at the band edge are slow traps which respond to low frequency signals.

Radiation effects on residual voltage of polyethylene films

International Nuclear Information System (INIS)

Kyokane, Jun; Park, Dae-Hee; Yoshino, Katsumi.

1986-01-01

It has recently been pointed out that diagnosis of deterioration in insulating materials for electric cables used in nuclear power plants and outer space (communications satellite in particular) can be effectively performed based on measurements of residual voltage. In the present study, polyethylene films are irradiated with γ-rays or electron beam to examine the changes in residual voltage characteristics. Irradiation of electron beam and γ-rays are carried out to a dose of 0 - 90 Mrad and 0 - 100 Mrad, respectively. Measurements are made of the dependence of residual voltage on applied voltage, electron beam and γ-ray irradiation, annealing temperature and annealing time. Results show that carriers, which are once trapped after being released from the electrode, move within the material after the opening of the circuit to produce resiual voltage. The residual voltage increases with increasing dose of electron beam or γ-ray and levels off at high dose. Residual voltage is increased about several times by either electron beam or γ-rays, but electron beam tends to cause greater residual voltage than γ-ray. Polyethylene films irradiated with electron beam can recover upon annealing. It is concluded from observations made that residual voltage has close relations with defects in molecular structures caused by radiations, particularly the breaking of backbone chains and alteration in superstructures. (Nogami, K.)

Voltage effect in PTCR ceramics: Calculation by the method of tilted energy band

International Nuclear Information System (INIS)

Fang Chao; Zhou Dongxiang; Gong Shuping

2010-01-01

A numerical model for the calculation of the electrical characteristics of donor-doped BaTiO 3 semiconducting ceramics is suggested. This paper established a differential equation about electron level on the base of Poisson equation, and solved the equation with Runge-Kutta method. Under extra electric field, electrical characteristics have been calculated by the method of tilted energy band. We have quantitatively computed the positive temperature coefficient of resistivity (PTCR) behavior of donor-doped BaTiO 3 semiconducting ceramics and its voltage effect, and further obtained non-linear current-voltage characteristics with different grain sizes at different temperature. The results pointed out that the resistance jumping is reduced with increasing electric field applied; current and voltage relation follows Ohm's law below Curie temperature, and exhibits strong non-linear above Curie temperature; the non-linear coefficient shows a maximum value at temperature the resistivity reaches maximum and with grain size closed to depletion region width. The results are compared with experimental data.

Effect of temperature on current voltage characteristics in ZnO/CdS/CuGaSe2 single crystal solar cells

International Nuclear Information System (INIS)

Saad, M.; Kassis, A.

2005-03-01

Current voltage characteristics of Zn O/CdS/CuGaSe 2 single crystal solar cells, which have gone through repetitive annealing treatment and have been measured at different values of temperature and illumination intensity, were analyzed using the two-diode equation. The analysis revealed that current transport in these cells is governed by two competing transport mechanisms relating strongly to interface states and that both mechanisms are thermally and light activated. These two mechanisms are interface recombination and tunneling enhanced interface recombination. The activation energy values of the saturation current density in both mechanisms were calculated from the temperature dependence of the parameters describing each of them. It was found that these values depend on temperature and illumination intensity. Furthermore, the behavior of the photovoltaic parameters could be explained relying on the results of the analysis. (Authors)

Evaluation of the practical peak voltage quantity for clinical equipment in diagnostic radiology

International Nuclear Information System (INIS)

Pires, Joao dos Santos Justo

2007-01-01

The objective of this work is to evaluate the calculation of the Practical Peak Voltage (PPV) from the voltage waveform and the kerma contrast for two kinds of X-ray equipment: a single phase clinical equipment, a three phase clinical equipment. The PPV from a mammography system voltage waveform will also be established. The development of this work involves intermediate objectives that indicate the quality of the used methods to calculate the PPV. One of these intermediate objectives is the comparison between the invasive calculations of PPV (using a voltage divider) with the response of kVp meter that calculate the PPV. Another intermediate objective is to compare the PPV with the Contrast Equivalent Voltage (the original non-invasive PPV definition). The variation of the PPV with quantities that influence in the voltage waveform like ripple and sample rate will also be contemplated in this work. The results showed that the PPV quantity could be invasive determined trustworthy. Therefore, the ripple quantity is the mainly influence to determinate the PPV that affecting the non-invasive determination. This fact suggest that the non-invasive instruments manufacturers must reevaluate the calculation of the PPV quantity in their instruments. (author)

Coordinated Voltage Control of Distributed PV Inverters for Voltage Regulation in Low Voltage Distribution Networks

DEFF Research Database (Denmark)

Nainar, Karthikeyan; Pokhrel, Basanta Raj; Pillai, Jayakrishnan Radhakrishna

2017-01-01

This paper reviews and analyzes the existing voltage control methods of distributed solar PV inverters to improve the voltage regulation and thereby the hosting capacity of a low-voltage distribution network. A novel coordinated voltage control method is proposed based on voltage sensitivity...... optimization. The proposed method is used to calculate the voltage bands and droop settings of PV inverters at each node by the supervisory controller. The local controller of each PV inverter implements the volt/var control and if necessary, the active power curtailment as per the received settings and based...... on measured local voltages. The advantage of the proposed method is that the calculated reactive power and active power droop settings enable fair contribution of the PV inverters at each node to the voltage regulation. Simulation studies are conducted using DigSilent Power factory software on a simplified...

A novel ZVS high voltage power supply for micro-channel plate photomultiplier tubes

International Nuclear Information System (INIS)

Pei, Chengquan; Tian, Jinshou; Liu, Zhen; Qin, Hong; Wu, Shengli

2017-01-01

A novel resonant high voltage power supply (HVPS) with zero voltage switching (ZVS), to reduce the voltage stress on switching devices and improve conversion efficiency, is proposed. The proposed HVPS includes a drive circuit, a transformer, several voltage multiplying circuits, and a regulator circuit. The HVPS contains several secondary windings that can be precisely regulated. The proposed HVPS performed better than the traditional resistor voltage divider, which requires replacing matching resistors resulting in resistor dispersibility in the Micro-Channel Plate (MCP). The equivalent circuit of the proposed HVPS was established and the operational principle analyzed. The entire switching element can achieve ZVS, which was validated by a simulation and experiments. The properties of this HVPS were tested including minimum power loss (240 mW), maximum power loss (1 W) and conversion efficiency (85%). The results of this research are that the proposed HVPS was suitable for driving the micro-channel plate photomultiplier tube (MCP-PMT). It was therefore adopted to test the MCP-PMT, which will be used in Daya Bay reactor neutrino experiment II in China.

A novel ZVS high voltage power supply for micro-channel plate photomultiplier tubes

Energy Technology Data Exchange (ETDEWEB)

Pei, Chengquan [Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi’an 710049 (China); Tian, Jinshou [Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi' an 710119 (China); Liu, Zhen [Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi’an 710049 (China); Qin, Hong [School of Computer Science and Technology, Xi' an University of Science and Technology, Xi' an 710054 (China); Wu, Shengli, E-mail: slwu@mail.xjtu.edu.cn [Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi’an 710049 (China)

2017-04-11

A novel resonant high voltage power supply (HVPS) with zero voltage switching (ZVS), to reduce the voltage stress on switching devices and improve conversion efficiency, is proposed. The proposed HVPS includes a drive circuit, a transformer, several voltage multiplying circuits, and a regulator circuit. The HVPS contains several secondary windings that can be precisely regulated. The proposed HVPS performed better than the traditional resistor voltage divider, which requires replacing matching resistors resulting in resistor dispersibility in the Micro-Channel Plate (MCP). The equivalent circuit of the proposed HVPS was established and the operational principle analyzed. The entire switching element can achieve ZVS, which was validated by a simulation and experiments. The properties of this HVPS were tested including minimum power loss (240 mW), maximum power loss (1 W) and conversion efficiency (85%). The results of this research are that the proposed HVPS was suitable for driving the micro-channel plate photomultiplier tube (MCP-PMT). It was therefore adopted to test the MCP-PMT, which will be used in Daya Bay reactor neutrino experiment II in China.

Effects of nonlinear rheology, temperature and anisotropy on the relationship between age and depth at ice divides

Directory of Open Access Journals (Sweden)

C. Martín

2012-10-01

Full Text Available Ice flow in divide areas is strongly anisotropic. The evolution of ice fabric, from the onset of divide flow towards steady state with a fully developed fabric, has been shown to profoundly affect both the stratigraphy and surface topography of ice divides. Here, we investigate the effects of ice flow on the age-versus-depth relationship at ice divides by using a full Stokes thermomechanical model with a non-linear anisotropic constitutive relation between stress and strain rates. We compare our results with analytical approximations commonly employed in age–depth predictions, such as the Dansgaard and Lliboutry approximations. We show that these approximations systematically underestimate the age of ice at fully developed divides by as much as one order of magnitude. We also show that divides with fully developed fabric are ideal locations for ice-core extraction because ice under them can be up to one order of magnitude older than ice at the same depth at the flanks. In addition, these divides have a distinctive morphological structure that allows them to be clearly identified from satellite imagery or ground-penetrating radar data.

Quick-low-density parity check and dynamic threshold voltage optimization in 1X nm triple-level cell NAND flash memory with comprehensive analysis of endurance, retention-time, and temperature variation

Science.gov (United States)

Doi, Masafumi; Tokutomi, Tsukasa; Hachiya, Shogo; Kobayashi, Atsuro; Tanakamaru, Shuhei; Ning, Sheyang; Ogura Iwasaki, Tomoko; Takeuchi, Ken

2016-08-01

NAND flash memory’s reliability degrades with increasing endurance, retention-time and/or temperature. After a comprehensive evaluation of 1X nm triple-level cell (TLC) NAND flash, two highly reliable techniques are proposed. The first proposal, quick low-density parity check (Quick-LDPC), requires only one cell read in order to accurately estimate a bit-error rate (BER) that includes the effects of temperature, write and erase (W/E) cycles and retention-time. As a result, 83% read latency reduction is achieved compared to conventional AEP-LDPC. Also, W/E cycling is extended by 100% compared with conventional Bose-Chaudhuri-Hocquenghem (BCH) error-correcting code (ECC). The second proposal, dynamic threshold voltage optimization (DVO) has two parts, adaptive V Ref shift (AVS) and V TH space control (VSC). AVS reduces read error and latency by adaptively optimizing the reference voltage (V Ref) based on temperature, W/E cycles and retention-time. AVS stores the optimal V Ref’s in a table in order to enable one cell read. VSC further improves AVS by optimizing the voltage margins between V TH states. DVO reduces BER by 80%.

Additional ion bombardment in PVD processes generated by a superimposed pulse bias voltage

International Nuclear Information System (INIS)

Olbrich, W.; Kampschulte, G.

1993-01-01

The superimposed pulse bias voltage is a tool to apply an additional ion bombardment during deposition in physical vapour deposition (PVD) processes. It is generated by the combination of a d.c. ground voltage and a higher d.c. pulse voltage. Using a superimposed pulse bias voltage in ion-assisted PVD processes effects an additional all-around ion bombardment on the surface with ions of higher energy. Both metal and reactive or inert-gas ions are accelerated to the surface. The basic principles and important characteristics of this newly developed process such as ion fluxes or deposition rates are shown. Because of pulsing the high voltage, the deposition temperature does not increase much. The adhesion, structure, morphology and internal stresses are influenced by these additional ion impacts. The columnar growth of the deposited films could be suppressed by using the superimposed pulse bias voltage without increasing the deposition temperature. Different metallizations (Cr and Cu) produced by arc and sputter ion plating are investigated. Carbon-fibre-reinforced epoxy are coated with PVD copper films for further treatment in electrochemical processes. (orig.)

Voltage fluctuations in granular superconductors in the perpendicular configuration

International Nuclear Information System (INIS)

Gerashchenko, O V

2003-01-01

The spectral density of voltage fluctuations in granular YBa 2 Cu 3 O 7-δ superconductors in the perpendicular configuration has been studied in the flux flow mode. It has been found that, in this case, the 1/f-voltage noise observed depends weakly on temperature and is associated with motion of a magnetic flux in the superconductor. A comparison of the data obtained with the results of previous measurements in parallel configuration has shown that voltage noise is produced by a single common source, which is presumably associated with self-organization of the critical state in granular superconductors

Quantitative Temperature Dependence of Longitudinal Spin Seebeck Effect at High Temperatures

Directory of Open Access Journals (Sweden)

Ken-ichi Uchida

2014-11-01

Full Text Available We report temperature-dependent measurements of longitudinal spin Seebeck effects (LSSEs in Pt/Y_{3}Fe_{5}O_{12} (YIG/Pt systems in a high temperature range from room temperature to above the Curie temperature of YIG. The experimental results show that the magnitude of the LSSE voltage in the Pt/YIG/Pt systems rapidly decreases with increasing the temperature and disappears above the Curie temperature. The critical exponent of the LSSE voltage in the Pt/YIG/Pt systems at the Curie temperature is estimated to be 3, which is much greater than that for the magnetization curve of YIG. This difference highlights the fact that the mechanism of the LSSE cannot be explained in terms of simple static magnetic properties in YIG.

Voltage current characteristics of type III superconductors

International Nuclear Information System (INIS)

Dorofejev, G.L.; Imenitov, A.B.; Klimenko, E.Y.

1980-01-01

An adequate description of voltage-current characteristics is important in order to understand the nature of high critical current for the electrodynamic construction of type-III superconductors and for commercial superconductor specification. Homogeneous monofilament and multifilament Nb-Ti, Nb-Zr,Nb 3 Sn wires were investigated in different ranges of magnetic field, temperature and current. The shape of the voltage-current characteristics of multifilament wires, and the parameter's dependence on temperature and magnetic field may be explained qualitatively by the longitudinal heterogeneous nature of the filaments. A method of attaining the complete specification of the wire's electro-physical properties is proposed. It includes the traditional description of a critical surface (i.e. the surface corresponding to a certain conventional effective resistivity in T,B,J-space) and a description of any increasing parameter that depends on B and T. (author)

Voltage current characteristics of type III superconductors

Energy Technology Data Exchange (ETDEWEB)

Dorofeiev, G L; Imenitov, A B; Klimenko, E Y [Gosudarstvennyi Komitet po Ispol' zovaniyu Atomnoi Ehnergii SSSR, Moscow. Inst. Atomnoi Ehnergii

1980-06-01

An adequate description of voltage-current characteristics is important in order to understand the nature of high critical current for the electrodynamic construction of type-III superconductors and for commercial superconductor specification. Homogeneous monofilament and multifilament Nb-Ti, Nb-Zr,Nb/sub 3/Sn wires were investigated in different ranges of magnetic field, temperature and current. The shape of the voltage-current characteristics of multifilament wires, and the parameter's dependence on temperature and magnetic field may be explained qualitatively by the longitudinal heterogeneous nature of the filaments. A method of attaining the complete specification of the wire's electro-physical properties is proposed. It includes the traditional description of a critical surface (i.e. the surface corresponding to a certain conventional effective resistivity in T,B,J-space) and a description of any increasing parameter that depends on B and T.

Mitigation of Voltage Sags in CIGRE Low Voltage Distribution Network

DEFF Research Database (Denmark)

Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar

2013-01-01

Any problem in voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM), Dynamic Voltage Restorer (DVR) etc. are commonly used for the mitigation of voltage p....... The compensation of voltage sags in the different parts of CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0.......Any problem in voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM), Dynamic Voltage Restorer (DVR) etc. are commonly used for the mitigation of voltage...... problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate voltage sags in the CIGRE Low Voltage (LV) test network and networks like this. The voltage sags, for the tested cases in the CIGRE LV test network are mainly due to three phase faults...

Modulation Technique for Four-Leg Voltage Source Inverter without a Look-Up Table

DEFF Research Database (Denmark)

Ebrahimzadeh, Esmaeil; Farhangi, Shahrokh; Iman-Eini, Hossein

2016-01-01

Three-dimensional space-vector modulation (3D SVM) has more popularity among the other modulation techniques of the four-leg inverter due to higher DC-link voltage utilisation. Sequencing schemes of the switching vectors in the 3D SVM are divided into Class I and II categories. Each of these clas...

Development of a New Cascade Voltage-Doubler for Voltage Multiplication

OpenAIRE

Toudeshki, Arash; Mariun, Norman; Hizam, Hashim; Abdul Wahab, Noor Izzri

2014-01-01

For more than eight decades, cascade voltage-doubler circuits are used as a method to produce DC output voltage higher than the input voltage. In this paper, the topological developments of cascade voltage-doublers are reviewed. A new circuit configuration for cascade voltage-doubler is presented. This circuit can produce a higher value of the DC output voltage and better output quality compared to the conventional cascade voltage-doubler circuits, with the same number of stages.

First unitary, then divided: the temporal dynamics of dividing attention.

Science.gov (United States)

Jefferies, Lisa N; Witt, Joseph B

2018-04-24

Whether focused visual attention can be divided has been the topic of much investigation, and there is a compelling body of evidence showing that, at least under certain conditions, attention can be divided and deployed as two independent foci. Three experiments were conducted to examine whether attention can be deployed in divided form from the outset, or whether it is first deployed as a unitary focus before being divided. To test this, we adapted the methodology of Jefferies, Enns, and Di Lollo (Journal of Experimental Psychology: Human Perception and Performance 40: 465, 2014), who used a dual-stream Attentional Blink paradigm and two letter-pair targets. One aspect of the AB, Lag-1 sparing, has been shown to occur only if the second target pair appears within the focus of attention. By presenting the second target pair at various spatial locations and assessing the magnitude of Lag-1 sparing, we probed the spatial distribution of attention. By systematically manipulating the stimulus-onset-asynchrony between the targets, we also tracked changes to the spatial distribution of attention over time. The results showed that even under conditions which encourage the division of attention, the attentional focus is first deployed in unitary form before being divided. It is then maintained in divided form only briefly before settling on a single location.

Solar Energy Measurement Using Arduino

OpenAIRE

Jumaat Siti Amely; Othman Mohamad Hilmi

2018-01-01

This project aims to develop a measurement of solar energy using Arduino Board technology. In this research, four parameters that been measured are temperature, light intensity, voltage and current. The temperature was measured using temperature sensor. The light intensity was measured using light dependent resistor (LDR) sensor. The voltage was measured using the voltage divider because the voltage generated by the solar panel are large for the Arduino as receiver. Lastly for the current was...

Bias voltage dependence of tunneling magnetoresistance in granular C60–Co films with current-perpendicular-to-plane geometry

International Nuclear Information System (INIS)

Sakai, Seiji; Mitani, Seiji; Matsumoto, Yoshihiro; Entani, Shiro; Avramov, Pavel; Ohtomo, Manabu; Naramoto, Hiroshi; Takanashi, Koki

2012-01-01

Voltage-dependence of the tunneling magnetoresistance effect in the granular C 60 –Co films has been investigated for the samples with the current-perpendicular-to-plane geometry. The transport measurements under this geometry demonstrate that the granular C 60 –Co films show an unusual exponential bias voltage dependence of the magnetoresistance ratio down to zero voltage. Small characteristic energies of less than 10's meV are derived from the temperature dependences of the characteristic voltage in the exponential relationship. Considering the magnitudes of the voltage drop between Co nanoparticles and also the effect of cotunneling on the energy values, the characteristic energies for the voltage-induced degradation of the spin polarization are found to show a satisfactory agreement with that for the thermally-induced one. It can be reasonably expected that the onset of magnetic disorder to the localized d-electron spins at the interface region of the C 60 -based matrix (C 60 –Co compound) with Co nanoparticles leading to the unusual voltage and temperature dependence of the magnetoresistance ratio and the spin polarization at low temperatures. - Highlights: ► Unusual voltage dependence of the TMR effect in granular C 60 –Co films is studied. ► Linear temperature-characteristic voltage dependence in the MR–V relationship. ► Spin-flip scattering by the exchange-coupled d-electron spins at the interface.

Suppressing voltage transients in high voltage power supplies

International Nuclear Information System (INIS)

Lickel, K.F.; Stonebank, R.

1979-01-01

A high voltage power supply for an X-ray tubes includes voltage adjusting means, a high voltage transformer, switch means connected to make and interrupt the primary current of the transformer, and over-voltage suppression means to suppress the voltage transient produced when the current is switched on. In order to reduce the power losses in the suppression means, an impedance is connected in the transformer primary circuit on operation of the switch means and is subsequently short-circuited by a switch controlled by a timer after a period which is automatically adjusted to the duration of the transient overvoltage. (U.K.)

A fractional-N frequency divider for multi-standard wireless transceiver fabricated in 0.18 μm CMOS process

Science.gov (United States)

Wang, Jiafeng; Fan, Xiangning; Shi, Xiaoyang; Wang, Zhigong

2017-12-01

With the rapid evolution of wireless communication technology, integrating various communication modes in a mobile terminal has become the popular trend. Because of this, multi-standard wireless technology is one of the hot spots in current research. This paper presents a wideband fractional-N frequency divider of the multi-standard wireless transceiver for many applications. High-speed divider-by-2 with traditional source-coupled-logic is designed for very wide band usage. Phase switching technique and a chain of divider-by-2/3 are applied to the programmable frequency divider with 0.5 step. The phase noise of the whole frequency synthesizer will be decreased by the narrower step of programmable frequency divider. Δ-Σ modulator is achieved by an improved MASH 1-1-1 structure. This structure has excellent performance in many ways, such as noise, spur and input dynamic range. Fabricated in TSMC 0.18μm CMOS process, the fractional-N frequency divider occupies a chip area of 1130 × 510 μm2 and it can correctly divide within the frequency range of 0.8-9 GHz. With 1.8 V supply voltage, its division ratio ranges from 62.5 to 254 and the total current consumption is 29 mA.

Calibration of kV measurers with the practical peak voltage (IEC 1676)

International Nuclear Information System (INIS)

Becker, Paulo H.B.; Peres, Marcos A.L.; Ludwig, Jaime L.; Chernicharo, Carlos C.

2002-01-01

The IEC 1676 standard introduces a new quantity for the measurements of the high voltages applied to the X ray tubes used for diagnosis, the 'Practical Peak Voltage' (PPV). In order to start the introduction of this new quantity in Brazil the National Laboratory for Metrology of Ionizing Radiation has developed a procedure for calibrating measuring instruments in this quantity. This procedure is based in the same set up used for the calibration of the conventional kVp, which consists in a high voltage divider (Dynalyser III from Radcal Corporation), a fast analogue to digital conversion board and a data acquisition software. In order to evaluate this procedure a commercial kVp measure instrument that is able to measure PPV (Universal Diavolt from PTW) was calibrated and the results compared. This work presents a summary of the procedure developed and the results obtained with the comparison. (author)

Conquering the digital divide: Botswana and South Korea digital divide status and interventions

Directory of Open Access Journals (Sweden)

Nonofo C. Sedimo

2011-11-01

Objectives: Bridging the digital divide and narrowing the intra-national divide brings about global information and communication technology (ICT usage that translates into changing work patterns and eventually transformed economies. This article outlines the different interventions implemented in Botswana to bridge the divide. The South Korean experience in bridging the divide is discussed so as to serve as lessons on how to effectively bridge the divide to Botswana’s initiatives. Method: Using a mix of exploratory and empirical study, this article presents the findings on the status of ICT uptake in Botswana and investigates the level of the digital divide in the country. Results: The results of the study show that the digital divide is much more evident in Botswana than in South Korea. South Korea has put in place robust strategic initiatives towards reducing the digital divide and this has largely transcended into its transformation into a full-fledged knowledge society. Conclusion: This article is timely as it unearths the different pointers that may be utilised in policy formation and what interventions need to be taken at both the individual and national level to bridge the digital divide.

Voltage-dependent gating in a "voltage sensor-less" ion channel.

Directory of Open Access Journals (Sweden)

Harley T Kurata

2010-02-01

Full Text Available The voltage sensitivity of voltage-gated cation channels is primarily attributed to conformational changes of a four transmembrane segment voltage-sensing domain, conserved across many levels of biological complexity. We have identified a remarkable point mutation that confers significant voltage dependence to Kir6.2, a ligand-gated channel that lacks any canonical voltage-sensing domain. Similar to voltage-dependent Kv channels, the Kir6.2[L157E] mutant exhibits time-dependent activation upon membrane depolarization, resulting in an outwardly rectifying current-voltage relationship. This voltage dependence is convergent with the intrinsic ligand-dependent gating mechanisms of Kir6.2, since increasing the membrane PIP2 content saturates Po and eliminates voltage dependence, whereas voltage activation is more dramatic when channel Po is reduced by application of ATP or poly-lysine. These experiments thus demonstrate an inherent voltage dependence of gating in a "ligand-gated" K+ channel, and thereby provide a new view of voltage-dependent gating mechanisms in ion channels. Most interestingly, the voltage- and ligand-dependent gating of Kir6.2[L157E] is highly sensitive to intracellular [K+], indicating an interaction between ion permeation and gating. While these two key features of channel function are classically dealt with separately, the results provide a framework for understanding their interaction, which is likely to be a general, if latent, feature of the superfamily of cation channels.

Transient voltage sharing in series-coupled high voltage switches

Directory of Open Access Journals (Sweden)

Editorial Office

1992-07-01

Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

Power conditioning using dynamic voltage restorers under different voltage sag types.

Science.gov (United States)

Saeed, Ahmed M; Abdel Aleem, Shady H E; Ibrahim, Ahmed M; Balci, Murat E; El-Zahab, Essam E A

2016-01-01

Voltage sags can be symmetrical or unsymmetrical depending on the causes of the sag. At the present time, one of the most common procedures for mitigating voltage sags is by the use of dynamic voltage restorers (DVRs). By definition, a DVR is a controlled voltage source inserted between the network and a sensitive load through a booster transformer injecting voltage into the network in order to correct any disturbance affecting a sensitive load voltage. In this paper, modelling of DVR for voltage correction using MatLab software is presented. The performance of the device under different voltage sag types is described, where the voltage sag types are introduced using the different types of short-circuit faults included in the environment of the MatLab/Simulink package. The robustness of the proposed device is evaluated using the common voltage sag indices, while taking into account voltage and current unbalance percentages, where maintaining the total harmonic distortion percentage of the load voltage within a specified range is desired. Finally, several simulation results are shown in order to highlight that the DVR is capable of effective correction of the voltage sag while minimizing the grid voltage unbalance and distortion, regardless of the fault type.

A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric

International Nuclear Information System (INIS)

Liu Chaowen; Xu Jingping; Liu Lu; Lu Hanhan; Huang Yuan

2016-01-01

A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson's equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored. (paper)

Mitigation of voltage sags in the distribution system with dynamic voltage restorer

International Nuclear Information System (INIS)

Viglas, D.; Belan, A.

2012-01-01

Dynamic voltage restorer is a custom power device that is used to improve voltage sags or swells in electrical distribution system. The components of the Dynamic Voltage Restorer consist of injection transformers, voltage source inverter, passive filters and energy storage. The main function of the Dynamic voltage restorer is used to inject three phase voltage in series and in synchronism with the grid voltages in order to compensate voltage disturbances. This article deals with mitigation of voltage sags caused by three-phase short circuit. Dynamic voltage restorer is modelled in MATLAB/Simulink. (Authors)

Transport characteristics of n-ZnO/p-Si heterojunction as determined from temperature dependent current–voltage measurements

Energy Technology Data Exchange (ETDEWEB)

Djiokap, S.R. Tankio, E-mail: stive.tankiodjiokap@nmmu.ac.za; Urgessa, Z.N.; Mbulanga, C.M.; Venter, A.; Botha, J.R.

2016-01-01

Zinc oxide (ZnO) nanorods have been synthesized by a two-step chemical bath deposition process on silicon substrates having different dopant densities and orientations. Scanning electron microscopy and X-ray diffraction analysis reveal that the orientation of the Si substrate does not affect the orientation, distribution or crystallinity of the nanostructures. The electrical properties of the ZnO/Si heterojunction are also investigated by current–voltage (I–V) measurements. The ideality factor is found to be 2.6 at 295 K, indicating that complex current transport mechanisms are at play. Temperature dependent I–V characteristics have been used to determine the dominant transport mechanism. The experimental results suggest that in the low bias region the current is dominated by a trap assisted multi-step tunneling process.

Effect of localized states on the current-voltage characteristics of metal-semiconductor contacts with thin interfacial layer

Science.gov (United States)

Chattopadhyay, P.

1994-10-01

The role of discrete localized states on the current-voltage characteristics of metal-semiconductor contact is examined. It is seen that, because of these localized states, the logarithmic current vs voltage characteristics become nonlinear. Such nonlinearity is found sensitive to the temperature, and the energy and density of the localized states. The predicted temperature dependence of barrier height and the current-voltage characteristics are in agreement with the experimental results of Aboelfotoh [ Phys. Rev. B39, 5070 (1989)].

Voltage regulating circuit

NARCIS (Netherlands)

2005-01-01

A voltage regulating circuit comprising a rectifier (2) for receiving an AC voltage (Vmains) and for generating a rectified AC voltage (vrec), and a capacitor (3) connected in parallel with said rectified AC voltage for providing a DC voltage (VDC) over a load (5), characterized by a unidirectional

Design of a Rad-Hard eFuse Trimming Circuit for Bandgap Voltage Reference for LHC Experiments Upgrades

CERN Document Server

Besirli, Mustafa; Koukab, Adil; Michelis, Stefano

A precise and stable reference voltage is required to generate a stable output voltage in DC/DC converters. This reference voltage must be independent of temperature, power supply, radiation, intrinsic technology mismatch and process variation. This master's thesis reports the development of a rad-hard bandgap voltage reference with electrical fuse (eFuse) based analog calibration circuit in a commercial 130nm technology. According to the test results, the maximum error in the bandgap voltage (300mV in this application) was reduced from ±30mV to less than ±0.6mV thanks to the eFuse trimming. A temperature, power supply, radiation, mismatch and process-independent reference voltage was generated to provide reference voltage to first (bPOL12V) and second (bPOL2V5) stage DC/DC converters. This circuit will be integrated in bPOL12V and bPOL2V5 converters for high-luminosity LHC upgrades.

Continental Divide Trail

Data.gov (United States)

Earth Data Analysis Center, University of New Mexico — This shapefile was created to show the proximity of the Continental Divide to the Continental Divide National Scenic Trail in New Mexico. This work was done as part...

A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric

Science.gov (United States)

Chaowen, Liu; Jingping, Xu; Lu, Liu; Hanhan, Lu; Yuan, Huang

2016-02-01

A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson's equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored. Project supported by the National Natural Science Foundation of China (No. 61176100).

High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

Science.gov (United States)

Van, Ngoc Huynh; Lee, Jae-Hyun; Sohn, Jung Inn; Cha, Seung Nam; Whang, Dongmok; Kim, Jong Min; Kang, Dae Joon

2014-05-21

We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.

Slow voltage oscillations in Ag-doped superconducting Y-Ba-Cu-O

International Nuclear Information System (INIS)

Altinkok, A.; Yetis, H.; Kilic, K.; Kilic, A.; Olutas, M.

2008-01-01

The time effects in Ag-doped YBa 2 Cu 3 O 7-x sample (YBCO/Ag) were examined by means of transport relaxation measurements (V-t curves). At well-defined values of transport current (I), temperature (T) and external magnetic field (H), an abrupt rise in sample voltage was observed at the early stage of the relaxation process. After reducing the initial current to a finite value, the sample voltage levels off within a very short time. The rapid voltage drops seen in V-t curves were attributed to the rapid dynamic reorganization of flux lines traversing the sample edges. These observations were also interpreted as an indication of doping of YBCO with Ag and easy suppression of superconducting order parameter due to the presence of Ag. In addition, we investigated the influence of bidirectional square wave (BSW) current on the evolution of V-t curves at different temperatures and external magnetic fields. It was observed that a nonlinear response seen in V-t curves to BSW current with sufficiently short periods or sufficiently low amplitude reflects itself as regular sinusoidal- type voltage oscillations, which were discussed mainly in terms of the dynamic competition between pinning and depinning

Development of high voltage PEEK wire with radiation-resistance and cryogenic characteristics

International Nuclear Information System (INIS)

Fujita, T.; Hirata, T.; Araki, S.; Ohara, H.; Nishimura, H.

1989-01-01

High voltage electric wires insulated with highly-refined polyetheretherketone (PEEK) have been developed for the wiring in fusion reactors, where the wire is required to withstand high voltage under high vacuum up to 10 -5 Torr. The PEEK wires having the advantages of PEEK resin including superior radiation resistance and cryogenic characteristics are usable over a wide range of temperature and in radiation fields. The results of withstand voltage tests proved that the PEEK wires exceeding 0.8 mm in insulation thickness withstand such specified high voltage conditions as 24 kV for 1 minutes by 10 times and 6.6 kV for 110 hours. The results also revealed that the withstand voltage is improved by providing a jacket layer over the insulation and decreased by periodical voltage charge, by bending of the specimen and by water in the conductor. This paper deal with the withstand voltage test results under varied conditions of the PEEK wires. (author)

Contact-free Stress Monitoring for User's Divided Attention

OpenAIRE

Shastri, Dvijesh; Wesley, Avinash; Pavlidis, Ioannis

2008-01-01

This research work demonstrates the feasibility of stress quantification in situations where the attention of the user is divided. Psychologically kosher (i.e., unobtrusive) quantification of stress and its correlation to user performance and emotion are of singular importance in man-machine interaction. We have also proved that talking on a cell phone during simulated driving increases the supraorbital skin temperature significantly. This finding clearly demonstrates that concurrent performa...

International Divider Walls

NARCIS (Netherlands)

Kruis, A.; Sneller, Lineke

2013-01-01

The subject of this teaching case is the Enterprise Resource Planning (ERP) system implementation at International Divider Walls, the world market leader in design, production, and sales of divider walls. The implementation in one of the divisions of this multinational company had been successful,

Beyond voltage-gated ion channels: Voltage-operated membrane proteins and cellular processes.

Science.gov (United States)

Zhang, Jianping; Chen, Xingjuan; Xue, Yucong; Gamper, Nikita; Zhang, Xuan

2018-04-18

Voltage-gated ion channels were believed to be the only voltage-sensitive proteins in excitable (and some non-excitable) cells for a long time. Emerging evidence indicates that the voltage-operated model is shared by some other transmembrane proteins expressed in both excitable and non-excitable cells. In this review, we summarize current knowledge about voltage-operated proteins, which are not classic voltage-gated ion channels as well as the voltage-dependent processes in cells for which single voltage-sensitive proteins have yet to be identified. Particularly, we will focus on the following. (1) Voltage-sensitive phosphoinositide phosphatases (VSP) with four transmembrane segments homologous to the voltage sensor domain (VSD) of voltage-gated ion channels; VSPs are the first family of proteins, other than the voltage-gated ion channels, for which there is sufficient evidence for the existence of the VSD domain; (2) Voltage-gated proton channels comprising of a single voltage-sensing domain and lacking an identified pore domain; (3) G protein coupled receptors (GPCRs) that mediate the depolarization-evoked potentiation of Ca 2+ mobilization; (4) Plasma membrane (PM) depolarization-induced but Ca 2+ -independent exocytosis in neurons. (5) Voltage-dependent metabolism of phosphatidylinositol 4,5-bisphosphate (PtdIns[4,5]P 2 , PIP 2 ) in the PM. These recent discoveries expand our understanding of voltage-operated processes within cellular membranes. © 2018 Wiley Periodicals, Inc.

The fabrication of 3-D nanostructures by a low- voltage EBL

Energy Technology Data Exchange (ETDEWEB)

Oh, Seung Hun [Department of Nano Science and Technology, Pusan National University (Korea, Republic of); Kim, Jae Gu [Department of Nano-Mechanical Systems, Korea Institute of Machinery and Materials (Korea, Republic of); Kim, Chang Seok [Department of Cogno-Mechatronics Engineering, Pusan National University (Korea, Republic of); Choi, Doo Sun; Chang, Sunghwan [Department of Nano-Mechanical Systems, Korea Institute of Machinery and Materials (Korea, Republic of); Jeong, Myung Yung, E-mail: myjeong@pusan.ac.kr [Department of Cogno-Mechatronics Engineering, Pusan National University (Korea, Republic of)

2011-02-15

Three-dimensional (3-D) structures are used in many applications, including the fabrication of opto-electronic and bio-MEMS devices. Among the various fabrication techniques available for 3-D structures, nano imprint lithography (NIL) is preferred for producing nanoscale 3-D patterns because of its simplicity, relatively short processing time, and high manufacturing precision. For efficient replication in NIL, a precise 3-D stamp must be used as an imprinting tool. Hence, we attempted the fabrication of original 3-D master molds by low-voltage electron beam lithography (EBL). We then fabricated polydimethylsiloxane (PDMS) stamps from the original 3-D mold via replica molding with ultrasonic vibration.First, we experimentally analyzed the characteristics of low-voltage EBL in terms of various parameters such as resist thickness, acceleration voltage, aperture size, and baking temperature. From these e-beam exposure experiments, we found that the exposure depth and width were almost saturated at 3 kV or lesser, even when the electron dosage was increased. This allowed for the fabrication of various stepped 3-D nanostructures at a low voltage. In addition, by using line-dose EBL, V-groove patterns could be fabricated on a cured electron resist (ER) at a low voltage and low baking temperature. Finally, the depth variation could be controlled to within 10 nm through superposition exposure at 1 kV. From these results, we determined the optimum electron beam exposure conditions for the fabrication of various 3-D structures on ERs by low-voltage EBL. We then fabricated PDMS stamps via the replica molding process.

Temperature-compensated pressure detectors and transmitter for use in hostile environment

International Nuclear Information System (INIS)

Di Noia, E.J.; Breunich, T.R.

1984-01-01

A pressure or differential pressure detector suitable for use in a hostile environment, for example, under high pressure, temperature, and radiation conditions in the containment vessel of a nuclear generating plant includes as a transducer a linear variable differential transformer (LVDT) disposed within a detector housing designed to withstand temperatures of about 260 deg C. A signal detecting and conditioning circuit remote from the detector housing includes a demodulator for producing X and Y demodulated signals respectively from A and B secondary windings of the LVDT, a summing circuit for producing a temperature analog voltage X + Y, a subtractor for providing a differential pressure analog voltage X - Y, and a multiplier for multiplying the differential pressure analog voltage X - Y by a temperature compensation voltage X + Y - Ref based on the temperature analog voltage to provide a resulting temperature-compensated differential pressure analog signal. (author)

Determination of the internal parameters of tc from the current-voltage characteristics

International Nuclear Information System (INIS)

Kaibyshev, V.Z.

1986-01-01

This paper proposes a method for determining the effective work function of a collector, the electron temperature, and the voltage drop in the interelectrode gap from the experimental vurrent-voltage characteristics (IVC). Analysis of the boundary conditions at the collector shows that as the emission from the collector increases the height of the potential jump retarding plasma electrons decrease

Low-temperature mobility measurements on CMOS devices

International Nuclear Information System (INIS)

Hairpetian, A.; Gitlin, D.; Viswanathan, C.R.

1989-01-01

The surface channel mobility of carriers in eta- and rho-MOS transistors fabricated in a CMOS process was accurately determined at low temperatures down to 5 Κ. The mobility was obtained by an accurate measurement of the inversion charge density using a split C-V technique and the conductance at low drain voltages. The split C-V technique was validated at all temperatures using a one-dimensional Poisson solver (MOSCAP), which was modified for low-temperature application. The mobility dependence on the perpendicular electric field for different substrate bias values appears to have different temperature dependence for eta- and rho-channel devices. The electron mobility increases with a decrease in temperature at all gate voltages. On the other hand, the hole mobility exhibits a different temperature behavior depending upon whether the gate voltage corresponds to strong inversion or is near threshold

Stray voltage mitigation

Energy Technology Data Exchange (ETDEWEB)

Jamali, B.; Piercy, R.; Dick, P. [Kinetrics Inc., Toronto, ON (Canada). Transmission and Distribution Technologies

2008-04-09

This report discussed issues related to farm stray voltage and evaluated mitigation strategies and costs for limiting voltage to farms. A 3-phase, 3-wire system with no neutral ground was used throughout North America before the 1930s. Transformers were connected phase to phase without any electrical connection between the primary and secondary sides of the transformers. Distribution voltage levels were then increased and multi-grounded neutral wires were added. The earth now forms a parallel return path for the neutral current that allows part of the neutral current to flow continuously through the earth. The arrangement is responsible for causing stray voltage. Stray voltage causes uneven milk production, increased incidences of mastitis, and can create a reluctance to drink water amongst cows when stray voltages are present. Off-farm sources of stray voltage include phase unbalances, undersized neutral wire, and high resistance splices on the neutral wire. Mitigation strategies for reducing stray voltage include phase balancing; conversion from single to 3-phase; increasing distribution voltage levels, and changing pole configurations. 22 refs., 5 tabs., 13 figs.

A novel on-chip high to low voltage power conversion circuit

International Nuclear Information System (INIS)

Wang Hui; Wang Songlin; Mou Zaixin; Guo Baolong; Lai Xinquan; Ye Qiang; Li Xianrui

2009-01-01

A novel power supply transform technique for high voltage IC based on the TSMC 0.6 μm BCD process is achieved. An adjustable bandgap voltage reference is presented which is different from the traditional power supply transform technique. It can be used as an internal power supply for high voltage IC by using the push-pull output stage to enhance its load capability. High-order temperature compensated circuit is designed to ensure the precision of the reference. Only 0.01 mm 2 area is occupied using this novel power supply technique. Compared with traditional technique, 50% of the area is saved, 40% quiescent power loss is decreased, and the temperature coefficient of the reference is only 4.48 ppm/deg. C. Compared with the traditional LDO (low dropout) regulator, this power conversion architecture does not need external output capacitance and decreases the chip-pin and external components, so the PCB area and design cost are also decreased. The testing results show that this circuit works well.

A novel on-chip high to low voltage power conversion circuit

Energy Technology Data Exchange (ETDEWEB)

Wang Hui; Wang Songlin; Mou Zaixin; Guo Baolong [Institute of Mechano-electronic Engineering, Xidian University, Xi' an 71007 (China); Lai Xinquan; Ye Qiang; Li Xianrui, E-mail: whui94@126.co [Institute of Electronic CAD, Xidian University, Xi' an 710071 (China)

2009-03-15

A novel power supply transform technique for high voltage IC based on the TSMC 0.6 mum BCD process is achieved. An adjustable bandgap voltage reference is presented which is different from the traditional power supply transform technique. It can be used as an internal power supply for high voltage IC by using the push-pull output stage to enhance its load capability. High-order temperature compensated circuit is designed to ensure the precision of the reference. Only 0.01 mm{sup 2} area is occupied using this novel power supply technique. Compared with traditional technique, 50% of the area is saved, 40% quiescent power loss is decreased, and the temperature coefficient of the reference is only 4.48 ppm/deg. C. Compared with the traditional LDO (low dropout) regulator, this power conversion architecture does not need external output capacitance and decreases the chip-pin and external components, so the PCB area and design cost are also decreased. The testing results show that this circuit works well.

A quantum accurate waveform synthesizer as a voltage reference for an electronic primary thermometer

Science.gov (United States)

Pollarolo, Alessio; Benz, Samuel; Rogalla, Horst; Dresselhaus, Paul

2014-03-01

We are using a quantum voltage noise source (QVNS) for use as an intrinsically accurate voltage reference for a new type of electronic temperature standard. In Johnson Noise Thermometry (JNT) the noise of a resistor is used to measure temperature or Boltzmann's constant k, because the Nyquist equation =4kTR Δf shows that the power spectral density is proportional to k, temperature T, resistance R and measurement bandwidth Δf . The QVNS is a digital to analog converter used to synthesize a voltage waveform that resembles pseudo-random noise comparable in amplitude to the resistor noise. The signal generated is a frequency comb of harmonics tones that are equally spaced in frequency, all having identical amplitudes but random phases. The QVNS is an array superconducting Josephson junctions that are biased with a pulsed waveform clocked at 10 GHz. The accuracy of the voltage waveform derives from the identical voltage pulses produced by each junction that are perfectly quantized because their time-integrals are always equal to flux quantum h/2 e. The time-dependent output voltage waveform is determined by the number of pulses and their density in time. The measurement electronics exploits cross-correlation techniques to reduce the uncorrelated measurement noise so as to reveal the resistor noise, both of which are on the order of 2 nV/ √Hz. With this technique we have measured k with an uncertainty of about one part in 105, which we hope to improve by another order of magnitude with further research.

Absolute Determination of High DC Voltages by Means of Frequency Measurement

Science.gov (United States)

Peier, Dirk; Schulz, Bernd

1983-01-01

A novel absolute measuring procedure is presented for the definition of fixed points of the voltage in the 100 kV range. The method is based on transit time measurements with accelerated electrons. By utilizing the selective interaction of a monoenergetic electron beam with the electromagnetic field of a special cavity resonator, the voltage is referred to fundamental constants and the base unit second. Possible balance voltages are indicated by a current detector. Experimental investigations are carried out with resonators in the normal conducting range. With a copper resonator operating at the temperature of boiling nitrogen (77 K), the relative uncertainty of the voltage points is estimated to be +/- 4 × 10-4. The technically realizable uncertainty can be reduced to +/- 1 × 10-5 by the proposed application of a superconducting niobium resonator. Thus this measuring device becomes suitable as a primary standard for the high-voltage range.

On-state voltage drop based power limit detection of IGBT inverters

DEFF Research Database (Denmark)

Trintis, Ionut; Ghimire, Pramod; Munk-Nielsen, Stig

2015-01-01

Power density is a key performance factor in order to reduce the cost and size of a power converter. Because of the unknown junction temperature, today’s design margins are relatively high to ensure safe and a reliable operation. In this paper, the on-state voltage drop is measured online for all...... insulated gate bipolar transistors (IGBTs) in the inverter, using advanced gate driver. The die temperature is estimated and monitored on each device during power converter operation. Based on the monitored temperature in real time, the maximum power capability is detected. The output power is increased...... until a safe operating temperature of power modules. This enable a power density is increased by 11.16 kW/litre to 19.13 kW/litre in a low voltage power stack which is typically used in wind power converters. Experiment results are shown for safe operation of converter at around 1.2 MW, which is built...

Unidirectional Spin-Wave-Propagation-Induced Seebeck Voltage in a PEDOT:PSS/YIG Bilayer

Science.gov (United States)

Wang, P.; Zhou, L. F.; Jiang, S. W.; Luan, Z. Z.; Shu, D. J.; Ding, H. F.; Wu, D.

2018-01-01

We clarify the physical origin of the dc voltage generation in a bilayer of a conducting polymer film and a micrometer-thick magnetic insulator Y3Fe5O12 (YIG) film under ferromagnetic resonance and/or spin wave excitation conditions. The previous attributed mechanism, the inverse spin Hall effect in the polymer [Nat. Mater. 12, 622 (2013), 10.1038/nmat3634], is excluded by two control experiments. We find an in-plane temperature gradient in YIG which has the same angular dependence with the generated voltage. Both vanish when the YIG thickness is reduced to a few nanometers. Thus, we argue that the dc voltage is governed by the Seebeck effect in the polymer, where the temperature gradient is created by the nonreciprocal magnetostatic surface spin wave propagation in YIG.

Leakage Currents in Low-Voltage PME and BME Ceramic Capacitors

Science.gov (United States)

Teverovsky, Alexander

2015-01-01

Introduction of BME capacitors to high-reliability electronics as a replacement for PME capacitors requires better understanding of changes in performance and reliability of MLCCs to set justified screening and qualification requirements. In this work, absorption and leakage currents in various lots of commercial and military grade X7R MLCCs rated to 100V and less have been measured to reveal difference in behavior of PME and BME capacitors in a wide range of voltages and temperatures. Degradation of leakage currents and failures in virgin capacitors and capacitors with introduced cracks has been studied at different voltages and temperatures during step stress highly accelerated life testing. Mechanisms of charge absorption, conduction and degradation have been discussed and a failure model in capacitors with defects suggested.

Current-voltage characteristics of individual conducting polymer nanotubes and nanowires

Institute of Scientific and Technical Information of China (English)

Long Yun-ze; Yin Zhi-Hua; Li Meng-Meng; Gu Chang-Zhi; Duvail Jean-Luc; Jin Ai-zi; Wan Mei-xiang

2009-01-01

We report the current-voltage (Ⅰ-Ⅴ) characteristics of individual polypyrrole nanotubes and poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires in a temperature range from 300 K to 2 K. Considering the complex structures of such quasi-one-dimensional systems with an array of ordered conductive regions separated by disordered barriers, we use the extended fluctuation-induced tunneling (FIT) and thermal excitation model (Kaiser expression) to fit the temperature and electric-field dependent Ⅰ-Ⅴ curves. It is found that the Ⅰ-Ⅴ data measured at higher temperatures or higher voltages can be well fitted by the Kaiser expression. However, the low-temperature data around the zero bias clearly deviate from those obtained from this model. The deviation (or zero-bias conductance suppression)could be possibly ascribed to the occurrence of the Coulomb-gap in the density of states near the Femi level and/or the enhancement of electron-electron interaction resulting from nanosize effects, which have been revealed in the previous studies on low-temperature electronic transport in conducting polymer films, pellets and nanostructures. In addition,similar Ⅰ-Ⅴ characteristics and deviation are also observed in an isolated K0.27MnO2 nanowire.

Reliability of supply of switchgear for auxiliary low voltage in substations extra high voltage to high voltage

Directory of Open Access Journals (Sweden)

Perić Dragoslav M.

2015-01-01

Full Text Available Switchgear for auxiliary low voltage in substations (SS of extra high voltages (EHV to high voltage (HV - SS EHV/HV kV/kV is of special interest for the functioning of these important SS, as it provides a supply for system of protection and other vital functions of SS. The article addresses several characteristic examples involving MV lines with varying degrees of independence of their supply, and the possible application of direct transformation EHV/LV through special voltage transformers. Auxiliary sources such as inverters and diesel generators, which have limited power and expensive energy, are also used for the supply of switchgear for auxiliary low voltage. Corresponding reliability indices are calculated for all examples including mean expected annual engagement of diesel generators. The applicability of certain solutions of switchgear for auxiliary low voltage SS EHV/HV, taking into account their reliability, feasibility and cost-effectiveness is analyzed too. In particular, the analysis of applications of direct transformation EHV/LV for supply of switchgear for auxiliary low voltage, for both new and existing SS EHV/HV.

Charge-pump voltage converter

Science.gov (United States)

Brainard, John P [Albuquerque, NM; Christenson, Todd R [Albuquerque, NM

2009-11-03

A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

High voltage systems

International Nuclear Information System (INIS)

Martin, M.

1991-01-01

Industrial processes usually require electrical power. This power is used to drive motors, to heat materials, or in electrochemical processes. Often the power requirements of a plant require the electric power to be delivered at high voltage. In this paper high voltage is considered any voltage over 600 V. This voltage could be as high as 138,000 V for some very large facilities. The characteristics of this voltage and the enormous amounts of power being transmitted necessitate special safety considerations. Safety must be considered during the four activities associated with a high voltage electrical system. These activities are: Design; Installation; Operation; and Maintenance

Gentilly 2 divider plate replacement

International Nuclear Information System (INIS)

Forest, J.; Klisel, E.; McClellan, G.; Schnelder, W.

1995-01-01

The steam generators at the Gentilly 2 Nuclear Plant in operation since 1983 were built with primary divider plates of a bolted panel configuration. During a routine outage inspection, it was noted that two bolts had dislodged from the divider and were located lying in the primary head. Subsequent inspections revealed erosion damage to a substantial number of divider plate bolts and to a lesser extent, to the divider plate itself. After further inspection and repair the units were returned to operation, however, it was determined that a permanent replacement of the primary divider plates was going to be necessary. After evaluation of various options, it was decided that the panel type dividers would be replaced with a single piece floating design. The divider itself was to be of a one piece all-welded arrangement to be constructed from individual panels to be brought in through the manways. In view of the strength limitations of the bolted attachment of the upper seat bar to the tubesheet, a new welded seat bar was provided. To counteract erosion concerns, the new divider is fitted with erosion resistant inserts or weld buildup and with improved sealing features in order to minimize leakage and erosion. At an advanced stage in the design and manufacture of the components, the issue of divider strength during LOCA conditions came into focus. Analysis was performed to determine the strength and/or failure characteristics of the divider to a variety of small and large LOCA conditions. The paper describes the diagnosis of the original divider plates and the design, manufacture, field mobilization, installation and subsequent operation of the replacement divider plates. (author)

Estimation of Medium Voltage Cable Parameters for PD Detection

DEFF Research Database (Denmark)

Villefrance, Rasmus; Holbøll, Joachim T.; Henriksen, Mogens

1998-01-01

Medium voltage cable characteristics have been determined with respect to the parameters having influence on the evaluation of results from PD-measurements on paper/oil and XLPE-cables. In particular, parameters essential for discharge quantification and location were measured. In order to relate...... and phase constants. A method to estimate this propagation constant, based on high frequency measurements, will be presented and will be applied to different cable types under different conditions. The influence of temperature and test voltage was investigated. The relevance of the results for cable...

Slow voltage oscillations in Ag-doped superconducting Y-Ba-Cu-O

Energy Technology Data Exchange (ETDEWEB)

Altinkok, A. [Abant Izzet Baysal University, Department of Physics, Turgut Gulez Research Laboratory, 14280 Bolu (Turkey)], E-mail: altinkok_a@ibu.edu.tr; Yetis, H.; Kilic, K.; Kilic, A.; Olutas, M. [Abant Izzet Baysal University, Department of Physics, Turgut Gulez Research Laboratory, 14280 Bolu (Turkey)

2008-09-15

The time effects in Ag-doped YBa{sub 2}Cu{sub 3}O{sub 7-x} sample (YBCO/Ag) were examined by means of transport relaxation measurements (V-t curves). At well-defined values of transport current (I), temperature (T) and external magnetic field (H), an abrupt rise in sample voltage was observed at the early stage of the relaxation process. After reducing the initial current to a finite value, the sample voltage levels off within a very short time. The rapid voltage drops seen in V-t curves were attributed to the rapid dynamic reorganization of flux lines traversing the sample edges. These observations were also interpreted as an indication of doping of YBCO with Ag and easy suppression of superconducting order parameter due to the presence of Ag. In addition, we investigated the influence of bidirectional square wave (BSW) current on the evolution of V-t curves at different temperatures and external magnetic fields. It was observed that a nonlinear response seen in V-t curves to BSW current with sufficiently short periods or sufficiently low amplitude reflects itself as regular sinusoidal- type voltage oscillations, which were discussed mainly in terms of the dynamic competition between pinning and depinning.

Influence of voltage on magnetization of ferromagnetic semiconductors with colossal magnetoresistance

International Nuclear Information System (INIS)

Povzner, A.A.; Volkov, A.G.

2017-01-01

Graphical abstract: We investigate nonequilibrium states of strongly correlated electron subsystem of lanthanum manganite, resulting in an external electric field. It is shown that the Joule heat leads to localization of electrons. As result, electric resistance, magnetization and other characteristics of the electronic system are depending on the applied voltage. This leads to the formation of the bistable state of the electronic system in the vicinity of the Curie point in an external electric field. This manifests itself in non-linear current-voltage characteristics of these substances, and should lead to oscillations of the magnetization and current. - Abstract: The nonequilibrium processes of “self-heating” arising during the flow of electric current are studied for ferromagnetic semiconductors with colossal magnetoresistance near the Curie temperature. These processes lead to the emergence of “hot” paramagnons and the destruction of ferromagnetic order. The solution to the heat balance equation takes into account the temperature dependence of the electrical conductivity caused by Anderson localization of electrons due to their scattering on magnetic inhomogeneities. Description of delocalized electrons subsystem takes into account the spin-flip processes leading to the double exchange. At that, the value of the Anderson percolation threshold and the double exchange depends on the amplitude of spin fluctuations. It was found that N-shaped current-voltage characteristics and hysteresis dependencies of magnetization on the voltage arise in a steady state due to the emergence of “hot” (by internal sample temperature) semiconductor paramagnetic phase. It is shown that the occurrence of self-oscillations of current and magnetization there may be.

Influence of voltage on magnetization of ferromagnetic semiconductors with colossal magnetoresistance

Energy Technology Data Exchange (ETDEWEB)

Povzner, A.A., E-mail: a.a.povzner@urfu.ru; Volkov, A.G., E-mail: agvolkov@yandex.ru

2017-06-15

Graphical abstract: We investigate nonequilibrium states of strongly correlated electron subsystem of lanthanum manganite, resulting in an external electric field. It is shown that the Joule heat leads to localization of electrons. As result, electric resistance, magnetization and other characteristics of the electronic system are depending on the applied voltage. This leads to the formation of the bistable state of the electronic system in the vicinity of the Curie point in an external electric field. This manifests itself in non-linear current-voltage characteristics of these substances, and should lead to oscillations of the magnetization and current. - Abstract: The nonequilibrium processes of “self-heating” arising during the flow of electric current are studied for ferromagnetic semiconductors with colossal magnetoresistance near the Curie temperature. These processes lead to the emergence of “hot” paramagnons and the destruction of ferromagnetic order. The solution to the heat balance equation takes into account the temperature dependence of the electrical conductivity caused by Anderson localization of electrons due to their scattering on magnetic inhomogeneities. Description of delocalized electrons subsystem takes into account the spin-flip processes leading to the double exchange. At that, the value of the Anderson percolation threshold and the double exchange depends on the amplitude of spin fluctuations. It was found that N-shaped current-voltage characteristics and hysteresis dependencies of magnetization on the voltage arise in a steady state due to the emergence of “hot” (by internal sample temperature) semiconductor paramagnetic phase. It is shown that the occurrence of self-oscillations of current and magnetization there may be.

The effects of fabrication temperature on current-voltage characteristics and energy efficiencies of quantum dot sensitized ZnOH-GO hybrid solar cells

International Nuclear Information System (INIS)

Islam, S. M. Z.; Gayen, Taposh; Tint, Naing; Alfano, Robert; Shi, Lingyan; Seredych, Mykola; Bandosz, Teresa J.

2014-01-01

The effects of fabrication temperature are investigated on the performance of CdSe quantum dot (QD)-sensitized hybrid solar cells of the composite material of zinc (hydr)oxide (ZnOH-GO)with 2 wt. % graphite oxide. The current-voltage (I-V) and photo-current measurements show that higher fabrication temperatures yield greater photovoltaic power conversion efficiencies that essentially indicate more efficient solar cells. Two Photon Fluorescence images show the effects of temperature on the internal morphologies of the solar devices based on such materials. The CdSe-QD sensitized ZnOH-GO hybrid solar cells fabricated at 450 °C showing conversion of ∼10.60% under a tungsten lamp (12.1 mW/cm 2 ) are reported here, while using potassium iodide as an electrolyte. The output photocurrent, I (μA) with input power, P (mW/cm 2 ) is found to be superlinear, showing a relation of I = P n , where n = 1.4.

A plasma aerodynamic actuator supplied by a multilevel generator operating with different voltage waveforms

International Nuclear Information System (INIS)

Borghi, Carlo A; Cristofolini, Andrea; Grandi, Gabriele; Neretti, Gabriele; Seri, Paolo

2015-01-01

In this work a high voltage—high frequency generator for the power supply of a dielectric barrier discharge (DBD) plasma actuator for the aerodynamic control obtained by the electro-hydro-dynamic (EHD) interaction is described and tested. The generator can produce different voltage waveforms. The operating frequency is independent of the load characteristics and does not require impedance matching. The peak-to-peak voltage is 30 kV at a frequency up to 20 kHz and time variation rates up to 60 kV μs −1 . The performance of the actuator when supplied by several voltage waveforms is investigated. The tests have been performed in still air at atmospheric pressure. Voltage and current time behaviors have been measured. The evaluation of the energy delivered to the actuator allowed the estimation of the periods in which the plasma was ignited. Vibrational and rotational temperatures of the plasma have been estimated through spectroscopic acquisitions. The flow field induced in the region above the surface of the DBD actuator has been studied and the EHD conversion efficiency has been evaluated for the voltage waveforms investigated. The nearly sinusoidal multilevel voltage of the proposed generator and the sinusoidal voltage waveform of a conventional ac generator obtain comparable plasma features, EHD effects, and efficiencies. Inverse saw tooth waveform presents the highest effects and efficiency. The rectangular waveform generates suitable EHD effects but with the lowest efficiency. The voltage waveforms that induce plasmas with higher rotational temperatures are less efficient for the conversion of the electric into kinetic energy. (paper)

Low-Energy Real-Time OS Using Voltage Scheduling Algorithm for Variable Voltage Processors

OpenAIRE

Okuma, Takanori; Yasuura, Hiroto

2001-01-01

This paper presents a real-time OS based on $ mu $ITRON using proposed voltage scheduling algorithm for variable voltage processors which can vary supply voltage dynamically. The proposed voltage scheduling algorithms assign voltage level for each task dynamically in order to minimize energy consumption under timing constraints. Using the presented real-time OS, running tasks with low supply voltage leads to drastic energy reduction. In addition, the presented voltage scheduling algorithm is ...

Thermal instability and current-voltage scaling in superconducting fault current limiters

Energy Technology Data Exchange (ETDEWEB)

Zeimetz, B [Department of Materials Science and Metallurgy, Cambridge University, Pembroke Street, Cambridge CB1 3QZ (United Kingdom); Tadinada, K [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom); Eves, D E [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom); Coombs, T A [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom); Evetts, J E [Department of Materials Science and Metallurgy, Cambridge University, Pembroke Street, Cambridge CB1 3QZ (United Kingdom); Campbell, A M [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom)

2004-04-01

We have developed a computer model for the simulation of resistive superconducting fault current limiters in three dimensions. The program calculates the electromagnetic and thermal response of a superconductor to a time-dependent overload voltage, with different possible cooling conditions for the surfaces, and locally variable superconducting and thermal properties. We find that the cryogen boil-off parameters critically influence the stability of a limiter. The recovery time after a fault increases strongly with thickness. Above a critical thickness, the temperature is unstable even for a small applied AC voltage. The maximum voltage and maximum current during a short fault are correlated by a simple exponential law.

Novel high-voltage power lateral MOSFET with adaptive buried electrodes

International Nuclear Information System (INIS)

Zhang Wen-Tong; Wu Li-Juan; Qiao Ming; Luo Xiao-Rong; Zhang Bo; Li Zhao-Ji

2012-01-01

A new high-voltage and low-specific on-resistance (R on,sp ) adaptive buried electrode (ABE) silicon-on-insulator (SOI) power lateral MOSFET and its analytical model of the electric fields are proposed. The MOSFET features are that the electrodes are in the buried oxide (BOX) layer, the negative drain voltage V d is divided into many partial voltages and the output to the electrodes is in the buried oxide layer and the potentials on the electrodes change linearly from the drain to the source. Because the interface silicon layer potentials are lower than the neighboring electrode potentials, the electronic potential wells are formed above the electrode regions, and the hole potential wells are formed in the spacing of two neighbouring electrode regions. The interface hole concentration is much higher than the electron concentration through designing the buried layer electrode potentials. Based on the interface charge enhanced dielectric layer field theory, the electric field strength in the buried layer is enhanced. The vertical electric field E I and the breakdown voltage (BV) of ABE SOI are 545 V/μm and −587 V in the 50 μm long drift region and the 1 μm thick dielectric layer, and a low R on,sp is obtained. Furthermore, the structure also alleviates the self-heating effect (SHE). The analytical model matches the simulation results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Digital temperature meter

Energy Technology Data Exchange (ETDEWEB)

Glowacki, S

1982-01-01

Digital temperature meter for precise temperature measurements is presented. Its parts such as thermostat, voltage-frequency converter and digital frequency meter are described. Its technical parameters such as temperature range 50degC-700degC, measurement precision 1degC, measurement error +-1degC are given. (A.S.).

Programming Arduino to Control Bias Voltages to Temperature-Depedndent Gamma-ray Detectors aboard TRYAD Mission

Science.gov (United States)

Stevons, C. E.; Jenke, P.; Briggs, M. S.

2016-12-01

Terrestrial Gamma-ray Flashes (TGFs) are sub-millisecond gamma-ray flashes that are correlated with lightning have been observed with numerous satellites since their discovery in the early 1990s. Although substantial research has been conducted on TGFs, puzzling questions regarding their origin are still left unanswered. Consequently, the Terrestrial RaYs Analysis and Detection (TRYAD) mission is designed to solve many issues about TGFs by measuring the beam profile and orientation of TGFs in low Earth orbit. This project consists of sending two CubeSats into low-Earth orbit where they will independently sample TGF beams. Both of the TRYAD CubeSats will contain a gamma-ray detector composed of lead doped plastic scintillator coupled to silicon photomultiplier (SiPM) arrays. The gain readings of the SiPMs vary with temperature and the bias voltage must be corrected to compensate. Using an Arduino micro-controller, circuitry and software was developed to control the gain in response to the resistance of a thermistor. I will present the difficulties involved with this project along with our solutions.

The effect of applied control strategy on the current-voltage correlation of a solid oxide fuel cell stack during dynamic operation

Science.gov (United States)

Szmyd, Janusz S.; Komatsu, Yosuke; Brus, Grzegorz; Ghigliazza, Francesco; Kimijima, Shinji; Ściążko, Anna

2014-09-01

This paper discusses the transient characteristics of the planar type SOFC cell stack, of which the standard output is 300 W. The transient response of the voltage to the manipulation of an electric current was investigated. The effects of the response and of the operating condition determined by the operating temperature of the stack were studied by mapping a current-voltage (I-V) correlation. The current-based fuel control (CBFC) was adopted for keeping the fuel utilization factor at constant while the value of the electric current was ramped at the constant rate. The present experimental study shows that the transient characteristics of the cell voltage are determined by primarily the operating temperature caused by the manipulation of the current. Particularly, the slope of the I-V curve and the overshoot found on the voltage was remarkably influenced by the operating temperature. The different values of the fuel utilization factor influence the height of the settled voltages. The CBFC has significance in determining the slope of the I-V characteristic, but the different values ofthe fuel utilization factor does not affect the slope as the operating temperature does. The CBFC essentially does not alter the amplitude of the overshoot on the voltage response, since this is dominated by the operating temperature and its change is caused by manipulating the current.

The effect of applied control strategy on the current-voltage correlation of a solid oxide fuel cell stack during dynamic operation

Directory of Open Access Journals (Sweden)

Szmyd Janusz S.

2014-09-01

Full Text Available This paper discusses the transient characteristics of the planar type SOFC cell stack, of which the standard output is 300 W. The transient response of the voltage to the manipulation of an electric current was investigated. The effects of the response and of the operating condition determined by the operating temperature of the stack were studied by mapping a current-voltage (I-V correlation. The current-based fuel control (CBFC was adopted for keeping the fuel utilization factor at constant while the value of the electric current was ramped at the constant rate. The present experimental study shows that the transient characteristics of the cell voltage are determined by primarily the operating temperature caused by the manipulation of the current. Particularly, the slope of the I-V curve and the overshoot found on the voltage was remarkably influenced by the operating temperature. The different values of the fuel utilization factor influence the height of the settled voltages. The CBFC has significance in determining the slope of the I-V characteristic, but the different values ofthe fuel utilization factor does not affect the slope as the operating temperature does. The CBFC essentially does not alter the amplitude of the overshoot on the voltage response, since this is dominated by the operating temperature and its change is caused by manipulating the current.

Universal logic gates via liquid-electronic hybrid divider

KAUST Repository

Zhou, Bingpu

2012-01-01

We demonstrated two-input microdroplet-based universal logic gates using a liquid-electronic hybrid divider. All 16 Boolean logic functions have been realized by manipulating the applied voltages. The novel platform consists of a microfluidic chip with integrated microdroplet detectors and external electronic components. The microdroplet detectors act as the communication media for fluidic and electronic information exchange. The presence or absence of microdroplets at the detector translates into the binary signal 1 or 0. The embedded micro-mechanical pneumatically actuated valve (PAV), fabricated using the well-developed multilayer soft lithography technique, offers biocompatibility, flexibility and accuracy for the on-chip realization of different logic functions. The microfluidic chip can be scaled up to construct large-scale microfluidic logic computation. On the other hand, the microfluidic chip with a specific logic function can be applied to droplet-based chemical reactions for on-demand bio or chemical analysis. Our experimental results have presented an autonomously driven, precision-controlled microfluidic chip for chemical reactions based on the IF logic function. © 2012 The Royal Society of Chemistry.

Spectrum analysis of a voltage source converter due to semiconductor voltage drops

DEFF Research Database (Denmark)

Rasmussen, Tonny Wederberg; Eltouki, Mustafa

2017-01-01

It is known that power electronic voltage source converters are non-ideal. This paper presents a state-of-the-art review on the effect of semiconductor voltage drop on the output voltage spectrum, using single-phase H-bridge two-level converter topology with natural sampled pulse width modulation....... The paper describes the analysis of output voltage spectrum, when the semiconductor voltage drop is added. The results of the analysis of the spectral contribution including and excluding semiconductor voltage drop reveal a good agreement between the theoretical results, simulations and laboratory...

Development of a Compensation Scheme for a Measurement Voltage Transformer Using the Hysteresis Characteristics of a Core

Directory of Open Access Journals (Sweden)

Hyewon Lee

2015-04-01

Full Text Available This paper describes the design, evaluation, and implementation of a compensation scheme for a measurement voltage transformer (VT using the hysteresis characteristics of the core. The error of a VT is caused by the primary winding voltage and secondary winding voltage. The latter depends on the secondary current, whereas the former depends on the primary current, which is an aggregate of the exciting and secondary currents. The secondary current is obtained directly from the secondary voltage and is used to obtain the voltage across the secondary winding. For the primary current, the exciting current is decomposed into two components: core-loss and magnetizing currents. The magnetizing current is obtained by the flux-magnetizing current curve instead of the hysteresis loop to minimize the required loops for compensation. The core-loss current is obtained by dividing the primary induced voltage by the core-loss resistance. Finally, the estimated voltages across the primary and secondary windings are added to the measured secondary voltage for compensation. The scheme can significantly improve the accuracy of a VT. The results of the performance of compensator are shown in the experimental test. The accuracy of the measurement VT improves from 1.0C class to 0.1C class. The scheme can help to significantly reduce the required core cross section of a measurement VT in an electrical energy system.

Description of the universal low-temperature measuring system

International Nuclear Information System (INIS)

Langfeld, R.; Maurer, C.

1987-01-01

There are various measuring methods for a characterization of semiconductor devices, especially for analysis of radiation effects after ion implantation. The four most important methods are: 1. Recording of voltage-current characteristics at pn-junctions or Schottky diodes. 2. Determination of the temperature dependence of the electrical resistance, e.g. of amorphous semiconductor layers, by feeding a constant voltage and measuring the current as a function of sample temperature. 3. Measurement of the resistive layer capacitance of a semiconductor diode as a function of the fed blocking voltage and determination of the doping concentration profile. 4. Time-resolved capacitance measurement after abrupt blocking-voltage alterations at pn - or Schottky diodes as a function of specimen temperature for determining defects in semiconductors, DLTS method. A measuring equipment has been set up that allows measurements being made in the temperature range between 14 K and 400 K, on up to eight specimens in one temperature test. Operating mode and handling of the computerized measuring program are described. (orig./HP) [de

Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 Films

Directory of Open Access Journals (Sweden)

Jian-Yang Lin

2014-01-01

Full Text Available SiO2 or Cu-doped SiO2 (Cu:SiO2 insulating films combined with Cu or W upper electrodes were constructed on the W/Si substrates to form the conductive-bridging RAM (CB-RAM cells. The CB-RAMs were then subjected to a constant-voltage stressing (CVS at room temperature. The experimental results show that the room-temperature CVS treatment can effectively affect the current conduction behavior and stabilize the resistive switching of the memory cells. After the CVS, the current conduction mechanisms in the high resistance state during the set process of the Cu/Cu:SiO2/W cell can be changed from Ohm’s law and the space charge limited conduction to Ohm’s law, the Schottky emission, and the space charge limited conduction. Presumably, it is due to the breakage of the conduction filaments during the CVS treatment that the conduction electrons cannot go back to the back electrode smoothly.

Non-equilibrium scaling analysis of the Kondo model with voltage bias

International Nuclear Information System (INIS)

Fritsch, Peter; Kehrein, Stefan

2009-01-01

The quintessential description of Kondo physics in equilibrium is obtained within a scaling picture that shows the buildup of Kondo screening at low temperature. For the non-equilibrium Kondo model with a voltage bias, the key new feature are decoherence effects due to the current across the impurity. In the present paper, we show how one can develop a consistent framework for studying the non-equilibrium Kondo model within a scaling picture of infinitesimal unitary transformations (flow equations). Decoherence effects appear naturally in third order of the β-function and dominate the Hamiltonian flow for sufficiently large voltage bias. We work out the spin dynamics in non-equilibrium and compare it with finite temperature equilibrium results. In particular, we report on the behavior of the static spin susceptibility including leading logarithmic corrections and compare it with the celebrated equilibrium result as a function of temperature.

Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current–voltage measurements

Energy Technology Data Exchange (ETDEWEB)

Venter, A., E-mail: andre.venter@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Murape, D.M.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Auret, F.D. [Department of Physics, University of the Pretoria, Lynnwood Road, Pretoria 0002 (South Africa)

2015-01-01

The temperature dependent transport characteristics of Pd/n-GaSb:Te Schottky contacts with low and saturating reverse current are investigated by means of current–voltage measurements between 80 K and 320 K. The apparent barrier height and ideality factor increase with a decrease in temperature. Neither thermionic nor thermionic field emission can explain the low temperature characteristics of these diodes. Instead, evidence is presented for barrier inhomogeneity across the metal/semiconductor contact. A plot of the barrier height, ϕ{sub b} vs. 1/2kT revealed a double Gaussian distribution for the barrier height with ϕ{sub b,mean} assuming values of 0.59 eV ± 0.07 (80–140 K) and 0.25 eV ± 0.12 (140–320 K) respectively. - Highlights: • Transport characteristics of Pd/epitaxial n-GaSb:Te SBDs are studied by means of I-V-T measurements. • SBDs have remarkably low and saturating reverse current – of the lowest ever reported for GaSb. • Transport behaviour is explained by considering electronic states present on the GaSb surface. • Evidence is presented for barrier inhomogeneity across the metal-semiconductor contact.

Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current–voltage measurements

International Nuclear Information System (INIS)

Venter, A.; Murape, D.M.; Botha, J.R.; Auret, F.D.

2015-01-01

The temperature dependent transport characteristics of Pd/n-GaSb:Te Schottky contacts with low and saturating reverse current are investigated by means of current–voltage measurements between 80 K and 320 K. The apparent barrier height and ideality factor increase with a decrease in temperature. Neither thermionic nor thermionic field emission can explain the low temperature characteristics of these diodes. Instead, evidence is presented for barrier inhomogeneity across the metal/semiconductor contact. A plot of the barrier height, ϕ b vs. 1/2kT revealed a double Gaussian distribution for the barrier height with ϕ b,mean assuming values of 0.59 eV ± 0.07 (80–140 K) and 0.25 eV ± 0.12 (140–320 K) respectively. - Highlights: • Transport characteristics of Pd/epitaxial n-GaSb:Te SBDs are studied by means of I-V-T measurements. • SBDs have remarkably low and saturating reverse current – of the lowest ever reported for GaSb. • Transport behaviour is explained by considering electronic states present on the GaSb surface. • Evidence is presented for barrier inhomogeneity across the metal-semiconductor contact

Investigation of Efficiency and Thermal Performance of The Y-source Converters for a Wide Voltage Range

Directory of Open Access Journals (Sweden)

Brwene Salah Gadalla

2015-12-01

Full Text Available The Y-source topology has a unique advantage of having high voltages gain with small shoot through duty cycles. Furthermore, having the advantage of high modulation index which increase the power density and improve the performance of the converter. In this paper, a collective thermal and efficiency investigation has been performed in order to improve the reliability of the converter. Evaluation of relevant losses as ( switching, conduction, capacitor ESR, core and winding losses , and evaluation of the junction temperature of the devices under 25C ambient temperature. The analysis is done for different voltage gain factors (2, 3, and 4, and different winding factor (4, and 5 using PLECS toolbox. The results shows that the higher the voltage gain and winding factor, the higher power losses and rising in the junction temperature of the device.

Gigantic transverse voltage induced via off-diagonal thermoelectric effect in CaxCoO2 thin films

Science.gov (United States)

Takahashi, Kouhei; Kanno, Tsutomu; Sakai, Akihiro; Adachi, Hideaki; Yamada, Yuka

2010-07-01

Gigantic transverse voltages exceeding several tens volt have been observed in CaxCoO2 thin films with tilted c-axis orientation upon illumination of nanosecond laser pulses. The voltage signals were highly anisotropic within the film surface showing close relation with the c-axis tilt direction. The magnitude and the decay time of the voltage strongly depended on the film thickness. These results confirm that the large laser-induced voltage originates from a phenomenon termed the off-diagonal thermoelectric effect, by which a film out-of-plane temperature gradient leads to generation of a film in-plane voltage.

Coherent Voltage Oscillations in Superconducting Polycrystalline Y1Ba2Cu3O7-x

International Nuclear Information System (INIS)

Altinkok, A; Yetis, H; Olutas, M; Kilic, K; Kilic, A; Cetin, O

2006-01-01

We have investigated the voltage response of superconducting polycrystalline bulk Y 1 Ba 2 Cu 3 O 7-x (YBCO) material to a bidirectional square wave current with long periods and dc current by means of the evolution of the voltage-time (V-t) curves near the critical temperature. In a well-defined range of amplitudes and periods of driving current, and temperatures, it was observed that a non-linear response to bidirectional square wave current rides on a time independent background voltage value and manifests itself as regular sinusoidal-like voltage oscillations. It was found that the non-linear response disappears when the bidirectional current was switched to dc current. The spectral content of the voltage oscillations analyzed by the Fast Fourier Transform of the corresponding V-t curves revealed that the fundamental harmonics is comparable to the frequency of bidirectional square wave current. The coherent voltage oscillations were discussed mainly in terms of the dynamic competition between pinning and depinning together with the disorder in the coupling strength between the superconducting grains (i.e Josephson coupling effects). The density fluctuations and semi-elastic coupling of the flux lines with the pinning centers were also considered as possible physical mechanisms in the interpretation of the experimental results

High-voltage transistor converter for pulsed x-ray sources

International Nuclear Information System (INIS)

Krasil'nikov, S.B.; Kristalinskii, A.L.; Lozovoi, L.N.; Markov, S.N.; Sindalovskii, E.I.

1986-01-01

A 24-V/12-kV converter for MIRA-2D and NORA pulsed x-ray sources is described. When the low-voltage supply varies within 20-26 V, the frequency stability of the x-ray pulses is higher by a factor of 3 ≅ 3 than when the PRIMA converter is used. For 14-24 V, the average output power of the converter is independent of the load impedance and increases linearly with an increase in supply voltage. The efficiency of the converter reaches 60%. The converter operates in the temperature range of -40 to +60 0 C

Application of transducers to the control of temperatures and of alternating and direct voltages (1962); Application des transducteurs a la regulation des temperatures et des tensions alternatives et continues (1962)

Energy Technology Data Exchange (ETDEWEB)

Raoult, N [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1960-11-15

The temperature regulator and the voltage regulators described have been studied with a view to conferring a high degree of safety to the apparatuses in which they are used. They make use almost exclusively of Transducers which are passive elements acting mainly in these apparatuses as amplifiers and which are entirely satisfactory, ensuring that the regulators studied keep their essential qualities i.e accuracy, reliability, stability and sensitivity. (author) [French] Le regulateur de temperature et les regulateurs de tension decrits ont ete etudies pour donner aux ensembles dans lesquels ils sont inseres une grande securite d'exploitation. Ils utilisent presque exclusivement comme constituants des TRANSDUCTEURS qui sont des elements passifs assurant principalement dans ces appareils une fonction d'amplification ou ils donnent entiere satisfaction en conservant aux regulateurs etudies leurs qualites essentielles qui sont: la precision, la fidelite, la stabilite et la sensibilite. (auteur)

Moderately nonlinear diffuse-charge dynamics under an ac voltage.

Science.gov (United States)

Stout, Robert F; Khair, Aditya S

2015-09-01

The response of a symmetric binary electrolyte between two parallel, blocking electrodes to a moderate amplitude ac voltage is quantified. The diffuse charge dynamics are modeled via the Poisson-Nernst-Planck equations for a dilute solution of point-like ions. The solution to these equations is expressed as a Fourier series with a voltage perturbation expansion for arbitrary Debye layer thickness and ac frequency. Here, the perturbation expansion in voltage proceeds in powers of V_{o}/(k_{B}T/e), where V_{o} is the amplitude of the driving voltage and k_{B}T/e is the thermal voltage with k_{B} as Boltzmann's constant, T as the temperature, and e as the fundamental charge. We show that the response of the electrolyte remains essentially linear in voltage amplitude at frequencies greater than the RC frequency of Debye layer charging, D/λ_{D}L, where D is the ion diffusivity, λ_{D} is the Debye layer thickness, and L is half the cell width. In contrast, nonlinear response is predicted at frequencies below the RC frequency. We find that the ion densities exhibit symmetric deviations from the (uniform) equilibrium density at even orders of the voltage amplitude. This leads to the voltage dependence of the current in the external circuit arising from the odd orders of voltage. For instance, the first nonlinear contribution to the current is O(V_{o}^{3}) which contains the expected third harmonic but also a component oscillating at the applied frequency. We use this to compute a generalized impedance for moderate voltages, the first nonlinear contribution to which is quadratic in V_{o}. This contribution predicts a decrease in the imaginary part of the impedance at low frequency, which is due to the increase in Debye layer capacitance with increasing V_{o}. In contrast, the real part of the impedance increases at low frequency, due to adsorption of neutral salt from the bulk to the Debye layer.

Moderately nonlinear diffuse-charge dynamics under an ac voltage

Science.gov (United States)

Stout, Robert F.; Khair, Aditya S.

2015-09-01

The response of a symmetric binary electrolyte between two parallel, blocking electrodes to a moderate amplitude ac voltage is quantified. The diffuse charge dynamics are modeled via the Poisson-Nernst-Planck equations for a dilute solution of point-like ions. The solution to these equations is expressed as a Fourier series with a voltage perturbation expansion for arbitrary Debye layer thickness and ac frequency. Here, the perturbation expansion in voltage proceeds in powers of Vo/(kBT /e ) , where Vo is the amplitude of the driving voltage and kBT /e is the thermal voltage with kB as Boltzmann's constant, T as the temperature, and e as the fundamental charge. We show that the response of the electrolyte remains essentially linear in voltage amplitude at frequencies greater than the RC frequency of Debye layer charging, D /λDL , where D is the ion diffusivity, λD is the Debye layer thickness, and L is half the cell width. In contrast, nonlinear response is predicted at frequencies below the RC frequency. We find that the ion densities exhibit symmetric deviations from the (uniform) equilibrium density at even orders of the voltage amplitude. This leads to the voltage dependence of the current in the external circuit arising from the odd orders of voltage. For instance, the first nonlinear contribution to the current is O (Vo3) which contains the expected third harmonic but also a component oscillating at the applied frequency. We use this to compute a generalized impedance for moderate voltages, the first nonlinear contribution to which is quadratic in Vo. This contribution predicts a decrease in the imaginary part of the impedance at low frequency, which is due to the increase in Debye layer capacitance with increasing Vo. In contrast, the real part of the impedance increases at low frequency, due to adsorption of neutral salt from the bulk to the Debye layer.

The irradiance and temperature dependent mathematical model for estimation of photovoltaic panel performances

International Nuclear Information System (INIS)

Barukčić, M.; Ćorluka, V.; Miklošević, K.

2015-01-01

Highlights: • The temperature and irradiance dependent model for the I–V curve estimation is presented. • The purely mathematical model based on the analysis of the I–V curve shape is presented. • The model includes the Gompertz function with temperature and irradiance dependent parameters. • The input data are extracted from the data sheet I–V curves. - Abstract: The temperature and irradiance dependent mathematical model for photovoltaic panel performances estimation is proposed in the paper. The base of the model is the mathematical function of the photovoltaic panel current–voltage curve. The model of the current–voltage curve is based on the sigmoid function with temperature and irradiance dependent parameters. The temperature and irradiance dependencies of the parameters are proposed in the form of analytic functions. The constant parameters are involved in the analytical functions. The constant parameters need to be estimated to get the temperature and irradiance dependent current–voltage curve. The mathematical model contains 12 constant parameters and they are estimated by using the evolutionary algorithm. The optimization problem is defined for this purpose. The optimization problem objective function is based on estimated and extracted (measured) current and voltage values. The current and voltage values are extracted from current–voltage curves given in datasheet of the photovoltaic panels. The new procedure for estimation of open circuit voltage value at any temperature and irradiance is proposed in the model. The performance of the proposed mathematical model is presented for three different photovoltaic panel technologies. The simulation results indicate that the proposed mathematical model is acceptable for estimation of temperature and irradiance dependent current–voltage curve and photovoltaic panel performances within temperature and irradiance ranges

Threshold voltage roll-off modelling of bilayer graphene field-effect transistors

International Nuclear Information System (INIS)

Saeidmanesh, M; Ismail, Razali; Khaledian, M; Karimi, H; Akbari, E

2013-01-01

An analytical model is presented for threshold voltage roll-off of double gate bilayer graphene field-effect transistors. To this end, threshold voltage models of short- and long-channel states have been developed. In the short-channel case, front and back gate potential distributions have been modelled and used. In addition, the tunnelling probability is modelled and its effect is taken into consideration in the potential distribution model. To evaluate the accuracy of the potential model, FlexPDE software is employed with proper boundary conditions and a good agreement is observed. Using the proposed models, the effect of several structural parameters on the threshold voltage and its roll-off are studied at room temperature. (paper)

Multifunction Voltage-Mode Filter Using Single Voltage Differencing Differential Difference Amplifier

Directory of Open Access Journals (Sweden)

Chaichana Amornchai

2017-01-01

Full Text Available In this paper, a voltage mode multifunction filter based on single voltage differencing differential difference amplifier (VDDDA is presented. The proposed filter with three input voltages and single output voltage is constructed with single VDDDA, two capacitors and two resistors. Its quality factor can be adjusted without affecting natural frequency. Also, the natural frequency can be electronically tuned via adjusting of bias current. The filter can offer five output responses, high-pas (HP, band-pass (BP, band-reject (BR, low-pass (LP and all-ass (AP functions in the same circuit topology. The output response can be selected by choosing the suitable input voltage without the component matching condition and the requirement of additional double gain voltage amplifier. PSpice simulation results to confirm an operation of the proposed filter correspond to the theory.

A voltage regulator system with dynamic bandwidth boosting for passive UHF RFID transponders

International Nuclear Information System (INIS)

Shen Jinpeng; Wang Xin'an; Liu Shan; Li Shoucheng; Ruan Zhengkun

2013-01-01

This paper presents a voltage regulator system for passive UHF RFID transponders, which contains a rectifier, a limiter, and a regulator. The rectifier achieves power by rectifying the incoming RF energy. Due to the huge variation of the rectified voltage, a limiter at the rectifier output is used to clamp the rectified voltage. In this paper, the design of a limiter circuit is discussed in detail, which can provide a stable limiting voltage with low sensitivity to temperature variation and process dispersion. The key aspect of the voltage regulator system is the dynamic bandwidth boosting in the regulator. By sensing the excess current that is bypassed in the limiter during periods of excess energy, the bias current as well as the bandwidth of the regulator are increased, the output supply voltage can recover quickly from line transients during the periods of no RF energy to a full blast of RF energy. This voltage regulator system is implemented in a 0.18 μm CMOS process. (semiconductor integrated circuits)

Temporary over voltages in the high voltage networks

International Nuclear Information System (INIS)

Vukelja, Petar; Naumov, Radomir; Mrvic, Jovan; Minovski, Risto

2001-01-01

The paper treats the temporary over voltages that may arise in the high voltage networks as a result of: ground faults, loss of load, loss of one or two phases and switching operation. Based on the analysis, the measures for their limitation are proposed. (Original)

Divider plate leak inspections using an acoustic tool 'ALIS'

International Nuclear Information System (INIS)

Kowalewski, J.; Colbert, M.

1998-01-01

Divider plate leakage in the primary head of steam generators may be a contributor to high Reactor Inlet Header Temperature (RIHT) which can have a negative effect on the operation of a plant. A method to provide quick information of divider plate leakage can be very useful in helping operators to make timely and cost effective repair and maintenance decisions. As part of a CANDU Owners Group (COG) funded program, a novel acoustic tool for performing inspections in empty steam generators during a shutdown has been developed and successfully demonstrated by Ontario Hydro Technologies (OHT). The basic principle of this technique utilizes sound transmission through the leakage paths of a divider plate assembly for creating a graphic image which reveals the locations and relative sizes of leaks. This is accomplished by injecting one side of the primary head with a series of airborne, ultrasonic sound bursts while scanning the divider plates from the opposite side and collecting transmitted sound pressure levels. Once a scan is completed the results are processed and displayed graphically as a color mapping of the entire divider plate assembly showing an image of the leakage locations and relative severity. The special transducers of the acoustic leak inspection system (ALIS) are installed through the manways of the steam generator at both sides of the primary head. These are clamped to the tube sheet and operated from a convenient remote location within the containment building. This process minimizes radiation exposure of the workers, as well, it reduces risk of contamination of the ALIS equipment. The current version of this tool performs the scans by remote manual control. (author)

Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

Science.gov (United States)

Blaho, M.; Gregušová, D.; Haščík, Š.; Ťapajna, M.; Fröhlich, K.; Šatka, A.; Kuzmík, J.

2017-07-01

Threshold voltage instabilities are examined in self-aligned E/D-mode n++ GaN/InAlN/GaN MOS HEMTs with a gate length of 2 μm and a source-drain spacing of 10 μm integrated in a logic invertor. The E-mode MOS HEMT technology is based on selective dry etching of the cap layer which is combined with Al2O3 grown by atomic-layer deposition at 380 K. In the D-mode MOS HEMT, the gate recessing is skipped. The nominal threshold voltage (VT) of E/D-mode MOS HEMTs was 0.6 and -3.4 V, respectively; the technology invariant maximal drain current was about 0.45 A/mm. Analysis after 580 K/15 min annealing step and at an elevated temperature up to 430 K reveals opposite device behavior depending on the HEMT operational mode. It was found that the annealing step decreases VT of the D-mode HEMT due to a reduced electron injection into the modified oxide. On the other hand, VT of the E-mode HEMT increases with reduced density of surface donors at the oxide/InAlN interface. Operation at the elevated temperature produces reversible changes: increase/decrease in the VT of the respective D-/E-mode HEMTs. Additional bias-induced experiments exhibit complex trapping phenomena in the devices: Coaction of shallow (˜0.1 eV below EC) traps in the GaN buffer and deep levels at the oxide/InAlN interface was identified for the E-mode device, while trapping in the D-mode HEMTs was found to be consistent with a thermo-ionic injection of electrons into bulk oxide traps (˜0.14 eV above EF) and trapping at the oxide/GaN cap interface states.

Voltage current characteristics of type III superconductors

Science.gov (United States)

Dorofejev, G. L.; Imenitov, A. B.; Klimenko, E. Yu.

1980-06-01

An adequate description of voltage-current characteristics is important in order to understand the nature of high critical current for the electrodynamic construction of type-III superconductors and for commercial superconductor specification. Homogenious monofilament and multifilament Nb-Ti, Nb-Zr, Nb 3Sn wires were investigated in different ranges of magnetic field, temperature and current. The longitudinal electric field for homogenious wires may be described by E=J ρnexp- T c/T 0+ T/T 0+ B/B 0+ J/J 0, where To, Bo, Jo are the increasing parameters, which depend weakly on B and T, of the electric field. The shape of the voltage-current characteristics of multifilament wires, and the parameter's dependence on temperature and magnetic field may be explained qualitatively by the longitudinal heterogeneous nature of the filaments. A method of attaining the complete specification of the wire's electro-physical properties is proposed. It includes the traditional description of a critical surface (ie the surface corresponding to a certain conventional effective resistivity in T, B, J - space) and a description of any increasing parameter that depends on B and T.

Design of high voltage power supply of miniature X-ray tube based on resonant Royer

International Nuclear Information System (INIS)

Liu Xiyao; Zeng Guoqiang; Tan Chengjun; Luo Qun; Gong Chunhui; Huang Rui

2013-01-01

Background: In recent years, X rays are widely used in various fields. With the rapid development of national economy, the demand of high quality, high reliability, and high stability miniature X-ray tube has grown rapidly. As an important core component of miniature X-ray tube, high voltage power supply has attracted wide attention. Purpose: To match miniature, the high voltage power supply should be small, lightweight, good quality, etc. Based on the basic performance requirements of existing micro-X-ray tube high voltage power supply, this paper designs an output from 0 to -30 kV adjustable miniature X-ray tube voltage DC power supply. Compared to half-bridge and full-bridge switching-mode power supply, its driving circuit is simple. With working on the linear condition, it has no switching noise. Methods: The main circuit makes use of DC power supply to provide the energy. The resonant Royer circuit supplies sine wave which drives to the high frequency transformer's primary winding with resultant sine-like high voltage appearing across the secondary winding. Then, the voltage doubling rectifying circuit would achieve further boost. In the regulator circuit, a feedback control resonant transistor base current is adopted. In order to insulate air, a silicone rubber is used for high pressure part packaging, and the output voltage is measured by the dividing voltage below -5 kV. Results: The stability of circuit is better than 0.2%/6 h and the percent of the output ripple voltage is less than 0.3%. Keeping the output voltage constant, the output current can reach 57 μA by changing the size of load resistor. This high voltage power supply based on resonant Royer can meet the requirement of miniature X-ray tube. Conclusions: The circuit can satisfy low noise, low ripple, low power and high voltage regulator power supply design. However, its efficiency is not high enough because of the linear condition. In the next design, to further reduce power consumption, we

Prediction of breakdown voltages in novel gases for high voltage insulation

International Nuclear Information System (INIS)

Koch, M.

2015-01-01

This thesis submitted to the Swiss Federal Institute of Technology ETH in Zurich examines the use of sulphur hexafluoride (SF_6) and similar gases as important insulation media for high voltage equipment. Due to its superior insulation properties, SF_6 is widely used in gas-insulated switchgear. However, the gas also has a very high global warming potential and the content of SF_6 in the atmosphere is constantly increasing. The search for new insulation gases using classical breakdown experiments is discussed. A model for SF_6 based on the stepped leader model is described. This calculates the breakdown voltages in arbitrary electrode configurations and under standard voltage waveforms. Thus, the thesis provides a method for the prediction of breakdown voltages of arbitrary field configurations under standard voltage waveforms for gases with electron-attaching properties. With this, further gases can be characterized for usage as high voltage insulation media

Current–voltage characteristics of manganite–titanite perovskite junctions

Directory of Open Access Journals (Sweden)

Benedikt Ifland

2015-07-01

Full Text Available After a general introduction into the Shockley theory of current voltage (J–V characteristics of inorganic and organic semiconductor junctions of different bandwidth, we apply the Shockley theory-based, one diode model to a new type of perovskite junctions with polaronic charge carriers. In particular, we studied manganite–titanate p–n heterojunctions made of n-doped SrTi1−yNbyO3, y = 0.002 and p-doped Pr1−xCaxMnO3, x = 0.34 having a strongly correlated electron system. The diffusion length of the polaron carriers was analyzed by electron beam-induced current (EBIC in a thin cross plane lamella of the junction. In the J–V characteristics, the polaronic nature of the charge carriers is exhibited mainly by the temperature dependence of the microscopic parameters, such as the hopping mobility of the series resistance and a colossal electro-resistance (CER effect in the parallel resistance. We conclude that a modification of the Shockley equation incorporating voltage-dependent microscopic polaron parameters is required. Specifically, the voltage dependence of the reverse saturation current density is analyzed and interpreted as a voltage-dependent electron–polaron hole–polaron pair generation and separation at the interface.

Leakage Current Induced by Energetic Disorder in Organic Bulk Heterojunction Solar Cells: Comprehending the Ultrahigh Loss of Open-Circuit Voltage at Low Temperatures

Science.gov (United States)

Yang, Wenchao; Luo, Yongsong; Guo, Pengfei; Sun, Haibin; Yao, Yao

2017-04-01

The open-circuit voltage (Voc ) of organic solar cells generally approaches its maximum obtainable values as the temperature decreases. However, recent experiments have revealed that the Voc may suffer from an ultrahigh loss at low temperatures. In order to verify this explanation and investigate the impacts of energetic disorder on the temperature-dependent behaviors of the Voc in general, we calculate the Voc-T plots with the drift-diffusion method under various device working parameters. With the disorder being incorporated into the device model by considering the disorder-suppressed (temperature-dependent) charge-carrier mobilities, it is found that the ultrahigh Voc losses cannot be reproduced under the Onsager-Braun-type charge generation rate. With the charge generation rate being constant or weakly dependent on temperature, for nonselective contacts, the Voc reduces drastically at low temperatures, while for selective contacts, the Voc increases monotonically with decreasing temperature. With higher carrier mobilities or smaller device thicknesses, the ultrahigh loss occurs at lower temperatures. The mechanism is that, since the disorder-suppressed charge mobilities give rise to both low charge-extraction efficiency and small bimolecular recombination rate, plenty of charge carriers can be extracted from the wrong electrode and can form a large leakage current, which counteracts the majority-carrier current and reduces the Voc at low temperatures. Our results thus highlight the essential role of charge-carrier kinetics, except for the charge-filling effect, on dominating the disorder-induced Voc losses.

On-site voltage measurement with capacitive sensors on high voltage systems

NARCIS (Netherlands)

Wu, L.; Wouters, P.A.A.F.; Heesch, van E.J.M.; Steennis, E.F.

2011-01-01

In Extra/High-Voltage (EHV/HV) power systems, over-voltages occur e.g. due to transients or resonances. At places where no conventional voltage measurement devices can be installed, on-site measurement of these occurrences requires preferably non intrusive sensors, which can be installed with little

An AMOLED AC-Biased Pixel Design Compensating the Threshold Voltage and I-R Drop

Directory of Open Access Journals (Sweden)

Ching-Lin Fan

2011-01-01

Full Text Available We propose a novel pixel design and an AC bias driving method for active-matrix organic light-emitting diode (AM-OLED displays using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs. The proposed threshold voltage and I-R drop compensation circuit, which comprised three transistors and one capacitor, have been verified to supply uniform output current by simulation work using the Automatic Integrated Circuit Modeling Simulation Program with Integrated Circuit Emphasis (AIM-SPICE simulator. The simulated results demonstrate excellent properties such as low error rate of OLED anode voltage variation (<0.7% and low voltage drop of VDD power line. The proposed pixel circuit effectively enables threshold-voltage-deviation correction of driving TFT and compensates for the voltage drop of VDD power line using AC bias on OLED cathode.

Prediction of breakdown voltages in novel gases for high voltage insulation

Energy Technology Data Exchange (ETDEWEB)

Koch, M.

2015-07-01

This thesis submitted to the Swiss Federal Institute of Technology ETH in Zurich examines the use of sulphur hexafluoride (SF{sub 6}) and similar gases as important insulation media for high voltage equipment. Due to its superior insulation properties, SF{sub 6} is widely used in gas-insulated switchgear. However, the gas also has a very high global warming potential and the content of SF{sub 6} in the atmosphere is constantly increasing. The search for new insulation gases using classical breakdown experiments is discussed. A model for SF{sub 6} based on the stepped leader model is described. This calculates the breakdown voltages in arbitrary electrode configurations and under standard voltage waveforms. Thus, the thesis provides a method for the prediction of breakdown voltages of arbitrary field configurations under standard voltage waveforms for gases with electron-attaching properties. With this, further gases can be characterized for usage as high voltage insulation media.

High voltage engineering

CERN Document Server

Rizk, Farouk AM

2014-01-01

Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

Device for monitoring cell voltage

Science.gov (United States)

Doepke, Matthias [Garbsen, DE; Eisermann, Henning [Edermissen, DE

2012-08-21

A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

An Enhanced Three-Level Voltage Switching State Scheme for Direct Torque Controlled Open End Winding Induction Motor

Science.gov (United States)

Kunisetti, V. Praveen Kumar; Thippiripati, Vinay Kumar

2018-01-01

Open End Winding Induction Motors (OEWIM) are popular for electric vehicles, ship propulsion applications due to less DC link voltage. Electric vehicles, ship propulsions require ripple free torque. In this article, an enhanced three-level voltage switching state scheme for direct torque controlled OEWIM drive is implemented to reduce torque and flux ripples. The limitations of conventional Direct Torque Control (DTC) are: possible problems during low speeds and starting, it operates with variable switching frequency due to hysteresis controllers and produces higher torque and flux ripple. The proposed DTC scheme can abate the problems of conventional DTC with an enhanced voltage switching state scheme. The three-level inversion was obtained by operating inverters with equal DC-link voltages and it produces 18 voltage space vectors. These 18 vectors are divided into low and high frequencies of operation based on rotor speed. The hardware results prove the validity of proposed DTC scheme during steady-state and transients. From simulation and experimental results, proposed DTC scheme gives less torque and flux ripples on comparison to two-level DTC. The proposed DTC is implemented using dSPACE DS-1104 control board interface with MATLAB/SIMULINK-RTI model.

Quantum phase slips and voltage fluctuations in superconducting nanowires

Energy Technology Data Exchange (ETDEWEB)

Semenov, Andrew G. [I.E. Tamm Department of Theoretical Physics, P.N. Lebedev Physics Institute, Moscow (Russian Federation); National Research University Higher School of Economics, Moscow (Russian Federation); Zaikin, Andrei D. [I.E. Tamm Department of Theoretical Physics, P.N. Lebedev Physics Institute, Moscow (Russian Federation); Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Karlsruhe (Germany)

2017-06-15

We argue that quantum phase slips (QPS) may generate non-equilibrium voltage fluctuations in superconducting nanowires. In the low frequency limit we evaluate all cumulants of the voltage operator which obey Poisson statistics and show a power law dependence on the external bias. We specifically address quantum shot noise which power spectrum S{sub Ω} may depend non-monotonously on temperature. In the long wire limit S{sub Ω} decreases with increasing frequency Ω and vanishes beyond a threshold value of Ω at T → 0. Our predictions can be directly tested in future experiments with superconducting nanowires. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Voltage stability in low voltage microgrids in aspects of active and reactive power demand

Directory of Open Access Journals (Sweden)

Parol Mirosław

2016-03-01

Full Text Available Low voltage microgrids are autonomous subsystems, in which generation, storage and power and electrical energy consumption appear. In the paper the main attention has been paid to the voltage stability issue in low voltage microgrid for different variants of its operation. In the introduction a notion of microgrid has been presented, and also the issue of influence of active and reactive power balance on node voltage level has been described. Then description of voltage stability issue has been presented. The conditions of voltage stability and indicators used to determine voltage stability margin in the microgrid have been described. Description of the low voltage test microgrid, as well as research methodology along with definition of considered variants of its operation have been presented further. The results of exemplary calculations carried out for the daily changes in node load of the active and reactive power, i.e. the voltage and the voltage stability margin indexes in nodes have been presented. Furthermore, the changes of voltage stability margin indexes depending on the variant of the microgrid operation have been presented. Summary and formulation of conclusions related to the issue of voltage stability in microgrids have been included at the end of the paper.

Impurity effects on electrical conductivity of doped bilayer graphene in the presence of a bias voltage

International Nuclear Information System (INIS)

Lotfi, E; Rezania, H; Arghavaninia, B; Yarmohammadi, M

2016-01-01

We address the electrical conductivity of bilayer graphene as a function of temperature, impurity concentration, and scattering strength in the presence of a finite bias voltage at finite doping, beginning with a description of the tight-binding model using the linear response theory and Green’s function approach. Our results show a linear behavior at high doping for the case of high bias voltage. The effects of electron doping on the electrical conductivity have been studied via changing the electronic chemical potential. We also discuss and analyze how the bias voltage affects the temperature behavior of the electrical conductivity. Finally, we study the behavior of the electrical conductivity as a function of the impurity concentration and scattering strength for different bias voltages and chemical potentials respectively. The electrical conductivity is found to be monotonically decreasing with impurity scattering strength due to the increased scattering among electrons at higher impurity scattering strength. (paper)

Electronic Current Transducer (ECT) for high voltage dc lines

Science.gov (United States)

Houston, J. M.; Peters, P. H., Jr.; Summerayes, H. R., Jr.; Carlson, G. J.; Itani, A. M.

1980-02-01

The development of a bipolar electronic current transducer (ECT) for measuring the current in a high voltage dc (HVDC) power line at line potential is discussed. The design and construction of a free standing ECT for use on a 400 kV line having a nominal line current of 2000 A is described. Line current is measured by a 0.0001 ohm shunt whose voltage output is sampled by a 14 bit digital data link. The high voltage interface between line and ground is traversed by optical fibers which carry digital light signals as far as 300 m to a control room where the digital signal is converted back to an analog representation of the shunt voltage. Two redundant electronic and optical data links are used in the prototype. Power to operate digital and optical electronics and temperature controlling heaters at the line is supplied by a resistively and capacitively graded 10 stage cascade of ferrite core transformers located inside the hollow, SF6 filled, porcelain support insulator. The cascade is driven by a silicon controlled rectifier inverter which supplies about 100 W of power at 30 kHz.

76 FR 70721 - Voltage Coordination on High Voltage Grids; Notice of Staff Workshop

Science.gov (United States)

2011-11-15

... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Docket No. AD12-5-000] Voltage Coordination on High Voltage Grids; Notice of Staff Workshop Take notice that the Federal Energy Regulatory Commission will hold a Workshop on Voltage Coordination on High Voltage Grids on Thursday, December 1, 2011...

High energy density battery lithium thionyl chloride improved reverse voltage design

Science.gov (United States)

Zolla, A. E.

1981-12-01

A test program was conducted to demonstrate safety under voltage reversal conditions of the Altus 1400 AH HEDB cell. Eight cells of an improve Anode Grid Design, all cathode (carbon) limited, were forced discharged for 150% of their normal capacity. Minor design variations were tested at 6 amp, 20 C and 12 amp, 0 C with a lithium reference electrode and separate monitoring of current through the internal reverse voltage current shunt feature. There were no ventings and no appreciable increase in cell temperature or internal pressure.

SIW based multilayer transition and power divider in LTCC technology

KAUST Repository

Abuzaid, Hattan

2013-06-01

A multilayer transition and balanced power divider are presented for millimeter-wave system-on-package (SoP). These two components operate at Ka-band and exploit the substrate integrate waveguide (SIW) technology with its shielding characteristics and the Low-temperature co-fired ceramics (LTCC) technology for its high density integration. A coupling slot has been used to perform vertical integration, which can be easily optimized through its length. The measured input return loss within the bandwidth of interest (32 GHz-38 GHz) is less than -15 dB and -18 dB for the multilayer transition and the power divider, respectively. The lateral dimensions of a multilayer system, such as a feed network of an array, can be greatly reduced by employing these 3D slot-coupled components. © 2013 IEEE.

Nonlinear current-voltage behavior in PZT thin films

Energy Technology Data Exchange (ETDEWEB)

Xiao, Mi; Zhang, Weikang; Zhang, Zebin; Li, Shida; Zhang, Ping; Lan, Kuibo [Tianjin University, School of Electrical and Information Engineering, Tianjin (China)

2017-05-15

In this paper, Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films were prepared by sol-gel synthesis and characterized by X-ray diffraction, field emission scanning electron microscopy and current-voltage measurements. Here, we demonstrate that in addition to the outstanding ferroelectric and dielectric properties, the PZT films also have remarkably nonlinear current-voltage characteristics. Considering the contact of semi-conductive grains in the PZT films, a double Schottky barrier (DSB) model may be responsible for such phenomena. The test results show that with the decrease of annealing temperature and the increase of the film thickness, the threshold voltages (V{sub th}) increase obviously. The maximum V{sub th} value of 60.95 V and the minimum value of 6.9 V in our experiments were obtained from the five-layered samples annealed at 600 C and the two-layered samples annealed at 700 C, respectively. As a result, PZT thin film may lead to efficient switching and sensing devices. (orig.)

PC-based control of a high-voltage injector

International Nuclear Information System (INIS)

Constantin, F.

1998-01-01

The stability of high voltage injectors is one of the major problems in any accelerator system. Most of the troubles encountered in the normal operation of an accelerator are connected with the ion source and associated high voltage platforms, regardless of the source or high voltage generator type. The quality of the ion beam injected in the accelerator strongly depends on the power supplies used in the injector and on the ability to control the non-electrical parameters (gas-flow, temperature, etc.). A wide used method in controlling is based on optical links between high-voltage platform and computer, the adjustments being more or less automated. Although the method mentioned above can be still useful in injector control, a different approach is presented in this work, i.e., the computer itself is placed inside the high-voltage terminal. Only one optical link is still necessary to connect this computer with an user-friendly host at ground potential. Requirements: - varying and monitoring the filament current; - gas flow control in the ion source; - reading the vacuum values; - current and voltage control for the anodic, magnet, extraction, suppression and lens' sources. Even in the high voltage terminal there are compartments with different voltages regardless the floating ground. In our injector the extraction voltage is applied on the top of the ion source including the filament and the anodic voltage. The extraction voltage is of maximum 30 kV. In this situation a second optical link is required to transfer the control for the anodic and magnet source power supply assuming the dedicated computer on the floating ground. One PC is placed inside the high voltage terminal and one PC outside the injector. The optical link (more precisely two optical wires) connects the serial ports. The inside computer is equipped with two multipurpose ADC/DAC and digital I/O card. They permit to read or output DC levels ranging between 0 to 10 volts or TTL signals. The filament

The digital divide: philosophical reflection

Directory of Open Access Journals (Sweden)

Dedyulina Marina Anatolevna

2017-07-01

Full Text Available The problem of digital divide itself is interesting for philosophical reflection as it lies at the crossroads of interests of social and political philosophy, philosophy of technology and epistemology, and these are just some of them. Due to the constant development of information technologies and the introduction of new technologies the digital divide is a dynamic problem. The main aim of this work is to analyse the conceptual and descriptive aspects of the problem of the digital divide, to get a more complete picture of the phenomenon. The digital divide is a complex problem that has social, political, cultural and ethical aspects.

Organic dielectrics in high voltage cables

Energy Technology Data Exchange (ETDEWEB)

Vermeer, J

1962-03-01

It appears that the limit has been reached in the applicability of oil-impregnated paper as the dielectric for ehv cables, as with rising voltages the prevention of conductor losses becomes increasingly difficult, while the dielectric losses of the insulation, increasing as the square of the voltage, contribute to a greater extent to the temperature rise of the conductor. The power transmitting capacity of ehv cables reaches a maximum at 500 to 600 kV for these reasons. Apart from artificial cooling, a substantial improvement can be obtained only with the use of insulating materials with much lower dielectric losses; these can moreover be applied with a smaller wall thickness, but this means higher field strengths. Synthetic polymer materials meet these requirements but can be used successfully only in the form of lapped film tapes impregnated with suitable liquids. The electrical properties of these heterogeneous dielectrics, in particular, their impulse breakdown strengths are studied in detail.

Hysteretic current-voltage characteristics in RF-sputtered nanocrystalline TiO2 thin films

International Nuclear Information System (INIS)

Villafuerte, Manuel; Juarez, Gabriel; Heluani, Silvia P. de; Comedi, David

2007-01-01

We have measured the current-voltage characteristics at room temperature of a nanocrystalline TiO 2 thin film fabricated by reactive RF-sputtering deposition and sandwiched between ITO (indium-tin-oxide)-buffered glass substrate and an indium top electrode. The I-V characteristics are ohmic for low voltages and become non-linear, hysteretic and asymmetric as the voltage is increased. The system is shown to be well represented by two distinct resistance states in the non-ohmic region. Current transient evolutions were also measured for constant voltage excitations. The resistance is stable in time for voltages in the ohmic regime. In contrast, for voltages in the non-ohmic regime, the resistance has a small variation for a short period of time (order of tens seconds) and then increases with time. For those transients, long characteristic times (on the order of tens of minutes up to hours) were found. The behavior of the system is discussed on the basis of experimental results reported in the literature for similar systems and existing models for electric-field induced resistive switching

Capacitance–voltage and current–voltage characteristics for the study of high background doping and conduction mechanisms in GaAsN grown by chemical beam epitaxy

International Nuclear Information System (INIS)

Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

2013-01-01

Highlights: ► The cause of high background doping was confirmed and characterized. ► The current–voltage characteristics deviate from the thermionic emission. ► The recombination current is attributed to a hole trap (E V + 0.52 eV). ► The hole trap (E V + 0.52 eV) was confirmed by DLTS measurements. -- Abstract: The temperature dependence of capacitance–voltage (C–V) and current voltage (I–V) characteristics were used to study the cause of high background doping and the underlying current transport mechanisms in GaAsN Schottky diode grown by chemical beam epitaxy (CBE). In one hand, a nitrogen-related sigmoid increase of junction capacitance and ionized acceptor concentration was observed in the temperature range 70–100 K and was attributed to the thermal ionization of a nitrogen–hydrogen-related deep acceptor-state, with thermal activation energy of approximately 0.11 eV above the valence band maximum (VBM) of GaAsN. This acceptor state is mainly responsible for the high background doping in unintentionally doped GaAsN grown by CBE. On the other hand, the I–V characteristics at different temperatures were found to deviate from the well known pure thermionic-emission mechanism. Based on their fitting at each temperature, the recombination current in the space charge region of GaAsN Schottky diode was mainly attributed to a hole trap, localized at 0.51 eV above the VBM. Given the accuracy of measurements, this result was confirmed by deep level transient spectroscopy measurements. Nevertheless, considering the Shockley–Read–Hall model of generation-recombination, the recombination activity of this defect was quantified and qualified to be weak compared with the markedly degradation of minority carrier lifetime in GaAsN material

Alternating voltage-induced electrochemical synthesis of colloidal Au nanoicosahedra

Energy Technology Data Exchange (ETDEWEB)

McCann, Kevin; Cloud, Jacqueline E.; Yang, Yongan, E-mail: yonyang@mines.edu [Colorado School of Mines, Department of Chemistry and Geochemistry (United States)

2013-11-15

A simple method of alternating voltage-induced electrochemical synthesis has been developed to synthesize highly dispersed colloidal Au nanoicosahedra of 14 ± 3 nm in size. This simple and effective method uses a common transformer to apply a zero-offset alternating voltage to a pair of identical Au electrodes that are immersed in an electrolyte solution containing ligands. The obtained Au nanoicosahedra in this work are among the smallest Au icosahedra synthesized in aqueous solutions. A series of experimental conditions have been studied, such as voltage, the electrolyte identity and concentration, stabilizer identity and concentration, and reaction temperature. The mechanistic study indicates that Au nanoicosahedra are produced on electrode surfaces through an intermediate state of AuO{sub x}. The kinetic rate constant of these Au icosahedra in catalyzing the reduction of 4-nitrophenol with sodium borohydride is found much larger than the literature values of similar Au nanocrystals. In addition, the synthesis of Au–Pd-alloyed NCs has also been attempted.Graphical Abstract.

New digital reference current generation for shunt active power filter under distorted voltage conditions

Energy Technology Data Exchange (ETDEWEB)

Abdusalam, Mohamed; Karimi, Shahram; Saadate, Shahrokh [Groupe de Recherche en Electrotechnique et Electronique de Nancy (GREEN), CNRS UMR 7037 (France); Poure, Philippe [Laboratoire d' Instrumentation Electronique de Nancy (LIEN), EA 3440, Universite Henri Poincare - Nancy Universite, B.P. 239, 54506 Vandoeuvre les Nancy Cedex (France)

2009-05-15

In this paper, a new reference current computation method suitable for shunt active power filter control under distorted voltage conditions is proposed. The active power filter control is based on the use of self-tuning filters (STF) for the reference current generation and on a modulated hysteresis current controller. This active filter is intended for harmonic compensation of a diode rectifier feeding a RL load under distorted voltage conditions. The study of the active filter control is divided in two parts. The first one deals with the harmonic isolator which generates the harmonic reference currents and is experimentally implemented in a DS1104 card of a DSPACE prototyping system. The second part focuses on the generation of the switching pattern of the inverter by using a modulated hysteresis current controller, implemented in an analogue card. The use of STF instead of classical extraction filters allows extracting directly the voltage and current fundamental components in the {alpha}-{beta} axis without phase locked loop (PLL). The performances are good even under distorted voltage conditions. First, the effectiveness of the new proposed method is mathematically studied and verified by computer simulation. Then, experimental results are presented using a DSPACE system associated with the analogue current controller for a real shunt active power filter. (author)

Influence of current limitation on voltage stability with voltage sourced converter HVDC

DEFF Research Database (Denmark)

Zeni, Lorenzo; Jóhannsson, Hjörtur; Hansen, Anca Daniela

2013-01-01

A first study of voltage stability with relevant amount of Voltage Sourced Converter based High Voltage Direct Current (VSC-HVDC) transmission is presented, with particular focus on the converters’ behaviour when reaching their rated current. The detrimental effect of entering the current...

Voltage and capacity stability of the Hubble telescope nickel-hydrogen battery

Energy Technology Data Exchange (ETDEWEB)

Vaidyanathan, H. [Communications Satellite Corp., Clarksburg, MD (United States). COMSAT Labs.; Wajsgras, H. [NASA Goddard Space Flight Center, Greenbelt, MD (United States); Rao, G.M. [NASA Goddard Space Flight Center, Greenbelt, MD (United States)

1996-01-01

The power system of the Ubble Space Telescope includes two orbital replacement units, each containing three nickel-hydrogen (Ni-H{sub 2}) batteries of 88 Ah capacity. Since launch in April 1990, the batteries have completed 23 000 charge and discharge cycles and continue to meet the power demands of the satellite. The voltage, capacity, and pressure characteristics of all six batteries were analyzed to determine the state of health of the battery and to identify any signs of performance degradation. The battery pressures have changed to varying degrees. The end-of-charge pressure for battery 4 increased by 96 psi, while that for battery 3 decreased by 37 psi. The voltages of the individual cells show a decay rate of 0.69 mV per 1000 cycles, and the capacity of the batteries has apparently decreased, possibly due to the system being operated at a lower stage of charge. Autonomous battery operation involving charge termination at a preselected voltage continues to restore the energy dissipated during each orbit. The accumulated data on voltages and recharge ratios can be used to design new temperature-compensated voltage levels for similar missions that employ Ni-H{sub 2} batteries. (orig.)

Mapping of Residues Forming the Voltage Sensor of the Voltage-Dependent Anion-Selective Channel

Science.gov (United States)

Thomas, Lorie; Blachly-Dyson, Elizabeth; Colombini, Marco; Forte, Michael

1993-06-01

Voltage-gated ion-channel proteins contain "voltage-sensing" domains that drive the conformational transitions between open and closed states in response to changes in transmembrane voltage. We have used site-directed mutagenesis to identify residues affecting the voltage sensitivity of a mitochondrial channel, the voltage-dependent anion-selective channel (VDAC). Although charge changes at many sites had no effect, at other sites substitutions that increased positive charge also increased the steepness of voltage dependance and substitutions that decreased positive charge decreased voltage dependance by an appropriate amount. In contrast to the plasma membrane K^+ and Na^+ channels, these residues are distributed over large parts of the VDAC protein. These results have been used to define the conformational transitions that accompany voltage gating of an ion channel. This gating mechanism requires the movement of large portions of the VDAC protein through the membrane.

Comparison of the quantitative analysis performance between pulsed voltage atom probe and pulsed laser atom probe

Energy Technology Data Exchange (ETDEWEB)

Takahashi, J., E-mail: takahashi.3ct.jun@jp.nssmc.com [Advanced Technology Research Laboratories, Nippon Steel & Sumitomo Metal Corporation, 20-1 Shintomi, Futtsu-city, Chiba 293-8511 (Japan); Kawakami, K. [Advanced Technology Research Laboratories, Nippon Steel & Sumitomo Metal Corporation, 20-1 Shintomi, Futtsu-city, Chiba 293-8511 (Japan); Raabe, D. [Max-Planck Institut für Eisenforschung GmbH, Department for Microstructure Physics and Alloy Design, Max-Planck-Str. 1, 40237 Düsseldorf (Germany)

2017-04-15

Highlights: • Quantitative analysis in Fe-Cu alloy was investigated in voltage and laser atom probe. • In voltage-mode, apparent Cu concentration exceeded actual concentration at 20–40 K. • In laser-mode, the concentration never exceeded the actual concentration even at 20 K. • Detection loss was prevented due to the rise in tip surface temperature in laser-mode. • Preferential evaporation of solute Cu was reduced in laser-mode. - Abstract: The difference in quantitative analysis performance between the voltage-mode and laser-mode of a local electrode atom probe (LEAP3000X HR) was investigated using a Fe-Cu binary model alloy. Solute copper atoms in ferritic iron preferentially field evaporate because of their significantly lower evaporation field than the matrix iron, and thus, the apparent concentration of solute copper tends to be lower than the actual concentration. However, in voltage-mode, the apparent concentration was higher than the actual concentration at 40 K or less due to a detection loss of matrix iron, and the concentration decreased with increasing specimen temperature due to the preferential evaporation of solute copper. On the other hand, in laser-mode, the apparent concentration never exceeded the actual concentration, even at lower temperatures (20 K), and this mode showed better quantitative performance over a wide range of specimen temperatures. These results indicate that the pulsed laser atom probe prevents both detection loss and preferential evaporation under a wide range of measurement conditions.

Molecular mechanism of voltage sensing in voltage-gated proton channels

Science.gov (United States)

Rebolledo, Santiago; Perez, Marta E.

2013-01-01

Voltage-gated proton (Hv) channels play an essential role in phagocytic cells by generating a hyperpolarizing proton current that electrically compensates for the depolarizing current generated by the NADPH oxidase during the respiratory burst, thereby ensuring a sustained production of reactive oxygen species by the NADPH oxidase in phagocytes to neutralize engulfed bacteria. Despite the importance of the voltage-dependent Hv current, it is at present unclear which residues in Hv channels are responsible for the voltage activation. Here we show that individual neutralizations of three charged residues in the fourth transmembrane domain, S4, all reduce the voltage dependence of activation. In addition, we show that the middle S4 charged residue moves from a position accessible from the cytosolic solution to a position accessible from the extracellular solution, suggesting that this residue moves across most of the membrane electric field during voltage activation of Hv channels. Our results show for the first time that the charge movement of these three S4 charges accounts for almost all of the measured gating charge in Hv channels. PMID:23401575

Temperature dependence of current–voltage characteristics of Au/n ...

Indian Academy of Sciences (India)

Unknown

2000-05-05

May 5, 2000 ... factor with temperature has been explained considering lateral inhomogeneities in the Schottky barrier height ... The dependence of SBH on temperature can give ... effect in MS contacts, Tung has modeled the influence.

Dimethylacetamide as a film-forming additive for improving the cyclic stability of high voltage lithium-rich cathode at room and elevated temperature

International Nuclear Information System (INIS)

Tu, Wenqiang; Xing, Lidan; Xia, Pan; Xu, Mengqing; Liao, Youhao; Li, Weishan

2016-01-01

Highlights: • Addition of 1% DMAc improves the cyclic performances of LLO at room and elevated temperature. • DMAc oxidizes previously to the STD electrolyte and generates a protective film on the LLO surface. • The protective film is thin and uniform. - Abstract: In this work, dimethylacetamide (DMAc) was investigated as an electrolyte film-forming additive to improve the cyclic stability of high voltage Lithium-rich layered nickel manganese cobalt oxide (LLO) cathode at room (25 °C) and elevated (55 °C) temperature. At 0.5C rate, addition of 1% DMAc slightly decreases the initial discharge capacity of LLO from 187 to 179 mAh g −1 at room temperature and 255 to 246 mAh g −1 at elevated temperature, while significantly improves the capacity retention of LLO from 65.8% to 80.2% after 200 cycles at room temperature and from 21.1% to 66.7% after 150 cycles at elevated temperature. The mechanism of DMAc improving the cyclic stability of LLO was investigated via theoretical calculation and experimental characterizations, which demonstrated that DMAc oxidized preferential to the STD (1.0 M LiPF 6 in a mixed solvent of ethylene carbonate/ethyl methyl carbonate/diethyl carbonate) electrolyte, generating a thin and uniform film on the LLO surface. This film effectively suppresses the subsequent decomposition of STD electrolyte and further degradation of spinel phase converted from the layered structure of LLO, resulting in improved cyclic stability of LLO at room and elevated temperature.

Vivitron 1995, transient voltage simulation, high voltage insulator tests, electric field calculation

International Nuclear Information System (INIS)

Frick, G.; Osswald, F.; Heusch, B.

1996-01-01

Preliminary investigations showed clearly that, because of the discrete electrode structure of the Vivitron, important overvoltage leading to insulator damage can appear in case of a spark. The first high voltage tests showed damage connected with such events. This fact leads to a severe voltage limitation. This work describes, at first, studies made to understand the effects of transients and the associated over-voltage appearing in the Vivitron. Then we present the high voltage tests made with full size Vivitron components using the CN 6 MV machine as a pilot machine. Extensive field calculations were made. These involve simulations of static stresses and transient overvoltages, on insulating boards and electrodes. This work gave us the solutions for arrangements and modifications in the machine. After application, the Vivitron runs now without any sparks and damage at 20 MV. In the same manner, we tested column insulators of a new design and so we will find out how to get to higher voltages. Electric field calculation around the tie bars connecting the discrete electrodes together showed field enhancements when the voltages applied on the discrete electrodes are not equally distributed. This fact is one of the sources of discharges and voltage limitations. A scenario of a spark event is described and indications are given how to proceed towards higher voltages, in the 30 MV range. (orig.)

Enhancement of VUV emission from a coaxial xenon excimer ultraviolet lamp driven by distorted bipolar square voltages

Energy Technology Data Exchange (ETDEWEB)

Jou, S.Y.; Hung, C.T.; Chiu, Y.M.; Wu, J.S. [Department of Mechanical Engineering, National Chiao Tung University, Hsinchu (China); Wei, B.Y. [High-Efficiency Gas Discharge Lamps Group, Material and Chemical Research Laboratories, Hsinchu (China)

2011-12-15

Enhancement of vacuum UV emission (172 nm VUV) from a coaxial xenon excimer UV lamp (EUV) driven by distorted 50 kHz bipolar square voltages, as compared to that by sinusoidal voltages, is investigated numerically in this paper. A self-consistent radial one-dimensional fluid model, taking into consideration non-local electron energy balance, is employed to simulate the discharge physics and chemistry. The discharge is divided into two three-period portions; these include: the pre-discharge, the discharge (most intense at 172 nm VUV emission) and the post-discharge periods. The results show that the efficiency of VUV emission using the distorted bipolar square voltages is much greater than when using sinusoidal voltages; this is attributed to two major mechanisms. The first is the much larger rate of change of the voltage in bipolar square voltages, in which only the electrons can efficiently absorb the power in a very short period of time. Energetic electrons then generate a higher concentration of metastable (and also excited dimer) xenon that is distributed more uniformly across the gap, for a longer period of time during the discharge process. The second is the comparably smaller amount of ''wasted'' power deposition by Xe{sup +}{sub 2} in the post-discharge period, as driven by distorted bipolar square voltages, because of the nearly vanishing gap voltage caused by the shielding effect resulting from accumulated charges on both dielectric surfaces (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Dividing Discipline

DEFF Research Database (Denmark)

Kristensen, Peter Marcus

2012-01-01

the periphery of the network—security studies and international political economy in particular—but communication is also divided along the lines of geography and policy/theory. The article concludes that divisions notwithstanding, IR communication remains centered around American, general, and theoretical IR...

Simulation of the depletion voltage evolution of the ATLAS Pixel Detector

CERN Document Server

Beyer, Julien-christopher; The ATLAS collaboration

2017-01-01

The ATLAS Pixel detector has been operating since 2010 and consists of hybrid pixel modules where the sensitive elements are planar n-in-n sensors. In order to investigate and predict the evolution of the depletion voltage and of the leakage current in the different layers, a fully analytical implementation of the Hamburg model was derived. The parameters of the model, describing the dependence of the depletion voltage (U_depl) on fluence, temperature and time were tuned with a fit to the available measurements of Udepl in the last years of operation. A particular emphasis is put on the B-Layer, where the highest fluence has been accumulated up to now. A precise input of temperature and radiation dose is generated from the on-module temperature monitoring and the luminosity data. The analysis is then also extended to the Insertable B-Layer (IBL), installed at the end of Run-1, where we expect the fastest evolution of the radiation damage with luminosity, due to its closer position to the interaction point. Di...

Study of CMOS-SOI Integrated Temperature Sensing Circuits for On-Chip Temperature Monitoring.

Science.gov (United States)

Malits, Maria; Brouk, Igor; Nemirovsky, Yael

2018-05-19

This paper investigates the concepts, performance and limitations of temperature sensing circuits realized in complementary metal-oxide-semiconductor (CMOS) silicon on insulator (SOI) technology. It is shown that the MOSFET threshold voltage ( V t ) can be used to accurately measure the chip local temperature by using a V t extractor circuit. Furthermore, the circuit's performance is compared to standard circuits used to generate an accurate output current or voltage proportional to the absolute temperature, i.e., proportional-to-absolute temperature (PTAT), in terms of linearity, sensitivity, power consumption, speed, accuracy and calibration needs. It is shown that the V t extractor circuit is a better solution to determine the temperature of low power, analog and mixed-signal designs due to its accuracy, low power consumption and no need for calibration. The circuit has been designed using 1 µm partially depleted (PD) CMOS-SOI technology, and demonstrates a measurement inaccuracy of ±1.5 K across 300 K⁻500 K temperature range while consuming only 30 µW during operation.

Josephson tunneling current in the presence of a time-dependent voltage

International Nuclear Information System (INIS)

Harris, R.E.

1975-01-01

The expression for the current through a small Josephson tunnel junction in the presence of a time-dependent voltage is presented. Four terms appear: the usual sine, cosine, and quasiparticle terms, and a reactive part of the quasiparticle current. The latter is displayed graphically as a function of both energy and temperature. It is shown that in the limit of zero dc voltage and small ac voltage, the Josephson device behaves linearly. Interpretation of the in- and out-of-phase components of the current in this linear limit is given to provide physical insight into some of the details of the general expression. Finally, the tunneling current in the linear limit is shown for thin tunneling barriers to be proportional to the current in a single superconductor in the presence of an electromagnetic field

Technological Aspects: High Voltage

CERN Document Server

Faircloth, D.C.

2013-12-16

This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

Capacitor Voltages Measurement and Balancing in Flying Capacitor Multilevel Converters Utilizing a Single Voltage Sensor

DEFF Research Database (Denmark)

Farivar, Glen; Ghias, Amer M. Y. M.; Hredzak, Branislav

2017-01-01

This paper proposes a new method for measuring capacitor voltages in multilevel flying capacitor (FC) converters that requires only one voltage sensor per phase leg. Multiple dc voltage sensors traditionally used to measure the capacitor voltages are replaced with a single voltage sensor at the ac...... side of the phase leg. The proposed method is subsequently used to balance the capacitor voltages using only the measured ac voltage. The operation of the proposed measurement and balancing method is independent of the number of the converter levels. Experimental results presented for a five-level FC...

Control and Testing of a Dynamic Voltage Restorer (DVR) at Medium Voltage Level

DEFF Research Database (Denmark)

Nielsen, John Godsk; Newman, Michael; Nielsen, Hans Ove

2004-01-01

power sensitive loads from voltage sags. This paper reports practical test results obtained on a medium voltage (10 kV) level using a DVR at a Distribution test facility in Kyndby, Denmark. The DVR was designed to protect a 400-kVA load from a 0.5-p.u. maximum voltage sag. The reported DVR verifies......The dynamic voltage restorer (DVR) has become popular as a cost effective solution for the protection of sensitive loads from voltage sags. Implementations of the DVR have been proposed at both a low voltage (LV) level, as well as a medium voltage (MV) level; and give an opportunity to protect high...... the use of a feed-forward and feed-back technique of the controller and it obtains both good transient and steady state responses. The effect of the DVR on the system is experimentally investigated under both faulted and non-faulted system states, for a variety of linear and non-linear loads. Variable...

Electronic temperature control and measurements reactor fuel rig circuits

Energy Technology Data Exchange (ETDEWEB)

Glowacki, S W

1980-01-01

The electronic circuits of two digital temperature meters developed for the thermocouple of Ni-NiCr type are described. The output thermocouple signal as converted by means of voltage-to-freguency converter. The frequency is measured by a digital scaler controled by quartz generator signals. One of the described meter is coupled with digital temperature controler which drives the power stage of the reactor rig heater. The internal rig temperature is measured by the thermocouple providing the input signal to the mentioned voltage-to-frequency converter, that means the circuits work in the negative feedback loop. The converter frequency-to-voltage ratio is automatically adjusted to match to thermocouple sensitivity changes in the course of the temperature variations. The accuracy of measuring system is of order of +- 1degC for thermocouple temperature changes from 523 K up to 973 K (50degC up to 700degC).

Voltage transients in thin-film InSb Hall sensor

Science.gov (United States)

Bardin, Alexey; Ignatjev, Vyacheslav; Orlov, Andrey; Perchenko, Sergey

The work is reached to study temperature transients in thin-film Hall sensors. We experimentally study InSb thin-film Hall sensor. We find transients of voltage with amplitude about 10 μ V on the sensor ports after current switching. We demonstrate by direct measurements that the transients is caused by thermo-e.m.f., and both non-stationarity and heterogeneity of temperature in the film. We find significant asymmetry of temperature field for different direction of the current, which is probably related to Peltier effect. The result can be useful for wide range of scientist who works with switching of high density currents in any thin semiconductor films.

Engineering of a genetically encodable fluorescent voltage sensor exploiting fast Ci-VSP voltage-sensing movements.

Science.gov (United States)

Lundby, Alicia; Mutoh, Hiroki; Dimitrov, Dimitar; Akemann, Walther; Knöpfel, Thomas

2008-06-25

Ci-VSP contains a voltage-sensing domain (VSD) homologous to that of voltage-gated potassium channels. Using charge displacement ('gating' current) measurements we show that voltage-sensing movements of this VSD can occur within 1 ms in mammalian membranes. Our analysis lead to development of a genetically encodable fluorescent protein voltage sensor (VSFP) in which the fast, voltage-dependent conformational changes of the Ci-VSP voltage sensor are transduced to similarly fast fluorescence read-outs.

Technological Aspects: High Voltage

International Nuclear Information System (INIS)

Faircloth, D C

2013-01-01

This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered. (author)

THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS

Directory of Open Access Journals (Sweden)

Peter Hornak

2017-12-01

Full Text Available Tungsten carbide (WC/C layers are often researched due to their outstanding mechanical and tribological properties. Here, optimized indented hardness (HIT, indentation modulus (EIT and coefficient of friction (COF values were measured to study the effect of pressure and bias voltage on WC/C layers, deposited on Si by DC magnetron spluttering. Maximal values of HIT=37.2±4.8 GPa, EIT=447±28 GPa and COF=0.64±0.09 were obtained. Additionally, the effect of temperature on optimized layers deposited with and without N₂ and N₂+SiH₄ annealed at 200 °C, 500 °C and 800 °C, were also investigated. The values of HIT, EIT and COF and, observed morphology and structural composition of these contaminated and non-contaminated WC/C layers were evaluated. It was found that layer degradation occurred at different rates depending on the temperature and gas mixture used during the annealing and deposition process, respectively.

Voltage Management in Unbalanced Low Voltage Networks Using a Decoupled Phase-Tap-Changer Transformer

DEFF Research Database (Denmark)

Coppo, Massimiliano; Turri, Roberto; Marinelli, Mattia

2014-01-01

The paper studies a medium voltage-low voltage transformer with a decoupled on load tap changer capability on each phase. The overall objective is the evaluation of the potential benefits on a low voltage network of such possibility. A realistic Danish low voltage network is used for the analysis...

Automatic voltage imbalance detector

Science.gov (United States)

Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

1984-01-01

A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

Engineering of a genetically encodable fluorescent voltage sensor exploiting fast Ci-VSP voltage-sensing movements.

Directory of Open Access Journals (Sweden)

Alicia Lundby

2008-06-01

Full Text Available Ci-VSP contains a voltage-sensing domain (VSD homologous to that of voltage-gated potassium channels. Using charge displacement ('gating' current measurements we show that voltage-sensing movements of this VSD can occur within 1 ms in mammalian membranes. Our analysis lead to development of a genetically encodable fluorescent protein voltage sensor (VSFP in which the fast, voltage-dependent conformational changes of the Ci-VSP voltage sensor are transduced to similarly fast fluorescence read-outs.

Managing Temperature Effects in Nanoscale Adaptive Systems

CERN Document Server

Wolpert, David

2012-01-01

This book discusses new techniques for detecting, controlling, and exploiting the impacts of temperature variations on nanoscale circuits and systems.  It provides a holistic discussion of temperature management, including physical phenomena (reversal of the MOSFET temperature dependence) that have recently become problematic, along with circuit techniques for detecting, controlling, and adapting to these phenomena. A detailed discussion is also included of the general aspects of thermal-aware system design and management of temperature-induced faults. A new sensor system is described that can determine the temperature dependence as well as the operating temperature to improve system reliability.  A new method is presented to control a circuit’s temperature dependence by individually tuning pull-up and pull-down networks to their temperature-insensitive operating points. This method extends the range of supply voltages that can be made temperature-insensitive, achieving insensitivity at nominal voltage fo...

Observation of voltage fluctuations in a superconducting magnet during MHD power generation

International Nuclear Information System (INIS)

Smith, R.P.; Niemann, R.C.; Kraimer, M.R.; Zinneman, T.E.

1978-01-01

Fluctuating voltage signals on the potential taps of the ANL 5.0 T MHD Superconducting Dipole Magnet have been observed during MHD power generation at the U-25B Facility at the High Temperature Institute (IVTAN) Moscow, USSR. Various other thermodynamic and electrical parameters of the U-25B flow train have been recorded, and statistical analysis concerning correlations between the phenomena with a view of discerning causal interdependence is in progress. Voltage fluctuations observed at the magnet terminals are analyzed with special emphasis on magnet stability

Bias Voltage-Dependent Impedance Spectroscopy Analysis of Hydrothermally Synthesized ZnS Nanoparticles

Science.gov (United States)

Dey, Arka; Dhar, Joydeep; Sil, Sayantan; Jana, Rajkumar; Ray, Partha Pratim

2018-04-01

In this report, bias voltage-dependent dielectric and electron transport properties of ZnS nanoparticles were discussed. ZnS nanoparticles were synthesized by introducing a modified hydrothermal process. The powder XRD pattern indicates the phase purity, and field emission scanning electron microscope image demonstrates the morphology of the synthesized sample. The optical band gap energy (E g = 4.2 eV) from UV measurement explores semiconductor behavior of the synthesized material. The electrical properties were performed at room temperature using complex impedance spectroscopy (CIS) technique as a function of frequency (40 Hz-10 MHz) under different forward dc bias voltages (0-1 V). The CIS analysis demonstrates the contribution of bulk resistance in conduction mechanism and its dependency on forward dc bias voltages. The imaginary part of the impedance versus frequency curve exhibits the existence of relaxation peak which shifts with increasing dc forward bias voltages. The dc bias voltage-dependent ac and dc conductivity of the synthesized ZnS was studied on thin film structure. A possible hopping mechanism for electrical transport processes in the system was investigated. Finally, it is worth to mention that this analysis of bias voltage-dependent dielectric and transport properties of as-synthesized ZnS showed excellent properties for emerging energy applications.

Temperature Dependency and Alpha Response of Semi-Insulating GaAs Schottky Radiation Detector at Low Bias Voltage

International Nuclear Information System (INIS)

Kang, Sang Mook; Ha, Jang Ho; Park, Se Hwan; Kim, Han Soo; Kim, Yong Kyun

2009-01-01

The last decade has seen a growing interest in semiconductor radiation detectors operated at room or nearly room temperature. Great efforts have been invested in the development of radiation detectors based on semi-insulating (SI) GaAs. The main reasons are as follows: (i) high resistance against radiation damage; (ii) it possesses a good energy resolution, which relates to its active volume; (iii) such a detector also exhibits fast signal rise times, which results from a high mobility and drift velocity of charge carriers; (iv) its large band gap energy allows a SI GaAs detector to operate at room temperature. Other important features are a good technology base and low production and operating costs. An alpha particle monitoring method for the detection of Pu-238 and U-235 is becoming important in homeland security. Alpha measurement in a vacuum is known to provide a good resolution sufficient to separate an isotope abundance in nuclear materials. However, in order to apply it to a high radiation field like a spent fuel treatment facility, a nuclear material loading and unloading process in a vacuum is one of the great disadvantages. Therefore, the main technical issue is to develop a detector for alpha detection at air condition and low power operation for integration type device. In this study we fabricated GaAs Schottky detector by using semi-insulating (SI) wafer and measured current-voltage characteristic curve and alpha response with 5.5 MeV Am-241 source

Temperature and voltage dependence of barrier height and ideality factor in Au/0.07 graphene-doped PVA/n-Si structures

Science.gov (United States)

Altındal Yerişkin, S.; Balbaşı, M.; Demirezen, S.

2017-04-01

In this study, Au/0.07 graphene-doped PVA/n-Si structures were fabricated and current conduction mechanism in these structures were investigated in the temperature range of 80-380 K through forward bias current-voltage ( I- V) measurements. Main electrical parameters were extracted from I-V data. Zero-bias barrier height (\\overline{Φ}_{B0}) and ideality factor (n) were found strong functions of temperature and their values ranged from 0.234 eV and 4.98 (at 80 K) to 0.882 eV and 1.15 (at 380 K), respectively. Φ ap versus q/2k T plot was drawn to obtain an evidence of a Gaussian distribution of the barrier heights (BHs) and it revealed two distinct linear regions with different slopes and intercepts. The mean values of BH ( Φ Bo) and zero-bias standard deviation (σ s ) were obtained from the intercept and slope of the linear regions of this plot as 1.30 eV and 0.16 V for the first region (280-380 K) and 0.74 eV and 0.085 V for the second region (80-240 K), respectively. Thus, the values of \\overline{Φ}_{B0} and effective Richardson constant ( A*) were also found from the intercept and slope of the modified Richardson plot [ln( I s /T 2) - q 2 σ o 2 /2k 2 T 2 vs q/ kT] as 1.31 eV and 130 A/cm2 K2 for the first region and 0.76 eV and 922 A/cm2 K2 for the second region, respectively. The value of A* for the first region was very close to the theoretical value for n-Si (112 A/cm2 K2). The energy density distribution profile of surface states (Nss) was also extracted from the forward bias I-V data by taking into account voltage dependent effective BH (Φe) and n.

Electrocardiogram voltage discordance: Interpretation of low QRS voltage only in the precordial leads.

Science.gov (United States)

Kim, Diana H; Verdino, Ralph J

To define clinical correlates of low voltage isolated to precordial leads on the surface electrocardiogram (ECG). Low voltage (V) on the ECG is defined as QRS Vvoltage isolated to the precordial leads with normal limb lead voltages is unclear. Twelve-lead ECGs with QRS V>5mm in one or more limb leads and voltage was found in 256 of 150,000 ECGs (~0.2%). 50.4% of patients had discordant ECGs that correlated with classic etiologies, with a higher incidence of LV dilation in those with classic etiologies than those without. Low precordial voltage is associated with classic etiologies and LV dilation. Copyright © 2017 Elsevier Inc. All rights reserved.

Digital characteristics of CMOS devices at cryogenic temperatures

International Nuclear Information System (INIS)

Deen, M.J.

1989-01-01

This paper presents the results of measurements of the digital characteristics of CMOS devices as a function of temperature between 77 and 300 K and a supply voltage between 3 and 20 V. Using a fixed supply of 5 V, the low noise margin (NM L decreased from 2.54 to 2.11 V, but the high noise margin NM H ) increased from 2.18 to 2.40 V as the temperature was increased from 77 to 300 K. On lowering the temperature from 300 to 77 K, both V 1L and V 1H increased and the transition between these input logic voltages became more abrupt. These and other digital characteristics including noise immunity, V H - V L , and V 1H - V 1L all showed a smooth monotonic improvement as the temperature decreased. These results can be qualitatively explained as due to the increase in the absolute threshold voltages of the NMOS and PMOS transistors and to the decrease in the β N /β rho ratio as the temperature is lowered

Measurement of Internal Friction for Tungsten by the Curve Vibrating Method with Variation of Voltage and Temperature

Directory of Open Access Journals (Sweden)

Elin Yusibani

2013-12-01

Full Text Available Application of a curved vibrating wire method (CVM to measure gas viscosity has been widely used. A fine Tungsten wire with 50 mm of diameter is bent into a semi-circular shape and arranged symmetrically in a magnetic field of about 0.2 T. The frequency domain is used for calculating the viscosity as a response for forced oscillation of the wire. Internal friction is one of the parameter in the CVM which is has to be measured beforeahead. Internal friction coefficien for the wire material which is the inverse of the quality factor has to be measured in a vacuum condition. The term involving internal friction actually represents the effective resistance of motion due to all non-viscous damping phenomena including internal friction and magnetic damping. The testing of internal friction measurement shows that at different induced voltage and elevated temperature at a vacuum condition, it gives the value of internal friction for Tungsten is around 1 to 4 10-4.

Low-temperature current-voltage characteristics of MIS Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky diodes

Energy Technology Data Exchange (ETDEWEB)

Biber, M

2003-01-01

The current-voltage (I-V) characteristics of metal-insulating layer-semiconductor Cu/n-GaAs and inhomogeneous Cu/n-GaAs Schottky barrier diodes were determined in the temperature range 80-300 K. The evaluation of the experimental I-V data reveals a nonlinear increase of the zero-bias barrier height (qPHI{sub 0}) for the inhomogeneous Cu/n-GaAs Schottky barrier diodes and a linear increase of the zero-bias barrier height (qPHI{sub 0}) for Cu/n-GaAs Schottky barrier diodes with an interfacial layer. The ideality factor n decreases with increasing temperature for all diodes. Furthermore, the changes in PHI{sub 0} and n become quite significant below 150 K and the plot of ln(I{sub 0}/T{sup 2}) versus 1/T exhibits a non-linearity below 180 K for the inhomogeneous barrier diodes. Such behavior is attributed to barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the interface. The value of the Richardson constant was found to be 5.033 A/cm{sup 2} K{sup 2}, which is close to the theoretical value of 8.16 A/cm{sup 2} K{sup 2} used for the determination of the zero-bias barrier height.

Low-Voltage Consumption Coordination for Loss Minimization and Voltage Control

DEFF Research Database (Denmark)

Juelsgaard, Morten; Sloth, Christoffer; Wisniewski, Rafal

2014-01-01

This work presents a strategy for minimizing active power losses in low-voltage grids, by coordinating the consumption of electric vehicles and power generation from solar panels. We show that minimizing losses, also reduces voltage variations, and illustrate how this may be employed for increasing...

Digital Divide in India: Measurement, Determinants and Policy for Addressing the Challenges in Bridging the Digital Divide

OpenAIRE

Sumanjeet Singh

2010-01-01

Existing studies of the digital divide reveals the gap that exists between those who have access to ICTs and those who do not create exclusion, endanger social integration and hamper economic growth. The digital divide has many dimensions and can be categorized as global, regional and national. At national level, there is no single divide, but multiple divides: for instance, within countries, between men and women, young and elderly, rich and poor and most importantly rural and urban. The pre...

DC-link Voltage Control to Compensate Voltage Deviation for PV–BESSs Integrated System in Low-Voltage (LV Networks

Directory of Open Access Journals (Sweden)

Lee Gyu-sub

2016-01-01

Full Text Available The exhaustion of fossil fuel and the greenhouse gas emission are one of the most significant energy and environmental issues, respectively. Photovoltaic (PV generators and battery energy storage systems (BESSs have been significantly increased for recent years. The BESSs are mainly used for smoothing active power fluctuation of the PV. In this paper, PV–BESSs integration of two DC/DC converters and one AC/DC converter is investigated and DC-link voltage control to compensate the AC voltage deviation is proposed for the PV‒BESS system in low-voltage (LV networks.

Branching in current-voltage characteristics of intrinsic Josephson junctions

International Nuclear Information System (INIS)

Shukrinov, Yu M; Mahfouzi, F

2007-01-01

We study branching in the current-voltage characteristics of the intrinsic Josephson junctions of high-temperature superconductors in the framework of the capacitively coupled Josephson junction model with diffusion current. A system of dynamical equations for the gauge-invariant phase differences between superconducting layers for a stack of ten intrinsic junctions has been numerically solved. We have obtained a total branch structure in the current-voltage characteristics. We demonstrate the existence of a 'breakpoint region' on the current-voltage characteristics and explain it as a result of resonance between Josephson and plasma oscillations. The effect of the boundary conditions is investigated. The existence of two outermost branches and correspondingly two breakpoint regions for the periodic boundary conditions is shown. One branch, which is observed only at periodic boundary conditions, corresponds to the propagating of the plasma mode. The second one corresponds to the situation when the charge oscillations on the superconducting layers are absent, excluding the breakpoint. A time dependence of the charge oscillations at breakpoints is presented

Temperature gradient measurements by using thermoelectric effect in CNTs-silicone adhesive composite.

Directory of Open Access Journals (Sweden)

Muhammad Tariq Saeed Chani

Full Text Available This work presents the fabrication and investigation of thermoelectric cells based on composite of carbon nanotubes (CNT and silicone adhesive. The composite contains CNT and silicon adhesive 1∶1 by weight. The current-voltage characteristics and dependences of voltage, current and Seebeck coefficient on the temperature gradient of cell were studied. It was observed that with increase in temperature gradient the open circuit voltage, short circuit current and the Seebeck coefficient of the cells increase. Approximately 7 times increase in temperature gradient increases the open circuit voltage and short circuit current up to 40 and 5 times, respectively. The simulation of experimental results is also carried out; the simulated results are well matched with experimental results.

A Ratiometric Method for Johnson Noise Thermometry Using a Quantized Voltage Noise Source

Science.gov (United States)

Nam, S. W.; Benz, S. P.; Martinis, J. M.; Dresselhaus, P.; Tew, W. L.; White, D. R.

2003-09-01

Johnson Noise Thermometry (JNT) involves the measurement of the statistical variance of a fluctuating voltage across a resistor in thermal equilibrium. Modern digital techniques make it now possible to perform many functions required for JNT in highly efficient and predictable ways. We describe the operational characteristics of a prototype JNT system which uses digital signal processing for filtering, real-time spectral cross-correlation for noise power measurement, and a digitally synthesized Quantized Voltage Noise Source (QVNS) as an AC voltage reference. The QVNS emulates noise with a constant spectral density that is stable, programmable, and calculable in terms of known parameters using digital synthesis techniques. Changes in analog gain are accounted for by alternating the inputs between the Johnson noise sensor and the QVNS. The Johnson noise power at a known temperature is first balanced with a synthesized noise power from the QVNS. The process is then repeated by balancing the noise power from the same resistor at an unknown temperature. When the two noise power ratios are combined, a thermodynamic temperature is derived using the ratio of the two QVNS spectral densities. We present preliminary results where the ratio between the gallium triple point and the water triple point is used to demonstrate the accuracy of the measurement system with a standard uncertainty of 0.04 %.

Temperature influence and reset voltage study of bipolar resistive ...

Indian Academy of Sciences (India)

Moreover, the Cu/ZrO2/ATO device which the ZrO2 thin film annealed at 300 °C can be measured as resistive switching sweeps at 200, 100 and 50 K. It was found that the ratio of off/on reduced when the measured temperature decreased. When the - measurement temperature decreases, on decreases obviously ...

Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

Science.gov (United States)

Adell, Philippe C.; Mojarradi, Mohammad; DelCastillo, Linda Y.; Vo, Tuan A.

2011-01-01

A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

The electronic temperature control and measurements reactor fuel rig circuits

International Nuclear Information System (INIS)

Glowacki, S.W.

1980-01-01

The electronic circuits of two digital temperature meters developed for the thermocouple of Ni-NiCr type are described. The output thermocouple signal as converted by means of voltage-to-freguency converter. The frequency is measured by a digital scaler controled by quartz generator signals. One of the described meter is coupled with digital temperature controler which drives the power stage of the reactor rig heater. The internal rig temperature is measured by the thermocouple providing the input signal to the mentioned voltage-to-frequency converter, that means the circuits work in the negative feedback loop. The converter frequency-to-voltage ratio is automatically adjusted to match to thermocouple sensitivity changes in the course of the temperature variations. The accuracy of measuring system is of order of +- 1degC for thermocouple temperature changes from 523 K up to 973 K (50degC up to 700degC). (author)

Tech, Teachers & Teens: Bridging the Divide

Science.gov (United States)

Stuht, Amy Colcord; Colcord, Cean

2011-01-01

In past decades, the "digital divide" referred to the gap between those who could afford access to technology and those who could not. The divide has shifted in recent years to reflect the growing technological chasm between teachers and their students: today's schools and teenagers' worlds. The digital divide is widening and deepening…

Field angle dependence of voltage-induced ferromagnetic resonance under DC bias voltage

International Nuclear Information System (INIS)

Shiota, Yoichi; Miwa, Shinji; Tamaru, Shingo; Nozaki, Takayuki; Kubota, Hitoshi; Fukushima, Akio; Suzuki, Yoshishige; Yuasa, Shinji

2016-01-01

We studied the rectification function of microwaves in CoFeB/MgO-based magnetic tunnel junctions using voltage-induced ferromagnetic resonance (FMR). Our findings reveal that the shape of the structure of the spectrum depends on the rotation angle of the external magnetic field, providing clear evidence that FMR dynamics are excited by voltage-induced magnetic anisotropy changes. Further, enhancement of the rectified voltage was demonstrated under a DC bias voltage. In our experiments, the highest microwave detection sensitivity obtained was 350 mV/mW, at an RF frequency of 1.0 GHz and field angle of θ_H=80°, ϕ_H=0°. The experimental results correlated with those obtained via simulation, and the calculated results revealed the magnetization dynamics at the resonance state. - Highlights: • Examined voltage-induced ferromagnetic resonance (FMR) under various field angles. • FMR dynamics are excited by voltage-induced magnetic anisotropy changes. • Microwave detection sensitivity depends on input RF and elevation angle. • Microwave detection sensitivity=350 mV/mW at RF=1.0 GHz, θ_H=80°, ϕ_H=0°.

High voltage test techniques

CERN Document Server

Kind, Dieter

2001-01-01

The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

Pulse-voltage fast generator

International Nuclear Information System (INIS)

Valeev, R.I.; Nikiforov, M.G.; Kharchenko, A.F.

1988-01-01

The design is described and the test results of a four-channel pulse-voltage generator with maximum output voltage 200 kV are presented. The measurement results of generator triggering time depending on the value and polarity of the triggering voltage pulse for different triggering circuits are presented. The tests have shown stable triggering of all four channels of the generator in the range up to 40 % from selfbreakdown voltage. The generator triggering delay in the given range is <25 ns, asynchronism in channel triggering is <±1 ns

Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory.

Science.gov (United States)

Li, Xiang Yuan; Shao, Xing Long; Wang, Yi Chuan; Jiang, Hao; Hwang, Cheol Seong; Zhao, Jin Shi

2017-02-09

Ta 2 O 5 has been an appealing contender for the resistance switching random access memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated formation and rupture of the conducting filaments (CFs) in the oxide layer, which are accompanied by the almost inevitable randomness of the switching parameters. In this work, a 1 to 2 nm-thick Ti layer was deposited on the 10 nm-thick Ta 2 O 5 RS layer, which greatly improved the RS performances, including the much-improved switching uniformity. The Ti metal layer was naturally oxidized to TiO x (x resistance value was comparable to the on-state resistance of the Ta 2 O 5 RS layer. The series resistor TiO x efficiently suppressed the adverse effects of the voltage (or current) overshooting at the moment of switching by the appropriate voltage partake effect, which increased the controllability of the CF formation and rupture. The switching cycle endurance was increased by two orders of magnitude even during the severe current-voltage sweep tests compared with the samples without the thin TiO x layer. The Ti deposition did not induce any significant overhead to the fabrication process, making the process highly promising for the mass production of a reliable ReRAM.

Low-voltage gyrotrons

International Nuclear Information System (INIS)

Glyavin, M. Yu.; Zavolskiy, N. A.; Sedov, A. S.; Nusinovich, G. S.

2013-01-01

For a long time, the gyrotrons were primarily developed for electron cyclotron heating and current drive of plasmas in controlled fusion reactors where a multi-megawatt, quasi-continuous millimeter-wave power is required. In addition to this important application, there are other applications (and their number increases with time) which do not require a very high power level, but such issues as the ability to operate at low voltages and have compact devices are very important. For example, gyrotrons are of interest for a dynamic nuclear polarization, which improves the sensitivity of the nuclear magnetic resonance spectroscopy. In this paper, some issues important for operation of gyrotrons driven by low-voltage electron beams are analyzed. An emphasis is made on the efficiency of low-voltage gyrotron operation at the fundamental and higher cyclotron harmonics. These efficiencies calculated with the account for ohmic losses were, first, determined in the framework of the generalized gyrotron theory based on the cold-cavity approximation. Then, more accurate, self-consistent calculations for the fundamental and second harmonic low-voltage sub-THz gyrotron designs were carried out. Results of these calculations are presented and discussed. It is shown that operation of the fundamental and second harmonic gyrotrons with noticeable efficiencies is possible even at voltages as low as 5–10 kV. Even the third harmonic gyrotrons can operate at voltages about 15 kV, albeit with rather low efficiency (1%–2% in the submillimeter wavelength region).

A Novel Index for Online Voltage Stability Assessment Based on Correlation Characteristic of Voltage Profiles

Directory of Open Access Journals (Sweden)

M. R. Aghamohammadi

2011-06-01

Full Text Available Abstract: Voltage instability is a major threat for security of power systems. Preserving voltage security margin at a certain limit is a vital requirement for today’s power systems. Assessment of voltage security margin is a challenging task demanding sophisticated indices. In this paper, for the purpose of on line voltage security assessment a new index based on the correlation characteristic of network voltage profile is proposed. Voltage profile comprising all bus voltages contains the effect of network structure, load-generation patterns and reactive power compensation on the system behaviour and voltage security margin. Therefore, the proposed index is capable to clearly reveal the effect of system characteristics and events on the voltage security margin. The most attractive feature for this index is its fast and easy calculation from synchronously measured voltage profile without any need to system modelling and simulation and without any dependency on network size. At any instant of system operation by merely measuring network voltage profile and no further simulation calculation this index could be evaluated with respect to a specific reference profile. The results show that the behaviour of this index with respect to the change in system security is independent of the selected reference profile. The simplicity and easy calculation make this index very suitable for on line application. The proposed approach has been demonstrated on IEEE 39 bus test system with promising results showing its effectiveness and applicability.

Advanced Control of the Dynamic Voltage Restorer for Mitigating Voltage Sags in Power Systems

Directory of Open Access Journals (Sweden)

Dung Vo Tien

2018-01-01

Full Text Available The paper presents a vector control with two cascaded loops to improve the properties of Dynamic Voltage Restorer (DVR to minimize Voltage Sags on the grid. Thereby, a vector controlled structure was built on the rotating dq-coordinate system with the combination of voltage control and the current control. The proposed DVR control method is modelled using MATLAB-Simulink. It is tested using balanced/unbalanced voltage sags as well as fluctuant and distorted voltages. As a result, by using this controlling method, the dynamic characteristics of the system have been improved significantly. The system performed with higher accuracy, faster response and lower distortion in the voltage sags compensation. The paper presents real time experimental results to verify the performance of the proposed method in real environments.

Current-voltage hysteresis and dielectric properties of PVA coated MWCNT film

Science.gov (United States)

Das, Amit Kumar; Meikap, Ajit Kumar

2017-12-01

In this work, we have prepared polyvinyl alcohol (PVA) coated multiwall carbon nanotube (MWCNT) film by an in situ chemical oxidative preparation technique. The thermogravimetric analysis clearly explains the thermal degradation of pure polymer and polymer nanocomposite film. We have studied the AC electrical transport properties and current-voltage (I-V) characteristic of PVA-MWCNT composites within the temperature range 300 ≤ T ≤ 423 K and frequency range 150 Hz ≤ f ≤ 2 MHz. It is observed that the dielectric constant of the composite film increases significantly. The frequency variation of AC conductivity follows the power law ( ωS ) and a sharp transition from small polaron tunneling to correlated barrier hopping model is found. The imaginary part of electric modulus shows non-Debye type asymmetric behaviour. The impedance spectroscopy shows the negative temperature coefficient of resistance of the composite film. Nyquist plot of the composite film at different temperatures is established from impedance measurement. The current-voltage characteristic (under ± 20 V) shows hysteresis behaviour and field dependent resistance. We simulate the experimentally observed current density-electric field data with the established theory.

Current-voltage hysteresis and dielectric properties of PVA coated MWCNT film

Science.gov (United States)

Das, Amit Kumar; Meikap, Ajit Kumar

2018-06-01

In this work, we have prepared polyvinyl alcohol (PVA) coated multiwall carbon nanotube (MWCNT) film by an in situ chemical oxidative preparation technique. The thermogravimetric analysis clearly explains the thermal degradation of pure polymer and polymer nanocomposite film. We have studied the AC electrical transport properties and current-voltage (I-V) characteristic of PVA-MWCNT composites within the temperature range 300 ≤ T ≤ 423 K and frequency range 150 Hz ≤ f ≤ 2 MHz. It is observed that the dielectric constant of the composite film increases significantly. The frequency variation of AC conductivity follows the power law ( ωS ) and a sharp transition from small polaron tunneling to correlated barrier hopping model is found. The imaginary part of electric modulus shows non-Debye type asymmetric behaviour. The impedance spectroscopy shows the negative temperature coefficient of resistance of the composite film. Nyquist plot of the composite film at different temperatures is established from impedance measurement. The current-voltage characteristic (under ± 20 V) shows hysteresis behaviour and field dependent resistance. We simulate the experimentally observed current density-electric field data with the established theory.

Temperature effects in differential mobility spectrometry

Science.gov (United States)

Krylov, Evgeny V.; Coy, Stephen L.; Nazarov, Erkinjon G.

2009-01-01

Drift gas temperature and pressure influence differential mobility spectrometer (DMS) performance, changing DMS peak positions, heights and widths. This study characterizes the effect of temperature on DMS peak positions. Positive ions of methyl salicylate, DMMP, and toluene, and negative ions of methyl salicylate and the reactant ion peaks were observed in purified nitrogen in the Sionex microDMx planar DMS. Measurements were made at ambient pressure (1 atm) at temperatures from 25 °C to 150 °C in a planar sensor with height 0.5 mm. Peak value of the separation voltage asymmetric waveform was scanned from 500 V to 1500 V. Compensation voltage (DMS peak position) showed a strong variation with temperature for all investigated ions. By generalizing the concept of effective ion temperature to include the effects of inelastic ion-molecular collisions, we have been able to condense peak position dependence on separation field and temperature to dependence on a redefined effective temperature including a smoothly varying inelasticity correction. It allows prediction and correction of the gas temperature effect on DMS peak positions.

Voltage Dependence of Supercapacitor Capacitance

Directory of Open Access Journals (Sweden)

Szewczyk Arkadiusz

2016-09-01

Full Text Available Electronic Double-Layer Capacitors (EDLC, called Supercapacitors (SC, are electronic devices that are capable to store a relatively high amount of energy in a small volume comparing to other types of capacitors. They are composed of an activated carbon layer and electrolyte solution. The charge is stored on electrodes, forming the Helmholtz layer, and in electrolyte. The capacitance of supercapacitor is voltage- dependent. We propose an experimental method, based on monitoring of charging and discharging a supercapacitor, which enables to evaluate the charge in an SC structure as well as the Capacitance-Voltage (C-V dependence. The measurement setup, method and experimental results of charging/discharging commercially available supercapacitors in various voltage and current conditions are presented. The total charge stored in an SC structure is proportional to the square of voltage at SC electrodes while the charge on electrodes increases linearly with the voltage on SC electrodes. The Helmholtz capacitance increases linearly with the voltage bias while a sublinear increase of total capacitance was found. The voltage on SC increases after the discharge of electrodes due to diffusion of charges from the electrolyte to the electrodes. We have found that the recovery voltage value is linearly proportional to the initial bias voltage value.

Observation of Sinusoidal Voltage Behaviour in Silver Doped YBCO

Science.gov (United States)

Altinkok, Atilgan; Olutas, Murat; Kilic, Kivilcim; Kilic, Atilla

The influence of bi-directional square wave (BSW) current was investigated on the evolution of the V - t curves at different periods (P) , temperatures and external magnetic fields. It was observed that slow transport relaxation measurements result in regular sinusoidal voltage oscillations which were discussed mainly in terms of the dynamic competition between pinning and depinning.The symmetry in the voltage oscillations was attributed to the elastic coupling between the flux lines and the pinning centers along grain boundaries and partly inside the grains. This case was also correlated to the equality between flux entry and exit along the YBCO/Ag sample during regular oscillations. It was shown that the voltage oscillations can be described well by an empirical expression V (t) sin(wt + φ) . We found that the phase angle φgenerally takes different values for the repetitive oscillations. Fast Fourier Transform analysis of the V - t oscillations showed that the oscillation period is comparable to that (PI) of the BSW current. This finding suggests a physical mechanism associated with charge density waves (CDWs), and, indeed, the weakly pinned flux line system in YBCO/Ag resembles the general behavior of CDWs. At certain values of PI, amplitude of BSW current, H and T, the YBCO/Ag sample behaves like a double-integrator, since it converts the BSW current to sinusoidal voltage oscillations in time.

Replacement divider plate performance under LOCA loading

International Nuclear Information System (INIS)

Huynk, H.M.; MClellan, G.H.; Schneider, W.G.

1997-01-01

A primary divider plate in a nuclear steam generator is required to perform its partitioning function with a minimum of cross leakage, without degradation in operating performance and without loss of structural integrity resulting from normal and accident loading. The design of the replacement divider plate for normal operating conditions is discussed in some detail in reference 1 and 2. This paper describes the structural response of the replacement divider plate to the severe loading resulting from a burst primary pipe. The loads for which the divider plate structural performance must be evaluated are mild to severe differential pressure transients resulting from several postulated sizes and types of pipe break scenarios. In the unlikely event of a severe Loss of Coolant Accident (LOCA) the divider plate or parts thereof must not exit the steam generator nor completely block the outlet nozzle. For the milder LOCA loads, the integrity of the divider plate and seat bars must be maintained. Analysis for the milder LOCA loads was carried out employing a conservative approach which ignores the actual interaction between the structure and the primary fluid. For these load cases it was shown that the divider plate does not become disengaged from the seat bars. For the more severe pipe breaks, the thermal-hydraulic analysis was coupled iteratively with the structural analysis, thereby taking into account divider plate deformation, in order to obtain a better prediction of the behaviour of the divider plate. In this manner substantial reduction in divider plate response to the more severe LOCA loading was achieved. It has been shown that, for the case of a postulated large LOCA (100% reactor inlet header), the disengagement of the divider plate from the seat bars resulted in an opening smaller than 1% of the divider plate area. (author)

A method to stabilize the temperature dependent performance of G-APD arrays

Energy Technology Data Exchange (ETDEWEB)

Huh, Yoonsuk [Molecular Imaging Research and Education (MiRe) Laboratory, Department of Electronic Engineering, Sogang University, Seoul (Korea, Republic of); Sungkyunkwan University, School of Medicine, Seoul (Korea, Republic of); Choi, Yong; Ho Jung, Jin; Jung, Jiwoong [Molecular Imaging Research and Education (MiRe) Laboratory, Department of Electronic Engineering, Sogang University, Seoul (Korea, Republic of)

2015-02-01

This paper presents a compensation method to stabilize the temperature dependent performance of Geiger-mode Avalanche Photodiode (G-APD) arrays for Positron Emission Tomography (PET). The compensation method is used to identify the bias voltage range that provides stable performance even at different temperatures using the G-APD’s characteristics, and to control the photo-peak variation as a function of temperature using the preamplifier gain within the identified bias voltage range. A pair of G-APD detectors and temperature sensors were located in the temperature chamber and the preamplifiers which can control the gain of the detectors using the digital potentiometer were positioned outside the chamber. The performance of the G-APD detector, especially energy resolution and coincidence timing resolution, was characterized as a function of bias voltage at different temperatures from 20 °C to 40 °C at 5 °C increments; the energy resolution, coincidence timing resolution, and photo-peak position of all channels of G-APD PET detectors before and after the preamplifier gain correction were then measured and compared. The results of this study demonstrated that the optimal bias voltage range providing the good energy and coincidence timing resolution, 12.1±1.2% and 1.30±0.09 ns, respectively, could be identified at the temperature range and the photo-peak variation and the performance at different temperatures could be stabilized by adjusting the preamplifier gain within the identified bias voltage range. We concluded the proposed method to be reliable and useful for the development of the PET system using G-APD arrays.

Sheath and arc-column voltages in high-pressure arc discharges

International Nuclear Information System (INIS)

Benilov, M S; Benilova, L G; Li Heping; Wu Guiqing

2012-01-01

Electrical characteristics of a 1 cm-long free-burning atmospheric-pressure argon arc are calculated by means of a model taking into account the existence of a near-cathode space-charge sheath and the discrepancy between the electron and heavy-particle temperatures in the arc column. The computed arc voltage exhibits a variation with the arc current I similar to the one revealed by the experiment and exceeds experimental values by no more than approximately 2 V in the current range 20-175 A. The sheath contributes about two-thirds or more of the arc voltage. The LTE model predicts a different variation of the arc voltage with I and underestimates the experimental values appreciably for low currents but by no more than approximately 2 V for I ≳ 120 A. However, the latter can hardly be considered as a proof of unimportance of the space-charge sheath at high currents: the LTE model overestimates both the resistance of the bulk of the arc column and the resistance of the part of the column that is adjacent to the cathode, and this overestimation to a certain extent compensates for the neglect of the voltage drop in the sheath. Furthermore, if the latter resistance were evaluated in the framework of the LTE model in an accurate way, then the overestimation would be still much stronger and the obtained voltage would significantly exceed those observed in the experiment.

Voltage-Sensitive Load Controllers for Voltage Regulation and Increased Load Factor in Distribution Systems

DEFF Research Database (Denmark)

Douglass, Philip James; Garcia-Valle, Rodrigo; Østergaard, Jacob

2014-01-01

This paper presents a novel controller design for controlling appliances based on local measurements of voltage. The controller finds the normalized voltage deviation accounting for the sensitivity of voltage measurements to appliance state. The controller produces a signal indicating desired pow...

A low-power CMOS smart temperature sensor for RFID application

International Nuclear Information System (INIS)

Xie Liangbo; Liu Jiaxin; Wang Yao; Wen Guangjun

2014-01-01

This paper presents the design and implement of a CMOS smart temperature sensor, which consists of a low power analog front-end and a 12-bit low-power successive approximation register (SAR) analog-to-digital converter (ADC). The analog front-end generates a proportional-to-absolute-temperature (PTAT) voltage with MOSFET circuits operating in the sub-threshold region. A reference voltage is also generated and optimized in order to minimize the temperature error and the 12-bit SAR ADC is used to digitize the PTAT voltage. Using 0.18 μm CMOS technology, measurement results show that the temperature error is −0.69/+0.85 °C after one-point calibration over a temperature range of −40 to 100 °C. Under a conversion speed of 1K samples/s, the power consumption is only 2.02 μW while the chip area is 230 × 225 μm 2 , and it is suitable for RFID application. (semiconductor integrated circuits)

Tuning the hysteresis voltage in 2D multilayer MoS{sub 2} FETs

Energy Technology Data Exchange (ETDEWEB)

Jiang, Jie, E-mail: jiangjie@csu.edu.cn; Zheng, Zhouming; Guo, Junjie

2016-10-01

The hysteresis tuning is of great significance before the two-dimensional (2D) molybdenum disulfide (MoS{sub 2}) field-effect transistors (FETs) can be practically used in the next-generation nanoelectronic devices. In this paper, a simple and effective annealing method was developed to tune the hysteresis voltage in 2D MoS{sub 2} transistors. It was found that high temperature (175 °C) annealing in air could increase the hysteresis voltage from 8.0 V (original device) to 28.4 V, while a next vacuum annealing would reduce the hysteresis voltage to be only 2.0 V. An energyband diagram model based on electron trapping/detrapping due to oxygen adsorption is proposed to understand the hysteresis mechanism in multilayer MoS{sub 2} FET. This simple method for tuning the hysteresis voltage of MoS{sub 2} FET can make a significant step toward 2D nanoelectronic device applications.

Online Estimation of Model Parameters and State of Charge of LiFePO4 Batteries Using a Novel Open-Circuit Voltage at Various Ambient Temperatures

Directory of Open Access Journals (Sweden)

Fei Feng

2015-04-01

Full Text Available This study describes an online estimation of the model parameters and state of charge (SOC of lithium iron phosphate batteries in electric vehicles. A widely used SOC estimator is based on the dynamic battery model with predeterminate parameters. However, model parameter variances that follow with their varied operation temperatures can result in errors in estimating battery SOC. To address this problem, a battery online parameter estimator is presented based on an equivalent circuit model using an adaptive joint extended Kalman filter algorithm. Simulations based on actual data are established to verify accuracy and stability in the regression of model parameters. Experiments are also performed to prove that the proposed estimator exhibits good reliability and adaptability under different loading profiles with various temperatures. In addition, open-circuit voltage (OCV is used to estimate SOC in the proposed algorithm. However, the OCV based on the proposed online identification includes a part of concentration polarization and hysteresis, which is defined as parametric identification-based OCV (OCVPI. Considering the temperature factor, a novel OCV–SOC relationship map is established by using OCVPI under various temperatures. Finally, a validating experiment is conducted based on the consecutive loading profiles. Results indicate that our method is effective and adaptable when a battery operates at different ambient temperatures.

Essays on the Digital Divide

Science.gov (United States)

Abdelfattah, Belal M. T.

2013-01-01

The digital divide is a phenomenon that is globally persistent, despite rapidly decreasing costs in technology. While much of the variance in the adoption and use of information communication technology (ICT) that defines the digital divide can be explained by socioeconomic and demographic variables, there is still significant unaccounted variance…

Computational optogenetics: empirically-derived voltage- and light-sensitive channelrhodopsin-2 model.

Directory of Open Access Journals (Sweden)

John C Williams

Full Text Available Channelrhodospin-2 (ChR2, a light-sensitive ion channel, and its variants have emerged as new excitatory optogenetic tools not only in neuroscience, but also in other areas, including cardiac electrophysiology. An accurate quantitative model of ChR2 is necessary for in silico prediction of the response to optical stimulation in realistic tissue/organ settings. Such a model can guide the rational design of new ion channel functionality tailored to different cell types/tissues. Focusing on one of the most widely used ChR2 mutants (H134R with enhanced current, we collected a comprehensive experimental data set of the response of this ion channel to different irradiances and voltages, and used these data to develop a model of ChR2 with empirically-derived voltage- and irradiance- dependence, where parameters were fine-tuned via simulated annealing optimization. This ChR2 model offers: 1 accurate inward rectification in the current-voltage response across irradiances; 2 empirically-derived voltage- and light-dependent kinetics (activation, deactivation and recovery from inactivation; and 3 accurate amplitude and morphology of the response across voltage and irradiance settings. Temperature-scaling factors (Q10 were derived and model kinetics was adjusted to physiological temperatures. Using optical action potential clamp, we experimentally validated model-predicted ChR2 behavior in guinea pig ventricular myocytes. The model was then incorporated in a variety of cardiac myocytes, including human ventricular, atrial and Purkinje cell models. We demonstrate the ability of ChR2 to trigger action potentials in human cardiomyocytes at relatively low light levels, as well as the differential response of these cells to light, with the Purkinje cells being most easily excitable and ventricular cells requiring the highest irradiance at all pulse durations. This new experimentally-validated ChR2 model will facilitate virtual experimentation in neural and

Ripple reduction activities in the MG room at the Bevatron, August 1991 to August 1992

International Nuclear Information System (INIS)

Blasbalg, M.; Bennett, M.

1992-08-01

This report discusses the following topics: magnet - voltage dividers temperature ampersand voltage influence error calculation; magnet filters summarized data table; magnet transfer function measurement setup and connection diagrams; response of existing magnet system including ripple reduction filters - Dec 1991; magnet filters - mutual inductance problem; and damping the magnet filters

The high voltage system for the novel MPGD-based photon detectors of COMPASS RICH-1

CERN Document Server

Dalla Torre, S.; Birsa, R.; Bradamante, F.; Bressan, A.; Chatterjee, C.; Ciliberti, P.; Dasgupta, S.; Gobbo, B.; Gregori, M.; Hamar, G.; Levorato, S.; Martin, A.; Menon, G.; Tessarotto, F.; Zhao, Y.

2018-01-01

The architecture of the novel MPGD-based photon detectors of COMPASS RICH-1 consists in a large-size hybrid MPGD multilayer layout combining two layers of Thick-GEMs and a bulk resistive MICROMEGAS. Concerning biasing voltage, the Thick-GEMs are segmented in order to reduce the energy released in case of occasional discharges, while the MICROMEGAS anode is segmented in pads individually biased at positive voltage, while the micromesh is grounded. In total, there are ten different electrode types and more than 20000 electrodes supplied by more than 100 HV channels. Commercial power supply units are used. The original elements of the power supply system are the architecture of the voltage distribution net, the compensation, by voltage adjustment, of the effects of pressure and temperature variation affecting the detector gain and a sophisticated control software, which allows to protect the detectors against errors by the operator, to monitor and log voltages and current at 1 Hz rate and to automatically react ...

Symmetric voltage-controlled variable resistance

Science.gov (United States)

Vanelli, J. C.

1978-01-01

Feedback network makes resistance of field-effect transistor (FET) same for current flowing in either direction. It combines control voltage with source and load voltages to give symmetric current/voltage characteristics. Since circuit produces same magnitude output voltage for current flowing in either direction, it introduces no offset in presense of altering polarity signals. It is therefore ideal for sensor and effector circuits in servocontrol systems.

Exploration of genetically encoded voltage indicators based on a chimeric voltage sensing domain

Directory of Open Access Journals (Sweden)

Yukiko eMishina

2014-09-01

Full Text Available Deciphering how the brain generates cognitive function from patterns of electrical signals is one of the ultimate challenges in neuroscience. To this end, it would be highly desirable to monitor the activities of very large numbers of neurons while an animal engages in complex behaviours. Optical imaging of electrical activity using genetically encoded voltage indicators (GEVIs has the potential to meet this challenge. Currently prevalent GEVIs are based on the voltage-sensitive fluorescent protein (VSFP prototypical design or on the voltage dependent state transitions of microbial opsins.We recently introduced a new VSFP design in which the voltage-sensing domain (VSD is sandwiched between a FRET pair of fluorescent proteins (termed VSFP-Butterflies and also demonstrated a series of chimeric VSD in which portions of the VSD of Ciona intestinalis voltage-sensitive phosphatase (Ci-VSP are substituted by homologous portions of a voltage-gated potassium channel subunit. These chimeric VSD had faster sensing kinetics than that of the native Ci-VSD. Here, we describe a new set of VSFPs that combine chimeric VSD with the Butterfly structure. We show that these chimeric VSFP-Butterflies can report membrane voltage oscillations of up to 200 Hz in cultured cells and report sensory evoked cortical population responses in living mice. This class of GEVIs may be suitable for imaging of brain rhythms in behaving mammalians.

Exploration of genetically encoded voltage indicators based on a chimeric voltage sensing domain.

Science.gov (United States)

Mishina, Yukiko; Mutoh, Hiroki; Song, Chenchen; Knöpfel, Thomas

2014-01-01

Deciphering how the brain generates cognitive function from patterns of electrical signals is one of the ultimate challenges in neuroscience. To this end, it would be highly desirable to monitor the activities of very large numbers of neurons while an animal engages in complex behaviors. Optical imaging of electrical activity using genetically encoded voltage indicators (GEVIs) has the potential to meet this challenge. Currently prevalent GEVIs are based on the voltage-sensitive fluorescent protein (VSFP) prototypical design or on the voltage-dependent state transitions of microbial opsins. We recently introduced a new VSFP design in which the voltage-sensing domain (VSD) is sandwiched between a fluorescence resonance energy transfer pair of fluorescent proteins (termed VSFP-Butterflies) and also demonstrated a series of chimeric VSD in which portions of the VSD of Ciona intestinalis voltage-sensitive phosphatase are substituted by homologous portions of a voltage-gated potassium channel subunit. These chimeric VSD had faster sensing kinetics than that of the native Ci-VSD. Here, we describe a new set of VSFPs that combine chimeric VSD with the Butterfly structure. We show that these chimeric VSFP-Butterflies can report membrane voltage oscillations of up to 200 Hz in cultured cells and report sensory evoked cortical population responses in living mice. This class of GEVIs may be suitable for imaging of brain rhythms in behaving mammalians.

Connection for transfer of Liquid Nitrogen from High Voltage to ground potential

DEFF Research Database (Denmark)

Rasmussen, Claus Nygaard; Hansen, Finn; Willén, Dag

2001-01-01

In order to operate a superconducting cable conductor it must be kept at a cryogenic temperature (e.g. using liquid nitrogen). The superconducting cable conductor is at high voltage and the cooling equipment is kept at ground potential. This requires a thermally insulating connection that is also...... properties and withstand towards high-pressure liquid nitrogen. The length per joint is approximately 900 mm, including a Johnstoncoupling. The joints are tested in a closed liquid nitrogen circuit, with a pressure of up to 10 bars. The rated voltage of the cable system is 36 kV (phase-phase)....

Bifurcation in asymmetric plasma divided by a magnetic filter

International Nuclear Information System (INIS)

Ohi, K.; Naitou, H.; Tauchi, Y.; Fukumasa, O.

2001-05-01

A magnetic filter (MF) reflecting electrons from both sides can separate a low-temperature and low-density subplasma from a high-temperature and high-density main plasma. The one-dimensional numerical simulation by the particle-in-cell code revealed that, depending on the asymmetry, the plasma divided by the MF behaves dynamically or statically [K. Ohi et al., Physics of Plasmas 8, 23 (2001)]. The transition between the two bifurcated states is discontinuous. In the dynamic state, the autonomous potential oscillation in the subplasma is synchronized with the passage of the shock wave structure generated by the modulated ion beam from the main plasma. The stationary phase of the dynamic state appears after the amplitude of the potential oscillation in the subplasma grows exponentially from the thermal noise. In the static state, the system is stable to the growth of the potential oscillation in the subplasma. (author)

Compact Unequal Power Divider with Filtering Response

Directory of Open Access Journals (Sweden)

Wei-Qiang Pan

2015-01-01

Full Text Available We present a novel unequal power divider with bandpass responses. The proposed power divider consists of five resonators and a resistor. The power division ratio is controlled by altering the coupling strength among the resonators. The output ports have the characteristic impedance of 50 Ω and impedance transformers in classical Wilkinson power dividers are not required in this design. Use of resonators enables the filtering function of the power divider. Two transmission zeros are generated near the passband edges, resulting in quasielliptic bandpass responses. For validation, a 2 : 1 filtering power divider is implemented. The fabricated circuit size is 0.22 λg × 0.08 λg, featuring compact size for unequal filtering power dividers, which is suitable for the feeding networks of antenna arrays.

Dividing Attention Increases Operational Momentum

Directory of Open Access Journals (Sweden)

Koleen McCrink

2017-12-01

Full Text Available When adding or subtracting two quantities, adults often compute an estimated outcome that is larger or smaller, respectively, than the actual outcome, a bias referred to as “operational momentum”. The effects of attention on operational momentum were investigated. Participants viewed a display in which two arrays of objects were added, or one array was subtracted from another array, and judged whether a subsequent outcome (probe array contained the correct or incorrect number of objects. In a baseline condition, only the arrays to be added or subtracted were viewed. In divided attention conditions, participants simultaneously viewed a sequence of colors or shapes, and judged which color (a non-spatial judgment or shape (a spatial judgment was repeated. Operational momentum occurred in all conditions, but was higher in divided attention conditions than in the baseline condition, primarily for addition problems. This pattern suggests that dividing attention, rather than decreasing operational momentum by decreasing attentional shifts, actually increased operational momentum. These results are consistent with a heightened use of arithmetic heuristics under conditions of divided attention.

Development of a Novel Bidirectional DC/DC Converter Topology with High Voltage Conversion Ratio for Electric Vehicles and DC-Microgrids

Directory of Open Access Journals (Sweden)

Ching-Ming Lai

2016-05-01

Full Text Available The main objective of this paper was to study a bidirectional direct current to direct current converter (BDC topology with a high voltage conversion ratio for electric vehicle (EV batteries connected to a dc-microgrid system. In this study, an unregulated level converter (ULC cascaded with a two-phase interleaved buck-boost charge-pump converter (IBCPC is introduced to achieve a high conversion ratio with a simpler control circuit. In discharge state, the topology acts as a two-stage voltage-doubler boost converter to achieve high step-up conversion ratio (48 V to 385 V. In charge state, the converter acts as two cascaded voltage-divider buck converters to achieve high voltage step-down conversion ratio (385 V to 48 V. The features, operation principles, steady-state analysis, simulation and experimental results are made to verify the performance of the studied novel BDC. Finally, a 500 W rating prototype system is constructed for verifying the validity of the operation principle. Experimental results show that highest efficiencies of 96% and 95% can be achieved, respectively, in charge and discharge states.

High-Field Quench Behavior and Protection of $Bi_2 Sr_2 Ca Cu_2 O_x$ Coils: Minimum and Maximum Quench Detection Voltages

Energy Technology Data Exchange (ETDEWEB)

Shen, Tengming [Fermilab; Ye, Liyang [NCSU, Raleigh; Turrioni, Daniele [Fermilab; Li, Pei [Fermilab

2015-01-01

Small insert coils have been built using a multifilamentary Bi2Sr2CaCu2Ox round wire, and characterized in background fields to explore the quench behaviors and limits of Bi2Sr2CaCu2Ox superconducting magnets, with an emphasis on assessing the impact of slow normal zone propagation on quench detection. Using heaters of various lengths to initiate a small normal zone, a coil was quenched safely more than 70 times without degradation, with the maximum coil temperature reaching 280 K. Coils withstood a resistive voltage of tens of mV for seconds without quenching, showing the high stability of these coils and suggesting that the quench detection voltage shall be greater than 50 mV to not to falsely trigger protection. The hot spot temperature for the resistive voltage of the normal zone to reach 100 mV increases from ~40 K to ~80 K with increasing the operating wire current density Jo from 89 A/mm2 to 354 A/mm2 whereas for the voltage to reach 1 V, it increases from ~60 K to ~140 K, showing the increasing negative impact of slow normal zone propagation on quench detection with increasing Jo and the need to limit the quench detection voltage to < 1 V. These measurements, coupled with an analytical quench model, were used to access the impact of the maximum allowable voltage and temperature upon quench detection on the quench protection, assuming to limit the hot spot temperature to <300 K.

A dynamic voltage restorer (DVR) with selective harmonic compensation at medium voltage level

DEFF Research Database (Denmark)

Newman, M.J.; Holmes, D.G.; Nielsen, J.G.

2005-01-01

Dynamic voltage restorers (DVRs) are now becoming more established in industry to reduce the impact of voltage sags to sensitive loads. However, DVRs spend most of their time in standby mode, since voltage sags occur very infrequently, and hence their utilization is low. In principle, it would...... be advantageous if the series-connected inverter of a DVR could also be used to compensate for any steady-state load voltage harmonics, since this would increase the power quality "value-added" benefits to the grid system. However, before this can be done, consideration must be given to the control of steady......-state power through the DVR, the increased losses, and the low modulation depths at which the scheme must operate to achieve acceptable harmonic compensation performance. This paper presents a selective harmonic feedback control strategy that can be easily added to medium-voltage DVR systems to provide...

Development of a new lower hybrid antenna module using a poloidal power divider

International Nuclear Information System (INIS)

Maebara, Sunao; Seki, Masami; Suganuma, Kazuaki

1996-07-01

The antenna using poloidal power divider is an effective method for simplification of Lower Hybrid Current Drive (LHCD) antenna system. This method should allow to reduce the power density in the antenna while maintaining a good flexibility of N parallel spectrum of waves. For this purpose, three types of poloidal power divider which split the power in three, and the 3 x 6 multi-junction module were developed. r.f. properties and outgassing of these components were evaluated using the CEA Cadarache RF Test Facility. A good power dividing ratio of 33 ± 4% was obtained for each of these poloidal dividers, and the reflection coefficient was lower value than 1.5%. For the 3 x 6 multi-junction, reflection coefficient was less than 1.3% and r.f. losses lower than 1.0% were measured. On the other hand, it was found in the scattering matrix analysis that reflection coefficient at plasma has to be less than a few % in order to operate these components under available conditions. In combination with two poloidal power dividers connected to the 3 x 6 multi-junction module, quasi stationary operation for r.f. injection time of 1000 sec at 300 kW was demonstrated under water cooling. In this case, it was found that the outgassing rate is in the lower range of 10 -7 Pam 3 s -1 m -2 within the maximum module temperature of ∼100degC. This report describes the experimental and analytical results of a new lower hybrid (LH) antenna module using the poloidal power divider. (author)

Molecular pathophysiology and pharmacology of the voltage-sensing module of neuronal ion channels.

Science.gov (United States)

Miceli, Francesco; Soldovieri, Maria Virginia; Ambrosino, Paolo; De Maria, Michela; Manocchio, Laura; Medoro, Alessandro; Taglialatela, Maurizio

2015-01-01

Voltage-gated ion channels (VGICs) are membrane proteins that switch from a closed to open state in response to changes in membrane potential, thus enabling ion fluxes across the cell membranes. The mechanism that regulate the structural rearrangements occurring in VGICs in response to changes in membrane potential still remains one of the most challenging topic of modern biophysics. Na(+), Ca(2+) and K(+) voltage-gated channels are structurally formed by the assembly of four similar domains, each comprising six transmembrane segments. Each domain can be divided into two main regions: the Pore Module (PM) and the Voltage-Sensing Module (VSM). The PM (helices S5 and S6 and intervening linker) is responsible for gate opening and ion selectivity; by contrast, the VSM, comprising the first four transmembrane helices (S1-S4), undergoes the first conformational changes in response to membrane voltage variations. In particular, the S4 segment of each domain, which contains several positively charged residues interspersed with hydrophobic amino acids, is located within the membrane electric field and plays an essential role in voltage sensing. In neurons, specific gating properties of each channel subtype underlie a variety of biological events, ranging from the generation and propagation of electrical impulses, to the secretion of neurotransmitters and to the regulation of gene expression. Given the important functional role played by the VSM in neuronal VGICs, it is not surprising that various VSM mutations affecting the gating process of these channels are responsible for human diseases, and that compounds acting on the VSM have emerged as important investigational tools with great therapeutic potential. In the present review we will briefly describe the most recent discoveries concerning how the VSM exerts its function, how genetically inherited diseases caused by mutations occurring in the VSM affects gating in VGICs, and how several classes of drugs and toxins

Genetically encoded fluorescent voltage sensors using the voltage-sensing domain of Nematostella and Danio phosphatases exhibit fast kinetics.

Science.gov (United States)

Baker, Bradley J; Jin, Lei; Han, Zhou; Cohen, Lawrence B; Popovic, Marko; Platisa, Jelena; Pieribone, Vincent

2012-07-15

A substantial increase in the speed of the optical response of genetically encoded fluorescent protein voltage sensors (FP voltage sensors) was achieved by using the voltage-sensing phosphatase genes of Nematostella vectensis and Danio rerio. A potential N. vectensis voltage-sensing phosphatase was identified in silico. The voltage-sensing domain (S1-S4) of the N. vectensis homolog was used to create an FP voltage sensor called Nema. By replacing the phosphatase with a cerulean/citrine FRET pair, a new FP voltage sensor was synthesized with fast off kinetics (Tau(off)voltage-sensing phosphatase homolog, designated Zahra and Zahra 2, exhibited fast on and off kinetics within 2ms of the time constants observed with the organic voltage-sensitive dye, di4-ANEPPS. Mutagenesis of the S4 region of the Danio FP voltage sensor shifted the voltage dependence to more negative potentials but did not noticeably affect the kinetics of the optical signal. Copyright © 2012 Elsevier B.V. All rights reserved.

Genetically-encoded fluorescent voltage sensors using the voltage-sensing domain of Nematostella and Danio phosphatases exhibit fast kinetics

Science.gov (United States)

Baker, Bradley J.; Jin, Lei; Han, Zhou; Cohen, Lawrence B.; Popovic, Marko; Platisa, Jelena; Pieribone, Vincent

2012-01-01

A substantial increase in the speed of the optical response of genetically-encoded Fluorescent Protein voltage sensors (FP voltage sensors) was achieved by using the voltage-sensing phosphatase genes of Nematostella vectensis and Danio rerio. A potential N. vectensis voltage-sensing phosphatase was identified in silico. The voltage-sensing domain (S1–S4) of the N. vectensis homolog was used to create an FP voltage sensor called Nema. By replacing the phosphatase with a cerulean/citrine FRET pair, a new FP voltage sensor was synthesized with fast off kinetics (Tauoff voltage-sensing phosphatase homolog, designated Zahra and Zahra 2, exhibited fast on and off kinetics within 2 msec of the time constants observed with the organic voltage-sensitive dye, di4-ANEPPS. Mutagenesis of the S4 region of the Danio FP voltage sensor shifted the voltage dependence to more negative potentials but did not noticeably affect the kinetics of the optical signal. PMID:22634212

Sensing voltage across lipid membranes

Science.gov (United States)

Swartz, Kenton J.

2009-01-01

The detection of electrical potentials across lipid bilayers by specialized membrane proteins is required for many fundamental cellular processes such as the generation and propagation of nerve impulses. These membrane proteins possess modular voltage-sensing domains, a notable example being the S1-S4 domains of voltage-activated ion channels. Ground-breaking structural studies on these domains explain how voltage sensors are designed and reveal important interactions with the surrounding lipid membrane. Although further structures are needed to fully understand the conformational changes that occur during voltage sensing, the available data help to frame several key concepts that are fundamental to the mechanism of voltage sensing. PMID:19092925

A voltage biased superconducting quantum interference device bootstrap circuit

International Nuclear Information System (INIS)

Xie Xiaoming; Wang Huiwu; Wang Yongliang; Dong Hui; Jiang Mianheng; Zhang Yi; Krause, Hans-Joachim; Braginski, Alex I; Offenhaeusser, Andreas; Mueck, Michael

2010-01-01

We present a dc superconducting quantum interference device (SQUID) readout circuit operating in the voltage bias mode and called a SQUID bootstrap circuit (SBC). The SBC is an alternative implementation of two existing methods for suppression of room-temperature amplifier noise: additional voltage feedback and current feedback. Two circuit branches are connected in parallel. In the dc SQUID branch, an inductively coupled coil connected in series provides the bias current feedback for enhancing the flux-to-current coefficient. The circuit branch parallel to the dc SQUID branch contains an inductively coupled voltage feedback coil with a shunt resistor in series for suppressing the preamplifier noise current by increasing the dynamic resistance. We show that the SBC effectively reduces the preamplifier noise to below the SQUID intrinsic noise. For a helium-cooled planar SQUID magnetometer with a SQUID inductance of 350 pH, a flux noise of about 3 μΦ 0 Hz -1/2 and a magnetic field resolution of less than 3 fT Hz -1/2 were obtained. The SBC leads to a convenient direct readout electronics for a dc SQUID with a wider adjustment tolerance than other feedback schemes.

Nonequilibrium segregation and phase instability in alloy films during elevated-temperature irradiation in a high-voltage electron microscope

Science.gov (United States)

Lam, N. Q.; Okamoto, P. R.

1984-05-01

The effects of defect-production rate gradients, caused by the radial nonuniformity in the electron flux distribution, on solute segregation and phase stability in alloy films undergoing high-voltage electron-microscope (HVEM) irradiation at high temperatures are assessed. Two-dimensional (axially symmetric) compositional redistributions were calculated, taking into account both axial and transverse radial defect fluxes. It was found that when highly focused beams were employed radiation-induced segregation consisted of two stages: dominant axial segregation at the film surfaces at short irradiation times and competitive radial segregation at longer times. The average alloy composition within the irradiated region could differ greatly from that irradiated with a uniform beam, because of the additional atom transport from or to the region surrounding the irradiated zone under the influence of radial fluxes. Damage-rate gradient effects must be taken into account when interpreting in-situ HVEM observations of segregation-induced phase instabilities. The theoretical predictions are compared with experimental observations of the temporal and spatial dependence of segregation-induced precipitation in thin films of Ni-Al, Ni-Ge and Ni-Si solid solutions.

76 FR 72203 - Voltage Coordination on High Voltage Grids; Notice of Reliability Workshop Agenda

Science.gov (United States)

2011-11-22

... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Docket No. AD12-5-000] Voltage Coordination on High Voltage Grids; Notice of Reliability Workshop Agenda As announced in the Notice of Staff..., from 9 a.m. to 4:30 p.m. to explore the interaction between voltage control, reliability, and economic...

Uncertainly Analysis of Two Types of Humidity Sensors by a Humidity Generator with a Divided-Flow System

Science.gov (United States)

Chen, Ling-Hsi

2018-01-01

Humidity measurement is an important technique for the agricultural, foods, pharmaceuticals, and chemical industries. For the sake of convenience, electrical relative humidity (RH) sensors have been widely used. These sensors need to be calibrated to ensure their accuracy and the uncertainty measurement of these sensors has become a major concern. In this study, a self-made divided-flow generator was established to calibrate two types of electrical humidity sensors. The standard reference humidity was calculated from dew-point temperature and air dry-bulb temperature measured by a chilled mirror monitor. This divided-flow generator could produce consistent result of RH measurement results. The uncertainty of the reference standard increased with the increase of RH values. The combined uncertainty with the adequate calibration equations were ranged from 0.82% to 1.45% RH for resistive humidity sensors and 0.63% to 1.4% for capacitive humidity sensors, respectively. This self-made, divided-flow generator, and calibration method are cheap, time-saving, and easy to be used. Thus, the proposed approach can easily be applied in research laboratories. PMID:29466313

Uncertainly Analysis of Two Types of Humidity Sensors by a Humidity Generator with a Divided-Flow System.

Science.gov (United States)

Chen, Ling-Hsi; Chen, Chiachung

2018-02-21

Humidity measurement is an important technique for the agricultural, foods, pharmaceuticals, and chemical industries. For the sake of convenience, electrical relative humidity (RH) sensors have been widely used. These sensors need to be calibrated to ensure their accuracy and the uncertainty measurement of these sensors has become a major concern. In this study, a self-made divided-flow generator was established to calibrate two types of electrical humidity sensors. The standard reference humidity was calculated from dew-point temperature and air dry-bulb temperature measured by a chilled mirror monitor. This divided-flow generator could produce consistent result of RH measurement results. The uncertainty of the reference standard increased with the increase of RH values. The combined uncertainty with the adequate calibration equations were ranged from 0.82% to 1.45% RH for resistive humidity sensors and 0.63% to 1.4% for capacitive humidity sensors, respectively. This self-made, divided-flow generator, and calibration method are cheap, time-saving, and easy to be used. Thus, the proposed approach can easily be applied in research laboratories.

Voltage-dependent motion of the catalytic region of voltage-sensing phosphatase monitored by a fluorescent amino acid.

Science.gov (United States)

Sakata, Souhei; Jinno, Yuka; Kawanabe, Akira; Okamura, Yasushi

2016-07-05

The cytoplasmic region of voltage-sensing phosphatase (VSP) derives the voltage dependence of its catalytic activity from coupling to a voltage sensor homologous to that of voltage-gated ion channels. To assess the conformational changes in the cytoplasmic region upon activation of the voltage sensor, we genetically incorporated a fluorescent unnatural amino acid, 3-(6-acetylnaphthalen-2-ylamino)-2-aminopropanoic acid (Anap), into the catalytic region of Ciona intestinalis VSP (Ci-VSP). Measurements of Anap fluorescence under voltage clamp in Xenopus oocytes revealed that the catalytic region assumes distinct conformations dependent on the degree of voltage-sensor activation. FRET analysis showed that the catalytic region remains situated beneath the plasma membrane, irrespective of the voltage level. Moreover, Anap fluorescence from a membrane-facing loop in the C2 domain showed a pattern reflecting substrate turnover. These results indicate that the voltage sensor regulates Ci-VSP catalytic activity by causing conformational changes in the entire catalytic region, without changing their distance from the plasma membrane.

Voltage-dependent motion of the catalytic region of voltage-sensing phosphatase monitored by a fluorescent amino acid

Science.gov (United States)

Sakata, Souhei; Jinno, Yuka; Kawanabe, Akira; Okamura, Yasushi

2016-01-01

The cytoplasmic region of voltage-sensing phosphatase (VSP) derives the voltage dependence of its catalytic activity from coupling to a voltage sensor homologous to that of voltage-gated ion channels. To assess the conformational changes in the cytoplasmic region upon activation of the voltage sensor, we genetically incorporated a fluorescent unnatural amino acid, 3-(6-acetylnaphthalen-2-ylamino)-2-aminopropanoic acid (Anap), into the catalytic region of Ciona intestinalis VSP (Ci-VSP). Measurements of Anap fluorescence under voltage clamp in Xenopus oocytes revealed that the catalytic region assumes distinct conformations dependent on the degree of voltage-sensor activation. FRET analysis showed that the catalytic region remains situated beneath the plasma membrane, irrespective of the voltage level. Moreover, Anap fluorescence from a membrane-facing loop in the C2 domain showed a pattern reflecting substrate turnover. These results indicate that the voltage sensor regulates Ci-VSP catalytic activity by causing conformational changes in the entire catalytic region, without changing their distance from the plasma membrane. PMID:27330112

Temperature analysis with voltage-current time differential operation of electrochemical sensors

Energy Technology Data Exchange (ETDEWEB)

Woo, Leta Yar-Li; Glass, Robert Scott; Fitzpatrick, Joseph Jay; Wang, Gangqiang; Henderson, Brett Tamatea; Lourdhusamy, Anthoniraj; Steppan, James John; Allmendinger, Klaus Karl

2018-01-02

A method for temperature analysis of a gas stream. The method includes identifying a temperature parameter of an affected waveform signal. The method also includes calculating a change in the temperature parameter by comparing the affected waveform signal with an original waveform signal. The method also includes generating a value from the calculated change which corresponds to the temperature of the gas stream.

Online junction temperature measurement using peak gate current

DEFF Research Database (Denmark)

Baker, Nick; Munk-Nielsen, Stig; Iannuzzo, Francesco

2015-01-01

A new method for junction temperature measurement of MOS-gated power semiconductor switches is presented. The measurement method involves detecting the peak voltage over the external gate resistor of an IGBT or MOSFET during turn-on. This voltage is directly proportional to the peak gate current...

Dimerization of the voltage-sensing phosphatase controls its voltage-sensing and catalytic activity.

Science.gov (United States)

Rayaprolu, Vamseedhar; Royal, Perrine; Stengel, Karen; Sandoz, Guillaume; Kohout, Susy C

2018-05-07

Multimerization is a key characteristic of most voltage-sensing proteins. The main exception was thought to be the Ciona intestinalis voltage-sensing phosphatase (Ci-VSP). In this study, we show that multimerization is also critical for Ci-VSP function. Using coimmunoprecipitation and single-molecule pull-down, we find that Ci-VSP stoichiometry is flexible. It exists as both monomers and dimers, with dimers favored at higher concentrations. We show strong dimerization via the voltage-sensing domain (VSD) and weak dimerization via the phosphatase domain. Using voltage-clamp fluorometry, we also find that VSDs cooperate to lower the voltage dependence of activation, thus favoring the activation of Ci-VSP. Finally, using activity assays, we find that dimerization alters Ci-VSP substrate specificity such that only dimeric Ci-VSP is able to dephosphorylate the 3-phosphate from PI(3,4,5)P 3 or PI(3,4)P 2 Our results indicate that dimerization plays a significant role in Ci-VSP function. © 2018 Rayaprolu et al.

Ultra Low-Voltage Energy Harvesting

Science.gov (United States)

2013-09-01

if in a solar battery charger the level of illumination were to drop due to cloud cover, the diode would prevent discharging of the battery when...the source voltage becomes lower than battery voltage. The drawback of a simple circuit like this is that once the source voltage is lower than the...longer charged when the battery voltage is above the OV setting. Figure 13. Block diagram of BQ25504 circuit . (From [10]) 18 THIS PAGE

Fast frequency divider circuit using combinational logic

Science.gov (United States)

Helinski, Ryan

2017-05-30

The various technologies presented herein relate to performing on-chip frequency division of an operating frequency of a ring oscillator (RO). Per the various embodiments herein, a conflict between RO size versus operational frequency can be addressed by dividing the output frequency of the RO to a frequency that can be measured on-chip. A frequency divider circuit (comprising NOR gates and latches, for example) can be utilized in conjunction with the RO on the chip. In an embodiment, the frequency divider circuit can include a pair of latches coupled to the RO to facilitate dividing the oscillating frequency of the RO by 2. In another embodiment, the frequency divider circuit can include four latches (operating in pairs) coupled to the RO to facilitate dividing the oscillating frequency of the RO by 4. A plurality of ROs can be MUXed to the plurality of ROs by a single oscillation-counting circuit.

Evaluation of the Voltage Support Strategies for the Low Voltage Grid Connected PV

DEFF Research Database (Denmark)

Demirok, Erhan; Sera, Dezso; Teodorescu, Remus

2010-01-01

Admissible range of grid voltage is one of the strictest constraints for the penetration of distributed photovoltaic (PV) generators especially connection to low voltage (LV) public networks. Voltage limits are usually fulfilled either by network reinforcements or limiting of power injections from...... PVs. In order to increase PV penetration level further, new voltage support control functions for individual inverters are required. This paper investigates distributed reactive power regulation and active power curtailment strategies regarding the development of PV connection capacity by evaluation...... of reactive power efforts and requirement of minimum active power curtailment. Furthermore, a small scale experimental setup is built to reflect real grid interaction in the laboratory by achieving critical types of grid (weak and sufficiently stiff)....

Modulating the Voltage-sensitivity of a Genetically Encoded Voltage Indicator.

Science.gov (United States)

Jung, Arong; Rajakumar, Dhanarajan; Yoon, Bong-June; Baker, Bradley J

2017-10-01

Saturation mutagenesis was performed on a single position in the voltage-sensing domain (VSD) of a genetically encoded voltage indicator (GEVI). The VSD consists of four transmembrane helixes designated S1-S4. The V220 position located near the plasma membrane/extracellular interface had previously been shown to affect the voltage range of the optical signal. Introduction of polar amino acids at this position reduced the voltage-dependent optical signal of the GEVI. Negatively charged amino acids slightly reduced the optical signal by 33 percent while positively charge amino acids at this position reduced the optical signal by 80%. Surprisingly, the range of V220D was similar to that of V220K with shifted optical responses towards negative potentials. In contrast, the V220E mutant mirrored the responses of the V220R mutation suggesting that the length of the side chain plays in role in determining the voltage range of the GEVI. Charged mutations at the 219 position all behaved similarly slightly shifting the optical response to more negative potentials. Charged mutations to the 221 position behaved erratically suggesting interactions with the plasma membrane and/or other amino acids in the VSD. Introduction of bulky amino acids at the V220 position increased the range of the optical response to include hyperpolarizing signals. Combining The V220W mutant with the R217Q mutation resulted in a probe that reduced the depolarizing signal and enhanced the hyperpolarizing signal which may lead to GEVIs that only report neuronal inhibition.

Benchmarking of Voltage Sag Generators

DEFF Research Database (Denmark)

Yang, Yongheng; Blaabjerg, Frede; Zou, Zhixiang

2012-01-01

The increased penetration of renewable energy systems, like photovoltaic and wind power systems, rises the concern about the power quality and stability of the utility grid. Some regulations for Low Voltage Ride-Through (LVRT) for medium voltage or high voltage applications, are coming into force...

Low-Voltage Switched-Capacitor Circuits

DEFF Research Database (Denmark)

Bidari, E.; Keskin, M.; Maloberti, F.

1999-01-01

Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications.......Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications....

Bootstrapped Low-Voltage Analog Switches

DEFF Research Database (Denmark)

Steensgaard-Madsen, Jesper

1999-01-01

Novel low-voltage constant-impedance analog switch circuits are proposed. The switch element is a single MOSFET, and constant-impedance operation is obtained using simple circuits to adjust the gate and bulk voltages relative to the switched signal. Low-voltage (1-volt) operation is made feasible...

[Development of residual voltage testing equipment].

Science.gov (United States)

Zeng, Xiaohui; Wu, Mingjun; Cao, Li; He, Jinyi; Deng, Zhensheng

2014-07-01

For the existing measurement methods of residual voltage which can't turn the power off at peak voltage exactly and simultaneously display waveforms, a new residual voltage detection method is put forward in this paper. First, the zero point of the power supply is detected with zero cross detection circuit and is inputted to a single-chip microcomputer in the form of pulse signal. Secend, when the zero point delays to the peak voltage, the single-chip microcomputer sends control signal to power off the relay. At last, the waveform of the residual voltage is displayed on a principal computer or oscilloscope. The experimental results show that the device designed in this paper can turn the power off at peak voltage and is able to accurately display the voltage waveform immediately after power off and the standard deviation of the residual voltage is less than 0.2 V at exactly one second and later.

Investigation of the open-circuit voltage in wide-bandgap InGaP-host InP quantum dot intermediate-band solar cells

Science.gov (United States)

Aihara, Taketo; Tayagaki, Takeshi; Nagato, Yuki; Okano, Yoshinobu; Sugaya, Takeyoshi

2018-04-01

To analyze the open-circuit voltage (V oc) in intermediate-band solar cells, we investigated the current-voltage characteristics in wide-bandgap InGaP-based InP quantum dot (QD) solar cells. From the temperature dependence of the current-voltage curves, we show that the V oc in InP QD solar cells increases with decreasing temperature. We use a simple diode model to extract V oc at the zero-temperature limit, V 0, and the temperature coefficient C of the solar cells. Our results show that, while the C of InP QD solar cells is slightly larger than that of the reference InGaP solar cells, V 0 significantly decreases and coincides with the bandgap energy of the InP QDs rather than that of the InGaP host. This V 0 indicates that the V oc reduction in the InP QD solar cells is primarily caused by the breaking of the Fermi energy separation between the QDs and the host semiconductor in intermediate-band solar cells, rather than by enhanced carrier recombination.

Temperature-dependent performance of all-NbN DC-SQUID magnetometers

Science.gov (United States)

Liu, Quansheng; Wang, Huiwu; Zhang, Qiyu; Wang, Hai; Peng, Wei; Wang, Zhen

2017-05-01

Integrated NbN direct current superconducting quantum interference device (DC-SQUID) magnetometers were developed based on high-quality epitaxial NbN/AlN/NbN Josephson junctions for SQUID applications operating at high temperatures. We report the current-voltage and voltage-flux characteristics and the noise performance of the NbN DC-SQUIDs for temperatures ranging from 4.2 to 9 K. The critical current and voltage swing of the DC-SQUIDs decreased by 15% and 25%, respectively, as the temperature was increased from 4.2 to 9 K. The white flux noise of the DC-SQUID magnetometer at 1 kHz increased from 3.9 μΦ0/Hz1/2 at 4.2 K to 4.8 μΦ0/Hz1/2 at 9 K with 23% increase, corresponding to the magnetic field noise of 6.6 and 8.1 fT/Hz1/2, respectively. The results show that NbN DC-SQUIDs improve the tolerance of the operating temperatures and temperature fluctuations in SQUID applications.

Control Method for DC-Link Voltage Ripple Cancellation in Voltage Source Inverter under Unbalanced Three-Phase Voltage Supply Conditions

Czech Academy of Sciences Publication Activity Database

Chomát, Miroslav; Schreier, Luděk

2005-01-01

Roč. 152, č. 3 (2005), s. 494-500 ISSN 1350-2352 R&D Projects: GA ČR(CZ) GA102/02/0554 Institutional research plan: CEZ:AV0Z20570509 Keywords : DC-link voltage * unbalanced three-phase voltage Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.587, year: 2005

High-voltage scanning ion microscope: Beam optics and design

Energy Technology Data Exchange (ETDEWEB)

Magilin, D., E-mail: dmitrymagilin@gmail.com; Ponomarev, A.; Rebrov, V.; Ponomarov, A.

2015-05-01

This article is devoted to the conceptual design of a compact high-voltage scanning ion microscope (HVSIM). In an HVSIM design, the ion optical system is based on a high-brightness ion source. Specifically, the ion optical system is divided into two components: an ion injector and a probe-forming system (PFS) that consists of an accelerating tube and a multiplet of quadrupole lenses. The crossover is formed and controlled by the injector, which acts as an object collimator, and is focused on the image plane by the PFS. The ion microprobe has a size of 0.1 μm and an energy of 2 MeV. When the influence of the chromatic and third-order aberrations is theoretically taken into account, the HVSIM forms an ion microprobe.

Voltage-driven magnetization control in topological insulator/magnetic insulator heterostructures

Directory of Open Access Journals (Sweden)

Michael E. Flatté

2017-05-01

Full Text Available A major barrier to the development of spin-based electronics is the transition from current-driven spin torque, or magnetic-field-driven magnetization reversal, to a more scalable voltage-driven magnetization reversal. To achieve this, multiferroic materials appear attractive, however the effects in current materials occur at very large voltages or at low temperatures. Here the potential of a new class of hybrid multiferroic materials is described, consisting of a topological insulator adjacent to a magnetic insulator, for which an applied electric field reorients the magnetization. As these materials lack conducting states at the chemical potential in their bulk, no dissipative charge currents flow in the bulk. Surface states at the interface, if present, produce effects similar to surface recombination currents in bipolar devices, but can be passivated using magnetic doping. Even without conducting states at the chemical potential, for a topological insulator there is a finite spin Hall conductivity provided by filled bands below the chemical potential. Spin accumulation at the interface with the magnetic insulator provides a torque on the magnetization. Properly timed voltage pulses can thus reorient the magnetic moment with only the flow of charge current required in the leads to establish the voltage. If the topological insulator is sufficiently thick the resulting low capacitance requires little charge current.

Engineering of a genetically encodable fluorescent voltage sensor exploiting fast Ci-VSP voltage-sensing movements

DEFF Research Database (Denmark)

Lundby, Alicia; Mutoh, Hiroki; Dimitrov, Dimitar

2008-01-01

Ci-VSP contains a voltage-sensing domain (VSD) homologous to that of voltage-gated potassium channels. Using charge displacement ('gating' current) measurements we show that voltage-sensing movements of this VSD can occur within 1 ms in mammalian membranes. Our analysis lead to development...

Research of fuel temperature control in fuel pipeline of diesel engine using positive temperature coefficient material

Directory of Open Access Journals (Sweden)

Xiaolu Li

2016-01-01

Full Text Available As fuel temperature increases, both its viscosity and surface tension decrease, and this is helpful to improve fuel atomization and then better combustion and emission performances of engine. Based on the self-regulated temperature property of positive temperature coefficient material, this article used a positive temperature coefficient material as electric heating element to heat diesel fuel in fuel pipeline of diesel engine. A kind of BaTiO3-based positive temperature coefficient material, with the Curie temperature of 230°C and rated voltage of 24 V, was developed, and its micrograph and element compositions were also analyzed. By the fuel pipeline wrapped in six positive temperature coefficient ceramics, its resistivity–temperature and heating characteristics were tested on a fuel pump bench. The experiments showed that in this installation, the surface temperature of six positive temperature coefficient ceramics rose to the equilibrium temperature only for 100 s at rated voltage. In rated power supply for six positive temperature coefficient ceramics, the temperature of injection fuel improved for 21°C–27°C within 100 s, and then could keep constant. Using positive temperature coefficient material to heat diesel in fuel pipeline of diesel engine, the injection mass per cycle had little change, approximately 0.3%/°C. This study provides a beneficial reference for improving atomization of high-viscosity liquids by employing positive temperature coefficient material without any control methods.

Laser-induced thermoelectric voltage in normal state MgB2 thin films

International Nuclear Information System (INIS)

Zhao Songqing; Zhou Yueliang; Zhao Kun; Wang Shufang; Chen Zhenghao; Jin Kuijuan; Lue Huibin; Cheng Bolin; Yang Guozhen

2006-01-01

Laser-induced voltage has been observed in c-axis oriented MgB 2 thin film at room temperature. The amplitude of the signal is approximately proportional to the film thickness. For the film with the thickness of 150 nm, a very fast response has been detected when the film was irradiated by a 308 nm pulsed laser of 20 ns duration. The rise time and full width at half-maximum of the signal are about 3 and 25 ns, respectively. The physical origin of the laser-induced voltage can be attributed to a transverse thermoelectricity due to the anisotropic thermopower in MgB 2

Gentilly-2 and Point Lepreau divider plate replacement

International Nuclear Information System (INIS)

Schneider, W.; McClellan, G.; Weston, S.

1996-01-01

The steam generators at Hydro Quebec's Gentilly-2 and New Brunswick Power's Point Lepreau Nuclear Plants have been in operation since 1983, and were built with primary divider plates of a bolted panel configuration. During a routine outage inspection at Gentilly-2, it was noted that two bolts had dislodged from the divider plate and were located lying in the primary head. Subsequent inspections revealed erosion damage to a a substantial number of divider plate bolts and to a lesser extent, to the divider plate itself. After further inspection and repair the units were returned to operation, however, it was determined that a permanent replacement of the primary divider plates was going to be necessary. Upon evaluation of various options, it was decided that the panel type divider plates would be replaced with a single piece floating design. The divider plate itself was to be of one piece all-welded arrangement to be constructed from individual panels to be brought in through the manways. In view of the strength limitations of the bolted attachment of the upper seat bar to the tubesheet, a new welded seat was was provided. To counteract erosion concerns, the new divider plate is fitted with erosion resistant inserts of weld buildup and with improved sealing features in order to minimize leakage and erosion. At an advanced stage in the design and manufacture of the components, the issue of divider plate strength during loss of coolant accident (LOCA) conditions came into focus. Analysis was performed to determine the strength and/or failure characteristics of the divider plate to a variety of small and large LOCA conditions. Subsequently, Point Lepreau decided to replace their divider plates to address LOCA concerns. The paper describes the diagnosis of the original divider plates and the design. manufacture, field mobilization, installation and subsequent operation of the replacement divider plates. (author)

Voltage-dependent gating of KCNH potassium channels lacking a covalent link between voltage-sensing and pore domains

Science.gov (United States)

Lörinczi, Éva; Gómez-Posada, Juan Camilo; de La Peña, Pilar; Tomczak, Adam P.; Fernández-Trillo, Jorge; Leipscher, Ulrike; Stühmer, Walter; Barros, Francisco; Pardo, Luis A.

2015-03-01

Voltage-gated channels open paths for ion permeation upon changes in membrane potential, but how voltage changes are coupled to gating is not entirely understood. Two modules can be recognized in voltage-gated potassium channels, one responsible for voltage sensing (transmembrane segments S1 to S4), the other for permeation (S5 and S6). It is generally assumed that the conversion of a conformational change in the voltage sensor into channel gating occurs through the intracellular S4-S5 linker that provides physical continuity between the two regions. Using the pathophysiologically relevant KCNH family, we show that truncated proteins interrupted at, or lacking the S4-S5 linker produce voltage-gated channels in a heterologous model that recapitulate both the voltage-sensing and permeation properties of the complete protein. These observations indicate that voltage sensing by the S4 segment is transduced to the channel gate in the absence of physical continuity between the modules.

Development of Multi-Functional Voltage Restore System

Science.gov (United States)

Suzuki, Satoshi; Ueda, Yoshinobu; Koganezawa, Takehisa; Ogihara, Yoshinori; Mori, Kenjiro; Fukazu, Naoaki

Recently, with the dawn of the electric deregulation, the installation of distributed generation with power electronics device has grown. This current causes a greater concern of power quality, primarily voltage disturbance for power companies, and their interest in power quality is peaking. Utilities are also interested in keeping their customers satisfied, as well as keeping them on-line and creating more revenue for the utility. As a countermeasure against the above surroundings, a variety type of devices based on power electronics has been developed to protect customers' load from power line voltage disturbance. One of them is the series type voltage restore. The series device is an active device, designed to provide a pure sinusoidal load voltage at all times, correcting voltage disturbance. Series type device compensates for voltage anomalies by inserting the ‘missing’ voltage onto the line through insertion transformer and inverter. This paper shows the setting guideline of target level to compensate voltage disturbance, that is, voltage dip, voltage harmonics, voltage imbalance and voltage flicker, and the design approach of the prototype of series voltage restores to accomplish the required compensation level. The prototype system gives satisfactory compensation performance through evaluation tests, which confirm the validity and effectiveness of the system.

Triple Line-Voltage Cascaded VIENNA Converter Applied as the Medium-Voltage AC Drive

Directory of Open Access Journals (Sweden)

Jia Zou

2018-04-01

Full Text Available A novel rectifier based on a triple line-voltage cascaded VIENNA converter (LVC-VC was proposed. Compared to the conventional cascaded H-bridge converters, the switch voltage stress is lower, and the numbers of switches and dc capacitors are fewer under similar operating conditions in the proposed new multilevel converter. The modeling and control for the LVC-VC ware presented. Based on the analysis of the operation principle of the new converter, the power factor correction of the proposed converter was realized by employing a traditional one-cycle control strategy. The minimum average value and maximum harmonic components of the dc-link voltages of the three VIENNA rectifier modules ware calculated. Three VIENNA dc-link voltages were unbalanced under the unbalanced load conditions, so the zero sequence current was injected to the three inner currents for balancing three VIENNA dc-link voltages. Simulation and the results of the experiment verified the availability of the new proposed multilevel converter and the effectiveness of the corresponding control strategy applied.

Coordinated single-phase control scheme for voltage unbalance reduction in low voltage network.

Science.gov (United States)

Pullaguram, Deepak; Mishra, Sukumar; Senroy, Nilanjan

2017-08-13

Low voltage (LV) distribution systems are typically unbalanced in nature due to unbalanced loading and unsymmetrical line configuration. This situation is further aggravated by single-phase power injections. A coordinated control scheme is proposed for single-phase sources, to reduce voltage unbalance. A consensus-based coordination is achieved using a multi-agent system, where each agent estimates the averaged global voltage and current magnitudes of individual phases in the LV network. These estimated values are used to modify the reference power of individual single-phase sources, to ensure system-wide balanced voltages and proper power sharing among sources connected to the same phase. Further, the high X / R ratio of the filter, used in the inverter of the single-phase source, enables control of reactive power, to minimize voltage unbalance locally. The proposed scheme is validated by simulating a LV distribution network with multiple single-phase sources subjected to various perturbations.This article is part of the themed issue 'Energy management: flexibility, risk and optimization'. © 2017 The Author(s).

MOSFET dosimetry: temperature effects in-vivo

International Nuclear Information System (INIS)

Yu, P.K.N.; Cheung, T.; Butson, M.J.; Cancer Services, Wollongong, NSW

2004-01-01

Full text: This note investigates temperature effects on dosimetry using a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for radiotherapy x-ray treatment. This was performed by analysing the dose response and threshold voltage outputs for MOSFET dosimeters as a function of ambient temperature. Results have shown the clinical semiconductor dosimetry system (CSDS) MOSFET provides stable dose measurements with temperatures varying from 15 deg C up to 40 deg C. Thus standard irradiations performed at room temperature can be directly compared to in-vivo dose assessments performed at near body temperature without a temperature correction function. The MOSFET dosimeter threshold voltage varies with temperature and this level is dependant on the dose history of the MOSFET dosimeter. However the variation can be accounted for in the measurement method. For accurate dosimetry the detector should be placed for approximately 60 seconds on a patient to allow thermal equilibrium before measurements are taken with the final reading performed whilst still attached to the patient or conversely left for approximately 120 seconds after removal from the patient if initial readout was measured at room temperature to allow temperature equilibrium to be established. Copyright (2004) Australasian College of Physical Scientists and Engineers in Medicine

Resilient architecture design for voltage variation

CERN Document Server

Reddi, Vijay Janapa

2013-01-01

Shrinking feature size and diminishing supply voltage are making circuits sensitive to supply voltage fluctuations within the microprocessor, caused by normal workload activity changes. If left unattended, voltage fluctuations can lead to timing violations or even transistor lifetime issues that degrade processor robustness. Mechanisms that learn to tolerate, avoid, and eliminate voltage fluctuations based on program and microarchitectural events can help steer the processor clear of danger, thus enabling tighter voltage margins that improve performance or lower power consumption. We describe

Square-Wave Voltage Injection Algorithm for PMSM Position Sensorless Control With High Robustness to Voltage Errors

DEFF Research Database (Denmark)

Ni, Ronggang; Xu, Dianguo; Blaabjerg, Frede

2017-01-01

relationship with the magnetic field distortion. Position estimation errors caused by higher order harmonic inductances and voltage harmonics generated by the SVPWM are also discussed. Both simulations and experiments are carried out based on a commercial PMSM to verify the superiority of the proposed method......Rotor position estimated with high-frequency (HF) voltage injection methods can be distorted by voltage errors due to inverter nonlinearities, motor resistance, and rotational voltage drops, etc. This paper proposes an improved HF square-wave voltage injection algorithm, which is robust to voltage...... errors without any compensations meanwhile has less fluctuation in the position estimation error. The average position estimation error is investigated based on the analysis of phase harmonic inductances, and deduced in the form of the phase shift of the second-order harmonic inductances to derive its...

Divided by the Market, Divided by the State

DEFF Research Database (Denmark)

Wulfgramm, Melike; Starke, Peter

2017-01-01

of the individual differences, the analysis also shows, for the first time, that both high inequality and strongly redistributive policies divide public opinion along the lines of socioeconomic position. Put differently, while market inequality may be associated with less cohesive attitudes, a highly redistributive...... welfare state does not seem to foster agreement among the public, either. These findings have important policy implications for advanced welfare states, including a renewed emphasis on ‘predistribution’ (i.e., policies that influence the primary distribution of income) in order to avoid the scenario...

A comprehensive study of temperature stability of Silicon PhotoMultiplier

International Nuclear Information System (INIS)

Ferri, A; Acerbi, F; Gola, A; Paternoster, G; Piemonte, C; Zorzi, N

2014-01-01

The temperature stability of the SiPM signal output can be a crucial aspect in many applications. In a typical scenario where the detector is biased at a constant voltage, a temperature fluctuation determines a change in the breakdown voltage and consequently in the applied over-voltage. The latter impacts on all the parameters that determine the output signal such as gain, PDE and correlated noise probability. In this paper we show a detailed analysis of the dependence of these parameters versus the temperature. In particular, we analyze two cases in which the quantity of interest is the integrated charge or the signal amplitude, respectively. The model is applied to a 1 × 1 mm 2 FBK RGB SiPM with 50 × 50 μm 2 cells showing a good agreement with the experimental data

Hall Thruster Modeling with a Given Temperature Profile

International Nuclear Information System (INIS)

Dorf, L.; Semenov, V.; Raitses, Y.; Fisch, N.J.

2002-01-01

A quasi one-dimensional steady-state model of the Hall thruster is presented. For given mass flow rate, magnetic field profile, and discharge voltage the unique solution can be constructed, assuming that the thruster operates in one of the two regimes: with or without the anode sheath. It is shown that for a given temperature profile, the applied discharge voltage uniquely determines the operating regime; for discharge voltages greater than a certain value, the sheath disappears. That result is obtained over a wide range of incoming neutral velocities, channel lengths and widths, and cathode plane locations. A good correlation between the quasi one-dimensional model and experimental results can be achieved by selecting an appropriate temperature profile. We also show how the presented model can be used to obtain a two-dimensional potential distribution

Power-MOSFET Voltage Regulator

Science.gov (United States)

Miller, W. N.; Gray, O. E.

1982-01-01

Ninety-six parallel MOSFET devices with two-stage feedback circuit form a high-current dc voltage regulator that also acts as fully-on solid-state switch when fuel-cell out-put falls below regulated voltage. Ripple voltage is less than 20 mV, transient recovery time is less than 50 ms. Parallel MOSFET's act as high-current dc regulator and switch. Regulator can be used wherever large direct currents must be controlled. Can be applied to inverters, industrial furnaces photovoltaic solar generators, dc motors, and electric autos.

CMOS-compatible high-voltage integrated circuits

Energy Technology Data Exchange (ETDEWEB)

Parpia, Z

1988-01-01

Considerable savings in cost and development time can be achieved if high-voltage ICs (HVICs) are fabricated in an existing low-voltage process. In this thesis, the feasibility of fabricating HVICs in a standard CMOS process is investigated. The high-voltage capabilities of an existing 5-{mu}m CMOS process are first studied. High-voltage n- and p-channel transistors with breakdown voltages of 50 and 190 V, respectively, were fabricated without any modifications to the process under consideration. SPICE models for these transistors are developed, and their accuracy verified by comparison with experimental results. In addition, the effect of the interconnect metallization on the high-voltage performance of these devices is also examined. Polysilicon field plates are found to be effective in preventing premature interconnect induced breakdown in these devices. A novel high-voltage transistor structure, the insulated base transistor (IBT), based on a merged MOS-bipolar concept, is proposed and implemented. In order to enhance the high-voltage device capabilities, an improved CMOS-compatible HVIC process using junction isolation is developed.

Effects of temperature variation on MOSFET dosimetry

International Nuclear Information System (INIS)

Cheung Tsang; Butson, Martin J; Yu, Peter K N

2004-01-01

This note investigates temperature effects on dosimetry using a metal oxide semiconductor field effect transistor (MOSFET) for radiotherapy x-ray treatment. This was performed by analysing the dose response and threshold voltage outputs for MOSFET dosimeters as a function of ambient temperature. Results have shown that the clinical semiconductor dosimetry system (CSDS) MOSFET provides stable dose measurements with temperatures varying from 15 deg. C up to 40 deg. C. Thus standard irradiations performed at room temperature can be directly compared to in vivo dose assessments performed at near body temperature without a temperature correction function. The MOSFET dosimeter threshold voltage varies with temperature and this level is dependent on the dose history of the MOSFET dosimeter. However, the variation can be accounted for in the measurement method. For accurate dosimetry, the detector should be placed for approximately 60 s on a patient to allow thermal equilibrium before measurements are taken with the final reading performed whilst still attached to the patient or conversely left for approximately 120 s after removal from the patient if initial readout was measured at room temperature to allow temperature equilibrium to be established. (note)

Voltage-assisted polymer wafer bonding

International Nuclear Information System (INIS)

Varsanik, J S; Bernstein, J J

2012-01-01

Polymer wafer bonding is a widely used process for fabrication of microfluidic devices. However, best practices for polymer bonds do not achieve sufficient bond strength for many applications. By applying a voltage to a polymer bond in a process called voltage-assisted bonding, bond strength is shown to improve dramatically for two polymers (Cytop™ and poly(methyl methacrylate)). Several experiments were performed to provide a starting point for further exploration of this technique. An optimal voltage range is experimentally observed with a reduction in bonding strength at higher voltages. Additionally, voltage-assisted bonding is shown to reduce void diameter due to bond defects. An electrostatic force model is proposed to explain the improved bond characteristics. This process can be used to improve bond strength for most polymers. (paper)

Voltage Controlled Dynamic Demand Response

DEFF Research Database (Denmark)

Bhattarai, Bishnu Prasad; Bak-Jensen, Birgitte; Mahat, Pukar

2013-01-01

Future power system is expected to be characterized by increased penetration of intermittent sources. Random and rapid fluctuations in demands together with intermittency in generation impose new challenges for power balancing in the existing system. Conventional techniques of balancing by large...... central or dispersed generations might not be sufficient for future scenario. One of the effective methods to cope with this scenario is to enable demand response. This paper proposes a dynamic voltage regulation based demand response technique to be applied in low voltage (LV) distribution feeders....... An adaptive dynamic model has been developed to determine composite voltage dependency of an aggregated load on feeder level. Following the demand dispatch or control signal, optimum voltage setting at the LV substation is determined based on the voltage dependency of the load. Furthermore, a new technique...

Characterization of diode valve in medium voltage dc/dc converter for wind turbines

DEFF Research Database (Denmark)

Dincan, Catalin Gabriel; Kjær, Philip Carne

2016-01-01

This paper proposes a methodology for characterization of medium voltage (MV), medium frequency (MF) rectifier diode valve. The intended application is for 10MW dc/dc converters used in DC offshore wind turbines. Sensitivity to semiconductor component parameter variation, snubber component tolera...... tolerance, influence of temperature and stray capacitance are analyzed. It is concluded that the largest impact on sensitivity is given by reverse recovery charge variation and differences of temperature between adjacent devices....

Betavoltaic performance under extreme temperatures

Directory of Open Access Journals (Sweden)

Adams Tom

2016-01-01

Full Text Available Longevity of sensors and portable devices is severely limited by temperature, chemical instability, and electrolyte leakage issues associated with conventional electrochemical batteries. Betavoltaics, which operate similar to photo voltaics, can operate in a wide temperature range safely without permanent degradation. Though not a new concept, which began in the 1950's and peaked in the mid 1970's, research has been minimal and sporadic until recent advancements in ultra-low power electronics and materialization of low power applications. The technology is rapidly maturing, generating research, and development in increasing the beta emitting source and semiconductor efficiencies. This study presents an update on betavoltaic technology, results from temperature evaluation on commercially available General Licensed betavoltaic cells, development of a hybrid system for latent and burst power, modeling and simulation techniques and results, and current and proposed research and development. Betavoltaic performance was successfully demonstrated for a wide temperature range (-30°C to 70°C. Short circuit current and open circuit voltage were used to compare electrical performance. Results indicate that the open-circuit voltage and maximum power decreased as temperature increased due to increases in the semiconductor's intrinsic carrier concentration.

Stochastic modelling of basal temperatures in divide regions of the Antarctic ice sheet over the last 1.5 million years

Science.gov (United States)

Van Liefferinge, Brice; Pattyn, Frank; Cavitte, Marie G. P.; Young, Duncan A.; Roberts, Jason L.

2017-04-01

The quest for oldest ice in Antarctica has recently been launched through an EU H2020 project (Beyond EPICA - Oldest Ice) and aims at identifying suitable areas for a potential future drilling. Retrieving an ice core of such age is essential to understand the relation between orbital changes and atmospheric composition during the mid-Pliocene transition. However, sites for a potential undisturbed record of 1.5 million-year old ice in Antarctica are difficult to find and require slow-moving ice (preferably an ice divide) and basal conditions that are not disturbed by large topographic variations. Furthermore, ice should be sufficiently thick but cold basal conditions should still prevail, since basal melting would destroy the bottom layers. Therefore, ice-flow conditions and thermodynamic characteristics are crucial for identifying potential locations of undisturbed ice. Van Liefferinge and Pattyn (2013) identified suitable areas based on a pan-Antarctic simplified thermodynamic ice sheet model and demonstrated that uncertainty in geothermal conditions remain a major unknown. In order to refine these estimates, and provide uncertainties, we employ a full thermo-mechanically coupled higher-order ice sheet model (Pattyn, 2003; Pattyn et al., 2004). Initial conditions for the calculations are based on an inversion of basal slipperiness, based on observed surface topography (Pollard and DeConto, 2012; Pattyn, in prep.). Uncertainties in geothermal conditions are introduced using the convolution of two Gaussian probability density functions: (a) the reconstruction of the Antarctic ice sheet geometry and testing ice thickness variability over the last 2 million years (Pollard and DeConto, 2009) and (b) the surface temperature reconstruction over the same period (Snyder et al., 2016). The standard deviation, the skewness and the kurtosis of the whole Antarctic ice sheet are analyzed to observe likely probable melt conditions. Finally, we focus on model results in the

Performance evaluation of wideband bio-impedance spectroscopy using constant voltage source and constant current source

International Nuclear Information System (INIS)

Mohamadou, Youssoufa; Oh, Tong In; Wi, Hun; Sohal, Harsh; Farooq, Adnan; Woo, Eung Je; McEwan, Alistair Lee

2012-01-01

Current sources are widely used in bio-impedance spectroscopy (BIS) measurement systems to maximize current injection for increased signal to noise while keeping within medical safety specifications. High-performance current sources based on the Howland current pump with optimized impedance converters are able to minimize stray capacitance of the cables and setup. This approach is limited at high frequencies primarily due to the deteriorated output impedance of the constant current source when situated in a real measurement system. For this reason, voltage sources have been suggested, but they require a current sensing resistor, and the SNR reduces at low impedance loads due to the lower current required to maintain constant voltage. In this paper, we compare the performance of a current source-based BIS and a voltage source-based BIS, which use common components. The current source BIS is based on a Howland current pump and generalized impedance converters to maintain a high output impedance of more than 1 MΩ at 2 MHz. The voltage source BIS is based on voltage division between an internal current sensing resistor (R s ) and an external sample. To maintain high SNR, R s is varied so that the source voltage is divided more or less equally. In order to calibrate the systems, we measured the transfer function of the BIS systems with several known resistor and capacitor loads. From this we may estimate the resistance and capacitance of biological tissues using the least-squares method to minimize error between the measured transimpedance excluding the system transfer function and that from an impedance model. When tested on realistic loads including discrete resistors and capacitors, and saline and agar phantoms, the voltage source-based BIS system had a wider bandwidth of 10 Hz to 2.2 MHz with less than 1% deviation from the expected spectra compared to more than 10% with the current source. The voltage source also showed an SNR of at least 60 dB up to 2.2 MHz

A high-voltage equipment (high voltage supply, high voltage pulse generators, resonant charging inductance, synchro-instruments for gyrotron frequency measurements) for plasma applications

International Nuclear Information System (INIS)

Spassov, Velin

1996-01-01

This document reports my activities as visitor-professor at the Gyrotron Project - INPE Plasma Laboratory. The main objective of my activities was designing, construction and testing a suitable high-voltage pulse generator for plasma applications, and efforts were concentrated on the following points: Design of high-voltage resonant power supply with tunable output (0 - 50 kV) for line-type high voltage pulse generator; design of line-type pulse generator (4 microseconds pulse duration, 0 - 25 kV tunable voltage) for non linear loads such as a gyrotron and P III reactor; design of resonant charging inductance for resonant line-type pulse generator, and design of high resolution synchro instrument for gyrotron frequency measurement. (author)

Performance of High Temperature Operational Amplifier, Type LM2904WH, under Extreme Temperatures

Science.gov (United States)

Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

2008-01-01

Operation of electronic parts and circuits under extreme temperatures is anticipated in NASA space exploration missions as well as terrestrial applications. Exposure of electronics to extreme temperatures and wide-range thermal swings greatly affects their performance via induced changes in the semiconductor material properties, packaging and interconnects, or due to incompatibility issues between interfaces that result from thermal expansion/contraction mismatch. Electronics that are designed to withstand operation and perform efficiently in extreme temperatures would mitigate risks for failure due to thermal stresses and, therefore, improve system reliability. In addition, they contribute to reducing system size and weight, simplifying its design, and reducing development cost through the elimination of otherwise required thermal control elements for proper ambient operation. A large DC voltage gain (100 dB) operational amplifier with a maximum junction temperature of 150 C was recently introduced by STMicroelectronics [1]. This LM2904WH chip comes in a plastic package and is designed specifically for automotive and industrial control systems. It operates from a single power supply over a wide range of voltages, and it consists of two independent, high gain, internally frequency compensated operational amplifiers. Table I shows some of the device manufacturer s specifications.

Capturing power at higher voltages from arrays of microbial fuel cells without voltage reversal

KAUST Repository

Kim, Younggy

2011-01-01

Voltages produced by microbial fuel cells (MFCs) cannot be sustainably increased by linking them in series due to voltage reversal, which substantially reduces stack voltages. It was shown here that MFC voltages can be increased with continuous power production using an electronic circuit containing two sets of multiple capacitors that were alternately charged and discharged (every one second). Capacitors were charged in parallel by the MFCs, but linked in series while discharging to the circuit load (resistor). The parallel charging of the capacitors avoided voltage reversal, while discharging the capacitors in series produced up to 2.5 V with four capacitors. There were negligible energy losses in the circuit compared to 20-40% losses typically obtained with MFCs using DC-DC converters to increase voltage. Coulombic efficiencies were 67% when power was generated via four capacitors, compared to only 38% when individual MFCs were operated with a fixed resistance of 250 Ω. The maximum power produced using the capacitors was not adversely affected by variable performance of the MFCs, showing that power generation can be maintained even if individual MFCs perform differently. Longer capacitor charging and discharging cycles of up to 4 min maintained the average power but increased peak power by up to 2.6 times. These results show that capacitors can be used to easily obtain higher voltages from MFCs, allowing for more useful capture of energy from arrays of MFCs. © 2011 The Royal Society of Chemistry.

Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature

Science.gov (United States)

Pavanello, Marcelo Antonio; de Souza, Michelly; Ribeiro, Thales Augusto; Martino, João Antonio; Flandre, Denis

2016-11-01

This paper presents the operation of Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFETs at low temperatures down to liquid helium temperature in comparison to standard uniformly doped transistors. Devices from two different technologies have been measured and show that the mobility increase rate with temperature for GC SOI transistors is similar to uniformly doped devices for temperatures down to 90 K. However, at liquid helium temperature the rate of mobility increase is larger in GC SOI than in standard devices because of the different mobility scattering mechanisms. The analog properties of GC SOI devices have been investigated down to 4.16 K and show that because of its better transconductance and output conductance, an intrinsic voltage gain improvement with temperature is also obtained for devices in the whole studied temperature range. GC devices are also capable of reducing the impact ionization due to the high electric field in the drain region, increasing the drain breakdown voltage of fully-depleted SOI MOSFETs at any studied temperature and the kink voltage at 4.16 K.

Splicing the Divide: A Review of Research on the Evolving Digital Divide among K-12 Students

Science.gov (United States)

Dolan, Jennifer E.

2016-01-01

The digital divide has narrowed with regard to one definition of access to technology--the binary view of the "haves" and "have-nots." However, use of technology at home and in school is not equitable for all students. According to recent literature, a broader and more nuanced definition of the technological divide is necessary…

Silicon drift detectors for high resolution room temperature X-ray spectroscopy

International Nuclear Information System (INIS)

Lechner, P.; Eckbauer, S.; Hauff, D.; Strueder, L.; Gatti, E.; Longoni, A.; Sampietro, M.

1996-01-01

New cylindrical silicon drift detectors have been designed, fabricated and tested. They comprise an integrated on-chip amplifier system with continuous reset, on-chip voltage divider, electron accumulation layer stabilizer, large area, homogeneous radiation entrance window and a drain for surface generated leakage current. The test of the 3.5 mm 2 large individual devices, which have also been grouped together to form a sensitive area up to 21 mm 2 have shown the following spectroscopic results: at room temperature (300 K) the devices have shown a full width at half maximum at the Mn Kα line of a radioactive 55 Fe source of 225 eV with shaping times of 250 to 500 ns. At -20 C the resolution improves to 152 eV at 2 μs Gaussian shaping. At temperatures below 200 K the energy resolution is below 140 eV. With the implementation of a digital filtering system the resolution approaches 130 eV. The system was operated with count rates up to 800 000 counts per second and per readout node, still conserving the spectroscopic qualities of the detector system. (orig.)

High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

Science.gov (United States)

Shimer, Daniel W.; Lange, Arnold C.

1995-01-01

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs

Science.gov (United States)

Shimer, D.W.; Lange, A.C.

1995-05-23

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

Trap Healing for High-Performance Low-Voltage Polymer Transistors and Solution-Based Analog Amplifiers on Foil.

Science.gov (United States)

Pecunia, Vincenzo; Nikolka, Mark; Sou, Antony; Nasrallah, Iyad; Amin, Atefeh Y; McCulloch, Iain; Sirringhaus, Henning

2017-06-01

Solution-processed semiconductors such as conjugated polymers have great potential in large-area electronics. While extremely appealing due to their low-temperature and high-throughput deposition methods, their integration in high-performance circuits has been difficult. An important remaining challenge is the achievement of low-voltage circuit operation. The present study focuses on state-of-the-art polymer thin-film transistors based on poly(indacenodithiophene-benzothiadiazole) and shows that the general paradigm for low-voltage operation via an enhanced gate-to-channel capacitive coupling is unable to deliver high-performance device behavior. The order-of-magnitude longitudinal-field reduction demanded by low-voltage operation plays a fundamental role, enabling bulk trapping and leading to compromised contact properties. A trap-reduction technique based on small molecule additives, however, is capable of overcoming this effect, allowing low-voltage high-mobility operation. This approach is readily applicable to low-voltage circuit integration, as this work exemplifies by demonstrating high-performance analog differential amplifiers operating at a battery-compatible power supply voltage of 5 V with power dissipation of 11 µW, and attaining a voltage gain above 60 dB at a power supply voltage below 8 V. These findings constitute an important milestone in realizing low-voltage polymer transistors for solution-based analog electronics that meets performance and power-dissipation requirements for a range of battery-powered smart-sensing applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Voltage-gated lipid ion channels

DEFF Research Database (Denmark)

Blicher, Andreas; Heimburg, Thomas Rainer

2013-01-01

Synthetic lipid membranes can display channel-like ion conduction events even in the absence of proteins. We show here that these events are voltage-gated with a quadratic voltage dependence as expected from electrostatic theory of capacitors. To this end, we recorded channel traces and current...... histograms in patch-experiments on lipid membranes. We derived a theoretical current-voltage relationship for pores in lipid membranes that describes the experimental data very well when assuming an asymmetric membrane. We determined the equilibrium constant between closed and open state and the open...... probability as a function of voltage. The voltage-dependence of the lipid pores is found comparable to that of protein channels. Lifetime distributions of open and closed events indicate that the channel open distribution does not follow exponential statistics but rather power law behavior for long open times...

Conservation voltage regulation (CVR) applied to energy savings by voltage-adjusting equipment through AMI

Science.gov (United States)

Lan, B.-R.; Chang, C.-A.; Huang, P.-Y.; Kuo, C.-H.; Ye, Z.-J.; Shen, B.-C.; Chen, B.-K.

2017-11-01

Conservation voltage reduction (CVR) includes peak demand reduction, energy conservation, carbon emission reduction, and electricity bill reduction. This paper analyzes the energy-reduction of Siwei Feeders with applying CVR, which are situated in Penghu region and equipped with smart meters. Furthermore, the applicable voltage reduction range for the feeders will be explored. This study will also investigate how the CVR effect and energy conservation are improved with the voltage control devices integrated. The results of this study can serve as a reference for the Taiwan Power Company to promote and implement voltage reduction and energy conservation techniques. This study is expected to enhance the energy-reduction performance of the Penghu Low Carbon Island Project.

Power Divider for Waveforms Rich in Harmonics

Science.gov (United States)

Sims, William Herbert, III

2005-01-01

A method for dividing the power of an electronic signal rich in harmonics involves the use of an improved divider topology. A divider designed with this topology could be used, for example, to propagate a square-wave signal in an amplifier designed with a push-pull configuration to enable the generation of more power than could be generated in another configuration.

Improved detection of electrical activity with a voltage probe based on a voltage-sensing phosphatase.

Science.gov (United States)

Tsutsui, Hidekazu; Jinno, Yuka; Tomita, Akiko; Niino, Yusuke; Yamada, Yoshiyuki; Mikoshiba, Katsuhiko; Miyawaki, Atsushi; Okamura, Yasushi

2013-09-15

  One of the most awaited techniques in modern physiology is the sensitive detection of spatiotemporal electrical activity in a complex network of excitable cells. The use of genetically encoded voltage probes has been expected to enable such analysis. However, in spite of recent progress, existing probes still suffer from low signal amplitude and/or kinetics too slow to detect fast electrical activity. Here, we have developed an improved voltage probe named Mermaid2, which is based on the voltage-sensor domain of the voltage-sensing phosphatase from Ciona intestinalis and Förster energy transfer between a pair of fluorescent proteins. In mammalian cells, Mermaid2 permits ratiometric readouts of fractional changes of more than 50% over a physiologically relevant voltage range with fast kinetics, and it was used to follow a train of action potentials at frequencies of up to 150 Hz. Mermaid2 was also able to detect single action potentials and subthreshold voltage responses in hippocampal neurons in vitro, in addition to cortical electrical activity evoked by sound stimuli in single trials in living mice.

Novel Interleaved Converter with Extra-High Voltage Gain to Process Low-Voltage Renewable-Energy Generation

Directory of Open Access Journals (Sweden)

Chih-Lung Shen

2016-10-01

Full Text Available This paper presents a novel interleaved converter (NIC with extra-high voltage gain to process the power of low-voltage renewable-energy generators such as photovoltaic (PV panel, wind turbine, and fuel cells. The NIC can boost a low input voltage to a much higher voltage level to inject renewable energy to DC bus for grid applications. Since the NIC has two circuit branches in parallel at frond end to share input current, it is suitable for high power applications. In addition, the NIC is controlled in an interleaving pattern, which has the advantages that the NIC has lower input current ripple, and the frequency of the ripple is twice the switching frequency. Two coupled inductors and two switched capacitors are incorporated to achieve a much higher voltage gain than conventional high step-up converters. The proposed NIC has intrinsic features such as leakage energy totally recycling and low voltage stress on power semiconductor. Thorough theoretical analysis and key parameter design are presented in this paper. A prototype is built for practical measurements to validate the proposed NIC.

A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit

Directory of Open Access Journals (Sweden)

Zong Yao

2016-06-01

Full Text Available This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of −50 °C to 220 °C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts, the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor’s output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments.

Voltage transients in thin-film InSb Hall sensor

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Alexey Bardin

Full Text Available The work is reached to study temperature transients in thin-film Hall sensors. We experimentally study InSb thin-film Hall sensor. We find transients of voltage with amplitude about 10 μV on the sensor ports after current switching. We demonstrate by direct measurements that the transients is caused by thermo-e.m.f., and both non-stationarity and heterogeneity of temperature in the film. We find significant asymmetry of temperature field for different direction of the current, which is probably related to Peltier effect. The result can be useful for wide range of scientist who works with switching of high density currents in any thin semiconductor films. 2000 MSC: 41A05, 41A10, 65D05, 65D17, Keywords: Thin-films, Semiconductors, Hall sensor, InSb, thermo-e.m.f.

Investigation of phase-wise voltage regulator control logics for compensating voltage deviations in an experimental low voltage network

DEFF Research Database (Denmark)

Hu, Junjie; Zecchino, Antonio; Marinelli, Mattia

2016-01-01

This paper investigates the control logics of an on-load tap-changer (OLTC) transformer by means of an experimental system validation. The experimental low-voltage unbalanced system consists of a decoupled single-phase OLTC transformer, a 75-metre 16 mm2 cable, a controllable single-phase resistive...... load and an electric vehicle, which has the vehicle-to-grid function. Three control logics of the OLTC transformer are described in the study. The three control logics are classified based on their control objectives and control inputs, which include network currents and voltages, and can be measured...... either locally or remotely. To evaluate and compare the control performances of the three control logics, all the tests use the same loading profiles. The experimental results indicate that the modified line compensation control can regulate voltage in a safe band in the case of various load...

Operation characteristics of a multiple type MCFC

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Kuroe, S.; Kamo, T. [Hitachi Research Lab., Hitachi, Ltd., Ibaraki-ken (Japan); Fujimura, H.; Kahara, T. [Hitachi, Ltd., Ibaraki-ken (Japan)

1996-12-31

Multiple type structure of MCFC of which the separator of the cell is divided by four element cells has been studied. For the stable operation of this type cell, the effect of gas flow rate and temperature distribution on the cell voltage should be clear. In order to clarify these characteristics, a small sized mimic model has been made and tested. The flow rate distribution for the four element cells were varied and cell voltage and temperature distribution were measured for each cell. The decrease in cell voltage and the increase in maximum temperature became remarkable when the apparent utilization factor for one element cell became over 100%. The calculated results agreed fairly good with test results.

Room temperature direct bonding of LiNbO3 crystal layers and its application to high-voltage optical sensing

International Nuclear Information System (INIS)

Tulli, D; Janner, D; Pruneri, V

2011-01-01

LiNbO 3 is a crystal widely used in photonics and acoustics, for example in electro-optic modulation, nonlinear optical frequency conversion, electric field sensing and surface acoustic wave filtering. It often needs to be combined with other materials and used in thin layers to achieve the adequate device performance. In this paper, we investigate direct bonding of LiNbO 3 crystals with other dielectric materials, such as Si and fused silica (SiO 2 ), and we show that specific surface chemical cleaning, together with Ar or O 2 plasma activation, can be used to increase the surface free energy and achieve effective bonding at room temperature. The resulting hybrid material bonding is very strong, making the dicing and grinding of LiNbO 3 layers as thin as 15 µm possible. To demonstrate the application potentials of the proposed bonding technique, we have fabricated and characterized a high-voltage field sensor with high sensitivity in a domain inverted and bonded LiNbO 3 waveguide substrate

Spatio-temporal behavior of brightness temperature in Tel-Aviv and its application to air temperature monitoring

International Nuclear Information System (INIS)

Pelta, Ran; Chudnovsky, A. Alexandra; Schwartz, Joel

2016-01-01

This study applies remote sensing technology to assess and examine the spatial and temporal Brightness Temperature (BT) profile in the city of Tel-Aviv, Israel over the last 30 years using Landsat imagery. The location of warmest and coldest zones are constant over the studied period. Distinct diurnal and temporal BT behavior divide the city into four different segments. As an example of future application, we applied mixed regression models with daily random slopes to correlate Landsat BT data with monitored air temperature (Tair) measurements using 14 images for 1989–2014. Our preliminary results show a good model performance with R"2 = 0.81. Furthermore, based on the model's results, we analyzed the spatial profile of Tair within the study domain for representative days. - Highlights: • The location of warmest and coldest zones are constant over the last 30 years. • Distinct diurnal and temporal Brightness Temperature behavior divide the city into four segments. • We assess air temperature from satellite surface temperature (R"2 = 0.81). - The location of warmest and coldest zones are constant over the last 30 years. Distinct diurnal and temporal Surface Temperature behavior divide the city into four different segments.