Hot wire chemical vapor deposition: limits and opportunities of protecting the tungsten catalyzer from silicide with a cavity

International Nuclear Information System (INIS)

Frigeri, P.A.; Nos, O.; Bengoechea, S.; Frevert, C.; Asensi, J.M.; Bertomeu, J.

2009-01-01

Hot Wire Chemical Vapor Deposition (HW-CVD) is one of the most promising techniques for depositing the intrinsic microcrystalline silicon layer for the production of micro-morph solar cells. However, the silicide formation at the colder ends of the tungsten wire drastically reduces the lifetime of the catalyzer, thus limiting its industrial exploitation. A simple but interesting strategy to decrease the silicide formation is to hide the electrical contacts of the catalyzer in a long narrow cavity which reduces the probability of the silane molecules to reach the colder ends of the wire. In this paper, the working mechanism of the cavity is elucidated. Measurements of the thickness profile of the silicon deposited in the internal walls of the cavity have been compared with those predicted using a simple diffusion model based on the assumption of Knudsen flow. A lifetime study of the protected and unprotected wires has been carried out. The different mechanisms which determine the deterioration of the catalyzer have been identified and discussed.

Chemical vapor deposition of refractory ternary nitrides for advanced diffusion barriers

Energy Technology Data Exchange (ETDEWEB)

Custer, Jonathan S.; Fleming, James G.; Roherty-Osmun, Elizabeth; Smith, Paul Martin

1998-09-22

Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturing of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.

Tungsten anode tubes with K-edge filters for mammography

Energy Technology Data Exchange (ETDEWEB)

Beaman, S.; Lillicrap, S.C. (Wessex Regional Medical Physics Service, Bath (UK)); Price, J.L. (Jarvis Screening Centre, Guildford (UK))

1983-10-01

Optimum X-ray energies for mammography have previously been calculated using the maximum signal to noise ratio (SNR) per unit dose to the breast, or the minimum exposure for constant SNR. Filters having absorption edges at appropriate energy positions have been used to modify the shape of tungsten anode spectra towards the calculated optimum. The suitability of such spectra for practical use has been assessed by comparing the film image quality and the incident breast dose obtained using a K-edge filtered tungsten anode tube with that obtained using a molybdenum anode. Image quality has been assessed by using a 'random' phantom and by comparing mammograms where one breast was radiographed using a filtered tungsten anode tube and the other using a standard molybdenum anode unit. Relative breast doses were estimated from both ionisation chamber measurements with a phantom and thermoluminescent dosimetry measurements on the breast. Film image quality assessment indicated that the filtered tungsten anode tube gave results not significantly different from those obtained with a molybdenum anode tube for a tissue thickness of about 4 cm and which were better for larger breast thicknesses. Doses could be reduced to between one-half and one-third with the filtered tungsten anode tube.

Tungsten anode tubes with K-edge filters for mammography

International Nuclear Information System (INIS)

Beaman, S.; Lillicrap, S.C.; Price, J.L.

1983-01-01

Optimum X-ray energies for mammography have previously been calculated using the maximum signal to noise ratio (SNR) per unit dose to the breast, or the minimum exposure for constant SNR. Filters having absorption edges at appropriate energy positions have been used to modify the shape of tungsten anode spectra towards the calculated optimum. The suitability of such spectra for practical use has been assessed by comparing the film image quality and the incident breast dose obtained using a K-edge filtered tungsten anode tube with that obtained using a molybdenum anode. Image quality has been assessed by using a 'random' phantom and by comparing mammograms where one breast was radiographed using a filtered tungsten anode tube and the other using a standard molybdenum anode unit. Relative breast doses were estimated from both ionisation chamber measurements with a phantom and thermoluminescent dosimetry measurements on the breast. Film image quality assessment indicated that the filtered tungsten anode tube gave results not significantly different from those obtained with a molybdenum anode tube for a tissue thickness of abut 4 cm and which were better for larger breast thicknesses. Doses could be reduced to between one-half and one-third with the filtered tungsten anode tube. (U.K.)

The relationship between structural evolution and electrical percolation of the initial stages of tungsten chemical vapor deposition on polycrystalline TiN

International Nuclear Information System (INIS)

Rozenblat, A.; Haimson, S.; Shacham-Diamand, Y.; Horvitz, D.

2012-01-01

This paper presents experimental results and a geometric model of the evolution of sheet resistance and surface morphology during the transition from nucleation to percolation of tungsten chemical vapor deposition over ultrathin polycrystalline titanium nitride (TiN). We observed two mechanisms of reduction in sheet resistance. At deposition temperatures higher than 310 deg. C, percolation effect is formed at ∼35% of surface coverage, θ, and characterized with a sharp drop in resistance. At temperature below 310 deg. C, a reduction in resistance occurs in two steps. The first step occurs when θ = 35% and the second step at θ = 85%. We suggest a geometric model in which the electrical percolation pass is modulated by the thickness threshold of the islands at the instant of collision.

Investigation of tungsten mass transfer in rarefied air oxygen and water vapors

International Nuclear Information System (INIS)

Evsikov, A.S.; Makeev, A.A.; Lyubimova, L.L.; Sinyavskij, V.V.

1989-01-01

The results of experimental investigations of oxygen and water vapor effect on the rate of tungsten evaporation are presented. Methods for carrying out an experiment are presented. The experiments are carried out at the 2600 degC tungsten wire temperature and the pressure of oxygen and water vapors (2x10 -3 -5) Pa. Registration of final products of mass transfer is carried out by the DRON-2.0 diffractometer using a detachable substrate. Empirical dependence taking into account oxygen and water vapor effect on the rate of tungsten evaporation is suggested. It is marked that air oxygen and water vapor increase evaporation rate uniformly the difference is observed only in final products of interaction

Vapor deposition in basaltic stalactites, Kilauea, Hawaii

Science.gov (United States)

Baird, A. K.; Mohrig, D. C.; Welday, E. E.

Basaltic stalacties suspended from the ceiling of a large lava tube at Kilauea, Hawaii, have totally enclosed vesicles whose walls are covered with euhedral FeTi oxide and silicate crystals. The walls of the vesicles and the exterior surfaces of stalactites are Fe and Ti enriched and Si depleted compared to common basalt. Minerals in vesicles have surface ornamentations on crystal faces which include alkali-enriched, aluminosilicate glass(?) hemispheres. No sulfide-, chloride-, fluoride-, phosphate- or carbonate-bearing minerals are present. Minerals in the stalactites must have formed by deposition from an iron oxide-rich vapor phase produced by the partial melting and vaporization of wall rocks in the tube.

Study on purification of carbon nano tubes grown on Fe/Ni bimetallic catalyst supported on Mg O by thermal chemical vapor deposition

International Nuclear Information System (INIS)

Mirershadi, S.; Mortazavi, Z.; Reyhani, A.; Norouzian, Sh.; Moniri, N.; Novinrooz, A. J.

2007-01-01

Carbon nano tubes grown on Fe/Ni bimetallic catalysts supported on Mg O by thermal chemical vapor deposition. Then purification of carbon nano tubes by oxidation under air at atmospheric pressure and acid treatment with HCl, have been studied. The Scanning electron microscopy observation showed impurities with carbon nano tubes. Scanning electron microscopy, XRD, Raman spectroscopy and Thermogravimetric analysis/Differential Scanning Calorimetry techniques have been used to investigate the effect of purification of carbon nano tubes on morphology and structural quality of them. The weight ratio of carbon nano tubes in purified sample re saved to 85/8 %.

Chemical vapor deposition based tungsten disulfide (WS2) thin film transistor

KAUST Repository

Hussain, Aftab M.; Sevilla, Galo T.; Rader, Kelly; Hussain, Muhammad Mustafa

2013-01-01

electric field. This makes them an interesting option for channel material in field effect transistors (FETs). Therefore, we show a highly manufacturable chemical vapor deposition (CVD) based simple process to grow WS2 directly on silicon oxide in a furnace

Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

Science.gov (United States)

Papadimitropoulos, G; Davazoglou, D

2011-09-01

In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage.

Results of Uranium Dioxide-Tungsten Irradiation Test and Post-Test Examination

Science.gov (United States)

Collins, J. F.; Debogdan, C. E.; Diianni, D. C.

1973-01-01

A uranium dioxide (UO2) fueled capsule was fabricated and irradiated in the NASA Plum Brook Reactor Facility. The capsule consisted of two bulk UO2 specimens clad with chemically vapor deposited tungsten (CVD W) 0.762 and 0.1016 cm (0.030-and 0.040-in.) thick, respectively. The second specimen with 0.1016-cm (0.040-in.) thick cladding was irradiated at temperature for 2607 hours, corresponding to an average burnup of 1.516 x 10 to the 20th power fissions/cu cm. Postirradiation examination showed distortion in the bottom end cap, failure of the weld joint, and fracture of the central vent tube. Diametral growth was 1.3 percent. No evidence of gross interaction between CVD tungsten or arc-cast tungsten cladding and the UO2 fuel was observed. Some of the fission gases passed from the fuel cavity to the gas surrounding the fuel specimen via the vent tube and possibly the end-cap weld failure. Whether the UO2 loss rates through the vent tube were within acceptable limits could not be determined in view of the end-cap weld failure.

Tungsten deposition by hydrogen-atom reaction with tungsten hexafluoride

International Nuclear Information System (INIS)

Lee, W.W.

1991-01-01

Using gaseous hydrogen atoms with WF 6 , tungsten atoms can be produced in a gas-phase reaction. The atoms then deposit in a near-room temperature process, which results in the formation of tungsten films. The W atoms (10 10 -10 11 /cm 3 ) were measured in situ by atomic absorption spectroscopy during the CVD process. Deposited W films were characterized by Auger electron spectroscopy, Rutherford backscattering, and X-ray diffraction. The surface morphology of the deposited films and filled holes was studied using scanning electron microscopy. The deposited films were highly adherent to different substrates, such as Si, SiO 2 , Ti/Si, TiN/Si and Teflon. The reaction mechanism and kinetics were studied. The experimental results indicated that this method has three advantages compared to conventional CVD or PECVD: (1) film growth occurs at low temperatures; (2) deposition takes place in a plasma-free environment; and (3) a low level of impurities results in high-quality adherent films

Surface studies of tungsten erosion and deposition in JT-60U

International Nuclear Information System (INIS)

Ueda, Y.; Fukumoto, M.; Nishikawa, M.; Tanabe, T.; Miya, N.; Arai, T.; Masaki, K.; Ishimoto, Y.; Tsuzuki, K.; Asakura, N.

2007-01-01

In order to study tungsten erosion and migration in JT-60U, 13 W tiles have been installed in the outer divertor region and tungsten deposition on graphite tiles was measured. Dense local tungsten deposition was observed on a CFC tile toroidally adjacent to the W tiles, which resulted from prompt ionization and short range migration of tungsten along field lines. Tungsten deposition with relatively high surface density was found on an inner divertor tile around standard inner strike positions and on an outer wing tile of a dome. On the outer wing tile, tungsten deposition was relatively high compared with carbon deposition. In addition, roughly uniform tungsten depth distribution near the upper edge of the inner divertor tile was observed. This could be due to lift-up of strike point positions in selected 25 shots and tungsten flow in the SOL plasma

Fabrication of thin-wall, freestanding inertial confinement fusion targets by chemical vapor deposition

International Nuclear Information System (INIS)

Carroll, D.W.; McCreary, W.J.

1982-01-01

To meet the requirements for plasma physics experiments in the inertial confinement fusion (ICF) program, chemical vapor deposition (CVD) in fluid beds was used to fabricate freestanding tungsten spheres and cylinders with wall thicknesses less than 5.0 μm. Molybdenum and molybdenum alloy (TZM) mandrels of the desired geometry were suspended in a carrier bed of dense microspheres contained in an induction-heated fluid-bed reactor. The mandrels were free to float randomly through the bed, and using the reaction WF 6 +3H 2 →/sub /KW +6HF, very fine-grained tungsten was deposited onto the surface at a rate and in a grain size determined by temperature, gas flow rate, system pressure, and duration of the reaction. After coating, a portion of each mandrel was exposed by hole drilling or grinding. The mandrel was then removed by acid leaching, leaving a freestanding tungsten shape. Experimental procedures, mandrel preparation, and results obtained are discussed

Tungsten/copper composite deposits produced by a cold spray

International Nuclear Information System (INIS)

Kang, Hyun-Ki; Kang, Suk Bong

2003-01-01

An agglomerated tungsten/copper composite powder was both cold sprayed and plasma sprayed onto a mild steel substrate for electronic package applications. Most pores resulting from the spraying were found in the vicinity of the tungsten-rich regions of the final product. The levels of porosity varied with the amount of tungsten present. No copper oxidation was found at the cold-sprayed deposit, but relatively high copper oxidation was observed at the plasma-sprayed deposit

Granite-related Yangjiashan tungsten deposit, southern China

Science.gov (United States)

Xie, Guiqing; Mao, Jingwen; Li, Wei; Fu, Bin; Zhang, Zhiyuan

2018-04-01

The Yangjiashan scheelite-bearing deposit (38,663 metric tons of WO3 with an average ore grade of 0.70% WO3) is hosted in quartz veins in a biotite monzogranite intrusion and surrounding slate in the Xiangzhong Metallogenic Province of southern China. The monzogranite has a zircon SHRIMP U-Pb age of 406.6 ± 2.8 Ma (2σ, n = 20, MSWD = 1.4). Cassiterite coexisting with scheelite yields a weighted mean 206Pb/238U age of 409.8 ± 5.9 Ma (2σ, n = 30, MSWD = 0.20), and molybdenite intergrown with scheelite yields a weighted mean Re-Os age of 404.2 ± 3.2 Ma (2σ, n = 3, MSWD = 0.10). These results suggest that the Yangjiashan tungsten deposit is temporally related to the Devonian intrusion. The δD and calculated δ18OH2O values of quartz intergrown with scheelite range from - 87 to - 68‰, and - 1.2 to 3.4‰, respectively. Sulfides have a narrow range of δ34S values of - 2.9 to - 0.7‰ with an average value of - 1.6‰ (n = 16). The integration of geological, stable isotope, and geochronological data, combined with the quartz-muscovite greisen style of ore, supports a magmatic-hydrothermal origin for the tungsten mineralization. Compared to the more common tungsten skarn, quartz-wolframite vein, and porphyry tungsten deposits, as well as orogenic gold deposits worldwide, the Yangjiashan tungsten deposit is an unusual example of a granite-related, gold-poor, scheelite-bearing quartz vein type of deposit. The calcium needed for the formation of scheelite is derived from the sericitization of calcic plagioclase in the monzogranite and Ca-bearing psammitic country rocks, and the relatively high pH, reduced and Ca-rich mineralizing fluid may be the main reasons for the formation of scheelite rather than wolframite at Yangjiashan.

New doped tungsten cathodes. Applications to power grid tubes

International Nuclear Information System (INIS)

Cachard, J. de; Cadoret, K; Martinez, L.; Veillet, D.; Millot, F.

2001-01-01

Thermionic emission behavior of tungsten/tungsten carbide modified with rare earth (La, Ce, Y) oxides is examined on account of suitability to deliver important current densities in a thermo-emissive set up and for long lifetime. Work functions of potential cathodes have been determined from Richardson plots for La 2 O 3 doped tungsten and for tungsten covered with variable compositions rare earth tungstates. The role of platinum layers covering the cathode was also examined. Given all cathodes containing mainly lanthanum oxides were good emitters, emphasis was put on service lifetime. Comparisons of lifetime in tungsten doped with rare earth oxides and with rare earth tungstates show that microstructure of the operating cathodes may play the major role in the research of very long lifetime cathodes. Based on these results, tests still running show lifetime compatible with power grid tubes applications. (author)

Numerical simulation of the effects of dilution level, depth of inhalation, and smoke composition on nicotine vapor deposition during cigarette smoking.

Science.gov (United States)

Ingebrethsen, Bradley J

2006-12-01

A numerical model of an aerosol containing vaporizable nicotine depositing to the walls of a tube was developed and applied to simulate the vapor deposition of nicotine in a denuder tube and under conditions approximating those in the respiratory tract during mainstream cigarette smoke inhalation. The numerical model was validated by comparison to data for denuder tube collection of nicotine from the smoke of three types of cigarette differing in smoke acidity and nicotine volatility. Simulations predict that the absorption of water by aerosol particles inhibits nicotine vapor deposition to tube walls, and that increased temperature, decreased tube diameter, and increased dilution enhance nicotine vapor deposition rate. The combined effect of changing these four parameters to approximate the transition from conducting to gas exchange regions of the respiratory tract was a significant net increase in predicted nicotine vapor deposition rate. Comparisons of nicotine deposition rates between conditions in the conducting airways and those in the gas exchange region were informative with regard to reported nicotine retention measurements during human smoking. Reports that vaporizable nicotine can penetrate past the conducting airways, that nicotine can be retained at near 100% efficiency from mainstream smoke, and that cigarettes with differing acidity and nicotine volatility have similar nicotine uptake rates are all shown to be consistent with the results of the model simulations.

Growth of aligned ZnO nanowires via modified atmospheric pressure chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Zhao, Yuping; Li, Chengchen [Faculty of Science, Jiangsu University, Zhenjiang, Jiangsu, 212013 (China); Chen, Mingming, E-mail: andychain@live.cn [Faculty of Science, Jiangsu University, Zhenjiang, Jiangsu, 212013 (China); Yu, Xiao; Chang, Yunwei [Faculty of Science, Jiangsu University, Zhenjiang, Jiangsu, 212013 (China); Chen, Anqi [State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics & Information Technology, Sun Yat-Sen University, Guangzhou Higher Education Mega Center (University Town), Guangzhou, 510006 (China); Zhu, Hai, E-mail: zhuhai5@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics & Information Technology, Sun Yat-Sen University, Guangzhou Higher Education Mega Center (University Town), Guangzhou, 510006 (China); Tang, Zikang, E-mail: zktang@umac.mo [State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics & Information Technology, Sun Yat-Sen University, Guangzhou Higher Education Mega Center (University Town), Guangzhou, 510006 (China); The Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau (China)

2016-12-09

In this work, we report the growth of high-quality aligned ZnO nanowires via a facile atmospheric pressure chemical vapor deposition (CVD) method. The CVD reactor chamber used was more complicated than a conventional one due to the quartz boats loaded with sources (ZnO/C) and substrates being inserted into a semi-open quartz tube, and then placed inside the CVD reactor. The semi-open quartz tube played a very important role in growing the ZnO nanowires, and demonstrated that the transportation properties of Zn and O vapor differ from those in the conventional CVD reactor chamber. Aligned ZnO nanowires were successfully obtained, though they were only found at substrates located upstream. The very high crystalline quality of the obtained ZnO nanowires was demonstrated by high-resolution transmission electron microscopy and room temperature photoluminescence investigations. Such ZnO nanowires with high crystalline quality may provide opportunities for the fabrication of ZnO-based nano-devices in future. - Highlights: • High-quality aligned ZnO nanowires were obtained via modified chemical vapor deposition under atmospheric pressure. • The semi-open quartz tube plays very important roles in growing ZnO nanowires. • The transportation properties of Zn and O vapor differ from those in the conventional CVD reactor chamber.

Growth of aligned ZnO nanowires via modified atmospheric pressure chemical vapor deposition

International Nuclear Information System (INIS)

Zhao, Yuping; Li, Chengchen; Chen, Mingming; Yu, Xiao; Chang, Yunwei; Chen, Anqi; Zhu, Hai; Tang, Zikang

2016-01-01

In this work, we report the growth of high-quality aligned ZnO nanowires via a facile atmospheric pressure chemical vapor deposition (CVD) method. The CVD reactor chamber used was more complicated than a conventional one due to the quartz boats loaded with sources (ZnO/C) and substrates being inserted into a semi-open quartz tube, and then placed inside the CVD reactor. The semi-open quartz tube played a very important role in growing the ZnO nanowires, and demonstrated that the transportation properties of Zn and O vapor differ from those in the conventional CVD reactor chamber. Aligned ZnO nanowires were successfully obtained, though they were only found at substrates located upstream. The very high crystalline quality of the obtained ZnO nanowires was demonstrated by high-resolution transmission electron microscopy and room temperature photoluminescence investigations. Such ZnO nanowires with high crystalline quality may provide opportunities for the fabrication of ZnO-based nano-devices in future. - Highlights: • High-quality aligned ZnO nanowires were obtained via modified chemical vapor deposition under atmospheric pressure. • The semi-open quartz tube plays very important roles in growing ZnO nanowires. • The transportation properties of Zn and O vapor differ from those in the conventional CVD reactor chamber.

Tubing For Sampling Hydrazine Vapor

Science.gov (United States)

Travis, Josh; Taffe, Patricia S.; Rose-Pehrsson, Susan L.; Wyatt, Jeffrey R.

1993-01-01

Report evaluates flexible tubing used for transporting such hypergolic vapors as those of hydrazines for quantitative analysis. Describes experiments in which variety of tubing materials, chosen for their known compatibility with hydrazine, flexibility, and resistance to heat.

Chemical vapor deposited fiber coatings and chemical vapor infiltrated ceramic matrix composites

Energy Technology Data Exchange (ETDEWEB)

Kmetz, M.A.

1992-01-01

Conventional Chemical Vapor Deposition (CVD) and Organometallic Chemical Vapor Deposition (MOCVD) were employed to deposit a series of interfacial coatings on SiC and carbon yarn. Molybdenum, tungsten and chromium hexacarbonyls were utilized as precursors in a low temperature (350[degrees]C) MOCVD process to coat SiC yarn with Mo, W and Cr oxycarbides. Annealing studies performed on the MoOC and WOC coated SiC yarns in N[sub 2] to 1,000[degrees]C establish that further decomposition of the oxycarbides occurred, culminating in the formation of the metals. These metals were then found to react with Si to form Mo and W disilicide coatings. In the Cr system, heating in N[sub 2] above 800[degrees]C resulted in the formation of a mixture of carbides and oxides. Convention CVD was also employed to coat SiC and carbon yarn with C, Bn and a new interface designated BC (a carbon-boron alloy). The coated tows were then infiltrated with SiC, TiO[sub 2], SiO[sub 2] and B[sub 4]C by a chemical vapor infiltration process. The B-C coatings were found to provide advantageous interfacial properties over carbon and BN coatings in several different composite systems. The effectiveness of these different coatings to act as a chemically inert barrier layer and their relationship to the degree of interfacial debonding on the mechanical properties of the composites were examined. The effects of thermal stability and strength of the coated fibers and composites were also determined for several difference atmospheres. In addition, a new method for determining the tensile strength of the as-received and coated yarns was also developed. The coated fibers and composites were further characterized by AES, SEM, XPS, IR and X-ray diffraction analysis.

Chemically deposited tungsten fibre-reinforced tungsten – The way to a mock-up for divertor applications

Directory of Open Access Journals (Sweden)

J. Riesch

2016-12-01

Full Text Available The development of advanced materials is essential for sophisticated energy systems like a future fusion reactor. Tungsten fibre-reinforced tungsten composites (Wf/W utilize extrinsic toughening mechanisms and therefore overcome the intrinsic brittleness of tungsten at low temperature and its sensitivity to operational embrittlement. This material has been successfully produced and tested during the last years and the focus is now put on the technological realisation for the use in plasma facing components of fusion devices. In this contribution, we present a way to utilize Wf/W composites for divertor applications by a fabrication route based on the chemical vapour deposition (CVD of tungsten. Mock-ups based on the ITER typical design can be realized by the implementation of Wf/W tiles. A concept based on a layered deposition approach allows the production of such tiles in the required geometry. One fibre layer after the other is positioned and ingrown into the W-matrix until the final sample size is reached. Charpy impact tests on these samples showed an increased fracture energy mainly due to the ductile deformation of the tungsten fibres. The use of Wf/W could broaden the operation temperature window of tungsten significantly and mitigate problems of deep cracking occurring typically in cyclic high heat flux loading. Textile techniques are utilized to optimise the tungsten wire positioning and process speed of preform production. A new device dedicated to the chemical deposition of W enhances significantly, the available machine time for processing and optimisation. Modelling shows that good deposition results are achievable by the use of a convectional flow and a directed temperature profile in an infiltration process.

A thermodynamic approach on vapor-condensation of corrosive salts from flue gas on boiler tubes in waste incinerators

International Nuclear Information System (INIS)

Otsuka, Nobuo

2008-01-01

Thermodynamic equilibrium calculation was conducted to understand the effects of tube wall temperature, flue gas temperature, and waste chemistry on the type and amount of vapor-condensed 'corrosive' salts from flue gas on superheater and waterwall tubes in waste incinerators. The amount of vapor-condensed compounds from flue gases at 650-950 deg. C on tube walls at 350-850 deg. C was calculated, upon combustion of 100 g waste with 1.6 stoichiometry (in terms of the air-fuel ratio). Flue gas temperature, rather than tube wall temperature, influenced the deposit chemistry of boiler tubes significantly. Chlorine, sulfur, sodium, potassium, and calcium contents in waste affected it as well

Hydrogen and helium trapping in tungsten deposition layers formed by RF plasma sputtering

International Nuclear Information System (INIS)

Kazunari Katayama; Kazumi Imaoka; Takayuki Okamura; Masabumi Nishikawa

2006-01-01

Understanding of tritium behavior in plasma facing materials is an important issue for fusion reactor from viewpoints of fuel control and radiation safety. Tungsten is used as a plasma facing material in the divertor region of ITER. However, investigation of hydrogen isotope behavior in tungsten deposition layer is not sufficient so far. It is also necessary to evaluate an effect of helium on a formation of deposition layer and an accumulation of hydrogen isotopes because helium generated by fusion reaction exists in fusion plasma. In this study, tungsten deposition layers were formed by sputtering method using hydrogen and helium RF plasma. An erosion rate and a deposition rate of tungsten were estimated by weight measurement. Hydrogen and helium retention were investigated by thermal desorption method. Tungsten deposition was performed using a capacitively-coupled RF plasma device equipped with parallel-plate electrodes. A tungsten target was mounted on one electrode which is supplied with RF power at 200 W. Tungsten substrates were mounted on the other electrode which is at ground potential. The plasma discharge was continued for 120 hours where pressure of hydrogen or helium was controlled to be 10 Pa. The amounts of hydrogen and helium released from deposition layers was quantified by a gas chromatograph. The erosion rate of target tungsten under helium plasma was estimated to be 1.8 times larger than that under hydrogen plasma. The deposition rate on tungsten substrate under helium plasma was estimated to be 4.1 times larger than that under hydrogen plasma. Atomic ratio of hydrogen to tungsten in a deposition layer formed by hydrogen plasma was estimated to be 0.17 by heating to 600 o C. From a deposition layer formed by helium plasma, not only helium but also hydrogen was released by heating to 500 o C. Atomic ratios of helium and hydrogen to tungsten were estimated to be 0.080 and 0.075, respectively. The trapped hydrogen is probably impurity hydrogen

Hydrogen retention in carbon-tungsten co-deposition layer formed by hydrogen RF plasma

International Nuclear Information System (INIS)

Katayama, K.; Kawasaki, T.; Manabe, Y.; Nagase, H.; Takeishi, T.; Nishikawa, M.

2006-01-01

Carbon-tungsten co-deposition layers (C-W layers) were formed by sputtering method using hydrogen or deuterium RF plasma. The deposition rate of the C-W layer by deuterium plasma was faster than that by hydrogen plasma, where the increase of deposition rate of tungsten was larger than that of carbon. This indicates that the isotope effect on sputtering-depositing process for tungsten is larger than that for carbon. The release curve of hydrogen from the C-W layer showed two peaks at 400 deg. C and 700 deg. C. Comparing the hydrogen release from the carbon deposition layer and the tungsten deposition layer, it is considered that the increase of the release rate at 400 deg. C is affected by tungsten and that at 700 deg. C is affected by carbon. The obtained hydrogen retention in the C-W layers which have over 60 at.% of carbon was in the range between 0.45 and 0.16 as H/(C + W)

Impact of residual by-products from tungsten film deposition on process integration due to nonuniformity of the tungsten film

CERN Document Server

Sidhwa, A; Gandy, T; Melosky, S; Brown, W; Ang, S; Naseem, H; Ulrich, R

2002-01-01

The effects of residual by products from a tungsten film deposition process and their impact on process integration due to the nonuniformity of the tungsten film were investigated in this work. The tungsten film deposition process involves three steps: nucleation, stabilization, and tungsten bulk fill. Six experiments were conducted in search for a solution to the problem. The resulting data suggest that excess nitrogen left in the chamber following the tungsten nucleation step, along with residual by products, causes a shift in the tungsten film uniformity during the tungsten bulk fill process. Data reveal that, due to the residual by products, an abnormal grain growth occurs causing a variation in the tungsten thickness across the wafer during the bulk fill step. Although several possible solutions were revealed by the experiments, potential integration problems limited the acceptable solutions to one. The solution chosen was the introduction of a 10 s pumpdown immediately following the nucleation step. Thi...

Hydrogen gas driven permeation through tungsten deposition layer formed by hydrogen plasma sputtering

International Nuclear Information System (INIS)

Uehara, Keiichiro; Katayama, Kazunari; Date, Hiroyuki; Fukada, Satoshi

2015-01-01

Highlights: • H permeation tests for W layer formed by H plasma sputtering are performed. • H permeation flux through W layer is larger than that through W bulk. • H diffusivity in W layer is smaller than that in W bulk. • The equilibrium H concentration in W layer is larger than that in W bulk. - Abstract: It is important to evaluate the influence of deposition layers formed on plasma facing wall on tritium permeation and tritium retention in the vessel of a fusion reactor from a viewpoint of safety. In this work, tungsten deposition layers having different thickness and porosity were formed on circular nickel plates by hydrogen RF plasma sputtering. Hydrogen permeation experiment was carried out at the temperature range from 250 °C to 500 °C and at hydrogen pressure range from 1013 Pa to 101,300 Pa. The hydrogen permeation flux through the nickel plate with tungsten deposition layer was significantly smaller than that through a bare nickel plate. This indicates that a rate-controlling step in hydrogen permeation was not permeation through the nickel plate but permeation though the deposition layer. The pressure dependence on the permeation flux differed by temperature. Hydrogen permeation flux through tungsten deposition layer is larger than that through tungsten bulk. From analysis of the permeation curves, it was indicated that hydrogen diffusivity in tungsten deposition layer is smaller than that in tungsten bulk and the equilibrium hydrogen concentration in tungsten deposition layer is enormously larger than that in tungsten bulk at same hydrogen pressure.

Vapor deposition of tantalum and tantalum compounds

International Nuclear Information System (INIS)

Trkula, M.

1996-01-01

Tantalum, and many of its compounds, can be deposited as coatings with techniques ranging from pure, thermal chemical vapor deposition to pure physical vapor deposition. This review concentrates on chemical vapor deposition techniques. The paper takes a historical approach. The authors review classical, metal halide-based techniques and current techniques for tantalum chemical vapor deposition. The advantages and limitations of the techniques will be compared. The need for new lower temperature processes and hence new precursor chemicals will be examined and explained. In the last section, they add some speculation as to possible new, low-temperature precursors for tantalum chemical vapor deposition

Tungsten Deposition on Graphite using Plasma Enhanced Chemical Vapour Deposition

International Nuclear Information System (INIS)

Sharma, Uttam; Chauhan, Sachin S; Sharma, Jayshree; Sanyasi, A K; Ghosh, J; Choudhary, K K; Ghosh, S K

2016-01-01

The tokamak concept is the frontrunner for achieving controlled thermonuclear reaction on earth, an environment friendly way to solve future energy crisis. Although much progress has been made in controlling the heated fusion plasmas (temperature ∼ 150 million degrees) in tokamaks, technological issues related to plasma wall interaction topic still need focused attention. In future, reactor grade tokamak operational scenarios, the reactor wall and target plates are expected to experience a heat load of 10 MW/m 2 and even more during the unfortunate events of ELM's and disruptions. Tungsten remains a suitable choice for the wall and target plates. It can withstand high temperatures, its ductile to brittle temperature is fairly low and it has low sputtering yield and low fuel retention capabilities. However, it is difficult to machine tungsten and hence usages of tungsten coated surfaces are mostly desirable. To produce tungsten coated graphite tiles for the above-mentioned purpose, a coating reactor has been designed, developed and made operational at the SVITS, Indore. Tungsten coating on graphite has been attempted and successfully carried out by using radio frequency induced plasma enhanced chemical vapour deposition (rf -PECVD) for the first time in India. Tungsten hexa-fluoride has been used as a pre-cursor gas. Energy Dispersive X-ray spectroscopy (EDS) clearly showed the presence of tungsten coating on the graphite samples. This paper presents the details of successful operation and achievement of tungsten coating in the reactor at SVITS. (paper)

Real time monitoring of filament-assisted chemically vapor deposited diamond by spectroscopic ellipsometry

International Nuclear Information System (INIS)

Yue Cong; An, I.; Vedam, K.; Collins, R.W.; Nguyen, H.V.; Messier, R.

1991-01-01

Spectroscopic ellipsometry over the range 1.5-4.5 eV was applied as a real time probe of the processes occurring in the initial nucleation of thin film diamond by heated-filament assisted chemical vapor deposition. Using both untreated and diamond-polished c-Si substrates, as well as both carburized and uncarburized tungsten filaments, it was possible to separate and characterize competing phenomena, including the increase in surface temperature induced by filament ignition, the formation of carbide layers, contamination of the substrate by tungsten from the filament, annealing of diamond polishing damage, and, finally, diamond nucleation. An accurate measurement of the true temperature of the substrate surface averaged over the top 500 A can be obtained from the energy position of critical points in the c-Si band structure. For diamond deposition, we operated with an initial excess flow of CH 4 to stimulate nucleation. We applied real time feedback and manual control to reduce the CH 4 flow in the first monolayers of deposition. The thickness of diamond and an estimate of its nucleation density can be obtained from real time spectra, and the latter was in good agreement with that obtained from scanning electron microscopy. (orig.)

Method for deposition of a conductor in integrated circuits

Science.gov (United States)

Creighton, J. Randall; Dominguez, Frank; Johnson, A. Wayne; Omstead, Thomas R.

1997-01-01

A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten.

Direct Fabrication of Carbon Nanotubes STM Tips by Liquid Catalyst-Assisted Microwave Plasma-Enhanced Chemical Vapor Deposition

Directory of Open Access Journals (Sweden)

Fa-Kuei Tung

2009-01-01

Full Text Available Direct and facile method to make carbon nanotube (CNT tips for scanning tunneling microscopy (STM is presented. Cobalt (Co particles, as catalysts, are electrochemically deposited on the apex of tungsten (W STM tip for CNT growth. It is found that the quantity of Co particles is well controlled by applied DC voltage, concentration of catalyst solution, and deposition time. Using optimum growth condition, CNTs are successfully synthesized on the tip apex by catalyst-assisted microwave-enhanced chemical vapor deposition (CA-MPECVD. A HOPG surface is clearly observed at an atomic scale using the present CNT-STM tip.

Ion vapor deposition and its application

International Nuclear Information System (INIS)

Bollinger, H.; Schulze, D.; Wilberg, R.

1981-01-01

Proceeding from the fundamentals of ion vapor deposition the characteristic properties of ion-plated coatings are briefly discussed. Examples are presented of successful applications of ion-plated coatings such as coatings with special electrical and dielectric properties, coatings for corrosion prevention, and coatings for improving the surface properties. It is concluded that ion vapor deposition is an advantageous procedure in addition to vapor deposition. (author)

Tungsten coatings electro-deposited on CFC substrates from oxide molten salt

Energy Technology Data Exchange (ETDEWEB)

Sun, Ningbo; Zhang, Yingchun, E-mail: zycustb@163.com; Lang, Shaoting; Jiang, Fan; Wang, Lili

2014-12-15

Tungsten is considered as plasma facing material in fusion devices because of its high melting point, its good thermal conductivity, its low erosion rate and its benign neutron activation properties. On the other hand, carbon based materials like C/C fiber composites (CFC) have been used for plasma facing materials (PFMs) due to their high thermal shock resistance, light weight and high strength. Tungsten coatings on CFC substrates are used in the JET divertor in the frame of the JET ITER-like wall project, and have been prepared by plasma spray (PS) and other techniques. In this study, tungsten coatings were electro-deposited on CFC from Na{sub 2}WO{sub 4}–WO{sub 3} molten salt under various deposition parameters at 900 °C in air. In order to obtain tungsten coatings with excellent performance, the effects of pulse duration ratio and pulse current density on microstructures and crystal structures of tungsten coatings were investigated by X-ray diffraction (XRD, Rigaku Industrial Co., Ltd., D/MAX-RB) and a scanning electron microscope (SEM, JSM 6480LV). It is found that the pulsed duration ratio and pulse current density had a significant influence on tungsten nucleation and electro-crystallization phenomena. SEM observation revealed that intact, uniform and dense tungsten coatings formed on the CFC substrates. Both the average grain size and thickness of the coating increased with the pulsed current density. The XRD results showed that the coatings consisted of a single phase of tungsten with the body centered cubic (BCC) structure. The oxygen content of electro-deposited tungsten coatings was lower than 0.05%, and the micro-hardness was about 400 HV.

Deuterium trapping in tungsten deposition layers formed by deuterium plasma sputtering

International Nuclear Information System (INIS)

Alimov, V.Kh.; Roth, J.; Shu, W.M.; Komarov, D.A.; Isobe, K.; Yamanishi, T.

2010-01-01

A study of the influence of the deposition conditions on the surface morphology and deuterium (D) concentration in tungsten (W) deposition layers formed by magnetron sputtering and in the linear plasma generator has been carried out. Thick W layers (≥0.4 μm) deposited onto copper substrates demonstrate areas of pilling and, after post-deposition heating to 1300 K, flaking-off and fracturing. For thin W layers (≤80 nm) deposited onto stainless steel (SS) and W substrates, no areas of flaking-off and fracturing exist both after deposition and after post-deposition heating to 673 K for the SS substrate and to 1300 K for the W substrate. The concentration of deuterium in the W layers was found to decrease with increasing substrate temperature and with increasing tungsten deposition rate. For layers with relatively high concentration of oxygen (0.20-0.60 O/W), a decrease of the D concentration with increasing substrate temperature is more pronounced than that for layers deposited in good vacuum conditions. To describe the evolution of the D/W ratio with the substrate temperature and the tungsten deposition rate, an empirical equation proposed by De Temmerman and Doerner [J. Nucl. Mater. 389 (2009) 479] but with alternative parameters has been used.

Physical mechanisms related to the degradation of LPCVD tungsten contacts at elevated temperatures

International Nuclear Information System (INIS)

Shenai, K.; Lewis, N.; Smith, G.A.; McConnell, M.D.; Burrell, M.

1990-01-01

The thermal stability of LPCVD (low pressure chemical vapor deposition) tungsten contacts to n-type silicon is studied at elevated temperatures in excess of 650 degrees C. The process variants studied include silicon doping, tungsten thickness, and post tungsten deposition dielectric stress temperatures. Detailed measurements of Kelvin contact resistance were made at room temperature as well as at elevated temperatures up to 165 degrees C. The tungsten contact resistance degradation at elevated stress temperatures is correlated with worm hole formation in silicon and the formation and diffusion of tungsten silicide. Extensive analytical measurements were used to characterize the material transformation at elevated stress temperatures to understand the physical mechanisms causing contact degradation

Perspective: Highly stable vapor-deposited glasses

Science.gov (United States)

Ediger, M. D.

2017-12-01

This article describes recent progress in understanding highly stable glasses prepared by physical vapor deposition and provides perspective on further research directions for the field. For a given molecule, vapor-deposited glasses can have higher density and lower enthalpy than any glass that can be prepared by the more traditional route of cooling a liquid, and such glasses also exhibit greatly enhanced kinetic stability. Because vapor-deposited glasses can approach the bottom of the amorphous part of the potential energy landscape, they provide insights into the properties expected for the "ideal glass." Connections between vapor-deposited glasses, liquid-cooled glasses, and deeply supercooled liquids are explored. The generality of stable glass formation for organic molecules is discussed along with the prospects for stable glasses of other types of materials.

Enhanced properties of tungsten thin films deposited with a novel HiPIMS approach

Science.gov (United States)

Velicu, Ioana-Laura; Tiron, Vasile; Porosnicu, Corneliu; Burducea, Ion; Lupu, Nicoleta; Stoian, George; Popa, Gheorghe; Munteanu, Daniel

2017-12-01

Despite the tremendous potential for industrial use of tungsten (W), very few studies have been reported so far on controlling and tailoring the properties of W thin films obtained by physical vapor deposition techniques and, even less, for those deposited by High Power Impulse Magnetron Sputtering (HiPIMS). This study presents results on the deposition process and properties characterization of nanocrystalline W thin films deposited on silicon and molybdenum substrates (100 W average sputtering power) by conventional dc magnetron sputtering (dcMS) and HiPIMS techniques. Topological, structural, mechanical and tribological properties of the deposited thin films were investigated. It was found that in HiPIMS, both deposition process and coatings properties may be optimized by using an appropriate magnetic field configuration and pulsing design. Compared to the other deposited samples, the W films grown in multi-pulse (5 × 3 μs) HiPIMS assisted by an additional magnetic field, created with a toroidal-shaped permanent magnet placed in front of the magnetron cathode, show significantly enhanced properties, such as: smoother surfaces, higher homogeneity and denser microstructure, higher hardness and Young's modulus values, better adhesion to the silicon substrate and lower coefficient of friction. Mechanical behaviour and structural changes are discussed based on plasma diagnostics results.

Influence of boron vapor on transport behavior of deposited CsI during heating test simulating a BWR severe accident condition

Energy Technology Data Exchange (ETDEWEB)

Sato, Isamu, E-mail: sato.isamu@jaea.go.jp; Onishi, Takashi; Tanaka, Kosuke; Iwasaki, Maho; Koyama, Shin-ichi

2015-06-15

In order to evaluate influence of B on the release and transport of Cs and I during severe accidents, basic experiments have been performed on the interaction between deposited Cs/I compounds and vapor/aerosol B compounds. CsI and B{sub 2}O{sub 3} were utilized as a Cs/I compound and a B compound, respectively. Deposited CsI on the thermal gradient tube (TGT) at temperatures ranging from 423 K to 1023 K was reacted with vapor/aerosol B{sub 2}O{sub 3}, and then observed how it changed Cs/I deposition profiles. As a result, vapor/aerosol B{sub 2}O{sub 3} stripped a portion of deposited CsI within a temperature range from 830 K to 920 K to make gaseous CsBO{sub 2} and I{sub 2}. In addition, gaseous I{sub 2} was re-deposited at a temperature range from 530 K to 740 K, while CsBO{sub 2} travelled through the sampling tubes and filters without deposition. It is evident that B enables Cs compounds such as CsBO{sub 2} to transport Cs to the colder regions.

Thermal plasma chemical vapor deposition

International Nuclear Information System (INIS)

Heberlein, J.; Pfender, E.

1993-01-01

Thermal plasmas, with temperatures up to and even exceeding 10 4 K, are capable of producing high density vapor phase precursors for the deposition of relatively thick films. Although this technology is still in its infancy, it will fill the void between the relatively slow deposition processes such as physical vapor deposition and the high rate thermal spray deposition processes. In this chapter, the present state-of-the-art of this field is reviewed with emphasis on the various types of reactors proposed for this emerging technology. Only applications which attracted particular attention, namely diamond and high T c superconducting film deposition, are discussed in greater detail. (orig.)

Advanced deposition model for thermal activated chemical vapor deposition

Science.gov (United States)

Cai, Dang

reactions on the substrate surface, conductive, convective, inductive and radiative heat transfer, species transport and thereto-elastic stress distributions. Gas phase and surface reactions are studied thermodynamically and kinetically. Based on experimental results, detailed reaction mechanisms are proposed and the deposition rates are predicted. The deposition model proposed could be used for other experiments with similar operating conditions. Four different growth systems are presented in this thesis to discuss comprehensive transport phenomena in crystal growth from vapor. The first is the polysilicon bulk growth by modified Siemens technique in which a silicon tube is used as the starting material. The research effort has been focused on system design, geometric and operating parameters optimization, and heterogeneous and homogeneous silane pyrolysis analysis. The second is the GaN thin film growth by iodine vapor phase epitaxy technique. Heat and mass transport is studied analytically and numerically. Gas phase and surface reactions are analyzed thermodynamically and kinetically. Quasi-equilibrium and kinetic deposition models are developed to predict the growth rate. The third one is the AlN thin film growth by halide vapor phase epitaxy technique. The effects of gas phase and surface reactions on the crystal growth rate and deposition uniformity are studied. The last one is the AlN sublimation growth system. The research effort has been focused on the effect of thermal environment evolution on the crystal growth process. The thermoelastic stress formed in the as-grown AlN crystal is also calculated.

Motion of liquid plugs between vapor bubbles in capillary tubes: a comparison between fluids

Science.gov (United States)

Bertossi, Rémi; Ayel, Vincent; Mehta, Balkrishna; Romestant, Cyril; Bertin, Yves; Khandekar, Sameer

2017-11-01

Pulsating heat pipes (PHP) are now well-known devices in which liquid/vapor slug flow oscillates in a capillary tube wound between hot and cold sources. In this context, this paper focuses on the motion of the liquid plug, trapped between vapor bubbles, moving in capillary tubes, to try to better understand the thermo-physical phenomena involved in such devices. This study is divided into three parts. In the first part, an experimental study presents the evolution of the vapor pressure during the evaporation process of a liquid thin film deposited from a liquid plug flowing in a heated capillary tube: it is found that the behavior of the generated and removed vapor can be very different, according to the thermophysical properties of the fluids. In the second part, a transient model allows to compare, in terms of pressure and duration, the motion of a constant-length liquid plug trapped between two bubbles subjected to a constant difference of vapor pressure: the results highlight that the performances of the four fluids are also very different. Finally, a third model that can be considered as an improvement of the second one, is also presented: here, the liquid slug is surrounded by two vapor bubbles, one subjected to evaporation, the pressure in both bubbles is now a result of the calculation. This model still allows comparing the behaviors of the fluid. Even if our models are quite far from a complete model of a real PHP, results do indicate towards the applicability of different fluids as suitable working fluids for PHPs, particularly in terms of the flow instabilities which they generate.

Ga N nano wires and nano tubes growth by chemical vapor deposition method at different NH{sub 3} flow rate

Energy Technology Data Exchange (ETDEWEB)

Li, P.; Liu, Y.; Meng, X. [Wuhan University, School of Physics and Technology, Key Laboratory of Artificial Micro and Nanostructures of Ministry of Education, Wuhan 430072 (China)

2016-11-01

Ga N nano wires and nano tubes have been successfully synthesized via the simple chemical vapor deposition method. NH{sub 3} flow rate was found to be a crucial factor in the synthesis of different type of Ga N which affects the shape and the diameter of generated Ga N nano structures. X-ray diffraction confirms that Ga N nano wires grown on Si(111) substrate under 900 degrees Celsius and with NH{sub 3} flow rate of 50 sc cm presents the preferred orientation growth in the (002) direction. It is beneficial to the growth of nano structure through catalyst annealing. Transmission electron microscopy and scanning electron microscopy were used to measure the size and structures of the samples. (Author)

Dynamic control of low-Z material deposition and tungsten erosion by strike point sweeping on DIII-D

Directory of Open Access Journals (Sweden)

J. Guterl

2017-08-01

Full Text Available Carbon deposition on tungsten between ELMs was investigated in DIII-D in semi-attached/detached H-mode plasma conditions using fixed outer strike point (OSP positions. Carbon deposition during plasma exposure of tungsten was monitored in-situ by measuring the reflectivity of the tungsten sample surface. No significant carbon deposition, i.e., without strong variations of the reflectivity, was observed during these experiments including discharges at high densities. In contrast, ERO modeling predicts a significant carbon deposition on the tungsten surface for those high density plasma conditions. The surface reflectivity decreases with methane injection, consistent with increased carbon coverage, as expected. The sweeping of OSP leads to a pronounced increase of the surface reflectivity, suggesting that the strike point sweeping may provide an effective means to remove carbon coating from tungsten surface. The ERO modeling however predicts again a regime of carbon deposition for these experiments. The discrepancies between carbon deposition regime predicted by the ERO model and the experimental observations suggest that carbon erosion during ELMs may significantly affect carbon deposition on tungsten.

Precise control of multiwall carbon nanotube diameters using thermal chemical vapor deposition

Science.gov (United States)

Siegal, M. P.; Overmyer, D. L.; Provencio, P. P.

2002-03-01

We grow multiwall carbon nanotube (CNT) films using thermal chemical vapor deposition at atmospheric pressure using a mixture of acetylene and nitrogen from a 4-nm-thick Ni film catalyst. CNTs are characterized using electron microscopy and Rutherford backscattering spectrometry. CNTs grown with this method are extremely uniform in diameter, both throughout the sample and within the lengths of individual tubes. Nanotube outer diameters, ranging from 5-350 nm, and the total deposition of carbon material, increase exponentially with growth temperature from 630 °C-790 °C.

Impurities in chromium deposits produced by electroplating and physical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Dini, J.W.

1994-05-01

Impurity contents in electrodeposited (hexavalent and trivalent) chromium deposits and physically vapor deposited (thermal evaporation, electron beam evaporation and rf-sputtering) were compared. Oxygen is the key impurity obtained in electrodeposited films but it can be minimized in hexavalent plating solutions by operating at high temperature, e. g., 85 C. Electrodeposits produced in trivalent chromium plating solutions and physically vapor deposited films have much higher oxygen contents than electrodeposits produced in hexavalent chromium solutions operated at temperatures around 85 C. Depending on the target material used for physically vapor deposited films, these films can also have high amounts of other impurities.

Manufacturing tungsten monocrystal tubes by electro-spark machining and study of machined surface structure

International Nuclear Information System (INIS)

Abdukarimov, Eh.T.; Ismailov, L.R.; Krakhmalev, V.A.; Fershtat, L.N.

1981-01-01

A technique to manufacture tubes from tungsten monocrystals with low consumption of electrodes has been developed. Regimes of obtaining deep and through holes of different diameters with the productivity of 1 mm/min and with the minimum deviation from cylindrical shape are worked out using a specially designed electric pulse installation. X-ray and metallographical analyses have shown that as a result of electrospark machining a cold hardened layer is formed up to hundreds micrometers thick, pierced by the network of microcracks. Simultaneous use of electrospark and electrochemical machining permitted to manufacture tubes from tungsten monocrystals with non-distorted monocrystal surface and without a network of microcracks

Oxidation Kinetics of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen

Science.gov (United States)

Opila, Elizabeth J.

1994-01-01

The oxidation kinetics of chemically vapor-deposited SiC in dry oxygen and wet oxygen (P(sub H2O) = 0.1 atm) at temperatures between 1200 C and 1400 C were monitored using thermogravimetric analysis. It was found that in a clean environment, 10% water vapor enhanced the oxidation kinetics of SiC only very slightly compared to rates found in dry oxygen. Oxidation kinetics were examined in terms of the Deal and Grove model for oxidation of silicon. It was found that in an environment containing even small amounts of impurities, such as high-purity Al2O3 reaction tubes containing 200 ppm Na, water vapor enhanced the transport of these impurities to the oxidation sample. Oxidation rates increased under these conditions presumably because of the formation of less protective sodium alumino-silicate scales.

Diameter control and emission properties of carbon nanotubes grown using chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Kaatz, F.H.; Siegal, M.P.; Overmyer, D.L.; Provencio, P.P.; Jackson, J.L

2003-01-15

We grow multiwalled carbon nanotubes (CNTs) via thermal chemical vapor deposition from a sputtered 4-nm-thick nickel catalyst film on a tungsten-coated silicon substrate. CNTs grow from a mixture of nitrogen and acetylene gases at temperatures ranging from 630 to 790 deg. C, resulting in CNT outer diameters of 5-350 nm. CNT diameters increase exponentially with temperature. These results define regimes for template growth fabricated in catalytically active anodized aluminum oxide (AAO) with controlled pinhole sizes ranging from 10 to 50 nm. We measure a threshold electron emission field of 3 V/{mu}m and a field enhancement factor {beta}=5230 on randomly oriented 10-nm diameter CNTs.

Diameter control and emission properties of carbon nanotubes grown using chemical vapor deposition

International Nuclear Information System (INIS)

Kaatz, F.H.; Siegal, M.P.; Overmyer, D.L.; Provencio, P.P.; Jackson, J.L.

2003-01-01

We grow multiwalled carbon nanotubes (CNTs) via thermal chemical vapor deposition from a sputtered 4-nm-thick nickel catalyst film on a tungsten-coated silicon substrate. CNTs grow from a mixture of nitrogen and acetylene gases at temperatures ranging from 630 to 790 deg. C, resulting in CNT outer diameters of 5-350 nm. CNT diameters increase exponentially with temperature. These results define regimes for template growth fabricated in catalytically active anodized aluminum oxide (AAO) with controlled pinhole sizes ranging from 10 to 50 nm. We measure a threshold electron emission field of 3 V/μm and a field enhancement factor β=5230 on randomly oriented 10-nm diameter CNTs

Microstructure of vapor deposited coatings on curved substrates

Energy Technology Data Exchange (ETDEWEB)

Rodgers, Theron M.; Zhao, Hengbei; Wadley, Haydn N. G., E-mail: haydn@virginia.edu [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., P.O. Box 400745, Charlottesville, Virginia 22904 (United States)

2015-09-15

Thermal barrier coating systems consisting of a metallic bond coat and ceramic over layer are widely used to extend the life of gas turbine engine components. They are applied using either high-vacuum physical vapor deposition techniques in which vapor atoms rarely experience scattering collisions during propagation to a substrate, or by gas jet assisted (low-vacuum) vapor deposition techniques that utilize scattering from streamlines to enable non-line-of-sight deposition. Both approaches require substrate motion to coat a substrate of complex shape. Here, direct simulation Monte Carlo and kinetic Monte Carlo simulation methods are combined to simulate the deposition of a nickel coating over the concave and convex surfaces of a model airfoil, and the simulation results are compared with those from experimental depositions. The simulation method successfully predicted variations in coating thickness, columnar growth angle, and porosity during both stationary and substrate rotated deposition. It was then used to investigate a wide range of vapor deposition conditions spanning high-vacuum physical vapor deposition to low-vacuum gas jet assisted vapor deposition. The average coating thickness was found to increase initially with gas pressure reaching a maximum at a chamber pressure of 8–10 Pa, but the best coating thickness uniformity was achieved under high vacuum deposition conditions. However, high vacuum conditions increased the variation in the coatings pore volume fraction over the surface of the airfoil. The simulation approach was combined with an optimization algorithm and used to investigate novel deposition concepts to tailor the local coating thickness.

Microstructure of vapor deposited coatings on curved substrates

International Nuclear Information System (INIS)

Rodgers, Theron M.; Zhao, Hengbei; Wadley, Haydn N. G.

2015-01-01

Thermal barrier coating systems consisting of a metallic bond coat and ceramic over layer are widely used to extend the life of gas turbine engine components. They are applied using either high-vacuum physical vapor deposition techniques in which vapor atoms rarely experience scattering collisions during propagation to a substrate, or by gas jet assisted (low-vacuum) vapor deposition techniques that utilize scattering from streamlines to enable non-line-of-sight deposition. Both approaches require substrate motion to coat a substrate of complex shape. Here, direct simulation Monte Carlo and kinetic Monte Carlo simulation methods are combined to simulate the deposition of a nickel coating over the concave and convex surfaces of a model airfoil, and the simulation results are compared with those from experimental depositions. The simulation method successfully predicted variations in coating thickness, columnar growth angle, and porosity during both stationary and substrate rotated deposition. It was then used to investigate a wide range of vapor deposition conditions spanning high-vacuum physical vapor deposition to low-vacuum gas jet assisted vapor deposition. The average coating thickness was found to increase initially with gas pressure reaching a maximum at a chamber pressure of 8–10 Pa, but the best coating thickness uniformity was achieved under high vacuum deposition conditions. However, high vacuum conditions increased the variation in the coatings pore volume fraction over the surface of the airfoil. The simulation approach was combined with an optimization algorithm and used to investigate novel deposition concepts to tailor the local coating thickness

Atomic absorption spectrometry using tungsten and molybdenum tubes as metal atomizer

International Nuclear Information System (INIS)

Kaneco, Satoshi; Katsumata, Hideyuki; Ohta, Kiyohisa; Suzuki, Tohru

2007-01-01

We have developed a metal tube atomizer for the electrothermal atomization atomic absorption spectrometry (ETA-AAS). Tungsten, molybdenum, platinum tube atomizers were used as the metal atomizer for ETA-AAS. The atomization characteristics of various metals using these metal tube atomizers were investigated. The effects of heating rate of atomizer, atomization temperature, pyrolysis temperature, argon purge gas flow rate and hydrogen addition on the atomic absorption signal were investigated for the evaluation of atomization characteristics. Moreover, ETA-AAS with metal tube atomizer has been combined with the slurry-sampling techniques. Ultrasonic slurry-sampling ETA-AAS with metal tube atomizer were effective for the determination of trace metal elements in biological materials, calcium drug samples, herbal medicine samples, vegetable samples and fish samples. Furthermore, a preconcentration method of trace metals involving adsorption on a metal wire has been applied to ETA-AAS with metal tube atomizer. (author)

CONDENSATION OF WATER VAPOR IN A VERTICAL TUBE CONDENSER

Directory of Open Access Journals (Sweden)

Jan Havlík

2015-10-01

Full Text Available This paper presents an analysis of heat transfer in the process of condensation of water vapor in a vertical shell-and-tube condenser. We analyze the use of the Nusselt model for calculating the condensation heat transfer coefficient (HTC inside a vertical tube and the Kern, Bell-Delaware and Stream-flow analysis methods for calculating the shell-side HTC from tubes to cooling water. These methods are experimentally verified for a specific condenser of waste process vapor containing air. The operating conditions of the condenser may be different from the assumptions adopted in the basic Nusselt theory. Modifications to the Nusselt condensation model are theoretically analyzed.

Properties of tungsten films prepared by magnetron sputtering

International Nuclear Information System (INIS)

Ahn, K.Y.; Ting, C.Y.; Brodsky, S.B.; Fryer, P.M.; Davari, B.; Angillelo, J.; Herd, S.R.; Licata, T.

1986-01-01

High-rate magnetron sputtering is a relatively simple process to produce tungsten films with good electrical and mechanical properties, and it offers good uniformity, reproducibility, process flexibility, and high throughput. The purity of the sputtered films is affected by the target purity (cold-pressed 99.95%, chemical vapor deposited 99.99% and cast 99.999%), base pressure, deposition rate, and substrate bias. Typical resistivity in films of 2000 to 3000A thickness deposited on Si, poly-Si, and SiO/sub 2/ ranges from 10 to 12 μΩ-cm, and this may be compared with 6 and 11 μΩ-cm by high-temperature evaporation and chemical vapor deposition, respectively. The presence of biaxial stress caused by substrate scanning was determined by x-ray technique. The sputtered films exhibit high compressive stress when deposited at low Ar pressure. It decreases with increasing pressure, and eventually changes sign to become tensile, and increases further with increasing pressure. Effects of processing parameters on films properties, and a comparison of film properties prepared by evaporation and chemical vapor deposition are discussed

Geochronology, petrogenesis and metallogeny of Piaotang granitoids in the tungsten deposit region of South China

International Nuclear Information System (INIS)

He Zhenyu; Xu Xisheng; Wang Xudong; Yu Yao; Zou Haibo

2010-01-01

The tungsten deposit region of South China is well known as the world's leading tungsten (W) producer. The Piaotang tungsten deposit in the region is such a representative large-scale quartz vein type tungsten polymetallic deposit that is closely associated with granitoids. In the present study we present precise LA-ICP-MS zircon U-Pb dating and LA-MC-ICPMS zircon Hf isotopic data for the samples from exposed quartz diorite body and buried granite stock in the Piaotang tungsten deposit area. Zircon U-Pb dating results indicate that the quartz diorite body was formed in Early Paleozoic time at 439±2 Ma, whereas the granite body was emplaced in EarlyYanshanian time at 158±3 Ma. Both the quartz diorite and granite have negative ε Hf (t) values, with similar two-stage zircon Hf model ages ranging from 1.8 to 2.1 Ga. Through integration of our new data with the isotope data of Precambrian basement rocks in western Cathaysia, we suggest that the Paleoproterozoic Hf model ages (1.8-2.1 Ga) might be an average age which resulted from mixing of continental materials of different ages. Both the Piaotang Early Paleozoic quartz diorite and Early Yanshanian granite are produced by reworking of the heterogeneous Neoproterozoic crust. Our zircon ages, together with the geochemical data and geological features and ore-forming ages of this tungsten deposit, indicate that the buried Early Yanshanian granite, rather than the exposed quartz diorite, is genetically associated with tungsten mineralization. The distinct metallogeny difference between the Piaotang Early Paleozoic quartz diorite and Early Yanshanian granite can be ascribed to the different degrees of magma differentiation. The Early Yanshanian granite is highly differentiated rock and similar to the other W-Sn deposits generating granitoids in South China. The extents of magma differentiation depend on the tectonic setting and the mechanism of magma generation. On the basis of the relationship between two different

Sputtered tungsten-based ternary and quaternary layers for nanocrystalline diamond deposition.

Science.gov (United States)

Walock, Michael J; Rahil, Issam; Zou, Yujiao; Imhoff, Luc; Catledge, Shane A; Nouveau, Corinne; Stanishevsky, Andrei V

2012-06-01

Many of today's demanding applications require thin-film coatings with high hardness, toughness, and thermal stability. In many cases, coating thickness in the range 2-20 microm and low surface roughness are required. Diamond films meet many of the stated requirements, but their crystalline nature leads to a high surface roughness. Nanocrystalline diamond offers a smoother surface, but significant surface modification of the substrate is necessary for successful nanocrystalline diamond deposition and adhesion. A hybrid hard and tough material may be required for either the desired applications, or as a basis for nanocrystalline diamond film growth. One possibility is a composite system based on carbides or nitrides. Many binary carbides and nitrides offer one or more mentioned properties. By combining these binary compounds in a ternary or quaternary nanocrystalline system, we can tailor the material for a desired combination of properties. Here, we describe the results on the structural and mechanical properties of the coating systems composed of tungsten-chromium-carbide and/or nitride. These WC-Cr-(N) coatings are deposited using magnetron sputtering. The growth of adherent nanocrystalline diamond films by microwave plasma chemical vapor deposition has been demonstrated on these coatings. The WC-Cr-(N) and WC-Cr-(N)-NCD coatings are characterized with atomic force microscopy and SEM, X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, and nanoindentation.

Physical Vapor Deposition of Thin Films

Science.gov (United States)

Mahan, John E.

2000-01-01

A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

Design, fabrication and testing of porous tungsten vaporizers for mercury ion thrusters

Science.gov (United States)

Zavesky, R.; Kroeger, E.; Kami, S.

1983-01-01

The dispersions in the characteristics, performance and reliability of vaporizers for early model 30-cm thrusters were investigated. The purpose of the paper is to explore the findings and to discuss the approaches that were taken to reduce the observed dispersion and present the results of a program which validated those approaches. The information that is presented includes porous tungsten materials specifications, a discussion of assembly procedures, and a description of a test program which screens both material and fabrication processes. There are five appendices providing additional detail in the areas of vaporizer contamination, nitrogen flow testing, bubble testing, porosimeter testing, and mercury purity. Four neutralizers, seven cathodes and five main vaporizers were successfully fabricated, tested, and operated on thrusters. Performance data from those devices is presented and indicates extremely repeatable results from using the design and fabrication procedures.

Laser vapor phase deposition of semiconductors

Energy Technology Data Exchange (ETDEWEB)

Karlov, N.V.; Luk' ianchuk, B.S.; Sisakian, E.V.; Shafeev, G.A.

1987-06-01

The pyrolytic effect of IR laser radiation is investigated with reference to the initiation and control of the vapor phase deposition of semiconductor films. By selecting the gas mixture composition and laser emission parameters, it is possible to control the deposition and crystal formation processes on the surface of semiconductors, with the main control action achieved due to the nonadiabatic kinetics of reactions in the gas phase and high temperatures in the laser heating zone. This control mechanism is demonstrated experimentally during the laser vapor deposition of germanium and silicon films from tetrachlorides on single-crystal Si and Ge substrates. 5 references.

Hydrocarbon deposition in gaps of tungsten and graphite tiles in Experimental Advanced Superconducting Tokamak edge plasma parameters

International Nuclear Information System (INIS)

Xu Qian; Yang Zhongshi; Luo Guangnan

2015-01-01

The three-dimensional (3D) Monte Carlo code PIC-EDDY has been utilized to investigate the mechanism of hydrocarbon deposition in gaps of tungsten tiles in the Experimental Advanced Superconducting Tokamak (EAST), where the sheath potential is calculated by the 2D in space and 3D in velocity particle-in-cell method. The calculated results for graphite tiles using the same method are also presented for comparison. Calculation results show that the amount of carbon deposited in the gaps of carbon tiles is three times larger than that in the gaps of tungsten tiles when the carbon particles from re-erosion on the top surface of monoblocks are taken into account. However, the deposition amount is found to be larger in the gaps of tungsten tiles at the same CH 4 flux. When chemical sputtering becomes significant as carbon coverage on tungsten increases with exposure time, the deposition inside the gaps of tungsten tiles would be considerable. (author)

On the Genesis and Mineralization of the Tungsten Deposit Uludağ

Directory of Open Access Journals (Sweden)

G. van der KAADEN

1958-06-01

Full Text Available The tungsten deposit of Uludağ is closely linked with a late tectonic Paleozoic intrusion of a granodiorite - granite - batholith into a series of crystalline rocks and marbles. The deposit is located in a marble syncline folded into the granite. It is the tectonic structure of this syncline that controlled the location and the shape of the deposit. The mineralization took place after the granite of the border-zone was more or less solidified. High-temperature solutions and volatiles acted with the wall-rock along cracks, bedding-and shearing planes and resulted in the formation of tungsten-bearing sheets of tactile in the marble syncline and in the mineralization of a brecciated zone on both sides of the contact between marble and granite. The sequence of mineralization is discussed

Determination of tungsten target parameters for transmission X-ray tube: A simulation study using Geant4

Energy Technology Data Exchange (ETDEWEB)

Nasseri, Mohammad M. [School of Plasma Physics and Nuclear Fusion, Institute of Nuclear Science and Technology (AEOI), Tehran (Iran, Islamic Republic of)

2016-06-15

Transmission X-ray tubes based on carbon nanotube have attracted significant attention recently. In most of these tubes, tungsten is used as the target material. In this article, the well-known simulator Geant4 was used to obtain some of the tungsten target parameters. The optimal thickness for maximum production of usable X-rays when the target is exposed to electron beams of different energies was obtained. The linear variation of optimal thickness of the target for different electron energies was also obtained. The data obtained in this study can be used to design X-ray tubes. A beryllium window was considered for the X-ray tube. The X-ray energy spectra at the moment of production and after passing through the target and window for different electron energies in the 30-110 keV range were also obtained. The results obtained show that with a specific thickness, the target material itself can act as filter, which enables generation of X-rays with a limited energy.

Tungsten chemical vapor deposition characteristics using SiH4 in a single wafer system

International Nuclear Information System (INIS)

Rosler, R.S.; Mendonca, J.; Rice, M.J. Jr.

1988-01-01

Several workers have recently begun using silane as a high-rate, low-temperature alternative to hydrogen for the reduction of WF 6 in the chemical vapor deposition of W. The deposition and film characteristics of both selective and blanket W using this new chemistry are explored in a radiantly heated single wafer system using closed-loop temperature control with a thermocouple in direct contact with the backside of the wafer. Selective W deposition rates of up to 1.5 μm/min were measured over the temperature range 250--550 0 C with blanket W rates typically 2--5 x lower. Resistivity is in the 10--15 μΩcm range at 300 0 C for SiH 4 /WF 6 ratios of 0.2 to 1.0, while above 400 0 C the range is 7.5--8.5 μΩcm. Si content in the W films is quite low at 10 16 to 10 17 atoms/cm 3 . Adhesion to silicon is excellent at temperatures of 350 0 C and above. Selective W using SiH 4 reduction for doped silicon contact fill shows none of the consumption or encroachment problems common to H 2 reduction, although selectivity is more sensitive. Contact resistance for p + and n + silicon contacts are comparable to aluminum controls and to previously published data. Blanket deposition into narrow geometries gives ≥0% step coverage and without keyholes in the 250--450 0 C deposition temperature range. For low-SiH 4 flows, deposition at 500 0 C causes small keyholes, while at 550 0 C even larger keyholes result. At higher SiH 4 flows, keyholes are typically not seen from 250 to 550 0 C

Effect of negative bias on the composition and structure of the tungsten oxide thin films deposited by magnetron sputtering

Science.gov (United States)

Wang, Meihan; Lei, Hao; Wen, Jiaxing; Long, Haibo; Sawada, Yutaka; Hoshi, Yoichi; Uchida, Takayuki; Hou, Zhaoxia

2015-12-01

Tungsten oxide thin films were deposited at room temperature under different negative bias voltages (Vb, 0 to -500 V) by DC reactive magnetron sputtering, and then the as-deposited films were annealed at 500 °C in air atmosphere. The crystal structure, surface morphology, chemical composition and transmittance of the tungsten oxide thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and UV-vis spectrophotometer. The XRD analysis reveals that the tungsten oxide films deposited at different negative bias voltages present a partly crystallized amorphous structure. All the films transfer from amorphous to crystalline (monoclinic + hexagonal) after annealing 3 h at 500 °C. Furthermore, the crystallized tungsten oxide films show different preferred orientation. The morphology of the tungsten oxide films deposited at different negative bias voltages is consisted of fine nanoscale grains. The grains grow up and conjunct with each other after annealing. The tungsten oxide films deposited at higher negative bias voltages after annealing show non-uniform special morphology. Substoichiometric tungsten oxide films were formed as evidenced by XPS spectra of W4f and O1s. As a result, semi-transparent films were obtained in the visible range for all films deposited at different negative bias voltages.

Laser chemical vapor deposition of millimeter scale three-dimensional shapes

Science.gov (United States)

Shaarawi, Mohammed Saad

2001-07-01

Laser chemical vapor deposition (LCVD) has been successfully developed as a technique to synthesize millimeter-scale components directly from the gas phase. Material deposition occurs when heat generated by the interaction of a laser beam with a substrate thermally decomposes the gas precursor. Selective illumination or scanning the laser beam over portions of a substrate forms the single thin layer of material that is the building block of this process. Sequential scanning of the laser in a pre-defined pattern on the substrate and subsequent deposit causes the layers to accumulate forming the three-dimensional shape. The primary challenge encountered in LCVD shape forming is the synthesis of uniform layers. Three deposition techniques are studied to address this problem. The most successful technique, Active Surface Deposition, is based on the premise that the most uniform deposits are created by measuring the deposition surface topology and actively varying the deposition rate in response to features at the deposition surface. Defects observed in the other techniques were significantly reduced or completely eliminated using Active Surface Deposition. The second technique, Constant Temperature Deposition, maintains deposit uniformity through the use of closed-loop modulation of the laser power to sustain a constant surface temperature during deposition. The technique was successful in depositing high quality graphite tubes >2 mm tall from an acetylene precursor and partially successful in depositing SiC + C composite tubes from tetramethylsilane (TMS). The final technique, Constant Power Deposition, is based on the premise that maintaining a uniform power output throughout deposition would result in the formation of uniform layers. Constant Power Deposition failed to form coherent shapes. Additionally, LCVD is studied using a combination of analytic and numerical models to gain insight into the deposition process. Thermodynamic modeling is used to predict the

Molybdenum Tube Characterization report

Energy Technology Data Exchange (ETDEWEB)

Beaux II, Miles Frank [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Usov, Igor Olegovich [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

2017-02-07

Chemical vapor deposition (CVD) techniques have been utilized to produce free-standing molybdenum tubes with the end goal of nuclear fuel clad applications. In order to produce tubes with properties desirable for this application, deposition rates were lowered requiring long deposition durations on the order of 50 hours. Standard CVD methods as well as fluidized-bed CVD (FBCVD) methods were applied towards these objectives. Characterization of the tubes produced in this manner revealed material suitable for fuel clad applications, but lacking necessary uniformity across the length of the tubes. The production of freestanding Mo tubes that possess the desired properties across their entire length represents an engineering challenge that can be overcome in a next iteration of the deposition system.

Low temperature synthesis of Zn nanowires by physical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Schroeder, Philipp; Kast, Michael; Brueckl, Hubert [Austrian Research Centers GmbH ARC, Nano- Systemtechnologies, Donau-City-Strasse 1, A-1220 Wien (Austria)

2007-07-01

We demonstrate catalytic growth of zinc nanowires by physical vapor deposition at modest temperatures of 125-175 C on various substrates. In contrast to conventional approaches using tube furnaces our home-built growth system allows to control the vapor sources and the substrate temperature separately. The silicon substrates were sputter coated with a thin gold layer as metal catalyst. The samples were heated to the growth temperature and subsequently exposed to the zinc vapor at high vacuum conditions. The work pressure was adjusted by the partial pressure of oxygen or argon flow gas. Scanning electron microscopy and atomic force microscopy characterizations revealed that the nanowires exhibit straight, uniform morphology and have diameters in the range of 50-350 nm and lengths up to 70 {mu}m. The Zn nanowires grow independently of the substrates crystal orientation via a catalytic vapor-solid growth mechanism. Since no nanowire formation was observed without gold coating, we expect that the onedimensional growth is initiated by a surface reactive Au seed. ZnO nanowires can be produced in the same preparation chamber by oxidation at 500 C in 1atm (80% Ar, 20% O{sub 2}) for 1 hour. ZnO is highly attractive for sensor applications.

SiC fibre by chemical vapour deposition on tungsten filament

Indian Academy of Sciences (India)

Unknown

SiC fibre by chemical vapour deposition on tungsten filament ... CMCs), in defence and industrial applications. SiC has attractive ... porosity along with chemical purity. This is lacking .... reactor. Since mercury is very toxic it should be removed.

Pulsed Laser Deposition of Tungsten Thin Films on Graphite

International Nuclear Information System (INIS)

Kassem, W.; Tabbal, M.; Roumie, M.

2011-01-01

Thin coatings of Tungsten were deposited on substrates fabricated by pre-depositing graphite thin layers on Si(100) wafers. We ablate pure W target using a 20 ns KrF excimer laser (248 nm) in an Ar ambient. The effect of background gas pressure, substrate temperature, and laser fluence, on the properties of the deposited W layers is studied using several techniques including X-Ray Diffraction, Atomic Force Microscopy, surface profilometry, and Rutherford Back-Scattering spectrometry. Our results indicate that the deposited layers consist of the well-crystallized body-centered-cubic α-W phase with bulk-like properties, particularly for films deposited at a substrate temperature of 450 0 C, laser fluence greater than 400mJ, and pressure of about 10mTorr. (author)

The Design and Use of Tungsten Coated TZM Molybdenum Tile Inserts in the DIII-D Tokamak Divertor

Energy Technology Data Exchange (ETDEWEB)

Murphy, Christopher [General Atomics, San Diego; Nygren, R. E. [Sandia National Laboratories (SNL); Chrobak, C P. [General Atomics, San Diego; Buchenauer, Dean [Sandia National Laboratories (SNL); Holtrop, Kurt [General Atomics, San Diego; Unterberg, Ezekial A. [ORNL; Zach, Mike P. [ORNL

2017-08-01

Future tokamak devices are envisioned to utilize a high-Z metal divertor with tungsten as theleading candidate. However, tokamak experiments with tungsten divertors have seen significantdetrimental effects on plasma performance. The DIII-D tokamak presently has carbon as theplasma facing surface but to study the effect of tungsten on the plasma and its migration aroundthe vessel, two toroidal rows of carbon tiles in the divertor region were modified with high-Zmetal inserts, composed of a molybdenum alloy (TZM) coated with tungsten. A dedicated twoweek experimental campaign was run with the high-Z metal inserts. One row was coated withtungsten containing naturally occurring levels of isotopes. The second row was coated withtungsten where the isotope 182W was enhanced from the natural level of 26% up to greater than90%. The different isotopic concentrations enabled the experiment to differentiate between thetwo different sources of metal migration from the divertor. Various coating methods wereexplored for the deposition of the tungsten coating, including chemical vapor deposition,electroplating, vacuum plasma spray, and electron beam physical vapor deposition. The coatingswere tested to see if they were robust enough to act as a divertor target for the experiment. Testsincluded cyclic thermal heating using a high power laser and high-fluence deuterium plasmabombardment. The issues associate with the design of the inserts (tile installation, thermal stress,arcing, leading edges, surface preparation, etc.), are reviewed. The results of the tests used toselect the coating method and preliminary experimental observations are presented.

An effective approach to synthesize monolayer tungsten disulphide crystals using tungsten halide precursor

International Nuclear Information System (INIS)

Thangaraja, Amutha; Shinde, Sachin M.; Kalita, Golap; Tanemura, Masaki

2016-01-01

The synthesis of large-area monolayer tungsten disulphide (WS 2 ) single crystal is critical for realistic application in electronic and optical devices. Here, we demonstrate an effective approach to synthesize monolayer WS 2 crystals using tungsten hexachloride (WCl 6 ) as a solid precursor in atmospheric chemical vapor deposition process. In this technique, 0.05M solution of WCl 6 in ethanol was drop-casted on SiO 2 /Si substrate to create an even distribution of the precursor, which was reduced and sulfurized at 750 °C in Ar atmosphere. We observed growth of triangular, star-shaped, as well as dendritic WS 2 crystals on the substrate. The crystal geometry evolves with the shape and size of the nuclei as observed from the dendritic structures. These results show that controlling the initial nucleation and growth process, large WS 2 single crystalline monolayer can be grown using the WCl 6 precursor. Our finding shows an easier and effective approach to grow WS 2 monolayer using tungsten halide solution-casting, rather than evaporating the precursor for gas phase reaction

Oxygen Barrier Coating Deposited by Novel Plasma-enhanced Chemical Vapor Deposition

DEFF Research Database (Denmark)

Jiang, Juan; Benter, M.; Taboryski, Rafael Jozef

2010-01-01

We report the use of a novel plasma-enhanced chemical vapor deposition chamber with coaxial electrode geometry for the SiOx deposition. This novel plasma setup exploits the diffusion of electrons through the inner most electrode to the interior samples space as the major energy source. This confi......We report the use of a novel plasma-enhanced chemical vapor deposition chamber with coaxial electrode geometry for the SiOx deposition. This novel plasma setup exploits the diffusion of electrons through the inner most electrode to the interior samples space as the major energy source...... effect of single-layer coatings deposited under different reaction conditions was studied. The coating thickness and the carbon content in the coatings were found to be the critical parameters for the barrier property. The novel barrier coating was applied on different polymeric materials...

Influence of surface morphology and microstructure on performance of CVD tungsten coating under fusion transient thermal loads

Energy Technology Data Exchange (ETDEWEB)

Lian, Youyun, E-mail: lianyy@swip.ac.cn [Southwestern Institute of Physics, Chengdu (China); Liu, Xiang; Wang, Jianbao; Feng, Fan [Southwestern Institute of Physics, Chengdu (China); Lv, Yanwei; Song, Jiupeng [China National R& D Center for Tungsten Technology, Xiamen Tungsten Co. Ltd, 361026 Xiamen (China); Chen, Jiming [Southwestern Institute of Physics, Chengdu (China)

2016-12-30

Highlights: • Thick CVD-W coatingswere deposited at a rapid growth rate. • The polished CVD-W coatings have highly textured structure and exhibited a very strong preferred orientation. • The polished CVD tungsten coatings show superior thermal shock resistance as compared with that of the as-deposited coatings. • The crack formation of the polished CVD-W was almost suppressed at an elevated temperature. - Abstract: Thick tungsten coatings have been deposited by chemical vapor deposition (CVD) at a rapid growth rate. A series of tungsten coatings with different thickness and surface morphology were prepared. The surface morphology, microstructure and preferred orientation of the CVD tungsten coatings were investigated. Thermal shock analyses were performed by using an electron beam facility to study the influence of the surface morphology and the microstructure on the thermal shock resistance of the CVD tungsten coatings. Repetitive (100 pulses) ELMs-like thermal shock loads were applied at various temperatures between room temperature and 600 °C with pulse duration of 1 ms and an absorbed power density of up to 1 GW/m{sup 2}. The results of the tests demonstrated that the specific surface morphology and columnar crystal structure of the CVD tungsten have significant influence on the surface cracking threshold and crack propagation of the materials. The CVD tungsten coatings with a polished surface show superior thermal shock resistance as compared with that of the as-deposited coatings with a rough surface.

Attenuation of concentration fluctuations of water vapor and other trace gases in turbulent tube flow

Directory of Open Access Journals (Sweden)

W. J. Massman

2008-10-01

Full Text Available Recent studies with closed-path eddy covariance (EC systems have indicated that the attenuation of fluctuations of water vapor concentration is dependent upon ambient relative humidity, presumably due to sorption/desorption of water molecules at the interior surface of the tube. Previous studies of EC-related tube attenuation effects have either not considered this issue at all or have only examined it superficially. Nonetheless, the attenuation of water vapor fluctuations is clearly much greater than might be expected from a passive tracer in turbulent tube flow. This study reexamines the turbulent tube flow issue for both passive and sorbing tracers with the intent of developing a physically-based semi-empirical model that describes the attenuation associated with water vapor fluctuations. Toward this end, we develop a new model of tube flow dynamics (radial profiles of the turbulent diffusivity and tube airstream velocity. We compare our new passive-tracer formulation with previous formulations in a systematic and unified way in order to assess how sensitive the passive-tracer results depend on fundamental modeling assumptions. We extend the passive tracer model to the vapor sorption/desorption case by formulating the model's wall boundary condition in terms of a physically-based semi-empirical model of the sorption/desorption vapor fluxes. Finally we synthesize all modeling and observational results into a single analytical expression that captures the effects of the mean ambient humidity and tube flow (Reynolds number on tube attenuation.

Tandem solar cells deposited using hot-wire chemical vapor deposition

NARCIS (Netherlands)

Veen, M.K. van

2003-01-01

In this thesis, the application of the hot-wire chemical vapor deposition (HWCVD) technique for the deposition of silicon thin films is described. The HWCVD technique is based on the dissociation of silicon-containing gasses at the catalytic surface of a hot filament. Advantages of this technique

Achieving uniform layer deposition by atmospheric-pressure plasma-enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Lee, Jae-Ok [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Kang, Woo Seok, E-mail: kang@kimm.re.kr [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Department of Environment & Energy Mechanical Engineering, University of Science & Technology (UST), Daejeon 305-350 (Korea, Republic of); Hur, Min; Lee, Jin Young [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Song, Young-Hoon [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Department of Environment & Energy Mechanical Engineering, University of Science & Technology (UST), Daejeon 305-350 (Korea, Republic of)

2015-12-31

This work investigates the use of plasma-enhanced chemical vapor deposition under atmospheric pressure for achieving uniform layer formation. Electrical and optical measurements demonstrated that the counterbalance between oxygen and precursors maintained the homogeneous discharge mode, while creating intermediate species for layer deposition. Several steps of the deposition process of the layers, which were processed on a stationary stage, were affected by flow stream and precursor depletion. This study showed that by changing the flow streamlines using substrate stage motion uniform layer deposition under atmospheric pressure can be achieved. - Highlights: • Zirconium oxide was deposited by atmospheric-pressure plasma-enhanced chemical vapor deposition. • Homogeneous plasma was maintained by counterbalancing between discharge gas and precursors. • Several deposition steps were observed affected by the gas flow stream and precursor depletion. • Thin film layer was uniformly grown when the substrate underwent a sweeping motion.

Preparation of tungsten coatings on graphite by electro-deposition via Na2WO4–WO3 molten salt system

International Nuclear Information System (INIS)

Sun, Ning-bo; Zhang, Ying-chun; Jiang, Fan; Lang, Shao-ting; Xia, Min

2014-01-01

Highlights: • Tungsten coatings on graphite were firstly obtained by electro-deposition method via Na 2 WO 4 –WO 3 molten salt system. • Uniform and dense tungsten coatings could be easily prepared in each face of the sample, especially the complex components. • The obtained tungsten coatings are with high purity, ultra-low oxygen content (about 0.022 wt%). • Modulate pulse parameters can get tungsten coatings with different thickness and hardness. - Abstract: Tungsten coating on graphite substrate is one of the most promising candidate materials as the ITER plasma facing components. In this paper, tungsten coatings on graphite substrates were fabricated by electro-deposition from Na 2 WO 4 –WO 3 molten salt system at 1173 K in atmosphere. Tungsten coatings with no impurities were successfully deposited on graphite substrates under various pulsed current densities in an hour. By increasing the current density from 60 mA cm −2 to 120 mA cm −2 an increase of the average size of tungsten grains, the thickness and the hardness of tungsten coatings occurs. The average size of tungsten grains can reach 7.13 μm, the thickness of tungsten coating was in the range of 28.8–51 μm, and the hardness of coating was higher than 400 HV. No cracks or voids were observed between tungsten coating and graphite substrate. The oxygen content of tungsten coating is about 0.022 wt%

The potential use of diamond coated tungsten tips as a field ionisation source

Energy Technology Data Exchange (ETDEWEB)

Brown, A.; Prawer, S.; Legge, G.J.F.; Kostidis, L.I. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1996-12-31

Tungsten tips are convenient for use in a high brightness gaseous phase field ionisation source. However, the lifetime of these tips is not adequate for practical use. The authors are investigating whether coating tungsten tips with diamond using Chemical Vapor Deposition (CVD) will improve the practicality of using these tips by an improvement in longevity of the source and/or an improvement in brightness due to the effects of the property of negative electron affinity which has been observed on CVD diamond. 1 ref.

The potential use of diamond coated tungsten tips as a field ionisation source

Energy Technology Data Exchange (ETDEWEB)

Brown, A; Prawer, S; Legge, G J.F.; Kostidis, L I [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1997-12-31

Tungsten tips are convenient for use in a high brightness gaseous phase field ionisation source. However, the lifetime of these tips is not adequate for practical use. The authors are investigating whether coating tungsten tips with diamond using Chemical Vapor Deposition (CVD) will improve the practicality of using these tips by an improvement in longevity of the source and/or an improvement in brightness due to the effects of the property of negative electron affinity which has been observed on CVD diamond. 1 ref.

Ti-doped hydrogenated diamond like carbon coating deposited by hybrid physical vapor deposition and plasma enhanced chemical vapor deposition

Science.gov (United States)

Lee, Na Rae; Sle Jun, Yee; Moon, Kyoung Il; Sunyong Lee, Caroline

2017-03-01

Diamond-like carbon films containing titanium and hydrogen (Ti-doped DLC:H) were synthesized using a hybrid technique based on physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD). The film was deposited under a mixture of argon (Ar) and acetylene gas (C2H2). The amount of Ti in the Ti-doped DLC:H film was controlled by varying the DC power of the Ti sputtering target ranging from 0 to 240 W. The composition, microstructure, mechanical and chemical properties of Ti-doped DLC:H films with varying Ti concentrations, were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nano indentation, a ball-on-disk tribometer, a four-point probe system and dynamic anodic testing. As a result, the optimum composition of Ti in Ti-doped DLC:H film using our hybrid method was found to be a Ti content of 18 at. %, having superior electrical conductivity and high corrosion resistance, suitable for bipolar plates. Its hardness value was measured to be 25.6 GPa with a low friction factor.

Comparative investigation of smooth polycrystalline diamond films on dental burs by chemical vapor deposition

Science.gov (United States)

Sein, Htet; Ahmed, Waqar; Rego, Christopher; Jackson, Mark; Polini, Riccardo

2006-04-01

Depositions of hot filament chemical vapor-deposited diamond on cobalt-cemented tungsten carbide (WC-Co) rotary cutting dental burs are presented. Conventional dental tools made of sintered polycrystalline diamond have a number of problems associated with the heterogeneity of the crystallite, decreased cutting efficiency, and short life. A preferential (111) faceted diamond was obtained after 15 h of deposition at a growth rate of 1.1 µm/h. Diamond-coated WC-Co dental burs and conventional sintered burs are mainly used in turning, milling, and drilling operations for machining metal ceramic hard alloys such as CoCr, composite teeth, and aluminum alloy in the dental laboratory. The influence of structure, the mechanical characteristics of both diamond grains and hard alloys on the wear behavior, as well as the regimen of grinding on diamond wear are considered. Erosion wear properties are also investigated under air-sand erosion testing. After machining with excessive cutting performance, calculations can be made on flank and crater wear areas. Diamond-coated WC-Co dental burs offered significantly better erosion and wear resistance compared with uncoated WC-Co tools and sintered burs.

Diamond synthesis at atmospheric pressure by microwave capillary plasma chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Hemawan, Kadek W.; Gou, Huiyang; Hemley, Russell J. [Geophysical Laboratory, Carnegie Institution of Washington, 5251 Broad Branch Rd., NW, Washington, DC 20015 (United States)

2015-11-02

Polycrystalline diamond has been synthesized on silicon substrates at atmospheric pressure, using a microwave capillary plasma chemical vapor deposition technique. The CH{sub 4}/Ar plasma was generated inside of quartz capillary tubes using 2.45 GHz microwave excitation without adding H{sub 2} into the deposition gas chemistry. Electronically excited species of CN, C{sub 2}, Ar, N{sub 2}, CH, H{sub β}, and H{sub α} were observed in the emission spectra. Raman measurements of deposited material indicate the formation of well-crystallized diamond, as evidenced by the sharp T{sub 2g} phonon at 1333 cm{sup −1} peak relative to the Raman features of graphitic carbon. Field emission scanning electron microscopy images reveal that, depending on the growth conditions, the carbon microstructures of grown films exhibit “coral” and “cauliflower-like” morphologies or well-facetted diamond crystals with grain sizes ranging from 100 nm to 10 μm.

An effective approach to synthesize monolayer tungsten disulphide crystals using tungsten halide precursor

Energy Technology Data Exchange (ETDEWEB)

Thangaraja, Amutha; Shinde, Sachin M.; Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp; Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

2016-02-01

The synthesis of large-area monolayer tungsten disulphide (WS{sub 2}) single crystal is critical for realistic application in electronic and optical devices. Here, we demonstrate an effective approach to synthesize monolayer WS{sub 2} crystals using tungsten hexachloride (WCl{sub 6}) as a solid precursor in atmospheric chemical vapor deposition process. In this technique, 0.05M solution of WCl{sub 6} in ethanol was drop-casted on SiO{sub 2}/Si substrate to create an even distribution of the precursor, which was reduced and sulfurized at 750 °C in Ar atmosphere. We observed growth of triangular, star-shaped, as well as dendritic WS{sub 2} crystals on the substrate. The crystal geometry evolves with the shape and size of the nuclei as observed from the dendritic structures. These results show that controlling the initial nucleation and growth process, large WS{sub 2} single crystalline monolayer can be grown using the WCl{sub 6} precursor. Our finding shows an easier and effective approach to grow WS{sub 2} monolayer using tungsten halide solution-casting, rather than evaporating the precursor for gas phase reaction.

Comparison of a model vapor deposited glass films to equilibrium glass films

Science.gov (United States)

Flenner, Elijah; Berthier, Ludovic; Charbonneau, Patrick; Zamponi, Francesco

Vapor deposition of particles onto a substrate held at around 85% of the glass transition temperature can create glasses with increased density, enthalpy, kinetic stability, and mechanical stability compared to an ordinary glass created by cooling. It is estimated that an ordinary glass would need to age thousands of years to reach the kinetic stability of a vapor deposited glass, and a natural question is how close to the equilibrium is the vapor deposited glass. To understand the process, algorithms akin to vapor deposition are used to create simulated glasses that have a higher kinetic stability than their annealed counterpart, although these glasses may not be well equilibrated either. Here we use novel models optimized for a swap Monte Carlo algorithm in order to create equilibrium glass films and compare their properties with those of glasses obtained from vapor deposition algorithms. This approach allows us to directly assess the non-equilibrium nature of vapor-deposited ultrastable glasses. Simons Collaboration on Cracking the Glass Problem and NSF Grant No. DMR 1608086.

Raman Spectroscopic Study of Carbon Nano tubes Prepared Using Fe/ZnO-Palm Olein-Chemical Vapour Deposition Syazwan

International Nuclear Information System (INIS)

Zobir, A.M.; Abdullah, S.; Rusop, M.; Abdullah, S.; Abu Bakar, S.; Zainal, Z.; Sarijo, S.H.; Rusop, M.

2012-01-01

Multi walled carbon nano tubes (MWCNTs) were synthesized using Fe/ZnO catalyst by a dual-furnace thermal chemical vapor deposition (CVD) method at 800-1000 degree C using nitrogen gas with a constant flow rate of 150 sccm/min as a gas carrier. Palm olein (PO), ferrocene in the presence of 0.05 M zinc nitrate, and a p-type silicon wafer were used as carbon source, catalyst precursor, and sample target, respectively. D, G, and G' bands were observed at 1336-1364, 1559-1680, and 2667-2682 cm -1 , respectively. Carbon nano tubes (CNTs) with the highest degree of crystallinity were obtained at around 8000 degree C, and the smallest diameter of about 2 nm was deposited on the silicon substrate at 1000 degree C.

Hideout in steam generator tube deposits

International Nuclear Information System (INIS)

Balakrishnan, P.V.; Franklin, K.J.; Turner, C.W.

1998-05-01

Hideout in deposits on steam generator tubes was studied using tubes coated with magnetite. Hideout from sodium chloride solutions at 279 degrees C was followed using an on-line high-temperature conductivity probe, as well as by chemical analysis of solution samples from the autoclave in which the studies were done. Significant hideout was observed only at a heat flux greater than 200 kW/m 2 , corresponding to a temperature drop greater than 2 degrees C across the deposits. The concentration factor resulting from the hideout increased highly non-linearly with the heat flux (varying as high as the fourth power of the heat flux). The decrease in the apparent concentration factor with increasing deposit thickness suggested that the pores in the deposit were occupied by a mixture of steam and water, which is consistent with the conclusion from the thermal conductivity measurements on deposits in a separate study. Analyses of the deposits after the hideout tests showed no evidence of any hidden-out solute species, probably due to the concentrations being very near the detection limits and to their escape from the deposit as the tests were being ended. This study showed that hideout in deposits may concentrate solutes in the steam generator bulk water by a factor as high as 2 x 10 3 . Corrosion was evident under the deposit in some tests, with some chromium enrichment on the surface of the tube. Chromium enrichment usually indicates an acidic environment, but the mobility required of chromium to become incorporated into the thick magnetite deposit may indicate corrosion under an alkaline environment. An alkaline environment could result from preferential accumulation of sodium in the solution in the deposit during the hideout process. (author)

Modeling and control of diffusion and low-pressure chemical vapor deposition furnaces

Science.gov (United States)

De Waard, H.; De Koning, W. L.

1990-03-01

In this paper a study is made of the heat transfer inside cylindrical resistance diffusion and low-pressure chemical vapor deposition furnaces, aimed at developing an improved temperature controller. A model of the thermal behavior is derived which also covers the important class of furnaces equipped with semitransparent quartz process tubes. The model takes into account the thermal behavior of the thermocouples. It is shown that currently used temperature controllers are highly inefficient for very large scale integration applications. Based on the model an alternative temperature controller of the linear-quadratic-Gaussian type is proposed which features direct wafer temperature control. Some simulation results are given.

Co-deposition of rhodium and tungsten films for the first-mirror on ITER

International Nuclear Information System (INIS)

Marot, Laurent; Steiner, Roland; Gantenbein, Markus; Mathys, Daniel; Meyer, Ernst

2011-01-01

The detailed characterizations of rhodium/tungsten films prepared by co-deposition using a dual magnetron sputtering have been carried out on silicon substrates at room temperature. Effects of the tungsten incorporated in the film on the chemical bonding state, optical reflectivity and crystallinity were investigated using X-ray photoelectron spectroscopy (XPS), reflectivity measurements, X-rays diffraction (XRD) and scanning electron microscopy (SEM). The incorporation of tungsten changes the films crystalline structure i.e. leading to Rh 3 W formation. The reflectivity of the films decreases linearly with the decrease of rhodium concentration. XPS and ultraviolet photoemission spectroscopy (UPS) measurements show a positive shift of the core level binding energy of rhodium which is coupled to a shift of the Rh d-band ΔE d away from the Fermi level. Opposite shifts are observed for tungsten.

Titanium tungsten coatings for bioelectrochemical applications

DEFF Research Database (Denmark)

Wierzbicki, Rafal; Amato, Letizia; Łopacińska, J.

2011-01-01

This paper presents an assessment of titanium tungsten (TiW) coatings and their applicability as components of biosensing systems. The focus is put on using TiW as an electromechanical interface layer between carbon nanotube (CNT) forests and silicon nanograss (SiNG) cell scaffolds. Cytotoxicity......, applicability to plasma-enhanced chemical vapor deposition (PECVD) of aligned CNT forests, and electrochemical performance are investigated. Experiments include culturing of NIH3T3 mouse embryonic fibroblast cells on TiW coated silicon scaffolds, CNT growth on TiW substrates with nickel catalyst, and cyclic...

Advances in modeling of chemical vapor infiltration for tube fabrication

Energy Technology Data Exchange (ETDEWEB)

Starr, T.L. [Georgia Inst. of Tech., Atlanta, GA (United States). School of Materials Science and Technology

1998-04-01

The forced flow/thermal gradient chemical vapor infiltration process (FCVI) can be used for fabrication of tube-shaped components of ceramic matrix composites. Recent experimental work at Oak Ridge National Laboratory (ORNL) includes process and materials development studies using a small tube reactor. Use of FCVI for this geometry involves significant changes in fixturing as compared to disk-shaped preforms previously fabricated. The authors have used their computer model of the CVI process to simulate tube densification and to identify process modifications that will decrease processing time. This report presents recent model developments and applications.

Selective metal-vapor deposition on solvent evaporated polymer surfaces

Energy Technology Data Exchange (ETDEWEB)

Yamaguchi, Koji; Tsujioka, Tsuyoshi, E-mail: tsujioka@cc.osaka-kyoiku.ac.jp

2015-12-31

We report a selective metal-vapor deposition phenomenon based on solvent printing and evaporation on polymer surfaces and propose a method to prepare fine metal patterns using maskless vacuum deposition. Evaporation of the solvent molecules from the surface caused large free volumes between surface polymer chains and resulted in high mobility of the chains, enhancing metal-vapor atom desorption from the surface. This phenomenon was applied to prepare metal patterns on the polymer surface using solvent printing and maskless metal vacuum deposition. Metal patterns with high resolution of micron scale were obtained for various metal species and semiconductor polymer substrates including poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] and poly(3-hexylthiophene-2,5-diyl). - Highlights: • Selective metal-vapor deposition using solvent evaporation on polymer was attained. • Metal patterns with high resolution were obtained for various metal species. • This method can be applied to achieve fine metal-electrodes for polymer electronics.

Near-room temperature deposition of W and WO3 thin films by hydrogen atom assisted chemical vapor deposition

International Nuclear Information System (INIS)

Lee, W.W.; Reeves, R.R.

1992-01-01

A novel near-room temperatures CVD process has been developed using H-atoms reaction with WF 6 to produced tungsten and tungsten oxide films. The chemical, physical and electrical properties of these films were studied. Good adhesion and low resistivity of W films were measured. Conformal WO 3 films were obtained on columnar tungsten using a small amount of molecular oxygen in the gas stream. A reaction mechanism was evaluated on the basis of experimental results. The advantages of the method include deposition of adherent films in a plasma-free environment, near-room temperature, with a low level of impurity

Effects of nitrogen ion implantation time on tungsten films deposited by DC magnetron sputtering on AISI 410 martensitic stainless steel

Energy Technology Data Exchange (ETDEWEB)

Malau, Viktor, E-mail: malau@ugm.ac.id; Ilman, Mochammad Noer, E-mail: noer-ilman@yahoo.com; Iswanto, Priyo Tri, E-mail: priyatri@yahoo.com; Jatisukamto, Gaguk, E-mail: gagukjtsk@yahoo.co.id [Mechanical and Industrial Engineering Department, Gadjah Mada University Jl. Grafika 2, Yogyakarta, 55281 (Indonesia)

2016-03-29

Nitrogen ion implantation time on tungsten thin film deposited on surface of AISI 410 steel has been performed. Tungsten thin film produced by dc magnetron sputtering method was deposited on AISI 410 martensitic stainless steel substrates, and then the nitrogen ions were implanted on tungsten thin film. The objective of this research is to investigate the effects of implantation deposition time on surface roughness, microhardness, specific wear and corrosion rate of nitrogen implanted on tungsten film. Magnetron sputtering process was performed by using plasma gas of argon (Ar) to bombardier tungsten target (W) in a vacuum chamber with a pressure of 7.6 x 10{sup −2} torr, a voltage of 300 V, a sputter current of 80 mA for sputtered time of 10 minutes. Nitrogen implantation on tungsten film was done with an initial pressure of 3x10{sup −6} mbar, a fluence of 2 x 10{sup 17} ions/cm{sup 2}, an energy of 100 keV and implantation deposition times of 0, 20, 30 and 40 minutes. The surface roughness, microhardness, specific wear and corrosion rate of the films were evaluated by surfcorder test, Vickers microhardness test, wear test and potentiostat (galvanostat) test respectively. The results show that the nitrogen ions implanted deposition time on tungsten film can modify the surface roughness, microhardness, specific wear and corrosion rate. The minimum surface roughness, specific wear and corrosion rate can be obtained for implantation time of 20 minutes and the maximum microhardness of the film is 329 VHN (Vickers Hardness Number) for implantation time of 30 minutes. The specific wear and corrosion rate of the film depend directly on the surface roughness.

Copper-vapor-catalyzed chemical vapor deposition of graphene on dielectric substrates

Science.gov (United States)

Yang, Chao; Wu, Tianru; Wang, Haomin; Zhang, Xuefu; Shi, Zhiyuan; Xie, Xiaoming

2017-07-01

Direct synthesis of high-quality graphene on dielectric substrates is important for its application in electronics. In this work, we report the process of copper-vapor-catalyzed chemical vapor deposition of high-quality and large graphene domains on various dielectric substrates. The copper vapor plays a vital role on the growth of transfer-free graphene. Both single-crystal domains that are much larger than previous reports and high-coverage graphene films can be obtained by adjusting the growth duration. The quality of the obtained graphene was verified to be comparable with that of graphene grown on Cu foil. The progress reported in this work will aid the development of the application of transfer-free graphene in the future.

Enthalpy and high temperature relaxation kinetics of stable vapor-deposited glasses of toluene

International Nuclear Information System (INIS)

Bhattacharya, Deepanjan; Sadtchenko, Vlad

2014-01-01

Stable non-crystalline toluene films of micrometer and nanometer thicknesses were grown by vapor deposition at distinct rates and probed by fast scanning calorimetry. Fast scanning calorimetry is shown to be extremely sensitive to the structure of the vapor-deposited phase and was used to characterize simultaneously its kinetic stability and its thermodynamic properties. According to our analysis, transformation of vapor-deposited samples of toluene during heating with rates in excess 10 5 K s −1 follows the zero-order kinetics. The transformation rate correlates strongly with the initial enthalpy of the sample, which increases with the deposition rate according to sub-linear law. Analysis of the transformation kinetics of vapor-deposited toluene films of various thicknesses reveal a sudden increase in the transformation rate for films thinner than 250 nm. The change in kinetics seems to correlate with the surface roughness scale of the substrate. The implications of these findings for the formation mechanism and structure of vapor-deposited stable glasses are discussed

Morphology of Si/tungsten-silicides/Si interlayers

International Nuclear Information System (INIS)

Theodore, N.; Secco d'Aragona, F.; Blackstone, S.

1992-01-01

Tungsten and tungsten-silicides are of interest for semiconductor technology because of their refractory nature, low electrical-resistivity and high electromigration-resistance. This paper presents the first formation of buried tungsten-silicide layers in silicon, by proximity adhesion. The interlayers, created by a combination of chemical vapor-deposition (CVD) and proximity-adhesion were studied using transmission electron-microscopy (TEM). The behavior of the layers in the presence and absence of an adjacent silicon-dioxide interlayer was also investigated. Buried silicide layers were successfully formed with or without the adjacent silicon-dioxide. The silicide formed continuous layers with single grains encompassing the width of the interlayer. Individual grains were globular, with cusps at grain boundaries. This caused interlayer-thicknesses to be non-uniform, with lower thickness values being present at the cusps. Occasional voids were observed at grain-boundary cusps. The voids were smaller and less frequent in the presence of an adjacent oxide-layer, due to flow of the oxide during proximity adhesion. Electron-diffraction revealed a predominance of tungsten-disilicide in the interlayers, with some free tungsten being present. Stresses in the silicide layers caused occasional glide dislocations to propagate into the silicon substrate beneath the interlayers. The dislocations propagate only ∼100 nm into the substrate and therefore should not be detrimental to use of the buried layers. Occasional precipitates were observed at the end of glide-loops. These possibly arise due to excess tungsten from the interlayer diffusion down the glide dislocation to finally precipitate out as tungsten-silicide

Physical-analytical model for cesium/oxygen coadsorption on tungsten

International Nuclear Information System (INIS)

Rasor, N.S.

1992-01-01

In this paper a physical-analytical model is formulated for computing the emission and vaporization properties of a surface immersed in a multi-species vapor. The evaporation and condensation processes are assumed to be identical to those for an equilibrium adsorbed phase in equilibrium with its vapor, permitting statistical mechanical computation of the sticking coefficient for the practical non-equilibrium condensation condition. Two classes of adsorption sites are defined corresponding to superficial and interstitial coadsorption. The work function is computed by a self-consistent summation over the dipole moments of the various coadsorbed species in their mutual electric field. The model adequately describes observed emission and evaporation from tungsten surfaces immersed in pure cesium vapor and in pure oxygen vapor. Using available and estimated properties for 17 species of cesium, oxygen, tungsten and their compounds, the computed work function for tungsten immersed in Cs/O vapor is compared with limited available experimental data, and the basic phenomenology of Cs/O coadsorption electrodes is discussed

Preparation of tungsten coatings on graphite by electro-deposition via Na{sub 2}WO{sub 4}–WO{sub 3} molten salt system

Energy Technology Data Exchange (ETDEWEB)

Sun, Ning-bo [School of Materials Science and Engineering, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing 100083 (China); Zhang, Ying-chun, E-mail: zycustb@163.com [School of Materials Science and Engineering, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing 100083 (China); Jiang, Fan; Lang, Shao-ting [School of Materials Science and Engineering, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing 100083 (China); Xia, Min [School of Materials Science and Engineering, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing 100083 (China); Institute of Powder Metallurgy and Advanced Ceramics, Southwest Jiaotong University, 111, 1st Section, Northern 2nd Ring Road, Chengdu (China)

2014-11-15

Highlights: • Tungsten coatings on graphite were firstly obtained by electro-deposition method via Na{sub 2}WO{sub 4}–WO{sub 3} molten salt system. • Uniform and dense tungsten coatings could be easily prepared in each face of the sample, especially the complex components. • The obtained tungsten coatings are with high purity, ultra-low oxygen content (about 0.022 wt%). • Modulate pulse parameters can get tungsten coatings with different thickness and hardness. - Abstract: Tungsten coating on graphite substrate is one of the most promising candidate materials as the ITER plasma facing components. In this paper, tungsten coatings on graphite substrates were fabricated by electro-deposition from Na{sub 2}WO{sub 4}–WO{sub 3} molten salt system at 1173 K in atmosphere. Tungsten coatings with no impurities were successfully deposited on graphite substrates under various pulsed current densities in an hour. By increasing the current density from 60 mA cm{sup −2} to 120 mA cm{sup −2} an increase of the average size of tungsten grains, the thickness and the hardness of tungsten coatings occurs. The average size of tungsten grains can reach 7.13 μm, the thickness of tungsten coating was in the range of 28.8–51 μm, and the hardness of coating was higher than 400 HV. No cracks or voids were observed between tungsten coating and graphite substrate. The oxygen content of tungsten coating is about 0.022 wt%.

Recent Advances in the Deposition of Diamond Coatings on Co-Cemented Tungsten Carbides

Directory of Open Access Journals (Sweden)

R. Polini

2012-01-01

Full Text Available Co-cemented tungsten carbides, namely, hard metals are largely used to manufacture high wear resistant components in several manufacturing segments. Coating hard metals with superhard materials like diamond is of utmost interest as it can further extend their useful lifespan. The deposition of diamond coatings onto WC-Co can be extremely complicated as a result of poor adhesion. This can be essentially ascribed to (i the mismatch in thermal expansion coefficients between diamond and WC-Co, at the typical high temperatures inside the chemical vapour deposition (CVD chamber, generates large residual stresses at the interface; (ii the role of surface Co inside the WC-Co matrix during diamond CVD, which promotes carbon dissolution and diffusion. The present investigation reviews the techniques by which Co-cemented tungsten carbides can be treated to make them prone to receive diamond coatings by CVD. Further, it proposes interesting ecofriendly and sustainable alternatives to further improve the diamond deposition process as well as the overall performance of the coated hard metals.

Molecular Models for DSMC Simulations of Metal Vapor Deposition

OpenAIRE

Venkattraman, A; Alexeenko, Alina A

2010-01-01

The direct simulation Monte Carlo (DSMC) method is applied here to model the electron‐beam (e‐beam) physical vapor deposition of copper thin films. A suitable molecular model for copper‐copper interactions have been determined based on comparisons with experiments for a 2D slit source. The model for atomic copper vapor is then used in axi‐symmetric DSMC simulations for analysis of a typical e‐beam metal deposition system with a cup crucible. The dimensional and non‐dimensional mass fluxes obt...

Influences of Hydraulic Fracturing on Fluid Flow and Mineralization at the Vein-Type Tungsten Deposits in Southern China

Directory of Open Access Journals (Sweden)

Xiangchong Liu

2017-01-01

Full Text Available Wolframite is the main ore mineral at the vein-type tungsten deposits in the Nanling Range, which is a world-class tungsten province. It is disputed how wolframite is precipitated at these deposits and no one has yet studied the links of the mechanical processes to fluid flow and mineralization. Finite element-based numerical experiments are used to investigate the influences of a hydraulic fracturing process on fluid flow and solubility of CO2 and quartz. The fluids are aqueous NaCl solutions and fluid pressure is the only variable controlling solubility of CO2 and quartz in the numerical experiments. Significant fluctuations of fluid pressure and high-velocity hydrothermal pulse are found once rock is fractured by high-pressure fluids. The fluid pressure drop induced by hydraulic fracturing could cause a 9% decrease of quartz solubility. This amount of quartz deposition may not cause a significant decrease in rock permeability. The fluid pressure decrease after hydraulic fracturing also reduces solubility of CO2 by 36% and increases pH. Because an increase in pH would cause a major decrease in solubility of tungsten, the fluid pressure drop accompanying a hydraulic fracturing process facilitates wolframite precipitation. Our numerical experiments provide insight into the mechanisms precipitating wolframite at the tungsten deposits in the Nanling Range as well as other metals whose solubility is strongly dependent on pH.

Low-pressure chemical vapor deposition as a tool for deposition of thin film battery materials

NARCIS (Netherlands)

Oudenhoven, J.F.M.; Dongen, van T.; Niessen, R.A.H.; Croon, de M.H.J.M.; Notten, P.H.L.

2009-01-01

Low Pressure Chemical Vapor Deposition was utilized for the deposition of LiCoO2 cathode materials for all-solid-state thin-film micro-batteries. To obtain insight in the deposition process, the most important process parameters were optimized for the deposition of crystalline electrode films on

Role of defects in tuning the electronic properties of monolayer WS{sub 2} grown by chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Yang, Jie; Zheliuk, Oleksandr; Lu, Jianming; Ye, Jianting [Zernike Institute for Advanced Materials, University of Groningen, Groningen (Netherlands); Gordiichuk, Pavlo [Zernike Institute for Advanced Materials, University of Groningen, Groningen (Netherlands); Department of Chemistry, Northwestern University, Evanston, IL (United States); Herrmann, Andreas [Zernike Institute for Advanced Materials, University of Groningen, Groningen (Netherlands); Molecular Biophysics, Department of Biology, Humboldt-Universitaet Berlin (Germany)

2017-10-15

Two-dimensional transition metal dichalcogenides have already attracted enormous research interest. To understand the dependence of electronic properties on the quality and defect morphology is vital for synthesizing high quality materials and the realization of functional devices. Here, we demonstrate the mapping of the conductive variations by conducting atomic force microscopy (C-AFM) in the monolayer tungsten disulfide (WS{sub 2}) grown by chemical vapor deposition. The electronic properties are strongly affected by the formation of vacancies in monolayer WS{sub 2} during growth, which is also verified by the photoluminescence. This spatial study of defects provides opportunities for optimization of the growth process for enhancing devices performance of TMDs monolayers. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Properties of deposited layer formed by interaction with Be seeded D–He mixture plasma and tungsten

Energy Technology Data Exchange (ETDEWEB)

Tokunaga, K., E-mail: tokunaga@riam.kyushu-u.ac.jp [Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Baldwin, M.J.; Nishijima, D.; Doerner, R.P. [Center for Energy Research, University of California at San Diego, 9500 Gilman Drive, La Jolla, CA 92093-0417 (United States); Nagata, S. [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Tsuchiya, B. [Department of General Education, Faculty of Science and Technology, Meiji University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502 (Japan); Kurishita, H. [International Research Center for Nuclear Materials Science, IMR, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Fujiwara, T.; Araki, K.; Miyamoto, Y. [Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Ohno, N. [School of Engineering, Nagoya University, Nagoya 464-8603 (Japan); Ueda, Y. [Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871 (Japan)

2013-11-15

Be-seeded, high-flux, deuterium/helium mixture plasma exposure experiments on tungsten target materials have been performed to simulate ITER all tungsten divertor erosion/modification and deposition phenomena. The exposure conditions are kept fixed at a typical low-ion-energy of 60 eV and a flux of 3–6 × 10{sup 22}/m{sup 2}/s. Sample temperature is 1123 K and plasma exposure times spanning 1050–10,100 s are explored. The typical ratio of He/D ions is 0.2 and Be content is 0.2%. A He-induced nanostructure layer is formed on the exposure surfaces of tungsten materials and the surface of the nanostructure is covered by a thin layer of Be and O. A fraction of the re-eroded Be from the target is deposited on a glassy carbon plate with line of sight to the tungsten target. Rutherford backscattering spectrometry analyses show that the Be redeposit layer is in the form of laminae. Small amounts of Mo, W and C are also found in the redeposited Be layer. Elastic recoil detection analyses show that D, He and H are also included in the redeposited Be layer.

Electro-deposition metallic tungsten coatings in a Na{sub 2}WO{sub 4}-WO{sub 3} melt on copper based alloy substrate

Energy Technology Data Exchange (ETDEWEB)

Liu, Y.H., E-mail: dreamerhong77@126.com [School of Materials Science and Engineering, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing 100083 (China); Zhang, Y.C.; Liu, Q.Z.; Li, X.L.; Jiang, F. [School of Materials Science and Engineering, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing 100083 (China)

2012-11-15

Highlights: Black-Right-Pointing-Pointer The tungsten coating (>1 mm) was obtained by electro-deposition method in molten salt. Black-Right-Pointing-Pointer Different thickness tungsten coatings were obtained by using different durations. Black-Right-Pointing-Pointer Good performance of coating was obtained when pulse parameters were modulated. - Abstract: The tungsten coating was prepared by electro-deposition technique on copper alloy substrate in a Na{sub 2}WO{sub 4}-WO{sub 3} melt. The coating's surface and cross-section morphologies as well as its impurities were investigated by XPS, SEM and line analysis. Various plating durations were investigated in order to obtain an optimal coating's thickness. The results demonstrated that the electro-deposited coating was compact, voidless, crackless and free from impurities. The tungsten coating's maximum Vickers hardness was measured to be 520 HV. The tungsten coating's minimum oxygen content was determined to be 0.018 wt%. Its maximum thickness was measured to be 1043.67 {mu}m when the duration of electrolysis was set to 100 h. The result of this study has demonstrated the feasibility of having thicker tungsten coatings on copper alloy substrates. These electrodeposited tungsten coatings can be potentially implemented as reliable armour for the medium heat flux plasma facing component (PFC).

Vapor generating unit blowdown arrangement

International Nuclear Information System (INIS)

McDonald, B.N.

1978-01-01

A vapor generating unit having a U-shaped tube bundle is provided with an orificed downcomer shroud and a fluid flow distribution plate between the lower hot and cold leg regions to promote fluid entrained sediment deposition in proximity to an apertured blowdown pipe

Tungsten

International Nuclear Information System (INIS)

Eschnauer, H.

1978-01-01

There is no substitute for tungsten in its main field of application so that the demand will not decrease, but there is a need for further important applications. If small variations are left out of account, a small but steady increase in the annual tungsten consumption can be expected. The amount of tungsten available will increase due to the exploritation of new deposits and the extension of existing mines. This tendency will probably be increased by the world-wide prospection. It is hard to make an assessment of the amount of tungsten are obtained in the People's Republic of china, the purchases of Eastern countries in the West, and the sales policy of the USA; pice forecasts are therefore hard to make. A rather interesting subject with regard to the tungsten cycle as a whole is the reprocessing of tungsten-containing wastes. (orig.) [de

Understanding the chemical vapor deposition of diamond: recent progress

International Nuclear Information System (INIS)

Butler, J E; Mankelevich, Y A; Cheesman, A; Ma, Jie; Ashfold, M N R

2009-01-01

In this paper we review and provide an overview to the understanding of the chemical vapor deposition (CVD) of diamond materials with a particular focus on the commonly used microwave plasma-activated chemical vapor deposition (MPCVD). The major topics covered are experimental measurements in situ to diamond CVD reactors, and MPCVD in particular, coupled with models of the gas phase chemical and plasma kinetics to provide insight into the distribution of critical chemical species throughout the reactor, followed by a discussion of the surface chemical process involved in diamond growth.

Flash vaporization during earthquakes evidenced by gold deposits

Science.gov (United States)

Weatherley, Dion K.; Henley, Richard W.

2013-04-01

Much of the world's known gold has been derived from arrays of quartz veins. The veins formed during periods of mountain building that occurred as long as 3 billion years ago, and were deposited by very large volumes of water that flowed along deep, seismically active faults. The veins formed under fluctuating pressures during earthquakes, but the magnitude of the pressure fluctuations and their influence on mineral deposition is not known. Here we use a simple thermo-mechanical piston model to calculate the drop in fluid pressure experienced by a fluid-filled fault cavity during an earthquake. The geometry of the model is constrained using measurements of typical fault jogs, such as those preserved in the Revenge gold deposit in Western Australia, and other gold deposits around the world. We find that cavity expansion generates extreme reductions in pressure that cause the fluid that is trapped in the jog to expand to a very low-density vapour. Such flash vaporization of the fluid results in the rapid co-deposition of silica with a range of trace elements to form gold-enriched quartz veins. Flash vaporization continues as more fluid flows towards the newly expanded cavity, until the pressure in the cavity eventually recovers to ambient conditions. Multiple earthquakes progressively build economic-grade gold deposits.

Controlling the resistivity gradient in chemical vapor deposition-deposited aluminum-doped zinc oxide

NARCIS (Netherlands)

Ponomarev, M. V.; Verheijen, M. A.; Keuning, W.; M. C. M. van de Sanden,; Creatore, M.

2012-01-01

Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO: Al layers by focusing on the control

Effect of Different Catalyst Deposition Technique on Aligned Multiwalled Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

Directory of Open Access Journals (Sweden)

Mohamed Shuaib Mohamed Saheed

2014-01-01

Full Text Available The paper reported the investigation of the substrate preparation technique involving deposition of iron catalyst by electron beam evaporation and ferrocene vaporization in order to produce vertically aligned multiwalled carbon nanotubes array needed for fabrication of tailored devices. Prior to the growth at 700°C in ethylene, silicon dioxide coated silicon substrate was prepared by depositing alumina followed by iron using two different methods as described earlier. Characterization analysis revealed that aligned multiwalled carbon nanotubes array of 107.9 µm thickness grown by thermal chemical vapor deposition technique can only be achieved for the sample with iron deposited using ferrocene vaporization. The thick layer of partially oxidized iron film can prevent the deactivation of catalyst and thus is able to sustain the growth. It also increases the rate of permeation of the hydrocarbon gas into the catalyst particles and prevents agglomeration at the growth temperature. Combination of alumina-iron layer provides an efficient growth of high density multiwalled carbon nanotubes array with the steady growth rate of 3.6 µm per minute for the first 12 minutes and dropped by half after 40 minutes. Thicker and uniform iron catalyst film obtained from ferrocene vaporization is attributed to the multidirectional deposition of particles in the gaseous form.

Deposition of yttria stabilized zirconia layer for solid oxide fuel cell by chemical vapor infiltration

International Nuclear Information System (INIS)

John, John T.; Dubey, Vivekanand; Kain, Vivekanand; Dey, Gautham Kumar; Prakash, Deep

2011-01-01

Free energy associated with a chemical reaction can be converted into electricity, if we can split the reaction into an anodic reaction and a cathodic reaction and carry out the reactions in an electrochemical cell using electrodes that will catalyze the reactions. We also have to use a suitable electrolyte, that serves to isolate the chemical species in the two compartments from getting mixed directly but allow an ion produced in one of the reactions to proceed to the other side and complete the reaction. For this reason cracks and porosity are not tolerated in the electrolyte. First generation solid oxide fuel cell (SOFC) uses yttria stabilized zirconia (YSZ) as the electrolyte. In spite of the fact that several solid electrolytes with higher conductivities at lower temperature are being investigated and developed, 8 mol% yttria stabilized zirconia (8YSZ) is considered to be the most favored electrolyte for the SOFC today. The electrolyte should be present as a thin, impervious layer of uniform thickness with good adherence, chemical and mechanical stability, in between the porous cathode and anode. Efforts to produce the 8YSZ coatings on porous lanthanum strontium manganite tubes by electrochemical vapor deposition (ECVD) have met with unexpected difficulties such as impurity pick up and chemical and mechanical instability of the LSM tubes in the ECVD environment. It was also difficult to keep the chemical composition of the YSZ coating at exactly 8 mol% Yttria in zirconia and to control the coating thickness in tight control. These problems were overcome by a two step deposition process where a YSZ layer of required thickness was produced by electrophoretic coating from an acetyl acetone bath at a voltage of 30-300V DC and sintered at 1300 deg C. The resulting porous YSZ layer was made impervious by chemical vapor infiltration (CVI) by the reaction between a mixture of vapors of YCl 3 and ZrCl 4 and steam at 1300 deg C as in the case of ECVD for a short

ZnO Nanowires Synthesized by Vapor Phase Transport Deposition on Transparent Oxide Substrates

Directory of Open Access Journals (Sweden)

Taylor Curtis

2010-01-01

Full Text Available Abstract Zinc oxide nanowires have been synthesized without using metal catalyst seed layers on fluorine-doped tin oxide (FTO substrates by a modified vapor phase transport deposition process using a double-tube reactor. The unique reactor configuration creates a Zn-rich vapor environment that facilitates formation and growth of zinc oxide nanoparticles and wires (20–80 nm in diameter, up to 6 μm in length, density <40 nm apart at substrate temperatures down to 300°C. Electron microscopy and other characterization techniques show nanowires with distinct morphologies when grown under different conditions. The effect of reaction parameters including reaction time, temperature, and carrier gas flow rate on the size, morphology, crystalline structure, and density of ZnO nanowires has been investigated. The nanowires grown by this method have a diameter, length, and density appropriate for use in fabricating hybrid polymer/metal oxide nanostructure solar cells. For example, it is preferable to have nanowires no more than 40 nm apart to minimize exciton recombination in polymer solar cells.

Plasma Spray-Physical Vapor Deposition (PS-PVD) of Ceramics for Protective Coatings

Science.gov (United States)

Harder, Bryan J.; Zhu, Dongming

2011-01-01

In order to generate advanced multilayer thermal and environmental protection systems, a new deposition process is needed to bridge the gap between conventional plasma spray, which produces relatively thick coatings on the order of 125-250 microns, and conventional vapor phase processes such as electron beam physical vapor deposition (EB-PVD) which are limited by relatively slow deposition rates, high investment costs, and coating material vapor pressure requirements. The use of Plasma Spray - Physical Vapor Deposition (PS-PVD) processing fills this gap and allows thin (deposited and multilayer coatings of less than 100 microns to be generated with the flexibility to tailor microstructures by changing processing conditions. Coatings of yttria-stabilized zirconia (YSZ) were applied to NiCrAlY bond coated superalloy substrates using the PS-PVD coater at NASA Glenn Research Center. A design-of-experiments was used to examine the effects of process variables (Ar/He plasma gas ratio, the total plasma gas flow, and the torch current) on chamber pressure and torch power. Coating thickness, phase and microstructure were evaluated for each set of deposition conditions. Low chamber pressures and high power were shown to increase coating thickness and create columnar-like structures. Likewise, high chamber pressures and low power had lower growth rates, but resulted in flatter, more homogeneous layers

Directed Vapor Deposition: Low Vacuum Materials Processing Technology

National Research Council Canada - National Science Library

Groves, J. F; Mattausch, G; Morgner, H; Hass, D. D; Wadley, H. N

2000-01-01

Directed vapor deposition (DVD) is a recently developed electron beam-based evaporation technology designed to enhance the creation of high performance thick and thin film coatings on small area surfaces...

Research on chemical vapor deposition processes for advanced ceramic coatings

Science.gov (United States)

Rosner, Daniel E.

1993-01-01

Our interdisciplinary background and fundamentally-oriented studies of the laws governing multi-component chemical vapor deposition (VD), particle deposition (PD), and their interactions, put the Yale University HTCRE Laboratory in a unique position to significantly advance the 'state-of-the-art' of chemical vapor deposition (CVD) R&D. With NASA-Lewis RC financial support, we initiated a program in March of 1988 that has led to the advances described in this report (Section 2) in predicting chemical vapor transport in high temperature systems relevant to the fabrication of refractory ceramic coatings for turbine engine components. This Final Report covers our principal results and activities for the total NASA grant of $190,000. over the 4.67 year period: 1 March 1988-1 November 1992. Since our methods and the technical details are contained in the publications listed (9 Abstracts are given as Appendices) our emphasis here is on broad conclusions/implications and administrative data, including personnel, talks, interactions with industry, and some known applications of our work.

Gas analysis during the chemical vapor deposition of carbon

International Nuclear Information System (INIS)

Lieberman, M.L.; Noles, G.T.

1973-01-01

Gas chromatographic analyses were performed during the chemical vapor deposition of carbon in both isothermal and thermal gradient systems. Such data offer insight into the gas phase processes which occur during deposition and the interrelations which exist between gas composition, deposition rate, and resultant structure of the deposit. The results support a carbon CVD model presented previously. The application of chromatographic analysis to research, development, and full-scale facilities is shown. (U.S.)

Development Status of a CVD System to Deposit Tungsten onto UO2 Powder via the WCI6 Process

Science.gov (United States)

Mireles, O. R.; Kimberlin, A.; Broadway, J.; Hickman, R.

2014-01-01

Nuclear Thermal Propulsion (NTP) is under development for deep space exploration. NTP's high specific impulse (> 850 second) enables a large range of destinations, shorter trip durations, and improved reliability. W-60vol%UO2 CERMET fuel development efforts emphasize fabrication, performance testing and process optimization to meet service life requirements. Fuel elements must be able to survive operation in excess of 2850 K, exposure to flowing hydrogen (H2), vibration, acoustic, and radiation conditions. CTE mismatch between W and UO2 result in high thermal stresses and lead to mechanical failure as a result UO2 reduction by hot hydrogen (H2) [1]. Improved powder metallurgy fabrication process control and mitigated fuel loss can be attained by coating UO2 starting powders within a layer of high density tungsten [2]. This paper discusses the advances of a fluidized bed chemical vapor deposition (CVD) system that utilizes the H2-WCl6 reduction process.

Corrosion processes of physical vapor deposition-coated metallic implants.

Science.gov (United States)

Antunes, Renato Altobelli; de Oliveira, Mara Cristina Lopes

2009-01-01

Protecting metallic implants from the harsh environment of physiological fluids is essential to guaranteeing successful long-term use in a patient's body. Chemical degradation may lead to the failure of an implant device in two different ways. First, metal ions may cause inflammatory reactions in the tissues surrounding the implant and, in extreme cases, these reactions may inflict acute pain on the patient and lead to loosening of the device. Therefore, increasing wear strength is beneficial to the performance of the metallic implant. Second, localized corrosion processes contribute to the nucleation of fatigue cracks, and corrosion fatigue is the main reason for the mechanical failure of metallic implants. Common biomedical alloys such as stainless steel, cobalt-chrome alloys, and titanium alloys are prone to at least one of these problems. Vapor-deposited hard coatings act directly to improve corrosion, wear, and fatigue resistances of metallic materials. The effectiveness of the corrosion protection is strongly related to the structure of the physical vapor deposition layer. The aim of this paper is to present a comprehensive review of the correlation between the structure of physical vapor deposition layers and the corrosion properties of metallic implants.

Selective tungsten deposition in a batch cold wall CVD system

International Nuclear Information System (INIS)

Chow, R.; Kang, S.; Harshbarger, W.R.; Susoeff, M.

1987-01-01

Selective deposition of tungsten offers many advantages for VLSI technology. The process can be used as a planarization technique for multilevel interconnect technology, it can be used to fill contacts and to provide a barrier layer between Al and Si materials, and the selective W process might be used as a self-aligned technology to provide low resistance layers on source/drain and gate conductors. Recent publications have indicate that cold wall CVD systems provide advantages for development of selective W process. Genus has investigated selective W deposition processing, and we have developed a selective W deposition process for the Genus 8402 multifilm deposition system. This paper describes the Genus 8402 system and the selective W process developed in this reactor. To further develop selective W technology, Genus has signed an agreement with General Electric establishing a joint development program. As a part of this program, the authors characterized the selective W process for encroachment, Si consumption and degrees of selectivity on various dielectrics. The status of this development activity and process characterization is reviewed in this paper

Influence of Cooling Rate in High-Temperature Area on Hardening of Deposited High-Cutting Chrome-Tungsten Metal

OpenAIRE

Malushin, N. N.; Valuev, Denis Viktorovich; Valueva, Anna Vladimirovna; Serikbol, A.; Borovikov, I. F.

2015-01-01

The authors study the influence of cooling rate in high-temperature area for thermal cycle of high-cutting chrome-tungsten metal weld deposit on the processes of carbide phase merging and austenite grain growth for the purpose of providing high hardness of deposited metal (HRC 64-66).

Fabrication of tungsten probe for hard tapping operation in atomic force microscopy

Energy Technology Data Exchange (ETDEWEB)

Han, Guebum, E-mail: hanguebum@live.co.kr [Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, 5500 Wabash Avenue, Terre Haute, Indiana 47803 (United States); Department of Mechanical Design and Robot Engineering, Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul 139-743 (Korea, Republic of); Ahn, Hyo-Sok, E-mail: hsahn@seoultech.ac.kr [Manufacturing Systems and Design Engineering Programme, Seoul National University of Science & Technology, 232 Gongneung-ro, Nowon-gu, Seoul 139-743 (Korea, Republic of)

2016-02-15

We propose a method of producing a tungsten probe with high stiffness for atomic force microscopy (AFM) in order to acquire enhanced phase contrast images and efficiently perform lithography. A tungsten probe with a tip radius between 20 nm and 50 nm was fabricated using electrochemical etching optimized by applying pulse waves at different voltages. The spring constant of the tungsten probe was determined by finite element analysis (FEA), and its applicability as an AFM probe was evaluated by obtaining topography and phase contrast images of a Si wafer sample partly coated with Au. Enhanced hard tapping performance of the tungsten probe compared with a commercial Si probe was confirmed by conducting hard tapping tests at five different oscillation amplitudes on single layer graphene grown by chemical vapor deposition (CVD). To analyze the damaged graphene sample, the test areas were investigated using tip-enhanced Raman spectroscopy (TERS). The test results demonstrate that the tungsten probe with high stiffness was capable of inducing sufficient elastic and plastic deformation to enable obtaining enhanced phase contrast images and performing lithography, respectively. - Highlights: • We propose a method of producing highly stiff tungsten probes for hard tapping AFM. • Spring constant of tungsten probe is determined by finite element method. • Enhanced hard tapping performance is confirmed. • Tip-enhanced Raman spectroscopy is used to identify damage to graphene.

Fabrication of tungsten probe for hard tapping operation in atomic force microscopy

International Nuclear Information System (INIS)

Han, Guebum; Ahn, Hyo-Sok

2016-01-01

We propose a method of producing a tungsten probe with high stiffness for atomic force microscopy (AFM) in order to acquire enhanced phase contrast images and efficiently perform lithography. A tungsten probe with a tip radius between 20 nm and 50 nm was fabricated using electrochemical etching optimized by applying pulse waves at different voltages. The spring constant of the tungsten probe was determined by finite element analysis (FEA), and its applicability as an AFM probe was evaluated by obtaining topography and phase contrast images of a Si wafer sample partly coated with Au. Enhanced hard tapping performance of the tungsten probe compared with a commercial Si probe was confirmed by conducting hard tapping tests at five different oscillation amplitudes on single layer graphene grown by chemical vapor deposition (CVD). To analyze the damaged graphene sample, the test areas were investigated using tip-enhanced Raman spectroscopy (TERS). The test results demonstrate that the tungsten probe with high stiffness was capable of inducing sufficient elastic and plastic deformation to enable obtaining enhanced phase contrast images and performing lithography, respectively. - Highlights: • We propose a method of producing highly stiff tungsten probes for hard tapping AFM. • Spring constant of tungsten probe is determined by finite element method. • Enhanced hard tapping performance is confirmed. • Tip-enhanced Raman spectroscopy is used to identify damage to graphene.

High Temperature Multilayer Environmental Barrier Coatings Deposited Via Plasma Spray-Physical Vapor Deposition

Science.gov (United States)

Harder, Bryan James; Zhu, Dongming; Schmitt, Michael P.; Wolfe, Douglas E.

2014-01-01

Si-based ceramic matrix composites (CMCs) require environmental barrier coatings (EBCs) in combustion environments to avoid rapid material loss. Candidate EBC materials have use temperatures only marginally above current technology, but the addition of a columnar oxide topcoat can substantially increase the durability. Plasma Spray-Physical Vapor Deposition (PS-PVD) allows application of these multilayer EBCs in a single process. The PS-PVD technique is a unique method that combines conventional thermal spray and vapor phase methods, allowing for tailoring of thin, dense layers or columnar microstructures by varying deposition conditions. Multilayer coatings were deposited on CMC specimens and assessed for durability under high heat flux and load. Coated samples with surface temperatures ranging from 2400-2700F and 10 ksi loads using the high heat flux laser rigs at NASA Glenn. Coating morphology was characterized in the as-sprayed condition and after thermomechanical loading using electron microscopy and the phase structure was tracked using X-ray diffraction.

Progress Toward Meeting NIF Specifications for Vapor Deposited Polyimide Ablator Coatings

International Nuclear Information System (INIS)

Letts, Stephan A.; Anthamatten, Mitchell; Buckley, Steven R.; Fearon, Evelyn; Nissen, April E.H.; Cook, Robert C.

2004-01-01

We are developing an evaporative coating technique for deposition of thick polyimide (PI) ablator layers on ICF targets. The PI coating technique utilizes stoichiometrically controlled fluxes from two Knudsen cell evaporators containing a dianhydride and a diamine to deposit a polyamic acid (PAA) coating. Heating the PAA coating to 300 deg. C converts the PAA coating to a polyimide. Coated shells are rough due to particles on the substrate mandrels and from damage to the coating caused by the agitation used to achieve a uniform coating. We have developed a smoothing process that exposes an initially rough PAA coated shell to solvent vapor using gas levitation. We found that after smoothing the coatings developed a number of wide (low-mode) defects. We have identified two major contributors to low-mode roughness: surface hydrolysis, and deformation during drying/curing. By minimizing air exposure prior to vapor smoothing, avoiding excess solvent sorption during vapor smoothing, and using slow drying we are able to deposit and vapor smooth coatings 160 μm thick with a surface roughness less than 20 nm RMS

Use of process indices for simplification of the description of vapor deposition systems

International Nuclear Information System (INIS)

Kajikawa, Yuya; Noda, Suguru; Komiyama, Hiroshi

2004-01-01

Vapor deposition is a complex process, including gas-phase, surface, and solid-phase phenomena. Because of the complexity of chemical and physical processes occurring in vapor deposition processes, it is difficult to form a comprehensive, fundamental understanding of vapor deposition and to control such systems for obtaining desirable structures and performance. To overcome this difficulty, we present a method for simplifying the complex description of such systems. One simplification method is to separate complex systems into multiple elements, and determine which of these are important elements. We call this method abridgement. The abridgement method retains only the dominant processes in a description of the system, and discards the others. Abridgement can be achieved by using process indices to evaluate the relative importance of the elementary processes. We describe the formulation and use of these process indices through examples of the growth of continuous films, initial deposition processes, and the formation of the preferred orientation of polycrystalline films. In this paper, we propose a method for representing complex vapor deposition processes as a set of simpler processes

Influence of Cooling Rate in High-Temperature Area on Hardening of Deposited High-Cutting Chrome-Tungsten Metal

International Nuclear Information System (INIS)

Malushin, N N; Valuev, D V; Valueva, A V; Serikbol, A; Borovikov, I F

2015-01-01

The authors study the influence of cooling rate in high-temperature area for thermal cycle of high-cutting chrome-tungsten metal weld deposit on the processes of carbide phase merging and austenite grain growth for the purpose of providing high hardness of deposited metal (HRC 64-66). (paper)

Effects of oxygen addition in reactive cluster beam deposition of tungsten by magnetron sputtering with gas aggregation

Energy Technology Data Exchange (ETDEWEB)

Polášek, J., E-mail: xpolasekj@seznam.cz [Department of Surface and Plasma Science, Faculty of Mathematics and Physic, Charles University, V Holešovičkách 2, Prague 8, CZ-18000 (Czech Republic); Mašek, K. [Department of Surface and Plasma Science, Faculty of Mathematics and Physic, Charles University, V Holešovičkách 2, Prague 8, CZ-18000 (Czech Republic); Marek, A.; Vyskočil, J. [HVM Plasma Ltd., Na Hutmance 2, Prague 5, CZ-158 00 (Czech Republic)

2015-09-30

In this work, we investigated the possibilities of tungsten and tungsten oxide nanoclusters generation by means of non-reactive and reactive magnetron sputtering with gas aggregation. It was found that in pure argon atmosphere, cluster aggregation proceeded in two regimes depending on argon pressure in the aggregation chamber. At the lower pressure, cluster generation was dominated by two-body collisions yielding larger clusters (about 5.5 nm in diameter) at lower rate. At higher pressures, cluster generation was dominated by three-body collisions yielding smaller clusters (3–4 nm in diameter) at higher rate. The small amount of oxygen admixture in the aggregation chamber had considerable influence on cluster aggregation process. At certain critical pressure, the presence of oxygen led to the raise of deposition rate and cluster size. Resulting clusters were composed mostly of tungsten trioxide. The oxygen pressure higher than critical led to the target poisoning and the decrease in the sputtering rate. Critical oxygen pressure decreased with increasing argon pressure, suggesting that cluster aggregation process was influenced by atomic oxygen species (namely, O{sup −} ion) generated by oxygen–argon collisions in the magnetron plasma. - Highlights: • Formation of tungsten and tungsten oxide clusters was observed. • Two modes of cluster aggregation in pure argon atmosphere were found. • Dependence of cluster deposition speed and size on oxygen admixture was observed. • Changes of dependence on oxygen with changing argon pressure were described.

Effects of oxygen addition in reactive cluster beam deposition of tungsten by magnetron sputtering with gas aggregation

International Nuclear Information System (INIS)

Polášek, J.; Mašek, K.; Marek, A.; Vyskočil, J.

2015-01-01

In this work, we investigated the possibilities of tungsten and tungsten oxide nanoclusters generation by means of non-reactive and reactive magnetron sputtering with gas aggregation. It was found that in pure argon atmosphere, cluster aggregation proceeded in two regimes depending on argon pressure in the aggregation chamber. At the lower pressure, cluster generation was dominated by two-body collisions yielding larger clusters (about 5.5 nm in diameter) at lower rate. At higher pressures, cluster generation was dominated by three-body collisions yielding smaller clusters (3–4 nm in diameter) at higher rate. The small amount of oxygen admixture in the aggregation chamber had considerable influence on cluster aggregation process. At certain critical pressure, the presence of oxygen led to the raise of deposition rate and cluster size. Resulting clusters were composed mostly of tungsten trioxide. The oxygen pressure higher than critical led to the target poisoning and the decrease in the sputtering rate. Critical oxygen pressure decreased with increasing argon pressure, suggesting that cluster aggregation process was influenced by atomic oxygen species (namely, O"− ion) generated by oxygen–argon collisions in the magnetron plasma. - Highlights: • Formation of tungsten and tungsten oxide clusters was observed. • Two modes of cluster aggregation in pure argon atmosphere were found. • Dependence of cluster deposition speed and size on oxygen admixture was observed. • Changes of dependence on oxygen with changing argon pressure were described.

Investigation of thermal and hot-wire chemical vapor deposition copper thin films on TiN substrates using CupraSelect as precursor.

Science.gov (United States)

Papadimitropoulos, G; Davazoglou, D

2011-09-01

Copper films were deposited on oxidized Si substrates covered with TiN using a novel chemical vapor deposition reactor in which reactions were assisted by a heated tungsten filament (hot-wire CVD, HWCVD). Liquid at room temperature hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) was directly injected into the reactor with the aid of a direct-liquid injection (DLI) system using N2 as carrier gas. The deposition rates of HWCVD Cu films obtained on TiN covered substrates were found to increase with filament temperature (65 and 170 degrees C were tested). The resistivities of HWCVD Cu films were found to be higher than for thermally grown films due to the possible presence of impurities into the Cu films from the incomplete dissociation of the precursor and W impurities caused by the presence of the filament. For HWCVD films grown at a filament temperature of 170 degrees C, smaller grains are formed than at 65 degrees C as shown from the taken SEM micrographs. XRD diffractograms taken on Cu films deposited on TiN could not reveal the presence of W compounds originating from the filament because the relative peak was masked by the TiN [112] peak.

Half-sandwich cobalt complexes in the metal-organic chemical vapor deposition process

Energy Technology Data Exchange (ETDEWEB)

Georgi, Colin [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany); Hapke, Marko; Thiel, Indre [Leibniz-Institut für Katalyse e.V. an der Universität Rostock (LIKAT), Albert-Einstein-Straße 29a, Rostock 18059 (Germany); Hildebrandt, Alexander [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany); Waechtler, Thomas; Schulz, Stefan E. [Fraunhofer Institute of Electronic Nano Systems (ENAS), Technologie-Campus 3, Chemnitz 09126 (Germany); Technische Universität Chemnitz, Center for Microtechnologies (ZfM), Chemnitz 09107 (Germany); Lang, Heinrich, E-mail: heinrich.lang@chemie.tu-chemnitz.de [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany)

2015-03-02

A series of cobalt half-sandwich complexes of type [Co(η{sup 5}-C{sub 5}H{sub 5})(L)(L′)] (1: L, L′ = 1,5-hexadiene; 2: L = P(OEt){sub 3}, L′ = H{sub 2}C=CHSiMe{sub 3}; 3: L = L′ = P(OEt){sub 3}) has been studied regarding their physical properties such as the vapor pressure, decomposition temperature and applicability within the metal-organic chemical vapor deposition (MOCVD) process, with a focus of the influence of the phosphite ligands. It could be shown that an increasing number of P(OEt){sub 3} ligands increases the vapor pressure and thermal stability of the respective organometallic compound. Complex 3 appeared to be a promising MOCVD precursor with a high vapor pressure and hence was deposited onto Si/SiO{sub 2} (100 nm) substrates. The resulting reflective layer is closed, dense and homogeneous, with a slightly granulated surface morphology. X-ray photoelectron spectroscopy (XPS) studies demonstrated the formation of metallic cobalt, cobalt phosphate, cobalt oxide and cobalt carbide. - Highlights: • Thermal studies and vapor pressure measurements of cobalt half-sandwich complexes was carried out. • Chemical vapor deposition with cobalt half-sandwich complexes is reported. • The use of Co-phosphites results in significant phosphorous-doped metallic layers.

Tungsten atomic layer deposition on polymers

Energy Technology Data Exchange (ETDEWEB)

Wilson, C.A. [Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309-0215 (United States); McCormick, J.A. [Department of Chemical and Biological Engineering, University of Colorado, Boulder, Colorado 80309-0424 (United States); Cavanagh, A.S. [Department of Physics, University of Colorado, Boulder, Colorado 80309-0390 (United States); Goldstein, D.N. [Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309-0215 (United States); Weimer, A.W. [Department of Chemical and Biological Engineering, University of Colorado, Boulder, Colorado 80309-0424 (United States); George, S.M. [Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309-0215 (United States); Department of Chemical and Biological Engineering, University of Colorado, Boulder, Colorado 80309-0424 (United States)], E-mail: Steven.George@Colorado.Edu

2008-07-31

Tungsten (W) atomic layer deposition (ALD) was investigated on a variety of polymer films and polymer particles. These polymers included polyethylene, polyvinyl chloride, polystyrene, polycarbonate, polypropylene and polymethylmethacrylate. The W ALD was performed at 80 {sup o}C using WF{sub 6} and Si{sub 2}H{sub 6} as the gas phase reactants. W ALD on flat polymer films can eventually nucleate and grow after more than 60 AB cycles. X-ray photoelectron spectroscopy studies of W ALD on polystyrene after 50 AB cycles suggested that tungsten nanoclusters are present in the W ALD nucleation regime. The W ALD nucleation is greatly facilitated by a few cycles of Al{sub 2}O{sub 3} ALD. W ALD films were grown at 80 {sup o}C on spin-coated polymers on silicon wafers after 10 AB cycles of Al{sub 2}O{sub 3} ALD. The W ALD film was observed to grow linearly with a growth rate of 3.9 A per AB cycle on the polymer films treated with the Al{sub 2}O{sub 3} ALD seed layer. The W ALD films displayed an excellent, mirror-like optical reflectivity. The resistivity was 100-400 {mu}{omega} cm for W ALD films with thicknesses from 95-845 A. W ALD was also observed on polymer particles after W ALD in a rotary reactor. Without the Al{sub 2}O{sub 3} ALD seed layer, the nucleation of W ALD directly on the polymer particles at 80 {sup o}C required > 50 AB cycles. In contrast, the polymer particles treated with only 5 AB cycles of Al{sub 2}O{sub 3} ALD were observed to blacken after 25 AB cycles of W ALD. W ALD on polymers may have applications for flexible optical mirrors, electromagnetic interference shielding and gas diffusion barriers.

SpekCalc: a program to calculate photon spectra from tungsten anode x-ray tubes

International Nuclear Information System (INIS)

Poludniowski, G; Evans, P M; Landry, G; DeBlois, F; Verhaegen, F

2009-01-01

A software program, SpekCalc, is presented for the calculation of x-ray spectra from tungsten anode x-ray tubes. SpekCalc was designed primarily for use in a medical physics context, for both research and education purposes, but may also be of interest to those working with x-ray tubes in industry. Noteworthy is the particularly wide range of tube potentials (40-300 kVp) and anode angles (recommended: 6-30 deg.) that can be modelled: the program is therefore potentially of use to those working in superficial/orthovoltage radiotherapy, as well as diagnostic radiology. The utility is free to download and is based on a deterministic model of x-ray spectrum generation (Poludniowski 2007 Med. Phys. 34 2175). Filtration can be applied for seven materials (air, water, Be, Al, Cu, Sn and W). In this note SpekCalc is described and illustrative examples are shown. Predictions are compared to those of a state-of-the-art Monte Carlo code (BEAMnrc) and, where possible, to an alternative, widely-used, spectrum calculation program (IPEM78). (note)

Effect of vapor-phase oxygen on chemical vapor deposition growth of graphene

Science.gov (United States)

Terasawa, Tomo-o.; Saiki, Koichiro

2015-03-01

To obtain a large-area single-crystal graphene, chemical vapor deposition (CVD) growth on Cu is considered the most promising. Recently, the surface oxygen on Cu has been found to suppress the nucleation of graphene. However, the effect of oxygen in the vapor phase was not elucidated sufficiently. Here, we investigate the effect of O2 partial pressure (PO2) on the CVD growth of graphene using radiation-mode optical microscopy. The nucleation density of graphene decreases monotonically with PO2, while its growth rate reaches a maximum at a certain pressure. Our results indicate that PO2 is an important parameter to optimize in the CVD growth of graphene.

High-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argon

International Nuclear Information System (INIS)

Broadbent, E.K.; Morgan, A.E.; Flanner, J.M.; Coulman, B.; Sadana, D.K.; Burrow, B.J.; Ellwanger, R.C.

1988-01-01

A rapid thermal anneal (RTA) in an NH 3 ambient has been found to increase the thermal stability of W films chemically vapor deposited (CVD) on Si. W films deposited onto single-crystal Si by low-pressure CVD were rapid thermal annealed at temperatures between 500 and 1100 0 C in NH 3 and Ar ambients. The reactions were studied using Rutherford backscattering spectrometry, x-ray diffraction, Auger electron spectroscopy, transmission electron microscopy, and four-point resistivity probe. High-temperature (≥1000 0 C) RTA in Ar completely converted W into the low resistivity (31 μΩ cm) tetragonal WSi 2 phase. In contrast, after a prior 900 0 C RTA in NH 3 , N inclusion within the W film and at the W/Si interface almost completely suppressed the W-Si reaction. Detailed examination, however, revealed some patches of WSi 2 formed at the interface accompanied by long tunnels extending into the substrate, and some crystalline precipitates in the substrate close to the interface. The associated interfacial contact resistance was only slightly altered by the 900 0 C NH 3 anneal. The NH 3 -treated W film acted as a diffusion barrier in an Al/W/Si contact metallurgy up to at least 550 0 C, at which point some increase in contact resistance was measured

Remote plasma-enhanced metalorganic chemical vapor deposition of aluminum oxide thin films

NARCIS (Netherlands)

Volintiru, I.; Creatore, M.; Hemmen, van J.L.; Sanden, van de M.C.M.

2008-01-01

Aluminum oxide films were deposited using remote plasma-enhanced metalorganic chemical vapor deposition from oxygen/trimethylaluminum mixtures. Initial studies by in situ spectroscopic ellipsometry demonstrated that the aluminum oxide films deposited at temperatures

Comparative X-ray photoelectron spectroscopy study of plasma enhanced chemical vapor deposition and micro pressure chemical vapor deposition of phosphorus silicate glass layers after rapid thermal annealing

International Nuclear Information System (INIS)

Beshkov, G.; Krastev, V.; Gogova, D.; Talik, E.; Adamies, M.

2008-01-01

In this paper the bonding state of Phosphorus Silicate Glass (PSG) layers obtained by two different technological approaches, i.e. in two types of reactors: Plasma Enhanced Chemical Vapor Deposition (PECVD) and Micro Pressure Chemical Vapor Deposition (MPCVD) are investigated employing XPS and AES. The PSG layers are deposited at 380 0 C and 420 0 C in corresponding reactors. XPS and AES analyses show that Si2p peak recorded from PECVD layers are not as expected at their position characteristics of silicon dioxide but instead they are at the characteristic of elemental silicon. Plasma enhancement during deposition leads to less oxidized and more inhomogeneous layer. After rapid thermal annealing the Si2p peak is situated at position characteristic of silicon dioxide. (authors)

Vaporization of a mixed precursors in chemical vapor deposition for YBCO films

Science.gov (United States)

Zhou, Gang; Meng, Guangyao; Schneider, Roger L.; Sarma, Bimal K.; Levy, Moises

1995-01-01

Single phase YBa2Cu3O7-delta thin films with T(c) values around 90 K are readily obtained by using a single source chemical vapor deposition technique with a normal precursor mass transport. The quality of the films is controlled by adjusting the carrier gas flow rate and the precursor feed rate.

Structure of tungsten electrodeposited from oxide chloride-fluoride molten salts

International Nuclear Information System (INIS)

Pavlovskij, V.A.; Reznichenko, V.A.

1998-01-01

Investigation results on the influence of electrolysis parameters and electrolyte composition on tungsten cathode deposit structure are presented. The electrolysis was performed in NaCl-NaF-WO 3 molten salts using tungsten and tungsten coated molybdenum cathodes. Morphological and metallographic studies of tungsten crystals were carrier out. Tungsten deposits were obtained in the form of crystalline conglomerates, sponge and high dispersity powder

Metal–organic covalent network chemical vapor deposition for gas separation

NARCIS (Netherlands)

Boscher, N.D.; Wang, M.; Perrotta, A.; Heinze, K.; Creatore, A.; Gleason, K.K.

2016-01-01

The chemical vapor deposition (CVD) polymerization of metalloporphyrin building units is demonstrated to provide an easily up-scalable one-step method toward the deposition of a new class of dense and defect-free metal–organic covalent network (MOCN) layers. The resulting hyper-thin and flexible

Migration and deposition of 13C in the full-tungsten ASDEX Upgrade tokamak

International Nuclear Information System (INIS)

Hakola, A; Aho-Mantila, L; Groth, M; Kurki-Suonio, T; Makkonen, T; Likonen, J; Koivuranta, S; Krieger, K; Mayer, M; Mueller, H W; Neu, R; Rohde, V

2010-01-01

The migration of carbon in low-density, low-confinement plasmas of ASDEX Upgrade was studied by injecting 13 C into the main chamber of the torus at the end of the 2007 experimental campaign. A selection of standard tungsten-coated lower-divertor and main-chamber tiles as well as a complete set of lower-divertor tiles with an uncoated poloidal marker stripe were removed from one poloidal cross section and analysed using secondary ion mass spectrometry. The poloidal deposition profiles of 13 C on both the tungsten-coated tiles and on the uncoated graphite areas of the marker tiles were measured and compared. For the W-coated lower-divertor tiles, 13 C was deposited mainly on the high-field side tiles, while barely detectable amounts of 13 C were observed on low-field side samples. In contrast, on the uncoated marker stripes the deposition was equally pronounced in the high-field and low-field side divertor. The marker-tile results are in agreement with those obtained from graphite tiles after the 2003 and 2005 13 C experiments in ASDEX Upgrade. In the case of W-coated tiles, the 13 C measurements were complemented by determining the total amount of deposited carbon ( 12 C) on the tiles, which also shows strong deposition at the inner parts of the lower divertor. The estimated deposition of 13 C on W at the divertor areas was less than 1.5% of the injected amount of 13 C atoms. The 13 C analyses of the main-chamber tiles and small silicon samples mounted in remote areas revealed significant deposition in the upper divertor, in upper parts of the heat shield, in the limiter region close to the injection valve, and below the roof baffle. Approximately 8% of the injected 13 C is estimated to have accumulated in these regions. Possible reasons for the different deposition patterns on W and on graphite in different regions of the torus are discussed.

Hot-wire substoichiometric tungsten oxide films deposited in hydrogen environment with n-type conductivity

International Nuclear Information System (INIS)

Kostis, I; Vasilopoulou, M; Giannakopoulos, K; Papadimitropoulos, G; Davazoglou, D; Michalas, L; Papaioannou, G; Konofaos, N; Iliadis, A A; Kennou, S

2012-01-01

Substoichiometric tungsten oxide nanostructured films were synthesized by a hot-wire deposition technique in hydrogen-rich environment and characterized for their structural and electrical properties. A semiconducting behaviour was identified, allowing n-type conductivity even at room temperature which is an important result since it is well known that fully stoichiometric tungsten trioxide is nearly an insulator. Current-voltage characteristics for various temperatures were measured for tungsten oxide/Si heterostructures and analysed using proper modelling. As a result, the conduction mechanism inside the films was identified and found to be of a dual nature, with variable range hopping being dominant at near room temperatures. The saturation current was found to be thermally activated and the activation energy was calculated at 0.40 eV and the grain boundaries barrier at 150 meV. From Hall measurements it was also revealed that the dominant carriers are electrons and a carrier concentration of about 10 14 cm -3 was estimated.

Vapor deposition of large area NpO2 and UO2 deposits

International Nuclear Information System (INIS)

Adair, H.L.; Gibson, J.R.; Kobisk, E.H.; Dailey, J.M.

1976-01-01

Deposition of NpO 2 and UO 2 thin films over an area of 7.5 to 10 cm diam has become a routine operation in preparation of fission chamber plates. Vacuum evaporation or electroplating has been used for this purpose. The ''paint brush'' technique has been used as well; however, uniformity requirements normally eliminate this procedure. Vapor deposition in vacuum appears to be the most suitable technique for preparing NpO 2 and UO 2 deposits of >200 cm 2 . This paper describes the procedures used in preparing uniform large area deposits of NpO 2 (approximately 300 cm 2 ) and UO 2 (approximately 2000 cm 2 ) by vacuum evaporation using electron bombardment heating and several substrate motion and heating methods to achieve uniformity and adhesion

Tungsten oxide nanowires grown on amorphous-like tungsten films

International Nuclear Information System (INIS)

Dellasega, D; Pezzoli, A; Russo, V; Passoni, M; Pietralunga, S M; Nasi, L; Conti, C; Vahid, M J; Tagliaferri, A

2015-01-01

Tungsten oxide nanowires have been synthesized by vacuum annealing in the range 500–710 °C from amorphous-like tungsten films, deposited on a Si(100) substrate by pulsed laser deposition (PLD) in the presence of a He background pressure. The oxygen required for the nanowires formation is already adsorbed in the W matrix before annealing, its amount depending on deposition parameters. Nanowire crystalline phase and stoichiometry depend on annealing temperature, ranging from W_1_8O_4_9-Magneli phase to monoclinic WO_3. Sufficiently long annealing induces the formation of micrometer-long nanowires, up to 3.6 μm with an aspect ratio up to 90. Oxide nanowire growth appears to be triggered by the crystallization of the underlying amorphous W film, promoting their synthesis at low temperatures. (paper)

Synthesis and Characterization of Carbon nanofibers on Co and Cu Catalysts by Chemical Vapor Deposition

International Nuclear Information System (INIS)

Park, Eunsil; Kim, Jongwon; Lee, Changseop

2014-01-01

This study reports on the synthesis of carbon nanofibers via chemical vapor deposition using Co and Cu as catalysts. In order to investigate the suitability of their catalytic activity for the growth of nanofibers, we prepared catalysts for the synthesis of carbon nanofibers with Cobalt nitrate and Copper nitrate, and found the optimum concentration of each respective catalyst. Then we made them react with Aluminum nitrate and Ammonium Molybdate to form precipitates. The precipitates were dried at a temperature of 110 .deg. C in order to be prepared into catalyst powder. The catalyst was sparsely and thinly spread on a quartz tube boat to grow carbon nanofibers via thermal chemical vapor deposition. The characteristics of the synthesized carbon nanofibers were analyzed through SEM, EDS, XRD, Raman, XPS, and TG/DTA, and the specific surface area was measured via BET. Consequently, the characteristics of the synthesized carbon nanofibers were greatly influenced by the concentration ratio of metal catalysts. In particular, uniform carbon nanofibers of 27 nm in diameter grew when the concentration ratio of Co and Cu was 6:4 at 700 .deg. C of calcination temperature; carbon nanofibers synthesized under such conditions showed the best crystallizability, compared to carbon nanofibers synthesized with metal catalysts under different concentration ratios, and revealed 1.26 high amorphicity as well as 292 m 2 g -1 high specific surface area

Chemical vapor deposition (CVD) of uranium for alpha spectrometry

International Nuclear Information System (INIS)

Ramirez V, M. L.; Rios M, C.; Ramirez O, J.; Davila R, J. I.; Mireles G, F.

2015-09-01

The uranium determination through radiometric techniques as alpha spectrometry requires for its proper analysis, preparation methods of the source to analyze and procedures for the deposit of this on a surface or substrate. Given the characteristics of alpha particles (small penetration distance and great loss of energy during their journey or its interaction with the matter), is important to ensure that the prepared sources are thin, to avoid problems of self-absorption. The routine methods used for this are the cathodic electro deposition and the direct evaporation, among others. In this paper the use of technique of chemical vapor deposition (CVD) for the preparation of uranium sources is investigated; because by this, is possible to obtain thin films (much thinner than those resulting from electro deposition or evaporation) on a substrate and comprises reacting a precursor with a gas, which in turn serves as a carrier of the reaction products to achieve deposition. Preliminary results of the chemical vapor deposition of uranium are presented, synthesizing and using as precursor molecule the uranyl acetylacetonate, using oxygen as carrier gas for the deposition reaction on a glass substrate. The uranium films obtained were found suitable for alpha spectrometry. The variables taken into account were the precursor sublimation temperatures and deposition temperature, the reaction time and the type and flow of carrier gas. Of the investigated conditions, two depositions with encouraging results that can serve as reference for further work to improve the technique presented here were selected. Alpha spectra obtained for these depositions and the characterization of the representative samples by scanning electron microscopy and X-ray diffraction are also presented. (Author)

Preparation of membranes using solvent-less vapor deposition followed by in-situ polymerization

Science.gov (United States)

O'Brien, Kevin C [San Ramon, CA; Letts, Stephan A [San Ramon, CA; Spadaccini, Christopher M [Oakland, CA; Morse, Jeffrey C [Pleasant Hill, CA; Buckley, Steven R [Modesto, CA; Fischer, Larry E [Los Gatos, CA; Wilson, Keith B [San Ramon, CA

2010-07-13

A system of fabricating a composite membrane from a membrane substrate using solvent-less vapor deposition followed by in-situ polymerization. A first monomer and a second monomer are directed into a mixing chamber in a deposition chamber. The first monomer and the second monomer are mixed in the mixing chamber providing a mixed first monomer and second monomer. The mixed first monomer and second monomer are solvent-less vapor deposited onto the membrane substrate in the deposition chamber. The membrane substrate and the mixed first monomer and second monomer are heated to produce in-situ polymerization and provide the composite membrane.

Experimental Study on Solar Cooling Tube Using Thermal/Vacuum Emptying Method

Directory of Open Access Journals (Sweden)

Huizhong Zhao

2012-01-01

Full Text Available A solar cooling tube using thermal/vacuum emptying method was experimentally studied in this paper. The coefficient of performance (COP of the solar cooling tube was mostly affected by the vacuum degree of the system. In past research, the thermal vacuum method, using an electric oven and iodine-tungsten lamp to heat up the adsorbent bed and H2O vapor to expel the air from the solar cooling tube, was used to manufacture solar cooling tubes. This paper presents a novel thermal vacuum combined with vacuum pump method allowing an increased vacuum state for producing solar cooling tubes. The following conclusions are reached: the adsorbent bed temperature of solar cooling tube could reaches up to 233°C, and this temperature is sufficient to meet desorption demand; the refrigerator power of a single solar cooling tube varies from 1 W to 12 W; the total supply refrigerating capacity is about 287 kJ; and the COP of this solar cooling tube is about 0.215.

Observation of self-assembled periodic nano-structures induced by femtosecond laser in both ablation and deposition regimes

Science.gov (United States)

Tang, Mingzhen; Zhang, Haitao; Her, Tsing-Hua

2008-02-01

We observed the spontaneous formation of periodic nano-structures in both femtosecond laser ablation and deposition. The former involved 400-nm femtosecond pulses from a 250-KHz regenerated amplified mode-locked Ti:sapphire laser and periodic nanocracks and the nano-structure are in the form of periodic nanocracks in the substrate, the latter applied an 80-MHz mode-locked Ti:sapphire oscillator with pulse energy less than half nanojoule in a laser-induced chemical vapor deposition configuration and tungsten nanogratings grow heterogeneously on top of the substrates. These two observed periodic nanostructures have opposite orientations respecting to laser polarization: the periodic nanocracks are perpendicular to, whereas the deposited tungsten nanogratings are parallel to laser polarization direction. By translating the substrate respecting to the laser focus, both the periodic nanocrack and tungsten nanograting extend to the whole scanning range. The deposited tungsten nanogratings possess excellent uniformity on both the grating period and tooth length. Both the attributes can be tuned precisely by controlling the laser power and scanning speed. Furthermore, we discovered that the teeth of transverse tungsten nanogratings are self aligned along their axial direction during multiple scanning with appropriate offset between scans. We demonstrate the feasibility of fabricating large-area one-dimensional grating by exploiting such unique property. These distinct phenomena of nanocracks and tungsten nanogratings indicate different responsible mechanisms.

High-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argon

Energy Technology Data Exchange (ETDEWEB)

Broadbent, E.K.; Morgan, A.E.; Flanner, J.M.; Coulman, B.; Sadana, D.K.; Burrow, B.J.; Ellwanger, R.C.

1988-12-15

A rapid thermal anneal (RTA) in an NH/sub 3/ ambient has been found to increase the thermal stability of W films chemically vapor deposited (CVD) on Si. W films deposited onto single-crystal Si by low-pressure CVD were rapid thermal annealed at temperatures between 500 and 1100 /sup 0/C in NH/sub 3/ and Ar ambients. The reactions were studied using Rutherford backscattering spectrometry, x-ray diffraction, Auger electron spectroscopy, transmission electron microscopy, and four-point resistivity probe. High-temperature (greater than or equal to1000 /sup 0/C) RTA in Ar completely converted W into the low resistivity (31 ..mu cap omega.. cm) tetragonal WSi/sub 2/ phase. In contrast, after a prior 900 /sup 0/C RTA in NH/sub 3/, N inclusion within the W film and at the W/Si interface almost completely suppressed the W-Si reaction. Detailed examination, however, revealed some patches of WSi/sub 2/ formed at the interface accompanied by long tunnels extending into the substrate, and some crystalline precipitates in the substrate close to the interface. The associated interfacial contact resistance was only slightly altered by the 900 /sup 0/C NH/sub 3/ anneal. The NH/sub 3/-treated W film acted as a diffusion barrier in an Al/W/Si contact metallurgy up to at least 550 /sup 0/C, at which point some increase in contact resistance was measured.

Process for the preparation of fiber-reinforced ceramic composites by chemical vapor deposition

Science.gov (United States)

Lackey, Jr., Walter J.; Caputo, Anthony J.

1986-01-01

A chemical vapor deposition (CVD) process for preparing fiber-reinforced ceramic composites. A specially designed apparatus provides a steep thermal gradient across the thickness of a fibrous preform. A flow of gaseous ceramic matrix material is directed into the fibrous preform at the cold surface. The deposition of the matrix occurs progressively from the hot surface of the fibrous preform toward the cold surface. Such deposition prevents the surface of the fibrous preform from becoming plugged. As a result thereof, the flow of reactant matrix gases into the uninfiltrated (undeposited) portion of the fibrous preform occurs throughout the deposition process. The progressive and continuous deposition of ceramic matrix within the fibrous preform provides for a significant reduction in process time over known chemical vapor deposition processes.

A comparison of diamond growth rate using in-liquid and conventional plasma chemical vapor deposition methods

International Nuclear Information System (INIS)

Takahashi, Yoshiyuki; Toyota, Hiromichi; Nomura, Shinfuku; Mukasa, Shinobu; Inoue, Toru

2009-01-01

In order to make high-speed deposition of diamond effective, diamond growth rates for gas-phase microwave plasma chemical vapor deposition and in-liquid microwave plasma chemical vapor deposition are compared. A mixed gas of methane and hydrogen is used as the source gas for the gas-phase deposition, and a methanol solution of ethanol is used as the source liquid for the in-liquid deposition. The experimental system pressure is in the range of 60-150 kPa. While the growth rate of diamond increases as the pressure increases, the amount of input microwave energy per unit volume of diamond is 1 kW h/mm 3 regardless of the method used. Since the in-liquid deposition method provides a superior cooling effect through the evaporation of the liquid itself, a higher electric input power can be applied to the electrodes under higher pressure environments. The growth rate of in-liquid microwave plasma chemical vapor deposition process is found to be greater than conventional gas-phase microwave plasma chemical vapor deposition process under the same pressure conditions.

A comparison of diamond growth rate using in-liquid and conventional plasma chemical vapor deposition methods

Science.gov (United States)

Takahashi, Yoshiyuki; Toyota, Hiromichi; Nomura, Shinfuku; Mukasa, Shinobu; Inoue, Toru

2009-06-01

In order to make high-speed deposition of diamond effective, diamond growth rates for gas-phase microwave plasma chemical vapor deposition and in-liquid microwave plasma chemical vapor deposition are compared. A mixed gas of methane and hydrogen is used as the source gas for the gas-phase deposition, and a methanol solution of ethanol is used as the source liquid for the in-liquid deposition. The experimental system pressure is in the range of 60-150 kPa. While the growth rate of diamond increases as the pressure increases, the amount of input microwave energy per unit volume of diamond is 1 kW h/mm3 regardless of the method used. Since the in-liquid deposition method provides a superior cooling effect through the evaporation of the liquid itself, a higher electric input power can be applied to the electrodes under higher pressure environments. The growth rate of in-liquid microwave plasma chemical vapor deposition process is found to be greater than conventional gas-phase microwave plasma chemical vapor deposition process under the same pressure conditions.

Imparting passivity to vapor deposited magnesium alloys

Science.gov (United States)

Wolfe, Ryan C.

Magnesium has the lowest density of all structural metals. Utilization of low density materials is advantageous from a design standpoint, because lower weight translates into improved performance of engineered products (i.e., notebook computers are more portable, vehicles achieve better gas mileage, and aircraft can carry more payload). Despite their low density and high strength to weight ratio, however, the widespread implementation of magnesium alloys is currently hindered by their relatively poor corrosion resistance. The objective of this research dissertation is to develop a scientific basis for the creation of a corrosion resistant magnesium alloy. The corrosion resistance of magnesium alloys is affected by several interrelated factors. Among these are alloying, microstructure, impurities, galvanic corrosion effects, and service conditions, among others. Alloying and modification of the microstructure are primary approaches to controlling corrosion. Furthermore, nonequilibrium alloying of magnesium via physical vapor deposition allows for the formation of single-phase magnesium alloys with supersaturated concentrations of passivity-enhancing elements. The microstructure and surface morphology is also modifiable during physical vapor deposition through the variation of evaporation power, pressure, temperature, ion bombardment, and the source-to-substrate distance. Aluminum, titanium, yttrium, and zirconium were initially chosen as candidates likely to impart passivity on vapor deposited magnesium alloys. Prior to this research, alloys of this type have never before been produced, much less studied. All of these metals were observed to afford some degree of corrosion resistance to magnesium. Due to the especially promising results from nonequilibrium alloying of magnesium with yttrium and titanium, the ternary magnesium-yttrium-titanium system was investigated in depth. While all of the alloys are lustrous, surface morphology is observed under the scanning

Plasma exposure behavior of re-deposited tungsten on structural materials of fusion reactors

Energy Technology Data Exchange (ETDEWEB)

Xu, Yu-Ping; Wang, Jing [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Science Island Branch of Graduate School, University of Science & Technology of China, Hefei 230031 (China); Zhou, Hai-Shan, E-mail: haishanzhou@ipp.ac.cn [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Liu, Feng [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Li, Zeng-De [General Research Institute for Nonferrous Metals, Beijing 100088 (China); Li, Xiao-Chun; Lu, Tao [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Liu, Hao-Dong [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Science Island Branch of Graduate School, University of Science & Technology of China, Hefei 230031 (China); Ding, Fang; Mao, Hong-Min; Zhao, Ming-Zhong [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Lin, Chen-Guang [General Research Institute for Nonferrous Metals, Beijing 100088 (China); Luo, Guang-Nan [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Science Island Branch of Graduate School, University of Science & Technology of China, Hefei 230031 (China); Hefei Center for Physical Science and Technology, Hefei 230031 (China); Hefei Science Center of Chinese Academy of Science, Hefei 230027 (China)

2017-05-15

To evaluate the effects of re-deposited tungsten (W) on the surface modification and hydrogen isotope retention behavior of fusion structural materials, the plasma exposure behavior of re-deposited W samples prepared by magnetron sputtering on the F82H steel, the V-5Cr-5Ti alloy as well as bare substrate samples was investigated. All the samples were exposed to 367 shots of deuterium plasmas in the 2015 spring EAST campaign. After the plasma exposure, large area of W layer was exfoliated, while big blisters were found at the interface between the remaining W layer and the substrate materials. The deuterium retention behavior of the samples with re-deposited W layer was characterized by thermal desorption spectroscopy and compared with the bare substrate samples.

The Coupling Effect Research of Ash Deposition and Condensation in Low Temperature Flue Gas

Directory of Open Access Journals (Sweden)

Lei Ma

2016-01-01

Full Text Available Ash deposition is a key factor that deteriorates the heat transfer performance and leads to higher energy consumption of low pressure economizer working in low temperature flue gas. In order to study the ash deposition of heat exchange tubes in low temperature flue gas, two experiments are carried out with different types of heat exchange tubes in different flue gas environments. In this paper, Nusselt Number Nu and fouling factor ε are calculated to describe the heat transfer characteristics so as to study the ash deposition condition. The scanning electron microscope (SEM is used for the analysis of ash samples obtained from the outer wall of heat exchange tubes. The dynamic process of ash deposition is studied under different temperatures of outer wall. The results showed that ash deposition of heat exchanger will achieve a stable state in constant flue gas environment. According to the condition of condensation of acid vapor and water vapor, the process of ash deposition can be distinguished as mere ash deposition, acid-ash coupling deposition, and acid-water-ash coupling deposition.

Reduction of blue tungsten oxide

International Nuclear Information System (INIS)

Wilken, T.; Wert, C.; Woodhouse, J.; Morcom, W.

1975-01-01

A significant portion of commercial tungsten is produced by hydrogen reduction of oxides. Although several modes of reduction are possible, hydrogen reduction is used where high purity tungsten is required and where the addition of other elements or compounds is desired for modification of the metal, as is done for filaments in the lamp industry. Although several investigations of the reduction of oxides have been reported (1 to 5), few principles have been developed which can aid in assessment of current commercial practice. The reduction process was examined under conditions approximating commercial practice. The specific objectives were to determine the effects of dopants, of water vapor in the reducing atmosphere, and of reduction temperature upon: (1) the rate of the reaction by which blue tungsten oxide is reduced to tungsten metal, (2) the intermediate oxides associated with reduction, and (3) the morphology of the resulting tungsten powder

Analysis of Petrol and Diesel Vapor Using Selective Ion Flow Tube/Mass Spectrometry

Czech Academy of Sciences Publication Activity Database

Ping, CH.; Weijun, Z.; Yaman, CH.; Španěl, Patrik; Smith, D.

2003-01-01

Roč. 5, - (2003), s. 548-551 ISSN 0253-3820 Institutional research plan: CEZ:AV0Z4040901 Keywords : selected ion flow tube/mass spectrometry * fuel vapor Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 0.224, year: 2003

Deposition of magnetite particles from high velocity water onto isothermal tubes

International Nuclear Information System (INIS)

Burrill, K.A.

1977-02-01

The deposition rate of magnetite particles from a high velocity water slurry onto isothermal metal tubes was measured. The effects of velocity (5 to 100 m/s), slurry concentration (200 to 1000 mg Fe/kg H 2 O), temperature (25 0 to 90 0 C), pH (4 to 10 at 25 0 C), and tube material (nickel, Zircaloy-4) on deposition rate were studied. The data are interpreted in terms of two steps in series for deposition: a mass transfer step followed by a deposition or inertial coasting step. Mass transfer of particles through the bulk water phase apparently limits the deposition of particles at high Reynolds number

Unraveling the growth of vertically aligned multi-walled carbon nanotubes by chemical vapor deposition

International Nuclear Information System (INIS)

Ramirez, A; Royo, C; Latorre, N; Mallada, R; Monzón, A; Tiggelaar, R M

2014-01-01

The interaction between the main operational variables during the growth of vertically aligned multiwalled carbon nanotubes (VA-MWCNTs) by catalytic chemical vapor deposition is studied. In this contribution, we report the influence of the carbon source (i.e. acetylene, ethylene and propylene), the reaction/activation temperature, the rate of heating, the reaction time, the metal loading, and the metallic nanoparticle size and distribution on the growth and alignment of carbon nanotubes. Fe/Al thin films deposited onto silicon samples by electron-beam evaporation are used as catalyst. A phenomenological growth mechanism is proposed to explain the interaction between these multiple factors. Three different outcomes of the synthesis process are found: i) formation of forests of non-aligned, randomly oriented multi-walled carbon nanotubes, ii) growth of vertically aligned tubes with a thin and homogeneous carbonaceous layer on the top, and iii) formation of vertically aligned carbon nanotubes. This carbonaceous layer (ii) has not been reported before. The main requirements to promote vertically aligned carbon nanotube growth are determined. (paper)

Vaporization inside a mini microfin tube: experimental results and modeling

Science.gov (United States)

Diani, A.; Rossetto, L.

2015-11-01

This paper proposes a comparison among the common R134a and the extremely low GWP refrigerant R1234yf during vaporization inside a mini microfin tube. This microfin tube has an internal diameter of 2.4 mm, it has 40 fins, with a fin height of 0.12 mm. Due to the high heat transfer coefficients shown by this tube, this technology can lead to a refrigerant charge reduction. Tests were run in the Heat Transfer in Micro Geometries Lab of the Dipartimento di Ingegneria Industriale of the Università di Padova. Mass velocities range between 375 and 940 kg m-2 s-1, heat fluxes from 10 to 50 kW m-2, vapour qualities from 0.10 to 0.99, at a saturation temperature of 30°C. The comparison among the two fluids is proposed at the same operating conditions, in order to highlight the heat transfer and pressure drop differences among the two refrigerants. In addition, two correlations are proposed to estimate the heat transfer coefficient and frictional pressure drop during refrigerant flow boiling inside mini microfin tubes. These correlations well predict the experimental values, and thus they can be used as a useful tool to design evaporators based on these mini microfin tubes.

Vapor deposition on doublet airfoil substrates: Control of coating thickness and microstructure

Energy Technology Data Exchange (ETDEWEB)

Rodgers, Theron M.; Zhao, Hengbei; Wadley, Haydn N. G., E-mail: haydn@virginia.edu [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., P.O. Box 400745, Charlottesville, Virginia 22904 (United States)

2015-11-15

Gas jet assisted vapor deposition processes for depositing coatings are conducted at higher pressures than conventional physical vapor deposition methods, and have shown promise for coating complex shaped substrates including those with non-line-of-sight (NLS) regions on their surface. These regions typically receive vapor atoms at a lower rate and with a wider incident angular distribution than substrate regions in line-of-sight (LS) of the vapor source. To investigate the coating of such substrates, the thickness and microstructure variation along the inner (curved) surfaces of a model doublet airfoil containing both LS and NLS regions has been investigated. Results from atomistic simulations and experiments confirm that the coating's thickness is thinner in flux-shadowed regions than in other regions for all the coating processes investigated. They also indicated that the coatings columnar microstructure and pore volume fraction vary with surface location through the LS to NLS transition zone. A substrate rotation strategy for optimizing the thickness over the entire doublet airfoil surface was investigated, and led to the identification of a process that resulted in only small variation of coating thickness, columnar growth angle, and pore volume fraction on all doublet airfoil surfaces.

Pore-scale modeling of vapor transport in partially saturated capillary tube with variable area using chemical potential

DEFF Research Database (Denmark)

Addassi, Mouadh; Schreyer, Lynn; Johannesson, Björn

2016-01-01

Here we illustrate the usefulness of using the chemical potential as the primary unknown by modeling isothermal vapor transport through a partially saturated cylindrically symmetric capillary tube of variable cross-sectional area using a single equation. There are no fitting parameters and the nu......Here we illustrate the usefulness of using the chemical potential as the primary unknown by modeling isothermal vapor transport through a partially saturated cylindrically symmetric capillary tube of variable cross-sectional area using a single equation. There are no fitting parameters...... and the numerical solutions to the equation are compared with experimental results with excellent agreement. We demonstrate that isothermal vapor transport can be accurately modeled without modeling the details of the contact angle, microscale temperature fluctuations, or pressure fluctuations using a modification...

Magmatic-vapor expansion and the formation of high-sulfidation gold deposits: Chemical controls on alteration and mineralization

Science.gov (United States)

Henley, R.W.; Berger, B.R.

2011-01-01

Large bulk-tonnage high-sulfidation gold deposits, such as Yanacocha, Peru, are the surface expression of structurally-controlled lode gold deposits, such as El Indio, Chile. Both formed in active andesite-dacite volcanic terranes. Fluid inclusion, stable isotope and geologic data show that lode deposits formed within 1500. m of the paleo-surface as a consequence of the expansion of low-salinity, low-density magmatic vapor with very limited, if any, groundwater mixing. They are characterized by an initial 'Sulfate' Stage of advanced argillic wallrock alteration ?? alunite commonly with intense silicification followed by a 'Sulfide' Stage - a succession of discrete sulfide-sulfosalt veins that may be ore grade in gold and silver. Fluid inclusions in quartz formed during wallrock alteration have homogenization temperatures between 100 and over 500 ??C and preserve a record of a vapor-rich environment. Recent data for El Indio and similar deposits show that at the commencement of the Sulfide Stage, 'condensation' of Cu-As-S sulfosalt melts with trace concentrations of Sb, Te, Bi, Ag and Au occurred at > 600 ??C following pyrite deposition. Euhedral quartz crystals were simultaneously deposited from the vapor phase during crystallization of the vapor-saturated melt occurs to Fe-tennantite with progressive non-equilibrium fractionation of heavy metals between melt-vapor and solid. Vugs containing a range of sulfides, sulfosalts and gold record the changing composition of the vapor. Published fluid inclusion and mineralogical data are reviewed in the context of geological relationships to establish boundary conditions through which to trace the expansion of magmatic vapor from source to surface and consequent alteration and mineralization. Initially heat loss from the vapor is high resulting in the formation of acid condensate permeating through the wallrock. This Sulfate Stage alteration effectively isolates the expansion of magmatic vapor in subsurface fracture arrays

Explosion symmetry improvement of polyimide-coated tungsten wire in vacuum on negative discharge facility

Science.gov (United States)

Li, Mo; Wu, Jian; Lu, Yihan; Li, Xingwen; Li, Yang; Qiu, Mengtong

2018-01-01

Tungsten wire explosion is very asymmetric when fast current rate and insulated coatings are both applied on negative discharge facility using a 24-mm-diameter cathode geometry, which is commonly used on mega-ampere facilities. It is inferred, based on an analytical treatment of the guiding center drift and COMSOL simulations, that the large negative radial electric field causes early voltage breakdown and terminates energy deposition into the wire core on the anode side of the wire. After the anode side is short circuited, the radial electric field along the wire surface on the cathode side will change its polarity and thus leading to additional energy deposition into the wire core. This change causes ˜10 times larger energy deposition and ˜14 times faster explosion velocity in the cathode side than the anode side. In order to reduce this asymmetry, a hollow cylindrical cathode geometry was used to reverse the polarity of radial electric field and was optimized to use on multi-MA facilities. In this case, fully vaporized polyimide-coated tungsten wire with great symmetry improvement was achieved with energy deposition of ˜8.8 eV/atom. The atomic and electronic density distributions for the two different load geometries were obtained by the double-wavelength measurement.

Evaporation of tungsten in vacuum at low hydrogen and water vapor pressures

International Nuclear Information System (INIS)

Andrievskij, R.A.; Galkin, E.A.; Khromonozhkin, V.V.

1981-01-01

The results of experimental investigations of tungsten evaporation rates in the temperature range 1650-2500 K, partial hydrogen and water vapours pressures 1x10 -5 -10 Pa are presented. Experi-- mental plant, equipment employed and radiometric technique of tungsten evaporation study are described. The dependences of evaporation rate and probabilities of tungsten oxidation by residual vacuum water vapours and dependences of tungsten evaporation rate on partial hydrogen and water vapours pressures are determined [ru

Deposition and High-Temperature Corrosion in Biomass-Fired Boilers

DEFF Research Database (Denmark)

Michelsen, Hanne Philbert

with a newly developed condensation probe. SEM analyses revealed that the vapor deposits consisted of individual angular particles of primarily KCl (1-2 µm) and a sponge-like matrix of submicron particles consisting primarily of K2SO4, which may represent vapor condensate agglomerates. Potassium deposits...... deposits at Masnedø CHP. The density and morphology of these layers indicate that they have been molten. This was taken as evidence of a reaction between the deposit and the metal tube.A corrosion mechanism for chlorine corrosion is suggested. The mechanism is based on gaseous chlorine attack where iron...

Facile synthesis of graphene on single mode fiber via chemical vapor deposition

International Nuclear Information System (INIS)

Zhang, C.; Man, B.Y.; Jiang, S.Z.; Yang, C.; Liu, M.; Chen, C.S.; Xu, S.C.; Feng, D.J.; Bi, D.; Liu, F.Y.; Qiu, H.W.

2014-01-01

Direct deposition of graphene film on the standard single mode fiber is offered using a Cu-vapor-assisted chemical vapor deposition system. The gas flow of H 2 and Ar before the growth process plays a crucial role for the direct deposition of the graphene film and the layers of the graphene can be controlled by the growth time. With a large gas flow, Cu atoms are carried off with the gas flow and hard to deposit on the surface of the single mode fiber before the growth process. Consequently, uniform graphene film is obtained in this case. On the contrary, with a lower one, Cu atoms is facile to deposit on the surface of the single mode fiber and form nanodots acting as active catalytic sites for the growth of carbon nanotubes. This method presents us a promising transfer-free technique for fabrication of the photonic applications.

Preparation and Photoluminescence of Tungsten Disulfide Monolayer

Directory of Open Access Journals (Sweden)

Yanfei Lv

2018-05-01

Full Text Available Tungsten disulfide (WS2 monolayer is a direct band gap semiconductor. The growth of WS2 monolayer hinders the progress of its investigation. In this paper, we prepared the WS2 monolayer through chemical vapor transport deposition. This method makes it easier for the growth of WS2 monolayer through the heterogeneous nucleation-and-growth process. The crystal defects introduced by the heterogeneous nucleation could promote the photoluminescence (PL emission. We observed the strong photoluminescence emission in the WS2 monolayer, as well as thermal quenching, and the PL energy redshift as the temperature increases. We attribute the thermal quenching to the energy or charge transfer of the excitons. The redshift is related to the dipole moment of WS2.

Self-catalytic growth of tin oxide nanowires by chemical vapor deposition process

CSIR Research Space (South Africa)

Thabethe, BS

2013-01-01

Full Text Available The authors report on the synthesis of tin oxide (SnO(sub2)) nanowires by a chemical vapor deposition (CVD) process. Commercially bought SnO nanopowders were vaporized at 1050°C for 30 minutes with argon gas continuously passing through the system...

Analysis and Evaluation of a Vapor-Chamber Fin-Tube Radiator for High-Power Rankine Cycles

National Research Council Canada - National Science Library

Haller, Henry

1965-01-01

An analytical investigation of a flat, direct- condensing fin-tube radiator employing segmented vapor-chamber fins as a means of improving heat rejection was performed A for illustrative high-power...

Flow Vaporization of CO{sub 2} in Microchannel Tubes

Energy Technology Data Exchange (ETDEWEB)

Pettersen, Jostein

2002-07-01

Carbon dioxide is receiving renewed interest as an efficient and environmentally safe refrigerant in a number of applications, including mobile air conditioning and heat pump systems, and hot water heat pumps. Compact heat exchangers for CO{sub 2} systems are designed with small-diameter tubing. The purpose of this study is therefore to provide a better basis for understanding and predicting heat transfer and pressure drop during flow vaporization of CO{sub 2} in microchannels. The ''unusual'' properties of carbon dioxide give heat transfer and two-phase flow characteristics that are very different from those of conventional refrigerants. Examples of these differences are the much higher pressure, the resulting high vapour density, a very low surface tension, and a low liquid viscosity. High pressure and low surface tension has a major effect on nucleate boiling characteristics, and earlier test data have shown a clear dominance of nucleate boiling even at very high mass flux. Heat transfer tests were conducted in a rig using a flat, extruded aluminium microchannel tube of 540 mm length with 25 channels of 0.81 mm diameter. The horizontal test tube was heated by a water jacket in order to get representative boundary conditions for air-to-refrigerant heat transfer (''fluid heating''). Constant heat flux conditions do not simulate these boundary conditions well, and may give unrealistic behaviour especially in relation to dryout and post-dryout heat transfer. Systematic tests at constant heat flux with single-phase CO{sub 2} flow on the inside generated data that were used in the derivation of a model for water-side beat transfer coefficient. A regression based on these data gave a calibrated equation for water-side heat transfer on the form NuNu(Re,Pr). This equation was then used in later experiments to subtract water-side thermal resistance from the measured overall resistance (1/UA), thereby finding the internal heat

Plasma-enhanced chemical vapor deposition for YBCO film fabrication of superconducting fault-current limiter

Energy Technology Data Exchange (ETDEWEB)

Jun, Byung Hyuk; Kim, Chan Joong

2006-05-15

Since the high-temperature superconductor of oxide type was founded, many researches and efforts have been performed for finding its application field. The YBCO superconducting film fabricated on economic metal substrate with uniform critical current density is considered as superconducting fault-current limiter (SFCL). There are physical and chemical processes to fabricate superconductor film, and it is understood that the chemical methods are more economic to deposit large area. Among them, chemical vapor deposition (CVD) is a promising deposition method in obtaining film uniformity. To solve the problems due to the high deposition temperature of thermal CVD, plasma-enhanced chemical vapor deposition (PECVD) is suggested. This report describes the principle and fabrication trend of SFCL, example of YBCO film deposition by PECVD method, and principle of plasma deposition.

Superconducting magnesium diboride coatings for radio frequency cavities fabricated by hybrid physical-chemical vapor deposition

Science.gov (United States)

Wolak, M. A.; Tan, T.; Krick, A.; Johnson, E.; Hambe, M.; Chen, Ke; Xi, X. X.

2014-01-01

We have investigated the coating of an inner surface of superconducting radio frequency cavities with a magnesium diboride thin film by hybrid physical-chemical vapor deposition (HPCVD). To simulate a 6 GHz rf cavity, a straight stainless steel tube of 1.5-inch inner diameter and a dummy stainless steel cavity were employed, on which small sapphire and metal substrates were mounted at different locations. The MgB2 films on these substrates showed uniformly good superconducting properties including Tc of 37-40 K, residual resistivity ratio of up to 14, and root-mean-square roughness Rq of 20-30 nm. This work demonstrates the feasibility of coating the interior of cylindrical and curved objects with MgB2 by the HPCVD technique, an important step towards superconducting rf cavities with MgB2 coating.

Electrochemical generation of mercury cold vapor and its in-situ trapping in gold-covered graphite tube atomizers

International Nuclear Information System (INIS)

Cerveny, Vaclav; Rychlovsky, Petr; Netolicka, Jarmila; Sima, Jan

2007-01-01

The combination of more efficient flow-through electrochemical mercury cold vapor generation with its in-situ trapping in a graphite tube atomizer is described. This coupled technique has been optimized to attain the maximum sensitivity for Hg determination and to minimize the limits of detection and determination. A laboratory constructed thin-layer flow-through cell with a platinum cathode served as the cold vapor generator. Various cathode arrangements with different active surface areas were tested. Automated sampling equipment for the graphite atomizer with an untreated fused silica capillary was used for the introduction of the mercury vapor. The inner surface of the graphite tube was covered with a gold foil placed against the sampling hole. The results attained for the electrochemical mercury cold vapor generation (an absolute limit of detection of 80 pg; peak absorbance, 3σ criterion) were compared with the traditional vapor generation using NaBH 4 as the reducing agent (an absolute limit of detection of 124 pg; peak absorbance, 3σ criterion). The repeatability at the 5 ng ml -1 level was better than 4.1% (RSD) for electrochemical mercury vapor generation and better than 5.6% for the chemical cold vapor generation. The proposed method was applied to the determination the of Hg contents in a certified reference material and in spiked river water samples

Micro- and nano-surface structures based on vapor-deposited polymers

Directory of Open Access Journals (Sweden)

Hsien-Yeh Chen

2017-07-01

Full Text Available Vapor-deposition processes and the resulting thin polymer films provide consistent coatings that decouple the underlying substrate surface properties and can be applied for surface modification regardless of the substrate material and geometry. Here, various ways to structure these vapor-deposited polymer thin films are described. Well-established and available photolithography and soft lithography techniques are widely performed for the creation of surface patterns and microstructures on coated substrates. However, because of the requirements for applying a photomask or an elastomeric stamp, these techniques are mostly limited to flat substrates. Attempts are also conducted to produce patterned structures on non-flat surfaces with various maskless methods such as light-directed patterning and direct-writing approaches. The limitations for patterning on non-flat surfaces are resolution and cost. With the requirement of chemical control and/or precise accessibility to the linkage with functional molecules, chemically and topographically defined interfaces have recently attracted considerable attention. The multifunctional, gradient, and/or synergistic activities of using such interfaces are also discussed. Finally, an emerging discovery of selective deposition of polymer coatings and the bottom-up patterning approach by using the selective deposition technology is demonstrated.

Preparation of hafnium carbide by chemical vapor deposition

International Nuclear Information System (INIS)

Hertz, Dominique.

1974-01-01

Hard, adhesive coatings of single-phase hafnium carbide were obtained by chemical vapor reaction in an atmosphere containing hafnium tetrachloride, methane and a large excess of hydrogen. By varying the gas phase composition and temperature the zones of formation of the different solid phases were studied and the growth of elementary hafnium and carbon deposits evaluated separately. The results show that the mechanism of hafnium carbide deposition does not hardly involve phenomene of homogeneous-phase methane decomposition or tetrachloride reduction by hydrogen unless the atmosphere is very rich or very poor in methane with respect to tetrachloride. However, hydrogen acting inversely on these two reactions, affects the stoichiometry of the substance deposited. The methane decomposition reaction is fairly slow, the reaction leading to hafnium carbide deposition is faster and that of tetrachloride reduction by hydrogen is quite fast [fr

How deposition parameters control growth dynamics of nc-Si deposited by hot-wire chemical vapor deposition

International Nuclear Information System (INIS)

Moutinho, H.R.; To, B.; Jiang, C.-S.; Xu, Y.; Nelson, B.P.; Teplin, C.W.; Jones, K.M.; Perkins, J.; Al-Jassim, M.M.

2006-01-01

We studied the growth of silicon films deposited by hot-wire chemical vapor deposition under different values of filament current, substrate temperature, and hydrogen dilution ratio. The physical and electrical properties of the films were studied by Raman spectroscopy, x-ray diffraction, atomic force microscopy, conductive-atomic force microscopy, and transmission electron microscopy. There is an interdependence of the growth parameters, and films grown with different parameters can have similar structures. We discuss why this interdependence occurs and how it influences the properties of the deposited films, as well as the deposition rate. In general, the films have a complex structure, with a mixture of amorphous (220)-oriented crystalline and nanocrystalline phases present in most cases. The amount of each phase can be controlled by the variation of one or more of the growth parameters at a time

Influence of Molecular Shape on Molecular Orientation and Stability of Vapor-Deposited Organic Semiconductors

Science.gov (United States)

Walters, Diane M.; Johnson, Noah D.; Ediger, M. D.

Physical vapor deposition is commonly used to prepare active layers in organic electronics. Recently, it has been shown that molecular orientation and packing can be tuned by changing the substrate temperature during deposition, while still producing macroscopically homogeneous films. These amorphous materials can be highly anisotropic when prepared with low substrate temperatures, and they can exhibit exceptional kinetic stability; films retain their favorable packing when heated to high temperatures. Here, we study the influence of molecular shape on molecular orientation and stability. We investigate disc-shaped molecules, such as TCTA and m-MTDATA, nearly spherical molecules, such as Alq3, and linear molecules covering a broad range of aspect ratios, such as p-TTP and BSB-Cz. Disc-shaped molecules have preferential horizontal orientation when deposited at low substrate temperatures, and their orientation can be tuned by changing the substrate temperature. Alq3 forms stable, amorphous films that are optically isotropic when vapor deposited over a broad range of substrate temperatures. This work may guide the choice of material and deposition conditions for vapor-deposited films used in organic electronics and allow for more efficient devices to be fabricated.

Rapid synthesis of tantalum oxide dielectric films by microwave microwave-assisted atmospheric chemical vapor deposition

International Nuclear Information System (INIS)

Ndiege, Nicholas; Subramanian, Vaidyanathan; Shannon, Mark A.; Masel, Richard I.

2008-01-01

Microwave-assisted chemical vapor deposition has been used to generate high quality, high-k dielectric films on silicon at high deposition rates with film thicknesses varying from 50 nm to 110 μm using inexpensive equipment. Characterization of the post deposition products was performed by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy and Raman spectroscopy. Film growth was determined to occur via rapid formation and accumulation of tantalum oxide clusters from tantalum (v) ethoxide (Ta(OC 2 H 5 ) 5 ) vapor on the deposition surface

Complete long-term corrosion protection with chemical vapor deposited graphene

DEFF Research Database (Denmark)

Yu, Feng; Camilli, Luca; Wang, Ting

2018-01-01

Despite numerous reports regarding the potential of graphene for corrosion protection, examples of chemical vapor deposited (CVD) graphene-based anticorrosive coatings able to provide long-term protection (i.e. several months) of metals have so far been absent. Here, we present a polymer-graphene......Despite numerous reports regarding the potential of graphene for corrosion protection, examples of chemical vapor deposited (CVD) graphene-based anticorrosive coatings able to provide long-term protection (i.e. several months) of metals have so far been absent. Here, we present a polymer......-graphene hybrid coating, comprising two single layers of CVD graphene sandwiched by three layers of polyvinyl butyral, which provides complete corrosion protection of commercial aluminum alloys even after 120 days of exposure to simulated seawater. The essential role played by graphene in the hybrid coating...

Chemical behavior of lanthanides-tungsten composite materials used in thermo-emissive cathodes

International Nuclear Information System (INIS)

Cadoret, K.; Cachard, J. de; Martinez, L.; Millot, F.; Hennet, L.; Douy, A.; Licheron, M.

2001-01-01

This work presents the crystallography and chemistry of new lanthanides-tungsten composite materials developed to manufacture thermionic cathodes for power grid tubes, based on the same principle than thorium-free cathodes. By mean of x-Ray diffraction at high temperature and under vacuum with synchrotron radiation facilities, we followed in real time the different phases and phase transitions that can occur during the heating process and the carburization at 1550 o C of such tungstates deposits on thin tungsten ribbons. Melting points for composition between 9 La 2 O 3 - 1 WO 3 and 2 La 2 O 3 - 9 WO 3 were specified under the pressure of 1x10 -6 mbar. After interpretation of x-ray diffraction results, phase diagram of n La 2 O 3 - m WO 3 system under vacuum in equilibrium with metallic tungsten have been deduced. Moreover we underline by these works the fact that using a lanthanum-rich tungstate involves better stability and chemical homogeneity of the cathodes surfaces with temperature. (author)

A vapor generator equipped with an advanced drain device for the secondary side of the tubes plate

International Nuclear Information System (INIS)

Valadon, C.

1995-01-01

A draining design is proposed for the tube plate secondary side in a PWR type reactor, that does not interfere with the water flush 'street' thus allowing for an easy inspection and maintenance in the lower part of the tube bundle. The draining system is composed of a main groove on the upper side of the tube plate, which is connected to draining means situated outside the vapor generator. 6 fig

Suspended tungsten-based nanowires with enhanced mechanical properties grown by focused ion beam induced deposition

Science.gov (United States)

Córdoba, Rosa; Lorenzoni, Matteo; Pablo-Navarro, Javier; Magén, César; Pérez-Murano, Francesc; María De Teresa, José

2017-11-01

The implementation of three-dimensional (3D) nano-objects as building blocks for the next generation of electro-mechanical, memory and sensing nano-devices is at the forefront of technology. The direct writing of functional 3D nanostructures is made feasible by using a method based on focused ion beam induced deposition (FIBID). We use this technique to grow horizontally suspended tungsten nanowires and then study their nano-mechanical properties by three-point bending method with atomic force microscopy. These measurements reveal that these nanowires exhibit a yield strength up to 12 times higher than that of the bulk tungsten, and near the theoretical value of 0.1 times the Young’s modulus (E). We find a size dependence of E that is adequately described by a core-shell model, which has been confirmed by transmission electron microscopy and compositional analysis at the nanoscale. Additionally, we show that experimental resonance frequencies of suspended nanowires (in the MHz range) are in good agreement with theoretical values. These extraordinary mechanical properties are key to designing electro-mechanically robust nanodevices based on FIBID tungsten nanowires.

Kinetics of chemical vapor deposition of boron on molybdenum

International Nuclear Information System (INIS)

Tanaka, W.; Nakaanishi, N.; Kato, E.

1987-01-01

Experimental rate data of chemical vapor deposition of boron by reduction of boron trichloride with hydrogen are analyzed to determine the reaction mechanism. The reaction orders with respect to the partial pressures of hydrogen and boron trichloride are one half and one third, respectively. It has been found that the outer layer of a deposited film is Mo/sub 2/B/sub 5/ and the inner layer is MoB by the use of X-ray diffraction and EPMA line analysis

Advances in the chemical vapor deposition (CVD) of Tantalum

DEFF Research Database (Denmark)

Mugabi, James Atwoki; Eriksen, Søren; Christensen, Erik

2014-01-01

The chemical stability of tantalum in hot acidic media has made it a key material in the protection of industrial equipment from corrosion under such conditions. The Chemical Vapor Deposition of tantalum to achieve such thin corrosion resistant coatings is one of the most widely mentioned examples...

Stress evaluation of chemical vapor deposited silicon dioxide films

International Nuclear Information System (INIS)

Maeda, Masahiko; Itsumi, Manabu

2002-01-01

Film stress of chemical vapor deposited silicon dioxide films was evaluated. All of the deposited films show tensile intrinsic stresses. Oxygen partial pressure dependence of the intrinsic stress is very close to that of deposition rate. The intrinsic stress increases with increasing the deposition rate under the same deposition temperature, and decreases with increasing substrate temperature. Electron spin resonance (ESR) active defects in the films were observed when the films were deposited at 380 deg. C and 450 deg. C. The ESR signal intensity decreases drastically with increasing deposition temperature. The intrinsic stress correlates very closely to the intensity of the ESR-active defects, that is, the films with larger intrinsic stress have larger ESR-active defects. It is considered that the intrinsic stress was generated because the voids caused by local bond disorder were formed during random network formation among the SiO 4 tetrahedra. This local bond disorder also causes the ESR-active defects

The deposition of magnetite particles from high velocity water onto isothermal tubes

International Nuclear Information System (INIS)

Burrill, K.A.

1977-02-01

The deposition rate of magnetite particles from a high velocity water slurry onto isothermal metal tubes was measured. The effects of velocity (5 to 100 m/s), slurry concentration (200 to 1000 mg Fe/kg H 2 O), temperature (25 to 90 deg C), pH (4 to 10 at 25 deg C), and tube material (nickel, Zircaloy-4) on deposition rate were studied. The data are interpreteω in terms of two steps in series for deposition: a mass transfer step followed by a deposition or ''inertial coasting'' step. Mass transfer of particles through the bulk water phase apparently limits the deposition of particles at high Reynolds number (10 5 ). (author)

Development of Y-BA-CU-O Coated Conductor Using Metal Organic Chemical Vapor Deposition

National Research Council Canada - National Science Library

Selvamanickam, V

2003-01-01

.... The program includes a study of the a) influence of MOCVD processing conditions such as the flow rate of precursor vapors, precursor vaporization temperatures, oxygen partial pressure, reactor pressure, and the deposition temperature...

Vapor-deposited non-crystalline phase vs ordinary glasses and supercooled liquids: Subtle thermodynamic and kinetic differences

International Nuclear Information System (INIS)

Bhattacharya, Deepanjan; Sadtchenko, Vlad

2015-01-01

Vapor deposition of molecules on a substrate often results in glassy materials of high kinetic stability and low enthalpy. The extraordinary properties of such glasses are attributed to high rates of surface diffusion during sample deposition, which makes it possible for constituents to find a configuration of much lower energy on a typical laboratory time scale. However, the exact nature of the resulting phase and the mechanism of its formation are not completely understood. Using fast scanning calorimetry technique, we show that out-of-equilibrium relaxation kinetics and possibly the enthalpy of vapor-deposited films of toluene and ethylbenzene, archetypical fragile glass formers, are distinct from those of ordinary supercooled phase even when the deposition takes place at temperatures above the ordinary glass softening transition temperatures. These observations along with the absolute enthalpy dependences on deposition temperatures support the conjecture that the vapor-deposition may result in formation of non-crystalline phase of unique structural, thermodynamic, and kinetic properties

Study of the fluidized bed chemical vapor deposition process on very dense powder for nuclear applications

International Nuclear Information System (INIS)

Vanni, Florence

2015-01-01

This thesis is part of the development of low-enriched nuclear fuel, for the Materials Test Reactors (MTRs), constituted of uranium-molybdenum particles mixed with an aluminum matrix. Under certain conditions under irradiations, the U(Mo) particles interact with the aluminum matrix, causing unacceptable swelling of the fuel plate. To inhibit this phenomenon, one solution consists in depositing on the surface of the U(Mo) particles, a thin silicon layer to create a barrier effect. This thesis has concerned the study of the fluidized bed chemical vapor deposition (CVD) process to deposit silicon from silane, on the U(Mo) powder, which has an exceptional density of 17,500 kg/m 3 . To achieve this goal, two axes were treated during the thesis: the study and the optimization of the fluidization of a so dense powder, and then those of the silicon deposition process. For the first axis, a series of tests was performed on a surrogate tungsten powder in different columns made of glass and made of steel with internal diameters ranging from 2 to 5 cm, at room temperature and at high temperature (650 C) close to that of the deposits. These experiments helped to identify wall effects phenomena within the fluidized bed, which can lead to heterogeneous deposits or particles agglomeration. Some dimensions of the fluidization columns and operating conditions allowing a satisfactory fluidization of the powder were identified, paving the way for the study of silicon deposition. Several campaigns of deposition experiments on the surrogate powder and then on the U(Mo) powder were carried out in the second axis of the study. The influence of the bed temperature, the inlet molar fraction of silane diluted in argon, and the total gas flow of fluidization, was examined for different diameters of reactor and for various masses of powder. Morphological and structural characterization analyses (SEM, XRD..) revealed a uniform silicon deposition on all the powder and around each particle

Carbon and tungsten effect on characteristics of sputtered and re-deposited beryllium target layers under deuteron bombardment

International Nuclear Information System (INIS)

Danelyan, L.S.; Gureev, V.M.; Elistratov, N.G.

2004-01-01

The behavior of the plasma facing Be-elements in the International Thermonuclear Experimental Reactor ITER will be affected by the re-deposition of other eroded plasma facing materials. The effect of carbon- and tungsten-additions on the microstructure, chemical composition and hydrogen isotope accumulation in the sputtered and re-deposited layers of beryllium TGP-56 at its interaction with 200 - 300 eV hydrogen isotope ions was studied in the MAGRAS facility equipped with a magnetron sputtering system. (author)

Changes in the structural and electrical properties of vacuum post-annealed tungsten- and titanium-doped indium oxide films deposited by radio frequency magnetron sputtering

NARCIS (Netherlands)

Yan, L.T.; Schropp, R.E.I.

2011-01-01

Tungsten- and titanium-doped indium oxide (IWO and ITiO) filmswere deposited at room temperature by radio frequency (RF) magnetron sputtering, and vacuum post-annealing was used to improve the electron mobility. With increasing deposition power, the as deposited films showed an increasingly

Mechanistic, kinetic, and processing aspects of tungsten chemical mechanical polishing

Science.gov (United States)

Stein, David

This dissertation presents an investigation into tungsten chemical mechanical polishing (CMP). CMP is the industrially predominant unit operation that removes excess tungsten after non-selective chemical vapor deposition (CVD) during sub-micron integrated circuit (IC) manufacture. This work explores the CMP process from process engineering and fundamental mechanistic perspectives. The process engineering study optimized an existing CMP process to address issues of polish pad and wafer carrier life. Polish rates, post-CMP metrology of patterned wafers, electrical test data, and synergy with a thermal endpoint technique were used to determine the optimal process. The oxidation rate of tungsten during CMP is significantly lower than the removal rate under identical conditions. Tungsten polished without inhibition during cathodic potentiostatic control. Hertzian indenter model calculations preclude colloids of the size used in tungsten CMP slurries from indenting the tungsten surface. AFM surface topography maps and TEM images of post-CMP tungsten do not show evidence of plow marks or intergranular fracture. Polish rate is dependent on potassium iodate concentration; process temperature is not. The colloid species significantly affects the polish rate and process temperature. Process temperature is not a predictor of polish rate. A process energy balance indicates that the process temperature is predominantly due to shaft work, and that any heat of reaction evolved during the CMP process is negligible. Friction and adhesion between alumina and tungsten were studied using modified AFM techniques. Friction was constant with potassium iodate concentration, but varied with applied pressure. This corroborates the results from the energy balance. Adhesion between the alumina and the tungsten was proportional to the potassium iodate concentration. A heuristic mechanism, which captures the relationship between polish rate, pressure, velocity, and slurry chemistry, is presented

MgB2 thin films by hybrid physical-chemical vapor deposition

International Nuclear Information System (INIS)

Xi, X.X.; Pogrebnyakov, A.V.; Xu, S.Y.; Chen, K.; Cui, Y.; Maertz, E.C.; Zhuang, C.G.; Li, Qi; Lamborn, D.R.; Redwing, J.M.; Liu, Z.K.; Soukiassian, A.; Schlom, D.G.; Weng, X.J.; Dickey, E.C.; Chen, Y.B.; Tian, W.; Pan, X.Q.; Cybart, S.A.; Dynes, R.C.

2007-01-01

Hybrid physical-chemical vapor deposition (HPCVD) has been the most effective technique for depositing MgB 2 thin films. It generates high magnesium vapor pressures and provides a clean environment for the growth of high purity MgB 2 films. The epitaxial pure MgB 2 films grown by HPCVD show higher-than-bulk T c due to tensile strain in the films. The HPCVD films are the cleanest MgB 2 materials reported, allowing basic research, such as on magnetoresistance, that reveals the two-band nature of MgB 2 . The carbon-alloyed HPCVD films demonstrate record-high H c2 values promising for high magnetic field applications. The HPCVD films and multilayers have enabled the fabrication of high quality MgB 2 Josephson junctions

Zno Micro/Nanostructures Grown on Sapphire Substrates Using Low-Temperature Vapor-Trapped Thermal Chemical Vapor Deposition: Structural and Optical Properties

Directory of Open Access Journals (Sweden)

Po-Sheng Hu

2017-12-01

Full Text Available In this research, the Zn(C5H7O22·xH2O-based growth of ZnO micro/nanostructures in a low temperature, vapor-trapped chemical vapor deposition system was attempted to optimize structural and optical properties for potential biomedical applications. By trapping in-flow gas molecules and Zinc vapor inside a chamber tube by partially obstructing a chamber outlet, a high pressure condition can be achieved, and this experimental setup has the advantages of ease of synthesis, being a low temperature process, and cost effectiveness. Empirically, the growth process proceeded under a chamber condition of an atmospheric pressure of 730 torr, a controlled volume flow rate of input gas, N2/O2, of 500/500 Standard Cubic Centimeters per Minute (SCCM, and a designated oven temperature of 500 °C. Specifically, the dependence of structural and optical properties of the structures on growth duration and spatially dependent temperature were investigated utilizing scanning electron microscopy, X-ray diffraction (XRD, photoluminescence (PL, and ultraviolet-visible transmission spectroscopy. The experimental results indicate that the grown thin film observed with hexagonal structures and higher structural uniformity enables more prominent structural and optical signatures. XRD spectra present the dominant peaks along crystal planes of (002 and (101 as the main direction of crystallization. In addition, while the structures excited with laser wavelength of 325 nm emit a signature radiation around 380 nm, an ultraviolet lamp with a wavelength of 254 nm revealed distinctive photoluminescence peaks at 363.96 nm and 403.52 nm, elucidating different degrees of structural correlation as functions of growth duration and the spatial gradient of temperature. Transmittance spectra of the structures illustrate typical variation in the wavelength range of 200 nm to 400 nm, and its structural correlation is less significant when compared with PL.

Tungsten fibre-reinforced composites for advanced plasma facing components

Directory of Open Access Journals (Sweden)

R. Neu

2017-08-01

Full Text Available The European Fusion Roadmap foresees water cooled plasma facing components in a first DEMO design in order to provide enough margin for the cooling capacity and to only moderately extrapolate the technology which was developed and tested for ITER. In order to make best use of the water cooling concept copper (Cu and copper-chromium-zirconium alloy (CuCrZr are envisaged as heat sink whereas as armour tungsten (W based materials will be used. Combining both materials in a high heat flux component asks for an increase of their operational range towards higher temperature in case of Cu/CuCrZr and lower temperatures for W. A remedy for both issues- brittleness of W and degrading strength of CuCrZr- could be the use of W fibres (Wf in W and Cu based composites. Fibre preforms could be manufactured with industrially viable textile techniques. Flat textiles with a combination of 150/70 µm W wires have been chosen for layered deposition of tungsten-fibre reinforced tungsten (Wf/W samples and tubular multi-layered braidings with W wire thickness of 50 µm were produced as a preform for tungsten-fibre reinforced copper (Wf /Cu tubes. Cu melt infiltration was performed together with an industrial partner resulting in sample tubes without any blowholes. Property estimation by mean field homogenisation predicts strongly enhanced strength of the Wf/CuCrZr composite compared to its pure CuCrZr counterpart. Wf /W composites show very high toughness and damage tolerance even at room temperature. Cyclic load tests reveal that the extrinsic toughening mechanisms counteracting the crack growth are active and stable. FEM simulations of the Wf/W composite suggest that the influence of fibre debonding, which is an integral part of the toughening mechanisms, and reduced thermal conductivity of the fibre due to the necessary interlayers do not strongly influence the thermal properties of future components.

Synthesis of Tungsten Diselenide Nanoparticles by Chemical Vapor Condensation Method

Directory of Open Access Journals (Sweden)

Oleg V. Tolochko

2015-09-01

Full Text Available Crystalline tungsten diselenide (WSe2 nanoparticles have been synthesized by a gas phase reaction using tungsten hexacarbonyl and elemental selenium as precursors. The WSe2 nanoparticle morphology varies from the spherical shape to flake-like layered structures. Mean size in smaller dimension are less than 5 nm and the number of layers decreased linearly with decreasing of reaction time and concentration of carbonyl in the gas phase. The mean value of interlayer distance in <0001> direction is comparable with the microscopic values. The selenium-to-tungsten atomic ratios of 2.07, 2.19 and 2.19 were determined respectively, approach to the stoichiometric ratio of 2:1. Main impurities are oxygen and carbon and strongly interrelated with carbonyl concentration in the gas phase.DOI: http://dx.doi.org/10.5755/j01.ms.21.3.7356

Differences in Nanosecond Laser Ablation and Deposition of Tungsten, Boron, and WB2/B Composite due to Optical Properties

Directory of Open Access Journals (Sweden)

Tomasz Moscicki

2016-01-01

Full Text Available The first attempt to the deposition of WB3 films using nanosecond Nd:YAG laser demonstrated that deposited coatings are superhard. However, they have very high roughness. The deposited films consisted mainly of droplets. Therefore, in the present work, the explanation of this phenomenon is conducted. The interaction of Nd:YAG nanosecond laser pulse with tungsten, boron, and WB2/B target during ablation is investigated. The studies show the fundamental differences in ablation of those materials. The ablation of tungsten is thermal and occurs due to only evaporation. In the same conditions, during ablation of boron, the phase explosion and/or fragmentation due to recoil pressure is observed. The deposited films have a significant contribution of big debris with irregular shape. In the case of WB2/B composite, ablation is significantly different. The ablation seems to be the detonation in the liquid phase. The deposition mechanism is related mainly to the mechanical transport of the target material in the form of droplets, while the gaseous phase plays marginal role. The main origin of differences is optical properties of studied materials. A method estimating phase explosion occurrence based on material data such as critical temperature, thermal diffusivity, and optical properties is shown. Moreover, the effect of laser wavelength on the ablation process and the quality of the deposited films is discussed.

Communication: Surface-facilitated softening of ordinary and vapor-deposited glasses

Science.gov (United States)

Cubeta, Ulyana; Bhattacharya, Deepanjan; Sadtchenko, Vlad

2017-08-01

A common distinction between the ordinary glasses formed by melt cooling and the stable amorphous films formed by vapor deposition is the apparent mechanism of their devitrification. Using quasi-adiabatic, fast scanning calorimetry that is capable of heating rates in excess of 105 K s-1, we have investigated the softening kinetics of micrometer-scale, ordinary glass films of methylbenzene and 2-propanol. At the limit of high heating rates, the transformation mechanism of ordinary glasses is identical to that of their stable vapor-deposited counterparts. In both cases, softening is likely to begin at the sample surface and progress into its bulk via a transformation front. Furthermore, such a surface-facilitated mechanism complies with zero-order, Arrhenius rate law. The activation energy barriers for the softening transformation imply that the kinetics must be defined, at least in part, by the initial thermodynamic and structural state of the samples.

Physical vapor deposition of cubic boron nitride thin films

International Nuclear Information System (INIS)

Kester, D.J.

1991-01-01

Cubic boron nitride was successfully deposited using physical vapor-deposition methods. RF-sputtering, magnetron sputtering, dual-ion-beam deposition, and ion-beam-assisted evaporation were all used. The ion-assisted evaporation, using boron evaporation and bombardment by nitrogen and argon ions, led to successful cubic boron nitride growth over the widest and most controllable range of conditions. It was found that two factors were important for c-BN growth: bombardment of the growing film and the presence of argon. A systematic study of the deposition conditions was carried out. It was found that the value of momentum transferred into the growing from by the bombarding ions was critical. There was a very narrow transition range in which mixed cubic and hexagonal phase films were prepared. Momentum-per-atom value took into account all the variables involved in ion-assisted deposition: deposition rate, ion energy, ion flux, and ion species. No other factor led to the same control of the process. The role of temperature was also studied; it was found that at low temperatures only mixed cubic and hexagonal material are deposited

Development of amorphous silicon based EUV hardmasks through physical vapor deposition

Science.gov (United States)

De Silva, Anuja; Mignot, Yann; Meli, Luciana; DeVries, Scott; Xu, Yongan; Seshadri, Indira; Felix, Nelson M.; Zeng, Wilson; Cao, Yong; Phan, Khoi; Dai, Huixiong; Ngai, Christopher S.; Stolfi, Michael; Diehl, Daniel L.

2017-10-01

Extending extreme ultraviolet (EUV) single exposure patterning to its limits requires more than photoresist development. The hardmask film is a key contributor in the patterning stack that offers opportunities to enhance lithographic process window, increase pattern transfer efficiency, and decrease defectivity when utilizing very thin film stacks. This paper introduces the development of amorphous silicon (a-Si) deposited through physical vapor deposited (PVD) as an alternative to a silicon ARC (SiARC) or silicon-oxide-type EUV hardmasks in a typical trilayer patterning scheme. PVD offers benefits such as lower deposition temperature, and higher purity, compared to conventional chemical vapor deposition (CVD) techniques. In this work, sub-36nm pitch line-space features were resolved with a positive-tone organic chemically-amplified resist directly patterned on PVD a-Si, without an adhesion promotion layer and without pattern collapse. Pattern transfer into the underlying hardmask stack was demonstrated, allowing an evaluation of patterning metrics related to resolution, pattern transfer fidelity, and film defectivity for PVD a-Si compared to a conventional tri-layer patterning scheme. Etch selectivity and the scalability of PVD a-Si to reduce the aspect ratio of the patterning stack will also be discussed.

Simulating Porous Magnetite Layer Deposited on Alloy 690TT Steam Generator Tubes.

Science.gov (United States)

Jeon, Soon-Hyeok; Son, Yeong-Ho; Choi, Won-Ik; Song, Geun Dong; Hur, Do Haeng

2018-01-02

In nuclear power plants, the main corrosion product that is deposited on the outside of steam generator tubes is porous magnetite. The objective of this study was to simulate porous magnetite that is deposited on thermally treated (TT) Alloy 690 steam generator tubes. A magnetite layer was electrodeposited on an Alloy 690TT substrate in an Fe(III)-triethanolamine solution. After electrodeposition, the dense magnetite layer was immersed to simulate porous magnetite deposits in alkaline solution for 50 days at room temperature. The dense morphology of the magnetite layer was changed to a porous structure by reductive dissolution reaction. The simulated porous magnetite layer was compared with flakes of steam generator tubes, which were collected from the secondary water system of a real nuclear power plant during sludge lancing. Possible nuclear research applications using simulated porous magnetite specimens are also proposed.

Chemical vapor deposition of refractory metals and ceramics III

International Nuclear Information System (INIS)

Gallois, B.M.; Lee, W.Y.; Pickering, M.A.

1995-01-01

The papers contained in this volume were originally presented at Symposium K on Chemical Vapor Deposition of Refractory Metals and Ceramics III, held at the Fall Meeting of the Materials Research Society in Boston, Massachusetts, on November 28--30, 1994. This symposium was sponsored by Morton International Inc., Advanced Materials, and by The Department of Energy-Oak Ridge National Laboratory. The purpose of this symposium was to exchange scientific information on the chemical vapor deposition (CVD) of metallic and ceramic materials. CVD technology is receiving much interest in the scientific community, in particular, to synthesize new materials with tailored chemical composition and physical properties that offer multiple functionality. Multiphase or multilayered films, functionally graded materials (FGMs), ''smart'' material structures and nanocomposites are some examples of new classes of materials being produced via CVD. As rapid progress is being made in many interdisciplinary research areas, this symposium is intended to provide a forum for reporting new scientific results and addressing technological issues relevant to CVD materials and processes. Thirty four papers have been processed separately for inclusion on the data base

Chemical vapor deposition of Si/SiC nano-multilayer thin films

International Nuclear Information System (INIS)

Weber, A.; Remfort, R.; Woehrl, N.; Assenmacher, W.; Schulz, S.

2015-01-01

Stoichiometric SiC films were deposited with the commercially available single source precursor Et_3SiH by classical thermal chemical vapor deposition (CVD) as well as plasma-enhanced CVD at low temperatures in the absence of any other reactive gases. Temperature-variable deposition studies revealed that polycrystalline films containing different SiC polytypes with a Si to carbon ratio of close to 1:1 are formed at 1000 °C in thermal CVD process and below 100 °C in the plasma-enhanced CVD process. The plasma enhanced CVD process enables the reduction of residual stress in the deposited films and offers the deposition on temperature sensitive substrates in the future. In both deposition processes the film thickness can be controlled by variation of the process parameters such as the substrate temperature and the deposition time. The resulting material films were characterized with respect to their chemical composition and their crystallinity using scanning electron microscope, energy dispersive X-ray spectroscopy (XRD), atomic force microscopy, X-ray diffraction, grazing incidence X-ray diffraction, secondary ion mass spectrometry and Raman spectroscopy. Finally, Si/SiC multilayers of up to 10 individual layers of equal thickness (about 450 nm) were deposited at 1000 °C using Et_3SiH and SiH_4. The resulting multilayers features amorphous SiC films alternating with Si films, which feature larger crystals up to 300 nm size as measured by transmission electron microscopy as well as by XRD. XRD features three distinct peaks for Si(111), Si(220) and Si(311). - Highlights: • Stoichiometric silicon carbide films were deposited from a single source precursor. • Thermal as well as plasma-enhanced chemical vapor deposition was used. • Films morphology, crystallinity and chemical composition were characterized. • Silicon/silicon carbide multilayers of up to 10 individual nano-layers were deposited.

Plasma-enhanced chemical vapor deposition of aluminum oxide using ultrashort precursor injection pulses

NARCIS (Netherlands)

Dingemans, G.; Sanden, van de M.C.M.; Kessels, W.M.M.

2012-01-01

An alternative plasma-enhanced chemical vapor deposition (PECVD) method is developed and applied for the deposition of high-quality aluminum oxide (AlOx) films. The PECVD method combines a continuous plasma with ultrashort precursor injection pulses. We demonstrate that the modulation of the

Chemical vapor deposition: A technique for applying protective coatings

Energy Technology Data Exchange (ETDEWEB)

Wallace, T.C. Sr.; Bowman, M.G.

1979-01-01

Chemical vapor deposition is discussed as a technique for applying coatings for materials protection in energy systems. The fundamentals of the process are emphasized in order to establish a basis for understanding the relative advantages and limitations of the technique. Several examples of the successful application of CVD coating are described. 31 refs., and 18 figs.

CMAS Interactions with Advanced Environmental Barrier Coatings Deposited via Plasma Spray- Physical Vapor Deposition

Science.gov (United States)

Harder, B. J.; Wiesner, V. L.; Zhu, D.; Johnson, N. S.

2017-01-01

Materials for advanced turbine engines are expected to have temperature capabilities in the range of 1370-1500C. At these temperatures the ingestion of sand and dust particulate can result in the formation of corrosive glass deposits referred to as CMAS. The presence of this glass can both thermomechanically and thermochemically significantly degrade protective coatings on metallic and ceramic components. Plasma Spray- Physical Vapor Deposition (PS-PVD) was used to deposit advanced environmental barrier coating (EBC) systems for investigation on their interaction with CMAS compositions. Coatings were exposed to CMAS and furnace tested in air from 1 to 50 hours at temperatures ranging from 1200-1500C. Coating composition and crystal structure were tracked with X-ray diffraction and microstructure with electron microscopy.

Superconducting magnesium diboride coatings for radio frequency cavities fabricated by hybrid physical-chemical vapor deposition

Directory of Open Access Journals (Sweden)

M. A. Wolak

2014-01-01

Full Text Available We have investigated the coating of an inner surface of superconducting radio frequency cavities with a magnesium diboride thin film by hybrid physical-chemical vapor deposition (HPCVD. To simulate a 6 GHz rf cavity, a straight stainless steel tube of 1.5-inch inner diameter and a dummy stainless steel cavity were employed, on which small sapphire and metal substrates were mounted at different locations. The MgB_{2} films on these substrates showed uniformly good superconducting properties including T_{c} of 37–40 K, residual resistivity ratio of up to 14, and root-mean-square roughness R_{q} of 20–30 nm. This work demonstrates the feasibility of coating the interior of cylindrical and curved objects with MgB_{2} by the HPCVD technique, an important step towards superconducting rf cavities with MgB_{2} coating.

Thermal Spray Coating of Tungsten for Tokamak Device

International Nuclear Information System (INIS)

Jiang Xianliang; Gitzhofer, F; Boulos, M I

2006-01-01

Thermal spray, such as direct current (d.c.) plasma spray or radio frequency induced plasma spray, was used to deposit tungsten coatings on the copper electrodes of a tokamak device. The tungsten coating on the outer surface of one copper electrode was formed directly through d.c. plasma spraying of fine tungsten powder. The tungsten coating/lining on the inner surface of another copper electrode could be formed indirectly through induced plasma spraying of coarse tungsten powder. Scanning electron microscopy (SEM) was used to examine the cross section and the interface of the tungsten coating. Energy Dispersive Analysis of X-ray (EDAX) was used to analyze the metallic elements attached to a separated interface. The influence of the particle size of the tungsten powder on the density, cracking behavior and adhesion of the coating is discussed. It is found that the coarse tungsten powder with the particle size of 45 ∼ 75 μm can be melted and the coating can be formed only by using induced plasma. The coating deposited from the coarse powder has much higher cohesive strength, adhesive strength and crack resistance than the coating made from the fine powder with a particle size of 5 μm

Chemical vapor deposition (CVD) of uranium for alpha spectrometry; Deposicion quimica de vapor (CVD) de uranio para espectrometria alfa

Energy Technology Data Exchange (ETDEWEB)

Ramirez V, M. L.; Rios M, C.; Ramirez O, J.; Davila R, J. I.; Mireles G, F., E-mail: luisalawliet@gmail.com [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico)

2015-09-15

The uranium determination through radiometric techniques as alpha spectrometry requires for its proper analysis, preparation methods of the source to analyze and procedures for the deposit of this on a surface or substrate. Given the characteristics of alpha particles (small penetration distance and great loss of energy during their journey or its interaction with the matter), is important to ensure that the prepared sources are thin, to avoid problems of self-absorption. The routine methods used for this are the cathodic electro deposition and the direct evaporation, among others. In this paper the use of technique of chemical vapor deposition (CVD) for the preparation of uranium sources is investigated; because by this, is possible to obtain thin films (much thinner than those resulting from electro deposition or evaporation) on a substrate and comprises reacting a precursor with a gas, which in turn serves as a carrier of the reaction products to achieve deposition. Preliminary results of the chemical vapor deposition of uranium are presented, synthesizing and using as precursor molecule the uranyl acetylacetonate, using oxygen as carrier gas for the deposition reaction on a glass substrate. The uranium films obtained were found suitable for alpha spectrometry. The variables taken into account were the precursor sublimation temperatures and deposition temperature, the reaction time and the type and flow of carrier gas. Of the investigated conditions, two depositions with encouraging results that can serve as reference for further work to improve the technique presented here were selected. Alpha spectra obtained for these depositions and the characterization of the representative samples by scanning electron microscopy and X-ray diffraction are also presented. (Author)

Thin film deposition and characterization of pure and iron-doped electron-beam evaporated tungsten oxide for gas sensors

Energy Technology Data Exchange (ETDEWEB)

Tesfamichael, Tuquabo, E-mail: t.tesfamichael@qut.edu.a [Faculty of Built Environment and Engineering, School of Engineering Systems, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia); Arita, Masashi [Graduate School of Information Science and Technology, Hokkaido University, Kita-14, Nishi-9, Kita-ku, Sapporo, 060-0814 (Japan); Bostrom, Thor [Faculty of Science and Technology, School of Physical and Chemical Sciences, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia); Bell, John [Centre for Built Environment and Engineering Research, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia)

2010-06-30

Pure tungsten oxide (WO{sub 3}) and iron-doped (10 at.%) tungsten oxide (WO{sub 3}:Fe) nanostructured thin films were prepared using a dual crucible Electron Beam Evaporation (EBE) technique. The films were deposited at room temperature under high vacuum onto glass as well as alumina substrates and post-heat treated at 300 {sup o}C for 1 h. Using Raman spectroscopy the as-deposited WO{sub 3} and WO{sub 3}:Fe films were found to be amorphous, however their crystallinity increased after annealing. The estimated surface roughness of the films was similar (of the order of 3 nm) to that determined using Atomic Force Microscopy (AFM). As observed by AFM, the WO{sub 3}:Fe film appeared to have a more compact surface as compared to the more porous WO{sub 3} film. X-ray photoelectron spectroscopy analysis showed that the elemental stoichiometry of the tungsten oxide films was consistent with WO{sub 3}. A slight difference in optical band gap energies was found between the as-deposited WO{sub 3} (3.22 eV) and WO{sub 3}:Fe (3.12 eV) films. The differences in the band gap energies of the annealed films were significantly higher, having values of 3.12 eV and 2.61 eV for the WO{sub 3} and WO{sub 3}:Fe films respectively. The heat treated films were investigated for gas sensing applications using noise spectroscopy. It was found that doping of Fe to WO{sub 3} produced gas selectivity but a reduced gas sensitivity as compared to the WO{sub 3} sensor.

Reflood Heat Transfer in SiC and Graphene Oxide Coated Tube

International Nuclear Information System (INIS)

Kim, Kyung Mo; Lee, Seung Won; Bang, In Cheol

2013-01-01

The reflood tests have been performed flowing water into bare tube and nanoparticles coated tube at constant flow rate (3 cm/s). The quenching curves have been obtained at atmospheric pressure. Finally, Scanning Electron Microscopy (SEM) images are acquired and contact angles are measured in order to observe the surface structures and wettability effect on cooling performance. The quenching time decreases and quenching velocity increases as the coating time of nanoparticles on the tube increases, because the nanoparticles deposited on the tube destabilize and rupture the vapor film early in the effect of increased Leidenfrost point temperature. The SiC nanoparticles coated tubes have better quenching performance than GO nanoparticles coated tubes. The SEM images and contact angle observations proved the enhanced wettability and rough surface due to deposition of SiC nanoparticles. And the wettability of GO nanoparticles coated tubes shows the increase at 600 s coating. But, the wettability decreases on GO nanoparticles tube coated for 900 s despite the enhanced quenching performance. Thus, the porous structure affects to the better cooling performance in case of GO nanoparticles coated tubes

Recent Advances in Atmospheric Vapor-Phase Deposition of Transparent and Conductive Zinc Oxide

NARCIS (Netherlands)

Illiberi, A.; Poodt, P.; Roozeboom, F.

2014-01-01

The industrial need for high-throughput and low-cost ZnO deposition processes has triggered the development of atmospheric vapor-phase deposition techniques which can be easily applied to continuous, in-line manufacturing. While atmospheric CVD is a mature technology, new processes for the growth of

Hideout of sea water impurities in steam generator tube deposits: laboratory and field studies

International Nuclear Information System (INIS)

Balakrishnan, P.V.; Turner, C.W.; Thompson, R.; Sawochka, S.

1996-01-01

Sea water impurities hide out within thin (∼10 μm) deposits on steam generator tubes, as demonstrated by both laboratory studies using segments of fouled steam generator tubes pulled in 1992 from Crystal River-3 nuclear power station and field hideout return studies performed during recent plant shutdowns. Laboratory tests performed at 279 o C (534 o F) and heat fluxes ranging from 35 to 114 kW/m 2 (11,100 - 36,150 Btu/h.ft 2 ), conditions typical of the lower tubesheet to the first support plate region of a once-through steam generator, showed that impurity hideout can occur in thin free-span tube deposits. The extent of hideout increased with increasing heat flux. Soluble species, such as sodium and chloride ions, returned promptly to the bulk water from the deposits when the heat flux was turned off, whereas less soluble species, such as calcium sulfate and magnesium hydroxide, returned more slowly. Recent field hideout return studies performed at Crystal River-3 where the water level in the steam generators was maintained below the first tube support plate during the shutdown, thus wetting only the thin deposits in the free span and the small sludge pile, corroborate the laboratory findings, showing that hideout does indeed occur in the free-span regions of the tubes. These findings suggest that hideout within tube deposits has to be accounted for in the calculation of crevice chemistry from hideout return studies and in controlling the bulk chemistry using the molar ratio criterion. (author). 3 refs., 4 tabs., 3 figs

Mechanism research on coupling effect between dew point corrosion and ash deposition

International Nuclear Information System (INIS)

Wang, Yun-Gang; Zhao, Qin-Xin; Zhang, Zhi-Xiang; Zhang, Zhi-Chao; Tao, Wen-Quan

2013-01-01

In order to study the coupling mechanism between ash deposition and dew point corrosion, five kinds of tube materials frequently used as anti-dew point corrosion materials were selected as research objects. Dew point corrosion and ash deposition experiments were performed with a new type experimental device in a Chinese thermal power plant. The microstructures of the materials and the composition of ash deposition were analyzed by X-ray diffraction (XRD) and Energy Dispersive Spectrometer (EDS). The results showed that the ash deposition layer could be divided into non-condensation zone, the main condensation zone and the secondary condensation zone. The acid vapor condensed in the main condensation zone rather than directly on the tube wall surface. The dew point corrosion mainly is oxygen corrosion under the condition of the viscosity ash deposition, and the corrosion products are composed of the ash and acid reaction products in the outer layer, iron sulfate in the middle layer, and iron oxide in the inner layer. The innermost layer is the main corrosion layer. With the increase of the tube wall temperature, the ash deposition changes from the viscosity ash deposition to the dry loose ash deposition, the ash deposition rate decreases dramatically and dew point corrosion is alleviated efficiently. The sulfuric dew point corrosion resistance of the five test materials is as follows: 316L > ND > Corten>20G > 20 steel. -- Highlights: ► Dew point corrosion and ash deposition tests of five materials were performed. ► Acid vapor condensed in the ash deposit rather than directly on the tube surface. ► Dew point corrosion resistance is as follow: 316L > ND > Corten>20G > 20 steel. ► Dew point corrosion mainly is oxygen corrosion under viscosity ash deposition

The synthesis and characterization of tributyl phosphate grafted carbon nano-tubes by the floating catalytic chemical vapor deposition method and their sorption behavior towards uranium

International Nuclear Information System (INIS)

Shruti Mishra; Jaya Dwivedi; Amar Kumar; Nalini Sankararamakrishnan

2016-01-01

Carbon nano-tubes (CNTs) were synthesized by the floating catalytic chemical vapor deposition technique using ferrocene in benzene as the hydrocarbon source. The functionalization of CNTs was carried out by oxidation (CNT-OX) and grafting with a tributyl phosphate (TBP) ligand (CNT-TBP). Various spectroscopic techniques including scanning electron microscopy (SEM), Fourier Transform Infra Red Spectroscopy (FTIR), BET surface area and X-ray photoelectron spectroscopy (XPS) were used to characterize the adsorbents. FTIR and XPS studies revealed the efficient grafting of the TBP ligand on the CNT surface. The effect of the initial pH and the contact time for the maximum adsorption of U(VI) with CNT-plain, CNT-OX and CNT-TBP was studied. The spontaneity of the sorption was confirmed by thermodynamic data. A pseudo second order model with a regression coefficient of ≥0.978 was obtained for CNT-TBP and equilibrium was reached within 3 h. The Langmuir maximum adsorption capacity of U(VI) at pH 5 for CNT, CNT-OX and CNT-TBP was found to be 66.6, 100.0 and 166.6 mg.g -1 respectively. Using 0.1 M HCl as a de-sorbent, recyclability studies were carried out for three cycles. The probable mechanism of adsorption between U(VI) and CNT-TBP could be understood through FTIR and XPS techniques. (authors)

Selective CVD tungsten on silicon implanted SiO/sub 2/

International Nuclear Information System (INIS)

Hennessy, W.A.; Ghezzo, M.; Wilson, R.H.; Bakhru, H.

1988-01-01

The application range of selective CVD tungsten is extended by its coupling to the ion implantation of insulating materials. This article documents the results of selective CVD tungsten using silicon implanted into SiO/sub 2/ to nucleate the tungsten growth. The role of implant does, energy, and surface preparation in achieving nucleation are described. SEM micrographs are presented to demonstrate the selectivity of this process. Measurements of the tungsten film thickness and sheet resistance are provided for each of the experimental variants corresponding to successful deposition. RBS and XPS analysis are discussed in terms of characterizing the tungsten/oxide interface and to evaluate the role of the silicon implant in the CVD tungsten mechanism. Utilizing this method a desired metallization pattern can be readily defined with lithography and ion implantation, and accurately replicated with a layer of CVD tungsten. This approach avoids problems usually associated with blanket deposition and pattern transfer, which are particularly troublesome for submicron VLSI technology

Protective coating of inner surface of steel tubes via vacuum arc deposition

Energy Technology Data Exchange (ETDEWEB)

Maile, K.; Roos, E.; Lyutovich, A.; Boese, J.; Itskov, M. [Stuttgart Univ. (DE). Materialpruefungsanstalt (MPA); Ashurov, Kh.; Mirkarimov, A.; Kazantsev, S.; Kadirov, Kh. [Uzbek Academy of Science, Tashkent (Uzbekistan). Arifov Inst. of Electronics

2010-07-01

The Vacuum Arc Deposition (VAD) technique based on sputtering a chosen electrode material and its deposition via plasma allows highly-productive technology for creating a wide class of protecting coatings on complex structures. In this work, VAD was applied as a method for the protection of the inner surface of tubes for power-plant boilers against steam oxidation. For this aim, a source cathode of an alloy with high chromium and nickel content was employed in two different VAD treatment systems: a horizontal vacuum chamber (MPA) and a vertical system where the work-piece of the tubes to be protected served as a vacuum changer (Arifov Institute of Electronics). Surface coating with variation of deposition parameters and layer thickness was performed. Characterisation of coated tubes has shown that the method realised in this work allows attainment of material transfer from the cathode to the inner surface with nearly equal chemical composition. It was demonstrated that the initial martensitic structure of the tubes was kept after the vacuum-arc treatment which can provide for both the high mechanical robustness and the corrosion-resistance of the final material. (orig.)

Gaseous material capacity of open plasma jet in plasma spray-physical vapor deposition process

Science.gov (United States)

Liu, Mei-Jun; Zhang, Meng; Zhang, Qiang; Yang, Guan-Jun; Li, Cheng-Xin; Li, Chang-Jiu

2018-01-01

Plasma spray-physical vapor deposition (PS-PVD) process, emerging as a highly efficient hybrid approach, is based on two powerful technologies of both plasma spray and physical vapor deposition. The maximum production rate is affected by the material feed rate apparently, but it is determined by the material vapor capacity of transporting plasma actually and essentially. In order to realize high production rate, the gaseous material capacity of plasma jet must be fundamentally understood. In this study, the thermal characteristics of plasma were measured by optical emission spectrometry. The results show that the open plasma jet is in the local thermal equilibrium due to a typical electron number density from 2.1 × 1015 to 3.1 × 1015 cm-3. In this condition, the temperature of gaseous zirconia can be equal to the plasma temperature. A model was developed to obtain the vapor pressure of gaseous ZrO2 molecules as a two dimensional map of jet axis and radial position corresponding to different average plasma temperatures. The overall gaseous material capacity of open plasma jet, take zirconia for example, was further established. This approach on evaluating material capacity in plasma jet would shed light on the process optimization towards both depositing columnar coating and a high production rate of PS-PVD.

Phase diagram of interfacial growth modes by vapor deposition and its application for ZnO nanostructures

Science.gov (United States)

Shu, Da-Jun; Xiong, Xiang; Liu, Ming; Wang, Mu

2017-09-01

Interfacial growth from vapor has been extensively studied. However, a straightforward picture of the growth mode under different growth conditions is still lacking. In this paper, we develop a comprehensive interfacial growth theory based on the stochastic approach. Using a critical interisland separation, we construct a general phase diagram of the growth modes. It has been revealed that if the Ehrlich-Schwoebel barrier EES is smaller than a critical value, the interfacial growth proceeds in a layer-by-layer (LBL) mode at any deposition rate. However, if EES is larger than the critical value, LBL growth occurs only at very small or very large deposition rates relative to the intralayer hopping rate, and multilayer (ML) growth occurs at a moderate deposition rate. Experiments with zinc oxide growth by chemical vapor deposition have been designed to qualitatively demonstrate the theoretical model. By changing the flux of the carrier gas (nitrogen gas) in chemical vapor deposition, we realize LBL, ML, and then reentrance of LBL homoepitaxial growth of ZnO successively. Moreover, we find that surface kinetics of ZnO is suppressed by decreasing oxygen partial pressure by comparing the experimental observations and theoretical models, which is supported by our recent first-principles calculations. Since the influence of the substrate and the growth species on growth can approximately be represented by binding energy and surface kinetics, we suggest that the phase diagram is essential for interfacial growth of different materials by vapor deposition.

Effects of deposited pyrolytic carbon on some mechanical properties of zircaloy-4 tubes. Vol. 3

Energy Technology Data Exchange (ETDEWEB)

Shrkawy, S W; Abdel-razek, I D; El-Sayed, H A [Metallurgy Department, Nuclear Research Center, Atomic Energy Authority, Cairo (Egypt)

1996-03-01

Zircaloy cladding tubes are not compatible with the uranium fuel pellets as they suffer from failure due to pelletclad interaction (PCI). A carbon coating, as used in the canadian CANLUB fuel elements, is thought to improve the cladding performance with respect to the PCI problem. In this paper pyrolytic carbon coating was deposited on zircaloy-4 cladding tubes by the thermal cracking of commercial butant gas at the temperature range 250-450 degree C. In order to evaluate the effect of gaseous species on the mechanical properties of the tubes tensile and microhardness testing measurements were performed on samples prepared from the coated tubes. The fractured surface of the tensile zircaloy tubes and the deposited carbon coating, both, were examined by the SEM. The results of the tensile tests of zircaloy-4 tubes indicated that the coating process has insignificant effect on the ultimate strength of the tubes tested. The values of Vickers hardness numbers were not significantly changed across the tubes thickness. The microstructure of deposited carbon, due to the cracking process, was granular in all the temperature range (250-450 degree C) studied. 9 figs., 1 tab.

Vapor-Phase Deposition and Modification of Metal-Organic Frameworks: State-of-the-Art and Future Directions.

Science.gov (United States)

Stassen, Ivo; De Vos, Dirk; Ameloot, Rob

2016-10-04

Materials processing, and thin-film deposition in particular, is decisive in the implementation of functional materials in industry and real-world applications. Vapor processing of materials plays a central role in manufacturing, especially in electronics. Metal-organic frameworks (MOFs) are a class of nanoporous crystalline materials on the brink of breakthrough in many application areas. Vapor deposition of MOF thin films will facilitate their implementation in micro- and nanofabrication research and industries. In addition, vapor-solid modification can be used for postsynthetic tailoring of MOF properties. In this context, we review the recent progress in vapor processing of MOFs, summarize the underpinning chemistry and principles, and highlight promising directions for future research. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Room-temperature plasma-enhanced chemical vapor deposition of SiOCH films using tetraethoxysilane

International Nuclear Information System (INIS)

Yamaoka, K.; Yoshizako, Y.; Kato, H.; Tsukiyama, D.; Terai, Y.; Fujiwara, Y.

2006-01-01

Carbon-doped silicon oxide (SiOCH) thin films were deposited by room-temperature plasma-enhanced chemical vapor deposition (PECVD) using tetraethoxysilane (TEOS). The deposition rate and composition of the films strongly depended on radio frequency (RF) power. The films deposited at low RF power contained more CH n groups. The SiOCH films showed high etch rate and low refractive index in proportion to the carbon composition. The deposition with low plasma density and low substrate temperature is effective for SiOCH growth by PECVD using TEOS

Durability testing of medium speed diesel engine components designed for operating on coal/water slurry fuel

Science.gov (United States)

McDowell, R. E.; Giammarise, A. W.; Johnson, R. N.

1994-01-01

Over 200 operating cylinder hours were run on critical wearing engine parts. The main components tested included cylinder liners, piston rings, and fuel injector nozzles for coal/water slurry fueled operation. The liners had no visible indication of scoring nor major wear steps found on their tungsten carbide coating. While the tungsten carbide coating on the rings showed good wear resistance, some visual evidence suggests adhesive wear mode was present. Tungsten carbide coated rings running against tungsten carbide coated liners in GE 7FDL engines exhibit wear rates which suggest an approximate 500 to 750 hour life. Injector nozzle orifice materials evaluated were diamond compacts, chemical vapor deposited diamond tubes, and thermally stabilized diamond. Based upon a total of 500 cylinder hours of engine operation (including single-cylinder combustion tests), diamond compact was determined to be the preferred orifice material.

Chemical vapor deposition of yttria stabilized zirconia in porous substrates

International Nuclear Information System (INIS)

Carolan, M.F.; Michaels, J.N.

1987-01-01

Electrochemical vapor deposition (EVD) of yttria stabilized zirconia (YSZ) is the preferred route to the production of thin films of YSZ on porous substrates. This process has been used in the construction of both fuel cells and steam electrolyzers. A critical aspect of the EVD process is an initial chemical vapor deposition phase in which the pores of a porous substrate are plugged by YSZ. In this process, water vapor and a mixture of gaseous zirconium chloride and yttrium chloride diffuse into the porous substrate from opposite sides and react to form YSZ and HCl ga. During the second stage of the process a continuous dense film of electrolyte is formed by a tarnishing-type process. Experimentally it is observed that the pores plug within a few pore diameters of the metal chloride face of the substrate. A kinetic rate expression that is first order in metal chloride but zero order in water is best able to explain this phenomenon. With this rate expression, the pores always plug near the metal chloride face. The model predicts less pore narrowing to occur as the ratio of the reaction rate to the diffusion rate of the metal chloride is increased. A kinetic rate expression that is first order in both water and metal chloride predicts that the pores plug much deeper in the substrate

Heteroepitaxial growth of 3-5 semiconductor compounds by metal-organic chemical vapor deposition for device applications

Science.gov (United States)

Collis, Ward J.; Abul-Fadl, Ali

1988-01-01

The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices.

Thermodynamic calculations for chemical vapor deposition of silicon carbide

International Nuclear Information System (INIS)

Minato, Kazuo; Fukuda, Kousaku; Ikawa, Katsuichi

1985-03-01

The composition of vapor and condensed phases at equilibrium and CVD phase diagrams were calculated for the CH 3 SiCl 3 -H 2 -Ar system using a computer code SOLGASMIX-PV, which is based on the free energy minimization method. These calculations showed that β-SiC, β-SiC+C(s), β-SiC+Si(s), β-SiC+Si(l), Si(s), Si(l), or C(s) would be deposited depending on deposition parameters. In the CH 3 SiCl 3 -Ar system, condensed phase was found to be β-SiC+C(s) or C(s). Comparing the calculated CVD phase diagrams with the experimental results from the literature, β-SiC+C(s) and β-SiC+Si(s) were deposited in the experiments at the high temperature (more than 2000K) and low temperature (less than 1700K) parts of a resion, respectively, where only β-SiC would be deposited in the calculations. These are remakable results to consider the deposition mechanism of silicon carbide. (author)

Plasma-enhanced chemical vapor deposition of graphene on copper substrates

Directory of Open Access Journals (Sweden)

Nicolas Woehrl

2014-04-01

Full Text Available A plasma enhanced vapor deposition process is used to synthesize graphene from a hydrogen/methane gas mixture on copper samples. The graphene samples were transferred onto SiO2 substrates and characterized by Raman spectroscopic mapping and atomic force microscope topographical mapping. Analysis of the Raman bands shows that the deposited graphene is clearly SLG and that the sheets are deposited on large areas of several mm2. The defect density in the graphene sheets is calculated using Raman measurements and the influence of the process pressure on the defect density is measured. Furthermore the origin of these defects is discussed with respect to the process parameters and hence the plasma environment.

Characterization of Thin Walled Mo Tubing produced by FBCVD

Energy Technology Data Exchange (ETDEWEB)

Beaux, Miles Frank [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Usov, Igor Olegovich [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

2016-01-21

The goal of this report is to delineate the results of material characterization performed on Mo tubing produced via the fluidized bed chemical vapor deposition (FBCVD) method. Scanning electron microscopy (SEM) imaging reveals that small randomly oriented grains are achieved in the Mo deposition, but do not persist throughout the entire thickness of the material. Energy dispersive spectroscopy (EDS) reveals the Mo tubes contain residual chlorine and oxygen. EDS measurements on the tube surfaces separated from glass and quartz substrates reveal substrate material adhered to this surface. X-ray diffraction (XRD) revealed the presence of carbon contaminant in the form of Mo₂C and oxygen in the form of MoO₂. Combustion infrared detection (CID) and inert gas fusion (IGF) performed at Luvak Inc. was used to quantify weight percentages of oxygen and carbon in the tubes produced. Hardness value of the FBCVD Mo was found to be comparable to low carbon arc cast molybdenum.

Electrophoretic deposition (EPD) of multi-walled carbon nano tubes (MWCNT) onto indium-tin-oxide (ITO) glass substrates

International Nuclear Information System (INIS)

Mohd Roslie Ali; Shahrul Nizam Mohd Salleh

2009-01-01

Full text: Multi-Walled Carbon Nano tubes (MWCNT) were deposited onto Indium-Tin-Oxide (ITO)-coated glass substrates by introducing the use of Electrophoretic Deposition (EPD) as the method. The Multi-Walled Carbon Nano tubes (MWCNT) were dispersed ultrasonically in ethanol and sodium hydroxide (NaOH) to form stable suspension. The addition of Sodium Hydroxide in ethanol can stabilize the suspension, which was very important step before the deposition take place. Two substrates of Indium-Tin-Oxide(ITO)-coated glass placed in parallel facing each other (conductive side) into the suspension. The deposition occurs at room temperature, which the distance fixed at 1 cm between both electrodes and the voltage level applied was fixed at 400 V, respectively. The deposition time also was fixed at 30 minutes. The deposited ITO-Glass with Multi-Walled Carbon Nano tubes (MWCNT) will be characterized using Scanning Electron Microscope (SEM), Atomic Force Microscope (AFM), and Raman Microscope. The images of SEM shows that the Multi -Walled Carbon Nano tubes (MWCNT) were distributed uniformly onto the surface of ITO-Glass. The deposited ITO-Glass with Multi-Walled Carbon Nano tubes (MWCNT) could be the potential material in various practical applications such as field emission devices, fuel cells, and super capacitors. Electrophoretic deposition (EPD) technique was found to be an efficient technique in forming well distribution of Multi-Walled Carbon Nano tubes (MWCNT) onto ITO-Glass substrates, as proved in characterization methods, in which the optimum conditions will play the major role. (author)

Catalyst-Free Vapor-Phase Method for Direct Integration of Gas Sensing Nanostructures with Polymeric Transducing Platforms

Directory of Open Access Journals (Sweden)

Stella Vallejos

2014-01-01

Full Text Available Tungsten oxide nanoneedles (NNs are grown and integrated directly with polymeric transducing platforms for gas sensors via aerosol-assisted chemical vapor deposition (AACVD method. Material analysis shows the feasibility to grow highly crystalline nanomaterials in the form of NNs with aspect ratios between 80 and 200 and with high concentration of oxygen vacancies at the surface, whereas gas testing demonstrates moderate sensing responses to hydrogen at concentrations between 10 ppm and 50 ppm, which are comparable with results for tungsten oxide NNs grown on silicon transducing platforms. This method is demonstrated to be an attractive route to fabricate next generation of gas sensors devices, provided with flexibility and functionality, with great potential in a cost effective production for large-scale applications.

Study on stability of a-SiCOF films deposited by plasma enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Ding Shijin; Zhang Qingquan; Wang Pengfei; Zhang Wei; Wang Jitao

2001-01-01

Low-dielectric-constant a-SiCOF films have been prepared from TEOS, C 4 F 8 and Ar by using plasma enhanced chemical vapor deposition method. With the aid of X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR), the chemical bonding configuration, thermal stability and resistance to water of the films are explored

Formation of carbon containing layers on tungsten test limiters

International Nuclear Information System (INIS)

Rubel, M.; Philipps, V.; Huber, A.; Tanabe, T.

1999-01-01

Tungsten test limiters of mushroom shape and a plasma facing area of approximately 100 cm 2 were exposed at the TEXTOR-94 tokamak to a number of deuterium fuelled discharges performed under various operation conditions. Two types of limiters were tested: a sole tungsten limiter and a twin limiter consisting of two halves, one made of tungsten and another of graphite. The exposed surfaces were examined with ion beam analysis methods and laser profilometry. The formation of some deposition zones was observed near the edges of the limiters. The deuterium-to-carbon concentration ratio was in the range from 0.04 to 0.11 and around 0.2 for the sole tungsten and the twin limiter, respectively. Significant amounts of the co-deposited tungsten and silicon atoms were found on the graphite part of the twin limiter indicating the formation of mixed W-C-Si compounds. (orig.)

Rapid Thermal Chemical Vapor Deposition for Dual-Gated Sub-100 nm MOSFET's

National Research Council Canada - National Science Library

Sturm, James

2001-01-01

... (such as microprocessors and memory chips) is based. This project examines the scaling of MOSFET's to very small channel dimensions using a vertical structure which is defined by Rapid Thermal Chemical Vapor Deposition...

Chemistry and melting characteristics of fireside deposits taken from boiler tubes in waste incinerators

International Nuclear Information System (INIS)

Otsuka, Nobuo

2011-01-01

Highlights: → We examine tube deposits taken from boilers of municipal solid waste incinerators. → Literature survey is done on the corrosion mechanism of tube steels. → Chemical analyses, X-ray diffraction, DSC, and corrosion test were conducted. → Melting behavior of salt constituents affected the corrosiveness of the deposits. - Abstract: Twenty-three tube deposits taken from seven heat-recovery boilers of municipal solid waste incinerators were examined by chemical analyses and X-ray diffraction. These deposits were measured by Differential Scanning Calorimeter (DSC) in N 2 to investigate their melting characteristics. Sixteen deposits were used to evaluate their corrosiveness to carbon steel by high-temperature corrosion test conducted at 400 o C for 20 h in 1500 ppm HCl - 300 ppm SO 2 - 7.5%O 2 - 7.5%CO 2 - 20%H 2 O - N 2 . Total heat of endothermic reactions of the deposits taking place between 200 and 400 o C can be related to the corrosion rate of carbon steel at 400 o C. Corrosion initiated at temperatures when the deposits started to melt, became severe when fused salt constituents increased, and alleviated when the majority of the deposits became fused. The corrosion can be interpreted as fused salt corrosion caused by chloride and sulfate salts.

Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

International Nuclear Information System (INIS)

Kagan, Harris; Gan, K.K.; Kass, Richard

2009-01-01

Diamond was studied as a possible radiation hard technology for use in future high radiation environments. With the commissioning of the LHC expected in 2009, and the LHC upgrades expected in 2013, all LHC experiments are planning for detector upgrades which require radiation hard technologies. Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle and CDF and is installed in all LHC experiments. As a result, this material is now being discussed as an alternative sensor material for tracking very close to the interaction region of the super-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications.

Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics

NARCIS (Netherlands)

Worhoff, Kerstin; Driessen, A.; Lambeck, Paul; Hilderink, L.T.H.; Linders, Petrus W.C.; Popma, T.J.A.

1999-01-01

Silicon Oxynitride layers are grown from SiH4/N2, NH3 and N2O by Plasma Enhanced Chemical Vapor Deposition. The process is optimized with respect to deposition of layers with excellent uniformity in the layer thickness, high homogeneity of the refractive index and good reproducibility of the layer

CONCENTRIC TUBE-FOULING RIG FOR INVESTIGATION OF FOULING DEPOSIT FORMATION FROM PASTEURISER OF VISCOUS FOOD LIQUID

Directory of Open Access Journals (Sweden)

N. I. KHALID

2013-02-01

Full Text Available This paper reports the work on developing concentric tube-fouling rig, a new fouling deposit monitoring device. This device can detect and quantify the level of fouling deposit formation. It can also functioning as sampler for fouling deposit study, which can be attached at any food processing equipment. The design is initiated with conceptual design. The rig is designed with inner diameter of 7 cm and with tube length of 37 cm. A spiral insert with 34.5 cm length and with 5.4 cm diameter is fitted inside the tube to ensure the fluid flows around the tube. In this work, the rig is attached to the lab-scale concentric tube-pasteurizer to test its effectiveness and to collect a fouling sample after pasteurization of pink guava puree. Temperature changes are recorded during the pasteurization and the data is used to plot the heat transfer profile. Thickness of the fouling deposit is also measured. The trends for thickness, heat resistance profile and heat transfer profile for concentric tube-fouling rig matched the trends obtained from lab-scale concentric tube-pasteurizer very well. The findings from this work have shown a good potential of this rig however there is a limitation with spiral insert, which is discussed in this paper.

Comparisons between a gas-phase model of silane chemical vapor deposition and laser-diagnostic measurements

International Nuclear Information System (INIS)

Breiland, W.G.; Coltrin, M.E.; Ho, P.

1986-01-01

Theoretical modeling and experimental measurements have been used to study gas-phase chemistry in the chemical vapor deposition (CVD) of silicon from silane. Pulsed laser Raman spectroscopy was used to obtain temperature profiles and to obtain absolute density profiles of silane during deposition at atmospheric and 6-Torr total pressures for temperatures ranging from 500 to 800 0 C. Laser-excited fluorescence was used to obtain relative density profiles of Si 2 during deposition at 740 0 C in helium with 0-12 Torr added hydrogen. These measurements are compared to predictions from the theoretical model of Coltrin, Kee, and Miller. The predictions agree qualitatively with experiment. These studies indicate that fluid mechanics and gas-phase chemical kinetics are important considerations in understanding the chemical vapor deposition process

Improvements to vapor generators

International Nuclear Information System (INIS)

Keller, Arthur; Monroe, Neil.

1976-01-01

A supporting system is proposed for vapor generators of the 'supported' type. Said supporting system is intended to compensate the disparities of thermal expansion due to the differences in the vertical dimensions of the tubes in the walls of the combustion chamber and their collectors compared to that of the balloon tanks and the connecting tube clusters of vaporization, the first one being longer than the second ones. Said system makes it possible to build said combustion chamber higher than the balloon tanks and the tube clusters of vaporization. The capacity of steam production is thus enhanced [fr

Synthesis of mullite coatings by chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Mulpuri, R.P.; Auger, M.; Sarin, V.K. [Boston Univ., MA (United States)

1996-08-01

Formation of mullite on ceramic substrates via chemical vapor deposition was investigated. Mullite is a solid solution of Al{sub 2}O{sub 3} and SiO{sub 2} with a composition of 3Al{sub 2}O{sub 3}{circ}2SiO{sub 2}. Thermodynamic calculations performed on the AlCl{sub 3}-SiCl{sub 4}-CO{sub 2}-H{sub 2} system were used to construct equilibrium CVD phase diagrams. With the aid of these diagrams and consideration of kinetic rate limiting factors, initial process parameters were determined. Through process optimization, crystalline CVD mullite coatings have been successfully grown on SiC and Si{sub 3}N{sub 4} substrates. Results from the thermodynamic analysis, process optimization, and effect of various process parameters on deposition rate and coating morphology are discussed.

Chemical Vapor Transport Deposition of Molybdenum Disulfide Layers Using H2O Vapor as the Transport Agent

Directory of Open Access Journals (Sweden)

Shichao Zhao

2018-02-01

Full Text Available Molybdenum disulfide (MoS2 layers show excellent optical and electrical properties and have many potential applications. However, the growth of high-quality MoS2 layers is a major bottleneck in the development of MoS2-based devices. In this paper, we report a chemical vapor transport deposition method to investigate the growth behavior of monolayer/multi-layer MoS2 using water (H2O as the transport agent. It was shown that the introduction of H2O vapor promoted the growth of MoS2 by increasing the nucleation density and continuous monolayer growth. Moreover, the growth mechanism is discussed.

Atmospheric pressure plasma enhanced chemical vapor deposition of zinc oxide and aluminum zinc oxide

International Nuclear Information System (INIS)

Johnson, Kyle W.; Guruvenket, Srinivasan; Sailer, Robert A.; Ahrenkiel, S. Phillip; Schulz, Douglas L.

2013-01-01

Zinc oxide (ZnO) and aluminum-doped zinc oxide (AZO) thin films were deposited via atmospheric pressure plasma enhanced chemical vapor deposition. A second-generation precursor, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)(N,N′-diethylethylenediamine) zinc, exhibited significant vapor pressure and good stability at one atmosphere where a vaporization temperature of 110 °C gave flux ∼ 7 μmol/min. Auger electron spectroscopy confirmed that addition of H 2 O to the carrier gas stream mitigated F contamination giving nearly 1:1 metal:oxide stoichiometries for both ZnO and AZO with little precursor-derived C contamination. ZnO and AZO thin film resistivities ranged from 14 to 28 Ω·cm for the former and 1.1 to 2.7 Ω·cm for the latter. - Highlights: • A second generation precursor was utilized for atmospheric pressure film growth. • Addition of water vapor to the carrier gas stream led to a marked reduction of ZnF 2 . • Carbonaceous contamination from the precursor was minimal

The chemical vapor deposition of zirconium carbide onto ceramic substrates

International Nuclear Information System (INIS)

Glass A, John Jr.; Palmisiano, Nick Jr.; Welsh R, Edward

1999-01-01

Zirconium carbide is an attractive ceramic material due to its unique properties such as high melting point, good thermal conductivity, and chemical resistance. The controlled preparation of zirconium carbide films of superstoichiometric, stoichiometric, and substoichiometric compositions has been achieved utilizing zirconium tetrachloride and methane precursor gases in an atmospheric pressure high temperature chemical vapor deposition system

Polycrystalline thin films of antimony selenide via chemical bath deposition and post deposition treatments

International Nuclear Information System (INIS)

Rodriguez-Lazcano, Y.; Pena, Yolanda; Nair, M.T.S.; Nair, P.K.

2005-01-01

We report a method for obtaining thin films of polycrystalline antimony selenide via chemical bath deposition followed by heating the thin films at 573 K in selenium vapor. The thin films deposited from chemical baths containing one or more soluble complexes of antimony, and selenosulfate initially did not show X-ray diffraction (XRD) patterns corresponding to crystalline antimony selenide. Composition of the films, studied by energy dispersive X-ray analyses indicated selenium deficiency. Heating these films in presence of selenium vapor at 573 K under nitrogen (2000 mTorr) resulted in an enrichment of Se in the films. XRD peaks of such films matched Sb 2 Se 3 . Evaluation of band gap from optical spectra of such films shows absorption due to indirect transition occurring in the range of 1-1.2 eV. The films are photosensitive, with dark conductivity of about 2 x 10 -8 (Ω cm) -1 and photoconductivity, about 10 -6 (Ω cm) -1 under tungsten halogen lamp illumination with intensity of 700 W m -2 . An estimate for the mobility life time product for the film is 4 x 10 -9 cm 2 V -1

A predictive model for the chemical vapor deposition of polysilicon in a cold wall, rapid thermal system

Energy Technology Data Exchange (ETDEWEB)

Toprac, A.J.; Trachtenberg, I.; Edgar, T.F. (Univ. of Texas, Austin, TX (United States). Dept. of Chemical Engineering)

1994-06-01

The chemical vapor deposition of polysilicon from thermally activated silane in a cold wall, single-wafer rapid thermal system was studied by experimentation at a variety of low pressure conditions, including very high temperatures. The effect of diluent gas on polysilicon deposition rates was examined using hydrogen, helium, and krypton. A mass-transfer model for the chemical vapor deposition of polysilicon in a cold wall, rapid thermal system was developed. This model was used to produce an empirical rate expression for silicon deposition from silane by regressing kinetic parameters to fit experimental data. The resulting model provided accurate predictions over widely varying conditions in the experimental data.

Fabrication of Miniature Titanium Capsule for Brachytherapy Sources Using Tungsten Inert Gas Method

International Nuclear Information System (INIS)

Naghdi, R.; Sheibani, Sh.; Tamizifar, M.

2013-01-01

The capsules containing radioactive materials as brachytherapy sources are used for implanting into some target organs for malignant disorders treatments, such as prostate, eyes, and brain cancers. The conventional method for sealing the tubes is to weld them using a laser beam which is now a part of tube melting methods (self welding). The purpose of this study was to seal miniature titanium tubes containing radioactive materials in the form of capsules. This study introduced a new method based on melting process. A piece of commercially pure titanium grade 2 in the form of disk was used for the experiment. The sample was melted at the top of the tube by a Tungsten Inert Gas welding device for a short time duration. After completion of the melting, the disk in the form of a drop was mixed with a small part of it and both were solidified and hence closed the tube. We evaluated the tubes for the metallurgical properties and seal process which took place by Tungsten Inert Gas in different zones, including the heat affected zone, fusion zone, and interface of the joint of the drop to the tube. Finally, the produced samples were tested according to the ISO2919 and ISO9978 and the results confirmed the Disk and Tungsten Inert Gas procedure.

Photocatalytic activity of tin-doped TiO{sub 2} film deposited via aerosol assisted chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Chua, Chin Sheng, E-mail: cschua@simtech.a-star.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore); Tan, Ooi Kiang; Tse, Man Siu [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Ding, Xingzhao [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore)

2013-10-01

Tin-doped TiO{sub 2} films are deposited via aerosol assisted chemical vapor deposition using a precursor mixture composing of titanium tetraisopropoxide and tetrabutyl tin. The amount of tin doping in the deposited films is controlled by the volume % concentration ratio of tetrabutyl tin over titanium tetraisopropoxide in the mixed precursor solution. X-ray diffraction analysis results reveal that the as-deposited films are composed of pure anatase TiO{sub 2} phase. Red-shift in the absorbance spectra is observed attributed to the introduction of Sn{sup 4+} band states below the conduction band of TiO{sub 2}. The effect of tin doping on the photocatalytic property of TiO{sub 2} films is studied through the degradation of stearic acid under UV light illumination. It is found that there is a 10% enhancement on the degradation rate of stearic acid for the film with 3.8% tin doping in comparison with pure TiO{sub 2} film. This improvement of photocatalytic performance with tin incorporation could be ascribed to the reduction of electron-hole recombination rate through charge separation and an increased amount of OH radicals which are crucial for the degradation of stearic acid. Further increase in tin doping results in the formation of recombination site and large anatase grains, which leads to a decrease in the degradation rate. - Highlights: ► Deposition of tin-doped TiO{sub 2} film via aerosol assisted chemical vapor deposition ► Deposited anatase films show red-shifted in UV–vis spectrum with tin-dopants. ► Photoactivity improves at low tin concentration but reduces at higher concentration. ► Improvement in photoactivity due to bandgap narrowing from Sn{sup 4+} band states ► Maximum photoactivity achieved occurs for films with 3.8% tin doping.

Scaling behavior of columnar structure during physical vapor deposition

Science.gov (United States)

Meese, W. J.; Lu, T.-M.

2018-02-01

The statistical effects of different conditions in physical vapor deposition, such as sputter deposition, have on thin film morphology has long been the subject of interest. One notable effect is that of column development due to differential chamber pressure in the well-known empirical model called the Thornton's Structure Zone Model. The model is qualitative in nature and theoretical understanding with quantitative predictions of the morphology is still lacking due, in part, to the absence of a quantitative description of the incident flux distribution on the growth front. In this work, we propose an incident Gaussian flux model developed from a series of binary hard-sphere collisions and simulate its effects using Monte Carlo methods and a solid-on-solid growth scheme. We also propose an approximate cosine-power distribution for faster Monte Carlo sampling. With this model, it is observed that higher chamber pressures widen the average deposition angle, and similarly increase the growth of column diameters (or lateral correlation length) and the column-to-column separation (film surface wavelength). We treat both the column diameter and the surface wavelength as power laws. It is seen that both the column diameter exponent and the wavelength exponent are very sensitive to changes in pressure for low pressures (0.13 Pa to 0.80 Pa); meanwhile, both exponents saturate for higher pressures (0.80 Pa to 6.7 Pa) around a value of 0.6. These predictions will serve as guides to future experiments for quantitative description of the film morphology under a wide range of vapor pressure.

Microstructural Effects and Properties of Non-line-of-Sight Coating Processing via Plasma Spray-Physical Vapor Deposition

Science.gov (United States)

Harder, Bryan J.; Zhu, Dongming; Schmitt, Michael P.; Wolfe, Douglas E.

2017-08-01

Plasma spray-physical vapor deposition (PS-PVD) is a unique processing method that bridges the gap between conventional thermal spray and vapor phase methods, and enables highly tailorable coatings composed of a variety of materials in thin, dense layers or columnar microstructures with modification of the processing conditions. The strengths of this processing technique are material and microstructural flexibility, deposition speed, and potential for non-line-of-sight (NLOS) capability by vaporization of the feedstock material. The NLOS capability of PS-PVD is investigated here using yttria-stabilized zirconia and gadolinium zirconate, which are materials of interest for turbine engine applications. PS-PVD coatings were applied to static cylindrical substrates approximately 6-19 mm in diameter to study the coating morphology as a function of angle. In addition, coatings were deposited on flat substrates under various impingement configurations. Impingement angle had significant effects on the deposition mode, and microscopy of coatings indicated that there was a shift in the deposition mode at approximately 90° from incidence on the cylindrical samples, which may indicate the onset of more turbulent flow and PVD-like growth. Coatings deposited at non-perpendicular angles exhibited a higher density and nearly a 2× improvement in erosion performance when compared to coatings deposited with the torch normal to the surface.

TEXTILE SURFACE MODIFICATION BY PYHSICAL VAPOR DEPOSITION – (REVIEW

Directory of Open Access Journals (Sweden)

YUCE Ismail

2017-05-01

Full Text Available Textile products are used in various branches of the industry from automotive to space products. Textiles produced for industrial use are generally referred to as technical textiles. Technical textiles are nowadays applied to several areas including transportation, medicine, agriculture, protection, sports, packaging, civil engineering and industry. There are rapid developments in the types of materials used in technical textiles. Therefore, modification and functionalization of textile surfaces is becoming more crucial. The improvements of the properties such as anti-bacterial properties, fire resistivity, UV radiation resistance, electrical conductivity, self cleaning, and super hydrophobic, is getting more concern with respect to developments in textile engineering. The properties of textile surfaces are closely related to the fiber structure, the differences in the polymer composition, the fiber mixture ratio, and the physical and chemical processes applied. Textile surface modifications can be examined in four groups under the name mechanical, chemical, burning and plasma. Surface modifications are made to improve the functionality of textile products. Textile surface modifications affect the properties of the products such as softness, adhesion and wettability. The purpose of this work is to reveal varieties of vapor deposition modifications to improve functionality. For this purpose, the pyhsical vapor deposition methods, their affects on textile products and their end-uses will be reviewed.

Morphology and photoresponse of crystalline antimony film grown on mica by physical vapor deposition

Directory of Open Access Journals (Sweden)

Shafa Muhammad

2016-09-01

Full Text Available Antimony is a promising material for the fabrication of photodetectors. This study deals with the growth of a photosensitive thin film by the physical vapor deposition (PVD of antimony onto mica surface in a furnace tube. The geometry of the grown structures was studied via scanning electron microscopy (SEM, X-ray diffraction (XRD, energy-dispersive X-ray spectroscopy (EDX and elemental diffraction analysis. XRD peaks of the antimony film grown on mica mostly matched with JCPDF Card. The formation of rhombohedral crystal structures in the film was further confirmed by SEM micrographs and chemical composition analysis. The Hall measurements revealed good electrical conductivity of the film with bulk carrier concentration of the order of 1022 Ω·cm-3 and mobility of 9.034 cm2/Vs. The grown film was successfully tested for radiation detection. The photoresponse of the film was evaluated using its current-voltage characteristics. These investigations revealed that the photosensitivity of the antimony film was 20 times higher than that of crystalline germanium.

Ultrahigh Responsivity and Detectivity Graphene-Perovskite Hybrid Phototransistors by Sequential Vapor Deposition

Science.gov (United States)

Chang, Po-Han; Liu, Shang-Yi; Lan, Yu-Bing; Tsai, Yi-Chen; You, Xue-Qian; Li, Chia-Shuo; Huang, Kuo-You; Chou, Ang-Sheng; Cheng, Tsung-Chin; Wang, Juen-Kai; Wu, Chih-I.

2017-04-01

In this work, graphene-methylammonium lead iodide (MAPbI3) perovskite hybrid phototransistors fabricated by sequential vapor deposition are demonstrated. Ultrahigh responsivity of 1.73 × 107 A W-1 and detectivity of 2 × 1015 Jones are achieved, with extremely high effective quantum efficiencies of about 108% in the visible range (450-700 nm). This excellent performance is attributed to the ultra-flat perovskite films grown by vapor deposition on the graphene sheets. The hybrid structure of graphene covered with uniform perovskite has high exciton separation ability under light exposure, and thus efficiently generates photocurrents. This paper presents photoluminescence (PL) images along with statistical analysis used to study the photo-induced exciton behavior. Both uniform and dramatic PL intensity quenching has been observed over entire measured regions, consistently demonstrating excellent exciton separation in the devices.

Industrialization of hot wire chemical vapor deposition for thin film applications

NARCIS (Netherlands)

Schropp, Ruud

2015-01-01

The consequences of implementing a Hot Wire Chemical Vapor Deposition (HWCVD) chamber into an existing in-line or roll-to-roll reactor are described. The hardware and operation of the HWCVD production reactor is compared to that of existing roll-to-roll reactors based on Plasma Enhanced Chemical

Evidence of thermal transport anisotropy in stable glasses of vapor deposited organic molecules

Science.gov (United States)

Ràfols-Ribé, Joan; Dettori, Riccardo; Ferrando-Villalba, Pablo; Gonzalez-Silveira, Marta; Abad, Llibertat; Lopeandía, Aitor F.; Colombo, Luciano; Rodríguez-Viejo, Javier

2018-03-01

Vapor deposited organic glasses are currently in use in many optoelectronic devices. Their operation temperature is limited by the glass transition temperature of the organic layers and thermal management strategies become increasingly important to improve the lifetime of the device. Here we report the unusual finding that molecular orientation heavily influences heat flow propagation in glassy films of small molecule organic semiconductors. The thermal conductivity of vapor deposited thin-film semiconductor glasses is anisotropic and controlled by the deposition temperature. We compare our data with extensive molecular dynamics simulations to disentangle the role of density and molecular orientation on heat propagation. Simulations do support the view that thermal transport along the backbone of the organic molecule is strongly preferred with respect to the perpendicular direction. This is due to the anisotropy of the molecular interaction strength that limits the transport of atomic vibrations. This approach could be used in future developments to implement small molecule glassy films in thermoelectric or other organic electronic devices.

Conical evaporator and liquid-return wick model for vapor anode, multi-tube AMTEC cells

Science.gov (United States)

Tournier, Jean-Michel; El-Genk, Mohamed S.

2000-01-01

A detailed, 2-D thermal-hydraulic model for conical and flat evaporators and the liquid sodium return artery in PX-type AMTEC cells was developed, which predicts incipient dryout at the evaporator wick surface. Results obtained at fixed hot and cold side temperatures showed that the flat evaporator provided a slightly lower vapor pressure, but reached the capillary limit at higher temperature. The loss of performance due to partial recondensation over up to 20% of the wick surface of the deep conical evaporators was offset by the larger surface area available for evaporation, providing a slightly higher vapor pressure. Model results matched the PX-3A cell's experimental data of electrical power output, but the predicted temperature of the cell's conical evaporator was consistently ~50 K above measurements. A preliminary analysis indicated that sodium vapor leakage in the cell (through microcracks in the BASE tubes' walls or brazes) may explain the difference between predicted and measured evaporator temperatures in PX-3A. .

SiC nanofibers grown by high power microwave plasma chemical vapor deposition

International Nuclear Information System (INIS)

Honda, Shin-ichi; Baek, Yang-Gyu; Ikuno, Takashi; Kohara, Hidekazu; Katayama, Mitsuhiro; Oura, Kenjiro; Hirao, Takashi

2003-01-01

Silicon carbide (SiC) nanofibers have been synthesized on Si substrates covered by Ni thin films using high power microwave chemical vapor deposition (CVD). Characterization using transmission electron microscopy (TEM) combined with electron energy-dispersive X-ray spectroscopy (EDX) revealed that the resultant fibrous nanostructures were assigned to β-SiC with high crystallinity. The formation of SiC nanofibers can be explained by the vapor liquid solid (VLS) mechanism in which precipitation of SiC occurs from the supersaturated Ni nanoparticle containing Si and C

Processing-structure-property relationships in electron beam physical vapor deposited yttria stabilized zirconia coatings

International Nuclear Information System (INIS)

Rao, D. Srinivasa; Valleti, Krishna; Joshi, S. V.; Janardhan, G. Ranga

2011-01-01

The physical and mechanical properties of yttria stabilized zirconia (YSZ) coatings deposited by the electron beam physical vapor deposition technique have been investigated by varying the key process variables such as vapor incidence angle and sample rotation speed. The tetragonal zirconia coatings formed under varying process conditions employed were found to have widely different surface and cross-sectional morphologies. The porosity, phase composition, planar orientation, hardness, adhesion, and surface residual stresses in the coated specimens were comprehensively evaluated to develop a correlation with the process variables. Under transverse scratch test conditions, the YSZ coatings exhibited two different crack formation modes, depending on the magnitude of residual stress. The influence of processing conditions on the coating deposition rate, column orientation angle, and adhesion strength has been established. Key relationships between porosity, hardness, and adhesion are also presented.

Fabrication of Multi-Layerd SiC Composite Tube for LWR Applications

Energy Technology Data Exchange (ETDEWEB)

Kim, Daejong; Jung, Choonghwan; Kim, Weonju; Park, Jiyeon [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Lee, Jongmin [Chungnam National Univ., Daejeon (Korea, Republic of)

2013-05-15

In this study, the chemical vapor deposition (CVD) and chemical vapor infiltration (CVI) methods were employed for the fabrication of the composite tubes. SiC ceramics and SiC-based composites have recently been studied for LWR fuel cladding applications because of good mechanical/physical properties, neutron irradiation resistance and excellent compatibility with coolant under severe accident. A multi-layered SiC composite tube as the nuclear fuel cladding is composed of the monolith SiC inner layer, SiC/SiC composite intermediate layer, and monolith SiC outer layer. Since all constituents should be highly pure, stoichiometric to achieve the good properties, it has been considered that the chemical process is a well-suited technique for the fabrication of the SiC phases.

The origin of stress in sputter-deposited tungsten films for x-ray masks

International Nuclear Information System (INIS)

Itoh, M.; Hori, M.; Nadahara, S.

1991-01-01

The mechanism for the cause of stress in a sputter-deposited tungsten (W) film has been clarified. The tensile stress of the film was calculated using the interatomic forces acting on the grain boundary. The average distance of the grain boundary gaps was determined from the measured film density assuming the film had homogeneous size rectangular grains. The calculated and measured stress values were in good agreement in the high working gas pressure region. The difference between these values in the low working gas pressure region has been able to be explained by the compressive stress due to the peening effect of Ar. The low stress in the high pressure region was obtained by large opened grain boundaries which produced low film density. A low film density causes a low x-ray stopping power. The film deposited in the low pressure region is suitable as an x-ray absorber because of its high film density

Chemical vapor deposition polymerization the growth and properties of parylene thin films

CERN Document Server

Fortin, Jeffrey B

2004-01-01

Chemical Vapor Deposition Polymerization - The Growth and Properties of Parylene Thin Films is intended to be valuable to both users and researchers of parylene thin films. It should be particularly useful for those setting up and characterizing their first research deposition system. It provides a good picture of the deposition process and equipment, as well as information on system-to-system variations that is important to consider when designing a deposition system or making modifications to an existing one. Also included are methods to characterizae a deposition system's pumping properties as well as monitor the deposition process via mass spectrometry. There are many references that will lead the reader to further information on the topic being discussed. This text should serve as a useful reference source and handbook for scientists and engineers interested in depositing high quality parylene thin films.

Depressurization and boiling of a single magmatic fluid as a mechanism for tin-tungsten deposit formation

OpenAIRE

Maximilian Korges; Philipp Weis; Volker Lüders; Oscar Laurent

2018-01-01

Tin (Sn) and tungsten (W) mineralization are commonly associated with each other in relation to highly evolved granites, but economical ore grades are restricted to rare global occurrences and mineralization styles are highly variable, indicating different mechanisms for ore formation. The Sn-W Zinnwald deposit in the Erzgebirge (Germany and the Czech Republic) in the roof zone of a Variscan Li-F granite hosts two contrasting styles of mineralization: (1) cassiterite (Sn) in greisen bodies, a...

Growth, structure, and tribological behavior of atomic layer-deposited tungsten disulphide solid lubricant coatings with applications to MEMS

International Nuclear Information System (INIS)

Scharf, T.W.; Prasad, S.V.; Dugger, M.T.; Kotula, P.G.; Goeke, R.S.; Grubbs, R.K.

2006-01-01

This paper describes the synthesis, structure, and tribological behavior of nanocomposite tungsten disulphide (WS 2 ) solid lubricant films grown by atomic layer deposition. A new catalytic route, incorporating a diethyl zinc catalyst, was established to promote the adsorption and growth of WS 2 . The films were grown down to 8 nm in thickness by sequential exposures of WF 6 and H 2 S gases in a viscous flow reactor on Si, SiO 2 , stainless steel, and polycrystalline Si and electroplated Ni microelectromechanical systems structures. Films were studied by cross-sectional transmission electron microscopy (XTEM) with Automated eXpert Spectral Image Analysis (AXSIA) software for X-ray spectral images and X-ray diffraction to determine the coating conformality and crystallinity. The coatings exhibited a hexagonal layered structure with predominant preferentially orientated (0 0 2) basal planes. Regardless of orientation to the substrate surface, these basal planes when sheared imparted low friction with a steady-state friction coefficient as low as 0.008 to 50,000 cycles in a dry nitrogen environment. The formation of smooth transfer films during wear provided low interfacial shear stresses during sliding thus achieving low friction and wear. The XTEM combined with AXSIA of the wear tracks identified this mechanism and the effects of vapor phase reaction by-product etching on insulating and native polycrystalline Si and Ni surfaces

Hydrogen permeation properties of plasma-sprayed tungsten

International Nuclear Information System (INIS)

Anderl, R.A.; Pawelko, R.J.; Hankins, M.R.; Longhurst, G.R.; Neiser, R.A.

1994-01-01

Tungsten has been proposed as a plasma-facing component material for advanced fusion facilities. This paper reports on laboratory-scale studies that were done to assess the hydrogen permeation properties of plasma-sprayed tungsten for such applications. The work entailed deuterium permeation measurements for plasma-sprayed (PS) tungsten coatings, sputter-deposited (SP) tungsten coatings, and steel substrate material using a mass-analyzed, 3 keV D + 3 ion beam with fluxes of similar 6.5x10 19 D/m 2 s. Extensive characterization analyses for the plasma-sprayed tungsten coatings were made using Auger spectrometry and scanning electron microscopy (SEM). Observed permeation rates through composite PS-tungsten/steel specimens were several orders of magnitude below the permeation levels observed for SP-tungsten/steel composite specimens and pure steel specimens. Characterization analyses indicated that the plasma-sprayed tungsten coating had a nonhomogeneous microstructure that consisted of splats with columnar solidification, partially-melted particles with grain boundaries, and void regions. Reduced permeation levels can be attributed to the complex microstructure and a substantial surface-connected porosity. ((orig.))

Hydrogen permeation properties of plasma-sprayed tungsten

Energy Technology Data Exchange (ETDEWEB)

Anderl, R.A. (Idaho National Engineering Lab., EG and G Idaho Inc., Idaho Falls, ID (United States)); Pawelko, R.J. (Idaho National Engineering Lab., EG and G Idaho Inc., Idaho Falls, ID (United States)); Hankins, M.R. (Idaho National Engineering Lab., EG and G Idaho Inc., Idaho Falls, ID (United States)); Longhurst, G.R. (Idaho National Engineering Lab., EG and G Idaho Inc., Idaho Falls, ID (United States)); Neiser, R.A. (Sandia National Laboratories, Albuquerque, NM 87185 (United States))

1994-09-01

Tungsten has been proposed as a plasma-facing component material for advanced fusion facilities. This paper reports on laboratory-scale studies that were done to assess the hydrogen permeation properties of plasma-sprayed tungsten for such applications. The work entailed deuterium permeation measurements for plasma-sprayed (PS) tungsten coatings, sputter-deposited (SP) tungsten coatings, and steel substrate material using a mass-analyzed, 3 keV D[sup +][sub 3] ion beam with fluxes of similar 6.5x10[sup 19] D/m[sup 2] s. Extensive characterization analyses for the plasma-sprayed tungsten coatings were made using Auger spectrometry and scanning electron microscopy (SEM). Observed permeation rates through composite PS-tungsten/steel specimens were several orders of magnitude below the permeation levels observed for SP-tungsten/steel composite specimens and pure steel specimens. Characterization analyses indicated that the plasma-sprayed tungsten coating had a nonhomogeneous microstructure that consisted of splats with columnar solidification, partially-melted particles with grain boundaries, and void regions. Reduced permeation levels can be attributed to the complex microstructure and a substantial surface-connected porosity. ((orig.))

Robofurnace: A semi-automated laboratory chemical vapor deposition system for high-throughput nanomaterial synthesis and process discovery

International Nuclear Information System (INIS)

Oliver, C. Ryan; Westrick, William; Koehler, Jeremy; Brieland-Shoultz, Anna; Anagnostopoulos-Politis, Ilias; Cruz-Gonzalez, Tizoc; Hart, A. John

2013-01-01

Laboratory research and development on new materials, such as nanostructured thin films, often utilizes manual equipment such as tube furnaces due to its relatively low cost and ease of setup. However, these systems can be prone to inconsistent outcomes due to variations in standard operating procedures and limitations in performance such as heating and cooling rates restrict the parameter space that can be explored. Perhaps more importantly, maximization of research throughput and the successful and efficient translation of materials processing knowledge to production-scale systems, relies on the attainment of consistent outcomes. In response to this need, we present a semi-automated lab-scale chemical vapor deposition (CVD) furnace system, called “Robofurnace.” Robofurnace is an automated CVD system built around a standard tube furnace, which automates sample insertion and removal and uses motion of the furnace to achieve rapid heating and cooling. The system has a 10-sample magazine and motorized transfer arm, which isolates the samples from the lab atmosphere and enables highly repeatable placement of the sample within the tube. The system is designed to enable continuous operation of the CVD reactor, with asynchronous loading/unloading of samples. To demonstrate its performance, Robofurnace is used to develop a rapid CVD recipe for carbon nanotube (CNT) forest growth, achieving a 10-fold improvement in CNT forest mass density compared to a benchmark recipe using a manual tube furnace. In the long run, multiple systems like Robofurnace may be linked to share data among laboratories by methods such as Twitter. Our hope is Robofurnace and like automation will enable machine learning to optimize and discover relationships in complex material synthesis processes

Robofurnace: A semi-automated laboratory chemical vapor deposition system for high-throughput nanomaterial synthesis and process discovery

Energy Technology Data Exchange (ETDEWEB)

Oliver, C. Ryan; Westrick, William; Koehler, Jeremy; Brieland-Shoultz, Anna; Anagnostopoulos-Politis, Ilias; Cruz-Gonzalez, Tizoc [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Hart, A. John, E-mail: ajhart@mit.edu [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2013-11-15

Laboratory research and development on new materials, such as nanostructured thin films, often utilizes manual equipment such as tube furnaces due to its relatively low cost and ease of setup. However, these systems can be prone to inconsistent outcomes due to variations in standard operating procedures and limitations in performance such as heating and cooling rates restrict the parameter space that can be explored. Perhaps more importantly, maximization of research throughput and the successful and efficient translation of materials processing knowledge to production-scale systems, relies on the attainment of consistent outcomes. In response to this need, we present a semi-automated lab-scale chemical vapor deposition (CVD) furnace system, called “Robofurnace.” Robofurnace is an automated CVD system built around a standard tube furnace, which automates sample insertion and removal and uses motion of the furnace to achieve rapid heating and cooling. The system has a 10-sample magazine and motorized transfer arm, which isolates the samples from the lab atmosphere and enables highly repeatable placement of the sample within the tube. The system is designed to enable continuous operation of the CVD reactor, with asynchronous loading/unloading of samples. To demonstrate its performance, Robofurnace is used to develop a rapid CVD recipe for carbon nanotube (CNT) forest growth, achieving a 10-fold improvement in CNT forest mass density compared to a benchmark recipe using a manual tube furnace. In the long run, multiple systems like Robofurnace may be linked to share data among laboratories by methods such as Twitter. Our hope is Robofurnace and like automation will enable machine learning to optimize and discover relationships in complex material synthesis processes.

Sodium vapor deposition onto a horizontal flat plate above liquid sodium surface, 2

International Nuclear Information System (INIS)

Kudo, Kazuhiko; Hirata, Masaru.

1977-01-01

The sodium vapor deposition onto a horizontal flat plate above liquid sodium surface was studied. The analysis was performed by assuming that the sodium mist is emitted into the main flow without condensation and then grows up in the main flow and drops on the sodium surface. The effects of growth of sodium mist to the system were investigated. The model of the phenomena is the sodium deposition onto a horizontal flat plate which is placed above the sodium surface with the medium cover gas. One-dimensional analysis can be done. The rate of deposition is greatly reduced when the temperature of the flat plate is lowered. For the analysis of this phenomena, it is assumed that the sodium mist grows by condensation. One of results is that the real state may be the state between the state that the condensation of mist is made in the boundary layer and the state that the mist is condensed in the main flow. Others are that there is no effect of sodium mist condensation on the rate of deposition, and that the rate of the vaporization of sodium is given by the original and the modified model. (Kato, T.)

Synthesis of Nitrogen-Doped Carbon Nano tubes Using Injection-Vertical Chemical Vapor Deposition: Effects of Synthesis Parameters on the Nitrogen Content

International Nuclear Information System (INIS)

Hachimi, A.; Hakeem, A.; Merzougui, B.; Atieh, M. A.; Merzougui, B.; Atieh, M. A.; Laoui, A.; Swain, G.M.; Chang, Q.; Shao, M.

2015-01-01

Nitrogen-doped CNTs (N-CNTs) were synthesized using an injection-vertical chemical vapor deposition (IV-CVD) reactor. This type of reactor is quite useful for the continuous mass production of CNTs. In this work, the optimum deposition conditions for maximizing the incorporation of nitrogen were identified. Ferrocene served as the source of the Fe catalyst and was dissolved in acetonitrile, which served as both the hydrocarbon and nitrogen sources. Different concentrations of ferrocene in acetonitrile were introduced into the top of a vertically aligned reactor at a constant flow rate with hydrogen serving as the carrier. The effects of hydrogen flow rate, growth temperature, and catalyst loading (Fe from the ferrocene) on the microstructure, elemental composition, and yield of N-CNTs were investigated. The N-CNTs possessed a bamboo-like microstructure with a nitrogen doping level as high as 14 at.% when using 2.5 to 5 mg/m L of the ferrocene/acetonitrile mixture at 800 degree under a 1000 sccm flow of hydrogen. A production rate of 100 mg/h was achieved under the optimized synthesis conditions.

Tritium retention properties of tungsten, graphite and co-deposited carbon film

International Nuclear Information System (INIS)

Nobuta, Y.; Hatano, Y.; Matsuyama, M.; Abe, S.; Akamaru, S.; Yamauchi, Y.; Hino, T.; Suzuki, S.; Akiba, M.

2014-01-01

DT + ion irradiation was performed on polycrystalline tungsten, graphite and carbon film and both the amount of retained tritium and the reduction of retained tritium after preservation in vacuum were investigated using an IP technique and BIXS. In addition, the relationship between the retention properties of tritium and the microstructure of graphite and carbon film were studied with Raman spectroscopy. The amount of retained tritium in tungsten was smaller than in both graphite and carbon film. After 1 keV of DT + irradiation, graphite showed no reduction of the amount of retained tritium after six months preservation while that of carbon film decreased by approximately 20% after 40 days preservation. It was suggested that this difference might be associated with differences in the microstructure between graphite and carbon film. In tungsten, the amount of retained tritium decreased to approximately half after 18 days preservation. As the incident energy of implanted tritium to tungsten increased, the decrease in tritium retention during preservation became slower. Tungsten's properties of releasing tritium while preserved in vacuum would be a useful tool for the reduction/removal of retained tritium

Modeling film uniformity and symmetry in ionized metal physical vapor deposition with cylindrical targets

International Nuclear Information System (INIS)

Lu Junqing; Yang Lin; Yoon, Jae Hong; Cho, Tong Yul; Tao Guoqing

2008-01-01

Severe asymmetry of the metal deposits on the trench sidewalls occurs near the wafer edge during low pressure ionized metal physical vapor deposition of Cu seed layer for microprocessor interconnects. To investigate this process and mitigate the asymmetry, an analytical view factor model based on the analogy between metal sputtering and diffuse thermal radiation was constructed to investigate deposition uniformity and symmetry for cylindrical target sputtering in low pressure (below 0.1 Pa) ionized Cu physical vapor deposition. The model predictions indicate that as the distance from the cylindrical target to wafer increases, the metal film thickness becomes more uniform across the wafer and the asymmetry of the metal deposits at the wafer edge increases significantly. These trends are similar to those for planar targets. To minimize the asymmetry, the height of the cylindrical target should be kept at a minimum. For cylindrical targets, the outward-facing sidewall of the trench could receive more direct Cu fluxes than the inward-facing one when the target to wafer distance is short. The predictions also indicate that increasing the diameter of the cylindrical target could significantly reduce the asymmetry in metal deposits at the wafer edge and make the film thickness more uniform across the wafer

Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization

Energy Technology Data Exchange (ETDEWEB)

Kim, Jun Beom; Kim, Soo-Hyun, E-mail: soohyun@ynu.ac.kr [School of Materials Science and Engineering, Yeungnam University, Gyeongsan-si 712-749 (Korea, Republic of); Han, Won Seok [UP Chemical 576, Chilgoedong, Pyeongtaek-si, Gyeonggi-do 459-050 (Korea, Republic of); Lee, Do-Joong [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

2016-07-15

Tungsten carbides (WC{sub x}) thin films were deposited on thermally grown SiO{sub 2} substrates by atomic layer deposition (ALD) using a fluorine- and nitrogen-free W metallorganic precursor, tungsten tris(3-hexyne) carbonyl [W(CO)(CH{sub 3}CH{sub 2}C ≡ CCH{sub 2}CH{sub 3}){sub 3}], and N{sub 2} + H{sub 2} plasma as the reactant at deposition temperatures between 150 and 350 °C. The present ALD-WC{sub x} system showed an ALD temperature window between 200 and 250 °C, where the growth rate was independent of the deposition temperature. Typical ALD characteristics, such as self-limited film growth and a linear dependency of the film grown on the number of ALD cycles, were observed, with a growth rate of 0.052 nm/cycle at a deposition temperature of 250 °C. The ALD-WC{sub x} films formed a nanocrystalline structure with grains, ∼2 nm in size, which consisted of hexagonal W{sub 2}C, WC, and nonstoichiometric cubic β-WC{sub 1−x} phase. Under typical deposition conditions at 250 °C, an ALD-WC{sub x} film with a resistivity of ∼510 μΩ cm was deposited and the resistivity of the ALD-WC{sub x} film could be reduced even further to ∼285 μΩ cm by further optimizing the reactant pulsing conditions, such as the plasma power. The step coverage of ALD-WC{sub x} film was ∼80% on very small sized and dual trenched structures (bottom width of 15 nm and aspect ratio of ∼6.3). From ultraviolet photoelectron spectroscopy, the work function of the ALD-WC{sub x} film was determined to be 4.63 eV. Finally, the ultrathin (∼5 nm) ALD-WC{sub x} film blocked the diffusion of Cu, even up to 600 °C, which makes it a promising a diffusion barrier material for Cu interconnects.

Reactive Chemical Vapor Deposition Method as New Approach for Obtaining Electroluminescent Thin Film Materials

Directory of Open Access Journals (Sweden)

Valentina V. Utochnikova

2012-01-01

Full Text Available The new reactive chemical vapor deposition (RCVD method has been proposed for thin film deposition of luminescent nonvolatile lanthanide aromatic carboxylates. This method is based on metathesis reaction between the vapors of volatile lanthanide dipivaloylmethanate (Ln(dpm3 and carboxylic acid (HCarb orH2Carb′ and was successfully used in case of HCarb. Advantages of the method were demonstrated on example of terbium benzoate (Tb(bz3 and o-phenoxybenzoate thin films, and Tb(bz3 thin films were successfully examined in the OLED with the following structure glass/ITO/PEDOT:PSS/TPD/Tb(bz3/Ca/Al. Electroluminescence spectra of Tb(bz3 showed only typical luminescent bands, originated from transitions of the terbium ion. Method peculiarities for deposition of compounds of dibasic acids H2Carb′ are established on example of terbium and europium terephtalates and europium 2,6-naphtalenedicarboxylate.

Tritium decontamination from co-deposited layer on tungsten substrate by ultra violet lamp and laser

International Nuclear Information System (INIS)

Oya, Yasuhisa; Tadokoro, Takahiro; Shu, Wataru; Hayashi, Takumi; O'hira, Shigeru; Nishi, Masataka

2001-01-01

Tritium decontamination using ultra violet (UV) lamp and laser was performed. Simulated co-deposited layer on tungsten substrate was deposited by C 2 H 2 or C 2 D 2 glow discharge. The co-deposited layer was irradiated to UV lights from a xenon excimer lamp (172 nm) or ArF excimer laser (193 nm) and the in-situ decontamination behavior was evaluated by a mass spectrometer. After the UV irradiation, the hydrogen concentration in the co-deposited layer was evaluated by elastic recoil detection analysis (ERDA) and the depth profile was analyzed by secondary ion mass spectrometry (SIMS). For the co-deposited layer formed by C 2 D 2 glow discharge, it was found that M/e 3 (HD) gas was released mainly during the UV lamp irradiation while both M/e 3 (HD) and M/e 4 (D 2 ) gases were detected during the UV laser irradiation. Though the co-deposited layer was not removed by UV lamp irradiation, almost all the co-deposited layer was removed by UV laser irradiation within 1 min. The ratio of hydrogen against carbon in the co-deposited layer was estimated to be 0.53 by ERDA and the number of photon needed for removing 1 μm thick co-deposited layer was calculated to be 3.7x10 18 cm -2 for the UV laser by SIMS measurement. It is concluded that C-H (C-D) bond on the co-deposited layer were dissociated by irradiation of UV lamp while the co-deposited layer itself was removed by the UV laser irradiation. (author)

Deposition characteristics of titanium coating deposited on SiC fiber by cold-wall chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Luo, Xian, E-mail: luo_shenfan@hotmail.com; Wu, Shuai; Yang, Yan-qing; Jin, Na; Liu, Shuai; Huang, Bin

2016-12-01

The deposition characteristics of titanium coating on SiC fiber using TiCl{sub 4}-H{sub 2}-Ar gas mixture in a cold-wall chemical vapor deposition were studied by the combination of thermodynamic analysis and experimental studies. The thermodynamic analysis of the reactions in the TiCl{sub 4}-H{sub 2}-Ar system indicates that TiCl{sub 4} transforms to titanium as the following paths: TiCl{sub 4} → TiCl{sub 3} → Ti, or TiCl{sub 4} → TiCl{sub 3} → TiCl{sub 2} → Ti. The experimental results show that typical deposited coating contains two distinct layers: a TiC reaction layer close to SiC fiber and titanium coating which has an atomic percentage of titanium more than 70% and that of carbon lower than 30%. The results illustrate that a carbon diffusion barrier coating needs to be deposited if pure titanium is to be prepared. The deposition rate increases with the increase of temperature, but higher temperature has a negative effect on the surface uniformity of titanium coating. In addition, appropriate argon gas flow rate has a positive effect on smoothing the surface morphology of the coating. - Highlights: • Both thermodynamic analysis and experimental studies were adopted in this work. • The transformation paths of TiCl{sub 4} to Ti is: TiCl{sub 4} → TiCl{sub 3} → Ti, or TiCl{sub 4} → TiCl{sub 3} → TiCl{sub 2} → Ti. • Typical deposited Ti coating on SiC fiber contained two distinct layers. • Deposition temperature is important on deposition rate and morphologies. • Appropriate argon gas flow rate has a positive effect on smoothing of the coating.

Vertically aligned carbon nanotube growth by pulsed laser deposition and thermal chemical vapor deposition methods

International Nuclear Information System (INIS)

Sohn, Jung Inn; Nam, Chunghee; Lee, Seonghoon

2002-01-01

We have grown vertically aligned carbon nanotubes on the various substrates such as a planar p-type Si(1 0 0) wafer, porous Si wafer, SiO 2 , Si 3 N 4 , Al 2 O 3 , and Cr by thermal chemical vapor deposition (CVD) at 800 deg.C, using C 2 H 2 gas as a carbon source and Fe catalyst films deposited by a pulsed laser on the substrates. The Fe films were deposited for 5 min by pulsed laser deposition (PLD). The advantage of Fe deposition by PLD over other deposition methods lies in the superior adhesion of Fe to a Si substrate due to high kinetic energies of the generated Fe species. Scanning electron microscopy (SEM) images show that vertically well-aligned carbon nanotubes are grown on Fe nanoparticles formed from the thermal annealing of the Fe film deposited by PLD on the various substrates. Atomic force microscopy (AFM) images show that the Fe film annealed at 800 deg.C is broken to Fe nanoparticles of 10-50 nm in size. We show that the appropriate density of Fe nanoparticles formed from the thermal annealing of the film deposited by PLD is crucial in growing vertically aligned carbon nanotubes. Using a PLD and a lift-off method, we developed the selective growth of carbon nanotubes on a patterned Fe-coated Si substrate

Mineralogy and Trace Element Chemistry of Ferberite/Reinite from Tungsten Deposits in Central Rwanda

Directory of Open Access Journals (Sweden)

Philippe Muchez

2013-04-01

Full Text Available Tungsten mineralization in hydrothermal quartz veins from the Nyakabingo,Gifurwe and Bugarama deposits in central Rwanda occurs as the iron-rich endmember ofthe wolframite solid solution series (ferberite and in the particular form of reinite, whichrepresents a pseudomorph of ferberite after scheelite. Primary ferberite, reinite and latesecondary ferberite are characterized by their trace element chemistry and rare earthelement patterns. The replacement of scheelite by ferberite is also documented in the traceelement composition. Primary ferberite shows high Mg, Zn, Sc, V, Nb, In and Snconcentrations, but very low Ca, Pb, Sr and Ba contents. Reinite and late secondaryferberite display an uncommon trace element composition containing high concentrationsof Ca, Pb, Sr, Ba, As and Ga, but very low levels in Sn, Zr, Hf, In, Ti, Sc, Nb, Ta, Mg andZn. Late secondary ferberite replacing primary ferberite is characterized by additionalenrichments in Bi, Pb, As and Sb. The rare earth element patterns of reinite and secondaryferberite are also similar to hydrothermal scheelite. The formation of the tungsten depositsin central Rwanda is interpreted to be epigenetic in origin, and the hydrothermalmineralizing fluids are related to the intrusion of the G4-granites.

Computer simulations for thorium doped tungsten crystals

International Nuclear Information System (INIS)

Eberhard, Bernd

2009-01-01

Tungsten has the highest melting point among all metals in the periodic table of elements. Furthermore, its equilibrium vapor pressure is by far the lowest at the temperature given. Thoria, ThO 2 , as a particle dopant, results in a high temperature creep resistant material. Moreover, thorium covered tungsten surfaces show a drastically reduced electronic work function. This results in a tremendous reduction of tip temperatures of cathodes in discharge lamps, and, therefore, in dramatically reduced tungsten vapor pressures. Thorium sublimates at temperatures below those of a typical operating cathode. For proper operation, a diffusional flow of thorium atoms towards the surface has to be maintained. This atomic flux responds very sensitively on the local microstructure, as grain boundaries as well as dislocation cores offer ''short circuit paths'' for thorium atoms. In this work, we address some open issues of thoriated tungsten. A molecular dynamics scheme (MD) is used to derive static as well as dynamic material properties which have their common origin in the atomistic behavior of tungsten and thorium atoms. The interatomic interactions between thorium and tungsten atoms are described within the embedded atom model (EAM). So far, in literature no W-Th interaction potentials on this basis are described. As there is no alloying system known between thorium and tungsten, we have determined material data for the fitting of these potentials using ab-initio methods. This is accomplished using the full potential augmented plane wave method (FLAPW), to get hypothetical, i.e. not occurring in nature, ''alloy'' data of W-Th. In order to circumvent the limitations of classical (NVE) MD schemes, we eventually couple our model systems to external heat baths or volume reservoirs (NVT, NPT). For the NPT ensemble, we implemented a generalization of the variable cell method in combination with the Langevin piston, which results in a set of Langevin equations, i.e. stochastic

Conformal coverage of poly(3,4-ethylenedioxythiophene) films with tunable nanoporosity via oxidative chemical vapor deposition

NARCIS (Netherlands)

Im, S.G.; Kusters, D.J.N.; Choi, W.; Baxamusa, S.H.; Sanden, van de M.C.M.; Gleason, K.K.

2008-01-01

Novel nanoporous poly(3,4-ethylenedioxythiophene) (PEDOT) films with basalt-like surface morphology are successfully obtained via a one-step, vapor phase process of oxidative chemical vapor deposition (oCVD) by introducing a new oxidant, CuCl2, The substrate temperature of the oCVD process is a

Study of porogen removal by atomic hydrogen generated by hot wire chemical vapor deposition for the fabrication of advanced low-k thin films

Energy Technology Data Exchange (ETDEWEB)

Godavarthi, S., E-mail: srinivas@cinvestav.mx [Program of Nanoscience and Nanotechnology, Cinvestav-IPN (Mexico); Universidad Nacional Autonoma de Mexico, Instituto de Ciencias Fisicas, Av. Universidad, Cuernavaca, Morelos (Mexico); Wang, C.; Verdonck, P. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Matsumoto, Y.; Koudriavtsev, I. [Program of Nanoscience and Nanotechnology, Cinvestav-IPN (Mexico); SEES, Electrical Engineering Department, Cinvestav-IPN (Mexico); Dutt, A. [SEES, Electrical Engineering Department, Cinvestav-IPN (Mexico); Tielens, H.; Baklanov, M.R. [imec, Kapeldreef 75, 3001 Leuven (Belgium)

2015-01-30

In order to obtain low-k dielectric films, a subtractive technique, which removes sacrificial porogens from a hydrogenated silicon oxycarbide (SiOC:H) film, has been used successfully by different groups in the past. In this paper, we report on the porogen removal from porogenated SiOC:H films, using a hot wire chemical vapor deposition (HWCVD) equipment. Molecular hydrogen is dissociated into atomic hydrogen by the hot wires and these atoms may successfully remove the hydrocarbon groups from the porogenated SiOC:H films. The temperature of the HWCVD filaments proved to be a determining factor. By Fourier transform infrared spectroscopy, X-ray reflectivity (XRR), secondary ion mass spectrometry (SIMS), ellipsometric porosimetry and capacitance-voltage analyses, it was possible to determine that for temperatures higher than 1700 °C, efficient porogen removal occurred. For temperatures higher than 1800 °C, the presence of OH groups was detected. The dielectric constant was the lowest, 2.28, for the samples processed at a filament temperature of 1800 °C, although porosity measurements showed higher porosity for the films deposited at the higher temperatures. XRR and SIMS analyses indicated densification and Tungsten (W) incorporation at the top few nanometers of the films.

Rapid and highly efficient growth of graphene on copper by chemical vapor deposition of ethanol

Energy Technology Data Exchange (ETDEWEB)

Lisi, Nicola, E-mail: nicola.lisi@enea.it [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Buonocore, Francesco; Dikonimos, Theodoros; Leoni, Enrico [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Faggio, Giuliana; Messina, Giacomo [Dipartimento di Ingegneria dell' Informazione, delle Infrastrutture e dell' Energia Sostenibile (DIIES), Università “Mediterranea” di Reggio Calabria, 89122 Reggio Calabria (Italy); Morandi, Vittorio; Ortolani, Luca [CNR-IMM Bologna, Via Gobetti 101, 40129 Bologna (Italy); Capasso, Andrea [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy)

2014-11-28

The growth of graphene by chemical vapor deposition on metal foils is a promising technique to deliver large-area films with high electron mobility. Nowadays, the chemical vapor deposition of hydrocarbons on copper is the most investigated synthesis method, although many other carbon precursors and metal substrates are used too. Among these, ethanol is a safe and inexpensive precursor that seems to offer favorable synthesis kinetics. We explored the growth of graphene on copper from ethanol, focusing on processes of short duration (up to one min). We investigated the produced films by electron microscopy, Raman and X-ray photoemission spectroscopy. A graphene film with high crystalline quality was found to cover the entire copper catalyst substrate in just 20 s, making ethanol appear as a more efficient carbon feedstock than methane and other commonly used precursors. - Highlights: • Graphene films were grown by fast chemical vapor deposition of ethanol on copper. • High-temperature/short-time growth produced highly crystalline graphene. • The copper substrate was entirely covered by a graphene film in just 20 s. • Addition of H{sub 2} had a negligible effect on the crystalline quality.

Comparative study of tantalum deposition by chemical vapor deposition and electron beam vacuum evaporation

International Nuclear Information System (INIS)

Spitz, J.; Chevallier, J.

1975-01-01

The coating by tantalum of steel parts has been carried out by the two following methods: chemical vapor deposition by hydrogen reduction of TaCl 5 (temperature=1100 deg C, pressure=200 mmHg, H 2 /TaCl 5 =10); electron beam vacuum evaporation. In this case Ta was firstly condensed by ion plating (P(Ar)=5x10 -3 up to 2x10 -2 mmHg; U(c)=3 to -4kV and J(c)=0.2 to 1mAcm -2 ) in order to ensure a good adhesion between deposit and substrate; then by vacuum condensation (substrate temperature: 300 to 650 deg C) to ensure that the coating is impervious to HCl an H 2 SO 4 acids. The advantages and inconveniences of each method are discussed [fr

The versatility of hot-filament activated chemical vapor deposition

International Nuclear Information System (INIS)

Schaefer, Lothar; Hoefer, Markus; Kroeger, Roland

2006-01-01

In the field of activated chemical vapor deposition (CVD) of polycrystalline diamond films, hot-filament activation (HF-CVD) is widely used for applications where large deposition areas are needed or three-dimensional substrates have to be coated. We have developed processes for the deposition of conductive, boron-doped diamond films as well as for tribological crystalline diamond coatings on deposition areas up to 50 cm x 100 cm. Such multi-filament processes are used to produce diamond electrodes for advanced electrochemical processes or large batches of diamond-coated tools and parts, respectively. These processes demonstrate the high degree of uniformity and reproducibility of hot-filament CVD. The usability of hot-filament CVD for diamond deposition on three-dimensional substrates is well known for CVD diamond shaft tools. We also develop interior diamond coatings for drawing dies, nozzles, and thread guides. Hot-filament CVD also enables the deposition of diamond film modifications with tailored properties. In order to adjust the surface topography to specific applications, we apply processes for smooth, fine-grained or textured diamond films for cutting tools and tribological applications. Rough diamond is employed for grinding applications. Multilayers of fine-grained and coarse-grained diamond have been developed, showing increased shock resistance due to reduced crack propagation. Hot-filament CVD is also used for in situ deposition of carbide coatings and diamond-carbide composites, and the deposition of non-diamond, silicon-based films. These coatings are suitable as diffusion barriers and are also applied for adhesion and stress engineering and for semiconductor applications, respectively

Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature

KAUST Repository

Qaisi, Ramy M.; Smith, Casey; Hussain, Muhammad Mustafa

2014-01-01

We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-κ dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature

KAUST Repository

Qaisi, Ramy M.

2014-05-15

We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-κ dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tungsten oxide coatings deposited by plasma spray using powder and solution precursor for detection of nitrogen dioxide gas

Energy Technology Data Exchange (ETDEWEB)

Zhang, Chao, E-mail: zhangc@yzu.edu.cn [College of Mechanical Engineering, Yangzhou University, Yangzhou 225127 (China); Wang, Jie [College of Mechanical Engineering, Yangzhou University, Yangzhou 225127 (China); Geng, Xin [College of Mechanical Engineering, Yangzhou University, Yangzhou 225127 (China); College of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou 225002 (China)

2016-05-25

Increasing attention has been paid on preparation methods for resistive-type gas sensors based on semiconductor metal oxides. In this work, tungsten oxide (WO{sub 3}) coatings were prepared on alumina substrates and used as gas sensitive layers. The coatings were deposited by atmospheric plasma spray using powder, solution precursor, or a combination of both. Tungsten oxide powder through a powder port and ammonium tungstate aqueous solution through a liquid port were injected into plasma stream respectively or together to deposit WO{sub 3} coatings. Phase structures in the coatings were characterized by X-ray diffraction analyzer. The field-emission scanning electron microscopy images confirmed that the coatings were in microstructure, nanostructure or micro-nanostructure. The sensing properties of the sensors based on the coatings exposed to 1 ppm nitrogen dioxide gas were characterized in a home-made instrument. Sensing properties of the coatings were compared and discussed. The influences of gas humidity and working temperature on the sensor responses were further studied. - Highlights: • Porous gas sensitive coatings were deposited by plasma spray using powder and solution precursor. • Crystallized WO{sub 3} were obtained through hybrid plasma spray plus a pre-conditioned step. • Plasma power had an important influence on coating microstructure. • The particle size of atmospheric plasma-sprayed microstructured coating was stable. • Solution precursor plasma-sprayed WO{sub 3} coatings had nanostructure and showed good responses to 1 ppm NO{sub 2}.

Cracking and delamination of vapor-deposited tantalum films

International Nuclear Information System (INIS)

Fisher, R.M.; Duan, J.Z.; Liu, J.B.

1990-01-01

This paper reports on tantalum films which begin to crack and spall during vapor deposition on glass at a thickness of 180 nm. Islands and ribbons, 10 - 30 μm in size, delaminate by crack growth along the Ta/glass interface for several μm after which the crack penetrates into the glass to a depth of 0.5 - 1 μm and complete spalling occurs. X-ray diffraction showed that about 50% of the original bct, β-tantalum, phase had transformed to the bcc α-Ta phase. When Ta was deposited on glass that was first covered with 52 nm of copper, spalling was observed to begin at a thickness of 105 nm. In this case, the film first cracks and then peels along the Cu/glass interface and curls into scrolls indicating the presence of a small stress gradient. X-ray diffraction of the as-deposited film, and electron diffraction of ion-milled flakes, showed that the Ta films deposited on Cu-coated glass almost completely transform to bcc α-Ta. The critical thickness for delamination along the Cu/glass interface is about 1/2 that for cracking in the glass substrate when an intermediate layer of Cu is not present. All of the above findings are in good agreement with previous observations on Cr films

Synthesis and electrical characterization of tungsten oxide nanowires

Institute of Scientific and Technical Information of China (English)

Huang Rui; Zhu Jing; Yu Rong

2009-01-01

Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition (CVD) method with vapour-solid (VS) mechanism. Tin powders are used to control oxygen concentration in the furnace, thereby assisting the growth of the tungsten oxide nanowires. The grown tungsten oxide nanowires are determined to be of crystalline W18O49. Ⅰ-Ⅴ curves are measured by an in situ transmission electron microscope (TEM) to investigate the electrical properties of the nanowires. All of the Ⅰ-Ⅴ curves observed are symmetric, which reveals that the tungsten oxide nanowires are semiconducting. Quantitative analyses of the experimental I V curves by using a metal-semiconductor-metal (MSM) model give some intrinsic parameters of the tungsten oxide nanowires, such as the carrier concentration, the carrier mobility and the conductivity.

Incorporation of tungsten metal fibers in a metal and ceramic matrix

Directory of Open Access Journals (Sweden)

V. Brozek

2017-01-01

Full Text Available Tungsten fibers have high tensile strength but a poor oxidation resistance at elevated temperatures. Using this first characteristic and to prevent oxidation of tungsten coated composite materials in which the primary requirement: reinforcement against destruction or deformation, was studied on tungsten fibers and tungsten wires which were coated by applying the metal and ceramic powders via plasma spraying device in plasma generator WSP®. Deposition took place in an atmosphere of Ar + 7 % H2, sufficient to reduce the oxidized trace amounts of tungsten.

Kinetic Study of the Chemical Vapor Deposition of Tantalum in Long Narrow Channels

DEFF Research Database (Denmark)

Mugabi, James Atwoki; Eriksen, Søren; Petrushina, Irina

2016-01-01

A kinetic study of the chemical vapor deposition of tantalum in long narrow channels is done to optimize the industrial process for the manufacture of tantalum coated plate heat exchangers. The developed model fits well at temperatures between 750 and 850 °C, and in the pressure range of25–990 mbar....... According to the model, the predominant tantalum growth species is TaCl3. The temperature is shown to have a pronounced effect onthe morphology and rate of deposition of the tantalum and an apparent change in deposition mechanism occurs between 850–900 °C, resulting in the deposition rate at 900 °C being...

Stress in tungsten carbide-diamond like carbon multilayer coatings

NARCIS (Netherlands)

Pujada, B.R.; Tichelaar, F.D.; Janssen, G.C.A.M.

2007-01-01

Tungsten carbide-diamond like carbon (WC-DLC) multilayer coatings have been prepared by sputter deposition from a tungsten-carbide target and periodic switching on and off of the reactive acetylene gas flow. The stress in the resulting WC-DLC multilayers has been studied by substrate curvature.

Vapor deposition of molybdenum oxide using bis(ethylbenzene) molybdenum and water

International Nuclear Information System (INIS)

Drake, Tasha L.; Stair, Peter C.

2016-01-01

Three molybdenum precursors—bis(acetylacetonate) dioxomolybdenum, molybdenum isopropoxide, and bis(ethylbenzene) molybdenum—were tested for molybdenum oxide vapor deposition. Quartz crystal microbalance studies were performed to monitor growth. Molybdenum isopropoxide and bis(ethylbenzene) molybdenum achieved linear growth rates 0.01 and 0.08 Å/cycle, respectively, using atomic layer deposition techniques. Negligible MoO_x growth was observed on alumina powder using molybdenum isopropoxide, as determined by inductively coupled plasma optical emission spectroscopy. Bis(ethylbenzene) molybdenum achieved loadings of 0.5, 1.1, and 1.9 Mo/nm"2 on alumina powder after one, two, and five cycles, respectively, using atomic layer deposition techniques. The growth window for bis(ethylbenzene) molybdenum is 135–150 °C. An alternative pulsing strategy was also developed for bis(ethylbenzene) molybdenum that results in higher growth rates in less time compared to atomic layer deposition techniques. The outlined process serves as a methodology for depositing molybdenum oxide for catalytic applications. All as-deposited materials undergo further calcination prior to characterization and testing.

Femtosecond fluorescence upconversion spectroscopy of vapor-deposited tris(8-hydroxyquinoline) aluminum films.

NARCIS (Netherlands)

Humbs, W.; Zhang, H.; Glasbeek, M.

2000-01-01

Abstract Vapor-deposited Alq3 is used as the green emitting layer in a class of organic light-emitting diodes. In this paper, the time dependence of the fluorescence from thin Alq3 films has been studied by means of the femtosecond fluorescence upconversion technique. From the temporally resolved

CVD diamond deposition onto dental burs

International Nuclear Information System (INIS)

Ali, N.; Sein, H.

2001-01-01

A hot-filament chemical vapor deposition (HFCVD) system has been modified to enable non-planar substrates, such as metallic wires and dental burs, to be uniformly coated with thin polycrystalline diamond films. Initially, diamond deposition was carried out on titanium and tantalum wires in order to test and optimize the system. High growth rates of the order of approx. 8 /hr were obtained when depositing diamond on titanium wires using the vertical filament arrangement. However, lower growth rates of the order of 4-5meu m/hr were obtained with diamond deposition on tantalum wires. To extend the work towards a practical biomedical application tungsten carbide dental burs were coated with diamond films. The as-grown films were found to be polycrystalline and uniform over the cutting tip. Finally, the costs relating to diamond CVD onto dental burs have been presented in this paper. The costs relating to coating different number of burs at a time and the effect of film thickness on costs have been included in this investigation. (author)

Hydrogen permeation properties of plasma-sprayed tungsten*1

Science.gov (United States)

Anderl, R. A.; Pawelko, R. J.; Hankins, M. R.; Longhurst, G. R.; Neiser, R. A.

1994-09-01

Tungsten has been proposed as a plasma-facing component material for advanced fusion facilities. This paper reports on laboratory-scale studies that were done to assess the hydrogen permeation properties of plasma-sprayed tungsten for such applications. The work entailed deuterium permeation measurements for plasma-sprayed (PS) tungsten coatings, sputter-deposited (SP) tungsten coatings, and steel substrate material using a mass-analyzed, 3 keV D 3+ ion beam with fluxes of ˜6.5 × 10 19 D/m 2 s. Extensive characterization analyses for the plasma-sprayed tungsten coatings were made using Auger spectrometry and scanning electron microscopy (SEM). Observed permeation rates through composite PS-tungsten/steel specimens were several orders of magnitude below the permeation levels observed for SP-tungsten/steel composite specimens and pure steel specimens. Characterization analyses indicated that the plasma-sprayed tungsten coating had a nonhomogeneous microstructure that consisted of splats with columnar solidification, partially-melted particles with grain boundaries, and void regions. Reduced permeation levels can be attributed to the complex microstructure and a substantial surface-connected porosity.

Effects of argon and oxygen flow rate on water vapor barrier properties of silicon oxide coatings deposited on polyethylene terephthalate by plasma enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Kim, Sung-Ryong; Choudhury, Moinul Haque; Kim, Won-Ho; Kim, Gon-Ho

2010-01-01

Plasma polymer coatings were deposited from hexamethyldisiloxane on polyethylene terephthalate (PET) substrates while varying the operating conditions, such as the Ar and O 2 flow rates, at a fixed radio frequency power of 300 W. The water vapor transmission rate (WVTR) of the untreated PET was 54.56 g/m 2 /day and was decreased after depositing the silicon oxide (SiO x ) coatings. The minimum WVTR, 0.47 g/m 2 /day, was observed at Ar and O 2 flow rates of 4 and 20 sccm, respectively, with a coating thickness of 415.44 nm. The intensity of the peaks for the Si-O-Si bending at 800-820 cm -1 and Si-O-Si stretching at 1000-1150 cm -1 varied depending on the Ar and O 2 flow rates. The contact angle of the SiO x coated PET increased as the Ar flow rate was increased from 2 to 8 sccm at a fixed O 2 flow rate of 20 sccm. It decreased gradually as the oxygen flow rate increased from 12 to 28 sccm at a fixed Ar carrier gas flow rate. The examination by atomic force microscopy revealed a correlation of the SiO x morphology and the water vapor barrier performance with the Ar and O 2 flow rates. The roughness of the deposited coatings increased when either the O 2 or Ar flow rate was increased.

Mechanical properties of vapor-deposited thin metallic films: a status report

International Nuclear Information System (INIS)

Adler, P.H.

1982-01-01

The mechanical properties of vapor-deposited thin metallic films are being studied in conjunction with the target fabrication group associated with the laser-fusion energy program. The purpose of the work is to gain an understanding as to which metals are structurally best suited to contain a glass microsphere filled with deuterium-tritium (D-T) gas at large internal pressures

Ultrasharp Si nanowires produced by plasma-enhanced chemical vapor deposition

Czech Academy of Sciences Publication Activity Database

Červenka, Jiří; Ledinský, Martin; Stuchlíková, The-Ha; Stuchlík, Jiří; Výborný, Zdeněk; Holovský, Jakub; Hruška, Karel; Fejfar, Antonín; Kočka, Jan

2010-01-01

Roč. 4, 1-2 (2010), s. 37-39 ISSN 1862-6254 R&D Projects: GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanowires * silicon * scanning electron microscopy * hemical vapor deposition * Raman spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.660, year: 2010 http://www3.interscience.wiley.com/ cgi -bin/fulltext/123213957/HTMLSTART

Industrial Application of Thin Films (TiAl)N Deposited on Thermo-Wells

International Nuclear Information System (INIS)

Velez, G.; Jaramillo, S.; Arango, Y. C.; Devia, D.; Quintero, J.; Devia, A.

2006-01-01

The thermo-well is formed by two layers, one layer is a ceramic and the other layer is anviloy (comprised tungsten). They are used to coat the thermocouple in the control temperature system during the Aluminum-Silicon alloy melting process. After two weeks of continuous work at 750 deg. C of temperature (the alloy temperature), a high wear in this material is observed, affecting the ceramic. (TiAl)N thin films are deposited directly on the anviloy substrates by the PAPVD (Plasma Assisted Physics Vapor Deposition) in arc pulsed technique, using a TiAl target in a mono-vaporizer system, composed by a reactor and a power controlled system. Two opposite electrodes are placed into the reactor and discharge is produced by a controlled power system. The XRD (X-ray diffraction) patterns show the presence of the (TiAl)N thin film peaks. The morphological characteristics are studied by the scanning probe microscopy (SPM)

Continuous, Highly Flexible, and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics

KAUST Repository

Gomez De Arco, Lewis; Zhang, Yi; Schlenker, Cody W.; Ryu, Koungmin; Thompson, Mark E.; Zhou, Chongwu

2010-01-01

We report the implementation of continuous, highly flexible, and transparent graphene films obtained by chemical vapor deposition (CVD) as transparent conductive electrodes (TCE) in organic photovoltaic cells. Graphene films were synthesized by CVD

Deposition of thin ultrafiltration membranes on commercial SiC microfiltration tubes

DEFF Research Database (Denmark)

Facciotti, Marco; Boffa, Vittorio; Magnacca, Giuliana

2014-01-01

Porous SiC based materials present high mechanical, chemical and thermal robustness, and thus have been largely applied to water-filtration technologies. In this study, commercial SiC microfiltration tubes with nominal pore size of 0.04 m were used as carrier for depositing thin aluminium oxide....... After 5 times coating, a 5.6 µm thick γ-Al2O3 layer was obtained. This membrane shows retention of ~75% for polyethylene glycol molecules with Mn of 8 and 35 kDa, indicating that, despite their intrinsic surface roughness, commercial SiC microfiltration tubes can be applied as carrier for thin...... ultrafiltration membranes. This work also indicates that an improvement of the commercial SiC support surface smoothness may greatly enhance permeance and selectivity of Υ-Al2O3 ultrafiltration membranes by allowing the deposition of thinner defect-free layers....

Self-enhanced plasma discharge effect in the deposition of diamond-like carbon films on the inner surface of slender tube

Energy Technology Data Exchange (ETDEWEB)

Xu, Yi [Department of 702, Beihang University, Beijing (China); Li, Liuhe, E-mail: liliuhe@buaa.edu.cn [Department of 702, Beihang University, Beijing (China); Luo, Sida [Department of 702, Beihang University, Beijing (China); International Research Institute for Multidisciplinary Science, Beihang University, Beijing (China); Lu, Qiuyuan [Dong Feng Commercial Vehicle Technical Center, Dong Feng Commercial Vehicle Co., LTD, Wuhan (China); Gu, Jiabin; Lei, Ning [Department of 702, Beihang University, Beijing (China); Huo, Chunqin [Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education, Shenzhen University, Guangdong (China)

2017-01-30

Highlights: • Effect of inner surface materials of tubes on plasma discharge is examined. • Electron mean free path is used to analyze the films deposition. • Secondary electrons emitted from inner surface of tube enhance plasma discharge. - Abstract: Enhanced glow discharge plasma immersion ion implantation and deposition (EGD-PIII&D) have been proved to be highly effective for depositing diamond-like carbon (DLC) films on the inner surface of the slender quartz tube with a deposition rate of 1.3 μm/min. Such a high-efficiency DLC films deposition was explained previously as the short electrons mean free path to cause large collision frequency between electrons and neutral particles. However, in this paper, we found that the inner surface material of the tube itself play a vital role on the films deposition. To disclose the mechanism of this phenomenon, the effect of different inner surface materials on plasma discharge was experimentally and theoretically investigated. Then a self-enhancing plasma discharge is discovered. It is found that secondary electrons emitted from the inner surface material, whatever it is the tube inner surface or deposited DLC films, can dramatically enhance the plasma discharge to improve the DLC films deposition rate.

Buoyancy-Driven Heat Transfer During Application of a Thermal Gradient for the Study of Vapor Deposition at Low Pressure Using and Ideal Gas

Science.gov (United States)

Frazier, D. O.; Hung, R. J.; Paley, M. S.; Penn, B. G.; Long, Y. T.

1996-01-01

A mathematical model has been developed to determine heat transfer during vapor deposition of source materials under a variety of orientations relative to gravitational accelerations. The model demonstrates that convection can occur at total pressures as low as 10-2 mm Hg. Through numerical computation, using physical material parameters of air, a series of time steps demonstrates the development of flow and temperature profiles during the course of vapor deposition. These computations show that in unit gravity vapor deposition occurs by transport through a fairly complicated circulating flow pattern when applying heat to the bottom of the vessel with parallel orientation with respect to the gravity vector. The model material parameters for air predict the effect of kinematic viscosity to be of the same order as thermal diffusivity, which is the case for Prandtl number approx. 1 fluids. Qualitative agreement between experiment and the model indicates that 6-(2-methyl-4-nitroanilino)-2,4-hexadiyn-l-ol (DAMNA) at these pressures indeed approximates an ideal gas at the experiment temperatures, and may validate the use of air physical constants. It is apparent that complicated nonuniform temperature distribution in the vapor could dramatically affect the homogeneity, orientation, and quality of deposited films. The experimental test i's a qualitative comparison of film thickness using ultraviolet-visible spectroscopy on films generated in appropriately oriented vapor deposition cells. In the case where heating of the reaction vessel occurs from the top, deposition of vapor does not normally occur by convection due to a stable stratified medium. When vapor deposition occurs in vessels heated at the bottom, but oriented relative to the gravity vector between these two extremes, horizontal thermal gradients induce a complex flow pattern. In the plane parallel to the tilt axis, the flow pattern is symmetrical and opposite in direction from that where the vessel is

Influence of sodium deposits in steam generator tubes on remote field eddy current signals

Energy Technology Data Exchange (ETDEWEB)

Thirunavukkarasu, S. [EMSI Section, NDE Division, Metallurgy and Materials Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, Tamil Nadu (India); Rao, B.P.C. [EMSI Section, NDE Division, Metallurgy and Materials Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, Tamil Nadu (India)], E-mail: bpcrao@igcar.gov.in; Vaidyanathan, S.; Jayakumar, T.; Raj, Baldev [EMSI Section, NDE Division, Metallurgy and Materials Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, Tamil Nadu (India)

2008-04-15

The presence of sodium deposits in defective regions of steam generator (SG) tubes of fast-breeder reactors is expected to influence the remote field eddy current (RFEC) signals. By exposing five SG tubes having uniform wall loss grooves to a sodium environment in a specially designed test vessel, changes in the shape of RFEC signals were observed and it was possible to approximate the volume of sodium deposited in defects. An invariant signal parameter was determined for quantitative characterization of defects despite the presence of sodium in the defects.

Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400 °C for through silicon via application

International Nuclear Information System (INIS)

Su, Meiying; Yu, Daquan; Liu, Yijun; Wan, Lixi; Song, Chongshen; Dai, Fengwei; Xue, Kai; Jing, Xiangmeng; Guidotti, Daniel

2014-01-01

The dielectric via liner of through silicon vias was deposited at 400 °C using a tetraethyl orthosilicate (TEOS)-based plasma enhanced chemical vapor deposition process in a via-middle integration scheme. The morphology, conformality and chemical compositions of the liner film were characterized using field emission scanning electron microscopy and Fourier Transform Infrared spectroscopy. The thermal properties and electrical performance of blanket TEOS films were investigated by high temperature film stress and mercury probe Capacitance–Voltage measurements. The TEOS SiO 2 films show good conformality, excellent densification, low thermal stress, high breakdown voltage and low current leakage. - Highlights: • Tetraethyl orthosilicate-based oxide films were deposited for packaging application. • The oxide films deposited plasma-enhanced chemical vapor deposition (PECVD) at 400 °C. • The PECVD oxide films exhibit good step coverage. • The 400 °C PECVD oxide films exhibit low thermal stress and current leakage. • The 400 °C PECVD oxide films show high breakdown voltage and acceptable permittivity

Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400 °C for through silicon via application

Energy Technology Data Exchange (ETDEWEB)

Su, Meiying, E-mail: sumeiying@ime.ac.cn [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Yu, Daquan, E-mail: yudaquan@ime.ac.cn [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Jiangsu R and D Center for Internet of Things, Wuxi 214135 (China); Liu, Yijun [Piotech Co. Ltd, Shenyang 110179 (China); Wan, Lixi [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); Song, Chongshen; Dai, Fengwei [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Xue, Kai [National Center for Advanced Packaging, Wuxi 214135 (China); Jing, Xiangmeng [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); National Center for Advanced Packaging, Wuxi 214135 (China); Guidotti, Daniel [Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China)

2014-01-01

The dielectric via liner of through silicon vias was deposited at 400 °C using a tetraethyl orthosilicate (TEOS)-based plasma enhanced chemical vapor deposition process in a via-middle integration scheme. The morphology, conformality and chemical compositions of the liner film were characterized using field emission scanning electron microscopy and Fourier Transform Infrared spectroscopy. The thermal properties and electrical performance of blanket TEOS films were investigated by high temperature film stress and mercury probe Capacitance–Voltage measurements. The TEOS SiO{sub 2} films show good conformality, excellent densification, low thermal stress, high breakdown voltage and low current leakage. - Highlights: • Tetraethyl orthosilicate-based oxide films were deposited for packaging application. • The oxide films deposited plasma-enhanced chemical vapor deposition (PECVD) at 400 °C. • The PECVD oxide films exhibit good step coverage. • The 400 °C PECVD oxide films exhibit low thermal stress and current leakage. • The 400 °C PECVD oxide films show high breakdown voltage and acceptable permittivity.

Diamond-like carbon films deposited on polycarbonates by plasma-enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Guo, C.T. [Department of Computer and Communication, Diwan College of Management, 72141 Taiwan (China)], E-mail: ctguo@dwu.edu.tw

2008-04-30

Diamond-like carbon films were coated on optical polycarbonate using plasma-enhanced chemical vapor deposition. A mixture of SiH{sub 4} and CH{sub 4}/H{sub 2} gases was utilized to reduce the internal compressive stress of the deposited films. The structure of the DLC films was characterized as a function of film thickness using Raman spectroscopy. The dependence of G peak positions and the intensity ratio of I{sub D}/I{sub G} on the DLC film thicknesses was analyzed in detail. Other studies involving atomic force microscopy, ultraviolet visible spectrometry, and three adhesion tests were conducted. Good transparency in the visible region, and good adhesion between diamond-like carbon films and polycarbonate were demonstrated. One-time recordings before and after a DLC film was coated on compact rewritable disc substrates were analyzed as a case study. The results reveal that the diamond-like carbon film overcoating the optical polycarbonates effectively protects the storage media.

Fracture and Residual Characterization of Tungsten Carbide Cobalt Coatings on High Strength Steel

National Research Council Canada - National Science Library

Parker, Donald S

2003-01-01

Tungsten carbide cobalt coatings applied via high velocity oxygen fuel thermal spray deposition are essentially anisotropic composite structures with aggregates of tungsten carbide particles bonded...

Beam tube vacuum in future superconducting proton colliders

International Nuclear Information System (INIS)

Turner, W.

1994-10-01

The beam tube vacuum requirements in future superconducting proton colliders that have been proposed or discussed in the literature -- SSC, LHC, and ELN -- are reviewed. The main beam tube vacuum problem encountered in these machines is how to deal with the magnitude of gas desorption and power deposition by synchrotron radiation while satisfying resistivity, impedance, and space constraints in the cryogenic environment of superconducting magnets. A beam tube vacuum model is developed that treats photodesorption of tightly bound H, C, and 0, photodesorption of physisorbed molecules, and the isotherm vapor pressure of H 2 . Experimental data on cold tube photodesorption experiments are reviewed and applied to model calculations of beam tube vacuum performance for simple cold beam tube and liner configurations. Particular emphasis is placed on the modeling and interpretation of beam tube photodesorpiion experiments at electron synchrotron light sources. The paper also includes discussion of the constraints imposed by beam image current heating, the growth rate of the resistive wall instability, and single-bunch instability impedance limits

Magmatic Vapor Phase Transport of Copper in Reduced Porphyry Copper-Gold Deposits: Evidence From PIXE Microanalysis of Fluid Inclusions

Science.gov (United States)

Rowins, S. M.; Yeats, C. J.; Ryan, C. G.

2002-05-01

Nondestructive proton-induced X-ray emission (PIXE) studies of magmatic fluid inclusions in granite-related Sn-W deposits [1] reveal that copper transport out of reduced felsic magmas is favored by low-salinity vapor and not co-existing high-salinity liquid (halite-saturated brine). Copper transport by magmatic vapor also has been documented in oxidized porphyry Cu-Au deposits, but the magnitude of Cu partitioning into the vapor compared to the brine generally is less pronounced than in the reduced magmatic Sn-W systems [2]. Consideration of these microanalytical data leads to the hypothesis that Cu and, by inference, Au in the recently established "reduced porphyry copper-gold" (RPCG) subclass should partition preferentially into vapor and not high-salinity liquid exsolving directly from fluid-saturated magmas [3-4]. To test this hypothesis, PIXE microanalysis of primary fluid inclusions in quartz-sulfide (pyrite, pyrrhotite & chalcopyrite) veins from two RPCG deposits was undertaken using the CSIRO-GEMOC nuclear microprobe. PIXE microanalysis for the ~30 Ma San Anton deposit (Mexico) was done on halite-saturated aqueous brine (deposit (W. Australia) was done on halite-saturated "aqueous" inclusions, which contain a small (deposits of the new RPCG subclass demonstrate the greater potential of these systems, compared to the classically oxidized porphyry Cu-Au systems, to transport Cu and probably precious metals in a magmatic aqueous vapor phase. These PIXE data also support the possibility that Cu partitions preferentially into an immiscible CO2-rich magmatic fluid. References: [1] Heinrich, C.A. et al. (1992) Econ. Geol., 87, 1566-1583. [2] Heinrich, C.A. et al. (1999) Geology, 27, 755-758. [3] Rowins, S.M. (2000) Geology, 28, 491-494. [4] Rowins, S.M. (2000) The Gangue, GAC-MDD Newsletter, 67, 1-7 (www.gac.ca). [5] Rowins, S.M. et al. (1993) Geol. Soc. Australia Abs., 34, 68-70.

Using atomic layer deposited tungsten to increase thermal conductivity of a packed bed

Energy Technology Data Exchange (ETDEWEB)

Van Norman, Staci A.; Falconer, John L.; Weimer, Alan W., E-mail: alan.weimer@colorado.edu [Department of Chemical and Biological Engineering, University of Colorado, UCB 596, Boulder, Colorado 80309-0596 (United States); Tringe, Joseph W.; Sain, John D. [Lawrence Livermore National Laboratory, 7000 East Ave, Livermore, California 94550 (United States); Yang, Ronggui [Department of Mechanical Engineering, University of Colorado, UCB 427, Boulder, Colorado 80309-0427 (United States)

2015-04-13

This study investigated the effective thermal conductivity (k{sub eff}) of packed-beds that contained porous particles with nanoscale tungsten (W) films of different thicknesses formed by atomic layer deposition (ALD). A continuous film on the particles is vital towards increasing k{sub eff} of the packed beds. For example, the k{sub eff} of an alumina packed bed was increased by three times after an ∼8-nm continuous W film with 20 cycles of W ALD, whereas k{sub eff} was decreased on a polymer packed bed with discontinuous, evenly dispersed W-islands due to nanoparticle scattering of phonons. For catalysts, understanding the thermal properties of these packed beds is essential for developing thermally conductive supports as alternatives to structured supports.

Computer simulations for thorium doped tungsten crystals

Energy Technology Data Exchange (ETDEWEB)

Eberhard, Bernd

2009-07-17

Tungsten has the highest melting point among all metals in the periodic table of elements. Furthermore, its equilibrium vapor pressure is by far the lowest at the temperature given. Thoria, ThO{sub 2}, as a particle dopant, results in a high temperature creep resistant material. Moreover, thorium covered tungsten surfaces show a drastically reduced electronic work function. This results in a tremendous reduction of tip temperatures of cathodes in discharge lamps, and, therefore, in dramatically reduced tungsten vapor pressures. Thorium sublimates at temperatures below those of a typical operating cathode. For proper operation, a diffusional flow of thorium atoms towards the surface has to be maintained. This atomic flux responds very sensitively on the local microstructure, as grain boundaries as well as dislocation cores offer ''short circuit paths'' for thorium atoms. In this work, we address some open issues of thoriated tungsten. A molecular dynamics scheme (MD) is used to derive static as well as dynamic material properties which have their common origin in the atomistic behavior of tungsten and thorium atoms. The interatomic interactions between thorium and tungsten atoms are described within the embedded atom model (EAM). So far, in literature no W-Th interaction potentials on this basis are described. As there is no alloying system known between thorium and tungsten, we have determined material data for the fitting of these potentials using ab-initio methods. This is accomplished using the full potential augmented plane wave method (FLAPW), to get hypothetical, i.e. not occurring in nature, ''alloy'' data of W-Th. In order to circumvent the limitations of classical (NVE) MD schemes, we eventually couple our model systems to external heat baths or volume reservoirs (NVT, NPT). For the NPT ensemble, we implemented a generalization of the variable cell method in combination with the Langevin piston, which results in a

Dynamic scaling and kinetic roughening of poly(ethylene) islands grown by vapor phase deposition

Czech Academy of Sciences Publication Activity Database

Choukourov, A.; Melnichuk, I.; Gordeev, I.; Kylián, O.; Hanuš, J.; Kousal, J.; Solař, P.; Hanyková, L.; Brus, Jiří; Slavínská, D.; Biederman, H.

2014-01-01

Roč. 565, 28 August (2014), s. 249-260 ISSN 0040-6090 Institutional support: RVO:61389013 Keywords : poly(ethylene) * physical vapor deposition * island growth Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.759, year: 2014

New luminescence lines in nanodiamonds obtained by chemical vapor deposition

Science.gov (United States)

Golubev, V. G.; Grudinkin, S. A.; Davydov, V. Yu.; Smirnov, A. N.; Feoktistov, N. A.

2017-12-01

The spectral characteristics of the photoluminescence lines detected for nanodiamonds obtained by the reactive ion etching of diamond particles in oxygen plasma, deposited by chemical vapor deposition on a silicon substrate, are studied. At room temperature, narrow lines are observed in the visible and infrared spectral regions, with a full width at half-maximum in the range of 1-2 nm at an almost complete absence of a broadband photoluminescence background signal. At decreasing temperature, the lines narrowed to 0.2-0.6 nm at T = 79 K, and the minimum line width was 0.055 nm at T = 10 K. With increasing temperature, the narrow lines shifted to the long-wavelength region of the spectrum, and their intensity decreased.

Single-crystalline AlN growth on sapphire using physical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Cardenas-Valencia, Andres M., E-mail: andres.cardenas@sri.co [SRI International (United States); Onishi, Shinzo; Rossie, Benjamin [SRI International (United States)

2011-02-07

A novel technique for growing single crystalline aluminum nitride (AlN) films is presented. The novelty of the technique, specifically, comes from the use of an innovative physical vapor deposition magnetron sputtering tool, which embeds magnets into the target material. A relatively high deposition rates is achieved ({approx}0.2 {mu}m/min), at temperatures between 860 and 940 {sup o}C. The AlN, grown onto sapphire, is single-crystalline as evidenced by observation using transmission electron microscopy. Tool configuration and growth conditions are discussed, as well as a first set of other analytical results, namely, x-ray diffraction and ultraviolet-visible transmission spectrophotometry.

The transient creep of vapor deposited Ti-6Al-4V

International Nuclear Information System (INIS)

Warren, J.; Wadley, H.N.G.

1996-01-01

Titanium matrix composites can be synthesized by the consolidation of ceramic fibers (for example, alumina and silicon carbide monofilaments) coated with titanium alloy deposited on the fiber by physical vapor deposition (PVD). Consolidation involves deformation of the matrix coating by both transient and steady-state creep. In a recent paper the mechanisms responsible for steady-state creep in PVD Ti-6Al-4V, between 600 and 900 C, were determined. The analysis of the data first presented has been extended here to consider the transient creep behavior of the material and identify an analogous constitutive law for use in simulating the transient creep contribution to consolidation

Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials

Science.gov (United States)

Hepp, Aloysius F.; Banger, Kulbinder K.; Jin, Michael H.-C.; Harris, Jerry D.; McNatt, Jeremiah S.; Dickman, John E.

2008-01-01

Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure in a horizontal hotwall reactor at 395 C yielded the best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier-, smoother-, and denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was one percent.

Direct dry transfer of chemical vapor deposition graphene to polymeric substrates

OpenAIRE

Fechine, Guilhermino J. M.; Martin-Fernandez, Inigo; Yiapanis, George; de Oliveira, Ricardo V. Bof; Hu, Xiao; Yarovsky, Irene; Neto, Antonio H. Castro; Ozyilmaz, Barbaros

2014-01-01

We demonstrate the direct dry transfer of large area Chemical Vapor Deposition graphene to several polymers (low density polyethylene, high density polyethylene, polystyrene, polylactide acid and poly(vinylidenefluoride-co-trifluoroethylene) by means of only moderate heat and pressure, and the later mechanical peeling of the original graphene substrate. Simulations of the graphene-polymer interactions, rheological tests and graphene transfer at various experimental conditions show that contro...

Tribology of carbide derived carbon films synthesized on tungsten carbide

Science.gov (United States)

Tlustochowicz, Marcin

Tribologically advantageous films of carbide derived carbon (CDC) have been successfully synthesized on binderless tungsten carbide manufactured using the plasma pressure compaction (P2CRTM) technology. In order to produce the CDC films, tungsten carbide samples were reacted with chlorine containing gas mixtures at temperatures ranging from 800°C to 1000°C in a sealed tube furnace. Some of the treated samples were later dechlorinated by an 800°C hydrogenation treatment. Detailed mechanical and structural characterizations of the CDC films and sliding contact surfaces were done using a series of analytical techniques and their results were correlated with the friction and wear behavior of the CDC films in various tribosystems, including CDC-steel, CDC-WC, CDC-Si3N4 and CDC-CDC. Optimum synthesis and treatment conditions were determined for use in two specific environments: moderately humid air and dry nitrogen. It was found that CDC films first synthesized at 1000°C and then hydrogen post-treated at 800°C performed best in air with friction coefficient values as low as 0.11. However, for dry nitrogen applications, no dechlorination was necessary and both hydrogenated and as-synthesized CDC films exhibited friction coefficients of approximately 0.03. A model of tribological behavior of CDC has been proposed that takes into consideration the tribo-oxidation of counterface material, the capillary forces from adsorbed water vapor, the carbon-based tribofilm formation, and the lubrication effect of both chlorine and hydrogen.

Q-switched all-fiber laser with short pulse duration based on tungsten diselenide

Science.gov (United States)

Li, Wenyi; OuYang, Yuyi; Ma, Guoli; Liu, Mengli; Liu, Wenjun

2018-05-01

Fiber lasers are widely used in industrial processing, sensing, medical and communications applications due to their simple structure, good stability and low cost. With the rapid development of fiber lasers and the sustained improvement of industrial laser quality requirements, researchers in ultrafast optics focus on how to get laser pulses with high output power and narrow pulse duration. Q-switched technology is one of the most effective techniques to generate ultrashort pulses. In this paper, a tungsten diselenide saturable absorber with 16.82% modulation depth is prepared by chemical vapor deposition. Experimental results show that when the pump power changes from 115.7 mW to 630 mW, the all-fiber laser can achieve a stable Q-switched pulse output. The repetition rate of the output pulse varies from 80.32 kHz to 204.2 kHz, the pulse duration is 581 ns, the maximum output power is 17.1 mW and the maximum pulse energy is 83.7 nJ. Results in this paper show that tungsten diselenide can be applied to ultrafast optics, which is a kind of saturable absorption material with excellent properties.

Characterization of ITER tungsten qualification mock-ups exposed to high cyclic thermal loads

Energy Technology Data Exchange (ETDEWEB)

Pintsuk, Gerald, E-mail: g.pintsuk@fz-juelich.de [Forschungszentrum Jülich GmbH, D-52425 Jülich (Germany); Bednarek, Maja; Gavila, Pierre [Fusion for Energy, E-08019 Barcelona (Spain); Gerzoskovitz, Stefan [Plansee SE, Innovation Services, 6600 Reutte (Austria); Linke, Jochen [Forschungszentrum Jülich GmbH, D-52425 Jülich (Germany); Lorenzetto, Patrick; Riccardi, Bruno [Fusion for Energy, E-08019 Barcelona (Spain); Escourbiac, Frederic [ITER Organization, Route de Vinon sur Verdon, CS 90 046, 13067 Saint Paul lez Durance (France)

2015-10-15

Highlights: • Mechanical deformation of CuCrZr in case a thermal barrier layer has been formed due to impurity content in the cooling water. • Crack formation at the W/Cu interface starting at the block edge. • Porosity formation in the pure Cu interlayer. • Microstructural changes in tungsten down to the W/Cu interface, which indicates also high temperatures for the pure Cu interlayer. • Macrocrack formation in tungsten which is assumed to be ductile at the initiation point and brittle when proceeding toward the cooling tube. - Abstract: High heat flux tested small-scale tungsten monoblock mock-ups (5000 cycles at 10 MW/m{sup 2} and up to 1000 cycles at 20 MW/m{sup 2}) manufactured by Plansee and Ansaldo were characterized by metallographic means. Therein, the macrocrack formation and propagation in tungsten, its recrystallization behavior and the surface response to different heat load facilities were investigated. Furthermore, debonding at the W/Cu interface, void formation in the soft copper interlayer and microcrack formation at the inner surface of the CuCrZr cooling tube were found.

Large area synthesis, characterization, and anisotropic etching of two dimensional tungsten disulfide films

International Nuclear Information System (INIS)

Mutlu, Zafer; Ozkan, Mihrimah; Ozkan, Cengiz S.

2016-01-01

Emergent properties of tungsten disulfide at the quantum confinement limit hold promise for electronic and optoelectronic applications. Here we report on the large area synthesis of atomically thin tungsten disulfide films with strong photoluminescence properties via sulfurization of the pre-deposited tungsten films. Detailed characterization of the pre-deposited tungsten films and tungsten disulfide films are performed using microscopy and spectroscopy methods. By directly heating tungsten disulfide films in air, we have shown that the films tend to be etched into a series of triangular shaped pits with the same orientations, revealing the anisotropic etching behavior of tungsten disulfide edges. Moreover, the dimensions of the triangular pits increase with the number of layers, suggesting a thickness dependent behavior of etching in tungsten disulfide films. This method offers a promising new avenue for engineering the edge structures of tungsten disulfide films. - Highlights: • Large-scale synthesis of WS_2 films is achieved via sulfurization of W films. • Annealing of W films leads to a substantial improvement in the quality of WS_2 films. • WS_2 films show laser power dependent photoluminescence characteristics. • WS_2 films are etched with well-oriented triangular pits upon annealing in air. • Anisotropic oxidative etching is greatly affected by the thickness of WS_2 films.

Synthesis of electro-active manganese oxide thin films by plasma enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Merritt, Anna R. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States); Rajagopalan, Ramakrishnan [Department of Engineering, The Pennsylvania State University, Dubois, PA 15801 (United States); Materials Research Institute, The Pennsylvania State University, University Park, PA 16802 (United States); Carter, Joshua D. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States)

2014-04-01

The good stability, cyclability and high specific capacitance of manganese oxide (MnO{sub x}) has recently promoted a growing interest in utilizing MnO{sub x} in asymmetric supercapacitor electrodes. Several literature reports have indicated that thin film geometries of MnO{sub x} provide specific capacitances that are much higher than bulk MnO{sub x} powders. Plasma enhanced chemical vapor deposition (PECVD) is a versatile technique for the production of metal oxide thin films with high purity and controllable thickness. In this work, MnO{sub x} thin films deposited by PECVD from a methylcyclopentadienyl manganese tricarbonyl precursor are presented and the effect of processing conditions on the quality of MnO{sub x} films is described. The film purity and oxidation state of the MnO{sub x} films were studied by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Preliminary electrochemical testing of MnO{sub x} films deposited on carbon fiber electrodes in aqueous electrolytes indicates that the PECVD synthesized films are electrochemically active. - Highlights: • Plasma enhanced chemical vapor deposition of manganese oxide thin films. • Higher plasma power and chamber pressure increase deposition rate. • Manganese oxide thin films are electrochemically active. • Best electrochemical performance observed for pure film with low stress • Lower capacitance observed at higher scan rates despite thin film geometry.

Cu-Al alloy formation by thermal annealing of Cu/Al multilayer films deposited by cyclic metal organic chemical vapor deposition

Science.gov (United States)

Moon, Hock Key; Yoon, Jaehong; Kim, Hyungjun; Lee, Nae-Eung

2013-05-01

One of the most important issues in future Cu-based interconnects is to suppress the resistivity increase in the Cu interconnect line while decreasing the line width below 30 nm. For the purpose of mitigating the resistivity increase in the nanoscale Cu line, alloying Cu with traces of other elements is investigated. The formation of a Cu alloy layer using chemical vapor deposition or electroplating has been rarely studied because of the difficulty in forming Cu alloys with elements such as Al. In this work, Cu-Al alloy films were successfully formed after thermal annealing of Cu/Al multilayers deposited by cyclic metal-organic chemical vapor deposition (C-MOCVD). After the C-MOCVD of Cu/Al multilayers without gas phase reaction between the Cu and Al precursors in the reactor, thermal annealing was used to form Cu-Al alloy films with a small Al content fraction. The resistivity of the alloy films was dependent on the Al precursor delivery time and was lower than that of the aluminum-free Cu film. No presence of intermetallic compounds were detected in the alloy films by X-ray diffraction measurements and transmission electron spectroscopy.

Kinetics of chemical vapor deposition of boron on molybdenum

International Nuclear Information System (INIS)

Tanaka, H.; Nakanishi, N.; Kato, E.

1987-01-01

Experimental rate data of chemical vapor deposition of boron by reduction of boron trichloride with hydrogen are analyzed to determine the reaction mechanism. The experiments were conducted at atmospheric pressure. The weight change of the sample was noted by means of a thermobalance. Molybdenum was used as the substrate. It has been found that the outer layer of the deposited film is Mo/sub 2/B/sub 5/ and the inner layer is MoB, and in the stational state of the reaction, the diffusion in the solid state is considered not to be rate controlling. When mass transport limitation was absent, the reaction orders with respect to boron trichloride and hydrogen were one third and one half, respectively. By comparing these orders with those obtained from Langmuir-Hinshelwood type equations, the rate controlling mechanism is identified to be the desorption of hydrogen chloride from the substrate

Tungsten migration studies by controlled injection of volatile compounds

Energy Technology Data Exchange (ETDEWEB)

Rubel, M., E-mail: rubel@kth.se [Royal Institute of Technology (KTH), Association EURATOM-VR, Stockholm (Sweden); Coenen, J. [IEK-4, Plasma Physics, Forschungszentrum Jülich, Association EURATOM-FZJ, Jülich (Germany); Ivanova, D. [Royal Institute of Technology (KTH), Association EURATOM-VR, Stockholm (Sweden); Möller, S. [IEK-4, Plasma Physics, Forschungszentrum Jülich, Association EURATOM-FZJ, Jülich (Germany); Petersson, P. [Royal Institute of Technology (KTH), Association EURATOM-VR, Stockholm (Sweden); Brezinsek, S.; Kreter, A.; Philipps, V.; Pospieszczyk, A.; Schweer, B. [IEK-4, Plasma Physics, Forschungszentrum Jülich, Association EURATOM-FZJ, Jülich (Germany)

2013-07-15

Volatile tungsten hexa-fluoride was locally injected into the TEXTOR tokamak as a marker for material migration studies. The injection was accompanied by puffing N-15 rare isotope as a nitrogen tracer in discharges with edge cooling by impurity seeding. The objective was to assess material balance by qualitative and quantitative determination of a global and local deposition pattern, material mixing effects and fluorine residence in plasma-facing components. Spectroscopy and ex situ ion beam analysis techniques were used. Tungsten was detected on all types of limiter tiles and short-term probes retrieved from the vessel. Over 80% of the injected W was identified. The largest tungsten concentration, 1 × 10{sup 18} cm{sup −2}, was in the vicinity of the gas inlet. Co-deposits contained tungsten and a mix of light isotopes: H, D, He-4, B-10, B-11, C-12, C-13, N-14, N-15, O-16 and small quantities of F-19 thus showing that both He and nitrogen are trapped following wall conditioning (He glow) and edge cooling.

Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

NARCIS (Netherlands)

Ponomarev, M.; Verheijen, M.A.; Keuning, W.; Sanden, van de M.C.M.; Creatore, M.

2012-01-01

Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO:Al layers by focusing on the control

A simple method to deposit palladium doped SnO2 thin films using plasma enhanced chemical vapor deposition technique

International Nuclear Information System (INIS)

Kim, Young Soon; Wahab, Rizwan; Shin, Hyung-Shik; Ansari, S. G.; Ansari, Z. A.

2010-01-01

This work presents a simple method to deposit palladium doped tin oxide (SnO 2 ) thin films using modified plasma enhanced chemical vapor deposition as a function of deposition temperature at a radio frequency plasma power of 150 W. Stannic chloride (SnCl 4 ) was used as precursor and oxygen (O 2 , 100 SCCM) (SCCM denotes cubic centimeter per minute at STP) as reactant gas. Palladium hexafluroacetyleacetonate (Pd(C 5 HF 6 O 2 ) 2 ) was used as a precursor for palladium. Fine granular morphology was observed with tetragonal rutile structure. A peak related to Pd 2 Sn is observed, whose intensity increases slightly with deposition temperature. Electrical resistivity value decreased from 8.6 to 0.9 mΩ cm as a function of deposition temperature from 400 to 600 deg. C. Photoelectron peaks related to Sn 3d, Sn 3p3, Sn 4d, O 1s, and C 1s were detected with varying intensities as a function of deposition temperature.

Preparation and structure of porous dielectrics by plasma enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Gates, S. M.; Neumayer, D. A.; Sherwood, M. H.; Grill, A.; Wang, X.; Sankarapandian, M.

2007-01-01

The preparation of ultralow dielectric constant porous silicon, carbon, oxygen, hydrogen alloy dielectrics, called 'pSiCOH', using a production 200 mm plasma enhanced chemical vapor deposition tool and a thermal treatment is reported here. The effect of deposition temperature on the pSiCOH film is examined using Fourier transform infrared (FTIR) spectroscopy, dielectric constant (k), and film shrinkage measurements. For all deposition temperatures, carbon in the final porous film is shown to be predominantly Si-CH 3 species, and lower k is shown to correlate with increased concentration of Si-CH 3 . NMR and FTIR spectroscopies clearly detect the loss of a removable, unstable, hydrocarbon (CH x ) phase during the thermal treatment. Also detected are increased cross-linking of the Si-O skeleton, and concentration changes for three distinct structures of carbon. In the as deposited films, deposition temperature also affects the hydrocarbon (CH x ) content and the presence of C=O and C=C functional groups

Application of tungsten-fibre-reinforced copper matrix composites to a high-heat-flux component: A design study by dual scale finite element analysis

International Nuclear Information System (INIS)

Jeong-Ha You

2006-01-01

According to the European Power Plant Conceptual Study, actively cooled tungsten mono-block is one of the divertor design options for fusion reactors. In this study the coolant tube acts as a heat sink and the tungsten block as plasma-facing armour. A key material issue here is how to achieve high temperature strength and high heat conductivity of the heat sink tube simultaneously. Copper matrix composite reinforced with continuous strong fibres has been considered as a candidate material for heat sink of high-heat-flux components. Refractory tungsten wire is a promising reinforcement material due to its high strength, winding flexibility and good interfacial wetting with copper. We studied the applicability of tungsten-fibre-reinforced copper matrix composite heat sink tubes for the tungsten mono-block divertor by means of dual-scale finite element analysis. Thermo-elasto-plastic micro-mechanics homogenisation technique was applied. A heat flux of 15 MW/m 2 with cooling water temperature of 320 o C was considered. Effective stress-free temperature was assumed to be 500 o C. Between the tungsten block and the composite heat sink tube interlayer (1 mm thick) of soft Cu was inserted. The finite element analysis yields the following results: The predicted maximum temperature at steady state is 1223 o C at the surface and 562 o C at the interface between tube and copper layer. On the macroscopic scale, residual stress is generated during fabrication due to differences in thermal expansion coefficients of the materials. Strong compressive stress occurs in the tungsten block around the tube while weak tensile stress is present in the interlayer. The local and global probability of brittle failure of the tungsten block was also estimated using the probabilistic failure theories. The thermal stresses are significantly decreased upon subsequent heat flux loading. Resolving the composite stress on microscopic scale yields a maximum fibre axial stress of 3000 MPa after

The electrodeposition of niobium on tungsten

International Nuclear Information System (INIS)

Taylor, R.G.

1977-03-01

The electrodeposition of niobium on a tungsten substrate has been demonstrated by electrolysis of an alkali metal fluoride melt. The deposit produced was non-porous, coherent and formed a good bond to the substrate. (author)

Initiated chemical vapor deposition of pH responsive poly(2-diisopropylamino)ethyl methacrylate thin films

Energy Technology Data Exchange (ETDEWEB)

Karaman, Mustafa, E-mail: karamanm@selcuk.edu.tr [Department of Chemical Engineering, Selcuk University (Turkey); Advanced Technology Research and Application Center, Selcuk University (Turkey); Cabuk, Nihat [Department of Chemical Engineering, Selcuk University (Turkey)

2012-08-31

Poly(2-(diisopropylamino)ethyl methacrylate) (PDPAEMA) thin films were deposited on low temperature substrates by initiated chemical vapor deposition (iCVD) method using tertbutyl peroxide as an initiator. Very high deposition rates up to 38 nm/min were observed at low filament temperatures due to the use of the initiator. Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy show the formation of PDPAEMA films with high retention of tertiary amine functionality which is responsible for pH induced changes in the wetting behavior of the surfaces. As-deposited PDPAEMA thin films on flat Si surface showed a reversible switching of water contact angle values between 87 Degree-Sign and 28 Degree-Sign ; after successive treatments of high and low pH water solutions, respectively. Conformal and non-damaging nature of iCVD allowed to functionalize fragile and rough electrospun poly(methyl methacrylate) fiber mat surfaces by PDPAEMA, which creates a surface with a switching behavior between superhydrophobic and approaching superhydrophilic with contact angle values of 155 {+-} 3 Degree-Sign and 22 {+-} 5 Degree-Sign , respectively. - Highlights: Black-Right-Pointing-Pointer Poly(2-diisopropylaminoethyl methacrylate) thin films were deposited by a dry process. Black-Right-Pointing-Pointer Initiated chemical vapor deposition can produce thin films on fragile substrates. Black-Right-Pointing-Pointer We report a reversible pH-induced transition from hydrophilic to super-hydrophobic.

Two dimensional radial gas flows in atmospheric pressure plasma-enhanced chemical vapor deposition

Science.gov (United States)

Kim, Gwihyun; Park, Seran; Shin, Hyunsu; Song, Seungho; Oh, Hoon-Jung; Ko, Dae Hong; Choi, Jung-Il; Baik, Seung Jae

2017-12-01

Atmospheric pressure (AP) operation of plasma-enhanced chemical vapor deposition (PECVD) is one of promising concepts for high quality and low cost processing. Atmospheric plasma discharge requires narrow gap configuration, which causes an inherent feature of AP PECVD. Two dimensional radial gas flows in AP PECVD induces radial variation of mass-transport and that of substrate temperature. The opposite trend of these variations would be the key consideration in the development of uniform deposition process. Another inherent feature of AP PECVD is confined plasma discharge, from which volume power density concept is derived as a key parameter for the control of deposition rate. We investigated deposition rate as a function of volume power density, gas flux, source gas partial pressure, hydrogen partial pressure, plasma source frequency, and substrate temperature; and derived a design guideline of deposition tool and process development in terms of deposition rate and uniformity.

Effect of superficial velocity on vaporization pressure drop with propane in horizontal circular tube

Science.gov (United States)

Novianto, S.; Pamitran, A. S.; Nasruddin, Alhamid, M. I.

2016-06-01

Due to its friendly effect on the environment, natural refrigerants could be the best alternative refrigerant to replace conventional refrigerants. The present study was devoted to the effect of superficial velocity on vaporization pressure drop with propane in a horizontal circular tube with an inner diameter of 7.6 mm. The experiments were conditioned with 4 to 10 °C for saturation temperature, 9 to 20 kW/m2 for heat flux, and 250 to 380 kg/m2s for mass flux. It is shown here that increased heat flux may result in increasing vapor superficial velocity, and then increasing pressure drop. The present experimental results were evaluated with some existing correlations of pressure drop. The best prediction was evaluated by Lockhart-Martinelli (1949) with MARD 25.7%. In order to observe the experimental flow pattern, the present results were also mapped on the Wang flow pattern map.

Layer-dependent supercapacitance of graphene films grown by chemical vapor deposition on nickel foam

KAUST Repository

Chen, Wei; Fan, Zhongli; Zeng, Gaofeng; Lai, Zhiping

2013-01-01

High-quality, large-area graphene films with few layers are synthesized on commercial nickel foams under optimal chemical vapor deposition conditions. The number of graphene layers is adjusted by varying the rate of the cooling process. It is found

In situ thermal imaging and three-dimensional finite element modeling of tungsten carbide-cobalt during laser deposition

International Nuclear Information System (INIS)

Xiong Yuhong; Hofmeister, William H.; Cheng Zhao; Smugeresky, John E.; Lavernia, Enrique J.; Schoenung, Julie M.

2009-01-01

Laser deposition is being used for the fabrication of net shapes from a broad range of materials, including tungsten carbide-cobalt (WC-Co) cermets (composites composed of a metallic phase and a hard refractory phase). During deposition, an unusual thermal condition is created for cermets, resulting in rather complex microstructures. To provide a fundamental insight into the evolution of such microstructures, we studied the thermal behavior of WC-Co cermets during laser deposition involving complementary results from in situ high-speed thermal imaging and three-dimensional finite element modeling. The former allowed for the characterization of temperature gradients and cooling rates in the vicinity of the molten pool, whereas the latter allowed for simulation of the entire sample. By combining the two methods, a more robust analysis of the thermal behavior was achieved. The model and the imaging results correlate well with each other and with the alternating sublayers observed in the microstructure.

Characteristics of tungsten oxide thin films prepared on the flexible substrates using pulsed laser deposition

International Nuclear Information System (INIS)

Suda, Yoshiaki; Kawasaki, Hiroharu; Ohshima, Tamiko; Yagyuu, Yoshihito

2008-01-01

Tungsten trioxide (WO 3 ) thin films have been prepared on the flexible indium tin oxide (ITO) substrates by pulsed laser deposition (PLD) using WO 3 targets in oxygen gas. Color of the WO 3 film on the flexible ITO substrates depends on the oxygen gas mixture. The plasma plume produced by PLD using a Nd:YAG laser and WO 3 target is investigated by temporal and spatial-resolved optical emission spectroscopy. WO 3 films prepared on the flexible ITO substrates show electrochromic properties, even when the substrates are bent. The film color changes from blue to transparent within 10-20 s after the applied DC voltage is turned off

Deposition of MgB2 Thin Films on Alumina-Buffered Si Substrates by using Hybrid Physical-Chemical Vapor Deposition Method

International Nuclear Information System (INIS)

Lee, T. G.; Park, S. W.; Seong, W. K.; Huh, J. Y.; Jung, S. G.; Kang, W. N.; Lee, B. K.; An, K. S.

2008-01-01

[ MgB 2 ] thin films were fabricated using hybrid physical-chemical vapor deposition (HPCVD) method on silicon substrates with buffers of alumina grown by using atomic layer deposition method. The growth war in a range of temperatures 500 - 600 degrees C and under the reactor pressures of 25 - 50 degrees C. There are some interfacial reactions in the as-grown films with impurities of mostly Mg 2 Si, MgAl 2 O 4 , and other phases. The T c 's of MgB 2 films were observed to be as high as 39 K, but the transition widths were increased with growth temperatures. The magnetization was measured as a function of temperature down to the temperature of 5 K, but the complete Meissner effect was not observed, which shows that the granular nature of weak links is prevailing. The formation of mostly Mg 2 Si impurity in HPCVD process is discussed, considering the diffusion and reaction of Mg vapor with silicon substrates.

Formation of graphene on BN substrate by vapor deposition method and size effects on its structure

Science.gov (United States)

Giang, Nguyen Hoang; Hanh, Tran Thi Thu; Ngoc, Le Nhu; Nga, Nguyen To; Van Hoang, Vo

2018-04-01

We report MD simulation of the growth of graphene by the vapor deposition on a two-dimensional hBN substrate. The systems (containing carbon vapor and hBN substrate) are relaxed at high temperature (1500 K), and then it is cooled down to room one (300 K). Carbon atoms interact with the substrate via the Lennard-Jones potential while the interaction between carbon atoms is computed via the Tersoff potential. Depending on the size of the model, different crystalline honeycomb structures have been found. Structural properties of the graphene obtained at 300 K are studied by analyzing radial distribution functions (RDFs), coordination numbers, ring statistics, interatomic distances, bond-angle distributions and 2D visualization of atomic configurations. We find that the models containing various numbers of atoms have a honeycomb structure. Besides, differences in structural properties of graphene formed by the vapor deposition on the substrate and free standing one are found. Moreover, the size effect on the structure is significant.

Method of preparing high-temperature-stable thin-film resistors

Science.gov (United States)

Raymond, L.S.

1980-11-12

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR) is disclosed. Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Method of preparing high-temperature-stable thin-film resistors

International Nuclear Information System (INIS)

Raymond, L.S.

1983-01-01

A chemical vapor deposition method is disclosed for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor

Modeling of Sheath Ion-Molecule Reactions in Plasma Enhanced Chemical Vapor Deposition of Carbon Nanotubes

Science.gov (United States)

Hash, David B.; Govindan, T. R.; Meyyappan, M.

2004-01-01

In many plasma simulations, ion-molecule reactions are modeled using ion energy independent reaction rate coefficients that are taken from low temperature selected-ion flow tube experiments. Only exothermic or nearly thermoneutral reactions are considered. This is appropriate for plasma applications such as high-density plasma sources in which sheaths are collisionless and ion temperatures 111 the bulk p!asma do not deviate significantly from the gas temperature. However, for applications at high pressure and large sheath voltages, this assumption does not hold as the sheaths are collisional and ions gain significant energy in the sheaths from Joule heating. Ion temperatures and thus reaction rates vary significantly across the discharge, and endothermic reactions become important in the sheaths. One such application is plasma enhanced chemical vapor deposition of carbon nanotubes in which dc discharges are struck at pressures between 1-20 Torr with applied voltages in the range of 500-700 V. The present work investigates The importance of the inclusion of ion energy dependent ion-molecule reaction rates and the role of collision induced dissociation in generating radicals from the feedstock used in carbon nanotube growth.

Observation and particle simulation of vaporized W, Mo, and Be in PISCES-B plasma for vapor-shielding studies

Directory of Open Access Journals (Sweden)

K. Ibano

2017-08-01

Full Text Available Interactions of Tungsten (W, Molybdenum (Mo, and Beryllium (Be vapors with a steady-state plasma were studied by the PISCES-B liner plasma experiments as well as Particle-In-Cell (PIC simulations for the understanding of vapor-shielding phenomena. Effective cooling of the plasma by laser-generated Be vapor was observed in PISCES-B. On the other hand, no apparent cooling was observed for W and Mo vapors. The PIC simulation explains these experimental observations of the difference between low-Z and high-Z vapors. Decrease of electron temperature due to the vapor ejection was observed in case of a simulation of the Be vapor. As for the W vapor, it was found that the plasma cooling is localized only near the wall at a higher electron density plasma (∼1019m−3. On the other hand, the appreciable plasma cooling can be observed in a lower density plasma (∼1018m−3 for the W vapor.

Nucleation and adhesion of diamond films on Co cemented tungsten carbide

Energy Technology Data Exchange (ETDEWEB)

Polini, R.; Santarelli, M.; Traversa, E.

1999-12-01

Diamond deposits were grown using hot filament chemical vapor deposition (CVD) on pretreated Co cemented tungsten carbide (WC-Co) substrates with an average grain size of 6 {micro}m. Depositions were performed with 0.5 or 1.0% methane concentration and with substrate temperatures ranging from 750 to 1,000 C. Diamond nucleation densities were measured by scanning electron microscopy. Scratched and bias-enhanced nucleation pretreated substrates showed the larger nucleation densities. Etching of the WC performed by Murakami's reagent, followed by surface-Co dissolution (MP pretreatment), led to a roughened but scarcely nucleating surface. The performance of a scratching prior to the MP pretreatment allowed one to increase the nucleation density, due scratching-induced defects, confined in the outermost layer of WC grains, which act as nucleation sites. Smaller nucleation densities were observed with increasing the substrate temperature and reducing the methane concentration, confirming that diamond nucleates via a heterogeneous process. The adhesion of continuous films was evaluated by the reciprocal of the slope of crack radius-indentation load functions. The substrate pretreatments mainly affected the film adhesion, while the influence of CVD process conditions was minor. The two main factors that improve the diamond film adhesion are the coating-substrate contact area and the surface-Co removal.

Chemically vapor deposited coatings for multibarrier containment of nuclear wastes

International Nuclear Information System (INIS)

Rusin, J.M.; Shade, J.W.; Kidd, R.W.; Browning, M.F.

1981-01-01

Chemical vapor deposition (CVD) was selected as a feasible method to coat ceramic cores, since the technology has previously been demonstrated for high-temperature gas-cooled reactor (HTGR) fuel particles. CVD coatings, including SiC, PyC (pyrolytic carbon), SiO 2 , and Al 2 O 3 were studied. This paper will discuss the development and characterization of PyC and Al 2 O 3 CVD coatings on supercalcine cores. Coatings were applied to 2 mm particles in either fluidized or vibrating beds. The PyC coating was deposited in a fluidized bed with ZrO 2 diluent from C 2 H 2 at temperatures between 1100 and 1200 0 C. The Al 2 O 3 coatings were deposited in a vibrated bed by a two-stage process to minimize loss of PyC during the overcoating operation. This process involved applying 10 μm of Al 2 O 3 using water vapor hydrolysis of AlCl 3 and then switching to the more surface-controlled hydrolysis via the H 2 + CO 2 reaction (3CO 2 + 3H 2 + 2AlCl 3 = Al 2 O 3 + 6HCl + 3CO). Typically, 50 to 80 μm Al 2 O 3 coatings were applied over 30 to 40 μm PyC coatings. The coatings were evaluated by metallographic examination, PyC oxidation tests, and leach resistance. After air oxidation for 100 hours at 750 0 C, the duplex PyC/Al 2 O 3 coated particles exhibited a weight loss of 0.01 percent. Leach resistance is being determined for temperatures from 50 to 150 0 C in various solutions. Typical results are given for selected ions. The leach resistance of supercalcine cores is significantly improved by the application of PyC and/or Al 2 O 3 coatings

Development and electrochemical characterization of Ni‐P coated tungsten incorporated electroless nickel coatings

Energy Technology Data Exchange (ETDEWEB)

Shibli, S.M.A., E-mail: smashibli@yahoo.com; Chinchu, K.S.

2016-08-01

Ni‐P-W alloy and composite coatings were prepared by incorporation of sodium tungstate/tungsten and Ni‐P coated tungsten into electroless nickel bath respectively. Good inter-particle interactions among the depositing elements i.e. Ni and P with the incorporating tungsten particles were achieved by means of pre-coated tungsten particle by electroless nickel covering prior to its addition into the electroless bath. The pre-coated tungsten particles got incorporated uniformly into the Ni-P matrix of the coating. The particles and the coatings were characterized at different stages by different techniques including X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectrometry (EDS). The electroless Ni-P coating incorporated with pre-coated tungsten exhibited considerably high hardness, thickness and deposition rate. The performance and corrosion resistance characteristics of the composite coating incorporated with the nickel coated tungsten were found to be superior over other conventional Ni-P-W ternary alloy coatings currently reported. - Highlights: • An amorphous Ni-P coating was effectively formed on tungsten particles. • Electroless ternary Ni-P-W composite coatings were successfully prepared. • Enhancement in the inter-particle interaction in the Ni-P composite matrix was achieved. • Efficient and uniform incorporation of the composite in the internal layer was evident. • The tungsten incorporated coating possessed effective barrier protection.

HTO deposition by vapor exchange between atmosphere and soil

International Nuclear Information System (INIS)

Bunnenberg, C.

1989-01-01

HTO deposition to soils occurs by vapor exchange between atmosphere and soil-air, when the concentration gradient is directed downwards, and it is principally independent from simultaneous transport of H 2 O. In relatively dry top soil, which is frequently the case, as it tries to attain equilibrium with the air humidity, HTO diffuses into deeper soil driven by the same mechanisms that caused the deposition process. The resulting HTO profile is depending on the atmospheric supply and the soil physical conditions, and it is the source for further tritium pathways, namely root uptake by plants and reemission from soil back into the ground-level air. Simulation experiments with soil columns exposed to HTO labeled atmospheres have proved the theoretical expectation that under certain boundary conditions the HTO profile can be described by an error function. The key parameter is the effective diffusion coefficient, which in turn is a function of the sorption characteristics of the particular soil. (orig.) [de

OPAL Silicon Tungsten Luminometer

CERN Multimedia

OPAL was one of the four experiments installed at the LEP particle accelerator from 1989 - 2000. The Silicon Tungsten Luminometer was part of OPAL's calorimeter which was used to measure the energy of particles. Most particles end their journey in calorimeters. These detectors measure the energy deposited when particles are slowed down and stopped.

Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide

DEFF Research Database (Denmark)

Sun, Jie; Lindvall, Niclas; Cole, Matthew T.

2012-01-01

Metal-catalyst-free chemical vapor deposition (CVD) of large area uniform nanocrystalline graphene on oxidized silicon substrates is demonstrated. The material grows slowly, allowing for thickness control down to monolayer graphene. The as-grown thin films are continuous with no observable pinholes...

Characterization of plasma coated tungsten heavy alloy

International Nuclear Information System (INIS)

Bose, A.; Kapoor, D.; Lankford, J. Jr.; Nicholls, A.E.

1996-01-01

The detrimental environmental impact of Depleted Uranium-based penetrators have led to tremendous development efforts in the area of tungsten heavy alloy based penetrators. One line of investigation involves the coating of tungsten heavy alloys with materials that are prone to shear localization. Plasma spraying of Inconel 718 and 4340 steel have been used to deposit dense coatings on tungsten heavy alloy substrates. The aim of the investigation was to characterize the coating primarily in terms of its microstructure and a special push-out test. The paper describes the results of the push-out tests and analyzes some of the possible failure mechanisms by carrying out microstructural characterization of the failed rings obtained from the push out tests

Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency.

Science.gov (United States)

Wen, Xixing; Chen, Chao; Lu, Shuaicheng; Li, Kanghua; Kondrotas, Rokas; Zhao, Yang; Chen, Wenhao; Gao, Liang; Wang, Chong; Zhang, Jun; Niu, Guangda; Tang, Jiang

2018-06-05

Antimony selenide is an emerging promising thin film photovoltaic material thanks to its binary composition, suitable bandgap, high absorption coefficient, inert grain boundaries and earth-abundant constituents. However, current devices produced from rapid thermal evaporation strategy suffer from low-quality film and unsatisfactory performance. Herein, we develop a vapor transport deposition technique to fabricate antimony selenide films, a technique that enables continuous and low-cost manufacturing of cadmium telluride solar cells. We improve the crystallinity of antimony selenide films and then successfully produce superstrate cadmium sulfide/antimony selenide solar cells with a certified power conversion efficiency of 7.6%, a net 2% improvement over previous 5.6% record of the same device configuration. We analyze the deep defects in antimony selenide solar cells, and find that the density of the dominant deep defects is reduced by one order of magnitude using vapor transport deposition process.

Deposition of magnetite particles onto alloy-800 steam generator tubes

Energy Technology Data Exchange (ETDEWEB)

Basset, M.; Arbeau, N.; McInerney, J.; Lister, D.H. [Univ. of New Brunswick, Dept. of Chemical Engineering, Fredericton, NB (Canada)

1998-07-01

Fouling is a particularly serious problem in the power generating industry. Deposits modify the thermalhydraulic characteristics of heat transfer surfaces by changing the resistance to heat transfer and the resistance to fluid flow, and, if thick enough, can harbour aggressive chemicals. Deposits are also implicated in the increase of radiation fields around working areas in the primary heat transfer systems of nuclear power plants. In order to understand the preliminary steps of the formation of corrosion product deposits on the outsides of steam generator tubes, a laboratory program has investigated the deposition of magnetite particles from suspension in water onto Alloy-800 surfaces under various conditions of flow, chemistry and boiling heat transfer. A recirculating loop made of stainless steel operating at less than 400kPa pressure, with a nominal coolant temperature of 90 degrees C, was equipped with a vertical glass column which housed a 2.5E-01m-long Alloy-800 boiler tube capable of generating a heat flux of 240kW/m{sup 2} . A concentration of suspended magnetite of 5.0E-03kg/m{sup 3} was maintained in the recirculating coolant, which was maintained at a pH of 7.5. The magnetite was synthesized with a sol-gel process, which was developed to produce reproducibly monodispersed, colloidal (<1{mu}m) and nearly spherical particles. A radiotracing method was used to characterize the deposit evolution with time and to quantify the removal of magnetite particles. The results from a series of deposition experiments are presented here. The deposition process is described in terms of a two-step mechanism: the transport step, involving the transport from the bulk of the liquid to the vicinity of the surface, followed by the attachment step, involving the attachment of the particle onto the surface. Under non-boiling heat transfer conditions, diffusion seems to be the dominant factor ruling deposition with a small contribution from thermophoresis; removal was

Deposition of magnetite particles onto alloy-800 steam generator tubes

International Nuclear Information System (INIS)

Basset, M.; Arbeau, N.; McInerney, J.; Lister, D.H.

1998-01-01

Fouling is a particularly serious problem in the power generating industry. Deposits modify the thermalhydraulic characteristics of heat transfer surfaces by changing the resistance to heat transfer and the resistance to fluid flow, and, if thick enough, can harbour aggressive chemicals. Deposits are also implicated in the increase of radiation fields around working areas in the primary heat transfer systems of nuclear power plants. In order to understand the preliminary steps of the formation of corrosion product deposits on the outsides of steam generator tubes, a laboratory program has investigated the deposition of magnetite particles from suspension in water onto Alloy-800 surfaces under various conditions of flow, chemistry and boiling heat transfer. A recirculating loop made of stainless steel operating at less than 400kPa pressure, with a nominal coolant temperature of 90 degrees C, was equipped with a vertical glass column which housed a 2.5E-01m-long Alloy-800 boiler tube capable of generating a heat flux of 240kW/m 2 . A concentration of suspended magnetite of 5.0E-03kg/m 3 was maintained in the recirculating coolant, which was maintained at a pH of 7.5. The magnetite was synthesized with a sol-gel process, which was developed to produce reproducibly monodispersed, colloidal (<1μm) and nearly spherical particles. A radiotracing method was used to characterize the deposit evolution with time and to quantify the removal of magnetite particles. The results from a series of deposition experiments are presented here. The deposition process is described in terms of a two-step mechanism: the transport step, involving the transport from the bulk of the liquid to the vicinity of the surface, followed by the attachment step, involving the attachment of the particle onto the surface. Under non-boiling heat transfer conditions, diffusion seems to be the dominant factor ruling deposition with a small contribution from thermophoresis; removal was considered

Studies on hydrogen separation membrane for IS process. Membrane preparation with porous α-alumina tube

International Nuclear Information System (INIS)

Hwang, Gab-Jin; Onuki, Kaoru; Shimizu, Saburo

1998-01-01

It was investigated the preparation technique of hydrogen separation membrane to enhance the decomposition ratio of hydrogen iodide in the thermochemical IS process. Hydrogen separation membranes based on porous α-alumina tubes having pore size of 100 nm and 10 nm were prepared by chemical vapor deposition using tetraethylorthosilicate (TEOS) as the Si source. In the hydrogen separation membrane, its pore was closed by the deposited silica and then the permeation of gas was affected by the hindrance diffusion. At 600degC, the selectivity ratios (H 2 /N 2 ) were 5.2 and 160 for the membranes based on porous α-alumina tube having pore size of 100 nm and 10 nm, respectively. (author)

High throughput semiconductor deposition system

Science.gov (United States)

Young, David L.; Ptak, Aaron Joseph; Kuech, Thomas F.; Schulte, Kevin; Simon, John D.

2017-11-21

A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 .mu.m/minute.

A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments

Science.gov (United States)

Gokoglu, S. A.; Kuczmarski, M. A.

1993-01-01

Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.

Status of technology R&D for the ITER tungsten divertor monoblock

Energy Technology Data Exchange (ETDEWEB)

Hirai, T., E-mail: takeshi.hirai@iter.org [ITER Organization, Route de Vinon-sur-Verdon, CS 90 046, 13067 St. Paul Lez Durance Cedex (France); Escourbiac, F.; Barabash, V.; Durocher, A.; Fedosov, A.; Ferrand, L.; Jokinen, T.; Komarov, V.; Merola, M.; Carpentier-Chouchana, S. [ITER Organization, Route de Vinon-sur-Verdon, CS 90 046, 13067 St. Paul Lez Durance Cedex (France); Arkhipov, N. [Project Center ITER, 1, Building 3, Kurchatov Sq., 123182 Moscow (Russian Federation); Kuznetcov, V.; Volodin, A. [NIIEFA, 3 doroga na Metallostroy, Metallostroy, St. Petersburg 196641 (Russian Federation); Suzuki, S.; Ezato, K.; Seki, Y. [JAEA, Fusion Research and Development Directorate JAEA, 801-1 Mukouyama, Naka, Ibaragi 311-0193 (Japan); Riccardi, B.; Bednarek, M.; Gavila, P. [F4E, c/Josep Pla, n.2, Torres Diagonal Litoral, Edificio B3, E-08019 Barcelona (Spain)

2015-08-15

In order to develop and validate the high performance tungsten monoblock technology, the full-tungsten divertor qualification program was defined. As the first step, small-scale mock-ups were manufactured and successfully tested under the required high heat flux loads. The test results demonstrated that the technology is available in Japan and Europe. Post-tests observation of the loaded W monoblocks showed generation of self-castellation – a crack along coolant tube axis. The cause of the self-castellation was discussed and a tungsten material characterization program is being developed with the objective to understand mechanical properties that influence the occurrence of the self-castellation.

Stress and stability of sputter deposited A-15 and bcc crystal structure tungsten thin films

Energy Technology Data Exchange (ETDEWEB)

O' Keefe, M.J.; Stutz, C.E.

1997-07-01

Magnetron sputter deposition was used to fabricate body centered cubic (bcc) and A-15 crystal structure W thin films. Previous work demonstrated that the as-deposited crystal structure of the films was dependent on the deposition parameters and that the formation of a metastable A-15 structure was favored over the thermodynamically stable bcc phase when the films contained a few atomic percent oxygen. However, the A-15 phase was shown to irreversibly transform into the bcc phase between 500 C and 650 C and that a significant decrease in the resistivity of the metallic films was measured after the transformation. The current investigation of 150 nm thick, sputter deposited A-15 and bcc tungsten thin films on silicon wafers consisted of a series of experiments in which the stress, resistivity and crystal structure of the films was measured as a function of temperatures cycles in a Flexus 2900 thin film stress measurement system. The as-deposited film stress was found to be a function of the sputtering pressure and presputter time; under conditions in which the as-deposited stress of the film was {approximately}1.5 GPa compressive delamination of the W film from the substrate was observed. Data from the thermal studies indicated that bcc film stress was not affected by annealing but transformation of the A-15 structure resulted in a large tensile increase in the stress of the film, regardless of the as-deposited stress of the film. In several instances, complete transformation of the A-15 structure into the bcc phase resulted in {ge}1 GPa tensile increase in film stress.

Stress and stability of sputter deposited A-15 and bcc crystal structure tungsten thin films

International Nuclear Information System (INIS)

O'Keefe, M.J.; Stutz, C.E.

1997-01-01

Magnetron sputter deposition was used to fabricate body centered cubic (bcc) and A-15 crystal structure W thin films. Previous work demonstrated that the as-deposited crystal structure of the films was dependent on the deposition parameters and that the formation of a metastable A-15 structure was favored over the thermodynamically stable bcc phase when the films contained a few atomic percent oxygen. However, the A-15 phase was shown to irreversibly transform into the bcc phase between 500 C and 650 C and that a significant decrease in the resistivity of the metallic films was measured after the transformation. The current investigation of 150 nm thick, sputter deposited A-15 and bcc tungsten thin films on silicon wafers consisted of a series of experiments in which the stress, resistivity and crystal structure of the films was measured as a function of temperatures cycles in a Flexus 2900 thin film stress measurement system. The as-deposited film stress was found to be a function of the sputtering pressure and presputter time; under conditions in which the as-deposited stress of the film was approximately1.5 GPa compressive delamination of the W film from the substrate was observed. Data from the thermal studies indicated that bcc film stress was not affected by annealing but transformation of the A-15 structure resulted in a large tensile increase in the stress of the film, regardless of the as-deposited stress of the film. In several instances, complete transformation of the A-15 structure into the bcc phase resulted in ge1 GPa tensile increase in film stress

Literature on fabrication of tungsten for application in pyrochemical processing of spent nuclear fuels

International Nuclear Information System (INIS)

Edstrom, C.M.; Phillips, A.G.; Johnson, L.D.; Corle, R.R.

1980-01-01

The pyrochemical processing of nuclear fuels requires crucibles, stirrers, and transfer tubing that will withstand the temperature and the chemical attack from molten salts and metals used in the process. This report summarizes the literature that pertains to fabrication (joining, chemical vapor deposition, plasma spraying, forming, and spinning) is the main theme. This report also summarizes a sampling of literature on molbdenum and the work previously performed at Argonne National Laboratory on other container materials used for pyrochemical processing of spent nuclear fuels

Highly sensitive and interference-free determination of bismuth in environmental samples by electrothermal vaporization atomic fluorescence spectrometry after hydride trapping on iridium-coated tungsten coil

International Nuclear Information System (INIS)

Liu Rui; Wu Peng; Xu Kailai; Lv Yi; Hou Xiandeng

2008-01-01

Bismuthine was on-line trapped on tungsten coil and subsequently electrothermally vaporized for the determination by atomic fluorescence spectrometry (AFS). Several noble metals, including Pd, Rh, Pt, and Ir, were explored as permanent chemical modifier for tungsten coil on-line trapping. Investigation showed that Ir gave the best performance, in which bismuthine was on-line trapped on Ir-coated tungsten coil at 560 o C, and then released at 1550 o C for subsequent transfer to AFS by a mixture of Ar and H 2 . Under optimum instrumental conditions, the trapping efficiency was found to be 73 ± 3%. With 120 s (12 mL sample volume) trapping time, a limit of detection (LOD) of 4 ng L -1 was obtained, compared to conventional hydride generation AFS (0.09 μg L -1 ); the LOD can be lowered down to 1 ng L -1 by increasing the trapping time to 480 s. The LOD was found to be better or at least comparable to literature levels involving on-line trapping and some other sophisticated instrumental methods such as ICP-MS and GF-AAS. A comprehensive interference study involving conventional hydride-forming elements and some transition metals was carried out, and the result showed that the gas phase interference from other hydride-forming elements was largely reduced, thanks to the use of on-line tungsten coil trapping. Finally, the proposed method was applied to the determination of bismuth in several biological and environmental standard reference materials, and a t-test shows that the analytical results by the proposed method have no significant difference from the certified values at the confidence level of 95%

Sensing system for detection and control of deposition on pendant tubes in recovery and power boilers

Science.gov (United States)

Kychakoff, George [Maple Valley, WA; Afromowitz, Martin A [Mercer Island, WA; Hogle, Richard E [Olympia, WA

2008-10-14

A system for detection and control of deposition on pendant tubes in recovery and power boilers includes one or more deposit monitoring sensors operating in infrared regions of about 4 or 8.7 microns and directly producing images of the interior of the boiler, or producing feeding signals to a data processing system for information to enable a distributed control system by which the boilers are operated to operate said boilers more efficiently. The data processing system includes an image pre-processing circuit in which a 2-D image formed by the video data input is captured, and includes a low pass filter for performing noise filtering of said video input. It also includes an image compensation system for array compensation to correct for pixel variation and dead cells, etc., and for correcting geometric distortion. An image segmentation module receives a cleaned image from the image pre-processing circuit for separating the image of the recovery boiler interior into background, pendant tubes, and deposition. It also accomplishes thresholding/clustering on gray scale/texture and makes morphological transforms to smooth regions, and identifies regions by connected components. An image-understanding unit receives a segmented image sent from the image segmentation module and matches derived regions to a 3-D model of said boiler. It derives a 3-D structure the deposition on pendant tubes in the boiler and provides the information about deposits to the plant distributed control system for more efficient operation of the plant pendant tube cleaning and operating systems.

Physically vapor deposited coatings on tools: performance and wear phenomena

International Nuclear Information System (INIS)

Koenig, W.; Fritsch, R.; Kammermeier, D.

1991-01-01

Coatings produced by physical vapor deposition (PVD) enhance the performance of tools for a broad variety of production processes. In addition to TiN, nowadays (Ti,Al)N and Ti(C,N) coated tools are available. This gives the opportunity to compare the performance of different coatings under identical machining conditions and to evaluate causes and phenomena of wear. TiN, (Ti,Al)N and Ti(C,N) coatings on high speed steel (HSS) show different performances in milling and turning of heat treated steel. The thermal and frictional properties of the coating materials affect the structure, the thickness and the flow of the chips, the contact area on the rake face and the tool life. Model tests show the influence of internal cooling and the thermal conductivity of coated HSS inserts. TiN and (Ti,Zr)N PVD coatings on cemented carbides were examined in interrupted turning and in milling of heat treated steel. Experimental results show a significant influence of typical time-temperature cycles of PVD and chemical vapor deposition (CVD) coating processes on the physical data and on the performance of the substrates. PVD coatings increase tool life, especially towards lower cutting speeds into ranges which cannot be applied with CVD coatings. The reason for this is the superior toughness of the PVD coated carbide. The combination of tough, micrograin carbide and PVD coating even enables broaching of case hardened sliding gears at a cutting speed of 66 m min -1 . (orig.)

Direct determination of cadmium in foods by solid sampling electrothermal vaporization inductively coupled plasma mass spectrometry using a tungsten coil trap

Science.gov (United States)

Zhang, Ying; Mao, Xuefei; Liu, Jixin; Wang, Min; Qian, Yongzhong; Gao, Chengling; Qi, Yuehan

2016-04-01

In this work, a solid sampling device consisting of a tungsten coil trap, porous carbon vaporizer and on-line ashing furnace of a Ni-Cr coil was interfaced with inductively coupled plasma mass spectrometry (ICP-MS). A modified double gas circuit system was employed that was composed of carrier and supplemental gas lines controlled by separate gas mass flow controllers. For Cd determination in food samples using the assembled solid sampling ICP-MS, the optimal ashing and vaporization conditions, flow rate of the argon-hydrogen (Ar/H2) (v:v = 24:1) carrier gas and supplemental gas, and minimum sampling mass were investigated. Under the optimized conditions, the limit of quantification was 0.5 pg and the relative standard deviation was within a 10.0% error range (n = 10). Furthermore, the mean spiked recoveries for various food samples were 99.4%-105.9% (n = 6). The Cd concentrations measured by the proposed method were all within the certified values of the reference materials or were not significantly different (P > 0.05) from those of the microwave digestion ICP-MS method, demonstrating the good accuracy and precision of the solid sampling ICP-MS method for Cd determination in food samples.

Low-Temperature Process for Atomic Layer Chemical Vapor Deposition of an Al2O3 Passivation Layer for Organic Photovoltaic Cells.

Science.gov (United States)

Kim, Hoonbae; Lee, Jihye; Sohn, Sunyoung; Jung, Donggeun

2016-05-01

Flexible organic photovoltaic (OPV) cells have drawn extensive attention due to their light weight, cost efficiency, portability, and so on. However, OPV cells degrade quickly due to organic damage by water vapor or oxygen penetration when the devices are driven in the atmosphere without a passivation layer. In order to prevent damage due to water vapor or oxygen permeation into the devices, passivation layers have been introduced through methods such as sputtering, plasma enhanced chemical vapor deposition, and atomic layer chemical vapor deposition (ALCVD). In this work, the structural and chemical properties of Al2O3 films, deposited via ALCVD at relatively low temperatures of 109 degrees C, 200 degrees C, and 300 degrees C, are analyzed. In our experiment, trimethylaluminum (TMA) and H2O were used as precursors for Al2O3 film deposition via ALCVD. All of the Al2O3 films showed very smooth, featureless surfaces without notable defects. However, we found that the plastic flexible substrate of an OPV device passivated with 300 degrees C deposition temperature was partially bended and melted, indicating that passivation layers for OPV cells on plastic flexible substrates need to be formed at temperatures lower than 300 degrees C. The OPV cells on plastic flexible substrates were passivated by the Al2O3 film deposited at the temperature of 109 degrees C. Thereafter, the photovoltaic properties of passivated OPV cells were investigated as a function of exposure time under the atmosphere.

Fabrication of 100 A class, 1 m long coated conductor tapes by metal organic chemical vapor deposition and pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Selvamanickam, V.; Lee, H.G.; Li, Y.; Xiong, X.; Qiao, Y.; Reeves, J.; Xie, Y.; Knoll, A.; Lenseth, K

2003-10-15

SuperPower has been scaling up YBa{sub 2}Cu{sub 3}O{sub x}-based second-generation superconducting tapes by techniques such as pulsed laser deposition (PLD) using industrial laser and metal organic chemical vapor deposition (MOCVD). Both techniques offer advantage of high deposition rates, which is important for high throughput. Using highly-polished substrates produced in a reel-to-reel polishing facility and buffer layers deposited in a pilot ion beam assisted deposition facility, meter-long second-generation high temperature superconductor tapes have been produced. 100 A class, meter-long coated conductor tapes have been reproducibly demonstrated in this work by both MOCVD and PLD. The best results to date are 148 A over 1.06 m by MOCVD and 135 A over 1.1 m by PLD using industrial laser.

Adhesion of non-selective CVD tungsten to silicon dioxide

International Nuclear Information System (INIS)

Woodruff, D.W.; Wilson, R.H.; Sanchez-Martinez, R.A.

1986-01-01

Adhesion of non-selective, CVD tungsten to silicon dioxide is a critical issue in the development of tungsten as a metalization for VLSI circuitry. Without special adhesion promoters, tungsten deposited from WF/sub 6/ and H/sub 2/ has typically failed a standard tape test over all types of silicon oxides and nitrides. The reasons for failure of thin films, and CVD tungsten in particular are explored along with standard techniques for improving adhesion of thin films. Experiments are reported which include a number of sputtered metals as adhesion promoters, as well as chemical and plasma treatment of the oxide surface. Sputtered molybdenum is clearly the superior adhesion promoting layer from these tests. Traditional adhesion layers such as chromium or titanium failed as adhesion layers for CVD tungsten possibly due to chemical reactions between the WF/sub 6/ and Cr or Ti

Molecular Orientation in Two Component Vapor-Deposited Glasses: Effect of Substrate Temperature and Molecular Shape

Science.gov (United States)

Powell, Charles; Jiang, Jing; Walters, Diane; Ediger, Mark

Vapor-deposited glasses are widely investigated for use in organic electronics including the emitting layers of OLED devices. These materials, while macroscopically homogenous, have anisotropic packing and molecular orientation. By controlling this orientation, outcoupling efficiency can be increased by aligning the transition dipole moment of the light-emitting molecules parallel to the substrate. Light-emitting molecules are typically dispersed in a host matrix, as such, it is imperative to understand molecular orientation in two-component systems. In this study we examine two-component vapor-deposited films and the orientations of the constituent molecules using spectroscopic ellipsometry, UV-vis and IR spectroscopy. The role of temperature, composition and molecular shape as it effects molecular orientation is examined for mixtures of DSA-Ph in Alq3 and in TPD. Deposition temperature relative to the glass transition temperature of the two-component mixture is the primary controlling factor for molecular orientation. In mixtures of DSA-Ph in Alq3, the linear DSA-Ph has a horizontal orientation at low temperatures and slight vertical orientation maximized at 0.96Tg,mixture, analogous to one-component films.

The development of chemically vapor deposited mullite coatings for the corrosion protection of SiC

Energy Technology Data Exchange (ETDEWEB)

Auger, M.; Hou, P.; Sengupta, A.; Basu, S.; Sarin, V. [Boston Univ., MA (United States)

1998-05-01

Crystalline mullite coatings have been chemically vapor deposited onto SiC substrates to enhance the corrosion and oxidation resistance of the substrate. Current research has been divided into three distinct areas: (1) Development of the deposition processing conditions for increased control over coating`s growth rate, microstructure, and morphology; (2) Analysis of the coating`s crystal structure and stability; (3) The corrosion resistance of the CVD mullite coating on SiC.

The Corrosion Protection of Metals by Ion Vapor Deposited Aluminum

Science.gov (United States)

Danford, M. D.

1993-01-01

A study of the corrosion protection of substrate metals by ion vapor deposited aluminum (IVD Al) coats has been carried out. Corrosion protection by both anodized and unanodized IVD Al coats has been investigated. Base metals included in the study were 2219-T87 Al, 7075-T6 Al, Titanium-6 Al-4 Vanadium (Ti-6Al-4V), 4130 steel, D6AC steel, and 4340 steel. Results reveal that the anodized IVD Al coats provide excellent corrosion protection, but good protection is also achieved by IVD Al coats that have not been anodized.

Limitations of patterning thin films by shadow mask high vacuum chemical vapor deposition

International Nuclear Information System (INIS)

Reinke, Michael; Kuzminykh, Yury; Hoffmann, Patrik

2014-01-01

A key factor in engineering integrated devices such as electro-optic switches or waveguides is the patterning of high quality crystalline thin films into specific geometries. In this contribution high vacuum chemical vapor deposition (HV-CVD) was employed to grow titanium dioxide (TiO 2 ) patterns onto silicon. The directed nature of precursor transport – which originates from the high vacuum environment during the process – allows shading certain regions on the substrate by shadow masks and thus depositing patterned thin films. While the use of such masks is an emerging field in stencil or shadow mask lithography, their use for structuring thin films within HV-CVD has not been reported so far. The advantage of the employed technique is the precise control of lateral spacing and of the distance between shading mask and substrate surface which is achieved by manufacturing them directly on the substrate. As precursor transport takes place in the molecular flow regime, the precursor impinging rates (and therefore the film growth rates) on the surface can be simulated as function of the reactor and shading mask geometry using a comparatively simple mathematical model. In the current contribution such a mathematical model, which predicts impinging rates on plain or shadow mask structured substrates, is presented. Its validity is confirmed by TiO 2 -deposition on plain silicon substrates (450 °C) using titanium tetra isopropoxide as precursor. Limitations of the patterning process are investigated by the deposition of TiO 2 on structured substrates and subsequent shadow mask lift-off. The geometry of the deposits is according to the mathematical model. Shading effects due to the growing film enables to fabricate deposits with predetermined variations in topography and non-flat top deposits which are complicated to obtain by classical clean room processes. As a result of the enhanced residual pressure of decomposition products and titanium precursors and the

Phase Equilibrium of TiO2 Nanocrystals in Flame-Assisted Chemical Vapor Deposition.

Science.gov (United States)

Liu, Changran; Camacho, Joaquin; Wang, Hai

2018-01-19

Nano-scale titanium oxide (TiO 2 ) is a material useful for a wide range of applications. In a previous study, we showed that TiO 2 nanoparticles of both rutile and anatase crystal phases could be synthesized over the size range of 5 to 20 nm in flame-assisted chemical vapor deposition. Rutile was unexpectedly dominant in oxygen-lean synthesis conditions, whereas anatase is the preferred phase in oxygen-rich gases. The observation is in contrast to the 14 nm rutile-anatase crossover size derived from the existing crystal-phase equilibrium model. In the present work, we made additional measurements over a wider range of synthesis conditions; the results confirm the earlier observations. We propose an improved model for the surface energy that considers the role of oxygen desorption at high temperatures. The model successfully explains the observations made in the current and previous work. The current results provide a useful path to designing flame-assisted chemical vapor deposition of TiO 2 nanocrystals with controllable crystal phases. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) yields better Hydrolytical Stability of Biocompatible SiOx Thin Films on Implant Alumina Ceramics compared to Rapid Thermal Evaporation Physical Vapor Deposition (PVD).

Science.gov (United States)

Böke, Frederik; Giner, Ignacio; Keller, Adrian; Grundmeier, Guido; Fischer, Horst

2016-07-20

Densely sintered aluminum oxide (α-Al2O3) is chemically and biologically inert. To improve the interaction with biomolecules and cells, its surface has to be modified prior to use in biomedical applications. In this study, we compared two deposition techniques for adhesion promoting SiOx films to facilitate the coupling of stable organosilane monolayers on monolithic α-alumina; physical vapor deposition (PVD) by thermal evaporation and plasma enhanced chemical vapor deposition (PE-CVD). We also investigated the influence of etching on the formation of silanol surface groups using hydrogen peroxide and sulfuric acid solutions. The film characteristics, that is, surface morphology and surface chemistry, as well as the film stability and its adhesion properties under accelerated aging conditions were characterized by means of X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), inductively coupled plasma-optical emission spectroscopy (ICP-OES), and tensile strength tests. Differences in surface functionalization were investigated via two model organosilanes as well as the cell-cytotoxicity and viability on murine fibroblasts and human mesenchymal stromal cells (hMSC). We found that both SiOx interfaces did not affect the cell viability of both cell types. No significant differences between both films with regard to their interfacial tensile strength were detected, although failure mode analyses revealed a higher interfacial stability of the PE-CVD films compared to the PVD films. Twenty-eight day exposure to simulated body fluid (SBF) at 37 °C revealed a partial delamination of the thermally deposited PVD films whereas the PE-CVD films stayed largely intact. SiOx layers deposited by both PVD and PE-CVD may thus serve as viable adhesion-promoters for subsequent organosilane coupling agent binding to α-alumina. However, PE-CVD appears to be favorable for long-term direct film exposure to aqueous

Handbook of chemical vapor deposition principles, technology and applications

CERN Document Server

Pierson, Hugh O

1999-01-01

Turn to this new second edition for an understanding of the latest advances in the chemical vapor deposition (CVD) process. CVD technology has recently grown at a rapid rate, and the number and scope of its applications and their impact on the market have increased considerably. The market is now estimated to be at least double that of a mere seven years ago when the first edition of this book was published. The second edition is an update with a considerably expanded and revised scope. Plasma CVD and metallo-organic CVD are two major factors in this rapid growth. Readers will find the latest

Physical characterization of sputter-deposited amorphous tungsten oxynitride thin films

Energy Technology Data Exchange (ETDEWEB)

Nunez, O.R.; Moreno Tarango, A.J. [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, TX 79968 (United States); Murphy, N.R. [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base (WPAFB), Dayton, OH 45433 (United States); Phinney, L.C.; Hossain, K. [Amethyst Research Inc., 123 Case Circle, Ardmore, OK 73401 (United States); Ramana, C.V., E-mail: rvchintalapalle@utep.edu [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, TX 79968 (United States)

2015-12-01

Tungsten oxynitride (W–O–N) thin films were deposited onto silicon (100) and quartz substrates using direct current (DC) sputtering. Composition variations in the W–O–N films were obtained by varying the nitrogen gas flow rate from 0 to 20 sccm, while keeping the total gas flow constant at 40 sccm using 20 sccm of argon with the balance comprised of oxygen. The resulting crystallinity, optical properties, and chemical composition of the DC sputtered W–O–N films were evaluated. All the W–O–N films measured were shown to be amorphous using X-ray diffraction. Spectrophotometry results indicate that the optical parameters, namely, the transmission magnitude and band gap (E{sub g}), are highly dependent on the nitrogen content in the reactive gas mixture. Within the W–O–N system, E{sub g} was able to be precisely tailored between 2.9 eV and 1.9 eV, corresponding to fully stoichiometric WO{sub 3} and highly nitrided W–O–N, respectively. Rutherford backscattering spectrometry (RBS) coupled with X-ray photoelectron spectroscopy (XPS) measurements indicate that the composition of the films varies from WO{sub 3} to W–O–N composite oxynitride films. - Highlights: • W–O–N films of ~ 100 nm thick were sputter-deposited by varying nitrogen gas flow rate. • Nitrogen incorporation into W-oxide is effective at or after 9 sccm flow rate of nitrogen. • The band gap significantly decreases from ~ 3.0 eV to ~ 2.1 eV with progressive increase in nitrogen content. • A composite oxide-semiconductor of W–O–N is proposed to explain the optical properties.

Thermal barrier coatings of rare earth materials deposited by electron beam-physical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Xu Zhenhua [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China); Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); He Limin, E-mail: he_limin@yahoo.co [Beijing Institute of Aeronautical Materials, Department 5, P.O. Box 81-5, Beijing 100095 (China); Chen Xiaolong; Zhao Yu [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China); Cao Xueqiang, E-mail: xcao@ciac.jl.c [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

2010-10-15

Thermal barrier coatings (TBCs) have very important applications in gas turbines for higher thermal efficiency and protection of components at high temperature. TBCs of rare earth materials such as lanthanum zirconate (La{sub 2}Zr{sub 2}O{sub 7}, LZ), lanthanum cerate (La{sub 2}Ce{sub 2}O{sub 7}, LC), lanthanum cerium zirconate (La{sub 2}(Zr{sub 0.7}Ce{sub 0.3}){sub 2}O{sub 7}, LZ7C3) were prepared by electron beam-physical vapor deposition (EB-PVD). The composition, crystal structure, cross-sectional morphology and cyclic oxidation behavior of these coatings were studied. These coatings have partially deviated from their original compositions due to the different evaporation rates of oxides, and the deviation could be reduced by properly controlling the deposition condition. A double ceramic layer-thermal barrier coatings (DCL-TBCs) of LZ7C3 and LC could also be deposited with a single LZ7C3 ingot by properly controlling the deposition energy. LaAlO{sub 3} is formed due to the chemical reaction between LC and Al{sub 2}O{sub 3} in the thermally grown oxide (TGO) layer. The failure of DCL-TBCs is a result of the sintering-induced of LZ7C3 coating and the chemical incompatibility of LC and TGO. Since no single material that has been studied so far satisfies all the requirements for high temperature applications, DCL-TBCs are an important development direction of TBCs.

Industrialization of Hot Wire Chemical Vapor Deposition for thin film applications

International Nuclear Information System (INIS)

Schropp, R.E.I.

2015-01-01

The consequences of implementing a Hot Wire Chemical Vapor Deposition (HWCVD) chamber into an existing in-line or roll-to-roll reactor are described. The hardware and operation of the HWCVD production reactor is compared to that of existing roll-to-roll reactors based on Plasma Enhanced Chemical Vapor Deposition. The most important consequences are the technical consequences and the economic consequences, which are both discussed. The technical consequences are adaptations needed to the hardware and to the processing sequences due to the different interaction of the HWCVD process with the substrate and already deposited layers. The economic consequences are the reduced investments in radio frequency (RF) supplies and RF components. This is partially offset by investments that have to be made in higher capacity pumping systems. The most mature applications of HWCVD are moisture barrier coatings for thin film flexible devices such as Organic Light Emitting Diodes and Organic Photovoltaics, and passivation layers for multicrystalline Si solar cells, high mobility field effect transistors, and silicon heterojunction cells (also known as heterojunction cells with intrinsic thin film layers). Another example is the use of Si in thin film photovoltaics. The cost perspective per unit of thin film photovoltaic product using HWCVD is estimated at 0.07 €/Wp for the Si thin film component. - Highlights: • Review of consequences of implementing Hot Wire CVD into a manufacturing plant • Aspects of scaling up to large area and continuous manufacturing are discussed • Economic advantage of introducing a HWCVD process in a production system is estimated • Using HWCVD, the cost for the Si layers in photovoltaic products is 0.08 €/Wp.

Industrialization of Hot Wire Chemical Vapor Deposition for thin film applications

Energy Technology Data Exchange (ETDEWEB)

Schropp, R.E.I., E-mail: r.e.i.schropp@tue.nl

2015-11-30

The consequences of implementing a Hot Wire Chemical Vapor Deposition (HWCVD) chamber into an existing in-line or roll-to-roll reactor are described. The hardware and operation of the HWCVD production reactor is compared to that of existing roll-to-roll reactors based on Plasma Enhanced Chemical Vapor Deposition. The most important consequences are the technical consequences and the economic consequences, which are both discussed. The technical consequences are adaptations needed to the hardware and to the processing sequences due to the different interaction of the HWCVD process with the substrate and already deposited layers. The economic consequences are the reduced investments in radio frequency (RF) supplies and RF components. This is partially offset by investments that have to be made in higher capacity pumping systems. The most mature applications of HWCVD are moisture barrier coatings for thin film flexible devices such as Organic Light Emitting Diodes and Organic Photovoltaics, and passivation layers for multicrystalline Si solar cells, high mobility field effect transistors, and silicon heterojunction cells (also known as heterojunction cells with intrinsic thin film layers). Another example is the use of Si in thin film photovoltaics. The cost perspective per unit of thin film photovoltaic product using HWCVD is estimated at 0.07 €/Wp for the Si thin film component. - Highlights: • Review of consequences of implementing Hot Wire CVD into a manufacturing plant • Aspects of scaling up to large area and continuous manufacturing are discussed • Economic advantage of introducing a HWCVD process in a production system is estimated • Using HWCVD, the cost for the Si layers in photovoltaic products is 0.08 €/Wp.

On the Growth and Microstructure of Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

Directory of Open Access Journals (Sweden)

Handuja Sangeeta

2010-01-01

Full Text Available Abstract Carbon nanotubes (CNTs were deposited on various substrates namely untreated silicon and quartz, Fe-deposited silicon and quartz, HF-treated silicon, silicon nitride-deposited silicon, copper foil, and stainless steel mesh using thermal chemical vapor deposition technique. The optimum parameters for the growth and the microstructure of the synthesized CNTs on these substrates are described. The results show that the growth of CNTs is strongly influenced by the substrate used. Vertically aligned multi-walled CNTs were found on quartz, Fe-deposited silicon and quartz, untreated silicon, and on silicon nitride-deposited silicon substrates. On the other hand, spaghetti-type growth was observed on stainless steel mesh, and no CNT growth was observed on HF-treated silicon and copper. Silicon nitride-deposited silicon substrate proved to be a promising substrate for long vertically aligned CNTs of length 110–130 μm. We present a possible growth mechanism for vertically aligned and spaghetti-type growth of CNTs based on these results.

Experimental study of flow patterns near tube support structures

International Nuclear Information System (INIS)

Rummens, H.E.C.; Turner, C.W.

1994-07-01

Extensive blockage of broached support plates in steam generators has occurred at the Bruce A Nuclear Generating Station (NGS), forcing unit derating in 1988 March. Blockage has also been found on the lower broached plates of the Pickering B and Point Lepreau NGSs. Water chemistry and operating conditions are known to influence fouling directly. We suspect that flow patterns also play a role, that these patterns are influenced by the geometry of steam generator (SG) components, and that particularly the broached plate design actively creates an environment favorable to deposition. Experiments are in progress to examine the flow patterns near various tube supports: the broached plate, two types of lattice bars, and the formed bars. Preliminary tests in an air/water loop with 1/2- and 7-tube SG mockups containing the tube supports have been completed. Flow patterns were visualized using injected air bubbles. Local velocities and turbulence levels were measured using a laser technique, which confirmed observations of flow recirculation and stagnation. Axial pressure profiles were measured to determine overall resistance coefficients, and to identify local pressure extremes. Some visualization tests were also carried out on an artificially fouled broached plate. Based on results to date, several deposition mechanisms are proposed: deposition of particles in stagnant regions, deposition of solubles due to flashing in low-pressure regions, and deposition in smaller channels due to steam migration toward larger channels. A qualitative assessment of the tube support designs based on these mechanisms implies that the relative resistances to fouling are: (WORST) broach plate << lattice bars << formed bars (BEST). As the air/water simulation shows only hydraulic flow patterns, further tests will be done in a simple liquid/vapor Freon loop to examine thermal effects. (author). 3 refs., 10 figs

Discussion on numerical simulation techniques for patterns of water vapor rise and droplet deposition at NPP cooling tower

International Nuclear Information System (INIS)

Guo Dongpeng; Yao Rentai

2010-01-01

Based on the working principle of cooling tower, analysis and comparison are made of both advantages and disadvantages of the numerical simulation models, such as ORFAD, KUMULUS, ISCST:A, ANL/UI, CFD etc., which predict the rise and droplet deposition pattern of cooling tower water vapor. The results showed that, CFD model is currently a better model that is used of three-dimensional Renault fluid flow equations predicting the rise and droplet deposition pattern of cooling tower water vapor. The impact of the line trajectory deviation and the speed change inn plume rising is not considered in any other models, and they can not be used for prediction of particle rise and droplet deposition when a larger particle or large buildings in the direction of cooling tower. (authors)

Implantation of titanium, chromium, yttrium, molybdenum, silver, hafnium, tantalum, tungsten and platinum ions generated by a metal vapor vacuum ion source into 440C stainless steel

International Nuclear Information System (INIS)

Sasaki, Jun; Hayashi, Kazunori; Sugiyama, Kenji; Ichiko, Osami; Hashiguchi, Yoshihiro

1992-01-01

Titanium, yttrium, molybdenum, silver, chromium, hafnium, tantalum, tungsten and platinum ions generated by a metal vapor vacuum arc (MEVVA) ion source were implanted into 440C stainless steel in the dose region 10 17 ions cm -2 with extraction voltages of up to 70 kV. Glow discharge spectroscopy (GDS), friction coefficient, and Vickers microhardness of the specimens were studied. Grooves made by friction tests were investigated by electron probe microanalysis (EPMA). GDS showed incorporation of carbon in the yttrium, hafnium, tantalum, tungsten and platinum implanted specimens, as well as titanium implanted samples. A large amount of oxygen was observed in the yttrium implanted specimen. The friction coefficient was measured by reciprocating sliding of an unimplanted 440C ball without lubricant at a load of 0.245 N. The friction decreased and achieved a stable state after implantation of titanium, hafnium and tantalum. The friction coefficient of the platinum implanted specimen showed a gradual decrease after several cycles of sliding at high friction coefficient. The yttrium implanted sample exhibited a decreased but slightly unstable friction coefficient. Results from EPMA showed that the implanted elements, which gave decreased friction, remained even after sliding of 200 cycles. Implantation of chromium, molybdenum, silver and tungsten did not provide a decrease in friction and the implants were gone from the wear grooves after the sliding tests. (orig.)

Carbonized tantalum catalysts for catalytic chemical vapor deposition of silicon films

Energy Technology Data Exchange (ETDEWEB)

Cheng Shimin [State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Dalian National Laboratory for Clean Energy, Dalian 116023 (China); Graduate University of Chinese Academy of Sciences, Beijing 100049 (China); Gao Huiping; Ren Tong; Ying Pinliang [State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Dalian National Laboratory for Clean Energy, Dalian 116023 (China); Li Can, E-mail: canli@dicp.ac.cn [State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Dalian National Laboratory for Clean Energy, Dalian 116023 (China)

2012-06-01

Catalytic chemical vapor deposition (Cat-CVD) has been demonstrated as a promising way to prepare device-quality silicon films. However, catalyst ageing due to Si contamination is an urgency to be solved for the practical application of the technique. In this study, the effect of carbonization of tantalum catalyst on its structure and performance was investigated. The carbonized Ta catalyst has a TaC surface layer which is preserved over the temperature range between 1450 and 1750 Degree-Sign C and no Si contamination occurs on the catalyst after long-term use. Si film prepared using the carbonized Ta catalyst has a similar crystal structure to that prepared by uncarbonized Ta catalyst. Formation of the TaC surface layer can alleviate the ageing problem of the catalyst, which shows great potential as a stable catalyst for Cat-CVD of Si films. - Highlights: Black-Right-Pointing-Pointer Si films prepared by catalytic chemical vapor deposition. Black-Right-Pointing-Pointer Carbonized Ta with a TaC surface layer used as catalyst. Black-Right-Pointing-Pointer TaC surface structure preserved after long-term use in a wide temperature range. Black-Right-Pointing-Pointer Help to solve the ageing problem of metal catalysts. Black-Right-Pointing-Pointer Si film obtained has a similar crystal structure to that prepared by Ta catalyst.

Coating of carbon short fibers with thin ceramic layers by chemical vapor deposition

International Nuclear Information System (INIS)

Hackl, Gerrit; Gerhard, Helmut; Popovska, Nadejda

2006-01-01

Carbon short fiber bundles with a length of 6 mm were uniformly coated using specially designed, continuous chemical vapor deposition (CVD) equipment. Thin layers of titanium nitride, silicon nitride (SiC) and pyrolytic carbon (pyC) were deposited onto several kilograms of short fibers in this large scale CVD reactor. Thermo-gravimetric analyses and scanning electron microscopy investigations revealed layer thicknesses between 20 and 100 nm on the fibers. Raman spectra of pyC coated fibers show a change of structural order depending on the CVD process parameters. For the fibers coated with SiC, Raman investigations showed a deposition of amorphous SiC. The coated carbon short fibers will be applied as reinforcing material in composites with ceramic and metallic matrices

An economic analysis of the deposition of electrochromic WO3 via sputtering or plasma enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Garg, D.; Henderson, P.B.; Hollingsworth, R.E.; Jensen, D.G.

2005-01-01

The costs of manufacturing electrochromic WO 3 thin films deposited by either radio frequency plasma enhanced chemical vapor deposition (PECVD) or DC reactive magnetron sputtering of metal targets were modeled. Both inline systems for large area glass substrates and roll-to-roll systems for flexible webs were compared. Costs of capital, depreciation, raw materials, labor, power, and other miscellaneous items were accounted for in the model. The results predict that on similar sized systems, PECVD can produce electrochromic WO 3 for as little as one-third the cost, and have more than 10 times the annual production capacity of sputtering. While PECVD cost is dominated by raw materials, primarily WF 6 , sputtering cost is dominated by labor and depreciation

Novel Prospects for Plasma Spray-Physical Vapor Deposition of Columnar Thermal Barrier Coatings

Science.gov (United States)

Anwaar, Aleem; Wei, Lianglinag; Guo, Qian; Zhang, Baopeng; Guo, Hongbo

2017-12-01

Plasma spray-physical vapor deposition (PS-PVD) is an emerging coating technique that can produce columnar thermal barrier coatings from vapor phase. Feedstock treatment at the start of its trajectory in the plasma torch nozzle is important for such vapor-phase deposition. This study describes the effects of the plasma composition (Ar/He) on the plasma characteristics, plasma-particle interaction, and particle dynamics at different points spatially distributed inside the plasma torch nozzle. The results of calculations show that increasing the fraction of argon in the plasma gas mixture enhances the momentum and heat flow between the plasma and injected feedstock. For the plasma gas combination of 45Ar/45He, the total enthalpy transferred to a representative powder particle inside the plasma torch nozzle is highest ( 9828 kJ/kg). Moreover, due to the properties of the plasma, the contribution of the cylindrical throat, i.e., from the feed injection point (FIP) to the start of divergence (SOD), to the total transferred energy is 69%. The carrier gas flow for different plasma gas mixtures was also investigated by optical emission spectroscopy (OES) measurements of zirconium emissions. Yttria-stabilized zirconia (YSZ) coating microstructures were produced when using selected plasma gas compositions and corresponding carrier gas flows; structural morphologies were found to be in good agreement with OES and theoretical predictions. Quasicolumnar microstructure was obtained with porosity of 15% when applying the plasma composition of 45Ar/45He.

Controllable growth of nanostructured carbon from coal tar pitch by chemical vapor deposition

International Nuclear Information System (INIS)

Liu Xuguang; Yang Yongzhen; Ji Weiyun; Liu Hongyan; Zhang Chunyi; Xu Bingshe

2007-01-01

The direct synthesis of vapor grown carbon fibers with different diameters was achieved by the pyrolysis of coal tar pitch by chemical vapor deposition. The products were characterized by field-emission scanning electron microscopy, high resolution transmission electron microscopy, X-ray diffraction and Raman spectroscopy. The experimental results demonstrated that ferrocene content, reaction temperature and Ar flow rate strongly influenced the yield and nature of nanostructured carbon materials, pure carbon microbeads, with diameter distribution ranging from 450 to 650 nm, were also obtained in the absence of catalyst, uniform and straight carbon nanofibers with the outer diameter of about 115 nm were obtained and curl and thick carbon fibers with narrow diameter distribution of 300-350 nm were produced

Fouling deposition characteristic by variation of coal particle size and deposition temperature in DTF (Drop Tube Furnace)

Energy Technology Data Exchange (ETDEWEB)

Namkung, Hueon; Jeon, Youngshin; Kim, Hyungtaek [Ajou Univ., Suwon (Korea, Republic of). Div. of Energy Systems Research; Xu, Li-hua [IAE, Suwon (Korea, Republic of). Plant Engineering Center

2013-07-01

One of the major operation obstacles in gasification process is ash deposition phenomenon. In this investigation, experiment was carried out to examine coal fouling characteristics using a laminar DTF (Drop Tube Furnace) with variation of operating condition such as different coal size, and probe surface temperature. Four different samples of pulverized coal were injected into DTF under various conditions. The ash particles are deposited on probe by impacting and agglomerating action. Fouling grains are made of eutectic compound, which is made by reacting with acid minerals and alkali minerals, in EPMA (Electron Probe Micro-Analysis). And agglomeration area of fouling at top layer is wide more than it of middle and bottom layer. The major mineral factors of fouling phenomenon are Fe, Ca, and Mg. The deposition quantity of fouling increases with increasing particle size, high alkali mineral (Fe, Ca, and Mg) contents, and ash deposition temperature.

2017 Report for New LANL Physical Vapor Deposition Capability

Energy Technology Data Exchange (ETDEWEB)

Roman, Audrey Rae [Los Alamos National Laboratory; Zhao, Xinxin [Los Alamos National Laboratory; Bond, Evelyn M. [Los Alamos National Laboratory; Gooden, Matthew Edgell [Los Alamos National Laboratory; Rundberg, Robert S. [Los Alamos National Laboratory; Bredeweg, Todd Allen [Los Alamos National Laboratory

2017-10-03

There is an urgent need at LANL to achieve uniform, thin film actinide targets that are essential for nuclear physics experiments. The target preparation work is currently performed externally by Professor Walter Loveland at Oregon State University, who has made various evaporated actinide targets such as Th and U for use on several nuclear physics measurements at LANSCE. We are developing a vapor deposition capability, with the goal of evaporating Th and U in the Actinide Research Facility (ARF) at TA-48. In the future we plan to expand this work to evaporating transuranic elements, such as Pu. The ARF is the optimal location for evaporating actinides because this lab is specifically dedicated to actinide research. There are numerous instruments in the ARF that can be used to provide detailed characterization of the evaporated thin films such as: Table top Scanning Electron Microscope, In-situ X-Ray Diffraction, and 3D Raman spectroscopy. These techniques have the ability to determine the uniformity, surface characterization, and composition of the deposits.

Metalorganic chemical vapor deposition of ZnO:N using NO as dopant

International Nuclear Information System (INIS)

Dangbegnon, J.K.; Talla, K.; Roro, K.T.; Botha, J.R.

2009-01-01

Highly c-axis orientated ZnO was grown by metal organic chemical vapor deposition (MOCVD) using NO as both oxidant and nitrogen dopant source. The properties of the deposited material are investigated by X-ray diffraction to study the crystalline quality of the thin films. Photoluminescence measurements are used to determine the optical properties of the material as a function of VI/II ratio and post growth-annealing temperature. Two transitions appear at 3.228 and 3.156 eV and are interpreted as involving active nitrogen acceptors. An increase in the NO flow increases the concentration of nitrogen in the films, which are activated by subsequent annealing at 600 deg. C in an oxygen ambient.

Metalorganic chemical vapor deposition of ZnO:N using NO as dopant

Energy Technology Data Exchange (ETDEWEB)

Dangbegnon, J.K., E-mail: JulienKouadio.Dangbegnon@nmmu.ac.z [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Talla, K.; Roro, K.T.; Botha, J.R. [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

2009-12-01

Highly c-axis orientated ZnO was grown by metal organic chemical vapor deposition (MOCVD) using NO as both oxidant and nitrogen dopant source. The properties of the deposited material are investigated by X-ray diffraction to study the crystalline quality of the thin films. Photoluminescence measurements are used to determine the optical properties of the material as a function of VI/II ratio and post growth-annealing temperature. Two transitions appear at 3.228 and 3.156 eV and are interpreted as involving active nitrogen acceptors. An increase in the NO flow increases the concentration of nitrogen in the films, which are activated by subsequent annealing at 600 deg. C in an oxygen ambient.

Influence of microstructure on hydrothermal corrosion of chemically vapor processed SiC composite tubes