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Sample records for vapor-deposited amorphous alloys

  1. Excessively High Vapor Pressure of Al-based Amorphous Alloys

    Directory of Open Access Journals (Sweden)

    Jae Im Jeong

    2015-10-01

    Full Text Available Aluminum-based amorphous alloys exhibited an abnormally high vapor pressure at their approximate glass transition temperatures. The vapor pressure was confirmed by the formation of Al nanocrystallites from condensation, which was attributed to weight loss of the amorphous alloys. The amount of weight loss varied with the amorphous alloy compositions and was inversely proportional to their glass-forming ability. The vapor pressure of the amorphous alloys around 573 K was close to the vapor pressure of crystalline Al near its melting temperature, 873 K. Our results strongly suggest the possibility of fabricating nanocrystallites or thin films by evaporation at low temperatures.

  2. Formation of amorphous metal alloys by chemical vapor deposition

    Science.gov (United States)

    Mullendore, A.W.

    1988-03-18

    Amorphous alloys are deposited by a process of thermal dissociation of mixtures of organometallic compounds and metalloid hydrides,e.g., transition metal carbonyl, such as nickel carbonyl and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit. 1 fig.

  3. Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films

    International Nuclear Information System (INIS)

    Shin Jinhong; Waheed, Abdul; Winkenwerder, Wyatt A.; Kim, Hyun-Woo; Agapiou, Kyriacos; Jones, Richard A.; Hwang, Gyeong S.; Ekerdt, John G.

    2007-01-01

    Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO 2 containing ∼ 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH 2 (PMe 3 ) 4 (Me = CH 3 ) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase

  4. Imparting passivity to vapor deposited magnesium alloys

    Science.gov (United States)

    Wolfe, Ryan C.

    Magnesium has the lowest density of all structural metals. Utilization of low density materials is advantageous from a design standpoint, because lower weight translates into improved performance of engineered products (i.e., notebook computers are more portable, vehicles achieve better gas mileage, and aircraft can carry more payload). Despite their low density and high strength to weight ratio, however, the widespread implementation of magnesium alloys is currently hindered by their relatively poor corrosion resistance. The objective of this research dissertation is to develop a scientific basis for the creation of a corrosion resistant magnesium alloy. The corrosion resistance of magnesium alloys is affected by several interrelated factors. Among these are alloying, microstructure, impurities, galvanic corrosion effects, and service conditions, among others. Alloying and modification of the microstructure are primary approaches to controlling corrosion. Furthermore, nonequilibrium alloying of magnesium via physical vapor deposition allows for the formation of single-phase magnesium alloys with supersaturated concentrations of passivity-enhancing elements. The microstructure and surface morphology is also modifiable during physical vapor deposition through the variation of evaporation power, pressure, temperature, ion bombardment, and the source-to-substrate distance. Aluminum, titanium, yttrium, and zirconium were initially chosen as candidates likely to impart passivity on vapor deposited magnesium alloys. Prior to this research, alloys of this type have never before been produced, much less studied. All of these metals were observed to afford some degree of corrosion resistance to magnesium. Due to the especially promising results from nonequilibrium alloying of magnesium with yttrium and titanium, the ternary magnesium-yttrium-titanium system was investigated in depth. While all of the alloys are lustrous, surface morphology is observed under the scanning

  5. A comparative chemical network study of HWCVD deposited amorphous silicon and carbon based alloys thin films

    Energy Technology Data Exchange (ETDEWEB)

    Swain, Bibhu P., E-mail: bibhuprasad.swain@gmail.com [Centre for Materials Science and Nanotechnology, Sikkim Manipal Institute of Technology, Majitar, Rangpo Sikkim (India); Swain, Bhabani S.; Hwang, Nong M. [Thin Films and Microstructure Laboratory, Department of Materials Science and Engineering, Seoul National University, Seoul (Korea, Republic of)

    2014-03-05

    Highlights: • a-SiC:H, a-SiN:H, a-C:H and a-SiCN:H films were deposited by hot wire chemical vapor deposition. • Evolution of microstructure of a-SiCN:H films deposited at different NH{sub 3} flow rate were analyzed. • The chemical network of Si and C based alloys were studied by FTIR and Raman spectroscopy. -- Abstract: Silicon and carbon based alloys were deposited by hot wire chemical vapor deposition (HWCVD). The microstructure and chemical bonding of these films were characterized by field emission scanning electron microscopy, Fourier transform infrared spectroscopy and Raman spectroscopy. The electron microscopy revealed various microstructures were observed for a-C:H, a-SiC:H, a-SiN:H, a-CN:H and a-SiCN:H films. The microstructure of SiN:H films showed agglomerate spherical grains while a-C:H films showed more fractal surface with branched microstructure. However, a-SiC:H, a-CN:H and a-SiCN:H indicated uniform but intermediate surface fractal microstructure. A series of a-SiCN:H films were deposited with variation of NH{sub 3} flow rate. The nitrogen incorporation in a-SiCN:H films alter the carbon network from sp{sup 2} to sp{sup 3} bonding The detail chemical bonding of amorphous films was analyzed by curve fitting method.

  6. Anisotropic phase separation through the metal-insulator transition in amorphous Mo-Ge and Fe-Ge alloys

    International Nuclear Information System (INIS)

    Regan, M.J.

    1993-12-01

    Since an amorphous solid is often defined as that which lacks long-range order, the atomic structure is typically characterized in terms of the high-degree of short-range order. Most descriptions of vapor-deposited amorphous alloys focus on characterizing this order, while assuming that the material is chemically homogeneous beyond a few near neighbors. By coupling traditional small-angle x-ray scattering which probes spatial variations of the electron density with anomalous dispersion which creates a species-specific contrast, one can discern cracks and voids from chemical inhomogeneity. In particular, one finds that the chemical inhomogeneities which have been previously reported in amorphous Fe x Ge 1-x and Mo x Ge 1-x are quite anisotropic, depending significantly on the direction of film growth. With the addition of small amounts of metal atoms (x 2 or MoGe 3 . Finally, by manipulating the deposited power flux and rates of growth, Fe x Ge 1-x films which have the same Fe composition x can be grown to different states of phase separation. These results may help explain the difficulty workers have had in isolating the metal/insulator transition for these and other vapor-deposited amorphous alloys

  7. Properties of amorphous silicon thin films synthesized by reactive particle beam assisted chemical vapor deposition

    International Nuclear Information System (INIS)

    Choi, Sun Gyu; Wang, Seok-Joo; Park, Hyeong-Ho; Jang, Jin-Nyoung; Hong, MunPyo; Kwon, Kwang-Ho; Park, Hyung-Ho

    2010-01-01

    Amorphous silicon thin films were formed by chemical vapor deposition of reactive particle beam assisted inductively coupled plasma type with various reflector bias voltages. During the deposition, the substrate was heated at 150 o C. The effects of reflector bias voltage on the physical and chemical properties of the films were systematically studied. X-ray diffraction and Raman spectroscopy results showed that the deposited films were amorphous and the films under higher reflector voltage had higher internal energy to be easily crystallized. The chemical state of amorphous silicon films was revealed as metallic bonding of Si atoms by using X-ray photoelectron spectroscopy. An increase in reflector voltage induced an increase of surface morphology of films and optical bandgap and a decrease of photoconductivity.

  8. Salt Fog Testing Iron-Based Amorphous Alloys

    International Nuclear Information System (INIS)

    Rebak, Raul B.; Aprigliano, Louis F.; Day, S. Daniel; Farmer, Joseph C.

    2007-01-01

    Iron-based amorphous alloys are hard and highly corrosion resistant, which make them desirable for salt water and other applications. These alloys can be produced as powder and can be deposited as coatings on any surface that needs to be protected from the environment. It was of interest to examine the behavior of these amorphous alloys in the standard salt-fog testing ASTM B 117. Three different amorphous coating compositions were deposited on 316L SS coupons and exposed for many cycles of the salt fog test. Other common engineering alloys such as 1018 carbon steel, 316L SS and Hastelloy C-22 were also tested together with the amorphous coatings. Results show that amorphous coatings are resistant to rusting in salt fog. Partial devitrification may be responsible for isolated rust spots in one of the coatings. (authors)

  9. Development of Amorphous Filler Alloys for the Joining of Nuclear Materials

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jai Young; Kim, Dong Myong; Kang, Yoon Sun; Jung, Jae Han; Yu, Ji Sang; Kim, Hae Yeol; Lee, Ho [Korea Advanced Institute of Science and Technology, Taejon (Korea, Republic of)

    1997-08-01

    In the case of advanced CANDU fuel being useful in future, the fabrication processes for soundness insurance of a improved nuclear fuel bundle must be developed at the same time because it have three times combustibility as existing fuel. In particular, as the improved nuclear fuel bundle in which a coated layer thickness is thinner than existing that, firmity of a joint part is very important. Therefore, we need to develop a joint technique using new solder which can settle a potential problem in current joining method. As the Zr-Be alloy system is composed with the elements having high neutron permeability, they are suitable for joint of nuclear fuel pack. The various compositions Zr-Be binary metallic glass alloys were applicable to the joining the nuclear fuel bundles. The thickness of joint layer using the Zr{sub 1}-{sub x}Be{sub x} amorphous ribbon as a solder is thinner than that using physical vapor deposited Be. Among the Zr{sub 1}-{sub x}Be{sub x} amorphous binary alloys, Zr{sub 0}.7Be-0.3 binary alloy is the most appropriate for joint of nuclear fuel bundle because its joint layer is smooth and thin due to low degree of Be diffusion. In the case of the Zr{sub (}0.7-y)Ti{sub y}Be{sub 0}.3 and Zr{sub (}0.7-y)Nb{sub y}Be{sub 0}3 ternary amorphous alloys, the crystallization temperature(T{sub x}) and activation energy(E{sub x}) increase as the contents of Nb and Ti increase respectively. In the aspect of thermal stability, the ternary amorphous alloys are superior than Zr-Be binary amorphous alloys and Zr-Ti-Be amorphous alloy is superior than Zr-Nb-Be amorphous alloy. 12 refs., 5 tabs., 25 figs. (author)

  10. Development of amorphous silicon based EUV hardmasks through physical vapor deposition

    Science.gov (United States)

    De Silva, Anuja; Mignot, Yann; Meli, Luciana; DeVries, Scott; Xu, Yongan; Seshadri, Indira; Felix, Nelson M.; Zeng, Wilson; Cao, Yong; Phan, Khoi; Dai, Huixiong; Ngai, Christopher S.; Stolfi, Michael; Diehl, Daniel L.

    2017-10-01

    Extending extreme ultraviolet (EUV) single exposure patterning to its limits requires more than photoresist development. The hardmask film is a key contributor in the patterning stack that offers opportunities to enhance lithographic process window, increase pattern transfer efficiency, and decrease defectivity when utilizing very thin film stacks. This paper introduces the development of amorphous silicon (a-Si) deposited through physical vapor deposited (PVD) as an alternative to a silicon ARC (SiARC) or silicon-oxide-type EUV hardmasks in a typical trilayer patterning scheme. PVD offers benefits such as lower deposition temperature, and higher purity, compared to conventional chemical vapor deposition (CVD) techniques. In this work, sub-36nm pitch line-space features were resolved with a positive-tone organic chemically-amplified resist directly patterned on PVD a-Si, without an adhesion promotion layer and without pattern collapse. Pattern transfer into the underlying hardmask stack was demonstrated, allowing an evaluation of patterning metrics related to resolution, pattern transfer fidelity, and film defectivity for PVD a-Si compared to a conventional tri-layer patterning scheme. Etch selectivity and the scalability of PVD a-Si to reduce the aspect ratio of the patterning stack will also be discussed.

  11. Formation of apatite on hydrogenated amorphous silicon (a-Si:H) film deposited by plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Liu Xuanyong; Chu, Paul K.; Ding Chuanxian

    2007-01-01

    Hydrogenated amorphous silicon films were fabricated on p-type, 100 mm diameter silicon wafers by plasma-enhanced chemical vapor deposition (PECVD) using silane and hydrogen. The structure and composition of the hydrogenated amorphous silicon films were investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy (XTEM). The hydrogenated amorphous silicon films were subsequently soaked in simulated body fluids to evaluate apatite formation. Carbonate-containing hydroxyapatite (bone-like apatite) was formed on the surface suggesting good bone conductivity. The amorphous structure and presence of surface Si-H bonds are believed to induce apatite formation on the surface of the hydrogenated amorphous silicon film. A good understanding of the surface bioactivity of silicon-based materials and means to produce a bioactive surface is important to the development of silicon-based biosensors and micro-devices that are implanted inside humans

  12. Formation of apatite on hydrogenated amorphous silicon (a-Si:H) film deposited by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liu Xuanyong [Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China) and Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)]. E-mail: xyliu@mail.sic.ac.cn; Chu, Paul K. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)]. E-mail: paul.chu@cityu.edu.hk; Ding Chuanxian [Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)

    2007-01-15

    Hydrogenated amorphous silicon films were fabricated on p-type, 100 mm diameter <1 0 0> silicon wafers by plasma-enhanced chemical vapor deposition (PECVD) using silane and hydrogen. The structure and composition of the hydrogenated amorphous silicon films were investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy (XTEM). The hydrogenated amorphous silicon films were subsequently soaked in simulated body fluids to evaluate apatite formation. Carbonate-containing hydroxyapatite (bone-like apatite) was formed on the surface suggesting good bone conductivity. The amorphous structure and presence of surface Si-H bonds are believed to induce apatite formation on the surface of the hydrogenated amorphous silicon film. A good understanding of the surface bioactivity of silicon-based materials and means to produce a bioactive surface is important to the development of silicon-based biosensors and micro-devices that are implanted inside humans.

  13. Formation of carbon nanotubes on an amorphous Ni{sub 25}Ta{sub 58}N{sub 17} alloy film by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gromov, D. G.; Dubkov, S. V., E-mail: sv.dubkov@gmail.com [National Research University of Electronic Technology MIET (Russian Federation); Pavlov, A. A. [Russian Academy of Sciences, Institute of Nanotechnologies of Microelectronics (Russian Federation); Skorik, S. N. [Technological Center Research and Production Complex (Russian Federation); Trifonov, A. Yu. [Lukin Scientific Research Institute of Physical Problems (Russian Federation); Kirilenko, E. P.; Shulyat’ev, A. S. [National Research University of Electronic Technology MIET (Russian Federation); Shaman, Yu. P. [Technological Center Research and Production Complex (Russian Federation); Rygalin, B. N. [National Research University of Electronic Technology MIET (Russian Federation)

    2016-12-15

    It is shown that it is possible to grow carbon nanotubes on the surface of an amorphous Ni–Ta–N metal alloy film with a low Ni content (~25 at %) by chemical deposition from acetylene at temperature 400–800°C. It is established that the addition of nitrogen into the Ni–Ta alloy composition is favorable for the formation of tantalum nitride and the expulsion of Ni clusters, which act as a catalyst of the growth of carbon nanotubes, onto the surface. From Raman spectroscopy studies, it is found that, as the temperature of synthesis is raised, the quality of nanotubes is improved.

  14. Cu-Al alloy formation by thermal annealing of Cu/Al multilayer films deposited by cyclic metal organic chemical vapor deposition

    Science.gov (United States)

    Moon, Hock Key; Yoon, Jaehong; Kim, Hyungjun; Lee, Nae-Eung

    2013-05-01

    One of the most important issues in future Cu-based interconnects is to suppress the resistivity increase in the Cu interconnect line while decreasing the line width below 30 nm. For the purpose of mitigating the resistivity increase in the nanoscale Cu line, alloying Cu with traces of other elements is investigated. The formation of a Cu alloy layer using chemical vapor deposition or electroplating has been rarely studied because of the difficulty in forming Cu alloys with elements such as Al. In this work, Cu-Al alloy films were successfully formed after thermal annealing of Cu/Al multilayers deposited by cyclic metal-organic chemical vapor deposition (C-MOCVD). After the C-MOCVD of Cu/Al multilayers without gas phase reaction between the Cu and Al precursors in the reactor, thermal annealing was used to form Cu-Al alloy films with a small Al content fraction. The resistivity of the alloy films was dependent on the Al precursor delivery time and was lower than that of the aluminum-free Cu film. No presence of intermetallic compounds were detected in the alloy films by X-ray diffraction measurements and transmission electron spectroscopy.

  15. Ultras-stable Physical Vapor Deposited Amorphous Teflon Films with Extreme Fictive Temperature Reduction

    Science.gov (United States)

    McKenna, Gregory; Yoon, Heedong; Koh, Yung; Simon, Sindee

    In the present work, we have produced highly stable amorphous fluoropolymer (Teflon AF® 1600) films to study the calorimetric and relaxation behavior in the deep in the glassy regime. Physical vapor deposition (PVD) was used to produce 110 to 700 nm PVD films with substrate temperature ranging from 0.70 Tg to 0.90 Tg. Fictive temperature (Tf) was measured using Flash DSC with 600 K/s heating and cooling rates. Consistent with prior observations for small molecular weight glasses, large enthalpy overshoots were observed in the stable amorphous Teflon films. The Tf reduction for the stable Teflon films deposited in the vicinity of 0.85 Tg was approximately 70 K compared to the Tgof the rejuvenated system. The relaxation behavior of stable Teflon films was measured using the TTU bubble inflation technique and following Struik's protocol in the temperature range from Tf to Tg. The results show that the relaxation time decreases with increasing aging time implying that devitrification is occurring in this regime.

  16. Iron-based amorphous alloys and methods of synthesizing iron-based amorphous alloys

    Science.gov (United States)

    Saw, Cheng Kiong; Bauer, William A.; Choi, Jor-Shan; Day, Dan; Farmer, Joseph C.

    2016-05-03

    A method according to one embodiment includes combining an amorphous iron-based alloy and at least one metal selected from a group consisting of molybdenum, chromium, tungsten, boron, gadolinium, nickel phosphorous, yttrium, and alloys thereof to form a mixture, wherein the at least one metal is present in the mixture from about 5 atomic percent (at %) to about 55 at %; and ball milling the mixture at least until an amorphous alloy of the iron-based alloy and the at least one metal is formed. Several amorphous iron-based metal alloys are also presented, including corrosion-resistant amorphous iron-based metal alloys and radiation-shielding amorphous iron-based metal alloys.

  17. Perspective: Highly stable vapor-deposited glasses

    Science.gov (United States)

    Ediger, M. D.

    2017-12-01

    This article describes recent progress in understanding highly stable glasses prepared by physical vapor deposition and provides perspective on further research directions for the field. For a given molecule, vapor-deposited glasses can have higher density and lower enthalpy than any glass that can be prepared by the more traditional route of cooling a liquid, and such glasses also exhibit greatly enhanced kinetic stability. Because vapor-deposited glasses can approach the bottom of the amorphous part of the potential energy landscape, they provide insights into the properties expected for the "ideal glass." Connections between vapor-deposited glasses, liquid-cooled glasses, and deeply supercooled liquids are explored. The generality of stable glass formation for organic molecules is discussed along with the prospects for stable glasses of other types of materials.

  18. Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

    Science.gov (United States)

    Ji, Xiaoyu; Cheng, Hiu Yan; Grede, Alex J.; Molina, Alex; Talreja, Disha; Mohney, Suzanne E.; Giebink, Noel C.; Badding, John V.; Gopalan, Venkatraman

    2018-04-01

    Conformally coating textured, high surface area substrates with high quality semiconductors is challenging. Here, we show that a high pressure chemical vapor deposition process can be employed to conformally coat the individual fibers of several types of flexible fabrics (cotton, carbon, steel) with electronically or optoelectronically active materials. The high pressure (˜30 MPa) significantly increases the deposition rate at low temperatures. As a result, it becomes possible to deposit technologically important hydrogenated amorphous silicon (a-Si:H) from silane by a simple and very practical pyrolysis process without the use of plasma, photochemical, hot-wire, or other forms of activation. By confining gas phase reactions in microscale reactors, we show that the formation of undesired particles is inhibited within the microscale spaces between the individual wires in the fabric structures. Such a conformal coating approach enables the direct fabrication of hydrogenated amorphous silicon-based Schottky junction devices on a stainless steel fabric functioning as a solar fabric.

  19. Corrosion-resistant amorphous metallic films of Mo49Cr33B18 alloy

    Science.gov (United States)

    Ramesham, R.; Distefano, S.; Fitzgerald, D.; Thakoor, A. P.; Khanna, S. K.

    1987-01-01

    Corrosion-resistant amorphous metallic alloy films of Mo49Cr33B18 with a crystallization temperature of 590 C were deposited onto glass and quartz substrates by magnetron sputter-quench technique. The amorphous nature of the films was confirmed by their diffuse X-ray diffraction patterns. The deposited films are densely packed (zone T) and exhibit low stress and good adhesion to the substrate. Corrosion current of as-deposited coating of MoCrB amorphous metallic alloy is approximately three orders of magnitude less than the corrosion current of 304 stainless steel in 1N H2SO4 solution.

  20. Communication: Disorder-suppressed vibrational relaxation in vapor-deposited high-density amorphous ice

    Science.gov (United States)

    Shalit, Andrey; Perakis, Fivos; Hamm, Peter

    2014-04-01

    We apply two-dimensional infrared spectroscopy to differentiate between the two polyamorphous forms of glassy water, low-density (LDA) and high-density (HDA) amorphous ices, that were obtained by slow vapor deposition at 80 and 11 K, respectively. Both the vibrational lifetime and the bandwidth of the 1-2 transition of the isolated OD stretch vibration of HDO in H2O exhibit characteristic differences when comparing hexagonal (Ih), LDA, and HDA ices, which we attribute to the different local structures - in particular the presence of interstitial waters in HDA ice - that cause different delocalization lengths of intermolecular phonon degrees of freedom. Moreover, temperature dependent measurements show that the vibrational lifetime closely follows the structural transition between HDA and LDA phases.

  1. Effects of heat treatment on the microstructure of amorphous boron carbide coating deposited on graphite substrates by chemical vapor deposition

    International Nuclear Information System (INIS)

    Li Siwei; Zeng Bin; Feng Zude; Liu Yongsheng; Yang Wenbin; Cheng Laifei; Zhang Litong

    2010-01-01

    A two-layer boron carbide coating is deposited on a graphite substrate by chemical vapor deposition from a CH 4 /BCl 3 /H 2 precursor mixture at a low temperature of 950 o C and a reduced pressure of 10 KPa. Coated substrates are annealed at 1600 o C, 1700 o C, 1800 o C, 1900 o C and 2000 o C in high purity argon for 2 h, respectively. Structural evolution of the coatings is explored by electron microscopy and spectroscopy. Results demonstrate that the as-deposited coating is composed of pyrolytic carbon and amorphous boron carbide. A composition gradient of B and C is induced in each deposition. After annealing, B 4 C crystallites precipitate out of the amorphous boron carbide and grow to several hundreds nanometers by receiving B and C from boron-doped pyrolytic carbon. Energy-dispersive spectroscopy proves that the crystallization is controlled by element diffusion activated by high temperature annealing, after that a larger concentration gradient of B and C is induced in the coating. Quantified Raman spectrum identifies a graphitization enhancement of pyrolytic carbon. Transmission electron microscopy exhibits an epitaxial growth of B 4 C at layer/layer interface of the annealed coatings. Mechanism concerning the structural evolution on the basis of the experimental results is proposed.

  2. Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gencarelli, F., E-mail: federica.gencarelli@imec.be [imec, Kapeldreef 75, 3001 Leuven (Belgium); Dept. of Metallurgy and Materials Engineering, KU Leuven, B-3001 Leuven (Belgium); Shimura, Y. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Kumar, A. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Vincent, B.; Moussa, A.; Vanhaeren, D.; Richard, O.; Bender, H. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, W. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Caymax, M.; Loo, R. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Heyns, M. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Dept. of Metallurgy and Materials Engineering, KU Leuven, B-3001 Leuven (Belgium)

    2015-09-01

    In this work, we discuss the characteristics of particular island-type features with an amorphous core that are developed during the low temperature epitaxial growth of Ge and GeSn layers by means of chemical vapor deposition with Ge{sub 2}H{sub 6}. Although further investigations are needed to unambiguously identify the origin of these features, we suggest that they are originated by the formation of clusters of H and/or contaminants atoms during growth. These would initially cause the formation of pits with crystalline rough facets over them, resulting in ring-shaped islands. Then, when an excess surface energy is overcome, an amorphous phase would nucleate inside the pits and fill them. Reducing the pressure and/or increasing the growth temperature can be effective ways to prevent the formation of these features, likely due to a reduction of the surface passivation from H and/or contaminant atoms. - Highlights: • Island features with amorphous cores develop during low T Ge(Sn) CVD with Ge{sub 2}H{sub 6.} • These features are thoroughly characterized in order to understand their origin. • A model is proposed to describe the possible evolution of these features. • Lower pressures and/or higher temperatures avoid the formation of these features.

  3. Positrons in amorphous alloys

    International Nuclear Information System (INIS)

    Moser, Pierre.

    1981-07-01

    Positron annihilation techniques give interesting informations about ''empty spaces'' in amorphous alloys. The results of an extensive research work on the properties of either pre-existing or irradiation induced ''empty spaces'' in four amorphous alloys are presented. The pre-existing empty spaces appear to be small vacancy-like defects. The irradiation induced defects are ''close pairs'' with widely distributed configurations. There is a strong interaction between vacancy like and interstitial like components. A model is proposed, which explains the radiation resistance mechanism of the amorphous alloys. An extensive joint research work to study four amorphous alloys, Fe 80 B 20 ,Fe 40 Ni 40 P 14 B 6 , Cu 50 Ti 50 , Pd 80 Si 20 , is summarized

  4. Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Oliveira, M. H.; Viana, G. A.; de Lima, M. M.; Cros, A.; Cantarero, A.; Marques, F. C.

    2010-12-01

    Hydrogenated amorphous carbon (a-C:H) films were prepared by plasma enhanced chemical vapor deposition using methane (CH4) plus krypton (Kr) mixed atmosphere. The depositions were performed as function of the bias voltage and krypton partial pressure. The goal of this work was to study the influence of krypton gas on the physical properties of a-C:H films deposited on the cathode electrode. Krypton concentration up to 1.6 at. %, determined by Rutherford Back-Scattering, was obtained at high Kr partial pressure and bias of -120 V. The structure of the films was analyzed by means of optical transmission spectroscopy, multi-wavelength Raman scattering and Fourier Transform Infrared spectroscopy. It was verified that the structure of the films remains unchanged up to a concentration of Kr of about 1.0 at. %. A slight graphitization of the films occurs for higher concentration. The observed variation in the film structure, optical band gap, stress, and hydrogen concentration were associated mainly with the subplantation process of hydrocarbons radicals, rather than the krypton ion energy.

  5. Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Oliveira, M. H. Jr.; Viana, G. A.; Marques, F. C.; Lima, M. M. Jr. de; Cros, A.; Cantarero, A.

    2010-01-01

    Hydrogenated amorphous carbon (a-C:H) films were prepared by plasma enhanced chemical vapor deposition using methane (CH 4 ) plus krypton (Kr) mixed atmosphere. The depositions were performed as function of the bias voltage and krypton partial pressure. The goal of this work was to study the influence of krypton gas on the physical properties of a-C:H films deposited on the cathode electrode. Krypton concentration up to 1.6 at. %, determined by Rutherford Back-Scattering, was obtained at high Kr partial pressure and bias of -120 V. The structure of the films was analyzed by means of optical transmission spectroscopy, multi-wavelength Raman scattering and Fourier Transform Infrared spectroscopy. It was verified that the structure of the films remains unchanged up to a concentration of Kr of about 1.0 at. %. A slight graphitization of the films occurs for higher concentration. The observed variation in the film structure, optical band gap, stress, and hydrogen concentration were associated mainly with the subplantation process of hydrocarbons radicals, rather than the krypton ion energy.

  6. Crystallization characteristics of amorphous alloys of FeZr

    International Nuclear Information System (INIS)

    Rozhan, M. Idrus; Grundy, P.J.

    1993-01-01

    The crystallization characteristics of sputter-deposited amorphous alloys of Fe 100-x Zr x prepared at zirconium concentrations between 9 and 89 at.% was investigated. The transformation of the alloys from the amorphous to the crystalline state has been examined by thermal analysis, electrical resistance and X-ray diffraction. The crystallization temperatures were determined by differential scanning calorimetry (DSC) and electrical resistance as a function of temperature. The final phases were determined by X-ray diffraction. The activation energies were calculated from the Kissinger plots and the heats of crystallization were calculated and correlations between the thermal analysis and the resistance results are presented

  7. Effect Of Low-Temperature Annealing On The Properties Of Ni-P Amorphous Alloys Deposited Via Electroless Plating

    Directory of Open Access Journals (Sweden)

    Zhao Guanlin

    2015-06-01

    Full Text Available Amorphous Ni-P alloys were prepared via electroless plating and annealing at 200°C at different times to obtain different microstructures. The effects of low-temperature annealing on the properties of amorphous Ni-P alloys were studied. The local atomic structure of the annealed amorphous Ni-P alloys was analyzed by calculating the atomic pair distribution function from their X-ray diffraction patterns. The results indicate that the properties of the annealed amorphous Ni-P alloys are closely related to the order atomic cluster size. However, these annealed Ni-P alloys maintained their amorphous structure at different annealing times. The variation in microhardness is in agreement with the change in cluster size. By contrast, the corrosion resistance of the annealed alloys in 3.5 wt% NaCl solution increases with the decrease in order cluster size.

  8. Amorphous Terfenol-D films using nanosecond pulsed laser deposition

    International Nuclear Information System (INIS)

    Ma, James; O'Brien, Daniel T.; Kovar, Desiderio

    2009-01-01

    Thin films of Terfenol-D were produced by nanosecond pulsed laser deposition (PLD) at two fluences. Electron dispersive spectroscopy conducted using scanning electron and transmission electron microscopes showed that the film compositions were similar to that of the PLD target. Contrary to previous assertions that suggested that nanosecond PLD results in crystalline films, X-ray diffraction and transmission electron microscopy analysis showed that the films produced at both fluences were amorphous. Splatters present on the film had similar compositions to the overall film and were also amorphous. Magnetic measurements showed that the films had high saturation magnetization and magnetostriction, similar to high quality films produced using other physical vapor deposition methods.

  9. Corrosion processes of physical vapor deposition-coated metallic implants.

    Science.gov (United States)

    Antunes, Renato Altobelli; de Oliveira, Mara Cristina Lopes

    2009-01-01

    Protecting metallic implants from the harsh environment of physiological fluids is essential to guaranteeing successful long-term use in a patient's body. Chemical degradation may lead to the failure of an implant device in two different ways. First, metal ions may cause inflammatory reactions in the tissues surrounding the implant and, in extreme cases, these reactions may inflict acute pain on the patient and lead to loosening of the device. Therefore, increasing wear strength is beneficial to the performance of the metallic implant. Second, localized corrosion processes contribute to the nucleation of fatigue cracks, and corrosion fatigue is the main reason for the mechanical failure of metallic implants. Common biomedical alloys such as stainless steel, cobalt-chrome alloys, and titanium alloys are prone to at least one of these problems. Vapor-deposited hard coatings act directly to improve corrosion, wear, and fatigue resistances of metallic materials. The effectiveness of the corrosion protection is strongly related to the structure of the physical vapor deposition layer. The aim of this paper is to present a comprehensive review of the correlation between the structure of physical vapor deposition layers and the corrosion properties of metallic implants.

  10. Molecular dynamics simulation of chemical vapor deposition of amorphous carbon. Dependence on H/C ratio of source gas

    International Nuclear Information System (INIS)

    Ito, Atsushi M.; Takayama, Arimichi; Nakamura, Hiroaki; Saito, Seiki; Ohno, Noriyasu; Kajita, Shin

    2011-01-01

    By molecular dynamics simulation, the chemical vapor deposition of amorphous carbon onto graphite and diamond surfaces was studied. In particular, we investigated the effect of source H/C ratio, which is the ratio of the number of hydrogen atoms to the number of carbon atoms in a source gas, on the deposition process. In the present simulation, the following two source gas conditions were tested: one was that the source gas was injected as isolated carbon and hydrogen atoms, and the other was that the source gas was injected as hydrocarbon molecules. Under the former condition, we found that as the source H/C ratio increases, the deposition rate of carbon atoms decreases exponentially. This exponential decrease in the deposition rate with increasing source H/C ratio agrees with experimental data. However, under the latter molecular source condition, the deposition rate did not decrease exponentially because of a chemical reaction peculiar to the type of hydrocarbon in the source gas. (author)

  11. Structural properties of nitrogenated amorphous carbon films: Influence of deposition temperature and radiofrequency discharge power

    International Nuclear Information System (INIS)

    Lazar, G.; Bouchet-Fabre, B.; Zellama, K.; Clin, M.; Ballutaud, D.; Godet, C.

    2008-01-01

    The structural properties of nitrogenated amorphous carbon deposited by radiofrequency magnetron sputtering of graphite in pure N 2 plasma are investigated as a function of the substrate temperature and radiofrequency discharge power. The film composition is derived from x-ray photoemission spectroscopy, nuclear reaction analysis and elastic recoil detection measurements and the film microstructure is discussed using infrared, Raman, x-ray photoemission and near edge x-ray absorption fine structure spectroscopic results. At low deposition temperature and low radiofrequency power, the films are soft, porous, and easily contaminated with water vapor and other atmospheric components. The concentration of nitrogen in the films is very large for low deposition temperatures (∼33.6 at. % N at 150 deg. C) but decreases strongly when the synthesis temperature increases (∼15 at. % N at 450 deg. C). With increasing deposition temperature and discharge power values, the main observed effects in amorphous carbon nitride alloys are a loss of nitrogen atoms, a smaller hydrogen and oxygen contamination related to the film densification, an increased order of the aromatic sp 2 phase, and a strong change in the nitrogen distribution within the carbon matrix. Structural changes are well correlated with modifications of the optical and transport properties

  12. High performance emitter for thermionic diode obtained by chemical vapor deposition

    International Nuclear Information System (INIS)

    Faron, R.; Bargues, M.; Durand, J.P.; Gillardeau, J.

    1973-01-01

    Vapor deposition process conditions presently known for tungsten and molybdenum (specifically the range of high temperatures and low pressures) permit the achievement of high performance thermionic emitters when used with an appropriate technology. One example of this uses the following series of successive vapor deposits, the five last vapor deposits constituting the fabrication of the emitting layer: Mo deposit for the formation of the nuclear fuel mechanical support; Mo deposit, which constitutes the sheath of the nuclear fuel; epitaxed Mo--W alloy deposit; epitaxed tungsten deposit; fine-grained tungsten deposit; and tungsten deposit with surface orientation according to plane (110)W. In accordance with vapor deposition techniques previously developed, such a sequence of deposits can easily be achieved with the same equipment, even without having to take out the part during the course of the process. (U.S.)

  13. Amorphous magnetism in Mnx Sn1-x alloys

    International Nuclear Information System (INIS)

    Drago, V.; Saitovitch, E.M.B.; Abd-Elmeguid, M.M.

    1988-01-01

    Systematic low temperature in situ 119 Sn Moessbauer effect (ME) studies in vapor quenched amorphous Mn x Sn 1-x (0.09≤ x ≤0,95) alloys between 150 and 4.2 K, are presented. Its is shown that the magnetic behavior of the system is correctly displayed by the transferred magnetic hyperfine (hf) interactions, at the 119 Sn site. A complete magnetic phase diagram is proposed, and the effect of an external magnetic field (up to about 3T) on the spin correlations in the spin-glass state is also discussed. (author) [pt

  14. Copper-Silver Alloy Depositions Using Thermionic Vacuum ARC (TVA)

    International Nuclear Information System (INIS)

    Akan, T.

    2004-01-01

    TVA is a plasma source generating pure metal vapor plasma and consists of a heated cathode emitting thermo electrons and an anode containing material to be evaporated. We used Cu and Ag pieces as anode materials and produced their alloys by electron bombarding. Cu-Ag alloys in various mass ratios were prepared by using the TVA and the TVA discharges were generated in the vapors of these alloys. The volt-ampere characteristics of the TVA discharges generated in the vapors of these alloys were investigated with respect to the ratio of Ag in the Cu-Ag alloy. Cu-Ag alloy thin films with various mass ratios were deposited onto the glass substrates by using their TVA discharges. The ratios of Cu and Ag in the thin Cu-Ag alloy films were found using scanning electron microscope-energy dispersive xray (SEM-EDX) microanalyses

  15. Anodic electrochemical treatment of amorphous alloys

    International Nuclear Information System (INIS)

    Isaev, N.I.; Yakovlev, V.B.; Osipov, Eh.K.; Isaev, A.V.; Trofimova, E.A.; Vasil'ev, V.Yu.

    1983-01-01

    The aim of the investigation is to reveal peculiarities of the process of anodic oxidation and properties of anode oxide films, formed on the surface of amorphous alloys. Amorphous alloys on the base of rectifying metals of Zr-Ni, Zr-Cu-Ni, Zr-Al-Ni, Zr-Cu-Sn, Zr-Al, Zr-Mo systems are studied. Electrolytes which do not dissolve or weakly dissolve oxide film, such as boric acid electrolyte (40-45 g/l H 3 BO 3 and 18 cm 3 /l of the 25% aqueous NH 4 OH solution) and 20% H 2 SO 4 solution, are used for oxidation. Results of investigations, carried out on amorphous alloys, contaning noticeable quantities of non-rectifying components - Cu, Ni, Sn, Fe, Mo etc - have shown that non-rectifying components harden a process of anodic oxidation and decrease the current efficiency. Amorphous alloys, containing only rectifying components are oxidated in anodic way, the regularities of film growth being similar to those obtained for crystalline materials

  16. Corrosion resistance and cytocompatibility of biodegradable surgical magnesium alloy coated with hydrogenated amorphous silicon.

    Science.gov (United States)

    Xin, Yunchang; Jiang, Jiang; Huo, Kaifu; Tang, Guoyi; Tian, Xiubo; Chu, Paul K

    2009-06-01

    The fast degradation rates in the physiological environment constitute the main limitation for the applications of surgical magnesium alloys as biodegradable hard-tissue implants. In this work, a stable and dense hydrogenated amorphous silicon coating (a-Si:H) with desirable bioactivity is deposited on AZ91 magnesium alloy using magnetron sputtering deposition. Raman spectroscopy and Fourier transform infrared spectroscopy reveal that the coating is mainly composed of hydrogenated amorphous silicon. The hardness of the coated alloy is enhanced significantly and the coating is quite hydrophilic as well. Potentiodynamic polarization results show that the corrosion resistance of the coated alloy is enhanced dramatically. In addition, the deterioration process of the coating in simulated body fluids is systematically investigated by open circuit potential evolution and electrochemical impedance spectroscopy. The cytocompatibility of the coated Mg is evaluated for the first time using hFOB1.19 cells and favorable biocompatibility is observed. 2008 Wiley Periodicals, Inc.

  17. Influence of Molecular Shape on Molecular Orientation and Stability of Vapor-Deposited Organic Semiconductors

    Science.gov (United States)

    Walters, Diane M.; Johnson, Noah D.; Ediger, M. D.

    Physical vapor deposition is commonly used to prepare active layers in organic electronics. Recently, it has been shown that molecular orientation and packing can be tuned by changing the substrate temperature during deposition, while still producing macroscopically homogeneous films. These amorphous materials can be highly anisotropic when prepared with low substrate temperatures, and they can exhibit exceptional kinetic stability; films retain their favorable packing when heated to high temperatures. Here, we study the influence of molecular shape on molecular orientation and stability. We investigate disc-shaped molecules, such as TCTA and m-MTDATA, nearly spherical molecules, such as Alq3, and linear molecules covering a broad range of aspect ratios, such as p-TTP and BSB-Cz. Disc-shaped molecules have preferential horizontal orientation when deposited at low substrate temperatures, and their orientation can be tuned by changing the substrate temperature. Alq3 forms stable, amorphous films that are optically isotropic when vapor deposited over a broad range of substrate temperatures. This work may guide the choice of material and deposition conditions for vapor-deposited films used in organic electronics and allow for more efficient devices to be fabricated.

  18. Formation and structure of V-Zr amorphous alloy thin films

    KAUST Repository

    King, Daniel J M

    2015-01-01

    Although the equilibrium phase diagram predicts that alloys in the central part of the V-Zr system should consist of V2Zr Laves phase with partial segregation of one element, it is known that under non-equilibrium conditions these materials can form amorphous structures. Here we examine the structures and stabilities of thin film V-Zr alloys deposited at room temperature by magnetron sputtering. The films were characterized by X-ray diffraction, transmission electron microscopy and computational methods. Atomic-scale modelling was used to investigate the enthalpies of formation of the various competing structures. The calculations confirmed that an amorphous solid solution would be significantly more stable than a random body-centred solid solution of the elements, in agreement with the experimental results. In addition, the modelling effort provided insight into the probable atomic configurations of the amorphous structures allowing predictions of the average distance to the first and second nearest neighbours in the system.

  19. Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys

    International Nuclear Information System (INIS)

    Hart, John; Hazbun, Ramsey; Eldridge, David; Hickey, Ryan; Fernando, Nalin; Adam, Thomas; Zollner, Stefan; Kolodzey, James

    2016-01-01

    Tetrasilane and digermane were used to grow epitaxial silicon germanium layers on silicon substrates in a commercial ultra-high vacuum chemical vapor deposition tool. Films with concentrations up to 19% germanium were grown at temperatures from 400 °C to 550 °C. For all alloy compositions, the growth rates were much higher compared to using mono-silane and mono-germane. The quality of the material was assessed using X-ray diffraction, atomic force microscopy, and spectroscopic ellipsometry; all indicating high quality epitaxial films with low surface roughness suitable for commercial applications. Studies of the decomposition kinetics with regard to temperature were performed, revealing an unusual growth rate maximum between the high and low temperature deposition regimes. - Highlights: • Higher order precursors tetrasilane and digermane • Low temperature deposition • Thorough film characterization with temperature • Arrhenius growth rate peak

  20. Spectroscopic properties of nitrogen doped hydrogenated amorphous carbon films grown by radio frequency plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Hayashi, Y.; Yu, G.; Rahman, M. M.; Krishna, K. M.; Soga, T.; Jimbo, T.; Umeno, M.

    2001-01-01

    Nitrogen doped hydrogenated amorphous carbon thin films have been deposited by rf plasma-enhanced chemical vapor deposition using CH 4 as the source of carbon and with different nitrogen flow rates (N 2 /CH 4 gas ratios between 0 and 3), at 300 K. The dependence modifications of the optical and the structural properties on nitrogen incorporation were investigated using different spectroscopic techniques, such as, Raman spectroscopy, Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy, ultraviolet-visible (UV-VIS) spectroscopy, electron spin resonance (ESR), photoluminescence (PL) and spectroscopic ellipsometry (SE). Raman spectroscopy and IR absorption reveal an increase in sp 2 -bonded carbon or a change in sp 2 domain size with increasing nitrogen flow rate. It is found that the configuration of nitrogen atoms incorporated into an amorphous carbon network gradually changes from nitrogen atoms surrounded by three (σ bonded) to two (π bonded) neighboring carbons with increasing nitrogen flow rate. Tauc optical gap is reduced from 2.6 to 2.0 eV, and the ESR spin density and the peak-to-peak linewidth increase sharply with increasing nitrogen flow rate. Excellent agreement has been found between the measured SE data and modeled spectra, in which an empirical dielectric function of amorphous materials and a linear void distribution along the thickness have been assumed. The influence of nitrogen on the electronic density of states is explained based on the optical properties measured by UV-VIS and PL including nitrogen lone pair band. [copyright] 2001 American Institute of Physics

  1. Transformation processes during annealing of Al-amorphous alloys

    International Nuclear Information System (INIS)

    Petrescu, N.; Petrescu, M.; Calin, M.; Jianu, A.D.; Fecioru, M.

    1993-01-01

    As the amorphous aluminum alloys represent the newest achievement in rapid solidification of Al-based high strength heat resistent materials, a study was undertaken on the amorphous alloys in the Al-RE-TM system, the rare-earth metal being a lanthanide mixture and the transition metal a Ni-Fe substitution in definite proportions. The decomposition on heating of the most highly alloyed amorphous alloy in the investigated series is characterized by differential thermal analysis, electron microscopy and X-ray diffraction. (orig.)

  2. Transformation processes during annealing of Al-amorphous alloys

    Energy Technology Data Exchange (ETDEWEB)

    Petrescu, N. (Polytechnic Inst. Bucharest, Faculty Materials Science and Engineering, Bucharest (Romania)); Petrescu, M. (Polytechnic Inst. Bucharest, Faculty Materials Science and Engineering, Bucharest (Romania)); Calin, M. (Polytechnic Inst. Bucharest, Faculty Materials Science and Engineering, Bucharest (Romania)); Jianu, A.D. (Polytechnic Inst. Bucharest, Faculty Materials Science and Engineering, Bucharest (Romania) IFTM-Bucharest (Romania)); Fecioru, M. (Polytechnic Inst. Bucharest, Faculty Materials Science and Engineering, Bucharest (Romania) DACIA Enterprise-Bucharest (Romania))

    1993-11-01

    As the amorphous aluminum alloys represent the newest achievement in rapid solidification of Al-based high strength heat resistent materials, a study was undertaken on the amorphous alloys in the Al-RE-TM system, the rare-earth metal being a lanthanide mixture and the transition metal a Ni-Fe substitution in definite proportions. The decomposition on heating of the most highly alloyed amorphous alloy in the investigated series is characterized by differential thermal analysis, electron microscopy and X-ray diffraction. (orig.).

  3. Moessbauer effect study on mechanically alloyed amorphous Fe1-xTix alloys

    International Nuclear Information System (INIS)

    Chen Hong; Xu Zuxiong; Ma Ruzhang; Zhao Zhongtao; Ping Jueyun

    1994-01-01

    Amorphous Fe 1-x Ti x (x = 0.50, 0.60) powders were produced by mechanical alloying from pure elemental powders in a vibratory ball-mill. X-ray diffraction (XRD) and Moessbauer effect (ME) were used to study the progress of amorphization and the property of hydrogen absorption in Fe-Ti alloys. The amorphization process and the properties of the amorphous phase are discussed. (orig.)

  4. Crystallization-induced plasticity of Cu-Zr containing bulk amorphous alloys

    International Nuclear Information System (INIS)

    Lee, Seok-Woo; Huh, Moo-Young; Fleury, Eric; Lee, Jae-Chul

    2006-01-01

    This study examined the parameter governing the plasticity observed in various Cu-Zr containing monolithic amorphous alloys. All the alloys were fully amorphous in their as-cast condition but exhibited different plastic strains. Microscopic observations of the quasi-statically compressed alloys showed abundant nanocrystallites in the amorphous matrices in the alloys that exhibited pronounced plasticity. On the other hand, insignificant changes in the microstructure were observed in the alloy that did not show plasticity. The mechanism for the formation of these deformation-induced nanocrystallites was examined from the viewpoints of thermodynamics and kinetics. The role of the deformation-induced nanocrystallites on the plasticity of the amorphous alloy was examined using high-resolution transmission electron microscopy. The results demonstrate that compressive loading facilitates nanocrystallization in monolithic Cu-Zr containing amorphous alloys, resulting in plasticity. The parameter governing the plasticity in these monolithic Cu-Zr containing amorphous alloys lies in the activation energy for the overall crystallization process

  5. Characterization of thin film deposits on tungsten filaments in catalytic chemical vapor deposition using 1,1-dimethylsilacyclobutane

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Yujun, E-mail: shiy@ucalgary.ca; Tong, Ling; Mulmi, Suresh [Department of Chemistry, University of Calgary, Calgary, Alberta T2N 1N4 (Canada)

    2016-09-15

    Metal filament plays a key role in the technique of catalytic chemical vapor deposition (Cat-CVD) as it serves as a catalyst in dissociating the source gas to form reactive species. These reactive species initiate the gas-phase reaction chemistry and final thin film and nanostructure formation. At the same time, they also react with the metal itself, leading to the formation of metal alloys and other deposits. The deposits on the tungsten filaments when exposed to 1,1-dimethylsilacyclobutane (DMSCB), a single-source precursor for silicon carbide thin films, in the process of Cat-CVD were studied in this work. It has been demonstrated that a rich variety of deposits, including tungsten carbides (W{sub 2}C and WC), tungsten silicide (W{sub 5}Si{sub 3}), silicon carbide, amorphous carbon, and graphite, form on the W filament surfaces. The structural and morphological changes in the tungsten filaments depend strongly on the DMSCB pressure and filament temperature. At 1000 and 2000 °C, the formation of WC and W{sub 2}C dominates. In addition, a thin amorphous carbon layer has been found at 1500 °C with the 0.12 and 0.24 Torr of DMSCB and a lower temperature of 1200 °C with the 0.48 Torr of DMSCB. An increase in the DMSCB sample pressure gives rise to higher Si and C contents. As a result, the formation of SiC and W{sub 5}Si{sub 3} has been observed with the two high-pressure DMSCB samples (i.e., 0.24 and 0.48 Torr). The rich decomposition chemistry of DMSCB on the W surfaces is responsible for the extensive changes in the structure of the W filament, providing support for the close relationship between the gas-phase decomposition chemistry and the nature of alloy formation on the metal surface. The understanding of the structural changes obtained from this work will help guide the development of efficient methods to solve the filament aging problem in Cat-CVD and also to achieve a controllable deposition process.

  6. Miscibility of amorphous ZrO2-Al2O3 binary alloy

    Science.gov (United States)

    Zhao, C.; Richard, O.; Bender, H.; Caymax, M.; De Gendt, S.; Heyns, M.; Young, E.; Roebben, G.; Van Der Biest, O.; Haukka, S.

    2002-04-01

    Miscibility is a key factor for maintaining the homogeneity of the amorphous structure in a ZrO2-Al2O3 binary alloy high-k dielectric layer. In the present work, a ZrO2/Al2O3 laminate thin layer has been prepared by atomic layer chemical vapor deposition on a Si (100) wafer. This layer, with artificially induced inhomogeneity (lamination), enables one to study the change in homogeneity of the amorphous phase in the ZrO2/Al2O3 system during annealing. High temperature grazing incidence x-ray diffraction (HT-XRD) was used to investigate the change in intensity of the constructive interference peak of the x-ray beams which are reflected from the interfaces of ZrO2/Al2O3 laminae. The HT-XRD spectra show that the intensity of the peak decreases with an increase in the anneal temperature, and at 800 °C, the peak disappears. The same samples were annealed by a rapid thermal process (RTP) at temperatures between 700 and 1000 °C for 60 s. Room temperature XRD of the RTP annealed samples shows a similar decrease in peak intensity. Transmission electronic microscope images confirm that the laminate structure is destroyed by RTP anneals and, just below the crystallization onset temperature, a homogeneous amorphous ZrAlxOy phase forms. The results demonstrate that the two artificially separated phases, ZrO2 and Al2O3 laminae, tend to mix into a homogeneous amorphous phase before crystallization. This observation indicates that the thermal stability of ZrO2-Al2O3 amorphous phase is suitable for high-k applications.

  7. Opto-electrical properties of amorphous carbon thin film deposited from natural precursor camphor

    Energy Technology Data Exchange (ETDEWEB)

    Pradhan, Debabrata [Department of Chemistry, Indian Institute of Technology Bombay, Mumbai 400 076 (India)]. E-mail: dpradhan@sciborg.uwaterloo.ca; Sharon, Maheshwar [Department of Chemistry, Indian Institute of Technology Bombay, Mumbai 400 076 (India)

    2007-06-30

    A simple thermal chemical vapor deposition technique is employed for the pyrolysis of a natural precursor 'camphor' and deposition of carbon films on alumina substrate at higher temperatures (600-900 deg. C). X-ray diffraction measurement reveals the amorphous structure of these films. The carbon films properties are found to significantly vary with the deposition temperatures. At higher deposition temperature, films have shown predominately sp{sup 2}-bonded carbon and therefore, higher conductivity and lower optical band gap (Tauc gap). These amorphous carbon (a-C) films are also characterized with Raman and X-ray photoelectron spectroscopy. In addition, electrical and optical properties are measured. The thermoelectric measurement shows these as-grown a-C films are p-type in nature.

  8. Krypton-85 storage in sputter-deposited amorphous metals

    International Nuclear Information System (INIS)

    Tingey, G.L.; McClanahan, E.D.; Lytle, J.M.; Gordon, N.R.; Knoll, R.W.

    1982-06-01

    After comparing options for storing radioactive krypton gas, the United States Department of Energy selected ion implantation of the gas into a sputter-deposited metal matrix as the reference process. This technique is being developed with pilot-scale testing and further characterization of the deposited product. The process involves implanting krypton atoms into a growing deposit during the sputtering process. An amorphous metal deposit of nominal composition Ni 0 81 La 0 09 Kr 0 10 has been selected for further studies because of the high krypton loading, high sputtering yield, relatively low cost of the metallic components, resistance to corrosion, and stability of the product. The krypton release from this amorphous metal is described as an activated diffusion process which increases linearly with the square root of time. Studies of krypton release rate as a function of temperature were completed and an activation energy for the diffusion of 70 kcal/mole obtained. From these data, we estimated that the krypton release during the first ten years would be 0.5% for a maximum temperature of 350 0 C. The actual release of the krypton during storage was projected to be lower by a factor of 10 7 with the maximum temperature only 220 0 C. Thermal analysis studies show two energy releases occurring with krypton-containing alloys: one associated with recrystallization of the amorphous alloy and a second associated with krypton release. The total energy release between 100 and 800 0 C was less than 50 cal/g. Estimates are given for the cost of operation of the ion implantation process for solidification of the krypton-85 from a 2000-tonne heavy metal/year reprocessing plant. The present value costs, in 1981 dollars including capital and operating costs and assuming a 30-year life, are about $26M for the lifetime of the plant. Annual energy consumption of the process was estimated to be 3.9 M kWh/year

  9. Etching characteristics and application of physical-vapor-deposited amorphous carbon for multilevel resist

    International Nuclear Information System (INIS)

    Kim, H. T.; Kwon, B. S.; Lee, N.-E.; Park, Y. S.; Cho, H. J.; Hong, B.

    2008-01-01

    For the fabrication of a multilevel resist (MLR) based on a very thin, physical-vapor-deposited (PVD) amorphous carbon (a-C) layer, the etching characteristics of the PVD a-C layer with a SiO x hard mask were investigated in a dual-frequency superimposed capacitively coupled plasma etcher by varying the following process parameters in O 2 /N 2 /Ar plasmas: high-frequency/low-frequency combination (f HF /f LF ), HF/LF power ratio (P HF /P LF ), and O 2 and N 2 flow rates. The very thin nature of the a-C layer helps to keep the aspect ratio of the etched features low. The etch rate of the PVD a-C layer increased with decreasing f HF /f LF combination and increasing P LF and was initially increased but then decreased with increasing N 2 flow rate in O 2 /N 2 /Ar plasmas. The application of a 30 nm PVD a-C layer in the MLR structure of ArF PR/BARC/SiO x /PVD a-C/TEOS oxide supported the possibility of using a very thin PVD a-C layer as an etch-mask layer for the TEOS-oxide layer

  10. A study of the diffusion mechanisms in amorphous metallic alloys: diffusion and diffusion under high pressure in an amorphous NiZr alloy

    International Nuclear Information System (INIS)

    Grandjean, A.

    1996-01-01

    The aim of this work is a better understanding of the diffusion mechanism in amorphous metallic alloys. Then interdiffusion and hafnium diffusion in amorphous NiZr alloy have been studied. Samples used are made by sputtering co-deposition under vacuum and are well relaxed before the diffusion measurements. The time evolution of resistivity during annealing due to the decay of a composition modulated film has been measured and from this change in resistivity interdiffusion coefficients have been determined. Dependence of Hf diffusion on temperature and pressure has been studied using (SIMS). In this two cases, the diffusion process obeys an Arrhenius law and gives an activation energy of 1.33 eV for interdiffusion, and 0.76 eV for Hf diffusion. An effect of pressure on Hf diffusion has been found leading to an activation volume of 8.5 angstrom 3 . Thanks to these results, two approaches of the diffusion mechanisms in these systems have been proposed. The first comes from a comparison with the diffusion mechanisms in crystalline metals, that is to say by point defects. The second is an hypothesis of collective motions in these non crystalline alloys. (author)

  11. Improved amorphous/crystalline silicon interface passivation for heterojunction solar cells by low-temperature chemical vapor deposition and post-annealing treatment.

    Science.gov (United States)

    Wang, Fengyou; Zhang, Xiaodan; Wang, Liguo; Jiang, Yuanjian; Wei, Changchun; Xu, Shengzhi; Zhao, Ying

    2014-10-07

    In this study, hydrogenated amorphous silicon (a-Si:H) thin films are deposited using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) system. The Si-H configuration of the a-Si:H/c-Si interface is regulated by optimizing the deposition temperature and post-annealing duration to improve the minority carrier lifetime (τeff) of a commercial Czochralski (Cz) silicon wafer. The mechanism of this improvement involves saturation of the microstructural defects with hydrogen evolved within the a-Si:H films due to the transformation from SiH2 into SiH during the annealing process. The post-annealing temperature is controlled to ∼180 °C so that silicon heterojunction solar cells (SHJ) could be prepared without an additional annealing step. To achieve better performance of the SHJ solar cells, we also optimize the thickness of the a-Si:H passivation layer. Finally, complete SHJ solar cells are fabricated using different temperatures for the a-Si:H film deposition to study the influence of the deposition temperature on the solar cell parameters. For the optimized a-Si:H deposition conditions, an efficiency of 18.41% is achieved on a textured Cz silicon wafer.

  12. Control and optimization of baths for electrodeposition of Co-Mo-B amorphous alloys

    Directory of Open Access Journals (Sweden)

    S. Prasad

    2000-12-01

    Full Text Available Optimization and control of an electrodeposition process for depositing boron-containing amorphous metallic layer of cobalt-molybdenum alloy onto a cathode from an electrolytic bath having cobalt sulfate, sodium molybdate, boron phosphate, sodium citrate, 1-dodecylsulfate-Na, ammonium sulfate and ammonia or sulfuric acid for pH adjustments has been studied. Detailed studies on bath composition, pH, temperature, mechanical agitation and cathode current density have led to optimum conditions for obtaining satisfactory alloy deposits. These alloys were found to have interesting properties such as high hardness, corrosion resistance, wear resistance and also sufficient ductility. A voltammetric method for automatic monitoring and control of the process has been proposed.

  13. Development of shear bands in amorphous-crystalline metallic alloys

    International Nuclear Information System (INIS)

    Pozdnyakov, V.A.

    2004-01-01

    A theoretical study is made into conditions of shear band evolution in amorphous-crystalline alloys with various morphological types of structural constituents. The condition of shear band evolution in thin amorphous alloys in the interior of the crystalline matrix is obtained. It is shown that a scale effect exists which manifests itself in suppression of the process of localized plastic flow with amorphous alloy thickness decreasing down to the limit. The analysis of the condition for shear band evolution in an amorphous alloy with nanocrystalline inclusions is accomplished. The relationship of a critical stress of shear band evolution to a volume fraction of disperse crystal inclusions is obtained. A consideration is also given to the evolution of shear bands in the material containing amorphous and crystalline areas of micro meter size. For the alloy with the structure of this type conditions for propagation of localized flows by a relay race type mechanism are determined [ru

  14. Superplasticity of amorphous alloy

    International Nuclear Information System (INIS)

    Levin, Yu.B.; Likhachev, V.L.; Sen'kov, O.N.

    1988-01-01

    Results of mechanical tests of Co 57 Ni 10 Fe 5 Si 11 B 17 amorphous alloy are presented and the effect of crystallization, occurring during deformation process, on plastic low characteristics is investiagted. Superplasticity of amorphous tape is investigated. It is shown, that this effect occurs only when during deformation the crystallization takes place. Process model, based on the usage disclination concepts about glass nature, is suggested

  15. Amorphization of Fe-based alloy via wet mechanical alloying assisted by PCA decomposition

    Energy Technology Data Exchange (ETDEWEB)

    Neamţu, B.V., E-mail: Bogdan.Neamtu@stm.utcluj.ro [Materials Science and Engineering Department, Technical University of Cluj-Napoca, 103-105, Muncii Avenue, 400641, Cluj-Napoca (Romania); Chicinaş, H.F.; Marinca, T.F. [Materials Science and Engineering Department, Technical University of Cluj-Napoca, 103-105, Muncii Avenue, 400641, Cluj-Napoca (Romania); Isnard, O. [Université Grenoble Alpes, Institut NEEL, F-38042, Grenoble (France); CNRS, Institut NEEL, 25 rue des martyrs, BP166, F-38042, Grenoble (France); Pană, O. [National Institute for Research and Development of Isotopic and Molecular Technologies, 65-103 Donath Street, 400293, Cluj-Napoca (Romania); Chicinaş, I. [Materials Science and Engineering Department, Technical University of Cluj-Napoca, 103-105, Muncii Avenue, 400641, Cluj-Napoca (Romania)

    2016-11-01

    Amorphization of Fe{sub 75}Si{sub 20}B{sub 5} (at.%) alloy has been attempted both by wet and dry mechanical alloying starting from a mixture of elemental powders. Powder amorphization was not achieved even after 140 hours of dry mechanical alloying. Using the same milling parameters, when wet mechanical alloying was used, the powder amorphization was achieved after 40 h of milling. Our assumption regarding the powder amorphization capability enhancement by contamination with carbon was proved by X-ray Photoelectron Spectroscopy (XPS) measurements which revealed the presence of carbon in the chemical composition of the wet mechanically alloyed sample. Using shorter milling times and several process control agents (PCA) (ethanol, oleic acid and benzene) with different carbon content it was proved that the milling duration required for powder amorphization is linked to the carbon content of the PCA. Differential Scanning Calorimetry (DSC), thermomagnetic (TG) and X-ray Diffraction (XRD) measurements performed to the heated samples revealed the fact that, the crystallisation occurs at 488 °C, thus leading to the formation of Fe{sub 3}Si and Fe{sub 2}B. Thermogravimetry measurements performed under H{sub 2} atmosphere, showed the same amount of contamination with C, which is about 2.3 wt%, for the amorphous samples regardless of the type of PCA. Saturation magnetisation of the wet milled samples decreases upon increasing milling time. In the case of the amorphous samples wet milled with benzene up to 20 h and with oleic acid up to 30 h, the saturation magnetisation has roughly the same value, indicating the same degree of contamination. The XRD performed on the samples milled using the same parameters, revealed that powder amorphization can be achieved even via dry milling, just by adding the equivalent amount of elemental C calculated from the TG plots. This proves that in this system by considering the atomic species which can contaminate the powder, they can be

  16. Ductile fracture surface morphology of amorphous metallic alloys

    NARCIS (Netherlands)

    Miskuf, J; Csach, K; Ocelik, [No Value; Bengus, VZ; Tabachnikova, ED; Duhaj, P; Ocelik, Vaclav

    1999-01-01

    Fracture surfaces of ductile failure of two types bulk amorphous metallic alloys were studied using quantitative and qualitative fractographic analysis. The observed fractographic behaviour of ductile failure in comparison with the ductile failure of amorphous alloy ribbons shows signs of the same

  17. Correlation of atomic packing with the boson peak in amorphous alloys

    Energy Technology Data Exchange (ETDEWEB)

    Yang, W. M. [State Key Laboratory for Geomechanics and Deep Underground Engineering, School of Mechanics and Civil Engineering, School of Sciences, China University of Mining and Technology, Xuzhou 221116 (China); Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); School of Materials Science and Engineering, Southeast University, Nanjing 211189 (China); Liu, H. S., E-mail: liuhaishun@126.com, E-mail: blshen@seu.edu.cn, E-mail: runweili@nimte.ac.cn, E-mail: jiangjz@zju.edu.cn; Zhao, Y. C. [State Key Laboratory for Geomechanics and Deep Underground Engineering, School of Mechanics and Civil Engineering, School of Sciences, China University of Mining and Technology, Xuzhou 221116 (China); Liu, X. J. [State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083 (China); Chen, G. X.; Man, Q. K.; Chang, C. T.; Li, R. W., E-mail: liuhaishun@126.com, E-mail: blshen@seu.edu.cn, E-mail: runweili@nimte.ac.cn, E-mail: jiangjz@zju.edu.cn [Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Dun, C. C. [Department of Physics, Wake Forest University, Winston-Salem, North Carolina 27109 (United States); Shen, B. L., E-mail: liuhaishun@126.com, E-mail: blshen@seu.edu.cn, E-mail: runweili@nimte.ac.cn, E-mail: jiangjz@zju.edu.cn [School of Materials Science and Engineering, Southeast University, Nanjing 211189 (China); Inoue, A. [Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); and others

    2014-09-28

    Boson peaks (BP) have been observed from phonon specific heats in 10 studied amorphous alloys. Two Einstein-type vibration modes were proposed in this work and all data can be fitted well. By measuring and analyzing local atomic structures of studied amorphous alloys and 56 reported amorphous alloys, it is found that (a) the BP originates from local harmonic vibration modes associated with the lengths of short-range order (SRO) and medium-range order (MRO) in amorphous alloys, and (b) the atomic packing in amorphous alloys follows a universal scaling law, i.e., the ratios of SRO and MRO lengths to solvent atomic diameter are 3 and 7, respectively, which exact match with length ratios of BP vibration frequencies to Debye frequency for the studied amorphous alloys. This finding provides a new perspective for atomic packing in amorphous materials, and has significant implications for quantitative description of the local atomic orders and understanding the structure-property relationship.

  18. Bulk amorphous Mg-based alloys

    DEFF Research Database (Denmark)

    Pryds, Nini

    2004-01-01

    are discussed in this paper. On the basis of these measurements phase diagrams of the different systems were constructed. Finally, it is demonstrated that when pressing the bulk amorphous alloy onto a metallic dies at temperatures within the supercooled liquid region, the alloy faithfully replicates the surface...

  19. Semiconducting Properties of Nanostructured Amorphous Carbon Thin Films Incorporated with Iodine by Thermal Chemical Vapor Deposition

    Science.gov (United States)

    Kamaruzaman, Dayana; Ahmad, Nurfadzilah; Annuar, Ishak; Rusop, Mohamad

    2013-11-01

    Nanostructured iodine-post doped amorphous carbon (a-C:I) thin films were prepared from camphor oil using a thermal chemical vapor deposition (TCVD) technique at different doping temperatures. The structural properties of the films were studied by field-emission scanning electron microscopy (FESEM), energy-dispersive spectroscopy (EDS), Raman, and Fourier transform infrared (FTIR) studies. FESEM and EDS studies showed successful iodine doping. FTIR and Raman studies showed that the a-C:I thin films consisted of a mixture of sp2- and sp3-bonded carbon atoms. The optical and electrical properties of a-C:I thin films were determined by UV-vis-NIR spectroscopy and current-voltage (I-V) measurement respectively. The optical band gap of a-C thin films decreased upon iodine doping. The highest electrical conductivity was found at 400 °C doping. Heterojunctions are confirmed by rectifying the I-V characteristics of an a-C:I/n-Si junction.

  20. Novel Amorphous Fe-Zr-Si(Cu) Boron-free Alloys

    Science.gov (United States)

    Kopcewicz, M.; Grabias, A.; Latuch, J.; Kowalczyk, M.

    2010-07-01

    Novel amorphous Fe80(ZrxSi20-x-y)Cuy boron-free alloys, in which boron was completely replaced by silicon as a glass forming element, have been prepared in the form of ribbons by a melt quenching technique. The X-ray diffraction and Mössbauer spectroscopy measurements revealed that the as-quenched ribbons with the composition of x = 6-10 at. % and y = 0, 1 at. % are predominantly amorphous. DSC measurements allowed the estimation of the crystallization temperatures of the amorphous alloys. The soft magnetic properties have been studied by the specialized rf-Mössbauer technique in which the spectra were recorded during an exposure of the samples to the rf field of 0 to 20 Oe at 61.8 MHz. Since the rf-collapse effect observed is very sensitive to the local anisotropy fields it was possible to evaluate the soft magnetic properties of amorphous alloys studied. The rf-Mössbauer studies were accompanied by the conventional measurements of the quasi-static hysteresis loops from which the magnetization and coercive fields were estimated. It was found that amorphous Fe-Zr-Si(Cu) alloys are magnetically very soft, comparable with those of the conventional amorphous B-containing Fe-based alloys.

  1. Evaporation monitoring and composition control of alloy systems with widely differing vapor pressures

    International Nuclear Information System (INIS)

    Anklam, T.M.; Berzins, L.V.; Braun, D.G.; Haynam, C.; McClelland, M.A.; Meier, T.

    1994-10-01

    Lawrence Livermore National Laboratory is developing sensors and controls to improve and extend electron beam materials processing technology to alloy systems with constituents of widely varying vapor pressure. The approach under development involves using tunable lasers to measure the density and composition of the vapor plume. A laser based vaporizer control system for vaporization of a uranium-iron alloy has been previously demonstrated in multi-hundred hour, high rate vaporization experiments at LLNL. This paper reviews the design and performance of the uranium vaporization sensor and control system and discusses the extension of the technology to monitoring of uranium vaporization. Data is presented from an experiment in which titanium wire was fed into a molten niobium pool. Laser data is compared to deposited film composition and film cross sections. Finally, the potential for using this technique for composition control in melting applications is discussed

  2. The Chemically-Specific Structure of an Amorphous Molybdenum Germanium Alloy by Anomalous X-ray Scattering

    Energy Technology Data Exchange (ETDEWEB)

    Ishii, H. A.

    2002-06-11

    Since its inception in the late 1970s, anomalous x-ray scattering (AXS) has been employed for chemically-specific structure determination in a wide variety of noncrystalline materials. These studies have successfully produced differential distribution functions (DDFs) which provide information about the compositionally-averaged environment of a specific atomic species in the sample. Despite the wide success in obtaining DDFs, there are very few examples of successful extraction of the fully-chemically-specific partial pair distribution functions (PPDFs), the most detailed description of an amorphous sample possible by x-ray scattering. Extracting the PPDFs is notoriously difficult since the matrix equation involved is ill-conditioned and thus extremely sensitive to errors present in the experimental quantities that enter the equation. Instead of addressing this sensitivity by modifying the data through mathematical methods, sources of error have been removed experimentally: A focusing analyzer crystal was combined with a position-sensitive linear detector to experimentally eliminate unwanted inelastic scattering intensity over most of the reciprocal space range probed. This instrumentation has been used in data collection for the extraction of PPDFs from amorphous (a)-MoGe{sub 3}. This composition arises as a phase separation endpoint in the Ge-rich region of the vapor-deposited Mo-Ge amorphous alloy system but is not present at equilibrium. Since the first Ge-rich compound in the Mo-Ge equilibrium system is MoGe{sub 2}, previous workers have speculated that perhaps a unique MoGe{sub 3} compound exists in the amorphous system. Rather than indicating a distinct MoGe{sub 3} compound with definitive local structure, however, the coordination results are more consistent with a densely-packed alloy having a wide range of solid solubility. Significant improvement in the quality and reliability of experimental PPDFs from a-MoGe{sub 3} by AXS has been achieved solely

  3. Hydrogenated amorphous silicon-selenium alloys - a short journey through parameter space

    International Nuclear Information System (INIS)

    Al-Dallal, S.; Al-Alawi, S.M.; Aljishi, S.

    1999-01-01

    Hydrogenated amorphous silicon-selenium alloy thin films were grown by capacity coupled radio frequency glow discharge decomposition of (SiH/sub 4/ + He) and (H/sub 2/S + He) gas mixtures. In this work we report on a study to correlate the deposition parameters of a-Si, Se:H thin films with its optical, electronic and spectroscopic properties. The alloy composition was varied by changing the gas volume ratio R/sub v/ = [H/sub 2/Se]/[SiH/sub 4/]. The films are characterized via infrared spectroscopy, photoconductivity, photoluminescence, constant current method and conductivity measurements. (author)

  4. Annealing behavior of high permeability amorphous alloys

    International Nuclear Information System (INIS)

    Rabenberg, L.

    1980-06-01

    Effects of low temperature annealing on the magnetic properties of the amorphous alloy Co 71 4 Fe 4 6 Si 9 6 B 14 4 were investigated. Annealing this alloy below 400 0 C results in magnetic hardening; annealing above 400 0 C but below the crystallization temperature results in magnetic softening. Above the crystallization temperature the alloy hardens drastically and irreversibly. Conventional and high resolution transmission electron microscopy were used to show that the magnetic property changes at low temperatures occur while the alloy is truly amorphous. By imaging the magnetic microstructures, Lorentz electron microscopy has been able to detect the presence of microscopic inhomogeneities in this alloy. The low temperature annealing behavior of this alloy has been explained in terms of atomic pair ordering in the presence of the internal molecular field. Lorentz electron microscopy has been used to confirm this explanation

  5. How deposition parameters control growth dynamics of nc-Si deposited by hot-wire chemical vapor deposition

    International Nuclear Information System (INIS)

    Moutinho, H.R.; To, B.; Jiang, C.-S.; Xu, Y.; Nelson, B.P.; Teplin, C.W.; Jones, K.M.; Perkins, J.; Al-Jassim, M.M.

    2006-01-01

    We studied the growth of silicon films deposited by hot-wire chemical vapor deposition under different values of filament current, substrate temperature, and hydrogen dilution ratio. The physical and electrical properties of the films were studied by Raman spectroscopy, x-ray diffraction, atomic force microscopy, conductive-atomic force microscopy, and transmission electron microscopy. There is an interdependence of the growth parameters, and films grown with different parameters can have similar structures. We discuss why this interdependence occurs and how it influences the properties of the deposited films, as well as the deposition rate. In general, the films have a complex structure, with a mixture of amorphous (220)-oriented crystalline and nanocrystalline phases present in most cases. The amount of each phase can be controlled by the variation of one or more of the growth parameters at a time

  6. Amorphization of C-implanted Fe(Cr) alloys

    International Nuclear Information System (INIS)

    Knapp, J.A.; Follstaedt, D.M.; Sorensen, N.R.; Pope, L.E.

    1991-01-01

    The amorphous phase formed by implanting C into Fe alloyed with Cr, which is a prototype for the amorphous phase formed by implanting C into stainless steels, is compared to that formed by implanting C and Ti into Fe and steels. The composition range of the phase has been examined; higher Cr and C concentrations are required than needed with Ti and C. The friction and wear benefits obtained by implanting stainless steels with C only do not persist for the long durations and high wear loads found with Ti and C. However, the amorphous Fe-Cr-C alloys exhibit good aqueous corrosion resistance. (orig.)

  7. Superconducting properties of amorphous Zr-Ge binary alloys

    International Nuclear Information System (INIS)

    Inoue, A.; Takahashi, Y.; Toyota, N.; Fukase, T.; Masumoto, T.

    1982-01-01

    A new type of refractory metal-metalloid amorphous alloys exhibiting superconductivity has been found in a binary Zr-Ge system by a modified melt-spinning technique. Specimens are in the form of continuous ribbons 1 to 2 mm wide and 0.02 to 0.03 mm thick. The germanium content in the amorphous alloys is limited to the range of 13 to 21 at%. These amorphous alloys are so ductile that no cracks are observed even after closely contacted bending test. Data are reported for various alloy compositions for the Vickers hardness and crystallization temperature, the tensile fracture strength, superconducting transition temperature Tsub(c), upper critical magnetic field, critical current density in the absence of an applied field, upper critical field gradient at Tsub(c) and the electrical resistivity at 4.2 K. The Ginzburg-Landau (GL) parameter and the GL coherence length were estimated to be 72 to 111 and about 7.9 nm, respectively, from these experimental values by using the Ginzburg-Landau-Abrikosov-Gorkov theory and hence it is concluded that the Zr-Ge amorphous alloys are extremely 'soft' type-II superconductor with high degree of dirtiness which possesses the Tsub(c) values higher than zirconium metal, in addition to high strength combined with good ductility. (author)

  8. Amorphous silicon ionizing particle detectors

    Science.gov (United States)

    Street, Robert A.; Mendez, Victor P.; Kaplan, Selig N.

    1988-01-01

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

  9. Production and properties of light-metal base amorphous alloys

    International Nuclear Information System (INIS)

    Inoue, Akihisa; Masumoto, Tsuyoshi

    1993-01-01

    Light-metal base alloys with high specific strength and good corrosion resistance were produced through amorphization of Al and Mg-based alloys. The amorphous phase is formed in rapidly solidified Al-TM-Ln and Mg-TM-Ln (TM=transition metal, Ln=lanthanide metal) alloys. The highest tensile strength (σ f ) reaches 1,330 MPa for the Al base and 830 MPa for the Mg base. Furthermore, the Mg-based alloys have a large glass-forming capacity which enables to produce an amorphous phase by a metallic mold casting method. The extrusion of the Al-based amorphous powders at temperatures above crystallization temperature caused the formation of high strength materials with finely mixed structure consisting of dispersed intermetallic compounds in an Al matrix. The highest values of σ f and fatigue limit are as high as 940 and 313 MPa, respectively, at room temperature and 520 and 165 MPa at 473 K. The extruded Al-Ni-Mm alloy has already been used as machine parts and subsequent further development as practical materials is expected by taking these advantages

  10. Surface-Activated Amorphous Alloy Fuel Electrodes for Methanol Fuel Cell

    OpenAIRE

    Asahi, Kawashima; Koji, Hashimoto; The Research Institute for Iron, Steel and Other Metals; The Research Institute for Iron, Steel and Other Metals

    1983-01-01

    Amorphous alloy electrodes for electrochemical oxidation of methanol and its derivatives were obtained by the surface activation treatment consisting of electrodeposition of zinc on as-quenched amorphous alloy substrates, heating at 200-300℃ for 30 min, and subsequently leaching of zinc in an alkaline solution. The surface activation treatment provided a new method for the preparation of a large surface area on the amorphous alloys. The best result for oxidation of methanol, sodium formate an...

  11. Corrosion resistance of amorphous NiCrZr and NiCrMoZr alloys

    International Nuclear Information System (INIS)

    Naka, M.; Miyake, M.; Okamoto, I.

    1987-01-01

    One of the authors has reported that the corrosion resistance of chromium containing amorphous alloys is extremely improved by alloying phosphorus among metalloids. Two factors operate for the improvement of corrosion resistance of the amorphous alloys. First, phosphorus serves for the rapid formation of protective passive film. Second, the compositional and structural homogeneity in amorphous state also account for the formation of protective film. The latter factor has been clearly seen in the high corrosion resistance of CoCrMoZr and CoCrWZr alloys without metalloids. In order to clarify the separately two factors in the corrosion resistance of amorphous alloys, the corrosion resistance of amorphous alloys without metalloids has to be further investigated. This paper also deals with the corrosion resistance and electrochemical behavior of NiCrZr and NiCrMoZr alloys in 1N HCl, and compare them with the corrosion behavior of the crystalline alloys containing the same composition as that of the amorphous alloys

  12. Effect of performance of Zr-Y alloy target on thin film deposition technology

    International Nuclear Information System (INIS)

    Pan Qianfu; Liu Chaohong; Jiang Mingzhong; Yin Changgeng

    2011-01-01

    Yttria-stabilized zirconia (YSZ) films are synthesized on corrosion resistant plates by pulsed bias arc ion plating. The arc starting performance and the stability of thin film deposition is explored by improving the uniformity and compactibility of Zr-Y alloy target. The property of Zr-Y alloy target and depositional thin films were measured with the optical microscope, scanning electron microscope, X-ray diffractometer. The result shows that the target with hot rolling and annealing has a good arc starting performance and stability of thin film deposition, and the depositional thin films made of Yttria and amorphous zirconia are homogeneous and compact. (authors)

  13. Synthesis of Amorphous Powders of Ni-Si and Co-Si Alloys by Mechanical Alloying

    Science.gov (United States)

    Omuro, Keisuke; Miura, Harumatsu

    1991-05-01

    Amorphous powders of the Ni-Si and Co-Si alloys are synthesized by mechanical alloying (MA) from crystalline elemental powders using a high energy ball mill. The alloying and amorphization process is examined by X-ray diffraction, differential scanning calorimetry (DSC), and scanning electron microscopy. For the Ni-Si alloy, it is confirmed that the crystallization temperature of the MA powder, measured by DSC, is in good agreement with that of the powder sample prepared by mechanical grinding from the cast alloy ingot products of the same composition.

  14. Production of amorphous alloys by ion implantation

    International Nuclear Information System (INIS)

    Grant, W.A.; Chadderton, L.T.; Johnson, E.

    1978-01-01

    Recent data are reported on the use of ion implantation to produce amorphous metallic alloys. In particular data on the dose dependence of the crystalline to amorphous transition induced by P + implantation of nickel is presented. (Auth.)

  15. Mg amorphous alloys for biodegradable implants

    International Nuclear Information System (INIS)

    Danez, G.P.; Koga, G.Y.; Tonucci, S.; Bolfarini, C.; Kiminami, C.S.; Botta Filho, W.J.

    2010-01-01

    The use of implants made from amorphous alloys magnesium-based with additions of zinc and calcium are promising. Properties such as biocompatibility, low density, high mechanical strength, low modulus (as compared to alloys such as stainless steel and titanium), corrosion resistance and wear resistance make it attractive for use in implants. Moreover, the by-products of corrosion and wear are not toxic and may contribute to fixation. Aiming to understand the tendency of this amorphous ternary (Mg-Zn-Ca) and expand the information about this system, this work involved the use of the topological criterion of instability (λ) and the criterion of electronegativity (Δe) to the choice of compositions. The alloys were processed into wedge-shaped and analyzed structurally and in X-ray diffraction and scanning electron microscopy. (author)

  16. Relaxation processes during amorphous metal alloys heating

    International Nuclear Information System (INIS)

    Malinochka, E.Ya.; Durachenko, A.M.; Borisov, V.T.

    1982-01-01

    Behaviour of Te+15 at.%Ge and Fe+13 at.%P+7 at.%C amorphous metal alloys during heating has been studied using the method of differential scanning calorimetry (DSC) as the most convenient one for determination of the value of heat effects, activation energies, temperature ranges of relaxation processes. Thermal effects corresponding to high-temperature relaxation processes taking place during amorphous metal alloys (AMA) heating are detected. The change of ratio of relaxation peaks values on DSC curves as a result of AMA heat treatment can be explained by the presence of a number of levels of inner energy in amorphous system, separated with potential barriers, the heights of which correspond to certain activation energies of relaxation processes

  17. Optical spectroscopic characterization of amorphous germanium carbide materials obtained by X-Ray Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Paola Antoniotti

    2015-05-01

    Full Text Available Amorphous germanium carbides have been prepared by X-ray activated Chemical Vapor Deposition from germane/allene systems. The allene percentage and irradiation time (total dose were correlated to the composition, the structural features, and the optical coefficients of the films, as studied by IR and UV-VIS spectroscopic techniques. The materials composition is found to change depending on both the allene percentage in the mixture and the irradiation time. IR spectroscopy results indicate that the solids consist of randomly bound networks of carbon and germanium atoms with hydrogen atoms terminating all the dangling bonds. Moreover, the elemental analysis results, the absence of both unsaturated bonds and CH3 groups into the solids and the absence of allene autocondensation reactions products, indicate that polymerization reactions leading to mixed species, containing Ge-C bonds, are favored. Eopt values around 3.5 eV have been found in most of the cases, and are correlated with C sp3-bonding configuration. The B1/2 value, related to the order degree, has been found to be dependent on solid composition, atoms distribution in the material and hydrogenation degree of carbon atoms.

  18. Effect of Radio-Frequency and Low-Frequency Bias Voltage on the Formation of Amorphous Carbon Films Deposited by Plasma Enhanced Chemical Vapor Deposition

    International Nuclear Information System (INIS)

    Manis-Levy, Hadar; Mintz, Moshe H.; Livneh, Tsachi; Zukerman Ido; Raveh, Avi

    2014-01-01

    The effect of radio-frequency (RF) or low-frequency (LF) bias voltage on the formation of amorphous hydrogenated carbon (a-C:H) films was studied on silicon substrates with a low methane (CH 4 ) concentration (2–10 vol.%) in CH 4 +Ar mixtures. The bias substrate was applied either by RF (13.56 MHz) or by LF (150 kHz) power supply. The highest hardness values (∼18–22 GPa) with lower hydrogen content in the films (∼20 at.%) deposited at 10 vol.% CH 4 , was achieved by using the RF bias. However, the films deposited using the LF bias, under similar RF plasma generation power and CH 4 concentration (50 W and 10 vol.%, respectively), displayed lower hardness (∼6–12 GPa) with high hydrogen content (∼40 at.%). The structures analyzed by Fourier Transform Infrared (FTIR) and Raman scattering measurements provide an indication of trans-polyacetylene structure formation. However, its excessive formation in the films deposited by the LF bias method is consistent with its higher bonded hydrogen concentration and low level of hardness, as compared to the film prepared by the RF bias method. It was found that the effect of RF bias on the film structure and properties is stronger than the effect of the low-frequency (LF) bias under identical radio-frequency (RF) powered electrode and identical PECVD (plasma enhanced chemical vapor deposition) system configuration. (plasma technology)

  19. Bonding tungsten, W–Cu-alloy and copper with amorphous Fe–W alloy transition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Song, E-mail: wangsongrain@163.com [Laboratory of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, Beijing 100083 (China); Laboratory of Advanced Materials, Tsinghua University, Beijing 100084 (China); Ling, Yunhan, E-mail: yhling@mail.tsinghua.edu.cn [Laboratory of Advanced Materials, Tsinghua University, Beijing 100084 (China); Zhao, Pei [Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100039 (China); Zang, Nanzhi [Laboratory of Advanced Materials, Tsinghua University, Beijing 100084 (China); Wang, Jianjun [Laboratory of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, Beijing 100083 (China); Guo, Shibin [Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100039 (China); Zhang, Jun [Laboratory of Advanced Materials, Tsinghua University, Beijing 100084 (China); Xu, Guiying [Laboratory of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, Beijing 100083 (China)

    2013-05-15

    W/Cu graded materials are the leading candidate materials used as the plasma facing components in a fusion reactor. However, tungsten and copper can hardly be jointed together due to their great differences in physical properties such as coefficient of thermal expansion and melting point, and the lack of solid solubility between them. To overcome those difficulties, a new amorphous Fe–W alloy transitional coating and vacuum hot pressing (VHP) method were proposed and introduced in this paper. The morphology, composition and structure of the amorphous Fe–W alloy coating and the sintering interface of the specimens were analyzed by scanning electron microscopy (SEM), energy dispersive spectrometer (EDS) and X-ray diffraction (XRD). The thermal shock resistance of the bonded composite was also tested. The results demonstrated that amorphous structure underwent change from amorphous to nano grains during joining process, and the joined W/Cu composite can endued plasma thermal shock resistance with energy density more than 5.33 MW/m{sup 2}. It provides a new feasible technical to join refractory tungsten to immiscible copper with amorphous Fe–W alloy coating.

  20. Development of amorphous and nanocrystalline Al65Cu35-xZrx alloys by mechanical alloying

    International Nuclear Information System (INIS)

    Manna, I.; Chattopadhyay, P.P.; Banhart, F.; Fecht, H.J.

    2004-01-01

    Mechanical alloying of Al 65 Cu 35-x Zr x (x=5, 15 and 25 at.% Zr) elemental powder blends by planetary ball milling up to 50 h yields amorphous and/or nanocrystalline products. Microstructure of the milled product at different stages of milling has been characterized by X-ray diffraction, (XRD) high-resolution transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). Among the different alloys synthesized by mechanical alloying, Al 65 Cu 20 Zr 15 yields a predominantly amorphous product, while the other two alloys develop a composite microstructure comprising nanocrystalline and amorphous solid solutions in Al 65 Cu 10 Zr 25 and nano-intermetallic phase/compound in Al 65 Cu 30 Zr 5 , respectively. The genesis of solid-state amorphization in Al 65 Cu 20 Zr 15 and Al 65 Cu 10 Zr 25 is investigated

  1. Study of structural relaxation in amorphous alloys prepared by sputtering

    International Nuclear Information System (INIS)

    Habibi, S.; Banaee, N.; Majidy, S.

    2004-01-01

    Full text: We have prepared amorphous alloy of Al x Cu 1-x (with X= 93, 90, 80, 70, 30) using sputtering system. The rate of growth was 0.7 nm/sec. X-ray diffractometer was used to conform the amorphous nature of the prepared specimens. High temperature annealing can change amorphous to crystalline structure, while low temperature annealing may transform amorphous state to a more stable amorphous state via structural relaxation of the specimen and enhancing the properties of the alloys, such as mechanical ductility etc. Here we have annealed the alloys at temperatures 100, 150, 200, 250, 300 and 350 C for 1 hour. We observed that microhardness of the specimen increases with annealing and gets maximum value at 300 C. Our XRD experiments and also earlier Moessbauer studies show that while the average interatomic distances reduces due to annealing, structure remains amorphous

  2. Low temperature irradiation effects on iron-boron based amorphous metallic alloys

    International Nuclear Information System (INIS)

    Audouard, Alain.

    1983-01-01

    Three iron-boron amorphous alloys and the crystalline Fe 3 B alloy have been irradiated at liquid hydrogen temperature. 2,4 MeV electron irradiation induces the creation of point defects in the amorphous alloys as well as in the crystalline Fe 3 B alloy. These point defects can be assimilated to iron ''Frenkel pairs''. They have been characterized by determining their intrinsic electrical resistivity and their formation volume. The displacement threshold energy of iron atoms has also been determined. 10 B fission fragments induce, in these amorphous alloys, displacement cascades which lead to stable vacancy rich zones. This irradiation also leads to a structural disorder in relation with the presence of defects. 235 U fission fragments irradiation modifies drastically the structure of the amorphous alloys. The results have been interpreted on the basis of the coexistence of two opposite processes which induce local disorder and crystallisation respectively [fr

  3. Low temperature irradiation effects on iron boron based amorphous metallic alloys

    International Nuclear Information System (INIS)

    Audouard, A.

    1982-09-01

    Three Fe-B amorphous alloys (Fe 80 B 20 , Fe 27 Mo 2 B 20 and Fe 75 B 25 ) and the crystallized Fe 3 B alloy have been irradiated at the temperature of liquid hydrogen. Electron irradiation and irradiation by 10 B fission fragments induce point defects in amorphous alloys. These defects are characterized by an intrinsic resistivity and a formation volume. The threshold energy for the displacement of iron atoms has also been calculated. Irradiation by 235 U fission fragments induces some important structural modifications in the amorphous alloys [fr

  4. Amorphous Alloy: Promising Precursor to Form Nanoflowerpot

    Directory of Open Access Journals (Sweden)

    Guo Lan

    2014-01-01

    Full Text Available Nanoporous copper is fabricated by dealloying the amorphous Ti2Cu alloy in 0.03 M HF electrolyte. The pore and ligament sizes of the nanoporous copper can be readily tailored by controlling the dealloying time. The as-prepared nanoporous copper provides fine and uniform nanoflowerpots to grow highly dispersed Au nanoflowers. The blooming Au nanoflowers in the nanoporous copper flowerpots exhibit both high catalytic activity and stability towards the oxidation of glucose, indicating that the amorphous alloys are ideal precursors to form nanoflowerpot which can grow functional nanoflowers.

  5. Synthesis and crytallization of amorphous In-Te alloys

    International Nuclear Information System (INIS)

    Vengrenovich, R.D.; Lopatnyuk, I.A.; Mikhal'chenko, V.P.; Kasiyan, I.M.; Geshko, E.I.

    1988-01-01

    Tendency of Te-In alloys with indium content from 5 to 40 % to amorphization is investigated. It is marked that in this interval of concentrations the alloys have the tendency to subcooling even at cooling velocities equalling only 0.2-0.3 K/s. Maximal subcooling ΔT=70 deg takes place for the eutectic composition. Tendency of Te-In alloys to vitrification is explained by the character to interatomic interactions in a liquid, the interactions promote the formation of molecular clusters in it in cooling, that leads to fast increase of viscosity and to increase of T g amorphization temperature

  6. Communication: Surface-facilitated softening of ordinary and vapor-deposited glasses

    Science.gov (United States)

    Cubeta, Ulyana; Bhattacharya, Deepanjan; Sadtchenko, Vlad

    2017-08-01

    A common distinction between the ordinary glasses formed by melt cooling and the stable amorphous films formed by vapor deposition is the apparent mechanism of their devitrification. Using quasi-adiabatic, fast scanning calorimetry that is capable of heating rates in excess of 105 K s-1, we have investigated the softening kinetics of micrometer-scale, ordinary glass films of methylbenzene and 2-propanol. At the limit of high heating rates, the transformation mechanism of ordinary glasses is identical to that of their stable vapor-deposited counterparts. In both cases, softening is likely to begin at the sample surface and progress into its bulk via a transformation front. Furthermore, such a surface-facilitated mechanism complies with zero-order, Arrhenius rate law. The activation energy barriers for the softening transformation imply that the kinetics must be defined, at least in part, by the initial thermodynamic and structural state of the samples.

  7. Heteroepitaxial growth of 3-5 semiconductor compounds by metal-organic chemical vapor deposition for device applications

    Science.gov (United States)

    Collis, Ward J.; Abul-Fadl, Ali

    1988-01-01

    The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices.

  8. A study of the diffusion mechanisms in amorphous metallic alloys: diffusion and diffusion under high pressure in an amorphous NiZr alloy; Contribution a l`etude des mecanismes de transport dans les materiaux metalliques amorphes: diffusion et diffusion sous pression dans NiZr amorphe

    Energy Technology Data Exchange (ETDEWEB)

    Grandjean, A.

    1996-03-01

    The aim of this work is a better understanding of the diffusion mechanism in amorphous metallic alloys. Then interdiffusion and hafnium diffusion in amorphous NiZr alloy have been studied. Samples used are made by sputtering co-deposition under vacuum and are well relaxed before the diffusion measurements. The time evolution of resistivity during annealing due to the decay of a composition modulated film has been measured and from this change in resistivity interdiffusion coefficients have been determined. Dependence of Hf diffusion on temperature and pressure has been studied using (SIMS). In this two cases, the diffusion process obeys an Arrhenius law and gives an activation energy of 1.33 eV for interdiffusion, and 0.76 eV for Hf diffusion. An effect of pressure on Hf diffusion has been found leading to an activation volume of 8.5 angstrom{sup 3}. Thanks to these results, two approaches of the diffusion mechanisms in these systems have been proposed. The first comes from a comparison with the diffusion mechanisms in crystalline metals, that is to say by point defects. The second is an hypothesis of collective motions in these non crystalline alloys. (author).

  9. Preparation of hydrogenated amorphous carbon films using a microsecond-pulsed DC capacitive-coupled plasma chemical vapor deposition system operated at high frequency up to 400 kHz

    Science.gov (United States)

    Mamun, Md Abdullah Al; Furuta, Hiroshi; Hatta, Akimitsu

    2018-06-01

    Hydrogenated amorphous carbon (a-C:H) films are deposited on silicon (Si) substrates using a high-repetition microsecond-pulsed DC plasma chemical vapor deposition (CVD) system from acetylene (C2H2) at a gas pressure of 15 Pa inside a custom-made vacuum chamber. The plasma discharge characteristics, hydrocarbon species, and the microstructure of the resulting films are examined at various pulse repetition rates from 50 to 400 kHz and a fixed duty cycle of 50%. The optical emission spectra confirmed the increase in electron excitation energy from 1.09 to 1.82 eV and the decrease in the intensity ratio of CH/C2 from 1.04 to 0.75 with increasing pulse frequency, indicating the enhanced electron impact dissociation of C2H2 gas. With increasing pulse frequency, the deposition rate gradually increased, reaching a maximum rate of 60 nm/min at 200 kHz, after which a progressive decrease was noted, whereas the deposition area was almost uniform for all the prepared films. Clear trends of increasing sp3 content (amorphization) and decreasing hydrogen (H) content in the films were observed as the pulse repetition rate increased, while most of the hydrogen atoms bonded to carbon atoms by sp3 hybridization rather than by sp2 hybridization.

  10. Effect of chromium and phosphorus on the physical properties of iron and titanium-based amorphous metallic alloy films

    Science.gov (United States)

    Distefano, S.; Rameshan, R.; Fitzgerald, D. J.

    1991-01-01

    Amorphous iron and titanium-based alloys containing various amounts of chromium, phosphorus, and boron exhibit high corrosion resistance. Some physical properties of Fe and Ti-based metallic alloy films deposited on a glass substrate by a dc-magnetron sputtering technique are reported. The films were characterized using differential scanning calorimetry, stress analysis, SEM, XRD, SIMS, electron microprobe, and potentiodynamic polarization techniques.

  11. Corrosion behavior of amorphous and crystalline Cu50Ti50 and Cu50Zr50 alloys

    International Nuclear Information System (INIS)

    Naka, M.; Hoshimoto, K.; Masumoto, T.

    1978-01-01

    Corrosion rates and anodic polarization curves of amorphous and crystalline Cu 50 Ti 50 and Cu 50 Zr 50 alloys have been examined in various acidic, neutral and alkaline solutions. The amorphous alloys are very stable in acidic and alkaline solutions, but unstable in agressive chloride solutions. The corrosion resistance of these amorphous alloys is higher than that of the crystallized alloys. The high corrosion resistance of amorphous alloys is attributable to the high chemical homogeneity of amorphous alloys without localized crystalline defects such as precipitates, segregates, grain boundaries, etc. Metalloid elements play an important role in the corrosion behavior of amorphous alloys; the addition of phosphorus to amorphous Cu-Ti alloy greatly increases the corrosion resistance, even in 1N HCl. (Auth.)

  12. The effect of grooves in amorphous substrates on the orientation of metal deposits. I - Carbon substrates

    Science.gov (United States)

    Anton, R.; Poppa, H.; Flanders, D. C.

    1982-01-01

    The graphoepitaxial alignment of vapor-deposited discrete metal crystallites is investigated in the nucleation and growth stages and during annealing by in situ UHV/TEM techniques. Various stages of nucleation, growth and coalescence of vapor deposits of Au, Ag, Pb, Sn, and Bi on amorphous, topographically structured C substrates are analyzed by advanced dark-field techniques to detect preferred local orientations. It is found that the topography-induced orientation of metal crystallites depends strongly on their mobility and their respective tendency to develop pronounced crystallographic shapes. Lowering of the average surface free energies and increasing the crystallographic surface energy anisotropies cause generally improved graphoepitaxial alignments.

  13. Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

    Science.gov (United States)

    Xing, G. C.; Bachmann, Klaus J.; Posthill, J. B.; Timmons, M. L.

    1993-01-01

    The epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube organometallic chemical vapor deposition (OMCVD) is reported. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology was achieved for x less than or equal to 0.05. Transmission electron microscopy (TEM) micrographs of these alloys show specular epitaxy and the absence of microstructural defects indicating a defect density of less than 10(exp 7) cm(sup -2). Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10(exp 18) to 2 x 10(exp 17) cm(sup -3). Absorption measurements indicate that the band tailing in the absorption spectra of the alloy was shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material. Diodes fabricated from the n(+)-GaP/p-ZnSiP2-ZnGeP2-Ge heterostructure at x = 0.05 have a reverse break-down voltage of -10.8 V and a reverse saturation current density of approximately 6 x 10(exp -8) A/sq cm.

  14. Structural models for amorphous transition metal binary alloys

    International Nuclear Information System (INIS)

    Ching, W.Y.; Lin, C.C.

    1976-01-01

    A dense random packing of 445 hard spheres with two different diameters in a concentration ratio of 3 : 1 was hand-built to simulate the structure of amorphous transition metal-metalloid alloys. By introducing appropriate pair potentials of the Lennard-Jones type, the structure is dynamically relaxed by minimizing the total energy. The radial distribution functions (RDF) for amorphous Fe 0 . 75 P 0 . 25 , Ni 0 . 75 P 0 . 25 , Co 0 . 75 P 0 . 25 are obtained and compared with the experimental data. The calculated RDF's are resolved into their partial components. The results indicate that such dynamically constructed models are capable of accounting for some subtle features in the RDF of amorphous transition metal-metalloid alloys

  15. The influence of charge effect on the growth of hydrogenated amorphous silicon by the hot-wire chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Q.; Nelson, B.P.; Iwaniczko, E.; Mahan, A.H.; Crandall, R.S.; Benner, J. [National Renewable Energy Lab., Golden, CO (United States)

    1998-09-01

    The authors observe at lower substrate temperatures that the scatter in the dark conductivity on hydrogenated amorphous silicon (a-Si:H) films grown on insulating substrates (e.g., Corning 7059 glass) by the hot-wire chemical vapor deposition technique (HWCVD) can be five orders of magnitude or more. This is especially true at deposition temperatures below 350 C. However, when the authors grow the same materials on substrates with a conductive grid, virtually all of their films have acceptable dark conductivity (< 5 {times} 10{sup {minus}10} S/cm) at all deposition temperatures below 425 C. This is in contrast to only about 20% of the materials grown in this same temperature range on insulating substrates having an acceptable dark conductivity. The authors estimated an average energy of 5 eV electrons reaching the growing surface in vacuum, and did additional experiments to see the influence of both the electron flux and the energy of the electrons on the film growth. Although these effects do not seem to be important for growing a-Si:H by HWCVD on conductive substrates, they help better understand the important parameters for a-Si:H growth, and thus, to optimize these parameters in other applications of HWCVD technology.

  16. Long-term stable water vapor permeation barrier properties of SiN/SiCN/SiN nanolaminated multilayers grown by plasma-enhanced chemical vapor deposition at extremely low pressures

    International Nuclear Information System (INIS)

    Choi, Bum Ho; Lee, Jong Ho

    2014-01-01

    We investigated the water vapor permeation barrier properties of 30-nm-thick SiN/SiCN/SiN nanolaminated multilayer structures grown by plasma enhanced chemical vapor deposition at 7 mTorr. The derived water vapor transmission rate was 1.12 × 10 −6 g/(m 2 day) at 85 °C and 85% relative humidity, and this value was maintained up to 15 000 h of aging time. The X-ray diffraction patterns revealed that the nanolaminated film was composed of an amorphous phase. A mixed phase was observed upon performing high resolution transmission electron microscope analysis, which indicated that a thermodynamically stable structure was formed. It was revealed amorphous SiN/SiCN/SiN multilayer structures that are free from intermixed interface defects effectively block water vapor permeation into active layer

  17. Surface and corrosion characteristics of carbon plasma implanted and deposited nickel-titanium alloy

    International Nuclear Information System (INIS)

    Poon, R.W.Y.; Liu, X.Y.; Chung, C.Y.; Chu, P.K.; Yeung, K.W.K.; Lu, W.W.; Cheung, K.M.C.

    2005-01-01

    Nickel-titanium shape memory alloys (NiTi) are potentially useful in orthopedic implants on account of their super-elastic and shape memory properties. However, the materials are prone to surface corrosion and the most common problem is out-diffusion of harmful Ni ions from the substrate into body tissues and fluids. In order to improve the corrosion resistance and related surface properties, we used the technique of plasma immersion ion implantation and deposition to deposit an amorphous hydrogenated carbon coating onto NiTi and implant carbon into NiTi. Both the deposited amorphous carbon film and carbon plasma implanted samples exhibit much improved corrosion resistances and surface mechanical properties and possible mechanisms are suggested

  18. Complete long-term corrosion protection with chemical vapor deposited graphene

    DEFF Research Database (Denmark)

    Yu, Feng; Camilli, Luca; Wang, Ting

    2018-01-01

    Despite numerous reports regarding the potential of graphene for corrosion protection, examples of chemical vapor deposited (CVD) graphene-based anticorrosive coatings able to provide long-term protection (i.e. several months) of metals have so far been absent. Here, we present a polymer-graphene......Despite numerous reports regarding the potential of graphene for corrosion protection, examples of chemical vapor deposited (CVD) graphene-based anticorrosive coatings able to provide long-term protection (i.e. several months) of metals have so far been absent. Here, we present a polymer......-graphene hybrid coating, comprising two single layers of CVD graphene sandwiched by three layers of polyvinyl butyral, which provides complete corrosion protection of commercial aluminum alloys even after 120 days of exposure to simulated seawater. The essential role played by graphene in the hybrid coating...

  19. Silicon-substituted hydroxyapatite coating with Si content on the nanotube-formed Ti–Nb–Zr alloy using electron beam-physical vapor deposition

    International Nuclear Information System (INIS)

    Jeong, Yong-Hoon; Choe, Han-Cheol; Brantley, William A.

    2013-01-01

    The purpose of this study was to investigate the electrochemical characteristics of silicon-substituted hydroxyapatite coatings on the nanotube-formed Ti–35Nb–10Zr alloy. The silicon-substituted hydroxyapatite (Si–HA) coatings on the nanotube structure were deposited by electron beam-physical vapor deposition and anodization methods, and biodegradation properties were analyzed by potentiodynamic polarization and electrochemical impedance spectroscopy measurement. The surface characteristics were analyzed by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction (XRD). The Si–HA layers were deposited with rough features having highly ordered nanotube structures on the titanium alloy substrate. The thickness of the Si–HA coating was less than that of the HA coating. The XRD results confirmed that the Si–HA coating on the nanotube structure consisted of TiO 2 anatase, TiO 2 rutile, hydroxyapatite, and calcium phosphate silicate. The Si–HA coating surface exhibited lower I corr than the HA coating, and the polarization resistance was increased by substitution of silicon in hydroxyapatite. - Highlights: • Silicon substituted hydroxyapatite (Si–HA) was coated on nanotubular titanium alloy. • The Si–HA coating thickness was less than single hydroxyapatite (HA) coating. • Si–HA coatings consisted of TiO 2 , HA, and Ca 5 (PO 4 ) 2 SiO 4 . • Polarization resistance of the coating was increased by Si substitution in HA

  20. Elastic characteristics and microplastic deformation of amorphous alloys on iron base

    International Nuclear Information System (INIS)

    Pol'dyaeva, G.P.; Zakharov, E.K.; Ovcharov, V.P.; Tret'yakov, B.N.

    1983-01-01

    Investigation results of elasticity and microplasticity properties (modulus of normal elasticity E, elasticity limit σsub(0.01) and yield limit σsub(0.2)) of three amorphous alloys on iron base Fe 80 B 20 , Fe 70 Cr 10 B 20 and Fe 70 Cr 5 Ni 5 B 20 are given. Amorphous band of the alloys is obtained using the method of melt hardening. It is shown that amorphous alloys on iron base possess high elasticity and yield limits and hardness and are very perspective for the use as spring materials

  1. Time-to-failure analysis of 5 nm amorphous Ru(P) as a copper diffusion barrier

    International Nuclear Information System (INIS)

    Henderson, Lucas B.; Ekerdt, John G.

    2009-01-01

    Evaluation of chemical vapor deposited amorphous ruthenium-phosphorous alloy as a copper interconnect diffusion barrier is reported. Approximately 5 nm-thick Ru(P) and TaN films in Cu/Ru(P)/SiO 2 /p-Si and Cu/TaN/SiO 2 /p-Si stacks are subjected to bias-temperature stress at electric fields from 2.0 MV/cm to 4.0 MV/cm and temperatures from 200 deg. C to 300 deg. C . Time-to-failure measurements suggest that chemical vapor deposited Ru(P) is comparable to physical vapor deposited TaN in preventing Cu diffusion. The activation energy of failure for stacks using Ru(P) as a liner is determined to be 1.83 eV in the absence of an electric field. Multiple models of dielectric failure, including the E and Schottky-type √E models indicate that Ru(P) is acceptable for use as a diffusion barrier at conditions likely in future technology generations

  2. Crystallization kinetics and magnetic properties of FeSiCr amorphous alloy powder cores

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Hu-ping [School of Logistics Engineering, Wuhan University of Technology, Wuhan 430063 (China); Wang, Ru-wu, E-mail: ruwuwang@hotmail.com [National Engineering Research Center For Silicon Steel, Wuhan 430080 (China); College of Materials Science and Metallurgical Engineering, Wuhan University of Science and Technology, Wuhan 430081 (China); Wei, Ding [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Zeng, Chun [National Engineering Research Center For Silicon Steel, Wuhan 430080 (China)

    2015-07-01

    The crystallization kinetics of FeSiCr amorphous alloy, characterized by the crystallization activation energy, Avrami exponent and frequency factor, was studied by non-isothermal differential scanning calorimetric (DSC) measurements. The crystallization activation energy and frequency factor of amorphous alloy calculated from Augis–Bennett model were 476 kJ/mol and 5.5×10{sup 18} s{sup −1}, respectively. The Avrami exponent n was calculated to be 2.2 from the Johnson–Mehl–Avrami (JMA) equation. Toroid-shaped Fe-base amorphous powder cores were prepared from the commercial FeSiCr amorphous alloy powder and subsequent cold pressing using binder and insulation. The characteristics of FeSiCr amorphous alloy powder and the effects of compaction pressure and insulation content on the magnetic properties, i.e., effective permeability μ{sub e}, quality factor Q and DC-bias properties of FeSiCr amorphous alloy powder cores, were investigated. The FeSiCr amorphous alloy powder cores exhibit a high value of quality factor and a stable permeability in the frequency range up to 1 MHz, showing superior DC-bias properties with a “percent permeability” of more than 82% at H=100 Oe. - Highlights: • The crystallization kinetics of FeSiCr amorphous alloy was investigated. • The FeSiCr powder cores exhibit a high value of Q and a stable permeability. • The FeSiCr powder cores exhibit superior DC-bias properties.

  3. Porosity and mechanical properties of amorphous alloys

    International Nuclear Information System (INIS)

    Betekhtin, V.I.; Kadomtsev, A.G.; Amosova, O.V.

    2003-01-01

    The obtained experimental data on the effect of the inherent submicroporosity and its change under impact of high hydrostatic pressure or annealing on the strength, microdestruction, embrittlement temperature, the first crystallization stage and peculiarities of the surface crystallization of the amorphous alloys are analyzed. The conclusion is made on the basis of the studies on the peculiarities of the voluminous and surface crystallization of the Fe 56 Co 24 Si 5 B 15 , Fe 78 Ni 2 Si 8 B 12 , Fe 85 B 15 , Fe 58 Ni 20 Si 9 B 13 amorphous alloys that the increase in the inherent submicroporosity is one of the essential factors facilitating crystallization [ru

  4. MgB2 thin films by hybrid physical-chemical vapor deposition

    International Nuclear Information System (INIS)

    Xi, X.X.; Pogrebnyakov, A.V.; Xu, S.Y.; Chen, K.; Cui, Y.; Maertz, E.C.; Zhuang, C.G.; Li, Qi; Lamborn, D.R.; Redwing, J.M.; Liu, Z.K.; Soukiassian, A.; Schlom, D.G.; Weng, X.J.; Dickey, E.C.; Chen, Y.B.; Tian, W.; Pan, X.Q.; Cybart, S.A.; Dynes, R.C.

    2007-01-01

    Hybrid physical-chemical vapor deposition (HPCVD) has been the most effective technique for depositing MgB 2 thin films. It generates high magnesium vapor pressures and provides a clean environment for the growth of high purity MgB 2 films. The epitaxial pure MgB 2 films grown by HPCVD show higher-than-bulk T c due to tensile strain in the films. The HPCVD films are the cleanest MgB 2 materials reported, allowing basic research, such as on magnetoresistance, that reveals the two-band nature of MgB 2 . The carbon-alloyed HPCVD films demonstrate record-high H c2 values promising for high magnetic field applications. The HPCVD films and multilayers have enabled the fabrication of high quality MgB 2 Josephson junctions

  5. Structural and optical characterization of self-assembled Ge nanocrystal layers grown by plasma-enhanced chemical vapor deposition

    NARCIS (Netherlands)

    Saeed, S.; Buters, F.; Dohnalova, K.; Wosinski, L.; Gregorkiewicz, T.

    2014-01-01

    We present a structural and optical study of solid-state dispersions of Ge nanocrystals prepared by plasma-enhanced chemical vapor deposition. Structural analysis shows the presence of nanocrystalline germanium inclusions embedded in an amorphous matrix of Si-rich SiO2. Optical characterization

  6. Corrosion resistance of Fe-based amorphous alloys

    International Nuclear Information System (INIS)

    Botta, W.J.; Berger, J.E.; Kiminami, C.S.; Roche, V.; Nogueira, R.P.; Bolfarini, C.

    2014-01-01

    Highlights: ► We report corrosion properties of Fe-based amorphous alloys in different media. ► The Cr-containing alloys had corrosion resistance close to that of Pt in all media. ► The wide range of electrochemical stability is relevant in many industrial domains. -- Abstract: Fe-based amorphous alloys can be designed to present an attractive combination of properties with high corrosion resistance and high mechanical strength. Such properties are clearly adequate for their technological use as coatings, for example, in steel pipes. In this work, we studied the corrosion properties of amorphous ribbons of the following Fe-based compositions: Fe 66 B 30 Nb 4 , [(Fe 0.6 Co 0.4 ) 0.75 B 0.2 Si 0.05 ] 96 Nb 4 , [(Fe 0.7 Co 0.3 ) 0.75 B 0.2 Si 0.05 ] 96 Nb 4 , Fe 56 Cr 23 Ni 5.7 B 16 , Fe 53 Cr 22 Ni 5.6 B 19 and Fe 50 Cr 22 Ni 5.4 B 23 . The ribbons were obtained by rapid solidification using the melt-spinning process, and were characterized by X-ray diffraction (XRD), differential scanning calorimetry (DSC) and optical (OM) and scanning electron microscopy (SEM). The corrosion properties were evaluated by corrosion potential survey and potentiodynamic polarization. The Cr containing alloys, that is the FeCrNiB type of alloys, showed the best corrosion resistance properties with the formation of a stable passive film that ensured a very large passivation plateau

  7. Vapor deposition of tantalum and tantalum compounds

    International Nuclear Information System (INIS)

    Trkula, M.

    1996-01-01

    Tantalum, and many of its compounds, can be deposited as coatings with techniques ranging from pure, thermal chemical vapor deposition to pure physical vapor deposition. This review concentrates on chemical vapor deposition techniques. The paper takes a historical approach. The authors review classical, metal halide-based techniques and current techniques for tantalum chemical vapor deposition. The advantages and limitations of the techniques will be compared. The need for new lower temperature processes and hence new precursor chemicals will be examined and explained. In the last section, they add some speculation as to possible new, low-temperature precursors for tantalum chemical vapor deposition

  8. 21. Colloquium on metallurgy. Amorphous alloys and materials

    International Nuclear Information System (INIS)

    1979-01-01

    Twenty-two papers were presented at the 21st colloquium on metallurgy of amorphous alloys and materials. They deal with the applications, the various types, the preparation methods, the structure, the magnetic and thermodynamic properties and the structure defects of the amorphous materials [fr

  9. Electrical and Magnetic Properties of Binary Amorphous Transition Metal Alloys.

    Science.gov (United States)

    Liou, Sy-Hwang

    The electrical, superconductive and magnetic properties of several binary transition metal amorphous and metastable crystalline alloys, Fe(,x)Ti(,100-x) (30 (LESSTHEQ) x (LESSTHEQ) 100), Fe(,x)Zr(,100-x) (20 (LESSTHEQ) x (LESSTHEQ) 93), Fe(,x)Hf(,100-x) (20 (LESSTHEQ) x (LESSTHEQ) 100), Fe(,x)Nb(,100 -x) (22 (LESSTHEQ) x (LESSTHEQ) 85), Ni(,x)Nb(,100-x) (20 (LESSTHEQ) x (LESSTHEQ) 80), Cu(,x)Nb(,100-x) (10 (LESSTHEQ) x (LESSTHEQ) 90) were studied over a wide composition range. Films were made using a magnetron sputtering system, and the structure of the films was investigated by energy dispersive x-ray diffraction. The composition region of each amorphous alloys system was determined and found in good agreement with a model proposed by Egami and Waseda. The magnetic properties and hyperfine interactions in the films were investigated using a conventional Mossbauer spectrometer and a ('57)Co in Rh matrix source. In all Fe-early transition metal binary alloys systems, Fe does not retain its moment in the low iron concentration region and the result is that the critical concentration for magnetic order (x(,c)) is much larger than anticipated from percolation considerations. A direct comparison between crystalline alloys and their amorphous counterparts of the same composition illustrate no clear correlation between crystalline and amorphous states. Pronounced discontinuities in the magnetic properties with variation in Fe content of all Fe-early transition metal alloys at phase boundaries separating amorphous and crystalline states have been observed. This is caused by the differences in the atomic arrangement and the electronic structure between crystalline and amorphous solids. The temperature dependence of resistivity, (rho)(T), of several binary amorphous alloys of Fe-TM (where TM = Ti, Zr, Hf, Nb etc.) has been studied from 2K to 300K. The Fe-poor (x x(,c)) samples have distinctive differences in (rho)(T) at low temperature (below 30K). All the magnetic samples

  10. Low-emissivity coating of amorphous diamond-like carbon/Ag-alloy multilayer on glass

    International Nuclear Information System (INIS)

    Chiba, Kiyoshi; Takahashi, Toshiyuki; Kageyama, Takashi; Oda, Hironori

    2005-01-01

    Transparent low-emissivity (low-e) coatings comprising dielectrics of amorphous diamond-like carbon (DLC) and Ag-alloy films are investigated. All films have been prepared by dc magnetron sputtering. An index of refraction of the DLC film deposited in a gas mixture of Ar/H 2 (4%) shows n = 1.80 + 0.047i at 500 nm wavelength. A multilayer stack of DLC (70 nm thick)/Ag 87.5 Cu 12.5 -alloy (10 nm)/DLC (140 nm)/Ag 87.5 Cu 12.5 -alloy (10 nm)/DLC (70 nm) has revealed clear interference spectra with spectra selectivity. This coating performs low emittance less than 0.1 for black body radiation at 297 K, exhibiting a transparent heat mirror property embedded in DLC films

  11. Elastic characteristics and microplastic deformation of amorphous alloys on iron base

    Energy Technology Data Exchange (ETDEWEB)

    Pol' dyaeva, G.P.; Zakharov, E.K.; Ovcharov, V.P.; Tret' yakov, B.N. (Tsentral' nyj Nauchno-Issledovatel' skij Inst. Chernoj Metallurgii, Moscow (USSR))

    1983-01-01

    Investigation results of elasticity and microplasticity properties (modulus of normal elasticity E, elasticity limit sigmasub(0.01) and yield limit sigmasub(0.2)) of three amorphous alloys on iron base Fe/sub 80/B/sub 20/, Fe/sub 70/Cr/sub 10/B/sub 20/ and Fe/sub 70/Cr/sub 5/Ni/sub 5/B/sub 20/ are given. Amorphous band of the alloys is obtained using the method of melt hardening. It is shown that amorphous alloys on iron base possess high elasticity and yield limits and hardness and are very perspective for the use as spring materials.

  12. Amorphous uranium alloy and use thereof

    International Nuclear Information System (INIS)

    Gambino, R.J.; McElfresh, M.W.; McGuire, T.R.; Plaskett, T.S.

    1991-01-01

    An amorphous alloy containing uranium and a member selected from the group N, P, As, Sb, Bi, S, Se, Te, Po and mixtures thereof; and use thereof for storage medium, light modulator or optical isolator. (author) figs

  13. Silicon-substituted hydroxyapatite coating with Si content on the nanotube-formed Ti–Nb–Zr alloy using electron beam-physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Yong-Hoon [Division of Restorative, Prosthetic and Primary Care Dentistry, College of Dentistry, The Ohio State University, 305 W. 12th Ave., Columbus, OH (United States); Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Brantley, William A. [Division of Restorative, Prosthetic and Primary Care Dentistry, College of Dentistry, The Ohio State University, 305 W. 12th Ave., Columbus, OH (United States)

    2013-11-01

    The purpose of this study was to investigate the electrochemical characteristics of silicon-substituted hydroxyapatite coatings on the nanotube-formed Ti–35Nb–10Zr alloy. The silicon-substituted hydroxyapatite (Si–HA) coatings on the nanotube structure were deposited by electron beam-physical vapor deposition and anodization methods, and biodegradation properties were analyzed by potentiodynamic polarization and electrochemical impedance spectroscopy measurement. The surface characteristics were analyzed by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction (XRD). The Si–HA layers were deposited with rough features having highly ordered nanotube structures on the titanium alloy substrate. The thickness of the Si–HA coating was less than that of the HA coating. The XRD results confirmed that the Si–HA coating on the nanotube structure consisted of TiO{sub 2} anatase, TiO{sub 2} rutile, hydroxyapatite, and calcium phosphate silicate. The Si–HA coating surface exhibited lower I{sub corr} than the HA coating, and the polarization resistance was increased by substitution of silicon in hydroxyapatite. - Highlights: • Silicon substituted hydroxyapatite (Si–HA) was coated on nanotubular titanium alloy. • The Si–HA coating thickness was less than single hydroxyapatite (HA) coating. • Si–HA coatings consisted of TiO{sub 2}, HA, and Ca{sub 5}(PO{sub 4}){sub 2}SiO{sub 4}. • Polarization resistance of the coating was increased by Si substitution in HA.

  14. Oxidation kinetics of amorphous AlxZr1−x alloys

    International Nuclear Information System (INIS)

    Weller, K.; Wang, Z.M.; Jeurgens, L.P.H.; Mittemeijer, E.J.

    2016-01-01

    The oxidation kinetics of amorphous Al x Zr 1−x alloys (solid solution) has been studied as function of the alloy composition (0.26 ≤ x ≤ 0.68) and the oxidation temperature (350 °C ≤ T ≤ 400 °C; at constant pO 2  = 1 × 10 5  Pa) by a combinatorial approach using spectroscopic ellipsometry (SE), Auger electron spectroscopy (AES) depth profiling, transmission electron microscopy (TEM) and X-ray diffraction (XRD) analysis. Thermal oxidation of the am-Al x Zr 1−x alloys results in the formation of an amorphous oxide overgrowth with a thermodynamically preferred singular composition, corresponding to a constant Al ox /Zr ox ratio of 0.5. Both the solubility and the diffusivity of oxygen in the am-Al x Zr 1−x alloy substrate increase considerably with increasing Zr content, in particular for Zr contents above 49 at.% Zr. Strikingly, the oxidation kinetics exhibit a transition from parabolic oxide growth kinetics for Al-rich am-Al x Zr 1−x alloys (x ≥ 0.51) to linear oxide growth kinetics for Zr-rich am-Al x Zr 1−x alloys (x < 0.35). The underlying oxidation mechanism is discussed. It is concluded that the oxidation kinetics of the amorphous Al x Zr 1−x alloys for 0.26 ≤ x ≤ 0.68 and 350 °C ≤ T ≤ 400 °C are governed by: (i) the atomic mobilities of O and Al in the alloy substrate at the reacting oxide/alloy interface, (ii) the solubility of O in the substrate and (iii) the compositional constraint due to the thermodynamically preferred formation of an amorphous oxide phase of singular composition.

  15. Stability of (Fe-Tm-B) amorphous alloys: relaxation and crystallization phenomena

    International Nuclear Information System (INIS)

    Zemcik, T.

    1994-01-01

    Fe-Tm-B base (TM = transition metal) amorphous alloys (metallic glasses) are thermodynamically metastable. This limits their use as otherwise favourable materials, e.g. magnetically soft, corrosion resistant and mechanically firm. By analogy of the mechanical strain-stress dependence, at a certain degree of thermal activation the amorphous structure reaches its limiting state where it changes its character and physical properties. Relaxation and early crystallization processes in amorphous alloys, starting already around 100 C, are reviewed involving subsequently stress relief, free volume shrinking, topological and chemical ordering, pre-crystallization phenomena up to partial (primary) crystallization. Two diametrically different examples are demonstrated from among the soft magnetic materials: relaxation and early crystallization processes in the Fe-Co-B metallic glasses and controlled crystallization of amorphous ribbons yielding rather modern nanocrystalline ''Finemet'' alloys where late relaxation and pre-crystallization phenomena overlap when forming extremely dispersive and fine-grained nanocrystals-in-amorphous-sauce structure. Moessbauer spectroscopy seems to be unique for magnetic and phase analysis of such complicated systems. (orig.)

  16. Effects of gas residence time of CH4/H2 on sp2 fraction of amorphous carbon films and dissociated methyl density during radical-injection plasma-enhanced chemical vapor deposition

    Science.gov (United States)

    Sugiura, Hirotsugu; Jia, Lingyun; Kondo, Hiroki; Ishikawa, Kenji; Tsutsumi, Takayoshi; Hayashi, Toshio; Takeda, Keigo; Sekine, Makoto; Hori, Masaru

    2018-06-01

    Quadruple mass spectrometric measurements of CH3 density during radical-injection plasma-enhanced chemical vapor deposition to consider the sp2 fraction of amorphous carbon (a-C) films were performed. The sp2 fraction of the a-C films reached a minimum of 46%, where the CH3 density was maximum for a residence time of 6 ms. The sp2 fraction of the a-C films was tailored with the gaseous phase CH3 density during the deposition. This knowledge is useful for understanding the formation mechanism of bonding structures in the a-C films, which enables the precise control of their electronic properties.

  17. Moessbauer spectra studied of spin-wave excitation for amorphous alloys

    International Nuclear Information System (INIS)

    Huang Zhigao

    1992-01-01

    The average hyperfine fields of amorphous Fe 70 Co 20 Zr 10 , Fe 80 Co 10 Zr 10 and Fe 86 Co 4 -Zr 10 alloys at different temperature were measured by the Moessbauer technique. According to Bloch's T 3/2 relation, spin-wave excitations of above amorphous alloys were studied and their B 3/2 values were found to be 0.40 +- 0.02, 0.45 +- 0.02 and 0.88 +- 0.04, respectively. Comparing the B 3/2 values of crystals, a-Fe-(Co, Ni)-ME, a-Fe-(Cr, Mn, W)-ME and a-Fe-B or TM-Zr invar alloys, the obvious difference among them was observed. Above results can be explained well by the exchange coupling fluctuation and the disorder of spatial arrangement. In this work, the difference between the stiffness coefficients obtained from the inelastic neutron scattering and the magnetization measurements for amorphous Invar alloys was also explained

  18. Ion vapor deposition and its application

    International Nuclear Information System (INIS)

    Bollinger, H.; Schulze, D.; Wilberg, R.

    1981-01-01

    Proceeding from the fundamentals of ion vapor deposition the characteristic properties of ion-plated coatings are briefly discussed. Examples are presented of successful applications of ion-plated coatings such as coatings with special electrical and dielectric properties, coatings for corrosion prevention, and coatings for improving the surface properties. It is concluded that ion vapor deposition is an advantageous procedure in addition to vapor deposition. (author)

  19. TEM study of amorphous alloys produced by ion implantation

    International Nuclear Information System (INIS)

    Johnson, E.; Grant, W.A.; Wohlenberg, P.; Hansen, P.; Chadderton, L.T.

    1978-01-01

    Ion implantation is a technique for introducing foreign elements into surface layers of solids. Ions, as a suitably accelerated beam, penetrate the surface, slow down by collisions with target atoms to produce a doped layer. This non-equilibrium technique can provide a wide range of alloys without the restrictions imposed by equilibrium phase diagrams. This paper reports on the production of some amorphous transition metal-metalloid alloys by implantation. Thinned foils of Ni, Fe and stainless steel were implanted at room temperature with Dy + and P + ions at doses between 10 13 - 10 17 ions/cm 2 at energies of 20 and 40 keV respectively. Transmission electron microscopy and selected area diffraction analysis were used to investigate the implanted specimens. Radial diffracted intensity measurements confirmed the presence of an amorphous implanted layer. The peak positions of the maxima are in good agreement with data for similar alloys produced by conventional techniques. Only certain ion/target combinations produce these amorphous layers. Implantations at doses lower than those needed for amorphization often result in formation of new crystalline phases such as an h.c.p. phase in nickel and a b.c.c. phase in stainless steel. (Auth.)

  20. Indentation creep behaviors of amorphous Cu-based composite alloys

    Science.gov (United States)

    Song, Defeng; Ma, Xiangdong; Qian, Linfang

    2018-04-01

    This work reports the indentation creep behaviors of two Si2Zr3/amorphous Cu-based composite alloys utilizing nanoindentation technique. By analysis with Kelvin model, the retardation spectra of alloys at different positions, detached and attached regions to the intermetallics, were deduced. For the indentation of detached regions to Si2Zr3 intermetallics in both alloys, very similarity in creep displacement can be observed and retardation spectra show a distinct disparity in the second retardation peak. For the indentation of detached regions, the second retardation spectra also display distinct disparity. At both positions, the retardation spectra suggest that Si elements may lead to the relatively dense structure in the amorphous matrix and to form excessive Si2Zr3 intermetallics which may deteriorate the plastic deformation of current Cu-based composite alloys.

  1. Tribological properties of nitrogen-containing amorphous carbon film produced by dc plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Zhang Wei; Wazumi, Koichiro; Tanaka, Akihiro; Koga, Yoshinori

    2003-01-01

    The nitrogen-contained amorphous carbon (a-C:N) films were deposited in a dc plasma chemical vapor deposition system with different substrate bias voltages. The structural, mechanical, and tribological properties of the a-C:N films were investigated. The influence of the bias voltage on the tribological behaviors of the a-C:N films was evaluated under various environments (dry air, O 2 , N 2 , and vacuum) using a ball-on-disk friction tester. It showed that the sp 3 C and hydrogen concentration of the a-C:N films decreases with increasing the bias voltage. However, the nitrogen concentration increases with increasing the bias voltage. As a result, the hardness and internal stress decrease and the critical load for fracturing increases as the substrate bias increases. For the tribological properties of the a-C:N films, the friction coefficient of the films slightly decreases in the environments of N 2 , O 2 , or dry air, but increases slightly in the vacuum environment by increasing the bias voltage. It indicates that the incorporated nitrogen in the a-C:N films would decrease the friction coefficient of the films in N 2 or O 2 environments, but slightly increases the friction coefficient of the films in a vacuum. The excellent wear resistance of the a-C:N films, in the level of 10 -9 -10 -8 mm 3 /Nm, can be observed in N 2 , vacuum, and dry air environments. In addition, the effect of the bias voltage on the wear rate of the a-C:N films becomes less obvious by nitrogen incorporation. So, we suggest the incorporated nitrogen, which bonded to carbon and restrained the increase of the fraction of sp 2 C-C, would restrain the wear of the a-C:N films in different environments, especially in dry air

  2. Creep of FINEMET alloy at amorphous to nanocrystalline transition

    NARCIS (Netherlands)

    Csach, K.; Miškuf, J.; Juríková, A.; Ocelík, V.

    2009-01-01

    The application of FINEMET-type materials with specific magnetic properties prepared by the crystallization of amorphous alloys is often limited by their brittleness. The structure of these materials consists of nanosized Fe-based grains surrounded with amorphous phase. Then the final macroscopic

  3. Determination of boron in amorphous alloys

    Energy Technology Data Exchange (ETDEWEB)

    Grazhulene, S.S.; Grossman, O.V.; Kuntscher, K.K.; Malygina, L.I.; Muller, E.N.; Telegin, G.F.

    1985-10-01

    In the determination of boron in amorphous alloys containingFe, Co, B, Si, Ni, and P having unusal magnetic and electrical properties, precise analysis and rapid analysis are necessary. To improve the metrological properties of the existing procedure, to find a rapid determination of boron in amorphous alloys, and to verify the accuracy of the results, in the present work the optimization of the photometric determination after extraction of the BF/sup -//sub 4/ ion pair with methylene blue has been studied, and a boron determination by flame photometry using selective methylation has been developed. The determination of boron by the flame photometric and spectrophotometric methods is shown. When a highly precise determination is needed, the spectrophotometric procedure can be used. This procedure is distinguished by its labor intensity and duration. When the need for reproducibility is less severe, the rapid flame photometric procedure is best.

  4. FY 1999 report on the results of the development of technology of super metal. Development of nano/amorphous structure control materials; 1999 nendo super metal no gijutsu kaihatsu seika hokokusho. Nano amorphous kozo seigyo gijutsu no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    For the purpose of reducing the amount of energy consumption of transportation equipment such as automobiles, the development is made of innovative metal materials enabling the weight reduction of members relatively on the basis of simple chemical components and by making more substantial improvement of characteristics such as strength and toughness than in the existing metals. For it, the following R and D are conducted in which nano crystal structure and non-equilibrium phase structure such as amorphous are controlled to the limits: 1) particle micro-dispersion technology; 2) high speed super plastic formation technology; 3) high density energy utilization control technology; 4) control cooling technology. In 1), study was made of alloy components and effects of the creation process which are needed for achievement of the nano level of crystal grain. In 2), conditions of vapor deposition and production in high speed particle deposition method are optimally selected, and amorphous and nano crystal structures can easily be produced. In 3), high corrosion-resistant amorphous alloy bulk materials with 5mm thickness and 10mm diameter were successfully trially manufactured. In 4), a bulk amorphous specimen with 10mm outer diameter, 6mm inner diameter and 1mm thickness which was fabricated in the forging method indicated favorable magnetic properties. A method to make a specimen which is more stable is being studied. (NEDO)

  5. Chemical vapor deposition of refractory ternary nitrides for advanced diffusion barriers

    Energy Technology Data Exchange (ETDEWEB)

    Custer, Jonathan S.; Fleming, James G.; Roherty-Osmun, Elizabeth; Smith, Paul Martin

    1998-09-22

    Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturing of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.

  6. Aluminium base amorphous and crystalline alloys with Fe impurity

    International Nuclear Information System (INIS)

    Sitek, J.; Degmova, J.

    2006-01-01

    Aluminium base alloys show remarkable mechanical properties, however their low thermal stability still limits the technological applications. Further improvement of mechanical properties can be reached by partial crystallization of amorphous alloys, which gives rise to nanostructured composites. Our work was focused on aluminium based alloys with Fe, Nb and V additions. Samples of nominal composition Al 90 Fe 7 Nb 3 and Al 94 Fe 2 V 4 were studied in amorphous state and after annealing up to 873 K. From Moessbauer spectra taken on the samples in amorphous state the value of f-factor was determined as well as corresponding Debye temperatures were calculated. Annealing at higher temperatures induced nano and microcrystalline crystallization. Moessbauer spectra of samples annealed up to 573 K are fitted only by distribution of quadrupole doublets corresponding to the amorphous state. An increase of annealing temperature leads to the structural transformation, which consists in growth of nanometer sized aluminium nuclei. This is partly reflected in Moessbauer parameters. After annealing at 673 K intermetallic phase Al 3 Fe and other Al-Fe phases are created. In this case Moessbauer spectra are fitted by quadrupole doublets. During annealing up to 873 K large grains of Fe-Al phases are created. (authors)

  7. Moessbauer study of amorphous Fe-P alloys

    International Nuclear Information System (INIS)

    Takacs, L.; Toth-Kadar, E.

    1981-01-01

    Preliminary Moessbauer results are represented on electrodeposited Fe-P amorphous alloys. Very broad hyperfine field distributions and relatively large isomer shifts have been found. Problems worth of further investigation are discussed in details. (author)

  8. Chemical vapor deposited fiber coatings and chemical vapor infiltrated ceramic matrix composites

    Energy Technology Data Exchange (ETDEWEB)

    Kmetz, M.A.

    1992-01-01

    Conventional Chemical Vapor Deposition (CVD) and Organometallic Chemical Vapor Deposition (MOCVD) were employed to deposit a series of interfacial coatings on SiC and carbon yarn. Molybdenum, tungsten and chromium hexacarbonyls were utilized as precursors in a low temperature (350[degrees]C) MOCVD process to coat SiC yarn with Mo, W and Cr oxycarbides. Annealing studies performed on the MoOC and WOC coated SiC yarns in N[sub 2] to 1,000[degrees]C establish that further decomposition of the oxycarbides occurred, culminating in the formation of the metals. These metals were then found to react with Si to form Mo and W disilicide coatings. In the Cr system, heating in N[sub 2] above 800[degrees]C resulted in the formation of a mixture of carbides and oxides. Convention CVD was also employed to coat SiC and carbon yarn with C, Bn and a new interface designated BC (a carbon-boron alloy). The coated tows were then infiltrated with SiC, TiO[sub 2], SiO[sub 2] and B[sub 4]C by a chemical vapor infiltration process. The B-C coatings were found to provide advantageous interfacial properties over carbon and BN coatings in several different composite systems. The effectiveness of these different coatings to act as a chemically inert barrier layer and their relationship to the degree of interfacial debonding on the mechanical properties of the composites were examined. The effects of thermal stability and strength of the coated fibers and composites were also determined for several difference atmospheres. In addition, a new method for determining the tensile strength of the as-received and coated yarns was also developed. The coated fibers and composites were further characterized by AES, SEM, XPS, IR and X-ray diffraction analysis.

  9. Effect of the hydrogen flow rate on the structural and optical properties of hydrogenated amorphous silicon thin films prepared by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ben Amor, Sana; Dimassi, Wissem; Ali Tebai, Mohamed; Ezzaouia, Hatem [Photovoltaic Laboratory Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia)

    2012-10-15

    Hydrogenated amorphous silicon (a-Si:H) thin films were deposited from pure silane (SiH{sub 4}) and hydrogen (H{sub 2}) gas mixture by plasma enhanced chemical vapor deposition (PECVD) method at low temperature (400 C) using high rf power (60 W). The structural and optical properties of these films are systematically investigated as a function of the flow rate of hydrogen (F{sub H2}).The surface morphology is analyzed by atomic force microscopy (AFM). The characterization of these films with low angle X-ray diffraction revealed that the crystallite size in the films tends to decrease with increase in (F{sub H2}). The Fourier transform infrared (FTIR) spectroscopic analysis showed that at low values of (F{sub H2}),the hydrogen bonding in Si:H films shifts from di-hydrogen (Si-H{sub 2}) and (Si-H{sub 2})n complexes to the mono-hydrogen (Si-H) bonding configuration. Finally, for these optimized conditions, the deposition rate decreases with increasing (F{sub H2}). (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Amorphous alloys in the U-Cr-V system

    International Nuclear Information System (INIS)

    Ray, R.; Musso, E.

    1979-01-01

    Amorphous uranium-chromium-vanadium alloys and a method of producing them are described. The uranium content of the alloys may vary between 60 and 80 atom percent, and chromium and vanadium between 0 and 40 atom percent, most particularly between 20 and 40 atom percent. A maximum of 10 atom percent of Cr or V may be replaced by other alloying elements, including metalloids and at least one transtion metal element. (LL)

  11. Nanocomposite metal amorphous-carbon thin films deposited by hybrid PVD and PECVD technique.

    Science.gov (United States)

    Teixeira, V; Soares, P; Martins, A J; Carneiro, J; Cerqueira, F

    2009-07-01

    Carbon based films can combine the properties of solid lubricating graphite structure and hard diamond crystal structure, i.e., high hardness, chemical inertness, high thermal conductivity and optical transparency without the crystalline structure of diamond. Issues of fundamental importance associated with nanocarbon coatings are reducing stress, improving adhesion and compatibility with substrates. In this work new nanocomposite coatings with improved toughness based in nanocrystalline phases of metals and ceramics embedded in amorphous carbon matrix are being developed within the frame of a research project: nc-MeNxCy/a-C(Me) with Me = Mo, Si, Al, Ti, etc. Carbide forming metal/carbon (Me/C) composite films with Me = Mo, W or Ti possess appropriate properties to overcome the limitation of pure DLC films. These novel coating architectures will be adopted with the objective to decrease residual stress, improve adherence and fracture toughness, obtain low friction coefficient and high wear-resistance. Nanocomposite DLC's films were deposited by hybrid technique using a PVD-Physically Vapor Deposition (magnetron sputtering) and Plasma Enhanced Chemical Vapor Deposition (PECVD), by the use of CH4 gas. The parameters varied were: deposition time, substrate temperature (180 degrees C) and dopant (Si + Mo) of the amorphous carbon matrix. All the depositions were made on silicon wafers and steel substrates precoated with a silicon inter-layer. The characterisation of the film's physico-mechanical properties will be presented in order to understand the influence of the deposition parameters and metal content used within the a-C matrix in the thin film properties. Film microstructure and film hybridization state was characterized by Raman Spectroscopy. In order to characterize morphology SEM and AFM will be used. Film composition was measured by Energy-Dispersive X-ray analysis (EDS) and by X-ray photoelectron spectroscopy (XPS). The contact angle for the produced DLC's on

  12. Crystalline-to-amorphous phase transformation in mechanically alloyed Fe50W50 powders

    International Nuclear Information System (INIS)

    Sherif El-Eskandarany, M.S.; Sumiyama, K.; Suzuki, K.

    1997-01-01

    A mechanical alloying process via a ball milling technique has been applied for preparing amorphous Fe 50 W 50 alloy powders. The results have shown that during the first and second stages of milling (0 to 360 ks) W atoms emigrate to Fe lattices to form nanocrystalline b.c.c. Fe-W solid solution, with a grain size of about 7 nm in diameter. After 720 ks of the milling time, this solid solution was transformed to an amorphous Fe-W alloy coexisting with the residual fraction of the unprocessed W powders. During the last stage of milling (720 to 1,440 ks) all of this residual W powder reacts with the amorphous phase to form a homogeneous Fe 50 W 50 amorphous alloy. The crystallization temperature and the enthalpy change of crystallization of amorphous Fe 50 W 50 powders milled for 1,440 ks were measured to be 860 K and -9kJ/mol, respectively. The amorphous Fe 50 W 50 powder produced is almost paramagnetic at room temperature. The powder comprises homogeneous and smooth spheres with an average size of about 0.5 microm in diameter

  13. Pressure effects on Al89La6Ni5 amorphous alloy crystallization

    DEFF Research Database (Denmark)

    Zhuang, Yanxin; Jiang, Jianzhong; Zhou, T. J.

    2000-01-01

    The pressure effect on the crystallization of the Al89La6Ni5 amorphous alloy has been investigated by in situ high-pressure and high-temperature x-ray powder diffraction using synchrotron radiation. The amorphous alloy crystallizes in two steps in the pressure range studied (0-4 GPa). The first p...

  14. Thermal plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Heberlein, J.; Pfender, E.

    1993-01-01

    Thermal plasmas, with temperatures up to and even exceeding 10 4 K, are capable of producing high density vapor phase precursors for the deposition of relatively thick films. Although this technology is still in its infancy, it will fill the void between the relatively slow deposition processes such as physical vapor deposition and the high rate thermal spray deposition processes. In this chapter, the present state-of-the-art of this field is reviewed with emphasis on the various types of reactors proposed for this emerging technology. Only applications which attracted particular attention, namely diamond and high T c superconducting film deposition, are discussed in greater detail. (orig.)

  15. Amorphous gallium oxide grown by low-temperature PECVD

    KAUST Repository

    Kobayashi, Eiji; Boccard, Mathieu; Jeangros, Quentin; Rodkey, Nathan; Vresilovic, Daniel; Hessler-Wyser, Aï cha; Dö beli, Max; Franta, Daniel; De Wolf, Stefaan; Morales-Masis, Monica; Ballif, Christophe

    2018-01-01

    demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaO:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200 °C. In this way, conformal films are deposited at high deposition rates, achieving high broadband

  16. Modification of amorphous metal alloys and nanocrystals by radiation

    International Nuclear Information System (INIS)

    Holkova, D.; Sitek, J.

    2017-01-01

    The paper deals with radiation damage and modification of amorphous metal alloys by neutron irradiation and electrons. Initial experiments were focused on electron irradiation, with various amorphous precursors as well as nanocrystalline alloys: Fe_8_1Nb_7B_1_2, (Fe_3Ni_1)_8_1Nb_7B_1_2, (Fe_3Ni_1)_8_1Nb_7B_1_2 and NANOMET Fe_8_1_._6B_9_._6Si_4_._8P_3Cu_1 being selected for the irradiated objects. The experimental part summarizes the previous results obtained by Moessbauer spectroscopy as well as XRD. (authors)

  17. Study of oxidation behaviour of Zr-based bulk amorphous alloy Zr 65 ...

    Indian Academy of Sciences (India)

    The oxidation behaviour of Zr-based bulk amorphous alloy Zr65Cu17.5Ni10Al7.5 has been studied in air environment at various temperatures in the temperature range 591–684 K using a thermogravimetric analyser (TGA). The oxidation kinetics of the alloy in the amorphous phase obeys the parabolic rate law for oxidation ...

  18. Superconductivity, magnetic susceptibility, and electronic properties of amorphous (Mo/sub 1-x/Ru/sub x/)80P20 alloys obtained by liquid quenching

    International Nuclear Information System (INIS)

    Johnson, W.L.; Poon, S.J.; Duwez, P.

    1977-11-01

    Results of x-ray diffraction, transmission electron diffraction, and crystallization studies on amorphous (Mo/sub 1-x/Ru/sub x/) 80 P 20 alloys obtained by liquid quenching are presented and discussed. The alloys are all found to be superconducting with transition temperatures ranging from approximately 3 0 K to approximately 9 0 K. The variation of T/sub c/ with alloy composition is compared to that obtained by Collver and Hammond for vapor quenched transition metal films. Results of magnetic susceptibility measurements are used to estimate the variation of the electronic density of states at the Fermi level, N(0), from the Pauli paramagnetic contribution. The relationship between the variation of T/sub c/ and N(0) is discussed in terms of the microscope theory of superconductivity. Finally, results of measurements of the upper critical field H/sub c2/, and the normal state electronic transport properties are presented and compared with recent theoretical models for amorphous superconductors

  19. Radical species involved in hotwire (catalytic) deposition of hydrogenated amorphous silicon

    International Nuclear Information System (INIS)

    Zheng Wengang; Gallagher, Alan

    2008-01-01

    Threshold ionization mass spectroscopy is used to measure the radicals that cause deposition of hydrogenated amorphous silicon by 'hotwire' (HW), or 'catalytic,' chemical vapor deposition. We provide the probability of silane (SiH 4 ) decomposition on the HW, and of Si and H release from the HW. The depositing radicals, and H atoms, are measured versus conditions to obtain their radical-silane reaction rates and contributions to film growth. A 0.01-3 Pa range of silane pressures and 1400-2400 K range of HW temperatures were studied, encompassing optimum device production conditions. Si 2 H 2 is the primary depositing radical under optimum conditions, accompanied by a few percent of Si atoms and a lot of H-atom reactions. Negligible SiH n radical production is observed and only a small flux of disilane is produced, but at the higher pressures some Si 3 H n is observed. A Si-SiH 4 reaction rate coefficient of 1.65 * 10 -11 cm 3 /s and a H + SiH 4 reaction rate coefficient of 5 * 10 -14 cm 3 /s are measured

  20. Electrochemical properties of N-doped hydrogenated amorphous carbon films fabricated by plasma-enhanced chemical vapor deposition methods

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, Yoriko; Furuta, Masahiro; Kuriyama, Koichi; Kuwabara, Ryosuke; Katsuki, Yukiko [Division of Environmental Science and Engineering, Graduate School of Science and Engineering, Yamaguchi University, 1677-1 Yoshida, Yamaguchi-shi, Yamaguchi 753-8512 (Japan); Kondo, Takeshi [Department of Pure and Applied Chemistry, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Fujishima, Akira [Kanagawa Advanced Science and Technology (KAST), 3-2-1, Sakato, Takatsu-ku, Kawasaki-shi, Kanagawa 213-0012 (Japan); Honda, Kensuke, E-mail: khonda@yamaguchi-u.ac.j [Division of Environmental Science and Engineering, Graduate School of Science and Engineering, Yamaguchi University, 1677-1 Yoshida, Yamaguchi-shi, Yamaguchi 753-8512 (Japan)

    2011-01-01

    Nitrogen-doped hydrogenated amorphous carbon thin films (a-C:N:H, N-doped DLC) were synthesized with microwave-assisted plasma-enhanced chemical vapor deposition widely used for DLC coating such as the inner surface of PET bottles. The electrochemical properties of N-doped DLC surfaces that can be useful in the application as an electrochemical sensor were investigated. N-doped DLC was easily fabricated using the vapor of nitrogen contained hydrocarbon as carbon and nitrogen source. A N/C ratio of resulting N-doped DLC films was 0.08 and atomic ratio of sp{sup 3}/sp{sup 2}-bonded carbons was 25/75. The electrical resistivity and optical gap were 0.695 {Omega} cm and 0.38 eV, respectively. N-doped DLC thin film was found to be an ideal polarizable electrode material with physical stability and chemical inertness. The film has a wide working potential range over 3 V, low double-layer capacitance, and high resistance to electrochemically induced corrosion in strong acid media, which were the same level as those for boron-doped diamond (BDD). The charge transfer rates for the inorganic redox species, Fe{sup 2+/3+} and Fe(CN){sub 6}{sup 4-/3-} at N-doped DLC were sufficiently high. The redox reaction of Ce{sup 2+/3+} with standard potential higher than H{sub 2}O/O{sub 2} were observed due to the wider potential window. At N-doped DLC, the change of the kinetics of Fe(CN){sub 6}{sup 3-/4-} by surface oxidation is different from that at BDD. The rate of Fe(CN){sub 6}{sup 3-/4-} was not varied before and after oxidative treatment on N-doped DLC includes sp{sup 2} carbons, which indicates high durability of the electrochemical activity against surface oxidation.

  1. Magnetic and electrical properties of several Mn-based amorphous alloys

    Science.gov (United States)

    Obi, Y.; Morita, H.; Fujimori, H.

    1987-03-01

    Magnetic and electrical properties of amorphous Mn-Y, Mn-Zr, and Mn-Nb alloys have been investigated. All these alloys have a temperature-dependent susceptibility which is well fitted by a Curie-Weiss law. This implies the existence of localized magnetic moments associated with the Mn atoms. In addition, amorphous Mn-Y alloys exhibit spin-glass characteristics at low temperature. The experimental results of the electrical resistivity show that the temperature coefficient of resistivity (TCR) of both Mn-Y and Mn-Zr are negative, while Mn-Nb has a positive TCR. On the other hand, the resistivity-temperature curves of Mn-Zr and Mn-Nb have nearly the same tendency but are different from that of Mn-Y.

  2. Coating of carbon short fibers with thin ceramic layers by chemical vapor deposition

    International Nuclear Information System (INIS)

    Hackl, Gerrit; Gerhard, Helmut; Popovska, Nadejda

    2006-01-01

    Carbon short fiber bundles with a length of 6 mm were uniformly coated using specially designed, continuous chemical vapor deposition (CVD) equipment. Thin layers of titanium nitride, silicon nitride (SiC) and pyrolytic carbon (pyC) were deposited onto several kilograms of short fibers in this large scale CVD reactor. Thermo-gravimetric analyses and scanning electron microscopy investigations revealed layer thicknesses between 20 and 100 nm on the fibers. Raman spectra of pyC coated fibers show a change of structural order depending on the CVD process parameters. For the fibers coated with SiC, Raman investigations showed a deposition of amorphous SiC. The coated carbon short fibers will be applied as reinforcing material in composites with ceramic and metallic matrices

  3. Low-temperature interface reactions in layered Au/Sb films: In situ investigation of the formation of an amorphous phase

    Science.gov (United States)

    Boyen, H.-G.; Cossy-Favre, A.; Oelhafen, P.; Siber, A.; Ziemann, P.; Lauinger, C.; Moser, T.; Häussler, P.; Baumann, F.

    1995-01-01

    Photoelectron-spectroscopy methods combined with electrical-resistance measurements were employed to study the effects of intermixing at Au/Sb interfaces at low temperatures. For the purpose of characterizing the growth processes of the intermixed phase on a ML scale, Au/Sb bilayers (layer thicknesses DAu=0.5-75 ML and DSb=150 ML) were evaporated at 77 K and the different in situ techniques allowed a comparison to vapor-quenched amorphous AuxSb100-x alloys. For Au thicknesses between 0.5 and 0.9 ML, a change from a semiconducting to a metallic behavior of the samples has been detected, as indicated by the development of a steplike photoelectron intensity at the Fermi level. Evidence has been found that for Au coverages quenched amorphous alloys. Variation of the deposition temperature Ts revealed that an amorphous interface layer is only formed for Ts<= 220 K. This is consistent with the fact that for multilayers with large modulation lengths containing unreacted polycrystalline Au and Sb layers, long-range interdiffusion is found to set in at temperatures above 230 K. This interdiffusion, however, results in the formation of polycrystalline Au-Sb alloys.

  4. Minor-Cu doped soft magnetic Fe-based FeCoBCSiCu amorphous alloys with high saturation magnetization

    Science.gov (United States)

    Li, Yanhui; Wang, Zhenmin; Zhang, Wei

    2018-05-01

    The effects of Cu alloying on the amorphous-forming ability (AFA) and magnetic properties of the P-free Fe81Co5B11C2Si1 amorphous alloy were investigated. Addition of ≤ 1.0 at.% Cu enhances the AFA of the base alloy without significant deterioration of the soft magnetic properties. The Fe80.5Co5B11C2Si1Cu0.5 alloy with the largest critical thickness for amorphous formation of ˜35 μm possesses a high saturation magnetization (Bs) of ˜1.78 T, low coercivity of ˜14.6 A/m, and good bending ductility upon annealing in a wide temperature range of 513-553 K with maintaining the amorphous state. The fabrication of the new high-Fe-content Fe-Co-B-C-Si-Cu amorphous alloys by minor doping of Cu gives a guideline to developing high Bs amorphous alloys with excellent AFA.

  5. Moessbauer and transport studies of amorphous and icosahedral Zr-Ni-Cu-Ag-Al alloys

    International Nuclear Information System (INIS)

    Stadnik, Z.M.; Rapp, O.; Srinivas, V.; Saida, J.; Inoue, A.

    2002-01-01

    The alloy Zr 65 Al 7.5 Ni 10 Cu 7.3 Fe 0.2 Ag 10 in the amorphous and icosahedral states, and the bulk amorphous alloy Zr 65 Al 7.5 Ni 10 Cu 7.5 Ag 10 , have been studied with 57 Fe Moessbauer spectroscopy, electrical resistance and magnetoresistance techniques. The average quadrupole splitting in both alloys decreases with temperature as T 3/2 . The average quadrupole splitting in the icosahedral alloy is the largest ever reported for a metallic system. The lattice vibrations of the Fe atoms in the amorphous and icosahedral alloys are well described by a simple Debye model, with the characteristic Moessbauer temperatures of 379(29) and 439(28) K, respectively. Amorphous alloys Zr 65 Al 7. )5Ni 10 Cu 7.5 Ag 10 and Zr 65 Al 7.5 Ni 10 Cu 7.3 Fe 0.2 Ag 10 have been found to be superconducting with the transition temperature, T c , of about 1.7 K. The magnitude of Tc and the critical field slope at Tc are in agreement with previous work on Zr-based amorphous superconductors, while the low-temperature normal state resistivity is larger than typical results for binary and ternary Zr-based alloys. The resistivity of icosahedral Zr 65 Al 7.5 Ni 10 Cu 7.3 Fe 0.2 Ag 10 is larger than that for the amorphous ribbon of the same composition, as inferred both from direct measurements on the ribbons and from the observed magnetoresistance. However the icosahedral sample is non-superconducting in the measurement range down to 1.5 K. The results for the resistivity and the superconducting T c both suggest a stronger electronic disorder in the icosahedral phase than in the amorphous phase. (author)

  6. Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD

    CERN Document Server

    Pereyra, I; Carreno, M N P; Prado, R J; Fantini, M C A

    2000-01-01

    We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-Si C chemical order. Motivated by this trend, we further explore the effect of increasing RF power and H sub 2 dilution of the gaseous mixtures, aiming to obtain the amorphous counterpart of c-Si C by the RF-PECVD technique. Doping experiments were also performed on ordered material using phosphorus and nitrogen as donor impurities and boron and aluminum as acceptor ones. For nitrogen a doping efficiency close to device quality a-Si:H was obtained, the lower activation energy being 0,12 eV with room temperature dark conductivity of 2.10 sup - sup 3 (OMEGA.cm). Nitrogen doping efficiency was higher than phosphorous for all studied samples. For p-type doping, results indicate that, even though the attained conductivity values are not device levels, aluminum doping conducted to a promising shift in the Fermi level. Also, aluminum resulted a more efficie...

  7. Effect of nickel oxide seed layers on annealed-amorphous titanium oxide thin films prepared using plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Wu, Cheng-Yang; Hong, Shao-Chyang; Hwang, Fu-Tsai; Lai, Li-Wen; Lin, Tan-Wei; Liu, Day-Shan

    2011-01-01

    The effect of a nickel oxide (NiO x ) seed layer on the crystallization and photocatalytic activity of the sequentially plasma-enhanced chemical vapor deposited amorphous titanium oxide (TiO x ) thin film processed by a post-annealing process was investigated. The evolution of the crystalline structures, chemical bond configurations, and surface/cross-sectional morphologies of the annealed TiO x films, with and without a NiO x seed layer, was examined using X-ray diffractometer, Fourier transform infrared spectrometry, X-ray photoelectron spectroscopy, atomic force microscopy, and field emission scanning electron microscope measurements. Thermo- and photo-induced hydrophilicity was determined by measuring the contact angle of water droplet. Photocatalytic activity after UV light irradiation was evaluated from the decolorization of a methylene blue solution. The crystallization temperature of the TiO x film, deposited on a NiO x seed layer, was found to be lower than that of a pure TiO x film, further improving the thermo- and photo-induced surface super-hydrophilicity. The TiO x film deposited onto the NiO x seed layer, resulting in significant cluster boundaries, showed a rough surface morphology and proved to alleviate the anatase crystal growth by increasing the post-annealing temperature, which yielded a more active surface area and prohibited the recombination of photogenerated electrons and holes. The photocatalytic activity of the NiO x /TiO x system with such a textured surface therefore was enhanced and optimized through an adequate post-annealing process.

  8. Effect of nickel oxide seed layers on annealed-amorphous titanium oxide thin films prepared using plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Cheng-Yang; Hong, Shao-Chyang [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China); Hwang, Fu-Tsai [Department of Electro-Optical Engineering, National United University, Miao-Li, 36003, Taiwan (China); Lai, Li-Wen [ITRI South, Industrial Technology Research Institute, Liujia, Tainan, 73445, Taiwan (China); Lin, Tan-Wei [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China); Liu, Day-Shan, E-mail: dsliu@sunws.nfu.edu.tw [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China)

    2011-10-31

    The effect of a nickel oxide (NiO{sub x}) seed layer on the crystallization and photocatalytic activity of the sequentially plasma-enhanced chemical vapor deposited amorphous titanium oxide (TiO{sub x}) thin film processed by a post-annealing process was investigated. The evolution of the crystalline structures, chemical bond configurations, and surface/cross-sectional morphologies of the annealed TiO{sub x} films, with and without a NiO{sub x} seed layer, was examined using X-ray diffractometer, Fourier transform infrared spectrometry, X-ray photoelectron spectroscopy, atomic force microscopy, and field emission scanning electron microscope measurements. Thermo- and photo-induced hydrophilicity was determined by measuring the contact angle of water droplet. Photocatalytic activity after UV light irradiation was evaluated from the decolorization of a methylene blue solution. The crystallization temperature of the TiO{sub x} film, deposited on a NiO{sub x} seed layer, was found to be lower than that of a pure TiO{sub x} film, further improving the thermo- and photo-induced surface super-hydrophilicity. The TiO{sub x} film deposited onto the NiO{sub x} seed layer, resulting in significant cluster boundaries, showed a rough surface morphology and proved to alleviate the anatase crystal growth by increasing the post-annealing temperature, which yielded a more active surface area and prohibited the recombination of photogenerated electrons and holes. The photocatalytic activity of the NiO{sub x}/TiO{sub x} system with such a textured surface therefore was enhanced and optimized through an adequate post-annealing process.

  9. Hydrogenated amorphous carbon next deposit after heat treatment

    International Nuclear Information System (INIS)

    Salancon, E.; Durbeck, T.; Schwarz-Selinger, T.; Jacob, W.

    2006-01-01

    One of the main safety problems in the ITER tokamak project is the tritium adsorption in the reactor walls and in particular the deposits which appear after the plasma discharge. These deposits are amorphous hydrogenated carbon films, type polymer (soft a-C:H). The heating of these deposits with a pulse laser is a proposed solution for the tritium desorption. Meanwhile, Gibson and al show that in experimental conditions, products are deposed on the walls before entering the mass spectrometer. The authors present thermo-desorption spectra of different amorphous carbon films. (A.L.B.)

  10. The transient creep of vapor deposited Ti-6Al-4V

    International Nuclear Information System (INIS)

    Warren, J.; Wadley, H.N.G.

    1996-01-01

    Titanium matrix composites can be synthesized by the consolidation of ceramic fibers (for example, alumina and silicon carbide monofilaments) coated with titanium alloy deposited on the fiber by physical vapor deposition (PVD). Consolidation involves deformation of the matrix coating by both transient and steady-state creep. In a recent paper the mechanisms responsible for steady-state creep in PVD Ti-6Al-4V, between 600 and 900 C, were determined. The analysis of the data first presented has been extended here to consider the transient creep behavior of the material and identify an analogous constitutive law for use in simulating the transient creep contribution to consolidation

  11. Impurities in chromium deposits produced by electroplating and physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dini, J.W.

    1994-05-01

    Impurity contents in electrodeposited (hexavalent and trivalent) chromium deposits and physically vapor deposited (thermal evaporation, electron beam evaporation and rf-sputtering) were compared. Oxygen is the key impurity obtained in electrodeposited films but it can be minimized in hexavalent plating solutions by operating at high temperature, e. g., 85 C. Electrodeposits produced in trivalent chromium plating solutions and physically vapor deposited films have much higher oxygen contents than electrodeposits produced in hexavalent chromium solutions operated at temperatures around 85 C. Depending on the target material used for physically vapor deposited films, these films can also have high amounts of other impurities.

  12. Chemical vapor deposition of Si/SiC nano-multilayer thin films

    International Nuclear Information System (INIS)

    Weber, A.; Remfort, R.; Woehrl, N.; Assenmacher, W.; Schulz, S.

    2015-01-01

    Stoichiometric SiC films were deposited with the commercially available single source precursor Et_3SiH by classical thermal chemical vapor deposition (CVD) as well as plasma-enhanced CVD at low temperatures in the absence of any other reactive gases. Temperature-variable deposition studies revealed that polycrystalline films containing different SiC polytypes with a Si to carbon ratio of close to 1:1 are formed at 1000 °C in thermal CVD process and below 100 °C in the plasma-enhanced CVD process. The plasma enhanced CVD process enables the reduction of residual stress in the deposited films and offers the deposition on temperature sensitive substrates in the future. In both deposition processes the film thickness can be controlled by variation of the process parameters such as the substrate temperature and the deposition time. The resulting material films were characterized with respect to their chemical composition and their crystallinity using scanning electron microscope, energy dispersive X-ray spectroscopy (XRD), atomic force microscopy, X-ray diffraction, grazing incidence X-ray diffraction, secondary ion mass spectrometry and Raman spectroscopy. Finally, Si/SiC multilayers of up to 10 individual layers of equal thickness (about 450 nm) were deposited at 1000 °C using Et_3SiH and SiH_4. The resulting multilayers features amorphous SiC films alternating with Si films, which feature larger crystals up to 300 nm size as measured by transmission electron microscopy as well as by XRD. XRD features three distinct peaks for Si(111), Si(220) and Si(311). - Highlights: • Stoichiometric silicon carbide films were deposited from a single source precursor. • Thermal as well as plasma-enhanced chemical vapor deposition was used. • Films morphology, crystallinity and chemical composition were characterized. • Silicon/silicon carbide multilayers of up to 10 individual nano-layers were deposited.

  13. Amorphous Metallic Alloys: Pathways for Enhanced Wear and Corrosion Resistance

    Science.gov (United States)

    Aditya, Ayyagari; Felix Wu, H.; Arora, Harpreet; Mukherjee, Sundeep

    2017-11-01

    Amorphous metallic alloys are widely used in bulk form and as coatings for their desirable corrosion and wear behavior. Nevertheless, the effects of heat treatment and thermal cycling on these surface properties are not well understood. In this study, the corrosion and wear behavior of two Zr-based bulk metallic glasses were evaluated in as-cast and thermally relaxed states. Significant improvement in wear rate, friction coefficient, and corrosion penetration rate was seen for both alloys after thermal relaxation. A fully amorphous structure was retained with thermal relaxation below the glass transition. There was an increase in surface hardness and elastic modulus for both alloys after relaxation. The improvement in surface properties was explained based on annihilation of free volume.

  14. Plasma deposition of amorphous silicon-based materials

    CERN Document Server

    Bruno, Giovanni; Madan, Arun

    1995-01-01

    Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Key Features * Focuses on the plasma chemistry of amorphous silicon-based materials * Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced * Features an international group of contributors * Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices.

  15. Fe based amorphous and compounds metallic alloys for magnetic and structural use

    International Nuclear Information System (INIS)

    Lavorato, G; Bassi, F; De Rosa, H; Moya, J

    2008-01-01

    Massive amorphous metals (thicker than 1mm) are new types of material that could have a wide range of future applications due to a unique combination of their physical properties, mechanics and magnetics. Among these are the elevated tension of fracture and hardness, and excellent soft magnetic properties. Since 1960, when an amorphous metallic alloy was first discovered, progress has continued on the application possibilities for these materials. One of their main limitations, maximum obtainable thickness, has continued to increase, since at first thicknesses of a few microns were obtained. Now amorphous alloys more than 70 mm thick are obtained using different metallic elements. Since 1995 massive amorphous metals can be produced using Fe as the base element. At first they were made in order to achieve good soft magnetic properties (thicknesses of ∼5 mm) and later a renewed interest in their use as structural material led to the development of materials with thicknesses of 16 mm and paramagnetics at room temperature. Increasing the toughness of these materials is also a challenge and investigators have proposed several solutions, among them is the development of composite materials where dendrites from a solid solution act as crack stoppers of fissures that are spread by an amorphous matrix. This work presents the results of studies with two types of synthesized materials using the rapid cooling technique from injection copper mold casting at air temperature: 1) a massive amorphous metallic alloy with composition (Fe 0.375 Co 0 .375 B 0.2 Si 0.05 )96Nb 4 (at.%) and 2) a composite of solid solution dendrites α-(FeCo) scattered in an amorphous matrix with a composition similar to alloy 1. Using the samples obtained structural studies were made (optic and electronic microscopy SEM, XRD, EDAX, DTA), magnetic studies (coercive field and saturation magnetization) and mechanical studies (Vickers microhardness). The fully amorphous alloy could be obtained with a

  16. Kinetics and formation mechanism of amorphous Fe52Nb48 alloy powder fabricated by mechanical alloying

    International Nuclear Information System (INIS)

    El-Eskandarany, S.

    1999-01-01

    A single phase amorphous Fe 52 Nb 48 alloy has been synthesized through a solid state interdiffusion of pure polycrystalline Fe and Nb powders at room temperature, using a high-energy ball-milling technique. The mechanisms of metallic glass formation and competing crystallization processes in the mechanically deformed composite powders have been investigated by means of X-ray diffraction, Moessbauer spectroscopy, differential thermal analysis, scanning electron microscopy and transmission electron microscopy. The numerous intimate layered composite particles of the diffusion couples that formed during the first and intermediate stages of milling time (0-56 ks), are intermixed to form amorphous phase(s) upon heating to about 625 K by so-called thermally assisted solid state amorphization, TASSA. The amorphization heat of formation for binary system via the TASSA, ΔH a , was measured directly as a function of the milling time. Comparable with the TASSA, homogeneous amorphous alloys were fabricated directly without heating the composite multilayered particles upon milling these particles for longer milling time (86 ks-144 ks). The amorphization reaction here is attributed to the mechanical driven solid state amorphization. This single amorphous phase transforms into an order phase (μ phase) upon heating at 1088 K (crystallization temperature, T x ) with enthalpy change of crystallization, ΔH x , of -8.3 kJmol -1 . (orig.)

  17. Epitaxial growth of Si1−xGex alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating

    International Nuclear Information System (INIS)

    Ueno, Naofumi; Sakuraba, Masao; Murota, Junichi; Sato, Shigeo

    2014-01-01

    By using electron-cyclotron-resonance (ECR) Ar-plasma chemical vapor deposition (CVD) without substrate heating, the epitaxial growth process of Si 1−x Ge x alloy and Ge films deposited directly on dilute-HF-treated Si(100) was investigated. From the reflection high energy electron diffraction patterns of the deposited Si 1−x Ge x alloy (x = 0.50, 0.75) and Ge films on Si(100), it is confirmed that epitaxial growth can be realized without substrate heating, and that crystallinity degradation at larger film thickness is observed. The X-ray diffraction peak of the epitaxial films reveals the existence of large compressive strain, which is induced by lattice matching with the Si(100) substrate at smaller film thicknesses, as well as strain relaxation behavior at larger film thicknesses. The Ge fraction of Si 1−x Ge x thin film is in good agreement with the normalized GeH 4 partial pressure. The Si 1−x Ge x deposition rate increases with an increase of GeH 4 partial pressure. The GeH 4 partial pressure dependence of partial deposition rates [(Si or Ge fraction) × (Si 1−x Ge x thickness) / (deposition time)] shows that the Si partial deposition rate is slightly enhanced by the existence of Ge. From these results, it is proposed that the ECR-plasma CVD process can be utilized for Ge fraction control in highly-strained heterostructure formation of group IV semiconductors. - Highlights: • Si 1−x Ge x alloy and Ge were epitaxially grown on Si(100) without substrate heating. • Large strain and its relaxation behavior can be observed by X-ray diffraction. • Ge fraction of Si 1−x Ge x is equal to normalized GeH 4 partial pressure. • Si partial deposition rate is slightly enhanced by existence of Ge

  18. Correlation Between Superheated Liquid Fragility And Onset Temperature Of Crystallization For Al-Based Amorphous Alloys

    Directory of Open Access Journals (Sweden)

    Guo J.

    2015-06-01

    Full Text Available Amorphous alloys or metallic glasses have attracted significant interest in the materials science and engineering communities due to their unique physical, mechanical, and chemical properties. The viscous flow of amorphous alloys exhibiting high strain rate sensitivity and homogeneous deformation is considered to be an important characteristic in thermoplastic forming processes performed within the supercooled liquid region because it allows superplastic-like deformation behavior. Here, the correlation between the superheated liquid fragility, and the onset temperature of crystallization for Al-based alloys, is investigated. The activation energy for viscous flow of the liquid is also investigated. There is a negative correlation between the parameter of superheated liquid fragility and the onset temperature of crystallization in the same Al-based alloy system. The activation energy decreases as the onset temperature of crystallization increases. This indicates that the stability of a superheated liquid can affect the thermal stability of the amorphous alloy. It also means that a liquid with a large superheated liquid fragility, when rapidly solidified, forms an amorphous alloy with a low thermal stability.

  19. Preparation and Properties of Mg-Cu-Y-Al bulk Amorphous Alloys

    DEFF Research Database (Denmark)

    Pryds, Nini; Eldrup, Morten Mostgaard; Ohnuma, M.

    2000-01-01

    Bulk amorphous (Mg(1-gamma)Al(gamma))(60)CU(30)Y(10) alloys were prepared using a relatively simple technique of rapid cooling of the melt in a copper wedge mould. The temperature vs, time was recorded during the cooling and solidification process of the melt and compared with a spacial and tempo......Bulk amorphous (Mg(1-gamma)Al(gamma))(60)CU(30)Y(10) alloys were prepared using a relatively simple technique of rapid cooling of the melt in a copper wedge mould. The temperature vs, time was recorded during the cooling and solidification process of the melt and compared with a spacial...... temperatures in specimens containing a few percent Al. The alloy with no Al crystallises apparently without the formation of nanoparticles. The critical cooling rate for the formation of an amorphous Mg(60)CU(30)Y(10) specimen was determined experimentally by a combination of DSC data and temperature vs, time...

  20. Thin films of hydrogenated amorphous carbon (a-C:H) obtained through chemical vapor deposition assisted by plasma

    International Nuclear Information System (INIS)

    Mejia H, J.A.; Camps C, E.E.; Escobar A, L.; Romero H, S.; Chirino O, S.; Muhl S, S.

    2004-01-01

    Films of hydrogenated amorphous carbon (a-C:H) were deposited using one source of microwave plasma with magnetic field (type ECR), using mixtures of H 2 /CH 4 in relationship of 80/20 and 95/05 as precursory gases, with work pressures of 4X10 -4 to 6x10 -4 Torr and an incident power of the discharge of microwaves with a constant value of 400 W. It was analyzed the influence among the properties of the films, as the deposit rate, the composition and the bonding types, and the deposit conditions, such as the flow rates of the precursory gases and the polarization voltage of the sample holders. (Author)

  1. Spectroscopic and mechanical studies on the Fe-based amorphous alloy 2605SA1

    International Nuclear Information System (INIS)

    Cabral P, A.; Garcia S, I.; Contreras V, J. A.; Garcia S, F.; Nava, N.

    2010-01-01

    The Vickers micro-hardness of this alloy was unusually dependent on the heat treatment from 300 to 634 K, inferring important micro-structural changes and the presence of amorphous grains before its phase transition. Once the alloy is crystallized, the micro-hardness is characteristic of a brittle alloy, the main problem of these alloys. Within the amorphous state, other properties like free-volume, magnetic states and Fe-Fe distances were followed by Positron annihilation lifetime spectroscopy and Moessbauer spectroscopy, respectively, to analyze those micro-structural changes, thermally induced, which are of paramount interest to understand their brittleness problem. (Author)

  2. Spectroscopic and mechanical studies on the Fe-based amorphous alloy 2605SA1

    Energy Technology Data Exchange (ETDEWEB)

    Cabral P, A.; Garcia S, I. [ININ, Departamento de Quimica, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico); Contreras V, J. A.; Garcia S, F. [Universidad Autonoma del Estado de Mexico, Facultad de Ciencias, El Cerrillo Piedras Blancas, Toluca, Estado de Mexico (Mexico); Nava, N., E-mail: agustin.cabral@inin.gob.m [Instituto Mexicano del Petroleo, Eje Central Lazaro Cardenas No. 152, Col. San Bartolo Atepehuacan, 07730 Mexico D. F. (Mexico)

    2010-07-01

    The Vickers micro-hardness of this alloy was unusually dependent on the heat treatment from 300 to 634 K, inferring important micro-structural changes and the presence of amorphous grains before its phase transition. Once the alloy is crystallized, the micro-hardness is characteristic of a brittle alloy, the main problem of these alloys. Within the amorphous state, other properties like free-volume, magnetic states and Fe-Fe distances were followed by Positron annihilation lifetime spectroscopy and Moessbauer spectroscopy, respectively, to analyze those micro-structural changes, thermally induced, which are of paramount interest to understand their brittleness problem. (Author)

  3. Amorphous Alloy Membranes Prepared by Melt-Spin methods for Long-Term use in Hydrogen Separation Applications

    Energy Technology Data Exchange (ETDEWEB)

    Chandra, Dhanesh; Kim, Sang-Mun; Adibhatla, Anasuya; Dolan, Michael; Paglieri, Steve; Flanagan, Ted; Chien, Wen-Ming; Talekar, Anjali; Wermer, Joseph

    2013-02-28

    Amorphous Ni-based alloy membranes show great promise as inexpensive, hydrogenselective membrane materials. In this study, we developed membranes based on nonprecious Ni-Nb-Zr alloys by adjusting the alloying content and using additives. Several studies on crystallization of the amorphous ribbons, in-situ x-ray diffraction, SEM and TEM, hydrogen permeation, hydrogen solubility, hydrogen deuterium exchange, and electrochemical studies were conducted. An important part of the study was to completely eliminate Palladium coatings of the NiNbZr alloys by hydrogen heattreatment. The amorphous alloy (Ni0.6Nb0.4)80Zr20 membrane appears to be the best with high hydrogen permeability and good thermal stability.

  4. Hydriding properties of amorphous Ni-B alloy studied by DSC and thermogravimetry

    International Nuclear Information System (INIS)

    Spassov, T.; Rangelova, V.

    1999-01-01

    The hydrogenation behaviour of melt-spun Ni 81.5 B 18.5 amorphous alloy was studied by means of differential scanning calorimetry (DSC) and thermogravimetry (TG) and compared with the hydriding properties of a Fe-B-Si glass. It was found that the amorphous Ni-B alloy absorbs larger amounts of hydrogen than the Fe-B-Si glass, as the initial kinetics of hydrogen absorption and desorption of both the alloys are comparable. Hydrogen absorption and desorption reactions in Ni-B were observed to proceed with similar rates at ca. 300 K. The hydrogen desorption is revealed in DSC as an endothermic peak in the 350-450 K range, preceding the crystallization peak of the amorphous alloy. The enthalpy of hydrogen desorption (ΔH des =22 kJ/mol H 2 ) for Ni-B was found to be smaller than that for the Fe-B-Si glass, which finding is in contrast to the results on hydrogen diffusion in crystalline αFe and Fe-based alloys and Ni and Ni-based alloys. The hydrogen desorption temperature and enthalpy for Ni 81.5 B 18.5 were found to be independent of the amount of hydrogen absorbed. (Copyright (c) 1999 Elsevier Science B.V., Amsterdam. All rights reserved.)

  5. Microstructure of vapor deposited coatings on curved substrates

    Energy Technology Data Exchange (ETDEWEB)

    Rodgers, Theron M.; Zhao, Hengbei; Wadley, Haydn N. G., E-mail: haydn@virginia.edu [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., P.O. Box 400745, Charlottesville, Virginia 22904 (United States)

    2015-09-15

    Thermal barrier coating systems consisting of a metallic bond coat and ceramic over layer are widely used to extend the life of gas turbine engine components. They are applied using either high-vacuum physical vapor deposition techniques in which vapor atoms rarely experience scattering collisions during propagation to a substrate, or by gas jet assisted (low-vacuum) vapor deposition techniques that utilize scattering from streamlines to enable non-line-of-sight deposition. Both approaches require substrate motion to coat a substrate of complex shape. Here, direct simulation Monte Carlo and kinetic Monte Carlo simulation methods are combined to simulate the deposition of a nickel coating over the concave and convex surfaces of a model airfoil, and the simulation results are compared with those from experimental depositions. The simulation method successfully predicted variations in coating thickness, columnar growth angle, and porosity during both stationary and substrate rotated deposition. It was then used to investigate a wide range of vapor deposition conditions spanning high-vacuum physical vapor deposition to low-vacuum gas jet assisted vapor deposition. The average coating thickness was found to increase initially with gas pressure reaching a maximum at a chamber pressure of 8–10 Pa, but the best coating thickness uniformity was achieved under high vacuum deposition conditions. However, high vacuum conditions increased the variation in the coatings pore volume fraction over the surface of the airfoil. The simulation approach was combined with an optimization algorithm and used to investigate novel deposition concepts to tailor the local coating thickness.

  6. Microstructure of vapor deposited coatings on curved substrates

    International Nuclear Information System (INIS)

    Rodgers, Theron M.; Zhao, Hengbei; Wadley, Haydn N. G.

    2015-01-01

    Thermal barrier coating systems consisting of a metallic bond coat and ceramic over layer are widely used to extend the life of gas turbine engine components. They are applied using either high-vacuum physical vapor deposition techniques in which vapor atoms rarely experience scattering collisions during propagation to a substrate, or by gas jet assisted (low-vacuum) vapor deposition techniques that utilize scattering from streamlines to enable non-line-of-sight deposition. Both approaches require substrate motion to coat a substrate of complex shape. Here, direct simulation Monte Carlo and kinetic Monte Carlo simulation methods are combined to simulate the deposition of a nickel coating over the concave and convex surfaces of a model airfoil, and the simulation results are compared with those from experimental depositions. The simulation method successfully predicted variations in coating thickness, columnar growth angle, and porosity during both stationary and substrate rotated deposition. It was then used to investigate a wide range of vapor deposition conditions spanning high-vacuum physical vapor deposition to low-vacuum gas jet assisted vapor deposition. The average coating thickness was found to increase initially with gas pressure reaching a maximum at a chamber pressure of 8–10 Pa, but the best coating thickness uniformity was achieved under high vacuum deposition conditions. However, high vacuum conditions increased the variation in the coatings pore volume fraction over the surface of the airfoil. The simulation approach was combined with an optimization algorithm and used to investigate novel deposition concepts to tailor the local coating thickness

  7. Crystallization of the amorphous Fe80Zr12B8 alloy under controlled heating

    International Nuclear Information System (INIS)

    Huang, H.; Shao, G.; Tsakiropoulos, P.

    2008-01-01

    The devitrification process of amorphous Fe 80 Zr 12 B 8 alloy ribbons were studied under controlled thermal conditions. The major crystallization event during continuous heating with differential scanning calorimetory (DSC) is dictated by diffusion controlled growth and the associated atom mobility of the slow diffusing species Zr. The existence of prior nano-crystals formed by pre-annealing below the crystallization temperature had little effect on the major crystallization temperature. The crystallization sequence during heating was: amorphousamorphous + α-Fe + Fe 3 Zr(B) → amorphous + α-Fe + Fe 3 Zr(B) + Fe 2 Zr. Different from previous findings in alloys of lower Zr and B contents, the peak for the crystallization of the α-Fe phase alone is missing in the DSC traces of this alloy

  8. Superconductivity, spin-glass properties, and ferromagnetism in amorphous La--Gd--Au alloys

    International Nuclear Information System (INIS)

    Poon, S.J.

    1978-01-01

    The superconducting and magnetic properties of splat cooled amorphous alloys of composition (La/sub 100-x/Gd/sub x/) 80 Au 20 (0 equal to or less than x equal to or less than 100) have been studied. The La 80 Au 20 alloys are ideal type II superconductors (critical temperature T/sub c/ = 3.5 0 K). The concentration range (x 80 Au 20 . The results are compared with recent theories on amorphous magnetism

  9. Characterization of Amorphous Silicon Advanced Materials and PV Devices: Final Technical Report, 15 December 2001--31 January 2005

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, P. C.

    2005-11-01

    The major objectives of this subcontract have been: (1) understand the microscopic properties of the defects that contribute to the Staebler-Wronski effect to eliminate this effect, (2) perform correlated studies on films and devices made by novel techniques, especially those with promise to improve stability or deposition rates, (3) understand the structural, electronic, and optical properties of films of hydrogenated amorphous silicon (a-Si:H) made on the boundary between the amorphous and microcrystalline phases, (4) search for more stable intrinsic layers of a-Si:H, (5) characterize the important defects, impurities, and metastabilities in the bulk and at surfaces and interfaces in a-Si:H films and devices and in important alloy systems, and (6) make state-of-the-art plasma-enhanced chemical vapor deposition (PECVD) devices out of new, advanced materials, when appropriate. All of these goals are highly relevant to improving photovoltaic devices based on a-Si:H and related alloys. With regard to the first objective, we have identified a paired hydrogen site that may be the defect that stabilizes the silicon dangling bonds formed in the Staebler-Wronski effect.

  10. Partial amorphization of an α-FeCr alloy by ball-milling

    International Nuclear Information System (INIS)

    Loureiro, J. M.; Costa, B. F. O.; Caer, G. Le; Delcroix, P.

    2008-01-01

    The structural changes of near-equiatomic α-FeCr alloys, ground in a vibratory mill in vacuum and in argon, were followed as a function of milling time. An amorphous phase forms in both cases but at a much faster rate when milling in argon than when milling in vacuum. Amorphisation by ball-milling of α-FeCr alloys is deduced to be an intrinsic phenomenon which is however speeded-up by oxygen. The amorphous phase crystallizes into a bcc Cr-rich phase and a bcc Fe-rich phase when annealed for short times.

  11. Physical Vapor Deposition of Thin Films

    Science.gov (United States)

    Mahan, John E.

    2000-01-01

    A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

  12. Resistivity changes of some amorphous alloys undergoing nanocrystallization

    Science.gov (United States)

    Barandiarán, J. M.; Fernández Barquín, L.; Sal, J. C. Gómez; Gorría, P.; Hernando, A.

    1993-10-01

    The electrical resistivity of amorphous alloys with compositions: Fe 73.5Nb 3Cu 1Si 13.5B 9, Fe 86Zr 7Cu 1B 6 and Co 80Nb 8B 12 has been studied in the temperature range from 300 to 1100 K, where crystallization occurs. The products of crystallization and the grain size have been studied by X-ray diffraction. In a first step, all the alloys crystallize with small grains of a few nanometers in diameter (nanocrystalline state), and the resistivity behavior at this process accounts for the difference between the amorphous and nanocrystalline phases. The nanocrystalline phases are: α-Fe-Si, α-Fe and fcc Co for the three compounds studied respectively. A second process, at which grain growth and precipitation of intermetallic compounds and borides takes place, has been found for all the alloys. The resistivity is sensitive, not only to the total transformed sample amount, but to the topological distribution of the crystalline phases, and therefore shows a more complex behavior than other well established techniques, as differential scanning calorimetry. This supplementary information given by the resistivity is also discussed.

  13. Positron lifetime measurements on electron irradiated amorphous alloys

    International Nuclear Information System (INIS)

    Moser, P.; Hautojaervi, P.; Chamberod, A.; Yli-Kauppila, J.; Van Zurk, R.

    1981-08-01

    Great advance in understanding the nature of point defects in crystalline metals has been achieved by employing positron annihilation technique. Positrons detect vacancy-type defects and the lifetime value of trapped positrons gives information on the size of submicroscopic vacancy aglomerates and microvoids. In this paper it is shown that low-temperature electron irradiations can result in a considerable increase in the positron lifetimes in various amorphous alloys because of the formation of vacancy-like defects which, in addition of the pre-existing holes, are able to trap positrons. Studied amorphous alloys were Fe 80 B 20 , Pd 80 Si 20 , Cu 50 Ti 50 , and Fe 40 Ni 40 P 14 B 6 . Electron irradiations were performed with 3 MeV electrons at 20 K to doses around 10 19 e - /cm 2 . After annealing positron lifetime spectra were measured at 77 K

  14. Comparative investigation of smooth polycrystalline diamond films on dental burs by chemical vapor deposition

    Science.gov (United States)

    Sein, Htet; Ahmed, Waqar; Rego, Christopher; Jackson, Mark; Polini, Riccardo

    2006-04-01

    Depositions of hot filament chemical vapor-deposited diamond on cobalt-cemented tungsten carbide (WC-Co) rotary cutting dental burs are presented. Conventional dental tools made of sintered polycrystalline diamond have a number of problems associated with the heterogeneity of the crystallite, decreased cutting efficiency, and short life. A preferential (111) faceted diamond was obtained after 15 h of deposition at a growth rate of 1.1 µm/h. Diamond-coated WC-Co dental burs and conventional sintered burs are mainly used in turning, milling, and drilling operations for machining metal ceramic hard alloys such as CoCr, composite teeth, and aluminum alloy in the dental laboratory. The influence of structure, the mechanical characteristics of both diamond grains and hard alloys on the wear behavior, as well as the regimen of grinding on diamond wear are considered. Erosion wear properties are also investigated under air-sand erosion testing. After machining with excessive cutting performance, calculations can be made on flank and crater wear areas. Diamond-coated WC-Co dental burs offered significantly better erosion and wear resistance compared with uncoated WC-Co tools and sintered burs.

  15. Amorphization and crystallization of Zr{sub 66.7-x}Cu{sub 33.3}Nb{sub x} (x = 0, 2, 4) alloys during mechanical alloying

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yan [Key Laboratory of Liquid Structure and Heredity of Materials, Shandong University, 73 Jingshi Road, Jinan 250061 (China); School of Materials Science and Engineering, University of Jinan, 106 Jiwei Road, Jinan 250022 (China); Chen Xiuxiu [School of Materials Science and Engineering, University of Jinan, 106 Jiwei Road, Jinan 250022 (China); Geng Haoran [School of Materials Science and Engineering, University of Jinan, 106 Jiwei Road, Jinan 250022 (China)], E-mail: mse_wangy@ujn.edu.cn; Yang Zhongxi [Key Laboratory of Liquid Structure and Heredity of Materials, Shandong University, 73 Jingshi Road, Jinan 250061 (China); School of Materials Science and Engineering, University of Jinan, 106 Jiwei Road, Jinan 250022 (China)

    2009-04-17

    In the present paper, the effect of Nb and different rotation speeds on the amorphization and crystallization of Zr{sub 66.7-x}Cu{sub 33.3}Nb{sub x} (x = 0, 2, 4) alloys during mechanical alloying has been investigated using X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), and differential scanning calorimetry (DSC). The results show that the minor addition of Nb can shorten the start time of the amorphization reaction, improve the glass forming ability of Zr-Cu alloys, but cannot promote the formation of a single amorphous phase at a lower rotation speed of 200 rpm. The glass forming ability of the Zr{sub 66.7-x}Cu{sub 33.3}Nb{sub x} (x = 0, 2, 4) alloys increases with increasing Nb additions. At a higher rotation speed of 350 rpm, a single amorphous phase of Zr{sub 66.7-x}Cu{sub 33.3}Nb{sub x} (x = 0, 2, 4) can be successfully fabricated. Moreover, the Nb addition into Zr-Cu alloys can accelerate the amorphization process and improve the stability of the amorphous phase against the mechanically induced crystallization. Furthermore, the amorphous Zr{sub 66.7}Cu{sub 33.3} phase gradually transforms into a metastable fcc-Zr{sub 2}Cu phase with increasing milling time.

  16. Thermal annealing of amorphous Ti-Si-O thin films

    OpenAIRE

    Hodroj , Abbas; Chaix-Pluchery , Odette; Audier , Marc; Gottlieb , Ulrich; Deschanvres , Jean-Luc

    2008-01-01

    International audience; Ti-Si-O thin films were deposited using an aerosol chemical vapor deposition process at atmospheric pressure. The film structure and microstructure were analysed using several techniques before and after thermal annealing. Diffraction results indicate that the films remain X-ray amorphous after annealing whereas Fourier transform infrared spectroscopy gives evidence of a phase segregation between amorphous SiO2 and well crystallized anatase TiO2. Crystallization of ana...

  17. Amorphous carbon nanofibres inducing high specific capacitance of deposited hydrous ruthenium oxide

    International Nuclear Information System (INIS)

    Barranco, V.; Pico, F.; Ibanez, J.; Lillo-Rodenas, M.A.; Linares-Solano, A.; Kimura, M.; Oya, A.; Rojas, R.M.; Amarilla, J.M.; Rojo, J.M.

    2009-01-01

    Composites consisting of ruthenium oxide particles deposited on amorphous carbon nanofibres are prepared by a repetitive impregnation procedure. The choice of amorphous carbon nanofibres as support of amorphous ruthenium oxide leads to composites in which the deposited oxide consists of aggregates of extremely small primary particles (1-1.5 nm-size) and showing high porosity (specific surface area of 450 m 2 g -1 ). This special deposition of the oxide seems to favour: (i) high oxide capacitance (1000 Fg -1 ) at high oxide loadings (up to 20 wt%) and (ii) high capacitance retention (ca. 80% from the initial oxide capacitance) at high current densities (200 mA cm -2 ). Amorphous carbon nanofibres are suitable supports for amorphous ruthenium oxide and perhaps for other amorphous oxides acting as active electrode materials.

  18. Influence of structural relaxation and partial devitrification on the corrosion resistance of Fe78B13Si9 amorphous alloy

    International Nuclear Information System (INIS)

    Souza, C.A.C.; Politi, F.S.; Kiminami, C.S.

    1998-01-01

    Amorphous alloys obtained by rapid solidification from the melt exhibit a similar structure to those observed in the liquid state, i.e., without long range ordering, in such a way that the constituents of the alloy usually are randomly and homogeneously distributed. Amorphous alloys, depending on their composition, may exhibit interesting characteristics such as very soft magnetic properties and improved resistance to corrosion. The high corrosion resistance of these alloys is attributed mainly to a higher rate of dissolution of passivating elements in the amorphous state. In addition, amorphous alloys are chemically homogeneous and free of defects such as grain boundaries, precipitates and segregation, which are favorable sites for corrosion. The corrosion resistance of amorphous alloys also depends on their thermal history. Several authors have reported that structural changes, such as structural relaxation and devitrification caused by annealing, change significantly the corrosion properties of these alloys. The purpose of this paper is to study corrosion resistance of the amorphous FeBSi alloy and the effects of structural changes such as structural relaxation and partial crystallization caused by annealing

  19. Hydroxyapatite formation on biomedical Ti–Ta–Zr alloys by magnetron sputtering and electrochemical deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyun-Ju [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Jeong, Yong-Hoon [Biomechanics and Tissue Engineering Laboratory, Division of Orthodontics, College of Dentistry, The Ohio State University, Columbus, OH (United States); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Brantley, William A. [Division of Prosthodontics and Restorative Science, College of Dentistry, The Ohio State University, Columbus, OH (United States)

    2014-12-01

    The purpose of this study was to investigate hydroxyapatite formation on Ti-25Ta-xZr titanium alloys resulting from radio-frequency magnetron sputtering and electrochemical deposition. Electrochemical deposition of hydroxyapatite (HA) was first carried out using a cyclic voltammetry (CV) method at 80 °C in 5 mM Ca (NO{sub 3}){sub 2} + 3 mM NH{sub 4}H{sub 2}PO{sub 4}. Then a physical vapor deposition (PVD) coating was obtained by a radio-frequency (RF) magnetron sputtering technique. The microstructures, phase transformations, and morphologies of the hydroxyapatite films deposited on the titanium alloys were analyzed by optical microscopy (OM), X-ray diffractometer (XRD), energy dispersive X-ray spectroscopy (EDS) and field-emission scanning electron microscopy (FE-SEM). The morphologies of electrochemically deposited HA showed plate-like shapes on the titanium alloys, and the morphologies of the RF-sputtered HA coating had the appearance droplet particles on the plate-like precipitates that had formed by electrochemical deposition. For the RF-sputtered HA coatings, the Ca/P ratio was increased, compared to that for the electrochemically deposited HA surface. Moreover, the RF-sputtered HA coating, consisting of agglomerated droplet particles on the electrochemically deposited HA surface, had better wettability compared to the bulk titanium alloy surface. - Highlights: • Hydroxyapatite (HA) was deposited on Ti–Ta–Zr alloys by radio-frequency (RF) magnetron sputtering and a cyclic voltammetry. • The morphologies of the RF-sputtered HA coating on electrochemical deposits presented plate-like shapes with a droplet particle. • The Ca/P ratio for RF-sputtered HA coatings was greater than that for electrochemical deposited HA coatings. • The RF-sputtered and electrochemical HA coatings had superior wettability compared to the electrochemically deposited coatings.

  20. Hydroxyapatite formation on biomedical Ti–Ta–Zr alloys by magnetron sputtering and electrochemical deposition

    International Nuclear Information System (INIS)

    Kim, Hyun-Ju; Jeong, Yong-Hoon; Choe, Han-Cheol; Brantley, William A.

    2014-01-01

    The purpose of this study was to investigate hydroxyapatite formation on Ti-25Ta-xZr titanium alloys resulting from radio-frequency magnetron sputtering and electrochemical deposition. Electrochemical deposition of hydroxyapatite (HA) was first carried out using a cyclic voltammetry (CV) method at 80 °C in 5 mM Ca (NO 3 ) 2 + 3 mM NH 4 H 2 PO 4 . Then a physical vapor deposition (PVD) coating was obtained by a radio-frequency (RF) magnetron sputtering technique. The microstructures, phase transformations, and morphologies of the hydroxyapatite films deposited on the titanium alloys were analyzed by optical microscopy (OM), X-ray diffractometer (XRD), energy dispersive X-ray spectroscopy (EDS) and field-emission scanning electron microscopy (FE-SEM). The morphologies of electrochemically deposited HA showed plate-like shapes on the titanium alloys, and the morphologies of the RF-sputtered HA coating had the appearance droplet particles on the plate-like precipitates that had formed by electrochemical deposition. For the RF-sputtered HA coatings, the Ca/P ratio was increased, compared to that for the electrochemically deposited HA surface. Moreover, the RF-sputtered HA coating, consisting of agglomerated droplet particles on the electrochemically deposited HA surface, had better wettability compared to the bulk titanium alloy surface. - Highlights: • Hydroxyapatite (HA) was deposited on Ti–Ta–Zr alloys by radio-frequency (RF) magnetron sputtering and a cyclic voltammetry. • The morphologies of the RF-sputtered HA coating on electrochemical deposits presented plate-like shapes with a droplet particle. • The Ca/P ratio for RF-sputtered HA coatings was greater than that for electrochemical deposited HA coatings. • The RF-sputtered and electrochemical HA coatings had superior wettability compared to the electrochemically deposited coatings

  1. Optical, mechanical and surface properties of amorphous carbonaceous thin films obtained by plasma enhanced chemical vapor deposition and plasma immersion ion implantation and deposition

    Science.gov (United States)

    Turri, Rafael G.; Santos, Ricardo M.; Rangel, Elidiane C.; da Cruz, Nilson C.; Bortoleto, José R. R.; Dias da Silva, José H.; Antonio, César Augusto; Durrant, Steven F.

    2013-09-01

    Diverse amorphous hydrogenated carbon-based films (a-C:H, a-C:H:F, a-C:H:N, a-C:H:Cl and a-C:H:Si:O) were obtained by radiofrequency plasma enhanced chemical vapor deposition (PECVD) and plasma immersion ion implantation and deposition (PIIID). The same precursors were used in the production of each pair of each type of film, such as a-C:H, using both PECVD and PIIID. Optical properties, namely the refractive index, n, absorption coefficient, α, and optical gap, ETauc, of these films were obtained via transmission spectra in the ultraviolet-visible near-infrared range (wavelengths from 300 to 3300 nm). Film hardness, elastic modulus and stiffness were obtained as a function of depth using nano-indentation. Surface energy values were calculated from liquid drop contact angle data. Film roughness and morphology were assessed using atomic force microscopy (AFM). The PIIID films were usually thinner and possessed higher refractive indices than the PECVD films. Determined refractive indices are consistent with literature values for similar types of films. Values of ETauc were increased in the PIIID films compared to the PECVD films. An exception was the a-C:H:Si:O films, for which that obtained by PIIID was thicker and exhibited a decreased ETauc. The mechanical properties - hardness, elastic modulus and stiffness - of films produced by PECVD and PIIID generally present small differences. An interesting effect is the increase in the hardness of a-C:H:Cl films from 1.0 to 3.0 GPa when ion implantation is employed. Surface energy correlates well with surface roughness. The implanted films are usually smoother than those obtained by PECVD.

  2. Optical, mechanical and surface properties of amorphous carbonaceous thin films obtained by plasma enhanced chemical vapor deposition and plasma immersion ion implantation and deposition

    International Nuclear Information System (INIS)

    Turri, Rafael G.; Santos, Ricardo M.; Rangel, Elidiane C.; Cruz, Nilson C. da; Bortoleto, José R.R.; Dias da Silva, José H.; Antonio, César Augusto; Durrant, Steven F.

    2013-01-01

    Diverse amorphous hydrogenated carbon-based films (a-C:H, a-C:H:F, a-C:H:N, a-C:H:Cl and a-C:H:Si:O) were obtained by radiofrequency plasma enhanced chemical vapor deposition (PECVD) and plasma immersion ion implantation and deposition (PIIID). The same precursors were used in the production of each pair of each type of film, such as a-C:H, using both PECVD and PIIID. Optical properties, namely the refractive index, n, absorption coefficient, α, and optical gap, E Tauc , of these films were obtained via transmission spectra in the ultraviolet–visible near-infrared range (wavelengths from 300 to 3300 nm). Film hardness, elastic modulus and stiffness were obtained as a function of depth using nano-indentation. Surface energy values were calculated from liquid drop contact angle data. Film roughness and morphology were assessed using atomic force microscopy (AFM). The PIIID films were usually thinner and possessed higher refractive indices than the PECVD films. Determined refractive indices are consistent with literature values for similar types of films. Values of E Tauc were increased in the PIIID films compared to the PECVD films. An exception was the a-C:H:Si:O films, for which that obtained by PIIID was thicker and exhibited a decreased E Tauc . The mechanical properties – hardness, elastic modulus and stiffness – of films produced by PECVD and PIIID generally present small differences. An interesting effect is the increase in the hardness of a-C:H:Cl films from 1.0 to 3.0 GPa when ion implantation is employed. Surface energy correlates well with surface roughness. The implanted films are usually smoother than those obtained by PECVD.

  3. Amorphous bimetallic alloys prepared by steam condensation

    International Nuclear Information System (INIS)

    Drago, V.

    1988-01-01

    Amorphous alloys of MnSn are prepared by steam condensation, in a substratum with a temperature near of the liquid helium. The magnetic and paramagnetic hyperfine spectrum and the ordination temperature by Moessbauer effect 119Sn are measured. A diagram of magnetic phase is proposed, basing on the measures of Moessbauer effect. (C.G.C.) [pt

  4. Surface crystallization and magnetic properties of amorphous Fe80B20 alloy

    International Nuclear Information System (INIS)

    Vavassori, P.; Ronconi, F.; Puppin, E.

    1997-01-01

    We have studied the effects of surface crystallization on the magnetic properties of Fe 80 B 20 amorphous alloys. The surface magnetic properties have been studied with magneto-optic Kerr measurements, while those of bulk with a vibrating sample magnetometer. This study reveals that surface crystallization is similar to the bulk process but occurs at a lower temperature. At variance with previous results on other iron-based amorphous alloys the surface crystalline layer does not induce bulk magnetic hardening. Furthermore, both the remanence to saturation ratio and the bulk magnetic anisotropy do not show appreciable variations after the formation of the surface crystalline layer. The Curie temperature of the surface layer is lower with respect to the bulk of the sample. These effects can be explained by a lower boron concentration in the surface region of the as-cast amorphous alloy. Measurements of the chemical composition confirm a reduction of boron concentration in the surface region. copyright 1997 American Institute of Physics

  5. Research on Zr50Al15-xNi10Cu25Yx amorphous alloys prepared by mechanical alloying with commercial pure element powders

    International Nuclear Information System (INIS)

    Long Woyun; Ouyang Xueqiong; Luo Zhiwei; Li Jing; Lu Anxian

    2011-01-01

    Amorphous Zr 50 Al 15-x Ni 10 Cu 25 Y x alloy powders were fabricated by mechanical alloying at low vacuum with commercial pure element powders. The effects on glass forming ability of Al partial substituted by Y in Zr 50 Al 15 Ni 10 Cu 25 and thermal stability of Si 3 N 4 powders addition were investigated. The as-milled powders were characterized by X-ray diffraction, scanning electron microscopy and differential scanning calorimeter. The results show that partial substitution of Al can improve the glass forming ability of Zr 50 Al 15 Ni 10 Cu 25 alloy. Minor Si 3 N 4 additions raise the crystallization activation energy of the amorphous phase and thus improve its thermal stability. -- Research Highlights: → ZrAlNiCu amorphous alloys can be synthesized by MA in low cost. → Appropriate amount of Al substituted by Y in ZrAlNiCu alloy can improve its glass forming ability. → A second phase particle addition helps to improve the thermal stability of the amorphous matrix.

  6. Simulation and Experimental Study of Photogeneration and Recombination in Amorphous-Like Silicon Thin Films Deposited by 27.12 MHz Plasma-Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Chia-Hsun Hsu

    2013-01-01

    Full Text Available Amorphous-like silicon (a-Si:H-like thin films are prepared by 27.12 MHz plasma-enhanced chemical vapor deposition technique. The films are applied to p-i-n single junction thin film solar cells with varying i-layer thickness to observe the effects on the short-circuit current density, as well as the open-circuit voltage, fill factor, and conversion efficiency. The most significant experimental result is that Jsc has two different behaviors with increasing the i-layer thickness, which can be related to carrier collection efficiency in the long wavelength region. Furthermore, technology computer-aided design simulation software is used to gain better insight into carrier generation and recombination of the solar cells, showing that for the i-layer thickness of 200 to 300 nm the generation dominates the carrier density and thus Jsc, whereas for the i-layer thickness of 300 to 400 nm the recombination becomes the leading factor. The simulation results of cell performances are in good agreement with experimental data, indicating that our simulation has great reliability. In addition, the a-Si:H-like solar cells have low light-induced degradation, which in turn can have a great potential to be used for stable and high-efficiency solar cells.

  7. Laser vapor phase deposition of semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Karlov, N.V.; Luk' ianchuk, B.S.; Sisakian, E.V.; Shafeev, G.A.

    1987-06-01

    The pyrolytic effect of IR laser radiation is investigated with reference to the initiation and control of the vapor phase deposition of semiconductor films. By selecting the gas mixture composition and laser emission parameters, it is possible to control the deposition and crystal formation processes on the surface of semiconductors, with the main control action achieved due to the nonadiabatic kinetics of reactions in the gas phase and high temperatures in the laser heating zone. This control mechanism is demonstrated experimentally during the laser vapor deposition of germanium and silicon films from tetrachlorides on single-crystal Si and Ge substrates. 5 references.

  8. Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiOx layers for application in solar cells

    Science.gov (United States)

    Klingsporn, M.; Kirner, S.; Villringer, C.; Abou-Ras, D.; Costina, I.; Lehmann, M.; Stannowski, B.

    2016-06-01

    Nanocrystalline silicon suboxides (nc-SiOx) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO0.8:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.

  9. Microstructure and surface chemistry of amorphous alloys important to their friction and wear behavior

    Science.gov (United States)

    Miyoshi, K.; Buckley, D. H.

    1986-01-01

    An investigation was conducted to examine the microstructure and surface chemistry of amorphous alloys, and their effects on tribological behavior. The results indicate that the surface oxide layers present on amorphous alloys are effective in providing low friction and a protective film against wear in air. Clustering and crystallization in amorphous alloys can be enhanced as a result of plastic flow during the sliding process at a low sliding velocity, at room temperature. Clusters or crystallines with sizes to 150 nm and a diffused honeycomb-shaped structure are produced on sizes to 150 nm and a diffused honeycomb-shaped structure are produced on the wear surface. Temperature effects lead to drastic changes in surface chemistry and friction behavior of the alloys at temperatures to 750 C. Contaminants can come from the bulk of the alloys to the surface upon heating and impart to the surface oxides at 350 C and boron nitride above 500 C. The oxides increase friction while the boron nitride reduces friction drastically in vacuum.

  10. Crystal field symmetry and magnetic interactions in rare earth-silver amorphous alloys

    International Nuclear Information System (INIS)

    Pappa, Catherine.

    1979-01-01

    A study has been made of the following rare earth based amorphous alloys: Ndsub(x)Agsub(100-x), Prsub(x)Agsub(100-x), Gdsub(x)Agsub(100-x), Tlsub(x)Agsub(100-x). In rare earth based amorphous alloys, the symmetrical distribution of the crystal field is very wide and hence not very sensitive to the content of the alloys. The existence of preponderant negative magnetic interactions leads to an upset magnetic order, the magnetization of a small volume not being nil. The magnetic behaviour of alloys with a small concentration of rare earths is governed by the existence of clusters of statistical origin, within which a rare earth ion has at least one other rare earth ion in the position of first neighbour. The presence of a high anisotropy at low temperatures make the magnetic interactions between clusters inoperative [fr

  11. Electron irradiation effects in amorphous antimony thin films obtained by cluster-beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fuchs, G.; Treilleux, M.; Santos Aires, F.; Cabaud, B.; Melinon, P.; Hoareau, A. (Lyon-1 Univ., 69 - Villeurbanne (France))

    1991-03-01

    In order to understand the differences existing between films obtained with a classical molecular beam deposition (MBD) and the new low-energy cluster beam deposition (LECBD), transmission electron microscopy has been used to characterize the first stages of antimony LECBD. Antimony deposits are discontinuous and amorphous up to 2 nm in thickness. They are formed with isolated amorphous antimony particles surrounded by an amorphous antimony oxide shell. Moreover, under electron beam exposure in the microscope, an amorphous-crystal transformation has been observed in the oxide shell. Electron irradiation induces the formation of a crystallized antimony oxide (Sb{sub 2}O{sub 3}) around the amorphous antimony core. (author).

  12. Heterogeneous nucleation of amorphous alloys on catalytic nanoparticles to produce 2D patterned nanocrystal arrays

    International Nuclear Information System (INIS)

    Gangopadhyay, A K; Krishna, H; Favazza, C; Miller, C; Kalyanaraman, R

    2007-01-01

    Templates are widely used to produce artificial nanostructures. Here, laser-assisted self-organization has been used to form one- and two-dimensional (D) nanoarrays of Cu nanocrystals. Using these nanoarrays as a template, a 2D patterned ferromagnetic nanostructure of FeCrSi nanocrystals has been produced by heterogeneous nucleation and growth of nanocrystals by partial devitrification from an amorphous Fe 64.5 Cr 10 Si 13.5 B 9 Nb 3 alloy with the Cu nanoparticles acting as catalytic nucleation sites. The interaction among the ferromagnetic nanocrystals via the residual amorphous matrix can be controlled by suitable choice of the amorphous alloy composition. Although demonstrated for a ferromagnetic system, the processing method may have much wider applicability for producing artificial nanostructures of a wide variety of materials when materials-specific catalysts and amorphous alloy compositions are judiciously chosen

  13. Preparation and structure of porous dielectrics by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Gates, S. M.; Neumayer, D. A.; Sherwood, M. H.; Grill, A.; Wang, X.; Sankarapandian, M.

    2007-01-01

    The preparation of ultralow dielectric constant porous silicon, carbon, oxygen, hydrogen alloy dielectrics, called 'pSiCOH', using a production 200 mm plasma enhanced chemical vapor deposition tool and a thermal treatment is reported here. The effect of deposition temperature on the pSiCOH film is examined using Fourier transform infrared (FTIR) spectroscopy, dielectric constant (k), and film shrinkage measurements. For all deposition temperatures, carbon in the final porous film is shown to be predominantly Si-CH 3 species, and lower k is shown to correlate with increased concentration of Si-CH 3 . NMR and FTIR spectroscopies clearly detect the loss of a removable, unstable, hydrocarbon (CH x ) phase during the thermal treatment. Also detected are increased cross-linking of the Si-O skeleton, and concentration changes for three distinct structures of carbon. In the as deposited films, deposition temperature also affects the hydrocarbon (CH x ) content and the presence of C=O and C=C functional groups

  14. New Approaches to the Computer Simulation of Amorphous Alloys: A Review.

    Science.gov (United States)

    Valladares, Ariel A; Díaz-Celaya, Juan A; Galván-Colín, Jonathan; Mejía-Mendoza, Luis M; Reyes-Retana, José A; Valladares, Renela M; Valladares, Alexander; Alvarez-Ramirez, Fernando; Qu, Dongdong; Shen, Jun

    2011-04-13

    In this work we review our new methods to computer generate amorphous atomic topologies of several binary alloys: SiH, SiN, CN; binary systems based on group IV elements like SiC; the GeSe 2 chalcogenide; aluminum-based systems: AlN and AlSi, and the CuZr amorphous alloy. We use an ab initio approach based on density functionals and computationally thermally-randomized periodically-continued cells with at least 108 atoms. The computational thermal process to generate the amorphous alloys is the undermelt-quench approach, or one of its variants, that consists in linearly heating the samples to just below their melting (or liquidus) temperatures, and then linearly cooling them afterwards. These processes are carried out from initial crystalline conditions using short and long time steps. We find that a step four-times the default time step is adequate for most of the simulations. Radial distribution functions (partial and total) are calculated and compared whenever possible with experimental results, and the agreement is very good. For some materials we report studies of the effect of the topological disorder on their electronic and vibrational densities of states and on their optical properties.

  15. New amorphous and nanocrystalline alloys based on the Ni-Si-B system

    Energy Technology Data Exchange (ETDEWEB)

    Battezzati, L.; Rizzi, P.; Romussi, S. [Turin Univ. (Italy). Dipt. di Chimica

    1998-08-01

    The glass formation and crystallization of a Ni{sub 36}Fe{sub 32}Ta{sub 7}Si{sub 8}B{sub 17} alloy is reported. In its equilibrium state it has a complex constitution made of at least four phases. It starts melting at 1227 K and displays a liquidus at 1460 K, but it shows a tendency to undercool even on cooling at 10 K/min in a HTDSC cell. Amorphous ribbons were produced by melt spinning. In DSC experiments the crystallization of the amorphous alloy occurs with a primary reaction giving a peak skewed on the high temperature side with onset at 836 K using an heating rate of 40 K/min. XRD analysis and TEM observations demonstrate that crystals with size below 10 nm and lattice parameter close to that of Ni are formed during this transformation. The mechanism of crystallization is very sensitive to changes in composition. In fact, nanocrystals are not found in alloys easily amorphized as the present one but containing a different ratio of metallic elements. (orig.) 16 refs.

  16. Heterogeneous nucleation of amorphous alloys on catalytic nanoparticles to produce 2D patterned nanocrystal arrays

    Energy Technology Data Exchange (ETDEWEB)

    Gangopadhyay, A K [Department of Physics, Washington University in St Louis, MO 63130 (United States); Krishna, H [Department of Physics, Washington University in St Louis, MO 63130 (United States); Favazza, C [Department of Physics, Washington University in St Louis, MO 63130 (United States); Miller, C [Center for Materials Innovation, Washington University in St Louis, MO 63130 (United States); Kalyanaraman, R [Department of Physics, Washington University in St Louis, MO 63130 (United States)

    2007-12-05

    Templates are widely used to produce artificial nanostructures. Here, laser-assisted self-organization has been used to form one- and two-dimensional (D) nanoarrays of Cu nanocrystals. Using these nanoarrays as a template, a 2D patterned ferromagnetic nanostructure of FeCrSi nanocrystals has been produced by heterogeneous nucleation and growth of nanocrystals by partial devitrification from an amorphous Fe{sub 64.5}Cr{sub 10}Si{sub 13.5}B{sub 9}Nb{sub 3} alloy with the Cu nanoparticles acting as catalytic nucleation sites. The interaction among the ferromagnetic nanocrystals via the residual amorphous matrix can be controlled by suitable choice of the amorphous alloy composition. Although demonstrated for a ferromagnetic system, the processing method may have much wider applicability for producing artificial nanostructures of a wide variety of materials when materials-specific catalysts and amorphous alloy compositions are judiciously chosen.

  17. AFM, SEM and in situ RHEED study of Cu texture evolution on amorphous carbon by oblique angle vapor deposition

    International Nuclear Information System (INIS)

    Tang, F.; Gaire, C.; Ye, D.-X.; Karabacak, T.; Lu, T.-M.; Wang, G.-C.

    2005-01-01

    The evolution of the crystal orientation of a Cu film grown on an amorphous carbon substrate without intentional heating under 75±6 deg. oblique angle vapor deposition was investigated ex-situ by atomic force microscopy (AFM) and scanning electron microscopy (SEM), and in-situ by reflection high-energy electron diffraction (RHEED). At the initial stage of growth ( ∼100 nm thick) the diffraction pattern started to break symmetrically from the middle of the (111) and (200) rings representing the absence of (111) and (200) planes parallel to the substrate. However, after this transition stage, at the thickness of ∼410 nm, the intensity distribution of diffraction patterns appeared asymmetric about the middle of the rings, which is interpreted as the appearance of a tilted (111) texture. Finally the diffraction patterns developed into separated short arcs and showed only a II-O (two-orientation) texture. By comparing RHEED patterns with the SEM and AFM images of the final film, we argue that the tilted columns having tilted (111) top faces dominate in the later stage of growth. Furthermore, considering the geometry of crystals and shadowing effects, we argue that the vertices of columns having the highest growth velocity normal to the substrate and therefore receiving the maximum flux will dominate the film growth and determine the tilt angle of the texture and the preference of the azimuthal angle orientation

  18. Investigation of electrochemical behaviour and structure of oxide films on Ni60Nb40 alloy in amorphous and crystalline states

    International Nuclear Information System (INIS)

    Tomashov, N.D.; Skvortsova, I.B.; Gorodetskij, A.E.; Bogomolov, D.B.

    1987-01-01

    Electrochemical properties of Ni 60 Nb 40 alloy in amorphous and crystalline states as well as structure of oxide films forming during anode polarization in electrolytes on the surface of this alloy in both its states are investigated. It is stated that increased passive ability of Ni 60 Nb 40 alloys in amorphous state and high efficiency of chlorine evolution (2 n NaCl+HCl up to pH=0) anode process in comparison with crystalline state are defined by increased homogeneity and uniformity of passive films forming on amorphous alloy and their increased electron conductivity, that is in direct dependence on different structure of passive films forming on alloys in amorphous and crystalline states

  19. Correlation between structure and optical properties of Si-based alloys deposited by PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Giangregorio, M.M. [Institute of Inorganic Methodologies and of Plasmas IMIP-CNR and INSTM-UdR Bari via Orabona, 4-70126 Bari (Italy)]. E-mail: michelaria@hotmail.com; Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas IMIP-CNR and INSTM-UdR Bari via Orabona, 4-70126 Bari (Italy); Sacchetti, A. [Institute of Inorganic Methodologies and of Plasmas IMIP-CNR and INSTM-UdR Bari via Orabona, 4-70126 Bari (Italy); Capezzuto, P. [Institute of Inorganic Methodologies and of Plasmas IMIP-CNR and INSTM-UdR Bari via Orabona, 4-70126 Bari (Italy); Bruno, G. [Institute of Inorganic Methodologies and of Plasmas IMIP-CNR and INSTM-UdR Bari via Orabona, 4-70126 Bari (Italy)

    2006-07-26

    Si-based thin films, including {mu}c-Si, Si{sub 1-x}Ge {sub x} and Si{sub 1-x}C {sub x} alloys, have been deposited by plasma enhanced chemical vapor deposition (PECVD) using SiF{sub 4}:H{sub 2}:He, SiF{sub 4}:GeH{sub 4}:H{sub 2} and SiF{sub 4}:CH{sub 4}:H{sub 2} plasmas, respectively. When SiF{sub 4} is used as Si-precursor, it is found that a low flux of CH{sub 4} or GeH{sub 4} results in incorporation of C and Ge in alloys as high as 30%. Correlations between microstructure and optical properties of films are investigated using spectroscopic ellipsometry. The role of fluorine atoms in the growth chemistry and material microstructure is discussed.

  20. Properties of amorphous FeCoB alloy particles (abstract)

    DEFF Research Database (Denmark)

    Charles, S. W.; Wells, S.; Meagher, A.

    1988-01-01

    -ray diffraction. Magnetic measurements of the saturation magnetization, coercivity, and remanence of the particles have been measured. The transition from the amorphous-to-crystalline state has been studied using differential scanning calorimetry (DSC) and thermomagnetometry up to a temperature of 450 °C (see Fig......Amorphous and crystalline alloy particles (0.05–0.5 nm) of FexCoyBz in which the ratio x:y ranges from 0 to 1 have been prepared by the borohydride reduction of iron and cobalt salts in aqueous solution. The structure of the particles has been studied using Mössbauer spectroscopy and x....... 1). It has been shown that the fraction of boron in the alloys (10–35 at. %) is dependent upon the rate of addition of salts to borohydride and the concentration of cobalt present; this in turn influences the crystallinity and magnetic properties . Journal of Applied Physics is copyrighted...

  1. Amorphous-to-crystalline phase transformation by neutron irradiation of the alloy Fe83B17

    International Nuclear Information System (INIS)

    Weis, J.; Gabris, F.; Cerven, I.; Sitek, J.

    1984-01-01

    The purpose of the present work is to investigate the structural changes of amorphous Fe 83 B 17 alloy after irradiation with fast neutrons ( > 1 MeV) and to compare with the crystallization behaviour of the amorphous Fe 83 B 17 alloy after annealing. The structural changes were studied by Moessbauer spectroscopy and X-ray diffraction with the usual Fourier analysis. (author)

  2. The corrosion behaviour and structure of amorphous and thermally treated Fe-B-Si alloys

    International Nuclear Information System (INIS)

    Raicheff, R.; Zaprianova, V.; Petrova, E.

    2003-01-01

    The corrosion behaviour of magnetic amorphous alloys Fe 78 B 13 Si 9 , Fe 81 B 13 Si 4 C 2 and Fe 67 Co 18 Bi 4 S 1 obtained by rapid quenching from the melts are investigated in a model corrosive environment of 1N H 2 SO 4 . The structure of the alloys, is, characterized by DTA, SEM, TEM, X-ray and electron diffraction techniques. The dissolution kinetics of the,alloys is studied using gravimetric and electrochemical polarization measurements. It is established that the corrosion rate of the amorphous Fe 67 Co 18 Bt 4 S 1 alloy is up to 50 times lower than that of Fe 78 Bi 3 Si 9 alloy and the addition of cobalt leads to a considerable reduction of the rates of both partial corrosion reactions, while the addition of carbon results only in a moderate decrease (2-3 times) of the corrosion rate. It is also shown that the crystallization of the amorphous Fe 78 B 13 Si 9 alloy (at 700 o C for 3 h) leads to formation of multiphase structure consisting of crystalline phases α-Fe and Fe 3 (B,Si). After crystallization an increase of the rate of both hydrogen evolution and anodic dissolution reactions is observed which results in a considerable (an order of magnitude) increase of the corrosion rate of the alloy. (Original)

  3. Formation of amorphous Ti-50at.%Pt by solid state reactions during mechanical alloying

    CSIR Research Space (South Africa)

    Mahlatji, ML

    2013-10-01

    Full Text Available Mechanical alloying of an equiatomic mixture of crystalline elemental powders of Ti and Pt in a high-energy ball mill results in formation of an amorphous alloy by solid-state reactions. Mechanical alloying was carried out in an argon atmosphere...

  4. Vaporization study on lanthanum-neodymium alloys by mass-spectrometry

    International Nuclear Information System (INIS)

    Shoji, Y.; Matsui, T.

    1999-01-01

    Partial vapor pressure of Nd(g) over La x Nd 1-x alloys (x = 0.10, 0.20, 0.30, 0.40, 0.50, 0.60, 0.70, 0.80 and 0.90) was measured with a time-of-flight mass-spectrometer equipped with a tungsten Knudsen cell over the temperature range of 1474-1767 K. Thermodynamic activity of neodymium in the liquid alloys was determined by comparing the partial vapor pressure of Nd(g) over the alloys with that over the pure metal. The thermodynamic activity of lanthanum in the alloys was calculated from that of neodymium obtained experimentally in this study by graphic integration using the Gibbs-Duhem equation. Both activities for each element, thus obtained, showed positive deviations from Raoult's law over the entire compositional range. Thermodynamic quantities such as Gibbs free energy of formation, excess enthalpy etc. were also calculated from the thermodynamic activities. (orig.)

  5. EXAFS study of the stability of amorphous TbFe thin films

    International Nuclear Information System (INIS)

    Samant, M.G.; Marinero, E.E.; Robinson, C.; Cargill, G.S.

    1989-01-01

    This paper discusses the measurement of the local atomic structure of Fe in Au doped Tb-Fe thin film alloys by the use of EXAFS. The as deposited sample shows structural features which are essentially identical to those of the undoped films. Au additions stabilizes the amorphous structure against recrystallization, however, the loss of magnetic anisotropy under thermal annealing is not reduced. This demonstrates that magnetic relaxation in these alloys does not involve crystallization of the amorphous structure

  6. Moessbauer study of isothermally annealed amorphous Fe-Nb-Cu-Si-B alloys

    International Nuclear Information System (INIS)

    Sitek, J.; Toth, I.; Miglierini, M.

    1993-01-01

    Amorphous ribbons of Fe 73.5 Nb 3 Cu 1 Si 13.5 B 9 have been annealed above the crystallization temperature. Annealed samples consisted of crystalline and amorphous phases in a wide temperature range. Two samples of different thicknesses of 33 μm and 27 μm were isothermally annealed at a temperature of 545 C from 0.5 to 5 h in a vacuum furnace. The amount of crystalline phase increases rapidly in the ticker sample. The crystalline part of the Moessbauer spectrum consists of four sharp sextets which can be assigned to a DO 3 -structure FeSi alloy. After 700 C annealing the amorphous phase was not observed and the crystalline phase consisted of the DO 3 -structure FeSi alloy, paramagnetic FeNbB and presumably Fe 23 B 6 and Fe 3 SiB 2 . (orig.)

  7. One step growth of GaN/SiO2 core/shell nanowire in vapor-liquid-solid route by chemical vapor deposition technique

    Science.gov (United States)

    Barick, B. K.; Yadav, Shivesh; Dhar, S.

    2017-11-01

    GaN/SiO2 core/shell nanowires are grown by cobalt phthalocyanine catalyst assisted vapor-liquid-solid route, in which Si wafer coated with a mixture of gallium and indium is used as the source for Ga and Si and ammonia is used as the precursor for nitrogen and hydrogen. Gallium in the presence of indium and hydrogen, which results from the dissociation of ammonia, forms Si-Ga-In alloy at the growth temperature ∼910 °C. This alloy acts as the source of Si, Ga and In. A detailed study using a variety of characterization tools reveals that these wires, which are several tens of micron long, has a diameter distribution of the core ranging from 20 to 50 nm, while the thickness of the amorphous SiO2 shell layer is about 10 nm. These wires grow along [ 1 0 1 bar 0 ] direction. It has also been observed that the average diameter of these wires decreases, while their density increases as the gallium proportion in the Ga-In mixture is increased.

  8. Electrical resistivity of amorphous Fesub(1-x) Bsub(x) alloys

    International Nuclear Information System (INIS)

    Paja, A.; Stobiecki, T.

    1984-07-01

    The concentration dependence of the electrical resistivity of amorphous Fesub(1-x) Bsub(x) alloys has been studied over a broad composition range. The measurements for RF sputtered films made in the liquid helium temperature have been analyzed in the framework of the diffraction model. The calculated results are in good agreement with the experimental data in the range of concentration 0.12< x <0.37 where samples are amorphous and have a metallic character. (author)

  9. Structural investigation of Fe(Cu)ZrB amorphous alloy

    International Nuclear Information System (INIS)

    Duhaj, P.; Janickovic, D.

    1996-01-01

    The crystallization process in Fe 86 (Cu 1 )Zr 7 B 6 and Fe 87 Zr 7 B 6 is investigated using the methods of transmission electron microscopy, electron and X-ray diffraction and resistometry. Two crystallization reactions take place during thermal annealing of amorphous Fe 86 (Cu 1 )Zr 7 B 6 and Fe 87 Zr 7 B 6 alloys. In both alloys the first crystallization begins with the formation of nanocrystalline α-Fe at temperature to approximately 800 K. The second crystallization starts above 1000 K; the nanocrystalline phase dissolves and together with the remaining amorphous matrix form rough grains of α-Fe and dispersed Fe 23 Zr 6 phases. From Moessbauer spectroscopy it seems that there exist two neighbourhoods of Fe atoms in the amorphous structure. One of them is characterized by low Zr content and is responsible for the high-field component of the hyperfine field distribution p(H). The second one is rich in Zr and B and is responsible for the low-field component of p(H). This is in accord with the observation of two crystallization steps separated by a large interval of temperatures due to the existence of two chemically different regions or clusters. (orig.)

  10. A Fundamental Approach to Developing Aluminium based Bulk Amorphous Alloys based on Stable Liquid Metal Structures and Electronic Equilibrium - 154041

    Science.gov (United States)

    2017-03-28

    AFRL-AFOSR-JP-TR-2017-0027 A Fundamental Approach to Developing Aluminium -based Bulk Amorphous Alloys based on Stable Liquid-Metal Structures and...to 16 Dec 2016 4.  TITLE AND SUBTITLE A Fundamental Approach to Developing Aluminium -based Bulk Amorphous Alloys based on Stable Liquid-Metal...Air Force Research Laboratory for accurately predicting compositions of new amorphous alloys specifically based on aluminium with properties superior

  11. Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

    International Nuclear Information System (INIS)

    Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin

    2014-01-01

    High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles

  12. Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin, E-mail: mohajer@ut.ac.ir [Thin Film and Nanoelectronics Lab, Nanoelectronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran, Tehran 143957131 (Iran, Islamic Republic of)

    2014-11-10

    High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles.

  13. Mechanical Properties of TiTaHfNbZr High-Entropy Alloy Coatings Deposited on NiTi Shape Memory Alloy Substrates

    Science.gov (United States)

    Motallebzadeh, A.; Yagci, M. B.; Bedir, E.; Aksoy, C. B.; Canadinc, D.

    2018-04-01

    TiTaHfNbZr high-entropy alloy (HEA) thin films with thicknesses of about 750 and 1500 nm were deposited on NiTi substrates by RF magnetron sputtering using TiTaHfNbZr equimolar targets. The thorough experimental analysis on microstructure and mechanical properties of deposited films revealed that the TiTaHfNbZr films exhibited amorphous and cauliflower-like structure, where grain size and surface roughness increased concomitant with film thickness. More importantly, the current findings demonstrate that the TiTaHfNbZr HEA films with mechanical properties of the same order as those of the NiTi substrate constitute promising biomedical coatings effective in preventing Ni release.

  14. Mechanical Properties of TiTaHfNbZr High-Entropy Alloy Coatings Deposited on NiTi Shape Memory Alloy Substrates

    Science.gov (United States)

    Motallebzadeh, A.; Yagci, M. B.; Bedir, E.; Aksoy, C. B.; Canadinc, D.

    2018-06-01

    TiTaHfNbZr high-entropy alloy (HEA) thin films with thicknesses of about 750 and 1500 nm were deposited on NiTi substrates by RF magnetron sputtering using TiTaHfNbZr equimolar targets. The thorough experimental analysis on microstructure and mechanical properties of deposited films revealed that the TiTaHfNbZr films exhibited amorphous and cauliflower-like structure, where grain size and surface roughness increased concomitant with film thickness. More importantly, the current findings demonstrate that the TiTaHfNbZr HEA films with mechanical properties of the same order as those of the NiTi substrate constitute promising biomedical coatings effective in preventing Ni release.

  15. Crystallization of the amorphous Fe{sub 80}Zr{sub 12}B{sub 8} alloy under controlled heating

    Energy Technology Data Exchange (ETDEWEB)

    Huang, H. [School of Engineering (H6), University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom); Shao, G. [Centre for Materials Research and Innovation, University of Bolton, Bolton BL3 5AB (United Kingdom)], E-mail: G.Shao@bolton.ac.uk; Tsakiropoulos, P. [Department of Engineering Materials, Sir Robert Hadfirld Building, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)

    2008-07-14

    The devitrification process of amorphous Fe{sub 80}Zr{sub 12}B{sub 8} alloy ribbons were studied under controlled thermal conditions. The major crystallization event during continuous heating with differential scanning calorimetory (DSC) is dictated by diffusion controlled growth and the associated atom mobility of the slow diffusing species Zr. The existence of prior nano-crystals formed by pre-annealing below the crystallization temperature had little effect on the major crystallization temperature. The crystallization sequence during heating was: amorphous {yields} amorphous + {alpha}-Fe + Fe{sub 3}Zr(B) {yields} amorphous + {alpha}-Fe + Fe{sub 3}Zr(B) + Fe{sub 2}Zr. Different from previous findings in alloys of lower Zr and B contents, the peak for the crystallization of the {alpha}-Fe phase alone is missing in the DSC traces of this alloy.

  16. Self-assembled GaN nano-column grown on Si(111) substrate using Au+Ga alloy seeding method by metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Shim, Byung-Young; Ko, Eun-A; Song, Jae-Chul; Kang, Dong-Hun; Kim, Dong-Wook; Lee, In-Hwan; Kannappan, Santhakumar; Lee, Cheul-Ro

    2007-01-01

    Single-crystal GaN nano-column arrays were grown on Au-coated silicon (111) substrate by Au-Ga alloy seeding method using metalorganic chemical vapor deposition (MOCVD). The nano-column arrays were studied as a function of growth parameters and Au thin film thickness. The diameter and length of the as-grown nano-column vary from 100 to 500 nm and 4 to 6 μm, respectively. The surface morphology and optical properties of the nano-columns were investigated using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), cathodoluminescence (CL) and photoluminescence (PL). The Au+Ga alloy droplets were found to be uniformly distributed on silicon surface. Further, SEM image reveals a vertical growth and cylindrical in shape GaN nano-column. The chemical composition of the nano-column, which composed of gallium and nitrogen ions, was estimated by EDX. CL reveals a strong band edge emission from the GaN nano-column. PL spectra show a peak at 365.7 nm with a full-width half maximum (FWHM) of 65 meV which indicates good optical quality GaN nano-column with low dislocation density. Our results suggest that single crystal GaN nano-column can be grown on Au+Ga alloy on silicon substrate with a low dislocation density for better device performances. (author)

  17. Formation of nanocrystalline and amorphous phase of Al-Pb-Si-Sn-Cu powder during mechanical alloying

    International Nuclear Information System (INIS)

    Ran Guang; Zhou Jingen; Xi Shengqi; Li Pengliang

    2006-01-01

    Al-15%Pb-4%Si-1%Sn-1.5%Cu alloys (mass fraction, %) were prepared by mechanical alloying (MA). Phase transformation and microstructure characteristics of the alloy powders were investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The results show that the nanocrystalline supersaturated solid solutions and amorphous phase in the powders are obtained during MA. The effect of ball milling is more evident to lead than to aluminum. During MA, the mixture powders are firstly fined, alloyed, nanocrystallized and then the nanocrystalline partly transforms to amorphous phase. A thermodynamic model is developed based on semi-experimental theory of Miedema to calculate the driving force for phase evolution. The thermodynamic analysis shows that there is no chemical driving force to form a crystalline solid solution from the elemental components. But for the amorphous phase, the Gibbs free energy is higher than 0 for the alloy with lead content in the ranges of 0-86.8 at.% and 98.4-100 at.% and lower than 0 in range of 86.8-98.4 at.%. For the Al-2.25 at.%Pb (Al-15%Pb, mass fraction, %), the driving force for formation of amorphization and nanocrystalline supersaturated solid solutions are provided not by the negative heat of mixing but by mechanical work

  18. Resistivity and magnetoresistivity of amorphous rare-earth alloys

    Science.gov (United States)

    Borchi, E.; Poli, M.; De Gennaro, S.

    1982-05-01

    The resistivity and magnetoresistivity of amorphous rare-earth alloys are studied starting from the general approach of Van Peski-Tinbergen and Dekker. The random axial crystal-field and the magnetic correlations between the rare-earth ions are consistently taken into account. The characteristic features of the available experimental data are explained both of the case of random ferromagnetic and antiferromagnetic order.

  19. Oxygen Barrier Coating Deposited by Novel Plasma-enhanced Chemical Vapor Deposition

    DEFF Research Database (Denmark)

    Jiang, Juan; Benter, M.; Taboryski, Rafael Jozef

    2010-01-01

    We report the use of a novel plasma-enhanced chemical vapor deposition chamber with coaxial electrode geometry for the SiOx deposition. This novel plasma setup exploits the diffusion of electrons through the inner most electrode to the interior samples space as the major energy source. This confi......We report the use of a novel plasma-enhanced chemical vapor deposition chamber with coaxial electrode geometry for the SiOx deposition. This novel plasma setup exploits the diffusion of electrons through the inner most electrode to the interior samples space as the major energy source...... effect of single-layer coatings deposited under different reaction conditions was studied. The coating thickness and the carbon content in the coatings were found to be the critical parameters for the barrier property. The novel barrier coating was applied on different polymeric materials...

  20. Ab initio molecular dynamics simulation of the liquid and amorphous structure of Mg65Cu25Gd10 alloy

    International Nuclear Information System (INIS)

    Gao, R.; Zhao, Y.F.; Liu, X.J.; Liu, Z.K.; Hui, X.

    2013-01-01

    The liquid and amorphous structures of Mg 65 Cu 25 Gd 10 alloy were studied by using molecular dynamics methods within the frame of density functional theory. The generalized and partial pair correlation functions, structure factors, coordination numbers and bond pairs for this alloy were analyzed. It is shown that this alloy exhibit typical characterization of liquid structure at the temperature higher than 750 K, and of amorphous structure with shoulders on the second diffuse peaks of the pair correlation functions curves at room temperature. The local short and medium range ordering tends to be increased with the decrease of temperature. Both the liquid and the amorphous structures are mainly composed of icosahedral type of bond pairs. Perfect and distorted icosahedra can be differentiated from the atomic configuration of the amorphous alloy

  1. Formation and crystallization kinetics of Nd-Fe-B-based bulk amorphous alloy

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Qiong; Ge, Hongliang; Zhang, Pengyue; Li, Dongyun; Wang, Zisheng [China Jiliang University, Magnetism Key Laboratory of Zhejiang Province, Hangzhou (China)

    2014-06-15

    In order to improve the glass-forming ability (GFA) of Nd-Fe-B ternary alloys to obtain fully amorphous bulk Nd-Fe-B-based alloy, the effects of Mo and Y doping on GFA of the alloys were investigated. It was found that the substitution of Mo for Fe and Y for Nd enhanced the GFA of the Nd-Y-Fe-Mo-B alloys. It was also revealed that the GFA of the samples was optimized by 4 at.% Mo doping and increased with theYcontent. The fully amorphous structures were all formed in the Nd{sub 6-x}Y{sub x}Fe{sub 68}Mo{sub 4}B{sub 22} (x =1-5) alloy rods with 1.5 mm-diameter. After subsequent crystallization, the devitrified Nd{sub 3}Y{sub 3}Fe{sub 68}Mo{sub 4}B{sub 22} alloy rod exhibited a uniform distribution of grains with a coercivity of 364.1 kA/m. The crystallization behavior of Nd{sub 3}Y{sub 3}Fe{sub 68}Mo{sub 4}B{sub 22} BMG was investigated in isothermal situation. The Avrami exponent n determined by JAM plot is lower than 2.5, implying that the crystallization is mainly governed by a growth of particles with decreasing nucleation rate. (orig.)

  2. Alloying process of sputter-deposited Ti/Ni multilayer thin films

    International Nuclear Information System (INIS)

    Cho, H.; Kim, H.Y.; Miyazaki, S.

    2006-01-01

    Alloying process of a Ti/Ni multilayer thin film was investigated in detail by differential scanning calorimetry (DSC), X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The Ti/Ni multilayer thin film was prepared by depositing Ti and Ni layers alternately on a SiO 2 /Si substrate. The number of each metal layer was 100, and the total thickness was 3 μm. The alloy composition was determined as Ti-51 at.%Ni by electron probe micro analysis (EPMA). The DSC curve exhibited three exothermic peaks at 621, 680 and 701 K during heating the as-sputtered multilayer thin film. In order to investigate the alloying process, XRD and TEM observation was carried out for the specimens heated up to various temperatures with the heating rate same as the DSC measurement. The XRD profile of the as-sputtered film revealed only diffraction peaks of Ti and Ni. But reaction layers of 3 nm in thickness were observed at the interfaces of Ti and Ni layers in cross-sectional TEM images. The reaction layer was confirmed as an amorphous phase by the nano beam diffraction analysis. The XRD profiles exhibited that the intensity of Ti diffraction peak decreased in the specimen heat-treated above 600 K. The peak from Ni became broad and shifted to lower diffraction angle. The amorphous layer thickened up to 6 nm in the specimen heated up to 640 K. The diffraction peak corresponding to Ti-Ni B2 phase appeared and the peak from Ni disappeared for the specimen heated up to 675 K. The Ti-Ni B2 crystallized from the amorphous reaction layer. After further heating above the third exothermic peak, the intensity of the peak from the Ti-Ni B2 phase increased, the peak from Ti disappeared and the peaks corresponding to Ti 2 Ni appeared. The Ti 2 Ni phase was formed by the reaction of the Ti-Ni B2 and Ti

  3. Wetting behavior of molten In-Sn alloy on bulk amorphous and crystalline Cu40Zr44Al8Ag8

    International Nuclear Information System (INIS)

    Ma, G. F.; Zhang, H. F.; Li, H.; Hu, Z. Q.

    2007-01-01

    Using the sessile-drop method, the wettability of the molten In-Sn alloy on bulk amorphous and crystalline Cu 40 Zr 44 Al 8 Ag 8 alloy was studied at different temperatures. It was found that the equilibrium contact angle of In-Sn alloy melt on bulk amorphous substrate was smaller than that of the crystalline one. An intermetallic compound existed at the interface of In-Sn alloy on amorphous Cu 40 Zr 44 Al 8 Ag 8 , while no intermediate reaction layer was formed at the interface of In-Sn alloy on crystalline Cu 40 Zr 44 Al 8 Ag 8 in the temperature range studied

  4. Hyperfine interactions and some thermomagnetic properties of amorphous FeZr(CrNbBCu alloys

    Directory of Open Access Journals (Sweden)

    Łukiewska Agnieszka

    2017-06-01

    Full Text Available In this research, we studied the magnetic phase transition by Mössbauer spectroscopy and using vibrating sample magnetometer for amorphous Fe86-xZr7CrxNb2Cu1B4 (x = 0 or 6 alloys in the as-quenched state and after accumulative annealing in the temperature range 600-750 K. The Mössbauer investigations were carried out at room and nitrogen temperatures. The Mössbauer spectra of the investigated alloys at room temperature are characteristic of amorphous paramagnets and have a form of asymmetric doublets. However, at nitrogen temperature, the alloys behave like ferromagnetic amorphous materials. The two components are distinguished in the spectrum recorded at both room and nitrogen temperatures. The low field component in the distribution of hyperfine field induction shifts towards higher field with the annealing temperature. It is assumed that during annealing at higher temperature, due to diffusion processes, the grains of α-Fe are created in the area corresponding to this component. Both investigated alloys show the invar effect and the decrease of hyperfine field induction after annealing at 600 K for 10 min is observed. It is accompanied by the lowering of Curie temperature.

  5. Study of Sn100-xMnx amorphous system by 119Sn Moessbauer spectroscopy

    International Nuclear Information System (INIS)

    Drago, V.

    1986-01-01

    Thin films of Sn 100-x Mn x amorphous alloys with large range of concentrations were procedure by vapor condensation technique on substrates at temperatures near to liquid helium. The magnetic and paramagnetic hyperfine spectra, and the ordering temperatures were measured by 119 Sn Moessbauer effect. The electrical resistivity was used for characterizing the amorphous state. All the measurements were done 'in situ'. A magnetic phase diagram is proposed. (M.C.K.) [pt

  6. Comparison of stress in single and multiple layer depositions of plasma-deposited amorphous silicon dioxide

    International Nuclear Information System (INIS)

    Au, V; Charles, C; Boswell, R W

    2006-01-01

    The stress in a single-layer continuous deposition of amorphous silicon dioxide (SiO 2 ) film is compared with the stress within multiple-layer intermittent or 'stop-start' depositions. The films were deposited by helicon activated reactive evaporation (plasma assisted deposition with electron beam evaporation source) to a 1 μm total film thickness. The relationships for stress as a function of film thickness for single, two, four and eight layer depositions have been obtained by employing the substrate curvature technique on a post-deposition etch-back of the SiO 2 film. At film thicknesses of less than 300 nm, the stress-thickness relationships clearly show an increase in stress in the multiple-layer samples compared with the relationship for the single-layer film. By comparison, there is little variation in the film stress between the samples when it is measured at 1 μm film thickness. Localized variations in stress were not observed in the regions where the 'stop-start' depositions occurred. The experimental results are interpreted as a possible indication of the presence of unstable, strained Si-O-Si bonds in the amorphous SiO 2 film. It is proposed that the subsequent introduction of a 'stop-start' deposition process places additional strain on these bonds to affect the film structure. The experimental stress-thickness relationships were reproduced independently by assuming a linear relationship between the measured bow and film thickness. The constants of the linear model are interpreted as an indication of the density of the amorphous film structure

  7. Effect of structure and deposition technology on tribological properties of DLC coatings alloyed with VIA group metals

    Science.gov (United States)

    Khrushchov, M.; Levin, I.; Marchenko, E.; Avdyukhina, V.; Petrzhik, M.

    2016-07-01

    The results of a comprehensive research on atomic structure, phase composition, micromechanical and tribological characteristics of alloyed DLC coatings have been presented. The coatings have been deposited by reactive magnetron sputtering in acetylene-nitrogen gas mixtures of different compositions (a-C:H:Cr), by plasma-assisted chemical vapor deposition in atmospheres of silicone-organic precursor gases (a-C:H:Mo:Si), and by nonreactive magnetron sputtering of a composite target (a-C:H:W).

  8. Structural investigation of Fe(Cu)ZrB amorphous alloy

    Energy Technology Data Exchange (ETDEWEB)

    Duhaj, P. [Slovenska Akademia Vied, Bratislava (Slovakia). Fyzikalny Ustav; Matko, I. [Slovenska Akademia Vied, Bratislava (Slovakia). Fyzikalny Ustav; Svec, P. [Slovenska Akademia Vied, Bratislava (Slovakia). Fyzikalny Ustav; Sitek, J. [Department of Nuclear Physics and Technology, Slovak Technical University, 81219 Bratislava (Slovakia); Janickovic, D. [Slovenska Akademia Vied, Bratislava (Slovakia). Fyzikalny Ustav

    1996-07-01

    The crystallization process in Fe{sub 86}(Cu{sub 1})Zr{sub 7}B{sub 6} and Fe{sub 87}Zr{sub 7}B{sub 6} is investigated using the methods of transmission electron microscopy, electron and X-ray diffraction and resistometry. Two crystallization reactions take place during thermal annealing of amorphous Fe{sub 86}(Cu{sub 1})Zr{sub 7}B{sub 6} and Fe{sub 87}Zr{sub 7}B{sub 6} alloys. In both alloys the first crystallization begins with the formation of nanocrystalline {alpha}-Fe at temperature to approximately 800 K. The second crystallization starts above 1000 K; the nanocrystalline phase dissolves and together with the remaining amorphous matrix form rough grains of {alpha}-Fe and dispersed Fe{sub 23}Zr{sub 6} phases. From Moessbauer spectroscopy it seems that there exist two neighbourhoods of Fe atoms in the amorphous structure. One of them is characterized by low Zr content and is responsible for the high-field component of the hyperfine field distribution p(H). The second one is rich in Zr and B and is responsible for the low-field component of p(H). This is in accord with the observation of two crystallization steps separated by a large interval of temperatures due to the existence of two chemically different regions or clusters. (orig.)

  9. Suppressed beta relaxations and reduced heat capacity in ultrastable organic glasses prepared by physical vapor deposition

    Science.gov (United States)

    Ediger, Mark

    Glasses play an important role in technology as a result of their macroscopic homogeneity (e.g., the clarity of window glass) and our ability to tune properties through composition changes. A problem with liquid-cooled glasses is that they exhibit marginal kinetic stability and slowly evolve towards lower energy glasses and crystalline states. In contrast, we have shown that physical vapor deposition can prepare glasses with very high kinetic stability. These materials have properties expected for ``million-year-old'' glasses, including high density, low enthalpy, and high mechanical moduli. We have used nanocalorimetry to show that these high stability glasses have lower heat capacities than liquid-cooled glasses for a number of molecular systems. Dielectric relaxation has been used to show that the beta relaxation can be suppressed by nearly a factor of four in vapor-deposited toluene glasses, indicating a very tight packing environment. Consistent with this view, computer simulations of high stability glasses indicate reduced Debye-Waller factors. These high stability materials raise interesting questions about the limiting properties of amorphous packing arrangements.

  10. Tandem solar cells deposited using hot-wire chemical vapor deposition

    NARCIS (Netherlands)

    Veen, M.K. van

    2003-01-01

    In this thesis, the application of the hot-wire chemical vapor deposition (HWCVD) technique for the deposition of silicon thin films is described. The HWCVD technique is based on the dissociation of silicon-containing gasses at the catalytic surface of a hot filament. Advantages of this technique

  11. Moessbauer study of isothermally annealed amorphous Fe-Nb-Cu-Si-B alloys

    Energy Technology Data Exchange (ETDEWEB)

    Sitek, J. (Dept. of Nuclear Physics and Technology, Slovak Technical Univ., Bratislava (Slovakia)); Toth, I. (Dept. of Nuclear Physics and Technology, Slovak Technical Univ., Bratislava (Slovakia)); Miglierini, M. (Dept. of Nuclear Physics and Technology, Slovak Technical Univ., Bratislava (Slovakia))

    1993-11-01

    Amorphous ribbons of Fe[sub 73.5]Nb[sub 3]Cu[sub 1]Si[sub 13.5]B[sub 9] have been annealed above the crystallization temperature. Annealed samples consisted of crystalline and amorphous phases in a wide temperature range. Two samples of different thicknesses of 33 [mu]m and 27 [mu]m were isothermally annealed at a temperature of 545 C from 0.5 to 5 h in a vacuum furnace. The amount of crystalline phase increases rapidly in the ticker sample. The crystalline part of the Moessbauer spectrum consists of four sharp sextets which can be assigned to a DO[sub 3]-structure FeSi alloy. After 700 C annealing the amorphous phase was not observed and the crystalline phase consisted of the DO[sub 3]-structure FeSi alloy, paramagnetic FeNbB and presumably Fe[sub 23]B[sub 6] and Fe[sub 3]SiB[sub 2]. (orig.)

  12. Achieving uniform layer deposition by atmospheric-pressure plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jae-Ok [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Kang, Woo Seok, E-mail: kang@kimm.re.kr [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Department of Environment & Energy Mechanical Engineering, University of Science & Technology (UST), Daejeon 305-350 (Korea, Republic of); Hur, Min; Lee, Jin Young [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Song, Young-Hoon [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Department of Environment & Energy Mechanical Engineering, University of Science & Technology (UST), Daejeon 305-350 (Korea, Republic of)

    2015-12-31

    This work investigates the use of plasma-enhanced chemical vapor deposition under atmospheric pressure for achieving uniform layer formation. Electrical and optical measurements demonstrated that the counterbalance between oxygen and precursors maintained the homogeneous discharge mode, while creating intermediate species for layer deposition. Several steps of the deposition process of the layers, which were processed on a stationary stage, were affected by flow stream and precursor depletion. This study showed that by changing the flow streamlines using substrate stage motion uniform layer deposition under atmospheric pressure can be achieved. - Highlights: • Zirconium oxide was deposited by atmospheric-pressure plasma-enhanced chemical vapor deposition. • Homogeneous plasma was maintained by counterbalancing between discharge gas and precursors. • Several deposition steps were observed affected by the gas flow stream and precursor depletion. • Thin film layer was uniformly grown when the substrate underwent a sweeping motion.

  13. Characterization of Fe-based alloy coating deposited by supersonic plasma spraying

    International Nuclear Information System (INIS)

    Piao, Zhong-yu; Xu, Bin-shi; Wang, Hai-dou; Wen, Dong-hui

    2013-01-01

    Highlights: • Fe-based coating exhibited few oxides, high density and bond strength. • Amorphous/nanocrystalline phases were found in the coating. • Formation mechanism of excellent coating was investigated. -- Abstract: The objective of the present study is to characterize the Fe-based alloy coating deposited by the supersonic plasma spraying process. The condition of the melting particles was in situ monitored. The microstructure of the coating was examined by scanning electron microscope and high resolution transmission electron microscope. The phase composition was examined by X-ray diffraction. The microhardness and porosity were also measured, respectively. Results show the prepared coatings have excellent properties, such as few oxides, high microhardness and a low porosity amount. At the same time, a mass of amorphous/nanocrystalline phases was found in the coating. The mechanism of the formation of amorphous/nanocrystalline phases was investigated. The appropriate material composition of spraying material and flash set process of plasma spraying are the key factors. Moreover, the mechanism for oxidation resistance is also investigated, where the separation between melting metal and oxygen by the formation of SiO 2 films is the key factor

  14. Influence of Weak External Magnetic Field on Amorphous and Nanocrystalline Fe-based Alloys

    Science.gov (United States)

    Degmová, J.; Sitek, J.

    2010-07-01

    Nanoperm, Hitperm and Finamet amorphous and nanocrystalline alloys were measured by Mössbauer spectrometry in a weak external magnetic field of 0.5 T. It was shown that the most sensitive parameters of Mössbauer spectra are the intensities of the 2nd and the 5th lines. Rather small changes were observed also in the case of internal magnetic field values. The spectrum of nanocrystalline Nanoperm showed the increase in A23 parameter (ratio of line intensities) from 2.4 to 3.7 and decrease of internal magnetic field from 20 to 19 T for amorphous subspectrum under the influence of magnetic field. Spectrum of nanocrystalline Finemet shown decrease in A23 parameter from 3.5 to 2.6 almost without a change in the internal magnetic field value. In the case of amorphous Nanoperm and Finemet samples, the changes are almost negligible. Hitperm alloy showed the highest sensitivity to the weak magnetic field, when the A23 parameter increased from 0.4 to 2.5 in the external magnetic fields. The A23 parameter of crystalline subspectrum increased from 2.7 to 3.8 and the value of internal magnetic field corresponding to amorphous subspectrum increased from 22 to 24 T. The behavior of nanocrystalline alloys under weak external magnetic field was analyzed within the three-level relaxation model of magnetic dynamics in an assembly of single-domain particles.

  15. Corrosion-resistant amorphous alloy ribbons for electromagnetic filtration of iron rusts from water

    International Nuclear Information System (INIS)

    Kawashima, Asahi; Asami, Katsuhiko; Sato, Takeaki; Hashimoto, Koji

    1985-01-01

    An attempt was made to use corrosion-resistant amorphous Fe-9Cr-13P-7C alloy ribbons as an electromagnetic filter material for trapping various iron rusts suspended in water at 40 0 C. The ferrimagnetic Fe 3 O 4 rust was trapped with the 100 % efficiency and paramagnetic rusts such as α-Fe 2 O 3 , α-FeOOH and amorphous ferric oxyhydroxide were trapped with certain efficiencies at the magnetic field strength of 0.5-10 kOe. The regeneration of the filter by back-washing was easy. The trapping capacity of electromagnetic filter was proportional to the edge length of the filter material where the high magnetic field strength existed. Therefore, melt-spun thin and narrow amorphous alloy ribbons having the high corrosion resistance have the potential utility as electromagnetic filter material. (author)

  16. Effect of Co content on structure and magnetic behaviors of high induction Fe-based amorphous alloys

    Energy Technology Data Exchange (ETDEWEB)

    Roy, Rajat K., E-mail: rajat@nmlindia.org; Panda, Ashis K.; Mitra, Amitava

    2016-11-15

    The replacement of Fe with Co is investigated in the (Fe{sub 1−x}Co{sub x}){sub 79}Si{sub 8.5}B{sub 8.5}Nb{sub 3}Cu{sub 1} (x=0, 0.05, 0.2, 0.35, 0.5) amorphous alloys. The alloys are synthesized in the forms of ribbons by single roller melt spinning technique, and the structural and magnetic properties of annealed ribbons are characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and vibrating sample magnetometer (VSM), B–H curve tracer, respectively. All as-cast alloys are structurally amorphous, however, their magnetic properties are varying with Co addition. The Co addition within 5–20 at% results in moderate thermal stability, saturation induction, Curie temperature and lowest coercivity, while 35 at% Co causes highest saturation induction, coercivity, Curie temperature and lowest thermal stability. On devitrification, the magnetic properties change with the generation of α-FeCo nanocrystallites and (FeCo){sub 23}B{sub 6}, Fe{sub 2}B phases during primary and secondary crystallization stages, respectively. A small amount Co is advantageous for maintaining finer nanocrystallites in amorphous matrix even after annealing at 600 °C, leading to high saturation magnetization (>1.5 T) and low coercivity (~35 A/m). The improved magnetic properties at elevated temperatures indicate these alloys have a potential for high frequency transformer core applications. - Highlights: • The structural and magnetic behaviors of Fe based amorphous alloys have been investigated with the effect of Co content. • The Co has no adverse effect on amorphization of alloys. • A small amount Co causes the superior improvement of magnetic properties at elevated temperatures. • Therefore, it is important not only for academic research but also for industrial applied research.

  17. Structure and gas-barrier properties of amorphous hydrogenated carbon films deposited on inner walls of cylindrical polyethylene terephthalate by plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Li Jing; Gong Chunzhi; Tian Xiubo; Yang Shiqin; Fu, Ricky K.Y.; Chu, Paul K.

    2009-01-01

    The influence of radio-frequency (RF) power on the structure and gas permeation through amorphous hydrogenated carbon films deposited on cylindrical polyethylene terephthalate (PET) samples is investigated. The results show that a higher radio-frequency power leads to a smaller sp 3 /sp 2 value but produces fewer defects with smaller size. The permeability of PET samples decreases significantly after a-C:H deposition and the RF only exerts a small influence. However, the coating uniformity, color, and wettability of the surface are affected by the RF power. A higher RF power results in to better uniformity and it may be attributed to the combination of the high-density plasma and sample heating.

  18. Amorphous phase formation in intermetallic Mg2Ni alloy synthesized by ethanol wet milling

    International Nuclear Information System (INIS)

    Wang, H.-W.; Chyou, S.-D.; Wang, S.-H.; Yang, M.-W.; Hsu, C.-Y.; Tien, H.-C.; Huang, N.-N.

    2009-01-01

    The hydriding/dehydriding properties of an intermetallic Mg 2 Ni alloy synthesized by wet ball milling in ethanol have been investigated. The appearance of the particle surface after different milling methods is one obvious difference. The alloyed powders prepared by either dry milling or wet milling under ethanol were characterized for phase content by X-ray diffractometer (XRD). The results show that two broad diffuse peaks, which are an ionic-organic-Mg amorphous material, appear in addition to the nickel element peaks. This unexpected amorphous phase has the special hydrogen absorbing/desorbing features.

  19. Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11%

    Energy Technology Data Exchange (ETDEWEB)

    Hart, John; Hazbun, Ramsey; Gupta, Jay; Kolodzey, James [Department of Electrical Engineering, University of Delaware, 140 Evans Hall, Newark, Delaware 19716 (United States); Adam, Thomas [College of Nanoscale Science and Engineering, SUNY, Albany, New York 12203 (United States); Kim, Yihwan; Huang, Yi-Chiau [Applied Materials, Sunnyvale, California 94085 (United States); Reznicek, Alexander [IBM Research at Albany Nanotech, Albany, New York 12203 (United States)

    2016-03-07

    Pseudomorphic GeSn layers with Sn atomic percentages between 4.5% and 11.3% were grown by chemical vapor deposition using digermane and SnCl{sub 4} precursors on Ge virtual substrates grown on Si. The layers were characterized by x-ray diffraction rocking curves and reciprocal space maps. Photoconductive devices were fabricated, and the dark current was found to increase with Sn concentration. The responsivity of the photoconductors was measured at a wavelength of 1.55 μm using calibrated laser illumination at room temperature and a maximum value of 2.7 mA/W was measured for a 4.5% Sn device. Moreover, the responsivity for higher Sn concentration was found to increase with decreasing temperature. Spectral photoconductivity was measured using Fourier transform infrared spectroscopy. The photoconductive absorption edge continually increased in wavelength with increasing tin percentage, out to approximately 2.4 μm for an 11.3% Sn device. The direct band gap was extracted using Tauc plots and was fit to a bandgap model accounting for layer strain and Sn concentration. This direct bandgap was attributed to absorption from the heavy-hole band to the conduction band. Higher energy absorption was also observed, which was thought to be likely from absorption in the light-hole band. The band gaps for these alloys were plotted as a function of temperature. These experiments show the promise of GeSn alloys for CMOS compatible short wave infrared detectors.

  20. Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11%

    International Nuclear Information System (INIS)

    Hart, John; Hazbun, Ramsey; Gupta, Jay; Kolodzey, James; Adam, Thomas; Kim, Yihwan; Huang, Yi-Chiau; Reznicek, Alexander

    2016-01-01

    Pseudomorphic GeSn layers with Sn atomic percentages between 4.5% and 11.3% were grown by chemical vapor deposition using digermane and SnCl 4 precursors on Ge virtual substrates grown on Si. The layers were characterized by x-ray diffraction rocking curves and reciprocal space maps. Photoconductive devices were fabricated, and the dark current was found to increase with Sn concentration. The responsivity of the photoconductors was measured at a wavelength of 1.55 μm using calibrated laser illumination at room temperature and a maximum value of 2.7 mA/W was measured for a 4.5% Sn device. Moreover, the responsivity for higher Sn concentration was found to increase with decreasing temperature. Spectral photoconductivity was measured using Fourier transform infrared spectroscopy. The photoconductive absorption edge continually increased in wavelength with increasing tin percentage, out to approximately 2.4 μm for an 11.3% Sn device. The direct band gap was extracted using Tauc plots and was fit to a bandgap model accounting for layer strain and Sn concentration. This direct bandgap was attributed to absorption from the heavy-hole band to the conduction band. Higher energy absorption was also observed, which was thought to be likely from absorption in the light-hole band. The band gaps for these alloys were plotted as a function of temperature. These experiments show the promise of GeSn alloys for CMOS compatible short wave infrared detectors.

  1. Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11%

    Science.gov (United States)

    Hart, John; Adam, Thomas; Kim, Yihwan; Huang, Yi-Chiau; Reznicek, Alexander; Hazbun, Ramsey; Gupta, Jay; Kolodzey, James

    2016-03-01

    Pseudomorphic GeSn layers with Sn atomic percentages between 4.5% and 11.3% were grown by chemical vapor deposition using digermane and SnCl4 precursors on Ge virtual substrates grown on Si. The layers were characterized by x-ray diffraction rocking curves and reciprocal space maps. Photoconductive devices were fabricated, and the dark current was found to increase with Sn concentration. The responsivity of the photoconductors was measured at a wavelength of 1.55 μm using calibrated laser illumination at room temperature and a maximum value of 2.7 mA/W was measured for a 4.5% Sn device. Moreover, the responsivity for higher Sn concentration was found to increase with decreasing temperature. Spectral photoconductivity was measured using Fourier transform infrared spectroscopy. The photoconductive absorption edge continually increased in wavelength with increasing tin percentage, out to approximately 2.4 μm for an 11.3% Sn device. The direct band gap was extracted using Tauc plots and was fit to a bandgap model accounting for layer strain and Sn concentration. This direct bandgap was attributed to absorption from the heavy-hole band to the conduction band. Higher energy absorption was also observed, which was thought to be likely from absorption in the light-hole band. The band gaps for these alloys were plotted as a function of temperature. These experiments show the promise of GeSn alloys for CMOS compatible short wave infrared detectors.

  2. The effect of carrier gas flow rate and source cell temperature on low pressure organic vapor phase deposition simulation by direct simulation Monte Carlo method

    Science.gov (United States)

    Wada, Takao; Ueda, Noriaki

    2013-01-01

    The process of low pressure organic vapor phase deposition (LP-OVPD) controls the growth of amorphous organic thin films, where the source gases (Alq3 molecule, etc.) are introduced into a hot wall reactor via an injection barrel using an inert carrier gas (N2 molecule). It is possible to control well the following substrate properties such as dopant concentration, deposition rate, and thickness uniformity of the thin film. In this paper, we present LP-OVPD simulation results using direct simulation Monte Carlo-Neutrals (Particle-PLUS neutral module) which is commercial software adopting direct simulation Monte Carlo method. By estimating properly the evaporation rate with experimental vaporization enthalpies, the calculated deposition rates on the substrate agree well with the experimental results that depend on carrier gas flow rate and source cell temperature. PMID:23674843

  3. The effect of carrier gas flow rate and source cell temperature on low pressure organic vapor phase deposition simulation by direct simulation Monte Carlo method

    Science.gov (United States)

    Wada, Takao; Ueda, Noriaki

    2013-04-01

    The process of low pressure organic vapor phase deposition (LP-OVPD) controls the growth of amorphous organic thin films, where the source gases (Alq3 molecule, etc.) are introduced into a hot wall reactor via an injection barrel using an inert carrier gas (N2 molecule). It is possible to control well the following substrate properties such as dopant concentration, deposition rate, and thickness uniformity of the thin film. In this paper, we present LP-OVPD simulation results using direct simulation Monte Carlo-Neutrals (Particle-PLUS neutral module) which is commercial software adopting direct simulation Monte Carlo method. By estimating properly the evaporation rate with experimental vaporization enthalpies, the calculated deposition rates on the substrate agree well with the experimental results that depend on carrier gas flow rate and source cell temperature.

  4. In vitro metal ion release and biocompatibility of amorphous Mg67Zn28Ca5 alloy with/without gelatin coating

    International Nuclear Information System (INIS)

    Chan, W.Y.; Chian, K.S.; Tan, M.J.

    2013-01-01

    Amorphous zinc-rich Mg–Zn–Ca alloys have exhibited good tissue compatibility and low hydrogen evolution in vivo. However, suboptimal cell–surface interaction on magnesium alloy surface observed in vitro could lead to reduced integration with host tissue for regenerative purpose. This study aims to improve cell–surface interaction of amorphous Mg 67 Zn 28 Ca 5 alloy by coating a gelatin layer by electrospinning. Coated/uncoated alloys were immersed and extracted for 3 days under different CO 2 . The immersion results showed that pH and metal ion release in the alloy extracts were affected by gelatin coating and CO 2 , suggesting their roles in alloy biocorrosion and a mechanism has been proposed for the alloy–CO 2 system with/without coating. Cytotoxicity results are evident that gelatin-coated alloy with 2-day crosslinking not only exhibited no indirect cytotoxicity, but also supported attachment of L929 and MG63 cell lines around/on the alloy with high viability. Therefore, amorphous Mg 67 Zn 28 Ca 5 alloy coated with gelatin by electrospinning technique provides a useful method to improve alloy biocompatibility. - Highlights: • Electrospinning is a new method to coat amorphous Mg 67 Zn 28 Ca 5 alloy with gelatin. • Gelatin-coated alloy has differential effect on pH and ion release at various CO 2 . • L929 cell proliferation correlates with Mg 2+ level in alloy extracts. • Biomimetic gelatin coating significantly improves cell–surface interaction

  5. Room-Temperature-Synthesized High-Mobility Transparent Amorphous CdO-Ga2O3 Alloys with Widely Tunable Electronic Bands.

    Science.gov (United States)

    Liu, Chao Ping; Ho, Chun Yuen; Dos Reis, Roberto; Foo, Yishu; Guo, Peng Fei; Zapien, Juan Antonio; Walukiewicz, Wladek; Yu, Kin Man

    2018-02-28

    In this work, we have synthesized Cd 1-x Ga x O 1+δ alloy thin films at room temperature over the entire composition range by radio frequency magnetron sputtering. We found that alloy films with high Ga contents of x > 0.3 are amorphous. Amorphous Cd 1-x Ga x O 1+δ alloys in the composition range of 0.3 < x < 0.5 exhibit a high electron mobility of 10-20 cm 2 V -1 s -1 with a resistivity in the range of 10 -2 to high 10 -4 Ω cm range. The resistivity of the amorphous alloys can also be controlled over 5 orders of magnitude from 7 × 10 -4 to 77 Ω cm by controlling the oxygen stoichiometry. Over the entire composition range, these crystalline and amorphous alloys have a large tunable intrinsic band gap range of 2.2-4.8 eV as well as a conduction band minimum range of 5.8-4.5 eV below the vacuum level. Our results suggest that amorphous Cd 1-x Ga x O 1+δ alloy films with 0.3 < x < 0.4 have favorable optoelectronic properties as transparent conductors on flexible and/or organic substrates, whereas the band edges and electrical conductivity of films with 0.3 < x < 0.7 can be manipulated for transparent thin-film transistors as well as electron transport layers.

  6. Effect of crystallization rate of initial alloy on magnetic properties of amorphous tape

    International Nuclear Information System (INIS)

    Roshchin, V.E.; Gribanov, V.P.; Shcherbakov, D.G.; Gun'kin, V.E.

    1994-01-01

    An investigation is made into mechanism and character of cooling rate effect when castings crytallizing on magnetic properties of rapidly quenched amorphous tape of Fe 78 B 12 Si 9 Ni 1 alloy. The increase of cooling rate and holding at heat for superheated melt is shown to result in a rise of Curie point of amorphous tape

  7. Ti-doped hydrogenated diamond like carbon coating deposited by hybrid physical vapor deposition and plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Lee, Na Rae; Sle Jun, Yee; Moon, Kyoung Il; Sunyong Lee, Caroline

    2017-03-01

    Diamond-like carbon films containing titanium and hydrogen (Ti-doped DLC:H) were synthesized using a hybrid technique based on physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD). The film was deposited under a mixture of argon (Ar) and acetylene gas (C2H2). The amount of Ti in the Ti-doped DLC:H film was controlled by varying the DC power of the Ti sputtering target ranging from 0 to 240 W. The composition, microstructure, mechanical and chemical properties of Ti-doped DLC:H films with varying Ti concentrations, were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nano indentation, a ball-on-disk tribometer, a four-point probe system and dynamic anodic testing. As a result, the optimum composition of Ti in Ti-doped DLC:H film using our hybrid method was found to be a Ti content of 18 at. %, having superior electrical conductivity and high corrosion resistance, suitable for bipolar plates. Its hardness value was measured to be 25.6 GPa with a low friction factor.

  8. Hydrothermal crystallization of amorphous titania films deposited using low temperature atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, D.R.G. [Institute of Materials Engineering, ANSTO, PMB 1, Menai, NSW 2234 (Australia)], E-mail: drm@ansto.gov.au; Triani, G.; Zhang, Z. [Institute of Materials Engineering, ANSTO, PMB 1, Menai, NSW 2234 (Australia)

    2008-10-01

    A two stage process (atomic layer deposition, followed by hydrothermal treatment) for producing crystalline titania thin films at temperatures compatible with polymeric substrates (< 130 deg. C) has been assessed. Titania thin films were deposited at 80 deg. C using atomic layer deposition. They were extremely flat, uniform and almost entirely amorphous. They also contained relatively high levels of residual Cl from the precursor. After hydrothermal treatment at 120 deg. C for 1 day, > 50% of the film had crystallized. Crystallization was complete after 10 days of hydrothermal treatment. Crystallization of the film resulted in the formation of coarse grained anatase. Residual Cl was completely expelled from the film upon crystallization. As a result of the amorphous to crystalline transformation voids formed at the crystallization front. Inward and lateral crystal growth resulted in voids being localized to the film/substrate interface and crystallite perimeters resulting in pinholing. Both these phenomena resulted in films with poor adhesion and film integrity was severely compromised.

  9. High-Efficiency Amorphous Silicon Alloy Based Solar Cells and Modules; Final Technical Progress Report, 30 May 2002--31 May 2005

    Energy Technology Data Exchange (ETDEWEB)

    Guha, S.; Yang, J.

    2005-10-01

    The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high reliability. Our strategy has been to use the spectrum-splitting triple-junction structure, a-Si:H/a-SiGe:H/a-SiGe:H, to improve solar cell and module efficiency, stability, and throughput of production. The methodology used to achieve the objectives included: (1) explore the highest stable efficiency using the triple-junction structure deposited using RF glow discharge at a low rate, (2) fabricate the devices at a high deposition rate for high throughput and low cost, and (3) develop an optimized recipe using the R&D batch large-area reactor to help the design and optimization of the roll-to-roll production machines. For short-term goals, we have worked on the improvement of a-Si:H and a-SiGe:H alloy solar cells. a-Si:H and a-SiGe:H are the foundation of current a-Si:H based thin-film photovoltaic technology. Any improvement in cell efficiency, throughput, and cost reduction will immediately improve operation efficiency of our manufacturing plant, allowing us to further expand our production capacity.

  10. Diffusion studies in amorphous NiZr alloys

    International Nuclear Information System (INIS)

    Hahn, H.; Averback, R.S.; Hoshino, K.; Rothman, S.J.

    1987-06-01

    Tracer impurity and self diffusion measurements have been made on amorphous (a-) NiZr alloys using radioactive tracer, Secondary Ion Mass Spectrometry and Rutherford backscattering techniques. The temperature dependence of diffusion in a-NiZr can be represented in the form D = D 0 exp(-Q/kT), with no structural relaxation effects being observed. The mobility of an atom in a-NiZr increased dramatically with decreasing atomic radius of the diffusing atom and also with decreasing Ni content for Ni concentrations below ≅40 at. %. These diffusion characteristics in a-NiZr are remarkably similar to those in α-Zr and α-Ti. These mechanisms assume that Zr and Ti provide a close packed structure, either crystalline or amorphous, through which small atoms diffuse by an interstitial mechanism and large atoms diffuse by a vacancy mechanism. 12 refs., 2 figs., 2 tabs

  11. Control of microstructure in soldered, brazed, welded, plated, cast or vapor deposited manufactured components

    Science.gov (United States)

    Ripley, Edward B.; Hallman, Russell L.

    2015-11-10

    Disclosed are methods and systems for controlling of the microstructures of a soldered, brazed, welded, plated, cast, or vapor deposited manufactured component. The systems typically use relatively weak magnetic fields of either constant or varying flux to affect material properties within a manufactured component, typically without modifying the alloy, or changing the chemical composition of materials or altering the time, temperature, or transformation parameters of a manufacturing process. Such systems and processes may be used with components consisting of only materials that are conventionally characterized as be uninfluenced by magnetic forces.

  12. The influence of structural changes on electrical and magnetic characteristics of amorphous powder of the nixmoy alloy

    Directory of Open Access Journals (Sweden)

    Ribić-Zelenović Lenka

    2006-01-01

    Full Text Available Nickel and molybdenum alloy powder was electrodeposited on a titanium cathode from a NiSO4⋅7H2O and (NH46 Mo7O24⋅4H2O ammonium solution. The desired chemical composition, structure, size and shape of particles in the powder samples were achieved by an appropriate choice of electrolysis parameters (current density, composition and temperature of the solution, cathode material and electrolysis duration. Metal coatings form in the current density range 15 mA cm-2alloy decreases with the increase of the current density of deposition. Smaller sized particles form at higher current density. X-ray analysis, differential scanning calorimetric and measurements of the temperature dependence of electric resistance and magnetic permeability of the powder samples were all used to establish a predominantly amorphous structure of the powder samples formed at the current density of j≥70mA cm-2. The crystalline particle content in the powder samples increases with the decrease of the current density of deposition. Powder heating causes structural changes. The process of thermal stabilization of nickel and molybdenum amorphous powders takes place in the temperature interval from 463K to 573K and causes a decrease in electrical resistance and increase in magnetic permeability. The crystallization temperature depends on the value of current density of powder electrodeposition. Powder formed at j=180 mA cm-2 begins to crystallize at 573K, while the powder deposited at j=50 mA cm-2 begins to crystallize at 673K. Crystallization of the powder causes a decrease in electric resistivity and magnetic

  13. Application of Chlorine-Assisted Chemical Vapor Deposition of Diamond at Low Temperatures

    Science.gov (United States)

    Pan, Chenyu; Altemir, David A.; Margrave, John L.; Hauge, Robert H.

    1994-01-01

    Low temperature deposition of diamond has been achieved by a chlorine-assisted diamond chemical vapor deposition (CA-CVD) process. This method begins with the thermal dissociation of molecular chlorine into atomic chlorine in a resistively heated graphite furnace at temperatures between 1300 and 1500 deg. C. The atomic chlorine, upon mixing, subsequently reacts with molecular hydrogen and hydrocarbons. The rapid exchange reactions between the atomic chlorine, molecular hydrogen, and hydrocarbons give rise to the atomic hydrogen and carbon precursors required for diamond deposition. Homoepitaxial diamond growth on diamond substrates has been studied over the substrate temperature range of 100-950 C. It was found that the diamond growth rates are approximately 0.2 microns/hr in the temperature range between 102 and 300 C and that the growth rates do not decrease significantly with a decrease in substrate temperature. This is unique because the traditional diamond deposition using H2/CH4 systems usually disappears at substrate temperatures below approx. 500 deg. C. This opens up a possible route to the deposition of diamond on low-melting point materials such as aluminum and its alloys.

  14. Crystallization Behavior of A Bulk Amorphous Mg62Cu26Y12 Alloy

    Science.gov (United States)

    Wu, Shyue-Sheng; Chin, Tsung-Shune; Su, Kuo-Chang

    1994-07-01

    The crystallization temperature, the associated activation energy and the crystallized structure of a bulk amorphous Mg62Cu26Y12 alloy with a diameter of 2.5 mm were studied. It possesses a one-step crystallization behavior. The crystallization reaction was found to be represented by: AM(MG62Cu26Y12)→Mg2Cu+MgY+CuY+Mg, ( Tx=188°C, Eac=134 kJ/mol) where AM represents the amorphous state, T x the crystallization temperature at an infinitesimal heating rate, and E ac the associated activation energy. The amount of crystalline phases were found to be Mg2Cu:MgY:CuY=76:17:7. The Mg phase is identifiable only by high resolution electron microscopy, not by X-ray diffraction. The crystallization leads to a sharp rise in electrical resistivity which is reversed to those of iron-based amorphous alloys.

  15. Formation of soft magnetic high entropy amorphous alloys composites containing in situ solid solution phase

    Science.gov (United States)

    Wei, Ran; Sun, Huan; Chen, Chen; Tao, Juan; Li, Fushan

    2018-03-01

    Fe-Co-Ni-Si-B high entropy amorphous alloys composites (HEAACs), which containing high entropy solid solution phase in amorphous matrix, show good soft magnetic properties and bending ductility even in optimal annealed state, were successfully developed by melt spinning method. The crystallization phase of the HEAACs is solid solution phase with body centered cubic (BCC) structure instead of brittle intermetallic phase. In addition, the BCC phase can transformed into face centered cubic (FCC) phase with temperature rise. Accordingly, Fe-Co-Ni-Si-B high entropy alloys (HEAs) with FCC structure and a small amount of BCC phase was prepared by copper mold casting method. The HEAs exhibit high yield strength (about 1200 MPa) and good plastic strain (about 18%). Meanwhile, soft magnetic characteristics of the HEAs are largely reserved from HEAACs. This work provides a new strategy to overcome the annealing induced brittleness of amorphous alloys and design new advanced materials with excellent comprehensive properties.

  16. Anisotropic electrical conduction and reduction in dangling-bond density for polycrystalline Si films prepared by catalytic chemical vapor deposition

    Science.gov (United States)

    Niikura, Chisato; Masuda, Atsushi; Matsumura, Hideki

    1999-07-01

    Polycrystalline Si (poly-Si) films with high crystalline fraction and low dangling-bond density were prepared by catalytic chemical vapor deposition (Cat-CVD), often called hot-wire CVD. Directional anisotropy in electrical conduction, probably due to structural anisotropy, was observed for Cat-CVD poly-Si films. A novel method to separately characterize both crystalline and amorphous phases in poly-Si films using anisotropic electrical conduction was proposed. On the basis of results obtained by the proposed method and electron spin resonance measurements, reduction in dangling-bond density for Cat-CVD poly-Si films was achieved using the condition to make the quality of the included amorphous phase high. The properties of Cat-CVD poly-Si films are found to be promising in solar-cell applications.

  17. High speed cinematography of cracks spreading under failure of amorphous metallic alloys

    International Nuclear Information System (INIS)

    Tabachnikova, E.D.; Golovin, Y.I.; Makarov, M.V.; Shibkov, A.A.

    1997-01-01

    The results of experimental investigation of crack propagation velocity in amorphous alloys are presented. It is shown that there exists some correlation between crack velocity and fracture mode and morphology (orig.)

  18. Magnetic properties of amorphous alloys of Fe with La, Lu, Y, and Zr

    International Nuclear Information System (INIS)

    Heiman, N.; Kazama, N.

    1979-01-01

    In order to study the systematics of the Fe-Fe exchange in amorphous rare-earth--Fe alloys, without the complications associated with the magnetic characteristics of the rare-earth elements, amorphous films of Fe alloyed with La, Lu, Y, and Zr have been prepared with a wide range of Fe concentrations. Magnetization and Moessbauer-effect measurements were made. The magnetic properties of the alloys depended critically on the choice of rare earth (or rare-earth-like element). YFe and LuFe alloys were found to have spin-glass characteristics while LaFe and ZrFe alloys were found to be ferromagnetic, but with evidence that exchange fluctuations were nearly as large as the average exchange. Thus the nature of the Fe-Fe exchange interaction depends critically upon the species of the rare earth. The most important parameter in determining the magnetic behavior of these alloys appears to be the size of the rare-earth atom, with large rare-earth atoms resulting in a smaller ratio of exchange fluctuations to exchange. The same dependence of the magnetic properties upon rare-earth size appears to be important in the case of magnetic-rare-earth atoms; however, the effect of rare-earth--Fe exchange also becomes important and these effects are discussed

  19. Crystallization of an amorphous Fe72Ni9Si8B11 alloy upon laser heating and isothermal annealing

    International Nuclear Information System (INIS)

    Girzhon, V.V.; Smolyakov, A.V.; Yastrebova, T.S.

    2003-01-01

    With the use of methods of x-ray diffraction, resistometric and metallographic analyses specific features of crystallization and phase formation in amorphous alloy Fe 72 Ni 9 Si 8 B 11 are studied under various heating conditions. It is shown that laser heating results in alloy crystallization by an explosive mechanism when attaining a certain density of irradiation power. It is stated that ribbon surface laser heating with simultaneous water cooling of an opposite surface allows manufacturing two-layer amorphous-crystalline structures of the amorphous matrix + α-(Fe, Si) - amorphous matrix type [ru

  20. ELABORATION OF AMORPHOUS METALS AND GLASS TRANSITIONFORMATION AND CHARACTERIZATION OF AMORPHOUS METALS

    OpenAIRE

    Giessen , B.; Whang , S.

    1980-01-01

    This review deals with the definition of amorphous and glassy metals ; the principal methods for their preparation by atom-by-atom deposition, rapid liquid quenching and particle bombardment ; criteria for their formation, especially ready glass formation (RGF) and its alloy chemical foundations ; and their classification. This is followed by a discussion of their elastic and plastic properties (Young's modulus and microhardness) and thermal stability (glass transition and crystallization tem...

  1. Indium oxide-based transparent conductive films deposited by reactive sputtering using alloy targets

    Science.gov (United States)

    Miyazaki, Yusuke; Maruyama, Eri; Jia, Junjun; Machinaga, Hironobu; Shigesato, Yuzo

    2017-04-01

    High-quality transparent conductive oxide (TCO) films, Sn-doped In2O3 (ITO) and In2O3-ZnO (IZO), were successfully deposited on either synthetic silica or polyethylene terephthalate (PET) substrates in the “transition region” by reactive dc magnetron sputtering using In-Zn and In-Sn alloy targets, respectively, with a specially designed plasma emission feedback system. The composition, crystallinity, surface morphology, and electrical and optical properties of the films were analyzed. All of the IZO films were amorphous, whereas the ITO films were polycrystalline over a wide range of deposition conditions. The minimum resistivities of the IZO and ITO films deposited on the heated PET substrates at 150 °C were 3.3 × 10-4 and 5.4 × 10-4 Ω·cm, respectively. By applying rf bias to unheated PET substrates, ITO films with a resistivity of 4.4 × 10-4 Ω·cm were deposited at a dc self-bias voltage of -60 V.

  2. Amorphous-to-crystalline phase transformation by neutron irradiation of the alloy Fe/sub 83/B/sub 17/

    Energy Technology Data Exchange (ETDEWEB)

    Weis, J.; Gabris, F.; Cerven, I.; Sitek, J. (Slovenska Vysoka Skola Technicka, Bratislava (Czechoslovakia))

    1984-03-01

    The purpose of the present work is to investigate the structural changes of amorphous Fe/sub 83/B/sub 17/ alloy after irradiation with fast neutrons ( > 1 MeV) and to compare with the crystallization behaviour of the amorphous Fe/sub 83/B/sub 17/ alloy after annealing. The structural changes were studied by Moessbauer spectroscopy and X-ray diffraction with the usual Fourier analysis.

  3. Synthesis of nanocrystalline Cu1-xTax composites using physical vapor deposition

    International Nuclear Information System (INIS)

    Savage, H.S.; Wang, H.; Rigsbee, J.M.

    1993-01-01

    Physical vapor deposition (PVD) processes provide the capability for creating new types of metallic, ceramic, and polymeric composites by allowing atomic-scale engineering of structure and chemistry. Because PVD processes provide the capacity for circumventing thermodynamic factors, such as solubility limits, it is possible to produce nonequilibrium alloys and materials with unique mixtures of phases. The ease by which PVD produces materials with nanocrystalline microstructures is an added benefit of these processes. This paper describes ion plating, a plasma-assisted PVD process, and its application for the development of a new class of nanoscale dispersion-strengthened Cu 1-x Ta x alloys. Copper-tantalum was selected as a model system because the extensive liquid miscibility gap and nearly zero mutual solid solubilities prevent creation of Cu-Ta alloys by conventional or rapid solidification processes. Microchemical analyses of the family of Cu 1-x Ta x alloys indicate that PVD can produce materials with any desired level of Ta. X-ray diffraction and transmission electron microscopy analyses show that the as-deposited microstructures consist generally of a Cu matrix supersaturated with Ta and containing a uniform dispersion of Ta particles with diameters below 10 nm. The Ta particles are face centered cubic (exceptionally large Ta particles, larger than ∼100 nm, are body centered cubic) and are oriented identically with the Cu matrix. Particle coarsening studies, at temperatures up to 900C and for times as long as 100 hours, indicate an extreme degree of microstructural stability. The Ta particles also appear highly effective at maintaining a submicron Cu matrix grain size even after annealing at 900C

  4. Synthesis and characterization of Mg-based amorphous alloys and their use for decolorization of Azo dyes

    International Nuclear Information System (INIS)

    Iqbal, M; Wang, W H

    2014-01-01

    Mg-based alloys are light weight and have wide range of applications in the automotive industry. These alloys are widely used because of their very attractive physical and mechanical properties and corrosion resistance. The properties and applications can be further improved by changing the nature of materials from crystalline to amorphous. In this study, melt spun ribbons (MSRs) of Mg 70 Zn 25 Ca 5 Mg 68 Zn 27 Ca 5 alloys were prepared by melt spinning technique by using 3-4N pure metals. Characterization of the samples was done by X-ray diffraction (XRD), differential scanning calorimetry (DSC) and energy dispersive x-ray analyzer (EDAX). Microstructural investigations were conducted by using scanning electron microscopy (SEM), atomic force microscopy (AFM) as well as optical and stereo scan microscopy techniques. DSC results showed multistage crystallization. Activation energy was found to be 225 kJ/mol by Kissinger method indicating good thermal stability against crystallization. XRD, DSC, SEM and EDS (energy dispersive spectroscopy) results are agreed very well. In order to study decolorization, the MSRs of Mg 70 Zn 25 Ca 5 Mg 68 Zn 27 Ca 5 alloys were treated repeatedly with various azo dyes at room temperature. In order to compare the results, MSRs of amorphous Zr- and Ni-based metallic glasses were also treated. Reaction of MSRs with azo dyes results in their decolorization in a few hours. Decolorization of azo dyes takes place by introducing amorphous MSRs which results in breaking the -N=N- bonds that exist in dye contents. It is concluded that Mg-based alloys are useful for paint and dye industries and will be beneficial to control water pollution. Comparison of results showed that Mg-based alloys are more efficient than Zr- and Ni-based amorphous alloys for decolorization of azo dyes

  5. Simultaneous Co-deposition of Zn-Mg Alloy Layers on Steel Strip by PVD Process

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Tae Yeob [POSCO Technical Research Laboratories, Gwangyang (Korea, Republic of); Goodenough, Mark [Strategic Marketing, Tata Steel, Warwickshire (United Kingdom)

    2011-12-15

    This is the first release of an interim report on the development of coating technology of Zn-Mg alloy layers on steel strip by EML-PVD (electromagnetic levitation - physical vapor deposition) process in an air-to-air type continuous PVD pilot plant. It intends to introduce a basic principle of the EML-PVD process together with the high speed PVD pilot plant built in Posco. Due to the agitation effect provided by the high frequency induction coil, simultaneous evaporation of Zn and Mg from a droplet could produce alloy coating layers with Mg content of 6% to 12% depending on the composition of the droplet inside the coil. For its superior corrosion resistance, Zn-Mg alloy coated steel would be a very promising material for automotive, electrical appliances, and construction applications.

  6. Simultaneous Co-deposition of Zn-Mg Alloy Layers on Steel Strip by PVD Process

    International Nuclear Information System (INIS)

    Kim, Tae Yeob; Goodenough, Mark

    2011-01-01

    This is the first release of an interim report on the development of coating technology of Zn-Mg alloy layers on steel strip by EML-PVD (electromagnetic levitation - physical vapor deposition) process in an air-to-air type continuous PVD pilot plant. It intends to introduce a basic principle of the EML-PVD process together with the high speed PVD pilot plant built in Posco. Due to the agitation effect provided by the high frequency induction coil, simultaneous evaporation of Zn and Mg from a droplet could produce alloy coating layers with Mg content of 6% to 12% depending on the composition of the droplet inside the coil. For its superior corrosion resistance, Zn-Mg alloy coated steel would be a very promising material for automotive, electrical appliances, and construction applications

  7. Crystallization of amorphous phase in niobium alloys with oxygen

    International Nuclear Information System (INIS)

    Dekanenko, V.M.; Samojlenko, Z.A.; Revyakin, A.V.

    1982-01-01

    Crystallization and subsequent phase transformations of amorphous phase during annealings in the system Nb-O are studied. It is shown that quenching from liquid state of niobium alloys with oxygen with a rate of 10 5 -10 6 K/s results in partial crystallization of the melt. Phase transition from amorphous to crystal state at 670 K in all probability takes place without the change of chemical composition. After crystallization the decomposition of oversaturated solid solution on the basis of NbO takes place with the separation of low- temperature modification, γ-Nb 2 O 5 . Niobium pentoxide of both modifications during prolong annealings at 770 K and short- time annealings higher 1070 K disappears completely [ru

  8. Comparison of a model vapor deposited glass films to equilibrium glass films

    Science.gov (United States)

    Flenner, Elijah; Berthier, Ludovic; Charbonneau, Patrick; Zamponi, Francesco

    Vapor deposition of particles onto a substrate held at around 85% of the glass transition temperature can create glasses with increased density, enthalpy, kinetic stability, and mechanical stability compared to an ordinary glass created by cooling. It is estimated that an ordinary glass would need to age thousands of years to reach the kinetic stability of a vapor deposited glass, and a natural question is how close to the equilibrium is the vapor deposited glass. To understand the process, algorithms akin to vapor deposition are used to create simulated glasses that have a higher kinetic stability than their annealed counterpart, although these glasses may not be well equilibrated either. Here we use novel models optimized for a swap Monte Carlo algorithm in order to create equilibrium glass films and compare their properties with those of glasses obtained from vapor deposition algorithms. This approach allows us to directly assess the non-equilibrium nature of vapor-deposited ultrastable glasses. Simons Collaboration on Cracking the Glass Problem and NSF Grant No. DMR 1608086.

  9. Mg amorphous alloys for biodegradable implants; Ligas amorfas de magnesio utilizadas em implantes consumiveis

    Energy Technology Data Exchange (ETDEWEB)

    Danez, G.P., E-mail: gabidanez@hotmail.co [Universidade Federal de Sao Carlos (PPG-CEMUFSCar), SP (Brazil). Programa de Pos-Graduacao em Ciencia e Engenharia de Materiais; Koga, G.Y.; Tonucci, S.; Bolfarini, C.; Kiminami, C.S.; Botta Filho, W.J. [Universidade Federal de Sao Carlos (DEMa/UFSCar), SP (Brazil). Dept. de Engenharia de Materiais

    2010-07-01

    The use of implants made from amorphous alloys magnesium-based with additions of zinc and calcium are promising. Properties such as biocompatibility, low density, high mechanical strength, low modulus (as compared to alloys such as stainless steel and titanium), corrosion resistance and wear resistance make it attractive for use in implants. Moreover, the by-products of corrosion and wear are not toxic and may contribute to fixation. Aiming to understand the tendency of this amorphous ternary (Mg-Zn-Ca) and expand the information about this system, this work involved the use of the topological criterion of instability ({lambda}) and the criterion of electronegativity ({Delta}e) to the choice of compositions. The alloys were processed into wedge-shaped and analyzed structurally and in X-ray diffraction and scanning electron microscopy. (author)

  10. High speed cinematography of cracks spreading under failure of amorphous metallic alloys

    Energy Technology Data Exchange (ETDEWEB)

    Tabachnikova, E.D.; Golovin, Y.I.; Makarov, M.V. [AN Ukrainskoj SSR, Kharkov (Ukraine). Fiziko-Tekhnicheskij Inst. Nizkikh Temperatur; Shibkov, A.A.

    1997-08-01

    The results of experimental investigation of crack propagation velocity in amorphous alloys are presented. It is shown that there exists some correlation between crack velocity and fracture mode and morphology (orig.). 4 refs.

  11. Instantaneous formation of SiOx nanocomposite for high capacity lithium ion batteries by enhanced disproportionation reaction during plasma spray physical vapor deposition.

    Science.gov (United States)

    Tashiro, Tohru; Dougakiuchi, Masashi; Kambara, Makoto

    2016-01-01

    Nanocomposite SiO x particles have been produced by a single step plasma spray physical vapor deposition (PS-PVD) through rapid condensation of SiO vapors and the subsequent disproportionation reaction. Core-shell nanoparticles, in which 15 nm crystalline Si is embedded within the amorphous SiO x matrix, form under typical PS-PVD conditions, while 10 nm amorphous particles are formed when processed with an increased degree of non-equilibrium effect. Addition of CH 4 promotes reduction in the oxygen content x of SiO x , and thereby increases the Si volume in a nanocomposite particle. As a result, core-shell nanoparticles with x  = 0.46 as anode exhibit increased initial efficiency and the capacity of lithium ion batteries while maintaining cyclability. Furthermore, it is revealed that the disproportionation reaction of SiO is promoted in nanosized particles attaining increased Si diffusivity by two orders of magnitude compared to that in bulk, which facilitates instantaneous composite nanoparticle formation during PS-PVD.

  12. First-principles study of the structural and dynamic properties of the liquid and amorphous Li–Si alloys

    Energy Technology Data Exchange (ETDEWEB)

    Chiang, Han-Hsin; Kuo, Chin-Lung, E-mail: chinlung@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Lu, Jian-Ming [National Center for High-Performance Computing, Tainan 74147, Taiwan (China)

    2016-01-21

    We have performed density functional theory calculations and ab initio molecular dynamics to investigate the structures and dynamic properties of the liquid and amorphous Li{sub x}Si alloys over a range of composition from x = 1.0 − 4.8. Our results show that Si atoms can form a variety of covalently bonded polyanions with diverse local bonding structures in the liquid alloys. Like in c-LiSi, Si atoms can form a continuous bond network in liquid Li{sub 1.0}Si at 1050 K, while it gradually disintegrates into many smaller Si polyanions as the Li content increases in the alloys. The average sizes of Si polyanions in these liquid alloys were found to be relatively larger than those in their crystalline counterparts, which can even persist in the highly lithiated Li{sub 4.81}Si alloy at 1500 K. Our results also show that amorphous Li{sub x}Si alloys have similar local bonding structures but a largely increased short-range order as compared to their liquid counterparts. The differences between the average coordination number of each atomic pair in amorphous solids and that in the liquids are less than 1.1. Furthermore, our calculations reveal that Li and Si atoms can exhibit very distinct dynamic behaviors in the liquids and their diffusivities appear to be largely dependent on the chemical composition of the alloys. The diffusivity of Li was found to increase with the Li content in the alloys primarily because of the reduced interactions between Li and Si atoms, while the Si diffusivity also increases due to the gradual disintegration of the strongly interconnected Si bond network. The diffusivity of Li in amorphous Li{sub x}Si was predicted to lie in the range between 10{sup −7} and 10{sup −9} cm{sup 2}/s at 300 K, which is more than 20-fold larger than that of Si over the composition range considered. Our calculations further show that the diffusivities of both Li and Si can increase by two orders of magnitude as x increases from 1.0 to 3.57 in amorphous Li

  13. Elastic properties of amorphous thin films studied by Rayleigh waves

    International Nuclear Information System (INIS)

    Schwarz, R.B.; Rubin, J.B.

    1993-01-01

    Physical vapor deposition in ultra-high vacuum was used to co-deposit nickel and zirconium onto quartz single crystals and grow amorphous Ni 1-x Zr x (0.1 < x < 0.87) thin film. A high-resolution surface acoustic wave technique was developed for in situ measurement of film shear moduli. The modulus has narrow maxima at x = 0. 17, 0.22, 0.43, 0.5, 0.63, and 0.72, reflecting short-range ordering and formation of aggregates in amorphous phase. It is proposed that the aggregates correspond to polytetrahedral atom arrangements limited in size by geometrical frustration

  14. High-aspect-ratio and high-flatness Cu3(SiGe) nanoplatelets prepared by chemical vapor deposition.

    Science.gov (United States)

    Klementová, Mariana; Palatinus, Lukás; Novotný, Filip; Fajgar, Radek; Subrt, Jan; Drínek, Vladislav

    2013-06-01

    Cu3(SiGe) nanoplatelets were synthesized by low-pressure chemical vapor deposition of a SiH3C2H5/Ge2(CH3)6 mixture on a Cu-substrate at 500 degrees C, total pressure of 110-115 Pa, and Ge/Si molar ratio of 22. The nanoplatelets with composition Cu76Si15Ge12 are formed by the 4'-phase, and they are flattened perpendicular to the [001] direction. Their lateral dimensions reach several tens of micrometers in size, but they are only about 50 nm thick. Their surface is extremely flat, with measured root mean square roughness R(q) below 0.2 nm. The nanoplatelets grow via the non-catalytic vapor-solid mechanism and surface growth. In addition, nanowires and nanorods of various Cu-Si-Ge alloys were also obtained depending on the experimental conditions. Morphology of the resulting Cu-Si-Ge nanoobjects is very sensitive to the experimental parameters. The formation of nanoplatelets is associated with increased amount of Ge in the alloy.

  15. Electrochemical deposition and characterization of zinc–nickel alloys deposited by direct and reverse current

    Directory of Open Access Journals (Sweden)

    JELENA B. BAJAT

    2005-12-01

    Full Text Available Zn–Ni alloys electrochemically deposited on steel under various deposition conditions were investigated. The alloys were deposited on a rotating disc electrode and on a steel panel from chloride solutions by direct and reverse current. The influence of reverse plating variables (cathodic and anodic current densities and their time duration on the composition, phase structure and corrosion properties were investigated. The chemical content and phase composition affect the anticorrosive properties of Zn–Ni alloys during exposure to a corrosive agent (3 % NaCl solution. It was shown that the Zn–Ni alloy electrodeposited by reverse current with a full period T = 1 s and r = 0.2 exhibits the best corrosion properties of all the investigated alloys deposited by reverse current.

  16. High strength nanostructured Al-based alloys through optimized processing of rapidly quenched amorphous precursors.

    Science.gov (United States)

    Kim, Song-Yi; Lee, Gwang-Yeob; Park, Gyu-Hyeon; Kim, Hyeon-Ah; Lee, A-Young; Scudino, Sergio; Prashanth, Konda Gokuldoss; Kim, Do-Hyang; Eckert, Jürgen; Lee, Min-Ha

    2018-01-18

    We report the methods increasing both strength and ductility of aluminum alloys transformed from amorphous precursor. The mechanical properties of bulk samples produced by spark-plasma sintering (SPS) of amorphous Al-Ni-Co-Dy powders at temperatures above 673 K are significantly enhanced by in-situ crystallization of nano-scale intermetallic compounds during the SPS process. The spark plasma sintered Al 84 Ni 7 Co 3 Dy 6 bulk specimens exhibit 1433 MPa compressive yield strength and 1773 MPa maximum strength together with 5.6% plastic strain, respectively. The addition of Dy enhances the thermal stability of primary fcc Al in the amorphous Al-TM -RE alloy. The precipitation of intermetallic phases by crystallization of the remaining amorphous matrix plays important role to restrict the growth of the fcc Al phase and contributes to the improvement of the mechanical properties. Such fully crystalline nano- or ultrafine-scale Al-Ni-Co-Dy systems are considered promising for industrial application because their superior mechanical properties in terms of a combination of very high room temperature strength combined with good ductility.

  17. Amorphous silicon as high index photonic material

    Science.gov (United States)

    Lipka, T.; Harke, A.; Horn, O.; Amthor, J.; Müller, J.

    2009-05-01

    Silicon-on-Insulator (SOI) photonics has become an attractive research topic within the area of integrated optics. This paper aims to fabricate SOI-structures for optical communication applications with lower costs compared to standard fabrication processes as well as to provide a higher flexibility with respect to waveguide and substrate material choice. Amorphous silicon is deposited on thermal oxidized silicon wafers with plasma-enhanced chemical vapor deposition (PECVD). The material is optimized in terms of optical light transmission and refractive index. Different a-Si:H waveguides with low propagation losses are presented. The waveguides were processed with CMOS-compatible fabrication technologies and standard DUV-lithography enabling high volume production. To overcome the large mode-field diameter mismatch between incoupling fiber and sub-μm waveguides three dimensional, amorphous silicon tapers were fabricated with a KOH etched shadow mask for patterning. Using ellipsometric and Raman spectroscopic measurements the material properties as refractive index, layer thickness, crystallinity and material composition were analyzed. Rapid thermal annealing (RTA) experiments of amorphous thin films and rib waveguides were performed aiming to tune the refractive index of the deposited a-Si:H waveguide core layer after deposition.

  18. Evidence of the extended orientational order in amorphous alloys obtained from magnetic measurements

    International Nuclear Information System (INIS)

    Chudnovsky, E.M.; Tejada, J.

    1993-01-01

    Magnetic measurements of R-Fe-B (R = rare earth) amorphous alloys show that magnetic anisotropy axes are correlated on the scale ∼ 100 A. The X-ray study of these materials does not reveal any positional correlations beyond the 10 A scale. These observations support theoretical suggestions that the orientational order in amorphous systems can be much more extended than the positional order. (orig.)

  19. Hydrogen plasma enhanced alignment on CNT-STM tips grown by liquid catalyst-assisted microwave plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Tung, Fa-Kuei; Yoshimura, Masamichi; Ueda, Kazuyuki; Ohira, Yutaka; Tanji, Takayoshi

    2008-01-01

    Carbon nanotubes are grown directly on a scanning tunneling microscopy tip by liquid catalyst-assisted microwave-enhanced chemical vapor deposition, and effects of hydrogen plasma treatment on the tip have been investigated in detail by field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and Raman spectroscopy. The unaligned CNTs on the as-grown tip apex have been realigned and reshaped by subsequent hydrogen plasma treatment. The diameter of CNTs is enlarged mainly due to amorphous layers being re-sputtered over their outer shells

  20. Spectral analysis of creep recovery process in finemet type amorphous alloy

    NARCIS (Netherlands)

    Jurikova, A; Csach, K; Miskuf, J; Bengus, VZ; Ocelik, Vaclav

    2002-01-01

    The creep recovery process in Finemet type amorphous alloy leas been analyzed using the method for calculating the relaxation tithe spectra. The influence of structural relaxation and temperature on the spectra shape lags been studied. The creep recovery spectrum of the anelastic deformation of the

  1. Neutron irradiation induced amorphization of silicon carbide

    International Nuclear Information System (INIS)

    Snead, L.L.; Hay, J.C.

    1998-01-01

    This paper provides the first known observation of silicon carbide fully amorphized under neutron irradiation. Both high purity single crystal hcp and high purity, highly faulted (cubic) chemically vapor deposited (CVD) SiC were irradiated at approximately 60 C to a total fast neutron fluence of 2.6 x 10 25 n/m 2 . Amorphization was seen in both materials, as evidenced by TEM, electron diffraction, and x-ray diffraction techniques. Physical properties for the amorphized single crystal material are reported including large changes in density (-10.8%), elastic modulus as measured using a nanoindentation technique (-45%), hardness as measured by nanoindentation (-45%), and standard Vickers hardness (-24%). Similar property changes are observed for the critical temperature for amorphization at this neutron dose and flux, above which amorphization is not possible, is estimated to be greater than 130 C

  2. A new Ti-Zr-Hf-Cu-Ni-Si-Sn bulk amorphous alloy with high glass-forming ability

    International Nuclear Information System (INIS)

    Huang, Y.J.; Shen, J.; Sun, J.F.; Yu, X.B.

    2007-01-01

    The effect of Sn substitution for Cu on the glass-forming ability was investigated in Ti 41.5 Zr 2.5 Hf 5 Cu 42.5-x Ni 7.5 Si 1 Sn x (x = 0, 1, 3, 5, 7) alloys by using differential scanning calorimetry (DSC) and X-ray diffractometry. The alloy containing 5% Sn shows the highest glass-forming ability (GFA) among the Ti-Zr-Hf-Cu-Ni-Si-Sn system. Fully amorphous rod sample with diameters up to 6 mm could be successfully fabricated by the copper mold casting Ti 41.5 Zr 2.5 Hf 5 Cu 37.5 Ni 7.5 Si 1 Sn 5 alloy. The activation energies for glass transition and crystallization for Ti 41.5 Zr 2.5 Hf 5 Cu 37.5 Ni 7.5 Si 1 Sn 5 amorphous alloy are both larger than those values for the Sn-free alloy. The enhancement in GFA and thermal stability after the partial replacement of Cu by Sn may be contributed to the strong atomic bonding nature between Ti and Sn and the increasing of atomic packing density. The amorphous Ti 41.5 Zr 2.5 Hf 5 Cu 37.5 Ni 7.5 Si 1 Sn 5 alloy also possesses superior mechanical properties

  3. Selective metal-vapor deposition on solvent evaporated polymer surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Yamaguchi, Koji; Tsujioka, Tsuyoshi, E-mail: tsujioka@cc.osaka-kyoiku.ac.jp

    2015-12-31

    We report a selective metal-vapor deposition phenomenon based on solvent printing and evaporation on polymer surfaces and propose a method to prepare fine metal patterns using maskless vacuum deposition. Evaporation of the solvent molecules from the surface caused large free volumes between surface polymer chains and resulted in high mobility of the chains, enhancing metal-vapor atom desorption from the surface. This phenomenon was applied to prepare metal patterns on the polymer surface using solvent printing and maskless metal vacuum deposition. Metal patterns with high resolution of micron scale were obtained for various metal species and semiconductor polymer substrates including poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] and poly(3-hexylthiophene-2,5-diyl). - Highlights: • Selective metal-vapor deposition using solvent evaporation on polymer was attained. • Metal patterns with high resolution were obtained for various metal species. • This method can be applied to achieve fine metal-electrodes for polymer electronics.

  4. Moessbauer study of amorphous alloys irradiated with energetic heavy ions

    International Nuclear Information System (INIS)

    Kuzmann, E.; Spirov, I.N.

    1984-01-01

    The Moessbauer spectroscopy was applied to study radiation damages in amorphous alloys irradiated with 40 Ar (E=225 MeV) or 132 Xe (E=120 MeV) ions at room temperature. In the magnetically splitted Moessbauer spectra the dose-dependent decreases of the intensity of the 2nd and 5th lines as well as of the average hyperfine magnetic field were observed. The changes weAe also analysed using the hyperfine field distribution obtained from the spectra. The results are interpreted in terms of defect creation and structural changes of shortrange order of irradiated amorphoys alloys

  5. Fluxing purification and its effect on magnetic properties of high-B{sub s} FeBPSiC amorphous alloy

    Energy Technology Data Exchange (ETDEWEB)

    Pang, Jing [School of Materials Science and Engineering, Shenyang University of Technology, Shenyang, Liaoning 110870 (China); Wang, Anding, E-mail: anding@nimte.ac.cn [Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201 (China); Center for Advanced Structural Materials, Department of Mechanical and Biomedical Engineering, College of Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong (China); Yue, Shiqiang [Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201 (China); Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Kong, Fengyu [School of Materials and Chemical Engineering, Ningbo University of Technology, Ningbo 315016 (China); Qiu, Keqiang, E-mail: kqqiu@163.com [School of Materials Science and Engineering, Shenyang University of Technology, Shenyang, Liaoning 110870 (China); Chang, Chuntao; Wang, Xinmin [Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201 (China); Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Liu, Chain-Tsuan, E-mail: chainliu@cityu.edu.hk [Center for Advanced Structural Materials, Department of Mechanical and Biomedical Engineering, College of Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong (China)

    2017-07-01

    Highlights: • Surface crystallization in Fe{sub 83}B{sub 11}P{sub 3}Si{sub 2}C{sub 1} ribbon was inhibited by flux purification. • Amorphous Fe{sub 83}B{sub 11}P{sub 3}Si{sub 2}C{sub 1} ribbon was made with industrial process and materials. • The ribbons exhibit high B{sub s} of 1.65 T, low H{sub c} of 2 A/m, and high μ{sub e} of 9.7 × 10{sup 3}. • High melting point inclusions trigger the surface crystallization as nuclei. - Abstract: A high-B{sub s} amorphous alloy with the base composition Fe{sub 83}B{sub 11}P{sub 3}Si{sub 2}C{sub 1} was used to study the effects of fluxing purification on amorphous forming ability and magnetic properties of the alloy prepared with raw materials in industrialization. By using fluxing purification, the surface crystallization was suppressed and fully amorphous Fe{sub 83}B{sub 11}P{sub 3}Si{sub 2}C{sub 1} ribbons with a maximum thickness of 48 μm were successfully achieved by using an industrial process and materials. The amorphous ribbons made with industrial-purified alloys exhibit excellent magnetic properties, containing high-B{sub s} of 1.65 T, low H{sub c} of 2.0 A/m, and high μ{sub e} of 9.7 × 10{sup 3} at 1 kHz. Impurities in the melting alloys exist in three forms and have different effluences on magnetic properties. The surface crystallization was triggered by the impurities which exist as high melting point inclusions serving as nuclei. Thus, fluxing purification is a feasible way for industrialization of high-B{sub s} FeBPSiC amorphous alloys.

  6. Local order dynamics: its application to the study of atomic mobility, of point defects in crystalline alloys, and of structural relaxation in amorphous alloys

    International Nuclear Information System (INIS)

    Balanzat, Emmanuel

    1983-01-01

    This research thesis addressed the study of the atomic mobility mechanism and of the atom movement dynamics in the case of crystalline alloys and of amorphous alloys. The first part is based on a previous study performed on an α-Cu 70 -Zn 30 crystalline alloy, and addresses the case of an α-Au 70 -Ni 30 alloy. The specificity of this case relies in the fact that the considered solid solution is metastable and susceptible to de-mixing in the considered temperature range. This case of off-equilibrium crystalline alloy is at the crossroad between steady crystalline alloys and metallic glasses which are studied in the second part. The third part addresses the irradiation of metallic amorphous alloys by fast particles (neutrons or electrons). The author tried to characterise atomic defects induced by irradiation and to compare them with pre-existing ones. He studied how these defects may change atomic mobility, and, more generally, to which extent the impact of energetic particles could modify local order status

  7. Electronic Structures Localized at the Boron Atom in Amorphous Fe-B and Fe-B-P Alloys

    Science.gov (United States)

    Yasuda, Hidehiro; Nakayama, Hiroshi; Fujita, Hiroshi

    1989-11-01

    The electronic structures localized at the B in amorphous Fe-B and Fe-B-P alloys and their crystallized alloys were studied by Auger valence electron spectroscopy and the states of solute B are discussed based on the change in the degree of covalent bonding and the charge transfer between the Fe and B atoms. In amorphous phases, the charge transfers from Fe to B above 15at%B where B atoms occupy the substitutionallike situations, and from B to Fe below 15at%B where B atoms occupy the interstitiallike situations. Magnetic properties depend on such states of solute B. In crystalline phases, covalent bonding becomes dominant because the electron excitation occurs to the B2p state. Consequently, amorphous phases are more metallic in character than crystalline phases and amorphous structures are stabilized by a mixture of more than two different bonding states.

  8. Structure and thermal stability of biodegradable Mg-Zn-Ca based amorphous alloys synthesized by mechanical alloying

    Energy Technology Data Exchange (ETDEWEB)

    Datta, Moni Kanchan; Chou, Da-Tren; Hong, Daeho; Saha, Partha [Department of Bioengineering, Swanson School of Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Chung, Sung Jae [Mechanical Engineering and Materials Science, Swanson School of Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Lee, Bouen [Department of Bioengineering, Swanson School of Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Sirinterlikci, Arif [Department of Engineering, Robert Morris University, Moon Township, Pittsburgh, PA 15108 (United States); Ramanathan, Madhumati; Roy, Abhijit [Department of Bioengineering, Swanson School of Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Kumta, Prashant N., E-mail: matscib@gmail.com [Department of Bioengineering, Swanson School of Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Mechanical Engineering and Materials Science, Swanson School of Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Chemical and Petroleum Engineering, Swanson School of Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States); School of Dental Medicine, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Center for Complex Engineered Multifunctional Materials, University of Pittsburgh, Pittsburgh, PA 15261 (United States)

    2011-12-15

    Room temperature solid state diffusion reaction induced by mechanical alloying (MA) of elemental blends of Mg, Zn and Ca of nominal composition 60 at.% Mg-35 at.% Zn-5 at.% Ca has been studied. Formation of fully amorphous structure has been identified after 5 h of MA performed in a SPEX 8000M shaker mill, with milling continued up to 8 h to confirm the formation of homogeneous amorphous phase. Thermal stability of the amorphous phase has been studied using differential scanning calorimetry (DSC) and isothermal heat treatment at different temperatures. The amorphous powder consolidated using cold isostatic pressing (CIP) showed an envelope density {approx}80% of absolute density, which increased to an envelope density {approx}84% of absolute density after sintering at an optimized temperature of {approx}523 K for 9 h. Electrochemical bio-corrosion testing of the CIP compacted amorphous pellet as well as the sintered pellet performed in Dulbecco's Modified Eagle Medium, showed improved corrosion resistance in comparison to the as-cast pure Mg. Cytotoxicity testing of the CIP compacted amorphous pellet, performed using the MTT assay with MC3T3 osteoblastic cells, showed low cytotoxicity in comparison to the as-cast pure Mg.

  9. Hard graphitelike hydrogenated amorphous carbon grown at high rates by a remote plasma

    DEFF Research Database (Denmark)

    Singh, Shailendra Vikram; Zaharia, T.; Creatore, M.

    2010-01-01

    Hydrogenated amorphous carbon (a-C:H) deposited from an Ar-C 2H2 expanding thermal plasma chemical vapor deposition (ETP-CVD) is reported. The downstream plasma region of an ETP is characterized by a low electron temperature (∼0.3 eV), which leads to an ion driven chemistry and negligible physical...

  10. Preparation and characterisation of Co–Fe–Ni–M-Si–B (M = Zr, Ti) amorphous powders by wet mechanical alloying

    Energy Technology Data Exchange (ETDEWEB)

    Neamţu, B.V., E-mail: Bogdan.Neamtu@stm.utcluj.ro [Materials Science and Engineering Department, Technical University of Cluj-Napoca, 103-105, Muncii Avenue, 400641, Cluj-Napoca (Romania); Chicinaş, H.F.; Marinca, T.F. [Materials Science and Engineering Department, Technical University of Cluj-Napoca, 103-105, Muncii Avenue, 400641, Cluj-Napoca (Romania); Isnard, O. [Université Grenoble Alpes, Institut NEEL, F-38042, Grenoble (France); CNRS, Institut NEEL, 25 rue des martyrs, BP166, F-38042, Grenoble (France); Chicinaş, I. [Materials Science and Engineering Department, Technical University of Cluj-Napoca, 103-105, Muncii Avenue, 400641, Cluj-Napoca (Romania)

    2016-07-15

    Co-based amorphous alloys were prepared via wet mechanical alloying process starting from elemental powders. The reference alloy Co{sub 70}Fe{sub 4}Ni{sub 2}Si{sub 15}B{sub 9} (at. %) as well as the alloys derived from this composition by the substitution of 5 at.% of Zr or Ti for Si or B (Co{sub 70}Fe{sub 4}Ni{sub 2}Si{sub 15}B{sub 4}Zr{sub 5}, Co{sub 70}Fe{sub 4}Ni{sub 2}Si{sub 15}B{sub 4}Ti{sub 5}, Co{sub 70}Fe{sub 4}Ni{sub 2}Si{sub 10}B{sub 9}Zr{sub 5} and Co{sub 70}Fe{sub 4}Ni{sub 2}Si{sub 10}B{sub 9}Ti{sub 5}) are obtained in amorphous state, according to X-ray diffraction (XRD) investigation, after 40 h of milling. The calculated amount of amorphous fraction reaches 99% after 40 h of milling. The largest increase of the crystallisation temperature was induced by the substitution of Zr or Ti for Si while, regardless of the type of substitution, an important increase of the Curie temperature of the alloy was obtained. A Co-based solid solution, with Co{sub 2}Si and Co{sub 2}B phases, result after crystallisation of the amorphous alloys as proved by XRD investigations. Saturation magnetisation of the alloys decreases upon increasing milling time, however it remains larger than the saturation magnetisation of the reference alloy. This was discussed in correlation with the specificity of the wet mechanical alloying process and the influence of the chemical bonding between Co and metalloids atoms over the magnetic moment of Co. - Highlights: • Co–Fe–Ni–M-Si–B (M = Zr, Ti) amorphous powders were prepared by wet MA. • Amorphisation of the alloy is reached after 40 h of wet MA for any composition. • Magnetisation decrease upon increasing milling time. • Substituting 5% Zr/Ti for Si increases significantly the alloy's thermal stability. • Substitution of 5 at. % Zr/Ti for Si increases the saturation magnetisation by 20%.

  11. Impact of hydrogen dilution on optical properties of intrinsic hydrogenated amorphous silicon films prepared by high density plasma chemical vapor deposition for solar cell applications

    Science.gov (United States)

    Chen, Huai-Yi; Lee, Yao-Jen; Chang, Chien-Pin; Koo, Horng-Show; Lai, Chiung-Hui

    2013-01-01

    P-i-n single-junction hydrogenated amorphous silicon (a-Si:H) thin film solar cells were successfully fabricated in this study on a glass substrate by high density plasma chemical vapor deposition (HDP-CVD) at low power of 50 W, low temperature of 200°C and various hydrogen dilution ratios (R). The open circuit voltage (Voc ), short circuit current density (Jsc ), fill factor (FF) and conversion efficiency (η) of the solar cell as well as the refractive index (n) and absorption coefficient (α) of the i-layer at 600 nm wavelength rise with increasing R until an abrupt drop at high hydrogen dilution, i.e. R > 0.95. However, the optical energy bandgap (Eg ) of the i-layer decreases with the R increase. Voc and α are inversely correlated with Eg . The hydrogen content affects the i-layer and p/i interface quality of the a-Si:H thin film solar cell with an optimal value of R = 0.95, which corresponds to solar cell conversion efficiency of 3.85%. The proposed a-Si:H thin film solar cell is expected to be improved in performance.

  12. PECVD deposition of device-quality intrinsic amorphous silicon at high growth rate

    Energy Technology Data Exchange (ETDEWEB)

    Carabe, J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Gandia, J J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Gutierrez, M T [Inst. de Energias Renovables, CIEMAT, Madrid (Spain)

    1993-11-01

    The combined influence of RF-power density (RFP) and silane flow-rate ([Phi]) on the deposition rate of plasma-enhanced chemical vapour deposition (PECVD) intrinsic amorphous silicon has been investigated. The correlation of the results obtained from the characterisation of the material with the silane deposition efficiency, as deduced from mass spectrometry, has led to an interpretation allowing to deposit intrinsic amorphous-silicon films having an optical gap of 1.87 eV and a photoconductive ratio (ratio of ambient-temperature conductivities under 1 sun AM1 and in dark) of 6 orders of magnitude at growth rates up to 10 A/s, without any structural modification of the PECVD system used. Such results are considered of high relevance regarding industrial competitiveness. (orig.)

  13. Microstructure, soft magnetic properties and applications of amorphous Fe-Co-Si-B-Mo-P alloy

    Science.gov (United States)

    Hasiak, Mariusz; Miglierini, Marcel; Łukiewski, Mirosław; Łaszcz, Amadeusz; Bujdoš, Marek

    2018-05-01

    DC thermomagnetic properties of Fe51Co12Si16B8Mo5P8 amorphous alloy in the as-quenched and after annealing below crystallization temperature are investigated. They are related to deviations in the microstructure as revealed by Mössbauer spectrometry. Study of AC magnetic properties, i.e. hysteresis loops, relative permeability and core losses versus maximum induction was aimed at obtaining optimal initial parameters for simulation process of a resonant transformer for a rail power supply converter. The results obtained from numerical analyses including core losses, winding losses, core mass, and dimensions were compared with the same parameters calculated for Fe-Si alloy and ferrite. Moreover, Steinmetz coefficients were also calculated for the as-quenched Fe51Co12Si16B8Mo5P8 amorphous alloy.

  14. Temperature dependence of the electrical resistivity of amorphous Co80-xErxB20 alloys

    International Nuclear Information System (INIS)

    Touraghe, O.; Khatami, M.; Menny, A.; Lassri, H.; Nouneh, K.

    2008-01-01

    The temperature dependence of the electrical resistivity of amorphous Co 80-x Er x B 20 alloys with x=0, 3.9, 7.5 and 8.6 prepared by melt spinning in pure argon atmosphere was studied. All amorphous alloys investigated here are found to exhibit a resistivity minimum at low temperature. The electrical resistivity exhibits logarithmic temperature dependence below the temperature of resistivity minimum T min . In addition, the resistivity shows quadratic temperature behavior in the interval T min < T<77 K. At high temperature, the electrical resistivity was discussed by the extended Ziman theory. For the whole series of alloys, the composition dependence of the temperature coefficient of electrical resistivity α shows a change in structural short range occurring in the composition range 8-9 at%

  15. Amorphization of Fe-Nb by mechanical alloying

    International Nuclear Information System (INIS)

    Yang, J.Y.; Zhang, T.J.; Cui, K.; Li, X.G.; Zhang, J.

    1996-01-01

    Elemental powder mixtures of Fe x Nb 1-x were mechanically alloyed in a planetary ball mill. Powders milled for different times were characterized by X-ray diffraction, transmission and scanning electron microscopy, differential thermal analysis and microhardness measurement. The results show that powders with 0.30≤x≤0.70 could be amorphized after 30 h milling; the maximum hardness (Hv) of milled Fe 50 Nb 50 powders attained was 1490. Based on a thermodynamical analysis, the glass forming range of the Fe-Nb system was calculated, and found to agree with the experimental result very well. (orig.)

  16. Structural order and magnetism of rare-earth metallic amorphous alloys

    International Nuclear Information System (INIS)

    Maurer, M.

    1984-01-01

    Local symmetry (as evaluated from the electric field gradient tensor) and radial distribution functions (obtained by EXAFS measurement) are determined in a series of amorphous rare-earth base alloys. Local order is found to increase with the extent of heteroatomic interactions. Various magnetic phases (including ferromagnetic, spin-glass, reentrant spin-glass) occur for europium alloys with simple metals (Mg, Zn, Cd, Al, Au, ...). This variety reflects the sensitivity of exchange interactions to the presence of non-s conduction electrons. Asperomagnetic structures are established for the Dy alloys. The crystalline electric field interactions at the Dy 3+ ions are interpreted with the help of local symmetry data. Quadratic axial and non-axial crystal field terms are sufficient and necessary in order to account for the hyperfine and bulk experimental results [fr

  17. Diffuse scattering from the liquid-vapor interfaces of dilute Bi:Ga, Tl:Ga, and Pb:Ga alloys

    International Nuclear Information System (INIS)

    Li Dongxu; Jiang Xu; Rice, Stuart A.; Lin Binhua; Meron, Mati

    2005-01-01

    As part of a study of the in-plane wave-vector (q xy ) dependence of the effective Hamiltonian for the liquid-vapor interface, H(q), the wave-vector dependences of diffuse x-ray scattering from the liquid-vapor interfaces of dilute alloys of Bi in Ga, Tl in Ga, and Pb in Ga have been measured. In these dilute alloys the solute component segregates as a monolayer that forms the outermost stratum of the liquid-vapor interfaces, and the density distribution along the normal to the interface is stratified. Over the temperature ranges that the alloy interfaces were studied, the Tl and Pb monolayers exhibit both crystalline and liquid phases while the Bi monolayer is always liquid. The diffuse scattering from the liquid-vapor interfaces of these alloys displays interesting differences with that from the liquid-vapor interface of pure Ga. The presence of a segregated monolayer of solute in the liquid-vapor interface of the alloy appears to slightly suppress the fluctuations in an intermediate wave-vector range in a fashion that preserves the validity of the macroscopic capillary wave model to smaller wavelengths than in pure liquid Ga, and there is an increase in diffuse scattering when the Tl and Pb monolayers melt. The surface intrinsic roughness from fitting the wave-vector dependence of surface tension is 5.0 pm for the Tl:Ga alloy and 1.4 pm for the Bi:Ga alloy. Also, a mode of excitation that contributes to diffuse scattering from the liquid-vapor interface of Pb in Ga, but does not contribute to diffuse scattering from the liquid-vapor interface of Ga, has been identified. It is proposed that this mode corresponds to the separation of the Pb and Ga layers in the regime 1 nm -1 ≤q xy ≤10 nm -1

  18. Deposition and properties of cobalt- and ruthenium-based ultra-thin films

    Science.gov (United States)

    Henderson, Lucas Benjamin

    Future copper interconnect systems will require replacement of the materials that currently comprise both the liner layer(s) and the capping layer. Ruthenium has previously been considered as a material that could function as a single material liner, however its poor ability to prevent copper diffusion makes it incompatible with liner requirements. A recently described chemical vapor deposition route to amorphous ruthenium-phosphorus alloy films could correct this problem by eliminating the grain boundaries found in pure ruthenium films. Bias-temperature stressing of capacitor structures using 5 nm ruthenium-phosphorus film as a barrier to copper diffusion and analysis of the times-to-failure at accelerated temperature and field conditions implies that ruthenium-phosphorus performs acceptably as a diffusion barrier for temperatures above 165°C. The future problems associated with the copper capping layer are primarily due to the poor adhesion between copper and the current Si-based capping layers. Cobalt, which adheres well to copper, has been widely proposed to replace the Si-based materials, but its ability to prevent copper diffusion must be improved if it is to be successfully implemented in the interconnect. Using a dual-source chemistry of dicobaltoctacarbonyl and trimethylphosphine at temperatures from 250-350°C, amorphous cobalt-phosphorus can be deposited by chemical vapor deposition. The films contain elemental cobalt and phosphorus, plus some carbon impurity, which is incorporated in the film as both graphitic and carbidic (bonded to cobalt) carbon. When deposited on copper, the adhesion between the two materials remains strong despite the presence of phosphorus and carbon at the interface, but the selectivity for growth on copper compared to silicon dioxide is poor and must be improved prior to consideration for application in interconnect systems. A single molecule precursor containing both cobalt and phosphorus atoms, tetrakis

  19. Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films

    Science.gov (United States)

    Alcinkaya, Burak; Sel, Kivanc

    2018-01-01

    The properties of phosphorus doped hydrogenated amorphous silicon carbide (a-SiCx:H) thin films, that were deposited by plasma enhanced chemical vapor deposition technique with four different carbon contents (x), were analyzed and compared with those of the intrinsic a-SiCx:H thin films. The carbon contents of the films were determined by X-ray photoelectron spectroscopy. The thickness and optical energies, such as Tauc, E04 and Urbach energies, of the thin films were determined by UV-Visible transmittance spectroscopy. The electrical properties of the films, such as conductivities and activation energies were analyzed by temperature dependent current-voltage measurements. Finally, the conduction mechanisms of the films were investigated by numerical analysis, in which the standard transport mechanism in the extended states and the nearest neighbor hopping mechanism in the band tail states were taken into consideration. It was determined that, by the effect of phosphorus doping the dominant conduction mechanism was the standard transport mechanism for all carbon contents.

  20. Advanced deposition model for thermal activated chemical vapor deposition

    Science.gov (United States)

    Cai, Dang

    Thermal Activated Chemical Vapor Deposition (TACVD) is defined as the formation of a stable solid product on a heated substrate surface from chemical reactions and/or dissociation of gaseous reactants in an activated environment. It has become an essential process for producing solid film, bulk material, coating, fibers, powders and monolithic components. Global market of CVD products has reached multi billions dollars for each year. In the recent years CVD process has been extensively used to manufacture semiconductors and other electronic components such as polysilicon, AlN and GaN. Extensive research effort has been directed to improve deposition quality and throughput. To obtain fast and high quality deposition, operational conditions such as temperature, pressure, fluid velocity and species concentration and geometry conditions such as source-substrate distance need to be well controlled in a CVD system. This thesis will focus on design of CVD processes through understanding the transport and reaction phenomena in the growth reactor. Since the in situ monitor is almost impossible for CVD reactor, many industrial resources have been expended to determine the optimum design by semi-empirical methods and trial-and-error procedures. This approach has allowed the achievement of improvements in the deposition sequence, but begins to show its limitations, as this method cannot always fulfill the more and more stringent specifications of the industry. To resolve this problem, numerical simulation is widely used in studying the growth techniques. The difficulty of numerical simulation of TACVD crystal growth process lies in the simulation of gas phase and surface reactions, especially the latter one, due to the fact that very limited kinetic information is available in the open literature. In this thesis, an advanced deposition model was developed to study the multi-component fluid flow, homogeneous gas phase reactions inside the reactor chamber, heterogeneous surface

  1. Copper-vapor-catalyzed chemical vapor deposition of graphene on dielectric substrates

    Science.gov (United States)

    Yang, Chao; Wu, Tianru; Wang, Haomin; Zhang, Xuefu; Shi, Zhiyuan; Xie, Xiaoming

    2017-07-01

    Direct synthesis of high-quality graphene on dielectric substrates is important for its application in electronics. In this work, we report the process of copper-vapor-catalyzed chemical vapor deposition of high-quality and large graphene domains on various dielectric substrates. The copper vapor plays a vital role on the growth of transfer-free graphene. Both single-crystal domains that are much larger than previous reports and high-coverage graphene films can be obtained by adjusting the growth duration. The quality of the obtained graphene was verified to be comparable with that of graphene grown on Cu foil. The progress reported in this work will aid the development of the application of transfer-free graphene in the future.

  2. Enthalpy and high temperature relaxation kinetics of stable vapor-deposited glasses of toluene

    International Nuclear Information System (INIS)

    Bhattacharya, Deepanjan; Sadtchenko, Vlad

    2014-01-01

    Stable non-crystalline toluene films of micrometer and nanometer thicknesses were grown by vapor deposition at distinct rates and probed by fast scanning calorimetry. Fast scanning calorimetry is shown to be extremely sensitive to the structure of the vapor-deposited phase and was used to characterize simultaneously its kinetic stability and its thermodynamic properties. According to our analysis, transformation of vapor-deposited samples of toluene during heating with rates in excess 10 5 K s −1 follows the zero-order kinetics. The transformation rate correlates strongly with the initial enthalpy of the sample, which increases with the deposition rate according to sub-linear law. Analysis of the transformation kinetics of vapor-deposited toluene films of various thicknesses reveal a sudden increase in the transformation rate for films thinner than 250 nm. The change in kinetics seems to correlate with the surface roughness scale of the substrate. The implications of these findings for the formation mechanism and structure of vapor-deposited stable glasses are discussed

  3. Comparison of precursors for pulsed metal-organic chemical vapor deposition of HfO2 high-K dielectric thin films

    International Nuclear Information System (INIS)

    Teren, Andrew R.; Thomas, Reji; He, Jiaqing; Ehrhart, Peter

    2005-01-01

    Hafnium oxide films were deposited on Si(100) substrates using pulsed metal-organic chemical vapor deposition (CVD) and evaluated for high-K dielectric applications. Three types of precursors were tested: two oxygenated ones, Hf butoxide-dmae and Hf butoxide-mmp, and an oxygen-free one, Hf diethyl-amide. Depositions were carried out in the temperature range of 350-650 deg. C, yielding different microstructures ranging from amorphous to crystalline, monoclinic, films. The films were compared on the basis of growth rate, phase development, density, interface characteristics, and electrical properties. Some specific features of the pulsed injection technique are considered. For low deposition temperatures the growth rate for the amide precursor was significantly higher than for the mixed butoxide precursors. A thickness-dependent amorphous to crystalline phase transition temperature was found for all precursors. There is an increase of the film density along with the deposition temperature from values as low as 5 g/cm 3 at 350 deg. C to values close to the bulk value of 9.7 g/cm 3 at 550 deg. C. Crystallization is observed in the same temperature range for films of typically 10-20 nm thickness. However, annealing studies show that this density increase is not simply related to the crystallization of the films. Similar electrical properties could be observed for all precursors and the dielectric constant of the films reaches values similar to the best values reported for bulk crystalline HfO 2

  4. Thermodynamic assessment and the composition prediction of amorphous alloy in the Fe–B–Er alloy system

    International Nuclear Information System (INIS)

    Wang, S.L.; Han, J.J.; Wang, C.P.; Kou, S.Z.; Liu, X.J.

    2012-01-01

    Highlights: ► The thermodynamic parameters of each phase in the Fe–Er and B–Er binary systems were obtained. ► An agreement between the calculated results and experimental data was obtained in each binary system. ► The liquidus surface of Fe–B–Er system has been calculated by means of CALPHAD. ► The investigation of GFA in Fe-rich alloys in the context of Fe–B–Er liquidus surface proves the significance of calculated phase diagram in the composition design of Fe-based metallic glass. - Abstract: The phase diagrams and thermodynamic properties in the Fe–Er and B–Er binary systems have been assessed by using the CALPHAD (Calculation of Phase Diagrams) method on the basis of the experimental data including the thermodynamic properties and phase equilibria. The thermodynamic parameters of each phase in the Fe–Er and B–Er binary systems were obtained, and an agreement between the calculated results and experimental data was obtained in each binary system. The isothermal sections at different temperatures and liquidus surface in the Fe–B–Er system have been calculated based on the binary thermodynamic data assessed in the present work. In addition, by considering that the glass formation composition of amorphous alloy is closely relative to the eutectic point in corresponding phase diagram, the investigation of glass-forming ability (GFA) in Fe-rich alloys in the Fe–B–Er liquidus surface has also been implemented in this work. The experimental result indicates that the GFA of a certain alloy is intimately relative to its location in the phase diagram, which proves that the phase diagram is an efficient tool for the composition design of Fe-based amorphous alloy.

  5. Coercivity and induced magnetic anisotropy by stress and/or field annealing in Fe- and Co- based (Finemet-type) amorphous alloys

    International Nuclear Information System (INIS)

    Miguel, C.; Zhukov, A.; Val, J.J. del; Gonzalez, J.

    2005-01-01

    Uniaxial magnetic anisotropy has been induced in amorphous Fe 73.5 Cu 1 Nb 3 Si 15.5 B 7 (Fe-rich) and (Co 77 Si 13.5 B 9.5 ) 90 Fe 7 Nb 3 (Co-rich) ferromagnetic alloys by annealing under stress and/or magnetic field. Such anisotropy plays a crucial role on the magnetization process and, consequently, determine the future applications of these materials. The mechanisms involved on the origin of such induced magnetic anisotropy showed significant differences between Fe-rich and Co-rich amorphous alloys. This work provides a comparative study of the coercive field and induced magnetic anisotropy in Fe-rich and Co-rich (Finemet) amorphous alloys treated by stress and/or field

  6. The study of Zn–Co alloy coatings electrochemically deposited by pulse current

    Directory of Open Access Journals (Sweden)

    Tomić Milorad V.

    2012-01-01

    Full Text Available The electrochemical deposition by pulse current of Zn-Co alloy coatings on steel was examined, with the aim to find out whether pulse plating could produce alloys that could offer a better corrosion protection. The influence of on-time and the average current density on the cathodic current efficiency, coating morphology, surface roughness and corrosion stability in 3% NaCl was examined. At the same Ton/Toff ratio the current efficiency was insignificantly smaller for deposition at higher average current density. It was shown that, depending on the on-time, pulse plating could produce more homogenous alloy coatings with finer morphology, as compared to deposits obtained by direct current. The surface roughness was the greatest for Zn-Co alloy coatings deposited with direct current, as compared with alloy coatings deposited with pulse current, for both examined average current densities. It was also shown that Zn-Co alloy coatings deposited by pulse current could increase the corrosion stability of Zn-Co alloy coatings on steel. Namely, alloy coatings deposited with pulse current showed higher corrosion stability, as compared with alloy coatings deposited with direct current, for almost all examined cathodic times, Ton. Alloy coatings deposited at higher average current density showed greater corrosion stability as compared with coatings deposited by pulse current at smaller average current density. It was shown that deposits obtained with pulse current and cathodic time of 10 ms had the poorest corrosion stability, for both investigated average deposition current density. Among all investigated alloy coatings the highest corrosion stability was obtained for Zn-Co alloy coatings deposited with pulsed current at higher average current density (jav = 4 A dm-2.

  7. Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

    Science.gov (United States)

    Yang, Xu; Nitta, Shugo; Pristovsek, Markus; Liu, Yuhuai; Nagamatsu, Kentaro; Kushimoto, Maki; Honda, Yoshio; Amano, Hiroshi

    2018-05-01

    Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures.

  8. Titanium nitride deposition in titanium implant alloys produced by powder metallurgy

    International Nuclear Information System (INIS)

    Henriques, V.A.R.; Cairo, C.A.A.; Faria, J.; Lemos, T.G.; Galvani, E.T.

    2009-01-01

    Titanium nitride (TiN) is an extremely hard material, often used as a coating on titanium alloy, steel, carbide, and aluminum components to improve wear resistance. Electron Beam Physical Vapor Deposition (EB-PVD) is a form of deposition in which a target anode is bombarded with an electron beam given off by a charged tungsten filament under high vacuum, producing a thin film in a substrate. In this work are presented results of TiN deposition in targets and substrates of Ti (C.P.) and Ti- 13 Nb- 13 Zr obtained by powder metallurgy. Samples were produced by mixing of hydride metallic powders followed by uniaxial and cold isostatic pressing with subsequent densification by sintering between 900°C up to 1400 °C, in vacuum. The deposition was carried out under nitrogen atmosphere. Sintered samples were characterized for phase composition, microstructure and microhardness by X-ray diffraction, scanning electron microscopy and Vickers indentation, respectively. It was shown that the samples were sintered to high densities and presented homogeneous microstructure, with ideal characteristics for an adequate deposition and adherence. The film layer presented a continuous structure with 15μm. (author)

  9. Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

    International Nuclear Information System (INIS)

    Bolvardi, H.; Baben, M. to; Nahif, F.; Music, D.; Schnabel, V.; Shaha, K. P.; Mráz, S.; Schneider, J. M.; Bednarcik, J.; Michalikova, J.

    2015-01-01

    Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O 2 atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al 2 O 3 formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO 2 at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al 2 O 3 with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds

  10. Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bolvardi, H.; Baben, M. to; Nahif, F.; Music, D., E-mail: music@mch.rwth-aachen.de; Schnabel, V.; Shaha, K. P.; Mráz, S.; Schneider, J. M. [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Bednarcik, J.; Michalikova, J. [Deutsches Elektronen Synchrotron DESY, FS-PE group, Notkestrasse 85, D-22607 Hamburg (Germany)

    2015-01-14

    Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O{sub 2} atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al{sub 2}O{sub 3} formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO{sub 2} at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al{sub 2}O{sub 3} with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds.

  11. Effect of boron addition to the hard magnetic bulk Nd60Fe30Al10 amorphous alloy

    International Nuclear Information System (INIS)

    Kong, H.Z.; Li, Y.; Ding, J.

    2000-01-01

    A detailed study of the effect of boron addition to crystallinity, magnetic properties and thermal properties was carried out for alloys Nd 60-x Fe 30 Al 10 B x with x=0, 1, 3 and 5 produced by copper mold chill casting and melt-spinning. The cast rods of alloys Nd 60-x Fe 30 Al 10 B x were largely amorphous. Remanence up to 0.154 T and coercivity up to 355 kA/m were observed, which were higher than those of the bulk amorphous Nd 60 Fe 30 Al 10 rod of the same diameter. A step in hysteresis loop was observed for the hard magnetic cast rod and ribbon melt-spun at a low speed of 5 m/s of the alloys with boron addition. Consistent increase in the amplitude of the step and magnetic field (H) at which the step was observed as the boron content increased. A single magnetic phase with low coercivity was observed for fully amorphous ribbon melt-spun at high speed of 30 m/s. Full crystallization due to heat treatment resulted in transition of hard magnetic amorphous phase of Nd 55 Fe 30 Al 10 B 5 cast rod to paramagnetic crystalline phases. TEM results of the as-cast rods illustrated the existence of numerous minute Nd-crystallites in amorphous matrix

  12. Microstructure, soft magnetic properties and applications of amorphous Fe-Co-Si-B-Mo-P alloy

    Directory of Open Access Journals (Sweden)

    Mariusz Hasiak

    2018-05-01

    Full Text Available DC thermomagnetic properties of Fe51Co12Si16B8Mo5P8 amorphous alloy in the as-quenched and after annealing below crystallization temperature are investigated. They are related to deviations in the microstructure as revealed by Mössbauer spectrometry. Study of AC magnetic properties, i.e. hysteresis loops, relative permeability and core losses versus maximum induction was aimed at obtaining optimal initial parameters for simulation process of a resonant transformer for a rail power supply converter. The results obtained from numerical analyses including core losses, winding losses, core mass, and dimensions were compared with the same parameters calculated for Fe-Si alloy and ferrite. Moreover, Steinmetz coefficients were also calculated for the as-quenched Fe51Co12Si16B8Mo5P8 amorphous alloy.

  13. Magnetic and other properties and sputtering behavior of Co-base amorphous alloy films

    International Nuclear Information System (INIS)

    Hayashi, K.; Hayakawa, M.; Ochiai, Y.; Matsuda, H.; Ishikawa, W.; Iwasaki, Y.; Aso, K.

    1987-01-01

    Magnetic and other properties of Co-base amorphous alloy films prepared by sputtering are investigated. A detailed magnetic phase diagram with saturation magnetic flux density, crystallization temperature, and zero-magnetostrictive line on Co-Ta-Zr amorphous alloys were obtained, and the technical knowhow to make a film with well-reproducible characteristics by widely changing the sputtering conditions was related with these physical properties. Especially on alloy sputtering, a phenomenological model for elucidating a composition difference between film and target is presented. After these studies, the film characteristics of B/sub s/ = 12 kG, T/sub x/ = 450 0 C, chemical bondλ/sub s/chemical bond -8 , H/sub c/<10 mOe, and permeabilities of μ(1 MHz) = 7000, μ(100 MHz) = 2000 for the single film of 2 μm in thickness and of μ(1 MHz) = 4000, μ(100 MHz) = 800 for the insulator-sandwiched multilayered film of 10 μm are obtained, and these well-balanced values enable us to apply the materials for high-frequency recording head

  14. Thermal stability and glass-forming ability of amorphous Nd-Al-TM (TM=Fe, Co, Ni or Cu) alloys

    International Nuclear Information System (INIS)

    Inoue, A.; Zhang Tao

    1997-01-01

    Bulk amorphous alloys were prepared for Nd 70 Al 10 TM 20 and Nd 60 Al 10 TM 30 (TM=Fe or Co) alloys by copper mold casting. The maximum sample thickness for glass formation reaches 15 mm for the Nd-Al-Fe alloys and 5 mm for the Nd-Al-Co alloys. A significant difference in the phase transition upon heating is recognized between the Fe- and Co-containing alloys. No glass transition before crystallization is observed for the Nd-Al-Fe alloys, but the Nd-Al-Co alloys exhibit the glass transition. The ΔT x (=T x -T g ) and T g /T m are 40-55 K and 0.65-0.67, respectively, for the latter alloys. The absence of supercooled liquid for the former alloys is different from those for all bulk amorphous alloys reported up to date. The T x /T m and ΔT m (=T m -T x ) are 0.85-0.89 and 88-137 K, respectively, for the Nd-Al-Fe alloys and, hence, the large glass-forming ability is presumably due to the high T x /T m and small ΔT m values. (orig.)

  15. Electric charging/discharging characteristics of super capacitor, using de-alloying and anodic oxidized Ti-Ni-Si amorphous alloy ribbons.

    Science.gov (United States)

    Fukuhara, Mikio; Sugawara, Kazuyuki

    2014-01-01

    Charging/discharging behaviors of de-alloyed and anodic oxidized Ti-Ni-Si amorphous alloy ribbons were measured as a function of current between 10 pA and 100 mA, using galvanostatic charge/discharging method. In sharp contrast to conventional electric double layer capacitor (EDLC), discharging behaviors for voltage under constant currents of 1, 10 and 100 mA after 1.8 ks charging at 100 mA show parabolic decrease, demonstrating direct electric storage without solvents. The supercapacitors, devices that store electric charge on their amorphous TiO2-x surfaces that contain many 70-nm sized cavities, show the Ragone plot which locates at lower energy density region near the 2nd cells, and RC constant of 800 s (at 1 mHz), which is 157,000 times larger than that (5 ms) in EDLC.

  16. High-quality graphene grown on polycrystalline PtRh{sub 20} alloy foils by low pressure chemical vapor deposition and its electrical transport properties

    Energy Technology Data Exchange (ETDEWEB)

    Yang, He; Shen, Chengmin, E-mail: cmshen@iphy.ac.cn; Tian, Yuan; Bao, Lihong; Chen, Peng; Yang, Rong; Yang, Tianzhong; Li, Junjie; Gu, Changzhi; Gao, Hong-Jun [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2016-02-08

    High-quality continuous uniform monolayer graphene was grown on polycrystalline PtRh{sub 20} alloy foils by low pressure chemical vapor deposition. The morphology of graphene was investigated by Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. Analysis results confirm that high quality single-layer graphene was fabricated on PtRh{sub 20} foil at 1050 °C using a lower flux of methane under low pressure. Graphene films were transferred onto the SiO{sub 2}/Si substrate by the bubbling transfer method. The mobility of a test field effect transistor made of the graphene grown on PtRh{sub 20} was measured and reckoned at room temperature, showing that the carrier mobility was about 4000 cm{sup 2} V{sup −1} s{sup −1}. The results indicate that desired quality of single-layer graphene grown on PtRh{sub 20} foils can be obtained by tuning reaction conditions.

  17. Glow discharge-deposited amorphous silicon films for low-cost solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Grabmaier, J G; Plaettner, R D; Stetter, W [Siemens A.G., Muenchen (Germany, F.R.). Forschungslaboratorien

    1980-01-01

    Due to their high absorption constant, glow discharge-deposited amorphous silicon (a-Si) films are of great interest for low-cost solar cells. Using SiH/sub 4/ and SiX/sub 4//H/sub 2/ (X = Cl or F) gas mixtures in an inductively or capacitively excited reactor, a-Si films with thicknesses up to several micrometers were deposited on substrates of glass, silica and silicon. The optical and electrical properties of the films were determined by measuring the IR absorption spectra, dark conductivity, photoconductivity, and photoluminescence. Hydrogen, chlorine, or fluorine were incorporated in the films in order to passivate dangling bonds in the amorphous network.

  18. Molecular Models for DSMC Simulations of Metal Vapor Deposition

    OpenAIRE

    Venkattraman, A; Alexeenko, Alina A

    2010-01-01

    The direct simulation Monte Carlo (DSMC) method is applied here to model the electron‐beam (e‐beam) physical vapor deposition of copper thin films. A suitable molecular model for copper‐copper interactions have been determined based on comparisons with experiments for a 2D slit source. The model for atomic copper vapor is then used in axi‐symmetric DSMC simulations for analysis of a typical e‐beam metal deposition system with a cup crucible. The dimensional and non‐dimensional mass fluxes obt...

  19. Parametric Study of Amorphous High-Entropy Alloys formation from two New Perspectives: Atomic Radius Modification and Crystalline Structure of Alloying Elements

    Science.gov (United States)

    Hu, Q.; Guo, S.; Wang, J. M.; Yan, Y. H.; Chen, S. S.; Lu, D. P.; Liu, K. M.; Zou, J. Z.; Zeng, X. R.

    2017-01-01

    Chemical and topological parameters have been widely used for predicting the phase selection in high-entropy alloys (HEAs). Nevertheless, previous studies could be faulted due to the small number of available data points, the negligence of kinetic effects, and the insensitivity to small compositional changes. Here in this work, 92 TiZrHfM, TiZrHfMM, TiZrHfMMM (M = Fe, Cr, V, Nb, Al, Ag, Cu, Ni) HEAs were prepared by melt spinning, to build a reliable and sufficiently large material database to inspect the robustness of previously established parameters. Modification of atomic radii by considering the change of local electronic environment in alloys, was critically found out to be superior in distinguishing the formation of amorphous and crystalline alloys, when compared to using atomic radii of pure elements in topological parameters. Moreover, crystal structures of alloying element were found to play an important role in the amorphous phase formation, which was then attributed to how alloying hexagonal-close-packed elements and face-centered-cubic or body-centered-cubic elements can affect the mixing enthalpy. Findings from this work not only provide parametric studies for HEAs with new and important perspectives, but also reveal possibly a hidden connection among some important concepts in various fields.

  20. Effects of thermal annealing on the structural, mechanical, and tribological properties of hard fluorinated carbon films deposited by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Maia da Costa, M. E. H.; Baumvol, I. J. R.; Radke, C.; Jacobsohn, L. G.; Zamora, R. R. M.; Freire, F. L.

    2004-11-01

    Hard amorphous fluorinated carbon films (a-C:F) deposited by plasma enhanced chemical vapor deposition were annealed in vacuum for 30 min in the temperature range of 200-600 °C. The structural and compositional modifications were followed by several analytical techniques: Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Nanoidentation measurements and lateral force microscopy experiments were carried out in order to provide the film hardness and the friction coefficient, respectively. The internal stress and contact angle were also measured. RBS, ERDA, and XPS results indicate that both fluorine and hydrogen losses occur for annealing temperatures higher than 300 °C. Raman spectroscopy shows a progressive graphitization upon annealing, while the surface became slightly more hydrophobic as revealed by the increase of the contact angle. Following the surface wettability reduction, a decrease of the friction coefficient was observed. These results highlight the influence of the capillary condensation on the nanoscale friction. The film hardness and the internal stress are constant up to 300 °C and decrease for higher annealing temperatures, showing a direct correlation with the atomic density of the films. Since the thickness variation is negligible, the mass loss upon thermal treatment results in amorphous structures with a lower degree of cross-linking, explaining the deterioration of the mechanical properties of the a-C:F films.

  1. A simple fluxgate magnetometer using amorphous alloys

    International Nuclear Information System (INIS)

    Ghatak, S.K.; Mitra, A.

    1992-01-01

    A simple fluxgate magnetometer is developed using low magnetostrictive ferromagnetic amorphous alloy acting as a sensing element. It uses the fact that the magnetization of sensing element symmetrically magnetized by a sinusoidal field contains even harmonic components in presence of dc signal field H and the amplitude of the second harmonic component of magnetization is proportional to H. The sensitivity and linearity of the magnetometer with signal field are studied for parallel configuration and the field ranging from 10 nT to 10 μT can be measured. The functioning of the magnetometer is demonstrated by studying the shielding and flux-trapping phenomena in high-Tc superconductor. (orig.)

  2. Simulation and experimental analysis of nanoindentation and mechanical properties of amorphous NiAl alloys.

    Science.gov (United States)

    Wang, Chih-Hao; Fang, Te-Hua; Cheng, Po-Chien; Chiang, Chia-Chin; Chao, Kuan-Chi

    2015-06-01

    This paper used numerical and experimental methods to investigate the mechanical properties of amorphous NiAl alloys during the nanoindentation process. A simulation was performed using the many-body tight-binding potential method. Temperature, plastic deformation, elastic recovery, and hardness were evaluated. The experimental method was based on nanoindentation measurements, allowing a precise prediction of Young's modulus and hardness values for comparison with the simulation results. The indentation simulation results showed a significant increase of NiAl hardness and elastic recovery with increasing Ni content. Furthermore, the results showed that hardness and Young's modulus increase with increasing Ni content. The simulation results are in good agreement with the experimental results. Adhesion test of amorphous NiAl alloys at room temperature is also described in this study.

  3. A new Ti-Zr-Hf-Cu-Ni-Si-Sn bulk amorphous alloy with high glass-forming ability

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Y.J. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Shen, J. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)]. E-mail: junshen@hit.edu.cn; Sun, J.F. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Yu, X.B. [Lab of Energy Science and Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)]. E-mail: yuxuebin@hotmail.com

    2007-01-16

    The effect of Sn substitution for Cu on the glass-forming ability was investigated in Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 42.5-x}Ni{sub 7.5}Si{sub 1}Sn {sub x} (x = 0, 1, 3, 5, 7) alloys by using differential scanning calorimetry (DSC) and X-ray diffractometry. The alloy containing 5% Sn shows the highest glass-forming ability (GFA) among the Ti-Zr-Hf-Cu-Ni-Si-Sn system. Fully amorphous rod sample with diameters up to 6 mm could be successfully fabricated by the copper mold casting Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 37.5}Ni{sub 7.5}Si{sub 1}Sn{sub 5} alloy. The activation energies for glass transition and crystallization for Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 37.5}Ni{sub 7.5}Si{sub 1}Sn{sub 5} amorphous alloy are both larger than those values for the Sn-free alloy. The enhancement in GFA and thermal stability after the partial replacement of Cu by Sn may be contributed to the strong atomic bonding nature between Ti and Sn and the increasing of atomic packing density. The amorphous Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 37.5}Ni{sub 7.5}Si{sub 1}Sn{sub 5} alloy also possesses superior mechanical properties.

  4. Processing and characterization of amorphous magnesium based alloy for application in biomedical implants

    Directory of Open Access Journals (Sweden)

    Telma Blanco Matias

    2014-07-01

    Full Text Available Magnesium-based bulk metallic glasses are attractive due to their single-phase, chemically homogeneous alloy system and the absence of second-phase, which could impair the mechanical properties and corrosion resistance. However, one of the unsolved problems for the manufacturability and the applications of bulk metallic glasses is that their glass-forming ability is very sensitive to the preparation techniques and impurity of components since oxygen in the environment would markedly deteriorate the glass-forming ability. Therefore, the aim of this study was to establish proper processing conditions to obtain a magnesium-based amorphous ternary alloy and its characterization. The final composition was prepared using two binary master alloys by melting in an induction furnace. Carbon steel crucible was used in argon atmosphere with and without addition of SF6 gas in order to minimize the oxygen contamination. The microstructure, amorphous nature, thermal properties and chemical analysis of samples were investigated by scanning electron microscopy (SEM, X-ray diffraction (XRD, differential scanning calorimetry (DSC and inductively coupled plasma emission spectrometry, respectively. The oxygen content of the as-cast samples was chemically analyzed by using carrier gas hot extraction (O/N Analyzer TC-436/LECO and was kept bellow 25 ppm (without SF6 and 10 ppm (with SF6. Bulk samples were produced by rapid cooling in a cooper mold until 1.5 mm thickness, with amorphous structures being observed up to 2.5 mm.

  5. Short-range order in ab initio computer generated amorphous and liquid Cu–Zr alloys: A new approach

    International Nuclear Information System (INIS)

    Galván-Colín, Jonathan; Valladares, Ariel A.; Valladares, Renela M.; Valladares, Alexander

    2015-01-01

    Using ab initio molecular dynamics and a new approach based on the undermelt-quench method we generated amorphous and liquid samples of Cu x Zr 100−x (x=64, 50, 36) alloys. We characterized the topology of our resulting structures by means of the pair distribution function and the bond-angle distribution; a coordination number distribution was also calculated. Our results for both amorphous and liquids agree well with experiment. Dependence of short-range order with the concentration is reported. We found that icosahedron-like geometry plays a major role whenever the alloys are Cu-rich or Zr-rich disregarding if the samples are amorphous or liquid. The validation of these results, in turn would let us calculate other properties so far disregarded in the literature

  6. Nano-Crystalline Diamond Films with Pineapple-Like Morphology Grown by the DC Arcjet vapor Deposition Method

    Science.gov (United States)

    Li, Bin; Zhang, Qin-Jian; Shi, Yan-Chao; Li, Jia-Jun; Li, Hong; Lu, Fan-Xiu; Chen, Guang-Chao

    2014-08-01

    A nano-crystlline diamond film is grown by the dc arcjet chemical vapor deposition method. The film is characterized by scanning electron microscopy, high-resolution transmission electron microscopy (HRTEM), x-ray diffraction (XRD) and Raman spectra, respectively. The nanocrystalline grains are averagely with 80 nm in the size measured by XRD, and further proven by Raman and HRTEM. The observed novel morphology of the growth surface, pineapple-like morphology, is constructed by cubo-octahedral growth zones with a smooth faceted top surface and coarse side surfaces. The as-grown film possesses (100) dominant surface containing a little amorphous sp2 component, which is far different from the nano-crystalline film with the usual cauliflower-like morphology.

  7. Improvement in high-voltage and high rate cycling performance of nickel-rich layered cathode materials via facile chemical vapor deposition with methane

    International Nuclear Information System (INIS)

    Hyuk Son, In; Park, Kwangjin; Hwan Park, Jong

    2017-01-01

    Nickel-rich layered-oxide materials are considered promising candidates for application as cathode material in high-energy lithium ion batteries. However, their cycling performance at high voltages and rate conditions require further improvement for the purpose of commercialization. Here, we report on the facile surface modification of nickel-rich layered oxide by chemical vapor deposition with methane which yields a conductive and protective artificial solid electrolyte interphase layer consisting of amorphous carbon, alkyl lithium carbonate, and lithium carbonate. We examine the mechanism of the protective layer formation and structural deformation of the nickel-rich layered oxide during chemical vapor deposition with methane. Via optimizing the reaction conditions, we improve the electrical conductivity as well as the interfacial stability of the nickel-rich layered oxide without inducing structural deformation. The surface-modified nickel-rich layered oxide exhibits an improved performance due to the resulting enhanced rate capability, high initial efficiency, and long cycle life at high voltage (>4.5 V).

  8. In vitro metal ion release and biocompatibility of amorphous Mg{sub 67}Zn{sub 28}Ca{sub 5} alloy with/without gelatin coating

    Energy Technology Data Exchange (ETDEWEB)

    Chan, W.Y., E-mail: chan.wing.yue@sgh.com.sg [School of Mechanical and Aerospace Engineering, Nanyang Technological University (Singapore); Department of Plastic, Reconstructive and Aesthetic Surgery, Singapore General Hospital (Singapore); Chian, K.S.; Tan, M.J. [School of Mechanical and Aerospace Engineering, Nanyang Technological University (Singapore)

    2013-12-01

    Amorphous zinc-rich Mg–Zn–Ca alloys have exhibited good tissue compatibility and low hydrogen evolution in vivo. However, suboptimal cell–surface interaction on magnesium alloy surface observed in vitro could lead to reduced integration with host tissue for regenerative purpose. This study aims to improve cell–surface interaction of amorphous Mg{sub 67}Zn{sub 28}Ca{sub 5} alloy by coating a gelatin layer by electrospinning. Coated/uncoated alloys were immersed and extracted for 3 days under different CO{sub 2}. The immersion results showed that pH and metal ion release in the alloy extracts were affected by gelatin coating and CO{sub 2}, suggesting their roles in alloy biocorrosion and a mechanism has been proposed for the alloy–CO{sub 2} system with/without coating. Cytotoxicity results are evident that gelatin-coated alloy with 2-day crosslinking not only exhibited no indirect cytotoxicity, but also supported attachment of L929 and MG63 cell lines around/on the alloy with high viability. Therefore, amorphous Mg{sub 67}Zn{sub 28}Ca{sub 5} alloy coated with gelatin by electrospinning technique provides a useful method to improve alloy biocompatibility. - Highlights: • Electrospinning is a new method to coat amorphous Mg{sub 67}Zn{sub 28}Ca{sub 5} alloy with gelatin. • Gelatin-coated alloy has differential effect on pH and ion release at various CO{sub 2}. • L929 cell proliferation correlates with Mg{sup 2+} level in alloy extracts. • Biomimetic gelatin coating significantly improves cell–surface interaction.

  9. High-resolution transmission electron microscopy of grain-refining particles in amorphous aluminum alloys

    International Nuclear Information System (INIS)

    Schumacher, P.; Greer, A.L.

    1996-01-01

    The nucleation mechanism of Al-Ti-B grain refiners is studied in an Al-based amorphous alloy. The ability to limit growth of α-Al in the amorphous alloy permits the microscopical observation of nucleation events on boride particles. Earlier studies of this kind are extended by using high-resolution electron microscopy. This shows that the efficient nucleation α-Al depends on the TiB 2 particles being coated with a thin layer of Al 3 Ti, which can form only when there is some excess titanium in the melt. The aluminide layer, stabilized by adsorption effects, can be as little as a few monolayers thick, and is coherent with the boride. The nature of this layer, and its importance for the nucleation mechanism are discussed. The fading of the grain refinement action is also considered

  10. Oxidation influence on crystallisation in iron-based amorphous alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gloriant, T.; Surinach, S.; Munoz, J.S.; Baro, M.D. [Universitat Autonoma de Barcelona (Spain). Dept. de Fisica; Inoue, A. [Tohoku Univ., Sendai (Japan). Inst. for Materials Research

    2001-07-01

    The partially crystalline iron-based nanophase composites elaborated by rapid solidification techniques are very attractive for their excellent soft magnetic properties and their potential for industrial applications. In these nanocomposite materials a control of both the structure (size, shape and distribution of the nanoparticles in the amorphous matrix) and the kinetic behaviour (nucleation and growth mechanism) is essential in order to obtain the best properties and to be able to produce them at the industrial scale. Our group has been working in this research area for a long time and the investigation presented here is the result of an international collaboration. This study deals with the effect of cobalt addition in Fe-Nb-B melt-spun amorphous alloys on the devitrification/crystallisation processes induced by thermal treatments and characterised by X-ray diffraction analysis (XRD), thermomagnetic analysis (TMG) and transmission electron microscopy observations (TEM). The transformation sequences, from the initial amorphous phase to the fully crystallised final state, were carried out using different annealing experiments (under vacuum and in air) and have revealed a strong influence of the environmental atmosphere during devitrification. It is shown that oxidation can greatly affect the crystallisation behaviour as a result of the high metastable state of the initial amorphous phase. The results and observations of this phenomenon will be presented. (orig.)

  11. Low-pressure chemical vapor deposition as a tool for deposition of thin film battery materials

    NARCIS (Netherlands)

    Oudenhoven, J.F.M.; Dongen, van T.; Niessen, R.A.H.; Croon, de M.H.J.M.; Notten, P.H.L.

    2009-01-01

    Low Pressure Chemical Vapor Deposition was utilized for the deposition of LiCoO2 cathode materials for all-solid-state thin-film micro-batteries. To obtain insight in the deposition process, the most important process parameters were optimized for the deposition of crystalline electrode films on

  12. Electron beam physical vapor deposition of thin ruby films for remote temperature sensing

    International Nuclear Information System (INIS)

    Li Wei; Coppens, Zachary J.; Greg Walker, D.; Valentine, Jason G.

    2013-01-01

    Thermographic phosphors (TGPs) possessing temperature-dependent photoluminescence properties have a wide range of uses in thermometry due to their remote access and large temperature sensitivity range. However, in most cases, phosphors are synthesized in powder form, which prevents their use in high resolution micro and nanoscale thermal microscopy. In the present study, we investigate the use of electron beam physical vapor deposition to fabricate thin films of chromium-doped aluminum oxide (Cr-Al 2 O 3 , ruby) thermographic phosphors. Although as-deposited films were amorphous and exhibited weak photoluminescence, the films regained the stoichiometry and α-Al 2 O 3 crystal structure of the combustion synthesized source powder after thermal annealing. As a consequence, the annealed films exhibit both strong photoluminescence and a temperature-dependent lifetime that decreases from 2.9 ms at 298 K to 2.1 ms at 370 K. Ruby films were also deposited on multiple substrates. To ensure a continuous film with smooth surface morphology and strong photoluminescence, we use a sapphire substrate, which is thermal expansion coefficient and lattice matched to the film. These thin ruby films can potentially be used as remote temperature sensors for probing the local temperatures of micro and nanoscale structures.

  13. Structural relaxation in an amorphous rapidly quenched cobalt-based alloy

    International Nuclear Information System (INIS)

    Fradin, V.; Grynszpan, R.I.; Alves, F.; Houzali, A.; Perron, J.C.

    1995-01-01

    An amorphous melt-spun Co-based alloy (Metglas 2705 MN) is investigated by Doppler Broadening and Positron Lifetime techniques in order to follow the microstructural changes yielded by isochronal annealings before crystallization. The results are correlated with those of Differential Scanning Calorimetry and Coercive Field measurements. The quenched empty spaces underlined by Lifetime measurements are less than one atomic volume in size and migrate without clustering in larger voids. Both Positron Annihilation and Coercive Field investigations suggest that the overall decrease of free volume related to structural relaxation in this amorphous material, proceeds mainly via compositional short-range ordering. These local chemical rearrangements which lead to a partial disorientation of the magnetic moments act as strong pinning points for Bloch Walls. (orig.)

  14. Ideal solution behaviour of glassy Cu–Ti, Zr, Hf alloys and properties of amorphous copper

    International Nuclear Information System (INIS)

    Ristić, R.; Cooper, J.R.; Zadro, K.; Pajić, D.; Ivkov, J.; Babić, E.

    2015-01-01

    Highlights: • Ideal solution behaviour (ISB) is established in all Cu–Ti, Zr, Hf glassy alloys. • ISB enables reliable estimates for various properties of amorphous Cu. • ISB also impacts glass forming ability in these and probably other similar alloys. - Abstract: A comprehensive study of selected properties of amorphous (a) Cu–TE alloys (TE = Ti, Zr and Hf) has been performed. Data for average atomic volumes of a-Cu–Hf, Ti alloys combined with literature data show that ideal solution behaviour (Vegard’s law) extends over the whole glass forming range (GFR) in all a-Cu–TE alloys. This enables one to obtain an insight into some properties and probable atomic arrangements for both, a-TEs (Ristić et al., 2010) and a-Cu by extrapolation of the data for alloys. Indeed the atomic volumes and other properties studied for all a-Cu–TE alloys extrapolate to the same values for a-Cu. Depending on the property, these values are either close to those of crystalline (c) Cu, or are close to those for liquid (L) Cu. In particular, the electronic transport properties of a-Cu seem close to those of L-Cu, whereas the static properties, such as the density of states, and Young’s modulus, converge to those of c-Cu. The possible impact of these results on our understanding of a-Cu–TE alloys, including glass forming ability, is discussed

  15. Helium ion damage in an amorphous Fe-Ni-Mo-B alloy

    International Nuclear Information System (INIS)

    Swijgenhoven, H. van; Stals, L.M.; Knuyt, G.

    1983-01-01

    Data are presented on helium gas bubble and helium blister formation for Metglas 2826MB during 5 keV He + -implantation in the temperature range 200K-600K and dose range 5.10 20 -10 22 He + /m 2 . It is concluded that amorphous alloys are less radiation resistant as has been thought earlier. (author)

  16. Co-sputtered amorphous Nb–Ta, Nb–Zr and Ta–Zr coatings for corrosion protection of cyclotron targets for [{sup 18}F] production

    Energy Technology Data Exchange (ETDEWEB)

    Skliarova, Hanna, E-mail: Hanna.Skliarova@lnl.infn.it [National Institute of Nuclear Physics, Legnaro National Laboratories, Viale dell’Università, 2, 35020 Legnaro, Padua (Italy); University of Ferrara, Ferrara (Italy); Azzolini, Oscar, E-mail: Oscar.Azzolini@lnl.infn.it [National Institute of Nuclear Physics, Legnaro National Laboratories, Viale dell’Università, 2, 35020 Legnaro, Padua (Italy); Johnson, Richard R., E-mail: richard.johnson@teambest.com [BEST Cyclotron Systems Inc., 8765 Ash Street Unit 7, Vancouver, BC V6P 6T3 (Canada); Palmieri, Vincenzo, E-mail: Vincenzo.Palmieri@lnl.infn.it [National Institute of Nuclear Physics, Legnaro National Laboratories, Viale dell’Università, 2, 35020 Legnaro, Padua (Italy); University of Padua, Padua (Italy)

    2015-08-05

    Highlights: • Nb–Ta, Nb–Zr and Ta–Zr alloy films were deposited by co-sputtering. • Co-sputtered Nb–Zr and Nb–Ta alloy coatings had crystalline microstructures. • Diffusion barrier efficiency of Nb–Zr and Nb–Ta decreased with the increase of Nb %. • Co-sputtered Ta–Zr films with 30–73 at.% Ta were amorphous. • Sputtered amorphous Ta–Zr films showed superior diffusion barrier efficiency. - Abstract: Protective corrosion resistant coatings serve for decreasing the amount of ionic contaminants from Havar® entrance foils of the targets for [{sup 18}F] production. The corrosion damage of coated entrance foils is caused mainly by the diffusion of highly reactive products of water radiolysis through the protective film toward Havar® substrate. Since amorphous metal alloys (metallic glasses) are well-known to perform a high corrosion resistance, the glass forming ability, microstructure and diffusion barrier efficiency of binary alloys containing chemically inert Nb, Ta, Zr were investigated. Nb–Ta, Nb–Zr and Ta–Zr films of different alloy composition and ∼1.5 μm thickness were co-deposited by magnetron sputtering. Diffusion barrier efficiency tests used reactive aluminum underlayer and protons of acid solution and gallium atoms at elevated temperature as diffusing particles. Though co-sputtered Nb–Ta and Nb–Zr alloy films of different contents were crystalline, Ta–Zr alloy was found to form dense amorphous microstructures in a range of composition with 30–73% atomic Ta. The diffusion barrier efficiency of Nb–Zr and Nb–Ta alloy coatings decreased with increase of Nb content. The diffusion barrier efficiency of sputtered Ta–Zr alloy coatings increased with the transition from nanocrystalline columnar microstructure to amorphous for coatings with 30–73 at.% Ta.

  17. Fabrication of thin-wall, freestanding inertial confinement fusion targets by chemical vapor deposition

    International Nuclear Information System (INIS)

    Carroll, D.W.; McCreary, W.J.

    1982-01-01

    To meet the requirements for plasma physics experiments in the inertial confinement fusion (ICF) program, chemical vapor deposition (CVD) in fluid beds was used to fabricate freestanding tungsten spheres and cylinders with wall thicknesses less than 5.0 μm. Molybdenum and molybdenum alloy (TZM) mandrels of the desired geometry were suspended in a carrier bed of dense microspheres contained in an induction-heated fluid-bed reactor. The mandrels were free to float randomly through the bed, and using the reaction WF 6 +3H 2 →/sub /KW +6HF, very fine-grained tungsten was deposited onto the surface at a rate and in a grain size determined by temperature, gas flow rate, system pressure, and duration of the reaction. After coating, a portion of each mandrel was exposed by hole drilling or grinding. The mandrel was then removed by acid leaching, leaving a freestanding tungsten shape. Experimental procedures, mandrel preparation, and results obtained are discussed

  18. Performance of single wire earth return transformers with amorphous alloy core in a rural electric energy distribution system

    Directory of Open Access Journals (Sweden)

    Benedito Antonio Luciano

    2012-10-01

    Full Text Available In this paper are presented some considerations about the performance of single wire earth return amorphous alloy core transformers in comparison with conventional silicon steel sheets cores transformers used in rural electric energy distribution network. It has been recognized that amorphous metal core transformers improve electrical power distribution efficiency by reducing transformer core losses. This reduction is due to some electromagnetic properties of the amorphous alloys such as: high magnetic permeability, high resistivity, and low coercivity. Experimental results obtained with some single-phase, 60 Hz, 5 kVA amorphous core transformers installed in a rural area electric distribution system in Northern Brazil have been confirming their superior performance in comparison to identical nominal rated transformers built with conventional silicon steel cores, particularly with regard to the excitation power and to the no-load losses.

  19. Thermal conductivity of amorphous Al2O3/TiO2 nanolaminates deposited by atomic layer deposition.

    Science.gov (United States)

    Ali, Saima; Juntunen, Taneli; Sintonen, Sakari; Ylivaara, Oili M E; Puurunen, Riikka L; Lipsanen, Harri; Tittonen, Ilkka; Hannula, Simo-Pekka

    2016-11-04

    The thermophysical properties of Al2O3/TiO2 nanolaminates deposited by atomic layer deposition (ALD) are studied as a function of bilayer thickness and relative TiO2 content (0%-100%) while the total nominal thickness of the nanolaminates was kept at 100 nm. Cross-plane thermal conductivity of the nanolaminates is measured at room temperature using the nanosecond transient thermoreflectance method. Based on the measurements, the nanolaminates have reduced thermal conductivity as compared to the pure amorphous thin films, suggesting that interfaces have a non-negligible effect on thermal transport in amorphous nanolaminates. For a fixed number of interfaces, we find that approximately equal material content of Al2O3 and TiO2 produces the lowest value of thermal conductivity. The thermal conductivity reduces with increasing interface density up to 0.4 nm(-1), above which the thermal conductivity is found to be constant. The value of thermal interface resistance approximated by the use of diffuse mismatch model was found to be 0.45 m(2) K GW(-1), and a comparative study employing this value supports the interpretation of non-negligible interface resistance affecting the overall thermal conductivity also in the amorphous limit. Finally, no clear trend in thermal conductivity values was found for nanolaminates grown at different deposition temperatures, suggesting that the temperature in the ALD process has a non-trivial while modest effect on the overall thermal conductivity in amorphous nanolaminates.

  20. Synthesis and Characterization of Carbon nanofibers on Co and Cu Catalysts by Chemical Vapor Deposition

    International Nuclear Information System (INIS)

    Park, Eunsil; Kim, Jongwon; Lee, Changseop

    2014-01-01

    This study reports on the synthesis of carbon nanofibers via chemical vapor deposition using Co and Cu as catalysts. In order to investigate the suitability of their catalytic activity for the growth of nanofibers, we prepared catalysts for the synthesis of carbon nanofibers with Cobalt nitrate and Copper nitrate, and found the optimum concentration of each respective catalyst. Then we made them react with Aluminum nitrate and Ammonium Molybdate to form precipitates. The precipitates were dried at a temperature of 110 .deg. C in order to be prepared into catalyst powder. The catalyst was sparsely and thinly spread on a quartz tube boat to grow carbon nanofibers via thermal chemical vapor deposition. The characteristics of the synthesized carbon nanofibers were analyzed through SEM, EDS, XRD, Raman, XPS, and TG/DTA, and the specific surface area was measured via BET. Consequently, the characteristics of the synthesized carbon nanofibers were greatly influenced by the concentration ratio of metal catalysts. In particular, uniform carbon nanofibers of 27 nm in diameter grew when the concentration ratio of Co and Cu was 6:4 at 700 .deg. C of calcination temperature; carbon nanofibers synthesized under such conditions showed the best crystallizability, compared to carbon nanofibers synthesized with metal catalysts under different concentration ratios, and revealed 1.26 high amorphicity as well as 292 m 2 g -1 high specific surface area

  1. Magnetic cluster mean-field description of spin glasses in amorphous La-Gd-Au alloys

    International Nuclear Information System (INIS)

    Poon, S.J.; Durand, J.

    1978-03-01

    Bulk magnetic properties of splat-cooled amorphous alloys of composition La/sub 80-x/Gd/sub x/Au 20 (0 less than or equal to x less than or equal to 80) were studied. Zero-field susceptibility, high-field magnetization (up to 75 kOe) and saturated remanence were measured between 1.8 and 290 0 K. Data were analyzed using a cluster mean-field approximation for the spin-glass and mictomagnetic alloys (x less than or equal to 56). Mean-field theories can account for the experimental freezing-temperatures of dilute spin-glasses in which the Ruderman-Kittel-Kasuya-Yosida interaction is dominant. For the dilute alloys, the role of amorphousness on the magnetic interactions is discussed. By extending the mean-field approximation, the concentrated spin-glasses are represented by rigid ferromagnetic clusters as individual spin-entities interacting via random forces. Scaling laws for the magnetization M and saturation remanent magnetization M/sub rs/ are obtained and presented graphically for the x less than or equal to 32 alloys in which M/x = g(H/x*, T/x), M/sub rs/(T)/x = M/sub rs/(0)/x/ exp (-α*T/x/sup p/) where x* is the concentration of clusters, α* is a constant, and p is the freezing-temperature exponent given by T/sub M/ infinity x/sup p/. It is found that p = 1 and 1.3 for the regions 4 less than or equal to x less than or equal to 40 respectively. An attempt is also made to account for the freezing temperatures of concentrated spin glasses. The strength of the interaction among clusters is determined from high-field magnetization measurements using the Larkin-Smith method modified for clusters. It is shown that for the x < 24 alloys, the size of the clusters can be correlated to the structural short-range order in the amorphous state. More concentrated alloys are marked by the emergence of cluster percolation

  2. Quantitative description of the magnetization curves of amorphous alloys of the series a-DyxGd1-xNi

    International Nuclear Information System (INIS)

    Barbara, B.; Filippi, J.; Amaral, V.S.

    1992-01-01

    The magnetization curves of the series of amorphous alloys Dy x Gd 1-x Ni measured between 1.5 and 4.2 K and up to 15 T, have been fitted to the zero kelvin analytical model of Chudnovsky. The results of these fits allow a detailed understanding of the magnetization curves of amorphous alloys with ferromagnetic interactions. In particular, the ratio D/J of the local anisotropy and exchange energies, and the magnetic and atomic correlation lengths, are accurately determined. (orig.)

  3. Amorphous metallic alloys for oxygen reduction reaction in a polymer electrolyte membrane fuel cell

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Huerta, R.; Guerra-Martinez, I.; Lopez, J.S. [Inst. Politecnico Nacional, ESIQIE, Mexico City (Mexico). Lab. de Electroquimica; Pierna, A.R. [Basque Country Univ., San Sebastian (Spain). Dept. of Chemical Engineering and Environment; Solorza-Feria, O. [Inst. Politenico Nacional, Centro de Investigacion y de Estudios Avanzados, Mexico City (Mexico). Dept. de Quimica

    2010-07-15

    Direct methanol fuel cells (DMFC) and polymer electrolyte membrane fuel cells (PEMFC) represent an important, environmentally clean energy source. This has motivated extensive research on the synthesis, characterization and evaluation of novel and stable oxygen reduction electrocatalysts for the direct four-electron transfer process to water formation. Studies have shown that amorphous alloyed compounds can be used as electrode materials in electrochemical energy conversion devices. Their use in PEMFCs can optimize the electrocatalyst loading in the membrane electrode assembly (MEA). In this study, amorphous metallic PtSn, PtRu and PtRuSn alloys were synthesized by mechanical milling and used as cathodes for the oxygen reduction reaction (ORR) in sulphuric acid and in a single PEM fuel cell. Two different powder morphologies were observed before and after the chemical activation in a hydrofluoric acid (HF) solution at 25 degrees C. The kinetics of the ORR on the amorphous catalysts were investigated. The study showed that the amorphous metallic PtSn electrocatalyst was the most active of the 3 electrodes for the cathodic reaction. Fuel cell experiments were conducted at various temperatures at 30 psi for hydrogen (H{sub 2}) and at 34 psi for oxygen (O{sub 2}). MEAs made of Nafion 115 and amorphous metallic PtSn dispersed on carbon powder in a PEMFC had a power density of 156 mW per cm{sup 2} at 0.43V and 80 degrees C. 12 refs., 1 tab., 5 figs.

  4. Achievement report for fiscal 1984 on Sunshine Program-entrusted research and development. Research and development of photovoltaic power system (Research and development of amorphous solar cells - Research on defect density in amorphous silicon); 1984 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu (amorphous silicon no kekkan mitsudo no kenkyu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1985-03-01

    For the development of high-efficiency, large-area, long-life, and low-cost solar cells, research is conducted on new methods of film formation and defect evaluation. Concerning the kinetics of Si thin film, a radical beam deposition method is proposed as a new low-temperature thin film growth method. Using the new method, a {mu}c-Si film is manufactured, through only a purely radical substrate surface reaction of chemically active, electrically neutral excited species. In research on the amorphous semiconductor superlattice, a new study is conducted on a multilayer, cyclic-structure superlattice consisting of thin films of a-Si:H and a-Si{sub 1-x}N{sub x}:H. In the research on an a-Si:H film formed by the direct photo-CVD (chemical vapor deposition) of disilane, the unit is improved and B and P are successfully doped by means of decompressed photo-CVD. In the evaluation of new materials for solar cells, research is conducted on the after-annealing characteristics of a-Si:H grown at a high speed, electrical characteristics of post-hydrogenated low boron-doped CVD a-Si, and microcrystalline SiGe alloys made by the spattering plasma CVD method. (NEDO)

  5. Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition

    International Nuclear Information System (INIS)

    Iqbal, M. Z.; Kumar Singh, Arun; Iqbal, M. W.; Seo, Sunae; Eom, Jonghwa

    2012-01-01

    We have grown graphene by chemical vapor deposition (CVD) and transferred it onto Si/SiO 2 substrates to make tens of micron scale devices for Raman spectroscopy study. The effect of electron beam (e-beam) irradiation of various doses (600 to 12 000 μC/cm 2 ) on CVD grown graphene has been examined by using Raman spectroscopy. It is found that the radiation exposures result in the appearance of the strong disorder D band attributed the damage to the lattice. The evolution of peak frequencies, intensities, and widths of the main Raman bands of CVD graphene is analyzed as a function of defect created by e-beam irradiation. Especially, the D and G peak evolution with increasing radiation dose follows the amorphization trajectory, which suggests transformation of graphene to the nanocrystalline and then to amorphous form. We have also estimated the strain induced by e-beam irradiation in CVD graphene. These results obtained for CVD graphene are in line with previous findings reported for the mechanically exfoliated graphene [D. Teweldebrhan and A. A. Balandin, Appl. Phys. Lett. 94, 013101 (2009)]. The results have important implications for CVD graphene characterization and device fabrication, which rely on the electron microscopy.

  6. Structural studies of amorphous Mo-Ge alloys using synchrotron radiation

    International Nuclear Information System (INIS)

    Kortright, J.B.

    1984-06-01

    Structural changes in sputtered amorphous Mo-Ge alloy films with composition varying from a-Ge to about 70 at. % Mo have been studied with several x-ray techniques. Results of individual techniques are presented and discussed in separate chapters. The complementary nature of information obtained from EXAFS and scattering for these materials is discussed in a separate chapter. A concluding chapter summarizes the results and structural changes with composition

  7. Development of an ion-beam sputtering system for depositing thin films and multilayers of alloys and compounds

    International Nuclear Information System (INIS)

    Gupta, Mukul; Gupta, Ajay; Phase, D.M.; Chaudhari, S.M.; Dasannacharya, B.A.

    2002-01-01

    An ion-beam sputtering (IBS) system has been designed and developed for preparing thin films and multilayers of various elements, alloys and compounds. The ion source used is a 3 cm diameter, hot-cathode Kaufman type 1.5 kV ion source. The system has been successfully tested with the deposition of various materials, and the deposition parameters were optimised for achieving good quality of thin films and multilayers. A systematic illustration of the versatility of the system to produce a variety of structures is done by depositing thin film of pure iron, an alloy film of Fe-Zr, a compound thin film of FeN, a multilayer of Fe-Ag and an isotopic multilayer of 57 FeZr/FeZr. Microstructural measurements on these films using X-ray and neutron reflectivity, atomic force microscopy (AFM), and X-ray diffraction are presented and discussed to reveal the quality of the microstructures obtained with the system. It is found that in general, the surface roughnesses of the film deposited by IBS are significantly smaller as compared to those for films deposited by e-beam evaporation. Further, the grain size of the IBS crystalline films is significantly refined as compared to the films deposited by e-beam evaporation. Grain refinement may be one of the reasons for reduced surface roughness. In the case of amorphous films, the roughness of the films does not increase appreciably beyond that of the substrate even after depositing thicknesses of several hundred angstroms

  8. Understanding the chemical vapor deposition of diamond: recent progress

    International Nuclear Information System (INIS)

    Butler, J E; Mankelevich, Y A; Cheesman, A; Ma, Jie; Ashfold, M N R

    2009-01-01

    In this paper we review and provide an overview to the understanding of the chemical vapor deposition (CVD) of diamond materials with a particular focus on the commonly used microwave plasma-activated chemical vapor deposition (MPCVD). The major topics covered are experimental measurements in situ to diamond CVD reactors, and MPCVD in particular, coupled with models of the gas phase chemical and plasma kinetics to provide insight into the distribution of critical chemical species throughout the reactor, followed by a discussion of the surface chemical process involved in diamond growth.

  9. A possible mechanism of ultrafast amorphization in phase-change memory alloys: an ion slingshot from the crystalline to amorphous position

    International Nuclear Information System (INIS)

    Kolobov, A V; Mishchenko, A S; Fons, P; Yakubenya, S M; Tominaga, J

    2007-01-01

    We propose that the driving force of the ultrafast crystalline-to-amorphous transition in phase-change memory alloys is caused by strained bonds existing in the (metastable) crystalline phase. For the prototypical example of Ge 2 Sb 2 Te 5 , we demonstrate that upon breaking of the longer Ge-Te bond by photoexcitation, a Ge ion is shot from an octahedral crystalline to a tetrahedral amorphous position by the uncompensated force of strained short bonds. Subsequent lattice relaxation stabilizes the tetrahedral surroundings of the Ge atoms and ensures the long-term stability of the optically induced phase

  10. Effect of heating rates of crystallization behaviour of amorphous Fe/sub 83/01/B/sub 17/ alloy

    International Nuclear Information System (INIS)

    Ashfaq, A.; Shamim, A.

    1993-01-01

    The electric resistivity of amorphous Fe/sub 83/01/B/sub 17/ alloy has been measured to study its crystallization behaviour from room temperature to about 900 K at the constant heating rates of 40, 60 and 80 K/hr. The crystallization temperature was observed to increase with the increase of heating g rate. However amorphous to crystalline path of RT-curve between the maximum and the minimum decreases with heating rate. The Resistivity Temperature (RT) curves exhibit different steps which are shown to correspond to the phase change stages of the alloy. The slope of the rt-curve after the previous step increases with the rise in heating rate and finally passes through a board peak and then rises again. From the peak shift dta of first crystallization stage activation energy was calculated by applying various peak shift equations. The values so obtained were in good agreement with those obtained with DSC measurement for (FeM)/sub 83/01/B/sub 17/ amorphous alloys where M=Mo, Ni, Cr, and V. (author)

  11. Short-range order in ab initio computer generated amorphous and liquid Cu–Zr alloys: A new approach

    Energy Technology Data Exchange (ETDEWEB)

    Galván-Colín, Jonathan, E-mail: jgcolin@ciencias.unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, México, D.F. 04510, México (Mexico); Valladares, Ariel A., E-mail: valladar@unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, México, D.F. 04510, México (Mexico); Valladares, Renela M.; Valladares, Alexander [Facultad de Ciencias, Universidad Nacional Autónoma de México, Apartado Postal 70-542, México, D.F. 04510, México (Mexico)

    2015-10-15

    Using ab initio molecular dynamics and a new approach based on the undermelt-quench method we generated amorphous and liquid samples of Cu{sub x}Zr{sub 100−x} (x=64, 50, 36) alloys. We characterized the topology of our resulting structures by means of the pair distribution function and the bond-angle distribution; a coordination number distribution was also calculated. Our results for both amorphous and liquids agree well with experiment. Dependence of short-range order with the concentration is reported. We found that icosahedron-like geometry plays a major role whenever the alloys are Cu-rich or Zr-rich disregarding if the samples are amorphous or liquid. The validation of these results, in turn would let us calculate other properties so far disregarded in the literature.

  12. Microstructural and mechanical characterization of laser deposited advanced materials

    Science.gov (United States)

    Sistla, Harihar Rakshit

    Additive manufacturing in the form of laser deposition is a unique way to manufacture near net shape metallic components from advanced materials. Rapid solidification facilitates the extension of solid solubility, compositional flexibility and decrease in micro-segregation in the melt among other advantages. The current work investigates the employment of laser deposition to fabricate the following: 1. Functionally gradient materials: This allows grading dissimilar materials compositionally to tailor specific properties of both these materials into a single component. Specific compositions of the candidate materials (SS 316, Inconel 625 and Ti64) were blended and deposited to study the brittle intermetallics reported in these systems. 2. High entropy alloys: These are multi- component alloys with equiatomic compositions of 5 or more elements. The ratio of Al to Ni was decreased to observe the transition of solid solution from a BCC to an FCC crystal structure in the AlFeCoCrNi system. 3. Structurally amorphous alloys: Zr-based metallic glasses have been reported to have high glass forming ability. These alloys have been laser deposited so as to rapidly cool them from the melt into an amorphous state. Microstructural analysis and X-ray diffraction were used to study the phase formation, and hardness was measured to estimate the mechanical properties.

  13. Relaxation processes and structural transformations in amorphous Co-Fe-Si-B alloys

    International Nuclear Information System (INIS)

    Dus-Sitek, M.; Olszowski, Z.

    1994-01-01

    The thermostimulated electron emission (TSEE) method was applied for determination of relaxation and crystallization processes in amorphous alloys. By using the analogy of DTA-method, the activation energy of relaxation and crystallization processes has been determined from the measurements of changes of TSEE temperature maxima depending on the heating rate

  14. Investigation of structural relaxation, crystallization process and magnetic properties of the Fe-Ni-Si-B-C amorphous alloy

    International Nuclear Information System (INIS)

    Kalezic-Glisovic, A.; Novakovic, L.; Maricic, A.; Minic, D.; Mitrovic, N.

    2006-01-01

    The differential scanning calorimetry method was used for investigating the crystallization process of the Fe 89.8 Ni 1.5 Si 5.2 B 3 C 0.5 amorphous alloy. It was shown that the examined alloy crystallizes in three stages. The first crystallization stage occurs at 799 K, the second at 820 K and the third at 888 K. Temperature dependence of the magnetic susceptibility relative change was investigated by the modified Faraday method in the temperature region from room temperature up to 900 K. It has been established that the Curie temperature is about 700 K for amorphous state. The magnetic susceptibility increases by 30% after the first heating up to 710 K. During the second heating up to 840 K the alloy loses its ferromagnetic features in the temperature region from 710 to 750 K, upon which it again regains the same. After the second heating magnetic susceptibility decreases by 23% as compared to the amorphous starting value and by 53% as compared to the value before the second heating. The crystallized alloy maintains ferromagnetic features in the whole temperature region during the heating up to 900 K

  15. Investigation of structural relaxation, crystallization process and magnetic properties of the Fe-Ni-Si-B-C amorphous alloy

    Energy Technology Data Exchange (ETDEWEB)

    Kalezic-Glisovic, A. [Joint Laboratory for Advanced Materials of SASA, Section for Amorphous Systems, Technical Faculty Cacak, Svetog Save 65, 32000 Cacak (Serbia and Montenegro)]. E-mail: aleksandrakalezic@eunet.yu; Novakovic, L. [Faculty of Physics, Studentski trg 16, 11000 Belgrade (Serbia and Montenegro); Maricic, A. [Joint Laboratory for Advanced Materials of SASA, Section for Amorphous Systems, Technical Faculty Cacak, Svetog Save 65, 32000 Cacak (Serbia and Montenegro); Minic, D. [Faculty of Physical Chemistry, Studentski trg 16, 11000 Belgrade (Serbia and Montenegro); Mitrovic, N. [Joint Laboratory for Advanced Materials of SASA, Section for Amorphous Systems, Technical Faculty Cacak, Svetog Save 65, 32000 Cacak (Serbia and Montenegro)]. E-mail: nmitrov@tfc.kg.ac.yu

    2006-07-15

    The differential scanning calorimetry method was used for investigating the crystallization process of the Fe{sub 89.8}Ni{sub 1.5}Si{sub 5.2}B{sub 3}C{sub 0.5} amorphous alloy. It was shown that the examined alloy crystallizes in three stages. The first crystallization stage occurs at 799 K, the second at 820 K and the third at 888 K. Temperature dependence of the magnetic susceptibility relative change was investigated by the modified Faraday method in the temperature region from room temperature up to 900 K. It has been established that the Curie temperature is about 700 K for amorphous state. The magnetic susceptibility increases by 30% after the first heating up to 710 K. During the second heating up to 840 K the alloy loses its ferromagnetic features in the temperature region from 710 to 750 K, upon which it again regains the same. After the second heating magnetic susceptibility decreases by 23% as compared to the amorphous starting value and by 53% as compared to the value before the second heating. The crystallized alloy maintains ferromagnetic features in the whole temperature region during the heating up to 900 K.

  16. Final Report: Vapor Transport Deposition for Thin Film III-V Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Boettcher, Shannon [Univ. of Oregon, Eugene, OR (United States); Greenaway, Ann [Univ. of Oregon, Eugene, OR (United States); Boucher, Jason [Univ. of Oregon, Eugene, OR (United States); Aloni, Shaul [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

    2016-02-10

    Silicon, the dominant photovoltaic (PV) technology, is reaching its fundamental performance limits as a single absorber/junction technology. Higher efficiency devices are needed to reduce cost further because the balance of systems account for about two-thirds of the overall cost of the solar electricity. III-V semiconductors such as GaAs are used to make the highest-efficiency photovoltaic devices, but the costs of manufacture are much too high for non-concentrated terrestrial applications. The cost of III-V’s is driven by two factors: (1) metal-organic chemical vapor deposition (MOCVD), the dominant growth technology, employs expensive, toxic and pyrophoric gas-phase precursors, and (2) the growth substrates conventionally required for high-performance devices are monocrystalline III-V wafers. The primary goal of this project was to show that close-spaced vapor transport (CSVT), using water vapor as a transport agent, is a scalable deposition technology for growing low-cost epitaxial III-V photovoltaic devices. The secondary goal was to integrate those devices on Si substrates for high-efficiency tandem applications using interface nanopatterning to address the lattice mismatch. In the first task, we developed a CSVT process that used only safe solid-source powder precursors to grow epitaxial GaAs with controlled n and p doping and mobilities/lifetimes similar to that obtainable via MOCVD. Using photoelectrochemical characterization, we showed that the best material had near unity internal quantum efficiency for carrier collection and minority carrier diffusions lengths in of ~ 8 μm, suitable for PV devices with >25% efficiency. In the second task we developed the first pn junction photovoltaics using CSVT and showed unpassivated structures with open circuit photovoltages > 915 mV and internal quantum efficiencies >0.9. We also characterized morphological and electrical defects and identified routes to reduce those defects. In task three we grew epitaxial

  17. Zn–Mn alloy coatings from acidic chloride bath: Effect of deposition conditions on the Zn–Mn electrodeposition-morphological and structural characterization

    Energy Technology Data Exchange (ETDEWEB)

    Loukil, N., E-mail: nloukil87@gmail.com; Feki, M.

    2017-07-15

    Highlights: • Zn-Mn co-deposition from an additives-free chloride bath is possible. • Effect of Mn{sup 2+} ion concentration and current density on Zn-Mn electrodeposition and particularly Mn content into Zn-Mn deposits were investigated. • A dimensionless graph model was used to analyze the effect of Mn{sup 2+} ion concentration as well as the applied potential on Zn-Mn nucleation process. • Effect of current density on the morphology and structure of Zn-Mn alloys deposits. • A transition from crystalline to amorphous structure may occur in the Mn alloy electrodeposits at high current densities. - Abstract: Zn–Mn alloy electrodeposition on steel electrode in chloride bath was investigated using cyclic voltammetric, chronopotentiometric and chronoamperometric techniques. Cyclic voltammetries (CV) reveal a deep understanding of electrochemical behaviors of each metal Zn, Mn, proton discharge and Zn–Mn co-deposition. The electrochemical results show that with increasing Mn{sup 2+} ions concentration in the electrolytic bath, Mn{sup 2+} reduction occurs at lower over-potential leading to an enhancement of Mn content into the Zn–Mn deposits. A dimensionless graph model was used to analyze the effect of Mn{sup 2+} ions concentration on Zn–Mn nucleation process. It was found that the nucleation process is not extremely affected by Mn{sup 2+} concentration. Nevertheless, it significantly depends on the applied potential. Several parameters such as Mn{sup 2+} ions concentration, current density and stirring were investigated with regard to the Mn content into the final Zn–Mn coatings. It was found that the Mn content increases with increasing the applied current density j{sub imp} and Mn{sup 2+} ions concentration in the electrolytic bath. However, stirring of the solution decreases the Mn content in the Zn–Mn coatings. The phase structure and surface morphology of Zn–Mn deposits are characterized by means of X-ray diffraction analysis and Scanning

  18. Flash vaporization during earthquakes evidenced by gold deposits

    Science.gov (United States)

    Weatherley, Dion K.; Henley, Richard W.

    2013-04-01

    Much of the world's known gold has been derived from arrays of quartz veins. The veins formed during periods of mountain building that occurred as long as 3 billion years ago, and were deposited by very large volumes of water that flowed along deep, seismically active faults. The veins formed under fluctuating pressures during earthquakes, but the magnitude of the pressure fluctuations and their influence on mineral deposition is not known. Here we use a simple thermo-mechanical piston model to calculate the drop in fluid pressure experienced by a fluid-filled fault cavity during an earthquake. The geometry of the model is constrained using measurements of typical fault jogs, such as those preserved in the Revenge gold deposit in Western Australia, and other gold deposits around the world. We find that cavity expansion generates extreme reductions in pressure that cause the fluid that is trapped in the jog to expand to a very low-density vapour. Such flash vaporization of the fluid results in the rapid co-deposition of silica with a range of trace elements to form gold-enriched quartz veins. Flash vaporization continues as more fluid flows towards the newly expanded cavity, until the pressure in the cavity eventually recovers to ambient conditions. Multiple earthquakes progressively build economic-grade gold deposits.

  19. Coherent electron-correlation compatible with random atom stacking in amorphous Ce-Ru alloys

    International Nuclear Information System (INIS)

    Homma, Yoshiya; Sumiyama, Kenji; Yamauchi, Hiroshi; Suzuki, Kenji

    1997-01-01

    The amorphous Ce-Ru alloys produced by the sputtering technique show the following distinct behaviors at low temperatures. The electronic specific heat coefficient rapidly increases below 5 K for Ce-19 and 42 at.%Ru alloys with decreasing temperature, T, (a heavy fermion behavior). The electrical resistivity displays -logT dependence at T > 40 K (an incoherent or impurity Kondo effect). Is slightly decreases at T < 30 K for Ce-19 and 42 at.%Ru alloys (a coherent Kondo effect), while it abruptly decreases at 2.5 K for 82 at.%Ru (a superconducting phenomenon). These coherent states may originate from the strong mixing and correlation of 4f-electrons and conduction-electrons even in the random alloy system. (author)

  20. Controlling the resistivity gradient in chemical vapor deposition-deposited aluminum-doped zinc oxide

    NARCIS (Netherlands)

    Ponomarev, M. V.; Verheijen, M. A.; Keuning, W.; M. C. M. van de Sanden,; Creatore, M.

    2012-01-01

    Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO: Al layers by focusing on the control

  1. Solid solution and amorphous phase in Ti–Nb–Ta–Mn systems synthesized by mechanical alloying

    Energy Technology Data Exchange (ETDEWEB)

    Aguilar, C., E-mail: claudio.aguilar@usm.cl [Departamento de Ingeniería Metalúrgica y Materiales, Universidad Técnica Federico Santa María, Av. España 1680, Valparaíso (Chile); Guzman, P. [Departamento de Ingeniería Metalúrgica y Materiales, Universidad Técnica Federico Santa María, Av. España 1680, Valparaíso (Chile); Lascano, S. [Departamento de Ingeniería Mecánica, Universidad Técnica Federico Santa María, Av. España 1680, Valparaíso (Chile); Parra, C. [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaíso (Chile); Bejar, L. [Instituto de Investigaciones Metalúrgicas, Universidad Michoacana de San Nicolás de Hidalgo, Ciudad Universitaria, Morelia C.P. 58000, Michoacán (Mexico); Medina, A. [Facultad de Ingeniería Mecánica, Universidad Michoacana de San Nicolás de Hidalgo, Ciudad Universitaria, C.P. 58000, Michoacán (Mexico); Guzman, D. [Departamento de Metalurgia, Universidad de Atacama, Av. España 485, Copiapó (Chile)

    2016-06-15

    This work discusses the formation of Ti–30Nb–13Ta–xMn (x: 2, 4 and 6 wt%) solid solution by mechanical alloying using a shaker mill. A solid solution was formed after 15 h of milling and an amorphous phase was formed after 30 h of milling, according to X-ray diffraction results. Disappearance of strongest X-ray diffraction peaks of Nb, Ta and Mn indicated the formation of solid solution, while, X-ray diffraction patterns of powders milled for 30 h showed an amorphous hump with crystalline peaks in the angular range of 35–45° in 2θ. TEM image analysis showed the presence of nanocrystalline intermetallic compounds embedded in an amorphous matrix. Mn{sub 2}Ti, MnTi and NbTi{sub 4} intermetallic compounds were detected and revealed crystallites with size ranging from 3 to 20 nm. The Gibbs free energy for the formation of solid solution and amorphous phase of three ternary systems (Ti–Nb–Ta, Ti–Nb–Mn and Ti–Ta–Mn) was calculated using extended Miedema's model. Experimental and thermodynamic data confirmed that solid solution was first formed in the alloy with 6wt% Mn followed by the formation of an amorphous phase as milling time increases. The presence of Mn promoted the formation of amorphous phase because the atomic radius difference between Mn with Ti, Nb and Ta. - Highlights: • Thermodynamics analysis of extension of solid solution of the Ti–Nb–Ta–Mn system. • Formation of amorphous phase and intermetallic compounds were observed. • Nanocrystalline intermetallic compounds were formed with the sizes between 3 and 20 nm.

  2. Effect of Different Catalyst Deposition Technique on Aligned Multiwalled Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Mohamed Shuaib Mohamed Saheed

    2014-01-01

    Full Text Available The paper reported the investigation of the substrate preparation technique involving deposition of iron catalyst by electron beam evaporation and ferrocene vaporization in order to produce vertically aligned multiwalled carbon nanotubes array needed for fabrication of tailored devices. Prior to the growth at 700°C in ethylene, silicon dioxide coated silicon substrate was prepared by depositing alumina followed by iron using two different methods as described earlier. Characterization analysis revealed that aligned multiwalled carbon nanotubes array of 107.9 µm thickness grown by thermal chemical vapor deposition technique can only be achieved for the sample with iron deposited using ferrocene vaporization. The thick layer of partially oxidized iron film can prevent the deactivation of catalyst and thus is able to sustain the growth. It also increases the rate of permeation of the hydrocarbon gas into the catalyst particles and prevents agglomeration at the growth temperature. Combination of alumina-iron layer provides an efficient growth of high density multiwalled carbon nanotubes array with the steady growth rate of 3.6 µm per minute for the first 12 minutes and dropped by half after 40 minutes. Thicker and uniform iron catalyst film obtained from ferrocene vaporization is attributed to the multidirectional deposition of particles in the gaseous form.

  3. Structural and optical characterization of self-assembled Ge nanocrystal layers grown by plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Saeed, Saba; Buters, Frank; Dohnalova, Katerina; Wosinski, Lech; Gregorkiewicz, Tom

    2014-10-10

    We present a structural and optical study of solid-state dispersions of Ge nanocrystals prepared by plasma-enhanced chemical vapor deposition. Structural analysis shows the presence of nanocrystalline germanium inclusions embedded in an amorphous matrix of Si-rich SiO(2).Optical characterization reveals two prominent emission bands centered around 2.6 eV and 3.4 eV, and tunable by excitation energy. In addition, the lower energy band shows an excitation power-dependent blue shift of up to 0.3 eV. Decay dynamics of the observed emission contains fast (nanosecond) and slow (microseconds) components, indicating contributions of several relaxation channels. Based on these material characteristics, a possible microscopic origin of the individual emission bands is discussed.

  4. Comparative Study of Furnace and Flash Lamp Annealed Silicon Thin Films Grown by Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Maheshwar Shrestha

    2018-03-01

    Full Text Available Low-temperature growth of microcrystalline silicon (mc-Si is attractive for many optoelectronic device applications. This paper reports a detailed comparison of optical properties, microstructure, and morphology of amorphous silicon (a-Si thin films crystallized by furnace annealing and flash lamp annealing (FLA at temperatures below the softening point of glass substrate. The initial a-Si films were grown by plasma enhanced chemical vapor deposition (PECVD. Reflectance measurement indicated characteristic peak in the UV region ~280 nm for the furnace annealed (>550 °C and flash lamp annealed films, which provided evidence of crystallization. The film surface roughness increased with increasing the annealing temperature as well as after the flash lamp annealing. X-ray diffraction (XRD measurement indicated that the as-deposited samples were purely amorphous and after furnace crystallization, the crystallites tended to align in one single direction (202 with uniform size that increased with the annealing temperature. On the other hand, the flash lamp crystalized films had randomly oriented crystallites with different sizes. Raman spectroscopy showed the crystalline volume fraction of 23.5%, 47.3%, and 61.3% for the samples annealed at 550 °C, 650 °C, and with flash lamp, respectively. The flash lamp annealed film was better crystallized with rougher surface compared to furnace annealed ones.

  5. Atomic structure of intracellular amorphous calcium phosphate deposits.

    Science.gov (United States)

    Betts, F; Blumenthal, N C; Posner, A S; Becker, G L; Lehninger, A L

    1975-06-01

    The radial distribution function calculated from x-ray diffraction of mineralized cytoplasmic structures isolated from the hepatopancreas of the blue crab (Callinectes sapidus) is very similar to that previously found for synthetic amorphous calcium phosphate. Both types of mineral apparently have only short-range atomic order, represented as a neutral ion cluster of about 10 A in longest dimension, whose probable composition is expressed by the formula Ca9(PO4)6. The minor differences observed are attributed to the presence in the biological mineral of significant amounts of Mg-2+ and ATP. Synthetic amorphous calcium phosphate in contact with a solution containing an amount of ATP equivalent to that of the biological mineral failed to undergo conversion to the thermodynamically more stable hydroxyapatite. The amorphous calcium phosphate of the cytoplasmic mineral granules is similarly stable, and does not undergo conversion to hydroxyapatite, presumably owing to the presence of ATP and Mg-2+, known in inhibitors of the conversion process. The physiological implications of mineral deposits consisting of stabilized calcium phosphate ion clusters are discussed.

  6. Vibrational spectra and boson-like excitations in different amorphous forms of ice

    International Nuclear Information System (INIS)

    Kolesnikov, A.I.; Li, J.C.; Uffindell, C.H.

    1999-01-01

    Complete text of publication follows. Glasses are very interesting objects in the physics of condensed matter, with many universal properties, such as low-energy excitations (LEE) coexisting with the sound waves and giving an excess of vibrational modes with respect to the crystalline spectrum (the so called 'boson' peak) in Raman and inelastic neutron scattering (INS). Recently it was discovered that films of hydrogenated amorphous silicon do not show such LEE, whereas films of amorphous silicon do [1]. Also, the resonant absorption by two-level systems was observed for the high-density amorphous (hda) ice but not for the low-density amorphous (lda) ice in the far infrared spectra [2]. Thus, the nature of these near universal LEE becomes rather puzzling. This report presents the results of INS studies for hda and lda ice produced by high-pressure treatment and for vapor-deposited lda ice. Clear LEE were observed in the spectra for hda and deposited lda ice unlike their crystalline analogues. (author)

  7. Amorphization and evolution of magnetic properties during mechanical alloying of Co{sub 62}Nb{sub 6}Zr{sub 2}B{sub 30}: Dependence on starting boron microstructure

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, L.M.; Blázquez, J.S., E-mail: jsebas@us.es; Ipus, J.J.; Conde, A.

    2014-02-05

    Highlights: • Mechanical alloying of Co{sub 62}Nb{sub 6}Zr{sub 2}B{sub 30} leads to amorphous phase with B inclusions. • Using optimized amorphous B, amorphization occurs earlier. • B is more effectively introduced in the matrix using amorphous B. • Magnetoelasic contribution to effective magnetic anisotropy is negligible. -- Abstract: Co{sub 62}Nb{sub 6}Zr{sub 2}B{sub 30} composition was mechanically alloyed using three different types of boron powders in the starting mixture: crystalline β-B, commercial amorphous B and optimized amorphous B via ball milling. Using optimized amorphous B, amorphization process of the alloy is more efficient but milling to optimize amorphous B introduces some iron contamination. Boron inclusions (100–150 nm in size) remain even after long milling times. However, using amorphous boron reduces the fraction of boron distributed as inclusions to ∼40% of the total B. Thermal stability at the end of the milling process is affected by the initial boron microstructure. Coercivity is reduced a half using amorphous B instead of crystalline B in the starting mixture.

  8. Mechanical properties of fluorinated DLC and Si interlayer on a Ti biomedical alloy

    International Nuclear Information System (INIS)

    Chou, Chau-Chang; Wu, Yi-Yang; Lee, Jyh-Wei; Huang, Jen-Ching; Yeh, Chi-Hsiao

    2013-01-01

    Fluorinated amorphous diamond-like carbon (F-DLC) films were deposited on Ti6Al4V substrates by radio frequency plasma enhanced chemical vapor deposition (rf PECVD) technique using a mixture of methane (CH 4 ) and tetrafluoromethane (CF 4 ) gasses. A 100 nm Si interlayer was coated in advance by physical vapor deposition (PVD) process to improve the adhesion between F-DLC and Ti alloy. The structure and surface properties of F-DLC coatings, prepared by various fluorine flow ratios, were investigated by using X-ray diffraction spectroscopy, Raman spectroscopy, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, and scanning electron microscopy. The mechanical properties were evaluated by nano-indentation, and the adhesion, by micro-scratch. The results showed that a moderate incorporation of the fluorine content in the DLC films can still maintain acceptable mechanical properties, which, on the other hand, obtains remarkable benefits of blood compatibility and anti-corrosion. - Highlights: ► F-DLC’s sp2 carbon cluster increases with the precursors’ CF 4 /CH 4 ratio. ► F-DLC’s reduced elastic modulus and hardness decrease with the CF 4 /CH 4 ratio. ► F-DLC film’s adhesion strength degrades as the CF 4 /CH 4 ratio elevated. ► An F-DLC deposited Ti6Al4V produced by a smaller CF 4 /CH 4 ratio, 1-3, is suggested

  9. Quantitative description of the magnetization curves of amorphous alloys of the series a-Dy xGd 1-xNi

    Science.gov (United States)

    Barbara, B.; Amaral, V. S.; Filippi, J.

    1992-10-01

    The magnetization curves of the series of amorphous alloys Dy xGd 1- xNi measured between 1.5 and 4.2 K and up to 15 T, have been fitted to the zero kelvin analytical model of Chudnovsky [1]. The results of these fits allow a detailed understanding of the magnetization curves of amorphous alloys with ferromagnetic interactions. In particular, the ratio D/ J of the local anisotropy and exchange energies, and the magnetic and atomic correlation lengths, are accurately determined.

  10. Defects study of hydrogenated amorphous silicon samples and their relation with the substrate and deposition conditions

    International Nuclear Information System (INIS)

    Darwich, R.

    2009-07-01

    The goal of this work is to study the properties of the defects aiming to explore the types of defects and the effect of various deposition parameters such as substrate temperature, the kind of the substrate, gas pressure and deposition rate. Two kinds of samples have been used; The first one was a series of Schottky diodes, and the second one a series of solar cells (p-i-n junction) deposited on crystalline silicon or on corning glass substrates with different deposition parameters. The deposition parameters were chosen to obtain materials whose their structures varying from amorphous to microcrystalline silicon including polymorphous silicon. Our results show that the polymorphous silicon samples deposited at high deposition rates present the best photovoltaic properties in comparison with those deposited at low rates. Also we found that the defects concentration in high deposition rate samples is less at least by two orders than that obtained in low deposition rate polymorphous, microcrystalline and amorphous samples. This study shows also that there is no effect of the substrate, or the thin films of highly doped amorphous silicon deposited on the substrate, on the creation and properties of these defects. Finally, different experimental methods have been used; a comparison between their results has been presented. (author)

  11. Properties of Erbium Doped Hydrogenated Amorphous Carbon Layers Fabricated by Sputtering and Plasma Assisted Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    V. Prajzler

    2008-01-01

    Full Text Available We report about properties of carbon layers doped with Er3+ ions fabricated by Plasma Assisted Chemical Vapor Deposition (PACVD and by sputtering on silicon or glass substrates. The structure of the samples was characterized by X-ray diffraction and their composition was determined by Rutherford Backscattering Spectroscopy and Elastic Recoil Detection Analysis. The Absorbance spectrum was taken in the spectral range from 400 nm to 600 nm. Photoluminescence spectra were obtained using two types of Ar laser (λex=514.5 nm, lex=488 nm and also using a semiconductor laser (λex=980 nm. Samples fabricated by magnetron sputtering exhibited typical emission at 1530 nm when pumped at 514.5 nm. 

  12. Electromechanical properties of amorphous In-Zn-Sn-O transparent conducting film deposited at various substrate temperatures on polyimide substrate

    Science.gov (United States)

    Kim, Young Sung; Lee, Eun Kyung; Eun, Kyoungtae; Choa, Sung-Hoon

    2015-09-01

    The electromechanical properties of the amorphous In-Zn-Sn-O (IZTO) film deposited at various substrate temperatures were investigated by bending, stretching, twisting, and cyclic bending fatigue tests. Amorphous IZTO films were grown on a transparent polyimide substrate using a pulsed DC magnetron sputtering system at different substrate temperatures ranging from room temperature to 200 °C. A single oxide alloyed ceramic target (In2O3: 80 wt %, ZnO: 10 wt %, SnO2: 10 wt % composition) was used. The amorphous IZTO film deposited at 150 °C exhibited an optimized electrical resistivity of 5.8 × 10-4 Ω cm, optical transmittance of 87%, and figure of merit of 8.3 × 10-3 Ω-1. The outer bending tests showed that the critical bending radius decreased as substrate temperature increased. On the other hand, in the inner bending tests, the critical bending radius increased with an increase in substrate temperature. The differences in the bendability of IZTO films for the outer and inner bending tests could be attributed to the internal residual stress of the films. The uniaxial stretching tests also showed the effects of the internal stress on the mechanical flexibility of the film. The bending and stretching test results demonstrated that the IZTO film had higher bendability and stretchability than the conventional ITO film. The IZTO film could withstand 10,000 bending cycles at a bending radius of 10 mm. The effect of the surface roughness on the mechanical durability of all IZTO films was very small due to their very smooth surfaces.

  13. Thermal relaxation of magnetic clusters in amorphous Hf57Fe43 alloy

    International Nuclear Information System (INIS)

    Pajic, Damir; Zadro, Kreso; Ristic, Ramir; Zivkovic, Ivica; Skoko, Zeljko; Babic, Emil

    2007-01-01

    The magnetization processes in binary magnetic/non-magnetic amorphous alloy Hf 57 Fe 43 are investigated by the detailed measurement of magnetic hysteresis loops, temperature dependence of magnetization, relaxation of magnetization and magnetic ac susceptibility, including a nonlinear term. Blocking of magnetic moments at lower temperatures is accompanied by the slow relaxation of magnetization and magnetic hysteresis loops. All of the observed properties are explained by the superparamagnetic behaviour of the single domain magnetic clusters inside the non-magnetic host, their blocking by the anisotropy barriers and thermal fluctuation over the barriers accompanied by relaxation of magnetization. From magnetic viscosity analysis based on thermal relaxation over the anisotropy barriers it is found that magnetic clusters occupy the characteristic volume from 25 up to 200 nm 3 . The validity of the superparamagnetic model of Hf 57 Fe 43 is based on the concentration of iron in the Hf 100-x Fe x system that is just below the threshold for long range magnetic ordering. This work also throws more light on the magnetic behaviour of other amorphous alloys

  14. Theoretical study of the localization-delocalization transition in amorphous molybdenum-germanium alloys

    International Nuclear Information System (INIS)

    Ding, K.; Andersen, H.C.

    1987-01-01

    Electronic structure calculations were performed for amorphous germanium and amorphous alloys of molybdenum and germanium. The calculations used Harrison's universal linear-combination-of-atomic-orbitals parameters to generate one-electron Hamiltonians for structural configurations obtained from molecular-dynamics simulations. The density of states calculated for a model of a-Ge showed a distinct pseudogap, although with an appreciable density of states at the minimum. The states in the pseudogap are localized. As the concentration of Mo atoms increases, the pseudogap of the density of states is gradually filled up. The density of states at the Fermi energy calculated for our model of the alloys agrees quite well with that experimentally determined by Yoshizumi, Geballe, and co-workers. The localization index for the states at the Fermi energy is a decreasing function of Mo concentration in the range of 2--14 at. % Mo and the localization length is an increasing function of molybdenum concentration. These results are consistent with the experimental observation of an insulator-metal transition at about 10 at. % Mo

  15. Effects of thermal relaxation on an amorphous superconducting Zr--Rh alloy

    International Nuclear Information System (INIS)

    Drehman, A.J.; Johnson, W.L.

    1978-05-01

    The electronic and superconducting properties of an amorphous transition metal alloy are used to evaluate the effects of low temperature annealing. It is observed that the superconducting transition temperature and the electrical resistivity relax exponentially in time from their initial value to a final relaxed value. From this an activation energy for the relaxation process is derived and an explanation is suggested which involves internal stress

  16. Plasma Spray-Physical Vapor Deposition (PS-PVD) of Ceramics for Protective Coatings

    Science.gov (United States)

    Harder, Bryan J.; Zhu, Dongming

    2011-01-01

    In order to generate advanced multilayer thermal and environmental protection systems, a new deposition process is needed to bridge the gap between conventional plasma spray, which produces relatively thick coatings on the order of 125-250 microns, and conventional vapor phase processes such as electron beam physical vapor deposition (EB-PVD) which are limited by relatively slow deposition rates, high investment costs, and coating material vapor pressure requirements. The use of Plasma Spray - Physical Vapor Deposition (PS-PVD) processing fills this gap and allows thin (deposited and multilayer coatings of less than 100 microns to be generated with the flexibility to tailor microstructures by changing processing conditions. Coatings of yttria-stabilized zirconia (YSZ) were applied to NiCrAlY bond coated superalloy substrates using the PS-PVD coater at NASA Glenn Research Center. A design-of-experiments was used to examine the effects of process variables (Ar/He plasma gas ratio, the total plasma gas flow, and the torch current) on chamber pressure and torch power. Coating thickness, phase and microstructure were evaluated for each set of deposition conditions. Low chamber pressures and high power were shown to increase coating thickness and create columnar-like structures. Likewise, high chamber pressures and low power had lower growth rates, but resulted in flatter, more homogeneous layers

  17. Ultra-soft magnetic Co-Fe-B-Si-Nb amorphous alloys for high frequency power applications

    Science.gov (United States)

    Ackland, Karl; Masood, Ansar; Kulkarni, Santosh; Stamenov, Plamen

    2018-05-01

    With the continuous shrinkage of the footprint of inductors and transformers in modern power supplies, higher flux, while still low-loss metallic replacements of traditional ferrite materials are becoming an intriguing alternative. One candidate replacement strategy is based on amorphous CoFeBSi soft-magnetic alloys, in their metallic glass form. Here the structural and magnetic properties of two different families of CoFeBSi-based soft magnetic alloys, prepared by arc-melting and subsequent melt spinning (rapid quenching) are presented, targeting potential applications at effective frequencies of 100 kHz and beyond. The nominal alloy compositions are Co67Fe4B11Si16Mo2 representing commercial Vitrovac and Co72-xFexB28-y (where B includes non-magnetic elements such as Boron, Silicon etc. x varies between 4 and 5 % and y is varied from 0 to 2 %) denoted Alloy #1 and prepared as a possible higher performance alternative, i.e. lower power loss and lower coercivity, to commercial Vitrovac. Room temperature magnetization measurements of the arc-melted alloys reveal that compared to Vitrovac, Alloy #1 already presents a ten-fold decrease in coercivity, with Hc ˜ 1.4 Am-1 and highest figure of merit of (Ms/Hc > 96). Upon melt-spinning the alloys into thin (< 30 μm) ribbons, the alloys are essentially amorphous when analyzed by XRD. Magnetization measurements of the melt-spun ribbons demonstrate that Alloy #1 possesses a coercivity of just 2 Am-1, which represents a significant improvement compared to melt-spun ribbons of Vitrovac (17 Am-1). A set of prototype transformers of approximately 10 turns of Alloy #1 ribbon exhibits systematically Hc < 10 Am-1 at 100 kHz, without a noticeable decrease in coupled flux and saturation.

  18. Investigation of inhomogeneous deformation in band amorphous alloys at constant heating rate

    Science.gov (United States)

    Fedorov, Victor; Berezner, Arseniy; Pluzhnikova, Tatiana; Beskrovnyi, Anatolyi

    2017-11-01

    The present paper contains investigations of the creep process in the cobalt-based amorphous metallic alloy within the temperature range from 300 up to 1023 K. In all the curves of deformation there were observed jumps and dying oscillations. It is noted that the creep of the sample ribbons is unstable and results in the thinning of ribbons with tightening and crimping. There is suggested the mechanism of inhomogeneous deformation, which takes place in course of the process of creep under intermittent heating. For the evaluation of amorphism in the treated samples there have been carried out neutron-graphical and X-ray diffraction investigations, as well as thermal analysis.

  19. Directed Vapor Deposition: Low Vacuum Materials Processing Technology

    National Research Council Canada - National Science Library

    Groves, J. F; Mattausch, G; Morgner, H; Hass, D. D; Wadley, H. N

    2000-01-01

    Directed vapor deposition (DVD) is a recently developed electron beam-based evaporation technology designed to enhance the creation of high performance thick and thin film coatings on small area surfaces...

  20. Corrosion properties of aluminum based alloys deposited by ion beam assisted deposition

    International Nuclear Information System (INIS)

    Enders, B.; Krauss, S.; Wolf, G.K.

    1994-01-01

    The replacement of cadmium coatings by other protective measures is an important task because of the environmentally detrimental properties of cadmium. Therefore, aluminum and aluminum alloy coatings containing elements such as silicon or magnesium with more positive or negative positions in the galvanic series in relation to pure aluminum were deposited by ion beam assisted deposition onto glass and low carbon steel. Pure aluminum films were deposited onto low carbon steel in order to study the influence of the ion-to-atom arrival ratio and the angle of ion incidence on the corrosion properties. For examination of the pitting behavior as a function of the concentration of alloying element, quasipotentiostatic current-potential and potentiostatic current-time plots were measured in chlorine-containing acetate buffer. It is shown that these alloys can protect steel substrates under uniform and pitting corrosion conditions considerably better than pure aluminum coatings. ((orig.))

  1. Evidence of eutectic crystallization and transient nucleation in Al89La6Ni5 amorphous alloy

    International Nuclear Information System (INIS)

    Zhuang, Y. X.; Jiang, J. Z.; Lin, Z. G.; Mezouar, M.; Crichton, W.; Inoue, A.

    2001-01-01

    The phase evolution with the temperature and time in the process of crystallization of Al 89 La 6 Ni 5 amorphous alloy has been investigated by in situ high-temperature and high-pressure x-ray powder diffraction using synchrotron radiation. Two crystalline phases, fcc-Al and a metastable bcc-(AlNi) 11 La 3 -like phase, were identified after the first crystallization reaction, revealing a eutectic reaction instead of a primary reaction suggested in the literature. Time-dependent nucleation in the amorphous alloy is detected and the experimental data can be fitted by both the Zeldovich's and Kashchiev's transient nucleation models with transient nucleation times of 220 and 120 min, respectively. Copyright 2001 American Institute of Physics

  2. Effect of crystallization on corrosion behavior of Fe40Ni38B18Mo4 amorphous alloy in 3.5% sodium chloride solution

    DEFF Research Database (Denmark)

    Wu, Y.F.; Chiang, Wen-Chi; Wu, J.K.

    2008-01-01

    After the crystallization of F40Ni38B18Mo4 amorphous alloy by vacuum annealing, the corrosion resistance of its crystalline state shows inferior to its amorphous state due to the local cell action between Ni phase and (Fe, Ni, Mo)(23)B-6 phase in matrix.......After the crystallization of F40Ni38B18Mo4 amorphous alloy by vacuum annealing, the corrosion resistance of its crystalline state shows inferior to its amorphous state due to the local cell action between Ni phase and (Fe, Ni, Mo)(23)B-6 phase in matrix....

  3. Research on chemical vapor deposition processes for advanced ceramic coatings

    Science.gov (United States)

    Rosner, Daniel E.

    1993-01-01

    Our interdisciplinary background and fundamentally-oriented studies of the laws governing multi-component chemical vapor deposition (VD), particle deposition (PD), and their interactions, put the Yale University HTCRE Laboratory in a unique position to significantly advance the 'state-of-the-art' of chemical vapor deposition (CVD) R&D. With NASA-Lewis RC financial support, we initiated a program in March of 1988 that has led to the advances described in this report (Section 2) in predicting chemical vapor transport in high temperature systems relevant to the fabrication of refractory ceramic coatings for turbine engine components. This Final Report covers our principal results and activities for the total NASA grant of $190,000. over the 4.67 year period: 1 March 1988-1 November 1992. Since our methods and the technical details are contained in the publications listed (9 Abstracts are given as Appendices) our emphasis here is on broad conclusions/implications and administrative data, including personnel, talks, interactions with industry, and some known applications of our work.

  4. A Temperature Window for the Synthesis of Single-Walled Carbon Nanotubes by Catalytic Chemical Vapor Deposition of CH4over Mo2-Fe10/MgO Catalyst

    Directory of Open Access Journals (Sweden)

    Yu Ouyang

    2009-01-01

    Full Text Available Abstract A temperature window for the synthesis of single-walled carbon nanotubes by catalytic chemical vapor deposition of CH4over Mo2-Fe10/MgO catalyst has been studied by Raman spectroscopy. The results showed that when the temperature is lower than 750 °C, there were few SWCNTs formed, and when the temperature is higher than 950 °C, mass amorphous carbons were formed in the SWCNTs bundles due to the self-decomposition of CH4. The temperature window of SWCNTs efficient growth is between 800 and 950 °C, and the optimum growth temperature is about 900 °C. These results were supported by transmission electron microscope images of samples formed under different temperatures. The temperature window is important for large-scale production of SWCNTs by catalytic chemical vapor deposition method.

  5. Gas analysis during the chemical vapor deposition of carbon

    International Nuclear Information System (INIS)

    Lieberman, M.L.; Noles, G.T.

    1973-01-01

    Gas chromatographic analyses were performed during the chemical vapor deposition of carbon in both isothermal and thermal gradient systems. Such data offer insight into the gas phase processes which occur during deposition and the interrelations which exist between gas composition, deposition rate, and resultant structure of the deposit. The results support a carbon CVD model presented previously. The application of chromatographic analysis to research, development, and full-scale facilities is shown. (U.S.)

  6. Vaporization of liquid Pb-Li eutectic alloy from 1000K to 1200K - A high temperature mass spectrometric study

    Science.gov (United States)

    Jain, U.; Mukherjee, A.; Dey, G. K.

    2017-09-01

    Liquid lead-lithium eutectic will be used as a coolant in fusion reactor blanket loop. Vapor pressure of the eutectic is an important parameter to accurately predict its in-loop behavior. Past measurements of vapor pressure of the eutectic relied on indirect methods. In this paper, we report for the first time the in-situ vaporization behavior of the liquid alloy between 1042 and 1176 K by Knudsen effusion mass spectrometry (KEMS). It was seen that the vaporization occurred by independent evaporation of lead and lithium. No complex intermetallic vapor was seen in the mass spectra. The partial pressures and enthalpy of vaporization of Pb and Li were evaluated directly from the measured ion intensities formed from the equilibrium vapor over the alloy. The activity of Li over a temperature range of 1042-1176 K was found to be 4.8 × 10-5 to that of pure Li, indicating its very low activity in the alloy.

  7. Ga–Ge–Te amorphous thin films fabricated by pulsed laser deposition

    International Nuclear Information System (INIS)

    Němec, P.; Nazabal, V.; Dussauze, M.; Ma, H.-L.; Bouyrie, Y.; Zhang, X.-H.

    2013-01-01

    UV pulsed laser deposition was employed for the fabrication of amorphous Ga–Ge–Te thin films. The local structure of the bulk glasses as well as corresponding thin films was studied using Raman scattering spectroscopy; the main structural motifs were found to be [GeTe 4 ], eventually [GaTe 4 ] corner-sharing tetrahedra and disordered Te chains. Optical functions of the films (refractive index, extinction coefficient) were characterized by variable angle spectroscopic ellipsometry. Photostability experiments showed all Ga–Ge–Te laser deposited films to be stable against 1550 nm laser irradiation in an as-deposited state. In an annealed state, the most photostable composition seems to be Ga 10 Ge 15 Te 75 . This particular composition was further studied from the point of view of thermal stability and stability against ageing in as-deposited state. - Highlights: ► Pulsed laser deposition was used for fabrication of amorphous Ga–Ge–Te thin films. ► GeTe 4 , eventually GaTe 4 tetrahedra and disordered Te chains form the film structure. ► Optical functions of Ge–Ga–Te films were characterized by spectroscopic ellipsometry. ► All as-deposited Ga–Ge–Te thin films are stable against 1550 nm irradiation. ► In annealed state, the most photostable composition seems to be Ga 10 Ge 15 Te 75

  8. Vertically aligned Si nanocrystals embedded in amorphous Si matrix prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD)

    Energy Technology Data Exchange (ETDEWEB)

    Nogay, G. [Department of Physics, Middle East Technical University (METU), Ankara 06800 (Turkey); Center of Solar Energy Research and Application (GÜNAM), Middle East Technical University (METU), Ankara 06800 (Turkey); Saleh, Z.M., E-mail: zaki.saleh@aauj.edu [Center of Solar Energy Research and Application (GÜNAM), Middle East Technical University (METU), Ankara 06800 (Turkey); Department of Physics, Arab American University–Jenin (AAUJ), Jenin, Palestine (Country Unknown); Özkol, E. [Center of Solar Energy Research and Application (GÜNAM), Middle East Technical University (METU), Ankara 06800 (Turkey); Department of Chemical Engineering, Middle East Technical University (METU), Ankara 06800 (Turkey); Turan, R. [Department of Physics, Middle East Technical University (METU), Ankara 06800 (Turkey); Center of Solar Energy Research and Application (GÜNAM), Middle East Technical University (METU), Ankara 06800 (Turkey)

    2015-06-15

    Highlights: • Inductively-coupled plasma is used for nanostructured silicon at room temperature. • Low temperature deposition allows device processing on various substrates. • Deposition pressure is the most effective parameter in controlling nanostructure. • Films consist of quantum dots in a-Si matrix and exhibit columnar vertical growth. • Films are porous to oxygen infusion along columnar grain boundaries. - Abstract: Vertically-aligned nanostructured silicon films are deposited at room temperature on p-type silicon wafers and glass substrates by inductively-coupled, plasma-enhanced chemical vapor deposition (ICPCVD). The nanocrystalline phase is achieved by reducing pressure and increasing RF power. The crystalline volume fraction (X{sub c}) and the size of the nanocrystals increase with decreasing pressure at constant power. Columnar growth of nc-Si:H films is observed by high resolution transmission electron microscopy (HRTEM) and scanning electron microscopy (SEM). The films exhibit cauliflower-like structures with high porosity that leads to slow but uniform oxidation after exposure to air at room temperature. Films deposited at low pressures exhibit photoluminescence (PL) signals that may be deconvoluted into three distinct Gaussian components: 760–810, 920–935, and 990–1000 nm attributable to the quantum confinement and interface defect states. Hydrogen dilution is manifested in significant enhancement of the PL, but it has little effect on the nanocrystal size and X{sub c}.

  9. Leading research on super metal. 3. Amorphous and nanostructured metallic materials; Super metal no sendo kenkyu. 3. Kogata buzai

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-03-01

    Very fine structure control technique for amorphous and nanostructured metallic materials was reviewed to exceed the marginal performance of small metallic member materials. In Japan, high strength alloys and anticorrosion alloys are currently developed as an amorphous structure control technique, and ultra fine powder production and nano-compaction molding are studied for nanostructured materials. Fabrication of amorphous alloy wire materials and metal glass in USA are also introduced. Fabrication of metallic nanocrystals deposited within gas phase in Germany are attracting attention. The strength and abrasion resistance are remarkably enhanced by making nanostructured crystals and dispersing them. It may be most suitable to utilize amorphous and nanostructured metallic materials for earth-friendly materials having anticorrosion, and catalyst and biomaterial affinities, and also for magnetic materials. It is important for controlling micro-structures to clarify the formation mechanism of structures. For their processing techniques, the diversity and possibility are suggested, as to the condensation and solidification of gaseous and liquid phase metals, the molding and processing of very fine solid phase alloys, and the manufacturing members by heat treatment. 324 refs., 109 figs., 21 tabs.

  10. Mossbauer studies of amorphous Fe73.5Cu1Nb3Si13.5B9 alloy

    DEFF Research Database (Denmark)

    Jiang, Jianzhong

    1996-01-01

    This paper reports a Mossbauer study of amorphous Fe73.5Cu1Nb3Si13.5B9 alloy between 10 and 673 K. The Curie temperature Tc is found to be 620-+ 1 K. The temperature dependence of the reduced average hyperfine field can be explained on the basis of Handrich's model of amorphous ferromagnetism...

  11. Preparation and characterization of thick metastable sputter deposits

    International Nuclear Information System (INIS)

    Allen, R.P.; Dahlgren, S.D.; Merz, M.D.

    1975-01-01

    High-rate dc supported-discharge sputtering techniques were developed and used to prepare 0.1 mm to 5.0 mm-thick deposits of a variety of metastable materials including amorphous alloys representing more than 15 different rare-earth-transition metal systems and a wide range of compositions and deposition conditions. The ability to prepare thick, homogeneous deposits has made it possible for the first time to investigate the structure, properties, and annealing behavior of these unique sputtered alloys using neutron diffraction, ultrasonic, and other experimental techniques that are difficult or impractical for thin films. More importantly, these characterization studies show that the structure and properties of the massive sputter deposits are independent of thickness and can be reproduced from deposit to deposit. Other advantages and applications of this metastable materials preparation technique include the possibility of varying structure and properties by control of the deposition parameters and the ability to deposit even reactive alloys with a very low impurity content

  12. High-field magnetization behavior in random anisotropy amorphous Co-Er alloys

    Science.gov (United States)

    Lassri, H.; Driouch, L.; Krishnan, R.

    1994-05-01

    Amorphous Co1-xErx ribbons with x=55 and 65 were prepared by the melt-spinning technique. Magnetization measurements were carried out in the temperature range 4-100 K under high magnetic fields up to 20 T. Even at 20 T the saturation is not fully attained. Assuming that Co has no moment in the alloy with x=65 the Er moment is found to be 7.0μB which indicates a speromagnetic spin structure. The Co moment in the alloy with x=55 is then found to be 0.1μB, which is negligibly small. By analyzing the approach to saturation using Chudnovsky's theory we have extracted some fundamental parameters.

  13. Effect of ball mill treatment on kinetics of amorphous Ni78Si10B12 alloy crystallization

    International Nuclear Information System (INIS)

    Tomilin, I.A.; Mochalova, T.Yu.; Kaloshkin, S.D.; Kostyukovich, T.G.; Lopatina, E.A.

    1993-01-01

    The effect of the parameters of Ni 78 Si 10 B 12 alloy amorphous strip milling in a ball planetary mill on the stability of powder amorphous state, crytallization kinetics and dispersity is studied by the methods of differential scanning microcaloremetry and X-ray diffraction analysis. Energy intensity of milling conditions is assessed. An increase of input energy results in a decrease of activation energy of powder crystallization. Strip milling parameters which enable to avaintain the amorphous state of the material are determined

  14. Influence of composition and substrate bias on structure and inert-gas content of sputter-deposited Ni-La alloys

    International Nuclear Information System (INIS)

    Knoll, R.W.; McClanahan, E.D.

    1982-09-01

    X-ray diffraction patterns show that the disappearance of crystallinity in the deposit occurs gradually as the La content increases. At the same time, the deposit becomes saturated with Kr. Because there is no evidence of crystalline La metal or Ni-La intermetallic phase in the diffraction data, it may be concluded that each La atom creates a highly disordered (amorphous) region in the lattice, and that this region contains interstitial voids large enough to capture inert gas atoms. Saturation of the gas content with respect to La/Ni ratio might commence when these disordered regions begin to impinge upon one another. Finally, if inert gas atoms occupy interstitial voids within the deposit, then determination of the gas trapping characteristics of the material, using inert gas ions of different sizes, may be a means of studying the structure of glassy vapor-deposited materials. For example, the size distribution of the interstitial voids might be determined in this manner

  15. High Temperature Multilayer Environmental Barrier Coatings Deposited Via Plasma Spray-Physical Vapor Deposition

    Science.gov (United States)

    Harder, Bryan James; Zhu, Dongming; Schmitt, Michael P.; Wolfe, Douglas E.

    2014-01-01

    Si-based ceramic matrix composites (CMCs) require environmental barrier coatings (EBCs) in combustion environments to avoid rapid material loss. Candidate EBC materials have use temperatures only marginally above current technology, but the addition of a columnar oxide topcoat can substantially increase the durability. Plasma Spray-Physical Vapor Deposition (PS-PVD) allows application of these multilayer EBCs in a single process. The PS-PVD technique is a unique method that combines conventional thermal spray and vapor phase methods, allowing for tailoring of thin, dense layers or columnar microstructures by varying deposition conditions. Multilayer coatings were deposited on CMC specimens and assessed for durability under high heat flux and load. Coated samples with surface temperatures ranging from 2400-2700F and 10 ksi loads using the high heat flux laser rigs at NASA Glenn. Coating morphology was characterized in the as-sprayed condition and after thermomechanical loading using electron microscopy and the phase structure was tracked using X-ray diffraction.

  16. Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Boschker, Jos E.; Riechert, Henning; Calarco, Raffaella; Boniardi, Mattia; Redaelli, Andrea

    2015-01-01

    Here, we report on the electrical characterization of phase change memory cells containing a Ge 3 Sb 2 Te 6 (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80–150 nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles

  17. Progress Toward Meeting NIF Specifications for Vapor Deposited Polyimide Ablator Coatings

    International Nuclear Information System (INIS)

    Letts, Stephan A.; Anthamatten, Mitchell; Buckley, Steven R.; Fearon, Evelyn; Nissen, April E.H.; Cook, Robert C.

    2004-01-01

    We are developing an evaporative coating technique for deposition of thick polyimide (PI) ablator layers on ICF targets. The PI coating technique utilizes stoichiometrically controlled fluxes from two Knudsen cell evaporators containing a dianhydride and a diamine to deposit a polyamic acid (PAA) coating. Heating the PAA coating to 300 deg. C converts the PAA coating to a polyimide. Coated shells are rough due to particles on the substrate mandrels and from damage to the coating caused by the agitation used to achieve a uniform coating. We have developed a smoothing process that exposes an initially rough PAA coated shell to solvent vapor using gas levitation. We found that after smoothing the coatings developed a number of wide (low-mode) defects. We have identified two major contributors to low-mode roughness: surface hydrolysis, and deformation during drying/curing. By minimizing air exposure prior to vapor smoothing, avoiding excess solvent sorption during vapor smoothing, and using slow drying we are able to deposit and vapor smooth coatings 160 μm thick with a surface roughness less than 20 nm RMS

  18. Effects of deposition temperature on electrodeposition of zinc–nickel alloy coatings

    International Nuclear Information System (INIS)

    Qiao, Xiaoping; Li, Helin; Zhao, Wenzhen; Li, Dejun

    2013-01-01

    Highlights: ► Both normal and anomalous deposition can be realized by changing bath temperature. ► The Ni content in Zn–Ni alloy deposit increases sharply as temperature reach 60 °C. ► The abrupt change in coating composition is caused by the shift of cathodic potential. ► The deposition temperature has great effect on microstructure of Zn–Ni alloy deposit. -- Abstract: Zinc–nickel alloy coatings were electrodeposited on carbon steel substrates from the ammonium chloride bath at different temperatures. The composition, phase structure and morphology of these coatings were analyzed by energy dispersive spectrometer, X-ray diffractometer and scanning electron microscopy respectively. Chronopotentiometry and potentiostatic methods were also employed to analyze the possible causes of the composition and structure changes induced by deposition temperature. It has been shown that both normal and anomalous co-deposition of zinc and nickel could be realized by changing deposition temperature under galvanostatic conditions. The abrupt changes in the composition and phase structure of the zinc–nickel alloy coatings were observed when deposition temperature reached 60 °C. The sharply decrease of current efficiency for zinc–nickel co-deposition was also observed when deposition temperature is higher than 40 °C. Analysis of the partial current densities showed that the decrease of current efficiency with the rise of deposition temperature was due to the enhancement of the hydrogen evolution. It was also confirmed that the ennoblement of cathodic potential was the cause for the increase of nickel content in zinc–nickel alloy coatings as a result of deposition temperature rise. The good zinc–nickel alloy coatings with compact morphology and single γ phase could be obtained when the deposition temperature was fixed at 30–40 °C

  19. Structured nanocarbon on various metal foils by microwave plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Rius, G; Yoshimura, M

    2013-01-01

    We present a versatile process for the engineering of nanostructures made of crystalline carbon on metal foils. The single step process by microwave plasma-enhance chemical vapor deposition is demonstrated for various substrate materials, such as Ni or Cu. Either carbon nanotubes (CNT) or carbon nanowalls (CNW) are obtained under same growth conditions and without the need of additional catalyst. The use of spacer and insulator implies a certain control over the kind of allotropes that are obtained. High density and large surface area are morphological characteristics of the thus obtained C products. The possibility of application on many metals, and in the alloy composition, on as-delivered commercially available foils indicates that this strategy can be adapted to a bunch of specific applications, while the production of C nanostructures is of remarkable simplicity.

  20. Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

    Science.gov (United States)

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage.

  1. Design of multi materials combining crystalline and amorphous metallic alloys

    International Nuclear Information System (INIS)

    Volland, A.; Ragani, J.; Liu, Y.; Gravier, S.; Suéry, M.; Blandin, J.J.

    2012-01-01

    Highlights: ► Elaboration of multi materials associating metallic glasses and conventional crystalline alloys by co-deformation performed at temperatures close to the glass transition temperature of the metallic glasses. ► Elaboration of filamentary metal matrix composites with a core in metallic glass by co extrusion. ► Sandwich structures produced by co-pressing. ► Detection of atomic diffusion from the glass to the crystalline alloys during the processes. ► Good interfaces between the metallic glasses and the crystalline alloys, as confirmed by mechanical characterisation. - Abstract: Multi materials, associating zirconium based bulk metallic glasses and crystalline metallic alloys like magnesium alloys or copper are elaborated by co-deformation processing performed in the supercooled liquid regions (SLR) of the bulk metallic glasses. Two processes are investigated: co-extrusion and co-pressing. In the first case, filamentary composites with various designs can be produced whereas in the second case sandwich structures are obtained. The experimental window (temperature, time) in which processing can be carried out is directly related to the crystallisation resistance of the glass which requires getting information about the crystallisation conditions in the selected metallic glasses. Thermoforming windows are identified for the studied BMGs by thermal analysis and compression tests in their SLR. The mechanical properties of the produced multi materials are investigated thanks to specifically developed mechanical devices and the interfaces between the amorphous and the crystalline alloys are characterised.

  2. Use of process indices for simplification of the description of vapor deposition systems

    International Nuclear Information System (INIS)

    Kajikawa, Yuya; Noda, Suguru; Komiyama, Hiroshi

    2004-01-01

    Vapor deposition is a complex process, including gas-phase, surface, and solid-phase phenomena. Because of the complexity of chemical and physical processes occurring in vapor deposition processes, it is difficult to form a comprehensive, fundamental understanding of vapor deposition and to control such systems for obtaining desirable structures and performance. To overcome this difficulty, we present a method for simplifying the complex description of such systems. One simplification method is to separate complex systems into multiple elements, and determine which of these are important elements. We call this method abridgement. The abridgement method retains only the dominant processes in a description of the system, and discards the others. Abridgement can be achieved by using process indices to evaluate the relative importance of the elementary processes. We describe the formulation and use of these process indices through examples of the growth of continuous films, initial deposition processes, and the formation of the preferred orientation of polycrystalline films. In this paper, we propose a method for representing complex vapor deposition processes as a set of simpler processes

  3. Structural Relaxation in Fe78Nb2B20 Amorphous Alloy Studied by Moessbauer Spectroscopy

    International Nuclear Information System (INIS)

    Kansy, J.; Hanc, A.; Rasek, J.; Haneczok, G.; Pajak, L.; Stoklosa, Z.; Kwapulinski, P.

    2011-01-01

    It was shown that soft magnetic properties of Fe 78 Nb 2 B 20 amorphous alloy can be significantly improved by applying 1-h annealing at temperature 623 K (permeability increases even about 8 times). The Moessbauer Spectroscopy technique indicated that the optimized microstructure (corresponding to the maximum magnetic permeability) is free of iron nanograins and should be attributed to annealing out of free volume and a reduction of internal stresses i.e. to the relaxed amorphous phase. (authors)

  4. Stress corrosion cracking and dealloying of copper-gold alloy in iodine vapor

    International Nuclear Information System (INIS)

    Galvez, M.F.; Bianchi, G.L.; Galvele, J.R.

    1993-01-01

    The susceptibility to stress corrosion cracking of copper-gold alloy in iodine vapor was studied and the results were analyzed under the scope of the surface mobility stress corrosion cracking mechanism. The copper-gold alloy undergoes stress corrosion cracking in iodine. Copper iodide was responsible of that behavior. The copper-gold alloy shows two processes in parallel: stress corrosion cracking and dealloying. As was predicted by the surface mobility stress corrosion cracking mechanism, the increase in strain rate induces an increase in the crack propagation rate. (Author)

  5. Light-induced metastable structural changes in hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Fritzsche, H. [Univ. of Chicago, IL (United States)

    1996-09-01

    Light-induced defects (LID) in hydrogenated amorphous silicon (a-Si:H) and its alloys limit the ultimate efficiency of solar panels made with these materials. This paper reviews a variety of attempts to find the origin of and to eliminate the processes that give rise to LIDs. These attempts include novel deposition processes and the reduction of impurities. Material improvements achieved over the past decade are associated more with the material`s microstructure than with eliminating LIDs. We conclude that metastable LIDs are a natural by-product of structural changes which are generally associated with non-radiative electron-hole recombination in amorphous semiconductors.

  6. Superconductivity and NMR investigations of amorphous Be-Nb-Zr and Be-Mo-Zr alloys

    International Nuclear Information System (INIS)

    Goebbels, J.; Lueders, K.; Freyhardt, H.C.; Reichelt, J.

    1981-01-01

    9 Be NMR investigations and measurements of the superconducting properties and the resistivity are reported for amorphous Besub(32.5)Nbsub(x)Zrsub(67.5-x) and Besub(32.5)Mosub(x)Zrsub(67.5-x) alloys (x = 2.5; 5; 7). Line width analysis suggests an enlarged Nb concentration around the Be sites for the Be-Nb-Zr alloys. Comparing the two types of alloys the Knight shifts are of the same order of magnitude whereas the Tsub(c) and Bsub(c) 2 (0) values are slightly smaller than for the Nb alloys. For Be-Nb-Zr Tsub(c) and K increases with the Nb content. The results are discussed in connection with the density of states N(Esub(F)). (orig.)

  7. Controlled fluoridation of amorphous carbon films deposited at reactive plasma conditions

    Directory of Open Access Journals (Sweden)

    Yoffe Alexander

    2015-09-01

    Full Text Available A study of the correlations between plasma parameters, gas ratios, and deposited amorphous carbon film properties is presented. The injection of a C4F8/Ar/N2 mixture of gases was successfully used in an inductively coupled plasma system for the preparation of amorphous carbon films with different fluoride doping at room-temperature, using silicon as a substrate. This coating was formed at low-pressure and low-energy using an inductively coupled plasma process. A strong dependence between the ratios of gases during deposition and the composition of the substrate compounds was shown. The values of ratios between Ar (or Ar+N2 and C4F8 - 1:1 and between N2 and Ar - 1:2 in the N2/Ar/C4F8 mixture were found as the best for low fluoridated coatings. In addition, an example of improving the etch-passivation in the Bosch procedure was described. Scanning electron microscopy with energy dispersive spectroscopy options, X-ray diffraction, and X-ray reflectivity were used for quantitative analysis of the deposited films.

  8. Hydrogenated Amorphous Silicon Sensor Deposited on Integrated Circuit for Radiation Detection

    CERN Document Server

    Despeisse, M; Jarron, P; Kaplon, J; Moraes, D; Nardulli, A; Powolny, F; Wyrsch, N

    2008-01-01

    Radiation detectors based on the deposition of a 10 to 30 mum thick hydrogenated amorphous silicon (a-Si:H) sensor directly on top of integrated circuits have been developed. The performance of this detector technology has been assessed for the first time in the context of particle detectors. Three different circuits were designed in a quarter micron CMOS technology for these studies. The so-called TFA (Thin-Film on ASIC) detectors obtained after deposition of a-Si:H sensors on the developed circuits are presented. High internal electric fields (104 to 105 V/cm) can be built in the a-Si:H sensor and overcome the low mobility of electrons and holes in this amorphous material. However, the deposited sensor's leakage current at such fields turns out to be an important parameter which limits the performance of a TFA detector. Its detailed study is presented as well as the detector's pixel segmentation. Signal induction by generated free carrier motion in the a-Si:H sensor has been characterized using a 660 nm pul...

  9. Amorphous Cu-Ag films with high stability

    International Nuclear Information System (INIS)

    Reda, I.M.; Hafner, J.; Pongratz, P.; Wagendristel, A.; Bangert, H.; Bhat, P.K.

    1982-06-01

    Films produced by quenching Cu-Ag vapour onto cooled substrates at liquid nitrogen temperature have been investigated using electron microscopy, electron diffraction and electrical resistivity measurements. In the composition range from 30 to 70 at% Cu the as quenched films are amorphous, and within the range of 35 to 63 at% Cu the amorphous phase is stable above room temperature with a maximum crystallization temperature Tsub(c)=381 K at 47.5 at% Cu. Crystallization results in the formation of a supersaturated fcc solid solution which decomposes in a second crystallization step. The effect of deposition rate, film thickness, temperature and surface of the substrate, and most importantly of the composition on the transition temperatures has been investigated. A comparative study of the formation of amorphous phases in a wide variety of Cu-based alloys is presented. (author)

  10. Half-sandwich cobalt complexes in the metal-organic chemical vapor deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Georgi, Colin [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany); Hapke, Marko; Thiel, Indre [Leibniz-Institut für Katalyse e.V. an der Universität Rostock (LIKAT), Albert-Einstein-Straße 29a, Rostock 18059 (Germany); Hildebrandt, Alexander [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany); Waechtler, Thomas; Schulz, Stefan E. [Fraunhofer Institute of Electronic Nano Systems (ENAS), Technologie-Campus 3, Chemnitz 09126 (Germany); Technische Universität Chemnitz, Center for Microtechnologies (ZfM), Chemnitz 09107 (Germany); Lang, Heinrich, E-mail: heinrich.lang@chemie.tu-chemnitz.de [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany)

    2015-03-02

    A series of cobalt half-sandwich complexes of type [Co(η{sup 5}-C{sub 5}H{sub 5})(L)(L′)] (1: L, L′ = 1,5-hexadiene; 2: L = P(OEt){sub 3}, L′ = H{sub 2}C=CHSiMe{sub 3}; 3: L = L′ = P(OEt){sub 3}) has been studied regarding their physical properties such as the vapor pressure, decomposition temperature and applicability within the metal-organic chemical vapor deposition (MOCVD) process, with a focus of the influence of the phosphite ligands. It could be shown that an increasing number of P(OEt){sub 3} ligands increases the vapor pressure and thermal stability of the respective organometallic compound. Complex 3 appeared to be a promising MOCVD precursor with a high vapor pressure and hence was deposited onto Si/SiO{sub 2} (100 nm) substrates. The resulting reflective layer is closed, dense and homogeneous, with a slightly granulated surface morphology. X-ray photoelectron spectroscopy (XPS) studies demonstrated the formation of metallic cobalt, cobalt phosphate, cobalt oxide and cobalt carbide. - Highlights: • Thermal studies and vapor pressure measurements of cobalt half-sandwich complexes was carried out. • Chemical vapor deposition with cobalt half-sandwich complexes is reported. • The use of Co-phosphites results in significant phosphorous-doped metallic layers.

  11. Vapor corrosion of aluminum cladding alloys and aluminum-uranium fuel materials in storage environments

    International Nuclear Information System (INIS)

    Lam, P.; Sindelar, R.L.; Peacock, H.B. Jr.

    1997-04-01

    An experimental investigation of the effects of vapor environments on the corrosion of aluminum spent nuclear fuel (A1 SNF) has been performed. Aluminum cladding alloys and aluminum-uranium fuel alloys have been exposed to environments of air/water vapor/ionizing radiation and characterized for applications to degradation mode analysis for interim dry and repository storage systems. Models have been developed to allow predictions of the corrosion response under conditions of unlimited corrodant species. Threshold levels of water vapor under which corrosion does not occur have been identified through tests under conditions of limited corrodant species. Coupons of aluminum 1100, 5052, and 6061, the US equivalent of cladding alloys used to manufacture foreign research reactor fuels, and several aluminum-uranium alloys (aluminum-10, 18, and 33 wt% uranium) were exposed to various controlled vapor environments in air within the following ranges of conditions: Temperature -- 80 to 200 C; Relative Humidity -- 0 to 100% using atmospheric condensate water and using added nitric acid to simulate radiolysis effects; and Gamma Radiation -- none and 1.8 x 10 6 R/hr. The results of this work are part of the body of information needed for understanding the degradation of the A1 SNF waste form in a direct disposal system in the federal repository. It will provide the basis for data input to the ongoing performance assessment and criticality safety analyses. Additional testing of uranium-aluminum fuel materials at uranium contents typical of high enriched and low enriched fuels is being initiated to provide the data needed for the development of empirical models

  12. Achievement report for fiscal 1981 on Sunshine Program research and development. Research and development of amorphous solar cells (Research and development of amorphous solar cells on flexible film substrates); 1981 nendo amorphous taiyo denchi no kenkyu kaihatsu seika hokokusho. Kadosei film wo kiban to suru amorphous taiyo denchi no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1982-03-31

    Efforts will be made to reduce the cost, increase efficiency, and enlarge cell areas and, at the same time, to establish the foundation of a roll-up type solar cell manufacturing process which is required for the implementation of mass production. In an inverted pin/ITO (indium-tin oxide) hetero-face structure cell installed on a polymer film substrate, a conversion efficiency of 5.33% is achieved in the case of a solar cell whose n-layer is of the amorphous phase, and 6.36% in the case of a cell of the microcrystallized phase. A roll-up type glow discharge CVD (chemical vapor deposition) unit is designed and experimentally built, which is for the realization of large area cells. It is now duly expected that an undoped (i-type) a-Si:H film will be deposited to a thickness of approximately 5000A. As the result of a first-step screening conducted in search of amorphous solar cell sealing materials, some applicable plastic materials are selected. The future is bright of amorphous solar cells on polymer film substrates. (NEDO)

  13. Properties of a-C:H:O plasma polymer films deposited from acetone vapors

    Energy Technology Data Exchange (ETDEWEB)

    Drabik, M., E-mail: martin.drabik@gmail.com [Empa, Swiss Federal Laboratories for Materials Science and Technology, Lerchenfeldstrasse 5, 9014 St. Gallen (Switzerland); Celma, C. [Empa, Swiss Federal Laboratories for Materials Science and Technology, Lerchenfeldstrasse 5, 9014 St. Gallen (Switzerland); Kousal, J.; Biederman, H. [Charles University in Prague, Faculty of Mathematics and Physics, Department of Macromolecular Physics, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); Hegemann, D. [Empa, Swiss Federal Laboratories for Materials Science and Technology, Lerchenfeldstrasse 5, 9014 St. Gallen (Switzerland)

    2014-12-31

    To gain insight into the deposition and stability of oxygen-containing plasma polymer films, the properties of amorphous oxygenated hydrocarbon (a-C:H:O) plasma polymer coatings deposited from acetone vapors under various experimental conditions are investigated. Apart from the discharge power, the influence of the reactive carbon dioxide (CO{sub 2}) gas on the structure of the resulting films is studied. It is found by characterization using X-ray Photoelectron Spectroscopy and Fourier-Transform Infrared Spectroscopy that the experimental conditions particularly influence the amount of oxygen in the deposited a-C:H:O plasma polymer films. The O/C elemental ratio increases with increasing amount of CO{sub 2} in the working gas mixture (up to 0.2 for 24 sccm of CO{sub 2} at 30 W) and decreases with increasing RF discharge power (down to 0.17 for 50 W). Furthermore, the nature of bonds between the oxygen and carbon atoms has been examined. Only low amounts of double and triple bonded carbon are observed. This has a particular influence on the aging of the plasma polymer films which is studied both in ambient air and in distilled water for up to 4 months. Overall, stable a-C:H:O plasma polymer films are deposited comprising low amounts (up to about 5%) of ester/carboxyl groups. - Highlights: • Hydrocarbon plasma polymer films with variable oxygen content can be prepared. • Stable oxygenated hydrocarbon plasma polymers contain max 5% of ester/carboxyl groups. • Acetone-derived plasma polymer films can be used as permanent hydrophilic surfaces.

  14. First-principles study of amorphous Ga4Sb6Te3 phase-change alloys

    Science.gov (United States)

    Bouzid, Assil; Gabardi, Silvia; Massobrio, Carlo; Boero, Mauro; Bernasconi, Marco

    2015-05-01

    First-principles molecular dynamics simulations within the density functional theory framework were performed to generate amorphous models of the Ga4Sb6Te3 phase change alloy by quenching from the melt. We find that Ga-Sb and Ga-Te are the most abundant bonds with only a minor amount of Sb-Te bonds participating to the alloy network. Ga and four-coordinated Sb atoms present a tetrahedral-like geometry, whereas three-coordinated Sb atoms are in a pyramidal configuration. The tetrahedral-like geometries are similar to those of the crystalline phase of the two binary compounds GaTe and GaSb. A sizable fraction of Sb-Sb bonds is also present, indicating a partial nanoscale segregation of Sb. Despite the fact that the composition Ga4Sb6Te3 lies on the pseudobinary Ga Sb -Sb2Te3 tie line, the amorphous network can be seen as a mixture of the two binary compounds GaTe and GaSb with intertwined elemental Sb.

  15. Effect of vapor-phase oxygen on chemical vapor deposition growth of graphene

    Science.gov (United States)

    Terasawa, Tomo-o.; Saiki, Koichiro

    2015-03-01

    To obtain a large-area single-crystal graphene, chemical vapor deposition (CVD) growth on Cu is considered the most promising. Recently, the surface oxygen on Cu has been found to suppress the nucleation of graphene. However, the effect of oxygen in the vapor phase was not elucidated sufficiently. Here, we investigate the effect of O2 partial pressure (PO2) on the CVD growth of graphene using radiation-mode optical microscopy. The nucleation density of graphene decreases monotonically with PO2, while its growth rate reaches a maximum at a certain pressure. Our results indicate that PO2 is an important parameter to optimize in the CVD growth of graphene.

  16. Physical vapor deposited films of a perylene derivative: supramolecular arrangement and thermal stability

    Energy Technology Data Exchange (ETDEWEB)

    Fernandes, Jose Diego; Alessio, Priscila; Silva, Matheus Rodrigues Medeiros; Aroca, Ricardo Flavio; Souza, Agda Eunice de; Constantino, Carlos Jose Leopoldo, E-mail: case@fct.unesp.br [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Presidente Prudente, SP (Brazil). Dept. de Fisica

    2017-07-15

    The analysis of supramolecular arrangement is essential to understand the role of this key factor on the optical and electrical properties of organic thin films. In this work, thin solid films of bis(phenethylimido) perylene (PhPTCD) fabricated using physical vapor deposition (PVD) technique (thermal evaporation), deposited simultaneously onto different substrates (Ag mirror, Ge, and quartz plates) contingent on the characterization technique. The main objective is to study the PhPTCD supramolecular arrangement and the thermal stability of this arrangement in PVD films. The ultraviolet-visible absorption reveals a controlled growth of the PVD films, and the micro-Raman scattering data show that the PhPTCD molecule is not thermally degraded in the conditions of these experiments. The microscopy also shows a homogeneous morphological surface of the PVD film at macro and micro scales, with molecular aggregates at nanoscale. Besides, the PVD film roughness does not follow substrate roughness. The X-ray diffraction indicates a crystalline structure for PhPTCD powder and an amorphous form for PhPTCD PVD film. The infrared absorption spectroscopy points to a preferential flat-on organization of the molecules in the PVD films. In addition, the annealing process (200 deg C for 20 minutes) does not affect the supramolecular arrangement of the PhPTCD PVD films. (author)

  17. Physical vapor deposited films of a perylene derivative: supramolecular arrangement and thermal stability

    International Nuclear Information System (INIS)

    Fernandes, Jose Diego; Alessio, Priscila; Silva, Matheus Rodrigues Medeiros; Aroca, Ricardo Flavio; Souza, Agda Eunice de; Constantino, Carlos Jose Leopoldo

    2017-01-01

    The analysis of supramolecular arrangement is essential to understand the role of this key factor on the optical and electrical properties of organic thin films. In this work, thin solid films of bis(phenethylimido) perylene (PhPTCD) fabricated using physical vapor deposition (PVD) technique (thermal evaporation), deposited simultaneously onto different substrates (Ag mirror, Ge, and quartz plates) contingent on the characterization technique. The main objective is to study the PhPTCD supramolecular arrangement and the thermal stability of this arrangement in PVD films. The ultraviolet-visible absorption reveals a controlled growth of the PVD films, and the micro-Raman scattering data show that the PhPTCD molecule is not thermally degraded in the conditions of these experiments. The microscopy also shows a homogeneous morphological surface of the PVD film at macro and micro scales, with molecular aggregates at nanoscale. Besides, the PVD film roughness does not follow substrate roughness. The X-ray diffraction indicates a crystalline structure for PhPTCD powder and an amorphous form for PhPTCD PVD film. The infrared absorption spectroscopy points to a preferential flat-on organization of the molecules in the PVD films. In addition, the annealing process (200 deg C for 20 minutes) does not affect the supramolecular arrangement of the PhPTCD PVD films. (author)

  18. Coating of diamond-like carbon nanofilm on alumina by microwave plasma enhanced chemical vapor deposition process.

    Science.gov (United States)

    Rattanasatien, Chotiwan; Tonanon, Nattaporn; Bhanthumnavin, Worawan; Paosawatyanyong, Boonchoat

    2012-01-01

    Diamond-like carbon (DLC) nanofilms with thickness varied from under one hundred to a few hundred nanometers have been successfully deposited on alumina substrates by microwave plasma enhanced chemical vapor deposition (MW-PECVD) process. To obtain dense continuous DLC nanofilm coating over the entire sample surface, alumina substrates were pre-treated to enhance the nucleation density. Raman spectra of DLC films on samples showed distinct diamond peak at around 1332 cm(-1), and the broad band of amorphous carbon phase at around 1550 cm(-1). Full width at half maximum height (FWHM) values indicated good formation of diamond phase in all films. The result of nano-indentation test show that the hardness of alumina samples increase from 7.3 +/- 2.0 GPa in uncoated samples to 15.8 +/- 4.5-52.2 +/- 2.1 GPa in samples coated with DLC depending on the process conditions. It is observed that the hardness values are still in good range although the thickness of the films is less than a hundred nanometer.

  19. Correlation of electrical transport and magnetism in amorphous Mn-B alloys

    Science.gov (United States)

    Bryden, W. A.; Morgan, J. S.; Kistenmacher, T. J.; Moorjani, K.

    1987-04-01

    X-ray scattering, magnetism, and electrical transport studies on amorphous thin films of MnxB100-x alloys with x=52 and 48 are reported. Each alloy exhibits a low-field (5 G) static susceptibility peak (10 K, x=52; 16 K, x=48) associated with a spin-glass transition. Isothermal magnetization data (6 K) are analyzed within the random anisotropy model of Chudnovsky, Saslow, and Serota. The magnetization isotherm for the x=52 alloy is dominated at high fields (>24 kG) by field-induced moments, while for x=48 a term (αH-1/2) arising from a ferromagnet with a wandering axis prevails to the highest field strength (44 kG). Initially the electrical resistance for these Mn-B alloys decreases monotonically with decreasing temperature, reaching a minimum (Tm) at 22 K (x=52) and 45 K (x=48). For T>Tm, a quadratic form can be effectively employed, with a negative T2 coefficient and a positive linear coefficient. The rise in resistivity for Talloys display only weakly field-dependent (to 10 kG) magnetoresistance.

  20. Polarization and resistivity measurements of post-crystallization changes in amorphous Fe-B-Si alloys

    International Nuclear Information System (INIS)

    Chattoraj, I.; Bhattamishra, A.K.; Mitra, A.

    1993-01-01

    The effects of grain growth and compositional changes on the electrochemical behavior and the resistivity of amorphous iron-boron-silicon (Fe 77.5 B 15 Si 7.5 ) alloys after crystallization were studied. Deterioration of the protective passive film was observed, along with increased annealing. Potentiodynamic polarization provided excellent information about microstructural and chemical changes. It was concluded that electrochemical measurements could be used in conjunction with resistivity measurements in direct studies of grain growth and chemical changes occurring in different phases of the devitrified alloy

  1. Remote plasma-enhanced metalorganic chemical vapor deposition of aluminum oxide thin films

    NARCIS (Netherlands)

    Volintiru, I.; Creatore, M.; Hemmen, van J.L.; Sanden, van de M.C.M.

    2008-01-01

    Aluminum oxide films were deposited using remote plasma-enhanced metalorganic chemical vapor deposition from oxygen/trimethylaluminum mixtures. Initial studies by in situ spectroscopic ellipsometry demonstrated that the aluminum oxide films deposited at temperatures

  2. Comparative X-ray photoelectron spectroscopy study of plasma enhanced chemical vapor deposition and micro pressure chemical vapor deposition of phosphorus silicate glass layers after rapid thermal annealing

    International Nuclear Information System (INIS)

    Beshkov, G.; Krastev, V.; Gogova, D.; Talik, E.; Adamies, M.

    2008-01-01

    In this paper the bonding state of Phosphorus Silicate Glass (PSG) layers obtained by two different technological approaches, i.e. in two types of reactors: Plasma Enhanced Chemical Vapor Deposition (PECVD) and Micro Pressure Chemical Vapor Deposition (MPCVD) are investigated employing XPS and AES. The PSG layers are deposited at 380 0 C and 420 0 C in corresponding reactors. XPS and AES analyses show that Si2p peak recorded from PECVD layers are not as expected at their position characteristics of silicon dioxide but instead they are at the characteristic of elemental silicon. Plasma enhancement during deposition leads to less oxidized and more inhomogeneous layer. After rapid thermal annealing the Si2p peak is situated at position characteristic of silicon dioxide. (authors)

  3. ANTIMONY INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON

    Institute of Scientific and Technical Information of China (English)

    Y. Wang; H.Z. Li; C.N. Yu; G.M. Wu; I. Gordon; P. Schattschneider; O. Van Der Biest

    2007-01-01

    Antimony induced crystallization of PVD (physics vapor deposition) amorphous silicon can be observed on sapphire substrates. Very large crystalline regions up to several tens of micrometers can be formed. The Si diffraction patterns of the area of crystallization can be observed with TEM (transmission electron microscopy). Only a few and much smaller crystals of the order of 1μm were formed when the antimony layer was deposited by MBE(molecular beam epitaxy) compared with a layer formed by thermal evaporation. The use of high vacuum is essential in order to observe any Sb induced crystallization at all. In addition it is necessary to take measures to limit the evaporation of the antimony.

  4. Vaporization of a mixed precursors in chemical vapor deposition for YBCO films

    Science.gov (United States)

    Zhou, Gang; Meng, Guangyao; Schneider, Roger L.; Sarma, Bimal K.; Levy, Moises

    1995-01-01

    Single phase YBa2Cu3O7-delta thin films with T(c) values around 90 K are readily obtained by using a single source chemical vapor deposition technique with a normal precursor mass transport. The quality of the films is controlled by adjusting the carrier gas flow rate and the precursor feed rate.

  5. Metal–organic covalent network chemical vapor deposition for gas separation

    NARCIS (Netherlands)

    Boscher, N.D.; Wang, M.; Perrotta, A.; Heinze, K.; Creatore, A.; Gleason, K.K.

    2016-01-01

    The chemical vapor deposition (CVD) polymerization of metalloporphyrin building units is demonstrated to provide an easily up-scalable one-step method toward the deposition of a new class of dense and defect-free metal–organic covalent network (MOCN) layers. The resulting hyper-thin and flexible

  6. Vapor deposition in basaltic stalactites, Kilauea, Hawaii

    Science.gov (United States)

    Baird, A. K.; Mohrig, D. C.; Welday, E. E.

    Basaltic stalacties suspended from the ceiling of a large lava tube at Kilauea, Hawaii, have totally enclosed vesicles whose walls are covered with euhedral FeTi oxide and silicate crystals. The walls of the vesicles and the exterior surfaces of stalactites are Fe and Ti enriched and Si depleted compared to common basalt. Minerals in vesicles have surface ornamentations on crystal faces which include alkali-enriched, aluminosilicate glass(?) hemispheres. No sulfide-, chloride-, fluoride-, phosphate- or carbonate-bearing minerals are present. Minerals in the stalactites must have formed by deposition from an iron oxide-rich vapor phase produced by the partial melting and vaporization of wall rocks in the tube.

  7. Structure of the liquid-vapor interface of a dilute ternary alloy: Pb and In in Ga

    International Nuclear Information System (INIS)

    Yang Bin; Li Dongxu; Rice, Stuart A.

    2003-01-01

    We report the results of experimental studies of how the competition between two solutes to segregate in the liquid-vapor interface of a dilute ternary alloy influences the composition and structure of that interface. The system studied has small amounts of Pb and In dissolved in Ga; it differs from a previous study of dilute alloys containing small amounts of Pb and Sn dissolved in Ga by the addition of a new variable, namely, the valence difference between the solute atoms Pb and In. This valence difference influences the electron density distribution in the alloy liquid-vapor interface in proportion to the excess concentrations of the solute species in the interface, and thereby should affect the structure of the interface. We find that for a ternary PbInGa alloy that contains 0.039 at. % Pb and 6.31 at. % In, the Pb that segregates in the liquid-vapor interface forms a two-dimensional hexagonal crystal phase that undergoes a first-order transition to a disordered phase at T=29.0±0.1 deg. C. The two-dimensional crystalline Pb forms about 0.6 of a full monolayer; the remainder of the outer stratum of the liquid-vapor interface is filled with two-dimensional liquid In. For a ternary PbInGa alloy that contains the same amount of Pb and 12.2 at. % In, the Pb that segregates in the liquid-vapor interface forms a two-dimensional liquid down to 26.0 deg. C, the lowest temperature at which data were taken. For temperatures in excess of 29.0 deg. C two-dimensional liquid Pb and two-dimensional liquid In coexist in the interface, with the fractional occupation of the monolayer by In exceeding the fractional occupation by Pb

  8. Synthesis and characterization of thin films of nitrided amorphous carbon deposited by laser ablation

    International Nuclear Information System (INIS)

    Rebollo P, B.

    2001-01-01

    The objective of this work is the synthesis and characterization of thin films of amorphous carbon (a-C) and thin films of nitrided amorphous carbon (a-C-N) using the laser ablation technique for their deposit. For this purpose, the physical properties of the obtained films were studied as function of diverse parameters of deposit such as: nitrogen pressure, power density, substrate temperature and substrate-target distance. For the characterization of the properties of the deposited thin films the following techniques were used: a) Raman spectroscopy which has demonstrated being a sensitive technique to the sp 2 and sp 3 bonds content, b) Energy Dispersive Spectroscopy which allows to know semi-quantitatively way the presence of the elements which make up the deposited films, c) Spectrophotometry, for obtaining the absorption spectra and subsequently the optical energy gap of the deposited material, d) Ellipsometry for determining the refraction index, e) Scanning Electron Microscopy for studying the surface morphology of thin films and, f) Profilemetry, which allows the determination the thickness of the deposited thin films. (Author)

  9. Metal (Ag/Ti)-Containing Hydrogenated Amorphous Carbon Nanocomposite Films with Enhanced Nanoscratch Resistance: Hybrid PECVD/PVD System and Microstructural Characteristics.

    Science.gov (United States)

    Constantinou, Marios; Nikolaou, Petros; Koutsokeras, Loukas; Avgeropoulos, Apostolos; Moschovas, Dimitrios; Varotsis, Constantinos; Patsalas, Panos; Kelires, Pantelis; Constantinides, Georgios

    2018-03-30

    This study aimed to develop hydrogenated amorphous carbon thin films with embedded metallic nanoparticles (a-C:H:Me) of controlled size and concentration. Towards this end, a novel hybrid deposition system is presented that uses a combination of Plasma Enhanced Chemical Vapor Deposition (PECVD) and Physical Vapor Deposition (PVD) technologies. The a-C:H matrix was deposited through the acceleration of carbon ions generated through a radio-frequency (RF) plasma source by cracking methane, whereas metallic nanoparticles were generated and deposited using terminated gas condensation (TGC) technology. The resulting material was a hydrogenated amorphous carbon film with controlled physical properties and evenly dispersed metallic nanoparticles (here Ag or Ti). The physical, chemical, morphological and mechanical characteristics of the films were investigated through X-ray reflectivity (XRR), Raman spectroscopy, Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM) and nanoscratch testing. The resulting amorphous carbon metal nanocomposite films (a-C:H:Ag and a-C:H:Ti) exhibited enhanced nanoscratch resistance (up to +50%) and low values of friction coefficient (<0.05), properties desirable for protective coatings and/or solid lubricant applications. The ability to form nanocomposite structures with tunable coating performance by potentially controlling the carbon bonding, hydrogen content, and the type/size/percent of metallic nanoparticles opens new avenues for a broad range of applications in which mechanical, physical, biological and/or combinatorial properties are required.

  10. Electrical performance of phase change memory cells with Ge{sub 3}Sb{sub 2}Te{sub 6} deposited by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Boschker, Jos E.; Riechert, Henning; Calarco, Raffaella [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Boniardi, Mattia; Redaelli, Andrea [Micron Semiconductor Italia S.r.l., Via C. Olivetti, 2, 20864, Agrate Brianza, MB (Italy)

    2015-01-12

    Here, we report on the electrical characterization of phase change memory cells containing a Ge{sub 3}Sb{sub 2}Te{sub 6} (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80–150 nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles.

  11. Effect of irradiation temperature on crystallization of {alpha}-Fe induced by He irradiations in Fe{sub 80}B{sub 20} amorphous alloy

    Energy Technology Data Exchange (ETDEWEB)

    San-noo, Toshimasa; Toriyama, Tamotsu; Wakabayashi, Hidehiko; Iijima, Hiroshi [Musashi Inst. of Tech., Tokyo (Japan); Hayashi, Nobuyuki; Sakamoto, Isao

    1997-03-01

    Since amorphous alloys are generally highly resistant to irradiation and their critical radiation dose is an order of magnitude higher for Fe-B amorphous alloy than Mo-methods, these alloys are expected to become applicable as for fusion reactor materials. The authors investigated {alpha}-Fe crystallization in an amorphous alloy, Fe{sub 80}B{sub 20} using internal conversion electron Moessbauer spectroscopy. The amount of {alpha}-Fe component was found to increase by raising the He-irradiation dose. The target part was modified to enable He ion radiation at a lower temperature (below 400 K) by cooling with Peltier element. Fe{sub 80}B{sub 20} amorphous alloy was cooled to keep the temperature at 300 K and exposed to 40 keV He ion at 1-3 x 10{sup 8} ions/cm{sup 2}. The amount of {alpha}-Fe crystal in each sample was determined. The crystal formation was not observed for He ion radiation below 2 x 10{sup 18} ions/cm{sup 2}, but that at 3 x 10{sup 8} ions/ cm{sup 2} produced a new phase ({delta} +0.40 mm/sec, {Delta} = 0.89 mm/sec). The decrease in the radiation temperature from 430 to 300 K resulted to extremely repress the production of {alpha}-Fe crystal, suggesting that the crystallization induced by He-radiation cascade is highly depending on the radiation temperature. (M.N.)

  12. Vapor deposition of large area NpO2 and UO2 deposits

    International Nuclear Information System (INIS)

    Adair, H.L.; Gibson, J.R.; Kobisk, E.H.; Dailey, J.M.

    1976-01-01

    Deposition of NpO 2 and UO 2 thin films over an area of 7.5 to 10 cm diam has become a routine operation in preparation of fission chamber plates. Vacuum evaporation or electroplating has been used for this purpose. The ''paint brush'' technique has been used as well; however, uniformity requirements normally eliminate this procedure. Vapor deposition in vacuum appears to be the most suitable technique for preparing NpO 2 and UO 2 deposits of >200 cm 2 . This paper describes the procedures used in preparing uniform large area deposits of NpO 2 (approximately 300 cm 2 ) and UO 2 (approximately 2000 cm 2 ) by vacuum evaporation using electron bombardment heating and several substrate motion and heating methods to achieve uniformity and adhesion

  13. Recoil-free Fraction in Amorphous and Nanocrystalline Aluminium Based Alloys

    Science.gov (United States)

    Sitek, Jozef

    2008-10-01

    Aluminium based rapidly quenched alloys of nominal composition Al90Fe7Nb3 and Al94Fe2V4 were studied by Mössbauer spectroscopy. We have measured the recoil-free fraction and thermal shift at room and liquid nitrogen temperature. The frequency modes of atomic vibrations were determined and consequently the characteristic Debye temperature was derived. Characteristic temperature calculated from f-factor was lower than those fitted from second order Doppler shift. This indicates the presence of different frequency modes for amorphous and nanocrystalline states.

  14. Low-temperature specific heat of the 'nearly ferromagnetic' amorphous alloy Ysub(0.22)Nisub(0.78)

    International Nuclear Information System (INIS)

    Garoche, P.; Veyssie, J.J.; Lienard, A.; Rebouillat, J.P.

    1979-01-01

    Results of specific heat measurements, between 0.3K and 10 K in magnetic fields up to 75 kOe, on the 'nearly ferromagnetic' amorphous alloy Ysub(0.22)Nisub(0.78) are reported. The results, especially the magnetic field dependence, exclude any appreciable contribution from uniform paramagnons. In contrast a quantitative analysis is obtained in terms of superparamagnetic clusters, demonstrating that the onset of ferromagnetism, as a function of concentration, is inhomogeneous in this amorphous metallic system. (author)

  15. Formation of nanocrystalline phases during decomposition of amorphous Ni-P alloys by continuous linear heating

    Energy Technology Data Exchange (ETDEWEB)

    Revesz, A.; Lendvai, J. [Eoetvoes Lorand Tudomanyegyeten, Budapest (Hungary). Dept. for General Physics; Cziraki, A. [Eoetvoes Univ. (Hungary). Dept. of Solid State Physics; Liebermann, H.H. [Honeywell Amorphous Metals, Morristown, NJ (United States); Bakonyi, I. [Hungarian Academy of Sciences (Hungary). Research Inst. for Solid State Physics and Optics

    2001-05-01

    Differential scanning calorimetry (DSC), powder diffraction and high-resolution X-ray diffraction (XRD), and transmission electron microscopy (TEM) investigations have been performed on melt-quenched amorphous Ni-P alloys with compositions of 18 to 22 at.% P. The calorimetric results revealed different crystallization routes during linear heating below, at and above the eutectic point (19 at.% P) but with the same general transformation scheme as reported previously for electrodeposited and electroless Ni-P amorphous alloys. The composition dependence of the activation energy of the crystallization and the heats evolved during the structural transformations were determined from DSC measurements. The average grain size was derived from XRD line broadening and important information on the crystallization products and their microstructure could be revealed also from the TEM studies. All these findings will have special significance when analysing the results of isothermal annealing experiments to be described in a forthcoming paper. (orig.)

  16. The Effect of Spatial Heterogeneities on Nucleation Kinetics in Amorphous Aluminum Alloys

    Science.gov (United States)

    Shen, Ye

    The mechanical property of the Al based metallic glass could be enhanced significantly by introducing the high number density of Al-fcc nanocrystals (1021 ˜1023 m-3) to the amorphous matrix through annealing treatments, which motivates the study of the nucleation kinetics for the microstructure control. With the presence of a high number density (1025 m-3) of aluminum-like medium range order (MRO), the Al-Y-Fe metallic glass is considered to be spatially heterogeneous. Combining the classical nucleation theory with the structural configuration, a MRO seeded nucleation model has been proposed and yields theoretical steady state nucleation rates consistent with the experimental results. In addition, this model satisfies all the thermodynamic and kinetic constraints to be reasonable. Compared with the Al-Y-Fe system, the primary crystallization onset temperature decreases significantly and the transient delay time (tau) is shorter in the Al-Y-Fe-Pb(In) systems because the insoluble Pb and In nanoparticles in the amorphous matrix served as extrinsic spatial heterogeneity to provide the nucleation sites for Al-fcc precipitation and the high-resolution transmission electron microscopy (HRTEM) images of the Pb-Al interface revealed a good wetting behavior between the Al and Pb nanoparticles. The study of the transient delay time (tau) could provide insight on the transport behavior during the nucleation and a more convenient approach to evaluate the delay time has been developed by measuring the Al-Y-Fe amorphous alloy glass transition temperature (Tg) shift with the increasing annealing time (tannealing) in FlashDSC. The break point in the Tg vs. log(tannealing) plot has been identified to correspond to the delay time by the TEM characterization. FlashDSC tests with different heating rates and different compositions (Al-Y-Fe-Pb and Zn-Mg-Ca-Yb amorphous alloys) further confirmed the break point and delay time relationship. The amorphous matrix composition and the

  17. Thermal stability and primary phase of Al-Ni(Cu)-La amorphous alloys

    International Nuclear Information System (INIS)

    Huang Zhenghua; Li Jinfu; Rao Qunli; Zhou Youhe

    2008-01-01

    Thermal stability and primary phase of Al 85+x Ni 9-x La 6 (x = 0-6) and Al 85 Ni 9-x Cu x La 6 (x = 0-9) amorphous alloys were investigated by X-ray diffraction and differential scanning calorimeter. It is revealed that replacing Ni in the Al 85 Ni 9 La 6 alloy by Cu decreases the thermal stability and makes the primary phase change from intermetallic compounds to single fcc-Al as the Cu content reaches and exceeds 4 at.%. When the Ni and La contents are fixed, replacing Al by Cu increases the thermal stability but also promotes the precipitation of single fcc-Al as the primary phase

  18. Crystallization processes in an amorphous Co-Fe-Cr-Si-B alloy under isothermal annealing

    Science.gov (United States)

    Fedorets, A. N.; Pustovalov, E. V.; Plotnikov, V. S.; Modin, E. B.; Kraynova, G. S.; Frolov, A. M.; Tkachev, V. V.; Tsesarskaya, A. K.

    2017-09-01

    Research present the crystallization processes investigation of the amorphous Co67Fe3Cr3Si15B12 alloy. In-situ experiments on heating in a transmission electron microscope (TEM) column were carried out. Critical temperatures influencing material structure are determined. The onset temperature of material crystallization was determined.

  19. Thermally induced crystallization of amorphous Fe40Ni40P14B6 alloy

    Czech Academy of Sciences Publication Activity Database

    Vasić, M.; Blagojević, V. A.; Begović, N. N.; Žák, Tomáš; Pavlović, V. B.; Minić, Dragica M.

    2015-01-01

    Roč. 614, AUG (2015), s. 129-136 ISSN 0040-6031 R&D Projects: GA MŠk(CZ) ED1.1.00/02.0068 Institutional support: RVO:68081723 Keywords : Amorphous alloy * Crystallization * Kinetics * Deconvolution * Impingement * Surface morphology Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.938, year: 2015

  20. Hot wire deposited hydrogenated amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mahan, A.H.; Iwaniczko, E.; Nelson, B.P.; Reedy, R.C. Jr.; Crandall, R.S. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    This paper details the results of a study in which low H content, high deposition rate hot wire (HW) deposited amorphous silicon (a-Si:H) has been incorporated into a substrate solar cell. The authors find that the treatment of the top surface of the HW i layer while it is being cooled from its high deposition temperature is crucial to device performance. They present data concerning these surface treatments, and correlate these treatments with Schottky device performance. The authors also present first generation HW n-i-p solar cell efficiency data, where a glow discharge (GD) {mu}c-Si(p) layer was added to complete the partial devices. No light trapping layer was used to increase the device Jsc. Their preliminary investigations have yielded efficiencies of up to 6.8% for a cell with a 4000 {Angstrom} thick HW i-layer, which degrade less than 10% after a 900 hour light soak. The authors suggest avenues for further improvement of their devices.

  1. Si Nano wires Produced by Very High Frequency Plasma Enhanced Chemical Vapor Deposition (PECVD) via VLS Mechanism

    International Nuclear Information System (INIS)

    Yussof Wahab; Yussof Wahab; Habib Hamidinezhad; Habib Hamidinezhad

    2013-01-01

    Silicon nano wires (SiNWs) with diameter of about a few nanometers and length of 3 μm on silicon wafers were synthesized by very high frequency plasma enhanced chemical vapor deposition. Scanning electron microscopy (SEM) observations showed that the silicon nano wires were grown randomly and energy-dispersive X-ray spectroscopy analysis indicates that the nano wires have the composition of Si, Au and O elements. The SiNWs were characterized by high resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. SEM micrographs displayed SiNWs that are needle-like with a diameter ranged from 30 nm at the top to 100 nm at the bottom of the wire and have length a few of micrometers. In addition, HRTEM showed that SiNWs consist of crystalline silicon core and amorphous silica layer. (author)

  2. Short-range order of amorphous FeNiB alloy after neutron irradiation

    International Nuclear Information System (INIS)

    Miglierini, M.; Sitek, J.; Baluch, S.; Cirak, J.; Lipka, J.

    1990-01-01

    Transmission Moessbauer spectroscopy was used to study irradiation-induced changes in the short-range order of an amorphous Fe 80-x Ni x B 20 alloy. Neutron irradiation led to an increase of the width of a hyperfine field distribution implying atomic rearrangement towards disordering. Changes in a mean value of a HFD and Moessbauer line areas can be associated with a reorientation of spins due to radiation damage. (orig.)

  3. Directional and short-range ordering kinetics in metallic alloys, crystalline and amorphous

    International Nuclear Information System (INIS)

    Hillairet, J.

    1985-01-01

    This presentation describes the methods (resistometric and anelastic) based on analysis of stress-induced directional ordering and short-range ordering and their application to the study of metallic alloys, crystalline and amorphous. It focuses on the determination of the atomic mobility and point defect properties. It discusses also the structural information which can be gained by Zener relaxation studies about the order-disorder transition and self-induced directional ordering phenomena

  4. Chemical vapor deposition (CVD) of uranium for alpha spectrometry

    International Nuclear Information System (INIS)

    Ramirez V, M. L.; Rios M, C.; Ramirez O, J.; Davila R, J. I.; Mireles G, F.

    2015-09-01

    The uranium determination through radiometric techniques as alpha spectrometry requires for its proper analysis, preparation methods of the source to analyze and procedures for the deposit of this on a surface or substrate. Given the characteristics of alpha particles (small penetration distance and great loss of energy during their journey or its interaction with the matter), is important to ensure that the prepared sources are thin, to avoid problems of self-absorption. The routine methods used for this are the cathodic electro deposition and the direct evaporation, among others. In this paper the use of technique of chemical vapor deposition (CVD) for the preparation of uranium sources is investigated; because by this, is possible to obtain thin films (much thinner than those resulting from electro deposition or evaporation) on a substrate and comprises reacting a precursor with a gas, which in turn serves as a carrier of the reaction products to achieve deposition. Preliminary results of the chemical vapor deposition of uranium are presented, synthesizing and using as precursor molecule the uranyl acetylacetonate, using oxygen as carrier gas for the deposition reaction on a glass substrate. The uranium films obtained were found suitable for alpha spectrometry. The variables taken into account were the precursor sublimation temperatures and deposition temperature, the reaction time and the type and flow of carrier gas. Of the investigated conditions, two depositions with encouraging results that can serve as reference for further work to improve the technique presented here were selected. Alpha spectra obtained for these depositions and the characterization of the representative samples by scanning electron microscopy and X-ray diffraction are also presented. (Author)

  5. Characterization of oxide layers on amorphous Mg-based alloys by Auger electron spectroscopy with sputter depth profiling

    Energy Technology Data Exchange (ETDEWEB)

    Baunack, S.; Wolff, U. [Leibniz-Institut fuer Festkoerper- und Werkstoffforschung Dresden, Postfach 270016, 01171, Dresden (Germany); Subba Rao, R.V. [Indira Ghandi Centre for Atomic Research, 603 102, Kalpakkam, Tamil Nadu (India)

    2003-04-01

    Amorphous ribbons of Mg-Y-TM-[Ag](TM: Cu, Ni), prepared by melt spinning, were subjected to electrochemical investigations. Oxide layers formed anodically under potentiostatic control in different electrolytes were investigated by AES and sputter depth profiling. Problems and specific features of characterization of the composition of oxide layers and amorphous ternary or quaternary Mg-based alloys have been investigated. In the alloys the Mg(KL{sub 23}L{sub 23}) peak exhibits a different shape compared to that in the pure element. Analysis of the peak of elastically scattered electrons proved the absence of plasmon loss features, characteristic of pure Mg, in the alloy. A different loss feature emerges in Mg(KL{sub 23}L{sub 23}) and Cu(L{sub 23}VV). The system Mg-Y-TM-[Ag] suffers preferential sputtering. Depletion of Mg and enrichment of TM and Y are found. This is attributed mainly to the preferential sputtering of Mg. Thickness and composition of the formed oxide layer depend on the electrochemical treatment. After removing the oxide by sputtering the concentration of the underlying alloy was found to be affected by the treatment. (orig.)

  6. Extended x-ray absorption fine structure studies of amorphous and crystalline Si-Ge alloys with synchrotron radiation

    International Nuclear Information System (INIS)

    Kajiyama, Hiroshi

    1988-01-01

    Extended X-ray absorption fine structure (EXAFS) is a powerful probe to study the local structure around the atom of a specific element. In conventional EXAFS analysis, it has been known that reliable structures are obtained with the different values of absorption edge energy for different neighboring atoms. It is shown in this study that the Ge-K edge EXAFS resulting from the Ge-Ge and Ge-Si bonds in hydrogenated amorphous Si-Ge alloys was able to be excellently explained by a unique absorption edge energy value, provided that a newly developed formula based on the spherical wave function of photoelectrons is used. The microscopic structures of hydrogenated amorphous Si-Ge alloys and crystalline Si-Ge alloys have been determined using the EXAFS method. The lengths of Ge-Ge and Ge-Si bonds were constant throughout their entire composition range, and it was found that the length of Ge-Si bond was close to the average value of the bond lengths of both Ge and Si crystals. In crystalline Si-Ge alloys, it has been shown that the bonds relaxed completely, while the lattice constant varied monotonously with the composition. (Kako, I.)

  7. Density of states in Mo-Ru amorphous alloys

    International Nuclear Information System (INIS)

    Miyakawa, W.

    1985-01-01

    The density of states is calculated for several compositions of amorphous Mo 1-x Ru x . In order to simulate amorphous clusters, the structures (atomic positions) utilized in the calculations were built from a small dense randomly packed unit of hard spheres with periodic boundary conditions. The density of states is calculated from a tight-binding Hamiltonian with hopping integrals parametrized in terms of the ddσ, ddΠ and ddδ molecular integrals. The results for pure Mo and pure Ru, compared in the canonical band aproximation, agree well with the literature. For binary alloys, the comparison of the calculated density of states with the rigid band aproximation results indicates that a more complex approach than the rigid band model must be used, even when the two atoms have similar bands, with band centers at nearly the same energy. The results also indicate that there is no relation between the peak in the superconducting critical temperature as a function of the number of valence eletrons per atom (e/a) in the region near Mo(e/a=6) and the peak of the density of states at the Fermi level in the same region, as has been sugested by some authors. (Author) [pt

  8. Preparation of membranes using solvent-less vapor deposition followed by in-situ polymerization

    Science.gov (United States)

    O'Brien, Kevin C [San Ramon, CA; Letts, Stephan A [San Ramon, CA; Spadaccini, Christopher M [Oakland, CA; Morse, Jeffrey C [Pleasant Hill, CA; Buckley, Steven R [Modesto, CA; Fischer, Larry E [Los Gatos, CA; Wilson, Keith B [San Ramon, CA

    2010-07-13

    A system of fabricating a composite membrane from a membrane substrate using solvent-less vapor deposition followed by in-situ polymerization. A first monomer and a second monomer are directed into a mixing chamber in a deposition chamber. The first monomer and the second monomer are mixed in the mixing chamber providing a mixed first monomer and second monomer. The mixed first monomer and second monomer are solvent-less vapor deposited onto the membrane substrate in the deposition chamber. The membrane substrate and the mixed first monomer and second monomer are heated to produce in-situ polymerization and provide the composite membrane.

  9. Thin films of hydrogenated amorphous carbon (a-C:H) obtained through chemical vapor deposition assisted by plasma; Peliculas delgadas de carbono amorfo hidrogenado (a-C:H) obtenidas mediante deposito quimico de vapores asistido por plasma

    Energy Technology Data Exchange (ETDEWEB)

    Mejia H, J.A.; Camps C, E.E.; Escobar A, L.; Romero H, S.; Chirino O, S. [ININ, 52045 Ocoyoacac, Estado de Mexico (Mexico); Muhl S, S. [IIM-UNAM, 04510 Mexico D.F. (Mexico)

    2004-07-01

    Films of hydrogenated amorphous carbon (a-C:H) were deposited using one source of microwave plasma with magnetic field (type ECR), using mixtures of H{sub 2}/CH{sub 4} in relationship of 80/20 and 95/05 as precursory gases, with work pressures of 4X10{sup -4} to 6x10{sup -4} Torr and an incident power of the discharge of microwaves with a constant value of 400 W. It was analyzed the influence among the properties of the films, as the deposit rate, the composition and the bonding types, and the deposit conditions, such as the flow rates of the precursory gases and the polarization voltage of the sample holders. (Author)

  10. Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

    Science.gov (United States)

    Perkins, Charles M.; Triplett, Baylor B.; McIntyre, Paul C.; Saraswat, Krishna C.; Haukka, Suvi; Tuominen, Marko

    2001-04-01

    Structural and electrical properties of gate stack structures containing ZrO2 dielectrics were investigated. The ZrO2 films were deposited by atomic layer chemical vapor deposition (ALCVD) after different substrate preparations. The structure, composition, and interfacial characteristics of these gate stacks were examined using cross-sectional transmission electron microscopy and x-ray photoelectron spectroscopy. The ZrO2 films were polycrystalline with either a cubic or tetragonal crystal structure. An amorphous interfacial layer with a moderate dielectric constant formed between the ZrO2 layer and the substrate during ALCVD growth on chemical oxide-terminated silicon. Gate stacks with a measured equivalent oxide thickness (EOT) of 1.3 nm showed leakage values of 10-5 A/cm2 at a bias of -1 V from flatband, which is significantly less than that seen with SiO2 dielectrics of similar EOT. A hysteresis of 8-10 mV was seen for ±2 V sweeps while a midgap interface state density (Dit) of ˜3×1011 states/cm eV was determined from comparisons of measured and ideal capacitance curves.

  11. Process for the preparation of fiber-reinforced ceramic composites by chemical vapor deposition

    Science.gov (United States)

    Lackey, Jr., Walter J.; Caputo, Anthony J.

    1986-01-01

    A chemical vapor deposition (CVD) process for preparing fiber-reinforced ceramic composites. A specially designed apparatus provides a steep thermal gradient across the thickness of a fibrous preform. A flow of gaseous ceramic matrix material is directed into the fibrous preform at the cold surface. The deposition of the matrix occurs progressively from the hot surface of the fibrous preform toward the cold surface. Such deposition prevents the surface of the fibrous preform from becoming plugged. As a result thereof, the flow of reactant matrix gases into the uninfiltrated (undeposited) portion of the fibrous preform occurs throughout the deposition process. The progressive and continuous deposition of ceramic matrix within the fibrous preform provides for a significant reduction in process time over known chemical vapor deposition processes.

  12. A comparison of diamond growth rate using in-liquid and conventional plasma chemical vapor deposition methods

    International Nuclear Information System (INIS)

    Takahashi, Yoshiyuki; Toyota, Hiromichi; Nomura, Shinfuku; Mukasa, Shinobu; Inoue, Toru

    2009-01-01

    In order to make high-speed deposition of diamond effective, diamond growth rates for gas-phase microwave plasma chemical vapor deposition and in-liquid microwave plasma chemical vapor deposition are compared. A mixed gas of methane and hydrogen is used as the source gas for the gas-phase deposition, and a methanol solution of ethanol is used as the source liquid for the in-liquid deposition. The experimental system pressure is in the range of 60-150 kPa. While the growth rate of diamond increases as the pressure increases, the amount of input microwave energy per unit volume of diamond is 1 kW h/mm 3 regardless of the method used. Since the in-liquid deposition method provides a superior cooling effect through the evaporation of the liquid itself, a higher electric input power can be applied to the electrodes under higher pressure environments. The growth rate of in-liquid microwave plasma chemical vapor deposition process is found to be greater than conventional gas-phase microwave plasma chemical vapor deposition process under the same pressure conditions.

  13. A comparison of diamond growth rate using in-liquid and conventional plasma chemical vapor deposition methods

    Science.gov (United States)

    Takahashi, Yoshiyuki; Toyota, Hiromichi; Nomura, Shinfuku; Mukasa, Shinobu; Inoue, Toru

    2009-06-01

    In order to make high-speed deposition of diamond effective, diamond growth rates for gas-phase microwave plasma chemical vapor deposition and in-liquid microwave plasma chemical vapor deposition are compared. A mixed gas of methane and hydrogen is used as the source gas for the gas-phase deposition, and a methanol solution of ethanol is used as the source liquid for the in-liquid deposition. The experimental system pressure is in the range of 60-150 kPa. While the growth rate of diamond increases as the pressure increases, the amount of input microwave energy per unit volume of diamond is 1 kW h/mm3 regardless of the method used. Since the in-liquid deposition method provides a superior cooling effect through the evaporation of the liquid itself, a higher electric input power can be applied to the electrodes under higher pressure environments. The growth rate of in-liquid microwave plasma chemical vapor deposition process is found to be greater than conventional gas-phase microwave plasma chemical vapor deposition process under the same pressure conditions.

  14. Plasmochemical modification of aluminum-zinc alloys using NH{sub 3}-Ar atmosphere with anti-wear coatings deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kyzioł, Karol, E-mail: kyziol@agh.edu.pl [Faculty of Materials Science and Ceramics, AGH University of Science and Technology, A. Mickiewicza Av. 30, 30 059 Kraków (Poland); Koper, Katarzyna [Faculty of Materials Science and Ceramics, AGH University of Science and Technology, A. Mickiewicza Av. 30, 30 059 Kraków (Poland); Kaczmarek, Łukasz [Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego Str. 1/15, 90 924 Łódz (Poland); Grzesik, Zbigniew [Faculty of Materials Science and Ceramics, AGH University of Science and Technology, A. Mickiewicza Av. 30, 30 059 Kraków (Poland)

    2017-03-01

    This paper constitutes a continuation of studies on modification technologies for 7075 series aluminum alloys (Al-Zn) in plasmochemical conditions using the RF CVD (Radio-Frequency Chemical Vapor Deposition) method. This technique is simultaneously the second stage of alloy ageing. The presented results concern optimization of alloy surface modification using N{sup +} ions (in NH{sub 3} or NH{sub 3}/Ar atmosphere) before obtaining a DLC (Diamond-Like Carbon) layer doped with Si and N. From the results it can be concluded that the most profitable mechanical properties (H, ca. 12 GPa and E, ca. 115 GPa) are obtained when the SiCNH coating process is preceded by Al-Zn alloy surface modification with nitrogen ions. These ions are provided by a flowing NH{sub 3} and Ar gas mixture (1:1 ratio). In these process conditions, the lowest tribological wear of the surface is also observed. Furthermore, the obtained coating exhibits a fine-grained structure. - Highlights: • Surface properties of Al-Zn alloy after plasma processes are investigated. • Modification in a RF reactor was the second stage of ageing. • The N{sup +} ion treatments of aluminum substrates was justified. • SiCNH coatings obtained on Al alloys significantly improve mechanical parameters.

  15. Characterization of amorphous yttria layers deposited by aqueous solutions of Y-chelate alkoxides complex

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Young-Soon, E-mail: kyscjb@i-sunam.com; Lee, Yu-Ri; Kim, Byeong-Joo; Lee, Jae-Hun; Moon, Seung-Hyun; Lee, Hunju

    2015-01-15

    Highlights: • Economical method for crack-free amorphous yttria layer deposition by dip coating. • Simpler process for planar yttria film as a diffusion barrier and nucleation layer. • Easy control over the film properties with better characteristics. • Easy control over the thickness of the deposited films. • A feasible process that can be easily adopted by HTSCC industries. - Abstract: Crack-free amorphous yttria layers were deposited by dip coating in solutions of different Y-chelate alkoxides complex. Three Y-chelate solutions of different concentrations were prepared using yttrium acetate tetrahydrate, yttrium stearic acid as Y source materials. PEG, diethanolamine were used as chelating agents, while ethanol, methanol and tetradecane were used as solvent. Three different combinations of chelating and solvents were used to prepare solutions for Y{sub 2}O{sub 3} dip coating on SUS, electropolished and non-electropolished Hastelloy C-276 substrates. The thickness of the films was varied by changing the number of dipping cycles. At an optimized condition, the substrate surface roughness (rms) value was reduced from ∼50 nm to ∼1 nm over a 10 × 10 μm{sup 2} area. After Y{sub 2}O{sub 3} deposition, MgO was deposited using ion-beam assisted deposition (IBAD), then LaMnO{sub 3} (LMO) was deposited using sputtering and GdBCO was deposited using reactive co-evaporation by deposition and reaction (RCE-DR). Detailed X-ray study indicates that LMO/MgO/Y{sub 2}O{sub 3} and GdBCO/LMO/MgO/Y{sub 2}O{sub 3} stack films have good out-of-plane and in-plane textures with strong c-axis alignment. The critical current (Ic) of GdBCO/LMO/MgO/Y{sub 2}O{sub 3} multilayer structure varied from 190 to 420 A/cm with different solutions, when measured at 77 K. These results demonstrated that amorphous yttria can be easily deposited by dip coating using Y-chelates complex as a diffusion barrier and nucleation layer.

  16. Metal Amorphous Nanocomposite (MANC) Alloy Cores with Spatially Tuned Permeability for Advanced Power Magnetics Applications

    Science.gov (United States)

    Byerly, K.; Ohodnicki, P. R.; Moon, S. R.; Leary, A. M.; Keylin, V.; McHenry, M. E.; Simizu, S.; Beddingfield, R.; Yu, Y.; Feichter, G.; Noebe, R.; Bowman, R.; Bhattacharya, S.

    2018-06-01

    Metal amorphous nanocomposite (MANC) alloys are an emerging class of soft magnetic materials showing promise for a range of inductive components targeted for higher power density and higher efficiency power conversion applications including inductors, transformers, and rotating electrical machinery. Magnetization reversal mechanisms within these alloys are typically determined by composition optimization as well as controlled annealing treatments to generate a nanocomposite structure composed of nanocrystals embedded in an amorphous precursor. Here we demonstrate the concept of spatially varying the permeability within a given component for optimization of performance by using the strain annealing process. The concept is realized experimentally through the smoothing of the flux profile from the inner to outer core radius achieved by a monotonic variation in tension during the strain annealing process. Great potential exists for an extension of this concept to a wide range of other power magnetic components and more complex spatially varying permeability profiles through advances in strain annealing techniques and controls.

  17. Characterization of diamond-like nanocomposite thin films grown by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Santra, T. S.; Liu, C. H.; Bhattacharyya, T. K.; Patel, P.; Barik, T. K.

    2010-01-01

    Diamond-like nanocomposite (DLN) thin films, comprising the networks of a-C:H and a-Si:O were deposited on pyrex glass or silicon substrate using gas precursors (e.g., hexamethyldisilane, hexamethyldisiloxane, hexamethyldisilazane, or their different combinations) mixed with argon gas, by plasma enhanced chemical vapor deposition technique. Surface morphology of DLN films was analyzed by atomic force microscopy. High-resolution transmission electron microscopic result shows that the films contain nanoparticles within the amorphous structure. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) were used to determine the structural change within the DLN films. The hardness and friction coefficient of the films were measured by nanoindentation and scratch test techniques, respectively. FTIR and XPS studies show the presence of C-C, C-H, Si-C, and Si-H bonds in the a-C:H and a-Si:O networks. Using Raman spectroscopy, we also found that the hardness of the DLN films varies with the intensity ratio I D /I G . Finally, we observed that the DLN films has a better performance compared to DLC, when it comes to properties like high hardness, high modulus of elasticity, low surface roughness and low friction coefficient. These characteristics are the critical components in microelectromechanical systems (MEMS) and emerging nanoelectromechanical systems (NEMS).

  18. Low-energy excitations in amorphous films of silicon and germanium

    International Nuclear Information System (INIS)

    Liu, X.; Pohl, R.O.

    1998-01-01

    We present measurements of internal friction and shear modulus of amorphous Si (a-Si) and amorphous Ge (a-Ge) films on double-paddle oscillators at 5500 Hz from 0.5 K up to room temperature. The temperature- independent plateau in internal friction below 10 K, which is common to all amorphous solids, also exists in these films. However, its magnitude is smaller than found for all other amorphous solids studied to date. Furthermore, it depends critically on the deposition methods. For a-Si films, it decreases in the sequence of electron-beam evaporation, sputtering, self-ion implantation, and hot-wire chemical-vapor deposition (HWCVD). Annealing can also reduce the internal friction of the amorphous films considerably. Hydrogenated a-Si with 1 at.% H prepared by HWCVD leads to an internal friction more than two orders of magnitude smaller than observed for all other amorphous solids. The internal friction increases after the hydrogen is removed by effusion. Our results are compared with earlier measurements on a-Si and a-Ge films, none of which had the sensitivity achieved here. The variability of the low-energy tunneling states in the a-Si and a-Ge films may be a consequence of the tetrahedrally bonded covalent continuous random network. The perfection of this network, however, depends critically on the preparation conditions, with hydrogen incorporation playing a particularly important role. copyright 1998 The American Physical Society

  19. Vapor deposition on doublet airfoil substrates: Control of coating thickness and microstructure

    Energy Technology Data Exchange (ETDEWEB)

    Rodgers, Theron M.; Zhao, Hengbei; Wadley, Haydn N. G., E-mail: haydn@virginia.edu [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., P.O. Box 400745, Charlottesville, Virginia 22904 (United States)

    2015-11-15

    Gas jet assisted vapor deposition processes for depositing coatings are conducted at higher pressures than conventional physical vapor deposition methods, and have shown promise for coating complex shaped substrates including those with non-line-of-sight (NLS) regions on their surface. These regions typically receive vapor atoms at a lower rate and with a wider incident angular distribution than substrate regions in line-of-sight (LS) of the vapor source. To investigate the coating of such substrates, the thickness and microstructure variation along the inner (curved) surfaces of a model doublet airfoil containing both LS and NLS regions has been investigated. Results from atomistic simulations and experiments confirm that the coating's thickness is thinner in flux-shadowed regions than in other regions for all the coating processes investigated. They also indicated that the coatings columnar microstructure and pore volume fraction vary with surface location through the LS to NLS transition zone. A substrate rotation strategy for optimizing the thickness over the entire doublet airfoil surface was investigated, and led to the identification of a process that resulted in only small variation of coating thickness, columnar growth angle, and pore volume fraction on all doublet airfoil surfaces.

  20. Research of the welding of amorphous Co-based alloys in shape of foils with Nd: YAG-LASER

    International Nuclear Information System (INIS)

    Runchev, Dobre

    1996-01-01

    In this study the results concerning the research of the welding of amorphous Co-based alloys in form of foils, with impulsive Nd: YAG LASER are given. The welding was effected on alloys with manufactured sign VAC 6025, VAC 6030, VAC 6150 as well as with different chemical structure and dimensions. Two overlapped foils of the same alloy have been connected with 6 welded spots, under laboratory conditions and in air surrounding. The welding was effected only with negative focus position (-Def.). The basic aim of the researches is the production of a spot welded joints by preserving the amorphous structure of the material. To achieve this purpose, examinations of the optical characteristics of the welded alloys were effected, by measuring the reflective energy of the laser beam from the surface of the AMF. The quality of the spot welded joint is established by shearing examination, measuring of the microhardness, metallographic examinations of the structure by both light microscope and SEM, as well as measuring of the welded spot diameter. After the examinations and the analysis of the achieved results, it is defined that the welding of AMF A and B the established aim was achieved. The welded spots ware with good quality, the structure remained amorphous and the mechanical characteristics, such as Rm and HV0, 2 were at the level of the basic materials. During the welding of AMF C, D and E, the established aim was not achieved. The welded spots ware with bad quality, as a result of the appeared crystal structure in the welded spots. The experimental researches presented in this study, have been carried out in the Technical University in Berlin. (author)

  1. Corrosion study of the passive film of amorphous Fe-Cr-Ni-(Si, P, B alloys

    Directory of Open Access Journals (Sweden)

    López, M. F.

    1996-12-01

    Full Text Available Amorphous Fe62Cr10Ni8X20 (X = P, B, Si alloys in 0.01M HCl solution have been investigated by means of standard electrochemical measurements in order to evaluate their corrosion resistance. The study reveals that the best corrosion behaviour is given by the Si containing amorphous alloy. X-ray photoelectron spectroscopy (XPS and Auger electron spectroscopy (AJES have been employed to study the composition of the passive layers, formed on the surface of the different amorphous alloys. The results on Fe62Cr10Ni8X20 show that a protective passive film, mainly consisting of oxidized chromium, greatly enhances its corrosion resistance.

    La resistencia a la corrosión de las aleaciones amorfas Fe62Cr10Ni8X20 (X = P, B, Si inmersas en HCl 0,01M se evaluó usando técnicas electroquímicas. Las técnicas de espectroscopia de fotoemisión de rayos X y espectroscopia Auger se emplearon para estudiar la composición de las capas pasivas, formadas en aire sobre la superficie de las aleaciones amorfas. Del estudio realizado se concluye que el mejor comportamiento frente a la corrosión viene dado por la aleación amorfa que contiene como metaloide Si. Esto es debido a que la capa pasiva de dicha aleación está formada principalmente de óxido de cromo, lo cual confiere una alta resistencia a la corrosión.

  2. Magmatic-vapor expansion and the formation of high-sulfidation gold deposits: Chemical controls on alteration and mineralization

    Science.gov (United States)

    Henley, R.W.; Berger, B.R.

    2011-01-01

    Large bulk-tonnage high-sulfidation gold deposits, such as Yanacocha, Peru, are the surface expression of structurally-controlled lode gold deposits, such as El Indio, Chile. Both formed in active andesite-dacite volcanic terranes. Fluid inclusion, stable isotope and geologic data show that lode deposits formed within 1500. m of the paleo-surface as a consequence of the expansion of low-salinity, low-density magmatic vapor with very limited, if any, groundwater mixing. They are characterized by an initial 'Sulfate' Stage of advanced argillic wallrock alteration ?? alunite commonly with intense silicification followed by a 'Sulfide' Stage - a succession of discrete sulfide-sulfosalt veins that may be ore grade in gold and silver. Fluid inclusions in quartz formed during wallrock alteration have homogenization temperatures between 100 and over 500 ??C and preserve a record of a vapor-rich environment. Recent data for El Indio and similar deposits show that at the commencement of the Sulfide Stage, 'condensation' of Cu-As-S sulfosalt melts with trace concentrations of Sb, Te, Bi, Ag and Au occurred at > 600 ??C following pyrite deposition. Euhedral quartz crystals were simultaneously deposited from the vapor phase during crystallization of the vapor-saturated melt occurs to Fe-tennantite with progressive non-equilibrium fractionation of heavy metals between melt-vapor and solid. Vugs containing a range of sulfides, sulfosalts and gold record the changing composition of the vapor. Published fluid inclusion and mineralogical data are reviewed in the context of geological relationships to establish boundary conditions through which to trace the expansion of magmatic vapor from source to surface and consequent alteration and mineralization. Initially heat loss from the vapor is high resulting in the formation of acid condensate permeating through the wallrock. This Sulfate Stage alteration effectively isolates the expansion of magmatic vapor in subsurface fracture arrays

  3. Metal (Ag/Ti-Containing Hydrogenated Amorphous Carbon Nanocomposite Films with Enhanced Nanoscratch Resistance: Hybrid PECVD/PVD System and Microstructural Characteristics

    Directory of Open Access Journals (Sweden)

    Marios Constantinou

    2018-03-01

    Full Text Available This study aimed to develop hydrogenated amorphous carbon thin films with embedded metallic nanoparticles (a–C:H:Me of controlled size and concentration. Towards this end, a novel hybrid deposition system is presented that uses a combination of Plasma Enhanced Chemical Vapor Deposition (PECVD and Physical Vapor Deposition (PVD technologies. The a–C:H matrix was deposited through the acceleration of carbon ions generated through a radio-frequency (RF plasma source by cracking methane, whereas metallic nanoparticles were generated and deposited using terminated gas condensation (TGC technology. The resulting material was a hydrogenated amorphous carbon film with controlled physical properties and evenly dispersed metallic nanoparticles (here Ag or Ti. The physical, chemical, morphological and mechanical characteristics of the films were investigated through X-ray reflectivity (XRR, Raman spectroscopy, Scanning Electron Microscopy (SEM, Atomic Force Microscopy (AFM, Transmission Electron Microscopy (TEM and nanoscratch testing. The resulting amorphous carbon metal nanocomposite films (a–C:H:Ag and a–C:H:Ti exhibited enhanced nanoscratch resistance (up to +50% and low values of friction coefficient (<0.05, properties desirable for protective coatings and/or solid lubricant applications. The ability to form nanocomposite structures with tunable coating performance by potentially controlling the carbon bonding, hydrogen content, and the type/size/percent of metallic nanoparticles opens new avenues for a broad range of applications in which mechanical, physical, biological and/or combinatorial properties are required.

  4. Bulk amorphous alloys: Preparation and properties of (Mg0.98Al0.02)x(Cu0.75Y0.25)100

    DEFF Research Database (Denmark)

    Eldrup, Morten Mostgaard; Pedersen, Allan Schrøder; Ohnuma, M.

    2000-01-01

    New bulk amorphous quaternary alloys of the composition (Mg1-xAlx)(60)Cu30Y10 (x = 0 - 0.17) were recently reported by the authors and preliminary results of the influence of Al content on the ability to form a bulk amorphous phase were presented. In the present note we extend this work to look...... for the influence of the Mg-Al content on the glass forming ability by studying a range of compositions, (Mg0.98Al0.02)(x)(Cu0.75Y0.25)(100-x) for x = 60 - 80 at.%. As previously, the alloys were prepared by a relatively simple technique, i.e. rapid cooling of the melt in a wedge-shaped copper mould. This method...... provides a range of cooling rates within a single ingot during the solidification that link the slowly and rapidly cooled microstructure for each alloy composition. Hence, the maximum thickness of the amorphous part of the cast material will be a measure of the glass forming ability (GFA) of the particular...

  5. Amorphous Silicon-Germanium Films with Embedded Nanocrystals for Thermal Detectors with Very High Sensitivity

    Directory of Open Access Journals (Sweden)

    Cesar Calleja

    2016-01-01

    Full Text Available We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR, which is a signature of the sensitivity in thermal detectors (microbolometers. Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9% K−1. Our results show that amorphous silicon-germanium films with embedded nanocrystals can be used as thermosensitive films in high performance infrared focal plane arrays (IRFPAs used in commercial thermal cameras.

  6. A crystallization study of amorphous Tex(Bi2Se3)1-x alloys with variation of the Se content

    International Nuclear Information System (INIS)

    Saxena, Manish

    2005-01-01

    Alloys of the Te x (Bi 2 Se 3 ) 1-x glass system, obtained using rapid quenching technique, have been characterized by calorimetric measurements and differential thermal analysis for different heating rates in this work. A systematic investigation of crystallization kinetics is carried out for the composition range in which amorphous alloys exhibit a large glass-forming ability in Se-based systems, thermal stability including in the temperature range between the glass transition temperature, T g , and crystallization temperature, T c , and the effect of ΔT c (=T c - T g ) at different heating rates for the formation of an amorphous single phase is evaluated from thermal analytical data. The thermal stability of these glasses is found to provide good control for forming these glasses with ease. This analysis helps to find the suitability of an alloy for use in phase transition optical memories/switches

  7. Research Progress on Fe-based Amorphous Coatings

    Directory of Open Access Journals (Sweden)

    LIANG Xiu-bing

    2017-09-01

    Full Text Available The latest research progresses on Fe-based amorphous coatings were reviewed. The typical alloy system and the classification of Fe-based amorphous coatings were clarified. The status, progress and development of the Fe-based amorphous coatings prepared by thermal spray processing and laser cladding process were discussed. The main mechanical properties and potential applications of the Fe-based amorphous coatings were also described. Furthermore, based on the main problems mentioned above, the future development of the Fe-based amorphous coatings was discussed, including the exploitation preparation technologies of high amorphous content of the Fe-based coatings, the development of the low cost and high performance Fe-based coating alloys system, the broadening application of Fe-based amorphous coatings, and so on.

  8. Hard coatings on magnesium alloys by sputter deposition using a pulsed d.c. bias voltage

    Energy Technology Data Exchange (ETDEWEB)

    Reiners, G. [Bundesanstalt fuer Materialforschung und -pruefung, Berlin (Germany); Griepentrog, M. [Bundesanstalt fuer Materialforschung und -pruefung, Berlin (Germany)

    1995-12-01

    An increasing use of magnesium-based light-metal alloys for various industrial applications was predicted in different technological studies. Companies in different branches have developed machine parts made of magnesium alloys (e.g. cars, car engines, sewing and knitting machines). Hence, this work was started to evaluate the ability of hard coatings obtained by physical vapour deposition (PVD) in combination with coatings obtained by electrochemical deposition to protect magnesium alloys against wear and corrosion. TiN hard coatings were deposited onto magnesium alloys by unbalanced magnetron sputter deposition. A bipolar pulsed d.c. bias voltage was used to limit substrate temperatures to 180 C during deposition without considerable loss of microhardness and adhesion. Adhesion, hardness and load-carrying capacity of TiN coatings deposited directly onto magnesium alloys are compared with the corresponding values of TiN coatings deposited onto substrates which had been coated electroless with an Ni-P alloy interlayer prior to the PVD. (orig.)

  9. Modification of anomalous deposition of Zn-Ni alloy by using tin additions

    Energy Technology Data Exchange (ETDEWEB)

    Zhou Zeyang; O`Keefe, T.J. [Missouri Univ., Rolla, MO (United States). Dept. of Metallurgical Engineering

    1997-11-25

    One of the common examples of anomalous deposition in electrolytic processing is the Zn-Ni alloy coating system. These alloys, in the range 10-15% Ni, are also of commercial interest in electrogalvanizing for protecting steel from corrosion while retaining good formability, weldability and paintability. The primary objective of this research was to obtain a better fundamental understanding of anomalous deposition and to identify ways to modify its influence. Specifically, the effects of tin additions on the composition, structure and surface morphology of Zn-Ni alloy deposits from electrolyte containing 80 g l{sup -1} Zn and 10 g l{sup -1} Ni were studied. Previous work had shown that low concentrations (parts per million) of cations such as antimony and arsenic were very effective in countering the anomalous deposition and increasing the relative nickel content of the deposits. Unfortunately, the morphology and current efficiency were adversely affected by use of these additives. It was found that the addition of tin also appreciably increased the nickel content of the alloy deposit, as well as giving smooth, dense deposits with a current efficiency of about 90%. The surface morphology of the deposits was correlated with the amount of tin added. The limited electrochemical impedance spectroscopy tests conducted showed that the low concentrations of tin did lower the charge transfer resistance of the reaction. Overall, the results were promising but considerably more research is needed to elucidate the basic factors that influence zinc alloy electrocrystallization mechanisms. (orig.) 27 refs.

  10. Facile synthesis of graphene on single mode fiber via chemical vapor deposition

    International Nuclear Information System (INIS)

    Zhang, C.; Man, B.Y.; Jiang, S.Z.; Yang, C.; Liu, M.; Chen, C.S.; Xu, S.C.; Feng, D.J.; Bi, D.; Liu, F.Y.; Qiu, H.W.

    2014-01-01

    Direct deposition of graphene film on the standard single mode fiber is offered using a Cu-vapor-assisted chemical vapor deposition system. The gas flow of H 2 and Ar before the growth process plays a crucial role for the direct deposition of the graphene film and the layers of the graphene can be controlled by the growth time. With a large gas flow, Cu atoms are carried off with the gas flow and hard to deposit on the surface of the single mode fiber before the growth process. Consequently, uniform graphene film is obtained in this case. On the contrary, with a lower one, Cu atoms is facile to deposit on the surface of the single mode fiber and form nanodots acting as active catalytic sites for the growth of carbon nanotubes. This method presents us a promising transfer-free technique for fabrication of the photonic applications.

  11. Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying

    DEFF Research Database (Denmark)

    Canulescu, Stela; Rechendorff, K.; Borca, C. N.

    2014-01-01

    The band structure of pure and Ti-alloyed anodic aluminum oxide has been examined as a function of Ti concentration varying from 2 to 20 at. %. The band gap energy of Ti-alloyed anodic Al oxide decreases with increasing Ti concentration. X-ray absorption spectroscopy reveals that Ti atoms...... are not located in a TiO2 unit in the oxide layer, but rather in a mixed Ti-Al oxide layer. The optical band gap energy of the anodic oxide layers was determined by vacuum ultraviolet spectroscopy in the energy range from 4.1 to 9.2 eV (300–135 nm). The results indicate that amorphous anodic Al2O3 has a direct...

  12. Thermal expansion of an amorphous alloy. Reciprocal-space versus real-space distribution functions

    International Nuclear Information System (INIS)

    Louzguine-Luzgin, Dmitri V.; Inoue, Akihisa

    2007-01-01

    This paper describes the relation between the change in the position of the first X-ray diffraction maximum in reciprocal space and the first maximum of the distribution function in real space for the Ge 50 Al 40 Cr 10 amorphous alloy. It is also shown that the first diffraction maximum of the interference function carries the most significant information about the interatomic distances in real space while the subsequent peaks of the interference function are responsible for the shoulders of the main peak of the real-space distribution function. The results are used to support validity of the method previously used to monitor thermal expansion of the glassy alloys using an X-ray diffraction profile

  13. Confined high-pressure chemical deposition of hydrogenated amorphous silicon.

    Science.gov (United States)

    Baril, Neil F; He, Rongrui; Day, Todd D; Sparks, Justin R; Keshavarzi, Banafsheh; Krishnamurthi, Mahesh; Borhan, Ali; Gopalan, Venkatraman; Peacock, Anna C; Healy, Noel; Sazio, Pier J A; Badding, John V

    2012-01-11

    Hydrogenated amorphous silicon (a-Si:H) is one of the most technologically important semiconductors. The challenge in producing it from SiH(4) precursor is to overcome a significant kinetic barrier to decomposition at a low enough temperature to allow for hydrogen incorporation into a deposited film. The use of high precursor concentrations is one possible means to increase reaction rates at low enough temperatures, but in conventional reactors such an approach produces large numbers of homogeneously nucleated particles in the gas phase, rather than the desired heterogeneous deposition on a surface. We report that deposition in confined micro-/nanoreactors overcomes this difficulty, allowing for the use of silane concentrations many orders of magnitude higher than conventionally employed while still realizing well-developed films. a-Si:H micro-/nanowires can be deposited in this way in extreme aspect ratio, small-diameter optical fiber capillary templates. The semiconductor materials deposited have ~0.5 atom% hydrogen with passivated dangling bonds and good electronic properties. They should be suitable for a wide range of photonic and electronic applications such as nonlinear optical fibers and solar cells. © 2011 American Chemical Society

  14. Influence of Co addition on the magnetocaloric effect of FeCoSiAlGaPCB amorphous alloys

    OpenAIRE

    Franco García, Victorino; Borrego Moro, Josefa María; Conde Amiano, Alejandro

    2006-01-01

    The FeCoSiAlGaPCB alloys can be prepared as bulk amorphous materials, with outstanding mechanical properties and increased electrical resistivity. These features can be beneficial for their application as a magnetic refrigerant. The influence of Co addition on the magnetic entropy change of the alloy has been studied. This compositional modification displaces the temperature of the peak entropy change closer to room temperature, but reduces the refrigerant capacity of the material...

  15. Amorphous superconductors

    International Nuclear Information System (INIS)

    Missell, F.P.

    1985-01-01

    We describe briefly the strong coupling superconductivity observed in amorphous alloys based upon simple metals. For transition metal alloys we discuss the behavior of the superconducting transition temperature T c , the upper critical field H (sub)c2 and the critical current J c . A survey of current problems is presented. (author) [pt

  16. Transient oxidation of Al-deposited Fe-Cr-Al alloy foil

    International Nuclear Information System (INIS)

    Andoh, A.

    1997-01-01

    The oxide phases formed on an Al-deposited Fe-Cr-Al alloy foil and an Fe-Cr-Al alloy foil of the same levels of Al and (La+Ce) contents, and their oxidation kinetics have been studied in air at 1173 and 1373 K using TGA, XRD and SEM. Al deposition promotes the growth of metastable aluminas (θ-Al 2 O 3 , γ-Al 2 O 3 ). Scales consisting of θ-Al 2 O 3 and a small amount of α-Al 2 O 3 develop on the Al-deposited foil at 1173 K and exhibit the whisker-type morphology. In the early stage of oxidation at 1373 K, thick scales consisting of θ-Al 2 O 3 and α-Al 2 O 3 grow rapidly on the Al-deposited foil. The transformation from θ-Al 2 O 3 to α-Al 2 O 3 is very fast, and the scales result in only α-Al 2 O 3 . In contrast, α-Al 2 O 3 scales containing a minor amount of FeAl 2 O 4 develop on the alloy foil. The growth rate of α-Al 2 O 3 scales on the Al-deposited foil is smaller than that on the alloy foil and very close to that on NiAl at 1373 K. (orig.)

  17. Self-catalytic growth of tin oxide nanowires by chemical vapor deposition process

    CSIR Research Space (South Africa)

    Thabethe, BS

    2013-01-01

    Full Text Available The authors report on the synthesis of tin oxide (SnO(sub2)) nanowires by a chemical vapor deposition (CVD) process. Commercially bought SnO nanopowders were vaporized at 1050°C for 30 minutes with argon gas continuously passing through the system...

  18. Fe-based bulk amorphous alloys with iron contents as high as 82 at%

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jin-Feng; Liu, Xue; Zhao, Shao-Fan; Ding, Hong-Yu [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Yao, Ke-Fu, E-mail: kfyao@tsinghua.edu.cn [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

    2015-07-15

    Fe-based bulk amorphous alloys (BAAs) with high Fe contents are advantageous due to their high saturation magnetization and low cost. However, preparing Fe-based BAAs with Fe contents higher than 80 at% is difficult due to their poor glass forming abilities (GFA). In this study, an Fe{sub 81}P{sub 8.5}C{sub 5.5}B{sub 2}Si{sub 3} BAA with a diameter of 1 mm and a saturation magnetization of 1.56 T was successfully prepared using the fluxing and copper mold casting methods. In addition, by introducing a small amount of elemental Mo to the alloy, an Fe{sub 82}Mo{sub 1}P{sub 6.5}C{sub 5.5}B{sub 2}Si{sub 3} BAA rod with a diameter of 1 mm, a high saturation magnetization of 1.59 T, a high yield stress of 3265 MPa, and a clear plasticity of 1.3% was prepared in the same way. The cost effectiveness and good magnetic properties of these newly-developed Fe-based BAAs with Fe contents as high as 82 at% would be advantageous and promising for industrial applications. - Highlights: • Novel Fe-based BAA with no other metallic element except 81 at% Fe was prepared. • Fe-based bulk amorphous alloy (BAA) with the highest Fe content (82%) was prepared. • Very high saturation magnetization of 1.59 T has been achieved. • A new thought for designing Fe-based BAA with high Fe content was provided.

  19. Magneto x-ray study of a gadolinium-iron amorphous alloy

    International Nuclear Information System (INIS)

    Keller, E.N.

    1985-01-01

    This work reports the measurement of the magnetic x-ray absorption of an amorphous Gd-Fe ferrimagnetic thin film. The Gd to Fe concentration in the sample was 1:4. The magnetic x-ray effect is the x-ray analog of magneto-optic absorption effects. Magneto x-ray effects arise when a solid has different indices of refraction for right and left circularly polarized x-rays. The difference in absorption of left and right circularly polarized x-rays is called the magneto x-ray absorption. This absorption is proportional to the net spin of the final state density of states. At the L3 edge, the main x-ray transition is from initial Gd(2p) core states to final Gd(5d) unoccupied states. Since the 5d states have a net spin polarization in ferromagnetic Gd, this experiment hoped to directly observe how that polarization changes for Gd in the alloy. The magneto x-ray absorption at the Gd L3 edge will be proportional to the sign and amount of the net spin polarization of the 5d electrons. The magnetic x-ray absorption coefficient was found to be at least 0.0005 smaller than the linear absorption coefficient at the Gd white line energy. This was measured for the amorphous alloy at room temperature. Lock-in techniques were used to obtain the small limit to the absorption. A simple model for the size of the magnetic x-ray absorption coefficient in Gd suggests that the Gd(5d) net spin polarization is less than 0.01 Bohr magnetons per atom

  20. Plasma-enhanced chemical vapor deposition for YBCO film fabrication of superconducting fault-current limiter

    Energy Technology Data Exchange (ETDEWEB)

    Jun, Byung Hyuk; Kim, Chan Joong

    2006-05-15

    Since the high-temperature superconductor of oxide type was founded, many researches and efforts have been performed for finding its application field. The YBCO superconducting film fabricated on economic metal substrate with uniform critical current density is considered as superconducting fault-current limiter (SFCL). There are physical and chemical processes to fabricate superconductor film, and it is understood that the chemical methods are more economic to deposit large area. Among them, chemical vapor deposition (CVD) is a promising deposition method in obtaining film uniformity. To solve the problems due to the high deposition temperature of thermal CVD, plasma-enhanced chemical vapor deposition (PECVD) is suggested. This report describes the principle and fabrication trend of SFCL, example of YBCO film deposition by PECVD method, and principle of plasma deposition.

  1. Short range ordering and microstructure property relationship in amorphous alloys

    Energy Technology Data Exchange (ETDEWEB)

    Shariq, A.

    2006-07-01

    A novel algorithm, ''Next Neighbourhood Evaluation (NNE)'', is enunciated during the course of this work, to elucidate the next neighbourhood atomic vicinity from the data, analysed using tomographic atom probe (TAP) that allows specifying atom positions and chemical identities of the next neighbouring atoms for multicomponent amorphous materials in real space. The NNE of the Pd{sub 55}Cu{sub 23}P{sub 22} bulk amorphous alloy reveals that the Pd atoms have the highest probability to be the next neighbours to each other. Moreover, P-P correlation corroborates earlier investigations with scattering techniques that P is not a direct next neighbour to another P atom. Analogous investigations on the Fe{sub 40}Ni{sub 40}B{sub 20} metallic glass ribbons, in the as quenched state and for a state heat treated at 350 C for 1 hour insinuate a pronounced elemental inhomogeneity for the annealed state, though, it also depicts glimpse of a slight inhomogeneity for B distribution even for the as quenched sample. Moreover, a comprehensive microstructural investigation has been carried out on the Zr{sub 53}Co{sub 23.5}Al{sub 23.5} glassy system. TEM and TAP investigations evince that the as cast bulk samples constitutes a composite structure of an amorphous phase and crystalline phase(s). The crystallization is essentially triggered at the mould walls due to heterogeneous nucleation. The three dimensional atomic reconstruction maps of the volume analysed by TAP reveal a complex stereological interconnected network of two phases. The phase that is rich in Zr and Al concentration is depleted in Co concentration while the phase that is rich in Co concentration is depleted both in Zr and Al. Zr{sub 53}Co{sub 23.5}Al{sub 23.5} glassy splat samples exhibit a single exothermic crystallization peak contrary to the as cast bulk sample with a different T{sub g} temperature. A single homogeneous amorphous phase revealed by TEM investigations depicts that the faster cooling

  2. Amorphous gallium oxide grown by low-temperature PECVD

    KAUST Repository

    Kobayashi, Eiji

    2018-03-02

    Owing to the wide application of metal oxides in energy conversion devices, the fabrication of these oxides using conventional, damage-free, and upscalable techniques is of critical importance in the optoelectronics community. Here, the authors demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaO:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200 °C. In this way, conformal films are deposited at high deposition rates, achieving high broadband transparency, wide band gap (3.5-4 eV), and low refractive index (1.6 at 500 nm). The authors link this low refractive index to the presence of nanoscale voids enclosing H, as indicated by electron energy-loss spectroscopy. This work opens the path for further metal-oxide developments by low-temperature, scalable and damage-free PECVD processes.

  3. Amorphous Silicon-Germanium Films with Embedded Nano crystals for Thermal Detectors with Very High Sensitivity

    International Nuclear Information System (INIS)

    Calleja, C.; Torres, A.; Rosales-Quintero, P.; Moreno, M.

    2016-01-01

    We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nano crystals in a plasma enhanced chemical vapor deposition (PECVD) reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR), which is a signature of the sensitivity in thermal detectors (micro bolometers). Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9%K -1 ). Our results show that amorphous silicon-germanium films with embedded nano crystals can be used as thermo sensitive films in high performance infrared focal plane arrays (IRFPAs) used in commercial thermal cameras.

  4. Otimização do banho eletrolítico da liga Fe-W-B resistente à corrosão Optimization of the electrolytic bath for electrodeposition of corrosion resistant Fe-W-B alloys

    Directory of Open Access Journals (Sweden)

    Renato Alexandre Costa de Santana

    2007-04-01

    Full Text Available A study on optimization of bath parameters for electrodeposition of Fe-W-B alloys from plating baths containing ammonia and citrate is reported. A 2³ full factorial design was successfully employed for experimental design analysis of the results. The corrosion resistance and amorphous character were evaluated. The bath conditions obtained for depositing the alloy with good corrosion resistance were: 0.01 M iron sulfate, 0.10 M sodium tungstate and 0.60 M ammonium citrate. The alloy was deposited at 12% current efficiency. The alloy obtained had Ecorr -0.841 V and Rp 1.463 x 10(4 Ohm cm². The deposit obtained under these conditions had an amorphous character and no microcracks were observed on its surface. Besides this, the bath conditions obtained for depositing the alloy with the highest deposition efficiency were: 0.09 M iron sulfate, 0.30 M sodium tungstate and 0.50 M ammonium citrate. The alloy was deposited at 50% current efficiency, with an average composition of 34 wt% W, 66 wt% Fe and traces of boron. The alloy obtained had Ecorr -0.800 V and Rp 1.895 x 10³ Ohm cm². Electrochemical corrosion tests verified that the Fe-W-B alloy deposited under both conditions had better corrosion resistance than Fe-Mo-B.

  5. Micro- and nano-surface structures based on vapor-deposited polymers

    Directory of Open Access Journals (Sweden)

    Hsien-Yeh Chen

    2017-07-01

    Full Text Available Vapor-deposition processes and the resulting thin polymer films provide consistent coatings that decouple the underlying substrate surface properties and can be applied for surface modification regardless of the substrate material and geometry. Here, various ways to structure these vapor-deposited polymer thin films are described. Well-established and available photolithography and soft lithography techniques are widely performed for the creation of surface patterns and microstructures on coated substrates. However, because of the requirements for applying a photomask or an elastomeric stamp, these techniques are mostly limited to flat substrates. Attempts are also conducted to produce patterned structures on non-flat surfaces with various maskless methods such as light-directed patterning and direct-writing approaches. The limitations for patterning on non-flat surfaces are resolution and cost. With the requirement of chemical control and/or precise accessibility to the linkage with functional molecules, chemically and topographically defined interfaces have recently attracted considerable attention. The multifunctional, gradient, and/or synergistic activities of using such interfaces are also discussed. Finally, an emerging discovery of selective deposition of polymer coatings and the bottom-up patterning approach by using the selective deposition technology is demonstrated.

  6. Preparation of hafnium carbide by chemical vapor deposition

    International Nuclear Information System (INIS)

    Hertz, Dominique.

    1974-01-01

    Hard, adhesive coatings of single-phase hafnium carbide were obtained by chemical vapor reaction in an atmosphere containing hafnium tetrachloride, methane and a large excess of hydrogen. By varying the gas phase composition and temperature the zones of formation of the different solid phases were studied and the growth of elementary hafnium and carbon deposits evaluated separately. The results show that the mechanism of hafnium carbide deposition does not hardly involve phenomene of homogeneous-phase methane decomposition or tetrachloride reduction by hydrogen unless the atmosphere is very rich or very poor in methane with respect to tetrachloride. However, hydrogen acting inversely on these two reactions, affects the stoichiometry of the substance deposited. The methane decomposition reaction is fairly slow, the reaction leading to hafnium carbide deposition is faster and that of tetrachloride reduction by hydrogen is quite fast [fr

  7. Crystallization and growth of Ni-Si alloy thin films on inert and on silicon substrates

    Science.gov (United States)

    Grimberg, I.; Weiss, B. Z.

    1995-04-01

    The crystallization kinetics and thermal stability of NiSi2±0.2 alloy thin films coevaporated on two different substrates were studied. The substrates were: silicon single crystal [Si(100)] and thermally oxidized silicon single crystal. In situ resistance measurements, transmission electron microscopy, x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy were used. The postdeposition microstructure consisted of a mixture of amorphous and crystalline phases. The amorphous phase, independent of the composition, crystallizes homogeneously to NiSi2 at temperatures lower than 200 °C. The activation energy, determined in the range of 1.4-2.54 eV, depends on the type of the substrate and on the composition of the alloyed films. The activation energy for the alloys deposited on the inert substrate was found to be lower than for the alloys deposited on silicon single crystal. The lowest activation energy was obtained for nonstoichiometric NiSi2.2, the highest for NiSi2—on both substrates. The crystallization mode depends on the structure of the as-deposited films, especially the density of the existing crystalline nuclei. Substantial differences were observed in the thermal stability of the NiSi2 compound on both substrates. With the alloy films deposited on the Si substrate, only the NiSi2 phase was identified after annealing to temperatures up to 800 °C. In the films deposited on the inert substrate, NiSi and NiSi2 phases were identified when the Ni content in the alloy exceeded 33 at. %. The effects of composition and the type of substrate on the crystallization kinetics and thermal stability are discussed.

  8. Ni-based amorphous alloy-coating for bipolar plate of PEM fuel cell by electrochemical plating

    International Nuclear Information System (INIS)

    Yamaura, S; Kim, S C; Inoue, A

    2013-01-01

    In this study, the Ni-Cr-P amorphous alloy-coated bipolar plates were produced by electro-plating on the Cu base plates with a flow field. The power generation tests of a single fuel cell with those Ni-Cr-P bipolar plates were conducted at 353 K. It was found that the single fuel cell with those Ni-Cr-P bipolar plates showed excellent I-V performance as well as that with the carbon graphite bipolar plates. It was also found that the single cell with those Ni-Cr-P bipolar plates showed better I-V performance than that with the Ni-P amorphous alloy-coated bipolar plates. Furthermore, the long-time operation test was conducted for 440 h with those Ni-Cr-P bipolar plates at the constant current density of 200 mA·cm −2 . As a result, it was found that the cell voltage gradually decreased at the beginning of the measurement before 300 h and then the voltage was kept constant after 300 h.

  9. Preparation of nickel-based amorphous alloys with finely dispersed lead and lead-bismuth particles and their superconducting properties

    International Nuclear Information System (INIS)

    Inoue, A.; Oguchi, M.; Harakawa, Y.; Masumoto, T.; Matsuzaki, K.

    1986-01-01

    The application of the melt-quenching technique to Ni-Si-B-Pb, Ni-P-B-Pb, Ni-Si-B-Pb-Bi and Ni-P-B-Pb-Bi alloys containing immiscible elements such as lead and bismuth has been tried and it has been found to result in the formation of a new type of material consisting of fine fcc Pb or hcp epsilon(Pb-Bi) + bct X(Pb-Bi) particles dispersed uniformly in the nickel-based amorphous matrix. The particle size and interparticle distance were 1 to 3 and 1 to 4 μm, respectively, for the lead phase, and less than 0.2 to 0.5 μm and 0.2 to 1.0 μm for the Pb-Bi phase. The uniform dispersion of such fine particles into the amorphous matrix was achieved in the composition range below about 6 at% Pb and 7 at% (Pb+Bi). Additionally, these amorphous alloys have been found to exhibit a superconductivity by the proximity effect of fcc Pb or epsilon(Pb-Bi) superconducting particles. The transition temperature Tsub(c) was in the range 6.8 to 7.5 K for the Ni-Si (or P)-B-Pb alloys and 8.6 to 8.8 K for the Ni-Si (or P)-B-Pb-Bi alloys. The upper critical field Hsub(c2) and the critical current density Jsub(c) for (Nisub(0.8)Psub(0.1)Bsub(0.1)) 95 Pb 3 Bi 2 at 4.2 K were, respectively, about 1.6 T and of the order of 7 x 10 7 Am -2 at zero applied field. (author)

  10. Structural and thermal investigations of an amorphous GaSe9 alloy using EXAFS, cumulant expansion, and reverse Monte Carlo simulations

    International Nuclear Information System (INIS)

    Siqueira, M. C.; Maia, R. N. A.; Araujo, R. M. T.; Machado, K. D.; Stolf, S. F.

    2015-01-01

    In this article, we investigated structural and thermal properties of an amorphous alloy of the Ga–Se system. The amorphous GaSe 9 alloy was produced by mechanical alloying and it was studied using EXAFS spectroscopy and cumulant expansion method. We also made reverse Monte Carlo simulations using the total structure factor S(K) obtained from x-ray diffraction and the EXAFS χ(k) oscillations on Se and Ga K edges as input data. Several parameters, such as average coordination numbers and interatomic distances, structural and thermal disorders, asymmetry of the partial distribution functions g ij (r), and Einstein and Debye temperatures, were determined. The g ij E (r) functions were reconstructed from the cumulants C 1 , C 2 , and C 3 obtained from the Einstein model, and they were compared to the g ij RMC (r) functions obtained from the simulations. The simulations also furnished the partial bond angle distribution functions Θ ijℓ (cosθ), which describe the angular distribution of bonds between first neighbors, and give information about the kind of structural units present in the alloy

  11. Coaxial carbon plasma gun deposition of amorphous carbon films

    Science.gov (United States)

    Sater, D. M.; Gulino, D. A.; Rutledge, S. K.

    1984-01-01

    A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.

  12. Coaxial carbon plasma gun deposition of amorphous carbon films

    International Nuclear Information System (INIS)

    Sater, D.M.; Gulino, D.A.

    1984-03-01

    A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented

  13. Growth of magnesium diboride films on 2 inch diameter copper discs by hybrid physical–chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Withanage, Wenura K.; Xi, X. X.; Nassiri, Alireza; Lee, Namhoon; Wolak, Matthäus A.; Tan, Teng; Welander, Paul B.; Franzi, Matthew; Tantawi, Sami; Kustom, Robert L.

    2017-02-16

    Magnesium diboride (MgB2) coating is a potential candidate to replace bulk niobium (Nb) for superconducting radio frequency cavities due to the appealing superconducting properties of MgB2. MgB2 coating on copper may allow cavity operation near 20–25 K as a result of the high transition temperature (T c) of MgB2 and excellent thermal conductivity of Cu. We have grown MgB2 films on 2 inch diameter Cu discs by hybrid physical–chemical vapor deposition for radio frequency characterization. Structural and elemental analyses showed a uniform MgB2 coating on top of a Mg–Cu alloy layer with occasional intrusion of Mg–Cu alloy regions. High T c values of around 37 K and high critical current density (J c) on the order of 107 A cm-2 at zero field were observed. Radio frequency measurements at 11.4 GHz confirmed a high T c and showed a quality factor (Q 0) much higher than for Cu and close to that of Nb.

  14. Growth of magnesium diboride films on 2 inch diameter copper discs by hybrid physical-chemical vapor deposition

    Science.gov (United States)

    Withanage, Wenura K.; Xi, X. X.; Nassiri, Alireza; Lee, Namhoon; Wolak, Matthäus A.; Tan, Teng; Welander, Paul B.; Franzi, Matthew; Tantawi, Sami; Kustom, Robert L.

    2017-04-01

    Magnesium diboride (MgB2) coating is a potential candidate to replace bulk niobium (Nb) for superconducting radio frequency cavities due to the appealing superconducting properties of MgB2. MgB2 coating on copper may allow cavity operation near 20-25 K as a result of the high transition temperature (T c) of MgB2 and excellent thermal conductivity of Cu. We have grown MgB2 films on 2 inch diameter Cu discs by hybrid physical-chemical vapor deposition for radio frequency characterization. Structural and elemental analyses showed a uniform MgB2 coating on top of a Mg-Cu alloy layer with occasional intrusion of Mg-Cu alloy regions. High T c values of around 37 K and high critical current density (J c) on the order of 107 A cm-2 at zero field were observed. Radio frequency measurements at 11.4 GHz confirmed a high T c and showed a quality factor (Q 0) much higher than for Cu and close to that of Nb.

  15. Towards tunable and multifunctional interfaces: Multicomponent amorphous alloys and bilayer stacks

    Science.gov (United States)

    Kast, Matthew G.

    Controlling the electronic structure and requisite charge transfer at and across interfaces is a grand challenge of materials science. Despite decades of research and numerous successes in the fields microelectronics and photovoltaics much work remains to be done. In many applications, whether they be in microelectronics, photovoltaics or display technology there is a demand for multiple functions at a single interface. Historically, existent materials were either discarded as an option due to known properties or tested with some application based figure of merit in mind. Following this, the quality of the material and/or the preparation of the surface/interface to which the material would be deposited was optimized. As the microelectronics and photovoltaics industries have matured, continued progress (faster, lower power transistors and more efficient, cheaper, abundant solar cells) will require new materials (possibly not previously existent) that are fundamentally better for their application than their highly optimized existent counter parts. The manifestation of this has been seen in the microelectronics field with introduction of hafnium silicates to replace silica (which had previously been monumentally successful) as the gate dielectrics for the most advanced transistors. Continued progress in efficient, cheap, abundant photovoltaics will require similar advances. Advances will be needed in the area of new abundant absorbers that can be deposited cheaply which result in materials with high efficiencies. In addition, selective contacts capable of extracting charge from efficient absorbers with low ohmic losses and low recombination rates will be needed. Presented here are two approaches to the multifunctional interface problem, first the use of amorphous alloys that open up the accessible composition space of thin films significantly and second the use of bilayers that loosen the requirements of a single film at an interface.

  16. High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yong [Iowa State Univ., Ames, IA (United States)

    2002-01-01

    Hydrogenated amorphous silicon germanium films (a-SiGe:H) and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large-scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert-gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. Preferential attachment of hydrogen to silicon, clustering of Ge and Si, and columnar structure and buried dihydride radicals make the film intolerably bad. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with a small amount of H2, was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, I-V curve, and quantum efficiency were characterized during the process of pursuing good materials. The microstructure of the a-(Si,Ge):H material was probed by Fourier-Transform Infrared spectroscopy. They found that the advantages of using helium as the main plasma species are: (1) high growth rate--the energetic helium ions break the reactive gas more efficiently than hydrogen ions; (2) homogeneous growth--heavy helium ions impinging on the surface promote the surface mobility of the reactive radicals, so that heteroepitaxy growth as clustering of Ge and Si, columnar structure are

  17. Rapid synthesis of tantalum oxide dielectric films by microwave microwave-assisted atmospheric chemical vapor deposition

    International Nuclear Information System (INIS)

    Ndiege, Nicholas; Subramanian, Vaidyanathan; Shannon, Mark A.; Masel, Richard I.

    2008-01-01

    Microwave-assisted chemical vapor deposition has been used to generate high quality, high-k dielectric films on silicon at high deposition rates with film thicknesses varying from 50 nm to 110 μm using inexpensive equipment. Characterization of the post deposition products was performed by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy and Raman spectroscopy. Film growth was determined to occur via rapid formation and accumulation of tantalum oxide clusters from tantalum (v) ethoxide (Ta(OC 2 H 5 ) 5 ) vapor on the deposition surface

  18. Magnetoconductance of amorphous Yx-Si1-x alloys near the metal-insulator transition

    International Nuclear Information System (INIS)

    Sanquer, M.; Tourbot, R.; Boucher, B.

    1989-01-01

    We have performed magnetoresistance experiments across the Metal-Insulator transition in amorphous Y x -Si 1-x alloys using very high fields (H = 40T) and very low temperatures (T = 0.05K). Different and unusual behaviours are observed and can be explained assuming that the electron-electron interaction contribution dominates at low fields and localization corrections appears at very high fields. This is the opposite situation compared to usual weak localization regime

  19. Size modulation of nanocrystalline silicon embedded in amorphous silicon oxide by Cat-CVD

    International Nuclear Information System (INIS)

    Matsumoto, Y.; Godavarthi, S.; Ortega, M.; Sanchez, V.; Velumani, S.; Mallick, P.S.

    2011-01-01

    Different issues related to controlling size of nanocrystalline silicon (nc-Si) embedded in hydrogenated amorphous silicon oxide (a-SiO x :H) deposited by catalytic chemical vapor deposition (Cat-CVD) have been reported. Films were deposited using tantalum (Ta) and tungsten (W) filaments and it is observed that films deposited using tantalum filament resulted in good control on the properties. The parameters which can affect the size of nc-Si domains have been studied which include hydrogen flow rate, catalyst and substrate temperatures. The deposited samples are characterized by X-ray diffraction, HRTEM and micro-Raman spectroscopy, for determining the size of the deposited nc-Si. The crystallite formation starts for Ta-catalyst around the temperature of 1700 o C.

  20. Large area IBAD deposition of Zn-alloys in the coil coating mode

    International Nuclear Information System (INIS)

    Wolf, G.K.; Preiss, G.; Muenz, R.; Guzman, L.

    2001-01-01

    In the last years many studies on IBAD coatings on metals and insulators for wear reduction and corrosion protection have been published. However the IBAD deposition of larger areas (>10 x 10 cm) is still a major problem. Therefore we have developed a coil coater running inside the IBAD deposition chamber and allowing very flexible deposition modes. Single layers, multilayers and alloys can be deposited under ion bombardment on substrates up to 30 by 40 cm or on metal and polymer strips 30 cm wide. A number of examples dealing with Zn-alloy coatings on low alloy steel are reported: pure Zn-coatings were compared with Zn/Ti-alloys Zn/Cr-alloys and Zn/Mn-alloys. In some cases also multilayers of the different metals were studied in the static and dynamic operation mode. The coatings had a thickness of 2-8 μm and their corrosion behaviour was investigated by salt spray tests. The microstructure of the coatings was studied by electron microscopy and EDX-depth profiling. The behaviour of the coating/substrate system is discussed in comparison with 'state-of-the-art' Zn-coatings produced by electrogalvanizing. Generally speaking the performance of the optimized coatings was as good as or better than the electrogalvanized standard