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Sample records for vanadium oxide film

  1. Lithium insertion in sputtered vanadium oxide film

    DEFF Research Database (Denmark)

    West, K.; Zachau-Christiansen, B.; Skaarup, S.V.

    1992-01-01

    were oxygen deficient compared to V2O5. Films prepared in pure argon were reduced to V(4) or lower. The vanadium oxide films were tested in solid-state lithium cells. Films sputtered in oxygen showed electrochemical properties similar to crystalline V2O5. The main differences are a decreased capacity...

  2. Preparation and characterization of vanadium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Monfort, O.; Plesch, G. [Comenius University of Bratislava, Faculty of Natural Sciences, Department of Inorganic Chemistry, 84215 Bratislava (Slovakia); Roch, T. [Comenius University of Bratislava, Faculty of Mathematics Physics and Informatics, Department of Experimental Physics, 84248 Bratislava (Slovakia)

    2013-04-16

    The thermotropic VO{sub 2} films have many applications, since they exhibit semiconductor-conductor switching properties at temperature around 70 grad C. Vanadium oxide thin films were prepared via sol-gel method. Spin coater was used to depose these films on Si/SiO{sub 2} and lime glass substrates. Thin films of V{sub 2}O{sub 5} can be reduced to metastable VO{sub 2} thin films at the temperature of 450 grad C under the pressure of 10{sup -2} Pa. These films are then converted to thermotropic VO{sub 2} at 700 grad C in argon under normal pressure. (authors)

  3. Oxidation phase growth diagram of vanadium oxides film fabricated by rapid thermal annealing

    Institute of Scientific and Technical Information of China (English)

    Tamura KOZO; Zheng-cao LI; Yu-quan WANG; Jie NI; Yin HU; Zheng-jun ZHANG

    2009-01-01

    Thermal evaporation deposited vanadium oxide films were annealed in air by rapid thermal annealing (RTP). By adjusting the annealing temperature and time, a series of vanadium oxide films with various oxidation phases and surface morphologies were fabricated, and an oxidation phase growth diagram was established. It was observed that different oxidation phases appear at a limited and continuous annealing condition range, and the morphologic changes are related to the oxidation process.

  4. Evaluation of the nanomechanical properties of vanadium and native oxide vanadium thin films prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Mamun, M.A.; Zhang, K.; Baumgart, H.; Elmustafa, A.A.

    2015-01-01

    Graphical abstract: - Highlights: • V films of 50, 75, 100 nm thickness were deposited on Si by RF magnetron sputtering. • We studied structural/mechanical properties by XRD, FE-SEM, AFM, and nanoindentation. • The hardness increased from 9.0 to 14.0 GPa for 100 to 50 nm. • The modulus showed no correlation with thickness or native oxide formation. • Native oxide formation resulted in grain enlargement and roughness reduction. - Abstract: Polycrystalline vanadium thin films of 50, 75, and 100 nm thickness were deposited by magnetron sputtering of a vanadium metal target of 2 inch diameter with 99.9% purity on native oxide covered Si substrates. One set of the fabricated samples were kept in moisture free environment and the other set was exposed to ambient air at room temperature for a long period of time that resulted in formation of native oxide prior to testing. The crystal structure and phase purity of the vanadium and the oxidized vanadium thin films were characterized by X-ray diffraction (XRD). The XRD results yield a preferential (1 1 0), and (2 0 0) orientation of the polycrystalline V films and (0 0 4) vanadium oxide (V 3 O 7 ). The vanadium films thickness were verified using field emission scanning electron microscopy and the films surface morphologies were inspected using atomic force microscopy (AFM). AFM images reveal surface roughness was observed to increase with increasing film thickness and also subsequent to oxidation at room temperature. The nanomechanical properties were measured by nanoindentation to evaluate the modulus and hardness of the vanadium and the oxidized vanadium thin films. The elastic modulus of the vanadium and the oxidized vanadium films was estimated as 150 GPa at 30% film thickness and the elastic modulus of the bulk vanadium target is estimated as 135 GPa. The measured hardness of the vanadium films at 30% film thickness varies between 9 and 14 GPa for the 100 and 50 nm films, respectively, exhibiting size effects

  5. Investigation of structural, morphological and electrical properties of APCVD vanadium oxide thin films

    International Nuclear Information System (INIS)

    Papadimitropoulos, Georgios; Trantalidis, Stelios; Tsiatouras, Athanasios; Vasilopoulou, Maria; Davazoglou, Dimitrios; Kostis, Ioannis

    2015-01-01

    Vanadium oxide films were chemically vapor deposited (CVD) on oxidized Si substrates covered with CVD tungsten (W) thin films and on glass substrates covered with indium tin oxide (ITO) films, using vanadium(V) oxy-tri-isopropoxide (C 9 H 21 O 4 V) vapors. X-ray diffraction (XRD) measurements showed that the deposited films were composed of a mixture of vanadium oxides; the composition was determined mainly by the deposition temperature and less by the precursor temperature. At temperatures up to 450 C the films were mostly composed by monoclinic VO 2 . Other peaks corresponding to various vanadium oxides were also observed. X-ray microanalysis confirmed the composition of the films. The surface morphology was studied with atomic force microscopy (AFM) and scanning electron microscopy (SEM). These measurements revealed that the morphology strongly depends on the used substrate and the deposition conditions. The well-known metal-insulator transition was observed near 75 C for films mostly composed by monoclinic VO 2 . Films deposited at 450 C exhibited two transitions one near 50 C and the other near 60 C possibly related to the presence of other vanadium phases or of important stresses in them. Finally, the vanadium oxide thin films exhibited significant sensory capabilities decreasing their resistance in the presence of hydrogen gas with response times in the order of a few seconds and working temperature at 40 C. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Chemical vapour deposition of vanadium oxide thermochromic thin films

    Science.gov (United States)

    Piccirillo, Clara

    Thermochromic materials change optical properties, such as transmittance or reflectance, with a variation in temperature. An ideal intelligent (smart) material will allow solar radiation in through a window in cold conditions, but reflect that radiation in warmer conditions. The variation in the properties is often associated with a phase change, which takes place at a definite temperature, and is normally reversible. Such materials are usually applied to window glass as thin films. This thesis presents the work on the development of thermochromic vanadium (IV) oxide (VO2) thin films - both undoped and doped with tungsten, niobium and gold nanoparticles - which could be employed as solar control coatings. The films were deposited using Chemical Vapour Deposition (CVD), using improved Atmospheric Pressure (APCVD), novel Aerosol Assisted (AACVD) and novel hybrid AP/AACVD techniques. The effects of dopants on the metalto- semiconductor transition temperature and transmittance/reflectance characteristics were also investigated. This work significantly increased the understanding of the mechanisms behind thermochromic behaviour, and resulted in thermochromic materials based on VO2 with greatly improved properties.

  7. Optical and electrochromic properties of sol-gel deposited Ti- doped vanadium oxide films

    International Nuclear Information System (INIS)

    Oezer, N.; Sabuncu, S.

    1997-01-01

    Because of the yellowish color, vanadium oxide films in the as deposited state is not as favorable as transparent coatings for most elector chromic devices. an interesting possibility to alter the yellowish colours is the doping with other non-absorbing metal oxides. Ti doped vanadium oxide films with various amounts of titanium were synthesized and investigated as transparent counter electrodes for electrochromic transmissive device application. Electrochromic titanium doped vanadium pentoxide (V sub 2 O 5) coatings were prepared by the sol-gel dip coating technique. The coating solutions were synthesized from vanadium tri(isopropoxide) precursors. X-ray diffraction (XRD) studies showed that the sol-gel deposited doped films heat treated at temperatures below 350 degree centigrade, were amorphous, whereas hose heat treated at higher temperatures were slight y crystalline. The optical and electrochemical properties of the Ti doped vanadium oxide films has been investigated in 0.1 m LiClO sub 4 propylene carbonate solution color changes by dropping were noted for all investigated films exhibits good electrochemical cycling (CV) measurements also showed that Ti doped V sub 2 O sub 5 films exhibits good electrochemical cycling reversibility, 'in situ' optical measurement revealed that those films exhibits good electrochemical cycling the spectra range 300 < lambda < 800 nm and change color between yellow and light green. The change in visible transmittance was 25 % for 5% Ti doped film. (author)

  8. Vanadium oxide thin films deposited on silicon dioxide buffer layers by magnetron sputtering

    International Nuclear Information System (INIS)

    Chen Sihai; Ma Hong; Wang Shuangbao; Shen Nan; Xiao Jing; Zhou Hao; Zhao Xiaomei; Li Yi; Yi Xinjian

    2006-01-01

    Thin films made by vanadium oxide have been obtained by direct current magnetron sputtering method on SiO 2 buffer layers. A detailed electrical and structural characterization has been performed on the deposited films by four-point probe method and scanning electron microscopy (SEM). At room temperature, the four-point probe measurement result presents the resistance of the film to be 25 kU/sheet. The temperature coefficient of resistance is - 2.0%/K. SEM image indicates that the vanadium oxide exhibits a submicrostructure with lamella size ranging from 60 nm to 300 nm. A 32 x 32-element test microbolometer was fabricated based on the deposited thin film. The infrared response testing showed that the response was 200 mV. The obtained results allow us to conclude that the vanadium oxide thin films on SiO 2 buffer layers is suitable for uncooled focal plane arrays applications

  9. Raman and XPS characterization of vanadium oxide thin films with temperature

    Energy Technology Data Exchange (ETDEWEB)

    Ureña-Begara, Ferran, E-mail: ferran.urena@uclouvain.be [Université catholique de Louvain, Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Louvain-la-Neuve (Belgium); Crunteanu, Aurelian [XLIM Research Institute, UMR 7252, CNRS/Université de Limoges, Limoges (France); Raskin, Jean-Pierre [Université catholique de Louvain, Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Louvain-la-Neuve (Belgium)

    2017-05-01

    Highlights: • Comprehensive study of the oxidation of VO{sub 2} thin films from R.T. up to 550 °C. • Phase changes and mixed-valence vanadium oxides formed during the oxidation process. • Reported Raman and XPS signatures for each vanadium oxide. • Monitoring of the current and resistance evolution at the surface of the films. • Oxidation model describing the evolution of the vanadium oxides and phase changes. - Abstract: The oxidation mechanisms and the numerous phase transitions undergone by VO{sub 2} thin films deposited on SiO{sub 2}/Si and Al{sub 2}O{sub 3} substrates when heated from room temperature (R.T.) up to 550 °C in air are investigated by Raman and X-ray photoelectron spectroscopy. The results show that the films undergo several intermediate phase transitions between the initial VO{sub 2} monoclinic phase at R.T. and the final V{sub 2}O{sub 5} phase at 550 °C. The information about these intermediate phase transitions is scarce and their identification is important since they are often found during the synthesis of vanadium dioxide films. Significant changes in the film conductivity have also been observed to occur associated to the phase transitions. In this work, current and resistance measurements performed on the surface of the films are implemented in parallel with the Raman measurements to correlate the different phases with the conductivity of the films. A model to explain the oxidation mechanisms and phenomena occurring during the oxidation of the films is proposed. Peak frequencies, full-width half-maxima, binding energies and oxidation states from the Raman and X-ray photoelectron spectroscopy experiments are reported and analyzed for all the phases encountered in VO{sub 2} films prepared on SiO{sub 2}/Si and Al{sub 2}O{sub 3} substrates.

  10. Vanadium oxide thin films and fibers obtained by acetylacetonate sol–gel method

    Energy Technology Data Exchange (ETDEWEB)

    Berezina, O.; Kirienko, D. [Department of Physical Engineering, Petrozavodsk State University, 185910 Petrozavodsk (Russian Federation); Pergament, A., E-mail: aperg@psu.karelia.ru [Department of Physical Engineering, Petrozavodsk State University, 185910 Petrozavodsk (Russian Federation); Stefanovich, G.; Velichko, A. [Department of Physical Engineering, Petrozavodsk State University, 185910 Petrozavodsk (Russian Federation); Zlomanov, V. [Department of Chemistry, Moscow State University, 119991 Moscow (Russian Federation)

    2015-01-01

    Vanadium oxide films and fibers have been fabricated by the acetylacetonate sol–gel method followed by annealing in wet nitrogen. The samples are characterized by X-ray diffraction and electrical conductivity measurements. The effects of a sol aging, the precursor decomposition and the gas atmosphere composition on the annealing process, structure and properties of the films are discussed. The two-stage temperature regime of annealing of amorphous films in wet nitrogen for formation of the well crystallized VO{sub 2} phase is chosen: 1) 25–550 °C and 2) 550–600 °C. The obtained films demonstrate the metal–insulator transition and electrical switching. Also, the effect of the polyvinylpyrrolidone additive concentration and electrospinning parameters on qualitative (absence of defects and gel drops) and quantitative (length and diameter) characteristics of vanadium oxide fibers is studied. - Highlights: • Vanadium oxide thin films and fibers are synthesized by sol–gel method. • The effect of annealing, atmosphere, time and electrospinning parameters is studied. • Produced VO{sub 2} structures exhibit metal–insulator transition and electrical switching.

  11. Vanadium Oxide Thin Films Alloyed with Ti, Zr, Nb, and Mo for Uncooled Infrared Imaging Applications

    Science.gov (United States)

    Ozcelik, Adem; Cabarcos, Orlando; Allara, David L.; Horn, Mark W.

    2013-05-01

    Microbolometer-grade vanadium oxide (VO x ) thin films with 1.3 Nb, Mo, and Zr using a second gun and radiofrequency (RF) reactive co-sputtering to probe the effects of the transition metals on the film charge transport characteristics. The results reveal that the temperature coefficient of resistance (TCR) and resistivity are unexpectedly similar for alloyed and unalloyed films up to alloy compositions in the ˜20 at.% range. Analysis of the film structures for the case of the 17% Nb-alloyed film by glancing-angle x-ray diffraction and transmission electron microscopy shows that the microstructure remains even with the addition of high concentrations of alloy metal, demonstrating the robust character of the VO x films to maintain favorable electrical transport properties for bolometer applications. Postdeposition thermal annealing of the alloyed VO x films further reveals improvement of electrical properties compared with unalloyed films, indicating a direction for further improvements in the materials.

  12. Structural, optical and electrochemical properties of F-doped vanadium oxide transparent semiconducting thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mousavi, M.; Khorrami, G.H. [University of Bojnord, Department of Physics, Faculty of Basic Science, Bojnord (Iran, Islamic Republic of); Kompany, A. [Ferdowsi University of Mashhad, Department of Physics, Mashhad (Iran, Islamic Republic of); Yazdi, S.T. [Payame Noor University (PNU), Department of Physics, Tehran (Iran, Islamic Republic of)

    2017-12-15

    In this study, F-doped vanadium oxide thin films with doping levels up to 60 at % were prepared by spray pyrolysis method on glass substrates. To measure the electrochemical properties, some films were deposited on fluorine-tin oxide coated glass substrates. The effect of F-doping on the structural, electrical, optical and electrochemical properties of vanadium oxide samples was investigated. The X-ray diffractographs analysis has shown that all the samples grow in tetragonal β-V{sub 2}O{sub 5} phase structure with the preferred orientation of [200]. The intensity of (200) peak belonging to β-V{sub 2}O{sub 5} phase was strongest in the undoped vanadium oxide film. The scanning electron microscopy images show that the samples have nanorod- and nanobelt-shaped structure. The size of the nanobelts in the F-doped vanadium oxide films is smaller than that in the pure sample and the width of the nanobelts increases from 30 to 70 nm with F concentration. With increasing F-doping level from 10 to 60 at %, the resistivity, the transparency and the optical band gap decrease from 111 to 20 Ω cm, 70 to 50% and 2.4 to 2.36 eV, respectively. The cyclic voltammogram (CV) results show that the undoped sample has the most extensive CV and by increasing F-doping level from 20 to 60 at %, the area of the CV is expanded. The anodic and cathodic peaks in F-doped samples are stronger. (orig.)

  13. Bipolar resistive switching in room temperature grown disordered vanadium oxide thin-film devices

    Science.gov (United States)

    Wong, Franklin J.; Sriram, Tirunelveli S.; Smith, Brian R.; Ramanathan, Shriram

    2013-09-01

    We demonstrate bipolar switching with high OFF/ON resistance ratios (>104) in Pt/vanadium oxide/Cu structures deposited entirely at room temperature. The SET (RESET) process occurs when negative (positive) bias is applied to the top Cu electrode. The vanadium oxide (VOx) films are amorphous and close to the vanadium pentoxide stoichiometry. We also investigated Cu/VOx/W structures, reversing the position of the Cu electrode, and found the same polarity dependence with respect to the top and bottom electrodes, which suggests that the bipolar nature is linked to the VOx layer itself. Bipolar switching can be observed at 100 °C, indicating that it not due to a temperature-induced metal-insulator transition of a vanadium dioxide second phase. We discuss how ionic drift can lead to the bipolar electrical behavior of our junctions, similar to those observed in devices based on several other defective oxides. Such low-temperature processed oxide switches could be of relevance to back-end or package integration processing schemes.

  14. A tunable hybrid metamaterial absorber based on vanadium oxide films

    International Nuclear Information System (INIS)

    Wen Qiye; Zhang Huaiwu; Yang Qinghui; Long Yang; Jing Yulan; Lin Yuan; Chen Zhi; Zhang Peixin

    2012-01-01

    A tunable hybrid metamaterial absorber (MA) in the microwave band was designed, fabricated and characterized. The hybrid MA was realized by incorporating a VO 2 film into the conventional resonant MA. By thermally triggering the insulator-metal phase transition of the VO 2 film, the impedance match condition was broken and a deep amplitude modulation of about 63.3% to the electromagnetic wave absorption was achieved. A moderate blue-shift of the resonance frequency was observed which is promising for practical applications. This VO 2 -based MA exhibits many advantages such as strong tunability, frequency agility, simple fabrication and ease of scaling to the terahertz band. (paper)

  15. Recovery of vanadium oxide

    International Nuclear Information System (INIS)

    Bates, C.P.; Clark, N.E.

    1985-01-01

    This invention relates to the recovery of vanadium oxide from molten metal. The invention provides a method for recovering vanadium oxide from molten metal, which includes passing oxygen and at least one coolant gas or shroud into the molten metal by way of at least one elongate lance. The invention also provides an arrangement for the recovery of vanadium oxide from molten metal, which includes at least one elongate lance extending into the molten metal. The lance is provided with at least one elongate bore extending therethrough. Means are provided to allow at least oxygen and at least one coolant gas to pass through the lance and into the molten metal

  16. Influence of Na diffusion on thermochromism of vanadium oxide films and suppression through mixed-alkali effect

    Energy Technology Data Exchange (ETDEWEB)

    Miller, Mark J.; Wang, Junlan, E-mail: junlan@u.washington.edu

    2015-10-15

    Highlights: • Vanadium oxide films were reactively sputtered on three types of glass substrates. • Na diffusion from soda-lime glass undesirably inhibited thermochromism. • Na diffusion was suppressed by replacing half of sodium in glass with potassium. • Mixed-alkali effect promotes thermochromic VO{sub 2} films on glass substrates. - Abstract: Vanadium(IV) oxide possesses a reversible first-order phase transformation near 68 °C. Potential applications of the material include advanced optical devices and thermochromic smart windows. In this study, vanadium oxide films were grown on three types of glass substrates using reactive DC magnetron sputtering and were then annealed in air. The substrates were characterized with energy-dispersive X-ray spectroscopy, and the films were characterized with X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and UV-Vis-NIR spectrophotometry. The results show that the composition of the substrate has a major impact on the microstructure and optical properties of the deposited films. Sodium (Na) in the glass can undesirably inhibit thermochromism; however, replacing half of the Na with potassium (K) suppresses the Na diffusion and promotes the nucleation of pure VO{sub 2} with superior thermochromic functionality. The improved performance is attributed to the mixed-alkali effect between Na and K. These findings are both scientifically and technologically important since soda (Na{sub 2}O) is an essential flux material in glass products such as windows.

  17. Annealing effects on the structural and optical properties of vanadium oxide film obtained by the hot-filament metal oxide deposition technique (HFMOD)

    Energy Technology Data Exchange (ETDEWEB)

    Scarminio, Jair; Silva, Paulo Rogerio Catarini da, E-mail: scarmini@uel.br, E-mail: prcsilva@uel.br [Universidade Estadual de Londrina (UEL), PR (Brazil). Departamento de Fisica; Gelamo, Rogerio Valentim, E-mail: rogelamo@gmail.com [Universidade Federal do Triangulo Mineiro (UFTM), Uberaba, MG (Brazil); Moraes, Mario Antonio Bica de, E-mail: bmoraes@mailhost.ifi.unicamp.br [Universidade Estadual de Campinas (UNICAMP), SP (Brazil)

    2017-01-15

    Vanadium oxide films amorphous, nonstoichiometric and highly absorbing in the optical region were deposited on ITO-coated glass and on silicon substrates, by the hot-filament metal oxide deposition technique (HFMOD) and oxidized by ex-situ annealing in a furnace at 200, 300, 400 and 500 deg C, under an atmosphere of argon and rarefied oxygen. X-ray diffraction, Raman and Rutherford backscattering spectroscopy as well as optical transmission were employed to characterize the amorphous and annealed films. When annealed at 200 and 300 deg C the as-deposited opaque films become transparent but still amorphous. Under treatments at 400 and 500 deg C a crystalline nonstoichiometric V{sub 2}O{sub 5} structure is formed. All the annealed films became semiconducting, with their optical absorption coefficients changing with the annealing temperature. An optical gap of 2.25 eV was measured for the films annealed at 400 and 500 deg C. The annealing in rarefied oxygen atmosphere proved to be a useful and simple ex-situ method to modulate the structural and optical properties of vanadium oxide films deposited by HFMOD technique. This technique could be applied to other amorphous and non-absorbing oxide films, replacing the conventional and sometimes expensive method of modulate desirable film properties by controlling the film deposition parameters. Even more, the HFMOD technique can be an inexpensive alternative to deposit metal oxide films. (author)

  18. Preparation and characterization of graphene-based vanadium oxide composite semiconducting films with horizontally aligned nanowire arrays

    International Nuclear Information System (INIS)

    Jung, Hye-Mi; Um, Sukkee

    2016-01-01

    Highly oriented crystalline hybrid thin films primarily consisting of Magnéli-phase VO 2 and conductive graphene nanoplatelets are fabricated by a sol–gel process via dipping pyrolysis. A combination of chemical, microstructural, and electrical analyses reveals that graphene oxide (GO)-templated vanadium oxide (VO x ) nanocomposite films exhibit a vertically stacked multi-lamellar nanostructure consisting of horizontally aligned vanadium oxide nanowire (VNW) arrays along the (hk0) set of planes on a GO template, with an average crystallite size of 41.4 Å and a crystallographic tensile strain of 0.83%. In addition, GO-derived VO x composite semiconducting films, which have an sp 3 /sp 2 bonding ratio of 0.862, display thermally induced electrical switching properties in the temperature range of − 20 °C to 140 °C, with a transition temperature of approximately 65 °C. We ascribe these results to the use of GO sheets, which serve as a morphological growth template as well as an electrochemically tunable platform for enhancing the charge-carrier mobility. Moreover, the experimental studies demonstrate that graphene-based Magnéli-phase VO x composite semiconducting films can be used in advanced thermo-sensitive smart sensing/switching applications because of their outstanding thermo-electrodynamic properties and high surface charge density induced by the planar-type VNWs. - Highlights: • VO x -graphene oxide composite (G/VO x ) films were fabricated by sol–gel process. • The G/VO x films mainly consisted of Magnéli-phase VO 2 and reduced graphene sheets. • The G/VO x films exhibited multi-lamellar textures with planar VO x nanowire arrays. • The G/VO x films showed the thermo-sensitive electrical switching properties. • Effects of GOs on the electrical characteristics of the G/VO x films were discussed.

  19. Modification of the Properties of Vanadium Oxide Thin Films by Plasma-Immersion Ion Implantation

    Directory of Open Access Journals (Sweden)

    Sergey Burdyukh

    2018-01-01

    Full Text Available The paper describes the effect of doping with hydrogen and tungsten by means of plasma-immersion ion implantation (PIII on the properties of vanadium dioxide and hydrated vanadium pentoxide films. It is shown that the parameters of the metal-insulator phase transition in VO2 thin films depend on the hydrogen implantation dose. Next, we explore the effect of PIII on composition, optical properties, and the internal electrochromic effect (IECE in V2O5·nH2O films. The variations in the composition and structure caused by the hydrogen insertion, as well as those caused by the electrochromic effect, are studied by nuclear magnetic resonance, thermogravimetry, Raman spectroscopy, and X-ray structural analysis. It is shown that the ion implantation-induced hydrogenation can substantially enhance the manifestation and performance of the IECE in V2O5 xerogel films. Finally, the effect of PIII-assisted doping with W on the parameters of electrical switching in Au/V2O5·nH2O/Au sandwich structures is examined. It is shown that implanting small tungsten doses improves the switching parameters after forming. When implanting large doses, switching is observed without electroforming, and if electroforming is applied, the switching effect, on the contrary, disappears.

  20. Rf-sputtered vanadium oxide thin films: effect of oxygen partial pressure on structural and electrochemical properties

    CERN Document Server

    Park, Y J; Ryu, K S; Chang, S H; Park, S C; Yoon, S M; Kim, D K

    2001-01-01

    Vanadium oxide thin films with thickness of about 2000 A have been prepared by radio frequency sputter deposition using a V sub 2 O sub 5 target in a mixed argon and oxygen atmosphere with different Ar/O sub 2 ratio ranging from 99/1 to 90/10. X-ray diffraction and X-ray absorption near edge structure spectroscopic studies show that the oxygen content higher than 5% crystallizes a stoichiometric V sub O sub 5 phase, while oxygen deficient phase is formed in the lower oxygen content. The oxygen content in the mixed Ar + O sub 2 has a significant influence on electrochemical lithium insertion/deinsertion property. The discharge-charge capacity of vanadium oxide film increases with increasing the reactive oxygen content. The V sub O sub 5 film deposited at the Ar/O sub 2 ratio of 90/10 exhibits high discharge capacity of 100 mu Ah/cm sup 2 -mu m along with good cycle performance.

  1. Influence of oxygen flow rate on metal-insulator transition of vanadium oxide thin films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Xu; Liu, Xinkun; Li, Haizhu; Huang, Mingju [Henan University, Key Lab of Informational Opto-Electronical Materials and Apparatus, School of Physics and Electronics, Kaifeng (China); Zhang, Angran [South China Normal University, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, Guangzhou (China)

    2017-03-15

    High-quality vanadium oxide (VO{sub 2}) films have been fabricated on Si (111) substrates by radio frequency (RF) magnetron sputtering deposition method. The sheet resistance of VO{sub 2} has a significant change (close to 5 orders of magnitude) in the process of the metal-insulator phase transition (MIT). The field emission-scanning electron microscope (FE-SEM) results show the grain size of VO{sub 2} thin films is larger with the increase of oxygen flow. The X-ray diffraction (XRD) results indicate the thin films fabricated at different oxygen flow rates grow along the (011) crystalline orientation. As the oxygen flow rate increases from 3 sccm to 6 sccm, the phase transition temperature of the films reduces from 341 to 320 K, the width of the thermal hysteresis loop decreases from 32 to 9 K. The thin films fabricated in the condition of 5 sccm have a high temperature coefficient of resistance (TCR) -3.455%/K with a small resistivity of 2.795 ρ/Ω cm. (orig.)

  2. Electro-optical evaluation of tungsten oxide and vanadium pentoxide thin films for modeling an electrochromic device

    Directory of Open Access Journals (Sweden)

    H Najafi Ashtiani

    2015-01-01

    Full Text Available In this study, tungsten oxide and vanadium oxide electrochromic thin films were placed in vacuum and in a thickness of 200 nm on a transparent conductive substrate of SnO2:F using the physical method of thermal evaporation. Then they were studied for the optical characteristics in the wavelength range from 400 to 700 nm and for their electrical potentials in the range form +1.5 to -1.5 volts. The films were post heated in order to assess changes in energy gap with temperature, at temperatures120 , 300 and 500°C. Refractive and extinction coefficients and the transition type of films in the visible light range and in the thickness of 200 nm were determined and measured. X-ray diffraction pattern and SEM images and cyclic Voltammetry of layers were also studied. The results of this study due to the deposition of layers, the layer thickness selected, the type of substrate, the range of annealing temperatures and selected electrolyte were in full compliance with the works of other researchers [1,2,3]. Therefore, these layers with features such as crystal structure, refractive and even extinction coefficients in the range of visible light, the appropriate response of chromic switch in the replication potential, good adhesion to the substrate, and the high amount of optical transmition and so on, prove useful to be used in an electrochromic device

  3. Vanadium and molybdenum oxide thin films on Au(111). Growth and surface characterization

    Energy Technology Data Exchange (ETDEWEB)

    Guimond, Sebastien

    2009-06-04

    The growth and the surface structure of well-ordered V{sub 2}O{sub 3}, V{sub 2}O{sub 5} and MoO{sub 3} thin films have been investigated in this work. These films are seen as model systems for the study of elementary reaction steps occurring on vanadia and molybdena-based selective oxidation catalysts. It is shown that well-ordered V{sub 2}O{sub 3}(0001) thin films can be prepared on Au(111). The films are terminated by vanadyl groups which are not part of the V{sub 2}O{sub 3} bulk structure. Electron irradiation specifically removes the oxygen atoms of the vanadyl groups, resulting in a V-terminated surface. The fraction of removed vanadyl groups is controlled by the electron dose. Such surfaces constitute interesting models to probe the relative role of both the vanadyl groups and the undercoordinated V ions at the surface of vanadia catalysts. The growth of well-ordered V{sub 2}O{sub 5}(001) and MoO{sub 3}(010) thin films containing few point defects is reported here for the first time. These films were grown on Au(111) by oxidation under 50 mbar O{sub 2} in a dedicated high pressure cell. Contrary to some of the results found in the literature, the films are not easily reduced by annealing in UHV. This evidences the contribution of radiation and surface contamination in some of the reported thermal reduction experiments. The growth of ultrathin V{sub 2}O{sub 5} and MoO{sub 3} layers on Au(111) results in formation of interface-specific monolayer structures. These layers are coincidence lattices and they do not correspond to any known oxide bulk structure. They are assumed to be stabilized by electronic interaction with Au(111). Their formation illustrates the polymorphic character and the ease of coordination units rearrangement which are characteristic of both oxides. The formation of a second layer apparently precedes the growth of bulk-like crystallites for both oxides. This observation is at odds with a common assumption that crystals nucleate as soon as a

  4. Vanadium and molybdenum oxide thin films on Au(111). Growth and surface characterization

    International Nuclear Information System (INIS)

    Guimond, Sebastien

    2009-01-01

    The growth and the surface structure of well-ordered V 2 O 3 , V 2 O 5 and MoO 3 thin films have been investigated in this work. These films are seen as model systems for the study of elementary reaction steps occurring on vanadia and molybdena-based selective oxidation catalysts. It is shown that well-ordered V 2 O 3 (0001) thin films can be prepared on Au(111). The films are terminated by vanadyl groups which are not part of the V 2 O 3 bulk structure. Electron irradiation specifically removes the oxygen atoms of the vanadyl groups, resulting in a V-terminated surface. The fraction of removed vanadyl groups is controlled by the electron dose. Such surfaces constitute interesting models to probe the relative role of both the vanadyl groups and the undercoordinated V ions at the surface of vanadia catalysts. The growth of well-ordered V 2 O 5 (001) and MoO 3 (010) thin films containing few point defects is reported here for the first time. These films were grown on Au(111) by oxidation under 50 mbar O 2 in a dedicated high pressure cell. Contrary to some of the results found in the literature, the films are not easily reduced by annealing in UHV. This evidences the contribution of radiation and surface contamination in some of the reported thermal reduction experiments. The growth of ultrathin V 2 O 5 and MoO 3 layers on Au(111) results in formation of interface-specific monolayer structures. These layers are coincidence lattices and they do not correspond to any known oxide bulk structure. They are assumed to be stabilized by electronic interaction with Au(111). Their formation illustrates the polymorphic character and the ease of coordination units rearrangement which are characteristic of both oxides. The formation of a second layer apparently precedes the growth of bulk-like crystallites for both oxides. This observation is at odds with a common assumption that crystals nucleate as soon as a monolayer is formed dur-ing the preparation of supported vanadia

  5. XPS study of vanadium surface oxidation by oxygen ion bombardment

    Czech Academy of Sciences Publication Activity Database

    Alov, N.; Kutsko, D.; Spirovová, Ilona; Bastl, Zdeněk

    2006-01-01

    Roč. 600, č. 8 (2006), s. 1628-1631 ISSN 0039-6028 R&D Projects: GA ČR GA104/04/0467 Institutional research plan: CEZ:AV0Z40400503 Keywords : vanadium oxide * oxide film * ion-beam oxidation * X-ray photoelectron spectroscopy Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.880, year: 2006

  6. Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices

    Science.gov (United States)

    Chen, Kai-Huang; Cheng, Chien-Min; Kao, Ming-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Sean; Su, Feng-Yi

    2017-04-01

    The bipolar switching properties and electrical conduction mechanism of vanadium oxide thin-film resistive random-access memory (RRAM) devices obtained using a rapid thermal annealing (RTA) process have been investigated in high-resistive status/low-resistive status (HRS/LRS) and are discussed herein. In addition, the resistance switching properties and quality improvement of the vanadium oxide thin-film RRAM devices were measured by x-ray diffraction (XRD) analysis, x-ray photoelectron spectrometry (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage ( I- V) measurements. The activation energy of the hopping conduction mechanism in the devices was investigated based on Arrhenius plots in HRS and LRS. The hopping conduction distance and activation energy barrier were obtained as 12 nm and 45 meV, respectively. The thermal annealing process is recognized as a candidate method for fabrication of thin-film RRAM devices, being compatible with integrated circuit technology for nonvolatile memory devices.

  7. Effect of substrate temperature on thermochromic vanadium dioxide thin films sputtered from vanadium target

    Science.gov (United States)

    Madiba, I. G.; Kotsedi, L.; Ngom, B. D.; Khanyile, B. S.; Maaza, M.

    2018-05-01

    Vanadium dioxide films have been known as the most promising thermochromic thin films for smart windows which self-control the solar radiation and heat transfer for energy saving, comfort in houses and automotives. Such an attractive technological application is due to the fact that vanadium dioxide crystals exhibit a fast semiconductor-to-metal phase transition at a transition temperature Tc of about 68 °C, together with sharp optical changes from high transmitive to high reflective coatings in the IR spectral region. The phase transition has been associated with the nature of the microstructure, stoichiometry and stresses related to the oxide. This study reports on the effect of the crystallographic quality controlled by the substrate temperature on the thermochromic properties of vanadium dioxide thin films synthesized by reactive radio frequency inverted cylindrical magnetron sputtering from vanadium target. The reports results are based on X-ray diffraction, Atomic force microscopy, and UV-Visible spectrophotometer. The average crystalline grain size of VO2 increases with the substrate temperature, inducing stress related phenomena within the films.

  8. Oxidation of methyl heterocyclic compounds on vanadium oxide catalysts

    International Nuclear Information System (INIS)

    Shimanskaya, M.V.; Lejtis, L.A.; Iovel', I.G.; Gol'dberg, Yu.Sh.; Skolmejstere, R.A.; Golender, L.O.

    1985-01-01

    Data on vapor-phase oxidation of methyl derivatives of thiophene, Δ 2 - thiazo line, pyridine, pyrazine and pyramidine on oxide vanadium-molybdenum catalysts to corresponding heterylaldehydes are generalized. The dependence of catalytic properties of oxide vanadium-molybdenum systems in oxidation reactions of methylheterocyclic compounds on V:Mo ratio in the catalyst is revealed. It is shown that heterocyclic compounds are coordinated by a heteroatom on Lewis centres of V-Mo-O-catalyst primarily with partially reduced vanadium ions

  9. Methods for making lithium vanadium oxide electrode materials

    Science.gov (United States)

    Schutts, Scott M.; Kinney, Robert J.

    2000-01-01

    A method of making vanadium oxide formulations is presented. In one method of preparing lithium vanadium oxide for use as an electrode material, the method involves: admixing a particulate form of a lithium compound and a particulate form of a vanadium compound; jet milling the particulate admixture of the lithium and vanadium compounds; and heating the jet milled particulate admixture at a temperature below the melting temperature of the admixture to form lithium vanadium oxide.

  10. Positron lifetime in vanadium oxide bronzes

    International Nuclear Information System (INIS)

    Dryzek, J.; Dryzek, E.

    2003-01-01

    The positron lifetime (PL) and Doppler broadening (DB) of annihilation line measurements have been performed in vanadium oxide bronzes M x V 2 O 5 . The dependence of these annihilation characteristics on the kind and concentration of the metal M donor has been observed. In the PL spectrum only one lifetime component has been detected in all studied bronzes. The results indicate the positron localization in the structural tunnels present in the crystalline lattice of the vanadium oxide bronzes. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Vanadium

    Science.gov (United States)

    Kelley, Karen D.; Scott, Clinton T.; Polyak, Désirée E.; Kimball, Bryn E.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

    2017-12-19

    sands, and oil shales may be important future sources.Vanadium occurs in one of four oxidation states in nature: +2, +3, +4, and +5. The V3+ ion has an octahedral radius that is almost identical to that of (Fe3+) and (Al3+) and, therefore, it substitutes in ferromagnesian minerals. During weathering, much of the vanadium may partition into newly formed clay minerals, and it either remains in the +3 valence state or oxidizes to the +4 valence state, both of which are relatively insoluble. If erosion is insignificant but chemical leaching is intense, the residual material may be enriched in vanadium, as are some bauxites and laterites. During the weathering of igneous, residual, or sedimentary rocks, some vanadium oxidizes to the +5 valence state, especially in the intensive oxidizing conditions that are characteristic of arid climates.The average contents of vanadium in the environment are as follows: soils [10 to 500 parts per million (ppm)]; streams and rivers [0.2 to 2.9 parts per billion (ppb)]; and coastal seawater (0.3 to 2.8 ppb). Concentrations of vanadium in soils (548 to 7,160 ppm) collected near vanadium mines in China, the Czech Republic, and South Africa are many times greater than natural concentrations in soils. Additionally, if deposits contain sulfide minerals such as chalcocite, pyrite, and sphalerite, high levels of acidity may be present if sulfide dissolution is not balanced by the presence of acid-neutralizing carbonate minerals. Some of the vanadium-bearing deposit types, particularly some SSV and black-shale deposits, contain appreciable amounts of carbonate minerals, which lowers the acid-generation potential.Vanadium is a micronutrient with a postulated requirement for humans of less than 10 micrograms per day, which can be met through dietary intake. Primary and secondary drinking water regulations for vanadium are not currently in place in the United States. Vanadium toxicity is thought to result from an intake of more than 10 to 20 milligrams

  12. Oxidation of vanadium metal in oxygen plasma and their characterizations

    Science.gov (United States)

    Sharma, Rabindar Kumar; Singh, Megha; Kumar, Prabhat; Reddy, G. B.

    2015-09-01

    In this report, the role of oxygen plasma on oxidation of vanadium (V) metal and the volatilization of its oxides has been studied as a function of source (V metal strip) temperature (Tss) and oxygen partial pressure (PO2). The presence of O2-plasma not only enhances the oxidation rate but also ficilitates in transport of oxide molecules from metal to substrate, as confirmed by the simultanous deposition of oxide film onto substrate. Both the oxidized metal strips and oxide films deposited on substrates are characterized separately. The structural and vibrational results evidence the presence of two different oxide phases (i.e. orthorhombic V2O5 and monocilinic V O2) in oxide layers formed on V metal strips, whereas the oxide films deposited on substrates exhibit only orthorhombic phase (i.e. V2O5). The decrease in peak intensities recorded from heated V metal strips on increasing Tss points out the increment in the rate of oxide volatilization, which also confirms by the oxide layer thickness measurements. The SEM results show the noticeable surface changes on V-strips as the function of Tss and PO2 and their optimum values are recorded to be 500 ˚ C and 7.5 × 10-2 Torr, respectively to deposit maximum thick oxide film on substrate. The formation of microcracks on oxidized V-strips, those responsible to countinue oxidation is also confirmed by SEM results. The compositional study of oxide layers formed on V-strips, corroborates their pureness and further assures about the existence of mixed oxide phases. The effect of oxygen partial pressure on oxidation of V-metal has also been discussed in the present report. All the results are well in agreement to each other.

  13. Fluctuation conductivity of thin superconductive vanadium films

    International Nuclear Information System (INIS)

    Dmitrenko, I.M.; Sidorenko, A.S.; Fogel, N.Y.

    1982-01-01

    Resistive transitions into the superconductive state are studied in thin [d >T/sub c/ the experimental data on the excess conductivity of the films agree qualitatively and quantitively with Aslamazov--Larkin theory. There is no Maki--Thompson contribution to fluctuation conductivity. Near T/sub c/ the excess conductivity sigma' changes exponentially with temperature in accordance with the predictions of the theory of the critical fluctuations of the order parameter. The values of the effective charge carrier mass defined from data on sigma' for the low fluctuation and critical fluctuation regions differ markedly. This difference is within the spread of effective masses for various charge carrier groups already known for vanadium. Causes of the difference in resistive behavior for the regions T >T/sub c/ are considered

  14. Fluorine doped vanadium dioxide thin films for smart windows

    International Nuclear Information System (INIS)

    Kiri, Pragna; Warwick, Michael E.A.; Ridley, Ian; Binions, Russell

    2011-01-01

    Thermochromic fluorine doped thin films of vanadium dioxide were deposited from the aerosol assisted chemical vapour deposition reaction of vanadyl acetylacetonate, ethanol and trifluoroacetic acid on glass substrates. The films were characterised with scanning electron microscopy, variable temperature Raman spectroscopy and variable temperature UV/Vis spectroscopy. The incorporation of fluorine in the films led to an increase in the visible transmittance of the films whilst retaining the thermochromic properties. This approach shows promise for improving the aesthetic properties of vanadium dioxide thin films.

  15. Atomic layer deposition of VO{sub 2} films with Tetrakis-dimethyl-amino vanadium (IV) as vanadium precursor

    Energy Technology Data Exchange (ETDEWEB)

    Lv, Xinrui [Key Laboratory of Inorganic Coating Materials CAS, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Cao, Yunzhen, E-mail: yzhcao@mail.sic.ac.cn [Key Laboratory of Inorganic Coating Materials CAS, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800 (China); Yan, Lu; Li, Ying; Song, Lixin [Key Laboratory of Inorganic Coating Materials CAS, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800 (China)

    2017-02-28

    Highlights: • VO{sub 2} film was easily deposited by ALD using novel vanadium precursor V(NMe{sub 2}){sub 4}. • Deposition and annealing condition were systematically investigated. • Comparable transition properties of VO{sub 2} film on resistance and spectral transmittance were studied. - Abstract: VO{sub 2} thin films have been grown on Si(100) (VO{sub 2}/Si) and fused silica substrates (VO{sub 2}/SiO{sub 2}) by atomic layer deposition (ALD) using tetrakis-dimethyl-amino vanadium (IV) (TDMAV) as a novel vanadium precursor and water as reactant gas. The quartz crystal microbalance (QCM) measurement was performed to study the ALD process of VO{sub 2} thin film deposition, and a constant growth rate of about 0.95 Å/cycle was obtained at the temperature range of 150–200 °C. XRD measurement was performed to study the influence of deposition temperature and post-annealing condition on the crystallization of VO{sub 2} films, which indicated that the films deposited between 150 and 200 °C showed well crystallinity after annealing at 475 °C for 100 min in Ar atmosphere. XPS measurement verified that the vanadium oxidation state was 4+ for both as-deposited film and post-annealed VO{sub 2}/Si film. AFM was applied to study the surface morphology of VO{sub 2}/Si films, which showed a dense polycrystalline film with roughness of about 1 nm. The resistance of VO{sub 2}/Si films deposited between 150 °C and 200 °C as a function of temperature showed similar semiconductor-to-metal transition (SMT) characters with the transition temperature for heating branch (T{sub c,h}) of about 72 °C, a hysteresis width of about 10 °C and the resistance change of two orders of magnitude. The increase of T{sub c,h} compared with the bulk VO{sub 2} (68 °C) may be attributed to the tensile stress along the c-axis in the film. Transmittance measurement of VO{sub 2}/SiO{sub 2} films showed typical thermochromic property with a NIR switching efficiency of above 50% at 2 μm across

  16. Critical currents in columnar vanadium films

    International Nuclear Information System (INIS)

    Cherkasova, V.G.; Kolin'ko, A.E.; Slatin, A.E.; Fogel, N.Y.

    1982-01-01

    The angular dependence of the critical current I/sub c/ is studied in columnar vanadium films. In measurements in constant magnetic fields an anomalous maximum I/sub c/ is found on the I/sub c/(theta) curves at arbitrary values of the external magnetic field and temperature, when the magnetic field is perpendicular to the plane of the specimen. The angular dependence of I/sub c/ measured in constant reduced magnetic fields h = H/H/sub c/2(T,theta) shows no singularities in the vicinity of the angle at which the I/sub c/ peak is found in the case H = const, i.e., the critical current is isotropic. This implies that a change in the relative orientation of the vortices and column boundaries produces no change in critical current. The experimental data obtained permit the conclusion that the anisotropy of I/sub c/ observed in a constant magnetic field H is merely a consequence of the anisotropy of the critical magnetic field H/sub c/: the critical current ''tracking'' the magnitude and angular dependence of H/sub c/

  17. Reaction between vanadium trichloride oxide and hydrogen sulfide

    International Nuclear Information System (INIS)

    Yajima, Akimasa; Matsuzaki, Ryoko; Saeki, Yuzo

    1978-01-01

    The details of the reaction between vanadium trichloride oxide and hydrogen sulfide were examined at 20 and 60 0 C. The main products by the reaction were vanadium dichloride oxide, sulfur, and hydrogen chloride. In addition to these products, small amounts of vanadium trichloride, vanadium tetrachloride, disulfur dichloride, and sulfur dioxide were formed. The formations of the above-mentioned reaction products can be explained as follows: The first stage is the reaction between vanadium trichloride oxide and hydrogen sulfide, 2VOCl 3 (l) + H 2 S(g)→2VOCl 2 (s) + S(s) + 2HCl(g). Then the resulting sulfur reacts with the unreacted vanadium trichloride oxide, 2VOCl 3 (l) + 2S(s)→2VOCl 2 (s) + S 2 Cl 2 (l). The resulting disulfur dichloride subsequently reacts with the unreacted vanadium trichloride oxide, 2VOCl 3 (l) + S 2 Cl 2 (l)→2VCl 4 (l) + S(s) + SO 2 (g). The resulting vanadium tetrachloride reacts with the sulfur formed during the reaction, 2VCl 4 (l) + 2S(s)→2VCl 3 (s) + S 2 Cl 2 (l), and also reacts with hydrogen sulfide, 2VCl 4 (l) + H 2 S(g)→2VCl 3 (s) + S(s) + 2HCl(g). (auth.)

  18. Lithium diffusion in silver vanadium oxide

    International Nuclear Information System (INIS)

    Takeuchi, E.S.; Thiebolt, W.C. III

    1989-01-01

    Lithium/silver vanadium oxide (SVO) batteries have been developed to power implantable devices. The voltage of Li/SVO cells decreases with discharge allowing state of charge assessment by accurate determination of the cells' open circuit voltage. The open circuit voltage recovery of Li/SVO cells was monitored during intermittent high rate discharge. It was found that the voltage does not recover at the same rate or magnitude at all depths of discharge. The authors describe lithium diffusion in SVO studied by low scan rate voltammetry where utilization of SVO at various scan rates was used to determine the diffusion rate of lithium. A pulse technique was also used where the rate of lithium diffusion was measured at various depths of discharge

  19. Electrochemical studies on vanadium oxides, 9

    International Nuclear Information System (INIS)

    Miura, Takashi; Yamamoto, Masahiro; Takahashi, Hirobumi; Kishi, Tomiya; Nagai, Takashi

    1979-01-01

    The mechanism of the anodic oxidation of various organic compounds-including methanol, formaldehyde, formic acid, ethanol, acetaldehyde and acetic acid-at illuminated vanadium pentoxide (V 2 O 5 ) single crystal electrodes were investigated in aqueous solutions of an H 2 SO 4 -K 2 SO 4 system of about pH 2, in which oxygen evolution from water molecules had previously been confirmed to occur with a current efficiency of about 100%. It was shown that all the organics were oxidized by the so called hole-current doubling mechanism, and that the oxygen evolution reaction, which competed with the above oxidation reaction at the hole-capturing step from the valence band of the electrode, proceeded by the simple hole-capturing mechanism, not followed by an electron injection step into the conduction band. Furthermore, it is considered that chloride ions added to the electrolytes tended to hinder hole-current doubling oxidation owing to their reactivity with the holes at the illuminated V 2 O 5 electrodes. (author)

  20. Characterization of Ag-doped vanadium oxide (AgxV2O5) thin film for cathode of thin film battery

    International Nuclear Information System (INIS)

    Hwang, H.S.; Oh, S.H.; Kim, H.S.; Cho, W.I.; Cho, B.W.; Lee, D.Y.

    2004-01-01

    The effect of silver co-sputtering on the characteristics of amorphous V 2 O 5 films, grown by dc reactive sputtering, is investigated. The co-sputtering process influences the growth mechanism as well as the characteristics of the V 2 O 5 films. X-ray diffraction (XRD), Inductively coupled plasma-atomic emission spectrometry (ICP-AES), field emission-scanning electron microscopy (FE-SEM), Fourier transform infrared spectrometry (FT-IR) and X-ray photoelectron spectrometry (XPS) results indicate that the microstructure of the V 2 O 5 films is affected by the rf power of the co-sputtered silver. In addition, an all-solid-state thin film battery with full cell structure of Li/LiPON/Ag x V 2 O 5 /Pt has been fabricated. It is found that the silver co-sputtered V 2 O 5 cathode film exhibits better cycle performance than an undoped one

  1. Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition

    Energy Technology Data Exchange (ETDEWEB)

    Menges, F.; Spieser, M.; Riel, H.; Gotsmann, B., E-mail: bgo@zurich.ibm.com [IBM Research-Zurich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Dittberner, M. [IBM Research-Zurich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Photonics Laboratory, ETH Zurich, 8093 Zurich (Switzerland); Novotny, L. [Photonics Laboratory, ETH Zurich, 8093 Zurich (Switzerland); Passarello, D.; Parkin, S. S. P. [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States)

    2016-04-25

    The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, and the sphere temperatures were varied in a range between 100 and 200 °C. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.

  2. Efficiency improvement of multicrystalline silicon solar cells after surface and grain boundaries passivation using vanadium oxide

    Energy Technology Data Exchange (ETDEWEB)

    Derbali, L., E-mail: rayan.slat@yahoo.fr [Photovoltaiec Laboratory, Research and Technology Center of Energy, Technopole de Borj-Cedria, BP 95, Hammam-Lif 2050 (Tunisia); Ezzaouia, H. [Photovoltaiec Laboratory, Research and Technology Center of Energy, Technopole de Borj-Cedria, BP 95, Hammam-Lif 2050 (Tunisia)

    2012-08-01

    Highlights: Black-Right-Pointing-Pointer Evaporation of vanadium pentoxide onto the front surface leads to reduce the surface reflectivity considerably. Black-Right-Pointing-Pointer An efficient surface passivation can be obtained after thermal treatment of obtained films. Black-Right-Pointing-Pointer Efficiency of the obtained solar cells has been improved noticeably after thermal treatment of deposited thin films. - Abstract: The aim of this work is to investigate the effect of vanadium oxide deposition onto the front surface of multicrystalline silicon (mc-Si) substrat, without any additional cost in the fabrication process and leading to an efficient surface and grain boundaries (GBs) passivation that have not been reported before. The lowest reflectance of mc-Si coated with vanadium oxide film of 9% was achieved by annealing the deposited film at 600 Degree-Sign C. Vanadium pentoxide (V{sub 2}O{sub 5}) were thermally evaporated onto the surface of mc-Si substrates, followed by a short annealing duration at a temperature ranging between 600 Degree-Sign C and 800 Degree-Sign C, under O{sub 2} atmosphere. The chemical composition of the films was analyzed by means of Fourier transform infrared spectroscopy (FTIR). Surface and cross-section morphology were determined by atomic force microscope (AFM) and a scanning electron microscope (SEM), respectively. The deposited vanadium oxide thin films make the possibility of combining in one processing step an antireflection coating deposition along with efficient surface state passivation, as compared to a reference wafer. Silicon solar cells based on untreated and treated mc-Si wafers were achieved. We showed that mc-silicon solar cells, subjected to the above treatment, have better short circuit currents and open-circuit voltages than those made from untreated wafers. Thus, the efficiency of obtained solar cells has been improved.

  3. Efficiency improvement of multicrystalline silicon solar cells after surface and grain boundaries passivation using vanadium oxide

    International Nuclear Information System (INIS)

    Derbali, L.; Ezzaouia, H.

    2012-01-01

    Highlights: ► Evaporation of vanadium pentoxide onto the front surface leads to reduce the surface reflectivity considerably. ► An efficient surface passivation can be obtained after thermal treatment of obtained films. ► Efficiency of the obtained solar cells has been improved noticeably after thermal treatment of deposited thin films. - Abstract: The aim of this work is to investigate the effect of vanadium oxide deposition onto the front surface of multicrystalline silicon (mc-Si) substrat, without any additional cost in the fabrication process and leading to an efficient surface and grain boundaries (GBs) passivation that have not been reported before. The lowest reflectance of mc-Si coated with vanadium oxide film of 9% was achieved by annealing the deposited film at 600 °C. Vanadium pentoxide (V 2 O 5 ) were thermally evaporated onto the surface of mc-Si substrates, followed by a short annealing duration at a temperature ranging between 600 °C and 800 °C, under O 2 atmosphere. The chemical composition of the films was analyzed by means of Fourier transform infrared spectroscopy (FTIR). Surface and cross-section morphology were determined by atomic force microscope (AFM) and a scanning electron microscope (SEM), respectively. The deposited vanadium oxide thin films make the possibility of combining in one processing step an antireflection coating deposition along with efficient surface state passivation, as compared to a reference wafer. Silicon solar cells based on untreated and treated mc-Si wafers were achieved. We showed that mc-silicon solar cells, subjected to the above treatment, have better short circuit currents and open-circuit voltages than those made from untreated wafers. Thus, the efficiency of obtained solar cells has been improved.

  4. Influence of titanium and vanadium on the hydrogen transport through amorphous alumina films

    Energy Technology Data Exchange (ETDEWEB)

    Palsson, G.K. [Department of Physics, Uppsala University, Box 530, S-751 21 Uppsala (Sweden); Wang, Y.T. [Department of Physics, Uppsala University, Box 530, S-751 21 Uppsala (Sweden); Azofeifa, D. [Centro de Investigacion en Ciencia e Ingenieria de Materiales and Escuela de Fisica, Universidad de Costa Rica, San Jose (Costa Rica); Raanaei, H. [Department of Physics, Uppsala University, Box 530, S-751 21 Uppsala (Sweden); Department of Physics, Persian Gulf University, Bushehr 75168 (Iran, Islamic Republic of); Sahlberg, M. [Department of Materials Chemistry, Uppsala University, Box 538, S-751 21 Uppsala (Sweden); Hjoervarsson, B. [Department of Physics, Uppsala University, Box 530, S-751 21 Uppsala (Sweden)

    2010-04-02

    The influence of titanium and vanadium on the hydrogen transport rate through thin amorphous alumina films is addressed. Only small changes in the transport rate are observed when the Al{sub 2}O{sub 3} are covered with titanium or vanadium. This is in stark contrast to results with a Pd overlayer, which enhances the transport by an order of magnitude. Similarly, when titanium is embedded into the alumina the transport rate is faster than for the covered case but still slower than the undoped reference. Embedding vanadium in the alumina does not yield an increase in uptake rate compared to the vanadium covered oxide layers. These results add to the understanding of the hydrogen uptake of oxidized metals, especially the alanates, where the addition of titanium has been found to significantly enhance the rate of hydrogen uptake. The current findings eliminate two possible routes for the catalysis of alanates by Ti, namely dissociation and effective diffusion short-cuts formed by Ti. Finally, no photocatalytic enhancement was noticed on the titanium covered samples.

  5. Ab initio Investigation of Helium in Vanadium Oxide Nanoclusters

    Science.gov (United States)

    Danielson, Thomas; Tea, Eric; Hin, Celine

    Nanostructured ferritic alloys (NFAs) are strong candidate materials for the next generation of fission reactors and future fusion reactors. They are characterized by a large number density of oxide nanoclusters dispersed throughout a BCC iron matrix, where current oxide nanoclusters are primarily comprised of Y-Ti-O compounds. The oxide nanoclusters provide the alloy with high resistance to neutron irradiation, high yield strength and high creep strength at the elevated temperatures of a reactor environment. In addition, the oxide nanoclusters serve as trapping sites for transmutation product helium providing substantially increased resistance to catastrophic cracking and embrittlement. Although the mechanical properties and radiation resistance of the existing NFAs is promising, the problem of forming large scale reactor components continues to present a formidable challenge due to the high hardness and unpredictable fracture behavior of the alloys. An alternative alloy has been previously proposed and fabricated where vanadium is added in order to form vanadium oxide nanoclusters that serve as deflection sites for crack propagation. Although experiments have shown evidence that the fracture behavior of the alloys is improved, it is unknown whether or not the vanadium oxide nanoclusters are effective trapping sites for helium. We present results obtained using density functional theory investigating the thermodynamic stability of helium with the vanadium oxide matrix to make a comparison of trapping effectiveness to traditional Y-Ti-O compounds.

  6. Hysteresis phenomena at metal-semiconductor phase transformation in vanadium oxides

    International Nuclear Information System (INIS)

    Lanskaya, T.G.; Merkulov, I.A.; Chudnovski , F.A.

    1978-01-01

    The hysteresis phenomena during the metal-semiconductor phase transformation (MSPT) in vanadium oxides are investigated. It is shown experimentally that the hysteresis effects during MSPT in vanadium oxides are associated not only with the martensite nature of the transformation, but also with activation processes. It is shown that the hysteresis phenomena during MSPT may be described by the distribution function of microregions of the crystal in the phase transformation temperature T 0 and the coercive temperature Tsub(c). An experimental method for constructing this distribution function was worked out. An analysis of the experimental data shows that finely dispersed films are characterized by a wide range of values of T 0 and Tsub(c) (55 deg C 0 <65 deg C, 6 deg C< Tsub(c)<12 deg C). The peculiarities of the optical recording of information on monocrystal and finely dispersed films are considered

  7. Vanadium

    International Nuclear Information System (INIS)

    Duke, V.W.A.

    1983-07-01

    Although a relatively abundant element, vanadium occurs only rarely in sufficient concentration to be worked commercially. In most cases, vanadium is produced as a co-product of some other element, most commonly iron. The principal ore deposits of vanadium occur in titaniferous magnetites that have been formed by magnetic segregation. Important commercial deposits of vanadium also occur associated with uranium, and with phosphate deposits. The principal uses of vanadium are in the production of special purpose, particularly high-strength low-alloy steels, in the manufacture of titanium alloys, and as a catalyst, notably in the manufacture of sulphuric acid. Small quantities of vanadium, often in combination with niobium, are added to steel to bring about toughening through grain refinement, and increased tensile strength through precipitation hardening. Known world reserves of vanadium are very large and fully adequate to meet any foreseeable demand. By far the largest known deposits of vanadium occur in South Africa. Many other similar deposits are known, but are only exploited in the USSR and China. The present total world demand for vanadium amounts to about 40 000 tons of metal annually and this is produced primarily in four countries, South Africa, the USSR, the People's Republic of China and the United States of America, in that order. South Africa is the principal vanadium producing country in the world, supplying vanadium in various forms. Vanadium has a very low and non-accumulative toxicity; recovery plants can be operated in such a manner to ensure no air or steam pollution results

  8. Vanadium Doped Tungsten Oxide Material - Electrical Physical and Sensing Properties

    Directory of Open Access Journals (Sweden)

    Shishkin N. Y.

    2008-05-01

    Full Text Available The electrical physical and sensing (to VOCs and inorganic gases properties of vanadium doped tungsten oxide in the regions of phase transition temperature were investigated. Vanadium oxide (II dimerization was observed in the doped material, corresponding to new phase transition. The extreme sensitivity and selectivity to chemically active gases and vapors in small concentrations: CO, NOx, NH3 acetone, ethanol near phase transitions temperature was found. Sensor elements were manufactured for the quantitative detection (close to 1 ppm of alcohol and ammonia.

  9. Formation of VO{sub 2} by rapid thermal annealing and cooling of sputtered vanadium thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ba, Cheikhou O. F., E-mail: cheikhou.ba.1@ulaval.ca; Fortin, Vincent; Bah, Souleymane T.; Vallée, Réal [Centre d' optique, photonique et laser (COPL), Université Laval, Québec G1V 0A6 (Canada); Pandurang, Ashrit [Thin Films and Photonics Research Group (GCMP), Department of Physics and Astronomy, Université de Moncton, Moncton, New Brunswick E1A 3E9 (Canada)

    2016-05-15

    Sputtered vanadium-rich films were subjected to rapid thermal annealing-cooling (RTAC) in air to produce vanadium dioxide (VO{sub 2}) thin films with thermochromic switching behavior. High heating and cooling rates in the thermal oxidation process provided an increased ability to control the film's microstructure. X-ray diffraction patterns of the films revealed less intense VO{sub 2} peaks compared to traditional polycrystalline samples fabricated with a standard (slower) cooling time. Such films also exhibit a high optical switching reflectance contrast, unlike the traditional polycrystalline VO{sub 2} thin films, which show a more pronounced transmittance switching. The authors find that the RTAC process stabilizes the VO{sub 2} (M2) metastable phase, enabling a rutile-semiconductor phase transition (R-M2), followed by a semiconductor–semiconductor phase transition (M2-M1).

  10. Ion sensing properties of vanadium/tungsten mixed oxides

    International Nuclear Information System (INIS)

    Guidelli, Eder Jose; Guerra, Elidia Maria; Mulato, Marcelo

    2011-01-01

    Vanadium/tungsten mixed oxide (V 2 O 5 /WO 3 ) sensing membranes were deposited on glassy carbon substrates and used as the H + sensor of the extended gate field effect transistor (EGFET) device. X-ray diffractograms indicated a decrease of the interplanar spacing of V 2 O 5 after the insertion of WO 3 revealing that the lamellar structure is under compressive stress. The crystallinity increases with increasing WO 3 molar ratio. The film is not homogeneous, with more WO 3 material sitting at the surface. This influences the response of pH sensors using the EGFET configuration. The maximum sensitivity of 68 mV pH -1 was obtained for the sample with 5% WO 3 molar ratio. For higher WO 3 molar ratios, the behavior is not linear. It can be concluded that V 2 O 5 dominates for acidic solutions while WO 3 dominates for basic solutions. Therefore, the mixed oxide with low amount of WO 3 is the main candidate for further use as biosensor.

  11. Effects of gamma irradiations on reactive pulsed laser deposited vanadium dioxide thin films

    Science.gov (United States)

    Madiba, I. G.; Émond, N.; Chaker, M.; Thema, F. T.; Tadadjeu, S. I.; Muller, U.; Zolliker, P.; Braun, A.; Kotsedi, L.; Maaza, M.

    2017-07-01

    Vanadium oxide films are considered suitable coatings for various applications such as thermal protective coating of small spacecrafts because of their thermochromic properties. While in outer space, such coating will be exposed to cosmic radiations which include γ-rays. To study the effect of these γ-rays on the coating properties, we have deposited vanadium dioxide (VO2) films on silicon substrates and subjected them to extensive γ-irradiations with typical doses encountered in space missions. The prevalent crystallographic phase after irradiation remains the monoclinic VO2 phase but the films preferential orientation shifts to lower angles due to the presence of disordered regions caused by radiations. Raman spectroscopy measurements also evidences that the VO2 structure is slightly affected by gamma irradiation. Indeed, increasing the gamma rays dose locally alters the crystalline and electronic structures of the films by modifying the V-V inter-dimer distance, which in turns favours the presence of the VO2 metallic phase. From the XPS measurements of V2p and O1s core level spectra, an oxidation of vanadium from V4+ towards V5+ is revealed. The data also reveal a hydroxylation upon irradiation which is corroborated by the vanishing of a low oxidation state peak near the Fermi energy in the valence band. Our observations suggest that gamma radiations induce the formation of Frenkel pairs. Moreover, THz transmission measurements show that the long range structure of VO2 remains intact after irradiation whilst the electrical measurements evidence that the coating resistivity decreases with gamma irradiation and that their transition temperature is slightly reduced for high gamma ray doses. Even though gamma rays are only one of the sources of radiations that are encountered in space environment, these results are very promising with regards to the potential of integration of such VO2 films as a protective coating for spacecrafts.

  12. Effects of a vanadium post-metallocene catalyst-induced polymer backbone inhomogeneity on UV oxidative degradation of the resulting polyethylene film

    KAUST Repository

    Atiqullah, M.

    2012-07-01

    A Group 5 post-metallocene precatalyst, (ONO)VCl(THF) 2 (ONO = a bis(phenolate)pyridine LX 2 pincer ligand), activated with modified methylaluminoxane (MMAO-3A) produced a linear ethylene homopolymer (nm-HomoPE)and an unusual inhomogeneous copolymer (nm-CopolyPE) with 1-hexene having very low backbone unsaturation. The nm-CopolyPE inhomogeneity was reflected in the distributions of short chain branches, 1-hexene composition, and methylene sequence length. The 1-hexene incorporation into the polyethylene backbone strongly depended on the molecular weight of the growing polymer chain. (ONO)VCl(THF) 2, because of site diversity and easier removal of a tertiary (vs. a secondary) hydrogen, produced a skewed short chain branching (SCB) profile, incorporating 1-hexene more efficiently in the low molecular weight region than in the high molecular weight region. The significant decrease in molecular weight by 1-hexene showed that the (ONO)VCl(THF) 2 catalytic sites were also highly responsive to chain-transfer directly to 1-hexene itself, producing vinyl and trans-vinylene termini. Subsequently, the effect of backbone inhomogeneity on the UV oxidative degradation of films made from both polyethylenes was investigated. The major functional group accumulated in the branched nm-CopolyPE film was carbonyl followed by carboxyl, then vinyl/ester, whereas that in the linear nm-HomoPE film was carboxyl. However, (carbonyl, carboxyl, vinyl, and ester) nm-CopolyPE film >> (carboxyl) nm-HomoPE film). The distributions of the tertiary C-H sites and methylene sequence length in the branched nm-CopolyPE film enhanced abstraction of H, decomposition of hydroperoxide group ROOH, and generation of carbonyl compounds as compared with those in the linear nm-HomoPE film. This clearly establishes the role played by the backbone inhomogeneity. The effect of short chain branches and sequence length distributions on peak melting temperature T pm, and most probably lamellar thickness L o, was

  13. Novel hybrid materials based on the vanadium oxide nanobelts

    Energy Technology Data Exchange (ETDEWEB)

    Zabrodina, G.S., E-mail: kudgs@mail.ru [G.A. Razuvaev Institute of Organometallic Chemistry of Russian Academy of Sciences, Nizhny Novgorod 603950 (Russian Federation); Lobachevsky State University, Nizhny Novgorod 603950 (Russian Federation); Makarov, S.G.; Kremlev, K.V. [G.A. Razuvaev Institute of Organometallic Chemistry of Russian Academy of Sciences, Nizhny Novgorod 603950 (Russian Federation); Lobachevsky State University, Nizhny Novgorod 603950 (Russian Federation); Yunin, P.A.; Gusev, S.A. [Institute for Physics of Microstructures Russian Academy of Sciences, Nizhny Novgorod 603087 (Russian Federation); Kaverin, B.S.; Kaverina, L.B. [G.A. Razuvaev Institute of Organometallic Chemistry of Russian Academy of Sciences, Nizhny Novgorod 603950 (Russian Federation); Ketkov, S.Yu. [G.A. Razuvaev Institute of Organometallic Chemistry of Russian Academy of Sciences, Nizhny Novgorod 603950 (Russian Federation); Lobachevsky State University, Nizhny Novgorod 603950 (Russian Federation)

    2016-04-15

    Graphical abstract: - Highlights: • Flat and curved vanadium oxide nanobelts have been synthesized. • Hybrid material was prepared via decoration of flexible nanobelts with zinc phthalocyanine. • Investigations of the thermal stability, morphologies and structures were carried out. - Abstract: Novel hybrid materials based on zinc phthalocyanine and nanostructured vanadium oxides have attracted extensive attention for the development of academic research and innovative industrial applications such as flexible electronics, optical sensors and heterogeneous catalysts. Vanadium oxides nanobelts were synthesized via a hydrothermal treatment V{sub 2}O{sub 5}·nH{sub 2}O gel with surfactants (TBAB, CTAB) used as structure-directing agents, where CTAB – cetyltrimethylammonium bromide, TBAB – tetrabutylammonium bromide. Hybrid materials were prepared decoration of (CTA){sub 0.33}V{sub 2}O{sub 5} flexible nanobelts with cationic zinc phthalocyanine by the ion-exchange route. Investigations of the thermal stability, morphologies and structures of the (CTA){sub 0.33}V{sub 2}O{sub 5}, (TBA){sub 0.16}V{sub 2}O{sub 5} nanobelts and zinc phthalocyanine exchange product were carried out. The hybrid materials based on the nanostructured vanadium oxide and zinc phthalocyanine were tested as photocatalysts for oxidation of citronellol and 2-mercaptoethanol by dioxygen.

  14. Electron-beam deposition of vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Marvel, R.E.; Appavoo, K. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Choi, B.K. [Vanderbilt University, Department of Electrical Engineering and Computer Science, Nashville, TN (United States); Nag, J. [Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States); Haglund, R.F. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Vanderbilt University, Institute for Nanoscale Science and Engineering, Nashville, TN (United States); Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States)

    2013-06-15

    Developing a reliable and efficient fabrication method for phase-transition thin-film technology is critical for electronic and photonic applications. We demonstrate a novel method for fabricating polycrystalline, switchable vanadium dioxide thin films on glass and silicon substrates and show that the optical switching contrast is not strongly affected by post-processing annealing times. The method relies on electron-beam evaporation of a nominally stoichiometric powder, followed by fast annealing. As a result of the short annealing procedure we demonstrate that films deposited on silicon substrates appear to be smoother, in comparison to pulsed laser deposition and sputtering. However, optical performance of e-beam evaporated film on silicon is affected by annealing time, in contrast to glass. (orig.)

  15. Mechanical and electrochemical characterization of vanadium nitride (VN) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Caicedo, J.C., E-mail: Jcesarca@calima.univalle.edu.co [Grupo de Peliculas Delgadas, Departamento de Fisica, Universidad del Valle, Cali (Colombia); Zambrano, G. [Grupo de Peliculas Delgadas, Departamento de Fisica, Universidad del Valle, Cali (Colombia); Aperador, W. [Ingenieria Mecatronica, Universidad Militar Nueva Granada, Bogota (Colombia); Escobar-Alarcon, L.; Camps, E. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico, DF 11801 (Mexico)

    2011-10-15

    Vanadium nitride (V-N) thin films were grown using a reactive d.c. magnetron sputtering process, from a vanadium target (99.999%) in an Ar/N{sub 2} gas mixture at different deposition bias voltage. Films were deposited onto silicon (1 0 0) and RUS-3 steel substrates at 400 deg. C. Structural, compositional, mechanical and electrochemical characterizations were performed by X-ray diffraction (XRD), elastic forward analysis (EFA), nanoindentation, electrochemical impedance spectroscopy (EIS), and Tafel polarization curves, respectively. X-ray diffraction patterns show the presence of (1 1 1) and (2 0 0) crystallographic orientations associated to the V-N cubic phase. Nanoindentation measurements revealed that when the bias voltage increases from 0 V to -150 V the hardness and elastic modulus are increased from 11 GPa to 20 GPa and from 187 GPa to 221 GPa, respectively. EIS and Tafel curves showed that the corrosion rate of steel, coated with V-N single layer films deposited without bias voltage, diminishes 90% compared to the steel without this coating. On the other hand, when the V-N coating was deposited at the highest d.c. bias voltage (-150 V), the corrosion rate was greater than in the steel coated with zero-voltage (0 V) V-N films. This last result could be attributed to the formation of porosities produced by the ion bombardment during the deposition process.

  16. Mechanical and electrochemical characterization of vanadium nitride (VN) thin films

    International Nuclear Information System (INIS)

    Caicedo, J.C.; Zambrano, G.; Aperador, W.; Escobar-Alarcon, L.; Camps, E.

    2011-01-01

    Vanadium nitride (V-N) thin films were grown using a reactive d.c. magnetron sputtering process, from a vanadium target (99.999%) in an Ar/N 2 gas mixture at different deposition bias voltage. Films were deposited onto silicon (1 0 0) and RUS-3 steel substrates at 400 deg. C. Structural, compositional, mechanical and electrochemical characterizations were performed by X-ray diffraction (XRD), elastic forward analysis (EFA), nanoindentation, electrochemical impedance spectroscopy (EIS), and Tafel polarization curves, respectively. X-ray diffraction patterns show the presence of (1 1 1) and (2 0 0) crystallographic orientations associated to the V-N cubic phase. Nanoindentation measurements revealed that when the bias voltage increases from 0 V to -150 V the hardness and elastic modulus are increased from 11 GPa to 20 GPa and from 187 GPa to 221 GPa, respectively. EIS and Tafel curves showed that the corrosion rate of steel, coated with V-N single layer films deposited without bias voltage, diminishes 90% compared to the steel without this coating. On the other hand, when the V-N coating was deposited at the highest d.c. bias voltage (-150 V), the corrosion rate was greater than in the steel coated with zero-voltage (0 V) V-N films. This last result could be attributed to the formation of porosities produced by the ion bombardment during the deposition process.

  17. Chemistry, spectroscopy and the role of supported vanadium oxides in heterogeneous catalysis

    NARCIS (Netherlands)

    Weckhuysen, B.M.; Keller, D.E.

    2003-01-01

    Supported vanadium oxide catalysts are active in a wide range of applications. In this review, an overview is given of the current knowledge available about vanadium oxide-based catalysts. The review starts with the importance of vanadium in heterogeneous catalysis, a discussion of the molecular

  18. Improving methane gas sensing properties of multi-walled carbonnanotubes by vanadium oxide filling

    CSIR Research Space (South Africa)

    Chimowa, George

    2017-08-01

    Full Text Available Manipulation of electrical properties and hence gas sensing properties of multi-walled carbon nanotubes (MWNTs) by filling the inner wall with vanadium oxide is presented. Using a simple capillary technique, MWNTs are filled with vanadium metal...

  19. Effect of drying method on properties of vanadium-molybdenum oxide catalysts

    International Nuclear Information System (INIS)

    Gorshkova, T.P.; Savchenko, L.A.; Tarasova, D.V.; Tret'yakov, Yu.D.; Olen'kova, I.P.; Nikoro, T.A.; Maksimov, N.G.

    1981-01-01

    Effect of drying method of molybdenum and vanadium salt solutions on physicochemical and catalytical properties of vanadium-molybdenum catalysts is studied. It is shown that the drying method of solutions determines the completeness of vanadium binding into oxide vanadium-molybdenum compounds and thus effects the activity and selectivity of catalysts in acrolein oxidation into acrylic acid. Besides the drying method determines the porous structure of catalysts [ru

  20. Periodic arrays of pinning centers in thin vanadium films.

    Energy Technology Data Exchange (ETDEWEB)

    Brueck, S. R. J.; Chung, K.; Crabtree, G.; DeLong, L. E.; Hesketh, P. J.; Ilic, B.; Metlushko, V.; Watkins, B.; Welp, U.; Zhang, Z.

    1997-07-13

    Commensurability effects between the superconducting flux line lattice and a square lattice (period d=1{micro}m and diameter D=0.4{micro}m) of submicron holes in 1500 {angstrom} vanadium films were studied by atomic force microscopy, DC magnetization, AC susceptibility, magnetoresistivity and I-V measurements. Peaks in the magnetization and critical current at matching fields are found to depend nonlinearly upon the value of external AC field or current, as well as the inferred symmetry of the flux line lattice.

  1. Effects of gamma irradiations on reactive pulsed laser deposited vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Madiba, I.G., E-mail: madibagiven@gmail.com [UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, P O Box 392, Pretoria (South Africa); Empa, Swiss Federal Laboratories Materials Science and Technology, CH-8600 Dübendorf (Switzerland); Émond, N.; Chaker, M. [Institut National de la Recherche Scientifique (INRS),1650 Blvd. Lionel-Boulet, Varennes, Québec J3X1S2 (Canada); Thema, F.T. [UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, P O Box 392, Pretoria (South Africa); iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, PO Box 722, Somerset West, Western Cape Province (South Africa); Tadadjeu, S.I. [iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, PO Box 722, Somerset West, Western Cape Province (South Africa); Department of Electrical, Electronics and Computer Engineering, French South African Institute of Technology/Cape Peninsula University of Technology, Bellville campus, PO Box 1906, Bellville, 7530 (South Africa); Muller, U.; Zolliker, P. [Empa, Swiss Federal Laboratories Materials Science and Technology, CH-8600 Dübendorf (Switzerland); Braun, A. [ETH Zurich, Swiss Federal Institute of Technology, CH-8057, Zurich (Switzerland); Empa, Swiss Federal Laboratories Materials Science and Technology, CH-8600 Dübendorf (Switzerland); Kotsedi, L. [iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, PO Box 722, Somerset West, Western Cape Province (South Africa); and others

    2017-07-31

    Highlights: • Synthesis of VO{sub 2} thin films by Reactive pulsed laser deposition has been achieved. • Properties VO{sub 2} remain mainly unaffected when subjected to gamma ray doses similar to those encountered during space missions. • The long range crystal structure of VO{sub 2} remains intact upon irradiation on different doses up to 100 kGy. • XPS reveals a shift from V{sup 4+} to V{sup 5+} oxidation state upon irradiation, due to the frenkel pair formation on the surface. • Irradiated films show the characteristic SMT of VO{sub 2}, although the electrical and optical properties are slightly affected. - Abstract: Vanadium oxide films are considered suitable coatings for various applications such as thermal protective coating of small spacecrafts because of their thermochromic properties. While in outer space, such coating will be exposed to cosmic radiations which include γ-rays. To study the effect of these γ-rays on the coating properties, we have deposited vanadium dioxide (VO{sub 2}) films on silicon substrates and subjected them to extensive γ-irradiations with typical doses encountered in space missions. The prevalent crystallographic phase after irradiation remains the monoclinic VO{sub 2} phase but the films preferential orientation shifts to lower angles due to the presence of disordered regions caused by radiations. Raman spectroscopy measurements also evidences that the VO{sub 2} structure is slightly affected by gamma irradiation. Indeed, increasing the gamma rays dose locally alters the crystalline and electronic structures of the films by modifying the V–V inter-dimer distance, which in turns favours the presence of the VO{sub 2} metallic phase. From the XPS measurements of V2p and O1s core level spectra, an oxidation of vanadium from V{sup 4+} towards V{sup 5+} is revealed. The data also reveal a hydroxylation upon irradiation which is corroborated by the vanishing of a low oxidation state peak near the Fermi energy in the

  2. Highly repeatable nanoscale phase coexistence in vanadium dioxide films

    Science.gov (United States)

    Huffman, T. J.; Lahneman, D. J.; Wang, S. L.; Slusar, T.; Kim, Bong-Jun; Kim, Hyun-Tak; Qazilbash, M. M.

    2018-02-01

    It is generally believed that in first-order phase transitions in materials with imperfections, the formation of phase domains must be affected to some extent by stochastic (probabilistic) processes. The stochasticity would lead to unreliable performance in nanoscale devices that have the potential to exploit the transformation of physical properties in a phase transition. Here we show that stochasticity at nanometer length scales is completely suppressed in the thermally driven metal-insulator transition (MIT) in sputtered vanadium dioxide (V O2 ) films. The nucleation and growth of domain patterns of metallic and insulating phases occur in a strikingly reproducible way. The completely deterministic nature of domain formation and growth in films with imperfections is a fundamental and unexpected finding about the kinetics of this material. Moreover, it opens the door for realizing reliable nanoscale devices based on the MIT in V O2 and similar phase-change materials.

  3. Transparent optically vanadium dioxide thermochromic smart film fabricated via electrospinning technique

    Science.gov (United States)

    Lu, Yuan; Xiao, Xiudi; Cao, Ziyi; Zhan, Yongjun; Cheng, Haoliang; Xu, Gang

    2017-12-01

    The monoclinic phase vanadium dioxide VO2 (M) based transparent thermochromic smart films were firstly fabricated through heat treatment of opaque VO2-based composite nanofibrous mats, which were deposited on the glass substrate via electrospinning technique. Noteworthily, the anti-oxidation property of VO2 smart film was improved due to inner distribution of VO2 in the polymethylmethacrylate (PMMA) nanofibers, and the composite mats having water contact angle of 165° determined itself good superhydrophobic property. Besides, PMMA nanofibrous mats with different polymer concentrations demonstrated changeable morphology and fiber diameter. The VO2 nanoparticles having diameter of 30-50 nm gathered and exhibited ellipse-like or belt-like structure. Additionally, the solar modulation ability of PMMA-VO2 composite smart film was 6.88% according to UV-Vis-NIR spectra. The research offered a new notion for fabricating transparent VO2 thermochromic material.

  4. Additive for vanadium and sulfur oxide capture in catalytic cracking

    International Nuclear Information System (INIS)

    Chin, A.A.; Sapre, A.V.; Sarli, M.S.

    1991-01-01

    This patent describes a fluid catalytic cracking process in which a hydrocarbon feedstock. It comprises: a vanadium contaminant in an amount of a least 2 ppmw is cracked under fluid catalytic cracking conditions with a solid, particulate cracking catalyst to produce cracking products of lower molecular weight while depositing carbonaceous material on the particles of cracking catalyst, separating the particles of cracking catalyst from the cracking products in the disengaging zone and oxidatively regenerating the cracking catalyst by burning off the deposited carbonaceous material in a regeneration zone, the improvement comprising reducing the make-up rate of the cracking catalyst by contacting the cracking feed with a particulate additive composition for passivating the vanadium content of the feed, comprising an alkaline earth metal oxide and an alkaline earth metal spinel

  5. Synthesis of electrochromic vanadium oxide by pulsed spray pyrolysis technique and its properties

    International Nuclear Information System (INIS)

    Patil, C E; Tarwal, N L; Shinde, P S; Patil, P S; Deshmukh, H P

    2009-01-01

    A new improved pulsed spray pyrolysis technique (PSPT) was employed to deposit a vanadium oxide (V 2 O 5 ) thin film from a methanolic vanadium chloride precursor onto glass and conducting F : SnO 2 coated glass substrates. The structural, morphological, electrical, optical and spectroscopic properties of the film deposited at 573 K were studied. Infrared spectroscopy and x-ray diffraction confirmed the presence of the V 2 O 5 phase. The V 2 O 5 film (thickness ∼118 nm) is polycrystalline with a tetragonal crystal structure. Scanning electron microscopy reveals compact granular morphology consisting of ∼80-100 nm size grains. The film is transparent in the visible region (average %T ∼70%) with an optical band gap energy of 2.47 eV involving both direct and indirect optical transitions. The room temperature electrical resistivity (conductivity) of the film is 1.6 x 10 8 Ω cm (6.25 x 10 -9 S cm -1 ) with an activation energy of 0.67 eV in the temperature range 300-550 K. It exhibited cathodic electrochromism in the lithium containing electrolyte (0.5 M LiClO 4 + propylene carbonate).

  6. Directed synthesis of bio-inorganic vanadium oxide composites using genetically modified filamentous phage

    International Nuclear Information System (INIS)

    Mueller, Michael; Baik, Seungyun; Jeon, Hojeong; Kim, Yuchan; Kim, Jungtae; Kim, Young Jun

    2015-01-01

    Highlights: • Phage is an excellent seeding for bio-templates for environmentally benign vanadium oxide nanocomposite synthesis. • The synthesized bio-inorganic vanadium oxide showed photodegradation activities. • The fabricated wt phage/vanadium oxide composite exhibited bundle-like structure. • The fabricated RSTB-phage/vanadium oxide composite exhibited a ball with a fiber-like nanostructure. • The virus/vanadium oxide composite could be applied in photocatalysts, sensors and nanoelectronic applications. - Abstract: The growth of crystalline vanadium oxide using a filamentous bacteriophage template was investigated using sequential incubation in a V 2 O 5 precursor. Using the genetic modification of the bacteriophage, we displayed two cysteines that constrained the RSTB-1 peptide on the major coat protein P8, resulting in vanadium oxide crystallization. The phage-driven vanadium oxide crystals with different topologies, microstructures, photodegradation and vanadium oxide composites were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), quartz microbalance and dissipation (QCM-D) and X-ray photoelectron spectroscopy (XPS). Non-specific electrostatic attraction between a wild-type phage (wt-phage) and vanadium cations in the V 2 O 5 precursor caused phage agglomeration and fiber formation along the length of the viral scaffold. As a result, the addition of recombinant phage (re-phage) in V 2 O 5 precursors formed heterogeneous structures, which led to efficient condensation of vanadium oxide crystal formation in lines, shown by QCM-D analysis. Furthermore, re-phage/V x O x composites showed significantly enhanced photodegradation activities compared with the synthesized wt-phage-V 2 O 5 composite under illumination. This study demonstrates that peptide-mediated vanadium oxide mineralization is governed by a complicated interplay of peptide sequence, local structure, kinetics and the presence of a mineralizing

  7. Synthesis of vanadium oxide powders by evaporative decomposition of solutions

    International Nuclear Information System (INIS)

    Lawton, S.A.; Theby, E.A.

    1995-01-01

    Powders of the vanadium oxides V 2 O 4 , V 6 O 13 , and V 2 O 5 were produced by thermal decomposition of aqueous solutions of vanadyl sulfate hydrate in atmospheres of N 2 , H 2 mixed with N 2 , or air. The composition of the oxide powder was determined by the reactor temperature and gas composition. Residual sulfur concentrations in powders produced by decomposition at 740 C were less than 1 at.%, and these powders consisted of hollow, roughly spherical aggregates of particles less than 1 microm in diameter

  8. Structural and silver/vanadium ratio effects on silver vanadium phosphorous oxide solution formation kinetics: impact on battery electrochemistry.

    Science.gov (United States)

    Bock, David C; Takeuchi, Kenneth J; Marschilok, Amy C; Takeuchi, Esther S

    2015-01-21

    The detailed understanding of non-faradaic parasitic reactions which diminish battery calendar life is essential to the development of effective batteries for use in long life applications. The dissolution of cathode materials including manganese, cobalt and vanadium oxides in battery systems has been identified as a battery failure mechanism, yet detailed dissolution studies including kinetic analysis are absent from the literature. The results presented here provide a framework for the quantitative and kinetic analyses of the dissolution of cathode materials which will aid the broader community in more fully understanding this battery failure mechanism. In this study, the dissolution of silver vanadium oxide, representing the primary battery powering implantable cardioverter defibrillators (ICD), is compared with the dissolution of silver vanadium phosphorous oxide (Ag(w)VxPyOz) materials which were targeted as alternatives to minimize solubility. This study contains the first kinetic analyses of silver and vanadium solution formation from Ag0.48VOPO4·1.9H2O and Ag2VP2O8, in a non-aqueous battery electrolyte. The kinetic results are compared with those of Ag2VO2PO4 and Ag2V4O11 to probe the relationships among crystal structure, stoichiometry, and solubility. For vanadium, significant dissolution was observed for Ag2V4O11 as well as for the phosphate oxide Ag0.49VOPO4·1.9H2O, which may involve structural water or the existence of multiple vanadium oxidation states. Notably, the materials from the SVPO family with the lowest vanadium solubility are Ag2VO2PO4 and Ag2VP2O8. The low concentrations and solution rates coupled with their electrochemical performance make these materials interesting alternatives to Ag2V4O11 for the ICD application.

  9. Magnetism variations and susceptibility hysteresis at the metal-insulator phase transition temperature of VO2 in a composite film containing vanadium and tungsten oxides

    CSIR Research Space (South Africa)

    Akande, AA

    2015-02-01

    Full Text Available We report on the magnetic property of 0.67–WO3+0.33–VOx mixture film deposit on the corning glass substrate using the chemical sol–gel and atmospheric pressure chemical vapour deposition (APCVD) methods. The XRD and Raman spectroscopy confirm...

  10. Electron Microscopy Characterization of Vanadium Dioxide Thin Films and Nanoparticles

    Science.gov (United States)

    Rivera, Felipe

    Vanadium dioxide (VO_2) is a material of particular interest due to its exhibited metal to insulator phase transition at 68°C that is accompanied by an abrupt and significant change in its electronic and optical properties. Since this material can exhibit a reversible drop in resistivity of up to five orders of magnitude and a reversible drop in infrared optical transmission of up to 80%, this material holds promise in several technological applications. Solid phase crystallization of VO_2 thin films was obtained by a post-deposition annealing process of a VO_{x,x approx 2} amorphous film sputtered on an amorphous silicon dioxide (SiO_2) layer. Scanning electron microscopy (SEM) and electron-backscattered diffraction (EBSD) were utilized to study the morphology of the solid phase crystallization that resulted from this post-deposition annealing process. The annealing parameters ranged in temperature from 300°C up to 1000°C and in time from 5 minutes up to 12 hours. Depending on the annealing parameters, EBSD showed that this process yielded polycrystalline vanadium dioxide thin films, semi-continuous thin films, and films of isolated single-crystal particles. In addition to these films on SiO_2, other VO_2 thin films were deposited onto a-, c-, and r-cuts of sapphire and on TiO_2(001) heated single-crystal substrates by pulsed-laser deposition (PLD). The temperature of the substrates was kept at ˜500°C during deposition. EBSD maps and orientation imaging microscopy were used to study the epitaxy and orientation of the VO_2 grains deposited on the single crystal substrates, as well as on the amorphous SiO_2 layer. The EBSD/OIM results showed that: 1) For all the sapphire substrates analyzed, there is a predominant family of crystallographic relationships wherein the rutile VO_2{001} planes tend to lie parallel to the sapphire's {10-10} and the rutile VO_2{100} planes lie parallel to the sapphire's {1-210} and {0001}. Furthermore, while this family of

  11. Characterization and Electrical Response to Humidity of Sintered Polymeric Electrospun Fibers of Vanadium Oxide-({TiO}_{{2}} /{WO}_{{3}} )

    Science.gov (United States)

    Araújo, E. S.; Libardi, J.; Faia, P. M.; de Oliveira, H. P.

    2018-02-01

    Metal oxide composites have attracted much consideration due to their promising applications in humidity sensors in response to the physical and chemical property modifications of the resulting materials. This work focused on the preparation, microstructural characterization and analysis of humidity-dependent electrical properties of undoped and vanadium oxide (V2O5)-doped titanium oxide/tungsten oxide (TiO2/WO3) sintered ceramic films obtained by electrospinning. The electrical properties were investigated by impedance spectroscopy (400 Hz-40 MHz) as a function of relative humidity (RH). The results revealed a typical transition in the transport mechanisms controlled by the appropriated doping level of V2O5, which introduces important advantages to RH detection due to the atomic substitution of titanium by vanadium atoms in highly doped structures. These aspects are directly related to the microstructure modification and structure fabrication procedure.

  12. Hysteresis Phenomena in Sulfur Dioxide Oxidation over Supported Vanadium Catalysts

    DEFF Research Database (Denmark)

    Masters, Stephen G.; Eriksen, Kim Michael; Fehrmann, Rasmus

    1997-01-01

    Catalyst deactivation and hysteresis behavior in industrial SO2-oxidation catalysts have been studied in the temperature region 350-480 C by combined in situ EPR spectroscopy and catalytic activity measurements. The feed gas composition simulated sulfuric acid synthesis gas and wet/dry de......NOx'ed flue gas. The vanadium (IV) compound K4(VO)3(SO4)5 precipitated during all the investigated conditions hence causing catalyst deactivation. Hysteresis behavior of both the catalytic activity and the V(IV) content was observed during reheating....

  13. Study of propane partial oxidation on vanadium-containing catalysts

    Energy Technology Data Exchange (ETDEWEB)

    Komashko, G.A.; Khalamejda, S.V.; Zazhigalov, V.A. [AN Ukrainskoj SSR, Kiev (Ukraine). Inst. Fizicheskoj Khimii

    1998-12-31

    The present results indicate that maximum selectivity to acrylic acid can be reached over V-P-Zr-O catalysts. When the hydrocarbon concentration is 5.1 vol.% the selectivity is about 30% at quite high paraffin conversion. Conclusively, some explanations to the observed facts can be given. The V-P-O catalyst promotion with lanthanum by means of mechanochemical treatment is distinguished by the additive uniform spreading all over the matrix surface. Such twophase system is highly active in propane conversion (lanthanum oxide) and further oxidation of the desired products. The similar properties are attributed to V-P-Bi-La-O catalyst. Bismuth, tellurium and zirconium additives having clearly defined acidic properties provoke the surface acidity strengthening and make easier desorption of the acidic product (acrylic acid) from the surface lowering its further oxidation. Additionally, since bismuth and zirconium are able to form phosphates and, according to, to create space limitations for the paraffin molecule movement out of the active group boundaries, this can be one more support in favour of the selectivity increase. With this point of view very interesting results were obtained. It has been shown that the more limited the size of the vanadium unit, the higher the selectivity is. Monoclinic phase AV{sub 2}P{sub 2}O{sub 10} which consists in clusters of four vanadium atoms is sensibly more reactive than the orthorhombic phase consists in V{sub {infinity}} infinite chains. (orig.)

  14. Optimization of conditions for growth of vanadium dioxide thin films on silicon by pulsed-laser deposition

    Science.gov (United States)

    Shibuya, Keisuke; Sawa, Akihito

    2015-10-01

    We systematically examined the effects of the substrate temperature (TS) and the oxygen pressure (PO2) on the structural and optical properties polycrystalline V O2 films grown directly on Si(100) substrates by pulsed-laser deposition. A rutile-type V O2 phase was formed at a TS ≥ 450 °C at PO2 values ranging from 5 to 20 mTorr, whereas other structures of vanadium oxides were stabilized at lower temperatures or higher oxygen pressures. The surface roughness of the V O2 films significantly increased at growth temperatures of 550 °C or more due to agglomeration of V O2 on the surface of the silicon substrate. An apparent change in the refractive index across the metal-insulator transition (MIT) temperature was observed in V O2 films grown at a TS of 450 °C or more. The difference in the refractive index at a wavelength of 1550 nm above and below the MIT temperature was influenced by both the TS and PO2, and was maximal for a V O2 film grown at 450 °C under 20 mTorr. Based on the results, we derived the PO2 versus 1/TS phase diagram for the films of vanadium oxides, which will provide a guide to optimizing the conditions for growth of V O2 films on silicon platforms.

  15. Optimization of conditions for growth of vanadium dioxide thin films on silicon by pulsed-laser deposition

    Directory of Open Access Journals (Sweden)

    Keisuke Shibuya

    2015-10-01

    Full Text Available We systematically examined the effects of the substrate temperature (TS and the oxygen pressure (PO2 on the structural and optical properties polycrystalline V O2 films grown directly on Si(100 substrates by pulsed-laser deposition. A rutile-type V O2 phase was formed at a TS ≥ 450 °C at PO2 values ranging from 5 to 20 mTorr, whereas other structures of vanadium oxides were stabilized at lower temperatures or higher oxygen pressures. The surface roughness of the V O2 films significantly increased at growth temperatures of 550 °C or more due to agglomeration of V O2 on the surface of the silicon substrate. An apparent change in the refractive index across the metal–insulator transition (MIT temperature was observed in V O2 films grown at a TS of 450 °C or more. The difference in the refractive index at a wavelength of 1550 nm above and below the MIT temperature was influenced by both the TS and PO2, and was maximal for a V O2 film grown at 450 °C under 20 mTorr. Based on the results, we derived the PO2 versus 1/TS phase diagram for the films of vanadium oxides, which will provide a guide to optimizing the conditions for growth of V O2 films on silicon platforms.

  16. Stabilized chromium oxide film

    Science.gov (United States)

    Garwin, Edward L.; Nyaiesh, Ali R.

    1988-01-01

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  17. Oxidation films morphology

    International Nuclear Information System (INIS)

    Paidassi, J.

    1960-01-01

    After studying the oxidation of several pure polyvalent metals (Fe, Cu, Mn, Ni, U) and of their oxides at high temperature and atmospheric pressure, the author suggests how to modify the usual representation of the oxide film (a piling of different oxide layers, homogeneous on a micrographic scale with a equi-axial crystallisation, free of mechanical tensions, with flat boundary surfaces) to have it nearer to reality. In this first part, the author exposes the study of the real micrographic structure of the oxidation film and gives examples of precipitation in the oxides during the cooling of the oxidised sample. (author) [fr

  18. The influence of deposition temperature on vanadium dioxide thin films microstructure and physical properties

    Directory of Open Access Journals (Sweden)

    Velaphi Msomi

    2010-10-01

    Full Text Available Vanadium dioxide thin films were successfully prepared on soda lime glass substrates using the optimised conditions for r.f-inverted cylindrical magnetron sputtering. The optimised deposition parameters were fixed and then a systematic study of the effect of deposition temperature, ranging from 450 °C to 550 °C, on the microstructure of thermochromic thin films was carried out. The deposited films were found to be well crystallised, showing strong texture corresponding to the (011 plane, indicating the presence of vanadium dioxide.

  19. In-Plane Impedance Spectroscopy measurements in Vanadium Dioxide thin films

    Science.gov (United States)

    Ramirez, Juan; Patino, Edgar; Schmidt, Rainer; Sharoni, Amos; Gomez, Maria; Schuller, Ivan

    2012-02-01

    In plane Impedance Spectroscopy measurements have been done in Vanadium Dioxide thin films in the range of 100 Hz to 1 MHz. Our measurements allows distinguishing between the resistive and capacitive response of the Vanadium Dioxide films across the metal-insulator transition. A non ideal RC behavior was found in our thin films from room temperature up to 334 K. Around the MIT, an increase of the total capacitance is observed. A capacitor-network model is able to reproduce the capacitance changes across the MIT. Above the MIT, the system behaves like a metal as expected, and a modified equivalent circuit is necessary to describe the impedance data adequately.

  20. Dehydrogenation of Ethylbenzene with Carbon Dioxide as Soft Oxidant over Supported Vanadium-Antimony Oxide Catalyst

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Do Young; Vislovskiy, Vladislav P.; Yoo, Jin S.; Chang, Jong San [Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of); Park, Sang Eon [Inha University, Incheon (Korea, Republic of); Park, Min Seok [Mongolia International University, Ulaanbaatar (Mongolia)

    2005-11-15

    This work presents that carbon dioxide, which is a main contributor to the global warming effect, could be utilized as a selective oxidant in the oxidative dehydrogenation of ethylbenzene. The dehydrogenation of ethylbenzene over alumina-supported vanadium-antimony oxide catalyst has been studied under different atmospheres such as inert nitrogen, steam, oxygen or carbon dioxide as diluent or oxidant. Among them, the addition of carbon dioxide gave the highest styrene yield (up to 82%) and styrene selectivity (up to 97%) along with stable activity. Carbon dioxide could play a beneficial role of a selective oxidant in the improvement of the catalytic behavior through the oxidative pathway.

  1. Vanadium oxide V2O5 reaction with calcium metavanadate

    International Nuclear Information System (INIS)

    Krasnenko, T.I.; Slobodin, B.V.; Zhilyaev, V.A.

    1983-01-01

    Complex physicochemical studies on the V 2 O 5 Ca(VO 3 ) 2 mixtures, annealed under different conditions, were conducted. It was established that the V 2 O 5 -Ca(VO 3 ) 2 system is characterized by the following features: defective structure of initial components, which are in equilibrium state; irreversible structural transformation without changes in the macrosymmetry (530 deg C) of calcium metavanadate, deficient in calcium and oxygen; melting of eutectic mixture of components which are in equilibrium at 616+-3 deg C; Ca(VO 3 ) 2 melting with decomposition at 775+-3 deg C. Besides this, the formation of oxide vanadium bronze of β-type calcium is possible under some conditions (narrow temperature range, certain partial oxygen pressure, etc)

  2. High rate capability of lithium/silver vanadium oxide cells

    International Nuclear Information System (INIS)

    Takeuchi, E.S.; Zelinsky, M.A.; Keister, P.

    1986-01-01

    High rate characteristics of the lithium/silver vanadium oxide system were investigated in test cells providing four different limiting surface areas. The cells were tested by constant current and constant resistance discharge with current densities ranging from 0.04 to 6.4 mA/cm/sup 2/. The maximum current density under constant resistance and constant current discharges which would deliver 50% of theoretical capacity was determined. The ability of the cells to deliver high current pulses was evaluated by application of 10 second pulses with current densities ranging from 3 to 30 mA/cm/sup 2/. The voltage delay characteristics of the cells were determined after 1 to 3 months of storage at open circuit voltage or under low level background currents. The volumetric and gravimetric energy density of the SVO system is compared to other cathode materials

  3. Ab Initio Calculations of Transport Properties of Vanadium Oxides

    Science.gov (United States)

    Lamsal, Chiranjivi; Ravindra, N. M.

    2018-04-01

    The temperature-dependent transport properties of vanadium oxides have been studied near the Fermi energy using the Kohn-Sham band structure approach combined with Boltzmann transport equations. V2O5 exhibits significant thermoelectric properties, which can be attributed to its layered structure and stability. Highly anisotropic electrical conduction in V2O5 is clearly manifested in the calculations. Due to specific details of the band structure and anisotropic electron-phonon interactions, maxima and crossovers are also seen in the temperature-dependent Seebeck coefficient of V2O5. During the phase transition of VO2, the Seebeck coefficient changes by 18.9 µV/K, which is close to (within 10% of) the observed discontinuity of 17.3 µV/K.

  4. Directed synthesis of bio-inorganic vanadium oxide composites using genetically modified filamentous phage

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, Michael; Baik, Seungyun [Environmental Safety Group, Korea Institute of Science and Technology Europe (KIST-Europe) Forschungsgesellschaft mbH, Campus E 7 1, Saarbruecken (Germany); Jeon, Hojeong; Kim, Yuchan [Center for Biomaterials, Biomedical Research Institute Korea Institute of Science and Technology (KIST), Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Kim, Jungtae [Environmental Safety Group, Korea Institute of Science and Technology Europe (KIST-Europe) Forschungsgesellschaft mbH, Campus E 7 1, Saarbruecken (Germany); Kim, Young Jun, E-mail: youngjunkim@kist-europe.de [Environmental Safety Group, Korea Institute of Science and Technology Europe (KIST-Europe) Forschungsgesellschaft mbH, Campus E 7 1, Saarbruecken (Germany)

    2015-05-15

    Highlights: • Phage is an excellent seeding for bio-templates for environmentally benign vanadium oxide nanocomposite synthesis. • The synthesized bio-inorganic vanadium oxide showed photodegradation activities. • The fabricated wt phage/vanadium oxide composite exhibited bundle-like structure. • The fabricated RSTB-phage/vanadium oxide composite exhibited a ball with a fiber-like nanostructure. • The virus/vanadium oxide composite could be applied in photocatalysts, sensors and nanoelectronic applications. - Abstract: The growth of crystalline vanadium oxide using a filamentous bacteriophage template was investigated using sequential incubation in a V{sub 2}O{sub 5} precursor. Using the genetic modification of the bacteriophage, we displayed two cysteines that constrained the RSTB-1 peptide on the major coat protein P8, resulting in vanadium oxide crystallization. The phage-driven vanadium oxide crystals with different topologies, microstructures, photodegradation and vanadium oxide composites were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), quartz microbalance and dissipation (QCM-D) and X-ray photoelectron spectroscopy (XPS). Non-specific electrostatic attraction between a wild-type phage (wt-phage) and vanadium cations in the V{sub 2}O{sub 5} precursor caused phage agglomeration and fiber formation along the length of the viral scaffold. As a result, the addition of recombinant phage (re-phage) in V{sub 2}O{sub 5} precursors formed heterogeneous structures, which led to efficient condensation of vanadium oxide crystal formation in lines, shown by QCM-D analysis. Furthermore, re-phage/V{sub x}O{sub x} composites showed significantly enhanced photodegradation activities compared with the synthesized wt-phage-V{sub 2}O{sub 5} composite under illumination. This study demonstrates that peptide-mediated vanadium oxide mineralization is governed by a complicated interplay of peptide sequence, local structure

  5. Partial Oxidation of n-Butane over a Sol-Gel Prepared Vanadium Phosphorous Oxide

    Directory of Open Access Journals (Sweden)

    Juan M. Salazar

    2013-01-01

    Full Text Available Vanadium phosphorous oxide (VPO is traditionally manufactured from solid vanadium oxides by synthesizing VOHPO4∙0.5H2O (the precursor followed by in situ activation to produce (VO2P2O7 (the active phase. This paper discusses an alternative synthesis method based on sol-gel techniques. Vanadium (V triisopropoxide oxide was reacted with ortho-phosphoric acid in an aprotic solvent. The products were dried at high pressure in an autoclave with a controlled excess of solvent. This procedure produced a gel of VOPO4 with interlayer entrapped molecules. The surface area of the obtained materials was between 50 and 120 m2/g. Alcohol produced by the alkoxide hydrolysis reduced the vanadium during the drying step, thus VOPO4 was converted to the precursor. This procedure yielded non-agglomerated platelets, which were dehydrated and evaluated in a butane-air mixture. Catalysts were significantly more selective than the traditionally prepared materials with similar intrinsic activity. It is suggested that the small crystallite size obtained increased their selectivity towards maleic anhydride.

  6. Vanadium oxide monolayer catalysts : The vapor-phase oxidation of methanol

    NARCIS (Netherlands)

    Roozeboom, Fred; Cordingley, Peter D.; Gellings, P.J.

    1981-01-01

    The oxidation of methanol over vanadium oxide, unsupported and applied as a monolayer on γ-Al2O3, CeO2, TiO2, and ZrO2, was studied between 100 and 400 °C in a continuous-flow reactor. At temperatures from 150 to about 250 °C two main reactions take place, (a) dehydration of methanol to dimethyl

  7. Processing, characterization, and bactericidal activity of undoped and silver-doped vanadium oxides

    Energy Technology Data Exchange (ETDEWEB)

    Tousley, M.E.; Wren, A.W.; Towler, M.R. [Inamori School of Engineering, Alfred University, Alfred, NY 14803 (United States); Mellott, N.P., E-mail: mellott@alfred.edu [Inamori School of Engineering, Alfred University, Alfred, NY 14803 (United States)

    2012-12-14

    Vanadium oxide (V) and silver-doped vanadium oxide (Ag-V) powders were prepared via sol-gel processing. Structural evolution and bactericidal activity was examined as a function of temperature ranging from 250, 350, 450 and 550 Degree-Sign C. Powders were characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and Raman spectroscopy. Results from all techniques showed vanadium pentoxide (V{sub 2}O{sub 5}) is the predominant phase regardless of heat treatment temperature or the addition of silver (Ag). XRD analysis suggests Ag is present as AgCl in samples heat treated to 250, 350, and 450 Degree-Sign C and as AgV{sub 6}O{sub 15} at 550 Degree-Sign C. Bactericidal activity was evaluated against Escherichia coli using the agar disk diffusion method considering both Ag-V and undoped, V powders. While the addition of Ag significantly increased bactericidal properties, the specific Ag valency, or crystal structure and morphology formed at higher temperatures, had little effect on functionality. -- Highlights: Black-Right-Pointing-Pointer Vanadium and silver-doped vanadium oxide powders were prepared via sol-gel. Black-Right-Pointing-Pointer Powders were characterized using advanced, complementary structural techniques. Black-Right-Pointing-Pointer Bactericidal activity was evaluated against E. coli. Black-Right-Pointing-Pointer Both vanadium and silver doped vanadium oxide show bactericidal activity.

  8. Radiation modification of vanadium catalyst for anthracene oxidation

    International Nuclear Information System (INIS)

    Norek, J.; Vymetal, J.; Mucka, V.; Pospisil, M.; Cabicar, J.

    1985-01-01

    Vanadium pentoxide on a suitable carrier is often used as catalyst for the oxidation of anthracene in the gaseous phase to 9,10-anthraquinone. The activity and selectivity of the catalyst may be affected by irradiation. The effects were studied of gamma radiation on the properties of the catalyst where the active system was a V 2 O 5 -KOH-K 2 SO 4 mixture on a Al 2 O 3 +SiO 2 carrier. The 60 Co radiation source had an activity of 185 TBq; the carrier of the catalyst was irradiated at a dose rate of 3.05, 1.98 and 0.084 kGy/h to a total dose of 10 kGy. Irradiation increased the selectivity of the catalyst such that in the oxidation temperature optimum of 300 to 400 degC the yield of 9,10-anthraquinone increased by 4.6 to 4.8 %mol. to roughly 90 %mol.; a significant reduction of the content of acid components (phthalanhydride) in the oxidation product also occurred. This effect remained unchanged for 5 months after irradiation. A reduction of selectivity was observed at lower dose rates only in the temperature range between 400 and 480 degC. (A.K.)

  9. Self-assembling Synthesis of Vanadium Oxide Nanotubes and Simple Determination of the Content of Ⅴ(Ⅳ)

    Institute of Scientific and Technical Information of China (English)

    MAI Li-qiang; CHEN Wen; XU Qing; ZHU Quan-yao; HAN Chun-hua; PENG Jun-feng

    2003-01-01

    High-yielding low-cost vanadium oxide nanotubes were prepared by the hydrothermal self-assembling process from vanadium pentoxide and organic molecules as structure-directing templates. Moreover, a new method was discovered for determining the content of V (Ⅳ) in vanadium oxide nanotubes by thermogravimetric analysis ( TGA ). This method is simple, precise and feasible and can be extended to determine the content of low oxidation state in the other transition metal oxide nanomaterials.

  10. Factors influencing charge capacity of vanadium pentoxide thin films during lithium ion intercalation/deintercalation cycles

    International Nuclear Information System (INIS)

    Alamarguy, D.; Castle, J. E.; Ibris, N.; Salvi, A. M.

    2007-01-01

    The intercalation of vanadium pentoxide by lithium ions leads to a change in optical properties, a process that is of value in thin-film electrochromic devices. In this study, films of V 2 O 5 , deposited on indium tin oxide (ITO) glass coupons by a sol-gel process, were challenged by increasing numbers of charge-discharge cycles ranging from 72 to 589 full cycles. The samples were characterized by x-ray photoelectron spectroscopy (XPS) and then examined in the deintercalated state by time-of-flight secondary ion mass spectroscopy (SIMS). XPS enabled measurement of the thickness and composition of the solid-electrolyte interface and provided evidence of the residual V 4+ concentration within the top few nanometers of the surface. The SIMS profile gave direct information on the thickness of the films and on the thickness loss caused by rinsing the samples after the electrochemical exposure. Determination, by SIMS, of the concentration of lithium ions has enabled a correction to be made for the amount of inactive material within the electrochemically active region of the film. The SIMS depth profiles for lithium in the four samples are similar, with a marked buildup of Li at the interface with the ITO. This interphase zone had a thickness of ∼27 nm and was electrochemically inactive, enabling a further correction to be made. Thus, by means of the XPS and the SIMS results the chemistry and thickness of the films could be fully characterized. The remaining inconsistency between capacity (between 35% and 100% of the anticipated charge) and number of cycles is ascribed to edge effects arising from the method used for production of the coupons

  11. Metallic oxide switches using thick film technology

    Science.gov (United States)

    Patel, D. N.; Williams, L., Jr.

    1974-01-01

    Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

  12. Statistical analysis on hollow and core-shell structured vanadium oxide microspheres as cathode materials for Lithium ion batteries

    Directory of Open Access Journals (Sweden)

    Xing Liang

    2018-06-01

    Full Text Available In this data, the statistical analyses of vanadium oxide microspheres cathode materials are presented for the research article entitled “Statistical analyses on hollow and core-shell structured vanadium oxides microspheres as cathode materials for Lithium ion batteries” (Liang et al., 2017 [1]. This article shows the statistical analyses on N2 adsorption-desorption isotherm and morphology vanadium oxide microspheres as cathode materials for LIBs. Keywords: Adsorption-desorption isotherm, Pore size distribution, SEM images, TEM images

  13. Influence of vanadium oxidation states on the performance of V-Mg-Al mixed-oxide catalysts for the oxidative dehydrogenation of propane

    International Nuclear Information System (INIS)

    Schacht, L.; Navarrete, J.; Schacht, P.; Ramirez, M. A.

    2010-01-01

    V-Mg-Al mixed-oxide catalysts for oxidative dehydrogenation of propane were prepared by thermal decomposition of Mg-Al-layered double hydroxides with vanadium interlayer doping. The obtained catalysts were tested for the oxidative dehydrogenation of propane, obtaining good results in catalytic activity (conversion 16.55 % and selectivity 99.97 %) Results indicated that catalytic performance of these materials depends on how vanadium is integrated in the layered structure, which is determined by the Mg/Al ratio. Vanadium interlayer doping modifies the oxidation state of vanadium and consequently catalytic properties. Surface properties were studied by X-ray photoelectron spectroscopic and diffuse reflectance, UV-visible spectroscopy, and temperature programmed reduction. The analyses provided information about the oxidation state, before and after the reaction. From these results, it is suggested that selectivity to propylene and catalytic activity depend mainly of vanadium oxidation state. (Author)

  14. Influence of vanadium oxidation states on the performance of V-Mg-Al mixed-oxide catalysts for the oxidative dehydrogenation of propane

    Energy Technology Data Exchange (ETDEWEB)

    Schacht, L. [IPN, Escuela Superior de Fisica y Matematicas, Departamento de Ciencia de Materiales, Av. IPN s/n, Edificio 9, Col. Lindavista, 07738 Mexico D. F. (Mexico); Navarrete, J.; Schacht, P.; Ramirez, M. A., E-mail: pschacha@imp.m [Instituto Mexicano del Petroleo, Programa de Ingenieria Molecular, Eje Central Lazaro Cardenas No. 152, 07730 Mexico D. F. (Mexico)

    2010-07-01

    V-Mg-Al mixed-oxide catalysts for oxidative dehydrogenation of propane were prepared by thermal decomposition of Mg-Al-layered double hydroxides with vanadium interlayer doping. The obtained catalysts were tested for the oxidative dehydrogenation of propane, obtaining good results in catalytic activity (conversion 16.55 % and selectivity 99.97 %) Results indicated that catalytic performance of these materials depends on how vanadium is integrated in the layered structure, which is determined by the Mg/Al ratio. Vanadium interlayer doping modifies the oxidation state of vanadium and consequently catalytic properties. Surface properties were studied by X-ray photoelectron spectroscopic and diffuse reflectance, UV-visible spectroscopy, and temperature programmed reduction. The analyses provided information about the oxidation state, before and after the reaction. From these results, it is suggested that selectivity to propylene and catalytic activity depend mainly of vanadium oxidation state. (Author)

  15. Lithium-Vanadium bronzes as model catalysts for the selective reduction of nitric oxide

    NARCIS (Netherlands)

    Bosch, H.; Bongers, Annemie; Enoch, Gert; Snel, Ruud; Ross, Julian R.H.

    1989-01-01

    The effect of alkali metals on the selective reduction of nitric oxide with ammonia has been studied on bulk iron oxide and bulk vanadium oxide. The influence of additions of LiOH, NaOH and KOH on the activity was screened by pulse experiments carried out in the absence of gaseous oxygen; FTIR

  16. Sputtered indium oxide films

    International Nuclear Information System (INIS)

    Gillery, F.H.

    1986-01-01

    A method is described for depositing on a substrate multiple layer films comprising at least one primary layer of a metal oxide and at least one primary layer of a metal other than the metal of the oxide layer. The improvement described here comprises improving the adhesion between the metal oxide and metal layers by depositing between the layers an intermediate metal-containing layer having an affinity for both the metal and metal oxide layers. An article of manufacture is described comprising a nonmetallic substrate, and deposited thereon in any order: a. at least one coating layer of metal; b. at least one coating layer of an oxide of a metal other than the metal of the metal layer; and c. deposited between the metal and metal oxide layers an intermediate metal-containing layer having an affinity for both the metal and metal oxide layers

  17. Hybrid polyaniline/bentonite-vanadium(V) oxide nanocomposites

    International Nuclear Information System (INIS)

    Anaissi, F.J.; Demets, G.J.-F.; Timm, R.A.; Toma, H.E.

    2003-01-01

    This work focuses on the preparation and properties of novel ternary composites generated from the redox polymerization of aniline inside the lamellar bentonite-vanadium(V) oxide (BV) matrix. These materials are stable in water and usual organic solvents, and their good electrical conductivity ensures potential applications as electrode modifiers, for analytical and sensor purposes. The incorporation of polyaniline (pani) into the BV matrices, leads to the decay of the charge transfer band at 450 nm and to the rise of a strong band around 650 nm, reflecting the reduction of V V sites, concomitant with the formation of polyaniline, in the emeraldine form. The modest expansion (∼2.5 A) observed in the pani intercalated composites, is consistent with the orientation of the polyaniline chains parallel with the interlamellar planes. On the other hand, the presence of intercalated polymer seems to stabilize the BV framework, minimizing the structural reorganization usually required for the insertion of lithium ions into the matrix. Interestingly, in small amounts, e.g. in BV(pani) 0.7 , polyaniline dramatically increases the conductivity and charge-capacity of the BV matrix; while, increasing amounts of polyaniline lead to an opposing effect

  18. Visible photocatalytic properties of vanadium doped zinc oxide aerogel nanopowder

    Energy Technology Data Exchange (ETDEWEB)

    Slama, R. [Laboratoire de Physique des Materiaux et des Nanomateriaux appliquee a l' Environnement, Faculte des Sciences de Gabes, Universite de Gabes, Cite Erriadh Manara Zrig, 6072 Gabes (Tunisia); Unite de Recherche Environnement, Catalyse et Analyse des procedes URECAP (UR/99/11-20), Ecole Nationale d' Ingenieurs de Gabes, Universite de Gabes, Route de Medenine 6029 Gabes (Tunisia); Ghribi, F. [Laboratoire de Physique des Materiaux et des Nanomateriaux appliquee a l' Environnement, Faculte des Sciences de Gabes, Universite de Gabes, Cite Erriadh Manara Zrig, 6072 Gabes (Tunisia); Houas, A. [Unite de Recherche Environnement, Catalyse et Analyse des procedes URECAP (UR/99/11-20), Ecole Nationale d' Ingenieurs de Gabes, Universite de Gabes, Route de Medenine 6029 Gabes (Tunisia); Barthou, C. [Institut des NanoSciences de Paris (INSP), UPMC Universite Paris 6, CNRS UMR 7588, 140 rue de Lourmel, F-75015 Paris France (France); El Mir, L., E-mail: Lassaad.ElMir@fsg.rnu.tn [Laboratoire de Physique des Materiaux et des Nanomateriaux appliquee a l' Environnement, Faculte des Sciences de Gabes, Universite de Gabes, Cite Erriadh Manara Zrig, 6072 Gabes (Tunisia); College of Sciences, Department of Physics, Al-Imam Muhammad Ibn Saud University, Riyadh 11623 (Saudi Arabia)

    2011-06-30

    Vanadium-doped zinc oxide nanoparticles have been synthesized by sol-gel method. In our approach the water for hydrolysis used in the synthesis of nanopowder was slowly released followed by a thermal drying in ethyl alcohol at 250 deg. C. The obtained nanopowder was characterized by various techniques such as particle size analysis, scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and photoluminescence (PL). In the as-prepared state, the powder with an average particle size of 25 nm presents a strong luminescence band in the visible range. From photoluminescence excitation (PLE) the energy position of the obtained PL band depends on the excitation wavelength and this PL band can be also observed under visible excitations. This result is very promising for visible photo catalysis applications, which was confirmed by methylene blue photo-degradation using visible lamp as a light source. - Research Highlights: > We explore the impact of plot size on estimation of a small watershed outputs. > Different lengths and fixed width plots were installed on two slope aspects. > The performance of two similar sets of experimental plots was examined. > The optimal lengths for estimation of sediment and runoff were finally found.

  19. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  20. Comparative ion insertion study into a nanostructured vanadium oxide in aqueous salt solutions

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Q.; Ren, S. L.; Zukowski, J.; Pomeroy, M.; Soghomonian, V., E-mail: soghomon@vt.edu [Department of Physics, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2014-07-07

    We present a comparative study for the electrochemical insertion of different cations into a nanostructured vanadium oxide material. The oxide is hydrothemally synthesized and electrically characterized by variable temperature measurements. The electrochemical reactions are performed in aqueous chloride solutions of lithium, sodium, potassium, and ammonium, and the electrochemical behavior of various cycles are correlated with visual changes in the vanadium oxide nanosheets as observed by scanning electron microscopy. We note an increase in the specific charge per cycle in the cases of sodium and ammonium ions only, correlated with minimal physical changes to the nanosheets. The differing behavior of the various ions has implications for their use in electrical energy storage applications.

  1. Vanadium oxide nanotubes as cathode material for Mg-ion batteries

    DEFF Research Database (Denmark)

    Christensen, Christian Kolle; Sørensen, Daniel Risskov; Bøjesen, Espen Drath

    Vanadium oxide compounds as cathode material for secondary Li-ion batteries gained interest in the 1970’s due to high specific capacity (>250mAh/g), but showed substantial capacity fading.1 Developments in the control of nanostructured morphologies have led to more advanced materials, and recently...... vanadium oxide nanotubes (VOx-NT) were shown to perform well as a cathode material for Mg-ion batteries.2 The VOx-NTs are easily prepared via a hydrothermal process to form multiwalled scrolls of VO layer with primary amines interlayer spacer molecules.3 The tunable and relative large layer spacing 1-3 nm...... synchrotron powder X-ray diffraction measured during battery operation. These results indicate Mg-intercalation in the multiwalled VOx-NTs occurs within the space between the individual vanadium oxide layers while the underlying VOx frameworks constructing the walls are affected only to a minor degree...

  2. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  3. The active component of vanadium-molybdenum catalysts for the oxidation of acrolein to acrylic acid

    International Nuclear Information System (INIS)

    Andrushkevich, T.V.; Kuznetsova, T.G.

    1986-01-01

    The catalytic properties of the vanadium-molybdenum oxide system were investigated in the oxidation of acrolein to acrylic acid. The active component of the catalyst is the compound VMo 3 O 11 , the maximum amount of which is observed at a content of 7-15 mole% V 2 O 4 . The compound VMo 3 O 11 is formed in the thermodecomposition of silicomolybdovanadium heteropoly acids or isopoly compounds, reduced with respect to vanadium, and contains V 4+ and Mo 6+ . The optimum treatment for the formation of this compound is treatment in the reaction mixture at 400 degrees C

  4. Determination of trace vanadium using its catalytic effect on the oxidation of gallic acid by bromate

    International Nuclear Information System (INIS)

    Yamane, Takeshi; Fukasawa, Tsutomu

    1976-01-01

    The oxidation of gallic acid by bromate with trace vanadium as catalyst was followed spectrophotometrically by measurements of absorbance change at 420 nm. The reaction rate was obtained graphically from the absorbance vs. time curve in the range of about 15 to 40 min. reaction time. The reaction rate was proportional to the concentration of vanadium(V) in the range 0--120 ng (under the conditions of 5.3x10 -3 M gallic acid, 6.0x10 -3 M potassium bromate, pH 3.8) and 0--30 ng (1.1x10 -2 M gallic acid, 2.7x10 -2 M potassium bromate, pH 3.8). Using this relationship, the concentration of vanadium as low as 0.1 ng/ml can be determined. The relative standard deviations at 50 ng and 20 ng of vanadium were 3.5% (n=14) and 4.0% (n=10), respectively. Iron(III) interfered seriously even when present in 20 times the amounts of vanadium. Up to 60 times, W(VI), Mo(VI) and iodide did not interfere. Many of the other ions examined were found to have no effect or slight effect even when present in 1000 times the amounts of vanadium. Other factors affecting the reaction rate were also studied. (auth.)

  5. Nature of active vanadium nanospecies in MCM-41 type catalysts for olefins oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Chanquía, Corina M., E-mail: cchanquia@cab.cnea.gov.ar [Centro Atómico Bariloche, Comisión Nacional de Energía Atómica (CAB-CNEA). Av. Bustillo 9500, R8402AGP, San Carlos de Bariloche, Río Negro (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET). Avenida Rivadavia 1917, C1033AAJ, Ciudad Autónoma de Buenos Aires (Argentina); Cánepa, Analía L. [Centro de Investigación y Tecnología Química (CITeQ), Universidad Tecnológica Nacional, Facultad Regional Córdoba (UTN-FRC), Maestro López esq. Cruz Roja Argentina, Ciudad Universitaria, 5016, Córdoba Capital (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET). Avenida Rivadavia 1917, C1033AAJ, Ciudad Autónoma de Buenos Aires (Argentina); Winkler, Elin L. [Centro Atómico Bariloche, Comisión Nacional de Energía Atómica (CAB-CNEA). Av. Bustillo 9500, R8402AGP, San Carlos de Bariloche, Río Negro (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET). Avenida Rivadavia 1917, C1033AAJ, Ciudad Autónoma de Buenos Aires (Argentina); and others

    2016-06-01

    A multi-technique physicochemical investigation including UV–Vis-DRS, Raman spectroscopy, XPS, ESR and FTIRS with pyridine adsorption was performed to analyze the nature of different vanadium nanospecies present on MCM-41 type catalysts. By employing a direct hydrothermal synthesis, vanadium species were incorporated into siliceous structure mainly as tetrahedrally coordinated isolated V{sup δ+} ions, which would be located inside the wall and on the wall surface of the mesoporous channels. The coexistence of both vanadium oxidation states V{sup 4+} and V{sup 5+} was also revealed. Acidity measurements permitted to infer about the majority presence of Lewis acid sites, which increase with vanadium content. The catalytic performance of these materials was evaluated in the reaction of α-pinene oxidation with H{sub 2}O{sub 2}. The highest intrinsic activity of the sample with lower V loading was attributed to the high dispersion and efficiency of the isolated V{sup δ+} species that actuate as active sites. A mixture of reaction products arising from competitive processes of epoxidation and allylic oxidation was found. - Highlights: • Nature of vanadium nanospecies in mesoporous silicates was investigated. • From hydrothermal sol–gel synthesis, isolated V{sup δ+} sites were mainly generated. • The coexistence of both vanadium oxidation states V{sup 4+} and V{sup 5+} was revealed. • The catalytic performance was evaluated in α-pinene oxidation with H{sub 2}O{sub 2}. • The high catalytic activity is attributed to high dispersion of isolated V{sup δ+} ions.

  6. Thermochemistry of the complex oxides of uranium, vanadium, and alkali metals

    International Nuclear Information System (INIS)

    Karyakin, N.V.; Chernorukov, N.G.; Suleimanov, E.V.; Kharyushina, E.A.

    1992-01-01

    The standard enthalpies of the formation at T 298.15 K of complex oxides of uranium(VI), vanadium(V) and alkali metals with the general formula M 1 VUO 6 where M 1 = Na, K, Rb, and Cs, were calculated from the results of calorimetric experiments and from published data. 8 refs., 1 tab

  7. Study of vanadium based mesoporous silicas for oxidative dehydrogenation of propane and n-butane

    Czech Academy of Sciences Publication Activity Database

    Bulánek, R.; Kalužová, A.; Setnička, M.; Zukal, Arnošt; Čičmanec, P.; Mayerová, Jana

    2012-01-01

    Roč. 179, č. 1 (2012), s. 149-158 ISSN 0920-5861 R&D Projects: GA ČR GAP106/10/0196 Institutional research plan: CEZ:AV0Z40400503 Keywords : vanadium * oxidative dehydrogenation * mesoporous silicas Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.980, year: 2012

  8. Oxidative dehydrogenation of ethane over vanadium supported on mesoporous materials of M41S family

    Czech Academy of Sciences Publication Activity Database

    Čapek, J.; Adam, J.; Grygar, Tomáš; Bulánek, R.; Vradman, L.; Košová-Kučerová, G.; Čičmanec, P.; Knotek, P.

    2008-01-01

    Roč. 342, 1-2 (2008), s. 99-106 ISSN 0926-860X Grant - others:GA ČR(CZ) GP104/07/P038 Program:GP Institutional research plan: CEZ:AV0Z40320502 Keywords : oxidative dehydrogenation * ethane * vanadium * mesoporous materials Subject RIV: CA - Inorganic Chemistry Impact factor: 3.190, year: 2008

  9. Importance of Vanadium-Catalyzed Oxidation of SO2to SO3in Two-Stroke Marine Diesel Engines

    DEFF Research Database (Denmark)

    Colom, Juan M.; Alzueta, María U.; Christensen, Jakob Munkholt

    2016-01-01

    Low-speed marine diesel engines are mostly operated on heavy fuel oils, which have a high content of sulfur andash, including trace amounts of vanadium, nickel, and aluminum. In particular, vanadium oxides could catalyze in-cylinderoxidation of SO2 to SO3, promoting the formation of sulfuric acid...

  10. Fluorometric determination of vanadium (V) by utilizing its catalytic effect on the oxidation of o-aminophenol by chlorate

    Energy Technology Data Exchange (ETDEWEB)

    Hiraki, K; Shimizu, N; Nishikawa, Y [Kinki Univ., Higashi-Osaka, Osaka (Japan). Faculty of Science and Technology; Shigematsu, T

    1981-12-01

    The oxidation of o-aminophenol by chlorate ion takes place in acidic milieu and is catalyzed by a trace amount of vanadium (V). Vanadium (V) oxidizes o-aminophenol to 2-amino-3-phenoxazone, then the vanadium (IV) produced is reoxidized to vanadium (V) by the sodium chlorate. Further oxidation of o-aminophenol proceeds by repetition of these reactions. The oxidation product (2-amino-3-phenoxazone) gives an intense fluorescence; under optimum conditions, the fluorescence intensity is proportional to the concentration of vanadium. The most suitable concentration of o-aminophenol and sodium chlorate for the determination of vanadium (V) were found to be 0.02 M and 2 x 10/sup -4/ M, respectively. From 0.1 ppm to 5 ppm of vanadium (V) can be determined under the optimum conditions; reaction temperature 50/sup 0/C, reaction time 2 h, and at pH 2 +- 0.2. If the reaction time is increased to 3 h at 55/sup 0/C, the method may be extended from 2 ppb to 15 ppb of vanadium. Interferences of diverse ions were tested, among which Fe (III) and Mn (VII) caused positive errors, and Cr (VI), Mo (VI) negative errors if present in 40 fold w/w ratio to V (V).

  11. Parallel critical magnetic fields of superconducting hyperthin films of vanadium and technetium

    International Nuclear Information System (INIS)

    Teplov, A.A.; Mikheeva, M.N.

    1980-01-01

    The nature of limiting parallel magnetic fields Hsub(c parallel) destroying a superconducting state in films of vanadium and technetium is found out. A dependence of Hsub(c parallel) on the thickness of films up to d approximately 60 A is studied. The |dHsub(c parallel)sup(2)/dT|sub(Tsub(c)) derivative, which increases in the region of large d with the increase of 1/d and achieves the maximum va;ue at d approximately 100 A, was determined, using the experimental data. For the most thin films this derivative tends to drop (the value of the derivative changes from 16 up to 20.00 kOe 2 /k and for technetium and from 4 up to 2100 kOe 2 /k for vanadium). Such stop at |dHsub(c11)sup(2)/ dT|sub(Tsub(c)) growth during the decrease of d is not explained in the framework of the theory taking into account only orbital effects. An account of the additional paramagnetic effect (spin effects) leads to a good agreement of the experiment with the theory in the whole range of thicknesses for vanadium. For technetium films in the d range <=110 A the value of Hsub(c parallel) exceeds several times Hsub(c parallel) calculated with provision of spin effects. For d approximately 80 A and d approximately 55 A this increase achieves the triple value. This effect is explained qualitatively by the spin-orbital scattering appearing with the increase of the atomic number

  12. One-step hydrothermal synthesis of hexangular starfruit-like vanadium oxide for high power aqueous supercapacitors

    Science.gov (United States)

    Shao, Jie; Li, Xinyong; Qu, Qunting; Zheng, Honghe

    2012-12-01

    Homogenous hexangular starfruit-like vanadium oxide was prepared for the first time by a one-step hydrothermal method. The assembly process of hexangular starfruit-like structure was observed from TEM images. The electrochemical performance of starfruit-like vanadium oxide was examined by cyclic voltammetry and galvanostatic charge/discharge. The obtained starfruit-like vanadium oxide exhibits a high power capability (19 Wh kg-1 at the specific power of 3.4 kW kg-1) and good cycling stability for supercapacitors application.

  13. Electrical properties improvement of multicrystalline silicon solar cells using a combination of porous silicon and vanadium oxide treatment

    International Nuclear Information System (INIS)

    Derbali, L.; Ezzaouia, H.

    2013-01-01

    In this paper, we will report the enhancement of the conversion efficiency of multicrystalline silicon solar cells after coating the front surface with a porous silicon layer treated with vanadium oxide. The incorporation of vanadium oxide into the porous silicon (PS) structure, followed by a thermal treatment under oxygen ambient, leads to an important decrease of the surface reflectivity, a significant enhancement of the effective minority carrier lifetime (τ eff ) and a significant enhancement of the photoluminescence (PL) of the PS structure. We Obtained a noticeable increase of (τ eff ) from 3.11 μs to 134.74 μs and the surface recombination velocity (S eff ) have decreased from 8441 cm s −1 to 195 cm s −1 . The reflectivity spectra of obtained films, performed in the 300–1200 nm wavelength range, show an important decrease of the average reflectivity from 40% to 5%. We notice a significant improvement of the internal quantum efficiency (IQE) in the used multicrystalline silicon substrates. Results are analyzed and compared to those carried out on a reference (untreated) sample. The electrical properties of the treated silicon solar cells were improved noticeably as regard to the reference (untreated) sample.

  14. Electrochemistry of hydrous oxide films

    International Nuclear Information System (INIS)

    Burke, L.D.; Lyons, M.E.G.

    1986-01-01

    The formation, acid-base properties, structural aspects, and transport processes of hydrous oxide films are discussed. Classical and nonclassical theoretical models of the oxide-solution interface are compared. Monolayer oxidation, behavior, and crystal growth of oxides on platinum, palladium, gold, iridium, rhodium, ruthenium, and some non-noble metals, including tungsten, are reviewed and compared

  15. Free-standing graphene/vanadium oxide composite as binder-free electrode for asymmetrical supercapacitor.

    Science.gov (United States)

    Deng, Lingjuan; Gao, Yihong; Ma, Zhanying; Fan, Guang

    2017-11-01

    Preparation of free-standing electrode materials with three-dimensional network architecture has emerged as an effective strategy for acquiring advanced portable and wearable power sources. Herein, graphene/vanadium oxide (GR/V 2 O 5 ) free-standing monolith composite has been prepared via a simple hydrothermal process. Flexible GR sheets acted as binder to connect the belt-like V 2 O 5 for assembling three-dimensional network architecture. The obtained GR/V 2 O 5 composite can be reshaped into GR/V 2 O 5 flexible film which exhibits more compact structure by ultrasonication and vacuum filtration. A high specific capacitance of 358Fg -1 for GR/V 2 O 5 monolith compared with that of GR/V 2 O 5 flexible film (272Fg -1 ) has been achieved in 0.5molL -1 K 2 SO 4 solution when used as binder free electrodes in three-electrode system. An asymmetrical supercapacitor has been assembled using GR/V 2 O 5 monolith as positive electrode and GR monolith as negative electrode, and it can be reversibly charged-discharged at a cell voltage of 1.7V in 0.5molL -1 K 2 SO 4 electrolyte. The asymmetrical capacitor can deliver an energy density of 26.22Whkg -1 at a power density of 425Wkg -1 , much higher than that of the symmetrical supercapacitor based on GR/V 2 O 5 monolith electrode. Moreover, the asymmetrical supercapacitor preserves 90% of its initial capacitance over 1000 cycles at a current density of 5Ag -1 . Copyright © 2017 Elsevier Inc. All rights reserved.

  16. Gasochromic response of nanocrystalline vanadium pentoxide films deposited from ethanol dispersions

    International Nuclear Information System (INIS)

    Rizzo, G.; Arena, A.; Bonavita, A.; Donato, N.; Neri, G.; Saitta, G.

    2010-01-01

    Vanadium pentoxide (V 2 O 5 ) nanocrystals having few tens nanometers average size, are obtained from ammonium metavanadate (NH 4 VO 3 ) in the presence of oleic acid, and treating the reaction product at 400 o C. Nanocrystalline films, deposited from stable ethanol suspensions of the V 2 O 5 nanopowder, adhere strongly to different kinds of substrates, without the need of any thermal post processing. At room temperature, the films are found to bleach when exposed to ammonia. Bleaching originates from the formation of ammonium metavandate, and is reversible, as after annealing in air at 350 o C, ammonium metavanadate converts back to V 2 O 5 . Formation of ammonium metavanadate, clearly evidenced by remarkable changes in infrared spectrum of V 2 O 5 films exposed to ammonia, is a valuable detection mechanism, promising in view of developing highly selective ammonia sensors operating at room temperature.

  17. Electrochemical Properties of Graphene-vanadium Oxide Composite Prepared by Electro-deposition for Electrochemical Capacitors

    International Nuclear Information System (INIS)

    Jeong, Heeyoung; Jeong, Sang Mun

    2015-01-01

    The nanostructural graphene/vanadium oxide (graphene/V 2 O 5 ) composite with enhanced capacitance was synthesized by the electro-deposition in 0.5 M VOSO 4 solution. The morphology of composites was characterized using scanning electron microscopy (SEM), x-ray diffraction pattern (XRD), and x-ray photoelectron spectroscopy (XPS). The oxidation states of the electro-deposited vanadium oxide was found to be V 5+ and V 4+ . The morphology of the prepared graphene/V 2 O 5 composite exhibits a netlike nano-structure with V 2 O 5 nanorods in about 100 nm diameter, which could lead a better contact between electrolyte an electrode. The composite with a deposition time of 4,000 s exhibits the specific capacitance of 854 mF/cm 2 at a scan rate of 20 mV/s and the capacitance retention of 53% after 1000 CV cycles

  18. X-Ray Absorption Studies of Vanadium-Containing Metal Oxide Nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Hohn, Keith, L.

    2006-01-09

    Metal oxide nanocrystals offer significant potential for use as catalysts or catalyst supports due to their high surface areas and unique chemical properties that result from the high number of exposed corners and edges. However, little is known about the catalytic activity of these materials, especially as oxidation catalysts. This research focused on the preparation, characterization and use of vanadium-containing nanocrystals as selective oxidation catalysts. Three vanadium-containing nanocrystals were prepared using a modified sol-gel procedure: V/MgO, V/SiO2, and vanadium phosphate (VPO). These represent active oxidation catalysts for a number of industrially relevant reactions. The catalysts were characterized by x-ray diffraction and Raman, UV-VIS, infrared and x-ray absorption spectroscopies with the goal of determining the primary structural and chemical differences between nanocrystals and microcrystals. The catalytic activity of these catalysts was also studied in oxidative dehydrogenation of butane and methanol oxidation to formaldehyde. V/MgO nanocrystals were investigated for activity in oxidative dehydrogenation of butane and compared to conventional V/MgO catalysts. Characterization of V/MgO catalysts using Raman spectroscopy and x-ray absorption spectroscopy showed that both types of catalysts contained magnesium orthovanadate at vanadium loadings below 15 weight%, but above that loading, magnesium pyrovanadate may have been present. In general, MgO nanocrystals had roughly half the crystal size and double the surface area of the conventional MgO. In oxidative dehydrogenation of butane, nanocrystalline V/MgO gave higher selectivity to butene than conventional V/MgO at the same conversion. This difference was attributed to differences in vanadium domain size resulting from the higher surface areas of the nanocrystalline support, since characterization suggested that similar vanadium phases were present on both types of catalysts. Experiments in

  19. Oxide ultrathin films science and technology

    CERN Document Server

    Pacchioni, Gianfranco

    2012-01-01

    A wealth of information in one accessible book. Written by international experts from multidisciplinary fields, this in-depth exploration of oxide ultrathin films covers all aspects of these systems, starting with preparation and characterization, and going on to geometrical and electronic structure, as well as applications in current and future systems and devices. From the Contents: Synthesis and Preparation of Oxide Ultrathin Films Characterization Tools of Oxide Ultrathin Films Ordered Oxide Nanostructures on Metal Surfaces Unusual Properties of Oxides and Other Insulators in the Ultrathin Limit Silica and High-K Dielectrics Thin Films in Microelectronics Oxide Passive Films and Corrosion Protection Oxide Films as Catalytic Materials and as Models of Real Catalysts Oxide Films in Spintronics Oxide Ultrathin Films in Solid Oxide Fuel Cells Transparent Conducting and Chromogenic Oxide Films as Solar Energy Materials Oxide Ultrathin Films in Sensor Applications Ferroelectricity in Ultrathin Film Capacitors T...

  20. Effect of thermal treatment conditions on properties of vanadium molybdenum oxide catalyst in acrolein oxidation reaction to acrylic acid

    International Nuclear Information System (INIS)

    Gorshkova, T.P.; Tarasova, D.V.; Olen'kova, I.P.; Andrushkevich, T.V.; Nikoro, T.A.

    1984-01-01

    The effect of thermal treatment conditions (temperature and gas medium) on properties of vanadium molybdenum oxide catalyst in acrolein oxidation reaction to acrylic acid is investigated. It is shown that active and selective catalysts are formed in the course of thermal decomposition of the drying product of ammonium metavanadate and paramolybdate under the conditions ensuring the vanadium ion reduction up to tetravalent state with conservation of molybdenum oxidation degree equal to 6. It is possible to realize it either by treatment of the catalyst calcinated in the air flow at 300 deg by the reaction mixture at the activation stage or by gas-reducer flow treatment at 280 deg. Thermal treatment in the reducing medium of the oxidized catalyst does not lead to complete regeneration of its properties

  1. Decomposition of hydrogen peroxide on nickel oxide - vanadium pentoxide catalysts and the effect of ionizing radiation on them

    International Nuclear Information System (INIS)

    Mucka, V.

    1984-01-01

    Some physico-chemical and catalytic properties of nickel oxide-vanadium pentoxide two-component catalysts were studied over the entire concentration range of the components, using the decomposition of hydrogen peroxide in an aqueous solution as the test reaction. The two oxides were found to affect each other; this was shown by the dependences of the specific surface area, the V 4+ ion concentration, and the catalyst activity on the system composition. At low vanadium pentoxide concentrations (up to 15 mol%) the reaction took place on nickel oxide modified with vanadium pentoxide, whereas in the region of higher vanadium pentoxide concentrations the decomposition of the peroxide was catalyzed primarily in the homogeneous phase by vanadium(V) peroxide ions; in a sample with 30 mol% V 2 O 5 , trivalent vanadium also played a part. With catalysts obtained by mere mechanical mixing of the two oxides, a modified activity was observed in the region of high excess of nickel oxide. The activity of catalyst, particularly pure nickel oxide, was increased by its partial reduction and decreased by its exposure to gamma radiation if the dose was higher than 10 5 Gy. The effects observed are interpreted in terms of the concept of bivalent catalytic centres. (author)

  2. Tuning the conductivity of vanadium dioxide films on silicon by swift heavy ion irradiation

    Directory of Open Access Journals (Sweden)

    H. Hofsäss

    2011-09-01

    Full Text Available We demonstrate the generation of a persistent conductivity increase in vanadium dioxide thin films grown on single crystal silicon by irradiation with 1 GeV 238U swift heavy ions at room temperature. VO2 undergoes a temperature driven metal-insulator-transition (MIT at 67 °C. After room temperature ion irradiation with high electronic energy loss of 50 keV/nm the conductivity of the films below the transition temperature is strongly increased proportional to the ion fluence of 5·109 U/cm2 and 1·1010 U/cm2. At high temperatures the conductivity decreases slightly. The ion irradiation slightly reduces the MIT temperature. This observed conductivity change is persistent and remains after heating the samples above the transition temperature and subsequent cooling. Low temperature measurements down to 15 K show no further MIT below room temperature. Although the conductivity increase after irradiation at such low fluences is due to single ion track effects, atomic force microscopy (AFM measurements do not show surface hillocks, which are characteristic for ion tracks in other materials. Conductive AFM gives no evidence for conducting ion tracks but rather suggests the existence of conducting regions around poorly conducting ion tracks, possible due to stress generation. Another explanation of the persistent conductivity change could be the ion-induced modification of a high resistivity interface layer formed during film growth between the vanadium dioxide film and the n-Silicon substrate. The swift heavy ions may generate conducting filaments through this layer, thus increasing the effective contact area. Swift heavy ion irradiation can thus be used to tune the conductivity of VO2 films on silicon substrates.

  3. Graphite furnace atomic absorption spectrometric determination of vanadium after cloud point extraction in the presence of graphene oxide

    Science.gov (United States)

    López-García, Ignacio; Marín-Hernández, Juan José; Hernández-Córdoba, Manuel

    2018-05-01

    Vanadium (V) and vanadium (IV) in the presence of a small concentration of graphene oxide (0.05 mg mL-1) are quantitatively transferred to the coacervate obtained with Triton X-114 in a cloud point microextraction process. The surfactant-rich phase is directly injected into the graphite atomizer of an atomic absorption spectrometer. Using a 10-mL aliquot sample and 150 μL of a 15% Triton X-114 solution, the enrichment factor for the analyte is 103, which results in a detection limit of 0.02 μg L-1 vanadium. The separation of V(V) and V(IV) using an ion-exchanger allows speciation of the element at low concentrations. Data for seven reference water samples with certified vanadium contents confirm the reliability of the procedure. Several beer samples are also analyzed, those supplied as canned drinks showing low levels of tetravalent vanadium.

  4. Positron annihilation in sodium and copper β-vanadium oxide bronzes

    International Nuclear Information System (INIS)

    Dryzek, J.; Rogowska, E.

    1990-01-01

    Studies of copper and sodium β-vanadium oxide bronzes are performed using positron annihilation measured with a long slit angular correlation apparatus. The dependences of peak coincidence rate on temperature (40 to 310deg C) are obtained for different concentrations of donor atoms in the case of copper vanadium oxide bronzes. A three-states model corresponding to the annihilation of positrons in donor atom sublattice is applied for the description of the experimental data. The creation enthalpy of vacancies for that sublattice is equal to (0.60 ± 0.01) eV for Na 0.33 V 2 O 5 and equal to (0.64 ± 0.01) eV for Cu x V 2 O 5 . (author)

  5. Vanadium oxide (VO) based low cost counter electrode in dye sensitized solar cell (DSSC) applications

    Energy Technology Data Exchange (ETDEWEB)

    Vijayakumar, P.; Pandian, Muthu Senthil; Ramasamy, P., E-mail: ramasamyp@ssn.edu.in [SSN Research Centre, SSN College of Engineering, Kalavakkam-603 110, Chennai, Tamilnadu (India)

    2015-06-24

    Vanadium oxide nanostars were synthesized by chemical method. The prepared Vanadium oxide nanostars are introduced into dye sensitized solar cell (DSSC) as counter electrode (CE) catalyst to replace the expensive platinum (Pt). The products were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and Brunauer–Emmett–Teller (BET) method. The photovoltaic performance of the VO as counter electrode based DSSC was evaluated under simulated standard global AM 1.5G sunlight (100 mW/cm{sup 2}). The solar to electrical energy conversion efficiency (η) of the DSSC was found to be 0.38%.This work expands the Counter electrode catalyst, which can help to reduce the cost of DSSC and thereby encourage their fundamental research and commercial application.

  6. Investigation on the oxidation behavior of AlCrVxN thin films by means of synchrotron radiation and influence on the high temperature friction

    Science.gov (United States)

    Tillmann, Wolfgang; Kokalj, David; Stangier, Dominic; Paulus, Michael; Sternemann, Christian; Tolan, Metin

    2018-01-01

    Friction minimization is an important topic which is pursued in research and industry. In addition to the use of lubricants, friction-reducing oxide phases can be utilized which occur during. These oxides are called Magnéli phases and especially vanadium oxides exhibit good friction reducing properties. Thereby, the lubrication effect can be traced back to oxygen deficiencies. AlCrN thin films are being used as coatings for tools which have to withstand high temperatures. A further improvement of AlCrN thin films concerning their friction properties is possible by incorporation of vanadium. This study analyzes the temperature dependent oxidation behavior of magnetron sputtered AlCrVN thin films with different vanadium contents up to 13.5 at.-% by means of X-ray diffraction and X-ray absorption near-edge spectroscopy. Up to 400 °C the coatings show no oxidation. A higher temperature of 700 °C leads to an oxidation and formation of Magnéli phases of the coatings with vanadium contents above 10.7 at.-%. Friction coefficients, measured by ball-on-disk test are correlated with the oxide formation in order to figure out the effect of vanadium oxides. At 700 °C a decrease of the friction coefficient with increasing vanadium content can be observed, due to the formation of VO2, V2O3 and the Magnéli phase V4O7.

  7. Vanadium nitride as a novel thin film anode material for rechargeable lithium batteries

    International Nuclear Information System (INIS)

    Sun Qian; Fu Zhengwen

    2008-01-01

    Vanadium mononitride (VN) thin films have been successfully fabricated by magnetron sputtering. Its electrochemical behaviour with lithium was examined by galvanostatic cell cycling and cyclic voltammetry. The capacity of VN was found to be stable above 800 mAh g -1 after 50 cycles. By using ex situ X-ray diffraction, high-resolution transmission electron microscopy and selected area electron diffraction as well as in situ spectroelectrochemical measurements, the electrochemical reaction mechanism of VN with lithium was investigated. The reversible conversion reaction of VN into metal V and Li 3 N was revealed. The high reversible capacity and good stable cycle of VN thin film electrode made it a new promising lithium-ion storage material for future rechargeable lithium batteries

  8. V6O13 films by control of the oxidation state from aqueous precursor to crystalline phase.

    Science.gov (United States)

    Peys, Nick; Ling, Yun; Dewulf, Daan; Gielis, Sven; De Dobbelaere, Christopher; Cuypers, Daniel; Adriaensens, Peter; Van Doorslaer, Sabine; De Gendt, Stefan; Hardy, An; Van Bael, Marlies K

    2013-01-28

    An aqueous deposition process for V(6)O(13) films is developed whereby the vanadium oxidation state is continuously controlled throughout the entire process. In the precursor stage, a controlled wet chemical reduction of the vanadium(V) source with oxalic acid is achieved and monitored by (51)Vanadium Nuclear Magnetic Resonance ((51)V-NMR) and Ultraviolet-Visible (UV-Vis) spectroscopy. The resulting vanadium(IV) species in the aqueous solution are identified as mononuclear citrato-oxovanadate(IV) complexes by Electron Paramagnetic Resonance (EPR) and Fourier Transform Infra-Red (FTIR) spectroscopy. This precursor is successfully employed for the deposition of uniform, thin films. The optimal deposition and annealing conditions for the formation of crystalline V(6)O(13), including the control of the vanadium oxidation state, are determined through an elaborate study of processing temperature and O(2) partial pressure. To ensure a sub 100 nm adjustable film thickness, a non-oxidative intermediate thermal treatment is carried out at the end of each deposition cycle, allowing maximal precursor decomposition while still avoiding V(IV) oxidation. The resulting surface hydrophilicity, indispensable for the homogeneous deposition of the next layer, is explained by an increased surface roughness and the increased availability of surface vanadyl groups. Crystalline V(6)O(13) with a preferential (002) orientation is obtained after a post deposition annealing in a 0.1% O(2) ambient for thin films with a thickness of 20 nm.

  9. Controlled synthesis and electrochemical properties of vanadium oxides with different nanostructures

    International Nuclear Information System (INIS)

    Zhang, Yifu; Zhou, Min; Huang, Chi; Chen, Chongxue; Cao, Yuliang; Fan, Meijuan; Li, Houbin; Liu, Xinghai; Xie, Guangyong

    2012-01-01

    Vanadium oxides (V 3 O 7 .H 2 O and VO 2 ) with different morphologies have been selectively synthesized by a facile hydrothermal approach using glucose as the reducing and structure-directing reagent. The as-obtained V 3 O 7 .H 2 O nanobelts have a length up to several tens of micrometers, width of about 60-150 nm and thickness of about 5-10 nm, while the as-prepared VO 2 (B) nanobelts have a length of about 1.0- 7 μm, width, 80-140 nm and thickness, 2-8 nm. It was found that the quantity of glucose, the reaction temperature and the reaction time had significant influence on the compositions and morphologies of final products. Vanadium oxides with different morphologies were easily synthesized by controlling the concentration of glucose. The formation mechanism was also briefly discussed, indicating that glucose played different roles in synthesizing various vanadium oxides. The phase transition from VO 2 (B) to VO 2 (M) were investigated and the phase transition temperature of the VO 2 (M) appeared at around 68 deg C. Furthermore, the electrochemical properties of V 3 O 7 .H 2 O nanobelts, VO 2 (B) nanobelts and VO 2 (B) nanosheets were investigated and they exhibited a high initial discharge capacity of 296, 247 and 227 mAh/g, respectively. (author)

  10. Oxidation of vanadium carbide in air; Oxidacion de carburo de vanadio en aire

    Energy Technology Data Exchange (ETDEWEB)

    Ruiz, A.; Troiani, L.; Materan, E. [Universidad Simon Bolivar, Depto. de la Ciencia de los Materiales, Grupo de Ingenieria de Superficies e Interfaces, Caracas, Venezuela, (Venezuela)

    1998-12-31

    It was studied the samples oxidation of vanadium carbide (V{sub 8}C{sub 7}), synterized and in powder, in order to know the temperature influence and the aggregation state in the kinetics and the oxidation products. The assays were realized in static air, at temperature between 600 y 750 Centigrade, between 6 and 24 hours periods. The gaseous products were analyzed through gas chromatography while the condensates ones were analyzed through optical microscopy and scanning electron microscopy, X-ray diffraction and chemical analysis by X-ray fluorescence analysis. It was found that in the V{sub 8}C{sub 7} oxidation occurs two basic processes: the gaseous oxides production which results of the carbon oxidation, fundamentally CO{sub 2}, and the vanadium condensate oxides production, fundamentally V{sub 2}O{sub 5}. In the synterized samples assayed under 650 Centigrade, the kinetics is lineal with loss of mass, suggesting a control by the formation of gaseous products in the sample surface, while in the synterized samples assayed over 650 Centigrade, it occurs a neat gain of mass, which is attributed to vanadium pentoxide fusion. These processes produce stratified layers of V{sub 2}O{sub 5} although at higher temperatures also it was detected V{sub 2}O{sub 4}. The superficial area effect is revealed in what the powder samples always experiment a mass neat increase in all essay temperatures, being the condensate oxidation products, fundamentally V{sub 2}O{sub 5} and V{sub 6}O{sub 13}. (Author)

  11. Role of copper/vanadium on the optoelectronic properties of reactive RF magnetron sputtered NiO thin films

    Science.gov (United States)

    Panneerselvam, Vengatesh; Chinnakutti, Karthik Kumar; Thankaraj Salammal, Shyju; Soman, Ajith Kumar; Parasuraman, Kuppusami; Vishwakarma, Vinita; Kanagasabai, Viswanathan

    2018-04-01

    In this study, pristine nickel oxide (NiO), copper-doped NiO (Cu-NiO) and vanadium-doped NiO (V-NiO) thin films were deposited using reactive RF magnetron co-sputtering as a function of dopant sputtering power. Cu (0-8 at%) and V (0-1 at%) were doped into the NiO lattice by varying the sputtering power of Cu and V in the range of 5-15 W. The effect of dopant concentration on optoelectronic behavior is investigated by UV-Vis-NIR spectrophotometer and Hall measurements. XRD analysis showed that the preferred orientation of the cubic phase for undoped NiO changes from (200) to (111) plane when the sputtering parameters are varied. The observed changes in the lattice parameters and bonding states of the doped NiO indicate the substitution of Ni ions by monovalent Cu and trivalent V ions. The optical bandgap of pristine NiO, Cu-NiO, and V-NiO was found to be 3.6, 3.45, and 3.05 eV, respectively, with decreased transmittance and resistivity. Further analysis using SEM and AFM described the morphological behavior of doped NiO thin films and Raman spectroscopy indicated the structural changes on doping. These findings would be helpful in fabricating solid-state solar cells using doped NiO as efficient hole transporting material.

  12. Effects of Vanadium Ions in Different Oxidation States on Myosin ATPase Extracted from the Solitary Ascidian, Halocynthia roretzi (Drasche) : Biochemistry

    OpenAIRE

    HITOSHI, MICHIBATA; YUTAKA, ZENKO; KENJI, YAMADA; MASATO, HASEGAWA; TATSURO, TERADA; TAKAHARU, NUMAKUANI; Biological Institute, Faculty of Science, Toyama University; Biological Institute, Faculty of Science, Toyama University; Biological Institute, Faculty of Science, Toyama University; Biological Institute, Faculty of Science, Toyama University; Department of Chemistry, Toyama College of Technology; Marine Biological Station, Tohoku University

    1989-01-01

    Some ascidians are known to accumulate vanadium ion within their tissues by 10^6-fold as that in sea water and store the metal ion in its reduced tetravalent and/or trivalent states. It is also well known that phosphoenzymes are inhibited by pentavalent vanadium ion over a range of 10nM to 1mM. In the present experiment we have therefore examined the effects of vanadium ions in different oxidation states on the activity of myosin ATPase extracted from the mantle of the ascidian, Halocynthia r...

  13. Sulfonated graphene oxide/nafion composite membrane for vanadium redox flow battery.

    Science.gov (United States)

    Kim, Byung Guk; Han, Tae Hee; Cho, Chang Gi

    2014-12-01

    Nafion is the most frequently used as the membrane material due to its good proton conductivity, and excellent chemical and mechanical stabilities. But it is known to have poor barrier property due to its well-developed water channels. In order to overcome this drawback, graphene oxide (GO) derivatives were introduced for Nafion composite membranes. Sulfonated graphene oxide (sGO) was prepared from GO. Both sGO and GO were treated each with phenyl isocyanate and transformed into corresponding isGO and iGO in order to promote miscibility with Nafion. Then composite membranes were obtained, and the adaptability as a membrane for vanadium redox flow battery (VRFB) was investigated in terms of proton conductivity and vanadium permeability. Compared to a pristine Nafion, proton conductivities of both isGO/Nafion and iGO/Nafion membranes showed less temperature sensitivity. Both membranes also showed quite lower vanadium permeability at room temperature. Selectivity of the membrane was the highest for isGO/Nafion and the lowest for the pristine Nafion.

  14. Effects of thickness on the nanocrystalline structure and semiconductor-metal transition characteristics of vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Zhenfei, E-mail: zhfluo8@yahoo.com [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Zhou, Xun, E-mail: zx_zky@yahoo.com [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Yan, Dawei [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Wang, Du; Li, Zeyu [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Yang, Cunbang [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Jiang, Yadong [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2014-01-01

    Nanocrystalline vanadium dioxide (VO{sub 2}) thin films were grown on glass substrates by using reactive direct current magnetron sputtering and in situ thermal treatments at low preparation temperatures (≤ 350 °C). The VO{sub 2} thin films were characterized by grazing-incidence X-ray diffraction, field emission scanning electron microscope, transmission electron microscopy and spectroscopic ellipsometry (SE). The semiconductor-metal transition (SMT) characteristics of the films were investigated by four-point probe resistivity measurements and infrared spectrometer equipped with heating pads. The testing results showed that the crystal structure, morphology, grain size and semiconductor-metal transition temperature (T{sub SMT}) significantly changed as the film thickness decreased. Multilayer structures were observed in the particles of thinner films whose average particle size is much larger than the film thickness and average VO{sub 2} grain size. A competition mechanism between the suppression effect of decreased thickness and coalescence of nanograins was proposed to understand the film growth and the formation of multilayer structure. The value of T{sub SMT} was found to decrease as average VO{sub 2} grain size became smaller, and SE results showed that small nanograin size significantly affected the electronic structure of VO{sub 2} film. - Highlights: • Nanocrystalline vanadium dioxide thin films were prepared. • Multilayer structures were observed in the films with large particles. • The transition temperature of the film is correlated with its electronic structure.

  15. Effects of thickness on the nanocrystalline structure and semiconductor-metal transition characteristics of vanadium dioxide thin films

    International Nuclear Information System (INIS)

    Luo, Zhenfei; Zhou, Xun; Yan, Dawei; Wang, Du; Li, Zeyu; Yang, Cunbang; Jiang, Yadong

    2014-01-01

    Nanocrystalline vanadium dioxide (VO 2 ) thin films were grown on glass substrates by using reactive direct current magnetron sputtering and in situ thermal treatments at low preparation temperatures (≤ 350 °C). The VO 2 thin films were characterized by grazing-incidence X-ray diffraction, field emission scanning electron microscope, transmission electron microscopy and spectroscopic ellipsometry (SE). The semiconductor-metal transition (SMT) characteristics of the films were investigated by four-point probe resistivity measurements and infrared spectrometer equipped with heating pads. The testing results showed that the crystal structure, morphology, grain size and semiconductor-metal transition temperature (T SMT ) significantly changed as the film thickness decreased. Multilayer structures were observed in the particles of thinner films whose average particle size is much larger than the film thickness and average VO 2 grain size. A competition mechanism between the suppression effect of decreased thickness and coalescence of nanograins was proposed to understand the film growth and the formation of multilayer structure. The value of T SMT was found to decrease as average VO 2 grain size became smaller, and SE results showed that small nanograin size significantly affected the electronic structure of VO 2 film. - Highlights: • Nanocrystalline vanadium dioxide thin films were prepared. • Multilayer structures were observed in the films with large particles. • The transition temperature of the film is correlated with its electronic structure

  16. Oxidative dehydration of glycerol to acrylic acid over vanadium-impregnated zeolite beta

    Energy Technology Data Exchange (ETDEWEB)

    Pestana, Carolina F.M.; Guerra, Antonio C.O.; Turci, Cassia C. [Universidade Federal do Rio de Janeiro, RJ (Brazil). Inst. de Quimica; Ferreira, Glaucio B. [Universidade Federal Fluminense, Niteroi, RJ (Brazil). Inst. de Quimica; Mota, Claudio J.A., E-mail: cmota@iq.ufrj.br [INCT Energia e Ambiente, Universidade Federal do Rio de Janeiro, RJ (Brazil)

    2013-01-15

    The oxidative dehydration of glycerol to acrylic acid was studied over vanadium-impregnated zeolite Beta. Catalysts were prepared by wet impregnation of ammonium metavanadate over ammonium-exchanged zeolite Beta, followed by air calcination at 823 K. Impregnation reduced the specific surface area, but did not significantly affected the acidity (Bronsted and Lewis) of the zeolites. The catalytic evaluation was carried out in a fixed bed flow reactor using air as the carrier and injecting glycerol by means of a syringe pump. Acrolein was the main product, with acetaldehyde and hydroxy-acetone (acetol) being also formed. Acrylic acid was formed with approximately 25% selectivity at 548 K over the impregnated zeolites. The result can be explained by XPS (X-ray photoelectron spectroscopy) measurements, which indicated a good dispersion of the vanadium inside the pores. (author)

  17. Oxidative dehydration of glycerol to acrylic acid over vanadium-impregnated zeolite beta

    International Nuclear Information System (INIS)

    Pestana, Carolina F.M.; Guerra, Antonio C.O.; Turci, Cassia C.

    2013-01-01

    The oxidative dehydration of glycerol to acrylic acid was studied over vanadium-impregnated zeolite Beta. Catalysts were prepared by wet impregnation of ammonium metavanadate over ammonium-exchanged zeolite Beta, followed by air calcination at 823 K. Impregnation reduced the specific surface area, but did not significantly affected the acidity (Bronsted and Lewis) of the zeolites. The catalytic evaluation was carried out in a fixed bed flow reactor using air as the carrier and injecting glycerol by means of a syringe pump. Acrolein was the main product, with acetaldehyde and hydroxy-acetone (acetol) being also formed. Acrylic acid was formed with approximately 25% selectivity at 548 K over the impregnated zeolites. The result can be explained by XPS (X-ray photoelectron spectroscopy) measurements, which indicated a good dispersion of the vanadium inside the pores. (author)

  18. Kinetics and mechanism of oxidation of acetanilide by quinquevalent vanadium in acid medium

    International Nuclear Information System (INIS)

    Gupta, R.

    1990-01-01

    The kinetics of the oxidation of acetanilide with vanadium(V) in sulphuric acid medium at constant ionic strength has been studied. The reaction is first order with oxidant. The order of reaction in acetanilide varies from one to zero. The reaction follows an acid catalyzed independent path, exhibiting square dependence in H + . A Bunnett plot indicates that the water acts as a nucleophile. The thermodynamic parameters have been computed. A probable reaction mechanism and rate law consistent with these data are given. (Author)

  19. Localized and collectivized behaviour of d-electrons in complicated titanium, vanadium and niobium oxides

    International Nuclear Information System (INIS)

    Bazuev, G.V.; Shvejkin, G.P.

    1980-01-01

    On the basis of investigation of electric and magnetic properties of oxide compounds of transition metals made are the conclusions on the degree of localization and delocalization of d-electrons in them. Generalized are the investigation results of complicated titanium, vanadium, niobium oxide compounds in low degrees of oxidation with rare earth and alkaline earth elements belonging to the two structural types: perovskite and pyrochlore. Presented are the results of investigations of perovskite-like solid solutions and of variable-content phases containing cations of transition metals in two different oxidation degrees: oxide niobium bronzes of two-valent europium and titanium bronzes of rare-earth elements, as well as Lnsub(1-x)Msub(x)Vsub(1-x)sup(3+)Vsub(x)sup(4+)Osub(3), where M is an alkaline earth element

  20. Methanol Oxidation Using Ozone on Titania-Supported Vanadium Catalyst

    Science.gov (United States)

    Ozone-enhanced catalytic oxidation of methanol has been conducted at mild temperatures of 100 to 250NC using V2O5/TiO2 catalyst prepared by the sol-gel method. The catalyst was characterized using XRD, surface area measurements, and temperature-programmed desorption of methanol. ...

  1. Atmospheric pressure chemical vapour deposition of vanadium arsenide thin films via the reaction of VCl4 or VOCl3 with tBuAsH2

    International Nuclear Information System (INIS)

    Thomas, Tegan; Blackman, Christopher S.; Parkin, Ivan P.; Carmalt, Claire J.

    2013-01-01

    Thin films of vanadium arsenide were deposited via the dual-source atmospheric pressure chemical vapour deposition reactions of VCl 4 or VOCl 3 with t BuAsH 2 . Using the vanadium precursor VCl 4 , films were deposited at substrate temperatures of 550–600 °C, which were black-gold in appearance and were found to be metal-rich with high levels of chlorine incorporation. The use of VOCl 3 as the vanadium source resulted in films being deposited between 450 and 600 °C and, unlike when using VCl 4 , were silver in appearance. The films deposited using VOCl 3 demonstrated vanadium to arsenic ratios close to 1:1, and negligible chlorine incorporation. Films deposited using either vanadium precursor were identified as VAs using powder X-ray diffraction and possessed borderline metallic/semiconductor resistivities. - Highlights: • Formation of VAs films via atmospheric pressure chemical vapour deposition. • Films formed using VCl 4 or VOCl 3 and t BuAsH 2 . • Powder X-ray diffraction showed that crystalline VAs films were deposited. • Films from VOCl 3 had a V:As ratio close to 1 with negligible Cl incorporation. • Films were silver and possessed borderline metallic/semiconductor resistivities

  2. Influence of phosphorus and potassium impurities on the properties of vanadium oxide supported on TiO2

    NARCIS (Netherlands)

    van Hengstum, A.J.; Pranger, J.; van Ommen, J.G.; Gellings, P.J.

    1984-01-01

    The catalytic properties of vanadium oxide catalysts supported on TiO2 from Tioxide were strongly affected by phosphorus and potassium, present as impurities in the TiO2 support. The effects observed were stronaly dependent on the type of hydrocarbon oxidised. In the oxidation of toluene to benzoic

  3. Vanadium induces dopaminergic neurotoxicity via protein kinase Cdelta dependent oxidative signaling mechanisms: Relevance to etiopathogenesis of Parkinson's disease

    International Nuclear Information System (INIS)

    Afeseh Ngwa, Hilary; Kanthasamy, Arthi; Anantharam, Vellareddy; Song, Chunjuan; Witte, Travis; Houk, Robert; Kanthasamy, Anumantha G.

    2009-01-01

    Environmental exposure to neurotoxic metals through various sources including exposure to welding fumes has been linked to an increased incidence of Parkinson's disease (PD). Welding fumes contain many different metals including vanadium typically present as particulates containing vanadium pentoxide (V 2 O 5 ). However, possible neurotoxic effects of this metal oxide on dopaminergic neuronal cells are not well studied. In the present study, we characterized vanadium-induced oxidative stress-dependent cellular events in cell culture models of PD. V 2 O 5 was neurotoxic to dopaminergic neuronal cells including primary nigral dopaminergic neurons and the EC 50 was determined to be 37 μM in N27 dopaminergic neuronal cell model. The neurotoxic effect was accompanied by a time-dependent uptake of vanadium and upregulation of metal transporter proteins Tf and DMT1 in N27 cells. Additionally, vanadium resulted in a threefold increase in reactive oxygen species generation, followed by release of mitochondrial cytochrome c into cytoplasm and subsequent activation of caspase-9 (> fourfold) and caspase-3 (> ninefold). Interestingly, vanadium exposure induced proteolytic cleavage of native protein kinase Cdelta (PKCδ, 72-74 kDa) to yield a 41 kDa catalytically active fragment resulting in a persistent increase in PKCδ kinase activity. Co-treatment with pan-caspase inhibitor Z-VAD-FMK significantly blocked vanadium-induced PKCδ proteolytic activation, indicating that caspases mediate PKCδ cleavage. Also, co-treatment with Z-VAD-FMK almost completely inhibited V 2 O 5 -induced DNA fragmentation. Furthermore, PKCδ knockdown using siRNA protected N27 cells from V 2 O 5 -induced apoptotic cell death. Collectively, these results demonstrate that vanadium can exert neurotoxic effects in dopaminergic neuronal cells via caspase-3-dependent PKCδ cleavage, suggesting that metal exposure may promote nigral dopaminergic degeneration.

  4. The oxidation of organic additives in the positive vanadium electrolyte and its effect on the performance of vanadium redox flow battery

    Science.gov (United States)

    Nguyen, Tam D.; Whitehead, Adam; Scherer, Günther G.; Wai, Nyunt; Oo, Moe O.; Bhattarai, Arjun; Chandra, Ghimire P.; Xu, Zhichuan J.

    2016-12-01

    Despite many desirable properties, the vanadium redox flow battery is limited, in the maximum operation temperature that can be continuously endured, before precipitation begins in the positive electrolyte. Many additives have been proposed to improve the thermal stability of the charged positive electrolyte. However, we have found that the apparent stability, revealed in laboratory testing, is often simply an artifact of the test method and arises from the oxidation of the additive, with corresponding partial reduction of V(V) to V(IV). This does not improve the stability of the electrolyte in an operating system. Here, we examined the oxidation of some typical organic additives with carboxyl, alcohol, and multi-functional groups, in sulfuric acid solutions containing V(V). The UV-vis measurements and titration results showed that many compounds reduced the state-of-charge (SOC) of vanadium electrolyte, for example, by 27.8, 88.5, and 81.9% with the addition of 1%wt of EDTA disodium salt, pyrogallol, and ascorbic acid, respectively. The cell cycling also indicated the effect of organic additives on the cell performance, with significant reduction in the usable charge capacity. In addition, a standard screening method for thermally stable additives was introduced, to quickly screen suitable additives for the positive vanadium electrolyte.

  5. Synthesis and characterization of alumina-supported vanadium oxide catalysts prepared by the molecular designed dispersion of VO(acac)2 complexes

    NARCIS (Netherlands)

    Weckhuysen, B.M.; Baltes, M.; Voort, P. van der; Ramachandra Rao, R.; Catana, Gabriela; Schoonheydt, R.A.; Vansant, E.F.

    2000-01-01

    Alumina-supported vanadium oxide catalysts have been prepared by the molecular designed dispersion method, using the vanadyl acetylacetonate complex (VO(acac)2). The complex has been adsorbed on the support from solution, followed by thermal conversion into the corresponding supported vanadium oxide

  6. Development of Vanadium Phosphaate Catalysts for Methanol Production by Selective Oxidation of Methane.

    Energy Technology Data Exchange (ETDEWEB)

    McCormick, R.L.

    1997-10-01

    This DOE sponsored study of methane partial oxidation was initiated at Amax Research and Development in Golden, CO in October of 1993. Shortly thereafter the management of Amax closed this R&D facility and the PI moved to the Colorado School of Mines. The project was begun again after contract transfer via a novation agreement. Experimental work began with testing of vandyl pyrophosphate (VPO), a well known alkane selective oxidation catalyst. It was found that VPO was not a selective catalyst for methane conversion yielding primarily CO. However, promotion of VPO with Fe, Cr, and other first row transition metals led to measurable yields for formaldehyde, as noted in the summary table. Catalyst characterization studies indicated that the role of promoters was to stabilize some of the vanadium in the V{sup 5+} oxidation state rather than the V{sup 4+} state formally expected for (VO){sub 2}P{sub 2}O{sub 7}.

  7. Kinetic investigation of vanadium (V)/(IV) redox couple on electrochemically oxidized graphite electrodes

    International Nuclear Information System (INIS)

    Wang, Wenjun; Wei, Zengfu; Su, Wei; Fan, Xinzhuang; Liu, Jianguo; Yan, Chuanwei; Zeng, Chaoliu

    2016-01-01

    Highlights: • The VO_2"+/VO"2"+ redox reaction of the electrode could be facilitated to some extent with the increasing anodic corrosion. • A real reaction kinetic equation for the oxidation of VO"2"+ on the electrochemically oxidized electrode has been firstly obtained. • The establishment of the kinetic equation is conducive to predict polarization behaviors of the electrodes in engineering application. - Abstract: The morphology, surface composition, wettability and the kinetic parameters of the electrochemically oxidized graphite electrodes obtained under different anodic polarization conditions have been examined by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), contact angle measurements, steady-state polarization and cyclic voltammetry (CV) tests, with an attempt to investigate the inherent correlation between the physicochemical properties and the kinetic characteristics for carbon electrodes used in an all-vanadium redox flow battery (VRFB). When the anodic polarization potential raises up to 1.8 V vs. SCE, the anodic corrosion of the graphite might happen and a large number of oxygen-containing functional groups generate. The VO_2"+/VO"2"+ redox reaction can be facilitated and the reaction reversibility tends to become better with the increasing anodic potential, possibly owing to the increased surface oxides and the resulting improved wettability of the electrode. Based on this, a real reaction kinetic equation for the oxidation of VO"2"+ has been obtained on the electrode polarized at 1.8 V vs. SCE and it can be also well used to predict the polarization behavior of the oxidized electrode in vanadium (IV) acidic solutions.

  8. Heterogeneous catalysis in the liquid-phase oxidation of olefins--3. The activity of supported vanadium-chromium binary oxide catalyst for the oxidation of cyclohexene

    Energy Technology Data Exchange (ETDEWEB)

    Takehira, K; Hayakawa, T; Ishikawa, T

    1979-03-01

    The activity of supported vanadium-chromium binary oxide catalyst for the oxidation of cyclohexene to 1-cyclohexenyl hydroperoxide, 2-cyclohexene-1-one, 2-cyclohexene-1-ol, and cyclohexene oxide was due to the interaction between the metal oxides and the carriers. The oxidation reaction was carried out in benzene at 60/sup 0/C for four hours with the binary oxide supported on (GAMMA)-alumina or silica; three series of catalysts were prepared by combining the vanadium and chromium oxide components with alumina hydrate or silica sol by a kneading method. The silica-supported catalysts had the greatest activity, the highest being the V/sub 2/O/sub 5//SiO/sub 2/ system, which lost its activity quickly during the reaction. This was followed in activity by the Cr/sub 2/O/sub 3//SiO/sub 2/ system, containing the chromium(V) species. The Cr/sub 2/O/sub 3//Al/sub 2/O/sub 3/ system also had high activity and the chromium(V) species. The vanadium and chromium metal ions are probably coordinated tetrahedrally on the support, and these complexes catalyze cyclohexene autoxidation by decomposing 1-cyclohexenyl hydroperoxide.

  9. Optical properties of vanadium dioxide thin film as a windows thermochromic coating

    Directory of Open Access Journals (Sweden)

    Wu, Z. P.

    2000-06-01

    Full Text Available The optical properties of vanadium dioxide (VO2 thin film have been studied for the potential application of intelligent windows. The results show that VO2 film deposited on sapphire substrates exhibits good thermochromic effects, its IR transmittance changes 60% before and after phase transition, and has less thickness dependence than UV transmittance. Doping can significantly reduce transition temperature, such as to 30°C for 1.5% Mo doped VO2.

    Se han investigado las propiedades ópticas del dióxido de vanadio (VO2 aplicado como películas delgadas para posibles aplicaciones en ventanas inteligentes. Cuando el VO2 se deposita sobre sustratos de zafiro da lugar a efectos termocrómicos considerables; así, su transmitancia en el infrarrojo cambia en un 60 % después de la transición de fase del dióxido de vanadio, teniendo una dependencia menor con el espesor que la transmitancia en el ultravioleta. El efecto de aditivos sobre estas películas de dioxido de vanadio da lugar a una disminución de la temperatura de dicha transición responsable del efecto termocrómico, de manera que se produce a 30°C con el 1,5 % de adición de Mo.

  10. Preparation of silicon carbide-supported vanadium oxide and its application of removing NO by ammonia

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zi-Bo; Xu, Xu [Yangzhou University, College of Environmental Science and Engineering, Yangzhou, Jiangsu (China); Bai, Shu-Li [Wuyi University, College of Chemical and Environmental Engineering, Jiangmen, Guangdong (China); Guan, Yu-Jiang; Jiang, Sheng-Tao [Taizhou University, Environmental Engineering, Taizhou, Zhejiang (China)

    2017-03-15

    The aim of this work was to study the preparation of SiC-supported V{sub 2}O{sub 5} catalysts and the kinetics on selective catalytic reduction for NO with NH{sub 3} on the catalysts. Using incipient wetness impregnation methods, vanadium oxide was applied to silicon carbide to prepare a SiC-supported vanadium oxide. X-ray photoelectron spectroscopy analysis confirmed that V{sub 2}O{sub 5} existed in the prepared materials. Using the prepared materials as catalysts, selective catalytic reduction for NO by NH{sub 3} has been analyzed, and reaction kinetics on the catalysts was studied at 150-300 C. The obtained results showed that the reduction reaction on the catalysts is close to zero-order kinetics with respect to NH{sub 3}, first-order with respect to NO, and half-order to O{sub 2}. Apparent activation energy for the reduction reaction was found to be 38 kJ mol{sup -1}. The prepared materials are stable and reusable. (orig.)

  11. Graphite-graphite oxide composite electrode for vanadium redox flow battery

    International Nuclear Information System (INIS)

    Li Wenyue; Liu Jianguo; Yan Chuanwei

    2011-01-01

    Highlights: → A new composite electrode is designed for vanadium redox flow battery (VRB). → The graphite oxide (GO) is used as electrode reactions catalyst. → The excellent electrode activity is attributed to the oxygen-containing groups attached on the GO surface. → A catalytic mechanism of the GO towards the redox reactions is presumed. - Abstract: A graphite/graphite oxide (GO) composite electrode for vanadium redox battery (VRB) was prepared successfully in this paper. The materials were characterized with X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscopy. The specific surface area was measured by the Brunauer-Emmett-Teller method. The redox reactions of [VO 2 ] + /[VO] 2+ and V 3+ /V 2+ were studied with cyclic voltammetry and electrochemical impedance spectroscopy. The results indicated that the electrochemical performances of the electrode were improved greatly when 3 wt% GO was added into graphite electrode. The redox peak currents of [VO 2 ] + /[VO] 2+ and V 3+ /V 2+ couples on the composite electrode were increased nearly twice as large as that on the graphite electrode, and the charge transfer resistances of the redox pairs on the composite electrode are also reduced. The enhanced electrochemical activity could be ascribed to the presence of plentiful oxygen functional groups on the basal planes and sheet edges of the GO and large specific surface areas introduced by the GO.

  12. Zirconium oxide nanotube-Nafion composite as high performance membrane for all vanadium redox flow battery

    Science.gov (United States)

    Aziz, Md. Abdul; Shanmugam, Sangaraju

    2017-01-01

    A high-performance composite membrane for vanadium redox flow battery (VRB) consisting of ZrO2 nanotubes (ZrNT) and perfluorosulfonic acid (Nafion) was fabricated. The VRB operated with a composite (Nafion-ZrNT) membrane showed the improved ion-selectivity (ratio of proton conductivity to permeability), low self-discharge rate, high discharge capacity and high energy efficiency in comparison with a pristine commercial Nafion-117 membrane. The incorporation of zirconium oxide nanotubes in the Nafion matrix exhibits high proton conductivity (95.2 mS cm-1) and high oxidative stability (99.9%). The Nafion-ZrNT composite membrane exhibited low vanadium ion permeability (3.2 × 10-9 cm2 min-1) and superior ion selectivity (2.95 × 107 S min cm-3). The VRB constructed with a Nafion-ZrNT composite membrane has lower self-discharge rate maintaining an open-circuit voltage of 1.3 V for 330 h relative to a pristine Nafion membrane (29 h). The discharge capacity of Nafion-ZrNT membrane (987 mAh) was 3.5-times higher than Nafion-117 membrane (280 mAh) after 100 charge-discharge cycles. These superior properties resulted in higher coulombic and voltage efficiencies with Nafion-ZrNT membranes compared to VRB with Nafion-117 membrane at a 40 mA cm-2 current density.

  13. Ethylenediamine-functionalized graphene oxide incorporated acid-base ion exchange membranes for vanadium redox flow battery

    International Nuclear Information System (INIS)

    Liu, Shuai; Li, Dan; Wang, Lihua; Yang, Haijun; Han, Xutong; Liu, Biqian

    2017-01-01

    Highlights: • Ethylenediamine functionalized graphene oxide. • Layered structure of functionalized graphene oxide block vanadium ions crossover. • Protonated N-containing groups suppress vanadium ions permeation. • Ion transport channels are narrowed by electrostatic interactions. • Vanadium crossover decreased due to enhanced Donnan effect and special structure. - Abstract: As a promising large-scale energy storage battery, vanadium redox flow battery (VRFB) is urgently needed to develop cost-effective membranes with excellent performance. Novel acid-base ion exchange membranes (IEMs) are fabricated based on sulfonated poly(ether ether ketone) (SPEEK) matrix and modified graphene oxide (GO) by solution blending. N-based functionalized graphene oxide (GO-NH 2 ) is fabricated by grafting ethylenediamine onto the edge of GO via a facile method. On one hand, the impermeable layered structures effectively block ion transport pathway to restrain vanadium ions crossover. On the other hand, acid-base pairs form between −SO 3 − groups and N-based groups on the edge of GO nanosheets, which not only suppress vanadium ions contamination but also provide a narrow pathway for proton migration. The structure is beneficial for achieving an intrinsic balance between conductivity and permeability. By altering amounts of GO-NH 2 , a sequence of acid-base IEMs are characterized in detail. The single cells assembled with acid-base IEMs show self-discharge time for 160 h, capacity retention 92% after 100 cycle, coulombic efficiency 97.2% and energy efficiency 89.5%. All data indicate that acid-base IEMs have promising prospects for VRFB applications.

  14. Optical switching and photoluminescence in erbium-implanted vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Herianto, E-mail: mail@heriantolim.com; Stavrias, Nikolas; Johnson, Brett C.; McCallum, Jeffrey C. [School of Physics, University of Melbourne, Parkville, Victoria 3010 (Australia); Marvel, Robert E.; Haglund, Richard F. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37240 (United States)

    2014-03-07

    Vanadium dioxide (VO{sub 2}) is under intensive consideration for optical switching due to its reversible phase transition, which features a drastic and rapid shift in infrared reflectivity. Classified as an insulator–to–metal transition, the phase transition in VO{sub 2} can be induced thermally, electrically, and optically. When induced optically, the transition can occur on sub-picosecond time scales. It is interesting to dope VO{sub 2} with erbium ions (Er{sup 3+}) and observe their combined properties. The first excited-state luminescence of Er{sup 3+} lies within the wavelength window of minimal transmission-loss in silicon and has been widely utilized for signal amplification and generation in silicon photonics. The incorporation of Er{sup 3+} into VO{sub 2} could therefore result in a novel photonic material capable of simultaneous optical switching and amplification. In this work, we investigate the optical switching and photoluminescence in Er-implanted VO{sub 2} thin films. Thermally driven optical switching is demonstrated in the Er-implanted VO{sub 2} by infrared reflectometry. Photoluminescence is observed in the thin films annealed at ∼800 °C or above. In addition, Raman spectroscopy and a statistical analysis of switching hysteresis are carried out to assess the effects of the ion implantation on the VO{sub 2} thin films. We conclude that Er-implanted VO{sub 2} can function as an optical switch and amplifier, but with reduced switching quality compared to pure VO{sub 2}.

  15. Electrochemical intercalation of lithium into polypyrrole/silver vanadium oxide composite used for lithium primary batteries

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong-Won; Popov, Branko N. [Center for Electrochemical Engineering, Department of Chemical Engineering, University of South Carolina, Columbia, SC 29208 (United States)

    2006-10-20

    Hybrid composites of polypyrrole (PPy) and silver vanadium oxide (SVO) used for lithium primary batteries were chemically synthesized by an oxidative polymerization of pyrrole monomer on the SVO surface in an acidic medium. The composite electrode exhibited higher discharge capacity and better rate capability as compared with the pristine SVO electrode. The improvement in electrochemical performance of the composite electrode was due to PPy which accommodates lithium ions and also enhances the SVO utilization. Chronoamperometric and ac-impedance measurements indicated that lithium intercalation proceeds under the mixed control by interfacial charge transfer and diffusion. The enhanced SVO utilization in the composite electrode results from a facilitated kinetics of interfacial charge transfer in the presence of PPy. (author)

  16. Electrochemical intercalation of lithium into polypyrrole/silver vanadium oxide composite used for lithium primary batteries

    Science.gov (United States)

    Lee, Jong-Won; Popov, Branko N.

    Hybrid composites of polypyrrole (PPy) and silver vanadium oxide (SVO) used for lithium primary batteries were chemically synthesized by an oxidative polymerization of pyrrole monomer on the SVO surface in an acidic medium. The composite electrode exhibited higher discharge capacity and better rate capability as compared with the pristine SVO electrode. The improvement in electrochemical performance of the composite electrode was due to PPy which accommodates lithium ions and also enhances the SVO utilization. Chronoamperometric and ac-impedance measurements indicated that lithium intercalation proceeds under the mixed control by interfacial charge transfer and diffusion. The enhanced SVO utilization in the composite electrode results from a facilitated kinetics of interfacial charge transfer in the presence of PPy.

  17. Self-assembly of a tetrahedral 58-nuclear barium vanadium oxide cluster.

    Science.gov (United States)

    Kastner, Katharina; Puscher, Bianka; Streb, Carsten

    2013-01-07

    We report the synthesis and characterization of a molecular barium vanadium oxide cluster featuring high nuclearity and high symmetry. The tetrameric, 2.3 nm cluster H(5)[Ba(10)(NMP)(14)(H(2)O)(8)[V(12)O(33)](4)Br] is based on a bromide-centred, octahedral barium scaffold which is capped by four previously unknown [V(12)O(33)](6-) clusters in a tetrahedral fashion. The compound represents the largest polyoxovanadate-based heterometallic cluster known to date. The cluster is formed in organic solution and it is suggested that the bulky N-methyl-2-pyrrolidone (NMP) solvent ligands allow the isolation of this giant molecule and prevent further condensation to a solid-state metal oxide. The cluster is fully characterized using single-crystal XRD, elemental analysis, ESI mass spectrometry and other spectroscopic techniques.

  18. Transformers: the changing phases of low-dimensional vanadium oxide bronzes.

    Science.gov (United States)

    Marley, Peter M; Horrocks, Gregory A; Pelcher, Kate E; Banerjee, Sarbajit

    2015-03-28

    In this feature article, we explore the electronic and structural phase transformations of ternary vanadium oxides with the composition MxV2O5 where M is an intercalated cation. The periodic arrays of intercalated cations ordered along quasi-1D tunnels or layered between 2D sheets of the V2O5 framework induce partial reduction of the framework vanadium atoms giving rise to charge ordering patterns that are specific to the metal M and stoichiometry x. This periodic charge ordering makes these materials remarkably versatile platforms for studying electron correlation and underpins the manifestation of phenomena such as colossal metal-insulator transitions, quantized charge corrals, and superconductivity. We describe current mechanistic understanding of these emergent phenomena with a particular emphasis on the benefits derived from scaling these materials to nanostructured dimensions wherein precise ordering of cations can be obtained and phase relationships can be derived that are entirely inaccessible in the bulk. In particular, structural transformations induced by intercalation are dramatically accelerated due to the shorter diffusion path lengths at nanometer-sized dimensions, which cause a dramatic reduction of kinetic barriers to phase transformations and facilitate interconversion between the different frameworks. We conclude by summarizing numerous technological applications that have become feasible due to recent advances in controlling the structural chemistry and both electronic and structural phase transitions in these versatile frameworks.

  19. Vanadium oxide nanowire-carbon nanotube binder-free flexible electrodes for supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Perera, Sanjaya D.; Patel, Bijal; Seitz, Oliver; Ferraris, John P.; Balkus, Kenneth J. Jr. [Department of Chemistry and the Alan G. MacDiarmid Nanotech Institute, 800 West Campbell Rd, University of Texas at Dallas, Richardson, TX 75080 (United States); Nijem, Nour; Roodenko, Katy; Chabal, Yves J. [Laboratory for Surface and Nanostructure Modification, Department of Material Science and Engineering, 800 West Campbell Rd, University of Texas Dallas, Richardson, TX 75080 (United States)

    2011-10-15

    Vanadium pentoxide (V{sub 2}O{sub 5}) layered nanostructures are known to have very stable crystal structures and high faradaic activity. The low electronic conductivity of V{sub 2}O{sub 5} greatly limits the application of vanadium oxide as electrode materials and requires combining with conducting materials using binders. It is well known that the organic binders can degrade the overall performance of electrode materials and need carefully controlled compositions. In this study, we develop a simple method for preparing freestanding carbon nanotube (CNT)-V{sub 2}O{sub 5} nanowire (VNW) composite paper electrodes without using binders. Coin cell type (CR2032) supercapacitors are assembled using the nanocomposite paper electrode as the anode and high surface area carbon fiber electrode (Spectracarb 2225) as the cathode. The supercapacitor with CNT-VNW composite paper electrode exhibits a power density of 5.26 kW Kg{sup -1} and an energy density of 46.3 Wh Kg{sup -1}. (Li)VNWs and CNT composite paper electrodes can be fabricated in similar manner and show improved overall performance with a power density of 8.32 kW Kg{sup -1} and an energy density of 65.9 Wh Kg{sup -1}. The power and energy density values suggest that such flexible hybrid nanocomposite paper electrodes may be useful for high performance electrochemical supercapacitors. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Application of vanadium incorporated phosphomolybdate supported on the modified kaolinin synthesis of diphenyl carbonate by oxidative carbonylation with phenol

    Directory of Open Access Journals (Sweden)

    Peng Meng

    2017-01-01

    Full Text Available Keggin-type molybdophosphoric acid, molybdophosphoric salt and vanadium incorporated molybdophosphoric salt supported on the modified kaolin (MK were investigated as redox co-catalysts for the oxidative carbonylation of phenol to diphenyl carbonate (DPC in the absence of solvent. The 20 wt.% of MnAMPV5 (one kind of vanadium incorporated molybdophosphoric salt loaded on MK showed the highest catalytic activity with the yield of 24.68% and a TON of 306, while the selectivity amounts to nearly 100% in all the carbonylation reactions. The catalysts were characterized by XRD, BET, XPS and H2-TPR. The reusability study showed that the catalysts were stable and active.

  1. Fundamentals of vanadium dioxide thin films as possible components of intelligent windows

    Directory of Open Access Journals (Sweden)

    Wu, Z. P.

    1999-03-01

    Full Text Available In this paper, the research on the vanadium dioxide thin film, which can be used as intelligent windows, is reviewed, including the basic properties of V2, energy band structure, model of electronic energy and the origin of metal-to-insulator transition (MIT. Finally, the problems existing in the research and the possibility of application for VO2, as an intelligent thermochromic window are briefly discussed.

    En este artículo se revisan las investigaciones realizadas en películas delgadas de dióxido de vanadio que pueden ser usadas en componentes de ventanas inteligentes, incluyendo las propiedades básicas del VO2, tales como su estructura de bandas, modelo energético de tipo electrónico y el origen del fenómeno de la transición: metal-aislador (MIT en la literatura inglesa que constituye la base de las aplicaciones de estas películas. Finalmente, los problemas que hay en la investigación actual de este tipo de películas, así como sus posibles aplicaciones en ventanas inteligentes de tipo termocrómico, se discuten brevemente.

  2. The ability of silicide coating to delay the catastrophic oxidation of vanadium under severe conditions

    Energy Technology Data Exchange (ETDEWEB)

    Chaia, N., E-mail: nabil.chaia@univ-lorraine.fr [Université de Lorraine, Institut Jean Lamour – UMR7198, Boulevard des Aiguillettes, BP70239, 54506 Vandoeuvre-lès-Nancy Cedex (France); Mathieu, S., E-mail: stephane.mathieu@univ-lorraine.fr [Université de Lorraine, Institut Jean Lamour – UMR7198, Boulevard des Aiguillettes, BP70239, 54506 Vandoeuvre-lès-Nancy Cedex (France); Rouillard, F., E-mail: fabien.rouillard@cea.fr [CEA, DEN, DPC, SCCME, Laboratoire d’Etude de la Corrosion Non Aqueuse, F-91191 Gif-sur-Yvette (France); Vilasi, M., E-mail: michel.vilasi@univ-lorraine.fr [Université de Lorraine, Institut Jean Lamour – UMR7198, Boulevard des Aiguillettes, BP70239, 54506 Vandoeuvre-lès-Nancy Cedex (France)

    2015-02-15

    Highlights: • Oxidation protection is due to the formation of a pure silica layer. • V–4Cr–4Ti with V{sub x}Si{sub y} silicide coating withstands 400 1-h cycles (1100 °C-T{sub amb}) in air. • Three-point flexure testing at 950 °C and 75 MPa does not induce coating breakdown. • No delamination between coating and substrate is observed in any test. - Abstract: V–4Cr–4Ti vanadium alloy is a potential cladding material for sodium-cooled fast-neutron reactors (SFRs). However, its affinity for oxygen and the subsequent embrittlement that oxygen induces causes a need for an oxygen diffusion barrier, which can be obtained by manufacturing a multi-layered silicide coating. The present work aims to evaluate the effects of thermal cycling (using a cyclic oxidation device) and tensile and compressive stresses (using the three-point flexure test) on the coated alloy system. Tests were performed in air up to 1100 °C, which is 200 °C higher than the accidental temperature for SFR applications. The results showed that the VSi{sub 2} coating was able to protect the vanadium substrate from oxidation for more than 400 1-h cycles between 1100 °C and room temperature. The severe bending applied to the coated alloy at 950 °C using a load of 75 MPa did not lead to specimen breakage. It can be suggested that the VSi{sub 2} coating has mechanical properties compatible with the V–4Cr–4Ti alloy for SFR applications.

  3. Chemical vapour deposition of vanadium oxide thermochromic thin films

    OpenAIRE

    Piccirillo, Clara

    2012-01-01

    Thermochromic materials change optical properties, such as transmittance or reflectance, with a variation in temperature. An ideal intelligent (smart) material will allow solar radiation in through a window in cold conditions, but reflect that radiation in warmer conditions. The variation in the properties is often associated with a phase change, which takes place at a definite temperature, and is normally reversible. Such materials are usually applied to window glass as thi...

  4. Inverted organic solar cells with solvothermal synthesized vanadium-doped TiO2 thin films as efficient electron transport layer

    Institute of Scientific and Technical Information of China (English)

    Mehdi Ahmadi; Sajjad Rashidi Dafeh; Samaneh Ghazanfarpour; Mohammad Khanzadeh

    2017-01-01

    We investigated the effects of using different thicknesses of pure and vanadium-doped thin films of TiO2 as the electron transport layer in the inverted configuration of organic photovoltaic cells based on poly (3-hexylthiophene) P3HT:[6-6] phenyl-(6) butyric acid methyl ester (PCBM).1% vanadium-doped TiO2 nanoparticles were synthesized via the solvothermal method.Crystalline structure,morphology,and optical properties of pure and vanadium-doped TiO2 thin films were studied by different techniques such as x-ray diffraction,scanning electron microscopy,transmittance electron microscopy,and UV-visible transmission spectrum.The doctor blade method which is compatible with roll-2-roll printing was used for deposition of pure and vanadium-doped TiO2 thin films with thicknesses of 30 nm and 60 nm.The final results revealed that the best thickness of TiO2 thin films for our fabricated cells was 30 nm.The cell with vanadium-doped TiO2 thin film showed slightly higher power conversion efficiency and great Jsc of 10.7 mA/cm2 compared with its pure counterpart.In the cells using 60 nm pure and vanadium-doped TiO2 layers,the cell using the doped layer showed much higher efficiency.It is remarkable that the extemal quantum efficiency of vanadium-doped TiO2 thin film was better in all wavelengths.

  5. Partial thermodynamic functions of hydrogen in complex hydrated vanadium(5) and tungsten(6) oxides

    International Nuclear Information System (INIS)

    Volkov, V.L.; Zakharova, G.S.

    2003-01-01

    The partial thermodynamic characteristics of hydrogen in the complex hydrated vanadium(5) and tungsten(6) oxides, obtained through the sol-gel method, of the general formula H 2 V 12-y W y O 31+δ ·nH 2 O (0 ≤ x ≤ 0.33) are determined through the emf method. The changes in these values (ΔG-bar(H 2 ), ΔH-bar(H 2 ) and ΔS-bar(H 2 )) in dependence on the compound composition are discussed. It is established that ΔG-bar(H 2 ) phases, amorphous to X-rays are determined by the ΔS-bar(H 2 ) value and crystalline ones by ΔH-bar(H 2 ). The scheme of the phase relationships of the H 2 O-H-WO 3 -V 2 O 5 system, whereto the given phases are related are presented [ru

  6. Highly Stable Aqueous Zinc-ion Storage Using Layered Calcium Vanadium Oxide Bronze Cathode

    KAUST Repository

    Xia, Chuan

    2018-02-12

    Cost-effective aqueous rechargeable batteries are attractive alternatives to non-aqueous cells for stationary grid energy storage. Among different aqueous cells, zinc-ion batteries (ZIBs), based on Zn2+ intercalation chemistry, stand out as they can employ high-capacity Zn metal as anode material. Herein, we report a layered calcium vanadium oxide bronze as cathode material for aqueous Zn batteries. For the storage of Zn2+ ions in aqueous electrolyte, we demonstrate that calcium based bronze structure can deliver a high capacity of 340 mAh g-1 at 0.2 C, good rate capability and very long cycling life (96% retention after 3000 cycles at 80 C). Further, we investigate the Zn2+ storage mechanism, and the corresponding electrochemical kinetics in this bronze cathode. Finally, we show that our Zn cell delivers an energy density of 267 Wh kg-1 at a power density of 53.4 W kg-1.

  7. Highly Stable Aqueous Zinc-ion Storage Using Layered Calcium Vanadium Oxide Bronze Cathode

    KAUST Repository

    Xia, Chuan; Guo, Jing; Li, Peng; Zhang, Xixiang; Alshareef, Husam N.

    2018-01-01

    Cost-effective aqueous rechargeable batteries are attractive alternatives to non-aqueous cells for stationary grid energy storage. Among different aqueous cells, zinc-ion batteries (ZIBs), based on Zn2+ intercalation chemistry, stand out as they can employ high-capacity Zn metal as anode material. Herein, we report a layered calcium vanadium oxide bronze as cathode material for aqueous Zn batteries. For the storage of Zn2+ ions in aqueous electrolyte, we demonstrate that calcium based bronze structure can deliver a high capacity of 340 mAh g-1 at 0.2 C, good rate capability and very long cycling life (96% retention after 3000 cycles at 80 C). Further, we investigate the Zn2+ storage mechanism, and the corresponding electrochemical kinetics in this bronze cathode. Finally, we show that our Zn cell delivers an energy density of 267 Wh kg-1 at a power density of 53.4 W kg-1.

  8. Influence of vanadium incorporation on the microstructure, mechanical and tribological properties of Nb–V–Si–N films deposited by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ju, Hongbo; Xu, Junhua, E-mail: jhxu@just.edu.cn

    2015-09-15

    Composite Nb–V–Si–N films with various V contents (3.7–13.2 at.%) were deposited by reactive magnetron sputtering and the effects of V content on the microstructure, mechanical and tribological properties of Nb–V–Si–N films were investigated. The results revealed that a three-phase structure, consisting of face-centered cubic (fcc) Nb–V–Si–N, hexagonal close-packed (hcp) Nb–V–Si–N and amorphous Si{sub 3}N{sub 4}, co-exists in the Nb–V–Si–N films and the cubic phase is dominant. The hardness and critical load (L{sub c}) of Nb–V–Si–N films initially increased gradually and reached a summit, then decreased with the increasing V content in the films and the maximum values were 35 GPa and 9.8 N, respectively, at 6.4 at.% V. The combination of V into Nb–Si–N film led to the fracture toughness linearly increasing from 1.11 MPa·m{sup 1/2} at 3.7 at.% V to 1.67 MPa·m{sup 1/2} at 13.2 at.% V. At room temperature (RT), the average friction coefficient decreased from 0.80 at 3.7 at.% V to 0.55 at 13.2 at.% V for the Nb–V–Si–N films. The wear rate of Nb–V–Si–N films initially decreased and then increased after reaching a minimum value of about 6.35 × 10{sup −} {sup 7} mm{sup 3}/N·mm at 6.4 at.% V. As the rise of testing temperature from 200 °C to 600 °C, the average friction coefficient of Nb–V–Si–N films decreased with the increase of the testing temperature regardless of V content. However, the wear rate gradually increased for all films. The average friction coefficient and wear rate at RT and elevated temperatures were mainly influenced by the vanadium oxides with weakly bonded lattice planes. - Highlight: • Fcc-Nb–V–Si–N, hcp-Nb–V–Si–N and amorphous Si{sub 3}N{sub 4} co-existed in the films. • The amount of Si{sub 3}N{sub 4} decreased with increasing V content in the films. • Hardness of Nb–V–Si–N film (6.4 at.%) reached a maximum value of 35 GPa. • Addition of V led to the

  9. Experimental investigation of new low-dimensional spin systems in vanadium oxides

    International Nuclear Information System (INIS)

    Kaul, E.E.

    2005-01-01

    In this dissertation we reported our experimental investigation of the magnetic properties of nine low-dimensional vanadium compounds. Two of these materials are completely new (Pb 2 V 5 O 12 and Pb 2 VO(PO 4 ) 2 ) and were found during our search for new low-dimensional vanadium oxides. Among the other seven vanadium compounds studied, three were physically investigated for the first time (Sr 2 VO(PO 4 ) 2 , BaZnVO(PO 4 ) 2 and SrZnVO(PO 4 ) 2 ). Two had hitherto only preliminary, and wrongly interpreted, susceptibility measurements reported in the literature (Sr 2 V 3 O 9 and Ba 2 V 3 O 9 ) while the remaining two (Li 2 VOSiO 4 and Li 2 VOGeO 4 ) were previously investigated in some detail but the interpretation of the data was controversial. We investigated the magnetic properties of these materials by means of magnetic susceptibility and specific heat (C p (T)) measurements (as well as single crystal ESR measurements in the case of Sr 2 V 3 O 9 ). We synthesized the samples necessary for our physical studies. That required a search of the optimal synthesis conditions for obtaining pure, high quality, polycrystalline samples. Single crystals of Sr 2 V 3 O 9 and Pb 2 VO(PO 4 ) 2 were also successfully grown. Pb 2 VO(PO 4 ) 2 , BaZnVO(PO 4 ) 2 , SrZnVO(PO 4 ) 2 , Li 2 VOSiO 4 and Li 2 VOGeO 4 were found to be experimental examples of frustrated square-lattice systems which are described by theJ 1 -J 2 model. We found that Li 2 VOSiO 4 and Li 2 VOGeO 4 posses a weakly frustrated antiferromagnetic square lattice while Pb 2 VO(PO 4 ) 2 , BaZnVO(PO 4 ) 2 and SrZnVO(PO 4 ) 2 form a more strongly frustrated ferromagnetic square lattice. Pb 2 V 5 O 12 is structurally and compositionally related to the two dimensional A 2+ V 4+ n O 2n+1 vanadates. Its structure consists of layers formed by edge- and corner-shared square VO 5 pyramids. The basic structural units are plaquettes consisting of six corner-shared pyramids pointing in the same direction, which form a spin

  10. Vanadium recovery process

    International Nuclear Information System (INIS)

    Pyrih, R.Z.; Rickard, R.S.

    1978-01-01

    A process for recovering vanadium values from carbonaceous type vanadium ores, and vanadium scrap, such as vanadium contaminated spent catalyst, is disclosed which comprises roasting the vanadium containing material in air at a temperature less than about 600 0 C to produce a material substantially devoid of organic matter, subjecting said roasted material to a further oxidizing roast in an oxygen atmosphere at a temperature of at least about 800 0 C for a period sufficient to convert substantially all of the vanadium to the soluble form, leaching the calcine with a suitable dilute mineral acid or water at a pH of neutral to about 2 to recover vanadium values, precipitating vanadium values as iron vanadate from the leach solution with a soluble iron compound at a pH from neutral to about 1, and recovering ferrovanadium from the iron vanadate by a reduction vacuum smelting operation. The conversion of vanadium in the ore to the soluble form by the oxidizing roast is accomplished without the addition of an alkaline salt during calcining

  11. Electrochemical investigation of thermically treated graphene oxides as electrode materials for vanadium redox flow battery

    International Nuclear Information System (INIS)

    Di Blasi, O.; Briguglio, N.; Busacca, C.; Ferraro, M.; Antonucci, V.; Di Blasi, A.

    2015-01-01

    Highlights: • Graphene oxide is synthesized at high temperatures in a reducing environment. • Treated graphene oxide-based electrodes are prepared by the wet impregnation method. • Electrochemical performance is evaluated as a function of the physico-chemical properties. - Abstract: Thermically treated graphene oxides (TT-GOs) are synthesized at different temperatures, 100 °C, 150 °C, 200 °C and 300 °C in a reducing environment (20% H 2 /He) and investigated as electrode materials for vanadium redox flow battery (VRFB) applications. The treated graphene oxide-based electrodes are prepared by the wet impregnation method using carbon felt (CF) as support. The main aim is to achieve a suitable distribution of the dispersed graphene oxides on the CF surface in order to investigate the electrocatalytic activity for the VO 2+ /VO 2 + and V 2+ /V 3+ redox reactions in the perspective of a feasible large area electrodes scale-up for battery configuration of practical interest. Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) are carried out in a three electrode half-cell to characterize the electrochemical properties of the TT-GO-based electrodes. Physico-chemical characterizations are carried out to corroborate the electrochemical results. The TT-GO sample treated at 100 °C (TT-GO-100) shows the highest electrocatalytic activity in terms of peak to peak separation (ΔE = 0.03 V) and current density intensity (∼0.24 A cm −2 at 30 mV/s) both toward the VO 2+ /VO 2 + and V 2+ /V 3+ redox reactions. This result is correlated to the presence of hydroxyl (−OH) and carboxyl (−COOH) species that act as active sites. A valid candidate is individuated as effective anode and cathode electrode in the perspective of electrodes scale-up for battery configuration of practical interest

  12. The electronic structure and metal-insulator transitions in vanadium oxides

    International Nuclear Information System (INIS)

    Mossanek, Rodrigo Jose Ochekoski

    2010-01-01

    The electronic structure and metal-insulator transitions in vanadium oxides (SrVO_3, CaVO_3, LaVO_3 and YVO_3) are studied here. The purpose is to show a new interpretation to the spectra which is coherent with the changes across the metal-insulator transition. The main experimental techniques are the X-ray photoemission (PES) and X-ray absorption (XAS) spectroscopies. The spectra are interpreted with cluster model, band structure and atomic multiplet calculations. The presence of charge-transfer satellites in the core-level PES spectra showed that these vanadium oxides cannot be classified in the Mott-Hubbard regime. Further, the valence band and core-level spectra presented a similar behavior across the metal insulator transition. In fact, the structures in the spectra and their changes are determined by the different screening channels present in the metallic or insulating phases. The calculated spectral weight showed that the coherent fluctuations dominate the spectra at the Fermi level and give the metallic character to the SrVO_3 and CaVO_3 compounds. The vanishing of this charge fluctuation and the replacement by the Mott-Hubbard screening in the LaVO_3 and YVO_3 systems is ultimately responsible for the opening of a band gap and the insulating character. Further, the correlation effects are, indeed, important to the occupied electronic structure (coherent and incoherent peaks). On the other hand, the unoccupied electronic structure is dominated by exchange and crystal field effects (t2g and eg sub-bands of majority and minority spins). The optical conductivity spectrum was obtained by convoluting the removal and addition states. It showed that the oxygen states, as well as the crystal field and exchange effects are necessary to correctly compare and interpret the experimental results. Further, a correlation at the charge-transfer region of the core-level and valence band optical spectra was observed, which could be extended to other transition metal oxides

  13. Vanadium oxides supported on hydrotalcite-type precursors: the effect of acid-base properties on the oxidation of isopropanol

    Directory of Open Access Journals (Sweden)

    D. M. Meira

    2006-09-01

    Full Text Available Vanadium oxide supported on hydrotalcite-type precursors was studied in the oxidation of isopropanol. Hydrotalcites with different y = Mg/Al ratios were synthesized by the method of coprecipitation nitrates of Mg and Al cations with K2CO3 as precipitant. The decomposition of these hydrotalcite precursors at 450°C yielded homogeneous MgyAlOx mixed oxides that contain the Al+3 cations totally incorporated into the MgO framework. The materials were characterized by chemical analysis, BET superficial area, X-ray diffraction, temperature-programmed reduction (TPR and the reaction of isopropanol, a probe molecule used to evaluate the acid-base properties. The results of TPR showed that the reducibility of V+5 decreased with the increase in magnesium loading in catalysts. The X-ray diffraction patterns of Al-rich hydrotalcite precursors showed the presence of crystalline phases of brucite and gibbsite. It was shown that chemical composition, texture, acid-base properties of the active sites and also Mg/Al ratio strongly affect the formation of the products in the oxidation of isopropanol. The Al-rich catalysts were much more active than the Mg-rich ones, converting isopropanol mainly to propylene.

  14. Vanadium oxides supported on hydrotalcite-type precursors: the effect of acid base properties on the oxidation of isopropanol

    Energy Technology Data Exchange (ETDEWEB)

    Meira, D.M.; Cortez, G.G. [Faculdade de Engenharia Quimica de Lorena, Lorena, SP (Brazil). Dept. de Engenharia Quimica. Lab. de Catalise II]. E-mail: cortez@dequi.faenquil.br; Monteiro, W.R.; Rodrigues, J.A.J. [Instituto Nacional de Pesquisas Espaciais (INPE), Sao Jose dos Campos, SP (Brazil). Lab. Associado de Combustao e Propulsao]. E-mail: jajr@lcp.inpe.br

    2006-07-15

    Vanadium oxide supported on hydrotalcite-type precursors was studied in the oxidation of isopropanol. Hydrotalcites with different y = Mg/Al ratios were synthesized by the method of coprecipitation nitrates of Mg and Al cations with K{sub 2}CO{sub 3} as precipitant. The decomposition of these hydrotalcite precursors at 450 deg C yielded homogeneous MgyAlOx mixed oxides that contain the Al{sup +3} cations totally incorporated into the MgO framework. The materials were characterized by chemical analysis, BET superficial area, X-ray diffraction, temperature-programmed reduction (TPR) and the reaction of isopropanol, a probe molecule used to evaluate the acid-base properties. The results of TPR showed that the reducibility of V{sup +5} decreased with the increase in magnesium loading in catalysts. The X-ray diffraction patterns of Al-rich hydrotalcite precursors showed the presence of crystalline phases of brucite and gibbsite. It was shown that chemical composition, texture, acid-base properties of the active sites and also Mg/Al ratio strongly affect the formation of the products in the oxidation of isopropanol. The Al-rich catalysts were much more active than the Mg-rich ones, converting isopropanol mainly to propylene. (author)

  15. Three-dimensional Nitrogen-Doped Reduced Graphene Oxide/Carbon Nanotube Composite Catalysts for Vanadium Flow Batteries

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Shaofang [School of Mechanical and Materials Engineering, Washington State University, WA, 99164 USA.; Zhu, Chengzhou [School of Mechanical and Materials Engineering, Washington State University, WA, 99164 USA.; Song, Junhua [School of Mechanical and Materials Engineering, Washington State University, WA, 99164 USA.; Engelhard, Mark H. [Environmental Molecular Science Laboratory, Pacific Northwest National Laboratory, Richland, WA 99354 USA.; Du, Dan [School of Mechanical and Materials Engineering, Washington State University, WA, 99164 USA.; Lin, Yuehe [School of Mechanical and Materials Engineering, Washington State University, WA, 99164 USA.; Environmental Molecular Science Laboratory, Pacific Northwest National Laboratory, Richland, WA 99354 USA.

    2017-02-22

    The development of vanadium redox flow battery is limited by the sluggish kinetics of the reaction, especially the cathodic VO2+/VO2+ redox couples. Therefore, it is vital to develop new electrocatalyst with enhanced activity to improve the battery performance. Herein, we first synthesized the hydrogel precursor by a facile hydrothermal method. After the following carbonization, nitrogen-doped reduced graphene oxide/carbon nanotube composite was obtained. By virtue of the large surface area and good conductivey, which are ensured by the unique hybrid structure, as well as the proper nitrogen doping, the as-prepared composite presents enhanced catalytic performance toward the VO2+/VO2+ redox reaction. We also demonstrated the composite with carbon nanotube loading of 2 mg/mL exhibits the highest activity and remarkable stability in aqueous solution due to the strong synergy between reduced graphene oxide and carbon nanotubes, indicating that this composite might show promising applications in vanadium redox flow battery.

  16. Programmable diode/resistor-like behavior of nanostructured vanadium pentoxide xerogel thin film.

    Science.gov (United States)

    Wan, Zhenni; Darling, Robert B; Anantram, M P

    2015-11-11

    Electrical properties of a Cr/V2O5/Cr structure are investigated and switching of the device due to electrochemical reactions is observed at low bias (resistor (reverse sweep first). The switching is irreversible and persistent, lasting for more than one month. By performing environmental tests, we prove that water molecules in the atmosphere and intercalated in the xerogel film are involved in the electrochemical reactions. It is proposed that an interfacial layer with reduced oxidation state forms at the Cr/V2O5 interface, and creates a higher Schottky barrier due to rise of electron affinity. Different interfacial layer thicknesses in forward and reverse first sweeps are responsible for different I-V characteristics in subsequent sweeps. The results suggest future applications of these V2O5 thin films in low-power read-only memory devices and diode-resistor networks.

  17. Highly Efficient Gas-Phase Oxidation of Renewable Furfural to Maleic Anhydride over Plate Vanadium Phosphorus Oxide Catalyst.

    Science.gov (United States)

    Li, Xiukai; Ko, Jogie; Zhang, Yugen

    2018-02-09

    Maleic anhydride (MAnh) and its acids are critical intermediates in chemical industry. The synthesis of maleic anhydride from renewable furfural is one of the most sought after processes in the field of sustainable chemistry. In this study, a plate vanadium phosphorus oxide (VPO) catalyst synthesized by a hydrothermal method with glucose as a green reducing agent catalyzes furfural oxidation to MAnh in the gas phase. The plate catalyst-denoted as VPO HT -has a preferentially exposed (200) crystal plane and exhibited dramatically enhanced activity, selectivity and stability as compared to conventional VPO catalysts and other state-of-the-art catalytic systems. At 360 °C reaction temperature with air as an oxidant, about 90 % yield of MAnh was obtained at 10 vol % of furfural in the feed, a furfural concentration value that is much higher than those (<2 vol %) reported for other catalytic systems. The catalyst showed good long-term stability and there was no decrease in activity or selectivity for MAnh during the time-on-stream of 25 h. The high efficiency and catalyst stability indicate the great potential of this system for the synthesis of maleic anhydride from renewable furfural. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Effects of the d-donor level of vanadium on the properties of Zn{sub 1−x}V{sub x}O films

    Energy Technology Data Exchange (ETDEWEB)

    García-Hemme, E., E-mail: eric.garcia@ucm.es [Dpto. de Física Aplicada III (Electricidad y Electrónica), Univ. Complutense de Madrid, Madrid 28040 (Spain); CEI Campus Moncloa, UCM-UPM, Madrid 28040 (Spain); Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Yu, K. M. [Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Department of Physics and Materials Science, City University of Hong Kong, Kowloon (Hong Kong); Wahnon, P. [CEI Campus Moncloa, UCM-UPM, Madrid 28040 (Spain); Instituto de Energía Solar and Depto TFB, E.T.S.I. Telecomunicación, Univ. Politécnica de Madrid, Ciudad Universitaria, Madrid 28040 (Spain); González-Díaz, G. [Dpto. de Física Aplicada III (Electricidad y Electrónica), Univ. Complutense de Madrid, Madrid 28040 (Spain); CEI Campus Moncloa, UCM-UPM, Madrid 28040 (Spain); Walukiewicz, W. [Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)

    2015-05-04

    We report the effect of d-levels of vanadium atoms on the electronic band structure of ZnO. Polycrystalline layers of Zn{sub 1−x}V{sub x}O with 0 ≤ x ≤ 0.08 were synthesized using magnetron sputtering technique. Electrical measurements show that electron concentration increases with vanadium up to x = 0.04 and then decreases and films become insulating for x > 0.06. Optical characterization reveals that the absorption edge shifts to higher energy, while the photoluminescence (PL) peak shows a shift to lower energy with increasing vanadium content. This unusual optical behavior can be explained by an anticrossing interaction between the vanadium d-levels and the conduction band (CB) of ZnO. The interaction results in an upward shift of unoccupied CB (E{sub +}) and the downward shift of the fully occupied E{sub −} band derived from the vanadium d-levels. The composition dependence of optical absorption edge (E{sub +}) and PL peak (E{sub −}) can be fitted using the Band Anticrossing model with the vanadium d-level located at 0.13 eV below CB of ZnO and a coupling constant of 0.65 eV.

  19. Oxidative Stress as a Mechanism Involved in Kidney Damage After Subchronic Exposure to Vanadium Inhalation and Oral Sweetened Beverages in a Mouse Model.

    Science.gov (United States)

    Espinosa-Zurutuza, Maribel; González-Villalva, Adriana; Albarrán-Alonso, Juan Carlos; Colín-Barenque, Laura; Bizarro-Nevares, Patricia; Rojas-Lemus, Marcela; López-Valdéz, Nelly; Fortoul, Teresa I

    Kidney diseases have notably increased in the last few years. This is partially explained by the increase in metabolic syndrome, diabetes, and systemic blood hypertension. However, there is a segment of the population that has neither of the previous risk factors, yet suffers kidney damage. Exposure to atmospheric pollutants has been suggested as a possible risk factor. Air-suspended particles carry on their surface a variety of fuel combustion-related residues such as metals, and vanadium is one of these. Vanadium might produce oxidative stress resulting in the damage of some organs such as the kidney. Additionally, in countries like Mexico, the ingestion of sweetened beverages is a major issue; whether these beverages alone are responsible for direct kidney damage or whether their ingestion promotes the progression of an existing renal damage generates controversy. In this study, we report the combined effect of vanadium inhalation and sweetened beverages ingestion in a mouse model. Forty CD-1 male mice were distributed in 4 groups: control, vanadium inhalation, 30% sucrose in drinking water, and vanadium inhalation plus sucrose 30% in drinking water. Our results support that vanadium inhalation and the ingestion of 30% sucrose induce functional and histological kidney damage and an increase in oxidative stress biomarkers, which were higher in the combined effect of vanadium plus 30% sucrose. The results also support that the ingestion of 30% sucrose alone without hyperglycemia also produces kidney damage.

  20. Experimental and theoretical study of the reactions between neutral vanadium oxide clusters and ethane, ethylene, and acetylene.

    Science.gov (United States)

    Dong, Feng; Heinbuch, Scott; Xie, Yan; Rocca, Jorge J; Bernstein, Elliot R; Wang, Zhe-Chen; Deng, Ke; He, Sheng-Gui

    2008-02-13

    Reactions of neutral vanadium oxide clusters with small hydrocarbons, namely C2H6, C2H4, and C2H2, are investigated by experiment and density functional theory (DFT) calculations. Single photon ionization through extreme ultraviolet (EUV, 46.9 nm, 26.5 eV) and vacuum ultraviolet (VUV, 118 nm, 10.5 eV) lasers is used to detect neutral cluster distributions and reaction products. The most stable vanadium oxide clusters VO2, V2O5, V3O7, V4O10, etc. tend to associate with C2H4 generating products V(m)O(n)C2H4. Oxygen-rich clusters VO3(V2O5)(n=0,1,2...), (e.g., VO3, V3O8, and V5O13) react with C2H4 molecules to cause a cleavage of the C=C bond of C2H4 to produce (V2O5)(n)VO2CH2 clusters. For the reactions of vanadium oxide clusters (V(m)O(n)) with C2H2 molecules, V(m)O(n)C2H2 are assigned as the major products of the association reactions. Additionally, a dehydration reaction for VO3 + C2H2 to produce VO2C2 is also identified. C2H6 molecules are quite stable toward reaction with neutral vanadium oxide clusters. Density functional theory calculations are employed to investigate association reactions for V2O5 + C2H(x). The observed relative reactivity of C2 hydrocarbons toward neutral vanadium oxide clusters is well interpreted by using the DFT calculated binding energies. DFT calculations of the pathways for VO3+C2H4 and VO3+C2H2 reaction systems indicate that the reactions VO3+C2H4 --> VO2CH2 + H2CO and VO3+C2H2 --> VO2C2 + H2O are thermodynamically favorable and overall barrierless at room temperature, in good agreement with the experimental observations.

  1. Trace vanadium analysis by catalytic adsorptive stripping voltammetry using mercury-coated micro-wire and polystyrene-coated bismuth film electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Dansby-Sparks, Royce; Chambers, James Q. [Department of Chemistry, University of Tennessee, Knoxville, TN 37996-1600 (United States); Xue Ziling, E-mail: xue@ion.chem.utk.edu [Department of Chemistry, University of Tennessee, Knoxville, TN 37996-1600 (United States)

    2009-06-08

    An electrochemical technique has been developed for ultra-trace (ng L{sup -1}) vanadium (V) measurement. Catalytic adsorptive stripping voltammetry for V analysis was developed at mercury-coated gold micro-wire electrodes (MWEs, 100 {mu}m) in the presence of gallic acid (GA) and bromate ion. A potential of -0.275 V (vs Ag/AgCl) was used to accumulate the complex in acetate buffer (pH 5.0) at the electrode surface followed by a differential pulse voltammetric scan. Parameters affecting the electrochemical response, including pH, concentration of GA and bromate, deposition potential and time have been optimized. Linear response was obtained in the 0-1000 ng L{sup -1} range (2 min deposition), with a detection limit of 0.88 ng L{sup -1}. The method was validated by comparison of results for an unknown solution of V by atomic absorption measurement. The protocol was evaluated in a real sample by measuring the amount of V in river water samples. Thick bismuth film electrodes with protective polystyrene films have also been made and evaluated as a mercury free alternative. However, ng L{sup -1} level detection was only attainable with extended (10 min) deposition times. The proposed use of MWEs for the detection of V is sensitive enough for future use to test V concentration in biological fluids treated by the advanced oxidation process (AOP).

  2. Electrochemical performance of polypyrrole/silver vanadium oxide composite cathodes in lithium primary batteries

    Science.gov (United States)

    Anguchamy, Yogesh K.; Lee, Jong-Won; Popov, Branko N.

    Polypyrrole (PPy)/silver vanadium oxide (SVO) composite cathode materials were synthesized by polymerizing pyrrole onto the surface of pure SVO particles. Electrochemical characterization was carried out by performing galvanostatic discharge, pulse discharge and ac-impedance experiments. The composite electrode exhibited better performance than pristine SVO in all the experiments. The composite electrodes yielded a higher discharge capacity and a better pulse discharge capability when compared to the pristine SVO electrode. The pulse discharge and ac-impedance studies indicated that PPy forms an effective conductive network on the SVO surface and thereby reduces the particle-to-particle contact resistance and facilitates the interfacial charge transfer kinetics. To determine the thermal stability of the composite cathode, galvanostatic discharge and ac-impedance experiments were performed at different temperatures. The capacity increased with temperature due to enhanced charge transfer kinetics and low mass transfer limitations. The peak capacity was obtained at 60 °C, after which the performance degraded with any further increase in temperature.

  3. Electrochemical performance of polypyrrole/silver vanadium oxide composite cathodes in lithium primary batteries

    Energy Technology Data Exchange (ETDEWEB)

    Anguchamy, Yogesh K.; Lee, Jong-Won; Popov, Branko N. [Center for Electrochemical Engineering, Department of Chemical Engineering, University of South Carolina, Columbia, SC 29208 (United States)

    2008-09-15

    Polypyrrole (PPy)/silver vanadium oxide (SVO) composite cathode materials were synthesized by polymerizing pyrrole onto the surface of pure SVO particles. Electrochemical characterization was carried out by performing galvanostatic discharge, pulse discharge and ac-impedance experiments. The composite electrode exhibited better performance than pristine SVO in all the experiments. The composite electrodes yielded a higher discharge capacity and a better pulse discharge capability when compared to the pristine SVO electrode. The pulse discharge and ac-impedance studies indicated that PPy forms an effective conductive network on the SVO surface and thereby reduces the particle-to-particle contact resistance and facilitates the interfacial charge transfer kinetics. To determine the thermal stability of the composite cathode, galvanostatic discharge and ac-impedance experiments were performed at different temperatures. The capacity increased with temperature due to enhanced charge transfer kinetics and low mass transfer limitations. The peak capacity was obtained at 60 C, after which the performance degraded with any further increase in temperature. (author)

  4. Influence of vanadium doping on the electrochemical performance of nickel oxide in supercapacitors.

    Science.gov (United States)

    Park, Hae Woong; Na, Byung-Ki; Cho, Byung Won; Park, Sun-Min; Roh, Kwang Chul

    2013-10-28

    In this study, V-doped NiO materials were prepared by simple coprecipitation and thermal decomposition, and the effect of the vanadium content on the morphology, structural properties, electrochemical behavior, and cycling stability of NiO upon oxidation and reduction was analyzed for supercapacitor applications. The results show an improvement in the capacitive characteristics of the V-doped NiO, including increases in the specific capacitance after the addition of just 1.0, 2.0, and 4.0 at% V. All VxNi1-xO electrodes (x = 0.01, 0.02, 0.04) exhibited higher specific capacitances of 371.2, 365.7, and 386.2 F g(-1) than that of pure NiO (303.2 F g(-1)) at a current density of 2 A g(-1) after 500 cycles, respectively. The V0.01Ni0.99O electrode showed good capacitance retention of 73.5% at a current density of 2 A g(-1) for more than 500 cycles in a cycling test. Importantly, the rate capability of the V0.01Ni0.99O electrode was maintained at about 84.7% as discharge current density was increased from 0.5 A g(-1) to 4 A g(-1).

  5. A novel vanadium oxide deposit for the cathode of asymmetric lithium-ion supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jing-Mei; Hu, Chi-Chang [Department of Chemical Engineering, National Tsing Hua University, Hsin-Chu (China); Chang, Kuo-Hsin [Department of Chemical Engineering, National Chung Cheng University, Chia-Yi (China)

    2010-12-15

    Hydrous vanadium oxide (denoted as VO{sub x}.yH{sub 2}O) deposited at 0.4 V shows promising capacitive behavior in aqueous media containing concentrated Li ions. VO{sub x}.yH{sub 2}O annealed in air at 300 C for 1 h shows highly reversible Li-ion intercalation/de-intercalation behavior with specific capacitance reaching ca. 737 and 606 F g{sup -} {sup 1} at 25 and 500 mV s{sup -1} in 12 M LiCl between -0.2 and 0.8 V. In 14 M LiCl, retention of specific capacitance is about 95% when the scan rate is increased from 25 to 500 mV s{sup -} {sup 1}. This work is the first report showing the ultrahigh rate of Li-ion intercalation/de-intercalation in VO{sub x}.yH{sub 2}O. A so-called Li-ion supercapacitor of the asymmetric type consisting of a VO{sub x}.yH{sub 2}O cathode and a WO{sub 3}{sup .}zH{sub 2}O anode is proposed here. (author)

  6. The mechanism of cysteine detection in biological media by means of vanadium oxide nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Bezerra, A. G. [Universidade Tecnologica Federal do Parana, Departamento Academico de Fisica (Brazil); Barison, A. [Universidade Federal do Parana, Departamento de Quimica (Brazil); Oliveira, V. S. [Universidade Federal do Parana, Departamento de Fisica (Brazil); Foti, L.; Krieger, M. A. [Fundacao Oswaldo Cruz, Instituto de Biologia Molecular do Parana (Brazil); Dhalia, R.; Viana, I. F. T. [Fundacao Oswaldo Cruz, Centro de Pesquisas Aggeu Magalhaes (Brazil); Schreiner, W. H., E-mail: wido@fisica.ufpr.br [Universidade Federal do Parana, Departamento de Fisica (Brazil)

    2012-09-15

    We report on the interaction of vanadate nanoparticles, produced using the laser ablation in liquids synthesis, with cysteine in biological molecules. Cysteine is a very important amino acid present in most proteins, but also because cysteine and the tripeptide glutathione are the main antioxidant molecules in our body system. Detailed UV-Vis absorption spectra and dynamic light scattering measurements were done to investigate the detection of cysteine in large biological molecules. The intervalence band of the optical absorption spectra shows capability for quantitative cysteine sensing in the {mu}M range in biological macromolecules. Tests included cytoplasmic repetitive antigen and flagellar repetitive antigen proteins of the Trypanosoma cruzi protozoa, as well as the capsid p24 proteins from Human Immunodeficiency Virus type 1 and type 2. Detailed NMR measurements for hydrogen, carbon, and vanadium nuclei show that cysteine in contact with the vanadate looses hydrogen of the sulphydryl side chain, while the vanadate is reduced. The subsequent detachment of two deprotonated molecules to form cystine and the slow return to the vanadate complete the oxidation-reduction cycle. Therefore, the vanadate acts as a charge exchanging catalyst on cysteine to form cystine. The NMR results also indicate that the nanoparticles are not formed by the common orthorhombic V{sub 2}O{sub 5} form.

  7. Graphene/vanadium oxide nanotubes composite as electrode material for electrochemical capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Meimei [College of Chemistry, Xiangtan University, Xiangtan 411005 (China); College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang 414006 (China); Ge, Chongyong [College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082 (China); College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang 414006 (China); Hou, Zhaohui, E-mail: zhqh96@163.com [College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang 414006 (China); Cao, Jianguo [College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082 (China); College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang 414006 (China); He, Binhong [College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang 414006 (China); Zeng, Fanyan [College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082 (China); College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang 414006 (China); Kuang, Yafei, E-mail: yafeik@163.com [College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082 (China)

    2013-07-15

    Graphene/vanadium oxide nanotubes (VOx-NTs) composite was successfully synthesized through the hydrothermal process in which acetone as solvent and 1-hexadecylamine (HDA) as structure-directing template were used. Morphology, structure and composition of the as-obtained composite were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, nitrogen isothermal adsorption/desorption and thermo gravimetric analysis (TGA). The composite with the VOx-NTs amount of 69.0 wt% can deliver a specific capacitance of 210 F/g at a current density of 1 A/g in 1 M Na{sub 2}SO{sub 4} aqueous solution, which is nearly twice as that of pristine graphene (128 F/g) or VOx-NTs (127 F/g), and exhibit a good performance rate. Compared with pure VOx-NTs, the cycle stability of the composite was also greatly improved due to the enhanced conductivity of the electrode and the structure buffer role of graphene.

  8. Highly stable aqueous zinc-ion storage using a layered calcium vanadium oxide bronze cathode

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Chuan; Guo, Jing; Li, Peng; Zhang, Xixiang; Alshareef, Husam N. [Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal (Saudi Arabia)

    2018-04-03

    Cost-effective aqueous rechargeable batteries are attractive alternatives to non-aqueous cells for stationary grid energy storage. Among different aqueous cells, zinc-ion batteries (ZIBs), based on Zn{sup 2+} intercalation chemistry, stand out as they can employ high-capacity Zn metal as the anode material. Herein, we report a layered calcium vanadium oxide bronze as the cathode material for aqueous Zn batteries. For the storage of the Zn{sup 2+} ions in the aqueous electrolyte, we demonstrate that the calcium-based bronze structure can deliver a high capacity of 340 mA h g{sup -1} at 0.2 C, good rate capability, and very long cycling life (96 % retention after 3000 cycles at 80 C). Further, we investigate the Zn{sup 2+} storage mechanism, and the corresponding electrochemical kinetics in this bronze cathode. Finally, we show that our Zn cell delivers an energy density of 267 W h kg{sup -1} at a power density of 53.4 W kg{sup -1}. (copyright 2018 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Graphene/vanadium oxide nanotubes composite as electrode material for electrochemical capacitors

    International Nuclear Information System (INIS)

    Fu, Meimei; Ge, Chongyong; Hou, Zhaohui; Cao, Jianguo; He, Binhong; Zeng, Fanyan; Kuang, Yafei

    2013-01-01

    Graphene/vanadium oxide nanotubes (VOx-NTs) composite was successfully synthesized through the hydrothermal process in which acetone as solvent and 1-hexadecylamine (HDA) as structure-directing template were used. Morphology, structure and composition of the as-obtained composite were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, nitrogen isothermal adsorption/desorption and thermo gravimetric analysis (TGA). The composite with the VOx-NTs amount of 69.0 wt% can deliver a specific capacitance of 210 F/g at a current density of 1 A/g in 1 M Na 2 SO 4 aqueous solution, which is nearly twice as that of pristine graphene (128 F/g) or VOx-NTs (127 F/g), and exhibit a good performance rate. Compared with pure VOx-NTs, the cycle stability of the composite was also greatly improved due to the enhanced conductivity of the electrode and the structure buffer role of graphene

  10. Evaluation of feasibility of tungsten/oxide dispersion strengthened steel bonding with vanadium insert

    International Nuclear Information System (INIS)

    Noto, Hiroyuki; Kimura, Akihiko; Kurishita, Hiroaki; Matsuo, Satoru; Nogami, Shuhei

    2013-01-01

    A diffusion bonding (DB) technique to reduce thermal expansion coefficient mismatch between tungsten (W) and oxide dispersion strengthened ferritic steel (ODS-FS) was developed by applying a vanadium (V) alloy as an insert material. In order to suppress σ phase precipitation at the interface, DB of ODS-FS and V-4Cr-4Ti was carried out by introducing a Ti insert as a diffusion barrier between V-4Cr-4Ti and ODS-FS, and examined feasibility of W/V/Ti/ODS-FS joint for application to fusion reactor components by comparing the three-point bending strength and microstructure between the joints with and without a Ti diffusion barrier layer. It is shown that the fracture strength of the joint without a Ti insert was decreased by 25% after aging at 700°C for 100 h, but that with a Ti insert shows no change after the aging treatment up to 1000 h. The result indicates that the introduction of a Ti insert leads to the prevention of the formation of σ phase during aging and resultant control of the degradation of the bonding strength. (author)

  11. Trimetallic oxide nanocomposites of transition metals titanium and vanadium by sol-gel technique: synthesis, characterization and electronic properties

    Science.gov (United States)

    Kumar, Amit; Mishra, Neeraj Kumar; Sachan, Komal; Ali, Md Asif; Soaham Gupta, Sachchidanand; Singh, Rajeev

    2018-04-01

    Novel titanium and vanadium based trimetallic oxide nanocomposites (TMONCs) have been synthesized using metal salts of titanium-vanadium along with three others metals viz. tin, aluminium and zinc as precursors by the sol-gel method. Aqueous ammonia and hydrazine hydrate were used as the reducing agents. The preparations of nanocomposites were monitored by observing the visual changes during each step of synthesis. The synthesized TMONCs were characterized using UV–vis, SEM, EDX, TEM and DLS. Band gap of the synthesized TMONCs ranges from 3–4.5 eV determined using tauc plot. FTIR study revealed the molecular stretching and bending peaks of corresponding M–O/M–O–M bonds thus confirming their formation. Molecular composition and particle size were determined using EDX and DLS respectively. Molecular shape, size and surface morphology have been examined by SEM and TEM.

  12. Roll-to-Roll Processing of Inverted Polymer Solar Cells using Hydrated Vanadium(V)Oxide as a PEDOT:PSS Replacement.

    Science.gov (United States)

    Espinosa, Nieves; Dam, Henrik Friis; Tanenbaum, David M; Andreasen, Jens W; Jørgensen, Mikkel; Krebs, Frederik C

    2011-01-11

    The use of hydrated vanadium(V)oxide as a replacement of the commonly employed hole transporting material PEDOT:PSS was explored in this work. Polymer solar cells were prepared by spin coating on glass. Polymer solar cells and modules comprising 16 serially connected cells were prepared using full roll-to-roll (R2R) processing of all layers. The devices were prepared on flexible polyethyleneterphthalate (PET) and had the structure PET/ITO/ZnO/P3HT:PCBM/V₂O₅·(H₂O) n /Ag. The ITO and silver electrodes were processed and patterned by use of screen printing. The zinc oxide, P3HT:PCBM and vanadium(V)oxide layers were processed by slot-die coating. The hydrated vanadium(V)oxide layer was slot-die coated using an isopropanol solution of vanadyl-triisopropoxide (VTIP). Coating experiments were carried out to establish the critical thickness of the hydrated vanadium(V)oxide layer by varying the concentration of the VTIP precursor over two orders of magnitude. Hydrated vanadium(V)oxide layers were characterized by profilometry, scanning electron microscopy, energy dispersive X-ray spectroscopy, and grazing incidence wide angle X-ray scattering. The power conversion efficiency (PCE) for completed modules was up to 0.18%, in contrast to single cells where efficiencies of 0.4% were achieved. Stability tests under indoor and outdoor conditions were accomplished over three weeks on a solar tracker.

  13. Partial oxidation of n- and i-pentane over promoted vanadium-phosphorus oxide catalysts

    Energy Technology Data Exchange (ETDEWEB)

    Zazhigalov, V.A.; Mikhajluk, B.D.; Komashko, G.A. [AN Ukrainskoj SSR, Kiev (Ukraine). Inst. Fizicheskoj Khimii

    1998-12-31

    It is known, that the cost of raw materials for catalytic oxidation processes is about 60% of the product price. Cheap initial compounds to produce variety of products and to replace olefins and aromatic hydrocarbons are paraffins. That is why catalytic systems which could be possibly rather efficient in selective oxidation of paraffin hydrocarbons are under very close investigation now. One of such processes in n-pentane oxidation. The obtained results on n-pentane oxidation over VPO catalysts were quite encouraging in respect of possible reach high selectivity and yield of phthalic anhydride. However, in our work it was shown that the main product of n-pentane oxidation in the presence of VPO catalytic system as well as VPMeO was maleic anhydride. Some later our results were confirmed in, where to grow the selectivity towards phthalic anhydride the Co-additive was introduced. On the basis of the proposal made before on the mechanism of paraffins conversion over the vanadyl pyrophosphate surface with their activation at the first and fourth carbon atoms, we assumed possible methylmaleic (citraconic) anhydride forming at n- and i-pentane oxidation. This assumption has been recently supported by both our and other researchers` experimental results. In it was also hypothized possible mechanistic features for phthalic anhydride forming from n-pentane. The present work deals with the results of n- and i-pentane oxidation over VPO catalysts promoted with Bi, Cs, Te, Zr. (orig.)

  14. Structure-property relationships in NOx sensor materials composed of arrays of vanadium oxide nanoclusters

    Energy Technology Data Exchange (ETDEWEB)

    Putrevu, Naga Ravikanth; Darling, Seth B.; Segre, Carlo U.; Ganegoda, Hasitha; Khan, M. Ishaque

    2017-10-04

    The mixed-valent vanadium oxide based three-dimensional framework structure species [Cd3(H2O)12V16IVV2VO36(OH)6(AO4)]∙24H2O, (A=V,S) (Cd3(VO)o) represents a rare example of an interesting sensor material which exhibits NOx {NO+NO2} semiconducting gas sensor properties under ambient conditions. The electrical resistance of the sensor material Cd3(VO)o decreases in air. Combined characterization studies revealed that the building block, {V18O42(AO4)} cluster, of 3-D framework undergoes oxidation and remains intact for at least 2 months. The decrease in resistance is attributable to the reactivity of molecular oxygen towards vanadium which results in an increase in the oxidation state as well as the coordination number of vanadium center and decrease in band gap of Cd3(VO)o. Based on these results we propose that the changes in semiconducting properties of Cd3(VO)o under ambient conditions are due to the greater overlap between the O 2p and V 3d orbitals occurring during the oxidation.

  15. Supported Vanadium Oxide Catalysts: Quantitative Spectroscopy, Preferential Adsorption of V^4+/5+, and Al2O3 Coating of Zeolite Y

    NARCIS (Netherlands)

    Catana, Gabriela; Rao, R.R.; Weckhuysen, B.M.; Voort, Pascal van der; Vansant, Etienne; Schoonheydt, R.A.

    1998-01-01

    A series of supported vanadium oxide catalysts were prepared by the incipient wetness method as a function of the support composition (Al2O3, SiO2, and USY), the metal oxide loading (0-1 wt %), and the impregnation salt (vanadyl sulfate and ammonium vanadate). These catalysts have been studied by

  16. Water clustering on nanostructured iron oxide films

    DEFF Research Database (Denmark)

    Merte, Lindsay Richard; Bechstein, Ralf; Peng, G.

    2014-01-01

    , but it is not well-understood how these hydroxyl groups and their distribution on a surface affect the molecular-scale structure at the interface. Here we report a study of water clustering on a moire-structured iron oxide thin film with a controlled density of hydroxyl groups. While large amorphous monolayer...... islands form on the bare film, the hydroxylated iron oxide film acts as a hydrophilic nanotemplate, causing the formation of a regular array of ice-like hexameric nanoclusters. The formation of this ordered phase is localized at the nanometre scale; with increasing water coverage, ordered and amorphous...

  17. Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide

    Science.gov (United States)

    Ekström, Mattias; Khartsev, Sergiy; Östling, Mikael; Zetterling, Carl-Mikael

    2017-07-01

    4H-SiC electronics can operate at high temperature (HT), e.g., 300°C to 500°C, for extended times. Systems using sensors and amplifiers that operate at HT would benefit from microcontrollers which can also operate at HT. Microcontrollers require nonvolatile memory (NVM) for computer programs. In this work, we demonstrate the possibility of integrating ferroelectric vanadium-doped bismuth titanate (BiTV) thin films on 4H-SiC for HT memory applications, with BiTV ferroelectric capacitors providing memory functionality. Film deposition was achieved by laser ablation on Pt (111)/TiO2/4H-SiC substrates, with magnetron-sputtered Pt used as bottom electrode and thermally evaporated Au as upper contacts. Film characterization by x-ray diffraction analysis revealed predominately (117) orientation. P- E hysteresis loops measured at room temperature showed maximum 2 P r of 48 μC/cm2, large enough for wide read margins. P- E loops were measurable up to 450°C, with losses limiting measurements above 450°C. The phase-transition temperature was determined to be about 660°C from the discontinuity in dielectric permittivity, close to what is achieved for ceramics. These BiTV ferroelectric capacitors demonstrate potential for use in HT NVM applications for SiC digital electronics.

  18. Highly transparent vanadium oxide-graded indium zinc oxide electrodes for flexible organic solar cells

    International Nuclear Information System (INIS)

    Ko, Eun-Hye; Kim, Han-Ki

    2016-01-01

    We investigated characteristics of amorphous V_2O_5-graded InZnO (IZO) films to use as a flexible anode for flexible organic solar cells (FOSCs). Graded sputtering of the V_2O_5 layer on the IZO layer produced V_2O_5-graded IZO anodes (VGIZO) with a sheet resistance of 42.14 Ω/square, a resistivity of 6.32 × 10"−"4 Ω cm, and an optical transmittance of 82.15%, as well as good mechanical flexibility. In addition, the VGIZO electrode showed a greater work function of 5.2 eV than that (4.9 eV) of an IZO anode, which is beneficial for hole extraction from an organic active layer. Due to the higher work function of the VGIZO electrodes, FOSCs fabricated on the flexible VGIZO anode exhibited a higher power conversion efficiency 2.753% than that of FOSCs on the IZO anode. This indicates that the V_2O_5 graded sputtering is a promising technique to increase the work function of the IZO anode without change in sheet resistance and transmittance. - Highlights: • Transparent and flexible V_2O_5 graded IZO (VGIZO) electrodes. • High work function of VGIZO electrodes • The VGIZO film is a promising flexible anode for flexible organic solar cells.

  19. Silver Vanadium Phosphorous Oxide, Ag(2)VO(2)PO(4): Chimie Douce Preparation and Resulting Lithium Cell Electrochemistry.

    Science.gov (United States)

    Kim, Young Jin; Marschilok, Amy C; Takeuchi, Kenneth J; Takeuchi, Esther S

    2011-08-15

    Recently, we have shown silver vanadium phosphorous oxide (Ag(2)VO(2)PO(4), SVPO) to be a promising cathode material for lithium based batteries. Whereas the first reported preparation of SVPO employed an elevated pressure, hydrothermal approach, we report herein a novel ambient pressure synthesis method to prepare SVPO, where our chimie douce preparation is readily scalable and provides material with a smaller, more consistent particle size and higher surface area relative to SVPO prepared via the hydrothermal method. Lithium electrochemical cells utilizing SVPO cathodes made by our new process show improved power capability under constant current and pulse conditions over cells containing cathode from SVPO prepared via the hydrothermal method.

  20. Comparison of distribution and toxicity following repeated oral dosing of different vanadium oxide nanoparticles in mice

    Energy Technology Data Exchange (ETDEWEB)

    Park, Eun-Jung, E-mail: pejtoxic@hanmail.net [Myunggok Eye Research Institute, Konyang University, Daejeon 302-718 (Korea, Republic of); Lee, Gwang-Hee [School of Civil, Environmental, and Architectural Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Yoon, Cheolho [Seoul Center, Korea Basic Science Institute, Seoul 126-16 (Korea, Republic of); Kim, Dong-Wan, E-mail: dwkim1@korea.ac.kr [School of Civil, Environmental, and Architectural Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

    2016-10-15

    Vanadium is an important ultra-trace element derived from fuel product combustion. With the development of nanotechnology, vanadium oxide nanoparticles (VO NPs) have been considered for application in various fields, thus the possibility of release into the environment and human exposure is also increasing. Considering that verification of bioaccumulation and relevant biological responses are essential for safe application of products, in this study, we aimed to identify the physicochemical properties that determine their health effects by comparing the biological effects and tissue distribution of different types of VO NPs in mice. For this, we prepared five types of VO NPs, commercial (C)-VO{sub 2} and -V{sub 2}O{sub 5} NPs and synthetic (S)-VO{sub 2}, -V{sub 2}O{sub 3,} and -V{sub 2}O{sub 5} NPs. While the hydrodynamic diameter of the two types of C-VO NPs was irregular and impossible to measure, those of the three types of S-VO NPs was in the range of 125–170 nm. The S- and C-V{sub 2}O{sub 5} NPs showed higher dissolution rates compared to other VO NPs. We orally dosed the five types of VO NPs (70 and 210 μg/mouse, approximately 2 and 6 mg/kg) to mice for 28 days and compared their biodistribution and toxic effects. We found that S-V{sub 2}O{sub 5} and S-V{sub 2}O{sub 3} NPs more accumulated in tissues compared to other three types of VO NPs, and the accumulated level was in order of heart>liver>kidney>spleen. Additionally, tissue levels of redox reaction-related elements and electrolytes (Na{sup +}, K{sup +}, and Ca{sup 2+}) were most clearly altered in the heart of treated mice. Notably, all S- and C-VO NPs decreased the number of WBCs at the higher dose, while total protein and albumin levels were reduced at the higher dose of S-V{sub 2}O{sub 5} and S-V{sub 2}O{sub 3} NPs. Taken together, we conclude that the biodistribution and toxic effects of VO NPs depend on their dissolution rates and size (surface area). Additionally, we suggest that further studies

  1. Determination of vanadium

    International Nuclear Information System (INIS)

    Stepin, V.V.; Kurbatova, V.I.; Fedorova, N.D.

    1980-01-01

    Titrimetric and potentiometric methods of vanadium determination in ferrovanadium are developed. The essence of the titrimetric method using phenylanthranilic acid as indicator is in the following. Ferrovanadium weighed amount is dissolved in H 2 SO 4 , vanadium is oxidated by potassium permanganate to V(5) and is titrated by a solution of double salt of sulfuric Fe(2) and ammonium in the presence of indicator. Potentiometric titration is carried out using the same indicator [ru

  2. Electrical and optical properties of zinc oxide: thin films

    International Nuclear Information System (INIS)

    Zuhairusnizam Md Darus; Abdul Jalil Yeop Majlis; Anis Faridah Md Nor; Burhanuddin Kamaluddin

    1992-01-01

    Zinc oxide films have been prepared by high temperature oxidation of thermally evaporated zinc films on glass substrates. The resulting films are characterized using X-ray diffraction, optical absorption and electrical conductivity measurements. These zinc oxide films are very transparent and photoconductive

  3. Electrodeposition of Vanadium Oxides at Room Temperature as Cathodes in Lithium-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Michalis Rasoulis

    2017-07-01

    Full Text Available Electrodeposition of vanadium pentoxide coatings was performed at room temperature and a short growth period of 15 min based on an alkaline solution of methanol and vanadyl (III acetyl acetonate. All samples were characterized by X-ray diffraction, Raman spectroscopy, field-emission scanning electron microscopy, cyclic voltammetry, and electrochemical impedance spectroscopy. The current density and electrolyte concentration were found to affect the characteristics of the as-grown coatings presenting enhanced crystallinity and porous structure at the highest values employed in both cases. The as-grown vanadium pentoxide at current density of 1.3 mA·cm−2 and electrolyte concentration of 0.5 M indicated the easiest charge transfer of Li+ across the vanadium pentoxide/electrolyte interface presenting a specific discharge capacity of 417 mAh·g−1, excellent capacitance retention of 95%, and coulombic efficiency of 94% after 1000 continuous Li+ intercalation/deintercalation scans. One may then suggest that this route is promising to prepare large area vanadium pentoxide electrodes with excellent stability and efficiency at very mild conditions.

  4. Enzymatic halogenation and oxidation using an alcohol oxidase-vanadium chloroperoxidase cascade

    NARCIS (Netherlands)

    But, Andrada; Noord, Van Aster; Poletto, Francesca; Sanders, Johan P.M.; Franssen, Maurice C.R.; Scott, Elinor L.

    2017-01-01

    The chemo-enzymatic cascade which combines alcohol oxidase from Hansenula polymorpha (AOXHp) with vanadium chloroperoxidase (VCPO), for the production of biobased nitriles from amino acids was investigated. In the first reaction H2O2 (and acetaldehyde) are generated from ethanol and oxygen by AOXHp.

  5. Metal Oxide Supported Vanadium Substituted Keggin Type Polyoxometalates as Catalyst For Oxidation of Dibenzothiophene

    Science.gov (United States)

    Lesbani, Aldes; Novri Meilyana, Sarah; Karim, Nofi; Hidayati, Nurlisa; Said, Muhammad; Mohadi, Risfidian; Miksusanti

    2018-01-01

    Supported polyoxometalatate H4[γ-H2SiV2W10O40]·nH2O with metal oxide i.e. silica, titanium, and tantalum was successfully synthesized via wet impregnation method to form H4[γ-H2SiV2W10O40]·nH2O-Si, H4[γ-H2SiV2W10O40]·nH2O-Ti, and H4[γ-H2SiV2W10O40]·nH2O-Ta. Characterization was performed using FTIR spectroscopy, X-Ray analyses, and morphology analyses using SEM. All compounds were used as the catalyst for desulfurization of dibenzothiophene (DBT). Silica and titanium supported polyoxometalate H4[γ-H2SiV2W10O40]·nH2O better than tantalum due to retaining crystallinity after impregnation process. On the other hand, compound H H4[γ-H2SiV2W10O40]·nH2O-Ta showed high catalytic activity than other supported metal oxides for desulfurization of DBT. Optimization desulfurization process resulted in 99% conversion of DBT under a mild condition at 70 °C, 0.1 g catalyst, and reaction for 3 hours. Regeneration studies showed catalyst H4[γ-H2SiV2W10O40]·nH2O-Ti was remaining catalytic activity for desulfurization of DBT.

  6. An overview of the oxidation performance of silicide diffusion coatings for vanadium-based alloys for generation IV reactors

    International Nuclear Information System (INIS)

    Chaia, N.; Mathieu, S.; Cozzika, T.; Rouillard, F.; Desgranges, C.; Courouau, J.L.; Petitjean, C.; David, N.; Vilasi, M.

    2013-01-01

    Highlights: ► Diffusion barrier to oxygen were manufactured by pack cementation diffusion process. ► The use of CrSi 2 + Si and TiSi 2 + Si as masteralloys increased the quality of the coating. ► Thermodynamic stability (coatings/vanadium) was obtained at the operating temperature. ► MSi 2 coatings developed low growing oxide scale in air and at low oxygen pressure. ► Coatings presented high compatibility with liquid sodium ( 2 ) for 360 h. - Abstract: This study focuses on the development of new protective coatings for the vanadium-based alloy V-4Cr-4Ti. Halide-activated pack-cementation (HAPC) technique was used to develop V x Si y multilayered diffusive silicide coatings. The outer layers (coatings) were formed of VSi 2 doped with 27 at.% Cr or TiSi 2 . These compounds exhibited a very low oxidation rate at 650 °C, both in air and at a low oxygen pressure (He, 5 ppm O 2 ). The coatings formed mainly of MSi 2 were found to be insensitive to pesting and largely unreactive to liquid sodium ( 2 ) during a 360 h compatibility test at 550 °C.

  7. Hydrothermal synthesis and characterization of novel vanadium oxides and their application as cathodes in lithium secondary batteries

    Science.gov (United States)

    Chirayil, Thomas George

    Novel layered or tunneled vanadium oxides are sought as a substitute for the expensive Lisb{x}CoOsb2 cathode material in lithium rechargeable batteries. The hydrothermal synthesis approach was taken in search of new vanadium oxides in the presence of a structure directing cation, TMA. A systematic study was done on the hydrothermal synthesis of the Vsb{2}Osb{5}-TMAOH-LiOH system. It was determined from this study that the pH of the reaction mixture was very critical in the formation of many compounds. Acetic acid utilized to adjust the pH of the reaction mixture in the presence of TMA behaved as a buffer and maintained a constant pH during the reaction. Hydrothermal synthesis conducted between pH 10 and 2 resulted in the formation of 7 compounds. At the highest pH, a well known compound Lisb3VOsb4, was formed. Between pH 5.2-9, a layered compound, TMAVsb3Osb7 resulted. The thermal treatment of TMAVsb3Osb7 under oxygen lead to an oxidized phase, TMAVsb3Osb8, which increased its lithium capacity significantly. Between pH 5-6, a cluster compound, TMAsb8lbrack Vsb{22}Osb{54}(CHsb3COO)rbrack{*}4Hsb2O with the acetate ion trapped inside the caged Vsb{22}Osb{54} cluster, and a layered vanadium oxide, Lisb{x}Vsb{2-delta}Osb{4-delta}{*}Hsb2O was obtained. The Lisb{x}Vsb{2-delta}Osb{4-delta}{*}Hsb2O compound was dehydrated to form Lisb{x}Vsb{2-delta}Osb{4-delta} and the lithium was removed electrochemically to form a new type of "VOsb2". Several alkylamines, DMSO and an additional water molecule were intercalated to swell the layers of Lisb{x}Vsb{2-delta}Osb{4-delta}{*}Hsb2O. Lowering the pH between 3.0-3.5, resulted in layered compound, TMAVsb4Osb{10}, with TMA residing between the layers. Layered compounds, TMAVsb8Osb{20} and TMAsb{0.17}Hsp+sb{0.1}Vsb2Osb5, were obtained at very acidic conditions. The hydrothermally grown TMAsb{0.17}Hsp+sb{0.1}Vsb2Osb5 is similar to the xerogel Vsb2Osb5 intercalated with TMA synthesized by the sol-gel process. Several trends were observed

  8. Roll-to-Roll Processing of Inverted Polymer Solar Cells using Hydrated Vanadium(V)Oxide as a PEDOT:PSS Replacement

    DEFF Research Database (Denmark)

    Martinez, Nieves Espinosa; Dam, Henrik Friis; Tanenbaum, David M.

    2011-01-01

    roll-to-roll (R2R) processing of all layers. The devices were prepared on flexible polyethyleneterphthalate (PET) and had the structure PET/ITO/ZnO/P3HT:PCBM/V2O5·(H2O)n/Ag. The ITO and silver electrodes were processed and patterned by use of screen printing. The zinc oxide, P3HT:PCBM and vanadium(V)oxide......The use of hydrated vanadium(V)oxide as a replacement of the commonly employed hole transporting material PEDOT:PSS was explored in this work. Polymer solar cells were prepared by spin coating on glass. Polymer solar cells and modules comprising 16 serially connected cells were prepared using full...... layers were processed by slot-die coating. The hydrated vanadium(V)oxide layer was slot-die coated using an isopropanol solution of vanadyl-triisopropoxide (VTIP). Coating experiments were carried out to establish the critical thickness of the hydrated vanadium(V)oxide layer by varying the concentration...

  9. Pore-Size-Tuned Graphene Oxide Frameworks as Ion-Selective and Protective Layers on Hydrocarbon Membranes for Vanadium Redox-Flow Batteries.

    Science.gov (United States)

    Kim, Soohyun; Choi, Junghoon; Choi, Chanyong; Heo, Jiyun; Kim, Dae Woo; Lee, Jang Yong; Hong, Young Taik; Jung, Hee-Tae; Kim, Hee-Tak

    2018-05-07

    The laminated structure of graphene oxide (GO) membranes provides exceptional ion-separation properties due to the regular interlayer spacing ( d) between laminate layers. However, a larger effective pore size of the laminate immersed in water (∼11.1 Å) than the hydrated diameter of vanadium ions (>6.0 Å) prevents its use in vanadium redox-flow batteries (VRFB). In this work, we report an ion-selective graphene oxide framework (GOF) with a d tuned by cross-linking the GO nanosheets. Its effective pore size (∼5.9 Å) excludes vanadium ions by size but allows proton conduction. The GOF membrane is employed as a protective layer to address the poor chemical stability of sulfonated poly(arylene ether sulfone) (SPAES) membranes against VO 2 + in VRFB. By effectively blocking vanadium ions, the GOF/SPAES membrane exhibits vanadium-ion permeability 4.2 times lower and a durability 5 times longer than that of the pristine SPAES membrane. Moreover, the VRFB with the GOF/SPAES membrane achieves an energy efficiency of 89% at 80 mA cm -2 and a capacity retention of 88% even after 400 cycles, far exceeding results for Nafion 115 and demonstrating its practical applicability for VRFB.

  10. Laser patterning of superconducting oxide films

    International Nuclear Information System (INIS)

    Gupta, A.; Hussey, B.W.; Koren, G.; Cooper, E.I.; Jagannathan, R.

    1988-01-01

    The focused output of an argon ion laser (514.5 nm) has been used for wiring superconducting lines of Y/sub 1/Ba/sub 2/CU/sub 3/O/sub 7-δ/ using films prepared from nitrate and trifluoroacetate solution precursors. A stoichiometric solution of the precursors is sprayed or spun on to the substrate to form a film. The film is patterned by irradiating in selected areas to convert the irradiated layers to an intermediate oxide or fluoride state, the nonirradiated areas being unchanged. The nonirradiated areas are then dissolved away, leaving a pattern of the oxide or fluoride material. This patterned layer is converted to the superconducting 1-2-3 oxide in a subsequent annealing step. Maskless patterning of superconducting films has also been demonstrated by laser-assisted etching of the films in aqueous KOH solution. Although superconductivity is destroyed when the films are placed in solution, it can be restored after a brief anneal in oxygen

  11. Swelling of a Zirconium Oxide Film

    International Nuclear Information System (INIS)

    Henderson, Mark; Hawley, Adrian; White, John; Rennie, Adrian

    2005-01-01

    Full text: The structural changes that cause the change in the interlayer spacing of a surfactanttemplated zirconium oxide film have been studied using neutron diffractometry. We report that the film after drying on a glass substrate swells slightly through the addition of benzene by up to 4 Aangstroem on a lattice parameter of about 36 Aangstroem. The (001) and (002) diffraction peaks positions, widths and areas of a swollen film were then monitored by neutron diffraction as a function of benzene desorption. Disorder of the lamellar mesophase is considered as a cause of the observed effects on the diffraction signals. (authors)

  12. Swelling of a mesostructured zirconium oxide film

    Energy Technology Data Exchange (ETDEWEB)

    Henderson, M.J. [Research School of Chemistry, Australian National University, Canberra, ACT 0200 (Australia); Rennie, A.R. [Uppsala University, Studsvik Neutron Research Laboratory, S-611 82 Nykoeping (Sweden); Hawley, A.M. [Research School of Chemistry, Australian National University, Canberra, ACT 0200 (Australia); White, J.W. [Research School of Chemistry, Australian National University, Canberra, ACT 0200 (Australia)]. E-mail: jww@rsc.anu.edu.au

    2006-11-15

    The structural changes that cause the change in interlayer spacing of a surfactant-templated zirconium oxide film have been studied using neutron diffractometry. We report that the film after drying on a glass substrate swells slightly through the addition of benzene by up to 4 A on a lattice parameter of about 36 A. The (0 0 1) and (0 0 2) diffraction peak widths, positions and areas of a swollen film were monitored as a function of benzene desorption. Disorder of the lamellar mesophase is considered as a cause of the observed effects on the diffraction signals.

  13. Investigation of vanadium oxide bronzes of phase β by means of annihilation of positrons

    International Nuclear Information System (INIS)

    Dryzek, E.

    1992-01-01

    The vanadium bronzes with general composition M x V 2 O 5 (where M means the donor element Li, Na, K, Cu, Na) have been the object of the investigation. The positron annihilation method as well as the broadening of the annihilation line in Doppler spectra have been the basing methods for the study of material structure. The donor lattice vacancies have been investigated as a positron traps being responsible for the shape of annihilation spectra. The model of clustering of donor ions has been constructed. On that base and temperature dependence of the positron annihilation spectra the thermodynamical parameters of donor ion vacancies in vanadium bronzes have been calculated. 112 refs, 33 figs, 11 tabs

  14. Hydration effects on the molecular structure of silica-supported vanadium oxide catalysts: A combined IR, Raman, UV–vis and EXAFS study

    NARCIS (Netherlands)

    Keller, D.E.; Visser, T.; Soulimani, F.; Koningsberger, D.C.; Weckhuysen, B.M.

    2007-01-01

    The effect of hydration on the molecular structure of silica-supported vanadium oxide catalysts with loadings of 1–16 wt.% V has been systematically investigated by infrared, Raman, UV–vis and EXAFS spectroscopy. IR and Raman spectra recorded during hydration revealed the formation of V–OH groups,

  15. Microstructure and mechanical properties of diamond films on titanium-aluminum-vanadium alloy

    Science.gov (United States)

    Catledge, Shane Aaron

    The primary focus of this dissertation is the investigation of the processing-structure-property relationships of diamond films deposited on Ti-6Al-4V alloy by microwave plasma chemical vapor deposition (MPCVD). By depositing a well-adhered protective layer of diamond on an alloy component, its hardness, wear-resistance, performance, and overall lifetime could be significantly increased. However, due to the large thermal expansion mismatch between the diamond film and metal (and the corresponding residual stress induced in the film), film adhesion is typically unsatisfactory and often results in immediate delamination after processing. Therefore, it is a major goal of this research to improve adhesion of the diamond film to the alloy substrate. Through the use of innovative processing techniques involving MPCVD deposition conditions and methane (CH4), nitrogen (N2), and hydrogen (H2) chemistry, we have achieved diamond films which consistently adhere to the alloy substrate. In addition, we have discovered that, with the appropriate choice of deposition conditions, the film structure can be tailored to range from highly crystalline, well-faceted diamond to nanocrystalline diamond with extremely low surface roughness (as low as 27 nm). The relationship between processing and structure was studied using in-situ optical emission spectroscopy, micro-Raman spectroscopy, surface profilometry, glancing-angle x-ray diffraction, and scanning electron microscopy. We observe that when nitrogen is added to the H2/CH4 feedgas mixture, a carbon-nitrogen (CN) emission band arises and its relative abundance to the carbon dimer (C2) gas species is shown to have a pronounced influence on the diamond film structure. By appropriate choice of deposition chemistry and conditions, we can tailor the diamond film structure and its corresponding properties. The mechanical properties of interest in this thesis are those relating to the integrity of the film/substrate interface, as well as the

  16. Hexagonal mesoporous titanosilicates as support for vanadium oxide-Promising catalysts for the oxidative dehydrogenation of n-butane

    Czech Academy of Sciences Publication Activity Database

    Setnička, M.; Čičmanec, P.; Bulánek, R.; Zukal, Arnošt; Pastva, Jakub

    2013-01-01

    Roč. 204, APR 2013 (2013), s. 132-139 ISSN 0920-5861 R&D Projects: GA ČR GAP106/10/0196 Institutional support: RVO:61388955 Keywords : mesoporous titanosilicate * hexagonal mesoporous structure * vanadium Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.309, year: 2013

  17. Aluminum oxide film thickness and emittance

    International Nuclear Information System (INIS)

    Thomas, J.K.; Ondrejcin, R.S.

    1991-11-01

    Aluminum reactor components which are not actively cooled could be subjected to high temperatures due to gamma heating after the core coolant level dropped during the ECS phase of a hypothetical LOCA event. Radiative heat transfer is the dominant heat transfer process in this scenario and therefore the emittance of these components is of interest. Of particular interest are the safety rod thimbles and Mark 60B blanket assemblies; for the K Reactor, these components have been exposed to low temperature (< 55 degrees C) moderator for about a year. The average moderator temperature was assumed to be 30 degrees C. The Al oxide film thickness at this temperature, after one year of exposure, is predicted to be 6.4 μm ± 10%; insensitive to exposure time. Dehydration of the film during the gamma heating accident would result in a film thickness of 6.0 μm ± 11%. Total hemispherical emittance is predicted to be 0.69 at 96 degrees C, decreasing to 0.45 at 600 degrees C. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental conditions were neglected and the predicted film thickness values are therefore conservative. The emittance values predicted for a given film thickness are also conservative. The conservativisms inherent in the predicted emittance are particularly relevant for uncertainty analysis of temperatures generated using these values

  18. Magnetic properties of partially oxidized Fe films

    Science.gov (United States)

    Garcia, Miguel Angel; Lopez-Dominguez, Victor; Hernando, Antonio

    Hybrid magnetic nanostructures exhibit appealing properties due to interface and proximity effects. A simple and interesting system of hybrid magnetic nanomaterials are partially oxidized ferromagnetic films. We have fabricated Fe films by thermal evaporation and performed a partial oxidation to magnetite (Fe3O4) by annealing in air at different times and temperatures. The magnetic properties of the films evolve from those of pure metallic iron to pure magnetite, showing intermediate states where the proximity effects control the magnetic behavior. At some stages, the magnetization curves obtained by SQUID and MOKE magnetometry exhibit important differences due to the dissimilar contribution of both phases to the magneto-optical response of the system This work has been supported by the Ministerio Español de Economia y Competitividad (MINECO) MAT2013-48009-C4-1. V.L.D and M.A.G. acknowledges financial support from BBVA foundation.

  19. PC-ANN assisted to the determination of Vanadium (IV) ion using an optical sensor based on immobilization of Eriochorome Cyanine R on a triacetylcellulose film.

    Science.gov (United States)

    Bordbar, Mohammad Mahdi; Khajehsharifi, Habibollah; Solhjoo, Aida

    2015-01-01

    More detailed analytical studies of an optical sensor based on immobilization of Eriochorome Cyanine R (ECR) on a triacetylcellulose film have been described to determine Vanadium (IV) ions in some real samples. The sensor based on complex formation between Vanadium (IV) ions and ECR in acidic media caused the color of the film to change from violet to blue along with the appearance of a strong peak appears at 595 nm. At the optimal conditions, the calibration curve showed a linear range of 9.90×10(-7)-8.25×10(-5)mol L(-1). Vanadium (IV) ions can be detected with a detection limit of 1.03×10(-7)mol L(-1) within 15 min depending on its concentration. Also, the working range was improved by using PC-ANN algorithm. The sensor could regenerate with dilute acetic acid solution and could be completely reversible. The proposed sensor was successfully applied for determining V (IV) ions in environmental water and tea leaves. Copyright © 2015 Elsevier B.V. All rights reserved.

  20. Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Boltz, Janika

    2011-12-12

    Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO{sub 2} and TiO{sub 2}. In order to achieve transparent and conductive films free carriers have to be generated by oxygen vacancies, by metal ions at interstitial positions in the crystal lattice or by cation doping with Sb or Nb, respectively. Antimony doped tin oxide and niobium doped titanium oxide films have been prepared by reactive direct current magnetron sputtering (dc MS) from metallic targets. The process parameters and the doping concentration in the films have been varied. The films have been electrically, optically and structurally analysed in order to analyse the influence of the process parameters and the doping concentration on the film properties. Post-deposition treatments of the films have been performed in order to improve the film properties. For the deposition of transparent and conductive tin oxide, the dominant parameter during the deposition is the oxygen content in the sputtering gas. The Sb incorporation as doping atoms has a minor influence on the electrical, optical and structural properties. Within a narrow oxygen content in the sputtering gas highly transparent and conductive tin oxide films have been prepared. In this study, the lowest resistivity in the as deposited state is 2.9 m{omega} cm for undoped tin oxide without any postdeposition treatment. The minimum resistivity is related to a transition to crystalline films with the stoichiometry of SnO{sub 2}. At higher oxygen content the films turn out to have a higher resistivity due to an oxygen excess. After post

  1. Studies of vanadium-phosphorus-oxygen selective oxidation catalysts by sup 31 P and sup 51 V NMR spin-echo and volume susceptibility measurements

    Energy Technology Data Exchange (ETDEWEB)

    Li, Juan.

    1991-10-01

    The purpose of this work is to characterize the vanadium-phosphorous oxide (V-P-O) catalysts for the selective oxidation of n-butane and 1-butene to maleic anhydride. The utility of solid state nuclear magnetic resonance as an analytical tool in this investigation lies in its sensitivity to the electronic environment surrounding the phosphorous and vanadium nuclei, and proximity of paramagnetic species. Spin-echo mapping NMR of {sup 31}p and {sup 51}v and volume magnetic susceptibility measurements were used as local microscopic probes of the presence of V{sup 5+}, V{sup 4+}, V{sup 3+} species in the model compounds: {beta}-VOPO{sub 4}, {beta}-VOPO{sub 4} treated with n-butane/1-butene, (VO){sub 2}P{sub 2}O{sub 7} treated with n-butane/1-butene; and industrial catalysts with P/V (phosphorus to vanadium) ratio of 0.9, 1.0 and 1.1, before and after treatment with n-butane and 1-butene. The NMR spectra provide a picture of how the oxidation states of vanadium are distributed in these catalysts. 73 refs., 32 figs., 8 tabs.

  2. New vanadium oxides with perovskite type structure: AThV/sub 2/O/sub 6/ (A=Ca,Sr)

    Energy Technology Data Exchange (ETDEWEB)

    Vidyasagar, K; Gopalakrishnan, J

    1982-07-01

    New perovskite oxides of the formula AThV/sub 2/O/sub 6/ (A=Ca,Sr) have been prepared by reduction of the corresponding AThV/sub 2/O/sub 8/ under hydrogen atmosphere. CaThV/sub 2/O/sub 6/ crystallizes in an orthorhombic LaVO/sub 3/ type structure, while the strontium compound exhibiting cation-deficient nonstoichiometry. SrThsub(1-x)V/sub 2/O/sub 6/ (x approx. 0.4), is cubic. The magnetic susceptibility behaviour of the calcium compound is similar to that of V/sup 3 +/ perovskites, while the strontium compound exhibits a large increase in susceptibility below 130K, the behaviour being likely to be associated with the mixed-valence character of vanadium.

  3. Photoconduction in silicon rich oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Luna-Lopez, J A; Carrillo-Lopez, J; Flores-Gracia, F J; Garcia-Salgado, G [CIDS-ICUAP, Benemerita Universidad Autonoma de Puebla. Ed. 103 D and C, col. San Manuel, Puebla, Pue. Mexico 72570 (Mexico); Aceves-Mijares, M; Morales-Sanchez, A, E-mail: jluna@buap.siu.m, E-mail: jluna@inaoep.m [INAOE, Luis Enrique Erro No. 1, Apdo. 51, Tonantzintla, Puebla, Mexico 72000 (Mexico)

    2009-05-01

    Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH{sub 4} (silane) and N{sub 2}O (nitrous oxide) as reactive gases at 700 {sup 0}. The gas flow ratio, Ro = [N{sub 2}O]/[SiH{sub 4}] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to R{sub o} = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies ({approx}3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.

  4. Flux pinning by voids in surface-oxidized superconducting niobium and vanadium

    International Nuclear Information System (INIS)

    Meij, G.P. van der.

    1984-03-01

    The volume pinning force in several niobium and vanadium samples with voids is determined at various temperatures. Reasonable agreement is found with the collective pinning theory of Larkin and Ovchinnikov above the field of maximum pinning, if the flux line lattice is assumed to be amorphous in this region and if the elementary pinning force is calculated from the quasi-classical theory of Thuneberg, Kurkijaervi, and Rainer. Also some history and relaxation effects are studied in an alternating field. A qualitative explanation is given in terms of flux line dislocations, which reduce the shear strength of the flux line lattice. (Auth.)

  5. Flux pinning by voids in surface-oxidized superconducting niobium and vanadium

    International Nuclear Information System (INIS)

    Meij, G.P. van der.

    1984-01-01

    This thesis describes a study of flux pinning by small voids (roughly 10 nm) in the type II superconductors niobium and vanadium. These voids were created in rectangular foils (with typical dimensions of 30x3x0.2 mm) during an irradiation with fast neutrons in the High Flux Reactor at Petten at temperatures between 400 and 1000 0 C. The pinning force per unit volume is determined from the magnetic properties of the superconducting samples. The experiments were carried out in a slowly ramped magnetic field, as well as in a combination of a static and a much smaller alternating field. (Auth.)

  6. Vanadium determination through analytic oxidation reaction of the p-aminophenol

    International Nuclear Information System (INIS)

    Heinberger, L.; Morais, N.M.T. de

    1981-01-01

    A simple sensitive and rapid method has been developed for catalytic determination of micro-quantities of vanadium. Its sensitivity is comparable to other methods published in the literature, and the results obtained are in conformity with the Lambert-Beer law (4x10 -3 -4x10 -2 μg/ml) et 460nm. The molar absorptivity (epsilon) has been found to be 9.25x10 5 , and the interferences of 27 cations and 8 anions have been studied. (Author) [pt

  7. Fabrication of vanadium cans for neutron diffraction experiments

    Energy Technology Data Exchange (ETDEWEB)

    Chung, Chin man; Baik, Sung Hoon; Park, Sun Kyu

    1999-12-01

    The laser weld technique of vanadium developed to experiment for neutron diffraction of HANARO. The demands for this laser welding technique were applied to process control in vanadium film welding and to fabricate various sizing vanadium cans. The vanadium can had a advantage to have less coherent in neutron. KAERI developed the fabrication jig of 6-12 mm diameter cans using 0.125 mm vanadium thin film, and investigated the laser welding procedure for making the various diameter and length of vanadium cans using the fabricated jigs and Nd:YAG laser. (author)

  8. Nanorod niobium oxide as powerful catalysts for an all vanadium redox flow battery.

    Science.gov (United States)

    Li, Bin; Gu, Meng; Nie, Zimin; Wei, Xiaoliang; Wang, Chongmin; Sprenkle, Vincent; Wang, Wei

    2014-01-08

    A powerful low-cost electrocatalyst, nanorod Nb2O5, is synthesized using the hydrothermal method with monoclinic phases and simultaneously deposited on the surface of a graphite felt (GF) electrode in an all vanadium flow battery (VRB). Cyclic voltammetry (CV) study confirmed that Nb2O5 has catalytic effects toward redox couples of V(II)/V(III) at the negative side and V(IV)/V(V) at the positive side to facilitate the electrochemical kinetics of the vanadium redox reactions. Because of poor conductivity of Nb2O5, the performance of the Nb2O5 loaded electrodes is strongly dependent on the nanosize and uniform distribution of catalysts on GF surfaces. Accordingly, an optimal amount of W-doped Nb2O5 nanorods with minimum agglomeration and improved distribution on GF surfaces are established by adding water-soluble compounds containing tungsten (W) into the precursor solutions. The corresponding energy efficiency is enhanced by ∼10.7% at high current density (150 mA·cm(-2)) as compared with one without catalysts. Flow battery cyclic performance also demonstrates the excellent stability of the as prepared Nb2O5 catalyst enhanced electrode. These results suggest that Nb2O5-based nanorods, replacing expensive noble metals, uniformly decorating GFs holds great promise as high-performance electrodes for VRB applications.

  9. Vanadium-substituted heteropolyacids immobilized on amine- functionalized mesoporous MCM-41: A recyclable catalyst for selective oxidation of alcohols with H2O2

    International Nuclear Information System (INIS)

    Dong, Xinbo; Wang, Danjun; Li, Kebin; Zhen, Yanzhong; Hu, Huaiming; Xue, Ganglin

    2014-01-01

    Graphical abstract: Vanadium-substituted phosphotungstic acids are immobilized on amine- functionalized mesoporous MCM-41 and the hybrid catalyst is proved to be a highly efficient solid catalyst for the oxidation of aromatic alcohols to the corresponding carbonyl compounds with H 2 O 2 , featured by the high conversion and selectivity, easy recovery, and quite steady reuse. - Highlights: • Vanadium-substituted phosphotungstic acid immobilized on amine-functionalized mesoporous MCM-41 are prepared. • HPAs were fixed on the inner surface of mesoporous MCM-41 by chemical bonding to aminosilane groups. • The hybrid catalyst showed much higher catalytic activity than the pure HPAs. • The hybrid catalyst is a highly efficient recyclable solid catalyst for the selective oxidation of aromatic alcohols. - Abstract: New hybrid materials of vanadium-substituted phosphotungstic acids (VHPW) immobilized on amine-functionalized mesoporous MCM-41 (VHPW/MCM-41/NH 2 ) are prepared and characterized by FT-IR, XRD, N 2 adsorption, elemental analysis, SEM and TEM for their structural integrity and physicochemical properties. It is found that the structure of the heteropolyacids is retained upon immobilization over mesoporous materials. The catalytic activities of these hybrid materials are tested in the selective oxidation of alcohols to the carbonyl products with 30% aqueous H 2 O 2 as oxidant in toluene. The catalytic activities of different number of vanadium-substituted phosphotungstic acid are investigated, and among the catalysts, H 5 [PV 2 W 10 O 40 ] immobilized on amine-functionalized MCM-41 exhibits the highest activity with 97% conversion and 99% selectivity in the oxidation of benzyl alcohol to benzaldehyde. The hybrid catalyst is proved to be a highly efficient recyclable solid catalyst for the selective oxidation of aromatic alcohols to the corresponding aldehydes with H 2 O 2

  10. Vanadium-substituted heteropolyacids immobilized on amine- functionalized mesoporous MCM-41: A recyclable catalyst for selective oxidation of alcohols with H{sub 2}O{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Xinbo [Key Laboratory of Synthetic and Natural Functional Molecule Chemistry, Department of Chemistry (Ministry of Education), Northwest University, Xi' an 710069 (China); Wang, Danjun [Key Laboratory of Synthetic and Natural Functional Molecule Chemistry, Department of Chemistry (Ministry of Education), Northwest University, Xi' an 710069 (China); College of Chemistry Chemical Engineering, Yanan University, Shaanxi Key Laboratory of Chemical Reaction Engineering, Yan' an 716000 (China); Li, Kebin [Key Laboratory of Synthetic and Natural Functional Molecule Chemistry, Department of Chemistry (Ministry of Education), Northwest University, Xi' an 710069 (China); Zhen, Yanzhong [Key Laboratory of Synthetic and Natural Functional Molecule Chemistry, Department of Chemistry (Ministry of Education), Northwest University, Xi' an 710069 (China); College of Chemistry Chemical Engineering, Yanan University, Shaanxi Key Laboratory of Chemical Reaction Engineering, Yan' an 716000 (China); Hu, Huaiming [Key Laboratory of Synthetic and Natural Functional Molecule Chemistry, Department of Chemistry (Ministry of Education), Northwest University, Xi' an 710069 (China); Xue, Ganglin, E-mail: xglin707@163.com [Key Laboratory of Synthetic and Natural Functional Molecule Chemistry, Department of Chemistry (Ministry of Education), Northwest University, Xi' an 710069 (China)

    2014-09-15

    Graphical abstract: Vanadium-substituted phosphotungstic acids are immobilized on amine- functionalized mesoporous MCM-41 and the hybrid catalyst is proved to be a highly efficient solid catalyst for the oxidation of aromatic alcohols to the corresponding carbonyl compounds with H{sub 2}O{sub 2}, featured by the high conversion and selectivity, easy recovery, and quite steady reuse. - Highlights: • Vanadium-substituted phosphotungstic acid immobilized on amine-functionalized mesoporous MCM-41 are prepared. • HPAs were fixed on the inner surface of mesoporous MCM-41 by chemical bonding to aminosilane groups. • The hybrid catalyst showed much higher catalytic activity than the pure HPAs. • The hybrid catalyst is a highly efficient recyclable solid catalyst for the selective oxidation of aromatic alcohols. - Abstract: New hybrid materials of vanadium-substituted phosphotungstic acids (VHPW) immobilized on amine-functionalized mesoporous MCM-41 (VHPW/MCM-41/NH{sub 2}) are prepared and characterized by FT-IR, XRD, N{sub 2} adsorption, elemental analysis, SEM and TEM for their structural integrity and physicochemical properties. It is found that the structure of the heteropolyacids is retained upon immobilization over mesoporous materials. The catalytic activities of these hybrid materials are tested in the selective oxidation of alcohols to the carbonyl products with 30% aqueous H{sub 2}O{sub 2} as oxidant in toluene. The catalytic activities of different number of vanadium-substituted phosphotungstic acid are investigated, and among the catalysts, H{sub 5}[PV{sub 2}W{sub 10}O{sub 40}] immobilized on amine-functionalized MCM-41 exhibits the highest activity with 97% conversion and 99% selectivity in the oxidation of benzyl alcohol to benzaldehyde. The hybrid catalyst is proved to be a highly efficient recyclable solid catalyst for the selective oxidation of aromatic alcohols to the corresponding aldehydes with H{sub 2}O{sub 2}.

  11. Oxide films on magnesium and magnesium alloys

    International Nuclear Information System (INIS)

    Shih, T.-S.; Liu, J.-B.; Wei, P.-S.

    2007-01-01

    Magnesium alloys are very active and readily ignite during heating and melting. In this study, we discuss the combustion of magnesium and magnesium alloys and propose prospective anti-ignition mechanisms for magnesium alloys during the heating process. When magnesium and magnesium alloys were heated in air, the sample surfaces produced layers of thermally formed oxides. These thermally formed oxides played an important role in affecting the combustion of the magnesium and magnesium alloys. When magnesium was heated in air, brucite that formed in the early stage was then transformed into periclase by dehydroxylation. By extending the heating time, more periclase formed and increased in thickness which was associated with microcracks formation. When magnesium was heated in a protective atmosphere (SF 6 ), a film of MgF 2 formed at the interface between the oxide layer and the Mg substrate. This film generated an anti-ignition behavior which protected the substrate from oxidation. When solution-treated AZ80 alloy was heated, spinel developed at the interface between the thermally formed oxide layer and the Mg substrate, improving the anti-ignition properties of the substrate. In addition, we also explain the effects of beryllium in an AZB91 alloy on the ignition-proofing behavior

  12. Chemically abrupt interface between Ce oxide and Fe films

    International Nuclear Information System (INIS)

    Lee, H.G.; Lee, D.; Kim, S.; Kim, S.G.; Hwang, Chanyong

    2005-01-01

    A chemically abrupt Fe/Ce oxide interface can be formed by initial oxidation of an Fe film followed by deposition of Ce metal. Once a Ce oxide layer is formed on top of Fe, it acts a passivation barrier for oxygen diffusion. Further deposition of Ce metal followed by its oxidation preserve the abrupt interface between Ce oxide and Fe films. The Fe and Ce oxidation states have been monitored at each stage using X-ray photoelectron spectroscopy

  13. Researches on vanadium and its compounds; Recherches sur le Vanadium et ses composes

    Energy Technology Data Exchange (ETDEWEB)

    Morette, Andre

    1937-06-03

    In this research thesis, the author proposes a new study of the action of some reduction agents on two groups of vanadium compounds, oxides and chlorides. Thus, he reports the study of the circumstances of reduction of vanadium oxides by carbon and of vanadium carburization from these compounds. He also reports the determination of the composition of vanadium melts obtained at high temperatures (either in a vacuum furnace or with an electric arc furnace). In order to determine in which conditions the processing of vanadium oxides could produce the pure metal, the author studied the action of calcium and magnesium on the vanadium pentoxide and trioxide. The second part of the thesis addresses the preparation of pure vanadium from vanadium anhydride chlorides. Then, the author reports the development of processes which could easily produce powdered vanadium [French] Nous nous sommes propose de reprendre l'etude de l'action de quelques reducteurs sur les deux groupes de composes du vanadium, oxydes et chlorures. Nous avons ete ainsi amene a preciser les circonstances de la reduction des oxydes de vanadium par le carbone et de la carburation du vanadium a partir de ceux-ci, puis a determiner la constitution des fontes de vanadium obtenues a haute temperature, soit au four a vide, soit au four a arc. D'autre part, en vue de determiner dans quelles conditions le traitement des oxydes de vanadium pourrait conduire au metal pur, nous avons repris et complete des travaux anterieurs concernant l'action du calcium et du magnesium sur le pentoxyde ou eventuellement le trioxyde de vanadium. Une seconde partie de notre these a ete consacree a la preparation du vanadium pur a partir des chlorures anhydres de vanadium. Nous nous sommes attache a trouver le mode operatoire le plus favorable pour l'obtention de chacun d'eux. Il nous a ete donne ainsi l'occasion de preciser certaines de leurs proprietes physiques et chimiques. Puis, a la suite d'essais systematiques, nous avons

  14. Samarium-modified vanadium phosphate catalyst for the selective oxidation of n-butane to maleic anhydride

    International Nuclear Information System (INIS)

    Wu, Hua-Yi; Wang, Hai-Bo; Liu, Xin-Hua; Li, Jian-Hui; Yang, Mei-Hua; Huang, Chuan-Jing; Weng, Wei-Zheng; Wan, Hui-Lin

    2015-01-01

    Graphical abstract: The addition of a small amount of Sm into VPO catalyst brought about great changes in its physicochemical properties such as surface area, surface morphology, phase composition and redox property, thus leading to a higher catalytic performance in the selective oxidation of n-butane to maleic anhydride, as compared to the undoped VPO catalyst. - Highlights: • The addition of Sm leads to great changes in the structure of VPO catalyst. • Sm improves performance of VPO for oxidation of n-butane to maleic anhydride. • Catalytic performance is closely related to structure of VPO catalyst. - Abstract: A series of samarium-modified vanadium phosphate catalysts were prepared and studied in selective oxidation of n-butane to maleic anhydride. The catalytic evaluation showed that Sm modification significantly increased the overall n-butane conversion and intrinsic activity. N 2 -adsorption, XRD, SEM, Raman, XPS, EPR and H 2 -TPR techniques were used to investigate the intrinsic difference among these catalysts. The results revealed that the addition of Sm to VPO catalyst can increase the surface area of the catalyst, lead to a significant change in catalyst morphology from plate-like structure into rosette-shape clusters, and largely promote the formation of (VO) 2 P 2 O 7 . All of these were related to the different catalytic performance of Sm-doped and undoped VPO catalysts. The roles of the different VOPO 4 phases and the influence of Sm were also described and discussed

  15. Controlling phase separation in vanadium dioxide thin films via substrate engineering

    Science.gov (United States)

    Gilbert Corder, Stephanie N.; Jiang, Jianjuan; Chen, Xinzhong; Kittiwatanakul, Salinporn; Tung, I.-Cheng; Zhu, Yi; Zhang, Jiawei; Bechtel, Hans A.; Martin, Michael C.; Carr, G. Lawrence; Lu, Jiwei; Wolf, Stuart A.; Wen, Haidan; Tao, Tiger H.; Liu, Mengkun

    2017-10-01

    The strong electron-lattice interactions in correlated electron systems provide unique opportunities for altering the material properties with relative ease and flexibility. In this Rapid Communication, we use localized strain control via a focused-ion-beam patterning of Ti O2 substrates to demonstrate that one can selectively engineer the insulator-to-metal transition temperature, the fractional component of the insulating and metallic phases, and the degree of optical anisotropy down to the length scales of the intrinsic phase separation in V O2 thin films without altering the quality of the films. The effects of localized strain control on the strongly correlated electron system are directly visualized by state-of-the-art IR near-field imaging and spectroscopy techniques and x-ray microdiffraction measurements.

  16. Decomposition of multilayer benzene and n-hexane films on vanadium.

    Science.gov (United States)

    Souda, Ryutaro

    2015-09-21

    Reactions of multilayer hydrocarbon films with a polycrystalline V substrate have been investigated using temperature-programmed desorption and time-of-flight secondary ion mass spectrometry. Most of the benzene molecules were dissociated on V, as evidenced by the strong depression in the thermal desorption yields of physisorbed species at 150 K. The reaction products dehydrogenated gradually after the multilayer film disappeared from the surface. Large amount of oxygen was needed to passivate the benzene decomposition on V. These behaviors indicate that the subsurface sites of V play a role in multilayer benzene decomposition. Decomposition of the n-hexane multilayer films is manifested by the desorption of methane at 105 K and gradual hydrogen desorption starting at this temperature, indicating that C-C bond scission precedes C-H bond cleavage. The n-hexane dissociation temperature is considerably lower than the thermal desorption temperature of the physisorbed species (140 K). The n-hexane multilayer morphology changes at the decomposition temperature, suggesting that a liquid-like phase formed after crystallization plays a role in the low-temperature decomposition of n-hexane.

  17. Determination of micro amounts of vanadium by oxidative coupling of α-naphthol and p-phenylenediamine

    International Nuclear Information System (INIS)

    Hainberger, S.J.; Damasceno, R.N.

    1975-01-01

    A sensitive determination of vanadium is described. In the presence of the necessary amount of potassium chlorate and small amounts of vanadium, α-naphthol and p-phenylenediamine react to yield a dyestuff, which exhibits an absorption maximum at 345 nm. The Lambert-Beer law is followed at 0.008-0.12 μg vanadium per ml. The molar extinction amounts to 54 x 10 4 .mol -1 The removal of the interfering cations is described. (author)

  18. Melt quenched vanadium oxide embedded in graphene oxide sheets as composite electrodes for amperometric dopamine sensing and lithium ion battery applications

    Energy Technology Data Exchange (ETDEWEB)

    Sreejesh, M. [Materials Research Laboratory, Department of Physics, National Institute of Technology Karnataka, P.O. Srinivasnagar, Surathkal, Mangaluru 575 025 (India); Shenoy, Sulakshana [Functional Nanostructured Materials Research Laboratory, Department of Physics, National Institute of Technology Karnataka, P.O. Srinivasnagar, Surathkal, Mangaluru 575 025 (India); Sridharan, Kishore, E-mail: kishore@nitk.edu.in [Functional Nanostructured Materials Research Laboratory, Department of Physics, National Institute of Technology Karnataka, P.O. Srinivasnagar, Surathkal, Mangaluru 575 025 (India); Kufian, D.; Arof, A.K. [Centre for Ionics, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Nagaraja, H.S., E-mail: nagaraja@nitk.edu.in [Materials Research Laboratory, Department of Physics, National Institute of Technology Karnataka, P.O. Srinivasnagar, Surathkal, Mangaluru 575 025 (India)

    2017-07-15

    Highlights: • Layered vanadium oxides (MVO) are prepared through melt quenching process. • MVO is hydrothermally treated with graphene oxide to form MVGO composites. • Dopamine detection capacity using MVGO is 0.07 μM with good selectivity. • Sensitivity of dopamine detection is 25.02 μA mM{sup −1} cm{sup −2}. • Discharge capacity of MVGO electrode is 200 mAhg{sup −1} after 10 cycles. - Abstract: Electrochemical sensors and lithium-ion batteries are two important topics in electrochemistry that have attracted much attention owing to their extensive applications in enzyme-free biosensors and portable electronic devices. Herein, we report a simple hydrothermal approach for synthesizing composites of melt quenched vanadium oxide embedded on graphene oxide of equal proportion (MVGO50) for the fabrication of electrodes for nonenzymatic amperometic dopamine sensor and lithium-ion battery applications. The sensing performance of MVGO50 electrodes through chronoamperometry studies in 0.1 M PBS solution (at pH 7) over a wide range of dopamine concentration exhibited a highest sensitivity of 25.02 μA mM{sup −1} cm{sup −2} with the lowest detection limit of 0.07 μM. In addition, the selective sensing capability of MVGO50 was also tested through chronoamperometry studies by the addition of a very small concentration of dopamine (10 μM) in the presence of a fairly higher concentration of uric acid (10 mM) as the interfering species. Furthermore, the reversible lithium cycling properties of MVGO50 are evaluated by galvanostatic charge-discharge cycling studies. MVGO50 electrodes exhibited enhanced rate capacity of up to 200 mAhg{sup −1} at a current of 0.1C rate and remained stable during cycling. These results indicate that MVGO composites are potential candidates for electrochemical device applications.

  19. Optical spectra of vanadium (5, 4) compounds during extraction by di-2-ethylhexylphosphoric acid

    International Nuclear Information System (INIS)

    Kurbatova, L.D.; Medvedeva, N.I.

    2000-01-01

    Optical spectra of vanadium (5, 4) complexes with HDEHP are studied using literature data on quantum-chemical calculations of vanadium (5) and vanadium (4) oxides. Extraction of vanadium is conducted by undiluted HDEHP from sulfuric acid solutions. Absorption electron spectra (AES) of vanadium (5), vanadium (4) and vanadium (5, 4) compounds are presented. In AES of vanadium (5, 4) four absorption bands at 24000, 17000, 14500 and 13500 cm -1 appear. Comparison with spectra of vanadium (5) and vanadium (4) shows that band 17000 cm -1 which appears only during mutual extraction of vanadium (5) and vanadium (4) is caused by transitions appearing between filled and empty levels of d-zone broadened by vanadium (5) and vanadium (4) interaction [ru

  20. Dehydrogenation of Isobutane with Carbon Dioxide over SBA-15-Supported Vanadium Oxide Catalysts

    Directory of Open Access Journals (Sweden)

    Chunling Wei

    2016-10-01

    Full Text Available A series of vanadia catalysts supported on SBA-15 (V/SBA with a vanadia (V content ranging from 1% to 11% were prepared by an incipient wetness method. Their catalytic behavior in the dehydrogenation of isobutane to isobutene with CO2 was examined. The catalysts were characterized by N2 adsorption, X-ray diffraction (XRD, scanning electron microscopy (SEM, Raman spectroscopy, and temperature-programmed reduction (TPR. It was found that these catalysts were effective for the dehydrogenation reaction, and the catalytic activity is correlated with the amount of dispersed vanadium species on the SBA-15 support. The 7% V/SBA catalyst shows the highest activity, which gives 40.8% isobutane conversion and 84.8% isobutene selectivity. The SBA-15-supported vanadia exhibits higher isobutane conversion and isobutene selectivity than the MCM-41-supported one.

  1. Photoconductivity of reduced graphene oxide and graphene oxide composite films

    International Nuclear Information System (INIS)

    Liang, Haifeng; Ren, Wen; Su, Junhong; Cai, Changlong

    2012-01-01

    A photoconductive device was fabricated by patterning magnetron sputtered Pt/Ti electrode and Reduced Graphene Oxide (RGO)/Graphene Oxide (GO) composite films with a sensitive area of 10 × 20 mm 2 . The surface morphology of as-deposited GO films was observed by scanning electronic microscopy, optical microscopy and atomic force microscopy, respectively. The absorption properties and chemical structure of RGO/GO composite films were obtained using a spectrophotometer and an X-ray photoelectron spectroscopy. The photoconductive properties of the system were characterized under white light irradiation with varied output power and biased voltage. The results show that the resistance decreased from 210 kΩ to 11.5 kΩ as the irradiation power increased from 0.0008 mW to 625 mW. The calculated responsiveness of white light reached 0.53 × 10 −3 A/W. Furthermore, the device presents a high photo-conductivity response and displays a photovoltaic response with an open circuit voltage from 0.017 V to 0.014 V with irradiation power. The sources of charge are attributed to efficient excitation dissociation at the interface of the RGO/GO composite film, coupled with cross-surface charge percolation.

  2. Investigation of ferromagnetism in oxygen deficient hafnium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Krockenberger, Yoshiharu; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Suter, Andreas [PSI, Villingen (Switzerland); Wilhelm, Fabrice; Rogalev, Andrei [ESRF, Grenoble (France)

    2008-07-01

    Oxygen deficient thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. RF-activated oxygen was used for the in situ oxidation of hafnium oxide thin films. Oxidation conditions were varied substantially in order to create oxygen deficiency in hafnium oxide films intentionally. The films were characterized by X-ray and magnetic measurements. X-ray diffraction studies show an increase in lattice parameter with increasing oxygen deficiency. Oxygen deficient hafnium oxide thin films also showed a decreasing bandgap with increase in oxygen deficiency. The magnetisation studies carried out with SQUID did not show any sign of ferromagnetism in the whole oxygen deficiency range. X-ray magnetic circular dichroism measurements also confirmed the absence of ferromagnetism in oxygen deficient hafnium oxide thin films.

  3. Optimisation study of the synthesis of vanadium oxide nanostructures using pulsed laser deposition

    CSIR Research Space (South Africa)

    Masina, BN

    2014-02-01

    Full Text Available produced aluminium plasma” J. Phys. D.: Appl. Phys. 35, 2935 – 2938 (2002). [16] Geohegan D.B., “Physics and diagnostics of laser plume propagation for high Tc superconductor film growth” Thin Solid Films 220, 138 – 145 (1992). [17] Wood R.F., Leboeuf J...

  4. Fabrication of polypyrrole/vanadium oxide nanotube composite with enhanced electrochemical performance as cathode in rechargeable batteries

    International Nuclear Information System (INIS)

    Zhou, Xiaowei; Chen, Xu; He, Taoling; Bi, Qinsong; Sun, Li; Liu, Zhu

    2017-01-01

    Highlights: • VO_xNTs were hydrothermally prepared using C_1_2H_2_7N as soft template with scalability. • Polypyrrole/VO_xNTs with less C_1_2H_2_7N template and higher conductivity were obtained. • Polypyrrole/VO_xNTs exhibit better performance as cathode for LIBs compared to VO_xNTs. • Further modification to VO_xNTs with desired electrochemical property can be expected. - Abstract: Vanadium oxide nanotubes (VO_xNTs) with hollow as well as multi-walled features were fabricated under hydrothermal condition by soft-template method. This novel VO_xNTs can be used as cathode material for lithium ion batteries (LIBs), but displaying low specific capacity and poor cycling performance owing to the residual of a mass of soft-template (C_1_2H_2_7N) and intrinsic low conductivity of VO_x. Cation exchange technique and oxidative polymerization process of pyrrole monomers were conducted to wipe off partial soft-template without electrochemical activity within VO_xNTs and simultaneously form polypyrrole coating on VO_xNTs, respectively. The resulting polypyrrole/VO_xNTs nanocomposite delivers much improved capacity and cyclic stability. Further optimizations, such as complete elimination of organic template and enhancing the crystallinity, can make this unique nanostructure a promising cathode for LIBs.

  5. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José ; Burriel, Mó nica

    2010-01-01

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation

  6. Sol-gel growth of vanadium dioxide

    International Nuclear Information System (INIS)

    Speck, K.R.

    1990-01-01

    This thesis examines the chemical reactivity of vanadium (IV) tetrakis(t-butoxide) as a precursor for the sol-gel synthesis of vanadium dioxide. Hydrolysis and condensation of the alkoxide was studied by FTIR spectroscopy. Chemical modification of the vanadium tetraalkoxide by alcohol interchange was studied using 51 V NMR and FTIR. Vanadium dioxide thin films and powders were made from vanadium tetrakis(t-butoxide) by standard sol-gel techniques. Post-deposition heating under nitrogen was necessary to transform amorphous gels into vanadium dioxide. Crystallization of films and powders was studied by FTIR, DSC, TGA, and XRD. Gel-derived vanadium dioxide films undergo a reversible semiconductor-to-metal phase transition near 68C, exhibiting characteristic resistive and spectral changes. The electrical resistance decreased by two to three orders of magnitude and the infrared transmission sharply dropped as the material was cycled through this thermally induced phase transition. The sol-gel method was also used to make doped vanadium dioxide films. Films were doped with tungsten and molybdenum ions to effectively lower the temperature at which the transition occurs

  7. Synthesis of organometallic hydroxides of titanium, vanadium, cobalt and chromium as precursors of thin films type MaOb

    International Nuclear Information System (INIS)

    Montero Villalobos, Mavis

    2001-01-01

    This study shows the results obtained from a general objective that was the synthesis and characterization of precursors of thin films of metallic oxides, two different routes of synthesis have been practiced: route molecular precursors and route Sol-Gel technic. In the first route one of the objectives of the investigation is to obtain a molecular precursor of material type M a O b a route of synthesis have been tried proved that involves anhydrous chlorides of the transition metals and linked R that are alcoxides of metal such as silicon, titanium and zirconium. In the second route the general objective to create thin films of metallic oxide has been maintained but the way to resolve the problem has changed, not giving so much emphasis to the molecular precursors as it was originally presented (this due mainly to its instability and difficulty of synthesis), but being supported in the sun-gel chemistry. It was started a new synthesis line through the sun-gel chemistry that is more versatile and simplifies the process in the film formation [es

  8. Vanadium - 1977

    International Nuclear Information System (INIS)

    Broderick, G.N.

    1977-01-01

    This report, with pertinent references, is a comprehensive description and analysis of the vanadium industry. Included is information on industry structure, size and organization; definitions, grades, and specifications; reserves and resources; geology; production and capacity; uses; technology; byproducts and coproducts; strategic considerations; economic and operating factors and problems; supply-demand relationships; and forecasts of supply and demand. Vanadium is used principally as an alloy in steel. Other important uses are in titanium alloys and in various chemical catalytic processes. The world supply of vanadium is sufficient to last far beyond the year 2000 at the present and projected rates of consumption. Almost all of the resources will economically yield vanadium only in conjunction with a coproduct

  9. Selective nano alumina supported vanadium oxide catalysts for oxidative dehydrogenation of ethylbenzene to styrene using CO2 as soft oxidant

    Directory of Open Access Journals (Sweden)

    A.M. Elfadly

    2013-12-01

    Full Text Available Nano alumina-supported V2O5 catalysts with different loadings have been tested for the dehydrogenation of ethylbenzene with CO2 as an oxidant. High surface area nano-alumina was prepared and used as support for V2O5 as the catalyst. The catalysts were synthesized by impregnation techniques followed by calcinations and microwave treatment, denoted as V2O5/γ-Al2O3-C and V2O5/γ-Al2O3-MW, respectively. The V2O5 loading was varied on nano-alumina from 5 to 30 wt%. The support and catalysts were characterized by X-ray diffraction (XRD, Barett–Joyner–Halenda (BJH pore-size distribution, N2-adsorption isotherms, Fourier transform infrared (FT-IR, scanning electron microscopy (SEM, transmission electron microscopy (TEM and temperature programed desorption (TPD-NH3. The characterization results indicated that V2O5 is highly dispersed on alumina up to 30%-V2O5/γ-Al2O3-MW prepared by MW method. The TPD studies indicated that there are significant differences in acid amount and strength for V2O5/γ-Al2O3-C and V2O5/γ-Al2O3-MW-catalysts. The catalytic activity of the prepared catalysts was evaluated in the temperature range 450–600 °C in relation to the physicochemical properties and surface acidity. The results revealed that optimum catalytic activity and selectivity (∼100% toward styrene production were obtained using 10% V2O5/γ-Al2O3-MW catalyst treated with microwave.

  10. The ion dependent change in the mechanism of charge storage of chemically preintercalated bilayered vanadium oxide electrodes

    Science.gov (United States)

    Clites, Mallory; Pomerantseva, Ekaterina

    2017-08-01

    Chemical pre-intercalation is a soft chemistry synthesis approach that allows for the insertion of inorganic ions into the interlayer space of layered battery electrode materials prior to electrochemical cycling. Previously, we have demonstrated that chemical pre-intercalation of Na+ ions into the structure of bilayered vanadium oxide (δ-V2O5) results in record high initial capacities above 350 mAh g-1 in Na-ion cells. This performance is attributed to the expanded interlayer spacing and predefined diffusion pathways achieved by the insertion of charge-carrying ions. However, the effect of chemical pre-intercalation of δ-V2O5 has not been studied for other ion-based systems beyond sodium. In this work, we report the effect of the chemically preintercalated alkali ion size on the mechanism of charge storage of δ- MxV2O5 (M = Li, Na, K) in Li-ion, Na-ion, and K-ion batteries, respectively. The interlayer spacing of the δ-MxV2O5 varied depending on inserted ion, with 11.1 Å achieved for Li-preintercalated δ-V2O5, 11.4 Å for Na-preintercalated δ- V2O5, and 9.6 Å for K-preintercalated δ-V2O5. Electrochemical performance of each material has been studied in its respective ion-based system (δ-LixV2O5 in Li-ion cells, δ-NaxV2O5 in Na-ion cells, and δ-KxV2O5 in K-ion cells). All materials demonstrated high initial capacities above 200 mAh g-1. However, the mechanism of charge storage differed depending on the charge-carrying ion, with Li-ion cells demonstrating predominantly pseudocapacitive behavior and Naion and K-ion cells demonstrating a significant portion of capacity from diffusion-limited intercalation processes. In this study, the combination of increased ionic radii of the charge-carrying ions and decreased synthesized interlayer spacing of the bilayered vanadium oxide phase correlates to an increase in the portion of capacity attributed diffusion-limited charge-storage processes.

  11. VANADIUM ALLOYS

    Science.gov (United States)

    Smith, K.F.; Van Thyne, R.J.

    1959-05-12

    This patent deals with vanadium based ternary alloys useful as fuel element jackets. According to the invention the ternary vanadium alloys, prepared in an arc furnace, contain from 2.5 to 15% by weight titanium and from 0.5 to 10% by weight niobium. Characteristics of these alloys are good thermal conductivity, low neutron capture cross section, good corrosion resistance, good welding and fabricating properties, low expansion coefficient, and high strength.

  12. Enhancement of Photovoltaic Performance by Utilizing Readily Accessible Hole Transporting Layer of Vanadium(V) Oxide Hydrate in a Polymer-Fullerene Blend Solar Cell.

    Science.gov (United States)

    Jiang, Youyu; Xiao, Shengqiang; Xu, Biao; Zhan, Chun; Mai, Liqiang; Lu, Xinhui; You, Wei

    2016-05-11

    Herein, a successful application of V2O5·nH2O film as hole transporting layer (HTL) instead of PSS in polymer solar cells is demonstrated. The V2O5·nH2O layer was spin-coated from V2O5·nH2O sol made from melting-quenching sol-gel method by directly using vanadium oxide powder, which is readily accessible and cost-effective. V2O5·nH2O (n ≈ 1) HTL is found to have comparable work function and smooth surface to that of PSS. For the solar cell containing V2O5·nH2O HTL and the active layer of the blend of a novel polymer donor (PBDSe-DT2PyT) and the acceptor of PC71BM, the PCE was significantly improved to 5.87% with a 30% increase over 4.55% attained with PSS HTL. Incorporation of V2O5·nH2O as HTL in the polymer solar cell was found to enhance the crystallinity of the active layer, electron-blocking at the anode and the light-harvest in the wavelength range of 400-550 nm in the cell. V2O5·nH2O HTL improves the charge generation and collection and suppress the charge recombination within the PBDSe-DT2PyT:PC71BM solar cell, leading to a simultaneous enhancement in Voc, Jsc, and FF. The V2O5·nH2O HTL proposed in this work is envisioned to be of great potential to fabricate highly efficient PSCs with low-cost and massive production.

  13. Characterization of zirconium alloy oxidation films by alternating current impedance

    International Nuclear Information System (INIS)

    Rosecrans, P.M.

    1984-01-01

    Kinetics of zirconium alloy oxidation are highly nonlinear. The results of electrochemical measurements and electron microscopy support the existence of porosity in oxide films formed on zirconium alloys in high temperature aqueous environments. Analytical treatment is presented relating oxidation kinetics to the thickness and distribution of nonporous elements within the oxide. This analysis illustrates that both the level and distribution of porosity within the oxide factor into oxidation kinetics. The barrier layer model can provide a basis for predicting the effect of environmental changes on oxidation rate. In addition, it demonstrates the need for further research into porosity generation mechanisms in oxide films

  14. Characterization of zirconium alloy oxidation films by alternating current impedance

    International Nuclear Information System (INIS)

    Rosecrans, P.M.

    1983-11-01

    Kinetics of zirocnium alloy oxidation are highly nonlinear. The results of electrochemical measurements and electron microscopy support the existence of porosity in oxide films formed on zirconium alloys in high temperature aqueous environments. Analytical treatment is presented relating oxidation kinetics to the thickness and distribution of nonporous elements within the oxide. This analysis illustrates that both the level and distribution of porosity within the oxide factor into oxidation kinetics. The barrier layer model can provide a basis for predicting the effect of environmental changes on oxidation rate. In addition, it demonstrates the need for further research into porosity generation mechanisms in oxide films

  15. Characterization of ultrasonic spray pyrolysed ruthenium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Patil, P.S.; Ennaoui, E.A.; Lokhande, C.D.; Mueller, M.; Giersig, M.; Diesner, K.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

    1997-11-21

    The ultrasonic spray pyrolysis (USP) technique was employed to deposit ruthenium oxide thin films. The films were prepared at 190 C substrate temperature and further annealed at 350 C for 30 min in air. The films were 0.22 {mu} thick and black grey in color. The structural, compositional and optical properties of ruthenium oxide thin films are reported. Contactless transient photoconductivity measurement was carried out to calculate the decay time of excess charge carriers in ruthenium oxide thin films. (orig.) 28 refs.

  16. The mechanism of cysteine detection in biological media by means of vanadium oxide nanoparticles

    International Nuclear Information System (INIS)

    Bezerra, A. G.; Barison, A.; Oliveira, V. S.; Foti, L.; Krieger, M. A.; Dhalia, R.; Viana, I. F. T.; Schreiner, W. H.

    2012-01-01

    We report on the interaction of vanadate nanoparticles, produced using the laser ablation in liquids synthesis, with cysteine in biological molecules. Cysteine is a very important amino acid present in most proteins, but also because cysteine and the tripeptide glutathione are the main antioxidant molecules in our body system. Detailed UV–Vis absorption spectra and dynamic light scattering measurements were done to investigate the detection of cysteine in large biological molecules. The intervalence band of the optical absorption spectra shows capability for quantitative cysteine sensing in the μM range in biological macromolecules. Tests included cytoplasmic repetitive antigen and flagellar repetitive antigen proteins of the Trypanosoma cruzi protozoa, as well as the capsid p24 proteins from Human Immunodeficiency Virus type 1 and type 2. Detailed NMR measurements for hydrogen, carbon, and vanadium nuclei show that cysteine in contact with the vanadate looses hydrogen of the sulphydryl side chain, while the vanadate is reduced. The subsequent detachment of two deprotonated molecules to form cystine and the slow return to the vanadate complete the oxidation–reduction cycle. Therefore, the vanadate acts as a charge exchanging catalyst on cysteine to form cystine. The NMR results also indicate that the nanoparticles are not formed by the common orthorhombic V 2 O 5 form.

  17. The model of metal-insulator phase transition in vanadium oxide

    International Nuclear Information System (INIS)

    Vikhnin, V.S.; Lysenko, S.; Rua, A.; Fernandez, F.; Liu, H.

    2005-01-01

    Thermally induced metal-insulator phase transitions (PT) in VO 2 thin films are studied theoretically and experimentally. The hysteresis phenomena in the region of the transition for different type thin films were investigated. The phenomenological model of the PT is suggested. The charge transfer-lattice instability in VO 2 metallic phase is considered as basis of the first order metal-insulator PT in VO 2 . The charge transfer is treated as an order parameter

  18. Transparent conducting oxide films of group V doped titania prepared by aqueous chemical solution deposition

    International Nuclear Information System (INIS)

    Elen, Ken; Capon, Boris; De Dobbelaere, Christopher; Dewulf, Daan; Peys, Nick; Detavernier, Christophe; Hardy, An; Van Bael, Marlies K.

    2014-01-01

    Transparent conducting oxide (TCO) films of titania doped with vanadium (V), niobium (Nb) and tantalum (Ta) are obtained by aqueous Chemical Solution Deposition (CSD). The effect of the dopant on the crystallization and microstructure of the resulting films is examined by means of X-ray diffraction and electron microscopy. During annealing of the thin films, in-situ characterization of the crystal structure and sheet resistance is carried out. Niobium doped anatase films, obtained after annealing in forming gas, show a resistivity of 0,28 Ohm cm, which is the lowest resistivity reported for a solution deposited anatase-based TCO so far. Here, we demonstrate that aqueous CSD may provide a strategy for scalable TCO production in the future. - Highlights: • Aqueous chemical solution deposition of doped titanium dioxide • Doping delays the phase transition from anatase to rutile • Lowest resistivity after doping with niobium and annealing in Forming Gas • Transparency higher than 80% in the visible range of optical spectrum

  19. Transparent conducting oxide films of group V doped titania prepared by aqueous chemical solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Elen, Ken [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Strategisch Initiatief Materialen (SIM), SoPPoM Program (Belgium); Capon, Boris [Strategisch Initiatief Materialen (SIM), SoPPoM Programm (Belgium); Coating and Contacting of Nanostructures, Ghent University, Krijgslaan 281 S1, B-9000 Ghent (Belgium); De Dobbelaere, Christopher [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Dewulf, Daan [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Peys, Nick [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw, Kapeldreef 75, B-3001 Heverlee (Belgium); Detavernier, Christophe [Coating and Contacting of Nanostructures, Ghent University, Krijgslaan 281 S1, B-9000 Ghent (Belgium); Hardy, An [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Van Bael, Marlies K., E-mail: marlies.vanbael@uhasselt.be [Inorganic and Physical Chemistry, Institute for Materials Research, Hasselt University, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium)

    2014-03-31

    Transparent conducting oxide (TCO) films of titania doped with vanadium (V), niobium (Nb) and tantalum (Ta) are obtained by aqueous Chemical Solution Deposition (CSD). The effect of the dopant on the crystallization and microstructure of the resulting films is examined by means of X-ray diffraction and electron microscopy. During annealing of the thin films, in-situ characterization of the crystal structure and sheet resistance is carried out. Niobium doped anatase films, obtained after annealing in forming gas, show a resistivity of 0,28 Ohm cm, which is the lowest resistivity reported for a solution deposited anatase-based TCO so far. Here, we demonstrate that aqueous CSD may provide a strategy for scalable TCO production in the future. - Highlights: • Aqueous chemical solution deposition of doped titanium dioxide • Doping delays the phase transition from anatase to rutile • Lowest resistivity after doping with niobium and annealing in Forming Gas • Transparency higher than 80% in the visible range of optical spectrum.

  20. Vanadium and affective disorders

    International Nuclear Information System (INIS)

    Naylor, G.J.

    1985-01-01

    The oxidation reduction state of vanadium will influence its inhibitory effect, and it has been suggested that the control of this oxidation reduction could be a physiological means of controlling Na-K ATPase and hence membrane transport. However, there is no general agreement on this. For such a hypothesis to be true, tissue concentrations of vanadium would need to be sufficient to cause inhibition of Na-K ATPase. There has been considerable variation in the concentration of vanadium reported to be present in human blood and plasma - e.g., 8.4 μmoleliter, 0.11 μmoleliter, 0.04 μmoleliter and 0.0006-0.018 μmliter. Methods of assay have varied, even including enzymic methods, but the two major methods now used are neutron activation analysis and atomic absorption spectrophotometry using an electrical flameless atomizer. Using neutron activation analysis, difficulties arise from the short half-ife of V 52 (3.76 min) and for the need to separate Na 24 and Cl 36 from the sample since their radiation interfere with those from V 52 . Results from preirradiation separation agree well with those from atomic absorption spectrophotometry, but those from postirradiation separation are usually much lower. Though there is no agreement on the physiological role of vanadium there is evidence that it plays a part in the etiology of manic-depressive psychosis

  1. Micro-XANES measurements on experimental spinels and the oxidation state of vanadium in coexisting spinel and silicate melt

    International Nuclear Information System (INIS)

    Righter, K.; Sutton, S.R.; Newville, M.; Le, L.; Schwandt, C.S.

    2006-01-01

    We show that experimental spinels coexisting with silicate melt always have lower valence vanadium, and that spinels typically have 3+, whereas the coexisting melt has 4+ or 5+. Implications of these results for planetary basalts will be discussed. Spinel can be a significant host phase for V which has multiple oxidation states V 2+ , V 3+ , V 4+ or V 5+ at oxygen fugacities relevant to natural systems. The magnitude of D(V) spinel/melt is known to be a function of composition, temperature and fO 2 , but the uncertainty of the oxidation state under the range of natural conditions has made elusive a thorough understanding of D(V) spinel/melt. For example, V 3+ is likely to be stable in spinels, based on exchange with Al in experiments in the CaO-MgO-Al 2 O 3 -SiO 2 system. On the other hand, it has been argued that V 4+ will be stable across the range of natural oxygen fugacities in nature. In order to build on our previous work in more oxidized systems, we have carried out experiments at relatively reducing conditions from the FMQ buffer to 2 log fO 2 units below the IW buffer. These spinel-melt pairs, where V is present in the spinel at natural levels (∼300 ppm V), were analyzed using an electron microprobe at NASA-JSC and mi-cro-XANES at the Advanced Photon Source at Argonne National Laboratory. The new results will be used together with previous results to understand the valence of V in spinel-melt systems across 12 orders of magnitude of oxygen fugacity, and with application to natural systems.

  2. Study of the performance of vanadium based catalysts prepared by grafting in the oxidative dehydrogenation of propane

    Energy Technology Data Exchange (ETDEWEB)

    Santacesaria, E.; Carotenuto, G.; Tesser, R.; Di Serio, M. [Naples Univ. (Italy). Dept. of Chemistry

    2011-07-01

    The oxidative dehydrogenation (ODH) of propane has been investigated by using many different vanadia based catalysts, prepared by grafting technique and containing variable amounts of active phase supported on SiO{sub 2} previously coated, by grafting in three different steps, with multilayer of TiO{sub 2}. A depth catalytic screening, conducted in a temperature range of 400-600 C, at atmospheric pressure and in a range of residence time W/F=0.08-0.33 ghmol{sub -1}, has shown that the vanadium oxide catalysts on TiO{sub 2}-SiO{sub 2} support, prepared by grafting have good performances in the ODH of propane. In particular, a preliminary study has demonstrated that higher selectivities can be obtained employing catalysts having a well dispersed active phase that can be achieved with a V{sub 2}O{sub 5} content lower than 10%{sub w}t. It is well known that, in the case of redox catalysts, an increase of the selectivity can be achieved not only by using an adequate catalytic system but also via engineering routes like decoupling catalytic steps of reduction and re-oxidation. In fact it has been observed that by operating in dehydrogenating mode, on the same catalysts, a higher selectivity is obtained although the catalyst is poisoned by the formation of coke on the surface. As consequence of the results obtained in dehydrogenation, in this work has been explored the possibility to feed low amounts of oxygen, below the stoichiometric level with the aim to keep clean the surface from coke but maintaining high the selectivity, because, dehydrogenation reaction prevails. In this work, the behavior of catalysts containing different amounts of V2O5 has been studied in the propane-propene reaction by using different ratios C{sub 3}H{sub 8}/O{sub 2} included in the range 0-2. (orig.)

  3. Effect of plasma immersion on crystallinity of V2O5 film grown by dc reactive sputtering at room temperature

    International Nuclear Information System (INIS)

    Choi, Sun Hee; Kim, Joosun; Yoon, Young Soo

    2005-01-01

    Vanadium oxide thin films were grown at room temperature by direct current reactive sputtering. To investigate the effect of plasma immersion on the crystallinity of as-grown film, we immersed samples in plasma during the deposition process. X-ray diffraction (XRD) measurements show that as-deposited thin films immersed in plasma are crystalline, whereas those not immersed in the plasma are amorphous. Images taken with scanning electron microscopy show that the surface of films exposed to plasma have a different morphology to the surface of films not exposed to plasma. The Li-intercalation feature of as-deposited films immersed in plasma shows the typical behavior of crystalline vanadium oxide; such behavior is unsuitable for the cathode of thin film batteries (TFBs). These results indicate that direct current plasma promotes the growth of crystalline vanadium oxide films

  4. UV photodissociation spectroscopy of oxidized undecylenic acid films.

    Science.gov (United States)

    Gomez, Anthony L; Park, Jiho; Walser, Maggie L; Lin, Ao; Nizkorodov, Sergey A

    2006-03-16

    Oxidation of thin multilayered films of undecylenic (10-undecenoic) acid by gaseous ozone was investigated using a combination of spectroscopic and mass spectrometric techniques. The UV absorption spectrum of the oxidized undecylenic acid film is significantly red-shifted compared to that of the initial film. Photolysis of the oxidized film in the tropospheric actinic region (lambda > 295 nm) readily produces formaldehyde and formic acid as gas-phase products. Photodissociation action spectra of the oxidized film suggest that organic peroxides are responsible for the observed photochemical activity. The presence of peroxides is confirmed by mass-spectrometric analysis of the oxidized sample and an iodometric test. Significant polymerization resulting from secondary reactions of Criegee radicals during ozonolysis of the film is observed. The data strongly imply the importance of photochemistry in aging of atmospheric organic aerosol particles.

  5. Electrochromism of the electroless deposited cuprous oxide films

    International Nuclear Information System (INIS)

    Neskovska, R.; Ristova, M.; Velevska, J.; Ristov, M.

    2007-01-01

    Thin cuprous oxide films were prepared by a low cost, chemical deposition (electroless) method onto glass substrates pre-coated with fluorine doped tin oxide. The X-ray diffraction pattern confirmed the Cu 2 O composition of the films. Visible transmittance spectra of the cuprous oxide films were studied for the as-prepared, colored and bleached films. The cyclic voltammetry study showed that those films exhibited cathode coloring electrochromism, i.e. the films showed change of color from yellowish to black upon application of an electric field. The transmittance across the films for laser light of 670 nm was found to change due to the voltage change for about 50%. The coloration memory of those films was also studied during 6 h, ex-situ. The coloration efficiency at 670 nm was calculated to be 37 cm 2 /C

  6. Mixed phase titania nanocomposite codoped with metallic silver and vanadium oxide: New efficient photocatalyst for dye degradation

    Energy Technology Data Exchange (ETDEWEB)

    Yang Xia [School of Urban and Environmental Sciences, Northeast Normal University, Changchun 130024 (China); School of Chemistry, Northeast Normal University, Changchun 130024 (China); Ma Fengyan; Li Kexin; Guo Yingna; Hu Jianglei; Li Wei [School of Chemistry, Northeast Normal University, Changchun 130024 (China); Huo Mingxin [School of Urban and Environmental Sciences, Northeast Normal University, Changchun 130024 (China); Guo Yihang, E-mail: guoyh@nenu.edu.cn [School of Chemistry, Northeast Normal University, Changchun 130024 (China)

    2010-03-15

    Titania nanocomposite codoped with metallic silver and vanadium oxide was prepared by a one-step sol-gel-solvothermal method in the presence of a triblock copolymer surfactant (P123). The resulting Ag/V-TiO{sub 2} three-component junction system exhibited an anatase/rutile (weight ratio of 73.8:26.2) mixed phase structure, narrower band gap (2.25 eV), and extremely small particle sizes (ca. 12 nm) with metallic Ag particles well distributed on the surface of the composite. The Ag/V-TiO{sub 2} nanocomposite was used as the visible- and UV-light-driven photocatalyst to degrade dyes rhodamine B (RB) and coomassie brilliant blue G-250 (CBB) in an aqueous solution. At 1.8% Ag and 4.9% V doping, the Ag/V-TiO{sub 2} system exhibited the highest visible- as well as UV-light photocatalytic activity; additionally, the activity of the three-component system exceeded that of Degussa P25, pure TiO{sub 2}, single-doped TiO{sub 2} system (Ag/TiO{sub 2} or V-TiO{sub 2}) as well as P123-free-Ag/V-TiO{sub 2} codoped system. The reasons for this enhanced photocatalytic activity were revealed.

  7. Synthesis and characterization of self-bridged silver vanadium oxide/CNTs composite and its enhanced lithium storage performance.

    Science.gov (United States)

    Liang, Liying; Liu, Haimei; Yang, Wensheng

    2013-02-07

    The improvement of the electrochemical properties of electrode materials with large capacity and good capacity retention is becoming an important task in the field of lithium ion batteries (LIBs). We designed a function-oriented hybrid material consisting of silver vanadium oxide (β-AgVO(3)) nanowires modified with uniform Ag nanoparticles and multi-walled carbon nanotubes (CNTs) as a high-performance cathode material for LIBs. The Ag nanoparticles which precipitated automatically in the synthetic process act as a bridge between the β-AgVO(3) nanowires and CNTs, creating a self-bridged network structure. The Ag particles at the junction of the nanowires and CNTs facilitate electron transport from the CNTs to the nanowires, and thereby improve the electrical conductivity of the β-AgVO(3) nanowires and the composite. Moreover, the self-bridged network is hierarchically porous with a high surface area. When used as a cathode material, this composite electrode reveals high discharge capacities, excellent rate capability, and good cycling stability. The improved performance of the composite arises from its unique nanosized β-AgVO(3) nanowires with short diffusion pathway for lithium ions, efficient electron collection and transfer in the presence of Ag nanoparticles, together with excellent electrical conductivity of CNTs.

  8. Novel synthesis of manganese and vanadium mixed oxide (V2O5/OMS-2) as an efficient and selective catalyst for the oxidation of alcohols in liquid phase

    International Nuclear Information System (INIS)

    Mahdavi, Vahid; Soleimani, Shima

    2014-01-01

    Graphical abstract: Oxidation of various alcohols is studied in the liquid phase over new composite mixed oxide (V 2 O 5 /OMS-2) catalyst using tert-butyl hydroperoxide (TBHP). The activity of V 2 O 5 /OMS-2 samples was considerably increased with respect to OMS-2 catalyst and these samples are found to be suitable for the selective oxidation of alcohols. - Highlights: • V 2 O 5 /K-OMS-2 with different V/Mn molar ratios prepared by the impregnation method. • Oxidation of alcohols was studied in the liquid phase over V 2 O 5 /K-OMS-2 catalyst. • V 2 O 5 /K-OMS-2 catalyst had excellent activity for alcohol oxidation. • Benzyl alcohol oxidation using excess TBHP followed a pseudo-first order kinetic. • The selected catalyst was reused without significant loss of activity. - Abstract: This work reports the synthesis and characterization of mixed oxide vanadium–manganese V 2 O 5 /K-OMS-2 at various V/Mn molar ratios and prepared by the impregnation method. Characterization of these new composite materials was made by elemental analysis, BET, XRD, FT-IR, SEM and TEM techniques. Results of these analyses showed that vanadium impregnated samples contained mixed phases of cryptomelane and crystalline V 2 O 5 species. Oxidation of various alcohols was studied in the liquid phase over the V 2 O 5 /K-OMS-2 catalyst using tert-butyl hydroperoxide (TBHP) and H 2 O 2 as the oxidant. Activity of the V 2 O 5 /K-OMS-2 samples was increased considerably with respect to K-OMS-2 catalyst due to the interaction of manganese oxide and V 2 O 5 . The kinetic of benzyl alcohol oxidation using excess TBHP over V 2 O 5 /K-OMS-2 catalyst was investigated at different temperatures and a pseudo-first order reaction was determined with respect to benzyl alcohol. The effects of reaction time, oxidant/alcohol molar ratio, reaction temperature, solvents, catalyst recycling potential and leaching were investigated

  9. Hydrothermal synthesis of electrode materials pyrochlore tungsten trioxide film

    Science.gov (United States)

    Guo, Jingdong; Li, Yingjeng James; Stanley Whittingham, M.

    Hydrothermal synthesis methods have been successfully used to prepare new transition-metal oxides for cathodes in electrochemical devices such as lithium batteries and electrochromic windows. The tungsten oxides were the first studied, but the method has been extended to the oxides of molybdenum, vanadium and manganese. Sodium tungsten oxide films with the pyrochlore structure have been prepared on gold/alumina and indium-doped tin oxide substrates. These films reversibly and rapidly intercalate lithium and hydrogen ions.

  10. Novel acid-base hybrid membrane based on amine-functionalized reduced graphene oxide and sulfonated polyimide for vanadium redox flow battery

    International Nuclear Information System (INIS)

    Cao, Li; Sun, Qingqing; Gao, Yahui; Liu, Luntao; Shi, Haifeng

    2015-01-01

    A series of novel acid-base hybrid membranes (SPI/PEI-rGO) based on sulfonated polyimide (SPI) with polyethyleneimine-functionalized reduced graphene oxide (PEI-rGO) are prepared by a solution-casting method for vanadium redox flow battery (VRB). FT-IR and XPS results prove the successful fabrication of PEI-rGO and SPI/PEI-rGO hybrid membranes, which show a dense and homogeneous structure observed by SEM. The physicochemical properties such as water uptake, swelling ratio, ion exchange capacity, proton conductivity and vanadium ion permeability are well controlled by the incorporated PEI-rGO fillers. The interfacial-formed acid-base pairs between PEI-rGO and SPI matrix effectively reduce the swelling ratio and vanadium ion permeability, increasing the stability performance of the hybrid membranes. SPI/PEI-rGO-2 hybrid membrane exhibits a higher coulombic efficiency (CE, 95%) and energy efficiency (EE, 75.6%) at 40 mA cm −2 , as compared with Nafion 117 membrane (CE, 91% and EE, 66.8%). The self-discharge time of the VRB with SPI/PEI-rGO-2 hybrid membrane (80 h) is longer than that of Nafion 117 membrane (26 h), demonstrating the excellent blocking ability for vanadium ion. After 100 charge-discharge cycles, SPI/PEI-rGO-2 membrane exhibits the good stability under strong oxidizing and acid condition, proving that SPI/PEI-rGO acid-base hybrid membranes could be used as the promising candidates for VRB applications

  11. Fabrication of polypyrrole/vanadium oxide nanotube composite with enhanced electrochemical performance as cathode in rechargeable batteries

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Xiaowei, E-mail: zhouxiaowei@ynu.edu.cn [Department of Physics, School of Physics and Astronomy, Yunnan University, Kunming 650504, Yunnan (China); Chen, Xu; He, Taoling; Bi, Qinsong [Department of Physics, School of Physics and Astronomy, Yunnan University, Kunming 650504, Yunnan (China); Sun, Li [Department of Physics, School of Physics and Astronomy, Yunnan University, Kunming 650504, Yunnan (China); Department of Mechanical Engineering, University of Houston, Houston 77204, TX (United States); Liu, Zhu, E-mail: zhuliu@ynu.edu.cn [Department of Physics, School of Physics and Astronomy, Yunnan University, Kunming 650504, Yunnan (China); Yunnan Key Laboratory of Micro/Nano-Materials and Technology, Yunnan University, Kunming 650091, Yunnan (China)

    2017-05-31

    Highlights: • VO{sub x}NTs were hydrothermally prepared using C{sub 12}H{sub 27}N as soft template with scalability. • Polypyrrole/VO{sub x}NTs with less C{sub 12}H{sub 27}N template and higher conductivity were obtained. • Polypyrrole/VO{sub x}NTs exhibit better performance as cathode for LIBs compared to VO{sub x}NTs. • Further modification to VO{sub x}NTs with desired electrochemical property can be expected. - Abstract: Vanadium oxide nanotubes (VO{sub x}NTs) with hollow as well as multi-walled features were fabricated under hydrothermal condition by soft-template method. This novel VO{sub x}NTs can be used as cathode material for lithium ion batteries (LIBs), but displaying low specific capacity and poor cycling performance owing to the residual of a mass of soft-template (C{sub 12}H{sub 27}N) and intrinsic low conductivity of VO{sub x}. Cation exchange technique and oxidative polymerization process of pyrrole monomers were conducted to wipe off partial soft-template without electrochemical activity within VO{sub x}NTs and simultaneously form polypyrrole coating on VO{sub x}NTs, respectively. The resulting polypyrrole/VO{sub x}NTs nanocomposite delivers much improved capacity and cyclic stability. Further optimizations, such as complete elimination of organic template and enhancing the crystallinity, can make this unique nanostructure a promising cathode for LIBs.

  12. Growth and structure of Si and Ge in vanadium oxide nanomesh on Pd(1 1 1) studied by STM and DFT

    International Nuclear Information System (INIS)

    Chan, Lap Hong; Hayazaki, Shinji; Ogawa, Kokushi; Yuhara, Junji

    2013-01-01

    Highlights: ► We studied the growth and structure of Si and Ge in vanadium oxide nanomesh on Pd(1 1 1) by STM and DFT calculations. ► All the Si atoms formed isolated Si nanoclusters. ► Some Ge atoms formed monomer Ge nanodots on Pd(1 1 1), while the others formed isolated Ge nanoclusters. - Abstract: The growth of silicon (Si)/germanium (Ge) atoms in a well ordered (4 × 4) vanadium (V) oxide nanomesh on Pd(1 1 1) prepared by ultra-high-vacuum evaporation has been studied by scanning tunneling microscopy (STM) and ab initio density functional theory (DFT) calculations. At the very beginning of the Si deposition, all of the Si atoms deposited were adsorbed on top of the V-oxide nanomesh, forming Si nanoclusters, and each Si atom formed was isolated other Si atoms. Two different adsorption sites for Si atoms were observed by STM. In the case of Ge deposition, some Ge atoms filled the vanadium oxide nanoholes, forming Ge nanodots on Pd(1 1 1), while the others were adsorbed on top of the V-oxide nanomesh, forming isolated Ge nanoclusters. The ab initio DFT total-energy calculations indicated that the Ge atoms occupying the nanohole were more stable than those adsorbed on the nanomesh. The simulated images were highly consistent with the experimental STM images with the exception of the Ge nanodots, which exhibited a large, uniform protrusion in the STM images. Therefore, the adsorbed atom might be mobile in the nanohole at room temperature, possibly as a result of interaction with the STM tip.

  13. Formation of corrosion-resistant oxide film on uranium

    International Nuclear Information System (INIS)

    Petit, G.S.

    1976-01-01

    A vacuum heat-treatment method was developed for coating metallic uranium with an adherent protective film of uranium oxide. The film is prepared by vacuum heat-treating the metallic uranium at 625 0 C for 1 h while controlling the amount of oxygen being metered into the furnace. Uranium coupons with the protective film were exposed for several hundred hours in a corrosion test bath at 95 0 C and 100 percent RH without corroding. Film thicknesses ranging from 5 to 25 μm (0.0002 to 0.001 in.) were prepared and corrosion tested; the film thickness can be controlled to less than +-2.5 μm (+-0.0001 in.). The oxide film is hard, nonwetting, and very adherent. The resulting surface finish of the metal is equivalent to that of the original finish. The advantages of the oxide films over other protective coatings are given. 12 fig

  14. Oxidation-reduction phenomena in tabular uranium-vanadium bearing sandstone from the Salt Wash deposits (Upper Jurassic) of the Cottonwood Wash district (Utah, USA)

    International Nuclear Information System (INIS)

    Meunier, J.D.

    1984-02-01

    A braided to meandering fluvial environment has been postulated for this area after a sedimentological study. The mineralization is spatially related with conifer derived organic matter and wood is preserved in these sediments because of the reducing environment of deposition. The degree of maturation of the organic matter has been estimated from chemical analyses. Results show the presence of variable diagenetic oxidation depending on the environment. The organic matter which was least affected by this oxidation have attained a thermal maturation characteristic of the end stage of diagenesis. The high grade ore is situated at the edges of or within the trunks of trees (which remained permeable during diagenesis) and at the boundaries of the carbonaceous beds. Geochemical study shows there to be good correlation between uranium and vanadium. Uranium occurs as pitchblende, coffinite or as impregnations in the vanadiferous clay cement. A detailed study of clays shows an association of chlorite and roscoelite which most probably contain V 3+ . Fluid inclusion study suggests burying temperatures of >= 100 0 C and shows the existance of brines before the mineralization. The following genetical model is proposed. Low Eh uraniferous solutions move through a reduced pyritised environment. The low degree of oxidation of the pyrites propagates the destabilization of the clastic iron-titanium oxides which release vanadium and the dissociation of uranylcarbonates. Then, the deposit of pitchblende, coffinite, montroseite and vanadiferous clays took place in association with a secondary pyrite. When the rocks were uplifted to the subsurface, uranium (IV) and vanadium (III) were remobilised in an oxidising environment to form a secondary mineralization essentially represented by tyuyamunite [fr

  15. Melt quenched vanadium oxide embedded in graphene oxide sheets as composite electrodes for amperometric dopamine sensing and lithium ion battery applications

    Science.gov (United States)

    Sreejesh, M.; Shenoy, Sulakshana; Sridharan, Kishore; Kufian, D.; Arof, A. K.; Nagaraja, H. S.

    2017-07-01

    Electrochemical sensors and lithium-ion batteries are two important topics in electrochemistry that have attracted much attention owing to their extensive applications in enzyme-free biosensors and portable electronic devices. Herein, we report a simple hydrothermal approach for synthesizing composites of melt quenched vanadium oxide embedded on graphene oxide of equal proportion (MVGO50) for the fabrication of electrodes for nonenzymatic amperometic dopamine sensor and lithium-ion battery applications. The sensing performance of MVGO50 electrodes through chronoamperometry studies in 0.1 M PBS solution (at pH 7) over a wide range of dopamine concentration exhibited a highest sensitivity of 25.02 μA mM-1 cm-2 with the lowest detection limit of 0.07 μM. In addition, the selective sensing capability of MVGO50 was also tested through chronoamperometry studies by the addition of a very small concentration of dopamine (10 μM) in the presence of a fairly higher concentration of uric acid (10 mM) as the interfering species. Furthermore, the reversible lithium cycling properties of MVGO50 are evaluated by galvanostatic charge-discharge cycling studies. MVGO50 electrodes exhibited enhanced rate capacity of up to 200 mAhg-1 at a current of 0.1C rate and remained stable during cycling. These results indicate that MVGO composites are potential candidates for electrochemical device applications.

  16. Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition

    Directory of Open Access Journals (Sweden)

    Kenichi Miyazaki

    2016-05-01

    Full Text Available We investigated the effects of chromium (Cr and niobium (Nb co-doping on the temperature coefficient of resistance (TCR and the thermal hysteresis of the metal–insulator transition of vanadium dioxide (VO2 films. We determined the TCR and thermal-hysteresis-width diagram of the V1−x−yCrxNbyO2 films by electrical-transport measurements and we found that the doping conditions x ≳ y and x + y ≥ 0.1 are appropriate for simultaneously realizing a large TCR value and an absence of thermal hysteresis in the films. By using these findings, we developed a V0.90Cr0.06Nb0.04O2 film grown on a TiO2-buffered SiO2/Si substrate that showed practically no thermal hysteresis while retaining a large TCR of 11.9%/K. This study has potential applications in the development of VO2-based uncooled bolometers.

  17. Fundamental Studies of Butane Oxidation over Model-Supported Vanadium Oxide Catalysts: Molecular Structure-Reactivity Relationships

    NARCIS (Netherlands)

    Wachs, I.E.; Jehng, J.M.; Deo, G.; Weckhuysen, B.M.; Guliants, V.V.; Benziger, J.B.; Sundaresan, S.

    1997-01-01

    The oxidation of n-butane to maleic anhydride was investigated over a series of model-supported vanadia catalysts where the vanadia phase was present as a two-dimensional metal oxide overlayer on the different oxide supports (TiO2, ZrO2, CeO2, Nb2O5, Al2O3, and SiO2). No correlation was found

  18. Oxygen pressure manipulations on the metal-insulator transition characteristics of highly (011)-oriented vanadium dioxide films grown by magnetron sputtering

    International Nuclear Information System (INIS)

    Yu Qian; Li Wenwu; Duan Zhihua; Hu Zhigao; Chu Junhao; Liang Jiran; Chen Hongda; Liu Jian

    2013-01-01

    The metal-insulator transition behaviour of vanadium dioxide (VO 2 ) films grown at different oxygen pressures is investigated. With the aid of temperature-dependent electrical and infrared transmittance experiments, it is found that the transition temperature in the heating process goes up with increasing argon-oxygen ratio, whereas the one in the cooling process shows an inverse variation trend. It is found that the hysteresis width of the phase transition is narrowed at a lower argon-oxygen ratio because the defects introduced by excess oxygen lower the energy requirement of transformation. Furthermore, the defects reduce the forbidden gap of the VO 2 system due to the generation of a V 5+ ion. The present results are valuable for the achievement of VO 2 -based optoelectronic devices.

  19. Valence control of cobalt oxide thin films by annealing atmosphere

    International Nuclear Information System (INIS)

    Wang Shijing; Zhang Boping; Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping

    2011-01-01

    The cobalt oxide (CoO and Co 3 O 4 ) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH 3 OCH 2 CH 2 OH and Co(NO 3 ) 2 .6H 2 O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co 3 O 4 thin film was obtained by annealing in air at 300-600, and N 2 at 300, and transferred to CoO thin film by raising annealing temperature in N 2 . The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

  20. Vanadium oxide based cpd. useful as a cathode active material - is used in lithium or alkali metal batteries to prolong life cycles

    DEFF Research Database (Denmark)

    1997-01-01

    A mixt. of metallic iron particles and vanadium pentoxide contg. V in its pentavalent state in a liq. is reacted to convert at least some of the pentavalent V to its tetravalent state and form a gel. The liq. phase is then sepd. from the oxide based gel to obtain a solid material(I) comprising Fe......, V and oxygen where at least some of the V is in the tetravalent state. USE-(I) is a cathode active material in electric current producing storage cells. ADVANTAGE-Use of (I) in Li or alkali metal batteries gives prolonged life cycles.Storage cells using (I) have improved capacity during charge...

  1. Cuprous oxide thin films grown by hydrothermal electrochemical deposition technique

    International Nuclear Information System (INIS)

    Majumder, M.; Biswas, I.; Pujaru, S.; Chakraborty, A.K.

    2015-01-01

    Semiconducting cuprous oxide films were grown by a hydrothermal electro-deposition technique on metal (Cu) and glass (ITO) substrates between 60 °C and 100 °C. X-ray diffraction studies reveal the formation of cubic cuprous oxide films in different preferred orientations depending upon the deposition technique used. Film growth, uniformity, grain size, optical band gap and photoelectrochemical response were found to improve in the hydrothermal electrochemical deposition technique. - Highlights: • Cu 2 O thin films were grown on Cu and glass substrates. • Conventional and hydrothermal electrochemical deposition techniques were used. • Hydrothermal electrochemical growth showed improved morphology, thickness and optical band gap

  2. Vanadium dioxide formed by the sol-gel process

    International Nuclear Information System (INIS)

    Potember, R.S.; Speck, K.R.; Hu, H.S.

    1990-01-01

    This patent describes a process for the deposition of a crystalline vanadium dioxide thin film. It comprises: providing a solution comprising a vanadium tetraalkoxide and solvent; allowing hydrolysis and condensation reactions to progressively form a homogeneous sol from the solution, applying a coating of the sol to the substrate; allowing a gel to form from the sol on the substrate by evaporating the solvent; dehydrating the gel by heat treatment under an inert atmosphere to form the crystalline vanadium dioxide film

  3. Heterogeneous catalysis in liquid-phase oxidation of olefin--2. Dependence of the structure of vanadium-chromium binary oxide catalyst for oxidation of cyclohexene on the method of preparation

    Energy Technology Data Exchange (ETDEWEB)

    Takehira, K; Hayakawa, T; Ishikawa, T

    1978-01-01

    Dependence of the structure of vanadium-chromium binary oxide catalyst for oxidation of cyclohexene on the method of preparation was studied in an extension of previous work by using three series of binary oxide catalysts, D, E, and F, which were prepared by coprecipitation from acidic, neutral, and alkaline media, respectively. The specific activity at 60/sup 0/C, 1 atm oxygen, and benzene solvent decreased in the order D > E > F, but all three series showed maximum activity at 90% chromium. The selectivity for epoxide also followed the order D > E > F, but the maximum selectivity occurred at 50% chromium for D, 75% for E, and 90% for F. Comparison of these results with X-ray diffraction and ESR spectral structural analysis of the various chromium(III) vanadate phases supported the previously proposed mechanism, with cyclohexene autoxidation initiated by free radical decomposition of cyclohexene hydroperoxide occurring on a different type of active site.

  4. Topotactic synthesis of vanadium nitride solid foams

    International Nuclear Information System (INIS)

    Oyama, S.T.; Kapoor, R.; Oyama, H.T.; Hofmann, D.J.; Matijevic, E.

    1993-01-01

    Vanadium nitride has been synthesized with a surface area of 120 m 2 g -1 by temperature programmed nitridation of a foam-like vanadium oxide (35 m 2 g -1 ), precipitated from vanadate solutions. The nitridation reaction was established to be topotactic and pseudomorphous by x-ray powder diffraction and scanning electron microscopy. The crystallographic relationship between the nitride and oxide was {200}//{001}. The effect of precursor geometry on the product size and shape was investigated by employing vanadium oxide solids of different morphologies

  5. Photocatalytic properties of chemically grown vanadium oxide at 65 °C

    Energy Technology Data Exchange (ETDEWEB)

    Vernardou, D., E-mail: dimitra@iesl.forth.gr [Center of Materials Technology and Photonics, School of Applied Technology, Technological Educational Institute of Crete, 710 04 Heraklion, Crete (Greece); Science Department, School of Applied Technology, Technological Educational Institute of Crete, 710 04 Heraklion, Crete (Greece); Drosos, H.; Fasoulas, J. [Mechanical Engineering Department, School of Applied Technology, Technological Educational Institute of Crete, 710 04 Heraklion, Crete (Greece); Koudoumas, E. [Center of Materials Technology and Photonics, School of Applied Technology, Technological Educational Institute of Crete, 710 04 Heraklion, Crete (Greece); Electrical Engineering Department, School of Applied Technology, Technological Educational Institute of Crete, 710 04 Heraklion, Crete (Greece); Katsarakis, N. [Center of Materials Technology and Photonics, School of Applied Technology, Technological Educational Institute of Crete, 710 04 Heraklion, Crete (Greece); Science Department, School of Applied Technology, Technological Educational Institute of Crete, 710 04 Heraklion, Crete (Greece); Institute of Electronic Structure and Laser, Foundation for Research and Technology—Hellas, P.O. Box 1527, Vassilika Vouton, 711 10 Heraklion, Crete (Greece)

    2014-03-31

    In this paper, the photocatalytic response of amorphous V{sub 2}O{sub 5} coatings prepared by hydrothermal growth at 65 °C is presented. The position of the substrate during the deposition and the pH of the solution were found to affect the coverage and the response of the coatings upon catalysis. The photocatalytic activity of the coatings was tested using stearic acid as a pollutant for an illumination time of 480 min. The materials grown on microscope glass positioned at an angle of 0° with respect to the bottom of the bottle exhibit the best photocatalytic activity, degrading stearic acid by 64% due to the enhanced surface coverage. - Highlights: • Hydrothermally grown amorphous V{sub 2}O{sub 5} coatings at 65 °C • Their properties are dependent on the substrate arrangement. • Their photocatalytic activity is correlated with the oxide coverage.

  6. Photocatalytic properties of chemically grown vanadium oxide at 65 °C

    International Nuclear Information System (INIS)

    Vernardou, D.; Drosos, H.; Fasoulas, J.; Koudoumas, E.; Katsarakis, N.

    2014-01-01

    In this paper, the photocatalytic response of amorphous V 2 O 5 coatings prepared by hydrothermal growth at 65 °C is presented. The position of the substrate during the deposition and the pH of the solution were found to affect the coverage and the response of the coatings upon catalysis. The photocatalytic activity of the coatings was tested using stearic acid as a pollutant for an illumination time of 480 min. The materials grown on microscope glass positioned at an angle of 0° with respect to the bottom of the bottle exhibit the best photocatalytic activity, degrading stearic acid by 64% due to the enhanced surface coverage. - Highlights: • Hydrothermally grown amorphous V 2 O 5 coatings at 65 °C • Their properties are dependent on the substrate arrangement. • Their photocatalytic activity is correlated with the oxide coverage

  7. Development of vanadium-phosphate catalysts for methanol production by selective oxidation of methane

    Energy Technology Data Exchange (ETDEWEB)

    McCormick, R.L. [Colorado School of Mines, Golden, CO (United States)

    1995-12-31

    The United States has vast natural gas reserves which could contribute significantly to our energy security if economical technologies for conversion to liquid fuels and chemicals were developed. Many of these reserves are small scale or in remote locations and of little value unless they can be transported to consumers. Transportation is economically performed via pipeline, but this route is usually unavailable in remote locations. Another option is to convert the methane in the gas to liquid hydrocarbons, such as methanol, which can easily and economically be transported by truck. Therefore, the conversion of methane to liquid hydrocarbons has the potential to decrease our dependence upon oil imports by opening new markets for natural gas and increasing its use in the transportation and chemical sectors of the economy. In this project, we are attempting to develop, and explore new catalysts capable of direct oxidation of methane to methanol. The specific objectives of this work are discussed.

  8. Mild and selective vanadium-catalyzed oxidation of benzylic, allylic, and propargylic alcohols using air

    Science.gov (United States)

    Hanson, Susan Kloek; Silks, Louis A; Wu, Ruilian

    2013-08-27

    The invention concerns processes for oxidizing an alcohol to produce a carbonyl compound. The processes comprise contacting the alcohol with (i) a gaseous mixture comprising oxygen; and (ii) an amine compound in the presence of a catalyst, having the formula: ##STR00001## where each of R.sup.1-R.sup.12 are independently H, alkyl, aryl, CF.sub.3, halogen, OR.sup.13, SO.sub.3R.sup.14, C(O)R.sup.15, CONR.sup.16R.sup.17 or CO.sub.2R.sup.18; each of R.sup.13-R.sup.18 is independently alkyl or aryl; and Z is alkl or aryl.

  9. Oxidation of ruthenium thin films using atomic oxygen

    Energy Technology Data Exchange (ETDEWEB)

    McCoy, A.P.; Bogan, J.; Brady, A.; Hughes, G.

    2015-12-31

    In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (~ 3 nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO{sub 2} at exposures as low as ~ 10{sup 2} L at 575 K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO{sub 2}. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293 K (room temperature) in an atomic oxygen environment. - Highlights: • X-ray photoelectron spectroscopy study of the oxidation of Ru thin filmsOxidation of Ru thin films using atomic oxygen • Comparison between atomic oxygen and molecular oxygen treatments on Ru thin films • Fully oxidised RuO{sub 2} thin films formed with low exposures to atomic oxygen.

  10. Films based on oxidized starch and cellulose from barley.

    Science.gov (United States)

    El Halal, Shanise Lisie Mello; Colussi, Rosana; Deon, Vinícius Gonçalves; Pinto, Vânia Zanella; Villanova, Franciene Almeida; Carreño, Neftali Lenin Villarreal; Dias, Alvaro Renato Guerra; Zavareze, Elessandra da Rosa

    2015-11-20

    Starch and cellulose fibers were isolated from grains and the husk from barley, respectively. Biodegradable films of native starch or oxidized starches and glycerol with different concentrations of cellulose fibers (0%, 10% and 20%) were prepared. The films were characterized by morphological, mechanical, barrier, and thermal properties. Cellulose fibers isolated from the barley husk were obtained with 75% purity and high crystallinity. The morphology of the films of the oxidized starches, regardless of the fiber addition, was more homogeneous as compared to the film of the native starch. The addition of cellulose fibers in the films increased the tensile strength and decreased elongation. The water vapor permeability of the film of oxidized starch with 20% of cellulose fibers was lower than the without fibers. However the films with cellulose fibers had the highest decomposition with the initial temperature and thermal stability. The oxidized starch and cellulose fibers from barley have a good potential for use in packaging. The addition of cellulose fibers in starch films can contribute to the development of films more resistant that can be applied in food systems to maintain its integrity. Copyright © 2015 Elsevier Ltd. All rights reserved.

  11. Films of double oxides of zirconium and iron

    International Nuclear Information System (INIS)

    Kozik, V.V.; Borilo, L.P.; Shul'pekov, A.M.

    2000-01-01

    Films of double oxides of zirconium and iron were prepared by the method of precipitation from film-forming alcohol solutions of zirconium oxychloride and iron chloride with subsequent thermal treatment. Using the methods of X-ray phase and differential thermal analyses, conductometry and optical spectroscopy, basic chemical processes occurring in the film-forming solutions and during thermal treatment are studied alongside with phase composition and optical characteristics of the films prepared. The composition-property diagrams of the given system in a thin-film state are plotted [ru

  12. Growth of anodic oxide films on oxygen-containing niobium

    Energy Technology Data Exchange (ETDEWEB)

    Habazaki, H. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan)]. E-mail: habazaki@eng.hokudai.ac.jp; Ogasawara, T. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan); Konno, H. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan); Shimizu, K. [University Chemical Laboratory, Keio University, Yokohama 223-8522 (Japan); Asami, K. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Saito, K. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Nagata, S. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Skeldon, P. [Corrosion and Protection Centre, School of Materials, The University of Manchester, P.O. Box 88, Manchester M60 1QD (United Kingdom); Thompson, G.E. [Corrosion and Protection Centre, School of Materials, The University of Manchester, P.O. Box 88, Manchester M60 1QD (United Kingdom)

    2005-09-20

    The present study is directed at understanding of the influence of oxygen in the metal on anodic film growth on niobium, using sputter-deposited niobium containing from about 0-52 at.% oxygen, with anodizing carried out at high efficiency in phosphoric acid electrolyte. The findings reveal amorphous anodic niobia films, with no significant effect of oxygen on the field strength, transport numbers, mobility of impurity species and capacitance. However, since niobium is partially oxidized due to presence of oxygen in the substrate, less charge is required to form the films, hence reducing the time to reach a particular film thickness and anodizing voltage. Further, the relative thickness of film material formed at the metal/film interface is increased by the incorporation of oxygen species into the films from the substrate, with an associated altered depth of incorporation of phosphorus species into the films.

  13. Photoconductivity of oxidized nanostructured PbTe(In) films

    International Nuclear Information System (INIS)

    Dobrovolsky, A A; Ryabova, L I; Khokhlov, D R; Dashevsky, Z M; Kasiyan, V A

    2009-01-01

    Photoconductivity of as-grown and oxidized nanocrystalline PbTe(In) films has been studied in the dc and ac modes at temperatures 4.2–300 K. The electric transport in the films is defined by two mechanisms: conductivity through barriers at grain boundaries and transport along inversion channels at the grain surface. Modification of the transport mechanisms induced by oxidation is considered. Relatively weak oxidation results in an increase in the contribution of grain barriers to conductivity followed by an enhancement of the photoconductivity amplitude. Instead, this contribution drops in the case of deep oxidation resulting in a photoresponse reduction. It is shown that the main mechanism of charge transport in deeply oxidized films at low temperatures is hopping along inversion channels at the grain surface. It is demonstrated that the photoconductive response of nanocrystalline materials may be optimized by variation of the oxidation level, measurement frequency and temperature

  14. Aqueous vanadium ion dynamics relevant to bioinorganic chemistry: A review.

    Science.gov (United States)

    Kustin, Kenneth

    2015-06-01

    Aqueous solutions of the four highest vanadium oxidation states exhibit four diverse colors, which only hint at the diverse reactions that these ions can undergo. Cationic vanadium ions form complexes with ligands; anionic vanadium ions form complexes with ligands and self-react to form isopolyanions. All vanadium species undergo oxidation-reduction reactions. With a few exceptions, elucidation of the dynamics of these reactions awaited the development of fast reaction techniques before the kinetics of elementary ligation, condensation, reduction, and oxidation of the aqueous vanadium ions could be investigated. As the biological roles played by endogenous and therapeutic vanadium expand, it is appropriate to bring the results of the diverse kinetics studies under one umbrella. To achieve this goal this review presents a systematic examination of elementary aqueous vanadium ion dynamics. Copyright © 2014 Elsevier Inc. All rights reserved.

  15. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  16. Nanocomposite oxide thin films grown by pulsed energy beam deposition

    International Nuclear Information System (INIS)

    Nistor, M.; Petitmangin, A.; Hebert, C.; Seiler, W.

    2011-01-01

    Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

  17. Selective Oxidation Using Flame Aerosol Synthesized Iron and Vanadium-Doped Nano-TiO2

    Directory of Open Access Journals (Sweden)

    Zhong-Min Wang

    2011-01-01

    Full Text Available Selective photocatalytic oxidation of 1-phenyl ethanol to acetophenone using titanium dioxide (TiO2 raw and doped with Fe or V, prepared by flame aerosol deposition method, was investigated. The effects of metal doping on crystal phase and morphology of the synthesized nanostructured TiO2 were analyzed using XRD, TEM, Raman spectroscopy, and BET nitrogen adsorbed surface area measurement. The increase in the concentration of V and Fe reduced the crystalline structure and the anatase-to-rutile ratios of the synthesized TiO2. Synthesized TiO2 became fine amorphous powder as the Fe and V concentrations were increased to 3 and 5%, respectively. Doping V and Fe to TiO2 synthesized by the flame aerosol increased photocatalytic activity by 6 folds and 2.5 folds, respectively, compared to that of pure TiO2. It was found that an optimal doping concentration for Fe and V were 0.5% and 3%, respectively. The type and concentration of the metal dopants and the method used to add the dopant to the TiO2 are critical parameters for enhancing the activity of the resulting photocatalyst. The effects of solvents on the photocatalytic reaction were also investigated by using both water and acetonitrile as the reaction medium.

  18. Free standing graphene oxide film for hydrogen peroxide sensing

    Science.gov (United States)

    Ranjan, Pranay; Balakrishnan, Jayakumar; Thakur, Ajay D.

    2018-05-01

    We report hydrogen peroxide (H2O2)sensing using free standing graphene oxide thin films prepared using a cost effective scalable approach. Such sensors may find application in pharmaceutical and food processing industries.

  19. Chemical solution deposition of functional oxide thin films

    CERN Document Server

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  20. Multiferroic iron oxide thin films at room temperature

    Czech Academy of Sciences Publication Activity Database

    Gich, M.; Fina, I.; Morelli, Alessio; Sánchez, F.; Alexe, M.; Gazquez, J.; Fontcuberta, J.; Roig, A.

    2014-01-01

    Roč. 26, č. 27 (2014), s. 4645-4652 ISSN 0935-9648 Institutional support: RVO:68378271 Keywords : multiferroic * iron oxide * thin film Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 17.493, year: 2014

  1. Oxide film assisted dopant diffusion in silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Tin, Chin-Che, E-mail: cctin@physics.auburn.ed [Department of Physics, Auburn University, Alabama 36849 (United States); Mendis, Suwan [Department of Physics, Auburn University, Alabama 36849 (United States); Chew, Kerlit [Department of Electrical and Electronic Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Kuala Lumpur (Malaysia); Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin [Physical Technical Institute, Uzbek Academy of Sciences, 700084 Tashkent (Uzbekistan); Atabaev, Bakhtiyar [Institute of Electronics, Uzbek Academy of Sciences, 700125 Tashkent (Uzbekistan); Adedeji, Victor [Department of Chemistry, Geology and Physics, Elizabeth City State University, North Carolina 27909 (United States); Rusli [School of Electrical and Electronic Engineering, Nanyang Technological University (Singapore)

    2010-10-01

    A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

  2. Oxide film assisted dopant diffusion in silicon carbide

    International Nuclear Information System (INIS)

    Tin, Chin-Che; Mendis, Suwan; Chew, Kerlit; Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin; Atabaev, Bakhtiyar; Adedeji, Victor; Rusli

    2010-01-01

    A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

  3. Altering properties of cerium oxide thin films by Rh doping

    International Nuclear Information System (INIS)

    Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír

    2015-01-01

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO x thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO x thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce 4+ and Ce 3+ and rhodium occurs in two oxidation states, Rh 3+ and Rh n+ . We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO x thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO x thin films leads to preparing materials with different properties

  4. Vanadium based amorphous mixed oxides used as negative electrodes of lithium batteries; Oxydes mixtes amorphes a base de vanadium comme electrodes negatives de batteries au lithium

    Energy Technology Data Exchange (ETDEWEB)

    Guyomard, D.; Leroux, F.; Sigala, C.; Le Gal La Salle, A.; Piffard, Y. [Institut des Materiaux de Nantes, 44 (France). Laboratoire de Chimie des Solides

    1996-12-31

    This paper presents recent results concerning the chemical and electrochemical synthesis, the electrochemical properties and the characterization of two new families of amorphous oxides of formula Li{sub x}MVO{sub 4} (1oxides allows the low potential reversible insertion of lithium and can be used as negative electrodes in high performance lithium-ion batteries. (J.S.) 19 refs.

  5. Vanadium based amorphous mixed oxides used as negative electrodes of lithium batteries; Oxydes mixtes amorphes a base de vanadium comme electrodes negatives de batteries au lithium

    Energy Technology Data Exchange (ETDEWEB)

    Guyomard, D; Leroux, F; Sigala, C; Le Gal La Salle, A.; Piffard, Y [Institut des Materiaux de Nantes, 44 (France). Laboratoire de Chimie des Solides

    1997-12-31

    This paper presents recent results concerning the chemical and electrochemical synthesis, the electrochemical properties and the characterization of two new families of amorphous oxides of formula Li{sub x}MVO{sub 4} (1oxides allows the low potential reversible insertion of lithium and can be used as negative electrodes in high performance lithium-ion batteries. (J.S.) 19 refs.

  6. Lithium Storage in Microstructures of Amorphous Mixed-Valence Vanadium Oxide as Anode Materials.

    Science.gov (United States)

    Zhao, Di; Zheng, Lirong; Xiao, Ying; Wang, Xia; Cao, Minhua

    2015-07-08

    Constructing three-dimensional (3 D) nanostructures with excellent structural stability is an important approach for realizing high-rate capability and a high capacity of the electrode materials in lithium-ion batteries (LIBs). Herein, we report the synthesis of hydrangea-like amorphous mixed-valence VOx microspheres (a-VOx MSs) through a facile solvothermal method followed by controlled calcination. The resultant hydrangea-like a-VOx MSs are composed of intercrossed nanosheets and, thus, construct a 3 D network structure. Upon evaluation as an anode material for LIBs, the a-VOx MSs show excellent lithium-storage performance in terms of high capacity, good rate capability, and long-term stability upon extended cycling. Specifically, they exhibit very stable cycling behavior with a highly reversible capacity of 1050 mA h g(-1) at a rate of 0.1 A g(-1) after 140 cycles. They also show excellent rate capability, with a capacity of 390 mA h g(-1) at a rate as high as 10 A g(-1) . Detailed investigations on the morphological and structural changes of the a-VOx MSs upon cycling demonstrated that the a-VOx MSs went through modification of the local VO coordinations accompanied with the formation of a higher oxidation state of V, but still with an amorphous state throughout the whole discharge/charge process. Moreover, the a-VOx MSs can buffer huge volumetric changes during the insertion/extraction process, and at the same time they remain intact even after 200 cycles of the charge/discharge process. Thus, these microspheres may be a promising anode material for LIBs. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Multiferroicity in oxide thin films and heterostructures

    International Nuclear Information System (INIS)

    Glavic, Artur

    2012-01-01

    In this work a variety of different systems of transition metal oxides ABO 3 (perovskite materials, where B stands for a transition metal and A for a rare earth element) were produced as thin films and heterostructures and analyzed for the structural, magnetic and ferroelectric properties. For the epitaxial film preparation mostly pulse laser deposition (PLD) was applied. For one series high pressure oxide sputter deposition was used as well. The bulk multiferroics TbMnO 3 and DyMnO 3 , which develop their electric polarization due to a cycloidal magnetic order, have been prepared as single layers with thicknesses between 2 and 200 nm on YAlO 3 substrates using PLD and sputter deposition. The structural characterization of the surfaces and crystal structure where performed using X-ray reflectometry and diffraction, respectively. These yielded low surface roughness and good epitaxial growth. The magnetic behavior was macroscopically measured with SQUID magnetometry and microscopically with polarized neutron diffraction and resonant magnetic X-ray scattering. While all investigated samples showed antiferromagnetic order, comparable with the collinear magnetic phase of their bulk materials, only the sputter deposited samples exhibited the multiferroic low temperature cycloidal order. The investigation of the optical second harmonic generation in a TbMnO 3 sample could proof the presence of a ferroelectric order in the low temperature phase. The respective transition temperatures of the thin films have been very similar to those of the bulk materials. In contrast an increase in the rare earth ordering temperature has been observed, which reduces the Mn order slightly, an effect not known from bulk TbMnO 3 crystals. The coupling of the antiferromagnetic order in TbMnO 3 to ferromagnetic layers of LaCoO 3 was investigated in super-lattices containing 20 bilayers produced with PLD on the same substrates. The SQUID magnetometry yielded a strong influence of the

  8. Thin film ionic conductors based on cerium oxide

    International Nuclear Information System (INIS)

    Haridoss, P.; Hellstrom, E.; Garzon, F.H.; Brown, D.R.; Hawley, M.

    1994-01-01

    Fluorite and perovskite structure cerium oxide based ceramics are a class of materials that may exhibit good oxygen ion and/or protonic conductivity. The authors have successfully deposited thin films of these materials on a variety of substrates. Interesting orientation relationships were noticed between cerium oxide films and strontium titanate bi-crystal substrates. Near lattice site coincidence theory has been used to study these relationships

  9. Y-Ba-Cu-O superconducting film on oxidized silicon

    International Nuclear Information System (INIS)

    Gupta, R.P.; Khokle, W.S.; Dubey, R.C.; Singhal, S.; Nagpal, K.C.; Rao, G.S.T.; Jain, J.D.

    1988-01-01

    We report thick superconducting films of Y-Ba-Cu-O on oxidized silicon substrates. The critical temperatures for onset and zero resistance are 96 and 77 K, respectively. X-ray diffraction analysis predicts 1, 2, 3 composition and orthorhombic phase of the film

  10. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    NARCIS (Netherlands)

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Yakshin, Andrey; Bijkerk, Frederik

    2015-01-01

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO2 films were found to show Arrhenius behaviour. However, a

  11. Ellipsometric investigations of pyrolytically deposited thin indium oxide films

    International Nuclear Information System (INIS)

    Winkler, U.

    1980-01-01

    Ellipsometric measurements have been carried out of thin indium oxide films deposited pyrolytically on glass substrates. It was found that the roughness of the films affected the measuring results. Therefore, only after applying a two-layer model a reasonable interpretation of the measuring results became possible

  12. Synthesis and electrical characterization of Graphene Oxide films

    International Nuclear Information System (INIS)

    Yasin, Muhammad; Tauqeer, T.; Zaidi, Syed M.H.; San, Sait E.; Mahmood, Asad; Köse, Muhammet E.; Canimkurbey, Betul; Okutan, Mustafa

    2015-01-01

    In this work, we have synthesized Graphene Oxide (GO) using modified Hummers method and investigated its electrical properties using parallel plate impedance spectroscopic technique. Graphene Oxide films were prepared using drop casting method on Indium Tin Oxide (ITO) coated glass substrate. Atomic force microscopy was used to characterize the films' microstructure and surface topography. Electrical characterization was carried out using LCR meter in frequency regime (100 Hz to 10 MHz) at different temperatures. AC conductivity σ ac of the films was observed to be varied with angular frequency, ω as ω S , with S < 1. The electrical properties of GO were found to be both frequency and temperature dependent. Analysis showed that GO film contains direct current (DC) and Correlated Barrier Hopping (CBH) conductivity mechanisms at low and high frequency ranges, respectively. Photon absorption and transmittance capability in the visible range and excellent electrical parameters of solution processed Graphene Oxide suggest its suitability for the realization of low cost flexible organic solar cells and organic Thin Film Transistors, respectively. - Highlights: • Synthesize and electrical characterization of Graphene Oxide (GO) Film was undertaken. • Temperature dependent impedance spectroscopy was used for electrical analysis. • AFM was used to characterize films' microstructure and surface topography. • Electrical parameters were found to vary with both temperature and frequency. • GO showed DC and CBH conductivity mechanisms at low and high frequency, respectively

  13. Electrochemical investigations of ion-implanted oxide films

    International Nuclear Information System (INIS)

    Schultze, J.W.; Danzfuss, B.; Meyer, O.; Stimming, U.

    1985-01-01

    Oxide films (passive films) of 40-50 nm thickness were prepared by anodic polarization of hafnium and titanium electrodes up to 20 V. Multiple-energy ion implantation of palladium, iron and xenon was used in order to obtain modified films with constant concentration profiles of the implanted ions. Rutherford backscattering, X-ray photoelectron spectroscopy measurements and electrochemical charging curves prove the presence of implanted ions, but electrochemical and photoelectrochemical measurements indicate that the dominating effect of ion implantation is the disordering of the oxide film. The capacity of hafnium electrodes increases as a result of an increase in the dielectric constant D. For titanium the Schottky-Mott analysis shows that ion implantation causes an increase in D and the donor concentration N. Additional electronic states in the band gap which are created by the implantation improve the conductivity of the semiconducting or insulating films. This is seen in the enhancement of electron transfer reactions and its disappearance during repassivation and annealing. Energy changes in the band gap are derived from photoelectrochemical measurements; the absorption edge of hafnium oxide films decreases by approximately 2 eV because of ion implantation, but it stays almost constant for titanium oxide films. All changes in electrochemical behavior caused by ion implantation show little variation with the nature of the implanted ion. Hence the dominating effect seems to be a disordering of the oxide. (Auth.)

  14. Chitosan/graphene oxide biocomposite film from pencil rod

    Science.gov (United States)

    Gea, S.; Sari, J. N.; Bulan, R.; Piliang, A.; Amaturrahim, S. A.; Hutapea, Y. A.

    2018-03-01

    Graphene Oxide (GO) has been succesfully synthesized using Hummber method from graphite powder of pencil rod. The excellent solubility of graphene oxide (GO)in water imparts its feasibilty as new filler for reinforcement hydrophilic biopolymers. In this research, the biocomposite film was fabricated from chitosan/graphene oxide. The characteristics of graphene oxide were investigated using Fourier Transform Infrared (FT-IR) and X-ray Diffraction (XRD). The results of the XRD showed graphene structur in 2θ, appeared at 9.0715°with interlayer spacing was about 9.74063Å. Preparation films with several variations of chitosan/graphene oxide was done by casting method and characterized by mechanical and morphological analysis. The mechanical properties of the tensile test in the film show that the film CS/GO (85: 15)% has the optimum Young’s modulus size of 2.9 GPa compared to other variations of CS / GO film. Morphological analysis film CS/GO (85:15)% by Scanning Electron Microscopy (SEM), the obtained biocomposites film showed fine dispersion of GO in the CS matrix and could mix each other homogeneously.

  15. Study of film graphene/graphene oxide obtained by partial reduction chemical of oxide graphite

    International Nuclear Information System (INIS)

    Gascho, J.L.S.; Costa, S.F.; Hoepfner, J.C.; Pezzin, S.H.

    2014-01-01

    This study investigated the morphology of graphene/graphene oxide film obtained by partial chemical reduction of graphite oxide (OG) as well as its resistance to solvents. Films of graphene/graphene oxide are great candidates for replacement of indium oxide doped with tin (ITO) in photoelectric devices. The OG was obtained from natural graphite, by Hummer's method modified, and its reduction is made by using sodium borohydride. Infrared spectroscopy analysis of Fourier transform (FTIR), Xray diffraction (XRD) and scanning electron microscopy, high-resolution (SEM/FEG) for the characterization of graphene/graphene oxide film obtained were performed. This film proved to be resilient, not dispersing in any of the various tested solvents (such as ethanol, acetone and THF), even under tip sonication, this resistance being an important property for the applications. Furthermore, the film had a morphology similar to that obtained by other preparation methods.(author)

  16. Unidirectional oxide hetero-interface thin-film diode

    International Nuclear Information System (INIS)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

    2015-01-01

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10 5 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10 2  Hz < f < 10 6  Hz, providing a high feasibility for practical applications

  17. Unidirectional oxide hetero-interface thin-film diode

    Energy Technology Data Exchange (ETDEWEB)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Youn Sang, E-mail: younskim@snu.ac.kr [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Advanced Institute of Convergence Technology, Gyeonggi-do 443-270 (Korea, Republic of)

    2015-10-05

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

  18. Color and vanadium valency in V-doped ZrO2

    International Nuclear Information System (INIS)

    Ren, Feng; Ishida, Shingo; Takeuchi, Nobuyuki

    1993-01-01

    The distribution and chemical states of vanadium in V-doped ZrO 2 were studied to clarify the origin of the color of vanadium-zirconium yellow pigment in comparison with vanadium-tin yellow pigment. ESCA data and measurements of lattice constants of V-doped ZrO 2 revealed that vanadium was dissolved mainly as V 4+ substituting for Zr in ZrO 2 lattice, and its solubility limit was 0.5 wt% as V 2 O 5 . It was found that the yellow color of vanadium-zirconium yellow was produced predominantly by the dissolved vanadium and that the contribution of vanadium oxide on ZrO 2 grains to the yellow color was about 1.30 of that of the dissolved vanadium when compared on the basis of equimolar quantity of vanadium. Most of the undissolved vanadium oxide was in an amorphous or a poorly crystallized state

  19. Significance of porous structure on degradatin of 2 2' dichloro diethyl sulphide and 2 chloroethyl ethyl sulphide on the surface of vanadium oxide nanostructure

    International Nuclear Information System (INIS)

    Singh, Beer; Mahato, T.H.; Srivastava, A.K.; Prasad, G.K.; Ganesan, K.; Vijayaraghavan, R.; Jain, Rajeev

    2011-01-01

    Degradation of the king of chemical warfare agent, 2 2' dichloro diethyl sulphide (HD), and its simulant 2 chloroethyl ethyl sulphide (CEES) were investigated on the surface of porous vanadium oxide nanotubes at room temperature (30 ± 2 ° C ). Reaction kinetics was monitored by GC-FID technique and the reaction products were characterized by GC-MS. Data indicates that HD degraded faster relative to CEES inside the solid decontaminant compared to the reported liquid phase degradation of CEES and HD. Data explores the role of hydrolysis, elimination and oxidation reactions in the detoxification of HD and CEES and the first order rate constant and t 1/2 were calculated to be 0.026 h -1 , 26.6 h for CEES and 0.052 h -1 , 13.24 h for HD. In this report faster degradation of HD compared to CEES was explained on the basis of porous structure.

  20. Elucidation of the electrochromic mechanism of nanostructured iron oxides films

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Lobato, M.A.; Martinez, Arturo I.; Castro-Roman, M. [Center for Research and Advanced Studies of the National Polytechnic Institute, Cinvestav Campus Saltillo, Carr. Saltillo-Monterrey Km. 13, Ramos Arizpe, Coah. 25900 (Mexico); Perry, Dale L. [Mail Stop 70A1150, Lawrence Berkeley National Laboratory, University of California, Berkeley, CA 94720 (United States); Zarate, R.A. [Departamento de Fisica, Facultad de Ciencias, Universidad Catolica del Norte, Casilla 1280, Antofagasta (Chile); Escobar-Alarcon, L. (Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico)

    2011-02-15

    Nanostructured hematite thin films were electrochemically cycled in an aqueous solution of LiOH. Through optical, structural, morphological, and magnetic measurements, the coloration mechanism of electrochromic iron oxide thin films was elucidated. The conditions for double or single electrochromic behavior are given in this work. During the electrochemical cycling, it was found that topotactic transformations of hexagonal crystal structures are favored; i.e. {alpha}-Fe{sub 2}O{sub 3} to Fe(OH){sub 2} and subsequently to {delta}-FeOOH. These topotactic redox reactions are responsible for color changes of iron oxide films. (author)

  1. Photoinduced hydrophobic surface of graphene oxide thin films

    International Nuclear Information System (INIS)

    Zhang Xiaoyan; Song Peng; Cui Xiaoli

    2012-01-01

    Graphene oxide (GO) thin films were deposited on transparent conducting oxide substrates and glass slides by spin coating method at room temperature. The wettability of GO thin films before and after ultraviolet (UV) irradiation was characterized with water contact angles, which increased from 27.3° to 57.6° after 3 h of irradiation, indicating a photo-induced hydrophobic surface. The UV–vis absorption spectra, Raman spectroscopy, X-ray photoelectron spectroscopy, and conductivity measurements of GO films before and after UV irradiation were taken to study the mechanism of photoinduced hydrophobic surface of GO thin films. It is demonstrated that the photoinduced hydrophobic surface is ascribed to the elimination of oxygen-containing functional groups on GO molecules. This work provides a simple strategy to control the wettability properties of GO thin films by UV irradiation. - Highlights: ► Photoinduced hydrophobic surface of graphene oxide thin films has been demonstrated. ► Elimination of oxygen-containing functional groups in graphene oxide achieved by UV irradiation. ► We provide novel strategy to control surface wettability of GO thin films by UV irradiation.

  2. Solid-to-solid oxidation of a vanadium(IV) to a vanadium(V) compound: chemisty of a sulfur-containing siderophore.

    Science.gov (United States)

    Chatterjee, Pabitra B; Crans, Debbie C

    2012-09-03

    Visible light facilitates a solid-to-solid photochemical aerobic oxidation of a hunter-green microcrystalline oxidovanadium(IV) compound (1) to form a black powder of cis-dioxidovanadium(V) (2) at ambient temperature. The siderophore ligand pyridine-2,6-bis(thiocarboxylic acid), H(2)L, is secreted by a microorganism from the Pseudomonas genus. This irreversible transformation of a metal monooxo to a metal dioxo complex in the solid state in the absence of solvent is unprecedented. It serves as a proof-of-concept reaction for green chemistry occurring in solid matrixes.

  3. Synthesis and characterization of zinc oxide thin films prepared by ...

    African Journals Online (AJOL)

    Zinc oxide thin films were prepared with ammonia/ammonium chloride buffer as the reaction moderating agent in the chemical bath deposition technique. An observable color change during the reaction due to variations in the reactants concentration indicated the existence of the cupric (CuO) and cuprous (Cu2O) oxides ...

  4. Synthesis and characterization of thermally oxidized ZnO films

    Indian Academy of Sciences (India)

    Administrator

    Synthesis and characterization of thermally oxidized ZnO films. A P RAMBU1,* and N IFTIMIE2 .... R. −. Δ. = = (1) where Ra is the sensor resistance in the air and Rg is the .... ple, Aida and coworkers (2006) reported that the total oxidation is ...

  5. Comparison of Elemental Mercury Oxidation Across Vanadium and Cerium Based Catalysts in Coal Combustion Flue Gas: Catalytic Performances and Particulate Matter Effects.

    Science.gov (United States)

    Wan, Qi; Yao, Qiang; Duan, Lei; Li, Xinghua; Zhang, Lei; Hao, Jiming

    2018-03-06

    This paper discussed the field test results of mercury oxidation activities over vanadium and cerium based catalysts in both coal-fired circulating fluidized bed boiler (CFBB) and chain grate boiler (CGB) flue gases. The characterizations of the catalysts and effects of flue gas components, specifically the particulate matter (PM) species, were also discussed. The catalytic performance results indicated that both catalysts exhibited mercury oxidation preference in CGB flue gas rather than in CFBB flue gas. Flue gas component studies before and after dust removal equipment implied that the mercury oxidation was well related to PM, together with gaseous components such as NO, SO 2 , and NH 3 . Further investigations demonstrated a negative PM concentration-induced effect on the mercury oxidation activity in the flue gases before the dust removal, which was attributed to the surface coverage by the large amount of PM. In addition, the PM concentrations in the flue gases after the dust removal failed in determining the mercury oxidation efficiency, wherein the presence of different chemical species in PM, such as elemental carbon (EC), organic carbon (OC) and alkali (earth) metals (Na, Mg, K, and Ca) in the flue gases dominated the catalytic oxidation of mercury.

  6. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Coloma Ribera, R., E-mail: r.colomaribera@utwente.nl; Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F. [MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

    2015-08-07

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO{sub 2} films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

  7. Topological properties and functionalities in oxide thin films and interfaces

    Science.gov (United States)

    Uchida, Masaki; Kawasaki, Masashi

    2018-04-01

    As symbolized by the Nobel Prize in Physics 2016, ‘topology’ has been recognized as an essential standpoint to understand and control the physics of condensed matter. This concept may be spreading even into application areas such as novel electronics. In this trend, there has been reported a number of studies for oxide films and heterostructures with topologically non-trivial electronic or magnetic states. In this review, we overview the trends of new topological properties and functionalities in oxide materials by sorting out a number of examples. The technological advances in oxide film growth achieved over the last few decades are now opening the door for harnessing novel topological properties.

  8. Influence of structure of carrier (silica gel) on texture and catalytic properties of vanadium catalysts for sulfur dioxide oxidation

    International Nuclear Information System (INIS)

    Simonova, L.G.; Fenelonov, V.B.; Dzis'ko, V.A.; Noskova, S.P.; Kryukova, G.N.; Litvak, G.S.

    1982-01-01

    The influence of initial porous structure of a carrier-silica gel on texture and catalytic properties of vanadium catalysts is considered. It is shown that low thermal stability of the carrier results not only in considerable decrease of the catalyst surface during heat treatment but also in blocking part of active component in locked pores which accounts for the activity decrease in kinetic region and formation of active component forms that can not be extracted by acid

  9. Characterizations of photoconductivity of graphene oxide thin films

    Directory of Open Access Journals (Sweden)

    Shiang-Kuo Chang-Jian

    2012-06-01

    Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

  10. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    International Nuclear Information System (INIS)

    Lee, Ching-Ting; Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-01

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g m change, threshold voltage V T change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature

  11. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Ching-Ting, E-mail: ctlee@ee.ncku.edu.tw; Lin, Yung-Hao; Lin, Jhong-Ham [Institute of Microelectronics, Department of Electrical Engineering, Research Center for Energy Technology and Strategy (RCETS), National Cheng Kung University, Tainan, Taiwan (China)

    2015-01-28

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  12. VO2 Thermochromic Films on Quartz Glass Substrate Grown by RF-Plasma-Assisted Oxide Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Dong Zhang

    2017-03-01

    Full Text Available Vanadium dioxide (VO2 thermochromic thin films with various thicknesses were grown on quartz glass substrates by radio frequency (RF-plasma assisted oxide molecular beam epitaxy (O-MBE. The crystal structure, morphology and chemical stoichiometry were investigated systemically by X-ray diffraction (XRD, atomic force microscopy (AFM, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS analyses. An excellent reversible metal-to-insulator transition (MIT characteristics accompanied by an abrupt change in both electrical resistivity and optical infrared (IR transmittance was observed from the optimized sample. Remarkably, the transition temperature (TMIT deduced from the resistivity-temperature curve was reasonably consistent with that obtained from the temperature-dependent IR transmittance. Based on Raman measurement and XPS analyses, the observations were interpreted in terms of residual stresses and chemical stoichiometry. This achievement will be of great benefit for practical application of VO2-based smart windows.

  13. Electrochemical Oscillation of Vanadium Ions in Anolyte

    Directory of Open Access Journals (Sweden)

    Hao Peng

    2017-08-01

    Full Text Available Periodic electrochemical oscillation of the anolyte was reported for the first time in a simulated charging process of the vanadium redox flow batteries. The electrochemical oscillation could be explained in terms of the competition between the growth and the chemical dissolution of V2O5 film. Also, the oscillation phenomenon was possible to regular extra power consumption. The results of this paper might enable new methods to improve the charge efficiency and energy saving for vanadium redox flow batteries.

  14. Mineralogy and geochemistry of vanadium in the Colorado Plateau

    Science.gov (United States)

    Weeks, A.D.

    1961-01-01

    The chief domestic source of vanadium is uraniferous sandstone in the Colorado Plateau. Vanadium is 3-, 4-, or 5-valent in nature and, as oxides or combined with other elements, it forms more than 40 minerals in the Plateau ores. These ores have been studied with regard to the relative amounts of vanadium silicates and oxide-vanadates, uranium-vanadium ratios, the progressive oxidation of black low-valent ores to high-valent carnotite-type ores, and theories of origin. ?? 1961.

  15. Nuclear microanalysis of oxide films on structural steel

    International Nuclear Information System (INIS)

    Istomin, I.V.; Karabash, V.A.; Maisyukov, V.D.; Sosnin, A.N.; Shorin, V.S.

    1989-01-01

    Studies of the behavior of structural materials in nuclear power plants have indicated the important role of oxide films on metals, especially metals of the iron group. The films may be formed as a result of the corrosion of the metal in an aggressive coolant. At the same time, some oxide films have anticorrosive properties and can be produced specially by the introduction of inhibitor-passivators, e.g., molecular oxygen, into the aggressive medium. Experimental data on the film growth rate make it possible to determine the kinetics of the oxidation process, the nature of the diffusion of the main components through the film, and the role of the phase transitions (crystal-chemical transformations) and point defects during the migration of oxygen and metal ions through the oxide. In this study nuclear microanalysis is used to measure the parameters of oxide films formed on 10Cr2Mo and 1Cr18Ni10Ti steels in steam in the temperature range 320-620C. In this method the film parameters in the general analysis of the energy spectra of deuterons back-scattered from iron nuclei and protons in the case of the 16 O(d,p 1 ) 17 O nuclear reaction. With this approach and an initial deuteron energy E o = 0.9 MeV the range of the measurable thickness t of the films is 0.001-1.5 mg/cm 2 . The data obtained not only confirm the high sensitivity of the nuclear microanalysis method but also demonstrate that it can be used for nondestructive quality control of the surface

  16. SPH based modelling of oxide and oxide film formation in gravity die castings

    International Nuclear Information System (INIS)

    Ellingsen, K; M'Hamdi, M; Coudert, T

    2015-01-01

    Gravity die casting is an important casting process which has the capability of making complicated, high-integrity components for e.g. the automotive industry. Oxides and oxide films formed during filling affect the cast product quality. The Smoothed particle hydrodynamics (SPH) method is particularly suited to follow complex flows. The SPH method has been used to study filling of a gravity die including the formation and transport of oxides and oxide films for two different filling velocities. A low inlet velocity leads to a higher amount of oxides and oxide films in the casting. The study demonstrates the usefulness of the SPH method for an increased understanding of the effect of different filling procedures on the cast quality. (paper)

  17. Effects of insulating vanadium oxide composite in concomitant mixed phases via interface barrier modulations on the performance improvements in metal-insulator-metal diodes

    Directory of Open Access Journals (Sweden)

    Kaleem Abbas

    2018-03-01

    Full Text Available The performance of metal-insulator-metal diodes is investigated for insulating vanadium oxide (VOx composite composed of concomitant mixed phases using the Pt metal as the top and the bottom electrodes. Insulating VOx composite in the Pt/VOx/Pt diode exhibits a high asymmetry of 10 and a very high sensitivity of 2,135V−1 at 0.6 V. The VOx composite provides Schottky-like barriers at the interface, which controls the current flow and the trap-assisted conduction mechanism. Such dramatic enhancement in asymmetry and rectification performance at low applied bias may be ascribed to the dynamic control of the insulating and metallic phases in VOx composites. We find that the nanostructure details of the insulating VOx layer can be critical in enhancing the performance of MIM diodes.

  18. Vanadium Bioleaching Behavior by Acidithiobacillus ferrooxidans from a Vanadium-Bearing Shale

    Directory of Open Access Journals (Sweden)

    Dunpei Wei

    2018-01-01

    Full Text Available This study investigated bioleaching behavior of vanadium from a vanadium-bearing shale using Acidithiobacillus ferrooxidans (A. ferrooxidans. Results showed a maximum recovery of 62% vanadium in 1.2-day bioleaching, which was 22.45% higher than the controls. Then, the vanadium leaching efficiency decreased significantly, only 24% of that was obtained on the tenth day. The vanadium extraction in 1.2 days was mainly attributed to the dissolution of vanadium in free oxides of shale. Fe3+ produced by A. ferrooxidans promoted the dissolution process. X-ray diffraction (XRD patterns of the leached residues confirmed the generation of jarosite. SEM-EDS analysis of the residues indicated that jarosite adsorbed on the shale and inhibited the further dissolution of vanadium. The relevance of V, Fe, S, O was quite good in the energy disperse X-ray spectrometry (EDS element mapping of jarosite, and acid-washing of the jarosite resulted in 31.6% of the vanadium in the precipitates desorption, indicating that the decrease of vanadium leaching efficiency in bioleaching process was caused by both adsorption and co-precipitation with jarosite.

  19. In situ Oxidation of Ultrathin Silver Films on Ni(111)

    International Nuclear Information System (INIS)

    Meyer, A.; Flege, I.; Senanayake, S.; Kaemena, B.; Rettew, R.; Alamgir, F.; Falta, J.

    2011-01-01

    Oxidation of silver films of one- and two-monolayer thicknesses on the Ni(111) surface was investigated by low-energy electron microscopy at temperatures of 500 and 600 K. Additionally, intensity-voltage curves were measured in situ during oxidation to reveal the local film structure on a nanometer scale. At both temperatures, we find that exposure to molecular oxygen leads to the destabilization of the Ag film with subsequent relocation of the silver atoms to small few-layer-thick silver patches and concurrent evolution of NiO(111) regions. Subsequent exposure of the oxidized surface to ethylene initiates the transformation of bilayer islands back into monolayer islands, demonstrating at least partial reversibility of the silver relocation process at 600 K.

  20. A novel Graphene Oxide film: Synthesis and Dielectric properties

    Science.gov (United States)

    Canimkurbey, Betul; San, Sait Eren; Yasin, Muhammad; Köse, Muhammet Erkan

    In this work, we used Hummers method to synthesize Graphene Oxide (GO) and its parallel plate impedance spectroscopic technique to investigate dielectric properties. Graphene Oxide films were coated using drop casting method on ITO substrate. To analyze film morphology, atomic force microscopy was used. Dielectrics measurements of the samples were performed using impedance analyzer (HP-4194) in frequency range (100 Hz to 10MHz) at different temperatures. It was observed that the films' AC conductivity σac varied with angular frequency, ω as ωS, with Sdirect current (DC) and Correlated Barrier Hopping (CBH) conductivity mechanisms at low and high frequency ranges, respectively. Using solution processed Graphene Oxide will provide potential for organic electronic applications through its photon absorption and transmittance capability in the visible range and excellent electrical parameters.

  1. Ion beam analysis of PECVD silicon oxide thin films

    International Nuclear Information System (INIS)

    Fernandez-Lima, F.; Rodriguez, J.A.; Pedrero, E.; Fonseca Filho, H.D.; Llovera, A.; Riera, M.; Dominguez, C.; Behar, M.; Zawislak, F.C.

    2006-01-01

    A study of ion beam analysis techniques of plasma enhanced chemical vapor deposited (PECVD) silicon oxide thin films (1 μm thick) obtained from silane (SiH 4 ) and nitrous oxide (N 2 O) is reported. The film, elemental composition and surface morphology were determined as function of the reactant gas flow ratio, R = [N 2 O]/[SiH 4 ] in the 22-110 range using the Rutherford backscattering spectrometry, nuclear reaction analysis and atomic force microscopy techniques. The density of the films was determined by combining the RBS and thickness measurements. All the experiments were done at a deposition temperature of 300 deg. C. In all the cases almost stoichiometric oxides were obtained being the impurity content function of R. It was also observed that physical properties such as density, surface roughness and shape factor increase with R in the studied interval

  2. Quasi-one-dimensional nanostructured cobalt (Co) intercalated vanadium oxide (V{sub 2}O{sub 5}): Peroxovanadate sol gel synthesis and structural study

    Energy Technology Data Exchange (ETDEWEB)

    Langie da Silva, Douglas, E-mail: douglas.langie@ufpel.edu.br [Departamento de Física, Universidade Federal de Pelotas, Caixa Postal 354, Pelotas 96010-900 (Brazil); Moreira, Eduardo Ceretta [Laboratório de Espectroscopia, Universidade Federal do Pampa, Campus Bagé, Bagé 96400-970 (Brazil); Dias, Fábio Teixeira; Neves Vieira, Valdemar das [Departamento de Física, Universidade Federal de Pelotas, Caixa Postal 354, Pelotas 96010-900 (Brazil); Brandt, Iuri Stefani; Cas Viegas, Alexandre da; Pasa, André Avelino [Laboratório de Filmes Finos e Superfícies, Universidade Federal de Santa Catarina, Caixa Postal 476, Florianópolis 88.040-900 (Brazil)

    2015-01-15

    Nanostructured cobalt vanadium oxide (V{sub 2}O{sub 5}) xerogels spread onto crystalline Si substrates were synthesized via peroxovanadate sol gel route. The resulting products were characterized by distinct experimental techniques. The surface morphology and the nanostructure of xerogels correlate with Co concentration. The decrease of the structural coherence length is followed by the formation of a loose network of nanopores when the concentration of intercalated species was greater than 4 at% of Co. The efficiency of the synthesis route also drops with the increase of Co concentration. The interaction between the Co(OH{sub 2}){sub 6}{sup 2+} cations and the (H{sub 2}V{sub 10}O{sub 28}){sup 4−} anions during the synthesis was suggested as a possible explanation for the incomplete condensation of the V{sub 2}O{sub 5} gel. Finally the experimental results points for the intercalation of Co between the bilayers of the V{sub 2}O{sub 5}. In this scenario two possible preferential occupation sites for the metallic atoms in the framework of the xerogel were proposed. - Graphical abstract: Quasi-one-dimensional nanostructured cobalt (Co) intercalated vanadium oxide (V{sub 2}O{sub 5}) nanoribbons synthesized by peroxovanadate sol gel route. - Highlights: • Nanostructured cobalt V{sub 2}O{sub 5} gel spread onto c{sub S}i were synthesized via peroxovanadate sol gel route. • The micro and nanostructure correlates with the cobalt content. • The efficiency of the synthesis route shows to be also dependent of Co content. • The experimental results points for the intercalation of Co between the bilayers of the V{sub 2}O{sub 5} xerogel.

  3. Superlubricating graphene and graphene oxide films

    Science.gov (United States)

    Sumant, Anirudha V.; Erdemir, Ali; Choi, Junho; Berman, Diana

    2018-02-13

    A system and method for forming at least one of graphene and graphene oxide on a substrate and an opposed wear member. The system includes graphene and graphene oxide formed by an exfoliation process or solution processing method to dispose graphene and/or graphene oxide onto a substrate. The system further includes an opposing wear member disposed on another substrate and a gas atmosphere of an inert gas like N2, ambient, a humid atmosphere and a water solution.

  4. Nanostructured manganese oxide thin films as electrode material for supercapacitors

    Science.gov (United States)

    Xia, Hui; Lai, Man On; Lu, Li

    2011-01-01

    Electrochemical capacitors, also called supercapacitors, are alternative energy storage devices, particularly for applications requiring high power densities. Recently, manganese oxides have been extensively evaluated as electrode materials for supercapacitors due to their low cost, environmental benignity, and promising supercapacitive performance. In order to maximize the utilization of manganese oxides as the electrode material for the supercapacitors and improve their supercapacitive performance, the nanostructured manganese oxides have therefore been developed. This paper reviews the synthesis of the nanostructured manganese oxide thin films by different methods and the supercapacitive performance of different nanostructures.

  5. Properties of Spray Pyrolysied Copper Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2017-02-01

    Full Text Available Copper oxide (CuO thin films were deposited on well cleaned glass substrates by spray pyrolysis technique (SPT from cupric acetate (Cu(CH3COO2.H2O precursor solutions of 0.05 – 0.15 M molar concentrations (MC at a substrate temperature of 350 °C and at an air pressure of 1 bar. Effect of varying MC on the surface morphology, structural optical and electrical properties of CuO thin films were investigated. XRD patterns of the prepared films revealed the formation of CuO thin films having monoclinic structure with the main CuO (111 orientation and crystalline size ranging from 8.02 to 9.05 nm was observed. The optical transmission of the film was found to decrease with the increase of MC. The optical band gap of the thin films for 0.10 M was fond to be 1.60 eV. The room temperature electrical resistivity varies from 31 and 24 ohm.cm for the films grown with MC of 0.05 and 0.10 M respectively. The change in resistivity of the films was studied with respect to the change in temperature was shown that semiconductor nature is present. This information is expected to underlie the successful development of CuO films for solar windows and other semi-conductor applications including gas sensors.

  6. CuOX thin films by direct oxidation of Cu films deposited by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    D. Santos-Cruz

    Full Text Available Thin films of Cu2O and CuO oxides were developed by direct oxidation of physical vapor deposited copper films in an open atmosphere by varying the temperature in the range between 250 and 400 °C. In this work, the influence of oxidation temperature on structural, optical and electrical properties of copper oxide films has been discussed. The characterization results revealed that at lower temperatures (<300 °C, it is feasible to obtained coper (I oxide whereas at temperatures higher than 300 °C, the copper (II oxide is formed. The band gap is found to vary in between 1.54 and 2.21 eV depending on the oxidation temperature. Both oxides present p-type electrical conductivity. The carrier concentration has been increased as a function of the oxidation temperature from 1.61 × 1012 at 250 °C to 6.8 × 1012 cm−3 at 400 °C. The mobility has attained its maximum of 34.5 cm2 V−1 s−1 at a temperature of 300 °C, and a minimum of 13.8 cm2 V−1 s−1 for 400 °C. Finally, the resistivity of copper oxide films decreases as a function of oxidation temperature from 5.4 × 106 to 2.4 × 105 Ω-cm at 250 and 400 °C, respectively. Keywords: PVD, Oxidizing annealed treatment, Non-toxic material

  7. Preparation of molybdenum oxide thin films by MOCVD

    International Nuclear Information System (INIS)

    Guerrero, R. Martinez; Garcia, J.R. Vargas; Santes, V.; Gomez, E.

    2007-01-01

    In this study, molybdenum oxide films were prepared in a horizontal hot-wall MOCVD apparatus using molybdenum dioxide acetylacetonate as precursor. The molybdenum precursor was synthesized from acetylacetone and molybdenum oxide powder. Thermal gravimetric (TG) and differential thermal analyses (DTA) of the precursor suggested the formation of molybdenum oxides around 430 o C (703 K). Thus, a range of deposition temperatures varying from 350 to 630 o C (623-903 K) was explored to investigate the effects on the nature of the molybdenum oxide films. X-ray diffraction (XRD) results showed that the films consisted of α-MoO 3 phase at deposition temperatures ranging from 400 to 560 o C (673-833 K). Crystalline α-MoO 3 films can be obtained from molybdenum dioxide acetylacetonate precursor, without need of a post-annealing treatment. The best crystalline quality was found in films having needle-like crystallites grown at deposition temperature of about 560 o C (833 K), which exhibit a strong (0 1 0) preferred orientation and a transparent visual appearance

  8. Preparation of molybdenum oxide thin films by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Guerrero, R. Martinez [Depto. de Ingenieria Metalurgica, ESIQIE-IPN, Mexico 07300, D.F. (Mexico); Garcia, J.R. Vargas [Depto. de Ingenieria Metalurgica, ESIQIE-IPN, Mexico 07300, D.F. (Mexico)]. E-mail: rvargasga@ipn.mx; Santes, V. [CIIEMAD-IPN, Miguel Othon de Mendizabal 485, Mexico 07700, D.F. (Mexico); Gomez, E. [Instituto de Quimica-UNAM, Circuito Exterior-Ciudad Universitaria, Mexico 04510, D.F. (Mexico)

    2007-05-31

    In this study, molybdenum oxide films were prepared in a horizontal hot-wall MOCVD apparatus using molybdenum dioxide acetylacetonate as precursor. The molybdenum precursor was synthesized from acetylacetone and molybdenum oxide powder. Thermal gravimetric (TG) and differential thermal analyses (DTA) of the precursor suggested the formation of molybdenum oxides around 430 {sup o}C (703 K). Thus, a range of deposition temperatures varying from 350 to 630 {sup o}C (623-903 K) was explored to investigate the effects on the nature of the molybdenum oxide films. X-ray diffraction (XRD) results showed that the films consisted of {alpha}-MoO{sub 3} phase at deposition temperatures ranging from 400 to 560 {sup o}C (673-833 K). Crystalline {alpha}-MoO{sub 3} films can be obtained from molybdenum dioxide acetylacetonate precursor, without need of a post-annealing treatment. The best crystalline quality was found in films having needle-like crystallites grown at deposition temperature of about 560 {sup o}C (833 K), which exhibit a strong (0 1 0) preferred orientation and a transparent visual appearance.

  9. Spark counting technique with an aluminium oxide film

    International Nuclear Information System (INIS)

    Kawai, H.; Koga, T.; Morishima, H.; Niwa, T.; Nishiwaki, Y.

    1980-01-01

    Automatic spark counting of etch-pits on a polycarbonate film produced by nuclear fission fragments is now used for neutron monitoring in several countries. A method was developed using an aluminium oxide film instead of a polycarbonate as the neutron detector. Aluminium oxide films were prepared as follows: A cleaned aluminium plate as an anode and a nickel plate as a cathode were immersed in dilute sulfuric acid solution and electric current flowed between the electrodes at 12degC for 10-30 minutes. Electric current density was about 10 mA/cm 2 . The aluminium plate was then kept in boiling water for 10-30 minutes for sealing. The thickness of the aluminium oxide layer formed was about 1μm. The aluminium plate attached to a plate of suitable fissionable material, such as uranium or thorium, was irradiated with neutrons and set in a usual spark counter for fission track counting. One electrode was the aluminium plate and the other was an aluminized polyester sheet. Sparked pulses were counted with a usual scaler. The advantage of using spark counting with an aluminium oxide film for neutron monitoring is rapid measurement of neutron exposure, since chemical etching which is indispensable for spark counting with a polycarbonate detector film, is not needed. (H.K.)

  10. Valence control of cobalt oxide thin films by annealing atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Wang Shijing [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhang Boping, E-mail: bpzhang@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China)

    2011-02-01

    The cobalt oxide (CoO and Co{sub 3}O{sub 4}) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH{sub 3}OCH{sub 2}CH{sub 2}OH and Co(NO{sub 3}){sub 2}.6H{sub 2}O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co{sub 3}O{sub 4} thin film was obtained by annealing in air at 300-600, and N{sub 2} at 300, and transferred to CoO thin film by raising annealing temperature in N{sub 2}. The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

  11. Comparison of topotactic fluorination methods for complex oxide films

    Science.gov (United States)

    Moon, E. J.; Choquette, A. K.; Huon, A.; Kulesa, S. Z.; Barbash, D.; May, S. J.

    2015-06-01

    We have investigated the synthesis of SrFeO3-αFγ (α and γ ≤ 1) perovskite films using topotactic fluorination reactions utilizing poly(vinylidene fluoride) as a fluorine source. Two different fluorination methods, a spin-coating and a vapor transport approach, were performed on as-grown SrFeO2.5 films. We highlight differences in the structural, compositional, and optical properties of the oxyfluoride films obtained via the two methods, providing insight into how fluorination reactions can be used to modify electronic and optical behavior in complex oxide heterostructures.

  12. Comparison of topotactic fluorination methods for complex oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Moon, E. J., E-mail: em582@drexel.edu; Choquette, A. K.; Huon, A.; Kulesa, S. Z.; May, S. J., E-mail: smay@coe.drexel.edu [Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Barbash, D. [Centralized Research Facilities, Drexel University, Philadelphia, Pennsylvania 19104 (United States)

    2015-06-01

    We have investigated the synthesis of SrFeO{sub 3−α}F{sub γ} (α and γ ≤ 1) perovskite films using topotactic fluorination reactions utilizing poly(vinylidene fluoride) as a fluorine source. Two different fluorination methods, a spin-coating and a vapor transport approach, were performed on as-grown SrFeO{sub 2.5} films. We highlight differences in the structural, compositional, and optical properties of the oxyfluoride films obtained via the two methods, providing insight into how fluorination reactions can be used to modify electronic and optical behavior in complex oxide heterostructures.

  13. Rf reactive sputtering of indium-tin-oxide films

    International Nuclear Information System (INIS)

    Tvarozek, V.; Novotny, I.; Harman, R.; Kovac, J.

    1986-01-01

    Films of indium-tin-oxide (ITO) have been deposited by rf reactive diode sputtering of metallic InSn alloy targets, or ceramic ITO targets, in an Ar and Ar+0 2 atmosphere. Electrical as well as optical properties of ITO films were controlled by varying sputtering parameters and by post-deposition heat-treatment in Ar, H 2 , N 2 , H 2 +N 2 ambients. The ITO films exhibited low resistivity approx. 2 x 10 -4 Ω cm, high transmittance approx. 90% in the visible spectral region and high reflectance approx. 80% in the near infra-red region. (author)

  14. Morphology selection for cupric oxide thin films by electrodeposition.

    Science.gov (United States)

    Dhanasekaran, V; Mahalingam, T; Chandramohan, R

    2011-10-01

    Polycrystalline cupric oxide thin films were deposited using alkaline solution bath employing cathodic electrodeposition method. The thin films were electrodeposited at various solution pH. The surface morphology and elemental analyzes of the films were studied using scanning electron microscopy (SEM) and energy dispersive X-ray analysis, respectively. SEM studies revealed that the surface morphology could be tailored suitably by adjusting the pH value during deposition. Mesh average on multiple lattice mode atomic force microscopy image was obtained and reported. Copyright © 2011 Wiley-Liss, Inc.

  15. Comparison of topotactic fluorination methods for complex oxide films

    Directory of Open Access Journals (Sweden)

    E. J. Moon

    2015-06-01

    Full Text Available We have investigated the synthesis of SrFeO3−αFγ (α and γ ≤ 1 perovskite films using topotactic fluorination reactions utilizing poly(vinylidene fluoride as a fluorine source. Two different fluorination methods, a spin-coating and a vapor transport approach, were performed on as-grown SrFeO2.5 films. We highlight differences in the structural, compositional, and optical properties of the oxyfluoride films obtained via the two methods, providing insight into how fluorination reactions can be used to modify electronic and optical behavior in complex oxide heterostructures.

  16. Surface and sub-surface thermal oxidation of thin ruthenium films

    Energy Technology Data Exchange (ETDEWEB)

    Coloma Ribera, R.; Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F. [MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Kokke, S.; Zoethout, E. [FOM Dutch Institute for Fundamental Energy Research (DIFFER), P.O. Box 1207, 3430 BE Nieuwegein (Netherlands)

    2014-09-29

    A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low density and high density oxides. Nano-columns grow at the surface of the low density oxide layer, with the growth rate being limited by diffusion of ruthenium through the formed oxide film. Simultaneously, with the growth of the columns, sub-surface high density oxide continues to grow limited by diffusion of oxygen or ruthenium through the oxide film.

  17. Effects of Thermal Annealing Conditions on Cupric Oxide Thin Film

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyo Seon; Oh, Hee-bong; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

    2015-07-15

    In this study, cupric oxide (CuO) thin films were grown on fluorine doped tin oxide(FTO) substrate by using spin coating method. We investigated the effects of thermal annealing temperature and thermal annealing duration on the morphological, structural, optical and photoelectrochemical properties of the CuO film. From the results, we could find that the morphologies, grain sizes, crystallinity and photoelectrochemical properties were dependent on the annealing conditions. As a result, the maximum photocurrent density of -1.47 mA/cm{sup 2} (vs. SCE) was obtained from the sample with the thermal annealing conditions of 500 ℃ and 40 min.

  18. Formation and microstructure of nickel oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Marcius, Marijan [Ruder Boskovic Institute, P.O. Box 180, HR-10002 Zagreb (Croatia); Ristic, Mira, E-mail: ristic@irb.hr [Ruder Boskovic Institute, P.O. Box 180, HR-10002 Zagreb (Croatia); Ivanda, Mile; Music, Svetozar [Ruder Boskovic Institute, P.O. Box 180, HR-10002 Zagreb (Croatia)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer Difference in NiO films formed on Ni plate or glass substrate were found. Black-Right-Pointing-Pointer NiO particle sizes on Ni plate changed from nano to micron dimensions. Black-Right-Pointing-Pointer NiO particle sizes on glass substrate changed from {approx}16 to {approx}27 nm. Black-Right-Pointing-Pointer Raman and UV/Vis/NIR spectra are related to the microstructure of NiO films. - Abstract: The formation and microstructure of NiO films on different substrates were monitored using XRD, Raman, UV/Vis/NIR and FE-SEM/EDS techniques. The formation of NiO films on Ni plates in air atmosphere between 400 and 800 Degree-Sign C was confirmed by XRD and Raman spectroscopy. The origin of Raman bands and corresponding Raman shifts in the samples are discussed. An increase in the size of NiO particles in the films from nano to micro dimensions was demonstrated. A change in the atomic ratio Ni:O with an increase in heating temperature was observed. Polished Ni plates coated with a thin Ni-acetate layer upon heating at high temperatures gave similar NiO microstructures on the surface like in the case of non-treated Ni plates. Glass substrates coated with thin Ni-acetate films upon heating between 400 and 800 Degree-Sign C yielded pseudospherical NiO nanoparticles. The dominant Raman band as an indicator of NiO formation on a glass substrate was shown. The formation of NiO nanoparticles on glass substrates with maximum size distribution from 16 to 27 nm in a broad temperature range from 400 to 800 Degree-Sign C can be explained by the absence of a constant source of metallic nickel which was present in the case of Ni plates.

  19. Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layers

    Energy Technology Data Exchange (ETDEWEB)

    Puttaswamy, Manjunath; Vehkamäki, Marko [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Kukli, Kaupo, E-mail: kaupo.kukli@helsinki.fi [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); University of Tartu, Institute of Physics, W. Ostwald 1, EE-50411 Tartu (Estonia); Dimri, Mukesh Chandra [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Kemell, Marianna; Hatanpää, Timo; Heikkilä, Mikko J. [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Mizohata, Kenichiro [University of Helsinki, Department of Physics, P.O. Box 64, FI-00014 Helsinki (Finland); Stern, Raivo [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Ritala, Mikko; Leskelä, Markku [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland)

    2016-07-29

    Bismuth iron oxide films with varying contributions from Fe{sub 2}O{sub 3} or Bi{sub 2}O{sub 3} were prepared using atomic layer deposition. Bismuth (III) 2,3-dimethyl-2-butoxide, was used as the bismuth source, iron(III) tert-butoxide as the iron source and water vapor as the oxygen source. The films were deposited as stacks of alternate Bi{sub 2}O{sub 3} and Fe{sub 2}O{sub 3} layers. Films grown at 140 °C to the thickness of 200–220 nm were amorphous, but crystallized upon post-deposition annealing at 500 °C in nitrogen. Annealing of films with intermittent bismuth and iron oxide layers grown to different thicknesses influenced their surface morphology, crystal structure, composition, electrical and magnetic properties. Implications of multiferroic performance were recognized in the films with the remanent charge polarization varying from 1 to 5 μC/cm{sup 2} and magnetic coercivity varying from a few up to 8000 A/m. - Highlights: • Bismuth iron oxide thin films were grown by atomic layer deposition at 140 °C. • The major phase formed in the films upon annealing at 500 °C was BiFeO{sub 3}. • BiFeO{sub 3} films and films containing excess Bi favored electrical charge polarization. • Slight excess of iron oxide enhanced saturative magnetization behavior.

  20. Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

    International Nuclear Information System (INIS)

    Zhang, Hongliang; Wan, Qing; Wan, Changjin; Wu, Guodong; Zhu, Liqiang

    2013-01-01

    Tungsten oxide (WO x ) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 × 10 −4 S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WO x -based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 × 10 6 , a low subthreshold swing of 108 mV/decade, and a high field-effect mobility 42.6 cm 2 /V s was realized. Our results demonstrated that WO x -based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices.

  1. Interface and oxide traps in high-κ hafnium oxide films

    International Nuclear Information System (INIS)

    Wong, H.; Zhan, N.; Ng, K.L.; Poon, M.C.; Kok, C.W.

    2004-01-01

    The origins of the interface trap generation and the effects of thermal annealing on the interface and bulk trap distributions are studied in detail. We found that oxidation of the HfO 2 /Si interface, removal of deep trap centers, and crystallization of the as-deposited film will take place during the post-deposition annealing (PDA). These processes will result in the removal of interface traps and deep oxide traps and introduce a large amount of shallow oxide traps at the grain boundaries of the polycrystalline film. Thus, trade-off has to be made in considering the interface trap density and oxide trap density when conducting PDA. In addition, the high interface trap and oxide trap densities of the HfO 2 films suggest that we may have to use the SiO 2 /HfO 2 stack or hafnium silicate structure for better device performance

  2. Monodispersed macroporous architecture of nickel-oxide film as an anode material for thin-film lithium-ion batteries

    International Nuclear Information System (INIS)

    Wu, Mao-Sung; Lin, Ya-Ping

    2011-01-01

    A nickel-oxide film with monodispersed open macropores was prepared on a stainless-steel substrate by electrophoretic deposition of a polystyrene-sphere monolayer followed by anodic electrodeposition of nickel oxy-hydroxide. The deposited films convert to cubic nickel oxide after annealing at 400 o C for 1 h. Galvanostatic charge and discharge results indicate that the nickel-oxide film with monodispersed open macropores is capable of delivering a higher capacity than the bare nickel-oxide film, especially in high-rate charge and discharge processes. The lithiation capacity of macroporous nickel oxide reaches 1620 mA h g -1 at 1 C current discharge and decreases to 990 mA h g -1 at 15 C current discharge. The presence of monodispersed open macropores in the nickel-oxide film might facilitate the electrolyte penetration, diffusion, and migration. Electrochemical reactions between nickel oxide and lithium ions are therefore markedly improved by this tailored film architecture.

  3. Pepspectives of chlorine application in metallurgy of vanadium

    International Nuclear Information System (INIS)

    Korshunov, B.G.; Kutsenko, S.A.

    1983-01-01

    The most expedient variants of reprocessing of vanadium technical oxide (5), ferrovanadium and converter slags by chlorine technology with production of pure metal are considered. It is shown that production of vanadium by the way of electro- or metallothermal reduction of chlorides provides more plastic metal in comparison with reduction from oxides. The methods of production of VOCl 3 , VCl 4 and vanadium lowest chlorides are considered. Necessity of expansion of production of vanadium chlorine derivatives is dictated as well by their increasing application in different areas of national economy, in particular, as catalysts in organic synthesis

  4. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    International Nuclear Information System (INIS)

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

    1992-01-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

  5. Vanadium recycling in the United States in 2004

    Science.gov (United States)

    Goonan, Thomas G.

    2011-01-01

    As one of a series of reports that describe the recycling of metal commodities in the United States, this report discusses the flow of vanadium in the U.S. economy in 2004. This report includes a description of vanadium supply and demand in the United States and illustrates the extent of vanadium recycling and recycling trends. In 2004, apparent vanadium consumption, by end use, in the United States was 3,820 metric tons (t) in steelmaking and 232 t in manufacturing, of which 17 t was for the production of superalloys and 215 t was for the production of other alloys, cast iron, catalysts, and chemicals. Vanadium use in steel is almost entirely dissipative because recovery of vanadium from steel scrap is chemically impeded under the oxidizing conditions in steelmaking furnaces. The greatest amount of vanadium recycling is in the superalloy, other-alloy, and catalyst sectors of the vanadium market. Vanadium-bearing catalysts are associated with hydrocarbon recovery and refining in the oil industry. In 2004, 2,850 t of vanadium contained in alloy scrap and spent catalysts was recycled, which amounted to about 44 percent of U.S. domestic production. About 94 percent of vanadium use in the United States was dissipative (3,820 t in steel/4,050 t in steel+fabricated products).

  6. Remote plasma-enhanced metalorganic chemical vapor deposition of aluminum oxide thin films

    NARCIS (Netherlands)

    Volintiru, I.; Creatore, M.; Hemmen, van J.L.; Sanden, van de M.C.M.

    2008-01-01

    Aluminum oxide films were deposited using remote plasma-enhanced metalorganic chemical vapor deposition from oxygen/trimethylaluminum mixtures. Initial studies by in situ spectroscopic ellipsometry demonstrated that the aluminum oxide films deposited at temperatures

  7. Structural and optical properties of electrodeposited molybdenum oxide thin films

    International Nuclear Information System (INIS)

    Patil, R.S.; Uplane, M.D.; Patil, P.S.

    2006-01-01

    Electrosynthesis of Mo(IV) oxide thin films on F-doped SnO 2 conducting glass (10-20/Ω/□) substrates were carried from aqueous alkaline solution of ammonium molybdate at room temperature. The physical characterization of as-deposited films carried by thermogravimetric/differential thermogravimetric analysis (TGA/DTA), infrared spectroscopy and X-ray diffraction (XRD) showed the formation of hydrous and amorphous MoO 2 . Scanning electron microscopy (SEM) revealed a smooth but cracked surface with multi-layered growth. Annealing of these films in dry argon at 450 deg. C for 1 h resulted into polycrystalline MoO 2 with crystallites aligned perpendicular to the substrate. Optical absorption study indicated a direct band gap of 2.83 eV. The band gap variation consistent with Moss rule and band gap narrowing upon crystallization was observed. Structure tailoring of as-deposited thin films by thermal oxidation in ambient air to obtain electrochromic Mo(VI) oxide thin films was exploited for the first time by this novel route. The results of this study will be reported elsewhere

  8. A new oxidimetric reagent: potassium dichromate in a strong phosphoric acid medium-VI Potentiometric titration of vanadium(III) alone and in mixture with vanadium(IV).

    Science.gov (United States)

    Rao, G G; Rao, P K

    1966-09-01

    Vanadium(III) can be titrated at room temperature with potassium dichromate in an 8-12M phosphoric acid medium. Two potential breaks are observed in 12M phosphoric add with 0.2N potassium dichromate, the first corresponding to the oxidation of vanadium(III) to vanadium(IV) and the second to the oxidation of vanadium(IV) to vanadium(V). In titrations with 0.05N dichromate only the first break in potential is clearly observed. The method has been extended to the titration of mixtures of vanadium(III) and vanadium(IV). Conditions have also been found for the visual titration of vanadium(III) using ferroln or barium diphenylamine sulphonate as indicator.

  9. Thermochromic Oxide-Based Thin Films and Nanoparticle Composites for Energy-Efficient Glazings

    Directory of Open Access Journals (Sweden)

    Claes G. Granqvist

    2016-12-01

    Full Text Available Today’s advances in materials science and technology can lead to better buildings with improved energy efficiency and indoor conditions. Particular attention should be directed towards windows and glass facades—jointly known as “glazings”—since current practices often lead to huge energy expenditures related to excessive inflow or outflow of energy which need to be balanced by energy-intensive cooling or heating. This review article outlines recent progress in thermochromics, i.e., it deals with materials whose optical properties are strongly dependent on temperature. In particular, we discuss oxide-based thin surface coatings (thin films and nanoparticle composites which can be deposited onto glass and are able to regulate the throughput of solar energy while the luminous (visible properties remain more or less unaltered. Another implementation embodies lamination materials incorporating thermochromic (TC nanoparticles. The thin films and nanocomposites are based on vanadium dioxide (VO2, which is able to change its properties within a narrow temperature range in the vicinity of room temperature and either reflects or absorbs infrared light at elevated temperatures, whereas the reflectance or absorptance is much smaller at lower temperatures. The review outlines the state of the art for these thin films and nanocomposites with particular attention to recent developments that have taken place in laboratories worldwide. Specifically, we first set the scene by discussing environmental challenges and their relationship with TC glazings. Then enters VO2 and we present its key properties in thin-film form and as nanoparticles. The next part of the article gives perspectives on the manufacturing of these films and particles. We point out that the properties of pure VO2 may not be fully adequate for buildings and we elaborate how additives, antireflection layers, nanostructuring and protective over-coatings can be employed to yield improved

  10. Electro-mechanical coupling of semiconductor film grown on stainless steel by oxidation

    Science.gov (United States)

    Lin, M. C.; Wang, G.; Guo, L. Q.; Qiao, L. J.; Volinsky, Alex A.

    2013-09-01

    Electro-mechanical coupling phenomenon in oxidation film on stainless steel has been discovered by using current-sensing atomic force microscopy, along with the I-V curves measurements. The oxidation films exhibit either ohmic, n-type, or p-type semiconductor properties, according to the obtained I-V curves. This technique allows characterizing oxidation films with high spatial resolution. Semiconductor properties of oxidation films must be considered as additional stress corrosion cracking mechanisms.

  11. Optical characterisation of thin film cadmium oxide prepared by a ...

    African Journals Online (AJOL)

    The optical transmission spectra of transparent conducting cadmium oxide (CdO) thin films deposited by a modified reactive evaporation process onto glass substrates have been measured. The interference fringes were used to calculate the refractive index, thickness variation, average thickness and absorption coefficient ...

  12. solution growth and characterization of copper oxide thin films ...

    African Journals Online (AJOL)

    Thin films of copper oxide (CuO) were grown on glass slides by using the solution growth technique. Copper cloride (CuCl ) and potassium telluride (K T O ) were used. Buffer 2 2e 3 solution was used as complexing agent. The solid state properties and optical properties were obtained from characterization done using PYE ...

  13. Nanoscale reduction of graphene oxide thin films and its characterization

    KAUST Repository

    Lorenzoni, M.; Giugni, Andrea; Di Fabrizio, Enzo M.; Pé rez-Murano, Francesc; Mescola, A.; Torre, Bruno

    2015-01-01

    In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip

  14. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

  15. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  16. Effect of thermal annealing of lead oxide film

    International Nuclear Information System (INIS)

    Hwang, Oh Hyeon; Kim, Sang Su; Suh, Jong Hee; Cho, Shin Hang; Kim, Ki Hyun; Hong, Jin Ki; Kim, Sun Ung

    2011-01-01

    Oxygen partial pressure in a growth process of lead oxide determines chemical and physical properties as well as crystalline structure. In order to supply oxygen, two ring-shape suppliers have been installed in a growth chamber. Films have been deposited using vacuum thermal evaporation from a raw material of yellow lead oxide powder (5N). Growth rate is controlled to be about 400 A/s, and film thickness more than 50 μm has been achieved. After deposition, the film is annealed at various temperatures under an oxygen atmosphere. In this study, an optimum growth condition for a good X-ray detector has been achieved by fine control of oxygen flow-rate and by thermal treatment. An electrical resistivity of 4.5x10 12 Ω cm is measured, and is comparable with the best data of PbO.

  17. High mobility transparent conducting oxides for thin film solar cells

    International Nuclear Information System (INIS)

    Calnan, S.; Tiwari, A.N.

    2010-01-01

    A special class of transparent conducting oxides (TCO) with high mobility of > 65 cm 2 V -1 s -1 allows film resistivity in the low 10 -4 Ω cm range and a high transparency of > 80% over a wide spectrum, from 300 nm to beyond 1500 nm. This exceptional coincidence of desirable optical and electrical properties provides opportunities to improve the performance of opto-electronic devices and opens possibilities for new applications. Strategies to attain high mobility (HM) TCO materials as well as the current status of such materials based on indium and cadmium containing oxides are presented. Various concepts used to understand the underlying mechanisms for high mobility in HMTCO films are discussed. Examples of HMTCO layers used as transparent electrodes in thin film solar cells are used to illustrate possible improvements in solar cell performance. Finally, challenges and prospects for further development of HMTCO materials are discussed.

  18. Atomic layer deposition of calcium oxide and calcium hafnium oxide films using calcium cyclopentadienyl precursor

    International Nuclear Information System (INIS)

    Kukli, Kaupo; Ritala, Mikko; Sajavaara, Timo; Haenninen, Timo; Leskelae, Markku

    2006-01-01

    Calcium oxide and calcium hafnium oxide thin films were grown by atomic layer deposition on borosilicate glass and silicon substrates in the temperature range of 205-300 o C. The calcium oxide films were grown from novel calcium cyclopentadienyl precursor and water. Calcium oxide films possessed refractive index 1.75-1.80. Calcium oxide films grown without Al 2 O 3 capping layer occurred hygroscopic and converted to Ca(OH) 2 after exposure to air. As-deposited CaO films were (200)-oriented. CaO covered with Al 2 O 3 capping layers contained relatively low amounts of hydrogen and re-oriented into (111) direction upon annealing at 900 o C. In order to examine the application of CaO in high-permittivity dielectric layers, mixtures of Ca and Hf oxides were grown by alternate CaO and HfO 2 growth cycles at 230 and 300 o C. HfCl 4 was used as a hafnium precursor. When grown at 230 o C, the films were amorphous with equal amounts of Ca and Hf constituents (15 at.%). These films crystallized upon annealing at 750 o C, showing X-ray diffraction peaks characteristic of hafnium-rich phases such as Ca 2 Hf 7 O 16 or Ca 6 Hf 19 O 44 . At 300 o C, the relative Ca content remained below 8 at.%. The crystallized phase well matched with rhombohedral Ca 2 Hf 7 O 16 . The dielectric films grown on Si(100) substrates possessed effective permittivity values in the range of 12.8-14.2

  19. Perovskite Oxide Thin Film Growth, Characterization, and Stability

    Science.gov (United States)

    Izumi, Andrew

    Studies into a class of materials known as complex oxides have evoked a great deal of interest due to their unique magnetic, ferroelectric, and superconducting properties. In particular, materials with the ABO3 perovskite structure have highly tunable properties because of the high stability of the structure, which allows for large scale doping and strain. This also allows for a large selection of A and B cations and valences, which can further modify the material's electronic structure. Additionally, deposition of these materials as thin films and superlattices through techniques such as pulsed laser deposition (PLD) results in novel properties due to the reduced dimensionality of the material. The novel properties of perovskite oxide heterostructures can be traced to a several sources, including chemical intermixing, strain and defect formation, and electronic reconstruction. The correlations between microstructure and physical properties must be investigated by examining the physical and electronic structure of perovskites in order to understand this class of materials. Some perovskites can undergo phase changes due to temperature, electrical fields, and magnetic fields. In this work we investigated Nd0.5Sr 0.5MnO3 (NSMO), which undergoes a first order magnetic and electronic transition at T=158K in bulk form. Above this temperature NSMO is a ferromagnetic metal, but transitions into an antiferromagnetic insulator as the temperature is decreased. This rapid transition has interesting potential in memory devices. However, when NSMO is deposited on (001)-oriented SrTiO 3 (STO) or (001)-oriented (LaAlO3)0.3-(Sr 2AlTaO6)0.7 (LSAT) substrates, this transition is lost. It has been reported in the literature that depositing NSMO on (110)-oriented STO allows for the transition to reemerge due to the partial epitaxial growth, where the NSMO film is strained along the [001] surface axis and partially relaxed along the [11¯0] surface axis. This allows the NSMO film enough

  20. Optimum deposition, structure, and properties of tantalum oxide films

    International Nuclear Information System (INIS)

    Lin, Y.C.

    1985-01-01

    Amorphous, ductile, and uniform Ta 2 O 5 films that acted as diffusion barriers were developed by sputter depositing Ta metal on Al single crystals (99.99%) and subsequently anodizing these thin films. The morphology, microstructure, composition and properties were characterized by scanning and transmission electron microscopy, surface and Fourier transform infrared spectroscopy, X-ray diffraction, and fluorescence. Superior corrosion resistance in a water saturated Cl 2 atmosphere was provided by Ta 2 O 5 coating on Al single crystal substrates but not on Al alloys. The strong Ta-O bond, the non-porous nature of the film and good adhesion to the substrate are attributed to the outstanding corrosion resistance of these oxide coatings. Al alloy surfaces are not protected, since the anodic film formed over grain boundaries, processing lines and emergent precipitates is poorly adherent, thus providing loci for corrosion. These problems were eliminated by casting a 400 A layer of tantalum oxyhydroxide polymer from ethanol solution onto Al substrate and curing to a Ta 2 O 5 layer that effectively resisted attack by wet Cl 2 . The mechanical properties of Ta 2 O 5 films on Al alloys were studied at various pH's by in-situ fatigue loading coupled with electrochemical measurements of corrosion potential and corrosion current. These results indicate the fatigue resistance of this oxide film effectively protects the underlying metal from strong HCl solution attack. The very unusual ductility and high corrosion resistance of Ta 2 O 5 films could be related to the graphite-like structure that exists in the amorphous state of this oxide

  1. Structural and Redox Properties of Vanadium Complexes in Molten Salts of Interest for the Catalytic Oxidation of Sulfur Dioxide

    DEFF Research Database (Denmark)

    Boghosian, S.; Chrissanthopoulos, A.; Fehrmann, Rasmus

    2000-01-01

    Electronic absorption (UV/VIS) spectra have been obtained at 450 degrees C from V2O5-K2S2O7 molten mixtures in SO2 ( P-SO2 = 0 - 1.2 atm) gas atmospheres. The data are in agreement with the V-V reversible arrow V-IV equilibrium: (VO)(2)O(SO4)(4)(4-)(l) + SO2(g) - 2VO(SO4)(2)(2-)(l) + SO3(g). Sulfur...... and vibrational properties of the vanadium complexes formed in the molten salt-gas system V2O5-M2S2O7-M2SO4/SO2-O-2 (M = K or Cs). The spectral features and the exploitation of the relative Raman intensities indicate that the (VO)(2)O(SO4)(4)(+) dimeric complex unit which possesses a V-O-V bridge is formed...

  2. Indium oxide inverse opal films synthesized by structure replication method

    Science.gov (United States)

    Amrehn, Sabrina; Berghoff, Daniel; Nikitin, Andreas; Reichelt, Matthias; Wu, Xia; Meier, Torsten; Wagner, Thorsten

    2016-04-01

    We present the synthesis of indium oxide (In2O3) inverse opal films with photonic stop bands in the visible range by a structure replication method. Artificial opal films made of poly(methyl methacrylate) (PMMA) spheres are utilized as template. The opal films are deposited via sedimentation facilitated by ultrasonication, and then impregnated by indium nitrate solution, which is thermally converted to In2O3 after drying. The quality of the resulting inverse opal film depends on many parameters; in this study the water content of the indium nitrate/PMMA composite after drying is investigated. Comparison of the reflectance spectra recorded by vis-spectroscopy with simulated data shows a good agreement between the peak position and calculated stop band positions for the inverse opals. This synthesis is less complex and highly efficient compared to most other techniques and is suitable for use in many applications.

  3. Ferroelectric thin films using oxides as raw materials

    Directory of Open Access Journals (Sweden)

    E.B. Araújo

    1999-01-01

    Full Text Available This work describes an alternative method for the preparation of ferroelectric thin films based on pre-calcination of oxides, to be used as precursor material for a solution preparation. In order to show the viability of the proposed method, PbZr0.53Ti0.47O3 and Bi4Ti3O12 thin films were prepared on fused quartz and Si substrates. The results were analyzed by X-ray Diffraction (XRD, Scanning Electron Microscopy (SEM, Infrared Spectroscopy (IR and Rutherford Backscattering Spectroscopy (RBS. The films obtained show good quality, homogeneity and the desired stoichiometry. The estimated thickness for one layer deposition was approximately 1000 Å and 1500 Å for Bi4Ti3O12 and PbZr0.53Ti0.47O3 films, respectively.

  4. Structural transformation of nickel hydroxide films during anodic oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Crocker, Robert W. [Univ. of California, Berkeley, CA (United States); Muller, Rolf H. [Univ. of California, Berkeley, CA (United States)

    1992-05-01

    The transformation of anodically formed nickel hydroxide/oxy-hydroxide electrodes has been investigated. A mechanism is proposed for the anodic oxidation reaction, in which the reaction interface between the reduced and oxidized phases of the electrode evolves in a nodular topography that leads to inefficient utilization of the active electrode material. In the proposed nodular transformation model for the anodic oxidation reaction, nickel hydroxide is oxidized to nickel oxy-hydroxide in the region near the metal substrate. Since the nickel oxy-hydroxide is considerably more conductive than the surrounding nickel hydroxide, as further oxidation occurs, nodular features grow rapidly to the film/electrolyte interface. Upon emerging at the electrolyte interface, the reaction boundary between the nickel hydroxide and oxy-hydroxide phases spreads laterally across the film/electrolyte interface, creating an overlayer of nickel oxy-hydroxide and trapping uncharged regions of nickel hydroxide within the film. The nickel oxy-hydroxide overlayer surface facilitates the oxygen evolution side reaction. Scanning tunneling microscopy of the electrode in its charged state revealed evidence of 80 - 100 Angstrom nickel oxy-hydroxide nodules in the nickel hydroxide film. In situ spectroscopic ellipsometer measurements of films held at various constant potentials agree quantitatively with optical models appropriate to the nodular growth and subsequent overgrowth of the nickel oxy-hydroxide phase. A two-dimensional, numerical finite difference model was developed to simulate the current distribution along the phase boundary between the charged and uncharged material. The model was used to explore the effects of the physical parameters that govern the electrode behavior. The ratio of the conductivities of the nickel hydroxide and oxy-hydroxide phases was found to be the dominant parameter in the system.

  5. Structural transformation of nickel hydroxide films during anodic oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Crocker, R.W.; Muller, R.H.

    1992-05-01

    The transformation of anodically formed nickel hydroxide/oxy-hydroxide electrodes has been investigated. A mechanism is proposed for the anodic oxidation reaction, in which the reaction interface between the reduced and oxidized phases of the electrode evolves in a nodular topography that leads to inefficient utilization of the active electrode material. In the proposed nodular transformation model for the anodic oxidation reaction, nickel hydroxide is oxidized to nickel oxy-hydroxide in the region near the metal substrate. Since the nickel oxy-hydroxide is considerably more conductive than the surrounding nickel hydroxide, as further oxidation occurs, nodular features grow rapidly to the film/electrolyte interface. Upon emerging at the electrolyte interface, the reaction boundary between the nickel hydroxide and oxy-hydroxide phases spreads laterally across the film/electrolyte interface, creating an overlayer of nickel oxy-hydroxide and trapping uncharged regions of nickel hydroxide within the film. The nickel oxy-hydroxide overlayer surface facilitates the oxygen evolution side reaction. Scanning tunneling microscopy of the electrode in its charged state revealed evidence of 80 {endash} 100 Angstrom nickel oxy-hydroxide nodules in the nickel hydroxide film. In situ spectroscopic ellipsometer measurements of films held at various constant potentials agree quantitatively with optical models appropriate to the nodular growth and subsequent overgrowth of the nickel oxy-hydroxide phase. A two-dimensional, numerical finite difference model was developed to simulate the current distribution along the phase boundary between the charged and uncharged material. The model was used to explore the effects of the physical parameters that govern the electrode behavior. The ratio of the conductivities of the nickel hydroxide and oxy-hydroxide phases was found to be the dominant parameter in the system.

  6. Tantalum oxide thin films as protective coatings for sensors

    DEFF Research Database (Denmark)

    Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

    1999-01-01

    Reactively sputtered tantalum oxide thin films have been investigated as protective coatings for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å h-l. Etching in liquids...... with pH values in the range from pH 2 to 11 have generally given etch rates below 0.04 Å h-l. On the other hand patterning is possible in hydrofluoric acid. Further, the passivation behaviour of amorphous tantalum oxide and polycrystalline Ta2O5 is different in buffered hydrofluoric acid. By ex situ...... annealing O2 in the residual thin-film stress can be altered from compressive to tensile and annealing at 450°C for 30 minutes gives a stress-free film. The step coverage of the sputter deposited amorphous tantalum oxide is reasonable, but metallization lines are hard to cover. Sputtered tantalum oxide...

  7. Tantalum oxide thin films as protective coatings for sensors

    DEFF Research Database (Denmark)

    Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

    1999-01-01

    Reactively sputtered tantalum oxide thin-films have been investigated as protective coating for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å/h. Etching in liquids with p......H values in the range from pH 2-11 have generally given etch rates below 0.04 Å/h. On the other hand patterning is possible in hydrofluoric acid. Further, the passivation behaviour of amorphous tantalum oxide and polycrystalline Ta2O5 is different in buffered hydrofluoric acid. By ex-situ annealing in O2...... the residual thin-film stress can be altered from compressive to tensile and annealing at 450°C for 30 minutes gives a stress-free film. The step coverage of the sputter deposited amorphous tantalum oxide is reasonable, but metallisation lines are hard to cover. Sputtered tantalum oxide exhibits high...

  8. Albumin adsorption on oxide thin films studied by spectroscopic ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Silva-Bermudez, P., E-mail: suriel21@yahoo.com [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito Exterior s/n, C.U., 04510, Mexico D.F. (Mexico); Unidad de Posgrado, Facultad de Odontologia, Universidad Nacional Autonoma de Mexico, CU, 04510, Mexico D.F. (Mexico); Rodil, S.E.; Muhl, S. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito Exterior s/n, C.U., 04510, Mexico D.F. (Mexico)

    2011-12-15

    Thin films of tantalum, niobium, zirconium and titanium oxides were deposited by reactive magnetron sputtering and their wettability and surface energy, optical properties, roughness, chemical composition and microstructure were characterized using contact angle measurements, spectroscopic ellipsometry, profilometry, X-ray photoelectron spectroscopy and X-ray diffraction, respectively. The purpose of the work was to correlate the surface properties of the films to the Bovine Serum Albumin (BSA) adsorption, as a first step into the development of an initial in vitro test of the films biocompatibility, based on standardized protein adsorption essays. The films were immersed into BSA solutions with different protein concentrations and protein adsorption was monitored in situ by dynamic ellipsometry; the adsorption-rate was dependent on the solution concentration and the immersion time. The overall BSA adsorption was studied in situ using spectroscopic ellipsometry and it was found to be influenced by the wettability of the films; larger BSA adsorption occurred on the more hydrophobic surface, the ZrO{sub 2} film. On the Ta{sub 2}O{sub 5}, Nb{sub 2}O{sub 5} and TiO{sub 2} films, hydrophilic surfaces, the overall BSA adsorption increased with the surface roughness or the polar component of the surface energy.

  9. Vanadium Compounds as PTP Inhibitors

    Directory of Open Access Journals (Sweden)

    Elsa Irving

    2017-12-01

    Full Text Available Phosphotyrosine signaling is regulated by the opposing actions of protein tyrosine kinases (PTKs and protein tyrosine phosphatases (PTPs. Here we discuss the potential of vanadium derivatives as PTP enzyme inhibitors and metallotherapeutics. We describe how vanadate in the V oxidized state is thought to inhibit PTPs, thus acting as a pan-inhibitor of this enzyme superfamily. We discuss recent developments in the biological and biochemical actions of more complex vanadium derivatives, including decavanadate and in particular the growing number of oxidovanadium compounds with organic ligands. Pre-clinical studies involving these compounds are discussed in the anti-diabetic and anti-cancer contexts. Although in many cases PTP inhibition has been implicated, it is also clear that many such compounds have further biochemical effects in cells. There also remain concerns surrounding off-target toxicities and long-term use of vanadium compounds in vivo in humans, hindering their progress through clinical trials. Despite these current misgivings, interest in these chemicals continues and many believe they could still have therapeutic potential. If so, we argue that this field would benefit from greater focus on improving the delivery and tissue targeting of vanadium compounds in order to minimize off-target toxicities. This may then harness their full therapeutic potential.

  10. A method for recovery of iron, titanium, and vanadium from vanadium-bearing titanomagnetite

    Science.gov (United States)

    Zhang, Yi-min; Wang, Li-na; Chen, De-sheng; Wang, Wei-jing; Liu, Ya-hui; Zhao, Hong-xin; Qi, Tao

    2018-02-01

    An innovative method for recovering valuable elements from vanadium-bearing titanomagnetite is proposed. This method involves two procedures: low-temperature roasting of vanadium-bearing titanomagnetite and water leaching of roasting slag. During the roasting process, the reduction of iron oxides to metallic iron, the sodium oxidation of vanadium oxides to water-soluble sodium vanadate, and the smelting separation of metallic iron and slag were accomplished simultaneously. Optimal roasting conditions for iron/slag separation were achieved with a mixture thickness of 42.5 mm, a roasting temperature of 1200°C, a residence time of 2 h, a molar ratio of C/O of 1.7, and a sodium carbonate addition of 70wt%, as well as with the use of anthracite as a reductant. Under the optimal conditions, 93.67% iron from the raw ore was recovered in the form of iron nugget with 95.44% iron grade. After a water leaching process, 85.61% of the vanadium from the roasting slag was leached, confirming the sodium oxidation of most of the vanadium oxides to water-soluble sodium vanadate during the roasting process. The total recoveries of iron, vanadium, and titanium were 93.67%, 72.68%, and 99.72%, respectively.

  11. The influence of Ac parameters in the process of micro-arc oxidation film electric breakdown

    Directory of Open Access Journals (Sweden)

    Ma Jin

    2016-01-01

    Full Text Available This paper studies the electric breakdown discharge process of micro-arc oxidation film on the surface of aluminum alloy. Based on the analysis of the AC parameters variation in the micro-arc oxidation process, the following conclusions can be drawn: The growth of oxide film can be divided into three stages, and Oxide film breakdown discharge occurs twice in the micro-arc oxidation process. The first stage is the formation and disruptive discharge of amorphous oxide film, producing the ceramic oxide granules, which belong to solid dielectric breakdown. In this stage the membrane voltage of the oxide film plays a key role; the second stage is the formation of ceramic oxide film, the ceramic oxide granules turns into porous structure oxide film in this stage; the third stage is the growth of ceramic oxide film, the gas film that forms in the oxide film’s porous structure is electric broken-down, which is the second breakdown discharge process, the current density on the oxide film surface could affect the breakdown process significantly.

  12. Carbon contaminant in the ion processing of aluminum oxide film

    International Nuclear Information System (INIS)

    Chaug, Y.; Roy, N.

    1989-01-01

    Ion processing can induce contamination on the bombarded surface. However, this process is essential for the microelectronics device fabrication. Auger electron spectroscopy has been used to study the simultaneous deposition of carbon impurity during ion bombardment of magnetron rf-sputtering deposited aluminum oxide film. Ion bombardment on aluminum oxide results in a preferential removal of surface oxygen and a formation of a metastable state of aluminum suboxide. Cosputtered implanted carbon contaminant appears to have formed a new state of stoichiometry on the surface of the ion bombarded aluminum oxide and existed as an aluminum carbide. This phase has formed due to the interaction of the implanted carbon and the aluminum suboxide. The Ar + ion sputter etching rate is reduced for the carbon contaminated oxide. The electrical resistance of the aluminum oxide between two gold strips has been measured. It is found that the electrical resistance is also reduced due to the formation of the new stoichiometry on the surface

  13. Ion-exchange preparation of high-purity vanadium acid from industrial liquors

    International Nuclear Information System (INIS)

    Sajdakhmedov, U.A.; Arslanov, Sh.S.; Vulikh, A.I.

    1994-01-01

    The results of investigations on production of special-purity vanadium acid and vanadium oxide directly from process solutions (technical grade liquors) using ionites are presented. Potentiality of thorough purification of vanadium(5) oxide, when producing vanadium acid on the KU-2 cationite with subsequent purification on anionite, is shown. On the basis of the results obtained a principle flowsheet of ion-exchange production of high-purity vanadium(5) oxide from industrial liquors has been developed. 2 refs.; 1 fig.; 4 tabs

  14. Significance of porous structure on degradatin of 2 2' dichloro diethyl sulphide and 2 chloroethyl ethyl sulphide on the surface of vanadium oxide nanostructure

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Beer, E-mail: beerbs5@rediffmail.com [Defence R and D Establishment, Jhansi Road, Gwalior, M.P 474002 (India); Mahato, T.H.; Srivastava, A.K.; Prasad, G.K.; Ganesan, K.; Vijayaraghavan, R. [Defence R and D Establishment, Jhansi Road, Gwalior, M.P 474002 (India); Jain, Rajeev [School of Studies in Chemistry, Jiwaji University, Gwalior, M.P. 474011 (India)

    2011-06-15

    Degradation of the king of chemical warfare agent, 2 2' dichloro diethyl sulphide (HD), and its simulant 2 chloroethyl ethyl sulphide (CEES) were investigated on the surface of porous vanadium oxide nanotubes at room temperature (30 {+-} 2{sup Degree-Sign }C ). Reaction kinetics was monitored by GC-FID technique and the reaction products were characterized by GC-MS. Data indicates that HD degraded faster relative to CEES inside the solid decontaminant compared to the reported liquid phase degradation of CEES and HD. Data explores the role of hydrolysis, elimination and oxidation reactions in the detoxification of HD and CEES and the first order rate constant and t{sub 1/2} were calculated to be 0.026 h{sup -1}, 26.6 h for CEES and 0.052 h{sup -1}, 13.24 h for HD. In this report faster degradation of HD compared to CEES was explained on the basis of porous structure.

  15. Atmospheric pressure chemical vapour deposition of the nitrides and oxynitrides of vanadium, titanium and chromium

    International Nuclear Information System (INIS)

    Elwin, G.S.

    1999-01-01

    A study has been made into the atmospheric pressure chemical vapour deposition of nitrides and oxynitrides of vanadium, titanium and chromium. Vanadium tetrachloride, vanadium oxychloride, chromyl chloride and titanium tetrachloride have been used as precursors with ammonia, at different flow conditions and temperatures. Vanadium nitride, vanadium oxynitride, chromium oxynitride, titanium/vanadium nitride and titanium/chromium oxynitride have been deposited as thin films on glass. The APCVD reaction of VCl 4 and ammonia leads to films with general composition VN x O y . By raising the ammonia concentration so that it is in excess (0.42 dm 3 min -1 VCl 4 with 1.0 dm 3 min -1 NH 3 at 500 deg. C) a film has been deposited with the composition VN 0.8 O 0.2 . Further investigation discovered similar elemental compositions could be reached by deposition at 350 deg. C (0.42 dm 3 min -1 VCl 4 with 0.5 dm 3 min -1 NH 3 ), followed by annealing at 650 deg. C, and cooled under a flow of ammonia. Only films formed below 400 deg. C were found to contain carbon or chlorine ( 3 and ammonia also lead to films of composition VN x O y the oxygen to nitrogen ratios depending on the deposition conditions. The reaction Of VOCl 3 (0.42 dm 3 min -1 ) and ammonia (0.2 dm 3 min -1 ) at 500 deg. C lead to a film of composition VN 0. 47O 1.06 . The reaction of VOCl 3 (0.42 dm 3 min -1 ) and ammonia (0.5 dm 3 min -1 ) at 650 deg. C lead to a film of composition VN 0.63 O 0.41 . The reaction of chromyl chloride with excess ammonia led to the formation of chromium oxide (Cr 2 O 3 ) films. Mixed metal films were prepared from the reactions of vanadium tetrachloride, titanium tetrachloride and ammonia to prepare V x Ti y N z and chromyl chloride, titanium tetrachloride and ammonia to form TiCr x O y N z . Both reactions produced the intended mixed coating but it was found that the vanadium / titanium nitride contained around 10 % vanadium whatever the conditions used. Oxygen contamination

  16. Review of Zinc Oxide Thin Films

    Science.gov (United States)

    2014-12-23

    remains more difficult [12, 13].    Recent  research on n‐type extrinsic doping with group  III elements  revealed  that  Aluminium   (Al), Boron (B) and...tuned by  alloying  with magnesium oxide or cadmium oxide   from 7.9 eV to 2.3 eV,  spanning from deep ultraviolet (UV) to visible regions of the...88].    Doping  to  increase  and/  or  control  n‐type  electrical  conductivity is commonly done with group III elements such as  aluminium , boron

  17. Growth and thermal oxidation of Ru and ZrO2 thin films as oxidation protective layers

    NARCIS (Netherlands)

    Coloma Ribera, R.

    2017-01-01

    This thesis focuses on the study of physical and chemical processes occurring during growth and thermal oxidation of Ru and ZrO2 thin films. Acting as oxidation resistant capping materials to prevent oxidation of layers underneath, these films have several applications, i.e., in microelectronics

  18. Electronic properties of thermally formed thin iron oxide films

    International Nuclear Information System (INIS)

    Wielant, J.; Goossens, V.; Hausbrand, R.; Terryn, H.

    2007-01-01

    The oxide layer, present between an organic coating and the substrate, guarantees adhesion of the coating and plays a determinating role in the delamination rate of the organic coating. The purpose of this study is to compare the resistive and semiconducting properties of thermal oxides formed on steel in two different atmospheres at 250 deg. C: an oxygen rich atmosphere, air, and an oxygen deficient atmosphere, N 2 . In N 2 , a magnetite layer grows while in air a duplex oxide film forms composed by an inner magnetite layer and a thin outer hematite scale. The heat treatment for different amounts of time at high temperature was used as method to sample the thickness variation and change in electronic and semiconducting properties of the thermal oxide layers. Firstly, linear voltammetric measurements were performed to have a first insight in the electrochemical behavior of the thermal oxides in a borate buffer solution. Electrochemical impedance spectroscopy in the same buffer combined with the Mott-Schottky analysis were used to determine the semiconducting properties of the thermal oxides. By spectroscopic ellipsometry (SE) and atomic force microscopy (AFM), respectively, the thickness and roughness of the oxide layers were determined supporting the physical interpretation of the voltammetric and EIS data. These measurements clearly showed that oxide layers with different constitution, oxide resistance, flatband potential and doping concentration can be grown by changing the atmosphere

  19. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  20. Synthesis of tin oxide nanoparticle film by cathodic electrodeposition.

    Science.gov (United States)

    Kim, Seok; Lee, Hochun; Park, Chang Min; Jung, Yongju

    2012-02-01

    Three-dimensional SnO2 nanoparticle films were deposited onto a copper substrate by cathodic electrodeposition in a nitric acid solution. A new formation mechanism for SnO2 films is proposed based on the oxidation of Sn2+ ion to Sn4+ ion by NO+ ion and the hydrolysis of Sn4+. The particle size of SnO2 was controlled by deposition potential. The SnO2 showed excellent charge capacity (729 mAh/g) at a 0.2 C rate and high rate capability (460 mAh/g) at a 5 C rate.

  1. Nanoporous zinc oxide films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Ghimpu, L.; Lupan, O.; Popescu, L.; Tiginyanu, I.M.

    2011-01-01

    In this paper we demonstrate an inexpensive approach for the fabrication of nanoporous zinc oxide films by using magnetron sputtering. Study of the structural properties proves the crystallographic perfection of porous nanostructures and the possibility of its controlling by adjusting the technological parameters in the growth process. The XRD pattern of nanoporous ZnO films exhibits high intensity of the peaks relative to the background signal which is indicative of the ZnO hexagonal phase and a good crystallinity of the samples grown by magnetron sputtering.

  2. Superconducting oxide thin films by ion beam sputtering

    International Nuclear Information System (INIS)

    Kobrin, P.H.; DeNatale, J.F.; Housley, R.M.; Flintoff, J.F.; Harker, A.B.

    1987-01-01

    Superconducting thin films of ternary copper oxides from the Y-Ba-Cu-O and La-Sr-Cu-O systems have been deposited by ion beam sputtering of ceramic targets. Crystallographic orientation of the polycrystalline films has been shown to vary with substrate identity, deposition temperature and annealing temperature. The onset of the superconductive transition occurs near 90K in the Y-Ba-Cu-O system. Fe impurities of < 0.2% have been found to inhibit the superconducting transition, probably by migrating to the grain boundaries

  3. Tin oxide transparent thin-film transistors

    International Nuclear Information System (INIS)

    Presley, R E; Munsee, C L; Park, C-H; Hong, D; Wager, J F; Keszler, D A

    2004-01-01

    A SnO 2 transparent thin-film transistor (TTFT) is demonstrated. The SnO 2 channel layer is deposited by RF magnetron sputtering and then rapid thermal annealed in O 2 at 600 deg. C. The TTFT is highly transparent, and enhancement-mode behaviour is achieved by employing a very thin channel layer (10-20 nm). Maximum field-effect mobilities of 0.8 cm 2 V -1 s -1 and 2.0 cm 2 V -1 s -1 are obtained for enhancement- and depletion-mode devices, respectively. The transparent nature and the large drain current on-to-off ratio of 10 5 associated with the enhancement-mode behaviour of these devices may prove useful for novel gas-sensor applications

  4. Oxide films in laser additive manufactured Inconel 718

    International Nuclear Information System (INIS)

    Zhang, Y.N.; Cao, X.; Wanjara, P.; Medraj, M.

    2013-01-01

    A continuous-wave 5 kW fiber laser welding system was used in conduction mode to deposit Inconel® alloy 718 (IN718) by employing filler wire on as-serviced IN718 parent material (PM) substrates. The direct laser deposited (DLD) coupons and as-serviced IN718 PM were then evaluated through tensile testing. To understand the failure mechanisms, the tensile fracture surfaces of the as-serviced IN718 PM, DLD and DLD-PM samples were analyzed using scanning electron microscopy. The fracture surfaces revealed the presence of both Al 2 O 3 and Cr 2 O 3 films, although the latter was reasoned to be the main oxide in IN718. Both the experimental observations and thermodynamic analysis indicated that oxidation of some alloying elements in IN718 cannot be completely avoided during manufacturing, whether in the liquid state under vacuum (for casting, the electron beam melting, welding and/or deposition) or with inert gas protection (for welding or laser deposition). The exposed surface of the oxide film on the fracture surface has poor wetting with the metal and thus can constitute a lack of bonding or a crack with either the metal and/or another non-wetted side of the oxide film. On the other hand, the wetted face of the oxide film has good atom-to-atom contact with the metal and may nucleate some intermetallic compounds, such as Laves, Ni 3 Nb-δ, Nb-rich MC and γ′ compounds. The potential of their nucleation on Cr 2 O 3 was assessed using planar disregistry. Coherent planes were found between these intermetallics and Cr 2 O 3

  5. Mn-implanted, polycrystalline indium tin oxide and indium oxide films

    International Nuclear Information System (INIS)

    Scarlat, Camelia; Vinnichenko, Mykola; Xu Qingyu; Buerger, Danilo; Zhou Shengqiang; Kolitsch, Andreas; Grenzer, Joerg; Helm, Manfred; Schmidt, Heidemarie

    2009-01-01

    Polycrystalline conducting, ca. 250 nm thick indium tin oxide (ITO) and indium oxide (IO) films grown on SiO 2 /Si substrates using reactive magnetron sputtering, have been implanted with 1 and 5 at.% of Mn, followed by annealing in nitrogen or in vacuum. The effect of the post-growth treatment on the structural, electrical, magnetic, and optical properties has been studied. The roughness of implanted films ranges between 3 and 15 nm and XRD measurements revealed a polycrystalline structure. A positive MR has been observed for Mn-implanted and post-annealed ITO and IO films. It has been interpreted by considering s-d exchange. Spectroscopic ellipsometry has been used to prove the existence of midgap electronic states in the Mn-implanted ITO and IO films reducing the transmittance below 80%.

  6. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    Energy Technology Data Exchange (ETDEWEB)

    Horak, P., E-mail: phorak@ujf.cas.cz [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Řež (Czech Republic); Bejsovec, V.; Vacik, J.; Lavrentiev, V. [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Řež (Czech Republic); Vrnata, M. [Department of Physics and Measurements, The University of Chemistry and Technology, Prague, Technická 5, 166 28 Prague 6 (Czech Republic); Kormunda, M. [Department of Physics, Jan Evangelista Purkyně University in Ústí nad Labem, České mládeže 8, 400 96 Ústí nad Labem (Czech Republic); Danis, S. [Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague 2 (Czech Republic)

    2016-12-15

    Highlights: • A rapid oxidation process of thin copper films. • Sheet resistance up to 10{sup 9} Ω/◊. • Mixed oxide phase at 200 °C with significant hydroxide presence. • Gas sensing response to 1000 ppm of hydrogen and methanol vapours. • Increased sensitivity with Pd and Au catalyst to hydrogen and methanol, respectively. - Abstract: Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C–600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C–600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu{sub 2}O phase was identified. However, the oxidation at 200 °C led to a more complicated composition − in the depth Cu{sub 2}O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH){sub 2}. A limited amount of Cu{sub 2}O was also found in samples annealed at 600 °C. The sheet resistance R{sub S} of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing R{sub S} was measured in the range 2.64 MΩ/□–2.45 GΩ/□. The highest R{sub S} values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the {sup 16}O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed

  7. Degradation of zinc oxide thin films in aqueous environment. Pt. II. Coated films

    Energy Technology Data Exchange (ETDEWEB)

    Rosa, L. de; Mitton, D.B.; Monetta, T.; Bellucci, F. [Naples Univ. (Italy). Dept. of Materials and Production Engineering; Springer, J. [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), Stuttgart (Germany)

    2001-12-01

    cn Part I of this research, the degradation mechanism of two different bare ZnO thin films was assessed. Degradation of the electrical properties of ZnO as well as changes in morphology were observed for both films. In the current paper, the degradation of zinc oxide thin films coated with protective acrylic paint is addressed during exposure to (i) an aqueous 3.5% NaCl solution at 85 C and (ii) a standard damp heat test at 85% R.H. and 85 C. Electrical and electrochemical techniques were employed to monitor zinc oxide degradation during exposure to the test environments. Electrochemical Impedance Spectroscopy was employed to investigate the delamination phenomena at the ZnO/coating interface and a simple equivalent circuit was developed to quantitatively measure the delamination ratio. The effect of different silane based adhesion promoters (glycidil-oxypropyl-trimethoxy-silane and aminopropyl-trimethoxy-silane) was also investigated. (orig.)

  8. Optical scattering characteristic of annealed niobium oxide films

    International Nuclear Information System (INIS)

    Lai Fachun; Li Ming; Wang Haiqian; Hu Hailong; Wang Xiaoping; Hou, J.G.; Song Yizhou; Jiang Yousong

    2005-01-01

    Niobium oxide (Nb 2 O 5 ) films with thicknesses ranging from 200 to 1600 nm were deposited on fused silica at room temperature by low frequency reactive magnetron sputtering system. In order to study the optical losses resulting from the microstructures, the films with 500 nm thickness were annealed at temperatures between 600 and 1100 deg. C, and films with thicknesses from 200 to 1600 nm were annealed at 800 deg. C. Scanning electron microscopy and atomic force microscopy images show that the root mean square of surface roughness, the grain size, voids, microcracks, and grain boundaries increase with increasing both the annealing temperature and the thickness. Correspondingly, the optical transmittance and reflectance decrease, and the optical loss increases. The mechanisms of the optical losses are discussed. The results suggest that defects in the volume and the surface roughness should be the major source for the optical losses of the annealed films by causing pronounced scattering. For samples with a determined thickness, there is a critical annealing temperature, above which the surface scattering contributes to the major optical losses. In the experimental scope, for the films annealed at temperatures below 900 deg. C, the major optical losses resulted from volume scattering. However, surface roughness was the major source for the optical losses when the 500-nm films were annealed at temperatures above 900 deg. C

  9. Indium tin oxide films prepared via wet chemical route

    International Nuclear Information System (INIS)

    Legnani, C.; Lima, S.A.M.; Oliveira, H.H.S.; Quirino, W.G.; Machado, R.; Santos, R.M.B.; Davolos, M.R.; Achete, C.A.; Cremona, M.

    2007-01-01

    In this work, indium tin oxide (ITO) films were prepared using a wet chemical route, the Pechini method. This consists of a polyesterification reaction between an α-hydroxicarboxylate complex (indium citrate and tin citrate) with a polyalcohol (ethylene glycol) followed by a post annealing at 500 deg. C. A 10 at.% of doping of Sn 4+ ions into an In 2 O 3 matrix was successfully achieved through this method. In order to characterize the structure, the morphology as well as the optical and electrical properties of the produced ITO films, they were analyzed using different experimental techniques. The obtained films are highly transparent, exhibiting transmittance of about 85% at 550 nm. They are crystalline with a preferred orientation of [222]. Microscopy discloses that the films are composed of grains of 30 nm average size and 0.63 nm RMS roughness. The films' measured resistivity, mobility and charge carrier concentration were 5.8 x 10 -3 Ω cm, 2.9 cm 2 /V s and - 3.5 x 10 20 /cm 3 , respectively. While the low mobility value can be related to the small grain size, the charge carrier concentration value can be explained in terms of the high oxygen concentration level resulting from the thermal treatment process performed in air. The experimental conditions are being refined to improve the electrical characteristics of the films while good optical, chemical, structural and morphological qualities already achieved are maintained

  10. Structural and Electrochemical Properties of Lithium Nickel Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Gyu-bong Cho

    2014-01-01

    Full Text Available LiNiO2 thin films were fabricated by RF magnetron sputtering. The microstructure of the films was determined by X-ray diffraction and field-emission scanning electron microscopy. The electrochemical properties were investigated with a battery cycler using coin-type half-cells. The LiNiO2 thin films annealed below 500°C had the surface carbonate. The results suggest that surface carbonate interrupted the Li intercalation and deintercalation during charge/discharge. Although the annealing process enhanced the crystallization of LiNiO2, the capacity did not increase. When the annealing temperature was increased to 600°C, the FeCrNiO4 oxide phase was generated and the discharge capacity decreased due to an oxygen deficiency in the LiNiO2 thin film. The ZrO2-coated LiNiO2 thin film provided an improved discharge capacity compared to bare LiNiO2 thin film suggesting that the improved electrochemical characteristic may be attributed to the inhibition of surface carbonate by ZrO2 coating layer.

  11. Vanadium Pentoxide Nanobelt-Reduced Graphene Oxide Nanosheet Composites as High-Performance Pseudocapacitive Electrodes: ac Impedance Spectroscopy Data Modeling and Theoretical Calculations

    Directory of Open Access Journals (Sweden)

    Sanju Gupta

    2016-07-01

    Full Text Available Graphene nanosheets and graphene nanoribbons, G combined with vanadium pentoxide (VO nanobelts (VNBs and VNBs forming GVNB composites with varying compositions were synthesized via a one-step low temperature facile hydrothermal decomposition method as high-performance electrochemical pseudocapacitive electrodes. VNBs from vanadium pentoxides (VO are formed in the presence of graphene oxide (GO, a mild oxidant, which transforms into reduced GO (rGOHT, assisting in enhancing the electronic conductivity coupled with the mechanical robustness of VNBs. From electron microscopy, surface sensitive spectroscopy and other complementary structural characterization, hydrothermally-produced rGO nanosheets/nanoribbons are decorated with and inserted within the VNBs’ layered crystal structure, which further confirmed the enhanced electronic conductivity of VNBs. Following the electrochemical properties of GVNBs being investigated, the specific capacitance Csp is determined from cyclic voltammetry (CV with a varying scan rate and galvanostatic charging-discharging (V–t profiles with varying current density. The rGO-rich composite V1G3 (i.e., VO/GO = 1:3 showed superior specific capacitance followed by VO-rich composite V3G1 (VO/GO = 3:1, as compared to V1G1 (VO/GO = 1:1 composite, besides the constituents, i.e., rGO, rGOHT and VNBs. Composites V1G3 and V3G1 also showed excellent cyclic stability and a capacitance retention of >80% after 500 cycles at the highest specific current density. Furthermore, by performing extensive simulations and modeling of electrochemical impedance spectroscopy data, we determined various circuit parameters, including charge transfer and solution resistance, double layer and low frequency capacitance, Warburg impedance and the constant phase element. The detailed analyses provided greater insights into physical-chemical processes occurring at the electrode-electrolyte interface and highlighted the comparative performance of

  12. Microstructure and protection characteristics of the naturally formed oxide films on Mg–xZn alloys

    International Nuclear Information System (INIS)

    Song, Yingwei; Han, En-Hou; Dong, Kaihui; Shan, Dayong; Yim, Chang Dong; You, Bong Sun

    2013-01-01

    Highlights: •The oxide films on Mg–xZn alloys consist of similar chemical composition. •The higher Zn content results in the thicker but higher defect of the oxide films. •The oxide films exhibit different protection performance under various potentials. -- Abstract: The naturally formed oxide films on Mg–2Zn and Mg–5Zn alloys were investigated by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. The oxide films on the both alloys present a similar chemical composition, consisting of surface layer of basic magnesium carbonate and MgO following with MgO and ZnO, but the oxide film on Mg–5Zn is thicker and contains more defects. The protection performance of the oxide film on Mg–5Zn is worse under open circuit potential but better in a suitable anodic potential scope compared with that on Mg–2Zn alloy

  13. Effect of vanadium compounds on acid phosphatase activity.

    Science.gov (United States)

    Vescina, C M; Sálice, V C; Cortizo, A M; Etcheverry, S B

    1996-01-01

    The direct effect of different vanadium compounds on acid phosphatase (ACP) activity was investigated. Vanadate and vanadyl but not pervanadate inhibited the wheat germ ACP activity. These vanadium derivatives did not alter the fibroblast Swiss 3T3 soluble fraction ACP activity. Using inhibitors of tyrosine phosphatases (PTPases), the wheat germ ACP was partially characterized as a PTPase. This study suggests that the inhibitory ability of different vanadium derivatives to modulate ACP activity seems to depend on the geometry around the vanadium atom more than on the oxidation state. Our results indicate a correlation between the PTPase activity and the sensitivity to vanadate and vanadyl cation.

  14. Reduction of graphene oxide and its effect on square resistance of reduced graphene oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Zhaoxia; Zhou, Yin; Li, Guang Bin; Wang, Shaohong; Wang, Mei Han; Hu, Xiaodan; Li, Siming [Liaoning Province Key Laboratory of New Functional Materials and Chemical Technology, School ofMechanical Engineering, Shenyang University, Shenyang (China)

    2015-06-15

    Graphite oxide was prepared via the modified Hummers’ method and graphene via chemical reduction. Deoxygenation efficiency of graphene oxide was compared among single reductants including sodium borohydride, hydrohalic acids, hydrazine hydrate, and vitamin C. Two-step reduction of graphene oxide was primarily studied. The reduced graphene oxide was characterized by XRD, TG, SEM, XPS, and Raman spectroscopy. Square resistance was measured as well. Results showed that films with single-step N2H4 reduction have the best transmittance and electrical conductivity with square resistance of ~5746 Ω/sq at 70% transmittance. This provided an experimental basis of using graphene for electronic device applications.

  15. Influence of oxidation state on the pH dependence of hydrous iridium oxide films

    International Nuclear Information System (INIS)

    Steegstra, Patrick; Ahlberg, Elisabet

    2012-01-01

    Many electrochemical reactions taking place in aqueous solution consume or produce protons. The pH in the diffusion layer can therefore be significantly altered during the reaction and there is a need for in situ pH measurements tracing this near surface pH. In the present paper the rotating ring disc technique was used to measure near surface pH changes during oxygen reduction, utilising hydrous iridium oxide as the pH sensing probe. Before such experiments a good understanding of the pH sensing properties of these films is required and the impact of the oxidation state of the film on the pH sensing properties was investigated as well as the influence of solution redox species. The pH sensitivity (depicted by dE/dpH) was found to depend on the average oxidation state of the film in a manner resembling the cyclic voltammetry response. In all cases the pH response is “supernernstian” with more than one proton per electron. The origin of this behaviour is discussed in the context of acid-base properties of the film and the existence of both hydrous and anhydrous oxide phases. The pH response depends also on the redox properties of the solution but can be optimised for various purposes by conditioning the film at different potentials. This was clearly illustrated by adding hydrogen peroxide, an intermediate in the oxygen reduction reaction, to the solution. It was shown that hydrous iridium oxide can be used as a reliable in situ pH sensor provided that care is taken to optimise the oxidation state of the film.

  16. Modification of graphene oxide films by radiofrequency N2 plasma

    Science.gov (United States)

    Neustroev, E. P.; Burtseva, E. K.; Soloviev, B. D.; Prokopiev, A. R.; Popov, V. I.; Timofeev, V. B.

    2018-04-01

    The effect of treatment in nitrogen plasma on the properties of partially reduced graphene oxide (rGO) was studied. A comparison is made between two different sample locations in the reaction chamber. It is shown that in the case when rGO films were turned towards the inductor of the plasma system, the etching rate is much higher. Effective nitrogen functionalization of rGO was established in the second position, when the rGO films were turned in the opposite direction. In this case, the nitrogen content increases to 5 at% of the initial value. The change in the current-voltage characteristics is observed under illumination, which is independent of the wavelength. On and off daylight changes the resistance to 30% of the initial value. The magnitude of the photocurrent increases depending on the applied voltage. The effect is most noticeable for thin rGO films 10-15 nm in thickness.

  17. Intrinsic defect oriented visible region absorption in zinc oxide films

    Science.gov (United States)

    Rakhesh, V.; Shankar, Balakrishnan

    2018-05-01

    Zinc Oxide films were deposited on the glass substrate using vacuum arc sputtering technology. Films were prepared in oxygen ambience for 10mA and 15 mA deposition current separately. The UV-Visible spectroscopy of the samples showed that both samples possess sharp absorption near 3.5eV which is the characteristic band gap absorption energy of ZnO films. The absorption coefficient were calculated for the samples and the (αℎϑ)2 vs energy plot is drawn. The plot suggested that in addition to the sharp band edge absorption, the sample prepared at 10mA deposition current showed sharp absorption edge near 1.51eV and that at 15 mA showed absorption edge near 1.47eV. This refers to the presence of an intrinsic defect level which is likely to be deep in the band gap.

  18. Nanoporous cerium oxide thin film for glucose biosensor.

    Science.gov (United States)

    Saha, Shibu; Arya, Sunil K; Singh, S P; Sreenivas, K; Malhotra, B D; Gupta, Vinay

    2009-03-15

    Nanoporous cerium oxide (CeO(2)) thin film deposited onto platinum (Pt) coated glass plate using pulsed laser deposition (PLD) has been utilized for immobilization of glucose oxidase (GOx). Atomic force microscopy studies reveal the formation of nanoporous surface morphology of CeO(2) thin film. Response studies carried out using differential pulsed voltammetry (DPV) and optical measurements show that the GOx/CeO(2)/Pt bio-electrode shows linearity in the range of 25-300 mg/dl of glucose concentration. The low value of Michaelis-Menten constant (1.01 mM) indicates enhanced enzyme affinity of GOx to glucose. The observed results show promising application of the nanoporous CeO(2) thin film for glucose sensing application without any surface functionalization or mediator.

  19. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    International Nuclear Information System (INIS)

    Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

    2009-10-01

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  20. Combinatorial study of zinc tin oxide thin-film transistors

    Science.gov (United States)

    McDowell, M. G.; Sanderson, R. J.; Hill, I. G.

    2008-01-01

    Groups of thin-film transistors using a zinc tin oxide semiconductor layer have been fabricated via a combinatorial rf sputtering technique. The ZnO :SnO2 ratio of the film varies as a function of position on the sample, from pure ZnO to SnO2, allowing for a study of zinc tin oxide transistor performance as a function of channel stoichiometry. The devices were found to have mobilities ranging from 2to12cm2/Vs, with two peaks in mobility in devices at ZnO fractions of 0.80±0.03 and 0.25±0.05, and on/off ratios as high as 107. Transistors composed predominantly of SnO2 were found to exhibit light sensitivity which affected both the on/off ratios and threshold voltages of these devices.

  1. Manganese oxide nanowires, films, and membranes and methods of making

    Science.gov (United States)

    Suib, Steven Lawrence [Storrs, CT; Yuan, Jikang [Storrs, CT

    2008-10-21

    Nanowires, films, and membranes comprising ordered porous manganese oxide-based octahedral molecular sieves, and methods of making, are disclosed. A single crystal ultra-long nanowire includes an ordered porous manganese oxide-based octahedral molecular sieve, and has an average length greater than about 10 micrometers and an average diameter of about 5 nanometers to about 100 nanometers. A film comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is stacked on a surface of a substrate, wherein the nanowires of each layer are substantially axially aligned. A free standing membrane comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is aggregately stacked, and wherein the nanowires of each layer are substantially axially aligned.

  2. Tungsten oxide nanowires grown on amorphous-like tungsten films

    International Nuclear Information System (INIS)

    Dellasega, D; Pezzoli, A; Russo, V; Passoni, M; Pietralunga, S M; Nasi, L; Conti, C; Vahid, M J; Tagliaferri, A

    2015-01-01

    Tungsten oxide nanowires have been synthesized by vacuum annealing in the range 500–710 °C from amorphous-like tungsten films, deposited on a Si(100) substrate by pulsed laser deposition (PLD) in the presence of a He background pressure. The oxygen required for the nanowires formation is already adsorbed in the W matrix before annealing, its amount depending on deposition parameters. Nanowire crystalline phase and stoichiometry depend on annealing temperature, ranging from W_1_8O_4_9-Magneli phase to monoclinic WO_3. Sufficiently long annealing induces the formation of micrometer-long nanowires, up to 3.6 μm with an aspect ratio up to 90. Oxide nanowire growth appears to be triggered by the crystallization of the underlying amorphous W film, promoting their synthesis at low temperatures. (paper)

  3. Photocatalytic oxide films in the built environment

    Science.gov (United States)

    Österlund, Lars; Topalian, Zareh

    2014-11-01

    The possibility to increase human comfort in buildings is a powerful driving force for the introduction of new technology. Among other things our sense of comfort depends on air quality, temperature, lighting level, and the possibility of having visual contact between indoors and outdoors. Indeed there is an intimate connection between energy, comfort, and health issues in the built environment, leading to a need for intelligent building materials and green architecture. Photocatalytic materials can be applied as coatings, filters, and be embedded in building materials to provide self-cleaning, antibacterial, air cleaning, deodorizing, and water cleaning functions utilizing either solar light or artificial illumination sources - either already present in buildings, or by purposefully designed luminaries. Huge improvements in indoor comfort can thus be made, and also alleviate negative health effects associated with buildings, such as the sick-house syndrome. At the same time huge cost savings can be made by reducing maintenance costs. Photocatalytic oxides can be chemically modified by changing their acid-base surface properties, which can be used to overcome deactivation problems commonly encountered for TiO2 in air cleaning applications. In addition, the wetting properties of oxides can be tailored by surface chemical modifications and thus be made e.g. oleophobic and water repellent. Here we show results of surface acid modified TiO2 coatings on various substrates by means of photo-fixation of surface sulfate species by a method invented in our group. In particular, we show that such surface treatments of photocatalytic concrete made by mixing TiO2 nanoparticles in reactive concrete powders result in concrete surfaces with beneficial self-cleaning properties. We propose that such approaches are feasible for a number of applications in the built environment, including glass, tiles, sheet metals, plastics, etc.

  4. Photocatalytic oxide films in the built environment

    International Nuclear Information System (INIS)

    Österlund, Lars; Topalian, Zareh

    2014-01-01

    The possibility to increase human comfort in buildings is a powerful driving force for the introduction of new technology. Among other things our sense of comfort depends on air quality, temperature, lighting level, and the possibility of having visual contact between indoors and outdoors. Indeed there is an intimate connection between energy, comfort, and health issues in the built environment, leading to a need for intelligent building materials and green architecture. Photocatalytic materials can be applied as coatings, filters, and be embedded in building materials to provide self-cleaning, antibacterial, air cleaning, deodorizing, and water cleaning functions utilizing either solar light or artificial illumination sources – either already present in buildings, or by purposefully designed luminaries. Huge improvements in indoor comfort can thus be made, and also alleviate negative health effects associated with buildings, such as the sick-house syndrome. At the same time huge cost savings can be made by reducing maintenance costs. Photocatalytic oxides can be chemically modified by changing their acid-base surface properties, which can be used to overcome deactivation problems commonly encountered for TiO 2 in air cleaning applications. In addition, the wetting properties of oxides can be tailored by surface chemical modifications and thus be made e.g. oleophobic and water repellent. Here we show results of surface acid modified TiO 2 coatings on various substrates by means of photo-fixation of surface sulfate species by a method invented in our group. In particular, we show that such surface treatments of photocatalytic concrete made by mixing TiO 2 nanoparticles in reactive concrete powders result in concrete surfaces with beneficial self-cleaning properties. We propose that such approaches are feasible for a number of applications in the built environment, including glass, tiles, sheet metals, plastics, etc

  5. Electrical Switching in Thin Film Structures Based on Transition Metal Oxides

    Directory of Open Access Journals (Sweden)

    A. Pergament

    2015-01-01

    Full Text Available Electrical switching, manifesting itself in the nonlinear current-voltage characteristics with S- and N-type NDR (negative differential resistance, is inherent in a variety of materials, in particular, transition metal oxides. Although this phenomenon has been known for a long time, recent suggestions to use oxide-based switching elements as neuristor synapses and relaxation-oscillation circuit components have resumed the interest in this area. In the present review, we describe the experimental facts and theoretical models, mainly on the basis of the Mott transition in vanadium dioxide as a model object, of the switching effect with special emphasis on the emerging applied potentialities for oxide electronics.

  6. Glancing angle x-ray studies of oxide films

    International Nuclear Information System (INIS)

    Davenport, A.J.; Isaacs, H.S.

    1989-01-01

    High brightness synchrotron radiation incident at glancing angles has been used to study inhibiting species present in low concentrations in oxide films on aluminum. Glancing incident angle fluorescence measurements give surface-sensitive information on the valence state of elements from the shape of the x-ray absorption edge. Angle-resolved measurements show the depth distribution of the species present. 15 refs., 4 figs

  7. Bilayered Oxide thin films for transparent electrode application

    Science.gov (United States)

    Dutta, Titas; Narayan, Jagdish

    2008-10-01

    Ga doped ZnO films with electrical and optical properties comparable to indium tin oxide (ITO) is a promising candidate for transparent conducting oxides (TCOs) because of its superior stability in hydrogen environment, benign nature and relatively inexpensive supply. However, ZnO based TCO films suffer from low work function, which is a critical parameter for device applications. We report here the growth of a novel bilayered structure consisting of very thin (few monolayers) ITO, MoOx layer on Zn0.95Ga0.05O film for transparent electrode applications by using pulsed laser deposition technique at different temperatures and oxygen partial pressure. The characteristics of the ITO film and the heterostructure have been investigated in detail using XRD, TEM, XPS, and electrical and optical property measurements. It is envisaged that the overall transmittance and the resistivity are dictated by the thicker layer of ZnGa0.05O beneath the ITO layer. Hence, this study is aimed to improve the surface characteristics without affecting the overall transmittance and sheet resistance. This will enhance the transport of the carriers across the heterojunction in the device, thus, resulting in the increase in device efficiency.

  8. The vanadium/oxygen system in the analysis of sodium for oxygen

    International Nuclear Information System (INIS)

    Walker, J.A.J.; Price, W.B.

    1981-05-01

    An investigation of the V-O-Na system at 1023 K is described for oxygen in sodium contents of 5 to 25 ppm. Electron spectroscopy combined with depth profiling is used to determine the vanadium/oxygen ratios inwards from the surface of vanadium foil and these ratios are compared with theoretical predictions. The validity of the vanadium wire technique as an analytical method is examined and a model for the vanadium oxidation is suggested. (author)

  9. Hafnium carbide formation in oxygen deficient hafnium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rodenbücher, C. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); Hildebrandt, E.; Sharath, S. U.; Kurian, J.; Komissinskiy, P.; Alff, L. [Technische Universität Darmstadt, Institute of Materials Science, 64287 Darmstadt (Germany); Szot, K. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); University of Silesia, A. Chełkowski Institute of Physics, 40-007 Katowice (Poland); Breuer, U. [Forschungszentrum Jülich GmbH, Central Institute for Engineering, Electronics and Analytics (ZEA-3), 52425 Jülich (Germany); Waser, R. [Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-7), JARA-FIT, 52425 Jülich (Germany); RWTH Aachen, Institute of Electronic Materials (IWE 2), 52056 Aachen (Germany)

    2016-06-20

    On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO{sub 2−x}) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC{sub x}) at the surface during vacuum annealing at temperatures as low as 600 °C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfC{sub x} surface layer related to a transformation from insulating into metallic state is monitored in situ. In contrast, for fully stoichiometric HfO{sub 2} thin films prepared and measured under identical conditions, the formation of HfC{sub x} was not detectable suggesting that the enhanced adsorption of carbon oxides on oxygen deficient films provides a carbon source for the carbide formation. This shows that a high concentration of oxygen vacancies in carbon contaminated hafnia lowers considerably the formation energy of hafnium carbide. Thus, the presence of a sufficient amount of residual carbon in resistive random access memory devices might lead to a similar carbide formation within the conducting filaments due to Joule heating.

  10. Diode laser heat treatment of lithium manganese oxide films

    International Nuclear Information System (INIS)

    Pröll, J.; Kohler, R.; Mangang, A.; Ulrich, S.; Bruns, M.; Seifert, H.J.; Pfleging, W.

    2012-01-01

    The crystallization of lithium manganese oxide thin films prepared by radio frequency magnetron sputtering on stainless steel substrates under 10 Pa argon pressure is demonstrated by a laser annealing technique. Laser annealing processes were developed as a function of annealing time and temperature with the objective to form an electrochemically active lithium manganese oxide cathode. It is demonstrated, that laser annealing with 940 nm diode laser radiation and an annealing time of 2000 s at 600 °C delivers appropriate parameters for formation of a crystalline spinel-like phase. Characteristic features of this phase could be detected via Raman spectroscopy, showing the characteristic main Raman band at 627 cm -1 . Within cyclic voltammetric measurements, the two characteristic redox pairs for spinel lithium manganese oxide in the 4 V region could be detected, indicating that the film was well-crystallized and de-/intercalation processes were reversible. Raman post-analysis of a cycled cathode showed that the spinel-like structure was preserved within the cycling process but mechanical degradation effects such as film cracking were observed via scanning electron microscopy. Typical features for the formation of an additional surface reaction layer could be detected using X-ray photoelectron spectroscopy.

  11. Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

    Science.gov (United States)

    Sarkar, Suman; Kundu, Sarathi

    2018-04-01

    Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

  12. Effect of mass density on surface morphology of electrodeposited manganese oxide films

    Science.gov (United States)

    Singh, Avtar; Kumar, Davinder; Thakur, Anup; Kaur, Raminder

    2018-05-01

    This work focus on high surface area morphology of manganese oxide films which are currently required for electrochemical capacitor electrode to enhance their performance. Electrodeposition of manganese oxide films was carried out using Chronoamperometry for different deposition time ranging from 30 to 120 sec. Cronoamperomertic I-T integrated data have been used to analyze active mass of all electrodeposited films. Morphological study of the deposited films with different mass was carried out through scanning electron microscopy. Film deposited for 30 sec time show highest porous morphology than others. Manganese oxide films with high porosity are suitable for electrochemical capacitor electrode.

  13. Strengthening of Ceramic-based Artificial Nacre via Synergistic Interactions of 1D Vanadium Pentoxide and 2D Graphene Oxide Building Blocks

    Science.gov (United States)

    Knöller, Andrea; Lampa, Christian P.; Cube, Felix von; Zeng, Tingying Helen; Bell, David C.; Dresselhaus, Mildred S.; Burghard, Zaklina; Bill, Joachim

    2017-01-01

    Nature has evolved hierarchical structures of hybrid materials with excellent mechanical properties. Inspired by nacre’s architecture, a ternary nanostructured composite has been developed, wherein stacked lamellas of 1D vanadium pentoxide nanofibres, intercalated with water molecules, are complemented by 2D graphene oxide (GO) nanosheets. The components self-assemble at low temperature into hierarchically arranged, highly flexible ceramic-based papers. The papers’ mechanical properties are found to be strongly influenced by the amount of the integrated GO phase. Nanoindentation tests reveal an out-of-plane decrease in Young’s modulus with increasing GO content. Furthermore, nanotensile tests reveal that the ceramic-based papers with 0.5 wt% GO show superior in-plane mechanical performance, compared to papers with higher GO contents as well as to pristine V2O5 and GO papers. Remarkably, the performance is preserved even after stretching the composite material for 100 nanotensile test cycles. The good mechanical stability and unique combination of stiffness and flexibility enable this material to memorize its micro- and macroscopic shape after repeated mechanical deformations. These findings provide useful guidelines for the development of bioinspired, multifunctional systems whose hierarchical structure imparts tailored mechanical properties and cycling stability, which is essential for applications such as actuators or flexible electrodes for advanced energy storage. PMID:28102338

  14. Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films

    KAUST Repository

    Sun, Ke; Saadi, Fadl H.; Lichterman, Michael F.; Hale, William G.; Wang, Hsinping; Zhou, Xinghao; Plymale, Noah T.; Omelchenko, Stefan T.; He, Jr-Hau; Papadantonakis, Kimberly M.; Brunschwig, Bruce S.; Lewis, Nathan S.

    2015-01-01

    Reactively sputtered nickel oxide (NiOx) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O2(g). These NiOx coatings provide

  15. Strain-induced phenomenon in complex oxide thin films

    Science.gov (United States)

    Haislmaier, Ryan

    Complex oxide materials wield an immense spectrum of functional properties such as ferroelectricity, ferromagnetism, magnetoelectricity, optoelectricity, optomechanical, magnetoresistance, superconductivity, etc. The rich coupling between charge, spin, strain, and orbital degrees of freedom makes this material class extremely desirable and relevant for next generation electronic devices and technologies which are trending towards nanoscale dimensions. Development of complex oxide thin film materials is essential for realizing their integration into nanoscale electronic devices, where theoretically predicted multifunctional capabilities of oxides could add tremendous value. Employing thin film growth strategies such as epitaxial strain and heterostructure interface engineering can greatly enhance and even unlock novel material properties in complex oxides, which will be the main focus of this work. However, physically incorporating oxide materials into devices remains a challenge. While advancements in molecular beam epitaxy (MBE) of thin film oxide materials has led to the ability to grow oxide materials with atomic layer precision, there are still major limitations such as controlling stoichiometric compositions during growth as well as creating abrupt interfaces in multi-component layered oxide structures. The work done in this thesis addresses ways to overcome these limitations in order to harness intrinsic material phenomena. The development of adsorption-controlled stoichiometric growth windows of CaTiO3 and SrTiO3 thin film materials grown by hybrid MBE where Ti is supplied using metal-organic titanium tetraisopropoxide material is thoroughly outlined. These growth windows enable superior epitaxial strain-induced ferroelectric and dielectric properties to be accessed as demonstrated by chemical, structural, electrical, and optical characterization techniques. For tensile strained CaTiO3 and compressive strained SrTiO 3 films, the critical effects of

  16. Polycrystalline Mn-alloyed indium tin oxide films

    International Nuclear Information System (INIS)

    Scarlat, Camelia; Schmidt, Heidemarie; Xu, Qingyu; Vinnichenko, Mykola; Kolitsch, Andreas; Helm, Manfred; Iacomi, Felicia

    2008-01-01

    Magnetic ITO films are interesting for integrating ITO into magneto-optoelectronic devices. We investigated n-conducting indium tin oxide (ITO) films with different Mn doping concentration which have been grown by chemical vapour deposition using targets with the atomic ratio In:Sn:Mn=122:12:0,114:12:7, and 109:12:13. The average film roughness ranges between 30 and 50 nm and XRD patterns revealed a polycrystalline structure. Magnetotransport measurements revealed negative magnetoresistance for all the samples, but high field positive MR can be clearly observed at 5 K with increasing Mn doping concentration. Spectroscopic ellipsometry (SE) has been used to prove the existence of midgap states in the Mn-alloyed ITO films revealing a transmittance less than 80%. A reasonable model for the ca. 250 nm thick Mn-alloyed ITO films has been developed to extract optical constants from SE data below 3 eV. Depending on the Mn content, a Lorentz oscillator placed between 1 and 2 eV was used to model optical absorption below the band gap

  17. Electrochromic Properties of Tungsten Oxide Films Prepared by Reactive Sputtering

    Science.gov (United States)

    Kim, Min Hong; Kang, Tai Young; Jung, Yu Sup; Kim, Kyung Hwan

    2013-05-01

    WO3-x thin films were deposited on induim tin oxide (ITO) glass substrates with various oxygen flow ratios from 0.55 to 0.7 by the reactive facing-target sputtering method, at a power density of 4 W/cm2 and room temperature. The structural properties of the WO3-x thin films were measured by X-ray diffractometry and Raman spectral analysis. As-deposited WO3-x thin films had an amorphous structure. In the Raman spectra, WO3-x thin films exhibited two strong peaks at 770 and 950 cm-1 attributed to the vibrations of W6+-O and W6+=O bonds, respectively. The electrochemical and optical properties of WO3-x thin films were measured by cyclic voltammetry and UV/vis spectrometry. The results showed the highest charge density at an oxygen flow ratio of 0.7 and the highest transmittance in the visible range. The maximum coloration efficiency was 30.82 cm2/C at an oxygen flow ratio of 0.7.

  18. Porous Zinc Oxide Thin Films: Synthesis Approaches and Applications

    Directory of Open Access Journals (Sweden)

    Marco Laurenti

    2018-02-01

    Full Text Available Zinc oxide (ZnO thin films have been widely investigated due to their multifunctional properties, i.e., catalytic, semiconducting and optical. They have found practical use in a wide number of application fields. However, the presence of a compact micro/nanostructure has often limited the resulting material properties. Moreover, with the advent of low-dimensional ZnO nanostructures featuring unique physical and chemical properties, the interest in studying ZnO thin films diminished more and more. Therefore, the possibility to combine at the same time the advantages of thin-film based synthesis technologies together with a high surface area and a porous structure might represent a powerful solution to prepare ZnO thin films with unprecedented physical and chemical characteristics that may find use in novel application fields. Within this scope, this review offers an overview on the most successful synthesis methods that are able to produce ZnO thin films with both framework and textural porosities. Moreover, we discuss the related applications, mainly focused on photocatalytic degradation of dyes, gas sensor fabrication and photoanodes for dye-sensitized solar cells.

  19. Surface and sub-surface thermal oxidation of thin ruthenium films

    NARCIS (Netherlands)

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Kokke, S.; Zoethout, E.; Yakshin, Andrey; Bijkerk, Frederik

    2014-01-01

    A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low

  20. Thermal oxidation of Ni films for p-type thin-film transistors

    KAUST Repository

    Jiang, Jie; Wang, Xinghui; Zhang, Qing; Li, Jingqi; Zhang, Xixiang

    2013-01-01

    p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on-off ratio are found to be 5.2 cm2 V-1 s-1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with "top contact" and "bottom contact" channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. © 2013 the Owner Societies.

  1. Vanadium in South Africa

    International Nuclear Information System (INIS)

    Rohrman, B.

    1985-01-01

    This paper deals briefly with the history of vanadium and its uses, price movement, and world resources. It then describes the titanomagnetite ore of the Bushveld Complex, and the production of vanadium from this ore at Highveld Steel and Vanadium Corporation Limited, giving details of the various processes used, including the roast-leach, rotary-kiln, electric-smelting, shaking-ladle, and basic-oxygen-furnace operations. The paper concludes with a very brief account of the treatment of Highveld slags in Europe for the production of vanadium pentoxide and ferrovanadium

  2. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    Science.gov (United States)

    Horak, P.; Bejsovec, V.; Vacik, J.; Lavrentiev, V.; Vrnata, M.; Kormunda, M.; Danis, S.

    2016-12-01

    Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C-600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C-600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu2O phase was identified. However, the oxidation at 200 °C led to a more complicated composition - in the depth Cu2O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH)2. A limited amount of Cu2O was also found in samples annealed at 600 °C. The sheet resistance RS of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing RS was measured in the range 2.64 MΩ/□-2.45 GΩ/□. The highest RS values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the 16O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed an increased response to hydrogen at 300 °C, while Au-covered films were more sensitive to methanol vapours at 350 °C.

  3. Photocatalysis of zinc oxide nanotip array/titanium oxide film heterojunction prepared by aqueous solution deposition

    Science.gov (United States)

    Lee, Ming-Kwei; Lee, Bo-Wei; Kao, Chen-Yu

    2017-05-01

    A TiO2 film was prepared on indium tin oxide (ITO)/glass by aqueous solution deposition (ASD) with precursors of ammonium hexafluoro-titanate and boric acid at 40 °C. The photocatalysis of annealed TiO2 film increases with increasing growth time and decreases with increasing growth times longer than 60 min. A ZnO nanotip array was prepared on ZnO seed layer/TiO2 film/glass by aqueous solution deposition with precursors of zinc nitrate and ammonium hydroxide at 70 °C. The photocatalysis of ASD-ZnO/ASD-TiO2 film/ITO glass can be better than that of P25.

  4. Preparation of porous titanium oxide films onto indium tin oxide for application in organic photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    Macedo, Andreia G. [Laboratorio de Dispositivos Nanoestruturados, Departamento de Fisica, Universidade Federal do Parana, Curitiba, Parana (Brazil); Mattos, Luana L.; Spada, Edna R.; Serpa, Rafael B.; Campos, Cristiani S. [Laboratorio de Sistemas Nanoestruturados, Departamento de Fisica, Universidade Federal de Santa Catarina, Florianopolis, Santa Catarina (Brazil); Grova, Isabel R.; Ackcelrud, Leni [Laboratorio de Polimeros Paulo Scarpa, Departamento de Quimica, Universidade Federal do Parana, Curitiba, Parana (Brazil); Reis, Francoise T.; Sartorelli, Maria L. [Laboratorio de Sistemas Nanoestruturados, Departamento de Fisica, Universidade Federal de Santa Catarina, Florianopolis, Santa Catarina (Brazil); Roman, Lucimara S., E-mail: lsroman@fisica.ufpr.br [Laboratorio de Dispositivos Nanoestruturados, Departamento de Fisica, Universidade Federal do Parana, Curitiba, Parana (Brazil)

    2012-05-01

    In this work, porous ordered TiO{sub 2} films were prepared through sol gel route by using a monolayer of polystyrene spheres as template on indium-tin oxide/glass substrate. These films were characterized by SEM, AFM, Raman spectroscopy, UV-vis absorbance and XRD. The UV-vis absorbance spectrum show a pseudo band gap (PBG) with maxima at 460 nm arising from the light scattering and partial or total suppression of the photon density of states, this PBG can be controlled by the size of the pore. We also propose the use of this porous film as electron acceptor electrode in organic photovoltaic cells; we show that devices prepared with porous titania displayed higher efficiencies than devices using compact titania films as electrode. Such behaviour was observed in both bilayer and bulk heterojunction devices.

  5. Preparation of porous titanium oxide films onto indium tin oxide for application in organic photovoltaic devices

    International Nuclear Information System (INIS)

    Macedo, Andreia G.; Mattos, Luana L.; Spada, Edna R.; Serpa, Rafael B.; Campos, Cristiani S.; Grova, Isabel R.; Ackcelrud, Leni; Reis, Françoise T.; Sartorelli, Maria L.; Roman, Lucimara S.

    2012-01-01

    In this work, porous ordered TiO 2 films were prepared through sol gel route by using a monolayer of polystyrene spheres as template on indium-tin oxide/glass substrate. These films were characterized by SEM, AFM, Raman spectroscopy, UV-vis absorbance and XRD. The UV-vis absorbance spectrum show a pseudo band gap (PBG) with maxima at 460 nm arising from the light scattering and partial or total suppression of the photon density of states, this PBG can be controlled by the size of the pore. We also propose the use of this porous film as electron acceptor electrode in organic photovoltaic cells; we show that devices prepared with porous titania displayed higher efficiencies than devices using compact titania films as electrode. Such behaviour was observed in both bilayer and bulk heterojunction devices.

  6. Vanadium pentoxide nanoparticles mimic vanadium haloperoxidases and thwart biofilm formation

    Science.gov (United States)

    Natalio, Filipe; André, Rute; Hartog, Aloysius F.; Stoll, Brigitte; Jochum, Klaus Peter; Wever, Ron; Tremel, Wolfgang

    2012-08-01

    Marine biofouling--the colonization of small marine microorganisms on surfaces that are directly exposed to seawater, such as ships' hulls--is an expensive problem that is currently without an environmentally compatible solution. Biofouling leads to increased hydrodynamic drag, which, in turn, causes increased fuel consumption and greenhouse gas emissions. Tributyltin-free antifouling coatings and paints based on metal complexes or biocides have been shown to efficiently prevent marine biofouling. However, these materials can damage the environment through metal leaching (for example, of copper and zinc) and bacteria resistance. Here, we show that vanadium pentoxide nanowires act like naturally occurring vanadium haloperoxidases to prevent marine biofouling. In the presence of bromide ions and hydrogen peroxide, the nanowires catalyse the oxidation of bromide ions to hypobromous acid (HOBr). Singlet molecular oxygen (1O2) is formed and this exerts strong antibacterial activity, which prevents marine biofouling without being toxic to marine biota. Vanadium pentoxide nanowires have the potential to be an alternative approach to conventional anti-biofouling agents.

  7. Vacancy distribution in nonstoichiometric vanadium monoxide

    International Nuclear Information System (INIS)

    Gusev, A.I.; Davydov, D.A.; Valeeva, A.A.

    2011-01-01

    Graphical abstract: Display Omitted Research highlights: → A certain fraction of vanadium atoms in disordered cubic vanadium monoxide VO y and ordered tetragonal phase V 52 O 64 is located in tetrahedral positions of a basic cubic lattice. → These positions are never occupied by any atoms in other strongly nonstoichiometric carbides, nitrides and oxides. → Both disordered and ordered structures of vanadium monoxide are characterized by the presence of short-range order of displacements in the oxygen sublattice and short-range order of substitution in the metal sublattice. → The short-range order of displacement is caused by the local displacements of O atoms from V (t) atoms occupying tetrahedral positions. The short-range order of substitution appears because V (t) atoms in the tetrahedral positions are always in the environment of four vacancies □ of the vanadium sublattice. - Abstract: Structural vacancy distribution in the crystal lattice of the tetragonal V 52 O 64 superstructure which is formed on the basis of disordered superstoichiometric cubic vanadium monoxide VO y ≡V x O z is experimentally determined and the presence of significant local atomic displacements and large local microstrains in a crystal lattice of real ordered phase is established. It is shown that the relaxation of local microstrains takes place owing to the basic disordered cubic phase grain refinement and a formation of ordered phase domains. The ordered phase domains grow in the direction from the boundaries to the centre of grains of the disordered basic cubic phase. Isothermal evolution at 970 K of the average domain size in ordered VO 1.29 vanadium monoxide is established. It is shown that the short-range order presents in a metal sublattice of disordered cubic VO y vanadium monoxide. The character of the short-range order is such that vanadium atoms occupying tetrahedral positions are in the environment of four vacant sites of the vanadium sublattice. This means that the

  8. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.; Sarath Kumar, S. R.; Alshareef, Husam N.

    2013-01-01

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature

  9. Intrinsic charge trapping in amorphous oxide films: status and challenges

    Science.gov (United States)

    Strand, Jack; Kaviani, Moloud; Gao, David; El-Sayed, Al-Moatasem; Afanas’ev, Valeri V.; Shluger, Alexander L.

    2018-06-01

    We review the current understanding of intrinsic electron and hole trapping in insulating amorphous oxide films on semiconductor and metal substrates. The experimental and theoretical evidences are provided for the existence of intrinsic deep electron and hole trap states stemming from the disorder of amorphous metal oxide networks. We start from presenting the results for amorphous (a) HfO2, chosen due to the availability of highest purity amorphous films, which is vital for studying their intrinsic electronic properties. Exhaustive photo-depopulation spectroscopy measurements and theoretical calculations using density functional theory shed light on the atomic nature of electronic gap states responsible for deep electron trapping observed in a-HfO2. We review theoretical methods used for creating models of amorphous structures and electronic structure calculations of amorphous oxides and outline some of the challenges in modeling defects in amorphous materials. We then discuss theoretical models of electron polarons and bi-polarons in a-HfO2 and demonstrate that these intrinsic states originate from low-coordinated ions and elongated metal-oxygen bonds in the amorphous oxide network. Similarly, holes can be captured at under-coordinated O sites. We then discuss electron and hole trapping in other amorphous oxides, such as a-SiO2, a-Al2O3, a-TiO2. We propose that the presence of low-coordinated ions in amorphous oxides with electron states of significant p and d character near the conduction band minimum can lead to electron trapping and that deep hole trapping should be common to all amorphous oxides. Finally, we demonstrate that bi-electron trapping in a-HfO2 and a-SiO2 weakens Hf(Si)–O bonds and significantly reduces barriers for forming Frenkel defects, neutral O vacancies and O2‑ ions in these materials. These results should be useful for better understanding of electronic properties and structural evolution of thin amorphous films under carrier injection

  10. Highly conductive grain boundaries in copper oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deuermeier, Jonas, E-mail: j.deuermeier@campus.fct.unl.pt [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Wardenga, Hans F.; Morasch, Jan; Siol, Sebastian; Klein, Andreas, E-mail: aklein@surface.tu-darmstadt.de [Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Nandy, Suman; Calmeiro, Tomás; Martins, Rodrigo; Fortunato, Elvira [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal)

    2016-06-21

    High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu{sub 2}O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu{sub 2}O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu{sub 2}O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

  11. Formation and dissolution of the anodic oxide film on zirconium in alcoholic aqueous solutions

    International Nuclear Information System (INIS)

    Mogoda, A.S.

    1995-01-01

    The dissolution behavior of the anodic oxide film formed in alcoholic aqueous solutions was studied. Results indicated the dissolution mechanism of the duplex oxide film followed a zero-order rate equation. The increase in methanol concentration in the formation medium (phosphoric acid [H 3 PO 4 ]) resulted in formation of an oxide film that incorporated little phosphate ion and that dissolved at a low rate. The dissolution rate of the oxide film decreased with increasing methanol concentration in the dissolution medium. This was attributed to the increase in the viscosity of the medium, which led to a decrease in the diffusion coefficient of the dissolution product of the zirconium oxide film. Dissolution of the anodic oxide film also was investigated as a function of the chain length of alcohols

  12. Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2012-01-01

    Full Text Available We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO thin film transistors (TFTs. Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE, carrier concentration, and subthreshold swing (S of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

  13. Nitridation of vanadium by ion beam irradiation

    International Nuclear Information System (INIS)

    Kiuchi, Masato; Chayahara, Akiyoshi; Kinomura, Atsushi; Ensinger, Wolfgang

    1994-01-01

    The nitridation of vanadium by ion beam irradiation is studied by the ion implantation method and the dynamic mixing method. The nitrogen ion implantation was carried out into deposited V(110) films. Using both methods, three phases are formed, i.e. α-V, β-V 2 N, and δ-VN. Which phases are formed is related to the implantation dose or the arrival ratio. The orientation of the VN films produced by the dynamic ion beam mixing method is (100) and that of the VN films produced by the ion implantation method is (111). The nitridation of vanadium is also discussed in comparison with that of titanium and chromium. ((orig.))

  14. Effects of iron content on electrical resistivity of oxide films on Zr-base alloys

    International Nuclear Information System (INIS)

    Kubo, Toshio; Uno, Masayoshi

    1991-01-01

    Measurements of electrical resistivity were made for oxide films formed by anodic oxidation and steam oxidation (400degC/12 h) on Zr plates with different Fe contents. When the Fe content was higher than about 1,000 ppm the electrical resistivity of the steam oxide films was almost equivalent to that of the anodic oxide films, while at lower Fe content the former exhibited lower electrical resistivity than the latter by about 1∼3 orders of magnitude. The anodic oxide film was an almost homogeneous single oxide layer. The steam oxide films, on the other hand, were composed of duplex oxide layers. The oxide layer formed in the vicinity of the oxide/metal interface had higher electrical resistivity than the near-surface oxide layer by about 1∼4 orders of magnitude. The oxide layer in the vicinity of the interface could act as a protective film against corrosion and its electrical resistivity is one important factor controlling the layer protectiveness. The electrical resistivity of the oxide/metal interfacial layer was strongly dependent on the Fe content. One possible reason for Fe to improve the corrosion resistance is that Fe ions would tend to stabilize the tetragonal (or cubic) phase and consequently suppress the formation of open pores and cracks in the interfacial layer. (author)

  15. Electrical behavior of amide functionalized graphene oxide and graphene oxide films annealed at different temperatures

    International Nuclear Information System (INIS)

    Rani, Sumita; Kumar, Mukesh; Kumar, Dinesh; Sharma, Sumit

    2015-01-01

    Films of graphene oxide (GO) and amide functionalized graphene oxides (AGOs) were deposited on SiO 2 /Si(100) by spin coating and were thermally annealed at different temperatures. Sheet resistance of GO and AGOs films was measured using four probe resistivity method. GO an insulator at room temperature, exhibits decrease in sheet resistance with increase in annealing temperature. However, AGOs' low sheet resistance (250.43 Ω) at room temperature further decreases to 39.26 Ω after annealing at 800 °C. It was observed that the sheet resistance of GO was more than AGOs up to 700 °C, but effect was reversed after annealing at higher temperature. At higher annealing temperatures the oxygen functionality reduces in GO and sheet resistance decreases. Sheet resistance was found to be annealing time dependent. Longer duration of annealing at a particular temperature results in decrease of sheet resistance. - Highlights: • Amide functionalized graphene oxides (AGOs) were synthesized at room temperature (RT). • AGO films have low sheet resistance at RT as compared to graphene oxide (GO). • Fast decrease in the sheet resistance of GO with annealing as compared to AGOs • AGOs were found to be highly dispersible in polar solvents

  16. Effect of hydrogen on stresses in anodic oxide film on titanium

    International Nuclear Information System (INIS)

    Kim, Joong-Do; Pyun, Su-Il; Seo, Masahiro

    2003-01-01

    Stresses in anodic oxide film on titanium thin film/glass electrode in pH 8.4 borate solution were investigated by a bending beam method. The increases in compressive stress observed with cathodic potential sweeps after formation of anodic oxide film were attributed to the volume expansion due to the compositional change of anodic oxide film from TiO 2 to TiO 2-x (OH) x . The instantaneous responses of changes in stress, Δσ, in the anodic oxide film to potential steps demonstrated the reversible characteristic of the TiO 2-x (OH) x formation reaction. In contrast, the transient feature of Δσ for the titanium without anodic oxide film represented the irreversible formation of TiH x at the metal/oxide interphase. The large difference in stress between with and without the oxide film, has suggested that most of stresses generated during the hydrogen absorption/desorption reside in the anodic oxide film. A linear relationship between changes in stress, Δ(Δσ) des , and electric charge, ΔQ des , during hydrogen desorption was found from the current and stress transients, manifesting that the stress changes were crucially determined by the amount of hydrogen desorbed from the oxide film. The increasing tendency of -Δ(Δσ) des with increasing number of potential steps and film formation potential were discussed in connection with the increase in desorption amount of hydrogen in the oxide film with increasing absorption/desorption cycles and oxide film thickness

  17. Structure and function of vanadium haloperoxidases

    NARCIS (Netherlands)

    Wever, R.; Michibata, H.

    2012-01-01

    Vanadium haloperoxidases contain the bare metal oxide vanadate as a prosthetic group and differ strongly from the heme peroxidases in substrate specificity and molecular properties. The substrates of these enzymes are limited to halides and sulfides, which in the presence of hydrogen peroxide are

  18. Electrical and optical performance of transparent conducting oxide films deposited by electrostatic spray assisted vapour deposition.

    Science.gov (United States)

    Hou, Xianghui; Choy, Kwang-Leong; Liu, Jun-Peng

    2011-09-01

    Transparent conducting oxide (TCO) films have the remarkable combination of high electrical conductivity and optical transparency. There is always a strong motivation to produce TCO films with good performance at low cost. Electrostatic Spray Assisted Vapor Deposition (ESAVD), as a variant of chemical vapour deposition (CVD), is a non-vacuum and low-cost deposition method. Several types of TCO films have been deposited using ESAVD process, including indium tin oxide (ITO), antimony-doped tin oxide (ATO), and fluorine doped tin oxide (FTO). This paper reports the electrical and optical properties of TCO films produced by ESAVD methods, as well as the effects of post treatment by plasma hydrogenation on these TCO films. The possible mechanisms involved during plasma hydrogenation of TCO films are also discussed. Reduction and etching effect during plasma hydrogenation are the most important factors which determine the optical and electrical performance of TCO films.

  19. Nanoscale reduction of graphene oxide thin films and its characterization.

    Science.gov (United States)

    Lorenzoni, M; Giugni, A; Di Fabrizio, E; Pérez-Murano, Francesc; Mescola, A; Torre, B

    2015-07-17

    In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip-current measurements show that an edged drop in electrical resistance characterizes the reduced areas, and that the reduction process is, to a good approximation, proportional to the applied bias between the onset voltage and the saturation thresholds. An atomic force microscope (AFM) quantifies the drop of the surface height for the reduced profile due to the loss of oxygen. Complementarily, lateral force microscopy reveals a homogeneous friction coefficient of the reduced regions that is remarkably lower than that of native graphene oxide, confirming a chemical change in the patterned region. Micro Raman spectroscopy, which provides access to insights into the chemical process, allows one to quantify the restoration and de-oxidation of the graphitic network driven by the electrochemical reduction and to determine characteristic length scales. It also confirms the homogeneity of the process over wide areas. The results shown were obtained from accurate analysis of the shift, intensity and width of Raman peaks for the main vibrational bands of GO and reduced graphene oxide (rGO) mapped over large areas. Concerning multilayered GO thin films obtained by drop-casting we have demonstrated an unprecedented lateral resolution in ambient conditions as well as an improved control, characterization and understanding of the reduction process occurring in GO randomly folded multilayers, useful for large-scale processing of graphene-based material.

  20. Nanoscale reduction of graphene oxide thin films and its characterization

    KAUST Repository

    Lorenzoni, M.

    2015-06-29

    In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip-current measurements show that an edged drop in electrical resistance characterizes the reduced areas, and that the reduction process is, to a good approximation, proportional to the applied bias between the onset voltage and the saturation thresholds. An atomic force microscope (AFM) quantifies the drop of the surface height for the reduced profile due to the loss of oxygen. Complementarily, lateral force microscopy reveals a homogeneous friction coefficient of the reduced regions that is remarkably lower than that of native graphene oxide, confirming a chemical change in the patterned region. Micro Raman spectroscopy, which provides access to insights into the chemical process, allows one to quantify the restoration and de-oxidation of the graphitic network driven by the electrochemical reduction and to determine characteristic length scales. It also confirms the homogeneity of the process over wide areas. The results shown were obtained from accurate analysis of the shift, intensity and width of Raman peaks for the main vibrational bands of GO and reduced graphene oxide (rGO) mapped over large areas. Concerning multilayered GO thin films obtained by drop-casting we have demonstrated an unprecedented lateral resolution in ambient conditions as well as an improved control, characterization and understanding of the reduction process occurring in GO randomly folded multilayers, useful for large-scale processing of graphene-based material. © 2015 IOP Publishing Ltd.

  1. Friction behaviour of anodic oxide film on aluminum impregnated with molybdenum sulfide compounds

    Energy Technology Data Exchange (ETDEWEB)

    Maejima, M.; Saruwatari, K. [Fujikura Ltd., Tokyo (Japan); Takaya, M. [Faculty of Engineering, Chiba Institute of Technology 17-1, Tsudanuma 2-Chome, 275-0016, Narasino-shi Chiba (Japan)

    2000-10-23

    In order to improve the lubricity and wear resistance of aluminum anodic oxide films, it is necessary to ensure the film layers are dense to prevent cracking, and to harden the films as well as reduce the shear stress of the film surfaces. From this view point, lubricious, hard anodic oxide films have been studied in the past, but fully satisfactory results have yet to be realized. In this paper, we report on our study of the re-anodizing of anodic oxide film in an aqueous solution of (NH)MoS. Molybdenum sulfide and compounds filled the 20-nm diameter pores of the film, creating internal stress which compressed the film, suppressing the occurrence of cracks and reducing the friction coefficient. (orig.)

  2. Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

    KAUST Repository

    Hanna, Amir; Hussain, Aftab M.; Omran, Hesham; Alshareef, Sarah; Salama, Khaled N.; Hussain, Muhammad Mustafa

    2015-01-01

    High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (Zn

  3. Intrinsic stress of bismuth oxide thin films: effect of vapour chopping and air ageing

    International Nuclear Information System (INIS)

    Patil, R B; Puri, R K; Puri, V

    2008-01-01

    Bismuth oxide thin films of thickness 1000 A 0 have been prepared by thermal oxidation (in air) of vacuum evaporated bismuth thin films (on glass substrate) at different oxidation temperatures and duration. Both the vapour chopped and nonchopped bismuth oxide thin films showed polycrystalline and polymorphic structure. The monoclinic bismuth oxide was found to be predominant in both the cases. The effect of vapour chopping and air exposure for 40 days on the intrinsic stress of bismuth oxide thin films has been studied. The vapour chopped films showed low (3.92 - 4.80 x 10 9 N/m 2 ) intrinsic stress than those of nonchopped bismuth oxide thin films (5.77 - 6.74 x 10 9 N/m 2 ). Intrinsic stress was found to increase due to air ageing. The effect of air ageing on the vapour chopped films was found low. The vapour chopped films showed higher packing density. Higher the packing density, lower the film will age. The process of chopping vapour flow creates films with less inhomogenety i.e. a low concentration of flaws and non-planar defects which results in lower intrinsic stress

  4. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    International Nuclear Information System (INIS)

    Tripathy, Sumanta K.; Rajeswari, V. P.

    2014-01-01

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn 3 O 4 , corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells

  5. Synthesis of electro-active manganese oxide thin films by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Merritt, Anna R. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States); Rajagopalan, Ramakrishnan [Department of Engineering, The Pennsylvania State University, Dubois, PA 15801 (United States); Materials Research Institute, The Pennsylvania State University, University Park, PA 16802 (United States); Carter, Joshua D. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States)

    2014-04-01

    The good stability, cyclability and high specific capacitance of manganese oxide (MnO{sub x}) has recently promoted a growing interest in utilizing MnO{sub x} in asymmetric supercapacitor electrodes. Several literature reports have indicated that thin film geometries of MnO{sub x} provide specific capacitances that are much higher than bulk MnO{sub x} powders. Plasma enhanced chemical vapor deposition (PECVD) is a versatile technique for the production of metal oxide thin films with high purity and controllable thickness. In this work, MnO{sub x} thin films deposited by PECVD from a methylcyclopentadienyl manganese tricarbonyl precursor are presented and the effect of processing conditions on the quality of MnO{sub x} films is described. The film purity and oxidation state of the MnO{sub x} films were studied by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Preliminary electrochemical testing of MnO{sub x} films deposited on carbon fiber electrodes in aqueous electrolytes indicates that the PECVD synthesized films are electrochemically active. - Highlights: • Plasma enhanced chemical vapor deposition of manganese oxide thin films. • Higher plasma power and chamber pressure increase deposition rate. • Manganese oxide thin films are electrochemically active. • Best electrochemical performance observed for pure film with low stress • Lower capacitance observed at higher scan rates despite thin film geometry.

  6. Surfactant-assisted ultrasonic spray pyrolysis of nickel oxide and lithium-doped nickel oxide thin films, toward electrochromic applications

    Energy Technology Data Exchange (ETDEWEB)

    Denayer, Jessica [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Bister, Geoffroy [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Simonis, Priscilla [Laboratory LPS, University of Namur, rue de bruxelles 61, 5000 Namur (Belgium); Colson, Pierre; Maho, Anthony [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Aubry, Philippe [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Vertruyen, Bénédicte [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Henrist, Catherine, E-mail: catherine.henrist@ulg.ac.be [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Lardot, Véronique; Cambier, Francis [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Cloots, Rudi [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium)

    2014-12-01

    Highlights: • Surfactant-assisted USP: a novel and low cost process to obtain high quality nickel oxide films, with or without lithium dopant. • Increased uniformity and reduced light scattering thanks to the addition of a surfactant. • Improved electrochromic performance (coloration efficiency and contrast) for lithium-doped films by comparison with the undoped NiO film. - Abstract: Lithium-doped nickel oxide and undoped nickel oxide thin films have been deposited on FTO/glass substrates by a surfactant-assisted ultrasonic spray pyrolysis. The addition of polyethylene glycol in the sprayed solution has led to improved uniformity and reduced light scattering compared to films made without surfactant. Furthermore, the presence of lithium ions in NiO films has resulted in improved electrochromic performances (coloration contrast and efficiency), but with a slight decrease of the electrochromic switching kinetics.

  7. Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

    Science.gov (United States)

    Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

    2010-07-13

    Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

  8. Fabrication of nickel oxide and Ni-doped indium tin oxide thin films using pyrosol process

    International Nuclear Information System (INIS)

    Nakasa, Akihiko; Adachi, Mami; Usami, Hisanao; Suzuki, Eiji; Taniguchi, Yoshio

    2006-01-01

    Organic light emitting diodes (OLEDs) need indium tin oxide (ITO) anodes with highly smooth surface. The work function of ITO, about 4.8 eV, is generally rather lower than the optimum level for application to OLEDs. In this work, NiO was deposited by pyrosol process on pyrosol ITO film to increase the work function of the ITO for improving the performance of OLEDs. It was confirmed that NiO was successfully deposited on pyrosol ITO film and the NiO deposition increased the work function of pyrosol ITO, using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and atmospheric photoelectron spectroscopy. Furthermore, doping ITO with Ni succeeded in producing the Ni-doped ITO film with high work function and lower sheet resistance

  9. Spray Pyrolyzed Polycrystalline Tin Oxide Thin Film as Hydrogen Sensor

    Directory of Open Access Journals (Sweden)

    Ganesh E. Patil

    2010-09-01

    Full Text Available Polycrystalline tin oxide (SnO2 thin film was prepared by using simple and inexpensive spray pyrolysis technique (SPT. The film was characterized for their phase and morphology by X-ray diffraction (XRD and scanning electron microscopy (SEM, respectively. The crystallite size calculated from the XRD pattern is 84 nm. Conductance responses of the polycrystalline SnO2 were measured towards gases like hydrogen (H2, liquefied petroleum gas (LPG, ethanol vapors (C2H5OH, NH3, CO, CO2, Cl2 and O2. The gas sensing characteristics were obtained by measuring the sensor response as a function of various controlling factors like operating temperature, operating voltages (1 V, 5 V, 10 V 15 V, 20 V and 25 V and concentration of gases. The sensor response measurement showed that the SnO2 has maximum response to hydrogen. Furthermore; the SnO2 based sensor exhibited fast response and good recovery towards hydrogen at temperature 150 oC. The result of response towards H2 reveals that SnO2 thin film prepared by SPT would be a suitable material for the fabrication of the hydrogen sensor.

  10. Electrochromic Devices Based on Porous Tungsten Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Y. Djaoued

    2012-01-01

    Full Text Available Recent developments in the synthesis of transition metal oxides in the form of porous thin films have opened up opportunities in the construction of electrochromic devices with enhanced properties. In this paper, synthesis, characterization and electrochromic applications of porous WO3 thin films with different nanocrystalline phases, such as hexagonal, monoclinic, and orthorhombic, are presented. Asymmetric electrochromic devices have been constructed based on these porous WO3 thin films. XRD measurements of the intercalation/deintercalation of Li+ into/from the WO3 layer of the device as a function of applied coloration/bleaching voltages show systematic changes in the lattice parameters associated with structural phase transitions in LixWO3. Micro-Raman studies show systematic crystalline phase changes in the spectra of WO3 layers during Li+ ion intercalation and deintercalation, which agree with the XRD data. These devices exhibit interesting optical modulation (up to ~70% due to intercalation/deintercalation of Li ions into/from the WO3 layer of the devices as a function of applied coloration/bleaching voltages. The obtained optical modulation of the electrochromic devices indicates that, they are suitable for applications in electrochromic smart windows.

  11. Interfacial Shear Strength of Multilayer Graphene Oxide Films.

    Science.gov (United States)

    Daly, Matthew; Cao, Changhong; Sun, Hao; Sun, Yu; Filleter, Tobin; Singh, Chandra Veer

    2016-02-23

    Graphene oxide (GO) is considered as one of the most promising layered materials with tunable physical properties and applicability in many important engineering applications. In this work, the interfacial behavior of multilayer GO films was directly investigated via GO-to-GO friction force microscopy, and the interfacial shear strength (ISS) was measured to be 5.3 ± 3.2 MPa. Based on high resolution atomic force microscopy images and the available chemical data, targeted molecular dynamics simulations were performed to evaluate the influence of functional structure, topological defects, and interlayer registry on the shear response of the GO films. Theoretical values for shear strength ranging from 17 to 132 MPa were predicted for the different structures studied, providing upper bounds for the ISS. Computational results also revealed the atomic origins of the stochastic nature of friction measurements. Specifically, the wide scatter in experimental measurements was attributed to variations in functional structure and topological defects within the sliding volume. The findings of this study provide important insight for understanding the significant differences in strength between monolayer and bulk graphene oxide materials and can be useful for engineering topological structures with tunable mechanical properties.

  12. Electrical and optical properties of amorphous indium zinc oxide films

    International Nuclear Information System (INIS)

    Ito, N.; Sato, Y.; Song, P.K.; Kaijio, A.; Inoue, K.; Shigesato, Y.

    2006-01-01

    Valence electron control and electron transport mechanisms on the amorphous indium zinc oxide (IZO) films were investigated. The amorphous IZO films were deposited by dc magnetron sputtering using an oxide ceramic IZO target (89.3 wt.% In 2 O 3 and 10.7 wt.% ZnO). N-type impurity dopings, such as Sn, Al or F, could not lead to the increase in carrier density in the IZO. Whereas, H 2 introduction into the IZO deposition process was confirmed to be effective to increase carrier density. By 30% H 2 introduction into the deposition process, carrier density increased from 3.08 x 10 2 to 7.65 x 10 2 cm -3 , which must be originated in generations of oxygen vacancies or interstitial Zn 2+ ions. Decrease in the transmittance in the near infrared region and increase in the optical band gap were observed with the H 2 introduction, which corresponded to the increase in carrier density. The lowest resistivity of 3.39 x 10 -4 Ω cm was obtained by 10% H 2 introduction without substrate heating during the deposition

  13. Characterization for rbs of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide

    International Nuclear Information System (INIS)

    Pedrero, E.; Vigil, E.; Zumeta, I.

    1999-01-01

    The depth of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide was characterized using Rutherford Backscattering Spectrometry. Film depths are compared in function of bath and suspension parameters

  14. The structural studies of vanadium substituted lithium-bismuth-boro-tellurite glass

    Science.gov (United States)

    Madhu, A.; Eraiah, B.

    2018-05-01

    The structural studies of vanadium substituted lithium-bismuth-boro-tellurite glass is successfully prepared and certain analysis like XRD,FTIR,DTA/TGA with density, molar volume are done. The amorphous phase has been identified based on X-ray diffraction analysis. The vanadium oxide plays the role as a glass-modifier and influences on BO3 ↔ BO4 conversion. The observed nonlinear variation in Tg with vanadium oxide increase, it reflects structural changes. The nonlinear variation of density and molar volume can be attributed to vanadium oxide incorporation have increased the number of Non-bridging oxygen (NBO'S).

  15. Amperometric detection and electrochemical oxidation of aliphatic amines and ammonia on silver-lead oxide thin-film electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Ge, Jisheng [Iowa State Univ., Ames, IA (United States)

    1996-01-08

    This thesis comprises three parts: Electrocatalysis of anodic oxygen-transfer reactions: aliphatic amines at mixed Ag-Pb oxide thin-film electrodes; oxidation of ammonia at anodized Ag-Pb eutectic alloy electrodes; and temperature effects on oxidation of ethylamine, alanine, and aquated ammonia.

  16. Cuprous oxide thin films prepared by thermal oxidation of copper layer. Morphological and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Karapetyan, Artak, E-mail: karapetyan@cinam.univ-mrs.fr [Aix Marseille Université, CINaM, 13288, Marseille (France); Institute for Physical Research of NAS of Armenia, Ashtarak-2 0203 (Armenia); Reymers, Anna [Russian-Armenian (Slavonic) University, H.Emin st.123, Yerevan 375051 (Armenia); Giorgio, Suzanne; Fauquet, Carole [Aix Marseille Université, CINaM, 13288, Marseille (France); Sajti, Laszlo [Laser Zentrum Hannover e.V. Hollerithallee 8, 30419 Hannover (Germany); Nitsche, Serge [Aix Marseille Université, CINaM, 13288, Marseille (France); Nersesyan, Manuk; Gevorgyan, Vladimir [Russian-Armenian (Slavonic) University, H.Emin st.123, Yerevan 375051 (Armenia); Marine, Wladimir [Aix Marseille Université, CINaM, 13288, Marseille (France)

    2015-03-15

    Structural and optical characterization of crystalline Cu{sub 2}O thin films obtained by thermal oxidation of Cu films at two different temperatures 800 °C and 900 °C are investigated in this work. X-ray diffraction measurements indicate that synthesized films consist of single Cu{sub 2}O phase without any interstitial phase and show a nano-grain structure. Scanning Electron Microscopy observations indicate that the Cu{sub 2}O films have a micro-scale roughness whereas High Resolution Transmission Electron Microscopy highlights that the nanocrystalline structure is formed by superposition of nearly spherical nanocrystals smaller than 30 nm. Photoluminescence spectra of these films exhibit at room temperature two well-resolved emission peaks at 1.34 eV due to defects energy levels and at 1.97 eV due to phonon-assisted recombination of the 1s orthoexciton in both film series. Emission characteristics depending on the laser power is deeply investigated to determine the origin of recorded emissions. Time-integrated spectra of the 1s orthoexciton emission reveals the presence of oxygen defects below the conduction band edge under non-resonant two-photon excitation using a wide range of excitations wavelengths. Optical absorption coefficients at room temperature are obtained from an accurate analysis of their transmission and reflection spectra, whereas the optical band gap energy is estimated at about 2.11 eV. Results obtained are of high relevance especially for potential applications in semiconductor devices such as solar cells, optical sources and detectors. - Highlights: • Nanostructured Cu{sub 2}O thin films were synthesized by thermal oxidation of Cu films. • The PL spectra of nanostructured thin films revealed two well-resolved emission peaks. • The PL properties were investigated under a broad range of experimental conditions. • Inter-band transition in the infrared range has been associated to V{sub Cu} and V{sub O} vacancies. • Absorption

  17. Modification of oxide films by ion implantation: TiO2-films modified by Ti+ and O+ as example

    International Nuclear Information System (INIS)

    Schultze, J.W.; Elfenthal, L.; Leitner, K.; Meyer, O.

    1988-01-01

    Oxide films can be modified by ion implantation. Changes in the electrochemical properties of the films are due to the deposition profile of the implanted ion, ie doping and stoichiometric changes, as well as to the radiation damage. The latter is due to the formation of Frenkel defects and at high concentrations to a complete amorphization of the oxide film. TiOsub(x)-films with 1 + - and O + -ions into anodic oxide films on titanium. The electrode capacity shows always the behaviour of an n-type semiconductor with an almost constant flatband potential but a strong maximum donor concentration at about 3% Ti + concentration. Oxygen implantation, on the other hand, causes a small increase of donor concentration only at high concentration of O + . Electron transfer reactions show strong modifications of the electronic behaviour of the oxide film with a maximum again at 3% titanium. Photocurrent spectra prove the increasing amorphization and show interband states 2.6 eV above the VB or below the CB. During repassivation measurements at various potentials different defects formed by Ti + - and O + -implantation become mobile. A tentative model of the band structure is constructed which takes into account the interband states due to localised Ti + - and O + -ions. The modification of ion implanted oxide films is compared with the effects of other preparation techniques. (author)

  18. Oxidative desulfurization of synthetic diesel using supported catalysts. Part 3. Support effect on vanadium-based catalysts

    Energy Technology Data Exchange (ETDEWEB)

    Cedeno-Caero, Luis; Gomez-Bernal, Hilda; Fraustro-Cuevas, Adriana; Guerra-Gomez, Hector D.; Cuevas-Garcia, Rogelio [UNICAT, Facultad de Quimica, Universidad Nacional Autonoma de Mexico, Cd. Universitaria 04510, Mexico D.F. (Mexico)

    2008-04-15

    Oxidesulfurization (ODS) of benzothiophenic compounds prevailing in diesel was conducted with hydrogen peroxide in presence of various catalysts, using a model diesel and actual diesel fuel. ODS activities of dibenzothiophenes (DBTs) in hexadecane for a series of V{sub 2}O{sub 5} catalysts supported on alumina, titania, ceria, niobia and silica, were evaluated. Results show that the oxidation activity of DBTs depends on the support used. It was observed that the sulfone yield is not proportional to textural properties or V content. For all catalysts, ODS of benzothiophene (BT), dibenzothiophene (DBT), 4-methyl dibenzothiophene (4-MDBT) and 4,6-dimethyl dibenzothiophene (4,6-DMDBT) decreased in the following order: DBT > 4-MDBT > 4,6-DMDBT > BT. This trend does not depend on the catalyst used or the textural properties of the catalysts and supports. In presence of indole ODS activities diminish, except with catalysts supported on alumina-titania mixed oxide, whereas with V{sub 2}O{sub 5}/TiO{sub 2} catalyst the performance is the highest. ODS of Mexican diesel fuel was carried out in presence of this catalyst and S level was diminished in about 99%. (author)

  19. Vanadium Electrolyte Studies for the Vanadium Redox Battery-A Review.

    Science.gov (United States)

    Skyllas-Kazacos, Maria; Cao, Liuyue; Kazacos, Michael; Kausar, Nadeem; Mousa, Asem

    2016-07-07

    The electrolyte is one of the most important components of the vanadium redox flow battery and its properties will affect cell performance and behavior in addition to the overall battery cost. Vanadium exists in several oxidation states with significantly different half-cell potentials that can produce practical cell voltages. It is thus possible to use the same element in both half-cells and thereby eliminate problems of cross-contamination inherent in all other flow battery chemistries. Electrolyte properties vary with supporting electrolyte composition, state-of-charge, and temperature and this will impact on the characteristics, behavior, and performance of the vanadium battery in practical applications. This Review provides a broad overview of the physical properties and characteristics of the vanadium battery electrolyte under different conditions, together with a description of some of the processing methods that have been developed to produce vanadium electrolytes for vanadium redox flow battery applications. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. A heterojunction photocatalyst composed of zinc rhodium oxide, single crystal-derived bismuth vanadium oxide, and silver for overall pure-water splitting under visible light up to 740 nm.

    Science.gov (United States)

    Kobayashi, Ryoya; Takashima, Toshihiro; Tanigawa, Satoshi; Takeuchi, Shugo; Ohtani, Bunsho; Irie, Hiroshi

    2016-10-12

    We recently reported the synthesis of a solid-state heterojunction photocatalyst consisting of zinc rhodium oxide (ZnRh 2 O 4 ) and bismuth vanadium oxide (Bi 4 V 2 O 11 ), which functioned as hydrogen (H 2 ) and oxygen (O 2 ) evolution photocatalysts, respectively, connected with silver (Ag). Polycrystalline Bi 4 V 2 O 11 (p-Bi 4 V 2 O 11 ) powders were utilized to form ZnRh 2 O 4 /Ag/p-Bi 4 V 2 O 11 , which was able to photocatalyze overall pure-water splitting under red-light irradiation with a wavelength of 700 nm (R. Kobayashi et al., J. Mater. Chem. A, 2016, 4, 3061). In the present study, we replaced p-Bi 4 V 2 O 11 with a powder obtained by pulverizing single crystals of Bi 4 V 2 O 11 (s-Bi 4 V 2 O 11 ) to form ZnRh 2 O 4 /Ag/s-Bi 4 V 2 O 11 , and demonstrated that this heterojunction photocatalyst had enhanced water-splitting activity. In addition, ZnRh 2 O 4 /Ag/s-Bi 4 V 2 O 11 was able to utilize nearly the entire range of visible light up to a wavelength of 740 nm. These properties were attributable to the higher O 2 evolution activity of s-Bi 4 V 2 O 11 .

  1. Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

    Science.gov (United States)

    Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.; Lloyd, Matthew T.; Widjonarko, Nicodemus Edwin; Miedaner, Alexander; Curtis, Calvin J.; Ginley, David S.; Olson, Dana C.

    2017-01-10

    A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

  2. Pathway and Surface Mechanism Studies of 1,3-butadiene Selective Oxidation Over Vanadium-Molybdenum-Oxygen Catalysts

    Energy Technology Data Exchange (ETDEWEB)

    Schroeder, William David [Iowa State Univ., Ames, IA (United States)

    2001-01-01

    The partial oxidation of 1,3-butadiene has been investigated over VMoO catalysts synthesized by sol-gel techniques. Surface areas were 9-14 m2/g, and compositions were within the solid solution regime, i.e. below 15.0 mol % MoO3/(MoO3 + V2O5). Laser Raman Spectroscopy and XRD data indicated that solid solutions were formed, and pre- and post-reaction XPS data indicated that catalyst surfaces contained some V+4 and were further reduced in 1,3-butadiene oxidation. A reaction pathway for 1,3-butadiene partial oxidation to maleic anhydride was shown to involve intermediates such as 3,4-epoxy-1-butene, crotonaldehyde, furan, and 2-butene-1,4-dial. The addition of water to the reaction stream substantially increased catalyst activity and improved selectivity to crotonaldehyde and furan at specific reaction temperatures. At higher water addition concentrations, furan selectivity increased from 12% to over 25%. The catalytic effects of water addition were related to competitive adsorption with various V2O5-based surface sites, including the vanadyl V=O, corner sharing V-O-V and edge sharing V-O oxygen. Higher levels of water addition were proposed to impose acidic character by dissociative adsorption. In addition, a novel combinatorial synthesis technique for VMoO was used to investigate the phase transitions of V2O5, solid solutions of Mo in V2O5, V9Mo6O40, and other reduced VMoO compounds, characterized by laser Raman spectroscopy. The natural composition gradient imposed by the sputter deposition apparatus was used to create VMoO arrays containing 225 samples ranging from 7.0-42 mol% MoO3/(V2O5 + MoO3), determined by EDS analysis.

  3. Comment on "Tunable Design of Structural Colors Produced by Pseudo-1D Photonic Crystals of Graphene Oxide" and Thin-Film Interference from Dried Graphene Oxide Film.

    Science.gov (United States)

    Hong, Seung-Ho; Song, Jang-Kun

    2017-04-01

    The mechanism of the iridescent color reflection from dried thin graphene oxide (GO) film on Si wafer is clarified. Dissimilarly to the photonic crystalline reflection in aqueous GO dispersion, the color reflection in dried GO film originates from the thin film interference. The peak reflection can reach 23% by optimizing the GO thickness and the substrate. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Flexible Electronics Powered by Mixed Metal Oxide Thin Film Transistors

    Science.gov (United States)

    Marrs, Michael

    A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors. Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors. Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs

  5. On the oxidation mechanism of microcrystalline silicon thin films studied by Fourier transform infrared spectroscopy

    NARCIS (Netherlands)

    Bronneberg, A. C.; Smets, A. H. M.; Creatore, M.; M. C. M. van de Sanden,

    2011-01-01

    Insight into the oxidation mechanism of microcrystalline silicon thin films has been obtained by means of Fourier transform infrared spectroscopy. The films were deposited by using the expanding thermal plasma and their oxidation upon air exposure was followed in time. Transmission spectra were

  6. Effect of micro-patterned fluorine-doped tin oxide films on electrochromic properties of Prussian blue films

    International Nuclear Information System (INIS)

    Lee, Kyuha; Kim, A-Young; Park, Ji Hun; Jung, Hun-Gi; Choi, Wonchang; Lee, Hwa Young; Lee, Joong Kee

    2014-01-01

    Graphical abstract: - Highlights: • PB-based ECD employed micro-patterned FTO electrode was fabricated. • Effect of interface morphology on electrochromic characteristics was examined. • Electrochromic properties were enhanced by employing a patterned interface. - Abstract: The effect of interface morphology on electrochromic characteristics was examined for an electrochromic device (ECD). Micro-patterned fluorine-doped tin oxide (FTO) films were fabricated using a photolithography process. Prussian blue (PB) films were then deposited on the patterned FTO films. The surface areas of both PB films and FTO films were increased by patterning. ECDs were assembled using patterned PB/FTO films as the electrochromic electrode, bare FTO films as the counter electrode, and an electrolyte containing LiClO 4 salt. The increased effective surface area of the patterned PB/FTO electrode boosted the mobility of ions at the interphase between the electrolyte and PB electrode, and the electron transfer between PB films and FTO films. As a result, electrochromic properties such as transmittance and response time were significantly improved by employing the patterned FTO films as the transparent conductive oxide layer of the electrochromic electrode

  7. Effect of micro-patterned fluorine-doped tin oxide films on electrochromic properties of Prussian blue films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kyuha [Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Kim, A-Young [Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Department of Material Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Park, Ji Hun; Jung, Hun-Gi; Choi, Wonchang; Lee, Hwa Young [Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Lee, Joong Kee, E-mail: leejk@kist.re.kr [Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of)

    2014-09-15

    Graphical abstract: - Highlights: • PB-based ECD employed micro-patterned FTO electrode was fabricated. • Effect of interface morphology on electrochromic characteristics was examined. • Electrochromic properties were enhanced by employing a patterned interface. - Abstract: The effect of interface morphology on electrochromic characteristics was examined for an electrochromic device (ECD). Micro-patterned fluorine-doped tin oxide (FTO) films were fabricated using a photolithography process. Prussian blue (PB) films were then deposited on the patterned FTO films. The surface areas of both PB films and FTO films were increased by patterning. ECDs were assembled using patterned PB/FTO films as the electrochromic electrode, bare FTO films as the counter electrode, and an electrolyte containing LiClO{sub 4} salt. The increased effective surface area of the patterned PB/FTO electrode boosted the mobility of ions at the interphase between the electrolyte and PB electrode, and the electron transfer between PB films and FTO films. As a result, electrochromic properties such as transmittance and response time were significantly improved by employing the patterned FTO films as the transparent conductive oxide layer of the electrochromic electrode.

  8. Influence of indium doping on the properties of zinc tin oxide films and its application to transparent thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Mu Hee; Ma, Tae Young, E-mail: tyma@gnu.ac.kr

    2014-01-01

    In this study, the effects of indium (In) doping on the properties of zinc tin oxide (ZTO) films are reported. ZTO films were prepared by RF magnetron sputtering followed by In layer deposition, for use as the diffusion source. In order to protect the In layer from peeling, a second ZTO film was deposited on the In film. The annealing at 400 °C for 30 min was carried out to diffuse In atoms into the ZTO films. The structural, optical, and elemental properties of the annealed ZTO/In/ZTO films were investigated by X-ray diffraction, UV/vis spectrophotometry, and X-ray photoluminescence spectroscopy, respectively. The ZTO transparent thin film transistors employing the ZTO/In/ZTO films as the source/drain were prepared, and the effects of the In doped source/drain on the threshold voltage and mobility were characterized and analyzed. - Highlights: • We successfully doped zinc tin oxide (ZTO) films using In as a diffusion source. • Indium (In) was diffused in both directions with the diffusion coefficient of ∼ 4.3 × 10{sup −16} cm{sup 2}/s. • The mobility of ZTO thin film transistor was increased 1.6-times by adopting the In-diffused source/drain.

  9. A nanogravimmetric investigation of the charging processes on ruthenium oxide thin films and their effect on methanol oxidation

    International Nuclear Information System (INIS)

    Santos, M.C.; Cogo, L.; Tanimoto, S.T.; Calegaro, M.L.; Bulhoes, L.O.S

    2006-01-01

    The charging processes and methanol oxidation that occur during the oxidation-reduction cycles in a ruthenium oxide thin film electrode (deposited by the sol-gel method on Pt covered quartz crystals) were investigated by using cyclic voltammetry, chronoamperometry and electrochemical quartz crystal nanobalance techniques. The ruthenium oxide rutile phase structure was determined by X-ray diffraction analysis. The results obtained during the charging of rutile ruthenium oxide films indicate that in the anodic sweep the transition from Ru(II) to Ru(VI) occurs followed by proton de-intercalation. In the cathodic sweep, electron injection occurs followed by proton intercalation, leading to Ru(II). The proton intercalation/de-intercalation processes can be inferred from the mass/charge relationship which gives a slope close to 1 g mol -1 (multiplied by the Faraday constant) corresponding to the molar mass of hydrogen. From the chronoamperometric measurements, charge and mass saturation of the RuO 2 thin films was observed (440 ng cm -2 ) during the charging processes, which is related to the total number of active sites in these films. Using the electrochemical quartz crystal nanobalance technique to study the methanol oxidation reaction at these films was possible to demonstrate that bulk oxidation occurs without the formation of strongly adsorbed intermediates such as CO ads , demonstrating that Pt electrodes modified by ruthenium oxide particles can be promising catalysts for the methanol oxidation as already shown in the literature

  10. Semiconducting properties of oxide and passive films formed on AISI 304 stainless steel and Alloy 600

    Directory of Open Access Journals (Sweden)

    Ferreira M. G. S.

    2002-01-01

    Full Text Available The semiconducting properties of passive films formed on AISI 304 stainless steel and Alloy 600 in borate buffer solution were studied by capacitance (Mott-Schottky approach and photocurrent measurements. Oxide films formed on 304 stainless steel in air at 350 ºC have also been studied. The results obtained show that, in all cases the electronic structure of the films is comparable to that of a p-n heterojunction in which the space charges developed at the metal-film and film-electrolyte interfaces have also to be considered. This is in accordance with analytical results showing that the oxide films are in all cases composed of an inner region rich in chromium oxide and an outer region rich in iron oxide.

  11. Effects of oxygen gas pressure on properties of iron oxide films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Guo, Qixin; Shi, Wangzhou; Liu, Feng; Arita, Makoto; Ikoma, Yoshifumi; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro

    2013-01-01

    Highlights: ► Pulsed laser deposition is a promising technique for growing iron oxide films. ► Crystal structure of the iron oxide films strongly depends on oxygen gas pressure. ► Optimum of the oxygen gas pressure leads single phase magnetite films with high crystal quality. -- Abstract: Iron oxide films were grown on sapphire substrates by pulsed laser deposition at oxygen gas pressures between 1 × 10 −5 and 1 × 10 −1 Pa with a substrate temperature of 600 °C. Atomic force microscope, X-ray diffraction, Raman spectroscopy, X-ray absorption fine structure, and vibrational sample magnetometer analysis revealed that surface morphology and crystal structure of the iron oxide films strongly depend on the oxygen gas pressure during the growth and the optimum oxygen gas pressure range is very narrow around 1 × 10 −3 Pa for obtaining single phase magnetite films with high crystal quality

  12. Local electrical properties of thermally grown oxide films formed on duplex stainless steel surfaces

    Science.gov (United States)

    Guo, L. Q.; Yang, B. J.; He, J. Y.; Qiao, L. J.

    2018-06-01

    The local electrical properties of thermally grown oxide films formed on ferrite and austenite surfaces of duplex stainless steel at different temperatures were investigated by Current sensing atomic force microscopy, X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). The current maps and XPS/AES analyses show that the oxide films covering austenite and ferrite surfaces formed at different temperatures exhibit different local electrical characteristics, thickness and composition. The dependence of electrical conductivity of oxide films covering austenite and ferrite surface on the formation temperature is attributed to the film thickness and semiconducting structures, which is intrinsically related to thermodynamics and kinetics process of film grown at different temperature. This is well elucidated by corresponding semiconductor band structures of oxide films formed on austenite and ferrite phases at different temperature.

  13. FIB-SEM investigation of trapped intermetallic particles in anodic oxide films on AA1050 aluminium

    DEFF Research Database (Denmark)

    Jariyaboon, Manthana; Møller, Per; Dunin-Borkowski, Rafal E.

    2011-01-01

    -containing intermetallic particles incorporated into the anodic oxide films on industrially pure aluminium (AA1050, 99.5 per cent) has been investigated. AA1050 aluminium was anodized in a 100?ml/l sulphuric acid bath with an applied voltage of 14?V at 20°C ±2°C for 10 or 120?min. The anodic film subsequently was analyzed......Purpose - The purpose of this investigation is to understand the structure of trapped intermetallics particles and localized composition changes in the anodized anodic oxide film on AA1050 aluminium substrates. Design/methodology/approach - The morphology and composition of Fe......-shaped particles were embedded in the anodic oxide film as a thin strip structure and located near the top surface of the film, whereas the round-shaped particles were trapped in the film with a spherical structure, but partially dissolved and were located throughout the thickness of the anodic film. The Fe...

  14. Vanadium research recharged

    International Nuclear Information System (INIS)

    Luntz, Stephen

    2011-01-01

    US President Barack Obama has described Maria Skyllas-Kazacos’ research as “one of the coolest things I’ve ever said out loud”. Vanadium redox batteries could be electricity’s ultimate storage mechanism.

  15. On the Design of Oxide Films, Nanomaterials, and Heterostructures for Solar Water Oxidation Photoanodes

    Science.gov (United States)

    Kronawitter, Coleman Xaver

    Photoelectrochemistry and its associated technologies show unique potential to facilitate the large-scale production of solar fuels—those energy-rich chemicals obtained through conversion processes driven by solar energy, mimicking the photosynthetic process of green plants. The critical component of photoelectrochemical devices designed for this purpose is the semiconductor photoelectrode, which must be optically absorptive, chemically stable, and possess the required electronic band alignment with respect to the redox couple of the electrolyte to drive the relevant electrochemical reactions. After many decades of investigation, the primary technological obstacle remains the development of photoelectrode structures capable of efficient and stable conversion of light with visible frequencies, which is abundant in the solar spectrum. Metal oxides represent one of the few material classes that can be made photoactive and remain stable to perform the required functions. The unique range of functional properties of oxides, and especially the oxides of transition metals, relates to their associated diversity of cation oxidation states, cation electronic configurations, and crystal structures. In this dissertation, the use of metal oxide films, nanomaterials, and heterostructures in photoelectrodes enabling the solar-driven oxidation of water and generation of hydrogen fuel is examined. A range of transition- and post-transition-metal oxide material systems and nanoscale architectures is presented. The first chapters present results related to electrodes based on alpha-phase iron(III) oxide, a promising visible-light-active material widely investigated for this application. Studies of porous films fabricated by physical vapor deposition reveal the importance of structural quality, as determined by the deposition substrate temperature, on photoelectrochemical performance. Heterostructures with nanoscale feature dimensionality are explored and reviewed in a later chapter

  16. Metal oxide semiconductor thin-film transistors for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Petti, Luisa; Vogt, Christian; Büthe, Lars; Cantarella, Giuseppe; Tröster, Gerhard [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Münzenrieder, Niko [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Sensor Technology Research Centre, University of Sussex, Falmer (United Kingdom); Faber, Hendrik; Bottacchi, Francesca; Anthopoulos, Thomas D. [Department of Physics and Centre for Plastic Electronics, Imperial College London, London (United Kingdom)

    2016-06-15

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In

  17. Heat treatable indium tin oxide films deposited with high power pulse magnetron sputtering

    International Nuclear Information System (INIS)

    Horstmann, F.; Sittinger, V.; Szyszka, B.

    2009-01-01

    In this study, indium tin oxide (ITO) films were prepared by high power pulse magnetron sputtering [D. J. Christie, F. Tomasel, W. D. Sproul, D. C. Carter, J. Vac. Sci. Technol. A, 22 (2004) 1415. ] without substrate heating. The ITO films were deposited from a ceramic target at a deposition rate of approx. 5.5 nm*m/min kW. Afterwards, the ITO films were covered with a siliconoxynitride film sputtered from a silicon alloy target in order to prevent oxidation of the ITO film during annealing at 650 deg. C for 10 min in air. The optical and electrical properties as well as the texture and morphology of these films were investigated before and after annealing. Mechanical durability of the annealed films was evaluated at different test conditions. The results were compared with state-of-the art ITO films which were obtained at optimized direct current magnetron sputtering conditions

  18. The application of the barrier-type anodic oxidation method to thickness testing of aluminum films

    Science.gov (United States)

    Chen, Jianwen; Yao, Manwen; Xiao, Ruihua; Yang, Pengfei; Hu, Baofu; Yao, Xi

    2014-09-01

    The thickness of the active metal oxide film formed from a barrier-type anodizing process is directly proportional to its formation voltage. The thickness of the consumed portion of the metal film is also corresponding to the formation voltage. This principle can be applied to the thickness test of the metal films. If the metal film is growing on a dielectric substrate, when the metal film is exhausted in an anodizing process, because of the high electrical resistance of the formed oxide film, a sudden increase of the recorded voltage during the anodizing process would occur. Then, the thickness of the metal film can be determined from this voltage. As an example, aluminum films are tested and discussed in this work. This method is quite simple and is easy to perform with high precision.

  19. Thick-film effects in the oxidation and hydriding of zirconium alloys

    International Nuclear Information System (INIS)

    Johnson, A.B. Jr.

    1989-08-01

    One of the fundamental discoveries involving radiation effects on the oxidation of Zircaloy in low-oxygen aqueous environments is the influence of thick oxide films. Zircaloy oxidation rates in low-oxygen (hydrogen-rich) coolants initially proceed at relatively low rates, often almost uninfluenced by radiation. Marked upturns in oxidation rate have signaled the onset of radiation effects. The radiation effects appear to correlate with a threshold oxide thickness. Results of the test reactor experiments lead to formulation of the Thick-Film Hypothesis: beyond a threshold oxide thickness, radiolysis of water that infiltrates oxide cracks and pores controls the oxidation rate; radiation creates microenvironments inside the oxide film, producing highly oxidizing conditions, that are no longer suppressed by the coolant-borne hydrogen. Upturns in oxidation rate on high-exposure Zircaloy pressure tubes add confirmatory evidence for the thick-film effect. This paper summarizes the early evidence for thick-film behavior, including oxidation and hydriding trends, updates confirmatory evidence from Zircaloy reactor and fuel assembly components, and highlights other observations from the test reactor series that have potential fundamental significance to explanations of radiation effects on Zircaloy. 23 refs., 10 figs

  20. Hydrometallurgic treatment of a mineral containing uranium, vanadium and phosphorus

    International Nuclear Information System (INIS)

    Echenique, Patricia; Fruchtenicht, Fernando; Gil, Daniel; Vigo, Daniel; Bouza, Angel; Vert, Gabriela; Becquart, Elena

    1987-01-01

    A preliminary study of a mineral has been made towards the hydrometallurgy separation of uranium,