Sample records for valley electric carrier
-
Electrical control of charged carriers and excitons in atomically thin materials
Wang, Ke; De Greve, Kristiaan; Jauregui, Luis A.; Sushko, Andrey; High, Alexander; Zhou, You; Scuri, Giovanni; Taniguchi, Takashi; Watanabe, Kenji; Lukin, Mikhail D.; Park, Hongkun; Kim, Philip
2018-02-01
Electrical confinement and manipulation of charge carriers in semiconducting nanostructures are essential for realizing functional quantum electronic devices1-3. The unique band structure4-7 of atomically thin transition metal dichalcogenides (TMDs) offers a new route towards realizing novel 2D quantum electronic devices, such as valleytronic devices and valley-spin qubits8. 2D TMDs also provide a platform for novel quantum optoelectronic devices9-11 due to their large exciton binding energy12,13. However, controlled confinement and manipulation of electronic and excitonic excitations in TMD nanostructures have been technically challenging due to the prevailing disorder in the material, preventing accurate experimental control of local confinement and tunnel couplings14-16. Here we demonstrate a novel method for creating high-quality heterostructures composed of atomically thin materials that allows for efficient electrical control of excitations. Specifically, we demonstrate quantum transport in the gate-defined, quantum-confined region, observing spin-valley locked quantized conductance in quantum point contacts. We also realize gate-controlled Coulomb blockade associated with confinement of electrons and demonstrate electrical control over charged excitons with tunable local confinement potentials and tunnel couplings. Our work provides a basis for novel quantum opto-electronic devices based on manipulation of charged carriers and excitons.
-
Electrical control of the anomalous valley Hall effect in antiferrovalley bilayers
Tong, Wen-Yi; Duan, Chun-Gang
2017-08-01
In analogy to all-electric spintronics, all-electric valleytronics, i.e., valley manipulation via electric means, becomes an exciting new frontier as it may bring revolutions in the field of data storage with ultra-high speed and ultra-low power consumption. The existence of the anomalous valley Hall effect in ferrovalley materials demonstrates the possibility of electrical detection for valley polarization. However, in previously proposed valley-polarized monolayers, the anomalous valley Hall effect is controlled by external magnetic fields. Here, through elaborate structural design, we propose the antiferrovally bilayer as an ideal candidate for realizing all-electric valleytronic devices. Using the minimal k.p model, we show that the energy degeneracy between valley indexes in such system can be lifted by electric approaches. Subsequently, the anomalous valley Hall effect strongly depends on the electric field as well. Taking the bilayer VSe2 as an example, all-electric tuning and detecting of anomalous valley Hall effect is confirmed by density-functional theory calculations, indicating that the valley information in such antiferrovalley bilayer can be reversed by an electric field perpendicular to the plane of the system and easily probed through the sign of the Hall voltage.
-
Solid state cloaking for electrical charge carrier mobility control
Zebarjadi, Mona; Liao, Bolin; Esfarjani, Keivan; Chen, Gang
2015-07-07
An electrical mobility-controlled material includes a solid state host material having a controllable Fermi energy level and electrical charge carriers with a charge carrier mobility. At least one Fermi level energy at which a peak in charge carrier mobility is to occur is prespecified for the host material. A plurality of particles are distributed in the host material, with at least one particle disposed with an effective mass and a radius that minimize scattering of the electrical charge carriers for the at least one prespecified Fermi level energy of peak charge carrier mobility. The minimized scattering of electrical charge carriers produces the peak charge carrier mobility only at the at least one prespecified Fermi level energy, set by the particle effective mass and radius, the charge carrier mobility being less than the peak charge carrier mobility at Fermi level energies other than the at least one prespecified Fermi level energy.
-
Completely independent electrical control of spin and valley in a silicene field effect transistor
International Nuclear Information System (INIS)
Zhai, Xuechao; Jin, Guojun
2016-01-01
One-atom-thick silicene is a silicon-based hexagonal-lattice material with buckled structure, where an electron fuses multiple degrees of freedom including spin, sublattice pseudospin and valley. We here demonstrate that a valley-selective spin filter (VSSF) that supports single-valley and single-spin transport can be realized in a silicene field effect transistor constructed of an npn junction, where an antiferromagnetic exchange field and a perpendicular electric field are applied in the p -doped region. The nontrivial VSSF property benefits from an electrically controllable state of spin-polarized single-valley Dirac cone. By reversing the electric field direction, the device can operate as a spin-reversed but valley-unreversed filter due to the dependence of band gap on spin and valley. Further, we find that all the possible spin-valley configurations of VSSF can be achieved just by tuning the electric field. Our findings pave the way to the realization of completely independent electrical control of spin and valley in silicene circuits. (paper)
-
Electrical valley filtering in transition metal dichalcogenides
Hsieh, Tzu-Chi; Chou, Mei-Yin; Wu, Yu-Shu
2018-03-01
This work investigates the feasibility of electrical valley filtering for holes in transition metal dichalcogenides. We look specifically into the scheme that utilizes a potential barrier to produce valley-dependent tunneling rates, and perform the study with both a k .p -based analytic method and a recursive Green's function-based numerical method. The study yields the transmission coefficient as a function of incident energy and transverse wave vector, for holes going through lateral quantum barriers oriented in either armchair or zigzag directions, in both homogeneous and heterogeneous systems. The main findings are the following: (1) The tunneling current valley polarization increases with increasing barrier width or height; (2) both the valley-orbit interaction and band structure warping contribute to valley-dependent tunneling, with the former contribution being manifest in structures with asymmetric potential barriers, and the latter being orientation dependent and reaching maximum for transmission in the armchair direction; and (3) for transmission ˜0.1 , a tunneling current valley polarization of the order of 10 % can be achieved.
-
Optimal decentralized valley-filling charging strategy for electric vehicles
International Nuclear Information System (INIS)
Zhang, Kangkang; Xu, Liangfei; Ouyang, Minggao; Wang, Hewu; Lu, Languang; Li, Jianqiu; Li, Zhe
2014-01-01
Highlights: • An implementable charging strategy is developed for electric vehicles connected to a grid. • A two-dimensional pricing scheme is proposed to coordinate charging behaviors. • The strategy effectively works in decentralized way but achieves the systematic valley filling. • The strategy allows device-level charging autonomy, and does not require a bidirectional communication/control network. • The strategy can self-correct when confronted with adverse factors. - Abstract: Uncoordinated charging load of electric vehicles (EVs) increases the peak load of the power grid, thereby increasing the cost of electricity generation. The valley-filling charging scenario offers a cheaper alternative. This study proposes a novel decentralized valley-filling charging strategy, in which a day-ahead pricing scheme is designed by solving a minimum-cost optimization problem. The pricing scheme can be broadcasted to EV owners, and the individual charging behaviors can be indirectly coordinated. EV owners respond to the pricing scheme by autonomously optimizing their individual charge patterns. This device-level response induces a valley-filling effect in the grid at the system level. The proposed strategy offers three advantages: coordination (by the valley-filling effect), practicality (no requirement for a bidirectional communication/control network between the grid and EV owners), and autonomy (user control of EV charge patterns). The proposed strategy is validated in simulations of typical scenarios in Beijing, China. According to the results, the strategy (1) effectively achieves the valley-filling charging effect at 28% less generation cost than the uncoordinated charging strategy, (2) is robust to several potential affecters of the valley-filling effect, such as (system-level) inaccurate parameter estimation and (device-level) response capability and willingness (which cause less than 2% deviation in the minimal generation cost), and (3) is compatible with
-
2011-04-04
... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Project No. 13124-002] Copper Valley.... Applicant: Copper Valley Electric Association (Copper Valley) d. Name of Project: Allison Creek Project. e.... 791(a)-825(r). g. Applicant Contact: Robert A. Wilkinson, CEO, Copper Valley Electric Association, P.O...
-
Tahir, M.; Krstajić, P. M.; Vasilopoulos, P.
2017-06-01
The recent experimental realization of high-quality WSe2 leads to the possibility of an efficient manipulation of its spin and valley degrees of freedom. Its electronic properties comprise a huge spin-orbit coupling, a direct band gap, and a strong anisotropic lifting of the degeneracy of the valley degree of freedom in a magnetic field. We evaluate its band structure and study ballistic electron transport through single and double junctions (or barriers) on monolayer WSe2 in the presence of spin Ms and valley Mv Zeeman fields and of an electric potential U . The conductance versus the field Ms or Mv decreases in a fluctuating manner. For a single junction, the spin Ps and valley Pv polarizations rise with M =Mv=2 Ms , reach a value of more than 55 % , and become perfect above U ≈45 meV while for a double junction this change can occur for U ≥50 meV and M ≥5 meV. In certain regions of the (M ,U ) plane Pv becomes perfect. The conductance gc, its spin-up and spin-down components, and both polarizations oscillate with the barrier width d . The ability to isolate various carrier degrees of freedom in WSe2 may render it a promising candidate for new spintronic and valleytronic devices.
-
Heat to electricity conversion by cold carrier emissive energy harvesters
International Nuclear Information System (INIS)
Strandberg, Rune
2015-01-01
This paper suggests a method to convert heat to electricity by the use of devices called cold carrier emissive energy harvesters (cold carrier EEHs). The working principle of such converters is explained and theoretical power densities and efficiencies are calculated for ideal devices. Cold carrier EEHs are based on the same device structure as hot carrier solar cells, but works in an opposite way. Whereas a hot carrier solar cell receives net radiation from the sun and converts some of this radiative heat flow into electricity, a cold carrier EEH sustains a net outflux of radiation to the surroundings while converting some of the energy supplied to it into electricity. It is shown that the most basic type of cold carrier EEHs have the same theoretical efficiency as the ideal emissive energy harvesters described earlier by Byrnes et al. In the present work, it is also shown that if the emission from the cold carrier EEH originates from electron transitions across an energy gap where a difference in the chemical potential of the electrons above and below the energy gap is sustained, power densities slightly higher than those given by Byrnes et al. can be achieved
-
2013-01-07
... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Project No. 13124-003] Copper Valley Electric Association, Inc.; Notice of Availability of Environmental Assessment In accordance with the... 47897), the Office of Energy Projects has reviewed Copper Valley Electric Association, Inc.'s...
-
2013-11-29
... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Project No. 13124-005] Copper Valley Electric Association, Inc.; Notice of Availability of Environmental Assessment In accordance with the... 47897), the Office of Energy Projects has reviewed Copper Valley Electric Association, Inc.'s...
-
2013-06-27
... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Project No. 13124-003] Copper Valley Electric Association, Inc.; Notice of Availability of Environmental Assessment In accordance with the... 47897), the Office of Energy Projects has reviewed Copper Valley Electric Association, Inc.'s...
-
2010-04-30
... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Project No. 13124-000] Copper Valley....: 13124-000. c. Applicant: Copper Valley Electric Association. d. Name of Project: Allison Lake Project. e.... 791(a)-825(r). g. Applicant Contact: Robert A. Wilkinson, CEO, Copper Valley Electric Association, P.O...
-
Generation and electric control of spin-valley-coupled circular photogalvanic current in WSe2
Yuan, Hongtao; Hwang, Harold Y.; Cui, Yi
2015-03-01
Compared to the weak spin-orbit-interaction (SOI) in graphene, layered transitionmetal chalcogenides MX2 have heavy 4d/5d elements with strong atomic SOI, providing a unique way to extend functionalities of novel spintronics and valleytronics devices. Such a valley polarization achieved via valley-selective circular dichroism has been predicted theoretically and demonstrated with optical experiments in MX2 systems. Despite the exciting progresses, the generation of a valley/spin current by valley polarization in MX2 remains elusive and a great challenge. A spin/valley current in MX2 compounds caused by such a valley polarization has never been observed, nor its electric-field control. In this talk, we demonstrated, within an electric-double-layer transistor based on WSe2, the manipulation of a spin-coupled valley photocurrent whose direction and magnitude depend on the degree of circular polarization of the incident radiation and can be further greatly modulated with an external electric field. Such room temperature generation and electric control of valley/spin photocurrent provides a new property of electrons in MX2 systems, thereby enabling new degrees of control for quantum-confined spintronics devices. (In collaboration with S.C. Zhang, Y.L. Chen, Z.X. Shen, B Lian, H.J. Zhang, G Xu, Y Xu, B Zhou, X.Q. Wang, B Shen X.F. Fang) Acknowledge the support from DoE, BES, Division of MSE under contract DE-AC02-76SF00515. Acknowledge the support from DoE, BES, Division of MSE under contract DE-AC02-76SF00515.
-
Carrier heating in disordered conjugated polymers in electric field
Energy Technology Data Exchange (ETDEWEB)
Vukmirovic, Nenad; Wang, Lin-Wang
2010-01-26
The electric field dependence of charge carrier transport and the effect of carrier heating in disordered conjugated polymers were investigated. A parameter-free multiscale methodology consisting of classical molecular dynamics simulation for the generation of the atomic structure, large system electronic structure and electron-phonon coupling constants calculations and the procedure for extracting the bulk polymer mobility, was used. The results suggested that the mobility of a fully disordered poly(3-hexylthiophene) (P3HT) polymer increases with electric field which is consistent with the experimental results on samples of regiorandom P3HT and different from the results on more ordered regioregular P3HT polymers, where the opposite trend is often observed at low electric fields. We calculated the electric field dependence of the effective carrier temperature and showed however that the effective temperature cannot be used to replace the joint effect of temperature and electric field, in contrast to previous theoretical results from phenomenological models. Such a difference was traced to originate from the use of simplified Miller-Abrahams hopping rates in phenomenological models in contrast to our considerations that explicitly take into account the electronic state wave functions and the interaction with all phonon modes.
-
2012-07-20
... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Project No. 13124-002] Copper Valley...: Original License Application. b. Project No.: 13124-002. c. Applicant: Copper Valley Electric Association (Copper Valley). d. Name of Project: Allison Creek Project. e. Location: On the south side of Port Valdez...
-
Energy carriers within Europe: electricity and SNG
Energy Technology Data Exchange (ETDEWEB)
Lucas, N J.D.
1977-03-01
The general aim of this paper is to make a case for substitute natural gas as an energy carrier with prospects for growth that are at least as good as those of electricity and a life expectancy as long as one can reasonably plan for. The bulk of the paper analyzes the determinants of commercial competition between SNG and electricity. Space heat is treated in detail because this is generally seen as the area in which rapid expansion of electricity sales is possible. The provision of process heat to industry is dealt with superficially. The principal conclusion is that, for space heating and some industrial process heating and over a wide range of future costs for fossil and nuclear fuels, SNG from the marginal source of bulk fuel will be of lower cost than electricity from an integrated system of nuclear generating stations and fossil-fired stations using the same marginal source of fossil fuel. This conclusion may be difficult to accept because it conflicts with intuition. In Europe now there is a good case for installing more nuclear plants if what is wanted is base-load power. There are also mines producing coal at higher cost than imported oil. The short-term economic pressure, therefore, is to install nuclear plants and retreat from coal. Moreover, natural gas from the North Sea and even LNG from distant sources is cheaper than SNG from indigenous coal is likely to be. If one believes that indigenous oil and gas will be available in large quantities, or if one believes it will be possible to import oil without difficulty or political risk, then it is right to ignore SNG as an energy carrier; but the fashionable perception of the future is that indigenous production and/or imports will be restricted by physical shortage or political constraint so that, at the margin, heat will be supplied from nuclear fuel. In these circumstances SNG appears a better carrier of energy for heat than electricity. (MCW)
-
Directory of Open Access Journals (Sweden)
LI .Jiu-ru
2017-02-01
Full Text Available With the environmental pollution and energy consumption clue to the large difference between peak and valley of power grid，the molten salt heat storage system(MSHSS utilizing solar Energy combined with valley electric is presented for good energy saving and low emissions. The costs of MSHSS utilizing solar Energy combined with valley electric are greatly reduced. The law of heat transfer in molten salt heat storage technology is studied with the method of grey correlation analysis. The results show the effect of elbow sizes on surface convective heat transfer coefficient with different flow velocities.
-
2D Semiconductors for Valley-Polarized LEDs and Photodetectors
Yu, Ting
The recently discovered two-dimensional (2D) semiconductors, such as transitional-metal-dichalcogenide monolayers, have aroused great interest due to the underlying quantum physics and the appealing optoelectronic applications like atomically thin light-emitting diodes (LEDs) and photodetectors. On the one hand, valley-polarized electroluminescence and photocurrent from such monolayers have not caused enough attention but highly demanded as building blocks for the new generation valleytronic applications. On the other hand, most reports on these devices are based on the mechanically exfoliated small samples. Considering real applications, a strategy which could offer mass-product and high compatibility to the current planar processes is greatly demanded. Large-area samples prepared by chemical vapour deposition (CVD) are perfect candidates towards such a goal. Here, we report electrically tunable valley-polarized electroluminescence and the selective spin-valley-coupled photocurrent in optoelectronic devices based on monolayer WS2 and MoS2 grown by CVD, exhibiting large electroluminescence and photocurrent dichroisms of 81% and 60%, respectively. The controllable valley polarization and emission components of the electroluminescence have been realized by varying electrical injection of carriers. For the observed helicity-dependent photocurrent, the circular photogalvanic effect at resonant excitations has been found to take the dominant responsibility.
-
2011-12-19
... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Project No. 13124-003] Copper Valley... Application: Major License. b. Project No.: P-13124-003. c. Date filed: August 30, 2011. d. Applicant: Copper.... 791 (a)-825(r). h. Applicant Contact: Robert A. Wilkinson, CEO, Copper Valley Electric Association...
-
Ang, Yee Sin; Yang, Shengyuan A.; Zhang, C.; Ma, Zhongshui; Ang, L. K.
2017-12-01
Despite much anticipation of valleytronics as a candidate to replace the aging complementary metal-oxide-semiconductor (CMOS) based information processing, its progress is severely hindered by the lack of practical ways to manipulate valley polarization all electrically in an electrostatic setting. Here, we propose a class of all-electric-controlled valley filter, valve, and logic gate based on the valley-contrasting transport in a merging Dirac cones system. The central mechanism of these devices lies on the pseudospin-assisted quantum tunneling which effectively quenches the transport of one valley when its pseudospin configuration mismatches that of a gate-controlled scattering region. The valley polarization can be abruptly switched into different states and remains stable over semi-infinite gate-voltage windows. Colossal tunneling valley-pseudomagnetoresistance ratio of over 10 000 % can be achieved in a valley-valve setup. We further propose a valleytronic-based logic gate capable of covering all 16 types of two-input Boolean logics. Remarkably, the valley degree of freedom can be harnessed to resurrect logical reversibility in two-input universal Boolean gate. The (2 +1 ) polarization states (two distinct valleys plus a null polarization) reestablish one-to-one input-to-output mapping, a crucial requirement for logical reversibility, and significantly reduce the complexity of reversible circuits. Our results suggest that the synergy of valleytronics and digital logics may provide new paradigms for valleytronic-based information processing and reversible computing.
-
Valley polarization in bismuth
Fauque, Benoit
2013-03-01
The electronic structure of certain crystal lattices can contain multiple degenerate valleys for their charge carriers to occupy. The principal challenge in the development of valleytronics is to lift the valley degeneracy of charge carriers in a controlled way. In bulk semi-metallic bismuth, the Fermi surface includes three cigar-shaped electron valleys lying almost perpendicular to the high symmetry axis known as the trigonal axis. The in-plane mass anisotropy of each valley exceeds 200 as a consequence of Dirac dispersion, which drastically reduces the effective mass along two out of the three orientations. According to our recent study of angle-dependent magnetoresistance in bismuth, a flow of Dirac electrons along the trigonal axis is extremely sensitive to the orientation of in-plane magnetic field. Thus, a rotatable magnetic field can be used as a valley valve to tune the contribution of each valley to the total conductivity. As a consequence of a unique combination of high mobility and extreme mass anisotropy in bismuth, the effect is visible even at room temperature in a magnetic field of 1 T. Thus, a modest magnetic field can be used as a valley valve in bismuth. The results of our recent investigation of angle-dependent magnetoresistance in other semi-metals and doped semiconductors suggest that a rotating magnetic field can behave as a valley valve in a multi-valley system with sizeable mass anisotropy.
-
Zhang, Li; Jabbari, Faryar; Brown, Tim; Samuelsen, Scott
2014-12-01
Plug-in electric vehicles (PEVs) shift energy consumption from petroleum to electricity for the personal transportation sector. This work proposes a decentralized charging protocol for PEVs with grid operators updating the cost signal. Each PEV calculates its own optimal charging profile only once based on the cost signal, after it is plugged in, and sends the result back to the grid operators. Grid operators only need to aggregate charging profiles and update the load and cost. The existing PEV characteristics, national household travel survey (NHTS), California Independent System Operator (CAISO) demand, and estimates for future renewable generation in California are used to simulate PEV operation, PEV charging profiles, grid demand, and grid net load (demand minus renewable). Results show the proposed protocol has good performance for overnight net load valley filling if the costs to be minimized are proportional to the net load. Annual results are shown in terms of overnight load variation and comparisons are made with grid level valley filling results. Further, a target load can be approached in the same manner by using the gap between current load and the target load as the cost. The communication effort involved is quite modest.
-
Hu, Xuelu; Wang, Xiao; Fan, Peng; Li, Yunyun; Zhang, Xuehong; Liu, Qingbo; Zheng, Weihao; Xu, Gengzhao; Wang, Xiaoxia; Zhu, Xiaoli; Pan, Anlian
2018-05-09
Metal halide perovskite nanostructures have recently been the focus of intense research due to their exceptional optoelectronic properties and potential applications in integrated photonics devices. Charge transport in perovskite nanostructure is a crucial process that defines efficiency of optoelectronic devices but still requires a deep understanding. Herein, we report the study of the charge transport, particularly the drift of minority carrier in both all-inorganic CsPbBr 3 and organic-inorganic hybrid CH 3 NH 3 PbBr 3 perovskite nanoplates by electric field modulated photoluminescence (PL) imaging. Bias voltage dependent elongated PL emission patterns were observed due to the carrier drift at external electric fields. By fitting the drift length as a function of electric field, we obtained the carrier mobility of about 28 cm 2 V -1 S -1 in the CsPbBr 3 perovskite nanoplate. The result is consistent with the spatially resolved PL dynamics measurement, confirming the feasibility of the method. Furthermore, the electric field modulated PL imaging is successfully applied to the study of temperature-dependent carrier mobility in CsPbBr 3 nanoplates. This work not only offers insights for the mobile carrier in metal halide perovskite nanostructures, which is essential for optimizing device design and performance prediction, but also provides a novel and simple method to investigate charge transport in many other optoelectronic materials.
-
Valley-symmetric quasi-1D transport in ballistic graphene
Lee, Hu-Jong
We present our recent studies on gate-defined valley-symmetric one-dimensional (1D) carrier guiding in ballistic monolayer graphene and valley-symmetry-protected topological 1D transport in ballistic bilayer graphene. Successful carrier guiding was realized in ballistic monolayer graphene even in the absence of a band gap by inducing a high distinction ( more than two orders of magnitude) in the carrier density between the region of a quasi-1D channel and the rest of the top-gated regions. Conductance of a channel shows quantized values in units of 4e2/ h, suggesting that the valley symmetry is preserved. For the latter, the topological 1D conduction was realized between two closely arranged insulating regions with inverted band gaps, induced under a pair of split dual gating with polarities opposite to each other. The maximum conductance along the boundary channel showed 4e2/ h, again with the preserved valley symmetry. The 1D topological carrier guiding demonstrated in this study affords a promising route to robust valleytronic applications and sophisticated valley-associated functionalities based on 2D materials. This work was funded by the National Research Foundation of Korea.
-
2013-10-09
... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Project No. 13124-005] Copper Valley...: Amendment to License. b. Project No: 13124-005. c. Date Filed: September 27, 2013. d. Applicant: Copper..., Copper Valley Electric Association, Inc., P.O. Box 45, Mile 187 Glenn Highway, Glennallen, AK 99588, (907...
-
Assili, Mohamed; Haddad, Sonia; Kang, Woun
2015-03-01
A double peak structure in the magnetophonon resonance (MPR) spectrum of uniaxial strained graphene, under crossed electric and magnetic fields, is predicted. We focus on the Γ point optical phonon modes coupled to the inter-Landau level transitions 0 ⇆±1 where MPR is expected to be more pronounced at high magnetic field. We derive the frequency shifts and the broadenings of the longitudinal and transverse optical phonon modes taking into account the effect of the strain modified electronic spectrum on the electron-phonon coupling. We show that the MPR line for a given phonon mode acquires a double peak structure originating from the twofold valley degeneracy lifting. The latter is due to the different Landau level spacings in the two Dirac valleys resulting from the simultaneous action of the inplane electric field and the strain-induced Dirac cone tilt. We discuss the role of some key parameters such as disorder, strain, doping, and electric field amplitude on the emergence of the double peak structure.
-
Energy Technology Data Exchange (ETDEWEB)
Yarmohammadi, Mohsen, E-mail: m.yarmohammadi69@gmail.com
2017-03-15
In this paper, we have investigated the effects of strain on DC transverse and spin-valley Hall conductivity (SHC-VHC) of two-dimensional buckled materials ferromagnetic graphene's analog, MoS{sub 2} and silicene due to their spin–orbit coupling. The Kubo formalism has been used to investigate the dynamics of carriers under strain along the armchair (AC) direction of systems in the context of the Kane–Mele Hamiltonian and the Dirac cone approximation. The effective mass of carriers increases with strain and this leads to the reduction of their transport. We have found that SHC-VHC changes symmetrically with respect to a critical strain around 13% and 45% for MoS{sub 2} and silicene, respectively. Furthermore, the reflection symmetry of silicene has been broken with electric field and a phase transition to topological insulator for strained ferromagnetic silicene has been seen. - Highlights: • Theoretical calculation of strain effects on band structure of MoS{sub 2} and silicene in the presence of electric field. • Investigation of DC transverse and spin-valley Hall conductivity of strained-MoS{sub 2} and silicene in the presence of electric field. • Theoretical calculation of external electric field effects on topological phase transition of silicene in the presence of strain.
-
Electrical resistivity tomography investigations in the ufita Valley (southern Italy.
Directory of Open Access Journals (Sweden)
C. Basso
2008-06-01
Full Text Available Several Electrical Resistivity Tomography (ERT surveys have been carried out to study the subsurface structural and sedimentary settings of the upper Ufita River valley, and to evaluate their efficiency to distinguish the geological boundary between shallow Quaternary sedimentary deposits and clayey bedrock characterized by moderate resistivity contrast. Five shallow ERTs were carried out across a morphological scarp running at the foot of the northeastern slope of the valley. This valley shoulder is characterized by a set of triangular facets, that some authors associated to the presence of a SW-dipping normal fault. The geological studies allow us to interpret the shallow ERTs results obtaining a resistivity range for each Quaternary sedimentary deposit. The tomographies showed the geometrical relationships of alluvial and slope deposits, having a maximum thickness of 30-40 m, and the morphology of the bedrock. The resistivity range obtained for each sedimentary body has been used for calibrating the tomographic results of one 3560m-long deep ERT carried out across the deeper part of the intramountain depression with an investigation depth of about 170 m. The deep resistivity result highlighted the complex alluvial setting, characterized by alternating fine grained lacustrine deposits and coarser gravelly fluvial sediments.
-
Energy Technology Data Exchange (ETDEWEB)
Herman Atkins, Shoshone-Paiute; Mark Hannifan, New West Technologies
2005-06-30
A range of sustainable energy options were assessed for feasibility in addressing chronic electric grid reliability problems at Duck Valley IR. Wind power and building energy efficiency were determined to have the most merit, with the Duck Valley Tribes now well positioned to pursue large scale wind power development for on- and off-reservation sales.
-
Electrical and optical transport properties of single layer WSe2
Tahir, M.
2018-03-01
The electronic properties of single layer WSe2 are distinct from the famous graphene due to strong spin orbit coupling, a huge band gap and an anisotropic lifting of the degeneracy of the valley degree of freedom under Zeeman field. In this work, band structure of the monolayer WSe2 is evaluated in the presence of spin and valley Zeeman fields to study the electrical and optical transport properties. Using Kubo formalism, an explicit expression for the electrical Hall conductivity is examined at finite temperatures. The electrical longitudinal conductivity is also evaluated. Further, the longitudinal and Hall optical conductivities are analyzed. It is observed that the contributions of the spin-up and spin-down states to the power absorption spectrum depend on the valley index. The numerical results exhibit absorption peaks as a function of photon energy, ℏ ω, in the range ∼ 1.5 -2 eV. Also, the optical response lies in the visible frequency range in contrast to the conventional two-dimensional electron gas or graphene where the response is limited to terahertz regime. This ability to isolate carriers in spin-valley coupled structures may make WSe2 a promising candidate for future spintronics, valleytronics and optical devices.
-
Rashidi, A.; Nami, M.; Monavarian, M.; Aragon, A.; DaVico, K.; Ayoub, F.; Mishkat-Ul-Masabih, S.; Rishinaramangalam, A.; Feezell, D.
2017-07-01
This work describes a small-signal microwave method for determining the differential carrier lifetime and transport effects in electrically injected InGaN/GaN light-emitting diodes (LEDs). By considering the carrier diffusion, capture, thermionic escape, and recombination, the rate equations are used to derive an equivalent small-signal electrical circuit for the LEDs, from which expressions for the input impedance and modulation response are obtained. The expressions are simultaneously fit to the experimental data for the input impedance and modulation response for nonpolar InGaN/GaN micro-LEDs on free-standing GaN substrates. The fittings are used to extract the transport related circuit parameters and differential carrier lifetimes. The dependence of the parameters on the device diameter and current density is reported. We also derive approximations for the modulation response under low and high injection levels and show that the transport of carriers affects the modulation response of the device, especially at low injection levels. The methods presented are relevant to the design of high-speed LEDs for visible-light communication.
-
Non-permeable substrate carrier for electroplating
Abas, Emmanuel Chua; Chen, Chen-An; Ma, Diana Xiaobing; Ganti, Kalyana Bhargava
2012-11-27
One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The substrate carrier comprises a non-conductive carrier body on which the substrates are to be held. Electrically-conductive lines are embedded within the carrier body, and a plurality of contact clips are coupled to the electrically-conductive lines embedded within the carrier body. The contact clips hold the substrates in place and electrically couple the substrates to the electrically-conductive lines. The non-conductive carrier body is continuous so as to be impermeable to flow of electroplating solution through the non-conductive carrier body. Other embodiments, aspects and features are also disclosed.
-
Direct measurement of exciton valley coherence in monolayer WSe2
Hao, Kai; Moody, Galan; Wu, Fengcheng; Dass, Chandriker Kavir; Xu, Lixiang; Chen, Chang Hsiao; Sun, Liuyang; Li, Ming-yang; Li, Lain-Jong; MacDonald, Allan H.; Li, Xiaoqin
2016-01-01
In crystals, energy band extrema in momentum space can be identified by a valley index. The internal quantum degree of freedom associated with valley pseudospin indices can act as a useful information carrier, analogous to electronic charge
-
International Nuclear Information System (INIS)
Dinh Nhu Thao
2008-01-01
We have applied a self-consistent ensemble Monte Carlo simulation procedure using an extended valley model to consider the THz radiation from GaAs p-i-n diodes under high electric fields. The present calculation has shown an important improvement of the numerical results when using this model instead of the usual valley model. It has been shown the importance of the full band-structure in the simulation of processes in semiconductors, especially under the influence of high electric fields. (author)
-
2012-08-10
... rail carrier. As a result of this transaction, PVR will provide common carrier rail service over the rail lines owned by PVS between Pecos and Saragosa. PVR states that the lease agreement between PVS and... the Pecos Valley Southern Railway Company (PVS) and operate 24 miles of rail line located between...
-
Sieradzki, A; Kuznicki, Z T
2013-01-01
The ultrafast reflectivity of silicon, excited and probed with femtosecond laser pulses, is studied for different wavelengths and energy densities. The confinement of carriers in a thin surface layer delimited by a nanoscale Si-layered system buried in a Si heavily-doped wafer reduces the critical density of carriers necessary to create the electron plasma by a factor of ten. We performed two types of reflectivity measurements, using either a single beam or two beams. The plasma strongly depends on the photon energy density because of the intervalley scattering of the electrons revealed by two different mechanisms assisted by the electron-phonon interaction. One mechanism leads to a negative differential reflectivity that can be attributed to an induced absorption in X valleys. The other mechanism occurs, when the carrier population is thermalizing and gives rise to a positive differential reflectivity corresponding to Pauli-blocked intervalley gamma to X scattering. These results are important for improving the efficiency of Si light-to-electricity converters, in which there is a possibility of multiplying carriers by nanostructurization of Si.
-
Energy Technology Data Exchange (ETDEWEB)
Schneemann, Matthias; Carius, Reinhard; Rau, Uwe [IEK5-Photovoltaics, Forschungszentrum Jülich, Jülich 52425 (Germany); Kirchartz, Thomas, E-mail: t.kirchartz@fz-juelich.de [IEK5-Photovoltaics, Forschungszentrum Jülich, Jülich 52425 (Germany); Faculty of Engineering and CENIDE, University of Duisburg-Essen, Carl-Benz-Str. 199, Duisburg 47057 (Germany)
2015-05-28
This paper studies the effective electrical size and carrier multiplication of breakdown sites in multi-crystalline silicon solar cells. The local series resistance limits the current of each breakdown site and is thereby linearizing the current-voltage characteristic. This fact allows the estimation of the effective electrical diameters to be as low as 100 nm. Using a laser beam induced current (LBIC) measurement with a high spatial resolution, we find carrier multiplication factors on the order of 30 (Zener-type breakdown) and 100 (avalanche breakdown) as new lower limits. Hence, we prove that also the so-called Zener-type breakdown is followed by avalanche multiplication. We explain that previous measurements of the carrier multiplication using thermography yield results higher than unity, only if the spatial defect density is high enough, and the illumination intensity is lower than what was used for the LBIC method. The individual series resistances of the breakdown sites limit the current through these breakdown sites. Therefore, the measured multiplication factors depend on the applied voltage as well as on the injected photocurrent. Both dependencies are successfully simulated using a series-resistance-limited diode model.
-
Energy Technology Data Exchange (ETDEWEB)
Sinyavskii, E. P., E-mail: sinyavskii@gmail.com [Academy of Sciences of Moldova, Institute of Applied Physics (Moldova, Republic of); Karapetyan, S. A., E-mail: karapetyan.sa@gmail.com [Shevchenko Pridnestrovskii State University (Moldova, Republic of)
2011-08-15
The mobility of charge carriers {mu} in a parabolic quantum well in an electric field E directed along the size-confinement axis is calculated. With consideration for scattering of charge carriers at a rough surface, the mobility {mu} is shown to decrease with increasing E. A physical interpretation of this effect is proposed.
-
2012-03-01
... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Project No. 13124-003] Copper Valley Electric Association, Inc.; Notice of Extension of Time for Filing of Comments, Final Terms and Conditions, Recommendations, and Prescriptions As stated in a letter dated January 27, 2012, in this proceeding by the...
-
International Nuclear Information System (INIS)
Ganichev, S. D.; Ziemann, E.; Prettl, W.; Yassievich, I. N.; Istratov, A. A.; Weber, E. R.
2000-01-01
The enhancement of the emission rate of charge carriers from deep-level defects in electric field is routinely used to determine the charge state of the defects. However, only a limited number of defects can be satisfactorily described by the Poole-Frenkel theory. An electric field dependence different from that expected from the Poole-Frenkel theory has been repeatedly reported in the literature, and no unambiguous identification of the charge state of the defect could be made. In this article, the electric field dependencies of emission of carriers from DX centers in Al x Ga 1-x As:Te, Cu pairs in silicon, and Ge:Hg have been studied applying static and terahertz electric fields, and analyzed by using the models of Poole-Frenkel and phonon assisted tunneling. It is shown that phonon assisted tunneling and Poole-Frenkel emission are two competitive mechanisms of enhancement of emission of carriers, and their relative contribution is determined by the charge state of the defect and by the electric-field strength. At high-electric field strengths carrier emission is dominated by tunneling independently of the charge state of the impurity. For neutral impurities, where Poole-Frenkel lowering of the emission barrier does not occur, the phonon assisted tunneling model describes well the experimental data also in the low-field region. For charged impurities the transition from phonon assisted tunneling at high fields to Poole-Frenkel effect at low fields can be traced back. It is suggested that the Poole-Frenkel and tunneling models can be distinguished by plotting logarithm of the emission rate against the square root or against the square of the electric field, respectively. This analysis enables one to unambiguously determine the charge state of a deep-level defect. (c) 2000 The American Physical Society
-
Photon wavelength dependent valley photocurrent in multilayer MoS2
Guan, Hongming; Tang, Ning; Xu, Xiaolong; Shang, LiangLiang; Huang, Wei; Fu, Lei; Fang, Xianfa; Yu, Jiachen; Zhang, Caifeng; Zhang, Xiaoyue; Dai, Lun; Chen, Yonghai; Ge, Weikun; Shen, Bo
2017-12-01
The degree of freedom (DOF) of the K (K') valley in transition-metal dichalcogenides, especially molybdenum disulfide (MoS2), offers an opportunity for next-generation valleytronics devices. In this work, the K (K') valley DOF of multilayer MoS2 is studied by means of the photon wavelength dependent circular photogalvanic effect (CPGE) at room temperature upon a strong external out-of-plane electric field induced by an ionic liquid (IL) gate, which breaks the spatial-inversion symmetry. It is demonstrated that only on resonant excitations in the K (K') valley can the valley-related CPGE signals in multilayer MoS2 with an IL gate be detected, indicating that the valley contrast is indeed regenerated between the K and K' valleys when the electric field is applied. As expected, it can also be seen that the K (K') valley DOF in multilayer MoS2 can be modulated by the external electric field. The observation of photon wavelength dependent valley photocurrent in multilayer MoS2, with the help of better Ohmic contacts, may pave a way for optoelectronic applications of valleytronics in the future.
-
Welchko, Brian A [Torrance, CA
2012-02-14
Systems and methods are provided for pulse-width modulated control of power inverter using phase-shifted carrier signals. An electrical system comprises an energy source and a motor. The motor has a first set of windings and a second set of windings, which are electrically isolated from each other. An inverter module is coupled between the energy source and the motor and comprises a first set of phase legs coupled to the first set of windings and a second set of phase legs coupled to the second set of windings. A controller is coupled to the inverter module and is configured to achieve a desired power flow between the energy source and the motor by modulating the first set of phase legs using a first carrier signal and modulating the second set of phase legs using a second carrier signal. The second carrier signal is phase-shifted relative to the first carrier signal.
-
Nair, Madhavan; Guduru, Rakesh; Liang, Ping; Hong, Jeongmin; Sagar, Vidya; Khizroev, Sakhrat
2013-01-01
Although highly active anti-retroviral therapy has resulted in remarkable decline in the morbidity and mortality in AIDS patients, inadequately low delivery of anti-retroviral drugs across the blood-brain barrier results in virus persistence. The capability of high-efficacy-targeted drug delivery and on-demand release remains a formidable task. Here we report an in vitro study to demonstrate the on-demand release of azidothymidine 5'-triphosphate, an anti-human immunodeficiency virus drug, from 30 nm CoFe2O4@BaTiO3 magneto-electric nanoparticles by applying a low alternating current magnetic field. Magneto-electric nanoparticles as field-controlled drug carriers offer a unique capability of field-triggered release after crossing the blood-brain barrier. Owing to the intrinsic magnetoelectricity, these nanoparticles can couple external magnetic fields with the electric forces in drug-carrier bonds to enable remotely controlled delivery without exploiting heat. Functional and structural integrity of the drug after the release was confirmed in in vitro experiments with human immunodeficiency virus-infected cells and through atomic force microscopy, spectrophotometry, Fourier transform infrared and mass spectrometry studies.
-
Carrier mobility and scattering lifetime in electric double-layer gated few-layer graphene
Energy Technology Data Exchange (ETDEWEB)
Piatti, E.; Galasso, S.; Tortello, M.; Nair, J.R.; Gerbaldi, C. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, 10129 Torino (Italy); Bruna, M.; Borini, S. [Istituto Nazionale di Ricerca Metrologica (INRIM), 10135 Torino (Italy); Daghero, D. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, 10129 Torino (Italy); Gonnelli, R.S., E-mail: renato.gonnelli@polito.it [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, 10129 Torino (Italy)
2017-02-15
Highlights: • We fabricated few-layer graphene FETs by mechanical exfoliation and standard microfabrication techniques. • We employed a Li-TFSI based ion gel to induce carrier densities as high as ≈6e14 e{sup −}/cm{sup 2} in the devices' channel. • We found a strong asymmetry in the sheet conductance and mobility doping dependences between electron and hole doping. • We combined the experimental results with ab initio DFT calculations to obtain the average scattering lifetime of the charge carriers. • We found that the increase in the carrier density and an unexpected increase in the density of charged scattering centers compete in determining the scattering lifetime. - Abstract: We fabricate electric double-layer field-effect transistor (EDL-FET) devices on mechanically exfoliated few-layer graphene. We exploit the large capacitance of a polymeric electrolyte to study the transport properties of three, four and five-layer samples under a large induced surface charge density both above and below the glass transition temperature of the polymer. We find that the carrier mobility shows a strong asymmetry between the hole and electron doping regime. We then employ ab initio density functional theory (DFT) calculations to determine the average scattering lifetime from the experimental data. We explain its peculiar dependence on the carrier density in terms of the specific properties of the electrolyte we used in our experiments.
-
Zhai, Xuechao; Wang, Yun-Tong; Wen, Rui; Wang, Shu-Xuan; Tian, Yue; Zhou, Xingfei; Chen, Wei; Yang, Zhihong
2018-02-01
Silicene and germanene, as graphenelike materials with observable spin-orbit couplings and two distinctive valleys, have potential applications in future low-dissipation spintronics and valleytronics. We here propose a magnetic system of silicene or germanene intercalated between two ferromagetic (FM) dielectric layers, and find that the system with a proximity-induced asymmetric magnetic field supports an attractive phenomenon named the valley-locked spin-dependent Seebeck effect (VL-SSE) driven by a thermal gradient. The VL-SSE indicates that the carries from only one valley could be thermally excited, with opposite spin polarization counterpropagating along the thermal gradient direction, while nearly no carrier from the other insulating valley is excited due to the relatively wide band gap. It is also illustrated that the VL-SSE here does not survive in the usual FM or anti-FM systems, and can be destroyed by the overlarge temperature broadening. Moreover, we prove that the signal for VL-SSE can be weakened gradually with the enhancement of the local interlayer electric field, and be strengthened lineally by increasing the source-drain temperature difference in a caloritronic field effect transistor. Further calculations indicate that the VL-SSE is robust against many perturbations, including the global and local Fermi levels as well as the magnetic strength. These findings about the valley-locked thermospin effect provide a nontrivial and convenient dimension to control the quantum numbers of spin and valley and are expected to be applied in future spin-valley logic circuits and energy-saving devices.
-
Direct measurement of exciton valley coherence in monolayer WSe2
Hao, Kai
2016-02-29
In crystals, energy band extrema in momentum space can be identified by a valley index. The internal quantum degree of freedom associated with valley pseudospin indices can act as a useful information carrier, analogous to electronic charge or spin. Interest in valleytronics has been revived in recent years following the discovery of atomically thin materials such as graphene and transition metal dichalcogenides. However, the valley coherence time—a crucial quantity for valley pseudospin manipulation—is difficult to directly probe. In this work, we use two-dimensional coherent spectroscopy to resonantly generate and detect valley coherence of excitons (Coulomb-bound electron–hole pairs) in monolayer WSe2 (refs ,). The imposed valley coherence persists for approximately one hundred femtoseconds. We propose that the electron–hole exchange interaction provides an important decoherence mechanism in addition to exciton population recombination. This work provides critical insight into the requirements and strategies for optical manipulation of the valley pseudospin for future valleytronics applications.
-
Basak, Tista; Basak, Tushima
2018-02-01
In this paper, we demonstrate that the optical properties of finite-sized graphene quantum dots can be effectively controlled by doping it with different types of charge carriers (electron/hole). In addition, the role played by a suitably directed external electric field on the optical absorption of charge-doped graphene quantum dots have also been elucidated. The computations have been performed on diamond-shaped graphene quantum dot (DQD) within the framework of the Pariser-Parr-Pople (PPP) model Hamiltonian, which takes into account long-range Coulomb interactions. Our results reveal that the energy band-gap increases when the DQD is doped with holes while it decreases on doping it with electrons. Further, the optical absorption spectra of DQD exhibits red/blue-shift on doping with electrons/holes. Our computations also indicate that the application of external transverse electric field results in a substantial blue-shift of the optical spectrum for charge-doped DQD. However, it is observed that the influence of charge-doping is more prominent in tuning the optical properties of finite-sized graphene quantum dots as compared to externally applied electric field. Thus, tailoring the optical properties of finite-sized graphene quantum dots by manipulative doping with charge carriers and suitably aligned external electric field can greatly enhance its potential application in designing nano-photonic devices.
-
Freund, Friedemann T.; Freund, Minoru M.
2012-01-01
The prevailing view in the geophysics community is that the electrical conductivity structure of the Earth's continental crust over the 5-35 km depth range can best be understood by assuming the presence of intergranular fluids and/or of intragranular carbon films. Based on single crystal studies of melt-grown MgO, magma-derived sanidine and anorthosite feldspars and upper mantle olivine, we present evidence for the presence of electronic charge carriers, which derive from peroxy defects that are introduced during cooling, under non-equilibrium conditions, through a redox conversion of pairs of solute hydroxyl arising from dissolution of H2O.The peroxy defects become thermally activated in a 2-step process, leading to the release of defect electrons in the oxygen anion sublattice. Known as positive holes and symbolized by h(dot), these electronic charge carriers are highly mobile. Chemically equivalent to O(-) in a matrix of O(2-) they are highly oxidizing. Being metastable they can exist in the matrix of minerals, which crystallized in highly reduced environments. The h(dot) are highly mobile. They appear to control the electrical conductivity of crustal rocks in much of the 5-35 km depth range.
-
Spin-valley dynamics of electrically driven ambipolar carbon-nanotube quantum dots
Osika, E. N.; Chacón, A.; Lewenstein, M.; Szafran, B.
2017-07-01
An ambipolar n-p double quantum dot defined by potential variation along a semiconducting carbon-nanotube is considered. We focus on the (1e,1h) charge configuration with a single excess electron of the conduction band confined in the n-type dot and a single missing electron in the valence band state of the p-type dot for which lifting of the Pauli blockade of the current was observed in the electric-dipole spin resonance (Laird et al 2013 Nat. Nanotechnol. 8 565). The dynamics of the system driven by periodic electric field is studied with the Floquet theory and the time-dependent configuration interaction method with the single-electron spin-valley-orbitals determined for atomistic tight-binding Hamiltonian. We find that the transitions lifting the Pauli blockade are strongly influenced by coupling to a vacuum state with an empty n dot and a fully filled p dot. The coupling shifts the transition energies and strongly modifies the effective g factors for axial magnetic field. The coupling is modulated by the bias between the dots but it appears effective for surprisingly large energy splitting between the (1e,1h) ground state and the vacuum (0e, 0h) state. Multiphoton transitions and high harmonic generation effects are also discussed.
-
Peacock, Jared R.; Mangan, Margaret T.; McPhee, Darcy K.; Wannamaker, Phil E.
2016-01-01
Though shallow flow of hydrothermal fluids in Long Valley Caldera, California, has been well studied, neither the hydrothermal source reservoir nor heat source has been well characterized. Here a grid of magnetotelluric data were collected around the Long Valley volcanic system and modeled in 3-D. The preferred electrical resistivity model suggests that the source reservoir is a narrow east-west elongated body 4 km below the west moat. The heat source could be a zone of 2–5% partial melt 8 km below Deer Mountain. Additionally, a collection of hypersaline fluids, not connected to the shallow hydrothermal system, is found 3 km below the medial graben, which could originate from a zone of 5–10% partial melt 8 km below the south moat. Below Mammoth Mountain is a 3 km thick isolated body containing fluids and gases originating from an 8 km deep zone of 5–10% basaltic partial melt.
-
Intelligent electric vehicle charging: Rethinking the valley-fill
Valentine, Keenan; Temple, William G.; Zhang, K. Max
This study proposes an intelligent PEV charging scheme that significantly reduces power system cost while maintaining reliability compared to the widely discussed valley-fill method of aggregated charging in the early morning. This study considers optimal PEV integration into the New York Independent System Operator's (NYISO) day-ahead and real-time wholesale energy markets for 21 days in June, July, and August of 2006, a record-setting summer for peak load. NYISO market and load data is used to develop a statistical Locational Marginal Price (LMP) and wholesale energy cost model. This model considers the high cost of ramping generators at peak-load and the traditional cost of steady-state operation, resulting in a framework with two competing cost objectives. Results show that intelligent charging assigns roughly 80% of PEV load to valley hours to take advantage of low steady-state cost, while placing the remaining 20% equally at shoulder and peak hours to reduce ramping cost. Compared to unregulated PEV charging, intelligent charging reduces system cost by 5-16%; a 4-9% improvement over the flat valley-fill approach. Moreover, a Charge Flexibility Constraint (CFC), independent of market modeling, is constructed from a vehicle-at-home profile and the mixture of Level 1 and Level 2 charging infrastructure. The CFC is found to severely restrict the ability to charge vehicles during the morning load valley. This study further shows that adding more Level 2 chargers without regulating PEV charging will significantly increase wholesale energy cost. Utilizing the proposed intelligent PEV charging method, there is a noticeable reduction in system cost if the penetration of Level 2 chargers is increased from 70/30 to 50/50 (Level 1/Level 2). However, the system benefit is drastically diminished for higher penetrations of Level 2 chargers.
-
Valley and spin thermoelectric transport in ferromagnetic silicene junctions
International Nuclear Information System (INIS)
Ping Niu, Zhi; Dong, Shihao
2014-01-01
We have investigated the valley and spin resolved thermoelectric transport in a normal/ferromagnetic/normal silicene junction. Due to the coupling between the valley and spin degrees of freedom, thermally induced pure valley and spin currents can be demonstrated. The magnitude and sign of these currents can be manipulated by adjusting the ferromagnetic exchange field and local external electric field, thus the currents are controllable. We also find fully valley and/or spin polarized currents. Similar to the currents, owing to the band structure symmetry, tunable pure spin and/or valley thermopowers with zero charge counterpart are generated. The results obtained here suggest a feasible way of generating a pure valley (spin) current and thermopower in silicene
-
Valley-orbit hybrid states in Si quantum dots
Gamble, John; Friesen, Mark; Coppersmith, S. N.
2013-03-01
The conduction band for electrons in layered Si nanostructures oriented along (001) has two low-lying valleys. Most theoretical treatments assume that these valleys are decoupled from the long-wavelength physics of electron confinement. In this work, we show that even a minimal amount of disorder (a single atomic step at the quantum well interface) is sufficient to mix valley states and electron orbitals, causing a significant distortion of the long-wavelength electron envelope. For physically realistic electric fields and dot sizes, this valley-orbit coupling impacts all electronic states in Si quantum dots, implying that one must always consider valley-orbit hybrid states, rather than distinct valley and orbital degrees of freedom. We discuss the ramifications of our results on silicon quantum dot qubits. This work was supported in part by ARO (W911NF-08-1-0482) and NSF (DMR-0805045).
-
Multipactor susceptibility on a dielectric with two carrier frequencies
Iqbal, Asif; Verboncoeur, John; Zhang, Peng
2018-04-01
This work investigates multipactor discharge on a single dielectric surface with two carrier frequencies of an rf electric field. We use Monte Carlo simulations and analytical calculations to obtain susceptibility diagrams in terms of the rf electric field and normal electric field due to the residual charge on the dielectric. It is found that in contrast to the single frequency case, in general, the presence of a second carrier frequency of the rf electric field increases the threshold of the magnitude of the rf electric field to initiate multipactor. The effects of the relative strength and phase, and the frequency separation of the two carrier frequencies are examined. The conditions to minimize mulitpactor are derived.
-
Energy Band Gap Dependence of Valley Polarization of the Hexagonal Lattice
Ghalamkari, Kazu; Tatsumi, Yuki; Saito, Riichiro
2018-02-01
The origin of valley polarization of the hexagonal lattice is analytically discussed by tight binding method as a function of energy band gap. When the energy gap decreases to zero, the intensity of optical absorption becomes sharp as a function of k near the K (or K') point in the hexagonal Brillouin zone, while the peak intensity at the K (or K') point keeps constant with decreasing the energy gap. When the dipole vector as a function of k can have both real and imaginary parts that are perpendicular to each other in the k space, the valley polarization occurs. When the dipole vector has only real values by selecting a proper phase of wave functions, the valley polarization does not occur. The degree of the valley polarization may show a discrete change that can be relaxed to a continuous change of the degree of valley polarization when we consider the life time of photo-excited carrier.
-
Meisel, K.D.; Pasveer, W.F.; Cottaar, J.; Tanase, C.; Coehoorn, R.; Bobbert, P.A.; Blom, P.W.M.; Leeuw, D.M. de; Michels, M.A.J.
2006-01-01
We model charge transport in disordered semiconducting polymers by hopping of charge carriers on a square lattice of sites with Gaussian on-site energy disorder, using Fermi-Dirac statistics. From numerically exact solutions of the Master equation, we study the dependence of the charge-carrier
-
Valley Hall effect and Nernst effect in strain engineered graphene
Niu, Zhi Ping; Yao, Jian-ming
2018-04-01
We theoretically predict the existence of tunneling valley Hall effect and Nernst effect in the normal/strain/normal graphene junctions, where a strained graphene is sandwiched by two normal graphene electrodes. By applying an electric bias a pure transverse valley Hall current with longitudinal charge current is generated. If the system is driven by a temperature bias, a valley Nernst effect is observed, where a pure transverse valley current without charge current propagates. Furthermore, the transverse valley current can be modulated by the Fermi energy and crystallographic orientation. When the magnetic field is further considered, we obtain a fully valley-polarized current. It is expected these features may be helpful in the design of the controllable valleytronic devices.
-
Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity
Wan, Yi
2017-12-19
Engineering the substrate of 2D transition metal dichalcogenides can couple the quasiparticle interaction between the 2D material and substrate, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as realization of a 12-time increased valley spitting in single-layer WSe2 through the interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below 60 mV dec−1 at room temperature based on bilayer n-MoS2 and heavily doped p-germanium, etc. Here, it is demonstrated that epitaxially grown single-layer MoS2 on a lattice-matched GaN substrate, possessing a type-I band alignment, exhibits strong substrate-induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers through electron–phonon interaction, resulting in a short exciton lifetime in the MoS2/GaN heterostructure. This interaction enables an enhanced valley helicity at room temperature (0.33 ± 0.05) observed in both steady-state and time-resolved circularly polarized photoluminescence measurements. The findings highlight the importance of substrate engineering for modulating the intrinsic valley carriers in ultrathin 2D materials and potentially open new paths for valleytronics and valley-optoelectronic device applications.
-
Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity
Wan, Yi; Xiao, Jun; Li, Jingzhen; Fang, Xin; Zhang, Kun; Fu, Lei; Li, Pan; Song, Zhigang; Zhang, Hui; Wang, Yilun; Zhao, Mervin; Lu, Jing; Tang, Ning; Ran, Guangzhao; Zhang, Xiang; Ye, Yu; Dai, Lun
2017-01-01
Engineering the substrate of 2D transition metal dichalcogenides can couple the quasiparticle interaction between the 2D material and substrate, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as realization of a 12-time increased valley spitting in single-layer WSe2 through the interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below 60 mV dec−1 at room temperature based on bilayer n-MoS2 and heavily doped p-germanium, etc. Here, it is demonstrated that epitaxially grown single-layer MoS2 on a lattice-matched GaN substrate, possessing a type-I band alignment, exhibits strong substrate-induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers through electron–phonon interaction, resulting in a short exciton lifetime in the MoS2/GaN heterostructure. This interaction enables an enhanced valley helicity at room temperature (0.33 ± 0.05) observed in both steady-state and time-resolved circularly polarized photoluminescence measurements. The findings highlight the importance of substrate engineering for modulating the intrinsic valley carriers in ultrathin 2D materials and potentially open new paths for valleytronics and valley-optoelectronic device applications.
-
Energy Technology Data Exchange (ETDEWEB)
Cui, Xiaojin [Department of Physical Electronics, Tokyo Institute of Technology 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552 (Japan); State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa, E-mail: iwamoto@pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)
2013-12-21
By using displacement current measurement (DCM) and electric-field-induced optical second-harmonic generation (EFISHG) measurement, we studied the carrier behavior in the indium-tin oxide (ITO)/Poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))/C60/Au(or Al) capacitors. Two DCM peaks appeared asymmetrically at around −35.5 V and +30.0 V in the dark. Correspondingly, the EFISHG response from the C60 layer was observed, but the peak positions were different with respect to DCM ones. The results show that the spontaneous polarization of the ferroelectric P(VDF-TrFE) polymeric layer directly affects the electric field in the C60 layer, and thus governs the carrier motion in this layer. As a result, the C60 layer serves like an insulator in the dark, while electrons and holes are captured and released at the interface in response to the turn-over of spontaneous polarization of ferroelectric layer. On the other hand, under white light illumination, C60 layer serves like a conductor due to the increase of photogenerated mobile carriers, and these carriers dominate the carrier motions therein. Our findings here will be helpful for analyzing carrier behaviors in organic electronic devices using ferroelectric polymers.
-
International Nuclear Information System (INIS)
Cui, Xiaojin; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa
2013-01-01
By using displacement current measurement (DCM) and electric-field-induced optical second-harmonic generation (EFISHG) measurement, we studied the carrier behavior in the indium-tin oxide (ITO)/Poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))/C60/Au(or Al) capacitors. Two DCM peaks appeared asymmetrically at around −35.5 V and +30.0 V in the dark. Correspondingly, the EFISHG response from the C60 layer was observed, but the peak positions were different with respect to DCM ones. The results show that the spontaneous polarization of the ferroelectric P(VDF-TrFE) polymeric layer directly affects the electric field in the C60 layer, and thus governs the carrier motion in this layer. As a result, the C60 layer serves like an insulator in the dark, while electrons and holes are captured and released at the interface in response to the turn-over of spontaneous polarization of ferroelectric layer. On the other hand, under white light illumination, C60 layer serves like a conductor due to the increase of photogenerated mobile carriers, and these carriers dominate the carrier motions therein. Our findings here will be helpful for analyzing carrier behaviors in organic electronic devices using ferroelectric polymers
-
Energy Technology Data Exchange (ETDEWEB)
Rashidian, Zeinab; Rezaeipour, Saeid [Department of Physics, Faculty of Science, Lorestan University, Lorestan (Iran, Islamic Republic of); Hajati, Yaser [Department of Physics, Faculty of Science, Shahid Chamran University of Ahvaz, Ahvaz (Iran, Islamic Republic of); Lorestaniweiss, Zeinab, E-mail: rashidian1983z@gmail.com [Department of Physics, Faculty of Science, Lorestan University, Lorestan (Iran, Islamic Republic of); Ueda, Akiko [Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba (Japan)
2017-02-15
In this work, we study the transport properties of Dirac fermions through the ferromagnetic silicene which is sandwiched between the Graphene leads (G/FS/G). Spin/valley conductance, spin/valley polarization, and also Fano factor are theoretically calculated using the Landauer-Buttiker formula. We find that the fully valley and spin polarized currents through the G/FS/G junction can be obtained by increasing the electric field strength and the length of ferromagnetic silicene region. Moreover, the valley polarization can be tuned from negative to positive values by changing the electric field. We find that the Fano factor also changes with the spin and valley polarization. Our findings of high controllability of the spin and valley transport in such a G/FS/G junction the potential of this junction for spin-valleytronics applications.
-
Directory of Open Access Journals (Sweden)
M. Schiattarella
2000-06-01
Full Text Available We present the results of a geophysical survey carried out to outline the structural modelling of Quaternary slopedeposits in the northern part of the Agri high valley (Basilicata, Southern Italy. Quaternary folding and brittle deformations of the subaerial slope deposits have been studied combining electrical imaging and self-potential surveys with geological structural analysis. This integrated approach indicates that the area underwent both transpressional and transtensional tectonics during Pleistocene times as testified by the existence of a push up structure in the basement buried by deformed Quaternary breccias. On this basis, the valley appears to be a more complex structure than a simple extensional graben, as traditionally assumed in the literature.
-
International Nuclear Information System (INIS)
Fujita, Takaya; Matsumura, Koji; Itoh, Hiroshi; Fujita, Daisuke
2014-01-01
Scanning capacitance microscopy (SCM) is based on a contact-mode variant of atomic force microscopy, which is used for imaging two-dimensional carrier (electrons and holes) distributions in semiconductor devices. We introduced a method of quantification of the carrier concentration by experimentally deduced calibration curves, which were prepared for semiconductor materials such as silicon and silicon carbide. The analytical procedure was circulated to research organizations in a round-robin test. The effectiveness of the method was confirmed for practical analysis and for what is expected for industrial pre-standardization from the viewpoint of comparability among users. It was also applied to other electric scanning probe microscopy techniques such as scanning spreading resistance microscopy and scanning nonlinear dielectric microscopy. Their depth profiles of carrier concentration were found to be in good agreement with those characterized by SCM. These results suggest that our proposed method will be compatible with future next-generation microscopy. (paper)
-
Terahertz optical-Hall effect for multiple valley band materials: n-type silicon
International Nuclear Information System (INIS)
Kuehne, P.; Hofmann, T.; Herzinger, C.M.; Schubert, M.
2011-01-01
The optical-Hall effect comprises generalized ellipsometry at long wavelengths on samples with free-charge carriers placed within external magnetic fields. Measurement of the anisotropic magneto-optic response allows for the determination of the free-charge carrier properties including spatial anisotropy. In this work we employ the optical-Hall effect at terahertz frequencies for analysis of free-charge carrier properties in multiple valley band materials, for which the optical free-charge carrier contributions originate from multiple Brillouin-zone conduction or valence band minima or maxima, respectively. We investigate exemplarily the room temperature optical-Hall effect in low phosphorous-doped n-type silicon where free electrons are located in six equivalent conduction-band minima near the X-point. We simultaneously determine their free-charge carrier concentration, mobility, and longitudinal and transverse effective mass parameters.
-
Directory of Open Access Journals (Sweden)
Yulong Li
2015-11-01
Full Text Available For filled skutterudites, element Yb is one of the most common and important fillers. However, the optimal carrier concentration range in Y bxCo4Sb12 filled skutterudites has not been determined as a result of the low Yb filling fraction limit. In this study, a non-equilibrium fabrication process (MS-SPS process, consisting of a melt-spinning method and a spark plasma sintering technique, has been applied to prepare Y bxCo4Sb12 samples. The Yb filling fraction is successfully extended to 0.35, which provides the possibility to clarify the optimal carrier concentration range for Yb-filled skutterudites. High carrier concentrations, with a maximum of around 1 × 1021 cm−3, were achieved in the MS-SPS Y bxCo4Sb12 samples due to the significantly enhanced Yb filling fractions. The phase compositions, lattice parameters, electrical and thermal transport properties of the MS-SPS Y bxCo4Sb12 samples with high carrier concentrations were systematically investigated. An optimal carrier concentration range of around 5 ∼ 6 × 1020 cm−3, corresponding to the actual Yb filling fraction of around 0.21∼0.26, has been determined, which displays the highest thermoelectric performance in Y bxCo4Sb12 thermoelectric materials.
-
International Nuclear Information System (INIS)
Inomata, Kunihiro; Kawae, Takeshi; Kim, Sang-Jae; Nakajima, Kensuke; Yamashita, Tsutomu; Sato, Shigeo; Nakajima, Koji; Hatano, Takeshi
2003-01-01
The control of the critical current density (J c ) and the junction resistance (R N ) along the c-axis of intrinsic Josephson junctions (IJJs) on a high-T c superconductor is very important for applying the IJJs to electronic devices. For controlling these junction parameters, we have clarified the relationship of J c , R N and the carrier density in Bi 2 Sr 2 CaCu 2 O 8+δ whiskers by changing the carrier density with an annealing process. We determined the electrical transport characteristics of the IJJs. As a result, the J c increased, and the R N decreased systematically when the carrier density increased. The values of J c and R N could be controlled by a change in the carrier density
-
Meisel, K.D.; Pasveer, W.F.; Cottaar, J.; Tanase, C.; Coehoorn, R.; Bobbert, P.A.; Blom, P.W.M.; Leeuw, de D.M.; Michels, M.A.J.
2006-01-01
We model charge transport in disordered semiconducting polymers by hopping of charge carriers on a square lattice of sites with Gaussian on-site energy disorder, using Fermi-Dirac statistics. From numerically exact solns. of the Master equation, we study the dependence of the charge-carrier mobility
-
Energy Technology Data Exchange (ETDEWEB)
Giano, S I; Schiattarella, M [Basilicata Univ., Potenza (Italy). Centro di Geodinamica; Lapenna, V; Piscitelli, S [Consiglio Nazionale delle Ricerche, Tito, PZ (Italy). Ist. di Metodologie Avanzate di Analisi Ambientale
2000-04-01
The paper presents the results of a geophysical survey carried out to outline the structural modelling of quarternary slope deposits in the northern part of Agri high valley (Basilicata region, Italy). Quaternary folding and brittle deformations of the subaerial slope deposits have been studied combining electrical imaging and self-potential surveys with geological structural analysis. This integrated approach indicates that the area underwent both transpressional and transtensional tectonics during Pleistocene times as testified by the existence of a push up structure in the basement buried by deformed Quaternary breccias. On this basis, the valley appears to be a more complex structure than a simple extensional graben, as traditionally assumed in the literature.
-
Mobility of charge carriers in porous silicon layers
International Nuclear Information System (INIS)
Forsh, P. A.; Martyshov, M. N.; Latysheva, A. P.; Vorontsov, A. S.; Timoshenko, V. Yu.; Kashkarov, P. K.
2008-01-01
The (conduction) mobility of majority charge carriers in porous silicon layers of the n and p types is estimated by joint measurements of electrical conductivity and free charge carrier concentration, which is determined from IR absorption spectra. Adsorption of donor and acceptor molecules leading to a change in local electric fields in the structure is used to identify the processes controlling the mobility in porous silicon. It is found that adsorption of acceptor and donor molecules at porous silicon of the p and n types, respectively, leads to a strong increase in electrical conductivity, which is associated with an increase in the concentration of free carrier as well as in their mobility. The increase in the mobility of charge carriers as a result of adsorption indicates the key role of potential barriers at the boundaries of silicon nanocrystals and may be due to a decrease in the barrier height as a result of adsorption
-
International Nuclear Information System (INIS)
Yang Jing; Zhao De-Gang; Jiang De-Sheng; Liu Zong-Shun; Chen Ping; Li Liang; Wu Liang-Liang; Le Ling-Cong; Li Xiao-Jing; He Xiao-Guang; Yang Hui; Wang Hui; Zhu Jian-Jun; Zhang Shu-Ming; Zhang Bao-Shun
2013-01-01
The effects of Mg-induced net acceptor doping concentration and carrier lifetime on the performance of a p—i—n InGaN solar cell are investigated. It is found that the electric field induced by spontaneous and piezoelectric polarization in the i-region could be totally shielded when the Mg-induced net acceptor doping concentration is sufficiently high. The polarization-induced potential barriers are reduced and the short circuit current density is remarkably increased from 0.21 mA/cm 2 to 0.95 mA/cm 2 by elevating the Mg doping concentration. The carrier lifetime determined by defect density of i-InGaN also plays an important role in determining the photovoltaic properties of solar cell. The short circuit current density severely degrades, and the performance of InGaN solar cell becomes more sensitive to the polarization when carrier lifetime is lower than the transit time. This study demonstrates that the crystal quality of InGaN absorption layer is one of the most important challenges in realizing high efficiency InGaN solar cells. (interdisciplinary physics and related areas of science and technology)
-
Electric conductivity of TlInTe2 monocrystal in strong electric fields
International Nuclear Information System (INIS)
Zarbaliev, M.M.; Godzhaev, Eh.M.; Gadzhiev, V.A.
1980-01-01
Electric condUctivity of the TlInTe 2 single crystal in strong electric fields has been studied in the range of 77-300 K. The electron part of the TlInTe 2 dielectric constant has been found to be 4. The dependence of the activation energy of current carriers on the electric field strength is constructed and the value of the activation energy of current carriers in the absence of an electric field is determined by the extrapolation method. The results of the experiments are in good agreement with the Frenkel-Pool theory, and this affords grounds for asserting that the obtained dependences of electric conductivity on temperature and the electric field strength are defined by variation in the current carrier concentration due to action of the thermal-electron ionization mechanism
-
Fujii, Mami N; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei
2015-12-18
The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.
-
M. Schiattarella; S. Piscitelli; V. Lapenna; S. I. Giano
2000-01-01
We present the results of a geophysical survey carried out to outline the structural modelling of Quaternary slopedeposits in the northern part of the Agri high valley (Basilicata, Southern Italy). Quaternary folding and brittle deformations of the subaerial slope deposits have been studied combining electrical imaging and self-potential surveys with geological structural analysis. This integrated approach indicates that the area underwent both transpressional and transtensional tectonics dur...
-
78 FR 60375 - Rogue Valley Terminal Railroad Corporation-Corporate Family Transaction Exemption
2013-10-01
... approximately 14 miles of rail line located in the Medford Industrial Park in White City, Or., where it connects... corporate affiliate, Medford Industrial Trainline Management LLC (Medford), to which Rogue Valley will... changes, or changes in the competitive balance with carriers outside the corporate family. Under 49 U.S.C...
-
Conduction-band valley spin splitting in single-layer H-T l2O
Ma, Yandong; Kou, Liangzhi; Du, Aijun; Huang, Baibiao; Dai, Ying; Heine, Thomas
2018-02-01
Despite numerous studies, coupled spin and valley physics is currently limited to two-dimensional (2D) transition-metal dichalcogenides (TMDCs). Here, we predict an exceptional 2D valleytronic material associated with the spin-valley coupling phenomena beyond 2D TMDCs—single-layer (SL) H-T l2O . It displays large valley spin splitting (VSS), significantly larger than that of 2D TMDCs, and a finite band gap, which are both critically attractive for the integration of valleytronics and spintronics. More importantly, in sharp contrast to all the experimentally confirmed 2D valleytronic materials, where the strong valence-band VSS (0.15-0.46 eV) supports the spin-valley coupling, the VSS in SL H-T l2O is pronounced in its conduction band (0.61 eV), but negligibly small in its valence band (21 meV), thus opening a way for manipulating the coupled spin and valley physics. Moreover, SL H-T l2O possesses extremely high carrier mobility, as large as 9.8 ×103c m2V-1s-1 .
-
Prarokijjak, Worasak; Soodchomshom, Bumned
2018-04-01
Spin-valley transport and magnetoresistance are investigated in silicene-based N/TB/N/TB/N junction where N and TB are normal silicene and topological barriers. The topological phase transitions in TB's are controlled by electric, exchange fields and circularly polarized light. As a result, we find that by applying electric and exchange fields, four groups of spin-valley currents are perfectly filtered, directly induced by topological phase transitions. Control of currents, carried by single, double and triple channels of spin-valley electrons in silicene junction, may be achievable by adjusting magnitudes of electric, exchange fields and circularly polarized light. We may identify that the key factor behind the spin-valley current filtered at the transition points may be due to zero and non-zero Chern numbers. Electrons that are allowed to transport at the transition points must obey zero-Chern number which is equivalent to zero mass and zero-Berry's curvature, while electrons with non-zero Chern number are perfectly suppressed. Very large magnetoresistance dips are found directly induced by topological phase transition points. Our study also discusses the effect of spin-valley dependent Hall conductivity at the transition points on ballistic transport and reveals the potential of silicene as a topological material for spin-valleytronics.
-
Many-body effects in valleytronics: direct measurement of valley lifetimes in single-layer MoS2.
Mai, Cong; Barrette, Andrew; Yu, Yifei; Semenov, Yuriy G; Kim, Ki Wook; Cao, Linyou; Gundogdu, Kenan
2014-01-08
Single layer MoS2 is an ideal material for the emerging field of "valleytronics" in which charge carrier momentum can be finely controlled by optical excitation. This system is also known to exhibit strong many-body interactions as observed by tightly bound excitons and trions. Here we report direct measurements of valley relaxation dynamics in single layer MoS2, by using ultrafast transient absorption spectroscopy. Our results show that strong Coulomb interactions significantly impact valley population dynamics. Initial excitation by circularly polarized light creates electron-hole pairs within the K-valley. These excitons coherently couple to dark intervalley excitonic states, which facilitate fast electron valley depolarization. Hole valley relaxation is delayed up to about 10 ps due to nondegeneracy of the valence band spin states. Intervalley biexciton formation reveals the hole valley relaxation dynamics. We observe that biexcitons form with more than an order of magnitude larger binding energy compared to conventional semiconductors. These measurements provide significant insight into valley specific processes in 2D semiconductors. Hence they could be used to suggest routes to design semiconducting materials that enable control of valley polarization.
-
BPA/Lower Valley transmission project. Final environmental impact statement
International Nuclear Information System (INIS)
1998-06-01
Bonneville Power Administration and Lower Valley Power and Light, Inc. propose to solve a voltage stability problem in the Jackson and Afton, Wyoming areas. Lower Valley buys electricity from BPA and then supplies it to the residences and businesses of the Jackson and Afton, Wyoming areas. BPA is considering five alternatives. For the Agency Proposed Action, BPA and Lower Valley would construct a new 115-kV line from BPA's Swan Valley Substation near Swan Valley in Bonneville County, Idaho about 58 km (36 miles) east to BPA's Teton Substation near Jackson in Teton County, Wyoming. The new line would be next to an existing 115-kV line. The Single-Circuit Line Alternative has all the components of the Agency Proposed Action except that the entire line would be supported by single-circuit wood pole H-frame structures. the Short Line Alternative has all the components of the Single-Circuit Line Alternative except it would only be half as long. BPA would also construct a new switching station near the existing right-of-way, west or north of Targhee Tap. Targhee Tap would then be removed. For the Static Var Compensation Alternative, BPA would install a Static Var Compensator (SVC) at Teton or Jackson Substation. An SVC is a group of electrical equipment placed at a substation to help control voltage on a transmission system. The No Action Alternative assumes that no new transmission line is built, and no other equipment is added to the transmission system
-
Xu, Lei; Yang, Ming; Shen, Lei; Zhou, Jun; Zhu, Tao; Feng, Yuan Ping
2018-01-01
Lifting the valley degeneracy is an efficient way to achieve valley polarization for further valleytronics operations. In this Rapid Communication, we demonstrate that a large valley splitting can be obtained in monolayer transition metal dichalcogenides by magnetic proximity coupling to an insulating antiferromagnetic substrate. As an example, we perform first-principles calculations to investigate the electronic structures of monolayer WS2 on the MnO(111) surface. Our calculation results suggest that a large valley splitting of 214 meV, which corresponds to a Zeeman magnetic field of 1516 T, is induced in the valence band of monolayer WS2. The magnitude of valley splitting relies on the strength of interfacial orbital hybridization and can be tuned continually by applying an external out-of-plane pressure and in-plane strain. More interestingly, we find that both spin and valley index will flip when the magnetic ordering of MnO is reversed. Besides, owing to the sizable Berry curvature and time-reversal symmetry breaking in the WS2/MnO heterostructure, a spin- and valley-polarized anomalous Hall current can be generated in the presence of an in-plane electric field, which allows one to detect valleys by the electrical approach. Our results shed light on the realization of valleytronic devices using the antiferromagnetic insulator as the substrate.
-
Recovery Act:Rural Cooperative Geothermal development Electric & Agriculture
Energy Technology Data Exchange (ETDEWEB)
Culp, Elzie Lynn [Surprise Valley Electrification Corp., Alturas, CA (United States)
2016-01-12
Surprise Valley Electric, a small rural electric cooperative serving northeast California and southern Oregon, developed a 3mw binary geothermal electric generating plant on a cooperative member's ranch. The geothermal resource had been discovered in 1980 when the ranch was developing supplemental irrigation water wells. The 240°F resource was used for irrigation until developed through this project for generation of electricity. A portion of the spent geothermal fluid is now used for irrigation in season and is available for other purposes, such as greenhouse agriculture, aquaculture and direct heating of community buildings. Surprise Valley Electric describes many of the challenges a small rural electric cooperative encountered and managed to develop a geothermal generating plant.
-
Silicon nanowire hot carrier electroluminescence
Energy Technology Data Exchange (ETDEWEB)
Plessis, M. du, E-mail: monuko@up.ac.za; Joubert, T.-H.
2016-08-31
Avalanche electroluminescence from silicon pn junctions has been known for many years. However, the internal quantum efficiencies of these devices are quite low due to the indirect band gap nature of the semiconductor material. In this study we have used reach-through biasing and SOI (silicon-on-insulator) thin film structures to improve the internal power efficiency and the external light extraction efficiency. Both continuous silicon thin film pn junctions and parallel nanowire pn junctions were manufactured using a custom SOI technology. The pn junctions are operated in the reach-through mode of operation, thus increasing the average electric field within the fully depleted region. Experimental results of the emission spectrum indicate that the most dominant photon generating mechanism is due to intraband hot carrier relaxation processes. It was found that the SOI nanowire light source external power efficiency is at least an order of magnitude better than the comparable bulk CMOS (Complementary Metal Oxide Semiconductor) light source. - Highlights: • We investigate effect of electric field on silicon avalanche electroluminescence. • With reach-through pn junctions the current and carrier densities are kept constant. • Higher electric fields increase short wavelength radiation. • Higher electric fields decrease long wavelength radiation. • The effect of the electric field indicates intraband transitions as main mechanism.
-
Photo-induced spin and valley-dependent Seebeck effect in the low-buckled Dirac materials
Mohammadi, Yawar
2018-04-01
Employing the Landauer-Buttiker formula we investigate the spin and valley dependence of Seebeck effect in low-buckled Dirac materials (LBDMs), whose band structure are modulated by local application of a gate voltage and off-resonant circularly polarized light. We calculate the charge, spin and valley Seebeck coefficients of an irradiated LBDM as functions of electronic doping, light intensity and the amount of the electric field in the linear regime. Our calculation reveal that all Seebeck coefficients always shows an odd features with respect to the chemical potential. Moreover, we show that, due to the strong spin-orbit coupling in the LBDMs, the induced thermovoltage in the irradiated LBDMs is spin polarized, and can also become valley polarized if the gate voltage is applied too. It is also found that the valley (spin) polarization of the induced thermovoltage could be inverted by reversing the circular polarization of light or reversing the direction the electric field (only by reversing the circular polarization of light).
-
Size effects in many-valley fluctuations in semiconductors
International Nuclear Information System (INIS)
Sokolov, V.N.; Kochelap, V.A.
1995-08-01
We present the results of theoretical investigations of nonhomogeneous fluctuations in submicron active regions of many-valley semiconductors with equivalent valleys(Ge, Si-type), where the dimension 2d of the region is comparable to or less than the intervalley diffusion relaxation length L iv . It is shown that for arbitrary orientations of the valley axes (the crystal axes) with respect to lateral sample surfaces, the fluctuation spectra depend on the bias voltage applied to the layer in the region of weak nonheating electric fields. The new physical phenomenon is reported: the fluctuation spectra depend on the sample thickness, with 2d iv the suppression of fluctuations arises for fluctuation frequencies ω -1 iv , τ -1 iv is the characteristic intervalley relaxation time. (author). 43 refs, 5 figs
-
International Nuclear Information System (INIS)
Feng, Shih-Wei; Liao, Po-Hsun; Leung, Benjamin; Han, Jung; Yang, Fann-Wei; Wang, Hsiang-Chen
2015-01-01
Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantages of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED
-
Energy Technology Data Exchange (ETDEWEB)
Feng, Shih-Wei, E-mail: swfeng@nuk.edu.tw; Liao, Po-Hsun [Department of Applied Physics, National University of Kaohsiung, No. 700, Kaohsiung University Rd., Nan Tzu Dist., 811 Kaohsiung, Taiwan (China); Leung, Benjamin; Han, Jung [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States); Yang, Fann-Wei [Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan, Taiwan (China); Wang, Hsiang-Chen [Graduate Institute of Opto-Mechatronics and Advanced Institute of Manufacturing with High-Tech Innovations (AIM-HI), National Chung Cheng University, Chia-Yi, Taiwan (China)
2015-07-28
Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantages of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED.
-
Hot-carrier effects on irradiated deep submicron NMOSFET
International Nuclear Information System (INIS)
Cui Jiangwei; Zheng Qiwen; Yu Xuefeng; Cong Zhongchao; Zhou Hang; Guo Qi; Wen Lin; Wei Ying; Ren Diyuan
2014-01-01
We investigate how γ exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation, especially for narrow channel device. The reason is attributed to charge traps in STI, which then induce different electric field and impact ionization rates during hot-carrier stress. (semiconductor devices)
-
Kumar, Nitesh; Shekhar, Chandra; Klotz, J.; Wosnitza, J.; Felser, Claudia
2017-10-01
LaBi is a three-dimensional rocksalt-type material with a surprisingly quasi-two-dimensional electronic structure. It exhibits excellent electronic properties such as the existence of nontrivial Dirac cones, extremely large magnetoresistance, and high charge-carrier mobility. The cigar-shaped electron valleys make the charge transport highly anisotropic when the magnetic field is varied from one crystallographic axis to another. We show that the electrons can be polarized effectively in these electron valleys under a rotating magnetic field. We achieved a polarization of 60% at 2 K despite the coexistence of three-dimensional hole pockets. The valley polarization in LaBi is compared to the sister compound LaSb where it is found to be smaller. The performance of LaBi is comparable to the highly efficient bismuth.
-
Carrier frequency offset estimation for an acoustic-electric channel using 16 QAM modulation
Cunningham, Michael T.; Anderson, Leonard A.; Wilt, Kyle R.; Chakraborty, Soumya; Saulnier, Gary J.; Scarton, Henry A.
2016-05-01
Acoustic-electric channels can be used to send data through metallic barriers, enabling communications where electromagnetic signals are ineffective. This paper considers an acoustic-electric channel that is formed by mounting piezoelectric transducers on metallic barriers that are separated by a thin water layer. The transducers are coupled to the barriers using epoxy and the barriers are positioned to axially-align the PZTs, maximizing energy transfer efficiency. The electrical signals are converted by the transmitting transducers into acoustic waves, which propagate through the elastic walls and water medium to the receiving transducers. The reverberation of the acoustic signals in these channels can produce multipath distortion with a significant delay spread that introduces inter-symbol interference (ISI) into the received signal. While the multipath effects can be severe, the channel does not change rapidly which makes equalization easier. Here we implement a 16-QAM system on this channel, including a method for obtaining accurate carrier frequency offset (CFO) estimates in the presence of the quasi-static multipath propagation. A raised-power approach is considered but found to suffer from excessive data noise resulting from the ISI. An alternative approach that utilizes a pilot tone burst at the start of a data packet is used for CFO estimation and found to be effective. The autocorrelation method is used to estimate the frequency of the received burst. A real-time prototype of the 16 QAM system that uses a Texas Instruments MSP430 microcontroller-based transmitter and a personal computer-based receiver is presented along with performance results.
-
Terahertz radiation from accelerating charge carriers in graphene under ultrafast photoexcitation
Rustagi, Avinash; Stanton, C. J.
2016-11-01
We study the generation of terahertz (THz) radiation from the acceleration of ultrafast photoexcited charge carriers in graphene in the presence of a dc electric field. Our model is based on calculating the transient current density from the time-dependent distribution function which is determined using the Boltzmann transport equation (BTE) within a relaxation time approximation. We include the time-dependent generation of carriers by the pump pulse by solving for the carrier generation rate using the optical Bloch equations in the rotating wave approximation (RWA). The linearly polarized pump pulse generates an anisotropic distribution of photoexcited carriers in the kx-ky plane. The collision integral in the Boltzmann equation includes a term that leads to the thermalization of carriers via carrier-carrier scattering to an effective temperature above the lattice temperature, as well as a cooling term, which leads to energy relaxation via inelastic carrier-phonon scattering. The radiated signal is proportional to the time derivative of the transient current density. In spite of the fact that the magnitude of the velocity is the same for all the carriers in graphene, there is still emitted radiation from the photoexcited charge carriers with frequency components in the THz range due to a change in the direction of velocity of the photoexcited carriers in the external electric field as well as cooling of the photoexcited carriers on a subpicosecond time scale.
-
Komori, S.; Kakeya, I.
2018-06-01
Doping evolution of the unconventional superconducting properties in BaBiO3-based compounds has yet to be clarified in detail due to the significant change of the oxygen concentration accompanied by the chemical substitution. We suggest that the carrier concentration of an unconventional superconductor, BaPb0.7Bi0.3O3‑δ , is controllable without inducing chemical or structural changes using an electric double-layer transistor structure. The critical temperature is found to decrease systematically with increasing carrier concentration.
-
Hoopa Valley Small Scale Hydroelectric Feasibility Project
Energy Technology Data Exchange (ETDEWEB)
Curtis Miller
2009-03-22
This study considered assessing the feasibility of developing small scale hydro-electric power from seven major tributaries within the Hoopa Valley Indian Reservation of Northern California (http://www.hoopa-nsn.gov/). This study pursued the assessment of seven major tributaries of the Reservation that flow into the Trinity River. The feasibility of hydropower on the Hoopa Valley Indian Reservation has real potential for development and many alternative options for project locations, designs, operations and financing. In order to realize this opportunity further will require at least 2-3 years of intense data collection focusing on stream flow measurements at multiple locations in order to quantify real power potential. This also includes on the ground stream gradient surveys, road access planning and grid connectivity to PG&E for sale of electricity. Imperative to this effort is the need for negotiations between the Hoopa Tribal Council and PG&E to take place in order to finalize the power rate the Tribe will receive through any wholesale agreement that utilizes the alternative energy generated on the Reservation.
-
Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system
Energy Technology Data Exchange (ETDEWEB)
Kobayashi, T., E-mail: t.kobayashi@unsw.edu.au; Heijden, J. van der; House, M. G.; Hile, S. J.; Asshoff, P.; Simmons, M. Y.; Rogge, S. [Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney 2052 New South Wales (Australia); Gonzalez-Zalba, M. F. [Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Vinet, M. [Université Grenoble-Alpes and CEA, LETI, MINATEC, 38000 Grenoble (France)
2016-04-11
We report on electronic transport measurements through a silicon double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO{sub 2} interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley splitting in the quantum dot, which is controllable between 160 and 240 μeV with an electric field dependence 1.2 ± 0.2 meV/(MV/m). A large valley splitting is an essential requirement for implementing a physical electron spin qubit in a silicon quantum dot.
-
Solar Energy within the Central Valley, CA: Current Practices and Potential
Hoffacker, M. K.; Hernandez, R. R.; Allen, M. F.
2015-12-01
Utility-scale solar energy (USSE, ≥ 1 megawatt [MW]) systems are rapidly being deployed in the Central Valley of California, generating clean electricity and new job opportunities. Utility-scale solar energy systems require substantial quantities of land or space, often prompting an evaluation of environmental impacts and trade-offs when selecting their placement. Utilizing salt-contaminated agricultural land (as the sodium absorption and electrical conductivity values are unsuitably high), unsuitable for food production, and lands within the built environment (developed), can serve as a co-benefit opportunity when reclamation of these lands for USSE development is prioritized. In this study, we quantify the theoretical and generation-based solar energy potential for the Central Valley according to land-cover type, crop type, and for salt-contaminated lands. Further, we utilize the Carnegie Energy and Environmental Compatibility (CEEC) model to identify and prioritize solar energy, integrating environmental resource opportunities and constraints most relevant to the Central Valley. We use the CEEC model to generate a value-based environmental compatibility output for the Central Valley. The Central Valley extends across nearly 60,000 km2 of California with the potential of generating 21,800 - 30,300 TWh y-1 and 41,600 TWh y-1 of solar energy for photovoltaic (PV) and concentrating solar power (CSP), respectively. Pasture, hay, and cultivated crops comprise over half of the Central Valley, much of which is considered prime agriculture or of statewide or local importance for farming (28,200 km2). Together, approximately one-third of this region is salt-contaminated (16%) or developed (11%). This confers a generation-based potential of 5713 - 7891 TWh y-1 and 2770 TWh y-1 for PV and CSP, respectively. As energy, food, and land are inextricably linked, our study shows how land favorable for renewable energy systems can be used more effectively in places where land is
-
Holstein polaron in a valley-degenerate two-dimensional semiconductor.
Kang, Mingu; Jung, Sung Won; Shin, Woo Jong; Sohn, Yeongsup; Ryu, Sae Hee; Kim, Timur K; Hoesch, Moritz; Kim, Keun Su
2018-05-28
Two-dimensional (2D) crystals have emerged as a class of materials with tunable carrier density 1 . Carrier doping to 2D semiconductors can be used to modulate many-body interactions 2 and to explore novel composite particles. The Holstein polaron is a small composite particle of an electron that carries a cloud of self-induced lattice deformation (or phonons) 3-5 , which has been proposed to play a key role in high-temperature superconductivity 6 and carrier mobility in devices 7 . Here we report the discovery of Holstein polarons in a surface-doped layered semiconductor, MoS 2 , in which a puzzling 2D superconducting dome with the critical temperature of 12 K was found recently 8-11 . Using a high-resolution band mapping of charge carriers, we found strong band renormalizations collectively identified as a hitherto unobserved spectral function of Holstein polarons 12-18 . The short-range nature of electron-phonon (e-ph) coupling in MoS 2 can be explained by its valley degeneracy, which enables strong intervalley coupling mediated by acoustic phonons. The coupling strength is found to increase gradually along the superconducting dome up to the intermediate regime, which suggests a bipolaronic pairing in the 2D superconductivity.
-
Electric Vehicles - Promoting Fuel Efficiency and Renewable Energy in Danish Transport
DEFF Research Database (Denmark)
Jørgensen, Kaj
1997-01-01
Analysis of electric vehicles as energy carrier for renewable energy and fossil fuels, including comparisons with other energy carriers (hydrogen, bio-fuels)......Analysis of electric vehicles as energy carrier for renewable energy and fossil fuels, including comparisons with other energy carriers (hydrogen, bio-fuels)...
-
Niteesh Reddy, Varra; Reddy, M. Siva Pratap; Gunasekhar, K. R.; Lee, Jung-Hee
2018-04-01
This work explores the temperature-dependent electrical characteristics and carrier transport mechanism of Au/p-Cu2ZnSnS4/n-type GaN heterojunction (HJ) diodes with a CZTS interlayer. The electrical characteristics were examined by current-voltage-temperature, turn-on voltage-temperature and series resistance-temperature in the high-temperature range of 300-420 K. It is observed that an exponential decrease in the series resistance ( R S) and increase in the ideality factor ( n) and barrier height ( ϕ b) with increase in temperature. The thermal coefficient ( K j) is determined to be - 1.3 mV K-1 at ≥ 300 K. The effective ϕ b is determined to be 1.21 eV. This obtained barrier height is consistent with the theoretical one. The characteristic temperature ( T 0) resulting from the Cheung's functions [d V/d(ln I) vs. I and H( I) vs. I], is seen that there is good agreement between the T 0 values from both Cheung's functions. The relevant carrier transport mechanisms of Au/p-CZTS/n-type GaN HJ are explained based on the thermally decreased energy band gap of n-type GaN layers, thermally activated deep donors and increased further activated shallow donors.
-
Photoinduced quantum spin and valley Hall effects, and orbital magnetization in monolayer MoS2
Tahir, M.
2014-09-22
We theoretically demonstrate that 100% valley-polarized transport in monolayers of MoS2 and other group-VI dichalcogenides can be obtained using off-resonant circularly polarized light. By tuning the intensity of the off-resonant light the intrinsic band gap in one valley is reduced, while it is enhanced in the other valley, enabling single valley quantum transport. As a consequence, we predict (i) enhancement of the longitudinal electrical conductivity, accompanied by an increase in the spin polarization of the flowing electrons, (ii) enhancement of the intrinsic spin Hall effect, together with a reduction of the intrinsic valley Hall effect, and (iii) enhancement of the orbital magnetic moment and orbital magnetization. These mechanisms provide appealing opportunities to the design of nanoelectronics based on dichalcogenides.
-
Photoinduced quantum spin and valley Hall effects, and orbital magnetization in monolayer MoS2
Tahir, M.; Manchon, Aurelien; Schwingenschlö gl, Udo
2014-01-01
We theoretically demonstrate that 100% valley-polarized transport in monolayers of MoS2 and other group-VI dichalcogenides can be obtained using off-resonant circularly polarized light. By tuning the intensity of the off-resonant light the intrinsic band gap in one valley is reduced, while it is enhanced in the other valley, enabling single valley quantum transport. As a consequence, we predict (i) enhancement of the longitudinal electrical conductivity, accompanied by an increase in the spin polarization of the flowing electrons, (ii) enhancement of the intrinsic spin Hall effect, together with a reduction of the intrinsic valley Hall effect, and (iii) enhancement of the orbital magnetic moment and orbital magnetization. These mechanisms provide appealing opportunities to the design of nanoelectronics based on dichalcogenides.
-
Carrier Dynamics Analysis in Metal-SemiconductorMetal Device for mid-IR Silicon Photonics
DEFF Research Database (Denmark)
Hui, Alvin Tak Lok; Ding, Yunhong; Hu, Hao
A modelling platform for active carrier removal based on metal-semiconductor-metal structure is reported on analysis of carrier dynamics. The analysis reveals electric current hot spots exist in geometric singularities and curly trajectory of carriers should be considered when accurately estimati...
-
Carrier dynamics analysis in metal-semiconductor-metal device for mid-IR silicon photonics
DEFF Research Database (Denmark)
Hui, Alvin Tak Lok; Ding, Yunhong; Hu, Hao
2017-01-01
A modelling platform for active carrier removal based on metal-semiconductor-metal structure is reported on analysis of carrier dynamics. The analysis reveals electric current hot spots exist in geometric singularities and curly trajectory of carriers should be considered when accurately estimati...
-
Large Spin-Valley Polarization in Monolayer MoTe2 on Top of EuO(111)
Zhang, Qingyun
2015-12-08
The electronic properties of monolayer MoTe2 on top of EuO(111) are studied by first-principles calculations. Strong spin polarization is induced in MoTe2, which results in a large valley polarization. In a longitudinal electric field this will result in a valley and spin-polarized charge Hall effect. The direction of the Hall current as well as the valley and spin polarizations can be tuned by an external magnetic field. Copyright © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
-
Mechanism of the free charge carrier generation in the dielectric breakdown
Rahim, N. A. A.; Ranom, R.; Zainuddin, H.
2017-12-01
Many studies have been conducted to investigate the effect of environmental, mechanical and electrical stresses on insulator. However, studies on physical process of discharge phenomenon, leading to the breakdown of the insulator surface are lacking and difficult to comprehend. Therefore, this paper analysed charge carrier generation mechanism that can cause free charge carrier generation, leading toward surface discharge development. Besides, this paper developed a model of surface discharge based on the charge generation mechanism on the outdoor insulator. Nernst’s Planck theory was used in order to model the behaviour of the charge carriers while Poisson’s equation was used to determine the distribution of electric field on insulator surface. In the modelling of surface discharge on the outdoor insulator, electric field dependent molecular ionization was used as the charge generation mechanism. A mathematical model of the surface discharge was solved using method of line technique (MOL). The result from the mathematical model showed that the behaviour of net space charge density was correlated with the electric field distribution.
-
Geothermal resource assessment of western San Luis Valley, Colorado
Energy Technology Data Exchange (ETDEWEB)
Zacharakis, Ted G.; Pearl, Richard Howard; Ringrose, Charles D.
1983-01-01
The Colorado Geological Survey initiated and carried out a fully integrated assessment program of the geothermal resource potential of the western San Luis Valley during 1979 and 1980. The San Luis Valley is a large intermontane basin located in southcentral Colorado. While thermal springs and wells are found throughout the Valley, the only thermal waters found along the western part of the Valley are found at Shaw Warm Springs which is a relatively unused spring located approximately 6 miles (9.66 km) north of Del Norte, Colorado. The waters at Shaws Warm Spring have a temperature of 86 F (30 C), a discharge of 40 gallons per minute and contain approximately 408 mg/l of total dissolved solids. The assessment program carried out din the western San Luis Valley consisted of: soil mercury geochemical surveys; geothermal gradient drilling; and dipole-dipole electrical resistivity traverses, Schlumberger soundings, Audio-magnetotelluric surveys, telluric surveys, and time-domain electro-magnetic soundings and seismic surveys. Shaw Warm Springs appears to be the only source of thermal waters along the western side of the Valley. From the various investigations conducted the springs appear to be fault controlled and is very limited in extent. Based on best evidence presently available estimates are presented on the size and extent of Shaw Warm Springs thermal system. It is estimated that this could have an areal extent of 0.63 sq. miles (1.62 sq. km) and contain 0.0148 Q's of heat energy.
-
Charge carrier relaxation model in disordered organic semiconductors
International Nuclear Information System (INIS)
Lu, Nianduan; Li, Ling; Sun, Pengxiao; Liu, Ming
2013-01-01
The relaxation phenomena of charge carrier in disordered organic semiconductors have been demonstrated and investigated theoretically. An analytical model describing the charge carrier relaxation is proposed based on the pure hopping transport theory. The relation between the material disorder, electric field and temperature and the relaxation phenomena has been discussed in detail, respectively. The calculated results reveal that the increase of electric field and temperature can promote the relaxation effect in disordered organic semiconductors, while the increase of material disorder will weaken the relaxation. The proposed model can explain well the stretched-exponential law by adopting the appropriate parameters. The calculation shows a good agreement with the experimental data for organic semiconductors
-
Hoi, Bui Dinh; Yarmohammadi, Mohsen; Kazzaz, Houshang Araghi
2017-10-01
We studied how the strain, induced exchange field and extrinsic Rashba spin-orbit coupling (RSOC) enhance the electronic band structure (EBS) and electronic heat capacity (EHC) of ferromagnetic silicene in presence of external electric field (EF) by using the Kane-Mele Hamiltonian, Dirac cone approximation and the Green's function approach. Particular attention is paid to investigate the EHC of spin-up and spin-down bands at Dirac K and K‧ points. We have varied the EF, strain, exchange field and RSOC to tune the energy of inter-band transitions and consequently EHC, leading to very promising features for future applications. Evaluation of EF exhibits three phases: Topological insulator (TI), valley-spin polarized metal (VSPM) and band insulator (BI) at given aforementioned parameters. As a new finding, we have found a quantum anomalous Hall phase in BI regime at strong RSOCs. Interestingly, the effective mass of carriers changes with strain, resulting in EHC behaviors. Here, exchange field has the same behavior with EF. Finally, we have confirmed the reported and expected symmetry results for both Dirac points and spins with the study of valley-dependent EHC.
-
Valley-dependent band structure and valley polarization in periodically modulated graphene
Lu, Wei-Tao
2016-08-01
The valley-dependent energy band and transport property of graphene under a periodic magnetic-strained field are studied, where the time-reversal symmetry is broken and the valley degeneracy is lifted. The considered superlattice is composed of two different barriers, providing more degrees of freedom for engineering the electronic structure. The electrons near the K and K' valleys are dominated by different effective superlattices. It is found that the energy bands for both valleys are symmetric with respect to ky=-(AM+ξ AS) /4 under the symmetric superlattices. More finite-energy Dirac points, more prominent collimation behavior, and new crossing points are found for K' valley. The degenerate miniband near the K valley splits into two subminibands and produces a new band gap under the asymmetric superlattices. The velocity for the K' valley is greatly renormalized compared with the K valley, and so we can achieve a finite velocity for the K valley while the velocity for the K' valley is zero. Especially, the miniband and band gap could be manipulated independently, leading to an increase of the conductance. The characteristics of the band structure are reflected in the transmission spectra. The Dirac points and the crossing points appear as pronounced peaks in transmission. A remarkable valley polarization is obtained which is robust to the disorder and can be controlled by the strain, the period, and the voltage.
-
Biswas, Swarup; Dutta, Bula; Bhattacharya, Subhratanu
2014-02-01
The electrical conductivity relaxation in moderately doped polypyrrole and its nanocomposites reinforced with different proportion of silver nanoparticles was investigated in both frequency and time domain. An analytical distribution function of relaxation times is constructed from the results obtained in the frequency domain formalism and is used to evaluate the Kohlrausch-Williams-Watts (KWW) type decay function in the time domain. The thermal evolution of different relaxation parameters was analyzed. The temperature-dependent dc electrical conductivity, estimated from the average conductivity relaxation time is observed to depend strongly on the nanoparticle loading and follows Mott three-dimensional variable range hopping (VRH) conduction mechanism. The extent of charge carrier localization calculated from the VRH mechanism is well correlated to the evidences obtained from the structural characterizations of different nanostructured samples.
-
International Nuclear Information System (INIS)
Tsai, Ming-Yen; Chang, Ting-Chang; Chu, Ann-Kuo; Chen, Te-Chih; Hsieh, Tien-Yu; Chen, Yu-Te; Tsai, Wu-Wei; Chiang, Wen-Jen; Yan, Jing-Yi
2013-01-01
This letter studies the hot-carrier effect in indium–gallium–zinc oxide (IGZO) thin film transistors with symmetric and asymmetric source/drain structures. The different degradation behaviors after hot-carrier stress in symmetric and asymmetric source/drain devices indicate that different mechanisms dominate the degradation. Since the C–V measurement is highly sensitive to trap states compared to the I–V characterization, C–V curves are utilized to analyze the hot-carrier stress-induced trap state generation. Furthermore, the asymmetric C–V measurements C GD (gate-to-drain capacitance) and C GS (gate-to-source capacitance) are used to analyze the trap state in channel location. The asymmetric source/drain structure under hot-carrier stress induces an asymmetric electrical field and causes different degradation behaviors. In this work, the on-current and subthreshold swing (S.S.) degrade under low electrical field, whereas an apparent V t shift occurs under large electrical field. The different degradation behaviors indicate that trap states are generated under a low electrical field and the channel-hot-electron (CHE) effect occurs under a large electrical field. - Highlights: ► Asymmetric structure thin film transistors improve kick-back effect. ► Asymmetric structures under hot-carrier stress induce different degradation. ► Hot-carrier stress leads to capacitance–voltage curve distortion. ► Extra trap states are generated during hot-carrier stress
-
Electrically tunable polarizer based on 2D orthorhombic ferrovalley materials
Shen, Xin-Wei; Tong, Wen-Yi; Gong, Shi-Jing; Duan, Chun-Gang
2018-03-01
The concept of ferrovalley materials has been proposed very recently. The existence of spontaneous valley polarization, resulting from ferromagnetism, in such hexagonal 2D materials makes nonvolatile valleytronic applications realizable. Here, we introduce a new member of ferrovalley family with orthorhombic lattice, i.e. monolayer group-IV monochalcogenides (GIVMs), in which the intrinsic valley polarization originates from ferroelectricity, instead of ferromagnetism. Combining the group theory analysis and first-principles calculations, we demonstrate that, different from the valley-selective circular dichroism in hexagonal lattice, linearly polarized optical selectivity for valleys exists in the new type of ferrovalley materials. On account of the distinctive property, a prototype of electrically tunable polarizer is realized. In the ferrovalley-based polarizer, a laser beam can be optionally polarized in x- or y-direction, depending on the ferrovalley state controlled by external electric fields. Such a device can be further optimized to emit circularly polarized radiation with specific chirality and to realize the tunability for operating wavelength. Therefore, we show that 2D orthorhombic ferrovalley materials are the promising candidates to provide an advantageous platform to realize the polarizer driven by electric means, which is of great importance in extending the practical applications of valleytronics.
-
Directory of Open Access Journals (Sweden)
Amit Kumar Srivastava
2011-09-01
Full Text Available Aluminum-doped ZnO thin films of high optical transmittance (∼ 84-100% and low resistivity (∼ 2.3x10-2 Ωcm have been prepared on glass substrate by the spin coating and subsequent annealing at 500°C for 1h in air or vacuum. Effect of aluminum doping and annealing environment on morphology, optical transmittance and electrical resistivity of ZnO thin films has been studied with possible application as a transparent electrode in photovoltaic. The changes occurring due to aluminum addition include reduction in grain size, root mean square roughness, peak-valley separation, and sheet resistance with improvement in the optical transmittance to 84-100% in the visible range. The origin of low electrical resistivity lies in increase in i electron concentration following aluminum doping (being trivalent, formation of oxygen vacancies due to vacuum annealing, filling of cation site with additional zinc at solution stage itself and ii carrier mobility.
-
International Nuclear Information System (INIS)
Shrestha, Ram M.; Rajbhandari, Salony
2010-01-01
This paper analyzes the sectoral energy consumption pattern and emissions of CO 2 and local air pollutants in the Kathmandu Valley, Nepal. It also discusses the evolution of energy service demands, structure of energy supply system and emissions from various sectors under the base case scenario during 2005-2050. A long term energy system planning model of the Kathmandu Valley based on the MARKet ALlocation (MARKAL) framework is used for the analyses. Furthermore, the paper analyzes the least cost options to achieve CO 2 emission reduction targets of 10%, 20% and 30% below the cumulative emission level in the base case and also discusses their implications for total cost, technology-mix, energy-mix and local pollutant emissions. The paper shows that a major switch in energy use pattern from oil and gas to electricity would be needed in the Valley to achieve the cumulative CO 2 emission reduction target of 30% (ER30). Further, the share of electricity in the cumulative energy consumption of the transport sector would increase from 12% in the base case to 24% in the ER30 case.
-
Energy Technology Data Exchange (ETDEWEB)
Brandt, Matthias
2010-08-16
The present thesis deals with the influence of the electric polarization on properties of free carriers in ZnO-based semiconductor heterostructures. Thereby especially transport properties of free carriers as well as their recombination dynamics are studied. The thesis treats four main topics. The first main topic lies on the phsical properties of the applied materials, here the connection of the band gap and the lattice constant of thin Mg{sub x}Zn{sub 1-x}O films and their magnesium content is described. Furthermore the morphology of such films is discussed. Different substrates and deposition conditions are thereby detailedly considered. The second main topic treats the properties of undoped and phosphorus doped thin ZnO and Mg{sub x}Zn{sub 1-x}O films. The structural, transport, and luminescence properties are here compared and conclusions drawn on the growth conditions. In the third main topic quantum effects on ZnO/Mg{sub x}Zn{sub 1-x}O interfaces are treated. Hereby especially the influence of the electric polarization is considered. The presence of a two-dimensional electron gas is proved, and the necessary conditions for the generation of the so-called confined Stark effect are explained. Especially the growth-relevant parameters are considered. The fourth main topic represent coupling phenomena in ZnO/BaTiO{sub 3} heterostructures. Thereby first the experimentally observed properties of different heterostructures are shown, which were grown on different substrates. Here structural and transport properties hold the spotlight. A model for the description of the formation of space-charge zones in such heterostructures is introduced and applied for the description of the experimental results. The usefulness of the ferroelectric properties of the material BaTiO{sub 3} in combination with semiconducting ZnO were studied. For this ferroelectric field effect transistors were fabricated under application of both materials. The principle suitedness of the
-
Directory of Open Access Journals (Sweden)
nurmalita .
2016-04-01
Full Text Available In this study the samples of Bismuth ceramic superconductors were synthesized by the melt textured growth methods from a 2212 stoichiometric composition in order to obtain a large amount of pure Bi-2212. The effects of Pb substitution on the properties of Bi-based Bi2−xPbxSr2CaCu2Oy superconductor with x = 0, 0.2, and 0.4 were investigated by means of DC electrical resistivity measurements. It has been found that the hole-carrier concentrations per-Cu ion of the samples change independently of Pb content.
-
Takashi Ichimura; Kohei Fujiwara; Hidekazu Tanaka
2014-01-01
Controlling the electronic properties of functional oxide materials via external electric fields has attracted increasing attention as a key technology for next-generation electronics. For transition-metal oxides with metallic carrier densities, the electric-field effect with ionic liquid electrolytes has been widely used because of the enormous carrier doping capabilities. The gate-induced redox reactions revealed by recent investigations have, however, highlighted the complex nature of the ...
-
Elk Valley Rancheria Energy Efficiency and Alternatives Analysis
Energy Technology Data Exchange (ETDEWEB)
Ed Wait, Elk Valley Rancheria; Frank Ziano & Associates, Inc.
2011-11-30
Elk Valley Rancheria; Tribe; renewable energy; energy options analysis. The Elk Valley Rancheria, California ('Tribe') is a federally recognized Indian tribe located in Del Norte County, California, in the northwestern corner of California. The Tribe, its members and Tribal enterprises are challenged by increasing energy costs and undeveloped local energy resources. The Tribe currently lacks an energy program. The Tribal government lacked sufficient information to make informed decisions about potential renewable energy resources, energy alternatives and other energy management issues. To meet this challenge efficiently, the Tribe contracted with Frank Zaino and Associates, Inc. to help become more energy self-sufficient, by reducing their energy costs and promoting energy alternatives that stimulate economic development. Frank Zaino & Associates, Inc. provided a high level economic screening analysis based on anticipated electric and natural gas rates. This was in an effort to determine which alternative energy system will performed at a higher level so the Tribe could reduce their energy model by 30% from alternative fuel sources. The feasibility study will identify suitable energy alternatives and conservation methods that will benefit the Tribe and tribal community through important reductions in cost. The lessons learned from these conservation efforts will yield knowledge that will serve a wider goal of executing energy efficiency measures and practices in Tribal residences and business facilities. Pacific Power is the provider of electrical power to the four properties under review at $ 0.08 per Kilowatt-hour (KWH). This is a very low energy cost compared to alternative energy sources. The Tribe used baseline audits to assess current and historic energy usage at four Rancheria owned facilities. Past electric and gas billing statements were retained for review for the four buildings that will be audited. A comparative assessment of the various
-
International Nuclear Information System (INIS)
Tollinsky, N.
2010-01-01
RES Equipment Sales of Dryden, Ontario is leading the development of a battery-powered personnel utility vehicle for underground mining applications. Among the advantages of the battery-powered personnel carrier are quietness of the carrier and zero emissions, which eliminates particulates from diesel engines and reduces the need for ventilation. This article discussed the design and building of the vehicle. It was designed to accommodate up to 3 battery packs, depending on the frequency of use. Swapping batteries takes between 2 or 3 minutes. Spent batteries must be plugged in for 6 hours and rest for another 6 to 8 hours before being ready for service. The vehicle accommodates 2 or 3 people and travels at speeds of 6 to 8 miles per hour. This article also provided background information on RES Equipment Sales. The company remanufactures underground mining equipment, including load-haul-dump machines, jumbos, haul trucks and utility vehicles. In addition, the company sells and services new equipment, including Oldenburg Cannon jumbos, scalers and utility vehicles, as well as Canun International pneumatic rock drills and NPK rock breakers. 1 ref., 1 fig.
-
West Valley facility spent fuel handling, storage, and shipping experience
International Nuclear Information System (INIS)
Bailey, W.J.
1990-11-01
The result of a study on handling and shipping experience with spent fuel are described in this report. The study was performed by Pacific Northwest Laboratory (PNL) and was jointly sponsored by the US Department of Energy (DOE) and the Electric Power Research Institute (EPRI). The purpose of the study was to document the experience with handling and shipping of relatively old light-water reactor (LWR) fuel that has been in pool storage at the West Valley facility, which is at the Western New York Nuclear Service Center at West Valley, New York and operated by DOE. A subject of particular interest in the study was the behavior of corrosion product deposits (i.e., crud) deposits on spent LWR fuel after long-term pool storage; some evidence of crud loosening has been observed with fuel that was stored for extended periods at the West Valley facility and at other sites. Conclusions associated with the experience to date with old spent fuel that has been stored at the West Valley facility are presented. The conclusions are drawn from these subject areas: a general overview of the West Valley experience, handling of spent fuel, storing of spent fuel, rod consolidation, shipping of spent fuel, crud loosening, and visual inspection. A list of recommendations is provided. 61 refs., 4 figs., 5 tabs
-
Coupling mechanism of electric vehicle and grid under the background of smart grid
Dong, Mingyu; Li, Dezhi; Chen, Rongjun; Shu, Han; He, Yongxiu
2018-02-01
With the development of smart distribution technology in the future, electric vehicle users can not only charge reasonably based on peak-valley price, they can also discharge electricity into the power grid to realize their economic benefit when it’s necessary and thus promote peak load shifting. According to the characteristic that future electric vehicles can discharge, this paper studies the interaction effect between electric vehicles and the grid based on TOU (time of use) Price Strategy. In this paper, four scenarios are used to compare the change of grid load after implementing TOU Price Strategy. The results show that the wide access of electric vehicles can effectively reduce peak and valley difference.
-
Energy carriers in Norway; Energibaerere i Norge
Energy Technology Data Exchange (ETDEWEB)
2008-01-15
Within the Norwegian energy consumption, electricity is by far the most dominant energy carrier. In the last thirty years electricity has had an increased significance, while oil has been reduce. A trend that is likely to continue. Energy politics has among others these objectives: environment, reliability of supply and effective energy supply. These objectives are somewhat contradictory. In agreement with the environmental politic phasing out oil leads to a reduction in greenhouse gases. However this politic will have a local impact only effecting Norway, in a larger European connection it might lead to a larger net emission of CO{sub 2}. A political intervention in the energy market might also lead to a reduction in the energy markets effectiveness and flexibility. This report addresses this problem: If a total phase out of the stationary oil consumption is conducted, what energy carriers will this consumption convert to?
-
Assessment of bilayer silicene to probe as quantum spin and valley Hall effect
Rehman, Majeed Ur; Qiao, Zhenhua
2018-02-01
Silicene takes precedence over graphene due to its buckling type structure and strong spin orbit coupling. Motivated by these properties, we study the silicene bilayer in the presence of applied perpendicular electric field and intrinsic spin orbit coupling to probe as quantum spin/valley Hall effect. Using analytical approach, we calculate the spin Chern-number of bilayer silicene and then compare it with monolayer silicene. We reveal that bilayer silicene hosts double spin Chern-number as compared to single layer silicene and therefore accordingly has twice as many edge states in contrast to single layer silicene. In addition, we investigate the combined effect of intrinsic spin orbit coupling and the external electric field, we find that bilayer silicene, likewise single layer silicene, goes through a phase transitions from a quantum spin Hall state to a quantum valley Hall state when the strength of the applied electric field exceeds the intrinsic spin orbit coupling strength. We believe that the results and outcomes obtained for bilayer silicene are experimentally more accessible as compared to bilayer graphene, because of strong SO coupling in bilayer silicene.
-
Energy Technology Data Exchange (ETDEWEB)
Lim, Eunju, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp [Department of Applied Physics, Institute of Nanosensor and Biotechnology, Dankook University, Jukjeon-dong, Gyeonggi-do 448-701 (Korea, Republic of); Taguchi, Dai, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp; Iwamoto, Mitsumasa, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)
2014-08-18
We studied the carrier transport and carrier trapping in indium tin oxide/polyimide (PI)/6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)/Au diodes by using charge modulation spectroscopy (CMS) and time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurements. TR-EFISHG directly probes the spatial carrier behaviors in the diodes, and CMS is useful in explaining the carrier motion with respect to energy. The results clearly indicate that the injected carriers move across TIPS-pentacene thorough the molecular energy states of TIPS-pentacene and accumulate at the PI/TIPS-pentacene interface. However, some carriers are trapped in the PI layers. These findings take into account the capacitance-voltage and current-voltage characteristics of the diodes.
-
Time Resolved Studies of Carrier Dynamics in III -v Heterojunction Semiconductors.
Westland, Duncan James
Available from UMI in association with The British Library. Requires signed TDF. Picosecond time-resolution photoluminescence spectroscopy has been used to study transient processes in Ga _{.47}In_{.53 }As/InP multiple quantum wells (MQWs), and in bulk Ga_{.47}In _{.53}As and GaSb. To facilitate the experimental studies, apparatus was constructed to allow the detection of transient luminescence with 3ps time resolution. A frequency upconversion technique was employed. Relaxation of energetic carriers in bulk Ga _{.47}In_{.53 }As by optic phonons has been investigated, and, at carrier densities ~3 times 10^{18}cm ^{-3} is found to be a considerably slower process than simple theory predicts. The discrepancy is resolved by the inclusion of a non-equilibrium population of longitudinal optic phonons in the theoretical description. Slow energy loss is also observed in a 154A MQW under similar conditions, but carriers are found to relax more quickly in a 14A MQW with a comparable repeat period. The theory of non-equilibrium mode occupation is modified to describe the case of a MQW and is found to agree with experiment. Carrier relaxation in GaSb is studied and the importance of occupation of the L _6 conduction band valley in this material is demonstrated. The ambipolar diffusion of a photoexcited carrier plasma through an InP capping layer was investigated using an optical time-of-flight technique. This experiment also enables the efficiency of carrier capture by a Ga _{.47}In_{.53 }As quantum well to be determined. A capture time of 4ps was found.
-
Dominant role of many-body effects on the carrier distribution function of quantum dot lasers
Peyvast, Negin; Zhou, Kejia; Hogg, Richard A.; Childs, David T. D.
2016-03-01
The effects of free-carrier-induced shift and broadening on the carrier distribution function are studied considering different extreme cases for carrier statistics (Fermi-Dirac and random carrier distributions) as well as quantum dot (QD) ensemble inhomogeneity and state separation using a Monte Carlo model. Using this model, we show that the dominant factor determining the carrier distribution function is the free carrier effects and not the choice of carrier statistics. By using empirical values of the free-carrier-induced shift and broadening, good agreement is obtained with experimental data of QD materials obtained under electrical injection for both extreme cases of carrier statistics.
-
Interface recombination influence on carrier transport
International Nuclear Information System (INIS)
Konin, A
2013-01-01
A theory of interface recombination in the semiconductor–semiconductor junction is developed. The interface recombination rate dependence on the nonequilibrium carrier densities is derived on the basis of a model in which the interface recombination occurs through the mechanism of trapping. The general relation between the interface recombination parameters at small carrier density deviation from the equilibrium ones is obtained. The validity of this relation is proved considering the generation of the Hall electric field in the extrinsic semiconductor sample. The anomalous Hall electromotive force in a weak magnetic field was investigated and interpreted by means of a new interface recombination model. The experimental data corroborate the developed theory. (paper)
-
2012-06-05
... Valley Warm Springs Management Plan/Environmental Impact Statement, Death Valley National Park, Inyo... an Environmental Impact Statement for the Saline Valley Warm Springs Management Plan, Death Valley... analysis process for the Saline Valley Warm Springs Management Plan for Death Valley [[Page 33238...
-
Quantum spin/valley Hall effect and topological insulator phase transitions in silicene
Tahir, M.
2013-04-26
We present a theoretical realization of quantum spin and quantum valley Hall effects in silicene. We show that combination of an electric field and intrinsic spin-orbit interaction leads to quantum phase transitions at the charge neutrality point. This phase transition from a two dimensional topological insulator to a trivial insulating state is accompanied by a quenching of the quantum spin Hall effect and the onset of a quantum valley Hall effect, providing a tool to experimentally tune the topological state of silicene. In contrast to graphene and other conventional topological insulators, the proposed effects in silicene are accessible to experiments.
-
The expected greenhouse benefits from developing magma power at Long Valley, California
International Nuclear Information System (INIS)
Haraden, John.
1995-01-01
Magma power is the production of electricity from shallow magma bodies. Before magma becomes a practical source of power, many engineering problems must still be solved. When they are solved, the most likely site for the first magma power plant is Long Valley, California, USA. In this paper, we examine the greenhouse benefits from developing Long Valley. By generating magma power and by curtailing an equal amount of fossil power, we estimate the expected mass and the expected discounted value of reduced CO 2 emissions. For both measures, the expected benefits seem to be substantial. (author)
-
Quantum spin/valley Hall effect and topological insulator phase transitions in silicene
Tahir, M.; Manchon, Aurelien; Sabeeh, K.; Schwingenschlö gl, Udo
2013-01-01
We present a theoretical realization of quantum spin and quantum valley Hall effects in silicene. We show that combination of an electric field and intrinsic spin-orbit interaction leads to quantum phase transitions at the charge neutrality point. This phase transition from a two dimensional topological insulator to a trivial insulating state is accompanied by a quenching of the quantum spin Hall effect and the onset of a quantum valley Hall effect, providing a tool to experimentally tune the topological state of silicene. In contrast to graphene and other conventional topological insulators, the proposed effects in silicene are accessible to experiments.
-
Resource assessment of the Imperial Valley. Final report
Energy Technology Data Exchange (ETDEWEB)
Biehler, S.; Lee, T.
1977-01-01
A resource assessment of the Imperial Valley has been made based on the use of the gravity anomalies as indicators of total excess mass. These data indicate a potential of producing electric power of 7 to 80 thousand megawatts for 30 years. Over half of the total potential is located in the Salton Sea Anomaly and approximately half of the potential of the Salton Sea field is water covered. An attempt has been made to assess not only the heat in storage in the fluid but also recoverable from the country rock by reinjection. Based on calculations, the natural recharge rate of heat in the Valley due to sea floor spreading is too small to give the resource an indefinite life-span since the economic rates of withdrawal appear to be at least an order of magnitude greater.
-
Energy Technology Data Exchange (ETDEWEB)
Mohd Sarjidan, M.A., E-mail: mohd.arif@um.edu.my; Mohd Mokhtar, H.A.; Abd Majid, W.H., E-mail: q3haliza@um.edu.my
2015-03-15
A single-layer white polymer light-emitting device (WPLED) has been fabricated using spin coating technique. The device was constructed as ITO/PEDOT:PSS(50 nm)/SPW-111(50 nm)/LiF(1 nm)/Al(100 nm). Indium tin oxide (ITO) and poly(3,4-ethylenedioxythiophene) Polystyrene sulfonate (PEDOT:PSS) are used as the transparent anode. SPW-111 is fabricated as a white emissive layer and lithium fluoride (LiF) and aluminum (Al) are used as reflecting cathode. Energy band diagram of the device was estimated from a combination of ultraviolet–visible (UV–vis) and current–voltage (J–V) analyses. Charge carrier mobility (μ) of PLED was evaluated using negative differential susceptance (−ΔB) method from impedance spectroscopy (IS) analysis. The calculated μ of the SPW-111 device is in the magnitude of 10{sup −6} cm{sup 2}/V/s. - Highlights: • Single layer PLED has been fabricated with spin-coating technique and device performance has been evaluated. • Energy band diagram of the SPW-111 is estimated from optical and electrical analyses. • Charge carrier mobility of the SPW-111 materials is obtained by impedance spectroscopy.
-
Drift of nonequilibrium charge carriers in GaAs-crystals with traps in ultrasonic fields
International Nuclear Information System (INIS)
Zaveryukhina, N.N.; Zaveryukhin, B.N.; Zaveryukhina, E.B.
2007-01-01
Full text: The drift of nonequilibrium charge carriers in a semiconductor is one of the basic processes determining the efficiency of semiconductor photodetectors. Gallium arsenide possesses certain advantages to other semiconductors in this respect, which allow GaAs-photodetectors to be obtained which possess the maximum efficiency in comparison with all other systems. The purpose of this study was to deepen and expand our knowledge about the acoustic-drift processes in GaAs- crystals. As is known, the drift of nonequilibrium charge carriers in a semiconductor is determined either by external electric fields and/or by internal (built-in) electrostatic fields related to an impurity concentration gradient in the semiconductor. Gallium arsenide is a piezoelectric semiconductor with a structure possessing no center of symmetry. An electric field applied to such a crystal produces deformation of the crystal, and vice versa, any deformation of the crystal leads to the appearance of an induced electric field. Therefore, investigation of the effect of deformation on the drift of nonequilibrium charge carriers is a very important task. One of the possible straining factors is ultrasonic wave. Interaction of the charge carriers with ultrasonic waves in piezo-semiconductors is mediated by piezo exertion. Straining a semiconductor by an ultrasonic wave field gives rise to a force acting upon the charge carriers, which is proportional to the wave vector and the piezoelectric constant of the crystal. The physics of interaction between an ultrasonic wave and nonequilibrium charge carriers in GaAs, as well as in non-polar semiconductors (Si, Ge), consists in the energy and momentum exchange between the wave and the carriers. Besides the ultrasonic waves interact with the traps of carriers and devastate them. These both acoustic effects lead to rise of amplitude of signal of GaAs-photodetectors. (authors)
-
Direct measurement of discrete valley and orbital quantum numbers in bilayer graphene.
Hunt, B M; Li, J I A; Zibrov, A A; Wang, L; Taniguchi, T; Watanabe, K; Hone, J; Dean, C R; Zaletel, M; Ashoori, R C; Young, A F
2017-10-16
The high magnetic field electronic structure of bilayer graphene is enhanced by the spin, valley isospin, and an accidental orbital degeneracy, leading to a complex phase diagram of broken symmetry states. Here, we present a technique for measuring the layer-resolved charge density, from which we directly determine the valley and orbital polarization within the zero energy Landau level. Layer polarization evolves in discrete steps across 32 electric field-tuned phase transitions between states of different valley, spin, and orbital order, including previously unobserved orbitally polarized states stabilized by skew interlayer hopping. We fit our data to a model that captures both single-particle and interaction-induced anisotropies, providing a complete picture of this correlated electron system. The resulting roadmap to symmetry breaking paves the way for deterministic engineering of fractional quantum Hall states, while our layer-resolved technique is readily extendable to other two-dimensional materials where layer polarization maps to the valley or spin quantum numbers.The phase diagram of bilayer graphene at high magnetic fields has been an outstanding question, with orders possibly between multiple internal quantum degrees of freedom. Here, Hunt et al. report the measurement of the valley and orbital order, allowing them to directly reconstruct the phase diagram.
-
Imaging ballistic carrier trajectories in graphene using scanning gate microscopy
Energy Technology Data Exchange (ETDEWEB)
Morikawa, Sei; Masubuchi, Satoru [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan); Dou, Ziwei; Wang, Shu-Wei; Smith, Charles G.; Connolly, Malcolm R., E-mail: mrc61@cam.ac.uk [Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge CB3 0HE (United Kingdom); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Machida, Tomoki, E-mail: tmachida@iis.u-tokyo.ac.jp [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan); Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan)
2015-12-14
We use scanning gate microscopy to map out the trajectories of ballistic carriers in high-mobility graphene encapsulated by hexagonal boron nitride and subject to a weak magnetic field. We employ a magnetic focusing geometry to image carriers that emerge ballistically from an injector, follow a cyclotron path due to the Lorentz force from an applied magnetic field, and land on an adjacent collector probe. The local electric field generated by the scanning tip in the vicinity of the carriers deflects their trajectories, modifying the proportion of carriers focused into the collector. By measuring the voltage at the collector while scanning the tip, we are able to obtain images with arcs that are consistent with the expected cyclotron motion. We also demonstrate that the tip can be used to redirect misaligned carriers back to the collector.
-
Valley qubit in a gated MoS2 monolayer quantum dot
Pawłowski, J.; Żebrowski, D.; Bednarek, S.
2018-04-01
The aim of the presented research is to design a nanodevice, based on a MoS2 monolayer, performing operations on a well-defined valley qubit. We show how to confine an electron in a gate-induced quantum dot within the monolayer, and to perform the not operation on its valley degree of freedom. The operations are carried out all electrically via modulation of the confinement potential by oscillating voltages applied to the local gates. Such quantum dot structure is modeled realistically. Through these simulations we investigate the possibility of realization of a valley qubit in analogy with a realization of the spin qubit. We accurately model the potential inside the nanodevice accounting for proper boundary conditions on the gates and space-dependent materials permittivity by solving the generalized Poisson's equation. The time evolution of the system is supported by realistic self-consistent Poisson-Schrödinger tight-binding calculations. The tight-binding calculations are further confirmed by simulations within the effective continuum model.
-
Charge carrier coherence and Hall effect in organic semiconductors
Yi, H. T.; Gartstein, Y. N.; Podzorov, V.
2016-01-01
Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor. PMID:27025354
-
Charge carrier coherence and Hall effect in organic semiconductors.
Yi, H T; Gartstein, Y N; Podzorov, V
2016-03-30
Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.
-
Ichimura, Takashi; Fujiwara, Kohei; Tanaka, Hidekazu
2014-07-24
Controlling the electronic properties of functional oxide materials via external electric fields has attracted increasing attention as a key technology for next-generation electronics. For transition-metal oxides with metallic carrier densities, the electric-field effect with ionic liquid electrolytes has been widely used because of the enormous carrier doping capabilities. The gate-induced redox reactions revealed by recent investigations have, however, highlighted the complex nature of the electric-field effect. Here, we use the gate-induced conductance modulation of spinel ZnxFe₃₋xO₄ to demonstrate the dual contributions of volatile and non-volatile field effects arising from electronic carrier doping and redox reactions. These two contributions are found to change in opposite senses depending on the Zn content x; virtual electronic and chemical field effects are observed at appropriate Zn compositions. The tuning of field-effect characteristics via composition engineering should be extremely useful for fabricating high-performance oxide field-effect devices.
-
Hot-electron effect in spin relaxation of electrically injected electrons in intrinsic Germanium.
Yu, T; Wu, M W
2015-07-01
The hot-electron effect in the spin relaxation of electrically injected electrons in intrinsic germanium is investigated by the kinetic spin Bloch equations both analytically and numerically. It is shown that in the weak-electric-field regime with E ≲ 0.5 kV cm(-1), our calculations have reasonable agreement with the recent transport experiment in the hot-electron spin-injection configuration (2013 Phys. Rev. Lett. 111 257204). We reveal that the spin relaxation is significantly enhanced at low temperature in the presence of weak electric field E ≲ 50 V cm(-1), which originates from the obvious center-of-mass drift effect due to the weak electron-phonon interaction, whereas the hot-electron effect is demonstrated to be less important. This can explain the discrepancy between the experimental observation and the previous theoretical calculation (2012 Phys. Rev. B 86 085202), which deviates from the experimental results by about two orders of magnitude at low temperature. It is further shown that in the strong-electric-field regime with 0.5 ≲ E ≲ 2 kV cm(-1), the spin relaxation is enhanced due to the hot-electron effect, whereas the drift effect is demonstrated to be marginal. Finally, we find that when 1.4 ≲ E ≲ 2 kV cm(-1) which lies in the strong-electric-field regime, a small fraction of electrons (≲5%) can be driven from the L to Γ valley, and the spin relaxation rates are the same for the Γ and L valleys in the intrinsic sample without impurity. With the negligible influence of the spin dynamics in the Γ valley to the whole system, the spin dynamics in the L valley can be measured from the Γ valley by the standard direct optical transition method.
-
Tuning Valley Polarization in a WSe_{2} Monolayer with a Tiny Magnetic Field
Directory of Open Access Journals (Sweden)
T. Smoleński
2016-05-01
Full Text Available In monolayers of semiconducting transition metal dichalcogenides, the light helicity (σ^{+} or σ^{-} is locked to the valley degree of freedom, leading to the possibility of optical initialization of distinct valley populations. However, an extremely rapid valley pseudospin relaxation (at the time scale of picoseconds occurring for optically bright (electric-dipole active excitons imposes some limitations on the development of opto-valleytronics. Here, we show that valley pseudospin relaxation of excitons can be significantly suppressed in a WSe_{2} monolayer, a direct-gap two-dimensional semiconductor with the exciton ground state being optically dark. We demonstrate that the already inefficient relaxation of the exciton pseudospin in such a system can be suppressed even further by the application of a tiny magnetic field of about 100 mT. Time-resolved spectroscopy reveals the pseudospin dynamics to be a two-step relaxation process. An initial decay of the pseudospin occurs at the level of dark excitons on a time scale of 100 ps, which is tunable with a magnetic field. This decay is followed by even longer decay (>1 ns, once the dark excitons form more complex pseudo-particles allowing for their radiative recombination. Our findings of slow valley pseudospin relaxation easily manipulated by the magnetic field open new prospects for engineering the dynamics of the valley pseudospin in transition metal dichalcogenides.
-
Photo-generated carriers lose energy during extraction from polymer-fullerene solar cells
Melianas, Armantas
2015-11-05
In photovoltaic devices, the photo-generated charge carriers are typically assumed to be in thermal equilibrium with the lattice. In conventional materials, this assumption is experimentally justified as carrier thermalization completes before any significant carrier transport has occurred. Here, we demonstrate by unifying time-resolved optical and electrical experiments and Monte Carlo simulations over an exceptionally wide dynamic range that in the case of organic photovoltaic devices, this assumption is invalid. As the photo-generated carriers are transported to the electrodes, a substantial amount of their energy is lost by continuous thermalization in the disorder broadened density of states. Since thermalization occurs downward in energy, carrier motion is boosted by this process, leading to a time-dependent carrier mobility as confirmed by direct experiments. We identify the time and distance scales relevant for carrier extraction and show that the photo-generated carriers are extracted from the operating device before reaching thermal equilibrium.
-
Energy Technology Data Exchange (ETDEWEB)
Greene-Diniz, Gabriel; Greer, J. C. [Tyndall National Institute, Lee Maltings, Prospect Row, Cork (Ireland); Fischetti, M. V. [Department of Materials Science and Engineering, University of Texas at Dallas, 800 West Campbell Road RL10, Richardson, Texas 75080 (United States)
2016-02-07
Several theoretical electronic structure methods are applied to study the relative energies of the minima of the X- and L-conduction-band satellite valleys of In{sub x}Ga{sub 1−x}As with x = 0.53. This III-V semiconductor is a contender as a replacement for silicon in high-performance n-type metal-oxide-semiconductor transistors. The energy of the low-lying valleys relative to the conduction-band edge governs the population of channel carriers as the transistor is brought into inversion, hence determining current drive and switching properties at gate voltages above threshold. The calculations indicate that the position of the L- and X-valley minima are ∼1 eV and ∼1.2 eV, respectively, higher in energy with respect to the conduction-band minimum at the Γ-point.
-
Directory of Open Access Journals (Sweden)
Xuan-Ting Ji
2017-10-01
Full Text Available Recent experiments on Weyl semimetals reveal that charged impurities may play an important role. We use a screened Coulomb disorder to model the charged impurities, and study the magneto-transport in a two-node Weyl semimetal. It is found that when the external magnetic field is applied parallel to the electric field, the calculated longitudinal magnetoconductivity shows positive in the magnetic field, which is just the negative longitudinal magnetoresistivity (LMR observed in experiments. When the two fields are perpendicular to each other, the transverse magnetoconductivities are measured. It is found that the longitudinal (transverse magnetoconductivity is suppressed (enhanced sensitively with increasing the screening length. This feature makes it hardly to observe the negative LMR in Weyl semimetals experimentally owing to a small screening length. Our findings gain insight into further understanding on recently actively debated magneto-transport behaviors in Weyl semimetals. Furthermore we studied the relative weight of the inter-valley scattering and the intra-valley scattering. It shows that the former is as important as the latter and even dominates in the case of strong magnetic fields and small screening length. We emphasize that the discussions on inter-valley scattering is out of the realm of one-node model which has been studied.
-
International Nuclear Information System (INIS)
Byfield, M.
2010-01-01
This article discussed remedial activities undertaken in the Turner Valley. Remedial action in the valley must satisfy the financial concerns of engineers and investors as well as the environmental concerns of residents and regulators. Natural gas production in the Turner Valley began in 1914. The production practices were harmful and wasteful. Soil and water pollution was not considered a problem until recently. The impacts of cumulative effects and other pollution hazards are now being considered as part of many oil and gas environmental management programs. Companies know it is cheaper and safer to prevent pollutants from being released, and more efficient to clean them up quickly. Oil and gas companies are also committed to remediating historical problems. Several factors have simplified remediation plans in the Turner Valley. Area real estate values are now among the highest in Alberta. While the valley residents are generally friendly to the petroleum industry, strong communication with all stakeholders in the region is needed. 1 fig.
-
Microscopic study of carrier transport in the organic semiconductor zinc-phthalocyanine
Energy Technology Data Exchange (ETDEWEB)
Duarte, Joao Piroto [ESTeSC, Polytechnic Institute of Coimbra, 3040-854 Coimbra (Portugal); CEMDRX, Physics Department, University of Coimbra, Rua Larga, 3004-516 Coimbra (Portugal); Alberto, Helena Vieira; Vilao, Rui Cesar; Gil, Joao M.; Weidinger, Alois; Campos, Nuno Ayres de [CEMDRX, Physics Department, University of Coimbra, Rua Larga, 3004-516 Coimbra (Portugal)
2010-04-15
Nominally undoped zinc-phthalocyanine (ZnPc) was investigated using Muon Spin Rotation ({mu}SR) to probe microscopic carrier transport properties. The study focused on the relaxation of the positive muon's polarisation produced by spin-flip scattering with charge carriers. An energy of 71(8) meV was found for the temperature activation of carrier jumps, a value that does not match the activation energies known in ZnPc from electrical measurements, and that was attributed to a fast transport component in this material. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
-
Electrical properties of molecular crystals
International Nuclear Information System (INIS)
Barraud, A.
1968-01-01
This literature survey summarizes the electrical properties of molecular crystals: molecular crystal structure, transport and excitation mechanisms of charge-carriers, and differences compared to inorganic semi-conductors. The main results concerning the electrical conductivity of the most-studied molecular crystals are presented, together with the optical and photo-electrical properties of these crystals. Finally the different types of electrical measurements used are reviewed, as well as the limits of each method. (author) [fr
-
Magnetic susceptibility of free charge carriers in bismuth tellurides (Bi2Te3)
International Nuclear Information System (INIS)
Guha Thakurta, S.R.; Dutta, A.K.
1977-01-01
Principal magnetic susceptibilities of both p- and n-type Bi 2 Te 3 crystals have been measured over the range of temperature 90 deg K to 650 deg K. The observed susceptibilities are diamagnetic and temperature dependent. This temperature dependence has been attributed to the contribution of the free charge carriers to the susceptibilities. From the observed susceptibilities the carrier-susceptibilities have been separately obtained which are found to be paramagnetic. From the total carrier-susceptibilities, the susceptibilities of the carriers which are thermally liberated in the intrinsic region have been separated. From an analysis of the carrier-susceptibilities the band gap and its temperature coefficient have been found out and these compare favourably with those obtained from electrical measurements. (author)
-
Thermal activation of carriers from semiconductor quantum wells
International Nuclear Information System (INIS)
Johnston, M.B.; Herz, L.M.; Dao, L.V.; Gal, M.; Tan, H.H.; Jagadish, C.
1999-01-01
Full text: We have conducted a systematic investigation of the thermal excitation of carriers in confined states of quantum wells. Carriers may be injected into a sample containing a quantum well electrically or optically, once there they rapidly thermalise and are captured by the confined state of the quantum well. Typically electrons and holes recombine radiatively from their respective quantum well states. As a quantum well sample is heated from low temperatures (∼10K), phonon interactions increase which leads to carriers being excited from the well region into the higher energy, barrier region of the sample. Since carrier recombination from barrier regions is via non-radiative processes, there is strong temperature dependence of photoluminescence from the quantum well region. We measured quantum well photoluminescence as a function of excitation intensity and wavelength over the temperature range from 8K to 300K. In high quality InGaAs quantum wells we found unexpected intensity dependence of the spectrally integrated temperature dependent photoluminescence. We believe that this is evidence for by the existence of saturable states at the interfaces of the quantum wells
-
Atmospheric dispersion experiments over complex terrain in a spanish valley site (Guardo-90)
International Nuclear Information System (INIS)
Ibarra, J.I.
1991-01-01
An intensive field experimental campaign was conducted in Spain to quantify atmospheric diffusion within a deep, steep-walled valley in rough, mountainous terrain. The program has been sponsored by the spanish companies of electricity and is intended to validate existing plume models and to provide the scientific basis for future model development. The atmospheric dispersion and transport processes in a 40x40 km domain were studied in order to evaluate SO 2 and SF 6 releases from an existing 185 m chimney and ground level sources in a complex terrain valley site. Emphasis was placed on the local mesoscale flows and light wind stable conditions. Although the measuring program was intensified during daytime for dual tracking of SO 2 /SF 6 from an elevated source, nighttime experiments were conducted for mountain-valley flows characterization. Two principle objectives were pursued: impaction of plumes upon elevated terrain, and diffusion of gases within the valley versus diffusion over flat, open terrain. Artificial smoke flows visualizations provided qualitative information: quantitative diffusion measurements were obtained using sulfur hexafluoride gas with analysis by highly sensitive electron capture gas chromatographs systems. Fourteen 2 hours gaseous tracer releases were conducted
-
Germanium Doping to Improve Carrier Mobility in CdO Films
Directory of Open Access Journals (Sweden)
A. A. Dakhel
2013-01-01
Full Text Available This investigation addresses the structural, optical, and electrical properties of germanium incorporated cadmium oxide (CdO : Ge thin films. The focus was on the improvement in carrier mobility to achieve high transparency for near-infrared light and low resistivity at the same time. The properties were studied using X-ray diffraction, SEM, spectral photometry, and Hall measurements. All CdO : Ge films were polycrystalline with high texture orientation along [111] direction. It was observed that it is possible to control the carrier concentration ( and mobility ( with Ge-incorporation level. The mobility could be improved to a highest value of cm2/V·s with Ge doping of 0.25 wt% while maintaining the electrical resistivity as low as Ω·cm and good transparency % in the NIR spectral region. The results of the present work proved to select Ge as dopant to achieve high carrier mobility with low resistivity for application in transparent conducting oxide (TCO field. Generally, the properties found make CdO : Ge films particularly interesting for the application in optoelectronic devices like thin-film solar cells.
-
Valley-filtered edge states and quantum valley Hall effect in gated bilayer graphene.
Zhang, Xu-Long; Xu, Lei; Zhang, Jun
2017-05-10
Electron edge states in gated bilayer graphene in the quantum valley Hall (QVH) effect regime can carry both charge and valley currents. We show that an interlayer potential splits the zero-energy level and opens a bulk gap, yielding counter-propagating edge modes with different valleys. A rich variety of valley current states can be obtained by tuning the applied boundary potential and lead to the QVH effect, as well as to the unbalanced QVH effect. A method to individually manipulate the edge states by the boundary potentials is proposed.
-
DEFF Research Database (Denmark)
Leißner, Till; Jensen, Per Baunegaard With; Liu, Yiming
2017-01-01
The device performance of organic transistors is strongly influenced by the charge carrier distribution. A range of factors effect this distribution, including injection barriers at the metal-semiconductor interface, the morphology of the organic film, and charge traps at the dielectric/organic...... interface or at grain boundaries. In our comprehensive experimental and analytical work we demonstrate a method to characterize the charge carrier density in organic thin-film transistors using time-resolved photoluminescence spectroscopy. We developed a numerical model that describes the electrical...... and optical responses consistently. We determined the densities of free and trapped holes at the interface between the organic layer and the SiO2 gate dielectric by comparison to electrical measurements. Furthermore by applying fluorescence lifetime imaging microscopy we determine the local charge carrier...
-
Energy Technology Data Exchange (ETDEWEB)
Suzuki, T.; Takeshita, K.; Ishino, R.
2000-06-01
The high-speed distribution line carrier systems on underground distribution lines are being developed in Germany. To estimate these systems on Japanese overhead low voltage distribution lines, the Carrier Propagation Program has been developed and applicability of OFDM system was roughly estimated. 1. Carrier Propagation Program Carrier Propagation Program that calculates the carrier propagation characteristics of any line structure was developed. 2. Carrier propagation characteristics Carrier propagation characteristics on typical Japanese overhead low voltage distribution lines were calculated 3.Rough estimation of OFDM system Electric fields caused by carrier at near point were calculated on the basis on carrier propagation characteristics. Results of rough estimation are as follows: - Electric field caused by carrier of more than 2Mbps system exceeds the value of the regulation. (author)
-
Energy Technology Data Exchange (ETDEWEB)
Montelongo-Reyes, M.M.; Otazo-Sánchez, E.M.; Romo-Gómez, C.; Gordillo-Martínez, A.J.; Galindo-Castillo, E.
2015-09-15
The greenhouse gases and black carbon emission inventory from IPCC key category Energy was accomplished for the Mezquital Valley, one of the most polluted regions in Mexico, as the Mexico City wastewater have been continuously used in agricultural irrigation for more than a hundred years. In addition, thermoelectric, refinery, cement and chemistry industries are concentrated in the southern part of the valley, near Mexico City. Several studies have reported air, soil, and water pollution data and its main sources for the region. Paradoxically, these sources contaminate the valley, but boosted its economic development. Nevertheless, no research has been done concerning GHG emissions, or climate change assessment. This paper reports inventories performed by the 1996 IPCC methodology for the baseline year 2005. Fuel consumption data were derived from priority sectors such as electricity generation, refineries, manufacturing & cement industries, transportation, and residential use. The total CO{sub 2} emission result was 13,894.9 Gg, which constituted three-quarters of Hidalgo statewide energy category. The principal CO{sub 2} sources were energy transformation (69%) and manufacturing (19%). Total black carbon emissions were estimated by a bottom-up method at 0.66 Gg. The principal contributor was on-road transportation (37%), followed by firewood residential consumption (26%) and cocked brick manufactures (22%). Non-CO{sub 2} gas emissions were also significant, particularly SO{sub 2} (255.9 Gg), which accounts for 80% of the whole Hidalgo State emissions. Results demonstrated the negative environmental impact on Mezquital Valley, caused by its role as a Megacity secondary fuel and electricity provider, as well as by the presence of several cement industries. - Highlights: • First GHG & black carbon inventory for Mezquital Valley: Mexico City energy supplier • Energy industries caused the largest CO{sub 2} and SO{sub 2} emissions from residual fuel oil. • Diesel
-
Analysis of exploratory wells in the Cerro Prieto Field and the Mexicali Valley
Energy Technology Data Exchange (ETDEWEB)
Cobo R., J.M.; Bermejo M., F.J.
1982-08-10
Agricultural development in the Mexicali Valley and in the high cost of electric power required to operate the irrigation wells in the Valley prompted the Mexican government to investigate the possibility of taking advantage of thermal manifestations in the area located 28 km southeast of the city of Mexicali to generate electric power and thereby partially decrease the flight of foreign exchange. In 1958, a geologic study of the southern and southeastern zone of Mexicali was conducted to identify the possibilities of tapping geothermal resources. The purpose of this study was to gain knowledge of the geologic conditions in this area and, if possible, to establish the location of exploratory and production wells and, on the basis of the results of the former, examine the geologic history in order to gain knowledge and understanding of the structural control of the steam. On the basis of this study, it was recommended that 3 exploratory wells should be drilled in order to locate weak zones that would easily allow for steam flow.
-
International Nuclear Information System (INIS)
Converse, Alvin O.
2006-01-01
The need for large-scale storage, when the energy source is subject to periods of low-energy generation, as it would be in a direct solar or wind energy system, could be the factor which justifies the choice of hydrogen, rather than electricity, as the principal energy carrier. It could also be the 'Achilles heel' of a solar-based sustainable energy system, tipping the choice to a nuclear breeder system
-
Characterization of the hole transport and electrical properties in poly(9,9-dioctylfluorene)
International Nuclear Information System (INIS)
Wang, L.G.; Zhang, H.W.; Tang, X.L.; Song, Y.Q.
2011-01-01
A systematic study of the hole transport and electrical properties in blue-emitting polymers as poly(9,9-dioctylfluorene) (PFO) has been performed. We show that the temperature dependent and thickness dependent current density versus voltage characteristics of PFO hole-only devices can be accurately described using our recently introduced improved mobility model based on both the Arrhenius temperature dependence and non-Arrhenius temperature dependence. Within the improved model, the mobility depends on three important physical quantities: temperature, carrier density, and electric field. For the polymer studied, we find the width of the density of states σ=0.115 eV and the lattice constant a=1.2 nm. Furthermore, we show that the boundary carrier density has an important effect on the current density versus voltage characteristics. Too large or too small values of the boundary carrier density lead to incorrect current density versus voltage characteristics. The numerically calculated carrier density is a decreasing function of distance from the interface. The numerically calculated electric field is an increasing function of distance. Both the maximum of carrier density and minimum of electric field appear near the interface.
-
Production of chemical energy carriers by non-expendable energy sources
Energy Technology Data Exchange (ETDEWEB)
Nitsch, J
1976-01-01
The different forms of energy (radiation, high-temperature heat and electricity) arising from non-expendable energy sources like solar energy can be used for the production of chemical energy-carriers. Possible methods are the splitting of water by means of photolysis, thermochemical cycles and electrolysis, as well as the storage of energy in closed loop chemical systems. These methods are described and efficiencies and costs of the production of these energy carriers are specified. Special problems of the long-distance transportation of hydrogen produced by solar energy are described and the resulting costs are estimated.
-
Valley development on Hawaiian volcanoes
International Nuclear Information System (INIS)
Baker, V.R.; Gulick, V.C.
1987-01-01
Work in progress on Hawaiian drainage evolution indicates an important potential for understanding drainage development on Mars. Similar to Mars, the Hawaiian valleys were initiated by surface runoff, subsequently enlarged by groundwater sapping, and eventually stabilized as aquifers were depleted. Quantitative geomorphic measurements were used to evaluate the following factors in Hawaiian drainage evolution: climate, stream processes, and time. In comparing regions of similar climate, drainage density shows a general increase with the age of the volcani island. With age and climate held constant, sapping dominated valleys, in contrast to runoff-dominated valleys, display the following: lower drainage densities, higher ratios of valley floor width to valley height, and more positive profile concavities. Studies of stream junction angles indicate increasing junction angles with time on the drier leeward sides of the major islands. The quantitative geomorphic studies and earlier field work yielded important insights for Martian geomorphology. The importance of ash mantling in controlling infiltration on Hawaii also seems to apply to Mars. The Hawaiian valley also have implications for the valley networks of Martian heavily cratered terrains
-
Extracting hot carriers from photoexcited semiconductor nanocrystals
Energy Technology Data Exchange (ETDEWEB)
Zhu, Xiaoyang
2014-12-10
This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.
-
Plasmon-induced carrier polarization in semiconductor nanocrystals
Yin, Penghui; Tan, Yi; Fang, Hanbing; Hegde, Manu; Radovanovic, Pavle V.
2018-06-01
Spintronics1 and valleytronics2 are emerging quantum electronic technologies that rely on using electron spin and multiple extrema of the band structure (valleys), respectively, as additional degrees of freedom. There are also collective properties of electrons in semiconductor nanostructures that potentially could be exploited in multifunctional quantum devices. Specifically, plasmonic semiconductor nanocrystals3-10 offer an opportunity for interface-free coupling between a plasmon and an exciton. However, plasmon-exciton coupling in single-phase semiconductor nanocrystals remains challenging because confined plasmon oscillations are generally not resonant with excitonic transitions. Here, we demonstrate a robust electron polarization in degenerately doped In2O3 nanocrystals, enabled by non-resonant coupling of cyclotron magnetoplasmonic modes11 with the exciton at the Fermi level. Using magnetic circular dichroism spectroscopy, we show that intrinsic plasmon-exciton coupling allows for the indirect excitation of the magnetoplasmonic modes, and subsequent Zeeman splitting of the excitonic states. Splitting of the band states and selective carrier polarization can be manipulated further by spin-orbit coupling. Our results effectively open up the field of plasmontronics, which involves the phenomena that arise from intrinsic plasmon-exciton and plasmon-spin interactions. Furthermore, the dynamic control of carrier polarization is readily achieved at room temperature, which allows us to harness the magnetoplasmonic mode as a new degree of freedom in practical photonic, optoelectronic and quantum-information processing devices.
-
Zihlmann, Simon; Cummings, Aron W.; Garcia, Jose H.; Kedves, Máté; Watanabe, Kenji; Taniguchi, Takashi; Schönenberger, Christian; Makk, Péter
2018-02-01
Large spin-orbital proximity effects have been predicted in graphene interfaced with a transition-metal dichalcogenide layer. Whereas clear evidence for an enhanced spin-orbit coupling has been found at large carrier densities, the type of spin-orbit coupling and its relaxation mechanism remained unknown. We show an increased spin-orbit coupling close to the charge neutrality point in graphene, where topological states are expected to appear. Single-layer graphene encapsulated between the transition-metal dichalcogenide WSe2 and h -BN is found to exhibit exceptional quality with mobilities as high as 1 ×105 cm2 V-1 s-1. At the same time clear weak antilocalization indicates strong spin-orbit coupling, and a large spin relaxation anisotropy due to the presence of a dominating symmetric spin-orbit coupling is found. Doping-dependent measurements show that the spin relaxation of the in-plane spins is largely dominated by a valley-Zeeman spin-orbit coupling and that the intrinsic spin-orbit coupling plays a minor role in spin relaxation. The strong spin-valley coupling opens new possibilities in exploring spin and valley degree of freedom in graphene with the realization of new concepts in spin manipulation.
-
Current fluctuation of electron and hole carriers in multilayer WSe{sub 2} field effect transistors
Energy Technology Data Exchange (ETDEWEB)
Ko, Seung-Pil; Shin, Jong Mok; Jang, Ho-Kyun; Jin, Jun Eon; Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 02481 (Korea, Republic of); Kim, Yong Jin; Kim, Young Keun [Department of Materials Science and Engineering, Korea University, Seoul 02481 (Korea, Republic of); Shin, Minju [School of Electrical Engineering, Korea University, Seoul 02481 (Korea, Republic of); IMEP-LAHC, Grenoble INP-MINATEC, 3 Parvis Louis Neel, 38016 Grenoble (France)
2015-12-14
Two-dimensional materials have outstanding scalability due to their structural and electrical properties for the logic devices. Here, we report the current fluctuation in multilayer WSe{sub 2} field effect transistors (FETs). In order to demonstrate the impact on carrier types, n-type and p-type WSe{sub 2} FETs are fabricated with different work function metals. Each device has similar electrical characteristics except for the threshold voltage. In the low frequency noise analysis, drain current power spectral density (S{sub I}) is inversely proportional to frequency, indicating typical 1/f noise behaviors. The curves of the normalized drain current power spectral density (NS{sub I}) as a function of drain current at the 10 Hz of frequency indicate that our devices follow the carrier number fluctuation with correlated mobility fluctuation model. This means that current fluctuation depends on the trapping-detrapping motion of the charge carriers near the channel interface. No significant difference is observed in the current fluctuation according to the charge carrier type, electrons and holes that occurred in the junction and channel region.
-
Lee, Ji Eun; Cho, Sang-Hum; Oh, Min-Wook; Ryu, Byungi; Joo, Sung-Jae; Kim, Bong-Seo; Min, Bok-Ki; Lee, Hee-Woong; Park, Su-Dong
2014-07-01
The Bi-doped Mg2Si powder was fabricated with solid state reaction method and consolidated with hot pressing method and then its thermoelectric properties were investigated. The n-type transport properties were measured in all samples and temperature dependence of the electrical properties shows a behavior of degenerate semiconductors for Bi-doped samples. The electrical resistivity and the Seebeck coefficient were greatly reduced with Bi, which was mainly due to the increment of the carrier concentration. The samples have maximum carrier concentration of 8.2 × 1018 cm-3. The largest ZT value of 0.61 was achieve at 873 K for Mg2.04SiBi0.02. The Bi-doping was found to be an effective n-type dopant to adjust carrier concentration. [Figure not available: see fulltext.
-
Transmutor demo unit and thermal into electrical energy transformation problems
International Nuclear Information System (INIS)
Matal, O.; Fiedler, J.
1999-01-01
In the three circuits layout of the transmutor the heat is transferred from the primary through the secondary circuits by a favourable heat carrier into the tertiary circuit where the thermal into electrical energy transformation in turbo-generator comes into force. Properties as well as parameters of the heat carrier in the secondary circuit affect basically both the conceptual layout of the tertiary circuit and consequently investments costs for its realization and the effectiveness of the transformation of thermal into electrical energy. For several heat carriers considered for the transmutor secondary circuit particular tertiary circuit concepts for the demonstration transmutor unit of approx. 15 W thermal power rate are analyzed, layout features and possibilities of turbogenerator selection are commented and investment costs as well as effectiveness of thermal into electrical energy transformation are estimated. Some of the results are as follows: (i) Heat carrier properties influence thermodynamics of the TDU water/steam cycle substantially. One of the dominant parameters is the melting (freezing) temperature of the heat carrier. (ii) Heat carrier properties influence investment costs of components of the TDU tertiary circuit substantially. Dominantly influenced are costs of the steam generator, steam turbine and high pressure regeneration system. (iii) If the heat carrier has to be a molten salt than a salt with a low melting temperature is recommended to be selected, for example KHF2. (iv) Eutectic alloy Pb-Bi as the heat carrier serves changes to design the TDU with efficient thermodynamics, with acceptable low investment costs of the tertiary as well as secondary circuit components and with an acceptable level of the nuclear safety
-
Biomass-based energy carriers in the transportation sector
International Nuclear Information System (INIS)
Johansson, Bengt.
1995-03-01
The purpose of this report is to study the technical and economic prerequisites to attain reduced carbon dioxide emissions through the use of biomass-based energy carriers in the transportation sector, and to study other environmental impacts resulting from an increased use of biomass-based energy carriers. CO 2 emission reduction per unit arable and forest land used for biomass production (kg CO 2 /ha,year) and costs for CO 2 emission reduction (SEK/kg CO 2 ) are estimated for the substitution of gasoline and diesel with rape methyl ester, biogas from lucerne, ethanol from wheat and ethanol, methanol, hydrogen and electricity from Salix and logging residues. Of the studied energy carriers, those based on Salix provide the largest CO 2 emission reduction. In a medium long perspective, the costs for CO 2 emission reduction seem to be lowest for methanol from Salix and logging residues. The use of fuel cell vehicles, using methanol or hydrogen as energy carriers, can in a longer perspective provide more energy efficient utilization of biomass for transportation than the use of internal combustion engine vehicles. 136 refs, 12 figs, 25 tabs
-
Iwamoto, Mitsumasa; Manaka, Takaaki; Taguchi, Dai
2015-09-01
The probing and modeling of carrier motions in materials as well as in electronic devices is a fundamental research subject in science and electronics. According to the Maxwell electromagnetic field theory, carriers are a source of electric field. Therefore, by probing the dielectric polarization caused by the electric field arising from moving carriers and dipoles, we can find a way to visualize the carrier motions in materials and in devices. The techniques used here are an electrical Maxwell-displacement current (MDC) measurement and a novel optical method based on the electric field induced optical second harmonic generation (EFISHG) measurement. The MDC measurement probes changes of induced charge on electrodes, while the EFISHG probes nonlinear polarization induced in organic active layers due to the coupling of electron clouds of molecules and electro-magnetic waves of an incident laser beam in the presence of a DC field caused by electrons and holes. Both measurements allow us to probe dynamical carrier motions in solids through the detection of dielectric polarization phenomena originated from dipolar motions and electron transport. In this topical review, on the basis of Maxwell’s electro-magnetism theory of 1873, which stems from Faraday’s idea, the concept for probing electron and hole transport in solids by using the EFISHG is discussed in comparison with the conventional time of flight (TOF) measurement. We then visualize carrier transit in organic devices, i.e. organic field effect transistors, organic light emitting diodes, organic solar cells, and others. We also show that visualizing an EFISHG microscopic image is a novel way for characterizing anisotropic carrier transport in organic thin films. We also discuss the concept of the detection of rotational dipolar motions in monolayers by means of the MDC measurement, which is capable of probing the change of dielectric spontaneous polarization formed by dipoles in organic monolayers. Finally we
-
DEFF Research Database (Denmark)
Tarekegne, Abebe Tilahun; Iwaszczuk, Krzysztof; Hirori, Hideki
2017-01-01
Summary form only given. Metallic antenna arrays fabricated on high resistivity silicon are used to localize and enhance the incident THz field resulting in high electric field pulses with peak electric field strength reaching several MV/cm on the silicon surface near the antenna tips. In such high...... electric field strengths high density of carriers are generated in silicon through impact ionization process. The high density of generated carriers induces a change of refractive index in silicon. By measuring the change of reflectivity of tightly focused 800 nm light, the local density of free carriers...... near the antenna tips is measured. Using the NIR probing technique, we observed that the density of carriers increases by over 8 orders of magnitude in a time duration of approximately 500 fs with an incident THz pulse of peak electric field strength 700 kV/cm. This shows that a single impact...
-
Draft environmental impact statement - BPA/Lower Valley transmission project
International Nuclear Information System (INIS)
1997-06-01
Bonneville Power Administration and Lower Valley Power and Light, Inc., propose to solve a voltage stability problem in the Jackson and Afton, Wyoming areas. For the Agency Proposed Action, BPA and Lower Valley would construct a new 115-kV line from BPA's Swan Valley Substation near Swan Valley in Bonneville County, Idaho about 58 km (36 miles) east to BPA's Teton Substation near Jackson in Teton County, Wyoming. The new line would be next to an existing 115-kV line. Most of the line would be supported by a mix of single-circuit wood pole H-frame structures would be used. The Single-Circuit Line Alternative has all the components of the Agency Proposed Action except that the entire line would be supported by single-circuit structures. The Short Line Alternative has all the components of the Single-Circuit Line Alternative except it would then be removed. For the Static Var Compensation Alternative, BPA would install a Static Var Compensator (SVC) at Teton or Jackson Substation. An SVC is a group of electrical equipment placed at a substation to help control voltage on a transmission system. The No Action Alternative assumes that no new transmission line is built, and no other equipment is added to the transmission system. The USFS (Targhee and Bridger-Teton National Forests) must select al alternative based on their needs and objectives, decide if the project complies with currently approved forest plans, decide if special use permits or easements are needed for construction, operation, and maintenance of project facilities, and decide if they would issue special use permits and letters of consent to grant easements for the project
-
Analysis of Mining-induced Valley Closure Movements
Zhang, C.; Mitra, R.; Oh, J.; Hebblewhite, B.
2016-05-01
Valley closure movements have been observed for decades in Australia and overseas when underground mining occurred beneath or in close proximity to valleys and other forms of irregular topographies. Valley closure is defined as the inward movements of the valley sides towards the valley centreline. Due to the complexity of the local geology and the interplay between several geological, topographical and mining factors, the underlying mechanisms that actually cause this behaviour are not completely understood. A comprehensive programme of numerical modelling investigations has been carried out to further evaluate and quantify the influence of a number of these mining and geological factors and their inter-relationships. The factors investigated in this paper include longwall positional factors, horizontal stress, panel width, depth of cover and geological structures around the valley. It is found that mining in a series passing beneath the valley dramatically increases valley closure, and mining parallel to valley induces much more closure than other mining orientations. The redistribution of horizontal stress and influence of mining activity have also been recognised as important factors promoting valley closure, and the effect of geological structure around the valley is found to be relatively small. This paper provides further insight into both the valley closure mechanisms and how these mechanisms should be considered in valley closure prediction models.
-
Terahertz transport dynamics of graphene charge carriers
DEFF Research Database (Denmark)
Buron, Jonas Christian Due
The electronic transport dynamics of graphene charge carriers at femtosecond (10-15 s) to picosecond (10-12 s) time scales are investigated using terahertz (1012 Hz) time-domain spectroscopy (THz-TDS). The technique uses sub-picosecond pulses of electromagnetic radiation to gauge the electrodynamic...... response of thin conducting films at up to multi-terahertz frequencies. In this thesis THz-TDS is applied towards two main goals; (1) investigation of the fundamental carrier transport dynamics in graphene at femtosecond to picosecond timescales and (2) application of terahertz time-domain spectroscopy...... to rapid and non-contact electrical characterization of large-area graphene, relevant for industrial integration. We show that THz-TDS is an accurate and reliable probe of graphene sheet conductance, and that the technique provides insight into fundamental aspects of the nanoscopic nature of conduction...
-
International Nuclear Information System (INIS)
Rosen, Marc A.; Koohi-Fayegh, Seama
2016-01-01
Hydrogen is expected to play a key role as an energy carrier in future energy systems of the world. As fossil-fuel supplies become scarcer and environmental concerns increase, hydrogen is likely to become an increasingly important chemical energy carrier and eventually may become the principal chemical energy carrier. When most of the world's energy sources become non-fossil based, hydrogen and electricity are expected to be the two dominant energy carriers for the provision of end-use services. In such a ''hydrogen economy,'' the two complementary energy carriers, hydrogen and electricity, are used to satisfy most of the requirements of energy consumers. A transition era will bridge the gap between today's fossil-fuel economy and a hydrogen economy, in which non-fossil-derived hydrogen will be used to extend the lifetime of the world's fossil fuels - by upgrading heavy oils, for instance - and the infrastructure needed to support a hydrogen economy is gradually developed. In this paper, the role of hydrogen as an energy carrier and hydrogen energy systems' technologies and their economics are described. Also, the social and political implications of hydrogen energy are examined, and the questions of when and where hydrogen is likely to become important are addressed. Examples are provided to illustrate key points. (orig.)
-
Energy Technology Data Exchange (ETDEWEB)
Limpert, Steven; Ghosh, Kunal; Wagner, Hannes; Bowden, Stuart; Honsberg, Christiana; Goodnick, Stephen; Bremner, Stephen; Green, Martin
2014-06-09
We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell. Detailed analyses of current and voltage performance are presented for devices having substrate thicknesses of 10 μm, 50 μm, 100 μm and 150 μm, and with GaP/Si interfacial quality ranging from very poor to excellent. Ultimate potential performance was investigated using optical absorption profiles consistent with light trapping schemes of random pyramids with attached and detached rear reflector, and planar with an attached rear reflector. Results indicate Auger-limited open-circuit voltages up to 787 mV and efficiencies up to 26.7% may be possible for front-contacted devices.
-
Montelongo-Reyes, M M; Otazo-Sánchez, E M; Romo-Gómez, C; Gordillo-Martínez, A J; Galindo-Castillo, E
2015-09-15
The greenhouse gases and black carbon emission inventory from IPCC key category Energy was accomplished for the Mezquital Valley, one of the most polluted regions in Mexico, as the Mexico City wastewater have been continuously used in agricultural irrigation for more than a hundred years. In addition, thermoelectric, refinery, cement and chemistry industries are concentrated in the southern part of the valley, near Mexico City. Several studies have reported air, soil, and water pollution data and its main sources for the region. Paradoxically, these sources contaminate the valley, but boosted its economic development. Nevertheless, no research has been done concerning GHG emissions, or climate change assessment. This paper reports inventories performed by the 1996 IPCC methodology for the baseline year 2005. Fuel consumption data were derived from priority sectors such as electricity generation, refineries, manufacturing & cement industries, transportation, and residential use. The total CO2 emission result was 13,894.9 Gg, which constituted three-quarters of Hidalgo statewide energy category. The principal CO2 sources were energy transformation (69%) and manufacturing (19%). Total black carbon emissions were estimated by a bottom-up method at 0.66 Gg. The principal contributor was on-road transportation (37%), followed by firewood residential consumption (26%) and cocked brick manufactures (22%). Non-CO2 gas emissions were also significant, particularly SO2 (255.9 Gg), which accounts for 80% of the whole Hidalgo State emissions. Results demonstrated the negative environmental impact on Mezquital Valley, caused by its role as a Megacity secondary fuel and electricity provider, as well as by the presence of several cement industries. Copyright © 2015 Elsevier B.V. All rights reserved.
-
Dual-gate operation and carrier transport in SiGe p-n junction nanowires
Delker, C. J.; Yoo, J. Y.; Bussmann, E.; Swartzentruber, B. S.; Harris, C. T.
2017-11-01
We investigate carrier transport in silicon-germanium nanowires with an axial p-n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source-drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source-drain configuration, current is limited by the nickel/n-side Schottky contact.
-
Energy Technology Data Exchange (ETDEWEB)
1976-01-01
Detailed specifications which must be complied with in the construction of the ERDA Test Facilities at the East Mesa Site for geothermal resource investigations in Imperial Valley, California are presented for use by prospective bidders for the construction contract. The principle construction work includes a 700 gpm cooling tower with its associated supports and equipment, pipelines from wells, electrical equipment, and all earthwork. (LCL)
-
Energy Technology Data Exchange (ETDEWEB)
Anon.
2009-01-15
Especially when it comes to special solutions for specific applications, this will show how well man and machine are working together. In a production plant of Michelin Reifenwerke at Bad Kreuznach, Carrier installed two absorption refrigerators, in cooperation with further specialist partners. Instead of electric power, the machines utilize waste heat of the production process. (orig.)
-
Valley polarized quantum Hall effect and topological insulator phase transitions in silicene
Tahir, M.
2013-01-25
The electronic properties of silicene are distinct from both the conventional two dimensional electron gas and the famous graphene due to strong spin orbit interaction and the buckled structure. Silicene has the potential to overcome limitations encountered for graphene, in particular the zero band gap and weak spin orbit interaction. We demonstrate a valley polarized quantum Hall effect and topological insulator phase transitions. We use the Kubo formalism to discuss the Hall conductivity and address the longitudinal conductivity for elastic impurity scattering in the first Born approximation. We show that the combination of an electric field with intrinsic spin orbit interaction leads to quantum phase transitions at the charge neutrality point, providing a tool to experimentally tune the topological state. Silicene constitutes a model system for exploring the spin and valley physics not accessible in graphene due to the small spin orbit interaction.
-
West Valley high-level nuclear waste glass development: a statistically designed mixture study
Energy Technology Data Exchange (ETDEWEB)
Chick, L.A.; Bowen, W.M.; Lokken, R.O.; Wald, J.W.; Bunnell, L.R.; Strachan, D.M.
1984-10-01
The first full-scale conversion of high-level commercial nuclear wastes to glass in the United States will be conducted at West Valley, New York, by West Valley Nuclear Services Company, Inc. (WVNS), for the US Department of Energy. Pacific Northwest Laboratory (PNL) is supporting WVNS in the design of the glass-making process and the chemical formulation of the glass. This report describes the statistically designed study performed by PNL to develop the glass composition recommended for use at West Valley. The recommended glass contains 28 wt% waste, as limited by process requirements. The waste loading and the silica content (45 wt%) are similar to those in previously developed waste glasses; however, the new formulation contains more calcium and less boron. A series of tests verified that the increased calcium results in improved chemical durability and does not adversely affect the other modeled properties. The optimization study assessed the effects of seven oxide components on glass properties. Over 100 melts combining the seven components into a wide variety of statistically chosen compositions were tested. Viscosity, electrical conductivity, thermal expansion, crystallinity, and chemical durability were measured and empirically modeled as a function of the glass composition. The mathematical models were then used to predict the optimum formulation. This glass was tested and adjusted to arrive at the final composition recommended for use at West Valley. 56 references, 49 figures, 18 tables.
-
Field-Induced Superconductivity in Electric Double Layer Transistors
Ueno, Kazunori; Shimotani, Hidekazu; Yuan, Hongtao; Ye, Jianting; Kawasaki, Masashi; Iwasa, Yoshihiro
Electric field tuning of superconductivity has been a long-standing issue in solid state physics since the invention of the field-effect transistor (FET) in 1960. Owing to limited available carrier density in conventional FET devices, electric-field-induced superconductivity was believed to be
-
Audiomagnetotelluric investigation of Snake Valley, eastern Nevada and western Utah
McPhee, Darcy K.; Pari, Keith; Baird, Frank
2009-01-01
Audiomagnetotelluric (AMT) data along four profiles in western Snake Valley and the corresponding two-dimensional (2-D) inverse models reveal subsurface structures that may be significant to ground-water investigations in the area. The AMT method is a valuable tool for estimating the electrical resistivity of the earth over depth ranges from a few meters to less than one kilometer. The method has the potential to identify faults and stratigraphy within basins of eastern Nevada, thereby helping define the hydrogeologic framework of the region.
-
Charge carrier mobility in thin films of organic semiconductors by the gated van der Pauw method
Rolin, Cedric; Kang, Enpu; Lee, Jeong-Hwan; Borghs, Gustaaf; Heremans, Paul; Genoe, Jan
2017-01-01
Thin film transistors based on high-mobility organic semiconductors are prone to contact problems that complicate the interpretation of their electrical characteristics and the extraction of important material parameters such as the charge carrier mobility. Here we report on the gated van der Pauw method for the simple and accurate determination of the electrical characteristics of thin semiconducting films, independently from contact effects. We test our method on thin films of seven high-mobility organic semiconductors of both polarities: device fabrication is fully compatible with common transistor process flows and device measurements deliver consistent and precise values for the charge carrier mobility and threshold voltage in the high-charge carrier density regime that is representative of transistor operation. The gated van der Pauw method is broadly applicable to thin films of semiconductors and enables a simple and clean parameter extraction independent from contact effects. PMID:28397852
-
Yao, Kaiyuan; Yan, Aiming; Kahn, Salman; Suslu, Aslihan; Liang, Yufeng; Barnard, Edward S; Tongay, Sefaattin; Zettl, Alex; Borys, Nicholas J; Schuck, P James
2017-08-25
Optoelectronic excitations in monolayer MoS_{2} manifest from a hierarchy of electrically tunable, Coulombic free-carrier and excitonic many-body phenomena. Investigating the fundamental interactions underpinning these phenomena-critical to both many-body physics exploration and device applications-presents challenges, however, due to a complex balance of competing optoelectronic effects and interdependent properties. Here, optical detection of bound- and free-carrier photoexcitations is used to directly quantify carrier-induced changes of the quasiparticle band gap and exciton binding energies. The results explicitly disentangle the competing effects and highlight longstanding theoretical predictions of large carrier-induced band gap and exciton renormalization in two-dimensional semiconductors.
-
Yao, Kaiyuan; Yan, Aiming; Kahn, Salman; Suslu, Aslihan; Liang, Yufeng; Barnard, Edward S.; Tongay, Sefaattin; Zettl, Alex; Borys, Nicholas J.; Schuck, P. James
2017-08-01
Optoelectronic excitations in monolayer MoS2 manifest from a hierarchy of electrically tunable, Coulombic free-carrier and excitonic many-body phenomena. Investigating the fundamental interactions underpinning these phenomena—critical to both many-body physics exploration and device applications—presents challenges, however, due to a complex balance of competing optoelectronic effects and interdependent properties. Here, optical detection of bound- and free-carrier photoexcitations is used to directly quantify carrier-induced changes of the quasiparticle band gap and exciton binding energies. The results explicitly disentangle the competing effects and highlight longstanding theoretical predictions of large carrier-induced band gap and exciton renormalization in two-dimensional semiconductors.
-
Energy Technology Data Exchange (ETDEWEB)
Rosen, Marc A.; Koohi-Fayegh, Seama [Ontario Univ., Oshawa, ON (Canada). Inst. of Technology
2016-02-15
Hydrogen is expected to play a key role as an energy carrier in future energy systems of the world. As fossil-fuel supplies become scarcer and environmental concerns increase, hydrogen is likely to become an increasingly important chemical energy carrier and eventually may become the principal chemical energy carrier. When most of the world's energy sources become non-fossil based, hydrogen and electricity are expected to be the two dominant energy carriers for the provision of end-use services. In such a ''hydrogen economy,'' the two complementary energy carriers, hydrogen and electricity, are used to satisfy most of the requirements of energy consumers. A transition era will bridge the gap between today's fossil-fuel economy and a hydrogen economy, in which non-fossil-derived hydrogen will be used to extend the lifetime of the world's fossil fuels - by upgrading heavy oils, for instance - and the infrastructure needed to support a hydrogen economy is gradually developed. In this paper, the role of hydrogen as an energy carrier and hydrogen energy systems' technologies and their economics are described. Also, the social and political implications of hydrogen energy are examined, and the questions of when and where hydrogen is likely to become important are addressed. Examples are provided to illustrate key points. (orig.)
-
David E. Nagel; John M. Buffington; Sharon L. Parkes; Seth Wenger; Jaime R. Goode
2014-01-01
Valley confinement is an important landscape characteristic linked to aquatic habitat, riparian diversity, and geomorphic processes. This report describes a GIS program called the Valley Confinement Algorithm (VCA), which identifies unconfined valleys in montane landscapes. The algorithm uses nationally available digital elevation models (DEMs) at 10-30 m resolution to...
-
Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction
Wu, Haiyan; Ma, Ziguang; Jiang, Yang; Wang, Lu; Yang, Haojun; Li, Yangfeng; Zuo, Peng; Jia, Haiqiang; Wang, Wenxin; Zhou, Junming; Liu, Wuming; Chen, Hong
2016-11-01
A new mechanism of light-to-electricity conversion that uses InGaN/GaN QWs with a p-n junction is reported. According to the well established light-to-electricity conversion theory, quantum wells (QWs) cannot be used in solar cells and photodetectors because the photogenerated carriers in QWs usually relax to ground energy levels, owing to quantum confinement, and cannot form a photocurrent. We observe directly that more than 95% of the photoexcited carriers escape from InGaN/GaN QWs to generate a photocurrent, indicating that the thermionic emission and tunneling processes proposed previously cannot explain carriers escaping from QWs. We show that photoexcited carriers can escape directly from the QWs when the device is under working conditions. Our finding challenges the current theory and demonstrates a new prospect for developing highly efficient solar cells and photodetectors. Project supported by the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, and 11374340) and the Innovative Clean-energy Research and Application Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515001).
-
Hall mobility of free charge carriers in highly compensated p-Germanium
International Nuclear Information System (INIS)
Gavrilyuk, V.Yi.; Kirnas, Yi.G.; Balakyin, V.D.
2000-01-01
Hall mobility of free charge carriers in initial detectors Ge (Ga) is studied. It is established that an increase in the compensation factor results in the enlargement of Hall mobility in germanium highly compensated by introduction of Li ions during their drift in an electrical field
-
Small martian valleys: Pristine and degraded morphology
International Nuclear Information System (INIS)
Baker, V.R.; Partridge, J.B.
1986-01-01
The equatorial heavily cratered uplands of Mars are dissected by two classes of small valleys that are intimately associated in compound networks. Pristine valleys with steep valley walls preferentially occupy downstream portions of compound basins. Degraded valleys with eroded walls are laterally more extensive and have higher drainage densities than pristine valleys. Morphometric and crater-counting studies indicate that relatively dense drainage networks were emplaced on Mars during the heavy bombardment about 4.0 b.y. ago. Over a period of approximately 10 8 years, these networks were degraded and subsequently invaded by headwardly extending pristine valleys. The pristine valleys locally reactivated the compound networks, probably through sapping processes dependent upon high water tables. Fluvial activity in the heavily cratered uplands generally ceased approximately 3.8--3.9 b.y. ago, coincident with the rapid decline in cratering rates. The relict compound valleys on Mars are morphometrically distinct from most terrestrial drainage systems. The differences might be caused by a Martian valley formation episode characterized by hyperaridity, by inadequate time for network growth, by very permeable rock types, or by a combination of factors
-
Interface inductive currents and carrier injection in hybrid perovskite single crystals
Kovalenko, Alexander; Pospisil, Jan; Krajcovic, Jozef; Weiter, Martin; Guerrero, Antonio; Garcia-Belmonte, Germà
2017-10-01
Interfaces between the absorbing perovskite and transporting layers are gaining attention as the key locus that governs solar cell operation and long term performance. The interplay of ionic and electronic processes, along with the asymmetrical architecture of any solar cell, makes the interpretation of electrical measurements always inconclusive. A strategy to progress in relating electric responses, operating mechanisms, and device architecture relies upon simplifying the probing structure. Macroscopic CH3NH3PbBr3 single crystals with symmetrical contacts are tested by means of long-time current transient and impedance spectroscopy. It is observed that interfaces govern carrier injection to (and extraction from) perovskite layers through an inductive (negative capacitance) mechanism with a response time in the range of ˜ 1 - 100 s under dark conditions and inert atmosphere. Current transient exhibits a slow recovering after the occurrence of an undershoot, signaling a complex carrier dynamics which involves changes in surface state occupancy.
-
Reversible electron–hole separation in a hot carrier solar cell
International Nuclear Information System (INIS)
Limpert, S; Bremner, S; Linke, H
2015-01-01
Hot-carrier solar cells are envisioned to utilize energy filtering to extract power from photogenerated electron–hole pairs before they thermalize with the lattice, and thus potentially offer higher power conversion efficiency compared to conventional, single absorber solar cells. The efficiency of hot-carrier solar cells can be expected to strongly depend on the details of the energy filtering process, a relationship which to date has not been satisfactorily explored. Here, we establish the conditions under which electron–hole separation in hot-carrier solar cells can occur reversibly, that is, at maximum energy conversion efficiency. We thus focus our analysis on the internal operation of the hot-carrier solar cell itself, and in this work do not consider the photon-mediated coupling to the Sun. After deriving an expression for the voltage of a hot-carrier solar cell valid under conditions of both reversible and irreversible electrical operation, we identify separate contributions to the voltage from the thermoelectric effect and the photovoltaic effect. We find that, under specific conditions, the energy conversion efficiency of a hot-carrier solar cell can exceed the Carnot limit set by the intra-device temperature gradient alone, due to the additional contribution of the quasi-Fermi level splitting in the absorber. We also establish that the open-circuit voltage of a hot-carrier solar cell is not limited by the band gap of the absorber, due to the additional thermoelectric contribution to the voltage. Additionally, we find that a hot-carrier solar cell can be operated in reverse as a thermally driven solid-state light emitter. Our results help explore the fundamental limitations of hot-carrier solar cells, and provide a first step towards providing experimentalists with a guide to the optimal configuration of devices. (paper)
-
International Nuclear Information System (INIS)
Schaer, D.W.
1981-07-01
The Owens Valley Drilling Project consists of eight drill holes located in southwest Inyo County, California, having an aggregate depth of 19,205 feet (5853 m). Project holes penetrated the Coso Formation of upper Pliocene or early Pleistocene age and the Owens Lake sand and lakebed units of the same age. The project objective was to improve the reliability of uranium-potential-resource estimates assigned to the Coso Formation in the Owens Valley region. Uranium-potential-resource estimates for this area in $100 per pound U 3 O 8 forward-cost-category material have been estimatd to be 16,954 tons (15,384 metric tons). This estimate is based partly on project drilling results. Within the Owens Valley project area, the Coso Formation was encountered only in the Rose Valley region, and for this reason Rose Valley is considered to be the only portion of the project area favorable for economically sized uranium deposits. The sequence of sediments contained in the Owens Valley basin is considered to be largely equivalent but lithologically dissimilar to the Coso Formation of Haiwee Ridge and Rose Valley. The most important factor in the concentration of significant amounts of uranium in the rock units investigated appears to be the availability of reducing agents. Significant amounts of reductants (pyrite) were found in the Coso Formation. No organic debris was noted. Many small, disconnected uranium occurrences, 100 to 500 ppM U 3 O 8 , were encountered in several of the holes
-
Valley dependent transport in graphene L junction
Chan, K. S.
2018-05-01
We studied the valley dependent transport in graphene L junctions connecting an armchair lead and a zigzag lead. The junction can be used in valleytronic devices and circuits. Electrons injected from the armchair lead into the junction is not valley polarized, but they can become valley polarized in the zigzag lead. There are Fermi energies, where the current in the zigzag lead is highly valley polarized and the junction is an efficient generator of valley polarized current. The features of the valley polarized current depend sensitively on the widths of the two leads, as well as the number of dimers in the armchair lead, because this number has a sensitive effect on the band structure of the armchair lead. When an external potential is applied to the junction, the energy range with high valley polarization is enlarged enhancing its function as a generator of highly valley polarized current. The scaling behavior found in other graphene devices is also found in L junctions, which means that the results presented here can be extended to junctions with larger dimensions after appropriate scaling of the energy.
-
Photochromic systems as models for opto-electrical switches
Czech Academy of Sciences Publication Activity Database
Lutsyk, P.; Sworakowski, J.; Janus, K.; Nešpůrek, Stanislav; Kochalska, Anna
2010-01-01
Roč. 522, - (2010), s. 511-528 ISSN 1542-1406 R&D Projects: GA AV ČR KAN401770651 Institutional research plan: CEZ:AV0Z40500505 Keywords : charge carrier transport * molecular material * opto-electrical switch Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.543, year: 2010
-
Carrier mobilities in microcrystalline silicon films
International Nuclear Information System (INIS)
Bronger, T.; Carius, R.
2007-01-01
For a better understanding of electronic transport mechanisms in thin-film silicon solar cell quality films, we have investigated the Hall mobility for electrons in microcrystalline/amorphous silicon over a range of crystallinities and doping concentrations. We find that Hall mobility increases with increasing doping concentration in accordance with earlier measurements. With increasing amorphous fraction, the measured mobility decreases suggesting a negative influence of the additional disorder. The results suggest a differential mobility model in which mobility depends on the energy level of the carriers that contribute to the electrical current
-
Christmas Valley Renewable Energy Assessment
Energy Technology Data Exchange (ETDEWEB)
Del Mar, Robert [Oregon Department of Energy, Salem, OR (United States)
2017-05-22
In partnership with the Oregon Military Department, the Department of Energy used the award to assess and evaluate renewable resources in a 2,622-acre location in Lake County, central Oregon, leading to future development of up to 200 MW of solar electricity. In partnership with the Oregon Military Department, the Department of Energy used the award to assess and evaluate renewable resources in a 2,622-acre location in Lake County, central Oregon, leading to future development of up to 200 MW of solar electricity. The Oregon Military Department (Military) acquired a large parcel of land located in south central Oregon. The land was previously owned by the US Air Force and developed for an Over-the-Horizon Backscatter Radar Transmitter Facility, located about 10 miles east of the town of Christmas Valley. The Military is investigating a number of uses for the site, including Research and Development (R&D) laboratory, emergency response, military operations, developing renewable energy and related educational programs. One of the key potential uses would be for a large scale solar photovoltaic power plant. This is an attractive use because the site has excellent solar exposure; an existing strong electrical interconnection to the power grid; and a secure location at a moderate cost per acre. The project objectives include: 1. Site evaluation 2. Research and Development (R&D) facility analysis 3. Utility interconnection studies and agreements 4. Additional on-site renewable energy resources analysis 5. Community education, outreach and mitigation 6. Renewable energy and emergency readiness training program for veterans
-
Magnetocapacitance of an electrically tunable silicene device
Tahir, M.
2012-09-26
Despite their structural similarity, the electronic properties of silicene are fundamentally different from those of well-known graphene due to the strong intrinsic spin orbit interaction and buckled structure of silicene. We address the magnetocapacitance of spin and valley polarized silicene in an external perpendicular magnetic field to clarify the interplay of the spin orbit interaction and the perpendicular electric field. We find that the band gap is electrically tunable and show that the magnetocapacitance exhibits beating at low and splitting of the Shubnikov de Haas oscillations at high magnetic field.
-
Magnetocapacitance of an electrically tunable silicene device
Tahir, M.; Schwingenschlö gl, Udo
2012-01-01
Despite their structural similarity, the electronic properties of silicene are fundamentally different from those of well-known graphene due to the strong intrinsic spin orbit interaction and buckled structure of silicene. We address the magnetocapacitance of spin and valley polarized silicene in an external perpendicular magnetic field to clarify the interplay of the spin orbit interaction and the perpendicular electric field. We find that the band gap is electrically tunable and show that the magnetocapacitance exhibits beating at low and splitting of the Shubnikov de Haas oscillations at high magnetic field.
-
Hydrogen and Biofuels - A Modeling Analysis of Competing Energy Carriers for Western Europe
Energy Technology Data Exchange (ETDEWEB)
Guel, Timur; Kypreos, Socrates; Barreto, Leonardo
2007-07-01
This paper deals with the prospects of hydrogen and biofuels as energy carriers in the Western European transportation sector. The assessment is done by combining the US hydrogen analysis H2A models for the design of hydrogen production and delivery chains, and the Western European Hydrogen Markal Model EHM with a detailed representation of biofuels, and the European electricity and transportation sector. The paper derives policy recommendations to support the market penetration of hydrogen and biofuels, and investigates learning interactions between the different energy carriers. (auth)
-
Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient
International Nuclear Information System (INIS)
Murthy, D H K; Houtepen, A J; Savenije, T J; Siebbeles, L D A; Xu, T; Nys, J P; Krzeminski, C; Grandidier, B; Stievenard, D; Chen, W H; Pareige, P; Jomard, F; Patriarche, G; Lebedev, O I
2011-01-01
by performing electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and the decay kinetics on photoexcitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. Large enhancements in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities during the growth. They are explained by the internal electric field that builds up, due to higher doped sidewalls, as revealed by detailed analysis of the nanowire morphology and chemical composition.
-
Directory of Open Access Journals (Sweden)
Lin Xing Shi
2018-02-01
Full Text Available Charge carrier recombination in the perovskite solar cells (PSCs has a deep influence on the electrical performance, such as open circuit voltage, short circuit current, fill factor and ultimately power conversion efficiency. The impacts of injection barrier, recombination channels, doping properties of carrier transport layers and light intensity on the performance of PSCs are theoretically investigated by drift-diffusion model in this work. The results indicate that due to the injection barrier at the interfaces of perovskite and carrier transport layer, the accumulated carriers modify the electric field distribution throughout the PSCs. Thus, a zero electric field is generated at a specific applied voltage, with greatly increases the interfacial recombination, resulting in a local kink of current density-voltage (J-V curve. This work provides an effective strategy to improve the efficiency of PSCs by pertinently reducing both the injection barrier and interfacial recombination.
-
Energy Technology Data Exchange (ETDEWEB)
Martin, Mark A. [Bonneville Power Administration (BPA), Portland, OR (United States)
2002-04-15
Vegetation Management along the Rocky Reach – Maple Valley No. 1 Transmission Line ROW from structure 110/1 to the Maple Valley Substation. The transmission line is a 500 kV line. BPA proposes to clear targeted vegetation along access roads and around tower structures that may impede the operation and maintenance of the subject transmission line. BPA plans to conduct vegetation management along existing access road and around structure landings for the purpose of maintaining access to structures site. All work will be in accordance with the National Electrical Safety Code and BPA standards.
-
Schubert, Brian A.; Lowenstein, Tim K.; Timofeeff, Michael N.
2009-06-01
Primary fluid inclusions in halite crystallized in Saline Valley, California, in 1980, 2004-2005, and 2007, contain rod- and coccoid-shaped microparticles the same size and morphology as archaea and bacteria living in modern brines. Primary fluid inclusions from a well-dated (0-100,000 years), 90 m long salt core from Badwater Basin, Death Valley, California, also contain microparticles, here interpreted as halophilic and halotolerant prokaryotes. Prokaryotes are distinguished from crystals on the basis of morphology, optical properties (birefringence), and uniformity of size. Electron micrographs of microparticles from filtered modern brine (Saline Valley), dissolved modern halite crystals (Saline Valley), and dissolved ancient halite crystals (Death Valley) support in situ microscopic observations that prokaryotes are present in fluid inclusions in ancient halite. In the Death Valley salt core, prokaryotes in fluid inclusions occur almost exclusively in halite precipitated in perennial saline lakes 10,000 to 35,000 years ago. This suggests that trapping and preservation of prokaryotes in fluid inclusions is influenced by the surface environment in which the halite originally precipitated. In all cases, prokaryotes in fluid inclusions in halite from the Death Valley salt core are miniaturized (<1 μm diameter cocci, <2.5 μm long, very rare rod shapes), which supports interpretations that the prokaryotes are indigenous to the halite and starvation survival may be the normal response of some prokaryotes to entrapment in fluid inclusions for millennia. These results reinforce the view that fluid inclusions in halite and possibly other evaporites are important repositories of microbial life and should be carefully examined in the search for ancient microorganisms on Earth, Mars, and elsewhere in the Solar System.
-
High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer
Ko, Tsung-Shine; Lin, Der-Yuh; Lin, Chia-Feng; Chang, Che-Wei; Zhang, Jin-Cheng; Tu, Shang-Ju
2017-04-01
In this paper, we experimentally studied the effect of AlN spacer layer on optical and electrical properties of AlGaN/GaN high electric mobility transistors (HEMTs) grown by metal organic chemical vapor deposition method. For AlGaN layer in HEMT structure, the Al composition of the sample was determined using x-ray diffraction and photoluminescence. Electrolyte electro-reflectance (EER) measurement not only confirmed the aluminum composition of AlGaN layer, but also determined the electric field strength on the AlGaN layer through the Franz-Keldysh oscillation phenomenon. This result indicated that the electric field on the AlGaN layer could be improved from 430 to 621 kV/cm when AlN spacer layer was inserted in HEMT structure, which increased the concentration of two dimensional electron gas (2DEG) and improve the mobility. The temperature dependent Hall results show that both the mobility and the carrier concentration of 2DEG would decrease abruptly causing HEMT loss of function due to phonon scattering and carrier thermal escape when temperature increases above a specific value. Meanwhile, our study also demonstrates using AlN spacer layer could be beneficial to allow the mobility and carrier density of 2DEG sustaining at high temperature region.
-
Optimal Scheduling of Biogas-Solar-Wind Renewable Portfolio for Multi-Carrier Energy Supplies
DEFF Research Database (Denmark)
Zhou, Bin; Xu, Da; Li, Canbing
2018-01-01
the mitigation of renewable intermittency and the efficient utilization of batteries, and a multi-carrier generation scheduling scheme is further presented to dynamically optimize dispatch factors in the coupling matrix for energy-efficient con-version and storage, while different energy demands of end......This paper proposes a multi-source multi-product framework for coupled multi-carrier energy supplies with a biogas-solar-wind hybrid renewable system. In this framework, the biogas-solar-wind complementarities are fully exploited based on digesting thermodynamic effects for the synergetic...... interactions of electricity, gas and heating energy flows, and a coupling matrix is formulated for the modeling of production, conversion, storage, and consumption of different energy carriers. The multi-energy complementarity of biogas-solar-wind renewable portfolio can be utilized to facilitate...
-
Topological Valley Transport in Two-dimensional Honeycomb Photonic Crystals.
Yang, Yuting; Jiang, Hua; Hang, Zhi Hong
2018-01-25
Two-dimensional photonic crystals, in analogy to AB/BA stacking bilayer graphene in electronic system, are studied. Inequivalent valleys in the momentum space for photons can be manipulated by simply engineering diameters of cylinders in a honeycomb lattice. The inequivalent valleys in photonic crystal are selectively excited by a designed optical chiral source and bulk valley polarizations are visualized. Unidirectional valley interface states are proved to exist on a domain wall connecting two photonic crystals with different valley Chern numbers. With the similar optical vortex index, interface states can couple with bulk valley polarizations and thus valley filter and valley coupler can be designed. Our simple dielectric PC scheme can help to exploit the valley degree of freedom for future optical devices.
-
Graphene-based sample supports for in situ high-resolution TEM electrical investigations
International Nuclear Information System (INIS)
Westenfelder, B; Scholz, F; Meyer, J C; Biskupek, J; Algara-Siller, G; Lechner, L G; Kaiser, U; Kusterer, J; Kohn, E; Krill, C E III
2011-01-01
Specially designed transmission electron microscopy (TEM) sample carriers have been developed to enable atomically resolved studies of the heat-induced evolution of adsorbates on graphene and their influence on electrical conductivity. Here, we present a strategy for graphene-based carrier realization, evaluating its design with respect to fabrication effort and applications potential. We demonstrate that electrical current can lead to very high temperatures in suspended graphene membranes, and we determine that current-induced cleaning of graphene results from Joule heating.
-
Characterizing Drought Impacted Soils in the San Joaquin Valley of California Using Remote Sensing
Wahab, L. M.; Miller, D.; Roberts, D. A.
2017-12-01
California's San Joaquin Valley is an extremely agriculturally productive region of the country, and understanding the state of soils in this region is an important factor in maintaining this high productivity. In this study, we quantified changing soil cover during the drought and analyzed spatial changes in salinity, organic matter, and moisture using unique soil spectral characteristics. We used data from the Airborne Visible / Infrared Imaging Spectrometer (AVIRIS) from Hyperspectral Infrared Imager (HyspIRI) campaign flights in 2013 and 2014 over the San Joaquin Valley. A mixture model was applied to both images that identified non- photosynthetic vegetation, green vegetation, and soil cover fractions through image endmembers of each of these three classes. We optimized the spectral library used to identify these classes with Iterative Endmember Selection (IES), and the images were unmixed using Multiple Endmember Spectral Mixture Analysis (MESMA). Maps of soil electrical conductivity, organic matter, soil saturated moisture, and field moisture were generated for the San Joaquin Valley based on indices developed by Ben-Dor et al. [2002]. Representative polygons were chosen to quantify changes between years. Maps of spectrally distinct soils were also generated for 2013 and 2014, in order to determine the spatial distribution of these soil types as well as their temporal dynamics between years. We estimated that soil cover increased by 16% from 2013-2014. Six spectrally distinct soil types were identified for the region, and it was determined that the distribution of these soil types was not constant for most areas between 2013 and 2014. Changes in soil pH, electrical conductivity, and soil moisture were strongly tied in the region between 2013 and 2014.
-
Boccard, Mathieu; Battaglia, Corsin; Hänni, Simon; Söderström, Karin; Escarré, Jordi; Nicolay, Sylvain; Meillaud, Fanny; Despeisse, Matthieu; Ballif, Christophe
2012-03-14
The challenge for all photovoltaic technologies is to maximize light absorption, to convert photons with minimal losses into electric charges, and to efficiently extract them to the electrical circuit. For thin-film solar cells, all these tasks rely heavily on the transparent front electrode. Here we present a multiscale electrode architecture that allows us to achieve efficiencies as high as 14.1% with a thin-film silicon tandem solar cell employing only 3 μm of silicon. Our approach combines the versatility of nanoimprint lithography, the unusually high carrier mobility of hydrogenated indium oxide (over 100 cm(2)/V/s), and the unequaled light-scattering properties of self-textured zinc oxide. A multiscale texture provides light trapping over a broad wavelength range while ensuring an optimum morphology for the growth of high-quality silicon layers. A conductive bilayer stack guarantees carrier extraction while minimizing parasitic absorption losses. The tunability accessible through such multiscale electrode architecture offers unprecedented possibilities to address the trade-off between cell optical and electrical performance. © 2012 American Chemical Society
-
Mechanical control over valley magnetotransport in strained graphene
Energy Technology Data Exchange (ETDEWEB)
Ma, Ning, E-mail: maning@stu.xjtu.edu.cn [Department of Physics, MOE Key Laboratory of Advanced Transducers and Intelligent Control System, Taiyuan University of Technology, Taiyuan 030024 (China); Department of Applied Physics, MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Xi' an Jiaotong University, Xi' an 710049 (China); Zhang, Shengli, E-mail: zhangsl@mail.xjtu.edu.cn [Department of Applied Physics, MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Xi' an Jiaotong University, Xi' an 710049 (China); Liu, Daqing, E-mail: liudq@cczu.edu.cn [School of Mathematics and Physics, Changzhou University, Changzhou 213164 (China)
2016-05-06
Recent experiments report that the graphene exhibits Landau levels (LLs) that form in the presence of a uniform strain pseudomagnetic field with magnitudes up to hundreds of tesla. We further reveal that the strain removes the valley degeneracy in LLs, and leads to a significant valley polarization with inversion symmetry broken. This accordingly gives rise to the well separated valley Hall plateaus and Shubnikov–de Haas oscillations. These effects are absent in strainless graphene, and can be used to generate and detect valley polarization by mechanical means, forming the basis for the new paradigm “valleytronics” applications. - Highlights: • We explore the mechanical strain effects on the valley magnetotransport in graphene. • We analytically derive the dc collisional and Hall conductivities under strain. • The strain removes the valley degeneracy in Landau levels. • The strain causes a significant valley polarization with inversion symmetry broken. • The strain leads to the well separated valley Hall and Shubnikov–de Haas effects.
-
Competitive position of energy carriers in trade
Energy Technology Data Exchange (ETDEWEB)
Suding, P.H.; Forsbach, H.H.
Industrial consumers and public institutions, which are classed with the group of minor consumers, differ in their behaviour in energy consumption greatly from the structure of the whole group. Also the willingness to convert from fuel oil to natural gas in these trade groups is relatively high. Within the framework of 5 model enterprises, the profitability of energy carriers and economizing technology in trade is analysed. The model enterprises are a bakery, a meat purveyor, a restaurant, a laundry and a hospital. The basic data are compared with the data from 1985. The comparison shows that the competitive positions of energy carriers in business and public in the process heat sector here not changed dramatically. The competitiveness of natural gas has improved since 1985 through the changes in price. However, in the sectors in which it belongs to the group of economical alternatives (e.g. in the bakeries), electricity has not lost much ground. (BR)
-
Recovery Act: Novel Oxygen Carriers for Coal-fueled Chemical Looping
Energy Technology Data Exchange (ETDEWEB)
Pan, Wei-Ping; Cao, Yan
2012-11-30
Chemical Looping Combustion (CLC) could totally negate the necessity of pure oxygen by using oxygen carriers for purification of CO{sub 2} stream during combustion. It splits the single fuel combustion reaction into two linked reactions using oxygen carriers. The two linked reactions are the oxidation of oxygen carriers in the air reactor using air, and the reduction of oxygen carriers in the fuel reactor using fuels (i.e. coal). Generally metal/metal oxides are used as oxygen carriers and operated in a cyclic mode. Chemical looping combustion significantly improves the energy conversion efficiency, in terms of the electricity generation, because it improves the reversibility of the fuel combustion process through two linked parallel processes, compared to the conventional combustion process, which is operated far away from its thermo-equilibrium. Under the current carbon-constraint environment, it has been a promising carbon capture technology in terms of fuel combustion for power generation. Its disadvantage is that it is less mature in terms of technological commercialization. In this DOE-funded project, accomplishment is made by developing a series of advanced copper-based oxygen carriers, with properties of the higher oxygen-transfer capability, a favorable thermodynamics to generate high purity of CO{sub 2}, the higher reactivity, the attrition-resistance, the thermal stability in red-ox cycles and the achievement of the auto-thermal heat balance. This will be achieved into three phases in three consecutive years. The selected oxygen carriers with final-determined formula were tested in a scaled-up 10kW coal-fueled chemical looping combustion facility. This scaled-up evaluation tests (2-day, 8-hour per day) indicated that, there was no tendency of agglomeration of copper-based oxygen carriers. Only trace-amount of coke or carbon deposits on the copper-based oxygen carriers in the fuel reactor. There was also no evidence to show the sulphidization of oxygen
-
Alternative forms of energy transmission from OTEC plants. [Chemical and electrical
Energy Technology Data Exchange (ETDEWEB)
Konopka, A.; Biederman, N.; Talib, A.; Yudow, B.
1977-01-01
The transmission of OTEC-derived chemical and electrical energy is compared. The chemical energy-carriers considered are the following: gaseous and liquid hydrogen, liquid ammonia, methanol, gasoline, hydrazine hydrate, anhydrous hydrazine, unsymmetrical dimethylhydrazine (UDMH), 1,7-Octadiyne, and tetrahydrodicyclopentadiene. The assessment assumes that each of the above energy carriers were transported by barge and/or pipeline. The delivered costs were then compared with transmission of electricity by submarine cables. Because chemical and electrical energy are not equivalent, however, their comparison can only be done after the outputs are converted to a common form. Thus, in addition to presenting the delivered cost and overall energy efficiency of the chemical energy-carriers, we have provided a discussion of the equipment, costs, and efficiencies of converting the hydrogen and ammonia delivered into electricity, and the electricity delivered into hydrogen and ammonia. A concise technical assessment and economic analysis of components associated with the conversion, storage, transportation, and shore-based receiving facilities for the conversion of OTEC mechanical energy to chemical energy is provided and compared to the conversion and transmission of electrical power. Results concerning the hydrogen and ammonia analysis were determined as part of the OTEC program at IGT from May 1975 through May 1976 under Contract No. NSF-C1008 (AER-75-00033) with the National Science Foundation and ERDA. Information concerning carbonaceous fuels and high-energy fuels production was developed as part of the current IGT OTEC program under Contract No. E(49-18)-2426 with ERDA.
-
Johnston, Michael B; Herz, Laura M
2016-01-19
Photovoltaic (PV) devices that harvest the energy provided by the sun have great potential as renewable energy sources, yet uptake has been hampered by the increased cost of solar electricity compared with fossil fuels. Hybrid metal halide perovskites have recently emerged as low-cost active materials in PV cells with power conversion efficiencies now exceeding 20%. Rapid progress has been achieved over only a few years through improvements in materials processing and device design. In addition, hybrid perovskites appear to be good light emitters under certain conditions, raising the prospect of applications in low-cost light-emitting diodes and lasers. Further optimization of such hybrid perovskite devices now needs to be supported by a better understanding of how light is converted into electrical currents and vice versa. This Account provides an overview of charge-carrier recombination and mobility mechanisms encountered in such materials. Optical-pump-terahertz-probe (OPTP) photoconductivity spectroscopy is an ideal tool here, because it allows the dynamics of mobile charge carriers inside the perovskite to be monitored following excitation with a short laser pulse whose photon energy falls into the range of the solar spectrum. We first review our insights gained from transient OPTP and photoluminescence spectroscopy on the mechanisms dominating charge-carrier recombination in these materials. We discuss that mono-molecular charge-recombination predominantly originates from trapping of charges, with trap depths being relatively shallow (tens of millielectronvolts) for hybrid lead iodide perovskites. Bimolecular recombination arises from direct band-to-band electron-hole recombination and is found to be in significant violation of the simple Langevin model. Auger recombination exhibits links with electronic band structure, in accordance with its requirement for energy and momentum conservation for all charges involved. We further discuss charge-carrier mobility
-
Electrical Field Effect Dependence of Hall Constant in Bi-films
International Nuclear Information System (INIS)
Butenko, A. V.; Sandomirsky, V.; Schlesinger, Y.; Shvarts, Dm.
1998-01-01
The Electrical Field Effect (EFE) was investigated on the capacitive structure Aumica (ns 10 μm ) - Bi films (L ∼ 350≥≥500 angstrem) in the temperature region 15 - 100 K. The thicknesses of Bi films lay in the region of the Quantum Size Effect (QSE). The transverse electric fields reach the value of 106 V/cm. The corresponding surface carrier concentrations are ns ∼ 10 13 [e]/cm 2 , i.e. the average change of carrier concentration in the 500 angstrem film is n s /L ∼ 10 17 cm -3 . The latter value is comparable with the original carrier concentration in Bi film, 3 f 1017 cm-3. However, EEE, the film resistance change Δ R is 0.5 %. On the other hand EFE change of Hall constant (2ΔR H ), that was observed for the first time in this work, is 5 - 30 % (depending on the film thickness). These results point to a small carrier mobility and to an essential change of carrier concentration in the EEE influence region (of the order of the screening length). The interpretation takes into account both classical and quantum versions of Bi film behavior under EFE conditions. A procedure to determine the surface charge carrier mobilities and concentrations from EFE-data (both ΔR and ORE) is propose
-
Geophysical Surveys of the Hydrologic Basin Underlying Yosemite Valley, California.
Maher, E. L.; Shaw, K. A.; Carey, C.; Dunn, M. E.; Whitman, S.; Bourdeau, J.; Eckert, E.; Louie, J. N.; Stock, G. M.
2017-12-01
UNR students in an Applied Geophysics course conducted geophysical investigations in Yosemite Valley during the months of March and August 2017. The goal of the study is to understand better the depth to bedrock, the geometry of the bedrock basin, and the properties of stratigraphy- below the valley floor. Gutenberg and others published the only prior geophysical investigation in 1956, to constrain the depth to bedrock. We employed gravity, resistivity, and refraction microtremor(ReMi) methods to investigate the interface between valley fill and bedrock, as well as shallow contrasts. Resistivity and ReMi arrays along three north-south transects investigated the top 50-60m of the basin fill. Gravity results constrained by shallow measurements suggest a maximum depth of 1000 m to bedrock. ReMi and resistivity techniques identified shallow contrasts in shear velocity and electrical resistivity that yielded information about the location of the unconfined water table, the thickness of the soil zone, and spatial variation in shallow sediment composition. The upper several meters of sediment commonly showed shear velocities below 200 m/s, while biomass-rich areas and sandy river banks could be below 150 m/s. Vs30 values consistently increased towards the edge of the basin. The general pattern for resistivity profiles was a zone of relatively high resistivity, >100 ohm-m, in the top 4 meters, followed by one or more layers with decreased resistivity. According to gravity measurements, assuming either -0.5 g/cc or -0.7 g/cc density contrast between bedrock and basin sediments, a maximum depth to bedrock is found south of El Capitan at respectively, 1145 ± 215 m or 818 ± 150 m. Longitudinal basin geometry coincides with the basin depth geometry discussed by Gutenberg in 1956. Their results describe a "double camel" shape where the deepest points are near El Capitan and the Ahwahnee Hotel and is shallowest near Yosemite Falls, in a wider part of the valley. An August Deep
-
Electrical injection schemes for nanolasers
DEFF Research Database (Denmark)
Lupi, Alexandra; Chung, Il-Sug; Yvind, Kresten
2013-01-01
The performance of injection schemes among recently demonstrated electrically pumped photonic crystal nanolasers has been investigated numerically. The computation has been carried out at room temperature using a commercial semiconductor simulation software. For the simulations two electrical...... of 3 InGaAsP QWs on an InP substrate has been chosen for the modeling. In the simulations the main focus is on the electrical and optical properties of the nanolasers i.e. electrical resistance, threshold voltage, threshold current and wallplug efficiency. In the current flow evaluation the lowest...... threshold current has been achieved with the lateral electrical injection through the BH; while the lowest resistance has been obtained from the current post structure even though this model shows a higher current threshold because of the lack of carrier confinement. Final scope of the simulations...
-
Liu, Yuanfeng; Sahoo, Pranati; Makongo, Julien P A; Zhou, Xiaoyuan; Kim, Sung-Joo; Chi, Hang; Uher, Ctirad; Pan, Xiaoqing; Poudeu, Pierre F P
2013-05-22
The thermopower (S) and electrical conductivity (σ) in conventional semiconductors are coupled adversely through the carriers' density (n) making it difficult to achieve meaningful simultaneous improvements in both electronic properties through doping and/or substitutional chemistry. Here, we demonstrate the effectiveness of coherently embedded full-Heusler (FH) quantum dots (QDs) in tailoring the density, mobility, and effective mass of charge carriers in the n-type Ti(0.1)Zr(0.9)NiSn half-Heusler matrix. We propose that the embedded FH QD forms a potential barrier at the interface with the matrix due to the offset of their conduction band minima. This potential barrier discriminates existing charge carriers from the conduction band of the matrix with respect to their relative energy leading to simultaneous large enhancements of the thermopower (up to 200%) and carrier mobility (up to 43%) of the resulting Ti(0.1)Zr(0.9)Ni(1+x)Sn nanocomposites. The improvement in S with increasing mole fraction of the FH-QDs arises from a drastic reduction (up to 250%) in the effective carrier density coupled with an increase in the carrier's effective mass (m*), whereas the surprising enhancement in the mobility (μ) is attributed to an increase in the carrier's relaxation time (τ). This strategy to manipulate the transport behavior of existing ensembles of charge carriers within a bulk semiconductor using QDs is very promising and could pave the way to a new generation of high figure of merit thermoelectric materials.
-
The geochemistry of groundwater resources in the Jordan Valley: The impact of the Rift Valley brines
Farber, E.; Vengosh, A.; Gavrieli, I.; Marie, Amarisa; Bullen, T.D.; Mayer, B.; Polak, A.; Shavit, U.
2007-01-01
The chemical composition of groundwater in the Jordan Valley, along the section between the Sea of Galilee and the Dead Sea, is investigated in order to evaluate the origin of the groundwater resources and, in particular, to elucidate the role of deep brines on the chemical composition of the regional groundwater resources in the Jordan Valley. Samples were collected from shallow groundwater in research boreholes on two sites in the northern and southern parts of the Jordan Valley, adjacent to the Jordan River. Data is also compiled from previous published studies. Geochemical data (e.g., Br/Cl, Na/Cl and SO4/Cl ratios) and B, O, Sr and S isotopic compositions are used to define groundwater groups, to map their distribution in the Jordan valley, and to evaluate their origin. The combined geochemical tools enabled the delineation of three major sources of solutes that differentially affect the quality of groundwater in the Jordan Valley: (1) flow and mixing with hypersaline brines with high Br/Cl (>2 ?? 10-3) and low Na/Cl (shallow saline groundwaters influenced by brine mixing exhibit a north-south variation in their Br/Cl and Na/Cl ratios. This chemical trend was observed also in hypersaline brines in the Jordan valley, which suggests a local mixing process between the water bodies. ?? 2007 Elsevier Ltd. All rights reserved.
-
Directory of Open Access Journals (Sweden)
Yang Shuai
2016-01-01
Full Text Available Firstly, using the Monte Carlo method and simulation analysis, this paper builds models for the behaviour of electric vehicles, the conventional charging model and the fast charging model. Secondly, this paper studies the impact that the number of electric vehicles which get access to power grid has on the daily load curve. Then, the paper put forwards a dynamic pricing mechanism of electricity, and studies how this dynamic pricing mechanism guides the electric vehicles to charge orderly. Last but not the least, the paper presents a V2G mechanism. Under this mechanism, electric vehicles can charge orderly and take part in the peak shaving. Research finds that massive electric vehicles’ access to the power grid will increase the peak-valley difference of daily load curve. Dynamic pricing mechanism and V2G mechanism can effectively lead the electric vehicles to take part in peak-shaving, and optimize the daily load curve.
-
Schottky effect model of electrical activity of metallic precipitates in silicon
International Nuclear Information System (INIS)
Plekhanov, P. S.; Tan, T. Y.
2000-01-01
A quantitative model of the electrical activity of metallic precipitates in Si is formulated with an emphasis on the Schottky junction effects of the precipitate-Si system. Carrier diffusion and carrier drift in the Si space charge region are accounted for. Carrier recombination is attributed to the thermionic emission mechanism of charge transport across the Schottky junction rather than the surface recombination. It is shown that the precipitates can have a very large minority carrier capture cross-section. Under weak carrier generation conditions, the supply of minority carriers is found to be the limiting factor of the recombination process. The plausibility of the model is demonstrated by a comparison of calculated and available experimental results. (c) 2000 American Institute of Physics
-
Research and application of AMT method in Happiness valley district in Namibia
International Nuclear Information System (INIS)
Yu Xiang; Zhang Ruliang; Yao Shancong; Fan Honghai; Wang Shengyun
2013-01-01
There are great challenges and difficulties in uranium geology work because of large area grass covered land and few outcrops in Happiness valley district in Namibia. To overcome the problems above, AMT method is undertaken to carry out profile investigation. After finding out electric parameters, different lithologic interfaces were divided, two fracture zones and one anticline structure were, this works laid the ground for the exploration of uranium deposit in Namibia and shew that AMT method is an effective one in finding underground structures. (authors)
-
Advanced carrier depth profiling on Si and Ge with micro four-point probe
DEFF Research Database (Denmark)
Clarysse, Trudo; Eyben, Pierre; Parmentier, Brigitte
2008-01-01
In order to reach the ITRS goals for future complementary metal-oxide semiconductor technologies, there is a growing need for the accurate extraction of ultrashallow electrically active dopant (carrier) profiles. In this work, it will be illustrated that this need can be met by the micro four...
-
Comparative analysis of efficiency in cooking with natural gas and electricity
International Nuclear Information System (INIS)
Amell Arrieta, Andres; Cadavid Sierra Francisco Javier; Ospina Ospina, Juan Carlos
2001-01-01
The natural gas will have, at the Aburra Valley, a massive application in residential process like heating water and cooking, historically doing with electricity. In the study of electricity substitution in necessary to estimate the gas consumption in order to keep satisfying the energetic requirements at the different strata supposing that, alimentary habits in these have not important valuation through the time. Since the volume of natural gas requirements for the electricity substitution at given conditions depend on electrical energy before substitution, electrical equipment efficiency, gas equipment efficiency and gas substitution heating value, the determination of these efficiencies are necessary. This work presents the calculation processes comparing gas heating and cooking processes, versus electrical devises taking in mind several schemes and essay conditions
-
Effects of electric field and magnetic induction on spin injection into organic semiconductors
International Nuclear Information System (INIS)
Wang, Y.M.; Ren, J.F.; Yuan, X.B.; Dou, Z.T.; Hu, G.C.
2011-01-01
Spin-polarized injection and transport into ferromagnetic/organic semiconductor structure are studied theoretically in the presence of the external electric field and magnetic induction. Based on the spin-drift-diffusion theory and Ohm's law, we obtain the charge current polarization, which takes into account the special carriers of organic semiconductors. From the calculation, it is found that the current spin polarization is enhanced by several orders of magnitude by tuning the magnetic induction and electric fields. To get an apparent current spin polarization, the effects of spin-depended interfacial resistances and the special carriers in the organic semiconductor, which are polarons and bipolarons, are also discussed. -- Research highlights: → Current polarization in ferromagnetic/organic semiconductor structure is obtained. → Calculations are based on spin-drift-diffusion theory and Ohm's law. → Current polarization is enhanced by tuning magnetic induction and electric fields. → Effects of interfacial resistances and the special carriers are also discussed.
-
Effect of the microstructure on electrical properties of high-purity germanium
Podkopaev, O. I.; Shimanskii, A. F.; Molotkovskaya, N. O.; Kulakovskaya, T. V.
2013-05-01
The interrelation between the electrical properties and the microstructure of high-purity germanium crystals has been revealed. The electrical conductivity of polycrystalline samples increases and the life-time of nonequilibrium charge carriers in them decreases with a decrease in the crystallite sizes.
-
Zhang, Chaoying; Ning, Zhiyuan; Liu, Yang; Xu, Tingting; Guo, Yao; Zak, Alla; Zhang, Zhiyong; Wang, Sheng; Tenne, Reshef; Chen, Qing
2012-09-01
The electrical properties of WS2 nanotubes (NTs) were studied through measuring 59 devices. Important electrical parameters, such as the carrier concentration, mobility, and effective barrier height at the contacts, were obtained through fitting experimental non-linear I-V curves using a metal-semiconductor-metal model. The carrier mobility was found to be several orders of magnitude higher than that have been reported previously for WS2 NTs. Water absorption was found to decrease the conductivity and carrier mobility of the NTs, and could be removed when the sample was dried. Oxygen absorption also slightly decreased the conductivity of WS2 NTs.
-
On the Nature of Electric Current in the Electrospinning Process
Directory of Open Access Journals (Sweden)
Baturalp Yalcinkaya
2013-01-01
Full Text Available The electric currents between electrodes in the electrospinning process are based on the movement of charge carriers through the spinning space. The majority of the charge carriers are formed by ionization of the air close to the metallic needle and to the polymer jet. The salt contained in the polymer solution contributes to the concentration of charge carriers, depending on its amount. The conductivity of polymer jets does not significantly affect the current since the jets do not link the electrodes.
-
27 CFR 9.27 - Lime Kiln Valley.
2010-04-01
... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Lime Kiln Valley. 9.27... OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.27 Lime Kiln Valley. (a) Name. The name of the viticultural area described in this section is “Lime Kiln Valley...
-
Electrical control of antiferromagnetic metal up to 15 nm
Zhang, PengXiang; Yin, GuFan; Wang, YuYan; Cui, Bin; Pan, Feng; Song, Cheng
2016-08-01
Manipulation of antiferromagnetic (AFM) spins by electrical means is on great demand to develop the AFM spintronics with low power consumption. Here we report a reversible electrical control of antiferromagnetic moments of FeMn up to 15 nm, using an ionic liquid to exert a substantial electric-field effect. The manipulation is demonstrated by the modulation of exchange spring in [Co/Pt]/FeMn system, where AFM moments in FeMn pin the magnetization rotation of Co/Pt. By carrier injection or extraction, the magnetic anisotropy of the top layer in FeMn is modulated to influence the whole exchange spring and then passes its influence to the [Co/Pt]/FeMn interface, through a distance up to the length of exchange spring that fully screens electric field. Comparing FeMn to IrMn, despite the opposite dependence of exchange bias on gate voltages, the same correlation between carrier density and exchange spring stiffness is demonstrated. Besides the fundamental significance of modulating the spin structures in metallic AFM via all-electrical fashion, the present finding would advance the development of low-power-consumption AFM spintronics.
-
Photonic Implementation of 4-QAM/QPSK Electrical Modulation at Millimeter-Wave Frequency
DEFF Research Database (Denmark)
Yu, Xianbin; Jensen, Jesper Bevensee; Tafur Monroy, Idelfonso
2008-01-01
We propose a photonic method for generating millimeter-wave 4-QAM/QPSK modulated signals. The method is based on optical phase modulation by multilevel electrical signals and optical carrier-suppression. Simulation results are presented for 2.5 Gsymbol/s 4-QAM and QPSK signals at a 36 GHz carrier...
-
A valley-filtering switch based on strained graphene.
Zhai, Feng; Ma, Yanling; Zhang, Ying-Tao
2011-09-28
We investigate valley-dependent transport through a graphene sheet modulated by both the substrate strain and the fringe field of two parallel ferromagnetic metal (FM) stripes. When the magnetizations of the two FM stripes are switched from the parallel to the antiparallel alignment, the total conductance, valley polarization and valley conductance excess change greatly over a wide range of Fermi energy, which results from the dependence of the valley-related transmission suppression on the polarity configuration of inhomogeneous magnetic fields. Thus the proposed structure exhibits the significant features of a valley-filtering switch and a magnetoresistance device.
-
A valley-filtering switch based on strained graphene
International Nuclear Information System (INIS)
Zhai Feng; Ma Yanling; Zhang Yingtao
2011-01-01
We investigate valley-dependent transport through a graphene sheet modulated by both the substrate strain and the fringe field of two parallel ferromagnetic metal (FM) stripes. When the magnetizations of the two FM stripes are switched from the parallel to the antiparallel alignment, the total conductance, valley polarization and valley conductance excess change greatly over a wide range of Fermi energy, which results from the dependence of the valley-related transmission suppression on the polarity configuration of inhomogeneous magnetic fields. Thus the proposed structure exhibits the significant features of a valley-filtering switch and a magnetoresistance device. (paper)
-
Drift of charge carriers in crystalline organic semiconductors
Energy Technology Data Exchange (ETDEWEB)
Dong, Jingjuan; Si, Wei [State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433 (China); Wu, Chang-Qin, E-mail: cqw@fudan.edu.cn [State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433 (China); Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433 (China)
2016-04-14
We investigate the direct-current response of crystalline organic semiconductors in the presence of finite external electric fields by the quantum-classical Ehrenfest dynamics complemented with instantaneous decoherence corrections (IDC). The IDC is carried out in the real-space representation with the energy-dependent reweighing factors to account for both intermolecular decoherence and energy relaxation by which conduction occurs. In this way, both the diffusion and drift motion of charge carriers are described in a unified framework. Based on an off-diagonal electron-phonon coupling model for pentacene, we find that the drift velocity initially increases with the electric field and then decreases at higher fields due to the Wannier-Stark localization, and a negative electric-field dependence of mobility is observed. The Einstein relation, which is a manifestation of the fluctuation-dissipation theorem, is found to be restored in electric fields up to ∼10{sup 5} V/cm for a wide temperature region studied. Furthermore, we show that the incorporated decoherence and energy relaxation could explain the large discrepancy between the mobilities calculated by the Ehrenfest dynamics and the full quantum methods, which proves the effectiveness of our approach to take back these missing processes.
-
Water resources of Parowan Valley, Iron County, Utah
Marston, Thomas M.
2017-08-29
Parowan Valley, in Iron County, Utah, covers about 160 square miles west of the Red Cliffs and includes the towns of Parowan, Paragonah, and Summit. The valley is a structural depression formed by northwest-trending faults and is, essentially, a closed surface-water basin although a small part of the valley at the southwestern end drains into the adjacent Cedar Valley. Groundwater occurs in and has been developed mainly from the unconsolidated basin-fill aquifer. Long-term downward trends in groundwater levels have been documented by the U.S. Geological Survey (USGS) since the mid-1950s. The water resources of Parowan Valley were assessed during 2012 to 2014 with an emphasis on refining the understanding of the groundwater and surface-water systems and updating the groundwater budget.Surface-water discharge of five perennial mountain streams that enter Parowan Valley was measured from 2013 to 2014. The total annual surface-water discharge of the five streams during 2013 to 2014 was about 18,000 acre-feet (acre-ft) compared to the average annual streamflow of about 22,000 acre-ft from USGS streamgages operated on the three largest of these streams from the 1940s to the 1980s. The largest stream, Parowan Creek, contributes more than 50 percent of the annual surface-water discharge to the valley, with smaller amounts contributed by Red, Summit, Little, and Cottonwood Creeks.Average annual recharge to the Parowan Valley groundwater system was estimated to be about 25,000 acre-ft from 1994 to 2013. Nearly all recharge occurs as direct infiltration of snowmelt and rainfall on the Markagunt Plateau east of the valley. Smaller amounts of recharge occur as infiltration of streamflow and unconsumed irrigation water near the east side of the valley on alluvial fans associated with mountain streams at the foot of the Red Cliffs. Subsurface flow from the mountain block to the east of the valley is a significant source of groundwater recharge to the basin-fill aquifer
-
Structural, dielectric and electrical properties of ...
Indian Academy of Sciences (India)
tric and ferroelectric memory devices at room temperature,. (Choudhary et al 1999; ... is both due to short- and long-range motions of charge carriers. Though a lot of ... (electric field = 12 kV/cm, time = 8 h) at different tempera- tures using a ...
-
EPA Region 1 - Valley Depth in Meters
Raster of the Depth in meters of EPA-delimited Valleys in Region 1.Valleys (areas that are lower than their neighbors) were extracted from a Digital Elevation Model (USGS, 30m) by finding the local average elevation, subtracting the actual elevation from the average, and selecting areas where the actual elevation was below the average. The landscape was sampled at seven scales (circles of 1, 2, 4, 7, 11, 16, and 22 km radius) to take into account the diversity of valley shapes and sizes. Areas selected in at least four scales were designated as valleys.
-
Stamos, Christina L.; Christensen, Allen H.; Langenheim, Victoria
2017-07-19
The increasing demands on groundwater for water supply in desert areas in California and the western United States have resulted in the need to better understand groundwater sources, availability, and sustainability. This is true for a 650-square-mile area that encompasses the Antelope Valley, El Mirage Valley, and Upper Mojave River Valley groundwater basins, about 50 miles northeast of Los Angeles, California, in the western part of the Mojave Desert. These basins have been adjudicated to ensure that groundwater rights are allocated according to legal judgments. In an effort to assess if the boundary between the Antelope Valley and El Mirage Valley groundwater basins could be better defined, the U.S. Geological Survey began a cooperative study in 2014 with the Mojave Water Agency to better understand the hydrogeology in the area and investigate potential controls on groundwater flow and availability, including basement topography.Recharge is sporadic and primarily from small ephemeral washes and streams that originate in the San Gabriel Mountains to the south; estimates range from about 400 to 1,940 acre-feet per year. Lateral underflow from adjacent basins has been considered minor in previous studies; underflow from the Antelope Valley to the El Mirage Valley groundwater basin has been estimated to be between 100 and 1,900 acre-feet per year. Groundwater discharge is primarily from pumping, mostly by municipal supply wells. Between October 2013 and September 2014, the municipal pumpage in the Antelope Valley and El Mirage Valley groundwater basins was reported to be about 800 and 2,080 acre-feet, respectively.This study was motivated by the results from a previously completed regional gravity study, which suggested a northeast-trending subsurface basement ridge and saddle approximately 3.5 miles west of the boundary between the Antelope Valley and El Mirage Valley groundwater basins that might influence groundwater flow. To better define potential basement
-
Optically initialized robust valley-polarized holes in monolayer WSe2
Hsu, Wei-Ting
2015-11-25
A robust valley polarization is a key prerequisite for exploiting valley pseudospin to carry information in next-generation electronics and optoelectronics. Although monolayer transition metal dichalcogenides with inherent spin–valley coupling offer a unique platform to develop such valleytronic devices, the anticipated long-lived valley pseudospin has not been observed yet. Here we demonstrate that robust valley-polarized holes in monolayer WSe2 can be initialized by optical pumping. Using time-resolved Kerr rotation spectroscopy, we observe a long-lived valley polarization for positive trion with a lifetime approaching 1 ns at low temperatures, which is much longer than the trion recombination lifetime (~10–20 ps). The long-lived valley polarization arises from the transfer of valley pseudospin from photocarriers to resident holes in a specific valley. The optically initialized valley pseudospin of holes remains robust even at room temperature, which opens up the possibility to realize room-temperature valleytronics based on transition metal dichalcogenides.
-
Difficulty of carrier generation in orthorhombic PbO
Energy Technology Data Exchange (ETDEWEB)
Liao, Min; Takemoto, Seiji; Toda, Yoshitake; Tada, Tomofumi [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Xiao, Zewen; Kamiya, Toshio; Hosono, Hideo, E-mail: hosono@msl.titech.ac.jp [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Ueda, Shigenori [Synchrotron X-ray Station at SPring-8, National Institute for Materials Science, Hyogo 679-5148 (Japan); Quantum Beam Unit, National Institute for Materials Science, Tsukuba 305-0047 (Japan)
2016-04-28
Polycrystalline β-PbO films were grown by pulsed laser deposition in atmospheres ranging from oxygen-poor (the oxygen pressure of 0.01 Pa) to oxygen-rich (13 Pa) conditions, and the oxygen chemical potential was further enhanced by ozone annealing to examine hole doping. It was found that each of the as-grown β-PbO films showed poor electrical conductivity, σ < 1.4 × 10{sup −7} S cm{sup −1}, regardless of the oxygen pressure. The density functional calculations revealed that native defects including Pb and O vacancies have deep transition levels and extremely high formation enthalpies, which indicates difficulty of carrier generation in β-PbO and explains the experimentally observed poor electrical conductivity. The analysis of the electronic structures showed that the interaction between Pb 6s and O 2p orbitals is weak due to the deep energy level of Pb 6s and does not raise the valence band maximum (VBM) level unlike that observed in SnO, which is also supported by ultraviolet photoemission spectroscopy measurements. The deep acceptor transition levels of the native defects are attributed to the deep VBM of β-PbO. On the other hand, annealing β-PbO films in reactive oxygen-containing atmospheres (i.e., O{sub 3}) led to a significantly enhanced electrical conductivity (i.e., σ > 7.1 × 10{sup 2} S cm{sup −1}) but it is the result of the formation of an n-type PbO{sub 2} phase because oxygen chemical potential exceeded the phase boundary limit. The striking difference in carrier generation between PbO and SnO is discussed based on the electronic structures calculated by density functional theory.
-
Rational use of electricity in the sideromechanical sector
International Nuclear Information System (INIS)
Perellada Gamio, Maria Rosa
2017-01-01
The present work summarizes the current actions in the sideromecanic sector in Cuba in order to achieve a rational use of the energy carriers and in particular of the Electric Energy, since this constitutes about 85% of the energy structure Of the Organization. It relates the concrete results obtained with the application of Total and Efficient Energy Management Technology in the entities and the projections that have to achieve a better end use of this carrier. (author)
-
Miller, Todd S.; Bugliosi, Edward F.; Reddy, James E.
2008-01-01
The Meads Creek valley encompasses 70 square miles of predominantly forested uplands in the upper Susquehanna River drainage basin. The valley, which was listed as a Priority Waterbody by the New York State Department of Environmental Conservation in 2004, is prone to periodic flooding, mostly in its downstream end, where development is occurring most rapidly. Hydraulic characteristics of the unconsolidated valley-fill aquifer were evaluated, and seepage rates in losing and gaining tributaries were calculated or estimated, in an effort to delineate the aquifer geometry and identify the factors that contribute to flooding. Results indicated that (1) Meads Creek gained about 61 cubic feet of flow per second (about 6.0 cubic feet per second per mile of stream channel) from ground-water discharge and inflow from tributaries in its 10.2-mile reach between the northernmost and southernmost measurement sites; (2) major tributaries in the northern part of the valley are not significant sources of recharge to the aquifer; and (3) major tributaries in the central and southern part of the valley provide recharge to the aquifer. The ground-water portion of streamflow in Meads Creek (excluding tributary inflow) was 11.3 cubic feet per second (ft3/s) in the central part of the valley and 17.2 ft3/s in the southern part - a total of 28.5 ft3/s. Ground-water levels were measured in 29 wells finished in unconfined deposits for construction of a potentiometric-surface map to depict directions of ground-water flow within the valley. In general, ground water flows from the edges of the valley toward Meads Creek and ultimately discharges to it. The horizontal hydraulic gradient for the entire 12-mile-long aquifer averages about 30 feet per mile, whereas the gradient in the southern fourth of the valley averages about half that - about 17 feet per mile. A water budget for the aquifer indicated that 28 percent of recharge was derived from precipitation that falls on the aquifer, 32
-
Angle Dependence of the Orbital Magnetoresistance in Bismuth
Directory of Open Access Journals (Sweden)
Aurélie Collaudin
2015-06-01
Full Text Available We present an extensive study of angle-dependent transverse magnetoresistance in bismuth, with a magnetic field perpendicular to the applied electric current and rotating in three distinct crystallographic planes. The observed angular oscillations are confronted with the expectations of semiclassic transport theory for a multivalley system with anisotropic mobility and the agreement allows us to quantify the components of the mobility tensor for both electrons and holes. A quadratic temperature dependence is resolved. As Hartman argued long ago, this indicates that inelastic resistivity in bismuth is dominated by carrier-carrier scattering. At low temperature and high magnetic field, the threefold symmetry of the lattice is suddenly lost. Specifically, a 2π/3 rotation of magnetic field around the trigonal axis modifies the amplitude of the magnetoresistance below a field-dependent temperature. By following the evolution of this anomaly as a function of temperature and magnetic field, we map the boundary in the (field, temperature plane separating two electronic states. In the less symmetric state, confined to low temperature and high magnetic field, the three Dirac valleys cease to be rotationally invariant. We discuss the possible origins of this spontaneous valley polarization, including a valley-nematic scenario.
-
Electric current distribution of a multiwall carbon nanotube
Energy Technology Data Exchange (ETDEWEB)
Chen, Li-Ying; Chang, Chia-Seng, E-mail: jasonc@phys.sinica.edu.tw [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Nano Science and Technology Program, Taiwan International Graduate Program, Academia Sinica and National Taiwan University, Taiwan (China); Chen, Yu-Jyun [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China)
2016-07-15
The electric current distribution in a multiwall carbon nanotube (MWCNT) was studied by in situ measuring the electric potential along an individual MWCNT in the ultra-high vacuum transmission electron microscope (TEM). The current induced voltage drop along each section of a side-bonded MWCNT was measured by a potentiometric probe in TEM. We have quantitatively derived that the current on the outermost shell depends on the applied current and the shell diameter. More proportion of the total electronic carriers hop into the inner shells when the applied current is increased. The larger a MWCNT’s diameter is, the easier the electronic carriers can hop into the inner shells. We observed that, for an 8 nm MWCNT with 10 μA current applied, 99% of the total current was distributed on the outer two shells.
-
Low-complexity Joint Sub-carrier Phase Noise Compensation for Digital Multi-carrier Systems
DEFF Research Database (Denmark)
Yankov, Metodi Plamenov; Barletta, Luca; Zibar, Darko
2017-01-01
Joint sub-carrier phase noise processing is proposed which recovers the SNR penalty related to decreased sub-carrier baudrate w.r.t. single carrier systems. The method enables digital sub-banding to be safely employed for nonlinear mitigation for modulation formats of up to 256-QAM.......Joint sub-carrier phase noise processing is proposed which recovers the SNR penalty related to decreased sub-carrier baudrate w.r.t. single carrier systems. The method enables digital sub-banding to be safely employed for nonlinear mitigation for modulation formats of up to 256-QAM....
-
Study on the electrical properties of ITO films deposited by facing target sputter deposition
International Nuclear Information System (INIS)
Kim, Youn J; Jin, Su B; Kim, Sung I; Choi, Yoon S; Choi, In S; Han, Jeon G
2009-01-01
This study examined the mechanism for the change in the electrical properties (carrier concentration (n) and mobility (μ)) of tin-doped indium oxide (ITO) films deposited by magnetron sputtering in a confined facing magnetic field. The relationship between the carrier concentration and the mobility was significantly different from the results reported for ITO films deposited by other magnetron sputtering processes. The lowest resistivity obtained for ITO films deposited in a confined facing magnetic field at low substrate temperatures (approximately 120 0 C) was 4.26 x 10 -4 Ω cm at a power density of 3 W cm -2 . Crystalline ITO films were obtained at a low power density range from 3 to 5 W cm -2 due to the increase in the substrate temperature from 120 to 162 0 C. This contributed to the increased carrier concentration and decreased electrical resistivity. X-ray photoelectron spectroscopy revealed an increase in the concentration of the Sn 4+ states. This was attributed to the formation of a crystalline ITO film, which effectively enhanced the carrier concentration and reduced the carrier mobility.
-
International Nuclear Information System (INIS)
Jeong, Dae Kyung; Kang, Jin-Ho; Ryu, Sang-Wan; Ha, Jun-Seok
2017-01-01
A NiO/GaN heterojunction piezoelectric generator was fabricated, and the improvement in device performance was analyzed. The electrical properties of NiO were varied by regulating the gas environment during sputtering. An optimized NiO layer was adopted for high piezoelectric voltage generation. Internal carrier screening was revealed to be the dominant mechanism degrading the piezoelectric performance, necessitating the suppression of carrier screening. The highly resistive NiO layer was advantageous in the suppression of carrier transport across the junction that screened the piezoelectric field. The maximum piezoelectric voltage and current density values obtained were 7.55 V and 1.14 µ A cm −2 , respectively. The power obtained was sufficient to operate a light-emitting diode combined with a charging circuit. (paper)
-
Electrical conductivity study on polythiophenes films
International Nuclear Information System (INIS)
Youm, I.; Cadene, M.
1994-10-01
The electrical conduction mechanism of two classes of polythiophenes: polythiophene (PT) and poly(3-methylthiophene) (PMT) films containing various levels of doping counter-ions was investigated. The temperature dependence of electrical conductivity obeys the Mott equation based on variable range hopping. The dimension of the variable range hopping is correlated with the structure of the conducting polymer. It seems for these polymers that carrier transport via mobile conjugational defects does not play a detectable role. (author). 17 refs, 3 figs, 1 tab
-
Carrier-interleaved orthogonal multi-electrode multi-carrier resistivity-measurement tool
International Nuclear Information System (INIS)
Cai, Yu; Sha, Shuang
2016-01-01
This paper proposes a new carrier-interleaved orthogonal multi-electrode multi-carrier resistivity-measurement tool used in a cylindrical borehole environment during oil-based mud drilling processes. The new tool is an orthogonal frequency division multiplexing access-based contactless multi-measurand detection tool. The tool can measure formation resistivity in different azimuthal angles and elevational depths. It can measure many more measurands simultaneously in a specified bandwidth than the legacy frequency division multiplexing multi-measurand tool without a channel-select filter while avoiding inter-carrier interference. The paper also shows that formation resistivity is not sensitive to frequency in certain frequency bands. The average resistivity collected from N subcarriers can increase the measurement of the signal-to-noise ratio (SNR) by N times given no amplitude clipping in the current-injection electrode. If the clipping limit is taken into account, with the phase rotation of each single carrier, the amplitude peak-to-average ratio can be reduced by 3 times, and the SNR can achieve a 9/ N times gain over the single-carrier system. The carrier-interleaving technique is also introduced to counter the carrier frequency offset (CFO) effect, where the CFO will cause inter-pad interference. A qualitative analysis and simulations demonstrate that block-interleaving performs better than tone-interleaving when coping with a large CFO. The theoretical analysis also suggests that increasing the subcarrier number can increase the measurement speed or enhance elevational resolution without sacrificing receiver performance. The complex orthogonal multi-pad multi-carrier resistivity logging tool, in which all subcarriers are complex signals, can provide a larger available subcarrier pool than other types of transceivers. (paper)
-
Faunt, Claudia C.; Hanson, Randall T.; Belitz, Kenneth; Rogers, Laurel
2009-01-01
Competition for water resources is growing throughout California, particularly in the Central Valley. Since 1980, the Central Valley's population has nearly doubled to 3.8 million people. It is expected to increase to 6 million by 2020. Statewide population growth, anticipated reductions in Colorado River water deliveries, drought, and the ecological crisis in the Sacramento-San Joaquin Delta have created an intense demand for water. Tools and information can be used to help manage the Central Valley aquifer system, an important State and national resource.
-
Integration of electric vehiclesin cooper atives taxi ambato. Ecuador
Directory of Open Access Journals (Sweden)
Mery Esperanza Ruiz Guajala
2015-11-01
Full Text Available The transition from combustion vehicles towards a new electrical system friendly to the environment, is a decision to be taken by carrier based on cost-benefit analysis which generates buying it, and contribute to society not only for the service they provide, but to prevent air pollution we breathe, and if we add the future energy supply, since the Ecuadorian State in 2016 will provide the whole country of this important resource. The study focuses on two parts: the first on surveys of taxi owners to describe their perception of the integration of electric vehicles, and the second in determining the economic and financial feasibility of acquiring the vehicle Nissan Leaf by the member of the cooperative taxi. The most important conclusion is that the carriers are willing to buy an electric vehicle to mitigate the emission of toxic gases, and that its decision would save 50% in annual operating costs of your vehicle.
-
Acoustic manipulation of active spherical carriers: Generation of negative radiation force
Energy Technology Data Exchange (ETDEWEB)
Rajabi, Majid, E-mail: majid_rajabi@iust.ac.ir; Mojahed, Alireza
2016-09-15
This paper examines theoretically a novel mechanism of generating negative (pulling) radiation force for acoustic manipulation of spherical carriers equipped with piezoelectric actuators in its inner surface. In this mechanism, the spherical particle is handled by common plane progressive monochromatic acoustic waves instead of zero-/higher- order Bessel beams or standing waves field. The handling strategy is based on applying a spatially uniform harmonic electrical voltage at the piezoelectric actuator with the same frequency of handling acoustic waves, in order to change the radiation force effect from repulsive (away from source) to attractive (toward source). This study may be considered as a start point for development of contact-free precise handling and entrapment technology of active carriers which are essential in many engineering and medicine applications.
-
Energy Technology Data Exchange (ETDEWEB)
Shinn, J.H. (ed.)
1976-12-17
This workshop on potential effcts of geothermal energy conversion on the ecology of Imperial Valley brought together personnel of Lawrence Livermore Laboratory and many collaborators under the sponsorship of the ERDA Imperial Valley Environmental Project (IVEP). The LLL Integrated Assessment Team identified the electric power potential and its associated effluents, discharges, subsidence, water requirements, land use, and noise. The Working Groups addressed the ecological problems. Water resource management problems include forces on water use, irrigation methods and water use for crops, water production, and water allocation. Agricultural problems are the contamination of edible crops and the reclamation of soil. A strategy is discussed for predevelopment baseline data and for identification of source term tracers. Wildlife resources might be threatened by habitat destruction, powerline impacts, noise and disturbance effects, gas emissions, and secondary impacts such as population pressure. Aquatic ecosystems in both the Salton Sea and fresh waters have potential hazards of salinity and trace metal effects, as well as existing stresses; baseline and bioassay studies are discussed. Problems from air pollution resulting from geothermal resource development might occur, particularly to vegetation and pollinator insects. Conversion of injury data to predicted economic damage isneeded. Finally, Imperial Valley desert ecosystems might be threatened by destruction of habitat and the possible effects on community structure such as those resulting from brine spills.
-
Energy Technology Data Exchange (ETDEWEB)
Johansson, Bengt
1995-03-01
The purpose of this report is to study the technical and economic prerequisites to attain reduced carbon dioxide emissions through the use of biomass-based energy carriers in the transportation sector, and to study other environmental impacts resulting from an increased use of biomass-based energy carriers. CO{sub 2} emission reduction per unit arable and forest land used for biomass production (kg CO{sub 2}/ha,year) and costs for CO{sub 2} emission reduction (SEK/kg CO{sub 2}) are estimated for the substitution of gasoline and diesel with rape methyl ester, biogas from lucerne, ethanol from wheat and ethanol, methanol, hydrogen and electricity from Salix and logging residues. Of the studied energy carriers, those based on Salix provide the largest CO{sub 2} emission reduction. In a medium long perspective, the costs for CO{sub 2} emission reduction seem to be lowest for methanol from Salix and logging residues. The use of fuel cell vehicles, using methanol or hydrogen as energy carriers, can in a longer perspective provide more energy efficient utilization of biomass for transportation than the use of internal combustion engine vehicles. 136 refs, 12 figs, 25 tabs
-
Wlostowski, A. N.; Gooseff, M. N.; Bernzott, E. D.; McKnight, D. M.; Jaros, C.; Lyons, W.
2013-12-01
The McMurdo Dry Valleys of Antarctica is one of the coldest (average annual air temperature of -18°C) and driest (ecological connections in the McMurdo Dry Valleys. Intermittent glacial meltwater streams connect glaciers to closed basin lakes and compose the most prominent hydrologic nexus in the valleys. This study uses of 20+ years of stream temperature, electrical conductivity (EC), and discharge data to enhance our quantitative understanding of the temporal dynamics of hydrologic connections along the glacier-stream-lake continuum. Annually, streamflow occurs for a relatively brief 10-12 week period of the austral summer. Longer streams are more prone to intermittent dry periods during the flow season, making for a harsher ecological environment than shorter streams. Diurnal streamflow variation occurs primarily as a result of changing solar postion relative to the source-glacier surfaces. Therfore, different streams predictably experience high flows and low flows at different times of the day. Electrical conductivity also exhibits diel variations, but the nature of EC-discharge relationships differs among streams throughout the valley. Longer streams have higher EC values and lower discharges than shorter streams, suggesting that hyporheic zones act as a significant solute source and hydrologic reservoir along longer streams. Water temperatures are consistently warmer in longer streams, relative to shorter streams, likely due to prolonged exposure to incident radiation with longer surface water residence times. Inter-annually, several shorter streams in the region show significant increases in Q10, Q30, Q50, Q70, Q90, and/or Q100 flows across the 20+ year record, indicating a long-term non-stationarity in hydrologic system dynamics. The tight coupling between surface waters and the glacier surface energy balance bring forth remarkably consistent hydrologic patterns on the daily and annual timescales, providing a model system for understanding fundamental
-
Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers
DEFF Research Database (Denmark)
Borri, Paola; Langbein, Wolfgang Werner; Hvam, Jørn Märcher
2000-01-01
recovery of the spectral hole within ~100 fs is measured, comparable to bulk and quantum-well amplifiers, which is contradicting a carrier relaxation bottleneck in electrically pumped QD devices. The CH dynamics in the QD is quantitatively compared with results on an InGaAsP bulk amplifier. Reduced CH......The ultrafast gain and index dynamics in a set of InAs-InGaAs-GaAs quantum-dot (QD) amplifiers are measured at room temperature with femtosecond resolution. The role of spectral hole-burning (SHB) and carrier heating (CH) in the recovery of gain compression is investigated in detail. An ultrafast...
-
Valleytronics and phase transition in silicene
Energy Technology Data Exchange (ETDEWEB)
Aftab, Tayyaba, E-mail: tayyaba.agha@gmail.com
2017-03-11
Highlights: • Energy shift in the Dirac points depending strongly on proximity exchange term. • Berry curvature is non-zero and valley dependent in silicene. • Orbital magnetic moments are opposite for each valley and tunable. • Charge carriers are polarized depending on valley and spin degree of freedom. • Interplay of electric field and spin orbit interaction causes phase transition. - Abstract: Magnetic and transport properties of silicene in the presence of perpendicular electromagnetic fields and a ferromagnetic material are studied. It is shown that for small exchange field, the magnetic moment associated with each valley is opposite for the other and it gives a shift in band energy, by a Zeeman-like coupling term. Thus opening a new horizon for valley–orbit coupling. Magnetic proximity effect is seen to adjust the spintronics of each valley. Valley polarization is calculated using the semi classical formulation of electron dynamics. It can be modified and measured due to its contribution in Hall conductivity. Quantum phase transitions are observed in silicene, providing a tool to control the topological state experimentally. The strong dependence of the physical properties on valley degree of freedom is an important step towards valleytronics.
-
Behaviour of Charge Carriers in As-Deposited and Annealed Undoped TCO Films
International Nuclear Information System (INIS)
Zhou Yan-Wen; Wu Fa-Yu; Zheng Chun-Yan
2011-01-01
We examine the structures, cut-off points of transmittance spectra and electric properties of undoped ZnO, SnO 2 and CdO films by scanning electron microscopy, x-ray diffraction, spectrophotometer and Hall-effect measurements, respectively. The films are deposited by using an rf magnetron sputtering system from powder targets in argon and then annealed in vacuum. The structures and properties of the as-deposited films are compared with those of the annealed one. We try to explain the behaviour of charge carriers based on the semiconductor physics theory. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
-
Dilogo, Ismail H; Arya, Abikara; Phedy; Loho, Tony
2013-07-01
to determine the rate of MRSA-carrier among patients, family members and health care providers, and the association between MRSA-carrier family members and health care providers on MRSA infection patient after orthopaedic surgery. this is a cross-sectional analytical study. Samples were taken consecutively during December 2010 to December 2011, consisting of postoperative patients infected with MRSA, attending family members, and the medical officers with history of contact with the patient. Swab culture were taken from nasal and axilla of all subjects. The incidence of MRSA infection, and MRSA-carrier on the patient, family members and medical officers were presented descriptively, while their association with MRSA infection was statistically tested using Fischer exact test. during the study period, there were 759 surgeries, with 4 (0.5%) patients were identified to have MRSA infection. Of these four cases, 48 subjects were enrolled. The rate of MRSA-carrier among patients, family and health care providers were 50%, 25% and 0% respectively. There were no significant association between MRSA and the rates of MRSA-carrier on the family member or health care providers. the incidence of MRSA infection, MRSA-carrier patient, MRSA-carrier health care providers, and family member carrier were 0.5%, 50%, 0%, and 25% respectively. No significant association found between MRSA-carrier on the family member or health care providers and MRSA infection patient. There were no MRSA infection found on the health care provider.
-
Current and future competitiveness of renewable energy carriers - Conceptions about competitiveness
International Nuclear Information System (INIS)
Lundgren, K.
1998-01-01
The dissertation draws attention to the fact that in the world today 80% of the resources that are used are limited - non renewable energy carriers - and because of the long time between planning and doing (carrying out) within the energy sector, it is worthwhile from the long-term perspective to steer early on towards more sustainable solutions, such as renewable energy carriers. The State and the market have begun to adjust to concepts such as 'competitiveness', which can be viewed as containing both feasibility and legitimacy aspects - the state through different regulations and environmental taxes and environmental fees, and actors on the market that marginally produce/choose renewable energy carriers. The overlying methodology in the dissertation is an actor's viewpoint. This viewpoint brings forth, in turn, two different views, the analytical and the interpretative. The dissertation presents different stances within the energy sector: commercial production logic, commercial sustainability logic, and the socio-economic sustainability logic. By drawing one's attention to how one has the possibility to create (enact) his own reality, it is possible to highlight how organisations can increase their competitiveness by being conscious of their own view and others, logic, which in turn forms their views about competitiveness, which in turn determines which projects will materialize. Enterprises and individuals create a description of reality together through a dialectic process, i.e. by developing an environmental management system that contains elements of environmental auditing, environmental performance indicators, and environmental labelling, which 'reveal' the production conditions that lie behind the actualization of the final product. An example is the product, 'green' electricity, which, in spite of the fact that the final product - electricity - is identical irrespective of the production method, just at the moment can be sold at different prices according
-
Energy Technology Data Exchange (ETDEWEB)
1981-10-01
Ford, Bacon and Davis Utah Inc. has reevalated the Monument Valley site in order to revise the March 1977 engineering assessment of the problems resulting from the existence of radioactive uranium mill tailings at Monument Valley, Arizona. This engineering assessment has included the preparation of topographic maps, the performance of core drillings and radiometric measurements sufficient to determine areas and volumes of tailings and radiation exposure of individuals and nearby populations, the investigations of site hydrology and meteorology, and the evaluation and costing of alternative corrective actions. Radon gas released from the 1.1 million tons of tailings at the Monument Valley site constitutes the most significant environmental impact, although windblown tailings and external gamma radiation also are factors. The four alternative actions presented in this engineering assessment range from millsite decontamination with the addition of 3 m of stabilization cover material (Option I), to removal of the tailings to remote disposal sites and decontamination of the tailings site (Options II through IV). Cost estimates for the four options range from about $6,600,000 for stabilization in-place, to about $15,900,000 for disposal at a distance of about 15 mi. Three principal alternatives for reprocessing the Monument Valley tailings were examined: heap leaching; Treatment at an existing mill; and reprocessing at a new conventional mill constructed for tailings reprocessing. The cost of the uranium recovery is economically unattractive.
-
International Nuclear Information System (INIS)
1981-10-01
Ford, Bacon and Davis Utah Inc. has reevalated the Monument Valley site in order to revise the March 1977 engineering assessment of the problems resulting from the existence of radioactive uranium mill tailings at Monument Valley, Arizona. This engineering assessment has included the preparation of topographic maps, the performance of core drillings and radiometric measurements sufficient to determine areas and volumes of tailings and radiation exposure of individuals and nearby populations, the investigations of site hydrology and meteorology, and the evaluation and costing of alternative corrective actions. Radon gas released from the 1.1 million tons of tailings at the Monument Valley site constitutes the most significant environmental impact, although windblown tailings and external gamma radiation also are factors. The four alternative actions presented in this engineering assessment range from millsite decontamination with the addition of 3 m of stabilization cover material (Option I), to removal of the tailings to remote disposal sites and decontamination of the tailings site (Options II through IV). Cost estimates for the four options range from about $6,600,000 for stabilization in-place, to about $15,900,000 for disposal at a distance of about 15 mi. Three principal alternatives for reprocessing the Monument Valley tailings were examined: heap leaching; Treatment at an existing mill; and reprocessing at a new conventional mill constructed for tailings reprocessing. The cost of the uranium recovery is economically unattractive
-
Sustainable agricultural development in inland valleys
Zwart, S.J.
2018-01-01
The inland valley in Africa are common landscapes that have favorable conditions for agricultural production. Compared to the surrounding uplands they are characterized by a relatively high and secure water availability and high soil fertility levels. Inland valleys thus have a high agricultural
-
Tunable electronic properties of silicon nanowires under strain and electric bias
Directory of Open Access Journals (Sweden)
Alexis Nduwimana
2014-07-01
Full Text Available The electronic structure characteristics of silicon nanowires under strain and electric bias are studied using first-principles density functional theory. The unique wire-like structure leads to distinct spatial distribution of carriers, which can be tailored by applying tensile and compressive strains, as well as by an electric bias. Our results indicate that the combined effect of strain and electric bias leads to tunable electronic structures that can be used for piezo-electric devices.
-
Valley-polarized quantum transport generated by gauge fields in graphene
Settnes, Mikkel; Garcia, Jose H.; Roche, Stephan
2017-09-01
We report on the possibility to simultaneously generate in graphene a bulk valley-polarized dissipative transport and a quantum valley Hall effect by combining strain-induced gauge fields and real magnetic fields. Such unique phenomenon results from a ‘resonance/anti-resonance’ effect driven by the superposition/cancellation of superimposed gauge fields which differently affect time reversal symmetry. The onset of a valley-polarized Hall current concomitant to a dissipative valley-polarized current flow in the opposite valley is revealed by a {{e}2}/h Hall conductivity plateau. We employ efficient linear scaling Kubo transport methods combined with a valley projection scheme to access valley-dependent conductivities and show that the results are robust against disorder.
-
Groundwater availability of the Central Valley Aquifer, California
Faunt, Claudia C.
2009-01-01
California's Central Valley covers about 20,000 square miles and is one of the most productive agricultural regions in the world. More than 250 different crops are grown in the Central Valley with an estimated value of $17 billion per year. This irrigated agriculture relies heavily on surface-water diversions and groundwater pumpage. Approximately one-sixth of the Nation's irrigated land is in the Central Valley, and about one-fifth of the Nation's groundwater demand is supplied from its aquifers. The Central Valley also is rapidly becoming an important area for California's expanding urban population. Since 1980, the population of the Central Valley has nearly doubled from 2 million to 3.8 million people. The Census Bureau projects that the Central Valley's population will increase to 6 million people by 2020. This surge in population has increased the competition for water resources within the Central Valley and statewide, which likely will be exacerbated by anticipated reductions in deliveries of Colorado River water to southern California. In response to this competition for water, a number of water-related issues have gained prominence: conservation of agricultural land, conjunctive use, artificial recharge, hydrologic implications of land-use change, and effects of climate variability. To provide information to stakeholders addressing these issues, the USGS Groundwater Resources Program made a detailed assessment of groundwater availability of the Central Valley aquifer system, that includes: (1) the present status of groundwater resources; (2) how these resources have changed over time; and (3) tools to assess system responses to stresses from future human uses and climate variability and change. This effort builds on previous investigations, such as the USGS Central Valley Regional Aquifer System and Analysis (CV-RASA) project and several other groundwater studies in the Valley completed by Federal, State and local agencies at differing scales. The
-
Large Modulation of Charge Carrier Mobility in Doped Nanoporous Organic Transistors
Energy Technology Data Exchange (ETDEWEB)
Zhang, Fengjiao [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA; Dai, Xiaojuan [Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 P. R. China; Zhu, Weikun [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA; Chung, Hyunjoong [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA; Diao, Ying [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA
2017-05-10
Molecular doping of organic electronics has shown promise to sensitively modulate important device metrics. One critical challenge is the disruption of structure order upon doping of highly crystalline organic semiconductors, which significantly reduces the charge carrier mobility. This paper demonstrates a new method to achieve large modulation of charge carrier mobility via channel doping without disrupting the molecular ordering. Central to the method is the introduction of nanopores into the organic semiconductor thin films via a simple and robust templated meniscus-guided coating method. Using this method, the charge carrier mobility of C8-benzothieno[3,2-b]benzothiophene transistors is boosted by almost sevenfold. This paper further demonstrates enhanced electron transport by close to an order of magnitude in a diketopyrrolopyrrole-based donor–acceptor polymer. Combining spectroscopic measurements, density functional theory calculations, and electrical characterizations, the doping mechanism is identified as partial-charge-transfer induced trap filling. The nanopores serve to enhance the dopant/organic semiconductor charge transfer reaction by exposing the π-electrons to the pore wall.
-
14 CFR 399.82 - Passing off of carrier identity by affiliation between carriers.
2010-01-01
... forth in paragraph (c) of this section. In such cases the Board may determine in an adjudicatory... carrier shall not engage in joint public relations activities at points served by both carriers which tend... either carrier are performed in common with the other carrier or as part of a single system. In cases...
-
An example of Alaknanda valley, Garhwal Himalaya, India
Indian Academy of Sciences (India)
2014) have been best explained by the geometry .... flows through narrow valley confined by the steep valley slopes. ... valley (figure 3b) which opens up around Srina- ... Method. 4.1 Drainage basin and stream network. Digital Elevation Model (DEM) helps in extracting ... was processed to fill the pits or sinks, and to obtain.
-
Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET
International Nuclear Information System (INIS)
Lei Xiao-Yi; Liu Hong-Xia; Zhang Kai; Zhang Yue; Zheng Xue-Feng; Ma Xiao-Hua; Hao Yue
2013-01-01
The hot carrier effect (HCE) of an ultra-deep sub-micron p-channel metal—oxide semiconductor field-effect transistor (pMOSFET) is investigated in this paper. Experiments indicate that the generation of positively charged interface states is the predominant mechanism in the case of the ultra-deep sub-micron pMOSFET. The relation of the pMOSFET hot carrier degradation to stress time (t), channel width (W), channel length (L), and stress voltage (V d ) is then discussed. Based on the relation, a lifetime prediction model is proposed, which can predict the lifetime of the ultra-deep sub-micron pMOSFET accurately and reflect the influence of the factors on hot carrier degradation directly. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
-
California's restless giant: the Long Valley Caldera
Hill, David P.; Bailey, Roy A.; Hendley, James W.; Stauffer, Peter H.; Marcaida, Mae
2014-01-01
Scientists have monitored geologic unrest in the Long Valley, California, area since 1980. In that year, following a swarm of strong earthquakes, they discovered that the central part of the Long Valley Caldera had begun actively rising. Unrest in the area persists today. The U.S. Geological Survey (USGS) continues to provide the public and civil authorities with current information on the volcanic hazard at Long Valley and is prepared to give timely warnings of any impending eruption.
-
Zhang, Qingyun; Schwingenschlögl, Udo
2018-04-01
Using first-principles calculations, we investigate the electronic properties of the two-dimensional Ga X /MX 2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between Ga X and MX 2 is found to result in Rashba splitting at the valence-band edge around the Γ point, which grows for increasing strength of the spin-orbit coupling in the p orbitals of the chalcogenide atoms. The location of the valence-band maximum in the Brillouin zone can be tuned by strain and application of an out-of-plane electric field. The coexistence of Rashba splitting (in-plane spin direction) and band splitting at the K and K' valleys (out-of-plane spin direction) makes Ga X /MX 2 heterostructures interesting for spintronics and valleytronics. They are promising candidates for two-dimensional spin-field-effect transistors and spin-valley Hall effect devices. Our findings shed light on the spin-valley coupling in van der Waals heterostructures.
-
Paroskie, Allison; Oso, Olatunde; DeBaun, Michael R.; Sidonio, Robert F
2014-01-01
Introduction Hemophilia A, the result of reduced factor VIII (FVIII) activity, is an X-linked recessive bleeding disorder. Previous reports of Hemophilia A carriers suggest an increased bleeding tendency. Our objective was to determine the attitudes and understanding of the Hemophilia A carrier bleeding phenotype, and opinions regarding timing of carrier testing from the perspective of both medical providers and affected patients. Data from this survey was used as preliminary data for an ongoing prospective study. Material and Methods An electronic survey was distributed to physicians and nurses employed at Hemophilia Treatment Centers (HTC), and Hemophilia A carriers who were members of Hemophilia Federation of America. Questions focused on the clinical understanding of bleeding symptoms and management of Hemophilia A carriers, and the timing and intensity of carrier testing. Results Our survey indicates that 51% (36/51) of providers compared to 78% (36/46) of carriers believe that Hemophilia A carriers with normal FVIII activity have an increased bleeding tendency (pHemophilia A carriers report a high frequency of bleeding symptoms. Regarding carrier testing, 72% (50/69) of medical providers recommend testing after 14 years of age, conversely 65% (29/45) of Hemophilia A carriers prefer testing to be done prior to this age (pHemophilia A carriers self-report a higher frequency of bleeding than previously acknowledged, and have a preference for earlier testing to confirm carrier status. PMID:24309601
-
... valley fever. These fungi are commonly found in soil in specific regions. The fungi's spores can be stirred into the air by ... species have a complex life cycle. In the soil, they grow as a mold with long filaments that break off into airborne ...
-
Quadratic dependence of the spin-induced Hall voltage on longitudinal electric field
International Nuclear Information System (INIS)
Miah, M. Idrish
2008-01-01
The effect of optically induced spins in semiconductors in the low electric field is investigated. Here we report an experiment which investigates the effect of a longitudinal electric field (E) on the spin-polarized carriers generated by a circularly polarized light in semiconductors. Our experiment observes the effect as a spin-induced anomalous Hall voltage (V AH ) resulting from spin-carrier electrons accumulating at the transverse edges of the sample. Unlike the ordinary Hall effect, a quadratic dependence of V AH on E is observed, which agrees with the results of the recent theoretical investigations. It is also found that V AH depends on the doping density. The results are discussed
-
Nematic and Valley Ordering in Anisotropic Quantum Hall Systems
Parameswaran, S. A.; Abanin, D. A.; Kivelson, S. A.; Sondhi, S. L.
2010-03-01
We consider a multi-valley two dimensional electron system in the quantum Hall effect (QHE) regime. We focus on QHE states that arise due to spontaneous breaking of the valley symmetry by the Coulomb interactions. We show that the anisotropy of the Fermi surface in each valley, which is generally present in such systems, favors states where all the electrons reside in one of the valleys. In a clean system, the valley ordering occurs via a finite temperature Ising-like phase transition, which, owing to the Fermi surface anisotropy, is accompanied by the onset of nematic order. In a disordered system, domains of opposite polarization are formed, and therefore long-range valley order is destroyed, however, the resulting state is still compressible. We discuss the transport properties in ordered and disordered regimes, and point out the possible relation of our results to recent experiments in AlAs [1]. [1] Y. P. Shkolnikov, S. Misra, N. C. Bishop, E. P. De Poortere, and M. Shayegan, Observation of Quantum Hall ``Valley Skyrmions", Phys. Rev. Lett. 95, 068809 (2005)[2] D.A. Abanin, S.A. Parameswaran, S.A. Kivelson and S.L. Sondhi, Nematic and Valley Ordering in Anisotropic Quantum Hall Systems, to be published.
-
One- and two-dimensional dopant/carrier profiling for ULSI
Vandervorst, W.; Clarysse, T.; De Wolf, P.; Trenkler, T.; Hantschel, T.; Stephenson, R.; Janssens, T.
1998-11-01
Dopant/carrier profiles constitute the basis of the operation of a semiconductor device and thus play a decisive role in the performance of a transistor and are subjected to the same scaling laws as the other constituents of a modern semiconductor device and continuously evolve towards shallower and more complex configurations. This evolution has increased the demands on the profiling techniques in particular in terms of resolution and quantification such that a constant reevaluation and improvement of the tools is required. As no single technique provides all the necessary information (dopant distribution, electrical activation,..) with the requested spatial and depth resolution, the present paper attempts to provide an assessment of those tools which can be considered as the main metrology technologies for ULSI-applications. For 1D-dopant profiling secondary ion mass spectrometry (SIMS) has progressed towards a generally accepted tool meeting the requirements. For 1D-carrier profiling spreading resistance profiling and microwave surface impedance profiling are envisaged as the best choices but extra developments are required to promote them to routinely applicable methods. As no main metrology tool exist for 2D-dopant profiling, main emphasis is on 2D-carrier profiling tools based on scanning probe microscopy. Scanning spreading resistance (SSRM) and scanning capacitance microscopy (SCM) are the preferred methods although neither of them already meets all the requirements. Complementary information can be extracted from Nanopotentiometry which samples the device operation in more detail. Concurrent use of carrier profiling tools, Nanopotentiometry, analysis of device characteristics and simulations is required to provide a complete characterization of deep submicron devices.
-
Energy Technology Data Exchange (ETDEWEB)
Schmidt, Tobias D., E-mail: Tobias.Schmidt@physik.uni-augsburg.de; Jäger, Lars; Brütting, Wolfgang, E-mail: Wolfgang.Bruetting@physik.uni-augsburg.de [Institute of Physics, University of Augsburg, Augsburg (Germany); Noguchi, Yutaka [Department of Electronics and Bioinformatics, School of Science and Technology, Meiji University, Kawasaki (Japan); Center of Frontier Science, Chiba University, Chiba (Japan); Ishii, Hisao [Center of Frontier Science, Chiba University, Chiba (Japan)
2015-06-07
Although the long-term stability of organic light-emitting diodes (OLEDs) under electrical operation made significant progress in recent years, the fundamental underlying mechanisms of the efficiency decrease during operation are not well understood. Hence, we present a comprehensive degradation study of an OLED structure comprising the well-known green phosphorescent emitter Ir(ppy){sub 3}. We use transient methods to analyze both electrical and optical changes during an accelerated aging protocol. Combining the results of displacement current measurements with time-resolved investigation of the excited states lifetimes of the emitter allows for a correlation of electrical (e.g., increase of the driving voltage due to trap formation) and optical (e.g., decrease of light-output) changes induced by degradation. Therewith, it is possible to identify two mechanisms resulting in the drop of the luminance: a decrease of the radiative quantum efficiency of the emitting system due to triplet-polaron-quenching at trapped charge carriers and a modified charge carrier injection and transport, as well as trap-assisted non-radiative recombination resulting in a deterioration of the charge carrier balance of the device.
-
Directory of Open Access Journals (Sweden)
Yuancheng Zhao
2018-01-01
Full Text Available With the rapid growth of domestic electric vehicle charging loads, the peak-valley gap and power fluctuation rate of power systems increase sharply, which can lead to the increase of network losses and energy efficiency reduction. This paper tries to regulate network loads and reduce power system transmission loss by optimizing domestic electric vehicle charging loads. In this paper, a domestic electric vehicle charging loads model is first developed by analyzing the key factors that can affect users’ charging behavior. Subsequently, the Monte Carlo method is proposed to simulate the power consumption of a cluster of domestic electric vehicles. After that, an optimal electric vehicle charging strategy based on the 0-1 integer programming is presented to regulate network daily loads. Finally, by taking the IEEE33 distributed power system as an example, this paper tries to verify the efficacy of the proposed optimal charging strategy and the necessity for considering seasonal factors when scheduling electric vehicle charging loads. Simulation results show that the proposed 0-1 integer programming method does have good performance in reducing the network peak-valley gap, voltage fluctuation rate, and transmission loss. Moreover, it has some potential to further reduce power system transmission loss when seasonal factors are considered.
-
Hopping mobility of charge carriers in polymers in the earliest stages after their generation
International Nuclear Information System (INIS)
Tyutnev, A.P.; Subbotin, A.V.; Chekunaev, N.I.
1989-01-01
It has been found that both the photo- and the radiation conductivity of a number of polymers (primarily polyvinylcarbazole, polystyrene, and polyethylene terephthalate) are of a molecular nature, and movement of the generated charge carriers is by a hopping and not by a band mechanism. Analytical expressions for the instantaneous effective mobility and effective displacement of charge carriers in a unitary electric field were obtained in the approximation of isolated pairs of nearest neighbors for four species (monoenergetic, exponential, Gaussian, and bilevel) of energy application of hopping sites randomly distributed in space. Problems of the application of these expressions to real polymers are discussed on the example of polyvinylcarbazole
-
Charge carrier transport properties in layer structured hexagonal boron nitride
Directory of Open Access Journals (Sweden)
T. C. Doan
2014-10-01
Full Text Available Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (˜ 6.4 eV, hexagonal boron nitride (hBN has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K. The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T0−α with α = 3.02, satisfying the two-dimensional (2D carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm-1, which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.
-
Valley photonic crystals for control of spin and topology.
Dong, Jian-Wen; Chen, Xiao-Dong; Zhu, Hanyu; Wang, Yuan; Zhang, Xiang
2017-03-01
Photonic crystals offer unprecedented opportunity for light manipulation and applications in optical communication and sensing. Exploration of topology in photonic crystals and metamaterials with non-zero gauge field has inspired a number of intriguing optical phenomena such as one-way transport and Weyl points. Recently, a new degree of freedom, valley, has been demonstrated in two-dimensional materials. Here, we propose a concept of valley photonic crystals with electromagnetic duality symmetry but broken inversion symmetry. We observe photonic valley Hall effect originating from valley-dependent spin-split bulk bands, even in topologically trivial photonic crystals. Valley-spin locking behaviour results in selective net spin flow inside bulk valley photonic crystals. We also show the independent control of valley and topology in a single system that has been long pursued in electronic systems, resulting in topologically-protected flat edge states. Valley photonic crystals not only offer a route towards the observation of non-trivial states, but also open the way for device applications in integrated photonics and information processing using spin-dependent transportation.
-
Charge Carrier Transport Properties of Vacuum Evaporated Anthrylvinylbenzene Thin Films
Directory of Open Access Journals (Sweden)
Haikel HRICHI
2014-05-01
Full Text Available The charge carrier conduction processes and dielectric properties of two new materials based on anthracene core structure, 1-(9 anthrylvinyl-4-benzyloxybenzene (AVB and 1,4- bis(9-anthrylvinylbenzene (AV2B diodes have been investigated using dc current density–voltage (J–V and AC impedance spectroscopy (100 Hz–10 MHz. The DC electrical properties of ITO/anthracene derivative /Al device showing an ohmic behavior at low voltages and switches to space charge limited current (SCLC conduction with exponential trap distribution at higher voltages. The best performance device was achieved from ITO/AVB/Al structure showing the high charge carrier mobility which has also been evaluated from SCLC as 6.55´10-6 cm/Vs. According to the impedance spectroscopy results the structures were modeled by equivalent circuit designed as a parallel resistor Rp and capacitor Cp network in series with resistor Rs. The evolution of the electrical parameters with frequency and bias voltage of these anthracene-based systems has been discussed. The conductivity s(w evolution with frequency and bias voltage was studied for ITO/anthracene derivatives/Al devices. The dc conductivity sdc for these devices has been determined. The ac conductivity sac showed a variation in angular frequency as A.ws with a critical exponent s< 1 suggesting a hopping conduction mechanism at high frequency.
-
Disorder-dependent valley properties in monolayer WSe2
Tran, Kha
2017-07-19
We investigate the effect of disorder on exciton valley polarization and valley coherence in monolayer WSe2. By analyzing the polarization properties of photoluminescence, the valley coherence (VC) and valley polarization (VP) are quantified across the inhomogeneously broadened exciton resonance. We find that disorder plays a critical role in the exciton VC, while affecting VP less. For different monolayer samples with disorder characterized by their Stokes shift (SS), VC decreases in samples with higher SS while VP does not follow a simple trend. These two methods consistently demonstrate that VC as defined by the degree of linearly polarized photoluminescence is more sensitive to disorder, motivating further theoretical studies.
-
Lawson, M. J.; Yin, A.; Rhodes, E. J.
2015-12-01
Steep landscapes are known to provide sediment to sink regions, but often petrological factors can dominate basin sedimentation. Within Eureka Valley, in northwestern Death Valley National Park, normal faulting has exposed a steep cliff face on the western margin of the Last Chance range with four kilometers of vertical relief from the valley floor and an angle of repose of nearly 38 degrees. The cliff face is composed of Cambrian limestone and dolomite, including the Bonanza King, Carrara and Wood Canyon formations. Interacting with local normal faulting, these units preferentially break off the cliff face in coherent blocks, which result in landslide deposits rather than as finer grained material found within the basin. The valley is well known for a large sand dune, which derives its sediment from distal sources to the north, instead of from the adjacent Last Chance Range cliff face. During the Holocene, sediment is sourced primary from the northerly Willow Wash and Cucomungo canyon, a relatively small drainage (less than 80 km2) within the Sylvan Mountains. Within this drainage, the Jurassic quartz monzonite of Beer Creek is heavily fractured due to motion of the Fish Valley Lake - Death Valley fault zone. Thus, the quartz monzonite is more easily eroded than the well-consolidated limestone and dolomite that forms the Last Change Range cliff face. As well, the resultant eroded material is smaller grained, and thus more easily transported than the limestone. Consequently, this work highlights an excellent example of the strong influence that source material can have on basin sedimentation.
-
2010-07-01
... respect to each employee employed in charter activities for a street, suburban or interurban electric railway or local trolley or motorbus carrier pursuant to section 7(n) of the Act, the employer shall...
-
Energy Technology Data Exchange (ETDEWEB)
Dominguez, J.; Manrique, P. A.; Pinedo, I.
2009-10-12
In this report, two examples of renewable energy assessments based on Geographical Information Systems are presented. Several case studies have been carried out in the Valley of Cauca (Colombia), and one on them has been used to size a hybrid system. The results of this particular case study are presented in a second report. The aim of this document is analysing the different sources of data that could be used in the characterization of solar energy for electricity and electricity-heat use. With this purpose, data of two areas in Valley of Cauca obtained from the Atlas of Solar Radiation of Colombia, SWERA project and SSE-NASA have been compared. The data coming from these sources has been analysed using a Geographical Information System, and the conclusions are described along with cartographic and numeric products. These reports are the result of a collaboration established between Universidad del Valle (Colombia) and CIEMAT (Spain), and have been done by the author while his staying at our center included on his PhD program.
-
12.5 Gb/s carrier-injection silicon Mach—Zehnder optical modulator
International Nuclear Information System (INIS)
Chen Hongtao; Ding Jianfeng; Yang Lin
2012-01-01
We demonstrate a 12.5 Gb/s carrier-injection silicon Mach—Zehnder optical modulator. Under a nonreturn-zero (NRZ) pre-emphasized electrical drive signal with voltage swing of 6.3 V and forward bias of 0.7 V, the eye is clearly opened with an extinction ratio of 8.4 dB. The device exhibits high modulation efficiency, with a figure of merit V π L of 0.036 V·mm. (semiconductor devices)
-
Antifan activism as a response to MTV's The Valleys
Directory of Open Access Journals (Sweden)
Bethan Jones
2015-06-01
Full Text Available MTV has launched several reality TV shows in the United Kingdom, but one, The Valleys (2012–14, about youth moving from the South Wales Valleys to Cardiff, has received much criticism. Grassroots criticism of the show arose, and a Valleys-centric campaign, The Valleys Are Here, took direct action. I adopt Jonathan Gray's definition of antifans to complicate ideas of fan activism. I utilize comments and posts made on the Valleys Are Here Twitter feed and Facebook account, as well as the organization's Web site, to examine the ways in which they encourage activism among antifans of the series. I pay particular attention to activist calls for MTV to be held accountable for its positioning of Wales and the Valleys, and to how it encourages participation among varied groups of people whose common denominator is their dislike of the series. Fan activism is not exclusive to people who consider themselves fans, and notions of fan activism can be complicated by drawing in antifans.
-
Yimer, Y.Y.; Bobbert, P.A.; Coehoorn, R.
2008-01-01
We investigate charge transport in disordered organic host–guest systems with a bimodal Gaussian density of states (DOS). The energy difference between the two Gaussians defines the trap depth. By solving the Pauli master equation for the hopping of charge carriers on a regular lattice with site
-
International Nuclear Information System (INIS)
Chen, D. Y.; Sun, Y.; He, Y. J.; Xu, L.; Xu, J.
2014-01-01
We have investigated carrier transport in SiO 2 /nc-Si/SiO 2 multi-layers by room temperature current-voltage measurements. Resonant tunneling signatures accompanied by current peaks are observed. Carrier transport in the multi-layers were analyzed by plots of ln(I/V 2 ) as a function of 1/V and ln(I) as a function of V 1/2 . Results suggest that besides films quality, nc-Si and barrier sub-layer thicknesses are important parameters that restrict carrier transport. When thicknesses are both small, direct tunneling dominates carrier transport, resonant tunneling occurs only at certain voltages and multi-resonant tunneling related current peaks can be observed but with peak to valley current ratio (PVCR) values smaller than 1.5. When barrier thickness is increased, trap-related and even high field related tunneling is excited, causing that multi-current peaks cannot be observed clearly, only one current peak with higher PVCR value of 7.7 can be observed. While if the thickness of nc-Si is large enough, quantum confinement is not so strong, a broad current peak with PVCR value as high as 60 can be measured, which may be due to small energy difference between the splitting energy levels in the quantum dots of nc-Si. Size distribution in a wide range may cause un-controllability of the peak voltages
-
Sealed substrate carrier for electroplating
Ganti, Kalyana Bhargava [Fremont, CA
2012-07-17
One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The substrate carrier includes a non-conductive carrier body on which the substrates are held, and conductive lines are embedded within the carrier body. A conductive bus bar is embedded into a top side of the carrier body and is conductively coupled to the conductive lines. A thermoplastic overmold covers a portion of the bus bar, and there is a plastic-to-plastic bond between the thermoplastic overmold and the non-conductive carrier body. Other embodiments, aspects and features are also disclosed.
-
The quasi-steady state of the valley wind system
Directory of Open Access Journals (Sweden)
Juerg eSchmidli
2015-12-01
Full Text Available The quasi-steady-state limit of the diurnal valley wind system is investigated overidealized three-dimensional topography. Although this limit is rarely attained inreality due to ever-changing forcings, the investigation of this limit canprovide valuable insight, in particular on the mass and heat fluxes associatedwith the along-valley wind. We derive a scaling relation for the quasi-steady-state along-valleymass flux as a function of valley geometry, valley size, atmospheric stratification,and surface sensible heat flux forcing. The scaling relation is tested by comparisonwith the mass flux diagnosed from numerical simulations of the valleywind system. Good agreement is found. The results also provide insight into the relationbetween surface friction and the strength of the along-valley pressure gradient.
-
A Regional Time-of-Use Electricity Price Based Optimal Charging Strategy for Electrical Vehicles
Directory of Open Access Journals (Sweden)
Jun Yang
2016-08-01
Full Text Available With the popularization of electric vehicles (EVs, the out-of-order charging behaviors of large numbers of EVs will bring new challenges to the safe and economic operation of power systems. This paper studies an optimal charging strategy for EVs. For that a typical urban zone is divided into four regions, a regional time-of-use (RTOU electricity price model is proposed to guide EVs when and where to charge considering spatial and temporal characteristics. In light of the elastic coefficient, the user response to the RTOU electricity price is analyzed, and also a bilayer optimization charging strategy including regional-layer and node-layer models is suggested to schedule the EVs. On the one hand, the regional layer model is designed to coordinate the EVs located in different time and space. On the other hand, the node layer model is built to schedule the EVs to charge in certain nodes. According to the simulations of an IEEE 33-bus distribution network, the performance of the proposed optimal charging strategy is verified. The results demonstrate that the proposed bilayer optimization strategy can effectively decrease the charging cost of users, mitigate the peak-valley load difference and the network loss. Besides, the RTOU electricity price shows better performance than the time-of-use (TOU electricity price.
-
DEFF Research Database (Denmark)
Dery, H.; Tromborg, Bjarne; Eisenstein, G.
2003-01-01
We describe carrier-carrier scattering dynamics in an inverted quantum well structure including the nonparabolic nature of the valance band. A solution of the semiconductor Bloch equations yields strong evidence to a large change in the temporal evolution of the carrier distributions compared to ...
-
Spin-valley splitting of electron beam in graphene
Directory of Open Access Journals (Sweden)
Yu Song
2016-11-01
Full Text Available We study spatial separation of the four degenerate spin-valley components of an electron beam in a EuO-induced and top-gated ferromagnetic/pristine/strained graphene structure. We show that, in a full resonant tunneling regime for all beam components, the formation of standing waves can lead sudden phase jumps ∼−π and giant lateral Goos-Hänchen shifts as large as the transverse beam width, while the interplay of the spin and valley imaginary wave vectors in the modulated regions can lead differences of resonant angles for the four spin-valley flavors, manifesting a spin-valley beam splitting effect. The splitting effect is found to be controllable by the gating and strain.
-
Quadratic dependence of the spin-induced Hall voltage on longitudinal electric field
Energy Technology Data Exchange (ETDEWEB)
Miah, M. Idrish [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au
2008-10-15
The effect of optically induced spins in semiconductors in the low electric field is investigated. Here we report an experiment which investigates the effect of a longitudinal electric field (E) on the spin-polarized carriers generated by a circularly polarized light in semiconductors. Our experiment observes the effect as a spin-induced anomalous Hall voltage (V{sub AH}) resulting from spin-carrier electrons accumulating at the transverse edges of the sample. Unlike the ordinary Hall effect, a quadratic dependence of V{sub AH} on E is observed, which agrees with the results of the recent theoretical investigations. It is also found that V{sub AH} depends on the doping density. The results are discussed.
-
Yimer, Y.Y.; Bobbert, P.A.; Coehoorn, R.
2009-01-01
We investigate charge transport in disordered organic host–guest systems with a bimodal Gaussian density of states. The energy difference between the peaks of the two Gaussians defines the trap depth. By solving the Pauli master equation for the hopping of charge carriers on a regular lattice we
-
2010-07-01
... 29 Labor 4 2010-07-01 2010-07-01 false Carrier. 1201.1 Section 1201.1 Labor Regulations Relating to Labor (Continued) NATIONAL MEDIATION BOARD DEFINITIONS § 1201.1 Carrier. The term carrier includes any express company, sleeping car company, carrier by railroad, subject to the Interstate Commerce Act...
-
Electrically Anisotropic Layered Perovskite Single Crystal
Li, Ting-You
2016-04-01
Organic-inorganic hybrid perovskites (OIHPs), which are promising materials for electronic and optoelectronic applications (1-10), have made into layered organic-inorganic hybrid perovskites (LOIHPs). These LOIHPs have been applied to thin-film transistors, solar cells and tunable wavelength phosphors (11-18). It is known that devices fabricated with single crystal exhibit the superior performance, which makes the growth of large-sized single crystals critical for future device applications (19-23). However, the difficulty in growing large-sized LOIHPs single crystal with superior electrical properties limits their practical applications. Here, we report a method to grow the centimeter-scaled LOIHP single crystal of [(HOC2H4NH3)2PbI4], demonstrating the potentials in mass production. After that, we reveal anisotropic electrical and optoelectronic properties which proved the carrier propagating along inorganic framework. The carrier mobility of in-inorganic-plane (in-plane) devices shows the average value of 45 cm2 V–1 s–1 which is about 100 times greater than the record of LOIHP devices (15), showing the importance of single crystal in device application. Moreover, the LOIHP single crystals show its ultra-short carrier lifetime of 42.7 ps and photoluminescence quantum efficiency (PLQE) of 25.4 %. We expect this report to be a start of LOIHPs for advanced applications in which the anisotropic properties are needed (24-25), and meets the demand of high-speed applications and fast-response applications.
-
The carbon stable isotope biogeochemistry of streams, Taylor Valley, Antarctica
International Nuclear Information System (INIS)
Lyons, W.B.; Leslie, D.L.; Harmon, R.S.; Neumann, K.; Welch, K.A.; Bisson, K.M.; McKnight, D.M.
2013-01-01
Highlights: ► δ 13 C-DIC reported from McMurdo Dry Valleys, Antarctica, streams. ► Stream water δ 13 C PDB values range −9.4‰ to +5.1‰, largely inorganic in character. ► Atmospheric exchange is the dominant control on δ 13 C-DIC. - Abstract: The McMurdo Dry Valleys region of Antarctica is the largest ice-free region on the continent. This study reports the first C stable isotope measurements for dissolved inorganic C present in ephemeral streams in four dry valleys that flow for four to twelve weeks during the austral summer. One of these valleys, Taylor Valley, has been the focus of the McMurdo Dry Valleys Long-Term Ecological Research (MCM-LTER) program since 1993. Within Taylor Valley, numerous ephemeral streams deliver water to three perennially ice-covered, closed-basin lakes: Lake Fryxell, Lake Hoare, and Lake Bonney. The Onyx River in the Wright Valley, the longest river in Antarctica, flows for 40 km from the Wright Lower Glacier and Lake Brownworth at the foot of the glacier to Lake Vanda. Streamflow in the McMurdo Dry Valley streams is produced primarily from glacial melt, as there is no overland flow. However, hyporheic zone exchange can be a major hydrogeochemical process in these streams. Depending on landscape position, these streams vary in gradient, channel substrate, biomass abundance, and hyporheic zone extent. This study sampled streams from Taylor, Wright, Garwood, and Miers Valleys and conducted diurnal sampling of two streams of different character in Taylor Valley. In addition, transect sampling was undertaken of the Onyx River in Wright Valley. The δ 13 C PDB values from these streams span a range of greater than 14‰, from −9.4‰ to +5.1‰, with the majority of samples falling between −3‰ and +2‰, suggesting that the C stable isotope composition of dissolved C in McMurdo Dry Valley streams is largely inorganic in character. Because there are no vascular plants on this landscape and no groundwater input to these
-
Lessons learned from the West Valley spent nuclear fuel shipment within the United States
International Nuclear Information System (INIS)
Tyacke, M.J.; Anderson, T.
2004-01-01
This paper describes the lessons learned from the U.S. Department of Energy (DOE) transportation of 125 DOE-owned commercial spent nuclear fuel (SNF) assemblies by railroad from the West Valley Demonstration Project to the Idaho National Engineering and Environmental Laboratory (INEEL). On July 17, 2003, DOE made the largest single shipment of commercial SNF in the history of the United States. This was a highly visible and political shipment that used two specially designed Type B transportation and storage casks. This paper describes the background and history of the shipment. It discusses the technical challenges for licensing Type B packages for hauling large quantities of SNF, including the unique design features, testing and analysis. This paper also discusses the preshipment planning, preparations, coordination, route evaluation and selection, carrier selection and negotiations, security, inspections, tracking, and interim storage at the INEEL
-
DEFF Research Database (Denmark)
Borri, P.; Langbein, W.; Hvam, Jørn Märcher
2001-01-01
The ultrafast gain dynamics in an electrically pumped InAs/InGaAs/GaAs quantum-dot amplifier are measured at room temperature with femtosecond resolution, and compared with results on an InGaAsP bulk amplifier. The role of spectral hole burning and carrier heating in the recovery of the gain...
-
International Nuclear Information System (INIS)
Witczak, S.C.; Kosier, S.L.; Schrimpf, R.D.; Galloway, K.F.
1994-01-01
The combined effects of ionizing radiation and hot-carrier stress on the current gain of npn bipolar junction transistors were investigated. The analysis was carried out experimentally by examining the consequences of interchanging the order in which the two stress types were applied to identical transistors which were stressed to various levels of damage. The results indicate that the hot-carrier response of the transistor is improved by radiation damage, whereas hot-carrier damage has little effect on subsequent radiation stress. Characterization of the temporal progression of hot-carrier effects revealed that hot-carrier stress acts initially to reduce excess base current and improve current gain in irradiated transistors. PISCES simulations show that the magnitude of the peak electric-field within the emitter-base depletion region is reduced significantly by net positive oxide charges induced by radiation. The interaction of the two stress types is explained in a qualitative model based on the probability of hot-carrier injection determined by radiation damage and on the neutralization and compensation of radiation-induced positive oxide charges by injected electrons. The result imply that a bound on damage due to the combined stress types is achieved when hot-carrier stress precedes any irradiation
-
International Nuclear Information System (INIS)
Miura, Daisuke; Tezuka, Tetsuo
2014-01-01
The choice of secondary energy carriers, such as electricity, hydrogen and ammonia, influences not only economic and environmental performances but also the reliability of an entire energy system. This article focuses on ammonia because of its excellent property in energy storage, and assesses the relative advantages of several ammonia energy systems for vehicle use in Japan by estimating energy efficiency, CO 2 emissions, and the supply cost of several ammonia energy paths, which are then compared with alternative paths using different energy carriers including hydrogen and electricity. The article also discusses inherent merits and challenges of ammonia energy systems and identifies directions for future research and development. Using ammonia as an energy carrier was demonstrated to be competitive in terms of efficiency, CO 2 emissions and supply cost for energy systems requiring fairly large numbers of storage days. This assessment shows that the use of ammonia in an energy system can improve the continuity of the energy supply in a country or region with insecurity of supply. On the other hand, we argue that further technical improvements and cost reduction associated with both conventional and unconventional ammonia production is imperative for using ammonia in a normal energy system. - Highlights: • We assess merits of energy supply systems using ammonia as an energy carrier. • Comparison with hydrogen or electricity-based energy systems was carried out. • We find ammonia is competitive when requiring large numbers of storage days. • The use of ammonia in energy systems can improve the continuity of energy supply. • Technical improvements are needed to make ammonia attractive in normal systems
-
Structural, optical and Carrier dynamics of self-assembled InGaN nanocolumns on Si(111)
Kumar, Praveen; Devi, Pooja; Soto Rodriguez, P. E. D.; Jain, Rishabh; Jaggi, Neena; Sinha, R. K.; Kumar, Mahesh
2018-05-01
We investigated the morphological, structural, optical, electrical and carrier relaxation dynamic changes on the self-assembled grown InGaN nanocolumns (NCs) directly on p-Si(111) substrate at two different substrate temperature, namely 580 °C (A) and 500 °C (B). The emission wavelength of comparably low temperature (LT) grown NCs was red-shifted from 3.2eV to 2.4eV. First observations on the charge carrier dynamics of these directly grown NCs show comparable broad excited state absorption (ESA) for LT gown NCs, which manifest bi-exponential decay due to the radiative defects generated during the coalescence of these NCs.
-
Valley-polarized quantum transport generated by gauge fields in graphene
DEFF Research Database (Denmark)
Settnes, Mikkel; Garcia, Jose H; Roche, Stephan
2017-01-01
We report on the possibility to simultaneously generate in graphene a bulk valley-polarized dissipative transport and a quantum valley Hall effect by combining strain-induced gauge fields and real magnetic fields. Such unique phenomenon results from a ‘resonance/anti-resonance’ effect driven by t...... Kubo transport methods combined with a valley projection scheme to access valley-dependent conductivities and show that the results are robust against disorder....
-
Tennessee Valley Authority becomes first to install digital process protection system
International Nuclear Information System (INIS)
Miller, W.; Doyle, J.
1991-01-01
Westinghouse Pressurized Water Reactors were originally furnished with analog process protection equipment of various vintages. The older equipment is quickly reaching the point of obsolescence, becoming costly to maintain and operate, its qualification increasingly difficult to achieve. Newer digital-based systems offer improved performance, automatic calibration, and streamlined surveillance test features, as discussed here. For these reasons, the Tennessee Valley Authority installed the world's first digital process protection system, complete with automatic test and calibration features, in its Sequoyah units 1 and 2 last year. The US utility replaced its ageing analog system with Westinghouse Electric's Eagle 21 Process Protection System during a routine maintenance shutdown in a record 23 days. (author)
-
Mohajerani, M. S.; Khachadorian, S.; Schimpke, T.; Nenstiel, C.; Hartmann, J.; Ledig, J.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.
2016-02-01
Three-dimensional III-nitride micro-structures are being developed as a promising candidate for the future opto-electrical devices. In this study, we demonstrate a quick and straight-forward method to locally evaluate free-carrier concentrations and a crystalline quality in individual GaN:Si micro-rods. By employing micro-Raman mapping and analyzing lower frequency branch of A1(LO)- and E1(LO)-phonon-plasmon-coupled modes (LPP-), the free carrier concentrations are determined in axial and planar configurations, respectively. Due to a gradual doping profile along the micro-rods, a highly spatially resolved mapping on the sidewall is exploited to reconstruct free carrier concentration profile along the GaN:Si micro-rods. Despite remarkably high free carrier concentrations above 1 × 1020 cm-3, the micro-rods reveal an excellent crystalline quality, without a doping-induced stress.
-
DEFF Research Database (Denmark)
Espinosa-Gongora, Carmen; Larsen, Niels; Schonning, Kristian
2016-01-01
pathogen in animal carriers. The aim of this study was to determine whether the nasal microbiome of pig S. aureus carriers differs from that of non-carriers. The V3-V5 region of the 16S rRNA gene was sequenced from nasal swabs of 44 S. aureus carriers and 56 non-carriers using the 454 GS FLX titanium...... microbiome of pigs that are not colonized with S. aureus harbours several species/taxa that are significantly less abundant in pig carriers, suggesting that the nasal microbiota may play a role in the individual predisposition to S. aureus nasal carriage in pigs. Further research is warranted to isolate...
-
Larsen, Ida Unmack; Mortensen, Erik Lykke; Vinther-Jensen, Tua; Nielsen, Jørgen Erik; Knudsen, Gitte Moos; Vogel, Asmus
2016-12-01
Huntington's disease (HD) is associated with risk for developing psychiatric symptoms. Vulnerability or resilience to psychiatric symptoms may be associated with personality traits. This exploratory study, aimed to investigate personality traits in a large cohort of HD carriers and at risk gene-expansion negative individuals (HD non-carriers), exploring whether carrying the HD gene or growing up in an HD family influences personality traits. Forty-seven HD carriers, Thirty-nine HD non-carriers, and 121 healthy controls answered the Danish version of the revised NEO personality inventory. Comparisons between HD carriers and HD non-carriers were mostly non-significant but the combined group of HD carriers and non-carriers showed significantly higher scores on the facets: "hostility," "assertiveness," and "activity" and on the trait "Conscientiousness" relative to controls, "Conscientiousness" have been associated with resilience to psychiatric symptoms. Twelve HD carriers and non-carriers were classified as depressed and showed significantly lower scores on "Extraversion" and "Conscientiousness" and significantly higher scores on "Neuroticism," which are associated with vulnerability to psychiatric symptoms. Our findings suggest that, there is no direct effect of the HD gene on personality traits, but that personality assessment may be relevant to use when identifying individuals from HD families who are vulnerable to develop psychiatric symptoms. © 2016 Wiley Periodicals, Inc. © 2016 Wiley Periodicals, Inc.
-
Study of excess carrier dynamics in polar, semi-polar, and non-polar (In,Ga)N epilayers and QWs
Energy Technology Data Exchange (ETDEWEB)
Aleksiejunas, R. [Institute of Applied Research, Vilnius University, Sauletekio Ave. 9-III, 10222 Vilnius (Lithuania); Laser Research Center, Vilnius University, Sauletekio Ave. 10, 10222 Vilnius (Lithuania); Lubys, L.; Jarasiunas, K. [Institute of Applied Research, Vilnius University, Sauletekio Ave. 9-III, 10222 Vilnius (Lithuania); Vengris, M. [Laser Research Center, Vilnius University, Sauletekio Ave. 10, 10222 Vilnius (Lithuania); Wernicke, T.; Hoffmann, V.; Netzel, C.; Knauer, A.; Weyers, M. [Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12498 Berlin (Germany); Kneissl, M. [Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12498 Berlin (Germany); Institute of Solid State Physics, Technische Universitaet Berlin, Hardenbergstr. 36, 10623 Berlin (Germany)
2011-07-15
We studied carrier recombination and diffusion in GaN/sapphire templates, (In,Ga)N layers, and (In,Ga)N quantum well structures oriented along the polar [0001], semi-polar [11-22], and non-polar [11-20] orientations by means of light induced transient grating, differential transmission, and photoluminescence optical techniques. We show that the lifetime of excess carriers drops by orders of magnitude when changing the orientation from polar to non-polar, both in GaN templates and (In,Ga)N layers. We attribute the shorter lifetime to carrier trapping by extended structural defects that are more abundant in non-polar grown samples. In addition, we observe pronounced carrier localization effects in the semi- and non-polar layers. We show that thick (In,Ga)N layers inherit the properties of the GaN templates. However, the thin quantum well structures show a lower carrier trapping activity. So, a better electrical quality can be assumed as compared to the thick (In,Ga)N layers. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
-
Chang, Ni-Bin; Davila, Eric
2008-01-01
The Lower Rio Grande Valley (LRGV or Valley) in Texas, facing the big waste management challenge along the US-Mexico border today, is at the crossroads as a result of the rapid population growth, the scarcity of landfill space, the bi-nation's trade impacts, and the illusive goal of environmental sustainability. This paper offers a unique municipal solid waste investigation with regard to both physical and chemical characteristics leading to illuminate the necessary management policies with greater regional relevancy. With multiple sampling campaigns conducted during the spring of 2005, this study holistically summarizes the composition of solid waste, the statistical distribution patterns of key recyclable items, and the heating value in an uncertain environment. Research findings indicate that high fractions of plastics and paper in the waste stream imply a strong potential for energy recovery. Incineration options are thus bolstered by mildly high heating values across 10 cities in this region, which may lead to save land resources required for final disposal and increase electricity generation in the long run. Additional regression analyses further identify the correlation between recyclable items and heating value, which show that current recycling programs permit no obvious negative impacts on the incineration option. Final statistical hypothesis tests for both the Brownsville-Harlingen-San Benito and the McAllen-Edinburg-Mission metropolitan regions help foster consistent management strategies across the Valley regardless of the trivial differences of waste characteristics in between.
-
DEFF Research Database (Denmark)
Hansen, Paul Robert
2015-01-01
To produce antibodies against synthetic peptides it is necessary to couple them to a protein carrier. This chapter provides a nonspecialist overview of peptide-carrier conjugation. Furthermore, a protocol for coupling cysteine-containing peptides to bovine serum albumin is outlined....
-
Titan's fluvial valleys: Morphology, distribution, and spectral properties
Langhans, M.H.; Jaumann, R.; Stephan, K.; Brown, R.H.; Buratti, B.J.; Clark, R.N.; Baines, K.H.; Nicholson, P.D.; Lorenz, R.D.; Soderblom, L.A.; Soderblom, J.M.; Sotin, Christophe; Barnes, J.W.; Nelson, R.
2012-01-01
Titan's fluvial channels have been investigated based on data obtained by the Synthetic Aperture Radar (SAR) instrument and the Visible and Infrared Mapping Spectrometer (VIMS) onboard the Cassini spacecraft. In this paper, a database of fluvial features is created based on radar-SAR data aiming to unveil the distribution and the morphologic and spectral characteristics of valleys on Titan on a global scale. It will also study the spatial relations between fluvial valleys and Titan's geologic units and spectral surface units which have become accessible thanks to Cassini-VIMS data. Several distinct morphologic types of fluvial valleys can be discerned by SAR-images. Dendritic valley networks appear to have much in common with terrestrial dendritic systems owing to a hierarchical and tree-shaped arrangement of the tributaries which is indicative of an origin from precipitation. Dry valleys constitute another class of valleys resembling terrestrial wadis, an indication of episodic and strong flow events. Other valley types, such as putative canyons, cannot be correlated with rainfall based on their morphology alone, since it cannot be ruled out that they may have originated from volcanic/tectonic action or groundwater sapping. Highly developed and complex fluvial networks with channel lengths of up to 1200 km and widths of up to 10 km are concentrated only at a few locations whereas single valleys are scattered over all latitudes. Fluvial valleys are frequently found in mountainous areas. Some terrains, such as equatorial dune fields and undifferentiated plains at mid-latitudes, are almost entirely free of valleys. Spectrally, fluvial terrains are often characterized by a high reflectance in each of Titan's atmospheric windows, as most of them are located on Titan's bright 'continents'. Nevertheless, valleys are spatially associated with a surface unit appearing blue due to its higher reflection at 1.3??m in a VIMS false color RGB composite with R: 1.59/1.27??m, G: 2
-
Mehraeen, Shafigh; Coropceanu, Veaceslav; Bré das, Jean-Luc
2013-01-01
We compare the merits of a hopping model and a mobility edge model in the description of the effect of charge-carrier concentration on the electrical conductivity, carrier mobility, and Fermi energy of organic semiconductors. We consider the case
-
Groundwater quality in Coachella Valley, California
Dawson, Barbara J. Milby; Belitz, Kenneth
2012-01-01
Groundwater provides more than 40 percent of California’s drinking water. To protect this vital resource, the State of California created the Groundwater Ambient Monitoring and Assessment (GAMA) Program. The Priority Basin Project of the GAMA Program provides a comprehensive assessment of the State’s groundwater quality and increases public access to groundwater-quality information. Coachella Valley is one of the study areas being evaluated. The Coachella study area is approximately 820 square miles (2,124 square kilometers) and includes the Coachella Valley groundwater basin (California Department of Water Resources, 2003). Coachella Valley has an arid climate, with average annual rainfall of about 6 inches (15 centimeters). The runoff from the surrounding mountains drains to rivers that flow east and south out of the study area to the Salton Sea. Land use in the study area is approximately 67 percent (%) natural, 21% agricultural, and 12% urban. The primary natural land cover is shrubland. The largest urban areas are the cities of Indio and Palm Springs (2010 populations of 76,000 and 44,000, respectively). Groundwater in this basin is used for public and domestic water supply and for irrigation. The main water-bearing units are gravel, sand, silt, and clay derived from surrounding mountains. The primary aquifers in Coachella Valley are defined as those parts of the aquifers corresponding to the perforated intervals of wells listed in the California Department of Public Health database. Public-supply wells in Coachella Valley are completed to depths between 490 and 900 feet (149 to 274 meters), consist of solid casing from the land surface to a depth of 260 to 510 feet (79 to 155 meters), and are screened or perforated below the solid casing. Recharge to the groundwater system is primarily runoff from the surrounding mountains, and by direct infiltration of irrigation. The primary sources of discharge are pumping wells, evapotranspiration, and underflow to
-
Study of electrical percolation phenomenon from the dielectric and ...
Indian Academy of Sciences (India)
pattern of real part of electric modulus (M′) at selected frequencies is similar to dielectric constant. The existence of .... charge carriers have sufficient time to orient in the direction ..... Aziz S B and Abidin Z H Z 2013 J. Soft Matter Article ID.
-
Kouhlane, Y.; Bouhafs, D.; Khelifati, N.; Belhousse, S.; Menari, H.; Guenda, A.; Khelfane, A.
2016-11-01
The electrical properties of Czochralski silicon (Cz-Si) p-type boron-doped bare wafers have been investigated after rapid thermal processing (RTP) with different peak temperatures. Treated wafers were exposed to light for various illumination times, and the effective carrier lifetime ( τ eff) measured using the quasi-steady-state photoconductance (QSSPC) technique. τ eff values dropped after prolonged illumination exposure due to light-induced degradation (LID) related to electrical activation of boron-oxygen (BO) complexes, except in the sample treated with peak temperature of 785°C, for which the τ eff degradation was less pronounced. Also, a reduction was observed when using the 830°C peak temperature, an effect that was enhanced by alteration of the wafer morphology (roughness). Furthermore, the electrical resistivity presented good stability under light exposure as a function of temperature compared with reference wafers. Additionally, the optical absorption edge shifted to higher wavelength, leading to increased free-carrier absorption by treated wafers. Moreover, a theoretical model is used to understand the lifetime degradation and regeneration behavior as a function of illumination time. We conclude that RTP plays an important role in carrier lifetime regeneration for Cz-Si wafers via modification of optoelectronic and structural properties. The balance between an optimized RTP cycle and the rest of the solar cell elaboration process can overcome the negative effect of LID and contribute to achievement of higher solar cell efficiency and module performance.
-
2010-01-01
... AND PLUMS Definitions § 35.4 Carrier. Carrier means any common or private carrier, including, but not being limited to, trucks, rail, airplanes, vessels, tramp or chartered steamers, whether carrying for...
-
Resistance switching induced by electric fields in manganite thin films
International Nuclear Information System (INIS)
Villafuerte, M; Juarez, G; Duhalde, S; Golmar, F; Degreef, C L; Heluani, S P
2007-01-01
In this work, we investigate the polarity-dependent Electric Pulses Induced Resistive (EPIR) switching phenomenon in thin films driven by electric pulses. Thin films of 0.5 Ca 0.5 MnO 3 (manganite) were deposited by PLD on Si substrate. The transport properties at the interface between the film and metallic electrode are characterized in order to study the resistance switching. Sample thermal treatment and electrical field history are important to be considered for get reproducible EPIR effect. Carriers trapping at the interfaces are considered as a possible explanation of our results
-
Renewable carbohydrates are a potential high-density hydrogen carrier
Energy Technology Data Exchange (ETDEWEB)
Zhang, Y.-H. Percival [Biological Systems Engineering Department, 210-A Seitz Hall, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061 (United States); Institute for Critical Technology and Applied Sciences (ICTAS), Virginia Polytechnic Institute and State University, Blacksburg, VA 24061 (United States); DOE BioEnergy Science Center (BESC), Oak Ridge, TN 37831 (United States)
2010-10-15
The possibility of using renewable biomass carbohydrates as a potential high-density hydrogen carrier is discussed here. Gravimetric density of polysaccharides is 14.8 H{sub 2} mass% where water can be recycled from PEM fuel cells or 8.33% H{sub 2} mass% without water recycling; volumetric densities of polysaccharides are >100 kg of H{sup 2}/m{sup 3}. Renewable carbohydrates (e.g., cellulosic materials and starch) are less expensive based on GJ than are other hydrogen carriers, such as hydrocarbons, biodiesel, methanol, ethanol, and ammonia. Biotransformation of carbohydrates to hydrogen by cell-free synthetic (enzymatic) pathway biotransformation (SyPaB) has numerous advantages, such as high product yield (12 H{sub 2}/glucose unit), 100% selectivity, high energy conversion efficiency (122%, based on combustion energy), high-purity hydrogen generated, mild reaction conditions, low-cost of bioreactor, few safety concerns, and nearly no toxicity hazards. Although SyPaB may suffer from current low reaction rates, numerous approaches for accelerating hydrogen production rates are proposed and discussed. Potential applications of carbohydrate-based hydrogen/electricity generation would include hydrogen bioreactors, home-size electricity generators, sugar batteries for portable electronics, sugar-powered passenger vehicles, and so on. Developments in thermostable enzymes as standardized building blocks for cell-free SyPaB projects, use of stable and low-cost biomimetic NAD cofactors, and accelerating reaction rates are among the top research and development priorities. International collaborations are urgently needed to solve the above obstacles within a short time. (author)
-
Ultrafast carrier dynamics in a p-type GaN wafer under different carrier distributions
Fang, Yu; Yang, Junyi; Yang, Yong; Wu, Xingzhi; Xiao, Zhengguo; Zhou, Feng; Song, Yinglin
2016-02-01
The dependence of the carrier distribution on photoexcited carrier dynamics in a p-type Mg-doped GaN (GaN:Mg) wafer were systematically measured by femtosecond transient absorption (TA) spectroscopy. The homogeneity of the carrier distribution was modified by tuning the wavelength of the UV pulse excitation around the band gap of GaN:Mg. The TA kinetics appeared to be biexponential for all carrier distributions, and only the slower component decayed faster as the inhomogeneity of the carrier distribution increased. It was concluded that the faster component (50-70 ps) corresponded to the trap process of holes by the Mg acceptors, and the slower component (150-600 ps) corresponded to the combination of non-radiative surface recombination and intrinsic carrier recombination via dislocations. Moreover, the slower component increased gradually with the incident fluence due to the saturation of surface states.
-
International Nuclear Information System (INIS)
Brewer, Adam S.; Arnold, Michael S.
2014-01-01
Colloidal quantum dots (CQDs) of copper sulfide (Cu 2 S), an earth-abundant semiconductor, have a number of intriguing applications that require knowledge of their electrical properties. Depending on stoichiometry, mobility, and surface treatment, applications include photoabsorbers for solar cells, tunable plasmonics, and counter-electrodes for polysulfate electrolytes. However, there have not been any direct measurements of electrical properties in Cu 2 S CQD thin films. Here, we exchange as synthesized dodecanethiol ligands with short ethanedithiol or ethylenediamine ligands to form thin films of coupled Cu 2 S CQDs. The mobility and carrier concentration were found to vary by ligand treatment from 10 −5 cm 2 /Vs and 10 19 holes/cm 3 for ethanedithiol ligands to 10 −3 cm 2 /Vs and 10 20 holes/cm 3 for ethylenediamine. These results are consistent with the carrier concentrations inferred from sub-bandgap surface-plasmon-resonances measured by infrared spectroscopy. These results will be useful when designing Cu 2 S materials for future applications. - Highlights: • Colloidal Cu2S quantum dots were synthesized and characterized. • Ligand exchange was performed to alter the Cu2S nanocrystal properties. • Ligand exchange was studied using photoluminescence and infrared spectroscopy. • Field effect mobility and carrier concentration were directly measured. • Carrier concentration was compared to estimates from surface plasmon resonances
-
Hot carrier degradation in semiconductor devices
2015-01-01
This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance. • Describes the intricacies of hot carrier degradation in modern semiconductor technologies; • Covers the entire hot carrier degradation phenomenon, including topics such as characterization, carrier transport, carrier-defect interaction, technological impact, circuit impact, etc.; • Enables detailed understanding of carrier transport, interaction of the carrier ensemble with the defect precursors, and an accurate assessment of how the newly created defects imp...
-
Maintainable substrate carrier for electroplating
Chen, Chen-An [Milpitas, CA; Abas, Emmanuel Chua [Laguna, PH; Divino, Edmundo Anida [Cavite, PH; Ermita, Jake Randal G [Laguna, PH; Capulong, Jose Francisco S [Laguna, PH; Castillo, Arnold Villamor [Batangas, PH; Ma,; Xiaobing, Diana [Saratoga, CA
2012-07-17
One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The carrier includes a non-conductive carrier body on which the substrates are placed and conductive lines embedded within the carrier body. A plurality of conductive clip attachment parts are attached in a permanent manner to the conductive lines embedded within the carrier body. A plurality of contact clips are attached in a removable manner to the clip attachment parts. The contact clips hold the substrates in place and conductively connecting the substrates with the conductive lines. Other embodiments, aspects and features are also disclosed.
-
EPA Region 1 - Map Layers for Valley ID Tool (Hosted Feature Service)
The Valley Service Feature Layer hosts spatial data for EPA Region 1's Valley Identification Tool. These layers contain attribute information added by EPA R1 GIS Center to help identify populated valleys:- Fac_2011NEI: Pollution sources selected from the National Emissions Inventory (EPA, 2011).- NE_Towns_PopValleys: New England Town polygons (courtesy USGS), with Population in Valleys and Population Density in Valleys calculated by EPA R1 GIS, from 2010 US Census blocks. - VT_E911: Vermont residences (courtesy VT Center for Geographic Information E-911).
-
Valley photonic crystals for control of spin and topology
Energy Technology Data Exchange (ETDEWEB)
Dong, Jian-Wen; Chen, Xiao-Dong; Zhu, Hanyu; Wang, Yuan; Zhang, Xiang
2016-11-28
Photonic crystals offer unprecedented opportunity for light manipulation and applications in optical communication and sensing1,2,3,4. Exploration of topology in photonic crystals and metamaterials with non-zero gauge field has inspired a number of intriguing optical phenomena such as one-way transport and Weyl points5,6,7,8,9,10. Recently, a new degree of freedom, valley, has been demonstrated in two-dimensional materials11,12,13,14,15. Here, we propose a concept of valley photonic crystals with electromagnetic duality symmetry but broken inversion symmetry. We observe photonic valley Hall effect originating from valley-dependent spin-split bulk bands, even in topologically trivial photonic crystals. Valley–spin locking behaviour results in selective net spin flow inside bulk valley photonic crystals. We also show the independent control of valley and topology in a single system that has been long pursued in electronic systems, resulting in topologically-protected flat edge states. Valley photonic crystals not only offer a route towards the observation of non-trivial states, but also open the way for device applications in integrated photonics and information processing using spin-dependent transportation.
-
M. M. Oleshkevich; Y. V. Makosko
2011-01-01
The paper considers special features of the «Electric House» project where the building is provided with electric power, cold water and sewerage system. The «Electric House» is characterized by ecological cleanness, high reliability in power supply and low capital costs. While running the «Electric House» an annual expenditure of equivalent fuel is increased due to low efficiency of electric power generation at power plants. The profit obtained due to «Electric House» construction is depleted...
-
Centers for Disease Control (CDC) Podcasts
2014-02-04
Dr. Duc Vugia, chief of the Infectious Diseases Branch in the California Department of Public Health, discusses Valley Fever. Created: 2/4/2014 by National Center for Emerging and Zoonotic Infectious Diseases (NCEZID). Date Released: 2/5/2014.
-
Groundwater-flow and land-subsidence model of Antelope Valley, California
Siade, Adam J.; Nishikawa, Tracy; Rewis, Diane L.; Martin, Peter; Phillips, Steven P.
2014-01-01
Antelope Valley, California, is a topographically closed basin in the western part of the Mojave Desert, about 50 miles northeast of Los Angeles. The Antelope Valley groundwater basin is about 940 square miles and is separated from the northern part of Antelope Valley by faults and low-lying hills. Prior to 1972, groundwater provided more than 90 percent of the total water supply in the valley; since 1972, it has provided between 50 and 90 percent. Most groundwater pumping in the valley occurs in the Antelope Valley groundwater basin, which includes the rapidly growing cities of Lancaster and Palmdale. Groundwater-level declines of more than 270 feet in some parts of the groundwater basin have resulted in an increase in pumping lifts, reduced well efficiency, and land subsidence of more than 6 feet in some areas. Future urban growth and limits on the supply of imported water may increase reliance on groundwater.
-
Enhanced valley splitting in monolayer WSe2 due to magnetic exchange field.
Zhao, Chuan; Norden, Tenzin; Zhang, Peiyao; Zhao, Puqin; Cheng, Yingchun; Sun, Fan; Parry, James P; Taheri, Payam; Wang, Jieqiong; Yang, Yihang; Scrace, Thomas; Kang, Kaifei; Yang, Sen; Miao, Guo-Xing; Sabirianov, Renat; Kioseoglou, George; Huang, Wei; Petrou, Athos; Zeng, Hao
2017-08-01
Exploiting the valley degree of freedom to store and manipulate information provides a novel paradigm for future electronics. A monolayer transition-metal dichalcogenide (TMDC) with a broken inversion symmetry possesses two degenerate yet inequivalent valleys, which offers unique opportunities for valley control through the helicity of light. Lifting the valley degeneracy by Zeeman splitting has been demonstrated recently, which may enable valley control by a magnetic field. However, the realized valley splitting is modest (∼0.2 meV T -1 ). Here we show greatly enhanced valley spitting in monolayer WSe 2 , utilizing the interfacial magnetic exchange field (MEF) from a ferromagnetic EuS substrate. A valley splitting of 2.5 meV is demonstrated at 1 T by magnetoreflectance measurements and corresponds to an effective exchange field of ∼12 T. Moreover, the splitting follows the magnetization of EuS, a hallmark of the MEF. Utilizing the MEF of a magnetic insulator can induce magnetic order and valley and spin polarization in TMDCs, which may enable valleytronic and quantum-computing applications.
-
International Nuclear Information System (INIS)
Lee, Youngmin; Lee, Choeun; Shim, Eunhee; Jung, Eiwhan; Lee, Jinyong; Kim, Deukyoung; Lee, Sejoon; Fu, Dejun; Yoon, Hyungdo
2011-01-01
The effects of thermal treatments on the electrical conduction properties for the unintentionally doped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.
-
Energy Technology Data Exchange (ETDEWEB)
Lee, Youngmin; Lee, Choeun; Shim, Eunhee; Jung, Eiwhan; Lee, Jinyong; Kim, Deukyoung; Lee, Sejoon [Dongguk University-Seoul, Seoul (Korea, Republic of); Fu, Dejun [Wuhan University, Wuhan (China); Yoon, Hyungdo [Korea Electronics Technology Institute, Seongnam (Korea, Republic of)
2011-10-15
The effects of thermal treatments on the electrical conduction properties for the unintentionally doped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.
-
Quaternary glaciation of the Tashkurgan Valley, Southeast Pamir
Owen, Lewis A.; Chen, Jie; Hedrick, Kathyrn A.; Caffee, Marc W.; Robinson, Alexander C.; Schoenbohm, Lindsay M.; Yuan, Zhaode; Li, Wenqiao; Imrecke, Daniel B.; Liu, Jinfeng
2012-07-01
The Quaternary glacial history of Tashkurgan valley, in the transition between the Pamir and Karakoram, in Xinjiang Province, China was examined using remote sensing, field mapping, geomorphic analysis of landforms and sediments, and 10Be terrestrial cosmogenic nuclide dating. Moraines were assigned to four glacial stages: 1) the Dabudaer glacial stage that dates to the penultimate glacial cycle and/or earlier, and may represent one or more glaciations; 2) the Tashkurgan glacial stage that dates to early last glacial, most likely Marine Oxygen Isotope Stage (MIS) 4; 3) the Hangdi glacial stage that dates to MIS 2, possibly early MIS 2; and 4) the Kuzigun glacial stage that dates to the MIS 2, possibly the global Last Glacial Maximum, and is younger than the Hangdi glacial stage. Younger moraines and rock glaciers are present at the heads of tributary valleys; but these were inaccessible because they are located close to politically sensitive borders with Pakistan, Afghanistan and Tajikistan. Glaciers during the Dabudaer glacial stage advanced into the central part of the Tashkurgan valley. During the Tashkurgan glacial stages, glaciers advanced several kilometers beyond the mouths of the tributary valleys into the Tashkurgan valley. Glaciers during the Hangdi and Kuzigun glacial stages advanced just beyond the mouths of the tributary valleys. Glaciation in this part of the Himalayan-Tibetan orogen is likely strongly controlled by northern hemisphere climate oscillations, although a monsoonal influence on glaciation cannot be ruled out entirely.
-
Zhang, Xiaoliang; Liu, Jianhua; Johansson, Erik M J
2015-01-28
The utilization of electron-hole pairs (EHPs) generated from multiple excitons in quantum dots (QDs) is of great interest toward efficient photovoltaic devices and other optoelectronic devices; however, extraction of charge carriers remains difficult. Herein, we extract photocharges from Ag2S QDs and investigate the dependence of the electric field on the extraction of charges from multiple exciton generation (MEG). Low toxic Ag2S QDs are directly grown on TiO2 mesoporous substrates by employing the successive ionic layer adsorption and reaction (SILAR) method. The contact between QDs is important for the initial charge separation after MEG and for the carrier transport, and the space between neighbor QDs decreases with more SILAR cycles, resulting in better charge extraction. At the optimal electric field for extraction of photocharges, the results suggest that the threshold energy (hνth) for MEG is 2.41Eg. The results reveal that Ag2S QD is a promising material for efficient extraction of charges from MEG and that QDs prepared by SILAR have an advantageous electrical contact facilitating charge separation and extraction.
-
Khan, M. N.; Shamim, T.
2017-08-01
Hydrogen production by using a three reactor chemical looping reforming (TRCLR) technology is an innovative and attractive process. Fossil fuels such as methane are the feedstocks used. This process is similar to a conventional steam-methane reforming but occurs in three steps utilizing an oxygen carrier. As the oxygen carrier plays an important role, its selection should be done carefully. In this study, two oxygen carrier materials of base metal iron (Fe) and tungsten (W) are analysed using a thermodynamic model of a three reactor chemical looping reforming plant in Aspen plus. The results indicate that iron oxide has moderate oxygen carrying capacity and is cheaper since it is abundantly available. In terms of hydrogen production efficiency, tungsten oxide gives 4% better efficiency than iron oxide. While in terms of electrical power efficiency, iron oxide gives 4.6% better results than tungsten oxide. Overall, a TRCLR system with iron oxide is 2.6% more efficient and is cost effective than the TRCLR system with tungsten oxide.
-
Potential hydrologic characterization wells in Amargosa Valley
International Nuclear Information System (INIS)
Lyles, B.; Mihevc, T.
1994-09-01
More than 500 domestic, agricultural, and monitoring wells were identified in the Amargosa Valley. From this list, 80 wells were identified as potential hydrologic characterization wells, in support of the US Department of Energy (DOE) Underground Test Area/Remedial Investigation and Feasibility Study (UGTA/RIFS). Previous hydrogeologic studies have shown that groundwater flow in the basin is complex and that aquifers may have little lateral continuity. Wells located more than 10 km or so from the Nevada Test Site (NTS) boundary may yield data that are difficult to correlate to sources from the NTS. Also, monitoring well locations should be chosen within the guidelines of a hydrologic conceptual model and monitoring plan. Since these do not exist at this time, recompletion recommendations will be restricted to wells relatively close (approximately 20 km) to the NTS boundary. Recompletion recommendations were made for two abandoned agricultural irrigation wells near the town of Amargosa Valley (previously Lathrop Wells), for two abandoned wildcat oil wells about 10 km southwest of Amargosa Valley, and for Test Well 5 (TW-5), about 10 km east of Amargosa Valley
-
Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers
International Nuclear Information System (INIS)
Shu, G W; Wu, P F; Liu, Y W; Wang, J S; Shen, J L; Lin, T Y; Pong, P J; Chi, G C; Chang, H J; Chen, Y F; Lee, Y C
2006-01-01
We studied the optical and electrical properties of InN epilayers with rapid thermal annealing (RTA). The intensity of the photoluminescence (PL) and the carrier mobility were found to increase as the temperature of RTA was increased. We suggest that the formation of compensating acceptors (indium vacancies) after RTA is responsible for the improvement of the quality in InN. The dependence of the PL emission peak on carrier concentration provides a possible method for estimating the carrier concentration in degenerate InN. (letter to the editor)
-
MX Siting Investigation. Gravity Survey - Sevier Desert Valley, Utah.
1981-01-24
Cheyenne, Wyoming. DMAHTC reduces the data to Simple Bouguer Anomaly (see Section A1.4, Appendix Al.0). The Defense Mapping Agency Aerospace Center...Desert Valley, Utah ......... 2 2 Topographic Setting - Sevier Desert Valley, Utah . 3 LIST OF DRAWINGS Drawing Number 1 Complete Bouguer Anomaly...gravity stations were distributed throughout the valley at an approxi- mate interval of 1.4 miles (2.3 km). Drawing 1 is a Complete Bouguer Anomaly
-
Sutter Buttes-the lone volcano in California's Great Valley
Hausback, Brain P.; Muffler, L.J. Patrick; Clynne, Michael A.
2011-01-01
The volcanic spires of the Sutter Buttes tower 2,000 feet above the farms and fields of California's Great Valley, just 50 miles north-northwest of Sacramento and 11 miles northwest of Yuba City. The only volcano within the valley, the Buttes consist of a central core of volcanic domes surrounded by a large apron of fragmental volcanic debris. Eruptions at the Sutter Buttes occurred in early Pleistocene time, 1.6 to 1.4 million years ago. The Sutter Buttes are not part of the Cascade Range of volcanoes to the north, but instead are related to the volcanoes in the Coast Ranges to the west in the vicinity of Clear Lake, Napa Valley, and Sonoma Valley.
-
Gravity and magnetic data of Midway Valley, southwest Nevada
International Nuclear Information System (INIS)
Ponce, D.A.; Langenheim, V.E.; Sikora, R.F.
1993-01-01
Detailed gravity and ground magnetic data collected along five traverses across Midway Valley on the eastern flank of Yucca Mountain in southwest Nevada are described. These data were collected as part of an effort to evaluate faulting in the vicinity of proposed surface facilities for a potential nuclear waste repository at Yucca Mountain. Geophysical data show that Midway Valley is bounded by large gravity and magnetic anomalies associated with the Bow Ridge and Paintbrush Canyon faults, on the west side of Exile Hill and on the west flank of Fran Ridge, respectively. In addition, Midway Valley itself is characterized by a number of small-amplitude anomalies that probably reflect small-scale faulting beneath Midway Valley
-
27 CFR 9.208 - Snake River Valley.
2010-04-01
... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Snake River Valley. 9.208... Snake River Valley. (a) Name. The name of the viticultural area described in this section is “Snake River Valley”. For purposes of part 4 of this chapter, “Snake River Valley” is a term of viticultural...
-
Subglacial tunnel valleys in the Alpine foreland: an example from Bern, Switzerland
International Nuclear Information System (INIS)
Duerst Stucki, M.; Reber, R.; Schlunegger, F.
2010-01-01
The morphology of the Alpine and adjacent landscapes is directly related to glacial erosion and associated sediment transport. Here we report the effects of glacio-hydrologic erosion on bedrock topography in the Swiss Plateau. Specifically, we identify the presence of subsurface valleys beneath the city of Bern and discuss their genesis. Stratigraphic investigations of more than 4'000 borehole data within a 430 km 2 -large area reveal the presence of a network of >200 m-deep and 1'000 m-wide valleys. They are flat floored with steep sided walls and are filled by Quaternary glacial deposits. The central valley beneath Bern is straight and oriented towards the NNW, with valley flanks more than 20 o steep. The valley bottom has an irregular undulating profile along the thalweg, with differences between sills and hollows higher than 50-100 m over a reach of 4 km length. Approximately 500 m high bedrock highlands flank the valley network. The highlands are dissected by up to 80 m-deep and 500 m-broad hanging valleys that currently drain away from the axis of the main valley. We interpret the valleys beneath the city of Bern to be a tunnel valley network which originated from subglacial erosion by melt water. The highland valleys served as proglacial meltwater paths and are hanging with respect to the trunk system, indicating that these incipient highland systems as well as the main gorge beneath Bern formed by glacial melt water under pressure. (authors)
-
Gate-tunable valley-spin filtering in silicene with magnetic barrier
Energy Technology Data Exchange (ETDEWEB)
Wu, X. Q., E-mail: xianqiangzhe@126.com [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Meng, H. [School of Physics and Telecommunication Engineering, Shanxi University of Technology, Hanzhong 723001 (China)
2015-05-28
We theoretically study the valley- and spin-resolved scattering through magnetic barrier in a one layer thick silicene, using the mode-matching method for the Dirac equation. We show that the spin-valley filtering effect can be achieved and can also be tuned completely through both a top and bottom gate. Moreover, when reversing the sign of the staggered potential, we find the direction of the valley polarization is switched while the direction of spin polarization is unchanged. These results can provide some meaningful information to design valley valve residing on silicene.
-
VALDRIFT 1.0: A valley atmospheric dispersion model with deposition
Energy Technology Data Exchange (ETDEWEB)
Allwine, K.J.; Bian, X.; Whiteman, C.D.
1995-05-01
VALDRIFT version 1.0 is an atmospheric transport and diffusion model for use in well-defined mountain valleys. It is designed to determine the extent of ddft from aedal pesticide spraying activities, but can also be applied to estimate the transport and diffusion of various air pollutants in valleys. The model is phenomenological -- that is, the dominant meteorological processes goveming the behavior of the valley atmosphere are formulated explicitly in the model, albeit in a highly parameterized fashion. The key meteorological processes treated are: (1) nonsteady and nonhomogeneous along-valley winds and turbulent diffusivities, (2) convective boundary layer growth, (3) inversion descent, (4) noctumal temperature inversion breakup, and (5) subsidence. The model is applicable under relatively cloud-free, undisturbed synoptic conditions and is configured to operate through one diumal cycle for a single valley. The inputs required are the valley topographical characteristics, pesticide release rate as a function of time and space, along-valley wind speed as a function of time and space, temperature inversion characteristics at sunrise, and sensible heat flux as a function of time following sunrise. Default values are provided for certain inputs in the absence of detailed observations. The outputs are three-dimensional air concentration and ground-level deposition fields as a function of time.
-
Valley-selective optical Stark effect probed by Kerr rotation
LaMountain, Trevor; Bergeron, Hadallia; Balla, Itamar; Stanev, Teodor K.; Hersam, Mark C.; Stern, Nathaniel P.
2018-01-01
The ability to monitor and control distinct states is at the heart of emerging quantum technologies. The valley pseudospin in transition metal dichalcogenide (TMDC) monolayers is a promising degree of freedom for such control, with the optical Stark effect allowing for valley-selective manipulation of energy levels in WS2 and WSe2 using ultrafast optical pulses. Despite these advances, understanding of valley-sensitive optical Stark shifts in TMDCs has been limited by reflectance-based detection methods where the signal is small and prone to background effects. More sensitive polarization-based spectroscopy is required to better probe ultrafast Stark shifts for all-optical manipulation of valley energy levels. Here, we show time-resolved Kerr rotation to be a more sensitive probe of the valley-selective optical Stark effect in monolayer TMDCs. Compared to the established time-resolved reflectance methods, Kerr rotation is less sensitive to background effects. Kerr rotation provides a fivefold improvement in the signal-to-noise ratio of the Stark effect optical signal and a more precise estimate of the energy shift. This increased sensitivity allows for observation of an optical Stark shift in monolayer MoS2 that exhibits both valley and energy selectivity, demonstrating the promise of this method for investigating this effect in other layered materials and heterostructures.
-
Modelling of charge carrier transport in conjugated polymers doped by polar additives
Czech Academy of Sciences Publication Activity Database
Toman, Petr; Nešpůrek, Stanislav; Bartkowiak, W.
2009-01-01
Roč. 27, č. 3 (2009), s. 797-812 ISSN 0137-1339. [International Conference on Electrical and Related Properties of Organic Solids /11./. Piechowice, 13.07.2008-17.07.2008] R&D Projects: GA ČR GA203/06/0285; GA AV ČR KAN400720701; GA MŠk MEB050815 Institutional research plan: CEZ:AV0Z40500505 Keywords : conjugated polymers * charge carrier transport * molecular electronics Subject RIV: CD - Macromolecular Chemistry Impact factor: 0.384, year: 2009
-
Reactive tunnel junctions in electrically driven plasmonic nanorod metamaterials
Wang, Pan; Krasavin, Alexey V.; Nasir, Mazhar E.; Dickson, Wayne; Zayats, Anatoly V.
2018-02-01
Non-equilibrium hot carriers formed near the interfaces of semiconductors or metals play a crucial role in chemical catalysis and optoelectronic processes. In addition to optical illumination, an efficient way to generate hot carriers is by excitation with tunnelling electrons. Here, we show that the generation of hot electrons makes the nanoscale tunnel junctions highly reactive and facilitates strongly confined chemical reactions that can, in turn, modulate the tunnelling processes. We designed a device containing an array of electrically driven plasmonic nanorods with up to 1011 tunnel junctions per square centimetre, which demonstrates hot-electron activation of oxidation and reduction reactions in the junctions, induced by the presence of O2 and H2 molecules, respectively. The kinetics of the reactions can be monitored in situ following the radiative decay of tunnelling-induced surface plasmons. This electrically driven plasmonic nanorod metamaterial platform can be useful for the development of nanoscale chemical and optoelectronic devices based on electron tunnelling.
-
Electrical properties of FeGa2S4
International Nuclear Information System (INIS)
Niftiev, N.N.; Alidzhanov, M.A.; Tagiev, O.B.; Mamedov, F.M.
2004-01-01
Temperature dependence of the electrical conductivity and current-voltage characteristics (CVCs) of FeGa 2 S 4 crystals have been studied. It has been shown that the current in the nonlinear range of CVCs is caused by the field effect. The activation energy of carriers and the trap concentrations have been determined
-
Four newly recorded species of Dryopteridaceae from Kashmir valley, India
Directory of Open Access Journals (Sweden)
SHAKOOR AHMAD MIR
2014-04-01
Full Text Available Mir SA, Mishra AK, Reshi ZA, Sharma MP. 2014. Four newly recorded species of Dryopteridaceae from Kashmir valley, India. Biodiversitas 15: 6-11. Habitat diversity, elevation, cloud cover, rainfall, seasonal and temperature variations have created many ideal sites for the luxuriant growth of pteridophytes in the Kashmir valley, yet all the regions of the valley have not been surveyed. In Kashmir valley the family Dryopteridaceae is represented by 31 species. During the recent extensive field surveys of Shopian district four more species viz., Dryopteris caroli-hopei Fraser-Jenkins, Dryopteris blanfordii subsp. nigrosquamosa (Ching Fraser-Jenkins, Dryopteris pulvinulifera (Bedd. Kuntze and Polystichum Nepalense (Spreng C. Chr. have been recorded for the first time from the valley. The taxonomic description, synonyms, distribution and photographs of each species are given in this article.
-
International Nuclear Information System (INIS)
Kryuchkov, S V; Kukhar’, E I; Zav’yalov, D V
2013-01-01
The semiclassical theory of the dynamics of the charge carriers in graphene and in graphene superlattices exposed to a high-frequency electric field is developed. The dispersion law of the solid averaged over the period of the high-frequency electric field is found with the Kapitza method. The band gap in graphene is shown to arise under a high-frequency electric field polarized circularly. The effective mass of charge carriers in the center of the Brillouin band of the graphene superlattice is found to change sign under certain values of the amplitude of the high-frequency field. These values are shown to determine the bounds of the regions of the electromagnetic 2π-pulse stability. The dynamics of the π-pulse in a graphene superlattice is studied. (paper)
-
From electricity smart grids to smart energy systems
DEFF Research Database (Denmark)
Lund, Henrik; Andersen, Anders N.; Østergaard, Poul Alberg
2012-01-01
, electricitysmartgrids must be coordinated with the utilisation of renewable energy being converted into other forms of carriers than electricity including heat and biofuels as well as energy conservation and efficiency improvements, such as CHP and improved efficiencies e.g. in the form of fuel cells. All such measures...... such measures are combined with energy conservation and system efficiency improvements. This article illustrates why electricitysmartgrids should be seen as part of overall smartenergysystems and emphasises the inclusion of flexible CHP production in the electricity balancing and grid stabilisation. Furthermore...
-
Ventilation potential during the emissions survey in Toluca Valley, Mexico
Ruiz Angulo, A.; Peralta, O.; Jurado, O. E.; Ortinez, A.; Grutter de la Mora, M.; Rivera, C.; Gutierrez, W.; Gonzalez, E.
2017-12-01
During the late-spring early-summer measurements of emissions and pollutants were carried out during a survey campaign at four different locations within the Toluca Valley. The current emissions inventory typically estimates the generation of pollutants based on pre-estimated values representing an entire sector function of their activities. However, those factors are not always based direct measurements. The emissions from the Toluca Valley are rather large and they could affect the air quality of Mexico City Valley. The air masses interchange between those two valleys is not very well understood; however, based on the measurements obtained during the 3 months campaign we looked carefully at the daily variability of the wind finding a clear signal for mountain-valley breeze. The ventilation coefficient is estimated and the correlations with the concentrations at the 4 locations and in a far away station in Mexico City are addressed in this work. Finally, we discuss the implication of the ventilation capacity in air quality for the system of Valleys that include Mexico City.
-
γ-irradiation effect on the electrical properties on n-Ge with nonuniform distribution of impurity
International Nuclear Information System (INIS)
Antonenko, R.S.; Shakhovtsov, V.I.; Shakhovtsova, S.I.
1975-01-01
There has been experimentally investigated the effect of γ-irradiation on the electrical properties of germanium alloyed with antimony, when the alloying element is non-uniformly distributed. It is shown that in response to γ-irradiation the mobility of the current carriers is reduced, whereas the temperature dependence is changed. At the radiation doses providing for a high degree of compensation the temperature dependence of the current carrier mobility changes abnormaly the volt-ampere characteristics of the samples within the 'non-heating' electric field range are linear up to the radiation doses corresponding to the conductivity conversion. The experimental results are discussed from the point of view of the conceptions pertaining to current-carrying ability of a heterogeneous material. There has been drawn up a conclusion that the degree of compensation substantially affects the electrical properties of a semiconductor
-
Mackenzie Valley Pipeline market demand, supply, and infrastructure analysis : final report
International Nuclear Information System (INIS)
2004-01-01
Mackenzie Valley Pipeline Co-Venturers is a consortium of petroleum companies proposing to construct a 1,400 km long, large-diameter, high-pressure natural gas transmission pipeline from the northwestern edge of the Northwest Territories to the Alberta-Northwest Territories border. The Mackenzie Valley Pipeline will bring natural gas from the Mackenzie Delta region to markets in Alberta, central and eastern Canada and the United States. Navigant Consulting Ltd. prepared this assessment of the long-term market need for natural gas produced from the Mackenzie Delta. It presents an analysis of gas demand, supply and infrastructure. Three sensitivity cases were examined, incorporating different assumptions about the initial capacity of the pipeline, potential expansion of its capacity and different levels of gas demand in Canada and the United States. The report indicates that gas markets in North America support construction of the proposed 34 million cubic metre per day pipeline in the 2009 timeframe, with possible expansion in 2015 and 2020. It also indicates that there will be enough capacity on the intra-Alberta gas transmission system to accommodate the projected deliveries of Mackenzie Delta gas. The increase in gas demand is due to an increase in residential and commercial gas consumption, electric power generation and the energy intensive bitumen extraction and processing activities in the Alberta oil sands industry. 36 tabs., 56 figs
-
Fitness-valley crossing with generalized parent-offspring transmission.
Osmond, Matthew M; Otto, Sarah P
2015-11-01
Simple and ubiquitous gene interactions create rugged fitness landscapes composed of coadapted gene complexes separated by "valleys" of low fitness. Crossing such fitness valleys allows a population to escape suboptimal local fitness peaks to become better adapted. This is the premise of Sewall Wright's shifting balance process. Here we generalize the theory of fitness-valley crossing in the two-locus, bi-allelic case by allowing bias in parent-offspring transmission. This generalization extends the existing mathematical framework to genetic systems with segregation distortion and uniparental inheritance. Our results are also flexible enough to provide insight into shifts between alternate stable states in cultural systems with "transmission valleys". Using a semi-deterministic analysis and a stochastic diffusion approximation, we focus on the limiting step in valley crossing: the first appearance of the genotype on the new fitness peak whose lineage will eventually fix. We then apply our results to specific cases of segregation distortion, uniparental inheritance, and cultural transmission. Segregation distortion favouring mutant alleles facilitates crossing most when recombination and mutation are rare, i.e., scenarios where crossing is otherwise unlikely. Interactions with more mutable genes (e.g., uniparental inherited cytoplasmic elements) substantially reduce crossing times. Despite component traits being passed on poorly in the previous cultural background, small advantages in the transmission of a new combination of cultural traits can greatly facilitate a cultural transition. While peak shifts are unlikely under many of the common assumptions of population genetic theory, relaxing some of these assumptions can promote fitness-valley crossing. Copyright © 2015 Elsevier Inc. All rights reserved.
-
2010-01-01
... 7 Agriculture 2 2010-01-01 2010-01-01 false Carrier. 33.4 Section 33.4 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing... ISSUED UNDER AUTHORITY OF THE EXPORT APPLE ACT Definitions § 33.4 Carrier. Carrier means any common or...
-
Low-cost carriers fare competition effect
Carmona Benitez, R.B.; Lodewijks, G.
2010-01-01
This paper examines the effects that low-cost carriers (LCC’s) produce when entering new routes operated only by full-service carriers (FSC’s) and routes operated by low-cost carriers in competition with full-service carriers. A mathematical model has been developed to determine what routes should
-
Subglacial tunnel valleys in the Alpine foreland: an example from Bern, Switzerland
Energy Technology Data Exchange (ETDEWEB)
Duerst Stucki, M.; Reber, R.; Schlunegger, F.
2010-12-15
The morphology of the Alpine and adjacent landscapes is directly related to glacial erosion and associated sediment transport. Here we report the effects of glacio-hydrologic erosion on bedrock topography in the Swiss Plateau. Specifically, we identify the presence of subsurface valleys beneath the city of Bern and discuss their genesis. Stratigraphic investigations of more than 4'000 borehole data within a 430 km{sup 2}-large area reveal the presence of a network of >200 m-deep and 1'000 m-wide valleys. They are flat floored with steep sided walls and are filled by Quaternary glacial deposits. The central valley beneath Bern is straight and oriented towards the NNW, with valley flanks more than 20 {sup o} steep. The valley bottom has an irregular undulating profile along the thalweg, with differences between sills and hollows higher than 50-100 m over a reach of 4 km length. Approximately 500 m high bedrock highlands flank the valley network. The highlands are dissected by up to 80 m-deep and 500 m-broad hanging valleys that currently drain away from the axis of the main valley. We interpret the valleys beneath the city of Bern to be a tunnel valley network which originated from subglacial erosion by melt water. The highland valleys served as proglacial meltwater paths and are hanging with respect to the trunk system, indicating that these incipient highland systems as well as the main gorge beneath Bern formed by glacial melt water under pressure. (authors)
-
Faloona, I. C.; Conley, S. A.; Caputi, D.; Trousdell, J.; Chiao, S.; Eiserloh, A. J., Jr.; Clark, J.; Iraci, L. T.; Yates, E. L.; Marrero, J. E.; Ryoo, J. M.; McNamara, M. E.
2016-12-01
The San Joaquin Valley of California is wide ( 75 km) and long ( 400 km), and is situated under strong atmospheric subsidence due, in part, to the proximity of the midlatitude anticyclone of the Pacific High. The capping effect of this subsidence is especially prominent during the warm season when ground level ozone is a serious air quality concern across the region. While relatively clean marine boundary layer air is primarily funneled into the valley below the strong subsidence inversion at significant gaps in the upwind Coast Range mountains, airflow aloft also spills over these barriers and mixes into the valley from above. Because this transmountain flow occurs under the influence of synoptic subsidence it tends to present discrete, laminar sheets of differing air composition above the valley boundary layer. Meanwhile, although the boundary layers tend to remain shallow due to the prevailing subsidence, orographic and anabatic venting of valley boundary layer air around the basin whips up a complex admixture of regional air masses into a "buffer layer" just above the boundary layer (zi) and below the lower free troposphere. We present scalar data of widely varying lifetimes including ozone, methane, NOx, and thermodynamic observations from upwind and within the San Joaquin Valley to better explain this layering and its subsequent erosion into the valley boundary layer via entrainment. Data collected at a mountaintop monitoring station on Chews Ridge in the Coast Range, by coastal ozonesondes, and aircraft are analyzed to document the dynamic layering processes around the complex terrain surrounding the valley. Particular emphasis will be made on observational methods whereby distal ozone can be distinguished from the regional ozone to better understand the influence of exogenous sources on air quality in the valley.
-
2017-08-01
This FMCSA-sponsored research investigated the claim that motor carriers have a substantial number of crashes in their own records that are not contained in the Motor Carrier Management Information System (MCMIS) crash file. Based on the results of t...
-
Geomorphological hazards in Swat valley, Pakistan
International Nuclear Information System (INIS)
Usman, A.
1999-01-01
This study attempts to describe, interpret and analyze, in depth, the varied geomorphological hazards and their impacts prevailing in the swat valley locate in the northern hilly and mountainous regions of Pakistan. The hills and mountains re zones of high geomorphological activity with rapid rates of weathering, active tectonic activities, abundant precipitation, rapid runoff and heavy sediment transport. Due to the varied topography, lithology, steep slope, erodible soil, heavy winter snowfall and intensive rainfall in the spring and summer seasons, several kinds of geomorphological hazards, such as geomorphic gravitational hazards, Fluvial hazards, Glacial hazards, Geo tectonic hazards, are occurring frequently in swat valley. Amongst them, geomorphic gravitational hazards, such as rock fall rock slide, debris slide mud flow avalanches, are major hazards in mountains and hills while fluvial hazards and sedimentation are mainly confined to the alluvial plain and lowlands of the valley. The Getechtonic hazards, on the other hand, have wide spread distribution in the valley the magnitude and occurrence of each king of hazard is thus, varied according to intensity of process and physical geographic environment. This paper discusses the type distribution and damage due to the various geomorphological hazards and their reduction treatments. The study would to be of particular importance and interest to both natural and social scientists, as well as planner, environmentalists and decision-makers for successful developmental interventions in the region. (author)
-
Nonradiative recombination onto shallow bound states in confined systems in electric field
International Nuclear Information System (INIS)
Sinyavskij, Eh.P.; Rusanov, A.M.
1999-01-01
A study has been made of the one-phonon recombination of carriers onto shallow impurity states in parabolic quantum wells in the longitudinal electric field. It has been found that processes of the one-phonon recombination in confined systems occur in a more active way the in a bulk material.The possibility of electrically induced one-quantum transitions in confined systems is being discussed
-
A new Proposal to Mexico Valley Zonification
Flores-Estrella, H. C.; Yussim, S.; Lomnitz, C.
2004-12-01
The effects of the Michoacan earthquake (19th September, 1985, Mw 8.1) in Mexico City caused a significant change in the political, social and scientific history, as it was considered the worst seismic disaster ever lived in Mexico. Since then, numerous efforts have been made to understand and determine the parameters that caused the special features registered. One of these efforts had began on 1960 with the work by Marsal and Masari, who published the Mexico Valley seismological and geotechnical zonification (1969), based on gravimetric and shallow borehole data. In this work, we present a revision of the studies that proposed the zonification, a description of the valley geology, and basing on it we propose a new zonification for Mexico Valley.
-
Hybrid spin and valley quantum computing with singlet-triplet qubits.
Rohling, Niklas; Russ, Maximilian; Burkard, Guido
2014-10-24
The valley degree of freedom in the electronic band structure of silicon, graphene, and other materials is often considered to be an obstacle for quantum computing (QC) based on electron spins in quantum dots. Here we show that control over the valley state opens new possibilities for quantum information processing. Combining qubits encoded in the singlet-triplet subspace of spin and valley states allows for universal QC using a universal two-qubit gate directly provided by the exchange interaction. We show how spin and valley qubits can be separated in order to allow for single-qubit rotations.
-
Huynh, K. K.; Tanabe, Y.; Urata, T.; Oguro, H.; Heguri, S.; Watanabe, K.; Tanigaki, K.
2014-10-01
An SDW antiferromagnetic (SDW-AF) low-temperature phase transition is generally observed and the AF spin fluctuations are considered to play an important role for the superconductivity pairing mechanism in FeAs superconductors. However, a similar magnetic phase transition is not observed in FeSe superconductors, which has caused considerable discussion. We report on the intrinsic electronic states of FeSe as elucidated by electric transport measurements under magnetic fields using a high quality single crystal. A mobility spectrum analysis, an ab initio method that does not make assumptions on the transport parameters in a multicarrier system, provides very important and clear evidence that another hidden order, most likely the symmetry broken from the tetragonal C4 symmetry to the C2 symmetry nematicity associated with the selective d -orbital splitting, exists in the case of superconducting FeSe other than the AF magnetic order spin fluctuations. The intrinsic low-temperature phase in FeSe is in the almost compensated semimetallic states but is additionally accompanied by Dirac cone-like ultrafast electrons ˜104cm2(VS) -1 as minority carriers.
-
Graphene valley pseudospin filter using an extended line defect
Gunlycke, Daniel; White, Carter
2011-03-01
Although graphene exhibits excellent electron and thermal transport properties, it does not have an intrinsic band gap, required to use graphene as a replacement material for silicon and other semiconductors in conventional electronics. The band structure of graphene with its two cones near the Fermi level, however, offers opportunities to develop non-traditional applications. One such avenue is to exploit the valley degeneracy in graphene to develop valleytronics. A central component in valleytronics is the valley filter, just as the spin filter is central in spintronics. Herein, we present a two-dimensional valley filter based on scattering of electrons and holes off a recently observed extended line defect [Nat. Nanotech.5, 326 (2010)] within graphene. The transmission probability depends strongly on the valley pseudospin and the angle of incidence of the incident quasiparticles. Quasiparticles arriving at the line defect at a high angle of incidence lead to a valley polarization of the transmitted beam that is near 100 percent. This work was supported by ONR, directly and through NRL.
-
Electrical characterization of proton irradiated p+-n-n+ Si diode
International Nuclear Information System (INIS)
Kim, J.H.; Lee, D.U.; Kim, E.K.; Bae, Y.H.
2006-01-01
Electrical characterization of p + -n-n + Si power electric diodes was done with proton irradiation. The kinetic energies of irradiated protons were 2.32, 2.55 and 2.97MeV, and for each energy condition, doses of 1x10 11 , 1x10 12 and 1x10 13 cm -2 were given. By modulating the kinetic energy, the proton penetration depth into Si crystal could be adjusted to the range of 55-90μm, and then controlled to the special depth regions such as junction region, depletion region and neutral region over the depletion layer in the p + -n-n + diode structure. Defects produced by the proton irradiation affected to electrical property of the Si diode because of their carrier trapping, and then the reverse recovery time was improved from 240 to 50ns. It appeared that the defect states with activation energies of 0.47 and 0.54eV may be responsible for the decrease of the minority carrier lifetime in the proton-irradiated diode with 2.97MeV energy and 1x10 13 cm -2 doses
-
Carrier transport uphill. I. General
DEFF Research Database (Denmark)
Rosenberg, T; Wilbrandt, W
1963-01-01
A quantitative treatment of a carrier pump operating with two carrier forms C and Z is presented. Asymmetric metabolic reactions are assumed to transform Z into C on one and C into Z on the other side of the membrane, establishing a carrier cycle. The kinetical consequences of this mechanism...
-
First in situ measurement of electric field fluctuations during strong spread F in the Indian zone
Directory of Open Access Journals (Sweden)
H. S. S. Sinha
2000-05-01
Full Text Available An RH-560 rocket flight was conducted from Sriharikota rocket range (SHAR (14°N, 80°E, dip 14°N along with other experiments, as a part of equatorial spread F (ESF campaign, to study the nature of irregularities in electric field and electron density. The rocket was launched at 2130 local time (LT and it attained an apogee of 348 km. Results of vertical and horizontal electric field fluctuations are presented here. Scale sizes of electric field fluctuations were measured in the vertical direction only. Strong ESF irregularities were observed in three regions, viz., 160-190 km, 210-257 km and 290-330 km. Some of the valley region vertical electric field irregularities (at 165 km and 168 km, in the intermediate-scale size range, observed during this flight, show spectral peak at kilometer scales and can be interpreted in terms of the image striation theory suggested by Vickrey et al. The irregularities at 176 km do not exhibit any peak at kilometer scales and appear to be of a new type. Scale sizes of vertical electric field fluctuations showed a decrease with increasing altitude. The most prominent scales were of the order of a few kilometers around 170 km and a few hundred meters around 310 km. Spectra of intermediate-scale vertical electric field fluctuations below the base of the F region (210-257 km showed a tendency to become slightly flatter (spectral index n = -2.1 ± 0.7 as compared to the valley region (n = -3.6 ± 0.8 and the region below the F peak (n = -2.8 ± 0.5. Correlation analysis of the electron density and vertical electric field fluctuations suggests the presence of a sheared flow of current in 160-330 km region.Keywords: Ionosphere (Electric fields and currents; ionospheric irregularities; Radio science (ionospheric physics
-
Hydrological responses to channelization and the formation of valley plugs and shoals
Pierce, Aaron R.; King, Sammy L.
2017-01-01
Rehabilitation of floodplain systems focuses on restoring interactions between the fluvial system and floodplain, however, there is a paucity of information on the effects of valley plugs and shoals on floodplain hydrological processes. We investigated hydrologic regimes in floodplains at three valley plug sites, two shoal sites, and three unchannelized sites. Valley plug sites had altered surface and sub-surface hydrology relative to unchannelized sites, while only sub-surface hydrology was affected at shoal sites. Some of the changes were unexpected, such as reduced flood duration and flood depth in floodplains associated with valley plugs. Our results emphasize the variability associated with hydrologic processes around valley plugs and our rudimentary understanding of the effects associated with these geomorphic features. Water table levels were lower at valley plug sites compared to unchannelized sites, however, valley plug sites had a greater proportion of days when water table inundation was above mean root collar depth than both shoal and unchannelized sites as a result of lower root collar depths and higher deposition rates. This study has provided evidence that valley plugs can affect both surface and sub-surface hydrology in different ways than previously thought and illustrates the variability in hydrological responses to valley plug formation.
-
Emissions from coal-fired electric stations : environmental health effects and reduction options
International Nuclear Information System (INIS)
Love, P.; Lourie, B.; Pengelly, D.; Labatt, S.; Ogilvie, K.; Kelly, B.
1998-01-01
Findings of a study on the environmental effects of current emissions from coal-fired electric stations were summarized. Current and projected emissions from coal-fired electric stations for five emission reduction scenarios were estimated for Ontario, Eastern Canada, Ohio Valley/Great Lakes, and the U.S. northeast regions. Coal-fired electric stations generate a wide range of environmentally significant air emissions. The five pollutants selected - sulphur dioxide, nitrogen oxides, particulate matter (less than 10 micrometres in size), mercury, and carbon dioxide - are considered to impact most on environmental health. This report focused on 312 coal-fired electric stations in the regions named above. They were selected based on the likelihood that long-range transport of the emissions from these coal-fired utilities would have an impact on human health and the environment. 55 refs., 10 tabs., 8 figs
-
Hydrogen as an energy carrier and its production by nuclear power
International Nuclear Information System (INIS)
1999-05-01
The impact of power generation on environment is becoming an ever increasing concern in decision making when considering the energy options and power systems required by a country in order to sustain its economic growth and development. Hydrogen is a strong emerging candidate with a significant role as a clean, environmentally benign and safe to handle major energy carrier in the future. Its enhanced utilization in distributed power generation as well as in propulsion systems for mobile applications will help to significantly mitigate the strong negative effects on the environment. It ia also the nuclear power that will be of utmost importance in the energy supply of many countries over the next decades. The development of new, innovative reactor concepts utilizing passive safety features for process heat and electricity generation are considered by many to play a substantial role in the world's energy future in helping to reduce greenhouse gas emissions. This report produced by IAEA documents past and current activities in Member States in the development of hydrogen production as an energy carrier and its corresponding production through the use of nuclear power. It provides an introduction to nuclear technology as a means of producing hydrogen or other upgraded fuels and to the energy carries hydrogen and its main fields of application. Emphasis is placed on high-temperature reactor technology which can achieve the simultaneous generation of electricity and the production of high-temperature process heat
-
Renewable Hydrogen Carrier — Carbohydrate: Constructing the Carbon-Neutral Carbohydrate Economy
Directory of Open Access Journals (Sweden)
Y.-H. Percival Zhang
2011-01-01
Full Text Available The hydrogen economy presents an appealing energy future but its implementation must solve numerous problems ranging from low-cost sustainable production, high-density storage, costly infrastructure, to eliminating safety concern. The use of renewable carbohydrate as a high-density hydrogen carrier and energy source for hydrogen production is possible due to emerging cell-free synthetic biology technology—cell-free synthetic pathway biotransformation (SyPaB. Assembly of numerous enzymes and co-enzymes in vitro can create complicated set of biological reactions or pathways that microorganisms or catalysts cannot complete, for example, C6H10O5 (aq + 7 H2O (l à 12 H2 (g + 6 CO2 (g (PLoS One 2007, 2:e456. Thanks to 100% selectivity of enzymes, modest reaction conditions, and high-purity of generated hydrogen, carbohydrate is a promising hydrogen carrier for end users. Gravimetric density of carbohydrate is 14.8 H2 mass% if water can be recycled from proton exchange membrane fuel cells or 8.33% H2 mass% without water recycling. Renewable carbohydrate can be isolated from plant biomass or would be produced from a combination of solar electricity/hydrogen and carbon dioxide fixation mediated by high-efficiency artificial photosynthesis mediated by SyPaB. The construction of this carbon-neutral carbohydrate economy would address numerous sustainability challenges, such as electricity and hydrogen storage, CO2 fixation and long-term storage, water conservation, transportation fuel production, plus feed and food production.
-
Seasonal storage and alternative carriers: A flexible hydrogen supply chain model
International Nuclear Information System (INIS)
Reuß, M.; Grube, T.; Robinius, M.; Preuster, P.; Wasserscheid, P.; Stolten, D.
2017-01-01
Highlights: •Techno-economic model of future hydrogen supply chains. •Implementation of liquid organic hydrogen carriers into a hydrogen mobility analysis. •Consideration of large-scale seasonal storage for fluctuating renewable hydrogen production. •Implementation of different technologies for hydrogen storage and transportation. -- Abstract: A viable hydrogen infrastructure is one of the main challenges for fuel cells in mobile applications. Several studies have investigated the most cost-efficient hydrogen supply chain structure, with a focus on hydrogen transportation. However, supply chain models based on hydrogen produced by electrolysis require additional seasonal hydrogen storage capacity to close the gap between fluctuation in renewable generation from surplus electricity and fuelling station demand. To address this issue, we developed a model that draws on and extends approaches in the literature with respect to long-term storage. Thus, we analyse Liquid Organic Hydrogen Carriers (LOHC) and show their potential impact on future hydrogen mobility. We demonstrate that LOHC-based pathways are highly promising especially for smaller-scale hydrogen demand and if storage in salt caverns remains uncompetitive, but emit more greenhouse gases (GHG) than other gaseous or hydrogen ones. Liquid hydrogen as a seasonal storage medium offers no advantage compared to LOHC or cavern storage since lower electricity prices for flexible operation cannot balance the investment costs of liquefaction plants. A well-to-wheel analysis indicates that all investigated pathways have less than 30% GHG-emissions compared to conventional fossil fuel pathways within a European framework.
-
Hydrogen as an energy carrier and its production by nuclear power
Energy Technology Data Exchange (ETDEWEB)
NONE
1999-05-01
The impact of power generation on environment is becoming an ever increasing concern in decision making when considering the energy options and power systems required by a country in order to sustain its economic growth and development. Hydrogen is a strong emerging candidate with a significant role as a clean, environmentally benign and safe to handle major energy carrier in the future. Its enhanced utilization in distributed power generation as well as in propulsion systems for mobile applications will help to significantly mitigate the strong negative effects on the environment. It ia also the nuclear power that will be of utmost importance in the energy supply of many countries over the next decades. The development of new, innovative reactor concepts utilizing passive safety features for process heat and electricity generation are considered by many to play a substantial role in the world`s energy future in helping to reduce greenhouse gas emissions. This report produced by IAEA documents past and current activities in Member States in the development of hydrogen production as an energy carrier and its corresponding production through the use of nuclear power. It provides an introduction to nuclear technology as a means of producing hydrogen or other upgraded fuels and to the energy carries hydrogen and its main fields of application. Emphasis is placed on high-temperature reactor technology which can achieve the simultaneous generation of electricity and the production of high-temperature process heat Refs, figs, tabs
-
Coupling behaviors of graphene/SiO2/Si structure with external electric field
Onishi, Koichi; Kirimoto, Kenta; Sun, Yong
2017-02-01
A traveling electric field in surface acoustic wave was introduced into the graphene/SiO2/Si sample in the temperature range of 15 K to 300 K. The coupling behaviors between the sample and the electric field were analyzed using two parameters, the intensity attenuation and time delay of the traveling-wave. The attenuation originates from Joule heat of the moving carriers, and the delay of the traveling-wave was due to electrical resistances of the fixed charge and the moving carriers with low mobility in the sample. The attenuation of the external electric field was observed in both Si crystal and graphene films in the temperature range. A large attenuation around 190 K, which depends on the strength of external electric field, was confirmed for the Si crystal. But, no significant temperature and field dependences of the attenuation in the graphene films were detected. On the other hand, the delay of the traveling-wave due to ionic scattering at low temperature side was observed in the Si crystal, but cannot be detected in the films of the mono-, bi- and penta-layer graphene with high conductivities. Also, it was indicated in this study that skin depth of the graphene film was less than thickness of two graphene atomic layers in the temperature range.
-
Optimal Scheduling of a Multi-Carrier Energy Hub Supplemented By Battery Energy Storage Systems
DEFF Research Database (Denmark)
Javadi, Mohammad Sadegh; Anvari-Moghaddam, Amjad; Guerrero, Josep M.
2017-01-01
This paper introduces a management model for optimal scheduling of a multi-carrier energy hub. In the proposed hub, three types of assets are considered: dispersed generating systems (DGs) such as micro-combined heat and power (mCHP) units, storage devices such as battery-based electrical storage...... systems (ESSs), and heating/cooling devices such as electrical heater, heat-pumps and absorption chillers. The optimal scheduling and management of the examined energy hub assets in line with electrical transactions with distribution network is modeled as a mixed-integer non-linear optimization problem....... In this regard, optimal operating points of DG units as well as ESSs are calculated based on a cost-effective strategy. Degradation cost of ESSs is also taken into consideration for short-term scheduling. Simulation results demonstrate that including well-planned energy storage options together with optimal...
-
The California Valley grassland
Keeley, J.E.; Schoenherr, Allan A.
1990-01-01
Grasslands are distributed throughout California from Oregon to Baja California Norte and from the coast to the desert (Brown 1982) (Figure 1). This review will focus on the dominant formation in cismontane California, a community referred to as Valley Grassland (Munz 1959). Today, Valley Grassland is dominated by non-native annual grasses in genera such as Avena (wild oat), Bromus (brome grass), and Hordeum (barley), and is often referred to as the California annual grassland. On localized sites, native perennial bunchgrasses such as Stipa pultra (purple needle grass) may dominate and such sites are interpreted to be remnants of the pristine valley grassland. In northwestern California a floristically distinct formation of the Valley Grassland, known as Coast Prairie (Munz 1959) or Northern Coastal Grassland (Holland and Keil 1989) is recognized. The dominant grasses include many native perennial bunchgrasses in genera such as Agrostis, Calamagrostis, Danthonia, Deschampsia, Festuca, Koeleria and Poa (Heady et al. 1977). Non-native annuals do not dominate, but on some sites non-native perennials like Anthoxanthum odoratum may colonize the native grassland (Foin and Hektner 1986). Elevationally, California's grasslands extend from sea level to at leas 1500 m. The upper boundary is vague because montane grassland formations are commonly referred to as meadows; a community which Munz (1959) does not recognize. Holland and Keil (1989) describe the montane meadow as an azonal community; that is, a community restricted not so much to a particular climatic zone but rather controlled by substrate characteristics. They consider poor soil-drainage an over-riding factor in the development of montane meadows and, in contrast to grasslands, meadows often remain green through the summer drought. Floristically, meadows are composed of graminoids; Cyperaceae, Juncaceae, and rhizomatous grasses such as Agropyron (wheat grass). Some bunchgrasses, such as Muhlenbergia rigens, are
-
Inert carriers for column extraction chromatography
International Nuclear Information System (INIS)
Katykhin, G.S.
1978-01-01
Inert carriers used in column extraction chromatography are reviewed. Such carriers are devided into two large groups: hydrophilic carriers which possess high surface energy and are well wetted only with strongly polar liquids (kieselguhrs, silica gels, glasses, cellulose, Al 2 O 3 ) and water-repellent carriers which possess low surface energy and are well wetted with various organic solvents (polyethylene, polytetrafluorethylene polytrifluorochlorethylene). Properties of various carriers are presented: structure, chemical and radiation stability, adsorption properties, extracting agent capacity. The effect of structure and sizes of particles on the efficiency of chromatography columns is considered. Ways of immovable phase deposition on the carrier and the latter's regeneration. Peculiarities of column packing for preparative and continuous chromatography are discussed
-
Groundwater quality in the Antelope Valley, California
Dawson, Barbara J. Milby; Belitz, Kenneth
2012-01-01
Groundwater provides more than 40 percent of California’s drinking water. To protect this vital resource, the State of California created the Groundwater Ambient Monitoring and Assessment (GAMA) Program. The Priority Basin Project of the GAMA Program provides a comprehensive assessment of the State’s groundwater quality and increases public access to groundwater-quality information. Antelope Valley is one of the study areas being evaluated. The Antelope study area is approximately 1,600 square miles (4,144 square kilometers) and includes the Antelope Valley groundwater basin (California Department of Water Resources, 2003). Antelope Valley has an arid climate and is part of the Mojave Desert. Average annual rainfall is about 6 inches (15 centimeters). The study area has internal drainage, with runoff from the surrounding mountains draining towards dry lakebeds in the lower parts of the valley. Land use in the study area is approximately 68 percent (%) natural (mostly shrubland and grassland), 24% agricultural, and 8% urban. The primary crops are pasture and hay. The largest urban areas are the cities of Palmdale and Lancaster (2010 populations of 152,000 and 156,000, respectively). Groundwater in this basin is used for public and domestic water supply and for irrigation. The main water-bearing units are gravel, sand, silt, and clay derived from surrounding mountains. The primary aquifers in Antelope Valley are defined as those parts of the aquifers corresponding to the perforated intervals of wells listed in the California Department of Public Health database. Public-supply wells in Antelope Valley are completed to depths between 360 and 700 feet (110 to 213 meters), consist of solid casing from the land surface to a depth of 180 to 350 feet (55 to 107 meters), and are screened or perforated below the solid casing. Recharge to the groundwater system is primarily runoff from the surrounding mountains, and by direct infiltration of irrigation and sewer and septic
-
The effects of DACA in young migrant´s professional carriers and emotions
Directory of Open Access Journals (Sweden)
Magdalena Barros Nock
2017-09-01
Full Text Available Tuesday 5 of September of 2017 President Trump announced the end of Deferred Action for Childhood Arrivals (DACA and gave Congress six months to find a solution for the lives of these young people in the US. The present article has the objective to study the effects that DACA has had on the professional carriers of young migrants and their emotions through four field work stays between 2012 and 2016 in the agricultural valley of Santa Maria, California, open interviews were implemented to young women and men, following the transformations in their studies, work and emotions. The data obtained is qualitative. In the study, we can see how the young made an effort to continue their studies and search for employment outside the rural sector. Their emotions went from fear and lack of hope to feelings of hope. However, fear has come back again to their lives after Trump was elected.
-
The Health Valley: Global Entrepreneurial Dynamics.
Dubuis, Benoit
2014-12-01
In the space of a decade, the Lake Geneva region has become the Health Valley, a world-class laboratory for discovering and developing healthcare of the future. Through visionary individuals and thanks to exceptional infrastructure this region has become one of the most dynamic in the field of innovation, including leading scientific research and exceptional actors for the commercialization of academic innovation to industrial applications that will improve the lives of patients and their families. Here follows the chronicle of a spectacular expansion into the Health Valley.
-
Solar energy innovation and Silicon Valley
Kammen, Daniel M.
2015-03-01
The growth of the U. S. and global solar energy industry depends on a strong relationship between science and engineering innovation, manufacturing, and cycles of policy design and advancement. The mixture of the academic and industrial engine of innovation that is Silicon Valley, and the strong suite of environmental policies for which California is a leader work together to both drive the solar energy industry, and keep Silicon Valley competitive as China, Europe and other area of solar energy strength continue to build their clean energy sectors.
-
Control of charge carrier dynamics in disordered conjugated polymers
Energy Technology Data Exchange (ETDEWEB)
Hertel, Dirk [Physical Chemistry, University of Cologne, Luxemburgerstr. 116, 50939 Cologne, Germany, (Germany)
2011-07-01
We developed a new method to probe charge carrier mobility on ultrafast time scale. It is based on electric field induced second harmonic generation. The method is applied to prototypical amorphous conjugated polymers of the polyphenylene- and polyfluorene-type. Typically the carrier mobility in these organic polymers decreases with time in a power law fashion from about 1 cm{sup 2}Vs{sup -1} at 1 ps to its stationary value of about 10{sup -6} cm{sup 2}Vs{sup -1} in hundreds of ns. The dynamics of the mobility is discussed. It is shown, that in nanoscale devices the macroscopic mobility is not adequate to describe charge transport. We study the influence of disorder, morphology and temperature on ultrafast transport. At early times the transport is dominated by tunneling and disorder plays already an essential role. Comparison of transient photocurrents with Monte-Carlo simulation reveals that on-chain transport has to be invoked to rationalize our results. The hopping rates for intrachain transport are much larger compared with interchain transport. The results give access to essential transport properties for the development of advanced theoretical models and may help to design improved solar cells.
-
Joint Iterative Carrier Synchronization and Signal Detection for Dual Carrier 448 Gb/s PDM 16-QAM
DEFF Research Database (Denmark)
Zibar, Darko; Carvalho, Luis; Estaran Tolosa, Jose Manuel
2013-01-01
Soft decision driven joint carrier synchronization and signal detection, employing expectation maximization, is experimentally demonstrated. Employing soft decisions offers an improvement of 0.5 dB compared to hard decision digital PLL based carrier synchronization and demodulation.......Soft decision driven joint carrier synchronization and signal detection, employing expectation maximization, is experimentally demonstrated. Employing soft decisions offers an improvement of 0.5 dB compared to hard decision digital PLL based carrier synchronization and demodulation....
-
Study of electrical fatigue by defect engineering in organic light-emitting diodes
International Nuclear Information System (INIS)
Gassmann, Andrea; Yampolskii, Sergey V.; Klein, Andreas; Albe, Karsten; Vilbrandt, Nicole; Pekkola, Oili; Genenko, Yuri A.; Rehahn, Matthias; Seggern, Heinz von
2015-01-01
Graphical abstract: - Highlights: • Electrical fatigue is investigated in PPV-based polymer light-emitting diodes. • Bromide defects remaining from Gilch synthesis limit PLED lifetime. • Electrical stress yields lower hole mobility and transition to dispersive transport. • Triplet excitons reduce lifetime and EL-emission-induced degradation observed. • Self-consistent drift-diffusion model for charge carrier injection and transport. - Abstract: In this work the current knowledge on the electrical degradation of polymer-based light-emitting diodes is reviewed focusing especially on derivatives of poly(p-phenylene-vinylene) (PPV). The electrical degradation will be referred to as electrical fatigue and is understood as mechanisms, phenomena and material properties that change during continuous operation of the device at constant current. The focus of this review lies especially on the effect of chemical synthesis on the transport properties of the organic semiconductor and the device lifetimes. In addition, the prominent transparent conductive oxide indium tin oxide as well as In 2 O 3 will be reviewed and how their properties can be altered by the processing conditions. The experiments are accompanied by theoretical modeling shining light on how the change of injection barriers, charge carrier mobility or trap density influence the current–voltage characteristics of the diodes and on how and which defects form in transparent conductive oxides used as anode
-
LIQUIFIED NATURAL GAS (LNG CARRIERS
Directory of Open Access Journals (Sweden)
Daniel Posavec
2010-12-01
Full Text Available Modern liquefied natural gas carriers are double-bottom ships classified according to the type of LNG tank. The tanks are specially designed to store natural gas cooled to -161°C, the boiling point of methane. Since LNG is highly flammable, special care must be taken when designing and operating the ship. The development of LNG carriers has begun in the middle of the twentieth century. LNG carrier storage space has gradually grown to the current maximum of 260000 m3. There are more than 300 LNG carriers currently in operation (the paper is published in Croatian.
-
Biswas, Swarup; Dutta, Bula; Bhattacharya, Subhratanu
2013-10-01
The present article demonstrates an intensive study upon the temperature dependent current density (J)-voltage (V) characteristics of moderately doped polypyrrole nanostructure and its silver nanoparticles incorporated nanocomposites. Analysis of the measured J-V characteristics of different synthesized nano-structured samples within a wide temperature range revealed that the electrical conduction behavior followed a trapped charge-limited conduction and a transition of charge transport mechanism from deep exponential trap limited conduction to shallow traps limited conduction had been occurred due to the incorporation of silver nanoparticles within the polypyrrole matrix. A direct evaluation of carrier mobility as a function of electric field and temperature from the measured J-V characteristics illustrates that the incorporation of silver nanoparticles within the polypyrrole matrix enhances the carrier mobility at a large extent by reducing the concentration of traps within the polypyrrole matrix. The calculated mobility is consistent with the Poole-Frenkel form for the electrical field up to a certain temperature range. The nonlinear low temperature dependency of mobility of all the nanostructured samples was explained by Mott variable range hopping conduction mechanisms. Quantitative information regarding the charge transport parameters obtained from the above study would help to extend optimization strategies for the fabrication of new organic semiconducting nano-structured devices.
-
Biogeochemical studies of wintering waterfowl in the Imperial and Sacramento Valleys
Energy Technology Data Exchange (ETDEWEB)
Koranda, J.J.; Stuart, M.; Thompson, S.; Conrado, C.
1979-10-01
Trace and major elemental composition were determined in the organs of wintering waterfowl in the Imperial and Sacramento Valleys of California, and in soils, sediments, and agricultural fertilizer that constitute the various sources of elements in the waterfowl. These data provide a biogeochemical baseline for waterfowl populations wintering in an area being developed for geothermal power. This baseline in the Imperial Valley is affected by soil and sediment composition, agricultural effluents in irrigation and stream water, and spent shot deposited by hunters in waterfowl habitats. The waterfowl acquire a set of trace elements from these sources and concentrations increase in their organs over the wintering period. Nickel, arsenic, selenium, bromine, and lead are the primary elements acquired from soil sources, agricultural effluents, and spent shot in the Imperial Valley. The assessment of effects from geothermal effluents on waterfowl populations in complex because there are large influxes of materials into the Imperial Valley ecosystem that contain trace elements, i.e., irrigation water, phosphatic fertilizers, pesticides, and lead shot. Multiple sources exist for many elements prominent in the expected geothermal effluents. The relationships between the two California valleys, the Imperial and Sacramento, are apparent in the trace element concentrations in the organs of waterfowl obtained in those two valleys. Arsenic is absent in the waterfowl organs obtained in the Sacramento Valley and relatively common in the Imperial Valley waterfowl. The effect of any release of geothermal effluent in the Imperial Valley waterfowl habitats will be difficult to describe because of the complexity of the biogeochemical baseline and the multiple sources of trace and major elements in the ecosystem.
-
Goldstone-Apple Valley Radio Telescope System Theory of Operation
Stephan, George R.
1997-01-01
The purpose of this learning module is to enable learners to describe how the Goldstone-Apple Valley Radio Telescope (GAVRT) system functions in support of Apple Valley Science and Technology Center's (AVSTC) client schools' radio astronomy activities.
-
International Nuclear Information System (INIS)
1981-10-01
Ford, Bacon and Davis Utah Inc. has reevaluated the Monument Valley site in order to revise the March 1977 engineering assessment of the problems resulting from the existence of radioactive uranium mill tailings at Monument Valley, Arizona. This engineering assessment has included the preparation of topographic maps, the performance of core drillings and radiometric measurements sufficient to determine areas and volumes of tailings and radiation exposures of individuals and nearby populations, the investigations of site hydrology and meteorology, and the evaluation and costing of alternative corrective actions. Radon gas released from the 1.1 million tons of tailings at the Monument Valley site constitutes the most significant environmental impact, although windblown tailings and external gamma radiation also are factors. The four alternative actions presented in this engineering assessment range from millsite decontamination with the addition of 3 m of stabilization cover material to removal of the tailings to remote disposal sites and decontamination of the tailings site. Cost estimates for the four options range from about $6,600,000 for stabilization in-place, to about $15,900,000 for disposal at a distance of about 15 mi. Three principal alternatives for reprocessing the Monument Valley tailings were examined: heap leaching, treatment at an existing mill; and reprocessing at a new conventional mill constructed for tailings reprocessing. The cost of the uranium recovered would be more than $500/lb of U 3 O 8 by heap leach or conventional plant processes. The spot market price for uranium was $25/lb early in 1981. Therefore, reprocessing the tailings for uranium recovery is economically unattractive
-
Electrical properties of gallium arsenide irradiated with electrons and neutrons
International Nuclear Information System (INIS)
Kol'chenko, T.I.; Lomako, V.M.
1975-01-01
A study was made of changes in the electrical properties of GaAs doped with Te, S, Se, Si, Ge, Sn (n 0 approximately 10 16 -10 18 cm -3 ) and irradiated either with 2.5-28 MeV electrons or with fast reactor neutrons. An analysis of changes in the electron density indicated that the rate of carrier removal by electron bombardment was independent of the dopant but was governed by isolated radiation defects. The change in the mobility due to irradiation with 2.5-10 MeV electrons was also governed by isolated defects. When the electron energy was increased to 28 MeV the main contribution to the change in the mobility was made by defect clusters. In the neutron-irradiation case the changes in the carrier density and mobility were mainly due to defect clusters and the nature of changes in the electrical properties was again independent of the dopant
-
Energy Technology Data Exchange (ETDEWEB)
Biedermann, P.; Grube, T.; Hoehlein, B. (eds.)
2006-07-01
For the future, a strongly growing energy demand is expected in the transport sector worldwide. Economically efficient oil production will run through a maximum in the next decade. Higher fuel prices and an environmentally desirable reduction of emissions will increase the pressure for reducing fuel consumption and emissions in road traffic. These criteria show the urgent necessity of structural changes in the fuel market. Due to its advantages concerning industrial-scale production, storage and global availability, methanol has the short- to medium-term potential for gaining increased significance as a substitution product in the energy market. Methanol can be produced both from fossil energy sources and from biomass or waste materials through the process steps of synthesis gas generation with subsequent methanol synthesis. Methanol has the potential to be used in an environmentally friendly manner in gasoline/methanol mixtures for flexible fuel vehicles with internal combustion engines and in diesel engines with pure methanol. Furthermore, it can be used in fuel cell vehicles with on-board hydrogen production in direct methanol fuel cell drives, and in stationary systems for electricity and heat generation as well as for hydrogen production. Finally, in portable applications it serves as an energy carrier for electric power generation. In this book, the processes for the production and use of methanol are presented and evaluated, markets and future options are discussed and issues of safety and environmental impacts are addressed by a team of well-known authors. (orig.)
-
Air Carrier Traffic Statistics.
2013-11-01
This report contains airline operating statistics for large certificated air carriers based on data reported to U.S. Department of Transportation (DOT) by carriers that hold a certificate issued under Section 401 of the Federal Aviation Act of 1958 a...
-
Air Carrier Traffic Statistics.
2012-07-01
This report contains airline operating statistics for large certificated air carriers based on data reported to U.S. Department of Transportation (DOT) by carriers that hold a certificate issued under Section 401 of the Federal Aviation Act of 1958 a...
-
The effect of electric field maximum on the Rabi flopping and generated higher frequency spectra
International Nuclear Information System (INIS)
Niu Yueping; Cui Ni; Xiang Yang; Li Ruxin; Gong Shangqing; Xu Zhizhan
2008-01-01
We investigate the effect of the electric field maximum on the Rabi flopping and the generated higher frequency spectra properties by solving Maxwell-Bloch equations without invoking any standard approximations. It is found that the maximum of the electric field will lead to carrier-wave Rabi flopping (CWRF) through reversion dynamics which will be more evident when the applied field enters the sub-one-cycle regime. Therefore, under the interaction of sub-one-cycle pulses, the Rabi flopping follows the transient electric field tightly through the oscillation and reversion dynamics, which is in contrast to the conventional envelope Rabi flopping. Complete or incomplete population inversion can be realized through the control of the carrier-envelope phase (CEP). Furthermore, the generated higher frequency spectra will be changed from distinct to continuous or irregular with the variation of the CEP. Our results demonstrate that due to the evident maximum behavior of the electric field, pulses with different CEP give rise to different CWRFs, and then different degree of interferences lead to different higher frequency spectral features.
-
Natural gas and electricity generation in New South Wales
International Nuclear Information System (INIS)
Webb, G.
2001-01-01
In its Profile of the Australian Electricity Industry, ABARE noted that NSW was the first State in Australia to unbundle the operations of its State owned electricity industry. The process commenced in 1991, when the Electricity Commission of NSW was renamed Pacific Power and reorganised into six generation and transmission sectors. The power generation fuel mix for NSW in 1999-2000 was as follows: black coal, 97 percent and natural gas, 3 percent. NSW has also imported some brown coal generated electricity from Victoria in recent years. The import of cheap brown coal power from this State due to a marked increase in the availability of brown coal base-load generators in the Latrobe Valley forced some surplus black coal generating capacity in NSW to be withdrawn from the marketplace. Four generating units were closed down in 1998 two 500 MW units at Liddell and two 300 MW units at Munmorah. Further prospects for natural gas are reported to be good; its share in the thermal electricity generation market is forecasted to rise from 3 percent in 1999-2000 to 12 percent in 2014-1015
-
Assessing the Costs and Benefits of Resilience Investments: Tennessee Valley Authority Case Study
Energy Technology Data Exchange (ETDEWEB)
Allen, Melissa R. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Wilbanks, Thomas J. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Preston, Benjamin L. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Kao, Shih-Chieh [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Bradbury, James [U.S. Department of Energy (DOE), Office of Energy Policy and Systems Analysis (EPSA), Washington, DC (United States)
2017-01-01
This report describes a general approach for assessing climate change vulnerabilities of an electricity system and evaluating the costs and benefits of certain investments that would increase system resilience. It uses Tennessee Valley Authority (TVA) as a case study, concentrating on the Cumberland River basin area on the northern side of the TVA region. The study focuses in particular on evaluating risks associated with extreme heat wave and drought conditions that could be expected to affect the region by mid-century. Extreme climate event scenarios were developed using a combination of dynamically downscaled output from the Community Earth System Model and historical heat wave and drought conditions in 1993 and 2007, respectively.
-
Topographic evolution of Yosemite Valley from Low Temperature Thermochronology
Tripathy-Lang, A.; Shuster, D. L.; Cuffey, K. M.; Fox, M.
2014-12-01
In this contribution, we interrogate the timing of km-scale topography development in the region around Yosemite Valley, California. Our goal is to determine when this spectacular glacial valley was carved, and how this might help address controversy surrounding the topographic evolution of the Sierra Nevada. At the scale of the range, two rival hypotheses are each supported by different datasets. Low-temperature thermochronology supports the idea that the range has been high-standing since the Cretaceous, whereas geomorphic evidence suggests that much of the elevation of the Sierra Nevada was attained during the Pliocene. Recent work by McPhillips and Brandon (2012) suggests instead that both ideas are valid, with the range losing much elevation during the Cenozoic, but regaining it during Miocene surface uplift.At the local scale, the classic study of Matthes (1930) determined that most of Yosemite Valley was excavated by the Sherwin-age glaciation that ended ~1 Ma. The consensus view is in agreement, although some argue that nearby comparable valleys comparable were carved long ago (e.g., House et al., 1998). If the Quaternary and younger glaciations were responsible for the bulk of the valley's >1 km depth, we might expect apatite (U-Th)/He ages at the valley floor to be histories at these locations, these data constrain patterns of valley topography development through time. We also supplement these data with zircon 4He/3He thermochronometry, which is a newly developed method that provides information on continuous cooling paths through ~120-220 °C. We will present both the apatite and zircon 4He/3He data and, in conjunction with thermo-kinematic modeling, discuss the ability and limitations of these data to test models of Sierra Nevada topography development through time. Matthes (1930) USGS Professional Paper House et al. (1998) Nature McPhillips and Brandon (2012) American Journal of Science
-
Valley-controlled propagation of pseudospin states in bulk metacrystal waveguides
Chen, Xiao-Dong; Deng, Wei-Min; Lu, Jin-Cheng; Dong, Jian-Wen
2018-05-01
Light manipulations such as spin-direction locking propagation, robust transport, quantum teleportation, and reconfigurable electromagnetic pathways have been investigated at the boundaries of photonic systems. Recently by breaking Dirac cones in time-reversal-invariant photonic crystals, valley-pseudospin coupled edge states have been employed to realize selective propagation of light. Here, we realize the controllable propagation of pseudospin states in three-dimensional bulk metacrystal waveguides by valley degree of freedom. Reconfigurable photonic valley Hall effect is achieved for frequency-direction locking propagation in such a way that the propagation path can be tunable precisely by scanning the working frequency. A complete transition diagram is illustrated on the valley-dependent pseudospin states of Dirac-cone-absent photonic bands. A photonic blocker is proposed by cascading two inversion asymmetric metacrystal waveguides in which pseudospin-direction locking propagation exists. In addition, valley-dependent pseudospin bands are also discussed in a realistic metamaterials sample. These results show an alternative way toward molding the pseudospin flow in photonic systems.
-
Measuring the electric field of few-cycle laser pulses by attosecond cross correlation
International Nuclear Information System (INIS)
Bandrauk, Andre D.; Chelkowski, Szczepan; Shon, Nguyen Hong
2002-01-01
A new technique for directly measuring the electric field of linearly polarized few-cycle laser pulses is proposed. Based on the solution of the time-dependent Schroedinger equation (TDSE) for an H atom in the combined field of infrared (IR) femtosecond (fs) and ultraviolet (UV) attosecond (as) laser pulses we show that, as a function of the time delay between two pulses, the difference (or equivalently, asymmetry) of photoelectron signals in opposite directions (along the polarization vector of laser pulses) reproduces very well the profile of the electric field (or vector potential) in the IR pulse. Such ionization asymmetry can be used for directly measuring the carrier-envelope phase difference (i.e., the relative phase of the carrier frequency with respect to the pulse envelope) of the IR fs laser pulse
-
Thermoelectric band engineering: The role of carrier scattering
Witkoske, Evan; Wang, Xufeng; Lundstrom, Mark; Askarpour, Vahid; Maassen, Jesse
2017-11-01
Complex electronic band structures, with multiple valleys or bands at the same or similar energies, can be beneficial for thermoelectric performance, but the advantages can be offset by inter-valley and inter-band scattering. In this paper, we demonstrate how first-principles band structures coupled with recently developed techniques for rigorous simulation of electron-phonon scattering provide the capabilities to realistically assess the benefits and trade-offs associated with these materials. We illustrate the approach using n-type silicon as a model material and show that intervalley scattering is strong. This example shows that the convergence of valleys and bands can improve thermoelectric performance, but the magnitude of the improvement depends sensitively on the relative strengths of intra- and inter-valley electron scattering. Because anisotropy of the band structure also plays an important role, a measure of the benefit of band anisotropy in the presence of strong intervalley scattering is presented.
-
Miller, Todd S.
2009-01-01
In 2002, the U.S. Geological Survey, in cooperation with the Town of Caroline and Tompkins County Planning Department, began a study of the valley-fill aquifer system in upper Sixmile Creek and headwaters of West Branch Owego Creek valleys in the Town of Caroline, NY. The purpose of the study is to provide geohydrologic data to county and town planners as they develop a strategy to manage and protect their water resources. The first aquifer reach investigated in this series is in the Town of Caroline and includes the upper Sixmile Creek valley and part of West Branch Owego Creek valley. The portions of the valley-fill aquifer system that are comprised of saturated coarse-grained sediments including medium to coarse sand and sandy gravel form the major aquifers. Confined sand and gravel units form the major aquifers in the western and central portions of the upper Sixmile Creek valley, and an unconfined sand and gravel unit forms the major aquifer in the eastern portion of the upper Sixmile Creek valley and in the headwaters of the West Branch Owego Creek valley. The valley-fill deposits are thinnest near the edges of the valley where they pinch out along the till-mantled bedrock valley walls. The thickness of the valley fill in the deepest part of the valley, at the western end of the study area, is about 100 feet (ft); the thickness is greater than 165 ft on top of the Valley Heads Moraine in the central part of the valley. An estimated 750 people live over and rely on groundwater from the valley-fill aquifers in upper Sixmile Creek and West Branch Owego Creek valleys. Most groundwater withdrawn from the valley-fill aquifers is pumped from wells with open-ended 6-inch diameter casings; the remaining withdrawals are from shallow dug wells or cisterns that collect groundwater that discharges to springs (especially in the Brooktondale area). The valley-fill aquifers are the sources of water for about 200 households, several apartment complexes, two mobile home parks
-
Energy Technology Data Exchange (ETDEWEB)
Chen, Xiangyu; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa, E-mail: iwamoto@pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, S3-33 O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)
2014-01-06
By using electric-field-induced optical second-harmonic generation (EFISHG) measurement at two laser wavelengths of 1000 nm and 860 nm, we investigated carrier behavior inside the pentacene and C{sub 60} component of co-deposited pentacene:C{sub 60} bulk-heterojunctions (BHJs) organic solar cells (OSCs). The EFISHG experiments verified the presence of two carrier paths for electrons and holes in BHJs OSCs. That is, two kinds of electric fields pointing in opposite directions are identified as a result of the selectively probing of SHG activation from C{sub 60} and pentacene. Also, under open-circuit conditions, the transient process of the establishment of open-circuit voltage inside the co-deposited layer has been directly probed, in terms of photovoltaic effect. The EFISHG provides an additional promising method to study carrier path of electrons and holes as well as dissociation of excitons in BHJ OSCs.
-
The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers.
Keizer, Joris G; McKibbin, Sarah R; Simmons, Michelle Y
2015-07-28
Abrupt dopant profiles and low resistivity are highly sought after qualities in the silicon microelectronics industry and, more recently, in the development of an all epitaxial Si:P based quantum computer. If we increase the active carrier density in silicon to the point where the material becomes superconducting, while maintaining a low thermal budget, it will be possible to fabricate nanoscale superconducting devices using the highly successful technique of depassivation lithography. In this work, we investigate the dopant profile and activation in multiple high density Si:P δ-layers fabricated by stacking individual layers with intervening silicon growth. We determine that dopant activation is ultimately limited by the formation of P-P dimers due to the segregation of dopants between multilayers. By increasing the encapsulation thickness between subsequent layers, thereby minimizing the formation of these deactivating defects, we are able to achieve an active carrier density of ns = 4.5 ×10(14) cm(-2) for a triple layer. The results of electrical characterization are combined with those of secondary ion mass spectroscopy to construct a model that accurately describes the impact of P segregation on the final active carrier density in Si:P multilayers. Our model predicts that a 3D active carrier density of 8.5 × 10(20) cm(-3) (1.7 atom %) can be achieved.
-
Valley-dependent spin-orbit torques in two-dimensional hexagonal crystals
Li, Hang; Wang, Xuhui; Manchon, Aurelien
2016-01-01
We study spin-orbit torques in two-dimensional hexagonal crystals such as graphene, silicene, germanene, and stanene. The torque possesses two components, a fieldlike term due to inverse spin galvanic effect and an antidamping torque originating from Berry curvature in mixed spin-k space. In the presence of staggered potential and exchange field, the valley degeneracy can be lifted and we obtain a valley-dependent Berry curvature, leading to a tunable antidamping torque by controlling the valley degree of freedom. The valley imbalance can be as high as 100% by tuning the bias voltage or magnetization angle. These findings open new venues for the development of current-driven spin-orbit torques by structural design.
-
Valley-dependent spin-orbit torques in two-dimensional hexagonal crystals
Li, Hang
2016-01-11
We study spin-orbit torques in two-dimensional hexagonal crystals such as graphene, silicene, germanene, and stanene. The torque possesses two components, a fieldlike term due to inverse spin galvanic effect and an antidamping torque originating from Berry curvature in mixed spin-k space. In the presence of staggered potential and exchange field, the valley degeneracy can be lifted and we obtain a valley-dependent Berry curvature, leading to a tunable antidamping torque by controlling the valley degree of freedom. The valley imbalance can be as high as 100% by tuning the bias voltage or magnetization angle. These findings open new venues for the development of current-driven spin-orbit torques by structural design.
-
Bhusal, U. C.; Dwivedi, S.; Ghimire, H.; Ulak, P. D.; Khatiwada, B.; Rijal, M. L.; Neupane, Y.; Aryal, S.; Pandey, D.; Gautam, A.; Mishra, S.
2017-12-01
Sudden release of turbid groundwater through piping in the Kali Khola and subsequent formation of over one hundred twenty sinkholes since 18 November, 2013 to May, 2014 in Armala Valley in northern part of Pokhara created havoc to the local residents. The main objective of the work is to investigate subsurface anomalies so as to locate the subsurface cavities, groundwater movement and areas prone to sinkholes formation in the area. Findings of the several studies and observations carried out in area by the authors and preventive measures carried out by Department of Water Induced Disaster Management are presented in the paper. To fulfill the objective 2D-Electrical Resistivity Tomography Survey was carried out at sixty five profiles with minimum electrode spacing from 1 m to 5 m on different profiles using WDJD-4 Resistivity meter. Res2Dinv Software was used for processing and interpretation of the acquired data. Geological mapping, preparation of columnar section of the sinkholes and river bank were conducted. Hand auguring, tracer test and topography survey were also carried out in the area. Different geophysical anomalies were identified in 2D-ERT survey which indicates the presence of compositional difference in layered sediments, undulations in depositional pattern with top humus layer of thickness 0.5 m, loose unconsolidated gravel layer 0.5 m - 4 m and clayey silt/silty clay layer upto 75 m depth. The cavities were found both in clayey silt layer and gravel layer with size ranging from 1-2 m to 10-12 m in depth and 2 m-10 m in diameter either empty or water filled depending on locations. Fifteen cavities that were detected during survey were excavated and immediately filled up. Three major and four minor groundwater flow paths were detected which has been later confirmed by tracer test, formation of new sinkholes along the path and during excavation for construction of underground structures for blocking the underground flow. Major flow path was detected at
-
Triphenylene columnar liquid crystals: spectroscopic study of triplets states and charge carriers
International Nuclear Information System (INIS)
Bondkowski, Jens
2000-01-01
This research thesis reports the study of three oxygenated derivatives of triphenylene (two monomers, a symmetric one and an asymmetric one, and a tetramer) by using different experimental techniques: absorption spectroscopy and fluorescence spectroscopy in stationary regime, and time-resolved fluorescence spectroscopy (also said single photon counting). Moreover, the author adapted an existing experiment of transient absorption spectroscopy time-resolved at the microsecond level to obtain spectra of thin layers under electric field. A cyclic voltammetry experiment and a spectro-electrochemistry experiment have also been performed. The report first presents the studied materials, the characterisation of singlet states, and the study of the effect molecular symmetry decreasing have on molecular transitions. Then, the author reports the study of cationic species of the triphenylene derivatives. The next chapters address the characterisation of derivative triplet states, and the study of energy transfer within the meso phase of one of these derivatives. The last chapters address charge carriers of columnar liquid crystals, and the molecular nature of these charge carriers
-
Electrical and optical characterizations of InAs/GaAs quantum dot solar cells
Han, Im Sik; Kim, Seung Hyun; Kim, Jong Su; Noh, Sam Kyu; Lee, Sang Jun; Kim, Honggyun; Kim, Deok-Kee; Leem, Jae-Young
2018-03-01
The electrical and optical characterizations of InAs/GaAs quantum dot solar cells (QDSCs) were investigated by frequency dependent capacitance-voltage ( C- V) measurements and photoreflectance (PR) spectroscopy. The C- V results confirmed that the frequency dependent junction capacitance ( C j) of QDSC is sensitive to the carrier exhaustion process through trapping and recapturing in the strain-induced defects and QD states caused by the interface strain between InAs and GaAs materials. As a result, at a low frequency (≤ 200 kHz), the C j of the QDSCs decreased with increasing InAs deposition thickness ( θ), leading to the decrease in carrier concentration ( N d) of the n-GaAs absorber layer due to the carrier losses processes caused by the trapping and re-capturing in the defects and the relatively large QDs. At θ ≤ 2.0 ML, the p-n junction electric field strength ( F pn) of the QDSCs which was evaluated by PR spectra decreased with increasing excitation photon intensity ( I ex) due to the typical field screening effect in the SC structure. On the other hand, the F pn of QDSCs with θ ≥ 2.5 ML approached a constant value with a relatively high I ex, which suggests that the decrease in photo-generated carriers in the QDSC was caused by the re-capturing and trapping process.
-
Fan, Ching-Lin; Lin, Wei-Chun; Chen, Hao-Wei
2018-06-01
This work demonstrates pentacene-based organic thin-film transistors (OTFTs) fabricated by inserting a 6,13-pentacenequinone (PQ) carrier injection layer between the source/drain (S/D) metal Au electrodes and pentacene channel layer. Compared to devices without a PQ layer, the performance characteristics including field-effect mobility, threshold voltage, and On/Off current ratio were significantly improved for the device with a 5-nm-thick PQ interlayer. These improvements are attributed to significant reduction of hole barrier height at the Au/pentacene channel interfaces. Therefore, it is believed that using PQ as the carrier injection layer is a good candidate to improve the pentacene-based OTFTs electrical performance.
-
Energy Technology Data Exchange (ETDEWEB)
Moorhead, G.F.; Opat, G.I.
1996-06-06
The acceleration of an electric conductor is predicted to produce an electric filed proportional to m/q where `m`is the free mass and `q` the charge of the carriers of the electric current. In certain configurations this leads to a measurable electromagnetic field (EMF). In this paper is reported a measurement of the EMF induced by rotationally accelerating coils of aluminium and copper wire. The measured EMFs are found to agree with the theoretical predictions to within the error estimates. 23 refs., 1 tab., 4 figs.
-
International Nuclear Information System (INIS)
Moorhead, G.F.; Opat, G.I.
1996-01-01
The acceleration of an electric conductor is predicted to produce an electric filed proportional to m/q where 'm'is the free mass and 'q' the charge of the carriers of the electric current. In certain configurations this leads to a measurable electromagnetic field (EMF). In this paper is reported a measurement of the EMF induced by rotationally accelerating coils of aluminium and copper wire. The measured EMFs are found to agree with the theoretical predictions to within the error estimates. 23 refs., 1 tab., 4 figs
-
West Valley Demonstration Project, West Valley, New York: Annual report
International Nuclear Information System (INIS)
1989-01-01
Under the West Valley Demonstration Project Act, Public Law 96-368, liquid high-level radioactive waste stored at the Western New York Nuclear Services Center, West Valley, New York, that resulted from spent nuclear fuel reprocessing operations conducted between 1966 and 1972, is to be solidified in borosilicate glass and transported to a federal repository for geologic disposal. A major milestone was reached in May 1988 when the Project began reducing the volume of the liquid high-level waste. By the end of 1988, approximately 15 percent of the initial inventory had been processed into two waste streams. The decontaminated low-level liquid waste is being solidified in cement. The high-level waste stream is being stored in an underground tank pending its incorporation into borosilicate glass. Four tests of the waste glass melter system were completed. These tests confirmed equipment operability, control system reliability, and provided samples of waste glass for durability testing. In mid-1988, the Department validated an integrated cost and schedule plan for activities required to complete the production of the waste borosilicate glass. Design of the radioactive Vitrification Facility continued
-
Medicinal plants of Usherai valley, Dir, NWFP, Pakistan
International Nuclear Information System (INIS)
Hazarat, A.; Shah, J.; Ahmad, S.; Nasir, M.; Jan, A.K.; Skindar
2010-01-01
This research is based on the results of an ethno-botanical research conducted in Usherai Valley. The main objective was to enlist the wealth of medicinal plants. In total 50 species, belonging to 32 families of wild herbs, shrubs and trees were found to be used as medicinal plants by the inhabitants in the valley. (author)
-
Electricity versus hydrogen for passenger cars under stringent climate change control
Rösler, H.; van der Zwaan, B.; Keppo, I.; Bruggink, J.
2014-01-01
In this article we analyze how passenger car transportation in Europe may change this century under permanent high oil prices and stringent climate control policy. We focus on electricity and hydrogen as principal candidate energy carriers, because these two options are increasingly believed to
-
AIR POLLUTION FEATURES OF THE VALLEY-BASED TOWNS IN HUNGARY
Directory of Open Access Journals (Sweden)
Z. UTASI
2016-03-01
Full Text Available There are 30 valley-based towns with >10,000 inhabitants in Hungary, filled by 1.023 million people i.e. 10 % of the population. Two criteria are used to define the valley-based town. They are: (i Vertical difference between the lowest point in the town and the highest one around it should be >100 m. At the same time, (ii the same difference on the opposite side should be >50 m. Air pollution data by the National Air Pollution Observation Network are used. Five contaminants were selected and analysed for 2007, 2010 and 2013. Due to a sharp reduction in the network, we could find data for a small part of the valley-based towns. Control towns with equal air-quality observations and similar cumulative number of inhabitants were also selected. The contaminants and the number of the settlements are: NO2 manual (14 valley-based vs. 2x14 control, NO2 automatic (8 vs. 8, SO2 automatic (7 vs. 2x6, PM10 automatic (8 vs. 2x7 and PM10 deposition manual (6 vs. 8. Average values, as well as high concentration episodes (>98%thresholds are equally analysed and evaluated. The main conclusion is that there are so big differences between the years both in absolute values and relative sequence of valley-based and control groups that the analysed there years is not enough to make any final conclusion. For step-over frequencies, however valley-based towns have some advantage, possibly due to the valley-hill wind system.
-
Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces
Gorai, Prashun; Seebauer, Edmund G.
2014-07-01
The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO2 (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.
-
Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces
International Nuclear Information System (INIS)
Gorai, Prashun; Seebauer, Edmund G.
2014-01-01
The spatial distribution of point defects near semiconductor surfaces affects the efficiency of devices. Near-surface band bending generates electric fields that influence the spatial redistribution of charged mobile defects that exchange infrequently with the lattice, as recently demonstrated for pile-up of isotopic oxygen near rutile TiO 2 (110). The present work derives a mathematical model to describe such redistribution and establishes its temporal dependence on defect injection rate and band bending. The model shows that band bending of only a few meV induces significant redistribution, and that the direction of the electric field governs formation of either a valley or a pile-up.
-
The Ohio River Valley CO2 Storage Project AEP Mountaineer Plan, West Virginia
Energy Technology Data Exchange (ETDEWEB)
Neeraj Gupta
2009-01-07
This report includes an evaluation of deep rock formations with the objective of providing practical maps, data, and some of the issues considered for carbon dioxide (CO{sub 2}) storage projects in the Ohio River Valley. Injection and storage of CO{sub 2} into deep rock formations represents a feasible option for reducing greenhouse gas emissions from coal-burning power plants concentrated along the Ohio River Valley area. This study is sponsored by the U.S. Department of Energy (DOE) National Energy Technology Laboratory (NETL), American Electric Power (AEP), BP, Ohio Coal Development Office, Schlumberger, and Battelle along with its Pacific Northwest Division. An extensive program of drilling, sampling, and testing of a deep well combined with a seismic survey was used to characterize the local and regional geologic features at AEP's 1300-megawatt (MW) Mountaineer Power Plant. Site characterization information has been used as part of a systematic design feasibility assessment for a first-of-a-kind integrated capture and storage facility at an existing coal-fired power plant in the Ohio River Valley region--an area with a large concentration of power plants and other emission sources. Subsurface characterization data have been used for reservoir simulations and to support the review of the issues relating to injection, monitoring, strategy, risk assessment, and regulatory permitting. The high-sulfur coal samples from the region have been tested in a capture test facility to evaluate and optimize basic design for a small-scale capture system and eventually to prepare a detailed design for a capture, local transport, and injection facility. The Ohio River Valley CO{sub 2} Storage Project was conducted in phases with the ultimate objectives of demonstrating both the technical aspects of CO{sub 2} storage and the testing, logistical, regulatory, and outreach issues related to conducting such a project at a large point source under realistic constraints. The site
-
International Nuclear Information System (INIS)
Yu, L.; Li, Y.P.; Huang, G.H.; An, C.J.
2017-01-01
Highlights: • A robust flexible probabilistic programming method is developed for planning MES. • Multiple uncertainties with various violations and satisfaction levels are examined. • Solutions of considering peak electricity prices and electric vehicles are analyzed. • RFPP-MES can better improve energy system reliability and abate pollutant emission. - Abstract: Effective electric power systems (EPS) planning with considering electricity price of 24-h time is indispensable in terms of load shifting, pollutant mitigation and energy demand-supply reliability as well as reducing electricity expense of end-users. In this study, a robust flexible probabilistic programming (RFPP) method is developed for planning municipal energy system (MES) with considering peak electricity prices (PEPs) and electric vehicles (EVs), where multiple uncertainties regarded as intervals, probability distributions and flexibilities as well as their combinations can be effectively reflected. The RFPP-MES model is then applied to planning Qingdao’s MES, where electrical load of 24-h time is simulated based on Monte Carlo. Results reveal that: (a) different time intervals lead to changes of energy supply patterns, the energy supply patterns would tend to the transition from self-supporting dominated (i.e. in valley hours) to outsourcing-dominated (i.e. in peak hours); (b) 15.9% of total imported electricity expense would be reduced compared to that without considering PEPs; (c) with considering EVs, the CO_2 emissions of Qingdao’s transportation could be reduced directly and the reduction rate would be 2.5%. Results can help decision makers improve energy supply patterns, reduce energy system costs and abate pollutant emissions as well as adjust end-users’ consumptions.
-
Debris Flow Occurrence and Sediment Persistence, Upper Colorado River Valley, CO.
Grimsley, K J; Rathburn, S L; Friedman, J M; Mangano, J F
2016-07-01
Debris flow magnitudes and frequencies are compared across the Upper Colorado River valley to assess influences on debris flow occurrence and to evaluate valley geometry effects on sediment persistence. Dendrochronology, field mapping, and aerial photographic analysis are used to evaluate whether a 19th century earthen, water-conveyance ditch has altered the regime of debris flow occurrence in the Colorado River headwaters. Identifying any shifts in disturbance processes or changes in magnitudes and frequencies of occurrence is fundamental to establishing the historical range of variability (HRV) at the site. We found no substantial difference in frequency of debris flows cataloged at eleven sites of deposition between the east (8) and west (11) sides of the Colorado River valley over the last century, but four of the five largest debris flows originated on the west side of the valley in association with the earthen ditch, while the fifth is on a steep hillslope of hydrothermally altered rock on the east side. These results suggest that the ditch has altered the regime of debris flow activity in the Colorado River headwaters as compared to HRV by increasing the frequency of debris flows large enough to reach the Colorado River valley. Valley confinement is a dominant control on response to debris flows, influencing volumes of aggradation and persistence of debris flow deposits. Large, frequent debris flows, exceeding HRV, create persistent effects due to valley geometry and geomorphic setting conducive to sediment storage that are easily delineated by valley confinement ratios which are useful to land managers.
-
Impact of carriers in oral absorption
DEFF Research Database (Denmark)
Gram, Luise Kvisgaard; Rist, Gerda Marie; Lennernäs, Hans
2009-01-01
Carriers may mediate the permeation across enterocytes for drug substances being organic anions. Carrier mediated permeation for the organic anions estrone-3-sulfate (ES) and glipizide across Caco-2 cells were investigated kinetically, and interactions on involved carriers evaluated. Initial...
-
Liu, Zhaolang; Yang, Zhenhai; Wu, Sudong; Zhu, Juye; Guo, Wei; Sheng, Jiang; Ye, Jichun; Cui, Yi
2017-12-26
Carrier recombination and light management of the dopant-free silicon/organic heterojunction solar cells (HSCs) based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) are the critical factors in developing high-efficiency photovoltaic devices. However, the traditional passivation technologies can hardly provide efficient surface passivation on the front surface of Si. In this study, a photoinduced electric field was induced in a bilayer antireflective coating (ARC) of polydimethylsiloxane (PDMS) and titanium oxide (TiO 2 ) films, due to formation of an accumulation layer of negative carriers (O 2 - species) under UV (sunlight) illumination. This photoinduced field not only suppressed the silicon surface recombination but also enhanced the built-in potential of HSCs with 84 mV increment. In addition, this photoactive ARC also displayed the outstanding light-trapping capability. The front PEDOT:PSS/Si HSC with the saturated O 2 - received a champion PCE of 15.51% under AM 1.5 simulated sunlight illumination. It was clearly demonstrated that the photoinduced electric field was a simple, efficient, and low-cost method for the surface passivation and contributed to achieve a high efficiency when applied in the Si/PEDOT:PSS HSCs.
-
Carrier-added and no-carrier-added syntheses of [18F]spiroperidol and [18F]haloperidol
International Nuclear Information System (INIS)
Kilbourn, M.R.; Welch, M.J.; Dence, C.S.; Tewson, T.J.; Saji, H.; Maeda, M.
1984-01-01
Syntheses of [ 18 F]haloperidol and [ 18 F]spiroperidol in both no-carrier-added and carrier-added forms have been accomplished. The no-carrier-added [ 18 F]butyrophenone neuroleptics were prepared in low ( 18 F-neuroleptics were prepared in better (5-17%) yields by 18 F-for- 19 F nucleophilic aromatic substitution. The preparation of all synthetic precursors, and procedures for radiolabeling are fully described. (author)
-
AC electric field assisted orientational photorefractive effect in C60-doped nematic liquid crystal
International Nuclear Information System (INIS)
Sun Xiudong; Pei Yanbo; Yao Fengfeng; Zhang Jianlong; Hou Chunfeng
2007-01-01
Photorefractive gratings were produced in a C 60 -doped nematic liquid crystal cell under the application of two coherent beams and a nonbiased sinusoidal ac electric field. The beam coupling and diffraction of the ac electric field assisted gratings were studied systematically. A stable asymmetric energy transference was obtained. Diffraction was observed when the angle (between the normal of the cell and the bisector of the writing beams) was 0 0 , and the dependence of diffraction efficiency on the peak-to-peak value of the ac voltage was similar to that at an incidence angle of 45 0 , suggesting that the role of the ac field was to facilitate the charge separation, and the space-charge field (SCF) originated predominantly from the diffusion of the ac electric field assisted photo-induced carriers under the application of nonuniform illumination and an applied ac field. The grating was produced by director reorientation induced by the cooperation of the SCF and the applied ac electric field. A self-erasing phenomenon was observed in this cell. An explanation in terms of the movement of two kinds of carriers with opposite signs was proposed
-
Electrical current at micro-/macro-scale of undoped and nitrogen-doped MWPECVD diamond films
Cicala, G.; Velardi, L.; Senesi, G. S.; Picca, R. A.; Cioffi, N.
2017-12-01
Chemical, structural, morphological and micro-/macro-electrical properties of undoped and nitrogen-(N-)doped diamond films are determined by X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies, field emission scanning electron microscopy, atomic force microscopy, scanning capacitance microscopy (SCM) and two points technique for I-V characteristics, respectively. The characterization results are very useful to examine and understand the relationship among these properties. The effect of the nitrogen incorporation in diamond films is investigated through the evolution of the chemical, structural, morphological and topographical features and of the electrical behavior. The distribution of the electrical current is first assessed at millimeter scale on the surface of diamond films and then at micrometer scale on small regions in order to establish the sites where the carriers preferentially move. Specifically, the SCM images indicate a non-uniform distribution of carriers on the morphological structures mainly located along the grain boundaries. A good agreement is found by comparing the electrical currents at the micro- and macro-scale. This work aims to highlight phenomena such as photo- and thermionic emission from N-doped diamond useful for microelectronic engineering.
-
Groundwater quality in the Owens Valley, California
Dawson, Barbara J. Milby; Belitz, Kenneth
2012-01-01
Groundwater provides more than 40 percent of California’s drinking water. To protect this vital resource, the State of California created the Groundwater Ambient Monitoring and Assessment (GAMA) Program. The Priority Basin Project of the GAMA Program provides a comprehensive assessment of the State’s groundwater quality and increases public access to groundwater-quality information. Owens Valley is one of the study areas being evaluated. The Owens study area is approximately 1,030 square miles (2,668 square kilometers) and includes the Owens Valley groundwater basin (California Department of Water Resources, 2003). Owens Valley has a semiarid to arid climate, with average annual rainfall of about 6 inches (15 centimeters). The study area has internal drainage, with runoff primarily from the Sierra Nevada draining east to the Owens River, which flows south to Owens Lake dry lakebed at the southern end of the valley. Beginning in the early 1900s, the City of Los Angeles began diverting the flow of the Owens River to the Los Angeles Aqueduct, resulting in the evaporation of Owens Lake and the formation of the current Owens Lake dry lakebed. Land use in the study area is approximately 94 percent (%) natural, 5% agricultural, and 1% urban. The primary natural land cover is shrubland. The largest urban area is the city of Bishop (2010 population of 4,000). Groundwater in this basin is used for public and domestic water supply and for irrigation. The main water-bearing units are gravel, sand, silt, and clay derived from surrounding mountains. Recharge to the groundwater system is primarily runoff from the Sierra Nevada, and by direct infiltration of irrigation. The primary sources of discharge are pumping wells, evapotranspiration, and underflow to the Owens Lake dry lakebed. The primary aquifers in Owens Valley are defined as those parts of the aquifers corresponding to the perforated intervals of wells listed in the California Department of Public Health database
-
2010-01-01
... Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION (AVIATION PROCEEDINGS) ECONOMIC REGULATIONS GUIDELINES FOR SUBSIDIZING AIR CARRIERS PROVIDING ESSENTIAL AIR TRANSPORTATION § 271.4 Carrier costs. (a) The reasonable costs projected for a carrier providing essential air service at an eligible...
-
14 CFR 271.5 - Carrier revenues.
2010-01-01
... Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION (AVIATION PROCEEDINGS) ECONOMIC REGULATIONS GUIDELINES FOR SUBSIDIZING AIR CARRIERS PROVIDING ESSENTIAL AIR TRANSPORTATION § 271.5 Carrier revenues. (a) The projected passenger revenue for a carrier providing essential air service at an eligible...
-
Chrisstoffels, L.A.J.; de Jong, Feike; Reinhoudt, David; Sivelli, Stefano; Gazzola, Licia; Casnati, Alessandro; Ungaro, Rocco
1999-01-01
Anion transfer to the membrane phase affects the extraction efficiency of salt transport by cation carriers 1 and 3. Addition of anion receptors 5 or 6 to cation carriers 1, 3, or 4 in the membrane phase enhances the transport of salts under conditions in which the cation carriers alone do not
-
Jenkins, Edward D.; Glover, Robert E.
1964-01-01
The part of Fountain Valley considered in this report extends from Colorado Springs to the Pueblo County line. It is 23 miles long and has an area of 26 square miles. The part of Jimmy Camp Valley discussed is 11 miles long and has an area of 9 square miles. The topography is characterized by level flood plains and alluvial terraces that parallel the valley and by rather steep hills along the valley sides. The climate is semiarid, average annual precipitation being about 13 inches. Farming and stock raising are the principal occupations in the valleys; however, some of the agricultural land near Colorado Springs is being used for housing developments. The Pierre Shale and alluvium underlie most of the area, and mesa gravel caps the shale hills adjacent to Fountain Valley. The alluvium yields water to domestic, stock, irrigation, and public-supply wells and is capable of yielding large quantities of water for intermittent periods. Several springs issue along the sides of the valley at the contact of the mesa gravel and the underlying Pierre Shale. The water table ranges in depth from less than 10 feet along the bottom lands to about 80 feet along the sides of the valleys; the saturated thickness ranges from less than a foot to about 50 feet. The ground-water reservoir in Fountain Valley is recharged by precipitation that falls within the area, by percolation from Fountain Creek, which originates in the Pikes Peak, Monument Valley, and Rampart Range areas, and by seepage from irrigation water. This reservoir contains about 70,000 acre-feet of ground water in storage. The ground-water reservoir in Jimmy Camp Valley is recharged from precipitation that falls within the area, by percolation from Jimmy Camp Creek during periods of streamflow, and by seepage from irrigation water. The Jimmy Camp ground-water reservoir contains about 25,000 acre-feet of water in storage. Ground water is discharged from the area by movement to the south, by evaporation and transpiration in
-
Guo, Zhen; Zhou, Lianqun; Tang, Yuguo; Li, Lin; Zhang, Zhiqi; Yang, Hongbo; Ma, Hanbin; Nathan, Arokia; Zhao, Dongxu
2017-09-13
Surface/interface charge-carrier generation, diffusion, and recombination/transport modulation are especially important in the construction of photodetectors with high efficiency in the field of nanoscience. In the paper, a kind of ultraviolet (UV) detector is designed based on ZnO nanostructures considering photon-trapping, surface plasmonic resonance (SPR), piezophototronic effects, interface carrier-trapping/transport control, and collection. Through carefully optimized surface/interface carrier-transport modulation, a designed device with detectivity as high as 1.69 × 10 16 /1.71 × 10 16 cm·Hz 1/2 /W irradiating with 380 nm photons under ultralow bias of 0.2 V is realized by alternating nanoparticle/nanowire active layers, respectively, and the designed UV photodetectors show fast and slow recovery processes of 0.27 and 4.52 ms, respectively, which well-satisfy practical needs. Further, it is observed that UV photodetection could be performed within an alternative response by varying correlated key parameters, through efficient surface/interface carrier-transport modulation, spectrally resolved photoresponse of the detector revealing controlled detection in the UV region based on the ZnO nanomaterial, photodetection allowed or limited by varying the active layers, irradiation distance from one of the electrodes, standing states, or electric field. The detailed carrier generation, diffusion, and recombination/transport processes are well illustrated to explain charge-carrier dynamics contributing to the photoresponse behavior.
-
Valley-chiral quantum Hall state in graphene superlattice structure
Tian, H. Y.; Tao, W. W.; Wang, J.; Cui, Y. H.; Xu, N.; Huang, B. B.; Luo, G. X.; Hao, Y. H.
2016-05-01
We theoretically investigate the quantum Hall effect in a graphene superlattice (GS) system, in which the two valleys of graphene are coupled together. In the presence of a perpendicular magnetic field, an ordinary quantum Hall effect is found with the sequence σxy=ν e^2/h(ν=0,+/-1,+/-2,\\cdots) . At the zeroth Hall platform, a valley-chiral Hall state stemming from the single K or K' valley is found and it is localized only on one sample boundary contributing to the longitudinal conductance but not to the Hall conductivity. Our findings may shed light on the graphene-based valleytronics applications.
-
Yang, Xiao-Le; Ye, Xiao-Juan; Liu, Chun-Sheng; Yan, Xiao-Hong
2018-02-01
Producing hydrogen fuel using suitable photocatalysts from water splitting is a feasible method to harvest solar energy. A desired photocatalyst is expected to have suitable band gap, moderate band edge position, and high carrier mobility. By employing first-principles calculations, we explore a α-CS monolayer as a metal-free efficient photocatalyst. The α-CS monolayer shows good energetic, dynamic, and thermal stabilities and is insoluble in water, suggesting its experimental practicability. Monolayer and bilayer α-CS present not only appropriate band gaps for visible and ultraviolet light absorption but also moderate band alignments with water redox potentials in pH neutral water. Remarkably, the α-CS monolayer exhibits high (up to 8453.19 cm2 V-1s-1 for hole) and anisotropic carrier mobility, which is favorable to the migration and separation of photogenerated carriers. In addition, monolayer α-CS experiences an interesting semiconductor-metal transition by applying uniaxial strain and external electric field. Moreover, α-CS under certain strain and electric field is still dynamically stable with the absence of imaginary frequencies. Furthermore, we demonstrate that the graphite (0 0 1) surface is a potential substrate for the α-CS growth with the intrinsic properties of α-CS maintaining. Therefore, our results could pave the way for the application of α-CS as a promising photocatalyst.
-
Commercial production of ethanol in the San Luis Valley, Colorado. Final report
Energy Technology Data Exchange (ETDEWEB)
Hewlett, E.M.; Erickson, M.V.; Ferguson, C.D.; Boswell, B.S.; Walter, K.M.; Hart, M.L.; Sherwood, P.B.
1983-07-01
The commercial feasibility of producing between 76 and 189 million liters (20 to 50 million gallons) of ethanol annually in the San Luis Valley, Colorado using geothermal energy as the primary heat source was assessed. The San Luis Valley is located in south-central Colorado. The valley is a high basin situated approximately 2316 meters (7600 feet) above sea level which contains numerous warm water wells and springs. A known geothermal resource area (IGRA) is located in the east-central area of the valley. The main industry in the valley is agriculture, while the main industry in the surrounding mountains is lumber. Both of these industries can provide feedstocks for the production of ethanol.
-
Directory of Open Access Journals (Sweden)
Laxman K.C.
2014-12-01
Full Text Available Electrification in Kathmandu valley had started in 1911 and the use of polychlorinated biphenyls (PCBs probably started since 1940s (Devkota, 2005. This research work was undertaken to find out the degree and extent of PCBs contamination in transformer oil and to explore its impacts on occupational health and safety issues of the workers and on the environment. The research was focused on Distributions Centers of the Nepal Electricity Authority (NEA in the Kathmandu valley, NEA Lainchaur workshop and welding workshops of the Kathmandu valley. The samples of transformer oil were collected, safely stored and analyzed using L2000DX Chloride Analyzer, PCBs contamination at >50 ppm level was found in 184 distribution transformers with total volume of PCBs contaminated transformer oil to be 67566.3 Kg. The knowledge on impacts of PCBs contaminated transformer oil on human health and environment was better among NEA employees than among employees of welding workshops, though not satisfactory. Due to very low awareness, the workers come in contact with the transformer oil regularly and many health impacts such as eye problems, skin related complication, weakness and respiratory problems might be due to this exposure; however, exact impacts could not be verified scientifically.DOI: http://dx.doi.org/10.3126/ije.v3i4.11727 International Journal of EnvironmentVolume-3, Issue-4, Sep-Nov 2014Page : 12-23
-
Cryostratigraphy and sedimentology of high-Arctic fjord-valleys
Gilbert, Graham Lewis
2018-01-01
Fjord-valleys, as sediment-filled palaeofjords, are characteristic of formerly glaciated mountainous coastal areas. High-Arctic fjord-valleys commonly host permafrost, but are poorly accessible and hence have drawn relatively little research. The research presented in this thesis combines the methods of cryostratigraphy, clastic sedimentology, sequence stratigraphy, geomorphology and geochronology to investigate the sedimentary infilling, permafrost formation and late Quaternary landscape dev...
-
International Nuclear Information System (INIS)
Anon.
1992-01-01
The potential of hydrogen to be used as a clean fuel for the production of heat and power, as well as for the propulsion of aeroplanes and vehicles, is described, in particular for Germany. First, attention is paid to the application of hydrogen as a basic material for the (petro)chemical industry, as an indirect energy source for (petro)chemical processes, and as a direct energy source for several purposes. Than the importance of hydrogen as an energy carrier in a large-scale application of renewable energy sources is discussed. Next an overview is given of new and old hydrogen production techniques from fossil fuels, biomass, or the electrolysis of water. Energetic applications of hydrogen in the transportation sector and the production of electric power and heat are mentioned. Brief descriptions are given of techniques to store hydrogen safely. Finally attention is paid to hydrogen research in Germany. Two hydrogen projects, in which Germany participates, are briefly dealt with: the Euro-Quebec project (production of hydrogen by means of hydropower), and the HYSOLAR project (hydrogen production by means of solar energy). 18 figs., 1 tab., 7 refs
-
Carrier-added and no-carrier-added syntheses of (/sup 18/F)spiroperidol and (/sub 18/F)haloperidol
Energy Technology Data Exchange (ETDEWEB)
Kilbourn, M R; Welch, M J; Dence, C S; Tewson, T J; Saji, H; Maeda, M
1984-07-01
Syntheses of (18F)haloperidol and (18F)spiroperidol in both no-carrier-added and carrier-added forms have been accomplished. The no-carrier-added (18F)butyrophenone neuroleptics were prepared in low (less than 2%) yield by acid decomposition of aryl piperidine triazenes. Carrier-added 18F-neuroleptics were prepared in better (5-17%) yields by 18F-for-19F nucleophilic aromatic substitution. The preparation of all synthetic precursors, and procedures for radiolabeling are fully described.
-
Large tunable valley splitting in edge-free graphene quantum dots on boron nitride
Freitag, Nils M.; Reisch, Tobias; Chizhova, Larisa A.; Nemes-Incze, Péter; Holl, Christian; Woods, Colin R.; Gorbachev, Roman V.; Cao, Yang; Geim, Andre K.; Novoselov, Kostya S.; Burgdörfer, Joachim; Libisch, Florian; Morgenstern, Markus
2018-05-01
Coherent manipulation of the binary degrees of freedom is at the heart of modern quantum technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient spin control has been demonstrated in many solid-state systems, whereas exploitation of the valley has only recently been started, albeit without control at the single-electron level. Here, we show that van der Waals stacking of graphene onto hexagonal boron nitride offers a natural platform for valley control. We use a graphene quantum dot induced by the tip of a scanning tunnelling microscope and demonstrate valley splitting that is tunable from -5 to +10 meV (including valley inversion) by sub-10-nm displacements of the quantum dot position. This boosts the range of controlled valley splitting by about one order of magnitude. The tunable inversion of spin and valley states should enable coherent superposition of these degrees of freedom as a first step towards graphene-based qubits.
-
Intrinsic and extrinsic electrical and thermal transport of bulk black phosphorus
Hu, Sile; Xiang, Junsen; Lv, Meng; Zhang, Jiahao; Zhao, Hengcan; Li, Chunhong; Chen, Genfu; Wang, Wenhong; Sun, Peijie
2018-01-01
We report a comprehensive investigation of the electrical, thermal, and thermoelectric transport properties of bulk single-crystalline black phosphorus in wide temperature (2-300 K) and field (0-9 T) ranges. Electrical transport below T ≈ 250 K is found to be dominated by extrinsic hole-type charge carriers with large mobility exceeding 104 cm2/V s at low temperatures. While thermal transport measurements reveal an enhanced in-plane thermal conductivity maximum κ = 180 W/m K at T ≈ 25 K, it appears still to be largely constrained by extrinsic phonon scattering processes, e.g., the electron-phonon process, in addition to intrinsic umklapp scattering. The thermoelectric power and Nernst effect seem to be strongly influenced by ambipolar transport of charge carriers with opposite signs in at least the high-temperature region above 200 K, which diminishes the thermoelectric power factor of this material. Our results provide a timely update to the transport properties of bulk black phosphorus for future fundamental and applied research.
-
Local electric field screening in bi-layer graphene devices
Directory of Open Access Journals (Sweden)
Vishal ePanchal
2014-02-01
Full Text Available We present experimental studies of both local and macroscopic electrical effects in uniform single- (1LG and bi-layer graphene (2LG devices as well as in devices with non-uniform graphene coverage, under ambient conditions. DC transport measurements on sub-micron scale Hall bar devices were used to show a linear rise in carrier density with increasing amounts of 2LG coverage. Electrical scanning gate microscopy was used to locally top gate uniform and non-uniform devices in order to observe the effect of local electrical gating. We experimentally show a significant level of electric field screening by 2LG. We demonstrate that SGM technique is an extremely useful research tool for studies of local screening effects, which provides a complementary view on phenomena that are usually considered only within a macroscopic experimental scheme.
-
Huang, Wenchao; Xia, Hui; Wang, Shaowei; Deng, Honghai; Wei, Peng; Li, Lu; Liu, Fengqi; Li, Zhifeng; Li, Tianxin
2011-12-01
Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) both are capable of mapping the 2-demensional carrier distribution in semiconductor device structures, which is essential in determining their electrical and optoelectronic performances. In this work, cross-sectional SCM1,2 is used to study the InGaAs/InP P-i-N junctions prepared by area-selective p-type diffusion. The diffusion lengths in the depth as well as the lateral directions are obtained for junctions under different window sizes in mask, which imply that narrow windows may result in shallow p-n junctions. The analysis is beneficial to design and fabricate focal plane array of near infrared photodetectors with high duty-cycle and quantum efficiency. On the other hand, SSRM provides unparalleled spatial resolution (demanded for studying low-dimensional structures. However, to derive the carrier density from the measured local conductance in individual quantum structures, reliable model for SSRM is necessary but still not well established. Based on the carrier concentration related transport mechanisms, i.e. thermionic emission and thermionic field emission4,5, we developed a numerical model for the tip-sample Schottky contact4. The calculation is confronted with SSRM study on the dose-calibrated quantum wells (QWs).
-
Mapping the electrical properties of large-area graphene
Bøggild, Peter; Mackenzie, David M. A.; Whelan, Patrick R.; Petersen, Dirch H.; Due Buron, Jonas; Zurutuza, Amaia; Gallop, John; Hao, Ling; Jepsen, Peter U.
2017-12-01
The significant progress in terms of fabricating large-area graphene films for transparent electrodes, barriers, electronics, telecommunication and other applications has not yet been accompanied by efficient methods for characterizing the electrical properties of large-area graphene. While in the early prototyping as well as research and development phases, electrical test devices created by conventional lithography have provided adequate insights, this approach is becoming increasingly problematic due to complications such as irreversible damage to the original graphene film, contamination, and a high measurement effort per device. In this topical review, we provide a comprehensive overview of the issues that need to be addressed by any large-area characterisation method for electrical key performance indicators, with emphasis on electrical uniformity and on how this can be used to provide a more accurate analysis of the graphene film. We review and compare three different, but complementary approaches that rely either on fixed contacts (dry laser lithography), movable contacts (micro four point probes) and non-contact (terahertz time-domain spectroscopy) between the probe and the graphene film, all of which have been optimized for maximal throughput and accuracy, and minimal damage to the graphene film. Of these three, the main emphasis is on THz time-domain spectroscopy, which is non-destructive, highly accurate and allows both conductivity, carrier density and carrier mobility to be mapped across arbitrarily large areas at rates that by far exceed any other known method. We also detail how the THz conductivity spectra give insights on the scattering mechanisms, and through that, the microstructure of graphene films subject to different growth and transfer processes. The perspectives for upscaling to realistic production environments are discussed.
-
Origin and Evolution of Li-rich Brines at Clayton Valley, Nevada, USA
Munk, L. A.; Bradley, D. C.; Hynek, S. A.; Chamberlain, C. P.
2011-12-01
Lithium is the key component in Li-ion batteries which are the primary energy storage for electric/hybrid cars and most electronics. Lithium is also an element of major importance on a global scale because of interest in increasing reliance on alternative energy sources. Lithium brines and pegmatites are the primary and secondary sources, respectively of all produced Li. The only Li-brine in the USA that is currently in production exists in Clayton Valley, NV. The groundwater brines at Clayton Valley are located in a closed basin with an average evaporation rate of 142 cm/yr. The brines are pumped from six aquifer units that are composed of varying amounts of volcanic ash, gravel, salt, tufa, and fine-grained sediments. Samples collected include spring water, fresh groundwater, groundwater brine, and meteoric water (snow). The brines are classified as Na-Cl waters and the springs and fresh groundwater have a mixed composition and are more dilute than the brines. The Li content of the waters in Clayton Valley ranges from less than 1 μg/L (snow) up to 406.9 mg/L in the lower ash aquifer system (one of six aquifers in the basin). The cold springs surrounding Clayton Valley have Li concentrations of about 1 mg/L. A hot spring located just east of Clayton Valley contains 1.6 mg/L Li. The Li concentration of the fresh groundwater is less than 1 mg/L. Hot groundwater collected in the basin contain 30-40 mg/L Li. Water collected from a geothermal drilling north of Silver Peak, NV, had water with 4.9 mg/L Li at a depth of >1000m. The δD and δ18O isotopic signatures of fresh groundwater and brine form an evaporation path that extends from the global meteoric water line toward the brine from the salt aquifer system (the most isotopically enriched brine with ave. δD = -3.5, ave. δ18O = -67.0). This suggests that mixing of inflow water with the salt aquifer brine could have played an important role in the evolution of the brines. Along with mixing, evaporation appears to
-
Carrier-added and no-carrier-added syntheses of (/sup 18/F)spiroperidol and (/sup 18/F)haloperidol
Energy Technology Data Exchange (ETDEWEB)
Kilbourn, M R; Welch, M J; Dence, C S; Tewson, T J; Saji, H; Maeda, M [Washington Univ., St. Louis, MO (USA). Edward Mallinckrodt Inst. of Radiology
1984-07-01
Syntheses of (/sup 18/F)haloperidol and (/sup 18/F)spiroperidol in both no-carrier-added and carrier-added forms have been accomplished. The no-carrier-added (/sup 18/F)butyrophenone neuroleptics were prepared in low (<2%) yield by acid decomposition of aryl piperidine triazenes. Carrier-added /sup 18/F-neuroleptics were prepared in better (5-17%) yields by /sup 18/F-for-/sup 19/F nucleophilic aromatic substitution. The preparation of all synthetic precursors, and procedures for radiolabeling are fully described.
-
Commercial production of ethanol in the San Luis Valley, Colorado. Final Report
Energy Technology Data Exchange (ETDEWEB)
Hewlett, E.M.; Erickson, M.V.; Ferguson, C.D.; Sherwood, P.B.; Boswell, B.S.; Walter, K.M.; Hart, M.L.
1983-07-01
The purpose of this study is to assess the commercial feasibility of producing between 76 and 189 million liters (20 and 50 million gallons) of ethanol annually in the San Luis Valley, Colorado using geothermal energy as the primary heat source. The San Luis Valley is located in south-central Colorado. The valley is a high basin situated approximately 2316 meters (7600 feet) above sea level which contains numerous warm water wells and springs. A known geothermal resource area (KGRA) is located in the east-central area of the valley. The main industry in the valley is agriculture, while the main industry in the surrounding mountains is lumber. Both of these industries can provide feedstock for the production of ethanol.
-
Ultrafast generation of pseudo-magnetic field for valley excitons in WSe2 monolayers
Kim, J.
2014-12-04
The valley pseudospin is a degree of freedom that emerges in atomically thin two-dimensional transition metal dichalcogenides (MX2). The capability to manipulate it, in analogy to the control of spin in spintronics, can open up exciting opportunities. Here, we demonstrate that an ultrafast and ultrahigh valley pseudo-magnetic field can be generated by using circularly polarized femtosecond pulses to selectively control the valley degree of freedom in monolayer MX2. Using ultrafast pump-probe spectroscopy, we observed a pure and valley-selective optical Stark effect in WSe2 monolayers from the nonresonant pump, resulting in an energy splitting of more than 10 milli-electron volts between the K and K′ valley exciton transitions. Our study opens up the possibility to coherently manipulate the valley polarization for quantum information applications.
-
Ultrafast generation of pseudo-magnetic field for valley excitons in WSe2 monolayers
Kim, J.; Hong, X.; Jin, C.; Shi, S.-F.; Chang, C.-Y. S.; Chiu, Ming-Hui; Li, Lain-Jong; Wang, F.
2014-01-01
The valley pseudospin is a degree of freedom that emerges in atomically thin two-dimensional transition metal dichalcogenides (MX2). The capability to manipulate it, in analogy to the control of spin in spintronics, can open up exciting opportunities. Here, we demonstrate that an ultrafast and ultrahigh valley pseudo-magnetic field can be generated by using circularly polarized femtosecond pulses to selectively control the valley degree of freedom in monolayer MX2. Using ultrafast pump-probe spectroscopy, we observed a pure and valley-selective optical Stark effect in WSe2 monolayers from the nonresonant pump, resulting in an energy splitting of more than 10 milli-electron volts between the K and K′ valley exciton transitions. Our study opens up the possibility to coherently manipulate the valley polarization for quantum information applications.
-
Electric dipole moment of magnetoexciton in concentric quantum rings
García, L. F.; Mikhailov, I. D.; Revinova, S. Yu
2017-12-01
We study properties of exciton in a weakly coupled concentric quantum rings, penetrated by an axially directed magnetic flux and subjected to an electric field in the ring’s plane. To this end, we adopt a simple model of quasi-one-dimensional rotator, for which the wave functions and the corresponding energies we found by using the double Fourier series expansion method. Revealed multiple intersections of the energy levels provide conditions for abrupt changes of the radial and the angular quantum numbers, making possible the tunnelling of carriers between rings and allowing the formation of a permanent large dipole moment. We show that the electric and magnetic polarizability of concentric quantum rings with a trapped exciton are very sensible to external electric and magnetic fields.
-
8 CFR 217.6 - Carrier agreements.
2010-01-01
... 8 Aliens and Nationality 1 2010-01-01 2010-01-01 false Carrier agreements. 217.6 Section 217.6 Aliens and Nationality DEPARTMENT OF HOMELAND SECURITY IMMIGRATION REGULATIONS VISA WAIVER PROGRAM § 217... may notify a carrier of the existence of a basis for termination of a carrier agreement under this...
-
Doping dependence of electrical and thermal conductivity of nanoscale polyaniline thin films
Energy Technology Data Exchange (ETDEWEB)
Jin Jiezhu; Wang Qing [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Haque, M A [Department of Mechanical and Nuclear Engineering, Pennsylvania State University, University Park, PA 16802 (United States)
2010-05-26
We performed simultaneous characterization of electrical and thermal conductivity of 55 nm thick polyaniline (PANI) thin films doped with different levels of camphor sulfonic acids (CSAs). The effect of the doping level is more pronounced on electrical conductivity than on thermal conductivity of PANIs, thereby greatly affecting their ratio that determines the thermoelectric efficiency. At the 60% (the molar ratio of CSA to phenyl-N repeat unit of PANI) doping level, PANI exhibited the maximum electrical and thermal conductivity due to the formation of mostly delocalized structures. Whereas polarons are the charge carriers responsible for the electrical conduction, phonons are believed to play a dominant role in the heat conduction in nanoscale doped PANI thin films.
-
Room-temperature coupling between electrical current and nuclear spins in OLEDs
Malissa, H.; Kavand, M.; Waters, D. P.; van Schooten, K. J.; Burn, P. L.; Vardeny, Z. V.; Saam, B.; Lupton, J. M.; Boehme, C.
2014-09-01
The effects of external magnetic fields on the electrical conductivity of organic semiconductors have been attributed to hyperfine coupling of the spins of the charge carriers and hydrogen nuclei. We studied this coupling directly by implementation of pulsed electrically detected nuclear magnetic resonance spectroscopy in organic light-emitting diodes (OLEDs). The data revealed a fingerprint of the isotope (protium or deuterium) involved in the coherent spin precession observed in spin-echo envelope modulation. Furthermore, resonant control of the electric current by nuclear spin orientation was achieved with radiofrequency pulses in a double-resonance scheme, implying current control on energy scales one-millionth the magnitude of the thermal energy.
-
The lakes of the Jordan Rift Valley
International Nuclear Information System (INIS)
Gat, J.R.
2001-01-01
This paper presents a summary of the proceedings of a workshop on the Lakes of the Jordan Rift Valley that was held in conjunction with the CRP on The Use of Isotope Techniques in Lake Dynamics Investigations. The paper presents a review of the geological, hydrogeological and physical limnological setting of the lakes in the Jordan Rift Valley, Lake Hula, Lake Kinneret and the Dead Sea. This is complemented by a description of the isotope hydrology of the system that includes the use of a wide range of isotopes: oxygen-18, deuterium, tritium, carbon-14, carbon-13, chlorine isotopes, boron-11 and helium-3/4. Environmental isotope aspects of the salt balances of the lakes, their palaeolimnology and biogeochemical tracers are also presented. The scope of application of isotopic tracers is very broad and provides a clear insight into many aspects of the physical, chemical and biological limnology of the Rift Valley Lakes. (author)
-
Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties
International Nuclear Information System (INIS)
Park, Helen Hejin; Jayaraman, Ashwin; Heasley, Rachel; Yang, Chuanxi; Hartle, Lauren; Gordon, Roy G.; Mankad, Ravin; Haight, Richard; Gunawan, Oki; Mitzi, David B.
2014-01-01
Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were incorporated with aluminum to adjust the carrier concentration. The electron carrier concentration increased up to one order of magnitude from 10 19 to 10 20 cm −3 with aluminum incorporation and sulfur content in the range of 0 ≤ S/(Zn+Al) ≤ 0.16. However, the carrier concentration decreased by five orders of magnitude from 10 19 to 10 14 cm −3 for S/(Zn+Al) = 0.34 and decreased even further when S/(Zn+Al) > 0.34. Such tunable electrical properties are potentially useful for graded buffer layers in thin-film photovoltaic applications
-
West Valley Reprocessing Plant. Safety analysis plant, supplement 18
International Nuclear Information System (INIS)
1975-01-01
Supplement 18 contains the following additions to Appendix II--5.0 Geology and Seismology: Section 12 ''Seismic Investigations for Spent Fuel Reprocessing Facility at West Valley, New York,'' October 20, 1975, and Section 13 ''Earthquake Return Period Analysis at West Valley, New York, for Nuclear Fuel Services, Inc.'' November 5, 1975
-
Wind Regimes in Complex Terrain of the Great Valley of Eastern Tennessee
Energy Technology Data Exchange (ETDEWEB)
Birdwell, Kevin R. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
2011-05-01
This research was designed to provide an understanding of physical wind mechanisms within the complex terrain of the Great Valley of Eastern Tennessee to assess the impacts of regional air flow with regard to synoptic and mesoscale weather changes, wind direction shifts, and air quality. Meteorological data from 2008 2009 were analyzed from 13 meteorological sites along with associated upper level data. Up to 15 ancillary sites were used for reference. Two-step complete linkage and K-means cluster analyses, synoptic weather studies, and ambient meteorological comparisons were performed to generate hourly wind classifications. These wind regimes revealed seasonal variations of underlying physical wind mechanisms (forced channeled, vertically coupled, pressure-driven, and thermally-driven winds). Synoptic and ambient meteorological analysis (mixing depth, pressure gradient, pressure gradient ratio, atmospheric and surface stability) suggested up to 93% accuracy for the clustered results. Probabilistic prediction schemes of wind flow and wind class change were developed through characterization of flow change data and wind class succession. Data analysis revealed that wind flow in the Great Valley was dominated by forced channeled winds (45 67%) and vertically coupled flow (22 38%). Down-valley pressure-driven and thermally-driven winds also played significant roles (0 17% and 2 20%, respectively), usually accompanied by convergent wind patterns (15 20%) and large wind direction shifts, especially in the Central/Upper Great Valley. The behavior of most wind regimes was associated with detectable pressure differences between the Lower and Upper Great Valley. Mixing depth and synoptic pressure gradients were significant contributors to wind pattern behavior. Up to 15 wind classes and 10 sub-classes were identified in the Central Great Valley with 67 joined classes for the Great Valley at-large. Two-thirds of Great Valley at-large flow was defined by 12 classes. Winds
-
Dependent of electrical resistivity of thin wire on magnetic field and temperature
International Nuclear Information System (INIS)
Sadeghi, E.; Zare, M.
2006-01-01
Variation of electrical resistivity of Bismuth nano wire versus magnetic field the and temperature are considered. We study the size effect and surface scattering of the carrier in thin wire for systems with ellipsoidal Fermi surfaces. Results are in good agreement with experimental points
-
Electric field confinement effect on charge transport in organic field-effect transistors
Li, X.; Kadashchuk, A.; Fishchuk, I.I.; Smaal, W.T.T.; Gelinck, G.H.; Broer, D.J.; Genoe, J.; Heremans, P.; Bässler, H.
2012-01-01
While it is known that the charge-carrier mobility in organic semiconductors is only weakly dependent on the electric field at low fields, the experimental mobility in organic field-effect transistors using silylethynyl-substituted pentacene is found to be surprisingly field dependent at low
-
Electrical and optical deep level spectroscopy on Os doped p-InP
International Nuclear Information System (INIS)
Parveen, S.; Zafar, N.; Khan, A.; Qureshi, U.S.; Iqbal, M.Z.
1997-01-01
Transition metal (TM) impurities are introduced for obtaining semi insulating (III-V) compound semiconductors used as base material for electronic and optoelectronic devices. TM doping introduces near mid gap levels which are used to compensate shallow level donors and acceptors in (III-V) compound semiconductors. The study of electrical properties of heavier transition metals in InP has been turned to an active field of research owing to their potential to produce thermally stable semi insulating substrate materials. Osmium has been tried for this purpose in our work. InP: Os samples have been grown by low pressure metalorganic chemical vapour deposition (LP-MOCVD). Optical and electrical Deep Level Transient Spectroscopy Techniques have been used to characterise osmium related deep level defects in the p-type samples. Three majority carrier (Hole) emitting levels OsA, OsB, OsC and one minority carrier (electron) emitting level Osl are observed in the DLTS and ODLTS measurements on p-type InP:Os. ON optical injection, only Osl appears and all other majority carrier emitting levels disappear dramatically. Special emphasis is given to the detailed comparison by ODLTS and EDLTS, which yields important information on the relative capture cross-sections of Osmium induced levels in p-InP. (author)
-
Low intrinsic carrier density LSMO/Alq3/AlOx/Co organic spintronic devices
Riminucci, Alberto; Graziosi, Patrizio; Calbucci, Marco; Cecchini, Raimondo; Prezioso, Mirko; Borgatti, Francesco; Bergenti, Ilaria; Dediu, Valentin Alek
2018-04-01
The understanding of spin injection and transport in organic spintronic devices is still incomplete, with some experiments showing magnetoresistance and others not detecting it. We have investigated the transport properties of a large number of tris-(8-hydroxyquinoline)aluminum-based organic spintronic devices with an electrical resistance greater than 5 MΩ that did not show magnetoresistance. Their transport properties could be described satisfactorily by known models for organic semiconductors. At high voltages (>2 V), the results followed the model of space charge limited current with a Poole-Frenkel mobility. At low voltages (˜0.1 V), that are those at which the spin valve behavior is usually observed, the charge transport was modelled by nearest neighbor hopping in intra-gap impurity levels, with a charge carrier density of n0 = (1.44 ± 0.21) × 1015 cm-3 at room temperature. Such a low carrier density can explain why no magnetoresistance was observed.
-
Asymmetric valley-resolved beam splitting and incident modes in slanted graphene junctions
International Nuclear Information System (INIS)
Hsieh, S. H.; Chu, C. S.
2016-01-01
Electron injection into a graphene sheet through a slanted armchair graphene nanoribbon (AGNR) is investigated. An incident mode, or subband, in the AGNR is valley-unpolarized. Our attention is on the valley-resolved nature of the injected electron beams and its connection to the incident mode. It is known for a normal injection that an incident mode will split symmetrically into two valley-resolved beams of equal intensity. We show, in contrast, that slanted injections result in asymmetric valley-resolved beam splitting. The most asymmetric beam splitting cases, when one of the valley-resolved beams has basically disappeared, are found and the condition derived. This is shown not due to trigonal warping because it holds even in the low incident energy regime, as long as collimation allows. These most asymmetric beam splitting cases occur at energies within an energy interval near and include the subband edge of an incident mode. The physical picture is best illustrated by a projection of the slanted AGNR subband states onto that of the 2D graphene sheet. It follows that the disappearing of a valley-resolved beam coincides with the situation that the group velocities of the projected states in the corresponding valley are in backward directions
-
2017-08-01
This study estimated a significant amount of underreporting to the MCMIS crash file by the States, for the carriers who cooperated in the study. For the study carriers, it appears that the MCMIS file contained about 66 percent of their reportable cra...
-
The Drentsche Aa valley system
International Nuclear Information System (INIS)
Gans, W. de.
1981-01-01
This thesis is composed of five papers concerned with Late Quaternary geology and geomorphology of the Aa valley system. The correlation and chronostratigraphic position of the layers have been established by radiocarbon dating. (Auth.)
-
Land Subsidence Caused by Groundwater Exploitation in Quetta Valley, Pakistan
Directory of Open Access Journals (Sweden)
Najeebullah Kakar
2016-12-01
Full Text Available Land subsidence is affecting several metropolitan cities in developing as well as developed countries around the world such as Nagoya (Japan, Shanghai (China, Venice (Italy and San Joaquin valley (United States. This phenomenon is attributed to natural as well as anthropogenic activities that include extensive groundwater withdrawals. Quetta is the largest city of Balochistan province in Pakistan. This valley is mostly dry and ground water is the major source for domestic and agricultural consumption. The unplanned use of ground water resources has led to the deterioration of water quality and quantity in the Quetta valley. Water shortage in the region was further aggravated by the drought during (1998-2004 that hit the area forcing people to migrate from rural to urban areas. Refugees from the war torn neighboring Afghanistan also contributed to rapid increase in population of Quetta valley that has increased from 0.26 million in 1975 to 3.0 million in 2016. The objective of this study was to measure the land subsidence in Quetta valley and identify the effects of groundwater withdrawals on land subsidence. To achieve this goal, data from five Global Positioning System (GPS stations were acquired and processed. Furthermore the groundwater decline data from 41 observation wells during 2010 to 2015 were calculated and compared with the land deformation. The results of this study revealed that the land of Quetta valley is subsiding from 30mm/y on the flanks to 120 mm/y in the central part. 1.5-5.0 m/y of groundwater level drop was recorded in the area where the rate of subsidence is highest. So the extensive groundwater withdrawals in Quetta valley is considered to be the driving force behind land subsidence.
-
First in situ measurement of electric field fluctuations during strong spread F in the Indian zone
Directory of Open Access Journals (Sweden)
H. S. S. Sinha
Full Text Available An RH-560 rocket flight was conducted from Sriharikota rocket range (SHAR (14°N, 80°E, dip 14°N along with other experiments, as a part of equatorial spread F (ESF campaign, to study the nature of irregularities in electric field and electron density. The rocket was launched at 2130 local time (LT and it attained an apogee of 348 km. Results of vertical and horizontal electric field fluctuations are presented here. Scale sizes of electric field fluctuations were measured in the vertical direction only. Strong ESF irregularities were observed in three regions, viz., 160-190 km, 210-257 km and 290-330 km. Some of the valley region vertical electric field irregularities (at 165 km and 168 km, in the intermediate-scale size range, observed during this flight, show spectral peak at kilometer scales and can be interpreted in terms of the image striation theory suggested by Vickrey et al. The irregularities at 176 km do not exhibit any peak at kilometer scales and appear to be of a new type. Scale sizes of vertical electric field fluctuations showed a decrease with increasing altitude. The most prominent scales were of the order of a few kilometers around 170 km and a few hundred meters around 310 km. Spectra of intermediate-scale vertical electric field fluctuations below the base of the F region (210-257 km showed a tendency to become slightly flatter (spectral index n = -2.1 ± 0.7 as compared to the valley region (n = -3.6 ± 0.8 and the region below the F peak (n = -2.8 ± 0.5. Correlation analysis of the electron density and vertical electric field fluctuations suggests the presence of a sheared flow of current in 160-330 km region.
Keywords: Ionosphere (Electric fields and currents; ionospheric irregularities; Radio science (ionospheric physics -
Tachibana, Tomihisa; Tanahashi, Katsuto; Mochizuki, Toshimitsu; Shirasawa, Katsuhiko; Takato, Hidetaka
2018-04-01
Bifacial interdigitated-back-contact (IBC) silicon solar cells with a high bifaciality of 0.91 were fabricated. Screen printing and firing technology were used to reduce the production cost. For the first time, the relationship between the rear side structure and carrier collection probability was evaluated using internal quantum efficiency (IQE) mapping. The measurement results showed that the screen-printed electrode and back surface field (BSF) area led to low IQE. The low carrier collection probability by BSF area can be explained by electrical shading effects. Thus, it is clear that the IQE mapping system is useful to evaluate the IBC cell.
-
The Kinetics of Carrier Transport Inhibition
DEFF Research Database (Denmark)
Rosenberg, T.; Wilbrandt, Robert Walter
1962-01-01
The kinetical treatment of enzymatic carrier transports as given in previous communications has been extended to conditions of inhibition. Various possible types of inhibitors have been considered differing in the site of attack (enzyme or carrier), in the mode of action (competing with the subst......The kinetical treatment of enzymatic carrier transports as given in previous communications has been extended to conditions of inhibition. Various possible types of inhibitors have been considered differing in the site of attack (enzyme or carrier), in the mode of action (competing...... with the substrate for the enzyme or the carrier or for both, competing with the carrier for the enzyme, or non-competitive) and in the ability of penetrating the membrane. Experiments are reported on the inhibition of glucose and fructose transport across the human red cell membrane by phlorizine, phloretine...... and polyphloretinephosphate. The results of the analysis for these inhibitors indicate a substrate competitive mode of action. The effect of reversing the transport direction by interchanging the substrate concentration has been treated for the case of a non-penetrating substrate competitive inhibitor in the external medium...
-
Simulation of electrical characteristics of GaN vertical Schottky diodes
Łukasiak, Lidia; Jasiński, Jakub; Jakubowski, Andrzej
2016-12-01
Reverse current of GaN vertical Schottky diodes is simulated using Silvaco ATLAS to optimize the geometry for the best performance. Several physical quantities and phenomena, such as carrier mobility and tunneling mechanism are studied to select the most realistic models. Breakdown voltage is qualitatively estimated based on the maximum electric field in the structure.
-
Valley polarization in magnetically doped single-layer transition-metal dichalcogenides
Cheng, Yingchun
2014-04-28
We demonstrate that valley polarization can be induced and controlled in semiconducting single-layer transition-metal dichalcogenides by magnetic doping, which is important for spintronics, valleytronics, and photonics devices. As an example, we investigate Mn-doped MoS2 by first-principles calculations. We study how the valley polarization depends on the strength of the spin orbit coupling and the exchange interaction and discuss how it can be controlled by magnetic doping. Valley polarization by magnetic doping is also expected for other honeycomb materials with strong spin orbit coupling and the absence of inversion symmetry.
-
Optically initialized robust valley-polarized holes in monolayer WSe2
Hsu, Wei-Ting; Chen, Yen-Lun; Chen, Chiang-Hsiao; Liu, Pang-Shiuan; Hou, Tuo-Hung; Li, Lain-Jong; Chang, Wen-Hao
2015-01-01
a unique platform to develop such valleytronic devices, the anticipated long-lived valley pseudospin has not been observed yet. Here we demonstrate that robust valley-polarized holes in monolayer WSe2 can be initialized by optical pumping. Using time
-
LIQUIFIED NATURAL GAS (LNG) CARRIERS
Daniel Posavec; Katarina Simon; Matija Malnar
2010-01-01
Modern liquefied natural gas carriers are double-bottom ships classified according to the type of LNG tank. The tanks are specially designed to store natural gas cooled to -161°C, the boiling point of methane. Since LNG is highly flammable, special care must be taken when designing and operating the ship. The development of LNG carriers has begun in the middle of the twentieth century. LNG carrier storage space has gradually grown to the current maximum of 260000 m3. There are more than 300 L...
-
Electric double layer transistors with ferroelectric BaTiO3 channels
Ito, M.; Matsubara, Y.; Kozuka, Y.; Takahashi, K. S.; Kagawa, F.; Ye, J. T.; Iwasa, Y.; Ueno, K.; Tokura, Y.; Kawasaki, M.
2014-01-01
We report the surface conduction of a BaTiO3 thin film using electric double layer transistor (EDLT) structure. A transistor operation was observed at 220 K with an on/off ratio exceeding 10(5), demonstrating that ionic liquid gating is effective to induce carriers at the surface of ferroelectric
-
Directory of Open Access Journals (Sweden)
M. Liu
2013-11-01
Full Text Available Topography exerts influence on the spatial precipitation distribution over different scales, known typically at the large scale as the orographic effect, and at the small scale as the wind-drift rainfall (WDR effect. At the intermediate scale (1~10 km, which is characterized by secondary mountain valleys, topography also demonstrates some effect on the precipitation pattern. This paper investigates such intermediate-scale topographic effects on precipitation patterns, focusing on narrow-steep valleys in the complex terrain of southern Germany, based on the daily observations over a 48 yr period (1960~2007 from a high-density rain-gauge network covering two sub-areas, Baden-Wuerttemberg (BW and Bavaria (BY. Precipitation data at the valley and non-valley stations are compared under consideration of the daily general circulation patterns (CPs classified by a fuzzy rule-based algorithm. Scatter plots of precipitation against elevation demonstrate a different behavior of valley stations comparing to non-valley stations. A detailed study of the precipitation time series for selected station triplets, each consisting of a valley station, a mountain station and an open station have been investigated by statistical analysis with the Kolmogorov–Smirnov (KS test supplemented by the One-way analysis of variance (One-way ANOVA and a graphical comparison of the mean precipitation amounts. The results show an interaction of valley orientation and the direction of the CPs at the intermediate scale, i.e. when the valley is shielded from the CP which carries the precipitation, the precipitation amount within the valley is comparable to that on the mountain crest, and both larger than the precipitation at the open station. When the valley is open to the CP, the precipitation within the valley is similar to the open station but much less than that on the mountain. Such phenomenon where the precipitation is "blind" to the valleys at the intermediate scale
-
Wang, Haowei; Wang, Yishan; He, Bo; Li, Weile; Sulaman, Muhammad; Xu, Junfeng; Yang, Shengyi; Tang, Yi; Zou, Bingsuo
2016-07-20
With its properties of bandgap tunability, low cost, and substrate compatibility, colloidal quantum dots (CQDs) are becoming promising materials for optoelectronic applications. Additionally, solution-processed organic, inorganic, and hybrid ligand-exchange technologies have been widely used in PbS CQDs solar cells, and currently the maximum certified power conversion efficiency of 9.9% has been reported by passivation treatment of molecular iodine. Presently, there are still some challenges, and the basic physical mechanism of charge carriers in CQDs-based solar cells is not clear. Electrochemical impedance spectroscopy is a monitoring technology for current by changing the frequency of applied alternating current voltage, and it provides an insight into its electrical properties that cannot be measured by direct current testing facilities. In this work, we used EIS to analyze the recombination resistance, carrier lifetime, capacitance, and conductivity of two typical PbS CQD solar cells Au/PbS-TBAl/ZnO/ITO and Au/PbS-EDT/PbS-TBAl/ZnO/ITO, in this way, to better understand the charge carriers conduction mechanism behind in PbS CQD solar cells, and it provides a guide to design high-performance quantum-dots solar cells.
-
Energy Technology Data Exchange (ETDEWEB)
Martin, Mark A. [Bonneville Power Administration (BPA), Portland, OR (United States)
2002-04-16
Vegetation Management along the Rocky Reach – Maple Valley No. 1 Transmission Line ROW from structure 98/2 to structure 110/1. The transmission line is a 500 kV line. BPA proposes to clear targeted vegetation along access roads and around tower structures that may impede the operation and maintenance of the subject transmission line. BPA plans to conduct vegetation management along existing access road and around structure landings for the purpose of maintaining access to structures site. All work will be in accordance with the National Electrical Safety Code and BPA standards.
-
Valley plugs, land use, and phytogeomorphic response: Chapter 14
Pierce, Aaron R.; King, Sammy L.; Shroder, John F.
2013-01-01
Anthropogenic alteration of fluvial systems can disrupt functional processes that provide valuable ecosystem services. Channelization alters fluvial parameters and the connectivity of river channels to their floodplains which is critical for productivity, nutrient cycling, flood control, and biodiversity. The effects of channelization can be exacerbated by local geology and land-use activities, resulting in dramatic geomorphic readjustments including the formation of valley plugs. Considerable variation in the response of abiotic processes, including surface hydrology, subsurface hydrology, and sedimentation dynamics, to channelization and the formation of valley plugs. Altered abiotic processes associated with these geomorphic features and readjustments influence biotic processes including species composition, abundance, and successional processes. Considerable interest exists for restoring altered fluvial systems and their floodplains because of their social and ecological importance. Understanding abiotic and biotic responses of channelization and valley-plug formation within the context of the watershed is essential to successful restoration. This chapter focuses on the primary causes of valley-plug formation, resulting fluvial-geomorphic responses, vegetation responses, and restoration and research needs for these systems.
-
Bacterial Carriers for Glioblastoma Therapy
Directory of Open Access Journals (Sweden)
Nalini Mehta
2017-03-01
Full Text Available Treatment of aggressive glioblastoma brain tumors is challenging, largely due to diffusion barriers preventing efficient drug dosing to tumors. To overcome these barriers, bacterial carriers that are actively motile and programmed to migrate and localize to tumor zones were designed. These carriers can induce apoptosis via hypoxia-controlled expression of a tumor suppressor protein p53 and a pro-apoptotic drug, Azurin. In a xenograft model of human glioblastoma in rats, bacterial carrier therapy conferred a significant survival benefit with 19% overall long-term survival of >100 days in treated animals relative to a median survival of 26 days in control untreated animals. Histological and proteomic analyses were performed to elucidate the safety and efficacy of these carriers, showing an absence of systemic toxicity and a restored neural environment in treated responders. In the treated non-responders, proteomic analysis revealed competing mechanisms of pro-apoptotic and drug-resistant activity. This bacterial carrier opens a versatile avenue to overcome diffusion barriers in glioblastoma by virtue of its active motility in extracellular space and can lead to tailored therapies via tumor-specific expression of tumoricidal proteins.
-
Energy Technology Data Exchange (ETDEWEB)
An, Xing-Tao, E-mail: anxt@hku.hk
2015-03-20
The control of valley and spin degrees of freedom and the transport properties of electrons in a zigzag silicene nanoribbon modulated by the magnetic superlattices are investigated theoretically. Due to the valley–spin locking effect in silicene, the valley degree of freedom can be controlled by magnetic means. The valley or/and spin selection induced by the exchange field result in the perfect spin–valley filter and tunneling magnetoresistance effect in the double ferromagnetic barriers on the surface of the silicene nanoribbon. It is more interesting that there are valley-resolved minigaps and minibands in the zigzag silicene nanoribbon modulated by the magnetic superlattices which give rise to the periodically modulated spin (or/and valley) polarization and tunneling magnetoresistance. The results obtained may have certain practical significance in applications for future valleytronic and spintronic devices. - Highlights: • The valley can be controlled by a magnetic field in silicene. • The valley-resolved miniband transport is studied in the silicene superlattices. • There are the perfect spin–valley filter and tunneling magnetoresistance effect.
-
Ultrafast Control of Magnetism in Ferromagnetic Semiconductors via Photoexcited Transient Carriers
Energy Technology Data Exchange (ETDEWEB)
Cotoros, Ingrid A. [Univ. of California, Berkeley, CA (United States)
2008-12-01
The field of spintronics offers perspectives for seamless integration of coupled and inter-tunable electrical and magnetic properties in a single device. For integration of the spin degree of freedom with current electronic technology, new semiconductors are needed that show electrically-tunable magnetic properties at room temperature and above. Dilute magnetic semiconductors derived from III-V compounds, like GaMnAs and InMnAs, show coupled and tunable magnetic, transport, and optical properties, due to the fact that their ferromagnetism is hole-mediated. These unconventional materials are ideal systems for manipulating the magnetic order by changing the carrier polarization, population density, and energy band distribution of the complementary subsystem of holes. This is the main theme we cover in this thesis. In particular, we develop a unique setup by use of ultraviolet pump, near-infrared probe femtosecond laser pulses, that allows for magneto-optical Kerr effect (MOKE) spectroscopy experiments. We photo-excite transient carriers in our samples, and measure the induced transient magnetization dynamics. One set of experiments performed allowed us to observe for the first time enhancement of the ferromagnetic order in GaMnAs, on an ultrafast time scale of hundreds of picoseconds. The corresponding transient increase of Curie temperature (Tc, the temperature above which a ferromagnetic material loses its permanent magnetism) of about 1 K for our experimental conditions is a very promising result for potential spintronics applications, especially since it is seconded by observation of an ultrafast ferromagnetic to paramagnetic phase transition above Tc. In a different set of experiments, we "write" the magnetization in a particular orientation in the sample plane. Using an ultrafast scheme, we alter the distribution of holes in the system and detect signatures of the particular memory state in the subsequent magnetization dynamics, with unprecedented hundreds of
-
75 FR 48359 - Blackstone River Valley National Heritage Corridor Commission: Notice of Meeting
2010-08-10
... DEPARTMENT OF THE INTERIOR Office of the Secretary Blackstone River Valley National Heritage..., United States Code, that a meeting of the John H. Chafee Blackstone River Valley National Heritage..., Blackstone River Valley National Heritage Corridor Commission, One Depot Square, Woonsocket, RI 02895, Tel...
-
Basic Stand Alone Carrier Line Items PUF
U.S. Department of Health & Human Services — This release contains the Basic Stand Alone (BSA) Carrier Line Items Public Use Files (PUF) with information from Medicare Carrier claims. The CMS BSA Carrier Line...
-
Rock-fall potential in the Yosemite Valley, California
Wieczorek, G.F.; Morrissey, M.M.; Iovine, Giulio; Godt, Jonathan
1999-01-01
We used two methods of estimating rock-fall potential in the Yosemite Valley, California based on (1) physical evidence of previous rock-fall travel, in which the potential extends to the base of the talus, and (2) theoretical potential energy considerations, in which the potential can extend beyond the base of the talus, herein referred to as the rock-fall shadow. Rock falls in the valley commonly range in size from individual boulders of less than 1 m3 to moderate-sized falls with volumes of about 100,000 m3. Larger rock falls exceeding 100,000 m3, referred to as rock avalanches, are considered to be much less likely to occur based on the relatively few prehistoric rock-fall avalanche deposits in the Yosemite Valley. Because the valley has steep walls and is relatively narrow, there are no areas that are absolutely safe from large rock avalanches. The map shows areas of rock-fall potential, but does not predict when or how frequently a rock fall will occur. Consequently, neither the hazard in terms of probability of a rock fall at any specific location, nor the risk to people or facilities to such events can be assessed from this map.
-
Nasal carriers are more likely to acquire exogenous Staphylococcus aureus strains than non-carriers.
Ghasemzadeh-Moghaddam, H; Neela, V; van Wamel, W; Hamat, R A; Shamsudin, M Nor; Hussin, N Suhaila Che; Aziz, M N; Haspani, M S Mohammad; Johar, A; Thevarajah, S; Vos, M; van Belkum, A
2015-11-01
We performed a prospective observational study in a clinical setting to test the hypothesis that prior colonization by a Staphylococcus aureus strain would protect, by colonization interference or other processes, against de novo colonization and, hence, possible endo-infections by newly acquired S. aureus strains. Three hundred and six patients hospitalized for >7 days were enrolled. For every patient, four nasal swabs (days 1, 3, 5, and 7) were taken, and patients were identified as carriers when a positive nasal culture for S. aureus was obtained on day 1 of hospitalization. For all patients who acquired methicillin-resistant S. aureus (MRSA) or methicillin-susceptible S. aureus via colonization and/or infection during hospitalization, strains were collected. We note that our study may suffer from false-negative cultures, local problems with infection control and hospital hygiene, or staphylococcal carriage at alternative anatomical sites. Among all patients, 22% were prior carriers of S. aureus, including 1.9% whom carried MRSA upon admission. The overall nasal staphylococcal carriage rate among dermatology patients was significantly higher than that among neurosurgery patients (n = 25 (55.5%) vs. n = 42 (16.1%), p 0.005). This conclusion held when the carriage definition included individuals who were nasal culture positive on day 1 and day 3 of hospitalization (p 0.0001). All MRSA carriers were dermatology patients. There was significantly less S. aureus acquisition among non-carriers than among carriers during hospitalization (p 0.005). The mean number of days spent in the hospital before experiencing MRSA acquisition in nasal carriers was 5.1, which was significantly lower than the score among non-carriers (22 days, p 0.012). In conclusion, we found that nasal carriage of S. aureus predisposes to rather than protects against staphylococcal acquisition in the nose, thereby refuting our null hypothesis. Copyright © 2015 European Society of Clinical
-
Radiation processing of temperate fruits of Kashmir valley
International Nuclear Information System (INIS)
Hussain, Peerzada R.; Meena, Raghuveer S.; Dar, Mohd A.; Wani, Ali M.
2011-01-01
Kashmir valley is famous for its temperate horticulture. Main temperate fruits grown commercially in the valley include apple, pear, peach, plum, cherry, strawberry and apricot. These fruits being perishable and susceptible to microbial spoilage, have a short shelf-life. The short shelf-life in an impediment in their transportation and marketing and results in huge losses. Study was carried out at NRL, Srinagar to investigate the effect of gamma irradiation on the keeping quality of most of these fruits. The effect of gamma irradiation alone and in combination with other techniques like controlled low temperature storage, edible polysaccharide coating and calcium chloride treatment was studied in detail. The results revealed that there is a great potential for the use of radiation in extending the storage life of most of the temperate fruits produced in the valley of Kashmir. (author)
-
Regolith transport in the Dry Valleys of Antarctica
Putkonen, J.; Rosales, M.; Turpen, N.; Morgan, D.; Balco, G.; Donaldson, M.
2007-01-01
The stability of ground surface and preservation of landforms that record past events and environments is of great importance as the geologic and climatic history is evaluated in the Dry Valleys of Antarctica. Currently little is known about the regolith transport that tends to eradicate and confound this record and regolith transport is itself an environmental indicator. Based on analyses of repeat photographs, soil traps, and pebble transport distances, it was found that there is a large spatial variation in topographic diffusivities at least in the annual basis and that counter intuitively the highest topographic diffusivities are found in the alpine valleys that are located farther inland from the coast where the lowest topographic diffusivities were recorded. An average topographic diffusivity for the Dry Valleys was determined to be 10M-5–10-4 m2
-
Guo, Jingxing; Zhang, Tao; Hu, Chengguo; Fu, Lei
2015-01-01
In recent years, graphene-based enzyme biosensors have received considerable attention due to their excellent performance. Enormous efforts have been made to utilize graphene oxide and its derivatives as carriers of enzymes for biosensing. However, the performance of these sensors is limited by the drawbacks of graphene oxide such as slow electron transfer rate, low catalytic area and poor conductivity. Here, we report a new graphene-based enzyme carrier, i.e. a highly conductive 3D nitrogen-doped graphene structure (3D-NG) grown by chemical vapour deposition, for highly effective enzyme-based biosensors. Owing to the high conductivity, large porosity and tunable nitrogen-doping ratio, this kind of graphene framework shows outstanding electrical properties and a large surface area for enzyme loading and biocatalytic reactions. Using glucose oxidase (GOx) as a model enzyme and chitosan (CS) as an efficient molecular binder of the enzyme, our 3D-NG based biosensors show extremely high sensitivity for the sensing of glucose (226.24 μA mM-1 m-2), which is almost an order of magnitude higher than those reported in most of the previous studies. The stable adsorption and outstanding direct electrochemical behaviour of the enzyme on the nanocomposite indicate the promising application of this 3D enzyme carrier in high-performance electrochemical biosensors or biofuel cells.In recent years, graphene-based enzyme biosensors have received considerable attention due to their excellent performance. Enormous efforts have been made to utilize graphene oxide and its derivatives as carriers of enzymes for biosensing. However, the performance of these sensors is limited by the drawbacks of graphene oxide such as slow electron transfer rate, low catalytic area and poor conductivity. Here, we report a new graphene-based enzyme carrier, i.e. a highly conductive 3D nitrogen-doped graphene structure (3D-NG) grown by chemical vapour deposition, for highly effective enzyme
-
Diversity and ecological ranges of plant species from dry inter-Andean valleys
DEFF Research Database (Denmark)
Quintana, Catalina
found on steep slopes and in ravines. These areas of original dry valley vegetation preserve many wild relatives of cultivated plants on the one hand and old lineages of other wild plant groups. Dry inter-Andean valleys (DIAVs) in Ecuador therefore makeup a biodiversity hot spot for both plants......Dry valleys in the American Andes and other mountains have provided excellent agricultural lands since millennia. Besides agriculture, wood extraction and the establishment of urban areas have diminished the native vegetation of these valleys. Consequently the original vegetation is now mostly...... and animals, but unfortunately only very few botanical studies have been carried out in these areas. This thesis intends to shed light on the vegetation of the Dry Ecuadorean Inter-Andean Valleys in four chapters, each with a different focus. 1) A review paper that summarizes all scientific knowledge...
-
75 FR 17756 - Blackstone River Valley National Heritage Corridor Commission: Notice of Meeting
2010-04-07
... DEPARTMENT OF THE INTERIOR Office of the Secretary Blackstone River Valley National Heritage..., United States Code, that a meeting of the John H. Chafee Blackstone River Valley National Heritage... the meeting to: Jan H. Reitsma, Executive Director, John H. Chafee, Blackstone River Valley National...
-
Phase control of higher spectral components in the presence of a static electric field
International Nuclear Information System (INIS)
Zhang Chaojin; Yang Weifeng; Song Xiaohong; Xu Zhizhan
2009-01-01
We investigate the higher spectral component generations driven by a few-cycle laser pulse in a dense medium when a static electric field is present. Our results show that, when assisted by a static electric field, the dependence of the transmitted laser spectrum on the carrier-envelope phase (CEP) is significantly increased. Continuum and distinct peaks can be achieved by controlling the CEP of the few-cycle ultrashort laser pulse. Such a strong variation is due to the fact that the presence of the static electric field modifies the waveform of the combined electric field, which further affects the spectral distribution of the generated higher spectral components.
-
Barrier controlled carrier trapping of extended defects in CdZnTe detector
International Nuclear Information System (INIS)
Guo, Rongrong; Jie, Wanqi; Xu, Yadong; Yu, Hui; Zha, Gangqiang; Wang, Tao; Ren, Jie
2015-01-01
Transient current techniques using alpha particle source were utilized to study the influence of extended defects on the electron drift time and the detector performance of CdZnTe crystals. Different from the case of trapping through isolated point defect, a barrier controlled trapping model was used to explain the mechanism of carrier trapping at the extended defects. The effect of extended defects on the photoconductance was studied by laser beam induced transient current (LBIC) measurement. The results demonstrate that the Schottky-type depletion space charge region is induced at the vicinity of the extended defects, which further distorts the internal electric field distribution and affects the carrier trajectory in CdZnTe crystals. The relationship between the electron drift time and detector performance has been established. - Highlights: • The barrier controlled trapping model was developed around extended defects. • Electron mobility and E-field distribution were distorted by space charge depletion region. • Extended defects act as a recombination-activated region. • The relationships between extended defects and detector performance were established
-
West Valley Demonstration Project Annual Site Environmental Report Calendar Year 2004
Energy Technology Data Exchange (ETDEWEB)
West Valley Nuclear Services Company (WVNSCO) and URS Group, Inc.
2005-09-30
Annual Site Environmental Report for the West Valley Demonstration Project (WVDP) for Calendar Year 2004. The report summarizes the environmental protection program at the West Valley Demonstration Project for CY 2004.
-
West Valley Demonstration Project Annual Site Environmental Report Calendar Year 2004
International Nuclear Information System (INIS)
2005-01-01
Annual Site Environmental Report for the West Valley Demonstration Project (WVDP) for Calendar Year 2004. The report summarizes the environmental protection program at the West Valley Demonstration Project for CY 2004
-
International Nuclear Information System (INIS)
Carpene, E; Mancini, E; Dallera, C; Schwen, D; Ronning, C; Silvestri, S De
2007-01-01
We report the investigation of the ultrafast carrier dynamics in thin tetrahedral amorphous carbon films by means of femtosecond time-resolved reflectivity. We estimated the electron-phonon relaxation time of a few hundred femtoseconds and we observed that under low optical excitation photo-generated carriers decay according to two distinct mechanisms attributed to trapping by defect states and direct electron-hole recombination. With high excitation, when photo-carrier and trap densities are comparable, a unique temporal evolution develops, as the time dependence of the trapping process becomes degenerate with the electron-hole recombination. This experimental evidence highlights the role of defects in the ultrafast electronic dynamics and is not specific to this particular form of carbon, but has general validity for amorphous and disordered semiconductors
-
No differences in brain microstructure between young KIBRA-C carriers and non-carriers.
Hu, Li; Xu, Qunxing; Li, Jizhen; Wang, Feifei; Xu, Xinghua; Sun, Zhiyuan; Ma, Xiangxing; Liu, Yong; Wang, Qing; Wang, Dawei
2018-01-02
KIBRA rs17070145 polymorphism is associated with variations in memory function and the microstructure of related brain areas. Diffusion kurtosis imaging (DKI) as an extension of diffusion tensor imaging that can provide more information about changes in microstructure, based on the idea that water diffusion in biological tissues is heterogeneous due to structural hindrance and restriction. We used DKI to explore the relationship between KIBRA gene polymorphism and brain microstructure in young adults. We recruited 100 healthy young volunteers, including 53 TT carriers and 47 C allele carriers. No differences were detected between the TT homozygotes and C-allele carriers for any diffusion and kurtosis parameter. These results indicate KIBRA rs17070145 polymorphism likely has little or no effect on brain microstructure in young adults.
-
Safety requirements for the Pu carriers
International Nuclear Information System (INIS)
Mishima, H.
1993-01-01
Ministry of Transport of Japan has now set about studying requirements for Pu carriers to ensure safety. It was first studied what the basic concept of safe carriage of Pu should be, and the basic ideas have been worked out. Next the requirements for the Pu carriers were studied based on the above. There are at present no international requirements of construction and equipment for the nuclear-material carriers, but MOT of Japan has so far required special construction and equipment for the nuclear-material carriers which carry a large amount of radioactive material, such as spent fuel or low level radioactive waste, corresponding to the level of the respective potential hazard. The requirements of construction and equipment of the Pu carriers have been established considering the difference in heat generation between Pu and spent fuel, physical protection, and so forth, in addition to the above basic concept. (J.P.N.)