Ultrafast all-optical arithmetic logic based on hydrogenated amorphous silicon microring resonators

Science.gov (United States)

Gostimirovic, Dusan; Ye, Winnie N.

2016-03-01

For decades, the semiconductor industry has been steadily shrinking transistor sizes to fit more performance into a single silicon-based integrated chip. This technology has become the driving force for advances in education, transportation, and health, among others. However, transistor sizes are quickly approaching their physical limits (channel lengths are now only a few silicon atoms in length), and Moore's law will likely soon be brought to a stand-still despite many unique attempts to keep it going (FinFETs, high-k dielectrics, etc.). This technology must then be pushed further by exploring (almost) entirely new methodologies. Given the explosive growth of optical-based long-haul telecommunications, we look to apply the use of high-speed optics as a substitute to the digital model; where slow, lossy, and noisy metal interconnections act as a major bottleneck to performance. We combine the (nonlinear) optical Kerr effect with a single add-drop microring resonator to perform the fundamental AND-XOR logical operations of a half adder, by all-optical means. This process is also applied to subtraction, higher-order addition, and the realization of an all-optical arithmetic logic unit (ALU). The rings use hydrogenated amorphous silicon as a material with superior nonlinear properties to crystalline silicon, while still maintaining CMOS-compatibility and the many benefits that come with it (low cost, ease of fabrication, etc.). Our method allows for multi-gigabit-per-second data rates while maintaining simplicity and spatial minimalism in design for high-capacity manufacturing potential.

Ultrafast chiroptical spectroscopy: Monitoring optical activity in quick time

Directory of Open Access Journals (Sweden)

Hanju Rhee

2011-12-01

Full Text Available Optical activity spectroscopy provides rich structural information of biologically important molecules in condensed phases. However, a few intrinsic problems of conventional method based on electric field intensity measurement scheme prohibited its extension to time domain technique. We have recently developed new types of optical activity spectroscopic methods capable of measuring chiroptical signals with femtosecond pulses. It is believed that these novel approaches will be applied to a variety of ultrafast chiroptical studies.

Ultra-high-speed Optical Signal Processing using Silicon Photonics

DEFF Research Database (Denmark)

Oxenløwe, Leif Katsuo; Ji, Hua; Jensen, Asger Sellerup

with a photonic layer on top to interconnect them. For such systems, silicon is an attractive candidate enabling both electronic and photonic control. For some network scenarios, it may be beneficial to use optical on-chip packet switching, and for high data-density environments one may take advantage...... of the ultra-fast nonlinear response of silicon photonic waveguides. These chips offer ultra-broadband wavelength operation, ultra-high timing resolution and ultra-fast response, and when used appropriately offer energy-efficient switching. In this presentation we review some all-optical functionalities based...... on silicon photonics. In particular we use nano-engineered silicon waveguides (nanowires) [1] enabling efficient phasematched four-wave mixing (FWM), cross-phase modulation (XPM) or self-phase modulation (SPM) for ultra-high-speed optical signal processing of ultra-high bit rate serial data signals. We show...

Progress in the Development of SERS-Active Substrates Based on Metal-Coated Porous Silicon.

Science.gov (United States)

Bandarenka, Hanna V; Girel, Kseniya V; Zavatski, Sergey A; Panarin, Andrei; Terekhov, Sergei N

2018-05-21

The present work gives an overview of the developments in surface-enhanced Raman scattering (SERS) with metal-coated porous silicon used as an active substrate. We focused this review on the research referenced to SERS-active materials based on porous silicon, beginning from the patent application in 2002 and enclosing the studies of this year. Porous silicon and metal deposition technologies are discussed. Since the earliest studies, a number of fundamentally different plasmonic nanostructures including metallic dendrites, quasi-ordered arrays of metallic nanoparticles (NPs), and metallic nanovoids have been grown on porous silicon, defined by the morphology of this host material. SERS-active substrates based on porous silicon have been found to combine a high and well-reproducible signal level, storage stability, cost-effective technology and handy use. They make it possible to identify and study many compounds including biomolecules with a detection limit varying from milli- to femtomolar concentrations. The progress reviewed here demonstrates the great prospects for the extensive use of the metal-coated porous silicon for bioanalysis by SERS-spectroscopy.

Progress in the Development of SERS-Active Substrates Based on Metal-Coated Porous Silicon

Directory of Open Access Journals (Sweden)

Hanna V. Bandarenka

2018-05-01

Full Text Available The present work gives an overview of the developments in surface-enhanced Raman scattering (SERS with metal-coated porous silicon used as an active substrate. We focused this review on the research referenced to SERS-active materials based on porous silicon, beginning from the patent application in 2002 and enclosing the studies of this year. Porous silicon and metal deposition technologies are discussed. Since the earliest studies, a number of fundamentally different plasmonic nanostructures including metallic dendrites, quasi-ordered arrays of metallic nanoparticles (NPs, and metallic nanovoids have been grown on porous silicon, defined by the morphology of this host material. SERS-active substrates based on porous silicon have been found to combine a high and well-reproducible signal level, storage stability, cost-effective technology and handy use. They make it possible to identify and study many compounds including biomolecules with a detection limit varying from milli- to femtomolar concentrations. The progress reviewed here demonstrates the great prospects for the extensive use of the metal-coated porous silicon for bioanalysis by SERS-spectroscopy.

Ultrafast pulse generation in integrated arrays of anapole nanolasers

KAUST Repository

Gongora, J. S. Totero

2017-11-02

One of the main challenges in photonics is the integration of ultrafast coherent sources in silicon compatible platforms at the nanoscale [1]. Generally, the emission of ultra-short pulses is achieved by synchronizing the cavity modes of the system via external active components, such as, e.g., Q-switch or saturable absorbers. Consequently, the required optical setups are complex and difficult to integrate on-chip. To address these difficulties, we propose a novel type of integrated source based on the spontaneous synchronization of several near-field nanolasers. We design our near-field lasers by considering the nonlinear amplification of non-radiating Anapole modes [2]. Anapoles represent an intriguing non-conventional state of radiation, whose excitation is responsible for the formation of scattering suppression states in dielectric nanostructures [3]. Due to their inherent near-field emission properties, an ensemble of anapole-based nanolasers represent an ideal candidate to investigate and tailor spontaneous synchronization phenomena in a silicon-compatible framework. Additionally, their mutual non-linear interaction can be precisely controlled within standard nanofabrication tolerances.

Ultrafast terahertz scanning tunneling microscopy with atomic resolution

DEFF Research Database (Denmark)

Jelic, Vedran; Iwaszczuk, Krzysztof; Nguyen, Peter H.

2016-01-01

We demonstrate that ultrafast terahertz scanning tunneling microscopy (THz-STM) can probe single atoms on a silicon surface with simultaneous sub-nanometer and sub-picosecond spatio-temporal resolution. THz-STM is established as a new technique for exploring high-field non-equilibrium tunneling...

Ultrafast triggered transient energy storage by atomic layer deposition into porous silicon for integrated transient electronics

Science.gov (United States)

Douglas, Anna; Muralidharan, Nitin; Carter, Rachel; Share, Keith; Pint, Cary L.

2016-03-01

Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics.Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics. Electronic supplementary information (ESI) available: (i) Experimental details for ALD and material fabrication, ellipsometry film thickness, preparation of gel electrolyte and separator, details for electrochemical measurements, HRTEM image of VOx coated porous silicon, Raman spectroscopy for VOx as-deposited as well as annealed in air for 1 hour at 450 °C, SEM and transient behavior dissolution tests of uniformly coated VOx on

A low-cost, ultra-fast and ultra-low noise preamplifier for silicon avalanche photodiodes

Science.gov (United States)

Gasmi, Khaled

2018-02-01

An ultra-fast and ultra-low noise preamplifier for amplifying the fast and weak electrical signals generated by silicon avalanche photodiodes has been designed and developed. It is characterized by its simplicity, compactness, reliability and low cost of construction. A very wide bandwidth of 300 MHz, a very good linearity from 1 kHz to 280 MHz, an ultra-low noise level at the input of only 1.7 nV Hz-1/2 and a very good stability are its key features. The compact size (70 mm  ×  90 mm) and light weight (45 g), as well as its excellent characteristics, make this preamplifier very competitive compared to any commercial preamplifier. The preamplifier, which is a main part of the detection system of a homemade laser remote sensing system, has been successfully tested. In addition, it is versatile and can be used in any optical detection system requiring high speed and very low noise electronics.

Interpretation of photocurrent correlation measurements used for ultrafast photoconductive switch characterization

DEFF Research Database (Denmark)

Jacobsen, R. H.; Birkelund, Karen; Holst, T.

1996-01-01

of the switch. By using both photocurrent measurements and terahertz spectroscopy we verify the importance of space-charge effects on the carrier dynamics. Photocurrent nonlinearities and coherent effects are discussed as they appear in the correlation signals. An analysis based on a simple model allows......Photocurrent correlation measurements used for the characterization of ultrafast photoconductive switches based on GaAs and silicon-on-sapphire are demonstrated. The correlation signal arises from the interplay of the photoexcited carriers, the dynamics of the bias field and a subsequent recharging...

Feed-forward motor control of ultrafast, ballistic movements.

Science.gov (United States)

Kagaya, K; Patek, S N

2016-02-01

To circumvent the limits of muscle, ultrafast movements achieve high power through the use of springs and latches. The time scale of these movements is too short for control through typical neuromuscular mechanisms, thus ultrafast movements are either invariant or controlled prior to movement. We tested whether mantis shrimp (Stomatopoda: Neogonodactylus bredini) vary their ultrafast smashing strikes and, if so, how this control is achieved prior to movement. We collected high-speed images of strike mechanics and electromyograms of the extensor and flexor muscles that control spring compression and latch release. During spring compression, lateral extensor and flexor units were co-activated. The strike initiated several milliseconds after the flexor units ceased, suggesting that flexor activity prevents spring release and determines the timing of strike initiation. We used linear mixed models and Akaike's information criterion to serially evaluate multiple hypotheses for control mechanisms. We found that variation in spring compression and strike angular velocity were statistically explained by spike activity of the extensor muscle. The results show that mantis shrimp can generate kinematically variable strikes and that their kinematics can be changed through adjustments to motor activity prior to the movement, thus supporting an upstream, central-nervous-system-based control of ultrafast movement. Based on these and other findings, we present a shishiodoshi model that illustrates alternative models of control in biological ballistic systems. The discovery of feed-forward control in mantis shrimp sets the stage for the assessment of targets, strategic variation in kinematics and the role of learning in ultrafast animals. © 2016. Published by The Company of Biologists Ltd.

Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells

Energy Technology Data Exchange (ETDEWEB)

Bazin, Alexandre; Monnier, Paul; Beaudoin, Grégoire; Sagnes, Isabelle; Raj, Rama [Laboratoire de Photonique et de Nanostructures (CNRS UPR20), Route de Nozay, Marcoussis 91460 (France); Lenglé, Kevin; Gay, Mathilde; Bramerie, Laurent [Université Européenne de Bretagne (UEB), 5 Boulevard Laënnec, 35000 Rennes (France); CNRS-Foton Laboratory (UMR 6082), Enssat, BP 80518, 22305 Lannion Cedex (France); Braive, Rémy; Raineri, Fabrice, E-mail: fabrice.raineri@lpn.cnrs.fr [Laboratoire de Photonique et de Nanostructures (CNRS UPR20), Route de Nozay, Marcoussis 91460 (France); Université Paris Diderot, Sorbonne Paris Cité, 75207 Paris Cedex 13 (France)

2014-01-06

Ultrafast switching with low energies is demonstrated using InP photonic crystal nanocavities embedding InGaAs surface quantum wells heterogeneously integrated to a silicon on insulator waveguide circuitry. Thanks to the engineered enhancement of surface non radiative recombination of carriers, switching time is obtained to be as fast as 10 ps. These hybrid nanostructures are shown to be capable of achieving systems level performance by demonstrating error free wavelength conversion at 10 Gbit/s with 6 mW switching powers.

Oxygen Activated, Palladium Nanoparticle Catalyzed, Ultrafast Cross-Coupling of Organolithium Reagents

NARCIS (Netherlands)

Heijnen, Dorus; Tosi, Filippo; Vila, Carlos; Stuart, Marc C. A.; Elsinga, Philip H.; Szymanski, Wiktor; Feringa, Ben L.

2017-01-01

The discovery of an ultrafast cross-coupling of alkyland aryllithium reagents with a range of aryl bromides is presented. The essential role of molecular oxygen to form the active palladium catalyst was established; palladium nanoparticles that are highly active in cross-coupling reactions with

Discrete decoding based ultrafast multidimensional nuclear magnetic resonance spectroscopy

International Nuclear Information System (INIS)

Wei, Zhiliang; Lin, Liangjie; Ye, Qimiao; Li, Jing; Cai, Shuhui; Chen, Zhong

2015-01-01

The three-dimensional (3D) nuclear magnetic resonance (NMR) spectroscopy constitutes an important and powerful tool in analyzing chemical and biological systems. However, the abundant 3D information arrives at the expense of long acquisition times lasting hours or even days. Therefore, there has been a continuous interest in developing techniques to accelerate recordings of 3D NMR spectra, among which the ultrafast spatiotemporal encoding technique supplies impressive acquisition speed by compressing a multidimensional spectrum in a single scan. However, it tends to suffer from tradeoffs among spectral widths in different dimensions, which deteriorates in cases of NMR spectroscopy with more dimensions. In this study, the discrete decoding is proposed to liberate the ultrafast technique from tradeoffs among spectral widths in different dimensions by focusing decoding on signal-bearing sites. For verifying its feasibility and effectiveness, we utilized the method to generate two different types of 3D spectra. The proposed method is also applicable to cases with more than three dimensions, which, based on the experimental results, may widen applications of the ultrafast technique

Discrete decoding based ultrafast multidimensional nuclear magnetic resonance spectroscopy

Science.gov (United States)

Wei, Zhiliang; Lin, Liangjie; Ye, Qimiao; Li, Jing; Cai, Shuhui; Chen, Zhong

2015-07-01

The three-dimensional (3D) nuclear magnetic resonance (NMR) spectroscopy constitutes an important and powerful tool in analyzing chemical and biological systems. However, the abundant 3D information arrives at the expense of long acquisition times lasting hours or even days. Therefore, there has been a continuous interest in developing techniques to accelerate recordings of 3D NMR spectra, among which the ultrafast spatiotemporal encoding technique supplies impressive acquisition speed by compressing a multidimensional spectrum in a single scan. However, it tends to suffer from tradeoffs among spectral widths in different dimensions, which deteriorates in cases of NMR spectroscopy with more dimensions. In this study, the discrete decoding is proposed to liberate the ultrafast technique from tradeoffs among spectral widths in different dimensions by focusing decoding on signal-bearing sites. For verifying its feasibility and effectiveness, we utilized the method to generate two different types of 3D spectra. The proposed method is also applicable to cases with more than three dimensions, which, based on the experimental results, may widen applications of the ultrafast technique.

Novel silicone-based polymer containing active methylene designed for the removal of indoor formaldehyde

Energy Technology Data Exchange (ETDEWEB)

Niu, Song, E-mail: niusong84@163.com; Yan, Hongxia, E-mail: hongxiayan@nwpu.edu.cn

2015-04-28

Highlights: • A novel silicone-based polymer with active methylene was explored. • Surface tension of liquid paints could be lowered using the polymer. • The polymer was easy to migrate toward the air-coating interface. • Free HCHO could effectively be removed using the polymer. • A lights on HCHO reduction without complicated preparation procedure was shielded. - Abstract: Indoor air pollution is caused inevitably due to complicated home decoration, in which formaldehyde is one of the most typical pollutants. It will be a convenient, economical and effective strategy to remove indoor formaldehyde if imparting a feature of formaldehyde removal to decorative coatings. We have successfully explored a novel silicone-based polymer containing active methylene used as a formaldehyde absorbent in coatings via a straightforward transesterification process using inexpensive and easily available chemicals. The polymer has been characterized by {sup 13}C NMR, FTIR, GC and GPC. Formaldehyde removal capacity of the coating films containing different contents of the polymer has been investigated. The results indicated that coatings incorporating 4 wt% of the polymer could make the coating films exhibit significant improvement on formaldehyde removal including purificatory performance (>85%) and durability of purificatory effect (>60%), compared to those consisting of absorbents without any silicon, and improve yellowing resistance performance, while other properties, such as gloss, adhesion, pencil hardness, flexibility and impact resistance, were kept almost unaffected. The chemical absorption process of the silicone-based polymer filled in interior decorative coatings is demonstrated as a promising technology to purify indoor formaldehyde and thus can reduce the harm to individuals.

rf streak camera based ultrafast relativistic electron diffraction.

Science.gov (United States)

Musumeci, P; Moody, J T; Scoby, C M; Gutierrez, M S; Tran, T

2009-01-01

We theoretically and experimentally investigate the possibility of using a rf streak camera to time resolve in a single shot structural changes at the sub-100 fs time scale via relativistic electron diffraction. We experimentally tested this novel concept at the UCLA Pegasus rf photoinjector. Time-resolved diffraction patterns from thin Al foil are recorded. Averaging over 50 shots is required in order to get statistics sufficient to uncover a variation in time of the diffraction patterns. In the absence of an external pump laser, this is explained as due to the energy chirp on the beam out of the electron gun. With further improvements to the electron source, rf streak camera based ultrafast electron diffraction has the potential to yield truly single shot measurements of ultrafast processes.

A Recirculating Linac-Based Facility for Ultrafast X-Ray Science

International Nuclear Information System (INIS)

Corlett, J. N.; Barletta, W. A.; DeSantis, S.; Doolittle, L.; Fawley, W. M.; Green, M.A.; Heimann, P.; Leone, S.; Lidia, S.; Li, D.; Ratti, A.; Robinson, K.; Schoenlein, R.; Staples, J.; Wan, W.; Wells, R.; Wolski, A.; Zholents, A.; Parmigiani, F.; Placidi, M.; Pirkl, W.; Rimmer, R. A.; Wang, S.

2003-01-01

We present an updated design for a proposed source of ultra-fast synchrotron radiation pulses based on a recirculating superconducting linac [1,2], in particular the incorporation of EUV and soft x-ray production. The project has been named LUX--Linac-based Ultrafast X-ray facility. The source produces intense x-ray pulses with duration of 10-100 fs at a 10 kHz repetition rate, with synchronization of 10's fs, optimized for the study of ultra-fast dynamics. The photon range covers the EUV to hard x-ray spectrum by use of seeded harmonic generation in undulators, and a specialized technique for ultra-short pulse photon production in the 1-10 keV range. High brightness rf photocathodes produce electron bunches which are optimized either for coherent emission in free electron lasers, or to provide a large x/y emittance ration and small vertical emittance which allows for manipulation to produce short-pulse hard x-rays. An injector linac accelerates the beam to 120 MeV, and is followed by f our passes through a 600-720 MeV recirculating linac. We outline the major technical components of the proposed facility

Ultrafast, laser-based, x-ray science: the dawn of atomic-scale cinematography

International Nuclear Information System (INIS)

Barty, C.P.J.

2000-01-01

The characteristics of ultrafast chirped pulse amplification systems are reviewed. Application of ultrafast chirped pulse amplification to the generation of femtosecond, incoherent, 8-keV line radiation is outlined and the use of femtosecond laser-based, x-rays for novel time-resolved diffraction studies of crystalline dynamics with sub-picosecond temporal resolution and sub-picometer spatial resolution is reviewed in detail. Possible extensions of laser-based, x-ray technology and evaluation of alternative x-ray approaches for time-resolved studies of the atomic scale dynamics are given. (author)

Ultrafast, laser-based, x-ray science: the dawn of atomic-scale cinematography

Energy Technology Data Exchange (ETDEWEB)

Barty, C.P.J. [University of California, Department of Applied Mechanics and Engineering Science, Urey Hall, Mali Code 0339, San Diego, La Jolla, CA (United States)

2000-03-01

The characteristics of ultrafast chirped pulse amplification systems are reviewed. Application of ultrafast chirped pulse amplification to the generation of femtosecond, incoherent, 8-keV line radiation is outlined and the use of femtosecond laser-based, x-rays for novel time-resolved diffraction studies of crystalline dynamics with sub-picosecond temporal resolution and sub-picometer spatial resolution is reviewed in detail. Possible extensions of laser-based, x-ray technology and evaluation of alternative x-ray approaches for time-resolved studies of the atomic scale dynamics are given. (author)

Impact ionization dynamics in silicon by MV/cm THz fields

DEFF Research Database (Denmark)

Tarekegne, Abebe Tilahun; Hirori, Hideki; Tanaka, Koichiro

2017-01-01

We investigate the dynamics of the impact ionization (IMI) process in silicon in extremely high fields in the MV/cm range and at low initial carrier concentrations; conditions that are not accessible with conventional transport measurements. We use ultrafast measurements with high-intensity terah......We investigate the dynamics of the impact ionization (IMI) process in silicon in extremely high fields in the MV/cm range and at low initial carrier concentrations; conditions that are not accessible with conventional transport measurements. We use ultrafast measurements with high......-intensity terahertz pulses to show that IMI is significantly more efficient at lower than at higher initial carrier densities. Specifically, in the case of silicon with an intrinsic carrier concentration (∼1010 cm−3), the carrier multiplication process can generate more than 108 electrons from just a single free...

PREFACE: Ultrafast biophotonics Ultrafast biophotonics

Science.gov (United States)

Gu, Min; Reid, Derryck; Ben-Yakar, Adela

2010-08-01

The use of light to explore biology can be traced to the first observations of tissue made with early microscopes in the mid-seventeenth century, and has today evolved into the discipline which we now know as biophotonics. This field encompasses a diverse range of activities, each of which shares the common theme of exploiting the interaction of light with biological material. With the rapid advancement of ultrafast optical technologies over the last few decades, ultrafast lasers have increasingly found applications in biophotonics, to the extent that the distinctive new field of ultrafast biophotonics has now emerged, where robust turnkey ultrafast laser systems are facilitating cutting-edge studies in the life sciences to take place in everyday laboratories. The broad spectral bandwidths, precision timing resolution, low coherence and high peak powers of ultrafast optical pulses provide unique opportunities for imaging and manipulating biological systems. Time-resolved studies of bio-molecular dynamics exploit the short pulse durations from such lasers, while other applications such as optical coherence tomography benefit from the broad optical bandwidths possible by using super-continuum generation and additionally allowing for high speed imaging with speeds as high as 47 000 scans per second. Continuing progress in laser-system technology is accelerating the adoption of ultrafast techniques across the life sciences, both in research laboratories and in clinical applications, such as laser-assisted in situ keratomileusis (LASIK) eye surgery. Revolutionizing the field of optical microscopy, two-photon excitation fluorescence (TPEF) microscopy has enabled higher spatial resolution with improved depth penetration into biological specimens. Advantages of this nonlinear optical process include: reduced photo-interactions, allowing for extensive imaging time periods; simultaneously exciting multiple fluorescent molecules with only one excitation wavelength; and

Lasing cavities and ultra-fast switch based on self-collimation of photonic crystal

International Nuclear Information System (INIS)

Zhao Deyin; Zhou Chuanhong; Gong Qian; Jiang Xunya

2008-01-01

The lasing cavities and ultra-fast switch based on the self-collimation (SC) of photonic crystal have been studied in this work. Some special properties of these devices are demonstrated, such as the higher quality factors and concise integration of the lasing cavities, the tolerance of the non-parallel reflectors in Fabry-Perot cavities. With nonlinearity, the ultra-fast switch can also be realized around the SC frequency. All these functional devices are designed based on the strong beam confinement of SC

Lasing cavities and ultra-fast switch based on self-collimation of photonic crystal

Energy Technology Data Exchange (ETDEWEB)

Zhao Deyin; Zhou Chuanhong; Gong Qian; Jiang Xunya [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)], E-mail: xyjiang@mit.edu

2008-06-07

The lasing cavities and ultra-fast switch based on the self-collimation (SC) of photonic crystal have been studied in this work. Some special properties of these devices are demonstrated, such as the higher quality factors and concise integration of the lasing cavities, the tolerance of the non-parallel reflectors in Fabry-Perot cavities. With nonlinearity, the ultra-fast switch can also be realized around the SC frequency. All these functional devices are designed based on the strong beam confinement of SC.

Ultrafast Laser-Based Spectroscopy and Sensing: Applications in LIBS, CARS, and THz Spectroscopy

Science.gov (United States)

Leahy-Hoppa, Megan R.; Miragliotta, Joseph; Osiander, Robert; Burnett, Jennifer; Dikmelik, Yamac; McEnnis, Caroline; Spicer, James B.

2010-01-01

Ultrafast pulsed lasers find application in a range of spectroscopy and sensing techniques including laser induced breakdown spectroscopy (LIBS), coherent Raman spectroscopy, and terahertz (THz) spectroscopy. Whether based on absorption or emission processes, the characteristics of these techniques are heavily influenced by the use of ultrafast pulses in the signal generation process. Depending on the energy of the pulses used, the essential laser interaction process can primarily involve lattice vibrations, molecular rotations, or a combination of excited states produced by laser heating. While some of these techniques are currently confined to sensing at close ranges, others can be implemented for remote spectroscopic sensing owing principally to the laser pulse duration. We present a review of ultrafast laser-based spectroscopy techniques and discuss the use of these techniques to current and potential chemical and environmental sensing applications. PMID:22399883

Ultrafast Laser-Based Spectroscopy and Sensing: Applications in LIBS, CARS, and THz Spectroscopy

Directory of Open Access Journals (Sweden)

Megan R. Leahy-Hoppa

2010-04-01

Full Text Available Ultrafast pulsed lasers find application in a range of spectroscopy and sensing techniques including laser induced breakdown spectroscopy (LIBS, coherent Raman spectroscopy, and terahertz (THz spectroscopy. Whether based on absorption or emission processes, the characteristics of these techniques are heavily influenced by the use of ultrafast pulses in the signal generation process. Depending on the energy of the pulses used, the essential laser interaction process can primarily involve lattice vibrations, molecular rotations, or a combination of excited states produced by laser heating. While some of these techniques are currently confined to sensing at close ranges, others can be implemented for remote spectroscopic sensing owing principally to the laser pulse duration. We present a review of ultrafast laser-based spectroscopy techniques and discuss the use of these techniques to current and potential chemical and environmental sensing applications.

A PSF-shape-based beamforming strategy for robust 2D motion estimation in ultrafast data

NARCIS (Netherlands)

Saris, Anne E.C.M.; Fekkes, Stein; Nillesen, Maartje; Hansen, Hendrik H.G.; de Korte, Chris L.

2018-01-01

This paper presents a framework for motion estimation in ultrafast ultrasound data. It describes a novel approach for determining the sampling grid for ultrafast data based on the system's point-spread-function (PSF). As a consequence, the cross-correlation functions (CCF) used in the speckle

Silicon as a virtual plasmonic material: Acquisition of its transient optical constants and the ultrafast surface plasmon-polariton excitation

Energy Technology Data Exchange (ETDEWEB)

Danilov, P. A.; Ionin, A. A.; Kudryashov, S. I., E-mail: sikudr@sci.lebedev.ru; Makarov, S. V.; Rudenko, A. A. [Lebedev Physical Institute (Russian Federation); Saltuganov, P. N. [Moscow Institute of Physics and Technology (State University) (Russian Federation); Seleznev, L. V.; Yurovskikh, V. I.; Zayarny, D. A. [Lebedev Physical Institute (Russian Federation); Apostolova, T. [Bulgarian Academy of Sciences, Institute for Nuclear Research and Nuclear Energetics (Bulgaria)

2015-06-15

Ultrafast intense photoexcitation of a silicon surface is complementarily studied experimentally and theoretically, with its prompt optical dielectric function obtained by means of time-resolved optical reflection microscopy and the underlying electron-hole plasma dynamics modeled numerically, using a quantum kinetic approach. The corresponding transient surface plasmon-polariton (SPP) dispersion curves of the photo-excited material were simulated as a function of the electron-hole plasma density, using the derived optical dielectric function model, and directly mapped at several laser photon energies, measuring spatial periods of the corresponding SPP-mediated surface relief nanogratings. The unusual spectral dynamics of the surface plasmon resonance, initially increasing with the increase in the electron-hole plasma density but damped at high interband absorption losses induced by the high-density electron-hole plasma through instantaneous bandgap renormalization, was envisioned through the multi-color mapping.

Design of air blast pressure sensors based on miniature silicon membrane and piezoresistive gauges

Science.gov (United States)

Riondet, J.; Coustou, A.; Aubert, H.; Pons, P.; Lavayssière, M.; Luc, J.; Lefrançois, A.

2017-11-01

Available commercial piezoelectric pressure sensors are not able to accurately reproduce the ultra-fast transient pressure occurring during an air blast experiment. In this communication a new pressure sensor prototype based on a miniature silicon membrane and piezoresistive gauges is reported for significantly improving the performances in terms of time response. Simulation results demonstrate the feasibility of a pressure transducer having a fundamental resonant frequency almost ten times greater than the commercial piezoelectric sensors one. The sensor uses a 5μm-thick SOI membrane and four P-type silicon gauges (doping level ≅ 1019 at/cm3) in Wheatstone bridge configuration. To obtain a good trade-off between the fundamental mechanical resonant frequency and pressure sensitivity values, the typical dimension of the rectangular membrane is fixed to 30μm x 90μm with gauge dimension of 1μm x 5μm. The achieved simulated mechanical resonant frequency of these configuration is greater than 40MHz with a sensitivity of 0.04% per bar.

4D tracking with ultra-fast silicon detectors

Science.gov (United States)

F-W Sadrozinski, Hartmut; Seiden, Abraham; Cartiglia, Nicolò

2018-02-01

The evolution of particle detectors has always pushed the technological limit in order to provide enabling technologies to researchers in all fields of science. One archetypal example is the evolution of silicon detectors, from a system with a few channels 30 years ago, to the tens of millions of independent pixels currently used to track charged particles in all major particle physics experiments. Nowadays, silicon detectors are ubiquitous not only in research laboratories but in almost every high-tech apparatus, from portable phones to hospitals. In this contribution, we present a new direction in the evolution of silicon detectors for charge particle tracking, namely the inclusion of very accurate timing information. This enhancement of the present silicon detector paradigm is enabled by the inclusion of controlled low gain in the detector response, therefore increasing the detector output signal sufficiently to make timing measurement possible. After providing a short overview of the advantage of this new technology, we present the necessary conditions that need to be met for both sensor and readout electronics in order to achieve 4D tracking. In the last section, we present the experimental results, demonstrating the validity of our research path.

Application of hydrogen-plasma technology for property modification of silicon and producing the silicon-based structures

International Nuclear Information System (INIS)

Fedotov, A.K.; Mazanik, A.V.; Ul'yashin, A.G.; Dzhob, R; Farner, V.R.

2000-01-01

Effects of atomic hydrogen on the properties of Czochralski-grown single crystal silicon as well as polycrystalline shaped silicon have been investigated. It was established that the buried defect layers created by high-energy hydrogen or helium ion implantation act as a good getter centers for hydrogen atoms introduced in silicon in the process of hydrogen plasma hydrogenation. Atomic hydrogen was shown to be active as a catalyzer significantly enhancing the rate of thermal donors formation in p-type single crystal silicon. This effect can be used for n-p- and p-n-p-silicon based device structures producing [ru

All-optically tunable waveform synthesis by a silicon nanowaveguide ring resonator coupled with a photonic-crystal fiber frequency shifter

KAUST Repository

Savvin, Aleksandr D.

2011-03-01

A silicon nanowaveguide ring resonator is combined with a photonic-crystal fiber (PCF) frequency shifter to demonstrate an all-optically tunable synthesis of ultrashort pulse trains, modulated by ultrafast photoinduced free-carrier generation in the silicon resonator. Pump-probe measurements performed with a 50-fs, 625-nm second-harmonic output of a Cr:forsterite laser, used as a carrier-injecting pump, and a 1.50-1.56-μm frequency-tunable 100-fs soliton output of a photonic-crystal fiber, serving as a probe, resolve tunable ultrafast oscillatory features in the silicon nanowaveguide resonator response. © 2010 Elsevier B.V. All rights reserved.

All-optically tunable waveform synthesis by a silicon nanowaveguide ring resonator coupled with a photonic-crystal fiber frequency shifter

KAUST Repository

Savvin, Aleksandr D.; Melnikov, Vasily; Fedotov, Il'ya V.; Fedotov, Andrei B.; Perova, Tatiana S.; Zheltikov, Aleksei M.

2011-01-01

A silicon nanowaveguide ring resonator is combined with a photonic-crystal fiber (PCF) frequency shifter to demonstrate an all-optically tunable synthesis of ultrashort pulse trains, modulated by ultrafast photoinduced free-carrier generation in the silicon resonator. Pump-probe measurements performed with a 50-fs, 625-nm second-harmonic output of a Cr:forsterite laser, used as a carrier-injecting pump, and a 1.50-1.56-μm frequency-tunable 100-fs soliton output of a photonic-crystal fiber, serving as a probe, resolve tunable ultrafast oscillatory features in the silicon nanowaveguide resonator response. © 2010 Elsevier B.V. All rights reserved.

All-Optical Signal Processing using Silicon Devices

DEFF Research Database (Denmark)

Oxenløwe, Leif Katsuo; Pu, Minhao; Ding, Yunhong

2014-01-01

This paper presents an overview of recent wo rk on the use of silicon waveguides for processing optical data signals. We will describe ultra-fast, ultra-broadband, polarisation-insensitive and phase-sensitive applications including processing of spectrally-efficient data formats and optical phase...

Ultrafast optical ranging using microresonator soliton frequency combs

Science.gov (United States)

Trocha, P.; Karpov, M.; Ganin, D.; Pfeiffer, M. H. P.; Kordts, A.; Wolf, S.; Krockenberger, J.; Marin-Palomo, P.; Weimann, C.; Randel, S.; Freude, W.; Kippenberg, T. J.; Koos, C.

2018-02-01

Light detection and ranging is widely used in science and industry. Over the past decade, optical frequency combs were shown to offer advantages in optical ranging, enabling fast distance acquisition with high accuracy. Driven by emerging high-volume applications such as industrial sensing, drone navigation, or autonomous driving, there is now a growing demand for compact ranging systems. Here, we show that soliton Kerr comb generation in integrated silicon nitride microresonators provides a route to high-performance chip-scale ranging systems. We demonstrate dual-comb distance measurements with Allan deviations down to 12 nanometers at averaging times of 13 microseconds along with ultrafast ranging at acquisition rates of 100 megahertz, allowing for in-flight sampling of gun projectiles moving at 150 meters per second. Combining integrated soliton-comb ranging systems with chip-scale nanophotonic phased arrays could enable compact ultrafast ranging systems for emerging mass applications.

Ultrafast Science Opportunities with Electron Microscopy

Energy Technology Data Exchange (ETDEWEB)

DURR, HERMANN; Wang, X.J., ed.

2016-04-28

X-rays and electrons are two of the most fundamental probes of matter. When the Linac Coherent Light Source (LCLS), the world’s first x-ray free electron laser, began operation in 2009, it transformed ultrafast science with the ability to generate laser-like x-ray pulses from the manipulation of relativistic electron beams. This document describes a similar future transformation. In Transmission Electron Microscopy, ultrafast relativistic (MeV energy) electron pulses can achieve unsurpassed spatial and temporal resolution. Ultrafast temporal resolution will be the next frontier in electron microscopy and can ideally complement ultrafast x-ray science done with free electron lasers. This document describes the Grand Challenge science opportunities in chemistry, material science, physics and biology that arise from an MeV ultrafast electron diffraction & microscopy facility, especially when coupled with linac-based intense THz and X-ray pump capabilities.

Ultra-fast secure communication with complex systems in classical channels (Conference Presentation)

KAUST Repository

Mazzone, Valerio

2017-04-28

Developing secure communications is a research area of growing interest. During the past years, several cryptographic schemes have been developed, with Quantum cryptography being a promising scheme due to the use of quantum effects, which make very difficult for an eavesdropper to intercept the communication. However, practical quantum key distribution methods have encountered several limitations; current experimental realizations, in fact, fail to scale up on long distances, as well as in providing unconditional security and speed comparable to classical optical communications channels. Here we propose a new, low cost and ultra-fast cryptographic system based on a fully classical optical channel. Our cryptographic scheme exploits the complex synchronization of two different random systems (one on the side of the sender and another on the side of the receiver) to realize a “physical” one paid system. The random medium is created by an optical chip fabricated through electron beam lithography on a Silicon On Insulator (SOI) substrate. We present experiments with ps lasers and commercial fibers, showing the ultrafast distribution of a random key between two users (Alice and Bob), with absolute no possibility for a passive/active eavesdropper to intercept the communication. Remarkably, this system enables the same security of quantum cryptography, but with the use of a classical communication channel. Our system exploits a unique synchronization that exists between two different random systems, and at such is extremely versatile and can enable safe communications among different users in standards telecommunications channels.

A US Based Ultrafast Interdisciplinary Research Facility

Science.gov (United States)

Gueye, Paul; Hill, Wendell; Johnson, Anthony

2006-10-01

The US scientific competitiveness on the world arena has substantially decreased due to the lack of funding and training of qualified personnel. Most of the potential workforce found in higher education is composed of foreign students and post-docs. In the specific field of low- and high-field science, the European and Asian communities are rapidly catching-up with the US, even leading in some areas. To remain the leader in ultrafast science and technology, new visions and commitment must be embraced. For that reason, an international effort of more than 70 countries for a US-based interdisciplinary research facility using ultrafast laser technology is under development. It will provide research and educational training, as well as new venues for a strong collaboration between the fields of astrophysics, nuclear/high energy physics, plasma physics, optical sciences, biological and medical physics. This facility will consist of a uniquely designed high contrast multi-lines concept housing twenty experimental rooms shared between four beams:[0.1 TW, 1 kHz], [10 TW, 9 kHz], [100-200 TW, 10 Hz] and [500 TW, 10 Hz]. The detail schematic of this multi-laser system, foreseen research and educational programs, and organizational structure of this facility will be presented.

High-Q silicon-on-insulator slot photonic crystal cavity infiltrated by a liquid

International Nuclear Information System (INIS)

Caër, Charles; Le Roux, Xavier; Cassan, Eric

2013-01-01

We report the experimental realization of a high-Q slot photonic crystal cavity in Silicon-On-Insulator (SOI) configuration infiltrated by a liquid. Loaded Q-factor of 23 000 is measured at telecom wavelength. The intrinsic quality factor inferred from the transmission spectrum is higher than 200 000, which represents a record value for slot photonic crystal cavities on SOI, whereas the maximum of intensity of the cavity is roughly equal to 20% of the light transmitted in the waveguide. This result makes filled slot photonic crystal cavities very promising for silicon-based light emission and ultrafast nonlinear optics

Electrical activation of phosphorus in silicon

International Nuclear Information System (INIS)

Goh, K.E.J.; Oberbeck, L.; Simmons, M.Y.; Clark, R.G.

2003-01-01

Full text: We present studies of phosphorus δ-doping in silicon with a view to determining the degree of electrical activation of the dopants. These results have a direct consequence for the use of phosphorus as a qubit in a silicon-based quantum computer such as that proposed by Kane. Room temperature and 4 K Hall effect measurements are presented for phosphorus δ-doped layers grown in n-type silicon using two different methods. In the first method, the δ-layer was deposited by a phosphorus effusion cell in an MBE chamber. In the second method, the Si surface was dosed with phosphine gas and then annealed to 550 deg C to incorporate P into the substrate. In both methods, the P δ-doped layer was subsequently encapsulated by ∼25 nm of Si grown epitaxially. We discuss the implications of our results on the fabrication of the Kane quantum computer

Beating Darwin-Bragg losses in lab-based ultrafast x-ray experiments

Directory of Open Access Journals (Sweden)

Wilfred K. Fullagar

2017-07-01

Full Text Available The use of low temperature thermal detectors for avoiding Darwin-Bragg losses in lab-based ultrafast experiments has begun. An outline of the background of this new development is offered, showing the relevant history and initiative taken by this work.

Ultrafast MR Imaging in Pediatric Neuroradiology

International Nuclear Information System (INIS)

Singh, R.K.; Smith, J.T.; Wilkinson, I.D.; Griffiths, P.D.

2003-01-01

Purpose: To compare the diagnostic information obtained from ultrafast MR imaging with standard MR imaging techniques in pediatric neuroradiology. The goal was to judge whether ultrafast methods can be used to replace standard methods and reduce the need for sedation or general anesthesia as a result of the considerably shorter scan times. Material and Methods: Our prospective study involved 125 patients. Routine clinical imaging was performed along with two ultrafast methods. Single shot fast spin echo (SSFSE) was used to give T2-weighted images and an echo planar imaging (EPI) sequence to provide a T1-weighted images. The ultrafast images were presented to an experienced neuro radiologist who was also given the information present on the initial referral card. These reports based on the ultrafast images were then compared with the formal radiologic report made solely on the basis of the standard imaging. Results: The overall sensitivity and specificity for ultrafast imaging when compared to the reference standard were 78% and 98% with positive and negative predictive values of 98% and 76%. Pathologies characterized by small areas of subtle T2 prolongation were difficult or impossible to see on the ultrafast images but otherwise they provided reliable information. Conclusions: This paper demonstrates that ultrafast MR imaging can diagnose many pediatric intracranial abnormalities as well as standard methods. Anatomic resolution limits its capacity to define subtle developmental anomalies and contrast resolution limitations of the ultrafast methods reduce the detection of pathology characterized by subtle T2 prolongation

"Ultra"-Fast Fracture Strength of Advanced Structural Ceramic Materials Studied at Elevated Temperatures

Science.gov (United States)

Choi, Sung R.; Gyekenyesi, John P.

1999-01-01

The accurate determination of inert strength is important in reliable life prediction of structural ceramic components. At ambient temperature, the inert strength of a brittle material is typically regarded as free of the effects of slow crack growth due to stress corrosion. Therefore, the inert strength can be determined either by eliminating active species, especially moisture, with an appropriate inert medium, or by using a very high test rate. However, at elevated temperatures, the concept or definition of the inert strength of brittle ceramic materials is not clear, since temperature itself is a degrading environment, resulting in strength degradation through slow crack growth and/or creep. Since the mechanism to control strength is rate-dependent viscous flow, the only conceivable way to determine the inert strength at elevated temperatures is to utilize a very fast test rate that either minimizes the time for or eliminates slow crack growth. Few experimental studies have measured the elevated-temperature, inert (or "ultra"-fast fracture) strength of advanced ceramics. At the NASA Lewis Research Center, an experimental study was initiated to better understand the "ultra"-fast fracture strength behavior of advanced ceramics at elevated temperatures. Fourteen advanced ceramics - one alumina, eleven silicon nitrides, and two silicon carbides - have been tested using constant stress-rate (dynamic fatigue) testing in flexure with a series of stress rates including the "ultra"-fast stress rate of 33 000 MPa/sec with digitally controlled test frames. The results for these 14 advanced ceramics indicate that, notwithstanding possible changes in flaw populations as well as flaw configurations because of elevated temperatures, the strength at 33 000 MPa/sec approached the room-temperature strength or reached a higher value than that determined at the conventional test rate of 30 MPa/sec. On the basis of the experimental data, it can be stated that the elevated

Silicon nanowire based high brightness, pulsed relativistic electron source

Directory of Open Access Journals (Sweden)

Deep Sarkar

2017-06-01

Full Text Available We demonstrate that silicon nanowire arrays efficiently emit relativistic electron pulses under irradiation by a high-intensity, femtosecond, and near-infrared laser (∼1018 W/cm2, 25 fs, 800 nm. The nanowire array yields fluxes and charge per bunch that are 40 times higher than those emitted by an optically flat surface, in the energy range of 0.2–0.5 MeV. The flux and charge yields for the nanowires are observed to be directional in nature unlike that for planar silicon. Particle-in-cell simulations establish that such large emission is caused by the enhancement of the local electric fields around a nanowire, which consequently leads to an enhanced absorption of laser energy. We show that the high-intensity contrast (ratio of picosecond pedestal to femtosecond peak of the laser pulse (10−9 is crucial to this large yield. We extend the notion of surface local-field enhancement, normally invoked in low-order nonlinear optical processes like second harmonic generation, optical limiting, etc., to ultrahigh laser intensities. These electron pulses, expectedly femtosecond in duration, have potential application in imaging, material modification, ultrafast dynamics, terahertz generation, and fast ion sources.

Tunable, antibacterial activity of silicone polyether surfactants.

Science.gov (United States)

Khan, Madiha F; Zepeda-Velazquez, Laura; Brook, Michael A

2015-08-01

Silicone surfactants are used in a variety of applications, however, limited data is available on the relationship between surfactant structure and biological activity. A series of seven nonionic, silicone polyether surfactants with known structures was tested for in vitro antibacterial activity against Escherichia coli BL21. The compounds varied in their hydrophobic head, comprised of branched silicone structures with 3-10 siloxane linkages and, in two cases, phenyl substitution, and hydrophilic tail of 8-44 poly(ethylene glycol) units. The surfactants were tested at three concentrations: below, at, and above their Critical Micelle Concentrations (CMC) against 5 concentrations of E. coli BL21 in a three-step assay comprised of a 14-24h turbidometric screen, a live-dead stain and viable colony counts. The bacterial concentration had little effect on antibacterial activity. For most of the surfactants, antibacterial activity was higher at concentrations above the CMC. Surfactants with smaller silicone head groups had as much as 4 times the bioactivity of surfactants with larger groups, with the smallest hydrophobe exhibiting potency equivalent to sodium dodecyl sulfate (SDS). Smaller PEG chains were similarly associated with higher potency. These data link lower micelle stability and enhanced permeability of smaller silicone head groups to antibacterial activity. The results demonstrate that simple manipulation of nonionic silicone polyether structure leads to significant changes in antibacterial activity. Copyright © 2015 Elsevier B.V. All rights reserved.

Tracking Ultrafast Carrier Dynamics in Single Semiconductor Nanowire Heterostructures

Directory of Open Access Journals (Sweden)

Taylor A.J.

2013-03-01

Full Text Available An understanding of non-equilibrium carrier dynamics in silicon (Si nanowires (NWs and NW heterostructures is very important due to their many nanophotonic and nanoelectronics applications. Here, we describe the first measurements of ultrafast carrier dynamics and diffusion in single heterostructured Si nanowires, obtained using ultrafast optical microscopy. By isolating individual nanowires, we avoid complications resulting from the broad size and alignment distribution in nanowire ensembles, allowing us to directly probe ultrafast carrier dynamics in these quasi-one-dimensional systems. Spatially-resolved pump-probe spectroscopy demonstrates the influence of surface-mediated mechanisms on carrier dynamics in a single NW, while polarization-resolved femtosecond pump-probe spectroscopy reveals a clear anisotropy in carrier lifetimes measured parallel and perpendicular to the NW axis, due to density-dependent Auger recombination. Furthermore, separating the pump and probe spots along the NW axis enabled us to track space and time dependent carrier diffusion in radial and axial NW heterostructures. These results enable us to reveal the influence of radial and axial interfaces on carrier dynamics and charge transport in these quasi-one-dimensional nanosystems, which can then be used to tailor carrier relaxation in a single nanowire heterostructure for a given application.

Ultrafast terahertz control of extreme tunnel currents through single atoms on a silicon surface

DEFF Research Database (Denmark)

Jelic, Vedran; Iwaszczuk, Krzysztof; Nguyen, Peter H.

2017-01-01

scanning tunnelling microscopy (THz-STM) in ultrahigh vacuum as a new platform for exploring ultrafast non-equilibrium tunnelling dynamics with atomic precision. Extreme terahertz-pulse-driven tunnel currents up to 10(7) times larger than steady-state currents in conventional STM are used to image...... terahertz-induced band bending and non-equilibrium charging of surface states opens new conduction pathways to the bulk, enabling extreme transient tunnel currents to flow between the tip and sample.......Ultrafast control of current on the atomic scale is essential for future innovations in nanoelectronics. Extremely localized transient electric fields on the nanoscale can be achieved by coupling picosecond duration terahertz pulses to metallic nanostructures. Here, we demonstrate terahertz...

Amorphous silicon-based microchannel plates

International Nuclear Information System (INIS)

Franco, Andrea; Riesen, Yannick; Wyrsch, Nicolas; Dunand, Sylvain; Powolny, François; Jarron, Pierre; Ballif, Christophe

2012-01-01

Microchannel plates (MCP) based on hydrogenated amorphous silicon (a-Si:H) were recently introduced to overcome some of the limitations of crystalline silicon and glass MCP. The typical thickness of a-Si:H based MCPs (AMCP) ranges between 80 and 100 μm and the micromachining of the channels is realized by deep reactive ion etching (DRIE). Advantages and issues regarding the fabrication process are presented and discussed. Electron amplification is demonstrated and analyzed using Electron Beam Induced Current (EBIC) technique. The gain increases as a function of the bias voltage, limited to −340 V on account of high leakage currents across the structure. EBIC maps on 10° tilted samples confirm that the device active area extend to the entire channel opening. AMCP characterization with the electron beam shows gain saturation and signal quenching which depends on the effectiveness of the charge replenishment in the channel walls.

A PSF-Shape-Based Beamforming Strategy for Robust 2D Motion Estimation in Ultrafast Data

OpenAIRE

Anne E. C. M. Saris; Stein Fekkes; Maartje M. Nillesen; Hendrik H. G. Hansen; Chris L. de Korte

2018-01-01

This paper presents a framework for motion estimation in ultrafast ultrasound data. It describes a novel approach for determining the sampling grid for ultrafast data based on the system’s point-spread-function (PSF). As a consequence, the cross-correlation functions (CCF) used in the speckle tracking (ST) algorithm will have circular-shaped peaks, which can be interpolated using a 2D interpolation method to estimate subsample displacements. Carotid artery wall motion and parabolic blood flow...

Ultra-Fast Optical Signal Processing in Nonlinear Silicon Waveguides

DEFF Research Database (Denmark)

Oxenløwe, Leif Katsuo; Galili, Michael; Pu, Minhao

2011-01-01

We describe recent demonstrations of exploiting highly nonlinear silicon nanowires for processing Tbit/s optical data signals. We perform demultiplexing and optical waveform sampling of 1.28 Tbit/s and wavelength conversion of 640 Gbit/s data signals.......We describe recent demonstrations of exploiting highly nonlinear silicon nanowires for processing Tbit/s optical data signals. We perform demultiplexing and optical waveform sampling of 1.28 Tbit/s and wavelength conversion of 640 Gbit/s data signals....

Ultrafast Outflows: Galaxy-scale Active Galactic Nucleus Feedback

Science.gov (United States)

Wagner, A. Y.; Umemura, M.; Bicknell, G. V.

2013-01-01

We show, using global three-dimensional grid-based hydrodynamical simulations, that ultrafast outflows (UFOs) from active galactic nuclei (AGNs) result in considerable feedback of energy and momentum into the interstellar medium (ISM) of the host galaxy. The AGN wind interacts strongly with the inhomogeneous, two-phase ISM consisting of dense clouds embedded in a tenuous, hot, hydrostatic medium. The outflow floods through the intercloud channels, sweeps up the hot ISM, and ablates and disperses the dense clouds. The momentum of the UFO is primarily transferred to the dense clouds via the ram pressure in the channel flow, and the wind-blown bubble evolves in the energy-driven regime. Any dependence on UFO opening angle disappears after the first interaction with obstructing clouds. On kpc scales, therefore, feedback by UFOs operates similarly to feedback by relativistic AGN jets. Negative feedback is significantly stronger if clouds are distributed spherically rather than in a disk. In the latter case, the turbulent backflow of the wind drives mass inflow toward the central black hole. Considering the common occurrence of UFOs in AGNs, they are likely to be important in the cosmological feedback cycles of galaxy formation.

ULTRAFAST OUTFLOWS: GALAXY-SCALE ACTIVE GALACTIC NUCLEUS FEEDBACK

Energy Technology Data Exchange (ETDEWEB)

Wagner, A. Y.; Umemura, M. [Center for Computational Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, 305-8577 (Japan); Bicknell, G. V., E-mail: ayw@ccs.tsukuba.ac.jp [Research School of Astronomy and Astrophysics, Australian National University, ACT 2611 (Australia)

2013-01-20

We show, using global three-dimensional grid-based hydrodynamical simulations, that ultrafast outflows (UFOs) from active galactic nuclei (AGNs) result in considerable feedback of energy and momentum into the interstellar medium (ISM) of the host galaxy. The AGN wind interacts strongly with the inhomogeneous, two-phase ISM consisting of dense clouds embedded in a tenuous, hot, hydrostatic medium. The outflow floods through the intercloud channels, sweeps up the hot ISM, and ablates and disperses the dense clouds. The momentum of the UFO is primarily transferred to the dense clouds via the ram pressure in the channel flow, and the wind-blown bubble evolves in the energy-driven regime. Any dependence on UFO opening angle disappears after the first interaction with obstructing clouds. On kpc scales, therefore, feedback by UFOs operates similarly to feedback by relativistic AGN jets. Negative feedback is significantly stronger if clouds are distributed spherically rather than in a disk. In the latter case, the turbulent backflow of the wind drives mass inflow toward the central black hole. Considering the common occurrence of UFOs in AGNs, they are likely to be important in the cosmological feedback cycles of galaxy formation.

ULTRAFAST OUTFLOWS: GALAXY-SCALE ACTIVE GALACTIC NUCLEUS FEEDBACK

International Nuclear Information System (INIS)

Wagner, A. Y.; Umemura, M.; Bicknell, G. V.

2013-01-01

We show, using global three-dimensional grid-based hydrodynamical simulations, that ultrafast outflows (UFOs) from active galactic nuclei (AGNs) result in considerable feedback of energy and momentum into the interstellar medium (ISM) of the host galaxy. The AGN wind interacts strongly with the inhomogeneous, two-phase ISM consisting of dense clouds embedded in a tenuous, hot, hydrostatic medium. The outflow floods through the intercloud channels, sweeps up the hot ISM, and ablates and disperses the dense clouds. The momentum of the UFO is primarily transferred to the dense clouds via the ram pressure in the channel flow, and the wind-blown bubble evolves in the energy-driven regime. Any dependence on UFO opening angle disappears after the first interaction with obstructing clouds. On kpc scales, therefore, feedback by UFOs operates similarly to feedback by relativistic AGN jets. Negative feedback is significantly stronger if clouds are distributed spherically rather than in a disk. In the latter case, the turbulent backflow of the wind drives mass inflow toward the central black hole. Considering the common occurrence of UFOs in AGNs, they are likely to be important in the cosmological feedback cycles of galaxy formation.

Neuromorphic photonic networks using silicon photonic weight banks.

Science.gov (United States)

Tait, Alexander N; de Lima, Thomas Ferreira; Zhou, Ellen; Wu, Allie X; Nahmias, Mitchell A; Shastri, Bhavin J; Prucnal, Paul R

2017-08-07

Photonic systems for high-performance information processing have attracted renewed interest. Neuromorphic silicon photonics has the potential to integrate processing functions that vastly exceed the capabilities of electronics. We report first observations of a recurrent silicon photonic neural network, in which connections are configured by microring weight banks. A mathematical isomorphism between the silicon photonic circuit and a continuous neural network model is demonstrated through dynamical bifurcation analysis. Exploiting this isomorphism, a simulated 24-node silicon photonic neural network is programmed using "neural compiler" to solve a differential system emulation task. A 294-fold acceleration against a conventional benchmark is predicted. We also propose and derive power consumption analysis for modulator-class neurons that, as opposed to laser-class neurons, are compatible with silicon photonic platforms. At increased scale, Neuromorphic silicon photonics could access new regimes of ultrafast information processing for radio, control, and scientific computing.

Revised activation estimates for silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Heinisch, H.L. [Pacific Northwest National Lab., Richland, WA (United States); Cheng, E.T.; Mann, F.M.

1996-10-01

Recent progress in nuclear data development for fusion energy systems includes a reevaluation of neutron activation cross sections for silicon and aluminum. Activation calculations using the newly compiled Fusion Evaluated Nuclear Data Library result in calculated levels of {sup 26}Al in irradiated silicon that are about an order of magnitude lower than the earlier calculated values. Thus, according to the latest internationally accepted nuclear data, SiC is much more attractive as a low activation material, even in first wall applications.

Anapole nanolasers for mode-locking and ultrafast pulse generation

KAUST Repository

Gongora, J. S. Totero; Miroshnichenko, Andrey E.; Kivshar, Yuri S.; Fratalocchi, Andrea

2017-01-01

Nanophotonics is a rapidly developing field of research with many suggestions for a design of nanoantennas, sensors and miniature metadevices. Despite many proposals for passive nanophotonic devices, the efficient coupling of light to nanoscale optical structures remains a major challenge. In this article, we propose a nanoscale laser based on a tightly confined anapole mode. By harnessing the non-radiating nature of the anapole state, we show how to engineer nanolasers based on InGaAs nanodisks as on-chip sources with unique optical properties. Leveraging on the near-field character of anapole modes, we demonstrate a spontaneously polarized nanolaser able to couple light into waveguide channels with four orders of magnitude intensity than classical nanolasers, as well as the generation of ultrafast (of 100 fs) pulses via spontaneous mode locking of several anapoles. Anapole nanolasers offer an attractive platform for monolithically integrated, silicon photonics sources for advanced and efficient nanoscale circuitry.

Anapole nanolasers for mode-locking and ultrafast pulse generation

KAUST Repository

Gongora, J. S. Totero

2017-05-31

Nanophotonics is a rapidly developing field of research with many suggestions for a design of nanoantennas, sensors and miniature metadevices. Despite many proposals for passive nanophotonic devices, the efficient coupling of light to nanoscale optical structures remains a major challenge. In this article, we propose a nanoscale laser based on a tightly confined anapole mode. By harnessing the non-radiating nature of the anapole state, we show how to engineer nanolasers based on InGaAs nanodisks as on-chip sources with unique optical properties. Leveraging on the near-field character of anapole modes, we demonstrate a spontaneously polarized nanolaser able to couple light into waveguide channels with four orders of magnitude intensity than classical nanolasers, as well as the generation of ultrafast (of 100 fs) pulses via spontaneous mode locking of several anapoles. Anapole nanolasers offer an attractive platform for monolithically integrated, silicon photonics sources for advanced and efficient nanoscale circuitry.

A theoretical approach to photosynthetically active radiation silicon sensor

International Nuclear Information System (INIS)

Tamasi, M.J.L.; Martínez Bogado, M.G.

2013-01-01

This paper presents a theoretical approach for the development of low cost radiometers to measure photosynthetically active radiation (PAR). Two alternatives are considered: a) glass optical filters attached to a silicon sensor, and b) dielectric coating on a silicon sensor. The devices proposed are based on radiometers previously developed by the Argentine National Atomic Energy Commission. The objective of this work is to adapt these low cost radiometers to construct reliable instruments for measuring PAR. The transmittance of optical filters and sensor response have been analyzed for different dielectric materials, number of layers deposited, and incidence angles. Uncertainties in thickness of layer deposition were evaluated. - Highlights: • Design of radiometers to measure photosynthetically active radiation • The study has used a filter and a Si sensor to modify spectral response. • Dielectric multilayers on glass and silicon sensor • Spectral response related to different incidence angles, materials and spectra

Brain inspired high performance electronics on flexible silicon

KAUST Repository

Sevilla, Galo T.

2014-06-01

Brain\\'s stunning speed, energy efficiency and massive parallelism makes it the role model for upcoming high performance computation systems. Although human brain components are a million times slower than state of the art silicon industry components [1], they can perform 1016 operations per second while consuming less power than an electrical light bulb. In order to perform the same amount of computation with today\\'s most advanced computers, the output of an entire power station would be needed. In that sense, to obtain brain like computation, ultra-fast devices with ultra-low power consumption will have to be integrated in extremely reduced areas, achievable only if brain folded structure is mimicked. Therefore, to allow brain-inspired computation, flexible and transparent platform will be needed to achieve foldable structures and their integration on asymmetric surfaces. In this work, we show a new method to fabricate 3D and planar FET architectures in flexible and semitransparent silicon fabric without comprising performance and maintaining cost/yield advantage offered by silicon-based electronics.

WE-B-210-02: The Advent of Ultrafast Imaging in Biomedical Ultrasound

International Nuclear Information System (INIS)

Tanter, M.

2015-01-01

In the last fifteen years, the introduction of plane or diverging wave transmissions rather than line by line scanning focused beams has broken the conventional barriers of ultrasound imaging. By using such large field of view transmissions, the frame rate reaches the theoretical limit of physics dictated by the ultrasound speed and an ultrasonic map can be provided typically in tens of micro-seconds (several thousands of frames per second). Interestingly, this leap in frame rate is not only a technological breakthrough but it permits the advent of completely new ultrasound imaging modes, including shear wave elastography, electromechanical wave imaging, ultrafast doppler, ultrafast contrast imaging, and even functional ultrasound imaging of brain activity (fUltrasound) introducing Ultrasound as an emerging full-fledged neuroimaging modality. At ultrafast frame rates, it becomes possible to track in real time the transient vibrations – known as shear waves – propagating through organs. Such “human body seismology” provides quantitative maps of local tissue stiffness whose added value for diagnosis has been recently demonstrated in many fields of radiology (breast, prostate and liver cancer, cardiovascular imaging, …). Today, Supersonic Imagine company is commercializing the first clinical ultrafast ultrasound scanner, Aixplorer with real time Shear Wave Elastography. This is the first example of an ultrafast Ultrasound approach surpassing the research phase and now widely spread in the clinical medical ultrasound community with an installed base of more than 1000 Aixplorer systems in 54 countries worldwide. For blood flow imaging, ultrafast Doppler permits high-precision characterization of complex vascular and cardiac flows. It also gives ultrasound the ability to detect very subtle blood flow in very small vessels. In the brain, such ultrasensitive Doppler paves the way for fUltrasound (functional ultrasound imaging) of brain activity with unprecedented

WE-B-210-02: The Advent of Ultrafast Imaging in Biomedical Ultrasound

Energy Technology Data Exchange (ETDEWEB)

Tanter, M. [Laboratoire Ondes et Acoustique (France)

2015-06-15

In the last fifteen years, the introduction of plane or diverging wave transmissions rather than line by line scanning focused beams has broken the conventional barriers of ultrasound imaging. By using such large field of view transmissions, the frame rate reaches the theoretical limit of physics dictated by the ultrasound speed and an ultrasonic map can be provided typically in tens of micro-seconds (several thousands of frames per second). Interestingly, this leap in frame rate is not only a technological breakthrough but it permits the advent of completely new ultrasound imaging modes, including shear wave elastography, electromechanical wave imaging, ultrafast doppler, ultrafast contrast imaging, and even functional ultrasound imaging of brain activity (fUltrasound) introducing Ultrasound as an emerging full-fledged neuroimaging modality. At ultrafast frame rates, it becomes possible to track in real time the transient vibrations – known as shear waves – propagating through organs. Such “human body seismology” provides quantitative maps of local tissue stiffness whose added value for diagnosis has been recently demonstrated in many fields of radiology (breast, prostate and liver cancer, cardiovascular imaging, …). Today, Supersonic Imagine company is commercializing the first clinical ultrafast ultrasound scanner, Aixplorer with real time Shear Wave Elastography. This is the first example of an ultrafast Ultrasound approach surpassing the research phase and now widely spread in the clinical medical ultrasound community with an installed base of more than 1000 Aixplorer systems in 54 countries worldwide. For blood flow imaging, ultrafast Doppler permits high-precision characterization of complex vascular and cardiac flows. It also gives ultrasound the ability to detect very subtle blood flow in very small vessels. In the brain, such ultrasensitive Doppler paves the way for fUltrasound (functional ultrasound imaging) of brain activity with unprecedented

Combined passive detection and ultrafast active imaging of cavitation events induced by short pulses of high-intensity ultrasound.

Science.gov (United States)

Gateau, Jérôme; Aubry, Jean-François; Pernot, Mathieu; Fink, Mathias; Tanter, Mickaël

2011-03-01

The activation of natural gas nuclei to induce larger bubbles is possible using short ultrasonic excitations of high amplitude, and is required for ultrasound cavitation therapies. However, little is known about the distribution of nuclei in tissues. Therefore, the acoustic pressure level necessary to generate bubbles in a targeted zone and their exact location are currently difficult to predict. To monitor the initiation of cavitation activity, a novel all-ultrasound technique sensitive to single nucleation events is presented here. It is based on combined passive detection and ultrafast active imaging over a large volume using the same multi-element probe. Bubble nucleation was induced using a focused transducer (660 kHz, f-number = 1) driven by a high-power electric burst (up to 300 W) of one to two cycles. Detection was performed with a linear array (4 to 7 MHz) aligned with the single-element focal point. In vitro experiments in gelatin gel and muscular tissue are presented. The synchronized passive detection enabled radio-frequency data to be recorded, comprising high-frequency coherent wave fronts as signatures of the acoustic emissions linked to the activation of the nuclei. Active change detection images were obtained by subtracting echoes collected in the unnucleated medium. These indicated the appearance of stable cavitating regions. Because of the ultrafast frame rate, active detection occurred as quickly as 330 μs after the high-amplitude excitation and the dynamics of the induced regions were studied individually.

Physical mechanisms of SiNx layer structuring with ultrafast lasers by direct and confined laser ablation

International Nuclear Information System (INIS)

Rapp, S.; Heinrich, G.; Wollgarten, M.; Huber, H. P.; Schmidt, M.

2015-01-01

In the production process of silicon microelectronic devices and high efficiency silicon solar cells, local contact openings in thin dielectric layers are required. Instead of photolithography, these openings can be selectively structured with ultra-short laser pulses by confined laser ablation in a fast and efficient lift off production step. Thereby, the ultrafast laser pulse is transmitted by the dielectric layer and absorbed at the substrate surface leading to a selective layer removal in the nanosecond time domain. Thermal damage in the substrate due to absorption is an unwanted side effect. The aim of this work is to obtain a deeper understanding of the physical laser-material interaction with the goal of finding a damage-free ablation mechanism. For this, thin silicon nitride (SiN x ) layers on planar silicon (Si) wafers are processed with infrared fs-laser pulses. Two ablation types can be distinguished: The known confined ablation at fluences below 300 mJ/cm 2 and a combined partial confined and partial direct ablation at higher fluences. The partial direct ablation process is caused by nonlinear absorption in the SiN x layer in the center of the applied Gaussian shaped laser pulses. Pump-probe investigations of the central area show ultra-fast reflectivity changes typical for direct laser ablation. Transmission electron microscopy results demonstrate that the Si surface under the remaining SiN x island is not damaged by the laser ablation process. At optimized process parameters, the method of direct laser ablation could be a good candidate for damage-free selective structuring of dielectric layers on absorbing substrates

Quantum modeling of ultrafast photoinduced charge separation

Science.gov (United States)

Rozzi, Carlo Andrea; Troiani, Filippo; Tavernelli, Ivano

2018-01-01

Phenomena involving electron transfer are ubiquitous in nature, photosynthesis and enzymes or protein activity being prominent examples. Their deep understanding thus represents a mandatory scientific goal. Moreover, controlling the separation of photogenerated charges is a crucial prerequisite in many applicative contexts, including quantum electronics, photo-electrochemical water splitting, photocatalytic dye degradation, and energy conversion. In particular, photoinduced charge separation is the pivotal step driving the storage of sun light into electrical or chemical energy. If properly mastered, these processes may also allow us to achieve a better command of information storage at the nanoscale, as required for the development of molecular electronics, optical switching, or quantum technologies, amongst others. In this Topical Review we survey recent progress in the understanding of ultrafast charge separation from photoexcited states. We report the state-of-the-art of the observation and theoretical description of charge separation phenomena in the ultrafast regime mainly focusing on molecular- and nano-sized solar energy conversion systems. In particular, we examine different proposed mechanisms driving ultrafast charge dynamics, with particular regard to the role of quantum coherence and electron-nuclear coupling, and link experimental observations to theoretical approaches based either on model Hamiltonians or on first principles simulations.

Protonation-induced ultrafast torsional dynamics in 9-anthrylbenzimidazole: a pH activated molecular rotor.

Science.gov (United States)

Nandi, Amitabha; Kushwaha, Archana; Das, Dipanwita; Ghosh, Rajib

2018-03-07

We report the photophysical properties and excited state dynamics of 9-anthrylbenzimidazole (ANBI) which exhibits protonation-induced molecular rotor properties. In contrast to the highly emissive behavior of neutral ANBI, protonation of the benzimidazole group of ANBI induces efficient nonradiative deactivation by ultrafast torsional motion around the bond connecting the anthracene and benzimidazole units, as revealed by ultrafast transient absorption and fluorescence spectroscopy. Contrary to viscosity-independent fluorescence of neutral dyes, protonated ANBI is shown to display linear variation of emission yield and lifetime with solvent viscosity. The protonation-induced molecular rotor properties in the studied system are shown to be driven by enhanced charge transfer and are corroborated by quantum chemical calculations. Potential application as a microviscosity sensor of acidic regions in a heterogeneous environment by these proton-activated molecular rotor properties of ANBI is discussed.

Silicon nanowire-based solar cells

Energy Technology Data Exchange (ETDEWEB)

Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, D-07745 Jena (Germany)], E-mail: thomas.stelzner@ipht-jena.de

2008-07-23

The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm{sup 2} open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm{sup -2} were obtained.

Silicon nanowire-based solar cells

International Nuclear Information System (INIS)

Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S

2008-01-01

The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm 2 open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm -2 were obtained

Responsivity Dependent Anodization Current Density of Nanoporous Silicon Based MSM Photodetector

Directory of Open Access Journals (Sweden)

Batool Eneaze B. Al-Jumaili

2016-01-01

Full Text Available Achieving a cheap and ultrafast metal-semiconductor-metal (MSM photodetector (PD for very high-speed communications is ever-demanding. We report the influence of anodization current density variation on the response of nanoporous silicon (NPSi based MSM PD with platinum (Pt contact electrodes. Such NPSi samples are grown from n-type Si (100 wafer using photoelectrochemical etching with three different anodization current densities. FESEM images of as-prepared samples revealed the existence of discrete pores with spherical and square-like shapes. XRD pattern displayed the growth of nanocrystals with (311 lattice orientation. The nanocrystallite sizes obtained using Scherrer formula are found to be between 20.8 nm and 28.6 nm. The observed rectifying behavior in the I-V characteristics is ascribed to the Pt/PSi/n-Si Schottky barrier formation, where the barrier height at the Pt/PSi interface is estimated to be 0.69 eV. Furthermore, this Pt/PSi/Pt MSM PD achieved maximum responsivity of 0.17 A/W and quantum efficiency as much as 39.3%. The photoresponse of this NPSi based MSM PD demonstrated excellent repeatability, fast response, and enhanced saturation current with increasing anodization current density.

Graphene as a transparent electrode for amorphous silicon-based solar cells

International Nuclear Information System (INIS)

Vaianella, F.; Rosolen, G.; Maes, B.

2015-01-01

The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles

Graphene as a transparent electrode for amorphous silicon-based solar cells

Science.gov (United States)

Vaianella, F.; Rosolen, G.; Maes, B.

2015-06-01

The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

Graphene as a transparent electrode for amorphous silicon-based solar cells

Energy Technology Data Exchange (ETDEWEB)

Vaianella, F., E-mail: Fabio.Vaianella@umons.ac.be; Rosolen, G.; Maes, B. [Micro- and Nanophotonic Materials Group, Faculty of Science, University of Mons, 20 place du Parc, B-7000 Mons (Belgium)

2015-06-28

The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

Fourteenth International Conference on Ultrafast Phenomena

CERN Document Server

Kobayashi, Takayoshi; Kobayashi, Tetsuro; Nelson, Keith A; Silvestri, Sandro; Ultrafast Phenomena XIV

2005-01-01

Ultrafast Phenomena XIV presents the latest advances in ultrafast science, including ultrafast laser and measurement technology as well as studies of ultrafast phenomena. Pico-, femto-, and atosecond processes relevant in physics, chemistry, biology and engineering are presented. Ultrafast technology is now having a profound impact within a wide range of applications, among them imaging, material diagnostics, and transformation and high-speed optoelectronics. This book summarizes results presented at the 14th Ultrafast Phenomena Conference and reviews the state of the art in this important and rapidly advancing field.

Sixteenth International Conference on Ultrafast Phenomena

CERN Document Server

Corkum, Paul; Nelson, Keith A; Riedle, Eberhard; Schoenlein, Robert W; Ultrafast Phenomena XVI

2009-01-01

Ultrafast Phenomena XVI presents the latest advances in ultrafast science, including both ultrafast optical technology and the study of ultrafast phenomena. It covers picosecond, femtosecond and attosecond processes relevant to applications in physics, chemistry, biology, and engineering. Ultrafast technology has a profound impact in a wide range of applications, amongst them biomedical imaging, chemical dynamics, frequency standards, material processing, and ultrahigh speed communications. This book summarizes the results presented at the 16th International Conference on Ultrafast Phenomena and provides an up-to-date view of this important and rapidly advancing field.

Experimental comparison of models for ultrafast impact ionization is silicon

DEFF Research Database (Denmark)

Tarekegne, Abebe Tilahun; Iwaszczuk, Krzysztof; Jepsen, Peter Uhd

2016-01-01

We compare experimentally the exponential and quadratic (Keldysh formula) impact ionization models using THz induced impact ionization in silicon. We demonstrate that the exponential model offers the best description of impact ionization process for ultrashort electric filed pulses.......We compare experimentally the exponential and quadratic (Keldysh formula) impact ionization models using THz induced impact ionization in silicon. We demonstrate that the exponential model offers the best description of impact ionization process for ultrashort electric filed pulses....

Amorphous silicon based particle detectors

OpenAIRE

Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

2012-01-01

Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

BSSF: a fingerprint based ultrafast binding site similarity search and function analysis server

Directory of Open Access Journals (Sweden)

Jiang Hualiang

2010-01-01

Full Text Available Abstract Background Genome sequencing and post-genomics projects such as structural genomics are extending the frontier of the study of sequence-structure-function relationship of genes and their products. Although many sequence/structure-based methods have been devised with the aim of deciphering this delicate relationship, there still remain large gaps in this fundamental problem, which continuously drives researchers to develop novel methods to extract relevant information from sequences and structures and to infer the functions of newly identified genes by genomics technology. Results Here we present an ultrafast method, named BSSF(Binding Site Similarity & Function, which enables researchers to conduct similarity searches in a comprehensive three-dimensional binding site database extracted from PDB structures. This method utilizes a fingerprint representation of the binding site and a validated statistical Z-score function scheme to judge the similarity between the query and database items, even if their similarities are only constrained in a sub-pocket. This fingerprint based similarity measurement was also validated on a known binding site dataset by comparing with geometric hashing, which is a standard 3D similarity method. The comparison clearly demonstrated the utility of this ultrafast method. After conducting the database searching, the hit list is further analyzed to provide basic statistical information about the occurrences of Gene Ontology terms and Enzyme Commission numbers, which may benefit researchers by helping them to design further experiments to study the query proteins. Conclusions This ultrafast web-based system will not only help researchers interested in drug design and structural genomics to identify similar binding sites, but also assist them by providing further analysis of hit list from database searching.

Radiation hard silicon particle detectors for HL-LHC—RD50 status report

Energy Technology Data Exchange (ETDEWEB)

Terzo, S., E-mail: Stefano.Terzo@mpp.mpg.de

2017-02-11

It is foreseen to significantly increase the luminosity of the LHC by upgrading towards the HL-LHC (High Luminosity LHC). The Phase-II-Upgrade scheduled for 2024 will mean unprecedented radiation levels, way beyond the limits of the silicon trackers currently employed. All-silicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silicon sensors to be employed on the innermost layers. Within the RD50 Collaboration, a massive R&D program is underway across experimental boundaries to develop silicon sensors with sufficient radiation tolerance. We will present results of several detector technologies and silicon materials at radiation levels corresponding to HL-LHC fluences. Based on these results, we will give recommendations for the silicon detectors to be used at the different radii of tracking systems in the LHC detector upgrades. In order to complement the measurements, we also perform detailed simulation studies of the sensors. - Highlights: • The RD50 collaboration investigates the radiation hardness of silicon sensors. • Different approaches to simulate the detector response after irradiation are shown. • HV-CMOS are cost-effective solution for the outer pixel layers at HL-LHC. • 3D and thin planar sensors with slim edges are solutions for innermost layers at HL-LHC. • Sensors with intrinsic gain are investigated to develop ultra-fast silicon detectors.

Hydrogen-terminated mesoporous silicon monoliths with huge surface area as alternative Si-based visible light-active photocatalysts

KAUST Repository

Li, Ting

2016-07-21

Silicon-based nanostructures and their related composites have drawn tremendous research interest in solar energy storage and conversion. Mesoporous silicon with a huge surface area of 400-900 m2 g-1 developed by electrochemical etching exhibits excellent photocatalytic ability and stability after 10 cycles in degrading methyl orange under visible light irradiation, owing to its unique mesoporous network, abundant surface hydrides and efficient light harvesting. This work showcases the profound effects of surface area, crystallinity, pore topology on charge migration/recombination and mass transportation. Therein the ordered 1D channel array has outperformed the interconnected 3D porous network by greatly accelerating the mass diffusion and enhancing the accessibility of the active sites on the extensive surfaces. © 2016 The Royal Society of Chemistry.

A PSF-Shape-Based Beamforming Strategy for Robust 2D Motion Estimation in Ultrafast Data

Directory of Open Access Journals (Sweden)

Anne E. C. M. Saris

2018-03-01

Full Text Available This paper presents a framework for motion estimation in ultrafast ultrasound data. It describes a novel approach for determining the sampling grid for ultrafast data based on the system’s point-spread-function (PSF. As a consequence, the cross-correlation functions (CCF used in the speckle tracking (ST algorithm will have circular-shaped peaks, which can be interpolated using a 2D interpolation method to estimate subsample displacements. Carotid artery wall motion and parabolic blood flow simulations together with rotating disk experiments using a Verasonics Vantage 256 are used for performance evaluation. Zero-degree plane wave data were acquired using an ATL L5-12 (fc = 9 MHz transducer for a range of pulse repetition frequencies (PRFs, resulting in 0–600 µm inter-frame displacements. The proposed methodology was compared to data beamformed on a conventionally spaced grid, combined with the commonly used 1D parabolic interpolation. The PSF-shape-based beamforming grid combined with 2D cubic interpolation showed the most accurate and stable performance with respect to the full range of inter-frame displacements, both for the assessment of blood flow and vessel wall dynamics. The proposed methodology can be used as a protocolled way to beamform ultrafast data and obtain accurate estimates of tissue motion.

Characterization of electrical and optical properties of silicon based materials

Energy Technology Data Exchange (ETDEWEB)

Jia, Guobin

2009-12-04

In this work, the electrical and luminescence properties of a series of silicon based materials used for photovoltaics, microelectronics and nanoelectronics have been investigated by means of electron beam induced current (EBIC), cathodoluminescence (CL), photoluminescence (PL) and electroluminescence (EL) methods. Photovoltaic materials produced by block casting have been investigated by EBIC on wafers sliced from different parts of the ingot. Various solar cell processings have been compared in parallel wafers by means of EBIC collection efficiency measurements and contrast-temperature C(T) behaviors of the extended defects, i. e. dislocations and grain boundaries (GBs). It was found that the solar cell processing with phosphorus diffusion gettering (PDG) followed with a SiN firing greatly reduces the recombination activity of extended defects at room temperature, and improves the bulk property simultaneously. A remaining activity of the dislocations indicates the limitation of the PDG at extended defects. Abnormal behavior of the dislocation activity after certain solar cell processes was also observed in the region with high dislocation density, the dislocations are activated after certain solar cell processings. In order to evaluate the properties of a thin polycrystalline silicon layer prepared by Al-induced layer exchange (Alile) technique, epitaxially layer grown on silicon substrate with different orientations was used as a model system to investigate the impact by the process temperature and the substrates. EBIC energy dependent collection efficiency measurements reveal an improvement of the epilayer quality with increasing substrate temperature during the growth from 450 C to 650 C, and a decrease of epilayer quality at 700 C. PL measurements on the epitaxially grown Si layer on silicon substrates revealed no characteristic dislocation-related luminescence (DRL) lines at room temperature and 77 K, while in the samples prepared by Alile process, intense

Ultrafast photoluminescence dynamics of blue-emitting silicon nanostructures

Czech Academy of Sciences Publication Activity Database

Žídek, K.; Trojánek, F.; Malý, P.; Pelant, Ivan; Gilliot, P.; Hönerlange, B.

2011-01-01

Roč. 8, č. 3 (2011), s. 979-984 ISSN 1862-6351 R&D Projects: GA AV ČR(CZ) IAA101120804; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : silicon * nanocrystals * time-resolved spectroscopy * luminescence * polarization * two-photon absorption Subject RIV: BM - Solid Matter Physics ; Magnetism http://onlinelibrary.wiley.com/doi/10.1002/pssc.201000394/abstract

Silicon based light-emitting materials and devices

International Nuclear Information System (INIS)

Chen Weide

1999-01-01

Silicon based light-emitting materials and devices are the key to optoelectronic integration. Recently, there has been significant progress in materials engineering methods. The author reviews the latest developments in this area including erbium doped silicon, porous silicon, nanocrystalline silicon and Si/SiO 2 superlattice structures. The incorporation of these different materials into devices is described and future device prospects are assessed

Accelerator-based single-shot ultrafast transmission electron microscope with picosecond temporal resolution and nanometer spatial resolution

Science.gov (United States)

Xiang, D.; Fu, F.; Zhang, J.; Huang, X.; Wang, L.; Wang, X.; Wan, W.

2014-09-01

We present feasibility study of an accelerator-based ultrafast transmission electron microscope (u-TEM) capable of producing a full field image in a single-shot with simultaneous picosecond temporal resolution and nanometer spatial resolution. We study key physics related to performance of u-TEMs and discuss major challenges as well as possible solutions for practical realization of u-TEMs. The feasibility of u-TEMs is confirmed through simulations using realistic electron beam parameters. We anticipate that u-TEMs with a product of temporal and spatial resolution beyond 10-19 ms will open up new opportunities in probing matter at ultrafast temporal and ultrasmall spatial scales.

Electrically active sodium-related defect centres in silicon

DEFF Research Database (Denmark)

Dahl, Espen; Madsbøll, J.; Søiland, A.-K.

2013-01-01

Electrically active defect centres related to sodium in silicon have been examined with deep level transient spectroscopy, and their recombination potential analysed with the microwave photoconductive decay technique. In order to investigate the entire silicon band gap for defect centres, both p-...

Silicon Alloying On Aluminium Based Alloy Surface

International Nuclear Information System (INIS)

Suryanto

2002-01-01

Silicon alloying on surface of aluminium based alloy was carried out using electron beam. This is performed in order to enhance tribological properties of the alloy. Silicon is considered most important alloying element in aluminium alloy, particularly for tribological components. Prior to silicon alloying. aluminium substrate were painted with binder and silicon powder and dried in a furnace. Silicon alloying were carried out in a vacuum chamber. The Silicon alloyed materials were assessed using some techniques. The results show that silicon alloying formed a composite metal-non metal system in which silicon particles are dispersed in the alloyed layer. Silicon content in the alloyed layer is about 40% while in other place is only 10.5 %. The hardness of layer changes significantly. The wear properties of the alloying alloys increase. Silicon surface alloying also reduced the coefficient of friction for sliding against a hardened steel counter face, which could otherwise be higher because of the strong adhesion of aluminium to steel. The hardness of the silicon surface alloyed material dropped when it underwent a heating cycle similar to the ion coating process. Hence, silicon alloying is not a suitable choice for use as an intermediate layer for duplex treatment

Visible light emission from porous silicon carbide

DEFF Research Database (Denmark)

Ou, Haiyan; Lu, Weifang

2017-01-01

Light-emitting silicon carbide is emerging as an environment-friendly wavelength converter in the application of light-emitting diode based white light source for two main reasons. Firstly, SiC has very good thermal conductivity and therefore a good substrate for GaN growth in addition to the small...... lattice mismatch. Secondly, SiC material is abundant, containing no rear-earth element material as commercial phosphor. In this paper, fabrication of porous SiC is introduced, and their morphology and photoluminescence are characterized. Additionally, the carrier lifetime of the porous SiC is measured...... by time-resolved photoluminescence. The ultrashort lifetime in the order of ~70ps indicates porous SiC is very promising for the application in the ultrafast visible light communications....

Characterization of silicon- and carbon-based composite anodes for lithium-ion batteries

International Nuclear Information System (INIS)

Khomenko, Volodymyr G.; Barsukov, Viacheslav Z.

2007-01-01

In recent years development of active materials for negative electrodes has been of great interest. Special attention has been focused on the active materials possessing higher reversible capacity than that of conventional graphite. In the present work the electrochemical performance of some carbon/silicon-based materials has been analyzed. For this purpose various silicon-based composites were prepared using such carbon materials as graphite, hard carbon and graphitized carbon black. An analysis of charging-discharging processes at electrodes based on different carbon materials has shown that graphite modified with silicon is the most promising anode material. It has also been revealed that the irreversible capacity mainly depends on the content of Si. An optimum content of Si has been determined with taking into account that high irreversible capacity is not suitable for practical application in lithium-ion batteries. This content falls within the range of 8-10 wt%. The reversible capacity of graphite modified with 8 wt% carbon-coated Si was as high as 604 mAh g -1 . The irreversible capacity loss with this material was as low as 8.1%. The small irreversible capacity of the material allowed developing full lithium-ion rechargeable cells in the 2016 coin cell configuration. Lithium-ion batteries based on graphite modified with silicon show gravimetric and volumetric specific energy densities which are higher by approximately 20% than those for a lithium-ion battery based on natural graphite

Composition of silicon fibrous nanostructures synthesized using ultrafast laser pulses under ambient conditions

Directory of Open Access Journals (Sweden)

Sivakumar M.

2015-01-01

Full Text Available In this study the composition of nanostructures generated owing to ablation of crystalline silicon using high repletion rate femtosecond laser under ambient condition is investigated. The web-like silicon fibrous nanostructures are formed in and around the laser irradiated area. Electron Microscopy investigation revealed that the nanostructures are made of nanoparticles of size about 40 nm. In addition Micro-Raman analysis shows that the nanofibrous structures comprises a mixture of amorphous and polycrystalline silicon. X-ray photoelectron spectroscopy analysis reveals the oxidized and un-oxidized elemental states of silicon in the nanostructures. Moreover web-like fibrous nanostructures are generated due to condensation of super saturated vapour and subsequent nucleus growth in the laser induced plasma plume.

Hydrogen-terminated mesoporous silicon monoliths with huge surface area as alternative Si-based visible light-active photocatalysts

KAUST Repository

Li, Ting; Li, Jun; Zhang, Qiang; Blazeby, Emma; Shang, Congxiao; Xu, Hualong; Zhang, Xixiang; Chao, Yimin

2016-01-01

Silicon-based nanostructures and their related composites have drawn tremendous research interest in solar energy storage and conversion. Mesoporous silicon with a huge surface area of 400-900 m2 g-1 developed by electrochemical etching exhibits

High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit.

Science.gov (United States)

Shiue, Ren-Jye; Gao, Yuanda; Wang, Yifei; Peng, Cheng; Robertson, Alexander D; Efetov, Dmitri K; Assefa, Solomon; Koppens, Frank H L; Hone, James; Englund, Dirk

2015-11-11

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

Optimization and practical implementation of ultrafast 2D NMR experiments

Energy Technology Data Exchange (ETDEWEB)

Queiroz Junior, Luiz H. K., E-mail: professorkeng@gmail.com [Universidade Federal de Sao Carlos (UFSC), SP (Brazil). Departamento de Quimica; Universidade Federal de Goias (UFGO), Goiania, GO (Brazil). Inst. de Quimica; Ferreira, Antonio G. [Universidade Federal de Sao Carlos (UFSC), SP (Brazil). Departamento de Quimica; Giraudeau, Patrick [Universite de Nantes (France). CNRS, Chimie et Interdisciplinarite: Synthese, Analyse, Modelisation

2013-09-01

Ultrafast 2D NMR is a powerful methodology that allows recording of a 2D NMR spectrum in a fraction of second. However, due to the numerous non-conventional parameters involved in this methodology its implementation is no trivial task. Here, an optimized experimental protocol is carefully described to ensure efficient implementation of ultrafast NMR. The ultrafast spectra resulting from this implementation are presented based on the example of two widely used 2D NMR experiments, COSY and HSQC, obtained in 0.2 s and 41 s, respectively. (author)

A spectroelectrochemical cell for ultrafast two-dimensional infrared spectroscopy

Energy Technology Data Exchange (ETDEWEB)

El Khoury, Youssef; Van Wilderen, Luuk J. G. W.; Vogt, Tim; Winter, Ernst; Bredenbeck, Jens, E-mail: bredenbeck@biophysik.uni-frankfurt.org, E-mail: bredenbeck@biophysik.uni-frankfurt.de [Institut für Biophysik, Johann Wolfgang Goethe-Universität, Max-von-Laue-Strasse 1, 60438 Frankfurt (Germany)

2015-08-15

A spectroelectrochemical cell has been designed to combine electrochemistry and ultrafast two-dimensional infrared (2D-IR) spectroscopy, which is a powerful tool to extract structure and dynamics information on the femtosecond to picosecond time scale. Our design is based on a gold mirror with the dual role of performing electrochemistry and reflecting IR light. To provide the high optical surface quality required for laser spectroscopy, the gold surface is made by electron beam evaporation on a glass substrate. Electrochemical cycling facilitates in situ collection of ultrafast dynamics of redox-active molecules by means of 2D-IR. The IR beams are operated in reflection mode so that they travel twice through the sample, i.e., the signal size is doubled. This methodology is optimal for small sample volumes and successfully tested with the ferricyanide/ferrocyanide redox system of which the corresponding electrochemically induced 2D-IR difference spectrum is reported.

A spectroelectrochemical cell for ultrafast two-dimensional infrared spectroscopy

International Nuclear Information System (INIS)

El Khoury, Youssef; Van Wilderen, Luuk J. G. W.; Vogt, Tim; Winter, Ernst; Bredenbeck, Jens

2015-01-01

A spectroelectrochemical cell has been designed to combine electrochemistry and ultrafast two-dimensional infrared (2D-IR) spectroscopy, which is a powerful tool to extract structure and dynamics information on the femtosecond to picosecond time scale. Our design is based on a gold mirror with the dual role of performing electrochemistry and reflecting IR light. To provide the high optical surface quality required for laser spectroscopy, the gold surface is made by electron beam evaporation on a glass substrate. Electrochemical cycling facilitates in situ collection of ultrafast dynamics of redox-active molecules by means of 2D-IR. The IR beams are operated in reflection mode so that they travel twice through the sample, i.e., the signal size is doubled. This methodology is optimal for small sample volumes and successfully tested with the ferricyanide/ferrocyanide redox system of which the corresponding electrochemically induced 2D-IR difference spectrum is reported

Active silicon x-ray for measuring electron temperature

International Nuclear Information System (INIS)

Snider, R.T.

1994-07-01

Silicon diodes are commonly used for x-ray measurements in the soft x-ray region between a few hundred ev and 20 keV. Recent work by Cho has shown that the charge collecting region in an underbiased silicon detector is the depletion depth plus some contribution from a region near the depleted region due to charge-diffusion. The depletion depth can be fully characterized as a function of the applied bias voltage and is roughly proportional to the squart root of the bias voltage. We propose a technique to exploit this effect to use the silicon within the detector as an actively controlled x-ray filter. With reasonable silicon manufacturing methods, a silicon diode detector can be constructed in which the sensitivity of the collected charge to the impinging photon energy spectrum can be changed dynamically in the visible to above the 20 keV range. This type of detector could be used to measure the electron temperature in, for example, a tokamak plasma by sweeping the applied bias voltage during a plasma discharge. The detector samples different parts of the energy spectrum during the bias sweep, and the data collected contains enough information to determine the electron temperature. Benefits and limitations of this technique will be discussed along with comparisons to similar methods for measuring electron temperature and other applications of an active silicon x-ray filter

Coherent combination of ultrafast fiber amplifiers

International Nuclear Information System (INIS)

Hanna, Marc; Guichard, Florent; Druon, Frédéric; Georges, Patrick; Zaouter, Yoann; Papadopoulos, Dimitris N

2016-01-01

We review recent progress in coherent combining of femtosecond pulses amplified in optical fibers as a way to scale the peak and average power of ultrafast sources. Different methods of achieving coherent pulse addition in space (beam combining) and time (divided pulse amplification) domains are described. These architectures can be widely classified into active methods, where the relative phases between pulses are subject to a servomechanism, and passive methods, where phase matching is inherent to the geometry. Other experiments that combine pulses with different spectral contents, pulses that have been nonlinearly broadened or successive pulses from a mode-locked laser oscillator, are then presented. All these techniques allow access to unprecedented parameter range for fiber ultrafast sources. (topical review)

Ultrafast Carbon Dioxide Sorption Kinetics Using Lithium Silicate Nanowires.

Science.gov (United States)

Nambo, Apolo; He, Juan; Nguyen, Tu Quang; Atla, Veerendra; Druffel, Thad; Sunkara, Mahendra

2017-06-14

In this paper, the Li 4 SiO 4 nanowires (NWs) were shown to be promising for CO 2 capture with ultrafast kinetics. Specifically, the nanowire powders exhibited an uptake of 0.35 g g -1 of CO 2 at an ultrafast adsorption rate of 0.22 g g -1 min -1 at 650-700 °C. Lithium silicate (Li 4 SiO 4 ) nanowires and nanopowders were synthesized using a "solvo-plasma" technique involving plasma oxidation of silicon precursors mixed with lithium hydroxide. The kinetic parameter values (k) extracted from sorption kinetics obtained using NW powders are 1 order of magnitude higher than those previously reported for the Li 4 SiO 4 -CO 2 reaction system. The time scales for CO 2 sorption using nanowires are approximately 3 min and two orders magnitude faster compared to those obtained using lithium silicate powders with spherical morphologies and aggregates. Furthermore, Li 4 SiO 4 nanowire powders showed reversibility through sorption-desorption cycles indicating their suitability for CO 2 capture applications. All of the morphologies of Li 4 SiO 4 powders exhibited a double exponential behavior in the adsorption kinetics indicating two distinct time constants for kinetic and the mass transfer limited regimes.

Direct Characterization of Ultrafast Energy-Time Entangled Photon Pairs.

Science.gov (United States)

MacLean, Jean-Philippe W; Donohue, John M; Resch, Kevin J

2018-02-02

Energy-time entangled photons are critical in many quantum optical phenomena and have emerged as important elements in quantum information protocols. Entanglement in this degree of freedom often manifests itself on ultrafast time scales, making it very difficult to detect, whether one employs direct or interferometric techniques, as photon-counting detectors have insufficient time resolution. Here, we implement ultrafast photon counters based on nonlinear interactions and strong femtosecond laser pulses to probe energy-time entanglement in this important regime. Using this technique and single-photon spectrometers, we characterize all the spectral and temporal correlations of two entangled photons with femtosecond resolution. This enables the witnessing of energy-time entanglement using uncertainty relations and the direct observation of nonlocal dispersion cancellation on ultrafast time scales. These techniques are essential to understand and control the energy-time degree of freedom of light for ultrafast quantum optics.

Patellofemoral joint motion: Evaluation by ultrafast computed tomography

International Nuclear Information System (INIS)

Stanford, W.; Phelan, J.; Kathol, M.H.; Rooholamini, S.A.; El-Khoury, G.Y.; Palutsis, G.R.; Albright, J.P.

1988-01-01

Patellofemoral maltracking is a recognized cause of peripatellar pain. Clinicians currently rely on observation, palpation, and static radiographic images to evaluate the symptomatic patient. Ultrafast computed tomography (ultrafast CT) offers objective observations of the dynamic influences of muscle contraction on the patellofemoral joint as the knee is actively moved through a range of motion from 90 0 C flexion of full extension. This study reports our initial observations and establishes a range of normal values so that patients with a clinical suspicion of patellar maltracking may be evaluated. (orig./GDG)

Patellofemoral joint motion: Evaluation by ultrafast computed tomography

Energy Technology Data Exchange (ETDEWEB)

Stanford, W.; Phelan, J.; Kathol, M.H.; Rooholamini, S.A.; El-Khoury, G.Y.; Palutsis, G.R.; Albright, J.P.

1988-10-01

Patellofemoral maltracking is a recognized cause of peripatellar pain. Clinicians currently rely on observation, palpation, and static radiographic images to evaluate the symptomatic patient. Ultrafast computed tomography (ultrafast CT) offers objective observations of the dynamic influences of muscle contraction on the patellofemoral joint as the knee is actively moved through a range of motion from 90/sup 0/C flexion of full extension. This study reports our initial observations and establishes a range of normal values so that patients with a clinical suspicion of patellar maltracking may be evaluated. (orig./GDG).

Photon-trapping micro/nanostructures for high linearity in ultra-fast photodiodes

Science.gov (United States)

Cansizoglu, Hilal; Gao, Yang; Perez, Cesar Bartolo; Ghandiparsi, Soroush; Ponizovskaya Devine, Ekaterina; Cansizoglu, Mehmet F.; Yamada, Toshishige; Elrefaie, Aly F.; Wang, Shih-Yuan; Islam, M. Saif

2017-08-01

Photodetectors (PDs) in datacom and computer networks where the link length is up to 300 m, need to handle higher than typical input power used in other communication links. Also, to reduce power consumption due to equalization at high speed (>25Gb/s), the datacom links will use PAM-4 signaling instead of NRZ with stringent receiver linearity requirements. Si PDs with photon-trapping micro/nanostructures are shown to have high linearity in output current verses input optical power. Though there is less silicon material due to the holes, the micro-/nanostructured holes collectively reradiate the light to an in-plane direction of the PD surface and can avoid current crowding in the PD. Consequently, the photocurrent per unit volume remains at a low level contributing to high linearity in the photocurrent. We present the effect of design and lattice patterns of micro/nanostructures on the linearity of ultra-fast silicon PDs designed for high speed multi gigabit data networks.

Perspective: Ultrafast magnetism and THz spintronics

Energy Technology Data Exchange (ETDEWEB)

Walowski, Jakob; Münzenberg, Markus [Institut für Physik, Ernst-Moritz-Arndt-Universität Greifswald, 17489 Greifswald (Germany)

2016-10-14

This year the discovery of femtosecond demagnetization by laser pulses is 20 years old. For the first time, this milestone work by Bigot and coworkers gave insight directly into the time scales of microscopic interactions that connect the spin and electron system. While intense discussions in the field were fueled by the complexity of the processes in the past, it now became evident that it is a puzzle of many different parts. Rather than providing an overview that has been presented in previous reviews on ultrafast processes in ferromagnets, this perspective will show that with our current depth of knowledge the first applications are developed: THz spintronics and all-optical spin manipulation are becoming more and more feasible. The aim of this perspective is to point out where we can connect the different puzzle pieces of understanding gathered over 20 years to develop novel applications. Based on many observations in a large number of experiments. Differences in the theoretical models arise from the localized and delocalized nature of ferromagnetism. Transport effects are intrinsically non-local in spintronic devices and at interfaces. We review the need for multiscale modeling to address the processes starting from electronic excitation of the spin system on the picometer length scale and sub-femtosecond time scale, to spin wave generation, and towards the modeling of ultrafast phase transitions that altogether determine the response time of the ferromagnetic system. Today, our current understanding gives rise to the first usage of ultrafast spin physics for ultrafast magnetism control: THz spintronic devices. This makes the field of ultrafast spin-dynamics an emerging topic open for many researchers right now.

Perspective: Ultrafast magnetism and THz spintronics

International Nuclear Information System (INIS)

Walowski, Jakob; Münzenberg, Markus

2016-01-01

This year the discovery of femtosecond demagnetization by laser pulses is 20 years old. For the first time, this milestone work by Bigot and coworkers gave insight directly into the time scales of microscopic interactions that connect the spin and electron system. While intense discussions in the field were fueled by the complexity of the processes in the past, it now became evident that it is a puzzle of many different parts. Rather than providing an overview that has been presented in previous reviews on ultrafast processes in ferromagnets, this perspective will show that with our current depth of knowledge the first applications are developed: THz spintronics and all-optical spin manipulation are becoming more and more feasible. The aim of this perspective is to point out where we can connect the different puzzle pieces of understanding gathered over 20 years to develop novel applications. Based on many observations in a large number of experiments. Differences in the theoretical models arise from the localized and delocalized nature of ferromagnetism. Transport effects are intrinsically non-local in spintronic devices and at interfaces. We review the need for multiscale modeling to address the processes starting from electronic excitation of the spin system on the picometer length scale and sub-femtosecond time scale, to spin wave generation, and towards the modeling of ultrafast phase transitions that altogether determine the response time of the ferromagnetic system. Today, our current understanding gives rise to the first usage of ultrafast spin physics for ultrafast magnetism control: THz spintronic devices. This makes the field of ultrafast spin-dynamics an emerging topic open for many researchers right now.

Optothermal response of a single silicon nanotip

Science.gov (United States)

Vella, A.; Shinde, D.; Houard, J.; Silaeva, E.; Arnoldi, L.; Blum, I.; Rigutti, L.; Pertreux, E.; Maioli, P.; Crut, A.; Del Fatti, N.

2018-02-01

The optical properties and thermal dynamics of conical single silicon nanotips are experimentally and theoretically investigated. The spectral and spatial dependencies of their optical extinction are quantitatively measured by spatial modulation spectroscopy (SMS). A nonuniform optical extinction along the tip axis and an enhanced near-infrared absorption, as compared to bulk crystalline silicon, are evidenced. This information is a key input for computing the thermal response of single silicon nanotips under ultrafast laser illumination, which is investigated by laser assisted atom probe tomography (La-APT) used as a highly sensitive temperature probe. A combination of these two experimental techniques and comparison with modeling also permits us to elucidate the impact of thermal effects on the laser assisted field evaporation process. Extension of this coupled approach opens up future perspectives for the quantitative study of the optical and thermal properties of a wide class of individual nano-objects, in particular elongated ones such as nanotubes, nanowires, and nanocones, which constitute promising nanosources for electron and/or ion emission.

Active graphene-silicon hybrid diode for terahertz waves.

Science.gov (United States)

Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

2015-05-11

Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

T2 mapping of muscle activity using ultrafast imaging

International Nuclear Information System (INIS)

Tawara, Noriyuki; Nitta, Osamu; Kuruma, Hironobu; Niitsu, Mamoru; Itoh, Akiyoshi

2011-01-01

Measuring exercise-induced muscle activity is essential in sports medicine. Previous studies proposed measuring transverse relaxation time (T 2 ) using muscle functional magnetic resonance imaging (mfMRI) to map muscle activity. However, mfMRI uses a spin-echo (SE) sequence that requires several minutes for acquisition. We evaluated the feasibility of T 2 mapping of muscle activity using ultrafast imaging, called fast-acquired mfMRI (fast-mfMRI), to reduce image acquisition time. The current method uses 2 pulse sequences, spin-echo echo-planar imaging (SE-EPI) and true fast imaging with steady precession (TrueFISP). SE-EPI images are used to calculate T 2 , and TrueFISP images are used to obtain morphological information. The functional image is produced by subtracting the image of muscle activity obtained using T 2 at rest from that produced after exercise. Final fast-mfMRI images are produced by fusing the functional images with the morphologic images. Ten subjects repeated ankle plantar flexion 200 times. In the fused images, the areas of activated muscle in the fast-mfMRI and SE-EPI images were identical. The geometric location of the fast-mfMRI did not differ between the morphologic and functional images. Morphological and functional information from fast-mfMRI can be applied to the human trunk, which requires limited scan duration. The difference obtained by subtracting T 2 at rest from T 2 after exercise can be used as a functional image of muscle activity. (author)

Ultrafast cone-beam CT scatter correction with GPU-based Monte Carlo simulation

Directory of Open Access Journals (Sweden)

Yuan Xu

2014-03-01

Full Text Available Purpose: Scatter artifacts severely degrade image quality of cone-beam CT (CBCT. We present an ultrafast scatter correction framework by using GPU-based Monte Carlo (MC simulation and prior patient CT image, aiming at automatically finish the whole process including both scatter correction and reconstruction within 30 seconds.Methods: The method consists of six steps: 1 FDK reconstruction using raw projection data; 2 Rigid Registration of planning CT to the FDK results; 3 MC scatter calculation at sparse view angles using the planning CT; 4 Interpolation of the calculated scatter signals to other angles; 5 Removal of scatter from the raw projections; 6 FDK reconstruction using the scatter-corrected projections. In addition to using GPU to accelerate MC photon simulations, we also use a small number of photons and a down-sampled CT image in simulation to further reduce computation time. A novel denoising algorithm is used to eliminate MC noise from the simulated scatter images caused by low photon numbers. The method is validated on one simulated head-and-neck case with 364 projection angles.Results: We have examined variation of the scatter signal among projection angles using Fourier analysis. It is found that scatter images at 31 angles are sufficient to restore those at all angles with < 0.1% error. For the simulated patient case with a resolution of 512 × 512 × 100, we simulated 5 × 106 photons per angle. The total computation time is 20.52 seconds on a Nvidia GTX Titan GPU, and the time at each step is 2.53, 0.64, 14.78, 0.13, 0.19, and 2.25 seconds, respectively. The scatter-induced shading/cupping artifacts are substantially reduced, and the average HU error of a region-of-interest is reduced from 75.9 to 19.0 HU.Conclusion: A practical ultrafast MC-based CBCT scatter correction scheme is developed. It accomplished the whole procedure of scatter correction and reconstruction within 30 seconds.----------------------------Cite this

An FPGA-based silicon neuronal network with selectable excitability silicon neurons

Directory of Open Access Journals (Sweden)

Jing eLi

2012-12-01

Full Text Available This paper presents a digital silicon neuronal network which simulates the nerve system in creatures and has the ability to execute intelligent tasks, such as associative memory. Two essential elements, the mathematical-structure-based digital spiking silicon neuron (DSSN and the transmitter release based silicon synapse, allow the network to show rich dynamic behaviors and are computationally efficient for hardware implementation. We adopt mixed pipeline and parallel structure and shift operations to design a sufficient large and complex network without excessive hardware resource cost. The network with $256$ full-connected neurons is built on a Digilent Atlys board equipped with a Xilinx Spartan-6 LX45 FPGA. Besides, a memory control block and USB control block are designed to accomplish the task of data communication between the network and the host PC. This paper also describes the mechanism of associative memory performed in the silicon neuronal network. The network is capable of retrieving stored patterns if the inputs contain enough information of them. The retrieving probability increases with the similarity between the input and the stored pattern increasing. Synchronization of neurons is observed when the successful stored pattern retrieval occurs.

Ultrafast Graphene Photonics and Optoelectronics

Science.gov (United States)

2017-04-14

AFRL-AFOSR-JP-TR-2017-0032 Ultrafast Graphene Photonics and Optoelectronics Kuang-Hsiung Wu National Chiao Tung University Final Report 04/14/2017...DATES COVERED (From - To) 18 Apr 2013 to 17 Apr 2016 4. TITLE AND SUBTITLE Ultrafast Graphene Photonics and Optoelectronics 5a.  CONTRACT NUMBER 5b...Prescribed by ANSI Std. Z39.18 Final Report for AOARD Grant FA2386-13-1-4022 “Ultrafast Graphene Photonics and Optoelectronics” Date May 23th, 2016

Imprinted silicon-based nanophotonics

DEFF Research Database (Denmark)

Borel, Peter Ingo; Olsen, Brian Bilenberg; Frandsen, Lars Hagedorn

2007-01-01

We demonstrate and optically characterize silicon-on-insulator based nanophotonic devices fabricated by nanoimprint lithography. In our demonstration, we have realized ordinary and topology-optimized photonic crystal waveguide structures. The topology-optimized structures require lateral pattern ...

All-optical temporal integration of ultrafast pulse waveforms.

Science.gov (United States)

Park, Yongwoo; Ahn, Tae-Jung; Dai, Yitang; Yao, Jianping; Azaña, José

2008-10-27

An ultrafast all-optical temporal integrator is experimentally demonstrated. The demonstrated integrator is based on a very simple and practical solution only requiring the use of a widely available all-fiber passive component, namely a reflection uniform fiber Bragg grating (FBG). This design allows overcoming the severe speed (bandwidth) limitations of the previously demonstrated photonic integrator designs. We demonstrate temporal integration of a variety of ultrafast optical waveforms, including Gaussian, odd-symmetry Hermite Gaussian, and (odd-)symmetry double pulses, with temporal features as fast as ~6-ps, which is about one order of magnitude faster than in previous photonic integration demonstrations. The developed device is potentially interesting for a multitude of applications in all-optical computing and information processing, ultrahigh-speed optical communications, ultrafast pulse (de-)coding, shaping and metrology.

InP membrane on silicon integration technology

NARCIS (Netherlands)

Smit, M.K.

2013-01-01

Integration of light sources in silicon photonics is usually done with an active InP-based layer stack on a silicon-based photonic circuit-layer. InP Membrane On Silicon (IMOS) technology integrates all functionality in a single InP-based layer.

Activation analysis for measurements of silicon, phosphorus, alkali metals and other elements in high-purity metals

International Nuclear Information System (INIS)

Schmid, W.

1988-01-01

In the present thesis, methods of activation analysis were developed for the determination of the elements silicon, phosphorus, potassium, sodium, i.a. in the high-purity metals vanadium, niobium, tantalum, tungsten, molybdenum and iron. The determination of silicon is based on the activation of samples with reactor neutrons, on a subsequent radiochemical separation of the tracer radionuclide 31 Si resulting from the reaction 30 Si(n,γ), and on the measurement of β activity with the help of a liquid scintillation measuring desk. Since the tracer radionuclide 31 Si almost exclusively emits β rays which are not sufficiently nuclide-specific, silicon was selectively separated from the other sample elements by being distilled as silicon tetrafluoride. The processing of the residue following the separation of silicon permits a complementary gamma-spectroscopic determination of a whole lot of additional elements. Thus, the separation of the nuclide 182 Ta with the anion exchanger Dowex 1X8 from HF/H 2 SO 4 medium permits the determination of 22 elements in vanadium, niobium and tantalum. Phosphorus content is determined by activating the samples with rapid neutrons (cyclotrons) via the reaction 31 P(n,p) 31 Si. (orig./MM) [de

Real-time control of ultrafast laser micromachining by laser-induced breakdown spectroscopy

International Nuclear Information System (INIS)

Tong Tao; Li Jinggao; Longtin, Jon P.

2004-01-01

Ultrafast laser micromachining provides many advantages for precision micromachining. One challenging problem, however, particularly for multilayer and heterogeneous materials, is how to prevent a given material from being ablated, as ultrafast laser micromachining is generally material insensitive. We present a real-time feedback control system for an ultrafast laser micromachining system based on laser-induced breakdown spectroscopy (LIBS). The characteristics of ultrafast LIBS are reviewed and discussed so as to demonstrate the feasibility of the technique. Comparison methods to identify the material emission patterns are developed, and several of the resulting algorithms were implemented into a real-time computer control system. LIBS-controlled micromachining is demonstrated for the fabrication of microheater structures on thermal sprayed materials. Compared with a strictly passive machining process without any such feedback control, the LIBS-based system provides several advantages including less damage to the substrate layer, reduced machining time, and more-uniform machining features

Electrically active defects in solar grade multicrystalline silicon

DEFF Research Database (Denmark)

Dahl, Espen

2013-01-01

Shortage in high purity silicon feedstock, as a result of the formidable increased demand for solar cell devices during the last two decades, can be mitigated by the introduction of cheaper feedstock of solar grade (So-G) quality. Silicon produced through the metallurgical process route has shown...... the potential to be such a feedstock. However, this feedstock has only few years of active commercial history and the detailed understanding of the nature of structural defects in this material still has fundamental shortcomings. In this thesis the electrical activity of structural defects, commonly associated...

Femtosecond luminescence spectroscopy of core states in silicon nanocrystals

Czech Academy of Sciences Publication Activity Database

Žídek, K.; Trojánek, F.; Malý, P.; Ondič, Lukáš; Pelant, Ivan; Dohnalová, Kateřina; Šiller, L.; Little, R.; Horrocks, B.R.

2010-01-01

Roč. 18, č. 24 (2010), s. 25241-25249 ISSN 1094-4087 R&D Projects: GA AV ČR KAN400100701; GA AV ČR(CZ) IAA101120804; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : silicon nanocrystals * ultrafast spectroscopy * photoluminescence spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.749, year: 2010 http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-24-25241

Ultrafast Hierarchical OTDM/WDM Network

Directory of Open Access Journals (Sweden)

Hideyuki Sotobayashi

2003-12-01

Full Text Available Ultrafast hierarchical OTDM/WDM network is proposed for the future core-network. We review its enabling technologies: C- and L-wavelength-band generation, OTDM-WDM mutual multiplexing format conversions, and ultrafast OTDM wavelengthband conversions.

Compounds from silicones alter enzyme activity in curing barnacle glue and model enzymes.

Science.gov (United States)

Rittschof, Daniel; Orihuela, Beatriz; Harder, Tilmann; Stafslien, Shane; Chisholm, Bret; Dickinson, Gary H

2011-02-17

Attachment strength of fouling organisms on silicone coatings is low. We hypothesized that low attachment strength on silicones is, in part, due to the interaction of surface available components with natural glues. Components could alter curing of glues through bulk changes or specifically through altered enzyme activity. GC-MS analysis of silicone coatings showed surface-available siloxanes when the coatings were gently rubbed with a cotton swab for 15 seconds or given a 30 second rinse with methanol. Mixtures of compounds were found on 2 commercial and 8 model silicone coatings. The hypothesis that silicone components alter glue curing enzymes was tested with curing barnacle glue and with commercial enzymes. In our model, barnacle glue curing involves trypsin-like serine protease(s), which activate enzymes and structural proteins, and a transglutaminase which cross-links glue proteins. Transglutaminase activity was significantly altered upon exposure of curing glue from individual barnacles to silicone eluates. Activity of purified trypsin and, to a greater extent, transglutaminase was significantly altered by relevant concentrations of silicone polymer constituents. Surface-associated silicone compounds can disrupt glue curing and alter enzyme properties. Altered curing of natural glues has potential in fouling management.

A 75 GHz silicon metal-semiconductor-metal Schottky photodiode

International Nuclear Information System (INIS)

Alexandrou, S.; Wang, C.; Hsiang, T.Y.; Liu, M.Y.; Chou, S.Y.

1993-01-01

The ultrafast characteristics of crystalline-silicon metal-semiconductor-metal (MSM) photodiodes with 300 nm finger width and spacing were measured with a subpicosecond electro-optic sampling system. Electrical responses with full width at half maximum as short as 5.5 and 11 ps, at corresponding 3 dB bandwidths of 75 and 38 GHz, were generated by violet and red photons, respectively. The difference is attributed to the photon penetration depth which is much larger than the diode finger spacing at red, but smaller at violet. Light-intensity dependence was also examined at different wavelengths, indicating a linear relation and a higher sensitivity in the violet. These results not only demonstrated the fastest silicon photodetector reported to date, but also pinpointed the dominant speed-limiting factor of silicon MSM photodiodes. A configuration is suggested to improve the speed of these detectors at long wavelengths

Ultrafast protein structure-based virtual screening with Panther

Science.gov (United States)

Niinivehmas, Sanna P.; Salokas, Kari; Lätti, Sakari; Raunio, Hannu; Pentikäinen, Olli T.

2015-10-01

Molecular docking is by far the most common method used in protein structure-based virtual screening. This paper presents Panther, a novel ultrafast multipurpose docking tool. In Panther, a simple shape-electrostatic model of the ligand-binding area of the protein is created by utilizing the protein crystal structure. The features of the possible ligands are then compared to the model by using a similarity search algorithm. On average, one ligand can be processed in a few minutes by using classical docking methods, whereas using Panther processing takes Panther protocol can be used in several applications, such as speeding up the early phases of drug discovery projects, reducing the number of failures in the clinical phase of the drug development process, and estimating the environmental toxicity of chemicals. Panther-code is available in our web pages (http://www.jyu.fi/panther) free of charge after registration.

Avant-Garde Ultrafast Laser Writing

Directory of Open Access Journals (Sweden)

Kazansky P. G.

2013-11-01

Full Text Available Ultrafast laser processing of transparent materials reveals new phenomena. Reviewed, are recent demonstrations of 5D optical memory, vortex polarization and Airy beam converters employing self-assembled nanostructuring, ultrafast laser calligraphy and polarization writing control using pulses with tilted front.

Ultrafast nonlinear optics

CERN Document Server

Leburn, Christopher; Reid, Derryck

2013-01-01

The field of ultrafast nonlinear optics is broad and multidisciplinary, and encompasses areas concerned with both the generation and measurement of ultrashort pulses of light, as well as those concerned with the applications of such pulses. Ultrashort pulses are extreme events – both in terms of their durations, and also the high peak powers which their short durations can facilitate. These extreme properties make them powerful experiment tools. On one hand, their ultrashort durations facilitate the probing and manipulation of matter on incredibly short timescales. On the other, their ultrashort durations can facilitate high peak powers which can drive highly nonlinear light-matter interaction processes. Ultrafast Nonlinear Optics covers a complete range of topics, both applied and fundamental in nature, within the area of ultrafast nonlinear optics. Chapters 1 to 4 are concerned with the generation and measurement of ultrashort pulses. Chapters 5 to 7 are concerned with fundamental applications of ultrasho...

Silicon-based sleeve devices for chemical reactions

Science.gov (United States)

Northrup, M. Allen; Mariella, Jr., Raymond P.; Carrano, Anthony V.; Balch, Joseph W.

1996-01-01

A silicon-based sleeve type chemical reaction chamber that combines heaters, such as doped polysilicon for heating, and bulk silicon for convection cooling. The reaction chamber combines a critical ratio of silicon and silicon nitride to the volume of material to be heated (e.g., a liquid) in order to provide uniform heating, yet low power requirements. The reaction chamber will also allow the introduction of a secondary tube (e.g., plastic) into the reaction sleeve that contains the reaction mixture thereby alleviating any potential materials incompatibility issues. The reaction chamber may be utilized in any chemical reaction system for synthesis or processing of organic, inorganic, or biochemical reactions, such as the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction, which are examples of a synthetic, thermal-cycling-based reaction. The reaction chamber may also be used in synthesis instruments, particularly those for DNA amplification and synthesis.

Ultrafast scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Botkin, D.A. [California Univ., Berkeley, CA (United States). Dept. of Physics]|[Lawrence Berkeley Lab., CA (United States)

1995-09-01

I have developed an ultrafast scanning tunneling microscope (USTM) based on uniting stroboscopic methods of ultrafast optics and scanned probe microscopy to obtain nanometer spatial resolution and sub-picosecond temporal resolution. USTM increases the achievable time resolution of a STM by more than 6 orders of magnitude; this should enable exploration of mesoscopic and nanometer size systems on time scales corresponding to the period or decay of fundamental excitations. USTM consists of a photoconductive switch with subpicosecond response time in series with the tip of a STM. An optical pulse from a modelocked laser activates the switch to create a gate for the tunneling current, while a second laser pulse on the sample initiates a dynamic process which affects the tunneling current. By sending a large sequence of identical pulse pairs and measuring the average tunnel current as a function of the relative time delay between the pulses in each pair, one can map the time evolution of the surface process. USTM was used to measure the broadband response of the STM`s atomic size tunnel barrier in frequencies from tens to hundreds of GHz. The USTM signal amplitude decays linearly with the tunnel junction conductance, so the spatial resolution of the time-resolved signal is comparable to that of a conventional STM. Geometrical capacitance of the junction does not appear to play an important role in the measurement, but a capacitive effect intimately related to tunneling contributes to the measured signals and may limit the ultimate resolution of the USTM.

Electromechanical stability of electro-active silicone filled with high permittivity particles undergoing large deformation

International Nuclear Information System (INIS)

Liu, Liwu; Liu, Yanju; Zhang, Zhen; Leng, Jinsong; Li, Bo

2010-01-01

In this paper, an expression for the permittivity of electro-active silicone undergoing large deformation with high permittivity particles filled uniformly has been proposed. Two expressions are proposed for the permittivity, one based on experimental tests and the other based on the theory of composite material. By applying the thermodynamic model incorporating linear dielectric permittivity and nonlinear hyperelastic performance, the mechanical performance and electromechanical stability of the coupling system constituted by silicone filled with PMN–PT have been studied. The results show that the critical electric field decreases, namely the stability performance of the system declines when the content of PMN–PT c(v) increases and the electrostrictive coefficients increase. The results are beneficial for us to understand deeply the influence of the filled particle on the stability performance of silicone and to guide the design and manufacture of actuators and sensors based on dielectric elastomers

Polishing of silicon based advanced ceramics

Science.gov (United States)

Klocke, Fritz; Dambon, Olaf; Zunke, Richard; Waechter, D.

2009-05-01

Silicon based advanced ceramics show advantages in comparison to other materials due to their extreme hardness, wear and creep resistance, low density and low coefficient of thermal expansion. As a matter of course, machining requires high efforts. In order to reach demanded low roughness for optical or tribological applications a defect free surface is indispensable. In this paper, polishing of silicon nitride and silicon carbide is investigated. The objective is to elaborate scientific understanding of the process interactions. Based on this knowledge, the optimization of removal rate, surface quality and form accuracy can be realized. For this purpose, fundamental investigations of polishing silicon based ceramics are undertaken and evaluated. Former scientific publications discuss removal mechanisms and wear behavior, but the scientific insight is mainly based on investigations in grinding and lapping. The removal mechanisms in polishing are not fully understood due to complexity of interactions. The role of, e.g., process parameters, slurry and abrasives, and their influence on the output parameters is still uncertain. Extensive technological investigations demonstrate the influence of the polishing system and the machining parameters on the stability and the reproducibility. It is shown that the interactions between the advanced ceramics and the polishing systems is of great relevance. Depending on the kind of slurry and polishing agent the material removal mechanisms differ. The observed effects can be explained by dominating mechanical or chemo-mechanical removal mechanisms. Therefore, hypotheses to state adequate explanations are presented and validated by advanced metrology devices, such as SEM, AFM and TEM.

Carrier dynamics in graphene. Ultrafast many-particle phenomena

Energy Technology Data Exchange (ETDEWEB)

Malic, E.; Brem, S.; Jago, R. [Department of Physics, Chalmers University of Technology, Goeteborg (Sweden); Winzer, T.; Wendler, F.; Knorr, A. [Institut fuer Theoretische Physik, Technische Universitaet Berlin (Germany); Mittendorff, M.; Koenig-Otto, J.C.; Schneider, H.; Helm, M.; Winnerl, S. [Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Ploetzing, T.; Neumaier, D. [Advanced Microelectronic Center Aachen, AMO GmbH, Aachen (Germany)

2017-11-15

Graphene is an ideal material to study fundamental Coulomb- and phonon-induced carrier scattering processes. Its remarkable gapless and linear band structure opens up new carrier relaxation channels. In particular, Auger scattering bridging the valence and the conduction band changes the number of charge carriers and gives rise to a significant carrier multiplication - an ultrafast many-particle phenomenon that is promising for the design of highly efficient photodetectors. Furthermore, the vanishing density of states at the Dirac point combined with ultrafast phonon-induced intraband scattering results in an accumulation of carriers and a population inversion suggesting the design of graphene-based terahertz lasers. Here, we review our work on the ultrafast carrier dynamics in graphene and Landau-quantized graphene is presented providing a microscopic view on the appearance of carrier multiplication and population inversion. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Ultrafast Transient Absorption Spectroscopy of Polymer-Based Organophotoredox Catalysts Mimicking Transition-Metal Complexes

Science.gov (United States)

Jamhawi, Abdelqader; Paul, Anam C.; Smith, Justin D.; Handa, Sachin; Liu, Jinjun

2017-06-01

Transition-metal complexes of rare earth metals including ruthenium and iridium are most commonly employed as visible-light photocatalysts. Despite their highly important and broad applications, they have many disadvantages including high cost associated with low abundance in earth crust, potential toxicity, requirement of specialized ligands for desired activity, and difficulty in recycling of metal contents as well as associated ligands. Polymer-based organophotoredox catalysts are promising alternatives and possess unique advantages such as easier synthesis from inexpensive starting material, longer excited state life time, broad range of activity, sustainability, and recyclability. In this research talk, time-resolved photoluminescence and femtosecond transient absorption (TA) spectroscopy measurements of three novel polymer-based organophotoredox catalysts will be presented. By our synthetic team, their catalytic activity has been proven in some highly valuable chemical transformations, that otherwise require transition metal complexes. Time-resolved spectroscopic investigations have demonstrated that photoinduced processes in these catalysts are similar to the transition metal complexes. Especially, intramolecular vibrational relaxation, internal conversion, and intersystem crossing from the S1 state to the T1 state all occur on a sub-picosecond timescale. The long lifetime of the T1 state ( 2-3 microsecond) renders these polymers potent oxidizing and reducing agents. A spectroscopic and kinetic model has been developed for global fitting of TA spectra in both the frequency and time domains. Implication of the current ultrafast spectroscopy studies of these novel molecules to their roles in photocatalysis will be discussed.

Time-resolved monitoring of enzyme activity with ultrafast Hyper-CEST spectroscopy.

Science.gov (United States)

Döpfert, Jörg; Schnurr, Matthias; Kunth, Martin; Rose, Honor May; Hennig, Andreas; Schröder, Leif

2017-12-23

We propose a method to dynamically monitor the progress of an enzymatic reaction using NMR of hyperpolarized 129 Xe in a host-guest system. It is based on a displacement assay originally designed for fluorescence experiments that exploits the competitive binding of the enzymatic product on the one hand and a reporter dye on the other hand to a supramolecular host. Recently, this assay has been successfully transferred to NMR, using xenon as a reporter, cucurbit[6]uril as supramolecular host, and chemical exchange saturation transfer with hyperpolarized Xe (Hyper-CEST) as detection technique. Its advantage is that the enzyme acts on the unmodified substrate and that only the product is detected through immediate inclusion into the host. We here apply a method that drastically accelerates the acquisition of Hyper-CEST spectra in vitro using magnetic field gradients. This allows monitoring the dynamic progress of the conversion of lysine to cadaverine with a temporal resolution of ~30 s. Moreover, the method only requires to sample the very early onset of the reaction (Hyper-CEST results correlate with xenon T 2 measurements performed during the enzymatic reaction. This suggests that ultrafast Hyper-CEST spectroscopy can be used for dynamically monitoring enzymatic activity with NMR. Copyright © 2017 John Wiley & Sons, Ltd.

Photonic Crystal Sensors Based on Porous Silicon

Directory of Open Access Journals (Sweden)

Claudia Pacholski

2013-04-01

Full Text Available Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential.

Photonic Crystal Sensors Based on Porous Silicon

Science.gov (United States)

Pacholski, Claudia

2013-01-01

Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential. PMID:23571671

Key Success Factors and Future Perspective of Silicon-Based Solar Cells

Directory of Open Access Journals (Sweden)

S. Binetti

2013-01-01

Full Text Available Today, after more than 70 years of continued progress on silicon technology, about 85% of cumulative installed photovolatic (PV modules are based on crystalline silicon (c-Si. PV devices based on silicon are the most common solar cells currently being produced, and it is mainly due to silicon technology that the PV has grown by 40% per year over the last decade. An additional step in the silicon solar cell development is ongoing, and it is related to a further efficiency improvement through defect control, device optimization, surface modification, and nanotechnology approaches. This paper attempts to briefly review the most important advances and current technologies used to produce crystalline silicon solar devices and in the meantime the most challenging and promising strategies acting to increase the efficiency to cost/ratio of silicon solar cells. Eventually, the impact and the potentiality of using a nanotechnology approach in a silicon-based solar cell are also described.

THz-induced ultrafast modulation of NIR refractive index of silicon

DEFF Research Database (Denmark)

Tarekegne, Abebe Tilahun; Hirori, Hideki; Iwaszczuk, Krzysztof

2016-01-01

We measure THz-induced change in refractive index of ∼5×10−3 in high resistivity silicon at 800 nm which indicates generation of high density of free carriers. The change in refractive index increases by more than 30 times with high initial carrier density set by optical excitation compared to op...

Label-free electrical determination of trypsin activity by a silicon-on-insulator based thin film resistor.

Science.gov (United States)

Neff, Petra A; Serr, Andreas; Wunderlich, Bernhard K; Bausch, Andreas R

2007-10-08

A silicon-on-insulator (SOI) based thin film resistor is employed for the label-free determination of enzymatic activity. We demonstrate that enzymes, which cleave biological polyelectrolyte substrates, can be detected by the sensor. As an application, we consider the serine endopeptidase trypsin, which cleaves poly-L-lysine (PLL). We show that PLL adsorbs quasi-irreversibly to the sensor and is digested by trypsin directly at the sensor surface. The created PLL fragments are released into the bulk solution due to kinetic reasons. This results in a measurable change of the surface potential allowing for the determination of trypsin concentrations down to 50 ng mL(-1). Chymotrypsin is a similar endopeptidase with a different specificity, which cleaves PLL with a lower efficiency as compared to trypsin. The activity of trypsin is analyzed quantitatively employing a kinetic model for enzyme-catalyzed surface reactions. Moreover, we have demonstrated the specific inactivation of trypsin by a serine protease inhibitor, which covalently binds to the active site of the enzyme.

Spin-controlled ultrafast vertical-cavity surface-emitting lasers

Science.gov (United States)

Höpfner, Henning; Lindemann, Markus; Gerhardt, Nils C.; Hofmann, Martin R.

2014-05-01

Spin-controlled semiconductor lasers are highly attractive spintronic devices providing characteristics superior to their conventional purely charge-based counterparts. In particular, spin-controlled vertical-cavity surface emitting lasers (spin-VCSELs) promise to offer lower thresholds, enhanced emission intensity, spin amplification, full polarization control, chirp control and ultrafast dynamics. Most important, the ability to control and modulate the polarization state of the laser emission with extraordinarily high frequencies is very attractive for many applications like broadband optical communication and ultrafast optical switches. We present a novel concept for ultrafast spin-VCSELs which has the potential to overcome the conventional speed limitation for directly modulated lasers by the relaxation oscillation frequency and to reach modulation frequencies significantly above 100 GHz. The concept is based on the coupled spin-photon dynamics in birefringent micro-cavity lasers. By injecting spin-polarized carriers in the VCSEL, oscillations of the coupled spin-photon system can by induced which lead to oscillations of the polarization state of the laser emission. These oscillations are decoupled from conventional relaxation oscillations of the carrier-photon system and can be much faster than these. Utilizing these polarization oscillations is thus a very promising approach to develop ultrafast spin-VCSELs for high speed optical data communication in the near future. Different aspects of the spin and polarization dynamics, its connection to birefringence and bistability in the cavity, controlled switching of the oscillations, and the limitations of this novel approach will be analysed theoretically and experimentally for spin-polarized VCSELs at room temperature.

Ultrafast Dynamic Pressure Sensors Based on Graphene Hybrid Structure.

Science.gov (United States)

Liu, Shanbiao; Wu, Xing; Zhang, Dongdong; Guo, Congwei; Wang, Peng; Hu, Weida; Li, Xinming; Zhou, Xiaofeng; Xu, Hejun; Luo, Chen; Zhang, Jian; Chu, Junhao

2017-07-19

Mechanical flexible electronic skin has been focused on sensing various physical parameters, such as pressure and temperature. The studies of material design and array-accessible devices are the building blocks of strain sensors for subtle pressure sensing. Here, we report a new and facile preparation of a graphene hybrid structure with an ultrafast dynamic pressure response. Graphene oxide nanosheets are used as a surfactant to prevent graphene restacking in aqueous solution. This graphene hybrid structure exhibits a frequency-independent pressure resistive sensing property. Exceeding natural skin, such pressure sensors, can provide transient responses from static up to 10 000 Hz dynamic frequencies. Integrated by the controlling system, the array-accessible sensors can manipulate a robot arm and self-rectify the temperature of a heating blanket. This may pave a path toward the future application of graphene-based wearable electronics.

Plasma deposition of amorphous silicon-based materials

CERN Document Server

Bruno, Giovanni; Madan, Arun

1995-01-01

Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Key Features * Focuses on the plasma chemistry of amorphous silicon-based materials * Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced * Features an international group of contributors * Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices.

Silicon-Based Detectors at the HL-LHC

CERN Document Server

Hartmann, Frank

2018-01-01

This document discusses the silicon-based detectors planned for the High Luminosity LHC. The special aspects to cope with the new environment and its challenges, e.g. very high radiation levels and very high instantaneous luminosity thus high pile-up, high occupancy and high data rates, are addressed. The different design choices of the detectors are put into perspective. Exciting topics like trackers, high granularity silicon-based calorimetry with novel 8~inch processing, fast timing and new triggers are described.

Ultrafast THz saturable absorption in doped semiconductors at room temperature

DEFF Research Database (Denmark)

Turchinovich, Dmitry; Hoffmann, M. V.

2011-01-01

Ultrafast Phenomena XVII presents the latest advances in ultrafast science, including both ultrafast optical technology and the study of ultrafast phenomena. It covers picosecond, femtosecond and attosecond processes relevant to applications in physics, chemistry, biology, and engineering. Ultraf...

Silicon-photonic interferometric biosensor using active phase demodulation

Science.gov (United States)

Marin, Y.; Toccafondo, V.; Velha, P.; Scarano, S.; Tirelli, S.; Nottola, A.; Jeong, Y.; Jeon, H. P.; Minunni, M.; Di Pasquale, F.; Oton, C. J.

2018-02-01

Silicon photonics is becoming a consolidated technology, mainly in the telecom/datacom sector, but with a great potential in the chemical and biomedical sensor market too, mainly due to its CMOS compatibility, which allows massfabrication of huge numbers of miniaturized devices at a very low cost per chip. Integrated photonic sensors, typically based on resonators, interferometers, or periodic structures, are easy to multiplex as the light is confined in optical waveguides. In this work, we present a silicon-photonic sensor capable of measuring refractive index and chemical binding of biomolecules on the surface, using a low-cost phase interrogation scheme. The sensor consists of a pair of balanced Mach-Zehnder interferometers with interaction lengths of 2.5 mm and 22 mm, wound to a sensing area of only 500 μm x500 μm. The phase interrogation is performed with a fixed laser and an active phase demodulation approach based on a phase generated carrier (PGC) technique using a phase demodulator integrated within the chip. No laser tuning is required, and the technique can extract the univocal phase value with no sensitivity fading. The detection only requires a photo-receiver per interferometer, analog-to-digital conversion, and simple processing performed in real-time. We present repeatable and linear refractive index measurements, with a detection limit down to 4.7·10-7 RIU. We also present sensing results on a chemically-functionalized sample, where anti-BSA to BSA (bovine serum albumin) binding curves are clearly visible for concentrations down to 5 ppm. Considering the advantages of silicon photonics, this device has great potential over several applications in the chemical/biochemical sensing industry.

Tracing the pH dependent activation of autophagy in cancer cells by silicon nanowire-based impedance biosensor.

Science.gov (United States)

Alikhani, Alireza; Gharooni, Milad; Abiri, Hamed; Farokhmanesh, Fatemeh; Abdolahad, Mohammad

2018-05-30

Monitoring the pH dependent behavior of normal and cancer cells by impedimetric biosensor based on Silicon Nanowires (SiNWs) was introduced to diagnose the invasive cancer cells. Autophagy as a biologically activated process in invasive cancer cells during acidosis, protect them from apoptosis in lower pH which presented in our work. As the autophagy is the only activated pathways which can maintain cellular proliferation in acidic media, responses of SiNW-ECIS in acidified cells could be correlated to the probability of autophagy activation in normal or cancer cells. In contrast, cell survival pathway wasn't activated in low-grade cancer cells which resulted in their acidosis. The measured electrical resistance of MCF10, MCF7, and MDA-MB468 cell lines, by SiNW sensor, in normal and acidic media were matched by the biological analyses of their vital functions. Invasive cancer cells exhibited increased electrical resistance in pH 6.5 meanwhile the two other types of the breast cells exhibited sharp (MCF10) and moderate (MCF7) decrease in their resistance. This procedure would be a new trend in microenvironment based cancer investigation. Copyright © 2018 Elsevier B.V. All rights reserved.

Surface wave photonic device based on porous silicon multilayers

International Nuclear Information System (INIS)

Guillermain, E.; Lysenko, V.; Benyattou, T.

2006-01-01

Porous silicon is widely studied in the field of photonics due to its interesting optical properties. In this work, we present theoretical and first experimental studies of a new kind of porous silicon photonic device based on optical surface wave. A theoretical analysis of the device is presented using plane-wave approximation. The porous silicon multilayered structures are realized using electrochemical etching of p + -type silicon. Morphological and optical characterizations of the realized structures are reported

Laser-beam-induced current mapping evaluation of porous silicon-based passivation in polycrystalline silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Rabha, M. Ben; Bessais, B. [Laboratoire de Nanomateriaux et des Systemes pour l' Energie, Centre de Recherches et des Technologies de l' Energie - Technopole de Borj-Cedria BP 95, 2050 Hammam-Lif (Tunisia); Dimassi, W.; Bouaicha, M.; Ezzaouia, H. [Laboratoire de photovoltaique, des semiconducteurs et des nanostructures, Centre de Recherches et des Technologies de l' Energie - Technopole de Borj-Cedria BP 95, 2050 Hammam-Lif (Tunisia)

2009-05-15

In the present work, we report on the effect of introducing a superficial porous silicon (PS) layer on the performance of polycrystalline silicon (pc-Si) solar cells. Laser-beam-induced current (LBIC) mapping shows that the PS treatment on the emitter of pc-Si solar cells improves their quantum response and reduce the grain boundaries (GBs) activity. After the porous silicon treatment, mapping investigation shows an enhancement of the LBIC and the internal quantum efficiency (IQE), due to an improvement of the minority carrier diffusion length and the passivation of recombination centers at the GBs as compared to the reference substrate. It was quantitatively shown that porous silicon treatment can passivate both the grains and GBs. (author)

Electrically-driven GHz range ultrafast graphene light emitter (Conference Presentation)

Science.gov (United States)

Kim, Youngduck; Gao, Yuanda; Shiue, Ren-Jye; Wang, Lei; Aslan, Ozgur Burak; Kim, Hyungsik; Nemilentsau, Andrei M.; Low, Tony; Taniguchi, Takashi; Watanabe, Kenji; Bae, Myung-Ho; Heinz, Tony F.; Englund, Dirk R.; Hone, James

2017-02-01

Ultrafast electrically driven light emitter is a critical component in the development of the high bandwidth free-space and on-chip optical communications. Traditional semiconductor based light sources for integration to photonic platform have therefore been heavily studied over the past decades. However, there are still challenges such as absence of monolithic on-chip light sources with high bandwidth density, large-scale integration, low-cost, small foot print, and complementary metal-oxide-semiconductor (CMOS) technology compatibility. Here, we demonstrate the first electrically driven ultrafast graphene light emitter that operate up to 10 GHz bandwidth and broadband range (400 1600 nm), which are possible due to the strong coupling of charge carriers in graphene and surface optical phonons in hBN allow the ultrafast energy and heat transfer. In addition, incorporation of atomically thin hexagonal boron nitride (hBN) encapsulation layers enable the stable and practical high performance even under the ambient condition. Therefore, electrically driven ultrafast graphene light emitters paves the way towards the realization of ultrahigh bandwidth density photonic integrated circuits and efficient optical communications networks.

Development of Scanning Ultrafast Electron Microscope Capability.

Energy Technology Data Exchange (ETDEWEB)

Collins, Kimberlee Chiyoko [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Talin, Albert Alec [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Chandler, David W. [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Michael, Joseph R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2016-11-01

Modern semiconductor devices rely on the transport of minority charge carriers. Direct examination of minority carrier lifetimes in real devices with nanometer-scale features requires a measurement method with simultaneously high spatial and temporal resolutions. Achieving nanometer spatial resolutions at sub-nanosecond temporal resolution is possible with pump-probe methods that utilize electrons as probes. Recently, a stroboscopic scanning electron microscope was developed at Caltech, and used to study carrier transport across a Si p-n junction [ 1 , 2 , 3 ] . In this report, we detail our development of a prototype scanning ultrafast electron microscope system at Sandia National Laboratories based on the original Caltech design. This effort represents Sandia's first exploration into ultrafast electron microscopy.

Durable crystalline Si photovoltaic modules based on silicone-sheet encapsulants

Science.gov (United States)

Hara, Kohjiro; Ohwada, Hiroto; Furihata, Tomoyoshi; Masuda, Atsushi

2018-02-01

Crystalline Si photovoltaic (PV) modules were fabricated with sheets of poly(dimethylsiloxane) (silicone) as an encapsulant. The long-term durability of the silicone-encapsulated PV modules was experimentally investigated. The silicone-based modules enhanced the long-term durability against potential-induced degradation (PID) and a damp-heat (DH) condition at 85 °C with 85% relative humidity (RH). In addition, we designed and fabricated substrate-type Si PV modules based on the silicone encapsulant and an Al-alloy plate as the substratum, which demonstrated high impact resistance and high incombustible performance. The high chemical stability, high volume resistivity, rubber-like elasticity, and incombustibility of the silicone encapsulant resulted in the high durability of the modules. Our results indicate that silicone is an attractive encapsulation material, as it improves the long-term durability of crystalline Si PV modules.

Development of a high brightness ultrafast Transmission Electron Microscope based on a laser-driven cold field emission source.

Science.gov (United States)

Houdellier, F; Caruso, G M; Weber, S; Kociak, M; Arbouet, A

2018-03-01

We report on the development of an ultrafast Transmission Electron Microscope based on a cold field emission source which can operate in either DC or ultrafast mode. Electron emission from a tungsten nanotip is triggered by femtosecond laser pulses which are tightly focused by optical components integrated inside a cold field emission source close to the cathode. The properties of the electron probe (brightness, angular current density, stability) are quantitatively determined. The measured brightness is the largest reported so far for UTEMs. Examples of imaging, diffraction and spectroscopy using ultrashort electron pulses are given. Finally, the potential of this instrument is illustrated by performing electron holography in the off-axis configuration using ultrashort electron pulses. Copyright © 2017 Elsevier B.V. All rights reserved.

Ultrafast Optical Modulation of Second- and Third-Harmonic Generation from Cut-Disk-Based Metasurfaces

KAUST Repository

Sartorello, Giovanni

2016-06-06

We design and fabricate a metasurface composed of gold cut-disk resonators that exhibits a strong coherent nonlinear response. We experimentally demonstrate all-optical modulation of both second- and third-harmonic signals on a subpicosecond time scale. Pump-probe experiments and numerical models show that the observed effects are due to the ultrafast response of the electronic excitations in the metal under external illumination. These effects pave the way for the development of novel active nonlinear metasurfaces with controllable and switchable coherent nonlinear response. © 2016 American Chemical Society.

Si-H bond dynamics in hydrogenated amorphous silicon

Science.gov (United States)

Scharff, R. Jason; McGrane, Shawn D.

2007-08-01

The ultrafast structural dynamics of the Si-H bond in the rigid solvent environment of an amorphous silicon thin film is investigated using two-dimensional infrared four-wave mixing techniques. The two-dimensional infrared (2DIR) vibrational correlation spectrum resolves the homogeneous line shapes ( 4ps waiting times. The Si-H stretching mode anharmonic shift is determined to be 84cm-1 and decreases slightly with vibrational frequency. The 1→2 linewidth increases with vibrational frequency. Frequency dependent vibrational population times measured by transient grating spectroscopy are also reported. The narrow homogeneous line shape, large inhomogeneous broadening, and lack of spectral diffusion reported here present the ideal backdrop for using a 2DIR probe following electronic pumping to measure the transient structural dynamics implicated in the Staebler-Wronski degradation [Appl. Phys. Lett. 31, 292 (1977)] in a-Si:H based solar cells.

Ultrafast Gain Dynamics in Quantum Dot Amplifiers: Theoretical Analysis and Experimental Investigations

DEFF Research Database (Denmark)

Poel, Mike van der; Gehrig, Edeltraud; Hess, Ortwin

2005-01-01

Ultrafast gain dynamics in an optical amplifier with an active layer of self-organized quantum dots (QDs) emitting near 1.3$muhbox m$is characterized experimentally in a pump-probe experiment and modeled theoretically on the basis of QD Maxwell–Bloch equations. Experiment and theory are in good......$factor) is theoretically predicted and demonstrated in the experiments. The fundamental analysis reveals the underlying physical processes and indicates limitations to QD-based devices....

Ultrafast laser spectroscopy in complex solid state materials

Energy Technology Data Exchange (ETDEWEB)

Li, Tianqi [Iowa State Univ., Ames, IA (United States)

2014-12-01

This thesis summarizes my work on applying the ultrafast laser spectroscopy to the complex solid state materials. It shows that the ultrafast laser pulse can coherently control the material properties in the femtosecond time scale. And the ultrafast laser spectroscopy can be employed as a dynamical method for revealing the fundamental physical problems in the complex material systems.

Defect evolution and dopant activation in laser annealed Si and Ge

DEFF Research Database (Denmark)

Cristiano, F.; Shayesteh, M.; Duffy, R.

2016-01-01

Defect evolution and dopant activation are intimately related to the use of ion implantation and annealing, traditionally used to dope semiconductors during device fabrication. Ultra-fast laser thermal annealing (LTA) is one of the most promising solutions for the achievement of abrupt and highly...... doped junctions. In this paper, we report some recent investigations focused on this annealing method, with particular emphasis on the investigation of the formation and evolution of implant/anneal induced defects and their impact on dopant activation. In the case of laser annealed Silicon, we show...

Ultrafast quantum random number generation based on quantum phase fluctuations.

Science.gov (United States)

Xu, Feihu; Qi, Bing; Ma, Xiongfeng; Xu, He; Zheng, Haoxuan; Lo, Hoi-Kwong

2012-05-21

A quantum random number generator (QRNG) can generate true randomness by exploiting the fundamental indeterminism of quantum mechanics. Most approaches to QRNG employ single-photon detection technologies and are limited in speed. Here, we experimentally demonstrate an ultrafast QRNG at a rate over 6 Gbits/s based on the quantum phase fluctuations of a laser operating near threshold. Moreover, we consider a potential adversary who has partial knowledge on the raw data and discuss how one can rigorously remove such partial knowledge with postprocessing. We quantify the quantum randomness through min-entropy by modeling our system and employ two randomness extractors--Trevisan's extractor and Toeplitz-hashing--to distill the randomness, which is information-theoretically provable. The simplicity and high-speed of our experimental setup show the feasibility of a robust, low-cost, high-speed QRNG.

Mesoporous Silicon-Based Anodes for High Capacity, High Performance Li-ion Batteries, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo one-dimensional phase, the active anode...

Study of the properties of silicon-based semiconductor converters for betavoltaic cells

International Nuclear Information System (INIS)

Polikarpov, M. A.; Yakimov, E. B.

2015-01-01

Silicon p-i-n diodes are studied in a scanning electron microscope under conditions simulating the β-radiation from a radioactive Ni 63 source with an activity of 10 mCi/cm 2 . The attainable parameters of β-voltaic cells with a source of this kind and a silicon-based converter of β-particle energy to electric current are estimated. It is shown that the power of elements of this kind can reach values of ∼10 nW/cm 2 even for a cell with an area of one centimeter, which is rather close to the calculated value

Waveguide cores containing silicon nanocrystals as active spectral filters for silicon-based photonics

Czech Academy of Sciences Publication Activity Database

Pelant, Ivan; Ostatnický, T.; Valenta, J.; Luterová, Kateřina; Skopalová, Eva; Mates, Tomáš; Elliman, R. G.

2006-01-01

Roč. 83, - (2006), s. 87-91 ISSN 0946-2171 R&D Projects: GA ČR(CZ) GA202/03/0789; GA ČR(CZ) GP202/01/D030; GA AV ČR(CZ) IAA1010316; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : silicon nanocrystals * planar waveguides * leaky modes Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.023, year: 2006

All-optical devices for ultrafast packet switching

DEFF Research Database (Denmark)

Dorren, H.J.S.; HerreraDorren, J.; Raz, O.

2007-01-01

We discuss integrated devices for all-optical packet switching. We focus on monolithically integrated all-optical flip-flops, ultra-fast semiconductor based wavelength converters and explain the operation principles. Finally, a 160 Gb/s all-optical packet switching experiment over 110 km of field...

Ultrafast molecular dynamics illuminated with synchrotron radiation

International Nuclear Information System (INIS)

Bozek, John D.; Miron, Catalin

2015-01-01

Highlights: • Ultrafast molecular dynamics probed with synchrotron radiation. • Core-excitation as probe of ultrafast dynamics through core-hole lifetime. • Review of experimental and theoretical methods in ultrafast dynamics using core-level excitation. - Abstract: Synchrotron radiation is a powerful tool for studying molecular dynamics in small molecules in spite of the absence of natural matching between the X-ray pulse duration and the time scale of nuclear motion. Promoting core level electrons to unoccupied molecular orbitals simultaneously initiates two ultrafast processes, nuclear dynamics on the potential energy surfaces of the highly excited neutral intermediate state of the molecule on the one hand and an ultrafast electronic decay of the intermediate excited state to a cationic final state, characterized by a core hole lifetime. The similar time scales of these processes enable core excited pump-probe-type experiments to be performed with long duration X-ray pulses from a synchrotron source. Recent results obtained at the PLIEADES beamline concerning ultrafast dissociation of core excited states and molecular potential energy curve mapping facilitated by changes in the geometry of the short-lived intermediate core excited state are reviewed. High brightness X-ray beams combined with state-of-the art electron and ion-electron coincidence spectrometers and highly sophisticated theoretical methods are required to conduct these experiments and to achieve a full understanding of the experimental results.

Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

DEFF Research Database (Denmark)

Berg, Tommy Winther; Bischoff, Svend; Magnúsdóttir, Ingibjörg

2001-01-01

Measurements of ultrafast gain recovery in self-assembled InAs quantum-dot (QD) amplifiers are explained by a comprehensive numerical model. The on excited state carriers are found to act as a reservoir for the optically active ground state carriers resulting in an ultrafast gain recovery as long...... as the excited state is well populated. However, when pulses are injected into the device at high-repetition frequencies, the response of a on amplifier is found to be limited by the wetting-layer dynamics....

Advanced ultrafast fiber laser sources enabled by fiber nonlinearities

Energy Technology Data Exchange (ETDEWEB)

Liu, Wei

2017-05-15

Development of high power/energy ultrafast fiber lasers for scientific research and industrial applications is one of the most exciting fields in ultrafast optics. This thesis demonstrated new means to improve two essential properties - which are indispensable for novel applications such as high-harmonic generation (HHG) and multiphoton microscopy (MPM) - of an ultrafast fiber laser system: energy scaling capability and wavelength tunability. High photon-flux extreme ultraviolet sources enabled by HHG desire high power (>100 W), high repetition-rate (>1 MHz) ultrafast driving laser sources. We have constructed from scratch a high-power Yb-fiber laser system using the well-known chirped-pulse amplification (CPA) technique. Such a CPA system capable of producing ∝200-W average power consists of a monolithic Yb-fiber oscillator, an all-fiber stretcher, a pre-amplifier chain, a main amplifier constructed from rode-type large pitch fiber, and a diffraction-grating based compressor. To increase the HHG efficiency, ultrafast pulses with duration <60 fs are highly desired. We proposed and demonstrated a novel amplification technique, named as pre-chirp managed amplification (PCMA). We successfully constructed an Yb-fiber based PCMA system that outputs 75-MHz spectrally broadened pulses with >130-W average power. The amplified pulses are compressed to 60-fs pulses with 100-W average power, constituting a suitable HHG driving source. MPM is a powerful biomedical imaging tool, featuring larger penetration depth while providing the capability of optical sectioning. Although femtosecond solid-state lasers have been widely accepted as the standard option as MPM driving sources, fiber-based sources have received growing research efforts due to their superior performance. In the second part of this thesis, we both theoretically and experimentally demonstrated a new method of producing wavelength widely tunable femtosecond pulses for driving MPM. We employed self-phase modulation

Silicon-based metallic micro grid for electron field emission

International Nuclear Information System (INIS)

Kim, Jaehong; Jeon, Seok-Gy; Kim, Jung-Il; Kim, Geun-Ju; Heo, Duchang; Shin, Dong Hoon; Sun, Yuning; Lee, Cheol Jin

2012-01-01

A micro-scale metal grid based on a silicon frame for application to electron field emission devices is introduced and experimentally demonstrated. A silicon lattice containing aperture holes with an area of 80 × 80 µm 2 and a thickness of 10 µm is precisely manufactured by dry etching the silicon on one side of a double-polished silicon wafer and by wet etching the opposite side. Because a silicon lattice is more rigid than a pure metal lattice, a thin layer of Au/Ti deposited on the silicon lattice for voltage application can be more resistant to the geometric stress caused by the applied electric field. The micro-fabrication process, the images of the fabricated grid with 88% geometric transparency and the surface profile measurement after thermal feasibility testing up to 700 °C are presented. (paper)

Ultrafast terahertz electrodynamics of photonic and electronic nanostructures

Energy Technology Data Exchange (ETDEWEB)

Luo, Liang [Iowa State Univ., Ames, IA (United States)

2015-01-01

This thesis summarizes my work on using ultrafast laser pulses to study Terahertz (THz) electrodynamics of photonic and electronic nanostructures and microstructures. Ultrafast timeresolved (optical, NIR, MIR, THz) pump-probe spectroscopy setup has been successfully built, which enables me to perform a series of relevant experiments. Firstly, a novel high e ciency and compact THz wave emitter based on split-ring-resonators has been developed and characterized. The emitter can be pumped at any wavelength by tailoring the magnetic resonance and could generate gapless THz waves covering the entire THz band. Secondly, two kinds of new photonic structures for THz wave manipulation have been successfully designed and characterized. One is based on the 1D and 2D photo-imprinted di ractive elements. The other is based on the photoexcited double-split-ring-resonator metamaterials. Both structures are exible and can modulate THz waves with large tunability. Thirdly, the dark excitons in semiconducting singlewalled carbon nanotubes are studied by optical pump and THz probe spectroscopy, which provides the rst insights into the THz responses of nonequilibrium excitonic correlations and dynamics from the dark ground states in carbon nanotubes. Next, several on-going projects are brie y presented such as the study of ultrafast THz dynamics of Dirac fermions in topological insulator Bi₂Se₃ with Mid-infrared excitation. Finally, the thesis ends with a summary of the completed experiments and an outlook of the future plan.

Advanced ultrafast fiber laser sources enabled by fiber nonlinearities

International Nuclear Information System (INIS)

Liu, Wei

2017-05-01

Development of high power/energy ultrafast fiber lasers for scientific research and industrial applications is one of the most exciting fields in ultrafast optics. This thesis demonstrated new means to improve two essential properties - which are indispensable for novel applications such as high-harmonic generation (HHG) and multiphoton microscopy (MPM) - of an ultrafast fiber laser system: energy scaling capability and wavelength tunability. High photon-flux extreme ultraviolet sources enabled by HHG desire high power (>100 W), high repetition-rate (>1 MHz) ultrafast driving laser sources. We have constructed from scratch a high-power Yb-fiber laser system using the well-known chirped-pulse amplification (CPA) technique. Such a CPA system capable of producing ∝200-W average power consists of a monolithic Yb-fiber oscillator, an all-fiber stretcher, a pre-amplifier chain, a main amplifier constructed from rode-type large pitch fiber, and a diffraction-grating based compressor. To increase the HHG efficiency, ultrafast pulses with duration 130-W average power. The amplified pulses are compressed to 60-fs pulses with 100-W average power, constituting a suitable HHG driving source. MPM is a powerful biomedical imaging tool, featuring larger penetration depth while providing the capability of optical sectioning. Although femtosecond solid-state lasers have been widely accepted as the standard option as MPM driving sources, fiber-based sources have received growing research efforts due to their superior performance. In the second part of this thesis, we both theoretically and experimentally demonstrated a new method of producing wavelength widely tunable femtosecond pulses for driving MPM. We employed self-phase modulation to broaden a narrowband spectrum followed by bandpass filters to select the rightmost/leftmost spectral lobes. Widely tunable in 820-1225 nm, the resulting sources generated nearly transform-limited, ∝100 fs pulses. Using short fibers with large

Silicon oxide based high capacity anode materials for lithium ion batteries

Science.gov (United States)

Deng, Haixia; Han, Yongbong; Masarapu, Charan; Anguchamy, Yogesh Kumar; Lopez, Herman A.; Kumar, Sujeet

2017-03-21

Silicon oxide based materials, including composites with various electrical conductive compositions, are formulated into desirable anodes. The anodes can be effectively combined into lithium ion batteries with high capacity cathode materials. In some formulations, supplemental lithium can be used to stabilize cycling as well as to reduce effects of first cycle irreversible capacity loss. Batteries are described with surprisingly good cycling properties with good specific capacities with respect to both cathode active weights and anode active weights.

In-situ formation of nanoparticles within a silicon-based matrix

Science.gov (United States)

Thoma, Steven G [Albuquerque, NM; Wilcoxon, Jess P [Albuquerque, NM; Abrams, Billie L [Albuquerque, NM

2008-06-10

A method for encapsulating nanoparticles with an encapsulating matrix that minimizes aggregation and maintains favorable properties of the nanoparticles. The matrix comprises silicon-based network-forming compounds such as ormosils and polysiloxanes. The nanoparticles are synthesized from precursors directly within the silicon-based matrix.

Charge dynamics in aluminum oxide thin film studied by ultrafast scanning electron microscopy.

Science.gov (United States)

Zani, Maurizio; Sala, Vittorio; Irde, Gabriele; Pietralunga, Silvia Maria; Manzoni, Cristian; Cerullo, Giulio; Lanzani, Guglielmo; Tagliaferri, Alberto

2018-04-01

The excitation dynamics of defects in insulators plays a central role in a variety of fields from Electronics and Photonics to Quantum computing. We report here a time-resolved measurement of electron dynamics in 100 nm film of aluminum oxide on silicon by Ultrafast Scanning Electron Microscopy (USEM). In our pump-probe setup, an UV femtosecond laser excitation pulse and a delayed picosecond electron probe pulse are spatially overlapped on the sample, triggering Secondary Electrons (SE) emission to the detector. The zero of the pump-probe delay and the time resolution were determined by measuring the dynamics of laser-induced SE contrast on silicon. We observed fast dynamics with components ranging from tens of picoseconds to few nanoseconds, that fits within the timescales typical of the UV color center evolution. The surface sensitivity of SE detection gives to the USEM the potential of applying pump-probe investigations to charge dynamics at surfaces and interfaces of current nano-devices. The present work demonstrates this approach on large gap insulator surfaces. Copyright © 2018 Elsevier B.V. All rights reserved.

A silicon-based electrical source for surface plasmon polaritons

NARCIS (Netherlands)

Walters, Robert J.; van Loon, Rob V.A.; Brunets, I.; Schmitz, Jurriaan; Polman, Albert

2009-01-01

This work demonstrates the fabrication of a silicon-based electrical source for surface plasmon polaritons (SPPs) at low temperatures using silicon nanocrystal doped alumina within a metal-insulator-metal (MIM) waveguide geometry. The fabrication method uses established microtechnology processes

Ultrafast photocurrents in monolayer MoS2

Science.gov (United States)

Parzinger, Eric; Wurstbauer, Ursula; Holleitner, Alexander W.

Two-dimensional transition metal dichalcogenides such as MoS2 have emerged as interesting materials for optoelectronic devices. In particular, the ultrafast dynamics and lifetimes of photoexcited charge carriers have attracted great interest during the last years. We investigate the photocurrent response of monolayer MoS2 on a picosecond time scale utilizing a recently developed pump-probe spectroscopy technique based on coplanar striplines. We discuss the ultrafast dynamics within MoS2 including photo-thermoelectric currents and the impact of built-in fields due to Schottky barriers as well as the Fermi level pinning at the contact region. We acknowledge support by the ERC via Project 'NanoREAL', the DFG via excellence cluster 'Nanosystems Initiative Munich' (NIM), and through the TUM International Graduate School of Science and Engineering (IGSSE) and BaCaTeC.

Production of high specific activity silicon-32

International Nuclear Information System (INIS)

Phillips, D.R.; Brzezinski, M.A.

1998-01-01

This is the final report of a three-year, Laboratory Directed Research and Development Project (LDRD) at Los Alamos National Laboratory (LANL). There were two primary objectives for the work performed under this project. The first was to take advantage of capabilities and facilities at Los Alamos to produce the radionuclide 32 Si in unusually high specific activity. The second was to combine the radioanalytical expertise at Los Alamos with the expertise at the University of California to develop methods for the application of 32 Si in biological oceanographic research related to global climate modeling. The first objective was met by developing targetry for proton spallation production of 32 Si in KCl targets and chemistry for its recovery in very high specific activity. The second objective was met by developing a validated field-useable, radioanalytical technique, based upon gas-flow proportional counting, to measure the dynamics of silicon uptake by naturally occurring diatoms

Porous silicon-based passivation and gettering in polycrystalline silicon solar cells

International Nuclear Information System (INIS)

Dimassi, W.; Bouaiecha, M.; Saadoun, M.; Bessaies, B.; Ezzaouia, H.; Bennaceur, R.

2002-01-01

In this work, we report on the effect of introducing a superficial porous silicon (PS) layer on the electrical characteristics of polycrystalline silicon solar cells. The PS layer was formed using a vapour etching (VE)-based method. In addition to its known anti-reflecting action, the forming hydrogen-rich PS layer acts as a passivating agent for the surface of the cell. As a result we found an improvement of the I-V characteristics in dark conditions and AM1 illumination. We show that when the formation of a superficial PS layer is followed by a heat treatment, gettering of impurities from the polycrystalline silicon material is possible. After the removal of the PS layer and the formation of the photovoltaic (PV) structure, we observed an increase of the light-beam-induced-current (LBIC) for treatment temperatures not exceeding 900 deg. C. An improvement of the bulk minority carrier diffusion length and the grain boundary (GB) recombination velocity were observed as the temperature rises, although a global decrease of the LBIC current was observed for temperatures greater than 900 deg. C

Mapping Local Cytosolic Enzymatic Activity in Human Esophageal Mucosa with Porous Silicon Nanoneedles.

Science.gov (United States)

Chiappini, Ciro; Campagnolo, Paola; Almeida, Carina S; Abbassi-Ghadi, Nima; Chow, Lesley W; Hanna, George B; Stevens, Molly M

2015-09-16

Porous silicon nanoneedles can map Cathepsin B activity across normal and tumor human esophageal mucosa. Assembling a peptide-based Cathepsin B cleavable sensor over a large array of nano-needles allows the discrimination of cancer cells from healthy ones in mixed culture. The same sensor applied to tissue can map Cathepsin B activity with high resolution across the tumor margin area of esophageal adenocarcinoma. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A phononic crystal strip based on silicon for support tether applications in silicon-based MEMS resonators and effects of temperature and dopant on its band gap characteristics

Directory of Open Access Journals (Sweden)

Thi Dep Ha

2016-04-01

Full Text Available Phononic crystals (PnCs and n-type doped silicon technique have been widely employed in silicon-based MEMS resonators to obtain high quality factor (Q as well as temperature-induced frequency stability. For the PnCs, their band gaps play an important role in the acoustic wave propagation. Also, the temperature and dopant doped into silicon can cause the change in its material properties such as elastic constants, Young’s modulus. Therefore, in order to design the simultaneous high Q and frequency stability silicon-based MEMS resonators by two these techniques, a careful design should study effects of temperature and dopant on the band gap characteristics to examine the acoustic wave propagation in the PnC. Based on these, this paper presents (1 a proposed silicon-based PnC strip structure for support tether applications in low frequency silicon-based MEMS resonators, (2 influences of temperature and dopant on band gap characteristics of the PnC strips. The simulation results show that the largest band gap can achieve up to 33.56 at 57.59 MHz and increase 1280.13 % (also increase 131.89 % for ratio of the widest gaps compared with the counterpart without hole. The band gap properties of the PnC strips is insignificantly effected by temperature and electron doping concentration. Also, the quality factor of two designed length extensional mode MEMS resonators with proposed PnC strip based support tethers is up to 1084.59% and 43846.36% over the same resonators with PnC strip without hole and circled corners, respectively. This theoretical study uses the finite element analysis in COMSOL Multiphysics and MATLAB softwares as simulation tools. This findings provides a background in combination of PnC and dopant techniques for high performance silicon-based MEMS resonators as well as PnC-based MEMS devices.

A phononic crystal strip based on silicon for support tether applications in silicon-based MEMS resonators and effects of temperature and dopant on its band gap characteristics

Energy Technology Data Exchange (ETDEWEB)

Ha, Thi Dep, E-mail: hathidep@yahoo.com [School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731 (China); Faculty of Electronic Technology, Industrial University of Ho Chi Minh City, Hochiminh City (Viet Nam); Bao, JingFu, E-mail: baojingfu@uestc.edu.cn [School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731 (China)

2016-04-15

Phononic crystals (PnCs) and n-type doped silicon technique have been widely employed in silicon-based MEMS resonators to obtain high quality factor (Q) as well as temperature-induced frequency stability. For the PnCs, their band gaps play an important role in the acoustic wave propagation. Also, the temperature and dopant doped into silicon can cause the change in its material properties such as elastic constants, Young’s modulus. Therefore, in order to design the simultaneous high Q and frequency stability silicon-based MEMS resonators by two these techniques, a careful design should study effects of temperature and dopant on the band gap characteristics to examine the acoustic wave propagation in the PnC. Based on these, this paper presents (1) a proposed silicon-based PnC strip structure for support tether applications in low frequency silicon-based MEMS resonators, (2) influences of temperature and dopant on band gap characteristics of the PnC strips. The simulation results show that the largest band gap can achieve up to 33.56 at 57.59 MHz and increase 1280.13 % (also increase 131.89 % for ratio of the widest gaps) compared with the counterpart without hole. The band gap properties of the PnC strips is insignificantly effected by temperature and electron doping concentration. Also, the quality factor of two designed length extensional mode MEMS resonators with proposed PnC strip based support tethers is up to 1084.59% and 43846.36% over the same resonators with PnC strip without hole and circled corners, respectively. This theoretical study uses the finite element analysis in COMSOL Multiphysics and MATLAB softwares as simulation tools. This findings provides a background in combination of PnC and dopant techniques for high performance silicon-based MEMS resonators as well as PnC-based MEMS devices.

Determination of phosphorus in semiconductor grade silicon by neutron activation analysis

International Nuclear Information System (INIS)

Jaskolska, H.; Rowinska, L.

1975-01-01

A method of determination of phosphorus in silicon has been elaborated. The separation of phosphorus is based on the extraction of phosphomolybdic complex in the presence of hold-back carriers of Ta and Au. Contamination factors for various impurities were determined. The lower limit of determination equals 3.10 -11 g P. Types of errors in the determination of concentration profiles are discussed. The method meets the following requirements: 1./ It ensures good separation of phosphorus from elements occuring in silicon plates (i.e. Ta, Au, Sn, Ge, Ce, Sb, As, Cu, and Na). 2./ It ensures high chemical yield of phosphorus separation. 3./ It ensures high efficiency of the measurement of 32 P β-activity. 4./ It is simple and rapid, since, for the determination of a implantation profile, it is necessary to analyse several tens of layers. (T.G.)

Ultra-fast repair of single-strand breaks in DNA of. gamma. -irradiated Chinese hamster cells

Energy Technology Data Exchange (ETDEWEB)

Leontjeva, G A; Mantzighin, Yu A; Gaziev, A I [AN SSSR, Pushchino-na-Oke. Inst. Biologicheskoj Fiziki

1976-12-01

Studies of the effect of thermal treatment of Chinese hamster cells on sedimentation of DNA in the alkaline sucrose gradient showed that heating the cells to 68/sup 0/C for 15 min caused the same degradation as ..gamma..-irradiation with 5 to 7 krad at 37/sup 0/C. The inhibition of cellular repair enzymes by heating was therefore unacceptable. The process of ultra-fast repair is essentially determined by the DNA-ligase reaction, which is activated in the presence of Mg ions, and inhibited in mammalian cells in the presence of EDTA and pyrophosphate. Sedimentation profiles were therefore measured for the DNA of Chinese hamster cells ..gamma..-irradiated (5 krad) at 0/sup 0/C or 22/sup 0/C in the presence of Mg/sup + +/, or EDTA and pyrophosphate, and the results demonstrated ultra-fast repair only at 20 to 37/sup 0/C, in contrast to bacteria. A study was made of the temperature dependence of the activity of the DNA ligases isolated from E.coli and rabbit bone marrow. The NAD-dependent bacterial DNA ligase was active at temperatures from 0 to 40/sup 0/C, whereas ATP-dependent DNA ligase of mammals only showed activity in the range 15 to 40/sup 0/C. The differing temperature dependences of ultra-fast repair in bacterial and mammalian cells are in agreement with the temperature dependences of the activities of isolated enzymes, and the results suggest that the process of ultra-fast repair of single-strand breaks of DNA takes place in both bacterial and mammalian cells.

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

Science.gov (United States)

Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

2016-12-28

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

High-efficiency power transfer for silicon-based photonic devices

Science.gov (United States)

Son, Gyeongho; Yu, Kyoungsik

2018-02-01

We demonstrate an efficient coupling of guided light of 1550 nm from a standard single-mode optical fiber to a silicon waveguide using the finite-difference time-domain method and propose a fabrication method of tapered optical fibers for efficient power transfer to silicon-based photonic integrated circuits. Adiabatically-varying fiber core diameters with a small tapering angle can be obtained using the tube etching method with hydrofluoric acid and standard single-mode fibers covered by plastic jackets. The optical power transmission of the fundamental HE11 and TE-like modes between the fiber tapers and the inversely-tapered silicon waveguides was calculated with the finite-difference time-domain method to be more than 99% at a wavelength of 1550 nm. The proposed method for adiabatic fiber tapering can be applied in quantum optics, silicon-based photonic integrated circuits, and nanophotonics. Furthermore, efficient coupling within the telecommunication C-band is a promising approach for quantum networks in the future.

High rate particle tracking and ultra-fast timing with a thin hybrid silicon pixel detector

Science.gov (United States)

Fiorini, M.; Aglieri Rinella, G.; Carassiti, V.; Ceccucci, A.; Cortina Gil, E.; Cotta Ramusino, A.; Dellacasa, G.; Garbolino, S.; Jarron, P.; Kaplon, J.; Kluge, A.; Marchetto, F.; Mapelli, A.; Martin, E.; Mazza, G.; Morel, M.; Noy, M.; Nuessle, G.; Perktold, L.; Petagna, P.; Petrucci, F.; Poltorak, K.; Riedler, P.; Rivetti, A.; Statera, M.; Velghe, B.

2013-08-01

The Gigatracker (GTK) is a hybrid silicon pixel detector designed for the NA62 experiment at CERN. The beam spectrometer, made of three GTK stations, has to sustain high and non-uniform particle rate (∼ 1 GHz in total) and measure momentum and angles of each beam track with a combined time resolution of 150 ps. In order to reduce multiple scattering and hadronic interactions of beam particles, the material budget of a single GTK station has been fixed to 0.5% X0. The expected fluence for 100 days of running is 2 ×1014 1 MeV neq /cm2, comparable to the one foreseen in the inner trackers of LHC detectors during 10 years of operation. To comply with these requirements, an efficient and very low-mass (< 0.15 %X0) cooling system is being constructed, using a novel microchannel cooling silicon plate. Two complementary read-out architectures have been produced as small-scale prototypes: one is based on a Time-over-Threshold circuit followed by a TDC shared by a group of pixels, while the other makes use of a constant-fraction discriminator followed by an on-pixel TDC. The read-out ASICs are produced in 130 nm IBM CMOS technology and will be thinned down to 100 μm or less. An overview of the Gigatracker detector system will be presented. Experimental results from laboratory and beam tests of prototype bump-bonded assemblies will be described as well. These results show a time resolution of about 170 ps for single hits from minimum ionizing particles, using 200 μm thick silicon sensors.

Accelerator-based Single-shot Ultrafast Transmission Electron Microscope with Picosecond Temporal Resolution and Nanometer Spatial Resolution

OpenAIRE

Xiang, D.; Fu, F.; Zhang, J.; Huang, X.; Wang, L.; Wang, X.; Wan, W.

2014-01-01

We present feasibility study of an accelerator-based ultrafast transmission electron microscope (u-TEM) capable of producing a full field image in a single-shot with simultaneous picosecond temporal resolution and nanometer spatial resolution. We study key physics related to performance of u-TEMs, and discuss major challenges as well as possible solutions for practical realization of u-TEMs. The feasibility of u-TEMs is confirmed through simulations using realistic electron beam parameters. W...

Improvement of silicon direct bonding using surfaces activated by hydrogen plasma treatment

CERN Document Server

Choi, W B; Lee Jae Sik; Sung, M Y

2000-01-01

The plasma surface treatment, using hydrogen gas, of silicon wafers was studied as a pretreatment for silicon direct bonding. Chemical reactions of the hydrogen plasma with the surfaces were used for both surface activation and removal of surface contaminants. Exposure of the silicon wafers to the plasma formed an active oxide layer on the surface. This layer was hydrophilic. The surface roughness and morphology were examined as functions of the plasma exposure time and power. The surface became smoother with shorter plasma exposure time and lower power. In addition, the plasma surface treatment was very efficient in removing the carbon contaminants on the silicon surface. The value of the initial surface energy, as estimated by using the crack propagation method, was 506 mJ/M sup 2 , which was up to about three times higher than the value for the conventional direct bonding method using wet chemical treatments.

Fast determination of impurities in metallurgical grade silicon for photovoltaics by instrumental neutron activation analysis

International Nuclear Information System (INIS)

Hampel, J.; Boldt, F.M.; Gerstenberg, H.; Hampel, G.; Kratz, J.V.; Reber, S.; Wiehl, N.

2011-01-01

Standard wafer solar cells are made of near-semiconductor quality silicon. This high quality material makes up a significant part of the total costs of a solar module. Therefore, new concepts with less expensive so called solar grade silicon directly based on physiochemically upgraded metallurgical grade silicon are investigated. Metallurgical grade silicon contains large amounts of impurities, mainly transition metals like Fe, Cr, Mn, and Co, which degrade the minority carrier lifetime and thus the solar cell efficiency. A major reduction of the transition metal content occurs during the unidirectional crystallization due to the low segregation coefficient between the solid and liquid phase. A further reduction of the impurity level has to be done by gettering procedures applied to the silicon wafers. The efficiency of such cleaning procedures of metallurgical grade silicon is studied by instrumental neutron activation analysis (INAA). Small sized silicon wafers of approximately 200 mg with and without gettering step were analyzed. To accelerate the detection of transition metals in a crystallized silicon ingot, experiments of scanning whole vertical silicon columns with a diameter of approximately 1 cm by gamma spectroscopy were carried out. It was demonstrated that impurity profiles can be obtained in a comparably short time. Relatively constant transition metal ratios were found throughout an entire silicon ingot. This led to the conclusion that the determination of several metal profiles might be possible by the detection of only one 'leading element'. As the determination of Mn in silicon can be done quite fast compared to elements like Fe, Cr, and Co, it could be used as a rough marker for the overall metal concentration level. Thus, a fast way to determine impurities in photovoltaic silicon material is demonstrated. - Highlights: → We demonstrate a fast way to determine impurities in photovoltaic silicon by NAA. → We make first experiments of locally

Electroluminescence efficiencies of erbium in silicon-based hosts

Energy Technology Data Exchange (ETDEWEB)

Cueff, Sébastien, E-mail: sebastien-cueff@brown.edu, E-mail: christophe.labbe@ensicaen.fr [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS/CEA/Ensicaen/UCBN, Caen 14050 (France); School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Manel Ramírez, Joan; Berencén, Yonder; Garrido, Blas [MIND-IN2UB, Department Electrònica, Universitat de Barcelona, Martí i Franquès 1, Barcelona 08028 (Spain); Kurvits, Jonathan A.; Zia, Rashid [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Department of Physics, Brown University, Providence, Rhode Island 02912 (United States); Rizk, Richard; Labbé, Christophe, E-mail: sebastien-cueff@brown.edu, E-mail: christophe.labbe@ensicaen.fr [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS/CEA/Ensicaen/UCBN, Caen 14050 (France)

2013-11-04

We report on room-temperature 1.5 μm electroluminescence from trivalent erbium (Er{sup 3+}) ions embedded in three different CMOS-compatible silicon-based hosts: SiO{sub 2}, Si{sub 3}N{sub 4}, and SiN{sub x}. We show that although the insertion of either nitrogen or excess silicon helps enhance electrical conduction and reduce the onset voltage for electroluminescence, it drastically decreases the external quantum efficiency of Er{sup 3+} ions from 2% in SiO{sub 2} to 0.001% and 0.0004% in SiN{sub x} and Si{sub 3}N{sub 4}, respectively. Furthermore, we present strong evidence that hot carrier injection is significantly more efficient than defect-assisted conduction for the electrical excitation of Er{sup 3+} ions. These results suggest strategies to optimize the engineering of on-chip electrically excited silicon-based nanophotonic light sources.

SiC-Based Composite Materials Obtained by Siliconizing Carbon Matrices

Science.gov (United States)

Shikunov, S. L.; Kurlov, V. N.

2017-12-01

We have developed a method for fabrication of parts of complicated configuration from composite materials based on SiC ceramics, which employs the interaction of silicon melt with the carbon matrix having a certain composition and porosity. For elevating the operating temperatures of ceramic components, we have developed a method for depositing protective silicon-carbide coatings that is based on the interaction of the silicon melt and vapor with carbon obtained during thermal splitting of hydrocarbon molecules. The new structural ceramics are characterized by higher operating temperatures; chemical stability; mechanical strength; thermal shock, wear and radiation resistance; and parameters stability.

Graphene synthesized on porous silicon for active electrode material of supercapacitors

Science.gov (United States)

Su, B. B.; Chen, X. Y.; Halvorsen, E.

2016-11-01

We present graphene synthesized by chemical vapour deposition under atmospheric pressure on both porous nanostructures and flat wafers as electrode scaffolds for supercapacitors. A 3nm thin gold layer was deposited on samples of both porous and flat silicon for exploring the catalytic influence during graphene synthesis. Micro-four-point probe resistivity measurements revealed that the resistivity of porous silicon samples was nearly 53 times smaller than of the flat silicon ones when all the samples were covered by a thin gold layer after the graphene growth. From cyclic voltammetry, the average specific capacitance of porous silicon coated with gold was estimated to 267 μF/cm2 while that without catalyst layer was 145μF/cm2. We demonstrated that porous silicon based on nanorods can play an important role in graphene synthesis and enable silicon as promising electrodes for supercapacitors.

FPS-vidicon television camras for ultrafast-scan data acquisition

International Nuclear Information System (INIS)

Noel, B.W.; Yates, G.J.

1980-06-01

Two ultrafast-scan ( 500 TV lines per picture height with a corresponding dynamic range (to light input) of more than 100. The cameras use the unique properties of FPS vidicons and specially designed electronics to achieve their performance levels and versatility. The advantages and disadvantages of FPS vidicons and of antimony trisulfide and silicon target materials in such applications are discussed in detail. All of the electronics circuits are discussed. The sweep generator designs are treated at length because they are the key to the cameras' versatility. Emphasis is placed on remotely controllable analog and digital sweep generators. The latter is a complete CAMAC-compatible subsystem containing a 16-function master arithmetic logic unit. Pulsed and cw methods of obtaining transfer characteristics are described and compared. The effects of generation rates, tube types, and target types on the resolution, determined from contrast-transfer-function curves, are discussed. Several applications are described, including neutron TV pinhole, TREAT, and barium-release experiments

Annealing effects on recombinative activity of nickel at direct silicon bonded interface

International Nuclear Information System (INIS)

Kojima, Takuto; Ohshita, Yoshio; Yamaguchi, Masafumi

2015-01-01

By performing capacitance transient analyses, the recombination activity at a (110)/(100) direct silicon bonded (DSB) interface contaminated with nickel diffused at different temperatures, as a model of grain boundaries in multicrystalline silicon, was studied. The trap level depth from the valence band, trap density of states, and hole capture cross section peaked at an annealing temperature of 300 °C. At temperatures ⩾400 °C, the hole capture cross section increased with temperature, but the density of states remained unchanged. Further, synchrotron-based X-ray analyses, microprobe X-ray fluorescence (μ-XRF), and X-ray absorption near edge structure (XANES) analyses were performed. The analysis results indicated that the chemical phase after the sample was annealed at 200 °C was a mixture of NiO and NiSi 2

Hybrid Integrated Platforms for Silicon Photonics

Science.gov (United States)

Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

2010-01-01

A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

Double side multicrystalline silicon passivation by one step stain etching-based porous silicon

Energy Technology Data Exchange (ETDEWEB)

Mohamed, Seifeddine Belhadj; Ben Rabha, Mohamed; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

2012-10-15

In this paper, we investigate the effect of stain etching-based porous silicon on the double side multicrystalline silicon. Special attention is given to the use of the stain etched PS as an antireflection coating as well as for surface passivating capabilities. Stain etching of double side multicrystalline silicon leads to the formation of PS nanostructures, that dramatically decrease the surface reflectivity from 30% to about 7% and increase the effective lifetime from 1 {mu}s to 10 {mu}s at a minority carrier density ({Delta}n) of 10{sup 15} cm{sup -3}. These results let us correlate the rise of the lifetime values to the photoluminescence intensity to the hydrogen and oxide passivation as shown by FTIR analysis. This low-cost PS formation process can be applied in the photovoltaic cell technology as a standard procedure (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

Science.gov (United States)

Lee, Kwang Hong; Bao, Shuyu; Wang, Yue; Fitzgerald, Eugene A.; Seng Tan, Chuan

2018-01-01

The material properties and bonding behavior of silane-based silicon oxide layers deposited by plasma-enhanced chemical vapor deposition were investigated. Fourier transform infrared spectroscopy was employed to determine the chemical composition of the silicon oxide films. The incorporation of hydroxyl (-OH) groups and moisture absorption demonstrates a strong correlation with the storage duration for both as-deposited and annealed silicon oxide films. It is observed that moisture absorption is prevalent in the silane-based silicon oxide film due to its porous nature. The incorporation of -OH groups and moisture absorption in the silicon oxide films increase with the storage time (even in clean-room environments) for both as-deposited and annealed silicon oxide films. Due to silanol condensation and silicon oxidation reactions that take place at the bonding interface and in the bulk silicon, hydrogen (a byproduct of these reactions) is released and diffused towards the bonding interface. The trapped hydrogen forms voids over time. Additionally, the absorbed moisture could evaporate during the post-bond annealing of the bonded wafer pair. As a consequence, defects, such as voids, form at the bonding interface. To address the problem, a thin silicon nitride capping film was deposited on the silicon oxide layer before bonding to serve as a diffusion barrier to prevent moisture absorption and incorporation of -OH groups from the ambient. This process results in defect-free bonded wafers.

Graphene synthesized on porous silicon for active electrode material of supercapacitors

International Nuclear Information System (INIS)

Su, B B; Chen, X Y; Halvorsen, E

2016-01-01

We present graphene synthesized by chemical vapour deposition under atmospheric pressure on both porous nanostructures and flat wafers as electrode scaffolds for supercapacitors. A 3nm thin gold layer was deposited on samples of both porous and flat silicon for exploring the catalytic influence during graphene synthesis. Micro-four-point probe resistivity measurements revealed that the resistivity of porous silicon samples was nearly 53 times smaller than of the flat silicon ones when all the samples were covered by a thin gold layer after the graphene growth. From cyclic voltammetry, the average specific capacitance of porous silicon coated with gold was estimated to 267 μF/cm 2 while that without catalyst layer was 145μF/cm 2 . We demonstrated that porous silicon based on nanorods can play an important role in graphene synthesis and enable silicon as promising electrodes for supercapacitors. (paper)

Ultrafast Charge Photogeneration in MEH-PPV Charge-Transfer Complexes

NARCIS (Netherlands)

Bakulin, Artem A.; Paraschuk, Dmitry Yu; Pshenichnikov, Maxim S.; van Loosdrecht, Paul H. M.; Corkum, P; DeSilvestri, S; Nelson, KA; Riedle, E; Schoenlein, RW

2009-01-01

Visible-pump - IR-probe spectroscopy is used to study the ultrafast charge dynamics in MEH-PPV based charge-transfer complexes and donor-acceptor blends. Transient anisotropy of the polymer polaron band provides invaluable insights into excitation localisation and charge-transfer pathways.

Progress in ultrafast laser processing and future prospects

Science.gov (United States)

Sugioka, Koji

2017-03-01

The unique characteristics of ultrafast lasers have rapidly revolutionized materials processing after their first demonstration in 1987. The ultrashort pulse width of the laser suppresses heat diffusion to the surroundings of the processed region, which minimizes the formation of a heat-affected zone and thereby enables ultrahigh precision micro- and nanofabrication of various materials. In addition, the extremely high peak intensity can induce nonlinear multiphoton absorption, which extends the diversity of materials that can be processed to transparent materials such as glass. Nonlinear multiphoton absorption enables three-dimensional (3D) micro- and nanofabrication by irradiation with tightly focused femtosecond laser pulses inside transparent materials. Thus, ultrafast lasers are currently widely used for both fundamental research and practical applications. This review presents progress in ultrafast laser processing, including micromachining, surface micro- and nanostructuring, nanoablation, and 3D and volume processing. Advanced technologies that promise to enhance the performance of ultrafast laser processing, such as hybrid additive and subtractive processing, and shaped beam processing are discussed. Commercial and industrial applications of ultrafast laser processing are also introduced. Finally, future prospects of the technology are given with a summary.

Nondestructive neutron activation analysis of silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Vandergraaf, T. T.; Wikjord, A. G.

1973-10-15

Instrumentel neutron activation analysis was used to determine trace constituents in silicon carbide. Four commercial powders of different origin, an NBS reference material, and a single crystal were characterized. A total of 36 activation species were identified nondestructively by high resolution gamma spectrometry; quantitative results are given for 12 of the more predominant elements. The limitations of the method for certain elements are discussed. Consideration is given to the depression of the neutron flux by impurities with large neutron absorption cross sections. Radiation fields from the various specimens were estimated assuming all radionuclides have reached their saturation activities. (auth)

Generation and manipulation of entangled photons on silicon chips

Directory of Open Access Journals (Sweden)

Matsuda Nobuyuki

2016-08-01

Full Text Available Integrated quantum photonics is now seen as one of the promising approaches to realize scalable quantum information systems. With optical waveguides based on silicon photonics technologies, we can realize quantum optical circuits with a higher degree of integration than with silica waveguides. In addition, thanks to the large nonlinearity observed in silicon nanophotonic waveguides, we can implement active components such as entangled photon sources on a chip. In this paper, we report recent progress in integrated quantum photonic circuits based on silicon photonics. We review our work on correlated and entangled photon-pair sources on silicon chips, using nanoscale silicon waveguides and silicon photonic crystal waveguides. We also describe an on-chip quantum buffer realized using the slow-light effect in a silicon photonic crystal waveguide. As an approach to combine the merits of different waveguide platforms, a hybrid quantum circuit that integrates a silicon-based photon-pair source and a silica-based arrayed waveguide grating is also presented.

Porous silicon based anode material formed using metal reduction

Science.gov (United States)

Anguchamy, Yogesh Kumar; Masarapu, Charan; Deng, Haixia; Han, Yongbong; Venkatachalam, Subramanian; Kumar, Sujeet; Lopez, Herman A.

2015-09-22

A porous silicon based material comprising porous crystalline elemental silicon formed by reducing silicon dioxide with a reducing metal in a heating process followed by acid etching is used to construct negative electrode used in lithium ion batteries. Gradual temperature heating ramp(s) with optional temperature steps can be used to perform the heating process. The porous silicon formed has a high surface area from about 10 m.sup.2/g to about 200 m.sup.2/g and is substantially free of carbon. The negative electrode formed can have a discharge specific capacity of at least 1800 mAh/g at rate of C/3 discharged from 1.5V to 0.005V against lithium with in some embodiments loading levels ranging from about 1.4 mg/cm.sup.2 to about 3.5 mg/cm.sup.2. In some embodiments, the porous silicon can be coated with a carbon coating or blended with carbon nanofibers or other conductive carbon material.

Reactor neutron activation analysis for aluminium in the presence of phosphorus and silicon

International Nuclear Information System (INIS)

Mizumoto, Yoshihiko; Iwata, Shiro; Sasajima, Kazuhisa; Yoshimasu, Fumio; Yase, Yoshiro.

1984-01-01

Reactor neutron activation analysis for aluminium in samples containing phosphorus and silicon was studied. The experiments were performed by using neumatic tube of the Kyoto University Reactor (KUR). At first, the ratios of the 28 Al activity produced from 27 Al(n, γ) 28 Al reaction by thermal neutrons to that from 31 P(n, α) 28 Al reaction by fast neutrons, and to that from 28 Si(n, p) 28 Al reaction were measured by γ-ray spectrometry. With a ratio of about 5 for the thermal to fast neutron flux of KUR, the ratio of the 28 Al activity from aluminium to that from phosphorus was to be 812 +- 7, and to that from silicon 282 +- 3. Secondly, the contributions of 28 Al activities from phosphorus and silicon and the determination limit of aluminium were calculated for various parameters, such as fast neutron flux, thermal to fast neutron flux ratio, amounts of phosphorus and silicon, etc. Thirdly, on the basis of these results, aluminium contents in spinal cords and brains of amyotrophic lateral sclerosis, Parkinsonism-dementia complex and control cases were determined. (author)

Hot-electrons-induced ultrafast demagnitization in Co/Pt multilayers

NARCIS (Netherlands)

Bergeard, N.; Hehn, M.; Mangin, S.; Lengaigne, G.; Montaigne, F.; Lalieu, M. L. M.; Koopmans, B.; Malinowski, G.

2016-01-01

Using specially engineered structures to tailor the optical absorption in a metallic multilayer, we analyze the magnetization dynamics of a Co/Pt multilayer buried below a thick Cu layer. We demonstrate that hot electrons alone can very efficiently induce ultrafast demagnetization. Simulations based

Hybrid Integrated Platforms for Silicon Photonics

Directory of Open Access Journals (Sweden)

John E. Bowers

2010-03-01

Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

Synthesis and In Vitro Activity Assessment of Novel Silicon Oxycarbide-Based Bioactive Glasses

Directory of Open Access Journals (Sweden)

Isabel Gonzalo-Juan

2016-11-01

Full Text Available Novel bioactive glasses based on a Ca- and Mg-modified silicon oxycarbide (SiCaMgOC were prepared from a polymeric single-source precursor, and their in vitro activity towards hydroxyapatite mineralization was investigated upon incubating the samples in simulated body fluid (SBF at 37 °C. The as-prepared materials exhibit an outstanding resistance against devitrification processes and maintain their amorphous nature even after exposure to 1300 °C. The X-ray diffraction (XRD analysis of the SiCaMgOC samples after the SBF test showed characteristic reflections of apatite after only three days, indicating a promising bioactivity. The release kinetics of the Ca2+ and Mg2+ and the adsorption of H+ after immersion of SiCaMgOC in simulated body fluid for different soaking times were analyzed via optical emission spectroscopy. The results show that the mechanism of formation of apatite on the surface of the SiCaMgOC powders is similar to that observed for standard (silicate bioactive glasses. A preliminary cytotoxicity investigation of the SiOC-based bioactive glasses was performed in the presence of mouse embryonic fibroblasts (MEF as well as human embryonic kidney cells (HEK-293. Due to their excellent high-temperature crystallization resistance in addition to bioactivity, the Ca- and Mg-modified SiOC glasses presented here might have high potential in applications related to bone repair and regeneration.

Thermally-isolated silicon-based integrated circuits and related methods

Science.gov (United States)

Wojciechowski, Kenneth; Olsson, Roy H.; Clews, Peggy J.; Bauer, Todd

2017-05-09

Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

Method of making thermally-isolated silicon-based integrated circuits

Science.gov (United States)

Wojciechowski, Kenneth; Olsson, Roy; Clews, Peggy J.; Bauer, Todd

2017-11-21

Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

Annealing effects on recombinative activity of nickel at direct silicon bonded interface

Energy Technology Data Exchange (ETDEWEB)

Kojima, Takuto, E-mail: tkojima@toyota-ti.ac.jp; Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya, 468-8511 (Japan)

2015-09-15

By performing capacitance transient analyses, the recombination activity at a (110)/(100) direct silicon bonded (DSB) interface contaminated with nickel diffused at different temperatures, as a model of grain boundaries in multicrystalline silicon, was studied. The trap level depth from the valence band, trap density of states, and hole capture cross section peaked at an annealing temperature of 300 °C. At temperatures ⩾400 °C, the hole capture cross section increased with temperature, but the density of states remained unchanged. Further, synchrotron-based X-ray analyses, microprobe X-ray fluorescence (μ-XRF), and X-ray absorption near edge structure (XANES) analyses were performed. The analysis results indicated that the chemical phase after the sample was annealed at 200 °C was a mixture of NiO and NiSi{sub 2}.

Advances in Contactless Silicon Defect and Impurity Diagnostics Based on Lifetime Spectroscopy and Infrared Imaging

Directory of Open Access Journals (Sweden)

Jan Schmidt

2007-01-01

Full Text Available This paper gives a review of some recent developments in the field of contactless silicon wafer characterization techniques based on lifetime spectroscopy and infrared imaging. In the first part of the contribution, we outline the status of different lifetime spectroscopy approaches suitable for the identification of impurities in silicon and discuss—in more detail—the technique of temperature- and injection-dependent lifetime spectroscopy. The second part of the paper focuses on the application of infrared cameras to analyze spatial inhomogeneities in silicon wafers. By measuring the infrared signal absorbed or emitted from light-generated free excess carriers, high-resolution recombination lifetime mappings can be generated within seconds to minutes. In addition, mappings of non-recombination-active trapping centers can be deduced from injection-dependent infrared lifetime images. The trap density has been demonstrated to be an important additional parameter in the characterization and assessment of solar-grade multicrystalline silicon wafers, as areas of increased trap density tend to deteriorate during solar cell processing.

Soft silicone based interpenetrating networks as materials for actuators

DEFF Research Database (Denmark)

Yu, Liyun; Gonzalez, Lidia; Hvilsted, Søren

2014-01-01

A new approach based on silicone interpenetrating networks with orthogonal chemistries has been investigated with focus on developing soft and flexible elastomers with high energy densities and small viscous losses. The interpenetrating networks are made as simple two pot mixtures...... as for the commercial available silylation based elastomers such as Elastosil RT625. The resulting interpenetrating networks are formulated to be softer than RT625 to increase the actuation caused when applying a voltage due to their softness combined with the significantly higher permittivity than the pure silicone...

Low loss hollow-core waveguide on a silicon substrate

Science.gov (United States)

Yang, Weijian; Ferrara, James; Grutter, Karen; Yeh, Anthony; Chase, Chris; Yue, Yang; Willner, Alan E.; Wu, Ming C.; Chang-Hasnain, Connie J.

2012-07-01

Optical-fiber-based, hollow-core waveguides (HCWs) have opened up many new applications in laser surgery, gas sensors, and non-linear optics. Chip-scale HCWs are desirable because they are compact, light-weight and can be integrated with other devices into systems-on-a-chip. However, their progress has been hindered by the lack of a low loss waveguide architecture. Here, a completely new waveguiding concept is demonstrated using two planar, parallel, silicon-on-insulator wafers with high-contrast subwavelength gratings to reflect light in-between. We report a record low optical loss of 0.37 dB/cm for a 9-μm waveguide, mode-matched to a single mode fiber. Two-dimensional light confinement is experimentally realized without sidewalls in the HCWs, which is promising for ultrafast sensing response with nearly instantaneous flow of gases or fluids. This unique waveguide geometry establishes an entirely new scheme for low-cost chip-scale sensor arrays and lab-on-a-chip applications.

System-level integration of active silicon photonic biosensors

Science.gov (United States)

Laplatine, L.; Al'Mrayat, O.; Luan, E.; Fang, C.; Rezaiezadeh, S.; Ratner, D. M.; Cheung, K.; Dattner, Y.; Chrostowski, L.

2017-02-01

Biosensors based on silicon photonic integrated circuits have attracted a growing interest in recent years. The use of sub-micron silicon waveguides to propagate near-infrared light allows for the drastic reduction of the optical system size, while increasing its complexity and sensitivity. Using silicon as the propagating medium also leverages the fabrication capabilities of CMOS foundries, which offer low-cost mass production. Researchers have deeply investigated photonic sensor devices, such as ring resonators, interferometers and photonic crystals, but the practical integration of silicon photonic biochips as part of a complete system has received less attention. Herein, we present a practical system-level architecture which can be employed to integrate the aforementioned photonic biosensors. We describe a system based on 1 mm2 dies that integrate germanium photodetectors and a single light coupling device. The die are embedded into a 16x16 mm2 epoxy package to enable microfluidic and electrical integration. First, we demonstrate a simple process to mimic Fan-Out Wafer-level-Packaging, which enables low-cost mass production. We then characterize the photodetectors in the photovoltaic mode, which exhibit high sensitivity at low optical power. Finally, we present a new grating coupler concept to relax the lateral alignment tolerance down to +/- 50 μm at 1-dB (80%) power penalty, which should permit non-experts to use the biochips in a"plug-and-play" style. The system-level integration demonstrated in this study paves the way towards the mass production of low-cost and highly sensitive biosensors, and can facilitate their wide adoption for biomedical and agro-environmental applications.

Packaged mode multiplexer based on silicon photonics

NARCIS (Netherlands)

Chen, H.; Koonen, A.M.J.; Snyder, B.; Raz, O.; Boom, van den H.P.A.; Chen, X.

2012-01-01

A silicon photonics based mode multiplexer is proposed. Four chirped grating couplers structure can support all 6 channels in a two-mode fiber and realize LP01 and LP11 mode selective exciting. The packaged device is tested.

Silicon-Based Nanoscale Composite Energetic Materials

Science.gov (United States)

2013-02-01

1193-1211. 9. Krishnamohan, G., E.M. Kurian, and H.R. Rao, Thermal Analysis and Inverse Burning Rate Studies on Silicon-Potassium Nitrate System...reported in a journal paper and appears in the Appendix. Multiscale Nanoporous Silicon Combustion Introduction for nanoporous silicon effort While

Phosphorene quantum dot saturable absorbers for ultrafast fiber lasers

Science.gov (United States)

Du, J.; Zhang, M.; Guo, Z.; Chen, J.; Zhu, X.; Hu, G.; Peng, P.; Zheng, Z.; Zhang, H.

2017-01-01

We fabricate ultrasmall phosphorene quantum dots (PQDs) with an average size of 2.6 ± 0.9 nm using a liquid exfoliation method involving ultrasound probe sonication followed by bath sonication. By coupling the as-prepared PQDs with microfiber evanescent light field, the PQD-based saturable absorber (SA) device exhibits ultrafast nonlinear saturable absorption property, with an optical modulation depth of 8.1% at the telecommunication band. With the integration of the all-fiber PQD-based SA, a continuous-wave passively mode-locked erbium-doped (Er-doped) laser cavity delivers stable, self-starting pulses with a pulse duration of 0.88 ps and at the cavity repetition rate of 5.47 MHz. Our results contribute to the growing body of work studying the nonlinear optical properties of ultrasmall PQDs that present new opportunities of this two-dimensional (2D) nanomaterial for future ultrafast photonic technologies. PMID:28211471

Effect of porous silicon on the performances of silicon solar cells during the porous silicon-based gettering procedure

Energy Technology Data Exchange (ETDEWEB)

Nouri, H.; Bessais, B. [Laboratoire de Nanomateriaux et des Systemes pour l' Energie, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia); Bouaicha, M. [Laboratoire de Photovoltaique, des Semi-conducteurs et des Nanostructures, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

2009-10-15

In this work we analyse the effect of porous silicon on the performances of multicrystalline silicon (mc-Si) solar cells during the porous silicon-based gettering procedure. This procedure consists of forming PS layers on both front and back sides of the mc-Si wafers followed by an annealing in an infrared furnace under a controlled atmosphere at different temperatures. Three sets of samples (A, B and C) have been prepared; for samples A and B, the PS films were removed before and after annealing, respectively. In order to optimize the annealing temperature, we measure the defect density at a selected grain boundary (GB) using the dark current-voltage (I-V) characteristics across the GB itself. The annealing temperature was optimized to 1000 C. The effect of these treatments on the performances of mc-Si solar cells was studied by means of the current-voltage characteristic (at AM 1.5) and the internal quantum efficiency (IQE). The results obtained for cell A and cell B were compared to those obtained on a reference cell (C). (author)

PREFACE: Ultrafast and nonlinear optics in carbon nanomaterials

Science.gov (United States)

Kono, Junichiro

2013-02-01

Carbon-based nanomaterials—single-wall carbon nanotubes (SWCNTs) and graphene, in particular—have emerged in the last decade as novel low-dimensional systems with extraordinary properties. Because they are direct-bandgap systems, SWCNTs are one of the leading candidates to unify electronic and optical functions in nanoscale circuitry; their diameter-dependent bandgaps can be utilized for multi-wavelength devices. Graphene's ultrahigh carrier mobilities are promising for high-frequency electronic devices, while, at the same time, it is predicted to have ideal properties for terahertz generation and detection due to its unique zero-gap, zero-mass band structure. There have been a large number of basic optical studies on these materials, but most of them were performed in the weak-excitation, quasi-equilibrium regime. In order to probe and assess their performance characteristics as optoelectronic materials under device-operating conditions, it is crucial to strongly drive them and examine their optical properties in highly non-equilibrium situations and with ultrashot time resolution. In this section, the reader will find the latest results in this rapidly growing field of research. We have assembled contributions from some of the leading experts in ultrafast and nonlinear optical spectroscopy of carbon-based nanomaterials. Specific topics featured include: thermalization, cooling, and recombination dynamics of photo-generated carriers; stimulated emission, gain, and amplification; ultrafast photoluminescence; coherent phonon dynamics; exciton-phonon and exciton-plasmon interactions; exciton-exciton annihilation and Auger processes; spontaneous and stimulated emission of terahertz radiation; four-wave mixing and harmonic generation; ultrafast photocurrents; the AC Stark and Franz-Keldysh effects; and non-perturbative light-mater coupling. We would like to express our sincere thanks to those who contributed their latest results to this special section, and the

Analysis of the behavior of gold in silicon by neutron activation method

International Nuclear Information System (INIS)

Kohara, Rikusei

1977-01-01

Diffusion behavior and distribution of a trace of gold (10 16 Atoms/cm 3 level) in silicon have been investigated by neutron activation analysis and autoradiography. The diffusion coefficient of gold in silicon was expressed by the equation D(cm 2 /s)=5.6 exp (-49kcal/RT), which was approximately 10 5 times as much as that of phosphorus or boron. The solubility of gold in silicon at 1000 0 C and 1100 0 C was (1.9+-0.2)x10 16 and (6.7+-0.7)x10 16 Atoms/cm 3 , respectively. Two factors, in addition to temperature, were found to effect the concentration of gold in silicon. One is an enhanced gold solubility effect in the presence of such impurity elements as phosphorus or arsenic. Another is the similar effect induced by lattice defects in silicon crystals. A possible distribution model of gold in digital devices was proposed from these results. (auth.)

Electroplated contacts and porous silicon for silicon based solar cells applications

Energy Technology Data Exchange (ETDEWEB)

Kholostov, Konstantin, E-mail: kholostov@diet.uniroma1.it [Department of information engineering, electronics and telecommunications, University of Rome “La Sapienza”, Via Eudossiana 18, 00184 Rome (Italy); Serenelli, Luca; Izzi, Massimo; Tucci, Mario [Enea Casaccia Research Centre Rome, via Anguillarese 301, 00123 Rome (Italy); Balucani, Marco [Department of information engineering, electronics and telecommunications, University of Rome “La Sapienza”, Via Eudossiana 18, 00184 Rome (Italy); Rise Technology S.r.l., Lungomare Paolo Toscanelli 170, 00121 Rome (Italy)

2015-04-15

Highlights: • Uniformity of the Ni–Si interface is crucial for performance of Cu–Ni contacts on Si. • Uniformly filled PS is the key to obtain the best performance of Cu–Ni contacts on Si. • Optimization of anodization and electroplating allows complete filling of PS layer. • Highly adhesive and low contact resistance Cu–Ni contacts are obtained on Si. - Abstract: In this paper, a two-layer metallization for silicon based solar cells is presented. The metallization consists of thin nickel barrier and thick copper conductive layers, both obtained by electrodeposition technique suitable for phosphorus-doped 70–90 Ω/sq solar cell emitter formed on p-type silicon substrate. To ensure the adhesion between metal contact and emitter a very thin layer of mesoporous silicon is introduced on the emitter surface before metal deposition. This approach allows metal anchoring inside pores and improves silicon–nickel interface uniformity. Optimization of metal contact parameters is achieved varying the anodization and electrodeposition conditions. Characterization of contacts between metal and emitter is carried out by scanning electron microscopy, specific contact resistance and current–voltage measurements. Mechanical strength of nickel–copper contacts is evaluated by the peel test. Adhesion strength of more than 4.5 N/mm and contact resistance of 350 μΩ cm{sup 2} on 80 Ω/sq emitter are achieved.

Quantitative analyses of impurity silicon-carbide (SiC) and high-purity-titanium by neutron activation analyses based on k0-standardization method. Development of irradiation silicon technology in productivity using research reactor (Joint research)

International Nuclear Information System (INIS)

Motohashi, Jun; Takahashi, Hiroyuki; Magome, Hirokatsu; Sasajima, Fumio; Tokunaga, Okihiro; Kawasaki, Kozo; Onizawa, Koji; Isshiki, Masahiko

2009-07-01

JRR-3 and JRR-4 have been providing neutron-transmutation-doped silicon (NTD-Si) by using the silicon NTD process, which is a method to produce a high quality semiconductor. The domestic supply of NTD-Si is insufficient for the demand, and the market of NTD-Si is significantly growing at present. It is very important to increase achieve the production. To fulfill the requirement, we have been investigating a neutron filter, which is made of high-purity-titanium, for uniform doping. Silicon-carbide (SiC) semiconductor doped with NTD technology is considered suitable for high power devices with superior performances to conventional Si-based devices. We are very interested in the SiC as well. This report presents the results obtained after the impurity contents in the high-purity-titanium and SiC were analyzed by neutron activation analyses (NAA) using k 0 -standardization method. There were 6 and 9 impurity elements detected from the high-purity-titanium and SiC, respectively. Among those Sc from the high-purity-titanium and Fe from SiC were comparatively long half life nuclides. From the viewpoint of exposure in handling them, we need to examine the impurity control of materials. (author)

Fusion of Ultraviolet-Visible and Infrared Transient Absorption Spectroscopy Data to Model Ultrafast Photoisomerization.

Science.gov (United States)

Debus, Bruno; Orio, Maylis; Rehault, Julien; Burdzinski, Gotard; Ruckebusch, Cyril; Sliwa, Michel

2017-08-03

Ultrafast photoisomerization reactions generally start at a higher excited state with excess of internal vibrational energy and occur via conical intersections. This leads to ultrafast dynamics which are difficult to investigate with a single transient absorption spectroscopy technique, be it in the ultraviolet-visible (UV-vis) or infrared (IR) domain. On one hand, the information available in the UV-vis domain is limited as only slight spectral changes are observed for different isomers. On the other hand, the interpretation of vibrational spectra is strongly hindered by intramolecular relaxation and vibrational cooling. These limitations can be circumvented by fusing UV-vis and IR transient absorption spectroscopy data in a multiset multivariate curve resolution analysis. We apply this approach to describe the spectrodynamics of the ultrafast cis-trans photoisomerization around the C-N double bond observed for aromatic Schiff bases. Twisted intermediate states could be elucidated, and isomerization was shown to occur through a continuous complete rotation. More broadly, data fusion can be used to rationalize a vast range of ultrafast photoisomerization processes of interest in photochemistry.

Measurements of timing resolution of ultra-fast silicon detectors with the SAMPIC WTDC

CERN Document Server

Breton, Dominique

2016-11-01

The SAMpler for PICosecond time (SAMPIC) chip has been designed by a collaboration including CEA/IRFU/SEDI, Saclay and CNRS/LAL/SERDI, Orsay. It benefits from both the quick response of a time to digital converter (TDC) and the versatility of a waveform digitizer to perform accurate timing measurements. Thanks to the sampled signals, smart algorithms making best use of the pulse shape can be used to maximize time resolution. A software framework has been developed to analyse the SAMPIC output data and extract timing information by using either a constant fraction discriminator or a fast cross-correlation algorithm. SAMPIC timing capabilities together with the software framework have been tested using Gaussian signals generated by a signal generator or by silicon detectors pulsed with an infra-red laser. Under these ideal experimental conditions, the SAMPIC chip has proven to be capable of timing resolutions down to 4 (40) ps with synthesized (silicon detector) signals.

Ultrafast dynamics and laser action of organic semiconductors

CERN Document Server

Vardeny, Zeev Valy

2009-01-01

Spurred on by extensive research in recent years, organic semiconductors are now used in an array of areas, such as organic light emitting diodes (OLEDs), photovoltaics, and other optoelectronics. In all of these novel applications, the photoexcitations in organic semiconductors play a vital role. Exploring the early stages of photoexcitations that follow photon absorption, Ultrafast Dynamics and Laser Action of Organic Semiconductors presents the latest research investigations on photoexcitation ultrafast dynamics and laser action in pi-conjugated polymer films, solutions, and microcavities.In the first few chapters, the book examines the interplay of charge (polarons) and neutral (excitons) photoexcitations in pi-conjugated polymers, oligomers, and molecular crystals in the time domain of 100 fs-2 ns. Summarizing the state of the art in lasing, the final chapters introduce the phenomenon of laser action in organics and cover the latest optoelectronic applications that use lasing based on a variety of caviti...

Strained silicon as a new electro-optic material

DEFF Research Database (Denmark)

Jacobsen, Rune Shim; Andersen, Karin Nordström; Borel, Peter Ingo

2006-01-01

For decades, silicon has been the material of choice for mass fabrication of electronics. This is in contrast to photonics, where passive optical components in silicon have only recently been realized1, 2. The slow progress within silicon optoelectronics, where electronic and optical...... functionalities can be integrated into monolithic components based on the versatile silicon platform, is due to the limited active optical properties of silicon3. Recently, however, a continuous-wave Raman silicon laser was demonstrated4; if an effective modulator could also be realized in silicon, data...... processing and transmission could potentially be performed by all-silicon electronic and optical components. Here we have discovered that a significant linear electro-optic effect is induced in silicon by breaking the crystal symmetry. The symmetry is broken by depositing a straining layer on top...

Molecular Monolayers for Electrical Passivation and Functionalization of Silicon-Based Solar Energy Devices.

Science.gov (United States)

Veerbeek, Janneke; Firet, Nienke J; Vijselaar, Wouter; Elbersen, Rick; Gardeniers, Han; Huskens, Jurriaan

2017-01-11

Silicon-based solar fuel devices require passivation for optimal performance yet at the same time need functionalization with (photo)catalysts for efficient solar fuel production. Here, we use molecular monolayers to enable electrical passivation and simultaneous functionalization of silicon-based solar cells. Organic monolayers were coupled to silicon surfaces by hydrosilylation in order to avoid an insulating silicon oxide layer at the surface. Monolayers of 1-tetradecyne were shown to passivate silicon micropillar-based solar cells with radial junctions, by which the efficiency increased from 8.7% to 9.9% for n + /p junctions and from 7.8% to 8.8% for p + /n junctions. This electrical passivation of the surface, most likely by removal of dangling bonds, is reflected in a higher shunt resistance in the J-V measurements. Monolayers of 1,8-nonadiyne were still reactive for click chemistry with a model catalyst, thus enabling simultaneous passivation and future catalyst coupling.

Ultrafast photoinduced structure phase transition in antimony single crystals

NARCIS (Netherlands)

Fausti, Daniele; Misochko, Oleg V.; van Loosdrecht, Paul H. M.

2009-01-01

Picosecond Raman scattering is used to study the photoinduced ultrafast dynamics in Peierls distorted antimony. We find evidence for an ultrafast nonthermal reversible structural phase transition. Most surprisingly, we find evidence that this transition evolves toward a lower symmetry in contrast to

Multilayer-WS2:ferroelectric composite for ultrafast tunable metamaterial-induced transparency applications

Science.gov (United States)

Yang, Xiaoyu; Yang, Jinghuan; Hu, Xiaoyong; Zhu, Yu; Yang, Hong; Gong, Qihuang

2015-08-01

An ultrafast and low-power all-optical tunable metamaterial-induced transparency is realized, using polycrystalline barium titanate doped gold nanoparticles and multilayer tungsten disulfide microsheets as nonlinear optical materials. Large nonlinearity enhancement is obtained associated with quantum confinement effect, local-field effect, and reinforced interaction between light and multilayer tungsten disulfide. Low threshold pump intensity of 20 MW/cm2 is achieved. An ultrafast response time of 85 ps is maintained because of fast carrier relaxation dynamics in nanoscale crystal grains of polycrystalline barium titanate. This may be useful for the study of integrated photonic devices based on two-dimensional materials.

Multilayer-WS2:ferroelectric composite for ultrafast tunable metamaterial-induced transparency applications

International Nuclear Information System (INIS)

Yang, Xiaoyu; Yang, Jinghuan; Zhu, Yu; Yang, Hong; Hu, Xiaoyong; Gong, Qihuang

2015-01-01

An ultrafast and low-power all-optical tunable metamaterial-induced transparency is realized, using polycrystalline barium titanate doped gold nanoparticles and multilayer tungsten disulfide microsheets as nonlinear optical materials. Large nonlinearity enhancement is obtained associated with quantum confinement effect, local-field effect, and reinforced interaction between light and multilayer tungsten disulfide. Low threshold pump intensity of 20 MW/cm 2 is achieved. An ultrafast response time of 85 ps is maintained because of fast carrier relaxation dynamics in nanoscale crystal grains of polycrystalline barium titanate. This may be useful for the study of integrated photonic devices based on two-dimensional materials

Four-Dimensional Ultrafast Electron Microscopy: Insights into an Emerging Technique

KAUST Repository

Adhikari, Aniruddha

2016-12-15

Four-dimensional ultrafast electron microscopy (4D-UEM) is a novel analytical technique that aims to fulfill the long-held dream of researchers to investigate materials at extremely short spatial and temporal resolutions by integrating the excellent spatial resolution of electron microscopes with the temporal resolution of ultrafast femtosecond laser-based spectroscopy. The ingenious use of pulsed photoelectrons to probe surfaces and volumes of materials enables time-resolved snapshots of the dynamics to be captured in a way hitherto impossible by other conventional techniques. The flexibility of 4D-UEM lies in the fact that it can be used in both the scanning (S-UEM) and transmission (UEM) modes depending upon the type of electron microscope involved. While UEM can be employed to monitor elementary structural changes and phase transitions in samples using real-space mapping, diffraction, electron energy-loss spectroscopy, and tomography, S-UEM is well suited to map ultrafast dynamical events on materials surfaces in space and time. This review provides an overview of the unique features that distinguish these techniques and also illustrates the applications of both S-UEM and UEM to a multitude of problems relevant to materials science and chemistry.

Ballistic Spin Field Effect Transistor Based on Silicon Nanowires

Science.gov (United States)

Osintsev, Dmitri; Sverdlov, Viktor; Stanojevic, Zlatan; Selberherr, Siegfried

2011-03-01

We investigate the properties of ballistic spin field-effect transistors build on silicon nanowires. An accurate description of the conduction band based on the k . p} model is necessary in thin and narrow silicon nanostructures. The subband effective mass and subband splitting dependence on the nanowire dimensions is analyzed and used in the transport calculations. The spin transistor is formed by sandwiching the nanowire between two ferromagnetic metallic contacts. Delta-function barriers at the interfaces between the contacts and the silicon channel are introduced. The major contribution to the electric field-dependent spin-orbit interaction in confined silicon systems is due to the interface-induced inversion asymmetry which is of the Dresselhaus type. We study the current and conductance through the system for the contacts being in parallel and anti-parallel configurations. Differences between the [100] and [110] orientated structures are investigated in details. This work is supported by the European Research Council through the grant #247056 MOSILSPIN.

Progress in ultrafast intense laser science

CERN Document Server

Yamanouchi, Kaoru; Mathur, Deepak

2014-01-01

The PUILS series delivers up-to-date reviews of progress in Ultrafast Intense Laser Science, a newly emerging interdisciplinary research field spanning atomic and molecular physics, molecular science, and optical science, which has been stimulated by the recent developments in ultrafast laser technologies. Each volume compiles peer-reviewed articles authored by researchers at the forefront of each their own subfields of UILS. Every chapter opens with an overview of the topics to be discussed, so that researchers unfamiliar to the subfield, as well as graduate students, can grasp the importance

A silicon-based electrochemical sensor for highly sensitive, specific, label-free and real-time DNA detection

International Nuclear Information System (INIS)

Guo, Yuanyuan; Su, Shao; Wei, Xinpan; Zhong, Yiling; Su, Yuanyuan; He, Yao; Huang, Qing; Fan, Chunhai

2013-01-01

We herein present a new kind of silicon-based electrochemical sensor using a gold nanoparticles-decorated silicon wafer (AuNPs@Si) as a high-performance electrode, which is facilely prepared via in situ AuNPs growth on a silicon wafer. Particularly significantly, the resultant electrochemical sensor is efficacious for label-free DNA detection with high sensitivity due to the unique merits of the prepared silicon-based electrode. Typically, DNA at remarkably low concentrations (1–10 fM) could be readily detected without requiring additional signal-amplification procedures, which is better than or comparable to the lowest DNA concentration ever detected via well-studied signal-amplification-assisted electrochemical sensors. Moreover, the silicon-based sensor features high specificity, allowing unambiguous discrimination of single-based mismatches. We further show that real-time DNA assembly is readily monitored via recording the intensity changes of current signals due to the robust thermal stability of the silicon-based electrode. The unprecedented advantages of the silicon-based electrochemical sensor would offer new opportunities for myriad sensing applications. (paper)

THz-wave generation via difference frequency mixing in strained silicon based waveguide utilizing its second order susceptibility χ((2)).

Science.gov (United States)

Saito, Kyosuke; Tanabe, Tadao; Oyama, Yutaka

2014-07-14

Terahertz (THz) wave generation via difference frequency mixing (DFM) process in strain silicon membrane waveguides by introducing the straining layer is theoretically investigated. The Si(3)N(4) straining layer induces anisotropic compressive strain in the silicon core and results in the appearance of the bulk second order nonlinear susceptibility χ((2)) by breaking the crystal symmetry. We have proposed waveguide structures for THz wave generation under the DFM process by .using the modal birefringence in the waveguide core. Our simulations show that an output power of up to 0.95 mW can be achieved at 9.09 THz. The strained silicon optical device may open a widow in the field of the silicon-based active THz photonic device applications.

Ultrafast THz Saturable Absorption in Doped Semiconductors

DEFF Research Database (Denmark)

Turchinovich, Dmitry; Hoffmann, Matthias C.

2011-01-01

We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.......We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields....

Mechanical engineering and design of silicon-based particle tracking devices

International Nuclear Information System (INIS)

Miller, W.O.; Thompson, T.C.; Gamble, M.T.; Reid, R.S.; Woloshun, K.A.; Dransfield, G.D.; Ziock, H.J.

1990-01-01

The Mechanical Engineering and Electronics Division of the Los Alamos National Laboratory has been investigating silicon-based particle tracking device technology as part of the Superconducting Super Collider-sponsored silicon subsystem collaboration. Structural, thermal, and materials issues have been addressed. This paper discussed detector structural integrity and stability, including detailed finite element models of the silicon chip support and predictive methods used in designing with advanced composite materials. Electronic thermal loading and efficient dissipation of such energy using heat pipe technology has been investigated. The use of materials whose coefficients of thermal expansion are engineered to match silicon or to be near zero, as appropriate, have been explored. Material analysis and test results from radiation, chemical, and static loading are compared with analytical predictions and discussed. 1 ref., 2 figs., 1 tab

Molecular monolayers for electrical passivation and functionalization of silicon-based solar energy devices

NARCIS (Netherlands)

Veerbeek, Janneke; Firet, Nienke J.; Vijselaar, Wouter; Elbersen, R.; Gardeniers, Han; Huskens, Jurriaan

2017-01-01

Silicon-based solar fuel devices require passivation for optimal performance yet at the same time need functionalization with (photo)catalysts for efficient solar fuel production. Here, we use molecular monolayers to enable electrical passivation and simultaneous functionalization of silicon-based

Parametric spectro-temporal analyzer (PASTA) for ultrafast optical performance monitoring

Science.gov (United States)

Zhang, Chi; Wong, Kenneth K. Y.

2013-12-01

Ultrafast optical spectrum monitoring is one of the most challenging tasks in observing ultrafast phenomena, such as the spectroscopy, dynamic observation of the laser cavity, and spectral encoded imaging systems. However, conventional method such as optical spectrum analyzer (OSA) spatially disperses the spectrum, but the space-to-time mapping is realized by mechanical rotation of a grating, so are incapable of operating at high speed. Besides the spatial dispersion, temporal dispersion provided by dispersive fiber can also stretches the spectrum in time domain in an ultrafast manner, but is primarily confined in measuring short pulses. In view of these constraints, here we present a real-time spectrum analyzer called parametric spectro-temporal analyzer (PASTA), which is based on the time-lens focusing mechanism. It achieves a 100-MHz frame rate and can measure arbitrary waveforms. For the first time, we observe the dynamic spectrum of an ultrafast swept-source: Fourier domain mode-locked (FDML) laser, and the spectrum evolution of a laser cavity during its stabilizing process. In addition to the basic single-lens structure, the multi-lens configurations (e.g. telescope or wide-angle scope) will provide a versatile operating condition, which can zoom in to achieve 0.05-nm resolution and zoom out to achieve 10-nm observation range, namely 17 times zoom in/out ratio. In view of the goal of achieving spectrum analysis with fine accuracy, PASTA provides a promising path to study the real-time spectrum of some dynamic phenomena and non-repetitive events, with orders of magnitude enhancement in the frame rate over conventional OSAs.

Ultrafast Ultrasound Imaging With Cascaded Dual-Polarity Waves.

Science.gov (United States)

Zhang, Yang; Guo, Yuexin; Lee, Wei-Ning

2018-04-01

Ultrafast ultrasound imaging using plane or diverging waves, instead of focused beams, has advanced greatly the development of novel ultrasound imaging methods for evaluating tissue functions beyond anatomical information. However, the sonographic signal-to-noise ratio (SNR) of ultrafast imaging remains limited due to the lack of transmission focusing, and thus insufficient acoustic energy delivery. We hereby propose a new ultrafast ultrasound imaging methodology with cascaded dual-polarity waves (CDWs), which consists of a pulse train with positive and negative polarities. A new coding scheme and a corresponding linear decoding process were thereby designed to obtain the recovered signals with increased amplitude, thus increasing the SNR without sacrificing the frame rate. The newly designed CDW ultrafast ultrasound imaging technique achieved higher quality B-mode images than coherent plane-wave compounding (CPWC) and multiplane wave (MW) imaging in a calibration phantom, ex vivo pork belly, and in vivo human back muscle. CDW imaging shows a significant improvement in the SNR (10.71 dB versus CPWC and 7.62 dB versus MW), penetration depth (36.94% versus CPWC and 35.14% versus MW), and contrast ratio in deep regions (5.97 dB versus CPWC and 5.05 dB versus MW) without compromising other image quality metrics, such as spatial resolution and frame rate. The enhanced image qualities and ultrafast frame rates offered by CDW imaging beget great potential for various novel imaging applications.

An ultrafast electron microscope gun driven by two-photon photoemission from a nanotip cathode

International Nuclear Information System (INIS)

Bormann, Reiner; Strauch, Stefanie; Schäfer, Sascha; Ropers, Claus

2015-01-01

We experimentally and numerically investigate the performance of an advanced ultrafast electron source, based on two-photon photoemission from a tungsten needle cathode incorporated in an electron microscope gun geometry. Emission properties are characterized as a function of the electrostatic gun settings, and operating conditions leading to laser-triggered electron beams of very low emittance (below 20 nm mrad) are identified. The results highlight the excellent suitability of optically driven nano-cathodes for the further development of ultrafast transmission electron microscopy

Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors

Science.gov (United States)

2016-05-16

AFRL-AFOSR-JP-TR-2016-0054 Silicon based mid infrared SiGeSn heterostrcture emitters and detectors Greg Sun UNIVERSITY OF MASSACHUSETTS Final Report... Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors ” February 10, 2016 Principal Investigator: Greg Sun Engineering...diodes are incompatible with the CMOS process and therefore cannot be easily integrated with Si electronics . The GeSn mid IR detectors developed in

Melting of Grey Cast Iron Based on Steel Scrap Using Silicon Carbide

Directory of Open Access Journals (Sweden)

Stojczew A.

2014-08-01

Full Text Available The paper presents the issue of synthetic cast iron production in the electric induction furnace exclusively on the steel scrap base. Silicon carbide and synthetic graphite were used as carburizers. The carburizers were introduced with solid charge or added on the liquid metal surface. The chemical analysis of the produced cast iron, the carburization efficiency and microstructure features were presented in the paper. It was stated that ferrosilicon can be replaced by silicon carbide during the synthetic cast iron melting process. However, due to its chemical composition (30% C and 70% Si which causes significant silicon content in iron increase, the carbon deficit can be partly compensated by the carburizer introduction. Moreover it was shown that the best carbon and silicon assimilation rate is obtained where the silicon carbide is being introduced together with solid charge. When it is thrown onto liquid alloy surface the efficiency of the process is almost two times less and the melting process lasts dozen minutes long. The microstructure of the cast iron produced with the silicon carbide shows more bulky graphite flakes than inside the microstructure of cast iron produced on the pig iron base.

A compact plasmonic MOS-based 2×2 electro-optic switch

Directory of Open Access Journals (Sweden)

Ye Chenran

2015-01-01

Full Text Available We report on a three-waveguide electro-optic switch for compact photonic integrated circuits and data routing applications. The device features a plasmonic metal-oxide-semiconductor (MOS mode for enhanced light-matter-interactions. The switching mechanism originates from a capacitor-like design where the refractive index of the active medium, indium-tin-oxide, is altered via shifting the plasma frequency due to carrier accumulation inside the waveguide-based MOS structure. This light manipulation mechanism controls the transmission direction of transverse magnetic polarized light into either a CROSS or BAR waveguide port. The extinction ratio of 18 (7 dB for the CROSS (BAR state, respectively, is achieved via a gating voltage bias. The ultrafast broadband fJ/bit device allows for seamless integration with silicon-on-insulator platforms for low-cost manufacturing.

Imaging the Ultrafast Photoelectron Transfer Process in Alizarin-TiO2

Directory of Open Access Journals (Sweden)

Tatiana Gomez

2015-07-01

Full Text Available In this work, we adopt a quantum mechanical approach based on time-dependent density functional theory (TDDFT to study the optical and electronic properties of alizarin supported on TiO2 nano-crystallites, as a prototypical dye-sensitized solar cell. To ensure proper alignment of the donor (alizarin and acceptor (TiO2 nano-crystallite levels, static optical excitation spectra are simulated using time-dependent density functional theory in response. The ultrafast photoelectron transfer from the dye to the cluster is simulated using an explicitly time-dependent, one-electron TDDFT ansatz. The model considers the δ-pulse excitation of a single active electron localized in the dye to the complete set of energetically accessible, delocalized molecular orbitals of the dye/nano-crystallite complex. A set of quantum mechanical tools derived from the transition electronic flux density is introduced to visualize and analyze the process in real time. The evolution of the created wave packet subject to absorbing boundary conditions at the borders of the cluster reveal that, while the electrons of the aromatic rings of alizarin are heavily involved in an ultrafast charge redistribution between the carbonyl groups of the dye molecule, they do not contribute positively to the electron injection and, overall, they delay the process.

Performance Enhancement of Silicon Alloy-Based Anodes Using Thermally Treated Poly(amide imide) as a Polymer Binder for High Performance Lithium-Ion Batteries.

Science.gov (United States)

Yang, Hwi Soo; Kim, Sang-Hyung; Kannan, Aravindaraj G; Kim, Seon Kyung; Park, Cheolho; Kim, Dong-Won

2016-04-05

The development of silicon-based anodes with high capacity and good cycling stability for next-generation lithium-ion batteries is a very challenging task due to the large volume changes in the electrodes during repeated cycling, which results in capacity fading. In this work, we synthesized silicon alloy as an active anode material, which was composed of silicon nanoparticles embedded in Cu-Al-Fe matrix phases. Poly(amide imide)s, (PAI)s, with different thermal treatments were used as polymer binders in the silicon alloy-based electrodes. A systematic study demonstrated that the thermal treatment of the silicon alloy electrodes at high temperature made the electrodes mechanically strong and remarkably enhanced the cycling stability compared to electrodes without thermal treatment. The silicon alloy electrode thermally treated at 400 °C initially delivered a discharge capacity of 1084 mAh g(-1) with good capacity retention and high Coulombic efficiency. This superior cycling performance was attributed to the strong adhesion of the PAI binder resulting from enhanced secondary interactions, which maintained good electrical contacts between the active materials, electronic conductors, and current collector during cycling. These findings are supported by results from X-ray photoelectron spectroscopy, scanning electron microscopy, and a surface and interfacial cutting analysis system.

Enhanced photoresponsivity in graphene-silicon slow-light photonic crystal waveguides

International Nuclear Information System (INIS)

Zhou, Hao; Gu, Tingyi; McMillan, James F.; Yu, Mingbin; Lo, Guoqiang; Kwong, Dim-Lee; Feng, Guoying; Zhou, Shouhuan; Wong, Chee Wei

2016-01-01

We demonstrate the enhanced fast photoresponsivity in graphene hybrid structures by combining the ultrafast dynamics of graphene with improved light-matter interactions in slow-light photonic crystal waveguides. With a 200 μm interaction length, a 0.8 mA/W photoresponsivity is achieved in a graphene-silicon Schottky-like photodetector, with an operating bandwidth in excess of 5 GHz and wavelength range at least from 1480 nm to 1580 nm. Fourfold enhancement of the photocurrent is observed in the slow light region, compared to the wavelength far from the photonic crystal bandedge, for a chip-scale broadband fast photodetector.

Recent advances in ultrafast-laser-based spectroscopy and imaging for reacting plasmas and flames

Science.gov (United States)

Patnaik, Anil K.; Adamovich, Igor; Gord, James R.; Roy, Sukesh

2017-10-01

Reacting flows and plasmas are prevalent in a wide array of systems involving defense, commercial, space, energy, medical, and consumer products. Understanding the complex physical and chemical processes involving reacting flows and plasmas requires measurements of key parameters, such as temperature, pressure, electric field, velocity, and number densities of chemical species. Time-resolved measurements of key chemical species and temperature are required to determine kinetics related to the chemical reactions and transient phenomena. Laser-based, noninvasive linear and nonlinear spectroscopic approaches have proved to be very valuable in providing key insights into the physico-chemical processes governing reacting flows and plasmas as well as validating numerical models. The advent of kilohertz rate amplified femtosecond lasers has expanded the multidimensional imaging of key atomic species such as H, O, and N in a significant way, providing unprecedented insight into preferential diffusion and production of these species under chemical reactions or electric-field driven processes. These lasers not only provide 2D imaging of chemical species but have the ability to perform measurements free of various interferences. Moreover, these lasers allow 1D and 2D temperature-field measurements, which were quite unimaginable only a few years ago. The rapid growth of the ultrafast-laser-based spectroscopic measurements has been fueled by the need to achieve the following when measurements are performed in reacting flows and plasmas. They are: (1) interference-free measurements (collision broadening, photolytic dissociation, Stark broadening, etc), (2) time-resolved single-shot measurements at a rate of 1-10 kHz, (3) spatially-resolved measurements, (4) higher dimensionality (line, planar, or volumetric), and (5) simultaneous detection of multiple species. The overarching goal of this article is to review the current state-of-the-art ultrafast-laser-based spectroscopic

Frequency dependence of the active impedance component of silicon thin-film resistors

International Nuclear Information System (INIS)

Belogurov, S.V.; Gostilo, V.V.; Yurov, A.S.

1987-01-01

A high-resistant resistor on the silicon thin-film substrate considerably superior in noise and frequency performance than commercial resistors is described. The frequency dependence of the active impedance component is tested for determining noise and frequency dependences of silicon thin-film resistors. The obtained results permit to calculate the energy equivalent of resistor noise in nuclear radiation detection units at any temperature according to its frequency characteristic at room temperature

Silicone-based Dielectric Elastomers

DEFF Research Database (Denmark)

Skov, Anne Ladegaard

Efficient conversion of energy from one form to another (transduction) is an important topic in our daily day, and it is a necessity in moving away from the fossil based society. Dielectric elastomers hold great promise as soft transducers, since they are compliant and light-weight amongst many...... energy efficient solutions are highly sought. These properties allow for interesting products ranging very broadly, e.g. from eye implants over artificial skins over soft robotics to huge wave energy harvesting plants. All these products utilize the inherent softness and compliance of the dielectric...... elastomer transducers. The subject of this thesis is improvement of properties of silicone-based dielectric elastomers with special focus on design guides towards electrically, mechanically, and electromechanically reliable elastomers. Strategies for improving dielectric elastomer performance are widely...

Deposition of silicon films in presence of nitrogen plasma— A ...

Indian Academy of Sciences (India)

Unknown

Abstract. A design, development and validation work of plasma based 'activated reactive evaporation (ARE) system' is implemented for the deposition of the silicon films in presence of nitrogen plasma on substrate maintained at room temperature. This plasma based deposition system involves evaporation of pure silicon by.

Nonlinear performance of asymmetric coupler based on dual-core photonic crystal fiber: Towards sub-nanojoule solitonic ultrafast all-optical switching

Science.gov (United States)

Curilla, L.; Astrauskas, I.; Pugzlys, A.; Stajanca, P.; Pysz, D.; Uherek, F.; Baltuska, A.; Bugar, I.

2018-05-01

We demonstrate ultrafast soliton-based nonlinear balancing of dual-core asymmetry in highly nonlinear photonic crystal fiber at sub-nanojoule pulse energy level. The effect of fiber asymmetry was studied experimentally by selective excitation and monitoring of individual fiber cores at different wavelengths between 1500 nm and 1800 nm. Higher energy transfer rate to non-excited core was observed in the case of fast core excitation due to nonlinear asymmetry balancing of temporal solitons, which was confirmed by the dedicated numerical simulations based on the coupled generalized nonlinear Schrödinger equations. Moreover, the simulation results correspond qualitatively with the experimentally acquired dependences of the output dual-core extinction ratio on excitation energy and wavelength. In the case of 1800 nm fast core excitation, narrow band spectral intensity switching between the output channels was registered with contrast of 23 dB. The switching was achieved by the change of the excitation pulse energy in sub-nanojoule region. The performed detailed analysis of the nonlinear balancing of dual-core asymmetry in solitonic propagation regime opens new perspectives for the development of ultrafast nonlinear all-optical switching devices.

ARROW-based silicon-on-insulator photonic crystal waveguides with reduced losses

DEFF Research Database (Denmark)

Lavrinenko, Andrei; Novitsky, A.; Zhilko, V.V.

2006-01-01

We employ an antiresonant reflecting layers arrangement with silicon-on-insulator based photonic crystal waveguides. The 3D FDTD numerical modelling reveals improved transmission in such structures with a promising potential for their application in photonic circuits.......We employ an antiresonant reflecting layers arrangement with silicon-on-insulator based photonic crystal waveguides. The 3D FDTD numerical modelling reveals improved transmission in such structures with a promising potential for their application in photonic circuits....

Stretchable and foldable silicon-based electronics

KAUST Repository

Cavazos Sepulveda, Adrian Cesar

2017-03-30

Flexible and stretchable semiconducting substrates provide the foundation for novel electronic applications. Usually, ultra-thin, flexible but often fragile substrates are used in such applications. Here, we describe flexible, stretchable, and foldable 500-μm-thick bulk mono-crystalline silicon (100) “islands” that are interconnected via extremely compliant 30-μm-thick connectors made of silicon. The thick mono-crystalline segments create a stand-alone silicon array that is capable of bending to a radius of 130 μm. The bending radius of the array does not depend on the overall substrate thickness because the ultra-flexible silicon connectors are patterned. We use fracture propagation to release the islands. Because they allow for three-dimensional monolithic stacking of integrated circuits or other electronics without any through-silicon vias, our mono-crystalline islands can be used as a “more-than-Moore” strategy and to develop wearable electronics that are sufficiently robust to be compatible with flip-chip bonding.

Stretchable and foldable silicon-based electronics

KAUST Repository

Cavazos Sepulveda, Adrian Cesar; Diaz Cordero, M. S.; Carreno, Armando Arpys Arevalo; Nassar, Joanna M.; Hussain, Muhammad Mustafa

2017-01-01

Flexible and stretchable semiconducting substrates provide the foundation for novel electronic applications. Usually, ultra-thin, flexible but often fragile substrates are used in such applications. Here, we describe flexible, stretchable, and foldable 500-μm-thick bulk mono-crystalline silicon (100) “islands” that are interconnected via extremely compliant 30-μm-thick connectors made of silicon. The thick mono-crystalline segments create a stand-alone silicon array that is capable of bending to a radius of 130 μm. The bending radius of the array does not depend on the overall substrate thickness because the ultra-flexible silicon connectors are patterned. We use fracture propagation to release the islands. Because they allow for three-dimensional monolithic stacking of integrated circuits or other electronics without any through-silicon vias, our mono-crystalline islands can be used as a “more-than-Moore” strategy and to develop wearable electronics that are sufficiently robust to be compatible with flip-chip bonding.

Silicon-based photonic crystals fabricated using proton beam writing combined with electrochemical etching method.

Science.gov (United States)

Dang, Zhiya; Breese, Mark Bh; Recio-Sánchez, Gonzalo; Azimi, Sara; Song, Jiao; Liang, Haidong; Banas, Agnieszka; Torres-Costa, Vicente; Martín-Palma, Raúl José

2012-07-23

A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon using ion beam irradiation of bulk p-type silicon followed by electrochemical etching is shown. It opens a route towards the fabrication of two-dimensional (2D) and 3D silicon-based photonic crystals with high flexibility and industrial compatibility. In this work, we present the fabrication of 2D photonic lattice and photonic slab structures and propose a process for the fabrication of 3D woodpile photonic crystals based on this approach. Simulated results of photonic band structures for the fabricated 2D photonic crystals show the presence of TE or TM gap in mid-infrared range.

Temperature detectors on irradiated silicon base

International Nuclear Information System (INIS)

Karimov, M.; Dzhalelov, M.A.; Kurbanov, A.O.

2005-01-01

It is well known, that the most suitable for thermal resistors production is compensated silicon with impurities forming deep lying in forbidden zone, having big negative resistance temperature coefficients (RTC). In the capacity of initial materials for thermal resistors with negative RTC the n-type monocrystalline silicon with specific resistance ∼30 Ω·cm at 300 K is applied. Before the irradiation the phosphorus diffusion is realizing at temperature ∼1000 deg. C for 10 min. Irradiation is putting into practise by WWR-SM reactor fast neutrons within the range (7-10)·10 13 cm -2 . The produced resistors have nominal resistance range (8-20)·10 3 Ω·cm, coefficient of the thermal sensitivity B=4000-6000 deg. C., RTC α 300K =4-6.6 %/grad. It is shown, that offered method allows to obtain same type resistors characteristics on the base of neutron-irradiated material

Novel fabrication of silicon carbide based ceramics for nuclear applications

Science.gov (United States)

Singh, Abhishek Kumar

Advances in nuclear reactor technology and the use of gas-cooled fast reactors require the development of new materials that can operate at the higher temperatures expected in these systems. These materials include refractory alloys based on Nb, Zr, Ta, Mo, W, and Re; ceramics and composites such as SiC--SiCf; carbon--carbon composites; and advanced coatings. Besides the ability to handle higher expected temperatures, effective heat transfer between reactor components is necessary for improved efficiency. Improving thermal conductivity of the fuel can lower the center-line temperature and, thereby, enhance power production capabilities and reduce the risk of premature fuel pellet failure. Crystalline silicon carbide has superior characteristics as a structural material from the viewpoint of its thermal and mechanical properties, thermal shock resistance, chemical stability, and low radioactivation. Therefore, there have been many efforts to develop SiC based composites in various forms for use in advanced energy systems. In recent years, with the development of high yield preceramic precursors, the polymer infiltration and pyrolysis (PIP) method has aroused interest for the fabrication of ceramic based materials, for various applications ranging from disc brakes to nuclear reactor fuels. The pyrolysis of preceramic polymers allow new types of ceramic materials to be processed at relatively low temperatures. The raw materials are element-organic polymers whose composition and architecture can be tailored and varied. The primary focus of this study is to use a pyrolysis based process to fabricate a host of novel silicon carbide-metal carbide or oxide composites, and to synthesize new materials based on mixed-metal silicocarbides that cannot be processed using conventional techniques. Allylhydridopolycarbosilane (AHPCS), which is an organometal polymer, was used as the precursor for silicon carbide. Inert gas pyrolysis of AHPCS produces near-stoichiometric amorphous

Size Control of Porous Silicon-Based Nanoparticles via Pore-Wall Thinning.

Science.gov (United States)

Secret, Emilie; Leonard, Camille; Kelly, Stefan J; Uhl, Amanda; Cozzan, Clayton; Andrew, Jennifer S

2016-02-02

Photoluminescent silicon nanocrystals are very attractive for biomedical and electronic applications. Here a new process is presented to synthesize photoluminescent silicon nanocrystals with diameters smaller than 6 nm from a porous silicon template. These nanoparticles are formed using a pore-wall thinning approach, where the as-etched porous silicon layer is partially oxidized to silica, which is dissolved by a hydrofluoric acid solution, decreasing the pore-wall thickness. This decrease in pore-wall thickness leads to a corresponding decrease in the size of the nanocrystals that make up the pore walls, resulting in the formation of smaller nanoparticles during sonication of the porous silicon. Particle diameters were measured using dynamic light scattering, and these values were compared with the nanocrystallite size within the pore wall as determined from X-ray diffraction. Additionally, an increase in the quantum confinement effect is observed for these particles through an increase in the photoluminescence intensity of the nanoparticles compared with the as-etched nanoparticles, without the need for a further activation step by oxidation after synthesis.

Energy Conversion Properties of ZnSiP2, a Lattice-Matched Material for Silicon-Based Tandem Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Martinez, Aaron D.; Warren, Emily L.; Gorai, Prashun; Borup, Kasper A.; Krishna, Lakshmi; Kuciauskas, Darius; Dippo, Patricia C.; Ortiz, Brenden R.; Stradins, Paul; Stevanovic, Vladan; Toberer, Eric S.; Tamboli, Adele C.

2016-11-21

ZnSiP2 demonstrates promising potential as an optically active material on silicon. There has been a longstanding need for wide band gap materials that can be integrated with Si for tandem photovoltaics and other optoelectronic applications. ZnSiP2 is an inexpensive, earth abundant, wide band gap material that is stable and lattice matched with silicon. This conference proceeding summarizes our PV-relevant work on bulk single crystal ZnSiP2, highlighting the key findings and laying the ground work for integration into Si-based tandem devices.

Ultrafast photon counting applied to resonant scanning STED microscopy.

Science.gov (United States)

Wu, Xundong; Toro, Ligia; Stefani, Enrico; Wu, Yong

2015-01-01

To take full advantage of fast resonant scanning in super-resolution stimulated emission depletion (STED) microscopy, we have developed an ultrafast photon counting system based on a multigiga sample per second analogue-to-digital conversion chip that delivers an unprecedented 450 MHz pixel clock (2.2 ns pixel dwell time in each scan). The system achieves a large field of view (∼50 × 50 μm) with fast scanning that reduces photobleaching, and advances the time-gated continuous wave STED technology to the usage of resonant scanning with hardware-based time-gating. The assembled system provides superb signal-to-noise ratio and highly linear quantification of light that result in superior image quality. Also, the system design allows great flexibility in processing photon signals to further improve the dynamic range. In conclusion, we have constructed a frontier photon counting image acquisition system with ultrafast readout rate, excellent counting linearity, and with the capacity of realizing resonant-scanning continuous wave STED microscopy with online time-gated detection. © 2014 The Authors Journal of Microscopy © 2014 Royal Microscopical Society.

Silicone-Based Triboelectric Nanogenerator for Water Wave Energy Harvesting.

Science.gov (United States)

Xiao, Tian Xiao; Jiang, Tao; Zhu, Jian Xiong; Liang, Xi; Xu, Liang; Shao, Jia Jia; Zhang, Chun Lei; Wang, Jie; Wang, Zhong Lin

2018-01-31

Triboelectric nanogenerator (TENG) has been proven to be efficient for harvesting water wave energy, which is one of the most promising renewable energy sources. In this work, a TENG with a silicone rubber/carbon black composite electrode was designed for converting the water wave energy into electricity. The silicone-based electrode with a soft texture provides a better contact with the dielectric film. Furthermore, a spring structure is introduced to transform low-frequency water wave motions into high-frequency vibrations. They together improve the output performance and efficiency of TENG. The output performances of TENGs are further enhanced by optimizing the triboelectric material pair and tribo-surface area. A spring-assisted TENG device with the segmented silicone rubber-based electrode structure was sealed into a waterproof box, which delivers a maximum power density of 2.40 W m -3 , as triggered by the water waves. The present work provides a new strategy for fabricating high-performance TENG devices by coupling flexible electrodes and spring structure for harvesting water wave energy.

Highly sensitive and ultrafast response surface acoustic wave humidity sensor based on electrospun polyaniline/poly(vinyl butyral) nanofibers

International Nuclear Information System (INIS)

Lin Qianqian; Li Yang; Yang Mujie

2012-01-01

Highlights: ► Polyanline/poly(vinyl butyral) nanofibers are prepared by electrospinning. ► Nanofiber-based SAW humidity sensor show high sensitivity and ultrafast response. ► The SAW sensor can detect very low humidity. - Abstract: Polyaniline (PANi) composite nanofibers were deposited on surface acoustic wave (SAW) resonator with a central frequency of 433 MHz to construct humidity sensors. Electrospun nanofibers of poly(methyl methacrylate), poly(vinyl pyrrolidone), poly(ethylene oxide), poly(vinylidene fluoride), poly(vinyl butyral) (PVB) were characterized by scanning electron microscopy, and humidity response of corresponding SAW humidity sensors were investigated. The results indicated that PVB was suitable as a matrix to form nanofibers with PANi by electrospinning (ES). Electrospun PANi/PVB nanofibers exhibited a core–sheath structure as revealed by transmittance electron microscopy. Effects of ES collection time on humidity response of SAW sensor based on PANi/PVB nanofibers were examined at room temperature. The composite nanofiber sensor exhibited very high sensitivity of ∼75 kHz/%RH from 20 to 90%RH, ultrafast response (1 s and 2 s for humidification and desiccation, respectively) and good sensing linearity. Furthermore, the sensor could detect humidity as low as 0.5%RH, suggesting its potentials for low humidity detection. Attempts were done to explain the attractive humidity sensing performance of the sensor by considering conductivity, hydrophilicity, viscoelasticity and morphology of the polymer composite nanofibers.

Synthesis, characterization and functionalization of silicon nanoparticle based hybrid nanomaterials for photovoltaic and biological applications

Science.gov (United States)

Xu, Zejing

Silicon nanoparticles are attractive candidates for biological, photovoltaic and energy storage applications due to their size dependent optoelectronic properties. These include tunable light emission, high brightness, and stability against photo-bleaching relative to organic dyes (see Chapter 1). The preparation and characterization of silicon nanoparticle based hybrid nanomaterials and their relevance to photovoltaic and biological applications are described. The surface-passivated silicon nanoparticles were produced in one step from the reactive high-energy ball milling (RHEBM) of silicon wafers with various organic ligands. The surface structure and optical properties of the passivated silicon nanoparticles were systematically characterized. Fast approaches for purifying and at the same time size separating the silicon nanoparticles using a gravity GPC column were developed. The hydrodynamic diameter and size distribution of these size-separated silicon nanoparticles were determined using GPC and Diffusion Ordered NMR Spectroscopy (DOSY) as fast, reliable alternative approaches to TEM. Water soluble silicon nanoparticles were synthesized by grafting PEG polymers onto functionalized silicon nanoparticles with distal alkyne or azide moieties. The surface-functionalized silicon nanoparticles were produced from the reactive high-energy ball milling (RHEBM) of silicon wafers with a mixture of either 5-chloro-1-pentyne in 1-pentyne or 1,7 octadiyne in 1-hexyne to afford air and water stable chloroalkyl or alkynyl terminated nanoparticles, respectively. Nanoparticles with the ω-chloroalkyl substituents were easily converted to ω-azidoalkyl groups through the reaction of the silicon nanoparticles with sodium azide in DMF. The azido terminated nanoparticles were then grafted with monoalkynyl-PEG polymers using a copper catalyzed alkyne-azide cycloaddition (CuAAC) reaction to afford core-shell silicon nanoparticles with a covalently attached PEG shell. Covalently

Limitations to laser machining of silicon using femtosecond micro-Bessel beams in the infrared

International Nuclear Information System (INIS)

Grojo, David; Mouskeftaras, Alexandros; Delaporte, Philippe; Lei, Shuting

2015-01-01

We produce and characterize high-angle femtosecond Bessel beams at 1300-nm wavelength leading to nonlinearly ionized plasma micro-channels in both glass and silicon. With microjoule pulse energy, we demonstrate controlled through-modifications in 150-μm glass substrates. In silicon, strong two-photon absorption leads to larger damages at the front surface but also a clamping of the intensity inside the bulk at a level of ≈4 × 10 11  W cm −2 which is below the threshold for volume and rear surface modification. We show that the intensity clamping is associated with a strong degradation of the Bessel-like profile. The observations highlight that the inherent limitation to ultrafast energy deposition inside semiconductors with Gaussian focusing [Mouskeftaras et al., Appl. Phys. Lett. 105, 191103 (2014)] applies also for high-angle Bessel beams

Optical modulation in silicon-vanadium dioxide photonic structures

Science.gov (United States)

Miller, Kevin J.; Hallman, Kent A.; Haglund, Richard F.; Weiss, Sharon M.

2017-08-01

All-optical modulators are likely to play an important role in future chip-scale information processing systems. In this work, through simulations, we investigate the potential of a recently reported vanadium dioxide (VO2) embedded silicon waveguide structure for ultrafast all-optical signal modulation. With a VO2 length of only 200 nm, finite-differencetime- domain simulations suggest broadband (200 nm) operation with a modulation greater than 12 dB and an insertion loss of less than 3 dB. Predicted performance metrics, including modulation speed, modulation depth, optical bandwidth, insertion loss, device footprint, and energy consumption of the proposed Si-VO2 all-optical modulator are benchmarked against those of current state-of-the-art all-optical modulators with in-plane optical excitation.

Compressed sensing and the reconstruction of ultrafast 2D NMR data: Principles and biomolecular applications.

Science.gov (United States)

Shrot, Yoav; Frydman, Lucio

2011-04-01

A topic of active investigation in 2D NMR relates to the minimum number of scans required for acquiring this kind of spectra, particularly when these are dictated by sampling rather than by sensitivity considerations. Reductions in this minimum number of scans have been achieved by departing from the regular sampling used to monitor the indirect domain, and relying instead on non-uniform sampling and iterative reconstruction algorithms. Alternatively, so-called "ultrafast" methods can compress the minimum number of scans involved in 2D NMR all the way to a minimum number of one, by spatially encoding the indirect domain information and subsequently recovering it via oscillating field gradients. Given ultrafast NMR's simultaneous recording of the indirect- and direct-domain data, this experiment couples the spectral constraints of these orthogonal domains - often calling for the use of strong acquisition gradients and large filter widths to fulfill the desired bandwidth and resolution demands along all spectral dimensions. This study discusses a way to alleviate these demands, and thereby enhance the method's performance and applicability, by combining spatial encoding with iterative reconstruction approaches. Examples of these new principles are given based on the compressed-sensed reconstruction of biomolecular 2D HSQC ultrafast NMR data, an approach that we show enables a decrease of the gradient strengths demanded in this type of experiments by up to 80%. Copyright © 2011 Elsevier Inc. All rights reserved.

Porous silicon-based direct hydrogen sulphide fuel cells.

Science.gov (United States)

Dzhafarov, T D; Yuksel, S Aydin

2011-10-01

In this paper, the use of Au/porous silicon/Silicon Schottky type structure, as a direct hydrogen sulphide fuel cell is demonstrated. The porous silicon filled with hydrochlorid acid was developed as a proton conduction membrane. The Au/Porous Silicon/Silicon cells were fabricated by first creating the porous silicon layer in single-crystalline Si using the anodic etching under illumination and then deposition Au catalyst layer onto the porous silicon. Using 80 mM H2S solution as fuel the open circuit voltage of 0.4 V was obtained and maximum power density of 30 W/m2 at room temperature was achieved. These results demonstrate that the Au/Porous Silicon/Silicon direct hydrogen sulphide fuel cell which uses H2S:dH2O solution as fuel and operates at room temperature can be considered as the most promising type of low cost fuel cell for small power-supply units.

Microstructure and lubricating property of ultra-fast laser pulse textured silicon carbide seals

Science.gov (United States)

Chen, Chien-Yu; Chung, Chung-Jen; Wu, Bo-Hsiung; Li, Wang-Long; Chien, Chih-Wei; Wu, Ping-Han; Cheng, Chung-Wei

2012-05-01

Most previous studies have employed surface patterning to improve the performance of lubrication systems. However, few have experimentally analyzed improved effects on friction reduction in SiC mechanical seals by ultra-fast laser pulse texturing. This work applies surface texturing on a non-contact mechanical seal and analyzes the characteristics of the resultant surface morphology. A femtosecond laser system is employed to fabricate micro/nanostructures on the SiC mechanical seal, and generates microscale-depth stripes and induces nanostructures on the seal surface. This work examines the morphology and cross section of the SiC nanostructures that correspond to the different scanning speeds of the laser pulse. Results show that varying the scanning speed enables the application of nanostructures of different amplitudes and widths on the surface of the seal. The friction coefficient of the introduced SiC full-textured seal is about 20% smaller than that of a conventional SiC mechanical seal. Hence, femtosecond laser texturing is effective and enables direct fabrication of the surface micro/nanostructures of SiC seals. This technique also serves as a potential approach to lubricating applications.

Microstructure and lubricating property of ultra-fast laser pulse textured silicon carbide seals

Energy Technology Data Exchange (ETDEWEB)

Chen, Chien-Yu.; Li, Wang-Long [National Cheng Kung University, Department of Materials Science and Engineering, Tainan, Taiwan (China); Chung, Chung-Jen; Wu, Bo-Hsiung [National Cheng Kung University, Center for Micro/Nano Science and Technology, Tainan, Taiwan (China); Chien, Chih-Wei; Wu, Ping-Han; Cheng, Chung-Wei [ITRI South, Industrial Technology, Research Institute, Laser Application Technology Center, Tainan, Taiwan (China)

2012-05-15

Most previous studies have employed surface patterning to improve the performance of lubrication systems. However, few have experimentally analyzed improved effects on friction reduction in SiC mechanical seals by ultra-fast laser pulse texturing. This work applies surface texturing on a non-contact mechanical seal and analyzes the characteristics of the resultant surface morphology. A femtosecond laser system is employed to fabricate micro/nanostructures on the SiC mechanical seal, and generates microscale-depth stripes and induces nanostructures on the seal surface. This work examines the morphology and cross section of the SiC nanostructures that correspond to the different scanning speeds of the laser pulse. Results show that varying the scanning speed enables the application of nanostructures of different amplitudes and widths on the surface of the seal. The friction coefficient of the introduced SiC full-textured seal is about 20% smaller than that of a conventional SiC mechanical seal. Hence, femtosecond laser texturing is effective and enables direct fabrication of the surface micro/nanostructures of SiC seals. This technique also serves as a potential approach to lubricating applications. (orig.)

Silicon based mechanic-photonic wavelength converter for infrared photo-detection

Science.gov (United States)

Rudnitsky, Arkady; Agdarov, Sergey; Gulitsky, Konstantin; Zalevsky, Zeev

2017-06-01

In this paper we present a new concept to realize a mechanic-photonic wavelength converter in silicon chip by construction of nanorods and by modulating the input illumination at temporal frequency matched to the mechanic resonance of the nanorods. The use case is to realize an infrared photo detector in silicon which is not based on absorption but rather on the mechanical interaction of the nanorods with the incoming illumination.

Ultrafast electron diffraction studies of optically excited thin bismuth films

International Nuclear Information System (INIS)

Rajkovic, Ivan

2008-01-01

This thesis contains work on the design and the realization of an experimental setup capable of providing sub-picosecond electron pulses for ultrafast electron diffraction experiments, and performing the study of ultrafast dynamics in bismuth after optical excitation using this setup. (orig.)

Ultrafast electron diffraction studies of optically excited thin bismuth films

Energy Technology Data Exchange (ETDEWEB)

Rajkovic, Ivan

2008-10-21

This thesis contains work on the design and the realization of an experimental setup capable of providing sub-picosecond electron pulses for ultrafast electron diffraction experiments, and performing the study of ultrafast dynamics in bismuth after optical excitation using this setup. (orig.)

Silicon-on-Insulator Nanowire Based Optical Waveguide Biosensors

International Nuclear Information System (INIS)

Li, Mingyu; Liu, Yong; Chen, Yangqing; He, Jian-Jun

2016-01-01

Optical waveguide biosensors based on silicon-on-insulator (SOI) nanowire have been developed for label free molecular detection. This paper reviews our work on the design, fabrication and measurement of SOI nanowire based high-sensitivity biosensors employing Vernier effect. Biosensing experiments using cascaded double-ring sensor and Mach-Zehnder- ring sensor integrated with microfluidic channels are demonstrated (paper)

High quality silicon-based substrates for microwave and millimeter wave passive circuits

Science.gov (United States)

Belaroussi, Y.; Rack, M.; Saadi, A. A.; Scheen, G.; Belaroussi, M. T.; Trabelsi, M.; Raskin, J.-P.

2017-09-01

Porous silicon substrate is very promising for next generation wireless communication requiring the avoidance of high-frequency losses originating from the bulk silicon. In this work, new variants of porous silicon (PSi) substrates have been introduced. Through an experimental RF performance, the proposed PSi substrates have been compared with different silicon-based substrates, namely, standard silicon (Std), trap-rich (TR) and high resistivity (HR). All of the mentioned substrates have been fabricated where identical samples of CPW lines have been integrated on. The new PSi substrates have shown successful reduction in the substrate's effective relative permittivity to values as low as 3.7 and great increase in the substrate's effective resistivity to values higher than 7 kΩ cm. As a concept proof, a mm-wave bandpass filter (MBPF) centred at 27 GHz has been integrated on the investigated substrates. Compared with the conventional MBPF implemented on standard silicon-based substrates, the measured S-parameters of the PSi-based MBPF have shown high filtering performance, such as a reduction in insertion loss and an enhancement of the filter selectivity, with the joy of having the same filter performance by varying the temperature. Therefore, the efficiency of the proposed PSi substrates has been well highlighted. From 1994 to 1995, she was assistant of physics at (USTHB), Algiers . From 1998 to 2011, she was a Researcher at characterization laboratory in ionized media and laser division at the Advanced Technologies Development Center. She has integrated the Analog Radio Frequency Integrated Circuits team as Researcher since 2011 until now in Microelectronic and Nanotechnology Division at Advanced Technologies Development Center (CDTA), Algiers. She has been working towards her Ph.D. degree jointly at CDTA and Ecole Nationale Polytechnique, Algiers, since 2012. Her research interest includes fabrication and characterization of microwave passive devices on porous

Resonator-Based Silicon Electro-Optic Modulator with Low Power Consumption

Science.gov (United States)

Xin, Maoqing; Danner, Aaron J.; Eng Png, Ching; Thor Lim, Soon

2009-04-01

This paper demonstrates, via simulation, an electro-optic modulator based on a subwavelength Fabry-Perot resonator cavity with low power consumption of 86 µW/µm. This is, to the best of our knowledge, the lowest power reported for silicon photonic bandgap modulators. The device is modulated at a doped p-i-n junction overlapping the cavity in a silicon waveguide perforated with etched holes, with the doping area optimized for minimum power consumption. The surface area of the entire device is only 2.1 µm2, which compares favorably to other silicon-based modulators. A modulation speed of at least 300 MHz is detected from the electrical simulator after sidewall doping is introduced which is suitable for sensing or fiber to the home (FTTH) technologies, where speed can be traded for low cost and power consumption. The device does not rely on ultra-high Q, and could serve as a sensor, modulator, or passive filter with built-in calibration.

Ultrafast Phase Comparator for Phase-Locked Loop-Based Optoelectronic Clock Recovery Systems

DEFF Research Database (Denmark)

Gomez-Agis, F.; Oxenløwe, Leif Katsuo; Kurimura, S.

2009-01-01

The authors report on a novel application of a chi((2)) nonlinear optical device as an ultrafast phase comparator, an essential element that allows an optoelectronic phase-locked loop to perform clock recovery of ultrahigh-speed optical time-division multiplexed (OTDM) signals. Particular interest...... is devoted to a quasi-phase-matching adhered-ridge-waveguide periodically poled lithium niobate (PPLN) device, which shows a sufficient high temporal resolution to resolve a 640 Gbits OTDM signal....

Mechanochemical approaches to employ silicon as a lithium-ion battery anode

International Nuclear Information System (INIS)

Shimoi, Norihiro; Bahena-Garrido, Sharon; Tanaka, Yasumitsu; Qiwu, Zhang

2015-01-01

Silicon is essential as an active material in lithium-ion batteries because it provides both high-charge and optimal cycle characteristics. The authors attempted to realize a composite by a simple mechanochemical grinding approach of individual silicon (Si) particles and copper monoxide (CuO) particles to serve as an active material in the anode and optimize the charge-discharge characteristics of a lithium-ion battery. The composite with Si and CuO allowed for a homogenous dispersion with nano-scale Si grains, nano-scale copper-silicon alloy grains and silicon monoxide oxidized the oxide from CuO. The authors successfully achieved the synthesis of an active composite unites the structural features of an active material based on silicon composite as an anode in Li-ion battery with high capacity and cyclic reversible charge properties of 3256 mAh g −1 after 200 cycles

Ultrafast and Doppler-free femtosecondoptical ranging based on dispersivefrequency-modulated interferometry.

Science.gov (United States)

Xia, Haiyun; Zhang, Chunxi

2010-03-01

An ultrafast and Doppler-free optical ranging system based on dispersive frequency-modulated interferometry is demonstrated. The principle is similar to the conventional frequency-modulated continuous-wave interferometry where the range information is derived from the beat frequency between the object signal and the reference signal. However, a passive and static frequency scanning is performed based on the chromatic dispersion of a transform-limited femtosecond pulse in the time domain. We point out that the unbalanced dispersion introduced in the Mach-Zehnder interferometer can be optimized to eliminate the frequency chirp in the temporal interferograms pertaining to the third order dispersion of the all-fiber system, if the dynamic range being considered is small. Some negative factors, such as the polarization instability of the femtosecond pulse, the power fluctuation of the optical signal and the nonuniform gain spectrum of the erbium-doped fiber amplifier lead to an obvious envelope deformation of the temporal interferograms from the Gaussian shape. Thus a new data processing method is proposed to guarantee the range resolution. In the experiment, the vibration of a speaker is measured. A range resolution of 1.59 microm is achieved with an exposure time of 394 fs at a sampling rate of 48.6 MHz.

High temperature corrosion of silicon carbide and silicon nitride in the presence of chloride compound

International Nuclear Information System (INIS)

McNallan, M.

1993-01-01

Silicon carbide and silicon nitride are resistant to oxidation because a protective silicon dioxide films on their surfaces in most oxidizing environments. Chloride compounds can attack the surface in two ways: 1) chlorine can attack the silicon directly to form a volatile silicon chloride compound or 2) alkali compounds combined with the chlorine can be transported to the surface where they flux the silica layer by forming stable alkali silicates. Alkali halides have enough vapor pressure that a sufficient quantity of alkali species to cause accelerated corrosion can be transported to the ceramic surface without the formation of a chloride deposit. When silicon carbide is attacked simultaneously by chlorine and oxygen, the corrosion products include both volatile and condensed spices. Silicon nitride is much more resistance to this type of attack than silicon carbide. Silicon based ceramics are exposed to oxidizing gases in the presence of alkali chloride vapors, the rate of corrosion is controlled primarily by the driving force for the formation of alkali silicate, which can be quantified as the activity of the alkali oxide in equilibrium with the corrosive gas mixture. In a gas mixture containing a fixed partial pressure of KCl, the rate of corrosion is accelerated by increasing the concentration of water vapor and inhibited by increasing the concentration of HCl. Similar results have been obtained for mixtures containing other alkalis and halogens. (Orig./A.B.)

Enhancing the Efficiency of Silicon-Based Solar Cells by the Piezo-Phototronic Effect.

Science.gov (United States)

Zhu, Laipan; Wang, Longfei; Pan, Caofeng; Chen, Libo; Xue, Fei; Chen, Baodong; Yang, Leijing; Su, Li; Wang, Zhong Lin

2017-02-28

Although there are numerous approaches for fabricating solar cells, the silicon-based photovoltaics are still the most widely used in industry and around the world. A small increase in the efficiency of silicon-based solar cells has a huge economic impact and practical importance. We fabricate a silicon-based nanoheterostructure (p + -Si/p-Si/n + -Si (and n-Si)/n-ZnO nanowire (NW) array) photovoltaic device and demonstrate the enhanced device performance through significantly enhanced light absorption by NW array and effective charge carrier separation by the piezo-phototronic effect. The strain-induced piezoelectric polarization charges created at n-doped Si-ZnO interfaces can effectively modulate the corresponding band structure and electron gas trapped in the n + -Si/n-ZnO NW nanoheterostructure and thus enhance the transport process of local charge carriers. The efficiency of the solar cell was improved from 8.97% to 9.51% by simply applying a static compress strain. This study indicates that the piezo-phototronic effect can enhance the performance of a large-scale silicon-based solar cell, with great potential for industrial applications.

Progress in ultrafast intense laser science XI

CERN Document Server

Yamanouchi, Kaoru; Martin, Philippe

2014-01-01

The PUILS series delivers up-to-date reviews of progress in Ultrafast Intense Laser Science, a newly emerging interdisciplinary research field spanning atomic and molecular physics, molecular science and optical science, which has been stimulated by the recent developments in ultrafast laser technologies. Each volume compiles peer-reviewed articles authored by researchers at the forefront of each their own subfields of UILS. Every chapter opens with an overview of the topics to be discussed, so that researchers unfamiliar to the subfield, as well as graduate students, can grasp the importance

Progress in Ultrafast Intense Laser Science II

CERN Document Server

Yamanouchi, Kaoru; Agostini, Pierre; Ferrante, Gaetano

2007-01-01

This book series addresses a newly emerging interdisciplinary research field, Ultrafast Intense Laser Science, spanning atomic and molecular physics, molecular science, and optical science. Its progress is being stimulated by the recent development of ultrafast laser technologies. Highlights of this second volume include Coulomb explosion and fragmentation of molecules, control of chemical dynamics, high-order harmonic generation, propagation and filamentation, and laser-plasma interaction. All chapters are authored by foremost experts in their fields and the texts are written at a level accessible to newcomers and graduate students, each chapter beginning with an introductory overview.

Measurements of timing resolution of ultra-fast silicon detectors with the SAMPIC waveform digitizer

Energy Technology Data Exchange (ETDEWEB)

Breton, D. [CNRS/IN2P3/LAL Orsay, Université Paris-Saclay, F-91898 Orsay (France); De Cacqueray, V.; Delagnes, E. [IRFU, CEA, Université Paris-Saclay, F-91191 Gif-sur-Yvette (France); Grabas, H. [Santa Cruz Institute for Particle Physics UC Santa Cruz, CA 95064 (United States); Maalmi, J. [CNRS/IN2P3/LAL Orsay, Université Paris-Saclay, F-91898 Orsay (France); Minafra, N. [Dipartimento Interateneo di Fisica di Bari, Bari (Italy); CERN, Geneva (Switzerland); Royon, C. [University of Kansas, Lawrence (United States); Saimpert, M., E-mail: matthias.saimpert@cern.ch [IRFU, CEA, Université Paris-Saclay, F-91191 Gif-sur-Yvette (France)

2016-11-01

The SAMpler for PICosecond time (SAMPIC) chip has been designed by a collaboration including CEA/IRFU/SEDI, Saclay and CNRS/LAL/SERDI, Orsay. It benefits from both the quick response of a time to digital converter and the versatility of a waveform digitizer to perform accurate timing measurements. Thanks to the sampled signals, smart algorithms making best use of the pulse shape can be used to improve time resolution. A software framework has been developed to analyse the SAMPIC output data and extract timing information by using either a constant fraction discriminator or a fast cross-correlation algorithm. SAMPIC timing capabilities together with the software framework have been tested using pulses generated by a signal generator or by a silicon detector illuminated by a pulsed infrared laser. Under these ideal experimental conditions, the SAMPIC chip has proven to be capable of timing resolutions down to 4 ps with synthesized signals and 40 ps with silicon detector signals.

Novel Concepts for Silicon Based Photovoltaics and Photoelectrochemistry

NARCIS (Netherlands)

Han, L.

2015-01-01

Long term concerns about climate change and fossil fuel depletion will require a transition towards energy systems powered by solar radiation or other renewable sources. Novel concepts based on silicon materials and devices are investigated for applications in the next generation photovoltaic (PV)

Mega-electron-volt ultrafast electron diffraction at SLAC National Accelerator Laboratory

Energy Technology Data Exchange (ETDEWEB)

Weathersby, S. P.; Brown, G.; Chase, T. F.; Coffee, R.; Corbett, J.; Eichner, J. P.; Frisch, J. C.; Fry, A. R.; Gühr, M.; Hartmann, N.; Hast, C.; Hettel, R.; Jobe, R. K.; Jongewaard, E. N.; Lewandowski, J. R.; Li, R. K., E-mail: lrk@slac.stanford.edu; Lindenberg, A. M.; Makasyuk, I.; May, J. E.; McCormick, D. [SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); and others

2015-07-15

Ultrafast electron probes are powerful tools, complementary to x-ray free-electron lasers, used to study structural dynamics in material, chemical, and biological sciences. High brightness, relativistic electron beams with femtosecond pulse duration can resolve details of the dynamic processes on atomic time and length scales. SLAC National Accelerator Laboratory recently launched the Ultrafast Electron Diffraction (UED) and microscopy Initiative aiming at developing the next generation ultrafast electron scattering instruments. As the first stage of the Initiative, a mega-electron-volt (MeV) UED system has been constructed and commissioned to serve ultrafast science experiments and instrumentation development. The system operates at 120-Hz repetition rate with outstanding performance. In this paper, we report on the SLAC MeV UED system and its performance, including the reciprocal space resolution, temporal resolution, and machine stability.

The First JFET-based Silicon Carbide Active Pixel Sensor UV Imager, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Solar-blind ultraviolet (UV) imaging is critically important in the fields of space astronomy, national defense, and bio-chemistry. United Silicon Carbide, Inc....

Angle-resolved diffraction grating biosensor based on porous silicon

Energy Technology Data Exchange (ETDEWEB)

Lv, Changwu; Li, Peng [School of Physical Science and Technology, Xinjiang University, Urumqi 830046 (China); Jia, Zhenhong, E-mail: jzhh@xju.edu.cn; Liu, Yajun; Mo, Jiaqing; Lv, Xiaoyi [College of Information Science and Engineering, Xinjiang University, Urumqi 830046 (China)

2016-03-07

In this study, an optical biosensor based on a porous silicon composite structure was fabricated using a simple method. This structure consists of a thin, porous silicon surface diffraction grating and a one-dimensional porous silicon photonic crystal. An angle-resolved diffraction efficiency spectrum was obtained by measuring the diffraction efficiency at a range of incident angles. The angle-resolved diffraction efficiency of the 2nd and 3rd orders was studied experimentally and theoretically. The device was sensitive to the change of refractive index in the presence of a biomolecule indicated by the shift of the diffraction efficiency spectrum. The sensitivity of this sensor was investigated through use of an 8 base pair antifreeze protein DNA hybridization. The shifts of the angle-resolved diffraction efficiency spectrum showed a relationship with the change of the refractive index, and the detection limit of the biosensor reached 41.7 nM. This optical device is highly sensitive, inexpensive, and simple to fabricate. Using shifts in diffraction efficiency spectrum to detect biological molecules has not yet been explored, so this study establishes a foundation for future work.

Robust Stacking-Independent Ultrafast Charge Transfer in MoS2/WS2 Bilayers.

Science.gov (United States)

Ji, Ziheng; Hong, Hao; Zhang, Jin; Zhang, Qi; Huang, Wei; Cao, Ting; Qiao, Ruixi; Liu, Can; Liang, Jing; Jin, Chuanhong; Jiao, Liying; Shi, Kebin; Meng, Sheng; Liu, Kaihui

2017-12-26

Van der Waals-coupled two-dimensional (2D) heterostructures have attracted great attention recently due to their high potential in the next-generation photodetectors and solar cells. The understanding of charge-transfer process between adjacent atomic layers is the key to design optimal devices as it directly determines the fundamental response speed and photon-electron conversion efficiency. However, general belief and theoretical studies have shown that the charge transfer behavior depends sensitively on interlayer configurations, which is difficult to control accurately, bringing great uncertainties in device designing. Here we investigate the ultrafast dynamics of interlayer charge transfer in a prototype heterostructure, the MoS 2 /WS 2 bilayer with various stacking configurations, by optical two-color ultrafast pump-probe spectroscopy. Surprisingly, we found that the charge transfer is robust against varying interlayer twist angles and interlayer coupling strength, in time scale of ∼90 fs. Our observation, together with atomic-resolved transmission electron characterization and time-dependent density functional theory simulations, reveals that the robust ultrafast charge transfer is attributed to the heterogeneous interlayer stretching/sliding, which provides additional channels for efficient charge transfer previously unknown. Our results elucidate the origin of transfer rate robustness against interlayer stacking configurations in optical devices based on 2D heterostructures, facilitating their applications in ultrafast and high-efficient optoelectronic and photovoltaic devices in the near future.

Novel Electrosorption-Enhanced Solid-Phase Microextraction Device for Ultrafast In Vivo Sampling of Ionized Pharmaceuticals in Fish.

Science.gov (United States)

Qiu, Junlang; Wang, Fuxin; Zhang, Tianlang; Chen, Le; Liu, Yuan; Zhu, Fang; Ouyang, Gangfeng

2018-01-02

Decreasing the tedious sample preparation duration is one of the most important concerns for the environmental analytical chemistry especially for in vivo experiments. However, due to the slow mass diffusion paths for most of the conventional methods, ultrafast in vivo sampling remains challenging. Herein, for the first time, we report an ultrafast in vivo solid-phase microextraction (SPME) device based on electrosorption enhancement and a novel custom-made CNT@PPY@pNE fiber for in vivo sampling of ionized acidic pharmaceuticals in fish. This sampling device exhibited an excellent robustness, reproducibility, matrix effect-resistant capacity, and quantitative ability. Importantly, the extraction kinetics of the targeted ionized pharmaceuticals were significantly accelerated using the device, which significantly improved the sensitivity of the SPME in vivo sampling method (limits of detection ranged from 0.12 ng·g -1 to 0.25 ng·g -1 ) and shorten the sampling time (only 1 min). The proposed approach was successfully applied to monitor the concentrations of ionized pharmaceuticals in living fish, which demonstrated that the device and fiber were suitable for ultrafast in vivo sampling and continuous monitoring. In addition, the bioconcentration factor (BCF) values of the pharmaceuticals were derived in tilapia (Oreochromis mossambicus) for the first time, based on the data of ultrafast in vivo sampling. Therefore, we developed and validated an effective and ultrafast SPME sampling device for in vivo sampling of ionized analytes in living organisms and this state-of-the-art method provides an alternative technique for future in vivo studies.

Solidification phenomena in nickel base brazes containing boron and silicon

International Nuclear Information System (INIS)

Tung, S.K.; Lim, L.C.; Lai, M.O.

1996-01-01

Nickel base brazes containing boron and/or silicon as melting point depressants are used extensively in the repair and joining of aero-engine hot-section components. These melting point depressants form hard and brittle intermetallic compounds with nickel which are detrimental to the mechanical properties of brazed joints. The present investigation studied the microstructural evolution in nickel base brazes containing boron and/or silicon as melting point depressant(s) in simple systems using nickel as the base metal. The basic metallurgical reactions and formation of intermetallic compounds uncovered in these systems will be useful as a guide in predicting the evolution of microstructures in similar brazes in more complex systems involving base metals of nickel base superalloys. The four filler metal systems investigated in this study are: Ni-Cr-Si; Ni-Cr-B; Ni-Si-B and Ni-Cr-Fe-Si-B

Silicon-germanium and platinum silicide nanostructures for silicon based photonics

Science.gov (United States)

Storozhevykh, M. S.; Dubkov, V. P.; Arapkina, L. V.; Chizh, K. V.; Mironov, S. A.; Chapnin, V. A.; Yuryev, V. A.

2017-05-01

This paper reports a study of two types of silicon based nanostructures prospective for applications in photonics. The first ones are Ge/Si(001) structures forming at room temperature and reconstructing after annealing at 600°C. Germanium, being deposited from a molecular beam at room temperature on the Si(001) surface, forms a thin granular film composed of Ge particles with sizes of a few nanometers. A characteristic feature of these films is that they demonstrate signs of the 2 x 1 structure in their RHEED patterns. After short-term annealing at 600°C under the closed system conditions, the granular films reconstruct to heterostructures consisting of a Ge wetting layer and oval clusters of Ge. A mixed type c(4x2) + p(2x2) reconstruction typical to the low-temperature MBE (Tgr Ge. The other type of the studied nanostructures is based on Pt silicides. This class of materials is one of the friendliest to silicon technology. But as silicide film thickness reaches a few nanometers, low resistivity becomes of primary importance. Pt3Si has the lowest sheet resistance among the Pt silicides. However, the development of a process of thin Pt3Si films formation is a challenging task. This paper describes formation of a thin Pt3Si/Pt2Si structures at room temperature on poly-Si films. Special attention is paid upon formation of poly-Si and amorphous Si films on Si3N4 substrates at low temperatures.

Vapor phase epitaxy of silicon on meso porous silicon for deposition on economical substrate and low cost photovoltaic application

International Nuclear Information System (INIS)

Quoizola, S.

2003-01-01

The silicon is more and more used in the industry. Meanwhile the production cost is a problem to solve to develop the photovoltaic cells production. This thesis presents a new technology based on the use of a meso-porous silicon upper layer,to grow the active silicon layer of 50 μm width. The photovoltaic cell is then realized, the device is removed and placed on a low cost substrate. The silicon substrate of beginning can be used again after cleaning. The first chapter presents the operating and the characteristics of the silicon photovoltaic cell. The second chapter is devoted to the growth technique, the vapor phase epitaxy, and the third chapter to the epitaxy layer. The chapter four deals with the porous silicon and the structure chosen in this study. The chapter five is devoted to the characterization of the epitaxy layer on porous silicon. The photovoltaic cells realized on these layers are presented in the last chapter. (A.L.B.)

Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

Science.gov (United States)

Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor)

2005-01-01

Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

The First JFET-Based Silicon Carbide Active Pixel Sensor UV Imager, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — Solar-blind ultraviolet (UV) imaging is needed in the fields of astronomy, national defense, and bio-chemistry. United Silicon Carbide, Inc. proposes to develop a...

Fast neutron dosimeter with wide base silicon diode

International Nuclear Information System (INIS)

Ma Lu

1986-01-01

This paper briefly introduces a wide base silicon diode fast neutron dosimeter with wide measuring range and good energy response to fast neutron. It is suitable to be used to detect fast neutrons in the mixed field of γ-ray, thermal neutrons and fast neutrons

Precision machining of pig intestine using ultrafast laser pulses

Science.gov (United States)

Beck, Rainer J.; Góra, Wojciech S.; Carter, Richard M.; Gunadi, Sonny; Jayne, David; Hand, Duncan P.; Shephard, Jonathan D.

2015-07-01

Endoluminal surgery for the treatment of early stage colorectal cancer is typically based on electrocautery tools which imply restrictions on precision and the risk of harm through collateral thermal damage to the healthy tissue. As a potential alternative to mitigate these drawbacks we present laser machining of pig intestine by means of picosecond laser pulses. The high intensities of an ultrafast laser enable nonlinear absorption processes and a predominantly nonthermal ablation regime. Laser ablation results of square cavities with comparable thickness to early stage colorectal cancers are presented for a wavelength of 1030 nm using an industrial picosecond laser. The corresponding histology sections exhibit only minimal collateral damage to the surrounding tissue. The depth of the ablation can be controlled precisely by means of the pulse energy. Overall, the application of ultrafast lasers to ablate pig intestine enables significantly improved precision and reduced thermal damage to the surrounding tissue compared to conventional techniques.

Active phase correction of high resolution silicon photonic arrayed waveguide gratings.

Science.gov (United States)

Gehl, M; Trotter, D; Starbuck, A; Pomerene, A; Lentine, A L; DeRose, C

2017-03-20

Arrayed waveguide gratings provide flexible spectral filtering functionality for integrated photonic applications. Achieving narrow channel spacing requires long optical path lengths which can greatly increase the footprint of devices. High index contrast waveguides, such as those fabricated in silicon-on-insulator wafers, allow tight waveguide bends which can be used to create much more compact designs. Both the long optical path lengths and the high index contrast contribute to significant optical phase error as light propagates through the device. Therefore, silicon photonic arrayed waveguide gratings require active or passive phase correction following fabrication. Here we present the design and fabrication of compact silicon photonic arrayed waveguide gratings with channel spacings of 50, 10 and 1 GHz. The largest device, with 11 channels of 1 GHz spacing, has a footprint of only 1.1 cm2. Using integrated thermo-optic phase shifters, the phase error is actively corrected. We present two methods of phase error correction and demonstrate state-of-the-art cross-talk performance for high index contrast arrayed waveguide gratings. As a demonstration of possible applications, we perform RF channelization with 1 GHz resolution. Additionally, we generate unique spectral filters by applying non-zero phase offsets calculated by the Gerchberg Saxton algorithm.

An in Vitro Experimental Study on the Antimicrobial Activity of Silicone Oil against Anaerobic Bacteria.

Science.gov (United States)

Arici, Ceyhun; Aras, Cengiz; Tokman, Hrisi Bahar; Torun, Muzeyyen Mamal

2016-01-01

To investigate the in vitro antimicrobial activity of silicone oil against anaerobic agents, specifically Propionibacterium acnes, Peptostreptococcus spp., Peptostreptococcus anaerobius, Bacteroides fragilis, Fuobacterium spp., and Clostridium tertium. A 0.5 McFarland turbidity of Propionibacterium acnes, Peptostreptococcus spp., Peptostreptococcus anaerobius, Bacteroides fragilis, Fuobacterium spp., and Clostridium tertium was prepared, and 0.1 mL was inoculated into 0.9 mL of silicone oil. Control inoculations were performed in anaerobic blood agar and fluid thioglycollate medium without silicone oil. Propionibacterium acnes retained their viability on the 3rd day in the presence of silicone oil. In total, 9.7 × 10(6) colonies were enumerated from 1 mL of silicone oil. After a prolonged incubation of 7 days, the number of colonies observed was 9.2 × 10(6). The other bacteria disappeared after the 3rd day of incubation in silicone oil. Propionibacterium acnes, which is the most common chronic postoperative endophthalmitis agent, is thought to be resistant to silicone oil.

Single-Event Effects in Silicon and Silicon Carbide Power Devices

Science.gov (United States)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2014-01-01

NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

Silicon Microspheres Photonics

International Nuclear Information System (INIS)

Serpenguzel, A.

2008-01-01

Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

Semiconductors and semimetals oxygen in silicon

CERN Document Server

Willardson, Robert K; Beer, Albert C; Shimura, Fumio

1994-01-01

This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen.Key Features* Comprehensive study of the behavior of oxygen in silicon* Discusses silicon crystals for VLSI and ULSI applications* Thorough coverage from crystal growth to device fabrication* Edited by technical experts in the field* Written by recognized authorities from industrial and academic institutions* Useful to graduate students, scientists in other disciplines, and active participants in the arena of silicon-based microelectronics research* 297 original line drawings

Magneto-optical non-reciprocal devices in silicon photonics

Directory of Open Access Journals (Sweden)

Yuya Shoji

2014-01-01

Full Text Available Silicon waveguide optical non-reciprocal devices based on the magneto-optical effect are reviewed. The non-reciprocal phase shift caused by the first-order magneto-optical effect is effective in realizing optical non-reciprocal devices in silicon waveguide platforms. In a silicon-on-insulator waveguide, the low refractive index of the buried oxide layer enhances the magneto-optical phase shift, which reduces the device footprints. A surface activated direct bonding technique was developed to integrate a magneto-optical garnet crystal on the silicon waveguides. A silicon waveguide optical isolator based on the magneto-optical phase shift was demonstrated with an optical isolation of 30 dB and insertion loss of 13 dB at a wavelength of 1548 nm. Furthermore, a four port optical circulator was demonstrated with maximum isolations of 15.3 and 9.3 dB in cross and bar ports, respectively, at a wavelength of 1531 nm.

Fabrication and Characterization of Nanopillars for Silicon-Based Thermoelectrics

Science.gov (United States)

Stranz, A.; Sökmen, Ü.; Wehmann, H.-H.; Waag, A.; Peiner, E.

2010-09-01

Si-based nanopillars of various sizes were fabricated by lateral structuring using anisotropic etching and thermal oxidation. We obtained pillars of diameter <500 nm, about 25 μm in height, with an aspect ratio of more than 50. The distance between pillars was varied from 500 nm to 10 μm. Besides the fabrication and structural characterization of silicon nanopillars, implementation of adequate metrology for measuring single pillars is described. Commercial tungsten probes, self-made gold probes, and piezoresistive silicon cantilever probes were used for measurements of nanopillars in a scanning electron microscope (SEM) equipped with nanomanipulators.

Quadruple-Junction Thin-Film Silicon-Based Solar Cells

NARCIS (Netherlands)

Si, F.T.

2017-01-01

The direct utilization of sunlight is a critical energy source in a sustainable future. One of the options is to convert the solar energy into electricity using thin-film silicon-based solar cells (TFSSCs). Solar cells in a triple-junction configuration have exhibited the highest energy conversion

Activation of boron and phosphorus atoms implanted in polycrystalline silicon films at low temperatures

International Nuclear Information System (INIS)

Andoh, Nobuyuki; Sameshima, Toshiyuki; Andoh, Yasunori

2005-01-01

Phosphorus atoms implanted in laser crystallized polycrystalline silicon films were activated by a heat treatment in air at 260 deg. C for 1, 3 and 24 h. Analysis of ultraviolet reflectivity of phosphorus-doped silicon films implanted by ion doping method at 4 keV revealed that the thickness of the top disordered layer formed by ion bombardment was 6 nm. It is reduced to 4 nm by a 3 h heat treatment at 260 deg. C by recrystallization of disordered region. The electrical conductance of silicon films implanted increased to 1.7x10 5 S/sq after 3 h heat treatment

Ultrafast optical signal processing using semiconductor quantum dot amplifiers

DEFF Research Database (Denmark)

Berg, Tommy Winther; Mørk, Jesper

2002-01-01

The linear and nonlinear properties of quantum dot amplifiers are discussed on the basis of an extensive theoretical model. These devices show great potential for linear amplification as well as ultrafast signal processing.......The linear and nonlinear properties of quantum dot amplifiers are discussed on the basis of an extensive theoretical model. These devices show great potential for linear amplification as well as ultrafast signal processing....

Nonlinear silicon photonics

Science.gov (United States)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

Ultrafast geometric control of a single qubit using chirped pulses

International Nuclear Information System (INIS)

Hawkins, Patrick E; Malinovskaya, Svetlana A; Malinovsky, Vladimir S

2012-01-01

We propose a control strategy to perform arbitrary unitary operations on a single qubit based solely on the geometrical phase that the qubit state acquires after cyclic evolution in the parameter space. The scheme uses ultrafast linearly chirped pulses and provides the possibility of reducing the duration of a single-qubit operation to a few picoseconds.

Ultrafast Thermal Transport at Interfaces

Energy Technology Data Exchange (ETDEWEB)

Cahill, David [Univ. of Illinois, Champaign, IL (United States); Murphy, Catherine [Univ. of Illinois, Champaign, IL (United States); Martin, Lane [Univ. of Illinois, Champaign, IL (United States)

2014-10-21

Our research program on Ultrafast Thermal Transport at Interfaces advanced understanding of the mesoscale science of heat conduction. At the length and time scales of atoms and atomic motions, energy is transported by interactions between single-particle and collective excitations. At macroscopic scales, entropy, temperature, and heat are the governing concepts. Key gaps in fundamental knowledge appear at the transitions between these two regimes. The transport of thermal energy at interfaces plays a pivotal role in these scientific issues. Measurements of heat transport with ultrafast time resolution are needed because picoseconds are the fundamental scales where the lack of equilibrium between various thermal excitations becomes a important factor in the transport physics. A critical aspect of our work has been the development of experimental methods and model systems that enabled more precise and sensitive investigations of nanoscale thermal transport.

Assessing neutron generator output using neutron activation of silicon

International Nuclear Information System (INIS)

Kehayias, Pauli M.; Kehayias, Joseph J.

2007-01-01

D-T neutron generators are used for elemental composition analysis and medical applications. Often composition is determined by examining elemental ratios in which the knowledge of the neutron flux is unnecessary. However, the absolute value of the neutron flux is required when the generator is used for neutron activation analysis, to study radiation damage to materials, to monitor the operation of the generator, and to measure radiation exposure. We describe a method for absolute neutron output and flux measurements of low output D-T neutron generators using delayed activation of silicon. We irradiated a series of silicon oxide samples with 14.1 MeV neutrons and counted the resulting gamma rays of the 28 Al nucleus with an efficiency-calibrated detector. To minimize the photon self-absorption effects within the samples, we used a zero-thickness extrapolation technique by repeating the measurement with samples of different thicknesses. The neutron flux measured 26 cm away from the tritium target of a Thermo Electron A-325 D-T generator (Thermo Electron Corporation, Colorado Springs, CO) was 6.2 x 10 3 n/s/cm 2 ± 5%, which is consistent with the manufacturer's specifications

Assessing neutron generator output using neutron activation of silicon

Energy Technology Data Exchange (ETDEWEB)

Kehayias, Pauli M. [Body Composition Laboratory, Jean Mayer United States Department of Agriculture Human Nutrition Research Center on Aging, Tufts University, Boston, MA 02111 (United States); Kehayias, Joseph J. [Body Composition Laboratory, Jean Mayer United States Department of Agriculture Human Nutrition Research Center on Aging, Tufts University, Boston, MA 02111 (United States)]. E-mail: joseph.kehayias@tufts.edu

2007-08-15

D-T neutron generators are used for elemental composition analysis and medical applications. Often composition is determined by examining elemental ratios in which the knowledge of the neutron flux is unnecessary. However, the absolute value of the neutron flux is required when the generator is used for neutron activation analysis, to study radiation damage to materials, to monitor the operation of the generator, and to measure radiation exposure. We describe a method for absolute neutron output and flux measurements of low output D-T neutron generators using delayed activation of silicon. We irradiated a series of silicon oxide samples with 14.1 MeV neutrons and counted the resulting gamma rays of the {sup 28}Al nucleus with an efficiency-calibrated detector. To minimize the photon self-absorption effects within the samples, we used a zero-thickness extrapolation technique by repeating the measurement with samples of different thicknesses. The neutron flux measured 26 cm away from the tritium target of a Thermo Electron A-325 D-T generator (Thermo Electron Corporation, Colorado Springs, CO) was 6.2 x 10{sup 3} n/s/cm{sup 2} {+-} 5%, which is consistent with the manufacturer's specifications.

Effects of the Formulations of Silicon-Based Composite Anodes on their Mechanical, Storage, and Electrochemical Properties.

Science.gov (United States)

Assresahegn, Birhanu Desalegn; Bélanger, Daniel

2017-10-23

In this work, the effects of the formulation of silicon-based composite anodes on their mechanical, storage, and electrochemical properties were investigated. The electrode formulation was changed through the use of hydrogenated or modified (through the covalent attachment of a binding additive such as polyacrylic acid) silicon and acetylene black or graphene sheets as conducting additives. A composite anode with a covalently grafted binder had the highest elongation without breakages and strong adhesion to the current collector. These mechanical properties depend significantly on the conductive carbon additive used and the use of graphene sheets instead of acetylene black can improve elongation and adhesion significantly. After 180 days of storage under ambient conditions, the electronic conductivity and discharge capacity of the modified silicon electrode showed much smaller decreases in these properties than those of the hydrogenated silicon composite electrode, indicating that the modification can result in passivation and a constant composition of the active material. Moreover, the composite Si anode has a high packing density. Consequently, thin-film electrodes with very high material loadings can be prepared without decreased electrochemical performance. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

CHARACTERIZATION OF A THIN SILICON SENSOR FOR ACTIVE NEUTRON PERSONAL DOSEMETERS.

Science.gov (United States)

Takada, M; Nunomiya, T; Nakamura, T; Matsumoto, T; Masuda, A

2016-09-01

A thin silicon sensor has been developed for active neutron personal dosemeters for use by aircrews and first responders. This thin silicon sensor is not affected by the funneling effect, which causes detection of cosmic protons and over-response to cosmic neutrons. There are several advantages to the thin silicon sensor: a decrease in sensitivity to gamma rays, an improvement of the energy detection limit for neutrons down to 0.8 MeV and an increase in the sensitivity to fast neutrons. Neutron response functions were experimentally obtained using 2.5 and 5 MeV monoenergy neutron beams and a (252)Cf neutron source. Simulation results using the Monte Carlo N-Particle transport code agree quite well with the experimental ones when an energy deposition region shaped like a circular truncated cone is used in place of a cylindrical region. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Periodically poled silicon

Science.gov (United States)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

2010-02-01

Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

Ultrafast ultrasound localization microscopy for deep super-resolution vascular imaging

Science.gov (United States)

Errico, Claudia; Pierre, Juliette; Pezet, Sophie; Desailly, Yann; Lenkei, Zsolt; Couture, Olivier; Tanter, Mickael

2015-11-01

Non-invasive imaging deep into organs at microscopic scales remains an open quest in biomedical imaging. Although optical microscopy is still limited to surface imaging owing to optical wave diffusion and fast decorrelation in tissue, revolutionary approaches such as fluorescence photo-activated localization microscopy led to a striking increase in resolution by more than an order of magnitude in the last decade. In contrast with optics, ultrasonic waves propagate deep into organs without losing their coherence and are much less affected by in vivo decorrelation processes. However, their resolution is impeded by the fundamental limits of diffraction, which impose a long-standing trade-off between resolution and penetration. This limits clinical and preclinical ultrasound imaging to a sub-millimetre scale. Here we demonstrate in vivo that ultrasound imaging at ultrafast frame rates (more than 500 frames per second) provides an analogue to optical localization microscopy by capturing the transient signal decorrelation of contrast agents—inert gas microbubbles. Ultrafast ultrasound localization microscopy allowed both non-invasive sub-wavelength structural imaging and haemodynamic quantification of rodent cerebral microvessels (less than ten micrometres in diameter) more than ten millimetres below the tissue surface, leading to transcranial whole-brain imaging within short acquisition times (tens of seconds). After intravenous injection, single echoes from individual microbubbles were detected through ultrafast imaging. Their localization, not limited by diffraction, was accumulated over 75,000 images, yielding 1,000,000 events per coronal plane and statistically independent pixels of ten micrometres in size. Precise temporal tracking of microbubble positions allowed us to extract accurately in-plane velocities of the blood flow with a large dynamic range (from one millimetre per second to several centimetres per second). These results pave the way for deep non

Ultrafast vibrations of gold nanorings

DEFF Research Database (Denmark)

Kelf, T; Tanaka, Y; Matsuda, O

2011-01-01

We investigate the vibrational modes of gold nanorings on a silica substrate with an ultrafast optical technique. By comparison with numerical simulations, we identify several resonances in the gigahertz range associated with axially symmetric deformations of the nanoring and substrate. We...

Ultrafast Spectroscopy of Semiconductor Devices

DEFF Research Database (Denmark)

Borri, Paola; Langbein, Wolfgang; Hvam, Jørn Marcher

1999-01-01

In this work we present an experimental technique for investigating ultrafast carrier dynamics in semiconductor optical amplifiers at room temperature. These dynamics, influenced by carrier heating, spectral hole-burning and two-photon absorption, are very important for device applications in inf...

Novel Non-Carbonate Based Electrolytes for Silicon Anodes

Energy Technology Data Exchange (ETDEWEB)

Zhu, Ye [Wildcat Discovery Technologies, San Diego, CA (United States); Yang, Johnny [Wildcat Discovery Technologies, San Diego, CA (United States); Cheng, Gang [Wildcat Discovery Technologies, San Diego, CA (United States); Carroll, Kyler [Wildcat Discovery Technologies, San Diego, CA (United States); Clemons, Owen [Wildcat Discovery Technologies, San Diego, CA (United States); Strand, Diedre [Wildcat Discovery Technologies, San Diego, CA (United States)

2016-09-09

Substantial improvement in the energy density of rechargeable lithium batteries is required to meet the future needs for electric and plug-in electric vehicles (EV and PHEV). Present day lithium ion battery technology is based on shuttling lithium between graphitic carbon and inorganic oxides. Non-graphitic anodes, such as silicon can provide significant improvements in energy density but are currently limited in cycle life due to reactivity with the electrolyte. Wildcat/3M proposes the development of non-carbonate electrolyte formulations tailored for silicon alloy anodes. Combining these electrolytes with 3M’s anode and an NMC cathode will enable up to a 20% increase in the volumetric cell energy density, while still meeting the PHEV/EV cell level cycle/calendar life goals.

Ultrafast control and monitoring of material properties using terahertz pulses

Energy Technology Data Exchange (ETDEWEB)

Bowlan, Pamela Renee [Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Lab. for Ultrafast Materials Optical Science (LUMOS)

2016-05-02

These are a set of slides on ultrafast control and monitoring of material properties using terahertz pulses. A few of the topics covered in these slides are: How fast is a femtosecond (fs), Different frequencies probe different properties of molecules or solids, What can a THz pulse do to a material, Ultrafast spectroscopy, Generating and measuring ultrashort THz pulses, Tracking ultrafast spin dynamics in antiferromagnets through spin wave resonances, Coherent two-dimensional THz spectroscopy, and Probing vibrational dynamics at a surface. Conclusions are: Coherent two-dimensional THz spectroscopy: a powerful approach for studying coherence and dynamics of low energy resonances. Applying this to graphene we investigated the very strong THz light mater interaction which dominates over scattering. Useful for studying coupled excitations in multiferroics and monitoring chemical reactions. Also, THz-pump, SHG-probe spectoscopy: an ultrafast, surface sensitive probe of atomic-scale symmetry changes and nonlinear phonon dymanics. We are using this in Bi₂Se₃ to investigate the nonlinear surface phonon dynamics. This is potentially very useful for studying catalysis.

Rapid data processing for ultrafast X-ray computed tomography using scalable and modular CUDA based pipelines

Science.gov (United States)

Frust, Tobias; Wagner, Michael; Stephan, Jan; Juckeland, Guido; Bieberle, André

2017-10-01

Ultrafast X-ray tomography is an advanced imaging technique for the study of dynamic processes basing on the principles of electron beam scanning. A typical application case for this technique is e.g. the study of multiphase flows, that is, flows of mixtures of substances such as gas-liquidflows in pipelines or chemical reactors. At Helmholtz-Zentrum Dresden-Rossendorf (HZDR) a number of such tomography scanners are operated. Currently, there are two main points limiting their application in some fields. First, after each CT scan sequence the data of the radiation detector must be downloaded from the scanner to a data processing machine. Second, the current data processing is comparably time-consuming compared to the CT scan sequence interval. To enable online observations or use this technique to control actuators in real-time, a modular and scalable data processing tool has been developed, consisting of user-definable stages working independently together in a so called data processing pipeline, that keeps up with the CT scanner's maximal frame rate of up to 8 kHz. The newly developed data processing stages are freely programmable and combinable. In order to achieve the highest processing performance all relevant data processing steps, which are required for a standard slice image reconstruction, were individually implemented in separate stages using Graphics Processing Units (GPUs) and NVIDIA's CUDA programming language. Data processing performance tests on different high-end GPUs (Tesla K20c, GeForce GTX 1080, Tesla P100) showed excellent performance. Program Files doi:http://dx.doi.org/10.17632/65sx747rvm.1 Licensing provisions: LGPLv3 Programming language: C++/CUDA Supplementary material: Test data set, used for the performance analysis. Nature of problem: Ultrafast computed tomography is performed with a scan rate of up to 8 kHz. To obtain cross-sectional images from projection data computer-based image reconstruction algorithms must be applied. The

Ultrafast demagnetisation dependence on film thickness: A TDDFT calculation

Science.gov (United States)

Singh, N.; Sharma, S.

2018-04-01

Ferromagnetic materials when subjected to intense laser pulses leads to reduction of their magnetisation on an ultrafast scale. Here, we perform an ab-initio calculation to study the behavior of ultrafast demagnetisation as a function of film thickness for Nickel as compared to the bulk of the material. In thin films surface formation results in amplification of demagnetisation with the percentage of demagnetisation depending upon the film thickness.

The Gigatracker: An ultra-fast and low-mass silicon pixel detector for the NA62 experiment

CERN Document Server

Fiorini, M; Morel, M; Petrucci, F; Marchetto, F; Garbolino, S; Cortina, E; Tiuraniemi, S; Ceccucci, A; Martin, E; Riedler, P; Martoiu, S; Ramusino, A C; Rinella, G A; Mapelli, A; Mazza, G; Noy, M; Jarron, P; Nuessle, G; Dellacasa, G; Kluge, A; Rivetti, A; Kaplon, J

2011-01-01

The Gigatracker is a hybrid silicon pixel detector developed to track the highly intense NA62 hadron beam with a time resolution of 150 ps (rms). The beam spectrometer of the experiment is composed of three Gigatracker stations installed in vacuum in order to precisely measure momentum, time and direction of every traversing particle. Precise tracking demands a very low mass of the detector assembly (<0.5\\% X(O) per station) in order to limit multiple scattering and beam hadronic interactions. The high rate and especially the high timing precision requirements are very demanding: two R\\&D options are ongoing and the corresponding prototype read-out chips have been recently designed and produced in 0.13 mu m CMOS technology. One solution makes use of a constant fraction discriminator and on-pixel analogue-based time-to-digital-converter (TDC); the other comprises a delay-locked loop based TDC placed at the end of each pixel column and a time-over-threshold discriminator with time-walk correction techniq...

Lithium ion batteries based on nanoporous silicon

Science.gov (United States)

Tolbert, Sarah H.; Nemanick, Eric J.; Kang, Chris Byung-Hwa

2015-09-22

A lithium ion battery that incorporates an anode formed from a Group IV semiconductor material such as porous silicon is disclosed. The battery includes a cathode, and an anode comprising porous silicon. In some embodiments, the anode is present in the form of a nanowire, a film, or a powder, the porous silicon having a pore diameters within the range between 2 nm and 100 nm and an average wall thickness of within the range between 1 nm and 100 nm. The lithium ion battery further includes, in some embodiments, a non-aqueous lithium containing electrolyte. Lithium ion batteries incorporating a porous silicon anode demonstrate have high, stable lithium alloying capacity over many cycles.

Iron solubility in highly boron-doped silicon

International Nuclear Information System (INIS)

McHugo, S.A.; McDonald, R.J.; Smith, A.R.; Hurley, D.L.; Weber, E.R.

1998-01-01

We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were measured at 800, 900, 1000, and 1100thinsp degree C in silicon doped with either 1.5x10 19 or 6.5x10 14 thinspboronthinspatoms/cm 3 . We have measured a greater iron solubility in high boron-doped silicon as compared to low boron-doped silicon, however, the degree of enhancement is lower than anticipated at temperatures >800thinsp degree C. The decreased enhancement is explained by a shift in the iron donor energy level towards the valence band at elevated temperatures. Based on this data, we have calculated the position of the iron donor level in the silicon band gap at elevated temperatures. We incorporate the iron energy level shift in calculations of iron solubility in silicon over a wide range of temperatures and boron-doping levels, providing a means to accurately predict iron segregation between high and low boron-doped silicon. copyright 1998 American Institute of Physics

Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz Components

Science.gov (United States)

Jung-Kubiak, Cecile (Inventor); Reck, Theodore (Inventor); Chattopadhyay, Goutam (Inventor); Perez, Jose Vicente Siles (Inventor); Lin, Robert H. (Inventor); Mehdi, Imran (Inventor); Lee, Choonsup (Inventor); Cooper, Ken B. (Inventor); Peralta, Alejandro (Inventor)

2016-01-01

A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

Experimental and Computer Modelling Studies of Metastability of Amorphous Silicon Based Solar Cells

NARCIS (Netherlands)

Munyeme, Geoffrey

2003-01-01

We present a combination of experimental and computer modelling studies of the light induced degradation in the performance of amorphous silicon based single junction solar cells. Of particular interest in this study is the degradation kinetics of different types of amorphous silicon single junction

Ultrafast magnetodynamics with free-electron lasers

Science.gov (United States)

Malvestuto, Marco; Ciprian, Roberta; Caretta, Antonio; Casarin, Barbara; Parmigiani, Fulvio

2018-02-01

The study of ultrafast magnetodynamics has entered a new era thanks to the groundbreaking technological advances in free-electron laser (FEL) light sources. The advent of these light sources has made possible unprecedented experimental schemes for time-resolved x-ray magneto-optic spectroscopies, which are now paving the road for exploring the ultimate limits of out-of-equilibrium magnetic phenomena. In particular, these studies will provide insights into elementary mechanisms governing spin and orbital dynamics, therefore contributing to the development of ultrafast devices for relevant magnetic technologies. This topical review focuses on recent advancement in the study of non-equilibrium magnetic phenomena from the perspective of time-resolved extreme ultra violet (EUV) and soft x-ray spectroscopies at FELs with highlights of some important experimental results.

Femtochemistry and femtobiology ultrafast dynamics in molecular science

CERN Document Server

Douhal, Abderrazzak

2002-01-01

This book contains important contributions from top international scientists on the-state-of-the-art of femtochemistry and femtobiology at the beginning of the new millennium. It consists of reviews and papers on ultrafast dynamics in molecular science.The coverage of topics highlights several important features of molecular science from the viewpoint of structure (space domain) and dynamics (time domain). First of all, the book presents the latest developments, such as experimental techniques for understanding ultrafast processes in gas, condensed and complex systems, including biological mol

Towards Cost-Effective Crystalline Silicon Based Flexible Solar Cells: Integration Strategy by Rational Design of Materials, Process, and Devices

KAUST Repository

Bahabry, Rabab R.

2017-11-30

The solar cells market has an annual growth of more than 30 percent over the past 15 years. At the same time, the cost of the solar modules diminished to meet both of the rapid global demand and the technological improvements. In particular for the crystalline silicon solar cells, the workhorse of this technology. The objective of this doctoral thesis is enhancing the efficiency of c-Si solar cells while exploring the cost reduction via innovative techniques. Contact metallization and ultra-flexible wafer based c-Si solar cells are the main areas under investigation. First, Silicon-based solar cells typically utilize screen printed Silver (Ag) metal contacts which affect the optimal electrical performance. To date, metal silicide-based ohmic contacts are occasionally used for the front contact grid lines. In this work, investigation of the microstructure and the electrical characteristics of nickel monosilicide (NiSi) ohmic contacts on the rear side of c-Si solar cells has been carried out. Significant enhancement in the fill factor leading to increasing the total power conversion efficiency is observed. Second, advanced classes of modern application require a new generation of versatile solar cells showcasing extreme mechanical resilience. However, silicon is a brittle material with a fracture strains <1%. Highly flexible Si-based solar cells are available in the form thin films which seem to be disadvantageous over thick Si solar cells due to the reduction of the optical absorption with less active Si material. Here, a complementary metal oxide semiconductor (CMOS) technology based integration strategy is designed where corrugation architecture to enable an ultra-flexible solar cell module from bulk mono-crystalline silicon solar wafer with 17% efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness and achieves flexibility via interdigitated back contacts. These cells

Ultrafast spectroscopy of biological photoreceptors

NARCIS (Netherlands)

Kennis, J.T.M.; Groot, M.L.

2007-01-01

We review recent new insights on reaction dynamics of photoreceptors proteins gained from ultrafast spectroscopy. In Blue Light sensing Using FAD (BLUF) domains, a hydrogen-bond rearrangement around the flavin chromophore proceeds through a radical-pair mechanism, by which light-induced electron and

Ultrafast vibrations of gold nanorings

DEFF Research Database (Denmark)

Kelf, T; Tanaka, Y; Matsuda, O

2011-01-01

We investigate the vibrational modes of gold nanorings on a silica substrate with an ultrafast optical technique. By comparison with numerical simulations, we identify several resonances in the gigahertz range associated with axially symmetric deformations of the nanoring and substrate. We elucid...

Seeing in 4D with electrons: development of ultrafast electron microscopy at Caltech

International Nuclear Information System (INIS)

Baskin, J.S.; Zewail, A.H.

2014-01-01

The vision to develop 4D electron microscopy, a union of the capabilities of electron microscopy with ultrafast techniques to capture clearly defined images of the nano-scale structure of a material at each step in the course of its chemical or physical transformations, has been pursued at Caltech for the last decade. In this contribution, we will give a brief overview of the capabilities of three currently active Caltech 4D microscopy laboratories. Ongoing work is illustrated by a description of the most recent application of photon-induced near-field electron microscopy (PINEM), a field made possible only by the development of the 4D ultrafast electron microscopy (UEM). An appendix gives the various applications made so far and the historic roots of the development at Caltech. (authors)

Nitrogen-Doped Holey Graphene Film-Based Ultrafast Electrochemical Capacitors.

Science.gov (United States)

Zhou, Qinqin; Zhang, Miao; Chen, Ji; Hong, Jong-Dal; Shi, Gaoquan

2016-08-17

The commercialized aluminum electrolytic capacitors (AECs) currently used for alternating current (AC) line-filtering are usually the largest components in the electronic circuits because of their low specific capacitances and bulky sizes. Herein, nitrogen-doped holey graphene (NHG) films were prepared by thermal annealing the composite films of polyvinylpyrrolidone (PVP), graphene oxide (GO), and ferric oxide (Fe2O3) nanorods followed by chemical etching with hydrochloride acid. The typical electrochemical capacitor with NHG electrodes exhibited high areal and volumetric specific capacitances of 478 μF cm(-2) and 1.2 F cm(-3) at 120 Hz, ultrafast frequency response with a phase angle of -81.2° and a resistor-capacitor time constant of 203 μs at 120 Hz, as well as excellent cycling stability. Thus, it is promising to replace conventional AEC for AC line-filtering in miniaturized electronics.

A parylene-filled-trench technique for thermal isolation in silicon-based microdevices

International Nuclear Information System (INIS)

Lei Yinhua; Wang Wei; Li Ting; Jin Yufeng; Zhang Haixia; Li Zhihong; Yu Huaiqiang; Luo Yingcun

2009-01-01

Microdevices prepared in a silicon substrate have been widely used in versatile fields due to the matured silicon-based microfabrication technique and the excellent physical properties of silicon material. However, the high thermal conductivity of silicon restricts its application in most thermal microdevices, especially devices comprising different temperature zones. In this work, a parylene-filled-trench technique was optimized to realize high-quality thermal isolation in silicon-based microdevices. Parylene C, a heat transfer barricading material, was deposited on parallel high-aspect-ratio trenches, which surrounded the isolated target zones. After removing the remnant silicon beneath the trenches by deep reactive ion etching from the back side, a high-quality heat transfer barrier was obtained. By using narrow trenches, only 5 µm thick parylene was required for a complete filling, which facilitated multi-layer interconnection thereafter. The parylene filling performance inside the high-aspect-ratio trench was optimized by two approaches: multiple etch–deposition cycling and trench profile controlling. A 4 × 6 array, in which each unit was kept at a constant temperature and was well thermally isolated individually, was achieved on a silicon substrate by using the present parylene-filled-trench technique. The preliminary experimental results indicated that the present parylene-filled-trench structure exhibited excellent thermal isolation performance, with a very low power requirement of 0.134 mW (K mm 2 ) −1 for heating the isolated silicon unit and a high thermal isolation efficiency of 72.5% between two adjacent units. Accompanied with high-quality isolation performance, the microdevices embedded the present parylene-filled-trench structure to retain a strong mechanical connection larger than 400 kPa between two isolated zones, which is very important for a high-reliability-required micro-electro-mechanical-system (MEMS) device. Considering its room

Ultrafast surface-enhanced Raman spectroscopy.

Science.gov (United States)

Keller, Emily L; Brandt, Nathaniel C; Cassabaum, Alyssa A; Frontiera, Renee R

2015-08-07

Ultrafast surface-enhanced Raman spectroscopy (SERS) with pico- and femtosecond time resolution has the ability to elucidate the mechanisms by which plasmons mediate chemical reactions. Here we review three important technological advances in these new methodologies, and discuss their prospects for applications in areas including plasmon-induced chemistry and sensing at very low limits of detection. Surface enhancement, arising from plasmonic materials, has been successfully incorporated with stimulated Raman techniques such as femtosecond stimulated Raman spectroscopy (FSRS) and coherent anti-Stokes Raman spectroscopy (CARS). These techniques are capable of time-resolved measurement on the femtosecond and picosecond time scale and can be used to follow the dynamics of molecules reacting near plasmonic surfaces. We discuss the potential application of ultrafast SERS techniques to probe plasmon-mediated processes, such as H2 dissociation and solar steam production. Additionally, we discuss the possibilities for high sensitivity SERS sensing using these stimulated Raman spectroscopies.

Polarization Insensitive Wavelength Conversion Based on Four-Wave Mixing in a Silicon Nanowire

DEFF Research Database (Denmark)

Pu, Minhao; Hu, Hao; Peucheret, Christophe

2012-01-01

We experimentally demonstrate, for the first time, polarization-insensitive wavelength conversion of a 10 Gb/s NRZ-OOK data signal based on four-wave mixing in a silicon nanowire with bit-error rate measurements.......We experimentally demonstrate, for the first time, polarization-insensitive wavelength conversion of a 10 Gb/s NRZ-OOK data signal based on four-wave mixing in a silicon nanowire with bit-error rate measurements....

Research on the Effects of Process Parameters on Surface Roughness in Wet-Activated Silicon Direct Bonding Base on Orthogonal Experiments

Directory of Open Access Journals (Sweden)

Lei NIE

2015-11-01

Full Text Available Surface roughness is a very important index in silicon direct bonding and it is affected by processing parameters in the wet-activated process. These parameters include the concentration of activation solution, holding time and treatment temperature. The effects of these parameters were investigated by means of orthogonal experiments. In order to analyze the wafer roughness more accurately, the bear ratio of the surface was used as the evaluation index. From the results of the experiments, it could be concluded that the concentration of the activation solution affected the roughness directly and the higher the concentration, the lower the roughness. Holding time did not affect the roughness as acutely as that of the concentration, but a reduced activation time decreased the roughness perceptibly. It was also discovered that the treatment temperature had a weak correlation with the surface roughness. Based on these conclusions, the parameters of concentration, temperature and holding time were optimized respectively as NH4OH:H2O2=1:1 (without water, 70 °C and 5 min. The results of bonding experiments proved the validity of the conclusions of orthogonal experiments.DOI: http://dx.doi.org/10.5755/j01.ms.21.4.9711

Ultrafast modulation of near-field heat transfer with tunable metamaterials

OpenAIRE

Cui, Longji; Huang, Yong; Wang, Ju; Zhu, Ke-Yong

2012-01-01

We propose a mechanism of active near-field heat transfer modulation relying on externally tunable metamaterials. A large modulation effect is observed and can be explained by the coupling of surface modes, which is dramatically varied in the presence of controllable magnetoelectric coupling in metamaterials. We finally discuss how a practical picosecond-scale thermal modulator can be made. This modulator allows manipulating nanoscale heat flux in an ultrafast and noncontact (by optical means...

Ultrafast gas switching experiments

International Nuclear Information System (INIS)

Frost, C.A.; Martin, T.H.; Patterson, P.E.; Rinehart, L.F.; Rohwein, G.J.; Roose, L.D.; Aurand, J.F.; Buttram, M.T.

1993-01-01

We describe recent experiments which studied the physics of ultrafast gas breakdown under the extreme overvoltages which occur when a high pressure gas switch is pulse charged to hundreds of kV in 1 ns or less. The highly overvolted peaking gaps produce powerful electromagnetic pulses with risetimes Khz at > 100 kV/m E field

Ultrafast spin exchange-coupling torque via photo-excited charge-transfer processes

Science.gov (United States)

Ma, X.; Fang, F.; Li, Q.; Zhu, J.; Yang, Y.; Wu, Y. Z.; Zhao, H. B.; Lüpke, G.

2015-10-01

Optical control of spin is of central importance in the research of ultrafast spintronic devices utilizing spin dynamics at short time scales. Recently developed optical approaches such as ultrafast demagnetization, spin-transfer and spin-orbit torques open new pathways to manipulate spin through its interaction with photon, orbit, charge or phonon. However, these processes are limited by either the long thermal recovery time or the low-temperature requirement. Here we experimentally demonstrate ultrafast coherent spin precession via optical charge-transfer processes in the exchange-coupled Fe/CoO system at room temperature. The efficiency of spin precession excitation is significantly higher and the recovery time of the exchange-coupling torque is much shorter than for the demagnetization procedure, which is desirable for fast switching. The exchange coupling is a key issue in spin valves and tunnelling junctions, and hence our findings will help promote the development of exchange-coupled device concepts for ultrafast coherent spin manipulation.

Ultrafast magnetization dynamics

OpenAIRE

Woodford, Simon

2008-01-01

This thesis addresses ultrafast magnetization dynamics from a theoretical perspective. The manipulation of magnetization using the inverse Faraday effect has been studied, as well as magnetic relaxation processes in quantum dots. The inverse Faraday effect – the generation of a magnetic field by nonresonant, circularly polarized light – offers the possibility to control and reverse magnetization on a timescale of a few hundred femtoseconds. This is important both for the technological advant...

Surface plasmons based terahertz modulator consisting of silicon-air-metal-dielectric-metal layers

Science.gov (United States)

Wang, Wei; Yang, Dongxiao; Qian, Zhenhai

2018-05-01

An optically controlled modulator of the terahertz wave, which is composed of a metal-dielectric-metal structure etched with circular loop arrays on both the metal layers and a photoexcited silicon wafer separated by an air layer, is proposed. Simulation results based on experimentally measured complex permittivities predict that modification of complex permittivity of the silicon wafer through excitation laser leads to a significant tuning of transmission characteristics of the modulator, forming the modulation depths of 59.62% and 96.64% based on localized surface plasmon peak and propagating surface plasmon peak, respectively. The influences of the complex permittivity of the silicon wafer and the thicknesses of both the air layer and the silicon wafer are numerically studied for better understanding the modulation mechanism. This study proposes a feasible methodology to design an optically controlled terahertz modulator with large modulation depth, high speed and suitable insertion loss, which is useful for terahertz applications in the future.

[A micro-silicon multi-slit spectrophotometer based on MEMS technology].

Science.gov (United States)

Hao, Peng; Wu, Yi-Hui; Zhang, Ping; Liu, Yong-Shun; Zhang, Ke; Li, Hai-Wen

2009-06-01

A new mini-spectrophotometer was developed by adopting micro-silicon slit and pixel segmentation technology, and this spectrophotometer used photoelectron diode array as the detector by the back-dividing-light way. At first, the effect of the spectral bandwidth on the tested absorbance linear correlation was analyzed. A theory for the design of spectrophotometer's slit was brought forward after discussing the relationships between spectrophotometer spectrum band width and pre-and post-slits width. Then, the integrative micro-silicon-slit, which features small volume, high precision, and thin thickness, was manufactured based on the MEMS technology. Finally, a test was carried on linear absorbance solution by this spectrophotometer. The final result showed that the correlation coefficients were larger than 0.999, which means that the new mini-spectrophotometer with micro-silicon slit pixel segmentation has an obvious linear correlation.

Silicon Nanocrystal Synthesis in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with grains smaller than 5 nm are widely recognized as a key material in optoelectronic devices, lithium battery electrodes, and bio-medical labels. Another important characteristic is that silicon is an environmentally safe material that is used in numerous silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma-enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. In this study, we explore the possibility of microplasma technologies for efficient production of mono-dispersed nanocrystalline silicon particles on a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using a very-high-frequency (144 MHz) power source in a capillary glass tube with volume of less than 1 μl. Fundamental plasma parameters of the microplasma were characterized using optical emission spectroscopy, which respectively indicated electron density of 1015 cm-3, argon excitation temperature of 5000 K, and rotational temperature of 1500 K. Such high-density non-thermal reactive plasma can decompose silicon tetrachloride into atomic silicon to produce supersaturated silicon vapor, followed by gas-phase nucleation via three-body collision: particle synthesis in high-density plasma media is beneficial for promoting nucleation processes. In addition, further growth of silicon nuclei can be terminated in a short-residence-time reactor. Micro-Raman scattering spectra showed that as-deposited particles are mostly amorphous silicon with a small fraction of silicon nanocrystals. Transmission electron micrography confirmed individual 3-15 nm silicon nanocrystals. Although particles were not mono-dispersed, they were well separated and not coagulated.

Tissue strain rate estimator using ultrafast IQ complex data

OpenAIRE

TERNIFI , Redouane; Elkateb Hachemi , Melouka; Remenieras , Jean-Pierre

2012-01-01

International audience; Pulsatile motion of brain parenchyma results from cardiac and breathing cycles. In this study, transient motion of brain tissue was estimated using an Aixplorer® imaging system allowing an ultrafast 2D acquisition mode. The strain was computed directly from the ultrafast IQ complex data using the extended autocorrelation strain estimator (EASE), which provides great SNRs regardless of depth. The EASE first evaluates the autocorrelation function at each depth over a set...

Anti-pepsin activity of silicon dioxide nanoparticles

Directory of Open Access Journals (Sweden)

Hussein Kadhem Al-Hakeim

2016-09-01

Full Text Available SiO2NPs as an inhibitor of pepsin enzyme for treatment of gastro-esophageal reflux disease (GERD was used. Silicon dioxide nanoparticles (pepsin coated SiO2NPs are among the safest nanoparticles that can be used inside the human body. The activity of pepsin before and after the addition of certain amounts of the NPs to the reaction mixture was measured spectrophotometrically. Furthermore, these experiments were repeated at different temperatures, different weights of NPs, and different ionic strengths. The kinetic aparameters (Km & Vmax of the pepsin catalyzed reactions were calculated from the Lineweaver-Burke plots. The results showed that there is a significant reduction of pepsin activity by SiO2NPs (Vmax of free pepsin = 4.82 U and Vmax of the immobilizedpepsin = 2.90 U. The results also indicated that the presence of ionic strength causes remarkable reduction of pepsin activity. It can be concluded the best condition for inhibition of pepsin activity is by using a combination of SiO2NPs and high concentration NaCl at 37 °C.

Performance of conversion efficiency of a crystalline silicon solar cell with base doping density

Directory of Open Access Journals (Sweden)

Gokhan Sahin

Full Text Available In this study, we investigate theoretically the electrical parameters of a crystalline silicon solar cell in steady state. Based on a one-dimensional modeling of the cell, the short circuit current density, the open circuit voltage, the shunt and series resistances and the conversion efficiency are calculated, taking into account the base doping density. Either the I-V characteristic, series resistance, shunt resistance and conversion efficiency are determined and studied versus base doping density. The effects applied of base doping density on these parameters have been studied. The aim of this work is to show how short circuit current density, open circuit voltage and parasitic resistances are related to the base doping density and to exhibit the role played by those parasitic resistances on the conversion efficiency of the crystalline silicon solar. Keywords: Crystalline silicon solar cell, Base doping density, Series resistance, Shunt resistance, Conversion efficiency

Silicon heterojunction transistor

International Nuclear Information System (INIS)

Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

1979-01-01

SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

Ultrafast layer based computer-generated hologram calculation with sparse template holographic fringe pattern for 3-D object.

Science.gov (United States)

Kim, Hak Gu; Man Ro, Yong

2017-11-27

In this paper, we propose a new ultrafast layer based CGH calculation that exploits the sparsity of hologram fringe pattern in 3-D object layer. Specifically, we devise a sparse template holographic fringe pattern. The holographic fringe pattern on a depth layer can be rapidly calculated by adding the sparse template holographic fringe patterns at each object point position. Since the size of sparse template holographic fringe pattern is much smaller than that of the CGH plane, the computational load can be significantly reduced. Experimental results show that the proposed method achieves 10-20 msec for 1024x1024 pixels providing visually plausible results.

High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

Directory of Open Access Journals (Sweden)

Yulong Zhang

2018-05-01

Full Text Available High performance silicon combined structure (micropillar with Cu nanoparticles solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.

High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

Science.gov (United States)

Zhang, Yulong; Fan, Zhiqiang; Zhang, Weijia; Ma, Qiang; Jiang, Zhaoyi; Ma, Denghao

2018-05-01

High performance silicon combined structure (micropillar with Cu nanoparticles) solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.

Simulations for irradiation of silicon-based structures

International Nuclear Information System (INIS)

Sagatova, A.; Pavlovic, M.; Sedlackova, K.; Necas, V.; Hybler, P.; Zatko, B.

2013-01-01

The software ModePEB for modelling of electron beam processing in multilayer flat objects was shown to be a very useful tool for optimization of the irradiation of silicon based structures. Except its significant help in setting-up the accelerator parameters corresponding to a desired dose, its proven reliability and consistency with the measured data makes the ModePEB an inevitable instrument for design and optimization of electron irradiation experiments. (authors)

Ultrafast photocurrents and terahertz radiation in gallium arsenide and carbon based nanostructures

Energy Technology Data Exchange (ETDEWEB)

Prechtel, Hans Leonhard

2011-08-15

In this thesis we developed a measurement technique based on a common pump-probe scheme and coplanar stripline circuits that enables time-resolved photocurrent measurements of contacted nanosystems with a micrometer spatial and a picosecond time resolution. The measurement technique was applied to lowtemperature grown gallium arsenide (LT-GaAs), carbon nanotubes (CNTs), graphene, and p-doped gallium arsenide (GaAs) nanowires. The various mechanisms responsible for the generation of current pulses by pulsed laser excitation were reviewed. Furthermore the propagation of the resulting electromagnetic radiation along a coplanar stripline circuit was theoretically and numerically treated. The ultrafast photocurrent response of low-temperature grown GaAs was investigated. We found two photocurrent pulses in the time-resolved response. We showed that the first pulse is consistent with a displacement current pulse. We interpreted the second pulse to result from a transport current process. We further determined the velocity of the photo-generated charge carriers to exceed the drift, thermal and quantum velocities of single charge carriers. Hereby, we interpreted the transport current pulse to stem from an electron-hole plasma excitation. We demonstrated that the photocurrent response of CNTs comprises an ultrafast displacement current and a transport current. The data suggested that the photocurrent is finally terminated by the recombination lifetime of the charge carriers. To the best of our knowledge, we presented in this thesis the first recombination lifetime measurements of contacted, suspended, CVD grown CNT networks. In addition, we studied the ultrafast photocurrent dynamics of freely suspended graphene contacted by metal electrodes. At the graphene-metal interface, we demonstrated that built-in electric fields give rise to a photocurrent with a full-width-half-maximum of a few picoseconds and that a photo-thermoelectric effect generates a current with a decay time

The determination of trace oxygen in aluminium and aluminium-silicon alloy by helium-3 activation analysis

International Nuclear Information System (INIS)

Vandecasteele, C.; Goethals, P.; Kieffer, R.; Hoste, J.

1975-01-01

The determination of oxygen in aluminium and aluminium-silicon alloy by helium-3 activation is studied. The 18 F formed from oxygen is separated by distillation followed by precipitation of leadfluorochloride. The chemical yield is determined by activation in an isotopic neutron source. Concentrations of resp. 27 and 64 ng.g -1 with a precision for a single determination of resp. 30 and 13% are found in 99.5% aluminium and in aluminium-silicon (3%) alloy. (author)

Imaging Localized Energy States in Silicon-doped InGaN Nanowires Using 4D Electron Microscopy

KAUST Repository

Bose, Riya; Adhikari, Aniruddha; Burlakov, Victor M; Liu, Guangyu; Haque, Mohammed; Priante, Davide; Hedhili, Mohamed N.; Wehbe, Nimer; Zhao, Chao; Yang, Haoze; Ng, Tien Khee; Goriely, Alain; Bakr, Osman; Wu, Tao; Ooi, Boon S.; Mohammed, Omar F.

2018-01-01

Introducing dopants into InGaN NWs is known to significantly improve their device performances through a variety of mechanisms. However, to further optimize device operation under the influence of large specific surfaces, a thorough knowledge of ultrafast dynamical processes at the surface and interface of these NWs is imperative. Here, we describe the development of four-dimensional scanning ultrafast electron microscopy (4D S-UEM) as an extremely surface-sensitive method to directly visualize in space and time the enormous impact of silicon doping on the surface-carrier dynamics of InGaN NWs. Two time regime dynamics are identified for the first time in a 4D S-UEM experiment: an early time behavior (within 200 picoseconds) associated with the deferred evolution of secondary electrons due to the presence of localized trap states that decrease the electron escape rate and a longer timescale behavior (several ns) marked by accelerated charge carrier recombination. The results are further corroborated by conductivity studies carried out in dark and under illumination.

Imaging Localized Energy States in Silicon-doped InGaN Nanowires Using 4D Electron Microscopy

KAUST Repository

Bose, Riya

2018-01-23

Introducing dopants into InGaN NWs is known to significantly improve their device performances through a variety of mechanisms. However, to further optimize device operation under the influence of large specific surfaces, a thorough knowledge of ultrafast dynamical processes at the surface and interface of these NWs is imperative. Here, we describe the development of four-dimensional scanning ultrafast electron microscopy (4D S-UEM) as an extremely surface-sensitive method to directly visualize in space and time the enormous impact of silicon doping on the surface-carrier dynamics of InGaN NWs. Two time regime dynamics are identified for the first time in a 4D S-UEM experiment: an early time behavior (within 200 picoseconds) associated with the deferred evolution of secondary electrons due to the presence of localized trap states that decrease the electron escape rate and a longer timescale behavior (several ns) marked by accelerated charge carrier recombination. The results are further corroborated by conductivity studies carried out in dark and under illumination.

Adhesion between coating layers based on epoxy and silicone

DEFF Research Database (Denmark)

Svendsen, Jacob R.; Kontogeorgis, Georgios; Kiil, Søren

2007-01-01

The adhesion between a silicon tie-coat and epoxy primers, used in marine coating systems, has been studied in this work. Six epoxy coatings (with varying chain lengths of the epoxy resins), some of which have shown problems with adhesion to the tie-coat during service life, have been considered....... The experimental investigation includes measurements of the surface tension of the tie-coat and the critical surface tensions of the epoxies, topographic investigation of the surfaces of cured epoxy coatings via atomic force microscopy (AFM), and pull-off tests for investigating the strength of adhesion...... to the silicon/epoxy systems. Calculations for determining the roughness factor of the six epoxy coatings (based on the AFM topographies) and the theoretical work of adhesion have been carried out. The coating surfaces are also characterized based on the van Oss-Good theory. Previous studies on the modulus...

Ultra-fast framing camera tube

Science.gov (United States)

Kalibjian, Ralph

1981-01-01

An electronic framing camera tube features focal plane image dissection and synchronized restoration of the dissected electron line images to form two-dimensional framed images. Ultra-fast framing is performed by first streaking a two-dimensional electron image across a narrow slit, thereby dissecting the two-dimensional electron image into sequential electron line images. The dissected electron line images are then restored into a framed image by a restorer deflector operated synchronously with the dissector deflector. The number of framed images on the tube's viewing screen is equal to the number of dissecting slits in the tube. The distinguishing features of this ultra-fast framing camera tube are the focal plane dissecting slits, and the synchronously-operated restorer deflector which restores the dissected electron line images into a two-dimensional framed image. The framing camera tube can produce image frames having high spatial resolution of optical events in the sub-100 picosecond range.

Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

International Nuclear Information System (INIS)

Hamilton, J.J.; Collart, E.J.H.; Colombeau, B.; Jeynes, C.; Bersani, M.; Giubertoni, D.; Sharp, J.A.; Cowern, N.E.B.; Kirkby, K.J.

2005-01-01

The formation of highly activated ultra-shallow junctions (USJ) is one of the key requirements for the next generation of CMOS devices. One promising method for achieving this is the use of Ge preamorphising implants (PAI) prior to ultra-low energy B implantation. In future technology nodes, bulk silicon wafers may be supplanted by Silicon-on-Insulator (SOI), and an understanding of the Solid Phase Epitaxial (SPE) regrowth process and its correlation to dopant electrical activation in both bulk silicon and SOI is essential in order to understand the impact of this potential technology change. This kind of understanding will also enable tests of fundamental models for defect evolution and point-defect reactions at silicon/oxide interfaces. In the present work, B is implanted into Ge PAI silicon and SOI wafers with different PAI conditions and B doses, and resulting samples are annealed at various temperatures and times. Glancing-exit Rutherford Backscattering Spectrometry (RBS) is used to monitor the regrowth of the amorphous silicon, and the resulting redistribution and electrical activity of B are monitored by SIMS and Hall measurements. The results confirm the expected enhancement of regrowth velocity by B doping, and show that this velocity is otherwise independent of the substrate type and the Ge implant distribution within the amorphised layer. Hall measurements on isochronally annealed samples show that B deactivates less in SOI material than in bulk silicon, in cases where the Ge PAI end-of-range defects are close to the SOI back interface

Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers

Science.gov (United States)

Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

2017-07-01

We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

Temperature Effect on Electrical Treeing and Partial Discharge Characteristics of Silicone Rubber-Based Nanocomposites

Directory of Open Access Journals (Sweden)

Mohd Hafizi Ahmad

2015-01-01

Full Text Available This study investigated electrical treeing and its associated phase-resolved partial discharge (PD activities in room-temperature, vulcanized silicone rubber/organomontmorillonite nanocomposite sample materials over a range of temperatures in order to assess the effect of temperature on different filler concentrations under AC voltage. The samples were prepared with three levels of nanofiller content: 0% by weight (wt, 1% by wt, and 3% by wt. The electrical treeing and PD activities of these samples were investigated at temperatures of 20°C, 40°C, and 60°C. The results show that the characteristics of the electrical tree changed with increasing temperature. The tree inception times decreased at 20°C due to space charge dynamics, and the tree growth time increased at 40°C due to the increase in the number of cross-link network structures caused by the vulcanization process. At 60°C, more enhanced and reinforced properties of the silicone rubber-based nanocomposite samples occurred. This led to an increase in electrical tree inception time and electrical tree growth time. However, the PD characteristics, particularly the mean phase angle of occurrence of the positive and negative discharge distributions, were insensitive to variations in temperature. This reflects an enhanced stability in the nanocomposite electrical properties compared with the base polymer.

Nanoscale phosphorus atom arrays created using STM for the fabrication of a silicon based quantum computer.

Energy Technology Data Exchange (ETDEWEB)

O' Brien, J. L. (Jeremy L.); Schofield, S. R. (Steven R.); Simmons, M. Y. (Michelle Y.); Clark, R. G. (Robert G.); Dzurak, A. S. (Andrew S.); Curson, N. J. (Neil J.); Kane, B. E. (Bruce E.); McAlpine, N. S. (Neal S.); Hawley, M. E. (Marilyn E.); Brown, G. W. (Geoffrey W.)

2001-01-01

Quantum computers offer the promise of formidable computational power for certain tasks. Of the various possible physical implementations of such a device, silicon based architectures are attractive for their scalability and ease of integration with existing silicon technology. These designs use either the electron or nuclear spin state of single donor atoms to store quantum information. Here we describe a strategy to fabricate an array of single phosphorus atoms in silicon for the construction of such a silicon based quantum computer. We demonstrate the controlled placement of single phosphorus bearing molecules on a silicon surface. This has been achieved by patterning a hydrogen mono-layer 'resist' with a scanning tunneling microscope (STM) tip and exposing the patterned surface to phosphine (PH3) molecules. We also describe preliminary studies into a process to incorporate these surface phosphorus atoms into the silicon crystal at the array sites. Keywords: Quantum computing, nanotechriology scanning turincling microscopy, hydrogen lithography

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits.

Science.gov (United States)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe 2 , a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

Science.gov (United States)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

Training of ultra-fast speech comprehension induces functional reorganization of the central-visual system in late-blind humans

Directory of Open Access Journals (Sweden)

Susanne eDietrich

2013-10-01

Full Text Available Individuals suffering from vision loss of a peripheral origin may learn to understand spoken language at a rate of up to about 22 syllables (syl per seconds (s – exceeding by far the maximum performance level of untrained listeners (ca. 8 syl/s. Previous findings indicate the central-visual system to contribute to the processing of accelerated speech in blind subjects. As an extension, the present training study addresses the issue whether acquisition of ultra-fast (18 syl/s speech perception skills induces de novo central-visual hemodynamic activation in late-blind participants. Furthermore, we asked to what extent subjects with normal or residual vision can improve understanding of accelerated verbal utterances by means of specific training measures. To these ends, functional magnetic resonance imaging (fMRI was performed while subjects were listening to forward and reversed sentence utterances of moderately fast and ultra-fast syllable rates (8 or 18 syl/s prior to and after a training period of ca. six months. Four of six participants showed – independently from residual visual functions – considerable enhancement of ultra-fast speech perception (about 70 percentage points correctly repeated words whereas behavioral performance did not change in the two remaining participants. Only subjects with very low visual acuity displayed training-induced hemodynamic activation of the central-visual system. By contrast, participants with moderately impaired or even normal visual acuity showed, instead, increased right-hemispheric frontal or bilateral anterior temporal lobe responses after training. All subjects with significant training effects displayed a concomitant increase of hemodynamic activation of left-hemispheric SMA. In spite of similar behavioral performance, trained experts appear to use distinct strategies of ultra-fast speech processing depending on whether the occipital cortex is still deployed for visual processing.

Hybrid Integrated Silicon Microfluidic Platform for Fluorescence Based Biodetection

Directory of Open Access Journals (Sweden)

André Darveau

2007-09-01

Full Text Available The desideratum to develop a fully integrated Lab-on-a-chip device capable ofrapid specimen detection for high throughput in-situ biomedical diagnoses and Point-of-Care testing applications has called for the integration of some of the novel technologiessuch as the microfluidics, microphotonics, immunoproteomics and Micro ElectroMechanical Systems (MEMS. In the present work, a silicon based microfluidic device hasbeen developed for carrying out fluorescence based immunoassay. By hybrid attachment ofthe microfluidic device with a Spectrometer-on-chip, the feasibility of synthesizing anintegrated Lab-on-a-chip type device for fluorescence based biosensing has beendemonstrated. Biodetection using the microfluidic device has been carried out usingantigen sheep IgG and Alexafluor-647 tagged antibody particles and the experimentalresults prove that silicon is a compatible material for the present application given thevarious advantages it offers such as cost-effectiveness, ease of bulk microfabrication,superior surface affinity to biomolecules, ease of disposability of the device etc., and is thussuitable for fabricating Lab-on-a-chip type devices.

Process for producing silicon nitride based articles of high fracture toughness and strength

Science.gov (United States)

Huckabee, M.; Buljan, S.T.; Neil, J.T.

1991-09-10

A process for producing a silicon nitride-based article of improved fracture toughness and strength is disclosed. The process involves densifying to at least 98% of theoretical density a mixture including (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 [mu]m and a surface area of about 8-12 m[sup 2]/g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 [mu]m and a surface area of about 2-4 m[sup 2]/g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. Optionally, the mixture may be blended with a binder and injection molded to form a green body, which then may be densified by, for example, hot isostatic pressing.

Laser-driven ultrafast antiproton beam

Science.gov (United States)

Li, Shun; Pei, Zhikun; Shen, Baifei; Xu, Jiancai; Zhang, Lingang; Zhang, Xiaomei; Xu, Tongjun; Yu, Yong; Bu, Zhigang

2018-02-01

Antiproton beam generation is investigated based on the ultra-intense femtosecond laser pulse by using two-dimensional particle-in-cell and Geant4 simulations. A high-flux proton beam with an energy of tens of GeV is generated in sequential radiation pressure and bubble regime and then shoots into a high-Z target for producing antiprotons. Both yield and energy of the antiproton beam increase almost linearly with the laser intensity. The generated antiproton beam has a short pulse duration of about 5 ps and its flux reaches 2 × 10 20 s - 1 at the laser intensity of 2.14 × 10 23 W / cm 2 . Compared to conventional methods, this new method based on the ultra-intense laser pulse is able to provide a compact, tunable, and ultrafast antiproton source, which is potentially useful for quark-gluon plasma study, all-optical antihydrogen generation, and so on.

Influence of acetylcholinesterase immobilization on the photoluminescence properties of mesoporous silicon surface

Energy Technology Data Exchange (ETDEWEB)

Saleem, Muhammad [Department of Chemistry, Kongju National University, Gongju, Chungnam 314-701 (Korea, Republic of); Rafiq, Muhammad; Seo, Sung-Yum [Department of Biology, Kongju National University, Gongju, Chungnam 314-701 (Korea, Republic of); Lee, Ki Hwan, E-mail: khlee@kongju.ac.kr [Department of Chemistry, Kongju National University, Gongju, Chungnam 314-701 (Korea, Republic of)

2014-07-01

Acetylcholinesterase immobilized p-type porous silicon surface was prepared by covalent attachment. The immobilization procedure was based on support surface chemical oxidation, silanization, surface activation with cyanuric chloride and finally covalent attachment of free enzyme on the cyanuric chloride activated porous silicon surface. Different pore diameter of porous silicon samples were prepared by electrochemical etching in HF based electrolyte solution and appropriate sample was selected suitable for enzyme immobilization with maximum trapping ability. The surface modification was studied through field emission scanning electron microscope, EDS, FT-IR analysis, and photoluminescence measurement by utilizing the fluctuation in the photoluminescence of virgin and enzyme immobilized porous silicon surface. Porous silicon showed strong photoluminescence with maximum emission at 643 nm and immobilization of acetylcholinesterase on porous silicon surface cause considerable increment on the photoluminescence of porous silicon material while acetylcholinesterase free counterpart did not exhibit any fluorescence in the range of 635–670 nm. The activities of the free and immobilized enzymes were evaluated by spectrophotometric method by using neostigmine methylsulfate as standard enzyme inhibitor. The immobilized enzyme exhibited considerable response toward neostigmine methylsulfate in a dose dependent manner comparable with that of its free counterpart alongside enhanced stability, easy separation from the reaction media and significant saving of enzyme. It was believed that immobilized enzyme can be exploited in organic and biomolecule synthesis possessing technical and economical prestige over free enzyme and prominence of easy separation from the reaction mixture.

Influence of acetylcholinesterase immobilization on the photoluminescence properties of mesoporous silicon surface

International Nuclear Information System (INIS)

Saleem, Muhammad; Rafiq, Muhammad; Seo, Sung-Yum; Lee, Ki Hwan

2014-01-01

Acetylcholinesterase immobilized p-type porous silicon surface was prepared by covalent attachment. The immobilization procedure was based on support surface chemical oxidation, silanization, surface activation with cyanuric chloride and finally covalent attachment of free enzyme on the cyanuric chloride activated porous silicon surface. Different pore diameter of porous silicon samples were prepared by electrochemical etching in HF based electrolyte solution and appropriate sample was selected suitable for enzyme immobilization with maximum trapping ability. The surface modification was studied through field emission scanning electron microscope, EDS, FT-IR analysis, and photoluminescence measurement by utilizing the fluctuation in the photoluminescence of virgin and enzyme immobilized porous silicon surface. Porous silicon showed strong photoluminescence with maximum emission at 643 nm and immobilization of acetylcholinesterase on porous silicon surface cause considerable increment on the photoluminescence of porous silicon material while acetylcholinesterase free counterpart did not exhibit any fluorescence in the range of 635–670 nm. The activities of the free and immobilized enzymes were evaluated by spectrophotometric method by using neostigmine methylsulfate as standard enzyme inhibitor. The immobilized enzyme exhibited considerable response toward neostigmine methylsulfate in a dose dependent manner comparable with that of its free counterpart alongside enhanced stability, easy separation from the reaction media and significant saving of enzyme. It was believed that immobilized enzyme can be exploited in organic and biomolecule synthesis possessing technical and economical prestige over free enzyme and prominence of easy separation from the reaction mixture.

Ultrafast cavitation induced by an X-ray laser in water drops

Science.gov (United States)

Stan, Claudiu; Willmott, Philip; Stone, Howard; Koglin, Jason; Liang, Mengning; Aquila, Andrew; Robinson, Joseph; Gumerlock, Karl; Blaj, Gabriel; Sierra, Raymond; Boutet, Sebastien; Guillet, Serge; Curtis, Robin; Vetter, Sharon; Loos, Henrik; Turner, James; Decker, Franz-Josef

2016-11-01

Cavitation in pure water is determined by an intrinsic heterogeneous cavitation mechanism, which prevents in general the experimental generation of large tensions (negative pressures) in bulk liquid water. We developed an ultrafast decompression technique, based on the reflection of shock waves generated by an X-ray laser inside liquid drops, to stretch liquids to large negative pressures in a few nanoseconds. Using this method, we observed cavitation in liquid water at pressures below -100 MPa. These large tensions exceed significantly those achieved previously, mainly due to the ultrafast decompression. The decompression induced by shock waves generated by an X-ray laser is rapid enough to continue to stretch the liquid phase after the heterogeneous cavitation occurs in water, despite the rapid growth of cavitation nanobubbles. We developed a nucleation-and-growth hydrodynamic cavitation model that explains our results and estimates the concentration of heterogeneous cavitation nuclei in water.

The Gigatracker: An ultra-fast and low-mass silicon pixel detector for the NA62 experiment

Science.gov (United States)

Fiorini, M.; Carassiti, V.; Ceccucci, A.; Cortina, E.; Cotta Ramusino, A.; Dellacasa, G.; Garbolino, S.; Jarron, P.; Kaplon, J.; Kluge, A.; Mapelli, A.; Marchetto, F.; Martin, E.; Martoiu, S.; Mazza, G.; Morel, M.; Noy, M.; Nuessle, G.; Petrucci, F.; Riedler, P.; Aglieri Rinella, G.; Rivetti, A.; Tiuraniemi, S.

2011-02-01

The Gigatracker is a hybrid silicon pixel detector developed to track the highly intense NA62 hadron beam with a time resolution of 150 ps (rms). The beam spectrometer of the experiment is composed of three Gigatracker stations installed in vacuum in order to precisely measure momentum, time and direction of every traversing particle. Precise tracking demands a very low mass of the detector assembly ( beam hadronic interactions. The high rate and especially the high timing precision requirements are very demanding: two R&D options are ongoing and the corresponding prototype read-out chips have been recently designed and produced in 0.13 μm CMOS technology. One solution makes use of a constant fraction discriminator and on-pixel analogue-based time-to-digital-converter (TDC); the other comprises a delay-locked loop based TDC placed at the end of each pixel column and a time-over-threshold discriminator with time-walk correction technique. The current status of the R&D program is overviewed and results from the prototype read-out chips test are presented.

Ordered silicon nanostructures for silicon-based photonics devices

Czech Academy of Sciences Publication Activity Database

Fojtík, A.; Valenta, J.; Pelant, Ivan; Kálal, M.; Fiala, P.

2007-01-01

Roč. 5, Suppl. (2007), S250-S253 ISSN 1671-7694 R&D Projects: GA AV ČR IAA1010316 Grant - others:GA MŠk(CZ) ME 933 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystals * silicon * self-assembled monolayers Subject RIV: BM - Solid Matter Physics ; Magnetism

Chirped pulse digital holography for measuring the sequence of ultrafast optical wavefronts

Science.gov (United States)

Karasawa, Naoki

2018-04-01

Optical setups for measuring the sequence of ultrafast optical wavefronts using a chirped pulse as a reference wave in digital holography are proposed and analyzed. In this method, multiple ultrafast object pulses are used to probe the temporal evolution of ultrafast phenomena and they are interfered with a chirped reference wave to record a digital hologram. Wavefronts at different times can be reconstructed separately from the recorded hologram when the reference pulse can be treated as a quasi-monochromatic wave during the pulse width of each object pulse. The feasibility of this method is demonstrated by numerical simulation.

9th International Symposium on Ultrafast Processes in Spectroscopy

CERN Document Server

Silvestri, S; Denardo, G

1996-01-01

This volume is a collection of papers presented at the Ninth International Symposium on "Ultrafast Processes in Spectroscopy" (UPS '95) held at the International Centre for Theo­ retical Physics (ICTP), Trieste (Italy), October 30 -November 3, 1995. These meetings have become recognized as the major forum in Europe for discussion of new work in this rapidly moving field. The UPS'95 Conference in Trieste brought together a multidisciplinary group of researchers sharing common interests in the generation of ultrashort optical pulses and their application to studies of ultrafast phenomena in physics, chemistry, material science, electronics, and biology. It was attended by approximately 250 participants from 20 countries and the five-day program comprises more than 200 papers. The progress of both technology and applications in the field of ultrafast processes during these last years is truly remarkable. The advent of all solid state femtosecond lasers and the extension of laser wavelengths by frequency convers...

Ultrafast Spectroscopic Noninvasive Probe of Vertical Carrier Transport in Heterostructure Devices

Science.gov (United States)

2016-03-01

ARL-TR-7618 ● MAR 2016 US Army Research Laboratory Ultrafast Spectroscopic Noninvasive Probe of Vertical Carrier Transport in...US Army Research Laboratory Ultrafast Spectroscopic Noninvasive Probe of Vertical Carrier Transport in Heterostructure Devices by Blair C...Spectroscopic Noninvasive Probe of Vertical Carrier Transport in Heterostructure Devices 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT

Passive, active, and hybrid mode-locking in a self-optimized ultrafast diode laser

Science.gov (United States)

Alloush, M. Ali; Pilny, Rouven H.; Brenner, Carsten; Klehr, Andreas; Knigge, Andrea; Tränkle, Günther; Hofmann, Martin R.

2018-02-01

Semiconductor lasers are promising sources for generating ultrashort pulses. They are directly electrically pumped, allow for a compact design, and therefore they are cost-effective alternatives to established solid-state systems. Additionally, their emission wavelength depends on the bandgap which can be tuned by changing the semiconductor materials. Theoretically, the obtained pulse width can be few tens of femtoseconds. However, the generated pulses are typically in the range of several hundred femtoseconds only. Recently, it was shown that by implementing a spatial light modulator (SLM) for phase and amplitude control inside the resonator the optical bandwidth can be optimized. Consequently, by using an external pulse compressor shorter pulses can be obtained. We present a Fourier-Transform-External-Cavity setup which utilizes an ultrafast edge-emitting diode laser. The used InGaAsP diode is 1 mm long and emits at a center wavelength of 850 nm. We investigate the best conditions for passive, active and hybrid mode-locking operation using the method of self-adaptive pulse shaping. For passive mode-locking, the bandwidth is increased from 2.34 nm to 7.2 nm and ultrashort pulses with a pulse width of 216 fs are achieved after external pulse compression. For active and hybrid mode-locking, we also increased the bandwidth. It is increased from 0.26 nm to 5.06 nm for active mode-locking and from 3.21 nm to 8.7 nm for hybrid mode-locking. As the pulse width is strongly correlated with the bandwidth of the laser, we expect further reduction in the pulse duration by increasing the bandwidth.

Advancements in n-type base crystalline silicon solar cells and their emergence in the photovoltaic industry.

Science.gov (United States)

ur Rehman, Atteq; Lee, Soo Hong

2013-01-01

The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed.

Development of a Silicon Based Electron Beam Transmission Window for Use in a KrF Excimer Laser System

International Nuclear Information System (INIS)

Gentile, C.A.; Fan, H.M.; Hartfield, J.W.; Hawryluk, R.J.; Hegeler, F.; Heitzenroeder, P.J.; Jun, C.H.; Ku, L.P.; LaMarche, P.H.; Myers, M.C.; Parker, J.J.; Parsells, R.F.; Payen, M.; Raftopoulos, S.; Sethian, J.D.

2002-01-01

The Princeton Plasma Physics Laboratory (PPPL), in collaboration with the Naval Research Laboratory (NRL), is currently investigating various novel materials (single crystal silicon, , and ) for use as electron-beam transmission windows in a KrF excimer laser system. The primary function of the window is to isolate the active medium (excimer gas) from the excitation mechanism (field-emission diodes). Chosen window geometry must accommodate electron energy transfer greater than 80% (750 keV), while maintaining structural integrity during mechanical load (1.3 to 2.0 atm base pressure differential, approximate 0.5 atm cyclic pressure amplitude, 5 Hz repetition rate) and thermal load across the entire hibachi area (approximate 0.9 W · cm superscript ''-2''). In addition, the window must be chemically resistant to attack by fluorine free-radicals (hydrofluoric acid, secondary). In accordance with these structural, functional, and operational parameters, a 22.4 mm square silicon prototype window, coated with 500 nm thin-film silicon nitride (Si 3 N 4 ), has been fabricated. The window consists of 81 square panes with a thickness of 0.019 mm ± 0.001 mm. Stiffened (orthogonal) sections are 0.065 mm in width and 0.500 mm thick (approximate). Appended drawing (Figure 1) depicts the window configuration. Assessment of silicon (and silicon nitride) material properties and CAD modeling and analysis of the window design suggest that silicon may be a viable solution to inherent parameters and constraints

Progress in Ultrafast Intense Laser Science

CERN Document Server

Yamanouchi, Kaoru; Li, Ruxin; Chin, See Leang

2009-01-01

The PUILS series presents Progress in Ultrafast Intense Laser Science, a newly emerging interdisciplinary research field spanning atomic and molecular physics, molecular science, and optical science. PUILS has been stimulated by the recent development of ultrafast laser technologies. Each volume contains approximately 15 chapters, authored by researchers at the forefront. Each chapter opens with an overview of the topics to be discussed, so that researchers, who are not experts in the specific topics, as well as graduate students can grasp the importance and attractions of this sub-field of research, and these are followed by reports of cutting-edge discoveries. This fourth volume covers a broad range of topics from this interdisciplinary research field, focusing on strong field ionization of atoms; excitation, ionization and fragmentation of molecules; nonlinear intense optical phenomena and attosecond pulses; and laser - solid interactions and photoemission.

Bio-inspired water repellent surfaces produced by ultrafast laser structuring of silicon

International Nuclear Information System (INIS)

Barberoglou, M.; Zorba, V.; Stratakis, E.; Spanakis, E.; Tzanetakis, P.; Anastasiadis, S.H.; Fotakis, C.

2009-01-01

We report here an efficient method for preparing stable superhydrophobic and highly water repellent surfaces by irradiating silicon wafers with femtosecond laser pulses and subsequently coating them with chloroalkylsilane monolayers. By varying the laser pulse fluence on the surface one can successfully control its wetting properties via a systematic and reproducible variation of roughness at micro- and nano-scale, which mimics the topology of natural superhydrophobic surfaces. The self-cleaning and water repellent properties of these artificial surfaces are investigated. It is found that the processed surfaces are among the most water repellent surfaces ever reported. These results may pave the way for the implementation of laser surface microstructuring techniques for the fabrication of superhydrophobic and self-cleaning surfaces in different kinds of materials as well

Influence of temporal–spectral effects on ultrafast fiber coherent polarization beam combining system

International Nuclear Information System (INIS)

Yu, H L; Ma, P F; Wang, X L; Su, R T; Zhou, P; Chen, J B

2015-01-01

The active coherent polarization beam combining (CPBC) technique has been experimentally proved to be a promising approach for the energy and power scaling of ultrashort laser pulses, despite the tremendous challenge in temporal synchronization, dispersion management and nonlinearity control. In order to develop a comprehensive theoretical model to investigate the influence of temporal–spectral effects on ultrafast fiber active CPBC systems, a generalized nonlinear Schrödinger equation carrying spectral factors is used to depict the propagation of ultrashort pulses in fiber amplifier channels and ultrashort-pulsed Gaussian beams (PGBs) carrying temporal–spatial factors are utilized to picture the propagation of ultrashort pulses in the free space. To the best of our knowledge, the influence of different temporal–spectral effects has been segregated for the first time and corresponding analytical equations have been strictly derived to link the combining efficiency with specific factors. Based on our analysis, the optical path difference (OPD) has the most detrimental impact on the combining efficiency because of the high controlling accuracy and anti-interference requirements. For instance, the OPD must be controlled in ∼  ±14 μm to achieve a combining efficiency of above 95% for combining ultrashort laser pulses with a 3 dB spectral bandwidth of 13 nm centered at 1064 nm. Besides, the analytical expression also demonstrates that the impact of self-phase modulation on the combining efficiency has no dependence on spectral bandwidth and only depends on the B integral difference if neglecting the direct influence of the peak power difference. Our analysis also indicates that the group velocity dispersion has relatively small influence on the combining efficiency. These formulas can be used to diagnose the influence of temporal–spectral effects and provide useful guidelines for the design or optimization of the active CPBC system of ultrafast

Pump polarization insensitive and efficient laser-diode pumped Yb:KYW ultrafast oscillator.

Science.gov (United States)

Wang, Sha; Wang, Yan-Biao; Feng, Guo-Ying; Zhou, Shou-Huan

2016-02-01

We theoretically and experimentally report and evaluate a novel split laser-diode (LD) double-end pumped Yb:KYW ultrafast oscillator aimed at improving the performance of an ultrafast laser. Compared to a conventional unpolarized single-LD end-pumped ultrafast laser system, we improve the laser performance such as absorption efficiency, slope efficiency, cw mode-locking threshold, and output power by this new structure LD-pumped Yb:KYW ultrafast laser. Experiments were carried out with a 1 W output fiber-coupled LD. Experimental results show that the absorption increases from 38.7% to 48.4%, laser slope efficiency increases from 18.3% to 24.2%, cw mode-locking threshold decreases 12.7% from 630 to 550 mW in cw mode-locking threshold, and maximum output-power increases 28.5% from 158.4 to 221.5 mW when we switch the pump scheme from an unpolarized single-end pumping structure to a split LD double-end pumping structure.

Multiplane wave imaging increases signal-to-noise ratio in ultrafast ultrasound imaging

International Nuclear Information System (INIS)

Tiran, Elodie; Deffieux, Thomas; Correia, Mafalda; Maresca, David; Osmanski, Bruno-Felix; Pernot, Mathieu; Tanter, Mickael; Sieu, Lim-Anna; Bergel, Antoine; Cohen, Ivan

2015-01-01

Ultrafast imaging using plane or diverging waves has recently enabled new ultrasound imaging modes with improved sensitivity and very high frame rates. Some of these new imaging modalities include shear wave elastography, ultrafast Doppler, ultrafast contrast-enhanced imaging and functional ultrasound imaging. Even though ultrafast imaging already encounters clinical success, increasing even more its penetration depth and signal-to-noise ratio for dedicated applications would be valuable.Ultrafast imaging relies on the coherent compounding of backscattered echoes resulting from successive tilted plane waves emissions; this produces high-resolution ultrasound images with a trade-off between final frame rate, contrast and resolution. In this work, we introduce multiplane wave imaging, a new method that strongly improves ultrafast images signal-to-noise ratio by virtually increasing the emission signal amplitude without compromising the frame rate. This method relies on the successive transmissions of multiple plane waves with differently coded amplitudes and emission angles in a single transmit event. Data from each single plane wave of increased amplitude can then be obtained, by recombining the received data of successive events with the proper coefficients.The benefits of multiplane wave for B-mode, shear wave elastography and ultrafast Doppler imaging are experimentally demonstrated. Multiplane wave with 4 plane waves emissions yields a 5.8  ±  0.5 dB increase in signal-to-noise ratio and approximately 10 mm in penetration in a calibrated ultrasound phantom (0.7 d MHz −1 cm −1 ). In shear wave elastography, the same multiplane wave configuration yields a 2.07  ±  0.05 fold reduction of the particle velocity standard deviation and a two-fold reduction of the shear wave velocity maps standard deviation. In functional ultrasound imaging, the mapping of cerebral blood volume results in a 3 to 6 dB increase of the contrast-to-noise ratio in

Ultrafast Paper Thermometers Based on a Green Sensing Ink.

Science.gov (United States)

Tao, Xinglei; Jia, Hanyu; He, Yonglin; Liao, Shenglong; Wang, Yapei

2017-03-24

With the use of an ionic liquid as the ultrathermosensitive fluid, a paper thermometer is successfully developed with intrinsic ability of ultrafast response and high stability upon temperature change. The fluidic nature allows the ionic liquid to be easily deposited on paper by pen writing or inkjet printing, affording great promise for large-scale fabrication of low-cost paper sensors. Owing to the advantages of nonvolatilization, excellent continuity and deformability, the thermosensitive ink trapped within the cellulose fibers of paper matrix has no leakage or evaporation at open states, ensuring the excellent stability and repeatability of thermal sensing against arbitrary bending and folding operation. By shortening the heat exchange distance between ionic liquid and samples, it takes only 8 s for the thermometer to reach an electrical equilibrium at a given temperature. Moreover, the paper thermometer can be applied to remotely monitor temperature change with the combination of a wireless communication technology.

Tracking ultrafast relaxation dynamics of furan by femtosecond photoelectron imaging

International Nuclear Information System (INIS)

Liu, Yuzhu; Knopp, Gregor; Qin, Chaochao; Gerber, Thomas

2015-01-01

Graphical abstract: - Highlights: • Relaxation dynamics of furan are tracked by femtosecond photoelectron imaging. • The mechanism for ultrafast formation of α-carbene and β-carbene is proposed. • Ultrafast internal conversion from S 2 to S 1 is observed. • The transient characteristics of the fragment ions are obtained. • Single-color multi-photon ionization dynamics at 800 nm are also studied. - Abstract: Ultrafast internal conversion dynamics of furan has been studied by femtosecond photoelectron imaging (PEI) coupled with photofragmentation (PF) spectroscopy. Photoelectron imaging of single-color multi-photon ionization and two-color pump–probe ionization are obtained and analyzed. Photoelectron bands are assigned to the related states. The time evolution of the photoelectron signal by pump–probe ionization can be well described by a biexponential decay: two rapid relaxation pathways with time constants of ∼15 fs and 85 (±11) fs. The rapid relaxation is ascribed to the ultrafast internal conversion (IC) from the S 2 state to the vibrationally hot S 1 state. The second relaxation process is attributed to the redistributions and depopulation of secondarily populated high vibronic S 1 state and the formation of α-carbene and β-carbene by H immigration. Additionally, the transient characteristics of the fragment ions are also measured and discussed as a complementary understanding

Concept and design of a beam blanker with integrated photoconductive switch for ultrafast electron microscopy.

Science.gov (United States)

Weppelman, I G C; Moerland, R J; Hoogenboom, J P; Kruit, P

2018-01-01

We present a new method to create ultrashort electron pulses by integrating a photoconductive switch with an electrostatic deflector. This paper discusses the feasibility of such a system by analytical and numerical calculations. We argue that ultrafast electron pulses can be achieved for micrometer scale dimensions of the blanker, which are feasible with MEMS-based fabrication technology. According to basic models, the design presented in this paper is capable of generating 100 fs electron pulses with spatial resolutions of less than 10 nm. Our concept for an ultrafast beam blanker (UFB) may provide an attractive alternative to perform ultrafast electron microscopy, as it does not require modification of the microscope nor realignment between DC and pulsed mode of operation. Moreover, only low laser pulse energies are required. Due to its small dimensions the UFB can be inserted in the beam line of a commercial microscope via standard entry ports for blankers or variable apertures. The use of a photoconductive switch ensures minimal jitter between laser and electron pulses. Copyright © 2017 Elsevier B.V. All rights reserved.

Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

KAUST Repository

Ghoneim, Mohamed T.

2015-04-24

A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)-(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational voltages to achieve coercive electric fields, reduces the sol-gel coating cycles required (i.e., more cost-effective), and, fabrication wise, is more suitable for further scaling of lateral dimensions to the nano-scale due to the larger feature size-to-depth aspect ratio (critical for ultra-high density non-volatile memory applications). Utilizing the inverse proportionality between substrate\\'s thickness and its flexibility, traditional PZT based FeRAM on silicon is transformed through a transfer-less manufacturable process into a flexible form that matches organic electronics\\' flexibility while preserving the superior performance of silicon CMOS electronics. Each memory cell in a FeRAM array consists of two main elements; a select/access transistor, and a storage ferroelectric capacitor. Flexible transistors on silicon have already been reported. In this work, we focus on the storage ferroelectric capacitors, and report, for the first time, its performance after transformation into a flexible version, and assess its key memory parameters while bent at 0.5 cm minimum bending radius.

Versatile ultrafast pump-probe imaging with high sensitivity CCD camera

OpenAIRE

Pezeril , Thomas; Klieber , Christoph; Temnov , Vasily; Huntzinger , Jean-Roch; Anane , Abdelmadjid

2012-01-01

International audience; A powerful imaging technique based on femtosecond time-resolved measurements with a high dynamic range, commercial CCD camera is presented. Ultrafast phenomena induced by a femtosecond laser pump are visualized through the lock-in type acquisition of images recorded by a femtosecond laser probe. This technique allows time-resolved measurements of laser excited phenomena at multiple probe wavelengths (spectrometer mode) or conventional imaging of the sample surface (ima...

MEMS monocrystalline-silicon based thermal devices for chemical and microfluidic applications

NARCIS (Netherlands)

Mihailovic, M.

2011-01-01

This thesis explores the employment of monocrystalline silicon in microsystems as an active material for different thermal functions, such as heat generation and heat transfer by conduction. In chapter 1 applications that need thermal micro devices, micro heaters and micro heat exchangers, are

Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors.

Science.gov (United States)

Marrs, Michael A; Raupp, Gregory B

2016-07-26

Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm² and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate.

Ultrafast characterization of optoelectronic devices and systems

Science.gov (United States)

Zheng, Xuemei

reaching 54%. The response time was found to not depend on either the device bias or excitation power. Nitrogen-implanted GaAs is a novel ion-implanted semiconductor. Its intrinsic property of high density of incorporated defects due to the implantation process makes it a promising candidate for ultrafast photodetection. A novel photodetector based on N+-GaAs has been successfully fabricated and its performance was characterized, using again our EO sampler. Our photodetectors, based on N+-GaAs, exhibit ˜2.1 ps FWHM photoresponse and very high sensitivity.

Fast MR imaging and ultrafast MR imaging of fetal central nervous system abnormalities

Energy Technology Data Exchange (ETDEWEB)

Shakudo, Miyuki; Manabe, Takao; Murata, Katsuko; Matsuo, Ryoichi; Oda, Junro [Osaka City General Hospital (Japan); Inoue, Yuichi; Mochizuki, Kunizo; Yamada, Ryusaku

2001-12-01

The aims of this study were two: to compare the efficacy of fast MRI (breath-hold fast spin-echo T2-weighted and fast gradient-echo T1-weighted sequence) and ultrafast MRI (half-Fourier acquisition single-shot turbo spin-echo sequence) in evaluation of fetal central nervous system (CNS) abnormalities at late gestational age, and to compare the capability of fast MRI and ultrafast MRI to assess fetal CNS abnormalities with that of prenatal ultrasonography (US). Forty-nine women with fetuses at gestational ages of 26-39 weeks underwent fast MRI (29 patients) or ultrafast MRI (20 patients). In detection of motion artifact, visualization of the lateral and 4th ventricles, and differentiation between gray and white matter in cerebral hemispheres, ultrafast MRI was significantly superior to fast MRI (p<0.0001, Mann-Whitney U test). In 25 of 43 cases, US and MR diagnoses were the same and consistent with postnatal diagnosis. In 10 of 43 cases, MRI demonstrated findings additional to or different from those of US, and MR findings were confirmed postnatally. MRI, particularly ultrafast MRI, is useful for demonstrating CNS abnormalities in situations in which US is suggestive but not definitive. (author)

Ultrafast biophotonics

CERN Document Server

Vasa, P

2016-01-01

This book presents emerging contemporary optical techniques of ultrafast science which have opened entirely new vistas for probing biological entities and processes. The spectrum reaches from time-resolved imaging and multiphoton microscopy to cancer therapy and studies of DNA damage. The book displays interdisciplinary research at the interface of physics and biology. Emerging topics on the horizon are also discussed, like the use of squeezed light, frequency combs and terahertz imaging as the possibility of mimicking biological systems. The book is written in a manner to make it readily accessible to researchers, postgraduate biologists, chemists, engineers, and physicists and students of optics, biomedical optics, photonics and biotechnology.

Ultrafast photoelectron spectroscopy of small molecule organic films

Science.gov (United States)

Read, Kendall Laine

As research in the field of ultrafast optics has produced shorter and shorter pulses, at an ever-widening range of frequencies, ultrafast spectroscopy has grown correspondingly. In particular, ultrafast photoelectron spectroscopy allows direct observation of electrons in transient or excited states, regardless of the eventual relaxation mechanisms. High-harmonic conversion of 800nm, femtosecond, Ti:sapphire laser pulses allows excite/probe spectroscopy down into atomic core level states. To this end, an ultrafast, X-UV photoelectron spectroscopic system is described, including design considerations for the high-harmonic generation line, the time of flight detector, and the subsequent data collection electronics. Using a similar experimental setup, I have performed several ultrafast, photoelectron excited state decay studies at the IBM, T. J. Watson Research Center. All of the observed materials were electroluminescent thin film organics, which have applications as the emitter layer in organic light emitting devices. The specific materials discussed are: Alq, BAlq, DPVBi, and Alq doped with DCM or DMQA. Alq:DCM is also known to lase at low photoexcitation thresholds. A detailed understanding of the involved relaxation mechanisms is beneficial to both applications. Using 3.14 eV excite, and 26.7 eV probe, 90 fs laser pulses, we have observed the lowest unoccupied molecular orbital (LUMO) decay rate over the first 200 picoseconds. During this time, diffusion is insignificant, and all dynamics occur in the absence of electron transport. With excitation intensities in the range of 100μJ/cm2, we have modeled the Alq, BAlq, and DPVBi decays via bimolecular singlet-singlet annihilation. At similar excitations, we have modeled the Alq:DCM decay via Förster transfer, stimulated emission, and excimeric formation. Furthermore, the Alq:DCM occupied to unoccupied molecular orbital energy gap was seen to shrink as a function of excite-to-probe delay, in accordance with the

Ultrafast Holographic Image Recording by Single Shot Femtosecond Spectral Hole Burning

National Research Council Canada - National Science Library

Rebane, Aleksander

2001-01-01

.... This allowed us to record image holograms with 150-fs duration pulses without need to accumulate the SHB effect from many exposures. Results of this research show that it is possible to perform optical recording of data in frequency-domain on ultrafast time scale. These results can be used also as a new diagnostic tool for femtosecond dynamics in various ultrafast optical interactions.

Silicon oxynitride based photonics

NARCIS (Netherlands)

Worhoff, Kerstin; Klein, E.J.; Hussein, M.G.; Driessen, A.; Marciniak, M.; Jaworski, M.; Zdanowicz, M.

2008-01-01

Silicon oxynitride is a very attractive material for integrated optics. Besides possessing excellent optical properties it can be deposited with refractive indices varying over a wide range by tuning the material composition. In this contribution we will summarize the key properties of this material

Ultra-fast ipsilateral DPOAE adaptation not modulated by attention?

Science.gov (United States)

Dalhoff, Ernst; Zelle, Dennis; Gummer, Anthony W.

2018-05-01

Efferent stimulation of outer hair cells is supposed to attenuate cochlear amplification of sound waves and is accompanied by reduced DPOAE amplitudes. Recently, a method using two subsequent f2 pulses during presentation of a longer f1 pulse was introduced to measure fast ipsilateral adaptation effects on separated DPOAE components. Compensating primary-tone onsets for their latencies at the f2-tonotopic place, the average adaptation measured in four normal-hearing subjects was 5.0 dB with a time constant below 5 ms. In the present study, two experiments were performed to determine the origin of this ultra-fast ipsilateral adaptation effect. The first experiment measured ultra-fast ipsilateral adaptation using a two-pulse paradigm at three frequencies in the four subjects, while controlling for visual attention of the subjects. The other experiment also controlled for visual attention, but utilized a sequence of f2 short pulses in the presence of a continuous f1 tone to sample ipsilateral adaptation effects with longer time constants in eight subjects. In the first experiment, no significant change in the ultra-fast adaptation between non-directed attention and visual attention could be detected. In contrast, the second experiment revealed significant changes in the magnitude of the slower ipsilateral adaptation in the visual-attention condition. In conclusion, the lack of an attentional influence indicates that the ultra-fast ipsilateral DPOAE adaptation is not solely mediated by the medial olivocochlear reflex.

Effects of slag-based silicon fertilizer on rice growth and brown-spot resistance.

Science.gov (United States)

Ning, Dongfeng; Song, Alin; Fan, Fenliang; Li, Zhaojun; Liang, Yongchao

2014-01-01

It is well documented that slag-based silicon fertilizers have beneficial effects on the growth and disease resistance of rice. However, their effects vary greatly with sources of slag and are closely related to availability of silicon (Si) in these materials. To date, few researches have been done to compare the differences in plant performance and disease resistance between different slag-based silicon fertilizers applied at the same rate of plant-available Si. In the present study both steel and iron slags were chosen to investigate their effects on rice growth and disease resistance under greenhouse conditions. Both scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to examine the effects of slags on ultrastructural changes in leaves of rice naturally infected by Bipolaris oryaze, the causal agent of brown spot. The results showed that both slag-based Si fertilizers tested significantly increased rice growth and yield, but decreased brown spot incidence, with steel slag showing a stronger effect than iron slag. The results of SEM analysis showed that application of slags led to more pronounced cell silicification in rice leaves, more silica cells, and more pronounced and larger papilla as well. The results of TEM analysis showed that mesophyll cells of slag-untreated rice leaf were disorganized, with colonization of the fungus (Bipolaris oryzae), including chloroplast degradation and cell wall alterations. The application of slag maintained mesophyll cells relatively intact and increased the thickness of silicon layer. It can be concluded that applying slag-based fertilizer to Si-deficient paddy soil is necessary for improving both rice productivity and brown spot resistance. The immobile silicon deposited in host cell walls and papillae sites is the first physical barrier for fungal penetration, while the soluble Si in the cytoplasm enhances physiological or induced resistance to fungal colonization.

Ultrafast Capillary Electrophoresis Isolation of DNA Aptamer for the PCR Amplification-Based Small Analyte Sensing

Directory of Open Access Journals (Sweden)

Emmanuelle eFiore

2015-08-01

Full Text Available Here, we report a new homogeneous DNA amplification-based aptamer assay for small analyte sensing. The aptamer of adenosine chosen as the model analyte was split into two fragments able to assemble in the presence of target. Primers were introduced at extremities of one fragment in order to generate the amplifiable DNA component. The amount of amplifiable fragment was quantifiable by Real-Time Polymerase Chain Reaction (RT-PCR amplification and directly reliable on adenosine concentration. This approach combines the very high separation efficiency and the homogeneous format (without immobilization of capillary electrophoresis and the sensitivity of real time PCR amplification. An ultrafast isolation of target-bound split aptamer (60 s was developed by designing a capillary electrophoresis input/ouput scheme. Such method was successfully applied to the determination of adenosine with a LOD of 1 µM.

Superhydrophobic SERS substrates based on silicon hierarchical nanostructures

Science.gov (United States)

Chen, Xuexian; Wen, Jinxiu; Zhou, Jianhua; Zheng, Zebo; An, Di; Wang, Hao; Xie, Weiguang; Zhan, Runze; Xu, Ningsheng; Chen, Jun; She, Juncong; Chen, Huanjun; Deng, Shaozhi

2018-02-01

Silicon nanostructures have been cultivated as promising surface enhanced Raman scattering (SERS) substrates in terms of their low-loss optical resonance modes, facile functionalization, and compatibility with today’s state-of-the-art CMOS techniques. However, unlike their plasmonic counterparts, the electromagnetic field enhancements induced by silicon nanostructures are relatively small, which restrict their SERS sensing limit to around 10-7 M. To tackle this problem, we propose here a strategy for improving the SERS performance of silicon nanostructures by constructing silicon hierarchical nanostructures with a superhydrophobic surface. The hierarchical nanostructures are binary structures consisted of silicon nanowires (NWs) grown on micropyramids (MPs). After being modified with perfluorooctyltriethoxysilane (PFOT), the nanostructure surface shows a stable superhydrophobicity with a high contact angle of ˜160°. The substrate can allow for concentrating diluted analyte solutions into a specific area during the evaporation of the liquid droplet, whereby the analytes are aggregated into a small volume and can be easily detected by the silicon nanostructure SERS substrate. The analyte molecules (methylene blue: MB) enriched from an aqueous solution lower than 10-8 M can be readily detected. Such a detection limit is ˜100-fold lower than the conventional SERS substrates made of silicon nanostructures. Additionally, the detection limit can be further improved by functionalizing gold nanoparticles onto silicon hierarchical nanostructures, whereby the superhydrophobic characteristics and plasmonic field enhancements can be combined synergistically to give a detection limit down to ˜10-11 M. A gold nanoparticle-functionalized superhydrophobic substrate was employed to detect the spiked melamine in liquid milk. The results showed that the detection limit can be as low as 10-5 M, highlighting the potential of the proposed superhydrophobic SERS substrate in

New Aspects of Photocurrent Generation at Graphene pn Junctions Revealed by Ultrafast Optical Measurements

Science.gov (United States)

Aivazian, Grant; Sun, Dong; Jones, Aaron; Ross, Jason; Yao, Wang; Cobden, David; Xu, Xiaodong

2012-02-01

The remarkable electrical and optical properties of graphene make it a promising material for new optoelectronic applications. However, one important, but so far unexplored, property is the role of hot carriers in charge and energy transport at graphene interfaces. Here we investigate the photocurrent (PC) dynamics at a tunable graphene pn junction using ultrafast scanning PC microscopy. Pump-probe measurements show a temperature dependent relaxation time of photogenerated carriers that increases from 1.5ps at 290K to 4ps at 20K; while the amplitude of the PC is independent of the lattice temperature. These observations imply that it is hot carriers, not phonons, which dominate ultrafast energy transport. Gate dependent measurements show many interesting features such as pump induced saturation, enhancement, and sign reversal of probe generated PC. These observations reveal that the underlying PC mechanism is a combination of the thermoelectric and built-in electric field effects. Our results enhance the understanding of non-equilibrium electron dynamics, electron-electron interactions, and electron-phonon interactions in graphene. They also determine fundamental limits on ultrafast device operation speeds (˜500 GHz) for graphene-based photodetectors.

Silicon Nano fabrication by Atomic Force Microscopy-Based Mechanical Processing

International Nuclear Information System (INIS)

Miyake, Sh.; Wang, M.; Kim, J.

2014-01-01

This paper reviews silicon nano fabrication processes using atomic force microscopy (AFM). In particular, it summarizes recent results obtained in our research group regarding AFM-based silicon nano fabrication through mechanochemical local oxidation by diamond tip sliding, as well as mechanical, electrical, and electromechanical processing using an electrically conductive diamond tip. Microscopic three-dimensional manufacturing mainly relies on etching, deposition, and lithography. Therefore, a special emphasis was placed on nano mechanical processes, mechanochemical reaction by potassium hydroxide solution etching, and mechanical and electrical approaches. Several important surface characterization techniques consisting of scanning tunneling microscopy and related techniques, such as scanning probe microscopy and AFM, were also discussed.

Annealing Kinetic Model Using Fast and Slow Metastable Defects for Hydrogenated-Amorphous-Silicon-Based Solar Cells

Directory of Open Access Journals (Sweden)

Seung Yeop Myong

2007-01-01

Full Text Available The two-component kinetic model employing “fast” and “slow” metastable defects for the annealing behaviors in pin-type hydrogenated-amorphous-silicon- (a-Si:H- based solar cells is simulated using a normalized fill factor. Reported annealing data on pin-type a-Si:H-based solar cells are revisited and fitted using the model to confirm its validity. It is verified that the two-component model is suitable for fitting the various experimental phenomena. In addition, the activation energy for annealing of the solar cells depends on the definition of the recovery time. From the thermally activated and high electric field annealing behaviors, the plausible microscopic mechanism on the defect removal process is discussed.

Optical properties of phosphorescent nano-silicon electrochemically doped with terbium

Energy Technology Data Exchange (ETDEWEB)

Gelloz, Bernard [Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan); Mentek, Romain; Koshida, Nobuyoshi [Tokyo University A and T, 2-24-16 Nakacho, Koganei, Tokyo 184-8588 (Japan)

2012-12-15

Hybrid thin films consisting of oxidized nano-silicon doped with terbium have been fabricated. Nano-silicon was formed by electrochemical etching of silicon wafers. Terbium was incorporated into nano-silicon pores by electrochemical deposition. Different oxidizing thermal treatments were applied to the films. The samples treated by high-pressure water vapor annealing (HWA) exhibited strong blue emission with a phosphorescent component, as previously reported by our group. The low temperature (260 C) HWA also led to strong emission from Tb{sup 3+} ions, whereas typical high temperature (900 C) treatment generally used to activate Tb{sup 3+} ions in silicon-based materials led to less luminescent samples. Spectroscopic and dynamic analyses suggest that terbium was incorporated as a separate oxide phase in the pores of the porous nano-silicon. The PL of the terbium phase and nano-silicon phase exhibit different temperature and excitation power dependences suggesting little optical or electronic interaction between the two phases. The luminescence of terbium is better activated at low temperature (260 C) than at high temperature (900 C). The hybrid material may find some applications in photonics, for instance as a display material. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Ultracompact high-efficiency polarising beam splitter based on silicon nanobrick arrays.

Science.gov (United States)

Zheng, Guoxing; Liu, Guogen; Kenney, Mitchell Guy; Li, Zile; He, Ping'an; Li, Song; Ren, Zhi; Deng, Qiling

2016-03-21

Since the transmission of anisotropic nano-structures is sensitive to the polarisation of an incident beam, a novel polarising beam splitter (PBS) based on silicon nanobrick arrays is proposed. With careful design of such structures, an incident beam with polarisation direction aligned with the long axis of the nanobrick is almost totally reflected (~98.5%), whilst that along the short axis is nearly totally transmitted (~94.3%). More importantly, by simply changing the width of the nanobrick we can shift the peak response wavelength from 1460 nm to 1625 nm, covering S, C and L bands of the fiber telecommunications windows. The silicon nanobrick-based PBS can find applications in many fields which require ultracompactness, high efficiency, and compatibility with semiconductor industry technologies.

Last Advances in Silicon-Based Optical Biosensors

Directory of Open Access Journals (Sweden)

Adrián Fernández Gavela

2016-02-01

Full Text Available We review the most important achievements published in the last five years in the field of silicon-based optical biosensors. We focus specially on label-free optical biosensors and their implementation into lab-on-a-chip platforms, with an emphasis on developments demonstrating the capability of the devices for real bioanalytical applications. We report on novel transducers and materials, improvements of existing transducers, new and improved biofunctionalization procedures as well as the prospects for near future commercialization of these technologies.

Last Advances in Silicon-Based Optical Biosensors.

Science.gov (United States)

Fernández Gavela, Adrián; Grajales García, Daniel; Ramirez, Jhonattan C; Lechuga, Laura M

2016-02-24

We review the most important achievements published in the last five years in the field of silicon-based optical biosensors. We focus specially on label-free optical biosensors and their implementation into lab-on-a-chip platforms, with an emphasis on developments demonstrating the capability of the devices for real bioanalytical applications. We report on novel transducers and materials, improvements of existing transducers, new and improved biofunctionalization procedures as well as the prospects for near future commercialization of these technologies.

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

Science.gov (United States)

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Process control of high rate microcrystalline silicon based solar cell deposition by optical emission spectroscopy

International Nuclear Information System (INIS)

Kilper, T.; Donker, M.N. van den; Carius, R.; Rech, B.; Braeuer, G.; Repmann, T.

2008-01-01

Silicon thin-film solar cells based on microcrystalline silicon (μc-Si:H) were prepared in a 30 x 30 cm 2 plasma-enhanced chemical vapor deposition reactor using 13.56 or 40.68 MHz plasma excitation frequency. Plasma emission was recorded by optical emission spectroscopy during μc-Si:H absorber layer deposition at deposition rates between 0.5 and 2.5 nm/s. The time course of SiH * and H β emission indicated strong drifts in the process conditions particularly at low total gas flows. By actively controlling the SiH 4 gas flow, the observed process drifts were successfully suppressed resulting in a more homogeneous i-layer crystallinity along the growth direction. In a deposition regime with efficient usage of the process gas, the μc-Si:H solar cell efficiency was enhanced from 7.9 % up to 8.8 % by applying process control

Antimicrobial activity of silica coated silicon nano-tubes (SCSNT) and silica coated silicon nano-particles (SCSNP) synthesized by gas phase condensation.

Science.gov (United States)

Tank, Chiti; Raman, Sujatha; Karan, Sujoy; Gosavi, Suresh; Lalla, Niranjan P; Sathe, Vasant; Berndt, Richard; Gade, W N; Bhoraskar, S V; Mathe, Vikas L

2013-06-01

Silica-coated, silicon nanotubes (SCSNTs) and silica-coated, silicon nanoparticles (SCSNPs) have been synthesized by catalyst-free single-step gas phase condensation using the arc plasma process. Transmission electron microscopy and scanning tunneling microscopy showed that SCSNTs exhibited a wall thickness of less than 1 nm, with an average diameter of 14 nm and a length of several 100 nm. Both nano-structures had a high specific surface area. The present study has demonstrated cheaper, resistance-free and effective antibacterial activity in silica-coated silicon nano-structures, each for two Gram-positive and Gram-negative bacteria. The minimum inhibitory concentration (MIC) was estimated, using the optical densitometric technique, and by determining colony-forming units. The MIC was found to range in the order of micrograms, which is comparable to the reported MIC of metal oxides for these bacteria. SCSNTs were found to be more effective in limiting the growth of multidrug-resistant Staphylococcus aureus over SCSNPs at 10 μg/ml (IC 50 = 100 μg/ml).

Electrochemical approach for monitoring the effect of anti tubulin drugs on breast cancer cells based on silicon nanograss electrodes

International Nuclear Information System (INIS)

Zanganeh, Somayeh; Khosravi, Safoora; Namdar, Naser; Amiri, Morteza Hassanpour; Gharooni, Milad; Abdolahad, Mohammad

2016-01-01

One of the most interested molecular research in the field of cancer detection is the mechanism of drug effect on cancer cells. Translating molecular evidence into electrochemical profiles would open new opportunities in cancer research. In this manner, applying nanostructures with anomalous physical and chemical properties as well as biocompatibility would be a suitable choice for the cell based electrochemical sensing. Silicon based nanostructure are the most interested nanomaterials used in electrochemical biosensors because of their compatibility with electronic fabrication process and well engineering in size and electrical properties. Here we apply silicon nanograss (SiNG) probing electrodes produced by reactive ion etching (RIE) on silicon wafer to electrochemically diagnose the effect of anticancer drugs on breast tumor cells. Paclitaxel (PTX) and mebendazole (MBZ) drugs have been used as polymerizing and depolymerizing agents of microtubules. PTX would perturb the anodic/cathodic responses of the cell-covered biosensor by binding phosphate groups to deformed proteins due to extracellular signal-regulated kinase (ERK"1"/"2) pathway. MBZ induces accumulation of Cytochrome C in cytoplasm. Reduction of the mentioned agents in cytosol would change the ionic state of the cells monitored by silicon nanograss working electrodes (SiNGWEs). By extending the contacts with cancer cells, SiNGWEs can detect minor signal transduction and bio recognition events, resulting in precise biosensing. Effects of MBZ and PTX drugs, (with the concentrations of 2 nM and 0.1 nM, respectively) on electrochemical activity of MCF-7 cells are successfully recorded which are corroborated by confocal and flow cytometry assays. - Highlights: • Electrochemical effect of MBZ and PTX (anti tubulin drugs) on breast cancer cells was detected. • Detection was carried by silicon nanograss electrodes(SiNGEs). • Signaling pathways activated in the cells by drug treatment, change the anodic

Electrochemical approach for monitoring the effect of anti tubulin drugs on breast cancer cells based on silicon nanograss electrodes

Energy Technology Data Exchange (ETDEWEB)

Zanganeh, Somayeh; Khosravi, Safoora; Namdar, Naser; Amiri, Morteza Hassanpour; Gharooni, Milad [Nano Electronic Center of Excellence, Nano Bio Electronic Devices Lab, School of Electrical and Computer Eng, University of Tehran, P.O. Box 14395/515, Tehran (Iran, Islamic Republic of); Nano Electronic Center of Excellence, Thin Film and Nanoelectronic Lab, School of Electrical and Computer Eng, University of Tehran, P.O. Box 14395/515, Tehran (Iran, Islamic Republic of); Abdolahad, Mohammad, E-mail: m.abdolahad@ut.ac.ir [Nano Electronic Center of Excellence, Nano Bio Electronic Devices Lab, School of Electrical and Computer Eng, University of Tehran, P.O. Box 14395/515, Tehran (Iran, Islamic Republic of); Nano Electronic Center of Excellence, Thin Film and Nanoelectronic Lab, School of Electrical and Computer Eng, University of Tehran, P.O. Box 14395/515, Tehran (Iran, Islamic Republic of)

2016-09-28

One of the most interested molecular research in the field of cancer detection is the mechanism of drug effect on cancer cells. Translating molecular evidence into electrochemical profiles would open new opportunities in cancer research. In this manner, applying nanostructures with anomalous physical and chemical properties as well as biocompatibility would be a suitable choice for the cell based electrochemical sensing. Silicon based nanostructure are the most interested nanomaterials used in electrochemical biosensors because of their compatibility with electronic fabrication process and well engineering in size and electrical properties. Here we apply silicon nanograss (SiNG) probing electrodes produced by reactive ion etching (RIE) on silicon wafer to electrochemically diagnose the effect of anticancer drugs on breast tumor cells. Paclitaxel (PTX) and mebendazole (MBZ) drugs have been used as polymerizing and depolymerizing agents of microtubules. PTX would perturb the anodic/cathodic responses of the cell-covered biosensor by binding phosphate groups to deformed proteins due to extracellular signal-regulated kinase (ERK{sup 1/2}) pathway. MBZ induces accumulation of Cytochrome C in cytoplasm. Reduction of the mentioned agents in cytosol would change the ionic state of the cells monitored by silicon nanograss working electrodes (SiNGWEs). By extending the contacts with cancer cells, SiNGWEs can detect minor signal transduction and bio recognition events, resulting in precise biosensing. Effects of MBZ and PTX drugs, (with the concentrations of 2 nM and 0.1 nM, respectively) on electrochemical activity of MCF-7 cells are successfully recorded which are corroborated by confocal and flow cytometry assays. - Highlights: • Electrochemical effect of MBZ and PTX (anti tubulin drugs) on breast cancer cells was detected. • Detection was carried by silicon nanograss electrodes(SiNGEs). • Signaling pathways activated in the cells by drug treatment, change the

Power scaling of ultrafast mid-IR source enabled by high-power fiber laser technology

Energy Technology Data Exchange (ETDEWEB)

Zhou, Gengji

2017-11-15

Ultrafast laser sources with high repetition-rate (>10 MHz) and tunable in the mid-infrared (IR) wavelength range of 7-18 μm hold promise for many important spectroscopy applications. Currently, these ultrafast mid- to longwavelength-IR sources can most easily be achieved via difference-frequency generation (DFG) between a pump beam and a signal beam. However, current ultrafast mid- to longwavelength-IR sources feature a low average power, which limits their applications. In this thesis, we propose and demonstrate a novel approach to power scaling of DFG-based ultrafast mid-IR laser sources. The essence of this novel approach is the generation of a high-energy signal beam. Both the pump beam and the signal beam are derived from a home-built Yb-fiber laser system that emits 165-fs pulses centered at 1035 nm with 30-MHz repetition rate and 14.5-W average power (corresponding to 483-nJ pulse energy). We employ fiber-optic self-phase modulation (SPM) to broaden the laser spectrum and generate isolated spectral lobes. Filtering the rightmost spectral lobe leads to femtosecond pulses with >10 nJ pulse energy. Tunable between 1.1-1.2 μm, this SPM-enabled ultrafast source exhibits ∝100 times higher pulse energy than can be obtained from Raman soliton sources in this wavelength range. We use this SPM-enabled source as the signal beam and part of the Yb-fiber laser output as the pump beam. By performing DFG in GaSe crystals, we demonstrate that power scaling of a DFG-based mid-IR source can be efficiently achieved by increasing the signal energy. The resulting mid-IR source is tunable from 7.4 μm to 16.8 μm. Up to 5.04-mW mid-IR pulses centered at 11 μm are achieved. The corresponding pulse energy is 167 pJ, representing nearly one order of magnitude improvement compared with other reported DFG-based mid-IR sources at this wavelength. Despite of low pulse energy, Raman soliton sources have become a popular choice as the signal source. We carry out a detailed study on

Power scaling of ultrafast mid-IR source enabled by high-power fiber laser technology

International Nuclear Information System (INIS)

Zhou, Gengji

2017-11-01

Ultrafast laser sources with high repetition-rate (>10 MHz) and tunable in the mid-infrared (IR) wavelength range of 7-18 μm hold promise for many important spectroscopy applications. Currently, these ultrafast mid- to longwavelength-IR sources can most easily be achieved via difference-frequency generation (DFG) between a pump beam and a signal beam. However, current ultrafast mid- to longwavelength-IR sources feature a low average power, which limits their applications. In this thesis, we propose and demonstrate a novel approach to power scaling of DFG-based ultrafast mid-IR laser sources. The essence of this novel approach is the generation of a high-energy signal beam. Both the pump beam and the signal beam are derived from a home-built Yb-fiber laser system that emits 165-fs pulses centered at 1035 nm with 30-MHz repetition rate and 14.5-W average power (corresponding to 483-nJ pulse energy). We employ fiber-optic self-phase modulation (SPM) to broaden the laser spectrum and generate isolated spectral lobes. Filtering the rightmost spectral lobe leads to femtosecond pulses with >10 nJ pulse energy. Tunable between 1.1-1.2 μm, this SPM-enabled ultrafast source exhibits ∝100 times higher pulse energy than can be obtained from Raman soliton sources in this wavelength range. We use this SPM-enabled source as the signal beam and part of the Yb-fiber laser output as the pump beam. By performing DFG in GaSe crystals, we demonstrate that power scaling of a DFG-based mid-IR source can be efficiently achieved by increasing the signal energy. The resulting mid-IR source is tunable from 7.4 μm to 16.8 μm. Up to 5.04-mW mid-IR pulses centered at 11 μm are achieved. The corresponding pulse energy is 167 pJ, representing nearly one order of magnitude improvement compared with other reported DFG-based mid-IR sources at this wavelength. Despite of low pulse energy, Raman soliton sources have become a popular choice as the signal source. We carry out a detailed study on

Tailoring the optical constants in single-crystal silicon with embedded silver nanostructures for advanced silicon photonics applications

International Nuclear Information System (INIS)

Akhter, Perveen; Huang, Mengbing; Spratt, William; Kadakia, Nirag; Amir, Faisal

2015-01-01

Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ∼50 nm, and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3–10% lower or higher than that of silicon for wavelengths below or beyond ∼815–900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10–100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics

Octave-Spanning Mid-IR Supercontinuum Generation with Ultrafast Cascaded Nonlinearities

DEFF Research Database (Denmark)

Zhou, Binbin; Guo, Hairun; Liu, Xing

2014-01-01

An octave-spanning mid-IR supercontinuum is observed experimentally using ultrafast cascaded nonlinearities in an LiInS2 quadratic nonlinear crystal pumped with 70 fs energetic mid-IR pulses and cut for strongly phase-mismatched second-harmonic generation.......An octave-spanning mid-IR supercontinuum is observed experimentally using ultrafast cascaded nonlinearities in an LiInS2 quadratic nonlinear crystal pumped with 70 fs energetic mid-IR pulses and cut for strongly phase-mismatched second-harmonic generation....

The spatial resolution of silicon-based electron detectors in beta-autoradiography.

Science.gov (United States)

Cabello, Jorge; Wells, Kevin

2010-03-21

Thin tissue autoradiography is an imaging modality where ex-vivo tissue sections are placed in direct contact with autoradiographic film. These tissue sections contain a radiolabelled ligand bound to a specific biomolecule under study. This radioligand emits beta - or beta+ particles ionizing silver halide crystals in the film. High spatial resolution autoradiograms are obtained using low energy radioisotopes, such as (3)H where an intrinsic 0.1-1 microm spatial resolution can be achieved. Several digital alternatives have been presented over the past few years to replace conventional film but their spatial resolution has yet to equal film, although silicon-based imaging technologies have demonstrated higher sensitivity compared to conventional film. It will be shown in this work how pixel size is a critical parameter for achieving high spatial resolution for low energy uncollimated beta imaging. In this work we also examine the confounding factors impeding silicon-based technologies with respect to spatial resolution. The study considers charge diffusion in silicon and detector noise, and this is applied to a range of radioisotopes typically used in autoradiography. Finally an optimal detector geometry to obtain the best possible spatial resolution for a specific technology and a specific radioisotope is suggested.

Hybrid Silicon-Based Organic/Inorganic Block Copolymers with Sol-Gel Active Moieties: Synthetic Advances, Self-Assembly and Applications in Biomedicine and Materials Science.

Science.gov (United States)

Czarnecki, Sebastian; Bertin, Annabelle

2018-03-07

Hybrid silicon-based organic/inorganic (multi)block copolymers are promising polymeric precursors to create robust nano-objects and nanomaterials due to their sol-gel active moieties via self-assembly in solution or in bulk. Such nano-objects and nanomaterials have great potential in biomedicine as nanocarriers or scaffolds for bone regeneration as well as in materials science as Pickering emulsifiers, photonic crystals or coatings/films with antibiofouling, antibacterial or water- and oil-repellent properties. Thus, this Review outlines recent synthetic efforts in the preparation of these hybrid inorganic/organic block copolymers, gives an overview of their self-assembled structures and finally presents recent examples of their use in the biomedical field and material science. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Determinations of silicon and phosphorus in Pepperbush standard reference material by neutron activation and x-ray fluorescence methods

International Nuclear Information System (INIS)

Mizumoto, Yoshihiko; Nishio, Hirofumi; Hayashi, Takeshi; Kusakabe, Toshio; Iwata, Shiro.

1987-01-01

Silicon and phosphorus contents in Pepperbush standard reference material were determined by neutron activation and X-ray fluorescence methods. In neutron activation analysis, β-ray spectra of 32 P produced by 31 P(n,γ) 32 P reaction on Pepperbush and standard samples were measured by a low background β-ray spectrometer. In X-ray fluorescence analysis, the standard samples were prepared by mixing the Pepperbush powder with silicon dioxide and diammonium hydrogenphosphate. Characteristic X-rays from the samples were analyzed by a wavelength dispersive X-ray fluorescence spectrometer. From the β and X-ray intensities, silicon and phosphorus contents in Pepperbush were determined to be 1840 ± 80 and 1200 ± 50 μg g -1 , respectively. (author)

Electron beam dynamics in an ultrafast transmission electron microscope with Wehnelt electrode

Energy Technology Data Exchange (ETDEWEB)

Bücker, K.; Picher, M.; Crégut, O. [Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504 CNRS, Université de Strasbourg, 23 rue du Loess, 67034 Strasbourg (France); LaGrange, T. [Interdisciplinary Centre for Electron Microscopy, École Polytechnique Fédérale de Lausanne, 1015 Lausanne (Switzerland); Reed, B.W.; Park, S.T.; Masiel, D.J. [Integrated Dynamic Electron Solutions, Inc., 5653 Stoneridge Drive 117, Pleasanton, CA 94588 (United States); Banhart, F., E-mail: florian.banhart@ipcms.unistra.fr [Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504 CNRS, Université de Strasbourg, 23 rue du Loess, 67034 Strasbourg (France)

2016-12-15

High temporal resolution transmission electron microscopy techniques have shown significant progress in recent years. Using photoelectron pulses induced by ultrashort laser pulses on the cathode, these methods can probe ultrafast materials processes and have revealed numerous dynamic phenomena at the nanoscale. Most recently, the technique has been implemented in standard thermionic electron microscopes that provide a flexible platform for studying material's dynamics over a wide range of spatial and temporal scales. In this study, the electron pulses in such an ultrafast transmission electron microscope are characterized in detail. The microscope is based on a thermionic gun with a Wehnelt electrode and is operated in a stroboscopic photoelectron mode. It is shown that the Wehnelt bias has a decisive influence on the temporal and energy spread of the picosecond electron pulses. Depending on the shape of the cathode and the cathode-Wehnelt distance, different emission patterns with different pulse parameters are obtained. The energy spread of the pulses is determined by space charge and Boersch effects, given by the number of electrons in a pulse. However, filtering effects due to the chromatic aberrations of the Wehnelt electrode allow the extraction of pulses with narrow energy spreads. The temporal spread is governed by electron trajectories of different length and in different electrostatic potentials. High temporal resolution is obtained by excluding shank emission from the cathode and aberration-induced halos in the emission pattern. By varying the cathode-Wehnelt gap, the Wehnelt bias, and the number of photoelectrons in a pulse, tradeoffs between energy and temporal resolution as well as beam intensity can be made as needed for experiments. Based on the characterization of the electron pulses, the optimal conditions for the operation of ultrafast TEMs with thermionic gun assembly are elaborated. - Highlights: • A detailed characterization of electron

Process for forming a porous silicon member in a crystalline silicon member

Science.gov (United States)

Northrup, M. Allen; Yu, Conrad M.; Raley, Norman F.

1999-01-01

Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gasses in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters.

Ultrafast Excited-State Dynamics of Diketopyrrolopyrrole (DPP)-Based Materials: Static versus Diffusion-Controlled Electron Transfer Process

KAUST Repository

Alsulami, Qana

2015-06-25

Singlet-to-triplet intersystem crossing (ISC) and photoinduced electron transfer (PET) of platinum(II) containing diketopyrrolopyrrole (DPP) oligomer in the absence and presence of strong electron-acceptor tetracyanoethylene (TCNE) were investigated using femtosecond and nanosecond transient absorption spectroscopy with broadband capabilities. The role of platinum(II) incorporation in those photophysical properties was evaluated by comparing the excited-state dynamics of DPP with and without the metal centers. The steady-state measurements reveal that platinum(II) incorporation facilitates dramatically the interactions between DPP-Pt(acac) and TCNE, resulting in charge transfer (CT) complex formation. The transient absorption spectra in the absence of TCNE reveal ultrafast ISC of DPP-Pt(acac) followed by their long-lived triplet state. In the presence of TCNE, PET from the excited DPP-Pt(acac) and DPP to TCNE, forming the radical ion pairs. The ultrafast PET which occurs statically from DPP-Pt(acac) to TCNE in picosecond regime, is much faster than that from DPP to TCNE (nanosecond time scale) which is diffusion-controlled process, providing clear evidence that PET rate is eventually controlled by the platinum(II) incorporation.

Ultrafast Excited-State Dynamics of Diketopyrrolopyrrole (DPP)-Based Materials: Static versus Diffusion-Controlled Electron Transfer Process

KAUST Repository

Alsulami, Qana; Aly, Shawkat Mohammede; Goswami, Subhadip; Alarousu, Erkki; Usman, Anwar; Schanze, Kirk S.; Mohammed, Omar F.

2015-01-01

Singlet-to-triplet intersystem crossing (ISC) and photoinduced electron transfer (PET) of platinum(II) containing diketopyrrolopyrrole (DPP) oligomer in the absence and presence of strong electron-acceptor tetracyanoethylene (TCNE) were investigated using femtosecond and nanosecond transient absorption spectroscopy with broadband capabilities. The role of platinum(II) incorporation in those photophysical properties was evaluated by comparing the excited-state dynamics of DPP with and without the metal centers. The steady-state measurements reveal that platinum(II) incorporation facilitates dramatically the interactions between DPP-Pt(acac) and TCNE, resulting in charge transfer (CT) complex formation. The transient absorption spectra in the absence of TCNE reveal ultrafast ISC of DPP-Pt(acac) followed by their long-lived triplet state. In the presence of TCNE, PET from the excited DPP-Pt(acac) and DPP to TCNE, forming the radical ion pairs. The ultrafast PET which occurs statically from DPP-Pt(acac) to TCNE in picosecond regime, is much faster than that from DPP to TCNE (nanosecond time scale) which is diffusion-controlled process, providing clear evidence that PET rate is eventually controlled by the platinum(II) incorporation.

Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.

1994-01-01

Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

Photonic-assisted ultrafast THz wireless access

DEFF Research Database (Denmark)

Yu, Xianbin; Chen, Ying; Galili, Michael

THz technology has been considered feasible for ultrafast wireless data communi- cation, to meet the increasing demand on next-generation fast wireless access, e.g., huge data file transferring and fast mobile data stream access. This talk reviews recent progress in high-speed THz wireless...

The Gigatracker: An ultra-fast and low-mass silicon pixel detector for the NA62 experiment

International Nuclear Information System (INIS)

Fiorini, M.; Carassiti, V.; Ceccucci, A.; Cortina, E.; Cotta Ramusino, A.; Dellacasa, G.; Garbolino, S.; Jarron, P.; Kaplon, J.; Kluge, A.; Mapelli, A.; Marchetto, F.; Martin, E.; Martoiu, S.; Mazza, G.; Morel, M.; Noy, M.; Nuessle, G.; Petrucci, F.; Riedler, P.

2011-01-01

The Gigatracker is a hybrid silicon pixel detector developed to track the highly intense NA62 hadron beam with a time resolution of 150 ps (rms). The beam spectrometer of the experiment is composed of three Gigatracker stations installed in vacuum in order to precisely measure momentum, time and direction of every traversing particle. Precise tracking demands a very low mass of the detector assembly ( 0 per station) in order to limit multiple scattering and beam hadronic interactions. The high rate and especially the high timing precision requirements are very demanding: two R and D options are ongoing and the corresponding prototype read-out chips have been recently designed and produced in 0.13μm CMOS technology. One solution makes use of a constant fraction discriminator and on-pixel analogue-based time-to-digital-converter (TDC); the other comprises a delay-locked loop based TDC placed at the end of each pixel column and a time-over-threshold discriminator with time-walk correction technique. The current status of the R and D program is overviewed and results from the prototype read-out chips test are presented.

Linear and ultrafast nonlinear plasmonics of single nano-objects

Science.gov (United States)

Crut, Aurélien; Maioli, Paolo; Vallée, Fabrice; Del Fatti, Natalia

2017-03-01

Single-particle optical investigations have greatly improved our understanding of the fundamental properties of nano-objects, avoiding the spurious inhomogeneous effects that affect ensemble experiments. Correlation with high-resolution imaging techniques providing morphological information (e.g. electron microscopy) allows a quantitative interpretation of the optical measurements by means of analytical models and numerical simulations. In this topical review, we first briefly recall the principles underlying some of the most commonly used single-particle optical techniques: near-field, dark-field, spatial modulation and photothermal microscopies/spectroscopies. We then focus on the quantitative investigation of the surface plasmon resonance (SPR) of metallic nano-objects using linear and ultrafast optical techniques. While measured SPR positions and spectral areas are found in good agreement with predictions based on Maxwell’s equations, SPR widths are strongly influenced by quantum confinement (or, from a classical standpoint, surface-induced electron scattering) and, for small nano-objects, cannot be reproduced using the dielectric functions of bulk materials. Linear measurements on single nano-objects (silver nanospheres and gold nanorods) allow a quantification of the size and geometry dependences of these effects in confined metals. Addressing the ultrafast response of an individual nano-object is also a powerful tool to elucidate the physical mechanisms at the origin of their optical nonlinearities, and their electronic, vibrational and thermal relaxation processes. Experimental investigations of the dynamical response of gold nanorods are shown to be quantitatively modeled in terms of modifications of the metal dielectric function enhanced by plasmonic effects. Ultrafast spectroscopy can also be exploited to unveil hidden physical properties of more complex nanosystems. In this context, two-color femtosecond pump-probe experiments performed on individual

Ultrafast electron microscopy in materials science, biology, and chemistry

International Nuclear Information System (INIS)

King, Wayne E.; Campbell, Geoffrey H.; Frank, Alan; Reed, Bryan; Schmerge, John F.; Siwick, Bradley J.; Stuart, Brent C.; Weber, Peter M.

2005-01-01

The use of pump-probe experiments to study complex transient events has been an area of significant interest in materials science, biology, and chemistry. While the emphasis has been on laser pump with laser probe and laser pump with x-ray probe experiments, there is a significant and growing interest in using electrons as probes. Early experiments used electrons for gas-phase diffraction of photostimulated chemical reactions. More recently, scientists are beginning to explore phenomena in the solid state such as phase transformations, twinning, solid-state chemical reactions, radiation damage, and shock propagation. This review focuses on the emerging area of ultrafast electron microscopy (UEM), which comprises ultrafast electron diffraction (UED) and dynamic transmission electron microscopy (DTEM). The topics that are treated include the following: (1) The physics of electrons as an ultrafast probe. This encompasses the propagation dynamics of the electrons (space-charge effect, Child's law, Boersch effect) and extends to relativistic effects. (2) The anatomy of UED and DTEM instruments. This includes discussions of the photoactivated electron gun (also known as photogun or photoelectron gun) at conventional energies (60-200 keV) and extends to MeV beams generated by rf guns. Another critical aspect of the systems is the electron detector. Charge-coupled device cameras and microchannel-plate-based cameras are compared and contrasted. The effect of various physical phenomena on detective quantum efficiency is discussed. (3) Practical aspects of operation. This includes determination of time zero, measurement of pulse-length, and strategies for pulse compression. (4) Current and potential applications in materials science, biology, and chemistry. UEM has the potential to make a significant impact in future science and technology. Understanding of reaction pathways of complex transient phenomena in materials science, biology, and chemistry will provide fundamental

Dielectric elastomers, with very high dielectric permittivity, based on silicone and ionic interpenetrating networks

DEFF Research Database (Denmark)

Yu, Liyun; Madsen, Frederikke Bahrt; Hvilsted, Søren

2015-01-01

permittivity and the Young's modulus of the elastomer. One system that potentially achieves this involves interpenetrating polymer networks (IPNs), based on commercial silicone elastomers and ionic networks from amino- and carboxylic acid-functional silicones. The applicability of these materials as DEs...... are obtained while dielectric breakdown strength and Young's modulus are not compromised. These good overall properties stem from the softening effect and very high permittivity of ionic networks – as high as ε′ = 7500 at 0.1 Hz – while the silicone elastomer part of the IPN provides mechanical integrity...

Synthesis of Silicon Nanocrystals in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with a grain size of at least less than 10 nm are widely recognized as one of the key materials in optoelectronic devices, electrodes of lithium battery, bio-medical labels. There is also important character that silicon is safe material to the environment and easily gets involved in existing silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. We explore the possibility of microplasma technologies for the efficient production of mono-dispersed nanocrystalline silicon particles in a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using very high frequency (VHF = 144 MHz) power source in a capillary glass tube with a volume of less than 1 μ-liter. Fundamental plasma parameters of VHF capacitively coupled microplasma were characterized by optical emission spectroscopy, showing electron density of approximately 1015 cm-3 and rotational temperature of 1500 K, respectively. Such high-density non-thermal reactive plasma has a capability of decomposing silicon tetrachloride into atomic silicon to produce supersaturated atomic silicon vapor, followed by gas phase nucleation via three-body collision. The particle synthesis in high-density plasma media is beneficial for promoting nucleation process. In addition, further growth of silicon nuclei was able to be favorably terminated in a short-residence time reactor. Micro Raman scattering spectrum showed that as-deposited particles were mostly amorphous silicon with small fraction of silicon nanocrystals. Transmission electron micrograph confirmed individual silicon nanocrystals of 3-15 nm size. Although those particles were not mono-dispersed, they were

Porous Silicon Nanowires

Science.gov (United States)

Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

2011-01-01

In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

Editorial

Science.gov (United States)

Bruzzi, Mara; Cartiglia, Nicolo; Pace, Emanuele; Talamonti, Cinzia

2015-10-01

The 10th edition of the International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices (RESMDD) was held in Florence, at Dipartimento di Fisica ed Astronomia on October 8-10, 2014. It has been aimed at discussing frontier research activities in several application fields as nuclear and particle physics, astrophysics, medical and solid-state physics. Main topics discussed in this conference concern performance of heavily irradiated silicon detectors, developments required for the luminosity upgrade of the Large Hadron Collider (HL-LHC), ultra-fast silicon detectors design and manufacturing, high-band gap semiconductor detectors, novel semiconductor-based devices for medical applications, radiation damage issues in semiconductors and related radiation-hardening technologies.

Plasma monitoring and PECVD process control in thin film silicon-based solar cell manufacturing

Directory of Open Access Journals (Sweden)

Gabriel Onno

2014-02-01

Full Text Available A key process in thin film silicon-based solar cell manufacturing is plasma enhanced chemical vapor deposition (PECVD of the active layers. The deposition process can be monitored in situ by plasma diagnostics. Three types of complementary diagnostics, namely optical emission spectroscopy, mass spectrometry and non-linear extended electron dynamics are applied to an industrial-type PECVD reactor. We investigated the influence of substrate and chamber wall temperature and chamber history on the PECVD process. The impact of chamber wall conditioning on the solar cell performance is demonstrated.

Tracking ultrafast relaxation dynamics of furan by femtosecond photoelectron imaging

Energy Technology Data Exchange (ETDEWEB)

Liu, Yuzhu, E-mail: yuzhu.liu@gmail.com [School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044 (China); Knopp, Gregor [Paul Scherrer Institute, Villigen 5232 (Switzerland); Qin, Chaochao [Department of Physics, Henan Normal University, Xinxiang 453007 (China); Gerber, Thomas [Paul Scherrer Institute, Villigen 5232 (Switzerland)

2015-01-13

Graphical abstract: - Highlights: • Relaxation dynamics of furan are tracked by femtosecond photoelectron imaging. • The mechanism for ultrafast formation of α-carbene and β-carbene is proposed. • Ultrafast internal conversion from S{sub 2} to S{sub 1} is observed. • The transient characteristics of the fragment ions are obtained. • Single-color multi-photon ionization dynamics at 800 nm are also studied. - Abstract: Ultrafast internal conversion dynamics of furan has been studied by femtosecond photoelectron imaging (PEI) coupled with photofragmentation (PF) spectroscopy. Photoelectron imaging of single-color multi-photon ionization and two-color pump–probe ionization are obtained and analyzed. Photoelectron bands are assigned to the related states. The time evolution of the photoelectron signal by pump–probe ionization can be well described by a biexponential decay: two rapid relaxation pathways with time constants of ∼15 fs and 85 (±11) fs. The rapid relaxation is ascribed to the ultrafast internal conversion (IC) from the S{sub 2} state to the vibrationally hot S{sub 1} state. The second relaxation process is attributed to the redistributions and depopulation of secondarily populated high vibronic S{sub 1} state and the formation of α-carbene and β-carbene by H immigration. Additionally, the transient characteristics of the fragment ions are also measured and discussed as a complementary understanding.

Complex Boron Redistribution in P+ Doped-polysilicon / Nitrogen Doped Silicon Bi-layers during Activation Annealing

Science.gov (United States)

Abadli, S.; Mansour, F.; Perrera, E. Bedel

We have investigated and modeled the complex phenomenon of boron (B) redistribution process in strongly doped silicon bilayers structure. A one-dimensional two stream transfer model well adapted to the particular structure of bi- layers and to the effects of strong-concentrations has been developed. This model takes into account the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method, using in-situ nitrogen- doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P+) layer. To avoid long redistributions, thermal annealing was carried out at relatively lowtemperatures (600 °C and 700 °C) for various times ranging between 30 minutes and 2 hours. The good adjustment of the simulated profiles with the experimental secondary ion mass spectroscopy (SIMS) profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders kinetics.

Oxidation and corrosion of silicon-based ceramics and composites

International Nuclear Information System (INIS)

Jacobson, N.S.; Fox, D.S.; Smialek, J.L.

1997-01-01

Silica scales exhibit slow growth rates and a low activation energy. Thus silica-protected materials are attractive high temperature structural materials for their potentially excellent oxidation resistance and well-documented high temperature strength. This review focuses on silicon carbide, silicon nitride, and composites of these materials. It is divided into four parts: (i) Fundamental oxidation mechanisms, (ii) Special properties of silica scales, (iii) Protective coatings, and (iv) Internal oxidation behavior of composites. While the fundamental oxidation mechanism of SiC is understood, there are still many questions regarding the oxidation mechanism of Si 3 N 4 . Silica scales exhibit many unique properties as compared to chromia and alumina. These include slower growth rates, SiO(g) formation, sensitivity to water vapor and impurities, and dissolution by basic molten salts. Protective coatings can limit the deleterious effects. The fourth area-internal oxidation of fibers and fiber coatings in composites-has limited the application of these novel materials. Strategies for understanding and limiting this internal oxidation are discussed. (orig.)

Improving bondability to RTV silicone elastomer using rf-activated gas

International Nuclear Information System (INIS)

Bellah, J.L.

1979-05-01

The effects of an rf-activated gas (plasma) on the bondability to RTV silicone elastomer were studied. Processing guidelines were developed, and a method was sought to satisfactorily bond RTV to the walls of a machined aluminum casting and to provide a surface on the RTV which would best accept bonding to an epoxy encapsulant. Processing parameters, such as gas type and flow rate, reaction chamber pressure, and rf power level, were developed

Ultrafast spectroscopy of model biological membranes

NARCIS (Netherlands)

Ghosh, Avishek

2009-01-01

In this PhD thesis, I have described the novel time-resolved sum-frequency generation (TR-SFG) spectroscopic technique that I developed during the course of my PhD research and used it study the ultrafast vibrational, structural and orientational dynamics of water molecules at model biological

Effect of ballistic electrons on ultrafast thermomechanical responses of a thin metal film

International Nuclear Information System (INIS)

Xiong Qi-lin; Tian Xin

2017-01-01

The ultrafast thermomechanical coupling problem in a thin gold film irradiated by ultrashort laser pulses with different electron ballistic depths is investigated via the ultrafast thermoelasticity model. The solution of the problem is obtained by solving finite element governing equations. The comparison between the results of ultrafast thermomechanical coupling responses with different electron ballistic depths is made to show the ballistic electron effect. It is found that the ballistic electrons have a significant influence on the ultrafast thermomechanical coupling behaviors of the gold thin film and the best laser micromachining results can be achieved by choosing the specific laser technology (large or small ballistic range). In addition, the influence of simplification of the ultrashort laser pulse source on the results is studied, and it is found that the simplification has a great influence on the thermomechanical responses, which implies that care should be taken when the simplified form of the laser source term is applied as the Gaussian heat source. (paper)

360° tunable microwave phase shifter based on silicon-on-insulator dual-microring resonator

DEFF Research Database (Denmark)

Pu, Minhao; Xue, Weiqi; Liu, Liu

2010-01-01

We demonstrate tunable microwave phase shifters based on electrically tunable silicon-on-insulator dual-microring resonators. A quasi-linear phase shift of 360° with ~2dB radio frequency power variation at a microwave frequency of 40GHz is obtained......We demonstrate tunable microwave phase shifters based on electrically tunable silicon-on-insulator dual-microring resonators. A quasi-linear phase shift of 360° with ~2dB radio frequency power variation at a microwave frequency of 40GHz is obtained...

Modeling and Simulation of - and Silicon Germanium-Base Bipolar Transistors Operating at a Wide Range of Temperatures.

Science.gov (United States)

Shaheed, M. Reaz

1995-01-01

Higher speed at lower cost and at low power consumption is a driving force for today's semiconductor technology. Despite a substantial effort toward achieving this goal via alternative technologies such as III-V compounds, silicon technology still dominates mainstream electronics. Progress in silicon technology will continue for some time with continual scaling of device geometry. However, there are foreseeable limits on achievable device performance, reliability and scaling for room temperature technologies. Thus, reduced temperature operation is commonly viewed as a means for continuing the progress towards higher performance. Although silicon CMOS will be the first candidate for low temperature applications, bipolar devices will be used in a hybrid fashion, as line drivers or in limited critical path elements. Silicon -germanium-base bipolar transistors look especially attractive for low-temperature bipolar applications. At low temperatures, various new physical phenomena become important in determining device behavior. Carrier freeze-out effects which are negligible at room temperature, become of crucial importance for analyzing the low temperature device characteristics. The conventional Pearson-Bardeen model of activation energy, used for calculation of carrier freeze-out, is based on an incomplete picture of the physics that takes place and hence, leads to inaccurate results at low temperatures. Plasma -induced bandgap narrowing becomes more pronounced in device characteristics at low temperatures. Even with modern numerical simulators, this effect is not well modeled or simulated. In this dissertation, improved models for such physical phenomena are presented. For accurate simulation of carrier freeze-out, the Pearson-Bardeen model has been extended to include the temperature dependence of the activation energy. The extraction of the model is based on the rigorous, first-principle theoretical calculations available in the literature. The new model is shown

Light Absorption Enhancement of Silicon-Based Photovoltaic Devices with Multiple Bandgap Structures of Porous Silicon

Directory of Open Access Journals (Sweden)

Kuen-Hsien Wu

2015-09-01

Full Text Available Porous-silicon (PS multi-layered structures with three stacked PS layers of different porosity were prepared on silicon (Si substrates by successively tuning the electrochemical-etching parameters in an anodization process. The three PS layers have different optical bandgap energy and construct a triple-layered PS (TLPS structure with multiple bandgap energy. Photovoltaic devices were fabricated by depositing aluminum electrodes of Schottky contacts on the surfaces of the developed TLPS structures. The TLPS-based devices exhibit broadband photoresponses within the spectrum of the solar irradiation and get high photocurrent for the incident light of a tungsten lamp. The improved spectral responses of devices are owing to the multi-bandgap structures of TLPS, which are designed with a layered configuration analog to a tandem cell for absorbing a wider energy range of the incidental sun light. The large photocurrent is mainly ascribed to an enhanced light-absorption ability as a result of applying nanoporous-Si thin films as the surface layers to absorb the short-wavelength light and to improve the Schottky contacts of devices. Experimental results reveal that the multi-bandgap PS structures produced from electrochemical-etching of Si wafers are potentially promising for development of highly efficient Si-based solar cells.

Fabrication of silicon based glass fibres for optical communication

Indian Academy of Sciences (India)

Silicon based glass fibres are fabricated by conventional fibre drawing process. First, preform fabrication is carried out by means of conventional MCVD technique by using various dopants such as SiCl4, GeCl4, POCl3, and FeCl3. The chemicals are used in such a way that step index single mode fibre can be drawn.

Annealing effects on magnetic properties of silicone-coated iron-based soft magnetic composites

Science.gov (United States)

Wu, Shen; Sun, Aizhi; Zhai, Fuqiang; Wang, Jin; Zhang, Qian; Xu, Wenhuan; Logan, Philip; Volinsky, Alex A.

2012-03-01

This paper focuses on novel iron-based soft magnetic composites synthesis utilizing high thermal stability silicone resin to coat iron powder. The effect of an annealing treatment on the magnetic properties of synthesized magnets was investigated. The coated silicone insulating layer was characterized by scanning electron microscopy and energy dispersive X-ray spectroscopy. Silicone uniformly coated the powder surface, resulting in a reduction of the imaginary part of the permeability, thereby increasing the electrical resistivity and the operating frequency of the synthesized magnets. The annealing treatment increased the initial permeability, the maximum permeability, and the magnetic induction, and decreased the coercivity. Annealing at 580 °C increased the maximum permeability by 72.5%. The result of annealing at 580 °C shows that the ferromagnetic resonance frequency increased from 2 kHz for conventional epoxy resin coated samples to 80 kHz for the silicone resin insulated composites.

Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation

Science.gov (United States)

Veirman, J.; Dubois, S.; Enjalbert, N.; Garandet, J. P.; Heslinga, D. R.; Lemiti, M.

2010-06-01

This letter focuses on the variation of the Hall majority carrier mobility with the dopant compensation level in purely Boron-doped Czochralski grown silicon single crystals. Compensation was varied continuously at the sample scale via a step by step activation of the oxygen-based thermal donors. At room temperature, we show a strong drop in mobility for high compensation levels in both p- and n-type Si. Mobility models taking into account carrier scattering on ionized impurities and phonons could not reproduce this drop. We conclude that a specific effect of compensation must be taken into account to explain the observed behaviour. We qualitatively discuss physical mechanisms susceptible to reduce mobility in highly compensated Si.

Compact temperature-insensitive modulator based on a silicon microring assistant Mach—Zehnder interferometer

International Nuclear Information System (INIS)

Zhang Xue-Jian; Feng Xue; Zhang Deng-Ke; Huang Yi-Dong

2012-01-01

On the silicon-on-insulator platform, an ultra compact temperature-insensitive modulator based on a cascaded microring assistant Mach—Zehnder interferometer is proposed and demonstrated with numerical simulation. According to the calculated results, the tolerated variation of ambient temperature can be as high as 134 °C while the footprint of such a silicon modulator is only 340 μm 2 . (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Hybrid heterojunction solar cell based on organic-inorganic silicon nanowire array architecture.

Science.gov (United States)

Shen, Xiaojuan; Sun, Baoquan; Liu, Dong; Lee, Shuit-Tong

2011-12-07

Silicon nanowire arrays (SiNWs) on a planar silicon wafer can be fabricated by a simple metal-assisted wet chemical etching method. They can offer an excellent light harvesting capability through light scattering and trapping. In this work, we demonstrated that the organic-inorganic solar cell based on hybrid composites of conjugated molecules and SiNWs on a planar substrate yielded an excellent power conversion efficiency (PCE) of 9.70%. The high efficiency was ascribed to two aspects: one was the improvement of the light absorption by SiNWs structure on the planar components; the other was the enhancement of charge extraction efficiency, resulting from the novel top contact by forming a thin organic layer shell around the individual silicon nanowire. On the contrary, the sole planar junction solar cell only exhibited a PCE of 6.01%, due to the lower light trapping capability and the less hole extraction efficiency. It indicated that both the SiNWs structure and the thin organic layer top contact were critical to achieve a high performance organic/silicon solar cell. © 2011 American Chemical Society

Cutting-Edge High-Power Ultrafast Thin Disk Oscillators

Directory of Open Access Journals (Sweden)

Thomas Südmeyer

2013-04-01

Full Text Available A growing number of applications in science and industry are currently pushing the development of ultrafast laser technologies that enable high average powers. SESAM modelocked thin disk lasers (TDLs currently achieve higher pulse energies and average powers than any other ultrafast oscillator technology, making them excellent candidates in this goal. Recently, 275 W of average power with a pulse duration of 583 fs were demonstrated, which represents the highest average power so far demonstrated from an ultrafast oscillator. In terms of pulse energy, TDLs reach more than 40 μJ pulses directly from the oscillator. In addition, another major milestone was recently achieved, with the demonstration of a TDL with nearly bandwidth-limited 96-fs long pulses. The progress achieved in terms of pulse duration of such sources enabled the first measurement of the carrier-envelope offset frequency of a modelocked TDL, which is the first key step towards full stabilization of such a source. We will present the key elements that enabled these latest results, as well as an outlook towards the next scaling steps in average power, pulse energy and pulse duration of such sources. These cutting-edge sources will enable exciting new applications, and open the door to further extending the current performance milestones.

Ultrafast photoinduced charge separation in metal-semiconductor nanohybrids.

Science.gov (United States)

Mongin, Denis; Shaviv, Ehud; Maioli, Paolo; Crut, Aurélien; Banin, Uri; Del Fatti, Natalia; Vallée, Fabrice

2012-08-28

Hybrid nano-objects formed by two or more disparate materials are among the most promising and versatile nanosystems. A key parameter in their properties is interaction between their components. In this context we have investigated ultrafast charge separation in semiconductor-metal nanohybrids using a model system of gold-tipped CdS nanorods in a matchstick architecture. Experiments are performed using an optical time-resolved pump-probe technique, exciting either the semiconductor or the metal component of the particles, and probing the light-induced change of their optical response. Electron-hole pairs photoexcited in the semiconductor part of the nanohybrids are shown to undergo rapid charge separation with the electron transferred to the metal part on a sub-20 fs time scale. This ultrafast gold charging leads to a transient red-shift and broadening of the metal surface plasmon resonance, in agreement with results for free clusters but in contrast to observation for static charging of gold nanoparticles in liquid environments. Quantitative comparison with a theoretical model is in excellent agreement with the experimental results, confirming photoexcitation of one electron-hole pair per nanohybrid followed by ultrafast charge separation. The results also point to the utilization of such metal-semiconductor nanohybrids in light-harvesting applications and in photocatalysis.

Advanced Instrumentation for Ultrafast Science at the LCLS

Energy Technology Data Exchange (ETDEWEB)

Berrah, Nora [Univ. of Connecticut, Storrs, CT (United States)

2015-10-13

This grant supported a Single Investigator and Small Group Research (SISGR) application to enable multi-user research in Ultrafast Science using the Linac Coherent Light Source (LCLS), the world’s first hard x-ray free electron laser (FEL) which lased for the first time at 1.5 Å on April 20, 2009. The goal of our proposal was to enable a New Era of Science by requesting funds to purchase and build Advanced Instrumentation for Ultrafast Science (AIUS), to utilize the intense, short x-ray pulses produced by the LCLS. The proposed instrumentation will allow peer review selected users to probe the ultrasmall and capture the ultrafast. These tools will expand on the investment already made in the construction of the light source and its instrumentation in both the LCLS and LUSI projects. The AIUS will provide researchers in the AMO, Chemical, Biological and Condensed Matter communities with greater flexibility in defining their scientific agenda at the LCLS. The proposed instrumentation will complement and significantly augment the present AMO instrument (funded through the LCLS project) through detectors and capabilities not included in the initial suite of instrumentation at the facility. We have built all of the instrumentations and they have been utilized by scientists. Please see report attached.

Feasibility of UltraFast Doppler in Post-operative Evaluation of Hepatic Artery in Recipients following Liver Transplantation.

Science.gov (United States)

Kim, Se-Young; Kim, Kyoung Won; Choi, Sang Hyun; Kwon, Jae Hyun; Song, Gi-Won; Kwon, Heon-Ju; Yun, Young Ju; Lee, Jeongjin; Lee, Sung-Gyu

2017-11-01

To determine the feasibility of using UltraFast Doppler in post-operative evaluation of the hepatic artery (HA) after liver transplantation (LT), we evaluated 283 simultaneous conventional and UltraFast Doppler sessions in 126 recipients over a 2-mo period after LT, using an Aixplorer scanner The Doppler indexes of the HA (peak systolic velocity [PSV], end-diastolic velocity [EDV], resistive index [RI] and systolic acceleration time [SAT]) by retrospective analysis of retrieved waves from UltraFast Doppler clips were compared with those obtained by conventional spectral Doppler. Correlation, performance in diagnosing the pathologic wave, examination time and reproducibility were evaluated. The PSV, EDV, RI and SAT of spectral and UltraFast Doppler measurements exhibited excellent correlation with favorable diagnostic performance. During the bedside examination, the mean time spent for UltraFast clip storing was significantly shorter than that for conventional Doppler US measurements. Both conventional and UltraFast Doppler exhibited good to excellent inter-analysis consistency. In conclusion, compared with conventional spectral Doppler, UltraFast Doppler values correlated excellently and yielded acceptable pathologic wave diagnostic performance with reduced examination time at the bedside and excellent reproducibility. Copyright © 2017 World Federation for Ultrasound in Medicine & Biology. Published by Elsevier Inc. All rights reserved.