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Sample records for type semiconductor gas

  1. Semiconductor type n for applications in gas sensing film

    International Nuclear Information System (INIS)

    Cerón Hurtado, Nathalie Marcela; Rodríguez Páez, Jorge Enrique

    2008-01-01

    Semiconductors are materials commonly used in the conformation of the active material in gas sensors, in this paper the synthesis routes are shown for obtaining raw material Sn02-Ti02 system, n-type semiconductor material, methods of characterization the same and the formation of thick films. The synthesis was performed using the methods of precipitation Controlled Polymeric Precursor, characterization of ceramic powders are made using techniques of differential thermal analysis and thermogravimetric (DTA / TG), X-ray diffraction (XRD), Transmission Electron Microscopy (TEM ) and Scanning Electron Microscopy (SEM); Finally they settled in thick films by screen printing method and microstructurally characterized by Optical Microscopy (M0) and Scanning Electron Microscopy (SEM), besides this electrically characterized. The ceramic powders obtained are nanoscale high chemical purity and respond favorably formed films in the presence of oxygen and carbon monoxide.

  2. Electrodes for Semiconductor Gas Sensors

    Science.gov (United States)

    Lee, Sung Pil

    2017-01-01

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

  3. Various types of semiconductor photocatalysts modified by CdTe QDs and Pt NPs for toluene photooxidation in the gas phase under visible light

    Energy Technology Data Exchange (ETDEWEB)

    Marchelek, M. [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland); Grabowska, E., E-mail: ewelina.grabowska@ug.edu.pl [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland); Klimczuk, T. [Department of Solid State Physics, Faculty of Applied Physics and Mathematics, Gdansk University of Technology, G. Narutowicza 11/12, 80-233 Gdansk (Poland); Lisowski, W. [Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44-52, 01-224 Warsaw (Poland); Zaleska-Medynska, A. [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland)

    2017-01-30

    Highlights: • Novel semiconductors decorated by CdTe QDs and/or Pt NPs were synthesized. • Photodeposition and radiolysis is an effective method to obtaining Pt NPs. • CdTe decorated samples were prepared by absorption of QDs on matrix surface. • KTaO{sub 3}/CdTe-Pt{sub (R)} showed highest photocatalytic performance. • The enhanced performance was associated with electron trap mechanism. - Abstract: A novel synthesis process was used to prepare TiO{sub 2} microspheres, TiO{sub 2} P-25, SrTiO{sub 3} and KTaO{sub 3} decorated by CdTe QDs and/or Pt NPs. The effect of semiconductor matrix, presence of CdTe QDs and/or Pt NPs on the semiconductor surface as well as deposition technique of Pt NPs (photodeposition or radiolysis) on the photocatalytic activity were investigated. The as-prepared samples were characterized by X-ray powder diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) with energy-dispersive X-ray (EDX) spectroscopy, scanning electron microscopy (SEM), photoluminescence spectrometry (PL), Fourier transform infrared (FT-IR) and Raman spectra, diffuse reflectance spectroscopy (DRS) and BET surface area analysis. The photocatalytic decomposition of toluene in gas phase, activated by light-emitting diodes (LEDs), with the CdTe/Pt nanoparticles-modified TiO{sub 2} microspheres, P25, SrTiO{sub 3} and KTaO{sub 3} semiconductors was investigated under UV–vis and visible irradiation.The results showed that the photoactivity depends on semiconductor matrix. The highest photoactivity under Vis light was observed for KTaO{sub 3}/CdTe-Pt{sub (R)} sample (56% of toluene was decompose after 30 min of irradiation). The efficiency of the most active sample was 3 times higher than result for P25 and two times higher than for unmodified KTaO{sub 3}.

  4. Method to induce a conductivity type in a semiconductor

    International Nuclear Information System (INIS)

    Aboaf, J.A.; Sedgwick, T.O.

    1977-01-01

    The invention deals with a method in which one can produce a region of a desired type of conductivity in a semiconductor as is required for, e.g., field effect transistors. A metal oxide layer combination consisting of several metal oxides is thus deposited on the semiconductor. This is carried out according to the invention in a non-oxidizing atmosphere at temperatures at which the metal oxides do not diffuse into the semiconductor. The sign and degree of the induced conductivity type is adjusted by dosed depositing of the individual metal oxides related to one another. The gaseous metal oxides due to heating, mixed with a non-oxidizing gas are added in compounds to the semiconductor heated to depositing temperature. These compounds decompose at the depositing temperature into the metal oxide and a gaseous residual component. The semiconductor consists of silicon, and nitrogen is used as carrier gas; when depositing aluminium oxide, gaseous aluminium isopropoxide is added; when depositing silicon dioxide, gaseous tetra-ethyl orthosilicate. (ORU) [de

  5. Nanoscale Metal Oxide Semiconductors for Gas Sensing

    Science.gov (United States)

    Hunter, Gary W.; Evans, Laura; Xu, Jennifer C.; VanderWal, Randy L.; Berger, Gordon M.; Kulis, Michael J.

    2011-01-01

    A report describes the fabrication and testing of nanoscale metal oxide semiconductors (MOSs) for gas and chemical sensing. This document examines the relationship between processing approaches and resulting sensor behavior. This is a core question related to a range of applications of nanotechnology and a number of different synthesis methods are discussed: thermal evaporation- condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed, providing a processing overview to developers of nanotechnology- based systems. The results of a significant amount of testing and comparison are also described. A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. The TECsynthesized single-crystal nanowires offer uniform crystal surfaces, resistance to sintering, and their synthesis may be done apart from the substrate. The TECproduced nanowire response is very low, even at the operating temperature of 200 C. In contrast, the electrospun polycrystalline nanofiber response is high, suggesting that junction potentials are superior to a continuous surface depletion layer as a transduction mechanism for chemisorption. Using a catalyst deposited upon the surface in the form of nanoparticles yields dramatic gains in sensitivity for both nanostructured, one-dimensional forms. For the nanowire materials, the response magnitude and response rate uniformly increase with increasing operating temperature. Such changes are interpreted in terms of accelerated surface diffusional processes, yielding greater access to chemisorbed oxygen species and faster dissociative chemisorption, respectively. Regardless of operating temperature, sensitivity of the nanofibers is a factor of 10 to 100 greater than that of nanowires with the same catalyst for the same test condition. In summary, nanostructure appears critical to governing the reactivity, as measured by electrical

  6. Treatment of exhaust gas from the semiconductor manufacturing process. 3; Handotai seizo sochi kara no hai gas shori. 3

    Energy Technology Data Exchange (ETDEWEB)

    Fukunaga, A. [Ebara Research Co. Ltd., Kanagawa (Japan); Mori, Y.; Osato, M.; Tsujimura, M. [Ebara Corp., Tokyo (Japan)

    1995-10-20

    Demand has been building up for an individual dry type scrubber for treating exhaust gas from the semiconductor manufacturing process. Some factors for the wide acceptance of such a scrubber would be the capability for complete treatment, easy maintenance and safety features, etc. Practical gas analysis and optimum scrubbing techniques would have to be applied, as well as effective monitoring, alarm, and fail-safe techniques. The overall exhaust gas line, i.e. the line connecting the scrubber system and the upstream process, including that extending to pump system, has to be fully considered for enabling effective scrubbing performance. Such factors, which have until now not been given any priority, would have to be fully studied for the development of a practical, individual dry type scrubber. Cooperation on this matter from the semiconductor manufacturing industry would also be essential. 6 refs., 3 figs., 5 tabs.

  7. Electrodeposited and Sol-gel Precipitated p-type SrTi1-xFexO3-δ Semiconductors for Gas Sensing

    Directory of Open Access Journals (Sweden)

    Ralf Moos

    2007-09-01

    Full Text Available In the present contribution, three methods for the preparation of nanoscaledSrTi1-xFexO3-δ sensor films for hydrocarbon sensing were investigated. Besides screen-printed thick films based on sol-precipitated nanopowders, two novel synthesis methods,electrospinning and electrospraying, were tested successfully. All of these sensor devicesshowed improved sensor functionality in comparison to conventional microscaled thickfilms. In order to explain the impact of the enhanced surface-to-volume ratio on sensorproperties in a quantitative way, a mechanistic model was applied to micro- and nanoscaleddevices. In contrast to the conventional diffusion-reaction model that has been proposed forn-type semiconducting sensors, it contained novel approaches with respect to themicroscopic mechanism. With very few fit variables, the present model was found torepresent well sensor functionality of p-type conducting SrTi0.8Fe0.2O3-δ films. In additionto the temperature dependency of the sensor response, the effect of the specific surface areaon the sensor response was predicted.

  8. n-Type organic semiconductors in organic electronics.

    Science.gov (United States)

    Anthony, John E; Facchetti, Antonio; Heeney, Martin; Marder, Seth R; Zhan, Xiaowei

    2010-09-08

    Organic semiconductors have been the subject of intensive academic and commercial interest over the past two decades, and successful commercial devices incorporating them are slowly beginning to enter the market. Much of the focus has been on the development of hole transporting, or p-type, semiconductors that have seen a dramatic rise in performance over the last decade. Much less attention has been devoted to electron transporting, or so called n-type, materials, and in this paper we focus upon recent developments in several classes of n-type materials and the design guidelines used to develop them.

  9. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  10. Semiconductor neutron detectors based on new types of materials

    International Nuclear Information System (INIS)

    Pochet, T.; Foulon, F.

    1993-01-01

    Neutron detection in hostile environments such as nuclear reactors has been performed using a new kind of semiconductor detector. So far, crystalline semiconductor detectors are not used in nuclear reactor instrumentation because of their sensitivity to radiation damage. For doses in excess of a few tens of kilo rads, radiation induced lattice defects produce a strong loss in the standard semiconductor detector performances. In the last few years, new semiconductor materials having amorphous or polycrystalline structures such as silicon, silicon carbide or CVD diamond, became available. These semiconductors, produced by Chemical Vapor Deposition, come in the form of thin layers being typically a few tens of micron thick. Their crystalline structure is particularly resistant to radiation damage up to a few Mrads but prevent the material use in spectrometry measurements. Nevertheless, these detectors, working in a counting mode, are suitable for the detection of alpha particles produced by the neutron capture reaction with boron. Such thin film detectors have a very poor sensitivity to γ-ray background. Furthermore, they are easier and cheaper to implement than current neutron gas counters. Preliminary results obtained with diamond and amorphous silicon diodes exposed to α particles are presented. (authors). 7 figs., 3 tabs., 11 refs

  11. Hydrogen discharges operating at atmospheric pressure in a semiconductor gas discharge system

    Energy Technology Data Exchange (ETDEWEB)

    Aktas, K; Acar, S; Salamov, B G [Physics Department, Faculty of Arts and Sciences, Gazi University, 06500 Ankara (Turkey)

    2011-08-15

    Analyses of physical processes which initiate electrical breakdown and spatial stabilization of current and control it with a photosensitive cathode in a semiconductor gas discharge system (SGDS) are carried out in a wide pressure range up to atmospheric pressure p, interelectrode distance d and diameter D of the electrode areas of the semiconductor cathode. The study compares the breakdown and stability curves of the gas discharge in the planar SGDS where the discharge gap is filled with hydrogen and air in two cases. The impact of the ionizing component of the discharge plasma on the control of the stable operation of the planar SGDS is also investigated at atmospheric pressure. The loss of stability is primarily due to modification of the semiconductor-cathode properties on the interaction with low-energy hydrogen ions and the formation of a space charge of positive ions in the discharge gap which changes the discharge from Townsend to glow type. The experimental results show that the discharge current in H{sub 2} is more stable than in air. The breakdown voltages are measured for H{sub 2} and air with parallel-plane electrodes, for pressures between 28 and 760 Torr. The effective secondary electron emission (SEE) coefficient is then determined from the breakdown voltage results and compared with the experimental results. The influence of the SEE coefficient is stated in terms of the differences between the experimental breakdown law.

  12. Gas-phase synthesis of semiconductor nanocrystals and its applications

    Science.gov (United States)

    Mandal, Rajib

    Luminescent nanomaterials is a newly emerging field that provides challenges not only to fundamental research but also to innovative technology in several areas such as electronics, photonics, nanotechnology, display, lighting, biomedical engineering and environmental control. These nanomaterials come in various forms, shapes and comprises of semiconductors, metals, oxides, and inorganic and organic polymers. Most importantly, these luminescent nanomaterials can have different properties owing to their size as compared to their bulk counterparts. Here we describe the use of plasmas in synthesis, modification, and deposition of semiconductor nanomaterials for luminescence applications. Nanocrystalline silicon is widely known as an efficient and tunable optical emitter and is attracting great interest for applications in several areas. To date, however, luminescent silicon nanocrystals (NCs) have been used exclusively in traditional rigid devices. For the field to advance towards new and versatile applications for nanocrystal-based devices, there is a need to investigate whether these NCs can be used in flexible and stretchable devices. We show how the optical and structural/morphological properties of plasma-synthesized silicon nanocrystals (Si NCs) change when they are deposited on stretchable substrates made of polydimethylsiloxane (PDMS). Synthesis of these NCs was performed in a nonthermal, low-pressure gas phase plasma reactor. To our knowledge, this is the first demonstration of direct deposition of NCs onto stretchable substrates. Additionally, in order to prevent oxidation and enhance the luminescence properties, a silicon nitride shell was grown around Si NCs. We have demonstrated surface nitridation of Si NCs in a single step process using non?thermal plasma in several schemes including a novel dual-plasma synthesis/shell growth process. These coated NCs exhibit SiNx shells with composition depending on process parameters. While measurements including

  13. P-type Oxide Semiconductors for Transparent & Energy Efficient Electronics

    KAUST Repository

    Wang, Zhenwei

    2018-03-11

    Emerging transparent semiconducting oxide (TSO) materials have achieved their initial commercial success in the display industry. Due to the advanced electrical performance, TSOs have been adopted either to improve the performance of traditional displays or to demonstrate the novel transparent and flexible displays. However, due to the lack of feasible p-type TSOs, the applications of TSOs is limited to unipolar (n-type TSOs) based devices. Compared with the prosperous n-type TSOs, the performance of p-type counterparts is lag behind. However, after years of discovery, several p-type TSOs are confirmed with promising performance, for example, tin monoxide (SnO). By using p-type SnO, excellent transistor field-effect mobility of 6.7 cm2 V-1 s-1 has been achieved. Motivated by this encouraging performance, this dissertation is devoted to further evaluate the feasibility of integrating p-type SnO in p-n junctions and complementary metal oxide semiconductor (CMOS) devices. CMOS inverters are fabricated using p-type SnO and in-situ formed n-type tin dioxide (SnO2). The semiconductors are simultaneously sputtered, which simplifies the process of CMOS inverters. The in-situ formation of SnO2 phase is achieved by selectively sputtering additional capping layer, which serves as oxygen source and helps to balance the process temperature for both types of semiconductors. Oxides based p-n junctions are demonstrated between p-type SnO and n-type SnO2 by magnetron sputtering method. Diode operating ideality factor of 3.4 and rectification ratio of 103 are achieved. A large temperature induced knee voltage shift of 20 mV oC-1 is observed, and explained by the large band gap and shallow states in SnO, which allows minor adjustment of band structure in response to the temperature change. Finally, p-type SnO is used to demonstrating the hybrid van der Waals heterojunctions (vdWHs) with two-dimensional molybdenum disulfide (2D MoS2) by mechanical exfoliation. The hybrid vdWHs show

  14. Inhomogeneous Oxygen Vacancy Distribution in Semiconductor Gas Sensors: Formation, Migration and Determination on Gas Sensing Characteristics

    Directory of Open Access Journals (Sweden)

    Jianqiao Liu

    2017-08-01

    Full Text Available The density of oxygen vacancies in semiconductor gas sensors was often assumed to be identical throughout the grain in the numerical discussion of the gas-sensing mechanism of the devices. In contrast, the actual devices had grains with inhomogeneous distribution of oxygen vacancy under non-ideal conditions. This conflict between reality and discussion drove us to study the formation and migration of the oxygen defects in semiconductor grains. A model of the gradient-distributed oxygen vacancy was proposed based on the effects of cooling rate and re-annealing on semiconductive thin films. The model established the diffusion equations of oxygen vacancy according to the defect kinetics of diffusion and exclusion. We described that the steady-state and transient-state oxygen vacancy distributions, which were used to calculate the gas-sensing characteristics of the sensor resistance and response to reducing gases under two different conditions. The gradient-distributed oxygen vacancy model had the applications in simulating the sensor performances, such as the power law, the grain size effect and the effect of depletion layer width.

  15. Inhomogeneous Oxygen Vacancy Distribution in Semiconductor Gas Sensors: Formation, Migration and Determination on Gas Sensing Characteristics.

    Science.gov (United States)

    Liu, Jianqiao; Gao, Yinglin; Wu, Xu; Jin, Guohua; Zhai, Zhaoxia; Liu, Huan

    2017-08-10

    The density of oxygen vacancies in semiconductor gas sensors was often assumed to be identical throughout the grain in the numerical discussion of the gas-sensing mechanism of the devices. In contrast, the actual devices had grains with inhomogeneous distribution of oxygen vacancy under non-ideal conditions. This conflict between reality and discussion drove us to study the formation and migration of the oxygen defects in semiconductor grains. A model of the gradient-distributed oxygen vacancy was proposed based on the effects of cooling rate and re-annealing on semiconductive thin films. The model established the diffusion equations of oxygen vacancy according to the defect kinetics of diffusion and exclusion. We described that the steady-state and transient-state oxygen vacancy distributions, which were used to calculate the gas-sensing characteristics of the sensor resistance and response to reducing gases under two different conditions. The gradient-distributed oxygen vacancy model had the applications in simulating the sensor performances, such as the power law, the grain size effect and the effect of depletion layer width.

  16. Hartman effect in a Kane-type semiconductor quantum ring

    International Nuclear Information System (INIS)

    Cakmaktepe, S

    2007-01-01

    The Hartman effect for a tunnelling particle implies that group delay time is independent of the opaque barrier width. In the present study, the tunnelling delay time in the transmission mode is studied taking into account the real band structure of an InSb-type semiconductor quantum ring and compared with that of a parabolic band structure. The system considered in this study consists of a circular loop in the presence of Aharonov-Bohm flux. It is shown that while tunnelling through an opaque barrier, the group delay time for a given incident energy becomes independent of the barrier thickness as well as the magnitude of the flux

  17. Excitonic optical bistability in n-type doped semiconductors

    International Nuclear Information System (INIS)

    Nguyen Ba An; Le Thi Cat Tuong

    1991-07-01

    A resonant monochromatic pump laser generates coherent excitons in an n-type doped semiconductor. Both exciton-exciton and exciton-donor interactions come into play. The former interaction can give rise to the appearance of optical bistability which is heavily influenced by the latter one. When optical bistability occurs at a fixed laser frequency both its holding intensity and hysteresis loop size are shown to decrease with increasing donor concentration. Two possibilities are suggested for experimentally determining one of the two parameters of the system - the exciton-donor coupling constant and the donor concentration, if the other parameter is known beforehand. (author). 36 refs, 2 figs

  18. Current instabilities under HF electron gas heating in semiconductors with negative differential conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Gurevich, Yu. G.; Logvinov, G. N. [Instituto Politecnico Nacional, Mexico, D.F. (Mexico); Laricheva, N. [Datmouth College, New Hampshire (United States); Mashkevich, O. L. [Kharkov University, Kharkov (Ukraine)

    2001-10-01

    A nonlinear temperature dependence of the kinetic coefficients of semiconductor plasma can result in the appearance of regions of negative differential conductivity (NDC) in both the high-frequency (HF) and static current-voltage characteristics (CVC). In the present paper the formation of the static NDC under simultaneous electron gas heating by HF and static electric field is studied. As is shown below, in this case the heating electromagnetic wave has a pronounced effect on the appearance of NDC caused by the overheating mechanisms and the type of the static CVC as a whole. [Spanish] Una dependencia no lineal de la temperatura de los coeficientes cineticos del plasma del semiconductor puede llevar a la aparicion de regiones con conductividad diferencial negativa (CDN) en las caracteristicas corriente voltaje (CCV) de alta frecuencia (AF) y estatica. En este articulo se estudia la formacion de la CDN estatica bajo la accion simultanea del calentamiento del gas de electrones por AF y el campo electrico estatico. Como se muestra mas adelante, en este caso la onda electromagnetica que calienta a los electrones ejerce un fuerte efecto en la aparicion de la CDN; que se obtiene por mecanismos de sobrecalentamiento, y en el tipo de CCV estatica.

  19. (Ga,Fe)Sb: A p-type ferromagnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Nguyen Thanh; Anh, Le Duc; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan)

    2014-09-29

    A p-type ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 3.9%–13.7%) has been grown by low-temperature molecular beam epitaxy (MBE) on GaAs(001) substrates. Reflection high energy electron diffraction patterns during the MBE growth and X-ray diffraction spectra indicate that (Ga,Fe)Sb layers have the zinc-blende crystal structure without any other crystallographic phase of precipitates. Magnetic circular dichroism (MCD) spectroscopy characterizations indicate that (Ga,Fe)Sb has the zinc-blende band structure with spin-splitting induced by s,p-d exchange interactions. The magnetic field dependence of the MCD intensity and anomalous Hall resistance of (Ga,Fe)Sb show clear hysteresis, demonstrating the presence of ferromagnetic order. The Curie temperature (T{sub C}) increases with increasing x and reaches 140 K at x = 13.7%. The crystal structure analyses, magneto-transport, and magneto-optical properties indicate that (Ga,Fe)Sb is an intrinsic ferromagnetic semiconductor.

  20. New semiconductor laser technology for gas sensing applications in the 1650nm range

    Science.gov (United States)

    Morrison, Gordon B.; Sherman, Jes; Estrella, Steven; Moreira, Renan L.; Leisher, Paul O.; Mashanovitch, Milan L.; Stephen, Mark; Numata, Kenji; Wu, Stewart; Riris, Haris

    2017-08-01

    Atmospheric methane (CH4) is the second most important anthropogenic greenhouse gas with approximately 25 times the radiative forcing of carbon dioxide (CO2) per molecule. CH4 also contributes to pollution in the lower atmosphere through chemical reactions leading to ozone production. Recent developments of LIDAR measurement technology for CH4 have been previously reported by Goddard Space Flight Center (GSFC). In this paper, we report on a novel, high-performance tunable semiconductor laser technology developed by Freedom Photonics for the 1650nm wavelength range operation, and for LIDAR detection of CH4. Devices described are monolithic, with simple control, and compatible with low-cost fabrication techniques. We present 3 different types of tunable lasers implemented for this application.

  1. Abatement of global warming gas emissions from semiconductor manufacturing processes by non-thermal plasma-catalyst systems

    Energy Technology Data Exchange (ETDEWEB)

    Chang, J-S.; Urashima, K. [McMaster Univ., McIARS and Dept. Eng. Phys., Hamilton, Ontario (Canada)

    2009-07-01

    Emission of various hazardous air pollutants (HAPs) and greenhouse gases including perfluoro-compounds (PFCs) from semiconductor industries may cause significant impact on human health and the global environment, has attracted much public attention. In this paper, an application of nonthermal plasma-adsorbent system for a removal of PFCs emission from semiconductor process flue gases is experimentally investigated. The non-thermal plasma reactor used is the ferro-electric packed-bed type barrier discharge plasma and adsorbent reactor used is Zeolite bed reactor. The results show that for a simulated semiconductor process flue gas with C{sub 2}F{sub 6} (2000ppm)/ CF{sub 4}(1000ppm)/ N{sub 2}O(1000ppm)/ N{sub 2}/ Air mixture, 54% of C{sub 2}F{sub 6} and 32% of CF{sub 4} were decomposed by the plasma reactor and 100% of C{sub 2}F{sub 6} and 98% of CF{sub 4} were removed by plasma reactor/Zeolite adsorbent hybrid system. For a simulated semiconductor process flue gas with NF{sub 3} (2000ppm)/ SiF{sub 4}(1000ppm)/ N{sub 2}O(200ppm)/ N{sub 2}/ Air mixture, 92% of NF{sub 3} and 32% of SiF{sub 4} were decomposed by the plasma reactor and total (100%) removal of the pollutant gases was achieved by plasma reactor/Zeolite adsorbent hybrid system. (author)

  2. Abatement of global warming gas emissions from semiconductor manufacturing processes by non-thermal plasma-catalyst systems

    International Nuclear Information System (INIS)

    Chang, J-S.; Urashima, K.

    2009-01-01

    Emission of various hazardous air pollutants (HAPs) and greenhouse gases including perfluoro-compounds (PFCs) from semiconductor industries may cause significant impact on human health and the global environment, has attracted much public attention. In this paper, an application of nonthermal plasma-adsorbent system for a removal of PFCs emission from semiconductor process flue gases is experimentally investigated. The non-thermal plasma reactor used is the ferro-electric packed-bed type barrier discharge plasma and adsorbent reactor used is Zeolite bed reactor. The results show that for a simulated semiconductor process flue gas with C 2 F 6 (2000ppm)/ CF 4 (1000ppm)/ N 2 O(1000ppm)/ N 2 / Air mixture, 54% of C 2 F 6 and 32% of CF 4 were decomposed by the plasma reactor and 100% of C 2 F 6 and 98% of CF 4 were removed by plasma reactor/Zeolite adsorbent hybrid system. For a simulated semiconductor process flue gas with NF 3 (2000ppm)/ SiF 4 (1000ppm)/ N 2 O(200ppm)/ N 2 / Air mixture, 92% of NF 3 and 32% of SiF 4 were decomposed by the plasma reactor and total (100%) removal of the pollutant gases was achieved by plasma reactor/Zeolite adsorbent hybrid system. (author)

  3. Gas-Solid Reaction Properties of Fluorine Compounds and Solid Adsorbents for Off-Gas Treatment from Semiconductor Facility

    Directory of Open Access Journals (Sweden)

    Shinji Yasui

    2012-01-01

    Full Text Available We have been developing a new dry-type off-gas treatment system for recycling fluorine from perfluoro compounds present in off-gases from the semiconductor industry. The feature of this system is to adsorb the fluorine compounds in the exhaust gases from the decomposition furnace by using two types of solid adsorbents: the calcium carbonate in the upper layer adsorbs HF and converts it to CaF2, and the sodium bicarbonate in the lower layer adsorbs HF and SiF4 and converts them to Na2SiF6. This paper describes the fluorine compound adsorption properties of both the solid adsorbents—calcium carbonate and the sodium compound—for the optimal design of the fixation furnace. An analysis of the gas-solid reaction rate was performed from the experimental results of the breakthrough curve by using a fixed-bed reaction model, and the reaction rate constants and adsorption capacity were obtained for achieving an optimal process design.

  4. Structural trends in off stoichiometric chalcopyrite type compound semiconductors

    International Nuclear Information System (INIS)

    Stephan, Christiane

    2011-01-01

    Energy supply is one of the most controversial topics that are currently discussed in our global community. Most of the energy delivered to the customer today has its origin in fossil and nuclear power plants. Indefinable risks and the radioactive waste repository problem of the latter as well as the global scarcity of fossil resources cause the renewable energies to grow more and more important for achieving sustainability. The main renewable energy sources are wind power, hydroelectric power and solar energy. On the photovoltaic (PV) market different materials are competing as part of different kinds of technologies, with the largest contribution still coming from wafer based crystalline silicon solar cells (95 %). Until now thin film solar cells only contribute a small portion to the whole PV market, but large capacities are under construction. Thin film photovoltaic shows a number of advantages in comparison to wafer based crystalline silicon PV. Among these material usage and production cost reduction are two prominent examples. The type of PV materials, which are analyzed in this work, are high potential compounds that are widely used as absorber layer in thin film solar cells. These are compound semiconductors of the type CuB III C VI 2 (B III = In, Ga and C VI = Se, S). Several years of research have already gone into understanding the efficiency limiting factors for solar cell devices fabricated from this compound. Most of the studies concerning electronic defects are done by spectroscopic methods mostly performed using thin films from different kinds of synthesis, without any real knowledge regarding the structural origin of these defects. This work shows a systematic fundamental structural study of intrinsic point defects that are present within the material at various compositions in CuB III C VI 2 compound semiconductors. The study is done on reference powder samples with well determined chemical composition and using advanced diffraction techniques

  5. Estimation of the limit of detection in semiconductor gas sensors through linearized calibration models.

    Science.gov (United States)

    Burgués, Javier; Jiménez-Soto, Juan Manuel; Marco, Santiago

    2018-07-12

    The limit of detection (LOD) is a key figure of merit in chemical sensing. However, the estimation of this figure of merit is hindered by the non-linear calibration curve characteristic of semiconductor gas sensor technologies such as, metal oxide (MOX), gasFETs or thermoelectric sensors. Additionally, chemical sensors suffer from cross-sensitivities and temporal stability problems. The application of the International Union of Pure and Applied Chemistry (IUPAC) recommendations for univariate LOD estimation in non-linear semiconductor gas sensors is not straightforward due to the strong statistical requirements of the IUPAC methodology (linearity, homoscedasticity, normality). Here, we propose a methodological approach to LOD estimation through linearized calibration models. As an example, the methodology is applied to the detection of low concentrations of carbon monoxide using MOX gas sensors in a scenario where the main source of error is the presence of uncontrolled levels of humidity. Copyright © 2018 Elsevier B.V. All rights reserved.

  6. Positron diffusion in zinc-blende-type semiconductors

    International Nuclear Information System (INIS)

    Singh, R.P.; Singh, M.

    1992-01-01

    A theory of positron diffusion in the presence of positron scattering with acoustic, piezoelectric-acoustic, and optical phonons in zinc-blende-type semiconductors is developed. The velocity-velocity correlation function is used to calculate the diffusion coefficient and the Green's function is used to calculate the correlation function. In this formulation the relaxation time automatically appears through the imaginary part of the self-energy. The effect of screening is included within the Thomas-Fermi approximation. The theory is used to calculate the energy relaxation time and diffusion length of positrons in GaAs. It is shown that the transverse and longitudinal phonons contribute almost the same amount towards the relaxation time in the piezoelectric-acoustic-phonon scattering of positrons. It is also found that the contribution of piezoelectric-acoustic-phonon scattering is about 10% to that of acoustic-phonon scattering at low temperatures. We obtained a fairly good agreement between our theory and experimental results available to us. It is found that optical-phonon scattering plays an important role in getting good agreement between theory and experiment at high temperatures

  7. Ambipolar organic heterojunction transistors with various p-type semiconductors

    International Nuclear Information System (INIS)

    Shi Jianwu; Wang Haibo; Song De; Tian Hongkun; Geng Yanhou; Yan Donghang

    2008-01-01

    Ambipolar transport has been realized in organic heterojunction transistors with metal phthalocyanines, phenanthrene-based conjugated oligomers as the first semiconductors and copper-hexadecafluoro-phthalocyanine as the second semiconductor. The electron and hole mobilities of ambipolar devices with rod-like molecules were comparable to the corresponding single component devices, while the carrier mobility of ambipolar devices with disk-like molecules was much lower than the corresponding single component devices. The much difference of their device performance was attributed to the roughness of the first semiconductor films, which was original from their distinct growth habits. The flat and continuous films for the first semiconductors layer can lead to a smooth heterojunction interface, and obtained a high device performance for ambipolar organic heterojunction transistors

  8. Structural trends in off stoichiometric chalcopyrite type compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Stephan, Christiane

    2011-03-15

    Energy supply is one of the most controversial topics that are currently discussed in our global community. Most of the energy delivered to the customer today has its origin in fossil and nuclear power plants. Indefinable risks and the radioactive waste repository problem of the latter as well as the global scarcity of fossil resources cause the renewable energies to grow more and more important for achieving sustainability. The main renewable energy sources are wind power, hydroelectric power and solar energy. On the photovoltaic (PV) market different materials are competing as part of different kinds of technologies, with the largest contribution still coming from wafer based crystalline silicon solar cells (95 %). Until now thin film solar cells only contribute a small portion to the whole PV market, but large capacities are under construction. Thin film photovoltaic shows a number of advantages in comparison to wafer based crystalline silicon PV. Among these material usage and production cost reduction are two prominent examples. The type of PV materials, which are analyzed in this work, are high potential compounds that are widely used as absorber layer in thin film solar cells. These are compound semiconductors of the type CuB{sup III}C{sup VI}{sub 2} (B{sup III} = In, Ga and C{sup VI} = Se, S). Several years of research have already gone into understanding the efficiency limiting factors for solar cell devices fabricated from this compound. Most of the studies concerning electronic defects are done by spectroscopic methods mostly performed using thin films from different kinds of synthesis, without any real knowledge regarding the structural origin of these defects. This work shows a systematic fundamental structural study of intrinsic point defects that are present within the material at various compositions in CuB{sup III}C{sup VI}{sub 2} compound semiconductors. The study is done on reference powder samples with well determined chemical composition and

  9. Methods for enhancing P-type doping in III-V semiconductor films

    Science.gov (United States)

    Liu, Feng; Stringfellow, Gerald; Zhu, Junyi

    2017-08-01

    Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

  10. Producing p-type conductivity in self-compensating semiconductor material

    International Nuclear Information System (INIS)

    Vechten, J.A. van; Woodall, J.M.

    1981-01-01

    This relates to compound type semiconductor materials that exhibit self-compensated n-type conductivity. The process described imparts p-type conductivity to a body of normally n-conductivity self-compensated compound semiconductor material by bombarding it with charged particles, either electrons, protons or ions. Other possible steps include introducing an acceptor impurity and applying a coating onto the crystal body. This technique will allow new semiconductor structures to be made. For example, there are some compound semiconductor materials that exhibit n-conductivity only that have energy gap widths that would permit electrical to light conversion at frequency and colours not readily achieved in semiconductor devices. (U.K.)

  11. P-type thin films transistors with solution-deposited lead sulfide films as semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo-Castillo, A.; Salas-Villasenor, A.; Mejia, I. [Department of Materials Science and Engineering, The University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Aguirre-Tostado, S. [Centro de Investigacion en Materiales Avanzados, S. C. Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica, Apodaca, Nuevo Leon, C.P. 666000 (Mexico); Gnade, B.E. [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Quevedo-Lopez, M.A., E-mail: mxq071000@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States)

    2012-01-31

    In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was {approx} 0.09 cm{sup 2} V{sup -1} s{sup -1} whereas the mobility for devices annealed at 150 Degree-Sign C/h in forming gas increased up to {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Besides the thermal annealing, the entire fabrications process was maintained below 100 Degree-Sign C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 Degree-Sign C anneal as well as a function of the PbS active layer thicknesses. - Highlights: Black-Right-Pointing-Pointer Thin film transistors with PbS as semiconductor deposited by chemical bath deposition. Black-Right-Pointing-Pointer Photolithography-based thin film transistors with PbS films at low temperatures. Black-Right-Pointing-Pointer Electron mobility for anneal-PbS devices of {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Black-Right-Pointing-Pointer Highest mobility reported in thin film transistors with PbS as the semiconductor.

  12. Peculiarities of charge transport in a semiconductor gas discharge electronic devices

    International Nuclear Information System (INIS)

    Koch, E.; Chivi, M.; Salamov, B.G.; Salamov, B.G.

    2009-01-01

    The memory effect in planar semiconductor gas discharge system at different pressures (15-760) and interelectrode distance (60-445 μm) were experimentally studied. The study was performed on the bases of current-voltage characteristic (CVC) measurements with the time lag of several hours of afterglow periods. The influence of the active space-charge remaining from previous discharge on the breakdown voltage has been analyzed using the CVC method for different conductivity of semiconductor GaAs photocathode. On the other hand, the CVC data for subsequent dates present a correlation of memory effect and hysteresis behaviour. The explanation of such relation is based on the influence of long-lived active charges on the electronic transport mechanism of semiconductor material

  13. Semiconductor inversion contact - a new heterogeneous structure with two-dimensional zero-mass electron gas

    International Nuclear Information System (INIS)

    Volkov, B.A.; Pankratov, O.A.

    1986-01-01

    Semiconductor inversion junction, presenting the contact of materials in which energy levels corresponding to band edges are mutually inverted. At that, the symmetry of wave function of conductivity band in one material coincides with the symmetry of valence band of the other and vice versa. Specificity of the inversion contact is determined by the presence of electron states independent of the transition band type, which are similar to soliton ones in one-dimensional systems. In the region of the junction the states are characterized by linear massless spectrum nondegenerate in spin. Energy spectrum of the inversion junction for semiconductors of the Pb 1-x Sn y Te x type is considered

  14. Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors

    Directory of Open Access Journals (Sweden)

    Konrad Maier

    2015-09-01

    Full Text Available In this work the low temperature response of metal oxide semiconductor gas sensors is analyzed. Important characteristics of this low-temperature response are a pronounced selectivity to acid- and base-forming gases and a large disparity of response and recovery time constants which often leads to an integrator-type of gas response. We show that this kind of sensor performance is related to the trend of semiconductor gas sensors to adsorb water vapor in multi-layer form and that this ability is sensitively influenced by the surface morphology. In particular we show that surface roughness in the nanometer range enhances desorption of water from multi-layer adsorbates, enabling them to respond more swiftly to changes in the ambient humidity. Further experiments reveal that reactive gases, such as NO2 and NH3, which are easily absorbed in the water adsorbate layers, are more easily exchanged across the liquid/air interface when the humidity in the ambient air is high.

  15. H+-type and OH−-type biological protonic semiconductors and complementary devices

    Science.gov (United States)

    Deng, Yingxin; Josberger, Erik; Jin, Jungho; Rousdari, Anita Fadavi; Helms, Brett A.; Zhong, Chao; Anantram, M. P.; Rolandi, Marco

    2013-01-01

    Proton conduction is essential in biological systems. Oxidative phosphorylation in mitochondria, proton pumping in bacteriorhodopsin, and uncoupling membrane potentials by the antibiotic Gramicidin are examples. In these systems, H+ hop along chains of hydrogen bonds between water molecules and hydrophilic residues – proton wires. These wires also support the transport of OH− as proton holes. Discriminating between H+ and OH− transport has been elusive. Here, H+ and OH− transport is achieved in polysaccharide- based proton wires and devices. A H+- OH− junction with rectifying behaviour and H+-type and OH−-type complementary field effect transistors are demonstrated. We describe these devices with a model that relates H+ and OH− to electron and hole transport in semiconductors. In turn, the model developed for these devices may provide additional insights into proton conduction in biological systems. PMID:24089083

  16. H+-type and OH- -type biological protonic semiconductors and complementary devices.

    Science.gov (United States)

    Deng, Yingxin; Josberger, Erik; Jin, Jungho; Roudsari, Anita Fadavi; Rousdari, Anita Fadavi; Helms, Brett A; Zhong, Chao; Anantram, M P; Rolandi, Marco

    2013-10-03

    Proton conduction is essential in biological systems. Oxidative phosphorylation in mitochondria, proton pumping in bacteriorhodopsin, and uncoupling membrane potentials by the antibiotic Gramicidin are examples. In these systems, H(+) hop along chains of hydrogen bonds between water molecules and hydrophilic residues - proton wires. These wires also support the transport of OH(-) as proton holes. Discriminating between H(+) and OH(-) transport has been elusive. Here, H(+) and OH(-) transport is achieved in polysaccharide- based proton wires and devices. A H(+)- OH(-) junction with rectifying behaviour and H(+)-type and OH(-)-type complementary field effect transistors are demonstrated. We describe these devices with a model that relates H(+) and OH(-) to electron and hole transport in semiconductors. In turn, the model developed for these devices may provide additional insights into proton conduction in biological systems.

  17. Direct analysis of ultra-trace semiconductor gas by inductively coupled plasma mass spectrometry coupled with gas to particle conversion-gas exchange technique.

    Science.gov (United States)

    Ohata, Masaki; Sakurai, Hiromu; Nishiguchi, Kohei; Utani, Keisuke; Günther, Detlef

    2015-09-03

    An inductively coupled plasma mass spectrometry (ICPMS) coupled with gas to particle conversion-gas exchange technique was applied to the direct analysis of ultra-trace semiconductor gas in ambient air. The ultra-trace semiconductor gases such as arsine (AsH3) and phosphine (PH3) were converted to particles by reaction with ozone (O3) and ammonia (NH3) gases within a gas to particle conversion device (GPD). The converted particles were directly introduced and measured by ICPMS through a gas exchange device (GED), which could penetrate the particles as well as exchange to Ar from either non-reacted gases such as an air or remaining gases of O3 and NH3. The particle size distribution of converted particles was measured by scanning mobility particle sizer (SMPS) and the results supported the elucidation of particle agglomeration between the particle converted from semiconductor gas and the particle of ammonium nitrate (NH4NO3) which was produced as major particle in GPD. Stable time-resolved signals from AsH3 and PH3 in air were obtained by GPD-GED-ICPMS with continuous gas introduction; however, the slightly larger fluctuation, which could be due to the ionization fluctuation of particles in ICP, was observed compared to that of metal carbonyl gas in Ar introduced directly into ICPMS. The linear regression lines were obtained and the limits of detection (LODs) of 1.5 pL L(-1) and 2.4 nL L(-1) for AsH3 and PH3, respectively, were estimated. Since these LODs revealed sufficiently lower values than the measurement concentrations required from semiconductor industry such as 0.5 nL L(-1) and 30 nL L(-1) for AsH3 and PH3, respectively, the GPD-GED-ICPMS could be useful for direct and high sensitive analysis of ultra-trace semiconductor gas in air. Copyright © 2015 Elsevier B.V. All rights reserved.

  18. Development of n-type polymer semiconductors for organic field-effect transistors

    International Nuclear Information System (INIS)

    Choi, Jongwan; Kim, Nakjoong; Song, Heeseok; Kim, Felix Sunjoo

    2015-01-01

    We review herein the development of unipolar n-type polymer semiconductors in organic field-effect transistors, which would enable large-scale deployment of printed electronics in combination with a fast-growing area of p-type counterparts. After discussing general features of electron transport in organic semiconductors, various π-conjugated polymers that are capable of transporting electrons are selected and summarized to outline the design principles for enhancing electron mobility and stability in air. The n-type polymer semiconductors with high electron mobility and good stability in air share common features of low-lying frontier molecular orbital energy levels achieved by design. In this review, materials are listed in roughly chronological order of the appearance of the key building blocks, such as various arylene diimides, or structural characteristics, including nitrile and fluorinated groups, in order to present the progress in the area of n-type polymers. (paper)

  19. Supplymentary type semiconductor device and manufacturing method. Soho gata handotai sochi oyobi sono seizo hoho

    Energy Technology Data Exchange (ETDEWEB)

    Uno, Masaaki

    1990-01-08

    As a supplementary type semiconductor device has a complicated structure, it is extremely difficult to construct it in a three dimensional structure. This invention aims to reduce its occupying area by forming p-channel and n-channel transistors in a solid structure; moreover in an easy method of production. In other words, an opening is made in the element-forming region of a semiconductor substrate, forming a gate-insulation film on each of the p-type and n-type semiconductors which are exposed on the two facing surfaces; on it formed a gate electrode; p-type semiconductor surface is used as a channel domain; a drain region of n-channel transistor on one surface and a source region on another surface; the n-type semiconductor surface corresponding to the gate electrode is used as a channel region; a source region of the n-channel transistor is formed on the same surface and the drain region on the substrate surface. Occupied area is thus made less and the production gets easier. 20 figs.

  20. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

    KAUST Repository

    Wang, Zhenwei

    2016-02-16

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

  1. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

    KAUST Repository

    Wang, Zhenwei; Nayak, Pradipta K.; Caraveo-Frescas, Jesus Alfonso; Alshareef, Husam N.

    2016-01-01

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

  2. Semiconductor device-based sensors for gas, chemical, and biomedical applications

    CERN Document Server

    Ren, Fan

    2011-01-01

    Sales of U.S. chemical sensors represent the largest segment of the multi-billion-dollar global sensor market, which includes instruments for chemical detection in gases and liquids, biosensors, and medical sensors. Although silicon-based devices have dominated the field, they are limited by their general inability to operate in harsh environments faced with factors such as high temperature and pressure. Exploring how and why these instruments have become a major player, Semiconductor Device-Based Sensors for Gas, Chemical, and Biomedical Applications presents the latest research, including or

  3. On-chip growth of semiconductor metal oxide nanowires for gas sensors: A review

    Directory of Open Access Journals (Sweden)

    Chu Manh Hung

    2017-09-01

    Full Text Available Semiconductor metal oxide nanowires (SMO-NWs show great potential for novel gas sensor applications because of their distinct properties, such as a high surface area to volume aspect ratio, high crystallinity and perfect pathway for electron transfer (length of NW. SMO-NW sensors can be configured as resistors or field-effect transistors for gas detection and different configurations, such as a single NW, multiple NWs, and networked NW films, have been established. Surface-functionalizing NWs with catalyst elements and self-heating NWs provide additional advantages for highly selective and low-power consumption gas sensors. However, an appropriate design of SMO-NWs is of practical importance in enhancing the gas-sensing performance of SMO-NW sensors. The on-chip growth of SMO-NWs possesses many advantages which can thus be effectively used for the large-scale fabrication of SMO-NW sensors with improved gas response and stability. This review aims to provide up-to-date information on the on-chip fabrication of SnO2, ZnO, WO3, CuO, and other SMO-NW sensors. It also discusses a variety of promising approaches that help advance the on-chip fabrication of SMO-NW-based gas sensors and other NW-based devices.

  4. P-type Oxide Semiconductors for Transparent & Energy Efficient Electronics

    KAUST Repository

    Wang, Zhenwei

    2018-01-01

    , the performance of p-type counterparts is lag behind. However, after years of discovery, several p-type TSOs are confirmed with promising performance, for example, tin monoxide (SnO). By using p-type SnO, excellent transistor field-effect mobility of 6.7 cm2 V-1 s

  5. Observed damage during Argon gas cluster depth profiles of compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Barlow, Anders J., E-mail: anders.barlow@ncl.ac.uk; Portoles, Jose F.; Cumpson, Peter J. [National EPSRC XPS Users' Service (NEXUS), School of Mechanical and Systems Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom)

    2014-08-07

    Argon Gas Cluster Ion Beam (GCIB) sources have become very popular in XPS and SIMS in recent years, due to the minimal chemical damage they introduce in the depth-profiling of polymer and other organic materials. These GCIB sources are therefore particularly useful for depth-profiling polymer and organic materials, but also (though more slowly) the surfaces of inorganic materials such as semiconductors, due to the lower roughness expected in cluster ion sputtering compared to that introduced by monatomic ions. We have examined experimentally a set of five compound semiconductors, cadmium telluride (CdTe), gallium arsenide (GaAs), gallium phosphide (GaP), indium arsenide (InAs), and zinc selenide (ZnSe) and a high-κ dielectric material, hafnium oxide (HfO), in their response to argon cluster profiling. An experimentally determined HfO etch rate of 0.025 nm/min (3.95 × 10{sup −2} amu/atom in ion) for 6 keV Ar gas clusters is used in the depth scale conversion for the profiles of the semiconductor materials. The assumption has been that, since the damage introduced into polymer materials is low, even though sputter yields are high, then there is little likelihood of damaging inorganic materials at all with cluster ions. This seems true in most cases; however, in this work, we report for the first time that this damage can in fact be very significant in the case of InAs, causing the formation of metallic indium that is readily visible even to the naked eye.

  6. Light absorption in disordered semiconductors with a random coulomb-type field

    International Nuclear Information System (INIS)

    Arbuzov, Yu.D.; Evdokimov, V.M.; Kolenkin, M.Yu.

    1988-01-01

    A method is proposed for the formulation of an asymptotic series for the light absorption coefficient in disordered semiconductors with a random field of the Coulomb type. It is shown that the series is obtained by expanding the exponent of an exponential function in powers of a parameter proportional to (E g - ℎω) -1/3 , where E g is the band gap of the semiconductor, and ℎω is the photon energy. The first three terms of the series are calculated in explicit form

  7. Collective excitations in semiconductor superlattices and plasma modes of a two-dimensional electron gas with spatially modulated charge density

    International Nuclear Information System (INIS)

    Eliasson, G.L.

    1987-01-01

    The theory of collective excitations in semiconductor superlattices is formulated by using linear response theory. Different kinds of collective excitations in type I (GaAs-GaAlAs) and type II (GaSb-InAs) superlattices are surveyed. Special attention is paid to the presence of surface and finite-size effects. In calculating the dielectric matrix, the effect of different approximations of the system is discussed. The theory for inelastic length scattering (Raman scattering), and for Electron Energy Loss (EEL) due to collective excitations, is formulated. Calculations for several model systems are presented and the main features of the spectra are discussed. In part II the theory of collective excitations of a two-dimensional electron gas with a spatially periodic equilibrium density is formulated. As a first example a periodic array of two-dimensional electron gas strips with constant equilibrium density is studied. The integral equation that describes the charge fluctuations on the strips is derived and solved numerically. The spatial dependence of the density fluctuation across a single strip can be in the form of either propagating or evanescent waves

  8. Optoelectronic properties of transparent p-type semiconductor Cu{sub x}S thin films

    Energy Technology Data Exchange (ETDEWEB)

    Parreira, P.; Valente, J. [ICEMS, IST-UTL, Lisboa (Portugal); Lavareda, G. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); Nunes, F.T. [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); Amaral, A. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); ICEMS, IST-UTL, Lisboa (Portugal); Carvalho, C.N. de [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); ICEMS, IST-UTL, Lisboa (Portugal)

    2010-07-15

    Nowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n-type conductivity. The fabrication of a transparent p-type semiconductor with good optoelectronic properties (comparable to those of n-type: InO{sub x}, ITO, ZnO{sub x} or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu{sub 2}S is a p-type narrow-band-gap material with an average optical transmittance of about 60% in the visible range for 50 nm thick films. However, due to its high conductivity at room temperature, 10 nm in thickness seems to be appropriate for device use. Cu{sub 2}S thin films with 10 nm in thickness have an optical visible transmittance of about 85% rendering them as very good candidates for transparent p-type semiconductors. In this work Cu{sub x}S thin films were deposited on alkali-free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p-type thin film transistor. In our Cu{sub x}S thin films, p-type high conductivity with a total visible transmittance of about 50% have been achieved. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  9. Development of Osaka gas type planar SOFC

    Energy Technology Data Exchange (ETDEWEB)

    Iha, M.; Shiratori, A.; Chikagawa, O. [Murata Mfg. Co., Ltd., Shiga (Japan)] [and others

    1996-12-31

    Osaka Gas Co. has been developing a planar type SOFC (OG type SOFC) which has a suitable structure for stacking. Murata Mfg. Co. has begun to develop the OG type SOFC stack through joint program since 1993. Figure 1 shows OG type cell structure. Because each cell is sustained by cell holders acting air manifold, the load of upper cell is not put on the lower cells. Single cell is composed of 3-layered membrane and LaCrO{sub 3} separator. 5 single cells are mounted on the cell holder, connected with Ni felt electrically, and bonded by glassy material sealant. We call the 5-cell stack a unit. Stacking 13 units, we succeeded 870 W generation in 1993. But the power density was low, 0.11 Wcm{sup -2} because of crack in the electrolyte and gas leakage at some cells.

  10. X-ray measurement with Pin type semiconductor detectors

    International Nuclear Information System (INIS)

    Ramirez J, F.J.

    1999-01-01

    Here are presented the experimental results of the applications of Pin type radiation detectors developed in a National Institute of Nuclear Research (ININ) project, in the measurement of low energy gamma and X-rays. The applications were oriented mainly toward the Medical Physics area. It is planned other applications which are in process of implementation inside the National Institute of Nuclear Research in Mexico. (Author)

  11. Evaluation of semiconductor gas sensor system for ethanol determination during fermentation processes

    Energy Technology Data Exchange (ETDEWEB)

    Picque, D; Corrieu, G

    1988-10-01

    Using commercial gas sensitive semi-conductors, an ethanol sensor has been constructed which operates by direct immersion in fermentation media. The calibration range of 0.1 to 10 or 13 % depending on the component. However, they are very often subjected to considerable drift (in the same case up to 10 %/h of the measured value). The electrical resistance of component may vary by a factor of 1 to 5 for a well-defined ethanol concentration. The effects of temperature changes in fermentation media are easily compensated. Other volatile compounds (methanol, ammonia,...) substantially affect component responses. Thus, all work on sensors requires careful calibration. Wine fermentation processes can be monitored satisfactorily, providing the sensor is recalibrated about every six hours.

  12. Intelligent Combustion. A gas boiler with a new control and safety device using the signals of a semiconductor-sensor

    International Nuclear Information System (INIS)

    Rusche, S.; Kostrzewa, G.

    1999-01-01

    The present controls of small gas boilers use an actual differential pressure of the flowing air to regulate the gas valve. It is also possible to combine the change of the gas flow rate and the air volume mechanically. In both of these methods, it is neglected that the air volume required for complete combustion is strongly affected by changing gas quality. The article discusses the use of a BaSnO3 semiconductor control sensor, which is heated by the flame and changes electrical resistance with temperature, O2 and CO content in the burning chamber. It also describes a new burner concept using the sensor

  13. Prediction and theoretical characterization of p-type organic semiconductor crystals for field-effect transistor applications.

    Science.gov (United States)

    Atahan-Evrenk, Sule; Aspuru-Guzik, Alán

    2014-01-01

    The theoretical prediction and characterization of the solid-state structure of organic semiconductors has tremendous potential for the discovery of new high performance materials. To date, the theoretical analysis mostly relied on the availability of crystal structures obtained through X-ray diffraction. However, the theoretical prediction of the crystal structures of organic semiconductor molecules remains a challenge. This review highlights some of the recent advances in the determination of structure-property relationships of the known organic semiconductor single-crystals and summarizes a few available studies on the prediction of the crystal structures of p-type organic semiconductors for transistor applications.

  14. Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors.

    Science.gov (United States)

    He, Tao; Wu, Yanfei; D'Avino, Gabriele; Schmidt, Elliot; Stolte, Matthias; Cornil, Jérôme; Beljonne, David; Ruden, P Paul; Würthner, Frank; Frisbie, C Daniel

    2018-05-30

    Understanding relationships between microstructure and electrical transport is an important goal for the materials science of organic semiconductors. Combining high-resolution surface potential mapping by scanning Kelvin probe microscopy (SKPM) with systematic field effect transport measurements, we show that step edges can trap electrons on the surfaces of single crystal organic semiconductors. n-type organic semiconductor crystals exhibiting positive step edge surface potentials display threshold voltages that increase and carrier mobilities that decrease with increasing step density, characteristic of trapping, whereas crystals that do not have positive step edge surface potentials do not have strongly step density dependent transport. A device model and microelectrostatics calculations suggest that trapping can be intrinsic to step edges for crystals of molecules with polar substituents. The results provide a unique example of a specific microstructure-charge trapping relationship and highlight the utility of surface potential imaging in combination with transport measurements as a productive strategy for uncovering microscopic structure-property relationships in organic semiconductors.

  15. Switching a gas detector types misromegas

    International Nuclear Information System (INIS)

    Hafsi, Marwa; Gannouni, Sonia

    2010-01-01

    Micromegas is a gas enclosure made up of two stages separated by a micro grille: the first volume of gas, 2 cm is limited by cathode and the micro grille, is the space of conversion or of drift where are creating the primary electron-ion pairs. The second volume, 100 μ m limited by the micro grille and the plan of conduction (anode), is the space of amplification which with the function to amplify the electrons by phenomenon d' avalanche. The function of this type of detector rests on various physical parameters which come into play: speed of drift of the electrons in gas, space and temporal resolution, attachment The simulations allow studying these parameters to optimize the operation of the detector by choosing a good compromise, in particular with regard to the composition of gas. Two simulation programs used to understand certain physical phenomena (configuration of the field electric in the detector, properties of transport of the electrons in gas) are Garfield and Magboltz.

  16. Efficient n-type doping of zinc-blende III-V semiconductor nanowires

    Science.gov (United States)

    Besteiro, Lucas V.; Tortajada, Luis; Souto, J.; Gallego, L. J.; Chelikowsky, James R.; Alemany, M. M. G.

    2014-03-01

    We demonstrate that it is preferable to dope III-V semiconductor nanowires by n-type anion substitution as opposed to cation substitution. Specifically, we show the dopability of zinc-blende nanowires is more efficient when the dopants are placed at the anion site as quantified by formation energies and the stabilization of DX-like defect centers. The comparison with previous work on n - type III-V semiconductor nanocrystals also allows to determine the role of dimensionality and quantum confinement on doping characteristics of materials. Our results are based on first-principles calculations of InP nanowires by using the PARSEC code. Work supported by the Spanish MICINN (FIS2012-33126) and Xunta de Galicia (GPC2013-043) in conjunction with FEDER. JRC acknowledges support from DoE (DE-FG02-06ER46286 and DESC0008877). Computational support was provided in part by CESGA.

  17. n/p-Type changeable semiconductor TiO{sub 2} prepared from NTA

    Energy Technology Data Exchange (ETDEWEB)

    Li Qiuye; Wang Xiaodong; Jin Zhensheng, E-mail: zhenshengjin@henu.edu.cn; Yang Dagang; Zhang Shunli; Guo Xinyong; Yang Jianjun; Zhang Zhijun [Henan University, Key Laboratory of Special Functional Materials (China)

    2007-10-15

    A novel kind of nano-sized TiO{sub 2} (anatase) was obtained by high-temperature (400-700 deg. C) dehydration of nanotube titanic acid (H{sub 2}Ti{sub 2}O{sub 4}(OH){sub 2}, NTA). The high-temperature (400-700 deg. C) dehydrated nanotube titanic acids (HD-NTAs) with a unique defect structure exhibited a p-type semiconductor behavior under visible-light irradiation ({lambda}{>=} 420nm, E{sub photon}=2.95 eV), whereas exhibited an n-type semiconductor behavior irradiated with UV light ({lambda}{>=} 365nm, E{sub photon}=3.40 eV)

  18. Theory of electroconductivity for anisotropic semiconductors of p-Te type

    International Nuclear Information System (INIS)

    Gorlej, P.N.; Tomchuk, P.M.; Shenderovskij, V.A.

    1975-01-01

    The temperature dependence of the electric conductivity tensor has been studied in anisotropic semiconductors of Te-type with the p-type conductivity. The inelastic scattering of carriers on the optical lattice vibrations and on impurity ions is taken into account. From a general equation for the mobility tensor obtained through the variation method rather simple temperature dependences of the mobility are found for various ultimate cases. In particular, a generalization is given of the Convell-Weizscopf equation for the case of anisotropic impurity scattering. In case of a mixed impurity and lattice mechanism of scattering the temperature dependence of the mobility is plotted as a diagram for the semiconductors of p-Te parameters

  19. Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

    Energy Technology Data Exchange (ETDEWEB)

    Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp; Muta, Tsubasa; Kobayashi, Mikinori; Saito, Toshiki; Shibata, Masanobu; Matsumura, Daisuke; Kudo, Takuya; Hiraiwa, Atsushi [Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kawarada, Hiroshi [Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

    2016-07-18

    The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al{sub 2}O{sub 3}. Using Al{sub 2}O{sub 3} as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulation by the gate and pinch off.

  20. Emergent properties resulting from type-II band alignment in semiconductor nanoheterostructures.

    Science.gov (United States)

    Lo, Shun S; Mirkovic, Tihana; Chuang, Chi-Hung; Burda, Clemens; Scholes, Gregory D

    2011-01-11

    The development of elegant synthetic methodologies for the preparation of monocomponent nanocrystalline particles has opened many possibilities for the preparation of heterostructured semiconductor nanostructures. Each of the integrated nanodomains is characterized by its individual physical properties, surface chemistry, and morphology, yet, these multicomponent hybrid particles present ideal systems for the investigation of the synergetic properties that arise from the material combination in a non-additive fashion. Of particular interest are type-II heterostructures, where the relative band alignment of their constituent semiconductor materials promotes a spatial separation of the electron and hole following photoexcitation, a highly desirable property for photovoltaic applications. This article highlights recent progress in both synthetic strategies, which allow for material and architectural modulation of novel nanoheterostructures, as well as the experimental work that provides insight into the photophysical properties of type-II heterostructures. The effects of external factors, such as electric fields, temperature, and solvent are explored in conjunction with exciton and multiexciton dynamics and charge transfer processes typical for type-II semiconductor heterostructures.

  1. Semiconductor Ceramic Mn0.5Fe1.5O3-Fe2O3 from Natural Minerals as Ethanol Gas Sensors

    Science.gov (United States)

    Aliah, H.; Syarif, D. G.; Iman, R. N.; Sawitri, A.; Sanjaya WS, M.; Nurul Subkhi, M.; Pitriana, P.

    2018-05-01

    In this research, Mn and Fe-based ceramic gas sensing were fabricated and characterized. This research used natural mineral which is widely available in Indonesia and intended to observe the characteristics of Mn and Fe-based semiconducting material. Fabricating process of the thick films started by synthesizing the ceramic powder of Fe(OH)3 and Mn oxide material using the precipitation method. The deposition from precipitation method previously was calcined at a temperature of 800 °C to produce nanoparticle powder. Nanoparticle powder that contains Mn and Fe oxide was mixed with an organic vehicle (OV) to produce a paste. Then, the paste was layered on the alumina substrate by using the screen printing method. XRD method was utilized to characterize the thick film crystal structure that has been produced. XRD spectra showed that the ceramic layer was formed from the solid Mn0.5Fe1.5O3 (bixbyite) and Fe2O3. In addition, the electrical properties (resistance) examination was held in the room that contains air and ethanol to determine the sensor sensitivity of ethanol gas. The sensor resistance decreases as the ethanol gas was added, showing that the sensor was sensitive to ethanol gas and an n-type semiconductor. Gas sensor exhibit sensitive characterization of ethanol gas on the concentration of (100 to 300) ppm at a temperature of (150 to 200) °C. This showed that the Mn0.5Fe1.5O3-Fe2O3 ceramic semiconductor could be utilized as the ethanol gas detector.

  2. Nanostructured p-Type Semiconductor Electrodes and Photoelectrochemistry of Their Reduction Processes

    Directory of Open Access Journals (Sweden)

    Matteo Bonomo

    2016-05-01

    Full Text Available This review reports the properties of p-type semiconductors with nanostructured features employed as photocathodes in photoelectrochemical cells (PECs. Light absorption is crucial for the activation of the reduction processes occurring at the p-type electrode either in the pristine or in a modified/sensitized state. Beside thermodynamics, the kinetics of the electron transfer (ET process from photocathode to a redox shuttle in the oxidized form are also crucial since the flow of electrons will take place correctly if the ET rate will overcome that one of recombination and trapping events which impede the charge separation produced by the absorption of light. Depending on the nature of the chromophore, i.e., if the semiconductor itself or the chemisorbed dye-sensitizer, different energy levels will be involved in the cathodic ET process. An analysis of the general properties and requirements of electrodic materials of p-type for being efficient photoelectrocatalysts of reduction processes in dye-sensitized solar cells (DSC will be given. The working principle of p-type DSCs will be described and extended to other p-type PECs conceived and developed for the conversion of the solar radiation into chemical products of energetic/chemical interest like non fossil fuels or derivatives of carbon dioxide.

  3. Reliability of semiconductor and gas-filled diodes for over-voltage protection exposed to ionizing radiation

    Directory of Open Access Journals (Sweden)

    Stanković Koviljka

    2009-01-01

    Full Text Available The wide-spread use of semiconductor and gas-filled diodes for non-linear over-voltage protection results in a variety of possible working conditions. It is therefore essential to have a thorough insight into their reliability in exploitation environments which imply exposure to ionizing radiation. The aim of this paper is to investigate the influence of irradiation on over-voltage diode characteristics by exposing the diodes to californium-252 combined neutron/gamma radiation field. The irradiation of semiconductor over-voltage diodes causes severe degradation of their protection characteristics. On the other hand, gas-filled over-voltage diodes exhibit a temporal improvement of performance. The results are presented with the accompanying theoretical interpretations of the observed changes in over-voltage diode behaviour, based on the interaction of radiation with materials constituting the diodes.

  4. Low Power Operation of Temperature-Modulated Metal Oxide Semiconductor Gas Sensors

    Directory of Open Access Journals (Sweden)

    Javier Burgués

    2018-01-01

    Full Text Available Mobile applications based on gas sensing present new opportunities for low-cost air quality monitoring, safety, and healthcare. Metal oxide semiconductor (MOX gas sensors represent the most prominent technology for integration into portable devices, such as smartphones and wearables. Traditionally, MOX sensors have been continuously powered to increase the stability of the sensing layer. However, continuous power is not feasible in many battery-operated applications due to power consumption limitations or the intended intermittent device operation. This work benchmarks two low-power, duty-cycling, and on-demand modes against the continuous power one. The duty-cycling mode periodically turns the sensors on and off and represents a trade-off between power consumption and stability. On-demand operation achieves the lowest power consumption by powering the sensors only while taking a measurement. Twelve thermally modulated SB-500-12 (FIS Inc. Jacksonville, FL, USA sensors were exposed to low concentrations of carbon monoxide (0–9 ppm with environmental conditions, such as ambient humidity (15–75% relative humidity and temperature (21–27 °C, varying within the indicated ranges. Partial Least Squares (PLS models were built using calibration data, and the prediction error in external validation samples was evaluated during the two weeks following calibration. We found that on-demand operation produced a deformation of the sensor conductance patterns, which led to an increase in the prediction error by almost a factor of 5 as compared to continuous operation (2.2 versus 0.45 ppm. Applying a 10% duty-cycling operation of 10-min periods reduced this prediction error to a factor of 2 (0.9 versus 0.45 ppm. The proposed duty-cycling powering scheme saved up to 90% energy as compared to the continuous operating mode. This low-power mode may be advantageous for applications that do not require continuous and periodic measurements, and which can tolerate

  5. Low Power Operation of Temperature-Modulated Metal Oxide Semiconductor Gas Sensors.

    Science.gov (United States)

    Burgués, Javier; Marco, Santiago

    2018-01-25

    Mobile applications based on gas sensing present new opportunities for low-cost air quality monitoring, safety, and healthcare. Metal oxide semiconductor (MOX) gas sensors represent the most prominent technology for integration into portable devices, such as smartphones and wearables. Traditionally, MOX sensors have been continuously powered to increase the stability of the sensing layer. However, continuous power is not feasible in many battery-operated applications due to power consumption limitations or the intended intermittent device operation. This work benchmarks two low-power, duty-cycling, and on-demand modes against the continuous power one. The duty-cycling mode periodically turns the sensors on and off and represents a trade-off between power consumption and stability. On-demand operation achieves the lowest power consumption by powering the sensors only while taking a measurement. Twelve thermally modulated SB-500-12 (FIS Inc. Jacksonville, FL, USA) sensors were exposed to low concentrations of carbon monoxide (0-9 ppm) with environmental conditions, such as ambient humidity (15-75% relative humidity) and temperature (21-27 °C), varying within the indicated ranges. Partial Least Squares (PLS) models were built using calibration data, and the prediction error in external validation samples was evaluated during the two weeks following calibration. We found that on-demand operation produced a deformation of the sensor conductance patterns, which led to an increase in the prediction error by almost a factor of 5 as compared to continuous operation (2.2 versus 0.45 ppm). Applying a 10% duty-cycling operation of 10-min periods reduced this prediction error to a factor of 2 (0.9 versus 0.45 ppm). The proposed duty-cycling powering scheme saved up to 90% energy as compared to the continuous operating mode. This low-power mode may be advantageous for applications that do not require continuous and periodic measurements, and which can tolerate slightly higher

  6. Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

    KAUST Repository

    Gan, Liyong; Cheng, Yingchun; Schwingenschlö gl, Udo; Zhang, Qingyun

    2013-01-01

    We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

  7. Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

    KAUST Repository

    Gan, Liyong

    2013-09-26

    We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

  8. High resolution optical spectroscopy of air-induced electrical instabilities in n-type polymer semiconductors.

    Science.gov (United States)

    Di Pietro, Riccardo; Sirringhaus, Henning

    2012-07-03

    We use high-resolution charge-accumulation optical spectroscopy to measure charge accumulation in the channel of an n-type organic field-effect transistor. We monitor the degradation of device performance in air, correlate the onset voltage shift with the reduction of charge accumulated in the polymer semiconductor, and explain the results in view of the redox reaction between the polymer, water and oxygen in the accumulation layer. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors

    KAUST Repository

    Caraveo-Frescas, J. A.

    2013-11-25

    p-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 °C. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm2 V−1 s−1) of any p-type oxide semiconductor processed at similar temperature. Compared to thin film transistors, the SnO nanowire transistors exhibit five times higher mobility and one order of magnitude lower subthreshold swing. The SnO nanowire transistors show three times lower threshold voltages (−1 V) than the best reported SnO thin film transistors and fifteen times smaller than p-type Cu 2O nanowire transistors. Gate dielectric and process temperature are critical to achieving such performance.

  10. A Density Functional Theory Study of Doped Tin Monoxide as a Transparent p-type Semiconductor

    KAUST Repository

    Bianchi Granato, Danilo

    2012-05-01

    In the pursuit of enhancing the electronic properties of transparent p-type semiconductors, this work uses density functional theory to study the effects of doping tin monoxide with nitrogen, antimony, yttrium and lanthanum. An overview of the theoretical concepts and a detailed description of the methods employed are given, including a discussion about the correction scheme for charged defects proposed by Freysoldt and others [Freysoldt 2009]. Analysis of the formation energies of the defects points out that nitrogen substitutes an oxygen atom and does not provide charge carriers. On the other hand, antimony, yttrium, and lanthanum substitute a tin atom and donate n-type carriers. Study of the band structure and density of states indicates that yttrium and lanthanum improves the hole mobility. Present results are in good agreement with available experimental works and help to improve the understanding on how to engineer transparent p-type materials with higher hole mobilities.

  11. Electronic properties of electron and hole in type-II semiconductor nano-heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Rahul, K. Suseel [Department of Physics, Central University of Kerala, Riverside Transit Campus, Kasaragod, Kerala. India (India); Department of Physics, Sri Vyasa NSS College, Wadakkancheri, Thrissur, Kerala, PIN:680623. India (India); Souparnika, C. [Department of Physics, Sri Vyasa NSS College, Wadakkancheri, Thrissur, Kerala, PIN:680623. India (India); Salini, K.; Mathew, Vincent, E-mail: vincent@cukerala.ac.in [Department of Physics, Central University of Kerala, Riverside Transit Campus, Kasaragod, Kerala. India (India)

    2016-05-06

    In this project, we record the orbitals of electron and hole in type-II (CdTe/CdSe/CdTe/CdSe) semiconductor nanocrystal using effective mass approximation. In type-II the band edges of both valance and conduction band are higher than that of shell. So the electron and hole get confined in different layers of the hetero-structure. The energy eigen values and eigen functions are calculated by solving Schrodinger equation using finite difference matrix method. Based on this we investigate the effect of shell thickness and well width on energy and probability distribution of ground state (1s) and few excited states (1p,1d,etc). Our results predict that, type-II quantum dots have significant importance in photovoltaic applications.

  12. Electronic properties of electron and hole in type-II semiconductor nano-heterostructures

    Science.gov (United States)

    Rahul, K. Suseel; Souparnika, C.; Salini, K.; Mathew, Vincent

    2016-05-01

    In this project, we record the orbitals of electron and hole in type-II (CdTe/CdSe/CdTe/CdSe) semiconductor nanocrystal using effective mass approximation. In type-II the band edges of both valance and conduction band are higher than that of shell. So the electron and hole get confined in different layers of the hetero-structure. The energy eigen values and eigen functions are calculated by solving Schrodinger equation using finite difference matrix method. Based on this we investigate the effect of shell thickness and well width on energy and probability distribution of ground state (1s) and few excited states (1p,1d,etc). Our results predict that, type-II quantum dots have significant importance in photovoltaic applications.

  13. Inorganic p-Type Semiconductors: Their Applications and Progress in Dye-Sensitized Solar Cells and Perovskite Solar Cells

    Directory of Open Access Journals (Sweden)

    Ming-Hsien Li

    2016-04-01

    Full Text Available Considering the increasing global demand for energy and the harmful ecological impact of conventional energy sources, it is obvious that development of clean and renewable energy is a necessity. Since the Sun is our only external energy source, harnessing its energy, which is clean, non-hazardous and infinite, satisfies the main objectives of all alternative energy strategies. With attractive features, i.e., good performance, low-cost potential, simple processibility, a wide range of applications from portable power generation to power-windows, photoelectrochemical solar cells like dye-sensitized solar cells (DSCs represent one of the promising methods for future large-scale power production directly from sunlight. While the sensitization of n-type semiconductors (n-SC has been intensively studied, the use of p-type semiconductor (p-SC, e.g., the sensitization of wide bandgap p-SC and hole transport materials with p-SC have also been attracting great attention. Recently, it has been proved that the p-type inorganic semiconductor as a charge selective material or a charge transport material in organometallic lead halide perovskite solar cells (PSCs shows a significant impact on solar cell performance. Therefore the study of p-type semiconductors is important to rationally design efficient DSCs and PSCs. In this review, recent published works on p-type DSCs and PSCs incorporated with an inorganic p-type semiconductor and our perspectives on this topic are discussed.

  14. Development of a high sensitivity pinhole type gamma camera using semiconductors for low dose rate fields

    Science.gov (United States)

    Ueno, Yuichiro; Takahashi, Isao; Ishitsu, Takafumi; Tadokoro, Takahiro; Okada, Koichi; Nagumo, Yasushi; Fujishima, Yasutake; Yoshida, Akira; Umegaki, Kikuo

    2018-06-01

    We developed a pinhole type gamma camera, using a compact detector module of a pixelated CdTe semiconductor, which has suitable sensitivity and quantitative accuracy for low dose rate fields. In order to improve the sensitivity of the pinhole type semiconductor gamma camera, we adopted three methods: a signal processing method to set the discriminating level lower, a high sensitivity pinhole collimator and a smoothing image filter that improves the efficiency of the source identification. We tested basic performances of the developed gamma camera and carefully examined effects of the three methods. From the sensitivity test, we found that the effective sensitivity was about 21 times higher than that of the gamma camera for high dose rate fields which we had previously developed. We confirmed that the gamma camera had sufficient sensitivity and high quantitative accuracy; for example, a weak hot spot (0.9 μSv/h) around a tree root could be detected within 45 min in a low dose rate field test, and errors of measured dose rates with point sources were less than 7% in a dose rate accuracy test.

  15. Photoacoustic Techniques for Trace Gas Sensing Based on Semiconductor Laser Sources

    Directory of Open Access Journals (Sweden)

    Vincenzo Spagnolo

    2009-12-01

    Full Text Available The paper provides an overview on the use of photoacoustic sensors based on semiconductor laser sources for the detection of trace gases. We review the results obtained using standard, differential and quartz enhanced photoacoustic techniques.

  16. Band Engineering Small Bandgap p-Type Semiconductors: Investigations of their Optical and Photoelectrochemical Properties

    Science.gov (United States)

    Zoellner, Brandon

    Mixed-metal oxides containing Mn(II), Cu(I), Ta(V), Nb(V), and V(V) were investigated for their structures and properties as new p-type semiconductors and in the potential applications involving the photocatalytic conversion of water into hydrogen and oxygen. Engineering of the bandgaps was achieved by combining metal cations that have halffilled (Mn 3d5) or filled (Cu 3d10) d-orbitals together with metal cations that have empty (V/Nb/Ta 3/4/5 d0) d-orbitals. The research described herein focuses on the synthesis, optical, electronic, and photocatalytic properties of the metal-oxide semiconductors MnV2O6, Cu3VO 4, CuNb1-xTaxO3, and Cu5(Ta1-xNbx)11O30. Powder X-ray diffraction was used to probe their phase purity as well as atomic-level crystallographic details, i.e. shifts of lattice parameters, chemical compositions, and changes in local bonding environments. Optical measurements revealed visible-light bandgap sizes of ˜1.17 eV (Cu3VO4), ˜1.45 eV (MnV2O6), ˜1.89-1.97 eV (CuNb1-xTa xO3), and ˜1.97-2.50 eV (Cu5(Ta1-xNb x)11O30). The latter two were found to systematically vary as a function of composition. Electrochemical impedance spectroscopy measurements of MnV2O6 and Cu3VO 4 provided the first experimental characterization of the energetic positions of the valence and conduction bands with respect to the water oxidation and reduction potentials, as well as confirmed the p-type nature of each semiconductor. The valence and conduction band energies were found to be suitable for driving either one or both of the water-splitting half reaction (i.e. 2H+ → H2 and 2H2O → O2 + 4H+). Photoelectrochemical measurements on polycrystalline films of the Cu(I)-based semiconductors under visible-light irradiation produced cathodic currents indicative of p-type semiconductor character and chemical reduction at their surfaces in the electrolyte solution. The stability of the photocurrents was increased by the addition of CuO oxide particles either externally deposited or

  17. Surface-segregated monolayers: a new type of ordered monolayer for surface modification of organic semiconductors.

    Science.gov (United States)

    Wei, Qingshuo; Tajima, Keisuke; Tong, Yujin; Ye, Shen; Hashimoto, Kazuhito

    2009-12-09

    We report a new type of ordered monolayer for the surface modification of organic semiconductors. Fullerene derivatives with fluorocarbon chains ([6,6]-phenyl-C(61)-buryric acid 1H,1H-perfluoro-1-alkyl ester or FC(n)) spontaneously segregated as a monolayer on the surface of a [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) film during a spin-coating process from the mixture solutions, as confirmed by X-ray photoelectron spectroscopy (XPS). Ultraviolet photoelectron spectroscopy (UPS) showed the shift of ionization potentials (IPs) depending on the fluorocarbon chain length, indicating the formation of surface dipole moments. Surface-sensitive vibrational spectroscopy, sum frequency generation (SFG) revealed the ordered molecular orientations of the C(60) moiety in the surface FC(n) layers. The intensity of the SFG signals from FC(n) on the surface showed a clear odd-even effect when the length of the fluorocarbon chain was changed. This new concept of the surface-segregated monolayer provides a facile and versatile approach to modifying the surface of organic semiconductors and is applicable to various organic optoelectronic devices.

  18. Thermodynamic analysis of Mg-doped p-type GaN semiconductor

    International Nuclear Information System (INIS)

    Li Jingbo; Liang Jingkui; Rao Guanghui; Zhang Yi; Liu Guangyao; Chen Jingran; Liu Quanlin; Zhang Weijing

    2006-01-01

    A thermodynamic modeling of Mg-doped p-type GaN was carried out to describe the thermodynamic behaviors of native defects, dopants (Mg and H) and carriers in GaN. The formation energies of charged component compounds in a four-sublattice model were defined as functions of the Fermi-level based on the results of the first-principles calculations and adjusted to fit experimental data. The effect of the solubility of Mg on the low doping efficiency of Mg in GaN and the role of H in the Mg-doping MOCVD process were discussed. The modeling provides a thermodynamic approach to understand the doping process of GaN semiconductors

  19. Method for depositing high-quality microcrystalline semiconductor materials

    Science.gov (United States)

    Guha, Subhendu [Bloomfield Hills, MI; Yang, Chi C [Troy, MI; Yan, Baojie [Rochester Hills, MI

    2011-03-08

    A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

  20. Deliberate and Accidental Gas-Phase Alkali Doping of Chalcogenide Semiconductors: Cu(In,Ga)Se2.

    Science.gov (United States)

    Colombara, Diego; Berner, Ulrich; Ciccioli, Andrea; Malaquias, João C; Bertram, Tobias; Crossay, Alexandre; Schöneich, Michael; Meadows, Helene J; Regesch, David; Delsante, Simona; Gigli, Guido; Valle, Nathalie; Guillot, Jérome; El Adib, Brahime; Grysan, Patrick; Dale, Phillip J

    2017-02-24

    Alkali metal doping is essential to achieve highly efficient energy conversion in Cu(In,Ga)Se 2 (CIGSe) solar cells. Doping is normally achieved through solid state reactions, but recent observations of gas-phase alkali transport in the kesterite sulfide (Cu 2 ZnSnS 4 ) system (re)open the way to a novel gas-phase doping strategy. However, the current understanding of gas-phase alkali transport is very limited. This work (i) shows that CIGSe device efficiency can be improved from 2% to 8% by gas-phase sodium incorporation alone, (ii) identifies the most likely routes for gas-phase alkali transport based on mass spectrometric studies, (iii) provides thermochemical computations to rationalize the observations and (iv) critically discusses the subject literature with the aim to better understand the chemical basis of the phenomenon. These results suggest that accidental alkali metal doping occurs all the time, that a controlled vapor pressure of alkali metal could be applied during growth to dope the semiconductor, and that it may have to be accounted for during the currently used solid state doping routes. It is concluded that alkali gas-phase transport occurs through a plurality of routes and cannot be attributed to one single source.

  1. A Customized Metal Oxide Semiconductor-Based Gas Sensor Array for Onion Quality Evaluation: System Development and Characterization

    Directory of Open Access Journals (Sweden)

    Tharun Konduru

    2015-01-01

    Full Text Available A gas sensor array, consisting of seven Metal Oxide Semiconductor (MOS sensors that are sensitive to a wide range of organic volatile compounds was developed to detect rotten onions during storage. These MOS sensors were enclosed in a specially designed Teflon chamber equipped with a gas delivery system to pump volatiles from the onion samples into the chamber. The electronic circuit mainly comprised a microcontroller, non-volatile memory chip, and trickle-charge real time clock chip, serial communication chip, and parallel LCD panel. User preferences are communicated with the on-board microcontroller through a graphical user interface developed using LabVIEW. The developed gas sensor array was characterized and the discrimination potential was tested by exposing it to three different concentrations of acetone (ketone, acetonitrile (nitrile, ethyl acetate (ester, and ethanol (alcohol. The gas sensor array could differentiate the four chemicals of same concentrations and different concentrations within the chemical with significant difference. Experiment results also showed that the system was able to discriminate two concentrations (196 and 1964 ppm of methlypropyl sulfide and two concentrations (145 and 1452 ppm of 2-nonanone, two key volatile compounds emitted by rotten onions. As a proof of concept, the gas sensor array was able to achieve 89% correct classification of sour skin infected onions. The customized low-cost gas sensor array could be a useful tool to detect onion postharvest diseases in storage.

  2. Numerical simulation research on gas migration with Y type ventilation

    Science.gov (United States)

    Gou, Yanan; Han, Xuezheng

    2018-01-01

    The ventilation way of the working face has a great influence to goaf flow field and gas migration, the existing U-shaped ventilation face wind serious overrun, Y type ventilation mode is put forward, and the mathematic control equation of the gas moving rule is established. Put the Gaozhuang coal mine west five mining area as the model, set up calculation model. And the gas concentration is simulated, the simulation results show that the Y type ventilation ways can intercept goaf gas into the corner on the working plane and return air lane, effectively avoid the work of top corner gas accumulation.

  3. Magnetism in the p-type Monolayer II-VI semiconductors SrS and SrSe

    Science.gov (United States)

    Lin, Heng-Fu; Lau, Woon-Ming; Zhao, Jijun

    2017-01-01

    Using density functional theory calculations, we study the electronic and magnetic properties of the p-type monolayer II-VI semiconductors SrX (X = S,Se). The pristine SrS and SrSe monolayers are large band gap semiconductor with a very flat band in the top valence band. Upon injecting hole uniformly, ferromagnetism emerges in those system in a large range of hole density. By varying hole density, the systems also show complicated phases transition among nonmagnetic semiconductor, half metal, magnetic semiconductor, and nonmagnetic metal. Furthermore, after introducing p-type dopants in SrS and SrSe via substitutionary inserting P (or As) dopants at the S (or Se) sites, local magnetic moments are formed around the substitutional sites. The local magnetic moments are stable with the ferromagnetic order with appreciable Curie temperature. The ferromagnetism originates from the instability of the electronic states in SrS and SrSe with the large density of states at the valence band edge, which demonstrates a useful strategy for realizing the ferromagnetism in the two dimensional semiconductors. PMID:28378761

  4. Efficient color-tunable multiexcitonic dual wavelength emission from Type II semiconductor tetrapods.

    Science.gov (United States)

    Wu, Wen-Ya; Li, Mingjie; Lian, Jie; Wu, Xiangyang; Yeow, Edwin K L; Jhon, Mark H; Chan, Yinthai

    2014-09-23

    We synthesized colloidal InP/ZnS seeded CdS tetrapods by harnessing the structural stability of the InP/ZnS seed nanocrystals at the high reaction temperatures needed to grow the CdS arms. Because of an unexpected Type II band alignment at the interface of the InP/ZnS core and CdS arms that enhanced the occurrence of radiative excitonic recombination in CdS, these tetrapods were found to be capable of exhibiting highly efficient multiexcitonic dual wavelength emission of equal intensity at spectrally distinct wavelengths of ∼485 and ∼675 nm. Additionally, the Type II InP/ZnS seeded CdS tetrapods displayed a wider range of pump-dependent emission color-tunability (from red to white to blue) within the context of a CIE 1931 chromaticity diagram and possessed higher photostability due to suppressed multiexcitonic Auger recombination when compared to conventional Type I CdSe seeded CdS tetrapods. By employing time-resolved spectroscopy measurements, we were able to attribute the wide emission color-tunability to the large valence band offset between InP and CdS. This work highlights the importance of band alignment in the synthetic design of semiconductor nanoheterostructures, which can exhibit color-tunable multiwavelength emission with high efficiency and photostability.

  5. "Liquid-liquid-solid"-type superoleophobic surfaces to pattern polymeric semiconductors towards high-quality organic field-effect transistors.

    Science.gov (United States)

    Wu, Yuchen; Su, Bin; Jiang, Lei; Heeger, Alan J

    2013-12-03

    Precisely aligned organic-liquid-soluble semiconductor microwire arrays have been fabricated by "liquid-liquid-solid" type superoleophobic surfaces directed fluid drying. Aligned organic 1D micro-architectures can be built as high-quality organic field-effect transistors with high mobilities of >10 cm(2) ·V(-1) ·s(-1) and current on/off ratio of more than 10(6) . All these studies will boost the development of 1D microstructures of organic semiconductor materials for potential application in organic electronics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Effects of electromagnetic shielding cases for semiconductor-type electronic personal dosimeters on preventing electromagnetic interference

    International Nuclear Information System (INIS)

    Deji, Shizuhiko; Ito, Shigeki; Nishizawa, Kunihide; Saze, Takuya; Mori, Kazuyuki

    2005-01-01

    Performance of electromagnetic shielding cases for preventing malfunction of semiconductor-type electronic personal dosimeters (SEPDs) caused by high frequency electromagnetic fields emitted from a digital cellular telephone (cell phone) and a card reader of access control system were analyzed. The cases were handcrafted by using cloth of activated carbon fiber, polyester film laminated metal, and two kinds of metal netting. Five kinds of SEPDs put in the cases were exposed to the high frequency electromagnetic fields for 50 sec or 1 min. The cases prevented perfectly the malfunction due to the cell phone. The cases shortened distances required to prevent the malfunction due to the card reader, but did not prevent the malfunction. The electromagnetic immunity level of SEPD inserted in the cases increased from greater than 11.2 to greater than 18.7 times for the cell phone and from 1.1 to greater than 4.3 times for the card reader. The maximum of electromagnetic shielding effectiveness of each case was greater than 18.7 times for the cell phone and greater than 4.3 times for the card reader. (author)

  7. Preparation of n-type semiconductor SnO2 thin films

    International Nuclear Information System (INIS)

    Rahal, Achour; Benramache, Said; Benhaoua, Boubaker

    2013-01-01

    We studied fluorine-doped tin oxide on a glass substrate at 350°C using an ultrasonic spray technique. Tin (II) chloride dehydrate, ammonium fluoride dehydrate, ethanol and NaOH were used as the starting material, dopant source, solvent and stabilizer, respectively. The SnO 2 : F thin films were deposited at 350°C and a pending time of 60 and 90 s. The as-grown films exhibit a hexagonal wurtzite structure and have (101) orientation. The G = 31.82 nm value of the grain size is attained from SnO 2 : F film grown at 90 s, and the transmittance is greater than 80% in the visible region. The optical gap energy is found to measure 4.05 eV for the film prepared at 90 s, and the increase in the electrical conductivity of the film with the temperature of the sample is up to a maximum value of 265.58 (Ω·cm) −1 , with the maximum activation energy value of the films being found to measure 22.85 meV, indicating that the films exhibit an n-type semiconducting nature. (semiconductor materials)

  8. A clinical implementation of in vivo dosimetry with n-type Isorad semiconductor diodes

    Directory of Open Access Journals (Sweden)

    Rutonjski Laza M.

    2014-01-01

    Full Text Available The study was aimed to check the radiotherapy treatment accuracy and definition of action levels during implementation of in vivo dosimetry as a part of quality assurance program. The calibration and correction factors for in vivo entrance dose measurements for six n-type Isorad semiconductor diodes were determined as recommended by the European Society for Radiotherapy and Oncology Booklet No. 5. The patients for in vivo measurements have been divided in groups, according to the treatment site/techique, in order to investigate and detect the groups where the uncertainty was larger or where a systematic error occurred. The tolerance/action levels for all groups were also defined and checked. In this study, the entrance dose measurements were performed for total of 451 treatment fields, and 338 patients over one year period. The mean value and the standard deviation for different groups were: breast +1.0% ± 2.89%(1 SD, brain, and head and neck - +0.74% ± 2.04%(1 SD, and isocentric pelvis and abdomen - +0.1% ± 2.86%(1 SD. All measurements - +0.72% ± 2.64%(1 SD. In our experience, systematic in vivo dosimetry proved to be a very useful tool for quality assurance of patient's plan and treatment, both in detecting systematic errors and for estimating the accuracy of radiotherapy treatment delivery.

  9. X-ray measurement with Pin type semiconductor detectors; Medicion de rayos X con detectores de semiconductor tipo PIN

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez J, F.J. [Instituto Nacional de Investigaciones Nucleares, Departamento de Electronica, C.P. 52045 Salazar, Estado de Mexico (Mexico)

    2000-07-01

    Here are presented the experimental results of the applications of Pin type radiation detectors developed in a National Institute of Nuclear Research (ININ) project, in the measurement of low energy gamma and X-rays. The applications were oriented mainly toward the Medical Physics area. It is planned other applications which are in process of implementation inside the National Institute of Nuclear Research in Mexico. (Author)

  10. HOT GAS HALOS IN EARLY-TYPE FIELD GALAXIES

    International Nuclear Information System (INIS)

    Mulchaey, John S.; Jeltema, Tesla E.

    2010-01-01

    We use Chandra and XMM-Newton to study the hot gas content in a sample of field early-type galaxies. We find that the L X -L K relationship is steeper for field galaxies than for comparable galaxies in groups and clusters. The low hot gas content of field galaxies with L K ∼ * suggests that internal processes such as supernovae-driven winds or active galactic nucleus feedback expel hot gas from low-mass galaxies. Such mechanisms may be less effective in groups and clusters where the presence of an intragroup or intracluster medium can confine outflowing material. In addition, galaxies in groups and clusters may be able to accrete gas from the ambient medium. While there is a population of L K ∼ * galaxies in groups and clusters that retain hot gas halos, some galaxies in these rich environments, including brighter galaxies, are largely devoid of hot gas. In these cases, the hot gas halos have likely been removed via ram pressure stripping. This suggests a very complex interplay between the intragroup/intracluster medium and hot gas halos of galaxies in rich environments, with the ambient medium helping to confine or even enhance the halos in some cases and acting to remove gas in others. In contrast, the hot gas content of more isolated galaxies is largely a function of the mass of the galaxy, with more massive galaxies able to maintain their halos, while in lower mass systems the hot gas escapes in outflowing winds.

  11. Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended n-Type Semiconductor.

    Science.gov (United States)

    Campos, Antonio; Riera-Galindo, Sergi; Puigdollers, Joaquim; Mas-Torrent, Marta

    2018-05-09

    Solution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSCs) lags behind their p-type counterparts. The trapping of electrons at the semiconductor-dielectric interface leads to a lower performance and operational stability. Herein, we report printed small-molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor-dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast deterioration of the OSC. Additionally, a complementary metal-oxide semiconductor-like inverter is fabricated depositing p-type and n-type OSCs simultaneously.

  12. Electronic passivation of n- and p-type GaAs using chemical vapor deposited GaS

    Science.gov (United States)

    Tabib-Azar, Massood; Kang, Soon; Macinnes, Andrew N.; Power, Michael B.; Barron, Andrew R.; Jenkins, Phillip P.; Hepp, Aloysius F.

    1993-01-01

    We report on the electronic passivation of n- and p-type GaAs using CVD cubic GaS. Au/GaS/GaAs-fabricated metal-insulator-semiconductor (MIS) structures exhibit classical high-frequency capacitor vs voltage (C-V) behavior with well-defined accumulation and inversion regions. Using high- and low-frequency C-V, the interface trap densities of about 10 exp 11/eV per sq cm on both n- and p-type GaAs are determined. The electronic condition of GaS/GaAs interface did not show any deterioration after a six week time period.

  13. Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p -type amorphous oxide semiconductors

    Science.gov (United States)

    de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

    2018-01-01

    Amorphous semiconductors are usually characterized by a low charge carrier mobility, essentially related to their lack of long-range order. The development of such material with higher charge carrier mobility is hence challenging. Part of the issue comes from the difficulty encountered by first-principles simulations to evaluate concepts such as the electron effective mass for disordered systems since the absence of periodicity induced by the disorder precludes the use of common concepts derived from condensed matter physics. In this paper, we propose a methodology based on first-principles simulations that partially solves this problem, by quantifying the degree of delocalization of a wave function and of the connectivity between the atomic sites within this electronic state. We validate the robustness of the proposed formalism on crystalline and molecular systems and extend the insights gained to disordered/amorphous InGaZnO4 and Si. We also explore the properties of p -type oxide semiconductor candidates recently reported to have a low effective mass in their crystalline phases [G. Hautier et al., Nat. Commun. 4, 2292 (2013), 10.1038/ncomms3292]. Although in their amorphous phase none of the candidates present a valence band with delocalization properties matching those found in the conduction band of amorphous InGaZnO4, three of the seven analyzed materials show some potential. The most promising candidate, K2Sn2O3 , is expected to possess in its amorphous phase a slightly higher hole mobility than the electron mobility in amorphous silicon.

  14. Temperature Modulation with Specified Detection Point on Metal Oxide Semiconductor Gas Sensors for E-Nose Application

    Directory of Open Access Journals (Sweden)

    Arief SUDARMAJI

    2015-03-01

    Full Text Available Temperature modulation technique, some called dynamic measurement mode, on Metal-Oxide Semiconductor (MOS/MOX gas sensor has been widely observed and employed in many fields. We present its development, a Specified Detection Point (SDP on modulated sensing element of MOS sensor is applied which associated to its temperature modulation, temperature modulation-SDP so-named. We configured the rectangular modulation signal for MOS gas sensors (TGSs and FISs using PSOC CY8C28445-24PVXI (Programmable System on Chip which also functioned as acquisition unit and interface to a computer. Initial responses and selectivity evaluations were performed using statistical tool and Principal Component Analysis (PCA to differ sample gases (Toluene, Ethanol and Ammonia on dynamic chamber measurement under various frequencies (0.25 Hz, 1 Hz, 4 Hz and duty-cycles (25 %, 50 %, 75 %. We found that at lower frequency the response waveform of the sensors becomes more sloping and distinct, and selected modulations successfully increased the selectivity either on singular or array sensors rather than static temperature measurement.

  15. A new type of a gas scintillating chamber

    International Nuclear Information System (INIS)

    Khoury, H.J.

    1981-01-01

    In a previous paper (H.J. Khoury - thesis - 1978) the author has described a new type of a gas scintillating chamber, in which the light emitted by excitation of the gas, due to the passage of a charged incoming particle, has its intensity increased by the action of an applied electric field. New experiments are described which contribute to a deeper understanding of the phenomena involved in the scintillating chamber due to the nature of the gas, the electric field and spatial distribution, etc.. The behaviour of the gas scintillation counter is studied both in the proportional region and in the region of limited proportionality. It is shown that by the use of a suitable gas mixture and applied electric field, the resolution of an alpha particle spectrum is considerably increased and values up to 0,9% can be attained. (Author) [pt

  16. Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor films

    Directory of Open Access Journals (Sweden)

    F. Schipani

    2012-09-01

    Full Text Available The oxygen adsorption effects on the Schottky barriers height measurements for thick films gas sensors prepared with undoped nanometric SnO2 particles were studied. From electrical measurements, the characteristics of the intergranular potential barriers developed at intergrains were deduced. It is shown that the determination of effective activation energies from conduction vs. 1/temperature curves is not generally a correct manner to estimate barrier heights. This is due to gas adsorption/desorption during the heating and cooling processes, the assumption of emission over the barrier as the dominant conduction mechanism, and the possible oxygen diffusion into or out of the grains.

  17. Multi-gas interaction modeling on decorated semiconductor interfaces: A novel Fermi distribution-based response isotherm and the inverse hard/soft acid/base concept

    Science.gov (United States)

    Laminack, William; Gole, James

    2015-12-01

    A unique MEMS/NEMS approach is presented for the modeling of a detection platform for mixed gas interactions. Mixed gas analytes interact with nanostructured decorating metal oxide island sites supported on a microporous silicon substrate. The Inverse Hard/Soft acid/base (IHSAB) concept is used to assess a diversity of conductometric responses for mixed gas interactions as a function of these nanostructured metal oxides. The analyte conductometric responses are well represented using a combination diffusion/absorption-based model for multi-gas interactions where a newly developed response absorption isotherm, based on the Fermi distribution function is applied. A further coupling of this model with the IHSAB concept describes the considerations in modeling of multi-gas mixed analyte-interface, and analyte-analyte interactions. Taking into account the molecular electronic interaction of both the analytes with each other and an extrinsic semiconductor interface we demonstrate how the presence of one gas can enhance or diminish the reversible interaction of a second gas with the extrinsic semiconductor interface. These concepts demonstrate important considerations in the array-based formats for multi-gas sensing and its applications.

  18. Behaviour of gas production from type 3 hydrate reservoirs

    Energy Technology Data Exchange (ETDEWEB)

    Pooladi-Darvish, M. [Calgary Univ., AB (Canada). Dept. of Chemical and Petroleum Engineering]|[Fekete Associates Inc., Calgary, AB (Canada); Zatsepina, O. [Calgary Univ., AB (Canada). Dept. of Chemical and Petroleum Engineering; Hong, H. [Fekete Associates Inc., Calgary, AB (Canada)

    2008-07-01

    The possible role of gas hydrates as a potential energy resource was discussed with particular reference to methods for estimating the rate of gas production from hydrate reservoirs under different operating conditions. This paper presented several numerical simulations studies of gas production from type 3 hydrate reservoirs in 1-D and 2-D geometries. Type 3 reservoirs include gas production from hydrate-reservoirs that lie totally within the hydrate stability zone and are sandwiched by impermeable layers on top and bottom. The purpose of this study was to better understand hydrate decomposition by depressurization. The study questioned whether 1-D modeling of type 3 hydrate reservoirs is a reasonable approximation. It also determined whether gas rate increases or decreases with time. The important reservoir characteristics for determining the rate of gas production were identified. Last, the study determined how competition between fluid and heat flow affects hydrate decomposition. This paper also described the relation and interaction between the heat and fluid flow mechanisms in depressurization of type 3 hydrate reservoirs. All results of 1-D and 2-D numerical simulation and analyses were generated using the STARS simulator. It was shown that the rate of gas production depends on the initial pressure/temperature conditions and permeability of the hydrate bearing formation. A high peak rate may be achieved under favourable conditions, but this peak rate is obtained after an initial period where the rate of gas production increases with time. The heat transfer in the direction perpendicular to the direction of fluid flow is significant, requiring 2D modeling. The hydraulic diffusivity is low because of the low permeability of hydrate-bearing formations. This could result in competition between heat and fluid flow, thereby influencing the behaviour of decomposition. 6 refs., 3 tabs., 12 figs.

  19. Study of non-stoichiometric BaSrTiFeO3 oxide dedicated to semiconductor gas sensors

    International Nuclear Information System (INIS)

    Fasquelle, D.; Verbrugghe, N.; Deputier, S.

    2016-01-01

    Developing instrumentation systems compatible with the European RoHS directive (restriction of hazardous substances) to monitor our environment is of great interest for our society. Our research therefore aims at developing innovating integrated systems of detection dedicated to the characterization of various environmental exposures. These systems, which integrate new gas sensors containing lead-free oxides, are dedicated to the detection of flammable and toxic gases. We have firstly chosen to study semiconductor gas sensors implemented with lead-free oxides in view to develop RoHS devices. Therefore thick films deposited by spin-coating and screen-printing have been chosen for their robustness, ease to realize and ease to finally obtain cost-effective sensors. As crystalline defects and ionic vacancies are of great interest for gas detection, we have decided to study a non-stoichiometric composition of the BaSrTiFeO 3 sensible oxide. Nonstoichiometric BaSrTiFeO 3 lead-free oxide thick films were deposited by screen-printing on polycrystalline AFO 3 substrates covered by a layer of Ag-Pd acting as bottom electrode. The physical characterizations have revealed a crystalline structure mainly composed of BaTiO 3 pseudo-cubic phase and Ba 4 Ti 12 O 27 monoclinic phase for the powder, and a porous microstructure for the thick films. When compared to a BSTF thick film with a stoichiometric composition, a notable increase in the BSTF dielectric constant value was observed when taking into account of a similar microstructure and grain size. The loss tangent mean value varies more softly for the non-stoichiometric BaSrTiFeO 3 films than for the perovskite BSTF film as tanδ decreases from 0.45 to 0.04 when the frequency increases from 100 Hz to 1 MHz. (paper)

  20. Multi-gas interaction modeling on decorated semiconductor interfaces: A novel Fermi distribution-based response isotherm and the inverse hard/soft acid/base concept

    Energy Technology Data Exchange (ETDEWEB)

    Laminack, William [Department of Physics, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Gole, James, E-mail: James.Gole@physics.gatech.edu [Department of Physics, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Department of Mechanical Engineering, Georgia Tech, Atlanta, GA 30332 (United States)

    2015-12-30

    Graphical abstract: Visual representation of the PS interface interacting with mixed gas configurations. The red dots correspond to nanostructured metal oxides. Each combination of distinct molecules are labeled below the pores, which are oversized in the figure. - Highlights: • First study of mixed gas analytes interacting with a micro-porous silicon substrate. • Responses are represented by a newly developed response absorption isotherm. • This isotherm is modeled on the basis of the Fermi distribution function. • The developing IHSAB concept explains multi-gas analyte–analyte interactions. - Abstract: A unique MEMS/NEMS approach is presented for the modeling of a detection platform for mixed gas interactions. Mixed gas analytes interact with nanostructured decorating metal oxide island sites supported on a microporous silicon substrate. The Inverse Hard/Soft acid/base (IHSAB) concept is used to assess a diversity of conductometric responses for mixed gas interactions as a function of these nanostructured metal oxides. The analyte conductometric responses are well represented using a combination diffusion/absorption-based model for multi-gas interactions where a newly developed response absorption isotherm, based on the Fermi distribution function is applied. A further coupling of this model with the IHSAB concept describes the considerations in modeling of multi-gas mixed analyte–interface, and analyte–analyte interactions. Taking into account the molecular electronic interaction of both the analytes with each other and an extrinsic semiconductor interface we demonstrate how the presence of one gas can enhance or diminish the reversible interaction of a second gas with the extrinsic semiconductor interface. These concepts demonstrate important considerations in the array-based formats for multi-gas sensing and its applications.

  1. Thin-film antifuses for pellistor type gas sensors

    NARCIS (Netherlands)

    Kovalgin, Alexeij Y.; Holleman, J.; van den Berg, Albert; Wallinga, Hans

    2001-01-01

    This work extends our previously reported idea of using the nano-scale conductive link (antifuse) as a combined heating /detecting element in a Pellistor-type gas sensor. Our new thin-film antifuse is designed in such a way that the oxide, for minimising the bulk influence on surface temperature,

  2. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  3. Examination on the actual situation of safety measures for the gas used in semiconductor industry of U. S. A. Amerika no handotai kogyoyo gas no anzen taisaku no jitsujo wo mite

    Energy Technology Data Exchange (ETDEWEB)

    Horiguchi, S [National Inst. of Materials and Chemical Research, Tsukuba (Japan)

    1993-06-15

    In compliance with the request of the Compressed Gas Safety Association of Japan, the visits to the Department of Transportation (DOT), the Occupational Safety and Health Administration, Department of Labor (OSHA), which are the apparatus of government, the Compressed Gas Association (CGA), the makers of gas used in the semiconductor industry, the makers of cylinder cabinet, and the semiconductor manufacturing factories run by Japanese were made by the present authors in order to examine the actual situations of the safety measure to the gas used in semiconductor industry of U.S.A. In this paper, the viewpoints as well as the actual situation relating to the safety measure to the compressed gas in said visited apparatus and enterprises are introduced. Especially, a number of points which should be referred to are indicated that recently in America, the control of the dangerous materials are regulated rigorously due to the environmental problems, and additionally the files of material safety data sheet based on Hazard communication of OSHA are ranged in the passageways for being read freely, the certain safety educations are given to the employees in offices and the visiting traders or marketers concerned as the duty. 1 fig., 2 tabs.

  4. Refining fuels of the heavy gas--oil type

    Energy Technology Data Exchange (ETDEWEB)

    Bruzac, J F.A.

    1930-01-28

    This invention has for its object the production of a new type of gas-oil fuel, obtained from crude petroleum, shale oil, and peat oil, according to the method of treatment mentioned, by means of which is obtained from gas oil, shale oil, lignite oil, and peat oil (deprived of asphaltic, and bituminous, resinous, and sulfur compounds), a fuel suitable for running Diesel, Junkers, and Clerget motors and all others of the same kind, by diminishing considerably the fouling and attack on the metal.

  5. An Imide-Based Pentacyclic Building Block for n-Type Organic Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Fu-Peng [Soochow Univ., Suzhou (China). Inst. of Functional Nano & Soft Materials (FUNSOM); Un, Hio-Ieng [Peking Univ., Beijing (China). Beijing National Lab. for Molecular Sciences, Key Lab. of Bioorganic Chemistry and Molecular Engineering of Ministry of Education, Key Lab. of Polymer Chemistry and Physics of Ministry of Education, Center for Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering; Li, Yongxi [Soochow Univ., Suzhou (China). Inst. of Functional Nano & Soft Materials (FUNSOM); Hu, Hailiang [Soochow Univ., Suzhou (China). Inst. of Functional Nano & Soft Materials (FUNSOM); Yuan, Yi [Soochow Univ., Suzhou (China). Inst. of Functional Nano & Soft Materials (FUNSOM); Yang, Bin [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Xiao, Kai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Chen, Wei [Argonne National Lab. (ANL), Lemont, IL (United States). Science Div.; Wang, Jie-Yu [Peking Univ., Beijing (China). Beijing National Lab. for Molecular Sciences, Key Lab. of Bioorganic Chemistry and Molecular Engineering of Ministry of Education, Key Lab. of Polymer Chemistry and Physics of Ministry of Education, Center for Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering; Jiang, Zuo-Quan [Soochow Univ., Suzhou (China). Inst. of Functional Nano & Soft Materials (FUNSOM); Pei, Jian [Peking Univ., Beijing (China). Beijing National Lab. for Molecular Sciences, Key Lab. of Bioorganic Chemistry and Molecular Engineering of Ministry of Education, Key Lab. of Polymer Chemistry and Physics of Ministry of Education, Center for Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering; Liao, Liang-Sheng [Soochow Univ., Suzhou (China). Inst. of Functional Nano & Soft Materials (FUNSOM)

    2017-10-09

    A new electron-deficient unit with fused 5-heterocyclic ring was developed by replacing a cyclopenta-1,3-diene from electron-rich donor indacenodithiophene (IDT) with cyclohepta- 4,6-diene-1,3-diimde unit. The imide bridging endows BBI with fixed planar configuration and both low the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbit (LUMO) energy levels. Organic field-effect transistors (OFETs) based on BBI polymers exhibit electron mobility up to 0.34 cm2 V-1 s-1, which indicates that the BBI is a promising ntype semiconductor for optoelectronics.

  6. Fast detoxication of 2-chloro ethyl ethyl sulfide by p-type Ag_2O semiconductor nanoparticle-loaded Al_2O_3-based supports

    International Nuclear Information System (INIS)

    Ma, Meng-Wei; Kuo, Dong-Hau

    2016-01-01

    Highlights: • Detoxication of CWA surrogate of 2-chloro ethyl ethyl sulfide is investigated. • A small amount of Ag_2O on Al_2O_3-base support is sufficient to degrade 2-CEES. • Detoxication conversion >82% in 15 min is achieved for >2.5% Ag_2O/Na_2SiO_3/Al_2O_3. • Na_2SiO_3 modified Al_2O_3 to have the valley-like line pattern for depositing Ag_2O. • 2-CEES oxidation is initiated from the dominant electronic holes in p-type Ag_2O. - Abstract: p-type Ag_2O semiconductor nanoparticle-loaded Al_2O_3 or Na_2SiO_3/Al_2O_3 powders used for detoxicating the surrogate of sulfur mustard of 2-chloro ethyl ethyl sulfide (C_2H_5SCH_2CH_2Cl, 2-CEES) were investigated. Different amounts of Ag_2O and Na_2SiO_3 on catalyst supports were evaluated. Gas chromatography with a pulsed flame photometric detector (GC–PFPD) and gas chromatography coupled with a mass spectroscopy (GC–MS) were used to monitor and identify the catalytic reactions, together with reaction products analysis. The GC analyses showed that the decontamination of 2-CEES in isopropanol solvent for 15 min was above 82% efficiency for the 0.5% Na_2SiO_3/Al_2O_3 support deposited with a Ag_2O content above 2.5%. 2-(ethylthio)ethanol and 2-(ethylthio)ethanoic acid were identified as the major products after catalytic reactions. The electronic holes dominating in p-type Ag_2O is proposed to provide the key component and to initiate the catalytic reactions. The electronic hole-based detoxication mechanism is proposed.

  7. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  8. Terahertz radiation by subpicosecond spin-polarized photocurrent originating from Dirac electrons in a Rashba-type polar semiconductor

    Science.gov (United States)

    Kinoshita, Yuto; Kida, Noriaki; Miyamoto, Tatsuya; Kanou, Manabu; Sasagawa, Takao; Okamoto, Hiroshi

    2018-04-01

    The spin-splitting energy bands induced by the relativistic spin-orbit interaction in solids provide a new opportunity to manipulate the spin-polarized electrons on the subpicosecond timescale. Here, we report one such example in a bulk Rashba-type polar semiconductor BiTeBr. Strong terahertz electromagnetic waves are emitted after the resonant excitation of the interband transition between the Rashba-type spin-splitting energy bands with a femtosecond laser pulse circularly polarized. The phase of the emitted terahertz waves is reversed by switching the circular polarization. This suggests that the observed terahertz radiation originates from the subpicosecond spin-polarized photocurrents, which are generated by the asymmetric depopulation of the Dirac state. Our result provides a way for the current-induced terahertz radiation and its phase control by the circular polarization of incident light without external electric fields.

  9. Gas-surface dynamics and charging effects during plasma processing of semiconductors

    Science.gov (United States)

    Hwang, Gyeong Soon

    This thesis work attempts to elucidate the fundamentals of gas-surface interactions that occur during plasma etching. Controlled experiments using hyperthermal fluorine beams have enabled us to uncover the scattering dynamics at complex surfaces similar to those encountered in etching. By analyzing energy and angular distributions of inelastically scattered F atoms, we were able to distinguish single- and multiple-bounce scattering and to develop models to describe these exit channels. Furthermore, we found that hard-sphere collision kinematics can capture well the energy transfer of the hyperthermal F atoms onto fluorinated silicon surfaces. Based on the fundamental scattering information, we have developed a kinetic model that is described by two parameters: (1) direct inelastic scattering probability and (2) sticking (reaction) probability. These parameters are formulated as a function of the incident energy and angle of F atoms. By incorporating the empirical kinetic model into Monte Carlo based profile evolution simulations, we have unraveled the origin of many etch profile peculiarities which appear during hyperthermal F-beam etching, such as microtrenching, inverse microloading, and undercutting. The kinetic model has been used to describe successfully etching in Cl2-plasmas. For the study of pattern-dependent charging, we have developed a numerical model that combines plasma, sheath, and charging dynamics. The charging simulations illustrate that the directionality difference between ions and electrons arriving at the wafer, brought about by the sheath, causes differential charging on patterned areas even when the plasma is uniform. Using the newly developed charging model, we have investigated gate oxide damage. The results show that a potential drop across the thin gate oxide caused by differential microstructure charging is primarily responsible for gate oxide degradation by driving Fowler-Nordheim stress currents. In general, increasing the flux of low

  10. Practical Use of Metal Oxide Semiconductor Gas Sensors for Measuring Nitrogen Dioxide and Ozone in Urban Environments.

    Science.gov (United States)

    Peterson, Philip J D; Aujla, Amrita; Grant, Kirsty H; Brundle, Alex G; Thompson, Martin R; Vande Hey, Josh; Leigh, Roland J

    2017-07-19

    The potential of inexpensive Metal Oxide Semiconductor (MOS) gas sensors to be used for urban air quality monitoring has been the topic of increasing interest in the last decade. This paper discusses some of the lessons of three years of experience working with such sensors on a novel instrument platform (Small Open General purpose Sensor (SOGS)) in the measurement of atmospheric nitrogen dioxide and ozone concentrations. Analytic methods for increasing long-term accuracy of measurements are discussed, which permit nitrogen dioxide measurements with 95% confidence intervals of 20.0 μ g m - 3 and ozone precision of 26.8 μ g m - 3 , for measurements over a period one month away from calibration, averaged over 18 months of such calibrations. Beyond four months from calibration, sensor drift becomes significant, and accuracy is significantly reduced. Successful calibration schemes are discussed with the use of controlled artificial atmospheres complementing deployment on a reference weather station exposed to the elements. Manufacturing variation in the attributes of individual sensors are examined, an experiment possible due to the instrument being equipped with pairs of sensors of the same kind. Good repeatability (better than 0.7 correlation) between individual sensor elements is shown. The results from sensors that used fans to push air past an internal sensor element are compared with mounting the sensors on the outside of the enclosure, the latter design increasing effective integration time to more than a day. Finally, possible paths forward are suggested for improving the reliability of this promising sensor technology for measuring pollution in an urban environment.

  11. Materials for n-type organic electronics: synthesis and properties of fluoroarene-thiophene semiconductors

    Science.gov (United States)

    Facchetti, Antonio; Yoon, Myung-Han; Katz, Howard E.; Marks, Tobin J.

    2003-11-01

    Recent progress in the field of organic electronics is due to a fruitful combination of both innovative molecular design and promising low-cost material/device assembly. Targeting the first strategy, we present here the general synthesis of fluoroarene-containing thiophene-based semiconductors and the study of their properties with respect to the corresponding fluorine-free hole-transporting analogues. The new compounds have been characterized by elemental analysis, mass spectrometry, and 1H- and 19F NMR. The dramatic influence of fluorine substitution and molecular architecture has been investigated by solution/film optical absorption, fluorescence emission, and cyclic voltammetry. Single crystal data for all of the oligomers have been obtained and will be presented. Film microstructure and morphology of this new class of materials have been studied by XRD and SEM. Particular emphasis will be posed on the solution-processable oligomers and polymers.

  12. Conjugate acene fused buckybowls: evaluating their suitability for p-type, ambipolar and n-type air stable organic semiconductors.

    Science.gov (United States)

    Purushotham, Uppula; Sastry, G Narahari

    2013-04-14

    Elaborate and exhaustive first principles calculations were carried out to screen the novel properties of a series of acene fused buckybowls. The acene fused compounds exhibit hole transport property due to their higher electron injection and lower hole transport barrier relative to the work function potential of Au electrodes. The higher HOMO and lower LUMO energy levels suggest lower hole and electron injection barriers of F and CN substituted and boron doped bowls which indicates ambipolar property of these bowls. The dicyano substituted pentacene fused bowls show only electron transport property with lower LUMO (-4.26 eV to -4.27 eV) and higher HOMO (-5.56 eV to -5.90 eV) energy levels. High electron affinity (>2.80 eV) and low LUMO energy (semiconductors.

  13. Liquid-metal-gas heat exchanger for HTGR type reactors

    International Nuclear Information System (INIS)

    Werth, G.

    1980-01-01

    The aim of this study is to investigate the heat transfer characteristics of a liquid metal heat exchanger (HE) for a helium-cooled high temperature reactor. A tube-type heat exchanger is considered as well as two direct exchangers: a bubble-type heat exchanger and a heat exchanger according to the spray principle. Experiments are made in order to determine the gas content of bubble-type heat exchangers, the dependence of the droplet diameter on the nozzle diameter, the falling speed of the droplets, the velocity of the liquid jet, and the temperature variation of liquid jets. The computer codes developed for HE calculation are structured so that they may be used for gas/liquid HE, too. Each type of HE that is dealt with is designed by accousting for a technical and an economic assessment. The liquid-lead jet spray is preferred to all other types because of its small space occupied and its simple design. It shall be used in near future in the HTR by the name of lead/helium HE. (GL) [de

  14. Study of various n-type organic semiconductors on ultraviolet detective and electroluminescent properties of optoelectronic integrated device

    Science.gov (United States)

    Deng, Chaoxu; Shao, Bingyao; Zhao, Dan; Zhou, Dianli; Yu, Junsheng

    2017-11-01

    Organic optoelectronic integrated device (OID) with both ultraviolet (UV) detective and electroluminescent (EL) properties was fabricated by using a thermally activated delayed fluorescence (TADF) semiconductor of (4s, 6s)-2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile (4CzIPN) as an emitter. The effect of five kinds of n-type organic semiconductors (OSCs) on the enhancement of UV detective and EL properties of OID was systematically studied. The result shows that two orders of magnitude in UV detectivity from 109 to 1011 Jones and 3.3 folds of luminance from 2499 to 8233 cd m-2 could be achieved. The result shows that not only the difference of lowest unoccupied molecular orbital (LUMO) between active layer and OSC but also the variety of electron mobility have a significant effect on the UV detective and EL performance through adjusting electron injection/transport. Additionally, the optimized OSC thickness is beneficial to confine the leaking of holes from the active layer to cathode, leading to the decrease of dark current for high detective performance. This work provides a useful method on broadening OSC material selection and device architecture construction for the realization of high performance OID.

  15. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  16. Tuning the p-type Schottky barrier in 2D metal/semiconductor interface:boron-sheet on MoSe2, and WSe2

    Science.gov (United States)

    Couto, W. R. M.; Miwa, R. H.; Fazzio, A.

    2017-10-01

    Van der Waals (vdW) metal/semiconductor heterostructures have been investigated through first-principles calculations. We have considered the recently synthesized borophene (Mannix et al 2015 Science 350 1513), and the planar boron sheets (S1 and S2) (Feng et al 2016 Nat. Chem. 8 563) as the 2D metal layer, and the transition metal dichalcogenides (TMDCs) MoSe2, and WSe2 as the semiconductor monolayer. We find that the energetic stability of those 2D metal/semiconductor heterojunctions is mostly ruled by the vdW interactions; however, chemical interactions also take place in borophene/TMDC. The electronic charge transfer at the metal/semiconductor interface has been mapped, where we find a a net charge transfer from the TMDCs to the boron sheets. Further electronic structure calculations reveal that the metal/semiconductor interfaces, composed by planar boron sheets S1 and S2, present a p-type Schottky barrier which can be tuned to a p-type ohmic contact by an external electric field.

  17. A Density Functional Theory Study of Doped Tin Monoxide as a Transparent p-type Semiconductor

    KAUST Repository

    Bianchi Granato, Danilo

    2012-01-01

    that yttrium and lanthanum improves the hole mobility. Present results are in good agreement with available experimental works and help to improve the understanding on how to engineer transparent p-type materials with higher hole mobilities.

  18. Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors

    KAUST Repository

    Caraveo-Frescas, J. A.; Alshareef, Husam N.

    2013-01-01

    p-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 °C. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm2 V−1 s−1) of any p

  19. Configurational rearrangements of bistable centers in covalent semiconductors - phase transitions of the second type

    International Nuclear Information System (INIS)

    Ivanyukovich, V.A.; Karas', V.I.; Lomako, V.M.

    1989-01-01

    A new radiation configurational-bistable defect diffring from the known similar defects by the fact that it possessestemperature inversion of states is detected in gallium arsenide. Configurational-bistable rearrangements are shown to be considered as phase transitions of the second type

  20. Description of the magnox type of gas cooled reactor (MAGNOX)

    International Nuclear Information System (INIS)

    Jensen, S.E.; Nonboel, E.

    1999-05-01

    The present report comprises a technical description of the MAGNOX type of reactor as it has been build in Great Britain. The Magnox reactor is gas cooled (CO 2 ) with graphite moderators. The fuels is natural uranium in metallic form, canned with a magnesium alloy called 'Magnox'. The Calder Hall Magnox plant on the Lothian coastline of Scotland, 60 km east of Edinburgh, has been chosen as the reference plant and is described in some detail. Data on the other stations are given in tables with a summary of design data. Special design features are also shortly described. Where specific data for Calder Hall Magnox has not been available, corresponding data from other Magnox plants has been used. The information presented is based on the open literature. The report is written as a part of the NKS/RAK-2 sub-project 3: 'Reactors in Nordic Surroundings', which comprises a description of nuclear power plants neighbouring the Nordic countries. (au)

  1. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  2. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  3. Designing small molecule polyaromatic p- and n-type semiconductor materials for organic electronics

    KAUST Repository

    Collis, Gavin E.

    2015-12-22

    By combining computational aided design with synthetic chemistry, we are able to identify core 2D polyaromatic small molecule templates with the necessary optoelectronic properties for p- and n-type materials. By judicious selection of the functional groups, we can tune the physical properties of the material making them amenable to solution and vacuum deposition. In addition to solubility, we observe that the functional group can influence the thin film molecular packing. By developing structure-property relationships (SPRs) for these families of compounds we observe that some compounds are better suited for use in organic solar cells, while others, varying only slightly in structure, are favoured in organic field effect transistor devices. We also find that the processing conditions can have a dramatic impact on molecular packing (i.e. 1D vs 2D polymorphism) and charge mobility; this has implications for material and device long term stability. We have developed small molecule p- and n-type materials for organic solar cells with efficiencies exceeding 2%. Subtle variations in the functional groups of these materials produces p- and ntype materials with mobilities higher than 0.3 cm2/Vs. We are also interested in using our SPR approach to develop materials for sensor and bioelectronic applications.

  4. Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor

    International Nuclear Information System (INIS)

    Chen Hai-Feng; Guo Li-Xin; Zheng Pu-Yang; Dong Zhao; Zhang Qian

    2015-01-01

    Drain-modulated generation current I DMG induced by interface traps in an n-type metal-oxide-semiconductor field-effect transistor (nMOSFET) is investigated. The formation of I DMG ascribes to the change of the Si surface potential φ s . This change makes the channel suffer transformation from the inversion state, depletion I state to depletion II state. The simulation result agrees with the experiment in the inversion and depletion I states. In the depletion II state, the theoretical curve goes into saturation, while the experimental curve drops quickly as V D increases. The reason for this unconformity is that the drain-to-gate voltage V DG lessens φ s around the drain corner and controls the falling edge of the I DMG curve. The experiments of gate-modulated generation and recombination currents are also applied to verify the reasonability of the mechanism. Based on this mechanism, a theoretical model of the I DMG falling edge is set up in which I DMG has an exponential attenuation relation with V DG . Finally, the critical fitting coefficient t of the experimental curves is extracted. It is found that t = 80 mV = 3kT/q. This result fully shows the accuracy of the above mechanism. (paper)

  5. Electron mobilities of n-type organic semiconductors from time-dependent wavepacket diffusion method: pentacenequinone derivatives.

    Science.gov (United States)

    Zhang, WeiWei; Zhong, XinXin; Zhao, Yi

    2012-11-26

    The electron mobilities of two n-type pentacenequinone derivative organic semiconductors, 5,7,12,14-tetraaza-6,13-pentacenequinone (TAPQ5) and 1,4,8,11-tetraaza-6,13-pentacenequinone (TAPQ7), are investigated with use of the methods of electronic structure and quantum dynamics. The electronic structure calculations reveal that the two key parameters for the control of electron transfer, reorganization energy and electronic coupling, are similar for these two isomerization systems, and the charge carriers essentially display one-dimensional transport properties. The mobilities are then calculated by using the time-dependent wavepacket diffusion approach in which the dynamic fluctuations of the electronic couplings are incorporated via their correlation functions obtained from molecular dynamics simulations. The predicted mobility of TAPQ7 crystal is about six times larger than that of TAPQ5 crystal. Most interestingly, Fermi's golden rule predicts the mobilities very close to those from the time-dependent wavepacket diffusion method, even though the electronic couplings are explicitly large enough to make the perturbation theory invalid. The possible reason is analyzed from the dynamic fluctuations.

  6. Manifestation of surface phonons in far infrared reflectivity of diamond-type semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Perez-Sanchez, F.L.; Perez-Rodriguez, F. [Instituto de Fisica, Universidad Autonoma de Puebla, Apdo. Post. J-48, Puebla, Pue. 72570 (Mexico)

    2004-11-01

    The coupling of surface phonons with light at (001) surfaces of diamond-structure crystals and its manifestation in far-infrared anisotropy spectra are theoretically studied. We apply the adiabatic bond charge model to describe short-range mechanical interactions together with long-range Coulomb forces and radiation fields, and we solve the corresponding system of coupled equations for the electromagnetic field and the lattice vibrations. We calculate far-infrared normal reflectance spectra of (001) surfaces of semi-infinite diamond-type crystals. In particular, we analyse reflectance spectra for the Si(001) (2 x 1) surface, which exhibit a resonance structure associated with the excitation of surface phonon modes. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Stitching Type Large Aperture Depolarizer for Gas Monitoring Imaging Spectrometer

    Science.gov (United States)

    Liu, X.; Li, M.; An, N.; Zhang, T.; Cao, G.; Cheng, S.

    2018-04-01

    To increase the accuracy of radiation measurement for gas monitoring imaging spectrometer, it is necessary to achieve high levels of depolarization of the incoming beam. The preferred method in space instrument is to introduce the depolarizer into the optical system. It is a combination device of birefringence crystal wedges. Limited to the actual diameter of the crystal, the traditional depolarizer cannot be used in the large aperture imaging spectrometer (greater than 100 mm). In this paper, a stitching type depolarizer is presented. The design theory and numerical calculation model for dual babinet depolarizer were built. As required radiometric accuracies of the imaging spectrometer with 250 mm × 46 mm aperture, a stitching type dual babinet depolarizer was design in detail. Based on designing the optimum structural parmeters the tolerance of wedge angle refractive index, and central thickness were given. The analysis results show that the maximum residual polarization degree of output light from depolarizer is less than 2 %. The design requirements of polarization sensitivity is satisfied.

  8. STITCHING TYPE LARGE APERTURE DEPOLARIZER FOR GAS MONITORING IMAGING SPECTROMETER

    Directory of Open Access Journals (Sweden)

    X. Liu

    2018-04-01

    Full Text Available To increase the accuracy of radiation measurement for gas monitoring imaging spectrometer, it is necessary to achieve high levels of depolarization of the incoming beam. The preferred method in space instrument is to introduce the depolarizer into the optical system. It is a combination device of birefringence crystal wedges. Limited to the actual diameter of the crystal, the traditional depolarizer cannot be used in the large aperture imaging spectrometer (greater than 100 mm. In this paper, a stitching type depolarizer is presented. The design theory and numerical calculation model for dual babinet depolarizer were built. As required radiometric accuracies of the imaging spectrometer with 250 mm × 46 mm aperture, a stitching type dual babinet depolarizer was design in detail. Based on designing the optimum structural parmeters,the tolerance of wedge angle,refractive index, and central thickness were given. The analysis results show that the maximum residual polarization degree of output light from depolarizer is less than 2 %. The design requirements of polarization sensitivity is satisfied.

  9. p-Type Transparent Conducting Oxide/n-Type Semiconductor Heterojunctions for Efficient and Stable Solar Water Oxidation.

    Science.gov (United States)

    Chen, Le; Yang, Jinhui; Klaus, Shannon; Lee, Lyman J; Woods-Robinson, Rachel; Ma, Jie; Lum, Yanwei; Cooper, Jason K; Toma, Francesca M; Wang, Lin-Wang; Sharp, Ian D; Bell, Alexis T; Ager, Joel W

    2015-08-05

    Achieving stable operation of photoanodes used as components of solar water splitting devices is critical to realizing the promise of this renewable energy technology. It is shown that p-type transparent conducting oxides (p-TCOs) can function both as a selective hole contact and corrosion protection layer for photoanodes used in light-driven water oxidation. Using NiCo2O4 as the p-TCO and n-type Si as a prototypical light absorber, a rectifying heterojunction capable of light driven water oxidation was created. By placing the charge separating junction in the Si using a np(+) structure and by incorporating a highly active heterogeneous Ni-Fe oxygen evolution catalyst, efficient light-driven water oxidation can be achieved. In this structure, oxygen evolution under AM1.5G illumination occurs at 0.95 V vs RHE, and the current density at the reversible potential for water oxidation (1.23 V vs RHE) is >25 mA cm(-2). Stable operation was confirmed by observing a constant current density over 72 h and by sensitive measurements of corrosion products in the electrolyte. In situ Raman spectroscopy was employed to investigate structural transformation of NiCo2O4 during electrochemical oxidation. The interface between the light absorber and p-TCO is crucial to produce selective hole conduction to the surface under illumination. For example, annealing to produce more crystalline NiCo2O4 produces only small changes in its hole conductivity, while a thicker SiOx layer is formed at the n-Si/p-NiCo2O4 interface, greatly reducing the PEC performance. The generality of the p-TCO protection approach is demonstrated by multihour, stable, water oxidation with n-InP/p-NiCo2O4 heterojunction photoanodes.

  10. Au@NiO core-shell nanoparticles as a p-type gas sensor: Novel synthesis, characterization, and their gas sensing properties with sensing mechanism

    KAUST Repository

    Majhi, Sanjit Manohar

    2018-04-25

    In this work, Au@NiO core-shell nanoparticles (C-S NPs) as a p-type gas sensing material was synthesized by a facile wet-chemical method, and evaluated their gas sensing properties as compared to the pristine NiO NPs gas sensors. Transmission electron microscope (TEM) results exhibited the well-dispersed formation of Au@NiO C-S NPs having the total size of 70–120 nm and NiO shells having 30–50 nm thickness. The C-S morphology as well as the overall particle sizes are unchanged even at 500 °C. The gas sensing result reveals that the response of Au@NiO C-S NPs gas sensor is higher than pristine NiO NPs gas sensor for 100 ppm of ethanol at 200 °C operating temperature. The baseline resistance in the air for Au@NiO C-S NPs sensor is lowered as compared to pristine NiO NPs, which is due to the increased number of holes as charge carriers in Au@NiO C-S NPs. The high response of Au@NiO core-shell NPs as compared to pristine NiO NPs is attributed to electronic and chemical sensitization effects of Au. In Au@NiO C-S structure, the contact between metal (Au) and semiconductor (NiO) formed a Schottky junction since Au metal acted as electron acceptor, a withdrawal of electrons from NiO by Au metal core leaved behind number of holes as charge carriers in Au@NiO C-S NPs. Therefore, the baseline resistance of Au@NiO C-S NPs greatly decreased than pristine NiO NPs, as a result the Au@NiO C-S NPs showed higher response. On the other hand, in chemical sensitization effect, Au NPs catalyzed to dissociate O2 molecules into ionic species. This work will give some clue to the researchers for the further development of p-type based C-S NPs sensors.

  11. Using greenhouse gas fluxes to define soil functional types

    Energy Technology Data Exchange (ETDEWEB)

    Petrakis, Sandra; Barba, Josep; Bond-Lamberty, Ben; Vargas, Rodrigo

    2017-12-04

    Soils provide key ecosystem services and directly control ecosystem functions; thus, there is a need to define the reference state of soil functionality. Most common functional classifications of ecosystems are vegetation-centered and neglect soil characteristics and processes. We propose Soil Functional Types (SFTs) as a conceptual approach to represent and describe the functionality of soils based on characteristics of their greenhouse gas (GHG) flux dynamics. We used automated measurements of CO2, CH4 and N2O in a forested area to define SFTs following a simple statistical framework. This study supports the hypothesis that SFTs provide additional insights on the spatial variability of soil functionality beyond information represented by commonly measured soil parameters (e.g., soil moisture, soil temperature, litter biomass). We discuss the implications of this framework at the plot-scale and the potential of this approach at larger scales. This approach is a first step to provide a framework to define SFTs, but a community effort is necessary to harmonize any global classification for soil functionality. A global application of the proposed SFT framework will only be possible if there is a community-wide effort to share data and create a global database of GHG emissions from soils.

  12. Description of the advanced gas cooled type of reactor (AGR)

    Energy Technology Data Exchange (ETDEWEB)

    Nonboel, E. [Risoe National Lab., Roskilde (Denmark)

    1996-11-01

    The present report comprises a technical description of the Advanced Gas cooled Reactor (AGR), a reactor type which has only been built in Great Britain. 14 AGR reactors have been built, located at 6 different sites and each station is supplied with twin-reactors. The Torness AGR plant on the Lothian coastline of Scotland, 60 km east of Edinburgh, has been chosen as the reference plant and is described in some detail. Data on the other 6 stations, Dungeness B, Hinkely Point B, Hunterston G, Hartlepool, Heysham I and Heysham II, are given only in tables with a summary of design data. Where specific data for Torness AGR has not been available, corresponding data from other AGR plans has been used, primarily from Heysham II, which belongs to the same generation of AGR reactors. The information presented is based on the open literature. The report is written as a part of the NKS/RAK-2 subproject 3: `Reactors in Nordic Surroundings`, which comprises a description of nuclear power plants neighbouring the Nordic countries. (au) 11 refs.

  13. Description of the advanced gas cooled type of reactor (AGR)

    International Nuclear Information System (INIS)

    Nonboel, E.

    1996-11-01

    The present report comprises a technical description of the Advanced Gas cooled Reactor (AGR), a reactor type which has only been built in Great Britain. 14 AGR reactors have been built, located at 6 different sites and each station is supplied with twin-reactors. The Torness AGR plant on the Lothian coastline of Scotland, 60 km east of Edinburgh, has been chosen as the reference plant and is described in some detail. Data on the other 6 stations, Dungeness B, Hinkely Point B, Hunterston G, Hartlepool, Heysham I and Heysham II, are given only in tables with a summary of design data. Where specific data for Torness AGR has not been available, corresponding data from other AGR plans has been used, primarily from Heysham II, which belongs to the same generation of AGR reactors. The information presented is based on the open literature. The report is written as a part of the NKS/RAK-2 subproject 3: 'Reactors in Nordic Surroundings', which comprises a description of nuclear power plants neighbouring the Nordic countries. (au) 11 refs

  14. High-performance n-type organic semiconductors: incorporating specific electron-withdrawing motifs to achieve tight molecular stacking and optimized energy levels.

    Science.gov (United States)

    Yun, Sun Woo; Kim, Jong H; Shin, Seunghoon; Yang, Hoichang; An, Byeong-Kwan; Yang, Lin; Park, Soo Young

    2012-02-14

    Novel π–conjugated cyanostilbene-based semiconductors (Hex-3,5-TFPTA and Hex-4-TFPTA) with tight molecular stacking and optimized energy levels are synthesized. Hex-4-TFPTA exhibits high-performance n-type organic field-effect transistor (OFET) properties with electron mobilities as high as 2.14 cm2 V−1s−1 and on-off current ratios Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Single-event phenomena on recent semiconductor devices. Charge-type multiple-bit upsets in high integrated memories

    International Nuclear Information System (INIS)

    Makihara, Akiko; Shindou, Hiroyuki; Nemoto, Norio; Kuboyama, Satoshi; Matsuda, Sumio; Ohshima, Takeshi; Hirao, Toshio; Itoh, Hisayoshi

    2001-01-01

    High integrated memories are used in solid state data recorder (SSDR) of the satellite for accumulating observation data. Single event upset phenomena which turn over an accumulated data in the memory cells are caused by heavy ion incidence. Studies on single-bit upset and multiple-bit upset phenomena in the high integrated memory cells are in progress recently. 16 Mbit DRAM (Dynamic Random Access Memories) and 64 Mbit DRAM are irradiated by heavy ion species, such as iodine, bromine and nickel, in comparison with the irradiation damage in the cosmic environment. Data written on the memory devices are read out after the irradiation. The memory cells in three kinds of states, all of charged state, all of discharged state, and an alternative state of charge and discharge, are irradiated for sorting out error modes caused by heavy ion incidence. The soft error in a single memory cells is known as a turn over from charged state to discharged state. Electrons in electron-hole pair generated by heavy ion incidence are captured in a diffusion region between capacitor electrodes of semiconductor. The charged states in the capacitor electrodes before the irradiation are neutralized and changed to the discharged states. According to high integration of the memories, many of the cells are affected by a single ion incidence. The multiple-bit upsets, however, are generated in the memory cells of discharged state before the irradiation, also. The charge-type multiple-bit upsets is considered as that error data are written on the DRAM during refresh cycle of a sense-up circuit and a pre-charge circuit which control the DRAM. (M. Suetake)

  16. Future Trend of Non-Volatile Semiconductor Memory and Feasibility Study of BiCS Type Stacked Structure

    OpenAIRE

    渡辺, 重佳

    2009-01-01

    Future trend of non-volatile semiconductor memory—FeRAM, MRAM, PRAM, ReRAM—compared with NAND typeflash memory has been described based on its history, application and performance. In the realistic point of view,FeRAM and MRAM are suitable for embedded memory and main memory, and PRAM and ReRAM are promising candidatesfor main memory and mass-storage memory for multimedia. Furthermore, the feasibility study of aggressiveultra-low-cost high-speed universal non-volatile semiconductor memory has...

  17. 2,6-Bis(benzo[b]thiophen-2-yl-3,7-dipentadecyltetrathienoacene (DBT-TTAR2 as an Alternative of Highly Soluble p-type Organic Semiconductor for Organic Thin Film Transistor (OTFT Application

    Directory of Open Access Journals (Sweden)

    Mery B. Supriadi

    2013-03-01

    Full Text Available A new compound of organic semiconductor based on tetrathienoacene (TTA derivatives, DBT-TTAR2 was synthesized and characterized. The corporation of dibenzo[b,d]thiophene (DBT group and alkyl substituent in both ends of TTA core have a significant effect on their π-π molecular conjugation length, energy gaps value and solubility properties. DBT-TTAR2 is fabricated as p-type organic semiconductor of organic thin film transistor (OTFT by solution process at Industrial Technology Research Institute, Taiwan. A good optical, electrochemical, and thermal properties of DBT-TTAR2 showed that its exhibits a better performance as highly soluble p-type organic semiconductor.

  18. Integration of a nonmetallic electrostatic precipitator and a wet scrubber for improved removal of particles and corrosive gas cleaning in semiconductor manufacturing industries.

    Science.gov (United States)

    Kim, Hak-Joon; Han, Bangwoo; Kim, Yong-Jin; Yoa, Seok-Jun; Oda, Tetsuji

    2012-08-01

    To remove particles in corrosive gases generated by semiconductor industries, we have developed a novel non-metallic, two-stage electrostatic precipitator (ESP). Carbon brush electrodes and grounded carbon fiber-reinforced polymer (CFRP) form the ionization stage, and polyvinyl chloride collection plates are used in the collection stage of the ESP The collection performance of the ESP downstream of a wet scrubber was evaluated with KC1, silica, and mist particles (0.01-10 pm), changing design and operation parameters such as the ESP length, voltage, and flow rate. A long-term and regeneration performance (12-hr) test was conducted at the maximum operation conditions of the scrubber and ESP and the performance was then demonstrated for 1 month with exhaust gases from wet scrubbers at the rooftop of a semiconductor manufacturing plant in Korea. The results showed that the electrical and collection performance of the ESP (16 channels, 400x400 mm2) was maintained with different grounded plate materials (stainless steel and CFRP) and different lengths of the ionization stage. The collection efficiency of the ESP at high air velocity was enhanced with increases in applied voltages and collection plate lengths. The ESP (16 channels with 100 mm length, 400x400 mm2x540 mm with a 10-mm gap) removed more than 90% of silica and mistparticles with 10 and 12 kV applied to the ESPat the air velocity of 2 m/s and liquid-to-gas ratio of 3.6 L/m3. Decreased performance after 13 hours ofcontinuous operation was recovered to the initial performance level by 5 min of water washing. Moreover during the 1-month operation at the demonstration site, the ESP showed average collection efficiencies of 97% based on particle number and 92% based on total particle mass, which were achieved with a much smaller specific corona power of 0.28 W/m3/hr compared with conventional ESPs.

  19. Spatial separation of electrons and holes for enhancing the gas-sensing property of a semiconductor: ZnO/ZnSnO3 nanorod arrays prepared by a hetero-epitaxial growth

    Science.gov (United States)

    Wang, Ying; Gao, Peng; Sha, Linna; Chi, Qianqian; Yang, Lei; Zhang, Jianjiao; Chen, Yujin; Zhang, Milin

    2018-04-01

    The construction of semiconductor composites is known as a powerful method used to realize the spatial separation of electrons and the holes in them, which can result in more electrons or holes and increase the dispersion of oxygen ions ({{{{O}}}2}- and O - ) (one of the most critical factors for their gas-sensing properties) on the surface of the semiconductor gas sensor. In this work, using 1D ZnO/ZnSnO3 nanoarrays as an example, which are prepared through a hetero-epitaxial growing process to construct a chemically bonded interface, the above strategy to attain a better semiconductor gas-sensing property has been realized. Compared with single ZnSnO3 nanotubes and no-matching ZnO/ZnSnO3 nanoarrays gas sensors, it has been proven by x-ray photoelectron spectroscopy and photoluminescence spectrum examination that the as-obtained ZnO/ZnSnO3 sensor showed a greatly increased quantity of active surface electrons with exceptional responses to trace target gases and much lower optimum working temperatures (less than about 170 °C). For example, the as-obtained ZnO/ZnSnO3 sensor exhibited an obvious response and short response/recovery time (less than 10 s) towards trace H2S gas (a detection limit down to 700 ppb). The high responses and dynamic repeatability observed in these sensors reveal that the strategy based on the as-presented electron and hole separation is reliable for improving the gas-sensing properties of semiconductors.

  20. Epitaxial growth of 100-μm thick M-type hexaferrite crystals on wide bandgap semiconductor GaN/Al{sub 2}O{sub 3} substrates

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Bolin; Su, Zhijuan; Bennett, Steve; Chen, Yajie, E-mail: y.chen@neu.edu; Harris, Vincent G. [Center for Microwave Magnetic Materials and Integrated Circuits and Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States)

    2014-05-07

    Thick barium hexaferrite BaFe{sub 12}O{sub 19} (BaM) films having thicknesses of ∼100 μm were epitaxially grown on GaN/Al{sub 2}O{sub 3} substrates from a molten-salt solution by vaporizing the solvent. X-ray diffraction measurement verified the growth of BaM (001) textured growth of thick films. Saturation magnetization, 4πM{sub s}, was measured for as-grown films to be 4.6 ± 0.2 kG and ferromagnetic resonance measurements revealed a microwave linewidth of ∼100 Oe at X-band. Scanning electron microscopy indicated clear hexagonal crystals distributed on the semiconductor substrate. These results demonstrate feasibility of growing M-type hexaferrite crystal films on wide bandgap semiconductor substrates by using a simple powder melting method. It also presents a potential pathway for the integration of ferrite microwave passive devices with active semiconductor circuit elements creating system-on-a-wafer architectures.

  1. A New Tree-Type Fracturing Method for Stimulating Coal Seam Gas Reservoirs

    Directory of Open Access Journals (Sweden)

    Qian Li

    2017-09-01

    Full Text Available Hydraulic fracturing is used widely to stimulate coalbed methane production in coal mines. However, some factors associated with conventional hydraulic fracturing, such as the simple morphology of the fractures it generates and inhomogeneous stress relief, limit its scope of application in coal mines. These problems mean that gas extraction efficiency is low. Conventional fracturing may leave hidden pockets of gas, which will be safety hazards for subsequent coal mining operations. Based on a new drilling technique applicable to drilling boreholes in coal seams, this paper proposes a tree-type fracturing technique for stimulating reservoir volumes. Tree-type fracturing simulation experiments using a large-scale triaxial testing apparatus were conducted in the laboratory. In contrast to the single hole drilled for conventional hydraulic fracturing, the tree-type sub-boreholes induce radial and tangential fractures that form complex fracture networks. These fracture networks can eliminate the “blank area” that may host dangerous gas pockets. Gas seepage in tree-type fractures was analyzed, and gas seepage tests after tree-type fracturing showed that permeability was greatly enhanced. The equipment developed for tree-type fracturing was tested in the Fengchun underground coal mine in China. After implementing tree-type fracturing, the gas extraction rate was around 2.3 times greater than that for traditional fracturing, and the extraction rate remained high for a long time during a 30-day test. This shortened the gas drainage time and improved gas extraction efficiency.

  2. SÍNTESIS, CARACTERIZACIÓN ESTRUCTURAL Y PROPIEDADES MAGNÉTICAS DE COMPUESTOS SEMICONDUCTORES DEL TIPO Dy (x In (1-x Sb ISYNTHESIS, STRUCTURAL CHARACTERIZATION AND MAGNETIC PROPERTIES OF SEMICONDUCTOR COMPOUNDS OF TYPE Dy x In (1-x S

    Directory of Open Access Journals (Sweden)

    Euclides J. Velazco Rivero

    2018-04-01

    Full Text Available Semiconductor compounds of molecular formula of type DyxIn (1-x Sb (x = 0,02; 0,03; 0,04; 0,05; 0,06 y 0,07 were synthesized by means of direct interaction of the elements under heat treatment to 550°C during 11 days in vacuum sealed quartz ampoules. The analyses by X-rays diffraction showed that the compounds with x = 0,02; 0,03 y 0,04 presented pure phases of InSb doped with Dy without presence of alternate phases of DySb. These compounds, analyzed by scanning electronic microscopy – SEM, showed particles with a variety of shapes and sizes each one. Whereas the magnetic susceptibility measurements showed that those doped compounds, in spite of their paramagnetic behavior, the predominant magnetic interaction is ferromagnetic due to their positive Curie temperature (θ

  3. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  4. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  5. Synthesis Methods, Microscopy Characterization and Device Integration of Nanoscale Metal Oxide Semiconductors for Gas Sensing in Aerospace Applications

    Science.gov (United States)

    VanderWal, Randy L.; Berger, Gordon M.; Kulis, Michael J.; Hunter, Gary W.; Xu, Jennifer C.; Evans, Laura J.

    2009-01-01

    A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. Both nanostructures possess a one-dimensional morphology. Different synthesis methods are used to produce these materials: thermal evaporation-condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed. Practical issues associated with harvesting, purification, and integration of these materials into sensing devices are detailed. For comparison to the nascent form, these sensing materials are surface coated with Pd and Pt nanoparticles. Gas sensing tests, with respect to H2, are conducted at ambient and elevated temperatures. Comparative normalized responses and time constants for the catalyst and noncatalyst systems provide a basis for identification of the superior metal-oxide nanostructure and catalyst combination. With temperature-dependent data, Arrhenius analyses are made to determine an activation energy for the catalyst-assisted systems.

  6. Anomalous output characteristic shift for the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer

    International Nuclear Information System (INIS)

    Liu, Siyang; Zhang, Chunwei; Sun, Weifeng; Su, Wei; Wang, Shaorong; Ma, Shulang; Huang, Yu

    2014-01-01

    Anomalous output characteristic shift of the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer is investigated. It shows that the linear drain current has obvious decrease when the output characteristic of fresh device is measured for two consecutive times. The charge pumping experiments demonstrate that the decrease is not from hot-carrier degradation. The reduction of cross section area for the current flowing, which results from the squeezing of the depletion region surrounding the P-top layer, is responsible for the shift. Consequently, the current capability of this special device should be evaluated by the second measured output characteristic

  7. Anomalous output characteristic shift for the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Siyang; Zhang, Chunwei; Sun, Weifeng, E-mail: swffrog@seu.edu.cn [National ASIC System Engineering Research Center, Southeast University, Nanjing 210096 (China); Su, Wei; Wang, Shaorong; Ma, Shulang; Huang, Yu [CSMC Technologies Corporation, Wuxi 214061 (China)

    2014-04-14

    Anomalous output characteristic shift of the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer is investigated. It shows that the linear drain current has obvious decrease when the output characteristic of fresh device is measured for two consecutive times. The charge pumping experiments demonstrate that the decrease is not from hot-carrier degradation. The reduction of cross section area for the current flowing, which results from the squeezing of the depletion region surrounding the P-top layer, is responsible for the shift. Consequently, the current capability of this special device should be evaluated by the second measured output characteristic.

  8. Pyrolysis-gas chromatographic method for kerogen typing

    Energy Technology Data Exchange (ETDEWEB)

    Larter, S.R.; Douglas, A.G.

    1980-01-01

    The classification of kerogens according to their type and rank is important for the definition of any kerogen assemblage. Whereas optical methods of rank determination are well known, vitrinite reflectance and spore coloration being the most widely accepted chemical methods for typing kerogens are less developed. In this work we show that pyrograms, produced by pyrolyzing microgram quantities of solvent-extracted kerogens, enable not only their characterization in terms of a chromatographic fingerprint but also the production of a numerical type index determined as the ratio of m(+p)-xylene/n-octene (oct-1-ene) in the pyrogram. This index appears to be a close function of kerogen type. Type 3 kerogens (Tissot et al., 1974), including vitrinite, provide a high type index and have pyrolysates dominated by aromatic and phenolic compounds whereas type 1 kerogens provide an aliphatic-rich pyrolysate and consequently a low type index. The type index described here correlates well with microscopic and elemental analysis data and the pyrogram fingerprint provides an additional level of characterization not attainable with other current typing techniques.

  9. Flow and separation in gas centrifuge with Beams type circulation

    International Nuclear Information System (INIS)

    Ajsen, Eh.M.; Borisevich, V.D.; Levin, E.V.

    1992-01-01

    Structure of the secondary circulation flows in the working chamber of gas centrifuge for uranium isotope separation is studied using the numerical methods. Influence of the circulation thermal component on the centrifuge efficiency is analyzed. The contribution of useful component concentration difference of binary isotope mixture in feeding flows to the centrifuge efficiency is determined. Dependence of concentration optimal difference, whereby the maximum efficiency is achieved, on temperature distribution on the rotor side wall is found

  10. Three types of gas hydrate reservoirs in the Gulf of Mexico identified in LWD data

    Science.gov (United States)

    Lee, Myung Woong; Collett, Timothy S.

    2011-01-01

    High quality logging-while-drilling (LWD) well logs were acquired in seven wells drilled during the Gulf of Mexico Gas Hydrate Joint Industry Project Leg II in the spring of 2009. These data help to identify three distinct types of gas hydrate reservoirs: isotropic reservoirs in sands, vertical fractured reservoirs in shale, and horizontally layered reservoirs in silty shale. In general, most gas hydratebearing sand reservoirs exhibit isotropic elastic velocities and formation resistivities, and gas hydrate saturations estimated from the P-wave velocity agree well with those from the resistivity. However, in highly gas hydrate-saturated sands, resistivity-derived gas hydrate-saturation estimates appear to be systematically higher by about 5% over those estimated by P-wave velocity, possibly because of the uncertainty associated with the consolidation state of gas hydrate-bearing sands. Small quantities of gas hydrate were observed in vertical fractures in shale. These occurrences are characterized by high formation resistivities with P-wave velocities close to those of water-saturated sediment. Because the formation factor varies significantly with respect to the gas hydrate saturation for vertical fractures at low saturations, an isotropic analysis of formation factor highly overestimates the gas hydrate saturation. Small quantities of gas hydrate in horizontal layers in shale are characterized by moderate increase in P-wave velocities and formation resistivities and either measurement can be used to estimate gas hydrate saturations.

  11. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  12. Gas/liquid separator for BWR type reactor

    International Nuclear Information System (INIS)

    Soma, Naoshi; Akimoto, Seiichi; Yokoyama, Iwao.

    1993-01-01

    A two phase gas/liquid flow generated at a heating portion of a nuclear reactor is swirled by inlet vanes. The phase gas/liquid flow uprises as a vortex flow in a vortex cylinder, and a liquid phase of a high density gathers at the outer circumference of the vortex cylinder. The liquid phase gathered at the outer circumference is collected at the inlet of a discharge flow channel which protrude into the vortex cylinder and in a three-step structure, and introduced into a recycling liquid phase passing through the discharge flow channel for liquid phase. There is provided a structure that separated liquid collected at the lowermost state in the inlet of the three-step discharge flow channel inlet descends in the discharge flow channel, then uprises in an uprising flow channel and is introduced into the recycling liquid phase by way of a discharge flow channel exit. The height of the discharge flow channel exit is determined equal to that of a liquid level of the recycling liquid phase during rated operation of the reactor. Accordingly, even in a case where the liquid level in the recycling liquid phase is lowered, the liquid level of the uprising flow channel is kept equal to that during rated operation. (I.N.)

  13. Are greenhouse gas emissions from international shipping a type of marine pollution?

    Science.gov (United States)

    Shi, Yubing

    2016-12-15

    Whether greenhouse gas emissions from international shipping are a type of marine pollution is a controversial issue and is currently open to debate. This article examines the current treaty definitions of marine pollution, and applies them to greenhouse gas emissions from ships. Based on the legal analysis of treaty definitions and relevant international and national regulation on this issue, this article asserts that greenhouse gas emissions from international shipping are a type of 'conditional' marine pollution. Copyright © 2016 Elsevier Ltd. All rights reserved.

  14. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  15. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  16. Are greenhouse gas emissions from international shipping a type of marine pollution?

    International Nuclear Information System (INIS)

    Shi, Yubing

    2016-01-01

    Whether greenhouse gas emissions from international shipping are a type of marine pollution is a controversial issue and is currently open to debate. This article examines the current treaty definitions of marine pollution, and applies them to greenhouse gas emissions from ships. Based on the legal analysis of treaty definitions and relevant international and national regulation on this issue, this article asserts that greenhouse gas emissions from international shipping are a type of ‘conditional’ marine pollution. - Highlights: • Greenhouse gas (GHG) emissions from international shipping are a type of ‘conditional’ marine pollution. • Shipping CO 2 may be treated as marine pollution under the 1972 London Dumping Convention. • Countries have adopted different legislation concerning the legal nature of GHG emissions from ships. • Regulating CO 2 emissions from ships as marine pollution may expedite global GHG emissions reduction.

  17. Semiconductor detectors in nuclear and particle physics

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1992-01-01

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups: Classical semiconductor diode detectors and semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported

  18. Semiconductor detectors in nuclear and particle physics

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1995-01-01

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups; (i) classical semiconductor diode detectors and (ii) semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported. copyright 1995 American Institute of Physics

  19. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  20. Life-cycle energy and greenhouse gas emission impacts of different corn ethanol plant types

    International Nuclear Information System (INIS)

    Wang, Michael; Wu, May; Hong Huo

    2007-01-01

    Since the United States began a programme to develop ethanol as a transportation fuel, its use has increased from 175 million gallons in 1980 to 4.9 billion gallons in 2006. Virtually all of the ethanol used for transportation has been produced from corn. During the period of fuel ethanol growth, corn farming productivity has increased dramatically, and energy use in ethanol plants has been reduced by almost by half. The majority of corn ethanol plants are powered by natural gas. However, as natural gas prices have skyrocketed over the last several years, efforts have been made to further reduce the energy used in ethanol plants or to switch from natural gas to other fuels, such as coal and wood chips. In this paper, we examine nine corn ethanol plant types-categorized according to the type of process fuels employed, use of combined heat and power, and production of wet distiller grains and solubles. We found that these ethanol plant types can have distinctly different energy and greenhouse gas emission effects on a full fuel-cycle basis. In particular, greenhouse gas emission impacts can vary significantly-from a 3% increase if coal is the process fuel to a 52% reduction if wood chips are used. Our results show that, in order to achieve energy and greenhouse gas emission benefits, researchers need to closely examine and differentiate among the types of plants used to produce corn ethanol so that corn ethanol production would move towards a more sustainable path

  1. Gas-rich dwarfs and accretion phenomena in early-type galaxies

    Science.gov (United States)

    Silk, J.; Norman, C.

    1979-01-01

    An analysis is presented of the combined effects of cloud accretion and galactic winds and coronae. An accretion model is developed wherein gas-rich dwarf galaxies are accreted into galactic halos, which provides an adequate source of H I to account for observations of neutral gas in early-type galaxies. Accretion is found to fuel the wind, thereby regulating the accretion flow and yielding a time-dependent model for star formation, enrichment, and nuclear activity. The permissible parameter range for intergalactic gas clouds and galaxy groups is discussed, along with the frequency of gas-rich dwarfs and their large ratios of gas mass to luminosity. Also considered is the occurrence of gas stripping and the consequent formation of dwarf spheroidal systems that remain in the halo, and gas clouds that dissipate and suffer further infall. A cosmological implication of the model is that, because the characteristic time scale of a gas-rich dwarf galaxy to be accreted and lose its gas is comparable to a Hubble time, there may have been a far more extensive primordial distribution of such systems at earlier epochs.

  2. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  3. Feasibility of Ericsson type isothermal expansion/compression gas turbine cycle for nuclear energy use

    International Nuclear Information System (INIS)

    Shimizu, Akihiko

    2007-01-01

    A gas turbine with potential demand for the next generation nuclear energy use such as HTGR power plants, a gas cooled FBR, a gas cooled nuclear fusion reactor uses helium as working gas and with a closed cycle. Materials constituting a cycle must be set lower than allowable temperature in terms of mechanical strength and radioactivity containment performance and so expansion inlet temperature is remarkably limited. For thermal efficiency improvement, isothermal expansion/isothermal compression Ericsson type gas turbine cycle should be developed using wet surface of an expansion/compressor casing and a duct between stators without depending on an outside heat exchanger performing multistage re-heat/multistage intermediate cooling. Feasibility of an Ericsson cycle in comparison with a Brayton cycle and multi-stage compression/expansion cycle was studied and technologies to be developed were clarified. (author)

  4. Elucidation of the structure-property relationship of p-type organic semiconductors through rapid library construction via a one-pot, Suzuki-Miyaura coupling reaction.

    Science.gov (United States)

    Fuse, Shinichiro; Matsumura, Keisuke; Wakamiya, Atsushi; Masui, Hisashi; Tanaka, Hiroshi; Yoshikawa, Susumu; Takahashi, Takashi

    2014-09-08

    The elucidation of the structure-property relationship is an important issue in the development of organic electronics. Combinatorial synthesis and the evaluation of systematically modified compounds is a powerful tool in the work of elucidating structure-property relationships. In this manuscript, D-π-A structure, 32 p-type organic semiconductors were rapidly synthesized via a one-pot, Suzuki-Miyaura coupling with subsequent Knoevenagel condensation. Evaluation of the solubility and photovoltaic properties of the prepared compounds revealed that the measured solubility was strongly correlated with the solubility parameter (SP), as reported by Fedors. In addition, the SPs were correlated with the Jsc of thin-film organic solar cells prepared using synthesized compounds. Among the evaluated photovoltaic properties of the solar cells, Jsc and Voc had strong correlations with the photoconversion efficiency (PCE).

  5. New types of contracts. Part 2. The natural gas spot market. Many options, many constraints

    International Nuclear Information System (INIS)

    Van Gelder, J.W.

    1999-01-01

    In two articles, new types of contracts such as swaps, futures and spot contracts are surveyed. How far has the Dutch liberalised market developed in this field? This article focuses on the spot market for gas, whilst in the previous issue attention was paid to the electricity market. Bilateral spot contracts have been used in the Netherlands for years and years. The only gas exchange in Europe, the International Petroleum Exchange (IPE), was established in London, UK, at the end of 1994. This is a screen exchange, just like the APX (Amsterdam Power Exchange), where natural gas traders can enter into various types of contracts. An organised gas exchange has as yet not been established on the continent. The most suitable candidate is Zeebrugge in Belgium, where all the large players are represented. To do so, however, more transparency is required on the transmission market so that supply and demand can find each other quickly at standard conditions

  6. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  7. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  8. Method of developing all-optical trinary JK, D-type, and T-type flip-flops using semiconductor optical amplifiers.

    Science.gov (United States)

    Garai, Sisir Kumar

    2012-04-10

    To meet the demand of very fast and agile optical networks, the optical processors in a network system should have a very fast execution rate, large information handling, and large information storage capacities. Multivalued logic operations and multistate optical flip-flops are the basic building blocks for such fast running optical computing and data processing systems. In the past two decades, many methods of implementing all-optical flip-flops have been proposed. Most of these suffer from speed limitations because of the low switching response of active devices. The frequency encoding technique has been used because of its many advantages. It can preserve its identity throughout data communication irrespective of loss of light energy due to reflection, refraction, attenuation, etc. The action of polarization-rotation-based very fast switching of semiconductor optical amplifiers increases processing speed. At the same time, tristate optical flip-flops increase information handling capacity.

  9. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  10. Amphoteric oxide semiconductors for energy conversion devices: a tutorial review.

    Science.gov (United States)

    Singh, Kalpana; Nowotny, Janusz; Thangadurai, Venkataraman

    2013-03-07

    In this tutorial review, we discuss the defect chemistry of selected amphoteric oxide semiconductors in conjunction with their significant impact on the development of renewable and sustainable solid state energy conversion devices. The effect of electronic defect disorders in semiconductors appears to control the overall performance of several solid-state ionic devices that include oxide ion conducting solid oxide fuel cells (O-SOFCs), proton conducting solid oxide fuel cells (H-SOFCs), batteries, solar cells, and chemical (gas) sensors. Thus, the present study aims to assess the advances made in typical n- and p-type metal oxide semiconductors with respect to their use in ionic devices. The present paper briefly outlines the key challenges in the development of n- and p-type materials for various applications and also tries to present the state-of-the-art of defect disorders in technologically related semiconductors such as TiO(2), and perovskite-like and fluorite-type structure metal oxides.

  11. Electrical tuning of the band alignment and magnetoconductance in an n-type ferromagnetic semiconductor (In,Fe)As-based spin-Esaki diode

    Science.gov (United States)

    Anh, Le Duc; Hai, Pham Nam; Tanaka, Masaaki

    2018-03-01

    We report a strong bias dependence of the magnetoconductance (MC) of a spin-Esaki diode composed of n+-type ferromagnetic semiconductor (FMS) (In,Fe)As and p+-type Be doped InAs grown on a p+-InAs (001) substrate by molecular beam epitaxy. When the bias voltage V is increased above 450 mV in the forward bias, we found that the MC, measured at 3.5 K under a magnetic field H of 1 T in the in-plane [110] direction, changes its sign from positive to negative and its magnitude rises rapidly from 0.5% at V fluid model, we explain both the magnitude and the anisotropy of the MC based on the evolution of the spin-Esaki diode's band profile with V. This analysis provides insights into the density of states and spin-polarization of the conduction band and the Fe-related impurity band in n-type FMS (In,Fe)As.

  12. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Science.gov (United States)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  13. Recent Developments in 2D Nanomaterials for Chemiresistive-Type Gas Sensors

    Science.gov (United States)

    Choi, Seon-Jin; Kim, Il-Doo

    2018-03-01

    Two-dimensional (2D) nanostructures are gaining tremendous interests due to the fascinating physical, chemical, electrical, and optical properties. Recent advances in 2D nanomaterials synthesis have contributed to optimization of various parameters such as physical dimension and chemical structure for specific applications. In particular, development of high performance gas sensors is gaining vast importance for real-time and on-site environmental monitoring by detection of hazardous chemical species. In this review, we comprehensively report recent achievements of 2D nanostructured materials for chemiresistive-type gas sensors. Firstly, the basic sensing mechanism is described based on charge transfer behavior between gas species and 2D nanomaterials. Secondly, diverse synthesis strategies and characteristic gas sensing properties of 2D nanostructures such as graphene, metal oxides, transition metal dichalcogenides (TMDs), metal organic frameworks (MOFs), phosphorus, and MXenes are presented. In addition, recent trends in synthesis of 2D heterostructures by integrating two different types of 2D nanomaterials and their gas sensing properties are discussed. Finally, this review provides perspectives and future research directions for gas sensor technology using various 2D nanomaterials.

  14. Recent Developments in 2D Nanomaterials for Chemiresistive-Type Gas Sensors

    Science.gov (United States)

    Choi, Seon-Jin; Kim, Il-Doo

    2018-05-01

    Two-dimensional (2D) nanostructures are gaining tremendous interests due to the fascinating physical, chemical, electrical, and optical properties. Recent advances in 2D nanomaterials synthesis have contributed to optimization of various parameters such as physical dimension and chemical structure for specific applications. In particular, development of high performance gas sensors is gaining vast importance for real-time and on-site environmental monitoring by detection of hazardous chemical species. In this review, we comprehensively report recent achievements of 2D nanostructured materials for chemiresistive-type gas sensors. Firstly, the basic sensing mechanism is described based on charge transfer behavior between gas species and 2D nanomaterials. Secondly, diverse synthesis strategies and characteristic gas sensing properties of 2D nanostructures such as graphene, metal oxides, transition metal dichalcogenides (TMDs), metal organic frameworks (MOFs), phosphorus, and MXenes are presented. In addition, recent trends in synthesis of 2D heterostructures by integrating two different types of 2D nanomaterials and their gas sensing properties are discussed. Finally, this review provides perspectives and future research directions for gas sensor technology using various 2D nanomaterials.

  15. Wake fields in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1994-05-01

    It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

  16. Gas-rich dwarfs and accretion phenomena in early-type galaxies

    International Nuclear Information System (INIS)

    Silk, J.; Norman, C.

    1979-01-01

    Recent constraints on intergalactic H I clouds suggest that allowable accretion rates by several luminous early-type galaxies are too low to account for their observed H I content. We have therefore developed an alternative model, wherein gas-rich dwarf galaxies are accreted into galactic halos. This process is significant in groups of galaxies only when a sufficiently high density of gas-rich dwarfs (approx.30 Mpc -3 ) is present. The dwarf galaxy gas content plays a crucial role in enabling the galaxy to be trapped in the halo by interaction with a galactic wind or extensive gaseous corona. Gas stripping occurs, resulting in the formation of dwarf spheroidal systems that populate the outer halos of massive galaxies and in the injection of a system of clouds into the halo. If the clouds are initially confined by the pressure of the ambient halo medium, dissipation and continuing infall enable the clouds to accrete into the central regions of galaxies before becoming gravitationally unstable and presumably forming stars. Consequences of this scenario include the production of a radial abundance gradient and infall of adequate amounts of neutral gas to account for the observations of H I in early-type galaxies. This gas accretion rate is also sufficient to feed active nuclei and radio sources. An important cosmological implication of our model is that, because the characteristic time scale of a gas-rich dwarf galaxy to be accreted and lose its gas is comparable to a Hubble time, there many have been a far more extensive primordial distribution of such systems at earlier epochs. This implies that accretion rates were greatly enhanced at relatively recent epochs (z> or approx. =0.5) and could account both for the rapid cosmological evolution inferred for radio galaxies and quasars, and for the observed frequency of occurrence of quasar absorption-line systems

  17. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  18. Three-component particle image velocimetry in a generic can-type gas turbine combustor

    CSIR Research Space (South Africa)

    Meyers, Bronwyn C

    2012-11-01

    Full Text Available -1 Proceedings of the Institution of Mechanical Engineers, Part A: Journal of Power and Energy November 2012/ Vol. 226(7) Three-componentParticle Image Velocimetry in a Generic Can-type Gas Turbine Combustor B C Meyers 1, 2* , G C Snedden 1 , J P...

  19. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  20. High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor

    KAUST Repository

    Li, Feng

    2016-12-13

    A solution-processed near-infrared (NIR) organic phototransistor (OPT) based on n-type organic small molecular material BODIPY-BF2 has been successfully fabricated. Its unprecedented performance, as well as its easy fabrication and good stability, mark this BODIPY-BF2 based OPT device as a very promising candidate for optoelectronic applications in the NIR regime.

  1. High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor

    KAUST Repository

    Li, Feng; Chen, Yin; Ma, Chun; Buttner, Ulrich; Leo, Karl; Wu, Tao

    2016-01-01

    A solution-processed near-infrared (NIR) organic phototransistor (OPT) based on n-type organic small molecular material BODIPY-BF2 has been successfully fabricated. Its unprecedented performance, as well as its easy fabrication and good stability, mark this BODIPY-BF2 based OPT device as a very promising candidate for optoelectronic applications in the NIR regime.

  2. Semiconductor X-ray spectrometers

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1978-02-01

    An outline is given of recent developments in particle and photon induced x-ray fluorescence (XRF) analysis. Following a brief description of the basic mechanism of semiconductor detector operation a comparison is made between semiconductor detectors, scintillators and gas filled proportional devices. Detector fabrication and cryostat design are described in more detail and the effects of various device parameters on system performance, such as energy resolution, count rate capability, efficiency, microphony, etc. are discussed. The main applications of these detectors in x-ray fluorescence analysis, electron microprobe analysis, medical and pollution studies are reviewed

  3. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  4. The ATLAS(3D) project : XIX. The hot gas content of early-type galaxies: fast versus slow rotators

    NARCIS (Netherlands)

    Sarzi, Marc; Alatalo, Katherine; Blitz, Leo; Bois, Maxime; Bournaud, Frederic; Bureau, Martin; Cappellari, Michele; Crocker, Alison; Davies, Roger L.; Davis, Timothy A.; de Zeeuw, P. T.; Duc, Pierre-Alain; Emsellem, Eric; Khochfar, Sadegh; Krajnovic, Davor; Kuntschner, Harald; Lablanche, Pierre-Yves; McDermid, Richard M.; Morganti, Raffaella; Naab, Thorsten; Oosterloo, Tom; Scott, Nicholas; Serra, Paolo; Young, Lisa M.; Weijmans, Anne-Marie

    2013-01-01

    For early-type galaxies, the ability to sustain a corona of hot, X-ray-emitting gas could have played a key role in quenching their star formation history. A halo of hot gas may act as an effective shield against the acquisition of cold gas and can quickly absorb stellar mass loss material. Yet,

  5. The ATLAS3D project - XIX. The hot gas content of early-type galaxies: fast versus slow rotators

    NARCIS (Netherlands)

    Sarzi, Marc; Alatalo, Katherine; Blitz, Leo; Bois, Maxime; Bournaud, Frédéric; Bureau, Martin; Cappellari, Michele; Crocker, Alison; Davies, Roger L.; Davis, Timothy A.; de Zeeuw, P. T.; Duc, Pierre-Alain; Emsellem, Eric; Khochfar, Sadegh; Krajnović, Davor; Kuntschner, Harald; Lablanche, Pierre-Yves; McDermid, Richard M.; Morganti, Raffaella; Naab, Thorsten; Oosterloo, Tom; Scott, Nicholas; Serra, Paolo; Young, Lisa M.; Weijmans, Anne-Marie

    For early-type galaxies, the ability to sustain a corona of hot, X-ray-emitting gas could have played a key role in quenching their star formation history. A halo of hot gas may act as an effective shield against the acquisition of cold gas and can quickly absorb stellar mass loss material. Yet,

  6. Gas Condensates onto a LHC Type Cryogenic Vacuum System Subjected to Electron Cloud

    CERN Multimedia

    Baglin, V

    2004-01-01

    In the Large Hadron Collider (LHC), the gas desorbed via photon stimulated molecular desorption or electron stimulated molecular desorption will be physisorbed onto the beam screen held between 5 and 20 K. Studies of the effects of the electron cloud onto a LHC type cryogenic vacuum chamber have been done with the cold bore experiment (COLDEX) installed in the CERN Super Proton Synchrotron (SPS). Experiments performed with gas condensates such as H2, H2O, CO and CO2 are described. Implications for the LHC design and operation are discussed.

  7. Theory of tamm surface states on the boundary between Hgsub(1-x)Cdsub(x)Te type semimetal and narrow-gap semiconductor

    International Nuclear Information System (INIS)

    Mekhtiyev, M.A.; Kalina, V.A.

    1980-01-01

    The conditions of appearance of tamm surface states and their energy spectrum on the boundary of semimetals and narrow-gap semiconductors are considered. By the Green function method the equation for surface state energy is obtained. The solution of the latter is analyzed in particular cases when energy of heavy hole zones of the semimetal and semiconductor is the same and when the heavy hole gap of the semiconductor is shifted down relatively to the semimetal of the same name gap as well as accurate computer calculation. It is shown that neither in parabolic limits, nor in cases of a strongly unparabolic semiconductor (semimetal) and a parabolic semimetal (semiconductor) the equation obtained has no solutions at small quasipulse values i.e. there are no surface states. In the case when the heavy hole zone of a semiconductor is shifted down for the value of the order of narrow-gap semiconductor the effective mass of surface states turns to be twice heavier than that of the semimetal volumetrical electrons [ru

  8. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Diagnosis of the gastric cancer by radionuclides and their labels, using catheter-type semiconductor radiation detector (CASRAD)

    Energy Technology Data Exchange (ETDEWEB)

    Sassa, R [Asahi Life Foundation, Tokyo (Japan). Inst. for Adult Diseases; Iio, M; Sugita, T

    1980-08-01

    A new method of differential diagnosis of gastric cancer was reported. After intravenous /sup 32/P administration, lesions were counted by a small catheter-type radiation detector system under gastrofiberscopic direct vision control. Optimum counting time was examined in man and it was found to be between 20 to 50 hours after intravenous administration of /sup 32/P. With the currently available technology of miniature detectors, the ..beta..-emitting carcinophilic agent was still found to be the agent of choice to this end, since ..gamma..-emitting carcinophilic agents cannot provide data originated only from the gastric mucosa in question.

  11. Electrical control of optical orientation of neutral and negatively charged excitons in an n -type semiconductor quantum well

    Science.gov (United States)

    Dzhioev, R. I.; Korenev, V. L.; Lazarev, M. V.; Sapega, V. F.; Gammon, D.; Bracker, A. S.

    2007-01-01

    We report electric field induced increase of spin orientation of negatively charged excitons (trions) localized in n -type GaAs/AlGaAs quantum well. Under resonant excitation of free neutral heavy-hole excitons, the polarization of trions increases dramatically with electrical injection of electrons. The polarization enhancement correlates strongly with trion/exciton luminescence intensity ratio. This effect results from a very efficient trapping of free neutral excitons by the quantum well interfacial fluctuations (“natural” quantum dots) containing resident electrons.

  12. [CH(3)(CH(2))(11)NH(3)]SnI(3): a hybrid semiconductor with MoO(3)-type tin(II) iodide layers.

    Science.gov (United States)

    Xu, Zhengtao; Mitzi, David B

    2003-10-20

    The organic-inorganic hybrid [CH(3)(CH(2))(11)NH(3)]SnI(3) presents a lamellar structure with a Sn-I framework isotypic to that of MoO(3). The SnI(3)(-) layer consists of edge and corner-sharing SnI(6) octahedra in which one of the six Sn-I bonds is distinctly elongated (e.g., 3.62 A), indicating lone-pair stereoactivity for the Sn(II) atom. The overall electronic character remains comparable with that of the well-studied SnI(4)(2)(-)-based perovskite semiconductors, such as [CH(3)(CH(2))(11)NH(3)](2)SnI(4), with a red-shifted and broadened exciton peak associated with the band gap, apparently due to the increased dimensionality of the Sn-I framework. The title compound offers, aside from the hybrid perovskites, a new type of solution-processable Sn-I network for potential applications in semiconductive devices.

  13. Multifunctional uranyl hybrid materials: structural diversities as a function of pH, luminescence with potential nitrobenzene sensing, and photoelectric behavior as p-type semiconductors.

    Science.gov (United States)

    Song, Jian; Gao, Xue; Wang, Zhi-Nan; Li, Cheng-Ren; Xu, Qi; Bai, Feng-Ying; Shi, Zhong-Feng; Xing, Yong-Heng

    2015-09-21

    A series of uranyl-organic frameworks (UOFs), {[(UO2)2(H2TTHA)(H2O)]·4,4'-bipy·2H2O}n (1), {[(UO2)3(TTHA)(H2O)3]}n (2), and {[(UO2)5(TTHA) (HTTHA)(H2O)3]·H3O}n (3), have been obtained by the hydrothermal reaction of uranyl acetate with a flexible hexapodal ligand (1,3,5-triazine-2,4,6-triamine hexaacetic acid, H6TTHA). These compounds exhibited three distinct 3D self-assembly architectures as a function of pH by single-crystal structural analysis, although the used ligand was the same in each reaction. Surprisingly, all of the coordination modes of the H6TTHA ligand in this work are first discovered. Furthermore, the photoluminescent results showed that these compounds displayed high-sensitivity luminescent sensing functions for nitrobenzene. Additionally, the surface photovoltage spectroscopy and electric-field-induced surface photovoltage spectroscopy showed that compounds 1-3 could behave as p-type semiconductors.

  14. Thermal Gradient During Vacuum-Deposition Dramatically Enhances Charge Transport in Organic Semiconductors: Toward High-Performance N-Type Organic Field-Effect Transistors.

    Science.gov (United States)

    Kim, Joo-Hyun; Han, Singu; Jeong, Heejeong; Jang, Hayeong; Baek, Seolhee; Hu, Junbeom; Lee, Myungkyun; Choi, Byungwoo; Lee, Hwa Sung

    2017-03-22

    A thermal gradient distribution was applied to a substrate during the growth of a vacuum-deposited n-type organic semiconductor (OSC) film prepared from N,N'-bis(2-ethylhexyl)-1,7-dicyanoperylene-3,4:9,10-bis(dicarboxyimide) (PDI-CN2), and the electrical performances of the films deployed in organic field-effect transistors (OFETs) were characterized. The temperature gradient at the surface was controlled by tilting the substrate, which varied the temperature one-dimensionally between the heated bottom substrate and the cooled upper substrate. The vacuum-deposited OSC molecules diffused and rearranged on the surface according to the substrate temperature gradient, producing directional crystalline and grain structures in the PDI-CN2 film. The morphological and crystalline structures of the PDI-CN2 thin films grown under a vertical temperature gradient were dramatically enhanced, comparing with the structures obtained from either uniformly heated films or films prepared under a horizontally applied temperature gradient. The field effect mobilities of the PDI-CN2-FETs prepared using the vertically applied temperature gradient were as high as 0.59 cm 2 V -1 s -1 , more than a factor of 2 higher than the mobility of 0.25 cm 2 V -1 s -1 submitted to conventional thermal annealing and the mobility of 0.29 cm 2 V -1 s -1 from the horizontally applied temperature gradient.

  15. The diagnosis of the gastric cancer using catheter-type semiconductor radiation detector. Comparison of diagnostic values of. beta. -emitting radionuclide label with. gamma. -emitting label

    Energy Technology Data Exchange (ETDEWEB)

    Sassa, R; Iwase, T [Asahi Life Foundation, Tokyo (Japan). Inst. for Adult Diseases; Sugita, T; Iio, M

    1975-06-01

    The diagnostic usefulness of /sup 32/P-phosphate for human gastric cancer, using a catheter-type semiconductor radiation detector (CASRAD) combined with gastrofiberscope technique, has already been reported by the authors. They have in addition used sup(99m)Tc-bleomycin, sup(99m)Tc-tetracycline in the diagnosis of experimental rabbit gastric cancer, too. In the present study, further refinement of the technique for the ..beta..-ray labeled substance (/sup 32/P-phosphate) for detection of the gastric cancer was compared with that of ..gamma..-ray labeled substance (sup(99m)Tc-tetracycline). A more correct diagnosis of the gastric cancer by in vivo measurement of beta activity could be obtained, when the collimater, made of stainless steel, was attached to the top of the detector. In this way contribution to the count from the adjacent tissues or organs could be eliminated. They were unable to produce an effective and useful collimater for ..gamma..-ray labeled substance which could to be used safely in vivo. Because of the unsatisfactory collimater, radioactivities of the adjacent organs caused on increase in the radioactivity of the background. Therefore inspite of the recent introduction of various sup(99m)Tc-tumor agents, these labels were not applicable to the CASRAD method. For such a small detector system, ..beta..-labels, represented by /sup 32/P-phosphate, was still prefererable to ..gamma..-labels.

  16. Laser-induced removal of a dye C.I. Acid Red 87 using n-type WO{sub 3} semiconductor catalyst

    Energy Technology Data Exchange (ETDEWEB)

    Qamar, M. [Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, KFUPM Box 741, Dhahran 31261 (Saudi Arabia); Gondal, M.A., E-mail: magondal@kfupm.edu.sa [Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, KFUPM Box 741, Dhahran 31261 (Saudi Arabia); Laser Research Laboratory, Physics Department, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Hayat, K. [Chemistry Department, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Yamani, Z.H. [Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, KFUPM Box 741, Dhahran 31261 (Saudi Arabia); Laser Research Laboratory, Physics Department, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Al-Hooshani, K. [Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, KFUPM Box 741, Dhahran 31261 (Saudi Arabia); Chemistry Department, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia)

    2009-10-30

    Water contamination by organic substances such as dyes is of great concern worldwide due to their utilization in many industrial processes and environmental concerns. To cater the needs for waste water treatment polluted with organic dyes, laser-induced photocatalytic process was investigated for removal of a dye derivative namely Acid Red 87 using n-type WO{sub 3} semiconductor catalyst. The degradation was investigated in aqueous suspensions of tungsten oxide under different experimental conditions using laser instead of conventional UV lamp as an irradiation source. The degradation process was monitored by measuring the change in dye concentration as a function of laser irradiation time by employing UV spectroscopic analysis. The degradation of dye was studied by varying different parameters such as laser energy, reaction pH, substrate concentration, catalyst concentration, and in the presence of electron acceptors such as hydrogen peroxide (H{sub 2}O{sub 2}), and potassium bromate (KBrO{sub 3}). The degradation rates were found to be strongly dependent on all the above-mentioned parameters. Our experimental results revealed that the dye degradation process was very fast (within few minutes) under laser irradiation as compared to conventional setups using broad spectral lamps (hours or days) and this laser-induced photocatalytic degradation method could be an effective means to eliminate the pollutants present in liquid phase. The experience gained through this study could be beneficial for treatment of waste water contaminated with organic dyes and other organic pollutants.

  17. Novel Dry-Type Glucose Sensor Based on a Metal-Oxide-Semiconductor Capacitor Structure with Horseradish Peroxidase + Glucose Oxidase Catalyzing Layer

    Science.gov (United States)

    Lin, Jing-Jenn; Wu, You-Lin; Hsu, Po-Yen

    2007-10-01

    In this paper, we present a novel dry-type glucose sensor based on a metal-oxide-semiconductor capacitor (MOSC) structure using SiO2 as a gate dielectric in conjunction with a horseradish peroxidase (HRP) + glucose oxidase (GOD) catalyzing layer. The tested glucose solution was dropped directly onto the window opened on the SiO2 layer, with a coating of HRP + GOD catalyzing layer on top of the gate dielectric. From the capacitance-voltage (C-V) characteristics of the sensor, we found that the glucose solution can induce an inversion layer on the silicon surface causing a gate leakage current flowing along the SiO2 surface. The gate current changes Δ I before and after the drop of glucose solution exhibits a near-linear relationship with increasing glucose concentration. The Δ I sensitivity is about 1.76 nA cm-2 M-1, and the current is quite stable 20 min after the drop of the glucose solution is tested.

  18. Physical effects of DCNQI derivatives doping as an N type organic semiconductor in organic photovoltaic cell performance.

    Science.gov (United States)

    Lee, Joo Hyung; Oh, Se Young

    2014-08-01

    In the previous work, we have reported that organic photovoltaic (OPV) cells using DMDCNQI as an n-type second dopant material showed a high power conversion efficiency (PCE). In the present work, we have synthesized a novel DHDCNQI with long alkyl chains to improve the compatibility between the DHDCNQI dopant molecule and host P3HT polymer. We have fabricated OPV cells consisting of ITO/PEDOT:PSS/P3HT:PCBM:DHDCNQI/Al. We have investigated the characteristics of theses OPV cells using DCNQI derivative dopants from the measurements of the incident photon-to-current collection efficiency and photocurrent. The OPV cell using 3 wt% DHDCNQI exhibited a high PCE of 3.29% due to the high charge separation efficiency, good compatibility and low trap site effect.

  19. Defect formation energies and homogeneity ranges of rock salt-, pyrite-, chalcopyrite- and molybdenite-type compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Fiechter, S. [Hahn-Meitner-Institut, Glienicker Strasse 100, Berlin D-14109 (Germany)

    2004-07-01

    Employing the generalisation of Van Vechten's cavity model, formation energies of neutral point defects in pyrites (FeS{sub 2}, RuS{sub 2}), chalcopyrites (II-IV-V{sub 2} and I-III-VI{sub 2}) as well as molybdenites (MoS{sub 2}, WS{sub 2}) have been estimated. As input parameters the fundamental band gaps, work functions, electron affinities, surface energies, coordination numbers, covalent or ionic radii and unit cell parameters were used. The values calculated for tetrahedrally and octahedrally coordinated compounds agreed well with measured values. The data obtained can be used to calculate point defect concentrations and homogeneity ranges as a function of partial pressure and temperature. Introducing charged vacancies, the conductivity type can be predicted.

  20. Rutile-type Co doped SnO{sub 2} diluted magnetic semiconductor nanoparticles: Structural, dielectric and ferromagnetic behavior

    Energy Technology Data Exchange (ETDEWEB)

    Mehraj, Sumaira, E-mail: sumairamehraj07@gmail.com [Department of Applied Physics, Aligarh Muslim University, Aligarh-202002 (India); Shahnawaze Ansari, M. [Center of Nanotechnology, King Abdulaziz University, Jeddah-21589 (Saudi Arabia); Alimuddin [Department of Applied Physics, Aligarh Muslim University, Aligarh-202002 (India)

    2013-12-01

    Nanoparticles of basic composition Sn{sub 1−x}Co{sub x}O{sub 2} (x=0.00, 0.01, 0.03, 0.05 and 0.1) were synthesized through the citrate-gel method and were characterized for structural properties using X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS) and Fourier transform infrared spectroscopy (FT-IR). XRD analysis of the powder samples sintered at 500 °C for 12 h showed single phase rutile type tetragonal structure and the crystallite size decreased as the cobalt content was increased. FT-IR spectrum displayed various bands that came due to fundamental overtones and combination of O–H, Sn–O and Sn–O–Sn entities. The effect of Co doping on the electrical and magnetic properties was studied using dielectric spectroscopy and vibrating sample magnetometer (VSM) at room temperature. The dielectric parameters (ε, tan δ and σ{sub ac}) show their maximum value for 10% Co doping. The dielectric loss shows anomalous behavior with frequency where it exhibits the Debye relaxation. The variation of dielectric properties and ac conductivity with frequency reveals that the dispersion is due to the Maxwell–Wagner type of interfacial polarization in general and hopping of charge between Sn{sup 2+} and Sn{sup 4+} as well as between Co{sup 2+} and Co{sup 3+} ions. The complex impedance analysis was used to separate the grain and grain boundary contributions in the system which shows that the conduction process in grown nanoparticles takes place predominantly through grain boundary volume. Hysteresis loops were observed clearly in M–H curves from 0.01 to 0.1% Co doped SnO{sub 2} samples. The saturation magnetization of the doped samples increased slightly with increase of Co concentration. However pure SnO{sub 2} displayed paramagnetism which vanished at higher values of magnetic field.

  1. Drastic Control of Texture in a High Performance n-Type Polymeric Semiconductor and Implications for Charge Transport

    KAUST Repository

    Rivnay, Jonathan

    2011-07-12

    Control of crystallographic texture from mostly face-on to edge-on is observed for the film morphology of the n-type semicrystalline polymer {[N,N-9-bis(2-octyldodecyl)naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl] -alt-5,59-(2,29-bithiophene)}, P(NDI2OD-T2), when annealing the film to the polymer melting point followed by slow cooling to ambient temperature. A variety of X-ray diffraction analyses, including pole figure construction and Fourier transform peak shape deconvolution, are employed to quantify the texture change, relative degree of crystallinity and lattice order. We find that annealing the polymer film to the melt leads to a shift from 77.5% face-on to 94.6% edge-on lamellar texture as well as to a 2-fold increase in crystallinity and a 40% decrease in intracrystallite cumulative disorder. The texture change results in a significant drop in the electron-only diode current density through the film thickness upon melt annealing, while little change is observed in the in-plane transport of bottom gated thin film transistors. This suggests that the texture change is prevalent in the film interior and that either the (bottom) surface structure is different from the interior structure or the intracrystalline order and texture play a secondary role in transistor transport for this material. © 2011 American Chemical Society.

  2. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  3. Testing various types of agricultural wastes for the production of generator gas

    Energy Technology Data Exchange (ETDEWEB)

    Kjellstroem, B

    1982-05-08

    The aim of the project was to get an improved basis for the assessment of aretes which was required for use in a Swedish gas generator. It was found that waste which possessed high contents of ashes with a low melting point were unsuitable as a fuel. Four types of waste were tested. The shells of coconuts were applicable as fuel. The design of the generator had to be modified in order to use pellets of straw or compressed sugar-canes.

  4. Establishing blood gas ranges in healthy bovine neonates differentiated by age, sex, and breed type.

    Science.gov (United States)

    Dillane, Patrick; Krump, Lea; Kennedy, Aideen; Sayers, Ríona G; Sayers, Gearóid P

    2018-04-01

    Calf mortality and morbidity commonly occurs within the first month of life postpartum. Standard health ranges are invaluable aids in diagnostic veterinary medicine to confirm normal or the degree and nature of abnormal parameters in (sub)clinically ill animals. Extensive research has indicated significant differences between the physiologies of neonate and adult cattle, particularly for blood parameters such as pH, base excess, anion gap, and bicarbonate (HCO 3 - ). The objective of this research was to determine the influence of age, sex, and breed type, in addition to environmental factors, on the normal blood gas profiles of neonatal calves, and thus develop a scientifically validated reference range accounting for any significant factors. The study was conducted on healthy neonatal calves (n = 288), and completed over a 2-yr period. Individual calf blood gas analysis was conducted for parameters of pH, base excess, Na + , K + , Ca 2+ , Cl - , glucose, total hemoglobin, HCO 3 - , pCO 2 , anion gap, strong ion difference, and hematocrit levels. Regression procedures examined the combined effect of year, farm, age, breed type, sex, and hours postfeeding on each variable. Significant effects were observed for age, sex, and breed type on several of the blood gas variables. Furthermore, year, farm, and hours postfeeding appeared to have less of an influence on neonatal bovine blood gas profiles. Consequently, specific ranges based on the neonate's age, sex, and breed type will allow for more detailed and accurate diagnosis of health and ill health in neonatal calves. The Authors. Published by FASS Inc. and Elsevier Inc. on behalf of the American Dairy Science Association®. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/3.0/).

  5. The synthesis of a new type adsorbent for the removal of toxic gas by radiation-induced graft polymerization

    International Nuclear Information System (INIS)

    Okamoto, Jiro; Sugo, Takanobu

    1990-01-01

    A new type of adsorbent containing sulfuric acid group for the removal of ammonia gas was synthesized by radiation-induced graft polymerization of styrene onto fibrous and nonwoven type polypropylene followed by sulufonation with chlorosulfonic acid. The rate of the adsorption of ammonia gas by H-type adsorbent is independent of the ion-exchange capacity. The amount of ammonia gas adsorbed by the chemical adsorption was dependent on the ion-exchange capacity of H-type fibrous adsorbent and was kept constant value in spite of the equilibrium pressure of ammonia gas. Cu(II)- and Ni(II)-types fibrous adsorbent were prepared by the ion exchange reaction of Na-type fibrous adsorbent with metal nitrate solutions. Although, the rate of adsorption of ammonia gas by metal-type fibrous adsorbent is lower than that of H-type adsorbent, the amount of ammonia gas adsorbed increases compared to H-type adsorbent with the same ion exchange capacity. It was related to the highest coordination number of metal ion. The ratio of the number of ammonia molecules adsorbed chemically and the number of metal ion adsorbed in fibrous adsorbent was 4 for Cu-type and 6 for Ni-type fibrous adsorbent, respectively. (author)

  6. Fabrication of a P3HT-ZnO Nanowires Gas Sensor Detecting Ammonia Gas

    Directory of Open Access Journals (Sweden)

    Chin-Guo Kuo

    2017-12-01

    Full Text Available In this study, an organic-inorganic semiconductor gas sensor was fabricated to detect ammonia gas. An inorganic semiconductor was a zinc oxide (ZnO nanowire array produced by atomic layer deposition (ALD while an organic material was a p-type semiconductor, poly(3-hexylthiophene (P3HT. P3HT was suitable for the gas sensing application due to its high hole mobility, good stability, and good electrical conductivity. In this work, P3HT was coated on the zinc oxide nanowires by the spin coating to form an organic-inorganic heterogeneous interface of the gas sensor for detecting ammonia gas. The thicknesses of the P3HT were around 462 nm, 397 nm, and 277 nm when the speeds of the spin coating were 4000 rpm, 5000 rpm, and 6000 rpm, respectively. The electrical properties and sensing characteristics of the gas sensing device at room temperature were evaluated by Hall effect measurement and the sensitivity of detecting ammonia gas. The results of Hall effect measurement for the P3HT-ZnO nanowires semiconductor with 462 nm P3HT film showed that the carrier concentration and the mobility were 2.7 × 1019 cm−3 and 24.7 cm2∙V−1∙s−1 respectively. The gas sensing device prepared by the P3HT-ZnO nanowires semiconductor had better sensitivity than the device composed of the ZnO film and P3HT film. Additionally, this gas sensing device could reach a maximum sensitivity around 11.58 per ppm.

  7. Semiconductor ionizino. radiation detectors

    International Nuclear Information System (INIS)

    1982-01-01

    Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

  8. NOT DEAD YET: COOL CIRCUMGALACTIC GAS IN THE HALOS OF EARLY-TYPE GALAXIES

    International Nuclear Information System (INIS)

    Thom, Christopher; Tumlinson, Jason; Sembach, Kenneth R.; Werk, Jessica K.; Xavier Prochaska, J.; Oppenheimer, Benjamin D.; Peeples, Molly S.; Tripp, Todd M.; Katz, Neal S.; O'Meara, John M.; Ford, Amanda Brady; Davé, Romeel; Weinberg, David H.

    2012-01-01

    We report new observations of circumgalactic gas in the halos of early-type galaxies (ETGs) obtained by the COS-Halos Survey with the Cosmic Origins Spectrograph on board the Hubble Space Telescope. We find that detections of H I surrounding ETGs are typically as common and strong as around star-forming galaxies, implying that the total mass of circumgalactic material is comparable in the two populations. For ETGs, the covering fraction for H I absorption above 10 16 cm –2 is ∼40%-50% within ∼150 kpc. Line widths and kinematics of the detected material show it to be cold (T ∼ 5 K) in comparison to the virial temperature of the host halos. The implied masses of cool, photoionized circumgalactic medium baryons may be up to 10 9 -10 11 M ☉ . Contrary to some theoretical expectations, strong halo H I absorbers do not disappear as part of the quenching of star formation. Even passive galaxies retain significant reservoirs of halo baryons that could replenish the interstellar gas reservoir and eventually form stars. This halo gas may feed the diffuse and molecular gas that is frequently observed inside ETGs.

  9. Hydrogen Cracking in Gas Tungsten Arc Welding of an AISI Type 321 Stainless Steel

    Science.gov (United States)

    Rozenak, P.; Unigovski, Ya.; Shneck, R.

    The effects of in situ cathodic charging on the tensile properties and susceptibility to cracking of an AISI type 321 stainless steel, welded by the gas tungsten arc welding (GTAW) process, was studied by various treatments. Appearance of delta-ferrite phase in the as-welded steels in our tested conditions was observed with discontinuous grain boundaries (M23C6) and a dense distribution of metal carbides MC ((Ti, Nb)C), which precipitated in the matrix. Shielding gas rates changes the mechanical properties of the welds. Ultimate tensile strength and ductility are increases with the resistance to the environments related the increase of the supplied shielding inert gas rates. Charged specimens, caused mainly in decreases in the ductility of welded specimens. However, more severe decrease in ductility was obtained after post weld heat treatment (PWHT). The fracture of sensitized specimens was predominantly intergranular, whereas the as-welded specimens exhibited massive transgranular regions. Both types of specimen demonstrated narrow brittle zones at the sides of the fracture surface and ductile micro-void coalescences in the middle. Ferrite δ was form after welding with high density of dislocation structures and stacking faults formation and the thin stacking fault plates with e-martensite phase were typically found in the austenitic matrix after the cathodical charging process.

  10. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  11. Seismic response of high temperature gas-cooled reactor core with block-type fuel, (2)

    International Nuclear Information System (INIS)

    Ikushima, Takeshi; Honma, Toshiaki.

    1980-01-01

    For the aseismic design of a high temperature gas-cooled reactor (HTGR) with block-type fuel, it is necessary to predict the motion and force of core columns and blocks. To reveal column vibration characteristics in three-dimensional space and impact response, column vibration tests were carried out with a scale model of a one-region section (seven columns) of the HTGR core. The results are as follows: (1) the column has a soft spring characteristic based on stacked blocks connected with loose pins, (2) the column has whirling phenomena, (3) the compression spring force simulating the gas pressure has the effect of raising the column resonance frequency, and (4) the vibration behavior of the stacked block column and impact response of the surrounding columns show agreement between experiment and analysis. (author)

  12. Crossflow characteristics of flange type fuel element for very high temperature gas-cooled reactor

    International Nuclear Information System (INIS)

    Takizuka, Takakazu; Kaburaki, Hideo; Suzuki, Kunihiko; Nakamura, Masahide.

    1987-01-01

    Fuel element design incorporating mating flanges at block end faces has the potential to improve thermal hydraulic performance of a VHTR (very high temperature gas-cooled reactor) core. As part of research and development efforts to establish flange type fuel element design, experiments and analyses were carried out on crossflow through interface gap between elements. Air at atmospheric pressure and ambient temperature was used as a fluid. Crossflow loss coefficient factors were obtained with three test models, having different flange mating clearances, for various interface gap configurations, gap widths and block misalignments. It was found that crossflow loss coefficient factors for flange type fuel element were much larger than those for conventional flat-faced element. Numerical analyses were also made using a simple model devised to represent the crossflow path at the fuel element interface. The close agreement between numerical results and experimental data indicated that this model could predict well the crossflow characteristics of the flange type fuel element. (author)

  13. Manipulating semiconductor colloidal stability through doping.

    Science.gov (United States)

    Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

    2014-10-10

    The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

  14. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  15. Gas

    International Nuclear Information System (INIS)

    1996-01-01

    The French government has decided to modify the conditions of extension of local natural gas authorities to neighbouring districts. The European Union is studying the conditions of internal gas market with the objective of more open markets although considering public service requirements

  16. Genetic Types and Source of the Upper Paleozoic Tight Gas in the Hangjinqi Area, Northern Ordos Basin, China

    Directory of Open Access Journals (Sweden)

    Xiaoqi Wu

    2017-01-01

    Full Text Available The molecular and stable isotopic compositions of the Upper Paleozoic tight gas in the Hangjinqi area in northern Ordos Basin were investigated to study the geochemical characteristics. The tight gas is mainly wet with the dryness coefficient (C1/C1–5 of 0.853–0.951, and δ13C1 and δ2H-C1 values are ranging from -36.2‰ to -32.0‰ and from -199‰ to -174‰, respectively, with generally positive carbon and hydrogen isotopic series. Identification of gas origin indicates that tight gas is mainly coal-type gas, and it has been affected by mixing of oil-type gas in the wells from the Shilijiahan and Gongkahan zones adjacent to the Wulanjilinmiao and Borjianghaizi faults. Gas-source correlation indicates that coal-type gas in the Shiguhao zone displays distal-source accumulation. It was mainly derived from the coal-measure source rocks in the Upper Carboniferous Taiyuan Formation (C3t and Lower Permian Shanxi Formation (P1s, probably with a minor contribution from P1s coal measures from in situ Shiguhao zone. Natural gas in the Shilijiahan and Gongkahan zones mainly displays near-source accumulation. The coal-type gas component was derived from in situ C3t-P1s source rocks, whereas the oil-type gas component might be derived from the carbonate rocks in the Lower Ordovician Majiagou Formation (O1m.

  17. Detection of radioactivity by semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1991-01-01

    The class of detectors discussed in this chapter has a responsive component involving a diode, a junction between two types of semiconductor materials. Although diode detectors are not particularly efficient in counting radioactive emissions, they are superior to other commercially available detectors in spectroscopy. Consequently, diode detectors are used extensively for quanlitative purposes and for quantitative purposes when mixtures of radionuclides are present, not the usual situation with biological or medical research. Topics addressed in this chapter are as follows: Band Theory; Semiconductors and Junctions; and Radiation Detectors. 6 refs., 14 figs

  18. Neutron beam test of multi-grid-type microstrip gas chamber

    International Nuclear Information System (INIS)

    Fujita, K.; Takahashi, H.; Siritiprussamee, P.; Niko, H.; Kai, M.; Nakazawa, M.; Ino, T.; Sato, S.; Yokoo, T.; Furusaka, M.; Kanazawa, M.

    2006-01-01

    Multi-grid-type microstrip gas chambers (M-MSGCs) are being developed for the next-generation pulsed neutron source. Two new concepts, a global-local-grouping (GLG) method and a graded cathode pattern readout method, were applied to the M-MSGC design for realizing higher counting rate than traditional 3 He proportional counters. One-dimensional detectors with 700 mm-long test plates were fabricated and tested with X-ray and neutron beams, which demonstrated position detection capability based on these concepts

  19. Molecule-surface interaction processes of relevance to gas blanket type fusion device divertor design

    Energy Technology Data Exchange (ETDEWEB)

    Snowdon, K.J. [Newcastle Univ. (United Kingdom). Dept. of Physics; Tawara, H.

    1997-01-01

    The mechanisms which may lead to the departure of molecular species from surfaces exposed to low energy (0.1-100 eV) particle or photon and electron irradiation are reviewed. Where possible, the charge and electronic state, angular, translational and internal energy distributions of the departing molecules are described and the physical origin of the nature of those distributions identified. The consequences, for the departing molecules, of certain material choices become apparent from such an analysis. Such information may help guide the choice of appropriate materials for plasma facing components of gas-blanket type divertors such as that recently proposed for the International Thermonuclear Experimental Reactor (ITER). (author). 71 refs.

  20. Aseismic study of high temperature gas-cooled reactor core with block-type fuel, 3

    International Nuclear Information System (INIS)

    Ikushima, Takeshi; Honma, Toshiaki.

    1985-01-01

    A two-dimensional horizontal seismic experiment with single axis and simultaneous two-axes excitations was performed to obtain the core seismic design data on the block-type high temperature gas-cooled reactor. Effects of excitation directions and core side support stiffness on characteristics of core displacements and reaction forces of support were revealed. The values of the side reaction forces are the largest in the excitation of flat-to-flat of hexagonal block. Preload from the core periphery to the core center are effective to decrease core displacements and side reaction forces. (author)

  1. Pseudo 2-transistor active pixel sensor using an n-well/gate-tied p-channel metal oxide semiconductor field eeffect transistor-type photodetector with built-in transfer gate

    Science.gov (United States)

    Seo, Sang-Ho; Seo, Min-Woong; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

    2008-11-01

    In this paper, a pseudo 2-transistor active pixel sensor (APS) has been designed and fabricated by using an n-well/gate-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector with built-in transfer gate. The proposed sensor has been fabricated using a 0.35 μm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) logic process. The pseudo 2-transistor APS consists of two NMOSFETs and one photodetector which can amplify the generated photocurrent. The area of the pseudo 2-transistor APS is 7.1 × 6.2 μm2. The sensitivity of the proposed pixel is 49 lux/(V·s). By using this pixel, a smaller pixel area and a higher level of sensitivity can be realized when compared with a conventional 3-transistor APS which uses a pn junction photodiode.

  2. Outflow Kinematics Manifested by the Hα Line: Gas Outflows in Type 2 AGNs. IV

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Daeun; Woo, Jong-Hak; Bae, Hyun-Jin, E-mail: woo@astro.snu.ac.kr [Astronomy Program, Department of Physics and Astronomy, Seoul National University, Seoul 151-742 (Korea, Republic of)

    2017-08-20

    Energetic ionized gas outflows driven by active galactic nuclei (AGNs) have been studied as a key phenomenon related to AGN feedback. To probe the kinematics of the gas in the narrow-line region, [O iii] λ 5007 has been utilized in a number of studies showing nonvirial kinematic properties due to AGN outflows. In this paper, we statistically investigate whether the H α emission line is influenced by AGN-driven outflows by measuring the kinematic properties based on the H α line profile and comparing them with those of [O iii]. Using the spatially integrated spectra of ∼37,000 Type 2 AGNs at z < 0.3 selected from the Sloan Digital Sky Survey DR7, we find a nonlinear correlation between H α velocity dispersion and stellar velocity dispersion that reveals the presence of the nongravitational component, especially for AGNs with a wing component in H α . The large H α velocity dispersion and velocity shift of luminous AGNs are clear evidence of AGN outflow impacts on hydrogen gas, while relatively smaller kinematic properties compared to those of [O iii] imply that the observed outflow effect on the H α line is weaker than the case of [O iii].

  3. A Furan-Thiophene-Based Quinoidal Compound: A New Class of Solution-Processable High-Performance n-Type Organic Semiconductor.

    Science.gov (United States)

    Xiong, Yu; Tao, Jingwei; Wang, Ruihao; Qiao, Xiaolan; Yang, Xiaodi; Wang, Deliang; Wu, Hongzhuo; Li, Hongxiang

    2016-07-01

    The furan-thiophene-based quinoidal organic semiconductor, TFT-CN, is designed and synthesized. TFT-CN displays a high electron mobility of 7.7 cm(2) V(-1) s(-1) , two orders of magnitude higher than the corresponding thiophene-based derivative. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Stationary Shock Waves with Oscillating Front in Dislocation Systems of Semiconductors

    Science.gov (United States)

    Gestrin, S. G.; Shchukina, E. V.

    2018-05-01

    The paper presents a study of weakly nonlinear wave processes in the cylindrical region of a hole gas surrounding a negatively charged dislocation in an n-type semiconductor crystal. It is shown that shock waves propagating along the dislocation are the solutions of the Korteweg-de Vries-Burgers equation when the dispersion and dissipation of medium are taken into account. Estimates are obtained for the basic physical parameters characterizing the shock wave and the region inside the Reed cylinder.

  5. Cryostat for an well logging probe using a semiconductor detector

    International Nuclear Information System (INIS)

    Tapphorn, R.M.

    1978-01-01

    This invention proposes to construct an well logging tool of the type comprising a semiconductor radiation detector devoid of the defects usually observed. This aim is attained by means of a cryostat to cool a semiconductor radiation detector in a restricted space where the temperature is high. It includes a long box dimensioned to pass through a bore hole, a cryogenic chamber housed in the box, a vacuum chamber thermally insulating the cryogenic chamber and placed around it, a semiconductor radiation detector housed in the vacuum chamber in thermal contact with the cryogenic chamber and an active vacuum pump fitted in the box and connected to the vacuum chamber to maintain a vacuum in it. In an improved version, the vacuum pump is fitted outside the cryostat so that it operates independently of the temperature conditions in the cryostat. If the pump needs to be cooled to reduce the gas discharge, it can be fitted inside the cryostat and connected to the cryogenic chamber or a second cryostat can also be provided to cool the pump. The vacuum pump is designed to maintain the vacuum in the thermal insulation vacuum chamber at a desired figure, preferably 10 -4 Torr or under, in order to preserve the integrity of the thermal insulation layer around the cryogenic chamber and thereby extending the efficient operating period of the detector. The cryogenic material used is preferably of fusion resistant type such as Freon 22 [fr

  6. Development of semiconductor electronics

    International Nuclear Information System (INIS)

    Bardeen, John.

    1977-01-01

    In 1931, Wilson applied Block's theory about the energy bands for the motion of electrons in a crystal lattice to semiconductors and showed that conduction can take place in two different ways, by electrons and by holes. Not long afterwards Frenkel showed that these carriers can flow by diffusion in a concentration gradient as well as under the influence of an electric field and wrote down equations for the current flow. The third major contribution, in the late 1930's was the explanation of rectification at a metalsemiconductor contact by Mott and more completely by Schottky. In late 1947 the first transistor of the point contact type was invented by Brattin, Shockley and Bardeen. Then after single crystals of Ge were grown, the junction transistor was developed by the same group. The first silicon transistors appeared in 1954. Then an important step was discovery of the planar transistor by Hoenri in 1960 which led to development of integrated circuits by 1962. Many transistors are produced by batch processing on a slice of silicon. Then in 1965 Mos (Metal-Oxide Semiconductor) transistor and in 1968 LSI (Large Scale Intergration circuits) were developed. Aside from electronic circuits, there are many other applications of semiconductors, including junction power rectifiers, junction luminescence (including lasers), solar batteries, radiation detectors, microwave oscillators and charged-coupled devices for computer memories and devices. One of the latest developments is a microprocessor with thousands of transistors and associated circuitry on a single small chip of silicon. It can be programmed to provide a variety of circuit functions, thus it is not necessary to go through the great expense of LSI's for each desired function, but to use standard microprocessors and program to do the job

  7. Organic Semiconductor Photovoltaics

    Science.gov (United States)

    Sariciftci, Niyazi Serdar

    2005-03-01

    Recent developments on organic photovoltaic elements are reviewed. Semiconducting conjugated polymers and molecules as well as nanocrystalline inorganic semiconductors are used in composite thin films. The photophysics of such photoactive devices is based on the photoinduced charge transfer from donor type semiconducting molecules onto acceptor type molecules such as Buckminsterfullerene, C60 and/or nanoparticles. Similar to the first steps in natural photosynthesis, this photoinduced electron transfer leads to a number of potentially interesting applications which include sensitization of the photoconductivity and photovoltaic phenomena. Examples of photovoltaic architectures are discussed with their potential in terrestrial solar energy conversion. Several materials are introduced and discussed for their photovoltaic activities. Furthermore, nanomorphology has been investigated with AFM, SEM and TEM. The morphology/property relationship for a given photoactive system is found to be a major effect.

  8. Monte Carlo Analysis of the Battery-Type High Temperature Gas Cooled Reactor

    Science.gov (United States)

    Grodzki, Marcin; Darnowski, Piotr; Niewiński, Grzegorz

    2017-12-01

    The paper presents a neutronic analysis of the battery-type 20 MWth high-temperature gas cooled reactor. The developed reactor model is based on the publicly available data being an `early design' variant of the U-battery. The investigated core is a battery type small modular reactor, graphite moderated, uranium fueled, prismatic, helium cooled high-temperature gas cooled reactor with graphite reflector. The two core alternative designs were investigated. The first has a central reflector and 30×4 prismatic fuel blocks and the second has no central reflector and 37×4 blocks. The SERPENT Monte Carlo reactor physics computer code, with ENDF and JEFF nuclear data libraries, was applied. Several nuclear design static criticality calculations were performed and compared with available reference results. The analysis covered the single assembly models and full core simulations for two geometry models: homogenous and heterogenous (explicit). A sensitivity analysis of the reflector graphite density was performed. An acceptable agreement between calculations and reference design was obtained. All calculations were performed for the fresh core state.

  9. Monte Carlo Analysis of the Battery-Type High Temperature Gas Cooled Reactor

    Directory of Open Access Journals (Sweden)

    Grodzki Marcin

    2017-12-01

    Full Text Available The paper presents a neutronic analysis of the battery-type 20 MWth high-temperature gas cooled reactor. The developed reactor model is based on the publicly available data being an ‘early design’ variant of the U-battery. The investigated core is a battery type small modular reactor, graphite moderated, uranium fueled, prismatic, helium cooled high-temperature gas cooled reactor with graphite reflector. The two core alternative designs were investigated. The first has a central reflector and 30×4 prismatic fuel blocks and the second has no central reflector and 37×4 blocks. The SERPENT Monte Carlo reactor physics computer code, with ENDF and JEFF nuclear data libraries, was applied. Several nuclear design static criticality calculations were performed and compared with available reference results. The analysis covered the single assembly models and full core simulations for two geometry models: homogenous and heterogenous (explicit. A sensitivity analysis of the reflector graphite density was performed. An acceptable agreement between calculations and reference design was obtained. All calculations were performed for the fresh core state.

  10. Fast discharging homopolar drum-type generator with gas bearing and flexible copper-fiber brushes

    International Nuclear Information System (INIS)

    Kibardin, A.S.; Komin, A.V.; Sojkin, V.F.; Frolkin, V.I.

    1984-01-01

    The description and results of testing schock-excited homopolar generator (SEHG) with a drum-type rotor, a gas bearing and flexible copper-fiber brushes are presented. SEHG has a magnetic core with two excitation coils with the designed field of 1.8-2 T in the gap. The drum-type titanium rotor has 80 kg, is 0.5 m in diameter, 0.25 m length and 0.05 m thick. SEHG power is 3.6 MJ, overall dimensions are 0.8x1 m. Single- and double-row bearings, representing an aluminium shell of 15 mm thick, established inside an external backward current lead and isolated from it, are used to control serviceability of a radial gas-static bearing, which is a support for an SEHG rotor. The bearing surface was covered with the colloidal graphite and had one or two rows by 24 openings for swelling. Brush units represent a bronze brush ring, containing 44 copper-fiber brushes. Tests results confirm serviceability of copper-fiber brushes with quite large dimensions and permit to count on producing the 2.4 MA electric discharge and 12 ms pulse rise time

  11. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  12. Laser vapor phase deposition of semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Karlov, N.V.; Luk' ianchuk, B.S.; Sisakian, E.V.; Shafeev, G.A.

    1987-06-01

    The pyrolytic effect of IR laser radiation is investigated with reference to the initiation and control of the vapor phase deposition of semiconductor films. By selecting the gas mixture composition and laser emission parameters, it is possible to control the deposition and crystal formation processes on the surface of semiconductors, with the main control action achieved due to the nonadiabatic kinetics of reactions in the gas phase and high temperatures in the laser heating zone. This control mechanism is demonstrated experimentally during the laser vapor deposition of germanium and silicon films from tetrachlorides on single-crystal Si and Ge substrates. 5 references.

  13. Small-signal analysis of granular semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Varpula, Aapo; Sinkkonen, Juha; Novikov, Sergey, E-mail: aapo.varpula@tkk.f [Department of Micro and Nanosciences, Aalto University, PO Box 13500, FI-00076 Aalto, Espoo (Finland)

    2010-11-01

    The small-signal ac response of granular n-type semiconductors is calculated analytically using the drift-diffusion theory when electronic trapping at grain boundaries is present. An electrical equivalent circuit (EEC) model of a granular n-type semiconductor is presented. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is very good in a broad frequency range at low dc bias voltages.

  14. Small-signal analysis of granular semiconductors

    International Nuclear Information System (INIS)

    Varpula, Aapo; Sinkkonen, Juha; Novikov, Sergey

    2010-01-01

    The small-signal ac response of granular n-type semiconductors is calculated analytically using the drift-diffusion theory when electronic trapping at grain boundaries is present. An electrical equivalent circuit (EEC) model of a granular n-type semiconductor is presented. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is very good in a broad frequency range at low dc bias voltages.

  15. Semiconductor saturable absorbers for ultrafast THz signals

    DEFF Research Database (Denmark)

    Hoffmann, Matthias C.; Turchinovich, Dmitry

    We demonstrate saturable absorber behavior of n-type semiconductors in the THz frequency range using nonlinear THz spectroscopy. Further, we observe THz pulse shortening and increase of the group refractive index at high field strengths.......We demonstrate saturable absorber behavior of n-type semiconductors in the THz frequency range using nonlinear THz spectroscopy. Further, we observe THz pulse shortening and increase of the group refractive index at high field strengths....

  16. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  17. Gas turbine

    International Nuclear Information System (INIS)

    Yang, Ok Ryong

    2004-01-01

    This book introduces gas turbine cycle explaining general thing of gas turbine, full gas turbine cycle, Ericson cycle and Brayton cycle, practical gas turbine cycle without pressure loss, multiaxial type gas turbine cycle and special gas turbine cycle, application of basic theory on a study on suction-cooling gas turbine cycle with turbo-refrigerating machine using the bleed air, and general performance characteristics of the suction-cooling gas turbine cycle combined with absorption-type refrigerating machine.

  18. Semiconductor integrated circuits

    International Nuclear Information System (INIS)

    Michel, A.E.; Schwenker, R.O.; Ziegler, J.F.

    1979-01-01

    An improved method involving ion implantation to form non-epitaxial semiconductor integrated circuits. These are made by forming a silicon substrate of one conductivity type with a recessed silicon dioxide region extending into the substrate and enclosing a portion of the silicon substrate. A beam of ions of opposite conductivity type impurity is directed at the substrate at an energy and dosage level sufficient to form a first region of opposite conductivity within the silicon dioxide region. This impurity having a concentration peak below the surface of the substrate forms a region of the one conductivity type which extends from the substrate surface into the first opposite type region to a depth between the concentration peak and the surface and forms a second region of opposite conductivity type. The method, materials and ion beam conditions are detailed. Vertical bipolar integrated circuits can be made this way when the first opposite type conductivity region will function as a collector. Also circuits with inverted bipolar devices when this first region functions as a 'buried'' emitter region. (U.K.)

  19. X-ray absorption spectroscopy of semiconductors

    CERN Document Server

    Ridgway, Mark

    2015-01-01

    X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-sit...

  20. Quantum theory of the electronic and optical properties of low-dimensional semiconductor systems

    Science.gov (United States)

    Lau, Wayne Heung

    This thesis examines the electronic and optical properties of low-dimensional semiconductor systems. A theory is developed to study the electron-hole generation-recombination process of type-II semimetallic semiconductor heterojunctions based on a 3 x 3 k·p matrix Hamiltonian (three-band model) and an 8 x 8 k·p matrix Hamiltonian (eight-band model). A novel electron-hole generation and recombination process, which is called activationless generation-recombination process, is predicted. It is demonstrated that the current through the type-II semimetallic semiconductor heterojunctions is governed by the activationless electron-hole generation-recombination process at the heterointerfaces, and that the current-voltage characteristics are essentially linear. A qualitative agreement between theory and experiments is observed. The numerical results of the eight-band model are compared with those of the threeband model. Based on a lattice gas model, a theory is developed to study the influence of a random potential on the ionization equilibrium conditions for bound electron-hole pairs (excitons) in III--V semiconductor heterostructures. It is demonstrated that ionization equilibrium conditions for bound electron-hole pairs change drastically in the presence of strong disorder. It is predicted that strong disorder promotes dissociation of excitons in III--V semiconductor heterostructures. A theory of polariton (photon dressed by phonon) spontaneous emission in a III--V semiconductor doped with semiconductor quantum dots (QDs) or quantum wells (QWs) is developed. For the first time, superradiant and subradiant polariton spontaneous emission phenomena in a polariton-QD (QW) coupled system are predicted when the resonance energies of the two identical QDs (QWs) lie outside the polaritonic energy gap. It is also predicted that when the resonance energies of the two identical QDs (QWs) lie inside the polaritonic energy gap, spontaneous emission of polariton in the polariton

  1. Dielectric function of semiconductor superlattice

    International Nuclear Information System (INIS)

    Qin Guoyi.

    1990-08-01

    We present a calculation of the dielectric function for semiconductor GaAs/Ga 1-x Al x As superlattice taking account of the extension of the electron envelope function and the difference of both the dielectric constant and width between GaAs and Ga 1-x Al x As layers. In the appropriate limits, our results exactly reduce to the well-known results of the quasi two-dimensional electron gas obtained by Lee and Spector and of the period array of two-dimensional electron layers obtained by Das Sarma and Quinn. By means of the dielectric function of the superlattice, the dispersion relation of the collective excitation and the screening property of semiconductor superlattice are discussed and compared with the results of the quasi two-dimensional system and with the results of the periodic array of the two-dimensional electron layers. (author). 4 refs, 3 figs

  2. Semiconductor processing apparatus with compact free radical source

    NARCIS (Netherlands)

    Kovalgin, Alexeij Y.; Aarnink, Antonius A.I.

    2013-01-01

    A semiconductor processing apparatus (1), comprising: a substrate processing chamber (158), defining a substrate support location (156) at which a generally planar semiconductor substrate (300) is supportable; and at least one free radical source (200), including: a precursor gas source (250); an

  3. A Portable Array-Type Optical Fiber Sensing Instrument for Real-Time Gas Detection

    Directory of Open Access Journals (Sweden)

    San-Shan Hung

    2016-12-01

    Full Text Available A novel optical fiber array-type of sensing instrument with temperature compensation for real-time detection was developed to measure oxygen, carbon dioxide, and ammonia simultaneously. The proposed instrument is multi-sensing array integrated with real-time measurement module for portable applications. The sensing optical fibers were etched and polished before coating to increase sensitivities. The ammonia and temperature sensors were each composed of a dye-coated single-mode fiber with constructing a fiber Bragg grating and a long-period filter grating for detecting light intensity. Both carbon dioxide and oxygen sensing structures use multimode fibers where 1-hydroxy-3,6,8-pyrene trisulfonic acid trisodium salt is coated for carbon dioxide sensing and Tris(2,2′-bipyridyl dichlororuthenium(II hexahydrate and Tris(bipyridineruthenium(II chloride are coated for oxygen sensing. Gas-induced fluorescent light intensity variation was applied to detect gas concentration. The portable gas sensing array was set up by integrating with photo-electronic measurement modules and a human-machine interface to detect gases in real time. The measured data have been processed using piecewise-linear method. The sensitivity of the oxygen sensor were 1.54%/V and 9.62%/V for concentrations less than 1.5% and for concentrations between 1.5% and 6%, respectively. The sensitivity of the carbon dioxide sensor were 8.33%/V and 9.62%/V for concentrations less than 2% and for concentrations between 2% and 5%, respectively. For the ammonia sensor, the sensitivity was 27.78%/V, while ammonia concentration was less than 2%.

  4. A Portable Array-Type Optical Fiber Sensing Instrument for Real-Time Gas Detection.

    Science.gov (United States)

    Hung, San-Shan; Chang, Hsing-Cheng; Chang, I-Nan

    2016-12-08

    A novel optical fiber array-type of sensing instrument with temperature compensation for real-time detection was developed to measure oxygen, carbon dioxide, and ammonia simultaneously. The proposed instrument is multi-sensing array integrated with real-time measurement module for portable applications. The sensing optical fibers were etched and polished before coating to increase sensitivities. The ammonia and temperature sensors were each composed of a dye-coated single-mode fiber with constructing a fiber Bragg grating and a long-period filter grating for detecting light intensity. Both carbon dioxide and oxygen sensing structures use multimode fibers where 1-hydroxy-3,6,8-pyrene trisulfonic acid trisodium salt is coated for carbon dioxide sensing and Tris(2,2'-bipyridyl) dichlororuthenium(II) hexahydrate and Tris(bipyridine)ruthenium(II) chloride are coated for oxygen sensing. Gas-induced fluorescent light intensity variation was applied to detect gas concentration. The portable gas sensing array was set up by integrating with photo-electronic measurement modules and a human-machine interface to detect gases in real time. The measured data have been processed using piecewise-linear method. The sensitivity of the oxygen sensor were 1.54%/V and 9.62%/V for concentrations less than 1.5% and for concentrations between 1.5% and 6%, respectively. The sensitivity of the carbon dioxide sensor were 8.33%/V and 9.62%/V for concentrations less than 2% and for concentrations between 2% and 5%, respectively. For the ammonia sensor, the sensitivity was 27.78%/V, while ammonia concentration was less than 2%.

  5. No Evidence of Circumstellar Gas Surrounding Type Ia Supernova SN 2017cbv

    Science.gov (United States)

    Ferretti, Raphael; Amanullah, Rahman; Bulla, Mattia; Goobar, Ariel; Johansson, Joel; Lundqvist, Peter

    2017-12-01

    Nearby type Ia supernovae (SNe Ia), such as SN 2017cbv, are useful events to address the question of what the elusive progenitor systems of the explosions are. Hosseinzadeh et al. suggested that the early blue excess of the light curve of SN 2017cbv could be due to the supernova ejecta interacting with a non-degenerate companion star. Some SN Ia progenitor models suggest the existence of circumstellar (CS) environments in which strong outflows create low-density cavities of different radii. Matter deposited at the edges of the cavities should be at distances at which photoionization due to early ultraviolet (UV) radiation of SNe Ia causes detectable changes to the observable Na I D and Ca II H&K absorption lines. To study possible narrow absorption lines from such material, we obtained a time series of high-resolution spectra of SN 2017cbv at phases between ‑14.8 and +83 days with respect to B-band maximum, covering the time at which photoionization is predicted to occur. Both narrow Na I D and Ca II H&K are detected in all spectra, with no measurable changes between the epochs. We use photoionization models to rule out the presence of Na I and Ca II gas clouds along the line of sight of SN 2017cbv between ∼8 × 1016–2 × 1019 cm and ∼1015–1017 cm, respectively. Assuming typical abundances, the mass of a homogeneous spherical CS gas shell with radius R must be limited to {M}{{H} {{I}}}{CSM}R/{10}17[{cm}])}2 {M}ȯ . The bounds point to progenitor models that deposit little gas in their CS environment.

  6. Semiconductor device and method of manufacturing the same

    NARCIS (Netherlands)

    2009-01-01

    The invention relates to a semiconductor device (10) with a semiconductor body (12) comprising a bipolar transistor with an emitter region, a base region and a collector region (1, 2, 3) of, respectively, a first conductivity type, a second conductivity type opposite to the first conductivity type,

  7. A high-current rail-type gas switch with preionization by an additional corona discharge

    Energy Technology Data Exchange (ETDEWEB)

    Antipov, E. I.; Belozerov, O. S.; Krastelev, E. G., E-mail: ekrastelev@yandex.ru [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) (Russian Federation)

    2016-12-15

    The characteristics of a high-current rail-type gas switch with preionization of the gas (air) in a spark gap by an additional corona discharge are investigated. The experiments were performed in a voltage range of 10–45 kV using a two-electrode switch consisting of two cylindrical electrodes with a diameter of 22 mm and a length of 100 mm and a set of laterally located corona-discharge needles. The requirements for the position and size of the needles are defined for which a corona discharge is ignited before a breakdown of the main gap and does not change to a sparking form, and the entire length of the rail electrodes is efficiently used. The fulfillment of these requirements ensures stable operation of the switch with a small variation of the pulse breakdown voltage, which is not more than 1% for a fixed voltage-pulse rise time in the range from 150 ns to 3.5 μs. A short delay time of the switch breakdown makes it possible to control the two-electrode switch by an overvoltage pulse of nanosecond duration.

  8. Rarefied gas flows through a curved channel: Application of a diffusion-type equation

    Science.gov (United States)

    Aoki, Kazuo; Takata, Shigeru; Tatsumi, Eri; Yoshida, Hiroaki

    2010-11-01

    Rarefied gas flows through a curved two-dimensional channel, caused by a pressure or a temperature gradient, are investigated numerically by using a macroscopic equation of convection-diffusion type. The equation, which was derived systematically from the Bhatnagar-Gross-Krook model of the Boltzmann equation and diffuse-reflection boundary condition in a previous paper [K. Aoki et al., "A diffusion model for rarefied flows in curved channels," Multiscale Model. Simul. 6, 1281 (2008)], is valid irrespective of the degree of gas rarefaction when the channel width is much shorter than the scale of variations of physical quantities and curvature along the channel. Attention is also paid to a variant of the Knudsen compressor that can produce a pressure raise by the effect of the change of channel curvature and periodic temperature distributions without any help of moving parts. In the process of analysis, the macroscopic equation is (partially) extended to the case of the ellipsoidal-statistical model of the Boltzmann equation.

  9. A high-current rail-type gas switch with preionization by an additional corona discharge

    International Nuclear Information System (INIS)

    Antipov, E. I.; Belozerov, O. S.; Krastelev, E. G.

    2016-01-01

    The characteristics of a high-current rail-type gas switch with preionization of the gas (air) in a spark gap by an additional corona discharge are investigated. The experiments were performed in a voltage range of 10–45 kV using a two-electrode switch consisting of two cylindrical electrodes with a diameter of 22 mm and a length of 100 mm and a set of laterally located corona-discharge needles. The requirements for the position and size of the needles are defined for which a corona discharge is ignited before a breakdown of the main gap and does not change to a sparking form, and the entire length of the rail electrodes is efficiently used. The fulfillment of these requirements ensures stable operation of the switch with a small variation of the pulse breakdown voltage, which is not more than 1% for a fixed voltage-pulse rise time in the range from 150 ns to 3.5 μs. A short delay time of the switch breakdown makes it possible to control the two-electrode switch by an overvoltage pulse of nanosecond duration.

  10. Metal oxide gas sensors on the nanoscale

    Science.gov (United States)

    Plecenik, A.; Haidry, A. A.; Plecenik, T.; Durina, P.; Truchly, M.; Mosko, M.; Grancic, B.; Gregor, M.; Roch, T.; Satrapinskyy, L.; Moskova, A.; Mikula, M.; Kus, P.

    2014-06-01

    Low cost, low power and highly sensitive gas sensors operating at room temperature are very important devices for controlled hydrogen gas production and storage. One of the disadvantages of chemosensors is their high operating temperature (usually 200 - 400 °C), which excludes such type of sensors from usage in explosive environment. In this report, a new concept of gas chemosensors operating at room temperature based on TiO2 thin films is discussed. Integration of such sensor is fully compatible with sub-100 nm semiconductor technology and could be transferred directly from labor to commercial sphere.

  11. A semiconductor laser device

    Energy Technology Data Exchange (ETDEWEB)

    Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

    1984-03-17

    A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

  12. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    International Nuclear Information System (INIS)

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

  13. Emissions deterioration for three alternative fuel vehicle types: Natural gas, ethanol, and methanol vehicles

    International Nuclear Information System (INIS)

    Winebrake, J.J.; Deaton, M.L.

    1997-01-01

    Although there have been several studies examining emissions from in-use alternative fuel vehicles (AFVs), little is known about the deterioration of these emissions over vehicle lifetimes and how this deterioration compares with deterioration from conventional vehicles (CVs). This paper analyzes emissions data from 70 AFVs and 70 CVs operating in the federal government fleet to determine whether AFV emissions deterioration differs significantly from CV emissions deterioration. The authors conduct the analysis on three alternative fuel types (natural gas, methanol, and ethanol) and on five pollutants (carbon monoxide, carbon dioxide, total hydrocarbons, non-methane hydrocarbons, and nitrogen oxides). They find that for most cases they studied, deterioration differences are not statistically significant; however, several exceptions suggest that air quality planners and regulators must further analyze AFV emissions deterioration in order to properly include these technologies into broader air quality management schemes

  14. Stochastic gravitational waves from a new type of modified Chaplygin gas

    International Nuclear Information System (INIS)

    Bouhmadi-Lopez, Mariam; Frazao, Pedro; Henriques, Alfredo B.

    2010-01-01

    We propose a new scenario for the early Universe where there is a smooth transition between an early de Sitter-like phase and a radiation-dominated era. In this model, the matter content is modeled by a new type of generalized Chaplygin gas [6] for the early Universe, with an underlying scalar field description. We study the gravitational waves generated by the quantum fluctuations. In particular, we calculate the gravitational-wave power spectrum, as it would be measured today, following the method of the Bogoliubov coefficients. We show that the high frequencies region of the spectrum depends strongly on one of the parameters of the model. On the other hand, we use the number of e folds, along with the power spectra and spectral index of the scalar perturbations, to constrain the model observationally.

  15. Zinc Alloys for the Fabrication of Semiconductor Devices

    Science.gov (United States)

    Ryu, Yungryel; Lee, Tae S.

    2009-01-01

    ZnBeO and ZnCdSeO alloys have been disclosed as materials for the improvement in performance, function, and capability of semiconductor devices. The alloys can be used alone or in combination to form active photonic layers that can emit over a range of wavelength values. Materials with both larger and smaller band gaps would allow for the fabrication of semiconductor heterostructures that have increased function in the ultraviolet (UV) region of the spectrum. ZnO is a wide band-gap material possessing good radiation-resistance properties. It is desirable to modify the energy band gap of ZnO to smaller values than that for ZnO and to larger values than that for ZnO for use in semiconductor devices. A material with band gap energy larger than that of ZnO would allow for the emission at shorter wavelengths for LED (light emitting diode) and LD (laser diode) devices, while a material with band gap energy smaller than that of ZnO would allow for emission at longer wavelengths for LED and LD devices. The amount of Be in the ZnBeO alloy system can be varied to increase the energy bandgap of ZnO to values larger than that of ZnO. The amount of Cd and Se in the ZnCdSeO alloy system can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped or can be p-type doped using selected dopant elements, or can be n-type doped using selected dopant elements. The layers and structures formed with both the ZnBeO and ZnCdSeO semiconductor alloys - including undoped, p-type-doped, and n-type-doped types - can be used for fabricating photonic and electronic semiconductor devices for use in photonic and electronic applications. These devices can be used in LEDs, LDs, FETs (field effect transistors), PN junctions, PIN junctions, Schottky barrier diodes, UV detectors and transmitters, and transistors and transparent transistors. They also can be used in applications for lightemitting display, backlighting for displays, UV and

  16. Structural Pre-sizing of a Coaxial Double-tube Type Hot Gas Duct

    Energy Technology Data Exchange (ETDEWEB)

    Song, Kee Nam; Kim, Y-W [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2008-10-15

    The nuclear hydrogen system being researched at KAERI is planning to produce hydrogen in the order of 950 .deg. C by using nuclear energy and a thermo-chemical process, and helium gas is tentatively considered as the choice for the coolant. A hot gas duct (HGD) is a key component connecting the reactor pressure vessel and the intermediate heat exchanger (IHX) for the nuclear hydrogen system. The HGD is a unique component exclusively found in an HTR-module concept where a nuclear core and IHX are placed separately into two pressure vessels, which require a connecting duct between them. A coaxial double-tube type cross vessel is considered for the HGD structure of the nuclear hydrogen system because of its successive extensive experience. In this study, a structural pre-sizing for the primary HGD was carried out. These activities include a predecision on the geometric dimensions, a pre-evaluation on the strength, and a pre-selection on the material of the coaxial double-tube type cross vessel components. A predecision on the geometric dimensions was undertaken based on various engineering concepts, such as a constant flow velocity (CFV) model, a constant flow rate (CFR) model, a constant hydraulic head (CHH) model, and finally a heat balanced (HB) model. For the CFV model, CFR model, and CHH model, the HGD structure might be insensitive to a flow induced vibration (FIV) in the case where there are no pressure differences between the hot and cold helium regions. Also we compared the geometric dimensions from the various models.

  17. High Power Mid-IR Semiconductor Lasers for LADAR

    National Research Council Canada - National Science Library

    Lester, Luke

    2003-01-01

    The growing need for antimonide-based, room temperature, 2-5 micrometers, semiconductor lasers for trace gas spectroscopy, ultra-low loss communication, infrared countermeasures, and ladar motivated this work...

  18. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  19. The analysis for inventory of experimental reactor high temperature gas reactor type

    International Nuclear Information System (INIS)

    Sri Kuntjoro; Pande Made Udiyani

    2016-01-01

    Relating to the plan of the National Nuclear Energy Agency (BATAN) to operate an experimental reactor of High Temperature Gas Reactors type (RGTT), it is necessary to reactor safety analysis, especially with regard to environmental issues. Analysis of the distribution of radionuclides from the reactor into the environment in normal or abnormal operating conditions starting with the estimated reactor inventory based on the type, power, and operation of the reactor. The purpose of research is to analyze inventory terrace for Experimental Power Reactor design (RDE) high temperature gas reactor type power 10 MWt, 20 MWt and 30 MWt. Analyses were performed using ORIGEN2 computer code with high temperatures cross-section library. Calculation begins with making modifications to some parameter of cross-section library based on the core average temperature of 570 °C and continued with calculations of reactor inventory due to RDE 10 MWt reactor power. The main parameters of the reactor 10 MWt RDE used in the calculation of the main parameters of the reactor similar to the HTR-10 reactor. After the reactor inventory 10 MWt RDE obtained, a comparison with the results of previous researchers. Based upon the suitability of the results, it make the design for the reactor RDE 20MWEt and 30 MWt to obtain the main parameters of the reactor in the form of the amount of fuel in the pebble bed reactor core, height and diameter of the terrace. Based on the main parameter or reactor obtained perform of calculation to get reactor inventory for RDE 20 MWT and 30 MWT with the same methods as the method of the RDE 10 MWt calculation. The results obtained are the largest inventory of reactor RDE 10 MWt, 20 MWt and 30 MWt sequentially are to Kr group are about 1,00E+15 Bq, 1,20E+16 Bq, 1,70E+16 Bq, for group I are 6,50E+16 Bq, 1,20E+17 Bq, 1,60E+17 Bq and for groups Cs are 2,20E+16 Bq, 2,40E+16 Bq, 2,60E+16 Bq. Reactor inventory will then be used to calculate the reactor source term and it

  20. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  1. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  2. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  3. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  4. Effects of exhaust gas recirculation in diesel engines featuring late PCCI type combustion strategies

    International Nuclear Information System (INIS)

    D’Ambrosio, S.; Ferrari, A.

    2015-01-01

    Highlights: • The effects that a high EGR rate can have on PCCI type combustion strategies have been analyzed. • The dependence of engine emissions and combustion noise on EGR has been addressed. • The time histories of the main in-cylinder variables have been plotted for different EGR rates. - Abstract: The influence of exhaust gas recirculation (EGR) has been analyzed considering experimental results obtained from a Euro 5 diesel engine calibrated with an optimized pilot-main double injection strategy. The engine features a late premixed charge compression ignition (PCCI) type combustion mode. Different steady-state key-points that are representative of the engine application in a passenger car over the New European Driving Cycle (NEDC) have been studied. The engine was fully instrumented to obtain a complete overview of the most important variables. The pressure time history in the combustion chamber has been measured to perform calculations with single and three-zone combustion diagnostic models. These models allow the in-cylinder emissions and the temperature of the burned and unburned zones to be evaluated as functions of the crankshaft angle. The EGR mass fraction was experimentally varied within the 0–50% range. The results of the investigation have shown the influence that high EGR rates can have on intake and exhaust temperatures, in-cylinder pressure and heat release rate time histories, engine-out emissions (CO, HC, NO_x, soot), brake specific fuel consumption and combustion noise for a PCCI type combustion strategy. The outputs of the diagnostic models have been used to conduct a detailed analysis of the cause-and-effect relationships between the EGR rate variations and the engine performance. Finally, the effect of the EGR on the cycle-to-cycle variability of the engine torque has been experimentally investigated.

  5. Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

    International Nuclear Information System (INIS)

    Freedsman, J. J.; Watanabe, A.; Urayama, Y.; Egawa, T.

    2015-01-01

    The authors report on Al 2 O 3 /Al 0.85 In 0.15 N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al 2 O 3 as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al 2 O 3 /Al 0.85 In 0.15 N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics

  6. Solid-state NMR of inorganic semiconductors.

    Science.gov (United States)

    Yesinowski, James P

    2012-01-01

    Studies of inorganic semiconductors by solid-state NMR vary widely in terms of the nature of the samples investigated, the techniques employed to observe the NMR signal, and the types of information obtained. Compared with the NMR of diamagnetic non-semiconducting substances, important differences often result from the presence of electron or hole carriers that are the hallmark of semiconductors, and whose theoretical interpretation can be involved. This review aims to provide a broad perspective on the topic for the non-expert by providing: (1) a basic introduction to semiconductor physical concepts relevant to NMR, including common crystal structures and the various methods of making samples; (2) discussions of the NMR spin Hamiltonian, details of some of the NMR techniques and strategies used to make measurements and theoretically predict NMR parameters, and examples of how each of the terms in the Hamiltonian has provided useful information in bulk semiconductors; (3) a discussion of the additional considerations needed to interpret the NMR of nanoscale semiconductors, with selected examples. The area of semiconductor NMR is being revitalized by this interest in nanoscale semiconductors, the great improvements in NMR detection sensitivity and resolution that have occurred, and the current interest in optical pumping and spintronics-related studies. Promising directions for future research will be noted throughout.

  7. Transient photoconductivity in amorphous semiconductors

    International Nuclear Information System (INIS)

    Mpawenayo, P.

    1997-07-01

    Localized states in amorphous semiconductors are divided in disorder induced shallow trap levels and dangling bonds deep states. Dangling bonds are assumed here to be either neutral or charged and their energy distribution is a single gaussian. Here, it is shown analytically that transient photocurrent in amorphous semiconductors is fully controlled by charge carriers transitions between localized states for one part and tunneling hopping carriers on the other. Localized dangling bonds deep states act as non radiative recombination centres, while hopping tunnelling is assisted by the Coulomb interaction between defects sites. The half-width of defects distribution is the disorder parameter that determines the carrier hopping time between defects sites. The macroscopic time that explains the long decay response times observed will all types of amorphous semiconductors is duly thought to be temperature dependent. Basic equations developed by Longeaud and Kleider are solved for the general case of a semiconductor after photo-generation. It turns out that the transient photoconductivity decay has two components; one with short response times from carriers trap-release transitions between shallow levels and extended states and a hopping component made of inter-dependent exponentials whose time constants span in larger ranges depending on disorder. The photoconductivity hopping component appears as an additional term to be added to photocurrents derived from existing models. The results of the present study explain and complete the power law decay derived in the multiple trapping models developed 20 years ago only in the approximation of the short response time regime. The long response time regime is described by the hopping macroscopic time. The present model is verified for all samples of amorphous semiconductors known so far. Finally, it is proposed to improved the modulated photoconductivity calculation techniques by including the long-lasting hopping dark documents

  8. Synthesis and characterization of metal oxide semiconductors by a facile co-electroplating-annealing method and formation of ZnO/CuO pn heterojunctions with rectifying behavior

    Science.gov (United States)

    Turkdogan, Sunay; Kilic, Bayram

    2018-01-01

    We have developed a unique growth method and demonstrated the growth of CuO and ZnO semiconductor materials and the fabrication of their pn heterojunctions in ambient atmosphere. The pn heterojunctions were constructed using inherently p-type CuO and inherently n-type ZnO materials. Both p- and n-type semiconductors and pn heterojunctions were prepared using a simple but versatile growth method that relies on the transformation of electroplated Cu and Zn metals into CuO and ZnO semiconductors, respectively and is capable of a large-scale production desired in most of the applications. The structural, chemical, optical and electrical properties of the materials and junctions were investigated using various characterization methods and the results show that our growth method, materials and devices are quite promising to be utilized for various applications including but not limited to solar cells, gas/humidity sensors and photodetectors.

  9. A computer-assisted rock type data catalogue for gas formations; Ein rechnergestuetzter Gesteinsdatenkatalog fuer Gasformationen

    Energy Technology Data Exchange (ETDEWEB)

    Reitenbach, V.; Pusch, G.; Moeller, M.; Koll, S. [TU Clausthal (Germany). Inst. fuer Erdoel- und Erdgastechnik; Constantini, A.; Junker, A.; Anton, H. [RWE Dea AG, Hamburg (Germany)

    2007-09-13

    Modern reservoir management commonly requires versatile reservoir data which are neces-sary for integrated reservoir characterization, evaluation and development planning. The rock data necessary for numerical reservoir simulation studies often have to be collected from different sources, analysed and sorted with a considerable effort. In a framework of DGMK research program (DGMK project 593-9/4), the Institute of Petro-leum Engineering (Clausthal University of Technology) and RWE DEA AG have developed a new tool named Rock Data Catalogue, which is capable of managing large amounts of rock data more efficiently and deriving new specific correlations for European rock types. The use of Rock Data Catalogue can facilitate the essential input data generation and proc-essing procedure for reservoir simulation studies. The Rock Data Catalogue is comprised of a Data Base Module of digitalized reservoir rock data and an interactive Data Correlation Module. Both modules are built-up as an interface to common reservoir simulation software. The universal structure of the software also makes it possible to exchange the data with other rock data information systems. The Data Correlation Module implements a ''Decision-Structure'' module, which helps the reservoir engineer to select the rock data for analysis and correlation depending on its litho-facial type and permeability class. The Data Base Module enables a quick search of appro-priated data sets and their export into the correlation module. The open source data of the North German Rotliegend gas formations as well as the data of measurements on Rotliegend core samples performed at the ITE in course of the DGMK tight gas projects were implemented in the rock data base. Correlations of poro/perm data, two-phase flow and capillary pressure functions of the Rotliegend sandstones with the per-meability range between 20 and 0.01 mD are implemented in the rock data base and serve for quality checking of the

  10. An ALMA view of star formation efficiency suppression in early-type galaxies after gas-rich minor mergers

    Science.gov (United States)

    van de Voort, Freeke; Davis, Timothy A.; Matsushita, Satoki; Rowlands, Kate; Shabala, Stanislav S.; Allison, James R.; Ting, Yuan-Sen; Sansom, Anne E.; van der Werf, Paul P.

    2018-05-01

    Gas-rich minor mergers contribute significantly to the gas reservoir of early-type galaxies (ETGs) at low redshift, yet the star formation efficiency (SFE; the star formation rate divided by the molecular gas mass) appears to be strongly suppressed following some of these events, in contrast to the more well-known merger-driven starbursts. We present observations with the Atacama Large Millimeter/submillimeter Array (ALMA) of six ETGs, which have each recently undergone a gas-rich minor merger, as evidenced by their disturbed stellar morphologies. These galaxies were selected because they exhibit extremely low SFEs. We use the resolving power of ALMA to study the morphology and kinematics of the molecular gas. The majority of our galaxies exhibit spatial and kinematical irregularities, such as detached gas clouds, warps, and other asymmetries. These asymmetries support the interpretation that the suppression of the SFE is caused by dynamical effects stabilizing the gas against gravitational collapse. Through kinematic modelling we derive high velocity dispersions and Toomre Q stability parameters for the gas, but caution that such measurements in edge-on galaxies suffer from degeneracies. We estimate merger ages to be about 100 Myr based on the observed disturbances in the gas distribution. Furthermore, we determine that these galaxies lie, on average, two orders of magnitude below the Kennicutt-Schmidt relation for star-forming galaxies as well as below the relation for relaxed ETGs. We discuss potential dynamical processes responsible for this strong suppression of star formation surface density at fixed molecular gas surface density.

  11. Effect of gas type on foam film permeability and its implications for foam flow in porous media.

    Science.gov (United States)

    Farajzadeh, R; Muruganathan, R M; Rossen, W R; Krastev, R

    2011-10-14

    The aim of this paper is to provide a perspective on the effect of gas type on the permeability of foam films stabilized by different types of surfactant and to present a critical overview of the tracer gas experiments, which is the common approach to determine the trapped fraction of foam in porous media. In these experiments some part of the gas is replaced by a "tracer gas" during the steady-state stage of the experiments and trapped fraction of foam is determined by fitting the effluent data to a capacitance mass-transfer model. We present the experimental results on the measurement of the gas permeability of foam films stabilized with five surfactants (non-ionic, anionic and cationic) and different salt concentrations. The salt concentrations assure formation of either common black (CBF) or Newton black films (NBF). The experiments are performed with different single gasses. The permeability of the CBF is in general higher than that of the NBF. This behavior is explained by the higher density of the surfactant molecules in the NBF compared to that of CBF. It is also observed that the permeability coefficient, K(cm/s), of CBF and NBF for non-ionic and cationic surfactants are similar and K is insensitive to film thickness. Compared to anionic surfactants, the films made by the non-ionic surfactant have much lower permeability while the films made by the cationic surfactant have larger permeability. This conclusion is valid for all gasses. For all types of surfactant the gas permeability of foam film is largely dependent on the dissolution of gas in the surfactant solution and increases with increasing gas solubility in the bulk liquid. The measured values of K are consistent with rapid diffusion of tracer gasses through trapped gas adjacent to flowing gas in porous media, and difficulties in interpreting the results of tracer-foam experiments with conventional capacitance models. The implications of the results for foam flow in porous media and factors leading

  12. Characterization of gas tunnel type plasma sprayed hydroxyapatite-nanostructure titania composite coatings

    Science.gov (United States)

    Yugeswaran, S.; Kobayashi, A.; Ucisik, A. Hikmet; Subramanian, B.

    2015-08-01

    Hydroxyapatite (HA) can be coated onto metal implants as a ceramic biocompatible coating to bridge the growth between implants and human tissue. Meanwhile many efforts have been made to improve the mechanical properties of the HA coatings without affecting its bioactivity. In the present study, nanostructure titania (TiO2) was mixed with HA powder and HA-nanostructure TiO2 composite coatings were produced by gas tunnel type plasma spraying torch under optimized spraying conditions. For this purpose, composition of 10 wt% TiO2 + 90 wt% HA, 20 wt% TiO2 + 80 wt% HA and 30 wt% TiO2 + 70 wt% HA were selected as the feedstock materials. The phase, microstructure and mechanical properties of the coatings were characterized. The obtained results validated that the increase in weight percentage of nanostructure TiO2 in HA coating significantly increased the microhardness, adhesive strength and wear resistance of the coatings. Analysis of the in vitro bioactivity and cytocompatibility of the coatings were done using conventional simulated body fluid (c-SBF) solution and cultured green fluorescent protein (GFP) labeled marrow stromal cells (MSCs) respectively. The bioactivity results revealed that the composite coating has bio-active surface with good cytocompatibility.

  13. The study on a gas-coupled two-stage stirling-type pulse tube cryocooler

    Science.gov (United States)

    Wu, X. L.; Chen, L. B.; Zhu, X. S.; Pan, C. Z.; Guo, J.; Wang, J. J.; Zhou, Y.

    2017-12-01

    A two-stage gas-coupled Stirling-type pulse tube cryocooler (SPTC) driven by a linear dual-opposed compressor has been designed, manufactured and tested. Both of the stages adopted coaxial structure for compactness. The effect of a cold double-inlet at the second stage on the cooling performance was investigated. The test results show that the cold double-inlet will help to achieve a lower cooling temperature, but it is not conducive to achieving a higher cooling capacity. At present, without the cold double-inlet, the second stage has achieved a no-load temperature of 11.28 K and a cooling capacity of 620 mW/20 K with an input electric power of 450 W. With the cold double-inlet, the no-load temperature is lowered to 9.4 K, but the cooling capacity is reduced to 400 mW/20 K. The structure of the developed cryocooler and the influences of charge pressure, operating frequency and hot end temperature will also be introduced in this paper.

  14. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  15. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  16. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  17. Recommended safety procedures for the selection and use of demonstration-type gas discharge devices in schools

    International Nuclear Information System (INIS)

    1979-01-01

    A 1972 survey of 30 Ottawa secondary schools revealed a total of 347 actual or potential X-ray sources available in these schools. More than half of these sources were gas discharge tubes. Some gas discharge tubes, in particular the cold cathode type, can emit X-rays at significantly high levels. Unless such tubes are used carefully, and with regard for good radiation safety practices, they can result in exposures to students that are in excess of the maximum levels recommended by the International Commission on Radiological Protection. Several cases of the recommended dose being exceeded were found in the classes surveyed. This document has been prepared to assist science teachers and others using demonstration-type gas discharge devices to select and use such devices so as to present negligible risk to themselves and students. Useful information on safety procedures to be followed when performing demonstrations or experiments is included. (J.T.A.)

  18. Life-cycle assessment of semiconductors

    CERN Document Server

    Boyd, Sarah B

    2012-01-01

    Life-Cycle Assessment of Semiconductors presents the first and thus far only available transparent and complete life cycle assessment of semiconductor devices. A lack of reliable semiconductor LCA data has been a major challenge to evaluation of the potential environmental benefits of information technologies (IT). The analysis and results presented in this book will allow a higher degree of confidence and certainty in decisions concerning the use of IT in efforts to reduce climate change and other environmental effects. Coverage includes but is not limited to semiconductor manufacturing trends by product type and geography, unique coverage of life-cycle assessment, with a focus on uncertainty and sensitivity analysis of energy and global warming missions for CMOS logic devices, life cycle assessment of flash memory and life cycle assessment of DRAM. The information and conclusions discussed here will be highly relevant and useful to individuals and institutions. The book also: Provides a detailed, complete a...

  19. Solid state semiconductor detectorized survey meter

    International Nuclear Information System (INIS)

    Okamoto, Eisuke; Nagase, Yoshiyuki; Furuhashi, Masato

    1987-01-01

    Survey meters are used for measurement of gamma ray dose rate of the space and the surface contamination dencity that the atomic energy plant and the radiation facility etc. We have recently developed semiconductor type survey meter (Commercial name: Compact Survey Meter). This survey meter is a small-sized dose rate meter with excellent function. The special features are using semiconductor type detector which we have developed by our own technique, stablar wide range than the old type, long life, and easy to carry. Now we introduce the efficiency and the function of the survey meter. (author)

  20. Microscopic studies of the fate of charges in organic semiconductors: Scanning Kelvin probe measurements of charge trapping, transport, and electric fields in p- and n-type devices

    Science.gov (United States)

    Smieska, Louisa Marion

    Organic semiconductors could have wide-ranging applications in lightweight, efficient electronic circuits. However, several fundamental questions regarding organic electronic device behavior have not yet been fully addressed, including the nature of chemical charge traps, and robust models for injection and transport. Many studies focus on engineering devices through bulk transport measurements, but it is not always possible to infer the microscopic behavior leading to the observed measurements. In this thesis, we present scanning-probe microscope studies of organic semiconductor devices in an effort to connect local properties with local device behavior. First, we study the chemistry of charge trapping in pentacene transistors. Working devices are doped with known pentacene impurities and the extent of charge trap formation is mapped across the transistor channel. Trap-clearing spectroscopy is employed to measure an excitation of the pentacene charge trap species, enabling identification of the degradationrelated chemical trap in pentacene. Second, we examine transport and trapping in peryelene diimide (PDI) transistors. Local mobilities are extracted from surface potential profiles across a transistor channel, and charge injection kinetics are found to be highly sensitive to electrode cleanliness. Trap-clearing spectra generally resemble PDI absorption spectra, but one derivative yields evidence indicating variation in trap-clearing mechanisms for different surface chemistries. Trap formation rates are measured and found to be independent of surface chemistry, contradicting a proposed silanol trapping mechanism. Finally, we develop a variation of scanning Kelvin probe microscopy that enables measurement of electric fields through a position modulation. This method avoids taking a numeric derivative of potential, which can introduce high-frequency noise into the electric field signal. Preliminary data is presented, and the theoretical basis for electric field

  1. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  2. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  3. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  4. Semiconductor high-energy radiation scintillation detector

    International Nuclear Information System (INIS)

    Kastalsky, A.; Luryi, S.; Spivak, B.

    2006-01-01

    We propose a new scintillation-type detector in which high-energy radiation generates electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could reach its surface without tangible attenuation. We discuss two ways to accomplish this, one based on doping the semiconductor with shallow impurities of one polarity type, preferably donors, the other by heterostructure bandgap engineering. The proposed semiconductor scintillator combines the best properties of currently existing radiation detectors and can be used for both simple radiation monitoring, like a Geiger counter, and for high-resolution spectrography of the high-energy radiation. An important advantage of the proposed detector is its fast response time, about 1 ns, essentially limited only by the recombination time of minority carriers. Notably, the fast response comes without any degradation in brightness. When the scintillator is implemented in a qualified semiconductor material (such as InP or GaAs), the photo-detector and associated circuits can be epitaxially integrated on the scintillator slab and the structure can be stacked-up to achieve virtually any desired absorption capability

  5. Semiconductor electrolyte photovoltaic energy converter

    Science.gov (United States)

    Anderson, W. W.; Anderson, L. B.

    1975-01-01

    Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

  6. Spectroscopic analysis of optoelectronic semiconductors

    CERN Document Server

    Jimenez, Juan

    2016-01-01

    This book deals with standard spectroscopic techniques which can be used to analyze semiconductor samples or devices, in both, bulk, micrometer and submicrometer scale. The book aims helping experimental physicists and engineers to choose the right analytical spectroscopic technique in order to get specific information about their specific demands. For this purpose, the techniques including technical details such as apparatus and probed sample region are described. More important, also the expected outcome from experiments is provided. This involves also the link to theory, that is not subject of this book, and the link to current experimental results in the literature which are presented in a review-like style. Many special spectroscopic techniques are introduced and their relationship to the standard techniques is revealed. Thus the book works also as a type of guide or reference book for people researching in optical spectroscopy of semiconductors.

  7. Comparison of an Electronic Nose Based on Ultrafast Gas Chromatography, Comprehensive Two-Dimensional Gas Chromatography, and Sensory Evaluation for an Analysis of Type of Whisky

    Directory of Open Access Journals (Sweden)

    Paulina Wiśniewska

    2017-01-01

    Full Text Available Whisky is one of the most popular alcoholic beverages. There are many types of whisky, for example, Scotch, Irish, and American whisky (called bourbon. The whisky market is highly diversified, and, because of this, it is important to have a method which would enable rapid quality evaluation and authentication of the type of whisky. The aim of this work was to compare 3 methods: an electronic nose based on the technology of ultrafast gas chromatography (Fast-GC, comprehensive two-dimensional gas chromatography (GC × GC, and sensory evaluation. The selected whisky brands included 6 blended whiskies from Scotland, 4 blended whiskies from Ireland, and 4 bourbons produced in the USA. For data analysis, peak heights of chromatograms were used. The panelists who took part in sensory evaluations included 4 women and 4 men. The obtained data were analyzed by 2 chemometric methods: partial least squares discriminant analysis (PLS-DA and discrimination function analysis (DFA. E-nose and GC × GC allowed for differentiation between whiskies by type. Sensory analysis did not allow for differentiation between whiskies by type, but it allowed giving consumer preferences.

  8. Two types of the relation between the intensity and the life time of photoluminescence of core/shell semiconductor quantum dots: Important role of Coulomb field and tunneling transitions

    Energy Technology Data Exchange (ETDEWEB)

    Osad' ko, I. S., E-mail: osadko@isan.troitsk.ru [Institute for spectroscopy RAS, Troitsk, 142190 Moscow (Russian Federation)

    2014-10-28

    It has been recently found [Gh. Galland, Y. Ghosh, A. Steinbrück, M. Sykora, J. A. Hollingsworth, and V. I. Klimov, Nature (London) 479, 203 (2011)] that semiconductor core/shell nanocrystals (NCs) with blinking photoluminescence (PL) can be of “A” or “B” type. NCs of A-type exhibit correlation between the intensity of PL and the life time. In NCs of B-type such correlation is absent. Simple model based on combination of the charging model and the two-level system model is proposed for describing emissive properties of NCs of both types. The model invokes fluctuations of emission ability γ{sub em} of NC to explain the emissive properties of NCs of B-type. Our combined model is also in agreement with anticorrelation between the duration τ{sub off} of off intervals and PL life time t{sub off} in off intervals found recently for NCs of A-type in the experiment [A. A. Cordones, T. J. Bixby, and S. R. Leone, Nano Lett. 11, 3366 (2011)].

  9. Carrier concentration induced ferromagnetism in semiconductors

    International Nuclear Information System (INIS)

    Story, T.

    2007-01-01

    In semiconductor spintronics the key materials issue concerns ferromagnetic semiconductors that would, in particular, permit an integration (in a single multilayer heterostructure) of standard electronic functions of semiconductors with magnetic memory function. Although classical semiconductor materials, such as Si or GaAs, are nonmagnetic, upon substitutional incorporation of magnetic ions (typically of a few atomic percents of Mn 2+ ions) and very heavy doping with conducting carriers (at the level of 10 20 - 10 21 cm -3 ) a ferromagnetic transition can be induced in such diluted magnetic semiconductors (also known as semimagnetic semiconductors). In the lecture the spectacular experimental observations of carrier concentration induced ferromagnetism will be discussed for three model semiconductor crystals. p - Ga 1-x Mn x As currently the most actively studied and most perspective ferromagnetic semiconductor of III-V group, in which ferromagnetism appears due to Mn ions providing both local magnetic moments and acting as acceptor centers. p - Sn 1-x Mn x Te and p - Ge 1-x Mn x Te classical diluted magnetic semiconductors of IV-VI group, in which paramagnet-ferromagnet and ferromagnet-spin glass transitions are found for very high hole concentration. n - Eu 1-x Gd x Te mixed magnetic crystals, in which the substitution of Gd 3+ ions for Eu 2+ ions creates very high electron concentration and transforms antiferromagnetic EuTe (insulating compound) into ferromagnetic n-type semiconductor alloy. For each of these materials systems the key physical features will be discussed concerning: local magnetic moments formation, magnetic phase diagram as a function of magnetic ions and carrier concentration as well as Curie temperature and magnetic anisotropy engineering. Various theoretical models proposed to explain the effect of carrier concentration induced ferromagnetism in semiconductors will be briefly discussed involving mean field approaches based on Zener and RKKY

  10. Calculation of burnup and power dependence on fission gas released from PWR type reactor fuel element

    International Nuclear Information System (INIS)

    Edy-Sulistyono

    1996-01-01

    Burn up dependence of fission gas released and variation power analysis have been conducted using FEMXI-IV computer code program for Pressure Water Reactor Fuel During steady-state condition. The analysis result shows that the fission gas release is sensitive to the fuel temperature, the increasing of burn up and power in the fuel element under irradiation experiment

  11. Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures

    Science.gov (United States)

    Wang, Jiaming; Xu, Fujun; Zhang, Xia; An, Wei; Li, Xin-Zheng; Song, Jie; Ge, Weikun; Tian, Guangshan; Lu, Jing; Wang, Xinqiang; Tang, Ning; Yang, Zhijian; Li, Wei; Wang, Weiying; Jin, Peng; Chen, Yonghai; Shen, Bo

    2014-01-01

    Type-II band alignment structure is coveted in the design of photovoltaic devices and detectors, since it is beneficial for the transport of photogenerated carriers. Regrettably, for group-III-nitride wide bandgap semiconductors, all existing devices are limited to type-I heterostructures, owing to the unavailable of type-II ones. This seriously restricts the designing flexibility for optoelectronic devices and consequently the relevant performance of this material system. Here we show a brandnew type-II band alignment of the lattice-matched In0.17Al0.83N/GaN heterostructure from the perspective of both experimental observations and first-principle theoretical calculations. The band discontinuity is dominated by the conduction band offset ΔEC, with a small contribution from the valence band offset ΔEV which equals 0.1 eV (with being above). Our work may open up new prospects to realize high-performance III-Nitrides optoelectronic devices based on type-II energy band engineering. PMID:25283334

  12. Enhanced two dimensional electron gas transport characteristics in Al{sub 2}O{sub 3}/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

    Energy Technology Data Exchange (ETDEWEB)

    Freedsman, J. J., E-mail: freedy54@gmail.com; Watanabe, A.; Urayama, Y. [Research Center for Nano-Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Egawa, T., E-mail: egawa.takashi@nitech.ac.jp [Research Center for Nano-Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan)

    2015-09-07

    The authors report on Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al{sub 2}O{sub 3} as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

  13. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  14. Introduction to Semiconductor Devices

    Science.gov (United States)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  15. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  16. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  17. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  18. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  19. A unique metal-semiconductor interface and resultant electron transfer phenomenon

    OpenAIRE

    Taft, S. L.

    2012-01-01

    An unusual electron transfer phenomenon has been identified from an n-type semiconductor to Schottky metal particles, the result of a unique metal semiconductor interface that results when the metal particles are grown from the semiconductor substrate. The unique interface acts as a one-way (rectifying) open gateway and was first identified in reduced rutile polycrystalline titanium dioxide (an n-type semiconductor) to Group VIII (noble) metal particles. The interface significantly affects th...

  20. Thienoacene-based organic semiconductors.

    Science.gov (United States)

    Takimiya, Kazuo; Shinamura, Shoji; Osaka, Itaru; Miyazaki, Eigo

    2011-10-11

    Thienoacenes consist of fused thiophene rings in a ladder-type molecular structure and have been intensively studied as potential organic semiconductors for organic field-effect transistors (OFETs) in the last decade. They are reviewed here. Despite their simple and similar molecular structures, the hitherto reported properties of thienoacene-based OFETs are rather diverse. This Review focuses on four classes of thienoacenes, which are classified in terms of their chemical structures, and elucidates the molecular electronic structure of each class. The packing structures of thienoacenes and the thus-estimated solid-state electronic structures are correlated to their carrier transport properties in OFET devices. With this perspective of the molecular structures of thienoacenes and their carrier transport properties in OFET devices, the structure-property relationships in thienoacene-based organic semiconductors are discussed. The discussion provides insight into new molecular design strategies for the development of superior organic semiconductors. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. PdO Doping Tunes Band-Gap Energy Levels as Well as Oxidative Stress Responses to a Co3O4p-Type Semiconductor in Cells and the Lung

    Science.gov (United States)

    2014-01-01

    We demonstrate through PdO doping that creation of heterojunctions on Co3O4 nanoparticles can quantitatively adjust band-gap and Fermi energy levels to study the impact of metal oxide nanoparticle semiconductor properties on cellular redox homeostasis and hazard potential. Flame spray pyrolysis (FSP) was used to synthesize a nanoparticle library in which the gradual increase in the PdO content (0–8.9%) allowed electron transfer from Co3O4 to PdO to align Fermi energy levels across the heterojunctions. This alignment was accompanied by free hole accumulation at the Co3O4 interface and production of hydroxyl radicals. Interestingly, there was no concomitant superoxide generation, which could reflect the hole dominance of a p-type semiconductor. Although the electron flux across the heterojunctions induced upward band bending, the Ec levels of the doped particles showed energy overlap with the biological redox potential (BRP). This allows electron capture from the redox couples that maintain the BRP from −4.12 to −4.84 eV, causing disruption of cellular redox homeostasis and induction of oxidative stress. PdO/Co3O4 nanoparticles showed significant increases in cytotoxicity at 25, 50, 100, and 200 μg/mL, which was enhanced incrementally by PdO doping in BEAS-2B and RAW 264.7 cells. Oxidative stress presented as a tiered cellular response involving superoxide generation, glutathione depletion, cytokine production, and cytotoxicity in epithelial and macrophage cell lines. A progressive series of acute pro-inflammatory effects could also be seen in the lungs of animals exposed to incremental PdO-doped particles. All considered, generation of a combinatorial PdO/Co3O4 nanoparticle library with incremental heterojunction density allowed us to demonstrate the integrated role of Ev, Ec, and Ef levels in the generation of oxidant injury and inflammation by the p-type semiconductor, Co3O4. PMID:24673286

  2. PdO doping tunes band-gap energy levels as well as oxidative stress responses to a Co₃O₄ p-type semiconductor in cells and the lung.

    Science.gov (United States)

    Zhang, Haiyuan; Pokhrel, Suman; Ji, Zhaoxia; Meng, Huan; Wang, Xiang; Lin, Sijie; Chang, Chong Hyun; Li, Linjiang; Li, Ruibin; Sun, Bingbing; Wang, Meiying; Liao, Yu-Pei; Liu, Rong; Xia, Tian; Mädler, Lutz; Nel, André E

    2014-04-30

    We demonstrate through PdO doping that creation of heterojunctions on Co3O4 nanoparticles can quantitatively adjust band-gap and Fermi energy levels to study the impact of metal oxide nanoparticle semiconductor properties on cellular redox homeostasis and hazard potential. Flame spray pyrolysis (FSP) was used to synthesize a nanoparticle library in which the gradual increase in the PdO content (0-8.9%) allowed electron transfer from Co3O4 to PdO to align Fermi energy levels across the heterojunctions. This alignment was accompanied by free hole accumulation at the Co3O4 interface and production of hydroxyl radicals. Interestingly, there was no concomitant superoxide generation, which could reflect the hole dominance of a p-type semiconductor. Although the electron flux across the heterojunctions induced upward band bending, the E(c) levels of the doped particles showed energy overlap with the biological redox potential (BRP). This allows electron capture from the redox couples that maintain the BRP from -4.12 to -4.84 eV, causing disruption of cellular redox homeostasis and induction of oxidative stress. PdO/Co3O4 nanoparticles showed significant increases in cytotoxicity at 25, 50, 100, and 200 μg/mL, which was enhanced incrementally by PdO doping in BEAS-2B and RAW 264.7 cells. Oxidative stress presented as a tiered cellular response involving superoxide generation, glutathione depletion, cytokine production, and cytotoxicity in epithelial and macrophage cell lines. A progressive series of acute pro-inflammatory effects could also be seen in the lungs of animals exposed to incremental PdO-doped particles. All considered, generation of a combinatorial PdO/Co3O4 nanoparticle library with incremental heterojunction density allowed us to demonstrate the integrated role of E(v), E(c), and E(f) levels in the generation of oxidant injury and inflammation by the p-type semiconductor, Co3O4.

  3. Mesoscopic spin Hall effect in semiconductor nanostructures

    Science.gov (United States)

    Zarbo, Liviu

    The spin Hall effect (SHE) is a name given to a collection of diverse phenomena which share two principal features: (i) longitudinal electric current flowing through a paramagnetic semiconductor or metallic sample leads to transverse spin current and spin accumulation of opposite sign at opposing lateral edges; (ii) SHE does not require externally applied magnetic field or magnetic ordering in the equilibrium state of the sample, instead it relies on the presence of spin-orbit (SO) couplings within the sample. This thesis elaborates on a new type of phenomenon within the SHE family, predicted in our recent studies [Phys. Rev. B 72, 075361 (2005); Phys. Rev. Lett. 95, 046601 (2005); Phys. Rev. B 72, 075335 (2005); Phys. Rev. B 73 , 075303 (2006); and Europhys. Lett. 77, 47004 (2007)], where pure spin current flows through the transverse electrodes attached to a clean finitesize two-dimensional electron gas (2DEG) due to unpolarized charge current injected through its longitudinal leads. If transverse leads are removed, the effect manifests as nonequilibrium spin Hall accumulation at the lateral edges of 2DEG wires. The SO coupling driving this SHE effect is of the Rashba type, which arises due to structural inversion asymmetry of semiconductor heterostructure hosting the 2DEG. We term the effect "mesoscopic" because the spin Hall currents and accumulations reach optimal value in samples of the size of the spin precession length---the distance over which the spin of an electron precesses by an angle pi. In strongly SO-coupled structures this scale is of the order of ˜100 nm, and, therefore, mesoscopic in the sense of being much larger than the characteristic microscopic scales (such as the Fermi wavelength, screening length, or the mean free path in disordered systems), but still much smaller than the macroscopic ones. Although the first theoretical proposal for SHE, driven by asymmetry in SO-dependent scattering of spin-up and spin-down electrons off impurities

  4. Separation of Gas Mixtures by New Type of Membranes – Dynamic Liquid Membranes.

    Czech Academy of Sciences Publication Activity Database

    Setničková, Kateřina; Šíma, Vladimír; Petričkovič, Roman; Řezníčková Čermáková, Jiřina; Uchytil, Petr

    2016-01-01

    Roč. 160, FEB 29 (2016), s. 132-135 ISSN 1383-5866 Institutional support: RVO:67985858 Keywords : gas separation * liquid membrane * methane Subject RIV: CI - Industrial Chemistry, Chemical Engineering Impact factor: 3.359, year: 2016

  5. Infra-Red Gas Analysers of Liquid Crystal Type for Environmental Monitoring

    Directory of Open Access Journals (Sweden)

    V. I. Nazarov

    2004-01-01

    Full Text Available The paper reveals an opportunity to use infra-red gas analysers on the basis of the developed dichroic liquid crystal cells for investigation of absorption bands of various gases in the near infrared spectral region.

  6. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  7. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  8. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  9. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  10. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  11. cGAS Senses Human Cytomegalovirus and Induces Type I Interferon Responses in Human Monocyte-Derived Cells.

    Directory of Open Access Journals (Sweden)

    Jennifer Paijo

    2016-04-01

    Full Text Available Human cytomegalovirus (HCMV infections of healthy individuals are mostly unnoticed and result in viral latency. However, HCMV can also cause devastating disease, e.g., upon reactivation in immunocompromised patients. Yet, little is known about human immune cell sensing of DNA-encoded HCMV. Recent studies indicated that during viral infection the cyclic GMP/AMP synthase (cGAS senses cytosolic DNA and catalyzes formation of the cyclic di-nucleotide cGAMP, which triggers stimulator of interferon genes (STING and thus induces antiviral type I interferon (IFN-I responses. We found that plasmacytoid dendritic cells (pDC as well as monocyte-derived DC and macrophages constitutively expressed cGAS and STING. HCMV infection further induced cGAS, whereas STING expression was only moderately affected. Although pDC expressed particularly high levels of cGAS, and the cGAS/STING axis was functional down-stream of STING, as indicated by IFN-I induction upon synthetic cGAMP treatment, pDC were not susceptible to HCMV infection and mounted IFN-I responses in a TLR9-dependent manner. Conversely, HCMV infected monocyte-derived cells synthesized abundant cGAMP levels that preceded IFN-I production and that correlated with the extent of infection. CRISPR/Cas9- or siRNA-mediated cGAS ablation in monocytic THP-1 cells and primary monocyte-derived cells, respectively, impeded induction of IFN-I responses following HCMV infection. Thus, cGAS is a key sensor of HCMV for IFN-I induction in primary human monocyte-derived DC and macrophages.

  12. Catalytic removal of phenol from gas streams by perovskite-type catalysts.

    Science.gov (United States)

    Chen, Dai Ling; Pan, Kuan Lun; Chang, Moo Been

    2017-06-01

    Three perovskite-type catalysts prepared by citric acid method are applied to remove phenol from gas streams with the total flow rate of 300mL/min, corresponding to a GHSV of 10,000/hr. LaMnO 3 catalyst is first prepared and further partially substituted with Sr and Cu to prepare La 0.8 Sr 0.2 MnO 3 and La 0.8 Sr 0.2 Mn 0.8 Cu 0.2 O 3 , and catalytic activities and fundamental characteristics of these three catalysts are compared. The results show that phenol removal efficiency achieved with La 0.8 Sr 0.2 Mn 0.8 Cu 0.2 O 3 reaches 100% with the operating temperature of 200°C and the rate of mineralization at 300°C is up to 100%, while the phenol removal efficiencies achieved with La 0.8 Sr 0.2 MnO 3 and LaMnO 3 are up to 100% with the operating temperature of 300°C and 400°C, respectively. X-ray photoelectron spectroscopy (XPS) analysis shows that the addition of Sr and Cu increases the lattice oxygen of La 0.8 Sr 0.2 Mn 0.8 Cu 0.2 O 3 , and further increases mobility or availability of lattice oxygen. The results indicate that La 0.8 Sr 0.2 Mn 0.8 Cu 0.2 O 3 has the best activity for phenol removal among three catalysts prepared and the catalytic activity of phenol oxidation is enhanced by the introduction of Sr and Cu into LaMnO 3 . Apparent activation energy of 48kJ/mol is calculated by Mars-Van Krevelen Model for phenol oxidation with La 0.8 Sr 0.2 Mn 0.8 Cu 0.2 O 3 as catalyst. Copyright © 2016. Published by Elsevier B.V.

  13. Risk, probability and uncertainty in the calculations of gas cooled reactor of PBMR type. Part 2

    International Nuclear Information System (INIS)

    Serbanescu, Dan

    2004-01-01

    The paper presents the main conclusions of the insights to a cooled gas reactor from the perspective of the following notions: probability, uncertainty, entropy and risk. Some results of the on-going comparison between the insights obtained from three models and approaches are presented. The approaches consider the Pebble Bed Module Reactor (PBMR) NPP as a thermodynamic installation and as hierarchical system with or without considering the information exchange between its various levels. The existing model was a basis for a PRA going on in phases for PBMR. In the first part of this paper results from phase II of this PRA were presented. Further activities going on in the preparation for phase II PRA and for the development of a specific application of using PRA during the design phases for PBMR are undergoing with some preliminary results and conclusions. However, for the purposes of this paper and the comparative review of various models in the part two one presents the risk model (model B) based on the assumption and ideas laid down at the basis of the future inter-comparison of this model with other plant models. The assumptions concern: the uncertainties for the quantification of frequencies; list of initiated events; interfaces with the deterministic calculation; integrated evaluation of all the plant states; risk of the release of radionuclide; the balance between the number and function of the active systems and the passive systems; systems interdependencies in PBMR PRA; use of PRA for the evaluation of the impact of various design changes on plant risk. The model B allows basically evaluating the level of risk of the plant by calculating it as a result of acceptance challenge to the plant. By using this model the departure from a reference state is given by the variation in the risk metrics adopted for the study. The paper present also the synergetic model (model C). The evaluation of risk in the model C is considering also the information process. The

  14. Submillimetre wave spectroscopy of semiconductors in high magnetic fields

    International Nuclear Information System (INIS)

    Maan, J.C.

    1979-01-01

    Two types of cyclotron resonance studies with far infrared radiation and at high magnetic fields in semiconductors are discussed. Firstly, the phenomenon of the change in the static conductivity at cyclotron resonance conditions in pure semiconductors, in this case n-GaAs, is investigated. Secondly, the results of cyclotron resonance experiments in an n-InAs-GaSb superlattice are discussed. (Auth.)

  15. Beat-wave generation of plasmons in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1995-08-01

    It is shown that in semiconductor plasmas, it is possible to generate large amplitude plasma waves by the beating of two laser beams with frequency difference close to the plasma frequency. For narrow gap semiconductor (for example n-type InSb), the system can simulate the physics underlying beat wave generation in relativistic gaseous plasmas. (author). 7 refs

  16. Pengaruh Sistem Pengapian Terhadap Produk Gas Buang yang Dihasilkan oleh Motor Toyota Type 5K

    Directory of Open Access Journals (Sweden)

    Paryono Paryono

    2009-02-01

    Full Text Available Salah platina dan elektronik pada satu faktor yang menyebabkan polusi udara di sekitar kita adalah gas buang hasil pembakaran bahan bakar dan udara yang ditimbulkan oleh banyaknya kendaraan di jalan raya. Selain itu dalam rangka era globalisasi semua produsen kendaraan bermotor dituntut untuk bersaing lebih ketat dalam memproduksi kendaraan yang praktis, ekonomis, dan selalu memperhatikan aspek lingkungan. Tujuan penelitian ini adalah untuk mengetahui perbedaan produk emisi gas buang yang teridiri dari carbon hidrogen, carbon monoksida, dan oksigen yang dihasilkan oleh kendaraan bermotor Toyota 5K yang menggunakan sistem pengapian saat putaran rendah, menengah, dan tinggi. Sebagai objek penelitian digunakan motor Toyota 5K. Hasil yang diperoleh dari pengujian menunjukkan bahwa putaran motor dan sistem pengapian ada iteraksi yang signifikan dengan F rasio = 96,966 pada p < 0,05 terhadap emisi gas buang HC dan F rasio = 12, 801 pada p < 0,05 terhadap emisi gas buang CO. Hal ini berarti bahwa pada berbagai putaran motor, produk emisi gas buang paa sistem pengapian elektronik lebih rendah daripada sistem pengapian konvensional.

  17. Bistable amphoteric centers in semiconductors

    International Nuclear Information System (INIS)

    Nikitina, A. G.; Zuev, V. V.

    2008-01-01

    It is shown that, at thermodynamic equilibrium, the release of charge carriers from the localized states of bistable amphoteric centers into quasi-free states depends on the degree of compensation. This brings about different functional dependences of the concentration of free charge carriers on temperature. It is found that, in uncompensated semiconductors, the concentration of free charge carriers follows the same dependence in the case of bistable amphoteric centers and bistable amphoteric U - centers, although the distributions of charge carriers over the charge states and configurations are different for these types of centers. The results can be used for interpreting various experimental data insufficiently explained in the context of the traditional approach

  18. Properties and growth peculiarities of Si{sub 0.30}Ge{sub 0.70} stressor integrated in 14 nm fin-based p-type metal-oxide-semiconductor field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Hikavyy, A., E-mail: Andriy.Hikavyy@imec.be; Rosseel, E.; Kubicek, S.; Mannaert, G.; Favia, P.; Bender, H.; Loo, R.; Horiguchi, N.

    2016-03-01

    Integration of Si{sub 0.30}Ge{sub 0.70} in the Source/Drain (S/D) areas of metal oxide semiconductor transistors built according to 14 nm technological node rules has been shown. SiGe properties and growth peculiarities are presented and elaborated. In order to preserve the fin structures during a pre-epitaxy surface preparation, the H{sub 2} bake pressure had to be increased to 19,998 Pa at 800 °C. Influence of this bake on the Si recess in the S/D areas is presented. Excellent quality of both the raised and the embedded Si{sub 0.30}Ge{sub 0.70} was demonstrated by transmission electron microscopy inspections. Energy-dispersive X-ray spectroscopy measurement showed two stages of SiGe growth for the embedded case: first with a lower Ge content at the beginning of the deposition until the (111) facets are formed, and second with a higher Ge content which is governed by the growth on (111) planes. Nano-beam diffraction analysis showed that SiGe grown in the S/D areas of p-type metal-oxide-semiconductor field-effect transistor is fully elastically relaxed in the direction across the fin and partially strained along the fin. Finally, a strain accumulation effect in the chain of transistors has been observed. - Highlights: • Si{sub 0.30}Ge{sub 0.70} stressor has been implemented in the 14 nm technology node CMOS flow. • Embedded and raised variants have been investigated. • High Si{sub 0.30}Ge{sub 0.70} quality was confirmed. • Si{sub 0.30}Ge{sub 0.70} layer is elastically relaxed across the fin direction. • Partial stress presence and stress accumulation effect were observed.

  19. Rare resource supply crisis and solution technology for semiconductor manufacturing

    Science.gov (United States)

    Fukuda, Hitomi; Hu, Sophia; Yoo, Youngsun; Takahisa, Kenji; Enami, Tatsuo

    2016-03-01

    There are growing concerns over future environmental impact and earth resource shortage throughout the world and in many industries. Our semiconductor industry is not excluded. "Green" has become an important topic as production volume become larger and more powerful. Especially, the rare gases are widely used in semiconductor manufacturing because of its inertness and extreme chemical stability. One major component of an Excimer laser system is Neon. It is used as a buffer gas for Argon (Ar) and Krypton (Kr) gases used in deep ultraviolet (DUV) lithography laser systems. Since Neon gas accounting for more than 96% of the laser gas mixture, a fairly large amount of neon gas is consumed to run these DUV lasers. However, due to country's instability both in politics and economics in Ukraine, the main producer of neon gas today, supply reduction has become an issue and is causing increasing concern. This concern is not only based on price increases, but has escalated to the point of supply shortages in 2015. This poses a critical situation for the semiconductor industry, which represents the leading consumer of neon gas in the world. Helium is another noble gas used for Excimer laser operation. It is used as a purge gas for optical component modules to prevent from being damaged by active gases and impurities. Helium has been used in various industries, including for medical equipment, linear motor cars, and semiconductors, and is indispensable for modern life. But consumption of helium in manufacturing has been increased dramatically, and its unstable supply and price rise has been a serious issue today. In this article, recent global supply issue of rare resources, especially Neon gas and Helium gas, and its solution technology to support semiconductor industry will be discussed.

  20. New Icosahedral Boron Carbide Semiconductors

    Science.gov (United States)

    Echeverria Mora, Elena Maria

    Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto

  1. Volatile organometallic and semiconductor materials

    International Nuclear Information System (INIS)

    Dickson, R.S.

    1991-01-01

    This article reports on a project concerned with the metal organic chemical vapour deposition (MOCVD) of mercury-cadmium telluride (MCT) undertaken by a research consortium based in the Clayton area involving Monash University Chemistry Department, Telecom Research Laboratories, and CSIRO Division of Material Sciences and Technology. An M.R. Semicon 226 MOCVD reactor, operating near atmospheric presure with hydrogen carrier gas has been used. Most applications of MCT are direct consequence of its responsiveness to radiation in infrared region spectrum. The main aims of the project were to prepare and assess a range of volatile organometallics that might find use as a dopant sources for MCT, to prepare and study the properties of a range of different lanthanide complexes for MOCVD applications and to fully characterize the semiconductor wafers after growth. 19 refs., 3 figs

  2. Overview of experimental measurements in a generic can-type gas turbine combustor

    CSIR Research Space (South Africa)

    Meyers, BC

    2009-11-01

    Full Text Available Due to CFD Shortfalls, experimental data on gas turbine combustors is required to obtain insight into the combustion and flow mechanisms as well as for simulation and model validation and evaluation. The temperature and velocity fields of a generic...

  3. Preparative semiconductor photoredox catalysis: An emerging theme in organic synthesis

    Directory of Open Access Journals (Sweden)

    David W. Manley

    2015-09-01

    Full Text Available Heterogeneous semiconductor photoredox catalysis (SCPC, particularly with TiO2, is evolving to provide radically new synthetic applications. In this review we describe how photoactivated SCPCs can either (i interact with a precursor that donates an electron to the semiconductor thus generating a radical cation; or (ii interact with an acceptor precursor that picks up an electron with production of a radical anion. The radical cations of appropriate donors convert to neutral radicals usually by loss of a proton. The most efficient donors for synthetic purposes contain adjacent functional groups such that the neutral radicals are resonance stabilized. Thus, ET from allylic alkenes and enol ethers generated allyl type radicals that reacted with 1,2-diazine or imine co-reactants to yield functionalized hydrazones or benzylanilines. SCPC with tertiary amines enabled electron-deficient alkenes to be alkylated and furoquinolinones to be accessed. Primary amines on their own led to self-reactions involving C–N coupling and, with terminal diamines, cyclic amines were produced. Carboxylic acids were particularly fruitful affording C-centered radicals that alkylated alkenes and took part in tandem addition cyclizations producing chromenopyrroles; decarboxylative homo-dimerizations were also observed. Acceptors initially yielding radical anions included nitroaromatics and aromatic iodides. The latter led to hydrodehalogenations and cyclizations with suitable precursors. Reductive SCPC also enabled electron-deficient alkenes and aromatic aldehydes to be hydrogenated without the need for hydrogen gas.

  4. Method of doping a semiconductor

    International Nuclear Information System (INIS)

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  5. Onset of itinerant ferromagnetism associated with semiconductor ...

    Indian Academy of Sciences (India)

    In this paper, the magnetic and transport properties of the TiNb1−CoSn solid solution compounds with half Heusler cubic MgAgAs-type structure have been studied. This work shows the onset of ferromagnetism associated with a semiconductor to metal transition. The transition occurs directly from ferromagnetic metal to ...

  6. Hyperentangled photon sources in semiconductor waveguides

    DEFF Research Database (Denmark)

    Kang, Dongpeng; Helt, L. G.; Zhukovsky, Sergei

    2014-01-01

    We propose and analyze the performance of a technique to generate mode and polarization hyperentangled photons in monolithic semiconductor waveguides using two concurrent type-II spontaneous parametric down-conversion (SPDC) processes. These two SPDC processes are achieved by waveguide engineering...

  7. Semiconductor devices for all-optical regeneration

    DEFF Research Database (Denmark)

    Öhman, Filip; Bischoff, Svend; Tromborg, Bjarne

    2003-01-01

    We review different implementations of semiconductor devices for all-optical regeneration. A general model will be presented for all-optical regeneration in fiber links, taking into consideration the trade-off between non-linearity and noise. Furthermore we discuss a novel regenerator type, based...

  8. Optical Properties of Semiconductor Quantum Dots

    NARCIS (Netherlands)

    Perinetti, U.

    2011-01-01

    This thesis presents different optical experiments performed on semiconductor quantum dots. These structures allow to confine a small number of electrons and holes to a tiny region of space, some nm across. The aim of this work was to study the basic properties of different types of quantum dots

  9. Basic processes and scintillator and semiconductor detectors

    International Nuclear Information System (INIS)

    Bourgeois, C.

    1994-01-01

    In the following course, the interaction of heavy charged particles, electrons and Γ with matter is represented. Two types of detectors are studied, organic and inorganic scintillators and semiconductors. The signal formation is analysed. (author). 13 refs., 48 figs., 5 tabs

  10. Two dimensional tunable photonic crystals and n doped semiconductor materials

    International Nuclear Information System (INIS)

    Elsayed, Hussein A.; El-Naggar, Sahar A.; Aly, Arafa H.

    2015-01-01

    In this paper, we theoretically investigate the effect of the doping concentration on the properties of two dimensional semiconductor photonic band structures. We consider two structures; type I(II) that is composed of n doped semiconductor (air) rods arranged into a square lattice of air (n doped semiconductor). We consider three different shapes of rods. Our numerical method is based on the frequency dependent plane wave expansion method. The numerical results show that the photonic band gaps in type II are more sensitive to the changes in the doping concentration than those of type I. In addition, the width of the gap of type II is less sensitive to the shape of the rods than that of type I. Moreover, the cutoff frequency can be strongly tuned by the doping concentrations. Our structures could be of technical use in optical electronics for semiconductor applications

  11. Tunneling emission of electrons from semiconductors' valence bands in high electric fields

    International Nuclear Information System (INIS)

    Kalganov, V. D.; Mileshkina, N. V.; Ostroumova, E. V.

    2006-01-01

    Tunneling emission currents of electrons from semiconductors to vacuum (needle-shaped GaAs photodetectors) and to a metal (silicon metal-insulator-semiconductor diodes with a tunneling-transparent insulator layer) are studied in high and ultrahigh electric fields. It is shown that, in semiconductors with the n-type conductivity, the major contribution to the emission current is made by the tunneling emission of electrons from the valence band of the semiconductor, rather than from the conduction band

  12. Gas flow research at a plane screw type machine model. Pt. 2; Gasspaltstroemungen in einem ebenen Schraubenmaschinenmodell. T. 2

    Energy Technology Data Exchange (ETDEWEB)

    Kauder, K.; Sachs, R. [Dortmund Univ. (Germany). FG Fluidenergiemaschinen

    1998-12-31

    Gas flows in screw-type machines are effecting the energy conversion of the machine by the leakage mass flows and entropy flows inside the machine. The profile meshing clearance and the housing gap have an essential influence. Here the gas flow at the housing gap with non moving gap bounds is investigated. The used and developed measuring and image analysis technique is explained. Qualitative Schlieren pictures of the flow at three different tooth tips, i.e. gap styles are following to enable a comparison of the flow shapes. The application of a plane screw type machine model with moving gap bounds will be meant to be a contribution towards the investigation of the gas flow conditions in the gaps. (orig.) [Deutsch] Gasspaltstroemungen in Schraubenmaschinen wirken als Leckmassen- und Entropiestroeme erheblich auf die Energiewandlungsguete der Maschine. Besonderen Einfluss haben der Profileingriffs- sowie der Gehaeusespalt. In diesem Beitrag wird die Gehaeusespaltstroemung am Nebenrotor mit feststehender Stroemungsberandung untersucht. Nach Erlaeuterungen zur verwendeten und entwickelten Mess- und Bildverarbeitungstechnik folgen qualitative Schlierenbilder der Stroemung an drei unterschiedlichen Zahnkopf- und damit Spaltformen, die einen Vergleich der Stroemungsformen ermoeglichen. Der naechste Schritt zur Klaerung der Stroemungsverhaeltnisse in den Spalten besteht aus der Einfuehrung eines ebenen Schraubenmaschinenmodells mit drehenden Rotorscheiben. (orig.)

  13. Semiconductor saturable absorbers for ultrafast terahertz signals

    DEFF Research Database (Denmark)

    Hoffmann, Matthias C.; Turchinovich, Dmitry

    2010-01-01

    states, due to conduction band onparabolicity and scattering into satellite valleys in strong THz fields. Saturable absorber parameters, such as linear and nonsaturable transmission, and saturation fluence, are extracted by fits to a classic saturable absorber model. Further, we observe THz pulse......We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP, and Ge in the terahertz THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of semiconductors at high electron momentum...

  14. Ion implantation methods for semiconductor substrates

    International Nuclear Information System (INIS)

    Matsushita, T.; Mamine, T.; Hayashi, H.; Nishiyama, K.

    1980-01-01

    A method of ion implantation for controlling the life time of minority carriers in a semiconductor substrate and hence to reduce the temperature dependency of the life time, comprises implanting iron ions into an N type semiconductor substrate with a dosage of 10 10 to 10 15 ions cm -2 , and then heat-treating the implanted substrate at 850 0 to 1250 0 C. The method is applicable to the production of diodes, transistors, Si controlled rectifiers and gate controlled switching devices. (author)

  15. Ruddlesden-Popper compounds (SrO)(LaFeO3)n (n = 1 and 2) as p-type semiconductors for photocatalytic hydrogen production

    International Nuclear Information System (INIS)

    Chen, Hongmei; Sun, Xiaoqin; Xu, Xiaoxiang

    2017-01-01

    Graphical abstract: Two layered ferrites LaSrFeO 4 and La 2 SrFe 2 O 7 have been investigated which demonstrate interesting p-type semconductivity and efficient hydrogen production from water. Display Omitted -- Abstract: Here we report two Ruddlesden-Popper type ferrite perovskites (SrO)(LaFeO 3 ) n (n = 1 and 2) which demonstrate p-type semiconductivity. Their crystal structure, optical absorption and other physicochemical properties have been systematically explored. Our results show that both ferrites crystallize in tetragonal symmetry with structural lamination along c axis. Efficient photocatalytic hydrogen production has been achieved for both samples under full range and visible light illumination. Better performance is noticed for LaSrFeO 4 with apparent quantum efficiency approaches 0.31% and 0.19% under full range and visible light illumination, respectively. The p-type semiconductivity is verified by their cathodic photocurrent as well as negative Mott-Schottky slop during Photoelectrochemical measurement. The relative lower activity for La 2 SrFe 2 O 7 compared to LaSrFeO 4 is likely due to its higher defect concentration which facilitates charge recombination. Both compounds exhibit anisotropic phenomenon for charge migrations according to theoretical calculations. Their p-type semiconductivity, strong visible light absorption, chemical inertness and high abundance of constituent elements signify promising applications in the field of solar energy conversion and optoelectronics.

  16. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  17. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  18. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  19. Photoelectronic properties of semiconductors

    CERN Document Server

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  20. Beam tests of 'SPACAL' type modules for a high pressure gas calorimeter

    International Nuclear Information System (INIS)

    Konstantinov, V.F.; Krasnokutskij, R.N.; Shuvalov, R.S.; Solodkov, A.A.; Starchenko, E.A.; Sushkov, V.V.; Zajtsev, A.M.; Dzhelyadin, R.I.; Kopikov, S.V.; Solov'yanov, O.V.

    1993-01-01

    High-pressure gas modules with cylindrical ionization chambers for a Very Forward Calorimeter are constructed and tested in the IHEP U-70 electron beam. The amplifiers are used in a remote mode (3 m long cables). The module performance at small angles is tested in the energy range of 10-30 GeV using different gas mixtures like Ar + CH 4 , Ar + CF 4 and pure CF 4 at the pressure of 20-40 Atm. The best value of energy resolution equal to 18% is reached at the angle of 5.7 deg for 30 GeV electrons. The design is found to be adequate for future use in ATLAS/LHC. 24 refs., 10 figs

  1. A Thieno[2,3-b]pyridine-Flanked Diketopyrrolopyrrole Polymer as an n-Type Polymer Semiconductor for All-Polymer Solar Cells and Organic Field-Effect Transistors

    KAUST Repository

    Chen, Hung-Yang

    2017-12-28

    A novel fused heterocycle-flanked diketopyrrolopyrrole (DPP) monomer, thieno[2,3-b]pyridine diketopyrrolopyrrole (TPDPP), was designed and synthesized. When copolymerized with 3,4-difluorothiophene using Stille coupling polymerization, the new polymer pTPDPP-TF possesses a highly planar conjugated polymer backbone due to the fused thieno[2,3-b]pyridine flanking unit that effectively alleviates the steric hindrance with both the central DPP core and the 3,4-difluorothiophene repeat unit. This new polymer exhibits a high electron affinity (EA) of −4.1 eV and was successfully utilized as an n-type polymer semiconductor for applications in organic field-effect transistors (OFETs) and all polymer solar cells. A promising n-type charge carrier mobility of 0.1 cm2 V–1 s–1 was obtained in bottom-contact, top-gate OFETs, and a power conversion efficiency (PCE) of 2.72% with a high open-circuit voltage (VOC) of 1.04 V was achieved for all polymer solar cells using PTB7-Th as the polymer donor.

  2. A Thieno[2,3-b]pyridine-Flanked Diketopyrrolopyrrole Polymer as an n-Type Polymer Semiconductor for All-Polymer Solar Cells and Organic Field-Effect Transistors

    KAUST Repository

    Chen, Hung-Yang; Nikolka, Mark; Wadsworth, Andrew; Yue, Wan; Onwubiko, Ada; Xiao, Mingfei; White, Andrew J. P.; Baran, Derya; Sirringhaus, Henning; McCulloch, Iain

    2017-01-01

    A novel fused heterocycle-flanked diketopyrrolopyrrole (DPP) monomer, thieno[2,3-b]pyridine diketopyrrolopyrrole (TPDPP), was designed and synthesized. When copolymerized with 3,4-difluorothiophene using Stille coupling polymerization, the new polymer pTPDPP-TF possesses a highly planar conjugated polymer backbone due to the fused thieno[2,3-b]pyridine flanking unit that effectively alleviates the steric hindrance with both the central DPP core and the 3,4-difluorothiophene repeat unit. This new polymer exhibits a high electron affinity (EA) of −4.1 eV and was successfully utilized as an n-type polymer semiconductor for applications in organic field-effect transistors (OFETs) and all polymer solar cells. A promising n-type charge carrier mobility of 0.1 cm2 V–1 s–1 was obtained in bottom-contact, top-gate OFETs, and a power conversion efficiency (PCE) of 2.72% with a high open-circuit voltage (VOC) of 1.04 V was achieved for all polymer solar cells using PTB7-Th as the polymer donor.

  3. Demand-type gas supply system for rocket borne thin-window proportional counters

    Science.gov (United States)

    Acton, L. W.; Caravalho, R.; Catura, R. C.; Joki, E. G.

    1977-01-01

    A simple closed loop control system has been developed to maintain the gas pressure in thin-window proportional counters during rocket flights. This system permits convenient external control of detector pressure and system flushing rate. The control system is activated at launch with the sealing of a reference volume at the existing system pressure. Inflight control to plus or minus 2 torr at a working pressure of 760 torr has been achieved on six rocket flights.

  4. Preparation of gas diffusion electrodes for high temperature PEM-type fuel cells

    Czech Academy of Sciences Publication Activity Database

    Mazur, P.; Mališ, J.; Paidar, M.; Schauer, Jan; Bouzek, K.

    2010-01-01

    Roč. 14, 1-3 (2010), s. 101-105 ISSN 1944-3994. [PERMEA 2009. Prague, 07.06.2009-11.06.2009] R&D Projects: GA ČR GA203/08/0465 Institutional research plan: CEZ:AV0Z40500505 Keywords : gas diffusion electrode * polymer electrolyte * ionic liquid Subject RIV: CD - Macromolecular Chemistry Impact factor: 0.752, year: 2010

  5. Delayed or No Feedback? Gas Outflows in Type 2 AGNs. III

    Energy Technology Data Exchange (ETDEWEB)

    Woo, Jong-Hak; Son, Donghoon; Bae, Hyun-Jin, E-mail: woo@astro.snu.ac.kr, E-mail: hjbae@galaxy.yonsei.ac.kr [Astronomy Program, Department of Physics and Astronomy, Seoul National University, Seoul 151-742 (Korea, Republic of)

    2017-04-20

    We present gas kinematics based on the [O iii] λ 5007 line and their connection to galaxy gravitational potential, active galactic nucleus (AGN) energetics, and star formation, using a large sample of ∼110,000 AGNs and star-forming (SF) galaxies at z < 0.3. Gas and stellar velocity dispersions are comparable to each other in SF galaxies, indicating that the ionized gas kinematics can be accounted by the gravitational potential of host galaxies. In contrast, AGNs clearly show non-gravitational kinematics, which is comparable to or stronger than the virial motion caused by the gravitational potential. The [O iii] velocity–velocity dispersion (VVD) diagram dramatically expands toward high values as a function of AGN luminosity, implying that the outflows are AGN-driven, while SF galaxies do not show such a trend. We find that the fraction of AGNs with a signature of outflow kinematics, steeply increases with AGN luminosity and Eddington ratio. In particular, the majority of luminous AGNs presents strong non-gravitational kinematics in the [O iii] profile. AGNs with strong outflow signatures show on average similar specific star formation rates (sSFRs) to those of star-forming galaxies. In contrast, AGNs with weak or no outflows have an order of magnitude lower sSFRs, suggesting that AGNs with current strong outflows do now show any negative AGN feedback and that it may take dynamical time to impact on star formation over galactic scales.

  6. Controlling Molecular Doping in Organic Semiconductors.

    Science.gov (United States)

    Jacobs, Ian E; Moulé, Adam J

    2017-11-01

    The field of organic electronics thrives on the hope of enabling low-cost, solution-processed electronic devices with mechanical, optoelectronic, and chemical properties not available from inorganic semiconductors. A key to the success of these aspirations is the ability to controllably dope organic semiconductors with high spatial resolution. Here, recent progress in molecular doping of organic semiconductors is summarized, with an emphasis on solution-processed p-type doped polymeric semiconductors. Highlighted topics include how solution-processing techniques can control the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn, affect the electronic properties of the material. Research in these areas has recently intensified, thanks to advances in chemical synthesis, improved understanding of charged states in organic materials, and a focus on relating fabrication techniques to morphology. Significant disorder in these systems, along with complex interactions between doping and film morphology, is often responsible for charge trapping and low doping efficiency. However, the strong coupling between doping, solubility, and morphology can be harnessed to control crystallinity, create doping gradients, and pattern polymers. These breakthroughs suggest a role for molecular doping not only in device function but also in fabrication-applications beyond those directly analogous to inorganic doping. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Charged Semiconductor Defects Structure, Thermodynamics and Diffusion

    CERN Document Server

    Seebauer, Edmund G

    2009-01-01

    The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, P...

  8. Fabrication and application of amorphous semiconductor devices

    International Nuclear Information System (INIS)

    Kumurdjian, Pierre.

    1976-01-01

    This invention concerns the design and manufacture of elecric switching or memorisation components with amorphous semiconductors. As is known some compounds, particularly the chalcogenides, have a resistivity of the semiconductor type in the amorphous solid state. These materials are obtained by the high temperature homogeneisation of several single elements such as tellurium, arsenic, germanium and sulphur, followed by water or air quenching. In particular these compounds have useful switching and memorisation properties. In particular they have the characteristic of not suffering deterioration when placed in an environment subjected to nuclear radiations. In order to know more about the nature and properties of these amorphous semiconductors the French patent No. 71 28048 of 30 June 1971 may be consulted with advantage [fr

  9. Reliability and radiation effects in compound semiconductors

    CERN Document Server

    Johnston, Allan

    2010-01-01

    This book discusses reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. Johnston's perspective in the book focuses on high-reliability applications in space, but his discussion of reliability is applicable to high reliability terrestrial applications as well. The book is important because there are new reliability mechanisms present in compound semiconductors that have produced a great deal of confusion. They are complex, and appear to be major stumbling blocks in the application of these types of devices. Many of the reliability problems that were prominent research topics five to ten years ago have been solved, and the reliability of many of these devices has been improved to the level where they can be used for ten years or more with low failure rates. There is also considerable confusion about the way that space radiation affects compound semiconductors. Some optoelectronic devices are so sensitive to damage in space that they are very difficu...

  10. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  11. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  12. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  13. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  14. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  15. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  16. Laboratory measurements of trace gas emissions from biomass burning of fuel types from the southeastern and southwestern United States

    Science.gov (United States)

    Burling, I. R.; Yokelson, R. J.; Griffith, D. W. T.; Johnson, T. J.; Veres, P.; Roberts, J. M.; Warneke, C.; Urbanski, S. P.; Reardon, J.; Weise, D. R.; Hao, W. M.; de Gouw, J.

    2010-11-01

    Vegetation commonly managed by prescribed burning was collected from five southeastern and southwestern US military bases and burned under controlled conditions at the US Forest Service Fire Sciences Laboratory in Missoula, Montana. The smoke emissions were measured with a large suite of state-of-the-art instrumentation including an open-path Fourier transform infrared (OP-FTIR) spectrometer for measurement of gas-phase species. The OP-FTIR detected and quantified 19 gas-phase species in these fires: CO2, CO, CH4, C2H2, C2H4, C3H6, HCHO, HCOOH, CH3OH, CH3COOH, furan, H2O, NO, NO2, HONO, NH3, HCN, HCl, and SO2. Emission factors for these species are presented for each vegetation type burned. Gas-phase nitrous acid (HONO), an important OH precursor, was detected in the smoke from all fires. The HONO emission factors ranged from 0.15 to 0.60 g kg-1 and were higher for the southeastern fuels. The fire-integrated molar emission ratios of HONO (relative to NOx) ranged from approximately 0.03 to 0.20, with higher values also observed for the southeastern fuels. The majority of non-methane organic compound (NMOC) emissions detected by OP-FTIR were oxygenated volatile organic compounds (OVOCs) with the total identified OVOC emissions constituting 61 ± 12% of the total measured NMOC on a molar basis. These OVOC may undergo photolysis or further oxidation contributing to ozone formation. Elevated amounts of gas-phase HCl and SO2 were also detected during flaming combustion, with the amounts varying greatly depending on location and vegetation type. The fuels with the highest HCl emission factors were all located in the coastal regions, although HCl was also observed from fuels farther inland. Emission factors for HCl were generally higher for the southwestern fuels, particularly those found in the chaparral biome in the coastal regions of California.

  17. Effect of organic-matter type and thermal maturity on methane adsorption in shale-gas systems

    Science.gov (United States)

    Zhang, Tongwei; Ellis, Geoffrey S.; Ruppel, Stephen C.; Milliken, Kitty; Yang, Rongsheng

    2012-01-01

    A series of methane (CH4) adsorption experiments on bulk organic rich shales and their isolated kerogens were conducted at 35 °C, 50 °C and 65 °C and CH4 pressure of up to 15 MPa under dry conditions. Samples from the Eocene Green River Formation, Devonian–Mississippian Woodford Shale and Upper Cretaceous Cameo coal were studied to examine how differences in organic matter type affect natural gas adsorption. Vitrinite reflectance values of these samples ranged from 0.56–0.58 %Ro. In addition, thermal maturity effects were determined on three Mississippian Barnett Shale samples with measured vitrinite reflectance values of 0.58, 0.81 and 2.01 %Ro. For all bulk and isolated kerogen samples, the total amount of methane adsorbed was directly proportional to the total organic carbon (TOC) content of the sample and the average maximum amount of gas sorption was 1.36 mmol of methane per gram of TOC. These results indicate that sorption on organic matter plays a critical role in shale-gas storage. Under the experimental conditions, differences in thermal maturity showed no significant effect on the total amount of gas sorbed. Experimental sorption isotherms could be fitted with good accuracy by the Langmuir function by adjusting the Langmuir pressure (PL) and maximum sorption capacity (Γmax). The lowest maturity sample (%Ro = 0.56) displayed a Langmuir pressure (PL) of 5.15 MPa, significantly larger than the 2.33 MPa observed for the highest maturity (%Ro > 2.01) sample at 50 °C. The value of the Langmuir pressure (PL) changes with kerogen type in the following sequence: type I > type II > type III. The thermodynamic parameters of CH4 adsorption on organic rich shales were determined based on the experimental CH4 isotherms. For the adsorption of CH4 on organic rich shales and their isolated kerogen, the heat of adsorption (q) and the standard entropy (Δs0) range from 7.3–28.0 kJ/mol and from −36.2 to −92.2 J/mol/K, respectively.

  18. Tunable radiation emitting semiconductor device

    NARCIS (Netherlands)

    2009-01-01

    A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

  19. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  20. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  1. Gas-Phase Hydrogen-Deuterium Exchange Labeling of Select Peptide Ion Conformer Types: a Per-Residue Kinetics Analysis.

    Science.gov (United States)

    Khakinejad, Mahdiar; Kondalaji, Samaneh Ghassabi; Tafreshian, Amirmahdi; Valentine, Stephen J

    2015-07-01

    The per-residue, gas-phase hydrogen deuterium exchange (HDX) kinetics for individual amino acid residues on selected ion conformer types of the model peptide KKDDDDDIIKIIK have been examined using ion mobility spectrometry (IMS) and HDX-tandem mass spectrometry (MS/MS) techniques. The [M + 4H](4+) ions exhibit two major conformer types with collision cross sections of 418 Å(2) and 446 Å(2); the [M + 3H](3+) ions also yield two different conformer types having collision cross sections of 340 Å(2) and 367 Å(2). Kinetics plots of HDX for individual amino acid residues reveal fast- and slow-exchanging hydrogens. The contributions of each amino acid residue to the overall conformer type rate constant have been estimated. For this peptide, N- and C-terminal K residues exhibit the greatest contributions for all ion conformer types. Interior D and I residues show decreased contributions. Several charge state trends are observed. On average, the D residues of the [M + 3H](3+) ions show faster HDX rate contributions compared with [M + 4H](4+) ions. In contrast the interior I8 and I9 residues show increased accessibility to exchange for the more elongated [M + 4H](4+) ion conformer type. The contribution of each residue to the overall uptake rate showed a good correlation with a residue hydrogen accessibility score model calculated using a distance from charge site and initial incorporation site for nominal structures obtained from molecular dynamic simulations (MDS).

  2. Chemoresistive gas sensor

    Science.gov (United States)

    Hirschfeld, T.B.

    1987-06-23

    A chemoresistive gas sensor is provided which has improved sensitivity. A layer of organic semiconductor is disposed between two electrodes which, in turn, are connected to a voltage source. High conductivity material is dispersed within the layer of organic semiconductor in the form of very small particles, or islands. The average interisland spacing is selected so that the predominant mode of current flow is by way of electron funneling. Adsorption of gaseous contaminant onto the layer of organic semiconductor modulates the tunneling current in a quantitative manner. 2 figs.

  3. Design of Highly Selective Gas Sensors via Physicochemical Modification of Oxide Nanowires: Overview

    Directory of Open Access Journals (Sweden)

    Hyung-Sik Woo

    2016-09-01

    Full Text Available Strategies for the enhancement of gas sensing properties, and specifically the improvement of gas selectivity of metal oxide semiconductor nanowire (NW networks grown by chemical vapor deposition and thermal evaporation, are reviewed. Highly crystalline NWs grown by vapor-phase routes have various advantages, and thus have been applied in the field of gas sensors over the years. In particular, n-type NWs such as SnO2, ZnO, and In2O3 are widely studied because of their simple synthetic preparation and high gas response. However, due to their usually high responses to C2H5OH and NO2, the selective detection of other harmful and toxic gases using oxide NWs remains a challenging issue. Various strategies—such as doping/loading of noble metals, decorating/doping of catalytic metal oxides, and the formation of core–shell structures—have been explored to enhance gas selectivity and sensitivity, and are discussed herein. Additional methods such as the transformation of n-type into p-type NWs and the formation of catalyst-doped hierarchical structures by branch growth have also proven to be promising for the enhancement of gas selectivity. Accordingly, the physicochemical modification of oxide NWs via various methods provides new strategies to achieve the selective detection of a specific gas, and after further investigations, this approach could pave a new way in the field of NW-based semiconductor-type gas sensors.

  4. Depletion field focusing in semiconductors

    NARCIS (Netherlands)

    Prins, M.W.J.; Gelder, Van A.P.

    1996-01-01

    We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

  5. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  6. Semi-conductor rectifiers

    International Nuclear Information System (INIS)

    1981-01-01

    A method is described for treating a semiconductor rectifier, comprising: heating the rectifier to a temperature in the range of 100 0 C to 500 0 C, irradiating the rectifier while maintaining its temperature within the said range, and then annealing the rectifier at a temperature of between 280 0 C and 350 0 C for between two and ten hours. (author)

  7. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  8. A Study on Fatigue Design Automation of Plug- and Ring-type Gas-welded Joints of STS301L Taking Welded Residual Stress into Account

    International Nuclear Information System (INIS)

    Baek, Seung yeb; Yun, Ki Ho

    2010-01-01

    This paper presents a fatigue design method for plug- and ring-type gas-welded joints, which takes into account the effects of welding residual stress. To develop this method, we simulated the gas-welding process by performing nonlinear finite element analysis (FEA) To validate the FEA results, numerically calculated residual stresses in the gas welds were then compared with experimental results obtained by the hole-drilling method. To evaluate the fatigue strength of plug- and ring-type gas-welded joints influenced by welding residual stresses, the use of stress amplitude (σ a )R, which includes the welding residual stress in gas welds, is proposed (σ a )R on the basis of a modified Goodman equation that includes the residual stress effects. Using the stress amplitude (σ a )R at the hot spot point of gas weld, the relations obtained as the fatigue test results for plug and ring type gas welded joints having various dimensions and shapes were systematically rearranged to obtain the (σ a )R-N f relationship. It was found that more systematic and accurate evaluation of the fatigue strength of plug- and ring-type gas-welded joints can be achieved by using (σ a )R

  9. Conversion of electric bell type furnace for natural gas usage: a case study

    Energy Technology Data Exchange (ETDEWEB)

    Ferraz, Andre D.; Machado Junior, Antonio R.; Rocha, Ivan C.C. da; Azevedo, Jorge G.W. de; Konishi, Ricardo; Lehmkuhl, Willian A. [Companhia de Gas de Santa Catarina (SCGAS), Florianopolis, SC (Brazil); Nunes, Andrea T.; Possamai, Talita S.; Nicolau, Vicente de P. [Universidade Federal de Santa Catarina (UFSC), Florianopolis, SC (Brazil)

    2012-07-01

    In the present process of the heat treatment of normalizing of the crystalline structure of cast metal pieces, the heating is made by electric resistance arranged on the inner surfaces of the side walls of a bell furnace. Although electrical heating is suitable to obtain a uniform generation on the walls covered with electrical resistances, and is easy to control and operate with virtually no gas flow, it has some disadvantages such as poor movement of the heated ambient air, and higher cost. Heating occurs mostly by thermal radiation, with direct exchange between the resistors and the heated parts, but with a part serving as a barrier to the other, and with greater difficulty of heating the core loading. The details presented in this study, will simulate the process of heating by using electricity and using natural gas. In these simulations will be observed the distribution of temperature in the load and indoor over time and the rate of energy transferred to the load and also for the outside so to have a comparative processes. (author)

  10. A pill-box design, flow type, gas scintillation proportional counter

    International Nuclear Information System (INIS)

    Garg, S.P.; Sharma, R.C.; Bhati, S.; Somasundaram, S.

    1982-01-01

    A gas scintillation proportional counter of 'pill-box' design operated with argon + 2.5% nitrogen gas in continuous flow, has been developed. An energy resolution of 1.6% is obtained for 239 Pu α-particles emitted from a mixed nuclide source of 239 Pu- 241 Am- 244 Cm and injected into the counter parallel to the anode. The risetime of the scintillation pulse is found to be less than 0.5 μs. Measurements have been made of charge and light gain factors as a function of anode voltage. It is found that for a given anode voltage, the scintillation pulse amplitude increases sharply with the addition of nitrogen to argon and reaches a maximum at about 2.5% and then decreases slowly, whereas the charge pulse amplitude reduces monotonically. Nitrogen improvement factors with the addition of 2.5% nitrogen to argon are found to be different for two photomultipliers with different photocathode responses. The improvement in energy resolution as a result of addition of nitrogen to argon is discussed. Comments are made on the intrinsic energy resolution capabilities of such a counter. (orig.)

  11. Comparison of junctionless and inversion-mode p-type metal-oxide-semiconductor field-effect transistors in presence of hole-phonon interactions

    Energy Technology Data Exchange (ETDEWEB)

    Dib, E., E-mail: elias.dib@for.unipi.it [Dipartimento di Ingegneria dell' Informazione, Università di Pisa, 56122 Pisa (Italy); Carrillo-Nuñez, H. [Integrated Systems Laboratory ETH Zürich, Gloriastrasse 35, 8092 Zürich (Switzerland); Cavassilas, N.; Bescond, M. [IM2NP, UMR CNRS 6242, Bât. IRPHE, Technopôle de Château-Gombert, 13384 Marseille Cedex 13 (France)

    2016-01-28

    Junctionless transistors are being considered as one of the alternatives to conventional metal-oxide field-effect transistors. In this work, it is then presented a simulation study of silicon double-gated p-type junctionless transistors compared with its inversion-mode counterpart. The quantum transport problem is solved within the non-equilibrium Green's function formalism, whereas hole-phonon interactions are tackled by means of the self-consistent Born approximation. Our findings show that junctionless transistors should perform as good as a conventional transistor only for ultra-thin channels, with the disadvantage of requiring higher supply voltages in thicker channel configurations.

  12. Comparison of junctionless and inversion-mode p-type metal-oxide-semiconductor field-effect transistors in presence of hole-phonon interactions

    International Nuclear Information System (INIS)

    Dib, E.; Carrillo-Nuñez, H.; Cavassilas, N.; Bescond, M.

    2016-01-01

    Junctionless transistors are being considered as one of the alternatives to conventional metal-oxide field-effect transistors. In this work, it is then presented a simulation study of silicon double-gated p-type junctionless transistors compared with its inversion-mode counterpart. The quantum transport problem is solved within the non-equilibrium Green's function formalism, whereas hole-phonon interactions are tackled by means of the self-consistent Born approximation. Our findings show that junctionless transistors should perform as good as a conventional transistor only for ultra-thin channels, with the disadvantage of requiring higher supply voltages in thicker channel configurations

  13. Active Galactic Nuclei Feedback and the Origin and Fate of the Hot Gas in Early-type Galaxies

    Science.gov (United States)

    Pellegrini, Silvia; Ciotti, Luca; Negri, Andrea; Ostriker, Jeremiah P.

    2018-04-01

    A recent determination of the relationships between the X-ray luminosity of the ISM (L X) and the stellar and total mass for a sample of nearby early-type galaxies (ETGs) is used to investigate the origin of the hot gas, via a comparison with the results of hydrodynamical simulations of the ISM evolution for a large set of isolated ETGs. After the epoch of major galaxy formation (after z ≃ 2), the ISM is replenished by stellar mass losses and SN ejecta, at the rate predicted by stellar evolution, and is depleted by star formation; it is heated by the thermalization of stellar motions, SNe explosions, and the mechanical (from winds) and radiative AGN feedback. The models agree well with the observed relations, even for the largely different L X values at the same mass, thanks to the sensitivity of the gas flow to many galaxy properties; this holds for models including AGN feedback, and those without. Therefore, the mass input from the stellar population is able to account for a major part of the observed L X; and AGN feedback, while very important to maintain massive ETGs in a time-averaged quasi-steady state, keeping low star formation and the black hole mass, does not dramatically alter the gas content originating in stellar recycled material. These conclusions are based on theoretical predictions for the stellar population contributions in mass and energy, and on a self-consistent modeling of AGN feedback.

  14. Semiconductor X-ray detectors

    CERN Document Server

    Lowe, Barrie Glyn

    2014-01-01

    Identifying and measuring the elemental x-rays released when materials are examined with particles (electrons, protons, alpha particles, etc.) or photons (x-rays and gamma rays) is still considered to be the primary analytical technique for routine and non-destructive materials analysis. The Lithium Drifted Silicon (Si(Li)) X-Ray Detector, with its good resolution and peak to background, pioneered this type of analysis on electron microscopes, x-ray fluorescence instruments, and radioactive source- and accelerator-based excitation systems. Although rapid progress in Silicon Drift Detectors (SDDs), Charge Coupled Devices (CCDs), and Compound Semiconductor Detectors, including renewed interest in alternative materials such as CdZnTe and diamond, has made the Si(Li) X-Ray Detector nearly obsolete, the device serves as a useful benchmark and still is used in special instances where its large, sensitive depth is essential. Semiconductor X-Ray Detectors focuses on the history and development of Si(Li) X-Ray Detect...

  15. Semirelativity in semiconductors: a review.

    Science.gov (United States)

    Zawadzki, Wlodek

    2017-09-20

    An analogy between behavior of electrons in narrow-gap semiconductors (NGS) and relativistic electrons in vacuum is reviewed. Energy band structures [Formula: see text] are considered for various NGS materials and their correspondence to the energy-momentum relation in special relativity is emphasized. It is indicated that special relativity for vacuum is analogous to a two-band [Formula: see text] description for NGS. The maximum electron velocity in NGS is [Formula: see text], which corresponds to the light velocity in vacuum. An effective mass of charge carriers in semiconductors is introduced, relating their velocity to quasimomentum and it is shown that this mass depends on electron energy (or velocity) in a way similar to the mass of free relativistic electrons. In [Formula: see text] alloys one can reach vanishing energy gap at which electrons and light holes become three-dimensional massless Dirac fermions. A wavelength [Formula: see text] is defined for NGS, in analogy to the Compton wavelength in relativistic quantum mechanics. It is estimated that [Formula: see text] is on the order of tens of Angstroms in typical semiconducting materials which is experimentally confirmed in tunneling experiments on energy dispersion in the forbidden gap. Statistical properties of the electron gas in NGS are calculated and their similarity is demonstrated to those of the Juttner gas of relativistic particles. Interband electron tunneling in NGS is described and shown to be in close analogy to the predicted but unobserved tunneling between negative and positive energies resulting from the Dirac equation for free electrons. It is demonstrated that the relativistic analogy holds for orbital and spin properties of electrons in the presence of an external magnetic field. In particular, it is shown that the spin magnetic moment of both NGS electrons and relativistic electrons approaches zero with increasing energy. This conclusion is confirmed experimentally for NGS. Electrons

  16. Semirelativity in semiconductors: a review

    Science.gov (United States)

    Zawadzki, Wlodek

    2017-09-01

    An analogy between behavior of electrons in narrow-gap semiconductors (NGS) and relativistic electrons in vacuum is reviewed. Energy band structures \\varepsilon ≤ft(\\mathbf{k}\\right) are considered for various NGS materials and their correspondence to the energy-momentum relation in special relativity is emphasized. It is indicated that special relativity for vacuum is analogous to a two-band \\mathbf{k}\\centerdot \\mathbf{p} description for NGS. The maximum electron velocity in NGS is u≃ 1× {{10}8}~\\text{cm}~{{\\text{s}}-1} , which corresponds to the light velocity in vacuum. An effective mass of charge carriers in semiconductors is introduced, relating their velocity to quasimomentum and it is shown that this mass depends on electron energy (or velocity) in a way similar to the mass of free relativistic electrons. In \\text{H}{{\\text{g}}1-x}\\text{C}{{\\text{d}}x}\\text{Te} alloys one can reach vanishing energy gap at which electrons and light holes become three-dimensional massless Dirac fermions. A wavelength {λz} is defined for NGS, in analogy to the Compton wavelength in relativistic quantum mechanics. It is estimated that {λz} is on the order of tens of Angstroms in typical semiconducting materials which is experimentally confirmed in tunneling experiments on energy dispersion in the forbidden gap. Statistical properties of the electron gas in NGS are calculated and their similarity is demonstrated to those of the Juttner gas of relativistic particles. Interband electron tunneling in NGS is described and shown to be in close analogy to the predicted but unobserved tunneling between negative and positive energies resulting from the Dirac equation for free electrons. It is demonstrated that the relativistic analogy holds for orbital and spin properties of electrons in the presence of an external magnetic field. In particular, it is shown that the spin magnetic moment of both NGS electrons and relativistic electrons approaches zero with increasing

  17. Tris(2-(1 H -pyrazol-1-yl)pyridine)cobalt(III) as p-Type Dopant for Organic Semiconductors and Its Application in Highly Efficient Solid-State Dye-Sensitized Solar Cells

    KAUST Repository

    Burschka, Julian

    2011-11-16

    Chemical doping is an important strategy to alter the charge-transport properties of both molecular and polymeric organic semiconductors that find widespread application in organic electronic devices. We report on the use of a new class of Co(III) complexes as p-type dopants for triarylamine-based hole conductors such as spiro-MeOTAD and their application in solid-state dye-sensitized solar cells (ssDSCs). We show that the proposed compounds fulfill the requirements for this application and that the discussed strategy is promising for tuning the conductivity of spiro-MeOTAD in ssDSCs, without having to rely on the commonly employed photo-doping. By using a recently developed high molar extinction coefficient organic D-π-A sensitizer and p-doped spiro-MeOTAD as hole conductor, we achieved a record power conversion efficiency of 7.2%, measured under standard solar conditions (AM1.5G, 100 mW cm -2). We expect these promising new dopants to find widespread applications in organic electronics in general and photovoltaics in particular. © 2011 American Chemical Society.

  18. Radiation tolerance of Si{sub 1−y}C{sub y} source/drain n-type metal oxide semiconductor field effect transistors with different carbon concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Nakashima, Toshiyuki, E-mail: nakashima_t@cdk.co.jp [Interdisciplinary Graduate School of Agriculture and Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-nishi, Miyazaki (Japan); Chuo Denshi Kogyo Co., Ltd., 3400 Kohoyama, Matsubase, Uki, Kumamoto (Japan); Asai, Yuki; Hori, Masato; Yoneoka, Masashi; Tsunoda, Isao; Takakura, Kenichiro [Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan); Gonzalez, Mireia Bargallo [Institut de Microelectronica de Barcelona (Centre Nacional de Microelectronica — Consejo Superior de Investigaciones Cientificas) Campus UAB, 08193 Bellaterra (Spain); Simoen, Eddy [imec, Kapeldreef 75, B-3001 Leuven (Belgium); Claeys, Cor [imec, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven (Belgium); Yoshino, Kenji [Interdisciplinary Graduate School of Agriculture and Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-nishi, Miyazaki (Japan)

    2014-04-30

    The 2-MeV electron radiation damage of silicon–carbon source/drain (S/D) n-type metal oxide semiconductor field effect transistors with different carbon (C) concentrations is studied. Before irradiation, an enhancement of the electron mobility with C concentration of the S/D stressors is clearly observed. On the other hand, after electron irradiation, both the threshold voltage shift and the maximum electron mobility degradation are independent on the C concentration for all electron fluences studied. These results indicate that the strain induced electron mobility enhancement due to the C doping is retained after irradiation in the studied devices. - Highlights: • We have investigated the electron irradiation effect of the Si{sub 1−y}C{sub y} S/D n-MOSFETs. • The threshold voltage variations by irradiation are independent on the C doping. • The electron-mobility decreased for all C concentrations by electron irradiation. • The strain induced mobility enhancement effect is retained after irradiation.

  19. 3D pore-type digital rock modeling of natural gas hydrate for permafrost and numerical simulation of electrical properties

    Science.gov (United States)

    Dong, Huaimin; Sun, Jianmeng; Lin, Zhenzhou; Fang, Hui; Li, Yafen; Cui, Likai; Yan, Weichao

    2018-02-01

    Natural gas hydrate is being considered as an alternative energy source for sustainable development and has become a focus of research throughout the world. In this paper, based on CT scanning images of hydrate reservoir rocks, combined with the microscopic distribution of hydrate, a diffusion limited aggregation (DLA) model was used to construct 3D hydrate digital rocks of different distribution types, and the finite-element method was used to simulate their electrical characteristics in order to study the influence of different hydrate distribution types, hydrate saturation and formation of water salinity on electrical properties. The results show that the hydrate digital rocks constructed using the DLA model can be used to characterize the microscopic distribution of different types of hydrates. Under the same conditions, the resistivity of the adhesive hydrate digital rock is higher than the cemented and scattered type digital rocks, and the resistivity of the scattered hydrate digital rock is the smallest among the three types. Besides, the difference in the resistivity of the different types of hydrate digital rocks increases with an increase in hydrate saturation, especially when the saturation is larger than 55%, and the rate of increase of each of the hydrate types is quite different. Similarly, the resistivity of the three hydrate types decreases with an increase in the formation of water salinity. The single distribution hydrate digital rock constructed, combined with the law of microscopic distribution and influence of saturation on the electrical properties, can effectively improve the accuracy of logging identification of hydrate reservoirs and is of great significance for the estimation of hydrate reserves.

  20. The differentiation of fibre- and drug type Cannabis seedlings by gas chromatography/mass spectrometry and chemometric tools.

    Science.gov (United States)

    Broséus, Julian; Anglada, Frédéric; Esseiva, Pierre

    2010-07-15

    Cannabis cultivation in order to produce drugs is forbidden in Switzerland. Thus, law enforcement authorities regularly ask forensic laboratories to determinate cannabis plant's chemotype from seized material in order to ascertain that the plantation is legal or not. As required by the EU official analysis protocol the THC rate of cannabis is measured from the flowers at maturity. When laboratories are confronted to seedlings, they have to lead the plant to maturity, meaning a time consuming and costly procedure. This study investigated the discrimination of fibre type from drug type Cannabis seedlings by analysing the compounds found in their leaves and using chemometrics tools. 11 legal varieties allowed by the Swiss Federal Office for Agriculture and 13 illegal ones were greenhouse grown and analysed using a gas chromatograph interfaced with a mass spectrometer. Compounds that show high discrimination capabilities in the seedlings have been identified and a support vector machines (SVMs) analysis was used to classify the cannabis samples. The overall set of samples shows a classification rate above 99% with false positive rates less than 2%. This model allows then discrimination between fibre and drug type Cannabis at an early stage of growth. Therefore it is not necessary to wait plants' maturity to quantify their amount of THC in order to determine their chemotype. This procedure could be used for the control of legal (fibre type) and illegal (drug type) Cannabis production. (c) 2010 Elsevier Ireland Ltd. All rights reserved.

  1. Ge1−xSix on Ge-based n-type metal–oxide semiconductor field-effect transistors by device simulation combined with high-order stress–piezoresistive relationships

    International Nuclear Information System (INIS)

    Lee, Chang-Chun; Hsieh, Chia-Ping; Huang, Pei-Chen; Cheng, Sen-Wen; Liao, Ming-Han

    2016-01-01

    The considerably high carrier mobility of Ge makes Ge-based channels a promising candidate for enhancing the performance of next-generation devices. The n-type metal–oxide semiconductor field-effect transistor (nMOSFET) is fabricated by introducing the epitaxial growth of high-quality Ge-rich Ge 1−x Si x alloys in source/drain (S/D) regions. However, the short channel effect is rarely considered in the performance analysis of Ge-based devices. In this study, the gate-width dependence of a 20 nm Ge-based nMOSFET on electron mobility is investigated. This investigation uses simulated fabrication procedures combined with the relationship of the interaction between stress components and piezoresistive coefficients at high-order terms. Ge 1−x Si x alloys, namely, Ge 0.96 Si 0.04 , Ge 0.93 Si 0.07 , and Ge 0.86 Si 0.14 , are individually tested and embedded into the S/D region of the proposed device layout and are used in the model of stress estimation. Moreover, a 1.0 GPa tensile contact etching stop layer (CESL) is induced to explore the effect of bi-axial stress on device geometry and subsequent mobility variation. Gate widths ranging from 30 nm to 4 μm are examined. Results show a significant change in stress when the width is < 300 nm. This phenomenon becomes notable when the Si in the Ge 1−x Si x alloy is increased. The stress contours of the Ge channel confirm the high stress components induced by the Ge 0.86 Si 0.14 stressor within the device channel. Furthermore, the stresses (S yy ) of the channel in the transverse direction become tensile when CESL is introduced. Furthermore, when pure S/D Ge 1−x Si x alloys are used, a maximum mobility gain of 28.6% occurs with an ~ 70 nm gate width. A 58.4% increase in mobility gain is obtained when a 1.0 GPa CESL is loaded. However, results indicate that gate width is extended to 200 nm at this point. - Highlights: • A 20 nm Ge-based n-channel metal–oxide semiconductor field-effect transistor is investigated

  2. Development of a neutronic model for the fuel of a high temperature gas reactor type PBMR

    International Nuclear Information System (INIS)

    Oropeza C, I.; Carmona H, R.; Francois L, J. L.

    2008-01-01

    In this work was developed the neutronic model of a fuel sphere of a nuclear reactor of gas of high temperature to modulate of bed of spheres (PBMR), using the Monte Carlo method with the MCNPx code. In order to be able to verify the fuel model constructed in this investigation, it is used a case of reference, based on an international exercise b enchmark . The benchmark report contains the results sent by different international participants for five phases with respect to the high temperature gas reactor (HTR), fed with uranium, plutonium and thorium. In particular, in first stage of benchmark an infinite adjustment of uranium compound fuel spheres is considered unique, with which our results were compared. This first stage considers two cases: cell calculations with spherical external frontier and cell calculations with cubic external frontier. The objective is to identify any increase in the uncertainty, related to the uranium fuel, that is associated with the plutonium and thorium fuels. In order to validate our results, the values of the neutron multiplication factor were taken in account, in cold and in the heat of the moment from the participants who sent their results obtained with Monte Carlo and deterministic calculations. The model of the fuel sphere developed in this work considers a regular distribution of 15000 Triso particles, in a cubic mesh centered within the sphere. For it was necessary to define the step firstly or p itch o f the cubic mesh. Generally, the results obtained by the participants of benchmark and those of this investigation present good agreement, nevertheless, appear some discrepancies, attributed to factors like different libraries of cross sections used, the nature of the solution: Monte Carlo or deterministic, and the difficulty of some participants to model the external frontier condition of reflection. (Author)

  3. Design and Experimentation with Sandwich Microstructure for Catalytic Combustion-Type Gas Sensors

    Directory of Open Access Journals (Sweden)

    Jun-Tao Gu

    2014-03-01

    Full Text Available The traditional handmade catalytic combustion gas sensor has some problems such as a pairing difficulty, poor consistency, high power consumption, and not being interchangeable. To address these issues, integrated double catalytic combustion of alcohol gas sensor was designed and manufactured using silicon micro-electro-mechanical systems (MEMS technology. The temperature field of the sensor is analyzed using the ANSYS finite element analysis method. In this work, the silicon oxide-PECVD-oxidation technique is used to manufacture a SiO2-Si3N2-SiO2 microstructure carrier with a sandwich structure, while wet etching silicon is used to form a beam structure to reduce the heat consumption. Thin-film technology is adopted to manufacture the platinum-film sensitive resistance. Nano Al2O3-ZrO-ThO is coated to format the sensor carrier, and the sensitive unit is dipped in a Pt-Pd catalyst solution to form the catalytic sensitive bridge arm. Meanwhile the uncoated catalyst carrier is considered as the reference unit, realizing an integrated chip based on a micro double bridge and forming sensors. The lines of the Pt thin-film resistance have been observed with an electronic microscope. The compensation of the sensitive material carriers and compensation materials have been analyzed using an energy spectrum. The results show that the alcohol sensor can detect a volume fraction between 0 and 4,500 × 10−6 and has good linear output characteristic. The temperature ranges from −20 to +40 °C. The humidity ranges from 30% to 85% RH. The zero output of the sensor is less than ±2.0% FS. The power consumption is ≤0.2 W, and both the response and recovery time are approximately 20 s.

  4. A Search for Circumstellar Gas-Disk Variability in F-type Stars

    Science.gov (United States)

    Adkins, Ally; Montgomery, Sharon Lynn; Welsh, Barry

    2018-01-01

    Over the past six years, short-term (night-to-night) variability in the CaII K-line (3933Å) absorption has been detected towards 22 rapidly-rotating A-type stars, all but four of them discovered by us. Most of these stars are young (age McDonald Observatory) during June 2017. The appearance or absence of similar short-lived, Doppler-shifted absorption in F-type stars serves as a test of our understanding of the underlying phenomena.

  5. Tris(2-(1 H -pyrazol-1-yl)pyridine)cobalt(III) as p-Type Dopant for Organic Semiconductors and Its Application in Highly Efficient Solid-State Dye-Sensitized Solar Cells

    KAUST Repository

    Burschka, Julian; Dualeh, Amalie; Kessler, Florian; Baranoff, Etienne; Cevey-Ha, Ngoc-Lê ; Yi, Chenyi; Nazeeruddin, Mohammad K.; Grä tzel, Michael

    2011-01-01

    Chemical doping is an important strategy to alter the charge-transport properties of both molecular and polymeric organic semiconductors that find widespread application in organic electronic devices. We report on the use of a new class of Co

  6. Three-dimensional particle image velocimetry in a generic can-type gas turbine combustor

    CSIR Research Space (South Africa)

    Meyers, BC

    2009-09-01

    Full Text Available The three-dimensional flow field inside a generic can-type, forward flow, experimental combustor was measured. A stereoscopic Particle Image Velocimetry (PIV) system was used to obtain the flow field of the combustor in the non-reacting condition...

  7. Integration and electrical properties of epitaxial LiNbO{sub 3} ferroelectric film on n-type GaN semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Hao Lanzhong, E-mail: hao_lanzhong@live.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Faculty of Science, China University of Petroleum, Tsingtao, Shandong 266555 (China); Zhu Jun, E-mail: junzhu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Liu Yunjie [Faculty of Science, China University of Petroleum, Tsingtao, Shandong 266555 (China); Wang Shuili; Zeng Huizhong; Liao Xiuwei; Liu Yingying; Lei Huawei; Zhang Ying; Zhang Wanli; Li Yanrong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2012-01-31

    LiNbO{sub 3} (LNO) films were epitaxially grown on n-type GaN templates using pulsed laser deposition technique. The microstructures and electrical properties of the LNO/GaN heterostructure were characterized by x-ray diffraction, transmission electron microscope, and capacitance-voltage (C-V) measurements. The LNO films had two variants of grains rotated 60 Degree-Sign in-plane to each other. The epitaxial relationship of the respective variants could be built as [10-10]LNO//[1-210]GaN and [1-100]LNO//[11-20]GaN via 30 Degree-Sign in-plane rotation of the LNO film relative to the GaN layer. Interface analysis of the heterostructure demonstrated that two different epitaxial growth mechanisms vertical heteroepitaxy and lateral homoepitaxy, should happen at the interface of LNO/GaN. Counterclockwise C-V windows induced by the ferroelectric polarizations of LNO film could be observed clearly. The size of the window increased with increasing the sweep bias and a large window of 5.8 V was achieved at {+-} 15 V. By solving Poisson and drift-diffusion equations, the physical mechanisms of the C-V characteristics were demonstrated.

  8. Accelerating Gas Adsorption on 3D Percolating Carbon Nanotubes.

    Science.gov (United States)

    Li, Hui; Wen, Chenyu; Zhang, Youwei; Wu, Dongping; Zhang, Shi-Li; Qiu, Zhi-Jun

    2016-02-18

    In the field of electronic gas sensing, low-dimensional semiconductors such as single-walled carbon nanotubes (SWCNTs) can offer high detection sensitivity owing to their unprecedentedly large surface-to-volume ratio. The sensitivity and responsivity can further improve by increasing their areal density. Here, an accelerated gas adsorption is demonstrated by exploiting volumetric effects via dispersion of SWCNTs into a percolating three-dimensional (3D) network in a semiconducting polymer. The resultant semiconducting composite film is evaluated as a sensing membrane in field effect transistor (FET) sensors. In order to attain reproducible characteristics of the FET sensors, a pulsed-gate-bias measurement technique is adopted to eliminate current hysteresis and drift of sensing baseline. The rate of gas adsorption follows the Langmuir-type isotherm as a function of gas concentration and scales with film thickness. This rate is up to 5 times higher in the composite than only with an SWCNT network in the transistor channel, which in turn results in a 7-fold shorter time constant of adsorption with the composite. The description of gas adsorption developed in the present work is generic for all semiconductors and the demonstrated composite with 3D percolating SWCNTs dispersed in functional polymer represents a promising new type of material for advanced gas sensors.

  9. Some economic aspects of natural uranium graphite gas reactor types. Present status and trends of costs in France

    International Nuclear Information System (INIS)

    Gaussens, J.; Tanguy, P.

    1964-01-01

    The first part of this report defines the economic advantages of natural uranium fuels, which are as follows: the restricted number and relatively simple fabrication processes of the fuel elements, the low cost per kWh of the finished product and the reasonable capital investments involved in this type of fuel cycle as compared to that of enriched uranium. All these factors combine to reduce the arbitrary nature of cost estimates, which is particularly marked in the case of enriched uranium due to the complexity of its cycle and the uncertainties of plutonium prices). Finally, the wide availability of yellowcake, as opposed to the present day virtual monopoly of isotope separation, and the low cost of natural uranium stockpiling, offer appreciable guarantees in the way of security of supply and economic and political independence as compared with the use of enriched uranium. As far as overall capital investments are concerned, it is shown that, although graphite-gas reactor costs are higher than those of light water reactors in certain capacity ranges, the situation becomes far less clear when we start taking into account, in the interest of national independence, the cost of nuclear fuel production equipment in the case of each of these types of reactor. Finally, the marginal cost of the power capacity of a graphite-gas reactor is low and its technological limitations have receded (owing particularly to the use of prestressed concrete). It is a well known fact that the trend is now towards larger power station units, which means that the rentability of natural uranium graphite reactors as compared to other types of reactors will become more and more pronounced. The second section aims at presenting a realistic short and medium term view of the fuel, running, and investment costs of French natural uranium graphite gas, reactors. Finally, the economic goals which this type of reactor can reach in the very near future are given. It is thus shown that considerable

  10. Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

    Science.gov (United States)

    Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

    2017-01-18

    Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

  11. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  12. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  13. Three dimensional strained semiconductors

    Science.gov (United States)

    Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

    2016-11-08

    In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

  14. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  15. Optically coupled semiconductor device

    Energy Technology Data Exchange (ETDEWEB)

    Kumagaya, Naoki

    1988-11-18

    This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

  16. Laboratory measurements of trace gas emissions from biomass burning of fuel types from the southeastern and southwestern United States

    Directory of Open Access Journals (Sweden)

    I. R. Burling

    2010-11-01

    Full Text Available Vegetation commonly managed by prescribed burning was collected from five southeastern and southwestern US military bases and burned under controlled conditions at the US Forest Service Fire Sciences Laboratory in Missoula, Montana. The smoke emissions were measured with a large suite of state-of-the-art instrumentation including an open-path Fourier transform infrared (OP-FTIR spectrometer for measurement of gas-phase species. The OP-FTIR detected and quantified 19 gas-phase species in these fires: CO2, CO, CH4, C2H2, C2H4, C3H6, HCHO, HCOOH, CH3OH, CH3COOH, furan, H2O, NO, NO2, HONO, NH3, HCN, HCl, and SO2. Emission factors for these species are presented for each vegetation type burned. Gas-phase nitrous acid (HONO, an important OH precursor, was detected in the smoke from all fires. The HONO emission factors ranged from 0.15 to 0.60 g kg−1 and were higher for the southeastern fuels. The fire-integrated molar emission ratios of HONO (relative to NOx ranged from approximately 0.03 to 0.20, with higher values also observed for the southeastern fuels. The majority of non-methane organic compound (NMOC emissions detected by OP-FTIR were oxygenated volatile organic compounds (OVOCs with the total identified OVOC emissions constituting 61 ± 12% of the total measured NMOC on a molar basis. These OVOC may undergo photolysis or further oxidation contributing to ozone formation. Elevated amounts of gas-phase HCl and SO2 were also detected during flaming combustion, with the amounts varying greatly depending on location and vegetation type. The fuels with the highest HCl emission factors were all located in the coastal regions, although HCl was also observed from fuels farther inland. Emission factors for HCl were generally higher for the southwestern fuels

  17. Hexavalent chromium content in stainless steel welding fumes is dependent on the welding process and shield gas type.

    Science.gov (United States)

    Keane, Michael; Stone, Samuel; Chen, Bean; Slaven, James; Schwegler-Berry, Diane; Antonini, James

    2009-02-01

    Occupational exposure to welding fumes is a known health hazard. To isolate elements in stainless steel welding fumes with high potential for adverse health outcomes, fumes were generated using a robotic gas metal arc system, using four shield gases of varying oxygen content. The objective was to measure Cr(VI) concentrations in a broad spectrum of gas metal arc welding processes, and identify processes of exceptionally high or low Cr(VI) content. The gases used were 95% Ar/5% O(2), 98% Ar/2% O(2), 95% Ar/5%CO(2), and 75% He/25% Ar. The welder was operated in axial spray mode (Ar/O(2), Ar/CO(2)), short-circuit (SC) mode (Ar/CO(2) low voltage and He/Ar), and pulsed axial-spray mode (98% Ar/2% O(2)). Results indicate large differences in Cr(VI) in the fumes, with Ar/O(2) (Pulsed)>Ar/O(2)>Ar/CO(2)>Ar/CO(2) (SC)>He/Ar; values were 3000+/-300, 2800+/-85, 2600+/-120, 1400+/-190, and 320+/-290 ppm respectively (means +/- standard errors for 2 runs and 3 replicates per run). Respective rates of Cr(VI) generation were 1.5, 3.2, 4.4, 1.3, and 0.46 microg/min; generation rates were also calculated in terms of microg Cr(VI) per metre of wire used. The generation rates of Cr(VI) increased with increasing O(3) concentrations. Particle size measurements indicated similar distributions, but somewhat higher >0.6 microm fractions for the short-circuit mode samples. Fumes were also sampled into 2 selected size ranges, a microspatter fraction (>or=0.6 microm) and a fine (welding type and shield gas type, and this presents an opportunity to tailor welding practices to lessen Cr(VI) exposures in workplaces by selecting low Cr(VI)-generating processes. Short-circuit processes generated less Cr(VI) than axial-spray methods, and inert gas shielding gave lower Cr(VI) content than shielding with active gases. A short circuit He/Ar shielded process and a pulsed axial spray Ar/O(2) process were both identified as having substantially lower Cr(VI) generation rates per unit of wire used relative

  18. High throughput semiconductor deposition system

    Science.gov (United States)

    Young, David L.; Ptak, Aaron Joseph; Kuech, Thomas F.; Schulte, Kevin; Simon, John D.

    2017-11-21

    A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 .mu.m/minute.

  19. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  20. Muonium states in semiconductors

    International Nuclear Information System (INIS)

    Patterson, B.D.

    1987-01-01

    There is a brief summary of what is known about the muonium states isotropic, anisotropic and diamagnetic in diamond and zincblende semiconductors. The report deals with muonium spectroscopy, including the formation probabilities, hyperfine parameters and electronic g-factors of the states. The dynamics of the states is treated including a discussion of the transition from isotropic Mu to anisotropic Mu in diamond, temperature-dependent linewidthes in silicon and germanium and effects of daping and radiation damage

  1. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  2. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  3. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  4. Semiconductor Ion Implanters

    International Nuclear Information System (INIS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-01-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  5. The Physics of Semiconductors

    Science.gov (United States)

    Brennan, Kevin F.

    1999-02-01

    Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

  6. Novel room temperature ferromagnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

    2004-06-01

    distribution of Mn substituting for Zn a 2+ state in the ZnO lattice. Ferromagnetic Resonance (FMR) technique is used to confirm the existence of ferromagnetic ordering at temperatures as high as 425K. The ab initio calculations were found to be consistent with the observation of ferromagnetism arising from fully polarized Mn 2+ state. The key to observed room temperature ferromagnetism in this system is the low temperature processing, which prevents formation of clusters, secondary phases and the host ZnO from becoming n-type. The electronic structure of the same Mn doped ZnO thin films studied using XAS, XES and RIXS, revealed a strong hybridization between Mn 3d and O 2p states, which is an important characteristic of a Dilute magnetic Semiconductor (DMS). It is shown that the various processing conditions like sintering temperature, dopant concentration and the properties of precursors used for making of DMS have a great influence on the final properties. Use of various experimental techniques to verify the physical properties, and to understand the mechanism involved to give rise to ferromagnetism is presented. Methods to improve the magnetic moment in Mn doped ZnO are also described. New promising DMS materials (such as Cu doped ZnO are explored). The demonstrated new capability to fabricate powder, pellets, and thin films of room temperature ferromagnetic semiconductors thus makes possible the realization of a wide range of complex elements for a variety of new multifunctional phenomena related to Spintronic devices as well as magneto-optic components.

  7. Electron-phonon coupling effect on wakefields in piezoelectric semiconductors

    International Nuclear Information System (INIS)

    Salimullah, M; Shukla, P K; Ghosh, S K; Nitta, H; Hayashi, Y

    2003-01-01

    Using an appropriate dielectric constant for an n-type piezoelectric semiconductor plasma and a moving test particle approach, it is shown that, besides the usual screened potential, there exists a non-Coulombian oscillatory potential or a wakefield behind a moving charged particle due to a strong resonant interaction between the charged particle and the electro-acoustic mode of the host semiconductor. With the concept of the wakefield, a possible lattice formation of colloids resulting from ion implantation in a current-carrying piezoelectric semiconductor has been examined

  8. Selection of efficient etchants for nondestructive treatment of semiconductors

    International Nuclear Information System (INIS)

    Tomashik, V.N.; Fomin, A.V.; Tomashik, Z.F.

    1996-01-01

    The scheme for studying etching processes of semiconductor materials and developing new etchants for different semiconductors is proposed. The scheme includes the experiment mathematical planning, computerized physicochemical modeling, kinetic studies, investigation of surface layers, formed by etching. Such on approach makes it possible to optimize the etchant composition in every concrete cage. The scheme is tested in the course of developing optimal methodologies of preepitaxial treatment and selection of etchants composition for semiconductor compounds of the A 1 B 6 and A 3 B 5 type. 13 refs., 4 figs

  9. Metal-semiconductor interface in extreme temperature conditions

    International Nuclear Information System (INIS)

    Bulat, L.P.; Erofeeva, I.A.; Vorobiev, Yu.V.; Gonzalez-Hernandez, J.

    2008-01-01

    We present an investigation of electrons' and phonons' temperatures in the volume of a semiconductor (or metal) sample and at the interface between metal and semiconductor. Two types of mismatch between electrons' and phonons' temperatures take place: at metal-semiconductor interfaces and in the volume of the sample. The temperature mismatch leads to nonlinear terms in expressions for heat and electricity transport. The nonlinear effects should be taken into consideration in the study of electrical and heat transport in composites and in electronic chips

  10. Experimental Methods for Implementing Graphene Contacts to Finite Bandgap Semiconductors

    DEFF Research Database (Denmark)

    Meyer-Holdt, Jakob

    Present Ph.D. thesis describes my work on implanting graphene as electrical contact to finite bandgap semiconductors. Different transistor architectures, types of graphene and finite bandgap semiconductors have been employed. The device planned from the beginning of my Ph.D. fellowship...... contacts to semiconductor nanowires, more specifically, epitaxially grown InAs nanowires. First, we tried a top down method where CVD graphene was deposited on substrate supported InAs nanowires followed by selective graphene ashing to define graphene electrodes. While electrical contact between...

  11. Thermodynamic concepts in semiconductor quantum dot technology

    International Nuclear Information System (INIS)

    Shchukin, V.

    2001-01-01

    Major trends of the modern civilization are related to the changing of the industrial society into an information and knowledge-based society. This transformation is to a large extent based on the modern information and communication technology. The nobel prize-2000 in physics is a remarkable recognition of an extremely high significance of this kind of technology. The nobel prize has been awarded with one half jointly to Zhores I. Alferov and Herbert Kroemer for developing semiconductor heterostructures used in high-speed- and opto-electronics and one half to Jack St. Clair Kilby for this part in the invention of the integrated circuit. The development of the semiconductor heterostructures technology requires a profound understanding of the basic growth mechanisms involved in any technological process, including any type of epitaxy, either the liquid phase epitaxy (LPE), or the metalorganic vapor phase epitaxy (MOVPE), or the molecular beam epitaxy (MBE). Starting from this pioneering works on semiconductor heterostructures till present time, Professor Zh. Alferov has always paid much attention to complex and comprehensive study of the subject. This covers the growth - as well as the post-growth technology including the theoretical modeling of the technology, the characterization of the heterostructures, and the device design. Such complex approach has master mined the scientific and technological success of Abraham loffe Institute in the area of semiconductor heterostructures, and later, nano structures. (Orig../A.B.)

  12. Growth of high purity semiconductor epitaxial layers by liquid phase ...

    Indian Academy of Sciences (India)

    Unknown

    semiconductor materials in high purity form by liquid phase epitaxy (LPE) technique. Various possible sources of impurities in such ... reference to the growth of GaAs layers. The technique of growing very high purity layers ... the inner walls of the gas lines and (e) the containers for storing, handling and cleaning of the mate-.

  13. Proportional gas scintillation detectors and their applications

    International Nuclear Information System (INIS)

    Petr, I.

    1978-01-01

    The principle is described of a gas proportional scintillation detector and its function. Dependence of Si(Li) and xenon proportional detectors energy resolution on the input window size is given. A typical design is shown of a xenon detector used for X-ray spetrometry at an energy of 277 eV to 5.898 keV and at a gas pressure of 98 to 270 kPa. Gas proportional scintillation detectors show considerable better energy resolution than common proportional counters and even better resolution than semiconductor Si(Li) detectors for low X radiation energies. For detection areas smaller than 25 mm 2 Si(Li) detectors show better resolution, especially for higher X radiation energies. For window areas 25 to 190 mm 2 both types of detectors are equal, for a window area exceeding 190 mm 2 the proportional scintillation detector has higher energy resolution. (B.S.)

  14. Effect of Gas Tungsten Arc Welding Parameters on Hydrogen-Assisted Cracking of Type 321 Stainless Steel

    Science.gov (United States)

    Rozenak, Paul; Unigovski, Yaakov; Shneck, Roni

    2016-05-01

    The susceptibility of AISI type 321 stainless steel welded by the gas tungsten arc welding (GTAW) process to hydrogen-assisted cracking (HAC) was studied in a tensile test combined with in situ cathodic charging. Specimen charging causes a decrease in ductility of both the as-received and welded specimens. The mechanical properties of welds depend on welding parameters. For example, the ultimate tensile strength and ductility increase with growing shielding gas (argon) rate. More severe decrease in the ductility was obtained after post-weld heat treatment (PWHT). In welded steels, in addition to discontinuous grain boundary carbides (M23C6) and dense distribution of metal carbides MC ((Ti, Nb)C) precipitated in the matrix, the appearance of delta-ferrite phase was observed. The fracture of sensitized specimens was predominantly intergranular, whereas the as-welded specimens exhibited mainly transgranular regions. High-dislocation density regions and stacking faults were found in delta-ferrite formed after welding. Besides, thin stacking fault plates and epsilon-martensite were found in the austenitic matrix after the cathodic charging.

  15. Oxygen partial pressure effects on the RF sputtered p-type NiO hydrogen gas sensors

    Science.gov (United States)

    Turgut, Erdal; Çoban, Ömer; Sarıtaş, Sevda; Tüzemen, Sebahattin; Yıldırım, Muhammet; Gür, Emre

    2018-03-01

    NiO thin films were grown by Radio Frequency (RF) Magnetron Sputtering method under different oxygen partial pressures, which are 0.6 mTorr, 1.3 mTorr and 2.0 mTorr. The effects of oxygen partial pressures on the thin films were analyzed through Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), X-ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS) and Hall measurements. The change in the surface morphology of the thin films has been observed with the SEM and AFM measurements. While nano-pyramids have been obtained on the thin film grown at the lowest oxygen partial pressure, the spherical granules lower than 60 nm in size has been observed for the samples grown at higher oxygen partial pressures. The shift in the dominant XRD peak is realized to the lower two theta angle with increasing the oxygen partial pressures. XPS measurements showed that the Ni2p peak involves satellite peaks and two oxidation states of Ni, Ni2+ and Ni3+, have been existed together with the corresponding splitting in O1s spectrum. P-type conductivity of the grown NiO thin films are confirmed by the Hall measurements with concentrations on the order of 1013 holes/cm-3. Gas sensor measurements revealed minimum of 10% response to the 10 ppm H2 level. Enhanced responsivity of the gas sensor devices of NiO thin films is shown as the oxygen partial pressure increases.

  16. Low-Temperature Synthesis and Gas Sensitivity of Perovskite-Type LaCoO3 Nanoparticles

    Directory of Open Access Journals (Sweden)

    Lorenzo Gildo Ortiz

    2014-01-01

    Full Text Available LaCoO3 nanoparticles with perovskite-type structure were prepared by a microwave-assisted colloidal method. Lanthanum nitrate, cobalt nitrate, and ethylenediamine were used as precursors and ethyl alcohol as solvent. The thermal decomposition of the precursors leads to the formation of LaCoO3 from a temperature of 500°C. The structural, morphological, and compositional properties of LaCoO3 nanoparticles were studied in this work by X-ray diffraction (XRD, scanning electron microscopy (SEM, transmission electron microscopy (TEM, and atomic force microscopy (AFM. Pellets were manufactured in order to test the gas sensing properties of LaCoO3 powders in carbon monoxide (CO and propane (C3H8 atmospheres. Agglomerates of nanoparticles with high connectivity, forming a porous structure, were observed from SEM and TEM analysis. LaCoO3 pellets presented a high sensitivity in both CO and C3H8 at different concentrations and operating temperatures. As was expected, sensitivity increased with the gas concentration and operation temperature increase.

  17. Mode of action of plectasin-derived peptides against gas gangrene-associated Clostridium perfringens type A.

    Directory of Open Access Journals (Sweden)

    Xueling Zheng

    Full Text Available NZ2114 and MP1102 are novel plectasin-derived peptides with potent activity against Gram-positive bacteria. The antibacterial characteristics and mechanism of NZ2114 and MP1102 against gas gangrene-associated Clostridium perfringens were studied for the first time. The minimal inhibitory concentration and minimal bactericidal concentration of NZ2114 and MP1102 against resistant C. perfringens type A strain CVCC 46 were 0.91 μM. Based on the fractional inhibitory concentration index (FICI result, an additive or synergic effect was observed between NZ2114 (FICI = 0.5~0.75 or MP1102 (FICI = 0.375~1.0 and antibiotics. The flow cytometry, scanning and transmission electron microscopy analysis showed that both NZ2114 and MP1102 induced obviously membrane damage, such as the leakage of cellular materials, partial disappearance of the cell membrane and membrane peeling, as well as retracting cytoplasm and ghost cell. The gel retardation and circular dichroism (CD detection showed that NZ2114 and MP1102 could bind to C. perfringens genomic DNA and change the DNA conformation. Moreover, NZ2114 also interfered with the double helix and unwind the genomic DNA. The cell cycle analysis showed that C. perfringens CVCC 46 cells exposed to NZ2114 and MP1102 were arrested at the phase I. These data indicated that both NZ2114 and MP1102 have potential as new antimicrobial agents for gas gangrene infection resulting from resistant C. perfringens.

  18. Sectoral shift in industrial natural gas demand: A comparison with other energy types

    International Nuclear Information System (INIS)

    Boyd, G.; Fisher, R.; Hanson, D.; Ross, M.

    1989-01-01

    It has been recognized in a variety of studies that energy demand by industry has been effected not only by the changing energy intensity of the various sectors of industry, but also by the composition of industrial sector. A previous study group of the Energy Modeling Forum (EMF-8) found that sectoral shift, i.e., the relative decline in the energy intensive sectors of industry, has contributed at least one third of the decline in aggregate manufacturing energy intensity since the early 1970s. The specific types of energy use may also be important, however. For example, the effect of shifts in production by electricity intensive sectors has been shown to be somewhat different than that for fossil fuel

  19. Irregular Liesegang-type patterns in gas phase revisited. II. Statistical correlation analysis

    Science.gov (United States)

    Torres-Guzmán, José C.; Martínez-Mekler, Gustavo; Müller, Markus F.

    2016-05-01

    We present a statistical analysis of Liesegang-type patterns formed in a gaseous HCl-NH3 system by ammonium chloride precipitation along glass tubes, as described in Paper I [J. C. Torres-Guzmán et al., J. Chem. Phys. 144, 174701 (2016)] of this work. We focus on the detection and characterization of short and long-range correlations within the non-stationary sequence of apparently irregular precipitation bands. To this end we applied several techniques to estimate spatial correlations stemming from different fields, namely, linear auto-correlation via the power spectral density, detrended fluctuation analysis (DFA), and methods developed in the context of random matrix theory (RMT). In particular RMT methods disclose well pronounced long-range correlations over at least 40 bands in terms of both, band positions and intensity values. By using a variant of the DFA we furnish proof of the nonlinear nature of the detected long-range correlations.

  20. Cold CO Gas in the Envelopes of FU Orionis-type Young Eruptive Stars

    Energy Technology Data Exchange (ETDEWEB)

    Kóspál, Á.; Ábrahám, P.; Moór, A. [Konkoly Observatory, Research Centre for Astronomy and Earth Sciences, Hungarian Academy of Sciences, Konkoly-Thege Miklós út 15-17, 1121 Budapest (Hungary); Csengeri, T.; Güsten, R. [Max-Planck-Institut für Radioastronomie, Auf dem Hügel 69, D-53121 Bonn (Germany); Henning, Th. [Max-Planck-Institut für Astronomie, Königstuhl 17, D-69117 Heidelberg (Germany)

    2017-02-20

    FU Orionis-type objects (FUors) are young stellar objects experiencing large optical outbursts due to highly enhanced accretion from the circumstellar disk onto the star. FUors are often surrounded by massive envelopes, which play a significant role in the outburst mechanism. Conversely, the subsequent eruptions might gradually clear up the obscuring envelope material and drive the protostar on its way to become a disk-only T Tauri star. Here we present an APEX {sup 12}CO and {sup 13}CO survey of eight southern and equatorial FUors. We measure the mass of the gaseous material surrounding our targets, locate the source of the CO emission, and derive physical parameters for the envelopes and outflows, where detected. Our results support the evolutionary scenario where FUors represent a transition phase from envelope-surrounded protostars to classical T Tauri stars.

  1. Effect of gas temperature on flow rate characteristics of an averaging pitot tube type flow meter

    Energy Technology Data Exchange (ETDEWEB)

    Yeo, Seung Hwa; Lee, Su Ryong; Lee, Choong Hoon [Seoul National University of Science and Technology, Seoul (Korea, Republic of)

    2015-01-15

    The flow rate characteristics passing through an averaging Pitot tube (APT) while constantly controlling the flow temperature were studied through experiments and CFD simulations. At controlled temperatures of 25, 50, 75, and 100 .deg .C, the flow characteristics, in this case the upstream, downstream and static pressure at the APT flow meter probe, were measured as the flow rate was increased. The flow rate through the APT flow meter was represented using the H-parameter (hydraulic height) obtained by a combination of the differential pressure and the air density measured at the APT flow meter probe. Four types of H-parameters were defined depending on the specific combination. The flow rate and the upstream, downstream and static pressures measured at the APT flow meter while changing the H-parameters were simulated by means of CFD. The flow rate curves showed different features depending on which type of H-parameter was used. When using the constant air density value in a standard state to calculate the H-parameters, the flow rate increased linearly with the H-parameter and the slope of the flow rate curve according to the H-parameter increased as the controlled target air temperature was increased. When using different air density levels corresponding to each target air temperature to calculate the H-parameter, the slope of the flow rate curve according to the H-parameter was constant and the flow rate curve could be represented by a single line. The CFD simulation results were in good agreement with the experimental results. The CFD simulations were performed while increasing the air temperature to 1200 K. The CFD simulation results for high air temperatures were similar to those at the low temperature ranging from 25 to 100 .deg. C.

  2. Effect of gas temperature on flow rate characteristics of an averaging pitot tube type flow meter

    International Nuclear Information System (INIS)

    Yeo, Seung Hwa; Lee, Su Ryong; Lee, Choong Hoon

    2015-01-01

    The flow rate characteristics passing through an averaging Pitot tube (APT) while constantly controlling the flow temperature were studied through experiments and CFD simulations. At controlled temperatures of 25, 50, 75, and 100 .deg .C, the flow characteristics, in this case the upstream, downstream and static pressure at the APT flow meter probe, were measured as the flow rate was increased. The flow rate through the APT flow meter was represented using the H-parameter (hydraulic height) obtained by a combination of the differential pressure and the air density measured at the APT flow meter probe. Four types of H-parameters were defined depending on the specific combination. The flow rate and the upstream, downstream and static pressures measured at the APT flow meter while changing the H-parameters were simulated by means of CFD. The flow rate curves showed different features depending on which type of H-parameter was used. When using the constant air density value in a standard state to calculate the H-parameters, the flow rate increased linearly with the H-parameter and the slope of the flow rate curve according to the H-parameter increased as the controlled target air temperature was increased. When using different air density levels corresponding to each target air temperature to calculate the H-parameter, the slope of the flow rate curve according to the H-parameter was constant and the flow rate curve could be represented by a single line. The CFD simulation results were in good agreement with the experimental results. The CFD simulations were performed while increasing the air temperature to 1200 K. The CFD simulation results for high air temperatures were similar to those at the low temperature ranging from 25 to 100 .deg. C.

  3. Report on achievement in the preceding research related to global industry technologies for the global industry technology research and development project. Research on gas systems substituting global warming gases such as PFC used in manufacturing semiconductors; 1998 nendo chikyu kankyo sangyo gijutsu ni kakawaru sendo kenkyu. Handotai seizo nado ni shiyosuru PFC nado no chikyu ondanka gas no daitai gas system no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    The present semiconductor manufacturing process uses a great amount of PFC having large global warming coefficients and extremely long atmospheric life. A research was made particularly on reduction of its emission from etching processes. After introducing how the semiconductor industry has been working conventionally on protection of the global environment, this paper makes clear the purpose and positioning of this preceding research, as well as how it is moved forward. The paper also reports the results of analyzing and discussing the exhaust gases from etching devices using several kinds of substitute PFC gases. Survey results are reported on the possibilities of new substitute gases, plasma decomposition and treatment of exhaust gases, reaction process simulation, and in-situ analyzing and evaluating technologies. Investigations were made on the possibility of using no PFC in wiring processes which consume greater amount of PFC, as well as on wiring techniques using inter-layer insulation film with low dielectric rate, a new wiring structure forming technology, new functional elements, circuits and systems in a wide range. Proposals were given on specific research and development themes and plans that begin in fiscal 1999. (NEDO)

  4. THE EFFECT OF TYPE ZEOLITE ON THE GAS TRANSPORT PROPERTIES OF POLYIMIDE-BASED MIXED MATRIX MEMBRANES

    Directory of Open Access Journals (Sweden)

    Tutuk Djoko Kusworo

    2012-01-01

    Full Text Available The permeation rates of O2, N2, CO2 and CH4 has been studied for polyimide-polyethersulfone (PI/PES blends-zeolite mixed matrix membranes synthesized in our laboratory. The study investigated the effect of zeolite loading and different zeolite type on the gas separation performance of these mixed matrix membranes. Frequency shifts and absorption intensity changes in the FTIR spectra of the PI/PES blends as compared with those of the pure polymers indicate that there is a mixing of polymer blends at the molecular level. Differential scanning calorimetry measurements of pure and PI/PES blends membranes have showed one unique glass transition temperature that supports the miscible character of the PI/PES mixture. The PI/PES-zeolite 4A mixed matrix membrane with 25 wt % zeolite loading produced the highest O2/N2 and CO2/CH4 selectivity of around 7.45 and 46.05, respectively.

  5. On the Time Variation of Dust Extinction and Gas Absorption for Type Ia Supernovae Observed through a Nonuniform Interstellar Medium

    Science.gov (United States)

    Huang, X.; Aldering, G.; Biederman, M.; Herger, B.

    2017-11-01

    For Type Ia supernovae (SNe Ia) observed through a nonuniform interstellar medium (ISM) in its host galaxy, we investigate whether the nonuniformity can cause observable time variations in dust extinction and in gas absorption due to the expansion of the SN photosphere with time. We show that, owing to the steep spectral index of the ISM density power spectrum, sizable density fluctuation amplitudes at the length scale of typical ISM structures (≳ 10 {pc}) will translate to much smaller fluctuations on the scales of an SN photosphere. Therefore, the typical amplitude of time variation due to a nonuniform ISM, of absorption equivalent widths, and of extinction, would be small. As a result, we conclude that nonuniform ISM density should not impact cosmology measurements based on SNe Ia. We apply our predictions based on the ISM density power-law power spectrum to the observations of two highly reddened SNe Ia, SN 2012cu and SN 2014J.

  6. The results of pre-design studies on the development of a new design of gas turbine compressor package of GPA-C-16 type

    Science.gov (United States)

    Smirnov, A. V.; Chobenko, V. M.; Shcherbakov, O. M.; Ushakov, S. M.; Parafiynyk, V. P.; Sereda, R. M.

    2017-08-01

    The article summarizes the results of analysis of data concerning the operation of turbocompressor packages at compressor stations for the natural gas transmission system of Ukraine. The basic requirements for gas turbine compressor packages used for modernization and reconstruction of compressor stations are considered. Using a 16 MW gas turbine package GPA-C-16S/76-1,44M1 as an example, the results of pre-design studies and some technical solutions that improve the energy efficiency of gas turbine compressor packages and their reliability, as well as its environmental performance are given. In particular, the article deals with the matching of performance characteristics of a centrifugal compressor (hereinafter compressor) and gas turbine drive to reduce fuel gas consumption; as well as application of energy efficient technologies, in particular, exhaust gas heat recovery units and gas-oil heat exchangers in turbocompressor packages oil system; as well as reducing emissions of carbon monoxide into the atmosphere using a catalytic exhaust system. Described technical solutions can be used for development of other types of gas turbine compressor packages.

  7. Raman spectra of Cu{sub 2}B{sup II}C{sup IV}X{sub 4}{sup VI} magnetic quaternary semiconductor compounds with tetragonal stannite type structure

    Energy Technology Data Exchange (ETDEWEB)

    Rincón, C., E-mail: crincon@ula.ve; Quintero, M.; Power, Ch.; Moreno, E.; Quintero, E.; Morocoima, M. [Centro de Estudios de Semiconductores, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida (Venezuela, Bolivarian Republic of); Henao, J. A.; Macías, M. A. [Grupo de Investigación en Química Estructural, Facultad de Ciencias, Escuela de Química, Universidad Industrial de Santander, Apartado Aéreo 678, Bucaramanga (Colombia)

    2015-05-28

    A comparative study of the Raman spectra of Cu{sub 2}B{sup II}C{sup IV}S{sub 4}{sup VI} and Cu{sub 2}B{sup II}C{sup IV}Se{sub 4}{sup VI}(where B = Mn or Fe) magnetic quaternary semiconductor compounds with stannite-type structure (I4{sup ¯}2m) has been done. Most of the fourteen Raman lines expected for these materials were observed in the spectra. The two strongest lines observed have been assigned to the IR inactive A{sub 1}{sup 1} and A{sub 1}{sup 2} stannite modes that originated from the motion of the S or Se anion around the Cu and C{sup IV} cations remaining at rest. The shift in the frequency of these two lines of about 150 cm{sup −1} to lower energies observed in Cu{sub 2}B{sup II}C{sup IV}Se{sub 4}{sup VI} compounds as compared to those in Cu{sub 2}B{sup II}C{sup IV}S{sub 4}{sup VI} ones, can then be explained as due to the anion mass effect. Based on the fact that values of these frequencies depend mainly on anion mass and bond-stretching forces between nearest-neighbor atoms, the vibrational frequencies v{sup ¯}(A{sub 1}{sup 2}) and v{sup ¯}(A{sub 1}{sup 2}) of both modes for several Cu{sub 2}B{sup II}C{sup IV}X{sub 4}{sup VI} stannite compounds (where X = S, Se, or Te) very close to the experimental data reported for these materials were calculated from a simple model that relates these stretching forces to the anion-cation bond-distances.

  8. Effects of ion sputtering on semiconductor surfaces

    International Nuclear Information System (INIS)

    McGuire, G.E.

    1978-01-01

    Ion beam sputtering has been combined with Auger spectroscopy to study the effects of ion beams on semiconductor surfaces. Observations on the mass dependence of ion selective sputtering of two component systems are presented. The effects of ion implantation are explained in terms of atomic dilution. Experimental data are presented that illustrate the super-position of selective sputtering and implantation effects on the surface composition. Sample reduction from electron and ion beam interaction is illustrated. Apparent sample changes which one might observe from the effects of residual gas contamination and electric fields are also discussed. (Auth.)

  9. Determination of amphetamine-type stimulants in oral fluid by solid-phase microextraction and gas chromatography-mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Souza, Daniele Z., E-mail: daniele.dzs@dpf.gov.br [Setor Tecnico-Cientifico, Superintendencia Regional do Departamento de Policia Federal no Rio Grande do Sul, 1365 Ipiranga Avenue, Azenha, Zip Code 90160-093 Porto Alegre, Rio Grande do Sul (Brazil); Programa de Pos-Graduacao em Ciencias Farmaceuticas, Faculdade de Farmacia, Universidade Federal do Rio Grande do Sul, 2752 Ipiranga Avenue, Santana, Zip Code 90610-000 Porto Alegre, Rio Grande do Sul (Brazil); Boehl, Paula O.; Comiran, Eloisa; Mariotti, Kristiane C. [Programa de Pos-Graduacao em Ciencias Farmaceuticas, Faculdade de Farmacia, Universidade Federal do Rio Grande do Sul, 2752 Ipiranga Avenue, Santana, Zip Code 90610-000 Porto Alegre, Rio Grande do Sul (Brazil); Pechansky, Flavio [Centro de Pesquisa em Alcool e Drogas (CPAD), Hospital de Clinicas de Porto Alegre, Universidade Federal do Rio Grande do Sul, 2350, Ramiro Barcelos Street, Zip Code 90035-903 Porto Alegre, Rio Grande do Sul (Brazil); Duarte, Paulina C.A.V. [Secretaria Nacional de Politicas sobre Drogas (SENAD), Esplanada dos Ministerios, Block ' A' , 5th floor, Zip Code 70050-907 Brasilia, Distrito Federal (Brazil); De Boni, Raquel [Centro de Pesquisa em Alcool e Drogas (CPAD), Hospital de Clinicas de Porto Alegre, Universidade Federal do Rio Grande do Sul, 2350, Ramiro Barcelos Street, Zip Code 90035-903 Porto Alegre, Rio Grande do Sul (Brazil); Froehlich, Pedro E.; Limberger, Renata P. [Programa de Pos-Graduacao em Ciencias Farmaceuticas, Faculdade de Farmacia, Universidade Federal do Rio Grande do Sul, 2752 Ipiranga Avenue, Santana, Zip Code 90610-000 Porto Alegre, Rio Grande do Sul (Brazil)

    2011-06-24

    Graphical abstract: Highlights: > Propylchloroformate derivatization of amphetamine-type stimulants in oral fluid. > Direct immersion solid-phase microextraction/gas chromatography-mass spectrometry. > Linear range 2(4)-256 ng mL{sup -1}, detection limits 0.5-2 ng mL{sup -1}. > Accuracy 98-112%, precision <15% of RSD, recovery 77-112%. > Importance of residual evaluation in checking model goodness-of-fit. - Abstract: A method for the simultaneous identification and quantification of amphetamine (AMP), methamphetamine (MET), fenproporex (FEN), diethylpropion (DIE) and methylphenidate (MPH) in oral fluid collected with Quantisal{sup TM} device has been developed and validated. Thereunto, in-matrix propylchloroformate derivatization followed by direct immersion solid-phase microextraction and gas chromatography-mass spectrometry were employed. Deuterium labeled AMP was used as internal standard for all the stimulants and analysis was performed using the selected ion monitoring mode. The detector response was linear for the studied drugs in the concentration range of 2-256 ng mL{sup -1} (neat oral fluid), except for FEN, whereas the linear range was 4-256 ng mL{sup -1}. The detection limits were 0.5 ng mL{sup -1} (MET), 1 ng mL{sup -1} (MPH) and 2 ng mL{sup -1} (DIE, AMP, FEN), respectively. Accuracy of quality control samples remained within 98.2-111.9% of the target concentrations, while precision has not exceeded 15% of the relative standard deviation. Recoveries with Quantisal{sup TM} device ranged from 77.2% to 112.1%. Also, the goodness-of-fit concerning the ordinary least squares model in the statistical inference of data has been tested through residual plotting and ANOVA. The validated method can be easily automated and then used for screening and confirmation of amphetamine-type stimulants in drivers' oral fluid.

  10. Determination of amphetamine-type stimulants in oral fluid by solid-phase microextraction and gas chromatography-mass spectrometry

    International Nuclear Information System (INIS)

    Souza, Daniele Z.; Boehl, Paula O.; Comiran, Eloisa; Mariotti, Kristiane C.; Pechansky, Flavio; Duarte, Paulina C.A.V.; De Boni, Raquel; Froehlich, Pedro E.; Limberger, Renata P.

    2011-01-01

    Graphical abstract: Highlights: → Propylchloroformate derivatization of amphetamine-type stimulants in oral fluid. → Direct immersion solid-phase microextraction/gas chromatography-mass spectrometry. → Linear range 2(4)-256 ng mL -1 , detection limits 0.5-2 ng mL -1 . → Accuracy 98-112%, precision TM device has been developed and validated. Thereunto, in-matrix propylchloroformate derivatization followed by direct immersion solid-phase microextraction and gas chromatography-mass spectrometry were employed. Deuterium labeled AMP was used as internal standard for all the stimulants and analysis was performed using the selected ion monitoring mode. The detector response was linear for the studied drugs in the concentration range of 2-256 ng mL -1 (neat oral fluid), except for FEN, whereas the linear range was 4-256 ng mL -1 . The detection limits were 0.5 ng mL -1 (MET), 1 ng mL -1 (MPH) and 2 ng mL -1 (DIE, AMP, FEN), respectively. Accuracy of quality control samples remained within 98.2-111.9% of the target concentrations, while precision has not exceeded 15% of the relative standard deviation. Recoveries with Quantisal TM device ranged from 77.2% to 112.1%. Also, the goodness-of-fit concerning the ordinary least squares model in the statistical inference of data has been tested through residual plotting and ANOVA. The validated method can be easily automated and then used for screening and confirmation of amphetamine-type stimulants in drivers' oral fluid.

  11. Ring cavity surface emitting semiconductor lasers

    International Nuclear Information System (INIS)

    Mujagic, E.

    2010-01-01

    Quantum cascade lasers (QCLs) are electrically driven semiconductor lasers, which have undergone a steady improvement since the first demonstration in 1994. These are now well established as reliable sources of coherent light in the mid-infrared (MIR) and terahertz (THz)range of the electromagnetic spectrum (3-300 μm). The rapid progress of this type of lasers is based on a high degree of freedom in tailoring the emission wavelength within a large variety of semiconductor heterostructure designs and materials. These properties have attracted the attention of various applications such as gas analysis, chemical sensing, spectral imaging and free-space telecommunication. In order to improve the selectivity, sensitivity and efficiency of today's sensor systems, high optical power, continuous wave and room temperature performance, single-mode operation and low divergence optical beams, are highly desirable qualities of a compact laser source in this field of research. Since all of these features cannot be provided by a conventional edge-emitting device at the same time, research has put focus on the development of surface emitting devices. Nowadays, the vertical cavity surface emitting lasers (VCSELs) are the most prominent representative for this type of light emitters. With its capability of producing narrow circular beams, the feasibility of two-dimensional arrays and on-wafer testing, such a coherent light source results in a reduction of the fabrication effort and production costs. Since the radiation in QCLs is strictly polarized normal to the epitaxial layer plane, fabrication of VCSELs based on QC structures is not viable. The subject of this work is the design and realization of 'ring cavity surface emitting lasers' (ring-CSELs). This type of lasers employs a circular ring cavity and a resonant distributed feedback (DFB) surface grating. Ring-CSELs were fabricated on the basis of MIR and THz QC structures, which cover a wavelength range from 4 μm to 93

  12. Tunneling spectroscopy on semiconductors with a low surface state density

    OpenAIRE

    Sommerhalter, Christof; Matthes, Thomas W.; Boneberg, Johannes; Leiderer, Paul; Lux-Steiner, Martha Christina

    1997-01-01

    A detailed study of tunneling spectroscopy concerning semiconductors with a low surface state density is presented. For this purpose, I V curves under dark conditions and under illumination were measured on the (0001) van der Waals surface of a p-type WS2 single crystal, which is known to be free of intrinsic surface states. The measurements are interpreted by an analytical one-dimensional metal-insulator-semiconductor model, which shows that the presence of the finite tunneling current has ...

  13. Elemental gas-phase abundances of intermediate redshift type Ia supernova star-forming host galaxies

    Science.gov (United States)

    Moreno-Raya, M. E.; Galbany, L.; López-Sánchez, Á. R.; Mollá, M.; González-Gaitán, S.; Vílchez, J. M.; Carnero, A.

    2018-05-01

    The maximum luminosity of type Ia supernovae (SNe Ia) depends on the oxygen abundance of the regions of the host galaxies, where they explode. This metallicity dependence reduces the dispersion in the Hubble diagram (HD) when included with the traditional two-parameter calibration of SN Ia light-curve parameters and absolute magnitude. In this work, we use empirical calibrations to carefully estimate the oxygen abundance of galaxies hosting SNe Ia from the SDSS-II/SN (Sloan Digital Sky Survey-II Supernova) survey at intermediate redshift by measuring their emission-line intensities. We also derive electronic temperature with the direct method for a small fraction of objects for consistency. We find a trend of decreasing oxygen abundance with increasing redshift for the most massive galaxies. Moreover, we study the dependence of the HD residuals (HR) with galaxy oxygen abundance obtaining a correlation in line with those found in other works. In particular, the HR versus oxygen abundance shows a slope of -0.186 ± 0.123 mag dex-1 (1.52σ) in good agreement with theoretical expectations. This implies smaller distance modulii after corrections for SNe Ia in metal-rich galaxies. Based on our previous results on local SNe Ia, we propose this dependence to be due to the lower luminosity of the SNe Ia produced in more metal-rich environments.

  14. Changes in Trace Gas Nitrogen Emissions as a Response to Ecosystem Type Conversion in a Semi-Arid Climate.

    Science.gov (United States)

    Andrews, H.; Eberwein, J. R.; Jenerette, D.

    2016-12-01

    As humans continue to introduce exotic plants and to alter climate and fire regimes in semi-arid ecosystems, many plant communities have begun to shift from perennial forbs and shrubs to annual grasses with different functional traits. Shifts in plant types are also associated with shifts in microclimate, microbial activity, and litter inputs, all of which contribute to the efficiency of nitrogen processing and the magnitude of trace gas emissions (NOx and N2O), which are increasingly important fluxes in water-limited systems. Here, we explored how changes in plant litter impact trace gas emissions, asking the question: How does conversion from a native shrubland to exotic grassland ecosystem alter NOx and N2O fluxes in a semi-arid climate? We posed two hypotheses to explain the impacts of different types of litter on soils disturbed by exotic grasses and those that were still considered shrublands: 1.) Soils that have undergone conversion by exotic grasses release higher amounts of NOx and N2O than do those of unconverted shrublands, due to disruptions of native plant and soil processes by exotic grasses, and 2.) Because litter of exotic grasses has lower C:N than that of shrubs, litter inputs from exotic grasses will increase NOx and N2O emissions from soils more than will litter inputs from shrubs. As a preliminary study, we experimentally wetted mesocosms in a laboratory incubation containing converted and unconverted soils that had been mixed with no litter or either exotic grass or coastal sage scrub (CSS) litter. We measured N2O fluxes from mesocosms over a 48-hour period. 24 hours after wetting, samples with grass litter produced higher amounts of N2O than those with CSS litter; similarly, converted soils produced higher amounts of N2O than unconverted soils. These two effects combined resulted in exotic grassland conditions (converted soils with exotic grass litter) producing 10 times the amount of N2O as those containing native shrubland conditions

  15. Low drift type N thermocouples in out-of-pile advanced gas reactor mock-up test: metallurgical analysis

    International Nuclear Information System (INIS)

    Scervini, M.; Palmer, J.; Haggard, D.C.; Swank, W.D.

    2015-01-01

    Thermocouples are the most commonly used sensors for temperature measurement in nuclear reactors. They are crucial for the control of current nuclear reactors and for the development of GEN IV reactors. In nuclear applications thermocouples are strongly affected by intense neutron fluxes. As a result of the interaction with neutrons, the thermoelements of the thermocouples undergo transmutation, which produces a time dependent change in composition and, as a consequence, a time dependent drift of the thermocouple signal. Thermocouple drift can be very significant for in-pile temperature measurements and may render the temperature sensors unreliable after exposure to nuclear radiation for relatively short times compared to the life required for temperature sensors in nuclear applications. Previous experiences with type K thermocouples in nuclear reactors have shown that they are affected by neutron irradiation only to a limited extent. Similarly type N thermocouples are expected to be only slightly affected by neutron fluxes. Currently the use of Nickel based thermocouples is limited to temperatures lower than 1000 deg. C due to drift related to phenomena other than nuclear irradiation. As part of a collaboration between Idaho National Laboratory (INL) and the University of Cambridge a variety of Type N thermocouples have been exposed at INL in an Advanced Gas Reactor mock-up test at 1150 deg. C for 2000 h, 1200 deg. C for 2000 h, 125 deg. C for 200 h and 1300 deg. C for 200 h, and later analysed metallurgically at the University of Cambridge. The use of electron microscopy allows to identify the metallurgical changes occurring in the thermocouples during high temperature exposure and correlate the time dependent thermocouple drift with the microscopic changes experienced by the thermoelements of different thermocouple designs. In this paper conventional Inconel 600 sheathed type N thermocouples and a type N using a customized sheath developed at the University of

  16. Low drift type N thermocouples in out-of-pile advanced gas reactor mock-up test: metallurgical analysis

    Energy Technology Data Exchange (ETDEWEB)

    Scervini, M. [University of Cambridge, Department of Materials Science and Metallurgy, 27 Charles Babbage Road, CB30FS Cambridge, (United Kingdom); Palmer, J.; Haggard, D.C.; Swank, W.D. [Idaho National Laboratory, Idaho Falls, ID 83415-3840, (United States)

    2015-07-01

    Thermocouples are the most commonly used sensors for temperature measurement in nuclear reactors. They are crucial for the control of current nuclear reactors and for the development of GEN IV reactors. In nuclear applications thermocouples are strongly affected by intense neutron fluxes. As a result of the interaction with neutrons, the thermoelements of the thermocouples undergo transmutation, which produces a time dependent change in composition and, as a consequence, a time dependent drift of the thermocouple signal. Thermocouple drift can be very significant for in-pile temperature measurements and may render the temperature sensors unreliable after exposure to nuclear radiation for relatively short times compared to the life required for temperature sensors in nuclear applications. Previous experiences with type K thermocouples in nuclear reactors have shown that they are affected by neutron irradiation only to a limited extent. Similarly type N thermocouples are expected to be only slightly affected by neutron fluxes. Currently the use of Nickel based thermocouples is limited to temperatures lower than 1000 deg. C due to drift related to phenomena other than nuclear irradiation. As part of a collaboration between Idaho National Laboratory (INL) and the University of Cambridge a variety of Type N thermocouples have been exposed at INL in an Advanced Gas Reactor mock-up test at 1150 deg. C for 2000 h, 1200 deg. C for 2000 h, 125 deg. C for 200 h and 1300 deg. C for 200 h, and later analysed metallurgically at the University of Cambridge. The use of electron microscopy allows to identify the metallurgical changes occurring in the thermocouples during high temperature exposure and correlate the time dependent thermocouple drift with the microscopic changes experienced by the thermoelements of different thermocouple designs. In this paper conventional Inconel 600 sheathed type N thermocouples and a type N using a customized sheath developed at the University of

  17. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  18. Basic properties of semiconductors

    CERN Document Server

    Landsberg, PT

    2013-01-01

    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  19. Electrowetting on semiconductors

    Science.gov (United States)

    Palma, Cesar; Deegan, Robert

    2015-01-01

    Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

  20. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  1. Ge{sub 1−x}Si{sub x} on Ge-based n-type metal–oxide semiconductor field-effect transistors by device simulation combined with high-order stress–piezoresistive relationships

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Chang-Chun, E-mail: changchunlee@cycu.edu.tw [Department of Mechanical Engineering, Chung Yuan Christian University 200, Chung Pei Rd., Chungli City, Taoyuan County 32023, Taiwan, ROC (China); Hsieh, Chia-Ping [Department of Mechanical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan, ROC (China); Huang, Pei-Chen; Cheng, Sen-Wen [Department of Mechanical Engineering, Chung Yuan Christian University 200, Chung Pei Rd., Chungli City, Taoyuan County 32023, Taiwan, ROC (China); Liao, Ming-Han [Department of Mechanical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan, ROC (China)

    2016-03-01

    The considerably high carrier mobility of Ge makes Ge-based channels a promising candidate for enhancing the performance of next-generation devices. The n-type metal–oxide semiconductor field-effect transistor (nMOSFET) is fabricated by introducing the epitaxial growth of high-quality Ge-rich Ge{sub 1−x}Si{sub x} alloys in source/drain (S/D) regions. However, the short channel effect is rarely considered in the performance analysis of Ge-based devices. In this study, the gate-width dependence of a 20 nm Ge-based nMOSFET on electron mobility is investigated. This investigation uses simulated fabrication procedures combined with the relationship of the interaction between stress components and piezoresistive coefficients at high-order terms. Ge{sub 1−x}Si{sub x} alloys, namely, Ge{sub 0.96}Si{sub 0.04}, Ge{sub 0.93}Si{sub 0.07}, and Ge{sub 0.86}Si{sub 0.14}, are individually tested and embedded into the S/D region of the proposed device layout and are used in the model of stress estimation. Moreover, a 1.0 GPa tensile contact etching stop layer (CESL) is induced to explore the effect of bi-axial stress on device geometry and subsequent mobility variation. Gate widths ranging from 30 nm to 4 μm are examined. Results show a significant change in stress when the width is < 300 nm. This phenomenon becomes notable when the Si in the Ge{sub 1−x}Si{sub x} alloy is increased. The stress contours of the Ge channel confirm the high stress components induced by the Ge{sub 0.86}Si{sub 0.14} stressor within the device channel. Furthermore, the stresses (S{sub yy}) of the channel in the transverse direction become tensile when CESL is introduced. Furthermore, when pure S/D Ge{sub 1−x}Si{sub x} alloys are used, a maximum mobility gain of 28.6% occurs with an ~ 70 nm gate width. A 58.4% increase in mobility gain is obtained when a 1.0 GPa CESL is loaded. However, results indicate that gate width is extended to 200 nm at this point. - Highlights: • A 20 nm Ge-based n

  2. Transparent Oxide Semiconductors for Emerging Electronics

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso

    2013-11-01

    Transparent oxide electronics have emerged as promising materials to shape the future of electronics. While several n-type oxides have been already studied and demonstrated feasibility to be used as active materials in thin film transistors, high performance p-type oxides have remained elusive. This dissertation is devoted to the study of transparent p-type oxide semiconductor tin monoxide and its use in the fabrication of field effect devices. A complete study on the deposition of tin monoxide thin films by direct current reactive magnetron sputtering is performed. Carrier density, carrier mobility and conductivity are studied over a set of deposition conditions where p-type conduction is observed. Density functional theory simulations are performed in order to elucidate the effect of native defects on carrier mobility. The findings on the electrical properties of SnO thin films are then translated to the fabrication of thin films transistors. The low processing temperature of tin monoxide thin films below 200 oC is shown advantageous for the fabrication of fully transparent and flexible thin film transistors. After careful device engineering, including post deposition annealing temperature, gate dielectric material, semiconductor thickness and source and drain electrodes material, thin film transistors with record device performance are demonstrated, achieving a field effect mobility >6.7 cm2V-1s-1. Device performance is further improved to reach a field effect mobility of 10.8 cm2V-1s-1 in SnO nanowire field effect transistors fabricated from the sputtered SnO thin films and patterned by electron beam lithography. Downscaling device dimension to nano scale is shown beneficial for SnO field effect devices not only by achieving a higher hole mobility but enhancing the overall device performance including better threshold voltage, subthreshold swing and lower number of interfacial defects. Use of p-type semiconductors in nonvolatile memory applications is then

  3. Gas sensing in 2D materials

    Science.gov (United States)

    Yang, Shengxue; Jiang, Chengbao; Wei, Su-huai

    2017-06-01

    Two-dimensional (2D) layered inorganic nanomaterials have attracted huge attention due to their unique electronic structures, as well as extraordinary physical and chemical properties for use in electronics, optoelectronics, spintronics, catalysts, energy generation and storage, and chemical sensors. Graphene and related layered inorganic analogues have shown great potential for gas-sensing applications because of their large specific surface areas and strong surface activities. This review aims to discuss the latest advancements in the 2D layered inorganic materials for gas sensors. We first elaborate the gas-sensing mechanisms and introduce various types of gas-sensing devices. Then, we describe the basic parameters and influence factors of the gas sensors to further enhance their performance. Moreover, we systematically present the current gas-sensing applications based on graphene, graphene oxide (GO), reduced graphene oxide (rGO), functionalized GO or rGO, transition metal dichalcogenides, layered III-VI semiconductors, layered metal oxides, phosphorene, hexagonal boron nitride, etc. Finally, we conclude the future prospects of these layered inorganic materials in gas-sensing applications.

  4. Fluid inclusion gas chemistry in east Tennessee Mississippi Valley-type districts: Evidence for immiscibility and implications for depositional mechanisms

    Energy Technology Data Exchange (ETDEWEB)

    Jones, H.D.; Kesler, S.E. (Univ. of Michigan, Ann Arbor (United States))

    1992-01-01

    Analyses of fluid inclusion gases from Mississippi Valley-type districts in east Tennessee reveal the presence of several distinct aqueous solutions and vapors that were part of the mineralizing process. Inclusion contents were released by crushing 5 to 25 mg mineral samples and by decrepitating individual inclusions; all analyses were obtained by quadrupole mass spectrometry. Most analyzed inclusion fluids consist of H{sub 2}O with significant amounts of CH{sub 4} (0.3 to 2.9 mol%), CO{sub 2} (0.1 to 4.7 mol%), and smaller amounts of C{sub 2}H{sub 6}, C{sub 3}H{sub 8}, H{sub 2}S, SO{sub 2}, N{sub 2}, and Ar. Compositional similarities in the inclusion fluids from three districts imply that mineralization probably formed from fluids that permeated the entire region. Saturation pressures calculated for these fluid compositions range from 300 to 2,200 bars. Burial depths for the host unit have been estimated to be about 2 to 3 km during Devonian time, the age of mineralization indicated by recent isotopic ages. Exsolution of a vapor phase from the mineralizing brines should cause precipitation of carbonate and sulfide minerals, but reaction path modeling indicates that the resulting sparry dolomite:sphalerite ratios would be too high to form an ore-grade deposit. If the vapor phase was from a preexisting sour gas cap that was intercepted by a Zn-rich brine, large amounts of spalerite would precipitate in a fairly small region. Preliminary mass balance calculations suggest that a gas cap of dimensions similar to the individual districts in east Tennessee could have contained enough H{sub 2}S to account for the total amount of sphalerite precipitated.

  5. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  6. Electronic structure of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  7. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  8. Semiconductor photocatalysis principles and applications

    CERN Document Server

    Kisch, Horst

    2014-01-01

    Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

  9. Progress in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Walton, J.; Gatti, E.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

  10. Semiconductor materials and their properties

    NARCIS (Netherlands)

    Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre

    2017-01-01

    Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

  11. Optical coherent control in semiconductors

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

  12. Terahertz Nonlinear Optics in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

  13. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  14. Effect of organic matter properties, clay mineral type and thermal maturity on gas adsorption in organic-rich shale systems

    Science.gov (United States)

    Zhang, Tongwei; Ellis, Geoffrey S.; Ruppel, Stephen C.; Milliken, Kitty; Lewan, Mike; Sun, Xun; Baez, Luis; Beeney, Ken; Sonnenberg, Steve

    2013-01-01

    A series of CH4 adsorption experiments on natural organic-rich shales, isolated kerogen, clay-rich rocks, and artificially matured Woodford Shale samples were conducted under dry conditions. Our results indicate that physisorption is a dominant process for CH4 sorption, both on organic-rich shales and clay minerals. The Brunauer–Emmett–Teller (BET) surface area of the investigated samples is linearly correlated with the CH4 sorption capacity in both organic-rich shales and clay-rich rocks. The presence of organic matter is a primary control on gas adsorption in shale-gas systems, and the gas-sorption capacity is determined by total organic carbon (TOC) content, organic-matter type, and thermal maturity. A large number of nanopores, in the 2–50 nm size range, were created during organic-matter thermal decomposition, and they significantly contributed to the surface area. Consequently, methane-sorption capacity increases with increasing thermal maturity due to the presence of nanopores produced during organic-matter decomposition. Furthermore, CH4 sorption on clay minerals is mainly controlled by the type of clay mineral present. In terms of relative CH4 sorption capacity: montmorillonite ≫ illite – smectite mixed layer > kaolinite > chlorite > illite. The effect of rock properties (organic matter content, type, maturity, and clay minerals) on CH4 adsorption can be quantified with the heat of adsorption and the standard entropy, which are determined from adsorption isotherms at different temperatures. For clay-mineral rich rocks, the heat of adsorption (q) ranges from 9.4 to 16.6 kJ/mol. These values are considerably smaller than those for CH4 adsorption on kerogen (21.9–28 kJ/mol) and organic-rich shales (15.1–18.4 kJ/mol). The standard entropy (Δs°) ranges from -64.8 to -79.5 J/mol/K for clay minerals, -68.1 to -111.3 J/mol/K for kerogen, and -76.0 to -84.6 J/mol/K for organic-rich shales. The affinity of CH4 molecules for sorption on organic matter

  15. Method of plasma etching Ga-based compound semiconductors

    Science.gov (United States)

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  16. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  17. Imaging the motion of electrons across semiconductor heterojunctions

    Science.gov (United States)

    Man, Michael K. L.; Margiolakis, Athanasios; Deckoff-Jones, Skylar; Harada, Takaaki; Wong, E. Laine; Krishna, M. Bala Murali; Madéo, Julien; Winchester, Andrew; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel M.; Dani, Keshav M.

    2017-01-01

    Technological progress since the late twentieth century has centred on semiconductor devices, such as transistors, diodes and solar cells. At the heart of these devices is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. Here, by combining femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy, we imaged the motion of photoexcited electrons from high-energy to low-energy states in a type-II 2D InSe/GaAs heterostructure. At the instant of photoexcitation, energy-resolved photoelectron images revealed a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observed the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we produced a movie lasting a few trillionths of a second of the electron-transfer process in the photoexcited type-II heterostructure—a fundamental phenomenon in semiconductor devices such as solar cells. Quantitative analysis and theoretical modelling of spatial variations in the movie provide insight into future solar cells, 2D materials and other semiconductor devices.

  18. Semiconductor industry wafer fab exhaust management

    CERN Document Server

    Sherer, Michael J

    2005-01-01

    Given the myriad exhaust compounds and the corresponding problems that they can pose in an exhaust management system, the proper choice of such systems is a complex task. Presenting the fundamentals, technical details, and general solutions to real-world problems, Semiconductor Industry: Wafer Fab Exhaust Management offers practical guidance on selecting an appropriate system for a given application. Using examples that provide a clear understanding of the concepts discussed, Sherer covers facility layout, support facilities operations, and semiconductor process equipment, followed by exhaust types and challenges. He reviews exhaust point-of-use devices and exhaust line requirements needed between process equipment and the centralized exhaust system. The book includes information on wet scrubbers for a centralized acid exhaust system and a centralized ammonia exhaust system and on centralized equipment to control volatile organic compounds. It concludes with a chapter devoted to emergency releases and a separ...

  19. Catalyzed reactions at illuminated semiconductor interfaces

    International Nuclear Information System (INIS)

    Wrighton, M.S.

    1984-01-01

    Many desirable minority carrier chemical redox processes are too slow to compete with e - -h + recombination at illuminated semiconductor/liquid electrolyte junction interfaces. Reductions of H 2 O to H 2 or CO 2 to compounds having C--H bonds are too slow to compete with e - -h + recombination at illuminated p-type semiconductors, for example. Approaches to improve the rate of the desired processes involving surface modification techniques are described. Photoanodes are plagued by the additional problem of oxidative decomposition under illumination with > or =E/sub g/ illumination. The photo-oxidation of Cl - , Br - , and H 2 O is considered to illustrate the concepts involved. Proof of concept experiments establish that catalysis can be effective in dramatically improving direct solar fuel production; efficiencies of >10% have been demonstrated

  20. Dissolved hydrogen and oxygen sensors using semiconductor devices

    International Nuclear Information System (INIS)

    Hara, Nobuyoshi; Sugimoto, Katsuhisa

    1995-01-01

    The concentrations of DH and DO in aqueous solution are the factors that determine the equilibrium potential of hydrogen and oxygen electrode reactions, respectively, and are the quantities which directly related to the rates of hydrogen generation type and oxygen consumption type corrosion reactions, therefore, they have the important meaning in the electrochemistry of corrosion. In the hydrogen injection into BWR cooling water, the concentration of hydrogen must be controlled strictly, accordingly DH and DO sensors and electrochemical potential sensors are required. For the chemical sensors used in reactor cooling water, the perfectly solid state sensors made of high corrosion resistance materials, which are small size and withstand high temperature and high pressure, must be developed. The structure and the characteristics of the semiconductor devices used as gas sensors, and the principles of DH and DO sensors are described. If the idea of porous or discontinuous membrane gate is developed, the ion sensor of solid structure with one-body reference electrode may be made. (K.I.)

  1. Point Defects in Two-Dimensional Layered Semiconductors: Physics and Its Applications

    Science.gov (United States)

    Suh, Joonki

    Recent advances in material science and semiconductor processing have been achieved largely based on in-depth understanding, efficient management and advanced application of point defects in host semiconductors, thus finding the relevant techniques such as doping and defect engineering as a traditional scientific and technological solution. Meanwhile, two- dimensional (2D) layered semiconductors currently draw tremendous attentions due to industrial needs and their rich physics at the nanoscale; as we approach the end of critical device dimensions in silicon-based technology, ultra-thin semiconductors have the potential as next- generation channel materials, and new physics also emerges at such reduced dimensions where confinement of electrons, phonons, and other quasi-particles is significant. It is therefore rewarding and interesting to understand and redefine the impact of lattice defects by investigating their interactions with energy/charge carriers of the host matter. Potentially, the established understanding will provide unprecedented opportunities for realizing new functionalities and enhancing the performance of energy harvesting and optoelectronic devices. In this thesis, multiple novel 2D layered semiconductors, such as bismuth and transition- metal chalcogenides, are explored. Following an introduction of conventional effects induced by point defects in semiconductors, the related physics of electronically active amphoteric defects is revisited in greater details. This can elucidate the complication of a two-dimensional electron gas coexisting with the topological states on the surface of bismuth chalcogenides, recently suggested as topological insulators. Therefore, native point defects are still one of the keys to understand and exploit topological insulators. In addition to from a fundamental science point of view, the effects of point defects on the integrated thermal-electrical transport, as well as the entropy-transporting process in

  2. Application of gas geochemistry in the search for different types of uranium deposits. Final report for the period 15 November 1991 - 15 March 1994

    International Nuclear Information System (INIS)

    Chen Guoliang

    1994-10-01

    This paper presents the study of primary and secondary gas halo and application in the search for different types of uranium deposits in China. Through measuring Rn, CO 2 , O 2 and Hg in various deposits of geographical and climatic conditions for the gas geochemical survey. Three comprehensive measuring methods of CO 2 , Rn and 0 2 were thought to be optimum for gas geochemical exploration because of its portability, rapidity, low cost, simple operation and limited interference. Our experimental data can be briefly summarized that higher concentration of CO 2 , Rn and lower concentration of secondary halo in soil show blinded deposits. Our project have finished the study of thermal emanating gas in soil and rock. The methods were confirmed by known deposits and can be used in uranium exploration or environment investigation. 4 refs, 23 figs, 26 tabs

  3. Semiconductor radiation detector

    Science.gov (United States)

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  4. Semiconductor testing method

    International Nuclear Information System (INIS)

    Brown, Stephen.

    1992-01-01

    In a method of avoiding use of nuclear radiation, eg gamma rays, X-rays, electron beams, for testing semiconductor components for resistance to hard radiation, which hard radiation causes data corruption in some memory devices and 'latch-up' in others, similar fault effects can be achieved using a xenon or other 'light' flash gun even though the penetration of light is significantly less than that of gamma rays. The method involves treating a device with gamma radiation, measuring a particular fault current at the onset of a fault event, repeating the test with light to confirm the occurrence of the fault event at the same measured fault current, and using the fault current value as a reference for future tests using light on similar devices. (author)

  5. Radial semiconductor drift chambers

    International Nuclear Information System (INIS)

    Rawlings, K.J.

    1987-01-01

    The conditions under which the energy resolution of a radial semiconductor drift chamber based detector system becomes dominated by the step noise from the detector dark current have been investigated. To minimise the drift chamber dark current attention should be paid to carrier generation at Si/SiO 2 interfaces. This consideration conflicts with the desire to reduce the signal risetime: a higher drift field for shorter signal pulses requires a larger area of SiO 2 . Calculations for the single shaping and pseudo Gaussian passive filters indicate that for the same degree of signal risetime sensitivity in a system dominated by the step noise from the detector dark current, the pseudo Gaussian filter gives only a 3% improvement in signal/noise and 12% improvement in rate capability compared with the single shaper performance. (orig.)

  6. Energy distribution in semiconductors

    International Nuclear Information System (INIS)

    Ance, C.

    1979-01-01

    For various semiconductors the dispersive energy Esub(d) defined in the Wemple-Didomenico model is connected with the covalent and ionic energies Esub(h) and C. A continuous curve of ionicity against the ratio of the two energies Esub(A) and Esub(B), connected to Esub(h) and C is reported. Afromowitz's model is applied to the ternary compounds Gasub(1-x)Alsub(x)Sb using optical decomposition. From these results the average energy gap Esub(g) is given by Esub(g) = D 0 M 0 sup((IB))/(epsilon 1 (0)-1) where M 0 sup((IB)) is the interband transition contribution to the optical moment M 0 . (author)

  7. Application of gas chromatography-tandem mass spectrometry for the determination of amphetamine-type stimulants in blood and urine.

    Science.gov (United States)

    Woźniak, Mateusz Kacper; Wiergowski, Marek; Aszyk, Justyna; Kubica, Paweł; Namieśnik, Jacek; Biziuk, Marek

    2018-01-30

    Amphetamine, methamphetamine, phentermine, 3,4-methylenedioxyamphetamine (MDA), 3,4-methylenedioxymethamphetamine (MDMA), and 3,4-methylenedioxy-N-ethylamphetamine (MDEA) are the most popular amphetamine-type stimulants. The use of these substances is a serious societal problem worldwide. In this study, a method based on gas chromatography-tandem mass spectrometry (GC-MS/MS) with simple and rapid liquid-liquid extraction (LLE) and derivatization was developed and validated for the simultaneous determination of the six aforementioned amphetamine derivatives in blood and urine. The detection of all compounds was based on multiple reaction monitoring (MRM) transitions. The most important advantage of the method is the minimal sample volume (as low as 200μL) required for the extraction procedure. The validation parameters, i.e., the recovery (90.5-104%), inter-day accuracy (94.2-109.1%) and precision (0.5-5.8%), showed the repeatability and sensitivity of the method for both matrices and indicated that the proposed procedure fulfils internationally established acceptance criteria for bioanalytical methods The procedure was successfully applied to the analysis of real blood and urine samples examined in 22 forensic toxicological cases. To the best of our knowledge, this is the first work presenting the use of GC-MS/MS for the determination of amphetamine-type stimulants in blood and urine. In view of the low limits of detection (0.09-0.81ng/mL), limits of quantification (0.26-2.4ng/mL), and high selectivity, the procedure can be applied for drug monitoring in both fatal and non-fatal intoxication cases in routine toxicology analysis. Copyright © 2017 Elsevier B.V. All rights reserved.

  8. Gas separation performance of a hollow-filament type polyimide membrane module for a compact tritium removal system

    International Nuclear Information System (INIS)

    Hayashi, Takumi; Yamada, Masayuki; Suzuki, Takumi; Matsuda, Yuji; Okuno, Kenji

    1995-01-01

    A new tritium removal system using gas separation membranes has been studied to develop more compact and cost-effective system for a fusion reactor. To obtain necessary parameters, which are directly scalable to the ITER Atmospheric Detritiation System, the basic tritium recovery performance was investigated with a scaled polyimide membrane module (hollow-filament type : 10 m 3 /hr) loop. The result shows that the H 2 recovery ratio from N 2 or air was more than 99% or about 97%, respectively, at flow rate ratio of permeated/feed = 0.1, feed ampersand permeated side pressures = 2580 ampersand 80 torr, and module temp. = 293 K. Tritium (HT) recovery function was almost the same as H 2 recovery, even though the total hydrogen concentration was a few ppm in the feed of module. H 2 O recovery performance was better than hydrogen recovery. These recovery functions were improved effectively decreasing the pressure ratio of permeated/feed of module. 5 refs., 11 figs

  9. Determination of amphetamine-type stimulants in oral fluid by solid-phase microextraction and gas chromatography-mass spectrometry.

    Science.gov (United States)

    Souza, Daniele Z; Boehl, Paula O; Comiran, Eloisa; Mariotti, Kristiane C; Pechansky, Flavio; Duarte, Paulina C A V; De Boni, Raquel; Froehlich, Pedro E; Limberger, Renata P

    2011-06-24

    A method for the simultaneous identification and quantification of amphetamine (AMP), methamphetamine (MET), fenproporex (FEN), diethylpropion (DIE) and methylphenidate (MPH) in oral fluid collected with Quantisal™ device has been developed and validated. Thereunto, in-matrix propylchloroformate derivatization followed by direct immersion solid-phase microextraction and gas chromatography-mass spectrometry were employed. Deuterium labeled AMP was used as internal standard for all the stimulants and analysis was performed using the selected ion monitoring mode. The detector response was linear for the studied drugs in the concentration range of 2-256 ng mL(-1) (neat oral fluid), except for FEN, whereas the linear range was 4-256 ng mL(-1). The detection limits were 0.5 ng mL(-1) (MET), 1 ng mL(-1) (MPH) and 2 ng mL(-1) (DIE, AMP, FEN), respectively. Accuracy of quality control samples remained within 98.2-111.9% of the target concentrations, while precision has not exceeded 15% of the relative standard deviation. Recoveries with Quantisal™ device ranged from 77.2% to 112.1%. Also, the goodness-of-fit concerning the ordinary least squares model in the statistical inference of data has been tested through residual plotting and ANOVA. The validated method can be easily automated and then used for screening and confirmation of amphetamine-type stimulants in drivers' oral fluid. Copyright © 2011 Elsevier B.V. All rights reserved.

  10. Simultaneous analysis of amphetamine-type stimulants in plasma by solid-phase microextraction and gas chromatography-mass spectrometry.

    Science.gov (United States)

    Mariotti, Kristiane de Cássia; Schuh, Roselena S; Ferranti, Priscila; Ortiz, Rafael S; Souza, Daniele Z; Pechansky, Flavio; Froehlich, Pedro E; Limberger, Renata P

    2014-09-01

    Brazil is considered one of the countries with the highest number of amphetamine-type stimulant (ATS) users worldwide, mainly diethylpropion (DIE) and fenproporex (FEN). The use of ATS is mostly linked to diverted prescription stimulants and this misuse is widely associated with (ab)use by drivers. A validated method was developed for the simultaneous analysis of amphetamine (AMP), DIE and FEN in plasma samples employing direct immersion-solid-phase microextraction, and gas chromatographic/mass spectrometric analysis. Trichloroacetic acid 10% was used for plasma deproteinization. In situ derivatization with propylchloroformate was employed. The linear range of the method covered from 5.0 to 100 ng/mL. The detection limits were 1.0 (AMP), 1.5 (DIE) and 2.0 ng/mL (FEN). The accuracy assessment of the control samples was within 85.58-108.33% of the target plasma concentrations. Recoveries ranged from 46.35 to 84.46% and precision was <15% of the value of relative standard deviation. This method is appropriate for screening and confirmation in plasma forensic toxicology analyses of these basic drugs. © The Author 2014. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  11. Gas chromatography-mass spectrometric determination of traces of ether-type icing inhibitors in free-floating fuels

    Energy Technology Data Exchange (ETDEWEB)

    Shin, H.S. [Dept. of Environmental Education, Kongju National Univ., Kongju (Korea); Abuse Drug Research Center, Kongju National Univ., Kongju (Korea); Ahn, H.S. [Dept. of Environmental Science, Kongju National Univ., Kongju (Korea)

    2004-08-01

    A gas chromatographic-mass spectrometric (GC-MS) assay method has been developed for simultaneous determination of ethylene glycol monomethyl ether (EGME) and diethylene glycol monomethly ether (DEGME) in spilled aviation fuels. Ethylene glycol monobutyl ether (EGBE) and ethylene glycol monoethyl ether (EGEE) were used as internal standard and surrogate, respectively. Sample preparation consisted of back-extraction with 7 mL dichloromethane after extraction of 50 mL of fuel with 2 mL of water. The extract was concentrated to dryness, dissolved in 100 {mu}L methanol, and analyzed by GC-MS with selected-ion monitoring (SIM). The peaks had good chromatographic properties on a semi-polar column. EGME and DEGME were extracted from fuel with high recovery of 75 and 85%, with small variations, respectively. Method detection limits were 1.3 and 1.0 ng mL{sup -1} for EGME and DEGME, respectively, in spilled fuel. DEGME was detected at concentrations of 22.6 and 19.7 ng mL{sup -1} in two samples from among five free-floating samples collected in a tunnel of a subway station located in the vicinity of an army base in Korea. The method might be useful for differentiation between the fuel-types kerosene and JP-8, which might originate from a storage tank. (orig.)

  12. Determination of breath isoprene and acetone concentration with a needle-type extraction device in gas chromatography-mass spectrometry.

    Science.gov (United States)

    Ueta, Ikuo; Mizuguchi, Ayako; Okamoto, Mitsuyoshi; Sakamaki, Hiroyuki; Hosoe, Masahiko; Ishiguro, Motoyuki; Saito, Yoshihiro

    2014-03-20

    Isoprene in human breath is said to be related to cholesterol metabolism, and the possibility of the correlations with some clinical parameters has been studied. However, at this stage, no clear benefit of breath isoprene has been reported for clinical diagnosis. In this work, isoprene and acetone concentrations were measured in the breath of healthy and obese subjects using a needle-type extraction device for subsequent analysis in gas chromatography-mass spectrometry (GC-MS) to investigate the possibility of these compounds as an indicator of possible diseases. After measuring intraday and interday variations of isoprene and acetone concentrations in breath samples of healthy subjects, their concentrations were also determined in 80 healthy and 17 obese subjects. In addition, correlation between these breath concentrations and the blood tests result was studied for these healthy and obese subjects. The results indicated successful determination of breath isoprene and acetone in this work, however, no clear correlation was observed between these measured values and the blood test results. Breath isoprene concentration may not be a useful indicator for obesity or hypercholesterolemia. Copyright © 2014 Elsevier B.V. All rights reserved.

  13. Fine 3D neutronic characterization of a gas-cooled fast reactor based on plate-type sub-assemblies

    International Nuclear Information System (INIS)

    Bosq, J. C.; Peneliau, Y.; Rimpault, G.; Vanier, M.

    2006-01-01

    CEA neutronic studies have allowed the definition of a first 2400 MWth reference gas-cooled fast reactor core using plate-type sub-assemblies, for which the main neutronic characteristics were calculated by the so-called ERANOS 'design calculation scheme' relying on several method approximations. The last stage has consisted in a new refine characterization, using the reference calculation scheme, in order to confirm the impact of the approximations of the design route. A first core lay-out taking into account control rods was proposed and the reactivity penalty due to the control rod introduction in this hexagonal core lay-out was quantified. A new adjusted core was defined with an increase of the plutonium content. This leads to a significant decrease of the breeding gain which needs to be recovered in future design evolutions in order to achieve the self breeding goal. Finally, the safety criteria associated to the control rods were calculated with a first estimation of the uncertainties. All these criteria are respected, even if the safety analysis of GFR concepts and the determination of these uncertainties should be further studied and improved. (authors)

  14. Positional Arrangements of Waste Exhaust Gas Ducts of C-Type Balanced Chimney Heating Devices on Building Façades

    Directory of Open Access Journals (Sweden)

    Erkan AVLAR

    2009-01-01

    Full Text Available In Turkey today, with the increase in availability of natural gas,detached heating devices are being preferred over existingheating devices. Due to the lack of chimneys in existing buildingsin Turkey or the presence of chimneys that fail to conformto standards, the use of C-type balanced chimney devices has increased.C-type balanced chimney devices take the combustionair directly from the outside by a specific air duct as detachedheating equipment, with enclosed combustion chambers anda specific waste gas exhaust duct, and they are ventilated independentlyof the field of equipment. Because of their essentiality,the use of a chimney is not required in these devices;the waste gas is exhausted through walls, windows, doors, orbalconies. The natural gas is a clean fossil fuel that requires nostorage in buildings and is easy to use. However, water vapor,carbon dioxide and nitrogen oxides are produced by the combustionof natural gas. It is widely known that high concentrationsof these products can have some adverse effects onhumans such as dizziness, headaches and nausea. As a result,the waste products could recoil through wall openings on thefaçade to create unhealthy indoor environments that could bedangerous to human health. Therefore, the importance of standardsand regulations about the positional arrangements of thewaste gas exhaust ducts of C-type balanced chimney devices onbuilding façades is increasing. In this research, we analyze thestudies of the Institution of Turkish Standards, Chamber of MechanicalEngineers, gas distribution companies, municipalitiesand authorized firms and compare the criteria to determine thenecessary application method. According to our comparison ofthe references accessed, the criteria are not uniform.

  15. Dependence of charge collection distributions and dose on the gas type filling the ionization chamber for a p(66)Be(49) clinical neutron beam

    International Nuclear Information System (INIS)

    Awschalom, M.; Haken, R.K.T.

    1985-01-01

    Measurements of central axis depth charge distributions (CADCD) in a p(66)Be(49) clinical neutron beam using A-150 TE plastic ionization chambers (IC) have shown that these distributions are dependent on the gas type filling the ICs. IC volumes from 0.1 to 8 cm 3 and nine different gases were investigated. Off axis ratios and build-up measurements do not seem to be as sensitive to gas type. The gas dosimetry constants given in the AAPM Protocol for Neutron Beam Dosimetry for air and methane based TE gases were tested for consistency in water and in TE solution filled phantoms at depths of 10 cm, when used in conjunction with an IC having 5 mm thick walls of A-150. 29 refs., 7 figs., 1 tab

  16. Assessment of undiscovered continuous oil and gas resources in the Domanik-type formations of the Volga-Ural Region Province, Russia, 2017

    Science.gov (United States)

    Klett, Timothy R.; Brownfield, Michael E.; Finn, Thomas M.; Gaswirth, Stephanie B.; Le, Phuong A.; Leathers-Miller, Heidi M.; Marra, Kristen R.; Mercier, Tracey J.; Pitman, Janet K.; Schenk, Christopher J.; Tennyson, Marilyn E.; Woodall, Cheryl A.

    2018-02-27

    Using a geology-based assessment methodology, the U.S. Geological Survey estimated mean undiscovered, technically recoverable continuous resources of 2.8 billion barrels of oil and 34 trillion cubic feet of gas in the Domanik-type formations of the Volga-Ural Region Province, Russia.

  17. Effects of variation of oil and zinc oxide type on the gas barrier and mechanical properties of chlorobutyl rubber/epoxidised natural rubber blends

    International Nuclear Information System (INIS)

    Li, Lin; Zhang, Jin; Jo, Jae Ok; Datta, Sanjoy; Kim, Jin Kuk

    2013-01-01

    Highlights: ► A (90:10) blend of CIIR and ENR by weight was used as the base. ► Different process oil and ZnO were used to optimize the gas barrier property. ► The minimum oxygen permeability is obtained using sheet ZnO. - Abstract: In many polymer applications such as inner tire liners and fuel hoses, imparting excellent gas barrier property is of prime importance. Researches in this direction had been done based on a judicious choice of polymer type or a blend thereof and the compounding ingredients. Though butyl rubber has been the polymer of choice because of its excellent gas barrier property, yet researches were targeted to improve the same with further modification in the polymer type and variation in compounding ingredients. In this study, a (90:10) blend of chlorobutyl rubber (CIIR) and Epoxdised Natural Rubber (ENR) by weight was used as the base. Four different types of process oil and three different types of zinc oxide (ZnO) at fixed predetermined concentrations were used to optimize the gas barrier and mechanical properties. In this blend, recycled aromatic oil (RAE) and sheet zinc oxide were effective in imparting the best overall combination of properties. Scanning Electron Microscopic (SEM) studies of ZnO were done to understand the structure property relationship

  18. Magnetic excitations in ferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

    2009-01-01

    Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

  19. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  20. GaN/NbN epitaxial semiconductor/superconductor heterostructures

    Science.gov (United States)

    Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

    2018-03-01

    Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

  1. Calculation of the internal electric field within doped semiconductors

    International Nuclear Information System (INIS)

    Phelps, G J

    2012-01-01

    A detailed model for the calculation of the internal potential and electric field profile within doped semiconductors is developed from a first-principles approach and presented in this paper. The model utilizes Poisson's equation and basic Boltzmann statistics to develop a standard nonlinear Poisson–Boltzmann equation (NPBE) for doped semiconductors. The resultant NPBE links the internal electrostatic potential within the doped semiconductor to the doping concentration profile of the semiconductor device under consideration. The NPBE is solved by the application of numerical methods, is general in formulation, supporting multiple simultaneous dopant configurations, and may be applied to any semiconductor type. Calculated results of the electric field profile for various semiconductor dopant structures derived using the model are additionally presented in this paper. The electric field results predicted by the model are shown to be in excellent agreement with those found by other methods. The model may be expanded to accommodate effects involving internal substrate electron–hole pair generation (gemination) caused by photo-ionization for application to and the modeling of solar cell device structures. (paper)

  2. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1990-01-01

    The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

  3. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

  4. Semiconductor device comprising a pn-heterojunction

    NARCIS (Netherlands)

    2007-01-01

    An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

  5. Magnetoresistive properties of non-uniform state of antiferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Krivoruchko, V.N.

    1996-01-01

    The phenomenological model of magnetoresistive properties of magneto-non-single-phase state of alloyed magnetic semiconductors is considered using the concept derived for a description of magnetoresistive effects in layered and granular magnetic metals. By assuming that there exists a magneto-non-single state in the manganites having the perovskite structure, it is possible to describe, in the framework of above approach, large magnetoresistive effects of manganite phases with antiferromagnetic order and semiconductor-type conductivity as well as those with antiferromagnetic properties and metallic-type conductivity

  6. Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

    NARCIS (Netherlands)

    2008-01-01

    The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

  7. Hazardous air pollutant emissions from gas-fired combustion sources: emissions and the effects of design and fuel type

    Energy Technology Data Exchange (ETDEWEB)

    England, G.C.; McGrath, T.P. [GE-Energy and Environmental Research Corp., Irvine, CA (United States); Gilmer, L. [Equilon Enterprises, Bellaire, TX (United States); Seebold, J.G. [Chevron Research and Technology Co., Richmond, CA (United States); Lev-On, M. [ARCO, Los Angeles, CA (United States); Hunt, T. [American Petroleum Institute, Washington, DC (United States)

    2001-07-01

    Air emissions from gas-fired combustion devices such as boilers, process heaters, gas turbines and stationary reciprocating engines contain hazardous air pollutants (HAPs) subjected to consideration under the federal clean air act (CAA). This work presents a recently completed major research project to develop an understanding of HAP emissions from gas-fired boilers and process heaters and new HAP emission factors based on field emission tests of gas-fired external combustion devices used in the petroleum industry. The effect of combustion system design and operating parameters on HAP emissions determined by both field and research tests are discussed. Data from field tests of gas-fired petroleum industry boilers and heaters generally show very low emission levels of organic HAPs. A comparison of the emission data for boilers and process heaters, including units with and without various forms of NO{sub x} emission controls, showed no significant difference in organic HAP emission characteristics due to process or burner design. This conclusion is also supported by the results of research tests with different burner designs. Based on field tests of units fired with natural gas and various petroleum industry process gases and research tests in which gas composition was intentionally varied, organic HAP emissions were not determined to be significantly affected by the gas composition. Research data indicate that elevated organic HAP emission levels are found only under extreme operating conditions (starved air or high excess air combustion) associated with poor combustion. (author)

  8. Effects of syngas type on the operation and performance of a gas turbine in integrated gasification combined cycle

    International Nuclear Information System (INIS)

    Kim, Young Sik; Lee, Jong Jun; Kim, Tong Seop; Sohn, Jeong L.

    2011-01-01

    Research highlights: → The effect of firing syngas in a gas turbine designed for natural gas was investigated. → A full off-design analysis was performed for a wide syngas heating value range. → Restrictions on compressor surge margin and turbine metal temperature were considered. -- Abstract: We investigated the effects of firing syngas in a gas turbine designed for natural gas. Four different syngases were evaluated as fuels for a gas turbine in the integrated gasification combined cycle (IGCC). A full off-design analysis of the gas turbine was performed. Without any restrictions on gas turbine operation, as the heating value of the syngas decreases, a greater net system power output and efficiency is possible due to the increased turbine mass flow. However, the gas turbine is more vulnerable to compressor surge and the blade metal becomes more overheated. These two problems can be mitigated by reductions in two parameters: the firing temperature and the nitrogen flow to the combustor. With the restrictions on surge margin and metal temperature, the net system performance decreases compared to the cases without restrictions, especially in the surge margin control range. The net power outputs of all syngas cases converge to a similar level as the degree of integration approaches zero. The difference in net power output between unrestricted and restricted operation increases as the fuel heating value decreases. The optimal integration degree, which shows the greatest net system power output and efficiency, increases with decreasing syngas heating value.

  9. Effects of syngas type on the operation and performance of a gas turbine in integrated gasification combined cycle

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Young Sik; Lee, Jong Jun [Graduate School, Inha University, Incheon 402-751 (Korea, Republic of); Kim, Tong Seop, E-mail: kts@inha.ac.k [Dept. of Mechanical Engineering, Inha University, Incheon 402-751 (Korea, Republic of); Sohn, Jeong L. [Center for Next Generation Heat Exchangers, Busan 618-230 (Korea, Republic of)

    2011-05-15

    Research highlights: {yields} The effect of firing syngas in a gas turbine designed for natural gas was investigated. {yields} A full off-design analysis was performed for a wide syngas heating value range. {yields} Restrictions on compressor surge margin and turbine metal temperature were considered. -- Abstract: We investigated the effects of firing syngas in a gas turbine designed for natural gas. Four different syngases were evaluated as fuels for a gas turbine in the integrated gasification combined cycle (IGCC). A full off-design analysis of the gas turbine was performed. Without any restrictions on gas turbine operation, as the heating value of the syngas decreases, a greater net system power output and efficiency is possible due to the increased turbine mass flow. However, the gas turbine is more vulnerable to compressor surge and the blade metal becomes more overheated. These two problems can be mitigated by reductions in two parameters: the firing temperature and the nitrogen flow to the combustor. With the restrictions on surge margin and metal temperature, the net system performance decreases compared to the cases without restrictions, especially in the surge margin control range. The net power outputs of all syngas cases converge to a similar level as the degree of integration approaches zero. The difference in net power output between unrestricted and restricted operation increases as the fuel heating value decreases. The optimal integration degree, which shows the greatest net system power output and efficiency, increases with decreasing syngas heating value.

  10. Hazardous air pollutant emissions from gas-fired combustion sources: emissions and the effects of design and fuel type

    International Nuclear Information System (INIS)

    England, G.C.; McGrath, T.P.; Gilmer, L.; Seebold, J.G.; Lev-On, M.; Hunt, T.

    2001-01-01

    Air emissions from gas-fired combustion devices such as boilers, process heaters, gas turbines and stationary reciprocating engines contain hazardous air pollutants (HAPs) subjected to consideration under the federal clean air act (CAA). This work presents a recently completed major research project to develop an understanding of HAP emissions from gas-fired boilers and process heaters and new HAP emission factors based on field emission tests of gas-fired external combustion devices used in the petroleum industry. The effect of combustion system design and operating parameters on HAP emissions determined by both field and research tests are discussed. Data from field tests of gas-fired petroleum industry boilers and heaters generally show very low emission levels of organic HAPs. A comparison of the emission data for boilers and process heaters, including units with and without various forms of NO x emission controls, showed no significant difference in organic HAP emission characteristics due to process or burner design. This conclusion is also supported by the results of research tests with different burner designs. Based on field tests of units fired with natural gas and various petroleum industry process gases and research tests in which gas composition was intentionally varied, organic HAP emissions were not determined to be significantly affected by the gas composition. Research data indicate that elevated organic HAP emission levels are found only under extreme operating conditions (starved air or high excess air combustion) associated with poor combustion. (author)

  11. Selective, electrochemical etching of a semiconductor

    Science.gov (United States)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  12. Effects of gas temperature in the plasma layer on RONS generation in array-type dielectric barrier discharge at atmospheric pressure

    Science.gov (United States)

    Yoon, Sung-Young; Yi, Changho; Eom, Sangheum; Park, Seungil; Kim, Seong Bong; Ryu, Seungmin; Yoo, Suk Jae

    2017-12-01

    In this work, we studied the control of plasma-produced species under a fixed gas composition (i.e., ambient air) in a 10 kHz-driven array-type dielectric barrier atmospheric-pressure plasma discharge. Instead of the gas composition, only the gas velocity was controlled. Thus, the plasma-maintenance cost was considerably lower than methods such as external N2 or O2 injection. The plasma-produced species were monitored using Fourier transformed infrared spectroscopy. The discharge properties were measured using a voltage probe, current probe, infrared camera, and optical emission spectroscopy. The results showed that the major plasma products largely depend on the gas temperature in the plasma discharge layer. The gas temperature in the plasma discharge layer was significantly different to the temperature of the ceramic adjacent to the plasma discharge layer, even in the small discharge power density of ˜15 W/cm2 or ˜100 W/cm3. Because the vibrational excitation of N2 was suppressed by the higher gas flow, the major plasma-produced species shifted from NOx in low flow to O3 in high flow.

  13. Hydrogen gas production is associated with reduced interleukin-1β mRNA in peripheral blood after a single dose of acarbose in Japanese type 2 diabetic patients.

    Science.gov (United States)

    Tamasawa, Atsuko; Mochizuki, Kazuki; Hariya, Natsuyo; Saito, Miyoko; Ishida, Hidenori; Doguchi, Satako; Yanagiya, Syoko; Osonoi, Takeshi

    2015-09-05

    Acarbose, an α-glucosidase inhibitor, leads to the production of hydrogen gas, which reduces oxidative stress. In this study, we examined the effects of a single dose of acarbose immediately before a test meal on postprandial hydrogen gas in breath and peripheral blood interleukin (IL)-1β mRNA expression in Japanese type 2 diabetic patients. Sixteen Japanese patients (14 men, 2 women) participated in this study. The mean±standard deviation age, hemoglobin A1c and body mass index were 52.1±15.4 years, 10.2±2.0%, and 27.7±8.0kg/m(2), respectively. The patients were admitted into our hospital for 2 days and underwent test meals at breakfast without (day 1) or with acarbose (day 2). We performed continuous glucose monitoring and measured hydrogen gas levels in breath, and peripheral blood IL-1β mRNA levels before (0min) and after the test meal (hydrogen gas: 60, 120, 180, and 300min; IL-1β: 180min). The induction of hydrogen gas production and the reduction in peripheral blood IL-1β mRNA after the test meal were not significant between days 1 (without acarbose) and 2 (with acarbose). However, the changes in total hydrogen gas production from day 1 to day 2 were closely and inversely associated with the changes in peripheral blood IL-1β mRNA levels. Our results suggest that an increase in hydrogen gas production is inversely associated with a reduction of the peripheral blood IL-1β mRNA level after a single dose of acarbose in Japanese type 2 diabetic patients. Copyright © 2015 Elsevier B.V. All rights reserved.

  14. Fatty Acid and Carbon Isotopic Evidence for type I Methanotrophs in Microbial Mats from a Shallow Marine Gas Seep, Coal Oil Point, CA.

    Science.gov (United States)

    Ding, H.; Valentine, D.

    2005-12-01

    To study the microbial community in a Southern California seep field, sediment and bacterial mat samples were collected from natural gas-bearing and gas-free surfaces at two distinct seeps in the Coal Oil Point seep field, offshore Santa Barbara. Fatty acids in these samples were extracted, analyzed and identified. Using gas chromatography (GC), more than 30 different fatty acids were separated. Generally, fatty acid concentrations in natural gas-bearing samples were about 5-fold higher compared to gas-free samples. Using gas chromatography mass sepctrometry (GC-MS), all separated fatty acids were identified in each sample. The major constituents included saturated 14:0, 16:0, 18:0, branched i-15, a-15 and unsaturated 16:1 and 18:1 series fatty acids. GC-IRMS (isotope ratio mass spectrometry) analysis provided the 13C of all major fatty acids and some 16:1 series fatty acids were found to be more depleted than -40% in samples associated with gas seepage. After treatment with dimethyl disufide (DMDS), the 16:1 series fatty acids were resolved into five distinct components, including common composition 16:1(7), bacterial specific i-16:1(7) and typical biomarkers of type I methnotrophs 16:1(8), 16(6) and 16:1(5), suggesting an important role for methnotrophs in seep sediments and microbial mats. These results provide evidence for the activity of type I methanotrophic bacteria in microbial mats and surficial sediments at the Coal Oil Point seep field, and have implications for methane cycling in this and other seep

  15. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  16. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  17. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  18. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  19. Semiconductor technology program. Progress briefs

    Science.gov (United States)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  20. Semiconductor radiation detectors. Device physics

    International Nuclear Information System (INIS)

    Lutz, G.

    2007-01-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)