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Sample records for type semiconductor gas

  1. Various types of semiconductor photocatalysts modified by CdTe QDs and Pt NPs for toluene photooxidation in the gas phase under visible light

    Energy Technology Data Exchange (ETDEWEB)

    Marchelek, M. [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland); Grabowska, E., E-mail: ewelina.grabowska@ug.edu.pl [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland); Klimczuk, T. [Department of Solid State Physics, Faculty of Applied Physics and Mathematics, Gdansk University of Technology, G. Narutowicza 11/12, 80-233 Gdansk (Poland); Lisowski, W. [Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44-52, 01-224 Warsaw (Poland); Zaleska-Medynska, A. [Department of Environmental Technology, Faculty of Chemistry, University of Gdansk Wita Stwosza 63, 80-952 Gdansk (Poland)

    2017-01-30

    Highlights: • Novel semiconductors decorated by CdTe QDs and/or Pt NPs were synthesized. • Photodeposition and radiolysis is an effective method to obtaining Pt NPs. • CdTe decorated samples were prepared by absorption of QDs on matrix surface. • KTaO{sub 3}/CdTe-Pt{sub (R)} showed highest photocatalytic performance. • The enhanced performance was associated with electron trap mechanism. - Abstract: A novel synthesis process was used to prepare TiO{sub 2} microspheres, TiO{sub 2} P-25, SrTiO{sub 3} and KTaO{sub 3} decorated by CdTe QDs and/or Pt NPs. The effect of semiconductor matrix, presence of CdTe QDs and/or Pt NPs on the semiconductor surface as well as deposition technique of Pt NPs (photodeposition or radiolysis) on the photocatalytic activity were investigated. The as-prepared samples were characterized by X-ray powder diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) with energy-dispersive X-ray (EDX) spectroscopy, scanning electron microscopy (SEM), photoluminescence spectrometry (PL), Fourier transform infrared (FT-IR) and Raman spectra, diffuse reflectance spectroscopy (DRS) and BET surface area analysis. The photocatalytic decomposition of toluene in gas phase, activated by light-emitting diodes (LEDs), with the CdTe/Pt nanoparticles-modified TiO{sub 2} microspheres, P25, SrTiO{sub 3} and KTaO{sub 3} semiconductors was investigated under UV–vis and visible irradiation.The results showed that the photoactivity depends on semiconductor matrix. The highest photoactivity under Vis light was observed for KTaO{sub 3}/CdTe-Pt{sub (R)} sample (56% of toluene was decompose after 30 min of irradiation). The efficiency of the most active sample was 3 times higher than result for P25 and two times higher than for unmodified KTaO{sub 3}.

  2. Method to induce a conductivity type in a semiconductor

    International Nuclear Information System (INIS)

    Aboaf, J.A.; Sedgwick, T.O.

    1977-01-01

    The invention deals with a method in which one can produce a region of a desired type of conductivity in a semiconductor as is required for, e.g., field effect transistors. A metal oxide layer combination consisting of several metal oxides is thus deposited on the semiconductor. This is carried out according to the invention in a non-oxidizing atmosphere at temperatures at which the metal oxides do not diffuse into the semiconductor. The sign and degree of the induced conductivity type is adjusted by dosed depositing of the individual metal oxides related to one another. The gaseous metal oxides due to heating, mixed with a non-oxidizing gas are added in compounds to the semiconductor heated to depositing temperature. These compounds decompose at the depositing temperature into the metal oxide and a gaseous residual component. The semiconductor consists of silicon, and nitrogen is used as carrier gas; when depositing aluminium oxide, gaseous aluminium isopropoxide is added; when depositing silicon dioxide, gaseous tetra-ethyl orthosilicate. (ORU) [de

  3. Development and characterization of semiconductor gas discharge microstructure

    International Nuclear Information System (INIS)

    Yucel Kurt, H.; Kurt, E.; Salamov, B.G.; Salamov, B.G.

    2009-01-01

    In a semiconductor gas discharge structure with diameters much larger than an inter-electrode distance, the effects of different parameters (electrodes separation, gas pressure, diameter and conductivity of the GaAs photodetector) on electrical breakdown and current oscillations of the current have been studied. Instabilities of spatially non-uniform distributions resulting in the formation of multiple current filaments with increasing voltages above the critical values have been observed. (author)

  4. Inhomogeneous Oxygen Vacancy Distribution in Semiconductor Gas Sensors: Formation, Migration and Determination on Gas Sensing Characteristics

    OpenAIRE

    Liu, Jianqiao; Gao, Yinglin; Wu, Xu; Jin, Guohua; Zhai, Zhaoxia; Liu, Huan

    2017-01-01

    The density of oxygen vacancies in semiconductor gas sensors was often assumed to be identical throughout the grain in the numerical discussion of the gas-sensing mechanism of the devices. In contrast, the actual devices had grains with inhomogeneous distribution of oxygen vacancy under non-ideal conditions. This conflict between reality and discussion drove us to study the formation and migration of the oxygen defects in semiconductor grains. A model of the gradient-distributed oxygen vacanc...

  5. Hydrogen Gas Sensors Based on Semiconductor Oxide Nanostructures

    Directory of Open Access Journals (Sweden)

    Yongming Hu

    2012-04-01

    Full Text Available Recently, the hydrogen gas sensing properties of semiconductor oxide (SMO nanostructures have been widely investigated. In this article, we provide a comprehensive review of the research progress in the last five years concerning hydrogen gas sensors based on SMO thin film and one-dimensional (1D nanostructures. The hydrogen sensing mechanism of SMO nanostructures and some critical issues are discussed. Doping, noble metal-decoration, heterojunctions and size reduction have been investigated and proved to be effective methods for improving the sensing performance of SMO thin films and 1D nanostructures. The effect on the hydrogen response of SMO thin films and 1D nanostructures of grain boundary and crystal orientation, as well as the sensor architecture, including electrode size and nanojunctions have also been studied. Finally, we also discuss some challenges for the future applications of SMO nanostructured hydrogen sensors.

  6. Multinary wurtzite-type oxide semiconductors: present status and perspectives

    Science.gov (United States)

    Suzuki, Issei; Omata, Takahisa

    2017-01-01

    Oxide-based optoelectronic devices have been limited in applicable wavelength to the near-UV region because there are few viable binary wurtzite-type oxides, but ternary wurtzite-type (β-NaFeO2-type) oxides are promising materials to expand the applicable wavelengths of these devices. In the past decade, many attractive properties of β-NaFeO2-type oxide semiconductors have been revealed, such as the band-engineering of ZnO by alloying with β-LiGaO2 and β-AgGaO2, the photocatalytic activities of β-AgGaO2 and β-AgAlO2, and the discovery that β-CuGaO2 is suitable for thin-film solar-cell absorbers. In this review article, we consider previous studies of β-NaFeO2-type oxide semiconductors—β-LiGaO2, β-AgGaO2, β-AgAlO2, β-CuGaO2—and their alloys with ZnO, and discuss their structural features, optical and electrical properties, and the relationship between their crystal structures and electronic band structures. We describe the outlook of β-NaFeO2-type oxide semiconductors and the remaining issues that hinder the development of optoelectronic devices made from β-NaFeO2-type oxide semiconductors.

  7. Gas-phase synthesis of semiconductor nanocrystals and its applications

    Science.gov (United States)

    Mandal, Rajib

    Luminescent nanomaterials is a newly emerging field that provides challenges not only to fundamental research but also to innovative technology in several areas such as electronics, photonics, nanotechnology, display, lighting, biomedical engineering and environmental control. These nanomaterials come in various forms, shapes and comprises of semiconductors, metals, oxides, and inorganic and organic polymers. Most importantly, these luminescent nanomaterials can have different properties owing to their size as compared to their bulk counterparts. Here we describe the use of plasmas in synthesis, modification, and deposition of semiconductor nanomaterials for luminescence applications. Nanocrystalline silicon is widely known as an efficient and tunable optical emitter and is attracting great interest for applications in several areas. To date, however, luminescent silicon nanocrystals (NCs) have been used exclusively in traditional rigid devices. For the field to advance towards new and versatile applications for nanocrystal-based devices, there is a need to investigate whether these NCs can be used in flexible and stretchable devices. We show how the optical and structural/morphological properties of plasma-synthesized silicon nanocrystals (Si NCs) change when they are deposited on stretchable substrates made of polydimethylsiloxane (PDMS). Synthesis of these NCs was performed in a nonthermal, low-pressure gas phase plasma reactor. To our knowledge, this is the first demonstration of direct deposition of NCs onto stretchable substrates. Additionally, in order to prevent oxidation and enhance the luminescence properties, a silicon nitride shell was grown around Si NCs. We have demonstrated surface nitridation of Si NCs in a single step process using non?thermal plasma in several schemes including a novel dual-plasma synthesis/shell growth process. These coated NCs exhibit SiNx shells with composition depending on process parameters. While measurements including

  8. Inhomogeneous Oxygen Vacancy Distribution in Semiconductor Gas Sensors: Formation, Migration and Determination on Gas Sensing Characteristics.

    Science.gov (United States)

    Liu, Jianqiao; Gao, Yinglin; Wu, Xu; Jin, Guohua; Zhai, Zhaoxia; Liu, Huan

    2017-08-10

    The density of oxygen vacancies in semiconductor gas sensors was often assumed to be identical throughout the grain in the numerical discussion of the gas-sensing mechanism of the devices. In contrast, the actual devices had grains with inhomogeneous distribution of oxygen vacancy under non-ideal conditions. This conflict between reality and discussion drove us to study the formation and migration of the oxygen defects in semiconductor grains. A model of the gradient-distributed oxygen vacancy was proposed based on the effects of cooling rate and re-annealing on semiconductive thin films. The model established the diffusion equations of oxygen vacancy according to the defect kinetics of diffusion and exclusion. We described that the steady-state and transient-state oxygen vacancy distributions, which were used to calculate the gas-sensing characteristics of the sensor resistance and response to reducing gases under two different conditions. The gradient-distributed oxygen vacancy model had the applications in simulating the sensor performances, such as the power law, the grain size effect and the effect of depletion layer width.

  9. Inhomogeneous Oxygen Vacancy Distribution in Semiconductor Gas Sensors: Formation, Migration and Determination on Gas Sensing Characteristics

    Directory of Open Access Journals (Sweden)

    Jianqiao Liu

    2017-08-01

    Full Text Available The density of oxygen vacancies in semiconductor gas sensors was often assumed to be identical throughout the grain in the numerical discussion of the gas-sensing mechanism of the devices. In contrast, the actual devices had grains with inhomogeneous distribution of oxygen vacancy under non-ideal conditions. This conflict between reality and discussion drove us to study the formation and migration of the oxygen defects in semiconductor grains. A model of the gradient-distributed oxygen vacancy was proposed based on the effects of cooling rate and re-annealing on semiconductive thin films. The model established the diffusion equations of oxygen vacancy according to the defect kinetics of diffusion and exclusion. We described that the steady-state and transient-state oxygen vacancy distributions, which were used to calculate the gas-sensing characteristics of the sensor resistance and response to reducing gases under two different conditions. The gradient-distributed oxygen vacancy model had the applications in simulating the sensor performances, such as the power law, the grain size effect and the effect of depletion layer width.

  10. Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors.

    Science.gov (United States)

    Maier, Konrad; Helwig, Andreas; Müller, Gerhard; Hille, Pascal; Eickhoff, Martin

    2015-09-23

    In this work the low temperature response of metal oxide semiconductor gas sensors is analyzed. Important characteristics of this low-temperature response are a pronounced selectivity to acid- and base-forming gases and a large disparity of response and recovery time constants which often leads to an integrator-type of gas response. We show that this kind of sensor performance is related to the trend of semiconductor gas sensors to adsorb water vapor in multi-layer form and that this ability is sensitively influenced by the surface morphology. In particular we show that surface roughness in the nanometer range enhances desorption of water from multi-layer adsorbates, enabling them to respond more swiftly to changes in the ambient humidity. Further experiments reveal that reactive gases, such as NO₂ and NH₃, which are easily absorbed in the water adsorbate layers, are more easily exchanged across the liquid/air interface when the humidity in the ambient air is high.

  11. P-type Oxide Semiconductors for Transparent & Energy Efficient Electronics

    KAUST Repository

    Wang, Zhenwei

    2018-03-11

    Emerging transparent semiconducting oxide (TSO) materials have achieved their initial commercial success in the display industry. Due to the advanced electrical performance, TSOs have been adopted either to improve the performance of traditional displays or to demonstrate the novel transparent and flexible displays. However, due to the lack of feasible p-type TSOs, the applications of TSOs is limited to unipolar (n-type TSOs) based devices. Compared with the prosperous n-type TSOs, the performance of p-type counterparts is lag behind. However, after years of discovery, several p-type TSOs are confirmed with promising performance, for example, tin monoxide (SnO). By using p-type SnO, excellent transistor field-effect mobility of 6.7 cm2 V-1 s-1 has been achieved. Motivated by this encouraging performance, this dissertation is devoted to further evaluate the feasibility of integrating p-type SnO in p-n junctions and complementary metal oxide semiconductor (CMOS) devices. CMOS inverters are fabricated using p-type SnO and in-situ formed n-type tin dioxide (SnO2). The semiconductors are simultaneously sputtered, which simplifies the process of CMOS inverters. The in-situ formation of SnO2 phase is achieved by selectively sputtering additional capping layer, which serves as oxygen source and helps to balance the process temperature for both types of semiconductors. Oxides based p-n junctions are demonstrated between p-type SnO and n-type SnO2 by magnetron sputtering method. Diode operating ideality factor of 3.4 and rectification ratio of 103 are achieved. A large temperature induced knee voltage shift of 20 mV oC-1 is observed, and explained by the large band gap and shallow states in SnO, which allows minor adjustment of band structure in response to the temperature change. Finally, p-type SnO is used to demonstrating the hybrid van der Waals heterojunctions (vdWHs) with two-dimensional molybdenum disulfide (2D MoS2) by mechanical exfoliation. The hybrid vdWHs show

  12. Excitonic optical bistability in n-type doped semiconductors

    International Nuclear Information System (INIS)

    Nguyen Ba An; Le Thi Cat Tuong

    1991-07-01

    A resonant monochromatic pump laser generates coherent excitons in an n-type doped semiconductor. Both exciton-exciton and exciton-donor interactions come into play. The former interaction can give rise to the appearance of optical bistability which is heavily influenced by the latter one. When optical bistability occurs at a fixed laser frequency both its holding intensity and hysteresis loop size are shown to decrease with increasing donor concentration. Two possibilities are suggested for experimentally determining one of the two parameters of the system - the exciton-donor coupling constant and the donor concentration, if the other parameter is known beforehand. (author). 36 refs, 2 figs

  13. Semiconductor Gas Sensors Based on Pd/SnO2 Nanomaterials for Methane Detection in Air

    Science.gov (United States)

    Fedorenko, George; Oleksenko, Ludmila; Maksymovych, Nelly; Skolyar, Galina; Ripko, Oleksandr

    2017-05-01

    Semiconductor sensors based on nanosized Pd-containing tin dioxide have been obtained by a sol-gel technique. Semiconductor gas-sensitive materials were characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD) methods. Influence of Pd additives on sensitivity of the sensors to methane has been studied. Temperature dependences of electrical resistance in air and sensor response to methane on palladium content for the sensors based on nanosized materials Pd/SnO2 have been investigated.

  14. New semiconductor laser technology for gas sensing applications in the 1650nm range

    Science.gov (United States)

    Morrison, Gordon B.; Sherman, Jes; Estrella, Steven; Moreira, Renan L.; Leisher, Paul O.; Mashanovitch, Milan L.; Stephen, Mark; Numata, Kenji; Wu, Stewart; Riris, Haris

    2017-08-01

    Atmospheric methane (CH4) is the second most important anthropogenic greenhouse gas with approximately 25 times the radiative forcing of carbon dioxide (CO2) per molecule. CH4 also contributes to pollution in the lower atmosphere through chemical reactions leading to ozone production. Recent developments of LIDAR measurement technology for CH4 have been previously reported by Goddard Space Flight Center (GSFC). In this paper, we report on a novel, high-performance tunable semiconductor laser technology developed by Freedom Photonics for the 1650nm wavelength range operation, and for LIDAR detection of CH4. Devices described are monolithic, with simple control, and compatible with low-cost fabrication techniques. We present 3 different types of tunable lasers implemented for this application.

  15. Gas-Solid Reaction Properties of Fluorine Compounds and Solid Adsorbents for Off-Gas Treatment from Semiconductor Facility

    Directory of Open Access Journals (Sweden)

    Shinji Yasui

    2012-01-01

    Full Text Available We have been developing a new dry-type off-gas treatment system for recycling fluorine from perfluoro compounds present in off-gases from the semiconductor industry. The feature of this system is to adsorb the fluorine compounds in the exhaust gases from the decomposition furnace by using two types of solid adsorbents: the calcium carbonate in the upper layer adsorbs HF and converts it to CaF2, and the sodium bicarbonate in the lower layer adsorbs HF and SiF4 and converts them to Na2SiF6. This paper describes the fluorine compound adsorption properties of both the solid adsorbents—calcium carbonate and the sodium compound—for the optimal design of the fixation furnace. An analysis of the gas-solid reaction rate was performed from the experimental results of the breakthrough curve by using a fixed-bed reaction model, and the reaction rate constants and adsorption capacity were obtained for achieving an optimal process design.

  16. Structural trends in off stoichiometric chalcopyrite type compound semiconductors

    International Nuclear Information System (INIS)

    Stephan, Christiane

    2011-01-01

    Energy supply is one of the most controversial topics that are currently discussed in our global community. Most of the energy delivered to the customer today has its origin in fossil and nuclear power plants. Indefinable risks and the radioactive waste repository problem of the latter as well as the global scarcity of fossil resources cause the renewable energies to grow more and more important for achieving sustainability. The main renewable energy sources are wind power, hydroelectric power and solar energy. On the photovoltaic (PV) market different materials are competing as part of different kinds of technologies, with the largest contribution still coming from wafer based crystalline silicon solar cells (95 %). Until now thin film solar cells only contribute a small portion to the whole PV market, but large capacities are under construction. Thin film photovoltaic shows a number of advantages in comparison to wafer based crystalline silicon PV. Among these material usage and production cost reduction are two prominent examples. The type of PV materials, which are analyzed in this work, are high potential compounds that are widely used as absorber layer in thin film solar cells. These are compound semiconductors of the type CuB III C VI 2 (B III = In, Ga and C VI = Se, S). Several years of research have already gone into understanding the efficiency limiting factors for solar cell devices fabricated from this compound. Most of the studies concerning electronic defects are done by spectroscopic methods mostly performed using thin films from different kinds of synthesis, without any real knowledge regarding the structural origin of these defects. This work shows a systematic fundamental structural study of intrinsic point defects that are present within the material at various compositions in CuB III C VI 2 compound semiconductors. The study is done on reference powder samples with well determined chemical composition and using advanced diffraction techniques

  17. Estimation of the limit of detection in semiconductor gas sensors through linearized calibration models.

    Science.gov (United States)

    Burgués, Javier; Jiménez-Soto, Juan Manuel; Marco, Santiago

    2018-07-12

    The limit of detection (LOD) is a key figure of merit in chemical sensing. However, the estimation of this figure of merit is hindered by the non-linear calibration curve characteristic of semiconductor gas sensor technologies such as, metal oxide (MOX), gasFETs or thermoelectric sensors. Additionally, chemical sensors suffer from cross-sensitivities and temporal stability problems. The application of the International Union of Pure and Applied Chemistry (IUPAC) recommendations for univariate LOD estimation in non-linear semiconductor gas sensors is not straightforward due to the strong statistical requirements of the IUPAC methodology (linearity, homoscedasticity, normality). Here, we propose a methodological approach to LOD estimation through linearized calibration models. As an example, the methodology is applied to the detection of low concentrations of carbon monoxide using MOX gas sensors in a scenario where the main source of error is the presence of uncontrolled levels of humidity. Copyright © 2018 Elsevier B.V. All rights reserved.

  18. Magnetoexcitons in type-II semiconductor quantum dots

    Science.gov (United States)

    Fuster, Gonzalo; Barticevic, Zdenka; Pacheco, Monica; Oliveira, Luiz E.

    2004-03-01

    We present a theoretical investigation of excitons in type-II semiconductor quantum dots (QD). In these systems the confinement of electrons inside the QD and the hole outside the QD produces a ring-like structure [1-2]. Recently, Ribeiro et al [3], in a magnetophotoluminescence study of type-II InP/GaAs self-assembled quantum dots, observed Aharonov-Bohm-type oscillations characteristic of the ring topology for neutral excitons. Using a simple model they have derived the groundstate hole energy as a function of the magnetic field, and obtained values for the ring parameters which are in good agreement with the measured values. However, some of the features observed experimentally, in the photoluminescence intensity, can not be well explained under that approach. In this work we present a more realistic model which considers the finite width of the ring and the electron-hole interaction included via a perturbative approach. The calculations are performed within the oneparticle formalism using the effective mass approximation. The confinement potential for electrons is modelled as the superposition of a quantum well potential along the axial direction, and a parabolic lateral confinement potential. The energies for the hole in the ring plane are calculated using the method of reference [4]. Theoretical calculations are in good agreement with the experimental results of reference [3] provided that excitonic effects are properly taken into account. References 1. A.O. Govorov et al., Physica E 13 , 297 (2002). 2. K. L. Janssens et al. Phys. Rev B64, 155324 (2001), and Phys. Rev. B66, 075314 (2002). 3. E. Ribeiro, G. Medeiros-Ribeiro, and W.Carvalho Jr., and A.O. Govorov, condmat/0304092 (2003). 4. Z. Barticevic, G. Fuster, and M. Pacheco,Phys. Rev. B 65, 193307 (2002).

  19. Methods for enhancing P-type doping in III-V semiconductor films

    Science.gov (United States)

    Liu, Feng; Stringfellow, Gerald; Zhu, Junyi

    2017-08-01

    Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

  20. Structural trends in off stoichiometric chalcopyrite type compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Stephan, Christiane

    2011-03-15

    Energy supply is one of the most controversial topics that are currently discussed in our global community. Most of the energy delivered to the customer today has its origin in fossil and nuclear power plants. Indefinable risks and the radioactive waste repository problem of the latter as well as the global scarcity of fossil resources cause the renewable energies to grow more and more important for achieving sustainability. The main renewable energy sources are wind power, hydroelectric power and solar energy. On the photovoltaic (PV) market different materials are competing as part of different kinds of technologies, with the largest contribution still coming from wafer based crystalline silicon solar cells (95 %). Until now thin film solar cells only contribute a small portion to the whole PV market, but large capacities are under construction. Thin film photovoltaic shows a number of advantages in comparison to wafer based crystalline silicon PV. Among these material usage and production cost reduction are two prominent examples. The type of PV materials, which are analyzed in this work, are high potential compounds that are widely used as absorber layer in thin film solar cells. These are compound semiconductors of the type CuB{sup III}C{sup VI}{sub 2} (B{sup III} = In, Ga and C{sup VI} = Se, S). Several years of research have already gone into understanding the efficiency limiting factors for solar cell devices fabricated from this compound. Most of the studies concerning electronic defects are done by spectroscopic methods mostly performed using thin films from different kinds of synthesis, without any real knowledge regarding the structural origin of these defects. This work shows a systematic fundamental structural study of intrinsic point defects that are present within the material at various compositions in CuB{sup III}C{sup VI}{sub 2} compound semiconductors. The study is done on reference powder samples with well determined chemical composition and

  1. Semiconductor inversion contact - a new heterogeneous structure with two-dimensional zero-mass electron gas

    International Nuclear Information System (INIS)

    Volkov, B.A.; Pankratov, O.A.

    1986-01-01

    Semiconductor inversion junction, presenting the contact of materials in which energy levels corresponding to band edges are mutually inverted. At that, the symmetry of wave function of conductivity band in one material coincides with the symmetry of valence band of the other and vice versa. Specificity of the inversion contact is determined by the presence of electron states independent of the transition band type, which are similar to soliton ones in one-dimensional systems. In the region of the junction the states are characterized by linear massless spectrum nondegenerate in spin. Energy spectrum of the inversion junction for semiconductors of the Pb 1-x Sn y Te x type is considered

  2. P-type thin films transistors with solution-deposited lead sulfide films as semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo-Castillo, A.; Salas-Villasenor, A.; Mejia, I. [Department of Materials Science and Engineering, The University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Aguirre-Tostado, S. [Centro de Investigacion en Materiales Avanzados, S. C. Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica, Apodaca, Nuevo Leon, C.P. 666000 (Mexico); Gnade, B.E. [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Quevedo-Lopez, M.A., E-mail: mxq071000@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States)

    2012-01-31

    In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was {approx} 0.09 cm{sup 2} V{sup -1} s{sup -1} whereas the mobility for devices annealed at 150 Degree-Sign C/h in forming gas increased up to {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Besides the thermal annealing, the entire fabrications process was maintained below 100 Degree-Sign C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 Degree-Sign C anneal as well as a function of the PbS active layer thicknesses. - Highlights: Black-Right-Pointing-Pointer Thin film transistors with PbS as semiconductor deposited by chemical bath deposition. Black-Right-Pointing-Pointer Photolithography-based thin film transistors with PbS films at low temperatures. Black-Right-Pointing-Pointer Electron mobility for anneal-PbS devices of {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Black-Right-Pointing-Pointer Highest mobility reported in thin film transistors with PbS as the semiconductor.

  3. Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors

    Directory of Open Access Journals (Sweden)

    Konrad Maier

    2015-09-01

    Full Text Available In this work the low temperature response of metal oxide semiconductor gas sensors is analyzed. Important characteristics of this low-temperature response are a pronounced selectivity to acid- and base-forming gases and a large disparity of response and recovery time constants which often leads to an integrator-type of gas response. We show that this kind of sensor performance is related to the trend of semiconductor gas sensors to adsorb water vapor in multi-layer form and that this ability is sensitively influenced by the surface morphology. In particular we show that surface roughness in the nanometer range enhances desorption of water from multi-layer adsorbates, enabling them to respond more swiftly to changes in the ambient humidity. Further experiments reveal that reactive gases, such as NO2 and NH3, which are easily absorbed in the water adsorbate layers, are more easily exchanged across the liquid/air interface when the humidity in the ambient air is high.

  4. Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors

    Science.gov (United States)

    Maier, Konrad; Helwig, Andreas; Müller, Gerhard; Hille, Pascal; Eickhoff, Martin

    2015-01-01

    In this work the low temperature response of metal oxide semiconductor gas sensors is analyzed. Important characteristics of this low-temperature response are a pronounced selectivity to acid- and base-forming gases and a large disparity of response and recovery time constants which often leads to an integrator-type of gas response. We show that this kind of sensor performance is related to the trend of semiconductor gas sensors to adsorb water vapor in multi-layer form and that this ability is sensitively influenced by the surface morphology. In particular we show that surface roughness in the nanometer range enhances desorption of water from multi-layer adsorbates, enabling them to respond more swiftly to changes in the ambient humidity. Further experiments reveal that reactive gases, such as NO2 and NH3, which are easily absorbed in the water adsorbate layers, are more easily exchanged across the liquid/air interface when the humidity in the ambient air is high. PMID:28793583

  5. Determination of chlorine concentration using single temperature modulated semiconductor gas sensor

    Science.gov (United States)

    Woźniak, Ł.; Kalinowski, P.; Jasiński, G.; Jasiński, P.

    2016-11-01

    A periodic temperature modulation using sinusoidal heater voltage was applied to a commercial SnO2 semiconductor gas sensor. Resulting resistance response of the sensor was analyzed using a feature extraction method based on Fast Fourier Transformation (FFT). The amplitudes of the higher harmonics of the FFT from the dynamic nonlinear responses of measured gas were further utilized as an input for Artificial Neuron Network (ANN). Determination of the concentration of chlorine was performed. Moreover, this work evaluates the sensor performance upon sinusoidal temperature modulation.

  6. Local and regular plasma oscillations in bulk donor type semiconductors

    OpenAIRE

    Kornyushin, Yuri

    2007-01-01

    Restoring force acts on the electronic cloud of the outer electrons of a neutral or charged impurity atom when it is shifted relative to the inner charged core. Because of this the dipole oscillation arises, which influences considerably the dispersion law of the plasma oscillation in bulk donor semiconductors. Assuming that only one transition of the outer electron from the ground state to the first excited state is essential, the dispersion law is calculated. It is shown that calculated dis...

  7. Donor type semiconductor at low temperature as maser active medium

    OpenAIRE

    Kornyushin, Yuri

    2007-01-01

    In some semiconductors donor impurity atoms can attract additional electrons, forming negative donor impurity ions. Thus we have 3 energy levels for electrons: zero energy levels at the bottom of the conductivity band, negative energy levels of the bounded electrons of the negative donor impurity ions, and deeper negative energy levels of the outer electrons of the neutral donor impurity atoms. So the donor impurity atoms could serve as active centres for a maser. The maximum achievable relat...

  8. The Redox Potentials of n-type Colloidal Semiconductor Nanocrystals

    Science.gov (United States)

    Carroll, Gerard Michael

    This thesis presents investigations for two related fields of semiconductor electrochemistry: redox potential determination of colloidal semiconductor nanocrystals, and mechanistic analysis of photoelectrochemical water oxidation with electrocatalyst modified mesostructured hematite photoanodes. Adapting electrochemical techniques to colloidal semiconductor nanocrystals (SC NC) is a long-standing challenge for this class of materials. Subject to a variety of complications, standard voltammetric techniques are not as straight forward for SC NCs as they are for small molecules. As a result, researchers have developed creative ways to side step these complications by coupling electrochemistry with NC spectroscopy. Chapter 1 discusses the fundamental electronic and spectroscopic properties of SC NCs at different redox states. We present a brief review of some of the notable studies employing SC NC spectroelectrochemistry that provide the theoretical and experimental context for the following chapters. Chapter 2 presents an investigation on NC redox potentials of photochemically reduced colloidal ZnO NCs using a solvated redox-indicator method. In the one electron limit, conduction band electrons show evidence of quantum confinement, but at higher electron concentrations, the NC Fermi-level becomes dependent on the electron density across all NC sizes. Chapter 3 outlines a poteniometric method for monitoring the NC redox potentials in situ. NC redox potentials for ZnO and CdSe are measured, and as predicted from these measurements, spontaneous electron transfer from CdSe to ZnO is demonstrated. Chapter 4 details the impact of the surface of CdSe NCs on the NC redox potentials. We find that the ratio of Cd2+:Se2- on the surface of CdSe NCs changes both the NC band edge potentials, as well as the maximum electron density achievable by photochemical reduction. These changes are proposed to arise from interfacial dipoles when CdSe has a Se2-rich surface. Chapters 5 and 6

  9. Reversible carrier-type transitions in gas-sensing oxides and nanostructures.

    Science.gov (United States)

    Arulsamy, Andrew D; Eleršič, Kristina; Modic, Martina; Cvelbar, Uroš; Mozetič, Miran

    2010-12-03

    Despite many important applications of α-Fe(2)O(3) and Fe doped SnO(2) in semiconductors, catalysis, sensors, clinical diagnosis and treatments, one fundamental issue that is crucial to these applications remains theoretically equivocal--the reversible carrier-type transition between n- and p-type conductivities during gas-sensing operations. Herein, we present an unambiguous and rigorous theoretical analysis in order to explain why and how the oxygen vacancies affect the n-type semiconductors α-Fe(2)O(3) and Fe-doped SnO(2), in which they are both electronically and chemically transformed into a p-type semiconductor. Furthermore, this reversible transition also occurs on the oxide surfaces during gas-sensing operation due to physisorbed gas molecules (without any chemical reaction). We make use of the ionization energy theory and its renormalized ionic displacement polarizability functional to reclassify, generalize and explain the concept of carrier-type transition in solids, and during gas-sensing operation. The origin of such a transition is associated with the change in ionic polarizability and the valence states of cations in the presence of oxygen vacancies and physisorped gas molecules.

  10. Semiconductor device-based sensors for gas, chemical, and biomedical applications

    CERN Document Server

    Ren, Fan

    2011-01-01

    Sales of U.S. chemical sensors represent the largest segment of the multi-billion-dollar global sensor market, which includes instruments for chemical detection in gases and liquids, biosensors, and medical sensors. Although silicon-based devices have dominated the field, they are limited by their general inability to operate in harsh environments faced with factors such as high temperature and pressure. Exploring how and why these instruments have become a major player, Semiconductor Device-Based Sensors for Gas, Chemical, and Biomedical Applications presents the latest research, including or

  11. On-chip growth of semiconductor metal oxide nanowires for gas sensors: A review

    Directory of Open Access Journals (Sweden)

    Chu Manh Hung

    2017-09-01

    Full Text Available Semiconductor metal oxide nanowires (SMO-NWs show great potential for novel gas sensor applications because of their distinct properties, such as a high surface area to volume aspect ratio, high crystallinity and perfect pathway for electron transfer (length of NW. SMO-NW sensors can be configured as resistors or field-effect transistors for gas detection and different configurations, such as a single NW, multiple NWs, and networked NW films, have been established. Surface-functionalizing NWs with catalyst elements and self-heating NWs provide additional advantages for highly selective and low-power consumption gas sensors. However, an appropriate design of SMO-NWs is of practical importance in enhancing the gas-sensing performance of SMO-NW sensors. The on-chip growth of SMO-NWs possesses many advantages which can thus be effectively used for the large-scale fabrication of SMO-NW sensors with improved gas response and stability. This review aims to provide up-to-date information on the on-chip fabrication of SnO2, ZnO, WO3, CuO, and other SMO-NW sensors. It also discusses a variety of promising approaches that help advance the on-chip fabrication of SMO-NW-based gas sensors and other NW-based devices.

  12. Metal-oxide-semiconductor based gas sensors: screening, preparation, and integration.

    Science.gov (United States)

    Zhang, Jian; Qin, Ziyu; Zeng, Dawen; Xie, Changsheng

    2017-03-01

    Metal-oxide-semiconductor (MOS) based gas sensors have been considered a promising candidate for gas detection over the past few years. However, the sensing properties of MOS-based gas sensors also need to be further enhanced to satisfy the higher requirements for specific applications, such as medical diagnosis based on human breath, gas detection in harsh environments, etc. In these fields, excellent selectivity, low power consumption, a fast response/recovery rate, low humidity dependence and a low limit of detection concentration should be fulfilled simultaneously, which pose great challenges to the MOS-based gas sensors. Recently, in order to improve the sensing performances of MOS-based gas sensors, more and more researchers have carried out extensive research from theory to practice. For a similar purpose, on the basis of the whole fabrication process of gas sensors, this review gives a presentation of the important role of screening and the recent developments in high throughput screening. Subsequently, together with the sensing mechanism, the factors influencing the sensing properties of MOSs involved in material preparation processes were also discussed in detail. It was concluded that the sensing properties of MOSs not only depend on the morphological structure (particle size, morphology, pore size, etc.), but also rely on the defect structure and heterointerface structure (grain boundaries, heterointerfaces, defect concentrations, etc.). Therefore, the material-sensor integration was also introduced to maintain the structural stability in the sensor fabrication process, ensuring the sensing stability of MOS-based gas sensors. Finally, the perspectives of the MOS-based gas sensors in the aspects of fundamental research and the improvements in the sensing properties are pointed out.

  13. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

    KAUST Repository

    Wang, Zhenwei

    2016-02-16

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

  14. Intelligent Combustion. A gas boiler with a new control and safety device using the signals of a semiconductor-sensor

    Energy Technology Data Exchange (ETDEWEB)

    Rusche, S.; Kostrzewa, G.

    1999-07-01

    The present controls of small gas boilers use an actual differential pressure of the flowing air to regulate the gas valve. It is also possible to combine the change of the gas flow rate and the air volume mechanically. In both of these methods, it is neglected that the air volume required for complete combustion is strongly affected by changing gas quality. The article discusses the use of a BaSnO3 semiconductor control sensor, which is heated by the flame and changes electrical resistance with temperature, O2 and CO content in the burning chamber. It also describes a new burner concept using the sensor.

  15. Development of Osaka gas type planar SOFC

    Energy Technology Data Exchange (ETDEWEB)

    Iha, M.; Shiratori, A.; Chikagawa, O. [Murata Mfg. Co., Ltd., Shiga (Japan)] [and others

    1996-12-31

    Osaka Gas Co. has been developing a planar type SOFC (OG type SOFC) which has a suitable structure for stacking. Murata Mfg. Co. has begun to develop the OG type SOFC stack through joint program since 1993. Figure 1 shows OG type cell structure. Because each cell is sustained by cell holders acting air manifold, the load of upper cell is not put on the lower cells. Single cell is composed of 3-layered membrane and LaCrO{sub 3} separator. 5 single cells are mounted on the cell holder, connected with Ni felt electrically, and bonded by glassy material sealant. We call the 5-cell stack a unit. Stacking 13 units, we succeeded 870 W generation in 1993. But the power density was low, 0.11 Wcm{sup -2} because of crack in the electrolyte and gas leakage at some cells.

  16. X-ray measurement with Pin type semiconductor detectors

    International Nuclear Information System (INIS)

    Ramirez J, F.J.

    1999-01-01

    Here are presented the experimental results of the applications of Pin type radiation detectors developed in a National Institute of Nuclear Research (ININ) project, in the measurement of low energy gamma and X-rays. The applications were oriented mainly toward the Medical Physics area. It is planned other applications which are in process of implementation inside the National Institute of Nuclear Research in Mexico. (Author)

  17. Air-Stable n-type Conductors and Semiconductors

    Science.gov (United States)

    2015-07-14

    considerable challenge. Here we report a facile method to efficiently identify suitable semiconducting polymers for organic stretchable transistors...NOT RETURN YOUR FORM TO THE ABOVE ORGANIZATION . 1. REPORT DATE (DD-MM-YYYY) 03-08-2015 2. REPORT TYPE Final Performance 3. DATES COVERED (From - To) 15...PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Zhenan Bao 5d.  PROJECT NUMBER 5e.  TASK NUMBER 5f.  WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAME(S) AND

  18. n/p-Type changeable semiconductor TiO{sub 2} prepared from NTA

    Energy Technology Data Exchange (ETDEWEB)

    Li Qiuye; Wang Xiaodong; Jin Zhensheng, E-mail: zhenshengjin@henu.edu.cn; Yang Dagang; Zhang Shunli; Guo Xinyong; Yang Jianjun; Zhang Zhijun [Henan University, Key Laboratory of Special Functional Materials (China)

    2007-10-15

    A novel kind of nano-sized TiO{sub 2} (anatase) was obtained by high-temperature (400-700 deg. C) dehydration of nanotube titanic acid (H{sub 2}Ti{sub 2}O{sub 4}(OH){sub 2}, NTA). The high-temperature (400-700 deg. C) dehydrated nanotube titanic acids (HD-NTAs) with a unique defect structure exhibited a p-type semiconductor behavior under visible-light irradiation ({lambda}{>=} 420nm, E{sub photon}=2.95 eV), whereas exhibited an n-type semiconductor behavior irradiated with UV light ({lambda}{>=} 365nm, E{sub photon}=3.40 eV)

  19. Space-charge solitary waves and double layers in n-type compensated semiconductor quantum plasma

    Science.gov (United States)

    Banerjee, S.; Ghosh, B.

    2018-03-01

    Using quantum hydrodynamic (QHD) model and standard reductive perturbation method, we have investigated the formation and characteristics of space-charge solitary waves and double layers in n-type compensated drifting semiconductor plasma with varying doping profiles. Through numerical analysis, it is shown that the structures of space-charge solitary waves and double layers depend significantly on electron drift and compensation parameter which measures a comparative proportion of the donor, acceptor and intrinsic ion concentrations.

  20. Reliability of semiconductor and gas-filled diodes for over-voltage protection exposed to ionizing radiation

    Directory of Open Access Journals (Sweden)

    Stanković Koviljka

    2009-01-01

    Full Text Available The wide-spread use of semiconductor and gas-filled diodes for non-linear over-voltage protection results in a variety of possible working conditions. It is therefore essential to have a thorough insight into their reliability in exploitation environments which imply exposure to ionizing radiation. The aim of this paper is to investigate the influence of irradiation on over-voltage diode characteristics by exposing the diodes to californium-252 combined neutron/gamma radiation field. The irradiation of semiconductor over-voltage diodes causes severe degradation of their protection characteristics. On the other hand, gas-filled over-voltage diodes exhibit a temporal improvement of performance. The results are presented with the accompanying theoretical interpretations of the observed changes in over-voltage diode behaviour, based on the interaction of radiation with materials constituting the diodes.

  1. Low Power Operation of Temperature-Modulated Metal Oxide Semiconductor Gas Sensors.

    Science.gov (United States)

    Burgués, Javier; Marco, Santiago

    2018-01-25

    Mobile applications based on gas sensing present new opportunities for low-cost air quality monitoring, safety, and healthcare. Metal oxide semiconductor (MOX) gas sensors represent the most prominent technology for integration into portable devices, such as smartphones and wearables. Traditionally, MOX sensors have been continuously powered to increase the stability of the sensing layer. However, continuous power is not feasible in many battery-operated applications due to power consumption limitations or the intended intermittent device operation. This work benchmarks two low-power, duty-cycling, and on-demand modes against the continuous power one. The duty-cycling mode periodically turns the sensors on and off and represents a trade-off between power consumption and stability. On-demand operation achieves the lowest power consumption by powering the sensors only while taking a measurement. Twelve thermally modulated SB-500-12 (FIS Inc. Jacksonville, FL, USA) sensors were exposed to low concentrations of carbon monoxide (0-9 ppm) with environmental conditions, such as ambient humidity (15-75% relative humidity) and temperature (21-27 °C), varying within the indicated ranges. Partial Least Squares (PLS) models were built using calibration data, and the prediction error in external validation samples was evaluated during the two weeks following calibration. We found that on-demand operation produced a deformation of the sensor conductance patterns, which led to an increase in the prediction error by almost a factor of 5 as compared to continuous operation (2.2 versus 0.45 ppm). Applying a 10% duty-cycling operation of 10-min periods reduced this prediction error to a factor of 2 (0.9 versus 0.45 ppm). The proposed duty-cycling powering scheme saved up to 90% energy as compared to the continuous operating mode. This low-power mode may be advantageous for applications that do not require continuous and periodic measurements, and which can tolerate slightly higher

  2. Thin Film Transistor Gas Sensors Incorporating High-Mobility Diketopyrrolopyrole-Based Polymeric Semiconductor Doped with Graphene Oxide.

    Science.gov (United States)

    Cheon, Kwang Hee; Cho, Jangwhan; Kim, Yun-Hi; Chung, Dae Sung

    2015-07-01

    In this work, we fabricated a diketopyrrolopyrole-based donor-acceptor copolymer composite film. This is a high-mobility semiconductor component with a functionalized-graphene-oxide (GO) gas-adsorbing dopant, used as an active layer in gas-sensing organic-field-effect transistor (OFET) devices. The GO content of the composite film was carefully controlled so that the crystalline orientation of the semiconducting polymer could be conserved, without compromising its gas-adsorbing ability. The resulting optimized device exhibited high mobility (>1 cm(2) V(-1) s(-1)) and revealed sensitive response during programmed exposure to various polar organic molecules (i.e., ethanol, acetone, and acetonitrile). This can be attributed to the high mobility of polymeric semiconductors, and also to their high surface-to-volume ratio of GO. The operating mechanism of the gas sensing GO-OFET is fully discussed in conjunction with charge-carrier trap theory. It was found that each transistor parameter (e.g., mobility, threshold voltage), responds independently to each gas molecule, which enables high selectivity of GO-OFETs for various gases. Furthermore, we also demonstrated practical GO-OFET devices that operated at low voltage (<1.5 V), and which successfully responded to gas exposure.

  3. Nanostructured p-Type Semiconductor Electrodes and Photoelectrochemistry of Their Reduction Processes

    Directory of Open Access Journals (Sweden)

    Matteo Bonomo

    2016-05-01

    Full Text Available This review reports the properties of p-type semiconductors with nanostructured features employed as photocathodes in photoelectrochemical cells (PECs. Light absorption is crucial for the activation of the reduction processes occurring at the p-type electrode either in the pristine or in a modified/sensitized state. Beside thermodynamics, the kinetics of the electron transfer (ET process from photocathode to a redox shuttle in the oxidized form are also crucial since the flow of electrons will take place correctly if the ET rate will overcome that one of recombination and trapping events which impede the charge separation produced by the absorption of light. Depending on the nature of the chromophore, i.e., if the semiconductor itself or the chemisorbed dye-sensitizer, different energy levels will be involved in the cathodic ET process. An analysis of the general properties and requirements of electrodic materials of p-type for being efficient photoelectrocatalysts of reduction processes in dye-sensitized solar cells (DSC will be given. The working principle of p-type DSCs will be described and extended to other p-type PECs conceived and developed for the conversion of the solar radiation into chemical products of energetic/chemical interest like non fossil fuels or derivatives of carbon dioxide.

  4. Two-dimensional ferromagnet/semiconductor transition metal dichalcogenide contacts: p-type Schottky barrier and spin-injection control

    KAUST Repository

    Gan, Liyong

    2013-09-26

    We study the ferromagnet/semiconductor contacts formed by transition metal dichalcogenide monolayers, focusing on semiconducting MoS2 and WS2 and ferromagnetic VS2. We investigate the degree of p-type doping and demonstrate tuning of the Schottky barrier height by vertical compressive pressure. An analytical model is presented for the barrier heights that accurately describes the numerical findings and is expected to be of general validity for all transition metal dichalcogenide metal/semiconductor contacts. Furthermore, magnetic proximity effects induce a 100% spin polarization at the Fermi level in the semiconductor where the spin splitting increases up to 0.70 eV for increasing pressure.

  5. High-Resolution p-Type Metal Oxide Semiconductor Nanowire Array as an Ultrasensitive Sensor for Volatile Organic Compounds.

    Science.gov (United States)

    Cho, Soo-Yeon; Yoo, Hae-Wook; Kim, Ju Ye; Jung, Woo-Bin; Jin, Ming Liang; Kim, Jong-Seon; Jeon, Hwan-Jin; Jung, Hee-Tae

    2016-07-13

    The development of high-performance volatile organic compound (VOC) sensor based on a p-type metal oxide semiconductor (MOS) is one of the important topics in gas sensor research because of its unique sensing characteristics, namely, rapid recovery kinetics, low temperature dependence, high humidity or thermal stability, and high potential for p-n junction applications. Despite intensive efforts made in this area, the applications of such sensors are hindered because of drawbacks related to the low sensitivity and slow response or long recovery time of p-type MOSs. In this study, the VOC sensing performance of a p-type MOS was significantly enhanced by forming a patterned p-type polycrystalline MOS with an ultrathin, high-aspect-ratio (∼25) structure (∼14 nm thickness) composed of ultrasmall grains (∼5 nm size). A high-resolution polycrystalline p-type MOS nanowire array with a grain size of ∼5 nm was fabricated by secondary sputtering via Ar(+) bombardment. Various p-type nanowire arrays of CuO, NiO, and Cr2O3 were easily fabricated by simply changing the sputtering material. The VOC sensor thus fabricated exhibited higher sensitivity (ΔR/Ra = 30 at 1 ppm hexane using NiO channels), as well as faster response or shorter recovery time (∼30 s) than that of previously reported p-type MOS sensors. This result is attributed to the high resolution and small grain size of p-type MOSs, which lead to overlap of fully charged zones; as a result, electrical properties are predominantly determined by surface states. Our new approach may be used as a route for producing high-resolution MOSs with particle sizes of ∼5 nm within a highly ordered, tall nanowire array structure.

  6. A Density Functional Theory Study of Doped Tin Monoxide as a Transparent p-type Semiconductor

    KAUST Repository

    Bianchi Granato, Danilo

    2012-05-01

    In the pursuit of enhancing the electronic properties of transparent p-type semiconductors, this work uses density functional theory to study the effects of doping tin monoxide with nitrogen, antimony, yttrium and lanthanum. An overview of the theoretical concepts and a detailed description of the methods employed are given, including a discussion about the correction scheme for charged defects proposed by Freysoldt and others [Freysoldt 2009]. Analysis of the formation energies of the defects points out that nitrogen substitutes an oxygen atom and does not provide charge carriers. On the other hand, antimony, yttrium, and lanthanum substitute a tin atom and donate n-type carriers. Study of the band structure and density of states indicates that yttrium and lanthanum improves the hole mobility. Present results are in good agreement with available experimental works and help to improve the understanding on how to engineer transparent p-type materials with higher hole mobilities.

  7. Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors

    KAUST Repository

    Caraveo-Frescas, J. A.

    2013-11-25

    p-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 °C. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm2 V−1 s−1) of any p-type oxide semiconductor processed at similar temperature. Compared to thin film transistors, the SnO nanowire transistors exhibit five times higher mobility and one order of magnitude lower subthreshold swing. The SnO nanowire transistors show three times lower threshold voltages (−1 V) than the best reported SnO thin film transistors and fifteen times smaller than p-type Cu 2O nanowire transistors. Gate dielectric and process temperature are critical to achieving such performance.

  8. Inorganic p-Type Semiconductors: Their Applications and Progress in Dye-Sensitized Solar Cells and Perovskite Solar Cells

    Directory of Open Access Journals (Sweden)

    Ming-Hsien Li

    2016-04-01

    Full Text Available Considering the increasing global demand for energy and the harmful ecological impact of conventional energy sources, it is obvious that development of clean and renewable energy is a necessity. Since the Sun is our only external energy source, harnessing its energy, which is clean, non-hazardous and infinite, satisfies the main objectives of all alternative energy strategies. With attractive features, i.e., good performance, low-cost potential, simple processibility, a wide range of applications from portable power generation to power-windows, photoelectrochemical solar cells like dye-sensitized solar cells (DSCs represent one of the promising methods for future large-scale power production directly from sunlight. While the sensitization of n-type semiconductors (n-SC has been intensively studied, the use of p-type semiconductor (p-SC, e.g., the sensitization of wide bandgap p-SC and hole transport materials with p-SC have also been attracting great attention. Recently, it has been proved that the p-type inorganic semiconductor as a charge selective material or a charge transport material in organometallic lead halide perovskite solar cells (PSCs shows a significant impact on solar cell performance. Therefore the study of p-type semiconductors is important to rationally design efficient DSCs and PSCs. In this review, recent published works on p-type DSCs and PSCs incorporated with an inorganic p-type semiconductor and our perspectives on this topic are discussed.

  9. Preparation of a stable sol suspension of Pd-loaded SnO₂ nanocrystals by a photochemical deposition method for highly sensitive semiconductor gas sensors.

    Science.gov (United States)

    Yuasa, Masayoshi; Kida, Tetsuya; Shimanoe, Kengo

    2012-08-01

    A stable sol suspension of Pd-loaded SnO(2) nanocrystals, which is valid for both fundamental studies of semiconductor gas sensor and fabrications of a micro gas sensor, was fabricated by the photochemical deposition of PdCl(4)(2-) onto SnO(2) in an aqueous solution. UV light was irradiated on a mixture of a SnO(2) sol obtained through a hydrothermal treatment of stannic acid gel in the presence of PdCl(4)(2-) and ethanol/water at pH 2. A stable sol suspension of Pd-loaded SnO(2) was successfully obtained by controlling the pH of the above suspension to 10.5 after UV irradiation. Thin-film type sensor devices (film thickness ∼200 nm) using Pd-loaded SnO(2) nanocrystal were successfully fabricated by a spin-coating method. Gas sensing measurements showed that the deposition of Pd on the SnO(2) nanocrystals resulted in large electrical sensitization effect. The maximum gas sensitization effect was obtained at 0.125 mol % Pd loading. Moreover, the Pd loading lowered the temperature, in which the maximum sensor response to H(2) was obtained, due to the efficient catalytic combustion of H(2) on Pd.

  10. A Customized Metal Oxide Semiconductor-Based Gas Sensor Array for Onion Quality Evaluation: System Development and Characterization

    Science.gov (United States)

    Konduru, Tharun; Rains, Glen C.; Li, Changying

    2015-01-01

    A gas sensor array, consisting of seven Metal Oxide Semiconductor (MOS) sensors that are sensitive to a wide range of organic volatile compounds was developed to detect rotten onions during storage. These MOS sensors were enclosed in a specially designed Teflon chamber equipped with a gas delivery system to pump volatiles from the onion samples into the chamber. The electronic circuit mainly comprised a microcontroller, non-volatile memory chip, and trickle-charge real time clock chip, serial communication chip, and parallel LCD panel. User preferences are communicated with the on-board microcontroller through a graphical user interface developed using LabVIEW. The developed gas sensor array was characterized and the discrimination potential was tested by exposing it to three different concentrations of acetone (ketone), acetonitrile (nitrile), ethyl acetate (ester), and ethanol (alcohol). The gas sensor array could differentiate the four chemicals of same concentrations and different concentrations within the chemical with significant difference. Experiment results also showed that the system was able to discriminate two concentrations (196 and 1964 ppm) of methlypropyl sulfide and two concentrations (145 and 1452 ppm) of 2-nonanone, two key volatile compounds emitted by rotten onions. As a proof of concept, the gas sensor array was able to achieve 89% correct classification of sour skin infected onions. The customized low-cost gas sensor array could be a useful tool to detect onion postharvest diseases in storage. PMID:25587975

  11. A Customized Metal Oxide Semiconductor-Based Gas Sensor Array for Onion Quality Evaluation: System Development and Characterization

    Directory of Open Access Journals (Sweden)

    Tharun Konduru

    2015-01-01

    Full Text Available A gas sensor array, consisting of seven Metal Oxide Semiconductor (MOS sensors that are sensitive to a wide range of organic volatile compounds was developed to detect rotten onions during storage. These MOS sensors were enclosed in a specially designed Teflon chamber equipped with a gas delivery system to pump volatiles from the onion samples into the chamber. The electronic circuit mainly comprised a microcontroller, non-volatile memory chip, and trickle-charge real time clock chip, serial communication chip, and parallel LCD panel. User preferences are communicated with the on-board microcontroller through a graphical user interface developed using LabVIEW. The developed gas sensor array was characterized and the discrimination potential was tested by exposing it to three different concentrations of acetone (ketone, acetonitrile (nitrile, ethyl acetate (ester, and ethanol (alcohol. The gas sensor array could differentiate the four chemicals of same concentrations and different concentrations within the chemical with significant difference. Experiment results also showed that the system was able to discriminate two concentrations (196 and 1964 ppm of methlypropyl sulfide and two concentrations (145 and 1452 ppm of 2-nonanone, two key volatile compounds emitted by rotten onions. As a proof of concept, the gas sensor array was able to achieve 89% correct classification of sour skin infected onions. The customized low-cost gas sensor array could be a useful tool to detect onion postharvest diseases in storage.

  12. Two stream instability in n-type gallium arsenide semiconductor quantum plasma

    Science.gov (United States)

    Ghosh, S.; Muley, Apurva

    2018-01-01

    By using quantum hydrodynamic model, we derive a generalized dielectric response function for two stream instability (convective only) in n-type gallium arsenide semiconductor plasma. We investigate the phase and amplification profiles of two stream instability with externally applied electric field ranging from 2600 to 4000 kV m-1 in presence of non-dimensional quantum parameter- H. In this range, a significant number of electrons in satellite valley become comparable to the number of electrons in central valley. The presence of quantum corrections in plasma medium induces two novel modes; one of it has amplifying nature and propagates in forward direction. It also modifies the spectral profile of four pre-existing modes in classical plasma. The existence of two stream instability is also established analytically by deriving the real part of longitudinal electrokinetic power flow density.

  13. Detection of liquid petroleum gas using mixed nanosized tungsten oxide-based thick-film semiconductor sensor.

    Science.gov (United States)

    Chaudhari, G N; Bende, A M; Bodade, A B; Patil, S S; Manorama, S V

    2006-03-15

    The thick-film semiconductor sensor for liquid petroleum gas (LPG) detection was fabricated using a mixed WO(3)-based sensor. We present the characterization of both their structural properties by means of XRD measurements and the electrical characteristics by using gas-sensing properties. The sensing characteristics such as sensitivity, working range, cross-sensitivity and response time were studied by using nanosized WO(3)-based mixed with different metal oxides (SnO(2), TiO(2) and In(2)O(3)) and doped with noble metals (Au, Pd and Pt). The WO(3)-based mixed with 5 wt.% In(2)O(3) and 0.5 wt.% Pd showed the higher sensing characteristic at low concentration of LPG sensor at an operating temperature 225 degrees C.

  14. Numerical simulation research on gas migration with Y type ventilation

    Science.gov (United States)

    Gou, Yanan; Han, Xuezheng

    2018-01-01

    The ventilation way of the working face has a great influence to goaf flow field and gas migration, the existing U-shaped ventilation face wind serious overrun, Y type ventilation mode is put forward, and the mathematic control equation of the gas moving rule is established. Put the Gaozhuang coal mine west five mining area as the model, set up calculation model. And the gas concentration is simulated, the simulation results show that the Y type ventilation ways can intercept goaf gas into the corner on the working plane and return air lane, effectively avoid the work of top corner gas accumulation.

  15. Fabrication and performance analysis of a simple, cost-effective copper oxide / zinc oxide semiconductors composite for gas sensing

    Science.gov (United States)

    Velazquez, Rafael; Rivera, Manuel; Li, Eric; Feng, Peter

    We report on our studies of composite zinc oxide semiconductor (COS) nanoparticles as sensing materials for the development of high-performance gas sensors. The average diameter of the nanoparticles is 40 nm. The basic electrical properties of sensing materials have been measured. The morphologic surface and crystalline structures of COS are characterized by using scanning electron microscopy (SEM) and Raman scattering spectroscopy, respectively. By using synthesized COS of CuO-ZnO materials, prototypic highly sensitive gas sensors have been designed, fabricated and tested. Important stability and repeatability features have been obtained. The sensitivities of the COS based sensors to methane and hydrogen gases as a function of time and the gas concentrations have been determined. Various sensing parameters including the sensitivity, response time, recovery time, and thermal effect on the gas sensor performance have also been investigated in order to reveal the sensing ability. Analyses of experimental data indicate that the obtained response and recovery are almost 10 times faster than conventional sensors constructed solely from one material.

  16. Antiferromagnetic bipolar semiconductor LaMnPO with ZrCuSiAs-type structure

    Science.gov (United States)

    Yanagi, Hiroshi; Watanabe, Takumi; Kodama, Katsuaki; Iikubo, Satoshi; Shamoto, Shin-ichi; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

    2009-05-01

    Electronic and magnetic properties of a layered compound LaMnPO are examined in relation to a newly discovered iso-structural superconductor LaFeAs(P)O. Neutron diffraction measurements, together with temperature dependent magnetic susceptibility, clarify that LaMnPO is an antiferromagnet at least up to 375 K. The spin moment of a Mn ion is determined to be 2.26 μB at room temperature, and the spin configuration is antiparallel in the Mn-P plane and parallel between the Mn-P planes, which is rather different from that of LaFeAsO. Optical absorption spectra, photoemission spectra, and temperature dependent electrical conductivity indicate that LaMnPO is a semiconductor. Furthermore, nominally undoped LaMnPO exhibits n-type conduction while the conduction type is changed by doping of Cu or Ca to the La sites, indicating that LaMnPO is a bipolar conductor. Density functional calculation using the GGA+U approximation supports the above conclusions; the electronic band structure has an open band gap and the antiferromagnetic spin configuration is more stable than the ferromagnetic one.

  17. Effects of electromagnetic shielding cases for semiconductor-type electronic personal dosimeters on preventing electromagnetic interference

    International Nuclear Information System (INIS)

    Deji, Shizuhiko; Ito, Shigeki; Nishizawa, Kunihide; Saze, Takuya; Mori, Kazuyuki

    2005-01-01

    Performance of electromagnetic shielding cases for preventing malfunction of semiconductor-type electronic personal dosimeters (SEPDs) caused by high frequency electromagnetic fields emitted from a digital cellular telephone (cell phone) and a card reader of access control system were analyzed. The cases were handcrafted by using cloth of activated carbon fiber, polyester film laminated metal, and two kinds of metal netting. Five kinds of SEPDs put in the cases were exposed to the high frequency electromagnetic fields for 50 sec or 1 min. The cases prevented perfectly the malfunction due to the cell phone. The cases shortened distances required to prevent the malfunction due to the card reader, but did not prevent the malfunction. The electromagnetic immunity level of SEPD inserted in the cases increased from greater than 11.2 to greater than 18.7 times for the cell phone and from 1.1 to greater than 4.3 times for the card reader. The maximum of electromagnetic shielding effectiveness of each case was greater than 18.7 times for the cell phone and greater than 4.3 times for the card reader. (author)

  18. A clinical implementation of in vivo dosimetry with n-type Isorad semiconductor diodes

    Directory of Open Access Journals (Sweden)

    Rutonjski Laza M.

    2014-01-01

    Full Text Available The study was aimed to check the radiotherapy treatment accuracy and definition of action levels during implementation of in vivo dosimetry as a part of quality assurance program. The calibration and correction factors for in vivo entrance dose measurements for six n-type Isorad semiconductor diodes were determined as recommended by the European Society for Radiotherapy and Oncology Booklet No. 5. The patients for in vivo measurements have been divided in groups, according to the treatment site/techique, in order to investigate and detect the groups where the uncertainty was larger or where a systematic error occurred. The tolerance/action levels for all groups were also defined and checked. In this study, the entrance dose measurements were performed for total of 451 treatment fields, and 338 patients over one year period. The mean value and the standard deviation for different groups were: breast +1.0% ± 2.89%(1 SD, brain, and head and neck - +0.74% ± 2.04%(1 SD, and isocentric pelvis and abdomen - +0.1% ± 2.86%(1 SD. All measurements - +0.72% ± 2.64%(1 SD. In our experience, systematic in vivo dosimetry proved to be a very useful tool for quality assurance of patient's plan and treatment, both in detecting systematic errors and for estimating the accuracy of radiotherapy treatment delivery.

  19. X-ray measurement with Pin type semiconductor detectors; Medicion de rayos X con detectores de semiconductor tipo PIN

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez J, F.J. [Instituto Nacional de Investigaciones Nucleares, Departamento de Electronica, C.P. 52045 Salazar, Estado de Mexico (Mexico)

    2000-07-01

    Here are presented the experimental results of the applications of Pin type radiation detectors developed in a National Institute of Nuclear Research (ININ) project, in the measurement of low energy gamma and X-rays. The applications were oriented mainly toward the Medical Physics area. It is planned other applications which are in process of implementation inside the National Institute of Nuclear Research in Mexico. (Author)

  20. Mott type variable range hopping conduction and magnetoresistance in p-type CuIn3Te5 semiconductor compound

    Science.gov (United States)

    Essaleh, L.; Wasim, S. M.; Marín, G.; Rincón, C.; Amhil, S.; Galibert, J.

    2017-07-01

    Variable range hopping (VRH) conduction of Mott type for a constant and non-vanishing density of states at the Fermi level is observed over a wide range of temperature between 45 and 210 K in the ordered defect compound CuIn3Te5 (CIT135). For this type of electrical conduction at a very high temperature, not reported before in elemental, II-VI, and I-III-VI2 compound semiconductors, we employed three different methods to analyze the data and to confirm this behavior. The occurrence of VRH at very high temperatures is explained as due to the presence of the electrically inactive ( InCu+2 + 2 VCu -1) donor-acceptor defect pairs in CIT135. This defect-pair partially annihilates the shallow acceptor defect state Cu vacancy, which is responsible for the activated electrical conductivity observed in p-type ternary I-III-VI2 chalcopyrite compounds in the temperature range of liquid nitrogen. In such conditions, the only acceptor level available for electrical conduction in CIT135 is a deep acceptor state whose activation energy is about 200 meV and cannot be activated below about 200 K. Hence, the VRH conduction mechanism dominates the electrical properties of this material up to about 200 K. The study of the temperature and magnetic field dependence of the magnetoresistance (MR) up to 27 T is made by taking into consideration different theoretical models. To explain the negative MR at lower fields, the theory based on quantum interference is used. At higher magnetic fields, the MR becomes positive and is explained with the model based on the shrinkage of the wave function.

  1. Spatially resolved molecular gas in early-type galaxies

    NARCIS (Netherlands)

    Davis, T. A.; Alatalo, K.; Bureau, M.; Young, L.; Blitz, L.; Crocker, A.; Bayet, E.; Bois, M.; Bournaud, F.; Cappellari, M.; Davies, R. L.; Duc, P.-A.; de Zeeuw, P. T.; Emsellem, E.; Falcon-Barroso, J.; Khochfar, S.; Krajnovic, D.; Kuntschner, H.; Lablanche, P.-Y.; McDermid, R. M.; Morganti, R.; Naab, T.; Sarzi, M.; Scott, N.; Serra, P.; Weijmans, A.

    In around ~25% of early-type galaxies (ETGs) UV emission from young stellar populations is present. Molecular gas reservoirs have been detected in these systems (e.g. Young et al. (2011), providing the fuel for this residual star-formation. The environment in which this molecular gas is found is

  2. Nitrogen-monoxide gas-sensing properties of transparent p-type copper-oxide nanorod arrays

    Energy Technology Data Exchange (ETDEWEB)

    Park, Soojeong; Kim, Hyojin; Kim, Dojin [Chungnam National University, Daejeon (Korea, Republic of)

    2015-01-15

    We report the nitrogen-monoxide (NO) gas-sensing properties of transparent p-type copper-oxide (CuO) nanorod arrays synthesized by using the hydrothermal method with a CuO nanoparticle seed layer deposited on a glass substrate via sputtering process. We synthesized polycrystalline CuO nanorods measuring 200 to 300 nm in length and 20 to 30 nm in diameter for three controlled molarity ratios of 1:1, 1:2 and 1:4 between copper nitrate trihydrate [Cu(NO{sub 2}){sub 2}·3H{sub 2}O] and hexamethylenetetramine (C{sub 6}H{sub 12}N{sub 4}). The crystal structures and morphologies of the synthesized CuO nanorod arrays were examined using grazing incidence X-ray diffraction and scanning electron microscopy. The gas-sensing measurements for NO gas in dry air indicated that the CuO nanorodarray-based gas sensors synthesized under hydrothermal condition at a molarity ratio of 1:2 showed the best gas sensing response to NO gas. These CuO nanorod-array gas sensors exhibited a highly sensitive response to NO gas, with a maximum sensitivity of about 650% for 10 ppm NO in dry air at an operating temperature of 100 .deg. C. These transparent p-type CuO nanorod-array gas sensors have shown a reversible and reliable response to NO gas over a range of operating temperatures. These results indicate certain potential use of p-type oxide semiconductor CuO nanorods as sensing materials for several types of gas sensors, including p - n junction gas sensors.

  3. HOT GAS HALOS IN EARLY-TYPE FIELD GALAXIES

    International Nuclear Information System (INIS)

    Mulchaey, John S.; Jeltema, Tesla E.

    2010-01-01

    We use Chandra and XMM-Newton to study the hot gas content in a sample of field early-type galaxies. We find that the L X -L K relationship is steeper for field galaxies than for comparable galaxies in groups and clusters. The low hot gas content of field galaxies with L K ∼ * suggests that internal processes such as supernovae-driven winds or active galactic nucleus feedback expel hot gas from low-mass galaxies. Such mechanisms may be less effective in groups and clusters where the presence of an intragroup or intracluster medium can confine outflowing material. In addition, galaxies in groups and clusters may be able to accrete gas from the ambient medium. While there is a population of L K ∼ * galaxies in groups and clusters that retain hot gas halos, some galaxies in these rich environments, including brighter galaxies, are largely devoid of hot gas. In these cases, the hot gas halos have likely been removed via ram pressure stripping. This suggests a very complex interplay between the intragroup/intracluster medium and hot gas halos of galaxies in rich environments, with the ambient medium helping to confine or even enhance the halos in some cases and acting to remove gas in others. In contrast, the hot gas content of more isolated galaxies is largely a function of the mass of the galaxy, with more massive galaxies able to maintain their halos, while in lower mass systems the hot gas escapes in outflowing winds.

  4. Study on system for extracted type infrared gas analysis

    Science.gov (United States)

    Gu, Ruirui; Yao, Jun; Li, Wei; Li, Wenzhong; Zhang, Shaohua; Liu, Zhe; Wen, Qiang

    2015-12-01

    Based on the Beer-Lambert law and the characteristic IR absorption spectrum of CO, a system for extracted type infrared gas analysis has been designed and manufactured, which utilizes different absorptive degrees infrared light gain under different concentration degrees of the gas to be measured to the value of detect CO concentration, including optical path, electric circuit and gas path. A forward and backward gas detection chamber equipped with a micro flow sensor has been used in the optical path as well as a multistage high precision amplifier and filter circuit has been used in the electric circuit. The experimental results accord with the testing standard.

  5. Temperature Modulation with Specified Detection Point on Metal Oxide Semiconductor Gas Sensors for E-Nose Application

    Directory of Open Access Journals (Sweden)

    Arief SUDARMAJI

    2015-03-01

    Full Text Available Temperature modulation technique, some called dynamic measurement mode, on Metal-Oxide Semiconductor (MOS/MOX gas sensor has been widely observed and employed in many fields. We present its development, a Specified Detection Point (SDP on modulated sensing element of MOS sensor is applied which associated to its temperature modulation, temperature modulation-SDP so-named. We configured the rectangular modulation signal for MOS gas sensors (TGSs and FISs using PSOC CY8C28445-24PVXI (Programmable System on Chip which also functioned as acquisition unit and interface to a computer. Initial responses and selectivity evaluations were performed using statistical tool and Principal Component Analysis (PCA to differ sample gases (Toluene, Ethanol and Ammonia on dynamic chamber measurement under various frequencies (0.25 Hz, 1 Hz, 4 Hz and duty-cycles (25 %, 50 %, 75 %. We found that at lower frequency the response waveform of the sensors becomes more sloping and distinct, and selected modulations successfully increased the selectivity either on singular or array sensors rather than static temperature measurement.

  6. Ordered Mesoporous Tin Oxide Semiconductors with Large Pores and Crystallized Walls for High-Performance Gas Sensing.

    Science.gov (United States)

    Xiao, Xingyu; Liu, Liangliang; Ma, Junhao; Ren, Yuan; Cheng, Xiaowei; Zhu, Yongheng; Zhao, Dongyuan; Elzatahry, Ahmed A; Alghamdi, Abdulaziz; Deng, Yonghui

    2018-01-17

    Owing to their distinct chemical and physical properties, mesoporous metal oxide semiconductors have shown great application potential in catalysis, electrochemistry, energy conversion, and energy storage. In this study, mesoporous crystalline SnO 2 materials have been synthesized through an evaporation-induced co-assembly (EICA) method using poly(ethylene oxide)-b-polystyrene diblock copolymers as the template, tin chlorides as the tin sources, and tetrahydrofuran as the solvent. By controlling conditions of the co-assembly process and employing a carbon-supported thermal treatment strategy, highly ordered mesoporous SnO 2 materials with a hexagonal mesostructure (space group P6 3 /mmc) and crystalline pore walls can be obtained. The mesoporous SnO 2 is employed for fabricating gas sensor nanodevices which exhibit an excellent sensing performance toward H 2 S with high sensitivity (170, 50 ppm) and superior stability, owing to its high surface area (98 m 2 /g), well-connected mesopores of ca. 18.0 nm, and high density of active sites in the crystalline pore walls. The chemical mechanism study reveals that both SO 2 and SnS 2 are generated during the gas sensing process on the SnO 2 -based sensors.

  7. Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p -type amorphous oxide semiconductors

    Science.gov (United States)

    de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

    2018-01-01

    Amorphous semiconductors are usually characterized by a low charge carrier mobility, essentially related to their lack of long-range order. The development of such material with higher charge carrier mobility is hence challenging. Part of the issue comes from the difficulty encountered by first-principles simulations to evaluate concepts such as the electron effective mass for disordered systems since the absence of periodicity induced by the disorder precludes the use of common concepts derived from condensed matter physics. In this paper, we propose a methodology based on first-principles simulations that partially solves this problem, by quantifying the degree of delocalization of a wave function and of the connectivity between the atomic sites within this electronic state. We validate the robustness of the proposed formalism on crystalline and molecular systems and extend the insights gained to disordered/amorphous InGaZnO4 and Si. We also explore the properties of p -type oxide semiconductor candidates recently reported to have a low effective mass in their crystalline phases [G. Hautier et al., Nat. Commun. 4, 2292 (2013), 10.1038/ncomms3292]. Although in their amorphous phase none of the candidates present a valence band with delocalization properties matching those found in the conduction band of amorphous InGaZnO4, three of the seven analyzed materials show some potential. The most promising candidate, K2Sn2O3 , is expected to possess in its amorphous phase a slightly higher hole mobility than the electron mobility in amorphous silicon.

  8. Study of non-stoichiometric BaSrTiFeO3 oxide dedicated to semiconductor gas sensors

    International Nuclear Information System (INIS)

    Fasquelle, D.; Verbrugghe, N.; Deputier, S.

    2016-01-01

    Developing instrumentation systems compatible with the European RoHS directive (restriction of hazardous substances) to monitor our environment is of great interest for our society. Our research therefore aims at developing innovating integrated systems of detection dedicated to the characterization of various environmental exposures. These systems, which integrate new gas sensors containing lead-free oxides, are dedicated to the detection of flammable and toxic gases. We have firstly chosen to study semiconductor gas sensors implemented with lead-free oxides in view to develop RoHS devices. Therefore thick films deposited by spin-coating and screen-printing have been chosen for their robustness, ease to realize and ease to finally obtain cost-effective sensors. As crystalline defects and ionic vacancies are of great interest for gas detection, we have decided to study a non-stoichiometric composition of the BaSrTiFeO 3 sensible oxide. Nonstoichiometric BaSrTiFeO 3 lead-free oxide thick films were deposited by screen-printing on polycrystalline AFO 3 substrates covered by a layer of Ag-Pd acting as bottom electrode. The physical characterizations have revealed a crystalline structure mainly composed of BaTiO 3 pseudo-cubic phase and Ba 4 Ti 12 O 27 monoclinic phase for the powder, and a porous microstructure for the thick films. When compared to a BSTF thick film with a stoichiometric composition, a notable increase in the BSTF dielectric constant value was observed when taking into account of a similar microstructure and grain size. The loss tangent mean value varies more softly for the non-stoichiometric BaSrTiFeO 3 films than for the perovskite BSTF film as tanδ decreases from 0.45 to 0.04 when the frequency increases from 100 Hz to 1 MHz. (paper)

  9. Study of non-stoichiometric BaSrTiFeO3 oxide dedicated to semiconductor gas sensors

    Science.gov (United States)

    Fasquelle, D.; Verbrugghe, N.; Deputier, S.

    2016-11-01

    Developing instrumentation systems compatible with the European RoHS directive (restriction of hazardous substances) to monitor our environment is of great interest for our society. Our research therefore aims at developing innovating integrated systems of detection dedicated to the characterization of various environmental exposures. These systems, which integrate new gas sensors containing lead-free oxides, are dedicated to the detection of flammable and toxic gases. We have firstly chosen to study semiconductor gas sensors implemented with lead-free oxides in view to develop RoHS devices. Therefore thick films deposited by spin-coating and screen-printing have been chosen for their robustness, ease to realize and ease to finally obtain cost-effective sensors. As crystalline defects and ionic vacancies are of great interest for gas detection, we have decided to study a non-stoichiometric composition of the BaSrTiFeO3 sensible oxide. Nonstoichiometric BaSrTiFeO3 lead-free oxide thick films were deposited by screen-printing on polycrystalline AFO3 substrates covered by a layer of Ag-Pd acting as bottom electrode. The physical characterizations have revealed a crystalline structure mainly composed of BaTiO3 pseudo-cubic phase and Ba4Ti12O27 monoclinic phase for the powder, and a porous microstructure for the thick films. When compared to a BSTF thick film with a stoichiometric composition, a notable increase in the BSTF dielectric constant value was observed when taking into account of a similar microstructure and grain size. The loss tangent mean value varies more softly for the non-stoichiometric BaSrTiFeO3 films than for the perovskite BSTF film as tanδ decreases from 0.45 to 0.04 when the frequency increases from 100 Hz to 1 MHz.

  10. Energy spectrum of carriers in Kaner-type semiconductors in magnetic field of constant direction with trigonometric depending variation perpendicular to the field

    International Nuclear Information System (INIS)

    Babanly, A.M.; Babanly, A.M.; Huner, V.

    2010-01-01

    It was presented compact analytical solutions for the energy spectrum and wave functions of carriers in two-dimensional Kaner-type semiconductors in a magnetic field of constant direction with trigonometric depending variation perpendicular to the field direction

  11. Synthesis methods, microscopy characterization and device integration of nanoscale metal oxide semiconductors for gas sensing.

    Science.gov (United States)

    Vander Wal, Randy L; Berger, Gordon M; Kulis, Michael J; Hunter, Gary W; Xu, Jennifer C; Evans, Laura

    2009-01-01

    A comparison is made between SnO(2), ZnO, and TiO(2) single-crystal nanowires and SnO(2) polycrystalline nanofibers for gas sensing. Both nanostructures possess a one-dimensional morphology. Different synthesis methods are used to produce these materials: thermal evaporation-condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed. Practical issues associated with harvesting, purification, and integration of these materials into sensing devices are detailed. For comparison to the nascent form, these sensing materials are surface coated with Pd and Pt nanoparticles. Gas sensing tests, with respect to H(2), are conducted at ambient and elevated temperatures. Comparative normalized responses and time constants for the catalyst and noncatalyst systems provide a basis for identification of the superior metal-oxide nanostructure and catalyst combination. With temperature-dependent data, Arrhenius analyses are made to determine activation energies for the catalyst-assisted systems.

  12. A new type of a gas scintillating chamber

    International Nuclear Information System (INIS)

    Khoury, H.J.

    1981-01-01

    In a previous paper (H.J. Khoury - thesis - 1978) the author has described a new type of a gas scintillating chamber, in which the light emitted by excitation of the gas, due to the passage of a charged incoming particle, has its intensity increased by the action of an applied electric field. New experiments are described which contribute to a deeper understanding of the phenomena involved in the scintillating chamber due to the nature of the gas, the electric field and spatial distribution, etc.. The behaviour of the gas scintillation counter is studied both in the proportional region and in the region of limited proportionality. It is shown that by the use of a suitable gas mixture and applied electric field, the resolution of an alpha particle spectrum is considerably increased and values up to 0,9% can be attained. (Author) [pt

  13. P-type Semiconductor Materials for Photoelectrochemical and Photocatalytic Water Splitting

    Science.gov (United States)

    Jin, Zexun

    This thesis focuses on the preparation, characterization and applications of two kinds of p-type semiconductor materials: cuprous oxide (Cu2O) and tin hypothiodiphosphate (Sn2P2S6). In the first part, a highly active Cu2O photocathode was obtained using a facile wet-chemistry method. Furthermore, highly aligned Cu nanowire arrays coated with Cu2O as photocathodes were designed and fabricated. In the second part, Sn2P2S6 as a new visible-light-driven photocatalyst for hydrogen production from water was explored. In the first chapter, a highly photoactive Cu2O film was formed on Cu substrate via a novel wet-chemistry method based on a simple redox reaction between Cu and Cu2+. The Cu mesh/Cu2O photocathode exhibited excellent photoelectrochemical performance with a record high photocurrent of 4.8 mA cm-2 at 0 V vs. RHE under AM 1.5G simulated sunlight. Characterization by SEM and TEM revealed that the in-situ grown Cu2O crystals adhered firmly to the Cu substrate. After coating protective layers of Al:ZnO and TiO2, this Cu2O-based photocathode showed higher efficiency and stability toward PEC water splitting. Then Cu2O crystals were coated on highly aligned Cu nanowire arrays to construct a more efficient photocathode. The nanowire configuration is known to overcome the mismatch between the short carrier diffusion length and the long light absorption path of Cu2O. In addition, the conducting Cu inside the nanowires provides direct pathway for efficient charge transfer between Cu2O and substrate. As a result, this photocathode generated a larger photocurrent than that of planar configuration and conventional Cu 2O nanowires with many isolated fractures. In the third chapter, a new visible-light-driven photocatalyst Sn 2P2S6 was prepared through a mechanical ball milling process followed by a calcination step. The obtained Sn2P 2S6 nanoparticles were characterized by X-ray diffraction (XRD), X-Ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and

  14. Effective-mass approach for n-type semiconductor nanowire MOSFETs arbitrarily oriented

    International Nuclear Information System (INIS)

    Bescond, Marc; Cavassilas, Nicolas; Lannoo, Michel

    2007-01-01

    A method which calculates the effective masses in arbitrarily oriented semiconductor nanowires is presented. In order to avoid the full three-dimensional (3D) resolution of the Schroedinger equation, the method decouples within a Cartesian system the transport direction from the cross section. Results give the new effective mass expressions for each valley and channel orientation. As a direct application, transport in [100]-oriented Ge nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) is then studied by using a self-consistent 'mode-space' approach expressed in the nonequilibrium Green's function formalism. Along this wire orientation, we show that the effective masses resulting from our approach are very close to the one obtained using a sp 3 tight-binding band-structure calculation for nanowires as thin as 4 nm

  15. Effective-mass approach for n-type semiconductor nanowire MOSFETs arbitrarily oriented

    Energy Technology Data Exchange (ETDEWEB)

    Bescond, Marc [Institut de Microelectronique, Electromagnetisme et Photonique (IMEP, UMR CNRS 5130)-MINATEC, 3 Parvis Louis Neel, BP 257, F-38016 Grenoble Cedex 1 (France); Cavassilas, Nicolas [Laboratoire Materiaux et Microelectronique de Provence (L2MP, UMR CNRS 6137), Batiment IRPHE, 49 rue Joliot-Curie, BP 146, F-13384 Marseille Cedex 13 (France); Lannoo, Michel [Laboratoire Materiaux et Microelectronique de Provence (L2MP, UMR CNRS 6137), Batiment IRPHE, 49 rue Joliot-Curie, BP 146, F-13384 Marseille Cedex 13 (France)

    2007-06-27

    A method which calculates the effective masses in arbitrarily oriented semiconductor nanowires is presented. In order to avoid the full three-dimensional (3D) resolution of the Schroedinger equation, the method decouples within a Cartesian system the transport direction from the cross section. Results give the new effective mass expressions for each valley and channel orientation. As a direct application, transport in [100]-oriented Ge nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) is then studied by using a self-consistent 'mode-space' approach expressed in the nonequilibrium Green's function formalism. Along this wire orientation, we show that the effective masses resulting from our approach are very close to the one obtained using a sp{sup 3} tight-binding band-structure calculation for nanowires as thin as 4 nm.

  16. Dynamics of charge-transfer excitons in type-II semiconductor heterostructures

    Science.gov (United States)

    Stein, M.; Lammers, C.; Richter, P.-H.; Fuchs, C.; Stolz, W.; Koch, M.; Vänskä, O.; Weseloh, M. J.; Kira, M.; Koch, S. W.

    2018-03-01

    The formation, decay, and coherence properties of charge-transfer excitons in semiconductor heterostructures are investigated by applying four-wave-mixing and terahertz spectroscopy in combination with a predictive microscopic theory. A charge-transfer process is identified where the optically induced coherences decay directly into a charge-transfer electron-hole plasma and exciton states. It is shown that charge-transfer excitons are more sensitive to the fermionic electron-hole substructure than regular excitons.

  17. Effects of gas types and models on optimized gas fuelling station reservoir's pressure

    Directory of Open Access Journals (Sweden)

    M. Farzaneh-Gord

    2013-06-01

    Full Text Available There are similar algorithms and infrastructure for storing gas fuels at CNG (Compressed Natural Gas and CHG (Compressed Hydrogen Gas fuelling stations. In these stations, the fuels are usually stored in the cascade storage system to utilize the stations more efficiently. The cascade storage system generally divides into three reservoirs, commonly termed low, medium and high-pressure reservoirs. The pressures within these reservoirs have huge effects on performance of the stations. In the current study, based on the laws of thermodynamics, conservation of mass and real/ideal gas assumptions, a theoretical analysis has been constructed to study the effects of gas types and models on performance of the stations. It is intended to determine the optimized reservoir pressures for these stations. The results reveal that the optimized pressure differs between the gas types. For ideal and real gas models in both stations (CNG and CHG, the optimized non-dimensional low pressure-reservoir pressure is found to be 0.22. The optimized non-dimensional medium-pressure reservoir pressure is the same for the stations, and equal to 0.58.

  18. Thin-film antifuses for pellistor type gas sensors

    NARCIS (Netherlands)

    Kovalgin, Alexeij Y.; Holleman, J.; van den Berg, Albert; Wallinga, Hans

    2001-01-01

    This work extends our previously reported idea of using the nano-scale conductive link (antifuse) as a combined heating /detecting element in a Pellistor-type gas sensor. Our new thin-film antifuse is designed in such a way that the oxide, for minimising the bulk influence on surface temperature,

  19. Hydrodynamic fluctuations and light scattering in hot electron gas of semiconductors

    International Nuclear Information System (INIS)

    Zakhleniuk, N.A.; Kochelap, V.A.

    1991-10-01

    Hydrodynamical fluctuations of the electron gas are the low-frequency and long-range stochastic excitations over steady state of the system. These fluctuations are responsible for the set of the physical phenomena which occur for both equilibrium and nonequilibrium conditions (for example, the current noises, the light scattering, etc.). We investigate the hot electron plasma that can be characterized by two time parameters - the electric charge decay time τ M and the electron energy relaxation time τ T . Our consideration is based on the Boltzmann-Langevin kinetic equation for the fluctuations of the electron distribution function δF. The solution of this equation is found under typical criteria for the hot electron plasma: τ p much less than τ ee much less than τ e , where τ p , τ e are the times of relaxation of the momentum and energy of the electrons, τ ee is the electron-electron scattering time. It is shown that the fluctuation δF can be expressed via the two fluctuating parameters: δn(ω, q), δT(ω, q) and via the initial steady state distribution function. The fluctuating parameters δn and δT mean the fluctuations of the magnitudes of the electron density and temperature. For them the hydrodynamic equations are deduced and as a result, the following correlation functions are calculated: ω,q, ω,q , ω,q . The analysis of these correlators shows the next features of the general results which are not restricted by above criteria: i. There are cross-over correlations of δn and δT, that mean the mutual influence of the electron density fluctuations and their temperature. ii. The time and space dependences of the fluctuations strongly differ from that under the above mentioned limits. The above results are applied to the calculation of the light scattering by the electron plasma fluctuations. It is shown that the cross-correlation effect gives the essential contribution into the cross-section of the light scattering. 20 refs, 3 figs

  20. Pin-Type Gas Cooled Reactor for Nuclear Electric Propulsion

    Science.gov (United States)

    Wright, Steven A.; Lipinski, Ronald J.

    2003-01-01

    This paper describes a point design for a pin-type Gas-Cooled Reactor concept that uses a fuel pin design similar to the SP100 fuel pin. The Gas-Cooled Reactor is designed to operate at 100 kWe for 7 years plus have a reduced power mode of 20% power for a duration of 5 years. The power system uses a gas-cooled, UN-fueled, pin-type reactor to heat He/Xe gas that flows directly into a recuperated Brayton system to produce electricity. Heat is rejected to space via a thermal radiator that unfolds in space. The reactor contains approximately 154 kg of 93.15 % enriched UN in 313 fuel pins. The fuel is clad with rhenium-lined Nb-1Zr. The pressures vessel and ducting are cooled by the 900 K He/Xe gas inlet flow or by thermal radiation. This permits all pressure boundaries to be made of superalloy metals rather than refractory metals, which greatly reduces the cost and development schedule required by the project. The reactor contains sufficient rhenium (a neutron poison) to make the reactor subcritical under water immersion accidents without the use of internal shutdown rods. The mass of the reactor and reflectors is about 750 kg.

  1. An Imide-Based Pentacyclic Building Block for n-Type Organic Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Fu-Peng [Soochow Univ., Suzhou (China). Inst. of Functional Nano & Soft Materials (FUNSOM); Un, Hio-Ieng [Peking Univ., Beijing (China). Beijing National Lab. for Molecular Sciences, Key Lab. of Bioorganic Chemistry and Molecular Engineering of Ministry of Education, Key Lab. of Polymer Chemistry and Physics of Ministry of Education, Center for Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering; Li, Yongxi [Soochow Univ., Suzhou (China). Inst. of Functional Nano & Soft Materials (FUNSOM); Hu, Hailiang [Soochow Univ., Suzhou (China). Inst. of Functional Nano & Soft Materials (FUNSOM); Yuan, Yi [Soochow Univ., Suzhou (China). Inst. of Functional Nano & Soft Materials (FUNSOM); Yang, Bin [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Xiao, Kai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Chen, Wei [Argonne National Lab. (ANL), Lemont, IL (United States). Science Div.; Wang, Jie-Yu [Peking Univ., Beijing (China). Beijing National Lab. for Molecular Sciences, Key Lab. of Bioorganic Chemistry and Molecular Engineering of Ministry of Education, Key Lab. of Polymer Chemistry and Physics of Ministry of Education, Center for Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering; Jiang, Zuo-Quan [Soochow Univ., Suzhou (China). Inst. of Functional Nano & Soft Materials (FUNSOM); Pei, Jian [Peking Univ., Beijing (China). Beijing National Lab. for Molecular Sciences, Key Lab. of Bioorganic Chemistry and Molecular Engineering of Ministry of Education, Key Lab. of Polymer Chemistry and Physics of Ministry of Education, Center for Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering; Liao, Liang-Sheng [Soochow Univ., Suzhou (China). Inst. of Functional Nano & Soft Materials (FUNSOM)

    2017-10-09

    A new electron-deficient unit with fused 5-heterocyclic ring was developed by replacing a cyclopenta-1,3-diene from electron-rich donor indacenodithiophene (IDT) with cyclohepta- 4,6-diene-1,3-diimde unit. The imide bridging endows BBI with fixed planar configuration and both low the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbit (LUMO) energy levels. Organic field-effect transistors (OFETs) based on BBI polymers exhibit electron mobility up to 0.34 cm2 V-1 s-1, which indicates that the BBI is a promising ntype semiconductor for optoelectronics.

  2. Dilute moment n-type ferromagnetic semiconductor Li(Zn,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Mašek, Jan; Kudrnovský, Josef; Máca, František; Gallagher, B. L.; Campion, R. P.; Gregory, D.H.; Jungwirth, Tomáš

    2007-01-01

    Roč. 98, č. 6 (2007), 067202-067204 ISSN 0031-9007 R&D Projects: GA ČR GA202/05/0575; GA ČR GA202/04/0583; GA AV ČR IAA100100616; GA MŠk LC510; GA MŠk OC 150; GA ČR GEFON/06/E002 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z10100521 Keywords : feromagnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 6.944, year: 2007

  3. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  4. Practical Use of Metal Oxide Semiconductor Gas Sensors for Measuring Nitrogen Dioxide and Ozone in Urban Environments.

    Science.gov (United States)

    Peterson, Philip J D; Aujla, Amrita; Grant, Kirsty H; Brundle, Alex G; Thompson, Martin R; Vande Hey, Josh; Leigh, Roland J

    2017-07-19

    The potential of inexpensive Metal Oxide Semiconductor (MOS) gas sensors to be used for urban air quality monitoring has been the topic of increasing interest in the last decade. This paper discusses some of the lessons of three years of experience working with such sensors on a novel instrument platform (Small Open General purpose Sensor (SOGS)) in the measurement of atmospheric nitrogen dioxide and ozone concentrations. Analytic methods for increasing long-term accuracy of measurements are discussed, which permit nitrogen dioxide measurements with 95% confidence intervals of 20.0 μ g m - 3 and ozone precision of 26.8 μ g m - 3 , for measurements over a period one month away from calibration, averaged over 18 months of such calibrations. Beyond four months from calibration, sensor drift becomes significant, and accuracy is significantly reduced. Successful calibration schemes are discussed with the use of controlled artificial atmospheres complementing deployment on a reference weather station exposed to the elements. Manufacturing variation in the attributes of individual sensors are examined, an experiment possible due to the instrument being equipped with pairs of sensors of the same kind. Good repeatability (better than 0.7 correlation) between individual sensor elements is shown. The results from sensors that used fans to push air past an internal sensor element are compared with mounting the sensors on the outside of the enclosure, the latter design increasing effective integration time to more than a day. Finally, possible paths forward are suggested for improving the reliability of this promising sensor technology for measuring pollution in an urban environment.

  5. Practical Use of Metal Oxide Semiconductor Gas Sensors for Measuring Nitrogen Dioxide and Ozone in Urban Environments

    Directory of Open Access Journals (Sweden)

    Philip J. D. Peterson

    2017-07-01

    Full Text Available The potential of inexpensive Metal Oxide Semiconductor (MOS gas sensors to be used for urban air quality monitoring has been the topic of increasing interest in the last decade. This paper discusses some of the lessons of three years of experience working with such sensors on a novel instrument platform (Small Open General purpose Sensor (SOGS in the measurement of atmospheric nitrogen dioxide and ozone concentrations. Analytic methods for increasing long-term accuracy of measurements are discussed, which permit nitrogen dioxide measurements with 95% confidence intervals of 20.0 μ g m − 3 and ozone precision of 26.8 μ g m − 3 , for measurements over a period one month away from calibration, averaged over 18 months of such calibrations. Beyond four months from calibration, sensor drift becomes significant, and accuracy is significantly reduced. Successful calibration schemes are discussed with the use of controlled artificial atmospheres complementing deployment on a reference weather station exposed to the elements. Manufacturing variation in the attributes of individual sensors are examined, an experiment possible due to the instrument being equipped with pairs of sensors of the same kind. Good repeatability (better than 0.7 correlation between individual sensor elements is shown. The results from sensors that used fans to push air past an internal sensor element are compared with mounting the sensors on the outside of the enclosure, the latter design increasing effective integration time to more than a day. Finally, possible paths forward are suggested for improving the reliability of this promising sensor technology for measuring pollution in an urban environment.

  6. Fast detoxication of 2-chloro ethyl ethyl sulfide by p-type Ag2O semiconductor nanoparticle-loaded Al2O3-based supports

    International Nuclear Information System (INIS)

    Ma, Meng-Wei; Kuo, Dong-Hau

    2016-01-01

    Highlights: • Detoxication of CWA surrogate of 2-chloro ethyl ethyl sulfide is investigated. • A small amount of Ag 2 O on Al 2 O 3 -base support is sufficient to degrade 2-CEES. • Detoxication conversion >82% in 15 min is achieved for >2.5% Ag 2 O/Na 2 SiO 3 /Al 2 O 3 . • Na 2 SiO 3 modified Al 2 O 3 to have the valley-like line pattern for depositing Ag 2 O. • 2-CEES oxidation is initiated from the dominant electronic holes in p-type Ag 2 O. - Abstract: p-type Ag 2 O semiconductor nanoparticle-loaded Al 2 O 3 or Na 2 SiO 3 /Al 2 O 3 powders used for detoxicating the surrogate of sulfur mustard of 2-chloro ethyl ethyl sulfide (C 2 H 5 SCH 2 CH 2 Cl, 2-CEES) were investigated. Different amounts of Ag 2 O and Na 2 SiO 3 on catalyst supports were evaluated. Gas chromatography with a pulsed flame photometric detector (GC–PFPD) and gas chromatography coupled with a mass spectroscopy (GC–MS) were used to monitor and identify the catalytic reactions, together with reaction products analysis. The GC analyses showed that the decontamination of 2-CEES in isopropanol solvent for 15 min was above 82% efficiency for the 0.5% Na 2 SiO 3 /Al 2 O 3 support deposited with a Ag 2 O content above 2.5%. 2-(ethylthio)ethanol and 2-(ethylthio)ethanoic acid were identified as the major products after catalytic reactions. The electronic holes dominating in p-type Ag 2 O is proposed to provide the key component and to initiate the catalytic reactions. The electronic hole-based detoxication mechanism is proposed.

  7. Study of various n-type organic semiconductors on ultraviolet detective and electroluminescent properties of optoelectronic integrated device

    Science.gov (United States)

    Deng, Chaoxu; Shao, Bingyao; Zhao, Dan; Zhou, Dianli; Yu, Junsheng

    2017-11-01

    Organic optoelectronic integrated device (OID) with both ultraviolet (UV) detective and electroluminescent (EL) properties was fabricated by using a thermally activated delayed fluorescence (TADF) semiconductor of (4s, 6s)-2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile (4CzIPN) as an emitter. The effect of five kinds of n-type organic semiconductors (OSCs) on the enhancement of UV detective and EL properties of OID was systematically studied. The result shows that two orders of magnitude in UV detectivity from 109 to 1011 Jones and 3.3 folds of luminance from 2499 to 8233 cd m‑2 could be achieved. The result shows that not only the difference of lowest unoccupied molecular orbital (LUMO) between active layer and OSC but also the variety of electron mobility have a significant effect on the UV detective and EL performance through adjusting electron injection/transport. Additionally, the optimized OSC thickness is beneficial to confine the leaking of holes from the active layer to cathode, leading to the decrease of dark current for high detective performance. This work provides a useful method on broadening OSC material selection and device architecture construction for the realization of high performance OID.

  8. Liquid-metal-gas heat exchanger for HTGR type reactors

    International Nuclear Information System (INIS)

    Werth, G.

    1980-01-01

    The aim of this study is to investigate the heat transfer characteristics of a liquid metal heat exchanger (HE) for a helium-cooled high temperature reactor. A tube-type heat exchanger is considered as well as two direct exchangers: a bubble-type heat exchanger and a heat exchanger according to the spray principle. Experiments are made in order to determine the gas content of bubble-type heat exchangers, the dependence of the droplet diameter on the nozzle diameter, the falling speed of the droplets, the velocity of the liquid jet, and the temperature variation of liquid jets. The computer codes developed for HE calculation are structured so that they may be used for gas/liquid HE, too. Each type of HE that is dealt with is designed by accousting for a technical and an economic assessment. The liquid-lead jet spray is preferred to all other types because of its small space occupied and its simple design. It shall be used in near future in the HTR by the name of lead/helium HE. (GL) [de

  9. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  10. Effect of channel orientation in p-type nanowire Schottky barrier metal-oxide-semiconductor field-effect transistors

    Science.gov (United States)

    Shin, Mincheol

    2010-08-01

    Device performance of p-type nanowire Schotty barrier metal-oxide-semiconductor field-effect transistors is investigated focusing on the channel orientation effects. A rigorous quantum-mechanical calculation of hole current based on the multiband k ṡp method is carried out. The [111] oriented devices show the most superior performance, in terms of subthreshold slope, threshold voltage variation, and on-current. In particular, on-current in the [111] oriented devices is about twice as large as that in the [100] oriented devices. Tunneling effective mass, quantization energy, and Schottky barrier thickness are examined as the major factors that influence on the orientation-dependent current injection into the channel.

  11. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  12. The physics and applications of amorphous semiconductors

    CERN Document Server

    Madan, Arun

    1988-01-01

    This comprehensive, detailed treatise on the physics and applications of the new emerging technology of amorphous semiconductors focuses on specific device research problems such as the optimization of device performance. The first part of the book presents hydrogenated amorphous silicon type alloys, whose applications include inexpensive solar cells, thin film transistors, image scanners, electrophotography, optical recording and gas sensors. The second part of the book discusses amorphous chalcogenides, whose applications include electrophotography, switching, and memory elements. This boo

  13. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  14. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    Science.gov (United States)

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement.

  15. Configurational rearrangements of bistable centers in covalent semiconductors - phase transitions of the second type

    International Nuclear Information System (INIS)

    Ivanyukovich, V.A.; Karas', V.I.; Lomako, V.M.

    1989-01-01

    A new radiation configurational-bistable defect diffring from the known similar defects by the fact that it possessestemperature inversion of states is detected in gallium arsenide. Configurational-bistable rearrangements are shown to be considered as phase transitions of the second type

  16. Description of the magnox type of gas cooled reactor (MAGNOX)

    International Nuclear Information System (INIS)

    Jensen, S.E.; Nonboel, E.

    1999-05-01

    The present report comprises a technical description of the MAGNOX type of reactor as it has been build in Great Britain. The Magnox reactor is gas cooled (CO 2 ) with graphite moderators. The fuels is natural uranium in metallic form, canned with a magnesium alloy called 'Magnox'. The Calder Hall Magnox plant on the Lothian coastline of Scotland, 60 km east of Edinburgh, has been chosen as the reference plant and is described in some detail. Data on the other stations are given in tables with a summary of design data. Special design features are also shortly described. Where specific data for Calder Hall Magnox has not been available, corresponding data from other Magnox plants has been used. The information presented is based on the open literature. The report is written as a part of the NKS/RAK-2 sub-project 3: 'Reactors in Nordic Surroundings', which comprises a description of nuclear power plants neighbouring the Nordic countries. (au)

  17. Rhodium-doped barium titanate perovskite as a stable p-type semiconductor photocatalyst for hydrogen evolution under visible light.

    Science.gov (United States)

    Maeda, Kazuhiko

    2014-02-12

    Rhodium-doped barium titanate (BaTiO3:Rh) powder was prepared by the polymerized complex (PC) method, and the photocatalytic activity for H2 evolution from water was examined. BaTiO3 is a wide-gap n-type semiconductor having a band gap of 3.0 eV. Doping Rh species into the lattice of BaTiO3 resulted in the formation of new absorption bands in visible light region. Upon visible light (λ > 420 nm), BaTiO3:Rh modified with nanoparticulate Pt as a water reduction promoter was capable of producing H2 from water containing an electron donor such as methanol and iodide. The best material prepared by the PC method exhibited higher activity than that made by a conventional solid-state reaction method. Visible-light-driven Z-scheme water splitting was also accomplished using Pt/BaTiO3:Rh as a building block for H2 evolution in combination with PtOx-loaded WO3 as an O2 evolution photocatalyst in the presence of an IO3(-)/I(-) shuttle redox mediator. Photoelectrochemical analysis indicated that a porous BaTiO3:Rh electrode exhibited cathodic photoresponse due to water reduction in a neutral aqueous Na2SO4 solution upon visible light.

  18. Electron mobilities of n-type organic semiconductors from time-dependent wavepacket diffusion method: pentacenequinone derivatives.

    Science.gov (United States)

    Zhang, WeiWei; Zhong, XinXin; Zhao, Yi

    2012-11-26

    The electron mobilities of two n-type pentacenequinone derivative organic semiconductors, 5,7,12,14-tetraaza-6,13-pentacenequinone (TAPQ5) and 1,4,8,11-tetraaza-6,13-pentacenequinone (TAPQ7), are investigated with use of the methods of electronic structure and quantum dynamics. The electronic structure calculations reveal that the two key parameters for the control of electron transfer, reorganization energy and electronic coupling, are similar for these two isomerization systems, and the charge carriers essentially display one-dimensional transport properties. The mobilities are then calculated by using the time-dependent wavepacket diffusion approach in which the dynamic fluctuations of the electronic couplings are incorporated via their correlation functions obtained from molecular dynamics simulations. The predicted mobility of TAPQ7 crystal is about six times larger than that of TAPQ5 crystal. Most interestingly, Fermi's golden rule predicts the mobilities very close to those from the time-dependent wavepacket diffusion method, even though the electronic couplings are explicitly large enough to make the perturbation theory invalid. The possible reason is analyzed from the dynamic fluctuations.

  19. Properties of n-type SnO2 semiconductor prepared by spray ultrasonic technique for photovoltaic applications

    Science.gov (United States)

    Bendjedidi, H.; Attaf, A.; Saidi, H.; Aida, M. S.; Semmari, S.; Bouhdjar, A.; Benkhetta, Y.

    2015-12-01

    Transparent conducting n-type SnO2 semiconductor films were fabricated by employing an inexpensive, simplified spray ultrasonic technique using an ultrasonic generator at deferent substrate temperatures (300, 350, 400, 450 and 500 °C). The structural studies reveal that the SnO2 films are polycrystalline at 350, 400, 450, 500 °C with preferential orientation along the (200) and (101) planes, and amorphous at 300 °C. The crystallite size of the films was found to be in the range of 20.9-72.2 nm. The optical transmittance in the visible range and the optical band gap are 80% and 3.9 eV respectively. The films thicknesses were varied between 466 and 1840 nm. The resistivity was found between 1.6 and 4 × 10-2 Ω·cm. This simplified ultrasonic spray technique may be considered as a promising alternative to a conventional spray for the massive production of economic SnO2 films for solar cells, sensors and opto-electronic applications.

  20. Designing small molecule polyaromatic p- and n-type semiconductor materials for organic electronics

    KAUST Repository

    Collis, Gavin E.

    2015-12-22

    By combining computational aided design with synthetic chemistry, we are able to identify core 2D polyaromatic small molecule templates with the necessary optoelectronic properties for p- and n-type materials. By judicious selection of the functional groups, we can tune the physical properties of the material making them amenable to solution and vacuum deposition. In addition to solubility, we observe that the functional group can influence the thin film molecular packing. By developing structure-property relationships (SPRs) for these families of compounds we observe that some compounds are better suited for use in organic solar cells, while others, varying only slightly in structure, are favoured in organic field effect transistor devices. We also find that the processing conditions can have a dramatic impact on molecular packing (i.e. 1D vs 2D polymorphism) and charge mobility; this has implications for material and device long term stability. We have developed small molecule p- and n-type materials for organic solar cells with efficiencies exceeding 2%. Subtle variations in the functional groups of these materials produces p- and ntype materials with mobilities higher than 0.3 cm2/Vs. We are also interested in using our SPR approach to develop materials for sensor and bioelectronic applications.

  1. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas.

    Science.gov (United States)

    Zhang, Kexiong; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Sang, Liwen

    2016-03-29

    The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a drain-source current density of 0.51 mA/mm at the gate voltage of -2 V and drain bias of -15 V, an ON/OFF ratio of two orders of magnitude and effective hole mobility of 10 cm(2)/Vs at room temperature. The normal operation of MOSFET without freeze-out at 8 K further proves that the p-channel behavior is originated from the polarization-induced 2DHG.

  2. Composition, Microstructure, and Electrical Performance of Sputtered SnO Thin Films for p-Type Oxide Semiconductor.

    Science.gov (United States)

    Lee, Seung Jun; Jang, Younjin; Kim, Han Joon; Hwang, Eun Suk; Jeon, Seok Min; Kim, Jun Shik; Moon, Taehwan; Jang, Kyung-Tae; Joo, Young-Chang; Cho, Deok-Yong; Hwang, Cheol Seong

    2018-01-31

    p-Type SnO thin films were deposited on a Si substrate by a cosputtering process using ceramic SnO and metal Sn targets at room temperature without adding oxygen. By varying the dc sputtering power applied to the Sn target while maintaining a constant radio frequency power to the SnO target, the Sn/O ratio varied from 56:44 to 74:26 at the as-deposited state. After thermal annealing at 180 °C for 25 min under air atmosphere using a microwave annealing system, the films were crystallized into tetragonal SnO when the Sn/O ratio increased from 44:56 to 57:43. Notably, the metallic Sn remained when the Sn/O ratio was higher than 55:45 at an annealed state. When the ratio was lower than 55:45 at the annealed state, the incorporated Sn fully oxidized to SnO, making the films useful p-type semiconductors, whereas the films became metallic conductors at higher Sn/O ratios. At the Sn/O ratio of 55:45 at the annealed state, the film showed the highest Hall mobility of 8.8 cm 2 V -1 s -1 and a hole concentration of 5.4 × 10 18 cm -3 . Interestingly, the electrical conduction behavior showed trap-mediated hopping when the Sn metal was cosputtered, whereas the single SnO film showed regular band conduction behavior. The residual stress effect could interpret such property variation originated from the sputtering power and postoxidation-induced volumetric effects. This report makes a critical contribution to the in-depth understanding of the composition-structure-property relationship of this technically important thin film material.

  3. Description of the advanced gas cooled type of reactor (AGR)

    International Nuclear Information System (INIS)

    Nonboel, E.

    1996-11-01

    The present report comprises a technical description of the Advanced Gas cooled Reactor (AGR), a reactor type which has only been built in Great Britain. 14 AGR reactors have been built, located at 6 different sites and each station is supplied with twin-reactors. The Torness AGR plant on the Lothian coastline of Scotland, 60 km east of Edinburgh, has been chosen as the reference plant and is described in some detail. Data on the other 6 stations, Dungeness B, Hinkely Point B, Hunterston G, Hartlepool, Heysham I and Heysham II, are given only in tables with a summary of design data. Where specific data for Torness AGR has not been available, corresponding data from other AGR plans has been used, primarily from Heysham II, which belongs to the same generation of AGR reactors. The information presented is based on the open literature. The report is written as a part of the NKS/RAK-2 subproject 3: 'Reactors in Nordic Surroundings', which comprises a description of nuclear power plants neighbouring the Nordic countries. (au) 11 refs

  4. Using greenhouse gas fluxes to define soil functional types

    Energy Technology Data Exchange (ETDEWEB)

    Petrakis, Sandra; Barba, Josep; Bond-Lamberty, Ben; Vargas, Rodrigo

    2017-12-04

    Soils provide key ecosystem services and directly control ecosystem functions; thus, there is a need to define the reference state of soil functionality. Most common functional classifications of ecosystems are vegetation-centered and neglect soil characteristics and processes. We propose Soil Functional Types (SFTs) as a conceptual approach to represent and describe the functionality of soils based on characteristics of their greenhouse gas (GHG) flux dynamics. We used automated measurements of CO2, CH4 and N2O in a forested area to define SFTs following a simple statistical framework. This study supports the hypothesis that SFTs provide additional insights on the spatial variability of soil functionality beyond information represented by commonly measured soil parameters (e.g., soil moisture, soil temperature, litter biomass). We discuss the implications of this framework at the plot-scale and the potential of this approach at larger scales. This approach is a first step to provide a framework to define SFTs, but a community effort is necessary to harmonize any global classification for soil functionality. A global application of the proposed SFT framework will only be possible if there is a community-wide effort to share data and create a global database of GHG emissions from soils.

  5. Visible photoassisted room-temperature oxidizing gas-sensing behavior of Sn2S3 semiconductor sheets through facile thermal annealing

    Science.gov (United States)

    Liang, Yuan-Chang; Lung, Tsai-Wen; Wang, Chein-Chung

    2016-11-01

    Well-crystallized Sn2S3 semiconductor thin films with a highly (111)-crystallographic orientation were grown using RF sputtering. The surface morphology of the Sn2S3 thin films exhibited a sheet-like feature. The Sn2S3 crystallites with a sheet-like surface had a sharp periphery with a thickness in a nanoscale size, and the crystallite size ranged from approximately 150 to 300 nm. Postannealing the as-synthesized Sn2S3 thin films further in ambient air at 400 °C engendered roughened and oxidized surfaces on the Sn2S3 thin films. Transmission electron microscopy analysis revealed that the surfaces of the Sn2S3 thin films transformed into a SnO2 phase, and well-layered Sn2S3-SnO2 heterostructure thin films were thus formed. The Sn2S3-SnO2 heterostructure thin film exhibited a visible photoassisted room-temperature gas-sensing behavior toward low concentrations of NO2 gases (0.2-2.5 ppm). By contrast, the pure Sn2S3 thin film exhibited an unapparent room-temperature NO2 gas-sensing behavior under illumination. The suitable band alignment at the interface of the Sn2S3-SnO2 heterostructure thin film and rough surface features might explain the visible photoassisted room-temperature NO2 gas-sensing responses of the heterostructure thin film on exposure to NO2 gas at low concentrations in this work.

  6. Future Trend of Non-Volatile Semiconductor Memory and Feasibility Study of BiCS Type Stacked Structure

    OpenAIRE

    渡辺, 重佳

    2009-01-01

    Future trend of non-volatile semiconductor memory—FeRAM, MRAM, PRAM, ReRAM—compared with NAND typeflash memory has been described based on its history, application and performance. In the realistic point of view,FeRAM and MRAM are suitable for embedded memory and main memory, and PRAM and ReRAM are promising candidatesfor main memory and mass-storage memory for multimedia. Furthermore, the feasibility study of aggressiveultra-low-cost high-speed universal non-volatile semiconductor memory has...

  7. Amorphous Semiconductor Alloys

    Science.gov (United States)

    Madan, Arun

    1985-08-01

    Amorphous silicon (a-Si) based alloys have attracted a considerable amount of interest because of their applications in a wide variety of technologies. However, the major effort has concentrated on inexpensive photovoltaic device applications and has moved from a laboratory curiosity in the early 1970's to viable commercial applications in the 1980's. Impressive progress in this field has been made since the group at University of Dundee demonstrated that a low defect, device quality hydrogenated amorphous silicon (a-Si:H) 12 material could be produced using the radio frequency (r.f.) glow discharge in SiH4 gas ' and that the material could be doped n- and p-type.3 These results spurred a worldwide interest in a-Si based alloys, especially for photovoltaic devices which has resulted in a conversion efficiency approaching 12%. There is now a quest for even higher conversion efficiencies by using the multijunction cell approach. This necessitates the synthesis of new materials of differing bandgaps, which in principle amorphous semiconductors can achieve. In this article, we review some of this work and consider from a device and a materials point of view the hurdles which have to be overcome before this type of concept can be realized.

  8. Spatial separation of electrons and holes for enhancing the gas-sensing property of a semiconductor: ZnO/ZnSnO3 nanorod arrays prepared by a hetero-epitaxial growth

    Science.gov (United States)

    Wang, Ying; Gao, Peng; Sha, Linna; Chi, Qianqian; Yang, Lei; Zhang, Jianjiao; Chen, Yujin; Zhang, Milin

    2018-04-01

    The construction of semiconductor composites is known as a powerful method used to realize the spatial separation of electrons and the holes in them, which can result in more electrons or holes and increase the dispersion of oxygen ions ({{{{O}}}2}- and O - ) (one of the most critical factors for their gas-sensing properties) on the surface of the semiconductor gas sensor. In this work, using 1D ZnO/ZnSnO3 nanoarrays as an example, which are prepared through a hetero-epitaxial growing process to construct a chemically bonded interface, the above strategy to attain a better semiconductor gas-sensing property has been realized. Compared with single ZnSnO3 nanotubes and no-matching ZnO/ZnSnO3 nanoarrays gas sensors, it has been proven by x-ray photoelectron spectroscopy and photoluminescence spectrum examination that the as-obtained ZnO/ZnSnO3 sensor showed a greatly increased quantity of active surface electrons with exceptional responses to trace target gases and much lower optimum working temperatures (less than about 170 °C). For example, the as-obtained ZnO/ZnSnO3 sensor exhibited an obvious response and short response/recovery time (less than 10 s) towards trace H2S gas (a detection limit down to 700 ppb). The high responses and dynamic repeatability observed in these sensors reveal that the strategy based on the as-presented electron and hole separation is reliable for improving the gas-sensing properties of semiconductors.

  9. 2,6-Bis(benzo[b]thiophen-2-yl-3,7-dipentadecyltetrathienoacene (DBT-TTAR2 as an Alternative of Highly Soluble p-type Organic Semiconductor for Organic Thin Film Transistor (OTFT Application

    Directory of Open Access Journals (Sweden)

    Mery B. Supriadi

    2013-03-01

    Full Text Available A new compound of organic semiconductor based on tetrathienoacene (TTA derivatives, DBT-TTAR2 was synthesized and characterized. The corporation of dibenzo[b,d]thiophene (DBT group and alkyl substituent in both ends of TTA core have a significant effect on their π-π molecular conjugation length, energy gaps value and solubility properties. DBT-TTAR2 is fabricated as p-type organic semiconductor of organic thin film transistor (OTFT by solution process at Industrial Technology Research Institute, Taiwan. A good optical, electrochemical, and thermal properties of DBT-TTAR2 showed that its exhibits a better performance as highly soluble p-type organic semiconductor.

  10. Basic Semiconductor Physics

    CERN Document Server

    Hamaguchi, Chihiro

    2010-01-01

    This book presents a detailed description of the basic semiconductor physics. The reader is assumed to have a basic command of mathematics and some elementary knowledge of solid state physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. The reader can understand three different methods of energy band calculations, empirical pseudo-potential, k.p perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for full band Monte Carlo simulation are discussed. Experiments and theoretical analysis of cyclotron resonance are discussed in detail because the results are essential to the understanding of semiconductor physics. Optical and transport properties, magneto-transport, two dimensional electron gas transport (HEMT and MOSFET), and quantum transport are reviewed, explaining optical transition, electron phonon interactions, electron mob...

  11. All-vapor processing of P-type tellurium-containing II-VI semiconductor and ohmic contacts thereof

    Energy Technology Data Exchange (ETDEWEB)

    McCandless, Brian E.

    2000-03-01

    An all dry method for producing solar cells is provided comprising first heat-annealing a II-VI semiconductor; enhancing the conductivity and grain size of the annealed layer; modifying the surface and depositing a tellurium layer onto the enhanced layer; and then depositing copper onto the tellurium layer so as to produce a copper tellurium compound on the layer.

  12. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  13. Synthesis Methods, Microscopy Characterization and Device Integration of Nanoscale Metal Oxide Semiconductors for Gas Sensing in Aerospace Applications

    Science.gov (United States)

    VanderWal, Randy L.; Berger, Gordon M.; Kulis, Michael J.; Hunter, Gary W.; Xu, Jennifer C.; Evans, Laura J.

    2009-01-01

    A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. Both nanostructures possess a one-dimensional morphology. Different synthesis methods are used to produce these materials: thermal evaporation-condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed. Practical issues associated with harvesting, purification, and integration of these materials into sensing devices are detailed. For comparison to the nascent form, these sensing materials are surface coated with Pd and Pt nanoparticles. Gas sensing tests, with respect to H2, are conducted at ambient and elevated temperatures. Comparative normalized responses and time constants for the catalyst and noncatalyst systems provide a basis for identification of the superior metal-oxide nanostructure and catalyst combination. With temperature-dependent data, Arrhenius analyses are made to determine an activation energy for the catalyst-assisted systems.

  14. Macroporous Semiconductors

    Directory of Open Access Journals (Sweden)

    Helmut Föll

    2010-05-01

    Full Text Available Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed.

  15. Semiconductor heterojunctions

    CERN Document Server

    Sharma, B L

    1974-01-01

    Semiconductor Heterojunctions investigates various aspects of semiconductor heterojunctions. Topics covered include the theory of heterojunctions and their energy band profiles, electrical and optoelectronic properties, and methods of preparation. A number of heterojunction devices are also considered, from photovoltaic converters to photodiodes, transistors, and injection lasers.Comprised of eight chapters, this volume begins with an overview of the theory of heterojunctions and a discussion on abrupt isotype and anisotype heterojunctions, along with graded heterojunctions. The reader is then

  16. A New Tree-Type Fracturing Method for Stimulating Coal Seam Gas Reservoirs

    Directory of Open Access Journals (Sweden)

    Qian Li

    2017-09-01

    Full Text Available Hydraulic fracturing is used widely to stimulate coalbed methane production in coal mines. However, some factors associated with conventional hydraulic fracturing, such as the simple morphology of the fractures it generates and inhomogeneous stress relief, limit its scope of application in coal mines. These problems mean that gas extraction efficiency is low. Conventional fracturing may leave hidden pockets of gas, which will be safety hazards for subsequent coal mining operations. Based on a new drilling technique applicable to drilling boreholes in coal seams, this paper proposes a tree-type fracturing technique for stimulating reservoir volumes. Tree-type fracturing simulation experiments using a large-scale triaxial testing apparatus were conducted in the laboratory. In contrast to the single hole drilled for conventional hydraulic fracturing, the tree-type sub-boreholes induce radial and tangential fractures that form complex fracture networks. These fracture networks can eliminate the “blank area” that may host dangerous gas pockets. Gas seepage in tree-type fractures was analyzed, and gas seepage tests after tree-type fracturing showed that permeability was greatly enhanced. The equipment developed for tree-type fracturing was tested in the Fengchun underground coal mine in China. After implementing tree-type fracturing, the gas extraction rate was around 2.3 times greater than that for traditional fracturing, and the extraction rate remained high for a long time during a 30-day test. This shortened the gas drainage time and improved gas extraction efficiency.

  17. Three types of gas hydrate reservoirs in the Gulf of Mexico identified in LWD data

    Science.gov (United States)

    Lee, Myung Woong; Collett, Timothy S.

    2011-01-01

    High quality logging-while-drilling (LWD) well logs were acquired in seven wells drilled during the Gulf of Mexico Gas Hydrate Joint Industry Project Leg II in the spring of 2009. These data help to identify three distinct types of gas hydrate reservoirs: isotropic reservoirs in sands, vertical fractured reservoirs in shale, and horizontally layered reservoirs in silty shale. In general, most gas hydratebearing sand reservoirs exhibit isotropic elastic velocities and formation resistivities, and gas hydrate saturations estimated from the P-wave velocity agree well with those from the resistivity. However, in highly gas hydrate-saturated sands, resistivity-derived gas hydrate-saturation estimates appear to be systematically higher by about 5% over those estimated by P-wave velocity, possibly because of the uncertainty associated with the consolidation state of gas hydrate-bearing sands. Small quantities of gas hydrate were observed in vertical fractures in shale. These occurrences are characterized by high formation resistivities with P-wave velocities close to those of water-saturated sediment. Because the formation factor varies significantly with respect to the gas hydrate saturation for vertical fractures at low saturations, an isotropic analysis of formation factor highly overestimates the gas hydrate saturation. Small quantities of gas hydrate in horizontal layers in shale are characterized by moderate increase in P-wave velocities and formation resistivities and either measurement can be used to estimate gas hydrate saturations.

  18. Reactive codoping of GaAlInP compound semiconductors

    Science.gov (United States)

    Hanna, Mark Cooper [Boulder, CO; Reedy, Robert [Golden, CO

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  19. Separation of Gas Mixtures by New Type of Membranes – Dynamic Liquid Membranes.

    OpenAIRE

    Setničková, K. (Kateřina); Šíma, V. (Vladimír); Petričkovič, R. (Roman); Řezníčková Čermáková, J. (Jiřina); Uchytil, P. (Petr)

    2016-01-01

    The selectivity and permeability of membrane material determines the efficiency of the gas separation process. To prepare a stable high selective and high permeable membrane and, in addition, also cheap, is the dream of most scientists dealing with the membrane technology. We proposed to investigate the gas separation by a completely new type of membranes possessing both; high selectivity and high gas permeability. Our preliminary results are very promising. We are able to prepare a very chea...

  20. Semiconductor electrochemistry

    CERN Document Server

    Memming, Rüdiger

    2015-01-01

    Providing both an introduction and an up-to-date survey of the entire field, this text captivates the reader with its clear style and inspiring, yet solid presentation. The significantly expanded second edition of this milestone work is supplemented by a completely new chapter on the hot topic of nanoparticles and includes the latest insights into the deposition of dye layers on semiconductor electrodes. In his monograph, the acknowledged expert Professor Memming primarily addresses physical and electrochemists, but materials scientists, physicists, and engineers dealing with semiconductor technology and its applications will also benefit greatly from the contents.

  1. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  2. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  3. Are greenhouse gas emissions from international shipping a type of marine pollution?

    Science.gov (United States)

    Shi, Yubing

    2016-12-15

    Whether greenhouse gas emissions from international shipping are a type of marine pollution is a controversial issue and is currently open to debate. This article examines the current treaty definitions of marine pollution, and applies them to greenhouse gas emissions from ships. Based on the legal analysis of treaty definitions and relevant international and national regulation on this issue, this article asserts that greenhouse gas emissions from international shipping are a type of 'conditional' marine pollution. Copyright © 2016 Elsevier Ltd. All rights reserved.

  4. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  5. Development of bremsstrahlung detection type tritium gas monitoring system, (1)

    International Nuclear Information System (INIS)

    Bingo, Kazuyoshi; Yoshida, Makoto; Chida, Tohru; Kawasaki, Katsuya

    1982-11-01

    A tritium monitoring system by means of bremsstrahlung detecting was developed. A prototype system consisted of a sampling cylinder, a gas circulating apparatus, an NaI(T1) detector, an amplifier and a multichannel analyzer. The sizes of sampling cylinders used 208 mm phi x 290; 170; 70 mmH, 133 mm phi x 292; 172; 72 mmH and 55 mm phi x 294; 174; 74 mmH, respectively. The sensitivity of prototype system was from 12 to 57 cps/μCi.cm - 3 , depending on the size of sampling cylinder and an efficiency of NaI(T1) detector. When pulses due to breamsstrahlungs with energy from 4 to 17 keV were counted, the minimum detectable concentration of the prototype tritium monitoring system was obtained to be 5.2 x 10 - 3 μCi/cm 3 . It was evaluated that the detectable range of concentration was from 1 x 10 - 2 to 1 x 10 3 μCi/cm 3 . (author)

  6. Semiconductor Detectors; Detectores de Semiconductores

    Energy Technology Data Exchange (ETDEWEB)

    Cortina, E.

    2007-07-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  7. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  8. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  9. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  10. Mid-infrared gas sensors of liquid crystal type

    International Nuclear Information System (INIS)

    Nazarava, K.U.; Navumenka, V.I.

    2005-01-01

    One of the most important tasks in the environmental monitoring field is detection and concentration measurements of different ingredients in natural and artificial mixtures of substances. According to the measuring of value of IR absorption of different gases one can determine their concentration in the environment. That is why there is a great practical and on principle fundamental interest to investigate an opportunity of making the devices which could be used for measuring the absorption of some gases in IR optical range and also would not have such disadvantages as construction complexity, cumbersome embodiments, difficulty in controlling and obligatory presence of the moving parts (mirrors, prisms or gratings). The main element in a sensor of the type proposed is a liquid-crystalline cell, possessing marked dichroism of optical absorption in some spectral range (IR region). By fitting the absorbance and alignment parameters of the LC cell, it is possible to create the effect of the absorption edge shift when varying the magnitude of electric field applied. This leads to some kind of wavelength modulation of an external optical radiation in the pre-determined spectral range. Adding an appropriate light detector to the system described, one can obtain a miniature scanning spectral instrument (sensor) of a liquid crystal type. LC cells with absorption bands in spectral range near 3 μm where some atmospheric hydrocarbons absorb were investigated. The technique for reducing true external spectrum from the signal detected after the modulation process was developed

  11. Performance analysis of series-shunt and TEE types of microwave switches of different semiconductor materials for Satellite communications

    Directory of Open Access Journals (Sweden)

    Cirilo Gabino León Vega

    2014-01-01

    Full Text Available Se presenta un análisis de desempeño de conmutadores de microondas compuestos, de una entrada y una salida (SPST, diseñados con diodos p-i-n tipo masa con diferentes tipos de materiales semiconductores para las bandas de frecuencia Ku y Ka. Las dos configuraciones de conmutadores compuestos más comunes son aquellos con diodos p-i-n ubicados en diseños serie-paralelo y serie-paralelo-serie (TEE y aquí son analizados utilizando materiales semiconductores de Si, GaAs, GaN-WZ, GaN-ZB, GaSb, InP y SiC. Se presenta la metodología utilizada en los cálculos de resistencia serie y capacitancia de unión en los diodos p-i-n con el propósito de calcular los parámetros de desempeño propios de cada dispositivo conmutador. Estos parámetros son pérdida de inserción y aislamiento. Los conmutadores de tipo serie-paralelo, exceptuando el conmutador basado en diodo p-i-n de SiC-6 H, exhiben pérdidas de inserción menores a 0.2 dB y aislamiento hasta 41dB a la frecuencia de operación de 12 GHz. El conmutador diodo p-i-n tipo TEE con base en GaN-ZB tiene la mejor respuesta de pérdida de inserción menor a 0.23 dB y aislamiento hasta 52 dB, a las frecuencias de operación de 12 GHz y 30 GHz. El conmutador compuesto con base en diodo p-i-n de GaSb alcanza el mejor desempeño a la frecuencia de 12 GHz. Los conmutadores de microondas con configuración TEE tienen respuestas satisfactorias para la frecuencia de 30 GHz.

  12. Molecular Gas and Star Formation in Local Early-type Galaxies

    NARCIS (Netherlands)

    Bureau, M.; Davis, T. A.; Alatalo, K.; Crocker, A. F.; Blitz, L.; Young, L. M.; Combes, F.; Bois, M.; Bournaud, F.; Cappellari, M.; Davies, R. L.; de Zeeuw, P. T.; Duc, P. -A; Emsellem, E.; Khochfar, S.; Krajnović, D.; Kuntschner, H.; Lablanche, P. -Y; McDermid, R. M.; Morganti, R.; Naab, T.; Oosterloo, T.; Sarzi, M.; Scott, N.; Serra, P.; Weijmans, A.; Carignan, Claude; Combes, François; Freeman, Ken C.

    2011-01-01

    The molecular gas content of local early-type galaxies is constrained and discussed in relation to their evolution. First, as part of the ATLAS3D survey, we present the first complete, large (260 objects), volume-limited single-dish survey of CO in normal local early-type galaxies. We find a

  13. Cold gas & mergers: fundamental difference in HI properties of different types of radio galaxies?

    NARCIS (Netherlands)

    Emonts, Bjorn; Morganti, Raffaella; Oosterloo, Tom; van Gorkom, Jacqueline

    2008-01-01

    We present results of a study of large-scale neutral hydrogen (HI) gas in nearby radio galaxies. We find that the early-type host galaxies of different types of radio sources (compact, FR-I and FR-II) appear to contain fundamentally different large-scale HI properties: enormous regular rotating

  14. The molecular gas content of 3 SDSS type 2 quasars at z~0.3

    Science.gov (United States)

    Villar martin, Montse; Perez Torres, Miguel Angel; Emonts, Bjorn; Rodriguez, Monica; Humphrey, Andrew J.

    2012-04-01

    Type 2 (obscured) quasars have been discovered in large quantities only recently. In particular, ~900 type 2 quasars at zselected in the optical from the Sloan Digital Sky Survey. Thanks to a variety of studies covering the full spectral range from X-ray to infrared, a complete picture is emerging about their nature and properties. However, a fundamental piece is still missing: the molecular gas content. It is not known whether the host galaxies of zmolecular gas. We propose to measure the molecular gas content in three well known type 2 quasars at z~ 0.3 using the CO(1-0) transition with the ATCA/CABB 3mm system. We will advance on the general understanding of the nature and evolution of these type-2 quasars through the determination of the cold molecular gas content, gas-to-dust ratio, star formation rate and gas depletion time-scale. In addition to the scientific interest of the data, these observations will be useful to plan a future follow up with ALMA. 72 hr of observing time are requested for this project.

  15. Amphoteric oxide semiconductors for energy conversion devices: a tutorial review.

    Science.gov (United States)

    Singh, Kalpana; Nowotny, Janusz; Thangadurai, Venkataraman

    2013-03-07

    In this tutorial review, we discuss the defect chemistry of selected amphoteric oxide semiconductors in conjunction with their significant impact on the development of renewable and sustainable solid state energy conversion devices. The effect of electronic defect disorders in semiconductors appears to control the overall performance of several solid-state ionic devices that include oxide ion conducting solid oxide fuel cells (O-SOFCs), proton conducting solid oxide fuel cells (H-SOFCs), batteries, solar cells, and chemical (gas) sensors. Thus, the present study aims to assess the advances made in typical n- and p-type metal oxide semiconductors with respect to their use in ionic devices. The present paper briefly outlines the key challenges in the development of n- and p-type materials for various applications and also tries to present the state-of-the-art of defect disorders in technologically related semiconductors such as TiO(2), and perovskite-like and fluorite-type structure metal oxides.

  16. Feasibility of Ericsson type isothermal expansion/compression gas turbine cycle for nuclear energy use

    International Nuclear Information System (INIS)

    Shimizu, Akihiko

    2007-01-01

    A gas turbine with potential demand for the next generation nuclear energy use such as HTGR power plants, a gas cooled FBR, a gas cooled nuclear fusion reactor uses helium as working gas and with a closed cycle. Materials constituting a cycle must be set lower than allowable temperature in terms of mechanical strength and radioactivity containment performance and so expansion inlet temperature is remarkably limited. For thermal efficiency improvement, isothermal expansion/isothermal compression Ericsson type gas turbine cycle should be developed using wet surface of an expansion/compressor casing and a duct between stators without depending on an outside heat exchanger performing multistage re-heat/multistage intermediate cooling. Feasibility of an Ericsson cycle in comparison with a Brayton cycle and multi-stage compression/expansion cycle was studied and technologies to be developed were clarified. (author)

  17. CFD STUDY ON ELIMINATING IMPURITIES FROMNATURAL GAS FLOWS IN CYCLONE-TYPE SEPARATORS

    OpenAIRE

    GLIGOR Alina Maria; OLEKSIK Valentin; DEAC Cristian; PETRESCU Valentin

    2014-01-01

    The quality of the natural gas extracted from deposits and transported through pipelines is a major factor in achieving the desired heating properties of the gas. A big problem related to the quality is the presence of impurities such as dust, sand or water. These can be removed by using separators. This paper presents an analysis of the efficiency of a cyclone-type separator in terms of speeds and pressure drops, using the computational fluid dynamics (CFD) method in the...

  18. Wake fields in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1994-05-01

    It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

  19. Method of developing all-optical trinary JK, D-type, and T-type flip-flops using semiconductor optical amplifiers.

    Science.gov (United States)

    Garai, Sisir Kumar

    2012-04-10

    To meet the demand of very fast and agile optical networks, the optical processors in a network system should have a very fast execution rate, large information handling, and large information storage capacities. Multivalued logic operations and multistate optical flip-flops are the basic building blocks for such fast running optical computing and data processing systems. In the past two decades, many methods of implementing all-optical flip-flops have been proposed. Most of these suffer from speed limitations because of the low switching response of active devices. The frequency encoding technique has been used because of its many advantages. It can preserve its identity throughout data communication irrespective of loss of light energy due to reflection, refraction, attenuation, etc. The action of polarization-rotation-based very fast switching of semiconductor optical amplifiers increases processing speed. At the same time, tristate optical flip-flops increase information handling capacity.

  20. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  1. Electrical tuning of the band alignment and magnetoconductance in an n-type ferromagnetic semiconductor (In,Fe)As-based spin-Esaki diode

    Science.gov (United States)

    Anh, Le Duc; Hai, Pham Nam; Tanaka, Masaaki

    2018-03-01

    We report a strong bias dependence of the magnetoconductance (MC) of a spin-Esaki diode composed of n+-type ferromagnetic semiconductor (FMS) (In,Fe)As and p+-type Be doped InAs grown on a p+-InAs (001) substrate by molecular beam epitaxy. When the bias voltage V is increased above 450 mV in the forward bias, we found that the MC, measured at 3.5 K under a magnetic field H of 1 T in the in-plane [110] direction, changes its sign from positive to negative and its magnitude rises rapidly from 0.5% at V fluid model, we explain both the magnitude and the anisotropy of the MC based on the evolution of the spin-Esaki diode's band profile with V. This analysis provides insights into the density of states and spin-polarization of the conduction band and the Fe-related impurity band in n-type FMS (In,Fe)As.

  2. Are BL Lac-type objects nearby black holes. [gas accretion model

    Science.gov (United States)

    Shapiro, S. L.; Elliot, J. L.

    1974-01-01

    It is pointed out that isolated black holes accreting interstellar gas can account for the characteristic properties of the Lacertids. Emission spectra for various interstellar gas densities and black hole masses are compared with the data plotted by Strittmatter et al. (1972) for the BL Lac-type objects. Rough estimates indicate that there may indeed be a finite number of stellar-mass black holes close to the earth as required by the theory. If it is determined that the BL Lac-type objects lie outside of the galactic disk a black hole accretion model may still apply if certain conditions are satisfied.

  3. Semiconductor X-ray spectrometers

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1978-02-01

    An outline is given of recent developments in particle and photon induced x-ray fluorescence (XRF) analysis. Following a brief description of the basic mechanism of semiconductor detector operation a comparison is made between semiconductor detectors, scintillators and gas filled proportional devices. Detector fabrication and cryostat design are described in more detail and the effects of various device parameters on system performance, such as energy resolution, count rate capability, efficiency, microphony, etc. are discussed. The main applications of these detectors in x-ray fluorescence analysis, electron microprobe analysis, medical and pollution studies are reviewed

  4. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  5. Power semiconductors

    CERN Document Server

    Kubát, M

    1984-01-01

    The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation an...

  6. Recent Developments in 2D Nanomaterials for Chemiresistive-Type Gas Sensors

    Science.gov (United States)

    Choi, Seon-Jin; Kim, Il-Doo

    2018-03-01

    Two-dimensional (2D) nanostructures are gaining tremendous interests due to the fascinating physical, chemical, electrical, and optical properties. Recent advances in 2D nanomaterials synthesis have contributed to optimization of various parameters such as physical dimension and chemical structure for specific applications. In particular, development of high performance gas sensors is gaining vast importance for real-time and on-site environmental monitoring by detection of hazardous chemical species. In this review, we comprehensively report recent achievements of 2D nanostructured materials for chemiresistive-type gas sensors. Firstly, the basic sensing mechanism is described based on charge transfer behavior between gas species and 2D nanomaterials. Secondly, diverse synthesis strategies and characteristic gas sensing properties of 2D nanostructures such as graphene, metal oxides, transition metal dichalcogenides (TMDs), metal organic frameworks (MOFs), phosphorus, and MXenes are presented. In addition, recent trends in synthesis of 2D heterostructures by integrating two different types of 2D nanomaterials and their gas sensing properties are discussed. Finally, this review provides perspectives and future research directions for gas sensor technology using various 2D nanomaterials.

  7. Molecular Gas in Debris Disks around Young A-type Stars

    Science.gov (United States)

    Moór, Attila; Curé, Michel; Kóspál, Ágnes; Ábrahám, Péter; Csengeri, Timea; Eiroa, Carlos; Gunawan, Diah; Henning, Thomas; Hughes, A. Meredith; Juhász, Attila; Pawellek, Nicole; Wyatt, Mark

    2017-11-01

    According to the current paradigm of circumstellar disk evolution, gas-rich primordial disks evolve into gas-poor debris disks that are composed of second-generation dust. To explore the transition between these phases, we searched for 12CO, 13CO, and C18O emission in seven dust-rich debris disks around young A-type stars, using the Atacama Large Millimeter/submillimeter Array (ALMA) in Band 6. We discovered molecular gas in three debris disks. In all of these disks, the 12CO line was optically thick, highlighting the importance of less abundant molecules in reliable mass estimates. By supplementing our target list with literature data, we compiled a volume-limited sample of dust-rich debris disks around young A-type stars within 150 pc. We obtained a CO detection rate of 11/16 above a 12CO J = 2-1 line luminosity threshold of ˜1.4 × 104 Jy km s-1pc2 in the sample. This high incidence implies that the presence of CO gas in the bright debris disks around young A-type stars is more likely the rule than the exception. Interestingly, dust-rich debris disks around young FG-type stars exhibit, with the same detectability threshold as A-type stars, a significantly lower gas incidence. While the transition from the protoplanetary phase to the debris phase is associated with a drop in the dust content, our results exhibit a large spread in the CO mass in our debris sample, with peak values that are comparable to those in the protoplanetary Herbig Ae disks. In the particularly CO-rich debris systems, the gas may have a primordial origin, which is a characteristic of a hybrid disk.

  8. Application of gas geochemistry experiment in the search for different types of uranium deposits

    International Nuclear Information System (INIS)

    Chen Guoliang; Liu Hanbin; Dong Xiukang; Xiong Xianxiang; Li Zhenfu; Wu Duanyang

    1998-03-01

    The study of primary and secondary gas halo and their application in the search for different types of uranium deposits in China is presented. Through measuring Rn, CO 2 , O 2 and Hg in various deposits of geological and climatic conditions for the gas geochemical survey, three comprehensive measuring methods of CO 2 , Rn and O 2 were thought to be optimum for gas geochemical exploration because of its portability, rapidity, low cost, simple operation and limited interference. The experimental data can be briefly summarized that higher concentration of CO 2 , Rn and lower concentration of secondary halo in soil show blinded deposits. The study of thermal emanating gas in soil and rock have been finished. The methods were confirmed by known deposits and can be used in uranium exploration

  9. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  10. Carbonate-type cracking in an FCC Wet gas compressor station

    Energy Technology Data Exchange (ETDEWEB)

    Mirabel, E. (Asesoria Tech, C.A., P.O. Box 66501, Caracas (VE)); Bhattacharjee, S. (Refineria Isla (Curazao), P.O. Box 3843, Curacao (AN)); Pazos, N. (Intevep, P.O. Box 76343, Los Teques (VE))

    1991-07-01

    The petroleum refinery industry is becoming increasingly aware of hydrogen-related damage that can be induced by wet hydrogen sulfide (H{sub 2}S) and amine on equipment and piping fabricated from carbon and low-alloy steel. This paper reports that cracking of second-stage knock-out drum of a fluid catalytic cracking wet gas compressor station has been studied. Carbonate-type cracking mechanism in carbon steel has been identified as responsible for the intergranular and branched cracks that produced the leakage of the vessel. The gas containing CO{sub 2}, H{sub 2}S, ammonia, and cyanides, plus water and sludge trapped in the gas inlet support, assisted by stress concentration due to welding configuration, have been identified as responsible for such a type of cracking.

  11. Effects of types and doses of yeast on gas production and in vitro ...

    African Journals Online (AJOL)

    2016-11-12

    Nov 12, 2016 ... Effects of types and doses of yeast on gas production and in vitro digestibility of diets containing ... Several studies have been conducted to evaluate neutral detergent fibre (NDF) levels with yeast (Plata ... to evaluate the effects of two commercial yeast products on in vitro fermentation kinetic parameters, as ...

  12. Fast detoxication of 2-chloro ethyl ethyl sulfide by p-type Ag{sub 2}O semiconductor nanoparticle-loaded Al{sub 2}O{sub 3}-based supports

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Meng-Wei [Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Kuo, Dong-Hau, E-mail: dhkuo@mail.ntust.edu.tw [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China)

    2016-01-15

    Highlights: • Detoxication of CWA surrogate of 2-chloro ethyl ethyl sulfide is investigated. • A small amount of Ag{sub 2}O on Al{sub 2}O{sub 3}-base support is sufficient to degrade 2-CEES. • Detoxication conversion >82% in 15 min is achieved for >2.5% Ag{sub 2}O/Na{sub 2}SiO{sub 3}/Al{sub 2}O{sub 3}. • Na{sub 2}SiO{sub 3} modified Al{sub 2}O{sub 3} to have the valley-like line pattern for depositing Ag{sub 2}O. • 2-CEES oxidation is initiated from the dominant electronic holes in p-type Ag{sub 2}O. - Abstract: p-type Ag{sub 2}O semiconductor nanoparticle-loaded Al{sub 2}O{sub 3} or Na{sub 2}SiO{sub 3}/Al{sub 2}O{sub 3} powders used for detoxicating the surrogate of sulfur mustard of 2-chloro ethyl ethyl sulfide (C{sub 2}H{sub 5}SCH{sub 2}CH{sub 2}Cl, 2-CEES) were investigated. Different amounts of Ag{sub 2}O and Na{sub 2}SiO{sub 3} on catalyst supports were evaluated. Gas chromatography with a pulsed flame photometric detector (GC–PFPD) and gas chromatography coupled with a mass spectroscopy (GC–MS) were used to monitor and identify the catalytic reactions, together with reaction products analysis. The GC analyses showed that the decontamination of 2-CEES in isopropanol solvent for 15 min was above 82% efficiency for the 0.5% Na{sub 2}SiO{sub 3}/Al{sub 2}O{sub 3} support deposited with a Ag{sub 2}O content above 2.5%. 2-(ethylthio)ethanol and 2-(ethylthio)ethanoic acid were identified as the major products after catalytic reactions. The electronic holes dominating in p-type Ag{sub 2}O is proposed to provide the key component and to initiate the catalytic reactions. The electronic hole-based detoxication mechanism is proposed.

  13. [Evaluation of small semiconductor gamma camera--simulation of sentinel lymph node biopsy by using a trial product of clinical type gamma camera].

    Science.gov (United States)

    Oda, Takaaki; Hayama, Kazuhide; Tsuchimochi, Makoto

    2009-03-01

    This study was to verify the performance of three different collimators that were equipped to the clinical application type of small semiconductor gamma camera (SSGC) for radio-guided surgery. We also wanted to see if the clinical application type could be effective to detect sentinel nodes in simulation studies for sentinel lymph node biopsy. The camera head consisted of a pixelized CdTe module (32 x 32 individual elements, total of 1,024 pixels) (Acrorad Co. Ltd., Tokyo, Japan). The field of view was 44.8 mm x 44.8 mm. The clinical application type of this gamma camera had three exchangeable collimators; standard, high sensitivity and high resolution (ST, HS, HR). Energy resolution, full-width at half-maximum (FWHM), of the CdTe detector attached with the standard collimator was 6.9% at 141 keV (99mTc). The spatial resolution, represented by FWHM, had a mean value of 1.59 mm. The data was comparable to the results of the prototype SSGC. The simulation studies showed that HS could more sensitively detect the simulated nodes than ST and HR did, and HR could more reliably distinguish the simulated sentinel node that situated close to the injection site than other two collimators did. However the depiction was interfered by the higher background radiation levels. We suggest that this SSGC clinical application type may provide advantages over the standard system for isolating sentinel lymph nodes biopsy. We also believe that the SSGC may aid surgeons in identifying target tissues when performing radio-guided surgery.

  14. High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor

    KAUST Repository

    Li, Feng

    2016-12-13

    A solution-processed near-infrared (NIR) organic phototransistor (OPT) based on n-type organic small molecular material BODIPY-BF2 has been successfully fabricated. Its unprecedented performance, as well as its easy fabrication and good stability, mark this BODIPY-BF2 based OPT device as a very promising candidate for optoelectronic applications in the NIR regime.

  15. Polymorphic transformation of dense ZnO nanoparticles: Implications for chair/boat-type Peierls distortions of AB semiconductor

    DEFF Research Database (Denmark)

    Chen, Shuei-Yuan; Shen, Pouyan; Jiang, Jianzhong

    2004-01-01

    ) and then transformation strain induced (11 (1) over bar)(R) //((1) over bar 011)(W); [011](R) //[01 (1) over bar1](W). The two relationships can be rationalized by specified extent of chair- and boat-type Peierls distortions accompanied with band gap opening and intermediate {111}(R) slip for energetically favorable {111...

  16. The ATLAS(3D) project : XIX. The hot gas content of early-type galaxies: fast versus slow rotators

    NARCIS (Netherlands)

    Sarzi, Marc; Alatalo, Katherine; Blitz, Leo; Bois, Maxime; Bournaud, Frederic; Bureau, Martin; Cappellari, Michele; Crocker, Alison; Davies, Roger L.; Davis, Timothy A.; de Zeeuw, P. T.; Duc, Pierre-Alain; Emsellem, Eric; Khochfar, Sadegh; Krajnovic, Davor; Kuntschner, Harald; Lablanche, Pierre-Yves; McDermid, Richard M.; Morganti, Raffaella; Naab, Thorsten; Oosterloo, Tom; Scott, Nicholas; Serra, Paolo; Young, Lisa M.; Weijmans, Anne-Marie

    2013-01-01

    For early-type galaxies, the ability to sustain a corona of hot, X-ray-emitting gas could have played a key role in quenching their star formation history. A halo of hot gas may act as an effective shield against the acquisition of cold gas and can quickly absorb stellar mass loss material. Yet,

  17. The ATLAS3D project - XIX. The hot gas content of early-type galaxies: fast versus slow rotators

    NARCIS (Netherlands)

    Sarzi, Marc; Alatalo, Katherine; Blitz, Leo; Bois, Maxime; Bournaud, Frédéric; Bureau, Martin; Cappellari, Michele; Crocker, Alison; Davies, Roger L.; Davis, Timothy A.; de Zeeuw, P. T.; Duc, Pierre-Alain; Emsellem, Eric; Khochfar, Sadegh; Krajnović, Davor; Kuntschner, Harald; Lablanche, Pierre-Yves; McDermid, Richard M.; Morganti, Raffaella; Naab, Thorsten; Oosterloo, Tom; Scott, Nicholas; Serra, Paolo; Young, Lisa M.; Weijmans, Anne-Marie

    For early-type galaxies, the ability to sustain a corona of hot, X-ray-emitting gas could have played a key role in quenching their star formation history. A halo of hot gas may act as an effective shield against the acquisition of cold gas and can quickly absorb stellar mass loss material. Yet,

  18. Gas Condensates onto a LHC Type Cryogenic Vacuum System Subjected to Electron Cloud

    CERN Multimedia

    Baglin, V

    2004-01-01

    In the Large Hadron Collider (LHC), the gas desorbed via photon stimulated molecular desorption or electron stimulated molecular desorption will be physisorbed onto the beam screen held between 5 and 20 K. Studies of the effects of the electron cloud onto a LHC type cryogenic vacuum chamber have been done with the cold bore experiment (COLDEX) installed in the CERN Super Proton Synchrotron (SPS). Experiments performed with gas condensates such as H2, H2O, CO and CO2 are described. Implications for the LHC design and operation are discussed.

  19. Mode-locked semiconductor laser for long and absolute distance measurement based on laser pulse repetition frequency sweeping: a comparative study between three types of lasers

    Science.gov (United States)

    Castro Alves, D.; Abreu, Manuel; Cabral, Alexandre; Rebordão, J. M.

    2017-08-01

    In this work we present a study on three types of semiconductor mode-locked lasers as possible sources for a high precision absolute distance metrology measurement concept based on pulse repetition frequency (PRF) sweep. In this work, we evaluated one vertical emission laser and two transversal emission sources. The topology of the gain element is quantum-well, quantum-dot and quantum-dash, respectively. Only the vertical emission laser has optical pump, whilst the others operate with electric pumping. The quantum-dash laser does not have a saturable absorber in its configuration but relies on a dispersion compensating fiber for generating pulses. The bottleneck of vertical emission laser is his high power density pump (4.5W/165μm), increasing the vulnerability of damaging the gain element. The other lasers, i.e., the single (quantum-dash) and double section (quantum-dot) lasers present good results either in terms of applicability to the metrology system or in terms of robustness. Using RF injection on the gain element, both lasers show good PRF stabilization results (better than σy(10ms) = 10-9 ) which is a requirement for the mentioned metrology technique.

  20. Al0.3Ga0.7As/GaAs metal-insulator-semiconductor-type field-effect transistor fabricated on an InP substrate

    Science.gov (United States)

    Agarwala, S.; Patil, M. B.; Peng, C. K.; Morkoç, H.

    1988-08-01

    A metal-insulator-semiconductor-type Al0.3Ga0.7As/GaAs field-effect transistor with 1-μm-long by 145-μm-wide gates and intrinsic transconductance of 180 mS/mm has been demonstrated on an InP substrate. The dislocation propagation is minimized by incorporating a superlattice on InP, and a 1.5 μm undoped GaAs buffer layer is grown prior to the actual channel to ensure good quality of the 250 Å active layer. A channel mobility of 1920 cm2/(V s) and a carrier concentration of 1.28×1018 cm-3 have been measured at 300 K. The device exhibits excellent pinch-off, and the gate-to-source reverse breakdown voltage is greater than 5 V. The low output conductance of 2.5 mS/mm indicated small parallel conduction in the undoped GaAs buffer layer. Also, very little hysteresis was found in the current-voltage characteristics, implying few traps in the epilayer.

  1. The ATLAS3D project - XXVII. Cold gas and the colours and ages of early-type galaxies

    NARCIS (Netherlands)

    Young, Lisa M.; Scott, Nicholas; Serra, Paolo; Alatalo, Katherine; Bayet, Estelle; Blitz, Leo; Bois, Maxime; Bournaud, Frédéric; Bureau, Martin; Crocker, Alison F.; Cappellari, Michele; Davies, Roger L.; Davis, Timothy A.; de Zeeuw, P. T.; Duc, Pierre-Alain; Emsellem, Eric; Khochfar, Sadegh; Krajnović, Davor; Kuntschner, Harald; McDermid, Richard M.; Morganti, Raffaella; Naab, Thorsten; Oosterloo, Tom; Sarzi, Marc; Weijmans, Anne-Marie

    2014-01-01

    We present a study of the cold gas contents of the ATLAS3D early-type galaxies, in the context of their optical colours, near-ultraviolet colours and Hβ absorption line strengths. Early-type (elliptical and lenticular) galaxies are not as gas poor as previously thought, and at least 40 per cent of

  2. Rutile-type Co doped SnO{sub 2} diluted magnetic semiconductor nanoparticles: Structural, dielectric and ferromagnetic behavior

    Energy Technology Data Exchange (ETDEWEB)

    Mehraj, Sumaira, E-mail: sumairamehraj07@gmail.com [Department of Applied Physics, Aligarh Muslim University, Aligarh-202002 (India); Shahnawaze Ansari, M. [Center of Nanotechnology, King Abdulaziz University, Jeddah-21589 (Saudi Arabia); Alimuddin [Department of Applied Physics, Aligarh Muslim University, Aligarh-202002 (India)

    2013-12-01

    Nanoparticles of basic composition Sn{sub 1−x}Co{sub x}O{sub 2} (x=0.00, 0.01, 0.03, 0.05 and 0.1) were synthesized through the citrate-gel method and were characterized for structural properties using X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS) and Fourier transform infrared spectroscopy (FT-IR). XRD analysis of the powder samples sintered at 500 °C for 12 h showed single phase rutile type tetragonal structure and the crystallite size decreased as the cobalt content was increased. FT-IR spectrum displayed various bands that came due to fundamental overtones and combination of O–H, Sn–O and Sn–O–Sn entities. The effect of Co doping on the electrical and magnetic properties was studied using dielectric spectroscopy and vibrating sample magnetometer (VSM) at room temperature. The dielectric parameters (ε, tan δ and σ{sub ac}) show their maximum value for 10% Co doping. The dielectric loss shows anomalous behavior with frequency where it exhibits the Debye relaxation. The variation of dielectric properties and ac conductivity with frequency reveals that the dispersion is due to the Maxwell–Wagner type of interfacial polarization in general and hopping of charge between Sn{sup 2+} and Sn{sup 4+} as well as between Co{sup 2+} and Co{sup 3+} ions. The complex impedance analysis was used to separate the grain and grain boundary contributions in the system which shows that the conduction process in grown nanoparticles takes place predominantly through grain boundary volume. Hysteresis loops were observed clearly in M–H curves from 0.01 to 0.1% Co doped SnO{sub 2} samples. The saturation magnetization of the doped samples increased slightly with increase of Co concentration. However pure SnO{sub 2} displayed paramagnetism which vanished at higher values of magnetic field.

  3. Fabrication of a P3HT-ZnO Nanowires Gas Sensor Detecting Ammonia Gas

    Directory of Open Access Journals (Sweden)

    Chin-Guo Kuo

    2017-12-01

    Full Text Available In this study, an organic-inorganic semiconductor gas sensor was fabricated to detect ammonia gas. An inorganic semiconductor was a zinc oxide (ZnO nanowire array produced by atomic layer deposition (ALD while an organic material was a p-type semiconductor, poly(3-hexylthiophene (P3HT. P3HT was suitable for the gas sensing application due to its high hole mobility, good stability, and good electrical conductivity. In this work, P3HT was coated on the zinc oxide nanowires by the spin coating to form an organic-inorganic heterogeneous interface of the gas sensor for detecting ammonia gas. The thicknesses of the P3HT were around 462 nm, 397 nm, and 277 nm when the speeds of the spin coating were 4000 rpm, 5000 rpm, and 6000 rpm, respectively. The electrical properties and sensing characteristics of the gas sensing device at room temperature were evaluated by Hall effect measurement and the sensitivity of detecting ammonia gas. The results of Hall effect measurement for the P3HT-ZnO nanowires semiconductor with 462 nm P3HT film showed that the carrier concentration and the mobility were 2.7 × 1019 cm−3 and 24.7 cm2∙V−1∙s−1 respectively. The gas sensing device prepared by the P3HT-ZnO nanowires semiconductor had better sensitivity than the device composed of the ZnO film and P3HT film. Additionally, this gas sensing device could reach a maximum sensitivity around 11.58 per ppm.

  4. Fabrication of a P3HT-ZnO Nanowires Gas Sensor Detecting Ammonia Gas.

    Science.gov (United States)

    Kuo, Chin-Guo; Chen, Jung-Hsuan; Chao, Yi-Chieh; Chen, Po-Lin

    2017-12-25

    In this study, an organic-inorganic semiconductor gas sensor was fabricated to detect ammonia gas. An inorganic semiconductor was a zinc oxide (ZnO) nanowire array produced by atomic layer deposition (ALD) while an organic material was a p-type semiconductor, poly(3-hexylthiophene) (P3HT). P3HT was suitable for the gas sensing application due to its high hole mobility, good stability, and good electrical conductivity. In this work, P3HT was coated on the zinc oxide nanowires by the spin coating to form an organic-inorganic heterogeneous interface of the gas sensor for detecting ammonia gas. The thicknesses of the P3HT were around 462 nm, 397 nm, and 277 nm when the speeds of the spin coating were 4000 rpm, 5000 rpm, and 6000 rpm, respectively. The electrical properties and sensing characteristics of the gas sensing device at room temperature were evaluated by Hall effect measurement and the sensitivity of detecting ammonia gas. The results of Hall effect measurement for the P3HT-ZnO nanowires semiconductor with 462 nm P3HT film showed that the carrier concentration and the mobility were 2.7 × 10 19 cm -3 and 24.7 cm²∙V -1 ∙s -1 respectively. The gas sensing device prepared by the P3HT-ZnO nanowires semiconductor had better sensitivity than the device composed of the ZnO film and P3HT film. Additionally, this gas sensing device could reach a maximum sensitivity around 11.58 per ppm.

  5. Drastic Control of Texture in a High Performance n-Type Polymeric Semiconductor and Implications for Charge Transport

    KAUST Repository

    Rivnay, Jonathan

    2011-07-12

    Control of crystallographic texture from mostly face-on to edge-on is observed for the film morphology of the n-type semicrystalline polymer {[N,N-9-bis(2-octyldodecyl)naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl] -alt-5,59-(2,29-bithiophene)}, P(NDI2OD-T2), when annealing the film to the polymer melting point followed by slow cooling to ambient temperature. A variety of X-ray diffraction analyses, including pole figure construction and Fourier transform peak shape deconvolution, are employed to quantify the texture change, relative degree of crystallinity and lattice order. We find that annealing the polymer film to the melt leads to a shift from 77.5% face-on to 94.6% edge-on lamellar texture as well as to a 2-fold increase in crystallinity and a 40% decrease in intracrystallite cumulative disorder. The texture change results in a significant drop in the electron-only diode current density through the film thickness upon melt annealing, while little change is observed in the in-plane transport of bottom gated thin film transistors. This suggests that the texture change is prevalent in the film interior and that either the (bottom) surface structure is different from the interior structure or the intracrystalline order and texture play a secondary role in transistor transport for this material. © 2011 American Chemical Society.

  6. Semiconductor ionizino. radiation detectors

    International Nuclear Information System (INIS)

    1982-01-01

    Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

  7. Influence of parameters of gas medium on the fluorescence of iodine molecules 129I2, 127I129I and 127I2 excited by semiconductor laser radiation

    Science.gov (United States)

    Kireev, S. V.; Shnyrev, S. L.

    2012-12-01

    Calculated and experimental results of studies of the influence of vapor temperature of iodine molecules (129I2, 127I129I, and 127I2) and pressure of the analyzed medium on the intensity of fluorescence of the molecules excited by semiconductor laser radiation in the red spectrum region are reported. It is demonstrated that depending on the wavelength of laser radiation there exist different ranges of temperatures and pressure values at which the fluorescence intensities of each of the indicated iodine molecules reach their maximum values.

  8. Establishing blood gas ranges in healthy bovine neonates differentiated by age, sex, and breed type.

    Science.gov (United States)

    Dillane, Patrick; Krump, Lea; Kennedy, Aideen; Sayers, Ríona G; Sayers, Gearóid P

    2018-04-01

    Calf mortality and morbidity commonly occurs within the first month of life postpartum. Standard health ranges are invaluable aids in diagnostic veterinary medicine to confirm normal or the degree and nature of abnormal parameters in (sub)clinically ill animals. Extensive research has indicated significant differences between the physiologies of neonate and adult cattle, particularly for blood parameters such as pH, base excess, anion gap, and bicarbonate (HCO 3 - ). The objective of this research was to determine the influence of age, sex, and breed type, in addition to environmental factors, on the normal blood gas profiles of neonatal calves, and thus develop a scientifically validated reference range accounting for any significant factors. The study was conducted on healthy neonatal calves (n = 288), and completed over a 2-yr period. Individual calf blood gas analysis was conducted for parameters of pH, base excess, Na + , K + , Ca 2+ , Cl - , glucose, total hemoglobin, HCO 3 - , pCO 2 , anion gap, strong ion difference, and hematocrit levels. Regression procedures examined the combined effect of year, farm, age, breed type, sex, and hours postfeeding on each variable. Significant effects were observed for age, sex, and breed type on several of the blood gas variables. Furthermore, year, farm, and hours postfeeding appeared to have less of an influence on neonatal bovine blood gas profiles. Consequently, specific ranges based on the neonate's age, sex, and breed type will allow for more detailed and accurate diagnosis of health and ill health in neonatal calves. The Authors. Published by FASS Inc. and Elsevier Inc. on behalf of the American Dairy Science Association®. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/3.0/).

  9. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  10. The synthesis of a new type adsorbent for the removal of toxic gas by radiation-induced graft polymerization

    International Nuclear Information System (INIS)

    Okamoto, Jiro; Sugo, Takanobu

    1990-01-01

    A new type of adsorbent containing sulfuric acid group for the removal of ammonia gas was synthesized by radiation-induced graft polymerization of styrene onto fibrous and nonwoven type polypropylene followed by sulufonation with chlorosulfonic acid. The rate of the adsorption of ammonia gas by H-type adsorbent is independent of the ion-exchange capacity. The amount of ammonia gas adsorbed by the chemical adsorption was dependent on the ion-exchange capacity of H-type fibrous adsorbent and was kept constant value in spite of the equilibrium pressure of ammonia gas. Cu(II)- and Ni(II)-types fibrous adsorbent were prepared by the ion exchange reaction of Na-type fibrous adsorbent with metal nitrate solutions. Although, the rate of adsorption of ammonia gas by metal-type fibrous adsorbent is lower than that of H-type adsorbent, the amount of ammonia gas adsorbed increases compared to H-type adsorbent with the same ion exchange capacity. It was related to the highest coordination number of metal ion. The ratio of the number of ammonia molecules adsorbed chemically and the number of metal ion adsorbed in fibrous adsorbent was 4 for Cu-type and 6 for Ni-type fibrous adsorbent, respectively. (author)

  11. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  12. Gas

    International Nuclear Information System (INIS)

    1996-01-01

    The French government has decided to modify the conditions of extension of local natural gas authorities to neighbouring districts. The European Union is studying the conditions of internal gas market with the objective of more open markets although considering public service requirements

  13. Wide band gap semiconductor templates

    Energy Technology Data Exchange (ETDEWEB)

    Arendt, Paul N. (Los Alamos, NM); Stan, Liliana (Los Alamos, NM); Jia, Quanxi (Los Alamos, NM); DePaula, Raymond F. (Santa Fe, NM); Usov, Igor O. (Los Alamos, NM)

    2010-12-14

    The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

  14. Method of physical vapor deposition of metal oxides on semiconductors

    Science.gov (United States)

    Norton, David P.

    2001-01-01

    A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

  15. Emission line gas in early-type galaxies: Kinematics and physical conditions

    Science.gov (United States)

    Deustua, S. E.; Koratkar, A. P.; Macalpine, G.

    1993-01-01

    Recent studies have found line emission gas in nearby early-type galaxies, but the properties of the emission-line gas in these 'normal' galaxies remain enigmatic. In terms of activity in the nucleus, these LINER-like galaxies form an important link between giant H 2 region galaxies and low-luminosity Seyferts. Despite their large numbers and evolutionary significance, we do not know whether these galaxies form a homogeneous class of objects; nor do we know how the distribution and kinematics of the line emission gas are affected by the host galaxy's environment or by the properties of the central engine, if present. To address these issues we are conducting a magnitude and volume limited survey of nearby early-type galaxies at Lick Observatory and the Michigan-Dartmouth-MIT Observatory. We have selected approximately 100 galaxies from radio catalogs. A large sample is necessary because while studies of individual 'LINERS' have led to a certain understanding of the phenomenon, these studies have not provided a global framework. Here we present results from our first run of medium resolution (approximately 5 A FWHM) spectroscopy. Kinematic data and line ratios determined along the major and minor axes of 6 galaxies are discussed. The information gleaned from spectroscopic data, when combined with data at other wavelengths, will enable a thorough investigation into the nature of low luminosity nuclear activity.

  16. Seismic response of high temperature gas-cooled reactor core with block-type fuel, (2)

    International Nuclear Information System (INIS)

    Ikushima, Takeshi; Honma, Toshiaki.

    1980-01-01

    For the aseismic design of a high temperature gas-cooled reactor (HTGR) with block-type fuel, it is necessary to predict the motion and force of core columns and blocks. To reveal column vibration characteristics in three-dimensional space and impact response, column vibration tests were carried out with a scale model of a one-region section (seven columns) of the HTGR core. The results are as follows: (1) the column has a soft spring characteristic based on stacked blocks connected with loose pins, (2) the column has whirling phenomena, (3) the compression spring force simulating the gas pressure has the effect of raising the column resonance frequency, and (4) the vibration behavior of the stacked block column and impact response of the surrounding columns show agreement between experiment and analysis. (author)

  17. Defects in semiconductor nanostructures

    Indian Academy of Sciences (India)

    Impurities play a pivotal role in semiconductors. One part in a million of phosphorous in silicon alters the conductivity of the latter by several orders of magnitude. Indeed, the information age is possible only because of the unique role of shallow impurities in semiconductors. Although work in semiconductor nanostructures ...

  18. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  19. Genetic Types and Source of the Upper Paleozoic Tight Gas in the Hangjinqi Area, Northern Ordos Basin, China

    Directory of Open Access Journals (Sweden)

    Xiaoqi Wu

    2017-01-01

    Full Text Available The molecular and stable isotopic compositions of the Upper Paleozoic tight gas in the Hangjinqi area in northern Ordos Basin were investigated to study the geochemical characteristics. The tight gas is mainly wet with the dryness coefficient (C1/C1–5 of 0.853–0.951, and δ13C1 and δ2H-C1 values are ranging from -36.2‰ to -32.0‰ and from -199‰ to -174‰, respectively, with generally positive carbon and hydrogen isotopic series. Identification of gas origin indicates that tight gas is mainly coal-type gas, and it has been affected by mixing of oil-type gas in the wells from the Shilijiahan and Gongkahan zones adjacent to the Wulanjilinmiao and Borjianghaizi faults. Gas-source correlation indicates that coal-type gas in the Shiguhao zone displays distal-source accumulation. It was mainly derived from the coal-measure source rocks in the Upper Carboniferous Taiyuan Formation (C3t and Lower Permian Shanxi Formation (P1s, probably with a minor contribution from P1s coal measures from in situ Shiguhao zone. Natural gas in the Shilijiahan and Gongkahan zones mainly displays near-source accumulation. The coal-type gas component was derived from in situ C3t-P1s source rocks, whereas the oil-type gas component might be derived from the carbonate rocks in the Lower Ordovician Majiagou Formation (O1m.

  20. Semiconductor saturable absorbers for ultrafast THz signals

    DEFF Research Database (Denmark)

    Hoffmann, Matthias C.; Turchinovich, Dmitry

    We demonstrate saturable absorber behavior of n-type semiconductors in the THz frequency range using nonlinear THz spectroscopy. Further, we observe THz pulse shortening and increase of the group refractive index at high field strengths.......We demonstrate saturable absorber behavior of n-type semiconductors in the THz frequency range using nonlinear THz spectroscopy. Further, we observe THz pulse shortening and increase of the group refractive index at high field strengths....

  1. Small-signal analysis of granular semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Varpula, Aapo; Sinkkonen, Juha; Novikov, Sergey, E-mail: aapo.varpula@tkk.f [Department of Micro and Nanosciences, Aalto University, PO Box 13500, FI-00076 Aalto, Espoo (Finland)

    2010-11-01

    The small-signal ac response of granular n-type semiconductors is calculated analytically using the drift-diffusion theory when electronic trapping at grain boundaries is present. An electrical equivalent circuit (EEC) model of a granular n-type semiconductor is presented. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is very good in a broad frequency range at low dc bias voltages.

  2. Small-signal analysis of granular semiconductors

    International Nuclear Information System (INIS)

    Varpula, Aapo; Sinkkonen, Juha; Novikov, Sergey

    2010-01-01

    The small-signal ac response of granular n-type semiconductors is calculated analytically using the drift-diffusion theory when electronic trapping at grain boundaries is present. An electrical equivalent circuit (EEC) model of a granular n-type semiconductor is presented. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is very good in a broad frequency range at low dc bias voltages.

  3. Understanding the nuclear gas dispersion in early-type galaxies in the context of black hole demographics

    NARCIS (Netherlands)

    Kleijn, GAV; van der Marel, RP; Noel-Storr, J

    The majority of nearby early-type galaxies contain detectable amounts of emission-line gas at their centers. The nuclear gas kinematics form a valuable diagnostic of the central black hole (BH) mass. Here we analyze and model Hubble Space Telescope STIS observations of a sample of 27 galaxies; 16

  4. Dzyaloshinskii-Moriya-type interaction and Lifshitz invariant in Rashba 2D electron gas systems

    Science.gov (United States)

    Pyatakov, Alexander P.; Zvezdin, Anatoly K.

    2014-09-01

    The origin of chiral magnetic structures in ultrathin films of magnetic metals is analyzed. It is shown that the Lifshitz-type invariant term in the macroscopic thermodynamic potential can be derived from the spin-orbit Rashba Hamiltonian in two-dimensional electron gas (2DEG). The former is the prerequisite for the existence of spin cycloids, skyrmions and other chiral phenomena observed in thin films. The estimation of the period of spin cycloid gives the value of an order of 10 nm typical for structures reported in the literature.

  5. Quantitative evaluation of chemisorption processes on semiconductors

    Science.gov (United States)

    Rothschild, A.; Komem, Y.; Ashkenasy, N.

    2002-12-01

    This article presents a method for numerical computation of the degree of coverage of chemisorbates and the resultant surface band bending as a function of the ambient gas pressure, temperature, and semiconductor doping level. This method enables quantitative evaluation of the effect of chemisorption on the electronic properties of semiconductor surfaces, such as the work function and surface conductivity, which is of great importance for many applications such as solid- state chemical sensors and electro-optical devices. The method is applied for simulating the chemisorption behavior of oxygen on n-type CdS, a process that has been investigated extensively due to its impact on the photoconductive properties of CdS photodetectors. The simulation demonstrates that the chemisorption of adions saturates when the Fermi level becomes aligned with the chemisorption-induced surface states, limiting their coverage to a small fraction of a monolayer. The degree of coverage of chemisorbed adions is proportional to the square root of the doping level, while neutral adsorbates are independent of the doping level. It is shown that the chemisorption of neutral adsorbates behaves according to the well-known Langmuir model, regardless of the existence of charged species on the surface, while charged adions do not obey Langmuir's isotherm. In addition, it is found that in depletive chemisorption processes the resultant surface band bending increases by 2.3kT (where k is the Boltzmann constant and T is the temperature) when the gas pressure increases by one order of magnitude or when the doping level increases by two orders of magnitude.

  6. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  7. Quantum theory of the electronic and optical properties of low-dimensional semiconductor systems

    Science.gov (United States)

    Lau, Wayne Heung

    This thesis examines the electronic and optical properties of low-dimensional semiconductor systems. A theory is developed to study the electron-hole generation-recombination process of type-II semimetallic semiconductor heterojunctions based on a 3 x 3 k·p matrix Hamiltonian (three-band model) and an 8 x 8 k·p matrix Hamiltonian (eight-band model). A novel electron-hole generation and recombination process, which is called activationless generation-recombination process, is predicted. It is demonstrated that the current through the type-II semimetallic semiconductor heterojunctions is governed by the activationless electron-hole generation-recombination process at the heterointerfaces, and that the current-voltage characteristics are essentially linear. A qualitative agreement between theory and experiments is observed. The numerical results of the eight-band model are compared with those of the threeband model. Based on a lattice gas model, a theory is developed to study the influence of a random potential on the ionization equilibrium conditions for bound electron-hole pairs (excitons) in III--V semiconductor heterostructures. It is demonstrated that ionization equilibrium conditions for bound electron-hole pairs change drastically in the presence of strong disorder. It is predicted that strong disorder promotes dissociation of excitons in III--V semiconductor heterostructures. A theory of polariton (photon dressed by phonon) spontaneous emission in a III--V semiconductor doped with semiconductor quantum dots (QDs) or quantum wells (QWs) is developed. For the first time, superradiant and subradiant polariton spontaneous emission phenomena in a polariton-QD (QW) coupled system are predicted when the resonance energies of the two identical QDs (QWs) lie outside the polaritonic energy gap. It is also predicted that when the resonance energies of the two identical QDs (QWs) lie inside the polaritonic energy gap, spontaneous emission of polariton in the polariton

  8. Semiconductor integrated circuits

    International Nuclear Information System (INIS)

    Michel, A.E.; Schwenker, R.O.; Ziegler, J.F.

    1979-01-01

    An improved method involving ion implantation to form non-epitaxial semiconductor integrated circuits. These are made by forming a silicon substrate of one conductivity type with a recessed silicon dioxide region extending into the substrate and enclosing a portion of the silicon substrate. A beam of ions of opposite conductivity type impurity is directed at the substrate at an energy and dosage level sufficient to form a first region of opposite conductivity within the silicon dioxide region. This impurity having a concentration peak below the surface of the substrate forms a region of the one conductivity type which extends from the substrate surface into the first opposite type region to a depth between the concentration peak and the surface and forms a second region of opposite conductivity type. The method, materials and ion beam conditions are detailed. Vertical bipolar integrated circuits can be made this way when the first opposite type conductivity region will function as a collector. Also circuits with inverted bipolar devices when this first region functions as a 'buried'' emitter region. (U.K.)

  9. Solution-Processable Low-Molecular Weight Extended Arylacetylenes: Versatile p-Type Semiconductors for Field-Effect Transistors and Bulk Heterojunction Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Silvestri, Fabio [Northwestern Univ., Evanston, IL (United States); ETH Zurich (Switzerland); Marrocchi, Assunta [Univ. of Perugia (Italy); Seri, Mirko [Univ. of Perugia (Italy); Kim, Choongik [Northwestern Univ., Evanston, IL (United States); Marks, Tobin J. [Northwestern Univ., Evanston, IL (United States); Facchetti, Antonio [Northwestern Univ., Evanston, IL (United States); Taticchi, Aldo [Univ. of Perugia (Italy)

    2010-04-08

    We report the synthesis and characterization of a series of five extended arylacetylenes, 9,10-bis-{[m,p-bis(hexyloxy)phenyl]ethynyl}-anthracene (A-P6t, 1), 9,10-bis-[(p-{[m,p-bis(hexyloxy) phenyl]ethynyl}phenyl)ethynyl]-anthracene (PA-P6t, 2), 4,7-bis-{[m,p-bis(hexyloxy)phenyl]ethynyl}-2,1,3-benzothiadiazole (BTZ-P6t, 5), 4,7-bis(5-{[m,p-bis(hexyloxy)phenyl]ethynyl}thien-2-yl)-2,1,3-benzothiadiazole (TBTZ-P6t, 6), and 7,7'-({[m,p-bis(hexyloxy)phenyl]ethynyl}-2,1,3-benzothiadiazol-4,4'-ethynyl)-2,5-thiophene (BTZT-P6t, 7), and two arylvinylenes, 9,10-bis-{(E)-[m,p-bis(hexyloxy)phenyl]vinyl}-anthracene (A-P6d, 3), 9,10-bis-[(E)-(p-{(E)-[m,p-bis(hexyloxy)phenyl]vinyl}phenyl)vinyl]-anthracene (PA-P6d, 4). Trends in optical absorption spectra and electrochemical redox processes are first described. Next, the thin-film microstructures and morphologies of films deposited from solution under various conditions are investigated, and organic field-effect transistors (OFETs) and bulk heterojunction photovoltaic (OPV) cells fabricated. We find that substituting acetylenic for olefinic linkers on the molecular cores significantly enhances device performance. OFET measurements reveal that all seven of the semiconductors are FET-active and, depending on the backbone architecture, the arylacetylenes exhibit good p-type mobilities (μ up to ~0.1 cm2 V-1 s-1) when optimum film microstructural order is achieved. OPV cells using [6,6]-phenyl C61-butyric acid methyl ester (PCBM) as the electron acceptor exhibit power conversion efficiencies (PCEs) up to 1.3% under a simulated AM 1.5 solar irradiation of 100 mW/cm2. These results demonstrate that arylacetylenes are promising hole-transport materials for p-channel OFETs and promising donors for organic solar cells applications. A direct correlation between OFET arylacetylene hole mobility and OPV performance is identified and analyzed.

  10. Monte Carlo Analysis of the Battery-Type High Temperature Gas Cooled Reactor

    Science.gov (United States)

    Grodzki, Marcin; Darnowski, Piotr; Niewiński, Grzegorz

    2017-12-01

    The paper presents a neutronic analysis of the battery-type 20 MWth high-temperature gas cooled reactor. The developed reactor model is based on the publicly available data being an `early design' variant of the U-battery. The investigated core is a battery type small modular reactor, graphite moderated, uranium fueled, prismatic, helium cooled high-temperature gas cooled reactor with graphite reflector. The two core alternative designs were investigated. The first has a central reflector and 30×4 prismatic fuel blocks and the second has no central reflector and 37×4 blocks. The SERPENT Monte Carlo reactor physics computer code, with ENDF and JEFF nuclear data libraries, was applied. Several nuclear design static criticality calculations were performed and compared with available reference results. The analysis covered the single assembly models and full core simulations for two geometry models: homogenous and heterogenous (explicit). A sensitivity analysis of the reflector graphite density was performed. An acceptable agreement between calculations and reference design was obtained. All calculations were performed for the fresh core state.

  11. Fast discharging homopolar drum-type generator with gas bearing and flexible copper-fiber brushes

    International Nuclear Information System (INIS)

    Kibardin, A.S.; Komin, A.V.; Sojkin, V.F.; Frolkin, V.I.

    1984-01-01

    The description and results of testing schock-excited homopolar generator (SEHG) with a drum-type rotor, a gas bearing and flexible copper-fiber brushes are presented. SEHG has a magnetic core with two excitation coils with the designed field of 1.8-2 T in the gap. The drum-type titanium rotor has 80 kg, is 0.5 m in diameter, 0.25 m length and 0.05 m thick. SEHG power is 3.6 MJ, overall dimensions are 0.8x1 m. Single- and double-row bearings, representing an aluminium shell of 15 mm thick, established inside an external backward current lead and isolated from it, are used to control serviceability of a radial gas-static bearing, which is a support for an SEHG rotor. The bearing surface was covered with the colloidal graphite and had one or two rows by 24 openings for swelling. Brush units represent a bronze brush ring, containing 44 copper-fiber brushes. Tests results confirm serviceability of copper-fiber brushes with quite large dimensions and permit to count on producing the 2.4 MA electric discharge and 12 ms pulse rise time

  12. Monte Carlo Analysis of the Battery-Type High Temperature Gas Cooled Reactor

    Directory of Open Access Journals (Sweden)

    Grodzki Marcin

    2017-12-01

    Full Text Available The paper presents a neutronic analysis of the battery-type 20 MWth high-temperature gas cooled reactor. The developed reactor model is based on the publicly available data being an ‘early design’ variant of the U-battery. The investigated core is a battery type small modular reactor, graphite moderated, uranium fueled, prismatic, helium cooled high-temperature gas cooled reactor with graphite reflector. The two core alternative designs were investigated. The first has a central reflector and 30×4 prismatic fuel blocks and the second has no central reflector and 37×4 blocks. The SERPENT Monte Carlo reactor physics computer code, with ENDF and JEFF nuclear data libraries, was applied. Several nuclear design static criticality calculations were performed and compared with available reference results. The analysis covered the single assembly models and full core simulations for two geometry models: homogenous and heterogenous (explicit. A sensitivity analysis of the reflector graphite density was performed. An acceptable agreement between calculations and reference design was obtained. All calculations were performed for the fresh core state.

  13. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    International Nuclear Information System (INIS)

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

  14. Zinc Alloys for the Fabrication of Semiconductor Devices

    Science.gov (United States)

    Ryu, Yungryel; Lee, Tae S.

    2009-01-01

    ZnBeO and ZnCdSeO alloys have been disclosed as materials for the improvement in performance, function, and capability of semiconductor devices. The alloys can be used alone or in combination to form active photonic layers that can emit over a range of wavelength values. Materials with both larger and smaller band gaps would allow for the fabrication of semiconductor heterostructures that have increased function in the ultraviolet (UV) region of the spectrum. ZnO is a wide band-gap material possessing good radiation-resistance properties. It is desirable to modify the energy band gap of ZnO to smaller values than that for ZnO and to larger values than that for ZnO for use in semiconductor devices. A material with band gap energy larger than that of ZnO would allow for the emission at shorter wavelengths for LED (light emitting diode) and LD (laser diode) devices, while a material with band gap energy smaller than that of ZnO would allow for emission at longer wavelengths for LED and LD devices. The amount of Be in the ZnBeO alloy system can be varied to increase the energy bandgap of ZnO to values larger than that of ZnO. The amount of Cd and Se in the ZnCdSeO alloy system can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped or can be p-type doped using selected dopant elements, or can be n-type doped using selected dopant elements. The layers and structures formed with both the ZnBeO and ZnCdSeO semiconductor alloys - including undoped, p-type-doped, and n-type-doped types - can be used for fabricating photonic and electronic semiconductor devices for use in photonic and electronic applications. These devices can be used in LEDs, LDs, FETs (field effect transistors), PN junctions, PIN junctions, Schottky barrier diodes, UV detectors and transmitters, and transistors and transparent transistors. They also can be used in applications for lightemitting display, backlighting for displays, UV and

  15. A Portable Array-Type Optical Fiber Sensing Instrument for Real-Time Gas Detection.

    Science.gov (United States)

    Hung, San-Shan; Chang, Hsing-Cheng; Chang, I-Nan

    2016-12-08

    A novel optical fiber array-type of sensing instrument with temperature compensation for real-time detection was developed to measure oxygen, carbon dioxide, and ammonia simultaneously. The proposed instrument is multi-sensing array integrated with real-time measurement module for portable applications. The sensing optical fibers were etched and polished before coating to increase sensitivities. The ammonia and temperature sensors were each composed of a dye-coated single-mode fiber with constructing a fiber Bragg grating and a long-period filter grating for detecting light intensity. Both carbon dioxide and oxygen sensing structures use multimode fibers where 1-hydroxy-3,6,8-pyrene trisulfonic acid trisodium salt is coated for carbon dioxide sensing and Tris(2,2'-bipyridyl) dichlororuthenium(II) hexahydrate and Tris(bipyridine)ruthenium(II) chloride are coated for oxygen sensing. Gas-induced fluorescent light intensity variation was applied to detect gas concentration. The portable gas sensing array was set up by integrating with photo-electronic measurement modules and a human-machine interface to detect gases in real time. The measured data have been processed using piecewise-linear method. The sensitivity of the oxygen sensor were 1.54%/V and 9.62%/V for concentrations less than 1.5% and for concentrations between 1.5% and 6%, respectively. The sensitivity of the carbon dioxide sensor were 8.33%/V and 9.62%/V for concentrations less than 2% and for concentrations between 2% and 5%, respectively. For the ammonia sensor, the sensitivity was 27.78%/V, while ammonia concentration was less than 2%.

  16. No Evidence of Circumstellar Gas Surrounding Type Ia Supernova SN 2017cbv

    Science.gov (United States)

    Ferretti, Raphael; Amanullah, Rahman; Bulla, Mattia; Goobar, Ariel; Johansson, Joel; Lundqvist, Peter

    2017-12-01

    Nearby type Ia supernovae (SNe Ia), such as SN 2017cbv, are useful events to address the question of what the elusive progenitor systems of the explosions are. Hosseinzadeh et al. suggested that the early blue excess of the light curve of SN 2017cbv could be due to the supernova ejecta interacting with a non-degenerate companion star. Some SN Ia progenitor models suggest the existence of circumstellar (CS) environments in which strong outflows create low-density cavities of different radii. Matter deposited at the edges of the cavities should be at distances at which photoionization due to early ultraviolet (UV) radiation of SNe Ia causes detectable changes to the observable Na I D and Ca II H&K absorption lines. To study possible narrow absorption lines from such material, we obtained a time series of high-resolution spectra of SN 2017cbv at phases between ‑14.8 and +83 days with respect to B-band maximum, covering the time at which photoionization is predicted to occur. Both narrow Na I D and Ca II H&K are detected in all spectra, with no measurable changes between the epochs. We use photoionization models to rule out the presence of Na I and Ca II gas clouds along the line of sight of SN 2017cbv between ∼8 × 1016–2 × 1019 cm and ∼1015–1017 cm, respectively. Assuming typical abundances, the mass of a homogeneous spherical CS gas shell with radius R must be limited to {M}{{H} {{I}}}{CSM}< 3× {10}-4× {(R/{10}17[{cm}])}2 {M}ȯ . The bounds point to progenitor models that deposit little gas in their CS environment.

  17. A Portable Array-Type Optical Fiber Sensing Instrument for Real-Time Gas Detection

    Directory of Open Access Journals (Sweden)

    San-Shan Hung

    2016-12-01

    Full Text Available A novel optical fiber array-type of sensing instrument with temperature compensation for real-time detection was developed to measure oxygen, carbon dioxide, and ammonia simultaneously. The proposed instrument is multi-sensing array integrated with real-time measurement module for portable applications. The sensing optical fibers were etched and polished before coating to increase sensitivities. The ammonia and temperature sensors were each composed of a dye-coated single-mode fiber with constructing a fiber Bragg grating and a long-period filter grating for detecting light intensity. Both carbon dioxide and oxygen sensing structures use multimode fibers where 1-hydroxy-3,6,8-pyrene trisulfonic acid trisodium salt is coated for carbon dioxide sensing and Tris(2,2′-bipyridyl dichlororuthenium(II hexahydrate and Tris(bipyridineruthenium(II chloride are coated for oxygen sensing. Gas-induced fluorescent light intensity variation was applied to detect gas concentration. The portable gas sensing array was set up by integrating with photo-electronic measurement modules and a human-machine interface to detect gases in real time. The measured data have been processed using piecewise-linear method. The sensitivity of the oxygen sensor were 1.54%/V and 9.62%/V for concentrations less than 1.5% and for concentrations between 1.5% and 6%, respectively. The sensitivity of the carbon dioxide sensor were 8.33%/V and 9.62%/V for concentrations less than 2% and for concentrations between 2% and 5%, respectively. For the ammonia sensor, the sensitivity was 27.78%/V, while ammonia concentration was less than 2%.

  18. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  19. Semiconductor Modeling Techniques

    CERN Document Server

    Xavier, Marie

    2012-01-01

    This book describes the key theoretical techniques for semiconductor research to quantitatively calculate and simulate the properties. It presents particular techniques to study novel semiconductor materials, such as 2D heterostructures, quantum wires, quantum dots and nitrogen containing III-V alloys. The book is aimed primarily at newcomers working in the field of semiconductor physics to give guidance in theory and experiment. The theoretical techniques for electronic and optoelectronic devices are explained in detail.

  20. Anomalous Charge Transport in Disordered Organic Semiconductors

    International Nuclear Information System (INIS)

    Muniandy, S. V.; Woon, K. L.; Choo, K. Y.

    2011-01-01

    Anomalous charge carrier transport in disordered organic semiconductors is studied using fractional differential equations. The connection between index of fractional derivative and dispersion exponent is examined from the perspective of fractional Fokker-Planck equation and its link to the continuous time random walk formalism. The fractional model is used to describe the bi-scaling power-laws observed in the time-of flight photo-current transient data for two different types of organic semiconductors.

  1. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  2. Emissions deterioration for three alternative fuel vehicle types: Natural gas, ethanol, and methanol vehicles

    International Nuclear Information System (INIS)

    Winebrake, J.J.; Deaton, M.L.

    1997-01-01

    Although there have been several studies examining emissions from in-use alternative fuel vehicles (AFVs), little is known about the deterioration of these emissions over vehicle lifetimes and how this deterioration compares with deterioration from conventional vehicles (CVs). This paper analyzes emissions data from 70 AFVs and 70 CVs operating in the federal government fleet to determine whether AFV emissions deterioration differs significantly from CV emissions deterioration. The authors conduct the analysis on three alternative fuel types (natural gas, methanol, and ethanol) and on five pollutants (carbon monoxide, carbon dioxide, total hydrocarbons, non-methane hydrocarbons, and nitrogen oxides). They find that for most cases they studied, deterioration differences are not statistically significant; however, several exceptions suggest that air quality planners and regulators must further analyze AFV emissions deterioration in order to properly include these technologies into broader air quality management schemes

  3. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  4. Influence of Viscosity and Surface Tension on Performance of Gas-Liqid Contactors with Ejector Type Gas Distributor

    Czech Academy of Sciences Publication Activity Database

    Elgozali, A.; Linek, V.; Fialová, Marie; Wein, Ondřej; Zahradník, Jindřich

    2002-01-01

    Roč. 57, č. 15 (2002), s. 2987-2994 ISSN 0009-2509 R&D Projects: GA ČR GA104/97/1170 Grant - others:INCO-COPERNICUS(XE) IC15-CT98-0502 Keywords : ejector gas distributor * hydrodynamics * mass transfer Subject RIV: CI - Industrial Chemistry, Chemical Engineering Impact factor: 1.224, year: 2002

  5. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  6. Structural Pre-sizing of a Coaxial Double-tube Type Hot Gas Duct

    Energy Technology Data Exchange (ETDEWEB)

    Song, Kee Nam; Kim, Y-W [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2008-10-15

    The nuclear hydrogen system being researched at KAERI is planning to produce hydrogen in the order of 950 .deg. C by using nuclear energy and a thermo-chemical process, and helium gas is tentatively considered as the choice for the coolant. A hot gas duct (HGD) is a key component connecting the reactor pressure vessel and the intermediate heat exchanger (IHX) for the nuclear hydrogen system. The HGD is a unique component exclusively found in an HTR-module concept where a nuclear core and IHX are placed separately into two pressure vessels, which require a connecting duct between them. A coaxial double-tube type cross vessel is considered for the HGD structure of the nuclear hydrogen system because of its successive extensive experience. In this study, a structural pre-sizing for the primary HGD was carried out. These activities include a predecision on the geometric dimensions, a pre-evaluation on the strength, and a pre-selection on the material of the coaxial double-tube type cross vessel components. A predecision on the geometric dimensions was undertaken based on various engineering concepts, such as a constant flow velocity (CFV) model, a constant flow rate (CFR) model, a constant hydraulic head (CHH) model, and finally a heat balanced (HB) model. For the CFV model, CFR model, and CHH model, the HGD structure might be insensitive to a flow induced vibration (FIV) in the case where there are no pressure differences between the hot and cold helium regions. Also we compared the geometric dimensions from the various models.

  7. Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

    Science.gov (United States)

    Freedsman, J. J.; Watanabe, A.; Urayama, Y.; Egawa, T.

    2015-09-01

    The authors report on Al2O3/Al0.85In0.15N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al2O3 as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al2O3/Al0.85In0.15N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

  8. Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

    International Nuclear Information System (INIS)

    Freedsman, J. J.; Watanabe, A.; Urayama, Y.; Egawa, T.

    2015-01-01

    The authors report on Al 2 O 3 /Al 0.85 In 0.15 N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al 2 O 3 as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al 2 O 3 /Al 0.85 In 0.15 N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics

  9. Solid-state NMR of inorganic semiconductors.

    Science.gov (United States)

    Yesinowski, James P

    2012-01-01

    Studies of inorganic semiconductors by solid-state NMR vary widely in terms of the nature of the samples investigated, the techniques employed to observe the NMR signal, and the types of information obtained. Compared with the NMR of diamagnetic non-semiconducting substances, important differences often result from the presence of electron or hole carriers that are the hallmark of semiconductors, and whose theoretical interpretation can be involved. This review aims to provide a broad perspective on the topic for the non-expert by providing: (1) a basic introduction to semiconductor physical concepts relevant to NMR, including common crystal structures and the various methods of making samples; (2) discussions of the NMR spin Hamiltonian, details of some of the NMR techniques and strategies used to make measurements and theoretically predict NMR parameters, and examples of how each of the terms in the Hamiltonian has provided useful information in bulk semiconductors; (3) a discussion of the additional considerations needed to interpret the NMR of nanoscale semiconductors, with selected examples. The area of semiconductor NMR is being revitalized by this interest in nanoscale semiconductors, the great improvements in NMR detection sensitivity and resolution that have occurred, and the current interest in optical pumping and spintronics-related studies. Promising directions for future research will be noted throughout.

  10. Transient photoconductivity in amorphous semiconductors

    International Nuclear Information System (INIS)

    Mpawenayo, P.

    1997-07-01

    Localized states in amorphous semiconductors are divided in disorder induced shallow trap levels and dangling bonds deep states. Dangling bonds are assumed here to be either neutral or charged and their energy distribution is a single gaussian. Here, it is shown analytically that transient photocurrent in amorphous semiconductors is fully controlled by charge carriers transitions between localized states for one part and tunneling hopping carriers on the other. Localized dangling bonds deep states act as non radiative recombination centres, while hopping tunnelling is assisted by the Coulomb interaction between defects sites. The half-width of defects distribution is the disorder parameter that determines the carrier hopping time between defects sites. The macroscopic time that explains the long decay response times observed will all types of amorphous semiconductors is duly thought to be temperature dependent. Basic equations developed by Longeaud and Kleider are solved for the general case of a semiconductor after photo-generation. It turns out that the transient photoconductivity decay has two components; one with short response times from carriers trap-release transitions between shallow levels and extended states and a hopping component made of inter-dependent exponentials whose time constants span in larger ranges depending on disorder. The photoconductivity hopping component appears as an additional term to be added to photocurrents derived from existing models. The results of the present study explain and complete the power law decay derived in the multiple trapping models developed 20 years ago only in the approximation of the short response time regime. The long response time regime is described by the hopping macroscopic time. The present model is verified for all samples of amorphous semiconductors known so far. Finally, it is proposed to improved the modulated photoconductivity calculation techniques by including the long-lasting hopping dark documents

  11. Synthesis and characterization of metal oxide semiconductors by a facile co-electroplating-annealing method and formation of ZnO/CuO pn heterojunctions with rectifying behavior

    Science.gov (United States)

    Turkdogan, Sunay; Kilic, Bayram

    2018-01-01

    We have developed a unique growth method and demonstrated the growth of CuO and ZnO semiconductor materials and the fabrication of their pn heterojunctions in ambient atmosphere. The pn heterojunctions were constructed using inherently p-type CuO and inherently n-type ZnO materials. Both p- and n-type semiconductors and pn heterojunctions were prepared using a simple but versatile growth method that relies on the transformation of electroplated Cu and Zn metals into CuO and ZnO semiconductors, respectively and is capable of a large-scale production desired in most of the applications. The structural, chemical, optical and electrical properties of the materials and junctions were investigated using various characterization methods and the results show that our growth method, materials and devices are quite promising to be utilized for various applications including but not limited to solar cells, gas/humidity sensors and photodetectors.

  12. Taurine alters respiratory gas exchange and nutrient metabolism in type 2 diabetic rats.

    Science.gov (United States)

    Harada, Nagakatsu; Ninomiya, Chika; Osako, Yoshie; Morishima, Masaki; Mawatari, Kazuaki; Takahashi, Akira; Nakaya, Yutaka

    2004-07-01

    To assess the effect of taurine supplementation on respiratory gas exchange, which might reflect the improved metabolism of glucose and/or lipid in the type 2 diabetic Otsuka Long-Evans Tokushima Fatty (OLETF) rats. Male OLETF rats (16 weeks of age) were randomly divided into two groups: unsupplemented group and taurine-supplemented (3% in drinking water) group. After 9 weeks of treatment, indirect calorimetry and insulin tolerance tests were conducted. The amounts of visceral fat pads, tissue glycogen, the blood concentrations of glucose, triacylglycerol, taurine, and electrolytes, and the level of hematocrit were compared between groups. A nondiabetic rat strain (Long-Evans Tokushima Otsuka) was used as the age-matched normal control. The indirect calorimetry showed that the treatment of OLETF rats with taurine could reduce a part of postprandial glucose oxidation possibly responsible for the increase of triacylglycerol synthesis in the body. Taurine supplementation also improved hyperglycemia and insulin resistance and increased muscle glycogen content in the OLETF rats. Supplementation with taurine increased the blood concentration of taurine and electrolyte and fluid volume, all of which were considered to be related to the improvement of metabolic disturbance in OLETF rats. Taurine supplementation may be an effective treatment for glucose intolerance and fat/lipid accumulation observed in type 2 diabetes associated with obesity. These metabolic changes might be ascribed, in part, to the alteration of circulating blood profiles, where the improved hyperglycemia and/or the blood accumulation of taurine itself would play roles. Copyright 2004 NAASO

  13. Analysis of galanthamine-type alkaloids by capillary gas chromatography-mass spectrometry in plants.

    Science.gov (United States)

    Berkov, Strahil; Bastida, Jaume; Viladomat, Francesc; Codina, Carles

    2008-01-01

    Galanthamine, an acetylcholinesterase inhibitor used for the treatment of Alzheimer's disease, and galanthamine-type alkaloids are synthesised in different plants of the family Amaryllidaceae. A capillary gas chromatographic-mass spectroscopic (CGC-MS) method for the separation of 7 galanthamine type alkaloids, including galanthamine and epigalanthamine, is described in the present paper. A simple method for the routine quantification of galanthamine in plants was developed using pre-packed columns with diatomaceous earth (Isolute HM-N), allowing simultaneous preparation of a large number of samples. Galanthamine showed excellent linearity in the range from 50 to 1000 microg/mL and the limit of quantification was 5 microg/mL in total ion current mode and 1.6 ng/mL in selected ion monitoring mode. The recovery of galanthamine was more than 90%. Interday reproducibility (RSD) of the extraction was 2.74%. A method to find and to microextract Amaryllidaceae alkaloids in low-mass plant samples is also described.

  14. Semiconductor Research Experimental Techniques

    CERN Document Server

    Balkan, Naci

    2012-01-01

    The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys. The emphasis is on the technique rather than on the particular system studied.

  15. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz nonlinear...

  16. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  17. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  18. Heteroepitaxy of semiconductors theory, growth, and characterization

    CERN Document Server

    Ayers, John E

    2007-01-01

    Heteroepitaxy has evolved rapidly in recent years. With each new wave of material/substrate combinations, our understanding of how to control crystal growth becomes more refined. Most books on the subject focus on a specific material or material family, narrowly explaining the processes and techniques appropriate for each. Surveying the principles common to all types of semiconductor materials, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization is the first comprehensive, fundamental introduction to the field. This book reflects our current understanding of nucleation, growth modes, relaxation of strained layers, and dislocation dynamics without emphasizing any particular material. Following an overview of the properties of semiconductors, the author introduces the important heteroepitaxial growth methods and provides a survey of semiconductor crystal surfaces, their structures, and nucleation. With this foundation, the book provides in-depth descriptions of mismatched heteroepitaxy and la...

  19. Life-cycle assessment of semiconductors

    CERN Document Server

    Boyd, Sarah B

    2012-01-01

    Life-Cycle Assessment of Semiconductors presents the first and thus far only available transparent and complete life cycle assessment of semiconductor devices. A lack of reliable semiconductor LCA data has been a major challenge to evaluation of the potential environmental benefits of information technologies (IT). The analysis and results presented in this book will allow a higher degree of confidence and certainty in decisions concerning the use of IT in efforts to reduce climate change and other environmental effects. Coverage includes but is not limited to semiconductor manufacturing trends by product type and geography, unique coverage of life-cycle assessment, with a focus on uncertainty and sensitivity analysis of energy and global warming missions for CMOS logic devices, life cycle assessment of flash memory and life cycle assessment of DRAM. The information and conclusions discussed here will be highly relevant and useful to individuals and institutions. The book also: Provides a detailed, complete a...

  20. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  1. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  2. Spectroscopic analysis of optoelectronic semiconductors

    CERN Document Server

    Jimenez, Juan

    2016-01-01

    This book deals with standard spectroscopic techniques which can be used to analyze semiconductor samples or devices, in both, bulk, micrometer and submicrometer scale. The book aims helping experimental physicists and engineers to choose the right analytical spectroscopic technique in order to get specific information about their specific demands. For this purpose, the techniques including technical details such as apparatus and probed sample region are described. More important, also the expected outcome from experiments is provided. This involves also the link to theory, that is not subject of this book, and the link to current experimental results in the literature which are presented in a review-like style. Many special spectroscopic techniques are introduced and their relationship to the standard techniques is revealed. Thus the book works also as a type of guide or reference book for people researching in optical spectroscopy of semiconductors.

  3. Semiconductor electrolyte photovoltaic energy converter

    Science.gov (United States)

    Anderson, W. W.; Anderson, L. B.

    1975-01-01

    Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

  4. Carrier concentration induced ferromagnetism in semiconductors

    International Nuclear Information System (INIS)

    Story, T.

    2007-01-01

    In semiconductor spintronics the key materials issue concerns ferromagnetic semiconductors that would, in particular, permit an integration (in a single multilayer heterostructure) of standard electronic functions of semiconductors with magnetic memory function. Although classical semiconductor materials, such as Si or GaAs, are nonmagnetic, upon substitutional incorporation of magnetic ions (typically of a few atomic percents of Mn 2+ ions) and very heavy doping with conducting carriers (at the level of 10 20 - 10 21 cm -3 ) a ferromagnetic transition can be induced in such diluted magnetic semiconductors (also known as semimagnetic semiconductors). In the lecture the spectacular experimental observations of carrier concentration induced ferromagnetism will be discussed for three model semiconductor crystals. p - Ga 1-x Mn x As currently the most actively studied and most perspective ferromagnetic semiconductor of III-V group, in which ferromagnetism appears due to Mn ions providing both local magnetic moments and acting as acceptor centers. p - Sn 1-x Mn x Te and p - Ge 1-x Mn x Te classical diluted magnetic semiconductors of IV-VI group, in which paramagnet-ferromagnet and ferromagnet-spin glass transitions are found for very high hole concentration. n - Eu 1-x Gd x Te mixed magnetic crystals, in which the substitution of Gd 3+ ions for Eu 2+ ions creates very high electron concentration and transforms antiferromagnetic EuTe (insulating compound) into ferromagnetic n-type semiconductor alloy. For each of these materials systems the key physical features will be discussed concerning: local magnetic moments formation, magnetic phase diagram as a function of magnetic ions and carrier concentration as well as Curie temperature and magnetic anisotropy engineering. Various theoretical models proposed to explain the effect of carrier concentration induced ferromagnetism in semiconductors will be briefly discussed involving mean field approaches based on Zener and RKKY

  5. A computer-assisted rock type data catalogue for gas formations; Ein rechnergestuetzter Gesteinsdatenkatalog fuer Gasformationen

    Energy Technology Data Exchange (ETDEWEB)

    Reitenbach, V.; Pusch, G.; Moeller, M.; Koll, S. [TU Clausthal (Germany). Inst. fuer Erdoel- und Erdgastechnik; Constantini, A.; Junker, A.; Anton, H. [RWE Dea AG, Hamburg (Germany)

    2007-09-13

    Modern reservoir management commonly requires versatile reservoir data which are neces-sary for integrated reservoir characterization, evaluation and development planning. The rock data necessary for numerical reservoir simulation studies often have to be collected from different sources, analysed and sorted with a considerable effort. In a framework of DGMK research program (DGMK project 593-9/4), the Institute of Petro-leum Engineering (Clausthal University of Technology) and RWE DEA AG have developed a new tool named Rock Data Catalogue, which is capable of managing large amounts of rock data more efficiently and deriving new specific correlations for European rock types. The use of Rock Data Catalogue can facilitate the essential input data generation and proc-essing procedure for reservoir simulation studies. The Rock Data Catalogue is comprised of a Data Base Module of digitalized reservoir rock data and an interactive Data Correlation Module. Both modules are built-up as an interface to common reservoir simulation software. The universal structure of the software also makes it possible to exchange the data with other rock data information systems. The Data Correlation Module implements a ''Decision-Structure'' module, which helps the reservoir engineer to select the rock data for analysis and correlation depending on its litho-facial type and permeability class. The Data Base Module enables a quick search of appro-priated data sets and their export into the correlation module. The open source data of the North German Rotliegend gas formations as well as the data of measurements on Rotliegend core samples performed at the ITE in course of the DGMK tight gas projects were implemented in the rock data base. Correlations of poro/perm data, two-phase flow and capillary pressure functions of the Rotliegend sandstones with the per-meability range between 20 and 0.01 mD are implemented in the rock data base and serve for quality checking of the

  6. Revised diode equation for Ideal Graphene-Semiconductor Schottky Junction

    OpenAIRE

    Liang, Shi-Jun; Ang, Lay Kee

    2015-01-01

    In this paper we carry out a theoretical and experimental study of the nature of graphene/semiconductor Schottky contact. We present a simple and parameter-free carrier transport model of graphene/semiconductor Schottky contact derived from quantum statistical theory, which is validated by the quantum Landauer theory and first-principle calculations. The proposed model can well explain experimental results for samples of different types of graphene/semiconductor Schottky contact.

  7. Effect of gas type on foam film permeability and its implications for foam flow in porous media.

    Science.gov (United States)

    Farajzadeh, R; Muruganathan, R M; Rossen, W R; Krastev, R

    2011-10-14

    The aim of this paper is to provide a perspective on the effect of gas type on the permeability of foam films stabilized by different types of surfactant and to present a critical overview of the tracer gas experiments, which is the common approach to determine the trapped fraction of foam in porous media. In these experiments some part of the gas is replaced by a "tracer gas" during the steady-state stage of the experiments and trapped fraction of foam is determined by fitting the effluent data to a capacitance mass-transfer model. We present the experimental results on the measurement of the gas permeability of foam films stabilized with five surfactants (non-ionic, anionic and cationic) and different salt concentrations. The salt concentrations assure formation of either common black (CBF) or Newton black films (NBF). The experiments are performed with different single gasses. The permeability of the CBF is in general higher than that of the NBF. This behavior is explained by the higher density of the surfactant molecules in the NBF compared to that of CBF. It is also observed that the permeability coefficient, K(cm/s), of CBF and NBF for non-ionic and cationic surfactants are similar and K is insensitive to film thickness. Compared to anionic surfactants, the films made by the non-ionic surfactant have much lower permeability while the films made by the cationic surfactant have larger permeability. This conclusion is valid for all gasses. For all types of surfactant the gas permeability of foam film is largely dependent on the dissolution of gas in the surfactant solution and increases with increasing gas solubility in the bulk liquid. The measured values of K are consistent with rapid diffusion of tracer gasses through trapped gas adjacent to flowing gas in porous media, and difficulties in interpreting the results of tracer-foam experiments with conventional capacitance models. The implications of the results for foam flow in porous media and factors leading

  8. Metal-Semiconductor Contacts

    Science.gov (United States)

    Pugh, D. I.

    Metal-semiconductor contacts display a range of electrical characteristics from strongly rectifying to ohmic, each having its own applications. The rectifying properties of metal points on metallic sulphides were used extensively as detectors in early radio experiments, while during the second world war the rectifying point contact diode became important as a frequency detector and low level microwave radar detector [1]. Since 1945 the development of metal semiconductor contacts has been stimulated by the intense activity in the field of semiconductor physics and has remained vital in the ohmic connection of semiconductor devices with the outside world. The developments in surface science and the increased use of Schottky barriers in microelectronics has lead to much research with the aim of obtaining a full understanding of the physics of barrier formation and of current transport across the metal-semiconductor interface. Large gain spin electronic devices are possible with appropriate designs by incorporating ferromagnetic layers with semiconductors such as silicon [2]. This inevitably leads to metal-semiconductor contacts, and the impact of such junctions on the device must be considered. In this section we aim to look simply at the physical models that can be used to understand the electrical properties that can arise from these contacts, and then briefly discuss how deviations of these models can occur in practical junctions.

  9. EDITORIAL: Oxide semiconductors

    Science.gov (United States)

    Kawasaki, M.; Makino, T.

    2005-04-01

    Blue or ultraviolet semiconducting light-emitting diodes have the potential to revolutionize illumination systems in the near-future. Such industrial need has propelled the investigation of several wide-gap semiconducting materials in recent years. Commercial applications include blue lasers for DVD memory and laser printers, while military applications are also expected. Most of the material development has so far been focused on GaN (band gap 3.5 eV at 2 K), and ZnSe (2.9 eV) because these two representative direct transition semiconductors are known to be bright emitting sources. GaN and GaN-based alloys are emerging as the winners in this field because ZnSe is subject to defect formation under high current drive. On the other hand, another II-VI compound, ZnO, has also excited substantial interest in the optoelectronics-oriented research communities because it is the brightest emitter of all, owing to the fact that its excitons have a 60 meV binding energy. This is compared with 26 meV for GaN and 20 meV for ZnSe. The stable excitons could lead to laser action based on their recombination even at temperatures well above room temperature. ZnO has additional major properties that are more advantageous than other wide-gap materials: availability of large area substrates, higher energy radiation stability, environmentally-friendly ingredients, and amenability to wet chemical etching. However, ZnO is not new to the semiconductor field as exemplified by several studies made during the 1960s on structural, vibrational, optical and electrical properties (Mollwo E 1982 Landolt-Boernstein New Series vol 17 (Berlin: Springer) p 35). In terms of devices, the luminescence from light-emitting diode structures was demonstrated in which Cu2O was used as the p-type material (Drapak I T 1968 Semiconductors 2 624). The main obstacle to the development of ZnO has been the lack of reproducible p-type ZnO. The possibility of achieving epitaxial p-type layers with the aid of thermal

  10. The study on a gas-coupled two-stage stirling-type pulse tube cryocooler

    Science.gov (United States)

    Wu, X. L.; Chen, L. B.; Zhu, X. S.; Pan, C. Z.; Guo, J.; Wang, J. J.; Zhou, Y.

    2017-12-01

    A two-stage gas-coupled Stirling-type pulse tube cryocooler (SPTC) driven by a linear dual-opposed compressor has been designed, manufactured and tested. Both of the stages adopted coaxial structure for compactness. The effect of a cold double-inlet at the second stage on the cooling performance was investigated. The test results show that the cold double-inlet will help to achieve a lower cooling temperature, but it is not conducive to achieving a higher cooling capacity. At present, without the cold double-inlet, the second stage has achieved a no-load temperature of 11.28 K and a cooling capacity of 620 mW/20 K with an input electric power of 450 W. With the cold double-inlet, the no-load temperature is lowered to 9.4 K, but the cooling capacity is reduced to 400 mW/20 K. The structure of the developed cryocooler and the influences of charge pressure, operating frequency and hot end temperature will also be introduced in this paper.

  11. Characterization of gas tunnel type plasma sprayed hydroxyapatite-nanostructure titania composite coatings

    Science.gov (United States)

    Yugeswaran, S.; Kobayashi, A.; Ucisik, A. Hikmet; Subramanian, B.

    2015-08-01

    Hydroxyapatite (HA) can be coated onto metal implants as a ceramic biocompatible coating to bridge the growth between implants and human tissue. Meanwhile many efforts have been made to improve the mechanical properties of the HA coatings without affecting its bioactivity. In the present study, nanostructure titania (TiO2) was mixed with HA powder and HA-nanostructure TiO2 composite coatings were produced by gas tunnel type plasma spraying torch under optimized spraying conditions. For this purpose, composition of 10 wt% TiO2 + 90 wt% HA, 20 wt% TiO2 + 80 wt% HA and 30 wt% TiO2 + 70 wt% HA were selected as the feedstock materials. The phase, microstructure and mechanical properties of the coatings were characterized. The obtained results validated that the increase in weight percentage of nanostructure TiO2 in HA coating significantly increased the microhardness, adhesive strength and wear resistance of the coatings. Analysis of the in vitro bioactivity and cytocompatibility of the coatings were done using conventional simulated body fluid (c-SBF) solution and cultured green fluorescent protein (GFP) labeled marrow stromal cells (MSCs) respectively. The bioactivity results revealed that the composite coating has bio-active surface with good cytocompatibility.

  12. Recommended safety procedures for the selection and use of demonstration-type gas discharge devices in schools

    International Nuclear Information System (INIS)

    1979-01-01

    A 1972 survey of 30 Ottawa secondary schools revealed a total of 347 actual or potential X-ray sources available in these schools. More than half of these sources were gas discharge tubes. Some gas discharge tubes, in particular the cold cathode type, can emit X-rays at significantly high levels. Unless such tubes are used carefully, and with regard for good radiation safety practices, they can result in exposures to students that are in excess of the maximum levels recommended by the International Commission on Radiological Protection. Several cases of the recommended dose being exceeded were found in the classes surveyed. This document has been prepared to assist science teachers and others using demonstration-type gas discharge devices to select and use such devices so as to present negligible risk to themselves and students. Useful information on safety procedures to be followed when performing demonstrations or experiments is included. (J.T.A.)

  13. Enhanced two dimensional electron gas transport characteristics in Al{sub 2}O{sub 3}/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

    Energy Technology Data Exchange (ETDEWEB)

    Freedsman, J. J., E-mail: freedy54@gmail.com; Watanabe, A.; Urayama, Y. [Research Center for Nano-Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Egawa, T., E-mail: egawa.takashi@nitech.ac.jp [Research Center for Nano-Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan)

    2015-09-07

    The authors report on Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al{sub 2}O{sub 3} as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

  14. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  15. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  16. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  17. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  18. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  19. Optoelectronics with 2D semiconductors

    Science.gov (United States)

    Mueller, Thomas

    2015-03-01

    Two-dimensional (2D) atomic crystals, such as graphene and layered transition-metal dichalcogenides, are currently receiving a lot of attention for applications in electronics and optoelectronics. In this talk, I will review our research activities on electrically driven light emission, photovoltaic energy conversion and photodetection in 2D semiconductors. In particular, WSe2 monolayer p-n junctions formed by electrostatic doping using a pair of split gate electrodes, type-II heterojunctions based on MoS2/WSe2 and MoS2/phosphorene van der Waals stacks, 2D multi-junction solar cells, and 3D/2D semiconductor interfaces will be presented. Upon optical illumination, conversion of light into electrical energy occurs in these devices. If an electrical current is driven, efficient electroluminescence is obtained. I will present measurements of the electrical characteristics, the optical properties, and the gate voltage dependence of the device response. In the second part of my talk, I will discuss photoconductivity studies of MoS2 field-effect transistors. We identify photovoltaic and photoconductive effects, which both show strong photoconductive gain. A model will be presented that reproduces our experimental findings, such as the dependence on optical power and gate voltage. We envision that the efficient photon conversion and light emission, combined with the advantages of 2D semiconductors, such as flexibility, high mechanical stability and low costs of production, could lead to new optoelectronic technologies.

  20. Comparison of an Electronic Nose Based on Ultrafast Gas Chromatography, Comprehensive Two-Dimensional Gas Chromatography, and Sensory Evaluation for an Analysis of Type of Whisky

    Directory of Open Access Journals (Sweden)

    Paulina Wiśniewska

    2017-01-01

    Full Text Available Whisky is one of the most popular alcoholic beverages. There are many types of whisky, for example, Scotch, Irish, and American whisky (called bourbon. The whisky market is highly diversified, and, because of this, it is important to have a method which would enable rapid quality evaluation and authentication of the type of whisky. The aim of this work was to compare 3 methods: an electronic nose based on the technology of ultrafast gas chromatography (Fast-GC, comprehensive two-dimensional gas chromatography (GC × GC, and sensory evaluation. The selected whisky brands included 6 blended whiskies from Scotland, 4 blended whiskies from Ireland, and 4 bourbons produced in the USA. For data analysis, peak heights of chromatograms were used. The panelists who took part in sensory evaluations included 4 women and 4 men. The obtained data were analyzed by 2 chemometric methods: partial least squares discriminant analysis (PLS-DA and discrimination function analysis (DFA. E-nose and GC × GC allowed for differentiation between whiskies by type. Sensory analysis did not allow for differentiation between whiskies by type, but it allowed giving consumer preferences.

  1. Hydrogen in anion vacancies of semiconductors

    Science.gov (United States)

    Du, Mao-Hua; Singh, David

    2009-03-01

    Hydrogen typically terminates the dangling bonds around vacancies in semiconductors, thereby, partially or completely passivating the vacancies. However, it has been shown recently that hydrogen in anion vacancies of many semiconductors, such as ZnO, MgO, InN, SnO2, and GaN, takes multi-coordinated structures and acts as shallow donors, providing n-type conductivity to the materials. We study the hydrogen in the anion vacancies of a series of II-VI and III-V semiconductors using density functional calculations. The results on these materials show that, in the anion vacancies of polar II-VI semiconductors, the hydrogen is usually anionic and is coordinated with more than one cation atoms as a result of the relatively high ionicity of the host materials. The hydrogen coordination number depends on the host anion size. On the other hand, in more covalent semiconductors such as some III-V semiconductors, the single cation-H bonding configuration may become most stable. In the anion vacancies of ZnX and CdX where X represents anions, hydrogen is typically amphoteric except for oxides, in which the small anion size prohibits the formation of the cation-cation bond that is required for the acceptor configuration.

  2. Semiconductor film Cherenkov lasers

    Science.gov (United States)

    Walsh, John E.

    1994-12-01

    The technical achievements for the project 'Semiconductor Film Cherenkov Lasers' are summarized. Described in the fourteen appendices are the operation of a sapphire Cherenkov laser and various grating-coupled oscillators. These coherent radiation sources were operated over the spectral range extending from 3 mm down to 400 micrometers. The utility of various types of open, multi-grating resonators and mode-locked operation were also demonstrated. In addition to these experiments, which were carried out with a 10-100 kV pulse generator, a low-energy (3-3.6 MeV) Van de Graaff generator and a low-energy RF linac (2.8 MeV) were used to investigate the properties of continuum incoherent Smith-Purcell radiation. It was shown that levels of intensity comparable to the infrared beam lines on a synchrotron could be obtained and thus that grating-coupled sources are potentially an important new source for Fourier transform spectroscopy. Finally, a scanning electron microscope was adapted for investigating mu-electron-beam-driven far-infrared sources. At the close of the project, spontaneous emission over the 288-800 micrometers band had been observed. Intensity levels were in accord with expectations based on theory. One or more of the Appendices address these topics in detail.

  3. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  4. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, E.E.

    2004-11-15

    A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.

  5. Semiconductor nuclear detectors

    International Nuclear Information System (INIS)

    Schaub, Bernard

    1976-01-01

    Three semiconductors are nowadays available for nuclear detection (germanium, mercury iodide, cadmium telluride). Their methods of elaboration are briefly described and, as a conclusion, a very close at-hand development of cadmium telluride is foreseen [fr

  6. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  7. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  8. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  9. Beat-wave generation of plasmons in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1995-08-01

    It is shown that in semiconductor plasmas, it is possible to generate large amplitude plasma waves by the beating of two laser beams with frequency difference close to the plasma frequency. For narrow gap semiconductor (for example n-type InSb), the system can simulate the physics underlying beat wave generation in relativistic gaseous plasmas. (author). 7 refs

  10. Bistable amphoteric centers in semiconductors

    International Nuclear Information System (INIS)

    Nikitina, A. G.; Zuev, V. V.

    2008-01-01

    It is shown that, at thermodynamic equilibrium, the release of charge carriers from the localized states of bistable amphoteric centers into quasi-free states depends on the degree of compensation. This brings about different functional dependences of the concentration of free charge carriers on temperature. It is found that, in uncompensated semiconductors, the concentration of free charge carriers follows the same dependence in the case of bistable amphoteric centers and bistable amphoteric U - centers, although the distributions of charge carriers over the charge states and configurations are different for these types of centers. The results can be used for interpreting various experimental data insufficiently explained in the context of the traditional approach

  11. Separation of Gas Mixtures by New Type of Membranes – Dynamic Liquid Membranes.

    Czech Academy of Sciences Publication Activity Database

    Setničková, Kateřina; Šíma, Vladimír; Petričkovič, Roman; Řezníčková Čermáková, Jiřina; Uchytil, Petr

    2016-01-01

    Roč. 160, FEB 29 (2016), s. 132-135 ISSN 1383-5866 Institutional support: RVO:67985858 Keywords : gas separation * liquid membrane * methane Subject RIV: CI - Industrial Chemistry, Chemical Engineering Impact factor: 3.359, year: 2016

  12. New Icosahedral Boron Carbide Semiconductors

    Science.gov (United States)

    Echeverria Mora, Elena Maria

    Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto

  13. Volatile organometallic and semiconductor materials

    International Nuclear Information System (INIS)

    Dickson, R.S.

    1991-01-01

    This article reports on a project concerned with the metal organic chemical vapour deposition (MOCVD) of mercury-cadmium telluride (MCT) undertaken by a research consortium based in the Clayton area involving Monash University Chemistry Department, Telecom Research Laboratories, and CSIRO Division of Material Sciences and Technology. An M.R. Semicon 226 MOCVD reactor, operating near atmospheric presure with hydrogen carrier gas has been used. Most applications of MCT are direct consequence of its responsiveness to radiation in infrared region spectrum. The main aims of the project were to prepare and assess a range of volatile organometallics that might find use as a dopant sources for MCT, to prepare and study the properties of a range of different lanthanide complexes for MOCVD applications and to fully characterize the semiconductor wafers after growth. 19 refs., 3 figs

  14. Determination of gas phase triacetone triperoxide with aspiration ion mobility spectrometry and gas chromatography-mass spectrometry.

    Science.gov (United States)

    Räsänen, Riikka-Marjaana; Nousiainen, Marjaana; Peräkorpi, Kaleva; Sillanpää, Mika; Polari, Lauri; Anttalainen, Osmo; Utriainen, Mikko

    2008-08-08

    Aspiration ion mobility spectrometry (IMS) has been used for the first time to screen 3,3,6,6,9,9-hexamethyl-1,2,4,5,7,8-hexaoxacyclononane explosive, the most commonly known as triacetone triperoxide (TATP). Gaseous TATP was generated from synthesized solid compound, sublimed and directed to a portable chemical detection system comprised of an aspiration-type IMS detector and six semiconductor sensors. Different unknown TATP gas phase concentrations were produced and corresponding IMS and semiconductor responses were measured. The experimental concentrations were determined by gas chromatography-mass spectrometry (GC-MS). The results evidenced that the monitored compound in the gas phase was TATP. In addition, the determined TATP concentrations and corresponding IMS intensities showed that the IMS response values were proportional to the measured TATP concentrations.

  15. Room-temperature semiconductors and scintillators for planetary instruments

    CERN Document Server

    Schweitzer, J S

    1999-01-01

    Room temperature semiconductors introduce some exciting potential for use in instruments designed for planetary measurements. It is important, however, to consider carefully the different types of measurement environments. In some cases room temperature semiconductors provide significant advantages over scintillators, while in some cases scintillators still have advantages over room temperature semiconductors. A number of instrumentation applications for detecting X-rays and gamma rays are considered. By focusing on the physical properties of both types of detectors, it is possible to better understand how each type of detector can best be used for measurements from satellites and directly on planetary bodies.

  16. Fluid dynamic study of a new type of solid-gas contactor: the fluidized/fixed or fluidized bed

    Energy Technology Data Exchange (ETDEWEB)

    Corella, J.; Bilbao, R.

    1982-10-01

    A fluid dynamic study of a new type of solid-gas contactor has been realized. This contactor consists of a fluidized bed with a considerable enlargement of the cross section of its upper zone. This enlargement of section results in a reduction of the gas velocity in the upper zone, with a subsequent bubbling diminution. Experiments have been performed varying the scale of the contactor, its geometry, the relation between the cross sections of the upper and lower zones of the contactor, the solid height in the upper zone, and the density and size of the solid. The study has been centered on the contactor behavior with variation of the inlet gas velocity, on the bubble size distribution along the contactor, on the determination of the gas pressure drop in the whole contactor and in each zone of the bed, and on the calculation of the gas velocities modifying the state of the contactor (u /SUB r/, u /SUB c/, u /SUB mf/).

  17. Preparative semiconductor photoredox catalysis: An emerging theme in organic synthesis.

    Science.gov (United States)

    Manley, David W; Walton, John C

    2015-01-01

    Heterogeneous semiconductor photoredox catalysis (SCPC), particularly with TiO2, is evolving to provide radically new synthetic applications. In this review we describe how photoactivated SCPCs can either (i) interact with a precursor that donates an electron to the semiconductor thus generating a radical cation; or (ii) interact with an acceptor precursor that picks up an electron with production of a radical anion. The radical cations of appropriate donors convert to neutral radicals usually by loss of a proton. The most efficient donors for synthetic purposes contain adjacent functional groups such that the neutral radicals are resonance stabilized. Thus, ET from allylic alkenes and enol ethers generated allyl type radicals that reacted with 1,2-diazine or imine co-reactants to yield functionalized hydrazones or benzylanilines. SCPC with tertiary amines enabled electron-deficient alkenes to be alkylated and furoquinolinones to be accessed. Primary amines on their own led to self-reactions involving C-N coupling and, with terminal diamines, cyclic amines were produced. Carboxylic acids were particularly fruitful affording C-centered radicals that alkylated alkenes and took part in tandem addition cyclizations producing chromenopyrroles; decarboxylative homo-dimerizations were also observed. Acceptors initially yielding radical anions included nitroaromatics and aromatic iodides. The latter led to hydrodehalogenations and cyclizations with suitable precursors. Reductive SCPC also enabled electron-deficient alkenes and aromatic aldehydes to be hydrogenated without the need for hydrogen gas.

  18. Preparative semiconductor photoredox catalysis: An emerging theme in organic synthesis

    Directory of Open Access Journals (Sweden)

    David W. Manley

    2015-09-01

    Full Text Available Heterogeneous semiconductor photoredox catalysis (SCPC, particularly with TiO2, is evolving to provide radically new synthetic applications. In this review we describe how photoactivated SCPCs can either (i interact with a precursor that donates an electron to the semiconductor thus generating a radical cation; or (ii interact with an acceptor precursor that picks up an electron with production of a radical anion. The radical cations of appropriate donors convert to neutral radicals usually by loss of a proton. The most efficient donors for synthetic purposes contain adjacent functional groups such that the neutral radicals are resonance stabilized. Thus, ET from allylic alkenes and enol ethers generated allyl type radicals that reacted with 1,2-diazine or imine co-reactants to yield functionalized hydrazones or benzylanilines. SCPC with tertiary amines enabled electron-deficient alkenes to be alkylated and furoquinolinones to be accessed. Primary amines on their own led to self-reactions involving C–N coupling and, with terminal diamines, cyclic amines were produced. Carboxylic acids were particularly fruitful affording C-centered radicals that alkylated alkenes and took part in tandem addition cyclizations producing chromenopyrroles; decarboxylative homo-dimerizations were also observed. Acceptors initially yielding radical anions included nitroaromatics and aromatic iodides. The latter led to hydrodehalogenations and cyclizations with suitable precursors. Reductive SCPC also enabled electron-deficient alkenes and aromatic aldehydes to be hydrogenated without the need for hydrogen gas.

  19. Semiconductor devices for all-optical regeneration

    DEFF Research Database (Denmark)

    Öhman, Filip; Bischoff, Svend; Tromborg, Bjarne

    2003-01-01

    We review different implementations of semiconductor devices for all-optical regeneration. A general model will be presented for all-optical regeneration in fiber links, taking into consideration the trade-off between non-linearity and noise. Furthermore we discuss a novel regenerator type, based...

  20. Hyperentangled photon sources in semiconductor waveguides

    DEFF Research Database (Denmark)

    Kang, Dongpeng; Helt, L. G.; Zhukovsky, Sergei

    2014-01-01

    We propose and analyze the performance of a technique to generate mode and polarization hyperentangled photons in monolithic semiconductor waveguides using two concurrent type-II spontaneous parametric down-conversion (SPDC) processes. These two SPDC processes are achieved by waveguide engineering...

  1. A hybrid semiconductor-glass waveguide laser

    NARCIS (Netherlands)

    Fan, Y.; Oldenbeuving, R.M.; Klein, E.J.; Lee, C.J.; Song, H.; Khan, M.R.H.; Offerhaus, H.L.; Van der Slot, P.J.M.; Boller, K.J.

    2014-01-01

    We report on a novel type of laser in which a semiconductor optical amplifier (SOA) receives frequency-selective feedback from a glass-waveguide circuit. The laser we present here is based on InP for operation in the 1.55 µm wavelength range. The Si3N4/SiO2 glass waveguide circuit comprises two

  2. A hybrid semiconductor-glass waveguide laser

    NARCIS (Netherlands)

    Fan, Youwen; Oldenbeuving, Ruud; Klein, E.J.; Lee, Christopher James; Song, H.; Khan, M.R.H.; Offerhaus, Herman L.; van der Slot, Petrus J.M.; Boller, Klaus J.; Mackenzie, J.I.; Jelinkova, H.; Taira, T.; Ahmed, M.A.

    2014-01-01

    abstract .We report on a novel type of laser in which a semiconductor optical amplifier (SOA) receives frequency-selective feedback from a glass-waveguide circuit. The laser we present here is based on InP for operation in the 1.55 μm wavelength range. The Si3N4/SiO2 glass waveguide circuit

  3. Onset of itinerant ferromagnetism associated with semiconductor ...

    Indian Academy of Sciences (India)

    In this paper, the magnetic and transport properties of the TiNb1−CoSn solid solution compounds with half Heusler cubic MgAgAs-type structure have been studied. This work shows the onset of ferromagnetism associated with a semiconductor to metal transition. The transition occurs directly from ferromagnetic metal to ...

  4. Basic processes and scintillator and semiconductor detectors

    International Nuclear Information System (INIS)

    Bourgeois, C.

    1994-01-01

    In the following course, the interaction of heavy charged particles, electrons and Γ with matter is represented. Two types of detectors are studied, organic and inorganic scintillators and semiconductors. The signal formation is analysed. (author). 13 refs., 48 figs., 5 tabs

  5. Onset of itinerant ferromagnetism associated with semiconductor ...

    Indian Academy of Sciences (India)

    xCoSn solid solution compounds with half Heusler cubic MgAgAs-type structure have been stud- ied. This work shows the onset of ferromagnetism associated with a semiconductor to metal transition. The transition occurs directly from ferromagnetic ...

  6. Unsymmetrical donor–acceptor–donor–acceptor type indoline based organic semiconductors with benzothiadiazole cores for solution-processed bulk heterojunction solar cells

    Directory of Open Access Journals (Sweden)

    Wenqin Li

    2017-10-01

    Full Text Available Bulk heterojunction (BHJ solar cells based on small molecules have attracted potential attention due to their promise of conveniently defined structures, high absorption coefficients, solution process-ability and easy fabrication. Three D–A–D–A type organic semiconductors (WS-31, WS-32 and WS-52 are synthesized, based on the indoline donor and benzotriazole auxiliary acceptor core, along with either bare thiophene or rigid cyclopentadithiophene as π bridge, rhodanine or carbonocyanidate as end-group. Their HOMO orbitals are delocalized throughout the whole molecules. Whereas the LUMOs are mainly localized on the acceptor part of structure, which reach up to benzothiadiazole, but no distribution on indoline donor. The first excitations for WS-31 and WS-32 are mainly originated by electron transition from HOMO to LUMO level, while for WS-52, partly related to transition between HOMO and LUMO+1 level. The small organic molecules are applied as donor components in bulk heterojunction (BHJ organic solar cells, using PC61BM as acceptor material to check their photovoltaic performances. The BHJ solar cells based on blended layer of WS-31:PC61BM and WS-32:PC61BM processed with chloroform show overall photoelectric conversion efficiency (PCE of 0.56% and 1.02%, respectively. WS-32 based BHJ solar cells show a higher current density originated by its relatively larger driving force of photo-induced carrier in photo-active layer to LUMO of PC61BM. Keywords: Indoline donor, Unsymmetrical organic semiconductors, BHJ solar cells, Photovoltaic performances

  7. Two dimensional tunable photonic crystals and n doped semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Elsayed, Hussein A. [Dept. of Physics, Faculty of Sciences, Beni-Suef University (Egypt); El-Naggar, Sahar A. [Dept. of Engineering Math. and Physics, Faculty of Engineering, Cairo University, Giza (Egypt); Aly, Arafa H., E-mail: arafa16@yahoo.com [Dept. of Physics, Faculty of Sciences, Beni-Suef University (Egypt)

    2015-06-15

    In this paper, we theoretically investigate the effect of the doping concentration on the properties of two dimensional semiconductor photonic band structures. We consider two structures; type I(II) that is composed of n doped semiconductor (air) rods arranged into a square lattice of air (n doped semiconductor). We consider three different shapes of rods. Our numerical method is based on the frequency dependent plane wave expansion method. The numerical results show that the photonic band gaps in type II are more sensitive to the changes in the doping concentration than those of type I. In addition, the width of the gap of type II is less sensitive to the shape of the rods than that of type I. Moreover, the cutoff frequency can be strongly tuned by the doping concentrations. Our structures could be of technical use in optical electronics for semiconductor applications.

  8. The interaction between hot and cold gas in early-type galaxies

    Science.gov (United States)

    Bregman, Joel N.; Hogg, David E.; Roberts, Morton S.

    1995-01-01

    SO and Sa galaxies have approximately equal masses of H I and X-ray emitting gas and are ideal sites for studying the interaction between hot and cold gas. An X-ray observation of the Sa galaxy NGC 1291 with the ROSAT position sensitive proportional counter (PSPC) shows a striking spatial anticorrelation between hot and cold gas where X-ray emitting material fills the large central black hole in the H I disk. This supports a previous suggestion that hot gas is a bulge phenomenon and neutral hydrogen is a disk phenomenon. The X-ray luminosity (1.5 x 10(exp 40) ergs/s) and radial surface brightness distribution (beta = 0.51) is the same as for elliptical galaxies with optical luminosities and velocity dispersions like that of the bulge of NGC 1291. Modeling of the X-ray spectrum requires a component with a temperature of 0.15 keV, similar to that expected from the velocity dispersion of the stars, and with a hotter component where kT = 1.07 keV. This hotter component is not due to emission from stars and its origin remains unclear. PSPC observations are reported for the SO NGC 4203, where a nuclear point source dominates the emission, preventing a study of the radial distribution of the hot gas relative to the H I.

  9. Semiconductor saturable absorbers for ultrafast terahertz signals

    DEFF Research Database (Denmark)

    Hoffmann, Matthias C.; Turchinovich, Dmitry

    2010-01-01

    We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP, and Ge in the terahertz THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of semiconductors at high electron momentum...... states, due to conduction band onparabolicity and scattering into satellite valleys in strong THz fields. Saturable absorber parameters, such as linear and nonsaturable transmission, and saturation fluence, are extracted by fits to a classic saturable absorber model. Further, we observe THz pulse...

  10. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  11. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  12. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  13. Fabrication and application of amorphous semiconductor devices

    International Nuclear Information System (INIS)

    Kumurdjian, Pierre.

    1976-01-01

    This invention concerns the design and manufacture of elecric switching or memorisation components with amorphous semiconductors. As is known some compounds, particularly the chalcogenides, have a resistivity of the semiconductor type in the amorphous solid state. These materials are obtained by the high temperature homogeneisation of several single elements such as tellurium, arsenic, germanium and sulphur, followed by water or air quenching. In particular these compounds have useful switching and memorisation properties. In particular they have the characteristic of not suffering deterioration when placed in an environment subjected to nuclear radiations. In order to know more about the nature and properties of these amorphous semiconductors the French patent No. 71 28048 of 30 June 1971 may be consulted with advantage [fr

  14. Charged Semiconductor Defects Structure, Thermodynamics and Diffusion

    CERN Document Server

    Seebauer, Edmund G

    2009-01-01

    The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, P...

  15. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  16. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  17. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  18. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  19. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  20. Optical processes in semiconductors

    CERN Document Server

    Pankove, Jacques I

    1975-01-01

    Based on a series of lectures at Berkeley, 1968-1969, this is the first book to deal comprehensively with all of the phenomena involving light in semiconductors. The author has combined, for the graduate student and researcher, a great variety of source material, journal research, and many years of experimental research, adding new insights published for the first time in this book.Coverage includes energy states in semiconductors and their perturbation by external parameters, absorption, relationships between optical constants, spectroscopy, radiative transitions, nonradiative recombination

  1. Overview of experimental measurements in a generic can-type gas turbine combustor

    CSIR Research Space (South Africa)

    Meyers, BC

    2009-11-01

    Full Text Available Due to CFD Shortfalls, experimental data on gas turbine combustors is required to obtain insight into the combustion and flow mechanisms as well as for simulation and model validation and evaluation. The temperature and velocity fields of a generic...

  2. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  3. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  4. Conduction type of nonstoichiometric alloy semiconductor Cu{sub x}Zn{sub y}S deposited by the photochemical deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Ichimura, Masaya, E-mail: ichimura.masaya@nitech.ac.jp; Maeda, Yosuke

    2015-11-02

    Cu{sub x}Zn{sub y}S films with low Cu content were deposited by photochemical deposition, and the relation between conduction type and Cu content was investigated. The deposition solution for Cu{sub x}Zn{sub y}S was similar to that for ZnS (1 mM ZnSO{sub 4}, 600 mM Na{sub 2}S{sub 2}O{sub 3}, and 3 mM Na{sub 2}SO{sub 3}), with the addition of CuSO{sub 4}. The substrate was held 2–3 mm below the solution surface and irradiated with an Hg-arc lamp. The films were transparent in the visible range and had a band gap of about 3.6–3.8 eV. The composition was evaluated by Auger electron spectroscopy (AES), and the conduction type was determined by photoelectrochemical (PEC) measurements. Clear p-type signals were observed in the PEC measurements for CuSO{sub 4} concentrations higher than 0.3 mM, whereas n-type conduction was observed for CuSO{sub 4} concentrations lower than 0.05 mM. The critical Cu content in the film at the transition of the conduction type was below the detection limit of AES and thus was estimated by extrapolating the results for higher CuSO{sub 4} concentrations. We estimated that the conduction type changed around a Cu content of 0.5%–1% in this alloy system. - Highlights: • Cu{sub x}Zn{sub y}S films with low Cu content are deposited by photochemical deposition. • The films are transparent in the visible range and have a band gap of about 3.6 eV. • The deposition solution contains ZnSO{sub 4}, Na{sub 2}S{sub 2}O{sub 3}, Na{sub 2}SO{sub 3}, and CuSO{sub 4}. • The conduction type is p-type (n-type) for CuSO{sub 4} concentration > 0.3 mM (< 0.05 mM). • The conduction type seems to change around Cu content of 0.5–1% in the films.

  5. Exciton Hybridisation in Organic-Inorganic Semiconductor Microcavities

    National Research Council Canada - National Science Library

    Lidzey, David

    2002-01-01

    ... that could be either a laser or a very efficient LED. The report describes fabrication of new types of microcavity containing organic semiconductors, including strongly-coupled microcavities based on two metallic mirrors...

  6. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  7. Intense terahertz excitation of semiconductors

    CERN Document Server

    Ganichev, S D

    2006-01-01

    This work presents the first comprehensive treatment of high-power terahertz applications to semiconductors and low-dimensional semiconductor structures. Terahertz properties of semiconductors are in the centre of scientific activities because of the need of high-speed electronics.

  8. Semiconductor radiation detectors device physics

    CERN Document Server

    Lutz, Gerhard

    1999-01-01

    Describes the field of modern semiconductor detectors used for energy and position measurement radiation. This book includes an introduction to semiconductor physics. It explains the principles of semiconductor radiation detectors, followed by formal quantitative analysis. It also covers electronic signal readout.

  9. Semiconductors for plasmonics and metamaterials

    DEFF Research Database (Denmark)

    Naik, G.V.; Boltasseva, Alexandra

    2010-01-01

    with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...

  10. A Thieno[2,3-b]pyridine-Flanked Diketopyrrolopyrrole Polymer as an n-Type Polymer Semiconductor for All-Polymer Solar Cells and Organic Field-Effect Transistors

    KAUST Repository

    Chen, Hung-Yang

    2017-12-28

    A novel fused heterocycle-flanked diketopyrrolopyrrole (DPP) monomer, thieno[2,3-b]pyridine diketopyrrolopyrrole (TPDPP), was designed and synthesized. When copolymerized with 3,4-difluorothiophene using Stille coupling polymerization, the new polymer pTPDPP-TF possesses a highly planar conjugated polymer backbone due to the fused thieno[2,3-b]pyridine flanking unit that effectively alleviates the steric hindrance with both the central DPP core and the 3,4-difluorothiophene repeat unit. This new polymer exhibits a high electron affinity (EA) of −4.1 eV and was successfully utilized as an n-type polymer semiconductor for applications in organic field-effect transistors (OFETs) and all polymer solar cells. A promising n-type charge carrier mobility of 0.1 cm2 V–1 s–1 was obtained in bottom-contact, top-gate OFETs, and a power conversion efficiency (PCE) of 2.72% with a high open-circuit voltage (VOC) of 1.04 V was achieved for all polymer solar cells using PTB7-Th as the polymer donor.

  11. Design of Highly Selective Gas Sensors via Physicochemical Modification of Oxide Nanowires: Overview

    Directory of Open Access Journals (Sweden)

    Hyung-Sik Woo

    2016-09-01

    Full Text Available Strategies for the enhancement of gas sensing properties, and specifically the improvement of gas selectivity of metal oxide semiconductor nanowire (NW networks grown by chemical vapor deposition and thermal evaporation, are reviewed. Highly crystalline NWs grown by vapor-phase routes have various advantages, and thus have been applied in the field of gas sensors over the years. In particular, n-type NWs such as SnO2, ZnO, and In2O3 are widely studied because of their simple synthetic preparation and high gas response. However, due to their usually high responses to C2H5OH and NO2, the selective detection of other harmful and toxic gases using oxide NWs remains a challenging issue. Various strategies—such as doping/loading of noble metals, decorating/doping of catalytic metal oxides, and the formation of core–shell structures—have been explored to enhance gas selectivity and sensitivity, and are discussed herein. Additional methods such as the transformation of n-type into p-type NWs and the formation of catalyst-doped hierarchical structures by branch growth have also proven to be promising for the enhancement of gas selectivity. Accordingly, the physicochemical modification of oxide NWs via various methods provides new strategies to achieve the selective detection of a specific gas, and after further investigations, this approach could pave a new way in the field of NW-based semiconductor-type gas sensors.

  12. Design of Highly Selective Gas Sensors via Physicochemical Modification of Oxide Nanowires: Overview.

    Science.gov (United States)

    Woo, Hyung-Sik; Na, Chan Woong; Lee, Jong-Heun

    2016-09-20

    Strategies for the enhancement of gas sensing properties, and specifically the improvement of gas selectivity of metal oxide semiconductor nanowire (NW) networks grown by chemical vapor deposition and thermal evaporation, are reviewed. Highly crystalline NWs grown by vapor-phase routes have various advantages, and thus have been applied in the field of gas sensors over the years. In particular, n -type NWs such as SnO₂, ZnO, and In₂O₃ are widely studied because of their simple synthetic preparation and high gas response. However, due to their usually high responses to C₂H₅OH and NO₂, the selective detection of other harmful and toxic gases using oxide NWs remains a challenging issue. Various strategies-such as doping/loading of noble metals, decorating/doping of catalytic metal oxides, and the formation of core-shell structures-have been explored to enhance gas selectivity and sensitivity, and are discussed herein. Additional methods such as the transformation of n -type into p -type NWs and the formation of catalyst-doped hierarchical structures by branch growth have also proven to be promising for the enhancement of gas selectivity. Accordingly, the physicochemical modification of oxide NWs via various methods provides new strategies to achieve the selective detection of a specific gas, and after further investigations, this approach could pave a new way in the field of NW-based semiconductor-type gas sensors.

  13. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  14. Biexcitons in semiconductor microcavities

    DEFF Research Database (Denmark)

    Borri, P.; Langbein, W.; Woggon, U.

    2003-01-01

    In this paper, the present status of the experimental study of the optical properties of biexcitons in semiconductor microcavities is reviewed. In particular, a detailed investigation of a polariton-biexciton transition in a high-quality single quantum well GaAs/AlGaAs microcavity is reported...

  15. Self-compensation in semiconductors

    Science.gov (United States)

    Tsur, Y.; Riess, I.

    1999-09-01

    The problem of self-compensation of charged dopants is analyzed. Special emphasis is given to dopants in binary oxides. It is shown that one can determine the degree of self-compensation from the properties of the host material and dopant concentration alone. It is further shown that for a native p-type semiconductor, donors are compensated, mostly, by native ionic defects. On the other hand, doping with acceptors allows us to increase significantly the hole concentration, i.e., self-compensation is low under high doping levels. For a native n-type semiconductor the opposite is true, namely, extrinsic acceptors are mainly compensated by native ionic defects. It is shown that the changes in concentration of all the charged defects are simply related by a single factor, the doping factor f, or its power fk where k depends solely on the defect's charge. Quantitative calculations of f and defect concentrations are presented for Cu2O, which was used as a model material. It is found that for p-type Cu2O doping with donors results in f within the range of 1-10, depending on the dopant concentration and P(O2). This means that the hole concentration decreases and the electron concentration increases at most by a factor of 10. Therefore one does not expect to obtain a changeover from p- to n-type cuprous oxide by doping, under equilibrium conditions. Most of the donors are compensated by negative ionic defects. Self-compensation in the presence of amphoteric defects and Fermi level stabilization are discussed, using the former formalism.

  16. Optoelectronic properties of semiconductor nanostructures

    Science.gov (United States)

    Maher, Kristin Nicole

    Semiconductor nanostructures have unique optical and electronic properties that have inspired research into their technological applications and basic science. This thesis presents approaches to the fabrication and characterization of optoelectronic devices incorporating individual semiconductor nanostructures. Nanowires of the II-VI semiconductors CdSe and CdS were synthesized using nanoparticle-catalysed solution-liquid-solid growth. Single-component nanowires and heterostructure nanowires with axial compositional modulation were generated using this method. Individual nanowires and nanocrystals were then incorporated into devices with a three-terminal field-effect transistor geometry. An experimental platform was developed which allows for simultaneous electrical characterization of devices and measurement of their optical properties. This setup enables the measurement of spatially and spectrally resolved electroluminescence (EL) and photoluminescence (PL) from individual nanostructures and nanostructure devices. It also allows the measurement of photon coincidence histograms for emitted light and the acquisition of photocurrent images via laser scanning microscopy. Electroluminescence was observed from individual CdSe nanocrystals contacted by gold electrodes. Concomitant transport measurements at low temperature showed clear evidence of Coulomb blockade at low bias voltage, with light only emitted from devices exhibiting asymmetric tunnel couplings between the nanocrystal and electrodes. Combined analyses of the data indicate that the resistances of the tunnel barriers are bias voltage dependent and that light emission results from the inelastic scattering of tunneling electrons. Three-terminal devices incorporating individual CdSe nanoNvires exhibited EL localized near the positively-biased electrode. Characterization of these devices by scanning photocurrent microscopy (SPCM) and Kelvin probe microscopy (KPM) indicates that while there are n-type Schottky

  17. A rare type of burn injury due to butane gas inhalation.

    Science.gov (United States)

    Seven, Ergin; Horoz, Uğur; Sarı, Elif; Özakpınar, Hülda Rifat; Sandıkcı, Mert Muhittin; İnözü, Emre; Tellioğlu, Ali Teoman

    2017-05-01

    Abusive inhalation of butane gas is becoming a serious public health problem among teenagers and young adult population; however, there has been little reporting on explosion burns associated with abuse of butane cigarette lighter fluid. Retrospective study was conducted of 22 patients who were burned in last 2 years in explosion of butane gas, a flammable, odorless, and colorless aliphatic hydrocarbon. Details of sociodemographic profile of the patients, any underlying psychiatric illness, alcohol abuse, depth of burn injury, any associated injury, duration of hospitalization, and percentage of burned area were recorded and analyzed. All of the patients were young men, and most had superficial burn injury. Hospital stay ranged from 0 to 11 days. All of the patients were treated with conservative management.

  18. Demand-type gas supply system for rocket borne thin-window proportional counters

    Science.gov (United States)

    Acton, L. W.; Caravalho, R.; Catura, R. C.; Joki, E. G.

    1977-01-01

    A simple closed loop control system has been developed to maintain the gas pressure in thin-window proportional counters during rocket flights. This system permits convenient external control of detector pressure and system flushing rate. The control system is activated at launch with the sealing of a reference volume at the existing system pressure. Inflight control to plus or minus 2 torr at a working pressure of 760 torr has been achieved on six rocket flights.

  19. Preparation of gas diffusion electrodes for high temperature PEM-type fuel cells

    Czech Academy of Sciences Publication Activity Database

    Mazur, P.; Mališ, J.; Paidar, M.; Schauer, Jan; Bouzek, K.

    2010-01-01

    Roč. 14, 1-3 (2010), s. 101-105 ISSN 1944-3994. [PERMEA 2009. Prague, 07.06.2009-11.06.2009] R&D Projects: GA ČR GA203/08/0465 Institutional research plan: CEZ:AV0Z40500505 Keywords : gas diffusion electrode * polymer electrolyte * ionic liquid Subject RIV: CD - Macromolecular Chemistry Impact factor: 0.752, year: 2010

  20. Semirelativity in semiconductors: a review.

    Science.gov (United States)

    Zawadzki, Wlodek

    2017-09-20

    An analogy between behavior of electrons in narrow-gap semiconductors (NGS) and relativistic electrons in vacuum is reviewed. Energy band structures [Formula: see text] are considered for various NGS materials and their correspondence to the energy-momentum relation in special relativity is emphasized. It is indicated that special relativity for vacuum is analogous to a two-band [Formula: see text] description for NGS. The maximum electron velocity in NGS is [Formula: see text], which corresponds to the light velocity in vacuum. An effective mass of charge carriers in semiconductors is introduced, relating their velocity to quasimomentum and it is shown that this mass depends on electron energy (or velocity) in a way similar to the mass of free relativistic electrons. In [Formula: see text] alloys one can reach vanishing energy gap at which electrons and light holes become three-dimensional massless Dirac fermions. A wavelength [Formula: see text] is defined for NGS, in analogy to the Compton wavelength in relativistic quantum mechanics. It is estimated that [Formula: see text] is on the order of tens of Angstroms in typical semiconducting materials which is experimentally confirmed in tunneling experiments on energy dispersion in the forbidden gap. Statistical properties of the electron gas in NGS are calculated and their similarity is demonstrated to those of the Juttner gas of relativistic particles. Interband electron tunneling in NGS is described and shown to be in close analogy to the predicted but unobserved tunneling between negative and positive energies resulting from the Dirac equation for free electrons. It is demonstrated that the relativistic analogy holds for orbital and spin properties of electrons in the presence of an external magnetic field. In particular, it is shown that the spin magnetic moment of both NGS electrons and relativistic electrons approaches zero with increasing energy. This conclusion is confirmed experimentally for NGS. Electrons

  1. Semirelativity in semiconductors: a review

    Science.gov (United States)

    Zawadzki, Wlodek

    2017-09-01

    An analogy between behavior of electrons in narrow-gap semiconductors (NGS) and relativistic electrons in vacuum is reviewed. Energy band structures \\varepsilon ≤ft(\\mathbf{k}\\right) are considered for various NGS materials and their correspondence to the energy-momentum relation in special relativity is emphasized. It is indicated that special relativity for vacuum is analogous to a two-band \\mathbf{k}\\centerdot \\mathbf{p} description for NGS. The maximum electron velocity in NGS is u≃ 1× {{10}8}~\\text{cm}~{{\\text{s}}-1} , which corresponds to the light velocity in vacuum. An effective mass of charge carriers in semiconductors is introduced, relating their velocity to quasimomentum and it is shown that this mass depends on electron energy (or velocity) in a way similar to the mass of free relativistic electrons. In \\text{H}{{\\text{g}}1-x}\\text{C}{{\\text{d}}x}\\text{Te} alloys one can reach vanishing energy gap at which electrons and light holes become three-dimensional massless Dirac fermions. A wavelength {λz} is defined for NGS, in analogy to the Compton wavelength in relativistic quantum mechanics. It is estimated that {λz} is on the order of tens of Angstroms in typical semiconducting materials which is experimentally confirmed in tunneling experiments on energy dispersion in the forbidden gap. Statistical properties of the electron gas in NGS are calculated and their similarity is demonstrated to those of the Juttner gas of relativistic particles. Interband electron tunneling in NGS is described and shown to be in close analogy to the predicted but unobserved tunneling between negative and positive energies resulting from the Dirac equation for free electrons. It is demonstrated that the relativistic analogy holds for orbital and spin properties of electrons in the presence of an external magnetic field. In particular, it is shown that the spin magnetic moment of both NGS electrons and relativistic electrons approaches zero with increasing

  2. Semiconductor X-ray detectors

    CERN Document Server

    Lowe, Barrie Glyn

    2014-01-01

    Identifying and measuring the elemental x-rays released when materials are examined with particles (electrons, protons, alpha particles, etc.) or photons (x-rays and gamma rays) is still considered to be the primary analytical technique for routine and non-destructive materials analysis. The Lithium Drifted Silicon (Si(Li)) X-Ray Detector, with its good resolution and peak to background, pioneered this type of analysis on electron microscopes, x-ray fluorescence instruments, and radioactive source- and accelerator-based excitation systems. Although rapid progress in Silicon Drift Detectors (SDDs), Charge Coupled Devices (CCDs), and Compound Semiconductor Detectors, including renewed interest in alternative materials such as CdZnTe and diamond, has made the Si(Li) X-Ray Detector nearly obsolete, the device serves as a useful benchmark and still is used in special instances where its large, sensitive depth is essential. Semiconductor X-Ray Detectors focuses on the history and development of Si(Li) X-Ray Detect...

  3. FORMATION OF LATE-TYPE SPIRAL GALAXIES: GAS RETURN FROM STELLAR POPULATIONS REGULATES DISK DESTRUCTION AND BULGE GROWTH

    International Nuclear Information System (INIS)

    Martig, Marie; Bournaud, Frederic

    2010-01-01

    Spiral galaxies have most of their stellar mass in a large rotating disk, and only a modest fraction in a central spheroidal bulge. This challenges present models of galaxy formation: galaxies form at the center of dark matter halos through a combination of hierarchical merging and gas accretion along cold streams. Cosmological simulations thus predict that galaxies rapidly grow their bulge through mergers and instabilities and end up with most of their mass in the bulge and an angular momentum much below the observed level, except in dwarf galaxies. We propose that the continuous return of gas by stellar populations over cosmic times could help to solve this issue. A population of stars formed at a given instant typically returns half of its initial mass in the form of gas over 10 billion years, and the process is not dominated by supernovae explosions but by the long-term mass-loss from low- and intermediate-mass stars. Using simulations of galaxy formation, we show that this gas recycling can strongly affect the structural evolution of massive galaxies, potentially solving the bulge fraction issue, as the bulge-to-disk ratio of a massive galaxy can be divided by a factor of 3. The continuous recycling of baryons through star formation and stellar mass loss helps the growth of disks and their survival to interactions and mergers. Instead of forming only early-type, spheroid-dominated galaxies (S0 and ellipticals), the standard cosmological model can successfully account for massive late-type, disk-dominated spiral galaxies (Sb-Sc).

  4. Visual Investigation of the Occurrence Characteristics of Multi-Type Formation Water in a Fracture–Cavity Carbonate Gas Reservoir

    Directory of Open Access Journals (Sweden)

    Lu Wang

    2018-03-01

    Full Text Available It is difficult to investigate the formation process and occurrence states of water in multi-type reservoirs, due to the strong heterogeneity and complex microstructure of the fracture–cavity carbonate gas reservoirs. To date, there is no systematic study on the occurrence characteristics of multi-type formation water, especially through visual observation experiments. In this paper, a new creation method for visual micromodels based on CT scan images and microelectronic photolithography techniques was described. Subsequently, a gas–drive–water visual experiment was conducted to intuitively study the formation mechanism and the occurrence states of formation water. Then, the ImageJ gray analysis method was utilized to quantitatively investigate the gas-water saturation and the proportion of residual water film. Finally, the occurrence characteristics of formation water and its effects on gas seepage flow were comprehensively analyzed. Visual experimental results showed that: the migration processes of natural gas in different types of reservoirs are different; the water in multiple media consists of native movable water and residual water, and residual water is composed of secondary movable water and irreducible water; the residual water mainly occurs in different locations of different reservoirs with the forms of “water film”, “water mass”, “water column” and “water droplets”; the main influencing factors are capillary force, surface tension, displacement pressure and channel connectivity. Quantitative results reflect that the saturation of movable water and residual water are the parameters related directly to reservoir physical properties, pore structure and displacement pressure—the smaller the size of flow channel, the larger the space occupied by water film; the thickness proportion of water film is increasing exponentially with the channel size; the thickness proportion of water film decreases as the increase of

  5. A Microstructural Investigation of Gas Atomized Raney Type Al-27.5 at.%Ni Catalyst Precursor Alloys

    OpenAIRE

    Mullis, AM; Bigg, TD; Adkins, NJ

    2015-01-01

    Quantitative image analysis has been used to investigate the phase composition of gas atomized powders of a Raney type Ni catalyst precursor alloys of composition Al-27.5 at.% Ni in the powder size range 150-212 μm. We find that there are considerable variations in phase composition both between powders from the same batch and as a function distance from the particle surface within individual particles. Such variations may have significant implications for the future production and uptake of ...

  6. Tris(2-(1 H -pyrazol-1-yl)pyridine)cobalt(III) as p-Type Dopant for Organic Semiconductors and Its Application in Highly Efficient Solid-State Dye-Sensitized Solar Cells

    KAUST Repository

    Burschka, Julian

    2011-11-16

    Chemical doping is an important strategy to alter the charge-transport properties of both molecular and polymeric organic semiconductors that find widespread application in organic electronic devices. We report on the use of a new class of Co(III) complexes as p-type dopants for triarylamine-based hole conductors such as spiro-MeOTAD and their application in solid-state dye-sensitized solar cells (ssDSCs). We show that the proposed compounds fulfill the requirements for this application and that the discussed strategy is promising for tuning the conductivity of spiro-MeOTAD in ssDSCs, without having to rely on the commonly employed photo-doping. By using a recently developed high molar extinction coefficient organic D-π-A sensitizer and p-doped spiro-MeOTAD as hole conductor, we achieved a record power conversion efficiency of 7.2%, measured under standard solar conditions (AM1.5G, 100 mW cm -2). We expect these promising new dopants to find widespread applications in organic electronics in general and photovoltaics in particular. © 2011 American Chemical Society.

  7. Illumination of Double Snapback Mechanism in High Voltage Operating Grounded Gate Extended Drain N-type Metal-Oxide-Semiconductor Field Effects Transistor Electro-Static Discharge Protection Devices

    Science.gov (United States)

    Kim, Kil Ho; Jung, Yong Icc; Shim, Jin Seop; So, Hyung Tae; Lee, Ji Hyun; Hwang, Lee Yeun; Park, Jin Won

    2004-10-01

    High current behaviors of the ‘grounded gate extended drain N-type metal-oxide-semiconductor field effects transistor’ (GG_EDNMOS) electro-static discharge (ESD) protection devices are analyzed. Both the transmission line pulse (TLP) data and the thermal incorporated 2-dimensional simulation analyses demonstrate a characteristic double snapback phenomenon after triggering of biploar junction transistor (BJT) operation. This implies the co-existence of two different on-states in high current region. The 2nd on-state, characterized by extremely low snapback holding voltage and low on-resistance, seems to be responsible for the vulnerability of the device under ESD stress. Simulation based contour analyses reveal that combination of BJT operation and deep electron channeling induced by high electron injection gives rise to the 2nd on-state. Thus, the deep electron channel formation needs to be prevented in order to realize stable and robust ESD protection performance. Further studies reveal that the N-drift implant dose, among various process parameters, is a critical factor to determine the formation of deep electron channeling and consequential occurrence of the 2nd on-state. Based on our analyses, general methodology to avoid the double snapback and to realize stable ESD protection is to be discussed.

  8. Conversion of electric bell type furnace for natural gas usage: a case study

    Energy Technology Data Exchange (ETDEWEB)

    Ferraz, Andre D.; Machado Junior, Antonio R.; Rocha, Ivan C.C. da; Azevedo, Jorge G.W. de; Konishi, Ricardo; Lehmkuhl, Willian A. [Companhia de Gas de Santa Catarina (SCGAS), Florianopolis, SC (Brazil); Nunes, Andrea T.; Possamai, Talita S.; Nicolau, Vicente de P. [Universidade Federal de Santa Catarina (UFSC), Florianopolis, SC (Brazil)

    2012-07-01

    In the present process of the heat treatment of normalizing of the crystalline structure of cast metal pieces, the heating is made by electric resistance arranged on the inner surfaces of the side walls of a bell furnace. Although electrical heating is suitable to obtain a uniform generation on the walls covered with electrical resistances, and is easy to control and operate with virtually no gas flow, it has some disadvantages such as poor movement of the heated ambient air, and higher cost. Heating occurs mostly by thermal radiation, with direct exchange between the resistors and the heated parts, but with a part serving as a barrier to the other, and with greater difficulty of heating the core loading. The details presented in this study, will simulate the process of heating by using electricity and using natural gas. In these simulations will be observed the distribution of temperature in the load and indoor over time and the rate of energy transferred to the load and also for the outside so to have a comparative processes. (author)

  9. Ge1−xSix on Ge-based n-type metal–oxide semiconductor field-effect transistors by device simulation combined with high-order stress–piezoresistive relationships

    International Nuclear Information System (INIS)

    Lee, Chang-Chun; Hsieh, Chia-Ping; Huang, Pei-Chen; Cheng, Sen-Wen; Liao, Ming-Han

    2016-01-01

    The considerably high carrier mobility of Ge makes Ge-based channels a promising candidate for enhancing the performance of next-generation devices. The n-type metal–oxide semiconductor field-effect transistor (nMOSFET) is fabricated by introducing the epitaxial growth of high-quality Ge-rich Ge 1−x Si x alloys in source/drain (S/D) regions. However, the short channel effect is rarely considered in the performance analysis of Ge-based devices. In this study, the gate-width dependence of a 20 nm Ge-based nMOSFET on electron mobility is investigated. This investigation uses simulated fabrication procedures combined with the relationship of the interaction between stress components and piezoresistive coefficients at high-order terms. Ge 1−x Si x alloys, namely, Ge 0.96 Si 0.04 , Ge 0.93 Si 0.07 , and Ge 0.86 Si 0.14 , are individually tested and embedded into the S/D region of the proposed device layout and are used in the model of stress estimation. Moreover, a 1.0 GPa tensile contact etching stop layer (CESL) is induced to explore the effect of bi-axial stress on device geometry and subsequent mobility variation. Gate widths ranging from 30 nm to 4 μm are examined. Results show a significant change in stress when the width is < 300 nm. This phenomenon becomes notable when the Si in the Ge 1−x Si x alloy is increased. The stress contours of the Ge channel confirm the high stress components induced by the Ge 0.86 Si 0.14 stressor within the device channel. Furthermore, the stresses (S yy ) of the channel in the transverse direction become tensile when CESL is introduced. Furthermore, when pure S/D Ge 1−x Si x alloys are used, a maximum mobility gain of 28.6% occurs with an ~ 70 nm gate width. A 58.4% increase in mobility gain is obtained when a 1.0 GPa CESL is loaded. However, results indicate that gate width is extended to 200 nm at this point. - Highlights: • A 20 nm Ge-based n-channel metal–oxide semiconductor field-effect transistor is investigated

  10. Active Galactic Nuclei Feedback and the Origin and Fate of the Hot Gas in Early-type Galaxies

    Science.gov (United States)

    Pellegrini, Silvia; Ciotti, Luca; Negri, Andrea; Ostriker, Jeremiah P.

    2018-04-01

    A recent determination of the relationships between the X-ray luminosity of the ISM (L X) and the stellar and total mass for a sample of nearby early-type galaxies (ETGs) is used to investigate the origin of the hot gas, via a comparison with the results of hydrodynamical simulations of the ISM evolution for a large set of isolated ETGs. After the epoch of major galaxy formation (after z ≃ 2), the ISM is replenished by stellar mass losses and SN ejecta, at the rate predicted by stellar evolution, and is depleted by star formation; it is heated by the thermalization of stellar motions, SNe explosions, and the mechanical (from winds) and radiative AGN feedback. The models agree well with the observed relations, even for the largely different L X values at the same mass, thanks to the sensitivity of the gas flow to many galaxy properties; this holds for models including AGN feedback, and those without. Therefore, the mass input from the stellar population is able to account for a major part of the observed L X; and AGN feedback, while very important to maintain massive ETGs in a time-averaged quasi-steady state, keeping low star formation and the black hole mass, does not dramatically alter the gas content originating in stellar recycled material. These conclusions are based on theoretical predictions for the stellar population contributions in mass and energy, and on a self-consistent modeling of AGN feedback.

  11. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  12. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  13. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  14. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  15. Quantum Confined Semiconductors

    Science.gov (United States)

    2015-02-01

    RCR    , (5) which considers all elastic scattering events on the energy shell kk EEE   , which is appropriate for all scattering...fluctuations in semiconductor superlattices using a magneto -transport technique,” Superlattices and Microstructures 15, 225-228 (1994). 12. I. Dharssi and...εyy is consistently slightly tensile (≈ -1%), which agreed with theoretical calculations of εyy based on published values of elastic constants. An

  16. Muonium states in semiconductors

    International Nuclear Information System (INIS)

    Patterson, B.D.

    1987-01-01

    There is a brief summary of what is known about the muonium states isotropic, anisotropic and diamagnetic in diamond and zincblende semiconductors. The report deals with muonium spectroscopy, including the formation probabilities, hyperfine parameters and electronic g-factors of the states. The dynamics of the states is treated including a discussion of the transition from isotropic Mu to anisotropic Mu in diamond, temperature-dependent linewidthes in silicon and germanium and effects of daping and radiation damage

  17. Semiconductor projectile impact detector

    Science.gov (United States)

    Shriver, E. L. (Inventor)

    1977-01-01

    A semiconductor projectile impact detector is described for use in determining micrometeorite presence, as well as its flux and energy comprising a photovoltaic cell which generates a voltage according to the light and heat emitted by the micrometeorites upon impact. A counter and peak amplitude measuring device were used to indicate the number of particules which strike the surface of the cell as well as the kinetic energy of each of the particles.

  18. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  19. Semiconductor detectors. Recent evolution

    International Nuclear Information System (INIS)

    Siffert, P.

    1977-01-01

    The recent evolution as well as the problems appearing in the use of semiconductor counters in both X and γ-ray as well as heavy ions spectroscopy are reviewed. For the photon counters the discussion is limited to cadmium telluride and mercuric iodide room temperature diodes, whereas for heavy ions, identification by means of thin ΔE/Δx counters and some problems related to the pulse amplitude in E detectors are considered [fr

  20. High throughput semiconductor deposition system

    Energy Technology Data Exchange (ETDEWEB)

    Young, David L.; Ptak, Aaron Joseph; Kuech, Thomas F.; Schulte, Kevin; Simon, John D.

    2017-11-21

    A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 .mu.m/minute.

  1. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  2. 3D pore-type digital rock modeling of natural gas hydrate for permafrost and numerical simulation of electrical properties

    Science.gov (United States)

    Dong, Huaimin; Sun, Jianmeng; Lin, Zhenzhou; Fang, Hui; Li, Yafen; Cui, Likai; Yan, Weichao

    2018-02-01

    Natural gas hydrate is being considered as an alternative energy source for sustainable development and has become a focus of research throughout the world. In this paper, based on CT scanning images of hydrate reservoir rocks, combined with the microscopic distribution of hydrate, a diffusion limited aggregation (DLA) model was used to construct 3D hydrate digital rocks of different distribution types, and the finite-element method was used to simulate their electrical characteristics in order to study the influence of different hydrate distribution types, hydrate saturation and formation of water salinity on electrical properties. The results show that the hydrate digital rocks constructed using the DLA model can be used to characterize the microscopic distribution of different types of hydrates. Under the same conditions, the resistivity of the adhesive hydrate digital rock is higher than the cemented and scattered type digital rocks, and the resistivity of the scattered hydrate digital rock is the smallest among the three types. Besides, the difference in the resistivity of the different types of hydrate digital rocks increases with an increase in hydrate saturation, especially when the saturation is larger than 55%, and the rate of increase of each of the hydrate types is quite different. Similarly, the resistivity of the three hydrate types decreases with an increase in the formation of water salinity. The single distribution hydrate digital rock constructed, combined with the law of microscopic distribution and influence of saturation on the electrical properties, can effectively improve the accuracy of logging identification of hydrate reservoirs and is of great significance for the estimation of hydrate reserves.

  3. The differentiation of fibre- and drug type Cannabis seedlings by gas chromatography/mass spectrometry and chemometric tools.

    Science.gov (United States)

    Broséus, Julian; Anglada, Frédéric; Esseiva, Pierre

    2010-07-15

    Cannabis cultivation in order to produce drugs is forbidden in Switzerland. Thus, law enforcement authorities regularly ask forensic laboratories to determinate cannabis plant's chemotype from seized material in order to ascertain that the plantation is legal or not. As required by the EU official analysis protocol the THC rate of cannabis is measured from the flowers at maturity. When laboratories are confronted to seedlings, they have to lead the plant to maturity, meaning a time consuming and costly procedure. This study investigated the discrimination of fibre type from drug type Cannabis seedlings by analysing the compounds found in their leaves and using chemometrics tools. 11 legal varieties allowed by the Swiss Federal Office for Agriculture and 13 illegal ones were greenhouse grown and analysed using a gas chromatograph interfaced with a mass spectrometer. Compounds that show high discrimination capabilities in the seedlings have been identified and a support vector machines (SVMs) analysis was used to classify the cannabis samples. The overall set of samples shows a classification rate above 99% with false positive rates less than 2%. This model allows then discrimination between fibre and drug type Cannabis at an early stage of growth. Therefore it is not necessary to wait plants' maturity to quantify their amount of THC in order to determine their chemotype. This procedure could be used for the control of legal (fibre type) and illegal (drug type) Cannabis production. (c) 2010 Elsevier Ireland Ltd. All rights reserved.

  4. Development of a neutronic model for the fuel of a high temperature gas reactor type PBMR

    International Nuclear Information System (INIS)

    Oropeza C, I.; Carmona H, R.; Francois L, J. L.

    2008-01-01

    In this work was developed the neutronic model of a fuel sphere of a nuclear reactor of gas of high temperature to modulate of bed of spheres (PBMR), using the Monte Carlo method with the MCNPx code. In order to be able to verify the fuel model constructed in this investigation, it is used a case of reference, based on an international exercise b enchmark . The benchmark report contains the results sent by different international participants for five phases with respect to the high temperature gas reactor (HTR), fed with uranium, plutonium and thorium. In particular, in first stage of benchmark an infinite adjustment of uranium compound fuel spheres is considered unique, with which our results were compared. This first stage considers two cases: cell calculations with spherical external frontier and cell calculations with cubic external frontier. The objective is to identify any increase in the uncertainty, related to the uranium fuel, that is associated with the plutonium and thorium fuels. In order to validate our results, the values of the neutron multiplication factor were taken in account, in cold and in the heat of the moment from the participants who sent their results obtained with Monte Carlo and deterministic calculations. The model of the fuel sphere developed in this work considers a regular distribution of 15000 Triso particles, in a cubic mesh centered within the sphere. For it was necessary to define the step firstly or p itch o f the cubic mesh. Generally, the results obtained by the participants of benchmark and those of this investigation present good agreement, nevertheless, appear some discrepancies, attributed to factors like different libraries of cross sections used, the nature of the solution: Monte Carlo or deterministic, and the difficulty of some participants to model the external frontier condition of reflection. (Author)

  5. Novel room temperature ferromagnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

    2004-06-01

    distribution of Mn substituting for Zn a 2+ state in the ZnO lattice. Ferromagnetic Resonance (FMR) technique is used to confirm the existence of ferromagnetic ordering at temperatures as high as 425K. The ab initio calculations were found to be consistent with the observation of ferromagnetism arising from fully polarized Mn 2+ state. The key to observed room temperature ferromagnetism in this system is the low temperature processing, which prevents formation of clusters, secondary phases and the host ZnO from becoming n-type. The electronic structure of the same Mn doped ZnO thin films studied using XAS, XES and RIXS, revealed a strong hybridization between Mn 3d and O 2p states, which is an important characteristic of a Dilute magnetic Semiconductor (DMS). It is shown that the various processing conditions like sintering temperature, dopant concentration and the properties of precursors used for making of DMS have a great influence on the final properties. Use of various experimental techniques to verify the physical properties, and to understand the mechanism involved to give rise to ferromagnetism is presented. Methods to improve the magnetic moment in Mn doped ZnO are also described. New promising DMS materials (such as Cu doped ZnO are explored). The demonstrated new capability to fabricate powder, pellets, and thin films of room temperature ferromagnetic semiconductors thus makes possible the realization of a wide range of complex elements for a variety of new multifunctional phenomena related to Spintronic devices as well as magneto-optic components.

  6. Selection of efficient etchants for nondestructive treatment of semiconductors

    International Nuclear Information System (INIS)

    Tomashik, V.N.; Fomin, A.V.; Tomashik, Z.F.

    1996-01-01

    The scheme for studying etching processes of semiconductor materials and developing new etchants for different semiconductors is proposed. The scheme includes the experiment mathematical planning, computerized physicochemical modeling, kinetic studies, investigation of surface layers, formed by etching. Such on approach makes it possible to optimize the etchant composition in every concrete cage. The scheme is tested in the course of developing optimal methodologies of preepitaxial treatment and selection of etchants composition for semiconductor compounds of the A 1 B 6 and A 3 B 5 type. 13 refs., 4 figs

  7. Experimental Methods for Implementing Graphene Contacts to Finite Bandgap Semiconductors

    DEFF Research Database (Denmark)

    Meyer-Holdt, Jakob

    Present Ph.D. thesis describes my work on implanting graphene as electrical contact to finite bandgap semiconductors. Different transistor architectures, types of graphene and finite bandgap semiconductors have been employed. The device planned from the beginning of my Ph.D. fellowship...... contacts to semiconductor nanowires, more specifically, epitaxially grown InAs nanowires. First, we tried a top down method where CVD graphene was deposited on substrate supported InAs nanowires followed by selective graphene ashing to define graphene electrodes. While electrical contact between...

  8. Metal-semiconductor interface in extreme temperature conditions

    International Nuclear Information System (INIS)

    Bulat, L.P.; Erofeeva, I.A.; Vorobiev, Yu.V.; Gonzalez-Hernandez, J.

    2008-01-01

    We present an investigation of electrons' and phonons' temperatures in the volume of a semiconductor (or metal) sample and at the interface between metal and semiconductor. Two types of mismatch between electrons' and phonons' temperatures take place: at metal-semiconductor interfaces and in the volume of the sample. The temperature mismatch leads to nonlinear terms in expressions for heat and electricity transport. The nonlinear effects should be taken into consideration in the study of electrical and heat transport in composites and in electronic chips

  9. Electron-phonon coupling effect on wakefields in piezoelectric semiconductors

    CERN Document Server

    Salimullah, M; Ghosh, S K; Nitta, H; Hayashi, Y

    2003-01-01

    Using an appropriate dielectric constant for an n-type piezoelectric semiconductor plasma and a moving test particle approach, it is shown that, besides the usual screened potential, there exists a non-Coulombian oscillatory potential or a wakefield behind a moving charged particle due to a strong resonant interaction between the charged particle and the electro-acoustic mode of the host semiconductor. With the concept of the wakefield, a possible lattice formation of colloids resulting from ion implantation in a current-carrying piezoelectric semiconductor has been examined.

  10. Integration and electrical properties of epitaxial LiNbO3 ferroelectric film on n-type GaN semiconductor

    International Nuclear Information System (INIS)

    Hao Lanzhong; Zhu Jun; Liu Yunjie; Wang Shuili; Zeng Huizhong; Liao Xiuwei; Liu Yingying; Lei Huawei; Zhang Ying; Zhang Wanli; Li Yanrong

    2012-01-01

    LiNbO 3 (LNO) films were epitaxially grown on n-type GaN templates using pulsed laser deposition technique. The microstructures and electrical properties of the LNO/GaN heterostructure were characterized by x-ray diffraction, transmission electron microscope, and capacitance–voltage (C–V) measurements. The LNO films had two variants of grains rotated 60° in-plane to each other. The epitaxial relationship of the respective variants could be built as [10–10]LNO//[1–210]GaN and [1–100]LNO//[11–20]GaN via 30° in-plane rotation of the LNO film relative to the GaN layer. Interface analysis of the heterostructure demonstrated that two different epitaxial growth mechanisms vertical heteroepitaxy and lateral homoepitaxy, should happen at the interface of LNO/GaN. Counterclockwise C–V windows induced by the ferroelectric polarizations of LNO film could be observed clearly. The size of the window increased with increasing the sweep bias and a large window of 5.8 V was achieved at ± 15 V. By solving Poisson and drift–diffusion equations, the physical mechanisms of the C–V characteristics were demonstrated.

  11. Evaluation of the bond polarizabilities of zincblende-type semiconductors: Application to the Raman spectra of disordered GaSb/AlSb (001) superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Berdekas, D. [Direction of High Schools Education of Larissa, Lykeio of Giannouli, Larissa (Greece); Ves, S. [School of Physics, Aristotle University of Thessaloniki (Greece)

    2012-08-15

    We derive expressions for the bond polarizability (BP) parameters involving only directly measurable quantities, such as dielectric and elasto-optic constants of the bulk crystal and apply them to zincblende-type crystals. The vibrational modes are calculated on the basis of an eleven (11) parameter rigid-ion model approximation (RIM). Having estimated the BP parameters for GaSb and AlSb bulk crystals, we calculate the Raman spectra away of resonance conditions for the vibrations of perfect and disordered (GaSb)1/(AlSb)1 (001) superlattices (SL). The disordered SL is approximated with primitive cells much larger than the primitive cell of the perfect 1 x 1 SL. Furthermore, we show that disorder modifies the Raman spectra of the perfect SL by introducing asymmetry as well as by the formation of additional peaks in both the acoustic and optical range of the Raman spectra. Puzzlingly, even a small degree of disorder, results in a blueshift of all modes frequencies, especially the strongest optical ones. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Electrical Characterization of Semiconductor Materials and Devices

    Science.gov (United States)

    Deen, M.; Pascal, Fabien

    Semiconductor materials and devices continue to occupy a preeminent technological position due to their importance when building integrated electronic systems used in a wide range of applications from computers, cell-phones, personal digital assistants, digital cameras and electronic entertainment systems, to electronic instrumentation for medical diagnositics and environmental monitoring. Key ingredients of this technological dominance have been the rapid advances made in the quality and processing of materials - semiconductors, conductors and dielectrics - which have given metal oxide semiconductor device technology its important characteristics of negligible standby power dissipation, good input-output isolation, surface potential control and reliable operation. However, when assessing material quality and device reliability, it is important to have fast, nondestructive, accurate and easy-to-use electrical characterization techniques available, so that important parameters such as carrier doping density, type and mobility of carriers, interface quality, oxide trap density, semiconductor bulk defect density, contact and other parasitic resistances and oxide electrical integrity can be determined. This chapter describes some of the more widely employed and popular techniques that are used to determine these important parameters. The techniques presented in this chapter range in both complexity and test structure requirements from simple current-voltage measurements to more sophisticated low-frequency noise, charge pumping and deep-level transient spectroscopy techniques.

  13. Three-dimensional particle image velocimetry in a generic can-type gas turbine combustor

    CSIR Research Space (South Africa)

    Meyers, BC

    2009-09-01

    Full Text Available The three-dimensional flow field inside a generic can-type, forward flow, experimental combustor was measured. A stereoscopic Particle Image Velocimetry (PIV) system was used to obtain the flow field of the combustor in the non-reacting condition...

  14. 75 FR 49526 - Freescale Semiconductor, Inc., Technical Information Center, Tempe, AZ; Freescale Semiconductor...

    Science.gov (United States)

    2010-08-13

    ... Semiconductor, Inc., Technical Information Center, Tempe, AZ; Freescale Semiconductor, Inc., Technical... October 1, 2009, applicable to workers of Freescale Semiconductor, Inc., Technical Information Center..., Massachusetts location of Freescale Semiconductor, Inc., Technical Information Center. The intent of the...

  15. Report on achievement in the preceding research related to global industry technologies for the global industry technology research and development project. Research on gas systems substituting global warming gases such as PFC used in manufacturing semiconductors; 1998 nendo chikyu kankyo sangyo gijutsu ni kakawaru sendo kenkyu. Handotai seizo nado ni shiyosuru PFC nado no chikyu ondanka gas no daitai gas system no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    The present semiconductor manufacturing process uses a great amount of PFC having large global warming coefficients and extremely long atmospheric life. A research was made particularly on reduction of its emission from etching processes. After introducing how the semiconductor industry has been working conventionally on protection of the global environment, this paper makes clear the purpose and positioning of this preceding research, as well as how it is moved forward. The paper also reports the results of analyzing and discussing the exhaust gases from etching devices using several kinds of substitute PFC gases. Survey results are reported on the possibilities of new substitute gases, plasma decomposition and treatment of exhaust gases, reaction process simulation, and in-situ analyzing and evaluating technologies. Investigations were made on the possibility of using no PFC in wiring processes which consume greater amount of PFC, as well as on wiring techniques using inter-layer insulation film with low dielectric rate, a new wiring structure forming technology, new functional elements, circuits and systems in a wide range. Proposals were given on specific research and development themes and plans that begin in fiscal 1999. (NEDO)

  16. Some economic aspects of natural uranium graphite gas reactor types. Present status and trends of costs in France

    International Nuclear Information System (INIS)

    Gaussens, J.; Tanguy, P.

    1964-01-01

    The first part of this report defines the economic advantages of natural uranium fuels, which are as follows: the restricted number and relatively simple fabrication processes of the fuel elements, the low cost per kWh of the finished product and the reasonable capital investments involved in this type of fuel cycle as compared to that of enriched uranium. All these factors combine to reduce the arbitrary nature of cost estimates, which is particularly marked in the case of enriched uranium due to the complexity of its cycle and the uncertainties of plutonium prices). Finally, the wide availability of yellowcake, as opposed to the present day virtual monopoly of isotope separation, and the low cost of natural uranium stockpiling, offer appreciable guarantees in the way of security of supply and economic and political independence as compared with the use of enriched uranium. As far as overall capital investments are concerned, it is shown that, although graphite-gas reactor costs are higher than those of light water reactors in certain capacity ranges, the situation becomes far less clear when we start taking into account, in the interest of national independence, the cost of nuclear fuel production equipment in the case of each of these types of reactor. Finally, the marginal cost of the power capacity of a graphite-gas reactor is low and its technological limitations have receded (owing particularly to the use of prestressed concrete). It is a well known fact that the trend is now towards larger power station units, which means that the rentability of natural uranium graphite reactors as compared to other types of reactors will become more and more pronounced. The second section aims at presenting a realistic short and medium term view of the fuel, running, and investment costs of French natural uranium graphite gas, reactors. Finally, the economic goals which this type of reactor can reach in the very near future are given. It is thus shown that considerable

  17. New developments in power semiconductors

    Science.gov (United States)

    Sundberg, G. R.

    1983-06-01

    This paper represents an overview of some recent power semiconductor developments and spotlights new technologies that may have significant impact for aircraft electric secondary power. Primary emphasis will be on NASA-Lewis-supported developments in transistors, diodes, a new family of semiconductors, and solid-state remote power controllers. Several semiconductor companies that are moving into the power arena with devices rated at 400 V and 50 A and above are listed, with a brief look at a few devices.

  18. Breakdown Features of Various Microstrip-Type Gas Counter Designs and Their Improvements

    Science.gov (United States)

    Peskov, V.; Ramsey, B. D.; Fonte, P.

    1998-01-01

    Breakdown mechanisms and spurious pulses, the precursors to some breakdowns, were studied experimentally for both uncoated and coated Microstrip Gas Counters (MSGCs) of different geometries, as well as for MicroGap Counters (MGCs) and for the "Compteur A Trou" (CAT). It was found that in all cases the breakdowns occurred through surface streamers, although the exact mechanism of streamer formation depended on the particular detector design. Based on these studies, new designs of microstrip detectors, in which the role of the substrate was minimized, were elaborated and tested. In some of these detectors, especially with large pitches (greater than 2mm), gains up to 2-3 x 10(exp 5) were achieved together with good rate characteristics. The ultimate gain limit in all geometries was still set by spark-inducing streamers which appeared at some critical charge density in the avalanche. To avoid this, and particularly to enhance the performance of small-pitch MSGCs, preamplification structures can be used. Utilizing a parallel plate avalanche chamber as a front end to an MSGC resulted in an overall gain of approximately 10(exp 6), limited in this case only by charge saturation.

  19. Analysis of Logistics Costs of the Ukrainian Semiconductor Industry

    OpenAIRE

    Popova Viktoriya D.

    2014-01-01

    The goal of the article is analysis of logistics costs in production of semiconductor materials using example of two Ukrainian enterprises. The article studies influence of logistics management and logistics costs upon formation of the final cost value (price) of a commodity (service). It gives an assessment of logistics costs of Ukrainian semiconductor enterprises and establishes its structure by types of main expenditure items: material, transport, production and storehouse. It establishes ...

  20. The Cosmic History of Hot Gas Cooling and Radio AGN Activity in Massive Early-Type Galaxies

    Science.gov (United States)

    Danielson, A. L. R.; Lehmer, B. D.; Alexander, D. M.; Brandt, W. M.; Luo, B.; Miller, N.; Xue, Y. Q.; Stott, J. P.

    2012-01-01

    We study the X-ray properties of 393 optically selected early-type galaxies (ETGs) over the redshift range of z approx equals 0.0-1.2 in the Chandra Deep Fields. To measure the average X-ray properties of the ETG population, we use X-ray stacking analyses with a subset of 158 passive ETGs (148 of which were individually undetected in X-ray). This ETG subset was constructed to span the redshift ranges of z = 0.1-1.2 in the approx equals 4 Ms CDF-S and approx equals 2 Ms CDF-N and z = 0.1-0.6 in the approx equals 250 ks E-CDF-S where the contribution from individually undetected AGNs is expected to be negligible in our stacking. We find that 55 of the ETGs are detected individually in the X-rays, and 12 of these galaxies have properties consistent with being passive hot-gas dominated systems (i.e., systems not dominated by an X-ray bright Active Galactic Nucleus; AGN). On the basis of our analyses, we find little evolution in the mean 0.5-2 keY to B-band luminosity ratio (L(sub x) /L(sub Beta) varies as [1 +z]) since z approx equals 1.2, implying that some heating mechanism prevents the gas from cooling in these systems. We consider that feedback from radio-mode AGN activity could be responsible for heating the gas. We select radio AGNs in the ETG population using their far-infrared/radio flux ratio. Our radio observations allow us to constrain the duty cycle history of radio AGN activity in our ETG sample. We estimate that if scaling relations between radio and mechanical power hold out to z approx equals 1.2 for the ETG population being studied here, the average mechanical power from AGN activity is a factor of approx equals1.4 -- 2.6 times larger than the average radiative cooling power from hot gas over the redshift range z approx equals 0-1.2. The excess of inferred AGN mechanical power from these ETGs is consistent with that found in the local Universe for similar types of galaxies.

  1. Semiconductor data book characteristics of approx. 10,000 transistors, FETs, UJTs, diodes, rectifiers, optical semiconductors, triacs and SCRs

    CERN Document Server

    Ball, A M

    1981-01-01

    Semiconductor Data Book, 11th Edition presents tables for ratings and characteristics of transistors and multiple transistors; silicon field effect transistors; unijunction transistors; low power-, variable-, power rectifier-, silicon reference-, and light emitting diodes; photodetectors; triacs; thyristors; lead identification; and transistor comparable types. The book starts by providing an introduction and explanation of tables and manufacturers' codes and addresses. Professionals requiring such data about semiconductors will find the book useful.

  2. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  3. Physics of Organic Semiconductors

    CERN Document Server

    Brütting, Wolfgang

    2005-01-01

    Filling the gap in the literature currently available, this book presents an overview of our knowledge of the physics behind organic semiconductor devices. Contributions from 18 international research groups cover various aspects of this field, ranging from the growth of organic layers and crystals, their electronic properties at interfaces, their photophysics and electrical transport properties to the application of these materials in such different devices as organic field-effect transistors, photovoltaic cells and organic light-emitting diodes. From the contents:. * Excitation Dynamics in O

  4. Semiconductor characterization for optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Miner, C.J. [Bell Northern Research Ltd., Ottawa, ON (Canada)

    1996-03-01

    Scanning reflectance spectroscopy, scanning photoluminescence, and double crystal x-ray diffraction mapping are all specialized non-destructive characterization tools which monitor the advanced materials used in the development of high speed optoelectronics. Each technology was described and their application in the assessment of III-V semiconductor composition, layer thickness and defect density was demonstrated. The new techniques have been optimized for speed, to make high spatial resolution mapping practical. Since the tests are non-destructive, frequent monitoring is possible. 11 refs., 7 figs.

  5. Basic properties of semiconductors

    CERN Document Server

    Landsberg, PT

    2013-01-01

    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  6. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  7. Semiconductor Properties Near Interfaces.

    Science.gov (United States)

    1980-07-31

    Sputtered from Semiconductors", Proc. 13th Annual Conference of the Microbeam Analysis Society, 1978. 4. J. C. Potosky and D. B. Wittry, "The Secondary...Ion Optics of a Quadru- pole Ion Microprobe", Proc. 13th Annual Conference of the Microbeam Analysis Society, 1978. 5. F. Guo and D. B. Wittry, "Use...of Specimen Current Integration in SIMS", Proc. 13th Annual Conference of the Microbeam Analysis Society, 1978. 6. D. B. Wittry, ’. Y. Yin, and R. A

  8. Hydrogen in semiconductors

    CERN Document Server

    Pankove, Jacques I

    1991-01-01

    Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed cove

  9. Raman spectra of Cu{sub 2}B{sup II}C{sup IV}X{sub 4}{sup VI} magnetic quaternary semiconductor compounds with tetragonal stannite type structure

    Energy Technology Data Exchange (ETDEWEB)

    Rincón, C., E-mail: crincon@ula.ve; Quintero, M.; Power, Ch.; Moreno, E.; Quintero, E.; Morocoima, M. [Centro de Estudios de Semiconductores, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida (Venezuela, Bolivarian Republic of); Henao, J. A.; Macías, M. A. [Grupo de Investigación en Química Estructural, Facultad de Ciencias, Escuela de Química, Universidad Industrial de Santander, Apartado Aéreo 678, Bucaramanga (Colombia)

    2015-05-28

    A comparative study of the Raman spectra of Cu{sub 2}B{sup II}C{sup IV}S{sub 4}{sup VI} and Cu{sub 2}B{sup II}C{sup IV}Se{sub 4}{sup VI}(where B = Mn or Fe) magnetic quaternary semiconductor compounds with stannite-type structure (I4{sup ¯}2m) has been done. Most of the fourteen Raman lines expected for these materials were observed in the spectra. The two strongest lines observed have been assigned to the IR inactive A{sub 1}{sup 1} and A{sub 1}{sup 2} stannite modes that originated from the motion of the S or Se anion around the Cu and C{sup IV} cations remaining at rest. The shift in the frequency of these two lines of about 150 cm{sup −1} to lower energies observed in Cu{sub 2}B{sup II}C{sup IV}Se{sub 4}{sup VI} compounds as compared to those in Cu{sub 2}B{sup II}C{sup IV}S{sub 4}{sup VI} ones, can then be explained as due to the anion mass effect. Based on the fact that values of these frequencies depend mainly on anion mass and bond-stretching forces between nearest-neighbor atoms, the vibrational frequencies v{sup ¯}(A{sub 1}{sup 2}) and v{sup ¯}(A{sub 1}{sup 2}) of both modes for several Cu{sub 2}B{sup II}C{sup IV}X{sub 4}{sup VI} stannite compounds (where X = S, Se, or Te) very close to the experimental data reported for these materials were calculated from a simple model that relates these stretching forces to the anion-cation bond-distances.

  10. Transparent Oxide Semiconductors for Emerging Electronics

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso

    2013-11-01

    Transparent oxide electronics have emerged as promising materials to shape the future of electronics. While several n-type oxides have been already studied and demonstrated feasibility to be used as active materials in thin film transistors, high performance p-type oxides have remained elusive. This dissertation is devoted to the study of transparent p-type oxide semiconductor tin monoxide and its use in the fabrication of field effect devices. A complete study on the deposition of tin monoxide thin films by direct current reactive magnetron sputtering is performed. Carrier density, carrier mobility and conductivity are studied over a set of deposition conditions where p-type conduction is observed. Density functional theory simulations are performed in order to elucidate the effect of native defects on carrier mobility. The findings on the electrical properties of SnO thin films are then translated to the fabrication of thin films transistors. The low processing temperature of tin monoxide thin films below 200 oC is shown advantageous for the fabrication of fully transparent and flexible thin film transistors. After careful device engineering, including post deposition annealing temperature, gate dielectric material, semiconductor thickness and source and drain electrodes material, thin film transistors with record device performance are demonstrated, achieving a field effect mobility >6.7 cm2V-1s-1. Device performance is further improved to reach a field effect mobility of 10.8 cm2V-1s-1 in SnO nanowire field effect transistors fabricated from the sputtered SnO thin films and patterned by electron beam lithography. Downscaling device dimension to nano scale is shown beneficial for SnO field effect devices not only by achieving a higher hole mobility but enhancing the overall device performance including better threshold voltage, subthreshold swing and lower number of interfacial defects. Use of p-type semiconductors in nonvolatile memory applications is then

  11. Oxygen partial pressure effects on the RF sputtered p-type NiO hydrogen gas sensors

    Science.gov (United States)

    Turgut, Erdal; Çoban, Ömer; Sarıtaş, Sevda; Tüzemen, Sebahattin; Yıldırım, Muhammet; Gür, Emre

    2018-03-01

    NiO thin films were grown by Radio Frequency (RF) Magnetron Sputtering method under different oxygen partial pressures, which are 0.6 mTorr, 1.3 mTorr and 2.0 mTorr. The effects of oxygen partial pressures on the thin films were analyzed through Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), X-ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS) and Hall measurements. The change in the surface morphology of the thin films has been observed with the SEM and AFM measurements. While nano-pyramids have been obtained on the thin film grown at the lowest oxygen partial pressure, the spherical granules lower than 60 nm in size has been observed for the samples grown at higher oxygen partial pressures. The shift in the dominant XRD peak is realized to the lower two theta angle with increasing the oxygen partial pressures. XPS measurements showed that the Ni2p peak involves satellite peaks and two oxidation states of Ni, Ni2+ and Ni3+, have been existed together with the corresponding splitting in O1s spectrum. P-type conductivity of the grown NiO thin films are confirmed by the Hall measurements with concentrations on the order of 1013 holes/cm-3. Gas sensor measurements revealed minimum of 10% response to the 10 ppm H2 level. Enhanced responsivity of the gas sensor devices of NiO thin films is shown as the oxygen partial pressure increases.

  12. Low-Temperature Synthesis and Gas Sensitivity of Perovskite-Type LaCoO3 Nanoparticles

    Directory of Open Access Journals (Sweden)

    Lorenzo Gildo Ortiz

    2014-01-01

    Full Text Available LaCoO3 nanoparticles with perovskite-type structure were prepared by a microwave-assisted colloidal method. Lanthanum nitrate, cobalt nitrate, and ethylenediamine were used as precursors and ethyl alcohol as solvent. The thermal decomposition of the precursors leads to the formation of LaCoO3 from a temperature of 500°C. The structural, morphological, and compositional properties of LaCoO3 nanoparticles were studied in this work by X-ray diffraction (XRD, scanning electron microscopy (SEM, transmission electron microscopy (TEM, and atomic force microscopy (AFM. Pellets were manufactured in order to test the gas sensing properties of LaCoO3 powders in carbon monoxide (CO and propane (C3H8 atmospheres. Agglomerates of nanoparticles with high connectivity, forming a porous structure, were observed from SEM and TEM analysis. LaCoO3 pellets presented a high sensitivity in both CO and C3H8 at different concentrations and operating temperatures. As was expected, sensitivity increased with the gas concentration and operation temperature increase.

  13. The results of pre-design studies on the development of a new design of gas turbine compressor package of GPA-C-16 type

    Science.gov (United States)

    Smirnov, A. V.; Chobenko, V. M.; Shcherbakov, O. M.; Ushakov, S. M.; Parafiynyk, V. P.; Sereda, R. M.

    2017-08-01

    The article summarizes the results of analysis of data concerning the operation of turbocompressor packages at compressor stations for the natural gas transmission system of Ukraine. The basic requirements for gas turbine compressor packages used for modernization and reconstruction of compressor stations are considered. Using a 16 MW gas turbine package GPA-C-16S/76-1,44M1 as an example, the results of pre-design studies and some technical solutions that improve the energy efficiency of gas turbine compressor packages and their reliability, as well as its environmental performance are given. In particular, the article deals with the matching of performance characteristics of a centrifugal compressor (hereinafter compressor) and gas turbine drive to reduce fuel gas consumption; as well as application of energy efficient technologies, in particular, exhaust gas heat recovery units and gas-oil heat exchangers in turbocompressor packages oil system; as well as reducing emissions of carbon monoxide into the atmosphere using a catalytic exhaust system. Described technical solutions can be used for development of other types of gas turbine compressor packages.

  14. On the Time Variation of Dust Extinction and Gas Absorption for Type Ia Supernovae Observed through a Nonuniform Interstellar Medium

    Science.gov (United States)

    Huang, X.; Aldering, G.; Biederman, M.; Herger, B.

    2017-11-01

    For Type Ia supernovae (SNe Ia) observed through a nonuniform interstellar medium (ISM) in its host galaxy, we investigate whether the nonuniformity can cause observable time variations in dust extinction and in gas absorption due to the expansion of the SN photosphere with time. We show that, owing to the steep spectral index of the ISM density power spectrum, sizable density fluctuation amplitudes at the length scale of typical ISM structures (≳ 10 {pc}) will translate to much smaller fluctuations on the scales of an SN photosphere. Therefore, the typical amplitude of time variation due to a nonuniform ISM, of absorption equivalent widths, and of extinction, would be small. As a result, we conclude that nonuniform ISM density should not impact cosmology measurements based on SNe Ia. We apply our predictions based on the ISM density power-law power spectrum to the observations of two highly reddened SNe Ia, SN 2012cu and SN 2014J.

  15. THE EFFECT OF TYPE ZEOLITE ON THE GAS TRANSPORT PROPERTIES OF POLYIMIDE-BASED MIXED MATRIX MEMBRANES

    Directory of Open Access Journals (Sweden)

    Tutuk Djoko Kusworo

    2012-01-01

    Full Text Available The permeation rates of O2, N2, CO2 and CH4 has been studied for polyimide-polyethersulfone (PI/PES blends-zeolite mixed matrix membranes synthesized in our laboratory. The study investigated the effect of zeolite loading and different zeolite type on the gas separation performance of these mixed matrix membranes. Frequency shifts and absorption intensity changes in the FTIR spectra of the PI/PES blends as compared with those of the pure polymers indicate that there is a mixing of polymer blends at the molecular level. Differential scanning calorimetry measurements of pure and PI/PES blends membranes have showed one unique glass transition temperature that supports the miscible character of the PI/PES mixture. The PI/PES-zeolite 4A mixed matrix membrane with 25 wt % zeolite loading produced the highest O2/N2 and CO2/CH4 selectivity of around 7.45 and 46.05, respectively.

  16. Irregular Liesegang-type patterns in gas phase revisited. II. Statistical correlation analysis

    Science.gov (United States)

    Torres-Guzmán, José C.; Martínez-Mekler, Gustavo; Müller, Markus F.

    2016-05-01

    We present a statistical analysis of Liesegang-type patterns formed in a gaseous HCl-NH3 system by ammonium chloride precipitation along glass tubes, as described in Paper I [J. C. Torres-Guzmán et al., J. Chem. Phys. 144, 174701 (2016)] of this work. We focus on the detection and characterization of short and long-range correlations within the non-stationary sequence of apparently irregular precipitation bands. To this end we applied several techniques to estimate spatial correlations stemming from different fields, namely, linear auto-correlation via the power spectral density, detrended fluctuation analysis (DFA), and methods developed in the context of random matrix theory (RMT). In particular RMT methods disclose well pronounced long-range correlations over at least 40 bands in terms of both, band positions and intensity values. By using a variant of the DFA we furnish proof of the nonlinear nature of the detected long-range correlations.

  17. Cold CO Gas in the Envelopes of FU Orionis-type Young Eruptive Stars

    Energy Technology Data Exchange (ETDEWEB)

    Kóspál, Á.; Ábrahám, P.; Moór, A. [Konkoly Observatory, Research Centre for Astronomy and Earth Sciences, Hungarian Academy of Sciences, Konkoly-Thege Miklós út 15-17, 1121 Budapest (Hungary); Csengeri, T.; Güsten, R. [Max-Planck-Institut für Radioastronomie, Auf dem Hügel 69, D-53121 Bonn (Germany); Henning, Th. [Max-Planck-Institut für Astronomie, Königstuhl 17, D-69117 Heidelberg (Germany)

    2017-02-20

    FU Orionis-type objects (FUors) are young stellar objects experiencing large optical outbursts due to highly enhanced accretion from the circumstellar disk onto the star. FUors are often surrounded by massive envelopes, which play a significant role in the outburst mechanism. Conversely, the subsequent eruptions might gradually clear up the obscuring envelope material and drive the protostar on its way to become a disk-only T Tauri star. Here we present an APEX {sup 12}CO and {sup 13}CO survey of eight southern and equatorial FUors. We measure the mass of the gaseous material surrounding our targets, locate the source of the CO emission, and derive physical parameters for the envelopes and outflows, where detected. Our results support the evolutionary scenario where FUors represent a transition phase from envelope-surrounded protostars to classical T Tauri stars.

  18. Squeezed light in semiconductors

    CERN Document Server

    Ward, M B

    2001-01-01

    Experimental evidence is presented for the generation of photon-number squeezed states of light as a result of multi-photon absorption. Photon-number squeezing as a result of non-linear absorption has long been predicted and results have been obtained utilising two very different material systems: (i) an AIGaAs waveguide in which high optical intensities can be maintained over a relatively long interaction length of 2 mm; (ii) the organic polymer p-toluene sulphonate polydiacetylene that is essentially a one-dimensional semiconductor possessing a highly nonlinear optical susceptibility. The resulting nonlinear absorption is shown to leave the transmitted light in a state that is clearly nonclassical, exhibiting photon-number fluctuations below the shot-noise limit. Tuning the laser wavelength across the half-bandgap energy has enabled a comparison between two- and three-photon processes in the semiconductor waveguide. The correlations created between different spectral components of a pulsed beam of light as ...

  19. Doped semiconductor nanocrystal junctions

    Energy Technology Data Exchange (ETDEWEB)

    Borowik, Ł.; Mélin, T., E-mail: thierry.melin@isen.iemn.univ-lille1.fr [Institut d’Electronique, de Microélectronique et de Nanotechnologie, CNRS-UMR8520, Avenue Poincaré, F-59652 Villeneuve d’Ascq (France); Nguyen-Tran, T.; Roca i Cabarrocas, P. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS-UMR7647, Ecole Polytechnique, F-91128 Palaiseau (France)

    2013-11-28

    Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (N{sub D}≈10{sup 20}−10{sup 21}cm{sup −3}) silicon nanocrystals (NCs) in the 2–50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that the charge transfer from doped NCs towards a two-dimensional layer experimentally follows a simple phenomenological law, corresponding to formation of an interface dipole linearly increasing with the NC diameter. This feature leads to analytically predictable junction properties down to quantum size regimes: NC depletion width independent of the NC size and varying as N{sub D}{sup −1/3}, and depleted charge linearly increasing with the NC diameter and varying as N{sub D}{sup 1/3}. We thus establish a “nanocrystal counterpart” of conventional semiconductor planar junctions, here however valid in regimes of strong electrostatic and quantum confinements.

  20. Determination of amphetamine-type stimulants in oral fluid by solid-phase microextraction and gas chromatography-mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Souza, Daniele Z., E-mail: daniele.dzs@dpf.gov.br [Setor Tecnico-Cientifico, Superintendencia Regional do Departamento de Policia Federal no Rio Grande do Sul, 1365 Ipiranga Avenue, Azenha, Zip Code 90160-093 Porto Alegre, Rio Grande do Sul (Brazil); Programa de Pos-Graduacao em Ciencias Farmaceuticas, Faculdade de Farmacia, Universidade Federal do Rio Grande do Sul, 2752 Ipiranga Avenue, Santana, Zip Code 90610-000 Porto Alegre, Rio Grande do Sul (Brazil); Boehl, Paula O.; Comiran, Eloisa; Mariotti, Kristiane C. [Programa de Pos-Graduacao em Ciencias Farmaceuticas, Faculdade de Farmacia, Universidade Federal do Rio Grande do Sul, 2752 Ipiranga Avenue, Santana, Zip Code 90610-000 Porto Alegre, Rio Grande do Sul (Brazil); Pechansky, Flavio [Centro de Pesquisa em Alcool e Drogas (CPAD), Hospital de Clinicas de Porto Alegre, Universidade Federal do Rio Grande do Sul, 2350, Ramiro Barcelos Street, Zip Code 90035-903 Porto Alegre, Rio Grande do Sul (Brazil); Duarte, Paulina C.A.V. [Secretaria Nacional de Politicas sobre Drogas (SENAD), Esplanada dos Ministerios, Block ' A' , 5th floor, Zip Code 70050-907 Brasilia, Distrito Federal (Brazil); De Boni, Raquel [Centro de Pesquisa em Alcool e Drogas (CPAD), Hospital de Clinicas de Porto Alegre, Universidade Federal do Rio Grande do Sul, 2350, Ramiro Barcelos Street, Zip Code 90035-903 Porto Alegre, Rio Grande do Sul (Brazil); Froehlich, Pedro E.; Limberger, Renata P. [Programa de Pos-Graduacao em Ciencias Farmaceuticas, Faculdade de Farmacia, Universidade Federal do Rio Grande do Sul, 2752 Ipiranga Avenue, Santana, Zip Code 90610-000 Porto Alegre, Rio Grande do Sul (Brazil)

    2011-06-24

    Graphical abstract: Highlights: > Propylchloroformate derivatization of amphetamine-type stimulants in oral fluid. > Direct immersion solid-phase microextraction/gas chromatography-mass spectrometry. > Linear range 2(4)-256 ng mL{sup -1}, detection limits 0.5-2 ng mL{sup -1}. > Accuracy 98-112%, precision <15% of RSD, recovery 77-112%. > Importance of residual evaluation in checking model goodness-of-fit. - Abstract: A method for the simultaneous identification and quantification of amphetamine (AMP), methamphetamine (MET), fenproporex (FEN), diethylpropion (DIE) and methylphenidate (MPH) in oral fluid collected with Quantisal{sup TM} device has been developed and validated. Thereunto, in-matrix propylchloroformate derivatization followed by direct immersion solid-phase microextraction and gas chromatography-mass spectrometry were employed. Deuterium labeled AMP was used as internal standard for all the stimulants and analysis was performed using the selected ion monitoring mode. The detector response was linear for the studied drugs in the concentration range of 2-256 ng mL{sup -1} (neat oral fluid), except for FEN, whereas the linear range was 4-256 ng mL{sup -1}. The detection limits were 0.5 ng mL{sup -1} (MET), 1 ng mL{sup -1} (MPH) and 2 ng mL{sup -1} (DIE, AMP, FEN), respectively. Accuracy of quality control samples remained within 98.2-111.9% of the target concentrations, while precision has not exceeded 15% of the relative standard deviation. Recoveries with Quantisal{sup TM} device ranged from 77.2% to 112.1%. Also, the goodness-of-fit concerning the ordinary least squares model in the statistical inference of data has been tested through residual plotting and ANOVA. The validated method can be easily automated and then used for screening and confirmation of amphetamine-type stimulants in drivers' oral fluid.

  1. Determination of amphetamine-type stimulants in oral fluid by solid-phase microextraction and gas chromatography-mass spectrometry

    International Nuclear Information System (INIS)

    Souza, Daniele Z.; Boehl, Paula O.; Comiran, Eloisa; Mariotti, Kristiane C.; Pechansky, Flavio; Duarte, Paulina C.A.V.; De Boni, Raquel; Froehlich, Pedro E.; Limberger, Renata P.

    2011-01-01

    Graphical abstract: Highlights: → Propylchloroformate derivatization of amphetamine-type stimulants in oral fluid. → Direct immersion solid-phase microextraction/gas chromatography-mass spectrometry. → Linear range 2(4)-256 ng mL -1 , detection limits 0.5-2 ng mL -1 . → Accuracy 98-112%, precision TM device has been developed and validated. Thereunto, in-matrix propylchloroformate derivatization followed by direct immersion solid-phase microextraction and gas chromatography-mass spectrometry were employed. Deuterium labeled AMP was used as internal standard for all the stimulants and analysis was performed using the selected ion monitoring mode. The detector response was linear for the studied drugs in the concentration range of 2-256 ng mL -1 (neat oral fluid), except for FEN, whereas the linear range was 4-256 ng mL -1 . The detection limits were 0.5 ng mL -1 (MET), 1 ng mL -1 (MPH) and 2 ng mL -1 (DIE, AMP, FEN), respectively. Accuracy of quality control samples remained within 98.2-111.9% of the target concentrations, while precision has not exceeded 15% of the relative standard deviation. Recoveries with Quantisal TM device ranged from 77.2% to 112.1%. Also, the goodness-of-fit concerning the ordinary least squares model in the statistical inference of data has been tested through residual plotting and ANOVA. The validated method can be easily automated and then used for screening and confirmation of amphetamine-type stimulants in drivers' oral fluid.

  2. Gas sensing in 2D materials

    Science.gov (United States)

    Yang, Shengxue; Jiang, Chengbao; Wei, Su-huai

    2017-06-01

    Two-dimensional (2D) layered inorganic nanomaterials have attracted huge attention due to their unique electronic structures, as well as extraordinary physical and chemical properties for use in electronics, optoelectronics, spintronics, catalysts, energy generation and storage, and chemical sensors. Graphene and related layered inorganic analogues have shown great potential for gas-sensing applications because of their large specific surface areas and strong surface activities. This review aims to discuss the latest advancements in the 2D layered inorganic materials for gas sensors. We first elaborate the gas-sensing mechanisms and introduce various types of gas-sensing devices. Then, we describe the basic parameters and influence factors of the gas sensors to further enhance their performance. Moreover, we systematically present the current gas-sensing applications based on graphene, graphene oxide (GO), reduced graphene oxide (rGO), functionalized GO or rGO, transition metal dichalcogenides, layered III-VI semiconductors, layered metal oxides, phosphorene, hexagonal boron nitride, etc. Finally, we conclude the future prospects of these layered inorganic materials in gas-sensing applications.

  3. A Comparative Study of the Gas Sensing Behavior in P3HT- and PBTTT-Based OTFTs: The Influence of Film Morphology and Contact Electrode Position

    Directory of Open Access Journals (Sweden)

    Kyriaki Manoli

    2014-09-01

    Full Text Available Bottom- and top-contact organic thin film transistors (OTFTs were fabricated, using poly(3-hexylthiophene-2,5-diyl (P3HT and poly[2,5-bis(3-tetradecylthiophen-2-ylthieno[3,2-b]thiophene] (PBTTT-C16 as p-type channel semiconductors. Four different types of OTFTs were fabricated and investigated as gas sensors against three volatile organic compounds, with different associated dipole moments. The OTFT-based sensor responses were evaluated with static and transient current measurements. A comparison between the different architectures and the relative organic semiconductor was made.

  4. Process for producing chalcogenide semiconductors

    Science.gov (United States)

    Noufi, R.; Chen, Y.W.

    1985-04-30

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  5. Progress in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Walton, J.; Gatti, E.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

  6. Terahertz Nonlinear Optics in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

  7. Optical coherent control in semiconductors

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

  8. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  9. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  10. Semiconductor photocatalysis principles and applications

    CERN Document Server

    Kisch, Horst

    2014-01-01

    Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

  11. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  12. Electrostatic Doping in Semiconductor Devices

    NARCIS (Netherlands)

    Gupta, Gaurav; Rajasekharan, Bijoy; Hueting, Raymond J.E.

    2017-01-01

    To overcome the limitations of chemical doping in nanometer-scale semiconductor devices, electrostatic doping (ED) is emerging as a broadly investigated alternative to provide regions with a high electron or hole density in a semiconductor device. In this paper, we review various reported ED

  13. Luminescence studies of semiconductor electrodes

    NARCIS (Netherlands)

    Kelly, J.J.; Kooij, Ernst S.; Meulenkamp, E.A.

    1999-01-01

    In this paper we review our recent results of in-situ luminescence studies of semiconductor electrodes. Three classes of materials are considered: single crystal compound semiconductors, porous silicon and semiconducting oxides doped with luminescent ions. We show how photoluminescence (PL) and

  14. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  15. Current Status of Nonvolatile Semiconductor Memory Technology

    Science.gov (United States)

    Fujisaki, Yoshihisa

    2010-10-01

    In this report, an overview of the current status of nonvolatile semiconductor memory technology is presented. We are reaching the integration limit of flash memories, and many new types of memories to replace conventional flash memories have been proposed. Unlike flash memories, new nonvolatile memories do not require electric charge storing. The possibility of phase-change random access memory (PRAM) or resistive-change RAM (ReRAM) replacing ultrahigh-density NAND flash memories has been discussed; however, there are many issues to overcome, making the replacement difficult. Nonetheless, ferroelectric RAMs (FeRAMs) and MRAMs are gradually penetrating into fields where the shortcomings of flash memories, such as high operating voltage, slow rewriting speed, and limited number of rewrites, make their use inconvenient. For the successful application of new nonvolatile semiconductor memories, they must be practically utilized in new fields in which flash memories are not applicable, and the technology for them must be developed.

  16. Semiconductor industry wafer fab exhaust management

    CERN Document Server

    Sherer, Michael J

    2005-01-01

    Given the myriad exhaust compounds and the corresponding problems that they can pose in an exhaust management system, the proper choice of such systems is a complex task. Presenting the fundamentals, technical details, and general solutions to real-world problems, Semiconductor Industry: Wafer Fab Exhaust Management offers practical guidance on selecting an appropriate system for a given application. Using examples that provide a clear understanding of the concepts discussed, Sherer covers facility layout, support facilities operations, and semiconductor process equipment, followed by exhaust types and challenges. He reviews exhaust point-of-use devices and exhaust line requirements needed between process equipment and the centralized exhaust system. The book includes information on wet scrubbers for a centralized acid exhaust system and a centralized ammonia exhaust system and on centralized equipment to control volatile organic compounds. It concludes with a chapter devoted to emergency releases and a separ...

  17. Catalyzed reactions at illuminated semiconductor interfaces

    International Nuclear Information System (INIS)

    Wrighton, M.S.

    1984-01-01

    Many desirable minority carrier chemical redox processes are too slow to compete with e - -h + recombination at illuminated semiconductor/liquid electrolyte junction interfaces. Reductions of H 2 O to H 2 or CO 2 to compounds having C--H bonds are too slow to compete with e - -h + recombination at illuminated p-type semiconductors, for example. Approaches to improve the rate of the desired processes involving surface modification techniques are described. Photoanodes are plagued by the additional problem of oxidative decomposition under illumination with > or =E/sub g/ illumination. The photo-oxidation of Cl - , Br - , and H 2 O is considered to illustrate the concepts involved. Proof of concept experiments establish that catalysis can be effective in dramatically improving direct solar fuel production; efficiencies of >10% have been demonstrated

  18. Numerical investigation of metal-semiconductor-insulator-semiconductor passivated hole contacts based on atomic layer deposited AlO x

    Science.gov (United States)

    Ke, Cangming; Xin, Zheng; Ling, Zhi Peng; Aberle, Armin G.; Stangl, Rolf

    2017-08-01

    Excellent c-Si tunnel layer surface passivation has been obtained recently in our lab, using atomic layer deposited aluminium oxide (ALD AlO x ) in the tunnel layer regime of 0.9 to 1.5 nm, investigated to be applied for contact passivation. Using the correspondingly measured interface properties, this paper compares the theoretical collection efficiency of a conventional metal-semiconductor (MS) contact on diffused p+ Si to a metal-semiconductor-insulator-semiconductor (MSIS) contact on diffused p+ Si or on undoped n-type c-Si. The influences of (1) the tunnel layer passivation quality at the tunnel oxide interface (Q f and D it), (2) the tunnel layer thickness and the electron and hole tunnelling mass, (3) the tunnel oxide material, and (4) the semiconductor capping layer material properties are investigated numerically by evaluation of solar cell efficiency, open-circuit voltage, and fill factor.

  19. Point Defects in Two-Dimensional Layered Semiconductors: Physics and Its Applications

    Science.gov (United States)

    Suh, Joonki

    Recent advances in material science and semiconductor processing have been achieved largely based on in-depth understanding, efficient management and advanced application of point defects in host semiconductors, thus finding the relevant techniques such as doping and defect engineering as a traditional scientific and technological solution. Meanwhile, two- dimensional (2D) layered semiconductors currently draw tremendous attentions due to industrial needs and their rich physics at the nanoscale; as we approach the end of critical device dimensions in silicon-based technology, ultra-thin semiconductors have the potential as next- generation channel materials, and new physics also emerges at such reduced dimensions where confinement of electrons, phonons, and other quasi-particles is significant. It is therefore rewarding and interesting to understand and redefine the impact of lattice defects by investigating their interactions with energy/charge carriers of the host matter. Potentially, the established understanding will provide unprecedented opportunities for realizing new functionalities and enhancing the performance of energy harvesting and optoelectronic devices. In this thesis, multiple novel 2D layered semiconductors, such as bismuth and transition- metal chalcogenides, are explored. Following an introduction of conventional effects induced by point defects in semiconductors, the related physics of electronically active amphoteric defects is revisited in greater details. This can elucidate the complication of a two-dimensional electron gas coexisting with the topological states on the surface of bismuth chalcogenides, recently suggested as topological insulators. Therefore, native point defects are still one of the keys to understand and exploit topological insulators. In addition to from a fundamental science point of view, the effects of point defects on the integrated thermal-electrical transport, as well as the entropy-transporting process in

  20. Semiconductor Laser Complex Dynamics: From Optical Neurons to Optical Rogue Waves

    Science.gov (United States)

    2017-02-11

    AFRL-AFOSR-UK-TR-2017-0009 Semiconductor laser complex dynamics: from optical neurons to optical rogue waves Christina Masoller UNIVERSIDAD...11-02-2017 2. REPORT TYPE Final 3. DATES COVERED (From - To) 30 Sep 2014 to 29 Sep 2016 4. TITLE AND SUBTITLE Semiconductor laser complex dynamics...dynamics of semiconductor lasers with two main goals: i) to advance our understanding of nonlinear and stochastic phenomena and ii) to exploit the

  1. Semiconductor testing method

    International Nuclear Information System (INIS)

    Brown, Stephen.

    1992-01-01

    In a method of avoiding use of nuclear radiation, eg gamma rays, X-rays, electron beams, for testing semiconductor components for resistance to hard radiation, which hard radiation causes data corruption in some memory devices and 'latch-up' in others, similar fault effects can be achieved using a xenon or other 'light' flash gun even though the penetration of light is significantly less than that of gamma rays. The method involves treating a device with gamma radiation, measuring a particular fault current at the onset of a fault event, repeating the test with light to confirm the occurrence of the fault event at the same measured fault current, and using the fault current value as a reference for future tests using light on similar devices. (author)

  2. Hydrogen in compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, E.E.

    1993-05-01

    Progress in the understanding of hydrogen and its interactions in III/V and II/VI compound semiconductors is reviewed. Donor, acceptor and deep level passivation is well established in III/V compounds based on electrical measurements and on spectroscopic studies. The hydrogen donor levels in GaAs and GaP are estimated to lie near E{sub v}+0.5 eV and E{sub v}+0.3 eV, respectively. Arsenic acceptors have been passivated by hydrogen in CdTe and the very first nitrogen-hydrogen local vibrational model spectra in ZnSe have been reported. This long awaited result may lead to an explanation for the poor activation of nitrogen acceptors in ZnSe grown by techniques which involve high concentrations of hydrogen.

  3. Geochemical characteristics and genetic types of natural gas in the Changxing-Feixianguan Formations from the Yuanba Gas Field in the Sichuan Basin, China

    Directory of Open Access Journals (Sweden)

    Xiaoqi Wu

    2016-08-01

    Full Text Available The Yuanba Gas Field is a large gas field in the marine strata with the largest burial depth in China up to date. The studies performed on the mentioned gas field have achieved significant progress made possible by determining the characteristics of reef flat reservoirs in the marine strata and the main controlling factors of hydrocarbon accumulation. However, there is no consensus on the origin of natural gases stored in the reservoir in the Changxing-Feixianguan Formations in the Yuanba and its adjacent area. The study on geochemical characteristics indicates that natural gases in the reservoir in the Changxing-Feixianguan Formations in the Yuanba Gas Field are mainly composed of alkane gases which are dominated by methane with dryness coefficients generally higher than 0.995. The CO2 and H2S display an average content of 8.55% and 6.47%, respectively. The δ13C1 and δ13C2 values are from −31.2‰ to −27.9‰, and from −29.9‰ to −25.0‰, respectively, displaying the positive carbon isotopic series. The δ13CCO2 values are generally higher than −8‰, and the δD1 values are from −156‰ to −107‰. The identification of gas origin and gas–source correlation indicate that the natural gases reservoired in the Changxing-Feixianguan Formations in the Yuanba Gas Field have been altered by thermochemical sulfate reduction, and they are mainly composed of oil cracking gases derived from the secondary cracking of oil generated by the sapropelic-prone source rocks in the Permian Longtan Formation. The CO2 in the gas pools are mainly inorganic and were derived from the interaction between the acidic fluid and carbonate reservoirs.

  4. Design and optimization of a non-TEMA type tubular recuperative heat exchanger used in a regenerative gas turbine cycle

    Energy Technology Data Exchange (ETDEWEB)

    Sayyaadi, Hoseyn; Aminian, Hamid Reza [Faculty of Mechanical Engineering-Energy Division, K.N. Toosi University of Technology, P.O. Box: 19395-1999, No. 15-19, Pardis Str., Mollasadra Ave., Vanak Sq., Tehran 1999 143344 (Iran)

    2010-04-15

    A special non-TEMA type tubular recuperative heat exchanger used as a regenerator of a gas turbine cycle is considered for multi-criteria optimization. It is assumed that the recuperator is designed for an existing gas turbine cycle to be retrofitted. Three scenarios for optimization of the proposed system have been considered. In one scenario, the objective is minimizing the cost of recuperator; while in another scenario maximizing the cycle exergetic efficiency is considered. In third scenario, both objectives are optimized simultaneously in a multi-objective optimization approach. Geometric specification of the recuperator including tubes length, tubes outside/inside diameters, tube pitch in the tube bundle, inside shell diameter, outer and inner tube limits of the tube bundle and the total number of disc and doughnut baffles are considered as decision variables. Combination of these objectives and decision variables with suitable engineering and physical constraints (including NO{sub x} and CO emission limitations) makes a set of MINLP optimization problem. Optimization programming in MATLAB is performed using one of the most powerful and robust multi-objective optimization algorithms namely NSGA-II. This approach which is based on the Genetic Algorithm is applied to find a set of Pareto optimal solutions. Pareto optimal frontier is obtained and a final optimal solution is selected in a decision-making process. It is shown that the multi-objective optimization scenario can be considered as a generalized optimization approach in which balances between economical viewpoints of both heat exchanger manufacturer and end user of recuperator. (author)

  5. Effect of organic matter properties, clay mineral type and thermal maturity on gas adsorption in organic-rich shale systems

    Science.gov (United States)

    Zhang, Tongwei; Ellis, Geoffrey S.; Ruppel, Stephen C.; Milliken, Kitty; Lewan, Mike; Sun, Xun; Baez, Luis; Beeney, Ken; Sonnenberg, Steve

    2013-01-01

    A series of CH4 adsorption experiments on natural organic-rich shales, isolated kerogen, clay-rich rocks, and artificially matured Woodford Shale samples were conducted under dry conditions. Our results indicate that physisorption is a dominant process for CH4 sorption, both on organic-rich shales and clay minerals. The Brunauer–Emmett–Teller (BET) surface area of the investigated samples is linearly correlated with the CH4 sorption capacity in both organic-rich shales and clay-rich rocks. The presence of organic matter is a primary control on gas adsorption in shale-gas systems, and the gas-sorption capacity is determined by total organic carbon (TOC) content, organic-matter type, and thermal maturity. A large number of nanopores, in the 2–50 nm size range, were created during organic-matter thermal decomposition, and they significantly contributed to the surface area. Consequently, methane-sorption capacity increases with increasing thermal maturity due to the presence of nanopores produced during organic-matter decomposition. Furthermore, CH4 sorption on clay minerals is mainly controlled by the type of clay mineral present. In terms of relative CH4 sorption capacity: montmorillonite ≫ illite – smectite mixed layer > kaolinite > chlorite > illite. The effect of rock properties (organic matter content, type, maturity, and clay minerals) on CH4 adsorption can be quantified with the heat of adsorption and the standard entropy, which are determined from adsorption isotherms at different temperatures. For clay-mineral rich rocks, the heat of adsorption (q) ranges from 9.4 to 16.6 kJ/mol. These values are considerably smaller than those for CH4 adsorption on kerogen (21.9–28 kJ/mol) and organic-rich shales (15.1–18.4 kJ/mol). The standard entropy (Δs°) ranges from -64.8 to -79.5 J/mol/K for clay minerals, -68.1 to -111.3 J/mol/K for kerogen, and -76.0 to -84.6 J/mol/K for organic-rich shales. The affinity of CH4 molecules for sorption on organic matter

  6. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  7. GaN/NbN epitaxial semiconductor/superconductor heterostructures

    Science.gov (United States)

    Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

    2018-03-01

    Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

  8. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

  9. The Areal Extent of Continuous Type Gas Accumulations in Lower Silurian Clinton Sands and Medina Group Sandstones of the Appalachian Basin and the Environments Affected by Their Development

    Science.gov (United States)

    Wandrey, C.J.; Ryder, Robert T.; Nuccio, Vito F.; Aggen, Kerry L.

    1997-01-01

    In order to best preserve and manage our energy and natural resources we must understand the relationships between these resources and the impacts of their development. To further this understanding the U.S. Geological Survey is studying unconventional continuous-type and, to a lesser extent, conventional oil and gas accumulations and the environmental impacts associated with their development. Continuous-type gas accumulations are generally characterized by low matrix permeabilities, large areal extents, and no distinct water contacts. This basin scale map shows the overall extent of these accumulations and the general land use types that may be impacted by their development. The Appalachian Basin has the longest history of oil and gas exploration and production in the United States. Since Drake's Titusville discovery well was drilled in 1859, oil and gas has been continuously produced in the basin. While there is still a great deal of oil and gas production, new field discoveries are rare and relatively small. For most of the second half of the 20th century the Appalachian basin has been considered a mature petroleum province because most of the large plays have already been discovered and developed. One exception to this trend is the Lower Silurian Clinton Sands and Medina Group Gas play which is being developed in New York, Pennsylvania, and Ohio. This continuous-type gas play has been expanding since the early 1970's (see inset maps). In the 1980's economic incentives such as large increases in wellhead prices further stimulated continuous-type gas resource development. Continuous-type gas plays can be large in areal extent and in thickness. 'Sweetspots' (areas of greater prodcution) are hard to predict and generally associated with better than average permeabilities, and enhanced by natural fracture systems. With an overall success rate often approaching 90%, drilling most of the play with closely spaced wells is often the best way to maximize gas recovery

  10. Selective, electrochemical etching of a semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  11. Magnetoresistive properties of non-uniform state of antiferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Krivoruchko, V.N.

    1996-01-01

    The phenomenological model of magnetoresistive properties of magneto-non-single-phase state of alloyed magnetic semiconductors is considered using the concept derived for a description of magnetoresistive effects in layered and granular magnetic metals. By assuming that there exists a magneto-non-single state in the manganites having the perovskite structure, it is possible to describe, in the framework of above approach, large magnetoresistive effects of manganite phases with antiferromagnetic order and semiconductor-type conductivity as well as those with antiferromagnetic properties and metallic-type conductivity

  12. Distinction of gases with a semiconductor sensor depending on the scanning profile of a cyclic temperature.

    Science.gov (United States)

    Nakata, Satoshi; Okunishi, Hirokazu; Nakashima, Yusuke

    2006-01-01

    A gas-sensing system based on a dynamic nonlinear response is reported to improve the selectivity in the sensor response toward sample gases. A cyclic temperature composed of fundamental and second harmonics was applied to a SnO(2) semiconductor gas sensor and the resulting conductance of the sensor was analyzed by fast Fourier transformation (FFT). The dynamic nonlinear responses to the gas species were further characterized depending on the scanning profile of the temperature. These characteristic sensor responses under the application of second-harmonic perturbation were theoretically considered based on a reaction-diffusion model for the semiconductor surface.

  13. Semiconductor technology program. Progress briefs

    Science.gov (United States)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  14. Rhombohedrel Hybrid Crystal Semiconductor Device

    Data.gov (United States)

    National Aeronautics and Space Administration — Development of a new high speed and high efficiency hybrid crystal structure semiconductor device based on the the recent invention of rhombohedral hybrid crystal...

  15. Semiconductor radiation detectors. Device physics

    Energy Technology Data Exchange (ETDEWEB)

    Lutz, G. [Max-Planck-Institutes for Physics and Extraterrestrial Physics, Muenchen (Germany). Semiconductor Lab.

    2007-07-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  16. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  17. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  18. Semiconductor nanocrystals or quantum dots

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 18; Issue 8. Various Quantum Mechanical Concepts for Confinements in Semiconductor Nanocrystals. Jayakrishna Khatei Karuna Kar Nanda. Classroom Volume 18 Issue 8 August 2013 pp 771-776 ...

  19. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  20. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  1. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  2. Positional Arrangements of Waste Exhaust Gas Ducts of C-Type Balanced Chimney Heating Devices on Building Façades

    Directory of Open Access Journals (Sweden)

    Erkan AVLAR

    2009-01-01

    Full Text Available In Turkey today, with the increase in availability of natural gas,detached heating devices are being preferred over existingheating devices. Due to the lack of chimneys in existing buildingsin Turkey or the presence of chimneys that fail to conformto standards, the use of C-type balanced chimney devices has increased.C-type balanced chimney devices take the combustionair directly from the outside by a specific air duct as detachedheating equipment, with enclosed combustion chambers anda specific waste gas exhaust duct, and they are ventilated independentlyof the field of equipment. Because of their essentiality,the use of a chimney is not required in these devices;the waste gas is exhausted through walls, windows, doors, orbalconies. The natural gas is a clean fossil fuel that requires nostorage in buildings and is easy to use. However, water vapor,carbon dioxide and nitrogen oxides are produced by the combustionof natural gas. It is widely known that high concentrationsof these products can have some adverse effects onhumans such as dizziness, headaches and nausea. As a result,the waste products could recoil through wall openings on thefaçade to create unhealthy indoor environments that could bedangerous to human health. Therefore, the importance of standardsand regulations about the positional arrangements of thewaste gas exhaust ducts of C-type balanced chimney devices onbuilding façades is increasing. In this research, we analyze thestudies of the Institution of Turkish Standards, Chamber of MechanicalEngineers, gas distribution companies, municipalitiesand authorized firms and compare the criteria to determine thenecessary application method. According to our comparison ofthe references accessed, the criteria are not uniform.

  3. Application of gas chromatography-tandem mass spectrometry for the determination of amphetamine-type stimulants in blood and urine.

    Science.gov (United States)

    Woźniak, Mateusz Kacper; Wiergowski, Marek; Aszyk, Justyna; Kubica, Paweł; Namieśnik, Jacek; Biziuk, Marek

    2018-01-30

    Amphetamine, methamphetamine, phentermine, 3,4-methylenedioxyamphetamine (MDA), 3,4-methylenedioxymethamphetamine (MDMA), and 3,4-methylenedioxy-N-ethylamphetamine (MDEA) are the most popular amphetamine-type stimulants. The use of these substances is a serious societal problem worldwide. In this study, a method based on gas chromatography-tandem mass spectrometry (GC-MS/MS) with simple and rapid liquid-liquid extraction (LLE) and derivatization was developed and validated for the simultaneous determination of the six aforementioned amphetamine derivatives in blood and urine. The detection of all compounds was based on multiple reaction monitoring (MRM) transitions. The most important advantage of the method is the minimal sample volume (as low as 200μL) required for the extraction procedure. The validation parameters, i.e., the recovery (90.5-104%), inter-day accuracy (94.2-109.1%) and precision (0.5-5.8%), showed the repeatability and sensitivity of the method for both matrices and indicated that the proposed procedure fulfils internationally established acceptance criteria for bioanalytical methods The procedure was successfully applied to the analysis of real blood and urine samples examined in 22 forensic toxicological cases. To the best of our knowledge, this is the first work presenting the use of GC-MS/MS for the determination of amphetamine-type stimulants in blood and urine. In view of the low limits of detection (0.09-0.81ng/mL), limits of quantification (0.26-2.4ng/mL), and high selectivity, the procedure can be applied for drug monitoring in both fatal and non-fatal intoxication cases in routine toxicology analysis. Copyright © 2017 Elsevier B.V. All rights reserved.

  4. Determination of breath isoprene and acetone concentration with a needle-type extraction device in gas chromatography-mass spectrometry.

    Science.gov (United States)

    Ueta, Ikuo; Mizuguchi, Ayako; Okamoto, Mitsuyoshi; Sakamaki, Hiroyuki; Hosoe, Masahiko; Ishiguro, Motoyuki; Saito, Yoshihiro

    2014-03-20

    Isoprene in human breath is said to be related to cholesterol metabolism, and the possibility of the correlations with some clinical parameters has been studied. However, at this stage, no clear benefit of breath isoprene has been reported for clinical diagnosis. In this work, isoprene and acetone concentrations were measured in the breath of healthy and obese subjects using a needle-type extraction device for subsequent analysis in gas chromatography-mass spectrometry (GC-MS) to investigate the possibility of these compounds as an indicator of possible diseases. After measuring intraday and interday variations of isoprene and acetone concentrations in breath samples of healthy subjects, their concentrations were also determined in 80 healthy and 17 obese subjects. In addition, correlation between these breath concentrations and the blood tests result was studied for these healthy and obese subjects. The results indicated successful determination of breath isoprene and acetone in this work, however, no clear correlation was observed between these measured values and the blood test results. Breath isoprene concentration may not be a useful indicator for obesity or hypercholesterolemia. Copyright © 2014 Elsevier B.V. All rights reserved.

  5. Gas chromatography-mass spectrometric determination of traces of ether-type icing inhibitors in free-floating fuels

    Energy Technology Data Exchange (ETDEWEB)

    Shin, H.S. [Dept. of Environmental Education, Kongju National Univ., Kongju (Korea); Abuse Drug Research Center, Kongju National Univ., Kongju (Korea); Ahn, H.S. [Dept. of Environmental Science, Kongju National Univ., Kongju (Korea)

    2004-08-01

    A gas chromatographic-mass spectrometric (GC-MS) assay method has been developed for simultaneous determination of ethylene glycol monomethyl ether (EGME) and diethylene glycol monomethly ether (DEGME) in spilled aviation fuels. Ethylene glycol monobutyl ether (EGBE) and ethylene glycol monoethyl ether (EGEE) were used as internal standard and surrogate, respectively. Sample preparation consisted of back-extraction with 7 mL dichloromethane after extraction of 50 mL of fuel with 2 mL of water. The extract was concentrated to dryness, dissolved in 100 {mu}L methanol, and analyzed by GC-MS with selected-ion monitoring (SIM). The peaks had good chromatographic properties on a semi-polar column. EGME and DEGME were extracted from fuel with high recovery of 75 and 85%, with small variations, respectively. Method detection limits were 1.3 and 1.0 ng mL{sup -1} for EGME and DEGME, respectively, in spilled fuel. DEGME was detected at concentrations of 22.6 and 19.7 ng mL{sup -1} in two samples from among five free-floating samples collected in a tunnel of a subway station located in the vicinity of an army base in Korea. The method might be useful for differentiation between the fuel-types kerosene and JP-8, which might originate from a storage tank. (orig.)

  6. Determination of amphetamine-type stimulants in oral fluid by solid-phase microextraction and gas chromatography-mass spectrometry.

    Science.gov (United States)

    Souza, Daniele Z; Boehl, Paula O; Comiran, Eloisa; Mariotti, Kristiane C; Pechansky, Flavio; Duarte, Paulina C A V; De Boni, Raquel; Froehlich, Pedro E; Limberger, Renata P

    2011-06-24

    A method for the simultaneous identification and quantification of amphetamine (AMP), methamphetamine (MET), fenproporex (FEN), diethylpropion (DIE) and methylphenidate (MPH) in oral fluid collected with Quantisal™ device has been developed and validated. Thereunto, in-matrix propylchloroformate derivatization followed by direct immersion solid-phase microextraction and gas chromatography-mass spectrometry were employed. Deuterium labeled AMP was used as internal standard for all the stimulants and analysis was performed using the selected ion monitoring mode. The detector response was linear for the studied drugs in the concentration range of 2-256 ng mL(-1) (neat oral fluid), except for FEN, whereas the linear range was 4-256 ng mL(-1). The detection limits were 0.5 ng mL(-1) (MET), 1 ng mL(-1) (MPH) and 2 ng mL(-1) (DIE, AMP, FEN), respectively. Accuracy of quality control samples remained within 98.2-111.9% of the target concentrations, while precision has not exceeded 15% of the relative standard deviation. Recoveries with Quantisal™ device ranged from 77.2% to 112.1%. Also, the goodness-of-fit concerning the ordinary least squares model in the statistical inference of data has been tested through residual plotting and ANOVA. The validated method can be easily automated and then used for screening and confirmation of amphetamine-type stimulants in drivers' oral fluid. Copyright © 2011 Elsevier B.V. All rights reserved.

  7. Simultaneous analysis of amphetamine-type stimulants in plasma by solid-phase microextraction and gas chromatography-mass spectrometry.

    Science.gov (United States)

    Mariotti, Kristiane de Cássia; Schuh, Roselena S; Ferranti, Priscila; Ortiz, Rafael S; Souza, Daniele Z; Pechansky, Flavio; Froehlich, Pedro E; Limberger, Renata P

    2014-09-01

    Brazil is considered one of the countries with the highest number of amphetamine-type stimulant (ATS) users worldwide, mainly diethylpropion (DIE) and fenproporex (FEN). The use of ATS is mostly linked to diverted prescription stimulants and this misuse is widely associated with (ab)use by drivers. A validated method was developed for the simultaneous analysis of amphetamine (AMP), DIE and FEN in plasma samples employing direct immersion-solid-phase microextraction, and gas chromatographic/mass spectrometric analysis. Trichloroacetic acid 10% was used for plasma deproteinization. In situ derivatization with propylchloroformate was employed. The linear range of the method covered from 5.0 to 100 ng/mL. The detection limits were 1.0 (AMP), 1.5 (DIE) and 2.0 ng/mL (FEN). The accuracy assessment of the control samples was within 85.58-108.33% of the target plasma concentrations. Recoveries ranged from 46.35 to 84.46% and precision was <15% of the value of relative standard deviation. This method is appropriate for screening and confirmation in plasma forensic toxicology analyses of these basic drugs. © The Author 2014. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  8. Fine 3D neutronic characterization of a gas-cooled fast reactor based on plate-type sub-assemblies

    International Nuclear Information System (INIS)

    Bosq, J. C.; Peneliau, Y.; Rimpault, G.; Vanier, M.

    2006-01-01

    CEA neutronic studies have allowed the definition of a first 2400 MWth reference gas-cooled fast reactor core using plate-type sub-assemblies, for which the main neutronic characteristics were calculated by the so-called ERANOS 'design calculation scheme' relying on several method approximations. The last stage has consisted in a new refine characterization, using the reference calculation scheme, in order to confirm the impact of the approximations of the design route. A first core lay-out taking into account control rods was proposed and the reactivity penalty due to the control rod introduction in this hexagonal core lay-out was quantified. A new adjusted core was defined with an increase of the plutonium content. This leads to a significant decrease of the breeding gain which needs to be recovered in future design evolutions in order to achieve the self breeding goal. Finally, the safety criteria associated to the control rods were calculated with a first estimation of the uncertainties. All these criteria are respected, even if the safety analysis of GFR concepts and the determination of these uncertainties should be further studied and improved. (authors)

  9. Toward breath analysis on a chip for disease diagnosis using semiconductor-based chemiresistors: recent progress and future perspectives.

    Science.gov (United States)

    Yoon, Ji-Wook; Lee, Jong-Heun

    2017-10-25

    Semiconductor gas sensors using metal oxides, carbon nanotubes, graphene-based materials, and metal chalcogenides have been reviewed from the viewpoint of the sensitive, selective, and reliable detection of exhaled biomarker gases, and perspectives/strategies to realize breath analysis on a chip for disease diagnosis are discussed based on the concurrent design of high-performance sensing materials and miniaturized pretreatment components. Carbon-based sensing materials that show relatively high responses to NO and NH 3 at low or mildly raised temperatures can be applied to the diagnosis of asthma and renal disease. Halitosis can be diagnosed by employing sensing or additive materials such as CuO and Mo that have high chemical affinities for H 2 S, while catalyst-loaded metal oxide nanostructure sensors or their arrays have been used to diagnose diabetes via the selective detection of acetone or by pattern recognition of sensor signals. For the ultimate miniaturization of a breath-analysis system into a tiny chip, preconditioning that includes preconcentration, dehumidification, and flow sensing needs to be either improved through the design of gas/moisture adsorbents or removed/simplified through the design of highly sensitive sensing materials that are less impervious to interference from humidity and temperature. Moreover, an abundant sensing library needs to be provided for the diagnosis of diseases (e.g. lung cancer) that are associated with multiple biomarker gases and for finding new methods to diagnose other diseases. For this aim, p-type oxide semiconductors with high catalytic activities, as well as combinatorial approaches, can be considered for the development of sensing materials that detect less-reactive large molecules, and high-throughput screening, respectively. Selectivity for a specific biomarker gas will simplify the system further. Breath analysis on a tiny chip using semiconductor chemiresistors with ultralow power consumption that is

  10. Reducing leakage current in semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

    2018-03-06

    A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

  11. Fractal properties of nanostructured semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhanabaev, Z.Zh. [Al-Farabi Khazakh National University, Tole bi Street, 96, Almaty 050012 (Kazakhstan); Grevtseva, T.Yu. [Al-Farabi Khazakh National University, Tole bi Street, 96, Almaty 050012 (Kazakhstan)]. E-mail: kenwp@mail.ru

    2007-03-15

    A theory for the temperature and time dependence of current carrier concentration in semiconductors with different non-equilibrium nanocluster structure has been developed. It was shown that the scale-invariant fractal self-similar and self-affine laws can exist near by the transition point to the equilibrium state. Results of the theory have been compared to the experimental data from electrical properties of semiconductor films with nanoclusters.

  12. The Precise Mechanisms of a High-Speed Ultrasound Gas Sensor and Detecting Human-Specific Lung Gas Exchange

    Directory of Open Access Journals (Sweden)

    Hideki Toda

    2012-12-01

    Full Text Available In this paper, we propose and develop a new real-time human respiration process analysis method using a high-time-sampling gas concentration sensor based on ultrasound. A unique point about our proposed gas concentration sensor is its 1 kHz gas concentration sampling speed. This figure could not have been attained by previously proposed gas concentration measurement methods such as InfraRed, semiconductor gas sensors, or GC-MS, because the gas analysis speeds were a maximum of a few hundred milliseconds. First, we describe the proposed new ultrasound sound speed measurement method and the signal processing, and present the measurement circuit diagram. Next, we analyse the human respiration gas variation patterns of five healthy subjects using a newly developed gas-mask-type respiration sensor. This reveals that the rapid gas exchange from H2O to CO2 contains air specific to the human being. In addition, we also measured medical symptoms in subjects suffering from asthma, hyperventilation and bronchial asthma. The millisecond level high-speed analysis of the human respiration process will be useful for the next generation of healthcare, rehabilitation and sports science technology.

  13. Interface state density of SiO2/p-type 4H-SiC ( 0001 ), ( 11 2 ¯ 0 ), ( 1 1 ¯ 00 ) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes

    Science.gov (United States)

    Kobayashi, Takuma; Nakazawa, Seiya; Okuda, Takafumi; Suda, Jun; Kimoto, Tsunenobu

    2016-04-01

    Interface properties of heavily Al-doped 4H-SiC ( 0001 ) (Si-face), ( 11 2 ¯ 0 ) (a-face), and ( 1 1 ¯ 00 ) (m-face) metal-oxide-semiconductor (MOS) structures were characterized from the low-temperature gate characteristics of metal-oxide-semiconductor field-effect transistors (MOSFETs). From low-temperature subthreshold slopes, interface state density (Dit) at very shallow energy levels (ET) near the conduction band edge (Ec) was evaluated. We discovered that the Dit near Ec (Ec - 0.01 eV MOS structures with higher Al doping density for every crystal face (Si-, a-, and m-face). Linear correlation is observed between the channel mobility and Dit near Ec, and we concluded that the mobility drop observed in heavily doped MOSFETs is mainly caused by the increase of Dit near Ec.

  14. Survey of cryogenic semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Talarico, L.J.; McKeever, J.W.

    1996-04-01

    Improved reliability and electronic performance can be achieved in a system operated at cryogenic temperatures because of the reduction in mechanical insult and in disruptive effects of thermal energy on electronic devices. Continuing discoveries of new superconductors with ever increasing values of T{sub c} above that of liquid nitrogen temperature (LNT) have provided incentive for developing semiconductor electronic systems that may also operate in the superconductor`s liquid nitrogen bath. Because of the interest in high-temperature superconductor (HTS) devices, liquid nitrogen is the cryogen of choice and LNT is the temperature on which this review is focused. The purpose of this survey is to locate and assemble published information comparing the room temperature (298 K), performance of commercially available conventional and hybrid semiconductor device with their performance at LNT (77K), to help establish their candidacy as cryogenic electronic devices specifically for use at LNT. The approach to gathering information for this survey included the following activities. Periodicals and proceedings were searched for information on the behavior of semiconductor devices at LNT. Telephone calls were made to representatives of semiconductor industries, to semiconductor subcontractors, to university faculty members prominent for their research in the area of cryogenic semiconductors, and to representatives of the National Aeronautics and Space Administration (NASA) and NASA subcontractors. The sources and contacts are listed with their responses in the introduction, and a list of references appears at the end of the survey.

  15. Assessment of undiscovered continuous oil and gas resources in the Domanik-type formations of the Volga-Ural Region Province, Russia, 2017

    Science.gov (United States)

    Klett, Timothy R.; Brownfield, Michael E.; Finn, Thomas M.; Gaswirth, Stephanie B.; Le, Phuong A.; Leathers-Miller, Heidi M.; Marra, Kristen R.; Mercier, Tracey J.; Pitman, Janet K.; Schenk, Christopher J.; Tennyson, Marilyn E.; Woodall, Cheryl A.

    2018-02-27

    Using a geology-based assessment methodology, the U.S. Geological Survey estimated mean undiscovered, technically recoverable continuous resources of 2.8 billion barrels of oil and 34 trillion cubic feet of gas in the Domanik-type formations of the Volga-Ural Region Province, Russia.

  16. Modelling of dc characteristics for granular semiconductors

    International Nuclear Information System (INIS)

    Varpula, Aapo; Sinkkonen, Juha; Novikov, Sergey

    2010-01-01

    The dc characteristics of granular n-type semiconductors are calculated analytically with the drift-diffusion theory. Electronic trapping at the grain boundaries (GBs) is taken into account. The use of quadratic and linear GB potential profiles in the calculation is compared. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is excellent in a large voltage range. The results show that electronic trapping at the GBs has a remarkable effect on the highly nonlinear I-V characteristics of the material.

  17. Modelling of dc characteristics for granular semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Varpula, Aapo; Sinkkonen, Juha; Novikov, Sergey, E-mail: aapo.varpula@tkk.f [Department of Micro and Nanosciences, Aalto University, PO Box 13500, FI-00076 Aalto, Espoo (Finland)

    2010-11-01

    The dc characteristics of granular n-type semiconductors are calculated analytically with the drift-diffusion theory. Electronic trapping at the grain boundaries (GBs) is taken into account. The use of quadratic and linear GB potential profiles in the calculation is compared. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is excellent in a large voltage range. The results show that electronic trapping at the GBs has a remarkable effect on the highly nonlinear I-V characteristics of the material.

  18. Hydrogen gas production is associated with reduced interleukin-1β mRNA in peripheral blood after a single dose of acarbose in Japanese type 2 diabetic patients.

    Science.gov (United States)

    Tamasawa, Atsuko; Mochizuki, Kazuki; Hariya, Natsuyo; Saito, Miyoko; Ishida, Hidenori; Doguchi, Satako; Yanagiya, Syoko; Osonoi, Takeshi

    2015-09-05

    Acarbose, an α-glucosidase inhibitor, leads to the production of hydrogen gas, which reduces oxidative stress. In this study, we examined the effects of a single dose of acarbose immediately before a test meal on postprandial hydrogen gas in breath and peripheral blood interleukin (IL)-1β mRNA expression in Japanese type 2 diabetic patients. Sixteen Japanese patients (14 men, 2 women) participated in this study. The mean±standard deviation age, hemoglobin A1c and body mass index were 52.1±15.4 years, 10.2±2.0%, and 27.7±8.0kg/m(2), respectively. The patients were admitted into our hospital for 2 days and underwent test meals at breakfast without (day 1) or with acarbose (day 2). We performed continuous glucose monitoring and measured hydrogen gas levels in breath, and peripheral blood IL-1β mRNA levels before (0min) and after the test meal (hydrogen gas: 60, 120, 180, and 300min; IL-1β: 180min). The induction of hydrogen gas production and the reduction in peripheral blood IL-1β mRNA after the test meal were not significant between days 1 (without acarbose) and 2 (with acarbose). However, the changes in total hydrogen gas production from day 1 to day 2 were closely and inversely associated with the changes in peripheral blood IL-1β mRNA levels. Our results suggest that an increase in hydrogen gas production is inversely associated with a reduction of the peripheral blood IL-1β mRNA level after a single dose of acarbose in Japanese type 2 diabetic patients. Copyright © 2015 Elsevier B.V. All rights reserved.

  19. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  20. Epitaxy of Polar Oxides and Semiconductors

    Science.gov (United States)

    Shelton, Christopher Tyrel

    Integrating polar oxide materials with wide-bandgap nitride semiconductors offers the possibility of a tunable 2D carrier gas (2DCG) - provided defect densities are low and interfaces are abrupt. This dissertation investigates a portion of the synthesis science necessary to produce a "semiconductor-grade" interface between these highly dissimilar materials. A significant portion of this work is aligned with efforts to engineer a step-free GaN substrate to produce single in-plane oriented rocksalt oxide films. Initially, we explore the homoepitaxial MOCVD growth conditions necessary to produce highquality GaN films on ammonothermally grown substrates. Ammono substrates are only recently available for purchase and are the market leader in low-dislocation density material. Their novelty requires development of an understanding of morphology trade-offs in processing space. This includes preservation of the epi-polished surface in aggressive MOCVD environments and an understanding of the kinetic barriers affecting growth morphologies. Based on several factors, it was determined that GaN exhibits an 'uphill' diffusion bias that may likely be ascribed to a positive Ehrlich-Schwoebel (ES) barrier. This barrier should have a stabilizing effect against step-bunching but, for many growth conditions, regular step bunching was observed. One possible explanation for the step-bunching instability is the presence of impurities. Experimentally, conditions which incorporate more carbon into GaN homoepitaxial layers are correlated with step-bunching while conditions that suppress carbon produce bilayer stepped morphologies. These observations lead us to the conclusion that GaN homoepitaxial morphology is a competition between impurity induced step-bunching and a stabilizing diffusion bias due to a positive ES barrier. Application of the aforementioned homoepitaxial growth techniques to discrete substrate regions using selected- and confined area epitaxy (SAE,CAE) produces some

  1. Semiconductor Millimeter Wavelength Electronics.

    Science.gov (United States)

    1980-10-01

    Growth for Device Studies An Arsenic Trichloride -Gallium-Hydrogen epitaxial reactor has been built, calibrated, and operated for the growth of...cooling minimizes dopant redistribution in the layers after growth. Aluminum tubing and fittings have been used in the H 2S lines to minimize doping...shown in figure 2. The reactor tube, seed holder and melt boat are constructed of quartz. All the gas lines up to the flow valves, except the aluminum

  2. ALMA OBSERVATIONS OF THE SUBMILLIMETER DENSE MOLECULAR GAS TRACERS IN THE LUMINOUS TYPE-1 ACTIVE NUCLEUS OF NGC 7469

    International Nuclear Information System (INIS)

    Izumi, Takuma; Kohno, Kotaro; Ikarashi, Soh; Aalto, Susanne; Doi, Akihiro; Espada, Daniel; Fathi, Kambiz; Harada, Nanase; Hsieh, Pei-Ying; Matsushita, Satoki; Hatsukade, Bunyo; Hattori, Takashi; Imanishi, Masatoshi; Iono, Daisuke; Ishizuki, Sumio; Nagai, Hiroshi; Krips, Melanie; Martín, Sergio; Meier, David S.; Nakai, Naomasa

    2015-01-01

    We present Atacama Large Millimeter/submillimeter Array (ALMA) Cycle 1 observations of the central kiloparsec region of the luminous type 1 Seyfert galaxy NGC 7469 with unprecedented high resolution (0.″5 ×0.″4 = 165 × 132 pc) at submillimeter wavelengths. Utilizing the wide bandwidth of ALMA, we simultaneously obtained HCN(4–3), HCO + (4–3), CS(7–6), and partially CO(3–2) line maps, as well as the 860 μm continuum. The region consists of the central ∼1″ component and the surrounding starburst ring with a radius of ∼1.″5–2.″5. Several structures connect these components. Except for CO(3–2), these dense gas tracers are significantly concentrated toward the central ∼1″, suggesting their suitability to probe the nuclear regions of galaxies. Their spatial distribution resembles well those of centimeter and mid-infrared continuum emissions, but it is anticorrelated with the optical one, indicating the existence of dust-obscured star formation. The integrated intensity ratios of HCN(4–3)/HCO + (4–3) and HCN(4–3)/CS(7–6) are higher at the active galactic nucleus (AGN) position than at the starburst ring, which is consistent with our previous findings (submillimeter-HCN enhancement). However, the HCN(4–3)/HCO + (4–3) ratio at the AGN position of NGC 7469 (1.11 ± 0.06) is almost half of the corresponding value of the low-luminosity type 1 Seyfert galaxy NGC 1097 (2.0 ± 0.2), despite the more than two orders of magnitude higher X-ray luminosity of NGC 7469. But the ratio is comparable to that of the close vicinity of the AGN of NGC 1068 (∼1.5). Based on these results, we speculate that some heating mechanisms other than X-ray (e.g., mechanical heating due to an AGN jet) can contribute significantly for shaping the chemical composition in NGC 1097

  3. ALMA OBSERVATIONS OF THE SUBMILLIMETER DENSE MOLECULAR GAS TRACERS IN THE LUMINOUS TYPE-1 ACTIVE NUCLEUS OF NGC 7469

    Energy Technology Data Exchange (ETDEWEB)

    Izumi, Takuma; Kohno, Kotaro; Ikarashi, Soh [Institute of Astronomy, School of Science, The University of Tokyo, 2-21-1 Osawa, Mitaka, Tokyo 181-0015 (Japan); Aalto, Susanne [Department of Earth and Space Sciences, Chalmers University of Technology, Onsala Observatory, SE-439 94 Onsala (Sweden); Doi, Akihiro [Institute of Space and Astronautical Science, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara 252-5210 (Japan); Espada, Daniel [Joint ALMA Observatory, Alonso de Córdova, 3107, Vitacura, Santiago 763-0355 (Chile); Fathi, Kambiz [Stockholm Observatory, Department of Astronomy, Stockholm University, AlbaNova Centre, SE-106 91 Stockholm (Sweden); Harada, Nanase; Hsieh, Pei-Ying; Matsushita, Satoki [Academia Sinica, Institute of Astronomy and Astrophysics, P.O. Box 23-141, Taipei 10617, Taiwan (China); Hatsukade, Bunyo; Hattori, Takashi; Imanishi, Masatoshi; Iono, Daisuke; Ishizuki, Sumio; Nagai, Hiroshi [National Astronomical Observatory of Japan, 2-21-1 Osawa, Mitaka, Tokyo 181-8588 (Japan); Krips, Melanie; Martín, Sergio [Institut de Radio Astronomie Millimétrique, 300 rue de la Piscine, Domaine Universitaire, F-38406 St. Martin d’Hères (France); Meier, David S. [Department of Physics, New Mexico Institute of Mining and Technology, 801 Leroy Place, Soccoro, NM 87801 (United States); Nakai, Naomasa, E-mail: takumaizumi@ioa.s.u-tokyo.ac.jp [Department of Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Ten-nodai, Tsukuba, Ibaraki 305-8571 (Japan); and others

    2015-09-20

    We present Atacama Large Millimeter/submillimeter Array (ALMA) Cycle 1 observations of the central kiloparsec region of the luminous type 1 Seyfert galaxy NGC 7469 with unprecedented high resolution (0.″5 ×0.″4 = 165 × 132 pc) at submillimeter wavelengths. Utilizing the wide bandwidth of ALMA, we simultaneously obtained HCN(4–3), HCO{sup +}(4–3), CS(7–6), and partially CO(3–2) line maps, as well as the 860 μm continuum. The region consists of the central ∼1″ component and the surrounding starburst ring with a radius of ∼1.″5–2.″5. Several structures connect these components. Except for CO(3–2), these dense gas tracers are significantly concentrated toward the central ∼1″, suggesting their suitability to probe the nuclear regions of galaxies. Their spatial distribution resembles well those of centimeter and mid-infrared continuum emissions, but it is anticorrelated with the optical one, indicating the existence of dust-obscured star formation. The integrated intensity ratios of HCN(4–3)/HCO{sup +}(4–3) and HCN(4–3)/CS(7–6) are higher at the active galactic nucleus (AGN) position than at the starburst ring, which is consistent with our previous findings (submillimeter-HCN enhancement). However, the HCN(4–3)/HCO{sup +}(4–3) ratio at the AGN position of NGC 7469 (1.11 ± 0.06) is almost half of the corresponding value of the low-luminosity type 1 Seyfert galaxy NGC 1097 (2.0 ± 0.2), despite the more than two orders of magnitude higher X-ray luminosity of NGC 7469. But the ratio is comparable to that of the close vicinity of the AGN of NGC 1068 (∼1.5). Based on these results, we speculate that some heating mechanisms other than X-ray (e.g., mechanical heating due to an AGN jet) can contribute significantly for shaping the chemical composition in NGC 1097.

  4. Quantum transport in semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kubis, Tillmann Christoph

    2009-11-15

    several controversially discussed questions on the nature of transport in this type of nanodevices. In contrast to previous approximate approaches, we show that the nature of transport in QCLs is sensitive to the applied bias voltage and can be tuned from the coherent to the incoherent regime. We point out that the elastic scattering at rough interfaces is among the most efficient incoherent scattering mechanisms in THz-QCLs and significantly influences the laser performance. Up to now, this has been utterly underestimated in approximate studies of THz-QCLs with direct optical transitions. All current theoretical models apply periodic (or field-periodic) boundary conditions on the transport in QCLs. Our revision of the open boundary conditions allows us to consider the QCL as an open quantum devices, instead. In this way, we illustrate that charge distributions in QCLs can develop periodicities that are only commensurable or even incommensurable with the QCL periodicity. This effect leads to efficient non-radiative transitions between the laser levels and is - due to the common periodic boundary conditions - completely missed in literature. We also propose several novel THz-QCLs with larger optical gain, lower thermal load and a higher resistivity against growth imperfections. The third part of this thesis is dedicated to the spin transport in two-dimensional semicon- ductor heterostructures. It is common to apply an approximate envelope function model (EFT) for the spin-orbit interaction in such devices, in spite of the well-known fact that EFT calculations typically incorrectly predict the spin-splitting in semiconductor heterostructures. For this reason, we represent the NEGF method in the EFT model as well as in a microscopic atomistic tight binding model. In the later model, the spin-orbit interaction is treated nonperturbatively going far beyond the approximate EFT model. We show that the numerically efficient EFT model yields results that qualitatively agree with

  5. Effect of gas pressure and gas type on the fragmentation of peptide and oligosaccharide ions generated in an elevated pressure UV/IR-MALDI ion source coupled to an orthogonal time-of-flight mass spectrometer.

    Science.gov (United States)

    Soltwisch, Jens; Souady, Jamal; Berkenkamp, Stefan; Dreisewerd, Klaus

    2009-04-15

    Matrix-assisted laser desorption ionization (MALDI) allows for the mass spectrometric (MS) analysis of thermally labile, non-volatile biomolecules. However, some residual analyte fragmentation typically accompanies the phase transition from the condensed to the gas phase and following plume expansion, even under optimized conditions. In-source decay (ISD) and post-source decay (PSD) MALDI MS are two techniques that make use of these phenomena and that can provide useful structural information by producing characteristic fragment ions of the analyte compounds. In orthogonal extracting time-of-flight mass spectrometry (o-TOF-MS), the pressure of the cooling gas in the ion source has a strong influence on the extent of analyte ion fragmentation. We investigated the effect of this parameter on peptide and oligosaccharide fragmentation by examining a range of pressures (from 0.05-1.8 mbar) in combination with seven different buffer gases (He, Ne, Ar, N(2), CO(2), CH(3), isobutane). Ions were generated by ultraviolet (UV) and/or by infrared (IR) MALDI. The influence of the ion extraction voltage on the analyte fragmentation also was investigated for a selected set of gas parameters. We observed that individual fragment ions exhibit characteristic fragment yield-pressure dependencies that can be classified into three groups. Type I ions resemble species that are also found in MALDI PSD MS analysis, while type II ions resemble typical ISD fragments. The yield-pressure relationship of type III ions suggests that these are the result of a combination of both processes. Comparing the yields of fragmentation for the different buffer gases reveals a correlation between their internal degrees of freedom and their collisional cooling efficiency. Changing the buffer gas pressure and/or extraction field provides an easy means to influence analyte ion fragmentation and to switch from the primary production of one type of fragment species to another. The method can therefore

  6. Kennard-Stepanov relation connecting absorption and emission spectra in an atomic gas.

    Science.gov (United States)

    Moroshkin, Peter; Weller, Lars; Sass, Anne; Klaers, Jan; Weitz, Martin

    2014-08-08

    The Kennard-Stepanov relation describes a thermodynamic, Boltzmann-type scaling between the absorption and emission spectral profiles of an absorber, which applies in many liquid state dye solutions as well as in semiconductor systems. Here we examine absorption and emission spectra of rubidium atoms in a dense argon buffer gas environment. We demonstrate that the Kennard-Stepanov relation between absorption and emission spectra is well fulfilled in the collisionally broadened atomic gas system. Our experimental findings are supported by a simple theoretical model.

  7. Disorder phenomena in covalent semiconductors

    International Nuclear Information System (INIS)

    Popescu, M.A.

    1975-01-01

    The structure of the amorphous semiconductors has been investigated by means of X-ray diffraction and by computer simulation of random network models. Amorphous germanium contains mainly five and six-membered rings of atoms. In glassy state, the ternary compounds A 2 B 4 C 2 5 , such as CdGeAs 2 contain only even rings of atoms (six-membered and eight-membered rings). In the memory glasses of the type A 2 B 4 C 2 5 , such as GeAs 2 Te 7 , the valency state of every element is that from the crystal and important van der Waals forces are effective in the network. No Ge-Ge, Ge-As and As-As bonds are formed. The high pressure forms of the germanium have been simulated by computer. The force constants of the covalent bonds in Ge III and Ge IV differ from those in Ge I. The bond bending force constant decreases rapidly when the density of the crystal increases, a fact which has been imparted to a reduction of the sp 3 hybridization. The compressibility curve of the Ge I has been explained. The effect of the radial and uniaxial deformation on the non-crystalline networks has been studied. The compressibility of the amorphous germanium is by 1.5 per cent greater than that of crystalline germanium. The Poisson coefficient for a-Ge network is 0.233. The structure of the As 2 S 3 glass doped with different amounts of germanium (up to 40 at. per cent) and silver (up to 12 at. per cent) has been investigated. The As 2 S 3 Gesub(x) compositions are constituted from a disordered packing of structural units whose chemical composition and relative proportion in the glass essentially depends on the germanium content. (author)

  8. BN-C Hybrid Nanoribbons as Gas Sensors

    Science.gov (United States)

    Darvishi Gilan, Mahdi; Chegel, Raad

    2018-02-01

    The effects of carbon monoxide (CO) and ammonia (NH3) molecules adsorption on the various composites of boron nitride and graphene BN-C hybrid nanoribbons are investigated using the non-equilibrium Green's function (NEGF) technique based on density functional theory (DFT). The effects of adsorption with possible random configurations on the average of the density of states (DOS), transmission coefficient, and the current-voltage ( I- V) characteristics are calculated. The results indicate that, by embedding armchair graphene nanoribbon (AGNR) with boron nitride nanoribbon (BNNR), the various electronic properties can be observed after gas molecule adsorption. The electronic structure and gap of hybrids system is modified due to gas adsorption, and the systems act like the n-type semiconductor by NH3 molecule adsorption. The hybrid structures due to their tunable band gap are better candidates for gas detecting compared to the pristine BNNRs and AGNRs.

  9. Beat-wave generation of plasmons in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1995-08-01

    It is shown that in semiconductor plasmas, it is possible to generate large amplitude plasma waves by the beating of two laser beams with frequency difference close to the plasma frequency. For narrow gap seimconductors (for example n-type InSb), the system can simulate the physics underlying beat wave generation in relativistic gaseous plasmas

  10. Bifurcation analysis of a semiconductor laser with filtered optical feedback

    NARCIS (Netherlands)

    Erzgraeber, H.; Krauskopf, B.; Lenstra, D.

    2007-01-01

    We study the dynamics and bifurcations of a semiconductor laser with delayed filtered optical feedback, where a part of the output of the laser reenters after spectral filtering. This type of coherent optical feedback is more challenging than the case of conventional optical feedback from a simple

  11. High Gain Hybrid Graphene-Organic Semiconductor Phototransistors

    NARCIS (Netherlands)

    Huisman, Everardus H.; Shulga, Artem G.; Zomer, Paul J.; Tombros, Nikolaos; Bartesaghi, Davide; Bisri, Satria Zulkarnaen; Loi, Maria A.; Koster, L. Jan Anton; van Wees, Bart J.

    2015-01-01

    Hybrid phototransistors of graphene and the organic semiconductor poly(3-hexylthiophene-2,5-diyl) (P3HT) are presented. Two types of phototransistors are demonstrated with a charge carrier transit time that differs by more than 6 orders of magnitude. High transit time devices are fabricated using a

  12. Measurement of ionising radiation semiconductor detectors: a review

    International Nuclear Information System (INIS)

    Aussel, J.P.

    1986-06-01

    Manufacturing techniques for nuclear detectors using semiconductors are constantly advancing, and a large range of models with different specificities and characteristics are available. After a theoretical reminder, this report describes the main types of detectors, their working and their preferential use. A comparative table guides the neophyte reader in his choice [fr

  13. Theoretical studies on microstructures, stabilities and formation conditions of some sour gas in the type I, II, and H clathrate hydrates

    Science.gov (United States)

    Zhang, Xuran; Qiu, Nianxiang; Huang, Qing; Zha, Xianhu; He, Jian; Li, Yongfeng; Du, Shiyu

    2018-02-01

    Clathrate hydrates are well known for the water cage structures and the capability of encapsulating natural gas, generally considered as sour gas if containing appreciable amount of hydrogen sulfide. Using the ab initio calculations at the wB97X-D/6-311++G(2d,2p) level, we have investigated systematically the microstructures of five standard water cavities (ID, D, T, H and I) with single and multiple hydrogen sulfide inside. The interaction energies and deformation energies are predicted to ensure the stabilities and maximum occupancies of cages. In addition, the Gibbs free energies forming various water cavities enclosing CH4 and H2S molecules at temperature range 253 K-283 K are also calculated to explore the selectivity on hydrate types and corresponding formation conditions. The results from this work may provide new insight into the theory for the replacement scheme in the exploitation of natural gas hydrate.

  14. Semiconductor optoelectronic infrared spectroscopy

    International Nuclear Information System (INIS)

    Hollingworth, A.R.

    2001-08-01

    We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore

  15. Electromagnetic radiation screening of semiconductor devices for long life applications

    Science.gov (United States)

    Hall, T. C.; Brammer, W. G.

    1972-01-01

    A review is presented of the mechanism of interaction of electromagnetic radiation in various spectral ranges, with various semiconductor device defects. Previous work conducted in this area was analyzed as to its pertinence to the current problem. The task was studied of implementing electromagnetic screening methods in the wavelength region determined to be most effective. Both scanning and flooding type stimulation techniques are discussed. While the scanning technique offers a considerably higher yield of useful information, a preliminary investigation utilizing the flooding approach is first recommended because of the ease of implementation, lower cost and ability to provide go-no-go information in semiconductor screening.

  16. Estimation of carrier mobility and charge behaviors of organic semiconductor films in metal-insulator-semiconductor diodes consisting of high-k oxide/organic semiconductor double layers

    Science.gov (United States)

    Chosei, Naoya; Itoh, Eiji

    2018-02-01

    We have comparatively studied the charge behaviors of organic semiconductor films based on charge extraction by linearly increasing voltage in a metal-insulator-semiconductor (MIS) diode structure (MIS-CELIV) and by classical capacitance-voltage measurement. The MIS-CELIV technique allows the selective measurement of electron and hole mobilities of n- and p-type organic films with thicknesses representative of those of actual devices. We used an anodic oxidized sputtered Ta or Hf electrode as a high-k layer, and it effectively blocked holes at the insulator/semiconductor interface. We estimated the hole mobilities of the polythiophene derivatives regioregular poly(3-hexylthiophene) (P3HT) and poly(3,3‧‧‧-didodecylquarterthiophene) (PQT-12) before and after heat treatment in the ITO/high-k/(thin polymer insulator)/semiconductor/MoO3/Ag device structure. The hole mobility of PQT-12 was improved from 1.1 × 10-5 to 2.1 × 10-5 cm2 V-1 s-1 by the heat treatment of the device at 100 °C for 30 min. An almost two orders of magnitude higher mobility was obtained in MIS diodes with P3HT as the p-type layer. We also determined the capacitance from the displacement current in MIS diodes at a relatively low-voltage sweep, and it corresponded well to the classical capacitance-voltage and frequency measurement results.

  17. Dynamics of Coulomb correlations in semiconductors in high magnetic fields

    International Nuclear Information System (INIS)

    Fromer, Neil Alan

    2002-01-01

    Current theories have been successful in explaining many nonlinear optical experiments in undoped semiconductors. However, these theories require a ground state which is assumed to be uncorrelated. Strongly correlated systems of current interest, such as a two dimensional electron gas in a high magnetic field, cannot be explained in this manner because the correlations in the ground state and the low energy collective excitations cause a breakdown of the conventional techniques. We perform ultrafast time-resolved four-wave mixing on $n$-modulation doped quantum wells, which contain a quasi-two dimensional electron gas, in a large magnetic field, when only a single Landau level is excited and also when two levels are excited together. We find evidence for memory effects and as strong coupling between the Landau levels induced by the electron gas. We compare our results with simulations based on a new microscopic approach capable of treating the collective effects and correlations of the doped electrons, and find a good qualitative agreement. By looking at the individual contributions to the model, we determine that the unusual correlation effects seen in the experiments are caused by the scattering of photo-excited electron-hole pairs with the electron gas, leading to new excited states which are not present in undoped semiconductors, and also by exciton-exciton interactions mediated by the long-lived collective excitations of the electron gas, inter-Landau level magnetoplasmons

  18. Thiophene-Based Organic Semiconductors.

    Science.gov (United States)

    Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

    2017-10-24

    Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

  19. Catalysts, Protection Layers, and Semiconductors

    DEFF Research Database (Denmark)

    Chorkendorff, Ib

    2015-01-01

    Hydrogen is the simplest solar fuel to produce and in this presentation we shall give a short overview of the pros and cons of various tandem devices [1]. The large band gap semiconductor needs to be in front, but apart from that we can chose to have either the anode in front or back using either...... acid or alkaline conditions. Since most relevant semiconductors are very prone to corrosion the advantage of using buried junctions and using protection layers offering shall be discussed [2-4]. Next we shall discuss the availability of various catalysts for being coupled to these protections layers...... and how their stability may be evaluated [5, 6]. Examples of half-cell reaction using protection layers for both cathode and anode will be discussed though some of recent examples under both alkaline and acidic conditions. Si is a very good low band gap semiconductor and by using TiO2 as a protection...

  20. High pressure semiconductor physics I

    CERN Document Server

    Willardson, R K; Paul, William; Suski, Tadeusz

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tra...

  1. Selenium semiconductor core optical fibers

    Directory of Open Access Journals (Sweden)

    G. W. Tang

    2015-02-01

    Full Text Available Phosphate glass-clad optical fibers containing selenium (Se semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Such crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.

  2. Hydrogen-related effects in crystalline semiconductors

    International Nuclear Information System (INIS)

    Haller, E.E.

    1988-08-01

    Recent experimental and theoretical information regarding the states of hydrogen in crystalline semiconductors is reviewed. The abundance of results illustrates that hydrogen does not preferentially occupy a few specific lattice sites but that it binds to native defects and impurities, forming a large variety of neutral and electrically active complexes. The study of hydrogen passivated shallow acceptors and donors and of partially passivated multivalent acceptors has yielded information on the electronic and real space structure and on the chemical composition of these complexes. Infrared spectroscopy, ion channeling, hydrogen isotope substitution and electric field drift experiments have shown that both static trigonal complexes as well as centers with tunneling hydrogen exist. Total energy calculations indicate that the charge state of the hydrogen ion which leads to passivation dominates, i.e., H + in p-type and H/sup /minus// in n-type crystals. Recent theoretical calculations indicate that is unlikely for a large fraction of the atomic hydrogen to exist in its neutral state, a result which is consistent with the total absence of any Electron Paramagnetic Resonance (EPR) signal. An alternative explanation for this result is the formation of H 2 . Despite the numerous experimental and theoretical results on hydrogen-related effects in Ge and Si there remains a wealth of interesting physics to be explored, especially in compound and alloy semiconductors. 6 refs., 6 figs

  3. Hydrogen-related effects in crystalline semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, E.E.

    1988-08-01

    Recent experimental and theoretical information regarding the states of hydrogen in crystalline semiconductors is reviewed. The abundance of results illustrates that hydrogen does not preferentially occupy a few specific lattice sites but that it binds to native defects and impurities, forming a large variety of neutral and electrically active complexes. The study of hydrogen passivated shallow acceptors and donors and of partially passivated multivalent acceptors has yielded information on the electronic and real space structure and on the chemical composition of these complexes. Infrared spectroscopy, ion channeling, hydrogen isotope substitution and electric field drift experiments have shown that both static trigonal complexes as well as centers with tunneling hydrogen exist. Total energy calculations indicate that the charge state of the hydrogen ion which leads to passivation dominates, i.e., H/sup +/ in p-type and H/sup /minus// in n-type crystals. Recent theoretical calculations indicate that is unlikely for a large fraction of the atomic hydrogen to exist in its neutral state, a result which is consistent with the total absence of any Electron Paramagnetic Resonance (EPR) signal. An alternative explanation for this result is the formation of H/sub 2/. Despite the numerous experimental and theoretical results on hydrogen-related effects in Ge and Si there remains a wealth of interesting physics to be explored, especially in compound and alloy semiconductors. 6 refs., 6 figs.

  4. HPLC analysis of aldehydes in automobile exhaust gas: Comparison of exhaust odor and irritation in different types of gasoline and diesel engines

    International Nuclear Information System (INIS)

    Roy, Murari Mohon

    2008-01-01

    This study investigated high performance liquid chromatography (HPLC) to identify and measure aldehydes from automobile exhaust gas. Four aldehydes: formaldehyde (HCHO), acetaldehyde (CH 3 CHO), acrolein (H 2 C=CHCHO) and propionaldehyde (CH 3 CH 2 CHO) and one ketone, acetone (CH 3 ) 2 CO are separated. The other higher aldehydes in exhaust gas are very small and cannot be separated. A new method of gas sampling, hereafter called bag sampling in HPLC is introduced instead of the trapping gas sampling method. The superiority of the bag sampling method is its transient gas checking capability. In the second part of this study, HPLC results are applied to compare exhaust odor and irritation of exhaust gases in different types of gasoline and diesel engines. Exhaust odor, irritation and aldehydes are found worst in direct injection (DI) diesel engines and best in some good multi-point injection (MPI) gasoline and direct injection gasoline (DIG) engines. Indirect injection (IDI) diesel engines showed odor, irritation and aldehydes in between the levels of MPI gasoline, DIG and DI diesel engines

  5. Modified vaccinia virus Ankara triggers type I IFN production in murine conventional dendritic cells via a cGAS/STING-mediated cytosolic DNA-sensing pathway.

    Directory of Open Access Journals (Sweden)

    Peihong Dai

    2014-04-01

    Full Text Available Modified vaccinia virus Ankara (MVA is an attenuated poxvirus that has been engineered as a vaccine against infectious agents and cancers. Our goal is to understand how MVA modulates innate immunity in dendritic cells (DCs, which can provide insights to vaccine design. In this study, using murine bone marrow-derived dendritic cells, we assessed type I interferon (IFN gene induction and protein secretion in response to MVA infection. We report that MVA infection elicits the production of type I IFN in murine conventional dendritic cells (cDCs, but not in plasmacytoid dendritic cells (pDCs. Transcription factors IRF3 (IFN regulatory factor 3 and IRF7, and the positive feedback loop mediated by IFNAR1 (IFN alpha/beta receptor 1, are required for the induction. MVA induction of type I IFN is fully dependent on STING (stimulator of IFN genes and the newly discovered cytosolic DNA sensor cGAS (cyclic guanosine monophosphate-adenosine monophosphate synthase. MVA infection of cDCs triggers phosphorylation of TBK1 (Tank-binding kinase 1 and IRF3, which is abolished in the absence of cGAS and STING. Furthermore, intravenous delivery of MVA induces type I IFN in wild-type mice, but not in mice lacking STING or IRF3. Treatment of cDCs with inhibitors of endosomal and lysosomal acidification or the lysosomal enzyme Cathepsin B attenuated MVA-induced type I IFN production, indicating that lysosomal enzymatic processing of virions is important for MVA sensing. Taken together, our results demonstrate a critical role of the cGAS/STING-mediated cytosolic DNA-sensing pathway for type I IFN induction in cDCs by MVA. We present evidence that vaccinia virulence factors E3 and N1 inhibit the activation of IRF3 and the induction of IFNB gene in MVA-infected cDCs.

  6. Quantum confined laser devices optical gain and recombination in semiconductors

    CERN Document Server

    Blood, Peter

    2015-01-01

    The semiconductor laser, invented over 50 years ago, has had an enormous impact on the digital technologies that now dominate so many applications in business, commerce and the home. The laser is used in all types of optical fibre communication networks that enable the operation of the internet, e-mail, voice and skype transmission. Approximately one billion are produced each year for a market valued at around $5 billion. Nearly all semiconductor lasers now use extremely thin layers of light emitting materials (quantum well lasers). Increasingly smaller nanostructures are used in the form of quantum dots. The impact of the semiconductor laser is surprising in the light of the complexity of the physical processes that determine the operation of every device. This text takes the reader from the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots, through descriptions of common device structures to an understanding of their operating characteristics. It has a consistent...

  7. Neutron and gamma irradiation effects on power semiconductor switches

    Science.gov (United States)

    Schwarze, G. E.; Frasca, A. J.

    1990-01-01

    The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

  8. Numerical methods for semiconductor heterostructures with band nonparabolicity

    International Nuclear Information System (INIS)

    Wang Weichung; Hwang Tsungmin; Lin Wenwei; Liu Jinnliang

    2003-01-01

    This article presents numerical methods for computing bound state energies and associated wave functions of three-dimensional semiconductor heterostructures with special interest in the numerical treatment of the effect of band nonparabolicity. A nonuniform finite difference method is presented to approximate a model of a cylindrical-shaped semiconductor quantum dot embedded in another semiconductor matrix. A matrix reduction method is then proposed to dramatically reduce huge eigenvalue systems to relatively very small subsystems. Moreover, the nonparabolic band structure results in a cubic type of nonlinear eigenvalue problems for which a cubic Jacobi-Davidson method with an explicit nonequivalence deflation method are proposed to compute all the desired eigenpairs. Numerical results are given to illustrate the spectrum of energy levels and the corresponding wave functions in rather detail

  9. Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

    Science.gov (United States)

    Pierścińska, D.

    2018-01-01

    This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

  10. Modeling of semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

    We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

  11. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  12. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  13. Semiconductor device physics and simulation

    CERN Document Server

    Yuan, J S

    1998-01-01

    This volume provides thorough coverage of modern semiconductor devices -including hetero- and homo-junction devices-using a two-dimensional simulator (MEDICI) to perform the analysis and generate simulation results Each device is examined in terms of dc, ac, and transient simulator results; relevant device physics; and implications for design and analysis Two hundred forty-four useful figures illustrate the physical mechanisms and characteristics of the devices simulated Comprehensive and carefully organized, Semiconductor Device Physics and Simulation is the ideal bridge from device physics to practical device design

  14. Introduction to semiconductor manufacturing technology

    CERN Document Server

    2012-01-01

    IC chip manufacturing processes, such as photolithography, etch, CVD, PVD, CMP, ion implantation, RTP, inspection, and metrology, are complex methods that draw upon many disciplines. [i]Introduction to Semiconductor Manufacturing Technologies, Second Edition[/i] thoroughly describes the complicated processes with minimal mathematics, chemistry, and physics; it covers advanced concepts while keeping the contents accessible to readers without advanced degrees. Designed as a textbook for college students, this book provides a realistic picture of the semiconductor industry and an in-depth discuss

  15. Organic semiconductors in sensor applications

    CERN Document Server

    Malliaras, George; Owens, Róisín

    2008-01-01

    Organic semiconductors offer unique characteristics such as tunability of electronic properties via chemical synthesis, compatibility with mechanically flexible substrates, low-cost manufacturing, and facile integration with chemical and biological functionalities. These characteristics have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this rapidly emerging field by discussing both optical and electrical sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques to enhance specificity are outlined, and models for the sensor response are described.

  16. Determination of electrical types in the P-doped ZnO thin films by the control of ambient gas flow

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Young Yi; Han, Won Suk [School of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Cho, Hyung Koun, E-mail: chohk@skku.edu [School of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

    2010-05-01

    Phosphorus (P)-doped ZnO thin films with amphoteric doping behavior were grown on c-sapphire substrates by radio frequency magnetron sputtering with various argon/oxygen gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio without post-annealing. The P-doped ZnO films grown at a argon/oxygen ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of 1.5 x 10{sup 17} cm{sup -3} and 2.5 cm{sup 2}/V s, respectively. X-ray diffraction showed that the ZnO (0 0 0 2) peak shifted to lower angle due to the positioning of P{sup 3-} ions with a larger ionic radius in the O{sup 2-} sites. This indicates that a p-type mechanism was due to the substitutional P{sub O}. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction light emitting diode showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

  17. Methods for improved growth of group III nitride semiconductor compounds

    Science.gov (United States)

    Melnik, Yuriy; Chen, Lu; Kojiri, Hidehiro

    2015-03-17

    Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.

  18. Donors in Semiconductors - are they Understood in Electronic Era?

    International Nuclear Information System (INIS)

    Dmochowski, Janusz E

    2007-01-01

    The physics of semiconductors and contemporary electronics cannot be understood without impurities. The hydrogen-like shallow donor (and acceptor) state of electron (hole) bound by Coulomb electrostatic force of excess charge of impurity is used to control conductivity of semiconductors and construct semiconductor diodes, transistors and numerous types of semiconductor electronic and optoelectronic devices, including lasers. Recently, surprisingly, the physics of impurity donors appeared to be much reacher. Experimental evidence has been provided for universal existence of other types of electronic states of the same donor impurity: i) mysterious, deep, DX-type state resulting in metastability - slow hysteresis phenomena - understood as two-electron, acceptor-like state of donor impurity, formed upon large lattice distortion or rearrangement around impurity and accompanying capture of second electron, resulting in negative electron correlation energy U; ii) deep, localized, fully symmetric, A1, one-electron donor state of substitutional impurity. The latter state can be formed from the 'ordinary' shallow hydrogen-like state in the process of strong localization of electron by short range, local potential of impurity core, preserving full (A 1 ) symmetry of the substitutional impurity in the host lattice. The 'anticrossing' of the two A 1 (shallow hydrogenic and deep localized) energy levels upon transformation is observed. All types of electronic states of impurity can be universally observed for the same donor impurity and mutual transformation between different states occur upon changing experimental conditions. The knowledge about existence and properties of these n ew , molecular type, donor states in semiconductors seems still await general recognition and positive application in contemporary material and device science and engineering

  19. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  20. Waveguide based external cavity semiconductor lasers

    NARCIS (Netherlands)

    Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

    2012-01-01

    We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

  1. Fundamentals of semiconductors physics and materials properties

    CERN Document Server

    Yu, Peter Y

    2005-01-01

    Provides detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. This textbook emphasizes understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors and features an extensive collection of tables of material parameters, figures, and problems.

  2. Influence of phonons on semiconductor quantum emission

    Energy Technology Data Exchange (ETDEWEB)

    Feldtmann, Thomas

    2009-07-06

    A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semiconductor systems is presented. The theory is applied to study quantum dots and phonon-assisted luminescence in bulk semiconductors and heterostructures. (orig.)

  3. Effects of Geomechanical Mechanism on the Gas Production Behavior: A Simulation Study of Class-3 Type Four-Way-Closure Ridge Hydrate Deposit Offshore Southwestern Taiwan

    Science.gov (United States)

    Wu, Cheng-Yueh; Chiu, Yung-Cheng; Huang, Yi-Jyun; Hsieh, Bieng-Zih

    2017-04-01

    The future energy police of Taiwan will heavily rely on the clean energy, including renewable energy and low-carbon energy, to meet the target of mitigating CO2 emission. In addition to developing the renewable energies like solar and wind resources, Taiwan will increase the natural gas consumption to obtain enough electrical power with low-carbon emission. The vast resources of gas hydrates recognized in southwestern offshore Taiwan makes a great opportunity for Taiwan to have own energy resources in the future. Therefore, Taiwan put significant efforts on the evaluation of gas hydrate reserves recently. Production behavior of natural gas dissociated from gas hydrate deposits is an important issue to the hydrate reserves evaluation. The depressurization method is a useful engineering recovery method for gas production from a class-3 type hydrate deposit. The dissociation efficiency will be affected by the pressure drawdown disturbance. However, when the pore pressure of hydrate deposits is depressurized for gas production, the rock matrix will surfer more stresses and the formation deformation might be occurred. The purpose of this study was to investigate the effects of geomechanical mechanism on the gas production from a class-3 hydrate deposit using depressurization method. The case of a class-3 type hydrate deposit of Four-Way-Closure Ridge was studied. In this study a reservoir simulator, STARS, was used. STARS is a multiphase flow, heat transfer, geo-chemical and geo-mechanical mechanisms coupling simulator which is capable to simulate the dissociation/reformation of gas hydrate and the deformation of hydrate reservoirs and overburdens. The simulating ability of STARTS simulator was validated by duplicating the hydrate comparison projects of National Energy Technology Lab. The study target, Four-Way-Closure (FWC) Ridge hydrate deposit, was discovered by the bottom simulating reflectors (BSRs). The geological parameters were collected from the geological and

  4. Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

    Directory of Open Access Journals (Sweden)

    S. Tongay

    2012-01-01

    Full Text Available Using current-voltage (I-V, capacitance-voltage (C-V, and electric-field-modulated Raman measurements, we report on the unique physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconductor (graphene and conventional semiconductors. When chemical-vapor-deposited graphene is transferred onto n-type Si, GaAs, 4H-SiC, and GaN semiconductor substrates, there is a strong van-der-Waals attraction that is accompanied by charge transfer across the interface and the formation of a rectifying (Schottky barrier. Thermionic-emission theory in conjunction with the Schottky-Mott model within the context of bond-polarization theory provides a surprisingly good description of the electrical properties. Applications can be made to sensors, where in forward bias there is exponential sensitivity to changes in the Schottky-barrier height due to the presence of absorbates on the graphene, and to analog devices, for which Schottky barriers are integral components. Such applications are promising because of graphene’s mechanical stability, its resistance to diffusion, its robustness at high temperatures, and its demonstrated capability to embrace multiple functionalities.

  5. Pengaruh Pemakaian Bahan Bakar, Putaran, dan Penyetelan Sudut Pengapian terhadap Produk Emisi Gas Buang pada Mesin Type 5K

    Directory of Open Access Journals (Sweden)

    Paryono Paryono

    2009-02-01

    Full Text Available Semakin gencarnya program pemerintah mensosialisasikan program langit biru, diharapkan pemilik kendaraan bermotor mempunyai kepedulian yang tinggi terhadap faktor-faktor penyebab terjadinya pengotoran udara yang ada di lingkungannya. Salah satu faktor penyebab terjadinya pencemaran udara di sekitar kita adalah gas buang yang dihasilkan oleh banyaknya populasi kendaraan bermotor. Tujuan penelitian ini untuk menguji perbedaan pemakaian bahan bakar premium dan bensin biru dalam hal produk emisi gas buang pada kendaraan bermotor pada saat putaran rendah. menengah, dan tinggi pada motor Toyota 5K. Pengambilan data dilakukan dengan mengetes emisi gas buang HC dalam ppm dan Co dalam % volume pada motor yang menggunakan bahan bakar premium dan bensin biru. Hasil pengujian menunjukkan bahwa putaran motor dan penggunaan jenis bahan bakar serta besar penyetelan saat pengapian ada perbedaan yang signifikan dengan F rasio = 144,42 dan P < 0,05 terhadap produk emisi gas buang pada Toyota 5K. Hal ini berarti dengan menggunakan bahan bakar bensin biru akan diperoleh emisi gas buang yang minimum jika penyetelan saat pengapian diperlambat.

  6. Diode having trenches in a semiconductor region

    Energy Technology Data Exchange (ETDEWEB)

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  7. Anomalous lattice parameter of magnetic semiconductor alloys

    OpenAIRE

    CAETANO, Clovis; MARQUES, Marcelo; FERREIRA, Luiz G.; TELES, Lara K.

    2009-01-01

    The addition of transition metals (TM) to III-V semiconductors radically changes their electronic, magnetic and structural properties. In contrast to the conventional semiconductor alloys, the lattice parameter in magnetic semiconductor alloys, including the ones with diluted concentration (the diluted magnetic semiconductors - DMS), cannot be determined uniquely from the composition. By using first-principles calculations, we find a direct correlation between the magnetic moment and the anio...

  8. Application of copper-carbon fiber composites to power semiconductor devices

    Science.gov (United States)

    Kuniya, Keiichi; Arakawa, Hideo; Sakaue, Tadashi; Minorikawa, Hitoshi; Akeyama, Kenji; Sakamoto, Tatsuji

    1988-01-01

    Copper-carbon composite electrodes are used in a series of power semiconductor devices, i.e., resin molded diodes, button-type diodes, stud-type diodes, power modules, and integrated circuit igniter modules. The properties of these power semiconductor devices compare favorably with those conventional devices using Mo or W electrodes. In thermal fatigue tests, no degradation in the electrical and mechanical characteristics of these devices are observed. The new composite electrode with carbon fibers satisfies all of the major requirements for the electrodes in power semiconductor devices.

  9. Sampling and Analysis of the Headspace Gas in 3013 Type Plutonium Storage Containers at Los Alamos National Laboratory

    International Nuclear Information System (INIS)

    Jackson, Jay M.; Berg, John M.; Hill, Dallas D.; Worl, Laura A.; Veirs, Douglas K.

    2012-01-01

    Department of Energy (DOE) sites have packaged approximately 5200 3013 containers to date. One of the requirements specified in DOESTD-3013, which specifies requirements for packaging plutonium bearing materials, is that the material be no greater than 0.5 weight percent moisture. The containers are robust, nested, welded vessels. A shelf life surveillance program was established to monitor these cans over their 50 year design life. In the event pressurization is detected by radiography, it will be necessary to obtain a head space gas sample from the pressurized container. This technique is also useful to study the head space gas in cans selected for random destructive evaluation. The atmosphere is sampled and the hydrogen to oxygen ratio is measured to determine the effects of radiolysis on the moisture in the container. A system capable of penetrating all layers of a 3013 container assembly and obtaining a viable sample of the enclosed gas and an estimate of internal pressure was designed.

  10. Semiconductor technology program: Progress briefs

    Science.gov (United States)

    Galloway, K. F.; Scace, R. I.; Walters, E. J.

    1981-01-01

    Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.

  11. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

    2000-01-01

    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...

  12. Ultrafast Spectroscopy of Semiconductor Devices

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Hvam, Jørn Marcher

    1999-01-01

    In this work we present an experimental technique for investigating ultrafast carrier dynamics in semiconductor optical amplifiers at room temperature. These dynamics, influenced by carrier heating, spectral hole-burning and two-photon absorption, are very important for device applications in inf...

  13. Semiconductor radiation detectors: device physics

    National Research Council Canada - National Science Library

    Lutz, Gerhard

    1999-01-01

    ..., including nuclear physics, elementary particle physics, optical and x-ray astronomy, medicine, and materials testing - and the number of applications is growing continually. Closely related, and initiated by the application of semiconductors, is the development of low-noise low-power integrated electronics for signal readout. The success of semicond...

  14. Review of semiconductor drift detectors

    Science.gov (United States)

    Gatti, Emilio; Rehak, Pavel

    2005-04-01

    A short review of semiconductor drift detectors is given. The emphasis is given to detectors intended for tracking of fast charged particles for experiments in particle physics and high energy heavy-ion physics. The use and performance of this kind of detector in past, present and future experiments is described together with the experience learned during the design, production and data taking phases.

  15. Atomistic Models of Amorphous Semiconductors

    NARCIS (Netherlands)

    Jarolimek, K.

    2011-01-01

    Crystalline silicon is probably the best studied material, widely used by the semiconductor industry. The subject of this thesis is an intriguing form of this element namely amorphous silicon. It can contain a varying amount of hydrogen and is denoted as a-Si:H. It completely lacks the neat long

  16. 2010 Defects in Semiconductors GRC

    Energy Technology Data Exchange (ETDEWEB)

    Shengbai Zhang

    2011-01-06

    Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, as well as an emphasis on the development of novel defect detection methods and first-principles defect theories. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference will deal with point and extended defects in a broad range of electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, oxides, sp{sup 2} carbon based-materials, and photovoltaic/solar cell materials, and in understanding important defect phenomena such as doping bottleneck in nanostructures and the diffusion of defects and impurities. The program consists of about twenty invited talks and a number of contributed poster sessions. The emphasis should be on work which has yet to be published. The large amount of discussion time provides an ideal forum for dealing with topics that are new and/or controversial.

  17. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

    2000-01-01

    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

  18. A Brief History of ... Semiconductors

    Science.gov (United States)

    Jenkins, Tudor

    2005-01-01

    The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival…

  19. Calculation of the thermal mode in semiconductor devices in conditions of their operation in semiconductor apparatuses

    OpenAIRE

    Сосков, Анатолій Георгійович; Глєбова, Марина Леонідівна; Сабалаєва, Наталія Олегівна; Форкун, Яна Борисівна

    2014-01-01

    The study of the temperature field of power semiconductor devices, operating in semiconductor apparatuses, either non-contact or hybrid was carried out in the paper.It was also shown that the main mode of the current load of power semiconductor devices, operating in semiconductor apparatuses is a pulse mode.Analytical method for calculating the values of the temperature rise in the structure of power semiconductor devices when subjected to a current pulse of arbitrary shape based on a model t...

  20. SEM microcharacterization of semiconductors

    CERN Document Server

    Holt, D B

    1989-01-01

    Applications of SEM techniques of microcharacterization have proliferated to cover every type of material and virtually every branch of science and technology. This book emphasizes the fundamental physical principles. The first section deals with the foundation of microcharacterization in electron beam instruments and the second deals with the interpretation of the information obtained in the main operating modes of a scanning electron microscope.

  1. Ultrafast nonlinear carrier dynamics in doped semiconductors in high THz fields

    DEFF Research Database (Denmark)

    Hoffmann, Matthias C.; Turchinovich, Dmitry

    2011-01-01

    THz frequency saturable absorption and intervalley carrier scattering in n-type semiconductors were observed using intensity-dependent transmission experiments as well as THz-pump—THz probe spectroscopy with ultrabroadband probe pulses.......THz frequency saturable absorption and intervalley carrier scattering in n-type semiconductors were observed using intensity-dependent transmission experiments as well as THz-pump—THz probe spectroscopy with ultrabroadband probe pulses....

  2. Controlled growth of semiconductor crystals

    Science.gov (United States)

    Bourret-Courchesne, Edith D.

    1992-01-01

    A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

  3. Organic semiconductor heterojunctions and its application in organic light-emitting diodes

    CERN Document Server

    Ma, Dongge

    2017-01-01

    This book systematically introduces the most important aspects of organic semiconductor heterojunctions, including the basic concepts and electrical properties. It comprehensively discusses the application of organic semiconductor heterojunctions as charge injectors and charge generation layers in organic light-emitting diodes (OLEDs). Semiconductor heterojunctions are the basis for constructing high-performance optoelectronic devices. In recent decades, organic semiconductors have been increasingly used to fabricate heterojunction devices, especially in OLEDs, and the subject has attracted a great deal of attention and evoked many new phenomena and interpretations in the field. This important application is based on the low dielectric constant of organic semiconductors and the weak non-covalent electronic interactions between them, which means that they easily form accumulation heterojunctions. As we know, the accumulation-type space charge region is highly conductive, which is an important property for high...

  4. Photo-electret effects in homogenous semiconductors

    International Nuclear Information System (INIS)

    Nabiev, G.A.

    2004-01-01

    In the given work is shown the opportunity and created the theory of photo-electret condition in semiconductors with Dember mechanism of photo-voltage generation. Photo-electret of such type can be created, instead of traditional and without an external field as a result of only one illumination. Polar factor, in this case, is the distinction of electrons and holes mobility. Considered the multilayered structure with homogeneous photoactive micro areas shared by the layers, which are interfering to alignment of carriers concentration. We consider, that the homogeneous photoactive areas contain deep levels of stick. Because of addition of elementary photo voltage in separate micro photo cells it is formed the abnormal-large photo voltage (APV-effect). Let's notice, that Dember photo-voltage in a separate micro photo-cell ≤kT/q. From the received expressions, in practically important, special case, when quasi- balance between valent zone and stick levels established in much more smaller time, than free hole lifetime, and we received, that photo-voltage is relaxing. Comparing of the received expressions with the laws of photo voltage attenuation in p-n- junction structures shows their identity; the difference is only in absolute meanings of photo voltage. During the illumination in the semiconductor are created the superfluous concentration of charge carriers and part from them stays at deep levels. At de-energizing light there is a gradual generation of carriers located at these levels

  5. Semiconductor nanostructures for plasma energetic systems

    Science.gov (United States)

    Mustafaev, Alexander; Smerdov, Rostislav; Klimenkov, Boris

    2017-10-01

    In this talk we discuss the research results of the three types of ultrasmall electrodes namely the nanoelectrode arrays based on composite nanostructured porous silicon (PS) layers, porous GaP and nanocrystals of ZnO. These semiconductor materials are of great interest to nano- and optoelectronic applications by virtue of their high specific surface area and extensive capability for surface functionalization. The use of semiconductor (GaN) cathodes in photon-enhanced thermionic emission systems has also proved to be effective although only a few (less than 1%) of the incident photons exceed the 3.3 eV GaN band gap. This significant drawback provided us with a solid foundation for our research in the field of nanostructured PS, and composite materials based on it exhibiting nearly optimal parameters in terms of the band gap (1.1 eV). The band gap modification for PS nanostructured layers is possible in the range of less than 1 eV and 3 eV due to the existence of quantum confinement effect and the remarkable possibilities of PS surface alteration thus providing us with a suitable material for both cathode and anode fabrication. The obtained results are applicable for solar concentration and thermionic energy conversion systems. Dr. Sci., Ph.D, Principal Scientist, Professor.

  6. Semiconductor Laser Multi-Spectral Sensing and Imaging

    Directory of Open Access Journals (Sweden)

    Han Q. Le

    2010-01-01

    Full Text Available Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO. These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

  7. Submillimeter Spectroscopic Study of Semiconductor Processing Plasmas

    Science.gov (United States)

    Helal, Yaser H.

    Plasmas used for manufacturing processes of semiconductor devices are complex and challenging to characterize. The development and improvement of plasma processes and models rely on feedback from experimental measurements. Current diagnostic methods are not capable of measuring absolute densities of plasma species with high resolution without altering the plasma, or without input from other measurements. At pressures below 100 mTorr, spectroscopic measurements of rotational transitions in the submillimeter/terahertz (SMM) spectral region are narrow enough in relation to the sparsity of spectral lines that absolute specificity of measurement is possible. The frequency resolution of SMM sources is such that spectral absorption features can be fully resolved. Processing plasmas are a similar pressure and temperature to the environment used to study astrophysical species in the SMM spectral region. Many of the molecular neutrals, radicals, and ions present in processing plasmas have been studied in the laboratory and their absorption spectra have been cataloged or are in the literature for the purpose of astrophysical study. Recent developments in SMM devices have made its technology commercially available for applications outside of specialized laboratories. The methods developed over several decades in the SMM spectral region for these laboratory studies are directly applicable for diagnostic measurements in the semiconductor manufacturing industry. In this work, a continuous wave, intensity calibrated SMM absorption spectrometer was developed as a remote sensor of gas and plasma species. A major advantage of intensity calibrated rotational absorption spectroscopy is its ability to determine absolute concentrations and temperatures of plasma species from first principles without altering the plasma environment. An important part of this work was the design of the optical components which couple 500 - 750 GHz radiation through a commercial inductively coupled plasma

  8. Thermoelectric properties of n-type 95%Bi2Te3–5%Bi2Se3 compounds fabricated by gas-atomization and spark plasma sintering

    International Nuclear Information System (INIS)

    Kim, Hyo-Seob; Hong, Soon-Jik

    2014-01-01

    Highlights: • Gas Atomization process was used to fabricate 95%Bi 2 Te 3 –5%Bi 2 Se 3 powders. • Characterization of gas atomized powders were conducted. • SPS process was used to sinter the atomized powders at different sintering temp. • Thermoelectric properties, density and hardness of SPS-ed bulks were analyzed. -- Abstract: In this study, n-type 95%Bi 2 Te 3 –5%Bi 2 Se 3 doped with 0.04% SbI 3 thermoelectric materials was fabricated by gas-atomization and spark plasma sintering (SPS) at a temperature range of 623–723 K. The microstructure of the gas atomized powder shows spherical shape, fine particle size and homogeneously distributed grains. The density of the sintered bulk reached nearly 100% of the theoretical density, where micro Vickers Hardness was found around 54–57 Hv. The Seebeck coefficient (α) of the sintered bulk decreased while electrical resistivity and thermal conductivity (κ) increased with increasing sintering temperature to 723 K, resulting in a decrease in figure of merit. The maximum figure of merit (ZT) was 0.76, which was obtained in the sintered bulk at 623 K

  9. Current trends in research on gas sensors

    International Nuclear Information System (INIS)

    Mohd Mustamam A, Karim; John Ojur Dennis; Md Rahim Sahar; Mohd Khairi Saidin

    1998-01-01

    This paper reviews the current trends in researches on gas sensors by considering the techniques and methods for improvement of the performance of semiconductor gas sensors and reporting the newly emerging researches on the detection of gases at the part per million (ppb) levels and photoconduction (author)

  10. Absolute instability of polaron mode in semiconductor magnetoplasma

    Science.gov (United States)

    Paliwal, Ayushi; Dubey, Swati; Ghosh, S.

    2018-01-01

    Using coupled mode theory under hydrodynamic regime, a compact dispersion relation is derived for polaron mode in semiconductor magnetoplasma. The propagation and amplification characteristics of the wave are explored in detail. The analysis deals with the behaviour of anomalous threshold and amplification derived from dispersion relation, as function of external parameters like doping concentration and applied magnetic field. The results of this investigation are hoped to be useful in understanding electron-longitudinal optical phonon interplay in polar n-type semiconductor plasmas under the influence of coupled collective cyclotron excitations. The best results in terms of smaller threshold and higher gain of polaron mode could be achieved by choosing moderate doping concentration in the medium at higher magnetic field. For numerical appreciation of the results, relevant data of III-V n-GaAs compound semiconductor at 77 K is used. Present study provides a qualitative picture of polaron mode in magnetized n-type polar semiconductor medium duly shined by a CO2 laser.

  11. Interfacing 2D Semiconductors with Functional Oxides: Fundamentals, Properties, and Applications

    Directory of Open Access Journals (Sweden)

    Zhiquan Yuan

    2017-08-01

    Full Text Available Two-dimensional semiconductors, such as transition-metal dichalcogenides (TMDs and black phosphorous (BP, have found various potential applications in electronic and opto-electronic devices. However, several problems including low carrier mobility and low photoluminescence efficiencies still limit the performance of these devices. Interfacing 2D semiconductors with functional oxides provides a way to address the problems by overcoming the intrinsic limitations of 2D semiconductors and offering them multiple functionalities with various mechanisms. In this review, we first focus on the physical effects of various types of functional oxides on 2D semiconductors, mostly on MoS2 and BP as they are the intensively studied 2D semiconductors. Insulating, semiconducting, conventional piezoelectric, strongly correlated, and magnetic oxides are discussed. Then we introduce the applications of these 2D semiconductors/functional oxides systems in field-effect devices, nonvolatile memory, and photosensing. Finally, we discuss the perspectives and challenges within this research field. Our review provides a comprehensive understanding of 2D semiconductors/functional oxide heterostructures, and could inspire novel ideas in interface engineering to improve the performance of 2D semiconductor devices.

  12. Modulation spectroscopy characterization of MOCVD semiconductors and semiconductors structures

    Science.gov (United States)

    Pollak, Fred H.; Shen, H.

    1989-11-01

    This paper reviews recent developments in the use of contactless modulation spectroscopy to yield important information about MOCVD growth as well as the properties of MOCVD fabricated semiconductors and semiconductor microstructures. The method of reflectance difference spectroscopy can be used to gain significant insights into chemical and structural parameters during actual growth conditions. The electromodulation technique of photoreflectance (PR) probes the electronic states of the material. It has many applications for in-situ post-growth characterization of crystal quality, very thin Ga 1-xAl xAs/GaAs epitaxial layers, Ga 1-xAl xAs alloy composition, deep trap states, surface electric fields and carrier concentrations, lattice-mismatch strain, etc, as well as the determination of relevant parameters of heterojunction structures. In addition, recent PR experiments at 600°C on GaAs and Ga 0.82Al 0.18As show potential for in-situ monitoring during growth.

  13. CO2 gas sensors based on rare earth oxycarbonates

    International Nuclear Information System (INIS)

    Haensch, Alexander

    2016-01-01

    This title presents a new type of CO 2 gas sensor, that allows the measurement of CO 2 gas with very low effort. The measurement principle is based on two semiconducting materials. One the ''receptor'' and a ''transducer'' form a semiconductor junction. Electronic changes in the receptor change the electrical resistance in the transducer and therefor allow the easy electrical measurement. The reactivity and the reaction mechanism is thoroughly studied. In the first part the basics and resistance measurements are presented. A comparison between different mixtures is done. The main part studies the surface chemistry with operando DRIFT spectroscopy. The chemical reactivity of different target gases and background gases is studied thoroughly. The electronic properties of Oxycarbonates and the combination of oxycarbonate and tin oxide were studied using operando Kelvin probes measurements. The result is that CO 2 alters the electron affinity of the material. Once moisture is present, an additional band bending is visible. The band bending dominated in a humid atmosphere, the work function changes. The electronic connection of oxycarbonate and tin oxide, the work function change of Oxycarbonates can be transferred to the tin oxide. Using the collected data, a basic idea of the operation will be presented by a two-semiconductor materials gas sensor.

  14. Electronic structure of defects in semiconductor heterojunctions

    International Nuclear Information System (INIS)

    Haussy, Bernard; Ganghoffer, Jean Francois

    2002-01-01

    Full text.heterojunctions and semiconductors and superlattices are well known and well used by people interested in optoelectronics communications. Components based on the use of heterojunctions are interesting for confinement of light and increase of quantum efficiency. An heterojunction is the contact zone between two different semiconductors, for example GaAs and Ga 1-x Al x As. Superlattices are a succession of heterojunctions (up to 10 or 20). These systems have been the subjects of many experiments ao analyse the contact between semiconductors. They also have been theoretically studied by different types of approach. The main result of those studies is the prediciton of band discontinuities. Defects in heterojunctions are real traps for charge carriers; they can affect the efficiency of the component decreasing the currents and the fluxes in it. the knowledge of their electronic structure is important, a great density of defects deeply modifies the electronic structure of the whole material creating real new bands of energy in the band structure of the component. in the first part of this work, we will describe the heterostructure and the defect in terms of quantum wells and discrete levels. This approach allows us to show the role of the width of the quantum well describing the structure but induces specific behaviours due to the one dimensional modelling. Then a perturbative treatment is proposed using the Green's functions formalism. We build atomic chains with different types of atoms featuring the heterostructure and the defect. Densities of states of a structure with a defect and levels associated to the defect are obtained. Results are comparable with the free electrons work, but the modelling do not induce problems due to a one dimensional approach. To extend our modelling, a three dimensions approach, based on a cavity model, is investigated. The influence of the defect, - of hydrogenoid type - introduced in the structure, is described by a cavity

  15. Chemical Analysis of a "Miller-Type" Complex Prebiotic Broth. Part II: Gas, Oil, Water and the Oil/Water-Interface

    Science.gov (United States)

    Scherer, Sabrina; Wollrab, Eva; Codutti, Luca; Carlomagno, Teresa; da Costa, Stefan Gomes; Volkmer, Andreas; Bronja, Amela; Schmitz, Oliver J.; Ott, Albrecht

    2017-12-01

    We have analyzed the chemical variety obtained by Miller-Urey-type experiments using nuclear magnetic resonance (NMR) spectroscopy and coherent anti-Stokes Raman scattering (CARS) spectroscopy, gas chromatography followed by mass spectrometry (GC/MS) and two-dimensional gas chromatography followed by mass spectrometry (GCxGC/MS). In the course of a running Miller-Urey-type experiment, a hydrophobic organic layer emerged besides the hydrophilic aqueous phase and the gaseous phase that were initially present. The gas phase mainly consisted of aromatic compounds and molecules containing C≡ C or C≡ N triple bonds. The hydrophilic phase contained at least a few thousands of different molecules, primarily distributed in a range of 50 and 500 Da. The hydrophobic phase is characterized by carbon-rich, oil-like compounds and their amphiphilic derivatives containing oxygen with tensioactive properties. The presence of a wide range of oxidized molecules hints to the availability of oxygen radicals. We suggest that they intervene in the formation of alkylated polyethylene glycol (PEG) in the oil/water interface. CARS spectroscopy revealed distinct vibrational molecular signatures. In particular, characteristic spectral bands for cyanide compounds were observed if the broth was prepared with electric discharges in the gaseous phase. The characteristic spectral bands were absent if discharges were released onto the water surface. NMR spectroscopy on the same set of samples independently confirmed the observation. In addition, NMR spectroscopy revealed overall high chemical variability that suggests strong non-linearities due to interdependent, sequential reaction steps.

  16. Possible continuous-type (unconventional) gas accumulation in the Lower Silurian "Clinton" sands, Medina Group and Tuscarora Sandstone in the Appalachian Basin; a progress report of the 1995 project activities

    Science.gov (United States)

    Ryder, Robert T.; Aggen, Kerry L.; Hettinger, Robert D.; Law, Ben E.; Miller, John J.; Nuccio, Vito F.; Perry, William J.; Prensky, Stephen E.; Filipo, John J.; Wandrey, Craig J.

    1996-01-01

    INTRODUCTION: In the U.S. Geological Survey's (USGS) 1995 National Assessment of United States oil and gas resources (Gautier and others, 1995), the Appalachian basin was estimated to have, at a mean value, about 61 trillion cubic feet (TCF) of recoverable gas in sandstone and shale reservoirs of Paleozoic age. Approximately one-half of this gas resource is estimated to reside in a regionally extensive, continuous-type gas accumulation whose reservoirs consist of low-permeability sandstone of the Lower Silurian 'Clinton' sands and Medina Group (Gautier and others, 1995; Ryder, 1995). Recognizing the importance of this large regional gas accumulation for future energy considerations, the USGS initiated in January 1995 a multi-year study to evaluate the nature, distribution, and origin of natural gas in the 'Clinton' sands, Medina Group sandstones, and equivalent Tuscarora Sandstone. The project is part of a larger natural gas project, Continuous Gas Accumulations in Sandstones and Carbonates, coordinated in FY1995 by Ben E. Law and Jennie L. Ridgley, USGS, Denver. Approximately 2.6 man years were devoted to the Clinton/Medina project in FY1995. A continuous-type gas accumulation, referred to in the project, is a new term introduced by Schmoker (1995a) to identify those natural gas accumulations whose reservoirs are charged throughout with gas over a large area and whose entrapment does not involve a downdip gas-water contact. Gas in these accumulations is located downdip of the water column and, thus, is the reverse of conventional-type hydrocarbon accumulations. Commonly used industry terms that are more or less synonymous with continuous-type gas accumulations include basin- centered gas accumulation (Rose and others, 1984; Law and Spencer, 1993), tight (low-permeability) gas reservoir (Spencer, 1989; Law and others, 1989; Perry, 1994), and deep basin gas (Masters, 1979, 1984). The realization that undiscovered gas in Lower Silurian sandstone reservoirs of the

  17. Research on the internal pressure behavior of metal gas distribution pipelines with different types of tubing defects

    Directory of Open Access Journals (Sweden)

    Filip Stefan Mihai

    2017-01-01

    Full Text Available The paper aims to approach an important subject related to natural gas distribution networks which, depending on the expansion of the localities, are composed of intercommunicating pipes, pressure reducing stations and branch connections fittings. The urban networks are the most complex ones and the rural areas networks are the simplest. However, irrespective of their installation, they must meet the safety operating requirements as much as possible. According to standards, all these components must be tight and pressure resistant. In this regard, we intend to approach a very important issue related to the behavior of the tubular steel material showing corrosion and/or material defects, and to the internal stress caused by the gas pressure on the walls of the tubing material.

  18. Forecasting cracked collectors on anticlinal type structures at late stage of exploration in oil and gas area

    Science.gov (United States)

    Hasanov, M. A.; Aleksandrov, B. L.; Eljayev, A. S.; Ezirbaev, T. B.; Gatsaeva, S. S.

    2017-10-01

    The possibility of using complex information on morphological parameters of structures, block porosity and the reservoir pressure gradient over previously explored deposits for the development of a multidimensional equation for estimating secondary porosity is considered. This is examined by the example of reservoirs with secondary (fractured) porosity of the Upper Cretaceous carbonate deposits of the Tersko-Sunzhenskaya oil and gas bearing region of the Ciscaucasia. The use of this equation makes it possible to predict the magnitude of the secondary porosity on the anticlinal structures, which are newly discovered by seismic methods at a later stage of exploration in the relevant oil and gas region, as a quantitative criterion that predicts the presence of a trap.

  19. Gas and Gas Pains

    Science.gov (United States)

    ... to produce gas. Often, relatively simple changes in eating habits can lessen bothersome gas. Certain digestive system disorders, ... such as soda and beer, increase stomach gas. Eating habits, such as eating too quickly, drinking through a ...

  20. Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes

    Science.gov (United States)

    Galeti, H. V. A.; Galvão Gobato, Y.; Brasil, M. J. S. P.; Taylor, D.; Henini, M.

    2018-03-01

    We have investigated the spin properties of a two-dimensional hole gas (2DHG) formed at the contact layer of a p-type GaAs/AlAs resonant tunneling diode (RTD). We have measured the polarized-resolved photoluminescence of the RTD as a function of bias voltage, laser intensity and external magnetic field up to 15T. By tuning the voltage and the laser intensity, we are able to change the spin-splitting from the 2DHG from almost 0 meV to 5 meV and its polarization degree from - 40% to + 50% at 15T. These results are attributed to changes of the local electric field applied to the two-dimensional gas which affects the valence band and the hole Rashba spin-orbit effect.