WorldWideScience

Sample records for tunnel barrier silicon

  1. Low-resistance spin injection into silicon using graphene tunnel barriers.

    Science.gov (United States)

    van 't Erve, O M J; Friedman, A L; Cobas, E; Li, C H; Robinson, J T; Jonker, B T

    2012-11-01

    Spin manipulation in a semiconductor offers a new paradigm for device operation beyond Moore's law. Ferromagnetic metals are ideal contacts for spin injection and detection, but the intervening tunnel barrier required to accommodate the large difference in conductivity introduces defects, trapped charge and material interdiffusion, which severely compromise performance. Here, we show that single-layer graphene successfully circumvents the classic issue of conductivity mismatch between a metal and a semiconductor for electrical spin injection and detection, providing a highly uniform, chemically inert and thermally robust tunnel barrier. We demonstrate electrical generation and detection of spin accumulation in silicon above room temperature, and show that the contact resistance-area products are two to three orders of magnitude lower than those achieved with oxide tunnel barriers on silicon substrates with identical doping levels. Our results identify a new route to low resistance-area product spin-polarized contacts, a key requirement for semiconductor spintronic devices that rely on two-terminal magnetoresistance, including spin-based transistors, logic and memory.

  2. Spin transport and Hanle effect in silicon nanowires using graphene tunnel barriers

    Science.gov (United States)

    van't Erve, O. M. J.; Friedman, A. L.; Li, C. H.; Robinson, J. T.; Connell, J.; Lauhon, L. J.; Jonker, B. T.

    2015-06-01

    Spin-based devices offer non-volatile, scalable, low power and reprogrammable functionality for emerging device technologies. Here we fabricate nanoscale spintronic devices with ferromagnetic metal/single-layer graphene tunnel barriers used to generate spin accumulation and spin currents in a silicon nanowire transport channel. We report the first observation of spin precession via the Hanle effect in both local three-terminal and non-local spin-valve geometries, providing a direct measure of spin lifetimes and confirmation of spin accumulation and pure spin transport. The use of graphene as the tunnel barrier provides a low-resistance area product contact and clean magnetic switching characteristics, because it smoothly bridges the nanowire and minimizes complicated magnetic domains that otherwise compromise the magnetic behaviour. Utilizing intrinsic two-dimensional layers such as graphene or hexagonal boron nitride as tunnel contacts on nanowires offers many advantages over conventional materials deposited by vapour deposition, enabling a path to highly scaled electronic and spintronic devices.

  3. An epitaxial ferroelectric tunnel junction on silicon.

    Science.gov (United States)

    Li, Zhipeng; Guo, Xiao; Lu, Hui-Bin; Zhang, Zaoli; Song, Dongsheng; Cheng, Shaobo; Bosman, Michel; Zhu, Jing; Dong, Zhili; Zhu, Weiguang

    2014-11-12

    Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Resonance-like tunneling across a barrier with adjacent wells

    Indian Academy of Sciences (India)

    devices using n-type oxygen-doped gallium arsenide and silicon dioxide. It is envisaged that these results will have applications in the design of tunneling devices. Keywords. Potential barrier with wells; tunneling; resonance. PACS Nos 03.65.-w; 03.65.Xp. 1. Introduction. The mechanism of quantum tunneling (T) across ...

  5. Tunnel barrier schottky

    Energy Technology Data Exchange (ETDEWEB)

    Chu, Rongming; Cao, Yu; Li, Zijian; Williams, Adam J.

    2018-02-20

    A diode includes: a semiconductor substrate; a cathode metal layer contacting a bottom of the substrate; a semiconductor drift layer on the substrate; a graded aluminum gallium nitride (AlGaN) semiconductor barrier layer on the drift layer and having a larger bandgap than the drift layer, the barrier layer having a top surface and a bottom surface between the drift layer and the top surface, the barrier layer having an increasing aluminum composition from the bottom surface to the top surface; and an anode metal layer directly contacting the top surface of the barrier layer.

  6. Silicon spintronics with ferromagnetic tunnel devices

    International Nuclear Information System (INIS)

    Jansen, R; Sharma, S; Dash, S P; Min, B C

    2012-01-01

    In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

  7. Reliability of modified tunneling barriers for high performance nonvolatile charge trap flash memory application

    Science.gov (United States)

    Park, Goon-Ho; Cho, Won-Ju

    2010-01-01

    Charge trap flash memory devices with modified tunneling barriers were fabricated using the tunneling barrier engineering technique. Variable oxide thickness (VARIOT) barrier and CRESTED barrier consisting of thin SiO2 and Si3N4 dielectric layers were used as engineered tunneling barriers. High-k dielectrics were used as charge trapping and blocking oxide layer to improve the program/erase speed. The VARIOT type tunneling barrier composed of oxide-nitride-oxide layers revealed reliable electrical characteristics; long retention time and superior endurance. On the other hand, the CRESTED tunneling barrier composed of nitride-oxide-nitride (NON) layers showed degraded retention and endurance characteristics. It is found that the degradation of NON barrier is associated with the increase in interface state density at tunneling barrier/silicon channel by programming and erasing (P/E) stress.

  8. Reduced resistance drift in tunnel junctions using confined tunnel barriers

    Science.gov (United States)

    Barcikowski, Z. S.; Pomeroy, J. M.

    2017-11-01

    Metal-insulator-metal (MIM) tunnel junctions with the aluminum oxide tunnel barriers confined between cobalt electrodes exhibit less resistance drift over time than junctions that utilize a thick, unconfined aluminum electrode. The improved long time stability is attributed to better initial oxide quality achieved through confinement (use of a potential energy well for the oxygen) and plasma oxidation. In this work, Co/AlOx/Co and Co/Al/AlOx/Co tunnel junction aging is compared over a period of approximately 9 months using transport measurements and Wentzel-Kramers-Brillouin (WKB) based modelling. The Co/AlOx/Co (confined) tunnel junction resistance increased by (32 ± 6) % over 5400 h, while Co/Al/AlOx/Co (unconfined) tunnel junction resistance increased by (85 ± 23) % over 5200 h. Fit parameters for the tunnel barrier width and potential energy barriers were extracted using WKB transport modelling. These values change only a small amount in the confined Co/AlOx/Co tunnel junction but show a significant drift in the unconfined Co/AlOx/Co tunnel junction.

  9. Homoepitaxial graphene tunnel barriers for spin transport

    Directory of Open Access Journals (Sweden)

    Adam L. Friedman

    2016-05-01

    Full Text Available Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

  10. Phonon tunneling through a double barrier system

    Energy Technology Data Exchange (ETDEWEB)

    Villegas, Diosdado [Departamento de Física, Universidad Central “Marta Abreu” de Las Villas, CP 54830, Santa Clara, Villa Clara (Cuba); Instituto de Física, Universidad Autónoma de Puebla, 18 Sur y San Claudio, Edif. 110A, Ciudad Universitaria, 72570 Puebla (Mexico); León-Pérez, Fernando de [Centro Universitario de la Defensa de Zaragoza, Ctra. de Huesca s/n, E-50090 Zaragoza (Spain); Pérez-Álvarez, R. [Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca (Mexico); Arriaga, J., E-mail: arriaga@ifuap.buap.mx [Instituto de Física, Universidad Autónoma de Puebla, 18 Sur y San Claudio, Edif. 110A, Ciudad Universitaria, 72570 Puebla (Mexico)

    2015-04-15

    The tunneling of optical and acoustic phonons at normal incidence on a double-barrier is studied in this paper. Transmission coefficients and resonance conditions are derived theoretically under the assumption that the long-wavelength approximation is valid. It is shown that the behavior of the transmission coefficients for the symmetric double barrier has a Lorentzian form close to resonant frequencies and that Breit–Wigner's formula have a general validity in one-dimensional phonon tunneling. Authors also study the so-called generalized Hartman effect in the tunneling of long-wavelength phonons and show that this effect is a numerical artifact resulting from taking the opaque limit before exploring the variation with a finite barrier width. This study could be useful for the design of acoustic devices.

  11. Phonon tunneling through a double barrier system

    International Nuclear Information System (INIS)

    Villegas, Diosdado; León-Pérez, Fernando de; Pérez-Álvarez, R.; Arriaga, J.

    2015-01-01

    The tunneling of optical and acoustic phonons at normal incidence on a double-barrier is studied in this paper. Transmission coefficients and resonance conditions are derived theoretically under the assumption that the long-wavelength approximation is valid. It is shown that the behavior of the transmission coefficients for the symmetric double barrier has a Lorentzian form close to resonant frequencies and that Breit–Wigner's formula have a general validity in one-dimensional phonon tunneling. Authors also study the so-called generalized Hartman effect in the tunneling of long-wavelength phonons and show that this effect is a numerical artifact resulting from taking the opaque limit before exploring the variation with a finite barrier width. This study could be useful for the design of acoustic devices

  12. Resonant tunneling via spin-polarized barrier states in a magnetic tunnel junction

    NARCIS (Netherlands)

    Jansen, R.; Lodder, J.C.

    2000-01-01

    Resonant tunneling through states in the barrier of a magnetic tunnel junction has been analyzed theoretically for the case of a spin-polarized density of barrier states. It is shown that for highly spin-polarized barrier states, the magnetoresistance due to resonant tunneling is enhanced compared

  13. Resonant tunneling through double-barrier structures on graphene

    International Nuclear Information System (INIS)

    Deng Wei-Yin; Zhu Rui; Deng Wen-Ji; Xiao Yun-Chang

    2014-01-01

    Quantum resonant tunneling behaviors of double-barrier structures on graphene are investigated under the tight-binding approximation. The Klein tunneling and resonant tunneling are demonstrated for the quasiparticles with energy close to the Dirac points. The Klein tunneling vanishes by increasing the height of the potential barriers to more than 300 meV. The Dirac transport properties continuously change to the Schrödinger ones. It is found that the peaks of resonant tunneling approximate to the eigen-levels of graphene nanoribbons under appropriate boundary conditions. A comparison between the zigzag- and armchair-edge barriers is given. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  14. Effects of barrier fluctuation on the tunneling dynamics in the ...

    Indian Academy of Sciences (India)

    Abstract. We present a numerical investigation of the tunneling dynamics of a particle moving in a bistable potential with fluctuating barrier which is coupled to a non-integrable classical system and study the interplay between classical chaos and barrier fluctuation in the tunneling dynamics. We found that the coupling of the ...

  15. Engineering of tunnel barrier for highly integrated nonvolatile memory applications

    Science.gov (United States)

    You, Hee-Wook; Son, Jung-Woo; Cho, Won-Ju

    2011-03-01

    In this paper, the engineered tunnel barrier technology is introduced by using the engineered tunnel barrier of VARIOT type (SiO2/Si3N4/SiO2) and CRESTED type (Si3N4/SiO2/Si3N4) with Si3N4 and high- k HfO2 layers as charge trapping layers, respectively. In addition, the high- k stacked VARIOT type of SiO2/HfO2/Al2O3 and Al2O3/HfO2/Al2O3 are compared with O/N/O tunnel barrier memory. As a result, the engineered tunnel barrier memory device showed excellent memory characteristics compared to the single SiO2 tunnel barrier memory device, such as very high P/E (program/erase) speed, good retention time and no degradation in endurance characteristics.

  16. Oscillatory dependence of tunneling conductance on the barrier thickness

    Science.gov (United States)

    Lee, B. C.

    2017-11-01

    Oscillatory dependence of tunneling conductance on the barrier thickness is investigated theoretically for the metal/insulator/metal junctions. The tunneling transmission is expressed with the reflection and the transmission amplitudes of each separated metal/insulator interface and the wavevectors inside the barrier. An analytical formula is obtained for the tunneling conductance. The oscillatory behavior of the tunneling conductance is possible with the complex band structure of the insulator. The oscillation period is determined not directly from the real part of the complex wavevector in the insulator, but from the extremal complex spanning vector of the complex Fermi surface of the insulator.

  17. Dielectric breakdown in AlO{sub x} tunnelling barriers

    Energy Technology Data Exchange (ETDEWEB)

    Schaefer, D M; Carara, M; Schelp, L F; Dorneles, L S [Universidade Federal de Santa Maria, Departamento de Fisica, Av. Roraima, 1000, Santa Maria 97105-900, RS (Brazil); Fichtner, P F P, E-mail: lsdorneles@gmail.com [Universidade Federal do Rio Grande do Sul, Instituto de Fisica, Av. Bento Goncalves, 9500, Caixa Postal 15051, Porto Alegre 91501-970, RS (Brazil)

    2011-04-06

    We studied the dielectric breakdown in tunnelling barriers produced by plasma-assisted oxidation of an aluminium surface. The barrier mean height, thickness and the effective tunnelling area were extracted from current versus voltage curves measured at room temperature. The effective tunnelling area ranged from 10{sup -10} to 10{sup -5} cm{sup 2}, corresponding to less than 1% of the geometrical surface of the samples. The estimated electrical field to breakdown agreed with predictions from thermochemical models, and decreased exponentially with the effective tunnelling area.

  18. Fabrication of magnetic tunnel junctions with a single-crystalline LiF tunnel barrier

    Science.gov (United States)

    Krishna Narayananellore, Sai; Doko, Naoki; Matsuo, Norihiro; Saito, Hidekazu; Yuasa, Shinji

    2018-04-01

    We fabricated Fe/LiF/Fe magnetic tunnel junctions (MTJs) by molecular beam epitaxy on a MgO(001) substrate, where LiF is an insulating tunnel barrier with the same crystal structure as MgO (rock-salt type). Crystallographical studies such as transmission electron microscopy and nanobeam electron diffraction observations revealed that the LiF tunnel barrier is single-crystalline and has a LiF(001)[100] ∥ bottom Fe(001)[110] crystal orientation, which is constructed in the same manner as MgO(001) on Fe(001). Also, the in-plane lattice mismatch between the LiF tunnel barrier and the Fe bottom electrode was estimated to be small (about 0.5%). Despite such advantages for the tunnel barrier of the MTJ, the observed tunnel magnetoresistance (MR) ratio was low (˜6% at 20 K) and showed a significant decrease with increasing temperature (˜1% at room temperature). The results imply that indirect tunneling and/or thermally excited carriers in the LiF tunnel barrier, in which the current basically is not spin-polarized, play a major role in electrical transport in the MTJ.

  19. Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

    KAUST Repository

    Useinov, Arthur

    2012-06-01

    In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.

  20. Tunneling time through a barrier using the tempus operator

    International Nuclear Information System (INIS)

    Kobe, Donald H.; Aguilera-Navarro, Valdir C.

    1996-11-01

    The time a particle spends in a classically forbidden region of a potential barrier is expressed as an expectation value of the time operator in that region. Classically, time is canonically conjugate to the energy and is equal to the time a conservative system. The tunneling time is calculated by this approach for a rectangular barrier, which gives a complex time. The imaginary part of the time is non negative, so it is interpreted as a tunneling time. The real part gives a negative value for some values of the parameters, and is therefore rejected because it violates causality. This tunneling time is compared with other tunneling times that have been suggested by also calculating them for the rectangular barrier. 58 refs., 7 figs

  1. ON current enhancement of nanowire Schottky barrier tunnel field effect transistors

    Science.gov (United States)

    Takei, Kohei; Hashimoto, Shuichiro; Sun, Jing; Zhang, Xu; Asada, Shuhei; Xu, Taiyu; Matsukawa, Takashi; Masahara, Meishoku; Watanabe, Takanobu

    2016-04-01

    Silicon nanowire Schottky barrier tunnel field effect transistors (NW-SBTFETs) are promising structures for high performance devices. In this study, we fabricated NW-SBTFETs to investigate the effect of nanowire structure on the device characteristics. The NW-SBTFETs were operated with a backgate bias, and the experimental results demonstrate that the ON current density is enhanced by narrowing the width of the nanowire. We confirmed using the Fowler-Nordheim plot that the drain current in the ON state mainly comprises the quantum tunneling component through the Schottky barrier. Comparison with a technology computer aided design (TCAD) simulation revealed that the enhancement is attributed to the electric field concentration at the corners of cross-section of the NW. The study findings suggest an effective approach to securing the ON current by Schottky barrier width modulation.

  2. Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures

    Science.gov (United States)

    Davidović, D.; Ying, H.; Dark, J.; Wier, B. R.; Ge, L.; Lourenco, N. E.; Omprakash, A. P.; Mourigal, M.; Cressler, J. D.

    2017-08-01

    Quantum-transport measurements in advanced silicon-germanium heterojunction bipolar transistors (SiGe HBTs) are presented and analyzed, including tunneling spectroscopy of discrete impurity levels localized within the transistor and the dependence on an applied magnetic field. The collector current at millikelvin temperatures is well accounted for by ideal electron tunneling throughout the entire base. The amplification principle at millikelvin temperatures is fundamentally quantum mechanical in nature: an increase in base voltage, requiring a moderate base current, creates an equal and opposite decrease in the tunneling barrier seen by the electrons in the emitter, thereby increasing the collector current significantly more than the base current, producing current gain. Highly scaled SiGe HBTs operate predictably at millikelvin temperatures, thus opening the possibility of viable SiGe millikelvin circuitry.

  3. Tuning the tunneling probability by mechanical stress in Schottky barrier based reconfigurable nanowire transistors

    Science.gov (United States)

    Baldauf, Tim; Heinzig, André; Trommer, Jens; Mikolajick, Thomas; Weber, Walter Michael

    2017-02-01

    Mechanical stress is an established and important tool of the semiconductor industry to improve the performance of modern transistors. It is well understood for the enhancement of carrier mobility but rather unexplored for the control of the tunneling probability for injection dominated research devices based on tunneling phenomena, such as tunnel FETs, resonant tunnel FETs and reconfigurable Schottky FETs. In this work, the effect of stress on the tunneling probability and overall transistor characteristics is studied by three-dimensional device simulations in the example of reconfigurable silicon nanowire Schottky barrier transistors using two independently gated Schottky junctions. To this end, four different stress sources are investigated. The effects of mechanical stress on the average effective tunneling mass and on the multi-valley band structure applying the deformation potential theory are being considered. The transfer characteristics of strained transistors in n- and p-configuration and corresponding charge carrier tunneling are analyzed with respect to the current ratio between electron and hole conduction. For the implementation of these devices into complementary circuits, the mandatory current ratio of unity can be achieved by appropriate mechanical stress either by nanowire oxidation or the application of a stressed top layer.

  4. Silicon based substrate with calcium aluminosilicate/thermal barrier layer

    Science.gov (United States)

    Eaton, Jr., Harry Edwin (Inventor); Allen, William Patrick (Inventor); Miller, Robert Alden (Inventor); Jacobson, Nathan S. (Inventor); Smialek, James L. (Inventor); Opila, Elizabeth J. (Inventor); Lee, Kang N. (Inventor); Nagaraj, Bangalore A. (Inventor); Wang, Hongyu (Inventor); Meschter, Peter Joel (Inventor)

    2001-01-01

    A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a calcium alumino silicate.

  5. Instantaneous Tunneling Flight Time for Wavepacket Transmission through Asymmetric Barriers.

    Science.gov (United States)

    Petersen, Jakob; Pollak, Eli

    2018-04-12

    The time it takes a particle to tunnel through the asymmetric Eckart barrier potential is investigated using Gaussian wavepackets, where the barrier serves as a model for the potential along a chemical reaction coordinate. We have previously shown that the, in principle experimentally measurable, tunneling flight time, which determines the time taken by the transmitted particle to traverse the barrier, vanishes for symmetric potentials like the Eckart and square barrier [ Petersen , J. ; Pollak , E. J. Phys. Chem. Lett. 2017 , 9 , 4017 ]. Here we show that the same result is obtained for the asymmetric Eckart barrier potential, and therefore, the zero tunneling flight time seems to be a general result for one-dimensional time-independent potentials. The wavepacket dynamics is simulated using both an exact quantum mechanical method and a classical Wigner prescription. The excellent agreement between the two methods shows that quantum coherences are not important in pure one-dimensional tunneling and reinforces the conclusion that the tunneling flight time vanishes.

  6. Measurements of tunneling barrier thicknesses for Nb/Al–AlOx/Nb tunnel junctions

    International Nuclear Information System (INIS)

    Kang, Xinjie; Ying, Liliang; Wang, Hai; Zhang, Guofeng; Peng, Wei; Kong, Xiangyan; Xie, Xiaoming; Wang, Zhen

    2014-01-01

    Highlights: • We estimate the average barrier height (Φ) of Nb/Al–AlO x /Nb tunnel junctions. • Dependence of the AlOx thickness (dAlOx) on O 2 exposure was described. • The thicknesses of AlOx barriers were measured using transmission electron microscopy (TEM). • X-ray Reflection (XRR) measurements and simulations were used to verify the AlOx thickness. - Abstract: The tunnel barrier thicknesses of Nb/Al–AlO x /Nb tunnel junctions were measured using transmission electron microscopy (TEM) and X-ray Reflection (XRR). By investigating the barrier thickness dependence of current density J c , the barrier height for Nb/Al–AlO x /Nb junctions was calculated. Nb/Al–AlO x /Nb junctions with different J c were fabricated by controlling the O 2 exposure in Al oxidation. The junctions show good tunneling properties with subgap leakage factor V m larger than 30 mV in the range of J c from tens of A/cm 2 to several kA/cm 2 . TEM images showed clear interface and indicated the AlO x thicknesses ranging from 0.8 nm to 1.9 nm, and the average barrier height was estimated to be 0.17 eV for Nb/Al–AlO x /Nb tunnel junctions

  7. Flexible MgO Barrier Magnetic Tunnel Junctions.

    Science.gov (United States)

    Loong, Li Ming; Lee, Wonho; Qiu, Xuepeng; Yang, Ping; Kawai, Hiroyo; Saeys, Mark; Ahn, Jong-Hyun; Yang, Hyunsoo

    2016-07-01

    Flexible MgO barrier magnetic tunnel junction (MTJ) devices are fabricated using a transfer printing process. The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process. This approach could be useful for flexible electronic systems that require high-performance memory components. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Strained silicon and silicon germanium nanowire tunnel FETs and inverters

    OpenAIRE

    Richter, Simon

    2014-01-01

    Reducing power consumption is an important issue for integrated circuits in portable devices relying on batteries and systems without external power supply. Scaling of the supply voltage VDD in integrated circuits is a powerful tool for reducing the power consumption, due to the quadratic dependence on VDD. MOSFETs, however, exhibit a fundamental limitation for the drain current increase per applied gate voltage difference. The tunnel field-effect transistor (TFET) provides the ability for be...

  9. Spin-polarized inelastic tunneling through insulating barriers.

    Science.gov (United States)

    Lu, Y; Tran, M; Jaffrès, H; Seneor, P; Deranlot, C; Petroff, F; George, J-M; Lépine, B; Ababou, S; Jézéquel, G

    2009-05-01

    Spin-conserving hopping transport through chains of localized states has been evidenced by taking benefit of the high degree of spin-polarization of CoFeB-MgO-CoFeB magnetic tunnel junctions. In particular, our data show that relatively thick MgO barriers doped with boron favor the activation of spin-conserving inelastic channels through a chain of three localized states and leading to reduced magnetoresistance effects. We propose an extension of the Glazman-Matveev theory to the case of ferromagnetic reservoirs to account for spin-polarized inelastic tunneling through nonmagnetic localized states embedded in an insulating barrier.

  10. Anisotropic tunneling resistance in a phosphorene-based magnetic barrier

    Science.gov (United States)

    Zhai, Feng; Hu, Wei; Lu, Junqiang

    2017-10-01

    We investigate the ballistic tunneling transport properties of a monolayer of black phosphorus under a magnetic barrier. The conductance of the system depends strongly on the orientation of the magnetic barrier, which is suppressed maximally when the magnetic barrier is oriented along the armchair direction. The mechanism relies on the highly anisotropic energy dispersion of phosphorene and the magnetic-barrier-induced suppression of available phase space for transmission. The magnetoresistance is enhanced by the reduction of the band gap under the same effective mass components.

  11. Resonant tunnelling from nanometre-scale silicon field emission cathodes

    International Nuclear Information System (INIS)

    Johnson, S.; Markwitz, A.

    2005-01-01

    In this paper we report the field emission properties of self-assembled silicon nanostructures formed on an n-type silicon (100) substrate by electron beam annealing. The nanostructures are square based, with an average height of 8 nm and are distributed randomly over the entire substrate surface. Following conditioning, the silicon nanostructure field emission characteristics become stable and reproducible with electron emission occurring for fields as low as 3 Vμm-1. At higher fields, a superimposed on a background current well described by conventional Fowler-Nordheim theory. These current peaks are understood to result from enhanced tunnelling through resonant states formed at the substrate-nanostructure and nanostructure-vacuum interface. (author). 13 refs., 3 figs

  12. High-performance silicon nanotube tunneling FET for ultralow-power logic applications

    KAUST Repository

    Fahad, Hossain M.

    2013-03-01

    To increase typically low output drive currents from tunnel field-effect transistors (FETs), we show a silicon vertical nanotube (NT) architecture-based FET\\'s effectiveness. Using core (inner) and shell (outer) gate stacks, the silicon NT tunneling FET shows a sub-60 mV/dec subthreshold slope, ultralow off -state leakage current, higher drive current compared with gate-all-around nanowire silicon tunnel FETs. © 1963-2012 IEEE.

  13. Locally addressable tunnel barriers within a carbon nanotube

    DEFF Research Database (Denmark)

    Biercuk, M.; Mason, N.; Chow, J.

    2003-01-01

    We report the realization and characterization of independently controllable tunnel barriers within a carbon nanotube. The nanotubes are mechanically bent or kinked using an atomic force microscope, and top gates are subsequently placed near each kink. Transport measurements indicate that the kinks...

  14. Double-Barrier Resonant Tunneling in Three and Two Dimensions

    Science.gov (United States)

    Zaslavsky, Alexander

    Double-barrier resonant tunneling devices have attracted great scientific interest, both as novel physical systems based on strong size quantization that exhibit unusual transport behavior and also as a promising class of semiconductor structures for high-speed electronic devices. This thesis describes the physics of transport in double-barrier structures fabricated by conventional planar growth, where the fundamental process involves tunneling from three-dimensional (3D) into two-dimensional (2D) densities of electronic states, as well as in novel 2D double-barrier structures fabricated by regrowth, where 2D electrons tunnel into well-separated ID quantum wire subbands. A brief introduction to the basic theory of resonant tunneling and the results of low-temperature I(V) transport measurements on high -quality planar double-barrier devices is presented in Chapter 1. Chapter 2 examines the bistable I(V) characteristic observed in specially designed asymmetric devices, with the intrinsic nature of this effect confirmed by parallel field magnetotunneling measurements. In Chapter 3 transverse field magnetotunneling is employed to experimentally verify the energy and transverse momentum selection rules that govern transport in resonant tunneling devices. Chapter 4 focuses on the fabrication of 2D resonant tunneling devices by liquid phase epitaxial regrowth on patterned substrates. A brief overview of liquid phase epitaxy and two different in-situ patterning techniques--selective meltback and cleaving inside the chamber--are presented. The measurements of the 2D device fabricated by regrowth on cleaved substrates are presented and analyzed in Chapter 5. The new possibilities opened up by the cleaved substrate regrowth techniques are also discussed, including the realization of an edge -regrown superlattice with novel high-field transport characteristics.

  15. Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

    KAUST Repository

    Useinov, A. N.

    2011-08-24

    We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

  16. Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers.

    Science.gov (United States)

    Wang, Jing; Huang, Qikun; Shi, Peng; Zhang, Kun; Tian, Yufeng; Yan, Shishen; Chen, Yanxue; Liu, Guolei; Kang, Shishou; Mei, Liangmo

    2017-10-26

    The development of multifunctional spintronic devices requires simultaneous control of multiple degrees of freedom of electrons, such as charge, spin and orbit, and especially a new physical functionality can be realized by combining two or more different physical mechanisms in one specific device. Here, we report the realization of novel tunneling rectification magnetoresistance (TRMR), where the charge-related rectification and spin-dependent tunneling magnetoresistance are integrated in Co/CoO-ZnO/Co magnetic tunneling junctions with asymmetric tunneling barriers. Moreover, by simultaneously applying direct current and alternating current to the devices, the TRMR has been remarkably tuned in the range from -300% to 2200% at low temperature. This proof-of-concept investigation provides an unexplored avenue towards electrical and magnetic control of charge and spin, which may apply to other heterojunctions to give rise to more fascinating emergent functionalities for future spintronics applications.

  17. Tunneling spectroscopy on superconducting Nb3Sn with artioficial barriers

    International Nuclear Information System (INIS)

    Schneider, U.

    1984-03-01

    Tunneling diodes on Nb 3 Sn were prepared by magnetron sputtering. The superconducting transition temperatures of the Nb 3 Sn films were in the range of 5 to 18 K. An energetically low-lying structure in the tunneling density of states has been localized by detailed studies of the second derivative of the current-voltage characteristics of the diodes. This structure was found near 5.5 meV for stoichiometric Nb 3 Sn (Tsub(c) approx.= 18 K) and at 6.7 meV for understoichiometric Nb 3 Sn (Tsub(c) approx.= 5 K). The minimum in the conductance at zero energy found in the normal state could be identified to be mainly due to inelastic phonon processes of barrier phonons and Nb 3 Sn phonons. Deformations were found in the tunneling density of states of stoichiometric Nb 3 Sn diodes which lead to contradiction when explained by proximity effects. (orig./GSCH)

  18. Fabrication of metallic single electron transistors featuring plasma enhanced atomic layer deposition of tunnel barriers

    Science.gov (United States)

    Karbasian, Golnaz

    The continuing increase of the device density in integrated circuits (ICs) gives rise to the high level of power that is dissipated per unit area and consequently a high temperature in the circuits. Since temperature affects the performance and reliability of the circuits, minimization of the energy consumption in logic devices is now the center of attention. According to the International Technology Roadmaps for Semiconductors (ITRS), single electron transistors (SETs) hold the promise of achieving the lowest power of any known logic device, as low as 1x10-18 J per switching event. Moreover, SETs are the most sensitive electrometers to date, and are capable of detecting a fraction of an electron charge. Despite their low power consumption and high sensitivity for charge detection, room temperature operation of these devices is quite challenging mainly due to lithographical constraints in fabricating structures with the required dimensions of less than 10 nm. Silicon based SETs have been reported to operate at room temperature. However, they all suffer from significant variation in batch-to-batch performance, low fabrication yield, and temperature-dependent tunnel barrier height. In this project, we explored the fabrication of SETs featuring metal-insulator-metal (MIM) tunnel junctions. While Si-based SETs suffer from undesirable effect of dopants that result in irregularities in the device behavior, in metal-based SETs the device components (tunnel barrier, island, and the leads) are well-defined. Therefore, metal SETs are potentially more predictable in behavior, making them easier to incorporate into circuits, and easier to check against theoretical models. Here, the proposed fabrication method takes advantage of unique properties of chemical mechanical polishing (CMP) and plasma enhanced atomic layer deposition (PEALD). Chemical mechanical polishing provides a path for tuning the dimensions of the tunnel junctions, surpassing the limits imposed by electron beam

  19. Hydrogen-free amorphous silicon with no tunneling states.

    Science.gov (United States)

    Liu, Xiao; Queen, Daniel R; Metcalf, Thomas H; Karel, Julie E; Hellman, Frances

    2014-07-11

    The ubiquitous low-energy excitations, known as two-level tunneling systems (TLSs), are one of the universal phenomena of amorphous solids. Low temperature elastic measurements show that e-beam amorphous silicon (a-Si) contains a variable density of TLSs which diminishes as the growth temperature reaches 400 °C. Structural analyses show that these a-Si films become denser and more structurally ordered. We conclude that the enhanced surface energetics at a high growth temperature improved the amorphous structural network of e-beam a-Si and removed TLSs. This work obviates the role hydrogen was previously thought to play in removing TLSs in the hydrogenated form of a-Si and suggests it is possible to prepare "perfect" amorphous solids with "crystal-like" properties for applications.

  20. The critical role of the barrier thickness in spin filter tunneling

    International Nuclear Information System (INIS)

    Miller, Casey W.

    2009-01-01

    Spin filter tunneling is considered in the low bias limit as functions of the temperature dependent barrier parameters. We demonstrate the generation of spin polarized tunneling currents in relation to the magnetic order parameter, and discuss how an interfacially suppressed order parameter leads to a temperature dependent tunneling current asymmetry. Analyzing the full parameter space reveals that the often overlooked barrier thickness plays a critical role in spin filter tunneling. With all else fixed, thicker barriers yield higher spin polarization, and allow a given polarization to be achieved at higher temperatures. This insight may open the door for new materials to serve as spin filter barriers.

  1. Tunnel barrier and noncollinear magnetization effects on shot noise in ferromagnetic/semiconductor/ferromagnetic heterojunctions

    International Nuclear Information System (INIS)

    An Xingtao; Liu Jianjun

    2008-01-01

    Based on the scattering approach, we investigate transport properties of electrons in a one-dimensional waveguide that contains a ferromagnetic/semiconductor/ferromagnetic heterojunction and tunnel barriers in the presence of Rashba and Dresselhaus spin-orbit interactions. We simultaneously consider significant quantum size effects, quantum coherence, Rashba and Dresselhaus spin-orbit interactions and noncollinear magnetizations. It is found that the tunnel barrier plays a decisive role in the transmission coefficient and shot noise of the ballistic spin electron transport through the heterojunction. When the small tunnel barriers are considered, the transport properties of electrons are quite different from those without tunnel barriers

  2. Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO{sub 2}/Si structure

    Energy Technology Data Exchange (ETDEWEB)

    Vexler, M. I., E-mail: shulekin@mail.ioffe.ru; Grekhov, I. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-05-15

    The features of electron tunneling from or into the silicon valence band in a metal–insulator–semiconductor system with the HfO{sub 2}(ZrO{sub 2})/SiO{sub 2} double-layer insulator are theoretically analyzed for different modes. It is demonstrated that the valence-band current plays a less important role in structures with HfO{sub 2}(ZrO{sub 2})/SiO{sub 2} than in structures containing only silicon dioxide. In the case of a very wide-gap high-K oxide ZrO{sub 2}, nonmonotonic behavior related to tunneling through the upper barrier is predicted for the valence-band–metal current component. The use of an insulator stack can offer certain advantages for some devices, including diodes, bipolar tunnel-emitter transistors, and resonant-tunneling diodes, along with the traditional use of high-K insulators in a field-effect transistor.

  3. Search for Spin Filtering By Electron Tunneling Through Ferromagnetic EuS Barriers in Pbs

    Science.gov (United States)

    Figielski, T.; Morawski, A.; Wosinski, T.; Wrotek, S.; Makosa, A.; Lusakowska, E.; Story, T.; Sipatov, A. Yu.; Szczerbakow, A.; Grasza, K.; hide

    2002-01-01

    Perpendicular transport through single- and double-barrier heterostructures consisting of ferromagnetic EuS layers embedded into PbS matrix was investigated. Manifestations of both resonant tunneling and spin filtering through EuS barrier have been observed.

  4. Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

    KAUST Repository

    Useinov, Arthur

    2011-10-22

    In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR-V curves, output voltages and I-V characteristics for negative and positive values of applied voltages were carried out using MTJs with CoFeB/MgO interfaces as an example. Asymmetry of the experimental TMR-V curves is explained by different values of the minority and majority Fermi wave vectors for the left and right sides of the tunnel barrier, which arises due to different annealing regimes. Electron tunneling in DMTJs was simulated in two ways: (i) Coherent tunneling, where the DMTJ is modeled as one tunnel system and (ii) consecutive tunneling, where the DMTJ is modeled by two single barrier junctions connected in series. © 2012 Elsevier B.V. All rights reserved.

  5. Silicon Transporters and Effects of Silicon Amendments in Strawberry under High Tunnel and Field Conditions

    Directory of Open Access Journals (Sweden)

    Samuel Ouellette

    2017-06-01

    Full Text Available Together with longer production periods, the commercial transition to day-neutral strawberry (Fragaria × ananassa varieties has favored the development of diseases such as powdery mildew (Podosphaera aphanis that thrives in late summer-early fall. In an attempt to find alternative solutions to fungicides currently employed to curb the disease, we wanted to investigate the potential of silicon (Si amendments that have been associated with prophylactic properties against powdery mildews. To this end, our first objective was to determine if strawberry was a Si-competent species following the recent characterization of the properties of Si transporters that plants must carry to uptake silicic acid. Based on genomic data, we were able to conclude that strawberry contained both functional influx (Lsi1 and efflux (Lsi2 transporters for Si uptake. Subsequently commercial experiments under high tunnel and field conditions were conducted with different Si fertilization regimes: constant soluble Si feeding in high tunnel, and bi-weekly soluble Si feeding or three concentrations of calcium silicate fertilization in the field. Results from high tunnel experiments showed that strawberry could accumulate as much as 3% Si on a dry-weight basis, the highest concentration ever reported for this species. All six tested cultivars contained roughly the same concentration, thereby confirming the limited genetic variability, also observed in other species, associated with the trait. Silicon fertilization under high tunnel led to a significant reduction of powdery mildew severity in both years and on all cultivars, and a significant increase in yield of marketable fruits reaching as much as 300% with cv. Monterey. By contrast, Si fertilization under field conditions in soils deficient in plant available Si, either in soluble or solid form, did not result in significant accumulation of Si in plants, regardless of the cultivars, year or concentrations. Our results have

  6. Silicon surface barrier detectors used for liquid hydrogen density measurement

    Science.gov (United States)

    James, D. T.; Milam, J. K.; Winslett, H. B.

    1968-01-01

    Multichannel system employing a radioisotope radiation source, strontium-90, radiation detector, and a silicon surface barrier detector, measures the local density of liquid hydrogen at various levels in a storage tank. The instrument contains electronic equipment for collecting the density information, and a data handling system for processing this information.

  7. Enhanced Plasmonic Light Absorption for Silicon Schottky-Barrier Photodetectors

    DEFF Research Database (Denmark)

    Hashemi, Mahdieh; Farzad, Mahmood Hosseini; Mortensen, N. Asger

    2013-01-01

    is transferred into hot carriers near the Schottky barrier. The proposed broadband photodetector with a bi-grating metallic structure on the silicon substrate enables to absorb 76 % of the infrared light in the metal with a 200-nm bandwidth, while staying insensitive to the incident angle. These results pave...

  8. Internal resistor of multi-functional tunnel barrier for selectivity and switching uniformity in resistive random access memory.

    Science.gov (United States)

    Lee, Sangheon; Woo, Jiyong; Lee, Daeseok; Cha, Euijun; Hwang, Hyunsang

    2014-01-01

    In this research, we analyzed the multi-functional role of a tunnel barrier that can be integrated in devices. This tunnel barrier, acting as an internal resistor, changes its resistance with applied bias. Therefore, the current flow in the devices can be controlled by a tunneling mechanism that modifies the tunnel barrier thickness for non-linearity and switching uniformity of devices. When a device is in a low-resistance state, the tunnel barrier controls the current behavior of the device because most of the bias is applied to the tunnel barrier owing to its higher resistance. Furthermore, the tunnel barrier induces uniform filament formation during set operation with the tunnel barrier controlling the current flow.

  9. The time of discrete spectrum identical particles tunneling at their simultaneous passing over rectangular quantum barrier

    International Nuclear Information System (INIS)

    Martsenyuk, L.S.

    2010-01-01

    Research of influence of exchange interaction of identical particles for the time of their simultaneous tunneling through a rectangular quantum barrier is lead. The account of identity leads to necessity of symmetrisation of wave function owing to what in the formula describing interaction of two particles, arises an additional element. In result the parameters of tunneling, including time of tunneling change. Time of tunneling is calculated from the formula received in work from the size of exchange interaction of two particles simultaneously crossing a rectangular quantum barrier.

  10. Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets

    Science.gov (United States)

    Min, Byoung-Chul; Motohashi, Kazunari; Lodder, Cock; Jansen, Ron

    2006-10-01

    Magnetic tunnel junctions have become ubiquitous components appearing in magnetic random-access memory, read heads of magnetic disk drives and semiconductor-based spin devices. Inserting a tunnel barrier has been key to achieving spin injection from ferromagnetic (FM) metals into GaAs, but spin injection into Si has remained elusive. We show that Schottky barrier formation leads to a huge conductivity mismatch of the FM tunnel contact and Si, which cannot be solved by the well-known method of adjusting the tunnel barrier thickness. We present a radically different approach for spin-tunnelling resistance control using low-work-function ferromagnets, inserted at the FM/tunnel barrier interface. We demonstrate that in this way the resistance-area (RA) product of FM/Al2O3/Si contacts can be tuned over eight orders of magnitude, while simultaneously maintaining a reasonable tunnel spin polarization. This raises prospects for Si-based spintronics and presents a new category of ferromagnetic materials for spin-tunnel contacts in low-RA-product applications.

  11. Surface barrier silicon detectors with a large active area

    International Nuclear Information System (INIS)

    Kim, Y.; Husimi, K.; Ikeda, Y.; Kim, C.; Ohkawa, S.; Sakai, T.

    1985-01-01

    Surface barrier silicon detectors with a large active area have been produced by using high resistive n-type silicon crystals, diameters of which are 3 to 5 inches. High quality detectors with a low leakage current and a low noise were achieved by developing the improved surface treatment. Characteristics of detectors obtained are good in energy resolution compared with conventional large area Si(Li) detectors. It has also been confirmed that local dead region is not found from measuring results of photo-pulse injection

  12. Determination of the thickness of Al2O3 barriers in magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Buchanan, J.D.R.; Hase, T.P.A.; Tanner, B.K.; Hughes, N.D.; Hicken, R.J.

    2002-01-01

    The barrier thickness in magnetic spin-dependent tunnel junctions with Al 2 O 3 barriers has been measured using grazing incidence x-ray reflectivity and by fitting the tunneling current to the Simmons model. We have studied the effect of glow discharge oxidation time on the barrier structure, revealing a substantial increase in Al 2 O 3 thickness with oxidation. The greater thickness of barrier measured using grazing incidence x-ray reflectivity compared with that obtained by fitting current density-voltage to the Simmons electron tunneling model suggests that electron tunneling is localized to specific regions across the barrier, where the thickness is reduced by fluctuations due to nonconformal roughness

  13. Ideality and Tunneling Level Systems (TLS) in amorphous silicon films.

    Science.gov (United States)

    Hellman, Frances

    Heat capacity, sound velocity, and internal friction of covalently bonded amorphous silicon (a-Si) films with and without hydrogen show that low energy excitations commonly called tunneling or two level systems (TLS) can be tuned over nearly 3 decades, from below detectable limits to the range commonly seen in glassy systems. This tuning is accomplished by growth temperature, thickness, growth rate, light soaking or annealing. We see a strong correlation with atomic density in a-Si and in literature analysis of other glasses, as well as with dangling bond density, sound velocity, and bond angle distribution as measured by Raman spectroscopy, but TLS density varies by orders of magnitude while these other measures of disorder vary by less than a factor of two. The lowest TLS films are grown at temperatures near 0.8 of the theoretical glass transition temperature of Si, similar to work on polymer films and suggestive that the high surface mobility at relatively low temperature of vapor deposition can produce materials close to an ideal glass, with higher density, lower energy, and low TLS due to fewer nearby configurations with similarly low energy. The TLS measured by heat capacity and internal friction are strongly correlated for pure a-Si, but not for hydrogenated a-Si, suggesting that the standard TLS model works for a-Si, but that a-Si:H possess TLS that are decoupled from the acoustic waves measured by internal friction. Internal friction measures those TLS that introduce mechanical damping; we are in the process of measuring low T dielectric loss which yield TLS with dipole moments in order to explore the correlation between different types of TLS. Additionally, a strong correlation is found between an excess T3 term (well above the sound velocity-derived Debye contribution) and the linear term in heat capacity, suggesting a common origin. I thank members of my research group and my collaborators for contributions to this work and NSF-DMR-1508828 for support.

  14. Superluminal tunneling of a relativistic half-integer spin particle through a potential barrier

    Directory of Open Access Journals (Sweden)

    Nanni Luca

    2017-11-01

    Full Text Available This paper investigates the problem of a relativistic Dirac half-integer spin free particle tunneling through a rectangular quantum-mechanical barrier. If the energy difference between the barrier and the particle is positive, and the barrier width is large enough, there is proof that the tunneling may be superluminal. For first spinor components of particle and antiparticle states, the tunneling is always superluminal regardless the barrier width. Conversely, the second spinor components of particle and antiparticle states may be either subluminal or superluminal depending on the barrier width. These results derive from studying the tunneling time in terms of phase time. For the first spinor components of particle and antiparticle states, it is always negative while for the second spinor components of particle and antiparticle states, it is always positive, whatever the height and width of the barrier. In total, the tunneling time always remains positive for particle states while it becomes negative for antiparticle ones. Furthermore, the phase time tends to zero, increasing the potential barrier both for particle and antiparticle states. This agrees with the interpretation of quantum tunneling that the Heisenberg uncertainty principle provides. This study’s results are innovative with respect to those available in the literature. Moreover, they show that the superluminal behaviour of particles occurs in those processes with high-energy confinement.

  15. Temperature dependence of shot noise in double barrier magnetic tunnel junctions

    Science.gov (United States)

    Niu, Jiasen; Liu, Liang; Feng, J. F.; Han, X. F.; Coey, J. M. D.; Zhang, X.-G.; Wei, Jian

    2018-03-01

    Shot noise reveals spin dependent transport properties in a magnetic tunnel junction. We report measurement of shot noise in CoFeB/MgO/CoFeB/MgO/CoFeB double barrier magnetic tunnel junctions, which shows a strong temperature dependence. The Fano factor used to characterize shot noise increases with decreasing temperature. A sequential tunneling model can be used to account for these results, in which a larger Fano factor results from larger spin relaxation length at lower temperatures.

  16. Electron-spin polarization in tunnel junctions with ferromagnetic EuS barriers

    International Nuclear Information System (INIS)

    Hao, X.; Moodera, J.S.; Meservey, R.

    1989-01-01

    The authors report here spin-polarized tunneling experiments using non-ferromagnetic electrodes and ferromagnetic EuS barriers. Because of the conduction band in EuS splits into spin-up and spin-down subbands when the temperature is below 16.7 K, the Curie temperature of EuS, the tunnel barrier for electrons with different spin directions is different, therefore giving rise to tunnel current polarization. The spin-filter effect, as it may be called, was observed earlier, directly or indirectly, by several groups: Esaki et al. made a tunneling study on junctions having EuS and EuSe barriers; Thompson et al. studied Schottky barrier tunneling between In and doped EuS; Muller et al. and Kisker et al. performed electron field emission experiments on EuS-coated tungsten tips. The field emission experiments gave a maximum polarization of (89 + 7)% for the emitted electrons. Although the previous tunneling studies did not directly show electron polarization, their results were explained by the same spin- filter effect. This work uses the spin-polarized tunneling technique to show directly that tunnel current is indeed polarized and polarization can be as high as 85%

  17. An analytic model for gate-all-around silicon nanowire tunneling field effect transistors

    Science.gov (United States)

    Liu, Ying; He, Jin; Chan, Mansun; Du, Cai-Xia; Ye, Yun; Zhao, Wei; Wu, Wen; Deng, Wan-Ling; Wang, Wen-Ping

    2014-09-01

    An analytical model of gate-all-around (GAA) silicon nanowire tunneling field effect transistors (NW-TFETs) is developted based on the surface potential solutions in the channel direction and considering the band to band tunneling (BTBT) efficiency. The three-dimensional Poisson equation is solved to obtain the surface potential distributions in the partition regions along the channel direction for the NW-TFET, and a tunneling current model using Kane's expression is developed. The validity of the developed model is shown by the good agreement between the model predictions and the TCAD simulation results.

  18. The time of simultaneous tunneling of identical particles through the rectangular quantum barrier

    International Nuclear Information System (INIS)

    Martsenyuk, L.S.; Omelchenko, S.A.

    2010-01-01

    Work is devoted to studying the influence of exchange processes on a time of simultaneous crossing by identical particles of a rectangular quantum barrier. It is shown, that such processes essentially influence on the parameters of tunneling. The size of addition to time of identical particles tunneling, arising up because of their exchange interaction in a field of a rectangular quantum barrier is first counted.

  19. X-ray absorption spectroscopy studies on magnetic tunnel junctions with AlO and AlN tunnel barriers

    International Nuclear Information System (INIS)

    Mun, B. S.; Moon, J. C.; Hong, S. W.; Kang, K. S.; Kim, K.; Kim, T. W.; Ju, H. L.

    2006-01-01

    X-ray photoelectron spectroscopy (XPS) and x-ray absorption spectroscopy (XAS) measurements of the optimized magnetic tunnel junctions (MTJs) with AlO and AlN barriers have been performed to study the chemical structures of the barrier and the underlying layer. These MTJs with AlO and AlN barriers exhibited increased tunneling magnetoresistance (TMR) after annealing at 200 deg. C from 27% to 45% and from 25% to 33%, respectively. Surprisingly, the XPS and XAS measurements confirmed that both the as-grown and the annealed MTJs had metallic Co and Fe at the interface between the barrier and the underlying CoFe layer. After annealing, under-stoichiometric AlO x and AlN x phases in MTJs with AlO and AlN barriers partially transformed into stoichiometric Al 2 O 3 and AlN phases, respectively. Thus the increase in TMR after annealing for MTJs with clean interface between the barrier and the underlying layer is believed due to the anion redistribution inside the barrier layer, not from back diffusion from pinned magnetic layer to barrier layer

  20. Large-scale fabrication of BN tunnel barriers for graphene spintronics

    International Nuclear Information System (INIS)

    Fu, Wangyang; Makk, Péter; Maurand, Romain; Bräuninger, Matthias; Schönenberger, Christian

    2014-01-01

    We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier material are CVD-grown. The tunnel barrier is realized by Hexagonal boron nitride, used either as a monolayer or bilayer and placed over the graphene. Spin transport experiments were performed using ferromagnetic contacts deposited onto the barrier. We find that spin injection is still greatly suppressed in devices with a monolayer tunneling barrier due to resistance mismatch. This is, however, not the case for devices with bilayer barriers. For those devices, a spin relaxation time of ∼260 ps intrinsic to the CVD graphene material is deduced. This time scale is comparable to those reported for exfoliated graphene, suggesting that this CVD approach is promising for spintronic applications which require scalable materials

  1. Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOX barriers

    Science.gov (United States)

    Newhouse-Illige, T.; Xu, Y. H.; Liu, Y. H.; Huang, S.; Kato, H.; Bi, C.; Xu, M.; LeRoy, B. J.; Wang, W. G.

    2018-02-01

    Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here, we investigate the quality of the GdOX barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlOX and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence including sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.

  2. Silicon based substrate with calcium aluminosilicate environmental/thermal barrier layer

    Science.gov (United States)

    Eaton, Jr., Harry Edwin (Inventor); Allen, William Patrick (Inventor); Miller, Robert Alden (Inventor); Jacobson, Nathan S. (Inventor); Smialek, James L. (Inventor); Opila, Elizabeth J. (Inventor); Lee, Kang N. (Inventor); Nagaraj, Bangalore A. (Inventor); Wang, Hongyu (Inventor); Meschter, Peter Joel (Inventor)

    2001-01-01

    A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a calcium alumino silicate.

  3. Improved memory performance of metal—oxide—nitride—oxide—silicon by annealing the SiO2 tunnel layer in different nitridation atmospheres

    Science.gov (United States)

    Meilin, He; Jingping, Xu; Jianxiong, Chen; Lu, Liu

    2013-11-01

    Metal—oxide—nitride—oxide—silicon (MONOS) capacitors with thermally grown SiO2 as the tunnel layer are fabricated, and the effects of different ambient nitridation (NH3, NO and N2O) on the characteristics of the memory capacitors are investigated. The experimental results indicate that the device with tunnel oxide annealed in NO ambient exhibits excellent memory characteristics, i.e. a large memory window, high program/erase speed, and good endurance and retention performance (the charge loss rate is 14.5% after 10 years). The mechanism involved is that much more nitrogen is incorporated into the tunnel oxide during NO annealing, resulting in a lower tunneling barrier height and smaller interface state density. Thus, there is a higher tunneling rate under a high electric field and a lower probability of trap-assisted tunneling during retention, as compared to N2O annealing. Furthermore, compared with the NH3-annealed device, no weak Si—H bonds and electron traps related to the hydrogen are introduced for the NO-annealed devices, giving a high-quality and high-reliability SiON tunneling layer and SiON/Si interface due to the suitable nitridation and oxidation roles of NO.

  4. In-plane tunnelling field-effect transistor integrated on Silicon.

    Science.gov (United States)

    Fina, Ignasi; Apachitei, Geanina; Preziosi, Daniele; Deniz, Hakan; Kriegner, Dominik; Marti, Xavier; Alexe, Marin

    2015-09-25

    Silicon has persevered as the primary substrate of microelectronics during last decades. During last years, it has been gradually embracing the integration of ferroelectricity and ferromagnetism. The successful incorporation of these two functionalities to silicon has delivered the desired non-volatility via charge-effects and giant magneto-resistance. On the other hand, there has been a numerous demonstrations of the so-called magnetoelectric effect (coupling between ferroelectric and ferromagnetic order) using nearly-perfect heterostructures. However, the scrutiny of the ingredients that lead to magnetoelectric coupling, namely magnetic moment and a conducting channel, does not necessarily require structural perfection. In this work, we circumvent the stringent requirements for epilayers while preserving the magnetoelectric functionality in a silicon-integrated device. Additionally, we have identified an in-plane tunnelling mechanism which responds to a vertical electric field. This genuine electroresistance effect is distinct from known resistive-switching or tunnel electro resistance.

  5. Stimulated emission of surface plasmons by electron tunneling in metal-barrier-metal structures

    Science.gov (United States)

    Siu, D. P.; Gustafson, T. K.

    1978-01-01

    It is shown that correlation currents arising from the superposition of pairs of states on distinct sides of a potential barrier in metal-barrier-metal structures can result in inelastic tunneling through the emission of surface plasmons. Net gain of an externally excited plasmon field is possible.

  6. Silicon Tunneling Field Effect Transistors with a Hemicylindrical Nanowire Channel for Ultra-Low Power Application

    Science.gov (United States)

    Park, Byung-Gook; Sun, Min-Chul; Kim, Sang Wan

    In order to decrease the threshold voltage while maintaining the OFF current low, reduction of the subthreshold swing is essential in field effect transistors (FETs). To reduce the subthreshold swing below 60 mV/decade, inter-band tunneling can be used for injection of carriers and the device that utilizes such a mechanism is tunneling field effect transistor (TFET). Silicon(Si) TFETs, which are favored due to their compatibility with currently dominant complementary metal-oxide-semiconductor (CMOS) technology, suffer from low ON current because of the relatively large bandgap of Si. The ON current of Si TFETs can be increased by field and area enhancement in a cylindrical nanowire channel. Numerical analysis has confirmed that the cylindrical channel structure shows significantly higher tunneling rate and wider tunneling area than the double gate structure. Si TFETs with a hemicylindrical nanowire channel are fabricated and characterized, and the effectiveness of nanowire channel approach is demonstrated.

  7. Ultrafast terahertz control of extreme tunnel currents through single atoms on a silicon surface

    DEFF Research Database (Denmark)

    Jelic, Vedran; Iwaszczuk, Krzysztof; Nguyen, Peter H.

    2017-01-01

    Ultrafast control of current on the atomic scale is essential for future innovations in nanoelectronics. Extremely localized transient electric fields on the nanoscale can be achieved by coupling picosecond duration terahertz pulses to metallic nanostructures. Here, we demonstrate terahertz...... scanning tunnelling microscopy (THz-STM) in ultrahigh vacuum as a new platform for exploring ultrafast non-equilibrium tunnelling dynamics with atomic precision. Extreme terahertz-pulse-driven tunnel currents up to 10(7) times larger than steady-state currents in conventional STM are used to image...... individual atoms on a silicon surface with 0.3nm spatial resolution. At terahertz frequencies, the metallic-like Si(111)-(7 x 7) surface is unable to screen the electric field from the bulk, resulting in a terahertz tunnel conductance that is fundamentally different than that of the steady state. Ultrafast...

  8. Silicon-germanium nanowire tunnel-FETs with homo- and heterostructure tunnel junctions

    Science.gov (United States)

    Richter, S.; Blaeser, S.; Knoll, L.; Trellenkamp, S.; Fox, A.; Schäfer, A.; Hartmann, J. M.; Zhao, Q. T.; Mantl, S.

    2014-08-01

    Experimental results on tunneling field-effect transistors (TFETs) based on strained SiGe on SOI nanowire arrays are presented. A heterostructure SiGe/Si TFET with a vertical tunnel junction consisting of an in situ doped SiGe source and a Si channel with a minimum inverse subthreshold slope of 90 mV/dec is demonstrated. An increase in tunneling area results in higher on-current. The in situ doped heterojunction TFET shows great improvement compared to a homojunction SiGe on SOI nanowire design with implanted junctions. Temperature dependent measurements and device simulations are performed in order to analyze the tunnel transport mechanism in the devices.

  9. BE-SONOS flash memory along with metal gate and high-k dielectrics in tunnel barrier and its impact on charge retention dynamics

    Science.gov (United States)

    Jain, Sonal; Gupta, Deepika; Neema, Vaibhav; Vishwakarma, Santosh

    2016-03-01

    We investigate the effect of a high-k dielectric in the tunnel layer to improve the erase speed-retention trade-off. Here, the proposed stack in the tunnel layer is AlLaO3/HfAlO/SiO2. These proposed materials possess low valence band offset with high permittivity to improve both the erase speed and retention time in barrier engineered silicon-oxide-nitride-oxide-silicon (BE-SONOS). In the proposed structure HfAlO and AlLaO3 replace Si3N4 and the top SiO2 layer in a conventional oxide/nitride/oxide (ONO) tunnel stack. Due to the lower conduction band offset (CBO) and high permittivity of the proposed material in the tunnel layer, it offers better program/erase (P/E) speed and retention time. In this work the gate length is also scaled down from 220 to 55 nm to observe the effect of high-k materials while scaling, for the same equivalent oxide thickness (EOT). We found that the scaling down of the gate length has a negligible impact on the memory window of the devices. Hence, various investigated tunnel oxide stacks possess a good memory window with a charge retained up to 87.4% (at room temperature) after a period of ten years. We also examine the use of a metal gate instead of a polysilicon gate, which shows improved P/E speed and retention time.

  10. BE-SONOS flash memory along with metal gate and high-k dielectrics in tunnel barrier and its impact on charge retention dynamics

    International Nuclear Information System (INIS)

    Jain, Sonal; Neema, Vaibhav; Gupta, Deepika; Vishwakarma, Santosh

    2016-01-01

    We investigate the effect of a high-k dielectric in the tunnel layer to improve the erase speed-retention trade-off. Here, the proposed stack in the tunnel layer is AlLaO 3 /HfAlO/SiO 2 . These proposed materials possess low valence band offset with high permittivity to improve both the erase speed and retention time in barrier engineered silicon-oxide-nitride-oxide-silicon (BE-SONOS). In the proposed structure HfAlO and AlLaO 3 replace Si 3 N 4 and the top SiO 2 layer in a conventional oxide/nitride/oxide (ONO) tunnel stack. Due to the lower conduction band offset (CBO) and high permittivity of the proposed material in the tunnel layer, it offers better program/erase (P/E) speed and retention time. In this work the gate length is also scaled down from 220 to 55 nm to observe the effect of high-k materials while scaling, for the same equivalent oxide thickness (EOT). We found that the scaling down of the gate length has a negligible impact on the memory window of the devices. Hence, various investigated tunnel oxide stacks possess a good memory window with a charge retained up to 87.4% (at room temperature) after a period of ten years. We also examine the use of a metal gate instead of a polysilicon gate, which shows improved P/E speed and retention time. (paper)

  11. Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Oberbeck, L.; Curson, N.J.; Hallam, T.; Simmons, M.Y.; Bilger, G.; Clark, R.G.

    2004-01-01

    In order to fabricate precise atomic-scale devices in silicon using a combination of scanning tunneling microscopy (STM) to position dopant atoms and molecular beam epitaxy to encapsulate the dopants it is necessary to minimize the segregation/diffusion of dopant atoms during silicon encapsulation. We characterize the surface segregation/diffusion of phosphorus atoms from a δ-doped layer in silicon after encapsulation at 250 deg. C and room temperature using secondary ion mass spectrometry (SIMS) and STM. We show that the surface phosphorus density can be reduced to a few percent of the initial δ-doped density if the phosphorus atoms are encapsulated with 5 monolayers of epitaxial silicon at room temperature. We highlight the limitations of SIMS to determine phosphorus segregation at the atomic scale and the advantage of using STM directly

  12. Enhanced tunnel magnetoresistance in a spinel oxide barrier with cation-site disorder

    Science.gov (United States)

    Sukegawa, Hiroaki; Miura, Yoshio; Muramoto, Shingo; Mitani, Seiji; Niizeki, Tomohiko; Ohkubo, Tadakatsu; Abe, Kazutaka; Shirai, Masafumi; Inomata, Koichiro; Hono, Kazuhiro

    2012-11-01

    We report enhanced tunnel magnetoresistance (TMR) ratios of 188% (308%) at room temperature and 328% (479%) at 15 K for cation-site-disordered MgAl2O4-barrier magnetic tunnel junctions (MTJs) with Fe (Fe0.5Co0.5 alloy) electrodes, which exceed the TMR ratios theoretically calculated and experimentally observed for ordered spinel barriers. The enhancement of TMR ratios is attributed to the suppression of the so-called band-folding effect in ordered spinel MTJs [Phys. Rev. BPRBMDO1098-012110.1103/PhysRevB.86.024426 86, 024426 (2012)]. First-principles calculations describe a dominant role of the oxygen sublattice for spin-dependent coherent tunneling, suggesting a mechanism of coherent tunneling occurring even in the disordered systems.

  13. Dependence of the Josephson coupling of unconventional superconductors on the properties of the tunneling barrier

    International Nuclear Information System (INIS)

    Ledvij, M.; Klemm, R.A.

    1994-01-01

    The Josephson coupling between a conventional and an unconventional superconductor is investigated as a function of the properties of the tunneling barrier. A simple model is adopted for the tunneling probability and it is shown that its variation dramatically affects the I c R n product of an s-d, as opposed to an s-s junction. Based on these conclusions, experiments are proposed to probe the symmetry of the order parameter in high temperature superconductors

  14. Spectroscopic, topological, and electronic characterization of ultrathin a-CdTe:O tunnel barriers

    International Nuclear Information System (INIS)

    Dolog, Ivan; Mallik, Robert R.; Malz, Dan; Mozynski, Anthony

    2004-01-01

    Ultrathin oxygenated amorphous CdTe (a-CdTe:O) films are prepared by rf sputtering of CdTe in a background of argon or argon/nitrogen/oxygen mixtures. Atomic force microscopy (AFM) is used to characterize the films and shows that they have an island structure typical of most sputtered thin films. However, when sufficiently low powers and deposition rates are employed during sputtering, the resulting films are remarkably smooth and sufficiently thin for use as barrier layers in inelastic electron tunneling (IET) junctions. Four terminal current-voltage data are recorded for Al/a-CdTe:O/Pb tunnel junctions and conductance-voltage curves are derived numerically. WKB fits to the conductance-voltage curves are obtained using a two-component trapezoidal plus square (TRAPSQR) model barrier potential to determine values for the tunnel barrier parameters (height, shape, and width); these parameters are consistent with AFM topological measurements and values from similar devices reported in the literature. IET spectra are presented which confirm that electrons tunnel through ultrathin regions of the a-CdTe:O films, which contain aluminum oxide subregions in a manner consistent with the TRAPSQR barrier model. Because tunneling occurs predominantly through these ultrathin regions, IET spectroscopic data obtained are representative of states at, or within a few tenths of nanometers from, the surface and confirm that the a-CdTe:O surface stoichiometry is very sensitive to changes in the argon/oxygen/nitrogen concentration ratios during film growth. Full IET spectra, current-voltage, and conductance-voltage data are presented together with tunnel barrier parameters derived from (WKB) fits to the data. The results presented here indicate that inelastic electron tunneling spectroscopy is a useful tool for characterizing the surface states of a-CdTe:O and possibly other photovoltaic materials

  15. RF-sputter-deposited magnesium oxide films as high-quality adjustable tunnel barriers

    International Nuclear Information System (INIS)

    Villegier, J.C.; Radparvar, M.; Yu, L.S.; Faris, S.M.

    1989-01-01

    High quality RF-sputtered MgO films are used as tunnel barriers to fabricate small area, niobium nitride Josephson tunnel junctions. A magnesium oxide barrier deposited as a single layer, or as a multilayer film, results in devices with similar characteristics. Annealing trilayers at temperatures in excess of 250 0 C for several hours decrease junction current density and improve device quality presumably by increasing barrier heights through reducing resonant tunneling states. A self-aligned process utilizing only two mask levels is used to produce junctions as small as 0.5 μm/sup 2/ with excellent critical current uniformity. These junctions exhibit energy gaps of 5.1 mV and low subgap currents at current densities in excess of 1000 A/cm/sup 2/ which make them suitable for a variety of applications such as SIS mixers and logic circuits

  16. Nonvolatile-memory characteristics of SiC nanocrystals with variable oxide thickness and crested tunnel barriers.

    Science.gov (United States)

    Han, Dong Seok; Lee, Dong Uk; Lee, Hyo Jun; Kim, Eun Kyu; You, Hee-Wook; Cho, Won-Ju

    2011-07-01

    The electrical characteristics of SiC nanocrystal nonvolatile-memory devices with variable oxide and crested tunnel barriers consisting of a SiO2/Si3N4/SiO2 (ONO) and a Si3N4/SiO2/Si3N4 (NON) layer, respectively, were investigated. The equivalent oxide thickness of the ONO and NON tunnel barriers were about 5.6 nm and 5.2 nm, respectively. When the +/- 13 V bias voltage was applied for 500 ms, the threshold voltage shifts of the SiC-nanocrystal-embedded memory devices with ONO and NON tunnel barriers were about 2.4 V. The operation speeds of the memories with ONO and NON tunnel barriers under the +/- 10 V applied pulse bias were approximately 5 and 20 ms, respectively. The field sensitivity of the ONO tunnel barrier was higher than that of the NON tunnel barrier during electron injection. The tunneling efficiency during the programming/erasing processes could be improved by the engineered tunnel barrier layer. Therefore, the SiC-nanocrystal-embedded memory device with an ONO tunnel barrier can be applied to nonvolatile-memory devices.

  17. Charged particle discrimination with silicon surface barrier detectors

    International Nuclear Information System (INIS)

    Coote, G.E.; Pithie, J.; Vickridge, I.C.

    1996-01-01

    The application for materials analysis of nuclear reactions that give rise to charged particles is a powerful surface analytical and concentration depth profiling technique. Spectra of charged particles, with energies in the range 0.1 to 15 MeV, emitted from materials irradiated with beams of light nuclei such as deuterons are measured with silicon surface barrier detectors. The spectra from multi-elemental materials typically encountered in materials research are usually composed of an overlapping superposition of proton, alpha, and other charged particle spectra. Interpretation of such complex spectra would be simplified if a means were available to electronically discriminate between the detector response to the different kinds of charged particle. We have investigated two methods of discriminating between different types of charged particles. The fast charge pulses from a surface barrier detector have different shapes, depending on the spatial distribution of energy deposition of the incident particle. Fast digitisation of the pulses, followed by digital signal processing provides one avenue for discrimination. A second approach is to use a thin transmission detector in front of a thick detector as a detector telescope. For a given incident energy, different types of charged particles will lose different amounts of energy in the thin detector, providing an alternative means of discrimination. We show that both approaches can provide significant simplification in the interpretation of charged particle spectra in practical situations, and suggest that silicon surface barrier detectors having graded electronic properties could provide improved discrimination compared to the current generation of detectors having homogeneous electronic properties. (author).12 refs., 2 tabs., 28 figs

  18. Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors.

    Science.gov (United States)

    Vaziri, S; Belete, M; Dentoni Litta, E; Smith, A D; Lupina, G; Lemme, M C; Östling, M

    2015-08-14

    Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in the literature for applications in electronics and optoelectronics. In this work, the carrier transport mechanisms in semiconductor-insulator-graphene (SIG) capacitors are investigated with respect to their suitability as electron emitters in vertical graphene base transistors (GBTs). Several dielectric materials as tunnel barriers are compared, including dielectric double layers. Using bilayer dielectrics, we experimentally demonstrate significant improvements in the electron injection current by promoting Fowler-Nordheim tunneling (FNT) and step tunneling (ST) while suppressing defect mediated carrier transport. High injected tunneling current densities approaching 10(3) A cm(-2) (limited by series resistance), and excellent current-voltage nonlinearity and asymmetry are achieved using a 1 nm thick high quality dielectric, thulium silicate (TmSiO), as the first insulator layer, and titanium dioxide (TiO2) as a high electron affinity second layer insulator. We also confirm the feasibility and effectiveness of our approach in a full GBT structure which shows dramatic improvement in the collector on-state current density with respect to the previously reported GBTs. The device design and the fabrication scheme have been selected with future CMOS process compatibility in mind. This work proposes a bilayer tunnel barrier approach as a promising candidate to be used in high performance vertical graphene-based tunneling devices.

  19. Electrical Characteristics of WSi2 Nanocrystal Capacitors with Barrier-Engineered High-k Tunnel Layers

    Science.gov (United States)

    Lee, Hyo Jun; Lee, Dong Uk; Kim, Eun Kyu; You, Hee-Wook; Cho, Won-Ju

    2011-06-01

    Nanocrystal-floating gate capacitors with WSi2 nanocrystals and high-k tunnel layers were fabricated to improve the electrical properties such as retention, programming/erasing speed, and endurance. The WSi2 nanocrystals were distributed uniformly between the tunnel and control gate oxide layers. The electrical performance of the tunnel barrier with the SiO2/HfO2/Al2O3 (2/1/3 nm) (OHA) tunnel layer appeared to be better than that with the Al2O3/HfO2/Al2O3 (2/1/3 nm) (AHA) tunnel layer. When ΔVFB is about 1 V after applying voltage at ±8 V, the programming/erasing speeds of AHA and OHA tunnel layers are 300 ms and 500 µs, respectively. In particular, the device with WSi2 nanocrystals and the OHA tunnel barrier showed a large memory window of about 7.76 V when the voltage swept from 10 to -10 V, and it was maintained at about 2.77 V after 104 cycles.

  20. Scanning tunneling microscope stimulated oxidation of silicon (100) surfaces

    Science.gov (United States)

    Fay, P.; Brockenbrough, R. T.; Abeln, G.; Scott, P.; Agarwala, S.; Adesida, I.; Lyding, J. W.

    1994-06-01

    The chemical modification of n- and p-type hydrogen-passivated Si(100) surfaces by a scanning tunneling microscope (STM) is reported. The modified areas have been examined with STM, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Comparison of these characterization techniques indicates the features are both chemical and topographic in nature and are the result of local oxidation of the substrate. In addition, pattern transfer for the defined regions has been demonstrated with both thermal oxidation and HBr reactive-ion etching.

  1. Macroscopic quantum tunneling of a Bose-Einstein condensate through double Gaussian barriers

    Science.gov (United States)

    Maeda, Kenji; Urban, Gregor; Weidemüller, Matthias; Carr, Lincoln D.

    2015-05-01

    Macroscopic quantum tunneling is one of the great manifestations of quantum physics, not only showing passage through a potential barrier but also emerging in a many-body wave function. We study a quasi-1D Bose-Einstein condensate of Lithium, confined by two Gaussian barriers, and show that in an experimentally realistic potential tens of thousands of atoms tunnel on time scales of 10 to 100 ms. Using a combination of variational and WKB approximations based on the Gross-Pitaevskii or nonlinear Schrödinger equation, we show that many unusual tunneling features appear due to the nonlinearity, including the number of trapped atoms exhibiting non-exponential decay, severe distortion of the barriers by the mean field, and even formation of a triple barrier in certain regimes. In the first 10ms, nonlinear many-body effects make the tunneling rates significantly larger than background loss rates, from 10 to 70 Hz. Thus we conclude that macroscopic quantum tunneling can be observed on experimental time scales. Funded by NSF, AFOSR, the Alexander von Humboldt foundation, and the Heidelberg Center for Quantum Dynamics.

  2. Noise Performance of Millimeter-wave Silicon Based Mixed Tunneling Avalanche Transit Time(MITATT) Diode

    OpenAIRE

    Aritra Acharyya; Moumita Mukherjee; J. P. Banerjee

    2010-01-01

    A generalized method for small-signal simulation of avalanche noise in Mixed Tunneling Avalanche Transit Time (MITATT) device is presented in this paper where the effect of series resistance is taken into account. The method is applied to a millimeter-wave Double Drift Region (DDR) MITATT device based on Silicon to obtain noise spectral density and noise measure as a function of frequency for different values of series resistance. It is found that noise measure of the dev...

  3. Strained silicon based complementary tunnel-FETs: Steep slope switches for energy efficient electronics

    Science.gov (United States)

    Knoll, L.; Richter, S.; Nichau, A.; Trellenkamp, S.; Schäfer, A.; Wirths, S.; Blaeser, S.; Buca, D.; Bourdelle, K. K.; Zhao, Q.-T.; Mantl, S.

    2014-08-01

    Electrical characteristics of silicon nanowire tunnel field effect transistors (TFETs) are presented and benchmarked versus other concepts. Particular emphasis is placed on the band to band tunneling (BTBT) junctions, the functional core of the device. Dopant segregation from ion implanted ultrathin silicide contacts is proved as a viable method to achieve steep tunneling junctions. This reduces defect generation by direct implantation into the junction and thus minimizes the risk of trap assisted tunneling. The method is applied to strained silicon, specifically to nanowire array transistors, enabling the realization of n-type and p-type TFETs with fairly high currents and complementary TFET inverters with sharp transitions and good static gain, even at very low drain voltages of VDD = 0.2 V. These achievements suggest a considerable potential of TFETs for ultralow power applications. Gate-all-around Si nanowire array p-type TFETs have been fabricated to demonstrate the impact of electrostatic control on the device performance. A high on-current of 78 μA/μm at VD = VG = 1.1 V is obtained.

  4. Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix

    Science.gov (United States)

    Forrest, Stephen R.

    2008-08-19

    A plurality of quantum dots each have a shell. The quantum dots are embedded in an organic matrix. At least the quantum dots and the organic matrix are photoconductive semiconductors. The shell of each quantum dot is arranged as a tunneling barrier to require a charge carrier (an electron or a hole) at a base of the tunneling barrier in the organic matrix to perform quantum mechanical tunneling to reach the respective quantum dot. A first quantum state in each quantum dot is between a lowest unoccupied molecular orbital (LUMO) and a highest occupied molecular orbital (HOMO) of the organic matrix. Wave functions of the first quantum state of the plurality of quantum dots may overlap to form an intermediate band.

  5. Dopant migration in silicon during implantation/annealing measured by scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Hessel, H.E.; Memmert, U.; Behm, R.J. (Univ. Muenchen (West Germany)); Cerva, H. (Siemens Research Lab., Muenchen (West Germany))

    In this paper spatial correlation between the lateral distribution of the doping type and the former implantation mask edge was investigated by scanning tunneling microscopy (STM) measurements. The position of the former mask edge was determined from surface steps resolved by STM topography measurements. Current imaging tunneling spectroscopy (CITS) data recorded simultaneously allowed to detect the transition from a high doping level with an ohmic I-V curve to a lower doping level displaying a Schottky barrier behavior. The influence of different annealing treatments on the position of this transition was investigated.

  6. Epitaxial aluminum nitride tunnel barriers grown by nitridation with a plasma source

    NARCIS (Netherlands)

    Zijlstra, T.; Lodewijk, C.F.J.; Vercruyssen, N.; Tichelaar, F.D.; Loudkov, D.N.; Klapwijk, T.M.

    2007-01-01

    High critical current-density (10?to?420?kA/cm2) superconductor-insulator-superconductor tunnel junctions with aluminum nitride barriers have been realized using a remote nitrogen plasma from an inductively coupled plasma source operated in a pressure range of 10?3–10?1?mbar. We find a much better

  7. Low Schottky Barrier Black Phosphorus Field-Effect Devices with Ferromagnetic Tunnel Contacts

    NARCIS (Netherlands)

    Kamalakar, M Venkata; Bettadahalli Nandishaiah, Madhushankar; Dankert, André; Dash, Saroj P

    2015-01-01

    Black phosphorus (BP) has been recently unveiled as a promising 2D direct bandgap semiconducting material. Here, ambipolar field-effect transistor behavior of nanolayers of BP with ferromagnetic tunnel contacts is reported. Using TiO2 /Co contacts, a reduced Schottky barrier <50 meV, which can be

  8. Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers

    Science.gov (United States)

    Wang, K.; Sanderink, J. G. M.; Bolhuis, T.; van der Wiel, W. G.; de Jong, M. P.

    2015-01-01

    A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the rotation of antiferromagnetic moments of an insulating CoO layer, incorporated into a tunnel junction consisting of sapphire(substrate)/fcc-Co/CoO/AlOx/Al. The ferromagnetic Co layer is exchange coupled to the AFM CoO layer and drives rotation of the AFM moments in an external magnetic field. The results may help pave the way towards the development of spintronic devices based on AFM insulators. PMID:26486931

  9. Effects of barrier fluctuation on the tunneling dynamics in the ...

    Indian Academy of Sciences (India)

    tic reorientations of a bridge unit or stochastically interrupted electronic pathway as in proteins [6]. So, the fluctuating barrier model can act as a good model for proton or H atom transfer dynamics in biomolecules or proteins where the protonic pathway contains a flipping molecular unit. Iwaniszewski studied the problem of.

  10. Tunneling conduction in dense silicon quantum dot/poly (methyl methacrylate) composites

    Energy Technology Data Exchange (ETDEWEB)

    Yu, D.; Liptak, R.W., E-mail: lipt0010@umn.edu; Aggarwal, G.; Cheng, A.-J.; Campbell, S.A.

    2013-01-01

    The conduction mechanism of organically passivated silicon quantum dots (SiQDs) embedded in Poly(methyl methacrylate) (PMMA) has been investigated. This architecture forces the charge carriers onto the QDs, eliminating the need for charge transfer between the host matrix PMMA and the SiQDs. Octene was determined to be the shortest aliphatic ligand for electroluminescent films, as mixtures of 5:1 SiQDs:PMMA were readily synthesized without precipitation. At low fields, the current is limited by space charge effects with a weak temperature dependence which is believed to be due to the quantum dot size distribution. The lack of a temperature dependence on the current–voltage characteristics in the high voltage regime suggests that trap assisted tunneling is the primary conduction mechanism rather than transport through the PMMA. An analysis of the results suggests that the tunneling effective mass in PMMA is approximately 0.23m{sub o}. Thus, preparing SiQDs in a PMMA matrix may yield a recombination pathway for generated excitons allowing for the creation of efficient light emitting devices. - Highlights: ► Achieved 72% loading of silicon quantum dots in Poly(methyl methacrylate) ► Demonstrated space charge limited current (SCLC) at low bias ► SCLC is due to “free” carriers, but exhibits a weak temperature dependence. ► At high field current is limited by trap assisted tunneling.

  11. Observation of a photoinduced, resonant tunneling effect in a carbon nanotube–silicon heterojunction

    Directory of Open Access Journals (Sweden)

    Carla Aramo

    2015-03-01

    Full Text Available A significant resonant tunneling effect has been observed under the 2.4 V junction threshold in a large area, carbon nanotube–silicon (CNT–Si heterojunction obtained by growing a continuous layer of multiwall carbon nanotubes on an n-doped silicon substrate. The multiwall carbon nanostructures were grown by a chemical vapor deposition (CVD technique on a 60 nm thick, silicon nitride layer, deposited on an n-type Si substrate. The heterojunction characteristics were intensively studied on different substrates, resulting in high photoresponsivity with a large reverse photocurrent plateau. In this paper, we report on the photoresponsivity characteristics of the device, the heterojunction threshold and the tunnel-like effect observed as a function of applied voltage and excitation wavelength. The experiments are performed in the near-ultraviolet to near-infrared wavelength range. The high conversion efficiency of light radiation into photoelectrons observed with the presented layout allows the device to be used as a large area photodetector with very low, intrinsic dark current and noise.

  12. Coaxial nanowire resonant tunneling diodes from non-polar AlN/GaN on silicon

    Science.gov (United States)

    Carnevale, S. D.; Marginean, C.; Phillips, P. J.; Kent, T. F.; Sarwar, A. T. M. G.; Mills, M. J.; Myers, R. C.

    2012-04-01

    Resonant tunneling diodes are formed using AlN/GaN core-shell nanowire heterostructures grown by plasma assisted molecular beam epitaxy on n-Si(111) substrates. By using a coaxial geometry, these devices take advantage of non-polar (m-plane) nanowire sidewalls. Device modeling predicts non-polar orientation should enhance resonant tunneling compared to a polar structure, and that AlN double barriers will lead to higher peak-to-valley current ratios compared to AlGaN barriers. Electrical measurements of ensembles of nanowires show negative differential resistance appearing only at cryogenic temperature. Individual nanowire measurements show negative differential resistance at room temperature with peak current density of 5 × 105 A/cm2.

  13. A graphene solution to conductivity mismatch: spin injection from ferromagnetic metal/graphene tunnel contacts into silicon

    Science.gov (United States)

    van't Erve, Olaf

    2014-03-01

    New paradigms for spin-based devices, such as spin-FETs and reconfigurable logic, have been proposed and modeled. These devices rely on electron spin being injected, transported, manipulated and detected in a semiconductor channel. This work is the first demonstration on how a single layer of graphene can be used as a low resistance tunnel barrier solution for electrical spin injection into Silicon at room temperature. We will show that a FM metal / monolayer graphene contact serves as a spin-polarized tunnel barrier which successfully circumvents the classic metal / semiconductor conductivity mismatch issue for electrical spin injection. We demonstrate electrical injection and detection of spin accumulation in Si above room temperature, and show that the corresponding spin lifetimes correlate with the Si carrier concentration, confirming that the spin accumulation measured occurs in the Si and not in interface trap states. An ideal tunnel barrier should exhibit several key material characteristics: a uniform and planar habit with well-controlled thickness, minimal defect / trapped charge density, a low resistance-area product for minimal power consumption, and compatibility with both the FM metal and semiconductor, insuring minimal diffusion to/from the surrounding materials at temperatures required for device processing. Graphene, offers all of the above, while preserving spin injection properties, making it a compelling solution to the conductivity mismatch for spin injection into Si. Although Graphene is very conductive in plane, it exhibits poor conductivity perpendicular to the plane. Its sp2 bonding results in a highly uniform, defect free layer, which is chemically inert, thermally robust, and essentially impervious to diffusion. The use of a single monolayer of graphene at the Si interface provides a much lower RA product than any film of an oxide thick enough to prevent pinholes (1 nm). Our results identify a new route to low resistance-area product spin

  14. Strained Silicon and Silicon-GermaniumNanowire Tunnel FETs and Inverters

    OpenAIRE

    Richter, Simon

    2014-01-01

    Reducing power consumption is an important issue for integrated circuits in portable devicesrelying on batteries and systems without external power supply. Scaling of the supply voltageVDD in integrated circuits is a powerful tool for reducing the power consumption, due to thequadratic dependence on VDD. MOSFETs, however, exhibit a fundamental limitation forthe drain current increase per applied gate voltage difference. The tunnel field-effect transistor(TFET) provides the ability for beating...

  15. Dysprosium disilicide nanostructures on silicon(001) studied by scanning tunneling microscopy and transmission electron microscopy

    International Nuclear Information System (INIS)

    Ye Gangfeng; Nogami, Jun; Crimp, Martin A.

    2006-01-01

    The microstructure of self-assembled dysprosium silicide nanostructures on silicon(001) has been studied by scanning tunneling microscopy and transmission electron microscopy. The studies focused on nanostructures that involve multiple atomic layers of the silicide. Cross-sectional high resolution transmission electron microscopy images and fast Fourier transform analysis showed that both hexagonal and orthorhombic/tetragonal silicide phases were present. Both the magnitude and the anisotropy of lattice mismatch between the silicide and the substrate play roles in the morphology and epitaxial growth of the nanostructures formed

  16. Tunneling in thin MOS structures

    Science.gov (United States)

    Maserjian, J.

    1974-01-01

    Recent results on tunneling in thin MOS structures are described. Thermally grown SiO2 films in the thickness range of 22-40 A have been shown to be effectively uniform on an atomic scale and exhibit an extremely abrupt oxide-silicon interface. Resonant reflections are observed at this interface for Fowler-Nordheim tunneling and are shown to agree with the exact theory for a trapezoidal barrier. Tunneling at lower fields is consistent with elastic tunneling into the silicon direct conduction band and, at still lower fields, inelastic tunneling into the indirect conduction band. Approximate dispersion relations are obtained over portions of the silicon-dioxide energy gap and conduction band.

  17. 1366 Direct Wafer: Demolishing the Cost Barrier for Silicon Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Adam [1366 Technologies

    2013-08-30

    The goal of 1366 Direct Wafer™ is to drastically reduce the cost of silicon-based PV by eliminating the cost barrier imposed by sawn wafers. The key characteristics of Direct Wafer are 1) kerf-free, 156-mm standard silicon wafers 2) high throughput for very low CAPEX and rapid scale up. Together, these characteristics will allow Direct Wafer™ to become the new standard for silicon PV wafers and will enable terawatt-scale PV – a prospect that may not be possible with sawn wafers. Our single, high-throughput step will replace the expensive and rate-limiting process steps of ingot casting and sawing, thereby enabling drastically lower wafer cost. This High-Impact PV Supply Chain project addressed the challenges of scaling Direct Wafer technology for cost-effective, high-throughput production of commercially viable 156 mm wafers. The Direct Wafer process is inherently simple and offers the potential for very low production cost, but to realize this, it is necessary to demonstrate production of wafers at high-throughput that meet customer specifications. At the start of the program, 1366 had demonstrated (with ARPA-E funding) increases in solar cell efficiency from 10% to 15.9% on small area (20cm2), scaling wafer size up to the industry standard 156mm, and demonstrated initial cell efficiency on larger wafers of 13.5%. During this program, the throughput of the Direct Wafer furnace was increased by more than 10X, simultaneous with quality improvements to meet early customer specifications. Dedicated equipment for laser trimming of wafers and measurement methods were developed to feedback key quality metrics to improve the process and equipment. Subsequent operations served both to determine key operating metrics affecting cost, as well as generating sample product that was used for developing downstream processing including texture and interaction with standard cell processing. Dramatic price drops for silicon wafers raised the bar significantly, but the

  18. Transmuscular Migration of a Scleral Tunnel-Secured Encircling Silicone Band

    Directory of Open Access Journals (Sweden)

    Yui Nishida

    2016-09-01

    Full Text Available The migration of an encircling silicone band through a rectus muscle is a rare postoperative complication associated with scleral buckling surgery for retinal detachment. In this present study, we describe what we believe to be the first reported case of a patient who experienced postoperative migration of an encircling silicone band through the rectus muscle, despite the band being surgically secured to the sclera in a scleral tunnel. A 58-year-old man presented with a rhegmatogenous retinal detachment in his left eye. Pars plana vitrectomy was performed with the placement of an encircling silicone band, and the patient’s retina was successfully reattached. One year postoperatively, the encircling band became exposed on the nasal side of the conjunctiva next to the limbus without any symptoms. Two weeks later, the exposed encircling band was surgically removed without any complications. The findings of this study show that even when an encircling silicone band is surgically secured around the eye, periodic and careful postoperative follow-up examinations should be performed to ensure no migration of the band.

  19. Blocking germanium diffusion inside silicon dioxide using a co-implanted silicon barrier

    Science.gov (United States)

    Barba, D.; Wang, C.; Nélis, A.; Terwagne, G.; Rosei, F.

    2018-04-01

    We investigate the effect of co-implanting a silicon sublayer on the thermal diffusion of germanium ions implanted into SiO2 and the growth of Ge nanocrystals (Ge-ncs). High-resolution imaging obtained by transmission electron microscopy and energy dispersive spectroscopy measurements supported by Monte-Carlo calculations shows that the Si-enriched region acts as a diffusion barrier for Ge atoms. This barrier prevents Ge outgassing during thermal annealing at 1100 °C. Both the localization and the reduced size of Ge-ncs formed within the sample region co-implanted with Si are observed, as well as the nucleation of mixed Ge/Si nanocrystals containing structural point defects and stacking faults. Although it was found that the Si co-implantation affects the crystallinity of the formed Ge-ncs, this technique can be implemented to produce size-selective and depth-ordered nanostructured systems by controlling the spatial distribution of diffusing Ge. We illustrate this feature for Ge-ncs embedded within a single SiO2 monolayer, whose diameters were gradually increased from 1 nm to 5 nm over a depth of 100 nm.

  20. A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio

    Directory of Open Access Journals (Sweden)

    Saeid Marjani

    2016-09-01

    Full Text Available In this paper, a silicon–on–insulator (SOI p–n–p–n tunneling field–effect transistor (TFET with a silicon doped hafnium oxide (Si:HfO2 ferroelectric gate stack is proposed and investigated via 2D device simulation with a calibrated nonlocal band–to–band tunneling model. Utilization of Si:HfO2 instead of conventional perovskite ferroelectrics such as lead zirconium titanate (PbZrTiO3 and strontium bismuth tantalate (SrBi2Ta2O9 provides compatibility to the CMOS process as well as improved device scalability. By using Si:HfO2 ferroelectric gate stack, the applied gate voltage is effectively amplified that causes increased electric field at the tunneling junction and reduced tunneling barrier width. Compared with the conventional p–n–p–n SOI TFET, the on–state current and switching state current ratio are appreciably increased; and the average subthreshold slope (SS is effectively reduced. The simulation results of Si:HfO2 ferroelectric p–n–p–n SOI TFET show significant improvement in transconductance (∼9.8X enhancement at high overdrive voltage and average subthreshold slope (∼35% enhancement over nine decades of drain current at room temperature, indicating that this device is a promising candidate to strengthen the performance of p–n–p–n and conventional TFET for a switching performance.

  1. Rotational barriers in ammonium hexachlorometallates as studied by NMR, tunneling spectroscopy and ab initio calculations

    DEFF Research Database (Denmark)

    Birczynski, A.; Lalowicz, Z.T.; Lodziana, Zbigniew

    2004-01-01

    potential barrier. It was also observed that TF correlates directly with the lattice constant of a particular compound. This correlation is explained by density-functional theory (DFT). The size of the unit cell is governed by the nature of metal-chlorine interaction, with respect to which the studied...... structure explain observed variation of the tunnelling frequencies for NH4+. The theory provides also M-Cl distances and barriers for C-2 and C-3 rotations of ammonium ions in respective compounds, which show good agreement with experimental values. (C) 2004 Elsevier B.V. All rights reserved....

  2. InSb Nanowires with Built-In GaxIn1-xSb Tunnel Barriers for Majorana Devices.

    Science.gov (United States)

    Car, Diana; Conesa-Boj, Sonia; Zhang, Hao; Op Het Veld, Roy L M; de Moor, Michiel W A; Fadaly, Elham M T; Gül, Önder; Kölling, Sebastian; Plissard, Sebastien R; Toresen, Vigdis; Wimmer, Michael T; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P; Bakkers, Erik P A M

    2017-02-08

    Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and high tunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP. We propose a material-oriented approach to engineer a sharp and narrow tunnel barrier by synthesizing a thin axial segment of Ga x In 1-x Sb within an InSb nanowire. By varying the precursor molar fraction and the growth time, we accurately control the composition and the length of the barriers. The height and the width of the Ga x In 1-x Sb tunnel barrier are extracted from the Wentzel-Kramers-Brillouin (WKB) fits to the experimental I-V traces.

  3. Complementary Barrier Infrared Detector (CBIRD) with Double Tunnel Junction Contact and Quantum Dot Barrier Infrared Detector (QD-BIRD)

    Science.gov (United States)

    Ting, David Z.-Y; Soibel, Alexander; Khoshakhlagh, Arezou; Keo, Sam A.; Nguyen, Jean; Hoglund, Linda; Mumolo, Jason M.; Liu, John K.; Rafol, Sir B.; Hill, Cory J.; hide

    2012-01-01

    The InAs/GaSb type-II superlattice based complementary barrier infrared detector (CBIRD) has already demonstrated very good performance in long-wavelength infrared (LWIR) detection. In this work, we describe results on a modified CBIRD device that incorporates a double tunnel junction contact designed for robust device and focal plane array processing. The new device also exhibited reduced turn-on voltage. We also report results on the quantum dot barrier infrared detector (QD-BIRD). By incorporating self-assembled InSb quantum dots into the InAsSb absorber of the standard nBn detector structure, the QD-BIRD extend the detector cutoff wavelength from approximately 4.2 micrometers to 6 micrometers, allowing the coverage of the mid-wavelength infrared (MWIR) transmission window. The device has been observed to show infrared response at 225 K.

  4. Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature

    International Nuclear Information System (INIS)

    Ohmori, Hideto; Hatori, Tomoya; Nakagawa, Shigeki

    2008-01-01

    MgO (100) textured films can be prepared by reactive facing targets sputtering at room temperature without postdeposition annealing process when they were deposited on (100) oriented Fe buffer layers. This method allows fabrication of perpendicular magnetic tunnel junction (p-MTJ) with MgO (100) tunneling barrier layer and rare-earth transition metal (RE-TM) alloy thin films as perpendicularly magnetized free and pinned layers. The 3-nm-thick MgO tunneling barrier layer in p-MTJ multilayer prepared on glass substrate revealed (100) crystalline orientation. Extraordinary Hall effect measurement clarified that the perpendicular magnetic components of 3-nm-thick Fe buffer layers on the two ends of MgO tunneling barrier layer were increased by exchange coupling with RE-TM alloy layers. The RA of 35 kΩ μm 2 and tunneling magnetoresistance ratio of 64% was observed in the multilayered p-MTJ element by current-in-plane-tunneling

  5. On the drain bias dependence of long-channel silicon-on-insulator-based tunnel field-effect transistors

    Science.gov (United States)

    Fukuda, Koichi; Mori, Takahiro; Asai, Hidehiro; Hattori, Junichi; Mizubayashi, Wataru; Morita, Yukinori; Fuketa, Hiroshi; Migita, Shinji; Ota, Hiroyuki; Masahara, Meishoku; Endo, Kazuhiko; Matsukawa, Takashi

    2017-04-01

    The drain bias dependence of tunnel field-effect transistors (TFETs) is examined on the basis of the measured characteristics and device simulation to understand the electrical behavior of TFETs. Our analyses focus on the long-channel silicon-on-insulator (SOI)-based TFETs as a good basis for further studies of short-channel effects, scaling issues, and more complicated device structures, such as multigate or nanowire TFETs. By device simulation, it is revealed that the drain bias dependence of the transfer characteristics of the measured TFETs is governed by two physical mechanisms: the density of states (DOS) occupancy factor, which depends on drain-to-source bias voltage, and channel electrostatic potential, which is limited by the drain bias through strong carrier accumulation. These mechanisms differ from the drain-induced barrier lowering (DIBL) of metal-oxide-semiconductor field-effect-transistors (MOSFETs), and cause a significant impact even in long-channel SOIs. Finally, the obtained insights are successfully implemented in a TFET compact model.

  6. Modeling of the I V characteristics of single and double barrier tunneling diodes using A k · p band model

    Science.gov (United States)

    Mui, D.; Patil, M.; Chen, J.; Agarwala, S.; Kumar, N. S.; Morkoc, H.

    1989-11-01

    We model the I-V characteristics of single and double barrier tunneling diodes using the complex band structure of the tunneling barrier obtained from a k · p band model. Band-bending is calculated by solving two coupled 1-D Poisson's equations with a classical potential in the accumulation region. The transfer matrix method is used for the calculation of the transmission probability of the tunneling electron whose complex k-vector is obtained from the band structure. An energy dependent density of states effective mass which is also calculated from the band structure is used. I-V characteristics for In 0.53Ga 0.47As/In 0.52Al 0.48As/In 0.53Ga 0.47As single and double barrier tunneling diodes obtained from this model agree quantitatively with experiment.

  7. Robust Environmental Barrier Coatings for Silicon Nitride, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Silicon based ceramics are the leading candidates for the high temperature structural components of the advanced propulsion engines. For such applications, one key...

  8. Degradation of magnetic tunnel junctions with thin AlOx barrier

    Directory of Open Access Journals (Sweden)

    Tadashi Mihara, Yoshinari Kamakura, Masato Morifuji and Kenji Taniguchi

    2007-01-01

    Full Text Available The degradation of magnetic tunnel junctions (MTJs with AlOx barrier was experimentally investigated. Constant voltage stress (CVS measurement was carried out to monitor the time evolution of the conductance and tunneling magnetoresistance (TMR of MTJs. The gradual increase of the stress-induced leakage current (SILC was observed prior to the breakdown, following a power law function of stress time with an exponent of about 0.2–0.4, which is similar to the case of the ultrathin gate oxide films in MOSFETs. The measured TMR for SILC suggests that the spin-dependent current component would be involved in the early stage of degradation, while spin-independent conduction becomes dominant before the breakdown resulting in a decrease of TMR.

  9. Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

    Energy Technology Data Exchange (ETDEWEB)

    Llobet, Jordi; Pérez-Murano, Francesc, E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Institut de Microelectrònica de Barcelona (IMB-CNM CSIC), Campus UAB, E-08193 Bellaterra, Catalonia (Spain); Krali, Emiljana; Wang, Chen; Jones, Mervyn E.; Durrani, Zahid A. K., E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Department of Electrical and Electronic Engineering, Imperial College London, South Kensington, London SW7 2AZ (United Kingdom); Arbiol, Jordi [Institució Catalana de Recerca i Estudis Avançats (ICREA) and Institut Català de Nanociència i Nanotecnologia (ICN2), Campus UAB, 08193 Bellaterra, Catalonia (Spain); CELLS-ALBA Synchrotron Light Facility, 08290 Cerdanyola, Catalonia (Spain)

    2015-11-30

    Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.

  10. Interfacial state and potential barrier height associated with grain boundaries in polycrystalline silicon

    International Nuclear Information System (INIS)

    Tsurekawa, Sadahiro; Kido, Kota; Watanabe, Tadao

    2007-01-01

    Importance of polycrystalline silicon has been recognized in the electronic device technology. The interfacial states in the band-gap and potential barrier associated with grain boundaries in polycrystalline silicon can exert their detrimental influence on electrical conductivity and then on device performance. However, all grain boundaries are not similarly potential sites for electrical activity because individual grain boundaries have their own character depending on the orientation relation between two adjoining grains. We apply the electron-beam-induced current technique and the Kelvin probe force microscopy to observe the carrier recombination intensity and the potential barrier height, respectively, at well-characterized grain boundaries in semiconductor-grade polycrystalline silicon. The results are compared with the previously observed ones in solar-grade silicon to examine the factors affecting electrical activity of grain boundaries

  11. Core-shell homojunction silicon vertical nanowire tunneling field-effect transistors

    Science.gov (United States)

    Yoon, Jun-Sik; Kim, Kihyun; Baek, Chang-Ki

    2017-01-01

    We propose three-terminal core-shell (CS) silicon vertical nanowire tunneling field-effect transistors (TFETs), which can be fabricated by conventional CMOS technology. CS TFETs show lower subthreshold swing (SS) and higher on-state current than conventional TFETs through their high surface-to-volume ratio, which increases carrier-tunneling region with no additional device area. The on-state current can be enhanced by increasing the nanowire height, decreasing equivalent oxide thickness (EOT) or creating a nanowire array. The off-state current is also manageable for power saving through selective epitaxial growth at the top-side nanowire region. CS TFETs with an EOT of 0.8 nm and an aspect ratio of 20 for the core nanowire region provide the largest drain current ranges with point SS values below 60 mV/dec and superior on/off current ratio under all operation voltages of 0.5, 0.7, and 1.0 V. These devices are promising for low-power applications at low fabrication cost and high device density. PMID:28112273

  12. Core-shell homojunction silicon vertical nanowire tunneling field-effect transistors

    Science.gov (United States)

    Yoon, Jun-Sik; Kim, Kihyun; Baek, Chang-Ki

    2017-01-01

    We propose three-terminal core-shell (CS) silicon vertical nanowire tunneling field-effect transistors (TFETs), which can be fabricated by conventional CMOS technology. CS TFETs show lower subthreshold swing (SS) and higher on-state current than conventional TFETs through their high surface-to-volume ratio, which increases carrier-tunneling region with no additional device area. The on-state current can be enhanced by increasing the nanowire height, decreasing equivalent oxide thickness (EOT) or creating a nanowire array. The off-state current is also manageable for power saving through selective epitaxial growth at the top-side nanowire region. CS TFETs with an EOT of 0.8 nm and an aspect ratio of 20 for the core nanowire region provide the largest drain current ranges with point SS values below 60 mV/dec and superior on/off current ratio under all operation voltages of 0.5, 0.7, and 1.0 V. These devices are promising for low-power applications at low fabrication cost and high device density.

  13. Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Chatbouri, S., E-mail: Samir.chatbouri@yahoo.com; Troudi, M.; Sghaier, N.; Kalboussi, A. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Aimez, V. [Université de Sherbrooke, Laboratoire Nanotechnologies et Nanosystémes (UMI-LN2 3463), Université de Sherbrooke—CNRS—INSA de Lyon-ECL-UJF-CPE Lyon, Institut Interdisciplinaire d’Innovation Technologique (Canada); Drouin, D. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Souifi, A. [Institut des Nanotechnologies de Lyon—site INSA de Lyon, UMR CNRS 5270 (France)

    2016-09-15

    In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO{sub x} = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.

  14. Nonlinear properties of double and triple barrier resonant tunneling structures in the sub-THz range

    International Nuclear Information System (INIS)

    Karuzskij, A.L.; Perestoronin, A.V.; Volchkov, N.A.

    2012-01-01

    The high-frequency nonlinear properties of GaAs/AlAs resonant tunneling diode (RTD) nanostructures and perspectives of implementation of the quantum regime of amplification in such structures, which is especially efficient in the range of sub-THz and THz ranges, are investigated. It is shown that in a triple barrier RTD the symmetry between the processes of amplification and dissipation can be avoided because of the interaction of an electromagnetic wave with both of resonant states in two quantum wells, that results in the significant growth of an RTD efficiency [ru

  15. Spin polarization of tunneling current in barriers with spin-orbit coupling.

    Science.gov (United States)

    Fujita, T; Jalil, M B A; Tan, S G

    2008-03-19

    We present a general method for evaluating the maximum transmitted spin polarization and optimal spin axis for an arbitrary spin-orbit coupling (SOC) barrier system, in which the spins lie in the azimuthal plane and finite spin polarization is achieved by wavevector filtering of electrons. Besides momentum filtering, another prerequisite for finite spin polarization is asymmetric occupation or transmission probabilities of the eigenstates of the SOC Hamiltonian. This is achieved most efficiently by resonant tunneling through multiple SOC barriers. We apply our analysis to common SOC mechanisms in semiconductors: pure bulk Dresselhaus SOC, heterostructures with mixed Dresselhaus and Rashba SOC and strain-induced SOC. In particular, we find that the interplay between Dresselhaus and Rashba SOC effects can yield several advantageous features for spin filter and spin injector functions, such as increased robustness to wavevector spread of electrons.

  16. Spin polarization of tunneling current in barriers with spin-orbit coupling

    International Nuclear Information System (INIS)

    Fujita, T; Jalil, M B A; Tan, S G

    2008-01-01

    We present a general method for evaluating the maximum transmitted spin polarization and optimal spin axis for an arbitrary spin-orbit coupling (SOC) barrier system, in which the spins lie in the azimuthal plane and finite spin polarization is achieved by wavevector filtering of electrons. Besides momentum filtering, another prerequisite for finite spin polarization is asymmetric occupation or transmission probabilities of the eigenstates of the SOC Hamiltonian. This is achieved most efficiently by resonant tunneling through multiple SOC barriers. We apply our analysis to common SOC mechanisms in semiconductors: pure bulk Dresselhaus SOC, heterostructures with mixed Dresselhaus and Rashba SOC and strain-induced SOC. In particular, we find that the interplay between Dresselhaus and Rashba SOC effects can yield several advantageous features for spin filter and spin injector functions, such as increased robustness to wavevector spread of electrons

  17. Current oscillations in Schottky-barrier CNTFET: towards resonant tunneling device operation

    Science.gov (United States)

    Shaker, Ahmed; Ossaimee, Mahmoud

    2018-03-01

    In this work, it has been shown that current oscillations could be enhanced in Schottky-barrier carbon nanotube FET (SB-CNFET) particularly at the low drain voltage and small channel lengths. This oscillatory dependence on the gate voltage brings out negative differential transconductance regions. We have simulated the SB-CNTFET using a 2D quantum simulator by solving NEGF and Poisson’s equation self-consistently. A parabolic potential well profile between double barriers is formed along the transport direction of the channel which is responsible for these oscillations. Key factors that affect the current oscillations are thoroughly investigated such as drain voltage, channel length, CNT diameter, the dielectric constant of the gate oxide and temperature. The results of this work pave a way to shed light on the feasibility and enhancement of SB-CNTFET as a resonant tunneling device.

  18. Spin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctions

    KAUST Repository

    Useinov, Arthur

    2011-10-01

    Spin-polarization asymmetry is the key parameter in asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) in magnetic tunnel junctions. In this paper, we study the value of the TMR as a function of the applied voltage Va in the single as well as double barrier magnetic tunnel junctions (SMTJ & DMTJ, which are constructed from CoFeB/MgO interfaces) and numerically estimate the possible difference of the TMR-V a curves for negative and positive voltages in the homojunctions. As a result, we found that AVB may help to determine the exact values of Fermi wave vectors for minority and majority conducting spin sub-bands. Moreover, significant asymmetry of the experimental TMR-Va curves, which arises due to different annealing regimes, is explained by different heights of the tunnel barriers and values of the spin asymmetry. The numerical TMR-V a data are in good agreement with experimental ones. © 2011 IEEE.

  19. Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element.

    Science.gov (United States)

    Lόpez-Mir, L; Frontera, C; Aramberri, H; Bouzehouane, K; Cisneros-Fernández, J; Bozzo, B; Balcells, L; Martínez, B

    2018-01-16

    Multiple spin functionalities are probed on Pt/La 2 Co 0.8 Mn 1.2 O 6 /Nb:SrTiO 3 , a device composed by a ferromagnetic insulating barrier sandwiched between non-magnetic electrodes. Uniquely, La 2 Co 0.8 Mn 1.2 O 6 thin films present strong perpendicular magnetic anisotropy of magnetocrystalline origin, property of major interest for spintronics. The junction has an estimated spin-filtering efficiency of 99.7% and tunneling anisotropic magnetoresistance (TAMR) values up to 30% at low temperatures. This remarkable angular dependence of the magnetoresistance is associated with the magnetic anisotropy whose origin lies in the large spin-orbit interaction of Co 2+ which is additionally tuned by the strain of the crystal lattice. Furthermore, we found that the junction can operate as an electrically readable magnetic memory device. The findings of this work demonstrate that a single ferromagnetic insulating barrier with strong magnetocrystalline anisotropy is sufficient for realizing sensor and memory functionalities in a tunneling device based on TAMR.

  20. Designing low permeability, optical-grade silicone systems: guidelines for choosing a silicone based on transmission rates for barrier applications

    Science.gov (United States)

    Velderrain, Michelle

    2012-03-01

    Unprotected electronic components exposed to moisture from high humidity may fail due to corrosion of metal leads or other unfavorable reactions on chemically sensitive components. This is of high interest for silicones that encapsulate Light Emitting Diodes (LEDs) dies. For these applications, moisture and oxygen may react with materials, such as phosphor, used to make white LEDs for back-lighting applications and decrease or change the light output and color over time. Of the polymeric adhesives and sealants commercially available, silicones are used for their thermal stability, clarity, and comparably low modulus that provides stress relief during thermal cycling. In addition, silicones are also known to be very permeable to low molecular weight gases such as water vapor and oxygen. Recently, several types of silicones were tested for the oxygen and water vapor transmission rates, and it was found that they can have drastically different results. Silicone properties strongly affecting permeability are polymer backbone chemistry, crosslink density and fillers. Phenyl (C6H5) and trifluoropropyl (CF3CH2) groups are used to optimize the refractive index of optically clear silicones. The effect of chemical composition on the water vapor transfer rate (WVTR) and the oxygen transfer rate (OTR) at 400 C and 90% Relative Humidity was investigated on several silicones with various refractive indices and compared to polydimethylsiloxane (PDMS) with similar durometers. It was found that polymer backbone chemistry had a significant influence on the permeation rates and will assist in material selection when designing for low-permeable barriers to improve package reliability.

  1. A novel cell exclusion zone assay with a barrier made from room temperature vulcanizing silicone rubber.

    Directory of Open Access Journals (Sweden)

    Yusuke Shiode

    Full Text Available To examine the usefulness of room temperature vulcanizing (RTV silicone rubber as a barrier material for cell exclusion zone assays.We created barriers using three types of RTV silicone rubber with differing viscosities. We then assessed the adherence of these barriers to culture dishes and their ease of removal from the dishes. We tested the effect of the newly created barriers on the extracellular matrix (ECM protein fibronectin by attaching and then removing them from fibronectin-coated culture dishes. We also conducted cell exclusion zone assays with MIO-M1 cells using this new barrier in order to measure cell migration. We used real time reverse transcription polymerase chain reaction (RT-PCR and immunohistochemical staining to measure the effect of fibronectin on MIO-M1 cell migration and the effect of migration (with fibronectin coating on basic fibroblast growth factor (bFGF expression in MIO-M1 cells.Of the three types of RTV silicon rubber tested, KE-3495-T was the best in terms of adherence to the dish and ease of removal from the dish. When barrier attachment and removal tests were performed, this rubber type did not have an effect on the fibronectin that coated the dish. In the cell exclusion assay, removal of the barrier revealed that a cell-free area with a distinct margin had been created, which allowed us to conduct a quantitative assessment of migration. Fibronectin significantly promoted the migration of MIO-M1 cells (P = 0.02. In addition, both real time RT-PCR and immunohistological staining indicated that bFGF expression in migrating MIO-M1 cells was significantly higher than that in non-migrating cells (P = 0.03.RTV silicone rubber can be used to create an effective barrier in cell exclusion zone assays and allows simple and low-cost multi-parametric analysis of cell migration.

  2. Study on the formation of current characteristics of a silicon photodiode with rectifying barriers

    Directory of Open Access Journals (Sweden)

    Karimov A. V.

    2013-02-01

    Full Text Available The article presents the results of studies on silicon photodiode double-barrier structure with back-to-back rectifying junctions «metal — semiconductor» in the photodiode and photovoltaic modes. Such structures are of interest for the development of input devices for weak optical signals.

  3. Ultrasmall silicon quantum dots

    NARCIS (Netherlands)

    Zwanenburg, F.A.; Van Loon, A.A.; Steele, G.A.; Rijmenam, C.E.W.M.; Balder, T.; Fang, Y.; Lieber, C.M.; Kouwenhoven, L.P.

    2009-01-01

    We report the realization of extremely small single quantum dots in p-type silicon nanowires, defined by Schottky tunnel barriers with Ni and NiSi contacts. Despite their ultrasmall size the NiSi–Si–NiSi nanowire quantum dots readily allow spectroscopy of at least ten consecutive holes, and

  4. Co2FeAl based magnetic tunnel junctions with BaO and MgO/BaO barriers

    Directory of Open Access Journals (Sweden)

    J. Rogge

    2015-07-01

    Full Text Available We succeed to integrate BaO as a tunneling barrier into Co2FeAl based magnetic tunnel junctions (MTJs. By means of Auger electron spectroscopy it could be proven that the applied annealing temperatures during BaO deposition and afterwards do not cause any diffusion of Ba neither into the lower Heusler compound lead nor into the upper Fe counter electrode. Nevertheless, a negative tunnel magnetoresistance (TMR ratio of -10% is found for Co2FeAl (24 nm / BaO (5 nm / Fe (7 nm MTJs, which can be attributed to the preparation procedure and can be explained by the formation of Co- and Fe-oxides at the interfaces between the Heusler and the crystalline BaO barrier by comparing with theory. Although an amorphous structure of the BaO barrier seems to be confirmed by high-resolution transmission electron microscopy (TEM, it cannot entirely be ruled out that this is an artifact of TEM sample preparation due to the sensitivity of BaO to moisture. By replacing the BaO tunneling barrier with an MgO/BaO double layer barrier, the electric stability could effectively be increased by a factor of five. The resulting TMR effect is found to be about +20% at room temperature, although a fully antiparallel state has not been realized.

  5. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    International Nuclear Information System (INIS)

    Reichel, Christian; Feldmann, Frank; Müller, Ralph; Hermle, Martin; Glunz, Stefan W.; Reedy, Robert C.; Lee, Benjamin G.; Young, David L.; Stradins, Paul

    2015-01-01

    Passivated contacts (poly-Si/SiO x /c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF 2 ), the ion implantation dose (5 × 10 14  cm −2 to 1 × 10 16  cm −2 ), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iV oc ) of 725 and 720 mV, respectively. For p-type passivated contacts, BF 2 implantations into intrinsic a-Si yield well passivated contacts and allow for iV oc of 690 mV, whereas implanted B gives poor passivation with iV oc of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved V oc of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF 2 implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with V oc of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts

  6. Multiple silicon nanowire complementary tunnel transistors for ultralow-power flexible logic applications

    Science.gov (United States)

    Lee, M.; Jeon, Y.; Jung, J.-C.; Koo, S.-M.; Kim, S.

    2012-06-01

    Based on experimental and simulation studies to gain insight into the suppression of ambipolar conduction in two distinct tunnel field-effect transistor (TFET) devices (that is, an asymmetric source-drain doping or a properly designed gate underlap), here we report on the fabrication and electrical/mechanical characterization of a flexible complementary TFET (c-TFET) inverter on a plastic substrate using multiple silicon nanowires (SiNWs) as the channel material. The static voltage transfer characteristic of the SiNW c-TFET inverter exhibits a full output voltage swing between 0 V and Vdd with a high voltage gain of ˜29 and a sharp transition of 0.28 V at Vdd = 3 V. A leakage power consumption of the SiNW c-TFET inverter in the standby state is as low as 17.1 pW for Vdd = 3 V. Moreover, its mechanical bendability indicates that it has good fatigue properties, providing an important step towards the realization of ultralow-power flexible logic circuits.

  7. Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

    Science.gov (United States)

    Clément, P.-Y.; Baraduc, C.; Ducruet, C.; Vila, L.; Chshiev, M.; Diény, B.

    2015-09-01

    Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated.

  8. Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Clément, P.-Y.; Baraduc, C.; Chshiev, M.; Diény, B.; Ducruet, C.; Vila, L.

    2015-01-01

    Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated

  9. Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Clément, P.-Y.; Baraduc, C., E-mail: claire.baraduc@cea.fr; Chshiev, M.; Diény, B. [Univ. Grenoble Alpes, INAC-SPINTEC, F-38000 Grenoble (France); CNRS, INAC-SPINTEC, F-38000 Grenoble (France); CEA, INAC-SPINTEC, F-38000 Grenoble (France); Ducruet, C. [Crocus-Technology, 5, Place Robert Schuman, F-38054 Grenoble (France); Vila, L. [Univ. Grenoble Alpes, INAC-SP2M, F-38000 Grenoble, France and CEA, INAC-SP2M, F-38000 Grenoble (France)

    2015-09-07

    Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated.

  10. Low Schottky barrier black phosphorus field-effect devices with ferromagnetic tunnel contacts.

    Science.gov (United States)

    Kamalakar, M Venkata; Madhushankar, B N; Dankert, André; Dash, Saroj P

    2015-05-13

    Black phosphorus (BP) has been recently unveiled as a promising 2D direct bandgap semiconducting material. Here, ambipolar field-effect transistor behavior of nanolayers of BP with ferromagnetic tunnel contacts is reported. Using TiO2/Co contacts, a reduced Schottky barrier transistor performance is achieved in the devices discussed here, with drain current modulation of four to six orders of magnitude and a mobility of μh ≈ 155 cm(2) V(-1) s(-1) for hole conduction at room temperature. Magnetoresistance calculations using a spin diffusion model reveal that the source-drain contact resistances in the BP device can be tuned by gate voltage to an optimal range for injection and detection of spin-polarized holes. The results of the study demonstrate the prospect of BP nanolayers for efficient nanoelectronic and spintronic devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Silicon, germanium, and III-V-based tunneling devices for low-power applications

    Science.gov (United States)

    Smith, Joshua T.

    While the scaling of transistor dimensions has kept pace with Moore's Law, the voltages applied to these devices have not scaled in tandem, giving rise to ever-increasing power/heating challenges in state-of-the-art integrated circuits. A primary reason for this scaling mismatch is due to the thermal limit---the 60 mV minimum required at room temperature to change the current through the device by one order of magnitude. This voltage scaling limitation is inherent in devices that rely on the mechanism of thermal emission of charge carriers over a gate-controlled barrier to transition between the ON- and OFF-states, such as in the case of conventional CMOS-based technologies. To overcome this voltage scaling barrier, several steep-slope device concepts have been pursued that have experimentally demonstrated sub-60-mV/decade operation since 2004, including the tunneling-field effect transistor (TFET), impact ionization metal-oxide-semiconductor (IMOS), suspended-gate FET (SG-FET), and ferroelectric FET (Fe-FET). These reports have excited strong efforts within the semiconductor research community toward the realization of a low-power device that will support continued scaling efforts, while alleviating the heating issues prevalent in modern computer chips. Literature is replete with claims of sub-60-mV/decade operation, but often with neglect to other voltage scaling factors that offset this result. Ideally, a low-power device should be able to attain sub-60-mV/decade inverse subthreshold slopes (S) employing low supply and gate voltages with a foreseeable path toward integration. This dissertation describes the experimental development and realization of CMOS-compatible processes to enhance tunneling efficiency in Si and Si/Ge nanowire (NW) TFETs for improved average S (S avg) and ON-currents (ION), and a novel, III-V-based tunneling device alternative is also proposed. After reviewing reported efforts on the TFET, IMOS, and SG-FET, the TFET is highlighted as the

  12. Characterization of the asymmetrical barrier potentials in CoFe/AlOx/Co magnetic tunneling junction by electron holography

    International Nuclear Information System (INIS)

    Xu, Q.Y.; Wang, Y.G.; Zhang, Z.; You, B.; Du, J.; Hu, A.

    2003-01-01

    Electron holography (EH) in a field emission gun transmission electron microscope has been used to profile the inner potential V 0 across CoFe/AlO x /Co magnetic tunneling junctions (MTJs). The spatial dimension of the AlO x barrier layer can be accurately determined from the phase profile at the tunneling junctions. The EH results show unambiguously that the potential jump across the CoFe/AlO x interface is smaller than that across the Co/AlO x interface, which results in asymmetrical barriers in the MTJs. The inner potential difference and the asymmetrical barrier were discussed based on the different oxidation statuses between Co/AlO x and CoFe/AlO x interfaces

  13. Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control

    Science.gov (United States)

    Hayakawa, Naoki; Muneta, Iriya; Ohashi, Takumi; Matsuura, Kentaro; Shimizu, Jun’ichi; Kakushima, Kuniyuki; Tsutsui, Kazuo; Wakabayashi, Hitoshi

    2018-04-01

    Molybdenum disulfide (MoS2) among two-dimensional semiconductor films is promising for spintronic devices because it has a longer spin-relaxation time with contrasting spin splitting than silicon. However, it is difficult to fabricate integrated circuits by the widely used exfoliation method. Here, we investigate the contact characteristics in the Fe/Al2O3/sputtered-MoS2 system with various thicknesses of the Al2O3 film. Current density increases with increasing thickness up to 2.5 nm because of both thermally-assisted and direct tunneling currents. On the other hand, it decreases with increasing thickness over 2.5 nm limited by direct tunneling currents. These results suggest that the Schottky barrier width can be controlled by changing thicknesses of the Al2O3 film, as supported by calculations. The reduction of conductance mismatch with this technique can lead to highly efficient spin injection from iron into the MoS2 film.

  14. Optimization of the tunnel magnetoresistance of CoFeB/ MgO/ CoFeB - based magnetic tunnel junctions (MTJs) with e-beam evaporation barriers

    Energy Technology Data Exchange (ETDEWEB)

    Zbarskyy, Vladyslav; Walter, Marvin; Eilers, Gerrit; Muenzenberg, Markus [I. Physikalisches Institut, Georg-August-Universitaet Goettingen, 37077 Goettingen (Germany); Peretzki, Patrick; Seibt, Michael [IV. Physikalisches Institut, Georg-August-Universitaet Goettingen, 37077 Goettingen (Germany)

    2010-07-01

    The investigation of MTJs with a high tunnel magnetoresistance (TMR) is very important for the production of MRAM devices. All our CoFeB layers are prepared via magnetron sputtering and MgO barriers via e-beam evaporation. We investigate the magnetic switching properties of CoFeB/MgO/CoFeB MTJs with measurements of hysteresis curves - using the magneto-optical Kerr effect - and TMR curves, optimizing the thickness of the CoFeB layers. Another parameter we change to optimize the ferromagnetic CoFeB electrodes is the annealing temperature. Both influence the solid state epitaxy leading to crystallization directly at the MgO/CoFeB interface. The optimization of MgO barrier properties is also necessary for the quality of our devices. In this context we study the TMR behaviour with the variation of the sample temperature during the e-beam evaporation of MgO barrier.

  15. Tunnel oxide passivated rear contact for large area n-type front junction silicon solar cells providing excellent carrier selectivity

    Directory of Open Access Journals (Sweden)

    Yuguo Tao

    2016-01-01

    Full Text Available Carrier-selective contact with low minority carrier recombination and efficient majority carrier transport is mandatory to eliminate metal-induced recombination for higher energy conversion efficiency for silicon (Si solar cells. In the present study, the carrier-selective contact consists of an ultra-thin tunnel oxide and a phosphorus-doped polycrystalline Si (poly-Si thin film formed by plasma enhanced chemical vapor deposition (PECVD and subsequent thermal crystallization. It is shown that the poly-Si film properties (doping level, crystallization and dopant activation anneal temperature are crucial for achieving excellent contact passivation quality. It is also demonstrated quantitatively that the tunnel oxide plays a critical role in this tunnel oxide passivated contact (TOPCON scheme to realize desired carrier selectivity. Presence of tunnel oxide increases the implied Voc (iVoc by ~ 125 mV. The iVoc value as high as 728 mV is achieved on symmetric structure with TOPCON on both sides. Large area (239 cm2 n-type Czochralski (Cz Si solar cells are fabricated with homogeneous implanted boron emitter and screen-printed contact on the front and TOPCON on the back, achieving 21.2% cell efficiency. Detailed analysis shows that the performance of these cells is mainly limited by boron emitter recombination on the front side.

  16. Electric field strength and plasma delay in silicon surface barrier detector

    International Nuclear Information System (INIS)

    Kanno, I.; Inbe, T.; Kanazawa, S.; Kimura, I.

    1994-01-01

    The resistivity change of a silicon irradiated by high energy neutrons became an interest of study associated with the large scale accelerator projects . The increase of the resistivity of the silicon of a silicon surface barrier detector (SSBD) was studied as a function of neutron fluence. The plasma delay, which was an interesting but not favorite timing property of the SSBD, was reported being dependent on the resistivity of silicon . The neutron irradiation brings the change of timing property as well as the resistivity change on the SSBD. The resistivity dependence of the plasma delay should be studied for the purpose of high energy accelerator experiments. Some empirical formulae of the plasma delay were reported, however, there were no discussions on the physical meanings of the resistivity dependence of the plasma delay. The plasma delay in a SSBD is discussed in the light of electric field strength in the depletion layer of the SSBD. The explanation of the plasma delay is presented taking into account of the competing two electric forces. The resistivity of the silicon affects the plasma delay through the electric forces. 3 figs, 3 refs. (author)

  17. Tunnel spin polarization versus energy for clean and doped Al2O3 barriers

    NARCIS (Netherlands)

    Park, B.G.; Banerjee, T.; Lodder, J.C.; Jansen, R.

    2007-01-01

    The variation of the tunnel spin-polarization (TSP) with energy is determined using a magnetic tunnel transistor, allowing quantification of the energy dependent TSP separately for both ferromagnet/insulator interfaces and direct correlation with the tunnel magnetoresistance (TMR) measured in the

  18. Tunnel Spin Polarization Versus Energy for Clean and Doped Al2O3 Barriers

    NARCIS (Netherlands)

    Park, B.G.; Banerjee, T.; Lodder, J.C.; Jansen, R.

    2007-01-01

    The variation of the tunnel spin-polarization (TSP) with energy is determined using a magnetic tunnel transistor, allowing quantification of the energy dependent TSP separately for both ferromagnet/insulator interfaces and direct correlation with the tunnel magnetoresistance (TMR) measured in the

  19. Spin-related tunneling through a nanostructured electric-magnetic barrier on the surface of a topological insulator.

    Science.gov (United States)

    Wu, Zhenhua; Li, Jun

    2012-01-27

    We investigate quantum tunneling through a single electric and/or magnetic barrier on the surface of a three-dimensional topological insulator. We found that (1) the propagating behavior of electrons in such system exhibits a strong dependence on the direction of the incident electron wavevector and incident energy, giving the possibility to construct a wave vector and/or energy filter; (2) the spin orientation can be tuned by changing the magnetic barrier structure as well as the incident angles and energies.PACS numbers: 72.25.Dc; 73.20.-r; 73.23.-b; 75.70.-i.

  20. Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals

    Science.gov (United States)

    Mishina, H.; Buckley, D. H.

    1984-01-01

    Friction experiments were conducted for the semiconductors silicon and gallium arsenide in contact with pure metals. Polycrystalline titanium, tantalum, nickel, palladium, and platinum were made to contact a single crystal silicon (111) surface. Indium, nickel, copper, and silver were made to contact a single crystal gallium arsenide (100) surface. Sliding was conducted both in room air and in a vacuum of 10 to the minus 9th power torr. The friction of semiconductors in contact with metals depended on a Schottky barrier height formed at the metal semiconductor interface. Metals with a higher barrier height on semiconductors gave lower friction. The effect of the barrier height on friction behavior for argon sputtered cleaned surfaces in vacuum was more specific than that for the surfaces containing films in room air. With a silicon surface sliding on titanium, many silicon particles back transferred. In contrast, a large quantity of indium transferred to the gallium arsenide surface.

  1. In silico simulations of tunneling barrier measurements for molecular orbital-mediated junctions: A molecular orbital theory approach to scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Terryn, Raymond J.; Sriraman, Krishnan; Olson, Joel A., E-mail: jolson@fit.edu; Baum, J. Clayton, E-mail: cbaum@fit.edu [Department of Chemistry, Florida Institute of Technology, 150 West University Boulevard, Melbourne, Florida 32901 (United States); Novak, Mark J. [Department of Chemistry and Applied Biological Sciences, South Dakota School of Mines and Technology, 501 E. Saint Joseph Street, Rapid City, South Dakota 57701 (United States)

    2016-09-15

    A new simulator for scanning tunneling microscopy (STM) is presented based on the linear combination of atomic orbitals molecular orbital (LCAO-MO) approximation for the effective tunneling Hamiltonian, which leads to the convolution integral when applied to the tip interaction with the sample. This approach intrinsically includes the structure of the STM tip. Through this mechanical emulation and the tip-inclusive convolution model, dI/dz images for molecular orbitals (which are closely associated with apparent barrier height, ϕ{sub ap}) are reported for the first time. For molecular adsorbates whose experimental topographic images correspond well to isolated-molecule quantum chemistry calculations, the simulator makes accurate predictions, as illustrated by various cases. Distortions in these images due to the tip are shown to be in accord with those observed experimentally and predicted by other ab initio considerations of tip structure. Simulations of the tunneling current dI/dz images are in strong agreement with experiment. The theoretical framework provides a solid foundation which may be applied to LCAO cluster models of adsorbate–substrate systems, and is extendable to emulate several aspects of functional STM operation.

  2. Reliability enhancement due to in-situ post-oxidation of sputtered MgO barrier in double MgO barrier magnetic tunnel junction

    Directory of Open Access Journals (Sweden)

    Chikako Yoshida

    2017-06-01

    Full Text Available We have investigated the effects of in-situ post-oxidation (PO of a sputtered MgO barrier in a double-MgO-barrier magnetic tunnel junction (MTJ and found that the short error rate was significantly reduced, the magnetoresistance (MR ratio was increased approximately 18%, and the endurance lifetime was extend. In addition, we found that the distribution of breakdown number (a measure of endurance exhibits trimodal characteristics, which indicates competition between extrinsic and intrinsic failures. This improvement in reliability might be related to the suppression of Fe and Co diffusion to the MgO barrier, as revealed by electron energy-loss spectroscopy (EELS analysis.

  3. Fabrication and characterization of surface barrier detector from commercial silicon substrate

    International Nuclear Information System (INIS)

    Silva, Julio Batista Rodrigues

    2016-01-01

    In this work it was developed radiation detectors silicon surface barrier that were capable of detecting the presence of gamma radiation from a low energy of iodine-125 seeds used in brachytherapy treatments. >From commercial silicon substrates detectors were developed, one sequence left of chemical treatments to the surfaces of these substrates with the intention of minimizing the possible noise generated, validation of the samples obtained as diodes, ensuring detector characteristics and effective use as detector for Iodine-125 radioactive sources with energy of about 25 keV and Americium-251 with energy on the order of 59 keV. Finished performing the analysis of the obtained energy spectra and so it was possible to observe the ability of these detectors to measure the energy from these seeds. (author)

  4. Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Oberbeck, Lars [Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); TOTAL Marketing Services, New Energies, La Défense 10, 92069 Paris La Défense Cedex (France); Reusch, Thilo C. G.; Hallam, Toby; Simmons, Michelle Y., E-mail: n.curson@ucl.ac.uk, E-mail: michelle.simmons@unsw.edu.au [Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Schofield, Steven R. [Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); London Centre for Nanotechnology, UCL, London WC1H 0AH (United Kingdom); Department of Physics and Astronomy, UCL, London WC1E 6BT (United Kingdom); Curson, Neil J., E-mail: n.curson@ucl.ac.uk, E-mail: michelle.simmons@unsw.edu.au [Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); London Centre for Nanotechnology, UCL, London WC1H 0AH (United Kingdom); Department of Electronic and Electrical Engineering, UCL, London WC1E 7JE (United Kingdom)

    2014-06-23

    We demonstrate the locating and imaging of single phosphorus atoms and phosphorus dopant nanostructures, buried beneath the Si(001) surface using scanning tunneling microscopy. The buried dopant nanostructures have been fabricated in a bottom-up approach using scanning tunneling microscope lithography on Si(001). We find that current imaging tunneling spectroscopy is suited to locate and image buried nanostructures at room temperature and with residual surface roughness present. From these studies, we can place an upper limit on the lateral diffusion during encapsulation with low-temperature Si molecular beam epitaxy.

  5. Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Oberbeck, Lars; Reusch, Thilo C. G.; Hallam, Toby; Simmons, Michelle Y.; Schofield, Steven R.; Curson, Neil J.

    2014-01-01

    We demonstrate the locating and imaging of single phosphorus atoms and phosphorus dopant nanostructures, buried beneath the Si(001) surface using scanning tunneling microscopy. The buried dopant nanostructures have been fabricated in a bottom-up approach using scanning tunneling microscope lithography on Si(001). We find that current imaging tunneling spectroscopy is suited to locate and image buried nanostructures at room temperature and with residual surface roughness present. From these studies, we can place an upper limit on the lateral diffusion during encapsulation with low-temperature Si molecular beam epitaxy.

  6. Direct measurement of free-energy barrier to nucleation of crystallites in amorphous silicon thin films

    Science.gov (United States)

    Shi, Frank G.

    1994-01-01

    A method is introduced to measure the free-energy barrier W(sup *), the activation energy, and activation entropy to nucleation of crystallites in amorphous solids, independent of the energy barrier to growth. The method allows one to determine the temperature dependence of W(sup *), and the effect of the preparation conditions of the initial amorphous phase, the dopants, and the crystallization methds on W(sup *). The method is applied to determine the free-energy barrier to nucleation of crystallites in amorphous silicon (a-Si) thin films. For thermally induced nucleation in a-Si thin films with annealing temperatures in the range of from 824 to 983 K, the free-energy barrier W(sup *) to nucleation of silicon crystals is about 2.0 - 2.1 eV regardless of the preparation conditions of the films. The observation supports the idea that a-Si transforms into an intermediate amorphous state through the structural relaxation prior to the onset of nucleation of crystallites in a-Si. The observation also indicates that the activation entropy may be an insignificant part of the free-energy barrier for the nucleation of crystallites in a-Si. Compared with the free-energy barrier to nucleation of crystallites in undoped a-Si films, a significant reduction is observed in the free-energy barrier to nucleation in Cu-doped a-Si films. For a-Si under irradiation of Xe(2+) at 10(exp 5) eV, the free-energy barrier to ion-induced nucleation of crystallites is shown to be about half of the value associated with thermal-induced nucleation of crystallites in a-Si under the otherwise same conditions, which is much more significant than previously expected. The present method has a general kinetic basis; it thus should be equally applicable to nucleation of crystallites in any amorphous elemental semiconductors and semiconductor alloys, metallic and polymeric glasses, and to nucleation of crystallites in melts and solutions.

  7. Study of Nickel Silicide as a Copper Diffusion Barrier in Monocrystalline Silicon Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Kale, Abhijit; Beese, Emily; Saenz, Theresa; Warren, Emily; Nemeth, William; Young, David; Marshall, Alexander; Florent, Karine; Kurinec, Santosh K.; Agarwal, Sumit; Stradins, Pauls

    2016-11-21

    NiSi as a conductive diffusion barrier to silicon has been studied. We demonstrate that the NiSi films formed using the single step annealing process are as good as the two step process using XRD and Raman. Quality of NiSi films formed using e-beam Ni and electroless Ni process has been compared. Incomplete surface coverage and presence of constituents other than Ni are the main challenges with electroless Ni. We also demonstrate that Cu reduces the thermal stability of NiSi films. The detection of Cu has proven to be difficult due to temperature limitations.

  8. Proton Transfer and Low-Barrier Hydrogen Bonding: a Shifting Vibrational Landscape Dictated by Large Amplitude Tunneling

    Science.gov (United States)

    Vealey, Zachary; Foguel, Lidor; Vaccaro, Patrick

    2017-06-01

    Our fundamental understanding of synergistic hydrogen-bonding and proton-transfer phenomena has been advanced immensely by studies of model systems in which the coherent transduction of hydrons is mediated by two degenerate equilibrium configurations that are isolated from one another by a potential barrier of substantial height. This topography advantageously affords unambiguous signatures for the underlying state-resolved dynamics in the form of tunneling-induced spectral bifurcations, the magnitudes of which encode both the overall efficacy and the detailed mechanism of the unimolecular transformation. As a prototypical member of this class of compounds, 6-hydroxy-2-formylfulvene (HFF) supports an unusual quasi-linear O-H...O \\leftrightarrow O...H-O reaction coordinate that presents a minimal impediment to proton migration - a situation commensurate with the concepts of low-barrier hydrogen bonding (which are characterized by great strength, short distance, and a vanishingly small barrier for hydron migration). A variety of fluorescence-based, laser-spectroscopic probes have been deployed in a cold supersonic free-jet expansion to explore the vibrational landscape and anomalously large tunneling-induced shifts that dominate the ˜{X}^{1}A_{1} potential-energy surface of HFF, thus revealing the most rapid proton tunneling ever reported for a molecular ground state (τ_{pt}≤120fs). The surprising efficiency of such tunneling-mediated processes stems from proximity of the zero-point level to the barrier crest and produces a dramatic alteration in the canonical pattern of vibrational features that reflects, in part, the subtle transition from quantum-mechanical barrier penetration to classical over-the-barrier dynamics. The ultrafast proton-transfer regime that characterizes the ˜{X}^{1}A_{1} manifold will be juxtaposed against analogous findings for the lowest-lying singlet excited state ˜{A}^{1}B_{2} (π*←π), where a marked change in the nature of the

  9. Quantum dots and tunnel barriers in InAs/InP nanowire heterostructures: Electronic and optical properties

    Science.gov (United States)

    Niquet, Yann-Michel; Mojica, Dulce Camacho

    2008-03-01

    We compute the structural and electronic properties of ⟨111⟩-oriented InAs/InP nanowire heterostructures using Keating’s valence force field and a tight-binding model. We focus on the optical properties (exciton energies and polarization) of InAs quantum dots embedded in InP nanowires and on the height of InP and InAsP tunnel barriers embedded in InAs nanowires. We show that InAs quantum dots exhibit bright optical transitions, at variance with the highly mismatched InAs/GaAs nanowire heterostructures. The polarization of the photons is perpendicular to the nanowire for thin InAs layers but rotates parallel to the nanowire for thick enough ones, as a result of the increasing light-hole character of the exciton. As for tunnel barriers, we show that the residual strains can significantly reduce the conduction band discontinuity in thin InAsP layers. This must be taken into account in the design of nanowire tunneling devices.

  10. Anisotropic Lithium Insertion Behavior in Silicon Nanowires: Binding Energy, Diffusion Barrier, and Strain Effect

    KAUST Repository

    Zhang, Qianfan

    2011-05-19

    Silicon nanowires (SiNWs) have recently been shown to be promising as high capacity lithium battery anodes. SiNWs can be grown with their long axis along several different crystallographic directions. Due to distinct atomic configuration and electronic structure of SiNWs with different axial orientations, their lithium insertion behavior could be different. This paper focuses on the characteristics of single Li defects, including binding energy, diffusion barriers, and dependence on uniaxial strain in [110], [100], [111], and [112] SiNWs. Our systematic ab initio study suggests that the Si-Li interaction is weaker when the Si-Li bond direction is aligned close to the SiNW long axis. This results in the [110] and [111] SiNWs having the highest and lowest Li binding energy, respectively, and it makes the diffusion barrier along the SiNW axis lower than other pathways. Under external strain, it was found that [110] and [001] SiNWs are the most and least sensitive, respectively. For diffusion along the axial direction, the barrier increases (decreases) under tension (compression). This feature results in a considerable difference in the magnitude of the energy barrier along different diffusion pathways. © 2011 American Chemical Society.

  11. Improved Water Barrier Properties of Calcium Alginate Capsules Modified by Silicone Oil

    Directory of Open Access Journals (Sweden)

    Brian G. Zukas

    2016-04-01

    Full Text Available Calcium alginate films generally offer poor diffusion resistance to water. In this study, we present a technique for encapsulating aqueous drops in a modified calcium alginate membrane made from an emulsion of silicone oil and aqueous alginate solution and explore its effect on the loss of water from the capsule cores. The capsule membrane storage modulus increases as the initial concentration of oil in the emulsion is increased. The water barrier properties of the fabricated capsules were determined by observing the mass loss of capsules in a controlled environment. It was found that capsules made with emulsions containing 50 wt% silicone oil were robust while taking at least twice the time to dry completely as compared to capsules made from only an aqueous alginate solution. The size of the oil droplets in the emulsion also has an effect on the water barrier properties of the fabricated capsules. This study demonstrates a facile method of producing aqueous core alginate capsules with a modified membrane that improves the diffusion resistance to water and can have a wide range of applications.

  12. Role of tunnelling in complete and incomplete fusion induced by 9Be on 169Tm and 187Re targets at around barrier energies

    Science.gov (United States)

    Kharab, Rajesh; Chahal, Rajiv; Kumar, Rajiv

    2017-04-01

    We have analyzed the complete and incomplete fusion excitation function for 9Be +169Tm, 187Re reactions at around barrier energies using the code PLATYPUS based on classical dynamical model. The quantum mechanical tunnelling correction is incorporated at near and sub barrier energies which significantly improves the matching between the data and prediction.

  13. Infinite dwell time and group delay in resonant electron tunneling through double complex potential barrier

    Science.gov (United States)

    Opacak, Nikola; Milanović, Vitomir; Radovanović, Jelena

    2017-12-01

    Tunneling times in complex potentials are investigated. Analytical expressions for dwell time, self-interference time and group delay are obtained for the case of complex double delta potentials. It is shown that we can always find a set of parameters of the potential so that the tunneling times achieve very large values and even approach infinity for the case of resonance. The phenomenon of infinite tunneling times occurs for only one particular positive value of the imaginary part of the potential, if all other parameters are given.

  14. A simple and controlled single electron transistor based on doping modulation in silicon nanowires

    OpenAIRE

    Hofheinz, M.; Jehl, X.; Sanquer, M.; Molas, G.; Vinet, M.; Deleonibus, S.

    2006-01-01

    A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel of the transistor is the Coulomb island at low temperature. Two silicon nitride spacers deposited on each side of the gate create a modulation of doping along the nanowire that creates tunnel barriers. Such barriers are fixed and controlled, like in metallic...

  15. Flexible semi-around gate silicon nanowire tunnel transistors with a sub-kT/q switch

    Science.gov (United States)

    Lee, Myeongwon; Jeon, Youngin; Kim, Minsuk; Kim, Sangsig

    2015-06-01

    Tunnel field-effect transistors (TFETs) with a subthreshold swing (SS) tunneling. In silicon (Si) channel materials, however, it still remains a challenge to obtain SS smaller than 60 mV/dec. In this study, we experimentally demonstrate the sub-60 mV/dec operation of a flexible semi-around gate TFET on a plastic substrate using Si nanowires (SiNWs) as the channel material. With the combined advantages of selectively thinned SiNW channels (width ˜ 15 nm and height ˜ 40 nm) and high-κ (Al2O3 ˜ 7 nm) gate dielectric, in conjunction with an abrupt degenerate source junction, the device with a channel length of ˜500 nm exhibits a minimal SS of ˜42 mV/dec at room temperature. Moreover, mechanical bendability of the device indicates that it has stable and good fatigue properties, providing an important step towards the realization of steep-slope switches for low-power and energy-efficient flexible electronics.

  16. Printing silicone-based hydrophobic barriers on paper for microfluidic assays using low-cost ink jet printers.

    Science.gov (United States)

    Rajendra, Vinodh; Sicard, Clémence; Brennan, John D; Brook, Michael A

    2014-12-21

    Paper-based microfluidic devices exhibit many advantages for biological assays. Normally, the assays are restricted to certain areas of the paper by hydrophobic barriers comprised of wax or alkyl ketene dimers (AKD). Neither hydrophobic barrier is able to constrain aqueous solutions of surfactants, which are frequently used in biological assays. We demonstrate that rapidly curing silicone resins can be inkjet printed onto pure cellulose paper using inexpensive thermal ink-jet printers. The Piers-Rubinsztajn (PR) reaction dominates the cure chemistry leading to cellulose fibers that are surface coated with a silicone resin. The resulting barriers are able to resist penetration by surfactant solutions and even by the lower surface energy solvents DMF and DMSO. The utility of the barrier was demonstrated using a coliform assay based on detection of β-galactosidase.

  17. Annealing Effect of Al2O3 Tunnel Barriers in HfO2-Based ReRAM Devices on Nonlinear Resistive Switching Characteristics.

    Science.gov (United States)

    Park, Sukhyung; Cho, Kyoungah; Jung, Jungwoo; Kim, Sangsig

    2015-10-01

    In this study, we demonstrate the enhancement of the nonlinear resistive switching characteristics of HfO2-based resistive random access memory (ReRAM) devices by carrying out thermal annealing of Al2O3 tunnel barriers. The nonlinearity of ReRAM device with an annealed Al2O3 tunnel barrier is determined to be 10.1, which is larger than that of the ReRAM device with an as-deposited Al2O3 tunnel barrier. From the electrical characteristics of the ReRAM devices with as-deposited and annealed Al2O3 tunnel barriers, it reveals that there is a trade-off relationship between nonlinearity in low-resistance state (LRS) current and the ratio of the high-resistance state (HRS) and the LRS. The enhancement of nonlinearity is attributed to a change in the conduction mechanism in the LRS of the ReRAM after the annealing. While the conduction mechanism before the annealing follows Ohmic conduction, the conduction of the ReRAM after the annealing is controlled by a trap-controlled space charge limited conduction mechanism. Additionally, the annealing of the Al2O3 tunnel barriers is also shown to improve the endurance and retention characteristics.

  18. Contact induced spin relaxation in graphene spin valves with Al2O3 and MgO tunnel barriers

    Directory of Open Access Journals (Sweden)

    Walid Amamou

    2016-03-01

    Full Text Available We investigate spin relaxation in graphene by systematically comparing the roles of spin absorption, other contact-induced effects (e.g., fringe fields, and bulk spin relaxation for graphene spin valves with MgO barriers, Al2O3 barriers, and transparent contacts. We obtain effective spin lifetimes by fitting the Hanle spin precession data with two models that include or exclude the effect of spin absorption. Results indicate that additional contact-induced spin relaxation other than spin absorption dominates the contact effect. For tunneling contacts, we find reasonable agreement between the two models with median discrepancy of ∼20% for MgO and ∼10% for Al2O3.

  19. Crested Tunnel Barriers for Fast, Scalable, Nonvolatile Semiconductor Memories (Theme 3)

    National Research Council Canada - National Science Library

    Likharev, Konstantin K; Ma, Tso-Ping

    2006-01-01

    .... If demonstrated in silicon-compatible materials with sufficient endurance under electric stress, this effect may enable high-density, high-speed nonvolatile memories that may potentially replace DRAM...

  20. Tissue adhesion to bioactive glass-coated silicone tubing in a rat model of peritoneal dialysis catheters and catheter tunnels.

    Science.gov (United States)

    Ross, Edward A; Batich, Christopher D; Clapp, William L; Sallustio, Judith E; Lee, Nadeen C

    2003-02-01

    Silicone peritoneal dialysis catheters do not develop tissue ingrowth, lack a mechanical barrier to periluminal bacterial migration and need cuffs for anchorage. We hypothesized that a bioactive glass coating composed of silicon, calcium, sodium and phosphorous oxides would cause a beneficial tissue reaction causing catheter adhesion, and tested this in a rat model. A hexane solvent-based method of coating silicone tubes with Bioglass powder was used, which maintained flexibility, and then the ultrastructure was confirmed with scanning electron microscopy (EM). Segments 2.5 cm were implanted subcutaneously in 8 Sprague-Dawley rats, with uncoated tubes as a contralateral control, and histology was done at 2, 4 and 6 weeks, including special stains and EM. The uncoated segments grossly had no adherence to surrounding tissue, and were physically separate from a thin fibrous capsule of approximately 50 micro width. Trichrome stains demonstrated the capsule was rich in collagen. There was minimal adjacent tissue reaction. In contrast, the coated tubes were palpably fixed to the soft tissues, and sections demonstrated an adjacent prominent layer of macrophages and multinucleated giant cells. Small numbers of lymphocytes were noted. This cellular reaction increased over the 6-week implant duration, and was also associated with neovascularization of the tissue adjacent to the segments (33 vessels in coated vs. 20 in controls per x 200 field, P tubing by promoting adhesion by collagen and cell proliferation, and are promising for future studies of peritoneal dialysis catheters.

  1. Zero time space. How quantum tunneling broke the light speed barrier

    Energy Technology Data Exchange (ETDEWEB)

    Nimtz, G. [Koeln Univ. (Germany). 2. Physikalisches Inst.; Haibel, A. [GKSS-Forschungszentrum Geesthacht GmbH (Germany). Div. for Neutron and Synchrotron Scattering]|[Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany)

    2008-07-01

    This English edition of a successful, proven title provides a sound scientific background while allowing a popular presentation of the physics behind the strange and mysterious tunneling process. Based on the groundbreaking experiments of author Guenther Nimtz, the topic is placed in a broader context by showing connections with other branches of physics. The authors begin by introducing such fundamental concepts as space and time and continue with tunneling phenomena from optics, nuclear, and solid state physics. Avoiding mathematical equations and definitions altogether, they explain step-by-step the prerequisites for the tunnel effect to function, from classical mechanics to quantum mechanics, right up to modern topics, such as wormholes and space travel a la Star Trek. The text is accompanied by a foreword written by astronaut Ulrich Walter, science team member of the D-2 Space Shuttle Mission. (orig.)

  2. Low Leakage Superconducting Tunnel Junctions with a Single Crystal Al2O3 Barrier

    Science.gov (United States)

    2016-03-30

    three layers were grown in situ in an ultra high vacuum (UHV) system with a nominal base pressure of ~1×10-10 Torr. First, a 120~150 nm thick...current-voltage (I-V) curves of a typical single-crystal Al2O3 tunnel junction taken at ~80 mK . One way to quantify the junction quality is to define a...80 mK on an epi-Re/epi-Al2O3/poly-Al tunnel junction. (a) Linear vertical scale. (b) Logarithmic vertical scale: absolute value is used. This

  3. Interacting and self-organized two-level states in tunnel barriers

    Science.gov (United States)

    Pesenson, L.; Robertazzi, R. P.; Buhrman, R. A.; Cypher, S. R.; Hunt, B. D.

    1991-01-01

    The excess low-frequency 1/f noise and discrete two-level resistance fluctuations (TLFs) were studied in small-area NbN-MgO-NbN tunnel junctions with a high, low-temperature density of active defects. Strong and evolving interactions between large TLFs indicate that these fluctuations result from the self-organization of interacting defect elements. In the low-T tunneling regime, an unusual slowing down of the rates and a decrease in amplitude with increasing T is sometimes observed indicative of a thermally induced change in the self-organized two-level state.

  4. Tunneling through a time-dependent barrier – a numerical study

    Indian Academy of Sciences (India)

    involved in what may be simply the stretching of a chemical bond to destruction. Or, as much to the point, an insulating layer separating two semiconducting layers may be sub- ject to a bias that effects the ease with which electrons can tunnel through it. Except, in the highly rarefied atmosphere prevailing in supersonic jets ...

  5. Dissipative tunneling through a potential barrier in the Lindblad theory of open quantum systems

    International Nuclear Information System (INIS)

    Isar, A.

    2000-01-01

    In the Lindblad theory for open quantum systems, and analytical expression of the tunneling probability through an inverted parabola is obtained. This probability depends on the environment coefficient and increase with the dissipation and the temperature of the thermal bath. (author)

  6. TAMR effect in the tunneling through monocrystalline GaAs barriers; TAMR-Effekt beim Tunneln durch einkristalline GaAs-Barrieren

    Energy Technology Data Exchange (ETDEWEB)

    Lobenhofer, Michael

    2013-01-28

    Within the scope of this thesis the TAMR-effect in magnetic tunnel junctions with a single-crystalline GaAs-barrier was investigated. As ferromagnetic electrodes Fe-, FeCo- and FePt-layers were used. The measured TAMR-effect was investigated with respect to its behaviour towards changes in external Parameters, like the applied voltage, the temperature and the external magnetic field. The physical origin of the effect was attributed to the interaction of Rashba- and Dresselhaus-Spin-Orbit-coupling inside the tunnelling barrier and at the metal/semiconductor-interfaces.

  7. Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing

    International Nuclear Information System (INIS)

    Akushichi, T.; Shuto, Y.; Sugahara, S.; Takamura, Y.

    2015-01-01

    We investigate spin injection into Si channels using three-terminal spin-accumulation (3T-SA) devices with high-quality CoFe/MgO/n-Si and CoFe/AlO x /n-Si tunnel spin-injectors whose tunnel barriers are formed by radical oxidation of Mg and Al thin films deposited on Si(100) substrates and successive annealing under radical-oxygen exposure. When the MgO and AlO x barriers are not treated by the radical-oxygen annealing, the Hanle-effect signals obtained from the 3T-SA devices are closely fitted by a single Lorentz function representing a signal due to trap spins. On the other hand, when the tunnel barriers are annealed under radical-oxygen exposure, the Hanle-effect signals can be accurately fitted by the superposition of a Lorentz function and a non-Lorentz function representing a signal due to accumulated spins in the Si channel. These results suggest that the quality improvement of tunnel barriers treated by radical-oxygen annealing is highly effective for spin-injection into Si channels

  8. Tunneling through a time-dependent barrier – a numerical study

    Indian Academy of Sciences (India)

    biomolecules have received serious attention in recent years. The emphasis has been on the dynamics of escape over fluctuating barriers which could arise as a result of stochastic re- orientations of a bridge unit or stochastically interrupted electronic pathway as in proteins. So the fluctuating barrier can act as good model ...

  9. Analysis of the resonant tunneling diode with the stepped pre-barrier

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Voves, J.

    2009-01-01

    Roč. 193, č. 1 (2009), s. 1-4 ISSN 1742-6588. [16th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructure. Monpellier, 24.8.2009 – 28.8.2009] R&D Projects: GA AV ČR KJB200670901; GA AV ČR(CZ) KAN401220801 Institutional research plan: CEZ:AV0Z20670512 Keywords : Resonant tunneling diodes * Nonequilibrium Green functions * Hysteresis Subject RIV: JA - Electronics ; Optoelectronics , Electrical Engineering

  10. Influence of the buffer-layer on the tunnel barrier quality in CoFeB/MgO/CoFeB magnetic tunnel junctions on the tunnel magneto resistance (TMR)

    Energy Technology Data Exchange (ETDEWEB)

    Zbarsky, Vladyslav; Walter, Marvin; Eilers, Gerrit; Leutenantsmeyer, Johannes Christian; Muenzenberg, Markus [I. Physikalisches Institut, Georg-August-Universitaet Goettingen, 37077 Goettingen (Germany); Peretzki, Patrick; Seibt, Michael [IV. Physikalisches Institut, Georg-August-Universitaet Goettingen, 37077 Goettingen (Germany)

    2011-07-01

    The optimization of MTJs is necessary for increasing of TMR and therefore is very important for the production of MRAM devices. The quality of the tunnel barrier of our CoFeB/MgO/CoFeB MTJs is essential for getting high TMR. For this reason we investigate the influence of roughness of the MgO layer on the TMR. Another important parameter which we could optimize is the choice and preparation of the buffer-layer. For example we compared two sorts of Ta buffer-layers: prepared via magnetron sputtering and via e-beam evaporation. Already by optimizing these two parameters we increase the TMR from 80% to above 200%. In addition we show the investigations of the influence of the annealing temperatures and annealing duration on the TMR. Fast annealing time prevents diffusion, however for short annealing time no full crystallization is observed.

  11. ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell.

    Science.gov (United States)

    Bethge, O; Nobile, M; Abermann, S; Glaser, M; Bertagnolli, E

    2013-10-01

    Various metal oxides are probed as extrinsic thin tunnel barriers in Semiconductor Insulator Semiconductor solar cells. Namely Al 2 O 3 , ZrO 2 , Y 2 O 3 , and La 2 O 3 thin films are in between n-type ZnO:Al (AZO) and p-type Si substrates by means of Atomic Layer Deposition. Low reverse dark current-density as low as 3×10 -7  A/cm 2 , a fill factor up to 71.3%, and open-circuit voltage as high as 527 mV are obtained, achieving conversion efficiency of 8% for the rare earth oxide La 2 O 3 . ZrO 2 and notably Al 2 O 3 show drawbacks in performance suggesting an adverse reactivity with AZO as also indicated by X-ray Photoelectron Spectroscopy.

  12. ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell ?

    OpenAIRE

    Bethge, O.; Nobile, M.; Abermann, S.; Glaser, M.; Bertagnolli, E.

    2013-01-01

    Various metal oxides are probed as extrinsic thin tunnel barriers in Semiconductor Insulator Semiconductor solar cells. Namely Al2O3, ZrO2, Y2O3, and La2O3 thin films are in between n-type ZnO:Al (AZO) and p-type Si substrates by means of Atomic Layer Deposition. Low reverse dark current?density as low as 3?10?7?A/cm2, a fill factor up to 71.3%, and open-circuit voltage as high as 527?mV are obtained, achieving conversion efficiency of 8% for the rare earth oxide La2O3. ZrO2 and notably Al2O3...

  13. ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell☆

    Science.gov (United States)

    Bethge, O.; Nobile, M.; Abermann, S.; Glaser, M.; Bertagnolli, E.

    2013-01-01

    Various metal oxides are probed as extrinsic thin tunnel barriers in Semiconductor Insulator Semiconductor solar cells. Namely Al2O3, ZrO2, Y2O3, and La2O3 thin films are in between n-type ZnO:Al (AZO) and p-type Si substrates by means of Atomic Layer Deposition. Low reverse dark current–density as low as 3×10−7 A/cm2, a fill factor up to 71.3%, and open-circuit voltage as high as 527 mV are obtained, achieving conversion efficiency of 8% for the rare earth oxide La2O3. ZrO2 and notably Al2O3 show drawbacks in performance suggesting an adverse reactivity with AZO as also indicated by X-ray Photoelectron Spectroscopy. PMID:26877596

  14. Temperature dependence of energy barrier in CoFeB-MgO magnetic tunnel junctions with perpendicular easy axis

    Science.gov (United States)

    Takeuchi, Y.; Sato, H.; Fukami, S.; Matsukura, F.; Ohno, H.

    2015-10-01

    We investigate an energy barrier E that determines the thermal stability factor of nanoscale CoFeB-MgO magnetic tunnel junctions (MTJs) with a perpendicular easy axis as a function of temperature between 298 and 393 K. For the MTJs with a junction diameter above 43 nm, Ε is much smaller and less sensitive to the temperature than the magnetic anisotropy energy of the total recording volume. For the MTJ with a diameter of 33 nm, E and the anisotropy energy take about the same value and show similar temperature dependence. The results can be explained by considering a crossover of magnetization reversal mode from nucleation type to single-domain like type, as the device dimensions reduce.

  15. Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Minsoo, E-mail: minsoo@mosfet.t.u-tokyo.ac.jp; Kim, Younghyun; Yokoyama, Masafumi; Nakane, Ryosho; Kim, SangHyeon; Takenaka, Mitsuru; Takagi, Shinichi

    2014-04-30

    We have studied a simple structure n-channel tunnel field-effect transistor with a pure-Ge/strained-Si hetero-junction. The device operation was demonstrated for the devices fabricated by combining epitaxially-grown Ge on strained-silicon-on-insulator substrates. Atomic-layer-deposition-Al{sub 2}O{sub 3}-based gate stacks were formed with electron cyclotron resonance plasma post oxidation to ensure the high quality metal–oxide–semiconductor interface between the high-k insulator and Ge. While the gate leakage current and drain current saturation are well controlled, relatively higher minimum subthreshold swing of 125 mV/dec and lower I{sub ON}/I{sub OFF} ratio of 10{sup 3}–10{sup 4} were obtained. It is expected that these device characteristics can be improved by further process optimization. - Highlights: • Layer by layer growth of Ge • Uniform interface between Ge and the insulator • Gate leakage current and drain current saturation seem to be well controlled. • The output characteristics show good saturation.

  16. Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications

    International Nuclear Information System (INIS)

    Kim, Minsoo; Kim, Younghyun; Yokoyama, Masafumi; Nakane, Ryosho; Kim, SangHyeon; Takenaka, Mitsuru; Takagi, Shinichi

    2014-01-01

    We have studied a simple structure n-channel tunnel field-effect transistor with a pure-Ge/strained-Si hetero-junction. The device operation was demonstrated for the devices fabricated by combining epitaxially-grown Ge on strained-silicon-on-insulator substrates. Atomic-layer-deposition-Al 2 O 3 -based gate stacks were formed with electron cyclotron resonance plasma post oxidation to ensure the high quality metal–oxide–semiconductor interface between the high-k insulator and Ge. While the gate leakage current and drain current saturation are well controlled, relatively higher minimum subthreshold swing of 125 mV/dec and lower I ON /I OFF ratio of 10 3 –10 4 were obtained. It is expected that these device characteristics can be improved by further process optimization. - Highlights: • Layer by layer growth of Ge • Uniform interface between Ge and the insulator • Gate leakage current and drain current saturation seem to be well controlled. • The output characteristics show good saturation

  17. Comparison of Electron Transmittance and Tunneling Current through a Trapezoidal Potential Barrier with Spin Polarization Consideration by using Analytical and Numerical Approaches

    Science.gov (United States)

    Nabila, Ezra; Noor, Fatimah A.; Khairurrijal

    2017-07-01

    In this study, we report an analytical calculation of electron transmittance and polarized tunneling current in a single barrier heterostructure of a metal-GaSb-metal by considering the Dresselhaus spin orbit effect. Exponential function, WKB method and Airy function were used in calculating the electron transmittance and tunneling current. A Transfer Matrix Method, as a numerical method, was utilized as the benchmark to evaluate the analytical calculation. It was found that the transmittances calculated under exponential function and Airy function is the same as that calculated under TMM method at low electron energy. However, at high electron energy only the transmittance calculated under Airy function approach is the same as that calculated under TMM method. It was also shown that the transmittances both of spin-up and spin-down conditions increase as the electron energy increases for low energies. Furthermore, the tunneling current decreases with increasing the barrier width.

  18. Optimized spin-injection efficiency and spin MOSFET operation based on low-barrier ferromagnet/insulator/n-Si tunnel contact

    Science.gov (United States)

    Yang, Yang; Wu, Zhenhua; Yang, Wen; Li, Jun; Chen, Songyan; Li, Cheng

    2017-06-01

    We theoretically investigate the spin injection in different ferromagnet/insulator/n-Si tunnel contacts by using the lattice non-equilibrium Green’s function method. We find that the tunnel contacts with low-barrier materials such as TiO2 and Ta2O5 have far lower resistances than the conventional-barrier materials, resulting in a wider and attainable optimum parameters window for improving the spin-injection efficiency and magnetoresistance ratio of a vertical-spin metal-oxide-semiconductor field-effect transistor. Additionally, we find that the spin-asymmetry coefficient of the TiO2 tunnel contact has a negative value, while that of the Ta2O5 contact can be tuned between positive and negative values by changing the parameters.

  19. Three-dimensional integration technology of magnetic tunnel junctions for magnetoresistive random access memory application

    Science.gov (United States)

    Yakushiji, Kay; Takagi, Hideki; Watanabe, Naoya; Fukushima, Akio; Kikuchi, Katsuya; Kurashima, Yuuichi; Sugihara, Atsushi; Kubota, Hitoshi; Yuasa, Shinji

    2017-06-01

    Three-dimensional integration processes (based on direct wafer bonding and back-surface silicon removal) for magnetic tunnel junctions with perpendicular magnetization (p-MTJs) were developed. Perfect wafer bonding, namely, bonding without interfacial voids, and damageless silicon removal were successfully demonstrated by using very flat tantalum cap layers. Moreover, p-MTJ nanopillars subjected to these processes exhibited no degradation in magnetoresistance or spin-transfer-torque (STT) switching. Magnetoresistive random access memory (MRAM) technology incorporating these processes (direct wafer bonding and back-surface silicon removal) will make it possible to integrate epitaxial MTJs (with a single-crystal tunnel barrier) and ferromagnetic electrode layers (based on new materials).

  20. Manufacturing technology program for high burnout silicon Schottky-barrier mixer diodes for Navy air-to-air avionics

    Science.gov (United States)

    Anand, Y.; Ellis, S.

    1982-02-01

    This report describes the establishment of low cost semiconductor processes to manufacture low-barrier-height high-burnout X-band silicon Schottky barrier diodes in production quantities. These devices are thermal-compression-bonded in a rugged low-cost pill (ODS-119) package. They exhibit an overall low noise figure of 7.0 dB (single side band) at 0.5 mW of local oscillator power level and RF burnout of 12 watts (tau = 1 microsec and 1000 Hz rep. rate). Reliability and ruggedness of the design has been demonstrated by tests taken from MIL.S 19500 F.

  1. Pulse-height response of silicon surface-barrier detectors to high-energy heavy ions

    International Nuclear Information System (INIS)

    Smith, G.D.

    1973-01-01

    The pulse-height defect (PHD) of high-energy heavy ions in silicon surface-barrier detectors can be divided into three components: (1) energy loss in the gold-surface layer, (2) a nuclear-stopping defect, and (3) a defect due to recombination of electron-hole pairs in the plasma created by the heavy ion. The plasma recombination portion of the PHD was the subject of this study using the variation of the PHD with (1) the angle of incidence of incoming heavy ions, and (2) changes in the detector bias. The Tandem Van de Graaff accelerator at Argonne National Laboratory was used to produce scattered beam ions ( 32 S, 35 Cl) and heavy target recoils (Ni, Cu, 98 Mo, Ag, Au) at sufficient energies to produce a significant recombination defect. The results confirm the existence of a recombination zone at the front surface of these detectors and the significance of plasma recombination as a portion of the pulse-height defect. (Diss. Abstr. Int., B)

  2. Low-resistance magnetic tunnel junctions prepared by partial remote plasma oxidation of 0.9 nm Al barriers

    International Nuclear Information System (INIS)

    Ferreira, Ricardo; Freitas, Paulo P.; MacKenzie, Maureen; Chapman, John N.

    2005-01-01

    Current perpendicular to the plane read-head elements suitable for high-density magnetic storage require low resistance while maintaining a reasonable magnetoresistive (MR) signal (RxA 2 and MR>20% for areal densities >200 Gb/in 2 ). This letter shows that competitive low RxA junctions can be produced using underoxidized barriers starting from 0.9 nm thick Al layers. For as-deposited junctions, tunneling magnetoresistance (TMR) ∼20% for RxA∼2-15 Ω μm 2 is obtained, while in the RxA∼60-150 Ω μm 2 range, TMR values between 40% to 45% are achieved. A limited number of junctions exhibits considerably lower RxA values with respect to the average, while keeping a similar MR (down to 0.44 Ω μm 2 with TMR of 20% and down to 2.2 Ω μm 2 with TMR of 52%). Experimental data suggest that current confinement to small regions (barrier defects/hot spots) may explain these results

  3. Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier

    International Nuclear Information System (INIS)

    Cao, Y.; Chu, R.; Li, R.; Chen, M.; Williams, A. J.

    2016-01-01

    In a vertical GaN Schottky barrier diode, the free electron concentration n in the 6-μm-thick drift layer was found to greatly impact the diode reverse leakage current, which increased from 2.1 × 10 −7  A to 3.9 × 10 −4  A as n increased from 7.5 × 10 14  cm −3 to 6.3 × 10 15  cm −3 at a reverse bias of 100 V. By capping the drift layer with an ultrathin 5-nm graded AlGaN layer, reverse leakage was reduced by more than three orders of magnitude with the same n in the drift layer. We attribute this to the increased Schottky barrier height with the AlGaN at the surface. Meanwhile, the polarization field within the graded AlGaN effectively shortened the depletion depth, which led to the formation of tunneling current at a relatively small forward bias. The turn-on voltage in the vertical Schottky diodes was reduced from 0.77 V to 0.67 V—an advantage in reducing conduction loss in power switching applications.

  4. Planar heterostructures of single-layer transition metal dichalcogenides: Composite structures, Schottky junctions, tunneling barriers, and half metals

    Science.gov (United States)

    Aras, Mehmet; Kılıç, ćetin; Ciraci, S.

    2017-02-01

    Planar composite structures formed from the stripes of transition metal dichalcogenides joined commensurately along their zigzag or armchair edges can attain different states in a two-dimensional (2D), single-layer, such as a half metal, 2D or one-dimensional (1D) nonmagnetic metal and semiconductor. Widening of stripes induces metal-insulator transition through the confinements of electronic states to adjacent stripes, that results in the metal-semiconductor junction with a well-defined band lineup. Linear bending of the band edges of the semiconductor to form a Schottky barrier at the boundary between the metal and semiconductor is revealed. Unexpectedly, strictly 1D metallic states develop in a 2D system along the boundaries between stripes, which pins the Fermi level. Through the δ doping of a narrow metallic stripe one attains a nanowire in the 2D semiconducting sheet or narrow band semiconductor. A diverse combination of constituent stripes in either periodically repeating or finite-size heterostructures can acquire critical fundamental features and offer device capacities, such as Schottky junctions, nanocapacitors, resonant tunneling double barriers, and spin valves. These predictions are obtained from first-principles calculations performed in the framework of density functional theory.

  5. Mixed quantum classical calculation of proton transfer reaction rates: from deep tunneling to over the barrier regimes.

    Science.gov (United States)

    Xie, Weiwei; Xu, Yang; Zhu, Lili; Shi, Qiang

    2014-05-07

    We present mixed quantum classical calculations of the proton transfer (PT) reaction rates represented by a double well system coupled to a dissipative bath. The rate constants are calculated within the so called nontraditional view of the PT reaction, where the proton motion is quantized and the solvent polarization is used as the reaction coordinate. Quantization of the proton degree of freedom results in a problem of non-adiabatic dynamics. By employing the reactive flux formulation of the rate constant, the initial sampling starts from the transition state defined using the collective reaction coordinate. Dynamics of the collective reaction coordinate is treated classically as over damped diffusive motion, for which the equation of motion can be derived using the path integral, or the mixed quantum classical Liouville equation methods. The calculated mixed quantum classical rate constants agree well with the results from the numerically exact hierarchical equation of motion approach for a broad range of model parameters. Moreover, we are able to obtain contributions from each vibrational state to the total reaction rate, which helps to understand the reaction mechanism from the deep tunneling to over the barrier regimes. The numerical results are also compared with those from existing approximate theories based on calculations of the non-adiabatic transmission coefficients. It is found that the two-surface Landau-Zener formula works well in calculating the transmission coefficients in the deep tunneling regime, where the crossing point between the two lowest vibrational states dominates the total reaction rate. When multiple vibrational levels are involved, including additional crossing points on the free energy surfaces is important to obtain the correct reaction rate using the Landau-Zener formula.

  6. Long-term reliable physically unclonable function based on oxide tunnel barrier breakdown on two-transistors two-magnetic-tunnel-junctions cell-based embedded spin transfer torque magnetoresistive random access memory

    Science.gov (United States)

    Takaya, Satoshi; Tanamoto, Tetsufumi; Noguchi, Hiroki; Ikegami, Kazutaka; Abe, Keiko; Fujita, Shinobu

    2017-04-01

    Among the diverse applications of spintronics, security for internet-of-things (IoT) devices is one of the most important. A physically unclonable function (PUF) with a spin device (spin transfer torque magnetoresistive random access memory, STT-MRAM) is presented. Oxide tunnel barrier breakdown is used to realize long-term stability for PUFs. A secure PUF has been confirmed by evaluating the Hamming distance of a 32-bit STT-MRAM-PUF fabricated using 65 nm CMOS technology.

  7. Effect of tunneling barrier as spacer on exchange coupling of CoFeB/AlOx/Co trilayer structures

    International Nuclear Information System (INIS)

    Chen, Yuan-Tsung; Wu, J.W.

    2011-01-01

    Highlights: → The direct spin exchange-coupling effect of the CoFeB/Co bilayer structure is stronger than the indirect spin exchange-coupling effect of the CoFeB/AlO x /Co MTJ. → The relationship between the Co texture and the magnetic properties suggests that the enhanced Co texture increases the saturation magnetization (Ms) and reduces the coercivity (Hc). → Higher Hc values are obtained at thinner AlO x thicknesses, because the spin decoupling effect occurs between the CoFeB and Co layers. - Abstract: Magnetic tunneling junctions (MTJs) have a sandwiched structure, which comprises a top ferromagnetic (FM1) layer, an insulating tunneling layer (spacer), and a bottom ferromagnetic (FM2) layer. Exchange coupling in MTJs has been extensively widely examined because the effect of spacer thickness on the ferromagnetic spin-coupling can be exploited in read-head sensors, spin-valve structures, and magntoresistance random access memories (MRAMs). In this investigation, MTJs were deposited in the sequence, glass/CoFeB(50 A)/AlO x (d)/Co(100 A), where the thickness of the AlO x layer d = 12, 17, 22, 26 or 30 A. Saturation magnetization (M s ) results demonstrate that the exchange coupling strength and coercivity (H c ) can be varied considerably by varying the tunneling barrier AlO x spacer. The X-ray diffraction patterns (XRD) include a main peak from hexagonal close-packed (HCP) Co with a highly (0 0 2) textured structure at 2θ = 44.7 o , and AlO x and CoFeB are amorphous phases. The full width at half maximum (FWHM) of the Co (0 0 2) peak declines as the AlO x thickness increases, revealing that the Co layer becomes more crystalline. The magnetic results reveal that the magnetic characteristics are related to the Co crystallinity. The exchange coupling strength increases with AlO x thickness. The coercivity (H c ) also increases, because the Co crystallinity is eliminated.

  8. Impact on the Gas Barrier Property of Silicon Oxide Films Prepared by Tetramethylsilane-Based PECVD Incorporating with Ammonia

    Directory of Open Access Journals (Sweden)

    Hua-Wen Liu

    2017-01-01

    Full Text Available The gas barrier property of a silicon oxide (SiOx film synthesized from plasma-enhanced chemical vapor deposition using the tetramethysilane (TMS-oxygen gas mixture was modified by introducing ammonia gas in the glow discharge. The change in the glow discharge with the ammonia gas incorporation was monitored by an optical emission spectrometer (OES. Structures, chemical bond configurations, and material properties of the resulting films were investigated. The introduced ammonia gas in the TMS-oxygen plasma resulted in emission lines dominated by the N2 and CN species with the suppression of the OH and oxygen-related radicals, thereby introducing nitrogen and carbon atoms in the deposited film. A silicon oxynitride (SiOxNy film had the best surface morphology and the lowest residual internal stress was achievable by controlling the reactant gas flow ratio of the ammonia and oxygen. The barrier property to the water vapor permeation of the silicon oxide film (~1.65 g/m2/day deposited onto the polyethylene terephthalate (PET substrate was thus greatly improved to 0.06 g/m2/day for the film synthesized from an adequate TMS-oxygen-ammonia gas mixture.

  9. Gate-defined quantum dots in intrinsic silicon.

    Science.gov (United States)

    Angus, Susan J; Ferguson, Andrew J; Dzurak, Andrew S; Clark, Robert G

    2007-07-01

    We report the fabrication and measurement of silicon quantum dots with tunable tunnel barriers in a narrow-channel field-effect transistor. Low-temperature transport spectroscopy is performed in both the many-electron ( approximately 100 electrons) regime and the few-electron ( approximately 10 electrons) regime. Excited states in the bias spectroscopy provide evidence of quantum confinement. These results demonstrate that depletion gates are an effective technique for defining quantum dots in silicon.

  10. New Formation Technology of Plasma Display Panel Barrier-Rib Structure Using Silicone Rubber Mold Transferred from SU-8 Master Structure

    Science.gov (United States)

    Son, Seung-Hyun; Park, Yong-Suk; Choi, Sie-Young

    2002-06-01

    A new formation technology for a plasma display panel (PDP) barrier-rib structure is presented to realize a barrier rib with a high aspect ratio and reduce the manufacturing cost. In this study, we used an SU-8 50 photoresist, which is sensitive to UV irradiation, instead of polymethylmethacrylate (PMMA) which is sensitive to X-ray irradiation, so that the silicone rubber mold could be applicable to a large-area PDP. The first step is to produce an SU-8 master structure using amorphous silicon as an adhesion layer between a glass substrate and SU-8 photoresist. Second, a precise soft mold is manufactured for mass replication of the PDP barrier-rib construction, by molding liquid silicone rubber onto the glass substrate with lithographically defined SU-8 master structures. Third, a PDP barrier-rib structure is formed using the pattern-transferring process with a reusable silicone rubber mold. This is a very simple and inexpensive process consisting with printing of barrier-rib paste, drying, pattern-transferring, and sintering. The pattern-transferring process with a soft mold also demonstrates that the disadvantages of the conventional mold pressing process with a hard mold can be overcome. Consequently, by using the pattern-transferring process with the silicone rubber mold transferred from the SU-8 master structure, the desired barrier-rib shapes can be realized with a high aspect ratio and various dimensions.

  11. Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

    International Nuclear Information System (INIS)

    Daqiq, Reza; Ghobadi, Nader

    2016-01-01

    We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching. - Highlights: • The quantum size effects are studied in double barrier magnetic tunnel junctions. • Spin torque (ST) components oscillate for increasing of middle spacer thicknesses. • Due to the resonant tunneling in the quantum well, oscillations have appeared. • By replacement a metal spacer with a semiconductor (ZnO) ST has increased. • The ST components vs. bias show gradually decreasing unlike spin valves or MTJs.

  12. Liquid phase mass production of air-stable black phosphorus/phospholipids nanocomposite with ultralow tunneling barrier

    Science.gov (United States)

    Zhang, Qiankun; Liu, Yinan; Lai, Jiawei; Qi, Shaomian; An, Chunhua; Lu, Yao; Duan, Xuexin; Pang, Wei; Zhang, Daihua; Sun, Dong; Chen, Jian-Hao; Liu, Jing

    2018-04-01

    Few-layer black phosphorus (FLBP), a recently discovered two-dimensional semiconductor, has attracted substantial attention in the scientific and technical communities due to its great potential in electronic and optoelectronic applications. However, reactivity of FLBP flakes with ambient species limits its direct applications. Among various methods to passivate FLBP in ambient environment, nanocomposites mixing FLBP flakes with stable matrix may be one of the most promising approaches for industry applications. Here, we report a simple one-step procedure to mass produce air-stable FLBP/phospholipids nanocomposite in liquid phase. The resultant nanocomposite is found to have ultralow tunneling barrier for charge carriers which can be described by an Efros-Shklovskii variable range hopping mechanism. Devices made from such mass-produced FLBP/phospholipids nanocomposite show highly stable electrical conductivity and opto-electrical response in ambient conditions, indicating its promising applications in both electronic and optoelectronic applications. This method could also be generalized to the mass production of nanocomposites consisting of other air-sensitive 2D materials, such as FeSe, NbSe2, WTe2, etc.

  13. Parameterization of the pulse height defect and resolution for low-Z ions incident on silicon barrier detectors

    CERN Document Server

    Lee, C

    1999-01-01

    The pulse height output of silicon charged particle detectors has been studied for low Z particles having energies in the range of 1-5 MeV/amu. Particle beams of sup 7 Li, sup 9 Be, sup 1 sup 1 B, sup 1 sup 2 C, and sup 1 sup 6 O nuclei were scattered from sup 1 sup 9 sup 7 Au targets and their energies were measured with two silicon surface barrier detectors. For alpha-particle detection, both beam particles and those from a calibrated sup 2 sup 2 sup 8 Th source were used. The data are anomalous in that the pulse heights for different ions of the same energy increase with atomic number, contrary to observations for fission fragments. It is found that the pulse height output of the detectors and the width of the pulse height distribution (FWHM) increase with the Z and Z sup 2 , respectively, of the detected particle. (author)

  14. Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate

    International Nuclear Information System (INIS)

    Jiang Chao; Lu Hai; Chen Dun-Jun; Ren Fang-Fang; Zhang Rong; Zheng You-Dou

    2014-01-01

    In this work, the breakdown characteristics of AlGaN/GaN planar Schottky barrier diodes (SBDs) fabricated on the silicon substrate are investigated. The breakdown voltage (BV) of the SBDs first increases as a function of the anode-to-cathode distance and then tends to saturate at larger inter-electrode spacing. The saturation behavior of the BV is likely caused by the vertical breakdown through the intrinsic GaN buffer layer on silicon, which is supported by the post-breakdown primary leakage path analysis with the emission microscopy. Surface passivation and field plate termination are found effective to suppress the leakage current and enhance the BV of the SBDs. A high BV of 601 V is obtained with a low on-resistance of 3.15 mΩ·cm 2 . (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  15. Deep repository - Engineered barrier system. Erosion and sealing processes in tunnel backfill materials investigated in laboratory

    International Nuclear Information System (INIS)

    Sanden, Torbjoern; Boergesson, Lennart; Dueck, Ann; Goudarzi, Reza; Loennqvist, Margareta

    2008-12-01

    SKB in Sweden and Posiva in Finland are developing and plan to implement similar disposal concepts for the final disposal of spent nuclear fuel. Co-operation and joint development work between Posiva and SKB with the overall objective to develop backfill concepts and techniques for sealing and closure of the repository have been going on for several years. The investigation described in this report is intended to acquire more knowledge regarding the behavior of some of the candidate backfilling materials. Blocks made of three different materials (Friedland clay, Asha 230 or a bentonite/ballast 30/70 mixture) as well as different bentonite pellets have been examined. The backfill materials will be exposed to an environment simulating that in a tunnel, with high relative humidity and water inflow from the rock. The processes and properties investigated are: 1. Erosion properties of blocks and pellets (Friedland blocks, MX-80 pellets, Cebogel QSE pellets, Minelco and Friedland granules). 2. Displacements of blocks after emplacement in a deposition drift (Blocks of Friedland, Asha 230 and Mixture 30/70). 3. The ability of these materials to seal a leaking in-situ cast plug cement/rock but also other fractures in the rock (MX-80 pellets). 4. The self healing ability after a piping scenario (Blocks of Friedland, Asha 230 Mixture 30/70 and also MX-80 pellets). 5. Swelling and cracking of the compacted backfill blocks caused by relative humidity. The erosion properties of Friedland blocks were also investigated in Phase 2 of the joint SKBPosiva project 'Backfilling and Closure of the Deep Repository, BACLO, which included laboratory scale experiments. In this phase of the project (3) some completing tests were performed with new blocks produced for different field tests. These blocks had a lower density than intended and this has an influence on the erosion properties measured. The erosion properties of MX-80 pellets were also investigated earlier in the project but an

  16. On the use of a charged tunnel layer as a hole collector to improve the efficiency of amorphous silicon thin-film solar cells

    Science.gov (United States)

    Ke, Cangming; Peters, Ian Marius; Sahraei, Nasim; Aberle, Armin G.; Stangl, Rolf

    2015-06-01

    A new concept, using a negatively charged tunnel layer as a hole collector, is proposed and theoretically investigated for application in amorphous silicon thin-film solar cells. The concept features a glass/transparent conductive oxide/ultra-thin negatively charged tunnel layer/intrinsic a-Si:H/n-doped a-Si:H/metal structure. The key feature of this so called t+-i-n structure is the introduction of a negatively charged tunnel layer (attracting holes from the intrinsic absorber layer), which substitutes the highly recombination active p-doped a-Si:H layer in a conventional p-i-n configuration. Atomic layer deposited aluminum oxide (ALD AlOx) is suggested as a potential candidate for such a tunnel layer. Using typical ALD AlOx parameters, a 27% relative efficiency increase (i.e., from 9.7% to 12.3%) is predicted theoretically for a single-junction a-Si:H solar cell on a textured superstrate. This prediction is based on parameters that reproduce the experimentally obtained external quantum efficiency and current-voltage characteristics of a conventional processed p-i-n a-Si:H solar cell, reaching 9.7% efficiency and serving as a reference. Subsequently, the p-doped a-Si:H layer is replaced by the tunnel layer (studied by means of numerical device simulation). Using a t+-i-n configuration instead of a conventional p-i-n configuration will not only increase the short-circuit current density (from 14.4 to 14.9 mA/cm2, according to our simulations), it also enhances the open-circuit voltage and the fill factor (from 917 mV to 1.0 V and from 74% to 83%, respectively). For this concept to work efficiently, a high work function front electrode material or a high interface charge is needed.

  17. Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells.

    Science.gov (United States)

    Uzum, Abdullah; Fukatsu, Ken; Kanda, Hiroyuki; Kimura, Yutaka; Tanimoto, Kenji; Yoshinaga, Seiya; Jiang, Yunjian; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ito, Seigo

    2014-01-01

    The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the n(+) emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion.

  18. Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells

    Science.gov (United States)

    Uzum, Abdullah; Fukatsu, Ken; Kanda, Hiroyuki; Kimura, Yutaka; Tanimoto, Kenji; Yoshinaga, Seiya; Jiang, Yunjian; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ito, Seigo

    2014-12-01

    The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the n+ emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion.

  19. Process and device integration for silicon tunnel FETs utilizing isoelectronic trap technology to enhance the ON current

    Science.gov (United States)

    Mori, Takahiro; Asai, Hidehiro; Fukuda, Koichi; Matsukawa, Takashi

    2018-04-01

    A tunnel FET (TFET) is a candidate replacement for conventional MOSFETs to realize low-power LSI. The most significant issue with the practical application of TFETs concerns their low tunneling current. Si is an indirect-gap material with a low band-to-band tunneling probability and is not favored for the channel. However, a new technology has recently been proposed to enhance the tunneling current in Si-TFETs by utilizing isoelectronic trap (IET) technology. IET technology provides an innovative approach to realizing low-power LSI with TFETs. In this paper, state-of-the-art research on Si-TFETs with IET technology from the viewpoint of process and device integration is reviewed.

  20. Investigations of the interactions of silicon dioxide with copper-aluminum alloy used as an adhesion promoter and diffusion barrier for copper metallization on silicon dioxide

    Science.gov (United States)

    Wang, Pei-I.

    This study explores the concept of alloying copper with Al in order to impart properties that will make Cu useful for interconnect applications in ICs. The advantages of using Al as the alloying element lies in the thermodynamically favored interaction of Al with the underlying dielectric and with the O 2 at the surface of pure Cu thus achieving both the adhesion and passivation. This approach has been shown to generate an ultra thin interfacial layer, which acts as an adhesion promoter and diffusion barrier against Cu migration in the dielectric, without significantly affecting the resistivity of Cu. An emphasis has been placed to examine (a) the interaction of Al (from the Cu-Al alloy) with SiO2 at the alloy-SiO2 interface, (b) the Al migration to surface of the alloy or pure Cu if used, and (c) the impact of such migration on the bulk Cu film and passivation on the surface. In this work, sputtered Cu-Al (1--5 at%), with a resistivity in the range of 5--6 muO-cm, were studied as diffusion barriers/adhesion promoters between SiO2 and pure Cu. The films were examined in as-deposited state and after anneal at different temperatures for varying times and in different ambients by the use of surface and interface characterization techniques, Rutherford backscattering spectrometry (RBS) and secondary ion mass spectroscopy (SIMS), and resistance measurements together with metal-oxide-silicon (MOS) capacitor studies. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) were also used to elucidate the structure. The results elucidate the mechanisms of Al movement and interaction with the interface SiO2 and O2 on surface and indicate that films of Cu doped with Al do act as a suitable diffusion barrier and adhesion promoter between SiO2 and Cu.

  1. Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier

    International Nuclear Information System (INIS)

    Yang, Zhichao; Zhang, Yuewei; Nath, Digbijoy N.; Rajan, Siddharth; Khurgin, Jacob B.

    2015-01-01

    We report on Gallium Nitride-based tunneling hot electron transistor amplifier with common-emitter current gain greater than 1. Small signal current gain up to 5 and dc current gain of 1.3 were attained in common-emitter configuration with collector current density in excess of 50 kA/cm 2 . The use of a combination of 1 nm GaN/3 nm AlN layers as an emitter tunneling barrier was found to improve the energy collimation of the injected electrons. These results represent demonstration of unipolar vertical transistors in the III-nitride system that can potentially lead to higher frequency and power microwave devices

  2. Electroluminescence from single nanowires by tunnel injection: an experimental study

    OpenAIRE

    Zimmler, Mariano A.; Bao, Jiming; Shalish, Ilan; Yi, Wei; Yoon, Joonah; Narayanamurti, Venkatesh; Capasso, Federico

    2007-01-01

    We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel-injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the stan...

  3. Experimental and ab initio study on structures and internal barriers to rotation in α-stannyl, germanium, and silicon carbamates

    Science.gov (United States)

    Jadidi, Khosrow; Khaligh, Nader Ghaffari; Islami, Parisa; Aryan, Reza; Arvin-Nezhad, Hamid

    2009-02-01

    A detailed study of structural parameters and internal rotational barriers in α-stannyl, germanium and silicon carbamates 1 [H 3 CX-CH 2-N(Me)CO 2Me X dbnd C, Si, Ge, Sn] were calculated at HF/6-311G, HF/3-21G and B3LYP/3-21G//HF/3-21G levels and compared with DNMR data of synthesized molecules and a literature X-ray data. Two minimum-energy conformers, namely A and B, with almost similar energies were found for these molecules. Effect of heteroatom on structure and relative energies ( Erel) between the participants in the conformational equilibrium (A ↔ B) of these carbamates has been investigated.

  4. In vitro permeation and disposition of niacinamide in silicone and porcine skin of skin barrier-mimetic formulations.

    Science.gov (United States)

    Haque, Tasnuva; Lane, Majella E; Sil, Bruno C; Crowther, Jonathan M; Moore, David J

    2017-03-30

    Niacinamide (NIA) is an amide form of vitamin B3 which is used in cosmetic formulations to improve various skin conditions and it has also been shown to increase stratum corneum thickness following repeated application. In this study, three doses (5, 20 and 50μL per cm 2 ) of two NIA containing oil-in-water skin barrier-mimetic formulations were evaluated in silicone membrane and porcine ear skin and compared with a commercial control formulation. Permeation studies were conducted over 24h in Franz cells and at the end of the experiment membranes were washed and niacinamide was extracted. For the three doses, retention or deposition of NIA was generally higher in porcine skin compared with silicone membrane, consistent with the hydrophilic nature of the active. Despite the control containing a higher amount of active, comparable amounts of NIA were deposited in skin for all formulations for all doses; total skin absorption values (permeation and retention) of NIA were also comparable across all formulations. For infinite (50μL) and finite (5μL) doses the absolute permeation of NIA from the control formulation was significantly higher in porcine skin compared with both test formulations. This likely reflects differences in formulation components and/or presence of skin penetration enhancers in the formulations. Higher permeation for the 50 and 20μL dose was also evident in porcine skin compared with silicone membrane but the opposite is the case for the finite dose. The findings point to the critical importance of dose and occlusion when evaluating topical formulations in vitro and also the likelihood of exaggerated effects of excipients on permeation at infinite and pseudo-finite dose applications. Copyright © 2017 Elsevier B.V. All rights reserved.

  5. Modeling and optimization of a double-well double-barrier GaN/AlGaN/GaN/AlGaN resonant tunneling diode

    Science.gov (United States)

    Liu, Yang; Gao, Bo; Gong, Min; Shi, Ruiying

    2017-06-01

    The influence of a GaN layer as a sub-quantum well for an AlGaN/GaN/AlGaN double barrier resonant tunneling diode (RTD) on device performance has been investigated by means of numerical simulation. The introduction of the GaN layer as the sub-quantum well turns the dominant transport mechanism of RTD from the 3D-2D model to the 2D-2D model and increases the energy difference between tunneling energy levels. It can also lower the effective height of the emitter barrier. Consequently, the peak current and peak-to-valley current difference of RTD have been increased. The optimal GaN sub-quantum well parameters are found through analyzing the electrical performance, energy band, and transmission coefficient of RTD with different widths and depths of the GaN sub-quantum well. The most pronounced electrical parameters, a peak current density of 5800 KA/cm2, a peak-to-valley current difference of 1.466 A, and a peak-to-valley current ratio of 6.35, could be achieved by designing RTD with the active region structure of GaN/Al0.2Ga0.8 N/GaN/Al0.2Ga0.8 N (3 nm/1.5 nm/1.5 nm/1.5 nm).

  6. Electronic Transport in Single Molecule Junctions: Control of the Molecule-Electrode Coupling Through Intramolecular Tunneling Barriers

    DEFF Research Database (Denmark)

    Danilov, Andrey; Kubatkin, Sergey; Kafanov, Sergey

    2008-01-01

    We report on single molecule electron transport measurements of two oligophenylenevinylene (OPV3) derivatives placed in a nanogap between gold (Au) or lead (Pb) electrodes in a field effect transistor device. Both derivatives contain thiol end groups that allow chemical binding to the electrodes...... to sequential tunneling and Coulomb blockade behavior....

  7. Development of Screen-Printed Texture-Barrier Paste for Single-Side Texturization of Interdigitated Back-Contact Silicon Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Chi-Cheng Chen

    2013-10-01

    Full Text Available Continuous cost reduction of silicon-based solar cells is needed to lower the process time and increase efficiency. To achieve lower costs, screen-printed texture-barrier (SPTB paste was first developed for single-side texturization (ST of the interdigitated back-contact (IBC for silicon-based solar cell applications. The SPTB paste was screen-printed on silicon substrates. The SPTB paste was synthesized from intermixed silicate glass (75 wt %, a resin binder (ethyl cellulose ethoce: 20 wt %, and a dispersing agent (fatty acid: 5 wt %. The silicate glass is a necessity for contact formation during firing. A resin binder and a dispersing agent determine the rheology of the SPTB paste. In this work, by modulating various parameters, including post SPTB firing, alkali texturing, and removal of the SPTB, the ST of IBC silicon solar cells was achieved. Since the advantages of the SPTB paste include low toxicity and prompt formation of the texture-barrier, SPTB is potentially suited for simple fabrication at low-cost for solar cell applications. The cost of the SPTB is around $100/kg which is lower than the SiH4/NH3 gas ambient used in plasma-enhanced chemical vapor deposition (PECVD. Thus, the expensive Si3N4 film deposited by PECVD using SiH4 and NH3 gas ambient for silicon solar cells can be replaced by this SPTB.

  8. Development of Screen-Printed Texture-Barrier Paste for Single-Side Texturization of Interdigitated Back-Contact Silicon Solar Cell Applications.

    Science.gov (United States)

    Chiu, Yu-Shun; Cheng, Chin-Lung; Whang, Thou-Jen; Chen, Chi-Cheng

    2013-10-17

    Continuous cost reduction of silicon-based solar cells is needed to lower the process time and increase efficiency. To achieve lower costs, screen-printed texture-barrier (SPTB) paste was first developed for single-side texturization (ST) of the interdigitated back-contact (IBC) for silicon-based solar cell applications. The SPTB paste was screen-printed on silicon substrates. The SPTB paste was synthesized from intermixed silicate glass (75 wt %), a resin binder (ethyl cellulose ethoce: 20 wt %), and a dispersing agent (fatty acid: 5 wt %). The silicate glass is a necessity for contact formation during firing. A resin binder and a dispersing agent determine the rheology of the SPTB paste. In this work, by modulating various parameters, including post SPTB firing, alkali texturing, and removal of the SPTB, the ST of IBC silicon solar cells was achieved. Since the advantages of the SPTB paste include low toxicity and prompt formation of the texture-barrier, SPTB is potentially suited for simple fabrication at low-cost for solar cell applications. The cost of the SPTB is around $100/kg which is lower than the SiH₄/NH₃ gas ambient used in plasma-enhanced chemical vapor deposition (PECVD). Thus, the expensive Si₃N₄ film deposited by PECVD using SiH₄ and NH₃ gas ambient for silicon solar cells can be replaced by this SPTB.

  9. Influence of pairing correlations on the probability and dynamics of tunneling through the barrier in fission and fusion of complex nuclei

    International Nuclear Information System (INIS)

    Lazarev, Yu.A.

    1986-01-01

    An analytically solvable model is used to study the potential barrier penetrability in the case when the gap parameter Δ is treated as a dynamical variable governed by the least action principle. It is found that, as compared to the standard (BCS) approach, the dynamical treatment of pairing results in a considerably weakened dependence of the fission barrier penetrability on the intensity of pairing correlations in the initial state (Δ 0 ), on the barrier height, and on the energy of the initial state. On this basis, a more adequate explanation is proposed for typical order-of-magnitude values of the empirical hidrance factors for groun-state spontaneous fission of odd nuclei. It is also shown that a large enhancement of superfluidity in tunneling - the inherent effect of the dynamical treatment of pairing - strongly facilitates deeply subbarier fusion of complex nuclei. Finally, an analysis is given for the probability of spontaneous fission from K-isomeric quasiparticle (q-p) states in even-even heavy nuclei. The relative change of the partial spontaneous fission half-life in going from the ground-state to a high-spin q-p isomeric state, T* sf /T sf , is found to be strongly dependent on whether or not there takes place the dynamically induced enhancement of superfluidity in tunneling. Measurements of T* sf /T sf provide thus a unique possibility of verifying theoretical predictions about the strong, inverse-square Δ dependence of the effective inertia associated with large-scale subbarrier rearrangements of nuclei

  10. Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal–oxide–nitride–oxide–silicon memory

    International Nuclear Information System (INIS)

    Liu, L.; Xu, J.P.; Chen, J.X.; Ji, F.; Huang, X.D.; Lai, P.T.

    2012-01-01

    A high-k gate stack structure with ultrathin HfON/SiO 2 as dual tunneling layer (DTL), AlN as charge storage layer (CSL) and HfAlO as blocking layer (BL) is proposed to make a charge-trapping-type metal–oxide–nitride–oxide–silicon non-volatile memory device by employing in-situ sputtering method. The validity of the structure is examined and confirmed by transmission electron microscopy. The memory window, program/erase, endurance and retention properties are investigated and compared with similar gate stack structure with Si 3 N 4 /SiO 2 as DTL, HfO 2 as CSL and Al 2 O 3 as BL. Results show that a large memory window of 3.55 V at a program/erase (P/E) voltage of + 8 V/− 15 V, high P/E speed, and good endurance and retention characteristic can be achieved using the Au/ HfAlO/AlN/(HfON/SiO 2 )/Si gate stack structure. The main mechanisms lie in the enhanced electron injection through the ultrathin high-k HfON/SiO 2 DTL with suitable band offset, high trapping efficiency of the high-k AlN material, and effective blocking role of the high-k HfAlO BL. - Highlights: ► An Au/HfAlO/AlN/(HfON/SiO 2 )/Si high-k gate stack structure is proposed. ► A band-engineered dual tunneling layer (HfON/SiO 2 ) is proposed and prepared. ► A good trade-off among the memory characteristics is obtained. ► In-situ sputtering method is employed to fabricate the gate stack structure.

  11. About tunnelling times

    International Nuclear Information System (INIS)

    Olkhovsky, V.S.; Recami, E.

    1991-08-01

    In this paper, first we critically analyse the main theoretical definitions and calculations of the sub-barrier tunnelling and reflection times. Secondly, we propose a new, physically sensible definition of such durations, on the basis of a recent general formalism (already tested for other types of quantum collisions). At last, we discuss some results regarding temporal evolution of the tunnelling processes, and in particular the ''particle'' speed during tunnelling. (author). 36 refs, 1 fig

  12. Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar Cells

    Directory of Open Access Journals (Sweden)

    Yang-Shin Lin

    2011-01-01

    Full Text Available The amorphous silicon/amorphous silicon (a-Si/a-Si tandem solar cells have attracted much attention in recent years, due to the high efficiency and low manufacturing cost compared to the single-junction a-Si solar cells. In this paper, the tandem cells are fabricated by high-frequency plasma-enhanced chemical vapor deposition (HF-PECVD at 27.1 MHz. The effects of the recombination layer and the i-layer thickness matching on the cell performance have been investigated. The results show that the tandem cell with a p+ recombination layer and i2/i1 thickness ratio of 6 exhibits a maximum efficiency of 9.0% with the open-circuit voltage (Voc of 1.59 V, short-circuit current density (Jsc of 7.96 mA/cm2, and a fill factor (FF of 0.70. After light-soaking test, our a-Si/a-Si tandem cell with p+ recombination layer shows the excellent stability and the stabilized efficiency of 8.7%.

  13. Funneling effect of alpha particles on the charge collection efficiency in N type silicon surface barrier detector

    International Nuclear Information System (INIS)

    Boorboor, S.; Feghhi, S.A.H.; Jafari, H.

    2014-01-01

    Highlights: • Field funneling due to SEE in microelectronic device affects the charge collection efficiency. • Charge collection efficiency from alpha particles in a N type SSB device was calculated. • GEANT4, a Monte Carlo code and ATLAS, a numerical code have been used. • The simulation results have been validated through comparison with the experimental results. - Abstract: There are three different mechanisms of charge collection in a semiconductor charge particle detector, such as the drift of carriers in depletion zone, the drift of carriers in an extended electrical field along the ion track or funneling effect and the diffusion of carriers. In this work, the funneling effect on charge collection efficiency due to alpha particle track in a N type silicon surface barrier detector has been investigated. GEANT4, as Monte Carlo code, has been used for estimation of the deposit energy distribution in the component. In addition, the semiconductor device simulator, ATLAS, has been used in calculation of charge collection efficiency. The simulation results have been validated through comparison with the available experimental results. The calculated charge collection efficiency has good agreement with experiment. Without considering the funneling effect and diffusion, the calculation results underestimate the charge collection efficiency within 60%. Our overall results were indicative of the fact that considering funneling effect, considerably improves the accuracy of the charge collection efficiency estimation

  14. Electric field strength in a silicon surface barrier detector with the presence of a dielectric plasma column

    International Nuclear Information System (INIS)

    Kanno, Ikuo

    1994-01-01

    The dynamic change of the electric field strength in a silicon surface barrier detector (SSBD) is studied. With the presence of a dielectric plasma column in the depletion layer of the SSBD, the electric field strength inside/outside the plasma column is suppressed/enhanced. As the length and the dielectric constant of the plasma column become shorter and smaller, the suppression and enhancement of the electric field strength become less. The electric field strength recovers the initial state, when the plasma column disappears. When the electrons and holes are inside/outside the dielectric plasma column, they have less/more electric potential than the one they have when there is no plasma column. During the movement of the electron/hole outside the plasma column to the positive/negative electrode, the enhanced electric field strength becomes smaller. Electron and hole pairs, which are the parts of the dielectric plasma column, arrive at positive and negative electrodes, having insufficient electric potential to induce the unit charge. This paper shows that the presence of a dielectric plasma column explains the main part of the residual defect in a SSBD. ((orig.))

  15. Absolute spectral characterization of silicon barrier diode: Application to soft X-ray fusion diagnostics at Tore Supra

    International Nuclear Information System (INIS)

    Vezinet, D.; Mazon, D.; Malard, P.

    2013-01-01

    This paper presents an experimental protocol for absolute calibration of photo-detectors. Spectral characterization is achieved by a methodology that unlike the usual line emissions-based method, hinges on the Bremsstrahlung radiation of a Soft X-Ray (SXR) tube only. Although the proposed methodology can be applied virtually to any detector, the application presented in this paper is based on Tore Supra's SXR diagnostics, which uses Silicon Surface Barrier Diodes. The spectral response of these n-p junctions had previously been estimated on a purely empirical basis. This time, a series of second-order effects, like the spatial distribution of the source radiated power or multi-channel analyser non linearity, are taken into account to achieve accurate measurements. Consequently, a parameterised physical model is fitted to experimental results and the existence of an unexpected dead layer (at least 5 μm thick) is evidenced. This contribution also echoes a more general on-going effort in favour of long-term quality of passive radiation measurements on Tokamaks

  16. Novel design of high voltage pulse source for efficient dielectric barrier discharge generation by using silicon diodes for alternating current

    Science.gov (United States)

    Truong, Hoa Thi; Hayashi, Misaki; Uesugi, Yoshihiko; Tanaka, Yasunori; Ishijima, Tatsuo

    2017-06-01

    This work focuses on design, construction, and optimization of configuration of a novel high voltage pulse power source for large-scale dielectric barrier discharge (DBD) generation. The pulses were generated by using the high-speed switching characteristic of an inexpensive device called silicon diodes for alternating current and the self-terminated characteristic of DBD. The operation started to be powered by a primary DC low voltage power supply flexibly equipped with a commercial DC power supply, or a battery, or DC output of an independent photovoltaic system without transformer employment. This flexible connection to different types of primary power supply could provide a promising solution for the application of DBD, especially in the area without power grid connection. The simple modular structure, non-control requirement, transformer elimination, and a minimum number of levels in voltage conversion could lead to a reduction in size, weight, simple maintenance, low cost of installation, and high scalability of a DBD generator. The performance of this pulse source has been validated by a load of resistor. A good agreement between theoretically estimated and experimentally measured responses has been achieved. The pulse source has also been successfully applied for an efficient DBD plasma generation.

  17. Thermo injecting electrical instability in the AlxGa1-xAs/GaAs heterostructures with tunnel-nontransparent potential barriers

    Science.gov (United States)

    Nikitov, S. A.; Maltsev, P. P.; Gergel, V. A.; Verhovtseva, A. V.; Gorshkova, N. M.; Pavlovskiy, V. V.; Minkin, V. S.; Trofimov, A. A.; Pavlov, A. Yu.; Khabibullin, R. A.

    2016-12-01

    Paper presents the results of research of electrical characteristics features of multibarrier AlxGa1-xAs/GaAs heterostructures with tunnel-nontransparent potential barriers. Briefly described constructive-technological features fabricated using molecular beam epitaxy. We measured the quasi-static current-voltage characteristics of test items by electric pulses of duration 10-6 s and a duty cycle of 103. Observed characteristics with a strong section of the negative differential resistance in the current range of several tens of milliampers. It is proposed to use this effect for the generation of terahertz electromagnetic radiation. Briefly stated the theoretical interpretation of the observed phenomena on the basis of quasi-hydrodynamic theory of electron drift.

  18. Evaluation of the first 100 consecutive PhacoFlex silicone lenses implanted in the bag through a self-sealing tunnel incision using the Prodigy inserter.

    Science.gov (United States)

    Menapace, R; Amon, M; Papapanos, P; Radax, U

    1994-05-01

    We evaluated the performance of the PhacoFlex silicone lens with open polypropylene loops and the disposable Prodigy inserter in a series of 100 consecutive no-stitch cases. Loading the lens into the PRO-1A inserter model was easy, as was inserting it through a 4 x 4 mm self-sealing sclerocorneal tunnel incision. If the chamber was deep and the capsular fornix expanded, unfolding the polypropylene loops was safe and direct bag placement was always possible. If the capsular bag was insufficiently distended, however, the posterior loop tended to entangle with wrinkles in the posterior capsule, jeopardizing the capsule's integrity. With a round and well-centered 4 mm to 5 mm capsulorhexis, centration was good provided the lens was completely within the bag. Even with proper bag placement of the haptics, however, the optic occasionally decentered slightly and tilted because of secondary capture in the capsulorhexis opening. With an incomplete capsulorhexis or a jagged-edged capsulotomy, malpositioning was not uncommon. This was due to secondary displacement of one haptic into the sulcus or partial capture of the optic by the anterior capsule leaf. Because of the flexibility of the polypropylene loops, the lenses tended to decenter and tilt following capsular shrinkage.

  19. Transport properties of Josephson contacts with ferromagnetic tunnel barriers; Transporteigenschaften von Josephson-Kontakten mit ferromagnetischer Tunnelbarriere

    Energy Technology Data Exchange (ETDEWEB)

    Sprungmann, Dirk

    2010-01-28

    The combination of the Josephson and the proximity effect is possible by the introduction of a ferromagnetic barrier into a Josephson contact resulting in a so called π coupling. The supra current through these contacts is flowing in the reverse direction. Specific new electronic circuits such as phase shifting devices are possible, for instance for high-speed analog-digital transducers. In the frame of this thesis SIFS Josephson contacts were studied, with a barrier consisting of a thin insulating Al2Ox barrier layer and a ferromagnetic thin film. For the ferromagnetic material weak ferromagnetic Ni(0.6)Cu(0.4), the strong ferromagnetic Fe(0.25)Co(0.75) and the ternary Heusler alloys Co2MnSn and Cu2MnAl were used. Josephson contacts with π coupling were realized with the NiCu alloy, triplet superconductivity seems to appear with the Heusler systems.

  20. Fabrication and characterization of surface barrier detector from commercial silicon substrate; Fabricacao e caracterizacao de detector de barreira de superficie a partir de substrato de silicio comercial

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Julio Batista Rodrigues

    2016-10-01

    In this work it was developed radiation detectors silicon surface barrier that were capable of detecting the presence of gamma radiation from a low energy of iodine-125 seeds used in brachytherapy treatments. >From commercial silicon substrates detectors were developed, one sequence left of chemical treatments to the surfaces of these substrates with the intention of minimizing the possible noise generated, validation of the samples obtained as diodes, ensuring detector characteristics and effective use as detector for Iodine-125 radioactive sources with energy of about 25 keV and Americium-251 with energy on the order of 59 keV. Finished performing the analysis of the obtained energy spectra and so it was possible to observe the ability of these detectors to measure the energy from these seeds. (author)

  1. Grain boundary engineering of La{sub 0.7} Sr{sub 0.3} MnO{sub 3} films on silicon substrate: Scanning Tunneling Microscopy-Spectroscopy study

    Energy Technology Data Exchange (ETDEWEB)

    Joshi, Anupama [Department of Applied Physics, Defence Institute of Advanced Technology (DU), Girinagar, Pune 411025 (India); Nori, Rajashree [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology (IIT Bombay), Mumbai 400076 (India); Dhobale, Sandip [Department of Applied Physics, Defence Institute of Advanced Technology (DU), Girinagar, Pune 411025 (India); Ramgopal Rao, V. [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology (IIT Bombay), Mumbai 400076 (India); Kale, S.N., E-mail: sangeetakale2004@gmail.com [Department of Applied Physics, Defence Institute of Advanced Technology (DU), Girinagar, Pune 411025 (India); Datar, Suwarna, E-mail: suwarna.datar@gmail.com [Department of Applied Physics, Defence Institute of Advanced Technology (DU), Girinagar, Pune 411025 (India)

    2014-09-01

    We employed a Scanning Tunnelling Microscope (STM) to study the surface topography and spatially resolved local electronic properties like local density of states (LDOS) of nanostructured films of La{sub 0.7} Sr{sub 0.3} MnO{sub 3} (LSMO). The nanostructured thin films of LSMO on silicon substrate were prepared using Pulsed Laser Deposition (PLD) technique. The deposition conditions were tuned to yield two different morphologies; one with uniform columnar closely packed islands and other with larger grain distribution in random fashion. The Scanning Tunnelling Spectroscopy (STS) revealed the extent of variation of density of states (DOS) near the Fermi level. From the spectroscopic features obtained we found the occurrence of phase separation between conducting and semiconducting domains and its possible correlation with the properties of the system. Semiconducting nature was observed at the grain boundaries, which could be extremely promising in futuristic nano-devices.

  2. Band-gap dependence of field emission from one-dimensional nanostructures grown on n-type and p-type silicon substrates

    Science.gov (United States)

    Chang, C. S.; Chattopadhyay, S.; Chen, L. C.; Chen, K. H.; Chen, C. W.; Chen, Y. F.; Collazo, R.; Sitar, Z.

    2003-09-01

    Field emission of electrons from narrow-band-gap and wide-band-gap one-dimensional nanostructures were studied. N-type silicon substrates enhanced the emission from the low-band-gap silicon nanowires and carbon nanotubes, whereas p-type substrates were a better choice for field emission from wide-band-gap silicon carbon nitride nanocrystalline thin films and nanorods. The role of the substrate-nanostructure interface was modeled based on different junction mechanisms to explain, qualitatively, the fundamentally different emission behavior of these nanostructures when n- and p-type silicon substrates were used. The results could be explained on the basis of simple carrier transport across the silicon-silicon nanowire interface and subsequent tunneling of electrons for the silicon nanowires. Schottky barrier theory can explain the better field emission of electrons from the n-type silicon supported carbon nanotubes. The decreased barrier height at the interface of the silicon-silicon carbon nitride heterojunction, when p-type silicon substrate was used, could explain the superior field emission in comparison to when n-type silicon substrates were used.

  3. Electroluminescence from single nanowires by tunnel injection: an experimental study

    Science.gov (United States)

    Zimmler, Mariano A.; Bao, Jiming; Shalish, Ilan; Yi, Wei; Yoon, Joonah; Narayanamurti, Venkatesh; Capasso, Federico

    2007-06-01

    We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure.

  4. Influence of average ion energy and atomic oxygen flux per Si atom on the formation of silicon oxide permeation barrier coatings on PET

    Science.gov (United States)

    Mitschker, F.; Wißing, J.; Hoppe, Ch; de los Arcos, T.; Grundmeier, G.; Awakowicz, P.

    2018-04-01

    The respective effect of average incorporated ion energy and impinging atomic oxygen flux on the deposition of silicon oxide (SiO x ) barrier coatings for polymers is studied in a microwave driven low pressure discharge with additional variable RF bias. Under consideration of plasma parameters, bias voltage, film density, chemical composition and particle fluxes, both are determined relative to the effective flux of Si atoms contributing to film growth. Subsequently, a correlation with barrier performance and chemical structure is achieved by measuring the oxygen transmission rate (OTR) and by performing x-ray photoelectron spectroscopy. It is observed that an increase in incorporated energy to 160 eV per deposited Si atom result in an enhanced cross-linking of the SiO x network and, therefore, an improved barrier performance by almost two orders of magnitude. Furthermore, independently increasing the number of oxygen atoms to 10 500 per deposited Si atom also lead to a comparable barrier improvement by an enhanced cross-linking.

  5. Tunneling anisotropic magnetoresistance in Co/AIOx/Al tunnel junctions with fcc Co (111) electrodes

    NARCIS (Netherlands)

    Wang, Kai; Tran, T. Lan Ahn; Brinks, Peter; Brinks, P.; Sanderink, Johannes G.M.; Bolhuis, Thijs; van der Wiel, Wilfred Gerard; de Jong, Machiel Pieter

    2013-01-01

    Tunneling anisotropic magnetoresistance (TAMR) has been characterized in junctions comprised of face-centered cubic (fcc) Co (111) ferromagnetic electrodes grown epitaxially on sapphire substrates, amorphous AlOx tunnel barriers, and nonmagnetic Al counterelectrodes. Large TAMR ratios have been

  6. Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire

    Science.gov (United States)

    Pierre, M.; Roche, B.; Wacquez, R.; Jehl, X.; Sanquer, M.; Vinet, M.

    2011-04-01

    We present a systematic study of various ways (top gates, local doping, substrate bias) to fabricate and tune multi-dot structures in silicon nanowire multigate metal-oxide-semiconductor field-effect transistors. The carrier concentration profile of the silicon nanowire is a key parameter to control the formation of tunnel barriers and single-electron islands. It is determined both by the doping profile of the nanowire and by the voltages applied to the top gates and to the substrate. Local doping is achieved with the realization of up to two arsenic implantation steps in combination with gates and nitride spacers acting as a mask. We compare nominally identical devices with different implantations and different voltages applied to the substrate, leading to the realization of both intrinsic and doped coupled dot structures. We demonstrate devices in which all the tunnel resistances toward the electrodes and between the dots can be independently tuned with the control top gates wrapping the silicon nanowire.

  7. Thermovoltages in vacuum tunneling investigated by scanning tunneling microscopy

    OpenAIRE

    Hoffmann, D. H.; Rettenberger, Armin; Grand, Jean Yves; Läuger, K.; Leiderer, Paul; Dransfeld, Klaus; Möller, Rolf

    1995-01-01

    By heating the tunneling tip of a scanning tunneling microscope the thermoelectric properties of a variable vacuum barrier have been investigated. The lateral variation of the observed thermovoltage will be discussed for polycrystalline gold, stepped surfaces of silver, as well as for copper islands on silver.

  8. Palladium electrodes for molecular tunnel junctions

    International Nuclear Information System (INIS)

    Chang Shuai; Sen Suman; Zhang Peiming; Gyarfas, Brett; Ashcroft, Brian; Lindsay, Stuart; Lefkowitz, Steven; Peng Hongbo

    2012-01-01

    Gold has been the metal of choice for research on molecular tunneling junctions, but it is incompatible with complementary metal–oxide–semiconductor fabrication because it forms deep level traps in silicon. Palladium electrodes do not contaminate silicon, and also give higher tunnel current signals in the molecular tunnel junctions that we have studied. The result is cleaner signals in a recognition-tunneling junction that recognizes the four natural DNA bases as well as 5-methyl cytosine, with no spurious background signals. More than 75% of all the recorded signal peaks indicate the base correctly. (paper)

  9. Application of a double-sided silicon-strip detector as a differential pumping barrier for NESR experiments at FAIR

    NARCIS (Netherlands)

    Streicher, B.; Egelhof, P.; Ilieva, S.; Kalantar-Nayestanaki, N.; Kollmus, H.; Kroell, Th; Mutterer, M.; von Schmid, M.; Traeger, M.

    2011-01-01

    The presented work focuses on the development of a differential pumping system using double-sided silicon-strip detectors to separate the ultra-high vacuum of a storage ring from subsequent detectors and outgassing components placed in an auxiliary vacuum. Such a technical concept will give the

  10. Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Altuhov, V. I., E-mail: altukhovv@mail.ru; Kasyanenko, I. S.; Sankin, A. V. [North Caucasian Federal University, Institute of Service, Tourism and Design (Branch) (Russian Federation); Bilalov, B. A. [Dagestan State Technical University (Russian Federation); Sigov, A. S. [Moscow State Technical University of Radio Engineering, Electronics, and Automation (Russian Federation)

    2016-09-15

    A simple but nonlinear model of the defect density at a metal–semiconductor interface, when a Schottky barrier is formed by surface defects states localized at the interface, is developed. It is shown that taking the nonlinear dependence of the Fermi level on the defect density into account leads to a Schottky barrier increase by 15–25%. The calculated barrier heights are used to analyze the current–voltage characteristics of n-M/p-(SiC){sub 1–x}(AlN){sub x} structures. The results of calculations are compared to experimental data.

  11. Silicon Carbide Semiconductor Surface Dielectric Barrier Discharge (SSDBD) Device for Turbulent Skin Friction Drag Reduction and Flow Control Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed research effort explores the use of a nanosecond pulse driven offset semiconducting surface dielectric barrier discharge (SSDBD) device for the control...

  12. Quantum tunneling with friction

    Science.gov (United States)

    Tokieda, M.; Hagino, K.

    2017-05-01

    Using the phenomenological quantum friction models introduced by P. Caldirola [Nuovo Cimento 18, 393 (1941), 10.1007/BF02960144] and E. Kanai [Prog. Theor. Phys. 3, 440 (1948), 10.1143/ptp/3.4.440], M. D. Kostin [J. Chem. Phys. 57, 3589 (1972), 10.1063/1.1678812], and K. Albrecht [Phys. Lett. B 56, 127 (1975), 10.1016/0370-2693(75)90283-X], we study quantum tunneling of a one-dimensional potential in the presence of energy dissipation. To this end, we calculate the tunneling probability using a time-dependent wave-packet method. The friction reduces the tunneling probability. We show that the three models provide similar penetrabilities to each other, among which the Caldirola-Kanai model requires the least numerical effort. We also discuss the effect of energy dissipation on quantum tunneling in terms of barrier distributions.

  13. Ultrafast scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Botkin, D.A. [California Univ., Berkeley, CA (United States). Dept. of Physics]|[Lawrence Berkeley Lab., CA (United States)

    1995-09-01

    I have developed an ultrafast scanning tunneling microscope (USTM) based on uniting stroboscopic methods of ultrafast optics and scanned probe microscopy to obtain nanometer spatial resolution and sub-picosecond temporal resolution. USTM increases the achievable time resolution of a STM by more than 6 orders of magnitude; this should enable exploration of mesoscopic and nanometer size systems on time scales corresponding to the period or decay of fundamental excitations. USTM consists of a photoconductive switch with subpicosecond response time in series with the tip of a STM. An optical pulse from a modelocked laser activates the switch to create a gate for the tunneling current, while a second laser pulse on the sample initiates a dynamic process which affects the tunneling current. By sending a large sequence of identical pulse pairs and measuring the average tunnel current as a function of the relative time delay between the pulses in each pair, one can map the time evolution of the surface process. USTM was used to measure the broadband response of the STM`s atomic size tunnel barrier in frequencies from tens to hundreds of GHz. The USTM signal amplitude decays linearly with the tunnel junction conductance, so the spatial resolution of the time-resolved signal is comparable to that of a conventional STM. Geometrical capacitance of the junction does not appear to play an important role in the measurement, but a capacitive effect intimately related to tunneling contributes to the measured signals and may limit the ultimate resolution of the USTM.

  14. On-demand Antimicrobial Treatment with Antibiotic-Loaded Porous Silicon Capped with a pH-Responsive Dual Plasma Polymer Barrier.

    Science.gov (United States)

    Vasani, Roshan B; Szili, Endre J; Rajeev, Gayathri; Voelcker, Nicolas H

    2017-07-04

    Chronic wounds are a major socio-economic problem. Bacterial infections in such wounds are a major contributor to lack of wound healing. An early indicator of wound infection is an increase in pH of the wound fluid. Herein, we describe the development of a pH-responsive drug delivery device that can potentially be used for wound decontamination in situ and on-demand in response to an increase in the pH of the wound environment. The device is based on a porous silicon film that provides a reservoir for encapsulation of an antibiotic within the pores. Loaded porous silicon is capped with dual plasma polymer layers of poly(1,7-octadiene) and poly(acrylic acid), which provide a pH-responsive barrier for on-demand release of the antibiotic. We demonstrate that release of the antibiotic is inhibited in aqueous buffer at pH 5, whereas the drug is released in a sustainable manner at pH 8. Importantly, the released drug was bacteriostatic against the Pseudomonas aeruginosa wound pathogen. In the future, incorporation of the delivery device into wound dressings could potentially be utilized for non-invasive decontamination of wounds. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient.

    Science.gov (United States)

    Barreda, Jorge L; Keiper, Timothy D; Zhang, Mei; Xiong, Peng

    2017-04-05

    In comparison to conventional (channel-limited) field-effect transistors (FETs), Schottky barrier-limited FETs possess some unique characteristics which make them attractive candidates for some electronic and sensing applications. Consequently, modulation of the nano Schottky barrier at a metal-semiconductor interface promises higher performance for chemical and biomolecular sensor applications when compared to conventional FETs with ohmic contacts. However, the fabrication and optimization of devices with a combination of ideal ohmic and Schottky contacts as the source and drain, respectively, present many challenges. We address this issue by utilizing Si nanowires (NWs) synthesized by a chemical vapor deposition process which yields a pronounced doping gradient along the length of the NWs. Devices with a series of metal contacts on a single Si NW are fabricated in a single lithography and metallization process. The graded doping profile of the NW is manifested in monotonic increases in the channel and junction resistances and variation of the nature of the contacts from ohmic to Schottky of increasing effective barrier height along the NW. Hence multiple single Schottky junction-limited FETs with extreme asymmetry and high reproducibility are obtained on an individual NW. A definitive correlation between increasing Schottky barrier height and enhanced gate modulation is revealed. Having access to systematically varying Schottky barrier contacts on the same NW device provides an ideal platform for identifying optimal device characteristics for sensing and electronic applications.

  16. Development and Property Evaluation of Selected HfO2-Silicon and Rare Earth-Silicon Based Bond Coats and Environmental Barrier Coating Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming

    2016-01-01

    Ceramic environmental barrier coatings (EBC) and SiC/SiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiC/SiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si and rare earth Si based EBC bond coat EBC systems for SiC/SiC CMC combustor and turbine airfoil applications are investigated. High temperature properties of the advanced EBC systems, including the strength, fracture toughness, creep and oxidation resistance have been studied and summarized. The advanced NASA EBC systems showed some promise to achieve 1500C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and durability.

  17. Simple and controlled single electron transistor based on doping modulation in silicon nanowires

    Science.gov (United States)

    Hofheinz, M.; Jehl, X.; Sanquer, M.; Molas, G.; Vinet, M.; Deleonibus, S.

    2006-10-01

    A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel of the transistor is the Coulomb island at low temperature. Two silicon nitride spacers deposited on each side of the gate create a modulation of doping along the nanowire that creates tunnel barriers. Such barriers are fixed and controlled, like in metallic SETs. The period of the Coulomb oscillations is set by the gate capacitance of the transistor and therefore controlled by lithography. The source and drain capacitances have also been characterized. This design could be used to build more complex SET devices.

  18. Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

    Energy Technology Data Exchange (ETDEWEB)

    Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

    2017-07-01

    We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

  19. Study of selective amorphous silicon etching to silicon nitride using a pin-to-plate dielectric barrier discharge in atmospheric pressure

    Science.gov (United States)

    Kyung, Se-Jin; Park, Jae-Beom; Lee, June-Hee; Lim, Jong-Tae; Yeom, Geun-Young

    2007-08-01

    Remote-type atmospheric pressure plasmas were generated using a modified dielectric barrier discharge with the powered electrode consisting of multipins instead of a conventional blank planar plate. For the N2/NF3 gas mixture, a high etch rate of a :Si close to 115nm/s was obtained by adding 300SCCM (SCCM denotes cubic centimeter per minute at STP) of NF3 to N2 [50SLM (standard liters per minute)] at an ac rms voltage of 8.5kV (2.5kW, 30kHz). However, the selectivity of a :Si to Si3N4 was as low as 1.3. A selectivity of a :Si/Si3N4>5.0 could be obtained while maintaining an etch rate of a :Si at 110nm/s by adding 250SCCM CF4 to the N2 (50SLM )/NF3 (300SCCM) mixture through the formation of a C-F polymer layer preferentially on the Si3N4 surface.

  20. Apparent tunneling in chemical reactions

    DEFF Research Database (Denmark)

    Henriksen, Niels Engholm; Hansen, Flemming Yssing; Billing, G. D.

    2000-01-01

    A necessary condition for tunneling in a chemical reaction is that the probability of crossing a barrier is non-zero, when the energy of the reactants is below the potential energy of the barrier. Due to the non-classical nature (i.e, momentum uncertainty) of vibrational states this is, however...

  1. Effect of argon ion energy on the performance of silicon nitride multilayer permeation barriers grown by hot-wire CVD on polymers

    International Nuclear Information System (INIS)

    Alpuim, P.; Majee, S.; Cerqueira, M.F.; Tondelier, D.; Geffroy, B.; Bonnassieux, Y.; Bourée, J.E.

    2015-01-01

    Permeation barriers for organic electronic devices on polymer flexible substrates were realized by combining stacked silicon nitride (SiN x ) single layers (50 nm thick) deposited by hot-wire chemical vapor deposition process at low-temperature (~ 100°°C) with a specific argon plasma treatment between two successive layers. Several plasma parameters (RF power density, pressure, treatment duration) as well as the number of single layers have been explored in order to improve the quality of permeation barriers deposited on polyethylene terephthalate. In this work, maximum ion energy was highlighted as the crucial parameter making it possible to minimize water vapor transmission rate (WVTR), as determined by the electrical calcium test method, all the other parameters being kept fixed. Thus fixing the plasma treatment duration at 8 min for a stack of two SiN x single layers, a minimum WVTR of 5 × 10 −4 g/(m 2 day), measured at room temperature, was found for a maximum ion energy of ~ 30 eV. This minimum WVTR value was reduced to 7 × 10 −5 g/(m 2 day) for a stack of five SiN x single layers. The reduction in the permeability is interpreted as due to the rearrangement of atoms at the interfaces when average transferred ion energy to target atoms exceeds threshold displacement energy. - Highlights: • Αn original way to achieve permeation barriers on polymer substrates is developed. • It combines SiN x multilayers grown by HWCVD with an intermediate Ar plasma treatment. • A minimum of water vapor transmission rate is found related to maximum Ar ion energy. • This minimum is due to atomic rearrangement in SiN x interfaces under the impact of ions. • The average Ar ion energy must exceed atomic threshold displacement energy for Si.

  2. Valence band offset and Schottky barrier at amorphous boron and boron carbide interfaces with silicon and copper

    Science.gov (United States)

    King, Sean W.; French, Marc; Xu, Guanghai; French, Benjamin; Jaehnig, Milt; Bielefeld, Jeff; Brockman, Justin; Kuhn, Markus

    2013-11-01

    In order to understand the fundamental charge transport in a-B:H and a-BX:H (X = C, N, P) compound heterostructure devices, X-ray photoelectron spectroscopy has been utilized to determine the valence band offset and Schottky barrier present at amorphous boron compound interfaces formed with (1 0 0) Si and polished poly-crystalline Cu substrates. For interfaces formed by plasma enhanced chemical vapor deposition of a-B4-5C:H on (1 0 0) Si, relatively small valence band offsets of 0.2 ± 0.2 eV were determined. For a-B:H/Cu interfaces, a more significant Schottky barrier of 0.8 ± 0.16 eV was measured. These results are in contrast to those observed for a-BN:H and BP where more significant band discontinuities (>1-2 eV) were observed for interfaces with Si and Cu.

  3. Permeation barrier performance of Hot Wire-CVD grown silicon-nitride films treated by argon plasma

    International Nuclear Information System (INIS)

    Majee, S.; Cerqueira, M.F.; Tondelier, D.; Vanel, J.C.; Geffroy, B.; Bonnassieux, Y.; Alpuim, P.; Bourée, J.E.

    2015-01-01

    In this work SiN x thin films have been deposited by Hot-Wire Chemical Vapor Deposition (HW-CVD) technique to be used as encapsulation barriers for flexible organic electronic devices fabricated on polyethylene terephthalate (PET) substrates. First results of SiN x multilayers stacked and stacks of SiN x single-layers (50 nm each) separated by an Ar-plasma surface treatment are reported. The encapsulation barrier properties of these different multilayers are assessed using the electrical calcium degradation test by monitoring changes in the electrical conductance of encapsulated Ca sensors with time. The water vapor transmission rate is found to be slightly minimized (7 × 10 −3 g/m 2 day) for stacked SiN x single-layers exposed to argon plasma treatment during a short time (2 min) as compared to that for stacked SiN x single-layers without Ar plasma treatment. - Highlights: • SiN x films are grown using HW-CVD to be used as permeation barrier layer. • Ar plasma treatment is made between two successive SiN x films. • Electrical calcium degradation test is used to evaluate the WVTR values. • Lowest WVTR value of ~ 7 × 10 -3 g/m 2 .day is reported

  4. Evaluation of Schottky and MgO-based tunnelling diodes with different ferromagnets for spin injection in n-Si

    International Nuclear Information System (INIS)

    Uhrmann, T; Dimopoulos, T; Brueckl, H; Kovacs, A; Kohn, A; Weyers, S; Paschen, U; Smoliner, J

    2009-01-01

    In this work we present the electrical properties of sputter-deposited ferromagnetic (FM) Schottky diodes and MgO-based tunnelling diodes to n-doped (0 0 1) silicon. The effective Schottky barrier height (SBH) has been evaluated as a function of the FM electrode (Co 70 Fe 30 , Co 40 Fe 40 B 20 and Ni 80 Fe 20 ), the silicon doping density (10 15 to 10 18 cm -3 ), the MgO tunnelling barrier thickness (0, 1.5 and 2.5 nm) and post-deposition annealing up to 400 0 C. The ideality factors of the Schottky diodes are close to unity, indicating transport by thermionic emission and the absence of an interfacial oxide layer, which is confirmed by transmission electron microscopy. The effective SBH is found to be approximately 0.65 eV, independent of the FM material and decreasing with increasing doping density. The changes induced by high temperature annealing at the current-voltage characteristic of the Schottky diodes depend strongly on the FM electrode. The effective SBH for the tunnelling diodes is as low as 0.3 eV, which suggests a high density of oxide and interface traps. It is again independent of the FM electrode, decreasing with increasing doping density and annealing temperature. The inclusion of MgO leads to higher thermal stability of the tunnelling diodes. The measured contact resistance values are discussed with respect to the conductivity mismatch for spin injection and detection.

  5. Tunneling Flight Time, Chemistry, and Special Relativity.

    Science.gov (United States)

    Petersen, Jakob; Pollak, Eli

    2017-09-07

    Attosecond ionization experiments have not resolved the question "What is the tunneling time?". Different definitions of tunneling time lead to different results. Second, a zero tunneling time for a material particle suggests that the nonrelativistic theory includes speeds greater than the speed of light. Chemical reactions, occurring via tunneling, should then not be considered in terms of a nonrelativistic quantum theory calling into question quantum dynamics computations on tunneling reactions. To answer these questions, we define a new experimentally measurable paradigm, the tunneling flight time, and show that it vanishes for scattering through an Eckart or a square barrier, irrespective of barrier length or height, generalizing the Hartman effect. We explain why this result does not lead to experimental measurement of speeds greater than the speed of light. We show that this tunneling is an incoherent process by comparing a classical Wigner theory with exact quantum mechanical computations.

  6. Graphene-Al2O3-silicon heterojunction solar cells on flexible silicon substrates

    Science.gov (United States)

    Ahn, Jaehyun; Chou, Harry; Banerjee, Sanjay K.

    2017-04-01

    The quest of obtaining sustainable, clean energy is an ongoing challenge. While silicon-based solar cells have widespread acceptance in practical commercialization, continuous research is important to expand applicability beyond fixed-point generation to other environments while also improving power conversion efficiency (PCE), stability, and cost. In this work, graphene-on-silicon Schottky junction and graphene-insulator-silicon (GIS) solar cells are demonstrated on flexible, thin foils, which utilize the electrical conductivity and optical transparency of graphene as the top transparent contact. Multi-layer graphene was grown by chemical vapor deposition on Cu-Ni foils, followed by p-type doping with Au nanoparticles and encapsulated in poly(methyl methacrylate), which showed high stability with minimal performance degradation over more than one month under ambient conditions. Bendable silicon film substrates were fabricated by a kerf-less exfoliation process based on spalling, where the silicon film thickness could be controlled from 8 to 35 μm based on the process recipe. This method allows for re-exfoliation from the parent Si wafer and incorporates the process for forming the backside metal contact of the solar cell. GIS cells were made with a thin insulating Al2O3 atomic layer deposited film, where the thin Al2O3 film acts as a tunneling barrier for holes, while simultaneously passivating the silicon surface, increasing the minority carrier lifetime from 2 to 27 μs. By controlling the Al2O3 thickness, an optimized cell with 7.4% power conversion efficiency (PCE) on a 35 μm thick silicon absorber was fabricated.

  7. A novel method to achieve selective emitter for silicon solar cell using low cost pattern-able a-Si thin films as the semi-transparent phosphorus diffusion barrier

    International Nuclear Information System (INIS)

    Chen, Da Ming; Liang, Zong Cun; Zhuang, Lin; Lin, Yang Huan; Shen, Hui

    2012-01-01

    Highlights: ► a-Si thin films as semitransparent phosphorus diffusion barriers for solar cell. ► a-Si thin films on silicon wafers were patterned by the alkaline solution. ► Selective emitter was formed with patterned a-Si as diffusion barrier for solar cell. -- Abstract: Selective emitter for silicon solar cell was realized by employing a-Si thin films as the semi-transparent diffusion barrier. The a-Si thin films with various thicknesses (∼10–40 nm) were deposited by the electron-beam evaporation technique. Emitters with sheet resistances from 37 to 145 Ω/□ were obtained via POCl 3 diffusion process. The thickness of the a-Si diffusion barrier was optimized to be 15 nm for selective emitter in our work. Homemade mask which can dissolve in ethanol was screen-printed on a-Si film to make pattern. The a-Si film was then patterned in KOH solution to form finger-like design. Selective emitter was obtainable with one-step diffusion with patterned a-Si film on. Combinations of sheet resistances for the high-/low-level doped regions of 39.8/112.1, 36.2/88.8, 35.4/73.9 were obtained. These combinations are suitable for screen-printed solar cells. This preparation method of selective emitter based on a-Si diffusion barrier is a promising approach for low cost industrial manufacturing.

  8. Effects of argon and oxygen flow rate on water vapor barrier properties of silicon oxide coatings deposited on polyethylene terephthalate by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Kim, Sung-Ryong; Choudhury, Moinul Haque; Kim, Won-Ho; Kim, Gon-Ho

    2010-01-01

    Plasma polymer coatings were deposited from hexamethyldisiloxane on polyethylene terephthalate (PET) substrates while varying the operating conditions, such as the Ar and O 2 flow rates, at a fixed radio frequency power of 300 W. The water vapor transmission rate (WVTR) of the untreated PET was 54.56 g/m 2 /day and was decreased after depositing the silicon oxide (SiO x ) coatings. The minimum WVTR, 0.47 g/m 2 /day, was observed at Ar and O 2 flow rates of 4 and 20 sccm, respectively, with a coating thickness of 415.44 nm. The intensity of the peaks for the Si-O-Si bending at 800-820 cm -1 and Si-O-Si stretching at 1000-1150 cm -1 varied depending on the Ar and O 2 flow rates. The contact angle of the SiO x coated PET increased as the Ar flow rate was increased from 2 to 8 sccm at a fixed O 2 flow rate of 20 sccm. It decreased gradually as the oxygen flow rate increased from 12 to 28 sccm at a fixed Ar carrier gas flow rate. The examination by atomic force microscopy revealed a correlation of the SiO x morphology and the water vapor barrier performance with the Ar and O 2 flow rates. The roughness of the deposited coatings increased when either the O 2 or Ar flow rate was increased.

  9. Tunneling Ionization of Diatomic Molecules

    DEFF Research Database (Denmark)

    Svensmark, Jens Søren Sieg

    2016-01-01

    When a molecule is subject to a strong laser field, there is a probability that an electron can escape, even though the electrons are bound by a large potential barrier. This is possible because electrons are quantum mechanical in nature, and they are therefore able to tunnel through potential...... of tunneling ionizaion of molecules is presented and the results of numerical calculations are shown. One perhaps surprising result is, that the frequently used Born-Oppenheimer approximation breaks down for weak fields when describing tunneling ionization. An analytic theory applicable in the weak-field limit...

  10. Vertical Silicon Nanowire Diode with Nickel Silicide Induced Dopant Segregation

    Science.gov (United States)

    Lu, Weijie; Pey, Kin Leong; Wang, Xinpeng; Li, Xiang; Chen, Zhixian; Navab, Singh; Chew Leong, Kam; Lip Gan, Chee; Tan, Chuan Seng

    2012-11-01

    Dopant segregated Schottky barrier (DSSB) and Schottky barrier (SB) vertical silicon nanowire (VSiNW) diodes were fabricated using industry complemetary metal oxide semiconductor field effect transistor (CMOS) processes to investigate the effects of segregated dopants at the silicide/silicon interface and different annealing steps on nickel silicide formation in the DSSB VSiNW diodes. With segregated dopants at the silicide/silicon interface, VSiNW diodes showed higher on-current, due to an enhanced carrier tunneling, and much lower off-current. This can be attributed to the altered energy bands caused by the accumulated Arsenic dopants at the interface. Moreover, DSSB VSiNW diodes also presented ideality factor much closer to unity and exhibited lower electron Schottky barrier height (ΦBn) than SB VSiNW diodes. This proved that interfacial accumulated dopants could impede the inhomogeneous nature of the Schottky diodes and simultaneously, minimize the effect of Fermi level pinning and ionization of surface defect states. Comparing the impact of different silicide formation annealing sequence using DSSB VSiNW diodes, the 2-step anneal process reduces the silicide intrusion length within the SiNW by ˜5× and the silicide interface was smooth along the (100) direction. Furthermore, the 2-step DSSB VSiNW diode also exhibited much lower leakage current and an ideality factor much closer to unity, as compared to the 1-step DSSB VSiNW diode.

  11. Fabrication of Al/MgO/C and C/MgO/InSe/C tunneling barriers for tunable negative resistance and negative capacitance applications

    Energy Technology Data Exchange (ETDEWEB)

    Qasrawi, A.F., E-mail: aqasrawi@aauj.edu [Group of Physics, Faculty of Engineering, Atilim University, 06836 Ankara (Turkey); Department of Physics, Arab-American University, Jenin, West Bank, Palestine (Country Unknown)

    2013-07-01

    Highlights: • Aluminum and indium selenide thin films are used to design MgO tunneling diodes. • The Al/MgO/C and C/MgO/InSe/C tunneling diode structures are characterized. • The C/MgO/InSe/C device exhibited a peak to valley current ratio of 135. • It reflected negative resistance effect in the voltage range of 0.94–2.24. • A resonance peak located at 39 MHz was observed. -- Abstract: In this work, the design and characterization of magnesium oxide based tunneling diodes which are produced on Al and InSe films as rectifying substrates are investigated. It was found that when Al thin films are used, the device exhibit tunneling diode behavior of sharp valley at 0.15 V and peak to valley current ratio (PVCR) of 11.4. In addition, the capacitance spectra of the Al/MgO/C device show a resonance peak of negative capacitance (NC) values at 44.7 MHz. The capacitance and resistance–voltage characteristics handled at an ac signal frequency of 100 MHz reflected a build in voltage (V{sub bi}) of 1.29 V and a negative resistance (NR) effect above 2.05 V. This device quality factor (Q)–voltage response is ∼10{sup 4}. When the Al substrate is replaced by InSe thin film, the tunneling diode valley appeared at 1.1 V. In addition, the PVCR, NR range, NC resonance peak, Q and V{sub bi} are found to be 135, 0.94–2.24 and 39.0 MHz, ∼10{sup 5} and 1.34 V, respectively. Due to the wide differential negative resistance and capacitance voltage ranges and due to the response of the C/MgO/InSe/C device at 1.0 GHz, these devices appear to be suitable for applications as frequency mixers, amplifiers, and monostable–bistable circuit elements (MOBILE)

  12. Superpoissonian shot noise in organic magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Cascales, Juan Pedro; Martinez, Isidoro; Aliev, Farkhad G., E-mail: farkhad.aliev@uam.es [Dpto. Fisica Materia Condensada C3, Instituto Nicolas Cabrera (INC), Condensed Matter Physics Institute (IFIMAC), Universidad Autonoma de Madrid, Madrid 28049 (Spain); Hong, Jhen-Yong; Lin, Minn-Tsong, E-mail: mtlin@phys.ntu.edu.tw [Department of Physics, National Taiwan University, Taipei 10617, Taiwan and Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Szczepański, Tomasz; Dugaev, Vitalii K. [Department of Physics, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów (Poland); Barnaś, Józef [Faculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań, Poland and Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań (Poland)

    2014-12-08

    Organic molecules have recently revolutionized ways to create new spintronic devices. Despite intense studies, the statistics of tunneling electrons through organic barriers remains unclear. Here, we investigate conductance and shot noise in magnetic tunnel junctions with 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA) barriers a few nm thick. For junctions in the electron tunneling regime, with magnetoresistance ratios between 10% and 40%, we observe superpoissonian shot noise. The Fano factor exceeds in 1.5–2 times the maximum values reported for magnetic tunnel junctions with inorganic barriers, indicating spin dependent bunching in tunneling. We explain our main findings in terms of a model which includes tunneling through a two level (or multilevel) system, originated from interfacial bonds of the PTCDA molecules. Our results suggest that interfaces play an important role in the control of shot noise when electrons tunnel through organic barriers.

  13. A subthermionic tunnel field-effect transistor with an atomically thin channel.

    Science.gov (United States)

    Sarkar, Deblina; Xie, Xuejun; Liu, Wei; Cao, Wei; Kang, Jiahao; Gong, Yongji; Kraemer, Stephan; Ajayan, Pulickel M; Banerjee, Kaustav

    2015-10-01

    The fast growth of information technology has been sustained by continuous scaling down of the silicon-based metal-oxide field-effect transistor. However, such technology faces two major challenges to further scaling. First, the device electrostatics (the ability of the transistor's gate electrode to control its channel potential) are degraded when the channel length is decreased, using conventional bulk materials such as silicon as the channel. Recently, two-dimensional semiconducting materials have emerged as promising candidates to replace silicon, as they can maintain excellent device electrostatics even at much reduced channel lengths. The second, more severe, challenge is that the supply voltage can no longer be scaled down by the same factor as the transistor dimensions because of the fundamental thermionic limitation of the steepness of turn-on characteristics, or subthreshold swing. To enable scaling to continue without a power penalty, a different transistor mechanism is required to obtain subthermionic subthreshold swing, such as band-to-band tunnelling. Here we demonstrate band-to-band tunnel field-effect transistors (tunnel-FETs), based on a two-dimensional semiconductor, that exhibit steep turn-on; subthreshold swing is a minimum of 3.9 millivolts per decade and an average of 31.1 millivolts per decade for four decades of drain current at room temperature. By using highly doped germanium as the source and atomically thin molybdenum disulfide as the channel, a vertical heterostructure is built with excellent electrostatics, a strain-free heterointerface, a low tunnelling barrier, and a large tunnelling area. Our atomically thin and layered semiconducting-channel tunnel-FET (ATLAS-TFET) is the only planar architecture tunnel-FET to achieve subthermionic subthreshold swing over four decades of drain current, as recommended in ref. 17, and is also the only tunnel-FET (in any architecture) to achieve this at a low power-supply voltage of 0.1 volts. Our

  14. Photostimulation of conductivity and electronic properties of field-emission nanocarbon coatings on silicon

    Science.gov (United States)

    Arkhipov, A. V.; Gabdullin, P. G.; Gordeev, S. K.; Zhurkin, A. M.; Kvashenkina, O. E.

    2017-01-01

    The electronic structure of island carbon films on silicon, which are capable of low-voltage field electron emission (at the mean electric-field strength above several hundreds of V/mm), have been investigated. It has been shown by tunnel spectroscopy that islands of these coatings are characterized by a continuous spectrum of the allowed delocalized states near the Fermi level, i.e., they contain carbon in the sp 2 state. The photoconductivity of the coatings under study has been observed. Based on the current and spectral characteristics of this phenomenon, it has been shown that islands are separated from each other by tunnel barriers and from the substrate by a Schottky barrier.

  15. A split accumulation gate architecture for silicon MOS quantum dots

    Science.gov (United States)

    Rochette, Sophie; Rudolph, Martin; Roy, Anne-Marie; Curry, Matthew; Ten Eyck, Gregory; Dominguez, Jason; Manginell, Ronald; Pluym, Tammy; King Gamble, John; Lilly, Michael; Bureau-Oxton, Chloé; Carroll, Malcolm S.; Pioro-Ladrière, Michel

    We investigate tunnel barrier modulation without barrier electrodes in a split accumulation gate architecture for silicon metal-oxide-semiconductor quantum dots (QD). The layout consists of two independent accumulation gates, one gate forming a reservoir and the other the QD. The devices are fabricated with a foundry-compatible, etched, poly-silicon gate stack. We demonstrate 4 orders of magnitude of tunnel-rate control between the QD and the reservoir by modulating the reservoir gate voltage. Last electron charging energies of app. 10 meV and tuning of the ST splitting in the range 100-200 ueV are observed in two different split gate layouts and labs. This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  16. Theory of superconducting tunneling without the tunneling Hamiltonian

    International Nuclear Information System (INIS)

    Arnold, G.B.

    1987-01-01

    When a tunneling barrier is nearly transparent, the standard tunneling (or transfer) Hamiltonian approximation fails. The author describes the theory which is necessary for calculating the tunneling current in these cases, and illustrate it by comparing theory and experiment on superconductor/insulator/superconductor (SIS) junctions have ultra-thin tunnel barriers. This theory accurately explains the subgap structure which appears in the dynamical resistance of such SIS junctions, including many observed details which no previous theory has reproduced. The expression for the current through an SIS junction with an ultrathin barrier is given by I(t) = Re{Sigma/sub n/ J/sub n/ (omega/sub o/)e/sup in omega/o/sup t/} where omega/sub o/ = 2eV/h is the Josephson frequency, V is the bias voltage, and the J/sub n/ are voltage dependent coefficients, one for each positive or negative integer, n, and n=0. The relative sign of the terms involving cos(n omega/sub o/t) and sin(n omega/sub o/t) agrees with experiment, in contrast to previous theories of Josephson tunneling

  17. Spin polarization at the interface and tunnel magnetoresistance

    International Nuclear Information System (INIS)

    Itoh, H.; Inoue, J.

    2001-01-01

    We propose that interfacial states of imperfectly oxidized Al ions may exist in ferromagnetic tunnel junctions with Al-O barrier and govern both the spin polarization and tunnel conductance. It is shown that the spin polarization is positive independent of materials and correlates well with the tunnel magnetoresistance

  18. Superconducting tunnel-junction refrigerator

    International Nuclear Information System (INIS)

    Melton, R.G.; Paterson, J.L.; Kaplan, S.B.

    1980-01-01

    The dc current through an S 1 -S 2 tunnel junction, with Δ 2 greater than Δ 1 , when biased with eV 1 +Δ 2 , will lower the energy in S 1 . This energy reduction will be shared by the phonons and electrons. This device is shown to be analogous to a thermoelectric refrigerator with an effective Peltier coefficient π* approx. Δ 1 /e. Tunneling calculations yield the cooling power P/sub c/, the electrical power P/sub e/ supplied by the bias supply, and the cooling efficiency eta=P/sub c//P/sub e/. The maximum cooling power is obtained for eV= +- (Δ 2 -Δ 1 ) and t 1 =T 1 /T/sub c/1 approx. 0.9. Estimates are made of the temperature difference T 2 -T 1 achievable in Al-Pb and Sn-Pb junctions with an Al 2 O 3 tunneling barrier. The performance of this device is shown to yield a maximum cooling efficiency eta approx. = Δ 1 /(Δ 2 -Δ 1 ) which can be compared with that available in an ideal Carnot refrigerator of eta=T 1 /(T 2 -T 1 ). The development of a useful tunnel-junction refrigerator requires a tunneling barrier with an effective thermal conductance per unit area several orders of magnitude less than that provided by the A1 2 O 3 barrier in the Al-Pb and Sn-Pb systems

  19. Quasi-bound states, resonance tunnelling, and tunnelling times ...

    Indian Academy of Sciences (India)

    scattering and decay of unstable nuclei via alpha decay, proton emission etc. as evident from refs [14–19]. A detailed procedure exists for the study of such states in ...... for the case of transmission across equispaced multiple barriers generating well-separated QB states. 3. The variation of total tunnelling time Tq shows ...

  20. Recognition tunneling

    International Nuclear Information System (INIS)

    Lindsay, Stuart; He Jin; Zhang Peiming; Chang Shuai; Huang Shuo; Sankey, Otto; Hapala, Prokop; Jelinek, Pavel

    2010-01-01

    Single molecules in a tunnel junction can now be interrogated reliably using chemically functionalized electrodes. Monitoring stochastic bonding fluctuations between a ligand bound to one electrode and its target bound to a second electrode ('tethered molecule-pair' configuration) gives insight into the nature of the intermolecular bonding at a single molecule-pair level, and defines the requirements for reproducible tunneling data. Simulations show that there is an instability in the tunnel gap at large currents, and this results in a multiplicity of contacts with a corresponding spread in the measured currents. At small currents (i.e. large gaps) the gap is stable, and functionalizing a pair of electrodes with recognition reagents (the 'free-analyte' configuration) can generate a distinct tunneling signal when an analyte molecule is trapped in the gap. This opens up a new interface between chemistry and electronics with immediate implications for rapid sequencing of single DNA molecules. (topical review)

  1. Recognition tunneling

    Energy Technology Data Exchange (ETDEWEB)

    Lindsay, Stuart; He Jin; Zhang Peiming; Chang Shuai; Huang Shuo [Biodesign Institute, Arizona State University, Tempe, AZ 85287 (United States); Sankey, Otto [Department of Physics, Arizona State University, Tempe, AZ 85287 (United States); Hapala, Prokop; Jelinek, Pavel [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 1862 53, Prague (Czech Republic)

    2010-07-02

    Single molecules in a tunnel junction can now be interrogated reliably using chemically functionalized electrodes. Monitoring stochastic bonding fluctuations between a ligand bound to one electrode and its target bound to a second electrode ('tethered molecule-pair' configuration) gives insight into the nature of the intermolecular bonding at a single molecule-pair level, and defines the requirements for reproducible tunneling data. Simulations show that there is an instability in the tunnel gap at large currents, and this results in a multiplicity of contacts with a corresponding spread in the measured currents. At small currents (i.e. large gaps) the gap is stable, and functionalizing a pair of electrodes with recognition reagents (the 'free-analyte' configuration) can generate a distinct tunneling signal when an analyte molecule is trapped in the gap. This opens up a new interface between chemistry and electronics with immediate implications for rapid sequencing of single DNA molecules. (topical review)

  2. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  3. Nanowire resonant tunneling diodes

    Science.gov (United States)

    Björk, M. T.; Ohlsson, B. J.; Thelander, C.; Persson, A. I.; Deppert, K.; Wallenberg, L. R.; Samuelson, L.

    2002-12-01

    Semiconductor heterostructures and their implementation into electronic and photonic devices have had tremendous impact on science and technology. In the development of quantum nanoelectronics, one-dimensional (1D) heterostructure devices are receiving a lot of interest. We report here functional 1D resonant tunneling diodes obtained via bottom-up assembly of designed segments of different semiconductor materials in III/V nanowires. The emitter, collector, and the central quantum dot are made from InAs and the barrier material from InP. Ideal resonant tunneling behavior, with peak-to-valley ratios of up to 50:1 and current densities of 1 nA/μm2 was observed at low temperatures.

  4. Tunneling spin injection into single layer graphene.

    Science.gov (United States)

    Han, Wei; Pi, K; McCreary, K M; Li, Yan; Wong, Jared J I; Swartz, A G; Kawakami, R K

    2010-10-15

    We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO₂ seeded MgO barriers. A nonlocal magnetoresistance (ΔR(NL)) of 130  Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔR(NL) vs SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

  5. Resonant tunneling of electrons in quantum wires

    International Nuclear Information System (INIS)

    Krive, I.V.; Shekhter, R.I.; Jonson, M.; Krive, I.V.

    2010-01-01

    We considered resonant electron tunneling in various nanostructures including single wall carbon nanotubes, molecular transistors and quantum wires formed in two-dimensional electron gas. The review starts with a textbook description of resonant tunneling of noninteracting electrons through a double-barrier structure. The effects of electron-electron interaction in sequential and resonant electron tunneling are studied by using Luttinger liquid model of electron transport in quantum wires. The experimental aspects of the problem (fabrication of quantum wires and transport measurements) are also considered. The influence of vibrational and electromechanical effects on resonant electron tunneling in molecular transistors is discussed.

  6. Trajectories and traversal times in quantum tunneling

    International Nuclear Information System (INIS)

    Huang, Zhi Hong.

    1989-01-01

    The classical concepts of trajectories and traversal times applied to quantum tunneling are discussed. By using the Wentzel-Kramers-Brillouin approximation, it is found that in a forbidden region of a multidimensional space the wave function can be described by two sets of trajectories, or equivalently by two sets of wave fronts. The trajectories belonging to different sets are mutually orthogonal. An extended Huygens construction is proposed to determine these wave fronts and trajectories. In contrast to the classical results in the allowed region, these trajectories couple to each other. However, if the incident wave is normal to the turning surface, the trajectories are found to be independent and can be determined by Newton's equations of motion with inverted potential and energy. The multidimensional tunneling theory is then applied to the scanning tunneling microscope to calculate the current density distribution and to derive the expressions for the lateral resolution and the surface corrugation amplitude. The traversal time in quantum tunneling, i.e. tunneling time, is found to depend on model calculations and simulations. Computer simulation of a wave packet tunneling through a square barrier is performed. Several approaches, including the phase method, Larmor clock, and time-dependent barrier model, are investigated. For a square barrier, two characteristic times are found: One is equal to the barrier width divided by the magnitude of the imaginary velocity; the other is equal to the decay length divided by the incident velocity. It is believed that the tunneling time can only be defined operationally

  7. Tunneling Anomalous and Spin Hall Effects.

    Science.gov (United States)

    Matos-Abiague, A; Fabian, J

    2015-07-31

    We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems.

  8. A15 Nb-Sn tunnel junction fabrication and properties

    International Nuclear Information System (INIS)

    Rudman, D.A.; Hellman, F.; Hammond, R.H.; Beasley, M.R.

    1984-01-01

    We have investigated the deposition conditions necessary to produce optimized films of A15 Nb-Sn (19--26 at. % Sn) by electron-beam codeposition. Reliable high-quality superconducting tunnel junctions can be made on this material by using an oxidized-amorphous silicon overlayer as the tunneling barrier and lead as the counter-electrode. These junctions have been used both as a tool for materials diagnosis and as a probe of the superconducting properties (critical temperature and gap) of the films. Careful control of the substrate temperature during the growth of the films has proved critical to obtain homogeneous samples. When the substrate temperature is properly stabilized, stoichiometric Nb 3 Sn is found to be relatively insensitive to the deposition temperature and conditions. In contrast, the properties of the off-stoichiometry (Sn-poor) material depend strongly on the deposition temperature. For this Sn-poor material the ratio 2Δ/kT/sub c/ at a given composition increases with increasing deposition temperature. This change appears to be due to an increase in the gap at the surface of the material (as measured by tunneling) relative to the critical temperature of the bulk. All the tunnel junctions exhibit some persistent nonidealities in their current-voltage characteristics that are qualitatively insensitive to composition or deposition conditions. In particular, the junctions show excess conduction below the sum of the energy gaps (with onset at the counter-electrode gap) and a broadened current rise at the sum gap. The detailed origins of these problems are not yet understood

  9. Ultrafast terahertz scanning tunneling microscopy with atomic resolution

    DEFF Research Database (Denmark)

    Jelic, Vedran; Iwaszczuk, Krzysztof; Nguyen, Peter H.

    2016-01-01

    We demonstrate that ultrafast terahertz scanning tunneling microscopy (THz-STM) can probe single atoms on a silicon surface with simultaneous sub-nanometer and sub-picosecond spatio-temporal resolution. THz-STM is established as a new technique for exploring high-field non-equilibrium tunneling...

  10. Chaos regularization of quantum tunneling rates

    International Nuclear Information System (INIS)

    Pecora, Louis M.; Wu Dongho; Lee, Hoshik; Antonsen, Thomas; Lee, Ming-Jer; Ott, Edward

    2011-01-01

    Quantum tunneling rates through a barrier separating two-dimensional, symmetric, double-well potentials are shown to depend on the classical dynamics of the billiard trajectories in each well and, hence, on the shape of the wells. For shapes that lead to regular (integrable) classical dynamics the tunneling rates fluctuate greatly with eigenenergies of the states sometimes by over two orders of magnitude. Contrarily, shapes that lead to completely chaotic trajectories lead to tunneling rates whose fluctuations are greatly reduced, a phenomenon we call regularization of tunneling rates. We show that a random-plane-wave theory of tunneling accounts for the mean tunneling rates and the small fluctuation variances for the chaotic systems.

  11. Growth of silicon on tungsten diselenide

    NARCIS (Netherlands)

    Yao, Qirong; van Bremen, Rik; Zandvliet, Henricus J.W.

    2016-01-01

    Here, we report a scanning tunneling microscopy and spectroscopy study of the growth of silicon on a tungsten diselenide (WSe2) substrate. We have found convincing experimental evidence that silicon does not remain on the WSe2 substrate but rather intercalates between the top layers of WSe2. Upon

  12. Fabrication and characterization of semiconducting nanowires for tunnel field transistors

    Science.gov (United States)

    Vallett, Aaron Lee

    The scaling of traditional metal-oxide-semiconductor field-effect transistors (MOSFETs) is hitting a limit, not due to difficulties in fabricating short gate lengths, but rather to an ongoing power crisis. As channel lengths have been reduced power densities of integrated circuits have risen dramatically. While supply voltage scaling would alleviate many power concerns, the MOSFET structure fundamentally limits the amount that voltages can be reduced. Because MOSFET operation is governed by thermal emission of carriers over a potential barrier, the subthreshold swing from the off to on current is limited to a minimum of 60 mV/decade of current. Therefore, reductions in the supply voltage will degrade the on/off current ratio. The tunnel field-effect transistor (TFET) has emerged as a potential solution to these problems. Current is controlled by band-to-band tunneling through a barrier that is modulated by the gate, and subthreshold swings below 60 mV/dec. can be achieved. While TFET simulations are quite promising, subthreshold swings below 60 mV/dec. at technically relevant on-currents have yet to be demonstrated experimentally. Nanowire geometries and III-V semiconductor channel materials are predicted to improve TFET performance by increasing gate control and tunneling current. In this dissertation the fabrication of TFETs from semiconducting nanowires will be investigated. First, axially doped silicon (Si) nanowire in situ p-n junctions will be studied. By controlling the nanowire growth, separate p and n-type segments can be formed to create a rectifying junction. While as-grown nanowire junctions do not have the abruptness necessary to facilitate band-to-band tunneling, thermally oxidized nanowires are shown to have a p-n-n+ profile with an abrupt n-n+ junction. By gating the nanowires an abrupt electrostatically-doped p +- n+ junction can be formed that permits reverse-biased tunneling. These p-n-n+ nanowires will be integrated into a top-gated lateral TFET

  13. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  14. Heusler compounds with perpendicular magnetic anisotropy and large tunneling magnetoresistance

    Science.gov (United States)

    Faleev, Sergey V.; Ferrante, Yari; Jeong, Jaewoo; Samant, Mahesh G.; Jones, Barbara; Parkin, Stuart S. P.

    2017-07-01

    In the present work we suggest a recipe for finding tetragonal Heusler compounds with perpendicular magnetic anisotropy (PMA) that also exhibit large tunneling magnetoresistance (TMR) when used as electrodes in magnetic tunnel junction devices with suitable tunneling barrier materials. We performed density-functional theory calculations for 286 Heusler compounds and identified 116 stable tetragonal compounds. Ten of these compounds are predicted to have strong PMA and, simultaneously, exponentially increasing TMR with increasing tunneling barrier thickness due to the so-called Brillouin zone spin filtering effect. Experimental measurements performed for 25 Heusler compounds theoretically identified as tetragonal show that ten of these compounds indeed have tetragonal structure with PMA.

  15. Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles

    Science.gov (United States)

    Useinov, Arthur; Ye, Lin-Xiu; Useinov, Niazbeck; Wu, Te-Ho; Lai, Chih-Huang

    2015-01-01

    The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and non-magnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magnetic NPs and determined that its value can be much larger than in single barrier system (SBS) for the same tunneling thickness. The reported simulation reproduces experimental data of the TMR suppression and peak-like TMR anomalies at low voltages available in leterature. PMID:26681336

  16. Influence of the applied power on the barrier performance of silicon-containing plasma polymer coatings using a hollow cathode-activated PECVD process

    NARCIS (Netherlands)

    Top, Michiel; Fahlteich, John; De Hosson, Jeff T. M.

    A hollow cathode arc discharge is used for the roll-to-roll deposition of silicon-containing plasma polymer thin films on a polymer substrate. It is found that the fragmentation of the used monomer hexamethyldisiloxane (HMDSO) increases with increasing plasma power. The higher fragmentation was

  17. Tunneling time in space fractional quantum mechanics

    Science.gov (United States)

    Hasan, Mohammad; Mandal, Bhabani Prasad

    2018-02-01

    We calculate the time taken by a wave packet to travel through a classically forbidden region of space in space fractional quantum mechanics. We obtain the close form expression of tunneling time from a rectangular barrier by stationary phase method. We show that tunneling time depends upon the width b of the barrier for b → ∞ and therefore Hartman effect doesn't exist in space fractional quantum mechanics. Interestingly we found that the tunneling time monotonically reduces with increasing b. The tunneling time is smaller in space fractional quantum mechanics as compared to the case of standard quantum mechanics. We recover the Hartman effect of standard quantum mechanics as a special case of space fractional quantum mechanics.

  18. Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures

    Science.gov (United States)

    Samanta, Piyas

    2017-09-01

    We present a detailed investigation on temperature-dependent current conduction through thin tunnel oxides grown on degenerately doped n-type silicon (n+-Si) under positive bias ( VG ) on heavily doped n-type polycrystalline silicon (n+-polySi) gate in metal-oxide-semiconductor devices. The leakage current measured between 298 and 573 K and at oxide fields ranging from 6 to 10 MV/cm is primarily attributed to Poole-Frenkel (PF) emission of trapped electrons from the neutral electron traps located in the silicon dioxide (SiO2) band gap in addition to Fowler-Nordheim (FN) tunneling of electrons from n+-Si acting as the drain node in FLOating gate Tunnel OXide Electrically Erasable Programmable Read-Only Memory devices. Process-induced neutral electron traps are located at 0.18 eV and 0.9 eV below the SiO2 conduction band. Throughout the temperature range studied here, PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm. A physics based new analytical formula has been developed for FN tunneling of electrons from the accumulation layer of degenerate semiconductors at a wide range of temperatures incorporating the image force barrier rounding effect. FN tunneling has been formulated in the framework of Wentzel-Kramers-Brilloiun taking into account the correction factor due to abrupt variation of the energy barrier at the cathode/oxide interface. The effect of interfacial and near-interfacial trapped-oxide charges on FN tunneling has also been investigated in detail at positive VG . The mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown of the memory devices and to precisely predict the normal operating field or applied floating gate (FG) voltage for lifetime projection of the devices. In addition, we present theoretical results showing the effect of drain doping concentration on the FG leakage current.

  19. Longitudinal soliton tunneling in optical fiber.

    Science.gov (United States)

    Marest, T; Braud, F; Conforti, M; Wabnitz, S; Mussot, A; Kudlinski, A

    2017-06-15

    We report the observation of the longitudinal soliton tunneling effect in axially varying optical fibers. A fundamental soliton, initially propagating in the anomalous dispersion region of a fiber, can pass through a normal dispersion barrier without being substantially affected. We perform experimental studies by means of spectral and temporal characterizations that show the evidence of the longitudinal soliton tunneling process. Our results are well supported by numerical simulations using the generalized nonlinear Schrödinger equation.

  20. InAs/Si Hetero-Junction Nanotube Tunnel Transistors

    OpenAIRE

    Hanna, Amir N.; Fahad, Hossain M.; Hussain, Muhammad M.

    2015-01-01

    Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ?ON? state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunnel...

  1. Tunneling time, exit time and exit momentum in strong field tunnel ionization

    International Nuclear Information System (INIS)

    Teeny, Nicolas

    2016-01-01

    Tunnel ionization belongs to the fundamental processes of atomic physics. It is still an open question when does the electron tunnel ionize and how long is the duration of tunneling. In this work we solve the time-dependent Schroedinger equation in one and two dimensions and use ab initio quantum calculations in order to answer these questions. Additionally, we determine the exit momentum of the tunnel ionized electron from first principles. We find out results that are different from the assumptions of the commonly employed two-step model, which assumes that the electron ionizes at the instant of electric field maximum with a zero momentum. After determining the quantum final momentum distribution of tunnel ionized electrons we show that the two-step model fails to predict the correct final momentum. Accordingly we suggest how to correct the two-step model. Furthermore, we determine the instant at which tunnel ionization starts, which turns out to be different from the instant usually assumed. From determining the instant at which it is most probable for the electron to enter the tunneling barrier and the instant at which it exits we determine the most probable time spent under the barrier. Moreover, we apply a quantum clock approach in order to determine the duration of tunnel ionization. From the quantum clock we determine an average tunneling time which is different in magnitude and origin with respect to the most probable tunneling time. By defining a probability distribution of tunneling times using virtual detectors we relate both methods and explain the apparent discrepancy. The results found have in general an effect on the interpretation of experiments that measure the spectra of tunnel ionized electrons, and specifically on the calibration of the so called attoclock experiments, because models with imprecise assumptions are usually employed in order to interpret experimental results.

  2. Tunneling time, exit time and exit momentum in strong field tunnel ionization

    Energy Technology Data Exchange (ETDEWEB)

    Teeny, Nicolas

    2016-10-18

    Tunnel ionization belongs to the fundamental processes of atomic physics. It is still an open question when does the electron tunnel ionize and how long is the duration of tunneling. In this work we solve the time-dependent Schroedinger equation in one and two dimensions and use ab initio quantum calculations in order to answer these questions. Additionally, we determine the exit momentum of the tunnel ionized electron from first principles. We find out results that are different from the assumptions of the commonly employed two-step model, which assumes that the electron ionizes at the instant of electric field maximum with a zero momentum. After determining the quantum final momentum distribution of tunnel ionized electrons we show that the two-step model fails to predict the correct final momentum. Accordingly we suggest how to correct the two-step model. Furthermore, we determine the instant at which tunnel ionization starts, which turns out to be different from the instant usually assumed. From determining the instant at which it is most probable for the electron to enter the tunneling barrier and the instant at which it exits we determine the most probable time spent under the barrier. Moreover, we apply a quantum clock approach in order to determine the duration of tunnel ionization. From the quantum clock we determine an average tunneling time which is different in magnitude and origin with respect to the most probable tunneling time. By defining a probability distribution of tunneling times using virtual detectors we relate both methods and explain the apparent discrepancy. The results found have in general an effect on the interpretation of experiments that measure the spectra of tunnel ionized electrons, and specifically on the calibration of the so called attoclock experiments, because models with imprecise assumptions are usually employed in order to interpret experimental results.

  3. An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices

    Science.gov (United States)

    De Michielis, L.; Daǧtekin, N.; Biswas, A.; Lattanzio, L.; Selmi, L.; Luisier, M.; Riel, H.; Ionescu, A. M.

    2013-09-01

    In this paper, an analytical band-to-band tunneling model is proposed, validated by means of drift-diffusion simulation and comparison with experimental data, implemented in Verilog-A, and finally proven with SPICE simulator through simulation of circuits featuring tunneling diodes. The p-n junction current calculation starts from a non-local Band-to-Band tunneling theory including the electron-phonon interaction and therefore it is particularly suited for indirect semiconductor materials such as silicon- or germanium-based interband tunneling devices.

  4. Dependences of the Tunnel Magnetoresistance and Spin Transfer Torque on the Sizes and Concentration of Nanoparticles in Magnetic Tunnel Junctions

    Science.gov (United States)

    Esmaeili, A. M.; Useinov, A. N.; Useinov, N. Kh.

    2018-01-01

    Dependences of the tunnel magnetoresistance and in-plane component of the spin transfer torque on the applied voltage in a magnetic tunnel junction have been calculated in the approximation of ballistic transport of conduction electrons through an insulating layer with embedded magnetic or nonmagnetic nanoparticles. A single-barrier magnetic tunnel junction with a nanoparticle embedded in an insulator forms a double-barrier magnetic tunnel junction. It has been shown that the in-plane component of the spin transfer torque in the double-barrier magnetic tunnel junction can be higher than that in the single-barrier one at the same thickness of the insulating layer. The calculations show that nanoparticles embedded in the tunnel junction increase the probability of tunneling of electrons, create resonance conditions, and ensure the quantization of the conductance in contrast to the tunnel junction without nanoparticles. The calculated dependences of the tunnel magnetoresistance correspond to experimental data demonstrating peak anomalies and suppression of the maximum magnetoresistances at low voltages.

  5. Carpal Tunnel Syndrome

    Science.gov (United States)

    ... a passing cramp? It could be carpal tunnel syndrome. The carpal tunnel is a narrow passageway of ... three times more likely to have carpal tunnel syndrome than men. Early diagnosis and treatment are important ...

  6. Poly-silicon quantum-dot single-electron transistors

    International Nuclear Information System (INIS)

    Kang, Kwon-Chil; Lee, Joung-Eob; Lee, Jung-Han; Lee, Jong-Ho; Shin, Hyung-Cheol; Park, Byung-Gook

    2012-01-01

    For operation of a single-electron transistors (SETs) at room temperature, we proposed a fabrication method for a SET with a self-aligned quantum dot by using polycrystalline silicon (poly-Si). The self-aligned quantum dot is formed by the selective etching of a silicon nanowire on a planarized surface and the subsequent deposition and etch-back of poly-silicon or chemical mechanical polishing (CMP). The two tunneling barriers of the SET are fabricated by thermal oxidation. Also, to decrease the leakage current and control the gate capacitance, we deposit a hard oxide mask layer. The control gate is formed by using an electron beam and photolithography on chemical vapor deposition (CVD). Owing to the small capacitance of the narrow control gate due to the tetraethyl orthosilicate (TEOS) hard mask, we observe clear Coulomb oscillation peaks and differential trans-conductance curves at room temperature. The clear oscillation period of the fabricated SET is 2.0 V.

  7. A Resonant Tunneling Nanowire Field Effect Transistor with Physical Contractions: A Negative Differential Resistance Device for Low Power Very Large Scale Integration Applications

    Science.gov (United States)

    Molaei Imen Abadi, Rouzbeh; Saremi, Mehdi

    2018-02-01

    In this paper, the influence of ultra-scaled physical symmetrical contraction on electrical characteristics of ultra-thin silicon-on-insulator nanowires with circular gate-all-around structure is investigated by using a 3D Atlas numerical quantum simulator based on non-equilibrium green's function formalism. It is demonstrated that local cross-section variation in a nanowire transistor results in the establishment of tunnel energy barriers at the source-channel and drain-channel junctions which change device physics and cause a transmission from a quantum wire (1-D) to a floating quantum dot nanowire (0-D) introducing a resonant tunneling nanowire FET (RT-NWFET) as an interesting concept of nanoscale MOSFETs. The barriers construct resonance energy levels in the channel region of nanowires because of the longitudinal confinement in three directions causing some fluctuation in I D- V GS characteristic. In addition, these barriers remarkably improve the subthreshold swing and minimize the ON/OFF-current ratio degradation at a low operation voltage of 0.5 V. As a result, RT-NWFETs are intrinsically preserved from drain-source tunneling and are an interesting candidate for developing the roadmap below 10 nm.

  8. A review on all-perovskite multiferroic tunnel junctions

    Directory of Open Access Journals (Sweden)

    Yuewei Yin

    2017-12-01

    Full Text Available Although the basic concept was proposed only about 10 years ago, multiferroic tunnel junctions (MFTJs with a ferroelectric barrier sandwiched between two ferromagnetic electrodes have already drawn considerable interests, driven mainly by its potential applications in multi-level memories and electric field controlled spintronics. The purpose of this article is to review the recent progress of all-perovskite MFTJs. Starting from the key functional properties of the tunneling magnetoresistance, tunneling electroresistance, and tunneling electromagnetoresistance effects, we discuss the main origins of the tunneling electroresistance effect, recent progress in achieving multilevel resistance states in a single device, and the electrical control of spin polarization and transport through the ferroelectric polarization reversal of the tunneling barrier.

  9. Insights into operation of planar tri-gate tunnel field effect transistor for dynamic memory application

    Science.gov (United States)

    Navlakha, Nupur; Kranti, Abhinav

    2017-07-01

    Insights into device physics and operation through the control of energy barriers are presented for a planar tri-gate Tunnel Field Effect Transistor (TFET) based dynamic memory. The architecture consists of a double gate (G1) at the source side and a single gate (G2) at the drain end of the silicon film. Dual gates (G1) effectively enhance the tunneling based read mechanism through the enhanced coupling and improved electrostatic control over the channel. The single gate (G2) controls the holes in the potential barrier induced through the proper selection of bias and workfunction. The results indicate that the planar tri-gate achieves optimum performance evaluated in terms of two composite metrics (M1 and M2), namely, product of (i) Sense Margin (SM) and Retention Time (RT) i.e., M1 = SM × RT and (ii) Sense Margin and Current Ratio (CR) i.e., M2 = SM × CR. The regulation of barriers created by the gates (G1 and G2) through the optimal use of device parameters leads to better performance metrics, with significant improvement at scaled lengths as compared to other tunneling based dynamic memory architectures. The investigation shows that lengths of G1, G2 and lateral spacing can be scaled down to 25 nm, 50 nm, and 30 nm, respectively, while achieving reasonable values for (M1, M2). The work demonstrates a systematic approach to showcase the advancement in TFET based Dynamic Random Access Memory (DRAM) through the use of planar tri-gate topology at a lower bias value. The concept, design, and operation of planar tri-gate architecture provide valuable viewpoints for TFET based DRAM.

  10. Comparative study of CNT, silicon nanowire and fullerene embedded multilayer high-k gate dielectric MOS memory devices

    Energy Technology Data Exchange (ETDEWEB)

    Sengupta, Amretashis; Sarkar, Chandan Kumar [Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata-700 032 (India); Requejo, Felix G, E-mail: amretashis@gmail.com [INIFTA, Departmento de Quimica and Departmento de Fisica, Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC/67-1900, La Plata (Argentina)

    2011-10-12

    Here, we present a comparative theoretical study on stacked (multilayer) gate dielectric MOS memory devices, having a metallic/semiconducting carbon nanotube (CNT), silicon nanowire (Si NW) and fullerene (C60) embedded nitride layer acting as a floating gate. Two types of devices, one with HfO{sub 2}-SiO{sub 2} stack (stack-1) and the other with La{sub 2}O{sub 3}-SiO{sub 2} stack (stack-2) as the tunnel oxide were compared. We evaluated the effective barrier height, the dielectric constant and the effective electron mobility in the composite gate dielectric with the Maxwell-Garnett effective medium theory. Thereafter applying the WKB approximation, we simulated the Fowler-Nordheim (F-N) tunnelling/writing current and the direct tunnelling/leakage current in these devices. We evaluated the I-V characteristics, the charge decay and also the impact of CNT/Si NW aspect ratio and the volume fraction on the effective barrier height and the write voltage, respectively. We also simulated the write time, retention time and the erase time of these MOS devices. Based on the simulation results, it was concluded that the metallic CNT embedded stack-1 device offered the best performance in terms of higher F-N tunnelling current, lower direct tunnelling current and lesser write voltage and write time compared with the other devices. In case of direct tunnelling leakage and retention time it was found that the met CNT embedded stack-2 device showed better characteristics. For erasing, however, the C60 embedded stack-1 device showed the smallest erase time. When compared with earlier reports, it was seen that CNT, C60 and Si NW embedded devices all performed better than nanocrystalline Si embedded MOS non-volatile memories.

  11. Comparative study of CNT, silicon nanowire and fullerene embedded multilayer high-k gate dielectric MOS memory devices

    Science.gov (United States)

    Sengupta, Amretashis; Sarkar, Chandan Kumar; Requejo, Felix G.

    2011-10-01

    Here, we present a comparative theoretical study on stacked (multilayer) gate dielectric MOS memory devices, having a metallic/semiconducting carbon nanotube (CNT), silicon nanowire (Si NW) and fullerene (C60) embedded nitride layer acting as a floating gate. Two types of devices, one with HfO2-SiO2 stack (stack-1) and the other with La2O3-SiO2 stack (stack-2) as the tunnel oxide were compared. We evaluated the effective barrier height, the dielectric constant and the effective electron mobility in the composite gate dielectric with the Maxwell-Garnett effective medium theory. Thereafter applying the WKB approximation, we simulated the Fowler-Nordheim (F-N) tunnelling/writing current and the direct tunnelling/leakage current in these devices. We evaluated the I-V characteristics, the charge decay and also the impact of CNT/Si NW aspect ratio and the volume fraction on the effective barrier height and the write voltage, respectively. We also simulated the write time, retention time and the erase time of these MOS devices. Based on the simulation results, it was concluded that the metallic CNT embedded stack-1 device offered the best performance in terms of higher F-N tunnelling current, lower direct tunnelling current and lesser write voltage and write time compared with the other devices. In case of direct tunnelling leakage and retention time it was found that the met CNT embedded stack-2 device showed better characteristics. For erasing, however, the C60 embedded stack-1 device showed the smallest erase time. When compared with earlier reports, it was seen that CNT, C60 and Si NW embedded devices all performed better than nanocrystalline Si embedded MOS non-volatile memories.

  12. Band-to-Band Tunnel Transistor Design and Modeling for Low Power Applications

    Science.gov (United States)

    2012-05-10

    MEDICI . We start off with the form of Kane’s tunneling model [2.5] where only one effective mass of the carrier is considered. It is expanded to...calculated for silicon and germanium then put into MEDICI for more exact silicon and germanium tunneling simulations. The dependence of the tunneling rate...simulator MEDICI has the form of Kane’s tunneling model. [2.11] = . × . / × − . × / (2.11) The parameters A.BTBT, B.BTBT

  13. Bottom-up and top-down fabrication of nanowire-based electronic devices: In situ doping of vapor liquid solid grown silicon nanowires and etch-dependent leakage current in InGaAs tunnel junctions

    Science.gov (United States)

    Kuo, Meng-Wei

    Semiconductor nanowires are important components in future nanoelectronic and optoelectronic device applications. These nanowires can be fabricated using either bottom-up or top-down methods. While bottom-up techniques can achieve higher aspect ratio at reduced dimension without having surface and sub-surface damage, uniform doping distributions with abrupt junction profiles are less challenging for top-down methods. In this dissertation, nanowires fabricated by both methods were systematically investigated to understand: (1) the in situ incorporation of boron (B) dopants in Si nanowires grown by the bottom-up vapor-liquid-solid (VLS) technique, and (2) the impact of plasma-induced etch damage on InGaAs p +-i-n+ nanowire junctions for tunnel field-effect transistors (TFETs) applications. In Chapter 2 and 3, the in situ incorporation of B in Si nanowires grown using silane (SiH4) or silicon tetrachloride (SiCl4) as the Si precursor and trimethylboron (TMB) as the p-type dopant source is investigated by I-V measurements of individual nanowires. The results from measurements using a global-back-gated test structure reveal nonuniform B doping profiles on nanowires grown from SiH4, which is due to simultaneous incorporation of B from nanowire surface and the catalyst during VLS growth. In contrast, a uniform B doping profile in both the axial and radial directions is achieved for TMBdoped Si nanowires grown using SiCl4 at high substrate temperatures. In Chapter 4, the I-V characteristics of wet- and dry-etched InGaAs p+-i-n+ junctions with different mesa geometries, orientations, and perimeter-to-area ratios are compared to evaluate the impact of the dry etch process on the junction leakage current properties. Different post-dry etch treatments, including wet etching and thermal annealing, are performed and the effectiveness of each is assessed by temperaturedependent I-V measurements. As compared to wet-etched control devices, dry-etched junctions have a significantly

  14. Evolution of tunnelling causality and the 'Hartman-Fletcher effect'

    International Nuclear Information System (INIS)

    Olkhovsky, V.S.; Zaichenko, A.K.

    1995-01-01

    A new concept of the macroscopic tunneling time is added to our previous definition of the microscopic tunnelling time. The formally accusal jump of a time advance near the forward barrier wall is interpreted as a result of the superposition and interference of incoming and reflected waves. The reality 'H.-F. effect' is confirmed

  15. Tunneling time and Hartman effect in a ferromagnetic graphene superlattice

    Directory of Open Access Journals (Sweden)

    Farhad Sattari

    2012-03-01

    Full Text Available Using transfer-matrix and stationary phase methods, we study the tunneling time (group delay time in a ferromagnetic monolayer graphene superlattice. The system we peruse consists of a sequence of rectangular barriers and wells, which can be realized by putting a series of electronic gates on the top of ferromagnetic graphene. The magnetization in the two ferromagnetic layers is aligned parallel. We find out that the tunneling time for normal incident is independent of spin state of electron as well as the barrier height and electron Fermi energy while for the oblique incident angles the tunneling time depends on the spin state of electron and has an oscillatory behavior. Also the effect of barrier width on tunneling time is also investigated and shown that, for normal incident, the Hartman effect disappears in a ferromagnetic graphene superlattice but it appears for oblique incident angles when the x component of the electron wave vector in the barrier is imaginary.

  16. Tunneling of heat: Beyond linear response regime

    Science.gov (United States)

    Walczak, Kamil; Saroka, David

    2018-02-01

    We examine nanoscale processes of heat (energy) transfer as carried by electrons tunneling via potential barriers and molecular interconnects between two heat reservoirs (thermal baths). For that purpose, we use Landauer-type formulas to calculate thermal conductance and quadratic correction to heat flux flowing via quantum systems. As an input, we implement analytical expressions for transmission functions related to simple potential barriers and atomic bridges. Our results are discussed with respect to energy of tunneling electrons, temperature, the presence of resonant states, and specific parameters characterizing potential barriers as well as heat carriers. The simplicity of semi-analytical models developed by us allows to fit experimental data and extract crucial information about the values of model parameters. Further investigations are expected for more realistic transmission functions, while time-dependent aspects of nanoscale heat transfer may be addressed by using the concept of wave packets scattered on potential barriers and point-like defects within regular (periodic) nanostructures.

  17. Spin-dependent tunnelling in magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Tsymbal, Evgeny Y; Mryasov, Oleg N; LeClair, Patrick R

    2003-01-01

    The phenomenon of electron tunnelling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its own. Spin-dependent tunnelling (SDT) in magnetic tunnel junctions (MTJs) has recently aroused enormous interest and has developed in a vigorous field of research. The large tunnelling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible applications in non-volatile random-access memories and next-generation magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of SDT. In this review article we present an overview of this field of research. We discuss various factors that control the spin polarization and magnetoresistance in MTJs. Starting from early experiments on SDT and their interpretation, we consider thereafter recent experiments and models which highlight the role of the electronic structure of the ferromagnets, the insulating layer, and the ferromagnet/insulator interfaces. We also discuss the role of disorder in the barrier and in the ferromagnetic electrodes and their influence on TMR. (topical review)

  18. Process for Polycrystalline film silicon growth

    Science.gov (United States)

    Wang, Tihu; Ciszek, Theodore F.

    2001-01-01

    A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.

  19. Resonant tunneling of spin-wave packets via quantized states in potential wells.

    Science.gov (United States)

    Hansen, Ulf-Hendrik; Gatzen, Marius; Demidov, Vladislav E; Demokritov, Sergej O

    2007-09-21

    We have studied the tunneling of spin-wave pulses through a system of two closely situated potential barriers. The barriers represent two areas of inhomogeneity of the static magnetic field, where the existence of spin waves is forbidden. We show that for certain values of the spin-wave frequency corresponding to the quantized spin-wave states existing in the well formed between the barriers, the tunneling has a resonant character. As a result, transmission of spin-wave packets through the double-barrier structure is much more efficient than the sequent tunneling through two single barriers.

  20. Universal tunneling behavior in technologically relevant P/N junction diodes

    International Nuclear Information System (INIS)

    Solomon, Paul M.; Jopling, Jason; Frank, David J.; D'Emic, Chris; Dokumaci, O.; Ronsheim, P.; Haensch, W.E.

    2004-01-01

    Band-to-band tunneling was studied in ion-implanted P/N junction diodes with profiles representative of present and future silicon complementary metal-oxide-silicon (CMOS) field effect transistors. Measurements were done over a wide range of temperatures and implant parameters. Profile parameters were derived from analysis of capacitance versus voltage characteristics, and compared to secondary-ion mass spectroscopy analysis. When the tunneling current was plotted against the effective tunneling distance (tunneling distance corrected for band curvature) a quasi-universal exponential reduction of tunneling current versus, tunneling distance was found with an attenuation length of 0.38 nm, corresponding to a tunneling effective mass of 0.29 times the free electron mass (m 0 ), and an extrapolated tunneling current at zero tunnel distance of 5.3x10 7 A/cm 2 at 300 K. These results are directly applicable for predicting drain to substrate currents in CMOS transistors on bulk silicon, and body currents in CMOS transistors in silicon-on-insulator

  1. Tunnel magnetoresistance in double spin filter junctions

    International Nuclear Information System (INIS)

    Saffarzadeh, Alireza

    2003-01-01

    We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron approximation, the dependence of the tunnel magnetoresistance (TMR) on the thickness of the central NM layer, bias voltage and temperature in the double SF junction are studied theoretically. It is shown that the TMR and electron-spin polarization in this structure can reach very large values under suitable conditions. The highest value of the TMR can reach 99%. By an appropriate choice of the thickness of the central NM layer, the degree of spin polarization in this structure will be higher than that of the single SF junctions. These results may be useful in designing future spin-polarized tunnelling devices

  2. Diamond deposition on siliconized stainless steel

    International Nuclear Information System (INIS)

    Alvarez, F.; Reinoso, M.; Huck, H.; Rosenbusch, M.

    2010-01-01

    Silicon diffusion layers in AISI 304 and AISI 316 type stainless steels were investigated as an alternative to surface barrier coatings for diamond film growth. Uniform 2 μm thick silicon rich interlayers were obtained by coating the surface of the steels with silicon and performing diffusion treatments at 800 deg. C. Adherent diamond films with low sp 2 carbon content were deposited on the diffused silicon layers by a modified hot filament assisted chemical vapor deposition (HFCVD) method. Characterization of as-siliconized layers and diamond coatings was performed by energy dispersive X-ray analysis, scanning electron microscopy, X-ray diffraction and Raman spectroscopy.

  3. Tunneling of a coupled system

    International Nuclear Information System (INIS)

    Avishai, Y.

    1985-01-01

    We consider tunneling through a potential barrier V(x) in the presence of a coupling term W(x,y). Let H(y) be the internal Hamiltonian associated with the coordinate y and let E 0 (x) be the ground state energy of the operator H(x;y) = H(y) + W(x,y) in which x is a parameter. Our result for the tunneling probability (in the WKB approximation) is P = exp(2i ∫ k 0 (x)dx) where, at energy E, k 0 (x) = [E-E 0 (x)-V(x)]sup(1/2)/(h/2π) is the local wave number in the presence of coupling. (orig.)

  4. Spin transport in spin filtering magnetic tunneling junctions.

    Science.gov (United States)

    Li, Yun; Lee, Eok Kyun

    2007-11-01

    Taking into account spin-orbit coupling and s-d interaction, we investigate spin transport properties of the magnetic tunneling junctions with spin filtering barrier using Landauer-Büttiker formalism implemented with the recursive algorithm to calculate the real-space Green function. We predict completely different bias dependence of negative tunnel magnetoresistance (TMR) between the systems composed of nonmagnetic electrode (NM)/ferromagnetic barrier (FB)/ferromagnet (FM) and NM/FB/FM/NM spin filtering tunnel junctions (SFTJs). Analyses of the results provide us possible ways of designing the systems which modulate the TMR in the negative magnetoresistance regime.

  5. Setting up tunneling conditions by means of Bohmian mechanics

    Energy Technology Data Exchange (ETDEWEB)

    Sanz, A S; Miret-Artes, S, E-mail: asanz@iff.csic.es, E-mail: s.miret@iff.csic.es [Instituto de Fisica Fundamental-CSIC, Serrano 123, 28006 Madrid (Spain)

    2011-12-02

    Usually tunneling is established after imposing some matching conditions on the (time-independent) wavefunction and its first derivative at the boundaries of a barrier. Here an alternative scheme is proposed to determine tunneling and estimate transmission probabilities in time-dependent problems, which takes advantage of the trajectory picture provided by Bohmian mechanics. From this theory, a general functional expression for the transmission probability in terms of the system initial state can be reached. This expression is used here to analyze tunneling properties and estimate transmissions in the case of initial Gaussian wave packets colliding with ramp-like barriers. (paper)

  6. Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2014-02-01

    Full Text Available In this study, silicon nitride (SiNx thin films were deposited on polyimide (PI substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD system. The gallium-doped zinc oxide (GZO thin films were deposited on PI and SiNx/PI substrates at room temperature (RT, 100 and 200 °C by radio frequency (RF magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~1000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI.

  7. ReS2-based interlayer tunnel field effect transistor

    Science.gov (United States)

    Mohammed, Omar B.; Movva, Hema C. P.; Prasad, Nitin; Valsaraj, Amithraj; Kang, Sangwoo; Corbet, Chris M.; Taniguchi, Takashi; Watanabe, Kenji; Register, Leonard F.; Tutuc, Emanuel; Banerjee, Sanjay K.

    2017-12-01

    In this study, we report the fabrication and characterization of a vertical resonant interlayer tunneling field-effect transistor created using exfoliated, few-layer rhenium disulfide (ReS2) flakes as the electrodes and hexagonal boron nitride as the tunnel barrier. Due to the Γ-point conduction band minimum, the ReS2 based system offers the possibility of resonant interlayer tunneling and associated low-voltage negative differential resistance (NDR) without rotational alignment of the electrode crystal orientations. Substantial NDR is observed, which appears consistent with in-plane crystal momentum conserving tunneling, although considerably broadened by scattering consistent within low mobility ReS2 flakes.

  8. Article Including Environmental Barrier Coating System

    Science.gov (United States)

    Lee, Kang N. (Inventor)

    2015-01-01

    An enhanced environmental barrier coating for a silicon containing substrate. The enhanced barrier coating may include a bond coat doped with at least one of an alkali metal oxide and an alkali earth metal oxide. The enhanced barrier coating may include a composite mullite bond coat including BSAS and another distinct second phase oxide applied over said surface.

  9. Characteristics of high-transmission-probability tunnel junctions for use as particle detectors

    International Nuclear Information System (INIS)

    Stricker, D.A.; Alba, G.P.; Anderson, C.C.; Bing, D.D.; Bland, R.W.; Dickson, S.C.; Dignan, T.G.; Gagnon, P.; Johnson, R.T.; Seneclauze, C.M.

    1988-01-01

    Interest in the problem of the galactic dark matter has stimulated development of particle detectors sensitive to very low energies. Superconducting tunnel junctions may be useful in such detectors. We describe here superconducting tunnel junctions with thin barriers which may be suitable for this purpose. We present I-V characteristics and data on the temperature dependence of the subgap tunneling current. We also present some scanning-electron-microscope observations of the thin films of the tunnel junctions

  10. Two-band modeling of narrow band gap and interband tunneling devices

    OpenAIRE

    Söderström, J. R.; Yu, E. T.; Jackson, M. K.; Rajakarunanayake, Y.; McGill, T. C.

    1990-01-01

    A two-band transfer matrix method has been developed to study tunneling currents in narrow gap and interband tunnel structures. This relatively simple model gives good agreement with recently reported experimental results for InAs/AlSb/InAs/AlSb/InAs double-barrier heterostructures and InAs/AlSb/GaSb/AlSb/InAs resonant interband tunneling devices, and should be useful in the design of new interband tunneling devices.

  11. Polarized electroluminescence from silicon nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Bagraev, Nikolay; Danilovsky, Eduard; Gets, Dmitry; Klyachkin, Leonid; Kudryavtsev, Andrey; Kuzmin, Roman; Malyarenko, Anna [Ioffe Physical-Technical Institute, 194021 St. Petersburg (Russian Federation); Mashkov, Vladimir [St. Petersburg State Polytechnical University, 195251 St. Petersburg (Russian Federation)

    2012-05-15

    We present the first findings of the circularly polarized electroluminescence (CPEL) from silicon nanostructures which are the p-type ultra-narrow silicon quantum well (Si-QW) confined by {delta}-barriers heavily doped with boron. The CPEL dependences on the forward current and lateral electric field show the circularly polarized light emission which appears to be caused by the exciton recombination through the negative-U dipole boron centers at the Si-QW-{delta}-barriers interface with the assistance of phosphorus donors. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Silicon spintronics: Progress and challenges

    International Nuclear Information System (INIS)

    Sverdlov, Viktor; Selberherr, Siegfried

    2015-01-01

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized

  13. Silicon spintronics: Progress and challenges

    Energy Technology Data Exchange (ETDEWEB)

    Sverdlov, Viktor; Selberherr, Siegfried, E-mail: Selberherr@TUWien.ac.at

    2015-07-14

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized.

  14. Silicon spintronics: Progress and challenges

    Science.gov (United States)

    Sverdlov, Viktor; Selberherr, Siegfried

    2015-07-01

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized.

  15. Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs

    Science.gov (United States)

    Wang, Hsiang-Chen; Chen, Meng-Chu; Lin, Yen-Sheng; Lu, Ming-Yen; Lin, Kuang-I.; Cheng, Yung-Chen

    2017-11-01

    The features of eight-period In0.2Ga0.8N/GaN quantum wells (QWs) with silicon (Si) doping in the first two to five quantum barriers (QBs) in the growth sequence of blue light-emitting diodes (LEDs) are explored. Epilayers of QWs' structures are grown on 20 pairs of In0.02Ga0.98N/GaN superlattice acting as strain relief layers (SRLs) on patterned sapphire substrates (PSSs) by a low-pressure metal-organic chemical vapor deposition (LP-MOCVD) system. Temperature-dependent photoluminescence (PL) spectra, current versus voltage ( I- V) curves, light output power versus injection current ( L- I) curves, and images of high-resolution transmission electron microscopy (HRTEM) of epilayers are measured. The consequences show that QWs with four Si-doped QBs have larger carrier localization energy (41 meV), lower turn-on (3.27 V) and breakdown (- 6.77 V) voltages, and higher output power of light of blue LEDs at higher injection current than other samples. Low barrier height of QBs in a four-Si-doped QB sample results in soft confinement potential of QWs and lower turn-on and breakdown voltages of the diode. HRTEM images give the evidence that this sample has relatively diffusive interfaces of QWs. Uniform spread of carriers among eight QWs and superior localization of carriers in each well are responsible for the enhancement of light output power, in particular, for high injection current in the four-Si-doped QB sample. The results demonstrate that four QBs of eight In0.2Ga0.8N/GaN QWs with Si doping not only reduce the quantum-confined Stark effect (QCSE) but also improve the distribution and localization of carriers in QWs for better optical performance of blue LEDs.

  16. Hypersonic Tunnel Facility (HTF)

    Data.gov (United States)

    Federal Laboratory Consortium — The Hypersonic Tunnel Facility (HTF) is a blow-down, non-vitiated (clean air) free-jet wind tunnel capable of testing large-scale, propulsion systems at Mach 5, 6,...

  17. Quantum theory of tunneling

    CERN Document Server

    Razavy, Mohsen

    2014-01-01

    In this revised and expanded edition, in addition to a comprehensible introduction to the theoretical foundations of quantum tunneling based on different methods of formulating and solving tunneling problems, different semiclassical approximations for multidimensional systems are presented. Particular attention is given to the tunneling of composite systems, with examples taken from molecular tunneling and also from nuclear reactions. The interesting and puzzling features of tunneling times are given extensive coverage, and the possibility of measurement of these times with quantum clocks are critically examined. In addition by considering the analogy between evanescent waves in waveguides and in quantum tunneling, the times related to electromagnetic wave propagation have been used to explain certain aspects of quantum tunneling times. These topics are treated in both non-relativistic as well as relativistic regimes. Finally, a large number of examples of tunneling in atomic, molecular, condensed matter and ...

  18. Road and Railroad Tunnels

    Data.gov (United States)

    Department of Homeland Security — Tunnels in the United States According to the HSIP Tiger Team Report, a tunnel is defined as a linear underground passageway open at both ends. This dataset is based...

  19. Transonic Dynamics Tunnel (TDT)

    Data.gov (United States)

    Federal Laboratory Consortium — The Transonic Dynamics Tunnel (TDT) is a continuous flow wind-tunnel facility capable of speeds up to Mach 1.2 at stagnation pressures up to one atmosphere. The TDT...

  20. Major SSC tunneling begins

    International Nuclear Information System (INIS)

    Anon.

    1993-01-01

    In Texas, work has been completed on the first on the Superconducting Supercollider's major shafts. Now a boring machine has started driving the fifty-four mile elliptical accelerator tunnel. To date, contracts let for the tunnel have come in far below preliminary estimates. Five of the main fourteen foot diameter tunnel contracts have been awarded for a total of 107.4 million dollars, about forty million dollars below estimates. These contracts represent %60 percent of the total tunneling project

  1. Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors

    International Nuclear Information System (INIS)

    Ganichev, S. D.; Ziemann, E.; Prettl, W.; Yassievich, I. N.; Istratov, A. A.; Weber, E. R.

    2000-01-01

    The enhancement of the emission rate of charge carriers from deep-level defects in electric field is routinely used to determine the charge state of the defects. However, only a limited number of defects can be satisfactorily described by the Poole-Frenkel theory. An electric field dependence different from that expected from the Poole-Frenkel theory has been repeatedly reported in the literature, and no unambiguous identification of the charge state of the defect could be made. In this article, the electric field dependencies of emission of carriers from DX centers in Al x Ga 1-x As:Te, Cu pairs in silicon, and Ge:Hg have been studied applying static and terahertz electric fields, and analyzed by using the models of Poole-Frenkel and phonon assisted tunneling. It is shown that phonon assisted tunneling and Poole-Frenkel emission are two competitive mechanisms of enhancement of emission of carriers, and their relative contribution is determined by the charge state of the defect and by the electric-field strength. At high-electric field strengths carrier emission is dominated by tunneling independently of the charge state of the impurity. For neutral impurities, where Poole-Frenkel lowering of the emission barrier does not occur, the phonon assisted tunneling model describes well the experimental data also in the low-field region. For charged impurities the transition from phonon assisted tunneling at high fields to Poole-Frenkel effect at low fields can be traced back. It is suggested that the Poole-Frenkel and tunneling models can be distinguished by plotting logarithm of the emission rate against the square root or against the square of the electric field, respectively. This analysis enables one to unambiguously determine the charge state of a deep-level defect. (c) 2000 The American Physical Society

  2. Tunneling anisotropic magnetoresistance driven by magnetic phase transition.

    Science.gov (United States)

    Chen, X Z; Feng, J F; Wang, Z C; Zhang, J; Zhong, X Y; Song, C; Jin, L; Zhang, B; Li, F; Jiang, M; Tan, Y Z; Zhou, X J; Shi, G Y; Zhou, X F; Han, X D; Mao, S C; Chen, Y H; Han, X F; Pan, F

    2017-09-06

    The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here, we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in α'-FeRh-based junctions driven by the magnetic phase transition of α'-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one α'-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the α'-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α'-FeRh magnetic electrode.

  3. Gate-all-around junctionless silicon transistors with atomically thin nanosheet channel (0.65 nm) and record sub-threshold slope (43 mV/dec)

    Science.gov (United States)

    Thirunavukkarasu, Vasanthan; Jhan, Yi-Ruei; Liu, Yan-Bo; Kurniawan, Erry Dwi; Lin, Yu Ru; Yang, Shang-Yi; Cheng, Che-Hsiang; Wu, Yung-Chun

    2017-01-01

    A silicon junctionless (JL) trench gate-all-around (GAA) nanowire field-effect transistor with an atomically thin channel thickness of 0.65 nm and a very thin oxide with a thickness of 12.3 nm are demonstrated experimentally. Experimental results indicate that this device with a channel thickness of 0.65 nm achieves a sub-threshold slope (SS) of 43 mV/decade, which is the best yet achieved by any reported JLFET. Owing to the atomically thin channel, this device has an extremely high ION/IOFF current ratio of >108. Furthermore, the atomically thin channel GAA JLFET exhibits a low threshold voltage (VTH) variation and negligible drain-induced barrier lowering (DIBL tunneling generation rate of 1.2 × 1024/cm2 s when the channel is scaled down to tunneling provides a means of achieving an SS value much lower than its fundamental physical limit.

  4. Quantum tunneling of magnetization in solids

    International Nuclear Information System (INIS)

    Stamp, P.C.E.; Barbara, B.

    1992-01-01

    Magnetic solids should, under certain circumstances, show macroscopic quantum behavior, in which coherence exists between completely distinct magnetization states, each involving a very large number of spins (∼10 12 spins). This article reviews the recent work in this field, concentrating particularly on macroscopic quantum tunneling (MQT) of magnetization. The two main phenomena discussed are the tunneling of magnetization in single-domain particles or grains (in which some 10 3 - 10 4 spins rotate together through an energy barrier), and the tunneling of domain walls in films or in bulk magnets; where walls containing ∼10 10 spins may tunnel off a pinning potential, or from one pinning center to another. Some attention is also given to the quantum nucleation of magnetization reversal in a bulk magnet, and to the quantum motion of other magnetic solitons (such as vortices). After a thorough analysis of the basic grain and wall tunneling phenomena, the authors continue on to a discussion of the various dissipative or decoherence mechanisms, which destroy the phase correlations involved in tunneling. The coupling of grain magnetization to phonons, photons, and electrons is shown to have little consequence for weakly-conducting or insulating grains. Domain walls couple to these and also to magnons and impurities or defects; the 3rd order coupling to magnons can have serious effects, but if one uses pure insulators at low temperatures, these can also be ignored

  5. Time scales of tunneling decay of a localized state

    International Nuclear Information System (INIS)

    Ban, Yue; Muga, J. G.; Sherman, E. Ya.; Buettiker, M.

    2010-01-01

    Motivated by recent time-domain experiments on ultrafast atom ionization, we analyze the transients and time scales that characterize, aside from the relatively long lifetime, the decay of a localized state by tunneling. While the tunneling starts immediately, some time is required for the outgoing flux to develop. This short-term behavior depends strongly on the initial state. For the initial state, tightly localized so that the initial transients are dominated by over-the-barrier motion, the time scale for flux propagation through the barrier is close to the Buettiker-Landauer traversal time. Then a quasistationary, slow-decay process follows, which sets ideal conditions for observing diffraction in time at longer times and distances. To define operationally a tunneling time at the barrier edge, we extrapolate backward the propagation of the wave packet that escaped from the potential. This extrapolated time is considerably longer than the time scale of the flux and density buildup at the barrier edge.

  6. Bias dependence of tunnel magnetoresistance in spin filtering tunnel junctions: Experiment and theory

    Science.gov (United States)

    Lüders, U.; Bibes, M.; Fusil, S.; Bouzehouane, K.; Jacquet, E.; Sommers, C. B.; Contour, J.-P.; Bobo, J.-F.; Barthélémy, A.; Fert, A.; Levy, P. M.

    2007-10-01

    A spin filter is a type of magnetic tunnel junction in which only one of the electrodes is magnetic and the insulating barrier is ferro- or ferrimagnetic. We report on spin-dependent transport measurements and their theoretical analysis in epitaxial spin filters integrating a tunnel barrier of the high-Curie-temperature ferrimagnetic spinel NiFe2O4 , with half-metallic La2/3Sr1/3MnO3 and Au electrodes. A positive tunnel magnetoresonance of up to ˜50% is obtained at low temperature, which we find decreases with bias voltage. In view of these experimental results, we propose a theoretical treatment of the transport properties of spin filters with epitaxial magnetic barriers, based on an elliptical variation of the decay rates within the spin-dependent gaps in analogy with what was calculated for nonmagnetic barrier materials such as MgO or SrTiO3 . Whereas the spin filtering efficiency for zero bias is of one sign, we show that this can easily change with bias; the degree of change hinges on the energy variation of the majority and minority spin decay rates of the transmission across the barrier. We point out some shortcomings of approaches based on models in which the transmission is related to spin-dependent barrier heights, and some implications for future experimental and theoretical research on spin filters.

  7. Resonant electron tunnelling assisted by charged domain walls in multiferroic tunnel junctions

    Science.gov (United States)

    Sanchez-Santolino, Gabriel; Tornos, Javier; Hernandez-Martin, David; Beltran, Juan I.; Munuera, Carmen; Cabero, Mariona; Perez-Muñoz, Ana; Ricote, Jesus; Mompean, Federico; Garcia-Hernandez, Mar; Sefrioui, Zouhair; Leon, Carlos; Pennycook, Steve J.; Muñoz, Maria Carmen; Varela, Maria; Santamaria, Jacobo

    2017-07-01

    The peculiar features of domain walls observed in ferroelectrics make them promising active elements for next-generation non-volatile memories, logic gates and energy-harvesting devices. Although extensive research activity has been devoted recently to making full use of this technological potential, concrete realizations of working nanodevices exploiting these functional properties are yet to be demonstrated. Here, we fabricate a multiferroic tunnel junction based on ferromagnetic La0.7Sr0.3MnO3 electrodes separated by an ultrathin ferroelectric BaTiO3 tunnel barrier, where a head-to-head domain wall is constrained. An electron gas stabilized by oxygen vacancies is confined within the domain wall, displaying discrete quantum-well energy levels. These states assist resonant electron tunnelling processes across the barrier, leading to strong quantum oscillations of the electrical conductance.

  8. Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

    Science.gov (United States)

    König, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

    2017-01-01

    All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements. PMID:28425460

  9. Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

    Science.gov (United States)

    König, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

    2017-04-01

    All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements.

  10. Photon scanning tunneling microscope in combination with a force microscope

    NARCIS (Netherlands)

    Moers, M.H.P.; Moers, M.H.P.; Tack, R.G.; van Hulst, N.F.; Bölger, B.; Bölger, B.

    1994-01-01

    The simultaneous operation of a photon scanning tunneling microscope with an atomic force microscope is presented. The use of standard atomic force silicon nitride cantilevers as near-field optical probes offers the possibility to combine the two methods. Vertical forces and torsion are detected

  11. Dynamics of tunneling ionization using Bohmian mechanics

    Science.gov (United States)

    Douguet, Nicolas; Bartschat, Klaus

    2018-01-01

    Recent attoclock experiments and theoretical studies regarding the strong-field ionization of atoms by few-cycle infrared pulses revealed features that have attracted much attention. Here we investigate tunneling ionization and the dynamics of the electron probability using Bohmian mechanics. We consider a one-dimensional problem to illustrate the underlying mechanisms of the ionization process. It is revealed that in the major part of the below-the-barrier ionization regime, in an intense and short infrared pulse, the electron does not tunnel through the entire barrier, but rather starts already from the classically forbidden region. Moreover, we highlight the correspondence between the probability of locating the electron at a particular initial position and its asymptotic momentum. Bohmian mechanics also provides a natural definition of mean tunneling time and exit position, taking account of the time dependence of the barrier. Finally, we find that the electron can exit the barrier with significant kinetic energy, thereby corroborating the results of a recent study [N. Camus et al., Phys. Rev. Lett. 119, 023201 (2017), 10.1103/PhysRevLett.119.023201].

  12. Barrier for Continuous-Crystal-Growth Crucible

    Science.gov (United States)

    Skutch, M. E.; Piotrowski, P. A.

    1983-01-01

    Properly designed openings permit free flow of melt while restraining pellets. Redesigned partition between growth region and melt-replenishment region of crystal-growth crucible makes it less likely crucible will run out of feed material in middle of cycle. Supply of molten silicon is maintained by addition of silicon pellets to compartment at one end of heated crucible, and partition or barrier is required to hold pellets while allowing melted silicon to flow from compartment.

  13. Coherent tunneling adiabatic passage with the alternating coupling scheme

    International Nuclear Information System (INIS)

    Jong, L M; Greentree, A D; Conrad, V I; Hollenberg, L C L; Jamieson, D N

    2009-01-01

    The use of adiabatic passage techniques to mediate particle transport through real space, rather than phase space, is becoming an interesting possibility. We have investigated the properties of coherent tunneling adiabatic passage (CTAP) with alternating tunneling matrix elements. This coupling scheme, not previously considered in the donor in silicon paradigm, provides an interesting route to long-range quantum transport. We introduce simplified coupling protocols and transient eigenspectra as well as a realistic gate design for this transport protocol. Using a pairwise treatment of the tunnel couplings for a five-donor device with 30 nm donor spacings, 120 nm total chain length, we estimate the timescale required for adiabatic operation to be ∼70 ns, a time well within the measured electron spin and estimated charge relaxation times for phosphorus donors in silicon.

  14. Amorphous Silicon-Carbon Nanostructure Photovoltaic Devices

    OpenAIRE

    Schriver, Maria Christine

    2012-01-01

    A novel solar cell architecture made completely from the earth abundant elements silicon and carbon has been developed. Hydrogenated amorphous silicon (aSi:H), rather than crystalline silicon, is used as the active material due to its high absorption through a direct band gap of 1.7eV, well matched to the solar spectrum to ensure the possibility of improved cells in this architecture with higher efficiencies. The cells employ a Schottky barrier design wherein the amorphous silicon absorber la...

  15. High Current Density InAsSb/GaSb Tunnel Field Effect Transistors

    OpenAIRE

    Dey, Anil; Borg, Mattias; Ganjipour, Bahram; Ek, Martin; Dick Thelander, Kimberly; Lind, Erik; Nilsson, Peter; Thelander, Claes; Wernersson, Lars-Erik

    2012-01-01

    Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest due to their potential for low power operation at room temperature. The devices are based on inter-band tunneling which could limit the on-current since the charge carriers must tunnel through a barrier to traverse the device. The InAs/GaSb heterostructure forms a broken type II band alignment which enables inter-band tunneling without a barrier, allowing high on-currents. We ha...

  16. Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer

    Science.gov (United States)

    Sato, Shoichi; Nakane, Ryosho; Hada, Takato; Tanaka, Masaaki

    2017-12-01

    We demonstrate that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (⩽2 nm) in Fe /Mg /MgO /n+-Si tunnel junctions. In diode-type vertical three-terminal devices fabricated on a Si substrate, we observe the narrower three-terminal Hanle (N-3TH) signals indicating true spin injection into Si and estimate the spin polarization in Si to be 16% when the thickness of the Mg insertion layer is 1 nm, whereas no N-3TH signal is observed without the Mg insertion. This means that the spin injection/extraction efficiency is enhanced by suppressing the formation of a magnetically dead layer at the Fe/MgO interface. We also observe clear spin transport signals, such as nonlocal Hanle signals and spin-valve signals, in a lateral four-terminal device with the same Fe /Mg /MgO /n+-Si tunnel junctions fabricated on a Si-on-insulator substrate. It is found that both the intensity and linewidth of the spin signals are affected by the geometrical effects (device geometry and size). We have derived analytical functions taking into account the device structures, including channel thickness and electrode size, and estimated important parameters: spin lifetime and spin polarization. Our analytical functions explain the experimental results very well. Our study shows the importance of suppressing a magnetically dead layer and provides a unified understanding of spin injection/detection signals in different device geometries.

  17. Particle and chemical control using tunnel flow

    Energy Technology Data Exchange (ETDEWEB)

    Chilese, Frank; Delgado, Gildardo R.; Wack, Daniel; Torczynski, John R.

    2017-09-12

    An apparatus for contaminant control, having: a first optical assembly including: a first light homogenizer tunnel with: a first end connected to an extreme ultra-violet light source, a second end in communication with a destination chamber, a first enclosed space, and, a first gas input arranged to introduce a first gas such that the first gas flows in a first direction toward the first end and in a second direction toward the second end. The apparatus alternately having: a second optical assembly including: a second light homogenizer tunnel with: a third end connected to an extreme ultra-violet light source, a fourth end in communication with a destination chamber, a second enclosed space, a diffusion barrier tube including: a fifth end facing the fourth end and a sixth end in communication with a destination chamber, and a second gas input between the second light homogenizer tunnel and the diffusion tube.

  18. MOS structures containing silicon nanoparticles for memory device applications

    Energy Technology Data Exchange (ETDEWEB)

    Nedev, N; Zlatev, R [Instituto de IngenierIa, Universidad Autonoma de Baja California, Benito Juarez Blvd., s/n, C.P. 21280, Mexicali, Baja California (Mexico); Nesheva, D; Manolov, E; Levi, Z [Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); Brueggemann, R; Meier, S [Institute of Physics, Carl von Ossietzky University, Oldenburg, D-26111 Oldenburg (Germany)], E-mail: nicola@iing.mxl.uabc.mx

    2008-05-01

    Metal-oxide-silicon structures containing layers with amorphous or crystalline silicon nanoparticles in a silicon oxide matrix are fabricated by sequential physical vapour deposition of SiO{sub x} (x = 1.15) and RF sputtering of SiO{sub 2} on n-type crystalline silicon, followed by high temperature annealing in an inert gas ambient. Depending on the annealing temperature, 700 deg. C or 1000 deg. C, amorphous or crystalline silicon nanoparticles are formed in the silicon oxide matrix. The annealing process is used not only for growing nanoparticles but also to form a dielectric layer with tunnelling thickness at the silicon/insulator interface. High frequency C-V measurements demonstrate that both types of structures can be charged negatively or positively by applying a positive or negative voltage on the gate. The structures with amorphous silicon nanoparticles show several important advantages compared to the nanocrystal ones, such as lower defect density at the interface between the crystalline silicon wafer and the tunnel silicon oxide, better retention characteristics and better reliability.

  19. Electronic transport through organophosphonate monolayers on silicon/silicon dioxide substrates

    Energy Technology Data Exchange (ETDEWEB)

    Bora, Achyut; Pathak, Anshuma; Tornow, Marc [Institut fuer Halbleitertechnik, TU Braunschweig (Germany); Liao, Kung-Ching; Schwartz, Jeffrey [Department of Chemistry, Princeton University, NJ (United States); Cattani-Scholz, Anna; Abstreiter, Gerhard [Walter Schottky Institut, TU Muenchen (Germany)

    2011-07-01

    Understanding the electronic transport through layered systems of organic functional layers on semiconductor surfaces is of major importance for future applications in nanoelectronics, photovoltaics and sensors. We have prepared self-assembled monolayers (SAMs) of 9,10-diphenyl-2,6-diphosphono-anthracene and 11-hydroxyundecyl phosphonic acid precursors on highly p-doped silicon surfaces coated with a 1 nm SiO{sub 2} layer. Contact angle, AFM and ellipsometry evidenced the homogeneity of the formed SAMs, and their thickness was determined to be 0.82{+-}0.07 nm and 1.13{+-}0.09 nm, respectively. We provided large area electrical contacts on top of the SAMs by a hanging Hg drop electrode. The measured I-V characteristics revealed an enhanced conductance of the aromatic vs. the aliphatic compounds, with current densities of the order of 10 A/m{sup 2} and 0.01 A/m{sup 2}, at 0.5 V, respectively. We analyzed the data in terms of non-resonant tunneling through the combined oxide-SAM barrier and found good qualitative agreement up to 0.2 V bias. Preliminary measurements on organized bilayers of anthracene bisphosphonates that were grown using techniques of coordination chemistry are discussed, too.

  20. Silicon based nanogap device for studying electrical transport phenomena in molecule-nanoparticle hybrids

    International Nuclear Information System (INIS)

    Strobel, Sebastian; Hernandez, Rocio Murcia; Hansen, Allan G; Tornow, Marc

    2008-01-01

    We report the fabrication and characterization of vertical nanogap electrode devices using silicon-on-insulator substrates. Using only standard silicon microelectronic process technology, nanogaps down to 26 nm electrode separation were prepared. Transmission electron microscopy cross-sectional analysis revealed the well defined material architecture of the nanogap, comprising two electrodes of dissimilar geometrical shape. This asymmetry is directly reflected in transport measurements on molecule-nanoparticle hybrid systems formed by self-assembling a monolayer of mercaptohexanol on the electrode surface and the subsequent dielectrophoretic trapping of 30 nm diameter Au nanoparticles. The observed Coulomb staircase I-V characteristic measured at T = 4.2 K is in excellent agreement with theoretical modelling, whereby junction capacitances of the order of a few 10 -18 farad and asymmetric resistances of 30 and 300 MΩ, respectively, are also supported well by our independent estimates for the formed double barrier tunnelling system. We propose our nanoelectrode system for integrating novel functional electronic devices such as molecular junctions or nanoparticle hybrids into existing silicon microelectronic process technology

  1. Silicon based nanogap device for studying electrical transport phenomena in molecule-nanoparticle hybrids

    Energy Technology Data Exchange (ETDEWEB)

    Strobel, Sebastian; Hernandez, Rocio Murcia [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, 85748 Garching (Germany); Hansen, Allan G; Tornow, Marc [Institut fuer Halbleitertechnik, Technische Universitaet Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany)], E-mail: m.tornow@tu-bs.de

    2008-09-17

    We report the fabrication and characterization of vertical nanogap electrode devices using silicon-on-insulator substrates. Using only standard silicon microelectronic process technology, nanogaps down to 26 nm electrode separation were prepared. Transmission electron microscopy cross-sectional analysis revealed the well defined material architecture of the nanogap, comprising two electrodes of dissimilar geometrical shape. This asymmetry is directly reflected in transport measurements on molecule-nanoparticle hybrid systems formed by self-assembling a monolayer of mercaptohexanol on the electrode surface and the subsequent dielectrophoretic trapping of 30 nm diameter Au nanoparticles. The observed Coulomb staircase I-V characteristic measured at T = 4.2 K is in excellent agreement with theoretical modelling, whereby junction capacitances of the order of a few 10{sup -18} farad and asymmetric resistances of 30 and 300 M{omega}, respectively, are also supported well by our independent estimates for the formed double barrier tunnelling system. We propose our nanoelectrode system for integrating novel functional electronic devices such as molecular junctions or nanoparticle hybrids into existing silicon microelectronic process technology.

  2. Silicon based nanogap device for studying electrical transport phenomena in molecule-nanoparticle hybrids.

    Science.gov (United States)

    Strobel, Sebastian; Hernández, Rocío Murcia; Hansen, Allan G; Tornow, Marc

    2008-09-17

    We report the fabrication and characterization of vertical nanogap electrode devices using silicon-on-insulator substrates. Using only standard silicon microelectronic process technology, nanogaps down to 26 nm electrode separation were prepared. Transmission electron microscopy cross-sectional analysis revealed the well defined material architecture of the nanogap, comprising two electrodes of dissimilar geometrical shape. This asymmetry is directly reflected in transport measurements on molecule-nanoparticle hybrid systems formed by self-assembling a monolayer of mercaptohexanol on the electrode surface and the subsequent dielectrophoretic trapping of 30 nm diameter Au nanoparticles. The observed Coulomb staircase I-V characteristic measured at T = 4.2 K is in excellent agreement with theoretical modelling, whereby junction capacitances of the order of a few 10(-18) farad and asymmetric resistances of 30 and 300 MΩ, respectively, are also supported well by our independent estimates for the formed double barrier tunnelling system. We propose our nanoelectrode system for integrating novel functional electronic devices such as molecular junctions or nanoparticle hybrids into existing silicon microelectronic process technology.

  3. Investigation of silicide-induced-dopant-activation for steep tunnel junction in tunnel field effect transistor (TFET)

    Science.gov (United States)

    Kim, Sihyun; Kwon, Dae Woong; Park, Euyhwan; Lee, Junil; Lee, Roongbin; Lee, Jong-Ho; Park, Byung-Gook

    2018-02-01

    Numerous researches for making steep tunnel junction within tunnel field-effect transistor (TFET) have been conducted. One of the ways to make an abrupt junction is source/drain silicidation, which uses the phenomenon often called silicide-induced-dopant-segregation. It is revealed that the silicide process not only helps dopants to pile up adjacent to the metal-silicon alloy, also induces the dopant activation, thereby making it possible to avoid additional high temperature process. In this report, the availability of dopant activation induced by metal silicide process was thoroughly investigated by diode measurement and device simulation. Metal-silicon (MS) diodes having p+ and n+ silicon formed on the p- substrate exhibit the characteristics of ohmic and pn diodes respectively, for both the samples with and without high temperature annealing. The device simulation for TFETs with dopant-segregated source was also conducted, which verified enhanced DC performance.

  4. Silicon nano crystal-based non-volatile memory devices

    International Nuclear Information System (INIS)

    Ng, C.Y.; Chen, T.P.; Sreeduth, D.; Chen, Q.; Ding, L.; Du, A.

    2006-01-01

    In this work, we have investigated the performance and reliability of a Flash memory based on silicon nanocrystal synthesized with very-low energy ion beams. The devices are fabricated with a conventional CMOS process and the size of the nanocrystal is ∼ 4 nm as determined from TEM measurement. Electrical properties of the devices with a tunnel oxide of either 3 nm or 7 nm are evaluated. The devices exhibit good endurance up to 10 5 W/E cycles even at the high operation temperature of 85 deg. C for both the tunnel oxide thicknesses. For the thicker tunnel oxide (i.e., the 7-nm tunnel oxide), a good retention performance with an extrapolated 10-year memory window of ∼ 0.3 V (or ∼ 20% of charge lose after 10 years) is achieved. However, ∼ 70% of charge loss after 10 years is expected for the thinner tunnel oxide (i.e., the 3-nm tunnel oxide)

  5. The possibility to determine a constant of spin-orbit interaction by scanning tunneling microscopy method

    International Nuclear Information System (INIS)

    Khotkevich, N.V.; Kolesnichenko, Yu.A.; Vovk, N.P.

    2016-01-01

    The electron tunneling from the quasi-two-dimensional (surface) states with the spin-orbit interaction into bulk-mode states is studied in the framework of a model of an infinitely thin inhomogeneous tunnel magnetic barrier. The influence of the scattering of quasi-two-dimensional electrons by a single magnetic defect on the tunnel current is analyzed. Analytic formulas for the conductance of a tunnel point-contact as a function of its distance from the defect are obtained. It is shown that the analysis of the local magnetization density around the defect by means of spin-polarized scanning tunneling microscopy allows finding the constant of spin orbit interaction.

  6. New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

    Directory of Open Access Journals (Sweden)

    Jimy Encomendero

    2017-10-01

    Full Text Available For the past two decades, repeatable resonant tunneling transport of electrons in III-nitride double barrier heterostructures has remained elusive at room temperature. In this work we theoretically and experimentally study III-nitride double-barrier resonant tunneling diodes (RTDs, the quantum transport characteristics of which exhibit new features that are unexplainable using existing semiconductor theory. The repeatable and robust resonant transport in our devices enables us to track the origin of these features to the broken inversion symmetry in the uniaxial crystal structure, which generates built-in spontaneous and piezoelectric polarization fields. Resonant tunneling transport enabled by the ground state as well as by the first excited state is demonstrated for the first time over a wide temperature window in planar III-nitride RTDs. An analytical transport model for polar resonant tunneling heterostructures is introduced for the first time, showing a good quantitative agreement with experimental data. From this model we realize that tunneling transport is an extremely sensitive measure of the built-in polarization fields. Since such electric fields play a crucial role in the design of electronic and photonic devices, but are difficult to measure, our work provides a completely new method to accurately determine their magnitude for the entire class of polar heterostructures.

  7. Tunneling spectroscopy in NbN based Josephson junctions

    International Nuclear Information System (INIS)

    Chicault, R.; Villegier, J.C.

    1984-08-01

    Tunneling spectroscopy in high quality NbN-oxide-Pb(In) diodes offers a direct observation of various NbN and Pb phonon frequences as other vibrating modes existing near the tunnel barrier. The large number of peaks attribuated to dips in the transverses and longitudinal acoustic branches of NbN dispersion curves are found to confirm the previous theory developing the contribution of these modes to the strong coupling and high Tc behavior of NbN

  8. Robust spin transfer torque in antiferromagnetic tunnel junctions

    KAUST Repository

    Saidaoui, Hamed Ben Mohamed

    2017-04-18

    We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling electrical manipulation of the Néel antiferromagnetic order parameter is out of plane, ∼n×p, while the torque competing with the antiferromagnetic exchange is in plane, ∼n×(p×n). Here, p and n are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows behavior similar to that in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias, while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than that in antiferromagnetic metallic spin valves due to the tunneling nature of spin transport.

  9. Charge Transport in 2D DNA Tunnel Junction Diodes

    KAUST Repository

    Yoon, Minho

    2017-11-06

    Recently, deoxyribonucleic acid (DNA) is studied for electronics due to its intrinsic benefits such as its natural plenitude, biodegradability, biofunctionality, and low-cost. However, its applications are limited to passive components because of inherent insulating properties. In this report, a metal-insulator-metal tunnel diode with Au/DNA/NiOx junctions is presented. Through the self-aligning process of DNA molecules, a 2D DNA nanosheet is synthesized and used as a tunneling barrier, and semitransparent conducting oxide (NiOx ) is applied as a top electrode for resolving metal penetration issues. This molecular device successfully operates as a nonresonant tunneling diode, and temperature-variable current-voltage analysis proves that Fowler-Nordheim tunneling is a dominant conduction mechanism at the junctions. DNA-based tunneling devices appear to be promising prototypes for nanoelectronics using biomolecules.

  10. Microsystem Aeromechanics Wind Tunnel

    Data.gov (United States)

    Federal Laboratory Consortium — The Microsystem Aeromechanics Wind Tunnel advances the study of fundamental flow physics relevant to micro air vehicle (MAV) flight and assesses vehicle performance...

  11. InAs/Si Hetero-Junction Nanotube Tunnel Transistors

    KAUST Repository

    Hanna, Amir

    2015-04-29

    Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ‘ON’ state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling area while achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. Numerical simulations has shown that a 10 nm thin nanotube TFET with a 100 nm core gate has a 5×normalized output current compared to a 10 nm diameter GAA NW TFET.

  12. Communication: Tunnelling splitting in the phosphine molecule

    Energy Technology Data Exchange (ETDEWEB)

    Sousa-Silva, Clara; Tennyson, Jonathan; Yurchenko, Sergey N. [Department of Physics and Astronomy, University College London, London WC1E 6BT (United Kingdom)

    2016-09-07

    Splitting due to tunnelling via the potential energy barrier has played a significant role in the study of molecular spectra since the early days of spectroscopy. The observation of the ammonia doublet led to attempts to find a phosphine analogous, but these have so far failed due to its considerably higher barrier. Full dimensional, variational nuclear motion calculations are used to predict splittings as a function of excitation energy. Simulated spectra suggest that such splittings should be observable in the near infrared via overtones of the ν{sub 2} bending mode starting with 4ν{sub 2}.

  13. Magnetic tunnel junction thermocouple for thermoelectric power harvesting

    Science.gov (United States)

    Böhnert, T.; Paz, E.; Ferreira, R.; Freitas, P. P.

    2018-05-01

    The thermoelectric power generated in magnetic tunnel junctions (MTJs) is determined as a function of the tunnel barrier thickness for a matched electric circuit. This study suggests that lower resistance area product and higher tunnel magnetoresistance will maximize the thermoelectric power output of the MTJ structures. Further, the thermoelectric behavior of a series of two MTJs, a MTJ thermocouple, is investigated as a function of its magnetic configurations. In an alternating magnetic configurations the thermovoltages cancel each other, while the magnetic contribution remains. A large array of MTJ thermocouples could amplify the magnetic thermovoltage signal significantly.

  14. Doped Josephson tunneling junction for use in a sensitive IR detector

    International Nuclear Information System (INIS)

    Fletcher, J.C.; Saffren, M.M.

    1975-01-01

    A superconductive tunneling device having a modified tunnel barrier capable of supporting Josephson tunneling current is provided. The tunnel barrier located between a pair of electrodes includes a molecular species which is capable of coupling incident radiation of a spectrum characteristic of the molecular species into the tunnel barrier. The coupled radiation modulates the known Josephson characteristics of the superconducting device. As a result of the present invention, a superconductive tunneling device can be tuned or made sensitive to a particular radiation associated with the dopant molecular species. The present invention is particularly useful in providing an improved infrared detector. The tunnel barrier region can be, for example, an oxide of an electrode or frozen gas. The molecular species can be intermixed with the barrier region such as the frozen gas or deposited as one or more layers of molecules on the barrier region. The deposited molecules of the molecular species are unbonded and capable of responding to a radiation characteristic of the molecules. Semi-conductor material can be utilized as the molecular species to provide an increased selective bandwidth response. Finally, appropriate detector equipment can be utilized to measure the modulation of any of the Josephson characteristics such as critical current, voltage steps, Lambe-Jaklevic peaks and plasma frequency. (auth)

  15. Towards spin injection into silicon

    Energy Technology Data Exchange (ETDEWEB)

    Dash, S.P.

    2007-08-15

    Si has been studied for the purpose of spin injection extensively in this thesis. Three different concepts for spin injection into Si have been addressed: (1) spin injection through a ferromagnet-Si Schottky contact, (2) spin injection using MgO tunnel barriers in between the ferromagnet and Si, and (3) spin injection from Mn-doped Si (DMS) as spin aligner. (1) FM-Si Schottky contact for spin injection: To be able to improve the interface qualities one needs to understand the atomic processes involved in the formation of silicide phases. In order to obtain more detailed insight into the formation of such phases the initial stages of growth of Co and Fe were studied in situ by HRBS with monolayer depth resolution.(2) MgO tunnel barrier for spin injection into Si: The fabrication and characterization of ultra-thin crystalline MgO tunnel barriers on Si (100) was presented. (3) Mn doped Si for spin injection: Si-based diluted magnetic semiconductor samples were prepared by doping Si with Mn by two different methods i) by Mn ion implantation and ii) by in-diffusion of Mn atoms (solid state growth). (orig.)

  16. Scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Binnig, G.; Rohrer, H.

    1983-01-01

    Based on vacuum tunneling, a novel type of microscope, the scanning tunneling microscope (STM) was developed. It has an unprecedented resolution in real space on an atomic scale. The authors review the important technical features, illustrate the power of the STM for surface topographies and discuss its potential in other areas of science and technology. (Auth.)

  17. Electron tunneling in chemistry

    International Nuclear Information System (INIS)

    Zamaraev, K.I.; Khajrutdinov, R.F.; Zhdanov, V.P.; Molin, Yu.N.

    1985-01-01

    Results of experimental and theoretical investigations are outlined systematically on electron tunnelling in chemical reactions. Mechanism of electron transport to great distances is shown to be characteristic to chemical compounds of a wide range. The function of tunnel reactions is discussed for various fields of chemistry, including radiation chemistry, electrochemistry, chemistry of solids, chemistry of surface and catalysis

  18. Characterization of 10,12-pentacosadiynoic acid Langmuir–Blodgett monolayers and their use in metal–insulator–metal tunnel devices

    Directory of Open Access Journals (Sweden)

    Saumya Sharma

    2014-11-01

    Full Text Available The characterization of Langmuir–Blodgett thin films of 10,12-pentacosadiynoic acid (PDA and their use in metal–insulator–metal (MIM devices were studied. The Langmuir monolayer behavior of the PDA film was studied at the air/water interface using surface tension–area isotherms of polymeric and monomeric PDA. Langmuir–Blodgett (LB, vertical deposition and Langmuir–Schaefer (LS, horizontal deposition techniques were used to deposit the PDA film on various substrates (glass, quartz, silicon, and nickel-coated film on glass. The electrochemical, electrical and optical properties of the LB and LS PDA films were studied using cyclic voltammetry, current–voltage characteristics (I–V, and UV–vis and FTIR spectroscopies. Atomic force microscopy measurements were performed in order to analyze the surface morphology and roughness of the films. A MIM tunnel diode was fabricated using a PDA monolayer assembly as the insulating barrier, which was sandwiched between two nickel layers. The precise control of the thickness of the insulating monolayers proved critical for electron tunneling to take place in the MIM structure. The current–voltage characteristics of the MIM diode revealed tunneling behavior in the fabricated Ni–PDA LB film–Ni structures.

  19. Tunnel fire dynamics

    CERN Document Server

    Ingason, Haukur; Lönnermark, Anders

    2015-01-01

    This book covers a wide range of issues in fire safety engineering in tunnels, describes the phenomena related to tunnel fire dynamics, presents state-of-the-art research, and gives detailed solutions to these major issues. Examples for calculations are provided. The aim is to significantly improve the understanding of fire safety engineering in tunnels. Chapters on fuel and ventilation control, combustion products, gas temperatures, heat fluxes, smoke stratification, visibility, tenability, design fire curves, heat release, fire suppression and detection, CFD modeling, and scaling techniques all equip readers to create their own fire safety plans for tunnels. This book should be purchased by any engineer or public official with responsibility for tunnels. It would also be of interest to many fire protection engineers as an application of evolving technical principles of fire safety.

  20. A metal/insulator tunnel transistor with 16 nm channel length

    OpenAIRE

    Sasajima, Ryouta; Fujimaru, Kouji; Matsumura, Hideki

    1999-01-01

    A nanometer transistor, metal/insulator tunnel transistor (MITT), which consists of only metal and insulator is experimentally studied. In the MITT, the Fowler-Nordheim tunneling currents through an insulator in lateral metal/insulator/metal structure are controlled by changing a voltage at a gate electrode upon the middle insulator, due to variation of tunnel-barrier thickness at the insulator. It is demonstrated that the MITT with 16 nm channel length fabricated by conventional photolithogr...

  1. Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions.

    Science.gov (United States)

    Loong, Li Ming; Qiu, Xuepeng; Neo, Zhi Peng; Deorani, Praveen; Wu, Yang; Bhatia, Charanjit S; Saeys, Mark; Yang, Hyunsoo

    2014-09-30

    While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic tunnel junctions (MTJs) can be significantly affected by the introduction of controllable mechanical strain, achieving an enhancement factor of ~2 in the experimental tunneling magnetoresistance (TMR) ratio. We further correlate this strain-enhanced TMR with coherent spin tunneling through the MgO barrier. Moreover, the strain-enhanced TMR is analyzed using non-equilibrium Green's function (NEGF) quantum transport calculations. Our results help elucidate the TMR mechanism at the atomic level and can provide a new way to enhance, as well as tune, the quantum properties in nanoscale materials and devices.

  2. Time evolution of tunneling in a thermal medium: Environment-driven excited tunneling

    International Nuclear Information System (INIS)

    Matsumoto, Sh.; Yoshimura, M.

    2004-01-01

    Time evolution of tunneling phenomena proceeding in a thermal medium is studied using a standard model of environmental interaction. A semiclassical probability formula for the particle motion in a metastable state of a one-dimensional system put in a thermal medium is combined with the formula of the quantum penetration factor through a potential barrier to derive the tunneling rate in the medium. The effect of environment, its influence on time evolution in particular, is clarified in our real-time formalism. A nonlinear resonance effect is shown to enhance the tunneling rate at finite times of order 2/η, with η the friction coefficient unless η is too small. In the linear approximation this effect has relevance to the parametric resonance. This effect enhances the possibility of early termination of the cosmological phase transition much prior to the typical Hubble time

  3. Construction of a four tip scanning tunneling microscope/scanning electron microscope combination and conductivity measurements of silicide nanowires; Aufbau einer Vierspitzen-Rastertunnelmikroskop/Rasterelektronenmikroskop-Kombination und Leitfaehigkeitsmessungen an Silizid Nanodraehten

    Energy Technology Data Exchange (ETDEWEB)

    Zubkov, Evgeniy

    2013-09-01

    In this work the combination of a four-tip scanning tunneling microscope with a scanning electron microscope is presented. By means of this apparatus it is possible to perform the conductivity measurements on the in-situ prepared nanostructures in ultra-high vacuum. With the aid of a scanning electron microscope (SEM), it becomes possible to position the tunneling tips of the four-tip scanning tunneling microscope (STM), so that an arrangement for a four-point probe measurement on nanostructures can be obtained. The STM head was built according to the novel coaxial Beetle concept. This concept allows on the one hand, a very compact arrangement of the components of the STM and on the other hand, the new-built STM head has a good mechanical stability, in order to achieve atomic resolution with all four STM units. The atomic resolution of the STM units was confirmed by scanning a Si(111)-7 x 7 surface. The thermal drift during the STM operation, as well as the resonant frequencies of the mechanical structure of the STM head, were determined. The scanning electron microscope allows the precise and safe navigation of the tunneling tips on the sample surface. Multi tip spectroscopy with up to four STM units can be performed synchronously. To demonstrate the capabilities of the new-built apparatus the conductivity measurements were carried out on metallic yttrium silicide nanowires. The nanowires were prepared by the in-situ deposition of yttrium on a heated Si(110) sample surface. Current-voltage curves were recorded on the nanowires and on the wetting layer in-between. The curves indicate an existence of the Schottky barrier between the yttrium silicide nanowires and the silicon bulk. By means of the two-tip measurements with a gate, the insulating property of the Schottky barrier has been confirmed. Using this Schottky barrier, it is possible to limit the current to the nanowire and to prevent it from flowing through the silicon bulk. A four-tip resistance measurement

  4. Inelastic electron tunneling spectroscopy of a single nuclear spin.

    Science.gov (United States)

    Delgado, F; Fernández-Rossier, J

    2011-08-12

    Detection of a single nuclear spin constitutes an outstanding problem in different fields of physics such as quantum computing or magnetic imaging. Here we show that the energy levels of a single nuclear spin can be measured by means of inelastic electron tunneling spectroscopy (IETS). We consider two different systems, a magnetic adatom probed with scanning tunneling microscopy and a single Bi dopant in a silicon nanotransistor. We find that the hyperfine coupling opens new transport channels which can be resolved at experimentally accessible temperatures. Our simulations evince that IETS yields information about the occupations of the nuclear spin states, paving the way towards transport-detected single nuclear spin resonance.

  5. Steep Turn On/Off Green Tunnel Transistors

    Science.gov (United States)

    2010-12-17

    electric field is used. The TCAD device simulator MEDICI implements the local tunneling model of Eq. (2.20) and has option on choice of electric field...3.4, which is an Id-Vg simulation of a generic TFET (identical to Figure 3.1) with germanium band gap. The MEDICI device simulation tool with band-to...Figure 3.1 in silicon is simulated (using MEDICI device simulator) with the local band-to-band tunnel model with average electric field using calibrated

  6. 'Al' concentration on spin-dependent resonant tunnelling in InAs/Ga

    Indian Academy of Sciences (India)

    The separation between spin-up and spin-down components, barrier transparency, polarization efficiency and tunnelling lifetime were calculated using the transfer matrix approach. The separation between spin-up and spin-down resonances and tunnelling lifetime were reportedfor the first time in the case of InAs/Ga 1 − y ...

  7. Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

    NARCIS (Netherlands)

    Naber, W.J.M.; Craciun, M.F.; Lemmens, J.H.J.; Arkenbout, A.H.; Palstra, T.T.M.; Morpurgo, A.F.; van der Wiel, Wilfred Gerard

    2010-01-01

    We report on single-crystal rubrene field-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al2O3 tunnel barrier. Magnetic and electronic characterization shows that the Al2O3 film not only protects the Co from undesired oxidation, but also

  8. Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

    NARCIS (Netherlands)

    Naber, W. J. M.; Craciun, M. F.; Lemmens, J. H. J.; Arkenbout, A. H.; Palstra, T. T. M.; Morpurgo, A. F.; van der Wiel, W. G.

    We report on single-crystal rubrene. eld-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al(2)O(3) tunnel barrier. Magnetic and electronic characterization shows that the Al(2)O(3) film not only protects the Co from undesired oxidation, but

  9. Epitaxial silicon semiconductor detectors, past developments, future prospects

    International Nuclear Information System (INIS)

    Gruhn, C.R.

    1976-01-01

    A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized

  10. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  11. Fabrication and characterization of fully depleted surface barrier detectors

    International Nuclear Information System (INIS)

    Ray, A.

    2010-01-01

    Fabrication of fully depleted surface barrier type thin detectors needs thin silicon wafer of 20 - 30 μm thickness and flatness of ± 1 μm. Process has been developed for thinning silicon wafers to achieve thickness up to 20 - 30 μm from thicker (0.5 - 0.8 mm) silicon samples. These samples were used to fabricate fully depleted surface barrier detectors using Au contacts on n-type silicon. The detectors were characterized by measuring forward and reverse I-V characteristics and alpha energy spectra of Am-Pu source. (author)

  12. Tunneling times in bianisotropic, dispersive and absorptive metamaterials

    Energy Technology Data Exchange (ETDEWEB)

    Radosavljević, Sanja [School of Electrical Engineering, University of Belgrade, Bulevar kralja Aleksandra 73, 11120 Belgrade (Serbia); Photonics Research Group, Ghent University – imec, Sint-Pietersnieuwstraat 41, 9000 Ghent (Belgium); Radovanović, Jelena, E-mail: radovanovic@etf.bg.ac.rs [School of Electrical Engineering, University of Belgrade, Bulevar kralja Aleksandra 73, 11120 Belgrade (Serbia); Milanović, Vitomir [School of Electrical Engineering, University of Belgrade, Bulevar kralja Aleksandra 73, 11120 Belgrade (Serbia)

    2016-12-09

    Tunneling times in complex bianisotropic materials have been examined in detail, with absorption and dispersion taken into account. Tunneling is characterized by the dwell and the phase tunneling time. In this paper, we have developed a theoretical model and derived the appropriate expressions for each of these quantities, as well as a relationship between them and the corresponding expression for the energy density. The model has been verified through numerical calculations based on experimental data. We have distinguished cases in which the phases of transmitted and incident wave match each other, and showed that for small angles of incidence, the time that the wave spends inside the barrier can be approximated as a linear function of the barrier width. The Hartman effect has been detected, although for very thick layers of metamaterial. - Highlights: • We analyze the tunneling times in bianisotropic, dispersive and absorptive metamaterials. • Conditions of zero phase tunneling time are identified for a range of frequencies of interest. • The Hartman effect has been detected for very thick barriers of metamaterial.

  13. Highly Charged Ion (HCI) Modified Tunnel Junctions

    International Nuclear Information System (INIS)

    Pomeroy, J. M.; Grube, H.

    2009-01-01

    The neutralization energy carried by highly charged ions (HCIs) provides an alternative method for localizing energy on a target's surface, producing features and modifying surfaces with fluences and kinetic energy damage that are negligible compared to singly ionized atoms. Since each HCI can deposit an enormous amount of energy into a small volume of the surface (e.g., Xe 44+ delivers 51 keV of neutralization energy per HCI), each individual HCI's interaction with the target can produce a nanoscale feature. Many studies of HCI-surface features have characterized some basic principles of this unique ion-surface interaction, but the activity reported here has been focused on studying ensembles of HCI features in ultra-thin insulating films by fabricating multi-layer tunnel junction devices. The ultra-thin insulating barriers allow current to flow by tunneling, providing a very sensitive means of detecting changes in the barrier due to highly charged ion irradiation and, conversely, HCI modification provides a method of finely tuning the transparency of the tunnel junctions that spans several orders of magnitude for devices produced from a single process recipe. Systematic variation of junction bias, temperature, magnetic field and other parameters provides determination of the transport mechanism, defect densities, and magnetic properties of these nano-features and this novel approach to device fabrication.

  14. Wind Tunnel Facility

    Data.gov (United States)

    Federal Laboratory Consortium — This ARDEC facility consists of subsonic, transonic, and supersonic wind tunnels to acquire aerodynamic data. Full-scale and sub-scale models of munitions are fitted...

  15. INCAS TRISONIC WIND TUNNEL

    Directory of Open Access Journals (Sweden)

    Florin MUNTEANU

    2009-09-01

    Full Text Available The 1.2 m x 1.2 m Trisonic Blowdown Wind Tunnel is the largest of the experimental facilities at the National Institute for Aerospace Research - I.N.C.A.S. "Elie Carafoli", Bucharest, Romania. The tunnel has been designed by the Canadian company DSMA (now AIOLOS and since its commissioning in 1978 has performed high speed aerodynamic tests for more than 120 projects of aircraft, missiles and other objects among which the twin jet fighter IAR-93, the jet trainer IAR-99, the MIG-21 Lancer, the Polish jet fighter YRYDA and others. In the last years the wind tunnel has been used mostly for experimental research in European projects such as UFAST. The high flow quality parameters and the wide range of testing capabilities ensure the competitivity of the tunnel at an international level.

  16. Water Tunnel Facility

    Data.gov (United States)

    Federal Laboratory Consortium — NETL’s High-Pressure Water Tunnel Facility in Pittsburgh, PA, re-creates the conditions found 3,000 meters beneath the ocean’s surface, allowing scientists to study...

  17. Tunneling magnetoresistance and electroresistance in Fe/PbTiO3/Fe multiferroic tunnel junctions

    International Nuclear Information System (INIS)

    Dai, Jian-Qing

    2016-01-01

    We perform first-principles electronic structure and spin-dependent transport calculations for a Fe/PbTiO 3 /Fe multiferroic tunnel junction with asymmetric TiO 2 - and PbO-terminated interfaces. We demonstrate that the interfacial electronic reconstruction driven by the in situ screening of ferroelectric polarization, in conjunction with the intricate complex band structure of barrier, play a decisive role in controlling the spin-dependent tunneling. Reversal of ferroelectric polarization results in a transition from insulating to half-metal-like conducting state for the interfacial Pb 6p z orbitals, which acts as an atomic-scale spin-valve by releasing the tunneling current in antiparallel magnetization configuration as the ferroelectric polarization pointing to the PbO-terminated interface. This effect produces large change in tunneling conductance. Our results open an attractive avenue in designing multiferroic tunnel junctions with excellent performance by exploiting the interfacial electronic reconstruction originated from the in situ screening of ferroelectric polarization.

  18. Building barriers.

    Science.gov (United States)

    Turksen, Kursad

    2017-10-02

    Formation of tissue barriers starts in early development where it is critical for normal cell fate selection, differentiation and organogenesis. Barrier maintenance is critical to the ongoing function of organs during adulthood and aging. Dysfunctional tissue barrier formation and function at any stage of the organismal life cycle underlies many disease states.

  19. The Beginner's Guide to Wind Tunnels with TunnelSim and TunnelSys

    Science.gov (United States)

    Benson, Thomas J.; Galica, Carol A.; Vila, Anthony J.

    2010-01-01

    The Beginner's Guide to Wind Tunnels is a Web-based, on-line textbook that explains and demonstrates the history, physics, and mathematics involved with wind tunnels and wind tunnel testing. The Web site contains several interactive computer programs to demonstrate scientific principles. TunnelSim is an interactive, educational computer program that demonstrates basic wind tunnel design and operation. TunnelSim is a Java (Sun Microsystems Inc.) applet that solves the continuity and Bernoulli equations to determine the velocity and pressure throughout a tunnel design. TunnelSys is a group of Java applications that mimic wind tunnel testing techniques. Using TunnelSys, a team of students designs, tests, and post-processes the data for a virtual, low speed, and aircraft wing.

  20. Spin-polarized tunneling through a ferromagnetic insulator

    NARCIS (Netherlands)

    Kok, M.; Kok, M.; Beukers, J.N.; Brinkman, Alexander

    2009-01-01

    The polarization of the tunnel conductance of spin-selective ferromagnetic insulators is modeled, providing a generalized concept of polarization including both the effects of electrode and barrier polarization. The polarization model is extended to take additional non-spin-polarizing insulating

  1. Electronic and chemical structure of metal-silicon interfaces

    Science.gov (United States)

    Grunthaner, P. J.; Grunthaner, F. J.

    1984-01-01

    This paper reviews our current understanding of the near-noble metal silicides and the interfaces formed with Si(100). Using X-ray photoemission spectroscopy, we compare the chemical composition and electronic structure of the room temperature metal-silicon and reacted silicide-silicon interfaces. The relationship between the interfacial chemistry and the Schottky barrier heights for this class of metals on silicon is explored.

  2. Effect of gamma-ray irradiation on the surface states of MOS tunnel junctions

    Science.gov (United States)

    Ma, T. P.; Barker, R. C.

    1974-01-01

    Gamma-ray irradiation with doses up to 8 megarad produces no significant change on either the C(V) or the G(V) characteristics of MOS tunnel junctions with intermediate oxide thicknesses (40-60 A), whereas the expected flat-band shift toward negative electrode voltages occurs in control thick oxide capacitors. A simple tunneling model would explain the results if the radiation-generated hole traps are assumed to lie below the valence band of the silicon. The experiments also suggest that the observed radiation-generated interface states in conventional MOS devices are not due to the radiation damage of the silicon surface.

  3. Delay time and tunneling transient phenomena

    International Nuclear Information System (INIS)

    Garcia-Calderon, Gaston; Villavicencio, Jorge

    2002-01-01

    Analytic solutions to the time-dependent Schroedinger equation for cutoff wave initial conditions are used to investigate the time evolution of the transmitted probability density for tunneling. For a broad range of values of the potential barrier opacity α, we find that the probability density exhibits two evolving structures. One refers to the propagation of a forerunner related to a time domain resonance [Phys. Rev. A 64, 0121907 (2001)], while the other consists of a semiclassical propagating wave front. We find a regime where the forerunners are absent, corresponding to positive time delays, and show that this regime is characterized by opacities α c . The critical opacity α c is derived from the analytical expression for the delay time, which reflects a link between transient effects in tunneling and the delay time

  4. Small Numbers From Tunneling Between Brane Throats

    Energy Technology Data Exchange (ETDEWEB)

    Kachru, Shamit

    2001-07-25

    Generic classes of string compactifications include ''brane throats'' emanating from the compact dimensions and separated by effective potential barriers raised by the background gravitational fields. The interaction of observers inside different throats occurs via tunneling and is consequently weak. This provides a new mechanism for generating small numbers in Nature. We apply it to the hierarchy problem, where supersymmetry breaking near the unification scale causes TeV sparticle masses inside the standard model throat. We also design naturally long-lived cold dark matter which decays within a Hubble time to the approximate conformal matter of a long throat. This may soften structure formation at galactic scales and raises the possibility that much of the dark matter of the universe is conformal matter. Finally, the tunneling rate shows that the coupling between throats, mediated by bulk modes, is stronger than a naive application of holography suggests.

  5. Tunneling Planar Hall Effect in Topological Insulators: Spin Valves and Amplifiers.

    Science.gov (United States)

    Scharf, Benedikt; Matos-Abiague, Alex; Han, Jong E; Hankiewicz, Ewelina M; Žutić, Igor

    2016-10-14

    We investigate tunneling across a single ferromagnetic barrier on the surface of a three-dimensional topological insulator. In the presence of a magnetization component along the bias direction, a tunneling planar Hall conductance (TPHC), transverse to the applied bias, develops. Electrostatic control of the barrier enables a giant Hall angle, with the TPHC exceeding the longitudinal tunneling conductance. By changing the in-plane magnetization direction, it is possible to change the sign of both the longitudinal and transverse differential conductance without opening a gap in the topological surface state. The transport in a topological-insulator-ferromagnet junction can, thus, be drastically altered from a simple spin valve to an amplifier.

  6. Direct space-time observation of pulse tunneling in an electromagnetic band gap

    International Nuclear Information System (INIS)

    Doiron, Serge; Hache, Alain; Winful, Herbert G.

    2007-01-01

    We present space-time-resolved measurements of electromagnetic pulses tunneling through a coaxial electromagnetic band gap structure. The results show that during the tunneling process the field distribution inside the barrier is an exponentially decaying standing wave whose amplitude increases and decreases as it slowly follows the temporal evolution of the input pulse. At no time is a pulse maximum found inside the barrier, and hence the transmitted peak is not the incident peak that has propagated to the exit. The results support the quasistatic interpretation of tunneling dynamics and confirm that the group delay is not the traversal time of the input pulse peak

  7. Attoclock reveals natural coordinates of the laser-induced tunnelling current flow in atoms

    DEFF Research Database (Denmark)

    Pfeiffer, Adrian N.; Cirelli, Claudio; Smolarski, Mathias

    2012-01-01

    In the research area of strong-laser-field interactions and attosecond science1, tunnelling of an electron through the barrier formed by the electric field of the laser and the atomic potential is typically assumed to be the initial key process that triggers subsequent dynamics1, 2, 3. Here we use...... the attoclock technique4 to obtain experimental information about the electron tunnelling geometry (the natural coordinates of the tunnelling current flow) and exit point. We confirm vanishing tunnelling delay time, show the importance of the inclusion of Stark shifts5, 6 and report on multi-electron effects...

  8. Black silicon maskless templates for carbon nanotube forests

    DEFF Research Database (Denmark)

    Wierzbicki, Rafal; Schmidt, Michael Stenbæk; Boisen, Anja

    2013-01-01

    We present here a proof of concept for a novel fabrication method of vertically aligned carbon nanotube forests, utilizing black silicon nanograss (a forest of silicon nanometer-sized spikes created with reactive ion etching) coated with titanium tungsten diffusion barrier as a template. The method...

  9. Synthesis and characterization of nano silicon and titanium nitride ...

    Indian Academy of Sciences (India)

    Silicon nanoparticles attract a great deal of attention as they are used in logic gates, memory devices, light- emitting devices, sensors, bio-imaging, energy storage and photonic applications.1 Titanium nitride (TiN) is extensively used as an anti-wear coating,2 bio replace- ments,3 contact/barrier layer to silicon and as a gate.

  10. Tip-induced local strain on Mo S2/graphite detected by inelastic electron tunneling spectroscopy

    Science.gov (United States)

    Ko, Wonhee; Hus, Saban M.; Li, Xufan; Berlijn, Tom; Nguyen, Giang D.; Xiao, Kai; Li, An-Ping

    2018-03-01

    We report the detection of tip-induced local strain applied to the monolayer Mo S2 grown on a graphite substrate by scanning tunneling microscope. Monolayer Mo S2 behaves as both mechanical and tunneling barriers that prevent the tip from contacting the graphite while maintaining the tunneling current. Inelastic tunneling electron spectroscopy (IETS) is utilized to probe the phonon modes in graphite. As the tip pushes the sample, IETS reveals a continuous phonon softening in graphite, corroborated by a downward shift of the phonon energy as calculated by density-functional theory. Our results demonstrate a way to apply local mechanical strain and simultaneously detect the induced change in phonon modes by unitizing IETS with two-dimensional materials as a tunneling barrier.

  11. Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

    KAUST Repository

    Jin Hu, Wei

    2016-02-29

    Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.

  12. Ultrafast nonlinear response of silicon carbide to intense THz fields

    DEFF Research Database (Denmark)

    Tarekegne, Abebe Tilahun; Iwaszczuk, Krzysztof; Kaltenecker, Korbinian J.

    2017-01-01

    We demonstrate ultrafast nonlinear absorption induced by strong, single-cycle THz fields in bulk, lightly doped 4H silicon carbide. A combination of Zener tunneling and intraband transitions makes the effect as at least as fast as the excitation pulse. The sub-picosecond recovery time makes...

  13. Low Temperature Characterization of PMOS-type Gate-all-around Silicon nanowire FETs as single-hole-transistors

    Science.gov (United States)

    Hong, B. H.; Hwang, S. W.; Lee, Y. Y.; Son, M. H.; Ahn, D.; Cho, K. H.; Yeo, K. H.; Kim, D.-W.; Jin, G. Y.; Park, D.

    2011-12-01

    We report the single hole tunneling characteristics observed from a PMOS-type gate-all-around silicon nanowire field-effect-transistor with the radius 5 nm and the length 44 nm. The total capacitance of the quantum dot obtained from the measured Coulomb oscillations and Coulomb diamonds matches with the ideal capacitance of the silicon cylinder. It suggests that the observed single hole tunneling is originated from the fabricated structure.

  14. Single Electron Tunneling

    International Nuclear Information System (INIS)

    Ruggiero, Steven T.

    2005-01-01

    Financial support for this project has led to advances in the science of single-electron phenomena. Our group reported the first observation of the so-called ''Coulomb Staircase'', which was produced by tunneling into ultra-small metal particles. This work showed well-defined tunneling voltage steps of width e/C and height e/RC, demonstrating tunneling quantized on the single-electron level. This work was published in a now well-cited Physical Review Letter. Single-electron physics is now a major sub-field of condensed-matter physics, and fundamental work in the area continues to be conducted by tunneling in ultra-small metal particles. In addition, there are now single-electron transistors that add a controlling gate to modulate the charge on ultra-small photolithographically defined capacitive elements. Single-electron transistors are now at the heart of at least one experimental quantum-computer element, and single-electron transistor pumps may soon be used to define fundamental quantities such as the farad (capacitance) and the ampere (current). Novel computer technology based on single-electron quantum dots is also being developed. In related work, our group played the leading role in the explanation of experimental results observed during the initial phases of tunneling experiments with the high-temperature superconductors. When so-called ''multiple-gap'' tunneling was reported, the phenomenon was correctly identified by our group as single-electron tunneling in small grains in the material. The main focus throughout this project has been to explore single electron phenomena both in traditional tunneling formats of the type metal/insulator/particles/insulator/metal and using scanning tunneling microscopy to probe few-particle systems. This has been done under varying conditions of temperature, applied magnetic field, and with different materials systems. These have included metals, semi-metals, and superconductors. Amongst a number of results, we have

  15. A thin-film silicon/silicon hetero-junction hybrid solar cell for photoelectrochemical water-reduction applications

    NARCIS (Netherlands)

    Vasudevan, R.A.; Thanawala, Z; Han, L.; Buijs, Thom; Tan, H.; Deligiannis, D.; Perez Rodriguez, P.; Digdaya, I.A.; Smith, W.A.; Zeman, M.; Smets, A.H.M.

    2016-01-01

    A hybrid tandem solar cell consisting of a thin-film, nanocrystalline silicon top junction and a siliconheterojunction bottom junction is proposed as a supporting solar cell for photoelectrochemical applications.Tunneling recombination junction engineering is shown to be an important consideration

  16. Salecker-Wigner-Peres clock and average tunneling times

    Energy Technology Data Exchange (ETDEWEB)

    Lunardi, Jose T., E-mail: jttlunardi@uepg.b [Departamento de Matematica e Estatistica, Universidade Estadual de Ponta Grossa, Av. General Carlos Cavalcanti, 4748. Cep 84030-000, Ponta Grossa, PR (Brazil); Manzoni, Luiz A., E-mail: manzoni@cord.ed [Department of Physics, Concordia College, 901 8th St. S., Moorhead, MN 56562 (United States); Nystrom, Andrew T., E-mail: atnystro@cord.ed [Department of Physics, Concordia College, 901 8th St. S., Moorhead, MN 56562 (United States)

    2011-01-17

    The quantum clock of Salecker-Wigner-Peres is used, by performing a post-selection of the final state, to obtain average transmission and reflection times associated to the scattering of localized wave packets by static potentials in one dimension. The behavior of these average times is studied for a Gaussian wave packet, centered around a tunneling wave number, incident on a rectangular barrier and, in particular, on a double delta barrier potential. The regime of opaque barriers is investigated and the results show that the average transmission time does not saturate, showing no evidence of the Hartman effect (or its generalized version).

  17. Interaction between groundwater and TBM (Tunnel Boring Machine) excavated tunnels

    OpenAIRE

    Font Capó, Jordi

    2012-01-01

    A number of problems, e.g. sudden inflows are encountered during tunneling under the piezometric level, especially when the excavation crosses high transmissivity areas. These inflows may drag materials when the tunnel crosses low competent layers, resulting in subsidence, chimney formation and collapses. Moreover, inflows can lead to a decrease in head level because of aquifer drainage. Tunnels can be drilled by a tunnel boring machine (TBM) to minimize inflows and groundwater impacts, restr...

  18. Polymer-mediated tunneling transport between carbon nanotubes in nanocomposites.

    Science.gov (United States)

    Derosa, Pedro A; Michalak, Tyler

    2014-05-01

    Electron transport in nanocomposites has attracted a good deal of attention for some time now; furthermore, the ability to control its characteristics is a necessary step in the design of multifunctional materials. When conductive nanostructures (for example carbon nanotubes) are inserted in a non-conductive matrix, electron transport below the percolation threshold is dominated by tunneling and thus the conductive characteristics of the composite depends heavily on the characteristics of the tunneling currents between nanoinserts. A parameter-free approach to study tunneling transport between carbon nanotubes across a polymer matrix is presented. The calculation is done with a combination of Density Functional Theory and Green functions (an approach heavily used in molecular electronics) which is shown here to be effective in this non-resonant transport condition. The results show that the method can effectively capture the effect of a dielectric layer in tunneling transport. The current is found to exponentially decrease with the size of the gap for both vacuum and polymer, and that the polymer layer lowers the tunneling barrier enhancing tunneling conduction. For a polyacrylonitrile matrix, a four-fold decrease in the tunneling constant, compared to tunneling in vacuum, is observed, a result that is consistent with available information. The method is very versatile as any DFT functional (or any other quantum mechanics method) can be used and thus the most accurate method for each particular system can be chosen. Furthermore as more methods become available, the calculations can be revised and improved. This approach can be used to design functional materials for fine-tunning the tunneling transport, for instance, the effect of modifying the nanoinsert-matrix interface (for example, by adding functional groups to carbon nanotubes) can be captured and the comparative performance of each interface predicted by simulation.

  19. Seepage into PEP tunnel

    International Nuclear Information System (INIS)

    Weidner, H.

    1990-01-01

    The current rate of seepage into the PEP tunnel in the vicinity of IR-10 is very low compared to previous years. Adequate means of handling this low flow are in place. It is not clear whether the reduction in the flow is temporary, perhaps due to three consecutive dry years, or permanent due to drainage of a perched water table. During PEP construction a large amount of effort was expended in attempts to seal the tunnel, with no immediate effect. The efforts to ''manage'' the water flow are deemed to be successful. By covering equipment to protect it from dripping water and channeling seepage into the drainage gutters, the seepage has been reduced to a tolerable nuisance. There is no sure, safe procedure for sealing a leaky shotcreted tunnel

  20. Acoustic Black Holes from Supercurrent Tunneling

    Science.gov (United States)

    Ge, Xian-Hui; Wu, Shao-Feng; Wang, Yunping; Yang, Guo-Hong; Shen, You-Gen

    2012-04-01

    We present a version of acoustic black holes by using the principle of the Josephson effect. We find that in the case where two superconductors A and B are separated by an insulating barrier, an acoustic black hole may be created in the middle region between the two superconductors. We discuss in detail how to describe an acoustic black hole in the Josephson junction and write the metric in the language of the superconducting electronics. Our final results infer that for big enough tunneling current and thickness of the junction, experimental verification of the Hawking temperature could be possible.

  1. Thermoelectric characteristics of Pt-silicide/silicon multi-layer structured p-type silicon

    International Nuclear Information System (INIS)

    Choi, Wonchul; Jun, Dongseok; Kim, Soojung; Shin, Mincheol; Jang, Moongyu

    2015-01-01

    Electric and thermoelectric properties of silicide/silicon multi-layer structured devices were investigated with the variation of silicide/silicon heterojunction numbers from 3 to 12 layers. For the fabrication of silicide/silicon multi-layered structure, platinum and silicon layers are repeatedly sputtered on the (100) silicon bulk substrate and rapid thermal annealing is carried out for the silicidation. The manufactured devices show ohmic current–voltage (I–V) characteristics. The Seebeck coefficient of bulk Si is evaluated as 195.8 ± 15.3 μV/K at 300 K, whereas the 12 layered silicide/silicon multi-layer structured device is evaluated as 201.8 ± 9.1 μV/K. As the temperature increases to 400 K, the Seebeck coefficient increases to 237.2 ± 4.7 μV/K and 277.0 ± 1.1 μV/K for bulk and 12 layered devices, respectively. The increase of Seebeck coefficient in multi-layered structure is mainly attributed to the electron filtering effect due to the Schottky barrier at Pt-silicide/silicon interface. At 400 K, the thermal conductivity is reduced by about half of magnitude compared to bulk in multi-layered device which shows the efficient suppression of phonon propagation by using Pt-silicide/silicon hetero-junctions. - Highlights: • Silicide/silicon multi-layer structured is proposed for thermoelectric devices. • Electric and thermoelectric properties with the number of layer are investigated. • An increase of Seebeck coefficient is mainly attributed the Schottky barrier. • Phonon propagation is suppressed with the existence of Schottky barrier. • Thermal conductivity is reduced due to the suppression of phonon propagation

  2. Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells

    Science.gov (United States)

    Jehl, Zacharie; Suchet, Daniel; Julian, Anatole; Bernard, Cyril; Miyashita, Naoya; Gibelli, Francois; Okada, Yoshitaka; Guillemolles, Jean-Francois

    2017-02-01

    Double resonant tunneling barriers are considered for an application as energy selective contacts in hot carrier solar cells. Experimental symmetric and asymmetric double resonant tunneling barriers are realized by molecular beam epitaxy and characterized by temperature dependent current-voltage measurements. The negative differential resistance signal is enhanced for asymmetric heterostructures, and remains unchanged between low- and room-temperatures. Within Tsu-Esaki description of the tunnel current, this observation can be explained by the voltage dependence of the tunnel transmission amplitude, which presents a resonance under finite bias for asymmetric structures. This effect is notably discussed with respect to series resistance. Different parameters related to the electronic transmission of the structure and the influence of these parameters on the current voltage characteristic are investigated, bringing insights on critical processes to optimize in double resonant tunneling barriers applied to hot carrier solar cells.

  3. LEP tunnel monorail

    CERN Multimedia

    1985-01-01

    A monorail from CERN's Large Electron Positron collider (LEP, for short). It ran around the 27km tunnel, transporting equipment and personnel. With its 27-kilometre circumference, LEP was the largest electron-positron accelerator ever built and ran from 1989 to 2000. During 11 years of research, LEP's experiments provided a detailed study of the electroweak interaction. Measurements performed at LEP also proved that there are three – and only three – generations of particles of matter. LEP was closed down on 2 November 2000 to make way for the construction of the Large Hadron Collider in the same tunnel.

  4. Excavating a transfer tunnel

    CERN Multimedia

    Laurent Guiraud

    2000-01-01

    The transfer tunnel being dug here will take the 450 GeV beam from the SPS and inject it into the LHC where the beam energies will be increased to 7 TeV. In order to transfer this beam from the SPS to the LHC, two transfer tunnels are used to circulate the beams in opposite directions. When excavated, the accelerator components, including magnets, beam pipes and cryogenics will be installed and connected to both the SPS and LHC ready for operation to begin in 2008.

  5. Electron tunneling through alkanedithiol self-assembled monolayers in large-area molecular junctions

    NARCIS (Netherlands)

    Akkerman, Hylke B.; Naber, Ronald C. G.; Jongbloed, Bert; van Hal, Paul A.; Blom, Paul W. M.; de Leeuw, Dago M.; de Boer, Bert

    2007-01-01

    The electrical transport through self-assembled monolayers of alkanedithiols was studied in large-area molecular junctions and described by the Simmons model [Simmons JIG (1963) J Appi Phys 34:1793-1803 and 2581-2590] for tunneling through a practical barrier, i.e., a rectangular barrier with the

  6. Breaking through the tranfer tunnel

    CERN Document Server

    Laurent Guiraud

    2001-01-01

    This image shows the tunnel boring machine breaking through the transfer tunnel into the LHC tunnel. Proton beams will be transferred from the SPS pre-accelerator to the LHC at 450 GeV through two specially constructed transfer tunnels. From left to right: LHC Project Director, Lyn Evans; CERN Director-General (at the time), Luciano Maiani, and Director for Accelerators, Kurt Hubner.

  7. Gap anisotropy and tunneling currents. [MPS3

    DEFF Research Database (Denmark)

    Lazarides, N.; Sørensen, Mads Peter

    1996-01-01

    The tunneling Hamiltonian formalism is applied to calculate the tunnelingcurrents through a small superconducting tunnel junction. The formalism isextended to nonconstant tunneling matrix elements. The electrodes of thejunction are assumed to......The tunneling Hamiltonian formalism is applied to calculate the tunnelingcurrents through a small superconducting tunnel junction. The formalism isextended to nonconstant tunneling matrix elements. The electrodes of thejunction are assumed to...

  8. Unstable Semiclassical Trajectories in Tunneling

    CERN Document Server

    Levkov, D G; Sibiryakov, S M

    2007-01-01

    Some tunneling phenomena are described, in the semiclassical approximation, by unstable complex trajectories. We develop a systematic procedure to stabilize the trajectories and to calculate the tunneling probability, including both the suppression exponent and prefactor. We find that the instability of tunneling solutions modifies the power-law dependence of the prefactor on h as compared to the case of stable solutions.

  9. Experimental evidence of surface conduction in AlSb-InAs tunneling diodes

    OpenAIRE

    Nomoto, K.; Taira, K.; Suzuki, T.; Hase, I.

    1999-01-01

    The peak-to-valley ratio of AlSb–InAs resonant tunneling diodes decreases as the diameter of the diode decreases due to the surface current. To clarify the origin of the surface current, we studied AlSb–InAs single-barrier diodes with various diameters and barrier thicknesses at various temperatures. We conclude from experimentally obtained results that bulk current is caused by tunneling through an AlSb barrier influenced by the band structure and surface current is caused by an electron emi...

  10. Surface stability test plan for protective barriers

    International Nuclear Information System (INIS)

    Ligotke, M.W.

    1989-01-01

    Natural-material protective barriers for long-term isolation of buried waste have been identified as integral components of a plan to isolate a number of Hanford defense waste sites. Standards currently being developed for internal and external barrier performance will mandate a barrier surface layer that is resistant to the eolian erosion processes of wind erosion (deflation) and windborne particle deposition (formation of sand dunes). Thus, experiments are needed to measure rates of eolian erosion processes impacting those surfaces under different surface and climatological conditions. Data from these studies will provide information for use in the evaluation of selected surface layers as a means of providing stable cover over waste sites throughout the design life span of protective barriers. The multi-year test plan described in this plan is directed at understanding processes of wind erosion and windborne particle deposition, providing measurements of erosion rates for models, and suggesting construction materials and methods for reducing the effect of long-term eolian erosion on the barrier. Specifically, this plan describes possible methods to measure rates of eolian erosion, including field and laboratory procedure. Advantages and disadvantages of laboratory (wind tunnel) tests are discussed, and continued wind tunnel tests are recommended for wind erosion studies. A comparison between field and wind tunnel erosive forces is discussed. Plans for testing surfaces are described. Guidance is also presented for studying the processes controlling sand dune and blowout formation. 24 refs., 7 figs., 3 tabs

  11. Planar Josephson tunnel junctions in a transverse magnetic field

    DEFF Research Database (Denmark)

    Monacoa, R.; Aarøe, Morten; Mygind, Jesper

    2007-01-01

    Traditionally, since the discovery of the Josephson effect in 1962, the magnetic diffraction pattern of planar Josephson tunnel junctions has been recorded with the field applied in the plane of the junction. Here we discuss the static junction properties in a transverse magnetic field where...... demagnetization effects imposed by the tunnel barrier and electrodes geometry are important. Measurements of the junction critical current versus magnetic field in planar Nb-based high-quality junctions with different geometry, size, and critical current density show that it is advantageous to use a transverse...... magnetic field rather than an in-plane field. The conditions under which this occurs are discussed....

  12. Spin transfer torque with spin diffusion in magnetic tunnel junctions

    KAUST Repository

    Manchon, Aurelien

    2012-08-09

    Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque, as well as a nonconventional thickness dependence of both spin torque components.

  13. Engineering ferroelectric tunnel junctions through potential profile shaping

    Directory of Open Access Journals (Sweden)

    S. Boyn

    2015-06-01

    Full Text Available We explore the influence of the top electrode materials (W, Co, Ni, Ir on the electronic band profile in ferroelectric tunnel junctions based on super-tetragonal BiFeO3. Large variations of the transport properties are observed at room temperature. In particular, the analysis of current vs. voltage curves by a direct tunneling model indicates that the metal/ferroelectric interfacial barrier height increases with the top-electrode work function. While larger metal work functions result in larger OFF/ON ratios, they also produce a large internal electric field which results in large and potentially destructive switching voltages.

  14. Current Tunnelling in MOS Devices with Al2O3/SiO2 Gate Dielectric

    Directory of Open Access Journals (Sweden)

    A. Bouazra

    2008-01-01

    Full Text Available With the continued scaling of the SiO2 thickness below 2 nm in CMOS devices, a large direct-tunnelling current flow between the gate electrode and silicon substrate is greatly impacting device performance. Therefore, higher dielectric constant materials are desirable for reducing the gate leakage while maintaining transistor performance for very thin dielectric layers. Despite its not very high dielectric constant (∼10, Al2O3 has emerged as one of the most promising high-k candidates in terms of its chemical and thermal stability as its high-barrier offset. In this paper, a theoretical study of the physical and electrical properties of Al2O3 gate dielectric is reported including I(V and C(V characteristics. By using a stack of Al2O3/SiO2 with an appropriate equivalent oxide thickness of gate dielectric MOS, the gate leakage exhibits an important decrease. The effect of carrier trap parameters (depth and width at the Al2O3/SiO2 interface is also discussed.

  15. Effects of weak and strong localization in tunnel characteristics of contacts on HTSC base

    International Nuclear Information System (INIS)

    Revenko, Yu.V.; Svistunov, V.M.; Grigut', O.V.; Belogolovskij, M.A.; Khachaturov, A.I.

    1992-01-01

    It is found that a phenomena governed by the electronic processes in the disordered surface normal layer of material are observed in the tunnel contatcs bases on metal oxide superconductors of 1-2-3 group. Measured characteristics σ(U)=dI/dU ore determined both by contact's barrier properties and conductivity in the disordered region of metal oxides in the vicinity of a barrier. As regards high-temperature contacts σ(U) value at high temperatures us determined by the Schottky barrier and at low temperatures - by activation processes of charge transfer over strongly localized states in near-the-barrier region of the contact. Crossing over towards logarithmic dependence in the tunnel conductuvity σ(U) of low-Ohmic transitions are attributed to the occurrence of 2D state density conditions in the tunnel surface layers of metal oxides

  16. Tunnelling with wormhole creation

    Energy Technology Data Exchange (ETDEWEB)

    Ansoldi, S. [National Institute of Nuclear Physics (INFN) (Italy); Tanaka, T., E-mail: tanaka@yukawa.kyoto-u.ac.jp [Kyoto University, Department of Physics (Japan)

    2015-03-15

    The description of quantum tunnelling in the presence of gravity shows subtleties in some cases. We discuss wormhole production in the context of the spherically symmetric thin-shell approximation. By presenting a fully consistent treatment based on canonical quantization, we solve a controversy present in the literature.

  17. Tunnelling with wormhole creation

    OpenAIRE

    Ansoldi, Stefano; Tanaka, Takahiro

    2014-01-01

    The description of quantum tunnelling in the presence of gravity shows subtleties in some cases. Here we discuss wormhole production in the context of the spherically symmetric thin-shell approximation. By presenting a fully consistent treatment based on canonical quantization, we solve a controversy present in literature.

  18. Tunnelling Effects in Chemistry

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 19; Issue 2. Tunnelling Effects in Chemistry: Molecules in the Strange Quantum World. Sharmistha Karmakar Deepthi Jose Ayan Datta. General Article Volume 19 Issue 2 February 2014 pp 160-174 ...

  19. INCAS SUBSONIC WIND TUNNEL

    Directory of Open Access Journals (Sweden)

    Corneliu STOICA

    2009-09-01

    Full Text Available The INCAS Subsonic Wind Tunnel is a closed circuit, continuous, atmospheric pressure facility with a maximum speed of 110 m/s. The test section is octagonal ,of 2.5 m wide, 2.0 m high and 4 m long. The tunnel is powered by a 1200 kW, air cooled variable speed DC motor which drives a 12 blade, 3.5 m diameter fan and is equipped with a six component pyramidal type external mechanical balance with a 700 Kgf maximum lift capacity.The angle of attack range is between -45º and +45º while the yaw angle range is between -140º and +216º .The data acquisition system has been modified recently to allow the recording of all test data on a PC - type computer using LABVIEW and a PXI – type chassis containing specialized data acquisition modules.The tunnel is equipped with a variable frequency electrical supply system for powered models and a 10 bar compressed air supply for pneumatic flow control applications.In the recent years the subsonic wind tunnel has been intensively used for tests within several European projects (AVERT, CESAR and others.

  20. Tunnelling Effects in Chemistry

    Indian Academy of Sciences (India)

    IAS Admin

    GENERAL ⎜ ARTICLE. Tunnelling Effects in Chemistry. Molecules in the Strange Quantum World. Sharmistha Karmakar, Deepthi Jose and Ayan Datta. (left) Sharmistha Karmakar is doing her PhD in the group of. Ayan Datta, IACS,. Kolkata. Her research interests are modelling molecules with strong optical absorbtion and.

  1. The Channel Tunnel

    Science.gov (United States)

    2006-01-01

    The Channel Tunnel is a 50.5 km-long rail tunnel beneath the English Channel at the Straits of Dover. It connects Dover, Kent in England with Calais, northern France. The undersea section of the tunnel is unsurpassed in length in the world. A proposal for a Channel tunnel was first put forward by a French engineer in 1802. In 1881, a first attempt was made at boring a tunnel from the English side; the work was halted after 800 m. Again in 1922, English workers started boring a tunnel, and advanced 120 m before it too was halted for political reasons. The most recent attempt was begun in 1987, and the tunnel was officially opened in 1994. At completion it was estimated that the project cost around $18 billion. It has been operating at a significant loss since its opening, despite trips by over 7 million passengers per year on the Eurostar train, and over 3 million vehicles per year. With its 14 spectral bands from the visible to the thermal infrared wavelength region, and its high spatial resolution of 15 to 90 meters (about 50 to 300 feet), ASTER images Earth to map and monitor the changing surface of our planet. ASTER is one of five Earth-observing instruments launched December 18, 1999, on NASA's Terra satellite. The instrument was built by Japan's Ministry of Economy, Trade and Industry. A joint U.S./Japan science team is responsible for validation and calibration of the instrument and the data products. The broad spectral coverage and high spectral resolution of ASTER provides scientists in numerous disciplines with critical information for surface mapping, and monitoring of dynamic conditions and temporal change. Example applications are: monitoring glacial advances and retreats; monitoring potentially active volcanoes; identifying crop stress; determining cloud morphology and physical properties; wetlands evaluation; thermal pollution monitoring; coral reef degradation; surface temperature mapping of soils and geology; and measuring surface heat balance. The

  2. Coated silicon comprising material for protection against environmental corrosion

    Science.gov (United States)

    Hazel, Brian Thomas (Inventor)

    2009-01-01

    In accordance with an embodiment of the invention, an article is disclosed. The article comprises a gas turbine engine component substrate comprising a silicon material; and an environmental barrier coating overlying the substrate, wherein the environmental barrier coating comprises cerium oxide, and the cerium oxide reduces formation of silicate glass on the substrate upon exposure to corrodant sulfates.

  3. Nanowire Tunnel Field Effect Transistors: Prospects and Pitfalls

    Science.gov (United States)

    Sylvia, Somaia Sarwat

    The tunnel field effect transistor (TFET) has the potential to operate at lower voltages and lower power than the field effect transistor (FET). The TFET can circumvent the fundamental thermal limit of the inverse subthreshold slope (S) by exploiting interband tunneling of non-equilibrium "cold" carriers. The conduction mechanism in the TFET is governed by band-to-band tunneling which limits the drive current. TFETs built with III-V materials like InAs and InSb can produce enough tunneling current because of their small direct bandgap. Our simulation results show that although they require highly degenerate source doping to support the high electric fields in the tunnel region, the devices achieve minimum inverse subthreshold slopes of 30 mV/dec. In subthreshold, these devices experience both regimes of voltage-controlled tunneling and cold-carrier injection. Numerical results based on a discretized 8-band k.p model are compared to analytical WKB theory. For both regular FETs and TFETs, direct channel tunneling dominates the leakage current when the physical gate length is reduced to 5 nm. Therefore, a survey of materials is performed to determine their ability to suppress the direct tunnel current through a 5 nm barrier. The tunneling effective mass gives the best indication of the relative size of the tunnel currents. Si gives the lowest overall tunnel current for both the conduction and valence band and, therefore, it is the optimum choice for suppressing tunnel current at the 5 nm scale. Our numerical simulation shows that the finite number, random placement, and discrete nature of the dopants in the source of an InAs nanowire (NW) TFET affect both the mean value and the variance of the drive current and the inverse subthreshold slope. The discrete doping model gives an average drive current and an inverse subthreshold slope that are less than those predicted from the homogeneous doping model. The doping density required to achieve a target drive current is

  4. Tunneling decay in a magnetic field

    International Nuclear Information System (INIS)

    Sharpee, T.; Dykman, M.I.; Platzman, P.M.

    2002-01-01

    We provide a semiclassical theory of tunneling decay in a magnetic field and a three-dimensional potential of a general form. Because of broken time-reversal symmetry, the standard WKB technique has to be modified. The decay rate is found from the analysis of the Hamilton trajectories of the particle in complex phase space and time. In a magnetic field, the tunneling particle comes from beneath the barrier with a nonzero velocity. The exit location in the classically allowed region is obtained by matching the decaying and outgoing branches of the WKB wave function on a caustic of the set of the complex trajectories. The slope of the logarithm of the wave function sharply changes on the anti-Stokes surface where there occurs switching between different WKB branches. For potential wells that are parabolic near the minimum, we also provide a bounce-type formulation. The theory is applied to the models that are relevant to tunneling from correlated two-dimensional electron systems in a magnetic field parallel to the electron layer

  5. Macroscopic quantum tunneling in Mn12-acetat

    International Nuclear Information System (INIS)

    Beiter, J.; Reissner, M.; Hilscher, G.; Steiner, W.; Pajic, D.; Zadro, K.; Bartel, M.; Linert, W.

    2004-01-01

    Molecules provide the exciting opportunity to study magnetism on the passage from atomic to macroscopic level. One of the most interesting effects in such mesoscopic systems is the appearance of quantum tunnelling of magnetization (MQT) at low temperatures. In the last decade molecular chemistry has had a large impact in this field by providing new single molecule magnets. They consist of small clusters exhibiting superparamagnetic behavior, similar to that of conventional nanomagnetic particles. The advantage of these new materials is that they form macroscopic samples consisting of regularly arranged small identical high-spin clusters which are widely separated by organic molecules. The lack of distributions in size and shape of the magnetic clusters and the very weak intercluster interaction lead in principle to only one barrier for the spin reversal. We present detailed magnetic investigations on a Mn 12 -ac single crystal. In this compound the tetragonal ordered clusters consist of a central tetrahedron of four Mn 4+ (S = 3/2) atoms surrounded by eight Mn 3+ (S = 2) atoms with antiparallel oriented spins, leading to an overall spin moment of S = 10. In the hysteresis loops nine different jumps at regularly spaced fields are identified in the investigated temperature range (1.5 < T < 3 K). At these fields the relaxation of moment due to thermal activation is superimposed by strong quantum tunnelling. In lowering the temperature the time dependence changes from thermally activated to thermally assisted tunnelling. (author)

  6. Monitoring pilot projects on bored tunnelling : The Second Heinenoord Tunnel and the Botlek Rail Tunnel

    NARCIS (Netherlands)

    Bakker, K.J.; De Boer, F.; Admiraal, J.B.M.; Van Jaarsveld, E.P.

    1999-01-01

    Two pilot projects for bored tunnelling in soft soil have been undertaken in the Netherlands. The monitoring was commissioned under the authority of the Centre for Underground Construction (COB). A description of the research related to the Second Heinenoord Tunnel and the Botlek Rail Tunnel will be

  7. Tunneling features in semiconductor nanostructures

    Science.gov (United States)

    Arseev, P. I.; Mantsevich, V. N.; Maslova, N. S.; Panov, V. I.

    2017-11-01

    The most telling scanning tunneling microscopy/spectroscopy (STM/STS) data available on the influence of nonequilibrium tunneling effects and electronic spectra reconstruction are reviewed and theoretically explained by self-consistently accounting for nonequilibrium electron distribution and the change (due to the tunneling current) in the electron density of states near the tunneling junction. The paper discusses the basic ideas of the self-consistent tunneling theory, which forms the basis for experimental research and which allows many effects observed in STM/STS experiments to be explained and new phenomena to be predicted.

  8. Measuring fire size in tunnels

    International Nuclear Information System (INIS)

    Guo, Xiaoping; Zhang, Qihui

    2013-01-01

    A new measure of fire size Q′ has been introduced in longitudinally ventilated tunnel as the ratio of flame height to the height of tunnel. The analysis in this article has shown that Q′ controls both the critical velocity and the maximum ceiling temperature in the tunnel. Before the fire flame reaches tunnel ceiling (Q′ 1.0), Fr approaches a constant value. This is also a well-known phenomenon in large tunnel fires. Tunnel ceiling temperature shows the opposite trend. Before the fire flame reaches the ceiling, it increases very slowly with the fire size. Once the flame has hit the ceiling of tunnel, temperature rises rapidly with Q′. The good agreement between the current prediction and three different sets of experimental data has demonstrated that the theory has correctly modelled the relation among the heat release rate of fire, ventilation flow and the height of tunnel. From design point of view, the theoretical maximum of critical velocity for a given tunnel can help to prevent oversized ventilation system. -- Highlights: • Fire sizing is an important safety measure in tunnel design. • New measure of fire size a function of HRR of fire, tunnel height and ventilation. • The measure can identify large and small fires. • The characteristics of different fire are consistent with observation in real fires

  9. Coherence in Magnetic Quantum Tunneling

    Science.gov (United States)

    Fernandez, Julio F.

    2001-03-01

    Crystals of single molecule magnets such as Mn_12 and Fe8 behave at low temperatures as a collection of independent spins. Magnetic anisotropy barriers slow down spin-flip processes. Their rate Γ becomes temperature independent at sufficiently low temperature. Quantum tunneling (QT) accounts for this behavior. Currently, spin QT in Mn_12 and Fe8 is assumed to proceed as an incoherent sum of small probability increments that occur whenever a bias field h(t) (arising from hyperfine interactions with nuclear spins) that varies with time t becomes sufficiently small, as in Landau-Zener transitions. Within a two-state model, we study the behavior of a suitably defined coherence time τ_φ and compare it with the correlation time τh for h(t). It turns out that τ_φ >τ_h, when τ_hδ h < hbar, where δ h is the rms deviation of h. We show what effect such coherence has on Γ. Its dependence on a static longitudinal applied field Hz is drastically affected. There is however no effect if the field is swept through resonance.

  10. The orientation distribution of tunneling-related quantities

    Science.gov (United States)

    Seif, W. M.; Refaie, A. I.; Botros, M. M.

    2018-03-01

    In the nuclear tunneling processes involving deformed nuclei, most of the tunneling-related quantities depend on the relative orientations of the participating nuclei. In the presence of different multipole deformations, we study the variation of a few relevant quantities for the α-decay and the sub-barrier fusion processes, in an orientation degree of freedom. The knocking frequency and the penetration probability are evaluated within the Wentzel-Kramers-Brillouin approximation. The interaction potential is calculated with Skyrme-type nucleon-nucleon interaction. We found that the width of the potential pocket, the Coulomb barrier radius, the penetration probability, the α-decay width, and the fusion cross-section follow consistently the orientation-angle variation of the radius of the deformed nucleus. The orientation distribution patterns of the pocket width, the barrier radius, the logarithms of the penetrability, the decay width, and the fusion cross-section are found to be highly analogous to pattern of the deformed-nucleus radius. The curve patterns of the orientation angle distributions of the internal pocket depth, the Coulomb barrier height and width, as well as the knocking frequency simulate inversely the variation of the deformed nucleus radius. The predicted orientation behaviors will be of a special interest in predicting the optimum orientations for the tunneling processes.

  11. Outcome of Radiologically Placed Tunneled Haemodialysis Catheters

    International Nuclear Information System (INIS)

    Sayani, R.; Anwar, M.; Haq, T.U.; Qamari, N.A.; Bilal, M.A.

    2013-01-01

    Objective: To study the outcome of radiologically placed double lumen tunneled haemodialysis catheters for the management of renal failure. Study Design: Case series. Place and Duration of Study: Interventional Suite of Radiology Department at the Aga Khan University Hospital, Karachi, from April 2010 to June 2011. Methodology: All consecutive patients who were referred to the department of radiology by the nephrologists for double lumen tunneled haemodialysis catheter (Permacath) placement during the study period were included. Patients with septicemia, those for whom follow-up was not available, those coming for catheter exchange or who died due to a noncatheter related condition were excluded. A radio-opaque, soft silicone double lumen catheter was inserted through a subcutaneous tunnel created over the anterior chest wall. The catheter tip was placed in the right atrium via the internal jugular vein. Ultrasound guidance was used for initial venous puncture. The rest of the procedure was carried out under fluoroscopic guidance. Technical success, catheter related bacteremia rates, adequacy of dialysis, patency, and adverse events were analyzed. Results: Overall 88 tunneled haemodialysis catheters were placed in 87 patients. Patients were followed-up for duration of 1 - 307 days with mean follow-up period of 4 months. Immediate technical success was 100%. The procedural complication rate was 5.6% (5 catheters). Eight patients died during the study period, seven from causes unrelated to the procedure. One patient died due to septicemia secondary to catheter related infection. Of the remaining 69 patients, 50 (72.4%) predominantly had uneventful course during the study period. Twelve patients developed infection (17.3%); two were successfully treated conservatively while in 10 patients catheter had to be removed. Seven catheters (10.1%) failed due to mechanical problems. In 3 patients the internal jugular veins got partially thrombosed. One catheter was

  12. Silicone chain extender

    DEFF Research Database (Denmark)

    2015-01-01

    The present invention relates to a silicone chain extender, more particularly a chain extender for silicone polymers and copolymers, to a chain extended silicone polymer or copolymer and to a functionalized chain extended silicone polymer or copolymer, to a method for the preparation thereof...

  13. The silicon-silicon oxide multilayers utilization as intrinsic layer on pin solar cells

    International Nuclear Information System (INIS)

    Colder, H.; Marie, P.; Gourbilleau, F.

    2008-01-01

    Silicon nanostructures are promising candidate for the intrinsic layer on pin solar cells. In this work we report on new material: silicon-rich silicon oxide (SRSO) deposited by reactive magnetron sputtering of a pure silica target and an interesting structure: multilayers consisting of a stack of SRSO and pure silicon oxide layers. Two thicknesses of the SRSO sublayer, t SRSO , are studied 3 nm and 5 nm whereas the thickness of silica sublayer is maintaining at 3 nm. The presence of nanocrystallites of silicon, evidenced by X-Ray diffraction (XRD), leads to photoluminescence (PL) emission at room temperature due to the quantum confinement of the carriers. The PL peak shifts from 1.3 eV to 1.5 eV is correlated to the decreasing of t SRSO from 5 nm down to 3 nm. In the purpose of their potential utilization for i-layer, the optical properties are studied by absorption spectroscopy. The achievement a such structures at promising absorption properties. Moreover by favouring the carriers injection by the tunnel effect between silicon nanograins and silica sublayers, the multilayers seem to be interesting for solar cells

  14. Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors

    KAUST Repository

    Montes Muñoz, Enrique

    2017-01-24

    We investigate the electronic transport properties of silicon nanotubes attached to metallic electrodes from first principles, using density functional theory and the non-equilibrium Green\\'s function method. The influence of the surface termination is studied as well as the dependence of the transport characteristics on the chirality, diameter, and length. Strong electronic coupling between nanotubes and electrodes is found to be a general feature that results in low contact resistance. The conductance in the tunneling regime is discussed in terms of the complex band structure. Silicon nanotube field effect transistors are simulated by applying a uniform potential gate. Our results demonstrate very high values of transconductance, outperforming the best commercial silicon field effect transistors, combined with low values of sub-threshold swing.

  15. Silicon plasmonics at midinfrared using silicon-insulator-silicon platform

    Science.gov (United States)

    Gamal, Rania; Shafaay, Sarah; Ismail, Yehea; Swillam, Mohamed A.

    2017-01-01

    We propose devices based on doped silicon. Doped silicon is designed to act as a plasmonic medium in the midinfrared (MIR) range. The surface plasmon frequency of the doped silicon can be tuned within the MIR range, which gives rise to useful properties in the material's dispersion. We propose various plasmonic configurations that can be utilized for silicon on-chip applications in MIR. These devices have superior performance over conventional silicon devices and provide unique functionalities such as 90-sharp degree bends, T- and X-junction splitters, and stubs. These devices are CMOS-compatible and can be easily integrated with other electronic devices. In addition, the potential for biological and environmental sensing using doped silicon nanowires is demonstrated.

  16. Giant thermal spin-torque-assisted magnetic tunnel junction switching.

    Science.gov (United States)

    Pushp, Aakash; Phung, Timothy; Rettner, Charles; Hughes, Brian P; Yang, See-Hun; Parkin, Stuart S P

    2015-05-26

    Spin-polarized charge currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin currents from temperature gradients, and their associated thermal-spin torques (TSTs), have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe.

  17. Single-charge tunneling in ambipolar silicon quantum dots

    NARCIS (Netherlands)

    Müller, Filipp

    2015-01-01

    Spin qubits in coupled quantum dots (QDs) are promising for future quantum information processing (QIP). A quantum bit (qubit) is the quantum mechanical analogon of a classical bit. In general, each quantum mechanical two-level system can represent a qubit. For the spin of a single charge carrier

  18. In-plane tunnelling field-effecttransistor integrated on Silicon

    Czech Academy of Sciences Publication Activity Database

    Fina, I.; Apachitei, G.; Preziosi, D.; Deniz, H.; Kriegner, D.; Martí, Xavier; Alexe, M.

    2015-01-01

    Roč. 5, Sep (2015), s. 14367 ISSN 2045-2322 Institutional support: RVO:68378271 Keywords : electronic devices * ferroelectrics and multiferroics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 5.228, year: 2015

  19. Hawking Radiation As Tunneling

    International Nuclear Information System (INIS)

    Parikh, Maulik K.; Wilczek, Frank

    2000-01-01

    We present a short and direct derivation of Hawking radiation as a tunneling process, based on particles in a dynamical geometry. The imaginary part of the action for the classically forbidden process is related to the Boltzmann factor for emission at the Hawking temperature. Because the derivation respects conservation laws, the exact spectrum is not precisely thermal. We compare and contrast the problem of spontaneous emission of charged particles from a charged conductor

  20. The beam dump tunnels

    CERN Multimedia

    Patrice Loïez

    2002-01-01

    In these images workers are digging the tunnels that will be used to dump the counter-circulating beams. Travelling just a fraction under the speed of light, the beams at the LHC will each carry the energy of an aircraft carrier travelling at 12 knots. In order to dispose of these beams safely, a beam dump is used to extract the beam and diffuse it before it collides with a radiation shielded graphite target.

  1. Carpal tunnel release

    DEFF Research Database (Denmark)

    Larsen, Morten Bo; Sørensen, A I; Crone, K L

    2013-01-01

    A single-blind, randomized, controlled trial was done to compare the results of carpal tunnel release using classic incision, short incision, or endoscopic technique. In total, 90 consecutive cases were included. Follow-up was 24 weeks. We found a significantly shorter sick leave in the endoscopi...... incision could be found. There were no serious complications in either group. The results indicate that the endoscopic procedure is safe and has the benefit of faster rehabilitation and return to work....

  2. Tunnel blasting - recent developments

    Energy Technology Data Exchange (ETDEWEB)

    White, T.E.

    1999-05-01

    While tunnelling machines are more efficient than previously, there are still areas where blasting is a more efficient method of advance. Drilling and design methods are increasingly sophisticated, as is choice of explosive. Explosive deployment must be carefully calculated so as to avoid desensitisation. Nitroglycerine may be used as slurries; bulk mixing on site of ANFO is also practised in mining in the UK. Electric detonators, Nonel tubes, and electronic detonators are also increasingly employed.

  3. Resonant Tunneling Spin Pump

    Science.gov (United States)

    Ting, David Z.

    2007-01-01

    The resonant tunneling spin pump is a proposed semiconductor device that would generate spin-polarized electron currents. The resonant tunneling spin pump would be a purely electrical device in the sense that it would not contain any magnetic material and would not rely on an applied magnetic field. Also, unlike prior sources of spin-polarized electron currents, the proposed device would not depend on a source of circularly polarized light. The proposed semiconductor electron-spin filters would exploit the Rashba effect, which can induce energy splitting in what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. Theoretical studies have suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling.

  4. Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions

    Directory of Open Access Journals (Sweden)

    Fen Liu

    2016-08-01

    Full Text Available Resonant tunneling can lead to inverse tunnel magnetoresistance when impurity levels rather than direct tunneling dominate the transport process. We fabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with an epitaxial LiF energy barrier joined with a polycrystalline EuS spin-filter barrier. Due to the water solubility of LiF, the devices were fully packaged in situ. The devices showed sizeable positive TMR up to 16% at low bias voltages but clearly inverted TMR at higher bias voltages. The TMR inversion depends sensitively on the thickness of LiF, and the tendency of inversion disappears when LiF gets thick enough and recovers its intrinsic properties.

  5. Observation of spin Hall effect in photon tunneling via weak measurements.

    Science.gov (United States)

    Zhou, Xinxing; Ling, Xiaohui; Zhang, Zhiyou; Luo, Hailu; Wen, Shuangchun

    2014-12-09

    Photonic spin Hall effect (SHE) manifesting itself as spin-dependent splitting escapes detection in previous photon tunneling experiments due to the fact that the induced beam centroid shift is restricted to a fraction of wavelength. In this work, we report on the first observation of this tiny effect in photon tunneling via weak measurements based on preselection and postselection technique on the spin states. We find that the spin-dependent splitting is even larger than the potential barrier thickness when spin-polarized photons tunneling through a potential barrier. This photonic SHE is attributed to spin-redirection Berry phase which can be described as a consequence of the spin-orbit coupling. These findings provide new insight into photon tunneling effect and thereby offer the possibility of developing spin-based nanophotonic applications.

  6. Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

    KAUST Repository

    Manchon, Aurelien

    2011-10-01

    Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

  7. Lithium diffusion in silicon and induced structure disorder: A molecular dynamics study

    Directory of Open Access Journals (Sweden)

    Huanyu Wang

    2013-11-01

    Full Text Available Using molecular dynamics method, we investigate the diffusion property of lithium in different silicon structures and silicon structure's disorder extent during lithium's diffusion process. We find that the pathway and the incident angle between the direction of barrier and diffusion of lithium are also the essential factors to the lithium's diffusion property in silicon anode besides the barrier. Smaller incident angle could decrease the scattering of lithium in silicon structure effectively. Moreover, lithium diffuses easier in the Li-Si alloy structure of higher lithium concentration with deeper injection depth. The silicon's structure will be damaged gradually during the charge and discharge process. However, it will also recover to initial state to a great extent after relaxation. Therefore, the damage of lithium diffusion to silicon anode in the structure of low lithium concentration is reversible to a great degree. In addition, the silicon structure of crystal orientation perform better properties in both lithium's diffusivity and structural stability.

  8. 1366 Project Silicon: Reclaiming US Silicon PV Leadership

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

    2016-02-16

    1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

  9. Controlling the spin-torque efficiency with ferroelectric barriers

    KAUST Repository

    Useinov, A.

    2015-02-11

    Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.

  10. Resonant tunnelling and negative differential conductance in graphene transistors

    Science.gov (United States)

    Britnell, L.; Gorbachev, R. V.; Geim, A. K.; Ponomarenko, L. A.; Mishchenko, A.; Greenaway, M. T.; Fromhold, T. M.; Novoselov, K. S.; Eaves, L.

    2013-04-01

    The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonance occurs when the electronic spectra of the two electrodes are aligned. The resulting negative differential conductance in the device characteristics persists up to room temperature and is gate voltage-tuneable due to graphene’s unique Dirac-like spectrum. Although conventional resonant tunnelling devices comprising a quantum well sandwiched between two tunnel barriers are tens of nanometres thick, the tunnelling carriers in our devices cross only a few atomic layers, offering the prospect of ultra-fast transit times. This feature, combined with the multi-valued form of the device characteristics, has potential for applications in high-frequency and logic devices.

  11. Influence of edge roughness on graphene nanoribbon resonant tunnelling diodes

    International Nuclear Information System (INIS)

    Liang Gengchiau; Khalid, Sharjeel Bin; Lam, Kai-Tak

    2010-01-01

    The edge roughness effects of graphene nanoribbons on their application in resonant tunnelling diodes with different geometrical shapes (S, H and W) were investigated. Sixty samples for each 5%, 10% and 15% edge roughness conditions of these differently shaped graphene nanoribbon resonant tunnelling diodes were randomly generated and studied. Firstly, it was observed that edge roughness in the barrier regions decreases the effective barrier height and thickness, which increases the broadening of the quantized states in the quantum well due to the enhanced penetration of the wave-function tail from the electrodes. Secondly, edge roughness increases the effective width of the quantum well and causes the lowering of the quantized states. Furthermore, the shape effects on carrier transport are modified by edge roughness due to different interfacial scattering. Finally, with the effects mentioned above, edge roughness has a considerable impact on the device performance in terms of varying the peak-current positions and degrading the peak-to-valley current ratio.

  12. Tunneling magnetoresistance in ferromagnetic planar hetero-nanojunctions

    KAUST Repository

    Useinov, Arthur

    2010-05-03

    We present a theoretical study of the tunneling magnetoresistance (TMR) in nanojunctions between non-identical ferromagnetic metals in the framework of the quasiclassical approach. The lateral size of a dielectric oxide layer, which is considered as a tunneling barrier between the metallic electrodes, is comparable with the mean-free path of electrons. The dependence of the TMR on the bias voltage, physical parameters of the dielectric barrier, and spin polarization of the electrodes is studied. It is demonstrated that a simple enough theory can give high TMR magnitudes of several hundred percent at bias voltages below 0.5 V. A qualitative comparison with the available experimental data is given. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Spin-filtering junctions with double ferroelectric barriers

    International Nuclear Information System (INIS)

    Yan, Ju; Ding-Yu, Xing

    2009-01-01

    An FS/FE/NS/FE/FS double tunnel junction is suggested to have the ability to inject, modulate and detect the spin-polarized current electrically in a single device, where FS is the ferromagnetic semiconductor electrode, NS is the nonmagnetic semiconductor, and FE the ferroelectric barrier. The spin polarization of the current injected into the NS region can be switched between a highly spin-polarized state and a spin unpolarized state. The high spin polarization may be detected by measuring the tunneling magnetoresistance ratio of the double tunnel junction

  14. Silicon metal-semiconductor-metal photodetector

    Science.gov (United States)

    Brueck, Steven R. J.; Myers, David R.; Sharma, Ashwani K.

    1995-01-01

    Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

  15. Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures

    International Nuclear Information System (INIS)

    Chakraborty, Gargi; Sarkar, C K; Lu, X B; Dai, J Y

    2008-01-01

    The tunnelling currents through the gate dielectric partly embedded with semiconducting single-wall carbon nanotubes in a silicon metal-oxide-semiconductor (MOS) structure have been investigated. The application of the gate voltage to such an MOS device results in the band bending at the interface of the partly embedded oxide dielectric and the surface of the silicon, initiating tunnelling through the gate oxide responsible for the gate leakage current whenever the thickness of the oxide is scaled. A model for silicon MOS structures, where carbon nanotubes are confined in a narrow layer embedded in the gate dielectric, is proposed to investigate the direct and the Fowler-Nordheim (FN) tunnelling currents of such systems. The idea of embedding such elements in the gate oxide is to assess the possibility for charge storage for memory device applications. Comparing the FN tunnelling onset voltage between the pure gate oxide and the gate oxide embedded with carbon nanotubes, it is found that the onset voltage decreases with the introduction of the nanotubes. The direct tunnelling current has also been studied at very low gate bias, for the thin oxide MOS structure which plays an important role in scaling down the MOS transistors. The FN tunnelling current has also been studied with varying nanotube diameter

  16. Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures.

    Science.gov (United States)

    Chakraborty, Gargi; Sarkar, C K; Lu, X B; Dai, J Y

    2008-06-25

    The tunnelling currents through the gate dielectric partly embedded with semiconducting single-wall carbon nanotubes in a silicon metal-oxide-semiconductor (MOS) structure have been investigated. The application of the gate voltage to such an MOS device results in the band bending at the interface of the partly embedded oxide dielectric and the surface of the silicon, initiating tunnelling through the gate oxide responsible for the gate leakage current whenever the thickness of the oxide is scaled. A model for silicon MOS structures, where carbon nanotubes are confined in a narrow layer embedded in the gate dielectric, is proposed to investigate the direct and the Fowler-Nordheim (FN) tunnelling currents of such systems. The idea of embedding such elements in the gate oxide is to assess the possibility for charge storage for memory device applications. Comparing the FN tunnelling onset voltage between the pure gate oxide and the gate oxide embedded with carbon nanotubes, it is found that the onset voltage decreases with the introduction of the nanotubes. The direct tunnelling current has also been studied at very low gate bias, for the thin oxide MOS structure which plays an important role in scaling down the MOS transistors. The FN tunnelling current has also been studied with varying nanotube diameter.

  17. Ferroelectric-Driven Performance Enhancement of Graphene Field-Effect Transistors Based on Vertical Tunneling Heterostructures.

    Science.gov (United States)

    Yuan, Shuoguo; Yang, Zhibin; Xie, Chao; Yan, Feng; Dai, Jiyan; Lau, Shu Ping; Chan, Helen L W; Hao, Jianhua

    2016-12-01

    A vertical graphene heterostructure field-effect transistor (VGHFET) using an ultrathin ferroelectric film as a tunnel barrier is developed. The heterostructure is capable of providing new degrees of tunability and functionality via coupling between the ferroelectricity and the tunnel current of the VGHFET, which results in a high-performance device. The results pave the way for developing novel atomic-scale 2D heterostructures and devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. A Study of Vertical Transport through Graphene toward Control of Quantum Tunneling.

    Science.gov (United States)

    Zhu, Xiaodan; Lei, Sidong; Tsai, Shin-Hung; Zhang, Xiang; Liu, Jun; Yin, Gen; Tang, Min; Torres, Carlos M; Navabi, Aryan; Jin, Zehua; Tsai, Shiao-Po; Qasem, Hussam; Wang, Yong; Vajtai, Robert; Lake, Roger K; Ajayan, Pulickel M; Wang, Kang L

    2018-02-14

    Vertical integration of van der Waals (vdW) materials with atomic precision is an intriguing possibility brought forward by these two-dimensional (2D) materials. Essential to the design and analysis of these structures is a fundamental understanding of the vertical transport of charge carriers into and across vdW materials, yet little has been done in this area. In this report, we explore the important roles of single layer graphene in the vertical tunneling process as a tunneling barrier. Although a semimetal in the lateral lattice plane, graphene together with the vdW gap act as a tunneling barrier that is nearly transparent to the vertically tunneling electrons due to its atomic thickness and the transverse momenta mismatch between the injected electrons and the graphene band structure. This is accentuated using electron tunneling spectroscopy (ETS) showing a lack of features corresponding to the Dirac cone band structure. Meanwhile, the graphene acts as a lateral conductor through which the potential and charge distribution across the tunneling barrier can be tuned. These unique properties make graphene an excellent 2D atomic grid, transparent to charge carriers, and yet can control the carrier flux via the electrical potential. A new model on the quantum capacitance's effect on vertical tunneling is developed to further elucidate the role of graphene in modulating the tunneling process. This work may serve as a general guideline for the design and analysis of vdW vertical tunneling devices and heterostructures, as well as the study of electron/spin injection through and into vdW materials.

  19. Magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy

    Directory of Open Access Journals (Sweden)

    Keyu Ning

    2017-01-01

    Full Text Available As one invigorated filed of spin caloritronics combining with spin, charge and heat current, the magneto-Seebeck effect has been experimentally and theoretically studied in spin tunneling thin films and nanostructures. Here we analyze the tunnel magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy (p-MTJs under various measurement temperatures. The large tunnel magneto-Seebeck (TMS ratio up to −838.8% for p-MTJs at 200 K is achieved, with Seebeck coefficient S in parallel and antiparallel states of 6.7 mV/K and 62.9 mV/K, respectively. The temperature dependence of the tunnel magneto-Seebeck can be attributed to the contributing transmission function and electron states at the interface between CoFeB electrode and MgO barrier.

  20. Linking protein structure and dynamics to catalysis: the role of hydrogen tunnelling

    Science.gov (United States)

    Klinman, Judith P

    2006-01-01

    Early studies of enzyme-catalysed hydride transfer reactions indicated kinetic anomalies that were initially interpreted in the context of a ‘tunnelling correction’. An alternate model for tunnelling emerged following studies of the hydrogen atom transfer catalysed by the enzyme soybean lipoxygenase. This invokes full tunnelling of all isotopes of hydrogen, with reaction barriers reflecting the heavy atom, environmental reorganization terms. Using the latter approach, we offer an integration of the aggregate data implicating hydrogen tunnelling in enzymes (i.e. deviations from Swain–Schaad relationships and the semi-classical temperature dependence of the hydrogen isotope effect). The impact of site-specific mutations of enzymes plays a critical role in our understanding of the factors that control tunnelling in enzyme reactions. PMID:16873120

  1. Susceptibility of CoFeB/AlOx/Co Magnetic Tunnel Junctions to Low-Frequency Alternating Current

    Directory of Open Access Journals (Sweden)

    Yuan-Tsung Chen

    2013-10-01

    Full Text Available This investigation studies CoFeB/AlOx/Co magnetic tunneling junction (MTJ in the magnetic field of a low-frequency alternating current, for various thicknesses of the barrier layer AlOx. The low-frequency alternate-current magnetic susceptibility (χac and phase angle (θ of the CoFeB/AlOx/Co MTJ are determined using an cac analyzer. The driving frequency ranges from 10 to 25,000 Hz. These multilayered MTJs are deposited on a silicon substrate using a DC and RF magnetron sputtering system. Barrier layer thicknesses are 22, 26, and 30 Å. The X-ray diffraction patterns (XRD include a main peak at 2θ = 44.7° from hexagonal close-packed (HCP Co with a highly (0002 textured structure, with AlOx and CoFeB as amorphous phases. The full width at half maximum (FWHM of the Co(0002 peak, decreases as the AlOx thickness increases; revealing that the Co layer becomes more crystalline with increasing thickness. χac result demonstrates that the optimal resonance frequency (fres that maximizes the χac value is 500 Hz. As the frequency increases to 1000 Hz, the susceptibility decreases rapidly. However, when the frequency increases over 1000 Hz, the susceptibility sharply declines, and almost closes to zero. The experimental results reveal that the mean optimal susceptibility is 1.87 at an AlOx barrier layer thickness of 30 Å because the Co(0002 texture induces magneto-anisotropy, which improves the indirect CoFeB and Co spin exchange-coupling strength and the χac value. The results concerning magnetism indicate that the magnetic characteristics are related to the crystallinity of Co.

  2. Quantum dissipation, scattering and tunneling

    International Nuclear Information System (INIS)

    Eleuterio, S.M.; Vilela Mendes, R.

    1984-01-01

    A quantization technique for dissipative systems is used to discuss one dimensional problems including tunneling with dissipation, capture in dissipative potential wells and quantum coherence. (orig.)

  3. High performance resonant tunnelling structures on GaAs substrates

    Science.gov (United States)

    Riechert, H.; Bernklau, D.; Reithmaier, J.-P.; Schnell, R. D.

    1990-03-01

    GaAs-based resonant tunneling structures of high quality were grown by molecular beam epitaxy. Room temperature peak-to-valley ratios of 4.8 for a GaAs/AlGaAs double barrier quantum well, 4.1 for GaAs/AlGaAs with InGaAs quantum well and 5.9 for GaAs/AlGaAs with adjacent InGaAs 'prewell' were obtained, in connection with reasonable peak current densities.

  4. Tunneling in decay and fusion of compound nuclei

    International Nuclear Information System (INIS)

    Tarakanov, A.V.; Shilov, V.M.

    1988-01-01

    On the basis of the multichannel boundary-condition model we demonstrate the asymmetry of the total transmission of the Coulomb barrier taking into account the internal structure of the colliding nuclei. For decay the enhancement of the tunneling probability in comparison with the single-channel case is small. We prove the importance of taking into account states in which one of the decay-product fragments is in an excited state

  5. Exponential size-dependent tunability of strain on the transport behavior in ZnO tunnel junctions: an ab initio study.

    Science.gov (United States)

    Zhu, Jia; Chen, W J; Zhang, G H; Zheng, Yue

    2015-10-14

    It is an interesting issue if the transport behavior of a piezoelectric tunnel junction is sensitive to external strain or stress, and it implies a prospect for developing novel mechanical sensors, transducers, piezotronic devices, etc. Many studies paid attention to this issue, yet how the strain and stress tunable transport behavior of a tunnel junction depends on the barrier thickness is still rarely known. Using the first principles calculations, we investigate the size-dependent and strain-tunable transport behavior in the tunnel junctions. It was confirmed that external strain has strong control over the transport properties of ZnO tunnel junctions, with several times amplification of tunnel conductance obtained by strain reversal. More importantly, the conductance amplification by strain reversal exponentially changes with the barrier thickness, indicating the size-dependent strain tunability of the transport behavior. The electrostatic quantities (i.e., built-in field, depolarization field, polarization, interfacial dipoles and potential barrier) and the transport properties of tunnel junctions were comprehensively analyzed to reveal the relationships between these quantities and their size dependence. The exponential size-dependence of strain tunable transport behavior in ZnO tunnel junctions is attributed to the linear change in the potential barrier with the barrier thickness. Our simulations provide an insight of how to maximize the strain tunability of transport behavior of piezoelectric tunnel junctions by thickness design and strain engineering.

  6. Scanning Probe Microscopy for Atomic-scale Silicon Device Fabrication

    Science.gov (United States)

    Simmons, Michelle

    2005-03-01

    Over the past three decades the driving force behind the expansion of the microelectronics industry has been the ability to pack ever more features onto a silicon chip, achieved by continually miniaturising the size of the individual components. However, after 2015 there is no known technological route to reduce device sizes below 10nm. In this talk we demonstrate a complete fabrication strategy towards atomic-scale device fabrication in silicon using a combination of scanning tunneling microscopy and high purity crystal growth. In particular we overcome one of the major obstacles to making functional semiconductor devices with an STM -- connecting macroscopic leads to the device once it is removed from the vacuum environment [1]. We demonstrate key steps of the fabrication process, including the ability to place individual phosphorus atoms in silicon at precise locations [2] and encapsulate them in epitaxial silicon with minimal diffusion and segregation of the dopants [3]. We present magnetoresistance data showing the cross-over from 2D to 1D transport in nano-scale quantum wires and arrays. Finally we discuss the implications of these results for the construction of more sophisticated atomic-scale devices in silicon such as a silicon based quantum computer. [1] F.J. Ruess, L. Oberbeck, M.Y. Simmons, K.E.J. Goh, A.R. Hamilton, T. Hallam, N.J. Curson and R.G. Clark, ``Fabrication of quantum wires using scanning probe microscopy'', Nano Letters 4, 1969 (2004). [2] S. R. Schofield, N. J. Curson, M. Y. Simmons, F. J. Ruess, T. Hallam, L. Oberbeck and R. G.Clark, ``Atomically precise placement of single dopants in silicon'', Physical Review Letters 91, 136104 (2003). [3] L. Oberbeck, N. J. Curson, T. Hallam, M. Y. Simmons and R.G. Clark, ``Measurement of phosphorus segregation in silicon at the atomic-scale using scanning tunneling microscopy'', Appl. Phys. Lett. 83, 1359 (2004).

  7. Joint road safety operations in tunnels and open roads

    Science.gov (United States)

    Adesiyun, Adewole; Avenoso, Antonio; Dionelis, Kallistratos; Cela, Liljana; Nicodème, Christophe; Goger, Thierry; Polidori, Carlo

    2017-09-01

    The objective of the ECOROADS project is to overcome the barrier established by the formal interpretation of the two Directives 2008/96/EC and 2004/54/EC, which in practice do not allow the same Road Safety Audits/Inspections to be performed inside tunnels. The projects aims at the establishment of a common enhanced approach to road infrastructure and tunnel safety management by using the concepts and criteria of the Directive 2008/96/CE on road infrastructure safety management and the results of related European Commission (EC) funded projects. ECOROADS has already implemented an analysis of national practices regarding Road Safety Inspections (RSI), two Workshops with the stakeholders, and an exchange of best practices between European tunnel experts and road safety professionals, which led to the definition of common agreed safety procedures. In the second phase of the project, different groups of experts and observers applied the above common procedures by inspecting five European road sections featuring both open roads and tunnels in Belgium, Albania, Germany, Serbia and Former Yugoslav Republic of Macedonia. This paper shows the feedback of the 5 joint safety operations and how they are being used for a set of - recommendations and guidelines for the application of the RSA and RSI concepts within the tunnel safety operations.

  8. Experimental investigation of tunneling times using Bose-Einstein condensates

    International Nuclear Information System (INIS)

    Ciampini, Donatella; Arimondo, Ennio; Morsch, Oliver

    2011-01-01

    The time it takes a quantum system to complete a tunneling event (which in the case of cross-barrier tunneling can be viewed as the time spent in a classically forbidden area) is related to the time required for a state to evolve to an orthogonal state, and an observation, i.e., a quantum mechanical projection on a particular basis, is required to distinguish one state from another. We have performed time-resolved measurements of Landau-Zener tunneling of Bose-Einstein condensates in accelerated optical lattices, clearly resolving the steplike time dependence of the band populations. The use of different protocols enabled us to access the tunneling probability, in two different bases, namely, the adiabatic basis and the diabatic basis. The adiabatic basis corresponds to the eigenstates of the lattice, and the diabatic one to the free-particle momentum eigenstates. Our findings pave the way towards more quantitative studies of the tunneling time for LZ transitions, which are of current interest in the context of optimal quantum control and the quantum speed limit.

  9. Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films.

    Science.gov (United States)

    Li, D L; Ma, Q L; Wang, S G; Ward, R C C; Hesjedal, T; Zhang, X-G; Kohn, A; Amsellem, E; Yang, G; Liu, J L; Jiang, J; Wei, H X; Han, X F

    2014-12-02

    Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. Here, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δ1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. In this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices.

  10. Simultaneous Deep Tunneling and Classical Hopping for Hydrogen Diffusion on Metals

    Science.gov (United States)

    Fang, Wei; Richardson, Jeremy O.; Chen, Ji; Li, Xin-Zheng; Michaelides, Angelos

    2017-09-01

    Hydrogen diffusion on metals exhibits rich quantum behavior, which is not yet fully understood. Using simulations, we show that many hydrogen diffusion barriers can be categorized into those with parabolic tops and those with broad tops. With parabolic-top barriers, hydrogen diffusion evolves gradually from classical hopping, to shallow tunneling, to deep tunneling as the temperature (T ) decreases, and noticeable quantum effects persist at moderate T . In contrast, with broad-top barriers quantum effects become important only at low T and the classical-to-quantum transition is sharp, at which classical hopping and deep tunneling both occur. This coexistence indicates that more than one mechanism contributes to the quantum reaction rate. The conventional definition of the classical-to-quantum crossover T is invalid for the broad tops, and we give a new definition. Extending this, we propose a model to predict the transition T for broad-top diffusion, providing a general guide for theory and experiment.

  11. Quantum tunneling and the change in the signature of the spacetime metric

    International Nuclear Information System (INIS)

    Anini, Y.I.

    1992-03-01

    In this paper we present three examples where the quantum tunneling process may be viewed as a motion in the Euclidean time. That is, the tunneling object (particle/field/universe) may be viewed to move in a spacetime with Euclidean signature (++++) metric (Riemannian metric) in the classically forbidden region. However, we emphasize the fact that in all the three examples the quantity that has direct physical meaning is the tunneling probability through the classically forbidden region, i.e. through the potential barrier. (author). 6 refs, 4 figs

  12. Luminescence kinetics of porous silicon: fluctuation approach

    CERN Document Server

    Bondarev, V N

    2001-01-01

    Theoretical interpretation of the kinetics of the photoluminescence (PL), caused by the tunnel radiative recombination of the photoexcited electron and hole, localized on the crystallite/matrix interface, is given on the basis of the notions on the porous silicon structure as an incidental totality of the Si nanodimensional crystallites, submerged into the SiO sub 2 matrix. The relatively slow (by the stretched exponential type) time drop in the PL intensity is the results of averaging the intensity in each PL elementary act by the electron and hole mutual disposition and by the crystallite dimensions. The good quantitative description of the low-temperature experiments may be obtained through the proposed approach both by the PL kinetics and time evolution of the porous silicon PL spectrum

  13. PENIS ENLARGEMENT USING SILICONE SHELL IMPLANTS

    Directory of Open Access Journals (Sweden)

    R. T. Adamyan

    2016-01-01

    Full Text Available Abstract. To date, the vast majority of penis thickening techniques based on the patient's own tissue. Methods with synthetic autotransplants are often inefficient, or accompanied by a large number of complications. In the article the technique of thickening the penis using specially designed enveloped silicone implants is described. During the procedure, silicone shell implants are inserted under the Buck’s fascia in the previously prepared tunnels. This placement of implants prevents their offset. At the moment, 15 operations is made successfully. The absolute majority of the patients are satisfied with the result. The uniqueness of the presented method is ease of performance, high efficiency with minimal rehabilitation period. The technique can be recommended for plastic surgeons and urologists. 

  14. Light induced tunnel effect in CNT-Si photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Aramo, C., E-mail: aramo@na.infn.it [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Ambrosio, M. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Bonavolontà, C. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Dip. di Scienze Fisiche, Università degli Studi di Napoli “Federico II”, Via Cintia 2, 80126 Napoli (Italy); Boscardin, M. [Centro per Materiali e i Microsistemi Fondazione Bruno Kessler (FBK), Via Sommarive 18, Povo di Trento, 38123 Trento (Italy); Castrucci, P. [INFN, Sezione di Roma “Tor Vergata”, Dip. di Fisica, Università degli Studi di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, 00133 Roma (Italy); Crivellari, M. [Centro per Materiali e i Microsistemi Fondazione Bruno Kessler (FBK), Via Sommarive 18, Povo di Trento, 38123 Trento (Italy); De Crescenzi, M. [INFN, Sezione di Roma “Tor Vergata”, Dip. di Fisica, Università degli Studi di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, 00133 Roma (Italy); De Lisio, C. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Dip. di Scienze Fisiche, Università degli Studi di Napoli “Federico II”, Via Cintia 2, 80126 Napoli (Italy); Fiandrini, E. [INFN, Sezione di Perugia, Dip. di Fisica, Università degli Studi di Perugia, Piazza Università 1, 06100 Perugia (Italy); and others

    2016-07-11

    Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4 V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5 V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics.

  15. Fundamental visual problems in tunnels : sumposium on tunnel lighting.

    NARCIS (Netherlands)

    Schreuder, D.A.

    2018-01-01

    Tunnels and underpasses are likely to play a greater part in our future road network. Daytime lighting for tunnel entrances represents a considerable proportion of their total running costs and it is important that the right solution should be found. Guidance is given in CIE Publication No. 26

  16. Engineers win award for Swiss tunnel

    CERN Multimedia

    2003-01-01

    A Derby engineering consultancy has won the Tunnelling Industry Award 2003 for Excellence in Tunnel Design, offered by the British Tunnelling Society, for its work on the LHC in Geneva, Switzerland (1/2 page).

  17. Differential conductance measurements of low-resistance CoFeB/MgO/CoFeB magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Nishioka, S.; Hamada, Y.V.; Matsumoto, R.; Mizuguchi, M.; Shiraishi, M.; Fukushima, A.; Kubota, H.; Nagahama, T.; Yuasa, S.; Maehara, H.; Nagamine, Y.; Tsunekawa, K.; Djayaprawira, D.D.; Watanabe, N.; Suzuki, Y.

    2007-01-01

    We measured differential conductance spectra of magnetic tunnel junctions (MTJs) with thin MgO barrier and low-resistance area product. The spectra of MTJs with MgO barrier thicker than 1.05 nm were essentially the same except for slight decrease of contributions from low-energy excitations, such as magnons. The spectra of MTJ with 1.01 nm MgO barrier were thoroughly different from the MTJs with thicker barrier. The result reveals that an MTJ with very thin MgO barrier thickness has different conduction characteristics from those with thicker MgO barriers

  18. Study of temperature-dependent charge conduction in silicon-nanocrystal/SiO{sub 2} multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Mavilla, Narasimha Rao; Chavan, Vinayak [National Centre for Photovoltaic Research and Education (NCPRE), Powai, Mumbai 400 076 (India); Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400 076 (India); Solanki, Chetan Singh [National Centre for Photovoltaic Research and Education (NCPRE), Powai, Mumbai 400 076 (India); Department of Energy Science and Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400 076 (India); Vasi, Juzer [National Centre for Photovoltaic Research and Education (NCPRE), Powai, Mumbai 400 076 (India); Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400 076 (India)

    2016-08-01

    Silicon-nanocrystals (Si-NCs) realized by SiO{sub x} {sub <} {sub 2}/SiO{sub 2} multilayer (ML) approach have shown promise for realizing tightly-controlled dimensions, thus efficiently exploiting the size-dependent quantum effects for device applications. Unfortunately, the confining insulating barriers (SiO{sub 2} sublayers), instrumental for realizing quantum size effects in Si-NC MLs, can also hinder the charge conduction which is crucial for device applications including Si-NC based tandem solar cells and multi-exciton solar cells. Owing to this, a comprehensive study of conduction mechanisms has been carried out using a thorough analysis of temperature-dependent dark I-V measurements of SiO{sub 2} thin film and Si-NC multilayer samples fabricated by Inductively Coupled Plasma CVD (ICPCVD). As the ML samples consisted of interleaved SiO{sub 2} sublayers, current in SiO{sub 2} thin film has initially been studied to understand the conduction properties of bulk ICPCVD SiO{sub 2}. For 21 nm thick SiO{sub 2} film, conduction is observed to be dominated by Fowler–Nordheim (FN) tunneling for higher electric fields (> 8 MV/cm; independent of temperature), while for lower electric fields (5–8 MV/cm) at higher temperatures, the trap-related Generalized Poole–Frenkel (GPF) is dominant. This signified the role of traps in modifying the conduction in bulk ICPCVD SiO{sub 2} films. We then present the conduction in ML samples. For multilayer samples with SiO{sub 2} sublayer thickness of 1.5 nm and 2.5 nm, Direct Tunneling (DT) is observed to be dominant, while for SiO{sub 2} sublayer thickness of 3.5 nm, Space Charge Limited Conduction (SCLC) with exponential trap distribution is found to be the dominant conduction mechanism. This signifies the role of traps in modifying the conduction in Si-NC multilayer samples and SiO{sub 2} sublayer thickness dependence. - Highlights: • Electrical conduction in SiO{sub 2} film & Si-nanocrystal layers (Si-NCs) is reported. • Si

  19. Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions.

    Science.gov (United States)

    Elliot, Alan J; Malek, Gary A; Lu, Rongtao; Han, Siyuan; Yu, Haifeng; Zhao, Shiping; Wu, Judy Z

    2014-07-01

    Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al2O2/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ~1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al2O3 tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers.

  20. Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Elliot, Alan J., E-mail: alane@ku.edu, E-mail: jwu@ku.edu; Malek, Gary A.; Lu, Rongtao; Han, Siyuan; Wu, Judy Z., E-mail: alane@ku.edu, E-mail: jwu@ku.edu [Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045 (United States); Yu, Haifeng; Zhao, Shiping [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-07-15

    Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al{sub 2}O{sub 2}/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ∼1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al{sub 2}O{sub 3} tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers.

  1. Counter Tunnel Project

    Science.gov (United States)

    2014-03-01

    DSP-3000 fiber - optic gyro , MicroStrain 3DM-GX2 IMU, with USB and Ethernet connec- tors. Small enough to fit into all the tunnels that were explored...frame arms were sufficient for de- ployment of the RDC. Gigabit multi-mode fiber - optic communication and 48 VDC power were passed to the RDC through...with AcuAMP ACT050 current sensors. The control box monitoring all of the information, as well as the source of the 48 VDC and fiber - optic cable to

  2. Icing Research Tunnel

    Science.gov (United States)

    Chennault, Jonathan

    2004-01-01

    The Icing Research Tunnel in Building 11 at the NASA Glenn Research Center is committed to researching the effects of in flight icing on aircraft and testing ways to stop the formation of hazardous icing conditions on planes. During this summer, I worked here with Richard DelRosa, the lead engineer for this area. address one of the major concerns of aviation: icing conditions. During the war, many planes crashed (especially supply planes going over the.Himalayas) because ice built up in their wings and clogged the engines. To this day, it remains the largest ice tunnel in the world, with a test section that measures 6 feet high, 9 feet long, and 20 feet wide. It can simulate airspeeds from 50 to 300 miles per hour at temperatures as low as -50 Fahrenheit. Using these capabilities, IRT can simulate actual conditions at high altitudes. The first thing I did was creating a cross reference in Microsoft Excel. It lists commands for the DPU units that control the pressure and temperature variations in the tunnel, as well as the type of command (keyboard, multiplier, divide, etc). The cross reference also contains the algorithm for every command, and which page it is listed in on the control sheet (visual Auto-CAD graphs, which I helped to make). I actually spent most of the time on the computer using Auto-CAD. I drew a diagram of the entire icing tunnel and then drew diagrams of its various parts. Between my mentor and me, we have drawings of every part of it, from the spray bars to the thermocouples, power cabinets, input-output connectors for power systems, and layouts of various other machines. I was also responsible for drawing schematics for the Escort system (which controls the spray bars), the power system, DPUs, and other electrical systems. In my spare time, I am attempting to build and program the "toddler". Toddler is a walking robot that I have to program in PBASIC language. When complete, it should be able to walk on level terrain while avoiding obstacles in

  3. Coexistance of Giant Tunneling Electroresistance and Magnetoresistance in an All-Oxide Composite Magnetic Tunnel Junction

    KAUST Repository

    Caffrey, Nuala Mai

    2012-11-30

    We propose, by performing advanced abinitio electron transport calculations, an all-oxide composite magnetic tunnel junction, within which both large tunneling magnetoresistance (TMR) and tunneling electroresistance (TER) effects can coexist. The TMR originates from the symmetry-driven spin filtering provided by an insulating BaTiO3 barrier to the electrons injected from the SrRuO3 electrodes. Following recent theoretical suggestions, the TER effect is achieved by intercalating a thin insulating layer, here SrTiO3, at one of the SrRuO3/BaTiO3 interfaces. As the complex band structure of SrTiO3 has the same symmetry as that of BaTiO3, the inclusion of such an intercalated layer does not negatively alter the TMR and in fact increases it. Crucially, the magnitude of the TER also scales with the thickness of the SrTiO3 layer. The SrTiO3 thickness becomes then a single control parameter for both the TMR and the TER effect. This protocol offers a practical way to the fabrication of four-state memory cells. © 2012 American Physical Society.

  4. Barrier Systems

    NARCIS (Netherlands)

    Heteren, S. van

    2015-01-01

    Barrier-system dynamics are a function of antecedent topography and substrate lithology, Relative sea-level (RSL) changes, sediment availability and type, climate, vegetation type and cover, and various aero- and hydrodynamic processes during fair-weather conditions and extreme events. Global change

  5. Suppression of Magnetic Quantum Tunneling in a Chiral Single-Molecule Magnet by Ferromagnetic Interactions.

    Science.gov (United States)

    Lippert, Kai-Alexander; Mukherjee, Chandan; Broschinski, Jan-Philipp; Lippert, Yvonne; Walleck, Stephan; Stammler, Anja; Bögge, Hartmut; Schnack, Jürgen; Glaser, Thorsten

    2017-12-18

    Single-molecule magnets (SMMs) retain a magnetization without applied magnetic field for a decent time due to an energy barrier U for spin-reversal. Despite the success to increase U, the difficult to control magnetic quantum tunneling often leads to a decreased effective barrier U eff and a fast relaxation. Here, we demonstrate the influence of the exchange coupling on the tunneling probability in two heptanuclear SMMs hosting the same spin-system with the same high spin ground state S t = 21/2. A chirality-induced symmetry reduction leads to a switch of the Mn III -Mn III exchange from antiferromagnetic in the achiral SMM [Mn III 6 Cr III ] 3+ to ferromagnetic in the new chiral SMM RR [Mn III 6 Cr III ] 3+ . Multispin Hamiltonian analysis by full-matrix diagonalization demonstrates that the ferromagnetic interactions in RR [Mn III 6 Cr III ] 3+ enforce a well-defined S t = 21/2 ground state with substantially less mixing of M S substates in contrast to [Mn III 6 Cr III ] 3+ and no tunneling pathways below the top of the energy barrier. This is experimentally verified as U eff is smaller than the calculated energy barrier U in [Mn III 6 Cr III ] 3+ due to tunneling pathways, whereas U eff equals U in RR [Mn III 6 Cr III ] 3+ demonstrating the absence of quantum tunneling.

  6. On the flow of groundwater in closed tunnels. Generic hydrogeological modelling of nuclear waste repository, SFL 3-5

    International Nuclear Information System (INIS)

    Holmen, J.G.

    1997-06-01

    The purpose is to study the flow of groundwater in closed tunnels by use of mathematical models. The calculations were based on three dimensional models, presuming steady state conditions. The stochastic continuum approach was used for representation of a heterogeneous rock mass. The size of the calculated flow is given as a multiple of an unknown regional groundwater flow. The size of the flow in a tunnel has been studied, as regards: Direction of the regional groundwater flow, Tunnel length, width and conductivity; Heterogeneity of the surrounding rock mass; Flow barriers and encapsulation inside a tunnel. The study includes a model of the planned repository for nuclear waste (SFL 3-5). The flow through the tunnels is estimated for different scenarios. The stochastic continuum approach has been investigated, as regards the representation of a scale dependent heterogeneous conductivity. An analytical method is proposed for the scaling of measured conductivity values, the method is consistent with the stochastic continuum approach. Some general conclusions from the work are: The larger the amount of heterogeneity, the larger the expected flow; The effects of the heterogeneity will decrease with increased tunnel length; If the conductivity of the tunnel is smaller than a threshold value, the tunnel conductivity is the most important parameter; If the tunnel conductivity is large and the tunnel is long, the most important parameter is the direction of the regional flow; Given a heterogeneous rock mass, if the tunnel length is shorter than about 500 m, the heterogeneity will be an important parameter, for lengths shorter than about 250 m, probably the most important; The flow through an encapsulation surrounded by a flow barrier is mainly dependent on the conductivity of the barrier. 70 refs, 110 figs, 10 tabs

  7. On the flow of groundwater in closed tunnels. Generic hydrogeological modelling of nuclear waste repository, SFL 3-5

    Energy Technology Data Exchange (ETDEWEB)

    Holmen, J.G. [Uppsala Univ. (Sweden). Inst. of Earth Sciences]|[Golder Associates AB (Sweden)

    1997-06-01

    The purpose is to study the flow of groundwater in closed tunnels by use of mathematical models. The calculations were based on three dimensional models, presuming steady state conditions. The stochastic continuum approach was used for representation of a heterogeneous rock mass. The size of the calculated flow is given as a multiple of an unknown regional groundwater flow. The size of the flow in a tunnel has been studied, as regards: Direction of the regional groundwater flow, Tunnel length, width and conductivity; Heterogeneity of the surrounding rock mass; Flow barriers and encapsulation inside a tunnel. The study includes a model of the planned repository for nuclear waste (SFL 3-5). The flow through the tunnels is estimated for different scenarios. The stochastic continuum approach has been investigated, as regards the representation of a scale dependent heterogeneous conductivity. An analytical method is proposed for the scaling of measured conductivity values, the method is consistent with the stochastic continuum approach. Some general conclusions from the work are: The larger the amount of heterogeneity, the larger the expected flow; The effects of the heterogeneity will decrease with increased tunnel length; If the conductivity of the tunnel is smaller than a threshold value, the tunnel conductivity is the most important parameter; If the tunnel conductivity is large and the tunnel is long, the most important parameter is the direction of the regional flow; Given a heterogeneous rock mass, if the tunnel length is shorter than about 500 m, the heterogeneity will be an important parameter, for lengths shorter than about 250 m, probably the most important; The flow through an encapsulation surrounded by a flow barrier is mainly dependent on the conductivity of the barrier. 70 refs, 110 figs, 10 tabs.

  8. Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

    NARCIS (Netherlands)

    Nishiguchi, K.; Castellanos-Gomez, A.; Yamaguchi, H.; Fujiwara, A.; Van der Zant, H.S.J.; Steele, G.A.

    2015-01-01

    We demonstrate a tunnel diode composed of a vertical MoS2/SiO2/Si heterostructure. A MoS2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS2 layers and

  9. Are anomalously short tunnelling times measurable?

    International Nuclear Information System (INIS)

    Delgado, V.; Muga, J.G.

    1996-01-01

    Low and Mende have analyzed the conditions that would make possible an actual measurement of an anomalously short traversal time through a potential barrier concluding that such a measurement cannot be made because it is not possible to describe the tunnelling of a wave packet initially close to the barrier by the open-quote open-quote usual wave packet space time analysis close-quote close-quote. We complement this work in several ways: It is argued that the described failure of the usual formalism occurs under a set of too restrictive conditions, some of them not physically motivated, so it does not necessarily imply the impossibility of such a measurement. However, by retaining only conditions well motivated on physical grounds we have performed a systematic numerical check which shows that the conclusion by Low and Mende is indeed generally valid. It is shown that, as speculated by Low and Mende, the process is dominated by over the barrier transmission. Copyright copyright 1996 Academic Press, Inc

  10. Dopingless ferroelectric tunnel FET architecture for the improvement of performance of dopingless n-channel tunnel FETs

    Science.gov (United States)

    Lahgere, Avinash; Panchore, Meena; Singh, Jawar

    2016-08-01

    In this paper, we propose a novel tunnel field-effect transistor (TFET) based on charge plasma (CP) and negative capacitance (NC) for enhanced ON-current and steep subthreshold swing (SS). It is shown that the replacement of standard insulator for gate stack with ferroelectric (Fe) insulator yields NC and high electric field at the tunneling junction. Similarly, use of dopingless silicon nanowire with CP has a genuine advantage in process engineering. Therefore, combination of both technology boosters (CP and NC) in the proposed device enable low thermal budget, process variation immunity, and excellent electrical characteristics in contrast with its counterpart dopingless (DL) TFET (DL-TFET). An optimized device accomplishes an impressive 10× improvement in on-current, 100× reduced leakage current, 3× more transconductance (gm), and on-off current ratio of ∼1011 as compared to DL-TFET.

  11. A Model for the Behavior of Magnetic Tunnel Junctions

    Energy Technology Data Exchange (ETDEWEB)

    Baker, Bryan John [Iowa State Univ., Ames, IA (United States)

    2003-01-01

    A magnetic tunnel junction is a device that changes its electrical resistance with a change in an applied magnetic field. A typical junction consists of two magnetic electrodes separated by a nonmagnetic insulating layer. The magnetizations of the two electrodes can have two possible extreme configurations, parallel and antiparallel. The antiparallel configuration is observed to have the higher measured resistance and the parallel configuration has the lower resistance. To switch between these two configurations a magnetic field is applied to the device which is primarily used to change the orientation of the magnetization of one electrode usually called the free layer, although with sufficient high magnetic field the orientation of the magnetizations of both of the electrodes can be changed. The most commonly used models for describing and explaining the electronic behavior of tunnel junctions are the Simmons model and the Brinkman model. However, both of these models were designed for simple, spin independent tunneling. The Simmons model does not address the issue of applied magnetic fields nor does it address the form of the electronic band structure in the metallic electrodes, including the important factor of spin polarization. The Brinkman model is similar, the main difference between the two models being the shape of the tunneling barrier potential between the two electrodes. Therefore, the research conducted in this thesis has developed a new theoretical model that addresses these important issues starting from basic principles. The main features of the new model include: the development of equations for true spin dependent tunneling through the insulating barrier, the differences in the orientations of the electrode magnetizations on either side of the barrier, and the effects of the density of states function on the behavior of the junction. The present work has explored densities of states that are more realistic than the simplified free electron density

  12. Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

    OpenAIRE

    Liao, M.; Chen, S.; Huo, S.; Chen, S.; Wu, J.; Tang, M.; Kennedy, K.; Li, W.; Kumar, S.; Martin, M.; Baron, T.; Jin, C.; Ross, I.; Seeds, A.; Liu, H.

    2017-01-01

    In this paper, we report monolithically integrated IIIV\\ud quantum dot (QD) light-emitting sources on silicon substrates\\ud for silicon photonics. We describe the first practical InAs/GaAs\\ud QD lasers monolithically grown on an offcut silicon (001) substrate\\ud due to the realization of high quality III-V epilayers on silicon with\\ud low defect density, indicating that the large material dissimilarity\\ud between III-Vs and silicon is no longer a fundamental barrier\\ud limiting monolithic gro...

  13. Hawking temperature from tunnelling formalism

    OpenAIRE

    Mitra, P.

    2007-01-01

    It has recently been suggested that the attempt to understand Hawking radiation as tunnelling across black hole horizons produces a Hawking temperature double the standard value. It is explained here how one can obtain the standard value in the same tunnelling approach.

  14. Spin tunnelling in mesoscopic systems

    Indian Academy of Sciences (India)

    We study spin tunnelling in molecular magnets as an instance of a mesoscopic phenomenon, with special emphasis on the molecule Fe8. We show that the tunnel splitting between various pairs of Zeeman levels in this molecule oscillates as a function of applied magnetic field, vanishing completely at special points in the ...

  15. Carpal Tunnel Syndrome (For Kids)

    Science.gov (United States)

    ... First Aid & Safety Doctors & Hospitals Videos Recipes for Kids Kids site Sitio para niños How the Body Works ... Search English Español Carpal Tunnel Syndrome KidsHealth / For Kids / Carpal Tunnel Syndrome What's in this article? Where ...

  16. Spin-dependent electronic transport characteristics in Fe4N/BiFeO3/Fe4N perpendicular magnetic tunnel junctions

    Science.gov (United States)

    Yin, Li; Wang, Xiaocha; Mi, Wenbo

    2018-01-01

    Perpendicular magnetic tunnel junctions (MTJs) have attracted increasing attention owing to the low energy consumption and wide application prospects. Herewith, against Julliere's formula, an inverse tunnel magnetoresistance (TMR) appears in tetragonal Fe4N/BiFeO3/Fe4N perpendicular MTJs, which is attributed to the binding between the interface resonant tunneling state and central (bordered) hot spots. Especially, antiferromagnetic BiFeO3 shows an extra spin-polarized resonant state in the barrier, which provides a magnetic-barrier factor to affect the tunneling transport in MTJs. Meanwhile, due to the spin-polarized transport in Fe4N/BiFeO3/Fe4N MTJs, the sign of TMR can be tuned by the applied bias. The tunable TMR and resonant magnetic barrier effect pave the way for clarifying the tunneling transport in other junctions and spintronic devices.

  17. Anomalous Tunneling of Spin Wave in Polar State of Spin-1 BEC

    International Nuclear Information System (INIS)

    Watabe, Shohei; Ohashi, Yoji; Kato, Yusuke

    2012-01-01

    We investigate tunneling properties of collective spin-wave excitations in the polar state of a spin-1 spinor Bose-Einstein condensate. Within the mean-field theory at T = 0, we show that when the condensate is in the critical supercurrent state, the spin wave mode exhibits perfect transmission through a nonmagnetic potential barrier in the low energy limit, unless the strength of a spin-independent interaction c o equals that of a spin-dependent interaction c o Such an anomalous tunneling behavior is absent in the case of a magnetic barrier. We also clarify a scaling law of the transmission probability as a function of the mode energy.

  18. Anomalous Tunneling of Spin Wave in Polar State of Spin-1 BEC

    Science.gov (United States)

    Watabe, Shohei; Kato, Yusuke; Ohashi, Yoji

    2012-12-01

    We investigate tunneling properties of collective spin-wave excitations in the polar state of a spin-1 spinor Bose-Einstein condensate. Within the mean-field theory at T = 0, we show that when the condensate is in the critical supercurrent state, the spin wave mode exhibits perfect transmission through a nonmagnetic potential barrier in the low energy limit, unless the strength of a spin-independent interaction co equals that of a spin-dependent interaction co Such an anomalous tunneling behavior is absent in the case of a magnetic barrier. We also clarify a scaling law of the transmission probability as a function of the mode energy.

  19. High current gain silicon-based spin transistor

    CERN Document Server

    Dennis, C L; Ensell, G J; Gregg, J F; Thompson, S M

    2003-01-01

    A silicon-based spin transistor of novel operating principle has been demonstrated in which the current gain at room temperature is 1.4 (n-type) and 0.97 (p-type). This high current gain was obtained from a hybrid metal/semiconductor analogue to the bipolar junction transistor which functions by tunnel-injecting carriers from a ferromagnetic emitter into a diffusion driven silicon base and then tunnel-collecting them via a ferromagnetic collector. The switching of the magnetic state of the collector ferromagnet controls the collector efficiency and the current gain. Furthermore, the magnetocurrent, which is determined to be 98% (140%) for p-type (n-type) in -110 Oe, is attributable to the spin-polarized base diffusion current.

  20. Silicon radiation detectors: materials and applications

    International Nuclear Information System (INIS)

    Walton, J.T.; Haller, E.E.

    1982-10-01

    Silicon nuclear radiation detectors are available today in a large variety of sizes and types. This profusion has been made possible by the ever increasing quality and diameter silicon single crystals, new processing technologies and techniques, and innovative detector design. The salient characteristics of the four basic detector groups, diffused junction, ion implanted, surface barrier, and lithium drift are reviewed along with the silicon crystal requirements. Results of crystal imperfections detected by lithium ion compensation are presented. Processing technologies and techniques are described. Two recent novel position-sensitive detector designs are discussed - one in high-energy particle track reconstruction and the other in x-ray angiography. The unique experimental results obtained with these devices are presented